Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2017-11-01

Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Sobri, M.; Shuhaimi, A.; Hakim, K. M.; Ganesh, V.; Mamat, M. H.; Mazwan, M.; Najwa, S.; Ameera, N.; Yusnizam, Y.; Rusop, M.

2014-06-01

Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using nickel and ITO (In-Sn, 90-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystallinity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10-5 Ω cm to 1.09 × 10-6 Ω cm upon increasing annealing temperature.

Tin-polyimide and indium-polyimide thin-film composites as soft X-ray bandpass filters

NASA Technical Reports Server (NTRS)

Powell, Stephen F.; Allen, Maxwell J.; Willis, Thomas D.

1993-01-01

A tin-polyimide and an indium-polyimide soft X-ray bandpass filter were fabricated with thicknesses of 1400 and 1750 A for the metal and polyimide components, respectively. The transmission of each filter was measured at the Stanford Synchrotron Radiation Laboratory. The transmission of the tin-polyimide filter was found to be about 40 percent for radiation with wavelengths between 60 and 80 A. The transmission of the indium-polyimide filter was greater than 40 percent between 70 and 90 A. The indium was about 5 percent more transmissive than the tin and attained a maximum transmission of about 48 percent at 76 A. Such filters have potential applications to soft X-ray telescopes that operate in this region. They might also be of interest to investigators who work with X-ray microscopes that image live biological specimens in the 23-44-A water window.

Generation of laser-induced periodic surface structures in indium-tin-oxide thin films and two-photon lithography of ma-N photoresist by sub-15 femtosecond laser microscopy for liquid crystal cell application

NASA Astrophysics Data System (ADS)

Klötzer, Madlen; Afshar, Maziar; Feili, Dara; Seidel, Helmut; König, Karsten; Straub, Martin

2015-03-01

Indium-tin-oxide (ITO) is a widely used electrode material for liquid crystal cell applications because of its transparency in the visible spectral range and its high electrical conductivity. Important examples of applications are displays and optical phase modulators. We report on subwavelength periodic structuring and precise laser cutting of 150 nm thick indium-tin-oxide films on glass substrates, which were deposited by magnetron reactive DC-sputtering from an indiumtin target in a low-pressure oxygen atmosphere. In order to obtain nanostructured electrodes laser-induced periodic surface structures with a period of approximately 100 nm were generated using tightly focused high-repetition rate sub-15 femtosecond pulsed Ti:sapphire laser light, which was scanned across the sample by galvanometric mirrors. Three-dimensional spacers were produced by multiphoton photopolymerization in ma-N 2410 negative-tone photoresist spin-coated on top of the ITO layers. The nanostructured electrodes were aligned in parallel to set up an electrically switchable nematic liquid crystal cell.

On Defect Cluster Aggregation and Non-Reducibilty in Tin-Doped Indium Oxide

NASA Astrophysics Data System (ADS)

Warschkow, Oliver; Ellis, Donald E.; Gonzalez, Gabriela; Mason, Thomas O.

2003-03-01

The conductivity of tin-doped indium oxide (ITO), a transparent conductor, is critically dependent on the amount of tin-doping and oxygen partial pressure during preparation and annealing. Frank and Kostlin (Appl. Phys. A 27 (1982) 197-206) rationalized the carrier concentration dependence by postulating the formation of two types of neutral defect clusters at medium tin-doping levels: "Reducible" and "non-reducible" defect clusters; so named to indicate their ability to create carriers under reduction. According to Frank and Kostlin, both are composed of a single oxygen interstitial and two tin atoms substituting for indium, positioned in non-nearest and nearest coordination, respectively. This present work, seeking to distinguish reducible and non-reducible clusters by use of an atomistic model, finds only a weak correlation of oxygen interstitial binding energies with the relative positioning of dopants. Instead, the number of tin-dopants in the vicinity of the interstitial has a much larger effect on how strongly it is bound, a simple consequence of Coulomb interactions. We postulate that oxygen interstitials become non-reducible when clustered with three or more Sn_In. This occurs at higher doping levels as reducible clusters aggregate and share tin atoms. A simple probabilistic model, estimating the average number of clusters so aggregated, provides a qualitatively correct description of the carrier density in reduced ITO as a function of Sn doping level.

Two-dimensional tin selenide nanostructures for flexible all-solid-state supercapacitors.

PubMed

Zhang, Chunli; Yin, Huanhuan; Han, Min; Dai, Zhihui; Pang, Huan; Zheng, Yulin; Lan, Ya-Qian; Bao, Jianchun; Zhu, Jianmin

2014-04-22

Due to their unique electronic and optoelectronic properties, tin selenide nanostructures show great promise for applications in energy storage and photovoltaic devices. Despite the great progress that has been achieved, the phase-controlled synthesis of two-dimensional (2D) tin selenide nanostructures remains a challenge, and their use in supercapacitors has not been explored. In this paper, 2D tin selenide nanostructures, including pure SnSe2 nanodisks (NDs), mixed-phase SnSe-SnSe2 NDs, and pure SnSe nanosheets (NSs), have been synthesized by reacting SnCl2 and trioctylphosphine (TOP)-Se with borane-tert-butylamine complex (BTBC) and 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone. Utilizing the interplay of TOP and BTBC and changing only the amount of BTBC, the phase-controlled synthesis of 2D tin selenide nanostructures is realized for the first time. Phase-dependent pseudocapacitive behavior is observed for the resulting 2D nanostructures. The specific capacitances of pure SnSe2 NDs (168 F g(-1)) and SnSe NSs (228 F g(-1)) are much higher than those of other reported materials (e.g., graphene-Mn3O4 nanorods and TiN mesoporous spheres); thus, these tin selenide materials were used to fabricate flexible, all-solid-state supercapacitors. Devices fabricated with these two tin selenide materials exhibited high areal capacitances, good cycling stabilities, excellent flexibilities, and desirable mechanical stabilities, which were comparable to or better than those reported recently for other solid-state devices based on graphene and 3D GeSe2 nanostructures. Additionally, the rate capability of the SnSe2 NDs device was much better than that of the SnSe NS device, indicating that SnSe2 NDs are promising active materials for use in high-performance, flexible, all-solid-state supercapacitors.

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

NASA Technical Reports Server (NTRS)

Dubow, J. B.; Sites, J. R.; Burk, D. E.

1976-01-01

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

THz conductivities of indium-tin-oxide nanowhiskers as a graded-refractive-index structure.

PubMed

Yang, Chan-Shan; Chang, Chia-Hua; Lin, Mao-Hsiang; Yu, Peichen; Wada, Osamu; Pan, Ci-Ling

2012-07-02

Indium-tin-oxide (ITO) nanowhiskers with attractive electrical and anti-reflection properties were prepared by the glancing-angle electron-beam evaporation technique. Structural and crystalline properties of such nanostructures were examined by scanning transmission electron microscopy and X-ray diffraction. Their frequency-dependent complex conductivities, refractive indices and absorption coefficients have been characterized with terahertz time-domain spectroscopy (THz-TDS), in which the nanowhiskers were considered as a graded-refractive-index (GRIN) structure instead of the usual thin film model. The electrical properties of ITO GRIN structures are analyzed and fitted well with Drude-Smith model in the 0.2~2.0 THz band. Our results indicate that the ITO nanowhiskers and its bottom layer atop the substrate exhibit longer carrier scattering times than ITO thin films. This signifies that ITO nanowhiskers have an excellent crystallinity with large grain size, consistent with X-ray data. Besides, we show a strong backscattering effect and fully carrier localization in the ITO nanowhiskers.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Dual-scale rough multifunctional superhydrophobic ITO coatings prepared by air annealing of sputtered indium-tin alloy thin films

NASA Astrophysics Data System (ADS)

Gupta, Nitant; Sasikala, S.; Mahadik, D. B.; Rao, A. V.; Barshilia, Harish C.

2012-10-01

A novel method to fabricate multifunctional indium tin oxide (ITO) coatings is discussed. Superhydrophobic ITO coatings are fabricated by radio frequency balanced magnetron sputter deposition of indium-tin alloy on glass substrates followed by complete oxidation of the samples in air. The chemical nature and structure of the coatings are verified by X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. Field emission scanning electron microscopic studies of the coatings display rod-like and blob-like microstructures, together with fractal-like nanostructures infused on top. Microscale roughness of the ITO coatings is measured by three-dimensional profilometry and is found to be in the range of 0.1-3 μm. Thus the presence of micro- and nano- sized structures result in dual-scale roughness. The variation in the contact angle with the deposition time is studied using a contact angle goniometer. High water contact angles (>160°) and low contact angle hysteresis (5°) are obtained at an optimum microscale roughness. The ITO coatings also exhibit other functional properties, such as low sheet resistance and semi-transparent behaviour in the visible region. The loss in the transparency of the ITO coatings is attributed to the presence of higher scale of roughness. The photoluminescence measurements show large photoemission in the visible region. It is expected that further improvements in the multifunctional properties of transparent conducting oxides will open new frontiers in designing novel materials with exotic properties.

Reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel and tin**

PubMed Central

Assael, Marc J.; Chatzimichailidis, Arsenios; Antoniadis, Konstantinos D.; Wakeham, William A.; Huber, Marcia L.; Fukuyama, Hiroyuki

2017-01-01

The available experimental data for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin has been critically examined with the intention of establishing thermal conductivity reference correlations. All experimental data have been categorized into primary and secondary data according to the quality of measurement specified by a series of criteria. The proposed standard reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin are respectively characterized by uncertainties of 9.8, 15.9, 9.7, 13.7, 16.9, 7.7, and 12.6% at the 95% confidence level. PMID:29353915

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

DOE PAGES

Leng, X.; Bozovic, I.; Bollinger, A. T.

2016-08-10

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

Indium tin oxide nanopillar electrodes in polymer/fullerene solar cells.

PubMed

Rider, David A; Tucker, Ryan T; Worfolk, Brian J; Krause, Kathleen M; Lalany, Abeed; Brett, Michael J; Buriak, Jillian M; Harris, Kenneth D

2011-02-25

Using high surface area nanostructured electrodes in organic photovoltaic (OPV) devices is a route to enhanced power conversion efficiency. In this paper, indium tin oxide (ITO) and hybrid ITO/SiO(2) nanopillars are employed as three-dimensional high surface area transparent electrodes in OPVs. The nanopillar arrays are fabricated via glancing angle deposition (GLAD) and electrochemically modified with nanofibrous PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(p-styrenesulfonate)). The structures are found to have increased surface area as characterized by porosimetry. When applied as anodes in polymer/fullerene OPVs (architecture: commercial ITO/GLAD ITO/PEDOT:PSS/P3HT:PCBM/Al, where P3HT is 2,5-diyl-poly(3-hexylthiophene) and PCBM is [6,6]-phenyl-C(61)-butyric acid methyl ester), the air-processed solar cells incorporating high surface area, PEDOT:PSS-modified ITO nanoelectrode arrays operate with improved performance relative to devices processed identically on unstructured, commercial ITO substrates. The resulting power conversion efficiency is 2.2% which is a third greater than for devices prepared on commercial ITO. To further refine the structure, insulating SiO(2) caps are added above the GLAD ITO nanopillars to produce a hybrid ITO/SiO(2) nanoelectrode. OPV devices based on this system show reduced electrical shorting and series resistance, and as a consequence, a further improved power conversion efficiency of 2.5% is recorded.

Study of annealing time on sol-gel indium tin oxide films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

De, A.; Biswas, P.K.; Manara, J.

2007-07-15

Indium and tin salt-based precursors maintaining In:Sn atomic ratio as 90:10 were utilized for the development of sol-gel dip coated indium tin oxide films (ITO) on SiO{sub 2} coated ({approx} 200 nm thickness) soda lime silica glass substrate. The gel films were initially cured in air at {approx} 450 deg. C to obtain oxide films of physical thickness {approx} 250 nm. These were then annealed in 95% Ar-5% H{sub 2} atmosphere at {approx} 500 deg. C. The annealing time was varied from 0.5 h to 5 h. Variation of annealing time did not show any considerable change of transmittance inmore » the visible region. Thermal emissivity ({epsilon} {sub d}, 0.67-0.79) of the films were evaluated from their hemispherical spectral reflectance. These passed through a minima with increasing annealing time as the reflectivity of the films in the mid-IR passed through a maxima. The microstructure of the films revealed systematic growth of the ITO grains. XRD and XPS studies revealed the presence of both In and Sn metals in addition to the metal oxides. The energy dispersive X-ray (EDX) analysis showed little lowering of tin content in the films with increasing annealing time.« less

Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide

NASA Astrophysics Data System (ADS)

Lee, Younjoo; Lee, Hyunbok; Park, Soohyung; Yi, Yeonjin

2012-12-01

We investigated the interfacial electronic structures of Al/adenine/indium-tin-oxide (ITO) and Al/thymine/ITO using in situ ultraviolet and x-ray photoemission spectroscopy and density functional theory calculations. Adenine shows both an interface dipole and level bending, whereas thymine shows only an interface dipole in contact with ITO. In addition, thymine possesses a larger ionization energy than adenine. These are understood with delocalized π states confirmed with theoretical calculations. For the interface between nucleobases and Al, both nucleobases show a prominent reduction of the electron injection barrier from Al to each base in accordance with a downward level shift.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Optoelectric biosensor using indium-tin-oxide electrodes.

PubMed

Choi, Chang Kyoung; Kihm, Kenneth D; English, Anthony E

2007-06-01

The use of an optically thin indium-tin-oxide (ITO) electrode is presented for an optoelectric biosensor simultaneously recording optical images and microimpedance to examine time-dependent cellular growth. The transmittance of a 100 nm thick ITO electrode layer is approximately the same as the transmittance of a clean glass substrate, whereas the industry-standard Au(47.5 nm)/Ti(2.5 nm) electrode layer drops the transmittance to less than 10% of that of the glass substrate. The simultaneous optoelectric measurements permit determining the correlation of the cell-covered area increase with the microimpedance increase, and the example results obtained for live porcine pulmonary artery endothelial cells delineate the quantitative and comprehensive nature of cellular attachment and spreading to the substrate, which has not been clearly perceived before.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

NASA Astrophysics Data System (ADS)

Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

2014-08-01

Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

Wrinkled substrate and Indium Tin Oxide-free transparent electrode making organic solar cells thinner in active layer

NASA Astrophysics Data System (ADS)

Liu, Kong; Lu, Shudi; Yue, Shizhong; Ren, Kuankuan; Azam, Muhammad; Tan, Furui; Wang, Zhijie; Qu, Shengchun; Wang, Zhanguo

2016-11-01

To enable organic solar cells with a competent charge transport efficiency, reducing the thickness of active layer without sacrificing light absorption efficiency turns out to be of high feasibility. Herein, organic solar cells on wrinkled metal surface are designed. The purposely wrinkled Al/Au film with a smooth surface provides a unique scaffold for constructing thin organic photovoltaic devices by avoiding pinholes and defects around sharp edges in conventional nanostructures. The corresponding surface light trapping effect enables the thin active layer (PTB7-Th:PC71BM) with a high absorption efficiency. With the innovative MoO3/Ag/ZnS film as the top transparent electrode, the resulting Indium Tin Oxide-free wrinkled devices show a power conversion efficiency as 7.57% (50 nm active layer), higher than the planner counterparts. Thus, this paper provides a new methodology to improve the performance of organic solar cells by balancing the mutual restraint factors to a high level.

Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

NASA Astrophysics Data System (ADS)

Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

2017-07-01

Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

Surface smoothing of indium tin oxide film by laser-induced photochemical etching

NASA Astrophysics Data System (ADS)

Kang, JoonHyun; Kim, Young-Hwan; Kwon, Seok Joon; Park, Joon-Suh; Park, Kyoung Wan; Park, Jae-Gwan; Han, Il Ki

2017-12-01

Surface smoothing of indium tin oxide (ITO) film by laser irradiation was demonstrated. The ITO surface was etched by choline radicals, which were activated by laser irradiation at a wavelength of 532 nm. The RMS surface roughness was improved from 5.6 to 4.6 nm after 10 min of laser irradiation. We also showed the changes in the surface morphology of the ITO film with various irradiation powers and times.

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

2012-01-01

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

2016-08-01

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

Study of indium tin oxide films exposed to atomic axygen

NASA Technical Reports Server (NTRS)

Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

1989-01-01

A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

Thermoelectric Properties and Thermal Tolerance of Indium Tin Oxide Nanowires.

PubMed

Hernandez, Jose A; Carpena Nunez, Jennifer; Fonseca, Luis F; Pettes, Michael Thompson; Yacaman, Miguel Jose; Benitez, Alfredo

2018-06-14

Single-crystalline indium tin oxide (ITO) nanowires were grown via a vapor-liquid-solid (VLS) method, with thermal tolerance up to ~1300°C. We report the electric and thermoelectric properties of the ITO nanowires before and after heat treatments and draw conclusions about their applicability as thermoelectric building blocks in nanodevices that can operate in high temperature conditions. The Seebeck coefficient and the thermal and electrical conductivities were measured in each individual nanowire by means of specialized micro-bridge thermometry devices. Measured data was analyzed and explained in terms of changes in charge carrier density, impurities and vacancies due to the thermal treatments. © 2018 IOP Publishing Ltd.

Fabrication and characterization of lithographically patterned and optically transparent anodic aluminum Oxide (AAO) nanostructure thin film.

PubMed

He, Yuan; Li, Xiang; Que, Long

2012-10-01

Optically transparent anodic aluminum oxide (AAO) nanostructure thin film has been successfully fabricated from lithographically patterned aluminum on indium tin oxide (ITO) glass substrates for the first time, indicating the feasibility to integrate the AAO nanostructures with microdevices or microfluidics for a variety of applications. Both one-step and two-step anodization processes using sulfuric acid and oxalic acid have been utilized for fabricating the AAO nanostructure thin film. The optical properties of the fabricated AAO nanostructure thin film have been evaluated and analyzed.

Thin-film fractal nanostructures formed by electrical breakdown

NASA Astrophysics Data System (ADS)

Tadtaev, P. O.; Bobkov, A. A.; Borodzyulya, V. F.; Lamkin, I. A.; Mihailov, I. I.; Moshnikov, V. A.; Permyakov, N. V.; Solomonov, A. V.; Sudar, N. T.; Tarasov, S. A.

2017-11-01

This is a study of the fractal micro- and nanostructures formation caused by the electrical breakdown of the indium-tin oxide (ITO) covered with various organic coatings. The samples were created by covering a glass substrate with a 1 to 10um-thick layer of indium-tin oxide. Some of the samples were then coated with organic layers of polycarbonate, poly(methyl methacrylate) and others. In order to create high local electrical field densities a special setup based on a eutectic GaIn liquid needle was created: it allowed for the contact area of 60um in diameter and application of the step voltage swept from 20 to 300 volts. The setup also contained a spectrometer for measuring the spectra of the breakdown optical effects. The results showed that the destruction of ITO led to the formation of the spiral fractal nanostructures, parameters of which depended on the thickness of the layer and the presence of the organic cover. In case of the latter, polymer coating was shown to visualize and zoom the topography of the nanostructures which might be used as a method of “polymer photography” for such fractal formations. The analysis of the spectra showed their dependence on the parameters of the structures which proves the possibility of conducting optical diagnostics of the created structures.

Effects on Organic Photovoltaics Using Femtosecond-Laser-Treated Indium Tin Oxides.

PubMed

Chen, Mei-Hsin; Tseng, Ya-Hsin; Chao, Yi-Ping; Tseng, Sheng-Yang; Lin, Zong-Rong; Chu, Hui-Hsin; Chang, Jan-Kai; Luo, Chih-Wei

2016-09-28

The effects of femtosecond-laser-induced periodic surface structures (LIPSS) on an indium tin oxide (ITO) surface applied to an organic photovoltaic (OPV) system were investigated. The modifications of ITO induced by LIPPS in OPV devices result in more than 14% increase in power conversion efficiency (PCE) and short-circuit current density relative to those of the standard device. The basic mechanisms for the enhanced short-circuit current density are attributed to better light harvesting, increased scattering effects, and more efficient charge collection between the ITO and photoactive layers. Results show that higher PCEs would be achieved by laser-pulse-treated electrodes.

Electrodeposited nanostructured MnO{sub 2} for non-enzymatic hydrogen peroxide sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, B., E-mail: barnamala.saha@gmail.com; Jana, S. K.; Banerjee, S.

2015-06-24

Electrodeposited MnO{sub 2} nanostructure was synthesized on indium tin oxide coated glass electrode by cyclic voltammetry. The as obtained samples were subsequently characterized by atomic force microscopy and their electro-catalytic response towards hydrogen peroxide in alkaline medium of 0.1M NaOH was studied using cyclic voltammetry and amperometry.

Optically active polyurethane@indium tin oxide nanocomposite: Preparation, characterization and study of infrared emissivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yong; Zhou, Yuming, E-mail: ymzhou@seu.edu.cn; Ge, Jianhua

Highlights: ► Silane coupling agent of KH550 was used to connect the ITO and polyurethanes. ► Infrared emissivity values of the hybrids were compared and analyzed. ► Interfacial synergistic action and orderly secondary structure were the key factors. -- Abstract: Optically active polyurethane@indium tin oxide and racemic polyurethane@indium tin oxide nanocomposites (LPU@ITO and RPU@ITO) were prepared by grafting the organics onto the surfaces of modified ITO nanoparticles. LPU@ITO and RPU@ITO composites based on the chiral and racemic tyrosine were characterized by FT-IR, UV–vis spectroscopy, X-ray diffraction (XRD), SEM, TEM, and thermogravimetric analysis (TGA), and the infrared emissivity values (8–14 μm)more » were investigated in addition. The results indicated that the polyurethanes had been successfully grafted onto the surfaces of ITO without destroying the crystalline structure. Both composites possessed the lower infrared emissivity values than the bare ITO nanoparticles, which indicated that the interfacial interaction had great effect on the infrared emissivity. Furthermore, LPU@ITO based on the optically active polyurethane had the virtue of regular secondary structure and more interfacial synergistic actions between organics and inorganics, thus it exhibited lower infrared emissivity value than RPU@ITO based on the racemic polyurethane.« less

Determination of the solubility of tin indium oxide using in situ and ex x-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gonzalez, G. B.; Mason, T. O.; Okasinski, J. S.

A novel approach to determine the thermodynamic solubility of tin in indium oxide via the exsolution from tin overdoped nano-ITO powders is presented. High-energy, in situ and ex situ synchrotron X-ray diffraction was utilized to study the solubility limit at temperatures ranging from 900 C to 1375 C. The tin exsolution from overdoped nanopowders and the formation of In{sub 4}Sn{sub 3}O{sub 12} were observed in situ during the first 4-48 h of high-temperature treatment. Samples annealed between 900 C and 1175 C were also studied ex situ with heat treatments for up to 2060 h. Structural results obtained from Rietveldmore » analysis include compositional phase analysis, atomic positions, and lattice parameters. The tin solubility in In{sub 2}O{sub 3} was determined using the phase analysis compositions from X-ray diffraction and the elemental compositions obtained from X-ray fluorescence. Experimental complications that can lead to incorrect tin solubility values in the literature are discussed.« less

Gigahertz acoustic vibrations of elastically anisotropic Indium–tin-oxide nanorod arrays [Gigahertz modulation of the full visible spectrum via acoustic vibrations of elastically anisotropic Indium-tin-oxide nanorod arrays

DOE PAGES

Guo, Peijun; Schaller, Richard D.; Ocola, Leonidas E.; ...

2016-08-15

Active control of light is important for photonic integrated circuits, optical switches,. and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and Small footprint Instead of using noble metals, here we introduce indium tin-oxide nanorod arrays (ITO-NRAs) as the operating media;and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm), with similar to 20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10%more » is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures Of the vibrational modes with finite-element simulations, we,further determine the anisotropic elastic constants for single-crystalline ITO, which are not known-for the bulk phase. Furthermore, this technique to determine elastic constants using Coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.« less

Gigahertz acoustic vibrations of elastically anisotropic Indium–tin-oxide nanorod arrays [Gigahertz modulation of the full visible spectrum via acoustic vibrations of elastically anisotropic Indium-tin-oxide nanorod arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Peijun; Schaller, Richard D.; Ocola, Leonidas E.

Active control of light is important for photonic integrated circuits, optical switches,. and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and Small footprint Instead of using noble metals, here we introduce indium tin-oxide nanorod arrays (ITO-NRAs) as the operating media;and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm), with similar to 20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10%more » is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures Of the vibrational modes with finite-element simulations, we,further determine the anisotropic elastic constants for single-crystalline ITO, which are not known-for the bulk phase. Furthermore, this technique to determine elastic constants using Coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.« less

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

NASA Astrophysics Data System (ADS)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

Large-Scale Synthesis of Tin-Doped Indium Oxide Nanofibers Using Water as Solvent

NASA Astrophysics Data System (ADS)

Altecor, Aleksey; Mao, Yuanbing; Lozano, Karen

2012-09-01

Here we report the successful fabrication of tin-doped indium oxide (ITO) nanofibers using a scalable Forcespinning™ method. In this environmentally-friendly process, water was used as the only solvent for both Polyvinylpyrrolidone (PVP, the sacrificial polymer) and the metal chloride precursor salts. The obtained precursor nanofiber mats were calcinated at temperatures ranging from 500-800°C to produce ITO nanofibers with diameters as small as 400 nm. The developed ITO nanofibers were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction analysis.

Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study

NASA Astrophysics Data System (ADS)

Nath Tripathi, Madhvendra; Saeed Bahramy, Mohammad; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-10-01

The manganese doped indium tin oxide (ITO) has integrated magnetics, electronics, and optical properties for next generation multifunctional devices. Our first-principles density functional theory (DFT) calculations show that the manganese atom replaces b-site indium atom, located at the second coordination shell of the interstitial oxygen in ITO. It is also found that both anti-ferromagnetic and ferromagnetic behaviors are realizable. The calculated magnetic moment of 3.95μB/Mn as well as the high transmittance of ˜80% for a 150 nm thin film of Mn doped ITO is in good agreement with the experimental data. The inclusion of on-site Coulomb repulsion corrections via DFT + U methods turns out to improve the optical behavior of the system. The optical behaviors of this system reveal its suitability for the magneto-opto-electronic applications.

Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

NASA Astrophysics Data System (ADS)

Georgieva, V.; Aleksandrova, M.; Stefanov, P.; Grechnikov, A.; Gadjanova, V.; Dilova, T.; Angelov, Ts

2014-12-01

A study of NO2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO2 concentrations. The QCM-ITO system becomes sensitive at NO2 concentration >= 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO2 concentration. When the NO2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO2 in the air at room temperature.

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Preparation and electrical properties of electrospun tin-doped indium oxide nanowires

NASA Astrophysics Data System (ADS)

Lin, Dandan; Wu, Hui; Zhang, Rui; Pan, Wei

2007-11-01

Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinning process. The Sn doping mechanism and microstructure have been characterized by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices for I-V measurement and field-effect transistors (FETs) were assembled using ITO nanowires with top contact configurations. The effect of Sn doping on the electrical conductivity was significant in that it enhanced the conductance by over 107 times, up to ~1 S cm-1 for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETs were operated in the depletion mode with an electron mobility of up to 0.45 cm2 V-1 s-1 and an on/off ratio of 103.

Superior local conductivity in self-organized nanodots on indium-tin-oxide films induced by femtosecond laser pulses.

PubMed

Wang, Chih; Wang, Hsuan-I; Tang, Wei-Tsung; Luo, Chih-Wei; Kobayashi, Takayoshi; Leu, Jihperng

2011-11-21

Large-area surface ripple structures of indium-tin-oxide films, composed of self-organized nanodots, were induced by femtosecond laser pulses, without scanning. The multi-periodic spacing (~800 nm, ~400 nm and ~200 nm) was observed in the laser-induced ripple of ITO films. The local conductivity of ITO films is significantly higher, by approximately 30 times, than that of the as-deposited ITO films, due to the formation of these nanodots. Such a significant change can be ascribed to the formation of indium metal-like clusters, which appear as budges of ~5 nm height, due to an effective volume increase after breaking the In-O to form In-In bonding. © 2011 Optical Society of America

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

NASA Technical Reports Server (NTRS)

Blackburn, L. B.; Starke, E. A., Jr.

1989-01-01

Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

Self-catalytic crystal growth, formation mechanism, and optical properties of indium tin oxide nanostructures

NASA Astrophysics Data System (ADS)

Liang, Yuan-Chang; Zhong, Hua

2013-08-01

In-Sn-O nanostructures with rectangular cross-sectional rod-like, sword-like, and bowling pin-like morphologies were successfully synthesized through self-catalytic growth. Mixed metallic In and Sn powders were used as source materials, and no catalyst layer was pre-coated on the substrates. The distance between the substrate and the source materials affected the size of the Sn-rich alloy particles during crystal growth in a quartz tube. This caused In-Sn-O nanostructures with various morphologies to form. An X-ray photoelectron spectroscope and a transmittance electron microscope with an energy-dispersive X-ray spectrometer were used to investigate the elemental binding states and compositions of the as-synthesized nanostructures. The Sn doping and oxygen vacancies in the In2O3 crystals corresponded to the blue-green and yellow-orange emission bands of the nanostructures, respectively.

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp

2015-11-15

Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +}more » ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.« less

Heteroepitaxial growth of tin-doped indium oxide films on single crystalline yttria stabilized zirconia substrates

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Yagami, Teruyuki; Takaki, Satoru; Shigesato, Yuzo

1994-05-01

Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100]∥YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.

Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

NASA Astrophysics Data System (ADS)

Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

2014-08-01

We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

Electron microscopic and ion scattering studies of heteroepitaxial tin-doped indium oxide films

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Shigesato, Yuzo; Takaki, Satoru; Hayashi, Yasuo; Sasaki, Mikio; Haynes, Tony E.

1994-08-01

The microstructure of heteroepitaxial tin-doped indium oxide (ITO) films were studied in detail. The surface morphology of the heteroepitaxial ITO film consisted of square-shaped, in-plane oriented subgrains (˜300 Å) in contrast to that of the polycrystalline film (characteristic grain-subgrain structure). The subgrain boundaries were predominantly formed along the {110} planes in the ITO film and dislocations were observed primarily along the subgrain boundaries. Ion channeling measurements showed the dislocation density of this film to be approximately 3×1010/cm2, and the angular distribution of the ion channeling yield showed that the subgrains are aligned to within better than 0.3° (standard deviation).

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE PAGES

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff; ...

2017-02-10

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Sintered indium-tin oxide particles induce pro-inflammatory responses in vitro, in part through inflammasome activation.

PubMed

Badding, Melissa A; Schwegler-Berry, Diane; Park, Ju-Hyeong; Fix, Natalie R; Cummings, Kristin J; Leonard, Stephen S

2015-01-01

Indium-tin oxide (ITO) is used to make transparent conductive coatings for touch-screen and liquid crystal display electronics. As the demand for consumer electronics continues to increase, so does the concern for occupational exposures to particles containing these potentially toxic metal oxides. Indium-containing particles have been shown to be cytotoxic in cultured cells and pro-inflammatory in pulmonary animal models. In humans, pulmonary alveolar proteinosis and fibrotic interstitial lung disease have been observed in ITO facility workers. However, which ITO production materials may be the most toxic to workers and how they initiate pulmonary inflammation remain poorly understood. Here we examined four different particle samples collected from an ITO production facility for their ability to induce pro-inflammatory responses in vitro. Tin oxide, sintered ITO (SITO), and ventilation dust particles activated nuclear factor kappa B (NFκB) within 3 h of treatment. However, only SITO induced robust cytokine production (IL-1β, IL-6, TNFα, and IL-8) within 24 h in both RAW 264.7 mouse macrophages and BEAS-2B human bronchial epithelial cells. Our lab and others have previously demonstrated SITO-induced cytotoxicity as well. These findings suggest that SITO particles activate the NLRP3 inflammasome, which has been implicated in several immune-mediated diseases via its ability to induce IL-1β release and cause subsequent cell death. Inflammasome activation by SITO was confirmed, but it required the presence of endotoxin. Further, a phagocytosis assay revealed that pre-uptake of SITO or ventilation dust impaired proper macrophage phagocytosis of E. coli. Our results suggest that adverse inflammatory responses to SITO particles by both macrophage and epithelial cells may initiate and propagate indium lung disease. These findings will provide a better understanding of the molecular mechanisms behind an emerging occupational health issue.

Tunable infrared hyperbolic metamaterials with periodic indium-tin-oxide nanorods

DOE PAGES

Guo, Peijun; Chang, Robert P. H.; Schaller, Richard D.

2017-07-10

Hyperbolic metamaterials (HMMs) are artificially engineered optical media that have been used for light confinement, excited state decay rate engineering, and subwavelength imaging, due to their highly anisotropic permittivity and with it the capability of supporting high- k modes. HMMs in the infrared range can be conceived for additional applications such as free space communication, thermal engineering, and molecular sensing. Here, we demonstrate infrared HMMs comprised of periodic indium-tin-oxide nanorod arrays (ITO-NRAs). We show that the ITO-NRA based HMMs exhibit a stationary epsilon-near-pole resonance in the near-infrared regime that is insensitive to the filling ratio, and a highly tunable epsilon-near-zeromore » resonance in the mid-infrared range depending on the array periodicity. Experimental results are supported by finite-element simulations, in which the ITO-NRAs are treated both explicitly and as an effective hyperbolic media. Lastly, our work presents a low-loss HMM platform with favorable spectral tunability in the infrared range.« less

Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, Hui-Yng; School of Engineering, Nanyang Polytechnic, Singapore 569830; Shrestha, Milan

2015-09-28

Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation

NASA Astrophysics Data System (ADS)

Liu, X. D.; Jiang, E. Y.; Zhang, D. X.

2008-10-01

Amorphous and polycrystalline indium tin oxide films have been prepared by electron-beam evaporation method. The amorphous films exhibit semiconductor behavior, while metallic conductivity is observed in the polycrystalline samples. The magnetoconductivities of the polycrystalline films are positive at low temperatures and can be well described by the theory of three-dimensional weak-localization effect. In addition, the electron phase-breaking rate is proportional to T3/2. Comparing the experimental results with theory, we find that the electron-electron scattering is the dominant destroyer of the constructive interference in the films. In addition, the Coulomb interaction is the main contribution to the nontrivial corrections for the electrical conductivity at low temperatures.

Low-temperature sintering behavior of nanocrystalline indium tin oxide prepared from polymer-containing sols

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koroesi, Laszlo, E-mail: l.korosi@chem.u-szeged.hu; Papp, Szilvia; Oszko, Albert

2012-04-15

Highlights: Black-Right-Pointing-Pointer The synthesis of ITO powders and thin films from PVP-containing sols is presented. Black-Right-Pointing-Pointer The nano- and microstructures of ITO are more compact when PVP is used. Black-Right-Pointing-Pointer PVP acts both as a steric stabilizer of the sol and as a pre-sintering agent. Black-Right-Pointing-Pointer The PVP-induced enhanced sintering results in ITO with lower electrical resistance. Black-Right-Pointing-Pointer The surface composition of the ITO films is independent of the initial PVP content. -- Abstract: Indium tin hydroxide (ITH) xerogel powders and thin films with different polyvinylpyrrolidone (PVP) contents (0-22%, w/w) were prepared by a classical sol-gel method. To obtain nanocrystallinemore » indium tin oxide (ITO), the ITH xerogels were calcined at 550 Degree-Sign C. The effect of the initial polymer content on the structure of the ITO powders was studied by means of N{sub 2}-sorption measurements, small-angle X-ray scattering (SAXS), transmission and scanning electron microscopy. The N{sub 2}-sorption measurements revealed that the ITO powders obtained contained micropores and both their porosity and specific surface area decreased with increasing PVP content of the ITH xerogels. The SAXS measurements confirmed the enhanced sintering of the particles in the presence of PVP. The calculated mass fractal dimensions of the ITO powders increased significantly, indicating a significant compaction in structure. The pre-sintered structure could be achieved at relatively low temperature, which induced a significant decreasing (three orders of magnitude) in the electrical resistance of the ITO films.« less

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

NASA Astrophysics Data System (ADS)

Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Solubility of indium-tin oxide in simulated lung and gastric fluids: Pathways for human intake.

PubMed

Andersen, Jens Christian Østergård; Cropp, Alastair; Paradise, Diane Caroline

2017-02-01

From being a metal with very limited natural distribution, indium (In) has recently become disseminated throughout the human society. Little is known of how In compounds behave in the natural environment, but recent medical studies link exposure to In compounds to elevated risk of respiratory disorders. Animal tests suggest that exposure may lead to more widespread damage in the body, notably the liver, kidneys and spleen. In this paper, we investigate the solubility of the most widely used In compound, indium-tin oxide (ITO) in simulated lung and gastric fluids in order to better understand the potential pathways for metals to be introduced into the bloodstream. Our results show significant potential for release of In and tin (Sn) in the deep parts of the lungs (artificial lysosomal fluid) and digestive tract, while the solubility in the upper parts of the lungs (the respiratory tract or tracheobronchial tree) is very low. Our study confirms that ITO is likely to remain as solid particles in the upper parts of the lungs, but that particles are likely to slowly dissolve in the deep lungs. Considering the prolonged residence time of inhaled particles in the deep lung, this environment is likely to provide the major route for uptake of In and Sn from inhaled ITO nano- and microparticles. Although dissolution through digestion may also lead to some uptake, the much shorter residence time is likely to lead to much lower risk of uptake. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Color properties of transparent and heat-reflecting MgF2-coated indium-tin-oxide films.

PubMed

Hamberg, I; Granqvist, C G

1983-02-15

The visual appearance of antireflection-coated transparent and heat-reflecting indium-tin-oxide (ITO) films on glass was studied by a colorimetric analysis in which the chromaticity coordinates for transmitted and reflected daylight were evaluated for various film thicknesses. A color purity of <1% in normal transmission and <10% in normal reflection could be achieved with ITO thicknesses in the 220-260- or 335-365-nm ranges and MgF2 thicknesses in the 90-105-nm range. These design criteria yield very efficient window coatings with high visual transmittance, low thermal emittance, and little or no perceived color.

Electron beam induced damage in ITO coated Kapton. [Indium Tin Oxide

NASA Technical Reports Server (NTRS)

Krainsky, I.; Gordon, W. L.; Hoffman, R. W.

1981-01-01

Data for the stability of thin conductive indium tin oxide films on 0.003 inch thick Kapton substrates during exposure of the surface to electron beams are reported. The electron beam energy was 3 keV and the diameter was about 0.8 mm. Thermal effects and surface modifications are considered. For primary current greater than 0.6 microamperes, an obvious dark discoloration with diameter approximately that of the beam was produced. The structure of the discolored region was studied with the scanning electron microscope, and the findings are stated. Surface modifications were explored by AES, obtaining spectra and secondary emission coefficient as a function of time for different beam intensities. In all cases beam exposure results in a decrease of the secondary yield but because of thermal effects this change, as well as composition changes, cannot be directly interpreted in terms of electron beam dosage.

Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487; Shi, Wenwu

2014-10-15

Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titaniamore » or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.« less

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.

PubMed

Lai, Wei-Chih; Lin, Chih-Nan; Lai, Yi-Chun; Yu, Peichen; Chi, Gou Chung; Chang, Shoou-Jinn

2014-03-10

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2004-01-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2003-12-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

A comparison of ZnO films deposited on indium tin oxide and soda lime glass under identical conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deka, Angshuman; Nanda, Karuna Kar

2013-06-15

ZnO films have been grown via a vapour phase transport (VPT) on soda lime glass (SLG) and indium-tin oxide (ITO) coated glass. ZnO film on ITO had traces of Zn and C which gives them a dark appearance while that appears yellowish-white on SLG. X-ray photoelectron spectroscopy studies confirm the traces of C in the form of C-O. The photoluminescence studies reveal a prominent green luminescence band for ZnO film on ITO.

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

NASA Astrophysics Data System (ADS)

Guo, H.; Andagana, H. B.; Cao, X. A.

2010-05-01

Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg ~4 × 1019 cm-3) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10-2 Ω cm-2 range, but were more stable above 600°C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

PubMed Central

Noviyana, Imas; Lestari, Annisa Dwi; Putri, Maryane; Won, Mi-Sook; Bae, Jong-Seong; Heo, Young-Woo; Lee, Hee Young

2017-01-01

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C. PMID:28773058

Using Indium Tin Oxide To Mitigate Dust on Viewing Ports

NASA Technical Reports Server (NTRS)

2008-01-01

NASA plans to use a number of onboard viewing ports to measure lunar regolith in situ and to monitor robotic and human activities on the lunar or Martian surface. Because of the size and abundance of dust particles on these bodies, the potential for dust to occlude viewing ports and windows is high enough to threaten system lifetime and reliability, especially when activities rely on relaying video to either a habitat module or controllers on Earth. This project uses a technology being developed by KSC's Electrostatics and Surface Physics Laboratory to remove dust from windowlike surfaces. The technology applies an alternating electric potential to interlaced electrodes. In this application, we use indium tin oxide (ITO) to create various electrode patterns in order to determine the most reliable pattern for dust removal. This technology has application to systems where optical clarity is important. Specifically, this project considers the in situ resource utilization (ISRU) application of a viewing port for Raman spectroscopy, where the electrode pattern on glass would be coated with a scratch-resistant sapphire film (Al2O3).

Time and voltage dependences of nanoscale dielectric constant modulation on indium tin oxide films

NASA Astrophysics Data System (ADS)

Li, Liang; Hao, Haoyue; Zhao, Hua

2017-01-01

The modulation of indium tin oxide (ITO) films through surface charge accumulation plays an important role in many different applications. In order to elaborately study the modulation, we measured the dielectric constant of the modulated layer through examining the excitation of surface plasmon polaritons. Charges were pumped on the surfaces of ITO films through applying high voltage in appropriate directions. Experiments unveiled that the dielectric constant of the modulated layer had large variation along with the nanoscale charge accumulation. Corresponding numerical results were worked out through combining Drude model and Mayadas-Shatzkes model. Based on the above results, we deduced the time and voltage dependences of accumulated charge density, which revealed a long-time charge accumulation process.

Rear-side picosecond laser ablation of indium tin oxide micro-grooves

NASA Astrophysics Data System (ADS)

Liu, Peng; Wang, Wenjun; Mei, Xuesong; Liu, Bin; Zhao, Wanqin

2015-06-01

A comparative study of the fabrication of micro-grooves in indium tin oxide films by picosecond laser ablation for application in thin film solar cells is presented, evaluating the variation of different process parameters. Compared with traditional front-side ablation, rear-side ablation results in thinner grooves with varying laser power at a certain scan speed. In particular, and in contrast to front-side ablation, the width of the micro-grooves remains unchanged when the scan speed was changed. Thus, the micro-groove quality can be optimized by adjusting the scan speed while the groove width would not be affected. Furthermore, high-quality micro-grooves with ripple free surfaces and steep sidewalls could only be achieved when applying rear-side ablation. Finally, the formation mechanism of micro-cracks on the groove rims during rear-side ablation is analyzed and the cracks can be almost entirely eliminated by an optimization of the scan speed.

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

NASA Astrophysics Data System (ADS)

Saadeddin, I.; Hilal, H. S.; Decourt, R.; Campet, G.; Pecquenard, B.

