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Sample records for nanocrystalline zns thin

  1. Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

    SciTech Connect

    Rodríguez, C.A.; Sandoval-Paz, M.G.; Cabello, G.; Flores, M.; Fernández, H.; Carrasco, C.

    2014-12-15

    Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however, precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.

  2. Synthesis and characterization of nanostructured Mn-doped ZnS thin films and nanoparticles

    NASA Astrophysics Data System (ADS)

    Singh, S. P.; Perales-Perez, O. J.; Tomar, M. S.; Mata, O. V.

    2004-03-01

    Nanocrystalline ZnS:Mn2+ thin films and powders were prepared by chemical bath deposition (CBD) at 85 ° C for different concentration of Mn ions in bath solutions (Mn molar fraction, x = 0.0, 0.01, 0.02, 0.05, 0.1, 0.2 and 0.5). Produced nanocrystalline films and powders were characterized using X-ray diffraction (XRD), differential thermal analysis (DTA), scanning electron microscopy (SEM) and photoluminescence measurements. XRD patterns for Mn2+ doped and undoped ZnS powders showed broad peaks corresponding to ZnS exhibiting a mixture of cubic and hexagonal structures. Size of nanocrystallites was estimated to be 4 nm using Scherrer's equation. The DTA analyses evidenced the development of the oxide phase from ZnS nanocrystals at lower temperature than for bulk micron size particles. SEM observations showed the presence of nanocrystallites forming spherical aggregates of around 500 nm in diameter. Photoluminescence measurements reveal a strong emission peak at 580 nm which is characteristic emission peak of Mn2+ d-d transition confirming the actual incorporation of Mn2+ into ZnS framework.

  3. Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

    NASA Astrophysics Data System (ADS)

    Borah, J. P.; Sarma, K. C.

    2008-10-01

    ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I-V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.

  4. Phase transition in ZnS thin film phosphor

    NASA Astrophysics Data System (ADS)

    Kryshtab, T.; Khomchenko, V. S.; Andraca-Adame, J. A.; Khachatryan, V. B.; Mazin, M. O.; Rodionov, V. E.; Mukhlio, M. F.

    2005-02-01

    The effect of an original non-vacuum annealing of thin ZnS films according to the annealing conditions and type of substrate on the film's crystalline structure and surface morphology in relation with photoluminescent (PL) properties was investigated. ZnS thin films were deposited by electron-beam evaporation (EBE) on ceramic (BaTiO 3) and glass substrates heated to 150-200 °C. Three types of the targets such as ZnS, ZnS:Cu and ZnS:Cu, Al were used. The film thickness varied from 0.6 to 1 μm. As-deposited films were annealed at the atmospheric pressure in S 2-rich ambient atmosphere at 600-950 °C for 1 h. The ZnS:Cu films were Ga co-doped by annealing in the same atmosphere and temperature with additional Ga vapor. The ZnS films were doped with Cu, Cl using the thermal diffusion method by embedding the samples in ZnS:Cu, Cl powder. X-ray diffraction (XRD) technique, atomic force microscopy (AFM) and the measurements of PL parameters were used for investigation. The temperature of the ZnS phase transition from the sphalerite to wurtzite structure depends on the presence, type and ratio of additional impurities. It was revealed that Ga and Cl act not only as co-dopant to improve the luminescent properties, but also as activators of recrystallization processes. The transition of ZnS film's sphalerite lattice to wurtzite leads to the displacement of the blue emission band position towards the short-wavelength range by 10 nm.

  5. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    G, Sreeja V.; V, Sabitha P.; Anila, E. I.; R, Reshmi; John, Manu Punnan; Radhakrishnan, P.

    2014-10-01

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  6. Nonlinear optical characterization of ZnS thin film synthesized by chemical spray pyrolysis method

    SciTech Connect

    G, Sreeja V; Anila, E. I. R, Reshmi John, Manu Punnan; V, Sabitha P; Radhakrishnan, P.

    2014-10-15

    ZnS thin film was prepared by Chemical Spray Pyrolysis (CSP) method. The sample was characterized by X-ray diffraction method and Z scan technique. XRD pattern showed that ZnS thin film has hexagonal structure with an average size of about 5.6nm. The nonlinear optical properties of ZnS thin film was studied by open aperture Z-Scan technique using Q-switched Nd-Yag Laser at 532nm. The Z-scan plot showed that the investigated ZnS thin film has saturable absorption behavior. The nonlinear absorption coefficient and saturation intensity were also estimated.

  7. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  8. Microstructural characterization of textured ZnS thin films

    SciTech Connect

    Kryshtab, T. . E-mail: tkrysh@esfm.ipn.mx; Andraca-Adame, J.A.; Kryvko, A.

    2007-08-15

    During thin film growth texture formation is controlled by several kinetic parameters that determine the grain structural evolution. For highly textured thin films, i.e. only one strong peak can be obtained from X-ray diffraction pattern, it is impossible to separate the effect of grain size and residual strains based on peak broadening. We propose an original method for evaluating residual strains, eliminating their contribution in peak breadth and determining the domain size. A two-axes diffractometer with a Ge monochromator and a K {sub {alpha}}{sub 1,2} doublet was used for this study. The measurements of 2{theta} scans were carried out in the grazing geometry for the incident beam. ZnS thin films as-deposited and annealed were studied. Structural analysis was carried out using a one-axis diffractometer for a {theta}-2{theta} scan in the standard symmetric geometry. Surface morphology was explored by atomic force microscopy. The specification of the proposed method and its application in microstructural characterization are introduced.

  9. Hydrogenated nanocrystalline silicon germanium thin films

    NASA Astrophysics Data System (ADS)

    Yusoff, A. R. M.; Syahrul, M. N.; Henkel, K.

    2007-08-01

    Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction solar cell due to its higher optical absorption in the wavelength range of interest. In this paper, we present results of optical, structural investigations and electrical characterization of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil-shaped tungsten filament and with a disilane/germane/hydrogen gas mixture. The optical band gaps of a-SiGe:H and nc-SiGe:H thin-films, which are deposited with the same disilane/germane/hydrogen gas mixture ratio of 3.4:1.7:7, are about 1.58 eV and 2.1 eV, respectively. The nc-SiGe:H thin film exhibits a larger optical absorption coefficient of about 2-4 in the 600-900 nm range when compared to nc-Si:H thin film. Therefore, a thinner nc-SiGe:H layer of sim500 nm thickness may be sufficient for the narrow bandgap absorber in an a-Si based multiple-junction solar cell. We enhanced the transport properties as measured by the photoconductivity frequency mixing technique. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

  10. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  11. Post-annealing effects on ZnS thin films grown by using the CBD method

    NASA Astrophysics Data System (ADS)

    Ahn, Heejin; Um, Youngho

    2015-09-01

    Herein, the structural, morphological, and optical properties of zinc sulfide (ZnS) thin films deposited via the chemical bath deposition method are reported. These films were deposited on soda-lime glass (SLG) substrates by using ZnSO4, thiourea, and 25% ammonia at 90 °C. The effect of changing the annealing temperature from 100 °C to 300 °C on the properties of the ZnS thin films was investigated. X-ray diffraction (XRD) patterns showed that the ZnS thin film annealed at 100 °C had an amorphous structure; however, as the annealing temperature was increased, the crystalline quality of the thin film was enhanced. Moreover, transmission measurements showed that the optical transmittance was about 80% for wavelengths above 500 nm. The band gap energy (E g ) value of the film annealed at 300 °C was decreased to about 3.82 eV.

  12. Nanocrystalline silicon thin films for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Queen, Daniel; Jugdersuren, Battogtokh; Culberston, Jim; Wang, Qi; Nemeth, William; Metcalf, Tom; Liu, Xiao

    2014-03-01

    Recent advances in thermoelectric materials have come from reductions in thermal conductivity by manipulating both chemical composition and nanostructure to limit the phonon mean free path. However, wide spread applications for some of these materials may be limited due to high raw material and integration costs. In this talk we will discuss our recent results on nanocrystalline silicon thin films deposited by both hot-wire and plasma enhanced chemical vapor deposition where the nanocrystal size and crystalline volume fraction are varied by dilution of the silane precursor gas with hydrogen. Nanocyrstalline silicon is an established material technology used in multijunction amorphous silicon solar cells and has the potential to be a low cost and scalable material for use in thermoelectric devices. This work supported by the Office of Naval Research and the National Research Council.

  13. Deuterium storage in nanocrystalline magnesium thin films

    NASA Astrophysics Data System (ADS)

    Checchetto, R.; Bazzanella, N.; Miotello, A.; Brusa, R. S.; Zecca, A.; Mengucci, A.

    2004-02-01

    Nanocrystalline magnesium deuteride thin films with the β-MgD2 structure were prepared by vacuum evaporation of hexagonal magnesium (h-Mg) samples and thermal annealing in 0.15 MPa D2 atmosphere at 373 K. Thermal desorption spectroscopy analysis indicated that the rate-limiting step in the deuterium desorption was given by the thermal decomposition of the deuteride phase. The activation energy Δg of the β-MgD2→h-Mg+D2 reaction scaled from 1.13±0.03 eV in 650-nm-thick films to 1.01±0.02 eV in 75-nm-thick films most likely as consequence of different stress and defect level. Positron annihilation spectroscopy analysis of the thin-film samples submitted to deuterium absorption and desorption cycles reveal the presence of a high concentration of void-like defects in the h-Mg layers after the very first decomposition of the β-MgD2 phase, the presence of these open volume defects reduces the D2 absorption capacity of the h-Mg thin film.

  14. Influence of Deposition Time on ZnS Thin Films Performance with Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Limei; Tang, Nan; Wu, Sumei; Hu, Xiaofei; Xue, Yuzhi

    ZnS thin films had been deposited by chemical bath deposition method onto glass substrates in alkaline liquor. The reaction solution is made of ZnSO4, NH4OH and SC(NH2)2. Different deposition times (1 h, 1.5 h, 2 h, 2.5 h and 3 h) were selected to study the performance of ZnS thin films. As the results, the ZnS films' thickness were about 50-207 nm. XRD results showed an amorphous structure. Through comparing the surface morphology before and after annealing, it could be seen that annealing made some particles grow up and the surface smooth and even. The transmittance decreased with the increase of deposition time in the range of 300-800 nm. The transmittance of annealed ZnS film was lower than that of deposited one in the range of 300-800 nm. The ZnS band gap values were calculated in the range of 3.72-3.9 eV.

  15. Enhanced visible-light photoactivity of La-doped ZnS thin films

    NASA Astrophysics Data System (ADS)

    Chen, Yuan; Huang, Gui-Fang; Huang, Wei-Qing; Zou, B. S.; Pan, Anlian

    2012-09-01

    ZnS and La-doped ZnS thin films were successfully synthesized using chemical-bath deposition on conductive glass substrates. The effects of La-doping on the surface morphology, composition, structure and optical properties of the films were investigated. The photocatalytic performances of undoped and doped ZnS films were evaluated by photodegrading methyl orange aqueous solution under both ultraviolet-light and visible-light irradiation. The results show that the stoichiometry ratio and the properties of ZnS can be tailored by the La-doping concentration. An appropriate amount of La-doping effectively extends the absorption edge to visible-light region, which leads to the significant enhancement of the photocatalytic activity of ZnS thin films under visible-light irradiation. The mechanism of enhanced visible-light photoactivity by La-doping is briefly discussed. The present study provides a simple method for designing the highly efficient semiconductor photocatalysts that can effectively utilize sunlight.

  16. Detection of ZnS Phases in CZTS Thin-Films by EXAFS

    SciTech Connect

    Hartman, K.; Newman, B. K.; Johnson, J. L.; Du, H.; Fernandes, P. A.; Chawla, V.; Bolin, T.; Clemens, B. M.; Da Cunha, A. F.; Teeter, G.; Scarpulla, M. A.; Buonassisi, T.

    2011-01-01

    Copper zinc tin sulfide (CZTS) is a promising Earth-abundant thin-film solar cell material; it has an appropriate band gap of {approx}1.45 eV and a high absorption coefficient. The most efficient CZTS cells tend to be slightly Zn-rich and Cu-poor. However, growing Zn-rich CZTS films can sometimes result in phase decomposition of CZTS into ZnS and Cu{sub 2}SnS{sub 3}, which is generally deleterious to solar cell performance. Cubic ZnS is difficult to detect by XRD, due to a similar diffraction pattern. We hypothesize that synchrotron-based extended X-ray absorption fine structure (EXAFS), which is sensitive to local chemical environment, may be able to determine the quantity of ZnS phase in CZTS films by detecting differences in the second-nearest neighbor shell of the Zn atoms. Films of varying stoichiometries, from Zn-rich to Cu-rich (Zn-poor) were examined using the EXAFS technique. Differences in the spectra as a function of Cu/Zn ratio are detected. Linear combination analysis suggests increasing ZnS signal as the CZTS films become more Zn-rich. We demonstrate that the sensitive technique of EXAFS could be used to quantify the amount of ZnS present and provide a guide to crystal growth of highly phase pure films.

  17. Cathodic electrodeposition of nanocrystalline titanium dioxide thin films

    SciTech Connect

    Natarajan, C.; Nogami, G.

    1996-05-01

    A new technique for depositing nanocrystalline titanium dioxide thin films on electronically conducting glass was developed. This technique is a two-stage process: (i) cathodic electrodeposition of titanium oxyhydroxide gel film from aqueous solution containing a Ti precursor and (ii) subsequent heat-treatment of this gel film results in the formation of titanium dioxide film. The deposition potential may have a considerable effect on the formation of nanocrystalline film. The nanocrystalline titanium dioxide film shows reversible electrochromism in lithium-ion-containing organic electrolyte. The coloration and bleaching throughout the visible and near-IR range can be switched on and off within a few seconds.

  18. The influence of doping element on structural and luminescent characteristics of ZnS thin films

    NASA Astrophysics Data System (ADS)

    Kryshtab, T.; Khomchenko, V. S.; Andraca-Adame, J. A.; Rodionov, V. E.; Khachatryan, V. B.; Tzyrkunov, Yu. A.

    2006-10-01

    For the fabrication of green and blue emitting ZnS structures the elements of I, III, and VII groups (Cu, Al, Ga, Cl) are used as dopants. The influence of type of impurity, doping technique, and type of substrate on crystalline structure and surface morphology together with luminescent properties was investigated. The doping of thin films was realized during the growth process and/or post-deposition thermal treatment. ZnS thin films were deposited by physical (EBE) and chemical (MOCVD) methods onto glass or ceramic (BaTiO 3) substrates. Closed spaced evaporation and thermodiffusion methods were used for the post-deposition doping of ZnS films. X-ray diffraction (XRD) techniques, atomic force microscopy (AFM), and measurements of photoluminescent (PL) spectra were used for the investigations. It was shown that the doping by the elements of I (Cu) and III (Al, Ga) groups does not change the crystal structure during the thermal treatment up to 1000 ∘C, whereas simultaneous use of the elements of I (Cu) and VII (Cl) groups leads to decrease of the phase transition temperature to 800 ∘C. The presence of impurities in the growth process leads to a grain size increase. At post-deposition treatment Ga and Cl act as activators of recrystallization process. The transition of ZnS sphalerite lattice to wurtzite one leads to the displacement of the blue emission band position towards the short-wavelength range by 10 nm.

  19. Tuning the Properties of Nanocrystalline CdS Thin Films

    NASA Astrophysics Data System (ADS)

    Ikhmayies, Shadia J.

    2014-01-01

    Tuning the properties of nanocrystalline cadmium sulfide (CdS) thin films is very important in the technology of photonics, detectors, and computing devices. This can be achieved through the appropriate selection of the synthesis techniques, types and concentrations of the chemicals, deposition parameters, and postdeposition heat treatments. In addition, control of the properties can be achieved by controlling the size, structure type, and surface states of the nanocrystallites without altering the chemical composition of the films. A review of the experimental methods for tuning the properties of nanocrystalline CdS thin films is performed. Although control of these variables is a complicated process, high-quality nanocrystalline CdS thin films with optimum structural, morphological, and optical properties have been produced by different authors.

  20. Biomolecularly capped uniformly sized nanocrystalline materials: glutathione-capped ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Torres-Martínez, Claudia L.; Nguyen, Liem; Kho, Richard; Bae, Weon; Bozhilov, Krassimir; Klimov, Victor; Mehra, Rajesh K.

    1999-09-01

    Micro-organisms such as bacteria and yeasts form CdS to detoxify toxic cadmium ions. Frequently, CdS particles formed in yeasts and bacteria were found to be associated with specific biomolecules. It was later determined that these biomolecules were present at the surface of CdS. This coating caused a restriction in the growth of CdS particles and resulted in the formation of nanometre-sized semiconductors (NCs) that exhibited typical quantum confinement properties. Glutathione and related phytochelatin peptides were shown to be the biomolecules that capped CdS nanocrystallites synthesized by yeasts Candida glabrata and Schizosaccharomyces pombe. Although early studies showed the existence of specific biochemical pathways for the synthesis of biomolecularly capped CdS NCs, these NCs could be formed in vitro under appropriate conditions. We have recently shown that cysteine and cysteine-containing peptides such as glutathione and phytochelatins can be used in vitro to dictate the formation of discrete sizes of CdS and ZnS nanocrystals. We have evolved protocols for the synthesis of ZnS or CdS nanocrystals within a narrow size distribution range. These procedures involve three steps: (1) formation of metallo-complexes of cysteine or cysteine-containing peptides, (2) introduction of stoichiometric amounts of inorganic sulfide into the metallo-complexes to initiate the formation of nanocrystallites and finally (3) size-selective precipitation of NCs with ethanol in the presence of Na+. The resulting NCs were characterized by optical spectroscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction and electron diffraction. HRTEM showed that the diameter of the ZnS-glutathione nanocrystals was 3.45+/-0.5 nm. X-ray diffraction and electron diffraction analyses indicated ZnS-glutathione to be hexagonal. Photocatalytic studies suggest that glutathione-capped ZnS nanocrystals prepared by our procedure are highly efficient in degrading a test model

  1. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process

    SciTech Connect

    Han, Seungyeol; Lee, D. H.; Ryu, S. O.; Chang, Chih-hung

    2010-05-20

    In this article, we reported a spin successive ionic layer adsorption and reaction (SILAR) method for the first time. ZnS thin films were deposited by spin SILAR using ZnCl2 and Na2S aqueous precursor solutions at room temperature and atmosphere pressure. The optical, structural, and morphological characterizations of the films were studied by scanning electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and UV/visible spectroscopy. Smooth (average roughness <3 nm), uniform, and highly transparent ZnS (transmittance of over 90% in the visible band) thin films could be successfully deposited using this technique with shorter cycle time and much less solvent usage.

  2. Scalable production of microbially-mediated ZnS nanoparticles and application to functional thin films

    SciTech Connect

    Moon, Ji Won; Ivanov, Ilia N; Joshi, Pooran C; Armstrong, Beth L; Wang, Wei; Jung, Hyunsung; Rondinone, Adam Justin; Jellison Jr, Gerald Earle; Meyer III, Harry M; Jang, Gyoung Gug; Meisner, Roberta; Duty, Chad E; Phelps, Tommy Joe

    2014-01-01

    A series of semiconducting zinc sulfide (ZnS) nanoparticles were scalably, reproducibly, controllably, and economically synthesized with anaerobic metal-reducing Thermoanaerobacter species. They reduced partially oxidized sulfur sources to sulfides that extracellularly and thermodynamically incorporated with zinc ions to produce sparingly soluble ZnS nanoparticles with ~5 nm crystallites at yields of ~5 g l 1 month 1. A predominant sphalerite formation was facilitated by rapid precipitation kinetics, low cation/anion ratio, higher zinc concentration, water stabilization, or some combination of the four. The sphalerite ZnS nanoparticles exhibited narrow size distribution, high emission intensity, and few native defects. Scale-up and emission tunability using copper-doping were confirmed spectroscopically. Surface characterization was determined using Fourier transform infrared and X-ray photoelectron spectroscopies, which confirmed amine and carboxylic acid not only maintaining a nano-dimensional average crystallite size, but also increasing aggregation. Application of ZnS nanoparticle ink to a functional thin film was successfully tested for potential future applications.

  3. Microstructure and cathodoluminescence study of sprayed Al and Sn doped ZnS thin films

    NASA Astrophysics Data System (ADS)

    El Hichou, A.; Addou, M.; Bubendorff, J. L.; Ebothé, J.; El Idrissi, B.; Troyon, M.

    2004-02-01

    Here we report on the study of ZnS and X-doped ZnS (with 4 at% of X = Al, Sn) thin films, prepared by spray pyrolysis technique using chloride precursors. Cathodoluminescence imaging and spectroscopy, x-ray diffraction, x-ray energy dispersive spectrometry and spectrophotometry have been used for their characterization. Deposited at their optimal substrate temperature (Ts = 773 K), these films are polycrystalline and consist of mixed hexagonal (agr) and cubic (bgr) phases with a predominance of the cubic phase. Their growth is preferentially oriented along the (111)bgr direction and their optical bandgap always remains close to 3.56 eV regardless of the sample considered. The cathodoluminescence spectra of ZnS and Al-ZnS films are similar and are characterized by a blue emission peak at 407 nm (3.05 eV) and a broad blue-green one located at 524 nm (2.36 eV) due to the presence of chlorine. The insertion of Sn2+ ions in the ZnS material leads to the formation of the SnCl2 compound and to the disappearance of the blue-green emission associated with Cl ionized donors.

  4. ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

    NASA Astrophysics Data System (ADS)

    Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

    2016-04-01

    ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

  5. Effect of anionic concentration on the structural and optical properties of nanostructured ZnS thin films

    NASA Astrophysics Data System (ADS)

    Safeera, T. A.; Johns, N.; Anila, E. I.

    2016-08-01

    Nanostructured Zinc Sulfide (ZnS) thin films with wurtzite structure were prepared by chemical spray pyrolysis method at low temperature. The effect of sulfur concentration on the structural and optical properties of ZnS thin films was studied. The films were analysed by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), UV-Vis spectroscopy and photoluminescence (PL). Nano grain formation of ZnS was observed from XRD and SEM. Variation in band gap of different films is in agreement with size effects. But there is a red shift in the band gap of these films compared to bulk ZnS. This is due to band tailing effect experienced by the films due to the presence of large number of defects which was verified by PL spectrum. The overall emission was blue in colour for all the films and it was confirmed by Commission International d'Eclairage (CIE) diagram.

  6. Effects of pH on the characteristics of ZnS thin films grown by using the CBD method

    NASA Astrophysics Data System (ADS)

    Ahn, Heejin; Lee, Dongchan; Park, Sujung; Um, Youngho

    In CIGS-based thin film solar cells, a chemically deposited ZnS buffer layer with high resistivity is generally used between the absorber layer and transparent conducting oxide layer. In this work, we report a chemical process to prepare ZnS films by the CBD technique based on the typical bath deposition. The influences of ammonia (NH4OH) and Na2EDTA (Na2C10H16N2O8) as complexing agents on structural, morphological, and optical properties of ZnS thin films are investigated ranging pH concentration from 5 to 10. To investigate effects of pH on the characteristics of ZnS thin films, by using UV-visible transmittance, atomic force microscopy, and optical absorption were investigated. With changing the pH range, the ZnS thin films demonstrate high transmittance of 75~80% in the visible region, indicating the films are potentially useful in photovoltaic applications. The results will be presented in detail. This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education (2011-0024709).

  7. Thermal Conductivity in Nanocrystalline Ceria Thin Films

    SciTech Connect

    Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

    2014-02-01

    The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

  8. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    PubMed

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  9. Optical switch based on nanocrystalline VOx thin film

    NASA Astrophysics Data System (ADS)

    Chen, Xiqu; Dai, Jun

    2009-11-01

    An optical switch is fabricated based on nanocrystalline vanadium oxide (VOx) thin film using micromachining technology. An "on" state with semiconducting phase to an "off" state with metallic phase is controlled by applying a DC power to Aurum electrodes of the optical switch. The optical switching performance for the fabricated device is investigated at optical communication wavelength of 1.55μm. The heater power requires to achieve switching action is about 15mW. The testing results show that the extinction ratio and switching response time are 14dB and 2ms, respectively.

  10. Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

    PubMed

    Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

    2015-01-01

    In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV. PMID:26011683

  11. Morphological, luminescence and structural properties of nanocrystalline silicon thin films

    SciTech Connect

    Ali, Atif Mossad; Kobayashi, Hikaru; Inokuma, Takao; Al-Hajry, Ali

    2013-03-15

    Highlights: ► The PL spectra showed two stronger peaks and one weaker peak. ► The PL peak energies and optical band-gap values were found higher than 1.12 eV. ► The structural change from an amorphous to nanocrystalline with increasing [SiH{sub 4}]. - Abstract: Nanocrystalline silicon (nc-Si) thin films deposited by plasma-enhanced chemical vapor deposition at various silane flow rates ([SiH{sub 4}]) are studied. The characterization of these films by high-resolution transmission electron microscopy, Raman spectroscopy and X-ray diffraction reveals that no film and very thin film is deposited at [SiH{sub 4}] = 0.0 and 0.1 sccm, respectively. In addition, the structural change from an amorphous to a nanocrystalline phase occurs at around [SiH{sub 4}] = 0.2 sccm. In this study, the importance of arriving species at surfaces and precursors is clearly demonstrated by the effect of a small addition of SiH{sub 4} on the frequency and width of a Raman peak and the structure of the grown film. The infrared spectroscopic analysis shows no hydrogen incorporation in the nc-Si film deposited at the low value of [SiH{sub 4}]. However, the intensity of the peak around 2100 cm{sup −1} due to SiH decreases with increasing [SiH{sub 4}]. All fabricated films give photoluminescence in the range between 1.7 and 2.4 eV at room temperature, indicating enlargement of the band-gap energy. The presence of very small crystallites leads to the appearance of quantum confinement effects. The variations of the photoluminescence energy and spectral width are well correlated with the structural properties of the films such as crystallite size, crystalline volume fraction, and the density of Si-H bonds.

  12. Structural, Optical, and Magnetic Properties of Solution-Processed Co-Doped ZnS Thin Films

    NASA Astrophysics Data System (ADS)

    Goktas, A.; Mutlu, İ. H.

    2016-07-01

    Co-doped ZnS thin films have been grown on glass substrates using solution-processing and dip-coating techniques, and the impact of the Co doping level (0% to 5%) and film thickness on certain characteristics examined. X-ray diffraction study revealed that all the films possessed hexagonal crystal structure. Energy-dispersive x-ray analysis confirmed presence of Zn, Co, and S in the samples. Scanning electron microscopy showed that the film surface was homogeneous and dense with some cracks and spots. X-ray photoelectron spectroscopy confirmed introduction and integration of Co2+ ions into the ZnS thin films. Compared with undoped ZnS, optical studies indicated a reduction in optical bandgap energy (E g) while the refractive index (n), extinction coefficient (k), and dielectric constants (ɛ 1, ɛ 2) increased with film thickness (t) and Co doping level (except for 5%). Photoluminescence spectra showed enhanced luminescence intensity as the Co concentration was increased, while the dependence on t showed an initial increase followed by a decrease. The origin of the observed low-temperature (5 K and 100 K) ferromagnetic order may be related to point defects such as zinc vacancies, zinc interstitials, and sulfide vacancies or to the grain-boundary effect.

  13. Growth of MPS-capped ZnS quantum dots in self-assembled thin films: Influence of heat treatment

    NASA Astrophysics Data System (ADS)

    Koç, Kenan; Tepehan, Fatma Zehra; Tepehan, Galip Gültekin

    2015-12-01

    The colloidal ZnS quantum dots (QDs) were prepared using 3-mercaptopropyltrimethoxysilane (MPS) molecules. Sol-gel spin coating method was used to deposit the colloidal nanoparticles on a glass substrate. Several features of the MPS were made use to produce self assembled thin films of ZnS quantum dots in a SiO2 network. Produced films were heat treated in between 225 °C and 325 °C to investigate their growth kinetics. The result showed that their size changed approximately from 3 nm to 4 nm and the first excitation peak position changed from 4.6 eV to 4.1 eV in this temperature interval. The activation energy of the nanoparticles for the Ostwald ripening process was found to be 59 kJ/mol.

  14. Investigation of primary crystallite sizes in nanocrystalline ZnS powders: comparison of microwave assisted with conventional synthesis routes.

    PubMed

    Rath, Thomas; Kunert, Birgit; Resel, Roland; Fritz-Popovski, Gerhard; Saf, Robert; Trimmel, Gregor

    2008-04-21

    ZnS powders with primary crystallite sizes of only a few nanometers were prepared by three different synthesis routes at temperatures below 130 degrees C. The reaction of zinc acetate dihydrate with thioacetamide (TAA) in the presence of pyridine and triphenylphosphite (TPP) was carried out using either conventional heating or microwave heating. The obtained powders exhibit sphalerite structure as determined by X-ray diffraction (XRD). The primary crystallites have diameters between 1 and 7 nm obtained by XRD. Small angle X-ray scattering (SAXS) measurements were analyzed by the model-free inverse Fourier-transformation approach, as well as by a hard sphere-model from which particle size and polydispersity were extracted. The particle sizes by SAXS are in good agreement with the primary crystallite sizes obtained by XRD. It has been found that an increasing amount of sulfur and/or using microwave heating increases crystallite sizes. The presence of TPP decreases the particle sizes but no significant influence on the TPP concentration was observed. In the alternative third preparation route, hexamethyldisilathiane (HMDST) was used as precipitation reagent at ambient temperature, which leads to the smallest crystallite sizes of only 1 nm together with low polydispersities. Scanning electron microscopy, dynamic light scattering and UV-vis spectroscopy showed that all three synthesis routes lead to ZnS powders with aggregate sizes between 650 and 1200 nm. Both of the TAA-precipitation routes lead to spherical agglomerates which consist of spherical substructures, whereas the HMDST agglomerates are assembled from elongated objects. PMID:18351732

  15. Experimental evidence of tunable space-charge-layer-induced electrical properties of nanocrystalline ceria thin films.

    PubMed

    Lee, Kyung-Ryul; Lee, Jong-Ho; Yoo, Han-Ill

    2013-10-01

    Fully dense nanocrystalline ceria films were successfully deposited on a MgO single crystal by pulsed laser deposition (PLD). The electrical conductivity of the nanocrystalline thin film was 20 times higher than that of the bulk sample. The activation energy of bulk ceria was 2.3 eV, whereas the activation energy of the nanocrystalline sample was only 1.2 eV. After post-annealing at 1273 K in which the grain size of the nanocrystalline thin film increased to ~400 nm, the electrical conductivity and activation energy of the film were changed similar to those of bulk. These unique electrical properties of the nano-crystalline thin-film can be attributed to the grain size effect, or more specifically, to the space charge layer (SCL) effect. Furthermore, the electrical conductivity of the nanocrystalline thin film became similar to that of the bulk in an extremely reducing atmosphere because of the unusual dependence of the SCL effect on the oxygen partial pressure. PMID:23942424

  16. Electrodeposited ZnS Precursor Layer with Improved Electrooptical Properties for Efficient Cu2ZnSnS4 Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-10-01

    Zinc sulfide (ZnS) thin films were prepared on indium tin oxide-coated glass by electrodeposition using aqueous zinc sulfate, thiourea, and ammonia solutions at 80°C. The effects of sulfurization at temperatures of 350°C, 400°C, 450°C, and 500°C on the morphological, structural, optical, and electrical properties of the ZnS thin films were investigated. X-ray diffraction analysis showed that the ZnS thin films exhibited cubic zincblende structure with preferred (111) orientation. The film crystallization improved with increasing annealing temperature. Field-emission scanning electron microscopy images showed that the film morphology became more compact and uniform with increasing annealing temperature. The percentage of sulfur in the ZnS thin films increased after sulfurization until a stoichiometric S/Zn ratio was achieved at 500°C. The annealed films showed good adhesion to the glass substrates, with moderate transmittance (85%) in the visible region. Based on absorption measurements, the direct bandgap increased from 3.71 eV to 3.79 eV with annealing temperature, which is attributed to the change of the buffer material composition and suitable crystal surface properties for effective p- n junction formation. The ZnS thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 1.86%.

  17. Ultrasensitive, Real-time and Discriminative Detection of Improvised Explosives by Chemiresistive Thin-film Sensory Array of Mn(2+) Tailored Hierarchical ZnS.

    PubMed

    Zhou, Chaoyu; Wu, Zhaofeng; Guo, Yanan; Li, Yushu; Cao, Hongyu; Zheng, Xuefang; Dou, Xincun

    2016-01-01

    A simple method combing Mn(2+) doping with a hierarchical structure was developed for the improvement of thin-film sensors and efficient detection of the explosives relevant to improvised explosive devices (IEDs). ZnS hierarchical nanospheres (HNs) were prepared via a solution-based route and their sensing performances were manipulated by Mn(2+) doping. The responses of the sensors based on ZnS HNs towards 8 explosives generally increase firstly and then decrease with the increase of the doped Mn(2+) concentration, reaching the climate at 5% Mn(2+). Furthermore, the sensory array based on ZnS HNs with different doping levels achieved the sensitive and discriminative detection of 6 analytes relevant to IEDs and 2 military explosives in less than 5 s at room temperature. Importantly, the superior sensing performances make ZnS HNs material interesting in the field of chemiresistive sensors, and this simple method could be a very promising strategy to put the sensors based on thin-films of one-dimensional (1D) nanostructures into practical IEDs detection. PMID:27161193

  18. Ultrasensitive, Real-time and Discriminative Detection of Improvised Explosives by Chemiresistive Thin-film Sensory Array of Mn2+ Tailored Hierarchical ZnS

    NASA Astrophysics Data System (ADS)

    Zhou, Chaoyu; Wu, Zhaofeng; Guo, Yanan; Li, Yushu; Cao, Hongyu; Zheng, Xuefang; Dou, Xincun

    2016-05-01

    A simple method combing Mn2+ doping with a hierarchical structure was developed for the improvement of thin-film sensors and efficient detection of the explosives relevant to improvised explosive devices (IEDs). ZnS hierarchical nanospheres (HNs) were prepared via a solution-based route and their sensing performances were manipulated by Mn2+ doping. The responses of the sensors based on ZnS HNs towards 8 explosives generally increase firstly and then decrease with the increase of the doped Mn2+ concentration, reaching the climate at 5% Mn2+. Furthermore, the sensory array based on ZnS HNs with different doping levels achieved the sensitive and discriminative detection of 6 analytes relevant to IEDs and 2 military explosives in less than 5 s at room temperature. Importantly, the superior sensing performances make ZnS HNs material interesting in the field of chemiresistive sensors, and this simple method could be a very promising strategy to put the sensors based on thin-films of one-dimensional (1D) nanostructures into practical IEDs detection.

  19. Ultrasensitive, Real-time and Discriminative Detection of Improvised Explosives by Chemiresistive Thin-film Sensory Array of Mn2+ Tailored Hierarchical ZnS

    PubMed Central

    Zhou, Chaoyu; Wu, Zhaofeng; Guo, Yanan; Li, Yushu; Cao, Hongyu; Zheng, Xuefang; Dou, Xincun

    2016-01-01

    A simple method combing Mn2+ doping with a hierarchical structure was developed for the improvement of thin-film sensors and efficient detection of the explosives relevant to improvised explosive devices (IEDs). ZnS hierarchical nanospheres (HNs) were prepared via a solution-based route and their sensing performances were manipulated by Mn2+ doping. The responses of the sensors based on ZnS HNs towards 8 explosives generally increase firstly and then decrease with the increase of the doped Mn2+ concentration, reaching the climate at 5% Mn2+. Furthermore, the sensory array based on ZnS HNs with different doping levels achieved the sensitive and discriminative detection of 6 analytes relevant to IEDs and 2 military explosives in less than 5 s at room temperature. Importantly, the superior sensing performances make ZnS HNs material interesting in the field of chemiresistive sensors, and this simple method could be a very promising strategy to put the sensors based on thin-films of one-dimensional (1D) nanostructures into practical IEDs detection. PMID:27161193

  20. Ferroelectric polarization in nanocrystalline hydroxyapatite thin films on silicon.

    PubMed

    Lang, S B; Tofail, S A M; Kholkin, A L; Wojtaś, M; Gregor, M; Gandhi, A A; Wang, Y; Bauer, S; Krause, M; Plecenik, A

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone--a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  1. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    NASA Astrophysics Data System (ADS)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-07-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics.

  2. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    PubMed Central

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  3. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.

    1998-01-01

    A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

  4. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, D.M.; Krauss, A.R.

    1998-06-30

    A method and system are disclosed for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip. 40 figs.

  5. Effect of deposition variables on properties of CBD ZnS thin films prepared in chemical bath of ZnSO4/SC(NH2)2/Na3C3H5O7/NH4OH

    NASA Astrophysics Data System (ADS)

    Liu, Wei-Long; Yang, Chang-Siao; Hsieh, Shu-Huei; Chen, Wen-Jauh; Fern, Chi-Lon

    2013-01-01

    The CBD ZnS thin films were prepared on substrates of soda lime glass in chemical bath. The effect of deposition variables including zinc sulfate, thiourea, tri-sodium citrate, ammoina water, bath temperature, and deposition time on the properties of CBD ZnS thin films were comprehensively studied. The CBD ZnS thin films were characterized by a field emission scanning electron microscope (FESEM) for the surface and cross section morphologies and thicknesses, an energy dispersive spectrometer equipped in FESEM for the atomic% of Zn and S, an ultraviolet-visible spectrometer (300-800 nm) for the transmittance and energy gap, and an atomic force microscope for the surface roughness. The results showed that the CBD ZnS thin films have a transmittance for ultraviolet-visible rays (300-800 nm) from 70.8 to 87.8%. The CBD ZnS thin films prepared in bath 5 have an energy gap from 3.881 to 3.980 eV. The CBD ZnS thin films prepared in bath 6 have a growth rate from 1.8 to 3.2 nm/min and activation energy of 59.8 kJ/mol for their growth.

  6. Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

    SciTech Connect

    Vashistha, Indu B. Sharma, S. K.; Sharma, Mahesh C.; Sharma, Ramphal

    2015-08-28

    In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5 eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.

  7. Implantation induced hardening of nanocrystalline titanium thin films.

    PubMed

    Krishnan, R; Amirthapandian, S; Mangamma, G; Ramaseshan, R; Dash, S; Tyagi, A K; Jayaram, V; Raj, Baldev

    2009-09-01

    Formation of nanocrystalline TiN at low temperatures was demonstrated by combining Pulsed Laser Deposition (PLD) and ion implantation techniques. The Ti films of nominal thickness approximatly 250 nm were deposited at a substrate temperature of 200 degrees C by ablating a high pure titanium target in UHV conditions using a nanosecond pulsed Nd:YAG laser operating at 1064 nm. These films were implanted with 100 keV N+ ions with fluence ranging from 1.0 x 10(16) ions/cm2 to 1.0 x 10(17) ions/cm2 The structural, compositional and morphological evolutions were tracked using Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM), respectively. TEM analysis revealed that the as-deposited titanium film is an fcc phase. With increasing ion fluence, its structure becomes amorphous phase before precipitation of nanocrystalline fcc TIN phase. Compositional depth profiles obtained from SIMS have shown the extent of nitrogen concentration gradient in the implantation zone. Both as-deposited and ion implanted films showed much higher hardness as compared to the bulk titanium. AFM studies revealed a gradual increase in surface roughness leading to surface patterning with increase in ion fluence. PMID:19928244

  8. Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

    SciTech Connect

    Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

    2014-12-01

    This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

  9. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    NASA Technical Reports Server (NTRS)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-01-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  10. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of ˜20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  11. Dye-Sensitization Of Nanocrystalline ZnO Thin Films

    SciTech Connect

    Ajimsha, R. S.; Tyagi, M.; Das, A. K.; Misra, P.; Kukreja, L. M.

    2010-12-01

    Nannocrystalline and nanoporus thin films of ZnO were synthesized on glass substrates by using wet chemical drop casting method. X-ray diffraction measurements on these samples confirmed the formation of ZnO nanocrystallites in hexagonal wurtzite phase with mean size of {approx}20 nm. Photo sensitization of these nanostructured ZnO thin films was carried out using three types of dyes Rhodamine 6 G, Chlorophyll and cocktail of Rhodamine 6 G and Chlorophyll in 1:1 ratio. Dye sensitized ZnO thin films showed enhanced optical absorption in visible spectral region compared to the pristine ZnO thin films.

  12. Fabrication and Characterization of Amorphous/Nanocrystalline Thin Film Composite

    NASA Astrophysics Data System (ADS)

    Newton, Benjamin S.

    Combining the absorption abilities of amorphous silicon and the electron transport capabilities of crystalline silicon would be a great advantage to not only solar cells but other semiconductor devices. In this work composite films were created using molecular beam epitaxy and electron beam deposition interchangeably as a method to create metallic precursors. Aluminum induced crystallization techniques were used to convert an amorphous silicon film with a capping layer of aluminum nanodots into a film composed of a mixture of amorphous silicon and nanocrystalline silicon. This layer was grown into the amorphous layer by cannibalizing a portion of the amorphous silicon material during the aluminum induced crystallization. Characterization was performed on films and metallic precursors utilizing SEM, TEM, ellipsometry and spectrophotometer.

  13. Enhanced optical constants of nanocrystalline yttrium oxide thin films

    SciTech Connect

    Ramana, C. V.; Mudavakkat, V. H.; Bharathi, K. Kamala; Atuchin, V. V.; Pokrovsky, L. D.; Kruchinin, V. N.

    2011-01-17

    Yttrium oxide (Y{sub 2}O{sub 3}) films with an average crystallite-size (L) ranging from 5 to 40 nm were grown by sputter-deposition onto Si(100) substrates. The optical properties of grown Y{sub 2}O{sub 3} films were evaluated using spectroscopic ellipsometry measurements. The size-effects were significant on the optical constants and their dispersion profiles of Y{sub 2}O{sub 3} films. A significant enhancement in the index of refraction (n) is observed in well-defined Y{sub 2}O{sub 3} nanocrystalline films compared to that of amorphous Y{sub 2}O{sub 3}. A direct, linear L-n relationship found for Y{sub 2}O{sub 3} films suggests that tuning optical properties for desired applications can be achieved by controlling the size at the nanoscale dimensions.

  14. Microstructural evolution of nanocrystalline nickel thin films due to high-energy heavy-ion irradiation

    SciTech Connect

    Rajasekhara, S.; Ferreira, P. J.; Hattar, K.

    2013-04-19

    This initial feasibility study demonstrates that recent advancements in precession electron diffraction microscopy can be applied to nanostructured metals exposed to high displacement damage from a Tandem accelerator. In this study, high purity, nanocrystalline, free-standing nickel thin films produced by pulsed laser deposition were irradiated with approximately 3 Multiplication-Sign 10{sup 14} ions/cm{sup 2} of 35 MeV Ni{sup 6+} ions resulting in an approximately uniform damage profile to approximately 16 dpa. Pristine and ionirradiated regions of the nanocrystalline Ni films were characterized by conventional transmission electron microscopy and precession electron diffraction microscopy. Precession electron diffraction microscopy provided additional insight into the texture, phase, and grain boundary distribution resulting from the displacement damage that could not be obtained from traditional electron microscopy techniques. For the nanocrystalline nickel film studied, this included the growth in number and percentage of a metastable hexagonal closed packed phase grains and the formation of large <001> textured face centered cubic grains. The application of precession electron diffraction microscopy to characterize other nanocrystalline metals, which are being considered for radiation tolerant applications, will permit a comparison of materials that goes beyond the dominant length scale to consider the effects of local phase, texture, and grain boundary or interface information.

  15. RF sputter deposited nanocrystalline (110) magnetite thin film from alpha-Fe2O3 target.

    PubMed

    Bohra, Murtaza; Venkataramani, N; Prasad, Shiva; Kumar, Naresh; Misra, D S; Sahoo, S C; Krishnan, R

    2007-06-01

    Nanocrystalline magnetite thin film was prepared on to fused quartz substrate by sputtering at an rf power of 50 W. X-ray diffraction study showed that the sputtered film was (110) oriented. The stoichiometry in the thin film has been confirmed through a variety of characterization techniques. The room temperature spontaneous magnetization value (4piMs) of the film was 5100 G. This is about 85% of the bulk value. The resistivity of the film showed a sharp change around 120 K, indicative of the Verwey transition. PMID:17654991

  16. The influence of substrate temperature on the structural and optical properties of ZnS thin films

    SciTech Connect

    Ashraf, M.; Akhtar, S. M. J.; Ali, Z.; Qayyum, A.

    2011-05-15

    Thin films of ZnS were deposited on soda lime glass substrates by a modified close-space sublimation technique. The change in optical and structural properties of the films deposited at various substrate temperatures (150-450 Degree-Sign C) was investigated. X-ray diffraction spectra showed that films were polycrystalline in nature having cubic structure oriented only along (111) plan. The crystallinity of films increased with the substrate temperature up to 250 Degree-Sign C. However, crystallinity decreased with further increase of substrate temperature and films became amorphous at 450 Degree-Sign C. The atomic force microscopy data revealed that the films become more uniform and dense with the increase of substrate temperature. Optical properties of the films were determined from the transmittance data using Swanepoel model. It was observed that the energy band gap is increased from 3.52 to 3.65 eV and refractive index of the films are decreased with the increase of substrate temperature. Moreover, considerable improvement in blue response of the films was noticed with increasing substrate temperature.

  17. Intrinsic Doping in Electrodeposited ZnS Thin Films for Application in Large-Area Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Madugu, Mohammad Lamido; Olusola, Olajide Ibukun-Olu; Echendu, Obi Kingsley; Kadem, Burak; Dharmadasa, Imyhamy Mudiy

    2016-06-01

    Zinc sulphide (ZnS) thin films with both n- and p-type electrical conductivity were grown on glass/fluorine-doped tin oxide-conducting substrates from acidic and aqueous solution containing ZnSO4 and (NH4)2S2O3 by simply changing the deposition potential in a two-electrode cell configuration. After deposition, the films were characterised using various analytical techniques. X-ray diffraction analysis reveals that the materials are amorphous even after heat treatment. Optical properties (transmittance, absorbance and optical bandgap) of the films were studied. The bandgaps of the films were found to be in the range (3.68-3.86) eV depending on the growth voltage. Photoelectrochemical cell measurements show both n- and p-type electrical conductivity for the films depending on the growth voltage. Scanning electron microscopy shows material clusters on the surface with no significant change after heat treatment at different temperatures. Atomic force microscopy shows that the surface roughness of these materials remain fairly constant reducing only from 18 nm to 17 nm after heat treatment. Thickness estimation of the films was also carried out using theoretical and experimental methods. Direct current conductivity measurements on both as-deposited and annealed films show that resistivity increased after heat treatment.

  18. Hydrothermal synthesis of {beta}-nickel hydroxide nanocrystalline thin film and growth of oriented carbon nanofibers

    SciTech Connect

    Zhang Enlei; Tang Yuanhong; Zhang Yong; Guo Chi; Yang Lei

    2009-08-05

    Novel well-crystallized {beta}-nickel hydroxide nanocrystalline thin films were successfully synthesized at low temperature on the quartz substrates by hydrothermal method, and the oriented carbon nanofibers (CNFs) were prepared by acetylene cracking at 750 deg. C on thin film as the catalyst precursor. High resolution transmission electron microscopy (HR-TEM) measurement shows that thin films were constructed mainly with hexagonal {beta}-nickel hydroxide nanosheets. The average diameter of the nanosheets was about 80 nm and thickness about 15 nm. Hydrothermal temperature played an important role in the film growth process, influencing the morphologies and catalytic activity of the Ni catalysts. Ni thin films with high catalytic activity were obtained by reduction of these Ni(OH){sub 2} nanocrystalline thin films synthesized at 170 deg. C for 2 h in hydrothermal condition. The highest carbon yield was 1182%, and was significantly higher than the value of the catalyst precursor which was previously reported as the carbon yield (398%) for Ni catalysts. The morphology and growth mechanism of oriented CNFs were also studied finally.

  19. The role of confinement on stress-driven grain boundary motion in nanocrystalline aluminum thin films

    NASA Astrophysics Data System (ADS)

    Gianola, Daniel S.; Farkas, Diana; Gamarra, Martin; He, Mo-rigen

    2012-12-01

    3D molecular dynamics simulations are performed to investigate the role of microstructural confinement on room temperature stress-driven grain boundary (GB) motion for a general population of GBs in nanocrystalline Al thin films. Detailed analysis and comparison with experimental results reveal how coupled GB migration and GB sliding are manifested in realistic nanoscale networks of GBs. The proximity of free surfaces to GBs plays a significant role in their mobility and results in unique surface topography evolution. We highlight the effects of microstructural features, such as triple junctions, as constraints to otherwise uninhibited GB motion. We also study the pinning effects of impurities segregated to GBs that hinder their motion. Finally, the implications of GB motion as a deformation mechanism governing the mechanical behavior of nanocrystalline materials are discussed.

  20. Synthesis and characterization of nanocrystalline MoBi2Te5 thin films for photoelectrode applications

    NASA Astrophysics Data System (ADS)

    Salunkhe, M. M.; Kharade, R. R.; Mane, R. M.; Bhosale, P. N.

    2012-10-01

    Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using arrested precipitation technique which is based on self-organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110°C and further characterized for their optical, structural, morphological, compositional, and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (E g) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi2Te5 thin films are granular, nanocrystalline having rhombohedral structure. The compositional analysis showed close agreements in theoretical and experimental atomic percentages of Mo4+, Bi3+, and Te2- suggest that chemical formula MoBi2Te5 assigned to as deposited molybdenum bismuth telluride new material is confirmed. The electrical conductivity and thermoelectric power measurement showed that the films are semiconducting with n-type conduction. The fill factor and conversion efficiency was characterized by photoelectrochemical (PEC) technique. In this article, we report the optostructural, morphological, compositional, and electrical characteristics of nanocrystalline MoBi2Te5 thin films to check its suitability as photoelectrode in PEC cell.

  1. In-Situ Transmission Electron Microscope High Temperature Behavior in Nanocrystalline Platinum Thin Films

    NASA Astrophysics Data System (ADS)

    Garcia, Davil; Leon, Alexander; Kumar, Sandeep

    2016-01-01

    In this work, we present a micro electro-mechanical systems (MEMS)-based in situ transmission electron microscope (TEM) experimental setup for high-temperature uniaxial tensile behavior of nanocrystalline thin films. This setup utilizes self-heating (Ohmic) to raise the temperature of thin films while applying uniaxial tensile loading using electro-thermal actuators. Self-heating is achieved by passing a high-density direct current through the specimen. We carried out a qualitative uniaxial tensile experiment on a 75-nm platinum thin film at 360 K. Temperature is estimated using COMSOL modeling. In this qualitative experiment, we observed initial grain growth followed by formation of edge serrations. We propose that grain boundary sliding coupled with grain growth is the underlying mechanism responsible for the observed behavior.

  2. Correlation between surface chemistry, density, and band gap in nanocrystalline WO3 thin films.

    PubMed

    Vemuri, R S; Engelhard, M H; Ramana, C V

    2012-03-01

    Nanocrystalline WO(3) thin films were produced by sputter-deposition by varying the ratio of argon to oxygen in the reactive gas mixture during deposition. The surface chemistry, physical characteristics, and optical properties of nanocrystalline WO(3) films were evaluated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray reflectivity (XRR), and spectrophotometric measurements. The effect of ultramicrostructure was significant on the optical properties of WO(3) films. The XPS analyses indicate the formation of stoichiometric WO(3) with tungsten existing in fully oxidized valence state (W(6+)). However, WO(3) films grown at high oxygen concentration (>60%) in the sputtering gas mixture were over stoichiometric with excess oxygen. XRR simulations based on isotropic WO(3) film-SiO(2) interface-Si substrate modeling indicate that the density of WO(3) films is sensitive to the oxygen content in the sputtering gas. The spectral transmission of the films increased with increasing oxygen. The band gap of these films increases from 2.78 to 3.25 eV with increasing oxygen. A direct correlation between the film density and band gap in nanocrystalline WO(3) films is established on the basis of the observed results. PMID:22332637

  3. Correlation between surface chemistry, density and band gap in nanocrystalline WO3 thin films

    SciTech Connect

    Vemuri, Venkata Rama Ses; Engelhard, Mark H.; Ramana, C.V.

    2012-03-01

    Nanocrystalline WO3 thin films were produced by sputter-deposition by varying the ratio of argon to oxygen in the reactive gas mixture during deposition. The surface chemistry, physical characteristics, and optical properties of nanocrystalline WO3 films were evaluated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray reflectivity (XRR), and spectrophotometric measurements. The effect of ultra-microstructure was significant on the optical properties of WO3 films. The XPS analyses indicate the formation of stoichiometric WO3 with tungsten existing in fully oxidized valence state (W6+). However, WO3 films grown at high oxygen concentration (>60%) in the sputtering gas mixture were over stoichiometric with excess oxygen. XRR simulations, which are based on isotropic WO3 film - SiO2 interface - Si substrate model, indicate that the density of WO3 films is sensitive to the oxygen content in the sputtering gas. The spectral transmission of the films increased with the increasing oxygen. The band gap of these films increases from 2.78 eV to 3.25 eV with increasing oxygen. A direct correlation between the film-density and band gap in nanocrystalline WO3 films is established based on the observed results.

  4. Photoconductivity on nanocrystalline ZnO/TiO2 thin films obtained by sol-gel

    NASA Astrophysics Data System (ADS)

    Valverde-Aguilar, G.; García-Macedo, J. A.; Juárez-Arenas, R.

    2008-08-01

    In this paper we report results on the synthesis, characterization and photoconductivity behaviour of amorphous and nanocrystalline ZnO/TiO2 thin films. They were produced by the sol-gel process at room temperature by using the spin-coating method and deposited on glass substrates. The ZnO/TiO2 films were synthesized by using tetrabutyl orthotitanate and zinc nitrate hexahydrate as the inorganic precursors. The samples were sintered at 520°C for 1 hour. The obtained films were characterized by X-ray diffraction (XRD), optical absorption (OA), infrared spectroscopy (IR) and scanning electronic microscopy (SEM) studies. Photoconductivity studies were performed on amorphous and nanocrystalline (anatase phase) films to determine the charge transport parameters. The experimental data were fitted with straight lines at darkness and under illumination at 310 nm, 439 nm and 633 nm. This indicates an ohmic behavior. The Φμτ and Φl0 parameters were fitted by least-squares with straight lines (nanocrystalline films) and polynomial fits (amorphous films).

  5. Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Choi, Hyun-Sik; Jeon, Sanghun

    2014-03-01

    Persistent photoconductivity (PPC) in nanocrystalline InZnO thin-film transistors (TFTs) was studied using carrier fluctuation measurements and transient analysis. Low-frequency noise measurements and decay kinetics indicate that the band bending by the external field together with the ionized oxygen vacancy (Vo++) generated during the light exposure is the main cause of the PPC phenomenon. Based on these observations, a field-induced macroscopic barrier model is proposed as the origin of PPC for InZnO TFTs. In particular, this model explains that the carrier separation between e and Vo++ is induced by the external field applied to the three electrodes inside the transistor.

  6. Thin nanocrystalline zirconia films prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Dikovska, A. Og; Atanasova, G. B.; Avdeev, G. V.; Strijkova, V. Y.

    2016-03-01

    In the present work, thin zirconia films were prepared by pulsed laser deposition at different substrate temperatures and oxygen partial pressures. The substrate temperature was varied from 400 °C to 600 °C, and the oxygen pressure, from 0.01 to 0.05 mbar. The effect was investigated of the substrate temperature and oxygen pressure on the formation of m-zirconia and t-zirconia phases.The formation of a cubic phase of ZrO2 by using targets doped with 3 and 8 mol % content Y2O3 was also investigated. The variation in the optical properties was studied and discussed in relation with the zirconia films' microstructure.

  7. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  8. Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

    SciTech Connect

    Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana

    2014-04-24

    Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

  9. Sulfidation of electrodeposited microcrystalline/nanocrystalline cuprous oxide thin films for solar energy applications

    NASA Astrophysics Data System (ADS)

    Jayathilaka, K. M. D. C.; Kapaklis, V.; Siripala, W.; Jayanetti, J. K. D. S.

    2012-12-01

    Grain size of polycrystalline semiconductor thin films in solar cells is optimized to enhance the efficiency of solar cells. This paper reports results on an investigation carried out on electrodeposited n-type cuprous oxide (Cu2O) thin films on Ti substrates with small crystallites and sulfidation of them to produce a thin-film solar cell. During electrodeposition of Cu2O films, pH of an aqueous acetate bath was optimized to obtain films of grain size of about 100 nm, that were then used as templates to grow thicker n-type nanocrystalline Cu2O films. XRD and SEM analysis revealed that the films were of single phase and the substrates were well covered by the films. A junction of Cu2O/CuxS was formed by partially sulfiding the Cu2O films using an aqueous sodium sulfide solution. It was observed that the photovoltaic properties of nano Cu2O/CuxS heterojunction structures are better than micro Cu2O/CuxS heterojunction solar cells. Resulting Ti/nano Cu2O/CuxS/Au solar cell structure produced an energy conversion efficiency of 0.54%, Voc = 610 mV and Jsc = 3.4 mA cm-2, under AM 1.5 illumination. This is a significant improvement compared to the use of microcrystalline thin film Cu2O in the solar cell structure where the efficiency of the cell was limited to 0.11%. This improvement is attributed mainly to the increased film surface area associated with nanocrystalline Cu2O films.

