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Sample records for napyivyizolyuyuchomu 6h sic

  1. Junction barrier Schottky diodes in 6H SiC

    NASA Astrophysics Data System (ADS)

    Zetterling, Carl-Mikael; Dahlquist, Fanny; Lundberg, Nils; Östling, Mikael; Rottner, Kurt; Ramberg, Lennart

    1998-09-01

    Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100 V with a leakage current density of 0.15 A cm -2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20 mΩ cm 2, resulting in forward voltage drops of 2.6 V at 100 A cm -2.

  2. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    NASA Technical Reports Server (NTRS)

    Steckl, A. J.; Roth, M. D.; Powell, J. A.; Larkin, D. J.

    1993-01-01

    The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

  3. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC

    NASA Technical Reports Server (NTRS)

    Clemen, L. L.; Devaty, R. P.; Macmillan, M. F.; Yoganathan, M.; Choyke, W. J.; Larkin, D. J.; Powell, J. A.; Edmond, J. A.; Kong, H. S.

    1993-01-01

    Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors.

  4. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    NASA Astrophysics Data System (ADS)

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; Terrani, Kurt; Specht, Eliot D.

    2016-04-01

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02-20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior. Moreover the 6H-SiC expanded isotropically. The magnitude of the swelling followed a ∼0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ∼7.8% volume expansion in SiC was observed prior to amorphization. Above ∼0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. The as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.

  5. N-VSi-related center in non-irradiated 6H SiC nanostructure

    NASA Astrophysics Data System (ADS)

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Kalabukhova, Ekaterina; Klyachkin, Leonid; Malyarenko, Anna; Savchenko, Dariya; Shanina, Bella

    2014-02-01

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the 14N nucleus allow us to attribute this triplet center to the N-VSi defect.

  6. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    DOE PAGESBeta

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; Terrani, Kurt A.; Specht, Eliot D.

    2016-01-16

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02–20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior.more » Moreover the 6H–SiC expanded isotropically. The magnitude of the swelling followed a ~0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ~7.8% volume expansion in SiC was observed prior to amorphization. Above ~0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. As a result, the as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.« less

  7. Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

    2004-01-01

    Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

  8. Homoepitaxy of 6H and 4H SiC on nonplanar substrates

    SciTech Connect

    Nordell, N.; Karlsson, S.; Konstantinov, A.O.

    1998-01-01

    Growth by vapor phase epitaxy around stripe mesas and in trenches formed by reactive ion etch on 6H and 4H SiC substrates has been investigated. The mesas were aligned with the low index {l_angle}11{bar 2}0{r_angle} and {l_angle}1{bar 1}00{r_angle} directions, as well as with the high index {l_angle}1,1+{radical}(3),{ovr 2+{radical}(3)},0{r_angle} directions, in order to reveal and study the growth habit. It was found that a low C:Si ratio gave a smooth growth and small differences in growth rate between lattice planes. A larger C:Si ratio gave more faceted growth, both limited by surface kinetics and surface diffusion, and the growth rate was 10{percent} lower in the [1{bar 1}00] direction and 10{percent} higher in the [11{bar 2}0] direction, than on the substrate. Growth on mesas oriented parallel to the substrate off-orientation shows clear step-flow growth, while growth on mesas oriented perpendicular to the off-orientation reveals the singular (0001) plane, where islands are observed, which might indicate Stranski{endash}Krastanov growth. {copyright} {ital 1998 American Institute of Physics.}

  9. The electron spin resonance study of heavily nitrogen doped 6H SiC crystals

    SciTech Connect

    Savchenko, D. V.

    2015-01-28

    The magnetic and electronic properties of heavily doped n-type 6H SiC samples with a nitrogen concentration of 10{sup 19} and 4 × 10{sup 19 }cm{sup −3} were studied with electron spin resonance (ESR) at 5–150 K. The observed ESR line with a Dysonian lineshape was attributed to the conduction electrons (CE). The CE ESR (CESR) line was fitted by Lorentzian (insulating phase) (T < 40 K) and by Dysonian lineshape (metallic phase) above 40 K, demonstrating that Mott insulator-metal (IM) transition takes place at ∼40 K, accompanied by significant change in the microwave conductivity. The temperature dependence of CESR linewidth follows the linear Korringa law below 40 K, caused by the coupling of the localized electrons (LE) and CE, and is described by the exponential law above 40 K related to the direct relaxation of the LE magnetic moments via excited levels driven by the exchange interaction of LE with CE. The g-factor of the CESR line (g{sub ‖} = 2.0047(3), g{sub ⊥} = 2.0034(3)) is governed by the coupling of the LE of nitrogen donors at hexagonal and quasi-cubic sites with the CE. The sharp drop in CESR line intensity (25–30 K) was explained by the formation of antiferromagnetic ordering in the spin system close to the IM transition. The second broad ESR line overlapped with CESR signal (5–25 K) was attributed to the exchange line caused by the hopping motion of electrons between occupied and non-occupied positions of the nitrogen donors. Two mechanisms of conduction, hopping and band conduction, were distinguished in the range of T = 10–25 K and T > 50 K, respectively.

  10. Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6 H -SiC (0001 )

    NASA Astrophysics Data System (ADS)

    Sforzini, J.; Nemec, L.; Denig, T.; Stadtmüller, B.; Lee, T.-L.; Kumpf, C.; Soubatch, S.; Starke, U.; Rinke, P.; Blum, V.; Bocquet, F. C.; Tautz, F. S.

    2015-03-01

    We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6 H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (6 √{3 }×6 √{3 } )-R 30 ° unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6 H -SiC (0001 ) approaches ideal graphene.

  11. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  12. Rb and Cs deposition on epitaxial graphene grown on 6H -SiC(0001)

    NASA Astrophysics Data System (ADS)

    Watcharinyanon, S.; Virojanadara, C.; Johansson, L. I.

    2011-11-01

    Epitaxial graphene grown on the silicon-terminated SiC(0001) is doped by alkali metals deposited on the surface. The synchrotron radiation based photoelectron spectroscopy results presented reveal that Rb and Cs deposited on monolayer graphene samples, grown on the silicon-terminated SiC(0001), gives rise to n-type doping, i.e. electron transfer from the metal to the graphene layer. The Dirac point of the single π-cone is found to shift downwards away from the Fermi level by ca. 1.0 eV after alkali metal depositions. The adsorbed Rb and Cs atoms do initially disrupt the bonds in the graphene layer but after heating the bonds appear to be recreated when the alkali metal coverage start to decrease due to thermal desorption. None of these two alkali metals do intercalate into the graphene and buffer layer after depositing at room temperature or after heating. This is contrary to the case of Li where intercalation occurred directly after deposition.

  13. Nuclear Reaction Analysis of Helium Retention in 6H SiC as a function of irradiation and annealing

    NASA Astrophysics Data System (ADS)

    Bissell, L. J.; Smith, R. J.; Shutthanadan, V.; Adams, E. M.; Thevuthasan, S.; Jiang, W.; Weber, W. J.; Zhang, Y.

    2002-10-01

    Silicon carbide has been proposed as a coating material in nuclear fuel, and silicon carbide composites have been proposed as cladding material in advanced gas-cooled and light water reactors. As such, the effects of irradiation and fission gases on the performance of SiC in the reactor environment are critical in several ways. Since He serves as a fission gas, low-energy He (< 50 keV) will be colliding with coolant gas and outer surface cladding layers. As such, it is important to understand He retention in SiC under advanced reactor operating conditions. We investigated He retention in single crystal 6H SiC as a function of irradiation dose and annealing temperature using nuclear reaction analysis (NRA) via the 3He(D,alpha)1H reaction. Helium ions with 40 keV energy were implanted in the SiC to a depth of ˜360 nm at room temperature under high vacuum conditions. The samples were then transferred to another high vacuum chamber where the NRA was performed using a 1.0 MeV D+ beam. Helium retention was studied as a function of D+ irradiation dose from 5 x 10^(16) to 4 x 10^(18) D+ /cm2, and as a function of annealing temperature ranging from 300 1600 K. No significant helium loss was observed under this dosage range, and only annealing temperatures above 1400 K caused measurable loss of helium. These results will be discussed along with the details associated with the 3He(D,alpha)1H nuclear reaction.

  14. Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

    NASA Technical Reports Server (NTRS)

    Hubbard, S. M.; Tabib-Azar, M.; Balley, S.; Rybickid, G.; Neudeck, P.; Raffaelle, R.

    2004-01-01

    Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

  15. Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    1997-01-01

    We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

  16. Electronic Transitions of Jet-cooled SiC2, Si2Cn (n=1-3), Si3Cn (n = 1,2), and SiC6H4 between 250 and 710 nm

    NASA Astrophysics Data System (ADS)

    Steglich, M.; Maier, J. P.

    2015-03-01

    Electronic transitions of the title molecules were measured between 250 and 710 nm using a mass-resolved 1 + 1’ resonant two-photon ionization technique at a resolution of 0.1 nm. Calculations at the B3LYP/aug-cc-pVQZ level of theory support the analyses. Because of their spectral properties, SiC2, linear Si2C2, Si3C, and SiC6H4 are interesting target species for astronomical searches in the visible spectral region. Of special relevance is the Si-C2-Si chain, which features a prominent band at 516.4 nm of a strong transition (f = 0.25). This band and one from SiC6H4 at 445.3 nm were also investigated at higher resolution (0.002 nm).

  17. Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC

    SciTech Connect

    Szász, K.; Gali, A.

    2014-02-21

    Motivated by recent experimental findings on the hyperfine signal of nitrogen donor (N{sub C}) in 4 H and 6 H SiC, we calculate the hyperfine tensors within the framework of density functional theory. We find that there is negligible hyperfine coupling with {sup 29}Si isotopes when N{sub C} resides at h site both in 4 H and 6 H SiC. We observe measurable hyperfine coupling to a single {sup 29}Si at k site in 4 H SiC and k{sub 1} site in 6 H SiC. Our calculations unravel that such {sup 29}Si hyperfine coupling does not occur at k{sub 2} site in 6 H SiC. Our findings are well corroborated by our new electron paramagnetic resonance studies in nitrogen doped 6 H SiC.

  18. Three-dimensional electron-positron momentum distribution of O3+-irradiated 6H SiC using two positron spectroscopy techniques simultaneously

    NASA Astrophysics Data System (ADS)

    Williams, Christopher; Burggraf, Larry; Adamson, Paul; Petrosky, James

    2011-01-01

    A three-dimensional (3D) positron annihilation spectroscopy system (3DPASS) capable of determining 3D electron-positron (e--e+) momentum densities from measurements of deviations from co-linearity and energies of photons from e--e+ annihilation events was employed to examine the effects of O-atom defects in 6H SiC. Three-dimensional momentum datasets were determined for 6H SiC irradiated with 24 MeV O3+ ions. Angular correlation of annihilation radiation (ACAR) and coincidence Doppler-broadening of annihilation radiation (CDBAR) analyses are presented. In addition, a novel technique is illustrated for analyzing 3D momentum datasets in which the parallel momentum component, p|| (obtained from the CDBAR measurement) is selected for annihilation events that possess a particular perpendicular momentum component, p- observed in the 2D ACAR spectrum.

  19. The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method

    NASA Astrophysics Data System (ADS)

    Savchenko, D.; Shanina, B.; Kalabukhova, E.; Pöppl, A.; Lančok, J.; Mokhov, E.

    2016-04-01

    We present the detailed study of the spin kinetics of the nitrogen (N) donor electrons in 6H SiC wafers grown by the Lely method and by the sublimation "sandwich method" (SSM) with a donor concentration of about 1017 cm-3 at T = 10-40 K. The donor electrons of the N donors substituting quasi-cubic "k1" and "k2" sites (Nk1,k2) in both types of the samples revealed the similar temperature dependence of the spin-lattice relaxation rate (T1-1), which was described by the direct one-phonon and two-phonon processes induced by the acoustic phonons proportional to T and to T9, respectively. The character of the temperature dependence of the T1-1 for the donor electrons of N substituting hexagonal ("h") site (Nh) in both types of 6H SiC samples indicates that the donor electrons relax through the fast-relaxing centers by means of the cross-relaxation process. The observed enhancement of the phase memory relaxation rate (Tm-1) with the temperature increase for the Nh donors in both types of the samples, as well as for the Nk1,k2 donors in Lely grown 6H SiC, was explained by the growth of the free electron concentration with the temperature increase and their exchange scattering at the N donor centers. The observed significant shortening of the phase memory relaxation time Tm for the Nk1,k2 donors in the SSM grown sample with the temperature lowering is caused by hopping motion of the electrons between the occupied and unoccupied states of the N donors at Nh and Nk1,k2 sites. The impact of the N donor pairs, triads, distant donor pairs formed in n-type 6H SiC wafers on the spin relaxation times was discussed.

  20. Growth of Defect-Free 3C-Sic on 4H- and 6H-SIC Mesas Using Step-Free Surface Heteroepitaxy

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony; Trunek, Andrew J.; Huang, Xianrong R.; Dudley, Michael

    2002-01-01

    A new growth process, herein named step-free surface heteroepitaxy, has achieved 3C-SiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (Delta/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

  1. Calculation of positron annihilation characteristics of six main defects in 6 H -SiC and the possibility to distinguish them experimentally

    NASA Astrophysics Data System (ADS)

    Linez, F.; Makkonen, I.; Tuomisto, F.

    2016-07-01

    We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of 6 H -SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us to point out which positron technique in the most adapted to identify a particular defect. They show that the coincidence Doppler broadening technique is the most relevant for observing the silicon vacancy-nitrogen complexes, VSiNC , and carbon vacancy-carbon antisite ones, VCCSi . For the other studied defects, the calculated positron characteristics are found to be too close for the defects to be easily distinguished using a single positron annihilation technique. Then it is required to use complementary techniques, positron annihilation based or other.

  2. Oxidation-Induced Deep Levels in n - and p -Type 4 H - and 6 H -SiC and Their Influence on Carrier Lifetime

    NASA Astrophysics Data System (ADS)

    Booker, I. D.; Abdalla, H.; Hassan, J.; Karhu, R.; Lilja, L.; Janzén, E.; Sveinbjörnsson, E. Ö.

    2016-07-01

    We present a complete analysis of the electron- and hole-capture and -emission processes of the deep levels ON1, ON2a, and ON2b in 4 H -SiC and their 6 H -SiC counterparts OS1a and OS1b through OS3a and OS3b, which are produced by lifetime enhancement oxidation or implantation and annealing techniques. The modeling is based on a simultaneous numerical fitting of multiple high-resolution capacitance deep-level transient spectroscopy spectra measured with different filling-pulse lengths in n - and p -type material. All defects are found to be double-donor-type positive-U two-level defects with very small hole-capture cross sections, making them recombination centers of low efficiency, in accordance with minority-carrier-lifetime measurements. Their behavior as trapping and weak recombination centers, their large concentrations resulting from the lifetime enhancement oxidations, and their high thermal stability, however, make it advisable to minimize their presence in active regions of devices, for example, the base layer of bipolar junction transistors.

  3. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

    SciTech Connect

    Huang, Zheng; Lü, Tie-Yu; Wang, Hui-Qiong; Zheng, Jin-Cheng

    2015-09-15

    We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

  4. Formation of SiC - like layers on Si surface in contact with C6H5CH3 solution by UV laser irradiation

    NASA Astrophysics Data System (ADS)

    Yusupov, M.; Fedorenko, L.; Lytvyn, O.; Yukhimchuk, V.

    2008-09-01

    The review of results of submicron surface layers formation is presented under ultraviolet (UV) N2 - laser (λ = 0.337 μm, tp = 5 ns) ablation of silicon target in liquid environment C6H5CH3. The morphological and deformation state of a near-surface Si layer was investigated by polarization modulation spectroscopy (PMS), atom force microscopy (AFM) and Raman spectra methods before and after irradiation. After irradiation AFM data shows the formation of submicron structures with hexagonal-like type of regularity on Si surface, PMS spectra indicates the increasing of refractive index, Raman spectroscopy reveals the broad band in the range 740-800 cm-1. All that facts allow us to assume the possibility of SiC-like layer formation on silicon monocrystal surface by laser stimulated diffusion of carbon atoms from liquid media. The surface morphology and composition of the irradiated surface varies considerable with the number of laser shots.

  5. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    SciTech Connect

    Sullivan, J S; Stanley, J R

    2007-02-13

    Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

  6. Nitrogen-induced structures in epitaxial graphene on 6H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Sun, Guofeng; Rhim, Sung-Hyon; Qi, Yun; Weinert, Michael; Li, Lian

    2009-03-01

    Nitrogen-induced structures on epitaxial graphene grown on 6H- SiC(0001) are studied by scanning tunneling microscopy (STM) and first-principles calculations. Several defect structures produced by nitrogen incorporation are observed by STM. Calculations of the energetics of nitrogen substitution at various sites neighboring a carbon vacancy indicate that nitrogen prefers to be at the site nearest to the vacancy, consistent with the STM observations.

  7. A new doping method using metalorganics in chemical vapor deposition of 6H-SiC

    NASA Astrophysics Data System (ADS)

    Yoshida, S.; Sakuma, E.; Misawa, S.; Gonda, S.

    1984-01-01

    Aluminum doping was performed using triethylaluminum as the dopant in chemical vapor deposition of 6H-silicon carbide (SiC). Measurements on the electrical and cathodoluminescent properties of the epilayers indicate that the doping concentration of aluminum can be easily controlled by the flow rate of metalorganics. Electroluminescence was also observed for the pn junctions prepared by the successive growth of a nondoped n layer and a p layer doped with aluminum using metalorganics.

  8. Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

    NASA Astrophysics Data System (ADS)

    Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

    2015-12-01

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  9. Synergistic Effects of Iodine and Silver Ions Co-Implanted in 6H-SiC

    SciTech Connect

    Kuhudzai, Remeredzai J.; Malherbe, Johan; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, Arun; Zhu, Zihua; Nandasiri, Manjula I.

    2015-10-23

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behavior has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 ºC for 30 hours in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  10. High-voltage 6H-SiC p-n junction diodes

    NASA Technical Reports Server (NTRS)

    Matus, L. G.; Powell, J. A.; Salupo, C. S.

    1991-01-01

    A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

  11. Lattice-matching of Si grown on 6H-SiC(000-1) C-face

    NASA Astrophysics Data System (ADS)

    Li, L. B.; Chen, Z. M.; Xie, L. F.; Yang, C.

    2014-01-01

    Si films with <111> preferred orientation have been prepared on 6H-SiC(000-1) C-face. HRTEM and SAED results indicate that the Si film has epitaxial connection with the 6H-SiC substrate and the parallel-plane relationship of the Si/6H-SiC heterostructure is (111)Si//(000-1)6H-SiC. Using fast Fourier transform and Fourier mask filtering technique, misfit dislocations are clearly observed at the Si/6H-SiC interface, which accommodate the most of lattice mismatch strain. Every four Si (111) lattice planes are registered with five 6H-SiC(000-1) lattice planes along the interface. Based on the 4:5 lattice matching mode, the lattice structure of the Si/6H-SiC interface and its stability were energetically investigated by molecular dynamics simulations. When the Si films grow preferentially along <111> orientation on 6H-SiC(000-1) C-face, the misfit strain in Si layer significantly reduces due to the relaxation of C atoms in SiC layer near the Si/6H-SiC interface, and thus the Si/6H-SiC heterostructure has a stable interface with a small interface formation energy of -14.24 eV.

  12. VIBRATIONALLY EXCITED C{sub 6}H

    SciTech Connect

    Gottlieb, C. A.; McCarthy, M. C.; Thaddeus, P.

    2010-08-15

    Rotational spectra of the linear carbon chain radical C{sub 6}H in two low-lying excited vibrational states were observed both at millimeter wavelengths in a low-pressure glow discharge and at centimeter wavelengths in a supersonic molecular beam. Two series of harmonically related lines with rotational constants within 0.3% of the {sup 2{Pi}} ground state were assigned to the {sup 2{Sigma}} and {sup 2{Delta}} vibronic components of an excited bending vibrational level. Measurements of the intensities of the lines in the glow discharge indicate that the {sup 2{Sigma}} component lies very close to ground, but the {sup 2{Delta}} component is much higher in energy. The standard Hamiltonian for an isolated {sup 2{Delta}} state with five spectroscopic constants reproduces the observed rotational spectrum, but several high-order distortion terms in the spin-rotation interaction are needed to reproduce the spectrum of the {sup 2{Sigma}} component in C{sub 6}H and C{sub 6}D. The derived spectroscopic constants allow astronomers to calculate the rotational spectra of the {sup 2{Sigma}} and {sup 2{Delta}} states up to 260 GHz to within 0.1 km s{sup -1} or better in equivalent radial velocity.