2012-07-01

Indium oxide co-doped with tin and zinc (ITZO) ceramics have been successfully prepared by direct sintering of the powders mixture at 1300 °C. This allowed us to easily fabricate large highly dense target suitable for sputtering transparent conducting oxide (TCO) films, without using any cold or hot pressing techniques. Hence, the optimized ITZO ceramic reaches a high relative bulk density (˜ 92% of In2O3 theoretical density) and higher than the well-known indium oxide doped with tin (ITO) prepared under similar conditions. All X-ray diagrams obtained for ITZO ceramics confirms a bixbyte structure typical for In2O3 only. This indicates a higher solubility limit of Sn and Zn when they are co-doped into In2O3 forming a solid-solution. A very low value of electrical resistivity is obtained for [In2O3:Sn0.10]:Zn0.10 (1.7 × 10-3 Ω cm, lower than ITO counterpart) which could be fabricated to high dense ceramic target suing pressure-less sintering.

Silver nanostructures synthesis via optically induced electrochemical deposition

NASA Astrophysics Data System (ADS)

Li, Pan; Liu, Na; Yu, Haibo; Wang, Feifei; Liu, Lianqing; Lee, Gwo-Bin; Wang, Yuechao; Li, Wen Jung

2016-06-01

We present a new digitally controlled, optically induced electrochemical deposition (OED) method for fabricating silver nanostructures. Projected light patterns were used to induce an electrochemical reaction in a specialized sandwich-like microfluidic device composed of one indium tin oxide (ITO) glass electrode and an optically sensitive-layer-covered ITO electrode. Silver polyhedral nanoparticles, triangular and hexagonal nanoplates, and nanobelts were controllably synthesized in specific positions at which projected light was illuminated. The silver nanobelts had rectangular cross-sections with an average width of 300 nm and an average thickness of 100 nm. By controlling the applied voltage, frequency, and time, different silver nanostructure morphologies were obtained. Based on the classic electric double-layer theory, a dynamic process of reduction and crystallization can be described in terms of three phases. Because it is template- and surfactant-free, the digitally controlled OED method facilitates the easy, low cost, efficient, and flexible synthesis of functional silver nanostructures, especially quasi-one-dimensional nanobelts.

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

NASA Astrophysics Data System (ADS)

Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

2012-09-01

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

Large optical nonlinearity of indium tin oxide in its epsilon-near-zero region.

PubMed

Alam, M Zahirul; De Leon, Israel; Boyd, Robert W

2016-05-13

Nonlinear optical phenomena are crucial for a broad range of applications, such as microscopy, all-optical data processing, and quantum information. However, materials usually exhibit a weak optical nonlinearity even under intense coherent illumination. We report that indium tin oxide can acquire an ultrafast and large intensity-dependent refractive index in the region of the spectrum where the real part of its permittivity vanishes. We observe a change in the real part of the refractive index of 0.72 ± 0.025, corresponding to 170% of the linear refractive index. This change in refractive index is reversible with a recovery time of about 360 femtoseconds. Our results offer the possibility of designing material structures with large ultrafast nonlinearity for applications in nanophotonics. Copyright © 2016, American Association for the Advancement of Science.

Structure deformation of indium oxide from nanoparticles into nanostructured polycrystalline films by in situ thermal radiation treatment

PubMed Central

2013-01-01

A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment. PMID:24134646

Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

NASA Astrophysics Data System (ADS)

Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

2017-10-01

Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

Reversible wettability of electron-beam deposited indium-tin-oxide driven by ns-UV irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Persano, Luana; Center for Biomolecular Nanotechnologies UNILE, Istituto Italiano di Tecnologia, Via Barsanti, I-73010 Arnesano-LE; Del Carro, Pompilio

2012-04-09

Indium tin oxide (ITO) is one of the most widely used semiconductor oxides in the field of organic optoelectronics, especially for the realization of anode contacts. Here the authors report on the control of the wettability properties of ITO films deposited by reactive electron beam deposition and irradiated by means of nanosecond-pulsed UV irradiation. The enhancement of the surface water wettability, with a reduction of the water contact angle larger than 50 deg., is achieved by few tens of seconds of irradiation. The analyzed photo-induced wettability change is fully reversible in agreement with a surface-defect model, and it can bemore » exploited to realize optically transparent, conductive surfaces with controllable wetting properties for sensors and microfluidic circuits.« less

Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

NASA Technical Reports Server (NTRS)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

Copper nanowire-graphene core-shell nanostructure for highly stable transparent conducting electrodes.

PubMed

Ahn, Yumi; Jeong, Youngjun; Lee, Donghwa; Lee, Youngu

2015-03-24

A copper nanowire-graphene (CuNW-G) core-shell nanostructure was successfully synthesized using a low-temperature plasma-enhanced chemical vapor deposition process at temperatures as low as 400 °C for the first time. The CuNW-G core-shell nanostructure was systematically characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman, and X-ray photoelectron spectroscopy measurements. A transparent conducting electrode (TCE) based on the CuNW-G core-shell nanostructure exhibited excellent optical and electrical properties compared to a conventional indium tin oxide TCE. Moreover, it showed remarkable thermal oxidation and chemical stability because of the tight encapsulation of the CuNW with gas-impermeable graphene shells. The potential suitability of CuNW-G TCE was demonstrated by fabricating bulk heterojunction polymer solar cells. We anticipate that the CuNW-G core-shell nanostructure can be used as an alternative to conventional TCE materials for emerging optoelectronic devices such as flexible solar cells, displays, and touch panels.

THz behavior of indium-tin-oxide films on p-Si substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brown, E. R., E-mail: elliott.brown@wright.edu; Zhang, W-D., E-mail: wzzhang@fastmail.fm; Chen, H.

2015-08-31

This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56 Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference in the substrate. An accurate transmission-line-based equivalent circuit is developed to explain the effect, and then used to show that the net reflectivity and absorptivity necessarilymore » oscillate with frequency. This has important implications for the use of thin-film metallic coupling layers on THz components and devices, such as detectors and sources. Consistent with previous reported results, the sheet conductance that best fits the THz transmittance data is roughly 50% higher than the DC values for both samples.« less

Dye-controlled interfacial electron transfer for high-current indium tin oxide photocathodes.

PubMed

Huang, Zhongjie; He, Mingfu; Yu, Mingzhe; Click, Kevin; Beauchamp, Damian; Wu, Yiying

2015-06-01

Efficient sensitized photocathodes are highly desired for solar fuels and tandem solar cells, yet the development is hindered by the scarcity of suitable p-type semiconductors. The generation of high cathodic photocurrents by sensitizing a degenerate n-type semiconductor (tin-doped indium oxide; ITO) is reported. The sensitized mesoporous ITO electrodes deliver cathodic photocurrents of up to 5.96±0.19 mA cm(-2), which are close to the highest record in conventional p-type sensitized photocathodes. This is realized by the rational selection of dyes with appropriate energy alignments with ITO. The energy level alignment between the highest occupied molecular orbital of the sensitizer and the conduction band of ITO is crucial for efficient hole injection. Transient absorption spectroscopy studies demonstrate that the cathodic photocurrent results from reduction of the photoexcited sensitizer by free electrons in ITO. Our results reveal a new perspective toward the selection of electrode materials for sensitized photocathodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance.

PubMed

Cao, Bing; He, Xiaoming; Sorge, Jason B; Lalany, Abeed; Ahadi, Kaveh; Afshar, Amir; Olsen, Brian C; Hauger, Tate C; Mobarok, Md Hosnay; Li, Peng; Cadien, Kenneth C; Brett, Michael J; Luber, Erik J; Buriak, Jillian M

2017-11-08

Organic solar cells (OSCs) are a complex assembly of disparate materials, each with a precise function within the device. Typically, the electrodes are flat, and the device is fabricated through a layering approach of the interfacial layers and photoactive materials. This work explores the integration of high surface area transparent electrodes to investigate the possible role(s) a three-dimensional electrode could take within an OSC, with a BHJ composed of a donor-acceptor combination with a high degree of electron and hole mobility mismatch. Nanotree indium tin oxide (ITO) electrodes were prepared via glancing angle deposition, structures that were previously demonstrated to be single-crystalline. A thin layer of zinc oxide was deposited on the ITO nanotrees via atomic layer deposition, followed by a self-assembled monolayer of C 60 -based molecules that was bound to the zinc oxide surface through a carboxylic acid group. Infiltration of these functionalized ITO nanotrees with the photoactive layer, the bulk heterojunction comprising PC 71 BM and a high hole mobility low band gap polymer (PDPPTT-T-TT), led to families of devices that were analyzed for the effect of nanotree height. When the height was varied from 0 to 50, 75, 100, and 120 nm, statistically significant differences in device performance were noted with the maximum device efficiencies observed with a nanotree height of 75 nm. From analysis of these results, it was found that the intrinsic mobility mismatch between the donor and acceptor phases could be compensated for when the electron collection length was reduced relative to the hole collection length, resulting in more balanced charge extraction and reduced recombination, leading to improved efficiencies. However, as the ITO nanotrees increased in height and branching, the decrease in electron collection length was offset by an increase in hole collection length and potential deleterious electric field redistribution effects, resulting in

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

NASA Astrophysics Data System (ADS)

Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

2015-09-01

This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

Contribution of tin in electrochemical properties of zinc antimonate nanostructures: An electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

Balasubramaniam, M.; Balakumar, S.

2018-04-01

Tin (Sn) doped ZnSb2O6 nanostructures was synthesized by chemical precipitation method and was used as an electrode material for supercapacitors to explore its electrochemical stability and potentiality as energy storage materials. Their characteristic structural, morphological and compositional features were investigated through XRD, FESEM and XPS analysis. Results showed that the nanostructures have well ordered crystalline features with spherical particle morphology. As the size and morphology are the vital parameters in exhibiting better electrochemical properties, the prepared nanostructures exhibited a significant specific capacitance of 222 F/g at a current density of 0.5 A/g respectively. While charging and discharging for 1000 cycles, the capacitance retention was enhanced to 105.0% which depicts the stability and activeness of electrochemical sites present in the Sn doped ZnSb2O6 nanostructures even after cycling. Hence, the inclusion of Sn into ZnSb2O6 has contributed in improving the electrochemical properties thereby it represents itself as a potential electrode material for supercapacitors.

Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

NASA Astrophysics Data System (ADS)

Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

2018-01-01

Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V-1 s-1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm-3) and low resistivity (3 × 10-4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

PubMed Central

Ho, Wen-Jeng; Lin, Jian-Cheng; Liu, Jheng-Jie; Bai, Wen-Bin; Shiao, Hung-Pin

2017-01-01

This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2), indium tin oxide (ITO), and a hybrid layer of SiO2/ITO applied using Radio frequency (RF) sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52%) exceeded that of cells with a SiO2 antireflective coating (21.92%). Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating. PMID:28773063

Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals

NASA Astrophysics Data System (ADS)

Hu, Quanli; Ha, Sang-Hyub; Lee, Hyun Ho; Yoon, Tae-Sik

2011-12-01

A nanocrystal (NC) floating gate memory with solution-processed indium-zinc-tin-oxide (IZTO) channel and silver (Ag) NCs embedded in thin gate dielectric layer (SiO2(30 nm)/Al2O3(3 nm)) was fabricated. Both the IZTO channel and colloidal Ag NC layers were prepared by spin-coating and subsequent annealing, and dip-coating process, respectively. A threshold voltage shift up to ~0.9 V, corresponding to the electron density of 6.5 × 1011 cm-2, at gate pulsing <=10 V was achieved by the charging of high density NCs. These results present the successful non-volatile memory characteristics of an oxide-semiconductor transistor fabricated through solution processes.

Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

2018-04-01

We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

Indium Tin Oxide-Magnesium Fluoride Co-Deposited Films for Spacecraft Applications

NASA Technical Reports Server (NTRS)

Dever, Joycer A.; Rutledge, Sharon K.; Hambourger, Paul D.; Bruckner, Eric; Ferrante, Rhea; Pal, Anna Marie; Mayer, Karen; Pietromica, Anthony J.

1998-01-01

Highly transparent coatings with a maximum sheet resistivity between 10(exp 8) and 10(exp 9) ohms/square are desired to prevent charging of solar arrays for low Earth polar orbit and geosynchronous orbit missions. Indium tin oxide (ITO) and magnesium fluoride (MgF2) were ion beam sputter co-deposited onto fused silica substrates and were evaluated for transmittance, sheet resistivity and the effects of simulated space environments including atomic oxygen (AO) and vacuum ultraviolet (VUV) radiation. Optical properties and sheet resistivity as a function of MgF2 content in the films will be presented. Films containing 8.4 wt.% MgF2 were found to be highly transparent and provided sheet resistivity in the required range. These films maintained a high transmittance upon exposure to AO and to VUV radiation, although exposure to AO in the presence of charged species and intense electromagnetic radiation caused significant degradation in film transmittance. Sheet resistivity of the as-fabricated films increased with time in ambient conditions. Vacuum beat treatment following film deposition caused a reduction in sheet resistivity. However, following vacuum heat treatment, sheet resistivity values remained stable during storage in ambient conditions.

Positron beam study of indium tin oxide films on GaN

NASA Astrophysics Data System (ADS)

Cheung, C. K.; Wang, R. X.; Beling, C. D.; Djurisic, A. B.; Fung, S.

2007-02-01

Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 °C without oxygen and at 200 °C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 × 10-3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy.

Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

NASA Astrophysics Data System (ADS)

Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

2017-09-01

Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

Synthesis and characterization of mesoporous indium tin oxide possessing an electronically conductive framework.

PubMed

Emons, Theo T; Li, Jianquan; Nazar, Linda F

2002-07-24

The new mesoporous transparent conducting oxide based on indium-tin-oxide, meso-ITO, has been synthesized by a modified sol-gel method, using CTAB as the surfactant. Critical was the employment of triethanolamine to control the rate of hydrolysis and inhibit deposition of the bulk oxides. Removal of the surfactant by calcination yielded a relatively well-ordered worm-hole motif arrangement of pores visible in the TEM and stable to 400 degrees C. BET measurements revealed no hysteresis in the absorption-desorption isotherm, consistent with a narrow pore-size distribution (between 20 and 40 A depending on the In:Sn ratio); surface areas ranged between 270 and 310 m2/g. This colorless material is the first mesoporous oxide exhibiting substantial framework conductivity, with a conductivity at 25 degrees C of 1.2 x 10-3 S/cm. This distinguishes it from mesoporous mixed-valence transition-metal oxides that exhibit weak hopping semiconductor behavior and much lower conductivity.

Highly flexible transparent electrodes based on mesh-patterned rigid indium tin oxide.

PubMed

Sakamoto, Kosuke; Kuwae, Hiroyuki; Kobayashi, Naofumi; Nobori, Atsuki; Shoji, Shuichi; Mizuno, Jun

2018-02-12

We developed highly bendable transparent indium tin oxide (ITO) electrodes with a mesh pattern for use in flexible electronic devices. The mesh patterns lowered tensile stress and hindered propagation of cracks. Simulations using the finite element method confirmed that the mesh patterns decreased tensile stress by over 10% because of the escaped strain to the flexible film when the electrodes were bent. The proposed patterned ITO electrodes were simply fabricated by photolithography and wet etching. The resistance increase ratio of a mesh-patterned ITO electrode after bending 1000 times was at least two orders of magnitude lower than that of a planar ITO electrode. In addition, crack propagation was stopped by the mesh pattern of the patterned ITO electrode. A mesh-patterned ITO electrode was used in a liquid-based organic light-emitting diode (OLED). The OLED displayed the same current density-voltage-luminance (J-V-L) curves before and after bending 100 times. These results indicate that the developed mesh-patterned ITO electrodes are attractive for use in flexible electronic devices.

Nanostructured magnesium oxide biosensing platform for cholera detection

NASA Astrophysics Data System (ADS)

Patel, Manoj K.; Azahar Ali, Md.; Agrawal, Ved V.; Ansari, Z. A.; Ansari, S. G.; Malhotra, B. D.

2013-04-01

We report fabrication of highly crystalline nanostructured magnesium oxide (NanoMgO, size >30 nm) film electrophoretically deposited onto indium-tin-oxide (ITO) glass substrate for Vibrio cholerae detection. The single stranded deoxyribonucleic acid (ssDNA) probe, consisting of 23 bases (O1 gene sequence) immobilized onto NanoMgO/ITO electrode surface, has been characterized using electrochemical, Fourier Transform-Infra Red, and UltraViolet-visible spectroscopic techniques. The hybridization studies of ssDNA/NanoMgO/ITO bioelectrode with fragmented target DNA conducted using differential pulse voltammetry reveal sensitivity as 16.80 nA/ng/cm2, response time of 3 s, linearity as 100-500 ng/μL, and stability of about 120 days.

Early Changes in Clinical, Functional, and Laboratory Biomarkers in Workers at Risk of Indium Lung Disease

PubMed Central

Virji, M. Abbas; Trapnell, Bruce C.; Carey, Brenna; Healey, Terrance; Kreiss, Kathleen

2014-01-01

Rationale: Occupational exposure to indium compounds, including indium–tin oxide, can result in potentially fatal indium lung disease. However, the early effects of exposure on the lungs are not well understood. Objectives: To determine the relationship between short-term occupational exposures to indium compounds and the development of early lung abnormalities. Methods: Among indium–tin oxide production and reclamation facility workers, we measured plasma indium, respiratory symptoms, pulmonary function, chest computed tomography, and serum biomarkers of lung disease. Relationships between plasma indium concentration and health outcome variables were evaluated using restricted cubic spline and linear regression models. Measurements and Main Results: Eighty-seven (93%) of 94 indium–tin oxide facility workers (median tenure, 2 yr; median plasma indium, 1.0 μg/l) participated in the study. Spirometric abnormalities were not increased compared with the general population, and few subjects had radiographic evidence of alveolar proteinosis (n = 0), fibrosis (n = 2), or emphysema (n = 4). However, in internal comparisons, participants with plasma indium concentrations ≥ 1.0 μg/l had more dyspnea, lower mean FEV1 and FVC, and higher median serum Krebs von den Lungen-6 and surfactant protein-D levels. Spline regression demonstrated nonlinear exposure response, with significant differences occurring at plasma indium concentrations as low as 1.0 μg/l compared with the reference. Associations between health outcomes and the natural log of plasma indium concentration were evident in linear regression models. Associations were not explained by age, smoking status, facility tenure, or prior occupational exposures. Conclusions: In indium–tin oxide facility workers with short-term, low-level exposure, plasma indium concentrations lower than previously reported were associated with lung symptoms, decreased spirometric parameters, and increased serum

Development of a reagentless electrochemiluminescent electrode for flow injection analysis using copolymerised luminol/aniline on nano-TiO2 functionalised indium-tin oxide glass.

PubMed

Liu, Chao; Wei, Xiuhua; Tu, Yifeng

2013-07-15

In this study, a nano-structured copolymer of luminol/aniline (PLA) was deposited onto nano-TiO2-functionalised indium tin oxide (ITO)-coated glass by electrochemical polymerisation using cyclic voltammetry (CV). The resulting reagentless electrochemiluminescent (ECL) electrode (ECLode) can be used for flow injection analysis (FIA). The properties of the ECLode were characterised by CV, electrochemical impedance spectroscopy (EIS) and scanning electron microscopy (SEM). The ECLode has high background ECL emission as well as excellent stability and reproducibility, and yielding sensitive response towards target analytes. The ECL emissions of the ECLode were 50 times higher than PLA/ITO, and 500 times higher than polyluminol (PL)/ITO. The ECLode showed sensitive responses to reactive oxygen species (ROSs), permitting its application for determination of antioxidants by quenching. Under optimised conditions, an absolute detection limit of 69.9 pg was obtained for resveratrol, comparable to the highest levels of sensitivity achieved by other methods. Thus, the gross antioxidant content of red wine was determined, with satisfactory recoveries between 87.6% and 108.3%. These results suggest a bright future for the use of the ECLode for single-channel FIA due to its high sensitivity, accuracy and reproducibility. Copyright © 2013 Elsevier B.V. All rights reserved.

Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN.

PubMed

Hou, Wenting; Stark, Christoph; You, Shi; Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

2012-08-10

In search of a better transparent contact to p-GaN, we analyze various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compare to Ni/Au, NiZn/Ag, and ITO. The metal layer boosts conductivity while the ITO thickness can be adjusted to constructive transmission interference on GaN that exceeds extraction from bare GaN. We find a best compromise for an Ag/ITO (3 nm/67 nm) ohmic contact with a relative transmittance of 97% of the bare GaN near 530 nm and a specific contact resistance of 0.03 Ω·cm2. The contact proves suitable for green light-emitting diodes in epi-up geometry.

Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Phelps, P. W.; Coutts, T. J.; Tzafaras, N.

1991-01-01

Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

Morphology and phase transformations of tin oxide nanostructures synthesized by the hydrothermal method in the presence of dicarboxylic acids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zima, Tatyana, E-mail: zima@solid.nsc.ru; Novosibirsk State Technical University, 20 K. Marx Prospect, Novosibirsk 630092; Bataev, Ivan

A new approach to the synthesis of non-stoichiometric tin oxide structures with different morphologies and the phase compositions has been evaluated. The nanostructures were synthesized by hydrothermal treatment of the mixtures of dicarboxylic acids ― aminoterephthalic or oxalic ― with nanocrystalline SnO{sub 2} powder, which was obtained via the sol-gel technology. The products were characterized by Raman and IR spectroscopy, SEM, HRTEM, and XRD analysis. It was shown that the controlled addition of a dicarboxylic acid leads not only to a change in the morphology of the nanostructures, but also to SnO{sub 2}–SnO{sub 2}/Sn{sub 3}O{sub 4}–Sn{sub 3}O{sub 4}–SnO phase transformations.more » A single-phase Sn{sub 3}O{sub 4} in the form of the well-separated hexagonal nanoplates and mixed SnO{sub 2}/Sn{sub 3}O{sub 4} phases in the form of hierarchical flower-like structures were obtained in the presence of organic additives. The effects of concentration, redox activity of the acids and heat treatment on the basic characteristics of the synthesized tin oxide nanostructures and phase transformations in the synthesized materials are discussed. - Graphical abstract: The controlled addition of aminoterephthalic or oxalic acid leads not only to a change in the morphology of the nanostructures, but also to SnO{sub 2}–SnO{sub 2}/Sn{sub 3}O{sub 4}–Sn{sub 3}O{sub 4}–SnO phase transformations. - Highlights: • A new approach to the synthesis of non-stoichiometric tin oxide structures is studied. • Tin oxide structures are synthesized via hydrothermal method with dicarboxylic acids. • Morphology and phase composition are changed with redox activity and dosage of acid. • The redox activity of acid has an effect on ratio of SnO and SnO{sub 2} in crystal structure. • A pure phase Sn{sub 3}O{sub 4} nanoplates and SnO{sub 2}/Sn{sub 3}O{sub 4} hierarchical structures are formed.« less

Morphology and phase transformations of tin oxide nanostructures synthesized by the hydrothermal method in the presence of dicarboxylic acids

NASA Astrophysics Data System (ADS)

Zima, Tatyana.; Bataev, Ivan

2016-11-01

A new approach to the synthesis of non-stoichiometric tin oxide structures with different morphologies and the phase compositions has been evaluated. The nanostructures were synthesized by hydrothermal treatment of the mixtures of dicarboxylic acids ― aminoterephthalic or oxalic ― with nanocrystalline SnO2 powder, which was obtained via the sol-gel technology. The products were characterized by Raman and IR spectroscopy, SEM, HRTEM, and XRD analysis. It was shown that the controlled addition of a dicarboxylic acid leads not only to a change in the morphology of the nanostructures, but also to SnO2-SnO2/Sn3O4-Sn3O4-SnO phase transformations. A single-phase Sn3O4 in the form of the well-separated hexagonal nanoplates and mixed SnO2/Sn3O4 phases in the form of hierarchical flower-like structures were obtained in the presence of organic additives. The effects of concentration, redox activity of the acids and heat treatment on the basic characteristics of the synthesized tin oxide nanostructures and phase transformations in the synthesized materials are discussed.

Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.

PubMed

Wang, Jian-Xun; Kwon, Sang Jik; Han, Jae-Hee; Cho, Eou Sik

2013-11-01

In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost.

Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

PubMed

Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

2018-05-01

A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

Rapid synthesis of tin oxide nanostructures by microwave-assisted thermal oxidation for sensor applications

NASA Astrophysics Data System (ADS)

Phadungdhitidhada, S.; Ruankham, P.; Gardchareon, A.; Wongratanaphisan, D.; Choopun, S.

2017-09-01

In the present work nanostructures of tin oxides were synthesized by a microwave-assisted thermal oxidation. Tin precursor powder was loaded into a cylindrical quartz tube and further radiated in a microwave oven. The as-synthesized products were characterized by scanning electron microscope, transmission electron microscope, and x-ray diffractometer. The results showed that two different morphologies of SnO2 microwires (MWs) and nanoparticles (NPs) were obtained in one minute of microwave radiation under atmospheric ambient. A few tens of the SnO2 MWs with the length of 10-50 µm were found. Some parts of the MWs were decorated with the SnO2 NPs. However, most of the products were SnO2 NPs with the diameter ranging from 30-200 nm. Preparation under loosely closed system lead to mixed phase SnO-SnO2 NPs with diameter of 30-200 nm. The single-phase of SnO2 could be obtained by mixing the Sn precursor powders with CuO2. The products were mostly found to be SnO2 nanowires (NWs) and MWs. The diameter of SnO2 NWs was less than 50 nm. The SnO2 NPs, MWs, and NWs were in the cassiterite rutile structure phase. The SnO NPs was in the tetragonal structure phase. The growth direction of the SnO2 NWs was observed in (1 1 0) and (2 2 1) direction. The ethanol sensor performance of these tin oxide nanostructures showed that the SnO-SnO2 NPs exhibited extremely high sensitivity. Invited talk at 5th Thailand International Nanotechnology Conference (Nano Thailand-2016), 27-29 November 2016, Nakhon Ratchasima, Thailand.

Improving the optoelectronic properties of titanium-doped indium tin oxide thin films

NASA Astrophysics Data System (ADS)

Taha, Hatem; Jiang, Zhong-Tao; Henry, David J.; Amri, Amun; Yin, Chun-Yang; Mahbubur Rahman, M.

2017-06-01

The focus of this study is on a sol-gel method combined with spin-coating to prepare high-quality transparent conducting oxide (TCO) films. The structural, morphological, optical and electrical properties of sol-gel-derived pure and Ti-doped indium tin oxide (ITO) thin films were studied as a function of the concentration of the Ti (i.e. 0 at%, 2 at% and 4 at%) and annealing temperatures (150 °C-600 °C). FESEM measurements indicate that all the films are ˜350 nm thick. XRD analysis confirmed the cubic bixbyite structure of the polycrystalline indium oxide phase for all of the thin films. Increasing the Ti ratio, as well as the annealing temperature, improved the crystallinity of the films. Highly crystalline structures were obtained at 500 °C, with average grain sizes of about 50, 65 and 80 nm for Ti doping of 0 at%, 2 at% and 4 at%, respectively. The electrical and optical properties improved as the annealing temperature increased, with an enlarged electronic energy band gap and an optical absorption edge below 280 nm. In particular, the optical transmittance and electrical resistivity of the samples with a 4 at% Ti content improved from 87% and 7.10 × 10-4 Ω.cm to 92% and 1.6 × 10-4 Ω.cm, respectively. The conductivity, especially for the annealing temperature at 150 °C, is acceptable for many applications such as flexible electronics. These results demonstrate that unlike the more expensive and complex vacuum sputtering process, high-quality Ti-doped ITO films can be achieved by fast processing, simple wet-chemistry, and easy doping level control with the possibility of producing films with high scalability.

Germanium and indium

USGS Publications Warehouse

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

southeastern Yunnan Province), and the Dabaoshan SEDEX deposit (located in the Nanling region of China) contain indium-enriched sphalerite. Another major potential source of indium occurs in the polymetallic tin-tungsten belt in the Eastern Cordillera of the Andes Mountains of Bolivia. Deposits there occur as dense arrays of narrow, elongate, indium-enriched tin oxide-polymetallic sulfide veins in volcanic rocks and porphyry stocks.Information about the behavior of germanium and indium in the environment is limited. In surface weathering environments, germanium and indium may dissolve from host minerals and form complexes with chloride, fluoride, hydroxide, organic matter, phosphate, or sulfate compounds. The tendency for germanium and indium to be dissolved and transported largely depends upon the pH and temperature of the weathering solutions. Because both elements are commonly concentrated in sulfide minerals, they can be expected to be relatively mobile in acid mine drainage where oxidative dissolution of sulfide minerals releases metals and sulfuric acid, resulting in acidic pH values that allow higher concentrations of metals to be dissolved into solution.

Fabrication of flexible indium tin oxide-free polymer solar cells with silver nanowire transparent electrode

NASA Astrophysics Data System (ADS)

Lin, Ming-Yi; Chen, Tsun-Jui; Xu, Wei-Feng; Hsiao, Li-Jen; Budiawan, Widhya; Tu, Wei-Chen; Chen, Shih-Lun; Chu, Chih-Wei; Wei, Pei-Kuen

2018-03-01

Flexible indium tin oxide (ITO)-free poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PC61BM) solar cells with a spin-coated silver nanowire transparent electrode are demonstrated. The solution-processed silver nanowire thin film not only exhibits high transmission (∼87%), but also shows low sheet resistance R s (∼25 Ω/sq). For solar cells with a conventional structure, the power conversion efficiency (PCE) of devices based on silver nanowires can reach around 2.29%. For the inverted structure, the PCE of devices can reach 3.39%. Conventional and inverted flexible ITO-based P3HT:PC61BM solar cells are also fabricated as a reference for comparison. For both types of solar cells, the PCE of ITO-free devices is very close that of an ITO-based polymer solar cell.

Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

NASA Astrophysics Data System (ADS)

Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

2015-06-01

Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

Indium tin oxide based chip for optical and electrochemical characterization of protein-cell interaction

NASA Astrophysics Data System (ADS)

Choi, Yong Hyun; Min, Junhong; Cho, Sungbo

2015-06-01

Analysis on the interaction between proteins and cells is required for understanding the cellular behaviour and response. In this article, we characterized the adhesion and growth of 293/GFP cells on fetal bovine serum (FBS) coated indium tin oxide (ITO) electrode. Using optical and electrochemical measurement, it was able to detect the adsorption of the protein on the surface of the ITO electrode dependent on the concentration of the protein in the immersing solution or the immersing time. An increase in the amount of the adsorbed serum protein resulted in a decrease in anodic peak current and an increase in the charge transfer resistance extracted from the equivalent circuit fitting analysis. More cells adhered and proliferated on the ITO electrode which was pre-immersed in FBS medium rather than bare electrode. The effect of the FBS on cell behaviors was reflected in the impedance monitoring of cells at 21.5 kHz.

Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

NASA Astrophysics Data System (ADS)

Chiu, Shao-Pin; Chung, Hui-Fang; Lin, Yong-Han; Kai, Ji-Jung; Chen, Fu-Rong; Lin, Juhn-Jong

2009-03-01

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few µm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

Structure-Property Relationship of Phenylene-Based Self-Assembled-Monolayers for Record Low Work Function of Indium Tin Oxide.

PubMed

Benneckendorf, Frank S; Hillebrandt, Sabina; Ullrich, Florian; Rohnacher, Valentina; Hietzschold, Sebastian; Jänsch, Daniel; Freudenberg, Jan; Beck, Sebastian; Mankel, Eric; Jaegermann, Wolfram; Pucci, Annemarie; Bunz, Uwe H F; Müllen, Klaus

2018-06-20

Studying the structure-property relations of tailored dipolar phenyl and biphenylphosphonic acids we report self-assembled monolayers with a significant decrease of the work function (WF) of indium-tin oxide (ITO) electrodes. While the strengths of the dipoles are varied through the different molecular lengths and the introduction of electron-withdrawing fluorine atoms, the surface energy is kept constant through the electron-donating N,N dimethylamine head groups. The self-assembled monolayer formation and its modification of the electrodes are investigated via infrared reflection absorption spectroscopy, contact angle measurements, and photoelectron spectroscopy. The WF decrease of ITO correlates with increasing molecular dipoles. The lowest ever recorded WF of 3.7 eV is achieved with the fluorinated biphenylphosphonic acid.

Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

NASA Astrophysics Data System (ADS)

Li, Yali; Li, Chunyang; He, Deyan; Li, Junshuai

2009-05-01

We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ~4.6 × 10-4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ~1.21 × 1021 cm-3 and a lower mobility of ~11.4 cm2 V-1 s-1. More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

Design and development of plasmonic nanostructured electrodes for ITO-free organic photovoltaic cells on rigid and highly flexible substrates

NASA Astrophysics Data System (ADS)

Richardson, Beau J.; Zhu, Leize; Yu, Qiuming

2017-04-01

Indium tin oxide (ITO) is the most common transparent electrode used in organic photovoltaics (OPVs), yet limited indium reserves and poor mechanical properties make it non-ideal for large-scale OPV production. To replace ITO, we designed, fabricated, and deployed plasmonic nanostructured electrodes in inverted OPV devices. We found that active layer absorption is significantly impacted by ZnO thickness which affects the optical field distribution inside the resonant cavity formed between the plasmonic nanostructured electrode and top electrode. High quality Cr/Au nanostructured electrodes were fabricated by nanoimprint lithography and deployed in ITO-free inverted devices on glass. Devices with thinner ZnO showed a PCE as high as 5.70% and higher J SC’s than devices on thicker ZnO, in agreement with finite-difference time-domain simulations. In addition, as the active layer was made optically thin, ITO-based devices showed diminished J SC while the resonant cavity effect from plasmonic nanostructured electrodes retained J SC. Preliminary ITO-free, flexible devices on PET showed a PCE of 1.82% and those fabricated on ultrathin and conformable Parylene substrates yielded an initial PCE over 1%. The plasmonic electrodes and device designs in this work show promise for developing highly functioning conformable devices that can be applied to numerous needs for lightweight, ubiquitous power generation.

Polypyrrole nanostructures and their field emission investigations

NASA Astrophysics Data System (ADS)

Harpale, Kashmira; More, Mahendra A.; Koinkar, Pankaj M.; Patil, Sandip S.; Sonawane, Kishor M.

2015-03-01

Polypyrrole (PPy) nanostructures have been synthesized on indium doped tin oxide (ITO) substrates by a facile electrochemical route employing cyclic voltammetry (CV) mode. The morphology of the PPy thin films was observed to be influenced by the monomer concentration. Furthermore, FTIR revealed formation of electrically conducting state of PPy. Field emission investigations of the PPy nanostructures were carried out at base pressure of 1×10-8mbar. The values of turn-on field, corresponding to emission current density of 1 μA/cm2 were observed to be 0.6, 1.0 and 1.2 V/μm for the PPy films characterized with rod-like, cauliflower and granular morphology, respectively. In case of PPy nanorods maximum current density of 1.2 mA/cm2 has been drawn at electric field of 1 V/μm. The low turn on field, extraction of very high emission current density at relatively lower applied field and good emission stability propose the PPy nanorods as a promising material for field emission based devices.

Simultaneous dynamic optical and electrical properties of endothelial cell attachment on indium tin oxide bioelectrodes.

PubMed

Choi, Chang K; English, Anthony E; Kihm, Kenneth D; Margraves, Charles H

2007-01-01

This study quantifies the dynamic attachment and spreading of porcine pulmonary artery endothelial cells (PPAECs) on optically thin, indium tin oxide (ITO) biosensors using simultaneous differential interference contrast microscopy (DICM) and electrical microimpedance spectroscopy. A lock-in amplifier circuit monitored the impedance of PPAECs cultivated on the transparent ITO bioelectrodes as a function of frequency between 10 Hz and 100 kHz and as a function of time, while DICM images were simultaneously acquired. A digital image processing algorithm quantified the cell-covered electrode area as a function of time. The results of this study show that the fraction of the cell-covered electrode area is in qualitative agreement with the electrical impedance during the attachment phase following the cell settling on the electrode surface. The possibility of several distinctly different states of electrode coverage and cellular attachment giving rise to similar impedance signals is discussed.

Materials flow of indium in the United States in 2008 and 2009

USGS Publications Warehouse

Goonan, Thomas G.

2012-01-01

Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

Effects of Concentration of Nanoscale Tin-Doped Indium Oxide on Electrical Breakdown of High-Resistance Liquid Crystal

NASA Astrophysics Data System (ADS)

Liang, Bau-Jy; Liu, Don-Gey; Chang, Chih-Yuan; Shie, Wun-Yi

2011-05-01

According to our previous study, a high concentration of nanoscale tin-doped indium oxide (ITO) may be beneficial for protecting liquid crystal (LC) against attacks by electrostatic discharge (ESD). In this study, the influence of high-voltage stresses in an ESD test was investigated for cells doped with different concentrations of ITO. It was found that nano-ITO with a concentration of 0.4% in weight ratio deteriorated the physical properties of LC of transparency transition and charge retention. However, our experiment showed that the capability of ESD protection for the doped LC was still improved at the ITO concentration of 0.4 wt %. This finding supports the proposed model in our previous report. The role of ITO in the LC is not always beneficial, as discussed in this paper.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances

NASA Astrophysics Data System (ADS)

Zhang, Zhuo; Choi, Mingi; Baek, Minki; Yong, Kijung

2015-05-01

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances.

PubMed

Zhang, Zhuo; Choi, Mingi; Baek, Minki; Yong, Kijung

2015-05-21

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dong-Ho; Park, Jin-Hong, E-mail: jhpark9@skku.edu

Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smallermore » than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.« less

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

NASA Astrophysics Data System (ADS)

Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

2016-06-01

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

NASA Astrophysics Data System (ADS)

Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

2018-04-01

Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

Chlorinated indium tin oxide electrode by InCl{sub 3} aqueous solution for high-performance organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Yun; Wang, Bo; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn

2016-04-11

The authors develop a facile and effective method to produce the chlorinated indium tin oxide (Cl-ITO) treated by InCl{sub 3} aqueous solution and UV/ozone. The work function of the Cl-ITO achieved by this treatment is as high as 5.69 eV, which is increased by 1.09 eV compared with that of the regular ITO without any treatment. Further investigation proved that the enhancement of the work function is attributed to the formation of In-Cl bonds on the Cl-ITO surface. Green phosphorescent organic light-emitting devices based on the Cl-ITO electrodes exhibit excellent electroluminescence performance, elongating lifetime due to the improvement in hole injection.

Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

NASA Astrophysics Data System (ADS)

Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

2018-06-01

In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pruna, R., E-mail: rpruna@el.ub.edu; Palacio, F.; López, M.

2016-08-08

The electroactivity of nanostructured indium tin oxide (ITO) has been investigated for its further use in applications such as sensing biological compounds by the analysis of redox active molecules. ITO films were fabricated by using electron beam evaporation at different substrate temperatures and subsequently annealed for promoting their crystallization. The morphology of the deposited material was monitored by scanning electron microscopy, confirming the deposition of either thin films or nanowires, depending on the substrate temperature. Electrochemical surface characterization revealed a 45 % increase in the electroactive surface area of nanostructured ITO with respect to thin films, one third lower than themore » geometrical surface area variation determined by atomic force microscopy. ITO surfaces were functionalized with a model organic molecule known as 6-(ferrocenyl)hexanethiol. The chemical attachment was done by means of a glycidoxy compound containing a reactive epoxy group, the so-called 3-glycidoxypropyltrimethoxy-silane. ITO functionalization was useful for determining the benefits of nanostructuration on the surface coverage of active molecules. Compared to ITO thin films, an increase in the total peak height of 140 % was observed for as-deposited nanostructured electrodes, whereas the same measurement for annealed electrodes resulted in an increase of more than 400 %. These preliminary results demonstrate the ability of nanostructured ITO to increase the surface-to-volume ratio, conductivity and surface area functionalization, features that highly benefit the performance of biosensors.« less

Anti-reflective coating with a conductive indium tin oxide layer on flexible glass substrates.

PubMed

Sung, Yilin; Malay, Robert E; Wen, Xin; Bezama, Christian N; Soman, Varun V; Huang, Ming-Huang; Garner, Sean M; Poliks, Mark D; Klotzkin, David

2018-03-20

Flexible glass has many applications including photovoltaics, organic light-emitting device (OLED) lighting, and displays. Its ability to be processed in a roll-to-roll facility enables high-throughput continuous manufacturing compared to conventional glass processing. For photovoltaic, OLED lighting, and display applications, transparent conductors are required with minimal optical reflection losses. Here, we demonstrate an anti-reflective coating (ARC) that incorporates a useful transparent conductor that is realizable on flexible substrates. This reduces the average reflectivity to less than 6% over the visible band from normal incidence to incident angles up to 60°. This ARC is designed by the average uniform algorithm method. The coating materials consist of a multilayer stack of an electrically functional conductive indium tin oxide with conductivity 2.95×10 5   Siemens/m (31 Ω/□), and AlSiO 2 . The coatings showed modest changes in reflectivity and no delamination after 10,000 bending cycles. This demonstrates that effective conductive layers can be integrated into ARCs and can be realized on flexible glass substrates with proper design and process control.

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Park, Jinhee; Rim, You Seung; Li, Chao; Wu, Jiechen; Goorsky, Mark; Streit, Dwight

2018-04-01

We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function of oxygen ratio [O2/(Ar + O2)] during growth. Increasing the oxygen ratio enhanced the incorporation of oxygen during ITZO film growth and reduced the concentration of deep-level defects associated with oxygen vacancies. Under illumination with no bias stress, device stability and persistent photocurrent were improved with increased oxygen ratio. Bias stress tests of the devices were also performed with and without illumination. While high oxygen ratio growth conditions resulted in decreased deep-level oxygen vacancies in the ITZO material, the same conditions resulted in degradation of the interfacial layer between the ITZO channel and dielectric due to the migration of energetic oxygen ions to the interface. Therefore, when bias stress was applied, increased carrier trap density at the interface led to a decrease in device stability that offsets any improvement in the material itself. In order to take advantage of the improved ITZO material growth at a high oxygen ratio, the interface-related problems must be solved.

Optical waveguide and room temperature high-quality nanolasers from tin-catalyzed CdSSe nanostructures

NASA Astrophysics Data System (ADS)

Guo, Pengfei; Shen, Xia; Zhang, Baolong; Sun, Haibin; Zou, Zhijun; Yang, Wenchao; Gong, Ke; Luo, Yongsong

2018-05-01

A simple two-step CVD method is developed to realize the growth of high-quality tin-catalyzed CdSSe alloy nanowires. Microstructural characterizations demonstrate that these wires are high-quality crystalline nanostructures. Local photoluminescence investigation of these nanostructures shows a typical band edge emission at 656 nm with a full-width at half-maximum of 22.3 nm. Optical waveguide measurement along an individual nanowire indicates that the output signal of the guided light has a rapid linear decrease accompanied with maximum red-shift about 109 meV after the transmission of 102 μm. This obvious red-shift is caused by the intensive band-tail absorption during the optical transmission process. Moreover, optically pumped nanolasers are successfully realized at room temperature based on these unique wires, further demonstrating the achievement of stimulated emission from spontaneous emission, promoted by the pump power intensity. This work may find a simple route to the manufacture of superior nanowires for applications in waveguide and integrated photonic devices.