  10. Photoconducting nanocrystalline lead sulphide thin films obtained by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Kotadiya, Naresh B.; Kothari, Anjana J.; Tiwari, Devendra; Chaudhuri, Tapas K.

    2012-09-01

    A chemical bath deposition method of preparing photoconducting nanocrystalline lead sulphide (PbS) thin films at room temperature (RT) is described. The aqueous bath of lead acetate, thiourea, and ammonium hydroxide produce films of about 100 nm thicknesses in 45 minutes. X-ray diffraction (XRD) studies show that these films are nanocrystalline cubic PbS with 10 nm crystallite size. Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) revealed that the films consist of spherical grains of sizes 100 to 200 nm. The transmission spectra of the films show onset of absorption edge around 850 nm and the bandgap is around 1.65 eV. The films are p-type with dark conductivity of 2.5×10-3 S/cm and mobility of 0.07 cm2/Vṡs. The photosensitivity is 6-7 for an illumination of 80 mW/cm2 from a halogen lamp (50 W, 12 V). Transient photoconductivity measurements reveal short and long life times of minority carriers. Thermoelectric and photothermoelectric studies show that photoconductivity in these films is mainly due to photogenerated majority carriers.

  11. Structural and nanomechanical properties of nanocrystalline carbon thin films for photodetection

    SciTech Connect

    Rawal, Ishpal; Panwar, Omvir Singh Tripathi, Ravi Kant; Chockalingam, Sreekumar; Srivastava, Avanish Kumar; Kumar, Mahesh

    2015-05-15

    This paper reports the effect of helium gas pressure upon the structural, nanomechanical, and photoconductive properties of nanocrystalline carbon thin (NCT) films deposited by the filtered cathodic jet carbon arc technique. High-resolution transmission electron microscopy images confirm the nanocrystalline nature of the deposited films with different crystallite sizes (3–7 nm). The chemical structure of the deposited films is further analyzed by x-ray photoelectron spectroscopy and Raman spectroscopy, which suggest that the deposited films change from graphitelike to diamondlike, increasing in sp{sup 3} content, with a minor change in the dilution of the inert gas (helium). The graphitic character is regained upon higher dilution of the helium gas, whereupon the films exhibit an increase in sp{sup 2} content. The nanomechanical measurements show that the film deposited at a helium partial pressure of 2.2 × 10{sup −4} has the highest value of hardness (37.39 GPa) and elastic modulus (320.50 GPa). At a light intensity of 100 mW/cm{sup 2}, the NCT films deposited at 2.2 × 10{sup −4} and 0.1 mbar partial pressures of helium gas exhibit good photoresponses of 2.2% and 3.6%, respectively.

  12. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    SciTech Connect

    Shi, Zhiwei; Walker, Amy V.

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  13. Guided assembly of nanoparticles on electrostatically charged nanocrystalline diamond thin films

    PubMed Central

    2011-01-01

    We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp2 phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp2 phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy) is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems. PMID:21711679

  14. Dip coated nanocrystalline CdZnS thin films for solar cell application

    NASA Astrophysics Data System (ADS)

    Dongre, J. K.; Chaturvedi, Mahim; Patil, Yuvraj; Sharma, Sandhya; Jain, U. K.

    2015-07-01

    Nanocrystalline cadmium sulfide (CdS) and zinc cadmium sulfide (ZnCdS) thin films have been grown via simple and low cost dip coating technique. The prepared films are characterized by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV-VIS spectrophotometer techniques to reveal their structural, morphological and optical properties. XRD shows that both samples grown have zinc blende structure. The grain size is calculated as 6.2 and 8 nm using Scherrer's formula. The band gap value of CdS and CdZnS film is estimated to be 2.58 and 2.69 eV respectively by UV-vis spectroscopy. Photoelectrochemical (PEC) investigations are carried out using cell configuration as n-CdZnS/(1M NaOH + 1M Na2S + 1M S)/C. The photovoltaic output characteristic is used to calculate fill-factor (FF) and solar conversion efficiency (η).

  15. Mechanism of stress relaxation in nanocrystalline Fe-N thin films

    NASA Astrophysics Data System (ADS)

    Gupta, Ranjeeta; Gupta, Ajay; Leitenberger, W.; Rüffer, R.

    2012-02-01

    The mechanism of stress relaxation in nanocrystalline Fe-N thin film has been studied. The as-deposited film possesses a strong in-plane compressive stress which relaxes with thermal annealing. Precise diffusion measurements using nuclear resonance reflectivity show that stress relaxation does not involve any long-range diffusion of Fe atoms. Rather, a redistribution of nitrogen atoms at various interstitial sites, as evidenced by conversion electron Mössbauer spectroscopy, is responsible for the relaxation of internal stresses. On the other hand, formation of the γ'-Fe4N phase at temperatures above 523 K involves long-range rearrangement of Fe atoms. The activation energy for Fe self-diffusion is found to be 0.38±0.04 eV.

  16. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  17. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGESBeta

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  18. Temperature dependence of FMR and magnetization in nanocrystalline zinc ferrite thin films

    NASA Astrophysics Data System (ADS)

    Sahu, B. N.; Doshi, Akash S.; Prabhu, R.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

    2016-05-01

    Single phase nano-crystalline zinc ferrite thin films were deposited by RF-magnetron sputtering on quartz substrate at room temperature (RT) in pure Argon environment and annealed (in air) at different temperatures. Temperature dependence of magnetization was studied on these films using both VSM and by observing FMR (in X band). Value of exchange stiffness constant (D) was obtained by fitting Bloch's law to the low temperature magnetization data. The value of D decreased monotonously with the annealing temperature (TA) of the samples. A film annealed at TA = 523 K, exhibited the highest magnetization value. The FMR line width of the films decreased with increase in measurement temperature. At RT (˜293 K), the lowest value of line width (ΔH) was 15 kA/m and 13 kA/m in parallel and perpendicular configuration respectively for the sample annealed at TA = 623 K.

  19. Nanocrystalline SnO2:F thin films for liquid petroleum gas sensors.

    PubMed

    Chaisitsak, Sutichai

    2011-01-01

    This paper reports the improvement in the sensing performance of nanocrystalline SnO(2)-based liquid petroleum gas (LPG) sensors by doping with fluorine (F). Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer). The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO(2) films was investigated. Atomic Force Microscopy (AFM) and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO(2) with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time) of the SnO(2):F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO(2) was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C) with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO(2):F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection. PMID:22164007

  20. Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

    PubMed Central

    Chaisitsak, Sutichai

    2011-01-01

    This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG) sensors by doping with fluorine (F). Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer). The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM) and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time) of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C) with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection. PMID:22164007

  1. Simultaneous optimization of nanocrystalline SnO2 thin film deposition using multiple linear regressions.

    PubMed

    Ebrahimiasl, Saeideh; Zakaria, Azmi

    2014-01-01

    A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis. PMID:24509767

  2. Photoluminescence from doped ZnS nanostructures

    NASA Astrophysics Data System (ADS)

    Karar, N.

    2007-05-01

    Photoluminescence (PL) properties of differently doped nanocrystalline ZnS encapsulated by ZnO (ZnS/ZnO) are reported. It is found that in all cases aluminium as an extra/additional dopant leads to PL enhancement. In comparison to reported blue emitting bulk ZnS:Ag, or green emitting bulk ZnS:Cu, our nanocrystalline samples show a different PL emission profile. This observation is attributed to nanogranule formation, different dopant levels and ZnO capping related energy level modifications.

  3. Synthesis and characterization of pure anatase phase nanocrystalline TiO2 thin film by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Pawar, Nimisha; Bhargava, Ankita; Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In present work, our focus is to deposit anatase phase nanocrystalline TiO2 thin films. In order to prepare Titanium oxide films we first deposited Titanium thin films using DC magnetron sputtering and then the substrates were annealed in a muffle furnace at different temperatures. Further the samples were characterized for analysis of phase, morphology and optical properties using XRD, SEM, AFM and photoluminescence spectroscopy respectively. XRD shows the formation of tetragonal phase TiO2 with lattice parameters values a= 3.8 Å and c=9.6 Å. The surface roughness value of the films were found to vary from 1.6 nm to 15.9 nm. The grain size as estimated from AFM varies from 48 nm to 125 nm at different temperatures. Thus, the results revealed the formation of ultra-smooth anatase phase pure nanocrystalline TiO2 spherical particles.

  4. Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

    SciTech Connect

    Khan, Gobinda Gopal E-mail: sghoshphysics@gmail.com; Sarkar, Ayan; Ghosh, Shyamsundar E-mail: sghoshphysics@gmail.com; Mandal, Guruprasad; Mukherjee, Goutam Dev; Manju, Unnikrishnan; Banu, Nasrin; Dev, Bhupendra Nath

    2015-08-21

    Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

  5. Synthesis and characterization of nanocrystalline CdS thin films for highly photosensitive self-powered photodetector

    NASA Astrophysics Data System (ADS)

    Husham, Mohammed; Hassan, Zainuriah; Selman, Abass M.

    2016-04-01

    A self-powered highly photosensitive photodetector based on a nanocrystalline CdS thin film was fabricated using a microwave-assisted chemical bath deposition. In this study, highly uniform nanocrystalline CdS thin films were grown on Si(1 0 0) substrates from aqueous solutions of cadmium chloride (CdCl2) and thiourea [SC(NH2)2], which served as cadmium Cd2+ and sulfur S2- ions sources, respectively. Structural, morphological and optical analysis revealed that good-quality nanocrystalline CdS thin films were synthesized. Current-voltage (I-V) measurements of the fabricated photodetector showed a significant sensitivity to visible light at zero applied voltage, indicating that the fabricated device is a self-powered photodetector. The device was highly photosensitive to low-power visible light; it showed a sensitivity of 97.2 × 103 to (1.20 mW/cm2) 500-nm light, without an external bias. Photoresponse measurements demonstrated the highly reproducible characteristics of the fabricated photodetector with rapid response and baseline recovery time. This work introduces a simple and low-cost method for fabricating a rapid-response, highly photosensitive photodetector with zero power consumption. The mechanism of self-powered photodetectors is discussed.

  6. 3D hexagonal (R-3m) mesostructured nanocrystalline titania thin films : synthesis and characterization.

    SciTech Connect

    Choi, S. Y.; Lee, B.; Carew, D. B.; Mamak, M; Peiris, F. C.; Speakman, S.; Chopra, N.; Ozin, G. A.; X-Ray Science Division; Univ. of Toronto; ORNL; Xerox Research Centre of Canada

    2006-01-01

    A straightforward and reproducible synthesis of crack-free large-area thin films of 3D hexagonal (R-3m) mesostructured nanocrystalline titania (meso-nc-TiO{sub 2}) using a Pluronic triblock copolymer (P123)/1-butanol templating system is described. The characterization of the films is achieved using a combination of electron microscopy (high-resolution scanning electron microscopy and scanning transmission electron microscopy), grazing-incidence small-angle X-ray scattering, in situ high-temperature X-ray diffraction, and variable-angle spectroscopic ellipsometry. The mesostructure of the obtained films is found to be based upon a 3D periodic array of large elliptically shaped cages with diameters around 20 nm interconnected by windows of about 5 nm in size. The mesopores of the film calcined at 300 C are very highly ordered, and the titania framework of the film has a crystallinity of 40 % being composed of 5.8 nm sized anatase crystallites. The film displays high thermal stability in that the collapse of the pore architecture is incomplete even at 600 C. The accessible surface area of 3D hexagonal meso-nc-TiO{sub 2} estimated by the absorption of methylene blue is nearly twice as large as that of 2D hexagonal meso-nc-TiO{sub 2} at the same annealing temperature.

  7. 3D HEXAGONAL (R-3M) MESOSTRUCTURED NANOCRYSTALLINE TITANIA THIN FILMS: SYNTHESIS AND CHARACTERIZATION

    SciTech Connect

    Choi, S Y; Lee, B; Carew, D B; Peiris, F C; Mamak, M; Speakman, Scott A; Chopra, N; Ozin, G A

    2006-01-01

    A straightforward and reproducible synthesis of crack-free large-area thin films of 3D hexagonal (R-3m) mesostructured nanocrystalline titania (meso-nc-TiO{sub 2}) using a Pluronic triblock copolymer (P123)/1-butanol templating system is described. The characterization of the films is achieved using a combination of electron microscopy (high-resolution scanning electron microscopy and scanning transmission electron microscopy), grazing-incidence small-angle X-ray scattering, in situ high-temperature X-ray diffraction, and variable-angle spectroscopic ellipsometry. The mesostructure of the obtained films is found to be based upon a 3D periodic array of large elliptically shaped cages with diameters around 20 nm interconnected by windows of about 5 nm in size. The mesopores of the film calcined at 300 C are very highly ordered, and the titania framework of the film has a crystallinity of 40 % being composed of 5.8 nm sized anatase crystallites. The film displays high thermal stability in that the collapse of the pore architecture is incomplete even at 600 C. The accessible surface area of 3D hexagonal meso-nc-TiO{sub 2} estimated by the absorption of methylene blue is nearly twice as large as that of 2D hexagonal meso-nc-TiO{sub 2} at the same annealing temperature.

  8. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films.

    PubMed

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-01-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp(2) clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

  9. Power-law photoconductivity time decay in nanocrystalline TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Comedi, D.; Heluani, S. P.; Villafuerte, M.; Arce, R. D.; Koropecki, R. R.

    2007-12-01

    The sub-band-gap excited photoconductivity (PC) time decay and the film structure of rf-sputter deposited nanocrystalline TiO2 thin films have been studied. Atomic force microscopy and x-ray diffraction measurements were used to assess roughness, crystalline structure and mean grain size of the films. Samples fabricated under different deposition conditions exhibit different microstructures and absolute PC, but similar persistent PC behaviour after switching off the light source. The very slow PC decay can be well represented by a function that is nearly constant for short times and decreases as a power law for times longer than about 100 s. This function is shown to be consistent with a rate equation characterized by a relaxation time that increases linearly with time. This behaviour, in turn, agrees with predictions of a previously reported model that assumes electron-hole recombination limited by carrier-density-dependent potential barriers associated with inhomogeneities. These results may have important implications on attempts to determine distributions of trap energies from PC decay curves in TiO2.

  10. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    PubMed Central

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-01-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

  11. Exchange Bias and Unusual Initial Magnetization in Nanocrystalline Spinel Ferrite Thin Films

    NASA Astrophysics Data System (ADS)

    Alaan, Urusa; Gollapudi, Sreenivasulu; Yu, Kin Man; Shafer, Padraic; Arenholz, Elke; Srinivasan, Gopalan; Suzuki, Yuri

    2015-03-01

    We report on unconventional magnetic behavior in nanocrystalline (Mn,Zn,Fe)3O4 (MZFO) thin films grown at room temperature. Structural studies show no secondary phases, yet these films are exchange biased, with magnetic hysteresis loops shifted by as much as ~ 200 Oe at 10 K after field-cooling. The samples can be ``trained'' so that successive magnetization loops exhibit reduced exchange bias. Shifts of the hysteresis loops exist even after cooling in zero field, indicating that the MZFO is not externally biased. We attribute the exchange bias to disordered, grain-boundary-like regions that bias more ordered MZFO. Annealing experiments that improved sample crystallinity decreased the exchange bias. Higher annealing temperatures resulted in reduced coercivities, higher magnetizations, and even the elimination of the exchange bias. Annealing also removed an unusual crossover of the initial magnetization curve outside of the saturated magnetization loop. This behavior has been seen in so-called ``mictomagnetic'' alloys. Using x-ray magnetic circular dichroism measurements, we have shown that cation disorder was reduced with annealing, and correlated the atypical initial magnetization with the degree of disorder. We gratefully acknowledge the National Science Foundation for funding this research.

  12. Dip coated nanocrystalline CdZnS thin films for solar cell application

    SciTech Connect

    Dongre, J. K. Chaturvedi, Mahim; Patil, Yuvraj; Sharma, Sandhya; Jain, U. K.

    2015-07-31

    Nanocrystalline cadmium sulfide (CdS) and zinc cadmium sulfide (ZnCdS) thin films have been grown via simple and low cost dip coating technique. The prepared films are characterized by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV-VIS spectrophotometer techniques to reveal their structural, morphological and optical properties. XRD shows that both samples grown have zinc blende structure. The grain size is calculated as 6.2 and 8 nm using Scherrer’s formula. The band gap value of CdS and CdZnS film is estimated to be 2.58 and 2.69 eV respectively by UV-vis spectroscopy. Photoelectrochemical (PEC) investigations are carried out using cell configuration as n-CdZnS/(1M NaOH + 1M Na2S + 1M S)/C. The photovoltaic output characteristic is used to calculate fill-factor (FF) and solar conversion efficiency (η)

  13. Electrochemical Evaluation of Nanocrystalline Diamond Thin Films on Ti-6Al-4V Implant Alloy

    NASA Astrophysics Data System (ADS)

    Fries, Marc; Venugopalan, Ramakrishna; Vohra, Yogesh

    2002-03-01

    Some 186,000 hip replacement surgeries are peformed every year in the United States alone. About 10surgeries are revision operations to replace an implant that has most likely failed through mechanical-electrochemical interactions resulting in implant wear. The ability to enhance the resistance to such mechanical-electrochemical interaction and thereby reduce wear could result in significantly increased device lifespan. Nanocrystalline diamond (NCD) thin films were deposited on Ti-6Al-4V disk samples (processed per ASTM F86 standard for medical implant surface conditions) using microwave plasma chemical vapor deposition (MPCVD). As a first step, these samples (n=3/test per group) were subjected to electrochemical evaluation in inorganic neutral salt solution at 37 C. The electrochemical evaluation involved both impedence spectroscopy (per ASTM G106) and polarization testing (per ASTM G5). The impedence spectroscopy data indicated a significantly higher charge transfer resistance at the interface due to the protective NCD as compared to the bare or uncoated substrate. The polarization test data confirmed that this increased charge transfer resistance resulted in a decreased current density measurement. This decreased current density measurement resulted in an order of magnitude lower calculated static corrosion rate from the NCD coated samples as opposed to the uncoated controls. Future studies will focus on investigations that will facilitate transfer of these static electrochemical resistance results to a more relevant mechanical-electrochemical interaction milieu.

  14. Anodic vacuum arc developed nanocrystalline Cu-Ni and Fe-Ni thin film thermocouples

    SciTech Connect

    Mukherjee, S. K.; Sinha, M. K.; Pathak, B.; Rout, S. K.; Barhai, P. K.

    2009-12-01

    This paper deals with the development of nanocrystalline Cu-Ni and Fe-Ni thin film thermocouples (TFTCs) by using ion-assisted anodic vacuum arc deposition technique. The crystallographic structure and surface morphology of individual layer films have been studied by x-ray diffraction and scanning electron microscopy, respectively. The resistivity, temperature coefficient of resistance, and thermoelectric power of as deposited and annealed films have been measured. The observed departure of these transport parameters from their respective bulk values can be understood in terms of intrinsic scattering due to enhanced crystallite boundaries. From the measured values of thermoelectric power and the corresponding temperature coefficient of resistance of annealed Cu, Ni, and Fe films, the calculated values of log derivative of the mean free path of conduction electrons at the Fermi surface with respect to energy (U) are found to be -0.51, 3.22, and -8.39, respectively. The thermoelectric response of annealed Cu-Ni and Fe-Ni TFTCs has been studied up to a maximum temperature difference of 300 deg. C. Reproducibility of TFTCs has been examined in terms of the standard deviation in thermoelectric response of 16 test samples for each pair. Cu-Ni and Fe-Ni TFTCs agree well with their wire thermocouple equivalents. The thermoelectric power values of Cu-Ni and Fe-Ni TFTCs at 300 deg. C are found to be 0.0178 and 0.0279 mV/ deg. C, respectively.

  15. Selective Growth of Nanocrystalline 3C-SiC Thin Films on Si

    NASA Astrophysics Data System (ADS)

    Beke, D.; Pongrácz, A.; Battistig, G.; Josepovits, K.; Pécz, B.

    2010-11-01

    Epitaxial formation of SiC nanocrystals has been investigated on single crystal silicon surfaces. A simple and cheap method using reactive annealing in CO has been developed and patented by our group (BME AFT and MTA MFA). By this technique epitaxial 3C-SiC nanocrystals can be grown at the Si side of a SiO2/Si interface without void formation at the SiC/Si interface. CO diffusion and SiC nanocrystal formation on different silicon based systems (SiO2/Si, Si3N4/3Si and SiO2/LPCVD poly-Si) after CO treatment at 105 Pa at elevated temperatures (T>1000° C) will be presented. By optimizing the annealing time a thin continuous nanocrystalline SiC layer has been formed. Applying a patterned Si3N4 capping layer as a barrier layer against CO diffusion, SiC nanocrystal formation at the Si3N4/Si interface is inhibited. We will present the selective growth of SiC nanocrystals using the before mentioned technique.

  16. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    NASA Astrophysics Data System (ADS)

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-05-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

  17. Ultrananocrystalline and nanocrystalline diamond thin films for NEMS/MEMS applications.

    SciTech Connect

    Sumant, A. V.; Auciello, O.; Carpick, R. W.; Srinivasan, S.; Butler, J. E.

    2010-04-01

    There has been a tireless quest by the designers of micro- and nanoelectro mechanical systems (MEMS/NEMS) to find a suitable material alternative to conventional silicon. This is needed to develop robust, reliable, and long-endurance MEMS/NEMS with capabilities for working under demanding conditions, including harsh environments, high stresses, or with contacting and sliding surfaces. Diamond is one of the most promising candidates for this because of its superior physical, chemical, and tribomechanical properties. Ultrananocrystalline diamond (UNCD) and nanocrystalline diamond (NCD) thin films, the two most studied forms of diamond films in the last decade, have distinct growth processes and nanostructures but complementary properties. This article reviews the fundamental and applied science performed to understand key aspects of UNCD and NCD films, including the nucleation and growth, tribomechanical properties, electronic properties, and applied studies on integration with piezoelectric materials and CMOS technology. Several emerging diamond-based MEMS/NEMS applications, including high-frequency resonators, radio frequency MEMS and photonic switches, and the first commercial diamond MEMS product - monolithic diamond atomic force microscopy probes - are discussed.

  18. Room temperature growth of nanocrystalline anatase TiO 2 thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Preetam; Kaur, Davinder

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  19. Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

    NASA Astrophysics Data System (ADS)

    Craciun, V.; Craciun, D.; Socol, G.; Behdad, S.; Boesl, B.; Himcinschi, C.; Makino, H.; Socol, M.; Simeone, D.

    2016-06-01

    The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the Csbnd C bonds and a corresponding decrease of the Sisbnd C bonds in the irradiated area, which could explain the degradation of mechanical properties.

  20. Direct-Coated Photoconducting Nanocrystalline PbS Thin Films with Tunable Band Gap

    NASA Astrophysics Data System (ADS)

    Vankhade, Dhaval; Kothari, Anjana; Chaudhuri, Tapas K.

    2016-06-01

    Nanocrystalline PbS thin films are deposited on glass by direct coating from a precursor solution of lead acetate and thiourea in methanol. A single coating has a thickness of 50 nm and greater thicknesses are obtained from layer by layer deposition. The films are smooth and shiny with roughness (rms) of about 1.5 nm. X-ray diffraction studies show that films are cubic PbS with crystallite size about 10 nm. The films are p-type with dark electrical conductivities in the range of 0.4-0.5 S/cm. These films are basically photoconducting. Photoconductivity monotonically increases with increase in thickness. The band gap of the films strongly depends on the thickness of the films. The band gap decreases from 2.4 eV to 1.6 eV as the thickness is increased from 50 nm to 450 nm. The tunability of the band gap is useful for technical applications, such as solar cells and photodetectors.

  1. Transient 2D IR spectroscopy of charge injection in dye-sensitized nanocrystalline thin films.

    PubMed

    Xiong, Wei; Laaser, Jennifer E; Paoprasert, Peerasak; Franking, Ryan A; Hamers, Robert J; Gopalan, Padma; Zanni, Martin T

    2009-12-23

    We use nonlinear 2D IR spectroscopy to study TiO(2) nanocrystalline thin films sensitized with a Re dye. We find that the free electron signal, which often obscures the vibrational features in the transient absorption spectrum, is not observed in the 2D IR spectra. Its absence allows the vibrational features of the dye to be much better resolved than with the typical IR absorption probe. We observe multiple absorption bands but no cross peaks in the 2D IR spectra, which indicates that the dyes have at least three conformations. Furthermore, by using a pulse sequence in which we initiate electron transfer in the middle of the infrared pulse train, we are able to assign the excited state features by correlating them to the ground state vibrational modes and determine that the three conformations have different time scales and cross sections for electron injection. 2D IR spectroscopy is proving to be very useful in disentangling overlapping structural distributions in biological and chemical physics processes. These experiments demonstrate that nonlinear infrared probes are also a powerful new tool for studying charge transfer at interfaces. PMID:19947603

  2. Controlled growth of nanocrystalline silicon within amorphous silicon carbide thin films

    NASA Astrophysics Data System (ADS)

    Kole, Arindam; Chaudhuri, Partha

    2014-04-01

    Controlled formation of nanocrystalline silicon (nc-Si) within hydrogenated amorphous silicon carbide (a-SiC:H) thin films has been demonstrated by a rf (13.56 MHz) plasma chemical vapour deposition (PECVD) method at a low deposition temperature of 200°C by regulating the deposition pressure (Pr) between 26.7 Pa and 133.3 Pa. Evolution of the size and the crystalline silicon volume fraction within the a-SiC:H matrix has been studied by XRD, Raman and HRTEM. The study reveals that at Pr of 26.7 Pa there are mostly isolated grains of nc-Si within the a-SiC:H matrix with average size of 4.5 nm. With increase of Pr the isolated nc-Si grains coalesce more and more giving rise to larger size connected nc-Si islands which appear as microcrystalline silicon in the Raman spectra. As a result net isolated nc-Si volume fraction decreases while the total crystalline silicon volume fraction increases.

  3. Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Shyju, T. S.; Anandhi, S.; Sivakumar, R.; Garg, S. K.; Gopalakrishnan, R.

    2012-08-01

    In this paper, we report the substrate temperature induced changes in physical properties of thermal evaporated lead selenide (PbSe) thin films from the chemically synthesized nanocrystalline PbSe powders. As the first step, nanocrystalline lead selenide was synthesized by simple chemical method at 80 °C using lead nitrate [Pb(NO3)2] and sodium selenosulphate [Na2SeSO3] in the aqueous alkaline media. Ethylene Diamine Tetra acetic acid (0.1 M) was used as a complexing agent to form stable complexes with metal ions. Later on, the lead selenide thin films were deposited on the degreased glass substrates under a vacuum of 10-5 Torr at various substrate temperatures by thermal evaporation technique using the pre-synthesized nanocrystalline PbSe powders. X-ray diffraction results show the synthesized powders and the deposited PbSe films belong to cubic structure. A gradual reduction in optical bandgap of films was observed with increasing substrate temperatures, which revealed the crystallization of the films. These observations are corroborated by photoluminescence spectroscopy study. Changes in surface morphology of the films with respect to substrate temperature were studied by high resolution scanning electron microscopy and atomic force microscopy. Electrical study infers the deposited films are of p-type semiconducting nature.

  4. XPS and electroluminescence studies on SrS 1- xSe x and ZnS 1- xSe x thin films deposited by atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Ihanus, Jarkko; Lambers, Eric; Holloway, Paul H.; Ritala, Mikko; Leskelä, Markku

    2004-01-01

    SrS 1- xSe x and ZnS 1- xSe x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H 2Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS 1- xSe x and SrS 1- xSe x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS 1- xSe x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS 1- xSe x:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS 1- xSe x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.

  5. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  6. Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

    SciTech Connect

    Singh, Fouran; Kumar, Vinod; Chaudhary, Babloo; Singh, R. G.; Kumar, Sanjeev; Kapoor, A.

    2012-10-01

    This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations.

  7. Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

    SciTech Connect

    Mahajan, S. V.; Upadhye, D. S.; Bagul, S. B.; Shaikh, S. U.; Birajadar, R. B.; Siddiqui, F. Y.; Huse, N. P.; Sharma, R. B. E-mail: rps.phy@gmail.com

    2015-06-24

    Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.

  8. Magnetic domain structure in nanocrystalline Ni-Zn-Co spinel ferrite thin films using off-axis electron holography

    SciTech Connect

    Zhang, D.; Ray, N. M.; Petuskey, W. T.; Smith, D. J.; McCartney, M. R.

    2014-08-28

    We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (∼90 °C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.

  9. Direct synthesis and characterization of optically transparent conformal zinc oxide nanocrystalline thin films by rapid thermal plasma CVD

    PubMed Central

    2011-01-01

    We report a rapid, self-catalyzed, solid precursor-based thermal plasma chemical vapor deposition process for depositing a conformal, nonporous, and optically transparent nanocrystalline ZnO thin film at 130 Torr (0.17 atm). Pure solid zinc is inductively heated and melted, followed by ionization by thermal induction argon/oxygen plasma to produce conformal, nonporous nanocrystalline ZnO films at a growth rate of up to 50 nm/min on amorphous and crystalline substrates including Si (100), fused quartz, glass, muscovite, c- and a-plane sapphire (Al2O3), gold, titanium, and polyimide. X-ray diffraction indicates the grains of as-deposited ZnO to be highly textured, with the fastest growth occurring along the c-axis. The individual grains are observed to be faceted by (103) planes which are the slowest growth planes. ZnO nanocrystalline films of nominal thicknesses of 200 nm are deposited at substrate temperatures of 330°C and 160°C on metal/ceramic substrates and polymer substrates, respectively. In addition, 20-nm- and 200-nm-thick films are also deposited on quartz substrates for optical characterization. At optical spectra above 375 nm, the measured optical transmittance of a 200-nm-thick ZnO film is greater than 80%, while that of a 20-nm-thick film is close to 100%. For a 200-nm-thick ZnO film with an average grain size of 100 nm, a four-point probe measurement shows electrical conductivity of up to 910 S/m. Annealing of 200-nm-thick ZnO films in 300 sccm pure argon at temperatures ranging from 750°C to 950°C (at homologous temperatures between 0.46 and 0.54) alters the textures and morphologies of the thin film. Based on scanning electron microscope images, higher annealing temperatures appear to restructure the ZnO nanocrystalline films to form nanorods of ZnO due to a combination of grain boundary diffusion and bulk diffusion. PACS: films and coatings, 81.15.-z; nanocrystalline materials, 81.07.Bc; II-VI semiconductors, 81.05.Dz. PMID:22040295

  10. Photoluminescence of dense nanocrystalline titanium dioxide thin films: effect of doping and thickness and relation to gas sensing.

    PubMed

    Mercado, Candy; Seeley, Zachary; Bandyopadhyay, Amit; Bose, Susmita; McHale, Jeanne L

    2011-07-01

    The photoluminescence (PL) of dense nanocrystalline (anatase) TiO(2) thin films is reported as a function of calcination temperature, thickness, and tungsten and nickel doping. The dependence of the optical absorption, Raman spectra, and PL spectra on heat treatment and dopants reveals the role of oxygen vacancies, crystallinity, and phase transformation in the performance of TiO(2) films used as gas sensors. The broad visible PL from defect states of compact and undoped TiO(2) films is found to be much brighter and less sensitive to the presence of oxygen than that of mesoporous films. The dense nanocrystalline grains and the nanoparticles comprising the mesoporous film are comparable in size, demonstrating the importance of film morphology and carrier transport in determining the intensity of defect photoluminescence. At higher calcination temperatures, the transformation to rutile results in the appearance of a dominant near-infrared peak. This characteristic change in the shape of the PL spectra demonstrates efficient capture of conduction band electrons by the emerging rutile phase. The W-doped samples show diminished PL with quenching on the red side of the emission spectrum occurring at lower concentration and eventual disappearance of the PL at higher W concentration. The results are discussed within the context of the performance of the TiO(2) thin films as CO gas sensors and the chemical nature of luminescent defects. PMID:21702459

  11. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    PubMed

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced. PMID:19441448

  12. A study of structural transition in nanocrystalline titania thin films by X-ray diffraction Rietveld method

    SciTech Connect

    Murugesan, S.; Padhy, N.; Kuppusami, P.; Mudali, U. Kamachi; Mohandas, E.

    2010-12-15

    Structural and microstructural analyses of nanocrystalline titania thin films prepared by pulsed laser deposition have been carried out. At lower oxygen partial pressures ({<=}10{sup -4} mbar), rutile films were formed, whereas at 1.2 x 10{sup -3} mbar of oxygen partial pressure, the thin films contained both rutile and anatase phases. At 0.04 and 0.05 mbar of oxygen partial pressure, the film was purely anatase. Addition of oxygen has also shown a profound influence on the surface morphology of the as deposited titania films. Modified Rietveld method has been used to determine crystallite size, root mean square strain and fractional coordinates of oxygen of the anatase films. The influence of crystallite size and strain on the rutile to anatase phase transition is investigated.

  13. X-ray microstructural analysis of nanocrystalline TiZrN thin films by diffraction pattern modeling

    SciTech Connect

    Escobar, D.; Ospina, R.; Gómez, A.G.; Restrepo-Parra, E.; Arango, P.J.

    2014-02-15

    A detailed microstructural characterization of nanocrystalline TiZrN thin films grown at different substrate temperatures (T{sub S}) was carried out by X-ray diffraction (XRD). Total diffraction pattern modeling based on more meaningful microstructural parameters, such as crystallite size distribution and dislocation density, was performed to describe the microstructure of the thin films more precisely. This diffraction modeling has been implemented and used mostly to characterize powders, but the technique can be very useful to study hard thin films by taking certain considerations into account. Nanocrystalline films were grown by using the cathodic pulsed vacuum arc technique on stainless steel 316L substrates, varying the temperature from room temperature to 200 °C. Further surface morphology analysis was performed to study the dependence of grain size on substrate temperature using atomic force microscopy (AFM). The crystallite and surface grain sizes obtained and the high density of dislocations observed indicate that the films underwent nanostructured growth. Variations in these microstructural parameters as a function of T{sub S} during deposition revealed a competition between adatom mobility and desorption processes, resulting in a specific microstructure. These films also showed slight anisotropy in their microstructure, and this was incorporated into the diffraction pattern modeling. The resulting model allowed for the films' microstructure during synthesis to be better understood according to the experimental results obtained. - Highlights: • Mobility and desorption competition generates a critical temperature. • A microstructure anisotropy related to the local strain was observed in thin films. • Adatom mobility and desorption influence grain size and microstrain.

  14. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  15. Development of Mathematical Model for Prediction and Optimization of Particle Size in Nanocrystalline CdS Thin Films Prepared by Sol-Gel Spin-Coating Method

    NASA Astrophysics Data System (ADS)

    Thambidurai, M.; Muthukumarasamy, N.; Murugan, N.; Agilan, S.; Vasantha, S.; Balasundaraprabhu, R.

    2010-12-01

    Nanocrystalline CdS thin films have been prepared by the sol-gel spin-coating method. The influence of spin-coating process parameters such as, thiourea concentration (U), annealing temperature (A), rotational speed (S), and annealing time (T), and so on, on the properties of the prepared films have been studied. The experiments have been carried out based on four factor-five-level central composite designs with the full replication technique, and mathematical models have been developed using regression technique. The central composite rotatable design has been used to minimize the number of experimental parameters. The analysis of variance technique is applied to check the validity of the developed models. The developed mathematical model can be used effectively to predict the particle size in CdS nanocrystalline thin films at 95 pct confidence level. The results have been verified by depositing the films using the same condition. An ultraviolet-visible optical spectroscopy study was carried out to determine the band gap of the CdS nanocrystalline thin films. The band gap has been observed to depend strongly on particle size, and it indicated a blue shift caused by quantum confinement effects. The high-resolution transmission electron microscopy analysis showed the grain size of the prepared CdS film to be 6 nm. The main and interaction effects of deposition parameters on the properties of CdS nanocrystalline thin films also have been studied.

  16. Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

    SciTech Connect

    Kumar, Pragati Agarwal, Avinash; Saxena, Nupur; Singh, Fouran; Gupta, Vinay

    2014-07-28

    The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

  17. Grain boundary character distribution and texture evolution during surface energy-driven grain growth in nanocrystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Kobayashi, Shigeaki; Takagi, Hiroki; Watanabe, Tadao

    2013-04-01

    The evolution of grain boundary microstructure during annealing in sputtered gold thin films was investigated on the basis of FEG-SEM/EBSD/OIM analyses of nanocrystalline microstructure, in order to find a clue to the precise control of grain boundary microstructure for development of high performance polycrystalline thin films. Remarkably high fractions of coincidence site lattice (CSL) boundaries with specific Σ values such as Σ1, Σ3, Σ7, Σ13, Σ19 and Σ21 occurred in the gold thin film specimens on Pyrex glass substrate by annealing in air. The occurrence of higher fraction of these specific low-Σ boundaries is probably attributed to the evolution of a very sharp {111}-textures of different degrees which results from the preferential growth of {111}-oriented grains due to surface energy-driven grain growth. The fraction of low-Σ CSL boundaries increased with increasing area fraction of {111}-texture. The grain boundary character distribution in the gold thin film specimens was strongly affected by the annealing atmosphere and substrate materials. The sharpness of {111}-texture in the specimen annealed in low-vacuum was weaker than that in the specimen annealed in air, and an extraordinarily high fraction of Σ3 CSL boundaries occurred. The grain growth of gold thin film specimens on SiO2 glass substrate was much slower than that of specimens on Pyrex glass substrate. The fraction of low-Σ CSL boundaries observed for the gold thin film specimens on SiO2 glass substrate was lower than that in the specimens on Pyrex glass substrate. The inverse cubic root Σ dependence of low-Σ CSL boundaries in the gold thin film specimens was discussed in connection with the process of the evolution of grain boundary microstructure.

  18. Thickness-dependent photocatalytic performance of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

    NASA Astrophysics Data System (ADS)

    Wu, Chung-Yi; Lee, Yuan-Ling; Lo, Yu-Shiu; Lin, Chen-Jui; Wu, Chien-Hou

    2013-09-01

    TiO2 nanocrystalline thin films on soda lime glass have been prepared by sol-gel spin coating. The thin films were characterized for surface morphology, crystal structure, chemical composition, thickness, and transparency by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ellipsometry, and UV-vis spectrophotometry. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with calcination temperature of 450 ̊C for 3 h exhibited superior homogeneous aggregation, good optical transparency, superhydrophilicity, and reliable thickness. The effect of film thickness on the photocatalytic degradation of acid yellow 17 was investigated under UV irradiation. The photocatalytic activity was strongly correlated with the number of coatings and followed Langmuir-type kinetics. Under the same film thickness, TiO2 thin films prepared by 0.1 M TTIP exhibited more efficient photocatalytic activity than those prepared by 0.3 M TTIP. For thin films prepared by 0.1 M TTIP, the maximum specific photocatalytic activity occurred at 5 coatings with thickness of 93 ± 1 nm. A model was proposed to rationalize the dependence of the film thickness on the photocatalytic activity, which predicts the existence of an optimum film thickness.

  19. Ellipsometric and Raman spectroscopic study of nanocrystalline silicon thin films prepared by a rf magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Bouizem, Y.; Abbes, C.; Sib, J. D.; Benlakehal, D.; Baghdad, R.; Chahed, L.; Zellama, K.; Charvet, S.

    2008-11-01

    The structure of nanocrystalline silicon thin films (nc-Si:H) deposited by rf magnetron sputtering of a high-purity crystalline silicon target using argon (30%) and hydrogen (70%) gas mixture, under different pressures (P = 2, 3 and 4 Pa) and different substrate temperature (Ts = 100, 150 and 200 °C), has been studied with spectroscopic ellipsometry (SE; 1.5-5 eV) complemented with Raman spectroscopy measurements. The ellipsometry data were carefully analyzed using the Brüggeman effective medium approximation and the Tauc-Lorentz model. The results of this investigation clearly show that the samples deposited at 2 Pa present a completely amorphous structure whatever the substrate temperature, while those deposited at 3 and 4 Pa exhibit a nanocrystalline structure. These results suggest the existence of a threshold pressure around 3 Pa for which crystallization occurs. The samples are well crystallized with a crystalline volume fraction ranging from about 60 to 90%, and exhibit a mixture of small and large crystallite sizes. The deposition temperature has practically no effect on the size of the crystallites and on the average crystalline volume fractions. These results are in good agreement with the Raman spectroscopy data, and suggest the formation of Si crystallites in the gas phase. The analysis of the ellipsometric spectra also shows that the bulk layer is initiated from an amorphous interface (a-Si:H) present in the first steps of the growth, and is followed by a less crystallized subsurface layer.

  20. Enhanced performance of flexible nanocrystalline silicon thin-film solar cells using seed layers with high hydrogen dilution.

    PubMed

    Lee, Ji-Eun; Kim, Donghwan; Yoon, Kyung Hoon; Cho, Jun-Sik

    2013-12-01

    Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region. PMID:24266159

  1. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Chandel, Tarun; Singh, Joginder; Rajaram, P.

    2015-08-01

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  2. Nano-crystalline Ag-PbTe thermoelectric thin films by a multi-target PLD system

    NASA Astrophysics Data System (ADS)

    Cappelli, E.; Bellucci, A.; Medici, L.; Mezzi, A.; Kaciulis, S.; Fumagalli, F.; Di Fonzo, F.; Trucchi, D. M.

    2015-05-01

    It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical-chemical and electronic properties was evaluated in the range 300-575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30-35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  3. Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

    NASA Astrophysics Data System (ADS)

    Raja, Jayapal; Jang, Kyungsoo; Hussain, Shahzada Qamar; Balaji, Nagarajan; Chatterjee, Somenath; Velumani, S.; Yi, Junsin

    2015-01-01

    Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm2/V.s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.

  4. Intensity-dependent relaxation of photoconductivity in nanocrystalline titania thin films

    NASA Astrophysics Data System (ADS)

    Xie, Z.; Burlakov, V. M.; Henry, B. M.; Kirov, K. R.; Smith, H. E.; Grovenor, C. R. M.; Assender, H. E.; Briggs, G. A. D.; Kano, Mitsuru; Tsukahara, Yusuke

    2006-03-01

    We have discovered that the initial rate of the post-illumination decay of photoconductivity in nanocrystalline TiO2 depends on the intensity of the illumination. The phenomenon is described by hole detrapping processes affected by electrostatic interactions between the trapped holes, and screening of these interactions by free electrons. The analysis allows determination of both the electron concentration and the electron mobility. In our materials, the value of electron mobility μ≈10-6cm2V-1s-1 , in good agreement with results obtained by other methods.

  5. Deformation-induced grain growth and twinning in nanocrystalline palladium thin films

    PubMed Central

    Lohmiller, Jochen; Schäfer, Jonathan; Kerber, Michael; Castrup, Anna; Kashiwar, Ankush; Gruber, Patric A; Albe, Karsten; Hahn, Horst

    2013-01-01

    Summary The microstructure and mechanical properties of nanocrystalline Pd films prepared by magnetron sputtering have been investigated as a function of strain. The films were deposited onto polyimide substrates and tested in tensile mode. In order to follow the deformation processes in the material, several samples were strained to defined straining states, up to a maximum engineering strain of 10%, and prepared for post-mortem analysis. The nanocrystalline structure was investigated by quantitative automated crystal orientation mapping (ACOM) in a transmission electron microscope (TEM), identifying grain growth and twinning/detwinning resulting from dislocation activity as two of the mechanisms contributing to the macroscopic deformation. Depending on the initial twin density, the samples behaved differently. For low initial twin densities, an increasing twin density was found during straining. On the other hand, starting from a higher twin density, the twins were depleted with increasing strain. The findings from ACOM-TEM were confirmed by results from molecular dynamics (MD) simulations and from conventional and in-situ synchrotron X-ray diffraction (CXRD, SXRD) experiments. PMID:24205451

  6. Microstructure and strain relaxation in thin nanocrystalline platinum films produced via different sputtering techniques

    NASA Astrophysics Data System (ADS)

    Gruber, Wolfgang; Baehtz, Carsten; Horisberger, Michael; Ratschinski, Ingmar; Schmidt, Harald

    2016-04-01

    In this study we investigated the correlation between microstructure and residual strain relaxation in nanocrystalline Pt films with a thickness of about 20 nm produced by different deposition techniques: magnetron sputtering and ion beam sputtering. X-ray diffractometry was carried out using synchrotron radiation. The out-of-plane interplanar distance was measured during isothermal in situ annealing at temperatures between 130 °C und 210 °C. The thermoelastic expansion coefficient is equal for both types of nanocrystalline Pt films and slightly lower than for coarse grained Pt. The relaxation of residual out-of-plain strain depends on temperature and is significantly stronger in the case of the magnetron sputtered films than for the ion beam sputtered films. Different relaxation of compressive stress is ascribed to the different microstructures which evolve during deposition via the corresponding deposition technique. Thickness fringes around the (1 1 1) Bragg peak deposited via magnetron sputtering reveal that these films are essentially composed of columnar (1 1 1) oriented grains which cover the whole film thickness. In contrast, no thickness fringes are observed around the (1 1 1) Bragg peak of films prepared by ion beam sputtering indicating a significantly different microstructure. This is confirmed by Electron Backscatter Diffraction which reveals a (1 1 1) texture for both types of films. The (1 1 1) texture, however, is significantly stronger in the case of the magnetron sputtered films. Grain growth at low homologous temperatures is considered to be an important contribution to relaxation of residual stress.

  7. Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2016-05-01

    Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17–18 T which is the highest reported in literature for MoN thin films.

  8. A light-trapping strategy for nanocrystalline silicon thin-film solar cells using three-dimensionally assembled nanoparticle structures.

    PubMed

    Ha, Kyungyeon; Jang, Eunseok; Jang, Segeun; Lee, Jong-Kwon; Jang, Min Seok; Choi, Hoseop; Cho, Jun-Sik; Choi, Mansoo

    2016-02-01

    We report three-dimensionally assembled nanoparticle structures inducing multiple plasmon resonances for broadband light harvesting in nanocrystalline silicon (nc-Si:H) thin-film solar cells. A three-dimensional multiscale (3DM) assembly of nanoparticles generated using a multi-pin spark discharge method has been accomplished over a large area under atmospheric conditions via ion-assisted aerosol lithography. The multiscale features of the sophisticated 3DM structures exhibit surface plasmon resonances at multiple frequencies, which increase light scattering and absorption efficiency over a wide spectral range from 350-1100 nm. The multiple plasmon resonances, together with the antireflection functionality arising from the conformally deposited top surface of the 3D solar cell, lead to a 22% and an 11% improvement in power conversion efficiency of the nc-Si:H thin-film solar cells compared to flat cells and cells employing nanoparticle clusters, respectively. Finite-difference time-domain simulations were also carried out to confirm that the improved device performance mainly originates from the multiple plasmon resonances generated from three-dimensionally assembled nanoparticle structures. PMID:26751935

  9. A light-trapping strategy for nanocrystalline silicon thin-film solar cells using three-dimensionally assembled nanoparticle structures

    NASA Astrophysics Data System (ADS)

    Ha, Kyungyeon; Jang, Eunseok; Jang, Segeun; Lee, Jong-Kwon; Jang, Min Seok; Choi, Hoseop; Cho, Jun-Sik; Choi, Mansoo

    2016-02-01

    We report three-dimensionally assembled nanoparticle structures inducing multiple plasmon resonances for broadband light harvesting in nanocrystalline silicon (nc-Si:H) thin-film solar cells. A three-dimensional multiscale (3DM) assembly of nanoparticles generated using a multi-pin spark discharge method has been accomplished over a large area under atmospheric conditions via ion-assisted aerosol lithography. The multiscale features of the sophisticated 3DM structures exhibit surface plasmon resonances at multiple frequencies, which increase light scattering and absorption efficiency over a wide spectral range from 350-1100 nm. The multiple plasmon resonances, together with the antireflection functionality arising from the conformally deposited top surface of the 3D solar cell, lead to a 22% and an 11% improvement in power conversion efficiency of the nc-Si:H thin-film solar cells compared to flat cells and cells employing nanoparticle clusters, respectively. Finite-difference time-domain simulations were also carried out to confirm that the improved device performance mainly originates from the multiple plasmon resonances generated from three-dimensionally assembled nanoparticle structures.

  10. Microwave Plasma Source for Fabrication of Micro- and Nano-Crystalline Diamond Thin Films for Electronic Devices

    NASA Astrophysics Data System (ADS)

    Paosawatyanyong, Boonchoat; Rujisamphan, Nopporn; Bhanthumnavin, Worawan

    2013-01-01

    The design and utilization of an affordable compact-size high-density plasma reactor for micro- and nano-crystalline diamond (MCD/NCD) thin film deposition is presented. The system is based on a 2.45 GHz domestic microwave oven magnetron. A switching power supply module, which yields a low-voltage high-current AC filament feeding and a high-voltage low-current DC cathode bias, is constructed to serve as the magnetron power source. With a high stability of the power module combined with the usage of water cooling gaskets, over 100 h of plasma processing time was achieved without overheating or causing any damage to the magnetron. Depositions of well-faceted MCD/NCD thin films, with distinct diamond Raman characteristics, were obtained using H2-CH4 discharge with 1-5% CH4. Metal-semiconductor diode structures were fabricated using gold and aluminum as ohmic and rectifying contacts, respectively, and their responses to DC signals revealed a high rectification ratio of up to 106 in the intrinsic MCD/NCD devices.

  11. Multilayered nanocrystalline CrN/TiAlN/MoS2 tribological thin film coatings: preparation and characterization

    NASA Astrophysics Data System (ADS)

    Papp, S.; Kelemen, A.; Jakab-Farkas, L.; Vida-Simiti, I.; Biró, D.

    2013-12-01

    Nanocrystalline multilayer thin film coatings, composed of nanometer-scale thick CrN, TiAlN and MoS2 tri-layer systems, were prepared by reactive co-sputtering processes. The self-lubricated multilayer coating structures were deposited by one-fold oscillating movement of substrates in front of the sputter sources. Three independently operated direct current (dc) excited unbalanced magnetrons (UM) with rectangular cathodes of TiAl alloy (50/50%), pure chromium and MoS2 were used as sputter sources. The reactive sputtering process was performed in a mixture of Ar-N2 atmosphere. Hardened high-speed-steel (HSS) and thin oxide covered Si (100) wafers were used as substrates for tribological- and microstructure investigations, respectively. According to results of the chemical composition evaluated by Auger-electron spectroscopy (AES) and microstructure investigation by cross sectional transmission electron microscopy (XTEM), the CrN, TiAlN and the MoS2 phases form practically continuous layers with large gradient transition of composition. The as-deposited CrN/ (Al,Ti)N/MoS2 coatings have shown good friction behaviour, tested at room temperature in dry sliding condition with a ball-on-disk tribometer.

  12. Preparation and bioactive properties of nanocrystalline hydroxyapatite thin films obtained by conversion of atomic layer deposited calcium carbonate.

    PubMed

    Holopainen, Jani; Kauppinen, Kyösti; Mizohata, Kenichiro; Santala, Eero; Mikkola, Esa; Heikkilä, Mikko; Kokkonen, Hanna; Leskelä, Markku; Lehenkari, Petri; Tuukkanen, Juha; Ritala, Mikko

    2014-09-01

    Nanocrystalline hydroxyapatite thin films were fabricated on silicon and titanium by atomic layer deposition (ALD) of CaCO3 and its subsequent conversion to hydroxyapatite by diammonium hydrogen phosphate (DAP) solution. The effects of conversion process parameters to crystallinity and morphology of the films were examined. DAP concentration was found to be critical in controlling the crystal size and homogeneity of the films. The hydroxyapatite phase was identified by XRD. ToF-elastic recoil detection analysis studies revealed that the films are calcium deficient in relation to hydroxyapatite with a Ca/P ratio of 1.39 for films converted with 0.2 M DAP at 95 °C. The coatings prepared on titanium conformally follow the rough surface topography of the substrate, verifying that the good step coverage of the ALD method was maintained in the conversion process. The dissolution tests revealed that the coating was nondissolvable in the cell culture medium. Annealing the coated sample at 700 °C for 1 h seemed to enhance its bonding properties to the substrate. Also, the biocompatibility of the coatings was confirmed by human bone marrow derived cells in vitro. The developed method provides a new possibility to produce thin film coatings on titanium implants with bone-type hydroxyapatite that is biocompatible with human osteoblasts and osteoclasts. PMID:25280849

  13. Structure and electronic properties of pure and nitrogen doped nanocrystalline tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Vemuri, Venkata Rama Sesha Ravi Kumar

    Tungsten oxide (WO3) is a multifunctional material which has applications in electronics, sensors, optoelectronics, and energy-related technologies. Recently, electronic structure modification of WO3 to design novel photocatalysts has garnered significant attention. However, a fundamental understanding of nitrogen-induced changes in the structure, morphology, surface/ interface chemistry, and electronic properties of WO 3 is a prerequisite to producing materials with the desired functionality and performance. Also, understanding the effect of thermodynamic and processing variables is highly desirable in order to derive the structure-property relationships in the W-O/W-O-N material system. The present work was, therefore, focused on studying the effects of processing parameters on the microstructure, optical properties, electrical conductivity, and electronic structures of pure and nitrogen-doped (N-doped) WO3 films grown by sputter deposition. Efforts were made to understand the properties and phenomena of pure and N-doped WO3 at reduced dimensionality (i.e., nanoscale dimensions). The results and analyses indicate that the growth temperature (Ts) has a significant effect on the microstructure of WO3 films. The grain size increases from 9 to 50 nm coupled with a phase transformation in the following sequence: amorphous (a) to monoclinic (m) to tetragonal (t) with increasing Ts (25--500°C). The nanocrystalline t-WO 3 films exhibit a strong (001) texturing. The band gap narrowing from 3.25 to 2.92 eV with grain size occurs due to quantum confinement effects. Correlated with the structure and optical properties, electrical conductivity also increases. Physical properties such as thickness, grain size, and density are also sensitive to oxygen/ nitrogen partial pressure during W-O/W-O-N sample fabrications. A direct relationship between film density and band gap is evident in nanocrystalline t-WO3 films grown at various oxygen pressures. It is observed that nitrogen

  14. Structural order effect in visible photoluminescence properties of nanocrystalline Si :H thin films

    NASA Astrophysics Data System (ADS)

    Chen, H.; Shen, W. Z.; Wei, W. S.

    2006-03-01

    We report room-temperature visible photoluminescence (PL) properties of highly ordered hydrogenated nanocrystalline Si(nc-Si :H) with good electrical performance. The PL profiles can be well reproduced by the model of Islam and Kumar [J. Appl. Phys. 93, 1753 (2003)], incorporating the effects of quantum confinement and localized surface states, as well as a log-normal crystallite size distribution. Raman, PL, and electrical results consistently reveal that improvement of structural order within nc-Si :H is beneficial to enhance the PL efficiency. Owing to adequate order, strong visible PL and high electron mobility can coexist in nc-Si :H, which may provide possibilities in Si-based optoelectronics.

  15. Growth and characterization of Li-doped ZnO thin films on nanocrystalline diamond substrates

    NASA Astrophysics Data System (ADS)

    Huang, Jian; Xia, Yiben; Wang, Linjun; Xu, Jinyong; Hu, Guang; Zhu, Xuefeng; Shi, Weimin

    2008-02-01

    Nanocrystalline diamond(NCD) films with a mean surface roughness of 23.8 nm were grown on silicon substrates in a hot filament chemical vapor deposition(HFCVD) system. Then, Zn 1-xLi xO (x=0, 0.05, 0.10, 0.15) films were deposited on these NCD films by radio-frequency(RF) reactive magnetron sputtering method. When x was 0.1, the Li-doped ZnO film had a larger resistivity more than 10 8Ω•cm obtained from Hall effect measurement. All the Zn 1-xLi xO films had a strong c-axis orientation structure determined by X-ray diffraction (XRD). The above results suggested that the Li-doped ZnO film/NCD structure prepared in this work was attractive for the application of high frequency surface acoustic wave (SAW) devices.

  16. Cohesive strength of nanocrystalline ZnO:Ga thin films deposited at room temperature

    PubMed Central

    2011-01-01

    In this study, transparent conducting nanocrystalline ZnO:Ga (GZO) films were deposited by dc magnetron sputtering at room temperature on polymers (and glass for comparison). Electrical resistivities of 8.8 × 10-4 and 2.2 × 10-3 Ω cm were obtained for films deposited on glass and polymers, respectively. The crack onset strain (COS) and the cohesive strength of the coatings were investigated by means of tensile testing. The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%. The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa. For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation. PMID:21711818

  17. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    PubMed

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. PMID:26413646

  18. Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi2(Se0.5Te0.5)5 thin films

    NASA Astrophysics Data System (ADS)

    Salunkhe, Manauti; Pawar, Nita; Patil, P. S.; Bhosale, P. N.

    2014-10-01

    Nanocrystalline MoBi2(Se0.5Te0.5)5 thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi2(Se0.5Te0.5)5 thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300-500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi2(Se0.5Te0.5)5 thin films along with photoelectrochemical properties.

  19. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

    2016-01-01

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  20. Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

    NASA Astrophysics Data System (ADS)

    Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

    2016-10-01

    In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

  1. Electronic and optical properties of nanocrystalline WO₃ thin films studied by optical spectroscopy and density functional calculations.