  13. Surface topography in mechanical polishing of 6H-SiC (0001) substrate

    NASA Astrophysics Data System (ADS)

    Yin, Ling; Huang, Han

    2007-12-01

    Silicon carbide (SiC) single crystals have been used as the substrates of a new generation of wide band-gap semiconductors due to their unparalleled combination of high breakdown voltage, extreme temperature tolerance, mobility and radiation hardness. For their applications, the SiC substrates need to be machined with nanometric surface quality as well as high form accuracy. However, the superior properties of the materials render their machinability extremely difficult. In this paper, we report the form error and surface roughness of the 6H-SiC (0001) substrate mechanically polished using 3 μm diamond powders in two different polishing processes. One process was concentrated-load polishing; the other was surface polishing. The polished surfaces were evaluated using white light interferometry and atomic force microscopy (AFM) for assessment of two- and three-dimensional topographies including form error and surface roughness. We found that a large form error was produced on the 6H-SiC (0001) substrate in the concentrated-load polishing. The root-mean-square (RMS) surface roughness of approximately 4 nm was resulted. Surface polishing of the 6H-SiC (0001) substrate remarkably improved form accuracy. The RMS surface roughness of approximately 2.5 nm was obtained.

  14. Oxygen Adsorption on the 6H-SiC(0001) (3x3) Surface

    NASA Astrophysics Data System (ADS)

    Cui, Y.; Li, L.

    2001-03-01

    Silicon carbide (SiC) is an attractive semiconductor for applications requiring a wide bandgap, high temperature/high power and chemical inertness. An investigation of the initial stages of oxidation of SiC, therefore, is important for optimizing the growth of thin, insulating oxide layers in SiC devices. In the present work, scanning tunneling microscopy (STM) has been used to study the initial stages of oxygen adsorption at room temperature on the Si-rich (3x3) surface of 6H-SiC(0001). The (3x3) surface is prepared by a two-step method of etching in hydrogen atmosphere at 1500 ^oC and annealing under Si beam in UHV at 950 ^oC. Upon adsorption of oxygen on the (3x3) surface, only one reaction product has been identified in the STM topographs, which appears as bright sites in the empty-state mode. These bright sites are attributed to the oxygen atoms inserted in one of the Si adatom's back bonds. These results and their implications for oxide growth on SiC will be presented at the meeting.

  15. Three-dimensional positron annihilation momentum measurement technique applied to measure oxygen-atom defects in 6H silicon carbide

    NASA Astrophysics Data System (ADS)

    Williams, Christopher S.

    A three-dimensional Positron Annihilation Spectroscopy System (3DPASS) capable to simultaneously measure three-dimensional electron-positron (e--e+) momentum densities measuring photons derived from e--e+ annihilation events was designed and characterized. 3DPASS simultaneously collects a single data set of correlated energies and positions for two coincident annihilation photons using solid-state double-sided strip detectors (DSSD). Positions of photons were determined using an interpolation method which measures a figure-of-merit proportional to the areas of transient charges induced on both charge collection strips directly adjacent to the charge collection strips interacting with the annihilation photons. The subpixel resolution was measured for both double-sided strip detectors (DSSD) and quantified using a new method modeled after a Gaussian point-spread function with a circular aperture. Error associated with location interpolation within an intrinsic pixel in each of the DSSDs, the subpixel resolution, was on the order of +/- 0.20 mm (this represents one-standard deviation). The subpixel resolution achieved was less than one twenty-fifth of the 25-mm2 square area of an intrinsic pixel created by the intersection of the DSSDs' orthogonal charge collection strips. The 2D ACAR and CDBAR response for single-crystal copper and 6H silicon carbide (6H SiC) was compared with results in the literature. Two additional samples of 6H SiC were irradiated with 24 MeV O+ ions, one annealed and one un-annealed, and measured using 3DPASS. Three-dimensional momentum distributions with correlated energies and coincident annihilation photons' positions were presented for all three 6H SiC samples. 3DPASS was used for the first experimental measurement of the structure of oxygen defects in bulk 6H SiC.

  16. Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures

    NASA Astrophysics Data System (ADS)

    Hlatshwayo, T. T.; van der Berg, N. G.; Msimanga, M.; Malherbe, J. B.; Kuhudzai, R. J.

    2014-09-01

    The effect of high temperature thermal annealing on the retainment and diffusion behaviour of iodine (I) and silver (Ag) both individually and co-implanted into 6H-SiC has been investigated using RBS, RBS-C and heavy ion ERDA (Elastic Recoil Detection Analysis). Iodine and silver ions at 360 keV were both individually and co-implanted into 6H-SiC at room temperature to fluences of the order of 1 × 1016 cm-2. RBS analyses of the as-implanted samples indicated that implantation of Ag and of I and co-implantation of 131I and 109Ag at room temperature resulted in complete amorphization of 6H-SiC from the surface to a depth of about 290 nm for the co-implanted samples. Annealing at 1500 °C for 30 h (also with samples annealed at 1700 °C for 5 h) caused diffusion accompanied by some loss of both species at the surface with some iodine remaining in the iodine implanted samples. In the Ag implanted samples, the RBS spectra showed that all the Ag disappeared. SEM images showed different recrystallization behaviour for all three sets of samples, with larger faceted crystals appearing in the SiC samples containing iodine. Heavy Ion ERDA analyses showed that both 109Ag and 131I remained in the co-implanted SiC samples after annealing at 1500 °C for 30 h. Therefore, iodine assisted in the retainment of silver in SiC even at high temperature.

  17. Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony; Trunek, Andrew J.; Spry, David J.

    2003-01-01

    Most SiC devices are implemented in homoepitaxial films grown on 4H/6H-SiC wafers with surfaces 3 degrees to 8 degrees off-axis from the (0001) basal plane. This approach has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This presentation describes recent advances in SiC epitaxial growth that begun to overcome the above shortcomings for arrays of mesas patterned into on-axis 4H/6H-SiC wafers. First, we demonstrated that atomic-scale surface steps can be completely eliminated from 4H/6H-SiC mesas via on-axis homoepitaxial step-flow growth, forming (0001) basal plane surfaces (up to 0.4 mm x 0.4 mm) for larger than previously thought possible. Step-free surface areas were then extended by growth fo thin lateral cantilevers from the mesa tops. These lateral cantilevers enabled substrate defects to be reduced and relocated in homoepitaxial films in a manner not possible with off-axis SiC growth. Finally, growth of vastly improved 3C-SiC heterofilms was achieved on 4H/6H-SiC mesas using the recently develop step-free surface heteroepitaxy process. These epitaxial growth developments should enable improved homojunction and heterojunction silicon carbide prototype devices.

  18. Imaging of SiC in metal matrix composites

    SciTech Connect

    Radmilovic, V.; O`Keefe, M.A.; Thomas, G.

    1992-08-01

    TEM has advantages over XRD in determining lattice periodicity. This paper reports an attempt in matching a simulation to an experimental image of SiC in an Al-8.5wt%Fe-1.3 wt%V-1.7 wt%Si composite containing 15 wt% SiC particulates, processed by powder metallurgy. The hexagonal allotrope has predominantly the 6H polytype structure; 1/3 of the 15R polytype is also observed. This SiC structure represents the 87R polytype. 6 refs, 2 figs.

  19. Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Powell, J. A.; Spry, David J.; Raghothamachar, Balaji; Dudley, Michael

    2011-01-01

    Lateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

  20. Suppression of Photoanodic Surface Oxidation of n-Type 6H-SiC Electrodes in Aqueous Electrolytes.

    PubMed

    Sachsenhauser, Matthias; Walczak, Karl; Hampel, Paul A; Stutzmann, Martin; Sharp, Ian D; Garrido, Jose A

    2016-02-16

    The photoelectrochemical characterization of silicon carbide (SiC) electrodes is important for enabling a wide range of potential applications for this semiconductor. However, photocorrosion of the SiC surface remains a key challenge, because this process considerably hinders the deployment of this material into functional devices. In this report, we use cyclic voltammetry to investigate the stability of n-type 6H-SiC photoelectrodes in buffered aqueous electrolytes. For measurements in pure Tris buffer, photogenerated holes accumulate at the interface under anodic polarization, resulting in the formation of a porous surface oxide layer. Two possibilities are presented to significantly enhance the stability of the SiC photoelectrodes. In the first approach, redox molecules are added to the buffer solution to kinetically facilitate hole transfer to these molecules, and in the second approach, water oxidation in the electrolyte is induced by depositing a cobalt phosphate catalyst onto the semiconductor surface. Both methods are found to effectively suppress photocorrosion of the SiC electrodes, as confirmed by atomic force microscopy and X-ray photoelectron spectroscopy measurements. The presented study provides straightforward routes to stabilize n-type SiC photoelectrodes in aqueous electrolytes, which is essential for a possible utilization of this material in the fields of photocatalysis and multimodal biosensing. PMID:26795116

  1. Thermal expansion and elastic anisotropies of SiC as related to polytype structure

    NASA Technical Reports Server (NTRS)

    Li, Z.; Bradt, R. C.

    1989-01-01

    The concept of the fraction of hexagonal stacking is used to describe the anisotropic thermal expansion coefficients of polytypes of SiC. The single crystal elastic anisotropy for the SiC polytype structures and the temperature dependencies of the anisotropies are examined. The anisotropic thermoelastic stress index for the 3C and 6H SiC polytypes are illustrated graphically. It is shown that this index is useful for predicting the most desirable crystal growth orientations for SiC whisker incorporation into composite matrices.

  2. Structural variants in attempted hetero-epitaxial growth of B12As2 on 6H-SiC (0001).

    SciTech Connect

    Aselage, Terrence Lee; Michael, Joseph Richard; Emin, David Jacob; Kotula, Paul Gabriel

    2005-03-01

    Boron sub-arsenide, B{sub 12}As{sub 2}, is based on twelve-atom clusters of boron atoms and two-atom As-As chains. By contrast, SiC is a tetrahedrally bonded covalent semiconductor. Despite these fundamental differences, the basal plane hexagonal lattice constant of boron sub-arsenide is twice that of SiC. This coincidence suggests the possibility of heteroepitaxial growth of boron sub-arsenide films on properly aligned SiC. However, there are a variety of incommensurate alignments by which heteroepitaxial growth of B{sub 12}As{sub 2} on (0001) 6H-SiC can occur. In this study, we first used geometrical crystallographic considerations to describe the possible arrangements of B{sub 12}As{sub 2} on (0001) 6H-SiC. We identified four translational and two rotational variants. We then analyzed electron backscattered diffraction and transmission electron microscopy images for evidence of distinct domains of such structural variants. Micron-scale regions with each of the two possible rotational alignments of B{sub 12}As{sub 2} icosahedra with the SiC surface were seen. On a finer length scale (100-300 nm) within these regions, boron-rich boundaries were found, consistent with those between pairs of the four equivalent translational variants associated with a two-to-one lattice match. Boron-carbide reaction layers were also observed at interfaces between SiC and B{sub 12}As{sub 2}.

  3. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    SciTech Connect

    Wu, Yan; Ji, Lingfei Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-27

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (∼440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  4. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    NASA Astrophysics Data System (ADS)

    Wu, Yan; Ji, Lingfei; Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-01

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (˜440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  5. Interfacial reactions and surface analysis of W thin film on 6H-SiC

    NASA Astrophysics Data System (ADS)

    Thabethe, T. T.; Hlatshwayo, T. T.; Njoroge, E. G.; Nyawo, T. G.; Ntsoane, T. P.; Malherbe, J. B.

    2016-03-01

    Tungsten (W) thin film was deposited on bulk single crystalline 6H-SiC substrate and annealed in vacuum at temperatures ranging from 700 to 1000 °C for 1 h. The resulting solid-state reactions, phase composition and surface morphology were investigated by Rutherford backscattering spectroscopy (RBS), grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM). XRD was used to identify the phases present and to confirm the RBS results. The RBS spectra were simulated using the RUMP software in order to obtain the deposited layer thickness, composition of reaction zone and detect phase formation at the interface. RBS results showed that interaction between W and SiC started at 850 °C. The XRD analysis showed that WC and CW3 were the initial phases formed at 700 and 800 °C. The concentration of the phases was however, too low to be detected by RBS analysis. At temperatures of 900 and 1000 °C, W reacted with the SiC substrate and formed a mixed layer containing a silicide phase (WSi2) and a carbide phase (W2C). The SEM images of the as-deposited samples showed that the W thin film had a uniform surface with small grains. The W layer became heterogeneous during annealing at higher temperatures as the W granules agglomerated into island clusters at temperatures of 800 °C and higher.

  6. Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

    SciTech Connect

    Yoshida, Kyohei; Hachiya, Kan; Okumura, Kensuke; Mishima, Kenta; Inukai, Motoharu; Torgasin, Konstantin; Omer, Mohamed; Sonobe, Taro; Zen, Heishun; Negm, Hani; Kii, Toshiteru; Masuda, Kai; Ohgaki, Hideaki

    2013-10-28

    Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 μm). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode.

  7. -SiC Composites

    NASA Astrophysics Data System (ADS)

    Chakraborty, Shirshendu; Debnath, Debashish; Mallick, Azizur Rahaman; Das, Probal Kumar

    2014-12-01

    ZrB2-SiC composites were hot pressed at 2473 K (2200 °C) with graded amounts (5 to 20 wt pct) of SiC and the effect of the SiC addition on mechanical properties like hardness, fracture toughness, scratch and wear resistances, and thermal conductivity were studied. Addition of submicron-sized SiC particles in ZrB2 matrices enhanced mechanical properties like hardness (15.6 to 19.1 GPa at 1 kgf), fracture toughness (2 to 3.6 MPa(m)1/2) by second phase dispersion toughening mechanism, and also improved scratch and wear resistances. Thermal conductivity of ZrB2-SiC (5 wt pct) composite was higher [121 to 93 W/m K from 373 K to 1273 K (100 °C to 1000 °C)] and decreased slowly upto 1273 K (1000 °C) in comparison to monolithic ZrB2 providing better resistance to thermal fluctuation of the composite and improved service life in UHTC applications. At higher loading of SiC (15 wt pct and above), increased thermal barrier at the grain boundaries probably reduced the thermal conductivity of the composite.

  8. Magnetic, optical and electrical characterization of SiC doped with scandium during the PVT growth

    NASA Astrophysics Data System (ADS)

    Racka, K.; Avdonin, A.; Sochacki, M.; Tymicki, E.; Grasza, K.; Jakieła, R.; Surma, B.; Dobrowolski, W.

    2015-03-01

    Scandium is introduced into bulk SiC during the physical vapor transport (PVT) growth. SiC crystals grown with different Sc contents (from 0.5 wt% up to 2.5 wt%, added to the SiC source material) are studied. Magnetic properties of SiC doped with scandium during the PVT growth are reported for the first time. The presence of antiferromagnetic interactions between magnetic moments of Sc ions is concluded from the temperature dependence of magnetic susceptibility. Detailed PL spectra of 4H-/6H-SiC:B and 4H-/6H-SiC:Sc crystals are presented. A new energy level of 35-37 meV is found on SiC:Sc samples and its possible assignment to a complex defect, consisting of nitrogen donor and scandium acceptor, is proposed.

  9. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

    SciTech Connect

    Li, Q.; Polyakov, A.Y.; Skowronski, M.; Sanchez, E.K.; Loboda, M.J.; Fanton, M.A.; Bogart, T.; Gamble, R.D.

    2005-06-01

    Chemical elemental analysis, temperature-dependent Hall measurements, deep-level transient spectroscopy, and contactless resistivity mapping were performed on undoped semi-insulating (SI) and lightly nitrogen-doped conducting 6H-SiC crystals grown by physical vapor transport (PVT). Resistivity maps of commercial semi-insulating SiC wafers revealed resistivity variations across the wafers between one and two orders of magnitude. Two major types of variations were identified. First is the U-shape distribution with low resistivity in the center and high in the periphery of the wafer. The second type had an inverted U-shape distribution. Secondary-ion-mass spectrometry measurements of the distribution of nitrogen concentration along the growth axis and across the wafers sliced from different locations of lightly nitrogen-doped 6H-SiC boules were conducted. The measured nitrogen concentration gradually decreased along the growth direction and from the center to the periphery of the wafers. This change gives rise to the U-like distribution of resistivity in wafers of undoped SI-SiC. The concentrations of deep electron traps exhibited similar dependence. Compensation of nitrogen donors by these traps can result in the inverted U-like distribution of resistivity. Possible reasons for the observed nonuniformities include formation of a (0001) facet in PVT growth coupled with orientation-dependent nitrogen incorporation, systematic changes of the gas phase composition, and increase of the deposition temperature during boule growth.

  10. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  11. Nucleation and growth of polycrystalline SiC

    NASA Astrophysics Data System (ADS)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.; Linnarsson, M. K.; Ou, H.; Syväjärvi, M.; Wellmann, P.

    2014-03-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

  12. Thermal expansion and thermal expansion anisotropy of SiC polytypes

    NASA Technical Reports Server (NTRS)

    Li, Z.; Bradt, R. C.

    1987-01-01

    The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.

  13. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Chen, Guomei; Ni, Zifeng; Xu, Laijun; Li, Qingzhong; Zhao, Yongwu

    2015-12-01

    Colloidal silica and ceria based slurries, both using KMnO4 as an oxidizer, for chemical mechanical polishing (CMP) of Si-face (0 0 0 1) 6H-SiC substrate, were investigated to obtain higher material removal rate (MRR) and ultra-smooth surface. The results indicate that there was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries. For the ceria based slurries, a higher MRR was obtained, especially in strong acid KMnO4 environment, and the maximum MRR (1089 nm/h) and a smoother surface with an average roughness Ra of 0.11 nm was achieved using slurries containing 2 wt% colloidal ceria, 0.05 M KMnO4 at pH 2. In contrast, due to the attraction between negative charged silica particles and positive charged SiC surface below pH 5, the maximum MRR of silica based slurry was only 185 nm/h with surface roughness Ra of 0.254 nm using slurries containing 6 wt% colloidal silica, 0.05 M KMnO4 at pH 6. The polishing mechanism was discussed based on the zeta potential measurements of the abrasives and the X-ray photoelectron spectroscopy (XPS) analysis of the polished SiC surfaces.

  14. SiC devices: Physics and numerical simulation

    NASA Astrophysics Data System (ADS)

    Ruff, Martin; Mitlehner, Heinz; Helbig, Reinhard

    1994-06-01

    The important material parameters for 6H silicon carbide (6H-SiC) are extracted from the literature and implemented into the 2-D device simulation programs PISCES and BREAKDOWN and into the 1-D program OSSI Simulations of 6H-SiC p-n junctions show the possibility to operate corresponding devices at temperatures up to 1000 K thanks to their low reverse current densities. Comparison of a 6H-SiC 1200 V p-n(-)-n(+) diode with a corresponding silicon (Si) diode shows the higher switching performance of the 6H-SiC diode, while the forward power loss is somewhat higher than in Si due to the higher built-in voltage of the 6H-SiC p-n junction. This disadvantage can be avoided by a 6H-SiC Schottky diode. The on-resistances of Si, 3C-SiC, and 6H-SiC vertical power MOSFET's are compared by analytical calculations. At room temperature, such SiC MOSFET's can operate up to blocking capabilities of 5000 V with an on-resistance below 0.1 (Omega) sq cm, while Si MOSFET's are limited to below 500 V. This is checked by calculating the characteristics of a 6H-SiC 1200 V MOSFET with PISCES. In the voltage region below 200 V, Si is superior due to its higher mobility and lower threshold voltage. Electric fields in the order of 4 x 10(exp 6) V/cm occur in the gate oxide of the mentioned 6H-SiC MOSFET as well as in a field plate oxide used to passivate its planar junction. To investigate the high frequency performance of SiC devices, a heterobipolartransistor with a 6H-SiC emitter is considered. Base and collector are assumed to be out of 3C-SiC. Frequencies up to 10 GHz with a very high output power are obtained on the basis of analytical considerations.

  15. The effect of split sleep schedules (6h-on/6h-off) on neurobehavioural performance, sleep and sleepiness.

    PubMed

    Short, Michelle A; Centofanti, Stephanie; Hilditch, Cassie; Banks, Siobhan; Lushington, Kurt; Dorrian, Jillian

    2016-05-01

    Shorter, more frequent rosters, such as 6h-on/6h-off split shifts, may offer promise to sleep, subjective sleepiness and performance by limiting shift length and by offering opportunities for all workers to obtain some sleep across the biological night. However, there exists a paucity of studies that have examined these shifts using objective measures of sleep and performance. The present study examined neurobehavioural performance, sleepiness and sleep during 6h-on/6h-off split sleep schedules. Sixteen healthy adults (6 males, 26.13y ± 4.46) participated in a 9-day laboratory study that included two baseline nights (BL, 10h time in bed (TIB), 2200h-0800h), 4 days on one of two types of 6h-on/6h-off split sleep schedules with 5h TIB during each 'off' period (6h early: TIB 0300h-0800h and 1500h-20000h, or 6-h late: TIB 0900h-1400h and 2100h-0200h), and two recovery nights (10h TIB per night, 2200h-0800h). Participants received 10h TIB per 24h in total across both shift schedules. A neurobehavioural test bout was completed every 2 h during wake, which included the Psychomotor Vigilance Task (PVT) and the Karolinska Sleepiness Scale (KSS). Linear mixed effects models were used to assess the effect of day (BL, shift days 1-4), schedule (6h early, 6h late) and trial (numbers 1-6) on PVT lapses (operationalised as the number of reaction times >500 ms), PVT total lapse time, PVT fastest 10% of reaction times and KSS. Analyses were also conducted examining the effect of day and schedule on sleep variables. Overall, PVT lapses and total lapse time did not differ significantly between baseline and shift days, however, peak response speeds were significantly slower on the first shift day when compared to baseline, but only for those in the 6h-late condition. Circadian variations were apparent in performance outcomes, with individuals in the 6h-late condition demonstrated significantly more and longer lapses and slower peak reaction times at the end of their night shift

  16. SEM analysis of ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Malherbe, Johan B.; van der Berg, N. G.; Botha, A. J.; Friedland, E.; Hlatshwayo, T. T.; Kuhudzai, R. J.; Wendler, E.; Wesch, W.; Chakraborty, P.; da Silveira, E. F.