Optical waveguide and room temperature high-quality nanolasers from tin-catalyzed CdSSe nanostructures.

PubMed

Guo, Pengfei; Shen, Xia; Zhang, Baolong; Sun, Haibin; Zou, Zhijun; Yang, Wenchao; Gong, Ke; Luo, Yongsong

2018-05-04

A simple two-step CVD method is developed to realize the growth of high-quality tin-catalyzed CdSSe alloy nanowires. Microstructural characterizations demonstrate that these wires are high-quality crystalline nanostructures. Local photoluminescence investigation of these nanostructures shows a typical band edge emission at 656 nm with a full-width at half-maximum of 22.3 nm. Optical waveguide measurement along an individual nanowire indicates that the output signal of the guided light has a rapid linear decrease accompanied with maximum red-shift about 109 meV after the transmission of 102 μm. This obvious red-shift is caused by the intensive band-tail absorption during the optical transmission process. Moreover, optically pumped nanolasers are successfully realized at room temperature based on these unique wires, further demonstrating the achievement of stimulated emission from spontaneous emission, promoted by the pump power intensity. This work may find a simple route to the manufacture of superior nanowires for applications in waveguide and integrated photonic devices.

Micro-scale patterning of indium tin oxide film by spatially modulated pulsed Nd:YAG laser beam

NASA Astrophysics Data System (ADS)

Lee, Jinsoo; Kim, Seongsu; Lee, Myeongkyu

2012-09-01

Here we demonstrate that indium tin oxide (ITO) films deposited on glass can be directly patterned by a spatially -modulated pulsed Nd-YAG laser beam (wavelength = 1064 nm, pulse width = 6 ns) incident onto the film. This method utilizes a pulsed laser-induced thermo-elastic force exerting on the film which plays a role to detach it from the substrate. Sharp-edged clean patterns with feature size as small as 4 μm could be obtained. The threshold pulse energy density for patterning was estimated to be ˜0.8 J/cm2 for 150 nm-thick ITO film, making it possible to pattern over one square centimeter by a single pulse with energy of 850 mJ. Not only being free from photoresist and chemical etching steps, the presented method can also provide much higher throughput than the tradition photoablation process utilizing a tightly focused beam.

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Fully printable transparent monolithic solid-state dye-sensitized solar cell with mesoscopic indium tin oxide counter electrode.

PubMed

Yang, Ying; Ri, Kwangho; Rong, Yaoguang; Liu, Linfeng; Liu, Tongfa; Hu, Min; Li, Xiong; Han, Hongwei

2014-09-07

We present a new transparent monolithic mesoscopic solid-state dye-sensitized solar cell based on trilamellar films of mesoscopic TiO2 nanocrystalline photoanode, a ZrO2 insulating layer and an indium tin oxide counter electrode (ITO-CE), which were screen-printed layer by layer on a single substrate. When the thickness of the ITO-CE was optimized to 2.1 μm, this very simple and fully printable solid-state DSSC with D102 dye and spiro-OMeTAD hole transport materials presents efficiencies of 1.73% when irradiated from the front side and 1.06% when irradiated from the rear side under a standard simulated sunlight condition (AM 1.5 Global, 100 mW cm(-2)). Higher parameters could be expected with a better transparent mesoscopic counter electrode and hole conductor for the printable monolithic mesoscopic solid-state DSSC.

Design for approaching Cicada-wing reflectance in low- and high-index biomimetic nanostructures.

PubMed

Huang, Yi-Fan; Jen, Yi-Jun; Chen, Li-Chyong; Chen, Kuei-Hsien; Chattopadhyay, Surojit

2015-01-27

Natural nanostructures in low refractive index Cicada wings demonstrate ≤ 1% reflectance over the visible spectrum. We provide design parameters for Cicada-wing-inspired nanotip arrays as efficient light harvesters over a 300-1000 nm spectrum and up to 60° angle of incidence in both low-index, such as silica and indium tin oxide, and high-index, such as silicon and germanium, photovoltaic materials. Biomimicry of the Cicada wing design, demonstrating gradient index, onto these material surfaces, either by real electron cyclotron resonance microwave plasma processing or by modeling, was carried out to achieve a target reflectance of ∼ 1%. Design parameters of spacing/wavelength and length/spacing fitted into a finite difference time domain model could simulate the experimental reflectance values observed in real silicon and germanium or in model silica and indium tin oxide nanotip arrays. A theoretical mapping of the length/spacing and spacing/wavelength space over varied refractive index materials predicts that lengths of ∼ 1.5 μm and spacings of ∼ 200 nm in high-index and lengths of ∼ 200-600 nm and spacings of ∼ 100-400 nm in low-index materials would exhibit ≤ 1% target reflectance and ∼ 99% optical absorption over the entire UV-vis region and angle of incidence up to 60°.

AFM, CLSM and EIS characterization of the immobilization of antibodies on indium-tin oxide electrode and their capture of Legionella pneumophila.

PubMed

Souiri, Mina; Blel, Nesrine; Sboui, Dejla; Mhamdi, Lotfi; Epalle, Thibaut; Mzoughi, Ridha; Riffard, Serge; Othmane, Ali

2014-01-01

The microscopic surface molecular structures and properties of monoclonal anti-Legionella pneumophila antibodies on an indium-tin oxide (ITO) electrode surface were studied to elaborate an electrochemical immunosensor for Legionella pneumophila detection. A monoclonal anti-Legionella pneumophila antibody (MAb) has been immobilized onto an ITO electrode via covalent chemical bonds between antibodies amino-group and the ring of (3-Glycidoxypropyl) trimethoxysilane (GPTMS). The functionalization of the immunosensor was characterized by atomic force microscopy (AFM), water contact angle measurement, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) in the presence of [Fe(CN)₆](3-/4-) as a redox probe. Specific binding of Legionella pneumophila sgp 1 cells onto the antibody-modified ITO electrode was shown by confocal laser scanning microscopy (CLSM) imaging and EIS. AFM images evidenced the dense and relatively homogeneous morphology on the ITO surface. The formation of the complex epoxysilane-antibodies acting as barriers for the electron transfer between the electrode surface and the redox species in the solution induced a significant increase in the charge transfer resistance (Rct) compared to all the electric elements. A linear relationship between the change in charge transfer resistance (ΔRct=Rct after immunoreactions - Rct control) and the logarithmic concentration value of L. pneumophila was observed in the range of 5 × 10(1)-5 × 10(4) CFU mL(-1) with a limit of detection 5 × 10(1)CFU mL(-1). The present study has demonstrated the successful deposition of an anti-L. pneumophila antibodies on an indium-tin oxide surface, opening its subsequent use as immuno-captor for the specific detection of L. pneumophila in environmental samples. © 2013 Elsevier B.V. All rights reserved.

Status of indium phosphide solar cell development at Spire

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

1987-01-01

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

2012-02-01

The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

Confocal filtering in cathodoluminescence microscopy of nanostructures

NASA Astrophysics Data System (ADS)

Narváez, Angela C.; Weppelman, I. Gerward C.; Moerland, Robert J.; Hoogenboom, Jacob P.; Kruit, Pieter

2014-06-01

Cathodoluminescence (CL) microscopy allows optical characterization of nanostructures at high spatial resolution. At the nanoscale, a main challenge of the technique is related to the background CL generated within the sample substrate. Here, we implement confocal detection of the CL signal to minimize the background contribution to the measurement. Nano-phosphors were used as point sources to evaluate the filtering capabilities of our confocal CL system, obtaining an axial intensity profile with 2.7 μm full width at half maximum for the central peak, in good correspondence with theoretical expectations. Considering the electron interaction volume, we found that the confocal filter becomes effective for electron energies above 20 keV, when using a 25 μm pinhole (0.86 Airy units). To illustrate our approach, we present confocal CL imaging of gold nanowires and triangular shaped plates deposited on an indium-tin oxide covered glass substrate, comparing the images with those obtained in standard unfiltered CL detection. The results show that confocal CL microscopy is a valuable tool for the investigation of nanostructures on highly cathodoluminescent substrates, widely used in biological and optical applications.

Confocal filtering in cathodoluminescence microscopy of nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Narváez, Angela C., E-mail: a.c.narvaez@tudelft.nl, E-mail: j.p.hoogenboom@tudelft.nl; Weppelman, I. Gerward C.; Moerland, Robert J.

2014-06-23

Cathodoluminescence (CL) microscopy allows optical characterization of nanostructures at high spatial resolution. At the nanoscale, a main challenge of the technique is related to the background CL generated within the sample substrate. Here, we implement confocal detection of the CL signal to minimize the background contribution to the measurement. Nano-phosphors were used as point sources to evaluate the filtering capabilities of our confocal CL system, obtaining an axial intensity profile with 2.7 μm full width at half maximum for the central peak, in good correspondence with theoretical expectations. Considering the electron interaction volume, we found that the confocal filter becomes effectivemore » for electron energies above 20 keV, when using a 25 μm pinhole (0.86 Airy units). To illustrate our approach, we present confocal CL imaging of gold nanowires and triangular shaped plates deposited on an indium-tin oxide covered glass substrate, comparing the images with those obtained in standard unfiltered CL detection. The results show that confocal CL microscopy is a valuable tool for the investigation of nanostructures on highly cathodoluminescent substrates, widely used in biological and optical applications.« less

Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity

NASA Astrophysics Data System (ADS)

Losurdo, M.; Giangregorio, M.; Capezzuto, P.; Bruno, G.; de Rosa, R.; Roca, F.; Summonte, C.; Plá, J.; Rizzoli, R.

2002-01-01

Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.

Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

PubMed

Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

2017-11-16

Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

NASA Astrophysics Data System (ADS)

Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

2018-01-01

In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Fabrication of nanostructure by physical vapor deposition with glancing angle deposition technique and its applications

NASA Astrophysics Data System (ADS)

Horprathum, M.; Eiamchai, P.; Kaewkhao, J.; Chananonnawathorn, C.; Patthanasettakul, V.; Limwichean, S.; Nuntawong, N.; Chindaudom, P.

2014-09-01

A nanostructural thin film is one of the highly exploiting research areas particularly in applications in sensor, photocatalytic, and solar-cell technologies. In the past two decades, the integration of glancing-angle deposition (GLAD) technique to physical vapor deposition (PVD) process has gained significant attention for well-controlled multidimensional nanomorphologies because of fast, simple, cost-effective, and mass-production capability. The performance and functional properties of the coated thin films generally depend upon their nanostructural compositions, i.e., large aspect ratio, controllable porosity, and shape. Such structural platforms make the fabricated thin films very practical for several realistic applications. We therefore present morphological and nanostructural properties of various deposited materials, which included metals, i.e., silver (Ag), and oxide compounds, i.e., tungsten oxide (WO3), titanium dioxide (TiO2), and indium tin oxide (ITO). Different PVD techniques based on DC magnetron sputtering and electron-beam evaporation, both with the integrated GLAD component, were discussed. We further explore engineered nanostructures which enable controls of optical, electrical, and mechanical properties. These improvements led to several practical applications in surface-enhanced Raman, smart windows, gas sensors, self-cleaning materials and transparent conductive oxides (TCO).

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Effect of substrates on structural and optical properties of tin oxide (SnO2) nanostructures.

PubMed

Johari, Anima; Bhatnagar, M C; Rana, Vikas

2012-10-01

We report on controlling the morphology of tin oxide (SnO2) nanostructures and the study of the effect of surface morphology on structural and optical properties of SnO2 nanostuctures. In present work, Tin oxide (SnO2) nanostructures such as nanowires and nanorods have been grown by thermal evaporation of SnO2 powder. To demonstrate the effect of different substrates on the morphology of grown SnO2 nanostructures, the thermal evaporation of SnO2 powder was carried out on Si and gold catalyzed Si (Au/Si) substrates. The scanning-electron-microscopic analysis shows the growth of SnO2 nanowires on Au/Si substrate and growth of SnO2 nanorods on Si substrate. The scanning-and transmission-electron-microscopic analysis shows that the diameter of SnO2 nanowires and nanorods are about 70 nm and 95 nm respectively and their length is about 80 microm and 30 microm respectively. The vapor-liquid-solid (VLS) growth of SnO2 nanowires and vapor-solid (VS) growth of SnO2 nanorods is also confirmed with the help of TEM and EDX spectra. The synthesized SnO2 nanowires show tetragonal rutile structure of SnO2, whereas SnO2 nanorods show tetragonal rutile as well as cassiterite structure of SnO2. UV-Vis absorption spectra showed the optical band gaps of 4.1 eV and 3.8 eV for the SnO2 nanowires and the nanorods, respectively. The SnO2 nanowires and nanorods show photoluminescence with broad emission peaks centred at around 600 nm and 580 nm respectively. Raman spectra of SnO2 nanowires shows three Raman shifts (478, 632, 773 cm(-1)) corresponding to Eg, A1g and B2g vibration modes, whereas in Raman spectra of SnO2 nanorods, A1g peak is dramatically reduced and the B2g mode is totally quenched.

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

PubMed

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Indium-tin-oxide nanowhiskers crystalline silicon photovoltaics combining micro- and nano-scale surface textures

NASA Astrophysics Data System (ADS)

Chang, C. H.; Hsu, M. H.; Chang, W. L.; Sun, W. C.; Yu, Peichen

2011-02-01

In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The combined surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on passivated, micro-grooved silicon solar cells using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared, which is optically equivalent to a stack of two dielectric thin-films with step- and graded- refractive index profiles. The ITO nanowhiskers provide broadband anti-reflective properties (R<5%) in the wavelength range of 350-1100nm. In comparison with conventional Si solar cell, the combined surface texture solar cell shows higher external quantum efficiency (EQE) in the range of 700-1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). Furthermore, the nano-whiskers also provide strong forward scattering for ultraviolet and visible light, favorable in thin-wafer silicon photovoltaics to increase the optical absorption path.

Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

NASA Astrophysics Data System (ADS)

Deshpande, N. G.; Gudage, Y. G.; Ghosh, A.; Vyas, J. C.; Singh, F.; Tripathi, A.; Sharma, Ramphal

2008-02-01

We have examined the effect of swift heavy ions using 100 MeV Au8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 × 10-4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

PubMed

Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

2013-07-10

We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.

Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Das, Rupali; Soni, R. K.

2018-05-01

Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

Advantages of indium-tin oxide-coated glass slides in correlative scanning electron microscopy applications of uncoated cultured cells.

PubMed

Pluk, H; Stokes, D J; Lich, B; Wieringa, B; Fransen, J

2009-03-01

A method of direct visualization by correlative scanning electron microscopy (SEM) and fluorescence light microscopy of cell structures of tissue cultured cells grown on conductive glass slides is described. We show that by growing cells on indium-tin oxide (ITO)-coated glass slides, secondary electron (SE) and backscatter electron (BSE) images of uncoated cells can be obtained in high-vacuum SEM without charging artefacts. Interestingly, we observed that BSE imaging is influenced by both accelerating voltage and ITO coating thickness. By combining SE and BSE imaging with fluorescence light microscopy imaging, we were able to reveal detailed features of actin cytoskeletal and mitochondrial structures in mouse embryonic fibroblasts. We propose that the application of ITO glass as a substrate for cell culture can easily be extended and offers new opportunities for correlative light and electron microscopy studies of adherently growing cells.

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for themore » performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.« less

Fabrication of flexible silver nanowire conductive films and transmittance improvement based on moth-eye nanostructure array

NASA Astrophysics Data System (ADS)

Zhang, Chengpeng; Zhu, Yuwen; Yi, Peiyun; Peng, Linfa; Lai, Xinmin

2017-07-01

Transparent conductive electrodes (TCEs) are widely used in optoelectronic devices, such as touch screens, liquid-crystal displays and light-emitting diodes. To date, the material of the most commonly used TCEs was indium-tin oxide (ITO), which had several intrinsic drawbacks that limited its applications in the long term, including relatively high material cost and brittleness. Silver nanowire (AgNW), as one of the alternative materials for ITO TCEs, has already gained much attention all over the world. In this paper, we reported a facile method to greatly enhance the transmittance of the AgNW TCEs without reducing the electrical conductivity based on moth-eye nanostructures, and the moth-eye nanostructures were fabricated by using a roll-to-roll ultraviolet nanoimprint lithography process. Besides, the effects of mechanical pressure and bending on the moth-eye nanostructure layer were also investigated. In the research, the optical transmittance of the flexible AgNW TCEs was enhanced from 81.3% to 86.0% by attaching moth-eye nanostructures onto the other side of the flexible polyethylene terephthalate substrate while the electrical conductivity of the AgNW TCEs was not sacrificed. This research can provide a direction for the cost-effective fabrication of moth-eye nanostructures and the transmittance improvement of the flexible transparent electrodes.

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Min; Xiao, Teng; Liu, Rui

2011-10-11

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDsmore » with strongly improved device performance.« less

Write once read many memory device from Tris-8 (-hydroxyquinoline) aluminum and Indium tin oxide nano particles

NASA Astrophysics Data System (ADS)

Aneesh, J.; Predeep, P.

2011-10-01

Consequent to the fast increase in data storage requirements new materials and device structures are explored in a war footing. Organic memory devices are attracting lot of interest among the researchers and are becoming a hot topic of investigations. This study is an attempt to develop a tri-layer organic memory device using indium tin oxide (ITO) nanoparticles as charge trapping middle layer between tris-8(-hydroxyquinoline)aluminum (Alq3) layers employing spin coating technique. Device switching is studied by applying a current-voltage (I-V) sweep. On increasing the applied bias the device switched from the initial high resistance (OFF) state to a low resistance (ON) state at a switch on voltage of around 4 V. ON/OFF ratio is of the order of 100 at a read voltage of 2 V. The device is found to remain in the low resistance state on further scans, showing the applicability of this device as a write once read many times (WORM) memory.

Room Temperature Ferromagnetism of Fe Doped Indium Tin Oxide Based on Dispersed Fe3O4 Nanoparticles

NASA Astrophysics Data System (ADS)

Okada, Koichi; Kohiki, Shigemi; Nishi, Sachio; Shimooka, Hirokazu; Deguchi, Hiroyuki; Mitome, Masanori; Bando, Yoshio; Shishido, Toetsu

2007-09-01

Transmission electron microscopy revealed that Fe3O4 nanoparticles with diameter of ≈200 nm dispersed in Fe doped indium tin oxide (Fe@ITO) powders exhibiting co-occurrence of room temperature ferromagnetism and superparamagnetism. Although we observed no X-ray diffraction peak from Fe related compounds for Fe0.19@ITO (ITO: In1.9Sn0.1O3) powders, the powders showed both hysteresis loop in field dependent magnetization at 300 K and divergence of zero-field-cooled magnetization from field-cooled magnetization. Scanning transmission electron microscopy with energy dispersive X-ray spectroscopy demonstrated that the nanoparticle with diameter of ≈200 nm consists of Fe and oxygen. Transmission electron diffraction revealed that crystal structure of the nanoparticle is inverse spinel type Fe3O4. The Fe3O4 crystalline phase by electron diffraction is consistent with the saturation magnetization of 1.3 μB/Fe and magnetic anomaly at ≈110 K observed for the powders.

Investigation of the poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]/indium tin oxide interface using photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Lägel, B.; Beerbom, M. M.; Doran, B. V.; Lägel, M.; Cascio, A.; Schlaf, R.

2005-07-01

The interface between the luminescent polymer poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and sputter-cleaned indium tin oxide (ITO) was investigated using photoemission spectroscopy in combination with in situ thin film deposition. MEH-PPV was deposited in high vacuum directly from toluene solution on the ITO substrate using a home-built electrospray thin-film deposition system. The deposition was carried out in multiple steps without breaking the vacuum. In between deposition steps the sample was characterized with x-ray and ultraviolet photoemission spectroscopy. The evaluation of the spectra sequence allowed the determination of the orbital lineup (charge injection barriers) at the interface, as well as the MEH-PPV growth mode at the interface.

Preparation of indium tin oxide contact to n-CdZnTe gamma-ray detector

NASA Astrophysics Data System (ADS)

Li, Leqi; Xu, Yadong; Zhang, Binbin; Wang, Aoqiu; Dong, Jiangpeng; Yu, Hui; Jie, Wanqi

2018-03-01

The nonmetal electrode material Indium Tin Oxide (ITO) has advantages of excellent conductivity, higher adhesion, and interface stability, showing potential to replace the metallic contacts for fabrication of CdZnTe (CZT) X/γ-ray detectors. In this work, high quality ITO electrodes for n-type CZT crystals were prepared by magnetron sputtering under a sputtering power of 75 W and a sputtering pressure of 0.6 Pa. A low dark current of ˜1 nA is achieved for the 5 × 5 × 2 mm3 ITO/CZT/ITO planar device under 100 V bias. The characteristics of Schottky contact are presented in the room temperature I-V curves, which are similar to those of the Au contact detectors. Based on the thermoelectric emission theory, the contact barrier and resistance of ITO electrodes are evaluated to be 0.902-0.939 eV and 0.87-3.56 × 108 Ω, respectively, which are consistent with the values of the Au electrodes. The ITO/CZT/ITO structure detector exhibits a superior energy resolution of 6.5% illuminated by the uncollimated 241Am @59.5 keV γ-ray source, which is comparable to the CZT detector with Au electrodes.

3D indium tin oxide electrodes by ultrasonic spray deposition for current collection applications

NASA Astrophysics Data System (ADS)

van den Ham, E. J.; Elen, K.; Bonneux, G.; Maino, G.; Notten, P. H. L.; Van Bael, M. K.; Hardy, A.

2017-04-01

Three dimensionally (3D) structured indium tin oxide (ITO) thin films are synthesized and characterized as a 3D electrode material for current collection applications. Using metal citrate chemistry in combination with ultrasonic spray deposition, a low cost wet-chemical method has been developed to achieve conformal ITO coatings on non-planar scaffolds. Although there is room for improvement with respect to the resistivity (9.9·10-3 Ω•cm, 220 nm thick planar films), high quality 3D structured coatings were shown to exhibit conductive properties based on ferrocene reactivity. In view of applications in Li-ion batteries, the electrochemical stability of the current collector was investigated, indicating that stability is guaranteed for voltages of 1.5 V and up (vs. Li+/Li). In addition, subsequent 3D coating of the ITO with WO3 as a negative electrode (battery) material confirmed the 3D ITO layer functions as a proper current collector. Using this approach, an over 4-fold capacity increase was booked for 3D structured WO3 in comparison to planar samples, confirming the current collecting capabilities of the 3D ITO coating. Therefore, the 3D ITO presented is considered as a highly interesting material for 3D battery applications and beyond.

Nanostructured zinc oxide platform for mycotoxin detection.

PubMed

Ansari, Anees A; Kaushik, Ajeet; Solanki, Pratima R; Malhotra, B D

2010-02-01

Nanostructured zinc oxide (Nano-ZnO) film has been deposited onto indium-tin-oxide (ITO) glass plate for co-immobilization of rabbit-immunoglubin antibodies (r-IgGs) and bovine serum albumin (BSA) for ochratoxin-A (OTA) detection. The results of X-ray diffraction (XRD) studies reveal the formation of Nano-ZnO with average particle size as ~5.0nm. Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), electrochemical impedance spectroscopy (EIS) techniques have been used to characterize Nano-ZnO/ITO electrode and BSA/r-IgGs/Nano-ZnO/ITO immunoelectrode. Electrochemical impedimetric response of BSA/r-IgGs/Nano-ZnO/ITO immunoelectrode obtained as a function of OTA concentration exhibits linearity as 0.006-0.01nM/dm(3), detection limit of 0.006nM/dm(3), response time as 25s and sensitivity of 189Omega/nM/dm(3)cm(-2) with a regression coefficient of 0.997. 2009 Elsevier B.V. All rights reserved.

Effective properties of undoped and Indium3+-doped tin manganese telluride (Sn1 - xMnxTe) nanoparticles via using a chemical bath deposition route

NASA Astrophysics Data System (ADS)

Boon-on, Patsorn; Tubtimtae, Auttasit; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab

2017-06-01

Tin manganese telluride nanoparticles (Sn1-xMnxTe NPs) were first synthesized on a niobium pentoxide (Nb2O5) film using a chemical bath deposition (CBD) route. An individual particle size before and after indium (In3+) doping of ∼70-150 nm was investigated with stoichiometric formation of the SnMnTe phase. Furthermore, a cubic or rocksalt structure of the Sn0.938Mn0.062Te phase was also kept incorporated in the structure. The plotted energy band gaps for undoped and In3+-doped samples were 2.17 and 1.83 eV, respectively. The reduction of photoluminescence (PL) spectra after In3+ doping, while the indium dopant acted as a trap state incorporated in Sn1-xMnxTe NPs, showed enhanced charge separation and reduced charge recombination, which resulted in a higher charge density trapped in the conduction band of Nb2O5 and was also confirmed by the result of anodic peaks in the cyclic voltammetry. These results suggest new possibilities in optoelectronic and electrochemical devices.

Controlling the size of gold nanoparticles grown on indium tin oxide substrates prepared by seed mediated growth method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fauzia, Vivi, E-mail: vivi@sci.ui.ac.id; Pratiwi, Nur Intan; Adela, Faiz

One of the unique optical properties of gold nanoparticles is the enhanced absorption and scattering light around metal nanoparticles commonly called the Localized Surface Plasmon Resonance (LSPR) effect of gold nanoparticles. This property is determined by the shape and size of gold nanoparticles. In this work, we observed the role of three materials used in synthesis process on the morphology and the LSPR effect of gold nanoparticles. The gold nanoparticles were directly grown on indium tin oxide (ITO) coated glass substrates using the seed mediated growth method with three different concentrations of trisodium citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}), C{submore » 16}TAB and ascorbic acid (C{sub 6}H{sub 8}O{sub 6}). Based on the FESEM image and optical absorption spectrum of gold nanoparticles, it was found that the higher concentration of those materials has decreased the size of gold nananoparticles and shifted the LSPR peaks to lower wavelength.« less

Coupling mediated by photorefractive phase grating between visible radiation and surface plasmon polaritons in iron-doped LiNbO3 crystal slabs coated with indium-tin oxide

NASA Astrophysics Data System (ADS)

Wang, Hao; Zhao, Hua; Xu, Chao; Li, Liang; Hu, Guangwei; Zhang, Jingwen

2014-10-01

Photorefractive (PR) phase gratings were used in coupling energy between visible light and surface plasmon polaritons in indium-tin oxide (ITO)-coated iron-doped lithium niobate (Fe:LN) crystal slabs via electrostatic modification at the ITO/LN interface based on a strong photovoltaic effect. The energy coupling is considered to be responsible for several interesting observations: (1) dynamic reflectivity change from 3.25 to 37.0% of the very first reflection at the entrance slab interface, (2) total light reflectivity as high as 89%, and (3) two-dimensional diffraction patterns without external feedback needed.

Size-dependent electronic structure controls activity for ethanol electro-oxidation at Ptn/indium tin oxide (n = 1 to 14).

PubMed

von Weber, Alexander; Baxter, Eric T; Proch, Sebastian; Kane, Matthew D; Rosenfelder, Michael; White, Henry S; Anderson, Scott L

2015-07-21

Understanding the factors that control electrochemical catalysis is essential to improving performance. We report a study of electrocatalytic ethanol oxidation - a process important for direct ethanol fuel cells - over size-selected Pt centers ranging from single atoms to Pt14. Model electrodes were prepared by soft-landing of mass-selected Ptn(+) on indium tin oxide (ITO) supports in ultrahigh vacuum, and transferred to an in situ electrochemical cell without exposure to air. Each electrode had identical Pt coverage, and differed only in the size of Pt clusters deposited. The small Ptn have activities that vary strongly, and non-monotonically with deposited size. Activity per gram Pt ranges up to ten times higher than that of 5 to 10 nm Pt particles dispersed on ITO. Activity is anti-correlated with the Pt 4d core orbital binding energy, indicating that electron rich clusters are essential for high activity.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

2014-10-01

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

Performance optimization of AlGaN-based LEDs by use of ultraviolet-transparent indium tin oxide: Effect of in situ contact treatment

NASA Astrophysics Data System (ADS)

Tu, Wenbin; Chen, Zimin; Zhuo, Yi; Li, Zeqi; Ma, Xuejin; Wang, Gang

2018-05-01

Ultraviolet (UV)-transparent indium tin oxide (ITO) grown by metal–organic chemical vapor deposition (MOCVD) is used as the current-spreading layer for 368 nm AlGaN-based light-emitting diodes (LEDs). By performing in situ contact treatment on the LED/ITO interface, the morphology, resistivity, and contact resistance of electrodes become controllable. Resistivity of 2.64 × 10‑4 Ω cm and transmittance at 368 nm of 95.9% are realized for an ITO thin film grown with Sn-purge in situ treatment. Therefore, the high-power operating voltage decreases from 3.94 V (without treatment) to 3.83 V (with treatment). The improved performance is attributed to the lowering of the tunneling barrier at the LED/ITO interface.

Characteristics of Indium Tin Oxide (ITO) Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps.

PubMed

Choi, Dongchul; Hong, Sung-Jei; Son, Yongkeun

2014-11-27

In this study, indium-tin-oxide (ITO) nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD) panel scraps by means of lift-off method. This can be done by dissolving color filter (CF) layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222) preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate.

Characteristics of Indium Tin Oxide (ITO) Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps

PubMed Central

Choi, Dongchul; Hong, Sung-Jei; Son, Yongkeun

2014-01-01

In this study, indium-tin-oxide (ITO) nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD) panel scraps by means of lift-off method. This can be done by dissolving color filter (CF) layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222) preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate. PMID:28788267

Nanoscale Investigation of Grain Growth in RF-Sputtered Indium Tin Oxide Thin Films by Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Lamsal, B. S.; Dubey, M.; Swaminathan, V.; Huh, Y.; Galipeau, D.; Qiao, Q.; Fan, Q. H.

2014-11-01

This work studied the electronic characteristics of the grains and grain boundaries of indium tin oxide (ITO) thin films using electrostatic and Kelvin probe force microscopy. Two types of ITO films were compared, deposited using radiofrequency magnetron sputtering in pure argon or 99% argon + 1% oxygen, respectively. The average grain size and surface roughness increased with substrate temperature for the films deposited in pure argon. With the addition of 1% oxygen, the increase in the grain size was inhibited above 150°C, which was suggested to be due to passivation of the grains by the excess oxygen. Electrostatic force microscopy and Kelvin probe force microscopy (KPFM) images confirmed that the grain growth was defect mediated and occurred at defective interfaces at high temperatures. Films deposited at room temperature with 1% oxygen showed crystalline nature, while films deposited with pure argon at room temperature were amorphous as observed from KPFM images. The potential drop across the grain and grain boundary was determined by taking surface potential line profiles to evaluate the electronic properties.

Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods.

PubMed

Tice, Daniel B; Li, Shi-Qiang; Tagliazucchi, Mario; Buchholz, D Bruce; Weiss, Emily A; Chang, Robert P H

2014-03-12

Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

Improvement of light extraction for a target wavelength in InGaN/GaN LEDs with an indium tin oxide dual layer by oblique angle deposition

NASA Astrophysics Data System (ADS)

Seo, Dong-Ju; Lee, Dong-Seon

2016-08-01

GaN-based blue LEDs were fabricated and studied with porous, dense, and dual-layer indium tin oxide (ITO) structures as transparent top electrodes to enhance light extraction. The electroluminescence intensity of the LED with a thickness-optimized and refractive-index-tuned ITO dual layer at I = 20 mA was higher by 19.7% than that of the conventional LED with a 200 nm planar ITO. This study confirmed that an ITO dual layer can be made with a single material by optimizing the thickness and tuning the refractive index, which improves the power output without any electrical property degradation.

Potential Mapping of an Indium-Tin-Oxide Glass Box in a GEC Reference Cell

NASA Astrophysics Data System (ADS)

Kaplan, Rebecca; Carmona-Reyes, Jorge; Hyde, Truell; Matthews, Lorin; Casper Program Team

The use of indium-tin-oxide (ITO) coated boxes, as well as boxes coated with other substances, placed on or floating above the lower electrode in studies using Gaseous Electronics Conference Radio Frequency Reference Cells have increased in interest, as have the use of plain glass boxes. This increase in interest is due to the greater ability to control the confinement forces and in effect create dust chain structures which aid in studies within other areas of physics such as; entropy, kinetic dust temperature, plasma balls and coulomb explosions. Further analysis of the data obtained using these boxes shows what appear to be at least two different regions of confinement inside the boxes as well as some unexpected phenomena related to anomalous values and behavior of the electric field. These areas affect the dust to dust and dust to plasma interactions independently in the separate regions and are therefore of great interest. In this study electric potential and electric field maps created in MatLab with data obtained using two probes mounted on CASPER's S-100 nano-manipulator will be presented, connecting the information obtained from these maps to the behavior of the dust observed for different experimental conditions. All of this has been made possible by the opportunity and funding from the CASPER program and the National Science Foundation Grant Number PHY-1262031.

Preparation and optical properties of indium tin oxide/epoxy nanocomposites with polyglycidyl methacrylate grafted nanoparticles.

PubMed

Tao, Peng; Viswanath, Anand; Schadler, Linda S; Benicewicz, Brian C; Siegel, Richard W

2011-09-01

Visibly highly transparent indium tin oxide (ITO)/epoxy nanocomposites were prepared by dispersing polyglycidyl methacrylate (PGMA) grafted ITO nanoparticles into a commercial epoxy resin. The oleic acid stabilized, highly crystalline, and near monodisperse ITO nanoparticles were synthesized via a nonaqueous synthetic route with multigram batch quantities. An azido-phosphate ligand was synthesized and used to exchange with oleic acid on the ITO surface. The azide terminal group allows for the grafting of epoxy resin compatible PGMA polymer chains via Cu(I) catalyzed alkyne-azide "click" chemistry. Transmission electron microscopy (TEM) observation shows that PGMA grafted ITO particles were homogeneously dispersed within the epoxy matrix. Optical properties of ITO/epoxy nanocomposites with different ITO concentrations were studied with an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrometer. All the ITO/epoxy nanocomposites show more than 90% optical transparency in the visible light range and absorption of UV light from 300 to 400 nm. In the near-infrared region, ITO/epoxy nanocomposites demonstrate low transmittance and the infrared (IR) transmission cutoff wavelength of the composites shifts toward the lower wavelength with increased ITO concentration. The ITO/epoxy nanocomposites were applied onto both glass and plastic substrates as visibly transparent and UV/IR opaque optical coatings.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

PubMed

Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

2017-05-23

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Anomalous luminescence phenomena of indium-doped ZnO nanostructures grown on Si substrates by the hydrothermal method

PubMed Central

2012-01-01

In recent years, zinc oxide (ZnO) has become one of the most popular research materials due to its unique properties and various applications. ZnO is an intrinsic semiconductor, with a wide bandgap (3.37 eV) and large exciton binding energy (60 meV) making it suitable for many optical applications. In this experiment, the simple hydrothermal method is used to grow indium-doped ZnO nanostructures on a silicon wafer, which are then annealed at different temperatures (400°C to 1,000°C) in an abundant oxygen atmosphere. This study discusses the surface structure and optical characteristic of ZnO nanomaterials. The structure of the ZnO nanostructures is analyzed by X-ray diffraction, the superficial state by scanning electron microscopy, and the optical measurements which are carried out using the temperature-dependent photoluminescence (PL) spectra. In this study, we discuss the broad peak energy of the yellow-orange emission which shows tendency towards a blueshift with the temperature increase in the PL spectra. This differs from other common semiconductors which have an increase in their peak energy of deep-level emission along with measurement temperature. PMID:22647253

Observations of the Kondo effect and its coexistence with ferromagnetism in a magnetically undoped metal oxide nanostructure

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.; Maloney, F. Scott; Wang, Wenyong

2018-04-01

In this work, we report unusual observations of Kondo effect and coexistence of Kondo effect and ferromagnetism in indium tin oxide (ITO) nanowires that were synthesized without incorporating any magnetic impurities. The temperature-dependent resistivity (ρ -T ) data exhibited an upturn below 80 K and then tended to saturate below 10 K. The ρ -T and magnetoresistance data were analyzed using the n -channel Kondo model, and from the obtained values of S =1 and n ˜1 , the nanowires were expected to be an underscreened Kondo system. A model was also proposed to explain the formation of localized S =1 spin centers in the ITO nanowires. This work could provide insights into the understanding of spin-related novel phenomena in metal oxide nanostructures.

Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

PubMed

Wu, Chia-Ching; Yang, Cheng-Fu

2013-06-12

P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

NASA Astrophysics Data System (ADS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

Nanostructured tin oxide films: Physical synthesis, characterization, and gas sensing properties.

PubMed

Ingole, S M; Navale, S T; Navale, Y H; Bandgar, D K; Stadler, F J; Mane, R S; Ramgir, N S; Gupta, S K; Aswal, D K; Patil, V B

2017-05-01

Nanostructured tin oxide (SnO 2 ) films are synthesized using physical method i.e. thermal evaporation and are further characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy measurement techniques for confirming its structure and morphology. The chemiresistive properties of SnO 2 films are studied towards different oxidizing and reducing gases where these films have demonstrated considerable selectivity towards oxidizing nitrogen dioxide (NO 2 ) gas with a maximum response of 403% to 100ppm @200°C, and fast response and recovery times of 4s and 210s, respectively, than other test gases. In addition, SnO 2 films are enabling to detect as low as 1ppm NO 2 gas concentration @200°C with 23% response enhancement. Chemiresistive performances of SnO 2 films are carried out in the range of 1-100ppm and reported. Finally, plausible adsorption and desorption reaction mechanism of NO 2 gas molecules with SnO 2 film surface has been thoroughly discussed by means of an impedance spectroscopy analysis. Copyright © 2017 Elsevier Inc. All rights reserved.

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

PubMed

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation.

PubMed

Liu, Shu-Yen; Sheu, J K; Lee, M L; Lin, Yu-Chuan; Tu, S J; Huang, F W; Lai, W C

2012-03-12

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.

Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

NASA Astrophysics Data System (ADS)

Mirzaee, Majid; Dolati, Abolghasem

2015-03-01

We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

NASA Astrophysics Data System (ADS)

Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael

We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.

Transparent electrodes for high E-field production using a buried indium tin oxide layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunton, Will; Polovy, Gene; Semczuk, Mariusz

2016-03-15

We present a design and characterization of optically transparent electrodes suitable for atomic and molecular physics experiments where high optical access is required. The electrodes can be operated in air at standard atmospheric pressure and do not suffer electrical breakdown even for electric fields far exceeding the dielectric breakdown of air. This is achieved by putting an indium tin oxide coated dielectric substrate inside a stack of dielectric substrates, which prevents ion avalanche resulting from Townsend discharge. With this design, we observe no arcing for fields of up to 120 kV/cm. Using these plates, we directly verify the production ofmore » electric fields up to 18 kV/cm inside a quartz vacuum cell by a spectroscopic measurement of the dc Stark shift of the 5{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transition for a cloud of laser cooled rubidium atoms. We also report on the shielding of the electric field and on the residual electric fields that persist within the vacuum cell once the electrodes are discharged. In addition, we discuss observed atom loss that results from the motion of free charges within the vacuum. The observed asymmetry of these phenomena on the bias of the electrodes suggests that field emission of electrons within the vacuum is primarily responsible for these effects and may indicate a way of mitigating them.« less

Experimental Analysis of Critical Current and Alternating Current Losses of High-Temperature Superconductor Tape with Resin and Gallium-Indium-Tin

PubMed Central

Sun, Yajie; Zhang, Huiming; Meng, Yuanzhu

2018-01-01

This paper experimentally analyzes the critical current degradation and AC (alternating current) losses of second-generation (2G) high-temperature superconductor (HTS) tape during the impregnation process. Two impregnation materials were utilized: Gallium-Indium-Tin (GaInSn), and an epoxy resin, Araldite. The critical current of the impregnation materials was measured after different thermal cycles and compared with the tape with no impregnation process. The experimental results show that the critical current of Yttrium Barium Copper Oxide (YBCO) short samples varies between differently impregnated materials. The resin, Araldite, degraded the critical current; however, the GaInSn showed no degradation. Two degradation patterns with Araldite were identified due to the impregnation process, and the corresponding causes were analyzed. We further measured the AC losses of tapes impregnated with liquid metal at different frequencies, up to 600 Hz. Based on the experimental results, GaInSn liquid metal should be the most suitable impregnation material in terms of critical current degradation. PMID:29642490

Direct imprinting of indium-tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor

NASA Astrophysics Data System (ADS)

Haga, Ken-ichi; Kamiya, Yuusuke; Tokumitsu, Eisuke

2018-02-01

We report on a new fabrication process for thin-film transistors (TFTs) with a new structure and a new operation principle. In this process, both the channel and electrode (source/drain) are formed simultaneously, using the same oxide material, using a single nano-rheology printing (n-RP) process, without any conventional lithography process. N-RP is a direct thermal imprint technique and deforms oxide precursor gel. To reduce the source/drain resistance, the material common to the channel and electrode is conductive indium-tin-oxide (ITO). The gate insulator is made of a ferroelectric material, whose high charge density can deplete the channel of the thin ITO film, which realizes the proposed operation principle. First, we have examined the n-RP conditions required for the channel and source/drain patterning, and found that the patterning properties are strongly affected by the cooling rate before separating the mold. Second, we have fabricated the TFTs as proposed and confirmed their TFT operation.

Experimental Analysis of Critical Current and Alternating Current Losses of High-Temperature Superconductor Tape with Resin and Gallium-Indium-Tin.

PubMed

Yu, Dongmin; Sun, Yajie; Zhang, Huiming; Meng, Yuanzhu; Liu, Huanan

2018-04-08

This paper experimentally analyzes the critical current degradation and AC (alternating current) losses of second-generation (2G) high-temperature superconductor (HTS) tape during the impregnation process. Two impregnation materials were utilized: Gallium-Indium-Tin (GaInSn), and an epoxy resin, Araldite. The critical current of the impregnation materials was measured after different thermal cycles and compared with the tape with no impregnation process. The experimental results show that the critical current of Yttrium Barium Copper Oxide (YBCO) short samples varies between differently impregnated materials. The resin, Araldite, degraded the critical current; however, the GaInSn showed no degradation. Two degradation patterns with Araldite were identified due to the impregnation process, and the corresponding causes were analyzed. We further measured the AC losses of tapes impregnated with liquid metal at different frequencies, up to 600 Hz. Based on the experimental results, GaInSn liquid metal should be the most suitable impregnation material in terms of critical current degradation.