    PubMed

    Johansson, Malin B; Baldissera, Gustavo; Valyukh, Iryna; Persson, Clas; Arwin, Hans; Niklasson, Gunnar A; Osterlund, Lars

    2013-05-22

    The optical and electronic properties of nanocrystalline WO3 thin films prepared by reactive dc magnetron sputtering at different total pressures (Ptot) were studied by optical spectroscopy and density functional theory (DFT) calculations. Monoclinic films prepared at low Ptot show absorption in the near infrared due to polarons, which is attributed to a strained film structure. Analysis of the optical data yields band-gap energies Eg ≈ 3.1 eV, which increase with increasing Ptot by 0.1 eV, and correlate with the structural modifications of the films. The electronic structures of triclinic δ-WO3, and monoclinic γ- and ε-WO3 were calculated using the Green function with screened Coulomb interaction (GW approach), and the local density approximation. The δ-WO3 and γ-WO3 phases are found to have very similar electronic properties, with weak dispersion of the valence and conduction bands, consistent with a direct band-gap. Analysis of the joint density of states shows that the optical absorption around the band edge is composed of contributions from forbidden transitions (>3 eV) and allowed transitions (>3.8 eV). The calculations show that Eg in ε-WO3 is higher than in the δ-WO3 and γ-WO3 phases, which provides an explanation for the Ptot dependence of the optical data. PMID:23614973

  2. The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

    2016-05-01

    Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

  3. Effect of thickness on structural, optical, electrical and morphological properties of nanocrystalline CdSe thin films for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Nehra, S. P.; Lal, C.; Dhaka, M. S.

    2015-09-01

    This paper presents effect of thickness on the physical properties of thermally evaporated cadmium selenide thin films. The films of thickness 445 nm, 631 nm and 810 nm were deposited employing thermal evaporation technique on glass and ITO coated glass substrates followed by thermal annealing in air atmosphere at temperature 300 °C. The as-deposited and annealed films were subjected to the XRD, UV-Vis spectrophotometer, source meter, SEM and EDS to find the structural, optical, electrical, morphological and compositional analysis respectively. The structural analysis shows that the films have cubic phase with preferred orientation (1 1 1) and nanocrystalline nature. The structural parameters like inter-planner spacing, lattice constant, grain size, number of crystallites per unit area, internal strain, dislocation density and texture coefficient are calculated. The optical band gap is found in the range 1.69-1.84 eV and observed to decrease with thickness. The electrical resistivity is found to increase with thickness for as-deposited films and decrease for annealed films. The morphological studies show that the as-deposited and annealed films are homogeneous, smooth, fully covered and free from crystal defects like pin holes and voids. The grains in the as-deposited films are densely packed, well defined and found to be increased with thickness.

  4. RETRACTED: Ammonia-free method for synthesis of CdS nanocrystalline thin films through chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Karimi, M.; Rabiee, M.; Moztarzadeh, F.; Bodaghi, M.; Tahriri, M.

    2009-11-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief of Solid State Communications as the authors have plagiarized part of a paper that has also appeared in Current Applied Physics: Controlled synthesis, characterization and optical properties of CdS nanocrystalline thin films via chemical bath deposition (CBD) route Meysam Karimi, Mohammad Rabiee, Fathollah Moztarzadeh, Mohammadreza Tahriri and Masoud Bodaghi; Curr. Appl. Phys., 9 (2009) 1263-1268, doi: 10.1016/j.cap.2009.02.006. One of the conditions of submission of a paper for publication is that authors declare explicitly that their work is original and has not appeared in a publication elsewhere. Re-use of any data should be appropriately cited. As such this article represents a severe abuse of the scientific publishing system. The scientific community takes a very strong view on this matter and apologies are offered to readers of the journal that this was not detected during the submission process.

  5. Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

    NASA Astrophysics Data System (ADS)

    Singh, Baljinder; Singh, Janpreet; Kaur, Jagdish; Moudgil, R. K.; Tripathi, S. K.

    2016-06-01

    Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

  6. Influence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin films.

    PubMed

    Kumar, Manjeet; Kumar, Akshay; Abhyankar, A C

    2015-02-18

    For the first time, a new facile approach based on simple and inexpensive chemical spray pyrolysis (CSP) technique is used to deposit Tungsten (W) doped nanocrystalline SnO2 thin films. The textural, optical, structural and sensing properties are investigated by GAXRD, UV spectroscopy, FESEM, AFM, and home-built sensing setup. The gas sensing results indicate that, as compared to pure SnO2, 1 wt % W-doping improves sensitivity along with better response (<2 s) and recovery time (<25 s) toward NO2 gas at operating temperatures of ∼225 °C. The optimal composition of 1 wt % W-doped films exhibit lowest crystallite size of the order of ∼8-10 nm with reduced energy band gap and large roughness values of 3.82 eV and 3.01 nm, respectively. Reduction in texture coefficient along highly dense (110) planes with concomitant increase along loosely packed (200) planes is found to have prominent effect on gas sensing properties of W-doped films. PMID:25603393

  7. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    SciTech Connect

    Vargas, Mirella; Murphy, N. R.; Ramana, C. V.

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s} = 25–700 °C). HfO{sub 2} films grown at T{sub s} < 200 °C were amorphous, while those grown at T{sub s} ≥ 200 °C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (ρ) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-ρ-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and the microstructure of HfO{sub 2} films.

  8. Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

    NASA Astrophysics Data System (ADS)

    Park, Young-Sang; Son, Hyeong-Guk; Kim, Dae-Hoon; Oh, Hong-Gi; Lee, Da-Som; Kim, Min-Hye; Lim, Ki-Moo; Song, Kwang-Soup

    2016-01-01

    Nanocrystalline diamond (NCD) film surfaces were modified with fluorine or oxygen by plasma treatment in an O2 or C3F8 gas environment in order to induce wettability. The oxygenated-NCD (O-NCD) film surface was hydrophilic and the fluorinated-NCD (F-NCD) surface was hydrophobic. The efficiency of early cell adhesion, which is dependent on the wettability of the cell culture plate and necessary for the growth and proliferation of cells, was 89.62 ± 3.92% on the O-NCD film and 7.78 ± 0.77% on the F-NCD film surface after 3 h of cell culture. The wettability of the NCD film surface was artificially modified using a metal mask and plasma treatment to fabricate a micro-pattern. Four types of micro-patterns were fabricated (line, circle, mesh, and word) on the NCD film surface. We precisely arrayed the neuroblastoma cells on the micro-patterned NCD film surfaces by controlling the surface wettability and cell seeding density. The neuroblastoma cells adhered and proliferated along the O-NCD film surface.

  9. The influence of Cd doping on the microstructure and optical properties of nanocrystalline copper ferrite thin films

    SciTech Connect

    El-Hagary, M.; Matar, A.; Shaaban, E.R.; Emam-Ismail, M.

    2013-06-01

    Highlights: ► The structural and optical properties of Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of mixed Cu–Cd ferrites, Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} (x = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 0.9 and 1), were deposited by electron beam evaporation technique. The films were annealed at 450 °C for 1 h. The effect of Cd doping on the structural and optical properties of the deposited films has been investigated by using X-ray diffraction (XRD) and optical spectrophotometry. XRD patterns of the annealed films show spinal cubic structure. The lattice parameter was found to increase with the increase of cadmium concentration. The crystallite size of the films was found to vary from 8 nm to 30 nm. The optical transition was found to be direct and indirect transitions with energy gaps decrease from 2.466 (x = 0) to 2.00 (x = 1) eV and from 2.148 (x = 0) to 1.824 (x = 1) eV, respectively. The refractive index dispersion of the films was found to increase with Cd content and discussed in terms of the Wemple–DiDomenico single oscillator model.

  10. Ag Nanodots Emitters Embedded in a Nanocrystalline Thin Film Deposited on Crystalline Si Solar Cells.

    PubMed

    Park, Seungil; Ryu, Sel Gi; Ji, HyungYong; Kim, Myeong Jun; Peck, Jong Hyeon; Kim, Keunjoo

    2016-06-01

    We fabricated crystalline Si solar cells with the inclusion of various Ag nanodots into the additional emitters of nanocrystallite Si thin films. The fabricated process was carried out on the emitter surface of p-n junction for the textured p-type wafer. The Ag thin films were deposited on emitter surfaces and annealed at various temperatures. The amorphous Si layers were also deposited on the Ag annealed surfaces by hot-wire chemical vapor deposition and then the deposited layers were doped by the second n-type doping process to form an additional emitter. From the characterization, both the Ag nanodots and the deposited amorphous Si thin films strongly reduce photo-reflectances in a spectral region between 200-400 nm. After embedding Ag nanodots in nanocrystallite Si thin films, a conversion efficiency of the sample with added emitter was achieved to 15.1%, which is higher than the 14.1% of the reference sample and the 14.7% of the de-posited sample with a-Si:H thin film after the Ag annealing process. The additional nanocrystallite emitter on crystalline Si with Ag nanodots enhances cell properties. PMID:27427665

  11. Anomalous hopping conduction in nanocrystalline/amorphous composites and amorphous semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Kakalios, James; Bodurtha, Kent

    Composite nanostructured materials consisting of nanocrystals (nc) embedded within a thin film amorphous matrix can exhibit novel opto-electronic properties. Composite films are synthesized in a dual-chamber co-deposition PECVD system capable of producing nanocrystals of material A and embedding then within a thin film matrix of material B. Electronic conduction in composite thin films of hydrogenated amorphous silicon (a-Si:H) containing nc-germanium or nc-silicon inclusions, as well as in undoped a-Si:H, does not follow an Arrhenius temperature dependence, but rather is better described by an anomalous hopping expression (exp[-(To/T)3/4) , as determined from the ``reduced activation energy'' proposed by Zabrodskii and Shlimak. This temperature dependence has been observed in other thin film resistive materials, such as ultra-thin disordered films of Ag, Bi, Pb and Pd; carbon-black polymer composites; and weakly coupled Au and ZnO quantum dot arrays. There is presently no accepted theoretical understanding of this expression. The concept of a mobility edge, accepted for over four decades, appears to not be necessary to account for charge transport in amorphous semiconductors. Supported by NSF-DMR and the Minnesota Nano Center.

  12. Effect of pH on the properties of nanocrystalline CuO thin films deposited by sol-gel process

    NASA Astrophysics Data System (ADS)

    Saadat Niavol, S.; Ghodsi, F. E.

    2013-01-01

    Nanocrystalline cupric oxide thin films were prepared using the sol-gel method. Three sols with different pH were performed in order to evaluate the pH effect on the morphology and optical properties of the films. XRD pattern confirmed the nanocrystalline monoclinic CuO phase formation. The influences of pH on surface morphology of films were investigated by scanning electron microscopy (SEM). It was observed that grains size increases by increasing the pH of the sol. UV-Vis spectrum measurement showed low transparency of the films in the visible region. Optical constants such as extinction coefficient, refractive index and optical band gap were evaluated from these spectra by using the Pointwise Unconstrained Minimization Approach (PUMA). The band gap of the films varies from 2.20 to 1.98 eV for various pH of sol.

  13. Gasochromic switching of Ta and Pd-doped nanocrystalline TiO2 thin films.

    PubMed

    Domaradzki, J; Wojcieszak, D; Prociow, E; Kaczmarek, D; Winiarski, A; Szade, J

    2011-10-01

    In this work TiO2:(Ta, Pd) thin films with gasochromic properties have been described. Thin films were prepared by reactive magnetron sputtering process using mosaic Ti-Ta-Pd target. The amounts of dopants were 2.54 at.% and 12.36 at.% of Ta and Pd, respectively. The results of optical measurements performed at presence of ethanol and additional heating of the sample up to 350 degrees C have shown an abrupt change of transmission level from 80% down to 10% in VIS and in IR range. The gasochromic change was very fast. Moreover, rapid cooling (down to room temperature) in an air ambient results in stable thin film coloration. The reverse effect (bleaching) was obtained after annealing at 500 degrees C in an ambient air. PMID:22400253

  14. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  15. Study of Photo-Conductivity in Nano-Crystalline Cadmium Telluride Thin Films

    SciTech Connect

    Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-07-15

    Nano crystallite thin films of Cadmium Telluride have been grown on glass substrates by thermal evaporation under vacuum. The growth conditions to get stoichiometric films of the compound have been optimized. The effect of substrate temperature and annealing on photosensitivity has been investigated. Also the effect of deposition parameters and post deposition annealing on rise time and decay time have been studied in detail.

  16. Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

    NASA Astrophysics Data System (ADS)

    Nakamura, Hiroshi; Aoki, Masaharu

    1981-01-01

    Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

  17. Mesoporous semiconducting oxide thin films with nanocrystalline walls: Synthesis, characterization, and applications

    NASA Astrophysics Data System (ADS)

    Frindell, Karen Lynne

    Mesoporous titania thin films were synthesized using a novel modified sol-gel method, which involves the inhibition of rapid condensative polymerization of hydrolyzed titanium alkoxide using concentrated acid solutions. Lamellar, 2D-hexagonal, and cubic mesostructures were created by varying the volume fraction of the structure-directing block copolymer in the precursor solution. A mesostructured cubic semiconducting framework made up of three-dimensionally arranged anatase nanocrystallites embedded in an amorphous titania matrix was obtained by heat treating the films. Interesting absorbance and photoluminescence properties were observed including a blue shifted band gap and well-defined photoluminescence peaks owing to the high surface area and unusual surface environment of the nanocrystallites present in the framework. Selected rare earth ions were included into the walls of the mesoporous titania thin films and excitation of the mesoporous titania in its band gap resulted in sensitized photoluminescence in the visible and near infrared regions of the spectrum. The energy transfer mechanism was determined in part by evaluating which rare earth ions exhibited photoluminescence via energy transfer. Mesoporous titania thin films were incorporated into several devices including a dye sensitized solar cell. The photocurrent, photovoltage and power conversion efficiency of several iterations of solar cell devices were tested. Electrochromic devices were also fabricated and tested using pure mesoporous titania films and those doped with cerium ions. Contrary to the behavior of non-porous Ce-TiO2 thin films, the addition of cerium to mesoporous titania films caused an increased electrochromic effect. The calcination temperature was varied to correlate the evolution of the structure of the titania thin films with optical and electrochemical properties. Electron microscopy, optical absorbance, photoluminescence, lithium insertion, chronoamperometry, and

  18. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  19. Effect of different sol concentrations on the properties of nanocrystalline ZnO thin films grown on FTO substrates by sol-gel spin-coating

    NASA Astrophysics Data System (ADS)

    Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Kim, Dongwan; Park, Minju; Kim, Haeun; Lee, Wookbin; Leem, Jae-Young; Kim, Jong Su; Kim, Jin Soo

    2014-08-01

    Nanocrystalline ZnO thin films grown on fluorine-doped tinoxide (FTO) substrates were fabricated using the spin-coating method. The structural and the optical properties of the ZnO thin films prepared using different sol concentrations were investigated by using field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), photoluminescence (PL) measurements, and ultraviolet-visible (UV-vis) spectrometry. The surface morphology of the ZnO thin films, as observed in the SEM images, exhibited a mountain-chain structure. XRD results indicated that the thin films were preferentially orientated along the direction of the c-axis and that the grain size of the ZnO thin films increased with increasing sol concentration. The PL spectra showed a strong ultraviolet emission peak at 3.22 eV and a broad orange emission peak at 2.0 eV. The intensities of deep-level emission (DLE) gradually increased with increasing sol concentration from 0.4 to 1.0 M. The transmittance spectra of the ZnO thin films showed that the ZnO thin films were transparent (~85%) in the visible region and exhibited sharp absorption edges at 375 nm. Thus, The Urbach energy of ZnO thin films decreased with increasing sol concentration.

  20. Investigations of the electron field emission properties and microstructure correlation in sulfur-incorporated nanocrystalline carbon thin films

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Weiner, B. R.; Morell, G.

    2002-06-01

    Results are reported on the electron field emission properties of sulfur (S)-incorporated nanocrystalline carbon (n-C:S) thin films grown on molybdenum (Mo) substrates by hot-filament chemical vapor deposition (HFCVD) technique. In addition to the conventionally used methane (CH4) as carbon precursor with high hydrogen (H2) dilution, hydrogen sulfide-hydrogen (H2)S/H2 premix gas was used for sulfur incorporation. The field emission properties for the S-incorporated films were investigated systematically as a function of substrate temperature (TS) and sulfur concentration. Lowest turn-on field achieved was observed at around 4.0 V/mum for the n-C:S sample grown at TS of 900 degC with 500 ppm of H2S. These results are compared with those films grown without sulfur (n-C) at a particular TS. The turn-on field was found to be almost half for the S-assisted film thus demonstrating the effect of sulfur addition to the chemical vapor deposition process. An inverse relation between turn-on field (EC), growth temperature and sulfur concentration was found. The S incorporation also causes significant microstructural changes, as characterized with non-destructive complementary ex situ techniques: scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy (RS). S-assisted films show relatively smoother and finer-grained surfaces than those grown without it. These findings are discussed in terms of the dual role of sulfur in enhancing the field emission properties by controlling the sp2 C cluster size and introducing substantial structural defects through its incorporation. The in-plane correlation length (La) of sp2 C cluster was determined from the intensity ratio of the D- and G-bands I(D)/I(G) in the visible RS as a function of deposition temperature and sulfur concentration using a phenomenological model. The turn-on field was found to decrease with increasing sp2 C cluster size in general ranging from 0.8 to 1.4 nm. The films having sp2 C

  1. Mono-textured nanocrystalline thin films with pronounced stress-gradients: On the role of grain boundaries in the stress evolution

    SciTech Connect

    Daniel, R. Mitterer, C.; Jäger, E.; Sartory, B.; Todt, J.; Keckes, J.

    2014-05-28

    The origins of residual stress gradients in nanocrystalline thin films, especially the role of grain size and texture gradients, are still not fully understood. In this work, the stress evolution in exemplary nanocrystalline TiN thin films with one and two fiber texture components as well as in homogeneous amorphous SiO{sub x} films is analyzed using wafer curvature as well as laboratory and synchrotron cross-sectional nanobeam X-ray diffraction techniques. The stress evolution across the film thickness is attributed to the evolutionary nature of microstructural development at the individual growth stages. While the effect of the smooth crystallographic texture changes during growth is only of minor importance, as this does not significantly affect the dominant stress formation mechanisms, the change in the grain size accompanied by a change of the volume fraction of grain boundaries plays a decisive role in the stress development across the film thickness. This is demonstrated on the monotextured thin films, where the residual stresses scale with the apparent grain size. These findings are validated also by the investigations of stress profiles in homogeneous amorphous SiO{sub x} films exhibiting no grain boundaries.

  2. Photoinduced charge, ion & energy transfer processes at transition-metal coordination compounds anchored to mesoporous, nanocrystalline metal-oxide thin films

    NASA Astrophysics Data System (ADS)

    Ardo, Shane

    Photovoltaics provide a direct means of converting photons into useful, electric power; however traditional silicon-based technologies are too expensive for global commercialization. Dye-sensitized mesoporous semiconducting thin films, when utilized in regenerative photoelectrochemical cells, are one category of next generation photovoltaics that could eventually circumvent this issue. In fact, their architecture also affords a clear platform for implementation of a direct, solar fuel-forming system. The mechanisms involved in the myriad of molecular processes that occur in these molecular--solid-state hybrid materials are poorly understood. Thus, the overriding goal of this dissertation was to evaluate sensitized mesoporous, nanocrystalline metal-oxide thin films critically so as to elucidate mechanistic phenomena. Using transient and steady-state absorption and emission spectroscopies as well as (photo)electrochemistry, various previously unobserved processes have been identified. Chapter 2 demonstrates for the first time that the electric fields emanating from these charged thin films affect surface-anchored molecular sensitizers via a Stark effect. In most cases, further, but incomplete, ionic screening of the charged nanoparticles from the sensitizers, as non-Faradaic electrolyte redistribution, was spectroscopically inferred after rapid semiconductor charging. Chapter 3 highlights the reactivity of Co(I) coordination-compound catalysts anchored to anatase TiO2 thin-film electrodes. Visible-light excitation resulted in prompt excited-state electron injection into TiO2 while introduction of benzylbromide into the fluid solution surrounding the thin film led to a 2e--transfer, oxidative-addition reaction to Co1 forming a stable Co--benzyl product. Subsequent visible-light excitation initiated a photocatalytic cycle for C--C bond formation. Unique to the nanocrystalline thin films employed here, Chapter 4 demonstrates that traditional time-resolved polarization

  3. Interlayer coupling dependent magnetic properties in amorphous and nanocrystalline FeTaC based multilayer thin films

    NASA Astrophysics Data System (ADS)

    Singh, Akhilesh K.; Perumal, Alagarsamy

    2016-03-01

    We report systematic studies on the effects of heat treatment, the number of multilayers and temperature on interlayer coupling dependent magnetic properties in amorphous and nanocrystalline ([FeTaC(y nm)/ Ta(1 nm)] n=1-4/ FeTaC(y nm)/substrate) multilayer structured thin films fabricated directly on thermally oxidized Si substrate at ambient temperature and post annealed at different elevated temperatures (T A). As-deposited films and the films annealed at 200 °C exhibit an amorphous structure. With an increase in T A  ⩾  300 °C, the nucleation of fine nanocrystals in a residual amorphous matrix appears and a fraction of such nanocrystals increases with increasing T A. The changes in the microstructure modify the interlayer coupling between FeTaC ferromagnetic layers due to the release of stress accumulated during film deposition and enhanced interface roughness with increasing T A. As a result, a change in the shape of the magnetic hysteresis (M-H) loop and multistep magnetization reversal process, where the number of steps in the M-H loop, their nature and positions strongly depend on the number of multilayers, T A and temperature, were observed. As-deposited films and the films annealed at 200 °C exhibit multistep magnetization reversal behavior only at temperatures below 80 K, but the films annealed above 200 °C show such multistep reversal behavior even at 300 K. This causes an unusual variation of temperature-dependent coercivity in these multilayer films having different microstructures. Furthermore, the coercivity due to individual or collective switching between FeTaC layers in these films varies unusually and is substantially influenced by the bottom FeTaC layer grown directly on the substrate. The observed results were discussed on the basis of variation in interlayer coupling with the multilayer structure, post annealing conditions and temperature. This provided evidence of controlling the soft magnetic properties and

  4. Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

    SciTech Connect

    Agawane, G.L.; Shin, Seung Wook; Vanalakar, S.A.; Moholkar, A.V.; Gurav, K.V.; Suryawanshi, M.P.; Lee, Jeong Yong; Yun, Jae Ho; Kim, Jin Hyeok

    2014-07-01

    Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(S + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.

  5. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  6. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    DOE PAGESBeta

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilizedmore » grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less

  7. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, N. Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-14

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E{sub a} = 21.6 kJ/mol and A{sub o} = 2.3 × 10{sup −17} m{sup 2}/s for Au-1 vol. % ZnO and E{sub a} = 12.7 kJ/mol and A{sub o} = 3.1 × 10{sup −18} m{sup 2}/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  8. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Argibay, N.; Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-01

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea = 12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  9. Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

    NASA Astrophysics Data System (ADS)

    Bodurtha, Kent Edward

    Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si:H) stems in part from its potential for technical applications in thin film transistors and solar cells. Previous reports have shown promising results for films of a-Si:H with embedded silicon nanocrystals, with the goal of combining the low cost, large area benefits of hydrogenated amorphous silicon with the superior electronic characteristics of crystalline material. These materials are fabricated in a dual-chamber plasma-enhanced chemical vapor deposition system in which the nanocrystals are produced separately from the amorphous film, providing the flexibility to independently tune the growth parameters of each phase; however, electronic transport through these and other similar materials is not well understood. This thesis reports the synthesis and characterization of thin films composed of germanium nanocrystals embedded in a-Si:H. The results presented here describe detailed measurements of the conductivity, photoconductivity and thermopower which reveal a transition from conduction through the a-Si:H for samples with few germanium nanocrystals, to conduction through the nanocrystal phase as the germanium crystal fraction XGe is increased. These films display reduced photosensitivity as XGe is increased, but an unexpected increase in the dark conductivity is found in samples with X Ge > 5% after long light exposures. Detailed studies of the conductivity temperature dependence in these samples exposes a subtle but consistent deviation from the standard Arrhenius expression; the same departure is found in samples of pure a-Si:H; a theoretical model is presented which accurately describes the actual conductivity temperature dependence.

  10. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    NASA Astrophysics Data System (ADS)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  11. Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition

    PubMed Central

    2014-01-01

    Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (−0.1, −0.3, −0.5, −0.7, and −0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV–vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission. PMID:24872805

  12. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics.

    PubMed

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-12-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm(-2). Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m(-1) K(-1). The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications. PMID:26510890

  13. Determination of the Origin of Crystal Orientation for Nanocrystalline Bismuth Telluride-Based Thin Films Prepared by Use of the Flash Evaporation Method

    NASA Astrophysics Data System (ADS)

    Takashiri, M.; Tanaka, S.; Miyazaki, K.

    2014-06-01

    We have investigated the origin of crystal orientation for nanocrystalline bismuth telluride-based thin films. Thin films of p-type bismuth telluride antimony (Bi-Te-Sb) and n-type bismuth telluride selenide (Bi-Te-Se) were fabricated by a flash evaporation method, with exactly the same deposition conditions except for the elemental composition of the starting powders. For p-type Bi-Te-Sb thin films the main x-ray diffraction (XRD) peaks were from the c-axis (Σ{00l}/Σ{ hkl} = 0.88) whereas n-type Bi-Te-Se thin films were randomly oriented (Σ{00l}/Σ{ hkl} = 0.40). Crystal orientation, crystallinity, and crystallite size were improved for both types of thin film by sintering. For p-type Bi-Te-Sb thin films, especially, high-quality structures were obtained compared with those of n-type Bi-Te-Se thin films. We also estimated the thermoelectric properties of the as-grown and sintered thin films. The power factor was enhanced by sintering; maximum values were 34.9 μW/cm K2 for p-type Bi-Te-Sb thin films at a sintering temperature of 300°C and 23.9 μW/cm K2 for n-type Bi-Te-Se thin films at a sintering temperature of 350°C. The exact mechanisms of film growth are not yet clear but we deduce the crystal orientation originates from the size of nano-clusters generated on the tungsten boat during flash evaporation.

  14. Thermal and photochemical reactions of methanol on nanocrystalline anatase TiO2 thin films.

    PubMed

    Bennett, David A; Cargnello, Matteo; Gordon, Thomas R; Murray, Christopher B; Vohs, John M

    2015-07-14

    The catalytic and photo-catalytic activity of well-defined anatase TiO2 nanocrystals for the partial oxidation of methanol was investigated using temperature-programmed desorption (TPD) in ultra-high vacuum in order to determine how crystallite size and shape affect reactivity. The TiO2 films used in this study were prepared from well-defined TiO2 nanocrystals synthesized by colloidal methods. These nanocrystals had a truncated bi-pyramidal shape which exposes primarily (101) and to a lesser extent (001) surfaces and ranged in size from 10 to 25 nm. Two distinct regimes of reactivity were investigated, namely in the dark and under UV light illumination. In the dark, methanol adsorbed dissociatively on the (001) planes and only molecularly on the (101) surfaces. Dissociated methoxy groups on the (001) surfaces coupled to produce dimethyl ether, suggesting the presence of fourfold coordinate Ti cations. Under UV light illumination, the nanocrystals were additionally found to be active for the photo-catalytic oxidation of methanol to methyl formate. On the (101) surfaces, this reaction proceeded in a stepwise photocatalytic pathway involving dehydrogenation of methanol to form methoxy groups and then formaldehyde, followed by coupling of these latter two species to form methyl formate. The (001) surfaces were also found to be photo-catalytically active but surface methoxy groups could be produced thermally and the reaction proceeds only to formaldehyde in the absence of molecularly adsorbed methanol. The overall photocatalytic activity of the nanocrystals was also was found to increase with increasing crystallite size. The results of this study show that thin films of well-defined nanocrystals are excellent model systems that can be used to help bridge the materials gap between studies of single crystal surfaces and high surface area polycrystalline catalysts. PMID:26073428

  15. A size-dependent structural evolution of ZnS nanoparticles

    PubMed Central

    Khalkhali, Mohammad; Liu, Qingxia; Zeng, Hongbo; Zhang, Hao

    2015-01-01

    Recently, ZnS quantum dots have attracted a lot of attention since they can be a suitable alternative for cadmium-based quantum dots, which are known to be highly carcinogenic for living systems. However, the structural stability of nanocrystalline ZnS seems to be a challenging issue since ZnS nanoparticles have the potential to undergo uncontrolled structural change at room temperature. Using the molecular dynamics technique, we have studied the structural evolution of 1 to 5 nm freestanding ZnS nanoparticles with zinc-blende and wurtzite crystal structures. Simulation results revealed that relaxed configurations of ZnS nanoparticles larger than 3 nm consist of three regions: a) a crystalline core, b) a distorted network of 4-coordinated atoms environing the crystalline core, and c) a surface structure made entirely of 3-coordinated atoms. Decreasing the size of ZnS nanoparticle to 2 nm will cause the crystalline core to disappear. Further reducing the size will cause all of the atoms to become 3-coordinated. Dipole moments of zinc-blende and wurtzite nanoparticles are in the same range when the nanoparticles are smaller than 3 nm. Increasing the size makes dipole moments converge to the bulk values. This makes zinc-blende and wurtzite nanoparticles less and more polar, respectively. PMID:26381583

  16. New co-spray way to synthesize high quality ZnS films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Boukerika, A.; Lahreche, A.; Ynineb, F.

    2013-11-01

    In the present study, we report for the first time the synthesis of ZnS films using co-spray method, in which the reactants were mixed in the vapor state contrary to that seen in previous spray configurations. In order to obtain the optimum conditions for growing high quality ZnS thin films related to this approach, a series of samples with different Zn:S atomic ratios were investigated. X-ray diffraction (XRD) analysis indicated that both solid state and phase formation were strongly dependent on Zn:S atomic ratio. In the absence of sulfur element, pure ZnO phase showing hexagonal wurtzite structure with (0 0 2) preferential orientation was obtained. When one eighth of sulfur was implicated, the (0 0 2) diffraction peak of ZnO was broadened and displaced toward lower angles. Once one quarter of sulfur was involved, no discernible diffraction peaks could be seen. Films deposited using solutions with Zn:S ratio of 1:1/2, 1:1 and 1:2 have pure ZnS phase showing hexagonal wurtzite structure with a strong preferential orientation. Near stoichiometric ZnS films were achieved with Zn:S atomic ratio close to 1:1. All films have high transmittance of about 80% in the visible region.

  17. Influence of γ-irradiation on optical parameters of electron beam evaporated ZnSe1-xTex nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Emam-Ismail, Mohamed; El-Hagary, Magdy; Ramadan, Essam; Matar, Ahmed; El-Taher, Atef

    2014-01-01

    In the present paper, we reported the effect of γ-irradiation with different doses (100-300 kGy) on the optical parameters of nanocrystalline ZnSe1-xTex (x=0.0, 0.2, 0.5, 0.7, 1.0) thin films. In the wavelength range 400-2500 nm, the optical parameters of the as-deposited and γ-irradiated were extracted from transmission spectra using the Swanepoel method. It was found that the refractive index of the investigated films increases with increasing the doses of γ-radiation. Such post-irradiation increase in the refractive index was attributed to the increase of the density of the investigated films with irradiation doses due to structure transformation induced by thermal effects during irradiation. In addition, the refractive index dispersions of both as-deposited and γ-irradiated of nanocrystalline ZnSe0.8Te0.2 films are found to follow the single oscillator model. The calculated single oscillator parameters; oscillator strength Ed, static refractive index no, increased after irradiation while the oscillator energy Eo, reduced after irradiation. The absorption coefficient was found to increase with the increase of the doses of γ-radiation. Furthermore, the obtained optical energy gap of nanocrystalline ZnSe1-xTex films was found to decrease with increasing the doses of the γ-radiation which is attributed to the increase of the telluride (Te) atoms or defects after irradiation. This is confirmed by the decrease in the Urbach energy Ee after radiation. The γ-irradiation stimulated increase in the absorption coefficient and change in the optical parameters, which can be utilized for industrial dosimetric and detector purposes.

  18. Photoacoustic and Photoluminescence Characterization of Passivated and Unpassivated Mn-Doped ZnS Nanoparticles

    NASA Astrophysics Data System (ADS)

    Cruz, Almira Briones; Shen, Qing; Toyoda, Taro

    2005-06-01

    In this study, passivated and unpassivated nanocrystalline ZnS with varying Mn2+ concentrations (ZnS:Mn) were synthesized and their photoacoustic (PA) and photoluminescence (PL) characteristics were studied. The PA intensity peak for the nanocrystalline ZnS was found to be blue-shifted compared with that for the bulk material due to quantum confinement effects. The difference of the PA signals of doped ZnS and undoped ZnS yielded the Mn2+ optical absorption spectra. The intensity of the PA peak increased linearly with Mn concentration. The PL spectra showed a peak position at 2.08 eV corresponding to the d-d transition of Mn2+. For the unpassivated sample, a decrease in the PL intensities for higher Mn concentrations was observed. This could be attributed to concentration quenching. Addition of acrylic acid as a passivator led to an increase in PL intensity for all Mn concentrations and prevented the decrease in the PL intensity for higher Mn concentrations. These could be attributed to the surface passivation, which reduces the nonradiative recombination probabilities, thus increasing PL intensities.

  19. Synthesis of nanocrystalline Cu{sub 2}ZnSnS{sub 4} thin films grown by the spray-pyrolysis technique

    SciTech Connect

    Chandel, Tarun Singh, Joginder; Rajaram, P.

    2015-08-28

    Spray pyrolysis was used to deposit Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  20. Growth, electrical, and optical properties of nanocrystalline VO{sub 2} (011) thin films prepared by thermal oxidation of magnetron sputtered vanadium films

    SciTech Connect

    Luo Zhenfei; Wu Zhiming; Xu Xiangdong; Wang Tao; Jiang Yadong

    2010-07-15

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were prepared on glass substrates at different deposition temperatures by oxidizing sputtered vanadium films. Atomic force microscope, x-ray diffraction, and Raman scattering were employed to characterize the films. It was confirmed that low deposition temperature resulted in improving oxygen atom diffusion and VO{sub 2} nanograin growth in the thermal oxidation process. Investigation of the electrical properties revealed that the amplitude of semiconductor-metal transition and transition temperature decreased, whereas the Hall mobility and carrier concentration increased as the deposition temperature elevated. Optical investigations were carried out in the ultraviolet-visible-near-infrared region. Narrow optical band gaps were observed in these films.

  1. Deposition of nanocrystalline thin TiO2 films for MOS capacitors using Sol-Gel spin method with Pt and Al top electrodes

    NASA Astrophysics Data System (ADS)

    Rathee, Davinder; Kumar, Mukesh; Arya, Sandeep K.

    2012-10-01

    Nanocrystalline titanium dioxide (TiO2) films were deposited by Sol-Gel spin coating method on well clean P<1 0 0> Si substrate. Titanium isoproxide Ti(OC3H7O2)4 (TIP) was used as the Titania precursor. The thickness, composition, and surface morphology of the thin films were characterized using Stylus profilometer, X-ray diffraction (XRD), Field-Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). The crystallite sizes of the TiO2 grains were measured from the typical diffraction peaks and were found to be approximately 23-54 nm. The XRD pattern and Raman spectrum analysis of the deposited film confirmed the polymorphism nature of TiO2 thin films. After annealing at high temperature; the phase transition, improvement in crystallinity, structure and property of the films were being observed. The six Raman peaks were analyzed at 145 cm-1, 199 cm-1, 397 cm-1, 516 cm-1 (doublet) and 637 cm-1 corresponding to active mode of anatase phase. Capacitance-Voltage (C-V) measurement analysis was performed to obtain various devices and process parameters. Metal Oxide Semiconductor (MOS) capacitors with Pt and Al as the top electrode were fabricated to explore electrical characteristics. The refractive index by ellipsometry was found 2.36 and dielectric constant was calculated as 58. In this study, the comparison of the leakage current for TiO2 thin films fabricated by various methods has also been reported.

  2. Some physical investigations on ZnS 1- xSe x films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme

    NASA Astrophysics Data System (ADS)

    Fridjine, S.; Touihri, S.; Boubaker, K.; Amlouk, M.

    2010-01-01

    ZnS 1- xSe x thin films have been grown by selenization process, applied to ZnS sprayed thin films deposited on Pyrex glass substrates at 550 °C. The crystal structure and surface morphology were investigated by the XRD technique and by the atomic force microscopy. This structural study shows that selenium-free ( x=0) ZnS thin films, prepared at substrate temperature TS=450 °C, were well crystallized in cubic structure and oriented preferentially along (1 1 1) direction. The thermal and mechanical properties were also investigated using a photothermal protocol along with Vickers hardness measurements. On the other hand, the analyze of the transmittance T( λ) and the reflectance R( λ), optical measurements of these films depicts a decrease in the band gap energy value Eg with an increase in Se content ( x). Indeed, Eg values vary from 3.6 to 3.1 eV.

  3. Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

    NASA Astrophysics Data System (ADS)

    Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

    2015-03-01

    We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

  4. The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

    NASA Astrophysics Data System (ADS)

    Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

    2016-04-01

    Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

  5. Synthesis of Nanocrystalline SnOx (x = 1–2) Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

    PubMed Central

    Ebrahimiasl, Saeideh; Yunus, Wan Md. Zin Wan; Kassim, Anuar; Zainal, Zulkarnain

    2011-01-01

    Nanocrystalline SnOx (x = 1–2) thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light. PMID:22163690

  6. A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

    SciTech Connect

    Mukherjee, Nillohit; Sinha, Arijit; Khan, Gobinda Gopal; Chandra, Debraj; Bhaumik, Asim; Mondal, Anup

    2011-01-15

    We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH{sub 3}COO){sub 2}, SC(NH{sub 2}){sub 2} and N(CH{sub 2}CH{sub 2}OH){sub 3} [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.

  7. Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Tan, Hairen; Psomadaki, Efthymia; Isabella, Olindo; Fischer, Marinus; Babal, Pavel; Vasudevan, Ravi; Zeman, Miro; Smets, Arno H. M.

    2013-10-01

    Micro-textures with large opening angles and smooth U-shape are applied to nanocrystalline silicon (nc-Si:H) solar cells. The micro-textured substrates result in higher open-circuit-voltage (Voc) and fill-factor (FF) than nano-textured substrates. For thick solar cells, high Voc and FF are maintained. Particularly, the Voc only drops from 564 to 541 mV as solar cell thickness increases from 1 to 5 μm. The improvement in electrical performance of solar cells is ascribed to the growth of dense nc-Si:H layers free from defective filaments on micro-textured substrates. Thereby, micromorph tandem solar cells with an initial efficiency of 13.3%, Voc = 1.464 V, and FF = 0.759 are obtained.

  8. Magnetism in undoped ZnS studied from density functional theory

    SciTech Connect

    Xiao, Wen-Zhi E-mail: llwang@hun.edu.cn; Rong, Qing-Yan; Xiao, Gang; Wang, Ling-ling E-mail: llwang@hun.edu.cn; Meng, Bo

    2014-06-07

    The magnetic property induced by the native defects in ZnS bulk, thin film, and quantum dots are investigated comprehensively based on density functional theory within the generalized gradient approximation + Hubbard U (GGA + U) approach. We find the origin of magnetism is closely related to the introduction of hole into ZnS systems. The relative localization of S-3p orbitals is another key to resulting in unpaired p-electron, due to Hund's rule. For almost all the ZnS systems under study, the magnetic moment arises from the S-dangling bonds generated by Zn vacancies. The charge-neutral Zn vacancy, Zn vacancy in 1− charge sate, and S vacancy in the 1+ charge sate produce a local magnetic moment of 2.0, 1.0, and 1.0 μ{sub B}, respectively. The Zn vacancy in the neutral and 1− charge sates are the important cause for the ferromagnetism in ZnS bulk, with a Curie temperature (T{sub C}) above room temperature. For ZnS thin film with clean (111) surfaces, the spins on each surface are ferromagnetically coupled but antiferromagnetically coupled between two surfaces, which is attributable to the internal electric field between the two polar (111) surfaces of the thin film. Only surface Zn vacancies can yield local magnetic moment for ZnS thin film and quantum dot, which is ascribed to the surface effect. Interactions between magnetic moments on S-3p states induced by hole-doping are responsible for the ferromagnetism observed experimentally in various ZnS samples.

  9. Effect of the nanocrystalline structure type on the optical properties of TiO2:Nd (1 at.%) thin films

    NASA Astrophysics Data System (ADS)

    Mazur, Michal; Wojcieszak, Damian; Kaczmarek, Danuta; Domaradzki, Jaroslaw; Zatryb, Grzegorz; Misiewicz, Jan; Morgiel, Jerzy

    2015-04-01

    Titanium dioxide thin films, each doped with the same amount of neodymium (1 at.%) were deposited by Low Pressure Hot Target Reactive Sputtering and High Energy Reactive Magnetron Sputtering processes in order to obtain anatase and rutile thin film structures respectively. The microstructure and phase composition were analyzed using the transmission electron microscopy method including high resolution electron microscopy imaging. The measurements of the optical properties showed, that both prepared thin films were transparent in the visible light range and had a low extinction coefficient of ca. 3 ṡ 10-3. The thin film with the anatase structure had a lower cut-off wavelength and refractive index and a higher value of optical energy band gap as-compared to the TiO2:Nd coating with the rutile structure. Simultaneously, more efficient photoluminescence emission was observed for the rutile thin films.

  10. Microscopic model for exchange bias from grain-boundary disorder in a ferromagnet/antiferromagnet thin film with a nanocrystalline microstructure

    SciTech Connect

    Cortie, D. L.; Biternas, A. G.; Chantrell, R. W.; Wang, X. L.; Klose, F.

    2014-07-21

    Monte Carlo spin simulations were coupled to a Voronoi microstructure-generator to predict the magnitude and behavior of exchange bias in a ferromagnet/antiferromagnet (AF) thin film bilayer with a nanocrystalline microstructure. Our model accounts for the effects of irregular grain-shapes, finite-sized particles, and the possible presence of local random-fields originating from the antiferromagnet's grain-boundary regions. As the grain-boundary represents a crystal-structure distortion, we model the local effect on the exchange constants in the Gaussian approximation which can cause regions resembling a spin glass confined to an unusual 2D topology. Although an ensemble of completely disconnected AF grains isolated by non-magnetic barriers provides a small exchange bias, the introduction of a spin-glass network at the boundaries causes a four-fold enhancement in the magnitude of the loop-shift. This implies the importance of local grain-boundary behavior in defect-engineered antiferromagnets.

  11. Evidence of quantum correction to conductivity and variable range hopping conduction in nano-crystalline Cu{sub 3}N thin film

    SciTech Connect

    Sahoo, Guruprasad Jain, Mahaveer K.

    2015-10-15

    We have investigated the temperature dependent carrier transport properties of nano-crystalline copper nitride thin films synthesized by modified activated reactive evaporation. The films, prepared in a Cu-rich growth condition are found to be highly disordered and the carrier transport in these films is mainly attributed to the impurity band conduction. We have observed that no single conduction mechanism is appropriate to elucidate the carrier transport in the entire temperature range of 20 – 300 K. Therefore, we have employed different conduction mechanisms in different temperature regimes. The carrier transport of the films in the low temperature regime (20 – 150 K) has been interpreted by implementing quantum correction to the conductivity. In the high temperature regime (200 – 300 K), the conduction mechanism has been successfully analyzed on the basis of Mott’s variable range hopping mechanism. Furthermore, it can be predicted that copper ions present at the surface of the crystallites are responsible for the hopping conduction mechanism.

  12. Anomalous behavior of B1g mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO) thin films

    NASA Astrophysics Data System (ADS)

    Gautam, Subodh K.; Gautam, Naina; Singh, R. G.; Ojha, S.; Shukla, D. K.; Singh, Fouran

    2015-12-01

    The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO) thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO2 lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb+5 in the TiO2 lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR) spectra of films with small size crystallites shows stiffening of about 4 cm-1 for the Eg(1) mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B1g mode exhibits a large anomalous softening of 20 cm-1 with asymmetrical broadening; which was not reported for the case of pure TiO2 crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb5+ doping induced reduction of Ti4+ ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS) and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

  13. Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry.

    PubMed

    Molnár, Gábor Y; Shenouda, Shenouda S; Katona, Gábor L; Langer, Gábor A; Beke, Dezső L

    2016-01-01

    Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd). It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself. PMID:27335738

  14. Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

    PubMed Central

    Molnár, Gábor Y; Shenouda, Shenouda S; Katona, Gábor L; Langer, Gábor A

    2016-01-01

    Summary Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd). It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself. PMID:27335738

  15. Catastrophic vs gradual collapse of thin-walled nanocrystalline Ni hollow cylinders as building blocks of microlattice structures.

    PubMed

    Lian, Jie; Jang, Dongchan; Valdevit, Lorenzo; Schaedler, Tobias A; Jacobsen, Alan J; B Carter, William; Greer, Julia R

    2011-10-12

    Lightweight yet stiff and strong lattice structures are attractive for various engineering applications, such as cores of sandwich shells and components designed for impact mitigation. Recent breakthroughs in manufacturing enable efficient fabrication of hierarchically architected microlattices, with dimensional control spanning seven orders of magnitude in length scale. These materials have the potential to exploit desirable nanoscale-size effects in a macroscopic structure, as long as their mechanical behavior at each appropriate scale - nano, micro, and macro levels - is properly understood. In this letter, we report the nanomechanical response of individual microlattice members. We show that hollow nanocrystalline Ni cylinders differing only in wall thicknesses, 500 and 150 nm, exhibit strikingly different collapse modes: the 500 nm sample collapses in a brittle manner, via a single strain burst, while the 150 nm sample shows a gradual collapse, via a series of small and discrete strain bursts. Further, compressive strength in 150 nm sample is 99.2% lower than predicted by shell buckling theory, likely due to localized buckling and fracture events observed during in situ compression experiments. We attribute this difference to the size-induced transition in deformation behavior, unique to nanoscale, and discuss it in the framework of "size effects" in crystalline strength. PMID:21851060

  16. The Effect of Mn Incorporation on the Structural, Morphological, Optical, and Electrical Features of Nanocrystalline ZnO Thin Films Prepared by Chemical Spray Pyrolysis Technique

    NASA Astrophysics Data System (ADS)

    Yilmaz, Mehmet; Aydoğan, Şakir

    2015-06-01

    Un-doped and Mn-doped ZnO nanocrystalline thin films and n-ZnO /n-Si heterojunction have been prepared by chemical spray pyrolysis technique. The microstructure, morphology, optical, and electrical properties have been studied. The X-ray analyses have revealed that all films are in single phase and have wurtzite structure. Besides, it has been indicated that there are not any secondary phases. The optical properties have been evaluated by UV-Vis measurement. It has shown that band gap decreases with Mn incorporation from 3.29 to 3.19 eV. Schottky diode applications of the films have been performed by evaporation of Au on pure and Mn-doped ZnO films. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of the n-ZnO /n-Si heterojunction indicate good diode characteristic and the barrier heights have been calculated as 0.89 and 0.79 eV for un-doped and Mn 1 pct-doped ZnO films. Besides, schematic cross section of the Au/ n-ZnO/ n-Si/Al device and energy band diagram of n-ZnO/ n-Si heterojunction has been illustrated to clarify the transport mechanism. All results suggest that the characteristic properties of the ZnO thin films can be adjustable with the Mn doping and Al/ n-Si/ n-ZnO/Au diode can be used for UV detection application in photonic devices.

  17. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2014-10-22

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant. PMID:25459700

  18. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS = 500 °C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the Sisbnd C network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the Sisbnd C bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  19. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing.

    PubMed

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-19

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson-Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm(-1) K(-2)), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance. PMID:27389820

  20. Structural, optical, and transport properties of nanocrystalline bismuth telluride thin films treated with homogeneous electron beam irradiation and thermal annealing

    NASA Astrophysics Data System (ADS)

    Takashiri, Masayuki; Asai, Yuki; Yamauchi, Kazuki

    2016-08-01

    We investigated the effects of homogeneous electron beam (EB) irradiation and thermal annealing treatments on the structural, optical, and transport properties of bismuth telluride thin films. Bismuth telluride thin films were prepared by an RF magnetron sputtering method at room temperature. After deposition, the films were treated with homogeneous EB irradiation, thermal annealing, or a combination of both the treatments (two-step treatment). We employed Williamson–Hall analysis for separating the strain contribution from the crystallite domain contribution in the x-ray diffraction data of the films. We found that strain was induced in the thin films by EB irradiation and was relieved by thermal annealing. The crystal orientation along c-axis was significantly enhanced by the two-step treatment. Scanning electron microscopy indicated the melting and aggregation of nano-sized grains on the film surface by the two-step treatment. Optical analysis indicated that the interband transition of all the thin films was possibly of the indirect type, and that thermal annealing and two-step treatment methods increased the band gap of the films due to relaxation of the strain. Thermoelectric performance was significantly improved by the two-step treatment. The power factor reached a value of 17.2 μW (cm‑1 K‑2), approximately 10 times higher than that of the as-deposited thin films. We conclude that improving the crystal orientation and relaxing the strain resulted in enhanced thermoelectric performance.

  1. Transition from a nanocrystalline phase to an amorphous phase in In-Si-O thin films: The correlation between the microstructure and the optical properties

    SciTech Connect

    Park, Jun-Woo; So, Hyeon Seob; Lee, Hosun; Lee, Hye-Min; Kim, Hyo-Joong; Kim, Han-Ki

    2015-04-21

    We investigated the structural and optical properties of In-Si-O thin films as the phase abruptly changes from nanocrystalline (nc) to amorphous (a) with increasing Si content. In-Si-O thin films were deposited on Si substrate using a co-sputtering deposition method. The RF power of the In{sub 2}O{sub 3} target was fixed at 100 W, while the power applied to the SiO{sub 2} target was varied between 0 W and 60 W. At the Si = 2.8 at. %, i.e., at the onset of amorphous phase, the optical properties, including the dielectric functions, optical gap energies, and phonon modes, changed abruptly which were triggered by changes in the crystallinity and surface morphology. X-ray diffraction (XRD) spectra showed crystalline (c-) In{sub 2}O{sub 3}-like peaks below Si = 2.2%. Additionally, a broad peak associated with an amorphous (a-) In{sub 2}O{sub 3} phase appeared above 2.8%. However, the Raman spectra of In-Si-O showed very weak peaks associated with c-In{sub 2}O{sub 3} below 2.2%, and then showed a strong Raman peak associated with a-In-Si-O above 2.8%. X-ray photoelectron spectroscopy measurements showed that oxygen vacancy-related peak intensities increased abruptly above Si = 2.8%. The contrasting results of XRD and Raman measurements can be explained as follows: first, the large enhancement in Drude tails in the a-In-Si-O phase was caused by Si-induced amorphization and a large increase in the density of oxygen vacancies in the In-Si-O thin films. Second, the apparently drastic increase of the Raman peak intensity near 364 cm{sup −1} (for amorphous phase, i.e., above Si = 2.8%) is attributed to a disorder-activated infrared mode caused by both the amorphization and the increase in the oxygen vacancy density in In-Si-O thin films.

  2. Nanocrystalline biphasic resorbable calcium phosphate (HAp/β-TCP) thin film prepared by electron beam evaporation technique

    NASA Astrophysics Data System (ADS)

    Elayaraja, K.; Chandra, V. Sarath; Joshy, M. I. Ahymah; Suganthi, R. V.; Asokan, K.; Kalkura, S. Narayana

    2013-06-01

    Biphasic calcium phosphate (BCP) thin film having resorbable β-tricalcium phosphate (β-TCP) and non-resorbable hydroxyapatite (HAp) phases having enhanced bioactivity was synthesized by electron beam evaporation technique. Nanosized BCP was deposited as a layer (500 nm) on (0 0 1) silicon substrate by electron beam evaporation and crystalline phase of samples were found to improve on annealing at 700 °C. Uniform deposition of calcium phosphate on silicon substrate was verified from elemental mapping using scanning electron microscope (SEM-EDX). Annealing of the samples led to a decrease in surface roughness, hydrophobicity and dissolution of the coating layer. Amoxicillin loaded thin films exhibited significant bacterial resistance. In addition, BCP thin films did not exhibit any cytotoxicity. Antibiotics incorporated BCP coated implants might prevent the post-surgical infections and could promote bone-bonding of orthopedic devices.

  3. Effect of lead ion concentration on the structural and optical properties of nano-crystalline PbS thin films

    NASA Astrophysics Data System (ADS)

    Zaman, S.; Mehmood, S. K.; Mansoor, M.; Asim, M. M.

    2014-06-01

    PbS thin films have received considerable attention because of their potential applications in opto-electronics applications. Spontaneous reaction of lead acetate and thiourea in aqueous hydrazine hydrate has been used for depositing PbS thin films on glass substrates. Structural and optical properties of PbS thin films are greatly influenced by the morality of the reactants and crystal defects in the lattice. Our work focuses on the variation in lead ion concentration and its effect on the structural and optical properties of PbS thin films. The deposited films were analyzed using XRD, SEM, spectrophotometer and dark resistance measurement. XRD patterns indicated the formation of major phase of nano crystalline PbS with minor presence of lead oxide phase. We also noticed that peak intensity ratio of I111/I200 varied by changing the Pb ion concentration. The film thickness and dark resistance increased whereas optical band gap decreased with the decreasing Pb ion concentration. SEM scans showed that the grain size is less than 100 nm and is not affected by varying Pb ion concentration.

  4. Influencing the structural, microstructural and optical properties of PbS nanocrystalline thin films by Mg2+ doping

    NASA Astrophysics Data System (ADS)

    Gassoumi, Abdelaziz; Alleg, Safia; Kamoun-Turki, Najoua

    2016-07-01

    The aim of the current work is study the effect of Mg2+ doping (0-4%) on lead sulfide (PbS) thin films prepared using a simplest and cost effective chemical bath deposition (CBD) technique on glass substrates at ambient temperature and pressure. The effect of Mg2+ content on structural, morphological and optical properties of PbS thin films was studied. Powder X-ray diffraction and Atomic Force Microscopic results showed that all the deposited thin films exhibits both nanostructured and polycrystalline nature with cubic structure. The remarkable effect on optical transmittance and band gap was observed due to Mg2+ doping for all the films. The optical energy band gap values were found to enhance with increasing the Mg2+ content in PbS thin films. Further, the refractive index was calculated and a relationship with energy band gap was investigated and also the high frequency dielectric constant (ε∞) was determined using the energy band gap values as a function of the Mg2+ content.

  5. Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

    PubMed Central

    Grausova, Lubica; Kromka, Alexander; Burdikova, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacik, Jiri; Haenen, Ken; Lisa, Vera; Bacakova, Lucie

    2011-01-01

    Intrinsic nanocrystalline diamond (NCD) films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like), the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH4:H2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films) to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively). The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000±14,000 and 152,000±10,000 cells/cm2, respectively, compared to 113,000±10,000 cells/cm2 on undoped NCD films). As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells. PMID:21695172

  6. Influence of metal precursor on the synthesis and magnetic properties of nanocrystalline SrFe12O19 thin films

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Seyyed Ebrahimi, S. A.

    2013-10-01

    The effects of metal precursor on the structure and magnetic properties of strontium hexaferrite (SrFe12O19) thin films synthesized by polymeric precursor method have been investigated. Fourier transform infrared, thermal analyses, X-ray diffraction, scanning electron microscopy and vibrating sample magnetometer techniques were applied to evaluate the microstructure, composition, crystallite size and magnetic properties of the SrFe12O19 thin films. The films synthesized from metal nitrate precursor offered the single phase SrFe12O19 with the crystallite size of 42 nm and isotropically magnetic properties of Ms=267 emu/cm3, Mr=134 emu/cm3, and Hc=4790 Oe after calcination at 800 °C. The films obtained from metal hydroxide and metal chloride precursors exhibited higher coercivities, 6063 and 5047 Oe, respectively, due to the smaller particle size; however, they were not single phase strontium hexaferrite.

  7. Structure and magnetic properties of nanocrystalline SrFe12O19 thin films synthesized by the Pechini method

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ebrahimi, S. A. Seyyed

    2013-09-01

    Strontium hexaferrite (SrFe12O19) thin films have been synthesized by the Pechini method. The precursor solutions were prepared with different basic agents such as ammonia, trimethylamine, ethanolamine, diethanolamine. Fourier transform infrared and thermal analyses were conducted to determine the chelated species and phase evolution, respectively. The composition, crystallite size, microstructure and magnetic properties of the SrFe12O19 thin films were evaluated by X-ray diffraction, scanning electron microscope and vibrating sample magnetometer. The film prepared by using ammonia agent offered the largest coercivity of Hc=4790 Oe, while the strontium hexaferrite film prepared with using trimethylamine basic agent exhibited the largest magnetization of Ms=276 emu/cm3, with isotropic magnetic behavior.