    2013-11-01

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag+, I+ and Xe+ ions were separately implanted into 6H-SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H-SiC wafers implanted with 360 keV Ag+ ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I+ ions implanted at 600 °C into 6H-SiC and annealed at 1600 °C. The 6H-SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H-SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room temperature heavy ion bombardment. Subsequent

  17. Identification and analysis of the human murine putative chromatin structure regulator SUPT6H and Supt6h

    SciTech Connect

    Chiang, Pei-Wen; Wang, SuQing; Hillman, J.

    1996-06-15

    We have isolated and sequenced SUPT6H and Supt6h, the human and murine homologues of the Saccharomyces cerevisiae and Caenorhabditis elegans genes SPT6 (P using 1603 aa = 6.7 e-{sup 95}) and emb-5 (P using 1603 aa = 7.0 e-{sup 288}), respectively. The human and murine SPT6 homologues are virtually identical, as they share >98% identity and >99% similarity at the protein level. The derived amino acid sequences of these two genes predict a 1603-aa protein (human) and a 1726-bp protein (mouse), respectively. There were several known features, including a highly acidic 5{prime}-region, a degenerate SH2 domain, and a leucine zipper. These features are consistent with a nuclear protein that regulates transcription, whose extreme conservation underscores the likely importance of this gene in mammalian development. Expression of human and murine SPT6 homologues was analyzed by Northern blotting, which revealed a 7.0-kb transcript that was expressed constitutively. The SPT6 homologue was mapped to chromosome 17q11.2 in human by somatic cell hybrid analysis and in situ hybridization. These data indicate that SUPT6H and Supt6h are functionally analogous to SPT6 and emb-5 and may therefore regulate transcription through establishment or maintenance of chromatin structure. 23 refs., 3 figs.

  18. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  19. Effect of 6H-SiC crystal growth shapes on thermo-elastic stress in the growing crystal

    NASA Astrophysics Data System (ADS)

    Shi, Yong-gui; Dai, Pei-yun; Yang, Jian-feng; Jin, Zhi-hao; Liu, Hu-lin

    2012-07-01

    The effect of 6H-SiC crystal growth shapes on the thermo-elastic stress distribution in the growing crystal was systematically investigated by using a finite element method. The thermo-elastic stress distribution in the crystal with a flat growth shape was more homogeneous than that in the crystals with concave and convex growth shapes, and the value of thermo-elasticity in the crystal with a flat growth shape was also smaller than that in the two other types of crystals. The maximum values of thermo-elastic stress appeared at interfaces between the crystal and the graphite lid. If the lid was of the same properties as 6H-SiC, the thermo-elastic stress would decrease in two orders of magnitude. Thus, to grow 6H-SiC single crystals of high quality, a transition layer of SiC formed by deposition or reaction is suggested; meanwhile the thermal field in the growth chamber should be adjusted to maintain the crystals with flat growth shapes.

  20. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, R.; Li, H.; Zhang, Z. D.; Wang, Z. S.; Zhou, S. Y.; Wang, Z.; Li, T. C.; Liu, J. R.; Fu, D. J.

    2015-08-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.

  1. Microwave annealing of ion implanted 6H-SiC

    SciTech Connect

    Gardner, J.A.; Rao, M.V.; Tian, Y.L.; Holland, O.W.; Kelner, G.; Freitas, J.A. Jr.; Ahmad, I.

    1996-12-31

    Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen(N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

  2. Microwave annealing of ion implanted 6H-SiC

    SciTech Connect

    Gardner, J.A.; Rao, M.V.; Tian, Y.L.; Holland, O.W.; Kelner, G.; Freitas, J.A. Jr.; Ahmad, I.

    1996-05-01

    Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

  3. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  4. Low damage, highly anisotropic dry etching of SiC

    SciTech Connect

    Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M.; Zetterling, C.M.; Grow, J.M.; Shul, R.J.

    1998-03-01

    A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions.

  5. High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1996-01-01

    We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

  6. Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O3+ Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS)

    NASA Astrophysics Data System (ADS)

    Williams, Christopher S.; Duan, Xiaofeng F.; Petrosky, James C.; Burggraf, Larry W.

    2011-06-01

    Three dimensional electron-positron (e--e+) momentum distributions were measured for single crystal 6H silicon carbide (SiC); both virgin and having implanted oxygen-atom defects. 6H SiC samples were irradiated by 24- MeV O3+ ions at 20 particle-nanoamps at the Sandia National Laboratory's Ion Beam Facility. O3+ ions were implanted 10.8 μm deep normal to the (0001) face of one side of the SiC samples. During positron annihilation measurements, the opposite face of the 254.0-μm thick SiC samples was exposed to positrons from a 22Na source. This technique reduced the influence on the momentum measurements of vacancy-type defects resulting from knock-on damage by the O3+ ions. A three-dimensional positron annihilation spectroscopy system (3DPASS) was used to measure e--e+ momentum distributions for virgin and irradiated 6H SiC crystal both before and following annealing. 3DPASS simultaneously measures coincident Doppler-broadening (DBAR) and angular correlation of annihilation radiation (ACAR) spectra. DBAR ratio plots and 2D ACAR spectra are presented. Changes in the momentum anisotropies relative to crystal orientation observed in 2D ACAR spectra for annealed O-implanted SiC agree with the local structure of defect distortion predicted using Surface Integrated Molecular Orbital/Molecular Mechanics (SIMOMM). Oxygen atoms insert between Si and C atoms increasing their separation by 0.9 Å forming a Si-O-C bond angle of ˜150°.

  7. Oxygen-Atom Defects In 6H Silicon Carbide Implanted Using 24- MeV O{sup 3+} Ions Measured Using Three-Dimensional Positron Annihilation Spectroscopy System (3DPASS)

    SciTech Connect

    Williams, Christopher S.; Petrosky, James C.; Burggraf, Larry W.

    2011-06-01

    Three dimensional electron-positron (e{sup -}-e{sup +}) momentum distributions were measured for single crystal 6H silicon carbide (SiC); both virgin and having implanted oxygen-atom defects. 6H SiC samples were irradiated by 24- MeV O{sup 3+} ions at 20 particle-nanoamps at the Sandia National Laboratory's Ion Beam Facility. O{sup 3+} ions were implanted 10.8 {mu}m deep normal to the (0001) face of one side of the SiC samples. During positron annihilation measurements, the opposite face of the 254.0-{mu}m thick SiC samples was exposed to positrons from a {sup 22}Na source. This technique reduced the influence on the momentum measurements of vacancy-type defects resulting from knock-on damage by the O{sup 3+} ions. A three-dimensional positron annihilation spectroscopy system (3DPASS) was used to measure e{sup -}-e{sup +} momentum distributions for virgin and irradiated 6H SiC crystal both before and following annealing. 3DPASS simultaneously measures coincident Doppler-broadening (DBAR) and angular correlation of annihilation radiation (ACAR) spectra. DBAR ratio plots and 2D ACAR spectra are presented. Changes in the momentum anisotropies relative to crystal orientation observed in 2D ACAR spectra for annealed O-implanted SiC agree with the local structure of defect distortion predicted using Surface Integrated Molecular Orbital/Molecular Mechanics (SIMOMM). Oxygen atoms insert between Si and C atoms increasing their separation by 0.9 A forming a Si-O-C bond angle of {approx}150 deg.

  8. Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate.

    PubMed

    Gajewski, Krzysztof; Kopiec, Daniel; Moczała, Magdalena; Piotrowicz, Adam; Zielony, Michał; Wielgoszewski, Grzegorz; Gotszalk, Teodor; Strupiński, Włodek

    2015-01-01

    Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0001) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current-voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface. PMID:25203361

  9. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

    NASA Astrophysics Data System (ADS)

    Sun, Zheng; Ohta, Akio; Miyazaki, Seiichi; Nagamatsu, Kentaro; Lee, Hojun; Olsson, Marc; Ye, Zheng; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-01-01

    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two-dimensional growth step, resulting in 1.2-µm crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices.

  10. Ion implantation induced swelling in 6H-SiC

    SciTech Connect

    Nipoti, R.; Albertazzi, E.; Bianconi, M.; Lotti, R.; Lulli, G.; Cervera, M.; Carnera, A.

    1997-06-01

    Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al{sup +} ions in the dose range 1.25{times}10{sup 14}{endash}3{times}10{sup 15}ionscm{sup {minus}2}. Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition. {copyright} {ital 1997 American Institute of Physics.}

  11. Trisodium citrate, Na3(C6H5O7)

    PubMed Central

    Rammohan, Alagappa; Kaduk, James A.

    2016-01-01

    The crystal structure of anhydrous tris­odium citrate, Na3(C6H5O7), has been solved and refined using synchrotron X-ray powder diffraction data, and optimized using density functional theory (DFT). There are two independent five-coordinate Na+ and one six-coordinate Na+ cations in the asymmetric unit. The [NaO5] and [NaO6] polyhedra share edges and corners to form a three-dimensional framework. There are channels parallel to the a and b axes in which the remainder of the citrate anions reside. The only hydrogen bonds are an intra­molecular one between the hy­droxy group and one of the terminal carboxyl­ate O atoms and an intermolecular one between a methylene group and the hydroxyl O atom. PMID:27308044

  12. Fabrication of SiC Blue LEDs Using Off-Oriented Substrates

    NASA Astrophysics Data System (ADS)

    Matsushita, Yasuhiko; Nakata, Toshitake; Uetani, Takahiro; Yamaguchi, Takao; Niina, Tatsuhiko

    1990-02-01

    SiC blue LEDs were fabricated by the dipping technique, using 6H-SiC substrates whose (000\\bar{1})C face varied toward the [11\\bar{2}0] or [10\\bar{1}0] direction. The surface morphology of the epitaxial layers on the off-oriented substrates was a striped pattern perpendicular to the off-axis direction. By using off-oriented substrates, the degradation of SiC blue LEDs can be greatly reduced. High-efficiency blue LEDs (12 mcd at 20 mA) were fabricated by increasing the amount of Al dopant in the n-type layer.

  13. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    NASA Astrophysics Data System (ADS)

    Kuhudzai, R. J.; van der Berg, N. G.; Malherbe, J. B.; Hlatshwayo, T. T.; Theron, C. C.; Buys, A. V.; Botha, A. J.; Wendler, E.; Wesch, W.

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm-2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  14. Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD Sic Epilayers

    NASA Technical Reports Server (NTRS)

    Larkin, D. J.

    1995-01-01

    The use of site-competition epitaxy, which is based on intentional variation of the Si/C ratio during epitaxy, has now been reproduced in numerous national and international laboratories. However, previous reports have only considered dopant incorporation control for epitaxy on the Si-face 6H-SiC(OOO1) substrates. Presented in this paper is the extension of this technique for control of phosphorous incorporation and also a comparison of controlled doping on C-face 6H-SiC(OOO1) versus Si-face 6H-SiC(OOO1) substrates for aluminum, boron, nitrogen, and phosphorous.

  15. The status of SiC bulk growth from an industrial point of view

    NASA Astrophysics Data System (ADS)

    Müller, St. G.; Glass, R. C.; Hobgood, H. M.; Tsvetkov, V. F.; Brady, M.; Henshall, D.; Jenny, J. R.; Malta, D.; Carter, C. H.

    2000-04-01

    Silicon-carbide-based device technology as well as the volume production of nitride-based, high brightness blue and green LEDs fabricated on SiC substrates has made tremendous progress within the last several years. The commercial availability of large, high-quality SiC substrates is a key issue for the realization of the full potential of this technology. The current status of SiC bulk sublimation growth for the industrial production of 50 mm diameter 4H and 6H wafers and the quality improvement of 75 mm wafers is reviewed. Results at Cree show a continous reduction of the micropipe density in SiC substrates, demonstrating micropipe free material of a 25 mm diameter and densities as low as 1.1 cm -2 for an entire 50 mm 4H-SiC wafer. We present results of modeling the relevant heat transfer processes during crystal growth and the thermoelastic stress in the growing crystal. The effect on dislocation generation is discussed. The recent interest in SiC for the production of a unique gemstone material (moissanite) additionally increases the demand for high-quality SiC bulk material.

  16. Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Ding, Siye; Yan, Guanchao; Zhu, Xiaodong; Zhou, Haiyang

    2009-04-01

    Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp2/sp3 carbon-rich composition.

  17. Positron diffraction study of SiC(0 0 0 1) surface

    NASA Astrophysics Data System (ADS)

    Kawasuso, A.; Maekawa, M.; Yoshikawa, M.; Ichimiya, A.

    2005-05-01

    Surface structures of 6H SiC(0 0 0 1) after heat treatment in a UHV has been studied using reflection high-energy positron diffraction (RHEPD). After heat treatment at 900 °C, a typical interference effect of positron waves due to Si adatoms appears in the total reflection region of the rocking curve. The further heat treatment at 1100 °C results in surface graphitization. The rocking curve is well reproduced by theoretical calculation assuming the graphite monolayer on SiC substrate. The interlayer distance is fairly large (2.5-3.2 Å), which is comparable to that in the graphite monocrystal suggesting that the weak binding of the graphite monolayer to the SiC surface by the van der Waals force.

  18. Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties

    NASA Astrophysics Data System (ADS)

    Wu, Renbing; Li, Baosheng; Gao, Mingxia; Chen, Jianjun; Zhu, Qimiao; Pan, Yi

    2008-08-01

    Single crystalline SiC nanowires were synthesized by a catalyst free vapor deposition method using elemental silicon and graphite carbon as the starting materials. The phase, morphology, crystal structure, and defects of the products were characterized by x-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Within a 6 h reaction time, the morphology of the SiC nanowires can be tuned to cylinder, hexagonal prism, or bamboo shape by simply altering the reaction temperature from 1470 °C, 1550 °C to 1630 °C, respectively. The photoluminescence of these differently shaped SiC nanowires was measured and is discussed. Based on the characterization results, the vapor-solid growth mechanisms for the multi-shaped SiC nanowires are proposed by taking into account the possible reactions between intermediate gas phases, the reaction steps, and the surface energy minimization.

  19. Structural and microstructural characterization of III-nitrides on 6H-silicon carbide (0001) substrates

    NASA Astrophysics Data System (ADS)

    Preble, Edward Alfred

    Characterization of nitride films on 6H-SiC (0001) wafers via x-ray, TEM, and AFM was accomplished on standard GAN thin films with AlN or AlGaN buffer layers. TEM sample thinning capability was improved through the use of Nomarski in an optical microscope to gauge the thickness of the sample during preparation. TEM analysis was then completed of Au and Pt films deposited on chemical vapor cleaned GaN with annealed up to 800°C. Chemical reactions were detected in x-ray measurements of the 800°C Pt samples and GaN/metal interface roughening were confirmed by TEM images in both metals. Interface roughening is attributed to the chemical reactions and interfacial stresses greater than the yield stress of the metal created during heat treatments by the difference in the thermal expansion coefficients of the Ga and the metals. The GaN rocking curves were found to track very closely to the values of the underlying substrate and changes in buffer layer growth temperatures were found to change the screw and edge dislocation populations of subsequent GaN layers. GaN grown on 1030°C AlN buffer layers showed the lowest edge dislocation populations when compared against buffers grown in the range of 1010--1220°C, even though the 1220°C AlN was much smoother. AlGaN buffer layers provided more edge dislocation reduction, with a 1090°C Al0.2Ga0.8N layer yielding the best GaN rocking curve values found in this work. GaN films with AlN buffer layers grown on hydrogen etched SiC substrates did not show rocking curve improvement when compared against samples with unetched substrates. The AlN layers showed extremely narrow, substrate limited, on-axis rocking curve values, but it is not clear as to whether additional defects are present that may broaden the off-axis rocking curves, causing the poorer results seen in the GaN films. Reciprocal space maps of uncoalesced, maskless pendeo epitaxy samples revealed that the wing regions are shielded from poor substrate material when

  20. Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2016-04-01

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/ m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g· b and g· b× l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Finally, the implication of these results for improving the LTC growth process is addressed.

  1. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... reference was approved by the Director of the Federal Register in accordance with 5 U.S.C. 552(a) and 1 CFR... in that census are organized by Standard Industrial Classification (SIC), the statistical... (SIC) code level.” (b) The Standard Industrial Classification (SIC) codes listed in appendix A and...

  2. SiC Micropipe Sprecta

    NASA Astrophysics Data System (ADS)

    Leff, David; Frasca, Albert

    1997-05-01

    This report focuses on the spectral response of 4H SiC PN junction micropipes when reverse and forward biased. Reverse biased 4H SiC PN junctions give a very strong UV line, 385nm (3.22eV), and blue line, 475nm (2.61eV). In the forward bias direction the spectra do not contain the UV, only the blue line, 490nm (2.53eV), with considerably better resolution. For isolating and measuring the micropipe spectra and structure, a sample fixture was fabricated from a power transistor case. In order to activate the micropipes in the SEM, a vacuum feed-thru was made from another power transistor case. The emitter and base leads were used as the vacuum feed-thru and were used to mount a very fine spring for making contact to the 1mm X 1mm PN junction on the SiC chip. In our attempts to study these pipes and their properties, we utilized the SE, BSE, and X-ray detectors on the SEM, a stereo microscope, and a grading monochrometer. From the utilization of this equipment, we found the locations of the micropipes, the forward and reverse bias spectrum, and the possible structural faults in the SiC. Thanks to Dr. Philip Neudeck at LeRC, and Dr. Kenneth Bladh of Wittenberg.

  3. Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H-SiC(0001) surface during scanning tunneling and atomic force microscopy studies

    NASA Astrophysics Data System (ADS)

    Morán Meza, José Antonio; Lubin, Christophe; Thoyer, François; Cousty, Jacques

    2015-06-01

    The structural and mechanical properties of an epitaxial graphene (EG) monolayer thermally grown on top of a 6H-SiC(0001) surface were studied by combined dynamic scanning tunneling microscopy (STM) and frequency modulation atomic force microscopy (FM-AFM). Experimental STM, dynamic STM and AFM images of EG on 6H-SiC(0001) show a lattice with a 1.9 nm period corresponding to the (6 × 6) quasi-cell of the SiC surface. The corrugation amplitude of this (6 × 6) quasi-cell, measured from AFM topographies, increases with the setpoint value of the frequency shift Δf (15-20 Hz, repulsive interaction). Excitation variations map obtained simultaneously with the AFM topography shows that larger dissipation values are measured in between the topographical bumps of the (6 × 6) quasi-cell. These results demonstrate that the AFM tip deforms the graphene monolayer. During recording in dynamic STM mode, a frequency shift (Δf) map is obtained in which Δf values range from 41 to 47 Hz (repulsive interaction). As a result, we deduced that the STM tip, also, provokes local mechanical distortions of the graphene monolayer. The origin of these tip-induced distortions is discussed in terms of electronic and mechanical properties of EG on 6H-SiC(0001).

  4. Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models

    SciTech Connect

    Mattausch, Alexander; Bockstedte, Michel; Pankratov, Oleg; Steeds, John W.; Furkert, Suzanne; Hayes, Jonathan M.; Sullivan, Wayne; Wright, Nick G.

    2006-04-15

    Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C{sub 3}){sub Si} and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. We report experiments that, indeed, confirm the existence of a low-energy mode for the U center (as well as for the HT3 and HT4 centers with spectral details similar to the U center). We calculated the isotope splitting for the (C{sub 3}){sub Si}-defect and found near-perfect agreement with our data. In addition, we discuss the carbon di-interstitial (C{sub 2}){sub Hex} as a model for the Z and HT5 centers. The isotope splitting is also well reproduced, but the absolute values of the local mode energies show a discrepancy of about 10 meV.

  5. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Z; Du, Li; Edgar, J H; Payzant, E Andrew; Walker, Larry R; Liu, R; Engelhard, M H

    2005-01-01

    AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  6. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Zheng; Du, L; Edgar, James H.; Payzant, Edward A.; Walker, L. R.; Liu, R.; Engelhard, Mark H.

    2005-12-20

    AlN-SiC alloy crystals, with a thickness greater than 500 m, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8? or 3.68?) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  7. The first potential energy surfaces for the C6H--H2 and C6H--He collisional systems and their corresponding inelastic cross sections

    NASA Astrophysics Data System (ADS)

    Walker, Kyle M.; Dumouchel, Fabien; Lique, François; Dawes, Richard

    2016-07-01

    Molecular anions have recently been detected in the interstellar and circumstellar media. Accurate modeling of their abundance requires calculations of collisional data with the most abundant species that are usually He atoms and H2 molecules. In this paper, we focus on the collisional excitation of the first observed molecular anion, C6H-, by He and H2. Theoretical calculations of collisional cross sections rely generally on ab initio interaction potential energy surfaces (PESs). Hence, we present here the first PESs for the C6H--H2 and C6H--He van der Waals systems. The ab initio energy data for the surfaces were computed at the explicitly correlated coupled cluster with single, double, and scaled perturbative triple excitations level of theory. The method of interpolating moving least squares was used to construct 4D and 2D analytical PESs from these data. Both surfaces are characterized by deep wells and large anisotropies. Analytical models of the PESs were used in scattering calculations to obtain cross sections for low-lying rotational transitions. As could have been anticipated, important differences exist between the He and H2 cross sections. Conversely, no significant differences exist between the collisions of C6H- with the two species of H2 (para- and ortho-H2). We expect that these new data will help in accurately determining the abundance of the C6H- anions in space.