Simply modified indium tin oxides by ultrathin aluminum and sodium chloride composite interlayer for high performance inverted polymer solar cells

NASA Astrophysics Data System (ADS)

Zheng, Shuang; Wu, Zhenxuan; Zhang, Chuan; Liu, Huan; Yan, Minnan; Su, Xiaodan; Wang, Jin; Zhang, Hongmei; Ma, Dongge

2017-07-01

We report the fabrication of high performance inverted polymer solar cells with simply modified indium tin oxide (ITO) by an ultrathin aluminum (Al) and sodium chloride (NaCl) composite layer. The device efficiency and stability were both improved. The optimized device with poly(3-hexylthiophene) as the donor and [6,6]-phenyl-C61-butyric acid methylester as the acceptor under AM 1.5 (100 mw cm-2) radiation achieved a high power conversion efficiency of 3.88% with an open-circuit voltage of 0.60 V and a fill factor of 0.61, which is significantly higher than those of the inverted devices with only Al or NaCl as modification interlayer, respectively. Moreover, the stability is enhanced by about 70% more than that of the conventional device. The significant enhancement is attributed to the reduced work function of ITO electrode from 4.75 to 3.90 eV by modification as well as the improvement of the electrode interface.

Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection

NASA Astrophysics Data System (ADS)

Li, Hu; Karahashi, Kazuhiro; Friederich, Pascal; Fink, Karin; Fukasawa, Masanaga; Hirata, Akiko; Nagahata, Kazunori; Tatsumi, Tetsuya; Wenzel, Wolfgang; Hamaguchi, Satoshi

2018-06-01

It is known that the etching yield (i.e., sputtering yield) of tin-doped indium oxide (ITO) by hydrocarbon ions (CH x +) is higher than its corresponding physical sputtering yield [H. Li et al., J. Vac. Sci. Technol. A 33, 060606 (2015)]. In this study, the effects of hydrogen in the incident hydrocarbon ion beam on the etching yield of ITO have been examined experimentally and theoretically with the use of a mass-selected ion beam system and by first-principles quantum mechanical (QM) simulation. As in the case of ZnO [H. Li et al., J. Vac. Sci. Technol. A 35, 05C303 (2017)], mass-selected ion beam experiments have shown that the physical sputtering yield of ITO by chemically inert Ne ions increases after a pretreatment of the ITO film by energetic hydrogen ion injection. First-principles QM simulation of the interaction of In2O3 with hydrogen atoms shows that hydrogen atoms embedded in In2O3 readily form hydroxyl (OH) groups and weaken or break In–O bonds around the hydrogen atoms, making the In2O3 film less resistant to physical sputtering. This is consistent with experimental observation of the enhanced etching yields of ITO by CH x + ions, considering the fact that hydrogen atoms of the incident CH x + ions are embedded into ITO during the etching process.

Modifying the Casimir force between indium tin oxide film and Au sphere

NASA Astrophysics Data System (ADS)

Banishev, A. A.; Chang, C.-C.; Castillo-Garza, R.; Klimchitskaya, G. L.; Mostepanenko, V. M.; Mohideen, U.

2012-01-01

We present complete results of the experiment on measuring the Casimir force between an Au-coated sphere and an untreated or, alternatively, UV-treated indium tin oxide (ITO) film deposited on a quartz substrate. Measurements were performed using an atomic force microscope in a high vacuum chamber. The measurement system was calibrated electrostatically. Special analysis of the systematic deviations is performed, and respective corrections in the calibration parameters are introduced. The corrected parameters are free from anomalies discussed in the literature. The experimental data for the Casimir force from two measurement sets for both untreated and UV-treated samples are presented. The random, systematic, and total experimental errors are determined at a 95% confidence level. It is demonstrated that the UV treatment of an ITO plate results in a significant decrease in the magnitude of the Casimir force (from 21% to 35% depending on separation). However, ellipsometry measurements of the imaginary parts of dielectric permittivities of the untreated and UV-treated samples did not reveal any significant differences. The experimental data are compared with computations in the framework of the Lifshitz theory. It is found that the data for the untreated sample are in a very good agreement with theoretical results taking into account the free charge carriers in an ITO film. For the UV-treated sample the data exclude the theoretical results obtained with account of free charge carriers. These data are in very good agreement with computations disregarding the contribution of free carriers in the dielectric permittivity. According to the hypothetical explanation provided, this is caused by the phase transition of the ITO film from metallic to dielectric state caused by the UV treatment. Possible applications of the discovered phenomenon in nanotechnology are discussed.

Electron transport within transparent assemblies of tin-doped indium oxide colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Grisolia, J.; Decorde, N.; Gauvin, M.; Sangeetha, N. M.; Viallet, B.; Ressier, L.

2015-08-01

Stripe-like compact assemblies of tin-doped indium oxide (ITO) colloidal nanocrystals (NCs) are fabricated by stop-and-go convective self-assembly (CSA). Systematic evaluation of the electron transport mechanisms in these systems is carried out by varying the length of carboxylate ligands protecting the NCs: butanoate (C4), octanoate (C8) and oleate (C18). The interparticle edge-to-edge distance L0, along with a number of carbon atoms in the alkyl chain of the coating ligand, are deduced from small-angle x-ray scattering (SAXS) measurements and exhibit a linear relationship with a slope of 0.11 nm per carbon pair unit. Temperature-dependent resistance characteristics are analyzed using several electron transport models: Efros-Shklovskii variable range hopping (ES-VRH), inelastic cotunneling (IC), regular island array and percolation. The analysis indicated that the first two models (ES-VRH and IC) fail to explain the observed behavior, and that only simple activated transport takes place in these systems under the experimental conditions studied (T = 300 K to 77 K). Related transport parameters were then extracted using the regular island array and percolation models. The effective tunneling decay constant βeff of the ligands and the Coulomb charging energy EC are found to be around 5.5 nm-1 and 25 meV, respectively, irrespective of ligand lengths. The theoretical tunneling decay constant β calculated using the percolation model is in the range 9 nm-1. Electromechanical tests on the ITO nanoparticle assemblies indicate that their sensitivities are as high as ˜30 and remain the same regardless of ligand lengths, which is in agreement with the constant effective βeff extracted from regular island array and percolation models.

An electrically conductive thermal control surface for spacecraft encountering Low-Earth Orbit (LEO) atomic oxygen indium tin oxide-coated thermal blankets

NASA Technical Reports Server (NTRS)

Bauer, J. L.

1987-01-01

An organic black thermal blanket material was coated with indium tin oxide (ITO) to prevent blanket degradation in the low Earth orbit (LEO) atomic oxygen environment. The blankets were designed for the Galileo spacecraft. Galileo was initially intended for space shuttle launch and would, therefore, have been exposed to atomic oxygen in LEO for between 10 and 25 hours. Two processes for depositing ITO are described. Thermooptical, electrical, and chemical properties of the ITO film are presented as a function of the deposition process. Results of exposure of the ITO film to atomic oxygen (from a shuttle flight) and radiation exposure (simulated Jovian environment) are also presented. It is shown that the ITO-protected thermal blankets would resist the anticipated LEO oxygen and Jovian radiation yet provide adequate thermooptical and electrical resistance. Reference is made to the ESA Ulysses spacecraft, which also used ITO protection on thermal control surfaces.

Use of and Occupational Exposure to Indium in the United States

PubMed Central

Hines, Cynthia J.; Roberts, Jennifer L.; Andrews, Ronnee N.; Jackson, Matthew V.; Deddens, James A.

2015-01-01

Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009–2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m3 for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

NASA Astrophysics Data System (ADS)

Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

2016-09-01

A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

Biofunctionalized Nanostructured Zirconia for Biomedical Application: A Smart Approach for Oral Cancer Detection

PubMed Central

Kumar, Suveen; Kumar, Saurabh; Tiwari, Sachchidanand; Srivastava, Saurabh; Srivastava, Manish; Yadav, Birendra Kumar; Kumar, Saroj; Tran, Thien Toan; Dewan, Ajay Kumar; Mulchandani, Ashok; Sharma, Jai Gopal; Maji, Sagar

2015-01-01

Results of the studies are reported relating to application of the silanized nanostructured zirconia, electrophoretically deposited onto indium tin oxide (ITO) coated glass for covalent immobilization of the monoclonal antibodies (anti‐CYFRA‐21‐1). This biosensing platform has been utilized for a simple, efficient, noninvasive, and label‐free detection of oral cancer via cyclic voltammetry technique. The results of electrochemical response studies conducted on bovine serum albumin (BSA)/anti‐CYFRA‐21‐1/3‐aminopropyl triethoxy silane (APTES)/ZrO2/ITO immunoelectrode reveal that this immunoelectrode can be used to measure CYFRA‐21‐1 (oral cancer biomarker) concentration in saliva samples, with a high sensitivity of 2.2 mA mL ng−1, a linear detection range of 2–16 ng mL−1, and stability of six weeks. The results of these studies have been validated via enzyme‐linked immunosorbent assay. PMID:27980963

Synthesis and superconductivity of In-doped SnTe nanostructures

DOE PAGES

Kumaravadivel, Piranavan; Pan, Grace A.; Zhou, Yu; ...

2017-07-01

In xSn 1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize In xSn 1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absencemore » of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of In xSn 1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications« less

Synthesis and superconductivity of In-doped SnTe nanostructures

NASA Astrophysics Data System (ADS)

Kumaravadivel, Piranavan; Pan, Grace A.; Zhou, Yu; Xie, Yujun; Liu, Pengzi; Cha, Judy J.

2017-07-01

InxSn1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications.

Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

2012-10-01

The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2012-02-01

In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.kr

2014-09-01

The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10{sup −5} Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10{sup −3} Ω{sup −1}, comparable to those of the ITO/Ag/ITOmore » multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs.« less

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

NASA Astrophysics Data System (ADS)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Effective Electrochemistry of Human Sulfite Oxidase Immobilized on Quantum-Dots-Modified Indium Tin Oxide Electrode.

PubMed

Zeng, Ting; Leimkühler, Silke; Koetz, Joachim; Wollenberger, Ulla

2015-09-30

The bioelectrocatalytic sulfite oxidation by human sulfite oxidase (hSO) on indium tin oxide (ITO) is reported, which is facilitated by functionalizing of the electrode surface with polyethylenimine (PEI)-entrapped CdS nanoparticles and enzyme. hSO was assembled onto the electrode with a high surface loading of electroactive enzyme. In the presence of sulfite but without additional mediators, a high bioelectrocatalytic current was generated. Reference experiments with only PEI showed direct electron transfer and catalytic activity of hSO, but these were less pronounced. The application of the polyelectrolyte-entrapped quantum dots (QDs) on ITO electrodes provides a compatible surface for enzyme binding with promotion of electron transfer. Variations of the buffer solution conditions, e.g., ionic strength, pH, viscosity, and the effect of oxygen, were studied in order to understand intramolecular and heterogeneous electron transfer from hSO to the electrode. The results are consistent with a model derived for the enzyme by using flash photolysis in solution and spectroelectrochemistry and molecular dynamic simulations of hSO on monolayer-modified gold electrodes. Moreover, for the first time a photoelectrochemical electrode involving immobilized hSO is demonstrated where photoexcitation of the CdS/hSO-modified electrode lead to an enhanced generation of bioelectrocatalytic currents upon sulfite addition. Oxidation starts already at the redox potential of the electron transfer domain of hSO and is greatly increased by application of a small overpotential to the CdS/hSO-modified ITO.

Optical Detection of Ketoprofen by Its Electropolymerization on an Indium Tin Oxide-Coated Optical Fiber Probe.

PubMed

Bogdanowicz, Robert; Niedziałkowski, Paweł; Sobaszek, Michał; Burnat, Dariusz; Białobrzeska, Wioleta; Cebula, Zofia; Sezemsky, Petr; Koba, Marcin; Stranak, Vitezslav; Ossowski, Tadeusz; Śmietana, Mateusz

2018-04-27

In this work an application of optical fiber sensors for real-time optical monitoring of electrochemical deposition of ketoprofen during its anodic oxidation is discussed. The sensors were fabricated by reactive magnetron sputtering of indium tin oxide (ITO) on a 2.5 cm-long core of polymer-clad silica fibers. ITO tuned in optical properties and thickness allows for achieving a lossy-mode resonance (LMR) phenomenon and it can be simultaneously applied as an electrode in an electrochemical setup. The ITO-LMR electrode allows for optical monitoring of changes occurring at the electrode during electrochemical processing. The studies have shown that the ITO-LMR sensor’s spectral response strongly depends on electrochemical modification of its surface by ketoprofen. The effect can be applied for real-time detection of ketoprofen. The obtained sensitivities reached over 1400 nm/M (nm·mg −1 ·L) and 16,400 a.u./M (a.u.·mg −1 ·L) for resonance wavelength and transmission shifts, respectively. The proposed method is a valuable alternative for the analysis of ketoprofen within the concentration range of 0.25⁻250 μg mL −1 , and allows for its determination at therapeutic and toxic levels. The proposed novel sensing approach provides a promising strategy for both optical and electrochemical detection of electrochemical modifications of ITO or its surface by various compounds.

Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

PubMed

Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

2013-11-01

12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

Synthesis of nano-structured tin oxide thin films with faster response to LPG and ammonia by spray pyrolysis

NASA Astrophysics Data System (ADS)

PrasannaKumari, K.; Thomas, Boben

2018-01-01

Nanostructured SnO2 thin film have been efficiently fabricated by spray pyrolysis using atomizers of different types. The structure and morphology of as-prepared samples are investigated by techniques such as x-ray diffraction, and field-emission scanning electron microscopy. Significant morphological changes are observed in films by modifying the precursor atomization as a result of change of spray device. The optical characterization indicates that change in atomization, affects the absorbance and the band gap, following the varied crystallite size. Gas sensing investigations on ultrasonically prepared tin oxide films show NH3 response at operating temperatures lower down to 50 °C. For 1000 ppm of LPG the response at 350 °C for air blast atomizer film is about 99%, with short response and recovery times. The photoluminescence emmision spectra reveal the correlation between atomization process and the quantity of oxygen vacancies present in the samples. The favorable size reduction in microstructure with good crystallinity with slight change in lattice properties suggest their scope in gas sensing applications. On the basis of these characterizations, the mechanism of LPG and NH3 gas sensing of nanostructured SnO2 thin films has been proposed.

Enhanced conductivity of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film by acid treatment for indium tin oxide-free organic solar cells

NASA Astrophysics Data System (ADS)

Lin, Chun-Chiao; Huang, Chih-Kuo; Hung, Yu-Chieh; Chang, Mei-Ying

2016-08-01

An acid treatment is used in the enhancement of the conductivity of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) thin film, which is often used as the anode in organic solar cells. There are three types of acid treatment for PEDOT:PSS thin film: hydrochloric, sulfuric, and phosphoric acid treatments. In this study, we examine and compare these three ways with each other for differences in conductivity. Hydrochloric acid results in the highest conductivity enhancement, from 0.3 to 1109 S/cm. We also discuss the optical transmittance, conductivity, surface roughness, surface morphology, and stability, as well as the factors that can influence device efficiency. The devices are fabricated using an acid-treated PEDOT:PSS thin film as the anode. The highest power conversion efficiency was 1.32%, which is a large improvement over that of the unmodified organic solar cell (0.21%). It is comparable to that obtained when using indium tin oxide (ITO) as an electrode, ca. 1.46%.

Fabrication of two-layer poly(dimethyl siloxane) devices for hydrodynamic cell trapping and exocytosis measurement with integrated indium tin oxide microelectrodes arrays

PubMed Central

Gao, Changlu; Sun, Xiuhua; Gillis, Kevin D.

2016-01-01

The design, fabrication and test of a microfluidic cell trapping device to measure single cell exocytosis were reported. Research on the patterning of double layer template based on repetitive standard photolithography of AZ photoresist was investigated. The replicated poly(dimethyl siloxane) devices with 2.5 μm deep channels were proved to be efficient for stopping cells. Quantal exocytosis measurement can be achieved by targeting single or small clumps of chromaffin cells on top of the 10 μm ×10 μm indium tin oxide microelectrodes arrays with the developed microdevice. And about 72% of the trapping sites can be occupied by cells with hydrodynamic trapping method and the recorded amperometric signals are comparable to the results with traditional carbon fiber microelectrodes. The method of manufacturing the microdevices is simple, low-cost and easy to perform. The manufactured device offers a platform for the high throughput detection of quantal catecholamine exocytosis from chromaffin cells with sufficient sensitivity and broad application. PMID:23329291

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles In Vitro

PubMed Central

Morgan, Daniel L.

2013-01-01

Indium-containing particles (ICPs) are used extensively in the microelectronics industry. Pulmonary toxicity is observed after inhalation exposure to ICPs; however, the mechanism(s) of pathogenesis is unclear. ICPs are insoluble at physiological pH and are initially engulfed by alveolar macrophages (and likely airway epithelial cells). We hypothesized that uptake of ICPs by macrophages followed by phagolysosomal acidification results in the solubilization of ICPs into cytotoxic indium ions. To address this, we characterized the in vitro cytotoxicity of indium phosphide (InP) or indium tin oxide (ITO) particles with macrophages (RAW cells) and lung-derived epithelial (LA-4) cells at 24h using metabolic (3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium bromide) and membrane integrity (lactate dehydrogenase) assays. InP and ITO were readily phagocytosed by RAW and LA-4 cells; however, the particles were much more cytotoxic to RAW cells and cytotoxicity was dose dependent. Treatment of RAW cells with cytochalasin D (CytoD) blocked particle phagocytosis and reduced cytotoxicity. Treatment of RAW cells with bafilomycin A1, a specific inhibitor of phagolysosomal acidification, also reduced cytotoxicity but did not block particle uptake. Based on direct indium measurements, the concentration of ionic indium was increased in culture medium from RAW but not LA-4 cells following 24-h treatment with particles. Ionic indium derived from RAW cells was significantly reduced by treatment with CytoD. These data implicate macrophage uptake and solubilization of InP and ITO via phagolysosomal acidification as requisite for particle-induced cytotoxicity and the release of indium ions. This may apply to other ICPs and strongly supports the notion that ICPs require solubilization in order to be toxic. PMID:23872580

Robust infrared-shielding coating films prepared using perhydropolysilazane and hydrophobized indium tin oxide nanoparticles with tuned surface plasmon resonance.

PubMed

Katagiri, Kiyofumi; Takabatake, Ryuichi; Inumaru, Kei

2013-10-23

Robust infrared (IR)-shielding coating films were prepared by dispersing indium tin oxide (ITO) nanoparticles (NPs) in a silica matrix. Hydrophobized ITO NPs were synthesized via a liquid phase process. The surface plasmon resonance (SPR) absorption of the ITO NPs could be tuned by varying the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength and strongest SPR absorption were obtained for the ITO NPs doped with 10% Sn because they possessed the highest electron carrier density. Coating films composed of a continuous silica matrix homogeneously dispersed with ITO NPs were obtained using perhydropolysilazane (PHPS) as a precursor. PHPS was completely converted to silica by exposure to the vapor from aqueous ammonia at 50 °C. The prepared coating films can efficiently shield IR radiation even though they are more than 80% transparent in the visible range. The coating film with the greatest IR-shielding ability completely blocked IR light at wavelengths longer than 1400 nm. The pencil hardness of this coating film was 9H at a load of 750 g, which is sufficiently robust for applications such as automotive glass.

Electrocatalytic performance of Pt nanoparticles sputter-deposited on indium tin oxide toward methanol oxidation reaction: The particle size effect

NASA Astrophysics Data System (ADS)

Ting, Chao-Cheng; Chao, Chih-Hsuan; Tsai, Cheng Yu; Cheng, I.-Kai; Pan, Fu-Ming

2017-09-01

We sputter-deposited Pt nanoparticles with an average size ranging from 2.0 nm to 8.5 nm on the indium-tin oxide (ITO) glass substrate, and studied the effect of the size of Pt nanoparticles on electrocatalytic activity of the Pt/ITO electrode toward methanol oxidation reaction (MOR) in acidic solution. X-ray photoelectron spectroscopy (XPS) reveals an interfacial oxidized Pt layer present between Pt nanoparticles and the ITO substrate, which may modify the surface electronic structure of Pt nanoparticles and thus influences the electrocatalytic properties of the Pt catalyst toward MOR. According to electrochemical analyses, smaller Pt nanoparticles exhibit slower kinetics for CO electrooxidation and MOR. However, a smaller particle size enables better CO tolerance because the bifunctional mechanism is more effective on smaller Pt nanoparticles. The electrocatalytic activity decays rapidly for Pt nanoparticles with a size smaller than 3 nm and larger than 8 nm. The rapid activity decay is attributed to Pt dissolution for smaller nanoparticles and to CO poisoning for larger ones. Pt nanoparticles of 5-6 nm in size loaded on ITO demonstrate a greatly improved electrocatalytic activity and stability compared with those deposited on different substrates in our previous studies.

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S.; Mukherjee, S.; Sarkar, K.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 10{sup 19 }cm{sup −3} for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurementsmore » confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.« less

Tessellated gold nanostructures from Au144(SCH2CH2Ph)60 molecular precursors and their use in organic solar cell enhancement

NASA Astrophysics Data System (ADS)

Bauld, Reg; Hesari, Mahdi; Workentin, Mark S.; Fanchini, Giovanni

2014-06-01

We report for the first time the fabrication of nanocomposite hole-blocking layers consisting of poly-3,4-ethylene-dioxythiophene:poly-styrene-sulfonate (PEDOT:PSS) thin films incorporating networks of gold nanoparticles assembled from Au144(SCH2CH2Ph)60, a molecular gold precursor. These thin films can be prepared reproducibly on indium tin oxide by spinning on it Au144(SCH2CH2Ph)60 solutions in chlorobenzene, annealing the resulting thin film at 400 °C, and subsequently spinning PEDOT:PSS on top. The use of our nanocomposite hole-blocking layers for enhancing the photoconversion efficiency of bulk heterojunction organic solar cells is demonstrated. By varying the concentration of Au144(SCH2CH2Ph)60 in the starting solution and the annealing time, different gold nanostructures were obtained ranging from individual gold nanoparticles (AuNPs) to tessellated networks of gold nanostructures (Tess-AuNPs). Improvement in organic solar cell efficiencies up to 10% relative to a reference cell is demonstrated with Tess-AuNPs embedded in PEDOT:PSS.

Onset and evolution of laser induced periodic surface structures on indium tin oxide thin films for clean ablation using a repetitively pulsed picosecond laser at low fluence

NASA Astrophysics Data System (ADS)

Farid, N.; Dasgupta, P.; O’Connor, G. M.

2018-04-01

The onset and evolution of laser induced periodic surface structures (LIPSS) is of key importance to obtain clean ablated features on indium tin oxide (ITO) thin films at low fluences. The evolution of subwavelength periodic nanostructures on a 175 nm thick ITO film, using 10 ps laser pulses at a wavelength of 1032 nm, operating at 400 kHz, is investigated. Initially nanoblisters are observed when a single pulse is applied below the damage threshold fluence (0.45 J cm‑2) the size and distribution of nanoblisters are found to depend on fluence. Finite difference time domain (FDTD) simulations support the hypothesis that conductive nanoblisters can enhance the local intensity of the applied electromagnetic field. The LIPSS are observed to evolve from regions where the electric field enhancement has occurred; LIPSS has a perpendicular orientation relative to the laser polarization for a small number (<5) of applied pulses. The LIPSS periodicity depends on nanoblister size and distribution; a periodicity down to 100 nm is observed at the lower fluence periphery of the Gaussian irradiated area where nanoblisters are smallest and more closely arranged. Upon irradiation with successive (>5) pulses, the orientation of the periodic structures appears to rotate and evolve to become aligned in parallel with the laser polarization at approximately the same periodicity. These orientation effects are not observed at higher fluence—due to the absence of the nanoblister-like structures; this apparent rotation is interpreted to be due to stress-induced fragmentation of the LIPSS structure. The application of subsequent pulses leads to clean ablation. LIPSS are further modified into features of a shorter period when laser scanning is used. Results provide evidence that the formation of conductive nanoblisters leads to the enhancement of the applied electromagnetic field and thereby can be used to precisely control laser ablation on ITO thin films.

Enhancement of room temperature ferromagnetism in tin oxide nanocrystal using organic solvents

NASA Astrophysics Data System (ADS)

Sakthiraj, K.; Hema, M.; Balachandra Kumar, K.

2017-10-01

The effect of organic solvents (ethanol & ethylene glycol) on the room temperature ferromagnetism in nanocrystalline tin oxide has been studied. The samples were synthesized using sol-gel method with the mixture of water & organic liquid as solvent. It is found that pristine SnO2 nanocrystal contain two different types of paramagnetic centres over their surface:(i) surface chemisorbed oxygen species and (ii) Sn interstitial & oxygen vacancy defect pair. The magnetic moment induced in the as-prepared samples is mainly contributed by the alignment of local spin moments resulting from these defects. These surface defect states are highly activated by the usage of ethylene glycol solvent rather than ethylene in tin oxide nanostructure synthesis. Powder X-ray diffraction, transmission electron microscope imaging, energy dispersive spectrometry, Fourier transformed infrared spectroscopy, UV-vis absorption spectroscopy, photoluminescence spectroscopy, vibrating sample magnetometer measurement and electron spin resonance spectroscopy were employed to characterize the nanostructured tin oxide materials.

Fabrication and characterization of highly transparent and conductive indium tin oxide films made with different solution-based methods

NASA Astrophysics Data System (ADS)

Xia, N.; Gerhardt, R. A.

2016-11-01

Solution-based fabrication methods can greatly reduce the cost and broaden the applications of transparent conducting oxides films, such as indium tin oxide (ITO) films. In this paper, we report on ITO films fabricated by spin coating methods on glass substrates with two different ITO sources: (1) a commercial ITO nanopowder water dispersion and (2) a sol-gel ITO solution. A simple and fast air annealing process was used to treat as-coated ITO films on a controlled temperature hot plate. Thermogravimetric analysis and x-ray diffraction showed that highly crystalline ITO films were formed after the annealing steps. The final ITO films had a good combination of optical properties and electrical properties, especially for films made from five layers of sol-gel ITO (92.66% transmittance and 8.7 × 10-3 Ω cm resistivity). The surface morphology and conducting network on the ITO films were characterized by non-contact and current atomic force microscopy. It was found that conducting paths were only partially connected for the nanoparticle ITO dispersion films, whereas the sol-gel ITO films had a more uniformly distributed conducting network on the surface. We also used the sol-gel ITO films to fabricate a simple liquid crystal display (LCD) device to demonstrate the excellent properties of our films.

Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

PubMed

Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

2015-11-01

We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces.

10 CFR Appendix C to Part 20 - Quantities 1 of Licensed Material Requiring Labeling

Code of Federal Regulations, 2012 CFR

2012-01-01

... Indium-115 100 Indium-116m 1,000 Indium-117m 1,000 Indium-117 1,000 Indium-119m 1,000 Tin-110 100 Tin-111 1,000 Tin-113 100 Tin-117m 100 Tin-119m 100 Tin-121m 100 Tin-121 1,000 Tin-123m 1,000 Tin-123 10 Tin-125 10 Tin-126 10 Tin-127 1,000 Tin-128 1,000 Antimony-115 1,000 Antimony-116m 1,000 Antimony-116 1...

High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium-Tin-Oxide Mie Scatterers.

PubMed

van Dam, Dick; van Hoof, Niels J J; Cui, Yingchao; van Veldhoven, Peter J; Bakkers, Erik P A M; Gómez Rivas, Jaime; Haverkort, Jos E M

2016-12-27

Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm 2 under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III-V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength average of 12% due to Mie scattering. These results unambiguously demonstrate the potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices.

Radiation-induced deposition of transparent conductive tin oxide coatings

NASA Astrophysics Data System (ADS)

Umnov, S.; Asainov, O.; Temenkov, V.

2016-04-01

The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm2, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides.

Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

NASA Astrophysics Data System (ADS)

Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei

2015-01-01

Biosensing interfaces consisting of linker molecules (COOH or NH2) and charged, antifouling moieties ((sbnd SO3- and N+(Me)3) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA-FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC-Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study, we used 2-[2-(2-methoxyethoxy) ethoxy]acetic acid (OEG) as a standard control because of its prominent antifouling properties. Surface compositions of combinations 1 and 2 were characterized using X-ray photoelectron spectroscopy (XPS). Field-emission scanning electron microscopy (FE-SEM) was used to characterize the morphology of the grafted films to confirm the even distribution between linker and antifouling molecules grafted onto the ITO surfaces

Indium tin oxide thin film strain gages for use at elevated temperatures

NASA Astrophysics Data System (ADS)

Luo, Qing

A robust ceramic thin film strain gage based on indium-tin-oxide (ITO) has been developed for static and dynamic strain measurements in advanced propulsion systems at temperatures up to 1400°C. These thin film sensors are ideally suited for in-situ strain measurement in harsh environments such as those encountered in the hot sections of gas turbine engines. A novel self-compensation scheme was developed using thin film platinum resistors placed in series with the active strain element (ITO) to minimize the thermal effect of strain or apparent strain. A mathematical model as well as design rules were developed for the self-compensated circuitry using this approach and close agreement between the model and actual static strain results has been achieved. High frequency dynamic strain tests were performed at temperatures up to 500°C and at frequencies up to 2000Hz to simulate conditions that would be encountered during engine vibration fatigue. The results indicated that the sensors could survive extreme test conditions while maintaining sensitivity. A reversible change in sign of the piezoresistive response from -G to +G was observed in the vicinity of 950°C, suggesting that the change carrier responsible for conduction in the ITO gage had been converted from a net "n-carrier" to a net "p-carrier" semiconductor. Electron spectroscopy for chemical analysis (ESCA) of the ITO films suggested they experienced an interfacial reaction with the Al2O3 substrate at 1400°C. It is likely that oxygen uptake from the substrate is responsible for stabilizing the ITO films to elevated temperatures through the interfacial reaction. Thermo gravimetric analysis of ITO films on alumina at elevated temperatures showed no sublimation of ITO films at temperature up to 1400°C. The surface morphology of ITO films heated to 800, 1200 and 1400°C were also evaluated by atomic force microscopy (AFM). A linear current-voltage (I--V) characteristic indicated that the contact interface

Endocytosis of indium-tin-oxide nanoparticles by macrophages provokes pyroptosis requiring NLRP3-ASC-Caspase1 axis that can be prevented by mesenchymal stem cells

PubMed Central

Naji, Abderrahim; Muzembo, Basilua André; Yagyu, Ken-ichi; Baba, Nobuyasu; Deschaseaux, Frédéric; Sensebé, Luc; Suganuma, Narufumi

2016-01-01

The biological effects of indium-tin-oxide (ITO) are of considerable importance because workers exposed to indium compounds have been diagnosed with interstitial lung disease or pulmonary alveolar proteinosis; however, the pathophysiology of these diseases is undefined. Here, mice intraperitoneally inoculated with ITO-nanoparticles (ITO-NPs) resulted in peritonitis dependent in NLRP3 inflammasome, with neutrophils recruitment and interleukin-1β (IL-1β) production. Withal peritoneal macrophages exposed ex vivo to ITO-NPs caused IL-1β secretion and cytolysis. Further, alveolar macrophages exposed to ITO-NPs in vitro showed ITO-NP endocytosis and production of tumor necrosis factor-α (TNF-α) and IL-1β, ensued cell death by cytolysis. This cell death was RIPK1-independent but caspase1-dependent, and thus identified as pyroptosis. Endocytosis of ITO-NPs by activated THP-1 cells induced pyroptosis with IL-1β/TNF-α production and cytolysis, but not in activated THP-1 cells with knockdown of NLRP3, ASC, or caspase1. However, exposing activated THP-1 cells with NLRP3 or ASC knockdown to ITO-NPs resulted in cell death but without cytolysis, with deficiency in IL-1β/TNF-α, and revealing features of apoptosis. While, mesenchymal stem cells (MSCs) co-cultured with macrophages impaired both inflammation and cell death induced by ITO-NPs. Together, our findings provide crucial insights to the pathophysiology of respiratory diseases caused by ITO particles, and identify MSCs as a potent therapeutic. PMID:27194621

Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

PubMed

Ho, Sut Kam; Garcia, Dario Machado

2017-04-01

A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor.

PubMed

Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

2014-12-01

This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0-178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4°C in silica gel. Copyright © 2014 Elsevier B.V. All rights reserved.

Improving crystallization and electron mobility of indium tin oxide by carbon dioxide and hydrogen dual-step plasma treatment

NASA Astrophysics Data System (ADS)

Wang, Fengyou; Du, Rongchi; Ren, Qianshang; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

2017-12-01

Obtaining high conductivity indium tin oxide (ITO) films simultaneously with a "soft-deposited" (low temperature, low ions bombardment) and cost-efficient deposition process are critical aspect for versatile photo-electronic devices application. Usually, the low-cost "soft-deposited" process could be achieved via evaporation technique, but with scarifying the conductivity of the films. Here, we show a CO2 and H2 two-step plasma (TSP) post-treatment applied to ITO films prepared by reactive thermal evaporation (RTE), allows to meet the special trade-off between the deposition techniques and the electrical properties. Upon treatment, an increase in electron concentration and electron mobility is observed, which subsequently resulting a low sheet resistivity. The mobility reaches high values of 80.9 cm2/Vs for the TSP treated ∼100 nm thickness samples. From a combination of X-ray photoelectron spectroscopy and opto-electronic measurements, it demonstrated that: during the TSP process, the first-step CO2 plasma treatment could promote the crystallinity of the RTE ITO films. While the electron traps density at grain boundaries of polycrystalline RTE ITO films could be passivated by hydrogen atom during the second-step H2 plasma treatment. These results inspired that the TSP treatment process has significant application prospects owing to the outstanding electrical properties enhancement for "soft-deposited" RTE ITO films.

Tailoring the Electrochemical Properties of Carbon Nanotube Modified Indium Tin Oxide via in Situ Grafting of Aryl Diazonium.

PubMed

Hicks, Jacqueline M; Wong, Zhi Yi; Scurr, David J; Silman, Nigel; Jackson, Simon K; Mendes, Paula M; Aylott, Jonathan W; Rawson, Frankie J

2017-05-23

Our ability to tailor the electronic properties of surfaces by nanomodification is paramount for various applications, including development of sensing, fuel cell, and solar technologies. Moreover, in order to improve the rational design of conducting surfaces, an improved understanding of structure/function relationships of nanomodifications and effect they have on the underlying electronic properties is required. Herein, we report on the tuning and optimization of the electrochemical properties of indium tin oxide (ITO) functionalized with single-walled carbon nanotubes (SWCNTs). This was achieved by controlling in situ grafting of aryl amine diazonium films on the nanoscale which were used to covalently tether SWCNTs. The structure/function relationship of these nanomodifications on the electronic properties of ITO was elucidated via time-of-flight secondary ion mass spectrometry and electrochemical and physical characterization techniques which has led to new mechanistic insights into the in situ grafting of diazonium. We discovered that the connecting bond is a nitro group which is covalently linked to a carbon on the aryl amine. The increased understanding of the surface chemistry gained through these studies enabled us to fabricate surfaces with optimized electron transfer kinetics. The knowledge gained from these studies allows for the rational design and tuning of the electronic properties of ITO-based conducting surfaces important for development of various electronic applications.

Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks

NASA Astrophysics Data System (ADS)

Das, Suprem R.; Sadeque, Sajia; Jeong, Changwook; Chen, Ruiyi; Alam, Muhammad A.; Janes, David B.

2016-06-01

Although transparent conductive oxides such as indium tin oxide (ITO) are widely employed as transparent conducting electrodes (TCEs) for applications such as touch screens and displays, new nanostructured TCEs are of interest for future applications, including emerging transparent and flexible electronics. A number of twodimensional networks of nanostructured elements have been reported, including metallic nanowire networks consisting of silver nanowires, metallic carbon nanotubes (m-CNTs), copper nanowires or gold nanowires, and metallic mesh structures. In these single-component systems, it has generally been difficult to achieve sheet resistances that are comparable to ITO at a given broadband optical transparency. A relatively new third category of TCEs consisting of networks of 1D-1D and 1D-2D nanocomposites (such as silver nanowires and CNTs, silver nanowires and polycrystalline graphene, silver nanowires and reduced graphene oxide) have demonstrated TCE performance comparable to, or better than, ITO. In such hybrid networks, copercolation between the two components can lead to relatively low sheet resistances at nanowire densities corresponding to high optical transmittance. This review provides an overview of reported hybrid networks, including a comparison of the performance regimes achievable with those of ITO and single-component nanostructured networks. The performance is compared to that expected from bulk thin films and analyzed in terms of the copercolation model. In addition, performance characteristics relevant for flexible and transparent applications are discussed. The new TCEs are promising, but significant work must be done to ensure earth abundance, stability, and reliability so that they can eventually replace traditional ITO-based transparent conductors.

G-quadruplex and calf thymus DNA interaction of quaternized tetra and octa pyridyloxy substituted indium (III) phthalocyanines.

PubMed

Bağda, Efkan; Bağda, Esra; Durmuş, Mahmut

2017-10-01

The interactions of small molecules with G-quadruplex and double stranded DNA are important due to their potential biological and medical usages. In the present paper, the interactions of indium (III) phthalocyanines (quaternized 2,3,9,10,16,17,23,24-octakis-[(3-pyridyloxy) phthalocyaninato] chloroindium(III): OInPc and quaternized 2(3),9(10),16(17),23(24)-tetrakis-[(3-pyridyloxy) phthalocyaninato] chloroindium(III): TInPc) with hybrid G-quadruplex (Tel 21) and parallel G-quadruplexes (nucleolin, KRAS, c-MYC, vegf) were studied. The interactions of these phthalocyanines with ctDNA were also investigated. These interactions were measured by different spectroscopic techniques such as UV-Vis, fluorescence and circular dichroism. The UV-Vis spectroscopic data treated with Benesi-Hildebrand equation and Benesi-Hildebrand constants (K BH ) were calculated. These constants were found higher for octa peripheral pyridyloxy substituted phthalocyanine, OInPc. Besides, UV-Vis analysis showed that the interaction of G-quadruplexes with tetra peripheral pyridyloxy substituted phthalocyanine derivative (TInPc) resulted in removal of central indium (III) atom from the cavity of phthalocyanine macrocycle. The UV-Vis melting studies as well as fluorescence replacement techniques were also employed for clarification of mechanism. The binding mode of molecules with ct DNA was also supported with viscosity measurements. From the results, the stabilization and destabilization of G-quadruplex depending on the concentration of the OInPc and TInPc showed that these two indium (III) phthalocyanines have the potential of both the elucidation role of G-quadruplexes in gene expression and the usage in cancer therapy. Copyright © 2017. Published by Elsevier B.V.

Improvement of the electrochromic response of a low-temperature sintered dye-modified porous electrode using low-resistivity indium tin oxide nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Yuichi, E-mail: yuichi.watanabe@aist.go.jp; Suemori, Kouji; Hoshino, Satoshi

2016-06-15

An indium tin oxide (ITO) nanoparticle-based porous electrode sintered at low temperatures was investigated as a transparent electrode for electrochromic displays (ECDs). The electrochromic (EC) response of the dye-modified ITO porous electrode sintered at 150 °C, which exhibited a generally low resistivity, was markedly superior to that of a conventional dye-modified TiO{sub 2} porous electrode sintered at the same temperature. Moreover, the EC characteristics of the dye-modified ITO porous electrode sintered at 150 °C were better than those of the high-temperature (450 °C) sintered conventional dye-modified TiO{sub 2} porous electrode. These improvements in the EC characteristics of the dye-modified ITO porous electrode aremore » attributed to its lower resistivity than that of the TiO{sub 2} porous electrodes. In addition to its sufficiently low resistivity attained under the sintering conditions required for flexible ECD applications, the ITO porous film had superior visible-light transparency and dye adsorption capabilities. We conclude that the process temperature, resistivity, optical transmittance, and dye adsorption capability of the ITO porous electrode make it a promising transparent porous electrode for flexible ECD applications.« less

Recycling of indium from waste LCD: A promising non-crushing leaching with the aid of ultrasonic wave.

PubMed

Zhang, Kaihua; Li, Bin; Wu, Yufeng; Wang, Wei; Li, Rubing; Zhang, Yi-Nan; Zuo, Tieyong

2017-06-01

The tremendous amount of end-of-life liquid crystal displays (LCDs) has become one of the prominent sources of waste electrical and electronic equipment (WEEE) in recent years. Despite the necessity of safe treatment, recycling indium is also a focus of waste LCD treatment because of the scarcity of indium. Based on the analyses of the structure of Indium Tin Oxide (ITO) glass, crushing is demonstrated to be not required. In the present research, a complete non-crushing leaching method was firstly adopted to recycle indium from waste LCDs, and the ultrasonic waves was applied in the leaching process. The results demonstrated that indium can be leached efficiently with even a low concentration of chloride acid (HCl) without extra heating. About 96.80% can be recovered in 60mins, when the ITO glass was leached by 0.8MHCl with an enhancement of 300W ultrasonic waves. The indium leaching process is abridged free from crushing, and proves to be of higher efficiency. In addition, the ultrasonic wave influence on leaching process was also explained combing with micron-scale structure of ITO glass. Copyright © 2017 Elsevier Ltd. All rights reserved.

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO 2 buffer layer-coated polymer substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Yu, Zhi-nong; Zhao, Jian-jian; Xia, Fan; Lin, Ze-jiang; Zhang, Dong-pu; Leng, Jian; Xue, Wei

2011-03-01

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO 2 buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO 2 buffer layer under bending have better electrical stability than those with flat SiO 2 buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO 2 buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO 2 buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO 2, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO 2 buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.

Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

2008-10-01

The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

USGS Publications Warehouse

White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

2017-01-01

Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms.

PubMed

Schmidt, Igor; Gad, Alaaeldin; Scholz, Gregor; Boht, Heidi; Martens, Michael; Schilling, Meinhard; Suryo Wasisto, Hutomo; Waag, Andreas; Schröder, Uwe

2017-08-15

Microbial electrochemical technologies (METs) are one of the emerging green bioenergy domains that are utilizing microorganisms for wastewater treatment or electrosynthesis. Real-time monitoring of bioprocess during operation is a prerequisite for understanding and further improving bioenergy harvesting. Optical methods are powerful tools for this, but require transparent, highly conductive and biocompatible electrodes. Whereas indium tin oxide (ITO) is a well-known transparent conductive oxide, it is a non-ideal platform for biofilm growth. Here, a straightforward approach of surface modification of ITO anodes with gold (Au) is demonstrated, to enhance direct microbial biofilm cultivation on their surface and to improve the produced current densities. The trade-off between the electrode transmittance (critical for the underlying integrated sensors) and the enhanced growth of biofilms (crucial for direct monitoring) is studied. Au-modified ITO electrodes show a faster and reproducible biofilm growth with three times higher maximum current densities and about 6.9 times thicker biofilms compared to their unmodified ITO counterparts. The electrochemical analysis confirms the enhanced performance and the reversibility of the ITO/Au electrodes. The catalytic effect of Au on the ITO surface seems to be the key factor of the observed performance improvement since the changes in the electrode conductivity and their surface wettability are relatively small and in the range of ITO. An integrated platform for the ITO/Au transparent electrode with light-emitting diodes was fabricated and its feasibility for optical biofilm thickness monitoring is demonstrated. Such transparent electrodes with embedded catalytic metals can serve as multifunctional windows for biofilm diagnostic microchips. Copyright © 2017 Elsevier B.V. All rights reserved.

Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures

NASA Astrophysics Data System (ADS)

Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio

2017-06-01

Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al2O3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10-3 Ω cm-1, 11 cm2 V-1 s-1, and 1.62 × 1020 cm-3, resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.

Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures.