  8. Study of the photocatalytic activity of nanocrystalline S, N-codoped TiO2 thin films and powders under visible and sun light irradiation

    NASA Astrophysics Data System (ADS)

    Behpour, Mohsen; Atouf, Vajiheh

    2012-06-01

    Homogeneous and transparent sulfur and nitrogen (S, N)-codoped TiO2 nanocrystalline thin films were deposited on glass substrates by sol gel dip coating method using thiourea (Tu) as a source of sulfur and nitrogen. The surface structure of the films was modified by addition of different concentrations of polyethylene glycol (PEG) into the TiO2 sol. The equal powders of pure and modified TiO2 were also prepared to compare of their photocatalytic activity with films. The films and powders were characterized by different techniques like diffuse reflectance UV-Vis spectroscopy (DRS), X-ray diffraction (XRD) and scanning electron microscopy equipped with energy dispersive X-ray microanalysis (SEM-EDX). DRS exhibited a shift in optical absorption wavelength to visible region and XRD analysis showed that only the anatase TiO2 formed in both of film and powder. The photocatalytic activity was evaluated by the degradation of methyl orange (MO) as a model. The modified TiO2 films and powders showed excellent visible-light photocatalytic ability for the degradation of MO under both irradiation of visible and sun light. So that, up to 96% MO can be decomposed in sun light only within 3 h in the presence of a modified TiO2 film consist of Tu/TiO2 molar ratio of 0.45 and 0.9 g PEG. On the other hand, MO solution was discolored completely under sun light in 75 min in the presence of the modified TiO2 powder.

  9. Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

    NASA Astrophysics Data System (ADS)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2015-09-01

    Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition at room temperature in oxygen ambient pressures of 75, 150 and 300 mTorr. The growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of as-grown films with thicknesses ˜65-420 nm were recorded for the three oxygen pressures. The growth rates were found to be highly linear both as a function of film thickness and oxygen pressure, indicating high reproducibility. All the films were optically smooth, hydrophobic and nanostructured with lateral grain shapes of ˜150 nm wide. This was found compatible with the deposition of condensed nanoclusters, formed in the ablation plume, on a cold and amorphous substrate. Films were nanocrystalline (wurtzite structure), c-axis oriented, with average crystallite size ˜22 nm for ZnO and ˜16 nm for AZO. In-plane compressive stress values of 2-3 GPa for ZnO films and 0.5 GPa for AZO films were found. Films also displayed high transmission greater than 95% in some cases, in the 400-800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to n-type conductive was observed for the films, with resistivity ˜103 Ω cm and Hall mobility in 4-14 cm2 V-1 s-1 range, showing marked dependences on film thickness and oxygen pressure. Applications in the fields of microfluidic devices and flexible electronics for these ZnO and AZO films are suggested.

  10. Anomalous behavior of B{sub 1g} mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO) thin films

    SciTech Connect

    Gautam, Subodh K. E-mail: fouran@gmail.com; Ojha, S.; Singh, Fouran E-mail: fouran@gmail.com; Gautam, Naina; Singh, R. G.; Shukla, D. K.

    2015-12-15

    The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO) thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO{sub 2} lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb{sup +5} in the TiO{sub 2} lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Raman (MR) spectra of films with small size crystallites shows stiffening of about 4 cm{sup −1} for the E{sub g(1)} mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B{sub 1g} mode exhibits a large anomalous softening of 20 cm{sup −1} with asymmetrical broadening; which was not reported for the case of pure TiO{sub 2} crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb{sup 5+} doping induced reduction of Ti{sup 4+} ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS) and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.

  11. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    NASA Astrophysics Data System (ADS)

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; Cen, Jiajie; Wu, Qiyuan; Orlov, Alexander; Liu, Mingzhao

    2015-11-01

    Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films' electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.Here we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is

  12. Nanocrystalline Cu2ZnSnSe4 thin films for solar cells application: Microdiffraction and structural characterization

    NASA Astrophysics Data System (ADS)

    Quiroz, Heiddy P.; Dussan, A.

    2016-08-01

    This work presents a study of the structural characterization of Cu2ZnSnSe4 (CZTSe) thin films by X-ray diffraction (XRD) and microdiffraction measurements. Samples were deposited varying both mass (MX) and substrate temperature (TS) at which the Cu and ZnSe composites were evaporated. CZTSe samples were deposited by co-evaporation method in three stages. From XRD measurements, it was possible to establish, with increased Ts, the presence of binary phases associated with the quaternary composite during the material's growth process. A stannite-type structure in Cu2ZnSnSe4 thin films and sizes of the crystallites varying between 30 and 40 nm were obtained. X-ray microdiffraction was used to investigate interface orientations and strain distributions when deposition parameters were varied. It was found that around the main peak, 2ϴ = 27.1°, the Cu1.8Se and ZnSe binary phases predominate, which are formed during the subsequent material selenization stage. A Raman spectroscopy study revealed Raman shifts associated with the binary composites observed via XRD.

  13. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    DOE PAGESBeta

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; Cen, Jiajie; Wu, Qiyuan; Orlov, Alexander; Liu, Mingzhao

    2015-10-13

    In this study, we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent frommore » pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.« less

  14. Effect of annealing on the properties of nanocrystalline CuInSSe thin films deposited by spray pyrolysis

    SciTech Connect

    Shrotriya, Vipin Rajaram, P.

    2015-08-28

    The effect of annealing CuInSSe thin films, which were grown on glass substrates using the spray pyrolysis technique from spray solutions having S/Se ionic ratio 0.6, were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical transmission measurements. The CuInSSe films were co-deposited from an aqueous solution containing CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2}. EDC was used as a complexing agent and films were deposited at the constant temperature 300°C. Post annealing (at 350°C) was used to improve the structural, morphological and optical properties of CuInSSe thin films. From the results, it is found that the films are single phase, p-type in conductivity having the chalcopyrite structure. From the Scherrer formula the average size of the films was found to be in the range (15-28) nm. Optical studies show that the optical band gap value increases slightly from 1.35 eV to 1.37 eV with annealing for films grown from spray solutions having S/Se ionic ratio 0.6.

  15. The role of the domain size and titanium dopant in nanocrystalline hematite thin films for water photolysis

    SciTech Connect

    Yan, Danhua; Tao, Jing; Kisslinger, Kim; Cen, Jiajie; Wu, Qiyuan; Orlov, Alexander; Liu, Mingzhao

    2015-10-13

    In this study, we develop a novel technique for preparing high quality Ti-doped hematite thin films for photoelectrochemical (PEC) water splitting, through sputtering deposition of metallic iron films from an iron target embedded with titanium (dopants) pellets, followed by a thermal oxidation step that turns the metal films into doped hematite. It is found that the hematite domain size can be tuned from ~10 nm to over 100 nm by adjusting the sputtering atmosphere from more oxidative to mostly inert. The better crystallinity at a larger domain size ensures excellent PEC water splitting performance, leading to record high photocurrent from pure planar hematite thin films on FTO substrates. Titanium doping further enhances the PEC performance of hematite photoanodes. The photocurrent is improved by 50%, with a titanium dopant concentration as low as 0.5 atom%. It is also found that the role of the titanium dopant in improving the PEC performance is not apparently related to the films’ electrical conductivity which had been widely believed, but is more likely due to the passivation of surface defects by the titanium dopants.

  16. Nanocrystalline diamond thin films on titanium-6 aluminum-4 vanadium alloy temporomandibular joint prosthesis simulants by microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fries, Marc Douglas

    A course of research has been performed to assess the suitability of nanocrystal-line diamond (NCD) films on Ti-6Al-4V alloy as wear-resistant coatings in biomedical implant use. A series of temporomandibular (TMJ) joint condyle simulants were polished and acid-passivated as per ASTM F86 standard for surface preparation of implants. A 3-mum-thick coating of NCD film was deposited by microwave plasma chemical vapor deposition (MPCVD) over the hemispherical articulation surfaces of the simulants. Plasma chemistry conditions were measured and monitored by optical emission spectroscopy (OES), using hydrogen as a relative standard. The films consist of diamond grains around 20 nm in diameter embedded in an amorphous carbon matrix, free of any detectable film stress gradient. Hardness averages 65 GPa and modulus measures 600 GPa at a depth of 250 nm into the film surface. A diffuse film/substrate boundary produces a minimal film adhesion toughness (GammaC) of 158 J/m2. The mean RMS roughness is 14.6 +/- 4.2 nm, with an average peak roughness of 82.6 +/- 65.9 nm. Examination of the surface morphology reveals a porous, dendritic surface. Wear testing resulted in two failed condylar coatings out of three tests. No macroscopic delamination was found on any sample, but micron-scale film pieces broke away, exposing the substrate. Electrochemical corrosion testing shows a seven-fold reduction in corrosion rate with the application of an NCD coating as opposed to polished, passivated Ti-6Al-4V, producing a corrosion rate comparable to wrought Co-Cr-Mo. In vivo biocompatibility testing indicates that implanted NCD films did not elicit an immune response in the rabbit model, and osteointegration was apparent for both compact and trabecular bone on both NCD film and bare Ti-6Al-4V. Overall, NCD thin film material is reasonably smooth, biocompatible, and very well adhered. Wear testing indicates that this material is unacceptable for use in demanding TMJ applications without

  17. Study of transparent conductive oxides and back reflectors for amorphous and nano-crystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Xiesen

    2007-12-01

    In this dissertation, back reflectors (BR) for hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H) based solar cells have been systematically studied. The main results achieved in the dissertation are as follows: (1) By using the optical scattering theory and PVOPTICS simulation program, it is found that to characterize the texture of the BR, not only the texture height, but also the texture angle (which is usually not mentioned in the literature) is needed. Moreover, the optical scattering of a rough surface is mainly determined by the texture angle. Experimentally the texture angle has been calculated from the raw AFM data for our BR samples using a FORTRAN program. (2) It has been deduced in this dissertation that the light trapping scheme with ideal rough BR should have an effective light path enhancement factor of n(n+1)2 in the absorption media (with refractive index n), rather than 4n2, the generally quoted value in references. In the case of Si as the absorption media this factor could be 25% larger than 4n2. (3) The optical and textural properties of Al and Ag have been studied. The results obtained show that Ag film has an improved reflectance in the long wavelength range and 5 times higher deposition rate than Al films deposited at the same conditions. It is found that Ag films have random orientation and are difficult to get a large texture angle and height profile; so in order to get enough texture for application in solar cells Ag needs a high deposition temperature (Ts) of 300 ˜ 400°C. In contrast, Al films have preferred (111) orientation and are easy to get large texture angle and height profiles. The impacts of deposition rate on the morphology of Ag and Al films have also been compared. (4) On the basis of understanding of the optical and textural properties of Al and Ag, a stacked configuration of ZnO/Ag/Al BR has been studied. It shows a high total reflectance comparable to ZnO/Ag structure and a high

  18. Nanocrystalline spin coated sol-gel hydroxyapatite thin films on Ti substrate: Towards potential applications for implants

    NASA Astrophysics Data System (ADS)

    Carradò, Adele; Viart, Nathalie

    2010-07-01

    Sol-gel spin coating is a promising process to obtain hydroxyapatite (HA) thin films. It is an alternative route to the hydroxyapatite deposition techniques usually employed to cover orthopaedic or dental titanium implant surfaces. The sol-gel (SG) parameters leading to a pure and crystalline HA coatings on Ti substrate were determined. They allow to reach a stoichiometric hydroxyapatite composition (ideal Ca/P atomic ratio 1.67) and a control of the growth of the crystalline phases. The samples, when observed by Scanning Electron Microscopy (SEM), exhibit grains of ca. 200 nm, well adapted for cell proliferation. The crystallisation of the HA films was thoroughly studied by X-Ray diffraction (XRD). The aim of this paper is to validate the sol-gel method as a processing method allowing the control of the mechanical state of the films and, in particular, of the residual stresses (RS) at metal-ceramic interfaces. These stresses were determined on titanium substrates. While the uncoated Ti substrates were in a compressive residual state, the coated ones were in a low tensile state. These results suggest that the sol-gel process is indeed a processing route to obtain HA coated Ti implants.

  19. Influence of annealing temperature on structural and optical properties of nanocrystalline Platinum octaethylporphyrin (PtOEP) thin films

    NASA Astrophysics Data System (ADS)

    Abuelwafa, A. A.; El-Denglawey, A.; Dongol, M.; El-Nahass, M. M.; Soga, T.

    2015-11-01

    Thermal evaporation technique was used to prepare the Platinum octaethylporphyrin (PtOEP) thin films at room temperature. The deposited films were studied before and after thermal annealing at 373 and 473 K for 3 h under vacuum (10-3 Pa). The film structure, surface morphologies and molecular structure were investigated as a function of annealing temperature by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM) and Fourier-transform infrared techniques (FT-IR) respectively. The results confirmed that the as-deposited and annealed films have nanostructural features. Optical constants of the as-deposited and annealed films have been obtained in the wavelength range 200-1100 nm by using spectrophotometric measurements. Analysis of the spectra of absorption coefficient showed indirect allowed transition and optical energy gap found to decrease with increase in annealing temperature. The dispersion of refractive index at the normal dispersion (λ > 600 nm) was discussed in terms of single oscillator model of Wemple-Didomenico. Based on generalized Miller's rule the third order non-linear susceptibility, χ(3) and nonlinear refractive index, n2 were estimated and studied at lower photon energy and showing lower value for the annealed film.

  20. Structural and mechanical properties changes induced in nanocrystalline ZrC thin films by Ar ion irradiation

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Socol, G.; Simeone, D.; Behdad, S.; Boesl, B.; Vasile, B. S.; Craciun, V.

    2016-01-01

    Thin ZrC films (<500 nm), grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser, were irradiated by 800 keV Ar ion at room temperature under a fixed flux of 1011 cm2 s-1 with fluences ranging from 1 × 1014 at/cm2 to 2 × 1015 at/cm2. Glancing incidence X-ray diffraction, X-ray reflectivity, transmission electron microscopy and nanoindentation investigations were used to study the structural modifications in the films' density, composition and mechanical properties induced by irradiation. After irradiation, the lattice parameter and crystallite size slightly increased, while the films' density decreased. Significant decreases in nanohardness and Young modulus values were also measured after irradiation at 1 × 1014 at/cm2 and 1 × 1015 at/cm2 fluences. No further major decreases were observed for a fluence of 2 × 1015 at/cm2. Scanning transmission electron microscopy and energy dispersive X-ray analysis showed a decrease in the Zr/C values in the irradiated film from surface towards the Si substrate.

  1. Influence of sputtering power on structural, mechanical and photoluminescence properties of nanocrystalline SiC thin films

    NASA Astrophysics Data System (ADS)

    Singh, Narendra; Kaur, Davinder

    2016-05-01

    In the present study, SiC thin films were deposited on Si (100) substrate by magnetron sputtering using a 4N purity commercial SiC target in argon atmosphere. The effect of sputtering RF power (140-170W) on structural, mechanical and photoluminescence properties were systematically studied by X-ray diffraction, field emission scanning electron microscopy, Nanoindentation and Spectrophotometer respectively. X-ray diffraction shows polycrystalline 4H-SiC phase with (105) preferred orientation and an enhancement in crystallite size with increasing power was also observed. The decrement in hardness and Young's modulus with increment in RF power was ascribed to Hall-Petch relation. The maximum hardness and Young's modulus were found to be 32 GPa and 232 GPa respectively. The photoluminescence spectra show peaks at 384 nm (3.22 eV) which corresponds to bandgap of 4H-SiC (phonon assisted band to band recombination) and 416 nm (2.99 eV) may be attributed to defect states and intensity of both peaks decreases as power increases.

  2. Dye-sensitized solar cell using sprayed ZnO nanocrystalline thin films on ITO as photoanode.

    PubMed

    Dhamodharan, P; Manoharan, C; Dhanapandian, S; Venkatachalam, P

    2015-02-01

    ZnO thin films had been successfully prepared by spray pyrolysis (SP) technique on ITO/Glass substrates at different substrate temperature in the range 250-400°C using Zinc acetylacetonate as precursor. The X-ray diffraction studies confirmed the hexagonal wurtzite structure with preferred orientation along (002) plane at substrate temperature 350°C and the crystallite size was found to vary from 18 to 47nm. The morphology of the films revealed the porous nature with the roughness value of 8-13nm. The transmittance value was found to vary from 60% to 85% in the visible region depending upon the substrate temperature and the band gap value for the film deposited at 350°C was 3.2eV. The obtained results revealed that the structures and properties of the films were greatly affected by substrate temperature. The near band edge emission observed at 398nm in PL spectra showed better crystallinity. The measured electrical resistivity for ZnO film was ∼3.5×10(-4)Ωcm at the optimized temperature 350°C and was of n-type semiconductor. The obtained porous nature with increased surface roughness of the film and good light absorbing nature of the dye paved way for implementation of quality ZnO in DSSCs fabrication. DSSC were assembled using the prepared ZnO film on ITO coated glass substrate as photoanode and its photocurrent - voltage performance was investigated. PMID:25459731

  3. Formation of Cu x Au1- x phases by cold homogenization of Au/Cu nanocrystalline thin films.

    PubMed

    Tynkova, Alona; Katona, Gabor L; Langer, Gabor A; Sidorenko, Sergey I; Voloshko, Svetlana M; Beke, Dezso L

    2014-01-01

    It is shown, by using depth profiling with a secondary neutral mass spectrometer and structure investigations by XRD and TEM, that at low temperatures, at which the bulk diffusion is frozen, a complete homogenization can take place in the Cu/Au thin film system, which leads to formation of intermetallic phases. Different compounds can be formed depending on the initial thickness ratio. The process starts with grain boundary interdiffusion, which is followed by a formation of reaction layers at the grain boundaries that leads to the motion of the newly formed interfaces perpendicular to the grain boundary plane. Finally, the homogenization finishes when all the pure components have been consumed. The process is asymmetric: It is faster in the Au layer. In Au(25nm)/Cu(50nm) samples the final state is the ordered AuCu3 phase. Decrease of the film thicknesses, as expected, results in the acceleration of the process. It is also illustrated that changing the thickness ratio either a mixture of Cu-rich AuCu and AuCu3 phases (in Au(25nm)/Cu(25nm) sample), or a mixture of disordered Cu- as well as Au-rich solid solutions (in Au(25nm)/Cu(12nm) sample) can be produced. By using a simple model the interface velocity in both the Cu and Au layers were estimated from the linear increase of the average composition and its value is about two orders of magnitude larger in Au (ca. 10(-11) m/s) than in Cu (ca. 10(-13) m/s). PMID:25247132

  4. Formation of CuxAu1− x phases by cold homogenization of Au/Cu nanocrystalline thin films

    PubMed Central

    Tynkova, Alona; Katona, Gabor L; Langer, Gabor A; Sidorenko, Sergey I; Voloshko, Svetlana M

    2014-01-01

    Summary It is shown, by using depth profiling with a secondary neutral mass spectrometer and structure investigations by XRD and TEM, that at low temperatures, at which the bulk diffusion is frozen, a complete homogenization can take place in the Cu/Au thin film system, which leads to formation of intermetallic phases. Different compounds can be formed depending on the initial thickness ratio. The process starts with grain boundary interdiffusion, which is followed by a formation of reaction layers at the grain boundaries that leads to the motion of the newly formed interfaces perpendicular to the grain boundary plane. Finally, the homogenization finishes when all the pure components have been consumed. The process is asymmetric: It is faster in the Au layer. In Au(25nm)/Cu(50nm) samples the final state is the ordered AuCu3 phase. Decrease of the film thicknesses, as expected, results in the acceleration of the process. It is also illustrated that changing the thickness ratio either a mixture of Cu-rich AuCu and AuCu3 phases (in Au(25nm)/Cu(25nm) sample), or a mixture of disordered Cu- as well as Au-rich solid solutions (in Au(25nm)/Cu(12nm) sample) can be produced. By using a simple model the interface velocity in both the Cu and Au layers were estimated from the linear increase of the average composition and its value is about two orders of magnitude larger in Au (ca. 10−11 m/s) than in Cu (ca. 10−13 m/s). PMID:25247132

  5. Dye-sensitized solar cell using sprayed ZnO nanocrystalline thin films on ITO as photoanode

    NASA Astrophysics Data System (ADS)

    Dhamodharan, P.; Manoharan, C.; Dhanapandian, S.; Venkatachalam, P.

    2015-02-01

    ZnO thin films had been successfully prepared by spray pyrolysis (SP) technique on ITO/Glass substrates at different substrate temperature in the range 250-400 °C using Zinc acetylacetonate as precursor. The X-ray diffraction studies confirmed the hexagonal wurtzite structure with preferred orientation along (0 0 2) plane at substrate temperature 350 °C and the crystallite size was found to vary from 18 to 47 nm. The morphology of the films revealed the porous nature with the roughness value of 8-13 nm. The transmittance value was found to vary from 60% to 85% in the visible region depending upon the substrate temperature and the band gap value for the film deposited at 350 °C was 3.2 eV. The obtained results revealed that the structures and properties of the films were greatly affected by substrate temperature. The near band edge emission observed at 398 nm in PL spectra showed better crystallinity. The measured electrical resistivity for ZnO film was ∼3.5 × 10-4 Ω cm at the optimized temperature 350 °C and was of n-type semiconductor. The obtained porous nature with increased surface roughness of the film and good light absorbing nature of the dye paved way for implementation of quality ZnO in DSSCs fabrication. DSSC were assembled using the prepared ZnO film on ITO coated glass substrate as photoanode and its photocurrent - voltage performance was investigated.

  6. Nanocrystalline ceramic materials

    DOEpatents

    Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

    1994-01-01

    A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

  7. Photo-electrochemical studies of chemically deposited nanocrystalline meso-porous n-type TiO2 thin films for dye-sensitized solar cell (DSSC) using simple synthesized azo dye

    NASA Astrophysics Data System (ADS)

    Ezema, C. G.; Nwanya, A. C.; Ezema, B. E.; Patil, B. H.; Bulakhe, R. N.; Ukoha, P. O.; Lokhande, C. D.; Maaza, Malik; Ezema, Fabian I.

    2016-04-01

    Nanocrystalline titanium dioxide (TiO2) thin films were deposited by successive ionic layer adsorption and reaction method onto fluorine doped tin oxide coated glass substrate at room temperature (300 K). Titanium trichloride and sodium hydroxide were used as cationic and anionic sources, respectively. The as-deposited and annealed films were characterized for structural, morphological, optical, electrical and wettability properties. The photoelectrochemical study of TiO2 sensitized with a laboratory synthesized organic dye (azo) was evaluated in the polyiodide electrolyte at 40 mW cm-2 light illumination intensity. The photovoltaic characteristics show a fill factor of 0.24 and solar conversion efficiency value of 0.032 % for a TiO2 thickness of 0.96 µm as compared to efficiency of 0.014 % for rose Bengal of the same thickness.

  8. Biomolecule-mediated synthesis of nanocrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Bae, Weon

    CdS and ZnS nanocrystalline semiconductors (NCs) were prepared by titrating inorganic sulfide into preformed Cd(II)- or Zn(II)-complexes of phytochelatins, glutathione or cysteine. This strategy resulted in the formation NCs capped by the chosen biomolecule. The range of sizes and their distributions depended primarily on the quantity of sulfide titrated and the biomolecule chosen for the initial metallo-complex. The processes of NC formation were studied by absorption and fluorescence spectrophotometry. The size distribution was analyzed by gel permeation chromatography. Ethanol precipitation of NCs under aqueous conditions was used to isolate nanoparticles within a very narrow size-range. Reduction of selected dyes was also studied on the surfaces of NCs. Glutathione-capped CdS nanoparticles exhibited significant size heterogeneity even at a single sulfide titration. In contrast, phytochelatins showed much less dispersion in size at a given sulfide titration. Phytochelatins could replace glutathione without changing the size of glutathione-capped CdS nanoparticles. Cysteine appeared to be intermediate between glutathione and phytochelatins in the formation of CdS nanoparticles. The calculated radii, using an effective mass approximation method, were 10.8-17.3, 10.6-11.8, and 13.5-15.5A for glutathione-, phytochelatin-, and cysteine-capped CdS nanoparticles, respectively. Cysteine-capped ZnS showed narrower size distribution than glutathione-capped ZnS. However, elevated temperatures were necessary to accomplish optimal yields of cysteine-capped ZnS NCs. An additional control over the size distribution of NCs was achieved by size-selective precipitation with ethanol. These procedures led to the isolation of nanoparticles that were more uniform in size and chemical compositions as determined by spectroscopic and chemical analyses of size-fractionated samples. Precipitation also allowed preparation of large quantities of powdered nanoparticles that could be

  9. Formation of high electrical-resistivity thin surface layer on carbonyl-iron powder (CIP) and thermal stability of nanocrystalline structure and vortex magnetic structure of CIP

    NASA Astrophysics Data System (ADS)

    Sugimura, K.; Miyajima, Y.; Sonehara, M.; Sato, T.; Hayashi, F.; Zettsu, N.; Teshima, K.; Mizusaki, H.

    2016-05-01

    This study focuses on the carbonyl-iron powder (CIP) used in the metal composite bulk magnetic core for high-efficient/light-weight SiC/GaN power device MHz switching dc-dc converter, where the fine CIP with a mean diameter of 1.1 μm is used to suppress the MHz band eddy current inside the CIP body. When applying the CIP to composite core together with the resin matrix, high electrical resistivity layer must be formed on the CIP-surface in order to suppress the overlapped eddy current between adjacent CIPs. In this study, tens nm thick silica (SiO2) was successfully deposited on the CIP-surface by using hydrolysis of TEOS (Si(OC2H5)4). Also tens nm thick oxidized layer of the CIP-surface was successfully formed by using CIP annealing in dry air. The SiC/GaN power device can operate at ambient temperature over 200 degree-C, and the composite magnetic core is required to operate at such ambient temperature. The as-made CIP had small coercivity below 800 A/m (10 Oe) due to its nanocrystalline-structure and had a single vortex magnetic structure. From the experimental results, both nanocrystalline and single vortex magnetic structure were maintained after heat-exposure of 250 degree-C, and the powder coercivity after same heat-exposure was nearly same as that of the as-made CIP. Therefore, the CIP with thermally stable nanocrystalline-structure and vortex magnetic state was considered to be heat-resistant magnetic powder used in the iron-based composite core for SiC/GaN power electronics.

  10. Nanocrystalline ceramic materials

    DOEpatents

    Siegel, R.W.; Nieman, G.W.; Weertman, J.R.

    1994-06-14

    A method is disclosed for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material. 19 figs.

  11. Optical Properties of ZnO-Alloyed Nanocrystalline Films

    DOE PAGESBeta

    Che, Hui; Huso, Jesse; Morrison, John L.; Thapa, Dinesh; Huso, Michelle; Yeh, Wei Jiang; Tarun, M. C.; McCluskey, M. D.; Bergman, Leah

    2012-01-01

    ZnO is emore » merging as one of the materials of choice for UV applications. It has a deep excitonic energy level and a direct bandgap of ~3.4 eV. Alloying ZnO with certain atomic constituents adds new optical and electronic functionalities to ZnO. This paper presents research on M g x Z n 1 − x O and Z n S 1 − x O x nanocrystalline flexible films, which enable tunable optical properties in the deep-UV and in the visible range. The ZnO and Mg 0 .3 Zn 0 .7 O films were found to have bandgaps at 3.35 and 4.02 eV, respectively. The photoluminescence of the Mg 0 .3 Zn 0 .7 O exhibited a bandedge emission at 3.95 eV, and at lower energy 3.38 eV due to the limited solubility inherent to these alloys. ZnS 0 .76 O 0 .24 and ZnS 0 .16 O 0 .84 were found to have bandgaps at 3.21 and 2.65 eV, respectively. The effect of nitrogen doping on ZnS 0 .16 O 0 .84 is discussed in terms of the highly lattice mismatched nature of these alloys and the resulting valence-band modification.« less

  12. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    SciTech Connect

    Chalana, S. R.; Mahadevan Pillai, V. P.; Ganesan, V.

    2015-10-15

    Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.

  13. Nanocrystalline cobalt oxides for carbon nanotube growth

    NASA Astrophysics Data System (ADS)

    Guo, Kun; Jayatissa, Ahalapitiya H.; Jayasuriya, Ambalangodage C.

    2007-09-01

    Thin Films of nanocrystalline cobalt oxide were formed by sol-gel method. Structure, optical properties and surface properties of these films were investigated by numerous characterization techniques. These films were successfully fabricated on glass substrates below 500°C. . Micropatterns of cobalt oxide thin films were also fabricated on glass and silicon substrates by employing a lift-off method. Crystal size of these nanocrystalline cobalt films could be successfully controllable by varying the amount of cobalt precursors and number of layers. These films were used as the seeding layers for carbon nanotube growth in a CVD process By changing the concentration of monomer precursors in the solgel coating solutions, different size nanoclusters hence different size carbon nanotubes could be synthesized in CVD process. This method can be used for controlled growth of carbon nanotubes for many different applications. In this paper, detail of these experimental results will be presented.

  14. Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

    SciTech Connect

    Das, P.; Sengupta, D.; Kasinadhuni, U.; Mondal, B.; Mukherjee, K.

    2015-06-15

    Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effect of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.

  15. Creating bulk nanocrystalline metal.

    SciTech Connect

    Fredenburg, D. Anthony; Saldana, Christopher J.; Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John; Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  16. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  17. In situ spectroelectrochemical and theoretical study on the oxidation of a 4H-imidazole-ruthenium dye adsorbed on nanocrystalline TiO2 thin film electrodes.

    PubMed

    Zhang, Ying; Kupfer, Stephan; Zedler, Linda; Schindler, Julian; Bocklitz, Thomas; Guthmuller, Julien; Rau, Sven; Dietzek, Benjamin

    2015-11-28

    Terpyridine 4H-imidazole-ruthenium(II) complexes are considered promising candidates for use as sensitizers in dye sensitized solar cells (DSSCs) by displaying broad absorption in the visible range, where the dominant absorption features are due to metal-to-ligand charge transfer (MLCT) transitions. The ruthenium(III) intermediates resulting from photoinduced MLCT transitions are essential intermediates in the photoredox-cycle of the DSSC. However, their photophysics is much less studied compared to the ruthenium(II) parent systems. To this end, the structural alterations accompanying one-electron oxidation of the RuIm dye series (including a non-carboxylic RuIm precursor, and, carboxylic RuImCOO in solution and anchored to a nanocrystalline TiO2 film) are investigated via in situ experimental and theoretical UV-Vis absorption and resonance Raman (RR) spectroelectrochemistry. The excellent agreement between the experimental and the TDDFT spectra derived in this work allows for an in-depth assignment of UV-Vis and RR spectral features of the dyes. A concordant pronounced wavelength dependence with respect to the charge transfer character has been observed for the model system RuIm, and both RuImCOO in solution and attached on the TiO2 surface. Excitation at long wavelengths leads to the population of ligand-to-metal charge transfer states, i.e. photoreduction of the central ruthenium(III) ion, while high-energy excitation features an intra-ligand charge transfer state localized on the 4H-imidazole moiety. Therefore, these 4H-imidazole ruthenium complexes investigated here are potential multi-photoelectron donors. One electron is donated from MLCT states, and additionally, the 4H-imidazole ligand reveals electron-donating character with a significant contribution to the excited states of the ruthenium(III) complexes upon blue-light irradiation. PMID:26478575

  18. Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD

    SciTech Connect

    Waman, V.S.; Kamble, M.M.; Ghosh, S.S.; Hawaldar, R.R.; Amalnerkar, D.P.; Sathe, V.G.; Gosavi, S.W.; Jadkar, S.R.

    2012-11-15

    Highlights: ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH{sub 4}. ► Increase in Urbach energy and defect density with increase in He dilution of SiH{sub 4}. ► Increasing He dilution, hydrogen bonding in the films shifts from Si-H{sub 2} and (Si-H{sub 2}){sub n} complexes to Si-H. ► Hydrogen content films were found to be <2.2 at.% but the bandgap remains as high as 2.0 eV or even more. -- Abstract: We report influence of helium dilution of silane in hot wire chemical vapor deposition for hydrogenated nano-crystalline silicon films. Structural properties of these films have been investigated by using Raman spectroscopy, low angle x-ray diffraction, Fourier transform infra-red spectroscopy and non-contact atomic force microscopy. Optical characterization has been performed by UV–visible spectroscopy. It has been observed that in contrast to conventional plasma enhanced chemical vapor deposition, the addition of helium with silane in hot wire chemical vapor deposition has an adverse effect on the crystallinity and the material properties. Hydrogen content in the films was found <2.2 at.% whereas the bandgap remain as high as 2 eV or more. Increase in Urbach energy and defect density also suggests the deterioration effect of helium on material properties. The possible reasons for the deterioration of crystallinity and the material properties have been discussed.

  19. Luminescent Processes Elucidated by Simple Experiments on ZnS.

    ERIC Educational Resources Information Center

    Schwankner, R.; And Others

    1981-01-01

    Describes some impurity-related optical properties of semiconductors, with special emphasis on the luminescence of zinc sulfide (ZnS). Presents and interprets five experiments using a ZnS screen, ultraviolet lamp, transparent Dewar liquid nitrogen, and a helium/neon gas base. Includes application of luminescence measurements to archaeology. (SK)

  20. Efficient preparation of nanocrystalline anatase TiO{sub 2} and V/TiO{sub 2} thin layers using microwave drying and/or microwave calcination technique

    SciTech Connect

    Zabova, H.; Sobek, J.; Cirkva, V.; Solcova, O.; Kment, S.; Hajek, M.

    2009-12-15

    This study has demonstrated that the synthesis of TiO{sub 2} and V/TiO{sub 2} thin layers may be significantly improved and extended if microwave energy is employed during the drying and/or calcination step. Thin nanoparticulate titania layers were prepared via the sol-gel method using titanium n-butoxide as a precursor. As prepared films were then analyzed by means of various characterization techniques (Raman spectroscopy, UV/Vis, AFM, XPS) in order to determine their functional properties. The photocatalytic activities of prepared layers were quantified by the decoloring rate of Rhodamine B. All thermal treatments in microwave field were done in the same manner, by using an IR pyrometer in the microwave oven and monitoring the temperature of the heating. Nevertheless the microwave and thermally prepared materials were different. This in turn may lead to differences in their functional and also photocatalytic properties. - Graphical abstract: This study has demonstrated that the synthesis of thin layers may be improved and extended if microwave energy is employed during the preparation process. Microwave processing has the potential to reduce the time, cost and energy input for the production of thin layers.

  1. Optical properties of ZnS1-xSex alloys fabricated by plasma-induced isoelectronic substitution

    NASA Astrophysics Data System (ADS)

    Rujkorakarn, Rong; Nelson, Art J.

    2000-06-01

    Nonequilibrium growth of thin-film ternary ZnS1-xSex semiconductor alloys was accomplished using physical vapor deposition with simultaneous electron cyclotron resonance H2S plasma activation. Substrate temperature, gas flow, and plasma power determine the ZnS1-xSex alloy composition and structure. Integrated optical transmission spectra for the ZnS1-xSex semiconductor alloys as a function of H2S plasma power are presented. Using the α2 vs hν plots for the various ZnS1-xSex films, the optical band gap Eg is extrapolated from each curve. This methodology yields the values of the band gap as a function of stoichiometry. We observe that the plasma induced isoelectronic substitution of S into the ZnSe lattice increases the band gap. This study shows that plasma-induced isoelectronic substitution is technologically feasible and useful for fabricating ternary II-VI alloys under nonequilibrium conditions.

  2. Resputtering Effect on Nanocrystalline Ni-Ti Alloy Films

    NASA Astrophysics Data System (ADS)

    Priydarshini, B. Geetha; Esakkiraja, N.; Aich, Shampa; Chakraborty, M.

    2016-04-01

    We report on the effect of resputtering on the properties of nanocrystalline Ni-Ti alloy thin films deposited using co-sputtering of Ni and Ti targets. In order to facilitate the formation of nanocrystalline phases, films were deposited at room temperature and 573 K (300 °C) with substrate bias voltage of -100 V. The influence of substrate material on the composition, surface topography microstructure, and phase formations of nanocrystalline Ni-Ti thin films was also systematically investigated. The preferential resputtering of Ti adatoms was lesser for Ni-Ti films deposited on quartz substrate owing to high surface roughness of 4.87 nm compared to roughness value of 1.27 nm for Si(100) substrate.

  3. Coherency strain and its effect on ionic conductivity and diffusion in solid electrolytes--an improved model for nanocrystalline thin films and a review of experimental data.

    PubMed

    Korte, C; Keppner, J; Peters, A; Schichtel, N; Aydin, H; Janek, J

    2014-11-28

    A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε0 is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ0 of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG(#). An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV(#), which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid-solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The

  4. Nanosecond magnetization reversal in nanocrystalline magnetic films

    NASA Astrophysics Data System (ADS)

    Rahman, I. Z.; Gandhi, A. A.; Khaddem-Mousavi, M. V.; Lynch, T. F.; Rahman, M. A.

    2007-03-01

    This paper reports on the investigation of dynamic magnetization reversal process in electrodeposited nanocrystalline Ni and Ni80Fe20 films by employing nanosecond magnetic pulse technique. The surface morphology has been investigated using SEM, EDAX, XRD and AFM analyses and static magnetic properties of the films are characterized by vibrating sample magnetometer (VSM). Two different techniques are designed and employed to study the nanosecond magnetization reversal process in nanocrystalline thin films: Magneto-Optical Kerr Effect (MOKE) and nanosecond pulsed field magnetometer. Results of dynamical behavior as a function of several variables such as magnitude of applied bias magnetic field, amplitude and width of the pulsed magnetic field are analyzed in detail using both techniques. A computer simulation package called Object Oriented Micro-Magnetic Framework (OOMMF) has been used to simulate the magnetic domain patterns of the samples.

  5. Optimization of the ZnS Buffer Layer by Chemical Bath Deposition for Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Jeon, Dong-Hwan; Hwang, Dae-Kue; Kim, Dae-Hwan; Kang, Jin-Kyu; Lee, Chang-Seop

    2016-05-01

    We evaluated a ZnS buffer layer prepared using a chemical bath deposition (CBD) process for application in cadmium-free Cu(In,Ga)Se2 (CIGS) solar cells. The ZnS buffer layer showed good transmittance (above 90%) in the spectral range from 300 to 800 nm and was non-toxic compared with the CdS buffer layers normally used in CIGS solar cells. The CBD process was affected by several deposition conditions. The deposition rate was dependent on the ammonia concentration (complexing agent). When the ammonia concentration was either too high or low, a decrease in the deposition rate was observed. In addition, post heat treatments at high temperatures had detrimental influences on the ZnS buffer layers because portions of the ZnS thin films were transformed into ZnO. With optimized deposition conditions, a CIGS solar cell with a ZnS buffer layer showed an efficiency of 14.18% with a 0.23 cm2 active area under 100 mW/cm2 illumination. PMID:27483938

  6. New route to the fabrication of nanocrystalline diamond films

    SciTech Connect

    Varshney, Deepak Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-02-07

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production.

  7. High durability antireflection coatings for silicon and multispectral ZnS

    NASA Astrophysics Data System (ADS)

    Joseph, Shay; Marcovitch, Orna; Yadin, Ygal; Klaiman, Dror; Koren, Nitzan; Zipin, Hedva

    2007-04-01

    In the current complex battle field, military platforms are required to operate on land, at sea and in the air in all weather conditions both day and night. In order to achieve such capabilities, advanced electro-optical systems are being constantly developed and improved. These systems such as missile seeker heads, reconnaissance and target acquisition pods and tracking, monitoring and alert systems have external optical components (window or dome) which must remain operational even at extreme environmental conditions. Depending on the intended use of the system, there are a few choices of window and dome materials. Amongst the more common materials one can point out sapphire, ZnS, germanium and silicon. Other materials such as spinel, ALON and yittria may also be considered. Most infrared materials have high indices of refraction and therefore they reflect a large part of radiation. To minimize the reflection and increase the transmission, antireflection (AR) coatings are the most common choice. Since these systems operate at different environments and weather conditions, the coatings must be made durable to withstand these extreme conditions. In cases where the window or dome is made of relatively soft materials such as multispectral ZnS, the coating may also serve as protection for the window or dome. In this work, several antireflection coatings have been designed and manufactured for silicon and multispectral ZnS. The coating materials were chosen to be either oxides or fluorides which are known to have high durability. Ellipsometry measurements were used to characterize the optical constants of the thin films. The effects of the deposition conditions on the optical constants of the deposited thin films and durability of the coatings will be discussed. The coatings were tested according to MIL-STD-810E and were also subjected to rain erosion tests at the University of Dayton Research Institute (UDRI) whirling arm apparatus in which one of the coatings showed

  8. Surface transmission enhancement of ZnS via continuous-wave laser microstructuring

    NASA Astrophysics Data System (ADS)

    Major, Kevin J.; Florea, Catalin M.; Poutous, Menelaos K.; Busse, Lynda E.; Sanghera, Jasbinder S.; Aggarwal, Ishwar D.

    2014-03-01

    Fresnel reflectivity at dielectric boundaries between optical components, lenses, and windows is a major issue for the optics community. The most common method to reduce the index mismatch and subsequent surface reflection is to apply a thin film or films of intermediate indices to the optical materials. More recently, surface texturing or roughening has been shown to approximate a stepwise refractive index thin-film structure, with a gradient index of refraction transition from the bulk material to the surrounding medium. Short-pulse laser ablation is a recently-utilized method to produce such random anti-reflective structured surfaces (rARSS). Typically, high-energy femtosecond pulsed lasers are focused on the surface of the desired optical material to produce periodic or quasi-periodic assemblies of nanostructures which provide reduced surface reflection. This technique is being explored to generate a variety of structures across multiple optical materials. However, femtosecond laser systems are relatively expensive and more difficult to maintain. We present here a low power and low-cost alternative to femtosecond laser ablation, demonstrating random antireflective structures on the surface of Cleartran ZnS windows produced with a continuous-wave laser. In particular, we find that irradiation with a low-powered (<10 mW), defocused, CW 325nm-wavelength laser produces a random surface with significant roughness on ZnS substrates. The transmission through the structured ZnS windows is shown to increase by up to 9% across a broad wavelength range from the visible to the near-infrared.

  9. Effect of solvent volume on the physical properties of aluminium doped nanocrystalline zinc oxide thin films deposited using a simplified spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Jabena Begum, N.; Mohan, R.; Ravichandran, K.

    2013-01-01

    Aluminium doped zinc oxide (AZO) thin films were deposited by employing a low cost and simplified spray technique using a perfume atomizer from starting solutions having different volumes (10, 20, … , 50 mL) of solvent. The effect of solvent volume on the structural, electrical, optical, photoluminescence (PL) and surface morphological properties was studied. The electrical resistivity of the AZO films is remarkably influenced by the variation in the solvent volume. The X-ray diffraction profiles clearly showed that all the films have preferential orientation along the (0 0 2) plane irrespective of the solvent volume. The crystallite size was found to be in the nano range of 35-46 nm. The optical transmittance in the visible region is desirably high (>85%). The AFM images show columnar morphology with varying grain size. The PL studies revealed that the AZO film deposited from 50 mL of solvent volume has good quality with lesser defect density.

  10. Nanocrystalline Heterojunction Materials

    DOEpatents

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2004-02-03

    Mesoporous nanocrystalline titanium dioxide heterojunction materials and methods of making the same are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  11. Nanocrystalline heterojunction materials

    DOEpatents

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2003-07-15

    Mesoporous nanocrystalline titanium dioxide heterojunction materials are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  12. ZnO nanorods decorated with ZnS nanoparticles

    SciTech Connect

    Joicy, S.; Sivakumar, P.; Thangadurai, P.; Ponpandian, N.

    2015-06-24

    In this study, ZnO nanorods (NRs) and ZnS nanoparticles decorated ZnO-NRs were prepared by a combination of hydrothermal and hydrolysis method. Structural and optical properties of the samples were studied by XRD, FE-SEM, UV-Vis DRS and photoluminescence spectroscopy. Microscopy analysis revealed that the diameter of ZnO-NRs was ∼500 nm and the length was ranging from a few hundred nm to several micrometers and their surface was decorated with ZnS nanoparticles. UV-Vis DRS showed the absorption of ZnS decorated ZnO-NRs was blue shifted with respect to pure ZnO-NRs which enhanced the separation of electron-hole pairs. PL spectrum of ZnS decorated ZnO-NRs showed a decrease in intensity of UV and green emissions with the appearance of blue emission at 436 nm.

  13. Manufacturing of transparent ZnS ceramics by powders sintering

    NASA Astrophysics Data System (ADS)

    Merdrignac-Conanec, O.; Hakmeh, N.; Durand, G.; Zhang, X.-H.

    2016-05-01

    We report the use of the low cost hot-pressing technique to produce ZnS for multispectral operation, from visible up to 12 μm. Considerable progress has been obtained by developing efficient precipitation and combustion powders synthesis procedures. The main emphasis has been on the elaboration of ZnS precursor powders with controlled morphology/chemical composition to reduce extrinsic scattering and impurities. We were able to produce ZnS parts with visible transparency and transmission in the 8-12 μm range that is comparable to that of CVD ZnS. The correlation of processing variables with powders sinterability and optical transmission of the HPed ceramics is discussed.

  14. Effect of sputtering power on structural, morphological, chemical, optical and electrical properties of Ti:Cu3N nano-crystalline thin films

    NASA Astrophysics Data System (ADS)

    Rahmati, Ali; Ahmadi, Kamran

    2012-12-01

    A sintered Ti13Cu87 bi-component target was sputtered by reactive DC magnetron sputtering in nitrogen ambient under various sputtering powers. Ti included Cu3N (Ti:Cu3N) thin films were deposited on Si (1 1 1), KBr (potassium bromide), quartz and glass slide substrates. Crystalline phases of the films were identified by X-ray diffraction (XRD) technique. Crystalline quality and phase stability are strongly dependent on sputtering power. Formation of copper vacancies in Cu3N cell substituted by Ti atoms and subsequent excess of interstitial nitrogen (N-rich) result in lattice constant expansion. Bonding environment in these films was obtained from fourier transform infrared (FTIR) spectroscopy. Surface morphology of the films that were studied by a scanning electron microscope (SEM) indicates a granular structure. Atomic Ti:Cu ratio of Ti:Cu3N films, determined by energy dispersive X-ray (EDX) spectroscopy, is less than that of original target. Optical study was performed by Vis-near IR transmittance spectroscopy. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using pointwise unconstrained minimization approach. The TiCu3N films are direct semiconductor with bandgap energy with the range of 2.79-3.34 eV. Ti incorporation and subsequent N-rich have a significant role in bandgap widening and lattice constant expansion. The films electrically show quasi-metallic behavior.

  15. 3-D solar cells by electrochemical-deposited Se layer as extremely-thin absorber and hole conducting layer on nanocrystalline TiO2 electrode

    PubMed Central

    2013-01-01

    A three-dimensional selenium solar cell with the structure of Au/Se/porous TiO2/compact TiO2/fluorine-doped tin oxide-coated glass plates was fabricated by an electrochemical deposition method of selenium, which can work for the extremely thin light absorber and the hole-conducting layer. The effect of experimental conditions, such as HCl and H2SeO3 in an electrochemical solution and TiO2 particle size of porous layers, was optimized. This kind of solar cell did not use any buffer layer between an n-type electrode (porous TiO2) and a p-type absorber layer (selenium). The crystallinity of the selenium after annealing at 200°C for 3 min in the air was significantly improved. The cells with a selenium layer deposited at concentrations of HCl = 11.5 mM and H2SeO3 = 20 mM showed the best performance, resulting in 1- to 2-nm thickness of the Se layer, short-circuit photocurrent density of 8.7 mA/cm2, open-circuit voltage of 0.65 V, fill factor of 0.53, and conversion efficiency of 3.0%. PMID:23286700

  16. Tin-Incorporation Induced Changes in the Microstructural, Optical, and Electrical Behavior of Tungsten Oxide Nanocrystalline Thin Films Grown Via Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Mukherjee, Ramnayan; Prajapati, C. S.; Sahay, P. P.

    2014-12-01

    Undoped and Sn-doped WO3 thin films were grown on cleaned glass substrates by chemical spray pyrolysis, using ammonium tungstate (NH4)2WO4 as the host precursor and tin chloride (SnCl4·5H2O) as the source of dopant. The XRD spectra confirm the monoclinic structure with a sharp narrow peak along (200) direction along with other peaks of low relative intensities for all the samples. On Sn doping, the films exhibit reduced crystallinity relative to the undoped film. The standard deviation for relative peak intensity with dopant concentration shows enhancement in heterogeneous nucleation growth. As evident from SEM images, on Sn doping, appearance of island-like structure (i.e., cluster of primary crystallites at few places) takes place. The transmittance has been found to decrease in all the Sn-doped films. The optical band gap has been calculated for both direct and indirect transitions. On Sn doping, the direct band gap shows a red shift and becomes 2.89 eV at 2 at.% doping. Two distinct peaks, one blue emission at 408 nm and other green emission at 533 nm, have been found in the PL spectra. Electrical conductivity has been found to increase with Sn doping.

  17. Magnetism in undoped ZnS nanotetrapods.

    PubMed

    Shan, Aixian; Liu, Wei; Wang, Rongming; Chen, Chinping

    2013-02-21

    The magnetism of undoped ZnS nanotetrapods, synthesized by a solvothermal method, has been investigated by magnetization measurements and first principle numerical calculations. The background magnetic impurity concentrations of Fe, Co and Ni were determined at ppm level by inductively coupled plasma mass spectrometry (ICP-MS). Hysteresis loops of weak ferromagnetism were observed, attributable to the magnetic impurities. However, the total magnetic moments analyzed from the paramagnetism are far beyond the explanations from the presence of these magnetic impurities, by about two orders of magnitude larger. It implies a different origin of the magnetic moments. Electron microscopy analysis reveals that there are defects in the sample. Numerical simulations indicate that the excessive magnetic moments might arise from the local band structure of polarized electrons associated with the defects of cation deficiency. This study elaborates on the understanding of magnetic properties in the non-magnetic II-VI semiconductor nanomaterials. PMID:23299077

  18. Synthesis and photoluminescence characteristics of doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Yang, P.; Lü, M.; Xü, D.; Yuan, D.; Zhou, G.

    2001-10-01

    Free-standing powders of doped ZnS nanoparticles have been synthesized by using a chemical co-precipitation of Zn2+, Mn2+, Cu2+ and Cd2+ with sulfur ions in aqueous solution. X-ray diffraction analysis shows that the diameter of the particles is ˜2-3 nm. The unique luminescence properties, such as the strength (its intensity is about 12 times that of ZnS nanoparticles) and stability of the visible-light emission, were observed from ZnS nanoparticles co-doped with Cu2+ and Mn2+. The nanoparticles could be doped with copper and manganese during the synthesis without altering the X-ray diffraction pattern. However, doping shifts the luminescence to 520-540 nm in the case of co-doping with Cu2+ and Mn2+. Doping also results in a blue shift on the excitation wavelength. In Cd2+-doped ZnS nanometer-scale particles, the fluorescence spectra show a red shift in the emission wavelength (ranging from 450 nm to 620 nm). Also a relatively broad emission (ranging from blue to yellow) has been observed. The results strongly suggest that doped ZnS nanocrystals, especially two kinds of transition metal-activated ZnS nanoparticles, form a new class of luminescent materials.

  19. Optical properties of nanocrystalline WO{sub 3} and WO{sub 3-x} thin films prepared by DC magnetron sputtering

    SciTech Connect

    Johansson, Malin B. Niklasson, Gunnar A.; Österlund, Lars; Zietz, Burkhard

    2014-06-07

    The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with different oxygen vacancy (V{sub o}) concentration, have been studied by spectrophotometry and photoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the films exhibit similar band gap energies, E{sub g} ≈ 2.9 eV. The absorption spectra of the films show two pronounced absorption bands in the near-infrared region. One peak (P1) is located at approximately 0.7 eV, independent of V{sub o} concentration. A second peak (P2) shifts from 0.96 eV to 1.16 eV with decreasing V{sub o} concentration. Peak P1 is assigned to polaron absorption due to transitions between tungsten sites (W{sup 5+} → W{sup 6+}), or an optical transition from a neutral vacancy state to the conduction band, V{sub o}{sup 0} → W{sup 6+}. The origin of peak P2 is more uncertain but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

  20. Mechanical properties of nanocrystalline cobalt

    NASA Astrophysics Data System (ADS)

    Karimpoor, Amir A.; Erb, Uwe

    2006-05-01

    Due to their excellent wear and corrosion properties, nanocrystalline cobalt and several cobalt alloys made by electrodeposition are currently being developed as environmentally benign replacement coatings for hard chromium electrodeposits. The focus of this study is on the mechanical properties of nanocrystalline cobalt, which are currently not well understood. A comparison is presented for hardness, tensile properties, Charpy impact properties and fracture surface analysis of both nanocrystalline (grain size: 12 nm) and conventional polycrystalline (grain size: 4.8 m) cobalt. It is shown that the hardness and tensile strength of nanocrystalline cobalt is 2-3 times higher than for polycrystalline cobalt. However, in contrast to other nanocrystalline materials tested previously, nanocrystalline cobalt retains considerable ductility with elongation to fracture values up to 7%.

  1. Role of ZnS shell on stability, cytotoxicity, and photocytotoxicity of water-soluble CdSe semiconductor quantum dots surface modified with glutathione

    NASA Astrophysics Data System (ADS)

    Ibrahim, Salwa Ali; Ahmed, Wafaa; Youssef, Tareq

    2015-01-01

    The present study examines the stability and cytotoxicity of two quantum dots (QDs) systems in cell culture medium in the presence and absence of a thin layer of a ZnS shell. The two systems were built from a core, CdSe, and surface modified with glutathione (GSH), named CdSe˜GSH and CdSe/ZnS˜GSH. CdSe/ZnS˜GSH QDs exhibited a high photostability with a pronounced enhancement in photoluminescence in cell culture medium. Both systems showed insignificant reduction in cell viability of HFB-4 and MCF-7 cell lines in the dark. Following 60 min of low laser power exposure (irradiance of 10 mW cm-2), CdSe˜GSH QDs showed a remarkable decrease in cell viability, which may result from the detachment of GSH molecules, whereas CdSe/ZnS˜GSH QDs showed an insignificant decrease either immediately after irradiation or even 2 h post-exposure, which can be attributed to the high affinity between ZnS and GSH coatings. This study demonstrated that a thin layer of ZnS shell played a crucial role in the stability of CdSe/ZnS˜GSH QDs in cell culture medium with an improvement in luminescence efficiency, whereas surface modification with GSH molecules in the presence of ZnS showed no significant cytotoxic effects before or after photoirradiation, which makes this system attractive for several biomedical applications.

  2. Nanocrystalline Pd alloy films coated by electroless deposition.

    PubMed

    Strukov, G V; Strukova, G K; Batov, I E; Sakharov, M K; Kudrenko, E A; Mazilkin, A A

    2011-10-01

    The structures of palladium and palladium alloys thin films deposited from organic electrolytes onto metallic substrates by electroless plating method have been investigated. The coatings are dense, pore-free 0.005-1 microm thick films with high adhesive strength to the substrate surface. EDX, XRD, SEM and TEM methods were used to determine the composition and structure of alloy coatings of the following binary systems: Pd-Au, Pd-Ag, Pd-Ni, Pd-Pb, and ternary system Pd-Au-Ni. The coatings of Pd-Au, Pd-Ag and Pd-Ni have a solid solution structure, whereas Pd-Pb is intermetallic compound. It has been found that the deposited films consist of nanocrystalline grains with sizes in the range of 11-35 nm. Scanning and transmission electron microscopy investigations reveal the existence of clusters formed by nanocrystalline grains. The origin for the formation of nanocrystalline structures of coating films is discussed. PMID:22400291

  3. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1−x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1−x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1−x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1−x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1−x}N films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not

  4. In situ observation of deformation processes in nanocrystalline face-centered cubic metals

    PubMed Central

    Kobler, Aaron; Brandl, Christian; Hahn, Horst

    2016-01-01

    Summary The atomistic mechanisms active during plastic deformation of nanocrystalline metals are still a subject of controversy. The recently developed approach of combining automated crystal orientation mapping (ACOM) and in situ straining inside a transmission electron microscope was applied to study the deformation of nanocrystalline PdxAu1− x thin films. This combination enables direct imaging of simultaneously occurring plastic deformation processes in one experiment, such as grain boundary motion, twin activity and grain rotation. Large-angle grain rotations with ≈39° and ≈60° occur and can be related to twin formation, twin migration and twin–twin interaction as a result of partial dislocation activity. Furthermore, plastic deformation in nanocrystalline thin films was found to be partially reversible upon rupture of the film. In conclusion, conventional deformation mechanisms are still active in nanocrystalline metals but with different weighting as compared with conventional materials with coarser grains. PMID:27335747

  5. In situ observation of deformation processes in nanocrystalline face-centered cubic metals.

    PubMed

    Kobler, Aaron; Brandl, Christian; Hahn, Horst; Kübel, Christian

    2016-01-01

    The atomistic mechanisms active during plastic deformation of nanocrystalline metals are still a subject of controversy. The recently developed approach of combining automated crystal orientation mapping (ACOM) and in situ straining inside a transmission electron microscope was applied to study the deformation of nanocrystalline Pd x Au1- x thin films. This combination enables direct imaging of simultaneously occurring plastic deformation processes in one experiment, such as grain boundary motion, twin activity and grain rotation. Large-angle grain rotations with ≈39° and ≈60° occur and can be related to twin formation, twin migration and twin-twin interaction as a result of partial dislocation activity. Furthermore, plastic deformation in nanocrystalline thin films was found to be partially reversible upon rupture of the film. In conclusion, conventional deformation mechanisms are still active in nanocrystalline metals but with different weighting as compared with conventional materials with coarser grains. PMID:27335747

  6. Role of ZnS shell on stability, cytotoxicity, and photocytotoxicity of water-soluble CdSe semiconductor quantum dots surface modified with glutathione

    NASA Astrophysics Data System (ADS)

    Ibrahim, Salwa Ali; Ahmed, Wafaa; Youssef, Tareq

    2014-09-01

    Biomedical applications of quantum dots (QDs) have become a subject of a considerable concern in the past few decades. The present study examines the stability and cytotoxicity of two QDs systems in cell culture medium in the presence and absence of a thin layer of ZnS shell. The two systems were built from core, CdSe QDs, surface modified with glutathione (GSH), named CdSe˜GSH and CdSe/ZnS˜GSH. Our results demonstrated that 0.7 nm layer of ZnS shell played a significant role in the stability of CdSe/ZnS~GSH QDs in supplemented cell culture medium (RPMI). Also, a significant improvement in the physicochemical properties of the core CdSe QDs was shown by maintaining their spectroscopic characteristics in RPMI medium due to the wide band gap of ZnS shell. Both systems showed insignificant reduction in cell viability of HFB-4 or MCF-7 cell lines in the dark which was attributed to the effective GSH coating. Following photoirradiation with low laser power (irradiance 10 mW cm-2), CdSe~GSH QDs showed a significant decrease in cell viability after 60 min irradiation which may result from detachment of GSH molecules. Under the same irradiation condition, CdSe/ZnS~GSH QDs showed insignificant decrease in cell viability or after 2 h incubation from laser irradiation which was attributed to the strong binding between ZnS and GSH coatings. It can be concluded that the stability of CdSe core QDs was significantly improved in cell culture medium by encapsulation with a thin layer of ZnS shell whereas their cytotoxicity and photo-cytotoxicity are highly dependent on surface modification.