  8. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.; Beheim, Glenn M.

    2006-01-01

    High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

  9. Piezoresistance behaviors of p-type 6H-SiC nanowires.

    PubMed

    Gao, Fengmei; Zheng, Jinju; Wang, Mingfang; Wei, Guodong; Yang, Weiyou

    2011-11-21

    We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors. PMID:21959148

  10. High-performance surface acoustic wave resonators in the 1 to 3 GHz range using a ScAlN/6H-SiC structure.

    PubMed

    Hashimoto, Ken-ya; Sato, Shuhei; Teshigahara, Akihiko; Nakamura, Takuya; Kano, Kazuhiko

    2013-03-01

    This paper describes application of Sc-doped AlN (ScAlN) to wideband SAW devices in the 1 to 3 GHz range. First, it is shown theoretically that large SAW velocity and electromechanical coupling factor are simultaneously achievable when the ScAlN film is combined with a base substrate with extremely high acoustic wave velocities, such as diamond and SiC. Next, SAW delay lines are fabricated on the ScAlN/6H-SiC structure, and reasonable agreement between the theory and experiment is obtained. Finally, one-port SAW resonators are fabricated on the structure, and it is shown that high-performance is achievable in the 1 to 3 GHz range by use of the structure. PMID:23475930

  11. Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

    NASA Astrophysics Data System (ADS)

    Kuhudzai, R. J.; Malherbe, J. B.; van der Berg, N. G.; Hlatshwayo, T. T.; Odutemowo, O.; Prinsloo, L. C.; Buys, A. V.; Erasmus, R.; Wendler, E.

    2015-12-01

    The recystallisation behaviour and thermal decomposition of the near surface amorphised region of 6H-SiC have been investigated by Raman spectroscopy. 360 keV ions of iodine and silver were implanted at room temperature into wafers of 6H-SiC resulting in the amorphisation of the near surface region. Vacuum annealing of the samples was performed at 1200 °C for 5 h and then sequentially from 1200 to 1600 °C in steps of 100 °C for 30 h at each annealing temperature. Raman spectroscopy was performed using two laser wavelength excitation regimes, the 514 nm laser (visible region) and the 244 nm laser (deep ultraviolet region, DUV). Measurements in the visible region for samples annealed at 1200 °C for 5 h showed that the characteristic 6H-SiC peaks, namely, the Transverse Optical (TO) and Longitudinal Optical (LO) are similar to the virgin samples, albeit with lower intensity due to some retained defects upon recystallisation of the SiC surface region. The similarities between the virgin spectra and the annealed sample were due to the deep penetration of the 514 nm laser into 6H-SiC resulting in the signal from the bulk undamaged 6H-SiC contributing to the overall spectra. However, DUV laser excitation, which only probes the near surface region, shows that after annealing the peaks are broader and asymmetrical compared to the virgin samples. DUV Raman spectra of samples annealed at 1600 °C indicate that SiC has completely decomposed and the top surface layer is now covered by a carbon layer. However the deeper penetrating laser in the visible region showed that the extent of decomposition at 1600 °C was greater for the silver implanted samples than for the iodine implanted samples.

  12. Update on SIC-Based Inverter Technology

    SciTech Connect

    Chinthavali, Madhu Sudhan; Zhang, Hui; Tolbert, Leon M; Ozpineci, Burak

    2009-01-01

    This paper presents a study of silicon carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.

  13. Irradiation effects in 6H-SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

    NASA Astrophysics Data System (ADS)

    Chen, Xiaofei; Zhou, Wei; Feng, Qijie; Zheng, Jian; Liu, Xiankun; Tang, Bin; Li, Jiangbo; Xue, Jianming; Peng, Shuming

    2016-09-01

    Irradiation effects of neutron and 3 MeV C+, Si+ in 6H-SiC were investigated by Raman spectroscopy and high-resolution XRD. The total disorder values of neutron irradiated SiC agree well with that of samples irradiated by ions at the same doses respectively. On the other hand, high-resolution XRD results shows that the lattice strain rate caused by neutron irradiation is 6.8%/dpa, while it is only 2.6%/dpa and 4.2%/dpa for Si+ and C+ irradiations respectively. Our results illustrate that the total disorder in neutron irradiated SiC can be accurately simulated by MeV Si+ or C+ irradiations at the same dose, but for the lattice strain and strain-related properties like surface hardness, the depth profile of irradiation damages induced by energetic ions must be considered. This research will contribute to a better understanding of the difference in irradiation effects between neutron and heavy ions.

  14. Photoelectrochemical etching of silicon carbide (SiC) and its characterization

    NASA Technical Reports Server (NTRS)

    Collins, D. M.; Harris, G. L.; Wongchotigul, K.

    1995-01-01

    Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

  15. SiC field-effect devices operating at high temperature

    NASA Astrophysics Data System (ADS)

    Ghosh, Ruby N.; Tobias, Peter

    2005-04-01

    Field-effect devices based on SiC metal-oxide-semiconductor (MOS) structures are attractive for electronic and sensing applications above 250°C. The MOS device operation in chemically corrosive, high-temperature environments places stringent demands on the stability of the insulating dielectric and the constituent interfaces within the structure. The primary mode of oxide breakdown under these conditions is attributed to electron injection from the substrate. The reliability of n-type SiC MOS devices was investigated by monitoring the gate-leakage current as a function of temperature. We find current densities below 17 nA/cm2 and 3 nA/cm2 at electric field strengths up to 0.6 MV/cm and temperatures of 330°C and 180°C, respectively. These are promising results for high-temperature operation, because the optimum bias point for SiC MOS gas sensors in near midgap, where the field across the oxide is small. Our results are valid for n-type SiC MOS sensors in general and have been observed in both the 4H and 6H polytypes.

  16. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect

    Guo, Y.; Guo, L. W. E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L.; Yang, R.; Chen, X. L. E-mail: xlchen@iphy.ac.cn

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  17. Fabrication and characterization of ZnO nanorods/p-6H-SiC heterojunction LED by microwave-assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Hassan, J. J.; Mahdi, M. A.; Ramizy, Asmiet; Abu Hassan, H.; Hassan, Z.

    2013-01-01

    High-quality vertically aligned zinc oxide nanorods were successfully grown on p-type 6H-SiC substrate by microwave-assisted chemical bath deposition. The novel seed material poly(vinyl alcohol)-Zn(OH)2 nanocomposites was used to seed the 6H-SiC substrate. X-ray diffraction analysis and field emission scanning electron microscopy showed that the synthesized ZnO nanorods were vertically well aligned in the direction of the (0 0 2) plane of the hexagonal structure. The optical properties were examined by photoluminescence spectroscopy, which showed a high-intensity UV peak compared with visible defect peaks. The current-voltage property proved the good rectifier characteristic of the n-type ZnO nanorod/p-type SiC diode heterojunction. The electroluminescence emission of the heterojunction LED was sufficiently high to be seen with the naked eye, with a broad peak centered at the green part of the visible spectrum.

  18. Spin centres in SiC for all-optical nanoscale quantum sensing under ambient conditions

    NASA Astrophysics Data System (ADS)

    Anisimov, A. N.; Babunts, R. A.; Kidalov, S. V.; Mokhov, E. N.; Soltamov, V. A.; Baranov, P. G.

    2016-07-01

    Level anticrossing (LAC) spectroscopy was demonstrated on a family of uniaxially oriented spin colour centres with S = 3/2 in the ground and excited states in hexagonal 4H-, 6H- and rhombic 15R- SiC polytypes. It was shown that these centres exhibit unique characteristics such as optical spin alignment up to the temperatures of 250 ◦C. A sharp variation of the IR photoluminescence intensity in the vicinity of LAC with the record contrast was observed, which can be used for a purely all-optical sensing of the magnetic field and temperature without applying radiofrequency field. A distinctive feature of the LAC signal is weak dependence on the direction of the magnetic field that allows one to monitor the LAC signals in the nonoriented systems, such as powder of SiC nanocrystals.

  19. Reactive sintering of SiC

    NASA Technical Reports Server (NTRS)

    Kim, Y. W.; Lee, J. G.

    1984-01-01

    Investigation of the sintering processes involved in the sintering of SiC revealed a connection between the types and quantities of sintering additives or catalysts and densification, initial shrinkage, and weight loss of the sintered SiC material. By sintering processes, is meant the methods of mass transport, namely solid vapor transport and grain boundary diffusion.

  20. Coordination chemistry of silver(I) with the nitrogen-bridged ligands (C(6)H(5))(2)PN(H)P(C(6)H(5))(2) and (C(6)H(5))(2)PN(CH(3))P(C(6)H(5))(2): the effect of alkylating the nitrogen bridge on ligand bridging versus chelating behavior.

    PubMed

    Sekabunga, E J; Smith, Michele L; Webb, T R; Hill, W E

    2002-03-11

    The coordination chemistry of silver(I) with the nitrogen-bridged ligands (C(6)H(5))(2)PN(R)P(C(6)H(5))(2) [R = H (dppa); R = CH(3) (dppma)] has been investigated by (31)P NMR and electrospray mass spectrometry (ESMS). Species observed by (31)P NMR include Ag(2)(mu-dppa)(2+), Ag(2)(mu-dppa)(2)(2+), Ag(2)(mu-dppa)(3)(2+), Ag(2)(mu-dppma)(2+), Ag(2)(mu-dppma)(2)(2+), and Ag(eta(2)-dppma)(2)(+). Species observed by ESMS at low cone voltages were Ag(2)(dppa)(2)(2+), Ag(2)(dppa)(3)(2+), Ag(2)(dppma)(2)(2+), and Ag(dppma)(2)(+). (C(6)H(5))(2)PN(CH(3))P(C(6)H(5))(2) showed a strong tendency to chelate, while (C(6)H(5))(2)PN(H)P(C(6)H(5))(2) preferred to bridge. Differences in the bridging versus chelating behavior of the ligands are assigned to the Thorpe-Ingold effect, where the methyl group on nitrogen sterically interacts with the phenyl groups on phosphorus. The crystal structure of the three-coordinate dinuclear silver(I) complex (Ag(2)[(C(6)H(5))(2)PN(H)P(C(6)H(5))(2)](3))(BF(4))(2) has been determined. Bond distances include Ag-Ag = 2.812(1) A, Ag(1)-P(av) = 2.492(3) A, and Ag(2)-P(av) = 2.509(3) A. The compound crystallizes in the monoclinic space group Cc at 294 K, with a = 18.102(4)(o), Z = 4, V = 7261(3) A(3), R = 0.0503, and R(W) = 0.0670. PMID:11874357

  1. Growth of Si thin film on 6H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Wu, Hsin-Ju; Hoang, M. Tien; Li, Yuntao; First, Phillip N.

    2015-03-01

    Graphene is much studied for its unusual electronic properties. Other carbon group elements such as silicon (Si) and germanium (Ge) also are predicted to have stable 2D phases for which the electronic structure and properties could be still more interesting. Silicon carbide, already an excellent insulating substrate for epitaxial graphene, could potentially play a similar role for silicene. Commonalities in the substrate and processing may lead to the integration of carbon and silicon technologies. Here, we use surface analysis techniques (LEED, AES, STM) to investigate the formation of 2D Si on SiC(0001), under low pressures of silane or silicon. Similar methods allow control of surface graphene growth by compensating Si desorption from SiC. Among several Si-rich reconstructions, we find a single stable hexagonal phase, at a coverage close to twice the Si density predicted for silicene, and with a unit cell consistent with a commensurate layer of silicene or silicane. For a graphitized SiC starting surface, silane is shown to etch graphene, reforming SiC. Work supported in part by NSF (DMR-1106131, DMR-0820382 [MRSEC]).

  2. Global reaction route mapping of isomerization pathways of exotic C{sub 6}H molecular species

    SciTech Connect

    Vikas, E-mail: qlabspu@yahoo.com; Kaur, Gurpreet

    2013-12-14

    C{sub 6}H radical is known to exist in the astrophysical environment in linear form; however, it may originate from nonlinear isomeric forms. Potential energy surface of C{sub 6}H is explored to search isomers of C{sub 6}H and transition states connecting them. This work reports first-ever identification of reaction pathways for isomerization of C{sub 6}H. The reaction route search is performed through global reaction route mapping method, which utilizes an uphill walking technique based on an anharmonic downward distortion following approach to search intermediates and transition states. The computations performed at the CASSCF/aug-cc-pVTZ, CCSD(T)/6-311++G(d,p)//DFT/B3LYP/6-311++G(d,p), and DFT/B3LYP/aug-cc-pVTZ levels of the theory identified 14 isomers (including 8 new isomeric forms of C{sub 6}H) and 28 transition states. Most of the identified isomers are found to have significant multireference character. The kinetic stability and natural bond orbital analysis of the identified isomers is also investigated. The isomeric forms are further characterized using spectral analysis involving rotational constants, vibrational frequencies, and Raman scattering activities as well as analyzing the effect of isotopic substitution of hydrogen on the spectral features. This study proposes that the linear-C{sub 6}H can readily isomerize to a six-member ring isomer.

  3. Direct ab initio study of the C6H6 + CH3/C2H5 = C6H5 + CH4/C2H6 reactions

    NASA Astrophysics Data System (ADS)

    Mai, Tam V.-T.; Ratkiewicz, Artur; Duong, Minh v.; Huynh, Lam K.

    2016-02-01

    A kinetic study of the reactions C6H6 + CH3/C2H5 = C6H5 + CH4/C2H6 was carried out in the temperature range of 300-2500 K using high levels of electronic structure theory, namely, CCSD(T)/CBS//BH&HLYP/cc-pVDZ, and canonical variational transition state theory (CVT) with corrections for small curvature tunneling (SCT) and hindered internal rotation (HIR) treatments. It is found that variational effect is not important and both SCT and HIR corrections noticeably affect the rate constants. Being in good agreement with literature data, the calculated results provide solid basis information for the investigation of the polyaromatic hydrocarbon (PAH) + alkyl radical reaction, an important class in combustion and soot formation.

  4. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  5. Moissanite (SiC) from kimberlites: Polytypes, trace elements, inclusions and speculations on origin

    NASA Astrophysics Data System (ADS)

    Shiryaev, A. A.; Griffin, W. L.; Stoyanov, E.

    2011-03-01

    An extensive collection of moissanite (SiC) grains from the Mir, Aikhal and Udachnaya kimberlite pipes of Yakutia has been characterized in terms of structural perfection, defects and the major- and trace-element chemistry of SiC and its included phases. The natural grains are clearly distinct from synthetic SiC produced by various methods. Most of the natural SiC grains are 6H and 15R polytypes. Some of the grains (< 10%) show extremely complex Raman spectra indicating strongly disordered structures. Some grains also show zoning in impurities, C-isotope composition and cathodoluminescence brightness. Inclusions are heterogeneously distributed within the natural SiC; their size varies from a few nanometers to hundreds of microns. The most abundant inclusions in SiC are Si metal and iron silicide (FeSi 2); a Si-C-O phase with stoichiometry close to Si 4(C,O) 7 probably is related to the silicon oxycarbides. FeSi 2 commonly appears to have exsolved from Si metal; in some cases Ti metal then has exsolved from FeSi 2 to form symplectites. Trace elements are strongly concentrated in the inclusions of FeSi 2 and Si 4(C,O) 7. The trace-element patterns of these phases are generally similar in the different kimberlites, but there are some consistent minor differences between localities. The trace-element patterns of FeSi 2 and Si 4(C,O) 7 are strongly enriched in LREE/HREE and are broadly similar to the patterns of kimberlites, carbonatites and some diamond-forming fluids. However, extreme negative anomalies in Eu (and Sm) suggest highly reducing conditions. Yb also shows strong negative anomalies in FeSi 2 from all three localities, and in Si 4(C,O) 7 from Aikhal and Mir, but not in those from Udachnaya. Trace-element chemistry and the nature of the inclusions provide a reliable basis for distinguishing natural and synthetic SiC. Textural and chemical features and the presence of oxidation products (Si 4(C,O) 7 and SiO 2) suggest that moissanite grew at high temperatures

  6. KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor

    SciTech Connect

    Muntele, C.I.; Ila, D.; Williams, E.K.; Poker, D.B.; Hensley, D.K.

    1999-11-29

    Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.

  7. Fabrication and morphology of porous p-type SiC

    NASA Astrophysics Data System (ADS)

    Shishkin, Y.; Ke, Y.; Devaty, R. P.; Choyke, W. J.

    2005-02-01

    Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When the etching is done on the C face, the pore wall thickness decreases with increasing current density. The morphology of the front surface of the sample depends on the prior treatment of the workpiece surface. The porosity is estimated based on the analysis of scanning electron microscope images, charge-transfer calculations, and gravimetric analysis.

  8. Evaluation of some basic positron-related characteristics of SiC

    SciTech Connect

    Brauer, G.; Anwand, W.; Nicht, E.; Wagner, N.; Puska, M.J.; Korhonen, T.

    1996-07-01

    First-principles electronic structure and positron-state calculations for perfect and defected 3C- and 6H-SiC polytypes of SiC have been performed. Monovacancies and divacancies have been treated; the influence of lattice position and nitrogen impurities have been considered in the former case. Positron affinities and binding energies have been calculated; trends are discussed, and the results compared with recent atomic superposition method calculations. Experimental determination of the electron and positron work functions of the same 6H-SiC allows an assessment of the accuracy of the present first-principles calculations, and to suggest further improvements. {copyright} {ital 1996 The American Physical Society.}

  9. Refractory Oxide Coatings on Sic Ceramics

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

    1994-01-01

    Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

  10. Multiphoton ionization studies of clusters of immiscible liquids. II. C6H6- (H2O)n, n=3-8 and (C6H6)2- (H2O)1,2

    NASA Astrophysics Data System (ADS)

    Garrett, Aaron W.; Zwier, Timothy S.

    1992-03-01

    Resonant two-photon ionization (R2PI) time-of-flight mass spectroscopy is used to record S0-S1 spectra of the neutral complexes C6H6-(H2O)n with n=3-8 and (C6H6)2-(H2O)1,2. Due to limitations imposed by the size of these clusters, a number of vibronic level arguments are used to constrain the gross features of the geometries of these clusters. Among the spectral clues provided by the data are the frequency shifts of the transitions, their van der Waals structure, the fragmentation of the photoionized clusters, and the complexation-induced origin intensity and 610 splitting. In the 1:3 cluster, simple arguments are made based on the known structures of the 1:1 and 1:2 clusters which lead to the conclusion that all three water molecules reside on the same side of the benzene ring. Three structures for the 1:3 cluster are proposed which are consistent with the available data. Of these, only one is also consistent with the remarkable similarity of the 1:4 and 1:5 spectra to those of the 1:3 cluster. This structure involves a cyclic water trimer in which one of the water molecules is near the sixfold axis in a π hydrogen-bonded configuration. This structure is then expanded in the 1:4 and 1:5 clusters to incorporate the fourth and fifth water molecules in cyclic structures which place the additional water molecules far from the benzene ring without disturbing the interaction of the other water molecules with the benzene ring. For 1:n clusters with n≥6, subtle and then significant changes are observed in the spectra which indicate changes in the way the water cluster interacts with the benzene ring. This development occurs at precisely the water cluster size which calculations predict that cagelike water cluster structures will begin to compete and eventually be favored over large cyclic structures. Finally, cursory scans of the 2:1 cluster show that this cluster also fragments efficiently upon photoionization by loss of a single water molecule and that it possesses a

  11. Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.

    2002-01-01

    High-g accelerometers are needed in certain applications, such as in the study and analysis of high-g impact landings and projectiles. Also, these accelerometers must survive the high electromagnetic fields associated with the all-electric vehicle technology needed for aerospace applications. The choice of SiC is largely due to its excellent thermomechanical properties over conventional silicon-based accelerometers, whose material properties inhibit applicability in high electromagnetic radiation and high temperatures (>150 C) unless more complex and sometimes costly packaging schemes are adopted. This work was the outcome of a NASA Glenn Research Center summer internship program, in collaboration with Cornell University and the Munitions Directorate of the U.S. Air Force in Eglin, Florida. It aimed to provide the enabling technology infrastructure (modeling, fabrication, and validation) for the implementation of SiC accelerometers designed specifically for harsh environments.

  12. High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

    NASA Astrophysics Data System (ADS)

    Fernández, J.; Godignon, P.; Berberich, S.; Rebollo, J.; Brezeanu, G.; Millán, J.

    1996-09-01

    This paper presents the high frequency electrical characteristics and modelling of Al/SiO 2/ p-type 6HSiC structures. The oxide was thermally grown under dry conditions. Capacitance and conductance vs bias and frequency measurements have been performed in daylight and exposing the capacitors to u.v. light. The experimental Cm- Vg and Gm- Vg characteristics show hysteresis effects, which are more important when the samples are exposed to 254 nm u.v. light. This behaviour can be explained in terms of interface traps. The MOS structure modelling is based on an interface trap model in which the interface trap levels are considered to be continuously distributed in the SiC bandgap and only charge exchange between interface trap levels and the SiC bands is allowed. From this formulation and from the Gm- f characteristics, the interface state density and the interface trap time constant have been determined.