PubMed

Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio

2017-06-16

Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO 2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al 2 O 3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10 -3 Ω cm -1 , 11 cm 2 V -1 s -1 , and 1.62 × 10 20 cm -3 , resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.

Preparation of Janus Particles and Alternating Current Electrokinetic Measurements with a Rapidly Fabricated Indium Tin Oxide Electrode Array.

PubMed

Chen, Yu-Liang; Jiang, Hong-Ren

2017-06-23

This article provides a simple method to prepare partially or fully coated metallic particles and to perform the rapid fabrication of electrode arrays, which can facilitate electrical experiments in microfluidic devices. Janus particles are asymmetric particles that contain two different surface properties on their two sides. To prepare Janus particles, a monolayer of silica particles is prepared by a drying process. Gold (Au) is deposited on one side of each particle using a sputtering device. The fully coated metallic particles are completed after the second coating process. To analyze the electrical surface properties of Janus particles, alternating current (AC) electrokinetic measurements, such as dielectrophoresis (DEP) and electrorotation (EROT)- which require specifically designed electrode arrays in the experimental device- are performed. However, traditional methods to fabricate electrode arrays, such as the photolithographic technique, require a series of complicated procedures. Here, we introduce a flexible method to fabricate a designed electrode array. An indium tin oxide (ITO) glass is patterned by a fiber laser marking machine (1,064 nm, 20 W, 90 to 120 ns pulse-width, and 20 to 80 kHz pulse repetition frequency) to create a four-phase electrode array. To generate the four-phase electric field, the electrodes are connected to a 2-channel function generator and to two invertors. The phase shift between the adjacent electrodes is set at either 90° (for EROT) or 180° (for DEP). Representative results of AC electrokinetic measurements with a four-phase ITO electrode array are presented.

Nanostructured copper phthalocyanine-sensitized multiwall carbon nanotube films.

PubMed

Hatton, Ross A; Blanchard, Nicholas P; Stolojan, Vlad; Miller, Anthony J; Silva, S Ravi P

2007-05-22

We report a detailed study of the interaction between surface-oxidized multiwall carbon nanotubes (o-MWCNTs) and the molecular semiconductor tetrasulfonate copper phthalocyanine (TS-CuPc). Concentrated dispersions of o-MWCNT in aqueous solutions of TS-CuPc are stable toward nanotube flocculation and exhibit spontaneous nanostructuring upon rapid drying. In addition to hydrogen-bonding interactions, the compatibility between the two components is shown to result from a ground-state charge-transfer interaction with partial charge transfer from o-MWCNT to TS-CuPc molecules orientated such that the plane of the macrocycle is parallel to the nanotube surface. The electronegativity of TS-CuPc as compared to unsubsubtituted copper phthalocyanine is shown to result from the electron-withdrawing character of the sulfonate substituents, which increase the molecular ionization potential and promote cofacial molecular aggregation upon drying. Upon spin casting to form uniform thin films, the experimental evidence is consistent with an o-MWCNT scaffold decorated with phthalocyanine molecules self-assembled into extended aggregates reminiscent of 1-D linearly stacked phthalocyanine polymers. Remarkably, this self-organization occurs in a fraction of a second during the spin-coating process. To demonstrate the potential utility of this hybrid material, it is successfully incorporated into a model organic photovoltaic cell at the interface between a poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester bulk heterojunction layer and an indium-tin oxide-coated glass electrode to increase the light-harvesting capability of the device and facilitate hole extraction. The resulting enhancement in power conversion efficiency is rationalized in terms of the electronic, optical, and morphological properties of the nanostructured thin film.

Capture and detection of T7 bacteriophages on a nanostructured interface.

PubMed

Han, Jin-Hee; Wang, Min S; Das, Jayanti; Sudheendra, L; Vonasek, Erica; Nitin, Nitin; Kennedy, Ian M

2014-04-09

A highly ordered array of T7 bacteriophages was created by the electrophoretic capture of phages onto a nanostructured array with wells that accommodated the phages. Electrophoresis of bacteriophages was achieved by applying a positive potential on an indium tin oxide electrode at the bottom of the nanowells. Nanoscale arrays of phages with different surface densities were obtained by changing the electric field applied to the bottom of the nanowells. The applied voltage was shown to be the critical factor in generating a well-ordered phage array. The number of wells occupied by a phage, and hence the concentration of phages in a sample solution, could be quantified by using a DNA intercalating dye that rapidly stains the T7 phage. The fluorescence signal was enhanced by the intrinsic photonic effect made available by the geometry of the platform. It was shown that the quantification of phages on the array was 6 orders of magnitude better than could be obtained with a fluorescent plate reader. The device opens up the possibility that phages can be detected directly without enrichment or culturing, and by detecting phages that specifically infect bacteria of interest, rapid pathogen detection becomes possible.

Capture and Detection of T7 Bacteriophages on a Nanostructured Interface

PubMed Central

2015-01-01

A highly ordered array of T7 bacteriophages was created by the electrophoretic capture of phages onto a nanostructured array with wells that accommodated the phages. Electrophoresis of bacteriophages was achieved by applying a positive potential on an indium tin oxide electrode at the bottom of the nanowells. Nanoscale arrays of phages with different surface densities were obtained by changing the electric field applied to the bottom of the nanowells. The applied voltage was shown to be the critical factor in generating a well-ordered phage array. The number of wells occupied by a phage, and hence the concentration of phages in a sample solution, could be quantified by using a DNA intercalating dye that rapidly stains the T7 phage. The fluorescence signal was enhanced by the intrinsic photonic effect made available by the geometry of the platform. It was shown that the quantification of phages on the array was 6 orders of magnitude better than could be obtained with a fluorescent plate reader. The device opens up the possibility that phages can be detected directly without enrichment or culturing, and by detecting phages that specifically infect bacteria of interest, rapid pathogen detection becomes possible. PMID:24650205

The role of cobalt doping on magnetic and optical properties of indium oxide nanostructured thin film prepared by sol–gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baqiah, H.; Ibrahim, N.B., E-mail: baayah@ukm.my; Halim, S.A.

2015-03-15

Highlights: • Cobalt doped indium oxide thin films have been prepared by a sol–gel method. • The films have a thickness less than 100 nm and grain size less than 10 nm. • The lattice parameters and grain size of films decrease as Co content increase. • The optical band gap of films increases as the grain size decrease. • The films' magnetic behaviour is sensitive to ratio of oxygen defects per Co ions. - Abstract: The effect of Co doping concentration, (x = 0.025–0.2), in In{sub 2−x}Co{sub x}O{sub 3} thin film was investigated by X-rays diffraction (XRD), transmission electronmore » microscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet visible spectrophotometer (UV–vis) and vibrating sample magnetometer (VSM). All films were prepared by sol–gel technique followed by spin coating process. The XRD and XPS measurements indicate that Co{sup +2} has been successfully substituted in In{sup +3} site. The TEM measurement shows nanostructure morphology of the films. The doping of Co in indium oxide resulted in a decrease in the lattice parameters and grain size while the band gap increased with increasing Co concentration. Further, by comparing VSM and XPS results, the magnetic behaviour of the films were found to be sensitive to Co concentrations, oxygen vacancies and ratio of oxygen defects to Co concentrations. The magnetic behaviour of the prepared films was explained using bound magnetic polaron (BMP) model.« less

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE PAGES

Zhong, Ruidan; Schneeloch, John; Li, Qiang; ...

2017-02-16

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Ruidan; Schneeloch, John; Li, Qiang

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, Daniel K., E-mail: daniel.simon@namlab.com; Schenk, Tony; Dirnstorfer, Ingo

2016-03-15

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{supmore » −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.« less

Nano-honeycomb structured transparent electrode for enhanced light extraction from organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shi, Xiao-Bo; Qian, Min; Wang, Zhao-Kui; Liao, Liang-Sheng

2015-06-01

A universal nano-sphere lithography method has been developed to fabricate nano-structured transparent electrode, such as indium tin oxide (ITO), for light extraction from organic light-emitting diodes (OLEDs). Perforated SiO2 film made from a monolayer colloidal crystal of polystyrene spheres and tetraethyl orthosilicate sol-gel is used as a template. Ordered nano-honeycomb pits on the ITO electrode surface are obtained by chemical etching. The proposed method can be utilized to form large-area nano-structured ITO electrode. More than two folds' enhancement in both current efficiency and power efficiency has been achieved in a red phosphorescent OLED which was fabricated on the nano-structured ITO substrate.

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide.

PubMed

Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

2018-02-03

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

NASA Astrophysics Data System (ADS)

Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

2018-02-01

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

Atmospheric Deposition of Indium in the Northeastern United States: Flux and Historical Trends.

PubMed

White, Sarah Jane O; Keach, Carrie; Hemond, Harold F

2015-11-03

The metal indium is an example of an increasingly important material used in electronics and new energy technologies, whose environmental behavior and toxicity are poorly understood despite increasing evidence of detrimental health impacts and human-induced releases to the environment. In the present work, the history of indium deposition from the atmosphere is reconstructed from its depositional record in an ombrotrophic bog in Massachusetts. A novel freeze-coring technique is used to overcome coring difficulties posed by woody roots and peat compressibility, enabling retrieval of relatively undisturbed peat cores dating back more than a century. Results indicate that long-range atmospheric transport is a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak fluxes of 1.9 ng/cm2/yr. Atmospheric deposition to the bog began increasing in the late 1800s/early 1900s, and peaked in the early 1970s. A comparison of deposition data with industrial production and emissions estimates suggests that both coal combustion and the smelting of lead, zinc, copper, and tin sulfides are sources of indium to the atmosphere in this region. Deposition appears to have decreased considerably since the 1970s, potentially a visible effect of particulate emissions controls instated in North America during that decade.

Transparent and Flexible Zinc Tin Oxide Thin Film Transistors and Inverters using Low-pressure Oxygen Annealing Process

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Kim, Jiwan; Oh, Min Suk

2018-05-01

We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O2 of 2 Torr at 150° C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of 68% in the visible range and the voltage gain of 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.

Enhancement of conduction noise absorption by hybrid absorbers composed of indium-tin-oxide thin film and magnetic composite sheet on a microstrip line

NASA Astrophysics Data System (ADS)

Kim, Sun-Hong; Kim, Sung-Soo

2014-05-01

In order to develop wide-band noise absorbers with a focused design for low frequency performance, this study investigates hybrid absorbers that are composed of conductive indium-tin-oxide (ITO) thin film and magnetic composite sheets. The ITO films prepared via reactive sputtering exhibit a typical value of electrical resistivity of ≃10-4 Ω m. Rubber composites with flaky Fe-Si-Al particles are used as the magnetic sheet with a high permeability and high permittivity. For the ITO film with a low surface resistance and covered by the magnetic sheet, approximately 90% power absorption can be obtained at 1 GHz, which is significantly higher than that of the original magnetic sheet or ITO film. The high power absorption of the hybrid absorber is attributed to the enhanced ohmic loss of the ITO film through increased electric field strength bounded by the upper magnetic composite sheet. However, for the reverse layering sequence of the ITO film, the electric field experienced by ITO film is very weak due to the electromagnetic shielding by the under layer of magnetic sheet, which does not result in enhanced power absorption.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-10-01

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (˜90% at 405 nm) and low resistivity (˜2 × 10-4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.

Thermodynamic Temperature Measurement to the Indium Point Based on Radiance Comparison

NASA Astrophysics Data System (ADS)

Yamaguchi, Y.; Yamada, Y.

2017-04-01

A multi-national project (the EMRP InK project) was completed recently, which successfully determined the thermodynamic temperatures of several of the high-temperature fixed points above the copper point. The National Metrology Institute of Japan contributed to this project with its newly established absolute spectral radiance calibration capability. In the current study, we have extended the range of thermodynamic temperature measurement to below the copper point and measured the thermodynamic temperatures of the indium point (T_{90} = 429.748 5 K), tin point (505.078 K), zinc point (692.677 K), aluminum point (933.473 K) and the silver point (1 234.93 K) by radiance comparison against the copper point, with a set of radiation thermometers having center wavelengths ranging from 0.65 μm to 1.6 μm. The copper-point temperature was measured by the absolute radiation thermometer which was calibrated by radiance method traceable to the electrical substitution cryogenic radiometer. The radiance of the fixed-point blackbodies was measured by standard radiation thermometers whose spectral responsivity and nonlinearity are precisely evaluated, and then the thermodynamic temperatures were determined from radiance ratios to the copper point. The values of T-T_{90} for the silver-, aluminum-, zinc-, tin- and indium-point cells were determined as -4 mK (U = 104 mK, k=2), -99 mK (88 mK), -76 mK (76 mK), -68 mK (163 mK) and -42 mK (279 mK), respectively.

Nanostructured hematite for photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Ling, Yichuan

Solar water splitting is an environmentally friendly reaction of producing hydrogen gas. Since Honda and Fujishima first demonstrated solar water splitting in 1972 by using semiconductor titanium dioxide (TiO2) as photoanode in a photoelectrochemical (PEC) cell, extensive efforts have been invested into improving the solar-to-hydrogen (STH) conversion efficiency and lower the production cost of photoelectrochemical devices. In the last few years, hematite (alpha-Fe2O3) nanostructures have been extensively studied as photoanodes for PEC water splitting. Although nanostructured hematite can improve its photoelectrochemical water splitting performance to some extent, by increasing active sites for water oxidation and shortening photogenerated hole path length to semiconductor/electrolyte interface, the photoactivity of pristine hematite nanostructures is still limited by a number of factors, such as poor electrical conductivities and slow oxygen evolution reaction kinetics. Previous studies have shown that tin (Sn) as an n-type dopant can substantially enhance the photoactivity of hematite photoanodes by modifying their optical and electrical properties. In this thesis, I will first demonstrate an unintentional Sn-doping method via high temperature annealing of hematite nanowires grown on fluorine-doped tin oxide (FTO) substrate to enhance the donor density. In addition to introducing extrinsic dopants into semiconductors, the carrier densities of hematite can also be enhanced by creating intrinsic defects. Oxygen vacancies function as shallow donors for a number of hematite. In this regard, I have investigated the influence of oxygen content on thermal decomposition of FeOOH to induce oxygen vacancies in hematite. In the end, I have studied low temperature activation of hematite nanostructures.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F.

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitivemore » substrates.« less

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

PubMed

Chuang, Shih-Hao; Tsung, Cheng-Sheng; Chen, Ching-Ho; Ou, Sin-Liang; Horng, Ray-Hua; Lin, Cheng-Yi; Wuu, Dong-Sing

2015-02-04

In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

NASA Astrophysics Data System (ADS)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

DOEpatents

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

NASA Technical Reports Server (NTRS)

Gregory, Otto J.; Cooke, James D.; Bienkiewicz, Joseph M.

1998-01-01

A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage

Hierarchical Si/ZnO trunk-branch nanostructure for photocurrent enhancement

PubMed Central

2014-01-01

Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxide (ZnO) seeding. This method is better compared with other group where they used sputtering method for the same process. The sputtering method only results in the growth of ZnO NRs on top of the Si trunk. Our method shows improvement by having the growth evenly distributed on the lateral sides and caps of the Si trunks, resulting in pine-leave-like NSs. Field emission scanning electron microscope image shows the hierarchical nanostructures resembling the shape of the leaves of pine trees. Single crystalline structure for the ZnO branch grown laterally from the crystalline Si trunk has been identified by using a lattice-resolved transmission electron microscope. A preliminary photoelectrochemical (PEC) cell testing has been setup to characterize the photocurrent of sole array of ZnO NR growth by both hydrothermal-grown (HTG) method and VTC method on ITO substrates. VTC-grown ZnO NRs showed greater photocurrent effect due to its better structural properties. The measured photocurrent was also compared with the array of hierarchical Si/ZnO trunk-branch NSs. The cell with the array of Si/ZnO trunk-branch NSs revealed four-fold magnitude enhancement in photocurrent density compared with the sole array of ZnO NRs obtain from VTC processes. PMID:25246872

Enhanced super-hydrophobic and switching behavior of ZnO nanostructured surfaces prepared by simple solution--immersion successive ionic layer adsorption and reaction process.

PubMed

Suresh Kumar, P; Sundaramurthy, J; Mangalaraj, D; Nataraj, D; Rajarathnam, D; Srinivasan, M P

2011-11-01

A simple and cost-effective successive ionic layer adsorption and reaction (SILAR) method was adopted to fabricate hydrophobic ZnO nanostructured surfaces on transparent indium-tin oxide (ITO), glass and polyethylene terephthalate (PET) substrates. ZnO films deposited on different substrates show hierarchical structures like spindle, flower and spherical shape with diameters ranging from 30 to 300 nm. The photo-induced switching behaviors of ZnO film surfaces between hydrophobic and hydrophilic states were examined by water contact angle and X-ray photoelectron spectroscopy (XPS) analysis. ZnO nanostructured films had contact angles of ~140° and 160°±2 on glass and PET substrates, respectively, exhibiting hydrophobic behavior without any surface modification or treatment. Upon exposure to ultraviolet (UV) illumination, the films showed hydrophilic behavior (contact angle: 15°±2), which upon low thermal stimuli revert back to its original hydrophobic nature. Such reversible and repeatable switching behaviors were observed upon cyclical exposure to ultraviolet radiation. These biomimetic ZnO surfaces exhibit good anti-reflective properties with lower reflectance of 9% for PET substrates. Thus, the present work is significant in terms of its potential application in switching devices, solar coatings and self-cleaning smart windows. Copyright © 2011 Elsevier Inc. All rights reserved.

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

PubMed Central

Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

2014-01-01

Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

2017-01-01

The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.

PubMed

Lim, Kiwon; Choi, Pyungho; Kim, Sangsub; Kim, Hyunki; Kim, Minsoo; Lee, Jeonghyun; Hyeon, Younghwan; Koo, Kwangjun; Choi, Byoungdeog

2018-09-01

Double stacked indium-zinc oxide (IZO)/zinc-tin oxide (ZTO) active layers were employed in amorphous-oxide-semiconductor thin-film transistors (AOS TFTs). Channel layers of the TFTs were optimized by varying the molarity of ZTO back channel layers (0.05, 0.1, 0.2, 0.3 M) and the electrical properties of IZO/ZTO double stacked TFTs were compared to single IZO and ZTO TFTs with varying the molarity and molar ratio. On the basis of the results, IZO/ZTO (0.1 M) TFTs showed the excellent electrical properties of saturation mobility (13.6 cm2/V·s), on-off ratio (7×106), and subthreshold swing (0.223 V/decade) compared to ZTO (0.1 M) of 0.73 cm2/V · s, 1 × 107, 0.416 V/decade and IZO (0.04 M) of 0.10 cm2/V · s, 5 × 106, 0.60 V/decade, respectively. This may be attributed to diffusing Sn into front layer during annealing process. In addition, with varying molarity of ZTO back channel layer, from 0.1 M to 0.3 M ZTO back channel TFTs, electrical properties and positive bias stability deteriorated with increasing molarity of back channel layer because of increasing total trap states. On the other hand, 0.05 M ZTO back channel TFT had inferior electrical properties than that of 0.1 M ZTO back channel TFT. It was related to back channel effect because of having thin thickness of channel layer. Among these devices, 0.1 M ZTO back channel TFT had a lowest total trap density, outstanding electrical properties and stability. Therefore, we recommended IZO/ZTO (0.1 M) TFT as a promising channel structure for advanced display applications.

Effect of organic solar cells using various power O2 plasma treatments on the indium tin oxide substrate.

PubMed

Ke, Jhong-Ciao; Wang, Yeong-Her; Chen, Kan-Lin; Huang, Chien-Jung

2016-03-01

The effect of organic solar cells (OSCs) by using different power O2 plasma treatments on indium tin oxide (ITO) substrate was studied. The power of O2 plasma treatment on ITO substrate was varied from 20W to 80W, and the power conversion efficiency of device was improved from 1.18% to 1.93% at 20W O2 plasma treatment. The function of O2 plasma treatment on ITO substrate was to remove the surface impurity and to improve the work function of ITO, which can reduce the energy offset between the ITO and SubPc layer and depress the leakage current of device, leading to the shunt resistance increased from 897 to 1100Ωcm(2). The surface roughness of ITO decreased from 3.81 to 3.33nm and the work function of ITO increased from 4.75 to 5.2eV after 20W O2 plasma treatment on ITO substrate. As a result, the open circuit voltage and the fill factor were improved from 0.46 to 0.70V and from 0.56 to 0.61, respectively. However, the series resistance of device was dramatically increased as the power of O2 plasma treatment exceeds 40W, leading to the efficiency reduction. The result is attributed to the variation of oxygen vacancies in ITO film after the 60, 80W O2 plasma treatment. As a consequence, the power of O2 plasma treatment on ITO substrate for the OSCs application should be controlled below 40W to avoid affecting the electricity of ITO film. Copyright © 2015 Elsevier Inc. All rights reserved.

Tin

USGS Publications Warehouse

Kamilli, Robert J.; Kimball, Bryn E.; Carlin, James F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Tin (Sn) is one of the first metals to be used by humans. Almost without exception, tin is used as an alloy. Because of its hardening effect on copper, tin was used in bronze implements as early as 3500 B.C. The major uses of tin today are for cans and containers, construction materials, transportation materials, and solder. The predominant ore mineral of tin, by far, is cassiterite (SnO2).In 2015, the world’s total estimated mine production of tin was 289,000 metric tons of contained tin. Total world reserves at the end of 2016 were estimated to be 4,700,000 metric tons. China held about 24 percent of the world’s tin reserves and accounted for 38 percent of the world’s 2015 production of tin.The proportion of scrap used in tin production is between 10 and 25 percent. Unlike many metals, tin recycling is relatively efficient, and the fraction of tin in discarded products that get recycled is greater than 50 percent.Only about 20 percent of the world’s identified tin resources occur as primary hydrothermal hard-rock veins, or lodes. These lodes contain predominantly high-temperature minerals and almost invariably occur in close association with silicic, peraluminous granites. About 80 percent of the world’s identified tin resources occur as unconsolidated secondary or placer deposits in riverbeds and valleys or on the sea floor. The largest concentration of both onshore and offshore placers is in the extensive tin belt of Southeast Asia, which stretches from China in the north, through Thailand, Burma (also referred to as Myanmar), and Malaysia, to the islands of Indonesia in the south. Furthermore, tin placers are almost always found closely allied to the granites from which they originate. Other countries with significant tin resources are Australia, Bolivia, and Brazil.Most hydrothermal tin deposits belong to what can be thought of as a superclass of porphyry-greisen deposits. The hydrothermal tin deposits are all characterized by a close spatial

Conductive indium-tin oxidenanowire and nanotube arrays made by electrochemically assisted deposition in template membranes: switching between wire and tube growth modes by surface chemical modification of the template

NASA Astrophysics Data System (ADS)

Kovtyukhova, Nina I.; Mallouk, Thomas E.

2011-04-01

Tin-doped indium hydroxide (InSnOH) nanowires (NWs) and nanotubes (NTs) were grown from acidic aqueous solutions of inorganic precursors in a simple one-step electrochemically assisted deposition (EAD) process inside Au-plugged anodic aluminium oxide and polycarbonatemembranes. When the membranes were used without any pre-treatment, InSnOH crystals nucleated on the both the Au-cathode and pore wall surfaces. By adjusting the surface chemistry of Au or the pore walls, it was possible to switch between NW and NT growth modes. InSnOH was converted into indiumtin oxide (ITO) by annealing the InSnOH-filled membranes at 300 °C. The resulting wires and tubes were characterized by field emission scanning electron microscopy, transmission electron microscopy, X-ray and electron diffraction, Auger electron spectroscopy and electrical conductivity measurements. InSnOH and ITO NWs and NTs consisted of ~25-50 nm in size crystalline grains with the cubic crystal structures of In(OH)3 and In2O3, respectively, and showed essentially the same morphological features as planar ITO films made by the same method. Separate tin oxide/hydroxide phases were not observed by any of the characterization methods. After heating in air at 600 °C, the ITO NWs had resistivity on the order of 10°Ω cm. EAD is an inexpensive and scalable solution-based technique, and allows one to grow dense arrays of vertically aligned, crystalline and conductive ITO NWs and NTs.

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

DOEpatents

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

2011-11-15

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

Biocompatible nanostructured magnesium oxide-chitosan platform for genosensing application.

PubMed

Patel, Manoj Kumar; Ali, Md Azahar; Zafaryab, Md; Agrawal, Ved Varun; Rizvi, M Moshahid Alam; Ansari, Z A; Ansari, S G; Malhotra, Bansi D

2013-07-15

A novel organic-inorganic platform comprising of chitosan (CH) modified nanostructured magnesium oxide (nanoMgO) has been electrophoretically deposited on the indium-tin-oxide (ITO) substrate. The single stranded probe DNA (ssDNA) sequence of Vibrio cholerae has been covalently functionalized onto CH-nanoMgO/ITO surface. The cytotoxicity assay of nanoMgO particles, examined using human intestinal cell line (INT 407), reveals no significant cytotoxicity at the given doses in the range of 50-350 μg/mL. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and various microscopic techniques have been employed for the structural and morphological analysis of the fabricated electrodes. The electrochemical response studies of ssDNA and fragmented genomic DNA hybridized electrode (dsGDNA/CH-nanoMgO/ITO) have been carried out using cyclic voltammetry (CV) and differential pulse voltammetry (DPV) techniques. The dsGDNA/CH-nanoMgO/ITO bioelectrode exhibits a linear response in the range 100-500 ng/μL with improved sensitivity of 36.72 nA/ng/cm(2), faster response time of 3s and high stability of 3-4 months under refrigerated condition. The lower detection limit of fabricated genosensor has been estimated as 35.20 ng/μL and it shows good reproducibility/repeatability. Copyright © 2013 Elsevier B.V. All rights reserved.

Engineering a Large Scale Indium Nanodot Array for Refractive Index Sensing.

PubMed

Xu, Xiaoqing; Hu, Xiaolin; Chen, Xiaoshu; Kang, Yangsen; Zhang, Zhiping; B Parizi, Kokab; Wong, H-S Philip

2016-11-23

In this work, we developed a simple method to fabricate 12 × 4 mm 2 large scale nanostructure arrays and investigated the feasibility of indium nanodot (ND) array with different diameters and periods for refractive index sensing. Absorption resonances at multiple wavelengths from the visible to the near-infrared range were observed for various incident angles in a variety of media. Engineering the ND array with a centered square lattice, we successfully enhanced the sensitivity by 60% and improved the figure of merit (FOM) by 190%. The evolution of the resonance dips in the reflection spectra, of square lattice and centered square lattice, from air to water, matches well with the results of Lumerical FDTD simulation. The improvement of sensitivity is due to the enhancement of local electromagnetic field (E-field) near the NDs with centered square lattice, as revealed by E-field simulation at resonance wavelengths. The E-field is enhanced due to coupling between the two square ND arrays with [Formula: see text]x period at phase matching. This work illustrates an effective way to engineer and fabricate a refractive index sensor at a large scale. This is the first experimental demonstration of poor-metal (indium) nanostructure array for refractive index sensing. It also demonstrates a centered square lattice for higher sensitivity and as a better basic platform for more complex sensor designs.

The performance of hematite nanostructures in different humidity levels

NASA Astrophysics Data System (ADS)

Ahmad, W. R. W.; Mamat, M. H.; Zoolfakar, A. S.; Khusaimi, Z.; Yusof, M. M.; Ismail, A. S.; Saidi, S. A.; Rusop, M.

2018-05-01

In this study, hematite (α-Fe2O3) nanostructure were prepared in Schott vials on fluorine-doped tin oxide (FTO) coated glass substrate using the sonicated immersion method in aqueous solution with ferric chloride FeCl3ṡ6H2O as a precursor and urea NH2-CONH2 as a stabilizer. The samples were characterized for different level of humidity conditions within range 40% to 90% RH. Based on the results obtained, the hematite nanostructure exhibited good optical properties and virtuous sensor response with high sensitivity. The fabricated hematite nanostructure has revealed a good potential for humidity sensor application based on the results obtained under different levels of humidity.

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles as in vitro Correlates to Pulmonary Toxicity in vivo

PubMed Central

Gwinn, William M.; Qu, Wei; Bousquet, Ronald W.; Price, Herman; Shines, Cassandra J.; Taylor, Genie J.; Waalkes, Michael P.; Morgan, Daniel L.

2015-01-01

Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP. PMID:25527823

Thermoelectric properties of nano-granular indium-tin-oxide within modified electron filtering model with chemisorption-type potential barriers

NASA Astrophysics Data System (ADS)

Brinzari, V.; Nika, D. L.; Damaskin, I.; Cho, B. K.; Korotcenkov, G.

2016-07-01

In this work, an approach to the numerical study of the thermoelectric parameters of nanoscale indium tin oxide (ITO, Sn content<10 at%) based on an electron filtering model (EFM) was developed. Potential barriers at grain boundaries were assumed to be responsible for a filtering effect. In the case of the dominant inelastic scattering of electrons, the maximal distance between potential barriers was limited in this modified model. The algorithm for such characteristic length calculation was proposed, and its value was evaluated for ITO. In addition, the contributions of different scattering mechanisms (SMs) in electron transport were examined. It was confirmed that in bulk ITO, the scattering on polar optical phonons (POPs) and ionized impurities dominates, limiting electron transport. In the framework of the filtering model, the basic thermoelectric parameters (i.e., electrical conductivity, mobility, Seebeck coefficient, and power factor (PF)) were calculated for ITO in the temperature range of 100-500 °C as a function of potential barrier height. The results demonstrated a sufficient rise of the Seebeck coefficient with an increase in barrier height and specific behavior of PF. It was found that PF is very sensitive to barrier height, and at its optimal value for granular ITO, it may exceed the PF for bulk ITO by 3-5 times. The PF maximum was achieved by band bending, slightly exceeding Fermi energy. The nature of surface potential barriers in nano-granular ITO with specific grains is due to the oxygen chemisorption effect, and this can be observed despite of the degeneracy of the conduction band (CB). This hypothesis and the corresponding calculations are in good agreement with recent experimental studies [Brinzari et al. Thin Solid Films 552 (2014) 225].

Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics

NASA Astrophysics Data System (ADS)

Yokokura, Yuya; Dogase, Tomomichi; Shinbo, Tatsuki; Nakayashiki, Yuya; Takagi, Yusuke; Ueda, Kazuyoshi; Sarangerel, Khayankhyarvaa; Delgertsetseg, Byambasuren; Ganzorig, Chimed; Sakomura, Masaru

2017-08-01

The use of Langmuir-Blodgett (LB) monolayers to modify the indium tin oxide (ITO) work function and thus improve the performance of zinc phthalocyanine (ZnPc)/fullerene (C60)-based and boron subphthalocyanine chloride (SubPc)/C60-based small molecule organic photovoltaic devices (OPVs) was examined. In general, LB precursor compounds contain one or more long alkyl chain substituents that can act as spacers to prevent electrical contact with adjoining electrode surfaces. As one example of such a compound, arachidic acid (CH3(CH2)18COOH) was inserted in the forms of one-layer, three-layer or five-layer LB films between the anode ITO layer and the p-type layer in ZnPc-C60-based OPVs to investigate the effects of the long alkyl chain group when it acts as an electrically insulating spacer. The short-circuit current density (Jsc) values of the OPVs with the three- and five-layer inserts (1.78 mA.cm-2 and 0.61 mA.cm-2, respectively) were reduced dramatically, whereas the Jsc value for the OPV with the single-layer insertion (2.88 mA.cm-2) was comparable to that of the OPV without any insert (3.14 mA.cm-2). The ITO work function was shifted positively by LB deposition of a surfactant compound, C9F19C2H4-O-C2H4-COOH (PFECA), which contained a fluorinated head group. This positive effect was maintained even after formation of an upper p-type organic layer. The Jsc and open-circuit voltage (Voc) of the SubPc-C60-based OPV with the LB-modified ITO layers were effectively enhanced. As a result, a 42% increase in device efficiency was achieved.

Picosecond laser fabrication of nanostructures on ITO film surface assisted by pre-deposited Au film

NASA Astrophysics Data System (ADS)

Yang, H. Z.; Jiang, G. D.; Wang, W. J.; Mei, X. S.; Pan, A. F.; Zhai, Z. Y.

2017-10-01

With greater optical penetration depth and lower ablation threshold fluence, it is difficult to directly fabricate large scales of laser-induced periodic surface structures (LIPSSs) on indium-tin-oxide (ITO) films. This study proposed an approach to obtain optimized LIPSSs by sputtering an Au thin film on the ITO film surface. The concept behind the proposal is that the upper layer of the thin Au film can cause surface energy aggregation, inducing the initial ripple structures. The ripples deepened and become clear with lower energy due to optical trapping. The effective mechanism of Au film was analyzed and verified by a series of experiments. Linear sweep, parallel to the laser polarization direction, was performed using a Nd:VAN laser system with 10-ps Q-switched pulse, at a central wavelength of 532 nm, with a repetition rate of 1 kHz. The complete and clear features of the nanostructures, obtained with the periods of approximately 320 nm, were observed on ITO films with proper laser fluence and scanning speed. The depth of ripples was varying in the range of 15-65 nm with clear and coherent ITO films. The preferred efficiency of fabricating nanostructures and the excellent results were obtained at a scanning speed of 2.5 mm/s and a fluence of 0.189 J/cm2. In this way, the ablation and shedding of ITO films was successfully avoided. Thus, the proposed technique can be considered to be a promising method for the laser machining of special nonmetal films.

Improving the efficiency of cadmium sulfide-sensitized titanium dioxide/indium tin oxide glass photoelectrodes using silver sulfide as an energy barrier layer and a light absorber

PubMed Central

2014-01-01

Cadmium sulfide (CdS) and silver sulfide (Ag2S) nanocrystals are deposited on the titanium dioxide (TiO2) nanocrystalline film on indium tin oxide (ITO) substrate to prepare CdS/Ag2S/TiO2/ITO photoelectrodes through a new method known as the molecular precursor decomposition method. The Ag2S is interposed between the TiO2 nanocrystal film and CdS nanocrystals as an energy barrier layer and a light absorber. As a consequence, the energy conversion efficiency of the CdS/Ag2S/TiO2/ITO electrodes is significantly improved. Under AM 1.5 G sunlight irradiation, the maximum efficiency achieved for the CdS(4)/Ag2S/TiO2/ITO electrode is 3.46%, corresponding to an increase of about 150% as compared to the CdS(4)/TiO2/ITO electrode without the Ag2S layer. Our experimental results show that the improved efficiency is mainly due to the formation of Ag2S layer that may increase the light absorbance and reduce the recombination of photogenerated electrons with redox ions from the electrolyte. PMID:25411566

The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

NASA Astrophysics Data System (ADS)

Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

2014-03-01

Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

Nanoengineering of 2D tin sulfide nanoflake arrays incorporated on polyaniline nanofibers with boosted capacitive behavior

NASA Astrophysics Data System (ADS)

Wang, Huanhuan; Chao, DongLiang; Liu, Jilei; Lin, Jianyi; Shen, Ze Xiang

2018-07-01

Nanoscale engineering plays an important role in designing novel electrode architecture and boosting energy storage in supercapacitors. Herein, we demonstrate the fabrication of freestanding tin sulfide based supercapacitor electrode using facile nucleation substrate control, i.e. polyaniline network. This is the first time that tin sulfide based material is fabricated as a binder-free electrode for supercapacitors. The first combination of tin sulfide and polyaniline also evokes synergistic effect to enhance the performance as the polyaniline nanofibers facilitate the growth of tin sulfide flakes in nanosize which is further proved helpful for improving the capacity and stability of the electrode. The as-obtained electrode of tin sulfide nanoflake arrays incorporated on polyaniline nanofibers (365 F g‑1 at 10 mV s‑1) exhibits superior electrochemical performance compared with micro-scaled tin sulfide (32 F g‑1 at 10 mV s‑1). The significantly improved pseudocapacitive and diffusive contributions of polyaniline nanofibers incorporated electrode are identified by quantitative kinetics analysis due to greatly decreased particle size and introduced mesopores, nanoclusters, and exposed edges. Profited from effective nanostructure engineering, a Na+ intercalation mechanism is also pointed out in boosting the electrochemical performance.

The annealing investigation on morphology and photoluminescence properties of In2O3 1-D nanostructures in resistive evaporation mechanism

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Ghafouri, Vahid

2014-02-01

Synthesis of In2O3 nanostructures grown on Si substrate by the resistive evaporation of metallic indium granules followed by dry oxidation process has been articulated. To prepare nucleation growth sites, selected samples pre-annealed around indium melting point in free-oxygen atmosphere and then to fabricate 1-D nanostructures, they annealed in a horizontal thermal furnace in presence of argon and oxygen. For comparison, one sample, the same origin as initially pre-annealed samples, was excluded in pre-annealing process but presented in annealing step. Characterization of the products with FESEM revealed that the pre-annealed obtained nanostructures are mostly nanorod and nanowire with different morphologies. For the comparative sample, no 1-D structures achieved. X-ray diffraction (XRD) patterns for pre-annealed samples indicated that they are crystalline and the comparative one is polycrystalline. Photoluminescence (PL) measurements carried out at room temperature revealed that emission band shifted to shorter wavelength from pre-annealed samples to comparative one.

Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

NASA Astrophysics Data System (ADS)

Kalkan, N.

2016-10-01

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.

78 FR 69417 - Proposed Data Collections Submitted for Public Comment and Recommendations

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-19

... days of this notice. Proposed Project An Investigation of Lung Health at an Indium-Tin Oxide Production... conduct a study regarding the lung health of workers at an indium-tin oxide production facility. Indium-tin oxide (ITO) is a sintered material used in the manufacture of devices such as liquid crystal...

Toward Plastic Smart Windows: Optimization of Indium Tin Oxide Electrodes for the Synthesis of Electrochromic Devices on Polycarbonate Substrates.

PubMed

Laurenti, Marco; Bianco, Stefano; Castellino, Micaela; Garino, Nadia; Virga, Alessandro; Pirri, Candido F; Mandracci, Pietro

2016-03-01

Plastic smart windows are becoming one of the key elements in view of the fabrication of inexpensive, lightweight electrochromic (EC) devices to be integrated in the new generation of high-energy-efficiency buildings and automotive applications. However, fabricating electrochromic devices on polymer substrates requires a reduction of process temperature, so in this work we focus on the development of a completely room-temperature deposition process aimed at the preparation of ITO-coated polycarbonate (PC) structures acting as transparent and conductive plastic supports. Without providing any substrate heating or surface activation pretreatments of the polymer, different deposition conditions are used for growing indium tin oxide (ITO) thin films by the radiofrequency magnetron sputtering technique. According to the characterization results, the set of optimal deposition parameters is selected to deposit ITO electrodes having high optical transmittance in the visible range (∼90%) together with low sheet resistance (∼8 ohm/sq). The as-prepared ITO/PC structures are then successfully tested as conductive supports for the fabrication of plastic smart windows. To this purpose, tungsten trioxide thin films are deposited by the reactive sputtering technique on the ITO/PC structures, and the resulting single electrode EC devices are characterized by chronoamperometric experiments and cyclic voltammetry. The fast switching response between colored and bleached states, together with the stability and reversibility of their electrochromic behavior after several cycling tests, are considered to be representative of the high quality of the EC film but especially of the ITO electrode. Indeed, even if no adhesion promoters, additional surface activation pretreatments, or substrate heating were used to promote the mechanical adhesion among the electrode and the PC surface, the observed EC response confirmed that the developed materials can be successfully employed for the

Three-dimensional nanostructure determination from a large diffraction data set recorded using scanning electron nanodiffraction.

PubMed

Meng, Yifei; Zuo, Jian-Min

2016-09-01

A diffraction-based technique is developed for the determination of three-dimensional nanostructures. The technique employs high-resolution and low-dose scanning electron nanodiffraction (SEND) to acquire three-dimensional diffraction patterns, with the help of a special sample holder for large-angle rotation. Grains are identified in three-dimensional space based on crystal orientation and on reconstructed dark-field images from the recorded diffraction patterns. Application to a nanocrystalline TiN thin film shows that the three-dimensional morphology of columnar TiN grains of tens of nanometres in diameter can be reconstructed using an algebraic iterative algorithm under specified prior conditions, together with their crystallographic orientations. The principles can be extended to multiphase nanocrystalline materials as well. Thus, the tomographic SEND technique provides an effective and adaptive way of determining three-dimensional nanostructures.

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Na, Jin-Young; Kim, Sun-Kyung; Kang, Daesung; Seong, Tae-Yeon

2017-01-01

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

The Laser-Assisted Field Effect Transistor Gas Sensor Based on Morphological Zinc-Excited Tin-Doped In2O3 Nanowires

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Khosravinejad, Fariba

The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Synthesis and processing of nanostructured BN and BN/Ti composites

NASA Astrophysics Data System (ADS)

Horvath, Robert Steven

Superhard materials, such as cubic-BN, are widely used in machine tools, grinding wheels, and abrasives. Low density combined with high hardness makes c-BN and its composites attractive candidate materials for personnel and vehicular armor. However, improvements in toughness, and ballistic-impact performance, are needed to meet anticipated performance requirements. To achieve such improvements, we have targeted for development nanostructured c-BN, and its composites with Ti. Current research utilizes an experimental high pressure/high temperature (HPHT) method to produce these materials on a laboratory scale. Results from this work should transfer well into the industrial arena, utilizing high-tonnage presses used in the production of synthetic diamond and c-BN. Progress has been made in: (1) HPHT synthesis of cBN powder using Mg as catalyst; (2) HPHT consolidation of cBN powder to produce nanostructured cBN; (3) reactive-HPHT consolidation of mixed cBN/Ti powder to produce nanostructured Ti- or TiB2/TiN-bonded cBN; and (4) reactive-HPHT consolidation of mixed hBN/Ti powder to produce nanostructured Ti-bonded TiB2/TiN or TiB2/TiN. Even so, much remains to be done to lay a firm scientific foundation to enable the reproducible fabrication of large-area panels for armor applications. To this end, Rutgers has formed a partnership with a major producer of hard and superhard materials. The ability to produce hard and superhard nanostructured composites by reacting cBN or hBN with Ti under high pressure also enables multi-layered structures to be developed. Such structures may be designed to satisfy impedance-mismatch requirements for high performance armor, and possibly provide a multi-hit capability. A demonstration has been made of reactive-HPHT processing of multi-layered composites, consisting of alternating layers of superhard Ti-bonded cBN and tough Ti. It is noteworthy that the pressure requirements for processing Ti-bonded cBN, Ti-bonded TiB2/TiN, and their

Single-Stroke Synthesis of Tin Sulphide/Oxide Nanocomposites Within Engineering Thermoplastic and Their Humidity Response.