  7. Effect of UV irradiation on evaporated ZnS films

    NASA Technical Reports Server (NTRS)

    Hass, G.; Heaney, J. B.; Hunter, W. R.; Angel, D. W.

    1980-01-01

    Evaporated ZnS films used as a component in reflectance enhancing or decreasing multilayer coatings for mirrors, transparent optical materials, and vacuum UV reflecting optics, are investigated with reference to the reflectance loss under UV irradiation and the formation of ZnO as a result of the decomposition of ZnS in the presence of oxygen. Reflectance measurements over a broad wavelength range reveal that the UV induced reflectance losses are generally restricted to wavelengths shorter than 4000 A and are most severe in the vacuum UV region. After 134 hr of UV exposure initially polycrystalline film of 150-200 A thick is completely converted to amorphous ZnO. The results demonstrate that caution should be exercised in employing ZnS as the outer layer in an optical coating system designed for use in the UV and vacuum UV regions.

  8. Richardson-Schottky transport mechanism in ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Ali, Hassan; Khan, Usman; Rafiq, M. A.; Falak, Attia; Narain, Adeela; Jing, Tang; Xu, Xiulai

    2016-05-01

    We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

  9. Processing of nanocrystalline ceramics

    SciTech Connect

    Ciftcioglu, M. . Center for Micro-Engineered Ceramics); Mayo, M.J. )

    1990-01-01

    Methods of preparing non-agglomerated powders for three systems -- yttria, titania, and yttria-stabilized zirconia -- are reviewed. The non-agglomerated nature of these powders should make it possible to sinter them into dense ceramic bodies with nanocrystalline grain sizes. Experiments with yttria-stabilized zirconia have shown that this is indeed the case, with mean linear intercept grain sizes of 60 nm resulting from original powder particle diameters of 13 nm. This ultrafine-grained zirconia is shown, in turn, to have superplastic forming rates 34 times faster than a 0.3 {mu}m-grained commercial zirconia of the same composition. 7 refs., 9 figs.

  10. Properties of mechanochemically synthesized ZnS nanoparticles.

    PubMed

    Dutková, E; Baláz, P; Pourghahramani, P; Velumani, S; Ascencio, J A; Kostova, N G

    2009-11-01

    The bulk and surface properties of mechanochemically synthesized ZnS nanoparticles were studied. XRD, SEM, TEM (HRTEM), AFM, UV-VIS, low temperature nitrogen sorption as well as TPR characterization methods have been applied. Cubic ZnS nanocrystals (2-4 nm) with characteristic blue shift have been obtained by high-energy milling. There is an evidence of the nanocrystal aggregates formation in products of milling. The surface uniformity, homogeneity as well as enhanced uptake of hydrogen have been documented. PMID:19908571

  11. Effect of Cr doping on structural and magnetic properties of ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Virpal, Singh, Jasvir; Sharma, Sandeep; Singh, Ravi Chand

    2016-05-01

    The structural, optical and magnetic properties of pure and Cr doped ZnS nanoparticles were studied at room temperature. X-ray diffraction analysis confirmed the absence of any mixed phase and the cubic structure of ZnS in pure and Cr doped ZnS nanoparticles. Fourier transfer infrared spectra confirmed the Zn-S stretching bond at 664 cm-1 of ZnS in all prepared nanoparticles. The UV-Visible absorption spectra showed blue shift which became even more pronounced in Cr doped ZnS nanoparticles. However, at relatively higher Cr concentrations a slower red shift was shown by the doped nanoparticles. This phenomenon is attributed to sp-d exchange interaction that becomes prevalent at higher doping concentrations. Further, magnetic hysteresis measurements showed that Cr doped ZnS nanoparticles exhibited ferromagnetic behavior at room temperature.

  12. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  13. Light emission, light detection and strain sensing with nanocrystalline graphene

    NASA Astrophysics Data System (ADS)

    Riaz, Adnan; Pyatkov, Feliks; Alam, Asiful; Dehm, Simone; Felten, Alexandre; Chakravadhanula, Venkata S. K.; Flavel, Benjamin S.; Kübel, Christian; Lemmer, Uli; Krupke, Ralph

    2015-08-01

    Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically, the light-matter interaction in graphene is of a broadband type. However, by integrating graphene into optical micro-cavities narrow-band light emitters and detectors have also been demonstrated. These devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end, we explore in this work the feasibility of replacing graphene with nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman and x-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.

  14. Light emission, light detection and strain sensing with nanocrystalline graphene.

    PubMed

    Riaz, Adnan; Pyatkov, Feliks; Alam, Asiful; Dehm, Simone; Felten, Alexandre; Chakravadhanula, Venkata S K; Flavel, Benjamin S; Kübel, Christian; Lemmer, Uli; Krupke, Ralph

    2015-08-14

    Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically, the light-matter interaction in graphene is of a broadband type. However, by integrating graphene into optical micro-cavities narrow-band light emitters and detectors have also been demonstrated. These devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end, we explore in this work the feasibility of replacing graphene with nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman and x-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors. PMID:26207014

  15. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    PubMed

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased. PMID:24922214

  16. FAST TRACK COMMUNICATION: Nanocrystalline silicon film growth morphology control through RF waveform tailoring

    NASA Astrophysics Data System (ADS)

    Johnson, Erik V.; Verbeke, Thomas; Vanel, Jean-Charles; Booth, Jean-Paul

    2010-10-01

    We demonstrate the application of RF waveform tailoring to generate an electrical asymmetry in a capacitively coupled plasma-enhanced chemical vapour deposition system, and its use to control the growth mode of hydrogenated amorphous and nanocrystalline silicon thin films deposited at low temperature (150 °C). A dramatic shift in the dc bias potential at the powered electrode is observed when simply inverting the voltage waveform from 'peaks' to 'troughs', indicating an asymmetric distribution of the sheath voltage. By enhancing or suppressing the ion bombardment energy at the substrate (situated on the grounded electrode), the growth of thin silicon films can be switched between amorphous and nanocrystalline modes, as observed using in situ spectroscopic ellipsometry. The effect is observed at pressures sufficiently low that the collisional reduction in average ion bombardment energy is not sufficient to allow nanocrystalline growth (<100 mTorr).

  17. Optical and photocatalytic properties of Corymbia citriodora leaf extract synthesized ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Chen, Jinfeng; Hu, Binjie; Zhi, Jinhu

    2016-05-01

    ZnS nanoparticles were biosynthesized via a green and simple method using Corymbia citriodora leaf extract as reducing and stabilizing agent. The biosynthesized ZnS nanoparticles were in the size range of 45 nm with a surface plasmon resonance band at 325 nm. XRD analysis revealed that the nanoparticles were in the sphalerite phase. Quantum confinement effects of biosynthesized ZnS nanoparticles were observed using photoluminescence spectroscopy. The photocatalytic activity of the ZnS nanoparticles has been investigated by degradation methylene blue under UV light irradiation. Due to the smaller size and excellent dispersicity, the biosynthesized ZnS nanoparticles showed a superior photocatalytic performance compared with that of chemical synthesize ZnS nanoparticles.

  18. Photoluminescence study of ZnS and ZnS:Pb nanoparticles

    SciTech Connect

    Virpal, Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

    2015-05-15

    Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.

  19. Synthesis and enhanced humidity detection response of nanoscale Au-particle-decorated ZnS spheres

    PubMed Central

    2014-01-01

    We successfully prepared Au-nanoparticle-decorated ZnS (ZnS-Au) spheres by sputtering Au ultrathin films on surfaces of hydrothermally synthesized ZnS spheres and subsequently postannealed the samples in a high-vacuum atmosphere. The Au nanoparticles were distributed on ZnS surfaces without substantial aggregation. The Au nanoparticle diameter range was 5 to 10 nm. Structural information showed that the surface of the annealed ZnS-Au spheres became more irregular and rough. A humidity sensor constructed using the Au-nanoparticle-decorated ZnS spheres demonstrated a substantially improved response to the cyclic change in humidity from 11% relative humidity (RH) to 33% to 95% RH at room temperature. The improved response was associated with the enhanced efficiency of water molecule adsorption onto the surfaces of the ZnS because of the surface modification of the ZnS spheres through noble-metal nanoparticle decoration. PMID:25520595

  20. Preparation and Gas Sensing Properties of Hollow ZnS Microspheres.

    PubMed

    Xiao, Jingkun; Song, Chengwen; Song, Mingyan; Dong, Wei; Li, Chen; Yin, Yanyan

    2016-03-01

    Hollow ZnS microspheres are synthesized by a facile hydrothermal method. Morphology and structure of the ZnS microspheres are analyzed by SEM, TEM, XRD and N2 sorption technique, Gas sensing properties of the as-prepared ZnS sensor are also systematically investigated. The results show that the ZnS microspheres have well-developed porous and hollow nanostructure. The sensor based on the ZnS microspheres exhibits ultra-fast response (1-2 s) and fast recovery time (7-34 s) towards ethanol at the optimal operating temperature of 160 degrees C. Moreover, the ZnS sensor also demonstrates high selectivity to other gases such as methanol, benzene, dichloromethane and hexane, suggesting that it is a promising candidate for ethanol sensing applications. PMID:27455754

  1. Photoluminescence study of ZnS and ZnS:Pb nanoparticles

    NASA Astrophysics Data System (ADS)

    Virpal, Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

    2015-05-01

    Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states.

  2. Silver film on nanocrystalline TiO{sub 2} support: Photocatalytic and antimicrobial ability

    SciTech Connect

    Vukoje, Ivana D.; Tomašević-Ilić, Tijana D.; Zarubica, Aleksandra R.; Dimitrijević, Suzana; Budimir, Milica D.; Vranješ, Mila R.; Šaponjić, Zoran V.; Nedeljković, Jovan M.

    2014-12-15

    Highlights: • Simple photocatalytic rout for deposition of Ag on nanocrystalline TiO{sub 2} films. • High antibactericidal efficiency of deposited Ag on TiO{sub 2} support. • Improved photocatalytic performance of TiO{sub 2} films in the presence of deposited Ag. - Abstract: Nanocrystalline TiO{sub 2} films were prepared on glass slides by the dip coating technique using colloidal solutions consisting of 4.5 nm particles as a precursor. Photoirradiation of nanocrystalline TiO{sub 2} film modified with alanine that covalently binds to the surface of TiO{sub 2} and at the same time chelate silver ions induced formation of metallic silver film. Optical and morphological properties of thin silver films on nanocrystalline TiO{sub 2} support were studied by absorption spectroscopy and atomic force microscopy. Improvement of photocatalytic performance of nanocrystalline TiO{sub 2} films after deposition of silver was observed in degradation reaction of crystal violet. Antimicrobial ability of deposited silver films on nanocrystalline TiO{sub 2} support was tested in dark as a function of time against Escherichia coli, Staphylococcus aureus, and Candida albicans. The silver films ensured maximum cells reduction of both bacteria, while the fungi reduction reached satisfactory 98.45% after 24 h of contact.

  3. Far-infrared spectra of mesoporous ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Trajić, J.; Romčević, M.; Romčević, N.; Babić, B.; Matović, B.; Baláž, P.

    2016-07-01

    ZnS nanoparticles were synthesized mechanochemically by high-energy milling, with three different milling times (5 min, 10 min and 20 min). Nitrogen adsorption method was used for examining specific surface area and texture of obtained powders. It was found that all samples are completely mesoporous. The optical properties were studied by far-infrared spectroscopy at room temperature in spectral region of 50-600 cm-1. The analysis of the far-infrared reflectivity spectra was made by the fitting procedure. The dielectric function of ZnS nanoparticles is modeled as a mixture of homogenous spherical inclusions in air by the Maxwell-Garnet formula. In the analysis of the far-infrared reflection spectra, appearance of combined plasmon-LO phonon modes (CPPMs) with high phonon damping are observed, which causes decrease of coupled plasmon-phonon frequencies.

  4. Uniform and continuous silica nanocoatings on ZnS phosphors

    NASA Astrophysics Data System (ADS)

    Yuan, Jiongliang

    2008-04-01

    The penetration depth of the primary electrons into amorphous silica, anatase titania, Y2O3, ZnO, In2O3, indium and tin oxides is compared at lower voltages. It shows that amorphous silica has the largest penetration depth, thus the silica coatings will lead to minimal energy loss and maximal cathodoluminescence intensity. Almost uniform and continuous silica coatings on ZnS phosphors have successfully been obtained by a sol-gel method with the catalysis of ammonia. Zeta potential analysis shows that the ZnS phosphors are covered almost completely. An adsorption-catalysis-growth mechanism is suggested, and used to explain other ammonia-catalyzed coating processes.

  5. Optical Properties of Co2+ Doped ZnS Nanocrystals

    NASA Astrophysics Data System (ADS)

    Sarkar, R.; Kumbhakar, P.; Mitra, A. K.

    2010-10-01

    ZnS nanocrystals with Co2+ doping have been prepared through a soft chemical route. The undoped ZnS and Co2+ doped ZnS:Co nanocrystals have been analyzed using X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), and ultraviolet-visible (UV-VIS) spectrophotometer. Undoped sample exhibits room-temperature photoluminescence (PL) emission in the blue region with a broad spectral band peaked at ˜397 nm under UV excitation. But from the 1.5% Co2+ doped samples, a strong blue emission peaked at ˜470 nm is observed and further increase in doping leads to considerable blue shift and enhancement in intensity of the PL spectrum.

  6. Luminance behavior of Ce3+ doped ZnS nanostructures.

    PubMed

    Shanmugam, N; Cholan, S; Kannadasan, N; Sathishkumar, K; Viruthagiri, G

    2014-01-24

    We report the synthesis and characterization of undoped and various levels of Ce(3+) doped ZnS nanocrystal. The structure and size of the products were studied by X-ray diffraction (XRD). The existence of functional groups was identified by Fourier transform infrared spectrometry (FT-IR). The UV-Visible measurements reveal that the synthesized products are blue shifted when compared with bulk phase of ZnS as a result of quantum confinement effect. The PL studies show an enhancement in the intensity of emission band in the UV region on increased Ce(3+) doping. The morphology of the products was evaluated by Field emission scanning electron microscope (FESEM) and High resolution transmission electron microscopy (FESEM). The presence of Ce(3+) was confirmed by Energy dispersive spectral analysis (EDS). The thermal stability of pure and doped products was analyzed by thermo gravimetric and differential thermal analysis (TG-DTA). PMID:24084485

  7. CTAB-Assisted Solvothermal Growth and Optical Characterization of Flower-Like ZnS Structures

    NASA Astrophysics Data System (ADS)

    Roy, J. S.; Pal Majumder, T.

    2016-06-01

    Flower-like ZnS structures have been prepared by solvothermal method with the assistance of cetyl trimethyl ammonium bromide (CTAB). The effects of different experimental conditions on the morphology of ZnS structure have been investigated. The performances of ZnS structures have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), room temperature photoluminescence (PL), and UV-visible absorption spectroscopy. The XRD patterns indicate that the prepared ZnS structures are highly crystallized, which are of hexagonal phase. The SEM images indicate that the main role of CTAB is to assemble the ZnS flakes together to form the flower-like structures, and the reaction time affects the morphology of ZnS. The growth mechanism for the formation of flower-like ZnS structure is also described. The absorption and emission bands gradually shift towards longer wavelength due to the transformation of flower-like ZnS nanoflowers from ZnS flakes.

  8. CTAB-Assisted Solvothermal Growth and Optical Characterization of Flower-Like ZnS Structures

    NASA Astrophysics Data System (ADS)

    Roy, J. S.; Pal Majumder, T.

    2016-08-01

    Flower-like ZnS structures have been prepared by solvothermal method with the assistance of cetyl trimethyl ammonium bromide (CTAB). The effects of different experimental conditions on the morphology of ZnS structure have been investigated. The performances of ZnS structures have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), room temperature photoluminescence (PL), and UV-visible absorption spectroscopy. The XRD patterns indicate that the prepared ZnS structures are highly crystallized, which are of hexagonal phase. The SEM images indicate that the main role of CTAB is to assemble the ZnS flakes together to form the flower-like structures, and the reaction time affects the morphology of ZnS. The growth mechanism for the formation of flower-like ZnS structure is also described. The absorption and emission bands gradually shift towards longer wavelength due to the transformation of flower-like ZnS nanoflowers from ZnS flakes.

  9. Cements from nanocrystalline hydroxyapatite.

    PubMed

    Barralet, J E; Lilley, K J; Grover, L M; Farrar, D F; Ansell, C; Gbureck, U

    2004-04-01

    Calcium phosphate cements are used as bone substitute materials because they may be moulded to fill a void or defect in bone and are osteoconductive. Although apatite cements are stronger than brushite cements, they are potentially less resorbable in vivo. Brushite cements are three-component systems whereby phosphate ions and water react with a soluble calcium phosphate to form brushite (CaHPO4 x 2H2O). Previously reported brushite cement formulations set following the mixture of a calcium phosphate, such as beta-tricalcium phosphate (beta-TCP), with an acidic component such as H3PO4 or monocalcium phosphate monohydrate (MCPM). Due to its low solubility, hydroxyapatite (HA) is yet to be reported as a reactive component in calcium phosphate cement systems. Here we report a new cement system setting to form a matrix consisting predominantly of brushite following the mixture of phosphoric acid with nanocrystalline HA. As a result of the relative ease with which ionic substitutions may be made in apatite this route may offer a novel way to control cement composition or setting characteristics. Since kinetic solubility is dependent on particle size and precipitation temperature is known to affect precipitated HA crystal size, the phase composition and mechanical properties of cements made from HA precipitated at temperatures between 4 and 60 degrees C were investigated. PMID:15332608

  10. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect

    Takashiri, Masayuki Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake; Hagino, Harutoshi; Miyazaki, Koji; Tanaka, Saburo

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17 MeV. For the n-type thin films, nanodots with a diameter of less than 10 nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  11. Frozen ZnS Aqueous Suspension Nonlinear Optical Properties

    NASA Astrophysics Data System (ADS)

    Ehrlich, H.; Kudryavtseva, A.; Lisichkin, G.; Savranskii, V.; Tcherniega, N.; Zemskov, K.; Zhilenko, M.

    2015-11-01

    The study of nonlinear effects, caused by nanosecond laser pulses' impact on the frozen ZnS nanoparticles' suspension, is presented. Laser pulses excite strong nanoparticles' coherent vibrations in the near-terahertz range which lead to different nonlinear effects: X-ray emission, stimulated low-frequency Raman scattering, and luminescence. X-ray emission was observed as bright spots on the special X-ray film. This provides evidence that an X-ray propagates with narrow beams. Stimulated low-frequency Raman scattering is a result of light scattering by acoustic vibrations of nanoparticles. Its frequency shift corresponds to the nanoparticles' eigenvibration frequencies and depends on the sample material and particle's dimension. It was measured with the help of a Fabri-Perot interferometer in the range of dispersion 16.67 {cm}^{-1}. For ZnS, the first Stokes component frequency shift is equal to 465 GHz. Under excitation by 20 ns ruby laser pulses, the luminescence of the frozen ZnS nanoparticles' suspension was observed in two bands located at 480 nm and 510 nm. Its duration was more than 3 s.

  12. Study of microstructure and electroluminescence of zinc sulfide thin film

    NASA Astrophysics Data System (ADS)

    Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

    1998-03-01

    The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

  13. Dislocation dynamics in nanocrystalline nickel.

    PubMed

    Shan, Z W; Wiezorek, J M K; Stach, E A; Follstaedt, D M; Knapp, J A; Mao, S X

    2007-03-01

    It is believed that the dynamics of dislocation processes during the deformation of nanocrystalline materials can only be visualized by computational simulations. Here we demonstrate that observations of dislocation processes during the deformation of nanocrystalline Ni with grain sizes as small as 10 nm can be achieved by using a combination of in situ tensile straining and high-resolution transmission electron microscopy. Trapped unit lattice dislocations are observed in strained grains as small as 5 nm, but subsequent relaxation leads to dislocation recombination. PMID:17359167

  14. LASER COMPRESSION OF NANOCRYSTALLINE METALS

    SciTech Connect

    Meyers, M. A.; Jarmakani, H. N.; Bringa, E. M.; Earhart, P.; Remington, B. A.; Vo, N. Q.; Wang, Y. M.

    2009-12-28

    Shock compression in nanocrystalline nickel is simulated over a range of pressures (10-80 GPa) and compared with experimental results. Laser compression carried out at Omega and Janus yields new information on the deformation mechanisms of nanocrystalline Ni. Although conventional deformation does not produce hardening, the extreme regime imparted by laser compression generates an increase in hardness, attributed to the residual dislocations observed in the structure by TEM. An analytical model is applied to predict the critical pressure for the onset of twinning in nanocrystalline nickel. The slip-twinning transition pressure is shifted from 20 GPa, for polycrystalline Ni, to 80 GPa, for Ni with g. s. of 10 nm. Contributions to the net strain from the different mechanisms of plastic deformation (partials, perfect dislocations, twinning, and grain boundary shear) were quantified in the nanocrystalline samples through MD calculations. The effect of release, a phenomenon often neglected in MD simulations, on dislocation behavior was established. A large fraction of the dislocations generated at the front are annihilated.

  15. The growth of porous ZnO nanowires by thermal oxidation of ZnS nanowires.

    PubMed

    Hung, Chih-Cheng; Lin, Wen-Tai; Wu, Kuen-Hsien

    2011-12-01

    The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs. At 600 degrees C, polycrystalline ZnO and the crack along the (0001) interface between the ZnO epilayer and ZnS NW were observed. At 700-750 degrees C ZnS NWs transformed to ZnO NWs, meanwhile nanopores and interfacial cracks were observed in the ZnO NWs. Two factors, the evaporation of SO2 and SO3 and the stress induced by the incompatible structure at the interface of ZnO epilayer and ZnS NW, can be responsible for the formation of porous ZnO NWs from ZnS NW templates on annealing at 700-750 degrees C in air. Rapid growth of ZnO at 850 degrees C could heal the pores and cracks and thus resulted in the well-crystallized ZnO NWs. PMID:22409083

  16. Thermal spraying of nanocrystalline materials

    NASA Astrophysics Data System (ADS)

    Lau, Maggy L.

    The present research addresses the fundamental synergism between thermal spray synthesis, microstructural evolution and mechanical behavior of Ni, Inconel 718 and Fe based 316-stainless steel nanocrystalline materials. Nanocrystalline Ni powders produced by mechanical milling in liquid nitrogen were investigated under isothermal and non-isothermal conditions. Significant grain growth occurred in the case of cryomilled Ni powders even when annealing at lower temperatures (equivalent to about 0.17 Tm), indicating the poor thermal stability of these powders. The activation energy for grain growth was calculated to be 146.2 kJ/mol. The values of the time exponent, n, were very close to 4.0, implying that grain growth was controlled by grain boundary diffusion mechanism. The grain growth behavior of the nanocrystalline Ni powders under non-isothermal annealing conditions showed good correspondence between the experimental results and the theoretical simulation. The grain growth behavior of the milled Inconel 718 powders and coatings, under isothermal annealing indicated that the nanocrystalline powders and coatings exhibited thermal stability against grain growth up to 1073 K (0.67Tm). The average grain sizes of methanol milled powders after annealing at 1273 K for 1 hr, cryomilled powders, HVOF coating of the methanol milled powders and HVOF coatings of the cryomilled Inconel 718 powders were 91, 84, 137 and 102 nm, respectively. In the present study, Zener pinning of nanoscale oxides of (Cr,Fe) contributed to the stability against grain growth during thermal annealing of the nanocrystalline Inconel 718 powders and coatings. (Abstract shortened by UMI.)

  17. Hardness and microplasticity of nanocrystalline and amorphous calcium phosphate coatings

    NASA Astrophysics Data System (ADS)

    Ievlev, V. M.; Kostyuchenko, A. V.; Darinskii, B. M.; Barinov, S. M.

    2014-02-01

    The hardness of thin (1.0-4.0 μm) hydroxyapatite coatings with different structures (nanocrystalline, amorphous-crystalline, and amorphous) grown by rf magnetron sputtering on Ti and Si plates has been studied using the nanoindentation method. All the grown structures are characterized by the strain which has reversible and irreversible components. The hardness of nanocrystalline coatings (about 10 GPa) corresponds to the average hardness of hydroxyapatite single crystals. The structure of nanocrystalline coatings in the indentation zone and outside it has been investigated and changes in the structure under the indenter have been revealed using high-resolution transmission electron microscopy. From a comparison of the hardnesses of coatings with different structures and based on an analysis of the intragranular structure, it has been assumed that the plastic deformation occurs according to a dislocation-free mechanism. The plastic deformation is interpreted in terms of the cluster representation of the hydroxyapatite structure and amorphous calcium phosphates of the same elemental composition and cluster-boundary sliding during the deformation.

  18. Structural, optical and dielectric properties of lead doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Virpal; Hastir, Anita; Sharma, Sandeep; Singh, Ravi Chand

    2016-05-01

    Pure and lead doped ZnS nanoparticles have been successfully synthesized by chemical precipitation method. Structural analysis using X-ray diffraction confirms the cubic phase of ZnS and formation of an additional cubic phase of lead sulphide in lead doped ZnS nanoparticles. Increase in the band gap of the doped nanoparticles is consistent with the reduction of crystallite size which lies in the quantum confinement regime. A broad green emission was observed in photoluminescence spectra of lead doped ZnS nanoparticles. The green emission arises due to the presence of lead ions at zinc lattice sites in the host lattice of ZnS. Dielectric measurements reveal that dielectric constant is higher for the doped samples indicating that value of the dielectric constant can be tuned by adding suitable amount of the dopant although dielectric losses in these samples are higher and further investigations are required.

  19. Synthesis of cubic ZnS microspheres exhibiting broad visible emission for bioimaging applications.

    PubMed

    Sajan, P; Jayasree, R S; Agouram, S; Bushiri, M Junaid

    2016-03-01

    Biocompatible ZnS microspheres with an average diameter of 3.85 µm were grown by solvo-hydrothermal (S-H) method using water-acetonitrile-ethylenediamine (EDA) solution combination. ZnS microspheres were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Fourier transform (FT)-Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) techniques. The broad photoluminescence (PL) emissions from 380-580 nm that were seen from the ZnS microspheres attributed to the increase in carrier concentration, as understood from the observed intense Raman band at 257 cm(-1). Cytotoxicity and haemocompatibility investigations of these ZnS microspheres revealed its biocompatibility. ZnS microspheres, along with biological cell lines, were giving visible light emission and could be used for bioimaging applications. PMID:26278468

  20. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties. PMID:27483857

  1. Chromium Doped ZnS Nanostructures: Structural and Optical Characteristics

    NASA Astrophysics Data System (ADS)

    Gogoi, D. P.; Das, U.; Ahmed, G. A.; Mohanta, D.; Choudhury, A.; Stanciu, G. A.

    2009-06-01

    Chromium doped ZnS nanoparticles arranged in the form of fractals were fabricated by using inexpensive physico-chemical route. The Cr:ZnS samples were characterized by diffraction and spectroscopic techniques. Unexpected growth of fractals with several micrometer dimensions and of core size 1 μm (tip to tip) was confirmed through TEM micrographs. At higher magnification, we found that individual fractals consist of spherical nanoparticles of average size <30 nm. The mechanism leading to such organized structures describing fractal pattern is encountered in this work.

  2. Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

    SciTech Connect

    Bobrenko, Yu. N.; Pavelets, S. Yu. Pavelets, A. M.; Kiselyuk, M. P.; Yaroshenko, N. V.

    2010-08-15

    The formation of thin high- and low-resistivity layers in the space-charge region of Cu{sub 1.8}S-CdS and Cu{sub 1.8}S-ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.

  3. Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

    PubMed

    Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

    2012-06-01

    Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation. PMID:22905536

  4. Strong green luminescence of Ni2+-doped ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Yang, P.; Lü, M.; Xü, D.; Yuan, D.; Chang, J.; Zhou, G.; Pan, M.

    ZnS nanoparticles doped with Ni2+ have been obtained by chemical co-precipitation from homogeneous solutions of zinc and nickel salt compounds, with S2- as precipitating anion, formed by decomposition of thioacetamide (TAA). The average size of particles doped with different mole ratios, estimated from the Debye-Scherrer formula, is about 2-2.5 nm. The nanoparticles could be doped with nickel during synthesis without altering the X-ray diffraction pattern. A Hitachi M-850 fluorescence spectrophotometer reveals the emission spectra of samples. The absorption spectra show that the excitation spectra of Ni-doped ZnS nanocrystallites are almost the same as those of pure ZnS nanocrystallites (λex=308-310 nm). Because a Ni2+ luminescent center is formed in ZnS nanocrystallites, the photoluminescence intensity increases with the amount of ZnS nanoparticles doped with Ni2+. Stronger and stable green-light emission (520 nm) (its intensity is about two times that of pure ZnS nanoparticles) has been observed from ZnS nanoparticles doped with Ni2+.

  5. Low-temperature phase transition of ZnS: The critical role of ZnO

    SciTech Connect

    Lin, Po-Chang; Hua, Chi Chung; Lee, Tai-Chou

    2012-10-15

    Wurtzite zinc sulfide (WZ-ZnS) is a valuable wide-band-gap semiconductor. However, it is difficult to synthesize due to its high transition temperature (1020 Degree-Sign C). This study investigates the formation of WZ-ZnS particles using a ZnO template. Various phase structures of ZnS with the same size but different levels of ZnO content are generated during the annealing process. The transition temperature can be lowered significantly to below 350 Degree-Sign C. Furthermore, when the powders of ZnO and zinc-blende ZnS are mixed, large ZnS particles are not induced by ZnO to transform into WZ-ZnS. The results strongly suggest that grain size is an essential but not sufficient factor in the formation of WZ-ZnS at lower temperatures. - Graphical abstract: By controlling pH of the precursor, wurtzite ZnS particles can be generated at {approx}350 Degree-Sign C. The ZnO-template mechanism was proposed and discussed. Highlights: Black-Right-Pointing-Pointer Wurtzite ZnS particles were prepared by using simple wet chemistry. Black-Right-Pointing-Pointer pH of the precursor solution was adjusted to decrease the phase transition temperature of ZnS. Black-Right-Pointing-Pointer ZnO-template-inducing mechanism of ZnS phase transition was proposed and discussed.

  6. Nanocrystalline diamond for medicine

    NASA Astrophysics Data System (ADS)

    Mitura, Stanislaw

    1997-06-01

    The unique properties of thin amorphous diamond layers make them perspective candidates for producing advanced micro- electronic devices, coatings for cutting tools and optics. Moreover, due to the highest bicompatibility of carbon resulting from the presence of this element in human body, it appears to be a potential biomaterial. Until present the amorphous diamond has found industrial applications in some areas. One of the applications of the carbon layers are coatings for medical implants. The studies of carbon films as coatings for implants in surgery were aimed on the investigations of biological resistance of implants, histopathological investigations on laboratory animals, tests of corrosion resistance, measurements of mechanical properties and a breakdown test in Tyrod solution. The current state of published work in the subject is reviewed in the paper together with a discussion concerning classification of this material.

  7. Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials.

    PubMed

    Faghaninia, Alireza; Bhatt, Kunal Rajesh; Lo, Cynthia S

    2016-08-10

    Alloyed zinc sulfide (ZnS) has shown promise as a relatively inexpensive and earth-abundant transparent conducting material (TCM). Though Cu-doped ZnS has been identified as a high-performing p-type TCM, the corresponding n-doped ZnS has, to date, been challenging to synthesize in a controlled manner; this is because the dopant atoms compete with hole-inducing zinc vacancies near the conduction band minimum as the most thermodynamically stable intrinsic point defects. We thus aim to identify the most promising n-type ZnS-based TCM, with the optimal combination of physical stability, transparency, and electrical conductivity. Using a relatively new method for calculating the free energy of both the sphalerite (cubic) and wurtzite (hexagonal) phases of undoped and doped ZnS, we find that doped ZnS is more stable in the hexagonal structure. This, for the first time, fundamentally explains previous experimental observations of the coexistence of both phases in doped ZnS; hence, it profoundly impacts future work on sulfide TCMs. We also employ hybrid density functional theory calculations and a new carrier transport model, AMSET (ab initio model for mobility and Seebeck coefficient using the Boltzmann transport equation), to analyze the defect physics and electron mobility of the different cation- (B, Al, Ga, In) and anion-doped (F, Cl, Br, I) ZnS, in both the cubic and hexagonal phases, at various dopant compositions, temperatures, and carrier concentrations. Among all doped ZnS candidates, Al-doped ZnS (AZS) exhibits the highest dopant solubility, largest electronic band gap, and highest electrical conductivity of 3830, 1905, and 321 S cm(-1), corresponding to the possible carrier concentrations of n = 10(21), 10(20), and 10(19) cm(-3), respectively, at the optimal 6.25% dopant concentration of Al and the temperature of 300 K. PMID:27477188

  8. Nanocrystalline films for gas-reactive applications

    DOEpatents

    Eastman, Jeffrey A.; Thompson, Loren J.

    2004-02-17

    A gas sensor for detection of oxidizing and reducing gases, including O.sub.2, CO.sub.2, CO, and H.sub.2, monitors the partial pressure of a gas to be detected by measuring the temperature rise of an oxide-thin-film-coated metallic line in response to an applied electrical current. For a fixed input power, the temperature rise of the metallic line is inversely proportional to the thermal conductivity of the oxide coating. The oxide coating contains multi-valent cation species that change their valence, and hence the oxygen stoichiometry of the coating, in response to changes in the partial pressure of the detected gas. Since the thermal conductivity of the coating is dependent on its oxygen stoichiometry, the temperature rise of the metallic line depends on the partial pressure of the detected gas. Nanocrystalline (<100 nm grain size) oxide coatings yield faster sensor response times than conventional larger-grained coatings due to faster oxygen diffusion along grain boundaries rather than through grain interiors.

  9. N2 Laser Induced Photoluminescence Emission in (ZnS: ZnO):Cu Phosphors

    NASA Astrophysics Data System (ADS)

    Muraleedharan, R.; Khokhar, M. S. K.; Namboodiri, V. P.; Girijavallabhan, C. P.

    Nitrogen laser induced photoluminescence (PL) emissions from (ZnS: ZnO):Cu powder phosphors have been carried out under varying conditions of sample preparation. The conditions for optimum efficiency of PL emission in (ZnS: ZnO):Cu phosphors and their spectral characteristics have been investigated. The emission peak in the PL spectra was found to shift towards longer wavelengths side as the concentrations of ZnO in (ZnS: ZnO) mixture was varied from 0% to 100%. The mechanism of PL emission in the above phosphor is explained on the basis of classical “Schon-Klassen” model.

  10. Fabrication and charaterization of silica nanocoatings on ZnS phosphor particles

    NASA Astrophysics Data System (ADS)

    Yuan, Jiongliang; Kajiyoshi, Koji; Sasaoka, Hideki; Nishimura, Kazuhito

    2007-03-01

    With the addition of the cationic surfactant, cetyltrimethylammonium chloride (CTAC), continuous and uniform silica nanocoatings on ZnS phosphors have been successfully obtained. The coatings are proven to cover ZnS phosphors completely by using transmission electron microscopy (TEM), zeta potential and x-ray photoelectron spectroscopy (XPS) analysis. The XPS and Fourier transform infrared red (FT-IR) spectroscopy results provide evidence of the presence of Zn-O-Si bonds between the silica coatings and ZnS phosphors. It is suggested that the bridging effect of CTAC favours the formation of silica coatings, and Zn-O-Si bonds are formed during the annealing procedure.

  11. Synthesis and Characteristics of ZnS Nanospheres for Heterojunction Photovoltaic Device

    NASA Astrophysics Data System (ADS)

    Chou, Sheng-Hung; Hsiao, Yu-Jen; Fang, Te-Hua; Chou, Po-Hsun

    2015-06-01

    The synthesis of ZnS nanospheres produced using the microwave hydrothermal method was studied. The microstructure and surface and optical properties of ZnS nanospheres on glass were characterized using scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, and ultraviolet-visible spectroscopy. The influence of deposition time on the transmission and photovoltaic performance was determined. The power conversion efficiency of an Al-doped ZnO/ZnS nanosphere/textured p-Si device improved from 0.93 to 1.77% when the thickness of the ZnS nanostructured film was changed from 75 to 150 nm.

  12. Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation

    SciTech Connect

    Zheng, X. J.; Yu, G. C.; Chen, Y. Q.; Mao, S. X.; Zhang, T.

    2010-11-15

    The photoinduced stiffening (PIS) and photoplastic effect (PPE) of ZnS individual nanobelt (NB) were observed by using a nanoindenter in conjunction with an incident ultraviolet (UV) light source system. The results show that the elastic modulus and hardness of ZnS individual NB under UV illumination are at least 32% and 20% larger than those in darkness. The mechanisms of PIS and PPE are interpreted by the increase in electronic strain and Peierls barrier due to the photogeneration of free carriers in ZnS individual NB. The research may offer useful guidelines to the application of optoelectronic devices based on individual nanostructures.

  13. Method of making nanocrystalline alpha alumina

    DOEpatents

    Siegel, Richard W.; Hahn, Horst; Eastman, Jeffrey A.

    1992-01-01

    Method of making selected phases of nanocrystalline ceramic materials. Various methods of controlling the production of nanocrystalline alpha alumina and titanium oxygen phases are described. Control of the gas atmosphere and use of particular oxidation treatments give rise to the ability to control the particular phases provided in the aluminum/oxygen and titanium/oxygen system.

  14. Study on Photocatalytic Degradation of 2,4-Dichlorophenol by ZnS Microsphere.

    PubMed

    Lv, Xiangying; Wang, Yonghao; Wang, Yongjing; Lin, Zhang

    2016-01-01

    The self-supported ZnS microsphere composed of interwoven nanosheets was synthesized by hydrothermal method. The as-prepared ZnS powders were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The photocatalytic activity of the fabricated ZnS powders was evaluated by the degradation of 2,4-dichlorophenol (DCP) under UV light. Effects of DCP initial concentration, ZnS dosage, solution pH, light source, and dissolved oxygen on DCP photocatalytic degradation efficiency were investigated and optimized systematically. Results demonstrated that 53% of DCP could be effectively degraded under the optimal experimental conditions. Finally, high-performance liquid chromatography (HPLC) and gas chromatography-mass spectrometry (GC-MS) were used to analyze the degradation products. Based on the experimental results obtained, a prob- able degradation pathway was proposed. PMID:27398569

  15. Influence of Cu ion implantation on the microstructure and cathodoluminescence of ZnS nanostructures

    NASA Astrophysics Data System (ADS)

    Shang, L. Y.; Zhang, D.; Liu, B. Y.

    2016-07-01

    The microstructure and optical properties of as-synthesized and Cu ion implanted ZnS nanostructures with branched edges are studied by using high-resolution transmission electron microscope (TEM) and spatially-resolved cathodoluminescence measurement. Obvious crystalline deterioration has been observed in Cu-doped ZnS nanostructures due to the invasion of Cu ions into ZnS lattice. It was found that the optical emissions of ZnS nanostructures can be selectively modified through the control of Cu ion dose and subsequent heat treatment. An increase of Cu dopant content will lead to an apparent red-shift of the intrinsic band-gap emission in the UV range and the broadening of defect-related emission in visible range. The influences of Cu ion implantation on the microstructure and related optical properties were discussed.

  16. Micro-emulsion-assisted synthesis of ZnS nanospheres and their photocatalytic activity

    SciTech Connect

    Li Yao; He Xiaoyan; Cao Minhua

    2008-11-03

    ZnS nanospheres with rough surface were synthesized by using a micro-emulsion-assisted solvothemal process. The molar ratio of [water]/[surfactant] played an important role in controlling the size of the ZnS nanospheres. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), field emission-scanning electron microscope (FE-SEM), and selected area electron diffraction (SAED) were used for the characterization of the resulting ZnS nanospheres. A possible formation mechanism was proposed. These ZnS nanospheres exhibited a good photocatalytic activity for degradation of an aqueous p-nitrophenol solution and the total organic carbon (TOC) of the degradation product has also been investigated.

  17. Synthesis and spectroscopic investigations of Cu- and Pb-doped colloidal ZnS nanocrystals.

    PubMed

    Ehlert, Oliver; Osvet, Andres; Batentschuk, Miroslaw; Winnacker, Albrecht; Nann, Thomas

    2006-11-23

    A novel organometallic synthesis method for the preparation of colloidal ZnS nanoparticles is presented. This method enables the synthesis of undoped ZnS nanocrystals as well as doping with Cu, Pb, or both. The particles can be covered with an undoped layer of ZnS, forming core/shell-type particles with the ZnS:Pb, ZnS:Cu, or ZnS:Cu,Pb cores. The particles were characterized via TEM, XRD, dynamic light scattering, and optical spectroscopy. We investigated the extrinsic surface defects and their coverage with an additional ZnS layer in detail by temperature-dependent luminescence and luminescence lifetime spectroscopy. PMID:17107162

  18. Synthesis and different property of yttrium doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Khawal, H. A.; Raskar, N. D.; Gawai, U. P.; Dole, B. N.

    2016-05-01

    Yttrium doped ZnS samples Zn1-xYxS with nominal compositions (x = 0.00, 0.04 and 0.06) were synthesized by a chemical co - precipitation route at room temperature. The synthesized Zn1-xYxS nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and UV-VIS spectrometer. XRD patterns revealed that entire peaks corresponding to the various planes of cubic zinc blend structure with no segregation of Y. The lattice parameters were calculated for the Y doped ZnS using XRD data and it found to be slightly smaller than pure ZnS, which indicate substitution of Y in to ZnS lattice. The average crystallite size was calculated using Debye - Scherrer's formula for pure and Y doped ZnS samples. It is observed that grain size is in the range 30 to 12 nm. Band gap of Y doped ZnS nanoparticles has been calculated using UV-Vis spectrometer. It is found that the band gap decreases as content of Y increases, It may be due the smaller average grain size or ionic radii. The functional groups and chemical interactions of Y substituted Zinc sulfide samples were detected peaks using FTIR spectra and observed the presence of functional groups in the samples. It outlines the formation of ZnS with the stretching vibrational mode around at 511 cm-1. It is evidently confirmed from FTIR spectra that yttrium substitutes into ZnS lattice.

  19. A study of the optical properties and adhesion of zinc sulfide anti-reflection thin film coated on a germanium substrate

    NASA Astrophysics Data System (ADS)

    Firoozifar, S. A. R.; Behjat, A.; Kadivar, E.; Ghorashi, S. M. B.; Zarandi, M. Borhani

    2011-11-01

    To conduct this study, zinc sulfide (ZnS) thin films deposited on germanium (Ge) substrates were prepared by an evaporation method. The effects of deposition rate and annealing on the optical properties and adhesion of the ZnS thin films were investigated. The transmission intensity and the X-ray diffraction (XRD) pattern of the samples showed that the transmittance of the samples decreases by increasing the evaporation rates. However, with the increase of the annealing temperature, crystallinity of the thin films improves which, in turn, results in the enhancement of the transmission intensity in a far infrared region. The maximum grain size was obtained at the annealing temperature of 225 °C. Our experimental results also show that evaporation rate and annealing influences the adhesion of ZnS thin films to Ge substrates.

  20. Facile production of ZnS quantum dot nanoparticles by Saccharomyces cerevisiae MTCC 2918.

    PubMed

    Sandana Mala, John Geraldine; Rose, Chellan

    2014-01-20

    Microbial synthesis of nanoparticles is a green route towards ecofriendly measures to overcome the toxicity and non-applicability of nanomaterials in clinical uses obtained by conventional physical and chemical approaches. Nanoparticles in the quantum regime have remarkable characteristics with excellent applicability in bioimaging. Yeasts have been commercially exploited for several industrial applications. ZnS nanoparticles as semiconductor quantum dots have mostly been synthesized by bacterial species. Here in, we have attempted to produce ZnS nanoparticles in quantum regime by Saccharomyces cerevisiae MTCC 2918 fungus and characterize its size and spectroscopic properties. Intracellular ZnS nanoparticles were produced by a facile procedure and freeze thaw extraction using 1mM zinc sulfate. The ZnS nanoparticles showed surface plasmon resonance band at 302.57nm. The ZnS nanoparticles were in low yield and in the size range of 30-40nm. Powder XRD analysis revealed that the nanoparticles were in the sphalerite phase. Photoluminescence spectra excited at 280nm and 325nm revealed quantum confinement effects. This suggests that yeasts have inherent sulfate metabolizing systems and are capable fungal sources to assimilate sulfate. Further insights are required to identify the transport/reducing processes that may have caused the synthesis of ZnS nanoparticles such as an oxidoreductase enzyme-mediated mechanism. PMID:24316439

  1. Preparation and characterization of surface-coated ZnS nanoparticles

    SciTech Connect

    Chen, S.; Liu, W.

    1999-11-09

    ZnS nanoparticles coated with di-n-hexadecyldithiophosphate (DDP) were chemically synthesized. The structure of the prepared ZnS nanoparticles was investigated by means of transmission electron microscopy, electron diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The thermal stability of DDP coated on nanoparticles was compared with that of pyridinium di-n-hexadecyldithiophosphate (PyDDP) using a thermogravimetric analyzer. The tribiological properties of ZnS nanoparticles as an additive in tetradecane were investigated by a SRV tester in a ball-on-disk configuration. DDP-coated ZnS nanoparticles, with an average diameter of about 4 nm, are able to prevent water adsorption, and oxidation and are capable of being dispersed stably in organic solvents or mineral oil. Thermal stability of DDP coating on ZnS nanoparticles was superior to that of PyDDP. Wear tests show that DDP-coated ZnS nanoparticles as additive in tetradecane are capable of reducing friction and wear of steel.

  2. Luminescence characteristics of ZnS nanoparticles co-doped with Ni 2+ and Mn 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xu, Dong; Yuan, Duorong; Song, Chunfeng; Liu, Suwen; Cheng, Xiufeng

    2003-12-01

    ZnS nanoparticles doped with Ni 2+ and Mn 2+ have been prepared by co-precipitation from homogeneous solutions of Zn, Ni and Mn salt compounds, with S 2- as precipitating anion formed by decomposition of thioacetamide (TAA). X-ray diffraction analysis shows that the average crystalline particle size of the doped and undoped ZnS nanometer scale samples is about 2-4 nm. A novel luminescent property has been observed in the photoluminescence (PL) spectra of the ZnS nanoparticles co-doped with Ni 2+ and Mn 2+. The ZnS nanoparticles can be doped with Ni 2+ and Mn 2+ during synthesis without altering the X-ray diffraction pattern. However, the emission wavelengths (with a color range from blue to green, λem=475-540 nm) and PL intensities of the co-doped samples vary with changing the impurity mole ratios of Ni 2+ and Mn 2+ in the co-doped samples. When the mole ratios of Ni 2+ and Mn 2+ in the co-doped sample are 0.3% and 2.0%, respectively, the relative fluorescence intensity of the co-doped samples is about four times of that of un-doped ZnS nanocrystals. The PL properties of the co-doped samples are dramatically different from those of Ni 2+- and Mn 2+-doped ZnS nanocrystals.

  3. Photoluminescence study of Mn doped ZnS nanoparticles prepared by co-precipitation method

    NASA Astrophysics Data System (ADS)

    Deshpande, M. P.; Patel, Kamakshi; Gujarati, Vivek P.; Chaki, S. H.

    2016-05-01

    ZnS nanoparticles co-doped with different concentration (5,10,15%) of Mn were synthesized using polyvinylpyrrolidone (PVP) as a capping agent under microwave irradiation. We confirmed doping of Mn in the host ZnS by EDAX whereas powder X-ray diffractogram showed the cubic zinc blende structure of all these samples. TEM images did showed agglomeration of particles and SAED pattern obtained indicated polycrystalline nature. From SAED pattern we calculated lattice parameter of the samples which have close resemblance from that obtained from XRD pattern. The band gap values of pure and doped ZnS nanoparticles were calculated from UV-Visible absorption spectra. ZnS itself is a luminescence material but when we dope it with transition metal ion such as Mn, Co, and Cu they exhibits strong and intense luminescence in the particular region. The photoluminescence spectra of pure ZnS nanoparticles showed an emission at 421 and 485nm which is blue emission which was originated from the defect sites of ZnS itself and also sulfur deficiency and when doped with Mn2+ an extra peak with high intensity was observed at 530nm which is nearly yellow-orange emission which isrelated to the presence of Mn in the host lattice.

  4. Hepatotoxicity assessment of Mn-doped ZnS quantum dots after repeated administration in mice.

    PubMed

    Yang, Yanjie; Lv, Shuang-Yu; Yu, Bianfei; Xu, Shuang; Shen, Jianmin; Zhao, Tong; Zhang, Haixia

    2015-01-01

    Doped ZnS quantum dots (QDs) have a longer dopant emission lifetime and potentially lower cytotoxicity compared to other doped QDs. The liver is the key organ for clearance and detoxification of xenobiotics by phagocytosis and metabolism. The present study was designed to synthesize and evaluate the hepatotoxicity of Mn-doped ZnS QDs and their polyethylene glycol-coated counterparts (1 mg/kg and 5 mg/kg) in mice. The results demonstrated that daily injection of Mn-doped ZnS QDs and polyethylene glycol-coated QDs via tail vein for 7 days did not influence body weight, relative liver weight, serum aminotransferases (alanine aminotransferase and aspartate aminotransferase), the levels of antioxidant enzymes (catalase, glutathione peroxidase, and superoxide dismutase), or malondialdehyde in the liver. Analysis of hepatocyte ultrastructure showed that Mn-doped ZnS QDs and polyethylene glycol-coated QDs mainly accumulated in mitochondria at 24 hours after repeated intravenous injection. No damage to cell nuclei or mitochondria was observed with either of the QDs. Our results indicate that Mn-doped ZnS QDs did not cause obvious damage to the liver. This study will assist in the development of Mn-doped ZnS QDs-based bioimaging and biomedical applications in the future. PMID:26396512

  5. ZnS nanosheets: Egg albumin and microwave-assisted synthesis and optical properties

    NASA Astrophysics Data System (ADS)

    Tian, Xiuying; Wen, Jin; Hu, Jilin; Chen, Zhanjun; Wang, Shumei; Peng, Hongxia; Li, Jing

    2016-09-01

    ZnS nanosheets were prepared via egg albumin and microwave-assisted method. The phases, crystalline lattice structures, morphologies, chemical and optical properties were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), field-emission scanning electron microscope(FE-SEM), selected area electron diffraction (SAED), Fourier transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) spectroscopy and fluorescence(FL) spectrometer and growth mechanism of ZnS nanosheets was investigated. The results showed that all samples were pure cubic zinc blende with polycrystalline structure. The width of ZnS nanosheets with a rectangular nanostructure was in the range of 450-750 nm. The chemical interaction existed between egg albumin molecules and ZnS nanoparticles via the amide/carboxylate group. The band gap value calculated was 3.72 eV. The band at around 440 nm was attributed to the sulfur vacancies of the ZnS nanosheets. With increasing volumes of egg albumin, the photoluminescence (PL) intensity of ZnS samples firstly increased and then decreased, attributed to concentration quenching.

  6. Microwave-assisted low temperature synthesis of wurtzite ZnS quantum dots

    SciTech Connect

    Shahid, Robina; Toprak, Muhammet S.; Muhammed, Mamoun

    2012-03-15

    In this work we report, for the first time, on microwave assisted synthesis of wurtzite ZnS quantum dots (QDs) in controlled reaction at temperature as low as 150 Degree-Sign C. The synthesis can be done in different microwave absorbing solvents with multisource or single source precursors. The QDs are less than 3 nm in size as characterized by transmission electron microscopy (TEM) using selected area electron diffraction (SAED) patterns to confirm the wurtzite phase of ZnS QDs. The optical properties were investigated by UV-Vis absorption which shows blue shift in absorption compared to bulk wurtzite ZnS due to quantum confinement effects. The photoluminescence (PL) spectra of QDs reveal point defects related emission of ZnS QDs. - Graphical abstract: Microwave assisted synthesis of wurtzite ZnS quantum dots (QDs) have been achieved in controlled reaction at temperature as low as 150 Degree-Sign C. The synthesis was performed in different microwave absorbing solvents with multisource or single source precursors for very short reaction periods due to effective heating with microwaves. Highlights: Black-Right-Pointing-Pointer Wurtzite a high temperature phase of ZnS was synthesized at low temperature. Black-Right-Pointing-Pointer Low temperature synthesis was possible because of the use of microwave absorbing solvents. Black-Right-Pointing-Pointer Capping agent was used to control the size of Quantum Dots. Black-Right-Pointing-Pointer Two different systems were developed using single molecular precursor and multisource precursors.

  7. Magnetic properties of ZnS doped with noble metals (X = Ru, Rh, Pd, and Ag)

    NASA Astrophysics Data System (ADS)

    Tan, Zhiyun; Xiao, Wenzhi; Wang, Lingling; Yang, Youchang

    2012-12-01

    Density functional theory calculations are carried out to study the electronic structures and magnetic properties in zinc-blende structure ZnS doped with nonmagnetic noble metals (X = Ru, Rh, Pd, and Ag). Results show robust magnetic ground states for X-doped ZnS. The total magnetic moments are about 2.0, 3.0, and 2.0 μB per supercell for the Ru-, Rh-, and Pd-doped ZnS, respectively. As the atomic number of X element increases, the local magnetic moment tends toward delocalize and the hybridization between X-4d and S-3p states become stronger. This trend is strongly related to the difference in electronegativity between the substitutional X and the cation in the ZnS host. For Ag-doped ZnS, both non-spin- and spin-polarized calculations yield nearly equal total energy. The substitution of Zn in ZnS parent material by the nonmagnetic 4d transition-metals may lead to half-metallic ferromagnetism which stems from the hybridization between X-4d and S-3p states and could be attributed to a double-exchange mechanism. Curie temperature values are estimated using mean-field approximation.