  13. Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

    SciTech Connect

    Sun, C. C.; You, A. H.; Wong, E. K.

    2010-07-07

    The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10{sup 18} cm{sup 3} in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

  14. Comparison of SiC mirror approaches

    NASA Astrophysics Data System (ADS)

    Carrigan, Keith; Riso, Michael; Khatri, Shayna; Douglas, Christopher

    2013-09-01

    Silicon Carbide (SiC) mirrors hold many advantages over traditional optical materials and are increasingly common in optical systems. The wide range of optical applications necessitates different approaches to the manufacturing and finishing of SiC mirrors. Three key advancements have led to this differentiation: 1) manufacturing of CVD clad SiC mirrors in near cost and schedule parity with Zerodur, 2) super-polish of amorphous Silicon claddings, 3) low-roughness polishing results of bare reaction-bonded SiC aspheres. Three approaches which utilize these advancements will be discussed, each with its own strengths and weaknesses for specific applications. The relative schedules and performance of these approaches will also be compared, with Zerodur used as a reference.

  15. SiC nanowires: A photocatalytic nanomaterial

    SciTech Connect

    Zhou Weimin; Yan Lijun; Wang Ying; Zhang Yafei

    2006-07-03

    Single-crystal {beta}-SiC nanowires coated with amorphous SiO{sub 2} were synthesized by a simple thermal evaporation technique. The photocatalytic activity of the SiC nanowires was characterized by measuring the photodegradation rate of acetaldehyde catalyzed by SiC as a function of UV irradiation time. It exhibited excellent photocatalytic activity, leading to the efficient decomposition of acetaldehyde by irradiation with UV light. The progress of the photocatalytic reaction can be monitored by the evolution of one of the products, CO{sub 2}. It has been observed that the as-synthesized SiC nanowires (with the SiO{sub 2} coating) have higher catalytic activity than the HF-etched, oxide-free SiC nanowires.

  16. Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

    NASA Astrophysics Data System (ADS)

    Shiramomo, T.; Gao, B.; Mercier, F.; Nishizawa, S.; Nakano, S.; Kakimoto, K.

    2014-01-01

    The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

  17. Development of Sic Gas Sensor Systems

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

    2002-01-01

    Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

  18. Improved Method of Manufacturing SiC Devices

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.

    2005-01-01

    . However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.

  19. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

    SciTech Connect

    Bagraev, N. T. Danilovskii, E. Yu.; Gets, D. S.; Kalabukhova, E. N.; Klyachkin, L. E.; Koudryavtsev, A. A.; Malyarenko, A. M.; Mashkov, V. A.; Savchenko, D. V.; Shanina, B. D.

    2015-05-15

    We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the {sup 14}N nucleus seem to attribute this triplet center to the N-V{sub Si} defect.

  20. Stability and isomerization reactions of phenyl cation C6H5+ isomers

    NASA Astrophysics Data System (ADS)

    Shi, Dandan; Yang, Xue; Zhang, Xiaomei; Shan, Shimin; Xu, Haifeng; Yan, Bing

    2016-03-01

    As a key polyatomic molecular cation that plays a pivotal role in growth of the polycyclic aromatic hydrocarbons, phenyl cation C6H5+ exhibits various isomers and isomerization reactions. Investigation on the structure and stability of the isomers as well as the isomerization is important for better understanding the chemical reactions involving C6H5+ cations. In this work, we have performed a theoretical study on the stability and isomerization reactions of C6H5+ isomers at density functional theory B3LYP/6-311G (d, p) level. We have obtained a total of 60 isomers of C6H5+ cations, most of which are reported for the first time. The geometries, vibrational frequencies, thermodynamic properties and stability of 28 out of 60 isomers have been summarized in detail. Different ring-to-ring and ring-to-chain isomerization pathways, which are connected via 28 transition states, have been investigated using the intrinsic reaction coordinate method. The results show that the isomerization reactions occur via hydrogen migration followed by bond-breaking and reconstruction.

  1. 17 CFR 240.6h-1 - Settlement and regulatory halt requirements for security futures products.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 17 Commodity and Securities Exchanges 3 2010-04-01 2010-04-01 false Settlement and regulatory halt... § 240.6h-1 Settlement and regulatory halt requirements for security futures products. (a) For the... exchange or national securities association that lists the security. (3) Regulatory halt means a...

  2. 17 CFR 240.6h-1 - Settlement and regulatory halt requirements for security futures products.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 17 Commodity and Securities Exchanges 3 2011-04-01 2011-04-01 false Settlement and regulatory halt... § 240.6h-1 Settlement and regulatory halt requirements for security futures products. (a) For the... exchange or national securities association that lists the security. (3) Regulatory halt means a...

  3. 17 CFR 240.6h-1 - Settlement and regulatory halt requirements for security futures products.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 17 Commodity and Securities Exchanges 3 2012-04-01 2012-04-01 false Settlement and regulatory halt... § 240.6h-1 Settlement and regulatory halt requirements for security futures products. (a) For the... exchange or national securities association that lists the security. (3) Regulatory halt means a...

  4. 17 CFR 240.6h-1 - Settlement and regulatory halt requirements for security futures products.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 17 Commodity and Securities Exchanges 4 2014-04-01 2014-04-01 false Settlement and regulatory halt... § 240.6h-1 Settlement and regulatory halt requirements for security futures products. (a) For the... exchange or national securities association that lists the security. (3) Regulatory halt means a...

  5. 17 CFR 240.6h-1 - Settlement and regulatory halt requirements for security futures products.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 17 Commodity and Securities Exchanges 3 2013-04-01 2013-04-01 false Settlement and regulatory halt... § 240.6h-1 Settlement and regulatory halt requirements for security futures products. (a) For the... exchange or national securities association that lists the security. (3) Regulatory halt means a...

  6. Microstructural and superconducting properties of C6H6 added bulk MgB2 superconductor

    NASA Astrophysics Data System (ADS)

    Babaoğlu, Meral G.; Safran, Serap; Çiçek, Özlem; Ağıl, Hasan; Ertekin, Ercan; Hossain, Md. Shahriar A.; Yanmaz, Ekrem; Gencer, Ali

    2012-10-01

    The effect of aromatic hydrocarbon (benzene, C6H6) addition on lattice parameters, microstructure, critical temperature (Tc), critical current density (Jc) of bulk MgB2 has been studied. In this work only 2 mol% C6H6 addition was found to be very effective in increasing the Jc values, while resulting in slight reduction of the Tc. Jc values of 2 mol% C6H6 added MgB2 bulks reached to 1.83×106 A/cm2 at 15 K and 0 T. Microstructural analyses suggest that Jc enhancement is associated with the substitution of carbon with boron and which also results in the smaller MgB2 grain size. The change in the lattice parameters or the lattice disorder is claimed as a cause of the slight reduction in the Tc by carbon addition. We note that our results show the advantages of C6H6 addition include homogeneous mixing of precursor powders, avoidance of expansive nanoadditives, production of highly reactive C, and significant enhancement in Jc of MgB2, compared to un-doped samples.

  7. Biomorphous SiC ceramics prepared from cork oak as precursor

    NASA Astrophysics Data System (ADS)

    Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

    2016-04-01

    Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:С:Si, SiC:С, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

  8. The decoupling of epitaxial graphene on SiC by hydrogen intercalation: an ab initio study

    NASA Astrophysics Data System (ADS)

    Nemec, Lydia; Rinke, Patrick; Blum, Volker; Scheffler, Matthias

    2015-03-01

    Large-scale ordered epitaxial graphene can be grown on various substrates, out of which silicon carbide (SiC) is one of the most promising. The exact material properties of graphene depend on the growth conditions and its interaction with the substrate. By hydrogen intercalation of epitaxial graphene on the Si-face of SiC the graphene layer decouples from the substrate forming quasi-free-standing monolayer graphene (QFMLG). We performed an density functional theory study of QFMLG on the polar 6H-SiC(0001) surface based on a van der Waals corrected semi-local exchange-correlation functional using the all-electron numeric atom-centered basis function code FHI-aims. We find an adsorption height in excellent agreement with X-ray standing wave experiments, a very low buckling of the graphene layer, and a very homogeneous electron density at the interface. All these features improve the electronic properties of QFMLG compared to epitaxial graphene. Using the insight gleaned on the Si-face, we present the structure of a hypothetical QFMLG phase on the C-face of SiC. We find that hydrogen intercalation is a promising option to control the SiC-graphene interface.

  9. Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction

    SciTech Connect

    K Stone; D Turner; M Singh; T Vaid; P Stephens

    2011-12-31

    The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

  10. Fully self-consistent calculations of momentum distributions of annihilating electron-positron pairs in SiC

    NASA Astrophysics Data System (ADS)

    Wiktor, Julia; Jomard, Gérald; Torrent, Marc; Barthe, Marie-France; Bertolus, Marjorie

    2016-05-01

    We performed calculations of momentum distributions of annihilating electron-positron pairs in various fully relaxed vacancy defects in SiC. We used self-consistent two-component density functional theory schemes to find the electronic and positronic densities and wave functions in the considered systems. Using the one-dimensional momentum distributions (Doppler-broadened annihilation radiation line shapes) we calculated the line-shape parameters S and W . We emphasize the effect of the experimental resolution and the choice of the integration ranges for the S and W parameters on the distributions of the points corresponding to different defects in the S (W ) plot. We performed calculation for two polytypes of SiC, 3 C , and 6 H and showed that for silicon vacancies and clusters containing this defect there were no significant differences between the Doppler spectra. The results of the Doppler spectra calculations were compared with experimental data obtained for n -type 6 H -SiC samples irradiated with 4-MeV Au ions. We observed a good general agreement between the measured and calculated points.

  11. Cryogenic Performance of Trex SiC Mirror

    NASA Technical Reports Server (NTRS)

    Foss, Colby; Kane, Dave; Bray, Donald; Hadaway, James

    2005-01-01

    Low cost, high performance lightweight Silicon Carbide (Sic) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter lightweight Sic mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance. CVC Sic is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD Sic. NASA has funded lightweight optical materials technology development efforts involving Sic mirrors for future space based telescope programs. As part of these efforts, a Trex Sic was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the test instrumentation, test results, and lessons learned.

  12. From nanographene to monolayer graphene on 6H-SiC(0001) substrate

    NASA Astrophysics Data System (ADS)

    Ouerghi, A.; Ridene, M.; Mathieu, C.; Gogneau, N.; Belkhou, R.

    2013-06-01

    Graphene quantum dots, nanoribbons, and nanographene are great promising in various applications owing to the quantum confinement and edge effects. Here we evidence the presence of epitaxial nanographene on SiC. Morphology and electronic structure of the graphene layers have been analyzed by SPELEEM. Using Scanning Tunneling Microscopy, we show that the increase of relative number of clusters carbon enabled the observation of nanographene, the diameter of which was around 20 nm. This nanographene shows a honeycomb structure at atomic level. The local chemical and electronic properties of the sample have been determined by photoelectron spectroscopy using synchrotron radiation.

  13. Tuning Chelation by the Surfactant-Like Peptide A6H Using Predetermined pH Values

    PubMed Central

    2013-01-01

    We examine the self-assembly of a peptide A6H comprising a hexa-alanine sequence A6 with a histidine (H) “head group”, which chelates Zn2+ cations. We study the self-assembly of A6H and binding of Zn2+ ions in ZnCl2 solutions, under acidic and neutral conditions. A6H self-assembles into nanotapes held together by a β-sheet structure in acidic aqueous solutions. By dissolving A6H in acidic ZnCl2 solutions, the carbonyl oxygen atoms in A6H chelate the Zn2+ ions and allow for β-sheet formation at lower concentrations, consequently reducing the onset concentration for nanotape formation. A6H mixed with water or ZnCl2 solutions under neutral conditions produces short sheets or pseudocrystalline tapes, respectively. The imidazole ring of A6H chelates Zn2+ ions in neutral solutions. The internal structure of nanosheets and pseudocrystalline sheets in neutral solutions is similar to the internal structure of A6H nanotapes in acidic solutions. Our results show that it is possible to induce dramatic changes in the self-assembly and chelation sites of A6H by changing the pH of the solution. However, it is likely that the amphiphilic nature of A6H determines the internal structure of the self-assembled aggregates independent from changes in chelation. PMID:24369761

  14. Analysis of Ground-State Zero-Field Splitting for Mn2+ in ZnNbOF5·6(H2O) and CoNbOF5·6(H2O)

    NASA Astrophysics Data System (ADS)

    Li, Ju-Fen; Kuang, Xiao-Yu

    2011-06-01

    The electron paramagnetic resonance spectra of trigonal Mn2+ centers in ZnNbOF5·6(H2O) and CoNbOF5·6(H2O) crystals are studied on the basis of the complete energy matrices for a d5 configuration ion in a trigonal ligand field. It is demonstrated that the local lattice structure around a trigonal Mn2+ center has an elongation distortion along the crystalline c3 axis, and when Mn2+ is doped in the ZnNbOF5·6(H2O) and CoNbOF5·6(H2O) crystals, there is a similar local distortion. From the EPR calculation, the local lattice structure parameters for trigonal Mn2+ centers in ZnNbOF5·6(H2O) and CoNbOF5·6(H2O) are determined.

  15. Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes

    SciTech Connect

    Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

    2010-08-04

    Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

  16. PCl3-C6H6 heterodimers: evidence for Pπ phosphorus bonding at low temperatures.

    PubMed

    Ramanathan, N; Sankaran, K; Sundararajan, K

    2016-07-28

    A phosphorous trichloride (PCl3)-benzene (C6H6) heterodimer was generated in a low temperature N2 matrix and was characterized using infrared spectroscopy. The structure of the heterodimer produced in the matrix isolation experiment was discerned through ab initio computations. Computations disclosed that the experimentally detected dimer is stabilized through strong non-covalent phosphorus bonded Pπ interaction, considered as a class of pnicogen bonding. This experimentally unmapped Pπ interaction so far has been reconnoitered using atoms in molecules and natural bond orbital and energy decomposition analyses. The influence of substitutions on both the PCl3 and C6H6 monomeric units of the heterodimer was subsequently examined to understand the strength of Pπ interaction as a result of these substitutions. PMID:27374927

  17. Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices

    NASA Technical Reports Server (NTRS)

    Cho, Pak S.; Goldhar, Julius; Lee, Chi H.; Saddow, Stephen E.; Neudeck, Philip

    1995-01-01

    The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.

  18. NQRS Data for F6H12MgO6Si (Subst. No. 2195)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume B 'Substances Containing C10H16 … Zn' of Volume 48 'Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III 'Condensed Matter'. It contains an extract of Section '3.2 Data tables' of the Chapter '3 Nuclear quadrupole resonance data' providing the NQRS data for F6H12MgO6Si (Subst. No. 2195)

  19. Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD

    SciTech Connect

    Sarney, W.L.; Salamanca-Riba, L.; Zhou, P.; Spencer, M.G.; Taylor, C.; Sharma, R.P.; Jones, K.A.

    1999-07-01

    SiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. The authors added Ge in the form of GeH{sub 2} to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1,000 C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH{sub 2} flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

  20. Electronic transitions of C6H4+ isomers: neon matrix and theoretical studies.

    PubMed

    Fulara, Jan; Nagy, Adam; Filipkowski, Karol; Thimmakondu, Venkatesan S; Stanton, John F; Maier, John P

    2013-12-19

    Three open-chain isomers of C6H4(+) and two cyclic ones were detected following mass-selective trapping in 6 K neon matrixes. The open-chain cations 5-hexene-1,3-diyne (CH2═CH-CC-CC-H)(+) and cis- (cis-HCC-CH═CH-CCH)(+) and trans-3-hexene-1,5-diyne (trans-HCC-CH═CH-CCH)(+), possess two absorption systems commencing at 609 and 373, 622 and 385, and 585 and 373 nm, respectively. They are assigned to the 1 (2)A" and 2 (2)A" ← X (2)A", 1(2)A2 and 2 (2)A2 ← X (2)B1, and 1 (2)Bg and 2 (2)B(g) ← X (2)A(u) electronic transitions of these cations. Two overlapping systems are detected at around 420 nm and tentatively assigned to the 1 (2)A" ← X (2)A" electronic transitions of propargyl cyclopropene and 2 (2)B1 ← X (2)A2 of o-benzyne cation structures. The assignment of the electronic transitions is based on theoretical vertical excitation energies calculated with CASPT2 and EOMEE-CCSDT methods for 12 isomers of C6H4(+). These have been carried out at the geometries optimized using several ab initio methods. Adiabatic excitation energies were calculated for the five identified isomers of C6H4(+). PMID:24074188

  1. Density functional study of adenine tetrads with N6-H6...N3 hydrogen bonds.

    PubMed

    Meyer, Michael; Sühnel, Jürgen

    2008-05-01

    The structure and energy of A-tetrads with N6-H6...N3 H-bonds was studied using B3LYP and BH&H density functional theory. The planar A-tetrad with C(4h) symmetry is more stable than the nonplanar structures at C4 and S4 symmetry. This structure corresponds to a local energy minimum. The energies of the structures with N6-H6...N1 and N6-H6...N7 H-bonds studied previously are of similar magnitude. Structures of A-tetrad complexes with sodium and potassium were most stable at S4 symmetry, and similarly, sandwich complexes consisting of two tetrads and a single cation were most stable at S8 symmetry. Relative energies of sandwich complexes with different symmetries obtained with the B3LYP and BH&H methods were quite different. BH&H overestimates the interaction energies between hydrogen-bonded neighbor bases relative to B3LYP. PMID:18380490

  2. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer

    SciTech Connect

    Kubler, L.; Dentel, D.; Bischoff, J.-L.; Derivaz, M.; Aiet-Mansour, K.; Diani, M.

    2005-09-15

    High temperature annealing of 4H- or 6H-SiC(0001) crystals is well known to desorb Si from the surface and to generate a C-rich (6{radical}3x6{radical}3)R30 deg. (6{radical}3) reconstruction explained as a graphite monolayer in heteroepitaxial registry with the substrate. Ge deposition at room temperature and in the monolayer range on this graphitized reconstruction results in Ge islands. Using a number of surface techniques, we follow subsequent Ge morphology evolutions as a function of isochronal post-annealing treatments at increasing temperatures. In a particular temperature window Ge reacts with the substrate by diffusion under the graphite planes and wets the Si-terminated SiC surface. In spite of this bidimensional insertion of a Ge layer, the epitaxial relationship between the SiC substrate and the graphite is maintained as shown by very clear graphite-(1x1) LEED or RHEED patterns. They denote extended and well-ordered graphite planes at the surface of a graphite/Ge/SiC heterostructure. XPS analyses reveal a complete passivation of the intercalated Ge layer against oxidation by the overlying graphite sheets. Moreover, drastic spectroscopic changes on the bulk-SiC Si 2p and C 1s core levels are observed, depending on whether graphite(6{radical}3)/SiC or graphite(1x1)/Ge/SiC terminations are analyzed. In the latter case, the observed core level splitting of the bulk components is interpreted by a significant upward band bending ({approx}1.2 eV) of the n-doped SiC, making this second interface to act as a Schottky barrier. Above 1300 deg. C, a delayed Ge desorption takes place that allows the graphite sheets to re-form in their initial 6{radical}3 form, i.e., without Ge and with flatter bands.

  3. Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Liang, Hongwei; Tao, Pengcheng; Xia, Xiaochuan; Chen, Yuanpeng; Zhang, Kexiong; Liu, Yang; Shen, Rensheng; Luo, Yingmin; Zhang, Yuantao; Du, Guotong

    2016-03-01

    Vertically conducting deep-ultraviolet (DUV) light-emitting diodes (LEDs) with a polarization-induced backward-tunneling junction (PIBTJ) were grown by metal-organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was applied to simulate the PIBTJ structure, energy band diagrams, and free-carrier concentration distribution. AlN and graded AlxGa1-xN interlayers were introduced between the PIBTJ and multiple quantum well layers to avoid cracking of the n-Al0.5Ga0.5N top layer. At a driving current of 20 mA, an intense DUV emission at ˜288 nm and a weak shoulder at ˜386 nm were observed from the AlGaN top layer side. This demonstrates that the PIBTJ can be used to fabricate vertically conducting DUV LED on SiC substrates.

  4. Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

    NASA Technical Reports Server (NTRS)

    Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.; Larkin, David (Technical Monitor)

    2001-01-01

    Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

  5. Solute embrittlement of SiC

    NASA Astrophysics Data System (ADS)

    Enrique, Raúl A.; Van der Ven, Anton

    2014-09-01

    The energies and stresses associated with the decohesion of β-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  6. Solute embrittlement of SiC

    SciTech Connect

    Enrique, Raúl A.; Van der Ven, Anton

    2014-09-21

    The energies and stresses associated with the decohesion of β-SiC in the presence of mobile Pd and Ag impurities are studied from first principles. Density functional theory calculations are parameterized with a generalized cohesive zone model and are analyzed within a thermodynamic framework that accounts for realistic boundary conditions in the presence of mobile impurities. We find that Pd impurities will embrittle SiC when Pd is in equilibrium with metallic Pd precipitates. Our thermodynamic analysis predicts that Pd embrittles SiC by substantially reducing the maximum stress of decohesion as a result of a phase transition between decohering planes involving an influx of Pd atoms. The methods presented in this work can be applied to study the thermodynamics of decohesion of SiC in other aggressive environments containing oxygen and water, for example, and yield environment dependent cohesive zone models for use in continuum approaches to study crack propagation and fracture.