PubMed

Adkar, Dattatraya; Adhyapak, Parag; Mulik, Uttamrao; Jadkar, Sandesh; Vutova, Katia; Amalnerkar, Dinesh

2018-05-01

SnS nanostructured materials have attracted enormous interest due to their important properties and potential application in low cost solar energy conversion systems and optical devices. From the perspective of SnS based device fabrication, we offer single-stroke in-situ technique for the generation of Sn based sulphide and oxide nanostructures inside the polymer network via polymer-inorganic solid state reaction route. In this method, polyphenylene sulphide (PPS)-an engineering thermoplastic-acts as chalcogen source as well as stabilizing matrix for the resultant nano products. Typical solid state reaction was accomplished by simply heating the physical admixtures of the tin salts (viz. tin acetate/tin chloride) with PPS at the crystalline melting temperature (285 °C) of PPS in inert atmosphere. The synthesized products were characterized by using various physicochemical characterization techniques. The prima facie observations suggest the concurrent formation of nanocrystalline SnS with extraneous oxide phase. The TEM analysis revealed formation of nanosized particles of assorted morphological features with polydispersity confined to 5 to 50 nm. However, agglomerated particles of nano to submicron size were also observed. The humidity sensing characterization of these nanocomposites was also performed. The resistivity response with the level of humidity (20 to 85% RH) was compared for these nanocomposites. The linear response was obtained for both the products. Nevertheless, the nanocomposite product obtained from acetate precursor showed higher sensitivity towards the humidity than that of one prepared from chloride precursor.

Three-dimensional nanostructure determination from a large diffraction data set recorded using scanning electron nanodiffraction

DOE PAGES

Meng, Yifei; Zuo, Jian -Min

2016-07-04

A diffraction-based technique is developed for the determination of three-dimensional nanostructures. The technique employs high-resolution and low-dose scanning electron nanodiffraction (SEND) to acquire three-dimensional diffraction patterns, with the help of a special sample holder for large-angle rotation. Grains are identified in three-dimensional space based on crystal orientation and on reconstructed dark-field images from the recorded diffraction patterns. Application to a nanocrystalline TiN thin film shows that the three-dimensional morphology of columnar TiN grains of tens of nanometres in diameter can be reconstructed using an algebraic iterative algorithm under specified prior conditions, together with their crystallographic orientations. The principles can bemore » extended to multiphase nanocrystalline materials as well. Furthermore, the tomographic SEND technique provides an effective and adaptive way of determining three-dimensional nanostructures.« less

Practical and highly sensitive elemental analysis for aqueous samples containing metal impurities employing electrodeposition on indium-tin oxide film samples and laser-induced shock wave plasma in low-pressure helium gas.

PubMed

Kurniawan, Koo Hendrik; Pardede, Marincan; Hedwig, Rinda; Abdulmadjid, Syahrun Nur; Lahna, Kurnia; Idris, Nasrullah; Jobiliong, Eric; Suyanto, Hery; Suliyanti, Maria Margaretha; Tjia, May On; Lie, Tjung Jie; Lie, Zener Sukra; Kurniawan, Davy Putra; Kagawa, Kiichiro

2015-09-01

We have conducted an experimental study exploring the possible application of laser-induced breakdown spectroscopy (LIBS) for practical and highly sensitive detection of metal impurities in water. The spectrochemical measurements were carried out by means of a 355 nm Nd-YAG laser within N₂ and He gas at atmospheric pressures as high as 2 kPa. The aqueous samples were prepared as thin films deposited on indium-tin oxide (ITO) glass by an electrolysis process. The resulting emission spectra suggest that concentrations at parts per billion levels may be achieved for a variety of metal impurities, and it is hence potentially feasible for rapid inspection of water quality in the semiconductor and pharmaceutical industries, as well as for cooling water inspection for possible leakage of radioactivity in nuclear power plants. In view of its relative simplicity, this LIBS equipment offers a practical and less costly alternative to the standard use of inductively coupled plasma-mass spectrometry (ICP-MS) for water samples, and its further potential for in situ and mobile applications.

Tin recovery from tin slag using electrolysis method

NASA Astrophysics Data System (ADS)

Jumari, Arif; Purwanto, Agus; Nur, Adrian; Budiman, Annata Wahyu; Lerian, Metty; Paramita, Fransisca A.

2018-02-01

The process in industry, including in mining industry, would surely give negative effect such as waste polluting to the environment. Some of waste could be potentially reutilized to be a commodity with the higher economic value. Tin slag is one of them. The aim of this research was to recover the tin contained in tin slag. Before coming to the electrolysis, tin slag must be treated by dissolution. The grinded tin slag was dissolved into HCl solution to form a slurry. During dissolution, the slurry was agitated and heated, and finally filtered. The filtrate obtained was then electrolyzed. During the process of electrolysis, solid material precipitated on the used cathode. The precipitated solid was then separated and dried. The solid was then analyzed using XRD, XRF and SEM. The XRD analysis showed that the longest time of dissolution and electrolysis the highest the purity obtained in the product. The SEM analysis showed that the longest time of electrolysis the smallest tin particle obtained. Optimum time achieved in this research was 2 hours for the recovering time and 3 hours for the electrolysis time, with 9% tin recovered.

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe

Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightlymore » improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.« less

Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

NASA Astrophysics Data System (ADS)

Wang, Hong-Wen; Ting, Chi-Feng; Hung, Miao-Ken; Chiou, Chwei-Huann; Liu, Ying-Ling; Liu, Zongwen; Ratinac, Kyle R.; Ringer, Simon P.

2009-02-01

Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO2 layers onto the ITO or ITO/TiO2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO2 core-shell nanowires or pristine TiO2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

Superlative TINs

NASA Technical Reports Server (NTRS)

Chamberlin, R.

2002-01-01

TIN is short for 'triangulated irregular network,' which is a piecewise planar model of a surface. If properly constructed, a TIN can be more than 30 times as efficient as a regular triangulation. In our project (a ground combat simulation to support U.S. Army training exercises), the TIN is used to represent the Earth's surface and is used primarily to determine whether line of sight is blocked by terrain. High efficiency requires accurate identification of ridgelines with as few triangles as possible. The work currently in progress is the implementation of a TINning process that we hope will produce superlative TINs. This presentation describes that process.

Controlled On-chip Stimulation of Quantal Catecholamine Release from Chromaffin Cells Using Photolysis of Caged Ca2+ on Transparent Indium-Tin-Oxide Microchip Electrodes

PubMed Central

Chen, Xiaohui; Gao, Yuanfang; Hossain, Maruf; Gangopadhyay, Shubhra; Gillis, Kevin D.

2008-01-01

Photorelease of caged Ca2+ is a uniquely powerful tool to study the dynamics of Ca2+-triggered exocytosis from individual cells. Using photolithography and other microfabrication techniques, we have developed transparent microchip devices to enable photorelease of caged Ca2+ together with electrochemical detection of quantal catecholamine secretion from individual cells or cell arrays as a step towards developing high-throughput experimental devices. A 100 nm - thick transparent Indium-Tin-Oxide (ITO) film was sputter-deposited onto glass coverslips, which were then patterned into 24 cell-sized working electrodes (∼20 μm by 20 μm). We loaded bovine chromaffin cells with acetoxymethyl (AM) ester derivatives of the Ca2+ cage NP-EGTA and Ca2+ indicator dye Fura-4F, then transferred these cells onto the working ITO electrodes for amperometric recordings. Upon flash photorelease of caged Ca2+, a uniform rise of [Ca2+]i within the target cell leads to quantal release of oxidizable catecholamines measured amperometrically by the underlying ITO electrode. We observed a burst of amperometric spikes upon rapid elevation of [Ca2+]i and a “priming” effect of sub-stimulatory [Ca2+]i on the response of cells to subsequent [Ca2+]i elevation, similar to previous reports using different techniques. We conclude that UV photolysis of caged Ca2+ is a suitable stimulation technique for higher-throughput studies of Ca2+-dependent exocytosis on transparent electrochemical microelectrode arrays. PMID:18094774

Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes.

PubMed

Kwon, Junyeon; Hong, Young Ki; Kwon, Hyuk-Jun; Park, Yu Jin; Yoo, Byungwook; Kim, Jiwan; Grigoropoulos, Costas P; Oh, Min Suk; Kim, Sunkook

2015-01-21

We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS2 and IZO, the n-type behavior with a field-effect mobility (μ(eff)) of 1.4 cm(2) V(-1) s(-1) was observed in as-fabricated transparent MoS2 TFT. In order to enhance the performances of transparent MoS2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, μ(eff) increased to 4.5 cm(2) V(-1) s(-1), and the on-off current ratio (I(on)/I(off)) increased to 10(4), which were attributed to the reduction of the contact resistance between MoS2 and IZO.

Technologies for Trapped-Ion Quantum Information Systems

DTIC Science & Technology

2016-03-21

mate- rials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and...trapping techniques. Keywords ion traps · quantum computation · quantum information · trapped ions · ion-photon interface · graphene · indium tin oxide...displays are typically made of indium tin oxide (ITO), a material that is both an elec- trical and an optical conductor. However, using ITO electrodes

Facile synthesis of one dimensional ZnO nanostructures for DSSC applications

NASA Astrophysics Data System (ADS)

Marimuthu, T.; Anandhan, N.

2016-05-01

Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.

Phase diagram and structural evolution of tin/indium (Sn/In) nanosolder particles: from a non-equilibrium state to an equilibrium state.

PubMed

Shu, Yang; Ando, Teiichi; Yin, Qiyue; Zhou, Guangwen; Gu, Zhiyong

2017-08-31

A binary system of tin/indium (Sn/In) in the form of nanoparticles was investigated for phase transitions and structural evolution at different temperatures and compositions. The Sn/In nanosolder particles in the composition range of 24-72 wt% In were synthesized by a surfactant-assisted chemical reduction method under ambient conditions. The morphology and microstructure of the as-synthesized nanoparticles were analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). HRTEM and SAED identified InSn 4 and In, with some Sn being detected by XRD, but no In 3 Sn was observed. The differential scanning calorimetry (DSC) thermographs of the as-synthesized nanoparticles exhibited an endothermic peak at around 116 °C, which is indicative of the metastable eutectic melting of InSn 4 and In. When the nanosolders were subjected to heat treatment at 50-225 °C, the equilibrium phase In 3 Sn appeared while Sn disappeared. The equilibrium state was effectively attained at 225 °C. A Tammann plot of the DSC data of the as-synthesized nanoparticles indicated that the metastable eutectic composition is about 62% In, while that of the DSC data of the 225 °C heat-treated nanoparticles yielded a eutectic composition of 54% In, which confirmed the attainment of the equilibrium state at 225 °C. The phase boundaries estimated from the DSC data of heat-treated Sn/In nanosolder particles matched well with those in the established Sn-In equilibrium phase diagram. The phase transition behavior of Sn/In nanosolders leads to a new understanding of binary alloy particles at the nanoscale, and provides important information for their low temperature soldering processing and applications.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires.

PubMed

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

2017-09-14

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

Plasmonic transparent conductors

NASA Astrophysics Data System (ADS)

Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

2016-09-01

Many of today's technological applications, such as solar cells, light-emitting diodes, displays, and touch screens, require materials that are simultaneously optically transparent and electrically conducting. Here we explore transparent conductors based on the excitation of surface plasmons in nanostructured metal films. We measure both the optical and electrical properties of films perforated with nanometer-scale features and optimize the design parameters in order to maximize optical transmission without sacrificing electrical conductivity. We demonstrate that plasmonic transparent conductors can out-perform indium tin oxide in terms of both their transparency and their conductivity.

Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

NASA Technical Reports Server (NTRS)

Dickie, Matthew R. (Inventor); Nikzad, Shouleh (Inventor); Greer, H. Frank (Inventor); Jones, Todd J. (Inventor); Vasquez, Richard P. (Inventor); Hoenk, Michael E. (Inventor)

2012-01-01

A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

Nanocomposite TiN films with embedded MoS2 inorganic fullerenes produced by combining supersonic cluster beam deposition with cathodic arc reactive evaporation

NASA Astrophysics Data System (ADS)

Piazzoni, C.; Blomqvist, M.; Podestà, A.; Bardizza, G.; Bonati, M.; Piseri, P.; Milani, P.; Davies, C.; Hatto, P.; Ducati, C.; Sedláčková, K.; Radnóczi, G.

2008-01-01

We report the production and characterization of nanocomposite thin films consisting of a titanium nitride matrix with embedded molybdenum disulphide fullerene-like nanoparticles. This was achieved by combining a cluster source generating a pulsed supersonic beam of MoS2 clusters with an industrial cathodic arc reactive evaporation apparatus used for TiN deposition. Cluster-assembled films show the presence of MoS2 nanocages and nanostructures and the survival of such structures dispersed in the TiN matrix in the co-deposited samples. Nanotribological characterization by atomic force microscopy shows that the presence of MoS2 nanoparticles even in very low concentration modifies the behaviour of the TiN matrix.

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

NASA Astrophysics Data System (ADS)

Wang, Buguo; Claflin, Bruce; Look, David; Jiménez, Juan

2018-02-01

Indium-doped ZnO bulk crystals grown by the hydrothermal method are highly-conductive, with resistivity at 0.01 Ωcm at room temperature as revealed by Hall-effect measurement. In this paper we report on structural and optical properties of these crystals. The grown In:ZnO crystals have been studied by high resolution X-ray diffraction, micro-Raman scattering and low-temperature photoluminescence and cathodoluminescence. It was found that the c lattice parameter of the grown In:ZnO crystal expanded 0.06% with respect to the lithium-doped ZnO crystal seed, and the In-doped ZnO overgrew the seed crystal pseudomorphically but with high quality crystallinity; the X-ray rocking curves show the FWHM of the Zn face and O faces are only 0.05° and 0.1° ; and the indium concentration in the crystal reaches the solubility limit. Raman spectra show strain relaxation gradually from the regrowth interface as well as a weak spectral feature at 723 cm-1. The peak at 312 cm-1 noticed in hydrothermally grown In:ZnO nanostructures does not appear in our In-doped crystals, indicating that this peak may be associated with specific defects (e.g. surface related) of the nanostructures. Photoluminescence measurements show that an indium donor bound exciton peak I9 (In0X) is the dominant peak in the PL spectrum, located at 3.3586 eV on the zinc face and 3.3577 eV on the oxygen face. Both of them deviated from the consensus literature value of 3.3567 eV, probably due to strain in the crystal induced by impurities.

Indium Lung Disease

PubMed Central

Nakano, Makiko; Omae, Kazuyuki; Takeuchi, Koichiro; Chonan, Tatsuya; Xiao, Yong-long; Harley, Russell A.; Roggli, Victor L.; Hebisawa, Akira; Tallaksen, Robert J.; Trapnell, Bruce C.; Day, Gregory A.; Saito, Rena; Stanton, Marcia L.; Suarthana, Eva; Kreiss, Kathleen

2012-01-01

Background: Reports of pulmonary fibrosis, emphysema, and, more recently, pulmonary alveolar proteinosis (PAP) in indium workers suggested that workplace exposure to indium compounds caused several different lung diseases. Methods: To better understand the pathogenesis and natural history of indium lung disease, a detailed, systematic, multidisciplinary analysis of clinical, histopathologic, radiologic, and epidemiologic data for all reported cases and workplaces was undertaken. Results: Ten men (median age, 35 years) who produced, used, or reclaimed indium compounds were diagnosed with interstitial lung disease 4-13 years after first exposure (n = 7) or PAP 1-2 years after first exposure (n = 3). Common pulmonary histopathologic features in these patients included intraalveolar exudate typical of alveolar proteinosis (n = 9), cholesterol clefts and granulomas (n = 10), and fibrosis (n = 9). Two patients with interstitial lung disease had pneumothoraces. Lung disease progressed following cessation of exposure in most patients and was fatal in two. Radiographic data revealed that two patients with PAP subsequently developed fibrosis and one also developed emphysematous changes. Epidemiologic investigations demonstrated the potential for exposure to respirable particles and an excess of lung abnormalities among coworkers. Conclusions: Occupational exposure to indium compounds was associated with PAP, cholesterol ester crystals and granulomas, pulmonary fibrosis, emphysema, and pneumothoraces. The available evidence suggests exposure to indium compounds causes a novel lung disease that may begin with PAP and progress to include fibrosis and emphysema, and, in some cases, premature death. Prospective studies are needed to better define the natural history and prognosis of this emerging lung disease and identify effective prevention strategies. PMID:22207675

Control banding assessment of workers' exposure to indium and its compounds in 13 Japanese indium plants.

PubMed

Higashikubo, Ichiro; Arito, Heihachiro; Ando, Kenji; Araki, Akihiro; Shimizu, Hidesuke; Sakurai, Haruhiko

2018-05-25

This study aimed to assess workers' exposure to indium and its compounds in 55 indium-handling operations among 13 Japanese plants. The surveyed plants were selected from indium-manufacturing plants whose annual indium production exceeded 500 kg. The Control of Substances Hazardous to Health (COSHH) Essentials control banding toolkit, which contains simple scales for hazard levels, quantities in daily use, and "dustiness" characteristics, was used to assess generic risks of indium-handling operations. The operations were then classified into one of four Control Approaches (CAs). There were 35 indium-handling operations classified into CA4 (requires expert advice) and 16 grouped into CA3 (requires containment). There were three operations classified into CA2 (requires engineering controls) and only one into CA1 (requires good general ventilation (GV) and working practices). Of the 51 operations classified as CA4 and CA3, 36 were found to be improperly equipped with local exhaust ventilation, and the remaining 15 operations solely relied on GV practices. Respiratory protective equipment (RPE) used in the 13 indium plants was examined with reference to the recommendations of the COSHH Essentials and Japan's Technical Guidelines. Our findings suggest that stringent engineering control measures and respiratory protection from indium dust are needed to improve indium-handling operations. Our results show that the most common control approach for Japanese indium-handling operations is to require expert advice, including worker health checks for respiratory diseases and exposure measurement by air sampling.

The optical properties of α-Fe2O3 nanostructures synthesized with different immersion time

NASA Astrophysics Data System (ADS)

Ahmad, W. R. W.; Mamat, M. H.; Zoolfakar, A. S.; Khusaimi, Z.; Yusof, M. M.; Ismail, A. S.; Saidi, S. A.; Rusop, M.

2018-05-01

In this study, nanostructured hematite (α-Fe2O3) thin films have been prepared successfully by sonicated immersion method on fluorine-doped tin oxide (FTO) coated glass substrate. The effect of the immersion time on the structural and optical properties of α-Fe2O3 nanostructure were investigated for a variation of immersion time ranging from 1 to 4 hour. From the characterization results, the surface morphology of the sample prepared in 4 hours immersion process has exhibited highest porosity, and the highest absorbance properties were found in the same sample. These results suggest that the different time duration during immersion process play important roles in optical properties of α-Fe2O3 nanostructures.

Incident light adjustable solar cell by periodic nanolens architecture

PubMed Central

Yun, Ju-Hyung; Lee, Eunsongyi; Park, Hyeong-Ho; Kim, Dong-Wook; Anderson, Wayne A.; Kim, Joondong; Litchinitser, Natalia M.; Zeng, Jinwei; Yi, Junsin; Kumar, M. Melvin David; Sun, Jingbo

2014-01-01

Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order to avoid serious recombination loss, to realize periodic nanostructures in solar cells without direct etching in a light absorbing semiconductor? Here we propose and demonstrate a promising architecture to shape nanolenses on a planar semiconductor. Optically transparent and electrically conductive nanolenses simultaneously provide the optical benefit of modulating the incident light and the electrical advantage of supporting carrier transportation. A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incident light-spectrum in focal lengths overlapping to a strong electric field region for high carrier collection efficiency. The ITO nanolens effectively broadens near-zero reflection and provides high tolerance to the incident light angles. We present a record high light-conversion efficiency of 16.0% for a periodic nanostructured Si solar cell. PMID:25371099

In vitro corrosion behaviour and microhardness of high-copper amalgams with platinum and indium.

PubMed

Ilikli, B G; Aydin, A; Işimer, A; Alpaslan, G

1999-02-01

Samples prepared from Luxalloy, GS-80, Permite-C and Logic and polished after 24 h by traditional methods were stored in polypropylene tubes containing phosphate-buffered saline solutions (pH 3.5 and 6.5) and distilled water. The amounts of mercury, silver, tin, copper, zinc, platinum and indium in the test solutions were determined at the first, second, eighth, 52nd and 78th week by atomic absorption spectrometry. At the end of the eighth week the amalgam samples were removed from solutions and evaluated by Rockwell Super Scial Microhardness tester. Statistically significant low amounts of metal ions were measured for Permite-C containing indium and Logic containing platinum. The microhardness test results showed that there were statistically significant increases in the microhardness of Permite-C and Logic. As a result it was shown that the amalgam samples were affected from corrosion conditions to different degrees. Sample of the Logic group that was stored in distilled water, showed smoother surface properties than other amalgam samples containing high copper. However, it was observed that samples of Permite-C group had the smoothest surface properties.

A field effect glucose sensor with a nanostructured amorphous In-Ga-Zn-O network.

PubMed

Du, Xiaosong; Li, Yajuan; Herman, Gregory S

2016-11-03

Amorphous indium gallium zinc oxide (IGZO) field effect transistors (FETs) are a promising technology for a wide range of electronic applications. Herein, we fabricated and characterized FETs with a nanostructured IGZO network as a sensing transducer. The IGZO was patterned using colloidal lithography and electrohydrodynamic printing, where an 8 μm wide nanostructured close-packed hexagonal IGZO network was obtained. Electrical characterization of the nanostructured IGZO network FET demonstrated a drain-source current on-off ratio of 6.1 × 10 3 and effective electron mobilities of 3.6 cm 2 V -1 s -1 . The nanostructured IGZO network was functionalized by aminosilane groups with cross-linked glucose oxidase. The devices demonstrated a decrease in drain-source conductance and a more positive V ON with increasing glucose concentration. These changes are ascribed to the acceptor-like surface states associated with positively charged aminosilane groups attached to the nanostructured IGZO surface. Continuous monitoring of the drain-source current indicates a stepwise and fully reversible response to glucose concentrations with a short response time. The specific catalytic reaction between the GOx enzyme and glucose eliminates interference from acetaminophen/ascorbic acid. We demonstrate that nanostructured IGZO FETs have improved sensitivity compared to non-nanostructured IGZO for sensing glucose and can be potentially extended to other biosensor technologies.

Ultra-Rapid Crystallization of L-alanine Using Monomode Microwaves, Indium Tin Oxide and Metal-Assisted and Microwave-Accelerated Evaporative Crystallization.

PubMed

Lansiquot, Carisse; Boone-Kukoyi, Zainab; Shortt, Raquel; Thompson, Nishone; Ajifa, Hillary; Kioko, Bridgit; Constance, Edward Ned; Clement, Travis; Ozturk, Birol; Aslan, Kadir

2017-01-01

The use of indium tin oxide (ITO) and focused monomode microwave heating for the ultra-rapid crystallization of L-alanine (a model amino acid) is reported. Commercially available ITO dots (< 5 mm) attached to blank poly(methyl)methacrylate (PMMA, 5 cm in diameter with 21-well silicon isolators: referred to as the iCrystal plates) were found to withstand prolonged microwave heating during crystallization experiments. Crystallization of L-alanine was performed at room temperature (a control experiment), with the use of two microwave sources: a 2.45 GHz conventional microwave (900 W, power level 1, a control experiment) and 8 GHz (20 W) solid state, monomode microwave source with an applicator tip that focuses the microwave field to a 5-mm cavity. Initial appearance of L-alanine crystals and on iCrystal plates with ITO dots took 47 ± 2.9 min, 12 ± 7.6 min and 1.5 ± 0.5 min at room temperature, using a conventional microwave and focused monomode microwave heating, respectively. Complete evaporation of the solvent using the focused microwaves was achieved in 3.2 ± 0.5 min, which is ~52-fold and ~172-fold faster than that observed at room temperature and using conventional microwave heating, respectively. The size and number of L-alanine crystals was dependent on the type of the 21-well iCrystal plates and the microwave heating method: 33 crystals of 585 ± 137 μm in size at room temperature > 37 crystals of 542 ± 100 μm in size with conventional microwave heating > 331 crystals of 311 ± 190 μm in size with focused monomode microwave. FTIR, optical microscopy and powder X-ray diffraction analysis showed that the chemical composition and crystallinity of the L-alanine crystals did not change when exposed to microwave heating and ITO surfaces. In addition, theoretical simulations for the binding of L-alanine molecules to ITO and other metals showed the predicted nature of hydrogen bonds formed between L-alanine and these surfaces.

Ultra-Rapid Crystallization of L-alanine Using Monomode Microwaves, Indium Tin Oxide and Metal-Assisted and Microwave-Accelerated Evaporative Crystallization

PubMed Central

Lansiquot, Carisse; Boone-Kukoyi, Zainab; Shortt, Raquel; Thompson, Nishone; Ajifa, Hillary; Kioko, Bridgit; Constance, Edward Ned; Clement, Travis; Ozturk, Birol; Aslan, Kadir

2018-01-01

The use of indium tin oxide (ITO) and focused monomode microwave heating for the ultra-rapid crystallization of L-alanine (a model amino acid) is reported. Commercially available ITO dots (< 5 mm) attached to blank poly(methyl)methacrylate (PMMA, 5 cm in diameter with 21-well silicon isolators: referred to as the iCrystal plates) were found to withstand prolonged microwave heating during crystallization experiments. Crystallization of L-alanine was performed at room temperature (a control experiment), with the use of two microwave sources: a 2.45 GHz conventional microwave (900 W, power level 1, a control experiment) and 8 GHz (20 W) solid state, monomode microwave source with an applicator tip that focuses the microwave field to a 5-mm cavity. Initial appearance of L-alanine crystals and on iCrystal plates with ITO dots took 47 ± 2.9 min, 12 ± 7.6 min and 1.5 ± 0.5 min at room temperature, using a conventional microwave and focused monomode microwave heating, respectively. Complete evaporation of the solvent using the focused microwaves was achieved in 3.2 ± 0.5 min, which is ~52-fold and ~172-fold faster than that observed at room temperature and using conventional microwave heating, respectively. The size and number of L-alanine crystals was dependent on the type of the 21-well iCrystal plates and the microwave heating method: 33 crystals of 585 ± 137 μm in size at room temperature > 37 crystals of 542 ± 100 μm in size with conventional microwave heating > 331 crystals of 311 ± 190 μm in size with focused monomode microwave. FTIR, optical microscopy and powder X-ray diffraction analysis showed that the chemical composition and crystallinity of the L-alanine crystals did not change when exposed to microwave heating and ITO surfaces. In addition, theoretical simulations for the binding of L-alanine molecules to ITO and other metals showed the predicted nature of hydrogen bonds formed between L-alanine and these surfaces. PMID:29657884

Hollow tin/chromium whiskers

NASA Astrophysics Data System (ADS)

Cheng, Jing; Vianco, Paul T.; Li, James C. M.

2010-05-01

Tin whiskers have been an engineering challenge for over five decades. The mechanism has not been agreed upon thus far. This experiment aimed to identify a mechanism by applying compressive stresses to a tin film evaporated on silicon substrate with an adhesion layer of chromium in between. A phenomenon was observed in which hollow whiskers grew inside depleted areas. Using focused ion beam, the hollow whiskers were found to contain both tin and chromium. At the bottom of the depleted areas, thin tin/tin oxide film remained over the chromium layer. It indicates that tin transport occurred along the interface between tin and chromium layers.

Electroreduction-based electrochemical-enzymatic redox cycling for the detection of cancer antigen 15-3 using graphene oxide-modified indium-tin oxide electrodes.

PubMed

Park, Seonhwa; Singh, Amardeep; Kim, Sinyoung; Yang, Haesik

2014-02-04

We compare herein biosensing performance of two electroreduction-based electrochemical-enzymatic (EN) redox-cycling schemes [the redox cycling combined with simultaneous enzymatic amplification (one-enzyme scheme) and the redox cycling combined with preceding enzymatic amplification (two-enzyme scheme)]. To minimize unwanted side reactions in the two-enzyme scheme, β-galactosidase (Gal) and tyrosinase (Tyr) are selected as an enzyme label and a redox enzyme, respectively, and Tyr is selected as a redox enzyme label in the one-enzyme scheme. The signal amplification in the one-enzyme scheme consists of (i) enzymatic oxidation of catechol into o-benzoquinone by Tyr and (ii) electroreduction-based EN redox cycling of o-benzoquinone. The signal amplification in the two-enzyme scheme consists of (i) enzymatic conversion of phenyl β-d-galactopyranoside into phenol by Gal, (ii) enzymatic oxidation of phenol into catechol by Tyr, and (iii) electroreduction-based EN redox cycling of o-benzoquinone including further enzymatic oxidation of catechol to o-benzoquinone by Tyr. Graphene oxide-modified indium-tin oxide (GO/ITO) electrodes, simply prepared by immersing ITO electrodes in a GO-dispersed aqueous solution, are used to obtain better electrocatalytic activities toward o-benzoquinone reduction than bare ITO electrodes. The detection limits for mouse IgG, measured with GO/ITO electrodes, are lower than when measured with bare ITO electrodes. Importantly, the detection of mouse IgG using the two-enzyme scheme allows lower detection limits than that using the one-enzyme scheme, because the former gives higher signal levels at low target concentrations although the former gives lower signal levels at high concentrations. The detection limit for cancer antigen (CA) 15-3, a biomarker of breast cancer, measured using the two-enzyme scheme and GO/ITO electrodes is ca. 0.1 U/mL, indicating that the immunosensor is highly sensitive.

Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

NASA Astrophysics Data System (ADS)

Shih, Grace Hwei-Pyng

Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

Heterojunction Fe2O3-SnO2 Nanostructured Photoanode for Efficient Photoelectrochemical Water Splitting

NASA Astrophysics Data System (ADS)

Han, Hyun Soo; Shin, Sun; Noh, Jun Hong; Cho, In Sun; Hong, Kug Sun

2014-04-01

Hierarchically organized nanostructures were fabricated by growing SnO2 nanoparticles on a fluorine-doped tin oxide/glass substrate via a laser ablation method. Cauliflower-like clusters consisting of agglomerated nanoparticles were deposited and aligned with respect to the substrate with a large internal surface area and open channels of pores. The morphological changes of SnO2 nanostructured films were investigated as a function of the oxygen working pressure in the range of 100-500 mTorr. A nanostructured scaffold prepared at an oxygen working pressure of 100 mTorr exhibited the best photoelectrochemical (PEC) performance. A Ti:Fe2O3-SnO2 nanostructured photoanode showed the photocurrent that was 34% larger than that of a Ti:Fe2O3 flat photoanode when the amount of Ti:Fe2O3 sensitizer was identical for the two photoanodes. The larger surface area and longer electron lifetime of the Ti:Fe2O3-SnO2 nanostructured photoanode explains its improved PEC performance.

Nanostructured Polyaniline Coating on ITO Glass Promotes the Neurite Outgrowth of PC 12 Cells by Electrical Stimulation.

PubMed

Wang, Liping; Huang, Qianwei; Wang, Jin-Ye

2015-11-10

A conducting polymer polyaniline (PANI) with nanostructure was synthesized on indium tin oxide (ITO) glass. The effect of electrical stimulation on the proliferation and the length of neurites of PC 12 cells was investigated. The dynamic protein adsorption on PANI and ITO surfaces in a cell culture medium was also compared with and without electrical stimulation. The adsorbed proteins were characterized using SDS-PAGE. A PANI coating on ITO surface was shown with 30-50 nm spherical nanostructure. The number of PC 12 cells was significantly greater on the PANI/ITO surface than on ITO and plate surfaces after cell seeding for 24 and 36 h. This result confirmed that the PANI coating is nontoxic to PC 12 cells. The electrical stimulation for 1, 2, and 4 h significantly enhanced the cell numbers for both PANI and ITO conducting surfaces. Moreover, the application of electrical stimulation also improved the neurite outgrowth of PC 12 cells, and the number of PC 12 cells with longer neurite lengths increased obviously under electrical stimulation for the PANI surface. From the mechanism, the adsorption of DMEM proteins was found to be enhanced by electrical stimulation for both PANI/ITO and ITO surfaces. A new band 2 (around 37 kDa) was observed from the collected adsorbed proteins when PC 12 cells were cultured on these surfaces, and culturing PC 12 cells also seemed to increase the amount of band 1 (around 90 kDa). When immersing PANI/ITO and ITO surfaces in a DMEM medium without a cell culture, the number of band 3 (around 70 kDa) and band 4 (around 45 kDa) proteins decreased compared to that of PC 12 cell cultured surfaces. These results are valuable for the design and improvement of the material performance for neural regeneration.

Synthesis of tin (II) oxide from tin (II) oxohydroxide

NASA Astrophysics Data System (ADS)

Kuznetsova, Svetlana; Lisitsa, Konstantin

2017-11-01

Sufficiently limited use of tin (II) oxide is associated with the difficulties of its preparation without impurities of tin (IV) oxide. Understanding the cause of the oxidation process will make it possible to develop methods for obtaining SnO without impurities. The influence of ammonium chloride concentration in the suspension on the oxide composition was investigated. The temperature of oxidation (400 °C) on the air and temperature decomposition in the argon (350 °C) of Sn6O4(OH)4 in the solid phase were determined by the thermal analysis method. The decomposition temperature of the oxyhydroxide in the suspension of ammonium chloride does not exceed 100 °C. An increase in the content of ammonium chloride in an aqueous solution leads to an increase i n the solubility of oxohydroxide and leads to an increase in pH. The suspensions of Sn6O4(OH)4 were subjected to heat treatment on a sand bath and under microwave irradiation. Samples of tin oxide were obtained. The quantitative composition of the mixture of tin oxides was determined. The research also highlights emphasizes that the oxidation of tin (II) to tin (IV) is associated with the dissolved oxygen content in the suspension.

Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.

Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical

The indium oxide micro and nanopyramids: Morphology materializing and H2S sensing properties

NASA Astrophysics Data System (ADS)

Shariati, Mohsen

2015-07-01

Indium oxide (In2O3) pyramidal nano and microstructures were prepared by a thermal evaporation and condensation method. The preannealing step affected the nanostructures morphologies and their sensing capability. The nanosize structures have been fabricated in nucleated preorganized situation. By changing from prepared sites to undesired sites, the morphology was deteriorated. The synthesized In2O3 structures were characterized by field emission scanning electron microscopy (FESEM) and the X-ray diffraction (XRD) measurements. The FESEM images showed that nanostructures with 100-250 nm in size were fabricated. The XRD patterns indicated that most of the samples are crystalline. Then, the fabricated structures were investigated for H2S gas sensing. The nanocrystal pyramids were found to be sensitive to as low as 100 ppb of H2S gas at room temperature and microcrystal ones to 300 ppb. The nanopyramids demonstrated that they were very sensitive to gas presence and their response and recovery time were in a few seconds.

Raman Scattering from Tin

DTIC Science & Technology

2015-09-01

ARL-TR-7448 ● SEP 2015 US Army Research Laboratory Raman Scattering from Tin by Patrick A Folkes, Patrick Taylor, Charles Rong...REPORT TYPE 3. DATES COVERED 00-00-2015 to 00-00-2015 4. TITLE AND SUBTITLE Raman Scattering from Tin 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c... tin as an analytical tool for discerning specific allotropic differences in ultra-thin tin films, and discerning differences between the tin and the

Fabrication method for a room temperature hydrogen sensor

NASA Technical Reports Server (NTRS)

Shukla, Satyajit V. (Inventor); Cho, Hyoung (Inventor); Seal, Sudipta (Inventor); Ludwig, Lawrence (Inventor)

2011-01-01

A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

Indium tin oxide-coated glass modified with reduced graphene oxide sheets and gold nanoparticles as disposable working electrodes for dopamine sensing in meat samples

NASA Astrophysics Data System (ADS)

Yang, Jiang; Strickler, J. Rudi; Gunasekaran, Sundaram

2012-07-01

Sensitive, rapid, and accurate detection of dopamine (DA) at low cost is needed for clinical diagnostic and therapeutic purposes as well as to prevent illegal use of DA in animal feed. We employed a simple approach to synthesize reduced graphene oxide sheets (rGOS) and gold nanoparticles (AuNPs) at room temperature on indium tin oxide-coated glass (ITO) slides as disposable working electrodes for sensing DA. Graphene oxide (GO) was directly reduced on ITO to remove oxygenated species via a rapid and green process without using chemical reducing reagents. AuNPs were electrochemically deposited in situ on rGOS-ITO with fairly uniform density and size. The sensitivity of the AuNPs-rGOS-ITO sensor for DA detection is 62.7 μA mM-1 cm-2 with good selectivity against common electrochemically interfering species such as ascorbic acid (AA) and uric acid (UA), and the detection limit measured by differential pulse voltammetry (DPV), at a signal-noise ratio of 3, was 6.0 × 10-8 M. The electrochemical catalysis of DA was proven to be a surface process with an electron transfer coefficient (α) of 0.478 and a rate constant (ks) of 1.456 s-1. It correlates well with the conventional UV-vis spectrophotometric approach (R = 0.9973) but with more than thrice the dynamic range (up to 4.5 mM). The sensor also exhibited good stability and capability to detect DA in beef samples, and thus is a promising candidate for simple and inexpensive sub-nanomolar detection of DA, especially in the presence of UV-absorbing compounds.

Microwave exposure as a fast and cost-effective alternative of oxygen plasma treatment of indium-tin oxide electrode for application in organic solar cells

NASA Astrophysics Data System (ADS)

Soultati, Anastasia; Kostis, Ioannis; Papadimitropoulos, Giorgos; Zeniou, Angelos; Gogolides, Evangelos; Alexandropoulos, Dimitris; Vainos, Nikos; Davazoglou, Dimitris; Speliotis, Thanassis; Stathopoulos, Nikolaos A.; Argitis, Panagiotis; Vasilopoulou, Maria

2017-12-01

Pre-treatment methods are commonly employed to clean as well as to modify electrode surfaces. Many previous reports suggest that modifying the surface properties of indium tin oxide (ITO) by oxygen plasma treatment is a crucial step for the fabrication of high performance organic solar cells. In this work, we propose a fast and cost-effective microwave exposure step for the modification of the surface properties of ITO anode electrodes used in organic solar cells. It is demonstrated that a short microwave exposure improves the hydrophilicity and reduces the roughness of the ITO surface, as revealed by contact angle and atomic force microscopy (AFM) measurements, respectively, leading to a better quality of the PEDOT:PSS film coated on top of it. Similar results were obtained with the commonly used oxygen plasma treatment of ITO suggesting that microwave exposure is an effective process for modifying the surface properties of ITO with the benefits of low-cost, easy and fast processing. In addition, the influence of the microwave exposure of ITO anode electrode on the performance of an organic solar cell based on the poly(3-hexylthiophene):[6,6]-phenyl C70 butyric acid methyl ester (P3HT:PC70BM) blend is investigated. The 71% efficiency enhancement obtained in the microwave annealed-ITO based device as compared to the device with the as-received ITO was mainly attributed to the improvement in the short circuit current (J sc) and decreased leakage current caused by the reduced series and the increased shunt resistances and also by the higher charge generation efficiency, and the reduced recombination losses.

Engineering Low-Dimensional Nanostructures Towards Flexible Electronics

NASA Astrophysics Data System (ADS)

Byrley, Peter Samuel

Flexible electronics have been proposed as the next generation of electronic devices. They have advantages over traditional electronics in that they use less material, are more durable and have greater versatility in their proposed applications. However, there are a variety of types of devices being developed that have specific engineering challenges. This dissertation addresses two of those challenges. The first challenge involves lowering contact resistance in MoS2 based flexible thin film transistor devices using a photochemical phase change method while the second addresses using silver nanowire networks as a replacement flexible electrode for indium tin oxide in flexible electronics. In this dissertation, a scalable method was developed for making monolayer MoS2 using ambient pressure chemical vapor deposition. These films were then characterized using spectroscopic techniques and atomic force microscopy. A photochemical phase change mechanism was then proposed to improve contact resistance in MoS2 based devices. The central hypothesis is that the controllable partial transition from a semiconducting 2H to metallic 1T phase can be realized in monolayer TMDs through photo-reduction in the presence of hole scavenging chemicals. Phase-engineering in monolayer TMDs would enable the fabrication of high-quality heterophase structures with the potential to improve carrier mobility and contact. Phase change as a result of the proposed photochemical method was confirmed using Raman spectroscopy, photoluminescence measurements, X-Ray photoelectron spectroscopy and other supporting data. Gold coated silver nanowires were then created to serve as flexible nanowire based electrodes by overcoming galvanic replacement in solution. This was confirmed using various forms of electron microscopy. The central hypothesis is that a thin gold coating will enable silver nanowire meshes to remain electrically stable in atmosphere and retain necessary low resistance values and

Optimized organic photovoltaics with surface plasmons

NASA Astrophysics Data System (ADS)

Omrane, B.; Landrock, C.; Aristizabal, J.; Patel, J. N.; Chuo, Y.; Kaminska, B.

2010-06-01

In this work, a new approach for optimizing organic photovoltaics using nanostructure arrays exhibiting surface plasmons is presented. Periodic nanohole arrays were fabricated on gold- and silver-coated flexible substrates, and were thereafter used as light transmitting anodes for solar cells. Transmission measurements on the plasmonic thin film made of gold and silver revealed enhanced transmission at specific wavelengths matching those of the photoactive polymer layer. Compared to the indium tin oxide-based photovoltaic cells, the plasmonic solar cells showed overall improvements in efficiency up to 4.8-fold for gold and 5.1-fold for the silver, respectively.

3D nanostructured N-doped TiO2 photocatalysts with enhanced visible absorption.

PubMed

Cho, Sumin; Ahn, Changui; Park, Junyong; Jeon, Seokwoo

2018-05-24

Considering the environmental issues, it is essential to develop highly efficient and recyclable photocatalysts in purification systems. Conventional TiO2 nanoparticles have strong intrinsic oxidizing power and high surface area, but are difficult to collect after use and rarely absorb visible light, resulting in low photocatalytic efficiency under sunlight. Here we develop a new type of highly efficient and recyclable photocatalyst made of a three-dimensional (3D) nanostructured N-doped TiO2 monolith with enhanced visible light absorption. To prepare the sample, an ultrathin TiN layer (∼10 nm) was conformally coated using atomic layer deposition (ALD) on 3D nanostructured TiO2. Subsequent thermal annealing at low temperature (550 °C) converted TiN to anatase phase N-doped TiO2. The resulting 3D N-doped TiO2 showed ∼33% enhanced photocatalytic performance compared to pure 3D TiO2 of equivalent thickness under sunlight due to the reduced bandgap, from 3.2 eV to 2.75 eV through N-doping. The 3D N-doped TiO2 monolith could be easily collected and reused at least 5 times without any degradation in photocatalytic performance.

Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

2015-12-01

Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

Indium Single-Ion Frequency Standard

NASA Technical Reports Server (NTRS)

Nagourney, Warren

2001-01-01

A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

THE TOXICITY OF INDIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Downs, W.L.; Scott, J.K.; Steadman, L.T.

1959-09-16

Data are presented on the toxic effects of indium, administered as a chloride (InCl/sub 3/) or as an oxide (In/sub 2/O/sub 3/), in rats, rabbits, and dcgs. Data are included on the tissue distribution and excretion of indium-114. (C.H.)