  8. Hepatotoxicity assessment of Mn-doped ZnS quantum dots after repeated administration in mice

    PubMed Central

    Yang, Yanjie; Lv, Shuang-Yu; Yu, Bianfei; Xu, Shuang; Shen, Jianmin; Zhao, Tong; Zhang, Haixia

    2015-01-01

    Doped ZnS quantum dots (QDs) have a longer dopant emission lifetime and potentially lower cytotoxicity compared to other doped QDs. The liver is the key organ for clearance and detoxification of xenobiotics by phagocytosis and metabolism. The present study was designed to synthesize and evaluate the hepatotoxicity of Mn-doped ZnS QDs and their polyethylene glycol-coated counterparts (1 mg/kg and 5 mg/kg) in mice. The results demonstrated that daily injection of Mn-doped ZnS QDs and polyethylene glycol-coated QDs via tail vein for 7 days did not influence body weight, relative liver weight, serum aminotransferases (alanine aminotransferase and aspartate aminotransferase), the levels of antioxidant enzymes (catalase, glutathione peroxidase, and superoxide dismutase), or malondialdehyde in the liver. Analysis of hepatocyte ultrastructure showed that Mn-doped ZnS QDs and polyethylene glycol-coated QDs mainly accumulated in mitochondria at 24 hours after repeated intravenous injection. No damage to cell nuclei or mitochondria was observed with either of the QDs. Our results indicate that Mn-doped ZnS QDs did not cause obvious damage to the liver. This study will assist in the development of Mn-doped ZnS QDs-based bioimaging and biomedical applications in the future. PMID:26396512

  9. Surface-enhanced Raman scattering of carbon nanotubes by decoration of ZnS nanoparticles.

    PubMed

    Chang, Jingbo; Lee, Jae-Hyeok; Najeeb, Choolakadavil Khalid; Kim, Jae-Ho

    2011-07-01

    ZnS nanoparticles anchored on the single-walled carbon nanotubes (SWNTs) were fabricated by a chemical vapor deposition (CVD) method. The CVD method shows no selectivity for growth of ZnS nanoparticles on types and defects of the SWNTs, and thus ensures the uniform decoration of all SWNTs on the substrate. ZnS nanoparticles with a diameter of 10 nm were decorated on the SWNTs surface with an interparticle distance of about 20 nm. This method provides the possibility to realize the optimal configurations of ZnS nanoparticles on SWNTs for obtaining surface-enhanced Raman spectroscopy (SERS) of SWNTs. Investigations of mechanism reveal that charge transfer (a small amount of excitation electrons) from ZnS nanoparticles to SWNTs weakly affects Raman intensity, and the coupled surface plasmon resonance (SPR) formed from plenty of excitation electrons on the surface of ZnS nanoparticles contributes to the strong surface enhancement. It would be an alternative approach for SERS after metal (normally gold or silver) nanoparticles' decoration on the SWNTs surface. PMID:22121696

  10. Facile synthesis of water-soluble ZnS quantum dots with strong luminescent emission and biocompatibility

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Liu, Yingbo; Sun, Shuqing

    2013-10-01

    ZnS quantum dots (QDs) are among the most promising emerging fluorescent materials for biolabeling. High-quality colloidal ZnS QDs were synthesized via a new facile chemical precipitation method using the mixture of ethylene glycol (EG) and water as the solvent. The phase structure and morphology of the ZnS QDs were characterized by X-ray powder diffraction and high resolution transmission electron microscopy. The synthesized ZnS QDs have a cubic zinc blende structure with monodispered and small particles. ZnS QDs easily dispersed in water to form stable and clear colloids and the strong tunable trap state emissions from 452 to 516 nm were achieved by varying the reaction time. The hemolysis assay was performed to evaluate the biocompatibility of the ZnS QDs.

  11. Multifunctionality of nanocrystalline lanthanum ferrite

    NASA Astrophysics Data System (ADS)

    Rai, Atma; Thakur, Awalendra K.

    2016-05-01

    Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ˜42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ˜3.45 m2/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanum ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO3.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.

  12. Thermal stability of nanocrystalline microstructures

    NASA Astrophysics Data System (ADS)

    Darling, Kris Allen

    The objective of the proposed research is to develop the experimental data and scientific basis that can optimize the thermodynamic stabilization of a nanoscale microstructure during consolidation of Fe powder particles through select solute diffusion to grain boundaries. Fe based alloys were high energy ball milled to produce supersaturated solid solutions with a nominal grain size of ˜10nm. Solutes such as Y, W, Ta, Ni and Zr were selected based on their propensity to grain boundary segregated in Fe. Based on preliminary heat treatments Zr was selected as the solute of choice. Upon further heat treating experiments and microstructural analysis it was found that Zr solute additions of <4at% could stabilize a nanocrystalline microstructure of <100nm at temperatures in excess of 900°C. This is in stark comparison to pure nanocrystalline Fe which shows coarsening to the micron scale after annealing above 600°C. Reduction in grain boundary energy due to Zr segregation and solute drag are proposed as mechanism responsible for the observed thermal stability. In addition to the work presented on Fe based Zr alloys supplementary research is presented on the following systems: Fe based Ni alloys, Pd 20at%Zr, Cu3Ge and CuGeO3. The addition of Ni to Fe was selected as a control. Since Ni and Fe have similar atomic radii, the elastic enthalpy of segregation of Ni in Fe is low (+1kJ/mol) and at high temperatures Ni has complete solid solubility in Fe; it is suggested that Ni will have a negligible influence in the thermal stability of nanocrystalline Fe. It was shown that at 700°C the addition of 1at% Ni produce a bimodal microstructure consisting of ˜70% abnormally grown grains and ˜30% nanocrystalline grains of 100-200nm. While these results are interesting extensive work is still needed to understand the mechanisms governing the thermal stability in this system. A presentation of the collected data is given. Pd 20 at% Zr was high energy ball milled to produce an

  13. 2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

    NASA Astrophysics Data System (ADS)

    Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

    2015-10-01

    Bi2S3/ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi2S3/ZnS composite. The results shown that Bi2S3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi2S3/ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi2S3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi2S3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi2S3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process.

  14. Micromechanics Modeling of Fracture in Nanocrystalline Metals

    NASA Technical Reports Server (NTRS)

    Glaessgen, E. H.; Piascik, R. S.; Raju, I. S.; Harris, C. E.

    2002-01-01

    Nanocrystalline metals have very high theoretical strength, but suffer from a lack of ductility and toughness. Therefore, it is critical to understand the mechanisms of deformation and fracture of these materials before their full potential can be achieved. Because classical fracture mechanics is based on the comparison of computed fracture parameters, such as stress intlmsity factors, to their empirically determined critical values, it does not adequately describe the fundamental physics of fracture required to predict the behavior of nanocrystalline metals. Thus, micromechanics-based techniques must be considered to quanti@ the physical processes of deformation and fracture within nanocrystalline metals. This paper discusses hndamental physicsbased modeling strategies that may be useful for the prediction Iof deformation, crack formation and crack growth within nanocrystalline metals.

  15. Fiber texturing in nano-crystalline TiO2 thin films deposited at 150 °C by dc-reactive sputtering on fiber-textured [0 0 0 1] ZnO : Al substrates

    NASA Astrophysics Data System (ADS)

    Pellegrino, Giovanna; Bongiorno, Corrado; Ravesi, Sebastiano; Alberti, Alessandra

    2012-09-01

    TiO2 thin films were deposited at an effective surface temperature of 150 °C by dc-reactive magnetron sputtering on ZnO : Al oriented substrates having a fiber texture along the [0 0 0 1] axis, and studied by transmission electron microscopy and x-ray diffraction analyses. The substrate texturing was used to tailor the TiO2 structure in such a way that a porous matrix made of anatase nano-grains (10 nm in diameter) is formed instead of an amorphous layer (as observed at 150 °C on glass). Additionally, we demonstrate that, by adding an ex situ 200 °C annealing, the anatase domains also gain a fiber texture with the axes aligned to that of the substrate. The TiO2/AZO structural coupling is expected to play a crucial role for the carrier transport through the interface as required in dye-sensitized solar cells. Moreover, the low temperatures used render the process compatible with commonly used plastics substrates.

  16. Nanocrystalline diamond synthesized from C60

    SciTech Connect

    Dubrovinskaia, N.; Dubrovinsky, L.; Langehorst, F.; Jacobsen, S.; Liebske, C.

    2010-11-30

    A bulk sample of nanocrystalline cubic diamond with crystallite sizes of 5-12 nm was synthesized from fullerene C{sub 60} at 20(1) GPa and 2000 C using a multi-anvil apparatus. The new material is at least as hard as single crystal diamond. It was found that nanocrystalline diamond at high temperature and ambient pressure kinetically is more stable with respect to graphitization than usual diamonds.

  17. Synthesis, characterization and photoluminescence studies of undoped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Chandrakar, Raju Kumar; Baghel, R. N.; Chandra, V. K.; Chandra, B. P.

    2015-08-01

    The present paper reports the synthesis, characterization and photoluminescence studies of undoped ZnS nanoparticles. The ZnS nanoparticles were prepared by chemical precipitation method and characterized by X-ray diffraction (XRD), field emission gun scanning electron microscope (FEGSEM), and high resolution transmission electron microscope (HRTEM). When the concentrations of capping agent (mercaptoethanol) used are 0 M, 0.01 M, 0.025 M, 0.040 M, and 0.060 M, the sizes of the nanoparticles are 2.86 nm, 2.69 nm, 2.40 nm, 1.90 nm and 1.80 nm, respectively. This means the size of nanoparticles decreases with increasing concentration of capping agent used. The PL spectra of ZnS nanoparticles were measured for different concentrations of merceptoethanol, in which the excitation wavelength was 289 nm for all the samples. One peak is obtained in the photoluminescence (PL) of ZnS, in which the peak shifts from 468 nm to 408 nm with decreasing size of the nanocrystals. The blue emission around the peak of PL intensity is very broad and originates from the radiative recombination involving defect states in the ZnS nanocrystals. The photoluminescence spectra of ZnS nanoparticles for different capping agent concentrations reveals that the emission becomes more intensive and shift towards blue side as the size of the nanoparticles is reduced. The optical absorption spectra of the nanoparticles obtained using UV-Vis spectrophotometer shows the blue-shift with decreasing particle size. The value of band gap energy has been found to be in range 4.60-5.18 eV, which is related to the quantization effect due to small the of the particles. The measurement of exciton luminescence can be used to determine the band gap of pure ZnS crystals.

  18. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    NASA Astrophysics Data System (ADS)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  19. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    NASA Astrophysics Data System (ADS)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  20. The preparation of ACEL thin films

    NASA Astrophysics Data System (ADS)

    Vecht, Aron

    1990-05-01

    Although thin film ACEL devices have become commercially available, the number of companies producing these displays has continued to diminish. The cause of their demise was not display performance, as both sufficient brightness and efficiency has been achieved, but the low return on the heavy capital investment due to the poor yields obtained in production. In order to make ACEL thin film devices more viable, the capital investment needs to be low and/or the production yields high. Opting for relatively expensive sputtering or ALE techniques as the sole methods of fabricating EL structures, is both commercially and scientifically ill-advised. Considerable effort was spent in developing cheaper alternative techniques for thin film deposition. The main objectives of the contract can be summarized as follows: (1) to deposit high quality ZnS thin films by MOCVD, (2) to dope the ZnS thin film with Mn, (3) to deposit high quality dielectric films using a novel spray pyrolysis process, (4) to evaluate optimized insulator/ZnS-Mn/insulator structures, and (5) the fabrication of large area XY matrix ACEL structures.

  1. Grain boundaries and mechanical properties of nanocrystalline diamond films.

    SciTech Connect

    Busmann, H.-G.; Pageler, A.; Gruen, D. M.

    1999-08-06

    Phase-pure nanocrystalline diamond thin films grown from plasmas of a hydrogen-poor carbon argon gas mixture have been analyzed regarding their hardness and elastic moduli by means of a microindentor and a scanning acoustic microscope.The films are superhard and the moduli rival single crystal diamond. In addition, Raman spectroscopy with an excitation wavelength of 1064 nm shows a peak at 1438 l/cm and no peak above 1500 l/cm, and X-ray photoelectron spectroscopy a shake-up loss at 4.2 eV. This gives strong evidence for the existence of solitary double bonds in the films. The hardness and elasticity of the films then are explained by the assumption, that the solitary double bonds interconnect the nanocrystals in the films, leading to an intergrain boundary adhesion of similar strength as the intragrain diamond cohesion. The results are in good agreement with recent simulations of high-energy grain boundaries.

  2. Room temperature d0 ferromagnetism in ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Proshchenko, Vitaly; Horoz, Sabit; Tang, Jinke; Dahnovsky, Yuri

    2016-06-01

    Room temperature ferromagnetic semiconductors have a great deal of advantage because of their easy integration into semiconductor devices. ZnS nanocrystals (NCs), bulk, and surfaces exhibit d0 ferromagnetism at room temperature. The experiments reveal that NC ferromagnetism takes place at low and room temperatures only due to Zn vacancies (S vacancies do not contribute). To understand the mechanism of d0 ferromagnetism, we introduce the surface-bulk model of a nanocrystal, which includes both surface and bulk magnetizations. The calculations demonstrate that the surface has the higher than bulk magnetization. We find the mechanism of the ferromagnetism is due to sulfur s- and p-electrons in a tetrahedral crystal field. The bulk magnetic moment increases with Zn vacancy concentration at small concentrations and then goes down at larger concentrations. A surface magnetic moment behaves differently with the concentration. It is always a monotonically rising function. We find that the total NC magnetic moment increases with the size and concentration of Zn vacancies (only low concentrations). We also study the magnetization per unit cell where we find that it decreases for the surface and increases for bulk magnetism with the NC size.

  3. Investigation of Electroluminescent Degradation in doped ZnS phosphors

    NASA Astrophysics Data System (ADS)

    Bridges, Frank; Stanley, Jacob; Jiang, Yu; Ruhlen, Laurel; Willy, John; Carter, Sue

    2008-03-01

    We present optical and EXAFS data on a series of ZnS samples doped with Cu, Mn and Cl. These materials (30 micron particles) have a strong electroluminescence (EL) when subjected to a 100V square-wave voltage. At 100 kHz, the luminescence decays significantly in a 20 hr period. We show that this degradation can partially be reversed by annealing the sample and that this can be repeated several times. In addition the EL emission centers reoccur at the same points in the 30 micron particles after the anneal. The optimum annealing temperature is about 180C, but varies slightly for different wavelengths. Surprisingly an anneal at somewhat higher temperatures (240C) dramatically reduces the EL intensity. The EXAFS studies show that the local structure about Cu continues to look like CuS for ``as made", EL degraded, rejuvenated samples (annealing at 180C), and thermally degraded samples (annealed at 240C). This means that most of the Cu is in the relatively inert CuS precipitates, and does not change significantly with EL degradation or annealing. Thus the EL active sites must be dilute. We discuss some possible models.

  4. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    NASA Astrophysics Data System (ADS)

    Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

    2016-05-01

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

  5. Low temperature synthesis, photoluminescence, magnetic properties of the transition metal doped wurtzite ZnS nanowires

    SciTech Connect

    Cao, Jian; Han, Donglai; Wang, Bingji; Fan, Lin; Fu, Hao; Wei, Maobin; Feng, Bo; Liu, Xiaoyan; Yang, Jinghai

    2013-04-15

    In this paper, we synthesized the transition metal ions (Mn, Cu, Fe) doped and co-doped ZnS nanowires (NWs) by a one-step hydrothermal method. The results showed that the solid solubility of the Fe{sup 2+} ions in the ZnS NWs was about two times larger than that of the Mn{sup 2+} or Cu{sup 2+} ions in the ZnS NWs. There was no phase transformation from hexagonal to cubic even in a large quantity transition metal ions introduced for all the samples. The Mn{sup 2+}/Cu{sup 2+}/Fe{sup 2+} related emission peaks can be observed in the Mn{sup 2+},Cu{sup 2+} and Fe{sup 2+} doped ZnS NWs. The ferromagnetic properties of the co-doped samples were investigated at room temperature. - graphical abstract: The stable wurtzite ZnS:TM{sup 2+} (TM=Mn, Cu, Fe) nanowires with room temperature ferromagnetism properties were obtained. The different elongation of unit cell caused by the different doped ions was observed. Highlights: ► The transition metal ions doped wurtzite ZnS nanowires were synthesized at 180 °C. ► There was no phase transformation from hexagonal to cubic even in a large quantity introduced for all the samples. ► The room temperature ferromagnetism properties of the co-doped nanowires were investigated.

  6. Shape- and phase-controlled ZnS nanostructures and their optical properties

    SciTech Connect

    Zhou, Xin; Zeng, Xianghua; Yan, Xiaoqing; Xia, Weiwei; Zhou, Yuxue; Shen, Xiaoshuang

    2014-11-15

    Graphical abstract: (a) TEM images of the nanorods, the HRTEM images for the lower (b) and the upper (c) part of the rod in (a). - Highlights: • Stacking faults were observed for ZnS nanocrystals with the size of ∼5 nm. • Nanotwinning structures and stacking faults were observed in ZnS nanorod. • Microstructure defects were found to be formed randomly for nanocrystals and nanorods. • The 1LO phonon mode exhibits a red-shift of 6 cm{sup −1} as the particle size increases from 5 to 15 nm. - Abstract: Single-crystalline ZnS nanoparticles with a zinc-blende crystal structure have some microdefects such as stacking faults and nanotwins. In contrast, ZnS nanorods have a wurtzite crystal structure, which grows along the [0 0 0 1] direction, although some nanorods display the intergrowth of a minor zinc-blende phase and the major wurtzite phase, which forms stacking faults or zinc-blende/wurtzite ZnS nanotwins. Raman spectroscopy measurements reveal surface phonons and longitudinal optical phonons in the nanoparticles, nanorods and doublet phonons that are associated with the transversal optical phonons of the A1 and E1 modes in only the nanorods. The first-order longitudinal optical phonon mode exhibits a blueshift of 6 cm{sup −1} when the particle size increases from 5 to 15 nm, but there is no shift in the range of 15–30 nm because of quantum confinement and microdefects.

  7. Optical properties of Mn-doped ZnS semiconductor nanoclusters synthesized by a hydrothermal process

    NASA Astrophysics Data System (ADS)

    Hoa, Tran Thi Quynh; The, Ngo Duc; McVitie, Stephen; Nam, Nguyen Hoang; Vu, Le Van; Canh, Ta Dinh; Long, Nguyen Ngoc

    2011-01-01

    Undoped and Mn-doped ZnS nanoclusters have been synthesized by a hydrothermal approach. Various samples of the ZnS:Mn with 0.5, 1, 3, 10 and 20 at.% Mn dopant have been prepared and characterized using X-ray diffraction, energy-dispersive analysis of X-ray, high resolution electron microscopy, UV-vis diffusion reflection, photoluminescence (PL) and photoluminescence excitation (PLE) measurements. All the prepared ZnS nanoclusters possess cubic sphalerite crystal structure with lattice constant a = 5.408 ± 0.011 Ǻ. The PL spectra of Mn-doped ZnS nanoclusters at room temperature exhibit both the 495 nm blue defect-related emission and the 587 nm orange Mn2+ emission. Furthermore, the blue emission is dominant at low temperatures; meanwhile the orange emission is dominant at room temperature. The Mn2+ ion-related PL can be excited both at energies near the band-edge of ZnS host (the UV region) and at energies corresponding to the Mn2+ ion own excited states (the visible region). An energy schema for the Mn-doped ZnS nanoclusters is proposed to interpret the photoluminescence behaviour.

  8. Photoluminescence characteristics of ZnS nanocrystallites doped with Ti3+and Ti4+

    NASA Astrophysics Data System (ADS)

    Yang, P.; Lü, M.; Xu, D.; Yuan, D.; Song, C.; Zhou, G.

    Direct synthesis of ZnS nanocrystallites doped with Ti3+ or Ti4+ by precipitation has led to novel photoluminescence properties. Detailed X-ray diffraction (XRD), fluorescence spectrophotometry, UV-vis spectrophotometry and X-ray photoelectron spectroscopy (XPS) analysis reveal the crystal lattice structure, average size, emission spectra, absorption spectra and composition. The average crystallite size doped with different mole ratios, estimated from the Debye-Scherrer formula, is about 2.6+/-0.2 nm. The nanoparticles can be doped with Ti3+ and Ti4+ during the synthesis without the X-ray diffraction pattern being altered. The strong and stable visible-light emission has been observed from ZnS nanocrystallites doped with Ti3+ (its maximum fluorescence intensity is about twice that of undoped ZnS nanoparticles). However, the fluorescence intensity of the ZnS nanocrystallites doped with Ti4+ is almost the same as that of the undoped ZnS nanoparticles. The emission peak of the undoped sample is at 440-450 nm. The emission spectrum of the doped sample consists of two emission peaks, one at 420-430 nm and the other at 510 nm.

  9. The Combustion Synthesis Zns Doped Materials to Create Ultra-Electroluminscent Materials in Microgravity

    NASA Astrophysics Data System (ADS)

    Castillo, Martin; Steinberg, Theodore

    2012-07-01

    Self-propagating high temperature synthesis (SHS) utilises a rapid exothermic process involving high energy and nonlinearity coupled with a high cooling rate to produce materials formed outside of normal equilibrium boundaries thus possessing unique properties. The elimination of gravity during this process allows capillary forces to dominate mixing of the reactants which results in a superior and enhanced homogeneity in the product materials. ZnS type materials have been previously conducted in reduced gravity and normal gravity. It has been claimed in literature that a near perfect phases of ZnS wurtzite was produced. Although, the SHS of this material is possible at high pressures, there have been no advancements in refining this structure to create ultra-electroluminescent materials. Utilising this process with ZnS doped with Cu, Mn, or rare earth metals such as Eu and Pr leads to electroluminescence properties, thus making this an attractive electroluminescent material. The work described here will revisit the SHS of ZnS and will re-examine the work performed in both normal gravity and in reduced gravity within the Queensland University of Technology Drop Tower Facility. Quantifications in the lattice parameters, crystal structures, and phases produced are presented to further explore the unique structure-property performance relationships produced from the SHS of ZnS materials.

  10. Photoluminescence properties of ZnS nanoparticles co-doped with Pb 2+ and Cu 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xü, Dong; Yuan, Duolong; Zhou, Guangjun

    2001-03-01

    Nanometer-scale ZnS, ZnS:Cu, ZnS:Pb, and ZnS co-doped with Cu 2+ and Pb 2+ have been synthesized using a chemical precipitation method. X-ray diffraction analysis shows that the diameter of the particles is 2-4 nm. These nanocrystals can be doped with copper and lead during the synthesis without altering the X-ray diffraction pattern. However, doping has shifted the luminescence to 530 nm (Cu 2+-doped) and 500-550 nm (co-doped with Cu 2+ and Pb 2+). In the case of ZnS:Pb nanocrystals, a relatively broad emission band (color range from blue to yellow) has been observed and its excitation wavelength shows a red shift. The photoluminescence intensity increases as the ZnS nanoparticles co-doped with Pb 2+ and Cu 2+. The results strongly suggest that doped ZnS nanocrystals, especially two kinds of metals activated ZnS nanocrystals, form a new class of luminescent materials.

  11. Band engineering of ZnS by codoping for visible-light photocatalysis

    NASA Astrophysics Data System (ADS)

    Wan, Hui; Xu, Liang; Huang, Wei-Qing; Huang, Gui-Fang; He, Chao-Ni; Zhou, Jia-Hui; Peng, P.

    2014-08-01

    Codoping is demonstrated as an efficient approach to narrow the band gap of ZnS and enhance its photocatalytic activity. Herein, we perform the density-function theory calculations of ZnS by codoping of X (N, F) with transition metals (TM = V, Cu). The band gap is reduced in four different types of codoped ZnS. In particular, CuZnFS codoping, a charge-compensated donor-acceptor pair, leads to an about 32 % reduction of the energy gap, thus extending the absorption edge to visible-light region. The band gap reduction is due to the upshift of the top valence band comprised with the delocalized hybridizing levels of Cu 3d and S 3p states, and the downshift of the bottom conduction band consisting of F 2s states. Moreover, the larger value of m e*/ m h* in CuZnFS-ZnS would result in a lower recombination rate of the electron-hole pairs. Both band gap reduction and low recombination rate are critical elements for efficient light-to-current conversion in codoped ZnS. These findings raise the prospect of using codoped ZnS with specifically engineered electronic properties in a variety of photocatalytic applications.

  12. Scintillation and luminescence in transparent colorless single and polycrystalline bulk ceramic ZnS

    SciTech Connect

    McCloy, John S.; Bliss, Mary; Miller, Brian W.; Wang, Zheming; Stave, Sean C.

    2015-01-01

    ZnS:Ag is a well-known extremely bright scintillator used in powder form for α-particle detection and, mixed with powdered LiF, for thermal neutron detection. Recently, we discovered some commercial bulk colorless and transparent, single-crystal and polycrystalline (chemical vapor-deposited) ZnS forms that scintillate in response to α-particles. The scintillation light transmits through the sample thickness (mm), challenging the commonly held assumption that ZnS is opaque to its own scintillation light. Individual α-particle events were imaged in space and time using a charged-particle camera originally developed for medical imaging applications. Photoluminescence (PL) and PL excitation show that scintillating bulk ZnS likely depends on different electronic defects than commercial ZnS powder scintillators. These defects, associated with copper and oxygen, are discussed in relation to PL results and extensive literature assessment. Commercial transparent ZnS is routinely produced by chemical vapor deposition to sizes larger than square meters, enabling potentially novel radiation detection applications requiring large, thick apertures.

  13. Two-step synthesis of luminescent MoS(2)-ZnS hybrid quantum dots.

    PubMed

    Clark, Rhiannon M; Carey, Benjamin J; Daeneke, Torben; Atkin, Paul; Bhaskaran, Madhu; Latham, Kay; Cole, Ivan S; Kalantar-Zadeh, Kourosh

    2015-10-28

    A surfactant assisted technique has been used to promote the exfoliation of molybdenum disulphide (MoS2) in a water-ethanol mixture, to avoid the use of harsh organic solvents, whilst still producing sufficient concentration of MoS2 in suspension. The exfoliated flakes are converted into MoS2 quantum dots (QDs), through a hydrothermal procedure. Alternatively, when the flakes are processed with precursors for zinc sulphide (ZnS) synthesis, a simultaneous break-down and composite growth is achieved. The products are separated by centrifugation, into large ZnS spheres (200-300 nm) and small MoS2-ZnS hybrid QD materials (<100 nm), of which, the latter show favorable optical properties. Two concurrent photoluminescent (PL) peaks are seen at 380 and 450 nm, which are assigned to MoS2 and ZnS components of QDs, respectively. The PL emission from MoS2-ZnS QDs is of high energy and is more intense than the bare MoS2 flakes or QDs, with a quantum yield as high as 1.96%. The emission wavelength is independent from the excitation wavelength and does not change over time. Due to such properties, the developed hybrid QDs are potentially suitable for imaging and sensing applications. PMID:26399979

  14. Nanocrystalline cellulose from coir fiber: preparation, properties, and applications

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Nanocrystalline cellulose derived from various botanical sources offers unique and potentially useful characteristics. In principle, any cellulosic material can be considered as a potential source of a nanocrystalline material, including crops, crop residues, and agroindustrial wastes. Because of t...

  15. [Photoexcitation mechanism of photoconductive device by organic/inorganic thin-film heteropairing].

    PubMed

    Jin, Hui; Teng, Feng; Liu, Jun-Feng; Meng, Xian-Guo; Xu, Zheng; Hou, Yan-Bing; Xu, Xu-Rong

    2004-08-01

    Photoconductive devices with organic (polyvinylcarbazole-PVK)/inorganic (zinc-sulfide--ZnS) thin-film heteropairing were fabricated. In external field, the excitation profile of the steady-state photoconductivity and the primary photoexcitation process of hybrid devices were presented and discussed. Comparison of photoconductivity of the devices and absorption spectra of PVK and ZnS implied that both layers absorption contributes to the photocurrent, but the effective part is at the interface of PVK and ZnS. The dependence of maximum photocurrent on the applied voltage and the dark and illuminated current spectra indicates the ultrafast charge transfer at the interface. PMID:15766107

  16. A strategy to enhance the efficiency of dye-sensitized solar cells by the highly efficient TiO2/ZnS photoanode.

    PubMed

    Srinivasa Rao, S; Punnoose, Dinah; Venkata Tulasivarma, Ch; Pavan Kumar, C H S S; Gopi, Chandu V V M; Kim, Soo-Kyoung; Kim, Hee-Je

    2015-02-01

    In dye-sensitized solar cells (DSSCs), the TiO2 photoanode film plays an important role in increasing the power conversion efficiency. In this work, TiO2 nanoparticles were first coated on fluorine-doped tin oxide by the doctor-blade method, and then a thin film of zinc sulfide (ZnS) was successfully fabricated on the surface of the TiO2 nanoparticles using the successive ionic layer adsorption and reaction method. The performance of the DSSCs was examined in detail using a cobalt sulfide counter electrode and I(-)/I3(-) electrolyte. X-ray diffraction and energy dispersive X-ray spectroscopy measurements were used to find the composition of the films. Characterization with electrochemical impedance spectroscopy indicated that the recombination rate decreased drastically during the electron transportation. The DSSCs based on ZnS coated TiO2 photoanode achieved a power conversion efficiency of 5.90% under 1 sunlight illumination, which is higher than that of the bare TiO2 photoanode (4.43%). This suggests that the promising ZnS-coated TiO2 nanoparticles accumulate a large number of photo-injected electrons in the conduction band of the photoanode and the N719 dye lowers the recombination of photo-injected electrons with the redox electrolyte. PMID:25556975

  17. The hydrothermal evolution of the phase and shape of ZnS nanostructures and their gas-sensing properties.

    PubMed

    Hu, Pengfei; Gong, Guodong; Zhan, Fangyi; Zhang, Yuan; Li, Rong; Cao, Yali

    2016-02-14

    This work presents the evolution of the phase and shape of ZnS along the hydrothermal holding time or the dosage of the surfactant. The ZnS sensor obviously showed phase-/defect-dependent gas-sensing performances indicating that the wurtzite-type structure, as well the defect will improve its gas-sensing activities. PMID:26781594

  18. Characterization and Application of Colloidal Nanocrystalline Materials for Advanced Photovoltaics

    NASA Astrophysics Data System (ADS)

    Bhandari, Khagendra P.

    Solar energy is Earth's primary source of renewable energy and photovoltaic solar cells enable the direct conversion of sunlight into electricity. Crystalline silicon solar cells and modules have dominated photovoltaic technology from the beginning and they now constitute more than 90% of the PV market. Thin film (CdTe and CIGS) solar cells and modules come in second position in market share. Some organic, dye-sensitized and perovskite solar cells are emerging in the market but are not yet in full commercial scale. Solar cells made from colloidal nanocrystalline materials may eventually provide both low cost and high efficiency because of their promising properties such as high absorption coefficient, size tunable band gap, and quantum confinement effect. It is also expected that the greenhouse gas emission and energy payback time from nanocrystalline solar PV systems will also be least compared to all other types of PV systems mainly due to the least embodied energy throughout their life time. The two well-known junction architectures for the fabrication of quantum dot based photovoltaic devices are the Schottky junction and heterojunction. In Schottky junction cells, a heteropartner semiconducting material is not required. A low work function metal is used as the back contact, a transparent conducting layer is used as the front contact, and the layer of electronically-coupled quantum dots is placed between these two materials. Schottky junction solar cells explain the usefulness of nanocrystalline materials for high efficiency heterojunction solar cells. For heterojunction devices, n-type semiconducting materials such as ZnO , CdS or TiO2 have been used as suitable heteropartners. Here, PbS quantum dot solar cells were fabricated using ZnO and CdS semiconductor films as window layers. Both of the heteropartners are sputter-deposited onto TCO coated glass substrates; ZnO was deposited with the substrate held at room temperature and for CdS the substrate was at 250

  19. Nanocrystalline CuNi alloys: improvement of mechanical properties and thermal stability

    NASA Astrophysics Data System (ADS)

    Nogues, Josep; Varea, A.; Pellicer, E.; Sivaraman, K. M.; Pane, S.; Nelson, B. J.; Surinach, S.; Baro, M. D.; Sort, J.

    2014-03-01

    Nanocrystalline metallic films are known to benefit from novel and enhanced physical and chemical properties. In spite of these outstanding properties, nanocrystalline metals typically show relatively poor thermal stability which leads to deterioration of the properties due to grain coarsening. We have studied nanocrystalline Cu1-xNix (0.56 < x < 1) thin films (3 μm-thick) electrodeposited galvanostatically onto Cu/Ti/Si (100) substrates. CuNi thin films exhibit large values of hardness (6.15 < H < 7.21 GPa), which can be tailored by varying the composition. However, pure Ni films (x = 1) suffer deterioration of their mechanical and magnetic properties after annealing during 3 h at relatively low temperatures (TANN > 475 K) due to significant grain growth. Interestingly, alloying Ni with Cu clearly improves the thermal stability of the material because grain coarsening is delayed due to segregation of a Cu-rich phase at grain boundaries, thus preserving both the mechanical and magnetic properties up to higher TANN.

  20. Atomic structure relaxation in nanocrystalline NiO studied by EXAFS spectroscopy: Role of nickel vacancies

    NASA Astrophysics Data System (ADS)

    Anspoks, A.; Kalinko, A.; Kalendarev, R.; Kuzmin, A.

    2012-11-01

    Nanocrystalline NiO samples have been studied using the Ni K-edge extended x-ray absorption fine structure (EXAFS) spectroscopy and recently developed modeling technique, combining classical molecular dynamics with ab initio multiple-scattering EXAFS calculations (MD-EXAFS). Conventional analysis of the EXAFS signals from the first two coordination shells of nickel revealed that (i) the second shell average distance R(Ni-Ni2) expands in nanocrystalline NiO compared to microcrystalline NiO, in agreement with overall unit cell volume expansion observed by x-ray diffraction; (ii) on the contrary, the first shell average distance R(Ni-O1) in nanocrystalline NiO shrinks compared to microcrystalline NiO; (iii) the thermal contribution into the mean-square relative displacement σ2 is close in both microcrystalline and nanocrystalline NiO and can be described by the Debye model; (iv) the static disorder is additionally present in nanocrystalline NiO in both the first Ni-O1 and second Ni-Ni2 shells due to nanocrystal structure relaxation. Within the MD-EXAFS method, the force-field potential models have been developed for nanosized NiO using as a criterion the agreement between the experimental and theoretical EXAFS spectra. The best solutions have been obtained for the 3D cubic-shaped nanoparticle models with nonzero Ni vacancy concentration Cvac: Cvac≈0.4-1.2% for NiO nanoparticles having the cube size of L≈3.6-4.2 nm and Cvac≈1.6-2.0% for NiO thin film composed of cubic nanograins with a size of L≈1.3-2.1 nm. Thus our results show that the Ni vacancies in nanosized NiO play important role in its atomic structure relaxation along with the size reduction effect.

  1. Highly luminescent undoped and Mn-doped ZnS nanoparticles by liquid phase pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Aneesh, P. M.; Shijeesh, M. R.; Aravind, Arun; Jayaraj, M. K.

    2014-09-01

    In this paper we report the synthesis of highly luminescent ZnS and Mn-doped ZnS nanoparticles with uniform particle size distribution by liquid phase pulsed laser ablation. The formation of nanosized ZnS crystallites was confirmed by high-resolution transmission electron microscopy (HRTEM) images. The optical properties of these nanoparticles were studied by room temperature photoluminescence (PL) spectra. The PL emission from the ZnS nanoparticles shows a sharp peak in the UV region (334 nm) corresponding to the band edge and a broad peak in the visible region which can be attributed to the sulphur vacancies, cation vacancies and surface states in the nanocrystals. The yellow emission from the Mn-doped ZnS nanoparticles can be attributed to the radiative transition between 4T1 and 6A1 levels within the 3d5 orbital of Mn2+.

  2. Creation of ZnS nanoparticles by laser ablation in water

    NASA Astrophysics Data System (ADS)

    Gan, YuLin; Wang, Li; Wang, RongPing

    2016-02-01

    We have created ZnS nanoparticles using pulsed laser ablation of ceramic target in water with an aim to produce nanoparticles with uniform distribution of the size. The particle size, structure, and physical properties were systematically investigated by X-ray diffraction (XRD), Raman spectra, high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and energy-dispersive spectroscopy. The ZnS nanoparticles were confirmed from XRD, Raman and SAED patterns to possess the sphalerite structure. Chemical composition of the ZnS nanoparticles was found to be stoichiometric. HRTEM images exhibited well-arranged lattices with the space of 0.274 nm for (200) plane and that of 0.317 nm for (111) plane. The present results demonstrate that pulsed laser ablation in water is effective and promising to create nanoparticles with controllable size in a large scale.

  3. Synthesis of Cu doped ZnS nanostructures on flexible substrate using low cost chemical method

    SciTech Connect

    Kumar, Nitin Purohit, L. P.; Goswami, Y. C.

    2015-08-28

    Flexible electronics is one of the emerging area of this era. In this paper we have reported synthesis of Cu doped Zinc sulphide nanostructures on filter paper flexible substrates. Zinc chloride and Thio urea were used as a precursor for Zinc and Sulphur. The structures were characterized by XRD, FE-SEM and UV visible spectrometer. All the peaks identified for cubic structure of ZnS. Appearance of small Cu peaks indicates incorporation of Cu into ZnS lattice. Zns nanostructures assembled as nanobelts and nanofibers as shown in FE-SEM micrographs. Compound Structures provide the reasonable electrical conductivity on filter paper. Absorption in UV region makes them suitable for flexible electronic devices.

  4. Raman selection rule for surface optical phonons in ZnS nanobelts.

    PubMed

    Ho, Chih-Hsiang; Varadhan, Purushothaman; Wang, Hsin-Hua; Chen, Cheng-Ying; Fang, Xiaosheng; He, Jr-Hau

    2016-03-21

    We report Raman scattering results for high-quality wurtzite ZnS nanobelts (NBs) grown by chemical vapor deposition. In the Raman spectrum, the ensembles of ZnS NBs exhibit first order phonon modes at 274 cm(-1) and 350 cm(-1), corresponding to A1/E1 transverse optical and A1/E1 longitudinal optical phonons, in addition to a strong surface optical (SO) phonon mode at 329 cm(-1). The existence of the SO band is confirmed by its shift with different surrounding dielectric media. Polarization dependent Raman spectra were recorded on a single ZnS NB and for the first time a SO phonon band has been detected on a single nanobelt. Different selection rules for the SO phonon mode are shown from their corresponding E1/A1 phonon modes, and were attributed to the breaking of anisotropic translational symmetry on the NB surface. PMID:26924069

  5. Effects of Cu Dopant on Lattice and Optical Properties of ZnS Quantum Dots.

    PubMed

    Shuhua, Lu; Aiji, Wang; Tingfang, Chen; Yinshu, Wang

    2016-04-01

    Doped and undoped ZnS colloidal nanocrystals have drawn much attention due to their versatile applications in the fields of optoelectronics and biotechnology. In this paper, Cu doped ZnS quantum dots were synthesized via the simple thermolysis of ethylxanthate salts. The lattice and optical properties of the nanocrystals were then studied in detail. The quantum dot lattice contracted linearly between Cu concentrations of 0.2-2%, while it continued to contract more gradually as Cu concentrations were further increased from 4 to 6%, due in part to the Cu ions located on the surface of the ZnS lattice. Cu incorporation induces a long tail in absorption at long wavelengths. The PL spectrum shows a red shift at first, and then a blue shift with increases in Cu concentration. Cu doped at low concentrations (0.2-1%) enhanced the emission, while high Cu concentrations (2-6%) quenched emissions. PMID:27451716

  6. Role of magnesium in ZnS structure: Experimental and theoretical investigation

    NASA Astrophysics Data System (ADS)

    Shahid, M. Y.; Asghar, M.; Arbi, H. M.; Zafar, M.; Ilyas, S. Z.

    2016-02-01

    Wide band gap semiconductor materials are extending significant applications in electronics and optoelectronics industry. They are showing continued advancement in ultraviolet to infrared LEDs and laser diodes. Likewise the band gap tunability of ZnS with intentional impurities such as Mg and Mn are found useful for optoelectronic devices. Information from literature indicates slight blue shift in the band gap energy of ZnS by Mg doping but nevertheless, we report a reasonable red shift (3.48 eV/356 nm to 2.58 eV/480 nm) in ZnS band gap energy in Mg-ZnS structure. Theoretical model based on first principle theory using local density approximation revealed consistent results on Mg-ZnS structure. Similarly, structural, morphological, optical and electrical properties of the as grown Mg-ZnS were studied by XRD, SEM, FTIR, EDS, UV-Vis Spectrophotometer and Hall measurement techniques.

  7. Spin coating of ZnS nanostructures on filter paper and their characterization

    NASA Astrophysics Data System (ADS)

    Kumar, Nitin; Purohit, L. P.; Goswami, Y. C.

    2016-09-01

    In this paper we have reported spin coating of Cu doped Zinc sulphide nanostructures on filter paper flexible substrates. Zinc chloride and thiourea were used as precursors of zinc and sulphur. The samples were characterized by XRD, FE-SEM, EDAX and UV-visible spectrum studies. All the diffractogram peaks confirm the cubic structure of ZnS with small peak of Cu indicates incorporation of Cu into ZnS lattice. FE-SEM micrographs exhibit fibrous morphologies of ZnS structures on filter paper. Compound structures on flexible substrates show ohmic behavior with conductivity about 3.07×106 (Ωcm)-1 to 4.27×106 (Ωcm)-1. Excellent photoluminescence property doped with copper makes them suitable for flexible opto-electronic devices.

  8. Synthesis and study of optical properties of transition metals doped ZnS nanoparticles.

    PubMed

    Ramasamy, V; Praba, K; Murugadoss, G

    2012-10-01

    ZnS and transition metal (Mn, Co, Ni, Cu, Ag and Cd) doped ZnS were synthesized using chemical precipitation method in an air atmosphere. The structural and optical properties were studied using various techniques. The X-ray diffraction (XRD) analysis show that the particles are in cubic structure. The mean size of the nanoparticles calculated through Scherrer equation is in the range of 4-6.1 nm. Elemental dispersive (EDX) analysis of doped samples reveals the presence of doping ions. The scanning electron microscopic (SEM) and transmission electron microscopic (TEM) studies show that the synthesized particles are in spherical shape. Optical characterization of both undoped and doped samples was carried out by ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy. The absorption spectra of all the samples are blue shifted from the bulk ZnS. An optimum doping level of the transition metals for enhanced PL properties are found through optical study. PMID:22938741

  9. Large-scale synthesis well-dispersed ZnS microspheres and their photoluminescence, photocatalysis properties

    SciTech Connect

    Wang Xinjun Wan Fuquan; Han Kun; Chai Chunxia; Jiang Kai

    2008-12-15

    Large-scale and well-dispersed ZnS microspheres were prepared by a simple hydrothermal method using ZnSO{sub 4}{center_dot}7H{sub 2}O and SC(NH{sub 2}){sub 2} as main original reactant and poly(vinyl pyrrolidone) (PVP)(Mr {approx} 10,000) as the surfactant. The products were characterized by X-Ray diffraction, scanning electron microscopy and transmission electron microscopy. The growth process involves a special oriented aggregation of PVP stabilized ZnS nanoparticles into microspheres of 1.5 {approx} 2.0 {mu}m in sizes. The photocatalytic activity of as-prepared ZnS microsphere was evaluated by using methylene blue (MB) as a model organic compound. The optical properties of the products were also examined by means of photoluminescence (PL) spectroscopy.

  10. Bio-functionalized water-soluble ZnS quantum dots using carboxymethylchitosan

    NASA Astrophysics Data System (ADS)

    Mansur, A. A. P.; Mansur, H. S.; Borsagli, F. G. L. M.; Ramanery, F. P.

    2015-03-01

    The major goal of this study was to develop an innovative green route for synthesizing biocompatible water-soluble luminescent QDs using chemically modified chitosan as the ligand in aqueous media. The preparation of ZnS QDs bio-functionalized by carboxymethylchitosan (CMC) was performed using a single-step aqueous colloidal process at room temperature. The results showed that water-dispersible ZnS nanocrystals capped by CMC were produced within the quantum-size confinement regime. Moreover, the luminescent properties of ZnS QDs were significantly affected by the pH during the synthesis due to the size distribution of the nanoparticles and their density of surface states.

  11. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  12. Surface-treated biocompatible ZnS quantum dots: Synthesis, photo-physical and microstructural properties

    NASA Astrophysics Data System (ADS)

    Taherian, M.; Sabbagh Alvani, A. A.; Shokrgozar, M. A.; Salimi, R.; Moosakhani, S.; Sameie, H.; Tabatabaee, F.

    2014-03-01

    In the present study, the ZnS semiconductor quantum dots were successfully synthesized via an aqueous method utilizing glutathione (GSH), thioglycolic acid (TGA) and polyvinyl pyrrolidone (PVP) as capping agents. The structural, morphological and photo-physical properties and biocompatibility were investigated using comprehensive characterization techniques such as x-ray diffraction (XRD), scanning and transmission electron microscopy (SEM and TEM), dynamic light scattering (DLS), Fourier transform infrared spectrometry (FT-IR), UV-Vis optical absorption, photoluminescence (PL) spectrometer and MTT assay. The XRD patterns showed a cubic zinc blende crystal structure and a crystallite size of about 2-3 nm using Scherrer's equation confirmed by the electron micrographs and Effective Mass Approximation (EMA). The DLS and zeta-potential results revealed that GSH capped ZnS nanoparticles have the narrowest size distribution with an average size of 27 nm and relatively good colloidal stability. Also, the FT-IR spectrum confirmed the interaction of the capping agent groups with ZnS nanoparticles. According to the UV-Vis absorption results, optical bandgap of the spherical capped nanoparticles is higher compared to the uncapped sample and could be wider than 3.67 eV (corresponding to the bulk ZnS), which is due to the quantum confinement effect. From photoluminescence spectra, it was found that the emission becomes more intensive and shifts towards the shorter wavelengths in the presence of the capping agent. Moreover, the emission mechanism of uncapped and capped ZnS was discussed in detail. Finally, the MTT results revealed the satisfactory (>94%) biocompatibility of GSH capped ZnS quantum dots which would be a promising candidate applicable in fluorescent biological labels.

  13. Advancements in the Quantification of the Crystal Structure of ZNS Materials Produced in Variable Gravity

    NASA Astrophysics Data System (ADS)

    Castillo, Martin

    2016-07-01

    Screens and displays consume tremendous amounts of power. Global trends to significantly consume less power and increase battery life have led to the reinvestigation of electroluminescent materials. The state of the art in ZnS materials has not been furthered in the past 30 years and there is much potential in improving electroluminescent properties of these materials with advanced processing techniques. Self-propagating high temperature synthesis (SHS) utilises a rapid exothermic process involving high energy and nonlinearity coupled with a high cooling rate to produce materials formed outside of normal equilibrium boundaries thus possessing unique properties. The elimination of gravity during this process allows capillary forces to dominate mixing of the reactants which results in a superior and enhanced homogeneity in the product materials. ZnS type materials have been previously conducted in reduced gravity and normal gravity. It has been claimed in literature that a near perfect phases of ZnS wurtzite was produced. Although, the SHS of this material is possible at high pressures, there has been no quantitative information on the actual crystal structures and lattice parameters that were produced in this work. Utilising this process with ZnS doped with Cu, Mn, or rare earth metals such as Eu and Pr leads to electroluminescence properties, thus making this an attractive electroluminescent material. The work described here will revisit the synthesis of ZnS via high pressure SHS and will re-examine the work performed in both normal gravity and in reduced gravity within the ZARM drop tower facility. Quantifications in the lattice parameters, crystal structures, and phases produced will be presented to further explore the unique structure-property performance relationships produced from the SHS of ZnS materials.

  14. Large-scale growth of millimeter-long single-crystalline ZnS nanobelts

    SciTech Connect

    Li Jianye Zhang Qi; An Lei; Qin Luchang; Liu Jie

    2008-11-15

    Millimeter-long single-crystalline hexagonal ZnS nanobelts were grown on specific locations on a wafer scale. This is the first time that the millimeter-scale ZnS nanobelt has been synthesized. The longest nanobelts are about 3 mm. The as-grown nanobelts were characterized by means of field emission scanning electron microscopy, X-ray powder diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the ultra-long nanobelts are pure single-crystalline hexagonal ZnS. There are two kinds of ZnS nanobelts existing in the products. One is the nanobelts that have two smooth sides and grow along the [0 0 1] longitudinal direction, and the other is the nanobelts that have one smooth side and one saw-teeth-like side, namely nanosaws, and grow along the [2 1 0] longitudinal direction. A vapor-liquid-solid mechanism is suggested for the lengthwise growth of the ZnS nanobelts (nanosaws) and a vapor-solid mechanism for the side direction growth of the saw-teeth of the nanosaws. - Graphical Abstract: Millimeter-long single-crystalline ZnS nanobelts were grown on specific locations on a large scale. There are two kinds of nanobelts in the products-one has two smooth sides, and the other has one smooth side and one saw-teeth-like side, namely nanosaws. Mechanisms for the longitudinal direction growth of the nanobelts/nanosaws and the side saw-teeth direction growth of the nanosaws are discussed.

  15. Stacking fault and twinning in nanocrystalline metals.

    SciTech Connect

    Liao, Xiaozhou; Zhao, Y.; Srivilliputhur, S. G.; Zhou, F.; Lavernia, E. J.; Baskes, M. I.; Zhu, Y. T.; Xu, H. F.

    2004-01-01

    Nanocrystalline Al processed by cryogenic ball-milling and nanocrystalline Cu processed by high-pressure torsion at a very low strain rate and at room temperature were investigated using high-resolution transmission electron microscopy. For nanocrystalline Al, we observed partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults and twinning. We also observed deformation twins formed via two other mechanisms recently predicted by molecular dynamic simulations. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high stacking fault energy. For nanocrystalline Cu, we found that twinning becomes a major deformation mechanism, which contrasts with the literature reports that deformation twinning in coarse-grained Cu occurs only under high strain rate and/or low temperature conditions and that reducing grain sizes suppresses deformation twinning. The investigation of the twinning morphology suggests that twins and stacking faults in nanocrystalline Cu were formed through partial dislocation emissions from grain boundaries. This mechanism differs from the pole mechanism operating in coarse-grained Cu.

  16. Thermal Conductivity of Nanocrystalline Silicon Prepared by Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kearney, Brian; Liu, Xiao; Jugdersuren, Battogtokh; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Stroud, Rhonda; Nemeth, William; Wang, Qi

    2015-03-01

    Thin film nanocrystalline silicon prepared by chemical-vapor deposition is an established material used in multijunction amorphous silicon solar cells. Its potential in low cost and scalable thermoelectric applications depends on the reducing grain sizes to nanometers while simultaneously maintaining a high crystalline to amorphous ratio. In this work, we show that by varying the hydrogen dilution of silane gas flow during deposition, we can reduce average grain sizes to a few nanometers while still maintaining ~ 90% crystallinity of the material. Annealing at 600 °C improves crystalline content with only a small increase of the grain sizes. The values of thermal conductivity, measured from 85 K to room temperature as function of hydrogen dilution ratio from full amorphous to nanocrystalline silicon, remain at a level that is typical for amorphous silicon. Office of Naval Research.

  17. Thermoelectric Power of Nanocrystalline Silicon Prepared by Hot-Wire Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kearney, Brian; Liu, Xiao; Jugdersuren, Battogtokh; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Stroud, Rhonda; Nemeth, William; Wang, Qi

    Although doped bulk silicon possesses a favorable Seebeck coefficient and electrical conductivity, its thermal conductivity is too large for practical thermoelectric applications. Thin film nanocrystalline silicon prepared by hot-wire chemical-vapor deposition (HWCVD) is an established material used in multijunction amorphous silicon solar cells. Its potential in low cost and scalable thermoelectric applications depends on achieving a low thermal conductivity without sacrificing thermoelectric power and electrical conductivity. We examine the thermoelectric power of boron-doped HWCVD nanocrystalline silicon and find that it is comparable to doped nanostructured silicon alloys prepared by other methods. Given the low thermal conductivity and high electrical conductivity of these materials, they can achieve a high thermoelectric figure of merit, ZT. Work supported by the Office of Naval Research.

  18. Displacive radiation-induced structural contraction in nanocrystalline ZrN

    SciTech Connect

    Lu Fengyuan; Sun Hongtao; Lian Jie; Huang, Mengbing; Yaqoob, Faisal; Lang, Maik; Ewing, Rodney C.; Namavar, Fereydoon; Trautmann, Christina

    2012-07-23

    Nanocrystalline ZrN thin films with 5 nm grain size, prepared by ion beam assisted deposition, maintained their isometric structure upon intensive displacive and ionizing irradiations, indicating an extremely high stability similar to bulk ZrN. However, a unique structural contraction up to 1.42% in lattice parameter occurred only in nano-sized ZrN upon displacive irradiations. A significant nitrogen loss occurred with reduced N:Zr atomic ratio to 0.88, probably due to the production of displaced nitrogen atoms and fast diffusion along grain boundaries in nanocrystalline ZrN matrix. The accumulation of nitrogen vacancies and related strain relaxation may be responsible for the structural contraction.

  19. Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects

    SciTech Connect

    McCloy, John S.; Potter, B.g.

    2013-08-09

    Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.

  20. Surface Functionalization of ZnO Photocatalysts with Monolayer ZnS

    SciTech Connect

    Lahiri,J.; Batzill, M.

    2008-01-01

    A fundamental investigation of the interface properties of coupled semiconductor photocatalysts in view of enhancing visible light activity is presented. We show by photoemission spectroscopy that modification of ZnO with submonolayer films of ZnS, two materials with band gaps larger than 3.4 eV, results in an effective surface band gap narrowing to 2.8 eV. This reduces the photoexcitation threshold energy and thus potentially enhances the solar energy conversion capabilities of such a heterostructure photocatalysts. Furthermore, the characterization of the space charge region and work function of ZnS modified ZnO indicate improved surface properties for enhancing photocatalytic activity.

  1. Optical investigations of blue shift in ZnS quantum dots

    NASA Astrophysics Data System (ADS)

    Al-Douri, Y.; Verma, K. D.; Prakash, Deo

    2015-12-01

    ZnS quantum dots were synthesized using sulfur source of sodium sulphide and mercaptoethanol via chemical bath deposition technique. The synthesized ZnS QDs were analyzed and characterized by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM) and UV-visible (UV-vis) spectrophotometry. The average particle size goes down to 1.9 nm as capping agent concentration increases and corresponding absorption coefficient peak goes down to 265 nm. The blue shift within absorption-wavelength was elaborated. The refractive index and optical dielectric constant are calculated. A correlation between energy gap and absorption coefficient aside and particle size another side is discussed.

  2. Chemical vapor deposition synthesis and photoluminescence properties of ZnS hollow microspheres

    SciTech Connect

    Pi Zhengbang; Su Xiaolu; Yang Chao; Tian Xike Pei Fang; Zhang Suxin; Zhen Jianhua

    2008-08-04

    ZnS hollow microspheres were prepared via a facile template-free chemical vapor deposition (CVD) route using metallic zinc powders and sulphur sublimed as reactants. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectrometer (EDX). The results showed that the as-prepared ZnS hollow spheres had uniform size about 4-8 {mu}m in diameter. The growth mechanism of such interesting was discussed. The optical property of the products was also recorded by means of photoluminescence (PL) spectroscopy.

  3. Rapid phase synthesis of nanocrystalline cobalt ferrite

    SciTech Connect

    Shanmugavel, T.; Raj, S. Gokul; Rajarajan, G.; Kumar, G. Ramesh

    2014-04-24

    Synthesis of single phase nanocrystalline Cobalt Ferrite (CoFe{sub 2}O{sub 4}) was achieved by single step autocombustion technique with the use of citric acid as a chelating agent in mono proportion with metal. Specimens prepared with this method showed significantly higher initial permeability's than with the conventional process. Single phase nanocrystalline cobalt ferrites were formed at very low temperature. Surface morphology identification were carried out by transmission electron microscopy (TEM) analysis. The average grain size and density at low temperature increased gradually with increasing the temperature. The single phase formation is confirmed through powder X-ray diffraction analysis. Magnetization measurements were obtained at room temperature by using a vibrating sample magnetometer (VSM), which showed that the calcined samples exhibited typical magnetic behaviors. Temperature dependent magnetization results showed improved behavior for the nanocrystalline form of cobalt ferrite when compared to the bulk nature of materials synthesized by other methods.

  4. Direct Coating of Nanocrystalline Diamond on Steel

    NASA Astrophysics Data System (ADS)

    Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

    2012-09-01

    Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

  5. Synthesis of nanocrystalline tungsten carbide (WC) powder

    NASA Astrophysics Data System (ADS)

    Singla, Gourav; Singh, K.; Pandey, O. P.

    2013-06-01

    Nanocrystalline tungsten carbide (WC) has been obtained from bulk WO3 by in situ reduction and carbonization reactions at low temperature (˜ 600 °C) by taking Mg as reductant and acetone C3H6O as carbon source. It was aimed to elucidate carburization behavior of WO3 powder and to establish optimal conditions for the synthesis of nanocrystalline WC. The role of reaction time on the synthesis of WC has been investigated and discussed. The synthesized powders were characterized by X-ray powder diffraction, differential thermal analyzer (DTA), thermo gravimetric analysis (TGA).

  6. Deformation of nanocrystalline materials at ultrahigh strain rates - microstructure perspective in nanocrystalline nickel

    SciTech Connect

    Wang, Y; Bringa, E; Victoria, M; Caro, A; McNaney, J; Smith, R; Remington, B

    2006-04-10

    Nanocrystalline materials with grain sizes smaller than 100 nm have attracted extensive research in the past decade. Due to their high strength, these materials are good candidates for high pressure shock loading experiments. In this paper, we investigated the microstructural evolutions of nanocrystalline nickel with grain sizes of 10-50 nm, shock-loaded in a range of pressures (20-70 GPa). A laser-driven isentropic compression process was applied to achieve high shock-pressures in a timescale of nanoseconds and thus the high-strain-rate deformation of nanocrystalline nickel. Postmortem transmission electron microscopy (TEM) examinations reveal that the nanocrystalline structures survive the shock deformation and that dislocation activity is the prevalent deformation mechanism when the grain sizes are larger than 30 nm, without any twinning activity at twice the stress threshold for twin formation in micrometer-sized polycrystals. However, deformation twinning becomes an important deformation mode for 10-20 nm grain-sized samples.

  7. Carrier scattering mechanisms in p-type transparent copper-alloyed ZnS: Crystalline vs. amorphous

    NASA Astrophysics Data System (ADS)

    Woods-Robinson, Rachel; Faghaninia, Alireza; Cooper, Jason K.; Pham, Hieu H.; Lo, Cynthia; Wang, Lin-Wang; Ager, Joel W.