  7. Dynamics of reactions O((1)D)+C(6)H(6) and C(6)D(6).

    PubMed

    Chen, Hui-Fen; Liang, Chi-Wei; Lin, Jim J; Lee, Yuan-Pern; Ogilvie, J F; Xu, Z F; Lin, M C

    2008-11-01

    The reaction between O((1)D) and C(6)H(6) (or C(6)D(6)) was investigated with crossed-molecular-beam reactive scattering and time-resolved Fourier-transform infrared spectroscopy. From the crossed-molecular-beam experiments, four product channels were identified. The major channel is the formation of three fragments CO+C(5)H(5)+H; the channels for formation of C(5)H(6)+CO and C(6)H(5)O+H from O((1)D)+C(6)H(6) and OD+C(6)D(5) from O((1)D)+C(6)D(6) are minor. The angular distributions for the formation of CO and H indicate a mechanism involving a long-lived collision complex. Rotationally resolved infrared emission spectra of CO (16)H(6) and [CO]/[OD]>2.9 for O((1)D)+C(6)D(6) is consistent with the expectation for an abstraction reaction. The mechanism of the reaction may be understood from considering the energetics of the intermediate species and transition states calculated at the G2M(CC5) level of theory for the O((1)D)+C(6)H(6) reaction. The experimentally observed branching ratios and deuterium isotope effect are consistent with those predicted from calculations. PMID:19045343

  8. Stacking faults in SiC nanowires.

    PubMed

    Wallis, K L; Wieligor, M; Zerda, T W; Stelmakh, S; Gierlotka, S; Palosz, B

    2008-07-01

    SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 degrees C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires. PMID:19051903

  9. Examples of conditional SIC-POVMs

    NASA Astrophysics Data System (ADS)

    Ohno, Hiromichi; Petz, Dénes

    2015-10-01

    The state of a quantum system is a density matrix with several parameters. The concern herein is how to recover the parameters. Several possibilities exist for the optimal recovery method, and we consider some special cases. We assume that a few parameters are known and that the others are to be recovered. The optimal positive-operator-valued measure (POVM) for recovering unknown parameters with an additional condition is called a conditional symmetric informationally complete POVM (SIC-POVM). In this paper, we study the existence or nonexistence of conditional SIC-POVMs. We provide a necessary condition for existence and some examples.

  10. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  11. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1967-01-01

    This illustration shows a cutaway drawing with callouts of the major components for the S-IC (first) stage of the Saturn V launch vehicle. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through five F-1 engines powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimball for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  12. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1968-01-01

    This is a cutaway view of the Saturn V first stage, known as the S-IC, detailing the five F-1 engines and fuel cells. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through the five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  13. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This cutaway illustration shows the Saturn V S-IC (first) stage with detailed callouts of the components. The S-IC Stage is 138 feet long and 33 feet in diameter, producing 7,500,000 pounds of thrust through five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  14. S-IC Static Test Stand

    NASA Technical Reports Server (NTRS)

    1977-01-01

    Constructed in 1964, the S-IC Static Test Stand was designed to develop and test the first stage (S-IC) of the Saturn V launch vehicle. In the 1974 the test stand was modified to test the liquid hydrogen tank on the Space Shuttle External Tank. The facility was again modified in 1986 and its name was changed to the Advanced Engine Test Facility. These modifications were made to accommodate the Technology Test Bed engine which is a derivative of the Space Shuttle Main Engine.

  15. Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates

    NASA Astrophysics Data System (ADS)

    Chen, Hui

    B12As2 possesses the extraordinary properties, such as wide bandgap of 3.47eV and unique 'self heal' ability from electron irradiation damage, which make it attractive for the applications in space electronics, high temperature semiconductors and in particular, beta cells, devices capable of producing electrical energy by coupling a radioactive beta emitter to a semiconductor junction. Due to the absence of native substrates, B12As2 has been grown on substrates with compatible structural parameters via chemical vapor deposition. To date, growth on Si with (100), (110) and (111) orientation and (0001) 6H-SiC has been attempted. However, structural variants, including rotational and translational variants, have been observed in the epilayers and are expected to have a detrimental effect on device performance which has severely hindered progress of this material to date. In addition, none of the earlier reports provide a detailed atomic level study of defect structures in the films and growth mechanisms remain obscure. The focus of this thesis is to study defect structures in B12As2 films grown on different SiC substrates using synchrotron x-ray topography, high resolution transmission microscopy as well as other characterization techniques. The goals of the studies are to understand the generations of the defects present in B12As 2 films and their growth mechanisms so as to develop strategies to reduce defect densities and obtain better film quality for future device fabrication. The following detailed studies have been carried out: (1) The microstructures in B12As2 epitaxial layers grown on on-axis c-plane (0001) 6H-SiC substrates were analyzed in detail. Synchrotron white beam X-ray topography (SWBXT) and scanning electron microscopy (SEM) revealed a mosaic structure consisting of a solid solution of twin and matrix epilayer domains. The epitaxial relationship was determined to be (0001)B12As2<112¯0> B12As2||(0001)6H-SiC<112¯0>6H-SiC. B 12As2 twinned domains were

  16. First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction

    NASA Astrophysics Data System (ADS)

    He, Xiao-Min; Chen, Zhi-Ming; Huang, Lei; Li, Lian-Bi

    2015-10-01

    Combining advanced transmission electron microscopy with high-precision first-principles calculations, the properties of Si(111)//6H-SiC(0001) (Si-terminated and C-terminated) heterojunction interface, such as work of adhesion, geometry property, electronic structure and bonding nature, are studied. The experiments have demonstrated that interfacial orientation relationships of Si(111)//6H-SiC(0001) heterojunction are Si[2-1-1]/6H-SiC[101¯0] and Si(111)/6H-SiC(0001). Compared with C-terminated interface, Si-terminated interface has higher adhesion and less relaxation extent.

  17. Multihormonal regulation of thyroglobulin production by the OVNIS 6H thyroid cell line.

    PubMed

    Aouani, A; Hovsépian, S; Fayet, G

    1988-02-01

    The hormonal regulation of thyroglobulin production has been studied using a clone of the ovine thyroid cell line: OVNIS 6H. 3 among the 6 hormones proposed for serum replacement are required for an optimal thyroglobulin production; insulin, hydrocortisone and thyrotropin. Insulin alone stimulates thyroglobulin production. The presence of insulin is also required to observe hydrocortisone and TSH stimulations. Newborn calf serum inhibits thyroglobulin production. The best conditions for optimal thyroglobulin expression and TSH responsiveness are obtained in serum-free medium supplemented with 5 micrograms/ml insulin, 100 nM hydrocortisone and 1 mU/ml TSH. PMID:3286455

  18. Si growth at graphene surfaces on 6H-SiC(0001) substrates

    NASA Astrophysics Data System (ADS)

    Sone, Junki; Yamagami, Tsuyoshi; Nakatsuji, Kan; Hirayama, Hiroyuki

    2016-03-01

    We studied the growth of Si at the surface of epitaxial graphene on 6H-SiC(0001). Characteristic flower-like islands with a thickness of 2 to 3 nm nucleated during the growth from 290 to 420 K. The islands became featureless in growth at higher temperatures. The growth was predominantly governed by diffusion-limited aggregation. The diffusion energy was evaluated to be 0.21 eV from the temperature-dependent decrease in the density of the islands.

  19. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  20. Universal Converter Using SiC

    SciTech Connect

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  1. Passive SiC irradiation temperature monitor

    SciTech Connect

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  2. Synthesis and characterization of SiC and SiC/Si3N4 composite nano powders from waste material.

    PubMed

    Zawrah, M F; Zayed, M A; Ali, Moustafa R K

    2012-08-15

    In the present work, nano silicon carbide has been prepared by pyrolysis of rice-husk ashes as starting materials. Three rice-husk ash samples having different features were used. The first was coarse-grained rice husk ash (fired husk as is), the second was fine rice husk ash (hand-ground), while the third was ball milled one. Effect of ball milling of the starting ashes for 6h on the formation of nano SiC was investigated and compared with those prepared without milling. The particle sizes of the prepared SiC materials were affected by the milling process. The particle sizes of the obtained nano SiC from ball milled staring materials were smaller than those prepared without milling. The pyrolysis conditions, i.e. the temperature and atmosphere were optimized. The optimum firing temperature to obtain well crystalline nano SiC was 1550°C. The effect of pyrolysis atmosphere, i.e. argon, vacuum and nitrogen was also demonstrated. The pyrolysis in argon exhibited lower efficiency on the formation of SiC than vacuum; while the pyrolysis in nitrogen atmosphere led to formation of SiC/Si(3)N(4) nanocomposite. PMID:22673059

  3. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  4. Design of Twin Structures in SiC Nanowires

    SciTech Connect

    Yongfeng Zhang; Hanchen Huang

    2012-11-01

    With covalent bonding, SiC has high mechanical strength and a large energy gap in electronic band structure. Nanoscale SiC, in the form of nanowires, has increased mechanical toughness and variable band gaps. Further, introduction of twin boundaries into cubic SiC nanowires can result in improvement in both mechanical and electronic properties. This review presents effects of twin boundaries on properties of cubic SiC nanowires, including mechanical and electronic properties. Further, this review presents recent developments in introducing twin boundaries into cubic SiC nanowires, controllably and uncontrollably.

  5. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  6. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  7. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.5560 Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz...

  8. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.5560 Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz...

  9. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... SIGNIFICANT NEW USES OF CHEMICAL SUBSTANCES Significant New Uses for Specific Chemical Substances § 721.5560 Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz...

  10. S-IC Test Stand Design Model

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo is of the S-IC test stand design model created prior to construction.

  11. S-IC Test Stand Design Model

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo is of the S-IC test stand design model.

  12. Infrared spectra of meteoritic SiC grains

    NASA Astrophysics Data System (ADS)

    Andersen, A. C.; Jäger, C.; Mutschke, H.; Braatz, A.; Clément, D.; Henning, Th.; Jørgensen, U. G.; Ott, U.

    1999-03-01

    We present here the first infrared spectra of meteoritic SiC grains. The mid-infrared transmission spectra of meteoritic SiC grains isolated from the Murchison meteorite were measured in the wavelength range 2.5-16.5 mu m, in order to make available the optical properties of presolar SiC grains. These grains are most likely stellar condensates with an origin predominately in carbon stars. Measurements were performed on two different extractions of presolar SiC from the Murchison meteorite. The two samples show very different spectral appearance due to different grain size distributions. The spectral feature of the smaller meteoritic SiC grains is a relatively broad absorption band found between the longitudinal and transverse lattice vibration modes around 11.3 mu m, supporting the current interpretation about the presence of SiC grains in carbon stars. In contrast to this, the spectral feature of the large (> 5 mu m) grains has an extinction minimum around 10 mu m. The obtained spectra are compared with commercially available SiC grains and the differences are discussed. This comparison shows that the crystal structure (e.g., beta -SiC versus alpha -SiC) of SiC grains plays a minor role on the optical signature of SiC grains compared to e.g. grain size.

  13. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  14. Synthesis of SiC nanorods from bleached wood pulp

    SciTech Connect

    Shin, Yongsoon; Wang, Chong M.; Samuels, William D.; Exarhos, Gregory J.

    2007-05-01

    Unbleached and bleached soft wood pulps have been used as templates and carbon precursors to produce SiC nanorods. Hydrolyzed tetraethylorthosilicate (TEOS), Silicic acid was infiltrated into the pulps followed by a carbothermal reduction to form SiC nanorods at 1400oC in Ar. Residual carbon formed along with SiC was removed by gasification at 700oC in air. The SiC materials prepared from unbleached pulp were non-uniform SiC with a thick SiO2 coating, while the SiC nanorods prepared from the bleached pulp were uniform and straight with dimensions of 250 nm in diameter and 5.0 mm long. The formation of uniform camelback structure of SiC in the reaction between silica and bleached pulp is attributed to more silica deposited in the amorphous region of cellulose.

  15. Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC.

    PubMed

    Dietmueller, Roland; Nesswetter, Helmut; Schoell, Sebastian J; Sharp, Ian D; Stutzmann, Martin

    2011-11-01

    The exact band alignment at organic/inorganic semiconductor heterojunctions is influenced by a variety of properties and is difficult to predict. For organic/inorganic bilayer heterojunctions made of poly(3-hexylthiophene) (P3HT) and n-type 6H-SiC, the band alignment is determined via current-voltage measurements. For this purpose, a model equivalent circuit, combining thermionic emission and space-charge-limited current effects, is proposed which describes the behavior of the heterojunction very well. From the fitting parameters, an interface barrier height of 1.1 eV between the lowest unoccupied molecular orbital (LUMO) of P3HT and the conduction band (CB) of 6H-SiC is determined. In addition, from the maximum open circuit voltage of 6H-SiC/P3HT diodes, a difference of 0.9 eV between the highest occupied molecular orbital (HOMO) of P3HT and the CB of 6H-SiC is deduced. These two values determine the alignment of the energy bands of 6H-SiC relative to the HOMO and LUMO of P3HT. The 6H-SiC/P3HT bilayer heterojunction exhibits an open circuit voltage of ~0.5 V at room temperature, which makes such a materials system a potential candidate for bulk heterojunction hybrid solar cells with 6H-SiC nanoparticles. PMID:21936559

  16. Study of silicon carbide (SiC) polytype heterojunctions

    NASA Astrophysics Data System (ADS)

    Eshun, Ebenezer Emmanuel

    2001-12-01

    . Saturation currents of 8.2 and 18.75 mA were achieved with transconductances of 9.22 and 21.4 mS/mm for two device dimensions with aspect ratios of 24 and 33 respectively. Carrier mobility as high as 700 cm2/V-s has been achieved, which is close to the reported Hall mobilities for 3C-SiC (770 cm2/V-s). The saturation drift velocity obtained (1.9 x 107 cm/s) is also close to theoretical values. By using transmission line model measurements, Ni based ohmic contacts to this material has been calculated to be ˜5 x 10-5 O-cm2, which is two orders of magnitude lower than Ni based ohmic contacts to 6H-SiC at the same doping level.

  17. Band gap states of V and Cr in 6H-silicon carbide

    NASA Astrophysics Data System (ADS)

    Achtziger, N.; Grillenberger, J.; Witthuhn, W.

    Band gap states of Ti, V and Cr in n-type 6H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes 48V and 51Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements during the elemental transmutation of these isotopes to 48Ti and 51V respectively revealed the corresponding concentration changes of band gap states. Thus, three levels were identified in the band gap: a Cr level at 0.54 eV and two V levels at 0.71 and 0.75 eV below the conduction band edge. There are no deep levels of Ti in the upper part of the band gap.

  18. Sodium dipotassium citrate, NaK2C6H5O7.

    PubMed

    Rammohan, Alagappa; Kaduk, James A

    2016-03-01

    The crystal structure of sodium dipotassium citrate, Na(+)·2K(+)·C6H5O7 (3-), has been solved and refined using laboratory X-ray powder diffraction data, and optimized using density functional techniques. The Na(+) and one of the K(+) cations are six-coordinate, with bond-valence sums of 1.13 and 0.92 valence units, respectively, while another crystallographically independent K(+) cation is seven-coordinate with a bond-valence sum of 1.20. The [KO6] and [KO7] polyhedra share edges and corners to form layers perpendicular to the b axis. The distorted [NaO6] octa-hedra share edges to form chains along the a axis. The result is a three-dimensional network. The only O-H⋯O hydrogen bond is an intra-molecular one between the hy-droxy group and a terminal carboxyl-ate group. PMID:27006817

  19. Rapid thermal annealing of ion implanted 6H-SiC by microwave processing

    SciTech Connect

    Gardner, J.A.; Rao, M.V.; Tian, Y.L.; Holland, O.W.; Roth, E.G.; Chi, P.H.; Ahmad, I.

    1997-03-01

    Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200{degree}C/min vs 10{degree}C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700{degree}C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference in cycle time. 19 refs., 7 figs., 3 tabs.

  20. Structures, molecular orbitals and UV-vis spectra investigations on Br2C6H4: a computational study.

    PubMed

    Wang, Tsang-Hsiu; Hsu, Chen-Shuo; Huang, Wen-Lin; Lo, Yih-Hsing

    2013-11-01

    The dibromobenzenes (1,2-, 1,3- and 1,4-Br2C6H4) have been studied by theoretical methods. The structures of these species are optimized and the structural characteristics are determined by density functional theory (DFT) and the second order Møller-Plesset perturbation theory (MP2) levels. The geometrical structures of Br2C6H4 show a little distortion of benzene ring due to the substitution of highly electronegativity of bromine atoms. The electronegativity of bromine atoms in 1,4-Br2C6H4 is predicted to be more negative than 1,2- and 1,3-Br2C6H4. In addition, dipole moment and frontier molecular orbitals (FMOs) of these Br2C6H4 are performed as well. The 1,4-Br2C6H4 is slightly more reactive than 1,2- and 1,3-Br2C6H4 because of its small HOMO-LUMO energy gap. The simulated UV-vis spectra are investigated by time-dependent density functional theory (TD-DFT) approach, which are in excellent agreement with the available experimental value. Our calculations show that a few of absorption features are between 140nm and 250nm, which is in ultraviolet C range, and the red shift of 1,3- and 1,4-Br2C6H4 are predicted. Moreover, the UV absorption features of these Br2C6H4 in water or methanol are predicted to be more intense than in gas phase due to solvent effect. PMID:23892349

  1. Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

    1996-01-01

    Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

  2. Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian; Parsons, James D.

    1996-01-01

    SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

  3. Theoretical studies of the structure and stability of (Ag(C 6H 6) n+ ( n = 1 and 2)

    NASA Astrophysics Data System (ADS)

    Ma, N. L.; Ng, K. M.; Tsang, C. W.

    1997-10-01

    Ab initio molecular orbital techniques are used to probe the structure and stability of Ag(C 6H 6) + and Ag(C 6H 6) 2+ recently observed in electrospray ionization mass spectra. Of all the Ag(C 6H 6) + structures investigated, the C 6v complex is the most stable. Our calculated first binding energy of benzene to Ag + is in agreement with the experimental value and the second binding enegy of benzene to Ag + is estimated to be 114 (10) kJ mol -1.

  4. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  5. Tensile strength of SiC fibers

    SciTech Connect

    Zok, F.W.; Chen, X.; Weber, C.H.

    1995-07-01

    An experimental investigation has been conducted on the effects of gauge length on the tensile strength of SiC fibers. The results show that the overall strength distribution cannot be described solely in terms of the two-parameter Weibull function. The overall distribution is found to be consistent with two concurrent flaw populations, one of them being characteristic of the pristine fibers, and the other characteristic of the additional flaws introduced into the fiber during processing of the composite.

  6. Periodically twinned SiC nanowires.

    PubMed

    Wang, Dong-Hua; Xu, Di; Wang, Qing; Hao, Ya-Juan; Jin, Guo-Qiang; Guo, Xiang-Yun; Tu, K N

    2008-05-28

    Twinning has been recognized to be an important microstructural defect in nanoscale materials. Periodically twinned SiC nanowires were largely synthesized by the carbothermal reduction of a carbonaceous silica xerogel prepared from tetraethoxysilane and biphenyl with iron nitrate as an additive. The twinned β-SiC nanowires, with a hexagonal cross section, a diameter of 50-300 nm and a length of tens to hundreds of micrometers, feature a zigzag arrangement of periodically twinned segments with a rather uniform thickness along the entire growth length. Computer simulation has been used to generate three-dimensional atomic structures of the zigzag columnar twin structure by the stacking of hexagonal discs of {111} planes of SiC. A minimum surface energy and strain energy argument is proposed to explain the formation of periodic twins in the SiC nanowires. The thickness of the periodic twinned segments is found to be linearly proportional to the nanowire diameter, and a constant volume model is proposed to explain the relation. PMID:21730575

  7. Silicon vacancy center in 4 H -SiC: Electronic structure and spin-photon interfaces

    NASA Astrophysics Data System (ADS)

    Soykal, Ö. O.; Dev, Pratibha; Economou, Sophia E.

    2016-02-01

    Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multiparticle symmetry-adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spin-spin interactions on these states. Although we focused on VSi- in 4 H -SiC because of its unique fine structure due to the odd number of active electrons, our methods can be easily applied to other defect centers of different polytypes, especially to the 6 H -SiC. Based on these results, we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero-field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward quantum information and quantum metrology applications with silicon carbide.