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

PubMed

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

PubMed

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

PubMed Central

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-01-01

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively. PMID:28773801

Electrochemical synthesis of nanostructured Se-doped SnS: Effect of Se-dopant on surface characterizations

NASA Astrophysics Data System (ADS)

Kafashan, Hosein; Azizieh, Mahdi; Balak, Zohre

2017-07-01

SnS1-xSex nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, -1 V, and 30 min, respectively. SnS1-xSex nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV-vis spectroscopy. The XRD patterns revealed that the SnS1-xSex nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS1-xSex nanostructures due to Se-doping. PL and UV-vis spectroscopy were used to evaluate the optical properties of SnS1-xSex thin films. The PL spectra of SnS1-xSex nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV-vis spectra showed that the optical band gap energy (Eg) of SnS1-xSex nanostructures varied between 1.22-1.65 eV, due to Se-doping.

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw; Shivaraman, Ravi

2014-09-21

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

NASA Astrophysics Data System (ADS)

Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

2014-04-01

The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

XUV generation from the interaction of pico- and nanosecond laser pulses with nanostructured targets

NASA Astrophysics Data System (ADS)

Barte, Ellie Floyd; Lokasani, Ragava; Proska, Jan; Stolcova, Lucie; Maguire, Oisin; Kos, Domagoj; Sheridan, Paul; O'Reilly, Fergal; Sokell, Emma; McCormack, Tom; O'Sullivan, Gerry; Dunne, Padraig; Limpouch, Jiri

2017-05-01

Laser-produced plasmas are intense sources of XUV radiation that can be suitable for different applications such as extreme ultraviolet lithography, beyond extreme ultraviolet lithography and water window imaging. In particular, much work has focused on the use of tin plasmas for extreme ultraviolet lithography at 13.5 nm. We have investigated the spectral behavior of the laser produced plasmas formed on closely packed polystyrene microspheres and porous alumina targets covered by a thin tin layer in the spectral region from 2.5 to 16 nm. Nd:YAG lasers delivering pulses of 170 ps (Ekspla SL312P )and 7 ns (Continuum Surelite) duration were focused onto the nanostructured targets coated with tin. The intensity dependence of the recorded spectra was studied; the conversion efficiency (CE) of laser energy into the emission in the 13.5 nm spectral region was estimated. We have observed an increase in CE using high intensity 170 ps Nd:YAG laser pulses as compared with a 7 ns pulse.

The Impact of Morphology and Composition on the Resistivity and Oxidation Resistance of Metal Nanostructure Films

NASA Astrophysics Data System (ADS)

Stewart, Ian Edward

Printed electronics, including transparent conductors, currently rely on expensive materials to generate high conductivity devices. Conductive inks for thick film applications utilizing inkjet, aerosol, and screen printing technologies are often comprised of expensive and rare silver particles. Thin film applications such as organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs) predominantly employ indium tin oxide (ITO) as the transparent conductive layer which requires expensive and wasteful vapor deposition techniques. Thus an alternative to silver and ITO with similar performance in printed electronics warrants considerable attention. Copper nanomaterials, being orders of magnitude cheaper and more abundant than silver or indium, solution-coatable, and exhibiting a bulk conductivity only 6 % less than silver, have emerged as a promising candidate for incorporation in printed electronics. First, we examine the effect of nanomaterial shape on the conductivity of thick films. The inks used in such films often require annealing at elevated temperature in order to sinter the silver nanoparticles together and obtain low resistivities. We explore the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths, Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) deposited from water at temperatures between 70 and 400 °C. At the lowest temperatures, longer Ag NWs exhibited the lowest resistivity (1.8 x 10-5 O cm), suggesting that the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles. This result supported previous research showing that junction resistance between Ag NWs in thin film conductors also dominates optoelectronic performance. Since the goal is to replace silver with copper, we perform a similar analysis by using a pseudo-2D rod network modeling approach that has been modified to include lognormal distributions in length

The Southeast Asian Tin Belt

NASA Astrophysics Data System (ADS)

Schwartz, M. O.; Rajah, S. S.; Askury, A. K.; Putthapiban, P.; Djaswadi, S.

1995-07-01

The Southeast Asian Tin Belt is a north-south elongate zone 2800 km long and 400 km wide, extending from Burma (Myanmar) and Thailand to Peninsular Malaysia and the Indonesian Tin Islands. Altogether 9.6 million tonnes of tin, equivalent to 54% of the world's tin production is derived from this region. Most of the granitoids in the region can be grouped geographically into elongate provinces or belts, based on petrographic and geochronological features. - The Main Range Granitoid Province in western Peninsular Malaysia, southern Peninsular Thailand and central Thailand is almost entirely made up of biotite granite (184-230 Ma). Tin deposits associated with these granites contributed 55% of the historic tin production of Southeast Asia. - The Northern Granitoid Province in northern Thailand (0.1% of tin production) also has dominant biotite granite (200-269 Ma) but it is distinguished by abundant post-intrusion deformation. - The Eastern Granitoid Province extends from eastern Peninsular Malaysia to eastern Thailand. The Malaysian part is subdivided into the East Coast Belt (220-263 Ma), Boundary Range Belt (197-257 Ma) and Central Belt (79-219 Ma). The granitoids cover a wide compositional range from biotite granite to hornblende-biotite granite/granodiorite and diorite-gabbro. Tin deposits are associated with biotite granite in the East Coast Belt (3% of tin production). The granitoids in the other areas of the Eastern Granitoid Province are barren. - The Western Granitoid Province (22-149 Ma) in northern Peninsular Thailand, western Thailand and Burma has biotite granite and hornblende-biotite granite/granodiorite. Tin deposits are associated with biotite granite, which probably is the dominant phase (14% of tin production). The granitoids of the Indonesian Tin Islands (193-251 Ma) do not permit grouping into geographically distinct units. Main Range-type and Eastern Province-type plutons occur next to each other. Most of the tin deposits are associated with Main

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses andmore » compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.« less

Investigation of advanced nanostructured multijunction photoanodes for enhanced solar hydrogen generation via water splitting

NASA Astrophysics Data System (ADS)

Ishihara, Hidetaka

density was observed for the nano-capped titania nanotubes due to the enhanced charge transfer process. Similarly, another metal oxide semiconductor was investigated tungsten trioxide (WO3), which has a much higher absorption capability (12%) in the solar spectrum. The WO3 porous nanostructures suffered from surface corrosion resulting in a large reduction in the photocurrent density as a function of time in the alkaline electrolytes. However, with a protective coating of Indium Tin Oxide (100 nm), the surface corrosion of WO3 porous nanostructures was reduced. A large increase in the photocurrent density of as much as 340% was observed after the ITO was applied to the WO3 porous nanostructures

Indium-free organic thin-film solar cells using a plasmonic electrode

NASA Astrophysics Data System (ADS)

Takatori, Kentaro; Nishino, Takayuki; Okamoto, Takayuki; Takei, Hiroyuki; Ishibashi, Koji; Micheletto, Ruggero

2016-05-01

We propose a new kind of organic solar cell (OSC) that substitutes the standard indium tin oxide (ITO) electrode with a silver layer with randomly arranged circular nanoholes (plasmonic electrode). The quasi-random structure in the silver layer efficiently converts wideband incident light into surface plasmon polaritons propagating along the surface of the silver film. In this way, the converted surface plasmon polaritons enhance light absorption in the active layer. We describe in detail the fabrication process we used and we give a thorough report of the resulting optical characteristics and performances. Although the transmittance of the plasmonic electrode is approximately one-third of that of the ITO electrodes, the power conversion efficiency of the OSCs with our plasmonic electrode is comparable to that of conventional inverted solar cells using ITO electrodes. Moreover, the obtained incident photon to current efficiency was better than that of the inverted solar cells in the wavelength regions around 400 nm and over 620 nm.

Tin whiskers in electronic circuits

NASA Astrophysics Data System (ADS)

Stupian, Gary W.

1992-12-01

Fibrous, conducting 'whiskers' often grow on pure tin plating. These tin whiskers have, for many years, been known to pose a reliability problem in electronic circuitry; therefore, the use of pure tin coatings in any critical electronic application is not recommended. Despite the warnings of the experts, tin plating is still found on electronic and mechanical components and problems with whiskers still arise. This document summarizes what is known about the growth of tin whiskers. A number of factors (e.g., coating thickness, plating conditions) are thought to be important in determining whether whiskers will grow. Although tin whiskers have been investigated from some decades, there is still disagreement on the effects of virtually every coating parameter. There is no disagreement, however, on the essential fact that it is very difficult to predict with certainty whether whiskers will grow on any specific tin-plated component, which of course is the basis of the 'experts' advice not to use pure tin plating. If tin-plated components are found in an electronic system, replacement is the safest policy. Some additional recommendations to minimize risk are presented here that may be of use in situations in which replacement of all suspect components is not the option of choice because of cost or schedule constraints.

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

PubMed

Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

2015-11-16

Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

PubMed

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Mesoscale elucidation of laser-assisted chemical deposition of Sn nanostructured electrodes

NASA Astrophysics Data System (ADS)

Liu, Zhixiao; Deng, Biwei; Cheng, Gary J.; Deng, Huiqiu; Mukherjee, Partha P.

2015-06-01

Nanostructured tin (Sn) is a promising high-capacity electrode for improved performance in lithium-ion batteries for electric vehicles. In this work, Sn nanoisland growth for nanostructured electrodes assisted by the pulse laser irradiation has been investigated based on a mesoscale modeling formalism. The influence of pertinent processing conditions, such as pulse duration, heating/cooling rates, and atom flux, on the Sn nanostructure formation is specifically considered. The interaction between the adsorbed atom and the substrate, represented by the adatom diffusion barrier, is carefully studied. It is found that the diffusion barrier predominantly affects the distribution of Sn atoms. For both α-Sn and β-Sn, the averaged coordination number is larger than 3 when the diffusion barrier equals to 0.15 eV. The averaged coordination number decreases as the diffusion barrier increases. The substrate temperature, which is determined by heating/cooling rates and pulse duration, can also affect the formation of Sn nanoislands. For α-Sn, when applied low heating/cooling rates, nanoislands cannot form if the diffusion barrier is larger than 0.35 eV.

Comparative assessment of gastrointestinal irritant potency in man of tin(II) chloride and tin migrated from packaging.

PubMed

Boogaard, Peter J; Boisset, Michel; Blunden, Steve; Davies, Scot; Ong, Teng Jin; Taverne, Jean-Pierre

2003-12-01

Tin is present in low concentrations in most canned foods and beverages, the highest levels being found in products packaged in unlacquered or partially lacquered tinplate cans. A limited number of case-reports of acute gastrointestinal disorders after consumption of food containing 100-500 mg/kg tin have been reported, but these reports suffer many insufficiencies. Controlled clinical studies on acute effects of tin migrated from packaging suggest a threshold concentration for adverse effects (AEs) of >730 mg/kg. Two separate randomised, single-centre, double-blind, crossover studies, enabling comparison of the tolerability of tin added as tin(II) chloride at concentrations of <0.5, 161, 264 and 529 mg/kg in 250 ml tomato juice in 20 volunteers (Study 1) and tin migrated from packaging at concentrations of <0.5, 201 and 267 mg/kg in 250 ml tomato soup in 24 volunteers (Study 2) were carried out. Distribution studies were conducted to get insight in the acute AEs of low molecular weight (<1000 Da) tin species in the soluble fraction of food products. Results show that the chemical form of tin and not the elemental concentration per se determines the severity of AEs. A clear dose-response relationship was only observed when tin was added as tin(II) chloride in tomato juice. No clinically significant AEs were reported in Study 2 and comparison of the incidence of tin-related AEs showed no difference between the dose levels (including control). Tin species of low molecular weight in supernatant represented 31-32% of total tin in canned tomato soup versus 56-61% in juice freshly spiked with tin(II) chloride. Differences in the incidence of AEs following administration of tomato juice with 161 and 264 mg of tin per kg and tomato soup with 201 and 267 mg of tin per kg likely results from differences in the concentration of low molecular weight tin species and in the nature of tin complexes formed. The results of this work demonstrate that tin levels up to 267 mg/kg in

Indium oxide based fiber optic SPR sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, Sarika; Sharma, Navneet K., E-mail: navneetk.sharma@jiit.ac.in

2016-05-06

Surface plasmon resonance based fiber optic sensor using indium oxide layer is presented and theoretically studied. It has been found that with increase in thickness of indium oxide layer beyond 170 nm, the sensitivity of SPR sensor decreases. 170 nm thick indium oxide layer based SPR sensor holds maximum sensitivity.

In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

NASA Astrophysics Data System (ADS)

Swint, Amy Lynn

Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at

Nanostructured metal sulfides for energy storage

NASA Astrophysics Data System (ADS)

Rui, Xianhong; Tan, Huiteng; Yan, Qingyu

2014-08-01

Advanced electrodes with a high energy density at high power are urgently needed for high-performance energy storage devices, including lithium-ion batteries (LIBs) and supercapacitors (SCs), to fulfil the requirements of future electrochemical power sources for applications such as in hybrid electric/plug-in-hybrid (HEV/PHEV) vehicles. Metal sulfides with unique physical and chemical properties, as well as high specific capacity/capacitance, which are typically multiple times higher than that of the carbon/graphite-based materials, are currently studied as promising electrode materials. However, the implementation of these sulfide electrodes in practical applications is hindered by their inferior rate performance and cycling stability. Nanostructures offering the advantages of high surface-to-volume ratios, favourable transport properties, and high freedom for the volume change upon ion insertion/extraction and other reactions, present an opportunity to build next-generation LIBs and SCs. Thus, the development of novel concepts in material research to achieve new nanostructures paves the way for improved electrochemical performance. Herein, we summarize recent advances in nanostructured metal sulfides, such as iron sulfides, copper sulfides, cobalt sulfides, nickel sulfides, manganese sulfides, molybdenum sulfides, tin sulfides, with zero-, one-, two-, and three-dimensional morphologies for LIB and SC applications. In addition, the recently emerged concept of incorporating conductive matrices, especially graphene, with metal sulfide nanomaterials will also be highlighted. Finally, some remarks are made on the challenges and perspectives for the future development of metal sulfide-based LIB and SC devices.

In2O3-ZnO heterostructure development in electrical and photoluminescence properties of In2O3 1-D nanostructures

NASA Astrophysics Data System (ADS)

Shariati, M.; Ghafouri, V.

2014-05-01

Indium Oxide quasi one-dimensional (1D) nanostructures known as nanowires and nanorods synthesis using the thermal evaporation method, has been articulated. To nucleate growth sites, substrate seeding promoted 1D nanostructures growth. The catalyst-mediated growth mechanism showed more favorable morphologies and physical properties in under vacuum conditions associated with bottom-up technique. Scanning electron microscopy (SEM) results showed that the Zn-doped 1D nanostructures had spherical caps. The X-ray diffraction (XRD) pattern and energy-dispersive X-ray (EDX) spectrum indicated that these caps intensively associated with ZnO. Therefore, it was reasonable that the vapor-liquid-solid mechanism (VLS) was responsible for the growth of the In2O3-ZnO heterostructure nanowires. This technique enhances optical and electrical properties in nanostructures. The photoluminescence (PL) analysis in Zn-doped In2O3 nanowires and nanorods shows that the intensity of the visible and UV-region emissions overwhelmingly increases and resistance measurement professes the improvement of linear conductance in VLS growth mechanism.

International strategic minerals inventory summary report; tin

USGS Publications Warehouse

Sutphin, D.M.; Sabin, A.E.; Reed, B.L.

1990-01-01

The International Strategic Minerals Inventory tin inventory contains records for 56 major tin deposits and districts in 21 countries. These countries accounted for 98 percent of the 10 million metric tons of tin produced in the period 1934-87. Tin is a good alloying metal and is generally nontoxic, and its chief uses are as tinplate for tin cans and as solder in electronics. The 56 locations consist of 39 lode deposits and 17 placers and contain almost 7.5 million metric tons of tin in identified economic resources (R1E) and another 1.5 million metric tons of tin in other resource categories. Most of these resources are in major deposits that have been known for over a hundred years. Lode deposits account for 44 percent of the R1E and 87 percent of the resources in other categories. Placer deposits make up the remainder. Low-income and middle-income countries, including Bolivia and Brazil and countries along the Southeast Asian Tin Belt such as Malaysia, Thailand, and Indonesia account for 91 percent of the R1E resources of tin and for 61 percent of resources in other categories. The United States has less than 0.05 percent of the world's tin R1E in major deposits. Available data suggest that the Soviet Union may have about 4 percent of resources in this category. The industrial market economy countries of the United States, Japan, Federal Republic of Germany, and the United Kingdom are major consumers of tin, whereas the major tin-producing countries generally consume little tin. The Soviet Union and China are both major producers and consumers of tin. At the end of World War II, the four largest tin-producing countries (Bolivia, the Belgian Congo (Zaire), Nigeria, and Malaysia) produced over 80 percent of the world's tin. In 1986, the portion of production from the four largest producers (Malaysia, Brazil, Soviet Union, Indonesia) declined to about 55 percent, while the price of tin rose from about $1,500 to $18,000 per metric ton. In response to tin shortages

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

NASA Astrophysics Data System (ADS)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Preparing cuprous oxide nanomaterials by electrochemical method for non-enzymatic glucose biosensor

NASA Astrophysics Data System (ADS)

Nguyen, Thu-Thuy; Huy, Bui The; Hwang, Seo-Young; Vuong, Nguyen Minh; Pham, Quoc-Thai; Nghia, Nguyen Ngoc; Kirtland, Aaron; Lee, Yong-Ill

2018-05-01

Cuprous oxide (Cu2O) nanostructure has been synthesized using an electrochemical method with a two-electrode system. Cu foils were used as electrodes and NH2(OH) was utilized as the reducing agent. The effects of pH and applied voltages on the morphology of the product were investigated. The morphology and optical properties of Cu2O particles were characterized using scanning electron microscopy, x-ray diffraction, and diffuse reflectance spectra. The synthesized Cu2O nanostructures that formed in the vicinity of the anode at 2 V and pH = 11 showed high uniform distribution, small size, and good electrochemical sensing. These Cu2O nanoparticles were coated on an Indium tin oxide substrate and applied to detect non-enzyme glucose as excellent biosensors. The non-enzyme glucose biosensors exhibited good performance with high response, good selectivity, wide linear detection range, and a low detection limit at 0.4 μM. Synthesized Cu2O nanostructures are potential materials for a non-enzyme glucose biosensor.

Preparing cuprous oxide nanomaterials by electrochemical method for non-enzymatic glucose biosensor.

PubMed

Nguyen, Thu-Thuy; Huy, Bui The; Hwang, Seo-Young; Vuong, Nguyen Minh; Pham, Quoc-Thai; Nghia, Nguyen Ngoc; Kirtland, Aaron; Lee, Yong-Ill

2018-05-18

Cuprous oxide (Cu 2 O) nanostructure has been synthesized using an electrochemical method with a two-electrode system. Cu foils were used as electrodes and NH 2 (OH) was utilized as the reducing agent. The effects of pH and applied voltages on the morphology of the product were investigated. The morphology and optical properties of Cu 2 O particles were characterized using scanning electron microscopy, x-ray diffraction, and diffuse reflectance spectra. The synthesized Cu 2 O nanostructures that formed in the vicinity of the anode at 2 V and pH = 11 showed high uniform distribution, small size, and good electrochemical sensing. These Cu 2 O nanoparticles were coated on an Indium tin oxide substrate and applied to detect non-enzyme glucose as excellent biosensors. The non-enzyme glucose biosensors exhibited good performance with high response, good selectivity, wide linear detection range, and a low detection limit at 0.4 μM. Synthesized Cu 2 O nanostructures are potential materials for a non-enzyme glucose biosensor.

Fundamental studies of tin whiskering in microelectronics finishes

NASA Astrophysics Data System (ADS)

Pinol, Lesly Agnes

Common electronics materials, such as tin, copper, steel, and brass, are ambient reactive under common use conditions, and as such are prone to corrosion. During the early 1940s, reports of failures due to electrical shorting of components caused by 'whisker' (i.e., filamentary surface protrusion) growth on many surface types---including the aforementioned metals---began to emerge. Lead alloying of tin (3--10% by weight, typically in the eutectic proportion) eliminated whiskering risk for decades, until the July 2006 adoption of the Restriction of Hazardous Substances (RoHS) directive was issued by the European Union. This directive, which has since been adopted by California and parts of China, severely restricted the use of lead (<1000 ppm) in all electrical and electronics equipment being placed on the EU market, imposing the need for developing reliable new "lead-free" alternatives to SnPb. In spite of the abundance of modern-day anecdotes chronicling whisker-related failures in satellites, nuclear power stations, missiles, pacemakers, and spacecraft navigation equipment, pure tin finishes are still increasingly being employed today, and the root cause(s) of tin whiskering remains elusive. This work describes a series of structured experiments exploring the fundamental relationships between the incidence of tin whiskering (as dependent variable) and numerous independent variables. These variables included deposition method (electroplating, electroless plating, template-based electrochemical synthesis, and various physical vapor deposition techniques, including resistive evaporation, electron beam evaporation, and sputtering), the inclusion of microparticles and organic contamination, the effects of sample geometry, and nanostructuring. Key findings pertain to correlations between sample geometry and whisker propensity, and also to the stress evolution across a series of 4"-diameter silicon wafers of varying thicknesses with respect to the degree of post

Mineral of the month: tin

USGS Publications Warehouse

Carlin, James F.

2005-01-01

Tin was one of the first metals discovered by humans and, like most metals, tin is rarely used by itself. Most tin is used as a protective coating or as an alloy with other metals in a diverse range of commercial and defense applications.

Mineral of the month: indium

USGS Publications Warehouse

George, Micheal W.

2004-01-01

Indium was discovered in Germany in 1863. Although it is a lustrous silver-white color, the finders named the new material for the “indigo” spectral lines the mineral created on the spectrograph. Indium ranks 61st in abundance in Earth’s crust and is about three times more abundant than silver or mercury.

InP (Indium Phosphide): Into the future

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

Pechini process-derived tin oxide and tin oxide-graphite composites for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, R.; Lee, Jim Y.; Liu, Z. L.

The Pechini process [Ceram. Bull. 68 (1989) 1002] is used to obtain fine tin oxide powders that reduce the specific volume change in Li + insertion and extraction reactions. The suitability of these tin oxides as active materials for negative electrodes in lithium-ion batteries is investigated. From elemental analysis, it is found that the templating polymer network is almost completely obliterated after heating at 500 °C. The best tin oxide does not exhibit extensive crystallization of tin atoms even after 30 cycles of alloying and de-alloying reactions with Li. The structure and the specific capacity of the oxides are dependent on the heat treatment and remnants of the polymeric CH network can impose an unfavorable outcome. A capacity of 600 mAh g -1, which is unchanged for 30 cycles, can be obtained from tin oxide heat treated at 1000 °C. Composites of graphite and SnO 2 are also prepared and exhibit synergistic interactions between graphite and tin oxide which are similar to those reported previously [Electrochem. Solid State Lett. 3 (2000) 167].

Mineral resource of the month: tin

USGS Publications Warehouse

Carlin, James F.

2011-01-01

Tin was one of the earliest-known metals. Because of its hardening effect on copper, tin was used in bronze implements as early as 3500 B.C. Bronze, a copper-tin alloy that can be sharpened and is hard enough to retain a cutting edge, was used during the Bronze Age in construction tools as well as weapons for hunting and war. The geographical separation between tin-producing and tin-consuming nations greatly influenced the patterns of early trade routes. Historians think that as early as 1500 B.C., Phoenicians traveled by sea to the Cornwall district of England to obtain tin. The pure metal was not used unalloyed until about 600 B.C.

Micro/nano-scale investigation on tin alloys and tin dioxide nanowires

NASA Astrophysics Data System (ADS)

Sun, Yong

Tin (Sn) and its alloys have been at people's service since 3000 BC when bronze (alloy of tin and copper) was produced in large scale. They have unique properties and find applications in various engineering fields. Correspondingly, there is abundant information waiting to be clarified surrounding these Sn-related materials. As the key element used for solder alloys, the properties of Sn alloys have been of great interest to the electronic packaging community. At the same time, the intriguing phenomenon of spontaneous Sn whisker growth from Sn / Sn-alloy thin films have bothered, yet also inspired materials scientists for over 60 years. The most commonly seen Sn-containing compound, SnO 2, is in high demand as well due to its exceptional electronic and chemical properties. In addition, nanostructures of SnO2 are intensively studied for their potential applications as solid-state sensors, transparent conducting materials, lithium-ion batteries, high-efficiency solar cell and recently, supercapacitors. The objective of this proposed research is to explore the amazing properties of Sn and Sn-alloys from several different perspectives. Firstly, ever since the banish of lead in solder alloys, lead-free alloys such as Sn-Ag-Cu (SAC) has been put under the spotlight. We intend to use our expertise in nanomechanics to give an in-depth and thorough investigation on a popular SAC387 alloy. The mechanical properties of each phase and the local deformation mechanisms have been considered. Secondly, the Sn whisker growth phenomenon is to be re-visited. With the aid of digital image correlation (DIC) techniques, it was found that magnitude of the strain gradient plays an important role in whisker growth. Moreover, DIC helps to visualize the dynamic growth process in which the alteration of strain field has been identified to cause growth of subsequent whiskers. Last but not least, the performance of SnO2 nanowires is to be evaluated in several aspects including mechanical

TEM in situ lithiation of tin nanoneedles for battery applications

DOE PAGES

Janish, Matthew T.; Mackay, David T.; Liu, Yang; ...

2015-08-12

Materials such as tin (Sn) and silicon that alloy with lithium (Li) have attracted renewed interest as anode materials in Li-ion batteries. Although their superior capacity to graphite and other intercalation materials has been known for decades, their mechanical instability due to extreme volume changes during cycling has traditionally limited their commercial viability. This limitation is changing as processes emerge that produce nanostructured electrodes. The nanostructures can accommodate the repeated expansion and contraction as Li is inserted and removed without failing mechanically. Recently, one such nano-manufacturing process, which is capable of depositing coatings of Sn “nanoneedles” at low temperature withmore » no template and at industrial scales, has been described. The present work is concerned with observations of the lithiation and delithiation behavior of these Sn nanoneedles during in situ experiments in the transmission electron microscope, along with a brief review of how in situ TEM experiments have been used to study the lithiation of Li-alloying materials. Individual needles are successfully lithiated and delithiated in solid-state half-cells against a Li-metal counter-electrode. Furthermore the microstructural evolution of the needles is discussed, including the transformation of one needle from single-crystal Sn to polycrystalline Sn–Li and back to single-crystal Sn.« less

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

Friction and wear of tin and tin alloys from minus 100 C to 150 C

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1975-01-01

Sliding friction experiments were conducted with an iron (110) single-crystal pin sliding on single and polycrystalline tin and tin alloys. Specimens were examined at various ambient temperatures from -100 to 150 C. Applied loads varied from 1 to 50 grams, and sliding velocity was constant at 0.7 mm/min. Results indicate that the crystal transformation of tin influences the friction coefficient. Friction was higher for the diamond structure (gray tin) than it was for the body-centered tetragonal structure (white tin). Bismuth arrested the crystal transformation, which resulted in constant friction over the temperature range -100 to 150 C. Both copper and aluminum enhanced the kinetics of transformation, with aluminum producing a nearly twofold change in friction with the crystal transformation.

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

NASA Astrophysics Data System (ADS)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes.

PubMed

Son, Kwang Jeong; Kim, Tae Kyoung; Cha, Yu-Jung; Oh, Seung Kyu; You, Shin-Jae; Ryou, Jae-Hyun; Kwak, Joon Seop

2018-02-01

The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changing the DC power voltage from negative to positive bias reduces the forward voltages and enhances the LOP of the LEDs. The positive DC power drastically decreases the electron flux in the plasma obtained by plasma diagnostics using a cutoff probe and a Langmuir probe, suggesting that the repulsion of plasma electrons from the p -GaN surface can reduce plasma-induced damage to the p -GaN. Furthermore, electron-beam irradiation on p -GaN prior to ITO deposition significantly increases the forward voltages, showing that the plasma electrons play an important role in plasma-induced damage to the p -GaN. The plasma electrons can increase the effective barrier height at the ITO/deep-level defect (DLD) band of p -GaN by compensating DLDs, resulting in the deterioration of the forward voltage and LOP. Finally, the plasma damage-free sputtered-ITO TCE enhances the LOP of the LEDs by 20% with a low forward voltage of 2.9 V at 20 mA compared to LEDs with conventional e-beam-evaporated ITO TCE.

Progress and prospects of GaN-based LEDs using nanostructures

NASA Astrophysics Data System (ADS)

Zhao, Li-Xia; Yu, Zhi-Guo; Sun, Bo; Zhu, Shi-Chao; An, Ping-Bo; Yang, Chao; Liu, Lei; Wang, Jun-Xi; Li, Jin-Min

2015-06-01

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication. Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the “Import Outstanding Technical Talent Plan” and “Youth Innovation Promotion Association Program” of the Chinese Academy of Sciences.

Method for producing nanostructured metal-oxides

DOEpatents

Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

2006-01-17

A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe.sup.3+, Cr.sup.3+, Al.sup.3+, Ga.sup.3+, In.sup.3+, Hf.sup.4+, Sn.sup.4+, Zr.sup.4+, Nb.sup.5+, W.sup.6+, Pr.sup.3+, Er.sup.3+, Nd.sup.3+, Ce.sup.3+, U.sup.3+ and Y.sup.3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of Fe.sub.xO.sub.y gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

NASA Astrophysics Data System (ADS)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Formation of crack-free nanoporous tin oxide layers via simple one-step anodic oxidation in NaOH at low applied voltages

NASA Astrophysics Data System (ADS)

Zaraska, Leszek; Gilek, Dominika; Gawlak, Karolina; Jaskuła, Marian; Sulka, Grzegorz D.

2016-12-01

A simple anodic oxidation of metallic tin in fluoride-free alkaline electrolyte at low potentials was proposed as a new and effective strategy for fabrication of crack-free nanoporous tin oxide layers. A low-purity Sn foil (98.8%) was used as a starting material, and a series of anodizations were performed in 1 M NaOH at different conditions such as anodizing potential, and duration of the process. It was proved for the first time that nanostructured tin oxides with ultra-small nanochannels having diameters of <15 nm can be synthesized by simple anodization of metallic tin at a potential of 2 V in 1 M NaOH electrolyte. Increasing anodizing potential to 3 and 4 V allowed for formation of tin oxide layers with much larger pores (40-50 nm in diameter) which were still free from internal cracks and transversal pores. Applying such low potentials significantly reduces the oxide growth rate and suppresses vigorous oxygen evolution at the anode. As a result mechanical deterioration of the oxide structure is prevented while strongly alkaline electrolyte is responsible for formation of the porous layer with completely open pores even at such low potentials. On the contrary, when anodization was carried out at potentials of 5 and 6 V, much faster formation of anodic layer, accompanied by vigorous oxygen gas formation, was observed. In consequence, as grown oxide layers exhibited typical cracked or even stacked internal structure. Finally, we demonstrated for the first time that nanoporous tin oxide layers with segments of different channel sizes can be successfully obtained by simple altering potential during anodization.

Tin Whisker Testing and Modeling

DTIC Science & Technology

2015-11-01

FINAL REPORT Tin Whisker Testing and Modeling SERDP Project WP-1753 NOVEMBER 2015 Stephan J. Meschter Polina Snugovsky BAE Systems...lead (Pb) is that component manufacturers have primarily switched to tin -rich finishes and solder alloys in commercial-off-the-shelf products...Unfortunately, this creates an increased risk of tin whisker formation that can result in undesirable electrical failures unless military and aerospace

Highly sensitive photodetectors based on hybrid 2D-0D SnS{sub 2}-copper indium sulfide quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yun; Zhan, Xueying; Xu, Kai

2016-01-04

Both high speed and efficiency of photoelectric conversion are essential for photodetectors. As an emerging layered metal dichalcogenide (LMD), tin disulfide owns intrinsic faster photodetection ability than most other LMDs but poor light absorption and low photoelectric conversion efficiency. We develop an efficient method to enhance its performance by constructing a SnS{sub 2}-copper indium sulfide hybrid structure. As a result, the responsivity reaches 630 A/W, six times stronger than pristine SnS{sub 2} and much higher than most other LMDs photodetectors. Additionally, the photocurrents are enhanced by more than 1 order of magnitude. Our work may open up a pathway to improvemore » the performance of photodetectors based on LMDs.« less

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

PubMed Central

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; Olvera, María De La Luz

2014-01-01

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered. PMID:28788118

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride.

PubMed

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; De La Luz Olvera, María

2014-07-04

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10 -3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Plasmonic hole arrays for combined photon and electron management

DOE PAGES

Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

2016-11-14

Material architectures that balance optical transparency and electrical conductivity are highly sought after for thin-film device applications. However, these are competing properties, since the electronic structure that gives rise to conductivity typically also leads to optical opacity. Nanostructured metal films that exhibit extraordinary optical transmission, while at the same time being electrically continuous, offer considerable flexibility in the design of their transparency and resistivity. In this paper, we present design guidelines for metal films perforated with arrays of nanometer-scale holes, discussing the consequences of the choice of nanostructure dimensions, of the type of metal, and of the underlying substrate onmore » their electrical, optical, and interfacial properties. We experimentally demonstrate that such films can be designed to have broad-band optical transparency while being an order of magnitude more conductive than indium tin oxide. Finally, prototypical photovoltaic devices constructed with perforated metal contacts convert ~18% of the incident photons, compared to <1% for identical devices having contacts without the hole array.« less

Cross-current leaching of indium from end-of-life LCD panels.

PubMed

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

2015-08-01

Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

Indium: bringing liquid-crystal displays into focus

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.

PubMed

Park, Hyun-Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung-Jun; Kwon, Jang-Yeon; Chung, Kwun-Bum

2017-09-14

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. The electrical properties of the WIZO layers used in the S/D electrode and the active-channel layer were adjusted through oxygen partial pressure during the deposition process. To explain enhancements of the device performance and stability of the homojunction-structured WIZO-TFT, a systematic investigation of correlation between device performance and physical properties at the interface between the active layer and the S/D electrodes such as the contact resistance, surface/interfacial roughness, interfacial-trap density, and interfacial energy-level alignments was conducted. The homojunction-structured WIZO-TFT exhibited a lower contact resistance, smaller interfacial-trap density, and flatter interfacial roughness than the WIZO-TFT with the heterojunction structure. The 0.09 eV electron barrier of the homojunction-structured WIZO-TFT is lower than the 0.21 eV value that was obtained for the heterojunction-structured WIZO-TFT. This reduced electron barrier may be attributed to enhancements of device performance and stability, that are related to the carrier transport.

Indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Structural studies of supported tin catalysts

NASA Astrophysics Data System (ADS)

Nava, Noel; Viveros, Tomás

1999-11-01

Tin oxide was supported on aluminium oxide, titanium oxide, magnesium oxide and silicon oxide, and the resulting interactions between the components in the prepared samples and after reduction were characterized by Mössbauer spectroscopy. It was observed that in the oxide state, tin is present as SnO2 on alumina, magnesia and silica, but on titania tin occupies Ti sites in the structure. After hydrogen treatment at high temperatures, tin is reduced from Sn(4) to Sn(2) on alumina and titania; it is reduced from Sn(4) to Sn(0) on silica, and is practically not reduced on magnesia. These results reveal the degree of interaction between tin and the different supports studied.

Melting of isolated tin nanoparticles

PubMed

Bachels; Guntherodt; Schafer

2000-08-07

The melting of isolated neutral tin cluster distributions with mean sizes of about 500 atoms has been investigated in a molecular beam experiment by calorimetrically measuring the clusters' formation energies as a function of their internal temperature. For this purpose the possibility to adjust the temperature of the clusters' internal degrees of freedom by means of the temperature of the cluster source's nozzle was exploited. The melting point of the investigated tin clusters was found to be lowered by 125 K and the latent heat of fusion per atom is reduced by 35% compared to bulk tin. The melting behavior of the isolated tin clusters is discussed with respect to the occurrence of surface premelting.

48 CFR 204.7202-3 - TINs.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 48 Federal Acquisition Regulations System 3 2013-10-01 2013-10-01 false TINs. 204.7202-3 Section... OF DEFENSE GENERAL ADMINISTRATIVE MATTERS Contractor Identification 204.7202-3 TINs. Requirements for use of TINs are in FAR subpart 4.9. [64 FR 43100, Aug. 9, 1999] ...

48 CFR 204.7202-3 - TINs.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 3 2011-10-01 2011-10-01 false TINs. 204.7202-3 Section... OF DEFENSE GENERAL ADMINISTRATIVE MATTERS Contractor Identification 204.7202-3 TINs. Requirements for use of TINs are in FAR subpart 4.9. [64 FR 43100, Aug. 9, 1999] ...

48 CFR 204.7202-3 - TINs.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 48 Federal Acquisition Regulations System 3 2012-10-01 2012-10-01 false TINs. 204.7202-3 Section... OF DEFENSE GENERAL ADMINISTRATIVE MATTERS Contractor Identification 204.7202-3 TINs. Requirements for use of TINs are in FAR subpart 4.9. [64 FR 43100, Aug. 9, 1999] ...

48 CFR 204.7202-3 - TINs.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 3 2014-10-01 2014-10-01 false TINs. 204.7202-3 Section... OF DEFENSE GENERAL ADMINISTRATIVE MATTERS Contractor Identification 204.7202-3 TINs. Requirements for use of TINs are in FAR subpart 4.9. [64 FR 43100, Aug. 9, 1999] ...

48 CFR 204.7202-3 - TINs.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 3 2010-10-01 2010-10-01 false TINs. 204.7202-3 Section... OF DEFENSE GENERAL ADMINISTRATIVE MATTERS Contractor Identification 204.7202-3 TINs. Requirements for use of TINs are in FAR subpart 4.9. [64 FR 43100, Aug. 9, 1999] ...

Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

DOEpatents

Feng, Tom; Ghosh, Amal K.

1979-01-01

In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

Looking Down Under for a Circular Economy of Indium.

PubMed

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

Structural and optical properties of nanostructured CdSe thin films prepared by electrochemical deposition

NASA Astrophysics Data System (ADS)

Bai, Rekha; Chaudhary, Sujeet; Pandya, Dinesh K.

2018-05-01

Cadmium selenide (CdSe) nanostructured thin films have been grown on fluorine doped tin oxide (FTO) coated glass substrates by potentiostatic electrochemical deposition (ECD) technique for use in solar energy conversion devices. The effect of bath temperature on the structural, morphological and optical properties of prepared CdSe films has been explored. X-ray diffraction (XRD) and Raman spectroscopy clearly show that the CdSe films are polycrystalline and exhibit phase transformation from wurtzite to zincblende structure with increase in bath temperature. Optical spectra reveal that the nanostructured CdSe films have high absorbance in visible region and the films show a red shift in direct optical energy band gap from 1.90 to 1.65 eV with increase in bath temperature due to change in phase and bandgap tuning related to quantum confinement effect.

DARPA Perspectives on Multifunctional Materials/Power and Energy

DTIC Science & Technology

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

Platelet Composite Coatings for Tin Whisker Mitigation

NASA Astrophysics Data System (ADS)

Rohwer, Lauren E. S.; Martin, James E.

2015-11-01

Reliable methods for tin whisker mitigation are needed for applications that utilize tin-plated commercial components. Tin can grow whiskers that can lead to electrical shorting, possibly causing critical systems to fail catastrophically. The mechanisms of tin whisker growth are unclear and this makes prediction of the lifetimes of critical components uncertain. The development of robust methods for tin whisker mitigation is currently the best approach to eliminating the risk of shorting. Current mitigation methods are based on unfilled polymer coatings that are not impenetrable to tin whiskers. In this paper we report tin whisker mitigation results for several filled polymer coatings. The whisker-penetration resistance of the coatings was evaluated at elevated temperature and high humidity and under temperature cycling conditions. The composite coatings comprised Ni and MgF2-coated Al/Ni/Al platelets in epoxy resin or silicone rubber. In addition to improved whisker mitigation, these platelet composites have enhanced thermal conductivity and dielectric constant compared with unfilled polymers.

Nucleation and growth of tin whiskers

NASA Astrophysics Data System (ADS)

Cheng, Jing; Vianco, Paul T.; Zhang, Bei; Li, James C. M.

2011-06-01

Pure tin film of one micron thick was evaporated onto a silicon substrate with chromium and nickel underlayers. The tinned silicon disk was bent by applying a dead load at the center and supported below around the edge to apply biaxial compressive stresses to the tin layer. After 180 C vacuum annealing for 1,2,4,6, and 8 weeks, tin whiskers/hillocks grew. A quantitative method revealed that the overall growth rate decreased with time with a tendency for saturation. A review of the literature showed in general, tin whisker growth has a nucleation period, a growth period and a period of saturation, very similar to recrystallization or phase transformation. In fact we found our data fit Avrami equation very well. This equation shows that the nucleation period was the first week.

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

PubMed

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

PubMed

Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

2016-09-27

The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

Determination of silver, antimony, bismuth, copper, cadmium and indium in ores, concentrates and related materials by atomic-absorption spectrophotometry after methyl isobutyl ketone extraction as iodides.

PubMed

Donaldson, E M; Wang, M

1986-03-01

Methods for determining ~ 0.2 mug g or more of silver and cadmium, ~ 0.5 mug g or more of copper and ~ 5 mug g or more of antimony, bismuth and indium in ores, concentrates and related materials are described. After sample decomposition and recovery of antimony and bismuth retained by lead and calcium sulphates, by co-precipitation with hydrous ferric oxide at pH 6.20 +/- 0.05, iron(III) is reduced to iron(II) with ascorbic acid, and antimony, bismuth, copper, cadmium and indium are separated from the remaining matrix elements by a single methyl isobutyl ketone extraction of their iodides from ~2M sulphuric acid-0.1M potassium iodide. The extract is washed with a sulphuric acid-potassium iodide solution of the same composition to remove residual iron and co-extracted zinc, and the extracted elements are stripped from the extract with 20% v v nitric acid-20% v v hydrogen peroxide. Alternatively, after the removal of lead sulphate by filtration, silver, copper, cadmium and indium can be extracted under the same conditions and stripped with 40% v v nitric acid-25% v v hydrochloric acid. The strip solutions are treated with sulphuric and perchloric acids and ultimately evaporated to dry ness. The individual elements are determined in a 24% v v hydrochloric acid medium containing 1000 mug of potassium per ml by atomic-absorption spectrophotometry with an air-acetylene flame. Tin, arsenic and molybdenum are not co-extracted under the conditions above. Results obtained for silver, antimony, bismuth and indium in some Canadian certified reference materials by these methods are compared with those obtained earlier by previously published methods.

Microemulsion-mediated solvothermal synthesis of tin(IV) hydrogen phosphate rose-like three-dimensional nanostructures and their electrochemical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Hui; He Xiaoyan; Cao Minhua

2009-03-05

Novel rose-like three-dimensional Sn(HPO{sub 4}){sub 2}.H{sub 2}O nanostructures self-assembled by tightly stacked nanopetals were successfully synthesized by a simple cetyltrimethylammonium bromide (CTAB)/water/cyclohexane/n-pentanol microemulsion system under solvothermal conditions for the first time. A series of compared experiments were carried out to investigate the factors that influence the morphology and size of the products. It was found that the molar ratio of water to CTAB and the concentration of SnCl{sub 4} aqueous solution play important roles in the formation of the rose-like nanostructures. A possible formation mechanism of rose-like nanostructures was proposed, which may be related to the crystal structure of Sn(HPO{submore » 4}){sub 2}.H{sub 2}O and the spherical micelles formed by the microemulsion. The electrochemical properties of Sn(HPO{sub 4}){sub 2}.H{sub 2}O were investigated through cyclic voltammetry (CV) measurements. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and field-emission scanning electron microscope (FE-SEM) were used to characterize the products.« less

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

PubMed

Choi, Chang-Hoon; Han, Jaecheon; Park, Jae-Seong; Seong, Tae-Yeon

2013-11-04

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.