    2015-03-01

    Crystalline (wurtzite and sphalerite) and amorphous forms of copper-alloyed ZnS (CuxZn1-xS) are p-type conducting transparent thin film materials with near-record figures of merit for applications in photovoltaics and optoelectronics. Remarkably, the conductivity of amorphous CuxZn1-xS, 42 S/cm at x = 0.30, is nearly as high as crystalline CuxZn1-xS (54 S/cm at x = 0.21). This contrasts with typical observations of poorer carrier transport in amorphous materials. By combining experiment and computation, we investigate the defect physics underlying hole transport in amorphous and crystalline CuxZn1-xS. Structural probes (EXAFS, TEM and wide-angle XRD) are used to determine bonding characteristics and lattice order, and serve as inputs to ab initio hybrid functional HSE calculations of the electronic band structure. Hall effect, temperature dependent conductivity (15K to 500K), and XPS valence band measurements and ab initio calculations show that hole conduction occurs in a hybridized S-3p and Cu-3d valence band for amorphous and crystalline films. The hole scattering mechanisms which limit the conductivity will be discussed in the context of theoretical carrier transport model based on Boltzmann transport equation, ab initio calculated band structure, and phonon dispersion.

  8. Designing a stronger interface through graded structures in amorphous/nanocrystalline ZrCu/Cu multilayered films.

    PubMed

    Chang, C H; Hsieh, C H; Huang, J C; Wang, C; Liao, Y C; Hsueh, C H; Du, X H; Wang, Z K; Wang, X

    2016-06-01

    Many multilayered nano-structures appear to fail due to brittle matter along the interfaces. In order to toughen them, in this study, the microstructure and interface strength of multilayered thin films consisting of amorphous ZrCu and nanocrystalline Cu (with sharp or graded interfaces) are examined and analyzed. The interface possesses a gradient nature in terms of composition, nanocrystalline phase size and volume fraction. The bending results extracted from the nano-scaled cantilever bending samples demonstrate that multilayered films with graded interfaces would have a much higher interface bending strength/strain/modulus, and an overall improvement upgrade of more than 50%. The simple graded interface design of multilayered thin films with improved mechanical properties can offer much more promising performance in structural and functional applications for MEMS or optical coating. PMID:27103429

  9. Designing a stronger interface through graded structures in amorphous/nanocrystalline ZrCu/Cu multilayered films

    NASA Astrophysics Data System (ADS)

    Chang, C. H.; Hsieh, C. H.; Huang, J. C.; Wang, C.; Liao, Y. C.; Hsueh, C. H.; Du, X. H.; Wang, Z. K.; Wang, X.

    2016-06-01

    Many multilayered nano-structures appear to fail due to brittle matter along the interfaces. In order to toughen them, in this study, the microstructure and interface strength of multilayered thin films consisting of amorphous ZrCu and nanocrystalline Cu (with sharp or graded interfaces) are examined and analyzed. The interface possesses a gradient nature in terms of composition, nanocrystalline phase size and volume fraction. The bending results extracted from the nano-scaled cantilever bending samples demonstrate that multilayered films with graded interfaces would have a much higher interface bending strength/strain/modulus, and an overall improvement upgrade of more than 50%. The simple graded interface design of multilayered thin films with improved mechanical properties can offer much more promising performance in structural and functional applications for MEMS or optical coating.

  10. Selective Sulfidation of Lead Smelter Slag with Pyrite and Flotation Behavior of Synthetic ZnS

    NASA Astrophysics Data System (ADS)

    Han, Junwei; Liu, Wei; Wang, Dawei; Jiao, Fen; Zhang, Tianfu; Qin, Wenqing

    2016-08-01

    The selective sulfidation of lead smelter slag with pyrite in the presence of carbon and Na salts, and the flotation behavior of synthetic ZnS were studied. The effects of temperature, time, pyrite dosage, Na salts, and carbon additions were investigated based on thermodynamic calculation, and correspondingly, the growth mechanism of ZnS particles was studied at high temperatures. The results indicated that the zinc in lead smelter slag was selectively converted into zinc sulfides by sulfidation roasting. The sulfidation degree of zinc was increased until the temperature, time, pyrite, and carbon dosages reached their optimum values, under which it was more than 95 pct. The growth of ZnS particles largely depended upon roasting temperature, and the ZnS grains were significantly increased above 1373 K (1100 °C) due to the formation of a liquid phase. After the roasting, the zinc sulfides generated had a good floatability, and 88.34 pct of zinc was recovered by conventional flotation.

  11. Multiphonon scattering and photoluminescence of two dimensional ZnS nanosheets grown within Na-4 mica

    NASA Astrophysics Data System (ADS)

    Mandal, Amrita; Mitra, Sreemanta; Datta, Anindya; Banerjee, Sourish; Dhara, Sandip; Chakravorty, Dipankar

    2012-10-01

    Two dimensional wurtzite ZnS nanosheets with thickness of 0.6 nm are grown within the interlayer spaces of sodium fluorophlogopite mica (Na-4 mica) using ion-exchange-cum-solution treatment method followed by sulfidation treatment at 873 K. The presence of wurtzite ZnS is confirmed by x-ray diffraction, electron microscopy, and Raman scattering studies. The two dimensional form of ZnS gives rise to a strong quantum confinement with the band gap blue shifted by 1.7 eV. Thickness of the nanosheet is confirmed using atomic force microscopy. Raman scattering studies show higher order transverse optical modes due to increased deformation potential in reduced dimension. In contrast to red shift of optical phonon modes in phonon confinement model, a blue shift observed is ascribed to a compressive stress on ZnS nanosheets grown within Na-4 mica interlayer spaces. An additional band at 315 cm-1 is assigned to surface optical phonon. Unusual broadening in room temperature photoluminescence spectrum may be due to strong coupling of excitons with overtones of longitudinal optical phonon modes.

  12. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    SciTech Connect

    Chowdhury, S. Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-12-01

    The present study compares structural and optical modifications of bare and silica (SiO{sub 2}) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni{sup 12+} ion beam with fluences 10{sup 12} to 10{sup 13} ions/cm{sup 2}. Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.

  13. Optical characterization of ZnS coated CdS nanorods embedded in liquid crystals

    NASA Astrophysics Data System (ADS)

    Roy, J. S.; Majumder, T. Pal; Dabrowski, R.

    2016-05-01

    The photoluminescence (PL) emission intensity of ZnS coated CdS nanorods, represented by CdS/ZnS system, have been enhanced in presence of liquid crystals (LC) and the enhancement strongly depends on concentration of LC. The highly light scattering liquid crystalline phase causes the enhancement in PL intensity. It is also observed that the PL intensity of CdS nanorods enhances with the coating of ZnS material. This enhancement in PL intensity is ascribed by the fact that the high optical band gap ZnS material prevents the tunneling of the charge carriers from the core CdS nanorods and passivated nonradiative recombination sites which are existed on the core surfaces. Finally, 5 fold enhancements in PL intensity of CdS nanorods have been observed by coating with ZnS material and then embedding in LC. We have also observed the red shift in emission energy band of CdS/ZnS system embedded in LC. This study will provide a possible way to develop smart optoelectronics devices.

  14. Study of the Vibrational Spectra of the Mixed Crystal ZnS1-xSex

    NASA Astrophysics Data System (ADS)

    Basak, Tista; Rao, Mala N.; Chaplot, S. L.

    2011-07-01

    A simple transferable potential model has been employed to study the vibrational mode behavior of the mixed system ZnS1-xSex as a function of concentration and pressure. Further, the existence of a localized resonance mode has also been confirmed, in agreement with experimental data from Raman scattering.

  15. Room Temperature Ferromagnetism in Cr-doped ZnS Nanoparticles

    NASA Astrophysics Data System (ADS)

    Reddy, D. Amaranatha; Murali, G.; Vijayalakshmi, R. P.; Reddy, B. K.

    2011-10-01

    Cr-doped ZnS nanoparticles with Cr concentration of 2 atm.% were successfully synthesized by the chemical co-precipitation method using 2-mercapto ethanol as the capping agent. The structural, optical characteristics and magnetic properties of the prepared samples were studied. Energy Dispersive spectroscopy (EDS) measurements showed the existence of Cr ion in the Cr doped ZnS. No mixed phase was observed from X-ray diffraction (XRD) studies and all the peaks were indexed to the cubic phase of ZnS. The diameter is in the range of 5-10 nm, it was confirmed by TEM studies. The photoluminescence spectra of all the samples exhibited a broad emission band located around 435 nm. The luminescence intensity decreased by doping Cr. The magnetic behavior of the nanoparticles for Cr doped ZnS was investigated using a vibrating sample magnetometer (VSM). We determined the magnetic parameters such as saturation magnetization (MS), coercivity (HC) and retentivity (MR) with Cr concentration from M-H loop.

  16. Morphology-controlled synthesis of ZnS nanostructures via single-source approaches

    SciTech Connect

    Han, Qiaofeng; Qiang, Fei; Wang, Meijuan; Zhu, Junwu; Lu, Lude; Wang, Xin

    2010-07-15

    ZnS nanoparticles of various morphologies, including hollow or solid spherical, and polyhedral shape, were synthesized from single-source precursor Zn(S{sub 2}COC{sub 2}H{sub 5}){sub 2} without using a surfactant or template. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy. The results indicate that ZnS hollow and solid spheres assembled by nanoparticles can be easily generated by the solution phase thermalysis of Zn(S{sub 2}COC{sub 2}H{sub 5}){sub 2} at 80 {sup o}C using N, N-dimethylformamide (DMF) and ethylene glycol (EG) or water as solvents, respectively, whereas solvothermal process of the same precursor led to ZnS nanoparticles of polyhedral shape with an average size of 120 nm. The optical properties of these ZnS nanostructures were investigated by room-temperature luminescence and UV-vis diffuse reflectance spectra.

  17. Magnetic properties in Pd doped ZnS from ab initio calculations

    NASA Astrophysics Data System (ADS)

    Dong, Xinlong; Li, Qiuhang; Xu, Mingxiang

    2013-11-01

    First-principles calculations based on density functional theory within the general gradient approximation (GGA) are performed to study the electronic structure and magnetic properties of Pd doped ZnS. It is found that an isolated Pd atom doped 2 × 2 × 2 ZnS supercell shows half-metallic ferromagnetic character with a total magnetic moment of 2.0 μ B per supercell, which is significantly enhanced compared with the pure ZnS supercell. The strong ferromagnetic coupling of the local magnetic moments can be explained in terms of strong hybridisation between Pd-4 d and S-3 p states. The hybridisation between Pd and the neighbouring S atoms leads to a strong coupling chain Pd(4 d)-S(3 p)-Zn(3 d)-S(3 p)-Pd(4 d), which induces strong indirect long range FM coupling between Pd dopants. The results of several doping configurations demonstrate that ferromagnetic coupling exists between the two doped palladium atoms. These results suggest that Pd doped ZnS can also be considered as suitable candidates for exploring new half-metallic ferromagnetism in semiconductors.

  18. Selective Sulfidation of Lead Smelter Slag with Pyrite and Flotation Behavior of Synthetic ZnS

    NASA Astrophysics Data System (ADS)

    Han, Junwei; Liu, Wei; Wang, Dawei; Jiao, Fen; Zhang, Tianfu; Qin, Wenqing

    2016-05-01

    The selective sulfidation of lead smelter slag with pyrite in the presence of carbon and Na salts, and the flotation behavior of synthetic ZnS were studied. The effects of temperature, time, pyrite dosage, Na salts, and carbon additions were investigated based on thermodynamic calculation, and correspondingly, the growth mechanism of ZnS particles was studied at high temperatures. The results indicated that the zinc in lead smelter slag was selectively converted into zinc sulfides by sulfidation roasting. The sulfidation degree of zinc was increased until the temperature, time, pyrite, and carbon dosages reached their optimum values, under which it was more than 95 pct. The growth of ZnS particles largely depended upon roasting temperature, and the ZnS grains were significantly increased above 1373 K (1100 °C) due to the formation of a liquid phase. After the roasting, the zinc sulfides generated had a good floatability, and 88.34 pct of zinc was recovered by conventional flotation.

  19. Highly porous ZnS microspheres for superior photoactivity after Au and Pt deposition and thermal treatment

    SciTech Connect

    Singla, Shilpa; Pal, Bonamali

    2013-11-15

    Graphical abstract: Highly porous ZnS microsphere of size 2–5 μm having large surface area ca. 173.14 m{sup 2} g{sup −1} exhibits superior photocatalytic activity for the oxidation of 4-nitrophenol under UV light irradiation. The rate of photooxidation has been significantly improved by Au and Pt deposition and after sintering, respectively, due to rapid electron acceptance by metal from photoexcited ZnS and growth of crystalline ZnS phase. - Highlights: • Photoactive ZnS microsphere of size 2–5 μm was prepared by hydrothermal route. • Highly porous cubic spherical ZnS crystals possess a large surface area, 173 m{sup 2} g{sup −1}. • 1 wt% Au and Pt photodeposition highly quenched the photoluminescence at 437 nm. • Sintering and metal loading notably improve the photooxidation rate of 4-nitrophenol. • Pt co-catalyst always exhibits superior photoactivity of ZnS microsphere than Au. - Abstract: This work highlights the enhanced photocatalytic activity of porous ZnS microspheres after Au and Pt deposition and heat treatment at 500 °C for 2 h. Microporous ZnS particles of size 2–5 μm with large surface area 173.14 m{sup 2} g{sup −1} and pore volume 0.0212 cm{sup 3} g{sup −1} were prepared by refluxing under an alkaline medium. Photoluminescence of ZnS at 437 nm attributed to sulfur or zinc vacancies were quenched to 30% and 49%, respectively, after 1 wt% Au and Pt loading. SEM images revealed that each ZnS microparticle consist of several smaller ZnS spheres of size 2.13 nm as calculated by Scherrer's equation. The rate of photooxidation of 4-nitrophenol (10 μM) under UV (125 W Hg arc–10.4 mW/cm{sup 2}) irradiation has been significantly improved by Au and Pt deposition followed by sintering due to better electron capturing capacity of deposited metals and growth of crystalline ZnS phase with less surface defects.

  20. Correlation between photoconductivity in nanocrystalline titania and short circuit current transients in MEH-PPV/titania solar cells

    NASA Astrophysics Data System (ADS)

    Xie, Z. B.; Henry, B. M.; Kirov, K. R.; Barkhouse, D. A. R.; Burlakov, V. M.; Smith, H. E.; Grovenor, C. R. M.; Assender, H. E.; Briggs, G. A. D.; Kano, M.; Tsukahara, Y.

    2007-04-01

    We report the first experimental observation of a direct relationship between electron transport in different nanocrystalline TiO2 thin films and the photovoltaic performance of TiO2 /MEH-PPV composite solar cells made using these same TiO2 films. We show that the transient behaviour in the composite solar cells under illumination can be explained by the transient photoconductivity performance of the TiO2 layer.

  1. Two-step synthesis of luminescent MoS2-ZnS hybrid quantum dots

    NASA Astrophysics Data System (ADS)

    Clark, Rhiannon M.; Carey, Benjamin J.; Daeneke, Torben; Atkin, Paul; Bhaskaran, Madhu; Latham, Kay; Cole, Ivan S.; Kalantar-Zadeh, Kourosh

    2015-10-01

    A surfactant assisted technique has been used to promote the exfoliation of molybdenum disulphide (MoS2) in a water-ethanol mixture, to avoid the use of harsh organic solvents, whilst still producing sufficient concentration of MoS2 in suspension. The exfoliated flakes are converted into MoS2 quantum dots (QDs), through a hydrothermal procedure. Alternatively, when the flakes are processed with precursors for zinc sulphide (ZnS) synthesis, a simultaneous break-down and composite growth is achieved. The products are separated by centrifugation, into large ZnS spheres (200-300 nm) and small MoS2-ZnS hybrid QD materials (<100 nm), of which, the latter show favorable optical properties. Two concurrent photoluminescent (PL) peaks are seen at 380 and 450 nm, which are assigned to MoS2 and ZnS components of QDs, respectively. The PL emission from MoS2-ZnS QDs is of high energy and is more intense than the bare MoS2 flakes or QDs, with a quantum yield as high as 1.96%. The emission wavelength is independent from the excitation wavelength and does not change over time. Due to such properties, the developed hybrid QDs are potentially suitable for imaging and sensing applications.A surfactant assisted technique has been used to promote the exfoliation of molybdenum disulphide (MoS2) in a water-ethanol mixture, to avoid the use of harsh organic solvents, whilst still producing sufficient concentration of MoS2 in suspension. The exfoliated flakes are converted into MoS2 quantum dots (QDs), through a hydrothermal procedure. Alternatively, when the flakes are processed with precursors for zinc sulphide (ZnS) synthesis, a simultaneous break-down and composite growth is achieved. The products are separated by centrifugation, into large ZnS spheres (200-300 nm) and small MoS2-ZnS hybrid QD materials (<100 nm), of which, the latter show favorable optical properties. Two concurrent photoluminescent (PL) peaks are seen at 380 and 450 nm, which are assigned to MoS2 and ZnS components of

  2. Facile preparation of nanocrystalline gallium antimonide

    SciTech Connect

    Baldwin, R.A.; Foos, E.E.; Wells, R.L.

    1997-02-01

    The 1:1 reaction of GaCl3 with Sb(SiMe{sub 3}){sub 3} in pentane solution affords an intermediate material which, upon thermolysis, yields nanocrystalline GaSb with an approximate average particle size of 12 nm. The product was characterized through powder X-ray diffraction, elemental analysis, and HRTEM.

  3. Approaching Bulk Carrier Dynamics in Organo-Halide Perovskite Nanocrystalline Films by Surface Passivation.

    PubMed

    Stewart, Robert J; Grieco, Christopher; Larsen, Alec V; Maier, Joshua J; Asbury, John B

    2016-04-01

    The electronic properties of organo-halide perovskite absorbers described in the literature have been closely associated with their morphologies and processing conditions. However, the underlying origins of this dependence remain unclear. A combination of inorganic synthesis, surface chemistry, and time-resolved photoluminescence spectroscopy was used to show that charge recombination centers in organo-halide perovskites are almost exclusively localized on the surfaces of the crystals rather than in the bulk. Passivation of these surface defects causes average charge carrier lifetimes in nanocrystalline thin films to approach the bulk limit reported for single-crystal organo-halide perovskites. These findings indicate that the charge carrier lifetimes of perovskites are correlated with their thin-film processing conditions and morphologies through the influence these have on the surface chemistry of the nanocrystals. Therefore, surface passivation may provide a means to decouple the electronic properties of organo-halide perovskites from their thin-film processing conditions and corresponding morphologies. PMID:26966792

  4. Corrosion and hydrogen embrittlement of nanocrystalline nickel

    NASA Astrophysics Data System (ADS)

    Desai, Tapas

    Nanocrystalline (nc) materials have attracted the interest of the scientific community because of their unique physical and mechanical properties. However, limited research has been performed to analyze their electrochemical behavior. The majority of research in the field of electrochemical and corrosion behavior exists for electrodeposited nanocrystalline metals. This research studies the behavior of sputter-deposited nc Nickel films in corrosive and hydrogen environment by potentiodynamic polarization and microindentation. The surface morphology and composition of the samples was examined by Scanning Electron Microscopy and Energy Dispersive X-Ray spectroscopy. Bulk Ni samples exhibit mild passivation in 3.5 % NaCl solution. The surface reveals a fine distribution of small pits and numerous large pits. However, nc Ni films show a higher corrosion potential, but lower corrosion rate. This can be attributed to the rapid formation of a passive film to resist the corrosion, and better purity of sputtered films. A very uniform and periodic corrosion pattern is observed on the surface, without any pitting. In 0.1 N H2 SO4 solution, active dissolution of Ni was observed in both bulk and nanocrystalline samples. This is due to the absence of passivation for Ni in this environment. Nc Ni shows a higher corrosion rate and higher anodic corrosion potential. This behavior is attributed to a higher density of grain boundaries that act as a catalyst to the hydrogen reduction reaction and increase the corrosion rate. Effect of electrochemically charged hydrogen was observed for bulk and nanocrystalline Nickel. Bulk Ni displayed a slight increase in hardness and signs of hydrogen induced plastic deformation. On the other hand, the nanocrystalline Ni shows brittle failure by buckling and spalling. This is attributed to its limited ductility and the high density that act as preferred sites for hydrogen adsorption and subsequently enhance hydrogen diffusion, leading to

  5. Synthesis and characterization of nanocrystalline silicide compounds

    SciTech Connect

    Karen, B.

    1992-01-03

    This thesis involves the investigation into the production of nanocrystalline silicide compounds by radio frequency inductively coupled plasma (RF-ICP) and mechanical milling. A system constructed which utilized a RF-ICP, a powder feed system and a condensation / collection chamber to produce nanocrystalline materials. Several silicides, such as Ti{sub 5}Si{sub 3}, Cr{sub 3}Si and MoSi{sub 2}, were fed into the plasma were they vaporized. The vaporized material then passed into a connecting chamber, where it condensed out of the vapor phase and the resulting powder was collected. Much of the work conducted was in designing and building of the systems components. This was followed by establishing the plasmas operating parameters. The material collected from the ICP chamber was then compared to material produced by mechanical milling. The material produced by both methods were characterized by x-ray diffraction, scanning and transmission-electron microscopy, and energy dispersive spectroscopy. The results indicate that it is possible to produce nanocrystalline material by mechanical milling; however, there is a significant amount of contamination from the milling ball and milling container. The results also show that the Ti{sub 5}Si{sub 3} and Cr{sub 3}Si compounds can be produced in nanocrystalline form by the ICP method. The resultant material collected from the ICP chamber following the MoSi{sub 2} run consisted of nanocrystalline Si and crystalline, Mo rich Si compound. Inductively coupled plasma - atomic emission spectroscopy (ICP-AES) was also used to observe the powders as they passed through the plasma. The resulting data indicates that each compound was vaporized and dissociated in the plasma. The following thesis describes the apparatus and experimental procedure used in producing nanocrystals.

  6. Chemical vapor synthesis of nanocrystalline perovskites using laser flash evaporation of low volatility solid precursors

    NASA Astrophysics Data System (ADS)

    Winterer, Markus; Srdic, Vladimir V.; Djenadic, Ruzica; Kompch, Alexander; Weirich, Thomas E.

    2007-12-01

    One key requirement for the production of multinary oxide films by chemical vapor deposition (CVD) or nanocrystalline multinary oxides particles by chemical vapor synthesis (CVS) is the availability of precursors with high vapor pressure. This is especially the case for CVS where much higher production rates are required compared to thin films prepared by CVD. However, elements, which form low valent cations such as alkaline earth metals, are typically only available as solid precursors of low volatility, e.g., in form of β-diketonates. This study describes laser flash evaporation as precursor delivery method for CVS of nanocrystalline perovskites. Laser flash evaporation exploits the nonequilibrium evaporation of solid metal organic precursors of low vapor pressure by absorption of the infrared radiation of a CO2 laser. It is shown that stoichiometric, nanocrystalline particles consisting of SrZrO3 and SrTiO3 can be formed from corresponding mixtures of β-diketonates which are evaporated nonselectively and with high rates by laser flash evaporation.

  7. Chemical vapor synthesis of nanocrystalline perovskites using laser flash evaporation of low volatility solid precursors.

    PubMed

    Winterer, Markus; Srdic, Vladimir V; Djenadic, Ruzica; Kompch, Alexander; Weirich, Thomas E

    2007-12-01

    One key requirement for the production of multinary oxide films by chemical vapor deposition (CVD) or nanocrystalline multinary oxides particles by chemical vapor synthesis (CVS) is the availability of precursors with high vapor pressure. This is especially the case for CVS where much higher production rates are required compared to thin films prepared by CVD. However, elements, which form low valent cations such as alkaline earth metals, are typically only available as solid precursors of low volatility, e.g., in form of beta-diketonates. This study describes laser flash evaporation as precursor delivery method for CVS of nanocrystalline perovskites. Laser flash evaporation exploits the nonequilibrium evaporation of solid metal organic precursors of low vapor pressure by absorption of the infrared radiation of a CO(2) laser. It is shown that stoichiometric, nanocrystalline particles consisting of SrZrO(3) and SrTiO(3) can be formed from corresponding mixtures of beta-diketonates which are evaporated nonselectively and with high rates by laser flash evaporation. PMID:18163736

  8. Design and investigation of properties of nanocrystalline diamond optical planar waveguides.

    PubMed

    Prajzler, Vaclav; Varga, Marian; Nekvindova, Pavla; Remes, Zdenek; Kromka, Alexander

    2013-04-01

    Diamond thin films have remarkable properties comparable with natural diamond. Because of these properties it is a very promising material for many various applications (sensors, heat sink, optical mirrors, chemical and radiation wear, cold cathodes, tissue engineering, etc.) In this paper we report about design, deposition and measurement of properties of optical planar waveguides fabricated from nanocrystalline diamond thin films. The nanocrystalline diamond planar waveguide was deposited by microwave plasma enhanced chemical vapor deposition and the structure of the deposited film was studied by scanning electron microscopy and Raman spectroscopy. The design of the presented planar waveguides was realized on the bases of modified dispersion equation and was schemed for 632.8 nm, 964 nm, 1 310 nm and 1 550 nm wavelengths. Waveguiding properties were examined by prism coupling technique and it was found that the diamond based planar optical element guided one fundamental mode for all measured wavelengths. Values of the refractive indices of our NCD thin film measured at various wavelengths were almost the same as those of natural diamond. PMID:23571931

  9. Evolution of ZnS Nanoparticles via Facile CTAB Aqueous Micellar Solution Route: A Study on Controlling Parameters

    PubMed Central

    2009-01-01

    Synthesis of semiconductor nanoparticles with new photophysical properties is an area of special interest. Here, we report synthesis of ZnS nanoparticles in aqueous micellar solution of Cetyltrimethylammonium bromide (CTAB). The size of ZnS nanodispersions in aqueous micellar solution has been calculated using UV-vis spectroscopy, XRD, SAXS, and TEM measurements. The nanoparticles are found to be polydispersed in the size range 6–15 nm. Surface passivation by surfactant molecules has been studied using FTIR and fluorescence spectroscopy. The nanoparticles have been better stabilized using CTAB concentration above 1 mM. Furthermore, room temperature absorption and fluorescence emission of powdered ZnS nanoparticles after redispersion in water have also been investigated and compared with that in aqueous micellar solution. Time-dependent absorption behavior reveals that the formation of ZnS nanoparticles depends on CTAB concentration and was complete within 25 min. PMID:20592958

  10. New observations on the luminescence decay lifetime of Mn2+ in ZnS :Mn2+ nanoparticles

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Aguekian, Vadim F.; Vassiliev, Nikolai; Serov, A. Yu.; Filosofov, N. G.

    2005-09-01

    A fast decay emission peaking at 645nm with a decay lifetime within the experimental resolution of 0.14μs is observed in ZnS :Mn2+ nanoparticles. This short-lived signal is also observed in pure ZnS and MgS :Eu3+ nanoparticles, which has nothing to do with Mn2+-doped ions but is from the deep trap states of the host materials. The short-lived component decreases in intensity relative to the Mn2+ emission at higher excitation powers, while it increases in intensity at low temperatures and shifts to longer wavelengths at longer time delays. Our observations demonstrated further that the emission of Mn2+ in ZnS :Mn2+ nanoparticles behaves basically the same as in bulk ZnS :Mn2+; the fast decay component is actually from the intrinsic and defect-related emission in sulfide compounds.

  11. Variability in Chemical Vapor Deposited Zinc Sulfide: Assessment of Legacy and International CVD ZnS Materials

    SciTech Connect

    McCloy, John S.; Korenstein, Ralph

    2009-10-06

    Samples of CVD ZnS from the United States, Germany, Israel, and China were evaluated using transmission spectroscopy, x-ray diffraction, photoluminescence, and biaxial flexure testing. Visible and near-infrared scattering, 6 μm absorption, and ultraviolet cut-on edge varied substantially in tested materials. Crystallographic hexagonality and texture was determined and correlated with optical scattering. Transmission cut-on (ultraviolet edge) blue-shifts with annealing and corresponds to visible color but not the 6 μm absorption. Photoluminescence results suggest that CVD ZnS exhibits a complex suite of electronic bandgap defects. All CVD ZnS tested with biaxial flexure exhibit similar fracture strength values and Weibull moduli. This survey suggests that technical understanding of the structure and optical properties CVD ZnS is still in its infancy.

  12. Two and four photon absorption and nonlinear refraction in undoped, chromium doped and copper doped ZnS quantum dots

    NASA Astrophysics Data System (ADS)

    Sharma, Dimple; Malik, B. P.; Gaur, Arun

    2015-12-01

    The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV-vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3-5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β2), nonlinear refractive index (n2), third order nonlinear susceptibility (χ3) at wavelength 532 nm and Four photon absorption coefficient (β4) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.

  13. Effect of effective mass and spontaneous polarization on photocatalytic activity of wurtzite and zinc-blende ZnS

    SciTech Connect

    Dong, Ming; Zhang, Jinfeng; Yu, Jiaguo

    2015-10-01

    Semiconductor zinc sulphide (ZnS) has two common phases: hexagonal wurtzite and cubic zinc-blende structures. The crystal structures, energy band structures, density of states (DOS), bond populations, and optical properties of wurtzite and zinc-blende ZnS were investigated by the density functional theory of first-principles. The similar band gaps and DOS of wurtzite and zinc-blende ZnS were found and implied the similarities in crystal structures. However, the distortion of ZnS{sub 4} tetrahedron in wurtzite ZnS resulted in the production of spontaneous polarization and internal electric field, which was beneficial for the transfer and separation of photogenerated electrons and holes.

  14. A novel drug delivery of 5-fluorouracil device based on TiO2/ZnS nanotubes.

    PubMed

    Faria, Henrique Antonio Mendonça; de Queiroz, Alvaro Antonio Alencar

    2015-11-01

    The structural and electronic properties of titanium oxide nanotubes (TiO2) have attracted considerable attention for the development of therapeutic devices and imaging probes for nanomedicine. However, the fluorescence response of TiO2 has typically been within ultraviolet spectrum. In this study, the surface modification of TiO2 nanotubes with ZnS quantum dots was found to produce a red shift in the ultra violet emission band. The TiO2 nanotubes used in this work were obtained by sol-gel template synthesis. The ZnS quantum dots were deposited onto TiO2 nanotube surface by a micelle-template inducing reaction. The structure and morphology of the resulting hybrid TiO2/ZnS nanotubes were investigated by scanning electron microscopy, transmission electron microscopy and X-ray diffraction techniques. According to the results of fluorescence spectroscopy, pure TiO2 nanotubes exhibited a high emission at 380nm (3.26eV), whereas TiO2/ZnS exhibited an emission at 410nm (3.02eV). The TiO2/ZnS nanotubes demonstrated good bio-imaging ability on sycamore cultured plant cells. The biocompatibility against mammalian cells (Chinese Hamster Ovarian Cells-CHO) suggesting that TiO2/ZnS may also have suitable optical properties for use as biological markers in diagnostic medicine. The drug release characteristic of TiO2/ZnS nanotubes was explored using 5-fluorouracil (5-FU), an anticancer drug used in photodynamic therapy. The results show that the TiO2/ZnS nanotubes are a promising candidate for anticancer drug delivery systems. PMID:26249588

  15. Preparation of Cr-doped ZnS nanosheets with room temperature ferromagnetism via a solvothermal route

    NASA Astrophysics Data System (ADS)

    Zhang, Zhufeng; Li, Jin; Jian, Jikang; Wu, Rong; Sun, Yanfei; Wang, Shengfeng; Ren, Yinshuan; Li, Jiajie

    2013-06-01

    ZnS semiconductor nanosheets doped with different amounts of chromium have been successfully produced via the solvothermal reaction of ZnO and S with CrCl3·6H2O in mixed solvents of ethylenediamine and ethanolamine at 180 °C. X-ray diffraction (XRD) measurements demonstrated that the Cr-doped ZnS nanocrystals had a wurtzite structure. Scanning electron microscopy (SEM) images revealed that the morphologies of ZnS doped with high amounts of chromium consisted of regular nanosheets. Zn1-xCrxS (x=0.0934 or 0.1170) nanosheets produced a regular morphology with thicknesses of 50-100 nm, widths of 300 nm and lengths of 1 µm. This product, composed of Cr, Zn, and S, was observed by an energy dispersive spectrometer (EDS). A vibrating sample magnetometer (VSM) showed that the Cr-doped ZnS nanosheets exhibited ferromagnetism at room temperature, while the pure ZnS nanosheets exhibited diamagnetism. The saturation magnetization of the Cr-doped ZnS nanosheets increased with increasing Cr concentration over the range of x=0.0241-0.0934. The saturation magnetization of the Zn1-xCrxS (x=0.0934) nanosheets was 8.6492 (10-3 emu/g). The experimental results confirmed that Cr-doped ZnS nanosheets exhibit ferromagnetism at room temperature, in good agreement with the ferromagnetic properties of Cr-doped ZnS that were predicted by first-principles computations.

  16. Anomalous grain growth in the surface region of a nanocrystalline CeO2 film under low-temperature heavy ion irradiation

    SciTech Connect

    Edmondson, Philip D.; Zhang, Yanwen; Moll, Sandra J.; Varga, Tamas; Namavar, Fereydoon; Weber, William J.

    2012-06-15

    Grain growth and phase stability of nanocrystalline ceria are investigated under ion irradiation at different temperatures. Irradiations at temperatures of 300 and 400 K result in uniform grain growth throughout the film. Anomalous grain growth is observed in thin films of nanocrystalline ceria under 3 MeV Au+ irradiation at 160 K. At this low temperature, significant grain growth is observed within 100 nm from the surface, no obvious growth is detected in the rest of the films. While the grain growth is attributed to a defect-stimulated mechanism at room temperature and above, a defect diffusion-limited mechanism is significant at low temperature with the primary defect responsible being the oxygen vacancy. The nanocrystalline grains remain in the cubic phase regardless of defect kinetics.

  17. Structure and optical properties of one-dimensional ZnS nanostructures synthesized using a single evaporation process

    NASA Astrophysics Data System (ADS)

    Jin, Changhyun; Kim, Hyunsu; Park, Sunghoon; An, Soyeon; Lee, Chongmu

    2013-11-01

    Zinc sulfide (ZnS) nanostructures with different morphologies and microstructures were synthesized using a single thermal evaporation process. The microstructure and photoluminescence properties of the ZnS nanowires produced in four different temperature zones were examined. Scanning electron microscopy showed that as the substrate temperature decreased, the morphology of the ZnS nanowires changed from a longer curved morphology to a shorter earthworm-like morphology. X-ray diffraction (XRD) shows that all samples were mixtures of a zincblende-structured ZnS phase and a wurtzite-structured ZnS phase and that dominance of the zincblende phase tends to increase with decreasing substrate temperature. The zincblende phase appeared to be dominant regardless of the substrate temperature. A closer comparison of the XRD patterns of the products in the different temperature zones showed that dominance of the zincblende phase tends to increase with decreasing substrate temperature. Photoluminescence spectroscopy revealed a decrease in emission intensity with decreasing substrate temperature. ZnS nanostructures synthesized in temperature zones 2, 3 and 4 (∼ 900, ∼ 800 and ∼ 700 °C, respectively) showed green emission, whereas those synthesized in temperature zone 5 (∼ 600 °C) showed yellow emission. The origins of the emissions are also discussed.

  18. Light-activated NO2 gas sensing of the networked CuO-decorated ZnS nanowire gas sensor

    NASA Astrophysics Data System (ADS)

    Park, Sunghoon; Sun, Gun-Joo; Kheel, Hyejoon; Ko, Taegyung; Kim, Hyoun Woo; Lee, Chongmu

    2016-05-01

    CuO-decorated ZnS nanowires were synthesized by the thermal evaporation of ZnS powders followed by a solvothermal process for CuO decoration. The NO2 gas sensing properties of multiple-networked pristine and CuO-decorated ZnS nanowire sensors were then examined. The diameters of the CuO nanoparticles ranged from 20 to 60 nm. The multiple-networked pristine and CuO-decorated ZnS nanowire sensors showed the responses of 394 and 1055 %, respectively, to 5 ppm of NO2 at room temperature under UV illumination at 2.2 mW/cm2. The response and recovery times of the ZnS nanowire sensor to 5 ppm of NO2 were also reduced by decoration with the CuO nanoparticles. The responses of the sensors to NO2 at room temperature increased significantly with increasing UV illumination intensity. The underlying mechanisms for the enhanced response of the ZnS nanowire sensor to NO2 gas by CuO decoration and UV irradiation are discussed.

  19. Synthesis and luminescence properties of ZnS and metal (Mn, Cu)-doped-ZnS ceramic powder

    NASA Astrophysics Data System (ADS)

    Ummartyotin, S.; Bunnak, N.; Juntaro, J.; Sain, M.; Manuspiya, H.

    2012-03-01

    ZnS and metal (Mn, Cu)-doped-ZnS were successfully prepared by wet chemical synthetic route. The understanding of substituted metal ions (Mn, Cu) into ZnS leads to transfer the luminescent centre by small amount of metal dopant (Mn, Cu). Fourier transform infrared and X-ray diffraction were used to determine chemical bonding and crystal structure, respectively. It showed that small amount of metal (Mn, Cu) can be completely substituted into ZnS lattice. X-ray fluorescence was used to confirm the existence of metal-doped ZnS. Scanning electron microscope revealed that their particles exhibits blocky particle with irregular sharp. Laser confocal microscope and photoluminescence spectroscopy showed that ZnS and metal-doped-ZnS exhibited intense, stable, and tunable emission covering the blue to red end of the visible spectrum. ZnS, Mn-doped-ZnS and Cu-doped-ZnS generated blue, yellow and green color, respectively.

  20. Magnetic properties of first-row element-doped ZnS semiconductors: A density functional theory investigation

    NASA Astrophysics Data System (ADS)

    Long, Run; English, Niall J.

    2009-09-01

    Based on first-principles calculations, we have investigated the magnetic properties of the first-row element-doped ZnS semiconductors. Calculations reveal that Be, B, and C dopants can induce magnetism while N cannot lead to spin polarization in ZnS. A possible explanation has been rationalized from the elements’ electronegativity and interaction between dopant and host atoms. The total magnetic moments are 2.00, 3.16, and 2.38μB per 2×2×2 supercell for Be, B, and C doping, respectively, and ferromagnetic coupling is generally observed in these cases. The ferromagnetism of Be-, B-, and C-doped ZnS can be explained by hole-mediated s-p or p-p interactions’ coupling mechanisms. The clustering effect was found to be present in Be-, B-, and C-doped ZnS but the degree is more obvious in the former two cases than in the latter case. Analysis revealed that C-doped ZnS displays better potential ferromagnetic behavior than Be- and B-doped ZnS due to its semimetallic characteristics.

  1. An efficient method to enhance the stability of sulphide semiconductor photocatalysts: a case study of N-doped ZnS.

    PubMed

    Zhou, Yansong; Chen, Gang; Yu, Yaoguang; Feng, Yujie; Zheng, Yi; He, Fang; Han, Zhonghui

    2015-01-21

    Reducing the oxidative capacity of holes (h(+)) in the valence band (VB) of ZnS is one of the most effective ways to prevent the photocatalyst from photocorrosion. In this work, ZnS doped only with nitrogen was prepared for the first time by nitriding ZnS powder in an NH3 atmosphere. We demonstrate theoretically and experimentally that the valence band maximum (VBM) rises obviously by N-doping in ZnS, suggesting the reduction of the oxidative capacity of holes (h(+)) in the valence band. The theoretically predicted band structures were further verified by valence band X-ray photoelectron spectroscopy (VB XPS) and Mott-Schottky measurements. The as-prepared N-doped ZnS exhibited an outstanding stable capability for photocatalytic hydrogen evolution from water under simulated sunlight irradiation for 12 h. However, pristine ZnS showed no capability and was seriously photocorroded under the same conditions. PMID:25474654

  2. Microemulsion-based synthesis of nanocrystalline materials.

    PubMed

    Ganguli, Ashok K; Ganguly, Aparna; Vaidya, Sonalika

    2010-02-01

    Microemulsion-based synthesis is found to be a versatile route to synthesize a variety of nanomaterials. The manipulation of various components involved in the formation of a microemulsion enables one to synthesize nanomaterials with varied size and shape. In this tutorial review several aspects of microemulsion based synthesis of nanocrystalline materials have been discussed which would be of interest to a cross-section of researchers working on colloids, physical chemistry, nanoscience and materials chemistry. The review focuses on the recent developments in the above area with current understanding on the various factors that control the structure and dynamics of microemulsions which can be effectively used to manipulate the size and shape of nanocrystalline materials. PMID:20111772

  3. Interconnected Si nanocrystals forming thin films with controlled bandgap values

    SciTech Connect

    Nychyporuk, T.; Zakharko, Yu.; Lysenko, V.; Lemiti, M.

    2009-08-24

    Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.

  4. DNA attachment to nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Wenmackers, S.; Christiaens, P.; Daenen, M.; Haenen, K.; Nesládek, M.; van Deven, M.; Vermeeren, V.; Michiels, L.; Ameloot, M.; Wagner, P.

    2005-09-01

    A biochemical method to immobilize DNA on synthetic diamond for biosensor applications is developed. Nanocrystalline diamond is grown using microwave plasma-enhanced chemical vapour deposition. On the hydrogen-terminated surface 10-undecenoic acid is tethered photochemically under 254 nm illumination, followed by 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide crosslinker-mediated attachment of amino modified DNA. The attachment is functionally confirmed by comparison of supernatant fluorescence and gel electrophoresis. The linking procedure allowed for 35 denaturation and rehybridisation steps.

  5. Optical nonlinear dynamics in ZnS from femtosecond laser pulses

    SciTech Connect

    Wu, Yu-E; Ren, Mengxin Wang, Zhenhua; Li, Wenhua; Wu, Qiang; Zhang, Xinzheng Xu, Jingjun; Synergetic Innovation Center of Chemical Science and Engineering, Tianjin 300071 ; Yi, Sanming

    2014-05-15

    A wavelength swapping nondegenerate pump-probe technique to measure the magnitudes of the nonlinear optical dynamics as well as the relaxation time of electrons in high energy levels is presented using a ZnS single crystal wafer as an example. By pumping the sample with 800 nm femtosecond pulses and probing at 400 nm, nondegenerate two-photon absorption (N-2PA) happens exclusively, and the measured curves only show instantaneous features without relaxation tails. The N-2PA coefficient was derived explicitly as 7.52 cm/GW. Additionally, when the wavelengths of the pump and probe beams are swapped, extra information about the relaxation time of the hot electrons excited in the conduction band is obtained. The combined results above are helpful for evaluating the characteristics of an optical switches based on ZnS or other materials with respect to its nonlinear optical dynamic aspect.

  6. Optical and structural studies of ZnS nanoparticles synthesized via chemical in situ technique

    NASA Astrophysics Data System (ADS)

    Mamiyev, Zamin Q.; Balayeva, Narmina O.

    2016-02-01

    ZnS nanoparticles (NPs) have been synthesized by the facile chemical route with a narrow size distribution in the MA/octene-1 copolymer matrix and effect of reaction time has been discussed. X-ray diffraction pattern confirms the pure cubic phase of ZnS with 5-7 nm average crystal sizes which are in good agreement with the AFM and UV-vis measurements. Absorption spectra exhibit a strong blue shift from the bulk with the 3.98 eV optical band gap which clearly indicates the strong size confinement effect. Thermogravimetric analyses show increased thermal stability of the nanocomposite compared to the copolymer. The possible growth mechanism of the particles formation and stabilization has been discussed.

  7. Fabrication of conformal ZnS domes by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Goela, Jitendra S.; Askinazi, Joel

    1999-07-01

    Aspheric shape ZnS domes were fabricated by a scalable and cost-effective chemical vapor deposition (CVD) process to demonstrate the feasibility of producing aerodynamic domes that conform to the shape of the missile body. These domes provide enhanced performance by substantially reducing the missile drag, although they also present issues of CVD deposition, optical fabrication to the required figure and finish, particularly the inside surface, and metrology. Domes were fabricated on 'male' mandrels in a CVD chamber to produce net-shape or precision replicated inside surface and then diamond turned to produce surfaces with figure of a fraction of a wave and finish of 180 angstrom RMS. Important issues involved in near-net-shaping and precision replication of ZnS domes are discussed and data on mandrel and release coating materials, degree of replication achieved and mandrel durability are presented.

  8. Rational synthetic strategy: From ZnO nanorods to ZnS nanotubes

    NASA Astrophysics Data System (ADS)

    Yi, Ran; Qiu, Guanzhou; Liu, Xiaohe

    2009-10-01

    We demonstrate here that ZnS nanotubes can be successfully synthesized via a facile conversion process from ZnO nanorods precursors. During the conversion process, ZnO nanorods are first prepared as sacrificial templates and then converted into tubular ZnO/ZnS core/shell naonocomposites through a hydrothermal sulfidation treatment by using thioacetamide (TAA) as sulfur source. ZnS nanotubes are finally obtained through the removal of ZnO cores of tubular ZnO/ZnS core/shell naonocomposites by KOH treatment. The photoluminescence (PL) characterization of the as-prepared products shows much enhanced PL emission of tubular ZnO/ZnS core/shell nanocomposites compared with their component counterparts. The probable mechanism of conversion process is also proposed based on the experimental results.

  9. Minimizing artifact formation in magnetorheological finishing of chemical vapor deposition ZnS flats.

    PubMed

    Kozhinova, Irina A; Romanofsky, Henry J; Maltsev, Alexander; Jacobs, Stephen D; Kordonski, William I; Gorodkin, Sergei R

    2005-08-01

    The polishing performance of magnetorheological (MR) fluids prepared with a variety of magnetic and nonmagnetic ingredients was studied on four types of initial surface for chemical vapor deposition (CVD) ZnS flats from domestic and foreign sources. The results showed that it was possible to greatly improve smoothing performance of magnetorheological finishing (MRF) by altering the fluid composition, with the best results obtained for nanoalumina abrasive used with soft carbonyl iron and altered MR fluid chemistry. Surface roughness did not exceed 20 nm peak to valley and 2 nm rms after removal of 2 microm of material. The formation of orange peel and the exposure of a pebblelike structure inherent in ZnS from the CVD process were suppressed. PMID:16075880

  10. High-resolution three-photon biomedical imaging using doped ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Yu, Jung Ho; Kwon, Seung-Hae; Petrášek, Zdeněk; Park, Ok Kyu; Jun, Samuel Woojoo; Shin, Kwangsoo; Choi, Moonkee; Park, Yong Il; Park, Kyeongsoon; Na, Hyon Bin; Lee, Nohyun; Lee, Dong Won; Kim, Jeong Hyun; Schwille, Petra; Hyeon, Taeghwan

    2013-04-01

    Three-photon excitation is a process that occurs when three photons are simultaneously absorbed within a luminophore for photo-excitation through virtual states. Although the imaging application of this process was proposed decades ago, three-photon biomedical imaging has not been realized yet owing to its intrinsic low quantum efficiency. We herein report on high-resolution in vitro and in vivo imaging by combining three-photon excitation of ZnS nanocrystals and visible emission from Mn2+ dopants. The large three-photon cross-section of the nanocrystals enabled targeted cellular imaging under high spatial resolution, approaching the theoretical limit of three-photon excitation. Owing to the enhanced Stokes shift achieved through nanocrystal doping, the three-photon process was successfully applied to high-resolution in vivo tumour-targeted imaging. Furthermore, the biocompatibility of ZnS nanocrystals offers great potential for clinical applications of three-photon imaging.

  11. Synthesis and characterization of ZnS nanowires by AOT micelle-template inducing reaction

    SciTech Connect

    Lv Ruitao; Cao Chuanbao; Zhu Hesun

    2004-08-03

    ZnS nanowires, with diameters around 30 nm and lengths up to 2.5 {mu}m, had been successfully synthesized from solutions containing an anionic surfactant, sodium bis(2-ethylhexyl)sulfosuccinate (AOT). Powder X-ray diffraction (XRD) pattern, energy-dispersive X-ray spectroscopy (EDS) and selected-area electron diffraction (SAED) pattern indicated that the product was pure polycrystalline cubic-phase {beta}-ZnS. The morphology and size of the as-synthesized product were determined by the transmission electron microscopy (TEM). The effects of some of the key reaction parameters (such as the ratio of surfactant to water, the reactant concentration and reaction temperature, etc.) had been explored in this paper. A growth mechanism of ZnS nanowires by micelle-template inducing reaction was also proposed.

  12. Synthesis and characterization of Zn 3P 2/ZnS core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Sun, T.; Wu, P. C.; Guo, Z. D.; Dai, Y.; Meng, H.; Fang, X. L.; Shi, Z. J.; Dai, L.; Qin, G. G.

    2011-05-01

    Fully-surrounded Zn3P2/ZnS core/shell nanowires (NWs) were synthesized for the first time via a two-step method: a catalyst free chemical vapor deposition followed by a low-pressure vulcanization process. Field emission scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle angular dark field scanning transmission electron microscopy were used to characterize the morphologies, crystal structure, and element composition of the core/shell NWs. The band structure analysis demonstrates that the Zn3P2/ZnS core-shell NW type-II heterostructures have bright potential in photovoltaic nanodevice applications. The core/shell NW growth method used here can be extended to other material system.

  13. Study of interatomic potentials in ZnS -- Crystal-GRID experiments versus ab initio calculations

    SciTech Connect

    Koch, T.; Heinig, K.H.; Jentschel, M.; Boerner, H.G.

    2000-02-01

    Crystal-GRID measurements have been performed with ZnS single crystals. For the first time, an asymmetric Crystal-GRID line shape could be observed. The preliminary data evaluation indicates that the reported lifetime of the 3221 keV level in {sup 33}S is too short. A value of about 60 fs has been found. Due to this long lifetime the line shape is much less structured than calculated with the reported lifetime.

  14. Synthesis, characterization and optical properties of polymer-based ZnS nanocomposites.

    PubMed

    Tiwari, A; Khan, S A; Kher, R S; Dhoble, S J; Chandel, A L S

    2016-03-01

    Nanostructured polymer-semiconductor hybrid materials such as ZnS-poly(vinyl alcohol) (ZnS-PVA), ZnS-starch and ZnS-hydroxypropylmethyl cellulose (Zns-HPMC) are synthesized by a facile aqueous route. The obtained nanocomposites are characterized using various techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), UV/vis spectroscopy and photoluminescence (PL). XRD studies confirm the zinc blende phase of the nanocomposites and indicate the high purity of the samples. SEM studies indicate small nanoparticles clinging to the surface of a bigger particle. The Energy Dispersive Analysis by X-rays (EDAX) spectrum reveals that the elemental composition of the nanocomposites consists primarily of Zn:S. FTIR studies indicate that the polymer matrix is closely associated with ZnS nanoparticles. The large number of hydroxyl groups in the polymer matrix facilitates the complexation of metal ions. The absorption spectra of the specimens show a blue shift in the absorption edge. The spectrum reveals an absorption edge at 320, 310 and 325 nm, respectively. PL of nanocomposites shows broad peaks in the violet-blue region (420-450 nm). The emission intensity changes with the nature of capping agent. The PL intensity of ZnS-HPMC nanocomposites is found to be highest among the studied nanocomposites. The results clearly indicate that hydroxyl-functionalized HPMC is much more effective at nucleating and stabilizing colloidal ZnS nanoparticles in aqueous suspensions compared with PVA and starch. PMID:26334003

  15. Low resistivity Al-doped ZnS grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Yasuda, T.; Hara, K.; Kukimoto, H.

    1986-09-01

    Low resistivity Al-doped ZnS layers have been grown by low pressure MOVPE using an adduct of diethylzinc-diethylsulfide (DEZn-DES) and H 2S as source materials and triethylaluminum (TEAl) as a dopant. The lowest resistivity achieved in this study is 3 × 10 -2 Ω cm for layers grown at a temperature of 350°C and at a TEAl transport rate ratio of {[TEAl]}/{[DEZn-DES]} = 4 × 10 -3.

  16. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    NASA Astrophysics Data System (ADS)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  17. Synthesis of Mn-doped ZnS architectures in ternary solution and their optical properties

    NASA Astrophysics Data System (ADS)

    Wang, Xinjuan; Zhang, Qinglin; Zou, Bingsuo; Lei, Aihua; Ren, Pinyun

    2011-10-01

    Mn-doped ZnS sea urchin-like architectures were fabricated by a one-pot solvothermal route in a ternary solution made of ethylenediamine, ethanolamine and distilled water. The as-prepared products were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and photoluminescence spectra (PL). It was demonstrated that the as-prepared sea urchin-like architectures with diameter of 0.5-1.5 μm were composed of nanorods, possessing a wurtzite structures. The preferred growth orientation of nanorods was found to be the [0 0 2] direction. The PL spectra of the Mn-doped ZnS sea urchin-like architectures show a strong orange emission at 587 nm, indicating the successful doping of Mn 2+ ions into ZnS host. Ethanolamine played the role of oriented-assembly agent in the formation of sea urchin-like architectures. A possible growth mechanism was proposed to explain the formation of sea urchin-like architectures.

  18. Structural and surface morphological study of Ni doped ZnS nanoparticles

    SciTech Connect

    Khawal, H. A. Dole, B. N.

    2014-04-24

    Samples of Zn{sub 1−x}Ni{sub x}S (x=0.00, 0.04, 0.08) nanoparticles were synthesized by using the co-precipitation method at room temperature. Structural parameters were investigated by X – ray diffraction (XRD), it reveals that all samples of Ni doped ZnS exhibit the cubic structure with no additional impurity phase. The average crystallite size of all samples is in the range of 2.70 to 2.90 nm. The lattice parameters, X – ray density, volume of unit cell and grain size were calculated using XRD data. It is found that the lattice parameter increases with increasing Ni concentration. Surface morphology of samples was investigated using field emission scanning electron microscopy (FE-SEM). From this study it is concluded that samples exhibit cubic morphology. Chemical compositions of Ni doped and pure ZnS samples were detected using EDAX spectra. It is confirmed from EDAX that Ni substitute into ZnS lattice.

  19. Effect of isovalent dopants on photodegradation ability of ZnS nanoparticles.

    PubMed

    Khaparde, Rohini; Acharya, Smita

    2016-06-15

    Isovalent (Mn, Cd, Cu, Co)-doped-ZnS nanoparticles having size vary in between 2 to 5nm are synthesized by co-precipitation route. Their photocatalytic activity for decoloration of Cango Red and Malachite Green dyes is tested in visible radiation under natural conditions. Structural and morphological features of the samples are investigated by X-ray diffraction, Raman spectroscopy, Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and UVVis spectrometer. Single phase zinc blende structure of as-synthesized undoped and doped-ZnS is confirmed by XRD and revealed by Rietveld fitting. SEM and TEM images show ultrafine nanoparticles having size in the range of 2 to 5nm. UV-Vis absorption spectra exhibit blue shift in absorption edge of undoped and doped ZnS as compared to bulk counterpart. The photocatalytic activity as a function of dopant concentration and irradiation time is systematically studied. The rate of de-coloration of dyes is detected by UVVis absorption spectroscopy and organic dye mineralization is confirmed by table of carbon (TOC) study. The photocatalytic activity of Mn-doped ZnS is highest amongst all dopants; however Co as a dopant is found to reduce photocatalytic activity than pure ZnS. PMID:27037762

  20. Effect of isovalent dopants on photodegradation ability of ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Khaparde, Rohini; Acharya, Smita

    2016-06-01

    Isovalent (Mn, Cd, Cu, Co)-doped-ZnS nanoparticles having size vary in between 2 to 5 nm are synthesized by co-precipitation route. Their photocatalytic activity for decoloration of Cango Red and Malachite Green dyes is tested in visible radiation under natural conditions. Structural and morphological features of the samples are investigated by X-ray diffraction, Raman spectroscopy, Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and UVsbnd Vis spectrometer. Single phase zinc blende structure of as-synthesized undoped and doped-ZnS is confirmed by XRD and revealed by Rietveld fitting. SEM and TEM images show ultrafine nanoparticles having size in the range of 2 to 5 nm. UV-Vis absorption spectra exhibit blue shift in absorption edge of undoped and doped ZnS as compared to bulk counterpart. The photocatalytic activity as a function of dopant concentration and irradiation time is systematically studied. The rate of de-coloration of dyes is detected by UVsbnd Vis absorption spectroscopy and organic dye mineralization is confirmed by table of carbon (TOC) study. The photocatalytic activity of Mn-doped ZnS is highest amongst all dopants; however Co as a dopant is found to reduce photocatalytic activity than pure ZnS.

  1. Diamond/AlN Thin Films for Optical Applications

    SciTech Connect

    Knoebber, F.; Bludau, O.; Williams, O. A.; Sah, R. E.; Kirste, L.; Baeumler, M.; Nebel, C. E.; Ambacher, O.; Cimalla, V.; Lebedev, V.; Leopold, S.; Paetz, D.

    2010-11-01

    In this work we report on membranes made of nanocrystalline diamond (NCD) and AlN for the use in tunable micro-optics. For the growth of the AlN and NCD thin films, magnetron sputtering and chemical vapor deposition techniques have been used, respectively. A chemical-mechanical polishing process of NCD layers has been introduced, which is crucial for the growth of c-oriented, fiber textured AlN films. AlN layers deposited on as grown and polished nanocrystalline diamond along with free standing membranes have been compared by studying microstructure, surface morphology, piezoelectrical response as well as optical properties.