  8. Gas Sensing Diode Comprising SiC

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2001-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

  9. Growth optimization and applicability of thick on-axis SiC layers using sublimation epitaxy in vacuum

    NASA Astrophysics Data System (ADS)

    Jokubavicius, Valdas; Sun, Jianwu; Liu, Xinyu; Yazdi, Gholamreza; Ivanov, Ivan. G.; Yakimova, Rositsa; Syväjärvi, Mikael

    2016-08-01

    We demonstrate growth of thick SiC layers (100-200 μm) on nominally on-axis hexagonal substrates using sublimation epitaxy in vacuum (10-5 mbar) at temperatures varying from 1700 to 1975 °C with growth rates up to 270 μm/h and 70 μm/h for 6H- and 4H-SiC, respectively. The stability of hexagonal polytypes are related to process growth parameters and temperature profile which can be engineered using different thermal insulation materials and adjustment of the induction coil position with respect to the graphite crucible. We show that there exists a range of growth rates for which single-hexagonal polytype free of foreign polytype inclusions can be maintained. Further on, foreign polytypes like 3C-SiC can be stabilized by moving out of the process window. The applicability of on-axis growth is demonstrated by growing a 200 μm thick homoepitaxial 6H-SiC layer co-doped with nitrogen and boron in a range of 1018 cm-3 at a growth rate of about 270 μm/h. Such layers are of interest as a near UV to visible light converters in a monolithic white light emitting diode concept, where subsequent nitride-stack growth benefits from the on-axis orientation of the SiC layer.

  10. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate

    SciTech Connect

    Shustov, D. B.; Lebedev, A. A. Lebedev, S. P.; Nelson, D. K.; Sitnikova, A. A.; Zamoryanskaya, M. V.

    2013-09-15

    n-3C-SiC/n-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 {mu}m. Varying the growth conditions changes the concentration of various types of defects.

  11. Direct current conduction in SiC powders

    NASA Astrophysics Data System (ADS)

    Mârtensson, E.; Gäfvert, U.; Lindefelt, U.

    2001-09-01

    Silicon carbide (SiC) powder is used in nonlinear field grading materials. The composite material, consisting of an insulating polymer matrix filled with the SiC-grains, is usually a percolated system with established conducting paths. In order to explain the properties, the electrical characteristic and conduction mechanisms of the SiC powder itself are of interest. SiC powders have been studied by current-voltage measurements and the influences of grain size and doping have been investigated. The macroscopic current characteristics of green and black SiC powders can be described by the transport mechanisms at the grain contacts, which can be modeled by Schottky-like barriers. The SiC is heavily doped and tunneling by field emission is the dominating conduction mechanism over the major part of the nonlinear voltage range. It is suggested that preavalanche multiplication influences the current at the highest voltages, especially for p-type black SiC.

  12. SiC nanowires synthesized from graphene and silicon vapors

    NASA Astrophysics Data System (ADS)

    Weichenpei, Luo; Gong-yi, Li; Zengyong, Chu; Tianjiao, Hu; Xiaodong, Li; Xuefei, Zhang

    2016-04-01

    The preparation of silicon carbide (SiC) nanowires is basically important for its potential applications in nanodevices, nanocomposites, etc. In the present work, a simple route was reported to synthesize SiC nanowires by heating commercial graphene with silicon vapors and no catalyst. Characterization by scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, electron energy scattering, X-ray diffraction, and Raman dispersive spectrum demonstrates the products are composed of β-SiC crystal. The SiC nanowires have the average diameter of about 50 nm and length of tens of micrometers. The vapor-solid mechanism was employed to interpret the SiC nanowires growth. Gaseous SiO which was produced by the reaction of Si powders with its surface oxidation reacted with the solid graphene to form SiC crystal nuclei. And SiC crystal nuclei would act as active sites for further growing into nanowires.

  13. Ultralight, Strong, Three-Dimensional SiC Structures.

    PubMed

    Chabi, Sakineh; Rocha, Victoria G; García-Tuñón, Esther; Ferraro, Claudio; Saiz, Eduardo; Xia, Yongde; Zhu, Yanqiu

    2016-02-23

    Ultralight and strong three-dimensional (3D) silicon carbide (SiC) structures have been generated by the carbothermal reduction of SiO with a graphene foam (GF). The resulting SiC foams have an average height of 2 mm and density ranging between 9 and 17 mg cm(-3). They are the lightest reported SiC structures. They consist of hollow struts made from ultrathin SiC flakes and long 1D SiC nanowires growing from the trusses, edges, and defect sites between layers. AFM results revealed an average flake thickness of 2-3 nm and lateral size of 2 μm. In-situ compression tests in the scanning electron microscope (SEM) show that, compared with most of the existing lightweight foams, the present 3D SiC exhibited superior compression strengths and significant recovery after compression strains of about 70%. PMID:26580985

  14. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  15. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    SciTech Connect

    Lebedev, A. A.; Zamorianskaya, M. V.; Davydov, S. Yu.; Kirilenko, D. A.; Lebedev, S. P. Sorokin, L. M.; Shustov, D. B.; Scheglov, M. P.

    2013-11-15

    Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.

  16. Insight into and Computational Studies of the Selective Synthesis of 6H-Dibenzo[b,h]xanthenes.

    PubMed

    Carneiro, Paula F; Pinto, Maria do Carmo F R; Marra, Roberta K F; Campos, Vinícius R; Resende, Jackson Antônio L C; Delarmelina, Maicon; Carneiro, José Walkimar M; Lima, Emerson S; da Silva, Fernando de C; Ferreira, Vitor F

    2016-07-01

    Starting from 2-hydroxy-1,4-naphthoquinone (lawsone), we synthesized eight new 6H-dibenzo[b,h]xanthene derivatives selectively under solvent-free conditions. Spectroscopic investigations confirmed that only the isomer 6H-dibenzo[b,h]xanthene was obtained in all eight cases. Computational studies provide a rationalization for the selective appearance of these isomers having as an intermediate an addition product. PMID:27281677

  17. Electrical characterization of 6H crystalline silicon carbide. M.S. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Lempner, Stephen E.

    1994-01-01

    Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

  18. F-1 Engine Installation to S-IC Stage

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Engineers and technicians at the Marshall Space Flight Center were installing an F-I engine on the Saturn V S-IC (first) stage thrust structure in building 4705. The S-IC (first) stage used five F-1 engines that produced a total thrust of 7,500,000 pounds as each engine produced 1,500,000 pounds of thrust. The S-IC stage lifted the Saturn V vehicle and Apollo spacecraft from the launch pad.

  19. Synthesis, structural characterization and biological activity of fluorinated Schiff-bases of the type [C6H4-1-(OH)-3-(CHdbnd NArF)

    NASA Astrophysics Data System (ADS)

    Avila-Sorrosa, Alcives; Hernández-González, Jorge Ignacio; Reyes-Arellano, Alicia; Toscano, Rubén A.; Reyes-Martínez, Reyna; Roberto Pioquinto-Mendoza, J.; Morales-Morales, David

    2015-04-01

    A series of fluorinated imines of the type [C6H4-1-(OH)-3-(CHdbnd NArF)]; ArFdbnd C6H4-4-F (1), C6H3-2,3-F2 (2), C6H3-3,5-F2 (3), C6H2-2,4,6-F3 (4), C6H4-3-CF3 (5), C6H3-3,5-(CF3)2 (6), were synthesized and fully characterized including single crystal X-ray diffraction analyses of compounds [C6H4-1-(OH)-3-(CHdbnd NC6H4-4-F)] (1), [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-F2)] (3), [C6H4-1-(OH)-3-(CHdbnd NC6H4-3-CF3)] (5). Further analyses of these results allowed the identification of the predominant non-covalent interactions and supramolecular arrangements in the solid state. Exploration of the anti-bacterial activity against both gram-positive and gram-negative bacteria showed those compounds including F or CF3 substituents at the meta positions i.e. [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-F2)] (3), [C6H4-1-(OH)-3-(CHdbnd NC6H4-3-CF3)] (5), [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-(CF3)2)] (6), to be the best when their activity is compared versus ampicillin.

  20. Corrosion pitting of SiC by molten salts

    NASA Technical Reports Server (NTRS)

    Jacobson, N. S.; Smialek, J. L.

    1986-01-01

    The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.

  1. Graphene covered SiC powder as advanced photocatalytic material

    NASA Astrophysics Data System (ADS)

    Zhu, Kaixing; Guo, Liwei; Lin, Jingjing; Hao, Weichang; Shang, Jun; Jia, Yuping; Chen, Lianlian; Jin, Shifeng; Wang, Wenjun; Chen, Xiaolong

    2012-01-01

    Graphene covered SiC powder (GCSP) has been fabricated by well established method of high temperature thermal decomposition of SiC. The structural and photocatalystic characteristics of the prepared GCSP were investigated and compared with that of the pristine SiC powder. Under UV illumination, more than 100% enhancement in photocatalystic activity is achieved in degradation of Rhodamine B (Rh B) by GCSP catalyst than by pristine SiC powder. The possible mechanisms underlining the observed results are discussed. The results suggested that GCSP as a composite of graphene based material has great potential for use as a high performance photocatalyst.

  2. Paralinear Oxidation of CVD SiC in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Hann, Raiford E., Jr.

    1997-01-01

    The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

  3. SiC Power MOSFET with Improved Gate Dielectric

    SciTech Connect

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  4. Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. Anthony; Salupo, Carl S.; Matus, Lawrence G.

    1994-01-01

    3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

  5. Sodium dipotassium citrate, NaK2C6H5O7

    PubMed Central

    Rammohan, Alagappa; Kaduk, James A.

    2016-01-01

    The crystal structure of sodium dipotassium citrate, Na+·2K+·C6H5O7 3−, has been solved and refined using laboratory X-ray powder diffraction data, and optimized using density functional techniques. The Na+ and one of the K+ cations are six-coordinate, with bond-valence sums of 1.13 and 0.92 valence units, respectively, while another crystallographically independent K+ cation is seven-coordinate with a bond-valence sum of 1.20. The [KO6] and [KO7] polyhedra share edges and corners to form layers perpendicular to the b axis. The distorted [NaO6] octa­hedra share edges to form chains along the a axis. The result is a three-dimensional network. The only O—H⋯O hydrogen bond is an intra­molecular one between the hy­droxy group and a terminal carboxyl­ate group. PMID:27006817

  6. Inelastic X-ray scattering from 6H-SiC

    SciTech Connect

    Macrander, A.T.; Blasdell, B.; Montano, P.A. |; Kao, C.C.

    1995-07-01

    The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.

  7. Damage Accumulation and Annealing in 6H-SiC Irradiated with Si+

    SciTech Connect

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; McCready, David E.

    1998-10-01

    Damage accumulation and annealing in 6H-silicon carbide (alpha-SiC) single crystals have been studied in situ using 2.0 MeV HeRBS in a <0001>-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si ion implantation (30 degrees off normal) at a temperature of -110 degrees C, and the damage recovery was investigated by subsequent isochromal annealing (20 min) over the temperature range from -110 degrees C to 900 degrees C. At ion fluences below 7.5 X 10 13 Si/cm (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences of 6.6 x 10 15 Si/cm (-90 degrees C), an amorphous layer is created from the surface to a depth of 0.6 mu-m. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90 degrees C to 600 degrees C.

  8. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

    SciTech Connect

    Henager, Charles H.; Jiang, Weilin

    2014-11-01

    MAX phases, such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti3SiC2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti3SiC2, SiC, and a dual-phase nanocomposite of Ti3SiC2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti3SiC2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti3SiC2 occurs during ion implantation at 873 K. Cs in Ti3SiC2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

  9. Rotational spectra and structures of the C6H6-HCN dimer and Ar3-HCN tetramer

    NASA Astrophysics Data System (ADS)

    Gutowsky, H. S.; Arunan, E.; Emilsson, T.; Tschopp, S. L.; Dykstra, C. E.

    1995-09-01

    A comparative study has been made of the rotational properties of C6H6-HCN and Ar3-HCN, observed with the Balle/Flygare pulsed beam, Fourier transform microwave spectrometer. C6H6-HCN is found to be a prolate symmetric top and Ar3-HCN an oblate one, both with the H in the middle. The rotational constants B0, DJ, and DJK of the parent species are 1219.9108(4) MHz, 1.12(3) kHz, and 18.32(8) kHz for C6H6-HCN, and 886.4878(1) MHz, 10.374(2) kHz, and 173.16(1) kHz for Ar3-HCN. Rotational constants are reported for the isotopic species C6H6-H13CN, -HC15N, and 13CC5H6-HC15N, and for Ar3-HC15N and -DCN. Analysis of the 14N hyperfine interaction χ finds its projection on the figure axis to be -4.223(4) MHz in C6H6-HCN and -1.143(2) in Ar3-HCN. They correspond to average projection angles θ between the HCN and figure axes of 15.2° and 45.3°, respectively. A pseudodiatomic analysis of the rotational constants gives the c.m. to c.m. distance to be 3.96 Å in C6H6-HCN and 3.47 Å in Ar3-HCN. While the rotational properties of C6H6-HCN are ``normal,'' those of Ar3-HCN display a long list of ``abnormalities.'' They include a J-dependent χ(14N) similar to that of Ar-HCN; a very large projection angle θ; large centrifugal distortion including higher-order terms in HJ and HJK; splitting of the K=3 transitions into J-dependent doublets; and the ready observation of an excited vibrational state. These behavioral differences are related qualitatively to the interaction surfaces for the two clusters, calculated with the molecular mechanics for clusters (MMC) model, and discussed. The potential minimum for C6H6-HCN is smooth, circular, steep except for a flat bottom, and deep (1762 cm-1). That for Ar3-HCN is tricuspid, with large gullies, and shallow (507 cm-1). In addition to the dispersion forces, the dominant interaction forming C6H6-HCN is between the benzene quadrupole moment and the HCN dipole moment, a strong 4-2 potential. That in Ar3-HCN is polarization of the spherical Ar

  10. Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony

    2004-01-01

    This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H- and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps. Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H- and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC

  11. FT-IR study on interactions between medroxyprogesterone acetate and solvent in CHCl3/cyclo-C6H12 and CCl4/cyclo-C6H12 binary solvent systems

    NASA Astrophysics Data System (ADS)

    Shi, Jie-hua; Fan, Chun-hui

    2012-09-01

    The intermolecular interactions between medroxyprogesterone acetate (MPA) and CHCl3 and CCl4 solvent in CHCl3/cyclo-C6H12 and CCl4/cyclo-C6H12 binary solvent systems have been studied by Fourier transform infrared spectroscopy (FT-IR). The experimental results showed that there are hydrogen bonding interactions between oxygen atoms of all carbonyl groups in MPA and hydrogen atom of CHCl3 so as to form 1:3 complex of MPA with CHCl3 and produce three new absorption bands at 1728.9-1736.1, 1712.7-1717.4 and 1661.9-1673.8 cm-1, respectively. And, 1:1 complex of MPA with CCl4 is formed in CCl4/cyclo-C6H12 binary solvent as a result of hydrogen bonding interaction between C3 carbonyl group and empty d-orbital in chlorine atom of CCl4 leading to producing new absorption band at 1673.2-1674.2 cm-1. However, all free carbonyl and associated carbonyl stretching vibrations of MPA in CHCl3/cyclo-C6H12 and CCl4/cyclo-C6H12 binary solvent systems shift to lower wavenumbers with the increasing of volume fraction of CHCl3 and CCl4 in binary solvent systems owing to the dipole-dipole interaction and the dipole-induced dipole interaction between MPA and solvents.

  12. "Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

    NASA Technical Reports Server (NTRS)

    Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

    1998-01-01

    Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

  13. Conformational Isomerism of trans-[Pt(NH2C6H11)2I2] and the Classical Wernerian Chemistry of [Pt(NH2C6H11)4]X2 (X = Cl, Br, I)1

    PubMed Central

    Johnstone, Timothy C.; Lippard, Stephen J.

    2012-01-01

    X-ray crystallographic analysis of the compound trans-[Pt(NH2C6H11)2I2] revealed the presence of two distinct conformers within one crystal lattice. This compound was studied by variable temperature NMR spectroscopy to investigate the dynamic interconversion between these isomers. The results of this investigation were interpreted using physical (CPK) and computational (molecular mechanics and density functional theory) models. The conversion of the salts [Pt(NH2C6H11)4]X2 into trans-[Pt(NH2C6H11)2X2] (X = Cl, Br, I) was also studied and is discussed here with an emphasis on parallels to the work of Alfred Werner. PMID:23554544

  14. Fine Mapping of the Barley Chromosome 6H Net Form Net Blotch Susceptibility Locus

    PubMed Central

    Richards, Jonathan; Chao, Shiaoman; Friesen, Timothy; Brueggeman, Robert

    2016-01-01

    Net form net blotch, caused by the necrotrophic fungal pathogen Pyrenophora teres f. teres, is a destructive foliar disease of barley with the potential to cause significant yield loss in major production regions throughout the world. The complexity of the host–parasite genetic interactions in this pathosystem hinders the deployment of effective resistance in barley cultivars, warranting a deeper understanding of the interactions. Here, we report on the high-resolution mapping of the dominant susceptibility locus near the centromere of chromosome 6H in the barley cultivars Rika and Kombar, which are putatively targeted by necrotrophic effectors from P. teres f. teres isolates 6A and 15A, respectively. Utilization of progeny isolates derived from a cross of P. teres f. teres isolates 6A × 15A harboring single major virulence loci (VK1, VK2, and VR2) allowed for the Mendelization of single inverse gene-for-gene interactions in a high-resolution population consisting of 2976 Rika × Kombar recombinant gametes. Brachypodium distachyon synteny was exploited to develop and saturate the susceptibility region with markers, delimiting it to ∼0.24 cM and a partial physical map was constructed. This genetic and physical characterization further resolved the dominant susceptibility locus, designated Spt1 (susceptibility to P. teres f. teres). The high-resolution mapping and cosegregation of the Spt1.R and Spt1.K gene/s indicates tightly linked genes in repulsion or alleles possibly targeted by different necrotrophic effectors. Newly developed barley genomic resources greatly enhance the efficiency of positional cloning efforts in barley, as demonstrated by the Spt1 fine mapping and physical contig identification reported here. PMID:27172206

  15. Fine Mapping of the Barley Chromosome 6H Net Form Net Blotch Susceptibility Locus.

    PubMed

    Richards, Jonathan; Chao, Shiaoman; Friesen, Timothy; Brueggeman, Robert

    2016-01-01

    Net form net blotch, caused by the necrotrophic fungal pathogen Pyrenophora teres f. teres, is a destructive foliar disease of barley with the potential to cause significant yield loss in major production regions throughout the world. The complexity of the host-parasite genetic interactions in this pathosystem hinders the deployment of effective resistance in barley cultivars, warranting a deeper understanding of the interactions. Here, we report on the high-resolution mapping of the dominant susceptibility locus near the centromere of chromosome 6H in the barley cultivars Rika and Kombar, which are putatively targeted by necrotrophic effectors from P. teres f. teres isolates 6A and 15A, respectively. Utilization of progeny isolates derived from a cross of P. teres f. teres isolates 6A × 15A harboring single major virulence loci (VK1, VK2, and VR2) allowed for the Mendelization of single inverse gene-for-gene interactions in a high-resolution population consisting of 2976 Rika × Kombar recombinant gametes. Brachypodium distachyon synteny was exploited to develop and saturate the susceptibility region with markers, delimiting it to ∼0.24 cM and a partial physical map was constructed. This genetic and physical characterization further resolved the dominant susceptibility locus, designated Spt1 (susceptibility to P. teres f. teres). The high-resolution mapping and cosegregation of the Spt1.R and Spt1.K gene/s indicates tightly linked genes in repulsion or alleles possibly targeted by different necrotrophic effectors. Newly developed barley genomic resources greatly enhance the efficiency of positional cloning efforts in barley, as demonstrated by the Spt1 fine mapping and physical contig identification reported here. PMID:27172206

  16. Alternate current characteristics of SiC powders

    NASA Astrophysics Data System (ADS)

    Mârtensson, E.; Gäfvert, U.; Önneby, C.

    2001-09-01

    Silicon carbide (SiC) powder is used in nonlinear field grading materials. The composite material, consisting of an insulating polymer matrix filled with the SiC grains, is usually a percolated system with established conducting paths. In order to explain the properties, the electrical characteristic of the SiC powder itself is of interest. The ac characteristics of SiC powders have been studied by dielectric response, capacitance-voltage, and ac-pulse measurements. The frequency, electric field, and pressure dependencies have been analyzed for green and black SiC, which have different doping. The ac characteristics of green and black SiC powders are governed by both the barrier regions at the SiC-grain contacts and the surrounding matrix. The nonlinear loss is determined by the conduction current at the contacts. Depending on the doping level of the SiC grains, the capacitance may be controlled by either the nonlinear capacitance of the barrier region or the linear capacitance of the surrounding matrix. Each contact zone may be modeled by a nonlinear resistance in parallel with both a nonlinear and a linear capacitance. The components are considered to be frequency independent. However, in order to explain the macroscopic frequency and field dependencies of the SiC powders, the use of a network of unique contact zones with dissimilar properties is suggested.

  17. Saturn V S-IC Stage LOX Tank

    NASA Technical Reports Server (NTRS)

    1964-01-01

    This image depicts the Saturn V S-IC (first) stage liquid oxygen (LOX) tank being lowered into the irner tank in a high bay at the Marshall Space Flight Center (MSFC). The S-IC stage utilized five F-1 engines that used liquid oxygen and kerosene as propellant and provided a combined thrust of 7,500,000 pounds.

  18. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  19. Processing of sintered alpha SiC

    NASA Technical Reports Server (NTRS)

    Storm, R. S.