Tin resources of Brazil

USGS Publications Warehouse

White, Max Gregg

1974-01-01

Annual tin production in Brazil, most of it from cassiterite placer deposits in Rondonia Territory, amounts to about 4,000 metric tons (4,400 short tons) of concentrate containing 66 percent tin, much of which is consumed by Brazilian industry. Reserves of cassiterite concentrate in the placers of Rondonia district are estimated at about 160,000 (176,000 short tons) containing 66 percent tin. Extensive undiscovered resources of cassiterite possibly exist in southern Rondonia Territory and to the east of the Territory in northern Mato Grosso, southern Amazonas, and southern Para. Numerous occurrences have been reported in these regions and as far to the east as the headwaters of the Tapajos and the Xingo Rivers. Minor deposits or occurrences of cassiterite (or lode deposits about which there is only minimal information available) are located in Para, Amapa, Paraiba, Rio Grande do Norte, Ceara, Bahia, Minas Gerais, Goias, Sao Paulo, and Rio Grande do Sul. All the lode tin deposits are dated or enclosed in rocks that date as Precambrian B (900 to 1,300 m.y.).

Co-precipitation synthesis of nano-composites consists of zinc and tin oxides coatings on glass with enhanced photocatalytic activity on degradation of Reactive Blue 160 KE2B.

PubMed

Habibi, Mohammad Hossein; Mardani, Maryam

2015-02-25

Nano-composite containing zinc oxide-tin oxide was obtained by a facile co-precipitation route using tin chloride tetrahydrate and zinc chloride as precursors and coated on glass by Doctor Blade deposition. The crystalline structure and morphology of composites were evaluated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The XRD results showed peaks relative to zinc oxide with hexagonal wurtzite structure and tin oxide with tetragonal structure. FESEM observations showed that the nano-composite consisted of aggregates of particles with an average particle size of 18 nm. The photocatalytic activity of the pure SnO2, pure ZnO, ZnSnO3-Zn2SnO4 and ZnO-SnO2 nano-structure thin films was examined using the degradation of a textile dye Reactive Blue 160 (KE2B). ZnO-SnO2 nano-composite showed enhanced photo-catalytic activity than the pure zinc oxide and tin oxide. The enhanced photo-catalytic activity of the nano-composite was ascribed to an improved charge separation of the photo-generated electron-hole pairs. Copyright © 2014 Elsevier B.V. All rights reserved.

Platelet composite coatings for tin whisker mitigation

DOE PAGES

Rohwer, Lauren E. S.; Martin, James E.

2015-09-14

In this study, reliable methods for tin whisker mitigation are needed for applications that utilize tin-plated commercial components. Tin can grow whiskers that can lead to electrical shorting, possibly causing critical systems to fail catastrophically. The mechanisms of tin whisker growth are unclear and this makes prediction of the lifetimes of critical components uncertain. The development of robust methods for tin whisker mitigation is currently the best approach to eliminating the risk of shorting. Current mitigation methods are based on unfilled polymer coatings that are not impenetrable to tin whiskers. In this paper we report tin whisker mitigation results formore » several filled polymer coatings. The whisker-penetration resistance of the coatings was evaluated at elevated temperature and high humidity and under temperature cycling conditions. The composite coatings comprised Ni and MgF 2-coated Al/Ni/Al platelets in epoxy resin or silicone rubber. In addition to improved whisker mitigation, these platelet composites have enhanced thermal conductivity and dielectric constant compared with unfilled polymers.« less

Combined flame and solution synthesis of nanoscale tungsten-oxide and zinc/tin-oxide heterostructures

NASA Astrophysics Data System (ADS)

Dong, Zhizhong; Huo, Di; Kear, Bernard H.; Tse, Stephen D.

2015-12-01

Heterostructures of tungsten-oxide nanowires decorated with zinc/tin-oxide nanostructures are synthesized via a combined flame and solution synthesis approach. Vertically well-aligned tungsten-oxide nanowires are grown on a tungsten substrate by a flame synthesis method. Here, tetragonal WO2.9 nanowires (diameters of 20-50 nm, lengths >10 μm, and coverage density of 109-1010 cm-2) are produced by the vapor-solid mechanism at 1720 K. Various kinds of Zn/Sn-oxide nanostructures are grown or deposited on the WO2.9 nanowires by adjusting the Sn2+ : Zn2+ molar ratio in an aqueous ethylenediamine solution at 65 °C. With WO2.9 nanowires serving as the base structures, sequential growth or deposition on them of hexagonal ZnO nanoplates, Zn2SnO4 nanocubes, and SnO2 nanoparticles are attained for Sn2+ : Zn2+ ratios of 0 : 1, 1 : 10, and 10 : 1, respectively, along with different saturation conditions. High-resolution transmission electron microscopy of the interfaces at the nanoheterojunctions shows abrupt interfaces for ZnO/WO2.9 and Zn2SnO4/WO2.9, despite lattice mismatches of >20%.

Investigations of inorganic and hybrid inorganic-organic nanostructures

NASA Astrophysics Data System (ADS)

Kam, Kinson Chihang

This thesis focuses on the exploratory synthesis and characterization of inorganic and hybrid inorganic-organic nanomaterials. In particular, nanostructures of semiconducting nitrides and oxides, and hybrid systems of nanowire-polymer composites and framework materials, are investigated. These materials are characterized by a variety of techniques for structure, composition, morphology, surface area, optical properties, and electrical properties. In the study of inorganic nanomaterials, gallium nitride (GaN), indium oxide (In2O3), and vanadium dioxide (VO2) nanostructures were synthesized using different strategies and their physical properties were examined. GaN nanostructures were obtained from various synthetic routes. Solid-state ammonolysis of metastable gamma-Ga2O 3 nanoparticles was found to be particularly successful; they achieved high surface areas and photoluminescent study showed a blue shift in emission as a result of surface and size defects. Similarly, In2O3 nanostructures were obtained by carbon-assisted solid-state syntheses. The sub-oxidic species, which are generated via a self-catalyzed vapor-liquid-solid mechanism, resulted in 1D nanostructures including nanowires, nanotrees, and nanobouquets upon oxidation. On the other hand, hydrothermal methods were used to obtain VO2 nanorods. After post-thermal treatment, infrared spectroscopy demonstrated that these nanorods exhibit a thermochromic transition with temperature that is higher by ˜10°C compared to the parent material. The thermochromic behavior indicated a semiconductor-to-metal transition associated with a structural transformation from monoclinic to rutile. The hybrid systems, on the other hand, enabled their properties to be tunable. In nanowire-polymer composites, zinc oxide (ZnO) and silver (Ag) nanowires were synthesized and incorporated into polyaniline (PANI) and polypyrrole (PPy) via in-situ and ex-situ polymerization method. The electrical properties of these composites are

Indium adhesion provides quantitative measure of surface cleanliness

NASA Technical Reports Server (NTRS)

Krieger, G. L.; Wilson, G. J.

1968-01-01

Indium tipped probe measures hydrophobic and hydrophilic contaminants on rough and smooth surfaces. The force needed to pull the indium tip, which adheres to a clean surface, away from the surface provides a quantitative measure of cleanliness.

Reflectance of metallic indium for solar energy applications

NASA Technical Reports Server (NTRS)

Bouquet, F. L.; Hasegawa, T.

1984-01-01

An investigation has been conducted in order to compile quantitative data on the reflective properties of metallic indium. The fabricated samples were of sufficiently high quality that differences from similar second-surface silvered mirrors were not apparent to the human eye. Three second-surface mirror samples were prepared by means of vacuum deposition techniques, yielding indium thicknesses of approximately 1000 A. Both hemispherical and specular measurements were made. It is concluded that metallic indium possesses a sufficiently high specular reflectance to be potentially useful in many solar energy applications.

Tin recycling in the United States in 1998

USGS Publications Warehouse

Carlin, James F.

2001-01-01

This materials flow study includes a description of tin supply and demand factors for the United States to illustrate the extent of tin recycling and to identify recycling trends. Understanding the flow of materials from source to ultimate disposition can assist in improving the management of the use of natural resources in a manner that is compatible with sound environmental practices. The quantity of tin recycled in 1998 as a percentage of apparent tin supply was estimated to be about 22%, and recycling efficiency was estimated to be 75%. Of the total tin consumed in products for the U.S. market in 1998, an estimated 12% was consumed in products where the tin was not recyclable (dissipative uses).

Enhanced photoelectrochemical performance and photocatalytic activity of ZnO/TiO2 nanostructures fabricated by an electrostatically modified electrospinning

NASA Astrophysics Data System (ADS)

Ramos, Pierre G.; Flores, Edson; Sánchez, Luis A.; Candal, Roberto J.; Hojamberdiev, Mirabbos; Estrada, Walter; Rodriguez, Juan

2017-12-01

In this work, ZnO/TiO2 nanostructures were fabricated by an electrostatically modified electrospinning technique using zinc acetate and commercially available TiO2-P25, polyvinyl alcohol, and a solvent. The ZnO/TiO2 nanostructures were fabricated on fluorine-doped tin oxide (FTO) glass substrate by electrospinning of aqueous solution containing different amounts of zinc acetate. The TiO2-P25 nanoparticles were immobilized within zinc acetate/PVA nanofibers. The precursor nanofibers obtained were converted into polycrystalline ZnO and ZnO/TiO2 by calcination at 600 °C. The structure and morphology of the obtained nanostructures were characterized by X-ray diffraction and field emission scanning electron microscopy, respectively. It was found that the TiO2-P25 nanoparticles were attached to the ZnO nanostructures, and the mean diameter of the nanoparticles forming the nanostructures ranged from 31 to 52 nm with increasing the amount of zinc acetate. The incident photon-to-current efficiency (IPCE) spectra of the fabricated nanostructures were measured in a three-electrode cell. The photocatalytic activities of ZnO and ZnO/TiO2 nanostructures were evaluated toward the decomposition of methyl orange. The obtained results evidenced that the coupling of TiO2 with ZnO enhanced the IPCE and improved the photocatalytic activity of ZnO. Particularly, the ZnO/TiO2 nanostructures fabricated with a zinc acetate-to-PVA ratio of 2:3 exhibited the highest IPCE and photocatalytic activity.

Strategies to indium nitride and gallium nitride nanoparticles: Low-temperature, solution-phase and precursor routes

NASA Astrophysics Data System (ADS)

Dingman, Sean Douglas

I present new strategies to low-temperature solution-phase synthesis of indium and gallium nitride (InN and GaN) ceramic materials. The strategies include: direct conversion of precursor molecules to InN by pyrolysis, solution-phase synthesis of nanostructured InN fibers via molecular precursors and co-reactants, and synthesis of powders through reactions derived from molten-salt chemistry. Indium nitride powders are prepared by pyrolysis of the precursors R 2InN3 (R = t-Bu (1), i-Amyl(2), Et(3), i-Pr( 4)). The precursors are synthesized via azide-alkoxide exchange of R2InOMe with Me3SiN3. The precursors are coordination polymers containing five-coordinate indium centers. Pyrolysis of 1 and 2 under N2 at 400°C yields powders consisting primarily of InN with average crystal sizes of 15--35 nm. 1 yields nanocrystalline InN with average particle sizes of 7 nm at 250°C. 3 and 4 yield primarily In metal from pyrolysis. Refluxing 1 in diisopropylbenzene (203°C) in the presence of primary amines yields InN nanofibers 10--100 nm in length. InN nanofibers of up to 1 mum can be synthesized by treating 1 with 1,1-dimethylhydrazine (DMHy) The DMHy appears to control the fiber length by acting as a secondary source of active nitrogen in order to sustain fiber growth. The resulting fibers are attached to droplets of indium metal implying a solution-liquid-solid growth mechanism. Precursor 4 yields crystalline InN whiskers when reacted with DMHy. Reactions of 4 with reducing agents such as HSnBu3, yield InN nanoparticles with an average crystallite size of 16 nm. Gallium precursors R2GaN3 (R = t-Bu( 5), Me3SiCH2(6) and i-Pr( 7)), synthesized by azide-alkoxide exchange, are found to be inert toward solution decomposition and do not yield GaN. These compounds are molecular dimers and trimers unlike the indium analogs. Compound 6 displays a monomer-dimer equilibrium in benzene solution, but exists as a solid-state trimer. InN powders are also synthesized by reactions of InCl3 and

Electrochemical mechanism of tin membrane electrodeposition under ultrasonic waves.

PubMed

Nan, Tianxiang; Yang, Jianguang; Chen, Bing

2018-04-01

Tin was electrodeposited from chloride solutions using a membrane cell under ultrasonic waves. Cyclic voltammetry (CV), linear sweep voltammetry (LSV), chronoamperometry (CHR), and chronopotentiometry were applied to investigate the electrochemical mechanism of tin electrodeposition under ultrasonic field. Chronoamperometry curves showed that the initial process of tin electrodeposition followed the diffusion controlled three-dimensional nucleation and grain growth mechanism. The analysis of the cyclic voltammetry and linear sweep voltammetry diagrams showed that the application of ultrasound can change the tin membrane electro-deposition reaction from diffusion to electrochemical control, and the optimum parameters for tin electrodeposition were H + concentration 3.5 mol·L -1 , temperature 35 °C and ultrasonic power 100 W. The coupling ultrasonic field played a role in refining the grain in this process. The growth of tin crystals showed no orientation preferential, and the tin deposition showed a tendency to form a regular network structure after ultrasonic coupling. While in the absence of ultrasonic coupling, the growth of tin crystals has a high preferential orientation, and the tin deposition showed a tendency to form tin whiskers. Ultrasonic coupling was more favorable for obtaining a more compact and smoother cathode tin layer. Copyright © 2017 Elsevier B.V. All rights reserved.

40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE... subcategory. The provisions of this subpart are applicable to discharges resulting from the production of indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw...

Silver-tin alloys and amalgams: electrochemical considerations.

PubMed

Mueller, H J

1980-01-01

The corrosion potential and anodic polarization profiles of a representative number of silver-tin alloys and their corresponding amalgams in a physiological solution were determined and compared to their microstructures. For the alloys with tin-content greater than 27%(wt) and for all amalgams, the corrosion process is related to the attack of free tin for the alloys and to the gamma-2 tin for the amalgams. The gamma-2 concentration in the amalgams increases with an increase in tin-content. For alloys with tin-content less than 27%, the corrosion process is even more restricted than for the process observed with pure silver. From a developed theory based upon the potential-time and polarization results, association of the O2 reduction process on a SnO cathodic film to an intermediate specie of H2O2 is made. The rate of H2O2 decomposition on a SnO surface in a four electron process is thought to control the O2 reduction overvoltage. The O2 reduction overvoltage decreases with increases in the silver-content of the amalgam, particularily seen with the 8 and 12% tin compositions. Due to the polarization induced corrosion process, a phase with high silver and high mercury concentrations was observed over the unreacted particles.

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Epigenetic lead, zinc, silver, antimony, tin, and gold veins in Boulder Basin, Blaine and Custer counties, Idaho; potential for economic tin mineralization

USGS Publications Warehouse

Ratchford, Michael E.

2002-01-01

Boulder Basin is in a northwest-trending belt of allochthonous Paleozoic rocks in the Boulder Mountains of central Idaho. Regional Tertiary extension resulted in widespread normal faulting and coeval emplacement of shallow-level intrusions and extrusive rocks of the Challis Volcanic Group. Epigenetic lead-zinc-silver-antimony-tin-gold vein deposits formed during Tertiary extension and are hosted within Paleozoic strata. The major orebodies are in the lower plate of the Boulder Basin thrust fault, in massive quartzite of the Middle Pennsylvanian to Lower Permian Wood River Formation. Anomalous concentrations of tin are present in the base-metal mineral assemblage of the Boulder Basin ore deposits. The tin-bearing veins in Boulder Basin are strikingly similar to Bolivian tin deposits. The deposit model for Bolivian tin deposits identifies buried tin porphyry below the tin-bearing vein system.

MOCVD growth of gallium nitride with indium surfactant

NASA Astrophysics Data System (ADS)

Won, Dong Jin

In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

PubMed

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-02

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

NASA Astrophysics Data System (ADS)

Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

2017-06-01

We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

Solderability of pre-tinned Cu sheet

NASA Astrophysics Data System (ADS)

Sunwoo, A. J.; Morris, J. W.; Lucey, G. K.

1992-05-01

The reliability and integrity of pre-tinned copper-clad printed circuit (PC) boards are serious concerns in the manufacture of electronic devices. The factors that influence the wetting during soldering of Cu are discussed. The results suggest that pre-tinning with a Pb-rich solder, such as 95Pb-5Sn, is preferred to pre-tinning with eutectic solder, since the latter can develop exposed intermetallics during aging that wet poorly. The results also confirm that the use of flux leads to carbon contamination in the solder.

Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys

DTIC Science & Technology

2010-03-01

OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS...Government. AFIT/GAP/ENP/10-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS Presented to...ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS Austin C Bergstrom, BS 2 nd Lieutenant, USAF

Indium sealing techniques.

NASA Technical Reports Server (NTRS)

Hochuli, U.; Haldemann, P.

1972-01-01

Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

Tin-silver-bismuth solders for electronics assembly

DOEpatents

Vianco, Paul T.; Rejent, Jerome A.

1995-01-01

A lead-free solder alloy for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218.degree. C. down to about 205.degree. C. depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10.degree. C./min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight).

Tin-silver-bismuth solders for electronics assembly

DOEpatents

Vianco, P.T.; Rejent, J.A.

1995-08-08

A lead-free solder alloy is disclosed for electronic assemblies composed of a eutectic alloy of tin and silver with a bismuth addition, x, of 0tin effective to depress the melting point of the tin-silver composition to a desired level. Melting point ranges from about 218 C down to about 205 C depending an the amount of bismuth added to the eutectic tin-silver alloy as determined by DSC analysis, 10 C/min. A preferred alloy composition is 91.84Sn-3.33Ag-4.83Bi (weight percent based on total alloy weight). 4 figs.

The Availability of Indium: The Present, Medium Term, and Long Term

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Low Pressure Synthesis of Indium Phosphide,

DTIC Science & Technology

1982-04-01

UNCLASSIFIED F/G 713 M EEEEEEEEEII MEEMMMME W , 2~ h IW 𔃼 * ).I 2 MICROCOP RESOWI1OW TWS CHAT . . WROmNA RUIEJ MT STHDMS-W3-ALORMO TNDM- m &6.4. MM RO - TMS...pNode . M-V Semiconductor compound ’S.T o a.ek* !cm .. EImd’b lc a ..... . P Pocry sline large g rain .bgot of indiumn phosphide have been synthe- simed...indium temperature of 1003"C. 2. BACKGROUND .r. Indium phosphide is a compound composed of elements from the third and fifth columns of the periodic

Cornish Tin Mining and Smelting

ERIC Educational Resources Information Center

Gardner, Rebecca

2010-01-01

In this article, the author describes how Cornwall was once the world's leading producer of tin. Cornwall's industrial past is now a World Heritage Site alongside the Grand Canyon or the Great Wall of China. A hint is in the Cornish flag, a simple white cross against a black background, also known as Saint Piran's flag. At Geevor Tin Mine, one of…

Preparation of textural lamellar tin deposits via electrodeposition

NASA Astrophysics Data System (ADS)

Wen, Xiaoyu; Pan, Xiaona; Wu, Libin; Li, Ruinan; Wang, Dan; Zhang, Jinqiu; Yang, Peixia

2017-06-01

Lamellar tin deposits were prepared by galvanostatical electroplating from the aqueous acidic-sulfate bath, with gelatin and benzalacetone dissolved in ethanol (ABA+EtOH) as additive, and their morphologies were investigated by scanning electron microscopy. Cathodic polarization curves revealed that the absorbability of ABA+EtOH on the cathode surface was higher than that of gelatin. X-ray diffraction analysis indicated preferred orientations of tin growth led to the formation of lamellar structure and distortion of tin lattice. The growth mechanism of lamellar tin was also discussed.

Molten tin reprocessing of spent nuclear fuel elements

DOEpatents

Heckman, Richard A.

1983-01-01

A method and apparatus for reprocessing spent nuclear fuel is described. Within a containment vessel, a solid plug of tin and nitride precipitates supports a circulating bath of liquid tin therein. Spent nuclear fuel is immersed in the liquid tin under an atmosphere of nitrogen, resulting in the formation of nitride precipitates. The layer of liquid tin and nitride precipitates which interfaces the plug is solidified and integrated with the plug. Part of the plug is melted, removing nitride precipitates from the containment vessel, while a portion of the plug remains solidified to support the liquid tin and nitride precipitates remaining in the containment vessel. The process is practiced numerous times until substantially all of the precipitated nitrides are removed from the containment vessel.

Emerging Novel Metal Electrodes for Photovoltaic Applications.

PubMed

Lu, Haifei; Ren, Xingang; Ouyang, Dan; Choy, Wallace C H

2018-04-01

Emerging novel metal electrodes not only serve as the collector of free charge carriers, but also function as light trapping designs in photovoltaics. As a potential alternative to commercial indium tin oxide, transparent electrodes composed of metal nanowire, metal mesh, and ultrathin metal film are intensively investigated and developed for achieving high optical transmittance and electrical conductivity. Moreover, light trapping designs via patterning of the back thick metal electrode into different nanostructures, which can deliver a considerable efficiency improvement of photovoltaic devices, contribute by the plasmon-enhanced light-mattering interactions. Therefore, here the recent works of metal-based transparent electrodes and patterned back electrodes in photovoltaics are reviewed, which may push the future development of this exciting field. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced photoelectrochemical and photocatalytic activity of WO3-surface modified TiO2 thin film

NASA Astrophysics Data System (ADS)

Qamar, Mohammad; Drmosh, Qasem; Ahmed, Muhammad I.; Qamaruddin, Muhammad; Yamani, Zain H.

2015-02-01

Development of nanostructured photocatalysts for harnessing solar energy in energy-efficient and environmentally benign way remains an important area of research. Pure and WO3-surface modified thin films of TiO2 were prepared by magnetron sputtering on indium tin oxide glass, and photoelectrochemical and photocatalytic activities of these films were studied. TiO2 particles were <50 nm, while deposited WO3 particles were <20 nm in size. An enhancement in the photocurrent was observed when the TiO2 surface was modified WO3 nanoparticles. Effect of potential, WO3 amount, and radiations of different wavelengths on the photoelectrochemical activity of TiO2 electrodes was investigated. Photocatalytic activity of TiO2 and WO3-modified TiO2 for the decolorization of methyl orange was tested.

Synthesis of tin-containing polyimide films

NASA Technical Reports Server (NTRS)

Ezzell, S. A.; Taylor, L. T.

1984-01-01

A series of tin-containing polyimide films derived from either 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride or pyromellitic dianhydride and 4,4'-oxydianiline have been synthesized and their electrical properties examined. Highest quality materials (i.e., homogeneous, smooth surface, flexible) with the best electrical properties were doped with either SnCl2.2H2O or (n-Bu)2SnCl2. In all cases, extensive reactivity of the tin dopant with water, air or polyamic acid during imidization is observed. Lowered electrical surface resistivities appear to be correlatable with the presence of surface tin oxide on the film surface.

POLAROGRAPHIC BEHAVIOUR OF INDIUM IN THE PRESENCE OF TRIHYDROXYGLUTARIC ACID (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinogradova, E.N.; An, C.

1961-09-01

The polarographic behavtor ot indium in the presence of trihydroxyglutaric acid in acid, nautral, and alkalino media was studied. The vaIue of the half-wave potental of a simple indium ion was determined in HClO/sub 4/ by the half-peak: potential during the anodic dissolutaon of and indium from an amalgam. The half-wave potential is eqia; tp 0.488 v. The effect of the concentration of trihydroxyglutaric acido on the E/sub 1/2/ of indium was studied. It was found that the regular shift of E/sub 1/2/ on changing the concentration of trihydroxyglutaric acid is observed only at pH 4 and pH ll. Themore » coordination number p = 2 and the unstability constant for the indium-trihydroxyglutaric aeid eonnplex at pH 4 were found. K (mean) is (9.73 plus or minus 0.82) x 10/sup - 11/. It was established that the process of indium reduction at pH 11 is irreversible. A method was suggested for the polarographic determination of indium and cadmium, when present together, in trihydroxyglutaric acid at pH 3 and pH 9. (auth)« less

40 CFR 421.290 - Applicability: Description of the secondary tin subcategory.

Code of Federal Regulations, 2012 CFR

2012-07-01

... secondary tin subcategory. 421.290 Section 421.290 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Tin Subcategory § 421.290 Applicability: Description of the secondary tin subcategory. The provisions of this subpart are applicable to discharges resulting from the production of tin at secondary tin...

40 CFR 421.290 - Applicability: Description of the secondary tin subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... secondary tin subcategory. 421.290 Section 421.290 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Tin Subcategory § 421.290 Applicability: Description of the secondary tin subcategory. The provisions of this subpart are applicable to discharges resulting from the production of tin at secondary tin...

40 CFR 421.290 - Applicability: Description of the secondary tin subcategory.

Code of Federal Regulations, 2013 CFR

2013-07-01

... secondary tin subcategory. 421.290 Section 421.290 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Tin Subcategory § 421.290 Applicability: Description of the secondary tin subcategory. The provisions of this subpart are applicable to discharges resulting from the production of tin at secondary tin...

40 CFR 421.290 - Applicability: Description of the secondary tin subcategory.

Code of Federal Regulations, 2011 CFR

2011-07-01

... secondary tin subcategory. 421.290 Section 421.290 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Tin Subcategory § 421.290 Applicability: Description of the secondary tin subcategory. The provisions of this subpart are applicable to discharges resulting from the production of tin at secondary tin...

40 CFR 421.290 - Applicability: Description of the secondary tin subcategory.

Code of Federal Regulations, 2014 CFR

2014-07-01

... secondary tin subcategory. 421.290 Section 421.290 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY... Tin Subcategory § 421.290 Applicability: Description of the secondary tin subcategory. The provisions of this subpart are applicable to discharges resulting from the production of tin at secondary tin...

Quantification of indium in steel using PIXE

NASA Astrophysics Data System (ADS)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J. C.

1989-04-01

The quantitative analysis of steel for endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important.

Geochemistry of tin in rivers and estuaries

NASA Astrophysics Data System (ADS)

Byrd, James T.; Andreae, Meinrat O.

1986-05-01

On the basis of measurements from a large number of rivers from pristine and polluted regions, we estimate the riverine fluxes of tin to the oceans to be 0.76 × 10 6molyr-1 for the dissolved fraction and 300-600 × 10 6 mol yr -1 for the paniculate fraction. The paniculate flux agrees with the flux calculated from denudation rates. Estuaries were found not to have a large effect upon the transport of tin to the oceans. Evidence for the remobilization of tin was found in an estuary that is highly polluted with tin from mining and smelting activities. Monobutyltin was found to be present in polluted estuaries and is presumed to be a degradation product of tributyltin additives to antifouling paint.

Emerging transparent electrodes based on thin films of carbon nanotubes, graphene, and metallic nanostructures.

PubMed

Hecht, David S; Hu, Liangbing; Irvin, Glen

2011-04-05

Transparent electrodes are a necessary component in many modern devices such as touch screens, LCDs, OLEDs, and solar cells, all of which are growing in demand. Traditionally, this role has been well served by doped metal oxides, the most common of which is indium tin oxide, or ITO. Recently, advances in nano-materials research have opened the door for other transparent conductive materials, each with unique properties. These include CNTs, graphene, metal nanowires, and printable metal grids. This review will explore the materials properties of transparent conductors, covering traditional metal oxides and conductive polymers initially, but with a focus on current developments in nano-material coatings. Electronic, optical, and mechanical properties of each material will be discussed, as well as suitability for various applications. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method for enhancing the solubility of boron and indium in silicon

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2002-01-01

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warner, Ellis J.; Gladfelter, Wayne L., E-mail: wlg@umn.edu; Johnson, Forrest

Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. %more » Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.« less

Facile and Rapid Growth of Nanostructured Ln-BTC Metal-Organic Framework Films by Electrophoretic Deposition for Explosives sensing in Gas and Cr 3+ Detection in Solution.

PubMed

Feng, Ji-Fei; Yang, Xue; Gao, Shui-Ying; Shi, Jianlin; Cao, Rong

2017-12-19

Until now, it has been a challenge to prepare lanthanide metal-organic framework films on traditional substrates, like zinc plate, indium oxide (ITO), and fluorine-doped tin oxide (FTO) glasses in a rapid and facile method. In this paper, continuous and dense Ln-BTC MOFs films on unmodified low-cost substrates have been rapidly and easily fabricated though the newly developed electrophoretic deposition (EPD) method in 5 min. Moreover, the as-prepared luminescent films were successfully used for the detection of nitrobenzene (NB), trinitrotoluene (TNT) in gas phases, as well as NB, Cr 3+ ions for detection in solution.

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Method for forming indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Microwave plasma CVD of NANO structured tin/carbon composites

DOEpatents

Marcinek, Marek [Warszawa, PL; Kostecki, Robert [Lafayette, CA

2012-07-17

A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

99M-Technetium labeled tin colloid radiopharmaceuticals

DOEpatents

Winchell, Harry S.; Barak, Morton; Van Fleet, III, Parmer

1976-07-06

An improved 99m-technetium labeled tin(II) colloid, size-stabilized for reticuloendothelial organ imaging without the use of macromolecular stabilizers and a packaged tin base reagent and an improved method for making it are disclosed.

Strategies to Reduce Tin and Other Metals in Electronic Cigarette Aerosol

PubMed Central

Williams, Monique; To, An; Bozhilov, Krassimir; Talbot, Prue

2015-01-01

Background Metals are present in electronic cigarette (EC) fluid and aerosol and may present health risks to users. Objective The objective of this study was to measure the amounts of tin, copper, zinc, silver, nickel and chromium in the aerosol from four brands of EC and to identify the sources of these metals by examining the elemental composition of the atomizer components. Methods Four brands of popular EC were dissected and the cartomizers were examined microscopically. Elemental composition of cartomizer components was determined using integrated energy dispersive X-ray microanalysis, and the concentrations of the tin, copper, zinc silver, nickel, and chromium in the aerosol were determined for each brand using inductively coupled plasma optical emission spectroscopy. Results All filaments were made of nickel and chromium. Thick wires were copper coated with either tin or silver. Wires were joined to each other by tin solder, brazing, or by brass clamps. High concentrations of tin were detected in the aerosol when tin solder joints were friable. Tin coating on copper wires also contributed to tin in the aerosol. Conclusions Tin concentrations in EC aerosols varied both within and between brands. Tin in aerosol was reduced by coating the thick wire with silver rather than tin, placing stable tin solder joints outside the atomizing chamber, joining wires with brass clamps or by brazing rather than soldering wires. These data demonstrate the feasibility of removing tin and other unwanted metals from EC aerosol by altering designs and using materials of suitable quality. PMID:26406602

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Significant vertical phase separation in solvent-vapor-annealed poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) composite films leading to better conductivity and work function for high-performance indium tin oxide-free optoelectronics.

PubMed

Yeo, Jun-Seok; Yun, Jin-Mun; Kim, Dong-Yu; Park, Sungjun; Kim, Seok-Soon; Yoon, Myung-Han; Kim, Tae-Wook; Na, Seok-In

2012-05-01

In the present study, a novel polar-solvent vapor annealing (PSVA) was used to induce a significant structural rearrangement in poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films in order to improve their electrical conductivity and work function. The effects of polar-solvent vapor annealing on PEDOT:PSS were systematically compared with those of a conventional solvent additive method (SAM) and investigated in detail by analyzing the changes in conductivity, morphology, top and bottom surface composition, conformational PEDOT chains, and work function. The results confirmed that PSVA induces significant phase separation between excess PSS and PEDOT chains and a spontaneous formation of a highly enriched PSS layer on the top surface of the PEDOT:PSS polymer blend, which in turn leads to better 3-dimensional connections between the conducting PEDOT chains and higher work function. The resultant PSVA-treated PEDOT:PSS anode films exhibited a significantly enhanced conductivity of up to 1057 S cm(-1) and a tunable high work function of up to 5.35 eV. The PSVA-treated PEDOT:PSS films were employed as transparent anodes in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs). The cell performances of organic optoelectronic devices with the PSVA-treated PEDOT:PSS anodes were further improved due to the significant vertical phase separation and the self-organized PSS top surface in PSVA-treated PEDOT:PSS films, which can increase the anode conductivity and work function and allow the direct formation of a functional buffer layer between the active layer and the polymeric electrode. The results of the present study will allow better use and understanding of polymeric-blend materials and will further advance the realization of high-performance indium tin oxide (ITO)-free organic electronics.

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

Reductive spectrophotometry of divalent tin sensitization on soda lime glass

NASA Astrophysics Data System (ADS)

Bejugam, Vinith; Wei, Xingfei; Roper, D. Keith

2016-07-01

Rapid and facile evaluation of tin (II) sensitization could lead to improved understanding of metal deposition in electroless (EL) plating. This report used a balanced redox reaction between 3,3‧,5,5‧-tetramethylbenzidine dihydrochloride (TMB-HCL) and N-bromosuccinimide (NBS) to evaluate effects of sensitization conditions (i.e., sensitization time, analyte concentration, aqueous immersion, and acid content) on the accumulated mass of surface-associated divalent tin ion. The accumulated mass of tin (II) increased as the sensitization time increased up to 30 s in proportion to aqueous tin (II) chloride concentrations between 2.6 and 26 mM at a trifluoroacetic acid (TFA) content of 68 mM. The average mass peaked at 7.3 nanomoles (nmol) per cm2 after a 5 s aqueous immersion post-sensitization, and then decreased with increasing aqueous immersion post-sensitization. The total average tin (II) + tin (IV) accumulated on soda lime glass measured by inductively coupled plasma optical emission spectrometry (ICP-OES) was 17% higher at 30 s sensitization, suggesting a fraction of the tin (II) present may have oxidized to tin (IV). These results indicated that in situ spectrophotometric evaluation of tin (II) could support development of EL plating for electronics, catalysis, and solar cells.

Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

PubMed Central

Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

2012-01-01

One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

Telomere dysfunction and cell survival: roles for distinctTIN2-containing complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Sahn-Ho; Davalos, Albert R.; Heo, Seok-Jin

Telomeres are maintained by three DNA binding proteins, TRF1, TRF2 and POT1, and several associated factors. One factor, TIN2, binds TRF1 and TRF2 directly and POT1 indirectly. These and two other proteins form a soluble complex that may be the core telomere-maintenance complex. It is not clear whether subcomplexes exist or function in vivo. Here, we provide evidence for two TIN2 subcomplexes with distinct functions in human cells. TIN2 ablation by RNA interference caused telomere uncapping and p53-independent cell death in all cells tested. However, we isolated two TIN2 complexes from cell lysates, each selectively sensitive to a TIN2 mutantmore » (TIN2-13, TIN2-15C). In cells with wild-type p53 function, TIN2-15C was more potent than TIN2-13 in causing telomere uncapping and eventual growth arrest. In cells lacking p53 function, TIN215C more than TIN2-13 caused genomic instability and cell death. Thus, TIN2 subcomplexes likely have distinct functions in telomere maintenance, and may provide selective targets for eliminating cells with mutant p53.« less

Occult purulent pericarditis detected by indium-111 leukocyte imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenberg, M.L.; Niebulski, H.I.; Uretsky, B.F.

1984-05-01

Leukocyte imaging with indium-111 is a relatively new technique which, to this point in time, has been discussed almost exclusively in the radiologic literature. Although this procedure has been used mainly to detect intra-abdominal infection, the thorax is routinely imaged along with the abdomen, and therefore detection of cardiac disease may be feasible. This case report is of a young woman after liver transplantation who developed occult purulent pericarditis initially detected by a leukocyte scan with indium-111. This case demonstrates that striking pericardial uptake on a whole-body indium-111 leukocyte scan can occur with purulent pericarditis, and it reemphasizes how insidiouslymore » purulent pericarditis may present in an immunosuppressed patient.« less

Effect of impurity on high pressure behavior of nano indium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chitnis, Abhishek, E-mail: abhishekchitnis87@gmail.com; Garg, Nandini; Mishra, A. K.

2015-06-24

Angle dispersive x-ray diffraction studies were carried out on a mixture of nano particles of indium titanate, indium oxide, and disordered TiO{sub 2} upto pressures of ∼ 45 GPa. Our studies show that indium titanate undergoes a partial decomposition to its constituent high pressure oxides. However, concomitantly a very small fraction of indium titanate transforms to a denser phase at ∼ 27.5 GPa. This transformation to new phase was found to be irreversible. At this pressure even cubic In{sub 2}O{sub 3} transformed to the In{sub 2}O{sub 3} (II) (iso-structural to Rh{sub 2}O{sub 3} (II)) phase, without any signature of themore » intermediate corundum phase. The high pressure In{sub 2}O{sub 3} (II) phase transforms to the corundum structure on release of pressure. These studies indicate that the presence of a large fraction of seed impurities could have facilitated the decomposition of indium titanate into its constituent oxides at the cost of its incomplete transformation to the high pressure denser phase.« less

40 CFR 721.10230 - Rutile, tin zinc, calcium doped.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Rutile, tin zinc, calcium doped. 721... Substances § 721.10230 Rutile, tin zinc, calcium doped. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as rutile, tin zinc, calcium-doped (PMN P-06...

40 CFR 721.10230 - Rutile, tin zinc, calcium doped.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Rutile, tin zinc, calcium doped. 721... Substances § 721.10230 Rutile, tin zinc, calcium doped. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as rutile, tin zinc, calcium-doped (PMN P-06...

Observation of indium ion migration-induced resistive switching in Al/Mg{sub 0.5}Ca{sub 0.5}TiO{sub 3}/ITO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Zong-Han; Wang, Yeong-Her, E-mail: yhw@ee.ncku.edu.tw

2016-08-01

Understanding switching mechanisms is very important for resistive random access memory (RRAM) applications. This letter reports an investigation of Al/Mg{sub 0.5}Ca{sub 0.5}TiO{sub 3} (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In{sub 2}O{sub 3} crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of Joint Committee on Powder Diffraction Standards (JCPDS) cards. Finally, a switching mechanism resulting from an electrical field induced by In{sup 3+} ion migration is proposed.more » In{sup 3+} ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.« less

Synthesis of In2O3 nanostructures with different morphologies as potential supercapacitor electrode materials

NASA Astrophysics Data System (ADS)

Tuzluca, Fatma Nur; Yesilbag, Yasar Ozkan; Ertugrul, Mehmet

2018-01-01

In this study performed using a chemical vapor deposition (CVD) system, one-dimensional (1-D) single crystal indium oxide (In2O3) nanotowers, nanobouqets, nanocones, and nanowires were investigated as a candidate for a supercapacitor electrode material. These nanostructures were grown via Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms according to temperature differences (1000-600 °C). The morphologies, growth mechanisms and crystal structures of these 1-D single crystal In2O3 nanostructures were defined by Field Emission Scanning Electron Microscopy (FESEM), High Resolution Transmission Electron Microscopy (HR-TEM), X-Ray Diffraction (XRD) and Raman Spectroscopy analyses. The elemental analyses of the nanostructures were carried out by energy dispersive X-Ray Spectroscopy (EDS); they gave photoluminescence (PL) spectra with 3.39, 2.65, and 1.95 eV band gap values, corresponding to 365 nm, 467 nm, and 633 wavelengths, respectively. The electrochemical performances of these 1-D single crystal In2O3 nanostructures in an aqueous electrolyte solution (1 M Na2SO4) were determined by Cyclic Voltammetry (CV), Galvanostatic Charge Discharge (GCD) and Electrochemical Impedance Spectroscopy (EIS) analyses. According to GCD measurements at 0.04 mA cm-2 current density, areal capacitance values were 10.1 mF cm-2 and 6.7 mF cm-2 for nanotowers, 12.5 mF cm-2 for nanobouquets, 4.9 mF cm-2 for nanocones, and 16.6 mF cm-2 for nanowires. The highest areal capacitance value was observed in In2O3 nanowires, which retained 66.8% of their initial areal capacitance after a 10000 charge-discharge cycle, indicating excellent cycle stability.

40 CFR 721.10231 - Rutile, tin zinc, sodium-doped.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Rutile, tin zinc, sodium-doped. 721... Substances § 721.10231 Rutile, tin zinc, sodium-doped. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as rutile, tin zinc, sodium-doped (PMN P-06-37...

40 CFR 721.10231 - Rutile, tin zinc, sodium-doped.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Rutile, tin zinc, sodium-doped. 721... Substances § 721.10231 Rutile, tin zinc, sodium-doped. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as rutile, tin zinc, sodium-doped (PMN P-06-37...

Tinned Fruit Consumption and Mortality in Three Prospective Cohorts

PubMed Central

Aasheim, Erlend T.; Sharp, Stephen J.; Appleby, Paul N.; Shipley, Martin J.; Lentjes, Marleen A. H.; Khaw, Kay-Tee; Brunner, Eric; Key, Tim J.; Wareham, Nicholas J.

2015-01-01

Dietary recommendations to promote health include fresh, frozen and tinned fruit, but few studies have examined the health benefits of tinned fruit. We therefore studied the association between tinned fruit consumption and mortality. We followed up participants from three prospective cohorts in the United Kingdom: 22,421 participants from the European Prospective Investigation into Cancer and Nutrition (EPIC)-Norfolk cohort (1993–2012), 52,625 participants from the EPIC-Oxford cohort (1993–2012), and 7440 participants from the Whitehall II cohort (1991–2012), all reporting no history of heart attack, stroke, or cancer when entering these studies. We estimated the association between frequency of tinned fruit consumption and all cause mortality (primary outcome measure) using Cox regression models within each cohort, and pooled hazard ratios across cohorts using random-effects meta-analysis. Tinned fruit consumption was assessed with validated food frequency questionnaires including specific questions about tinned fruit. During 1,305,330 person years of follow-up, 8857 deaths occurred. After adjustment for lifestyle factors and risk markers the pooled hazard ratios (95% confidence interval) of all cause mortality compared with the reference group of tinned fruit consumption less often than one serving per month were: 1.05 (0.99, 1.12) for one to three servings per month, 1.10 (1.03, 1.18) for one serving per week, and 1.13 (1.04, 1.23) for two or more servings per week. Analysis of cause-specific mortality showed that tinned fruit consumption was associated with mortality from cardiovascular causes and from non-cardiovascular, non-cancer causes. In a pooled analysis of three prospective cohorts from the United Kingdom self-reported tinned fruit consumption in the 1990s was weakly but positively associated with mortality during long-term follow-up. These findings raise questions about the evidence underlying dietary recommendations to promote tinned fruit