  2. Nanocrystalline hydroxyapatite coatings on titanium: a new fast biomimetic method.

    PubMed

    Bigi, Adriana; Boanini, Elisa; Bracci, Barbara; Facchini, Alessandro; Panzavolta, Silvia; Segatti, Francesco; Sturba, Luigina

    2005-07-01

    We obtained a fast biomimetic deposition of hydroxyapatite (HA) coatings on Ti6Al4V substrates using a slightly supersaturated Ca/P solution, with an ionic composition simpler than that of simulated body fluid (SBF). At variance with other fast deposition methods, which produce amorphous calcium phosphate coatings, the new proposed composition allows one to obtain nanocrystalline HA. Soaking in supersaturated Ca/P solution results in the deposition of a uniform coating in a few hours, whereas SBF, or even 1.5SBF, requires 14 days to deposit a homogeneous coating on the same substrates. The coating consists of HA globular aggregates, which exhibit a finer lamellar structure than those deposited from SBF. The extent of deposition increases on increasing the immersion time. Transmission electron microscope (TEM) images recorded on the material detached from the coating show that the deposition is constituted of thin nanocrystals. Electron diffraction (ED) patterns recorded from most of the crystals exhibit the presence of rings, which can be indexed as reflections characteristic of HA. Furthermore, several HA single-crystal spot ED images were obtained from individual crystals. PMID:15664635

  3. Nanocrystalline diamond films: new material for IR optics

    NASA Astrophysics Data System (ADS)

    Konov, Vitali I.; Obraztsova, E. D.; Pimenov, Sergej M.; Ralchenko, Victor G.; Smolin, Andrey A.; Khomich, A. V.; Polyakov, Vladimir I.; Rukovishnikov, A. I.; Perov, Polievet I.; Loubnin, E. N.

    1995-07-01

    Thin nanocrystalline diamond films promising for IR optical applications were grown on Si substrates from methane-hydrogen gas mixture in a DC arc plasma CVD reactor. Three stages for the synthesis of the highly smooth noncrystalline diamond films are important: (i) substrate pretreatment with ultrafine diamond powder, (ii) excimer laser irradiation of seeded substrates, and (iii) two-step deposition process. A correlation between optical properties of the films and growth conditions has been established by means of Raman spectroscopy, spectroscopic ellipsometry and optical transmission spectroscopy techniques. Surface roughness, which was Ra equals 8 - 40 nm for the 1 micrometers thick films, significantly decreased the transmission in the visible because of light scattering, but it had a negligible effect in the IR range. The films are transparent in the IR and have optical constants n equals 2.34-2.36 and k equals 0.005- 0.03. The hydrogen incorporation in the films in amounts up to 1.5% have been deduced from intensity of C-H absorption band around 2900 cm(superscript -1.

  4. Grain rotation mediated by grain boundary dislocations in nanocrystalline platinum

    PubMed Central

    Wang, Lihua; Teng, Jiao; Liu, Pan; Hirata, Akihiko; Ma, En; Zhang, Ze; Chen, Mingwei; Han, Xiaodong

    2014-01-01

    Grain rotation is a well-known phenomenon during high (homologous) temperature deformation and recrystallization of polycrystalline materials. In recent years, grain rotation has also been proposed as a plasticity mechanism at low temperatures (for example, room temperature for metals), especially for nanocrystalline grains with diameter d less than ~15 nm. Here, in tensile-loaded Pt thin films under a high-resolution transmission electron microscope, we show that the plasticity mechanism transitions from cross-grain dislocation glide in larger grains (d>6 nm) to a mode of coordinated rotation of multiple grains for grains with d<6 nm. The mechanism underlying the grain rotation is dislocation climb at the grain boundary, rather than grain boundary sliding or diffusional creep. Our atomic-scale images demonstrate directly that the evolution of the misorientation angle between neighbouring grains can be quantitatively accounted for by the change of the Frank–Bilby dislocation content in the grain boundary. PMID:25030380

  5. Transparent Nano-Crystalline TiO2 films

    NASA Astrophysics Data System (ADS)

    Sakthivel, K.; Venkatachalam, T.; Renugadevi, R.

    2011-10-01

    Thin films of TiO2 have been deposited on well cleaned glass substrates by Sol-Gel dip-drive coating technique. The films have been prepared at three different pH values (3, 5, and 9) of Sol and annealed in muffle furnace at three distinct temperatures (350 °C, 450 °C, and 550 °C) for one hour and are allowed to cool to room temperature. The films were characterized by XRD, EDAX, SEM and UV-Vis Spectrophotometer. The as deposited films were found to be amorphous in nature. The annealed films exhibit anatase in crystalline structure. The EDAX results have shown that all the films are maintained with TiO2 in composition. The XRD results reveal that they are nano-crystalline in nature and the crystalline nature increases with annealing temperature and pH of the Sol. The transmittance and absorbance spectra have shown that the films are transparent and band gap of the films are of the order of 3 eV. The ab initio studies of TiO2 (using GGA) was performed with Vienna ab initio Simulation package and the band structure and effective masses of the electrons and holes were determined.

  6. Thermal conductivity in nanocrystalline-SiC/C superlattices

    NASA Astrophysics Data System (ADS)

    Habermehl, S.; Serrano, J. R.

    2015-11-01

    The formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C is reported. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed to explain the dependence of the thermal conductivity on the superlattice structure. The results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layer phonon scattering.

  7. Thermal conductivity in nanocrystalline-SiC/C superlattices

    SciTech Connect

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed to explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.

  8. Thermal conductivity in nanocrystalline-SiC/C superlattices

    DOE PAGESBeta

    Habermehl, S.; Serrano, J. R.

    2015-11-17

    We reported the formation of thin film superlattices consisting of alternating layers of nitrogen-doped SiC (SiC:N) and C. Periodically terminating the SiC:N surface with a graphitic C boundary layer and controlling the SiC:N/C thickness ratio yield nanocrystalline SiC grains ranging in size from 365 to 23 nm. Frequency domain thermo-reflectance is employed to determine the thermal conductivity, which is found to vary from 35.5 W m-1 K-1 for monolithic undoped α-SiC films to 1.6 W m-1 K-1 for a SiC:N/C superlattice with a 47 nm period and a SiC:N/C thickness ratio of 11. A series conductance model is employed tomore » explain the dependence of the thermal conductivity on the superlatticestructure. Our results indicate that the thermal conductivity is more dependent on the SiC:N/C thickness ratio than the SiC:N grain size, indicative of strong boundary layerphonon scattering.« less

  9. Correlation of electrochromic properties and oxidation states in nanocrystalline tungsten trioxide.

    PubMed

    Darmawi, S; Burkhardt, S; Leichtweiss, T; Weber, D A; Wenzel, S; Janek, J; Elm, M T; Klar, P J

    2015-06-28

    Although tungsten trioxide (WO3) has been extensively studied since its electrochromic properties were first discovered, the mechanism responsible for the coloration or bleaching effect is still disputed. New insights into the coloration mechanism of electrochromic, nanocrystalline WO3 are provided in this paper by studying thin WO3 films combining the electrochemical and spectroscopic techniques. By employing in situ UV-Vis transmission spectroscopy at a fixed spectral band pass during electrochemical experiments, such as cyclic voltammetry, a two-step insertion process for both protons and lithium ions is identified, of which one step exhibits a significantly higher coloration efficiency than the other. To obtain a better understanding of the insertion process AxWO3 (A = H, Li,…) thin films were studied at different stages of intercalation using UV-Vis and X-ray photoelectron spectroscopy. The results show that the first step of the intercalation process represents the reduction from initial W(6+) to W(5+) and the second step the reduction of W(5+) to W(4+). We found that the blue coloration of this nanocrystalline tungsten trioxide is mainly due to the presence of W(4+) rather than that of W(5+). PMID:26018838

  10. Proton-Conducting Nanocrystalline Ceramics for High-Temperature Hydrogen Sensing

    NASA Astrophysics Data System (ADS)

    Tang, Xiling; Xu, Zhi; Trontz, Adam; Jing, Wenheng; Dong, Junhang

    2014-01-01

    The proton-conductive doped ceramic materials, including SrCe0.95Tb0.05O3-δ (SCTb), SrCe0.8Zr0.1Y0.1O3-δ (SCZY), and SrZr0.95Y0.05O3-δ (SZY), are synthesized in the forms of nanoparticles and nanocrystalline thin films on sapphire wafers and long-period grating (LPG) fibers. The H2 chemisorption and electrical conductivity of the nanocrystalline SCTb, SCZY, and SZY materials are measured at high temperature with and without the presence of CO2 gas. The resonant wavelength shifts ( Updelta λ_{{{{R,H}}_{ 2} }} ) of the SCTb, SCZY, and SZY thin-film coated LPGs in response to H2 concentration changes are studied in gas mixtures relevant to coal gasification syngas to evaluate their potential for high-temperature H2 detection. The results show that, at around 773.15 K (500 °C), SCTb has the highest H2 sensitivity but the most severe interferences from impurities such as CO2 and H2S; SZY has the best chemical resistance to impurities but the lowest H2 sensitivity; and SCZY exhibits high H2 sensitivity with reasonable chemical resistance.

  11. Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

    SciTech Connect

    Garratt, Elias; AlFaify, Salem; Yoshitake, T.; Katamune, Yuki; Bowden, Mark; Nandasiri, Manjula I.; Ghantasala, S.; Mancini, D. C.; Thevuthasan, Suntharampillai; Kayani, A.

    2013-01-11

    This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

  12. Solid state consolidation nanocrystalline copper-tungsten using cold spray

    SciTech Connect

    Hall, Aaron Christopher; Sarobol, Pylin; Argibay, Nicolas; Clark, Blythe; Diantonio, Christopher

    2015-09-01

    It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

  13. The activation energy for nanocrystalline diamond films deposited from an Ar/H2/CH4 hot-filament reactor.

    PubMed

    Barbosa, D C; Melo, L L; Trava-Airoldi, V J; Corat, E J

    2009-06-01

    In this work we have investigated the effect of substrate temperature on the growth rate and properties of nanocrystalline diamond thin films deposited by hot filament chemical vapor deposition (HFCVD). Mixtures of 0.5 vol% CH4 and 25 vol% H2 balanced with Ar at a pressure of 50 Torr and typical deposition time of 12 h. We present the measurement of the activation energy by accurately controlling the substrate temperature independently of other CVD parameters. Growth rates have been measured in the temperature range from 550 to 800 degrees C. Characterization techniques have involved Raman spectroscopy, high resolution X-ray difractometry and scanning electron microscopy. We also present a comparison with most activation energy for micro and nanocrystalline diamond determinations in the literature and propose that there is a common trend in most observations. The result obtained can be an evidence that the growth mechanism of NCD in HFCVD reactors is very similar to MCD growth. PMID:19504946

  14. Optical and mechanical characteristics of nanocrystalline boron carbonitride films synthesized by plasma-assisted physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cao, Z. X.; Oechsner, H.

    2003-01-01

    Nanocrystalline boron carbonitride thin films were prepared using the electron-cyclotron- wave-resonance plasma-assisted deposition, whereby the energy for precursor ions was adjusted between 70 and 180 eV. Fourier-transform infrared spectroscopy confirmed the presence of ternary sp3-bonded structure and high-resolution transmission electron microscopy revealed a punctured lattice. The deposits unfold grains of about 200 nm in dimension under atomic force microscope, yet they exhibit extremely flat surfaces with a root-mean-square roughness less than 3 nm. For a 1.2 μm thick film, the transmittance in the visible light range is as high as 80%. The Vicker's hardness measures over 28 GPa. Therefore, this ternary material is competitive to nanocrystalline diamond in application as protective coatings for optical components. Remarkably, also very strong photoluminescence peaked at 430 nm was detected in the as-deposited films at room temperature.

  15. Temperature-dependent void formation and growth at ion-irradiated nanocrystalline CeO2 Si interfaces

    SciTech Connect

    Perez-Bergquist, Alex G; Zhang, Yanwen; Varga, Tamas; Moll, Sandra; Weber, William J

    2014-01-01

    Ceria is a thermally stable ceramic that has numerous applications in the nuclear industry, including use in nuclear fuels and waste forms. Recently, interest has surged in nanostructured ceria due to its increased mechanical properties and electronic conductivity in comparison with bulk ceria and its ability to self-heal in response to energetic ion bombardment. Here, nanocrystalline ceria thin films grown over a silicon substrate are irradiated to fluences of up to 4 1016 ions/cm2 under different irradiation conditions: with differing ion species (Si+ and Ni+), different ion energies (1.0 1.5 MeV), and at varying temperatures (160 600 K). While the nanocrystalline ceria is found to exhibit exceptional radiation resistance under all tested conditions, severe ion irradiation-induced mixing, void formation, and void growth are observed at the ceria/silicon interface, with the degree of damage proving to be temperature dependent.

  16. Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

    NASA Astrophysics Data System (ADS)

    Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

    2014-10-01

    With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

  17. Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

    SciTech Connect

    Valentini, L. Cardinali, M.; Fortunati, E.; Kenny, J. M.

    2014-10-13

    With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

  18. High contrast hollow-cone dark field transmission electron microscopy for nanocrystalline grain size quantification.

    PubMed

    Yao, Bo; Sun, Tik; Warren, Andrew; Heinrich, Helge; Barmak, Katayun; Coffey, Kevin R

    2010-04-01

    In this paper, we describe hollow-cone dark field (HCDF) transmission electron microscopy (TEM) imaging, with a slightly convergent beam, as an improved technique that is suitable to form high contrast micrographs for nanocrystalline grain size quantification. We also examine the various factors that influence the HCDF TEM image quality, including the conditions of microscopy (alignment, focus and objective aperture size), the properties of the materials imaged (e.g., atomic number, strain, defects), and the characteristics of the TEM sample itself (e.g., thickness, ion milling artifacts). Sample preparation was found to be critical and an initial thinning by wet etching of the substrate (for thin film samples) or tripod polishing (for bulk samples), followed by low-angle ion milling was found to be the preferred approach for preparing high-quality electron transparent samples for HCDF imaging. PMID:20018512

  19. Spectroscopic characterization of nanocrystalline chromium nitride (CrN).

    PubMed

    Mangamma, G; Sairam, T N; Dash, S; Rajalakshmi, M; Kamruddin, M; Mittal, V K; Narasimhan, S V; Arora, A K; Sundar, C S; Tyagi, A K; Raj, Baldev

    2007-03-01

    Nanocrystalline chromiuim nitride has been synthesised by direct gas phase nitridation of nanocrystalline chromia at 1100 degrees C in ammonia-atmosphere. XRD of this material showed formation of single phase CrN with particle size around 20 nm. AFM studies showed particle distribution along with some soft agglomerated nanostructures. Nanocrystalline Cr2O3 and partially-as well as fully--converted nanocrystalline CrN were also investigated using various spectroscopic techniques like XPS, FT-IR, and Raman for gaining insight into the conversion pathways. Spectroscopic investigations of these materials clearly indicate that complete conversion of CrN occurs by nitriding at 1100 degrees C for 4 hrs. The salient spectroscopic features of these nanocrystalline materials with respect to their microcrystalline counterparts are discussed. PMID:17450861

  20. Scalable production of microbially mediated zinc sulfide nanoparticles and application to functional thin films.

    PubMed

    Moon, Ji-Won; Ivanov, Ilia N; Joshi, Pooran C; Armstrong, Beth L; Wang, Wei; Jung, Hyunsung; Rondinone, Adam J; Jellison, Gerald E; Meyer, Harry M; Jang, Gyoung Gug; Meisner, Roberta A; Duty, Chad E; Phelps, Tommy J

    2014-10-01

    A series of semiconducting zinc sulfide (ZnS) nanoparticles were scalably, reproducibly, controllably and economically synthesized with anaerobic metal-reducing Thermoanaerobacter species. These bacteria reduced partially oxidized sulfur sources to sulfides that extracellularly and thermodynamically incorporated with zinc ions to produce sparingly soluble ZnS nanoparticles with ∼5nm crystallites at yields of ∼5gl(-1)month(-1). A predominant sphalerite formation was facilitated by rapid precipitation kinetics, a low cation/anion ratio and a higher zinc concentration compared to background to produce a naturally occurring hexagonal form at the low temperature, and/or water adsorption in aqueous conditions. The sphalerite ZnS nanoparticles exhibited narrow size distribution, high emission intensity and few native defects. Scale-up and emission tunability using copper doping were confirmed spectroscopically. Surface characterization was determined using Fourier transform infrared and X-ray photoelectron spectroscopies, which confirmed amino acid as proteins and bacterial fermentation end products not only maintaining a nano-dimensional average crystallite size, but also increasing aggregation. The application of ZnS nanoparticle ink to a functional thin film was successfully tested for potential future applications. PMID:24932768

  1. Growth, reaction and nanowire formation of Fe on the ZnS(1 0 0) surface.

    PubMed

    Man, Ka Lun; Pavlovska, Anastassia; Bauer, Ernst; Locatelli, Andrea; Menteş, Tevfik O; Niño, Miguel A; Wong, George K L; Sou, Iam Keong; Altman, Michael S

    2014-08-01

    The growth and reaction of Fe on a ZnS(1 0 0) substrate are studied in situ and with high lateral resolution using low energy electron microscopy (LEEM), micro low energy electron diffraction ( μLEED), x-ray photoemission electron microscopy (XPEEM), microprobe x-ray photoelectron spectroscopy ( μXPS) and x-ray magnetic circular dichroism PEEM (XMCDPEEM) for complementary structural, chemical, and magnetic characterization. Initially, a two-dimensional (Fe, Zn)S reaction layer forms with thickness that depends on growth temperature. Further growth results in the formation of a variety of three-dimensional crystals, most of them strongly elongated in the form of 'nanowires' of two distinct types, labeled as A and B. Type A nanowires are oriented near the ZnS[1 1 0] direction and are composed of Fe. Type B nanowires are oriented predominantly along directions a few degrees off the ZnS[0 0 1] direction and are identified as Greigite (Fe3S4). Both types of nanowires are magnetic with Curie temperatures above 450 °C. The understanding of the reactive growth mechanism in this system that is provided by these investigations may help to develop growth methods for other elemental and transition metal chalcogenide nanostructures on ZnS and possibly on other II-VI semiconductor surfaces. PMID:24934101

  2. Growth, reaction and nanowire formation of Fe on the ZnS(1 0 0) surface

    NASA Astrophysics Data System (ADS)

    Lun Man, Ka; Pavlovska, Anastassia; Bauer, Ernst; Locatelli, Andrea; Menteş, Tevfik O.; Niño, Miguel A.; Wong, George K. L.; Keong Sou, Iam; Altman, Michael S.

    2014-08-01

    The growth and reaction of Fe on a ZnS(1 0 0) substrate are studied in situ and with high lateral resolution using low energy electron microscopy (LEEM), micro low energy electron diffraction ( μLEED), x-ray photoemission electron microscopy (XPEEM), microprobe x-ray photoelectron spectroscopy ( μXPS) and x-ray magnetic circular dichroism PEEM (XMCDPEEM) for complementary structural, chemical, and magnetic characterization. Initially, a two-dimensional (Fe, Zn)S reaction layer forms with thickness that depends on growth temperature. Further growth results in the formation of a variety of three-dimensional crystals, most of them strongly elongated in the form of ‘nanowires’ of two distinct types, labeled as A and B. Type A nanowires are oriented near the ZnS[1 1 0] direction and are composed of Fe. Type B nanowires are oriented predominantly along directions a few degrees off the ZnS[0 0 1] direction and are identified as Greigite (Fe3S4). Both types of nanowires are magnetic with Curie temperatures above 450 °C. The understanding of the reactive growth mechanism in this system that is provided by these investigations may help to develop growth methods for other elemental and transition metal chalcogenide nanostructures on ZnS and possibly on other II-VI semiconductor surfaces.

  3. Simple and greener synthesis of highly photoluminescence Mn2+-doped ZnS quantum dots and its surface passivation mechanism

    NASA Astrophysics Data System (ADS)

    Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong; Hu, Xiaoyun; Li, Xinghua; Fan, Jun

    2014-10-01

    In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn2+-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn2+-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn2+-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn2+-doped ZnS QDs were 3-5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn2+-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

  4. Band Gap Reduction in ZnO and ZnS by Creating Layered ZnO/ZnS Heterostructures.

    PubMed

    Torabi, Amin; Staroverov, Viktor N

    2015-06-01

    Wurtzite-type zinc oxide (ZnO) and zinc sulfide (ZnS) have electronic band gaps that are too large for light-harvesting applications. Using screened hybrid density-functional methods, we show that the band gaps of ZnO and ZnS can be dramatically reduced by creating layered ZnO/ZnS bulk heterostructures in which m contiguous monolayers of ZnO alternate with n contiguous monolayers of ZnS. In particular, the band gap decreases by roughly 40% upon substitution of every tenth monolayer of ZnS with a monolayer of ZnO (and vice versa) and becomes as low as 1.5 eV for heterostructures with m = 3 to m = 9 contiguous monolayers of ZnO alternating with n = 10 - m monolayers of ZnS. The predicted band gaps of layered ZnO/ZnS heterostructures span the entire visible spectrum, which makes these materials suitable for photovoltaic device engineering. PMID:26266505

  5. Advances in amorphous and nanocrystalline materials

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryusuke

    2012-10-01

    A new amorphous alloy has been recently introduced which shows a saturation magnetic induction Bs of 1.64 T which is compared with Bs=1.57 T for a currently available Fe-based amorphous alloy and decreased magnetic losses. Such a combination is rare but can be explained in terms of induced magnetic anisotropy being reduced by the alloy's chemistry and its heat treatment. It has been found that the region of magnetization rotation in the new alloy is considerably narrowed, resulting in reduced exciting power in the magnetic devices utilizing the material. Efforts to increase Bs also have been made for nanocrystalline alloys. For example, a nanocrystalline alloy having a composition of Fe80.5Cu1.5Si4B14 shows Bs exceeding 1.8 T. The iron loss at 50 Hz and at 1.6 T induction in a toroidal core of this material is 0.46 W/kg which is 2/3 that of a grain-oriented silicon steel. At 20 kHz/0.2 T excitation, the iron loss is about 60% of that in an Fe-based amorphous alloy which is widely used in power electronics. Another example is a Fe85Si2B8P4Cu1 nanocrystalline alloy with a Bs of 1.8 T, which is reported to exhibit a magnetic core loss of about 0.2 W/kg at 50 Hz and at 1.5 T induction. This article is a review of these new developments and their impacts on energy efficient magnetic devices.

  6. Polymer and surfactant-templated synthesis of hollow and porous ZnS nano- and microspheres in a spray pyrolysis reactor.

    PubMed

    Sharma, Munish K; Rohani, Parham; Liu, Sha; Kaus, Mark; Swihart, Mark T

    2015-01-13

    Nanostructured zinc sulfide can provide unique photonic, electronic, and catalytic properties that are of interest for applications ranging from bioimaging to photocatalysis. Here we report an easily controllable continuous method to produce porous and hollow ZnS nano- and microspheres. We used poly(ethylene glycol) methyl ether (PEG), polyvinylpyrrolidone (PVP), ethylene oxide/propylene oxide block copolymer (Pluronic F-38), and cetyltrimethylammonium bromide (CTAB) as templates to synthesize ZnS nano- and microspheres with controlled internal morphology in a spray pyrolysis process, starting from an aqueous solution of chemical precursors and templating agents. Spherical particles were produced by droplet-to-particle conversion of droplets. Zinc acetate and thiourea, used here as precursors for ZnS, react in solution to form bis-thiourea zinc acetate (BTZA), which precipitates with the evaporation of solvent. Upon further heating, BTZA decomposes to yield ZnS. During solvent evaporation, PEG and Pluronic precipitate after BTZA, driving formation of a shell of ZnS and a hollow core. In contrast, PVP and CTAB interact strongly with BTZA and ZnS, such that the PVP and ZnS remain intermixed. After evaporation of solvent, the templating agents can be pyrolyzed at high temperature to leave behind porous or hollow ZnS microspheres composed of many much smaller nanocrystals. PMID:25547202

  7. LIGHT-WEIGHT NANOCRYSTALLINE HYDROGEN STORAGE MATERIALS

    SciTech Connect

    S. G. Sankar; B. Zande; R.T. Obermyer; S. Simizu

    2005-11-21

    During Phase I of this SBIR Program, Advanced Materials Corporation has addressed two key issues concerning hydrogen storage: 1. We have conducted preliminary studies on the effect of certain catalysts in modifying the hydrogen absorption characteristics of nanocrystalline magnesium. 2. We have also conducted proof-of-concept design and construction of a prototype instrument that would rapidly screen materials for hydrogen storage employing chemical combinatorial technique in combination with a Pressure-Composition Isotherm Measurement (PCI) instrument. 3. Preliminary results obtained in this study approach are described in this report.

  8. Investigation on Spin Dependent Transport Properties of Core-Shell Structural Fe3O4/ZnS Nanocomposites for Spintronic Application

    PubMed Central

    Liu, Er; Yuan, Honglei; Kou, Zhaoxia; Wu, Xiumei; Xu, Qingyu; Zhai, Ya; Sui, Yunxia; You, Biao; Du, Jun; Zhai, Hongru

    2015-01-01

    The core-shell structural Fe3O4/ZnS nanocomposites with controllable shell thickness were well-fabricated via seed-mediate growth method. Structural and morphological characterizations reveal the direct deposition of crystalline II-VI compound semiconductor ZnS shell layer on Fe3O4 particles. Spin dependent electrical transport is studied on Fe3O4/ZnS nanocomposites with different shell thickness, and a large magnetoresistance (MR) ratio is observed under the magnetic field of 1.0 T at room temperature and 100 K for the compacted sample by Fe3O4/ZnS nanocomposites, which is 50% larger than that of sample with pure Fe3O4 particles, indicating that the enhanced MR is contributed from the spin injection between Fe3O4 and ZnS layer. PMID:26053888

  9. Design and fabrication of multi-layers infrared antireflection coating consisting of ZnS and Ge on ZnS substrate

    NASA Astrophysics Data System (ADS)

    Zarei Moghadam, R.; Ahmadvand, H.; Jannesari, M.

    2016-03-01

    We have designed, fabricated and characterized a multi-layers antireflection coating on multispectral ZnS substrate, suitable for the infrared range of 8-12 μm. The 4-layers coating (Ge/ZnS/Ge/ZnS) with optimized thicknesses was fabricated by PVD technique and studied by FTIR, nanoindentation and AFM. From FTIR spectroscopy it was found that, in the wavelength range of 8-12 μm, the average transmittance of the double-side coated sample increases by about 26% and its maximum reaches about 98%. To improve the mechanical hardness, a bilayer of Y2O3/carbon was deposited on the coating. Nanoindentation test shows that the coating enhances the mechanical properties. The final coating have successfully passed durability and environmental tests.

  10. The pronounced role of impurity phases in the optical properties of Mn catalyzed ZnS nanostructures

    NASA Astrophysics Data System (ADS)

    Nosheen, U.; Shehzad, M. A.; Rehman, S.; Hafeez, M.; Khan, M. A.; Manzoor, U.; Bhatti, A. S.

    2015-09-01

    We report the effect of Mn self-doping in Mn catalyzed ZnS nanostructures grown via vapor liquid solid mechanism, which also resulted in the formation of additional impurity minority phases like ZnO and MnO2. The synthesized ZnS nanostructures were subsequently annealed in the range of 500 °C - 700 °C in an inert environment to remove impurity phases and enhance the incorporation of dopant. Room temperature photoluminescence showed strong defect assisted luminescence. It was observed that green emission due to intrinsic defects of ZnS nanostructures was reduced in magnitude and Mn related orange/red luminescence increased in magnitude in nanostructures annealed at high temperature. The presence of impurity phases led to the observation of surface optical and interface phonon modes as observed in the Raman spectroscopy. Dielectric continuum and phonon confinement models were employed to determine the correlation lengths of the optical phonon modes.

  11. Influence of solvent on the morphology and photocatalytic properties of ZnS decorated CeO{sub 2} nanoparticles

    SciTech Connect

    Raubach, Cristiane W. Polastro, Lisânias; Ferrer, Mateus M.; Perrin, Andre; Perrin, Christiane; Albuquerque, Anderson R.; Buzolin, Prescila G. C.; Sambrano, Julio R.; Santana, Yuri B. V. de; Varela, José A.; Longo, Elson

    2014-06-07

    Herein, we report a theoretical and experimental study on the photocatalytic activity of CeO{sub 2} ZnS, and ZnS decorated CeO{sub 2} nanoparticles prepared by a microwave-assisted solvothermal method. Theoretical models were established to analyze electron transitions primarily at the interface between CeO{sub 2} and ZnS. As observed, the particle morphology strongly influenced the photocatalytic degradation of organic dye Rhodamine B. A model was proposed to rationalize the photocatalytic behavior of the prepared decorated systems taking into account different extrinsic and intrinsic defect distributions, including order-disorder effects at interfacial and intra-facial regions, and vacancy concentration.

  12. Theoretical study of the low-lying electronic states of ZnO and ZnS

    NASA Technical Reports Server (NTRS)

    Bauschlicher, C. W., Jr.; Langhoff, S. R.

    1986-01-01

    Theoretical spectroscopic constants and dipole moments are determined for the 1 Sigma(+), 1,3 Pi, and 3 Sigma(+) states of ZnO and ZnS, using extended Gaussian basis sets and incorporating correlation using both configuration-interaction and coupled pair (CPF) methods. Relativistic corrections (Darwin plus mass velocity), included using first-order perturbation theory, are relatively small. At the CPF level, both ZnO and ZnS have 1 Sigma(+) ground states, with the 3 Pi state lying 209 and 2075/cm higher, respectively. The 3 Sigma(+) state lies about 1.5 eV higher in ZnO and 2.1 eV higher in ZnS. The 1,3 Pi states are relatively close together since the exchange splitting is small with the sigma electron localized on Zn and the pi electron on oxygen (or sulfur).

  13. Nanocrystalline cerium oxide materials for solid fuel cell systems

    DOEpatents

    Brinkman, Kyle S

    2015-05-05

    Disclosed are solid fuel cells, including solid oxide fuel cells and PEM fuel cells that include nanocrystalline cerium oxide materials as a component of the fuel cells. A solid oxide fuel cell can include nanocrystalline cerium oxide as a cathode component and microcrystalline cerium oxide as an electrolyte component, which can prevent mechanical failure and interdiffusion common in other fuel cells. A solid oxide fuel cell can also include nanocrystalline cerium oxide in the anode. A PEM fuel cell can include cerium oxide as a catalyst support in the cathode and optionally also in the anode.

  14. Formation of Surface Corrosion-Resistant Nanocrystalline Structures on Steel

    NASA Astrophysics Data System (ADS)

    Nykyforchyn, Hryhoriy; Kyryliv, Volodymyr; Maksymiv, Olha; Slobodyan, Zvenomyra; Tsyrulnyk, Oleksandr

    2016-02-01

    Engineering materials with nanocrystalline structure could be exploited under simultaneous action of mechanical loading and corrosion environments; therefore, their corrosion resistance is important. Surface nanocrystalline structure was generated on middle carbon steels by severe plastic deformation using the method of mechanical pulse friction treatment. This treatment additionally includes high temperature phase transformation and alloying. Using a complex of the corrosive, electrochemical and physical investigations, it was established that nanocrystalline structures can be characterized by lower or increased corrosion resistance in comparison with the reference material. It is caused by the action of two confronting factors: arising energy level and anticorrosive alloying of the surface layer.

  15. On the hardening and softening of nanocrystalline materials

    SciTech Connect

    Fougere, G.E.; Weertman, J.R. . Dept. of Materials Science and Engineering); Siegel, R.W. . Materials Science Div.)

    1993-04-01

    Nanocrystalline Pd and Cu samples have been thermally treated to determine whether the relation between hardness and grain size depend on the method used to vary the grain sizes. Previous reports indicate that hardening with decreasing grain size resulted from data obtained using individual samples, while softening with decreasing grain size resulted from data from a given sample that had been thermally treated. Hardening and softening regimes were evident for the nanocrystalline cu, and the hardness improvements over the original as-consolidated state were maintained throughout the thermal treatments. This review examines our hardness results for Cu and Pd and those for other nanocrystalline materials.

  16. Formation of Surface Corrosion-Resistant Nanocrystalline Structures on Steel.

    PubMed

    Nykyforchyn, Hryhoriy; Kyryliv, Volodymyr; Maksymiv, Olha; Slobodyan, Zvenomyra; Tsyrulnyk, Oleksandr

    2016-12-01

    Engineering materials with nanocrystalline structure could be exploited under simultaneous action of mechanical loading and corrosion environments; therefore, their corrosion resistance is important. Surface nanocrystalline structure was generated on middle carbon steels by severe plastic deformation using the method of mechanical pulse friction treatment. This treatment additionally includes high temperature phase transformation and alloying. Using a complex of the corrosive, electrochemical and physical investigations, it was established that nanocrystalline structures can be characterized by lower or increased corrosion resistance in comparison with the reference material. It is caused by the action of two confronting factors: arising energy level and anticorrosive alloying of the surface layer. PMID:26831689

  17. Functionalized squaraine donors for nanocrystalline organic photovoltaics.

    PubMed

    Wei, Guodan; Xiao, Xin; Wang, Siyi; Sun, Kai; Bergemann, Kevin J; Thompson, Mark E; Forrest, Stephen R

    2012-01-24

    We study a family of functionalized squaraine (fSQ) donors for absorbing in the near-infrared (NIR) and green spectral regions. The NIR-absorbing materials are the symmetric molecules 2,4-bis[4-(N-phenyl-1-naphthylamino)-2,6-dihydroxyphenyl]squaraine (1-NPSQ), 2,4-bis[4-(N,N-diphenylamino)-2,6 dihydroxyphenyl]squaraine, and 2,4-bis[4-(N,N-dipropylamino)-2,6-dihydroxyphenyl]squaraine. The green light absorbing donors are asymmetric squaraines, namely, 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]squaraine and 2-[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]-4-diphenylamino]squaraine. Substitution of the arylamine groups enhances intermolecular packing, thereby increasing hole transport and the possibility of forming extended nanocrystalline junctions when annealed. Nanocrystalline solar cells based on fSQ and a C(60) acceptor have V(oc) = 1.0 V and fill factors 0.73 ± 0.01. Solar cells incorporating annealed 1-NPSQ films result in a power conversion efficiency of 5.7 ± 0.6% at 1 sun, AM1.5G illumination. PMID:22196154

  18. Photochemical solar cells based on dye-sensitization of nanocrystalline TiO{sub 2}

    SciTech Connect

    Deb, S.K.; Ellingson, R.; Ferrere, S.; Frank, A.J.; Gregg, B.A.; Nozik, A.J.; Park, N.; Schlichthoerl, G.

    1998-09-01

    A photoelectrochemical solar cell that is based on the dye-sensitization of thin nanocrystalline films of TiO{sub 2} (anatase) nanoparticles in contact with a non-aqueous liquid electrolyte is described. The cell, fabricated at NREL, shows a conversion efficiency of {approximately} 9.2% at AM1.5, which approaches the best reported value of 10--11% by Graetzel at EPFL in Lausanne, Switzerland. The femtosecond (fs) pump-probe spectroscopy has been used to time resolve the injection of electrons into the conduction band of nanocrystalline TiO{sub 2} films under ambient conditions following photoexcitation of the adsorbed Ru(II)-complex dye. The measurement indicates an instrument-limited {minus}50 fs upper limit on the electron injection time. The authors also report the sensitization of nanocrystalline TiO{sub 2} by a novel iron-based dye, CIS-[Fe{sup II}(2,2{prime}-bipyridine-4,4,{prime}-dicarboxylic acid){sub 2}(CN){sub 2}], a chromophore with an extremely short-lived, nonemissive excited state. The dye also exhibits a unique band selective sensitization through one of its two absorption bands. The operational principle of the device has been studied through the measurement of electric field distribution within the device structure and studies on the pH dependence of dye-redox potential. The incorporation of WO{sub 3}-based electrochromic layer into this device has led to a novel photoelectrochromic device structure for smart window application.

  19. Biomolecule-assisted synthesis of ZnS nanocorals and open-benzene ring in supercritical carbon dioxide

    SciTech Connect

    Jiao Jiqing; Chen Liuping Liu Xin; Gao Wei; Feng Huajie

    2009-05-06

    The nanostructured ZnS of cubic nanocorals and open-benzene ring has been synthesized by the biomolecule-assisted method in mixture of supercritical carbon dioxide and water as reaction medium at 150 deg. C and 28 MPa. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence spectrum of sample were characterized. The sodium tripoly phosphate and CO{sub 2} as well as high-pressure condition might be the key factors for formation of the particular morphologies and nanostructures of ZnS. This synthesis method could be employed for preparation of other semiconductor nanomaterials.

  20. Energy levels and zero field splitting parameter for Fe{sup 2+} doped in ZnS

    SciTech Connect

    Ivaşcu, Simona

    2013-11-13

    The aim of present paper is to report the results on the modeling of the crystal field parameters of Fe{sup 2+} doped in host matrix ZnS, simulate the energy levels scheme and calculate the zero field splitting parameter D of such system. The crystal field parameters were modeled in the frame of the superposition model of crystal field and the simulation of the energy levels scheme and calculation of the zero field splitting parameters done by diagonalization the Hamiltonian of Fe{sup 2+}:ZnS system. The obtained results were disscused and compared with experimental data. Satisfactory agreement have been obtained.

  1. Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals

    SciTech Connect

    White, C.W.; Budai, J.D.; Meldrum, A.L.

    1997-12-01

    Sequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO{sub 2} and Al{sub 2}O{sub 3} matrices. In SiO{sub 2}, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit a bimodal size distribution. In Al{sub 2}O{sub 3}, nanoparticles are faceted and coherent with the matrix. Initial photoluminescence (PL) results are presented.

  2. Cu-doped CdS and ZnS nanocrystals grown onto thiolated silica-gel

    NASA Astrophysics Data System (ADS)

    Andrade, George Ricardo Santana; Nascimento, Cristiane da Cunha; Xavier, Paulo Adriano; Costa, Silvanio Silverio Lopes; Costa, Luiz Pereira; Gimenez, Iara F.

    2014-11-01

    CdS and ZnS nanocrystals were grown over specific binding sites onto a thiolated silica-gel aiming to favor defect emission processes. This strategy was found to be effective in yielding ZnS nanocrystals with simultaneous blue and blue-green emissions owing to different types of defects. The effects of doping with copper ions have been observed on the photoluminescence properties. The intensity of defect-related emissions from both semiconductor nanocrystals increased with increasing dopant concentration from 0.25% to 1.5% copper, consistent with the presence of sulfur vacancies. Higher dopant concentrations lead to concentration quenching.

  3. Solvothermal synthesis of uniform hexagonal-phase ZnS nanorods using a single-source molecular precursor

    SciTech Connect

    Zhang Yongcai . E-mail: zhangyc@yzu.edu.cn; Wang Guiyun; Hu Xiaoya; Chen Weiwei

    2006-10-12

    Pure and uniform hexagonal-phase ZnS nanorods with quantum confinement effect were synthesized by solvothermal decomposition of an air-stable, easily obtained single-source molecular precursor (zinc diethyldithiocarbamate, Zn-(DDTC){sub 2}) in hydrazine hydrate aqueous solutions at 150-200 deg. C, and characterized by powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and UV-vis absorption spectra. The possible formation mechanism of one-dimensional ZnS nanostructure in the present system was also briefly discussed.

  4. Magnetic and structural properties of Mn-Ga thin films

    NASA Astrophysics Data System (ADS)

    Zhao, Siqian; Suzuki, Takao

    2016-05-01

    A systematic experimental work has been conducted to understand the magnetic properties of Mn-Ga thin films. Multilayer structured thin films of [MnGa 2 nm/Mn x nm]×25 (x = 0.2˜3.5, which corresponds to Mn at%56˜86) were sputter-deposited onto silica glass substrates, followed by annealing in vacuum. It is found that the magnetic properties strongly depend on x. For x = 0.5, the high magnetization values are found, where the nanocrystalline L10 structure is present. The samples with x = 2.0-3.0 exhibit the coercivity Hc higher than 10 kOe at room temperature where the nanocrystalline D022 structures are found to form. The correlation between the magnetic anisotropy constant K and saturation magnetization Ms is also discussed. The nth power dependence of magnetic anisotropy constant K on Ms is found, where the values of n are 7.8 and 1.9 for x = 0.5 and 2.5, respectively. The present result of the power dependence of n equals about 8 for the L10 MnGa suggests that the magnetic anisotropy in a nanocrystalline L10 MnGa phase is much different from the ordered FePt phase. On the other hand, the power dependence of the D022 nanocrystalline phase suggests the two-ion mechanism.

  5. Magnetoresistance measurements of superconducting molybdenum nitride thin films

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Arasu, A. V. Thanikai; Amaladass, E. P.

    2016-05-01

    Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc2(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

  6. Dendrite-Free Nanocrystalline Zinc Electrodeposition from an Ionic Liquid Containing Nickel Triflate for Rechargeable Zn-Based Batteries.

    PubMed

    Liu, Zhen; Cui, Tong; Pulletikurthi, Giridhar; Lahiri, Abhishek; Carstens, Timo; Olschewski, Mark; Endres, Frank

    2016-02-18

    Metallic zinc is a promising anode material for rechargeable Zn-based batteries. However, the dendritic growth of zinc has prevented practical applications. Herein it is demonstrated that dendrite-free zinc deposits with a nanocrystalline structure can be obtained by using nickel triflate as an additive in a zinc triflate containing ionic liquid. The formation of a thin layer of Zn-Ni alloy (η- and γ-phases) on the surface and in the initial stages of deposition along with the formation of an interfacial layer on the electrode strongly affect the nucleation and growth of zinc. A well-defined and uniform nanocrystalline zinc deposit with particle sizes of about 25 nm was obtained in the presence of Ni(II) . Further, it is shown that the nanocrystalline Zn exhibits a high cycling stability even after 50 deposition/stripping cycles. This strategy of introducing an inorganic metal salt in ionic liquid electrolytes can be considered as an efficient way to obtain dendrite-free zinc. PMID:26822484

  7. Preliminary exploration of the interfacial structure of nanocrystalline materials

    SciTech Connect

    Guo, W.Q.; Liu, X.D.; Ding, B.Z.

    1995-12-31

    The present intense interest in exploration on nanostructured materials stems from the studies of interfacial structures of nanocrystalline materials. Up to now, there are two different results of the exploration on interfacial structure of nanocrystalline materials. The first one supposed by Gleiter et al. is a so-called {open_quotes}gas-like{close_quotes} structure. They reported that the interfaces of nanocrystalline materials represent a novel type of solid structure without any long or short range order, corresponding structurally to a {open_quotes}gas-like{close_quotes} solid. This structure can be verified with X-ray diffraction, Mossbauer spectroscopy, positron lifetime spectroscopy and extended X-ray absorption fine structure (EXFAS). The second result obtained by Siegel et al. with high resolution electron microscopy, raman scattering and small angle X-ray and neutron diffraction is that the interfacial structures of nanocrystalline materials are rather similar to those in conventional coarse-grained polycrystals.

  8. Corrosion properties of nanocrystalline cobalt and cobalt-phosphorus alloys

    NASA Astrophysics Data System (ADS)

    Jung, Hundal

    In this thesis, the corrosion properties of electrodeposited nanocrystalline Co and Co-1.1 and 2.1 wt% P alloys (7 to 20 nm grain size) were investigated in a wide range of solution pH by using polarization and electrochemical impedance spectroscopy techniques along with scanning electron microscopy, energy dispersive X-ray spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy analysis. In 0.1 M H2SO 4 and 0.5 M Na2SO4 solutions (pH 1 and 3, respectively), nanocrystalline Co showed higher anodic and cathodic reaction rates and reduced localized corrosion attack compared to coarse grained Co counterparts. An enhanced electrochemical reaction rate of nanocrystalline Co was correlated to a significant increase in grain boundaries and triple junctions. For pure Co, a catalytic mechanism has been suggested to rationalize a more favorable route for their anodic dissolution reaction. An addition of P leads to a significant increase of corrosion resistance of nanocrystalline Co-P due to the increased elemental P concentration on the corroded surface at Eoc following an initial selective dissolution of Co. However, at higher anodic overpotential, the superior corrosion resistance of nanocrystalline Co-P did not last due to the formation of a porous and defective surface film. The excellent corrosion resistance of nanocrystalline Co-P deteriorated from heat treatment at 350°C and 800°C due to higher chemical heterogeneity. In a 3.56% NaCl solution at pH 6.2, nanocrystalline Co-P showed a higher anodic dissolution rate than that of nanocrystalline Co due to a reduced adsorption area of chloride ions. However, the corrosion rate of nanocrystalline Co-P decreased in comparison to nanocrystalline Co due to a much smaller cathodic exchange current density for oxygen reduction on nanocrystalline Co-P. A physical model was elaborated to explain the different response of annealed nanocrystalline Co-P by considering the different adsorption properties

  9. High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

    NASA Technical Reports Server (NTRS)

    Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

    2013-01-01

    A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

  10. Rod-like nanocrystalline B-VO{sub 2}: Hydrothermal synthesis, characterization and electrochemical properties

    SciTech Connect

    Soltane, L.; Sediri, F.

    2014-05-01

    Graphical abstract: - Highlights: • Rod-like nanocrystalline VO{sub 2}(B) was prepared by hydrothermal process. • Reaction time on the morphology has been investigated. • CV has revealed reversible redox behavior with charge–discharge cycling. • Average coulombic efficiency is upper 98%. • Energy-related applications such as cathodes in lithium batteries. - Abstract: Rod-like nanocrystalline VO{sub 2}(B) has been successfully synthesized via a simple hydrothermal process by using V{sub 2}O{sub 5} as vanadium source and 4-butylaniline H{sub 3}C–(CH{sub 2}){sub 3}–(C{sub 6}H{sub 4})–HH{sub 2} as reducing and structure directing agent. The compounds were analyzed through X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and UV–visible spectroscopy. The VO{sub 2}(B) nanorods are up to several micrometers in length and about 80 nm in thickness with a large optical band gap of ∼2.709 eV. Thin films of VO{sub 2}(B) nanorods deposited on ITO substrates were electrochemically characterized by cyclic voltammetry. The voltammograms show reversible redox behavior with charge–discharge cycling process corresponding to the reversible lithium intercalation/deintercalation into the crystal lattice. The average coulombic efficiency to this redox processes is upper 98% during the electrochemistry measurements.

  11. High quality factor nanocrystalline diamond micromechanical resonators limited by thermoelastic damping

    SciTech Connect

    Najar, Hadi; Chan, Mei-Lin; Yang, Hsueh-An; Lin, Liwei; Cahill, David G.; Horsley, David A.

    2014-04-14

    We demonstrate high quality factor thin-film nanocrystalline diamond micromechanical resonators with quality factors limited by thermoelastic damping. Cantilevers, single-anchored and double-anchored double-ended tuning forks, were fabricated from 2.5 μm thick in-situ boron doped nanocrystalline diamond films deposited using hot filament chemical vapor deposition. Thermal conductivity measured by time-domain thermoreflectance resulted in 24 ± 3 W m{sup −1} K{sup −1} for heat transport through the thickness of the diamond film. The resonant frequencies of the fabricated resonators were 46 kHz–8 MHz and showed a maximum measured Q ≈ 86 000 at f{sub n} = 46.849 kHz. The measured Q-factors are shown to be in good agreement with the limit imposed by thermoelastic dissipation calculated using the measured thermal conductivity. The mechanical properties extracted from resonant frequency measurements indicate a Young's elastic modulus of ≈788 GPa, close to that of microcrystalline diamond.

  12. Optimization and Analysis of Nanocrystalline Diamond Coated Micro End Mills

    NASA Astrophysics Data System (ADS)

    Torres, Christopher D.

    This study compares the wear and performance of nanocrystalline diamond (NCD) coated and uncoated tungsten carbide (WC) micro end mills when machining 6061-T6 aluminum. Images of the tool profiles before and after milling are used to track changes in geometry caused by tool wear. Tool performance was characterized by the magnitude of cutting and thrust forces acting on 300 mum diameter end mills and through imaging and analysis of the tool and workpiece surfaces. Thin NCD coatings (<300 nm) allowed for an average of approximately 30 mm of milling before cutting edge fracture. Before edge fracture, the NCD coated tools produced highly uniform, burr free channels. In contrast, significant burring and surface irregularities were evident when using the uncoated tools. Even after cutting edge fracture, the NCD coated tools continued to produce cleaner channels with a lower amount of burring than the uncoated tools but fractured much more severely. However, NCD remaining within the tools' flutes resulted in lower cutting forces due to a reduced effective friction coefficient (friction and adhesion) between the tool surface and the cut chip. Carbon ion implantation (CII), one method to prevent the severe edge failure experienced by the NCD coated end mills, was used as a surface preparation technique to enhance both the cutting edge wear resistance and to increase the nucleation and growth of the diamond coating. Initial milling tests from the carbon ion implanted tools have indicated a drastic improvement in resistance to cutting edge fracture. The implantation of ions into the tool's surface induced compressive stress on the cutting edge, thereby increasing tool resistance. However, the inconsistency of CII has thus far resulted in poorly adhered diamond coatings. Additional stress analysis on the cutting edge has revealed the formation of detrimental bending stresses present during micro milling with an NCD coating. Increasing the cutting edge radius and the coating

  13. Formation of Nano-crystalline Todorokite from Biogenic Mn Oxides

    SciTech Connect

    Feng, X.; Zhu, M; Ginder-Vogel, M; Ni, C; Parikh, S; Sparks, D

    2010-01-01

    Todorokite, as one of three main Mn oxide phases present in oceanic Mn nodules and an active MnO{sub 6} octahedral molecular sieve (OMS), has garnered much interest; however, its formation pathway in natural systems is not fully understood. Todorokite is widely considered to form from layer structured Mn oxides with hexagonal symmetry, such as vernadite ({delta}-MnO{sub 2}), which are generally of biogenic origin. However, this geochemical process has not been documented in the environment or demonstrated in the laboratory, except for precursor phases with triclinic symmetry. Here we report on the formation of a nanoscale, todorokite-like phase from biogenic Mn oxides produced by the freshwater bacterium Pseudomonas putida strain GB-1. At long- and short-range structural scales biogenic Mn oxides were transformed to a todorokite-like phase at atmospheric pressure through refluxing. Topotactic transformation was observed during the transformation. Furthermore, the todorokite-like phases formed via refluxing had thin layers along the c* axis and a lack of c* periodicity, making the basal plane undetectable with X-ray diffraction reflection. The proposed pathway of the todorokite-like phase formation is proposed as: hexagonal biogenic Mn oxide {yields} 10-{angstrom} triclinic phyllomanganate {yields} todorokite. These observations provide evidence supporting the possible bio-related origin of natural todorokites and provide important clues for understanding the transformation of biogenic Mn oxides to other Mn oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano-crystalline OMS materials for use in practical applications.

  14. Formation of nano-crystalline todorokite from biogenic Mn oxides

    NASA Astrophysics Data System (ADS)

    Feng, Xiong Han; Zhu, Mengqiang; Ginder-Vogel, Matthew; Ni, Chaoying; Parikh, Sanjai J.; Sparks, Donald L.

    2010-06-01

    Todorokite, as one of three main Mn oxide phases present in oceanic Mn nodules and an active MnO 6 octahedral molecular sieve (OMS), has garnered much interest; however, its formation pathway in natural systems is not fully understood. Todorokite is widely considered to form from layer structured Mn oxides with hexagonal symmetry, such as vernadite (δ-MnO 2), which are generally of biogenic origin. However, this geochemical process has not been documented in the environment or demonstrated in the laboratory, except for precursor phases with triclinic symmetry. Here we report on the formation of a nanoscale, todorokite-like phase from biogenic Mn oxides produced by the freshwater bacterium Pseudomonas putida strain GB-1. At long- and short-range structural scales biogenic Mn oxides were transformed to a todorokite-like phase at atmospheric pressure through refluxing. Topotactic transformation was observed during the transformation. Furthermore, the todorokite-like phases formed via refluxing had thin layers along the c∗ axis and a lack of c∗ periodicity, making the basal plane undetectable with X-ray diffraction reflection. The proposed pathway of the todorokite-like phase formation is proposed as: hexagonal biogenic Mn oxide → 10-Å triclinic phyllomanganate → todorokite. These observations provide evidence supporting the possible bio-related origin of natural todorokites and provide important clues for understanding the transformation of biogenic Mn oxides to other Mn oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano-crystalline OMS materials for use in practical applications.

  15. Application of nanocrystalline metals in microsystem fabrication

    NASA Astrophysics Data System (ADS)

    Baghbanan, Mohammadreza

    This research addresses the issues of performance variability and reliability concerns frequently encountered with conventional metallic microsystem components (e.g. MEMS) produced by electrodeposition methods such as LIGA. Previous studies have demonstrated that microsystem components produced by conventional electrodeposition approaches show relatively low overall hardness and considerable variations in Young's modulus and hardness throughout the cross-section of the components. In this work, this undesirable property variability has been traced back to microstructural and scaling effects. It has been shown that the microstructure of conventional deposits exhibits grain size gradients resulting from a fine grained to columnar structure transition with increasing component thickness. In addition, the overall component size is often comparable to the relatively large grain size in these deposits. In past efforts, both post-deposition recrystallization annealing and texture control during the electroplating process have been used in efforts to alleviate these concerns, however only with some limited success. In this research, a new approach is used which essentially involves the application of an electrodeposition process that produces fully dense nanostructured deposits throughout the entire cross-section of the component without the transition from fine to large grained columnar structure. The cross-sectional microstructures and mechanical properties (i.e. hardness and Young's modulus) are presented for electrodeposited nickel and cobalt foils with conventional polycrystalline and nanocrystalline structures as well as nanocrystalline nickel plated in molds with non-conductive side-walls prepared by the UV-photolithography molding process. Microstructural characterization was performed on these materials using scanning electron microscopy (SEM), optical microscopy, back scattered electron imaging (BSEI), and transmission electron microscopy (TEM) as well as

  16. Supra- and nanocrystallinities: a new scientific adventure.

    PubMed

    Pileni, M P

    2011-12-21

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices.The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young's modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals.Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process.At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface.Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed. They

  17. Supra- and nanocrystallinities: a new scientific adventure

    NASA Astrophysics Data System (ADS)

    Pileni, M. P.

    2011-12-01

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices. The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young’s modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals. Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process. At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface. Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed

  18. Growth and physical properties of p-Zn x Cd1- x S thin films thermally evaporated on ITO-coated glass substrates

    NASA Astrophysics Data System (ADS)

    Yoon, Eun Jeong; Han, Dong Hun; Lee, Jeoung Ju; Lee, Jong Duk; Kang, Kwang Yong; Lee, Seung Hwan; Shewale, Prashant Shivaji

    2015-01-01

    Zn x Cd1- x S ( x = 0.15, 0.44, 0.62, 0.80, and 0.95) thin films of about 340 nm in thickness were deposited on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation of high-purity ZnS and CdS mixed tablets in high vacuum. X-ray diffraction spectra showed that the Zn x Cd1- x S thin films were preferentially grown along the (111) orientation. The Zn x Cd1- x S crystal structure was a mixture structure of the ZnS and the CdS cubic zincblende structures with lattice constants a = 5.670 Å to a = 5.734 Å for CdS and a = 5.437 Å for ZnS. The ( αh ν)2 vs. h ν plots for the Zn x Cd1- x S thin films showed that all samples had direct transition band gaps. The energy band gaps of the Zn x Cd1- x S thin films increased monotonically from 2.45 eV for x = 0.15 to 3.37 eV for x = 0.95. The dynamical behavior of the charge carriers in the Zn x Cd1- x S thin films was investigated by using the photoinduced discharge characteristics (PIDC) technique.

  19. Luminescence and related properties of nanocrystalline porous silicon

    NASA Astrophysics Data System (ADS)

    Koshida, N.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.

  20. Recent developments in highly durable protective/antireflection coatings for Ge and ZnS substrates

    NASA Astrophysics Data System (ADS)

    Hasan, Wasim; Propst, Steven H.

    1994-11-01

    Antireflection coated ZnS and Ge substrates erode under severe operational environmental conditions. High velocity water drop impact and high velocity sand particle impact are primarily military concerns that originated with the advent of faster aircraft. High speed flight through rain and sand storms seriously erodes forward facing components such as infrared transmitting windows and/or domes. This erosion of windows and/or domes causes reduction in transmission, resulting in the reduction of detection and recognition sensitivity of the electro-optical sensor. A single film of one quarterwave thick hard-carbon coating has been used on germanium to increase optical transmission (reducing Fresnel's reflection losses on Ge surface) as well as to reduce rain and sand impact damage to some extent, at a lower speed. At high speed, the damage becomes more severe, resulting in unacceptable large transmission losses. Recently, new hard carbon coatings have been developed for Ge which have substantially increased the damage threshold of the coated substrates. The rain erosion test was performed at Wright-Patterson AFB facility in Dayton, Ohio, and the sand tests were performed at PDA Engineering in Santa Ana, California. In addition, a multilayer AR coating utilizing hard carbon film as one of the low index films has also been developed at Hughes for ZnS substrates. The optical properties, rain erosion, sand erosion, and sand abrasion test results of these coatings are also presented in this paper.