    1984-01-01

    Processing methods of sintered alpha SiC for engine applications are developed in a cost effective manner, using a submicron sized powder blended with sintering aids (boron and carbon). The processes for forming a green powder compact, such as dry pressing, cold isostatic pressing and green machining, slip casting, aqueous extrusion, plastic extrusion, and injection molding, are described. Dry pressing is the simplest route to component fabrication, and is carried out at approximately 10,000 psi pressure, while in the cold isostatic method the pressure could go as high as 20,000 psi. Surfactants are added to control settling rates and casting characteristics in the slip casting. The aqueous extrusion process is accomplished by a hydraulic ram forcing the aqueous mixture through a die. The plastic forming processes of extrusion and injection molding offer the potential of greater diversity in shape capacity. The physical properties of sintered alpha SiC (hardness, Young's modulus, shear modulus, and thermal diffusivity) are extensively tested. Corrosion resistance test results of silicon carbide are included.

  20. Synthesis, structural and magnetic characterisation of the fully fluorinated compound 6H-BaFeO{sub 2}F

    SciTech Connect

    Clemens, Oliver; Wright, Adrian J.; Berry, Frank J.; Smith, Ronald I.; Slater, Peter R.

    2013-02-15

    The compound 6H-BaFeO{sub 2}F (P6{sub 3}/mmc) was synthesised by the low temperature fluorination of 6H-BaFeO{sub 3-d} using polyvinylidenedifluoride (PVDF) as a fluorination agent. Structural characterisation by XRD and NPD suggests that the local positions of the oxygen and fluorine atoms vary with no evidence for ordering on the anion sites. This compound shows antiferromagnetic ordering at room temperature with antiparallel alignment of the magnetic moments along the c-axis. The use of PVDF also allows the possibility of tuning the fluorine content in materials of composition 6H-BaFeO{sub 3-d}F{sub y} to any value of 06H-BaFeO{sub 2}F. Highlights: Black-Right-Pointing-Pointer The crystal structure of the hexagonal perovskite phase 6H-BaFeO{sub 2}F. Black-Right-Pointing-Pointer H-BaFeO{sub 2}F and 6H-BaFeO{sub 3-d}F{sub y} were prepared via low temperature fluorination using PVDF. Black-Right-Pointing-Pointer A structural investigation of the compounds BaFeO{sub 2}F is presented in detail. Black-Right-Pointing-Pointer This analysis suggests differences for the local coordination of O{sup 2-} and F{sup -} anions. Black-Right-Pointing-Pointer H-BaFeO{sub 2}F shows antiferromagnetic ordering at 300 K. Black-Right-Pointing-Pointer The magnetic moments align parallel to the a-axis.

  1. Immunosuppression Decreases Inflammation and Increases AAV6-hSERCA2a-Mediated SERCA2a Expression

    PubMed Central

    Zhu, Xiaodong; McTiernan, Charles F.; Rajagopalan, Navin; Shah, Hemal; Fischer, David; Toyoda, Yoshiya; Letts, Dustin; Bortinger, Jonathan; Gibson, Gregory; Xiang, Wenyu; McCurry, Kenneth; Mathier, Michael; Glorioso, Joseph C.

    2012-01-01

    Abstract The calcium pump SERCA2a (sarcoplasmic reticulum calcium ATPase 2a), which plays a central role in cardiac contraction, shows decreased expression in heart failure (HF). Increasing SERCA2a expression in HF models improves cardiac function. We used direct cardiac delivery of adeno-associated virus encoding human SERCA2a (AAV6-hSERCA2a) in HF and normal canine models to study safety, efficacy, and the effects of immunosuppression. Tachycardic-paced dogs received left ventricle (LV) wall injection of AAV6-hSERCA2a or solvent. Pacing continued postinjection for 2 or 6 weeks, until euthanasia. Tissue/serum samples were analyzed for hSERCA2a expression (Western blot) and immune responses (histology and AAV6-neutralizing antibodies). Nonpaced dogs received AAV6-hSERCA2a and were analyzed at 12 weeks; a parallel cohort received AAV-hSERCA2a and immunosuppression. AAV-mediated cardiac expression of hSERCA2a peaked at 2 weeks and then declined (to ∼50%; p<0.03, 6 vs. 2 weeks). LV end diastolic and end systolic diameters decreased in 6-week dogs treated with AAV6-hSERCA2a (p<0.05) whereas LV diameters increased in control dogs. Dogs receiving AAV6-hSERCA2a developed neutralizing antibodies (titer ≥1:120) and cardiac cellular infiltration. Immunosuppression dramatically reduced immune responses (reduced inflammation and neutralizing antibody titers <1:20), and maintained hSERCA2a expression. Thus cardiac injection of AAV6-hSERCA2a promotes local hSERCA2a expression and improves cardiac function. However, the hSERCA2a protein level is reduced by host immune responses. Immunosuppression alleviates immune responses and sustains transgene expression, and may be an important adjuvant for clinical gene therapy trials. PMID:22482463

  2. Growth Of Graphitic Polyhedra, SiC Platelets, And Carbon Nanotubes Filled With SiC Nanowires By Laser Ablation

    SciTech Connect

    Kokai, Fumio; Uchiyama, Kunihiro; Chigusa, Hajime; Nozaki, Iori; Noguchi, Eriko; Kameda, Yuto; Koshio, Akira

    2010-10-08

    Three characteristic silicon/carbon nanostructures, i.e., graphitic polyhedral (GP) particles, silicon carbide (SiC) platelets, and carbon nanotubes (CNTs) filled with SiC nanowires, were synthesized by the laser ablation of Si-C targets in the presence of high-pressure Ar gas up to 0.9 MPa. The growth of nanostructures was controlled merely by adjusting the Si content in graphite and the ambient Ar gas pressure. Deposits containing GP particles were purified by heat treatment at 550 deg. C in a pure oxygen atmosphere for 1 h. CNTs filled with SiC nanowires were grown without a catalyst. Unlike previous studies of CNTs filled with metals or compounds, all the CNTs checked by transmission electron microscopy contained SiC nanowires and no unfilled CNTs were produced. We discuss the growth mechanisms of the three nanostructures.

  3. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates

    NASA Astrophysics Data System (ADS)

    Perry, William George

    1997-12-01

    This dissertation describes the luminescence and x-ray diffraction characterization of GaN and AlxGa1-xN thin films that were deposited on 6H-SiC(0001) substrates. These materials have applications for optoelectronic devices that are operational in the UV to green regions of the spectrum and for high-temperature, high-frequency and high-power microelectronic devices. The primary tools used in this research were photoluminescence and cathodoluminescence spectroscopies and high-resolution x-ray diffraction. Biaxial strains resulting from the mismatches in thermal expansion coefficients and lattice parameters in GaN films grown on AlN buffer layers previously deposited on vicinal and on-axis 6H-SiC(0001) substrates were measured using photoluminescence. A linear relationship between the bound exciton energy (EBX) and the biaxial strain along the c-axis direction was observed. A marked variation in the biaxial strain in GaN films deposited on off- and on-axis SiC was determined. It was attributed to the difference in the density and nature of the microstructural defects that originate at the steps on the SiC surface. The strain in the GaN films was either in tension or compression; whereas, only tensile strains were reported in all previous studies using SiC wafers. This indicated that the lattice mismatch strain in the former films was not fully relieved by defect formation. This result was confirmed by the observation via HRTEM of a 0.9% residual compressive strain at the GaN/AlN interface. Cathodoluminescence was used to determine the optical spectra in AlxGa1-xN films over the entire composition range of x. A bowing parameter of b = 1.65 eV for the bound exciton peak was observed. This bound exciton peak became more localized as the Al mole fraction increased. This was attributed to the increase in the ionization energy (ED) of the donor to which the exciton was bound. The donor-acceptor pair (DAP) band and the so-called 'yellow' emission band that are commonly

  4. Fabrication of SiC whisker-reinforced SiC ceramics

    SciTech Connect

    Miyahara, Kaoru; Watanabe, Takashi; Koga, Shin; Sasa, Tadashi

    1992-10-01

    A fabrication process of SiC whisker-reinforced SiC ceramics consisting of whisker CVD-coating for the control of interfacial bonding, slurry-pressing and HIP consolidation has been developed. Microstructural observation confirmed the incorporation of the interfacial carbon layer in the composites brought about remarkable whisker bridging/pull-out in the fracture. Whisker-bridging was considered to be a predominant toughening mechanism. To optimize the interfacial properties, the effect of coating conditions, i.e., amount of coating and CVD temperature, on the fracture toughness were studied. The effect of whisker diameter on the fracture toughness and anisotropy in the fracture toughness were also investigated. 12 refs.

  5. Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  6. Infrared absorption of gaseous benzoyl radical C6H5CO recorded with a step-scan Fourier-transform spectrometer.

    PubMed

    Lin, Shu-Yu; Lee, Yuan-Pern

    2012-06-21

    A step-scan Fourier-transform infrared spectrometer coupled with a multipass absorption cell was utilized to monitor the gaseous transient species benzoyl radical, C(6)H(5)CO. C(6)H(5)CO was produced either from photolysis of acetophenone, C(6)H(5)C(O)CH(3), at 248 nm or in reactions of phenyl radical (C(6)H(5)) with CO; C(6)H(5) was produced on photolysis of C(6)H(5)Br at 248 nm. One intense band at 1838 ± 1 cm(-1), one weak band at 1131 ± 3 cm(-1), and two extremely weak bands at 1438 ± 5 and 1590 ± 10 cm(-1) are assigned to the C═O stretching (ν(6)), the C-C stretching mixed with C-H deformation (ν(15)), the out-of-phase C(1)C(2)C(3)/C(5)C(6)C(1) symmetric stretching (ν(10)), and the in-phase C(1)C(2)C(3)/C(4)C(5)C(6) antisymmetric stretching (ν(7)) modes of C(6)H(5)CO, respectively. These observed vibrational wavenumbers and relative IR intensities agree with those reported for C(6)H(5)CO isolated in solid Ar and with values predicted for C(6)H(5)CO with the B3LYP/aug-cc-pVDZ method. The rotational contours of the two bands near 1838 and 1131 cm(-1) simulated according to rotational parameters predicted with the B3LYP/aug-cc-pVDZ method fit satisfactorily with the experimental results. Additional products BrCO, C(6)H(5)C(O)Br, and C(6)H(5)C(O)C(6)H(5) were identified in the C(6)H(5)Br/CO/N(2) experiments; the kinetics involving C(6)H(5)CO and C(6)H(5)C(O)Br are discussed. PMID:22369517

  7. Ultrathin oxide interfaces on 6H-SiC formed by plasma hydrogenation: Ultra shallow depth profile study

    NASA Astrophysics Data System (ADS)

    Xie, Xianning; Loh, Kian Ping

    2002-11-01

    Silicon oxide ultrathin films grown on silicon carbide (6H-SiC) by plasma hydrogenation have been studied using ultrashallow depth profiling with time-of-flight secondary ion mass spectrometry. Plasma hydrogenation gives rise to an epitaxial RADICAL:[[RADICAND:[3

  8. 17 CFR 240.6h-2 - Security future based on note, bond, debenture, or evidence of indebtedness.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 17 Commodity and Securities Exchanges 3 2010-04-01 2010-04-01 false Security future based on note... of Exchanges § 240.6h-2 Security future based on note, bond, debenture, or evidence of indebtedness. A security future may be based upon a security that is a note, bond, debenture, or evidence...

  9. Identification and transcriptional profile of multiple genes in the posterior kidney of Nile tilapia at 6h post bacterial infections

    Technology Transfer Automated Retrieval System (TEKTRAN)

    To understand the molecular mechanisms involved in response of Nile tilapia (Oreochromis niloticus) to bacterial infection, suppression subtractive cDNA hybridization technique was used to identify upregulated genes in the posterior kidney of Nile tilapia at 6h post infection with Aeromonas hydrophi...

  10. Correction: A novel enantioselective synthesis of 6H-dibenzopyran derivatives by combined palladium/norbornene and cinchona alkaloid catalysis.

    PubMed

    Xu, Di; Dai, Li; Catellani, Marta; Motti, Elena; Della Ca', Nicola; Zhou, Zhiming

    2015-02-28

    Correction for 'A novel enantioselective synthesis of 6H-dibenzopyran derivatives by combined palladium/norbornene and cinchona alkaloid catalysis' by Di Xu et al., Org. Biomol. Chem., 2015, DOI: 10.1039/c4ob02551b. PMID:25629771

  11. Characterization of multiple SiC and C coatings on SiC fibers for composites

    SciTech Connect

    Paulson, T.E.; Pantano, C.G.; Veitch, L.C.

    1995-12-31

    The timely analysis of materials is crucial as new composites are developed for advanced applications in the aerospace industry. Components of the composites, such as fiber coatings, the interface region between the fiber and the matrix material, and the stability of the fiber coatings and fibers, will influence the final properties of the composite materials. Analyzing non-standard surfaces, i.e. cylindrical vs. flat substrates, in order to properly assess the chemical and microstructural properties of the fibers and coatings is not a trivial task. Sample preparation such as cutting and polishing can destroy valuable information contained at interfaces and within multiple coatings. Existing analytical methods have been investigated where most of the sample preparation has been eliminated. For this study, alternating layers of SiC and C on Textron`s SCS-0 SiC fiber were characterized using Secondary Ion Mass Spectrometry depth profiling (12KeV Cs{sup +} primary beam, negative SIMS mode), Scanning Auger Microscopy and Scanning Electron Microscopy. Several of these fibers were also heat-treated in an oxygen environment at 1200{degrees}C for 1 to 50 hours. SIMS depth profiling and SEM were used to ascertain the oxidative stability of the multi-layer coating on SiC fibers.

  12. Compatibility of SiC and SiC Composites with Molten Lead

    SciTech Connect

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  13. THERMAL CONDUCTIVITY OF SIC AND C FIBERS

    SciTech Connect

    Youngblood, Gerald E.; Senor, David J.; Kowbel, W.; Webb, J.; Kohyama, Akira

    2000-09-01

    Several rod-shaped specimens with uniaxially packed fibers (Hi-Nicalon, Hi-Nicalon Type S, Tyranno SA and Amoco K1100 types) and a pre-ceramic polymer matrix have been fabricated. By using appropriate analytic models, the bare fiber thermal conductivity (Kf) and the interface thermal conductance (h) will be determined as a function of temperature up to 1000?C before and after irradiation for samples cut from these rods. Initial results are: (1) for unirradiated Hi-Nicalon SiC fiber, Kf varied from 4.3 up to 5.9 W/mK for the 27-1000?C range, (2) for unirradiated K1100 graphite fiber, Kf varied from 576 down to 242 W/mK for the 27-1000?C range, and (3) h = 43 W/cm2K at 27?C as a typical fiber/matrix interface conductance.

  14. Ellipsometric study of cubic SiC

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Shoemaker, Neil S.; Powell, J. A.

    1990-01-01

    Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

  15. SSG SiC Optical Systems in Space

    NASA Technical Reports Server (NTRS)

    Robichaud, Joseph; Keys, Andrew S. (Technical Monitor)

    2002-01-01

    Silicon Carbide (SiC) materials provide a number of benefits for space based optical systems. SSG Precision Optronics has extensive experience in the areas of design, fabrication, integration, and test of SiC optical systems. This expertise has been applied to produce a number of SiC-based instruments, including the Miniature Infrared Camera and Spectrometer (MICAS) and Advanced Land Imager (ALI) optical systems which have flown as part of NASA's New Millennium program. Our presentation will provide an overview of SSG's experience in the development of these SiC flight systems.

  16. SiC Composite Turbine Vanes

    NASA Technical Reports Server (NTRS)

    Calomino, Anthony M.; Verilli, Michael J.

    2006-01-01

    Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing

  17. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  18. Compensation in epitaxial cubic SiC films

    NASA Technical Reports Server (NTRS)

    Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.

    1986-01-01

    Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

  19. Microwave joining of SiC ceramics and composites

    SciTech Connect

    Ahmad, I.; Silberglitt, R.; Tian, Y.L.; Katz, J.D.

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  20. Observations of Ag diffusion in ion implanted SiC

    SciTech Connect

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  1. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

    NASA Astrophysics Data System (ADS)

    Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.; Downey, Brian P.; Wheeler, Virginia D.; Storm, David F.; Hardy, Matthew T.

    2015-08-01

    RF-plasma MBE was used to epitaxially grow 4- to 100-nm-thick metallic β-Nb2N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality β-Nb2N is the substrate temperature. The X-ray characterization of films grown between 775 and 850 °C demonstrates β-Nb2N phase formation. The (0002) and (21\\bar{3}1) X-ray diffraction measurements of a β-Nb2N film grown at 850 °C reveal a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that β-Nb2N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present.

  2. Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

    NASA Astrophysics Data System (ADS)

    Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

    2016-07-01

    Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

  3. Electrical Characterization of Defects in SiC Schottky Barriers

    NASA Technical Reports Server (NTRS)

    Schnabel, C. M.; Tabib-Azar, M.; Raffaelle, R. P.; Su, H. B.; Dudley, M.; Neudeck, P. G.; Bailey, S.

    2005-01-01

    We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability

  4. Synthesis of micro-sized interconnected Si-C composites

    DOEpatents

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  5. Saturn V S-IC Stage Fuel Tank

    NASA Technical Reports Server (NTRS)

    1964-01-01

    This image shows the Saturn V S-IC-T stage (S-IC static test article) fuel tank being attached to the thrust structure in the vehicle assembly building at the Marshall Space Flight Center (MSFC). The S-IC stage utilized five F-1 engines that used liquid oxygen and kerosene as propellant and provided a combined thrust of 7,500,000 pounds.

  6. Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H-SiC(0001).

    PubMed

    Sforzini, J; Nemec, L; Denig, T; Stadtmüller, B; Lee, T-L; Kumpf, C; Soubatch, S; Starke, U; Rinke, P; Blum, V; Bocquet, F C; Tautz, F S

    2015-03-13

    We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (6√3×6√3)-R30° unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H-SiC(0001) approaches ideal graphene. PMID:25815955

  7. Artificial Neural Network Prediction for Thermal Decomposition of Potassium Nitrate (KNO3) and Benzoic Acid (C6H5COOH)

    NASA Astrophysics Data System (ADS)

    Beken, Murat

    The aim of this work is to correlate the results of experimental data by using the differential thermal analysis (DTA) method and predictions of artificial neural networks (ANNs). Thermal decomposition of potassium nitrate (KNO3) and benzoic acid (C6H5COOH) have been analyzed by the simultaneous DTA method. Kinetic parameters (critical points, the change of enthalpy) have been investigated. A computer model, based on multilayer feed-forwarding back-propagation is used for the prediction of critical points, phase transitions of potassium nitrate (KNO3) and benzoic acid (C6H5COOH). As a result of our study, we conclude that the ANN model shows a considerably good result about the prediction of experimental data.

  8. Study on the machined depth when nanoscratching on 6H-SiC using Berkovich indenter: Modelling and experimental study

    NASA Astrophysics Data System (ADS)

    Zhang, Feihu; Meng, Binbin; Geng, Yanquan; Zhang, Yong

    2016-04-01

    In order to investigate the deformation characteristics and material removing mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching tests were conducted on the surface of 6H-SiC (0 0 0 1) by using Berkovich indenter. In this paper, a theoretical model for nanoscratching with Berkovich indenter is proposed to reveal the relationship between the applied normal load and the machined depth. The influences of the elastic recovery and the stress distribution of the material are considered in the developed theoretical model. Experimental and theoretical machined depths are compared when scratching in different directions. Results show that the effects of the elastic recovery of the material, the geometry of the tip and the stress distribution of the interface between the tip and sample have large influences on the machined depth which should be considered for this kind of hard brittle material of 6H-SiC.

  9. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Zhuo, Shi-Yi; Zheng, Yan-Qing; Shi, Er-Wei

    2015-12-01

    A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 °C and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5× 10-5 Ω·cm2 is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 °C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures. Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

  10. Explicitly correlated coupled cluster calculations for the benzenium ion (C6H7(+)) and its complexes with Ne and Ar.

    PubMed

    Botschwina, Peter; Oswald, Rainer

    2011-11-24

    Explicitly correlated coupled cluster theory at the CCSD(T)-F12x (x = a, b) level (Adler, T. B.; Knizia, G.; Werner, H.-J. J. Chem. Phys. 2007, 127, 221106) has been employed in a study of the benzenium ion (C6H7(+)) and its complexes with a neon or an argon atom. The ground-state rotational constants of C6H7(+) are predicted to be A0 = 5445 MHz, B0 = 5313 MHz, and C0 = 2731 MHz. Anharmonic vibrational wavenumbers of this cation were obtained by combination of harmonic CCSD(T*)-F12a values with anharmonic contributions calculated by double-hybrid density functional theory at the B2PLYP-D level. For the complexes of C6H7(+) with Ne or Ar, the lowest energy minimum is of π-bonded structure. The corresponding dissociation energies D0 are estimated to be 160 and 550 cm(-1), respectively. There is no indication of H-bonds to the aromatic or aliphatic hydrogen atoms. Instead, three nonequivalent local energy minima were found for nuclear configurations where the rare-gas atom lies in the ring-plane and approximatly points to the center of one of the six CC bonds. PMID:21981720