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Sample records for nbn nanowire single

  1. Fabrication and Characterization of Superconducting NbN Nanowire Single Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stern, Jeffrey A.; Farr, William H.

    2006-01-01

    We report on the fabrication and characterization of high-speed, single photon detectors using superconducting NbN nanowires at a wavelength of 1064 nm. A 15 by 15 micron detector with a detector efficiency of 40% has been measured. Due to kinetic inductance, the recovery time of such large area detectors is longer than that of smaller or single wire detectors. The recovery time of our detectors (50 ns) has been characterized by measuring the inter-arrival time statistics of our detector.

  2. Characterization of NbN films for superconducting nanowire single photon detectors

    SciTech Connect

    Mcdonald, Ross D; Ayala - Valenzuela, Oscar E; Weisse - Bernstein, Nina R; Williamson, Todd L; Hoffbauer, M. A.; Graf, M. J.; Rabin, M. W.

    2011-01-14

    Nanoscopic superconducting meander patterns offer great promise as a new class of cryogenic radiation sensors capable of single photon detection. To realize this potential, control of the superconducting properties on the nanoscale is imperative. To this end, Superconducting Nanowire Single Photon Detectors (SNSPDs) are under development by means Energetic Neutral Atom Beam Lithography and Epitaxy, or ENABLE. ENABLE can growth highly-crystalline, epitaxial thin-film materials, like NbN, at low temperatures; such wide-ranging control of fabrication parameters is enabling the optimization of film properties for single photon detection. T{sub c}, H{sub c2}, {zeta}{sub GL} and J{sub c} of multiple thin films and devices have been studied as a function of growth conditions. The optimization of which has already produced devices with properties rivaling all reports in the existing literature.

  3. NbN superconducting nanowire single-photon detector fabricated on MgF2 substrate

    NASA Astrophysics Data System (ADS)

    Wu, J. J.; You, L. X.; Zhang, L.; Zhang, W. J.; Li, H.; Liu, X. Y.; Zhou, H.; Wang, Z.; Xie, X. M.; Xu, Y. X.; Fang, W.; Tong, L. M.

    2016-06-01

    The performance of superconducting nanowire single-photon detectors (SNSPDs) relies on substrate materials. Magnesium fluoride (MgF2) exhibits outstanding optical properties, such as large optical transmission range and low refractive index (n = 1.38), making it an attractive substrate. We present the fabrication and the performance of SNSPDs made of a 4.5 nm thick NbN thin film deposited on MgF2 substrate for the wavelength of 1550 nm. The front-side illuminated SNSPDs without an optical cavity showed a maximal detection efficiency of 12.8% at a system dark count rate (DCR) of 100 Hz, while the backside illuminated SNSPDs with a SiO2/Au optical cavity atop displayed a maximal detection efficiency of 33% at a DCR of 100 Hz.

  4. High efficiency and rapid response superconducting NbN nanowire single photon detector based on asymmetric split ring metamaterial

    SciTech Connect

    Li, Guanhai; Chen, Xiaoshuang; Wang, Shao-Wei Lu, Wei

    2014-06-09

    With asymmetric split ring metamaterial periodically placed on top of the niobium nitride (NbN) nanowire meander, we theoretically propose a kind of metal-insulator-metallic metamaterial nanocavity to enhance absorbing efficiency and shorten response time of the superconducting NbN nanowire single photon detector (SNSPD) operating at wavelength of 1550 nm. Up to 99.6% of the energy is absorbed and 96.5% dissipated in the nanowire. Meanwhile, taking advantage of this high efficiency absorbing cavity, we implement a more sparse arrangement of the NbN nanowire of the filling factor 0.2, which significantly lessens the nanowire and crucially boosts the response time to be only 40% of reset time in previous evenly spaced meander design. Together with trapped mode resonance, a standing wave oscillation mechanism is presented to explain the high efficiency and broad bandwidth properties. To further demonstrate the advantages of the nanocavity, a four-pixel SNSPD on 10 μm × 10 μm area is designed to further reduce 75% reset time while maintaining 70% absorbing efficiency. Utilizing the asymmetric split ring metamaterial, we show a higher efficiency and more rapid response SNSPD configuration to contribute to the development of single photon detectors.

  5. Fabrication and Characterization of Superconducting NbN Nanowire Single Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stern, Jeffrey A.; Farr, William H.

    2006-01-01

    This viewgraph presentation describes the fabrication of large area superconducting Niobium Nitride nanowire single photon detectors. The topics include: 1) Introduction and Motivation; 2) Operation of SNSPD Detectors; 3) NbTiN Deposition; 4) Fabrication Details; 5) Backside Coupled SNSPD; 6) Measurement Apparatus; 7) Electrical Response of a 15x15 micrometer SNSPD to 1064nm radiation; 8) Detector Efficiency vs Bias Current; 9) Interarrival Time Plot; 10) Detector Linearity; and 11) Conclusion.

  6. Quantum and thermal phase slips in superconducting niobium nitride (NbN) ultrathin crystalline nanowire: application to single photon detection.

    PubMed

    Delacour, Cécile; Pannetier, Bernard; Villegier, Jean-Claude; Bouchiat, Vincent

    2012-07-11

    We present low-temperature electronic transport properties of superconducting nanowires obtained by nanolithography of 4-nm-thick niobium nitride (NbN) films epitaxially grown on sapphire substrate. Below 6 K, clear evidence of phase slippages is observed in the transport measurements. Upon lowering the temperature, we observe the signatures of a crossover between a thermal and a quantum behavior in the phase slip regimes. We find that phase slips are stable even at the lowest temperatures and that no hotspot is formed. The photoresponse of these nanowires is measured as a function of the light irradiation wavelength and temperature and exhibits a behavior comparable with previous results obtained on thicker films. PMID:22694480

  7. Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content

    NASA Astrophysics Data System (ADS)

    Henrich, D.; Dörner, S.; Hofherr, M.; Il'in, K.; Semenov, A.; Heintze, E.; Scheffler, M.; Dressel, M.; Siegel, M.

    2012-10-01

    The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region.

  8. Fabrication of superconducting NbN meander nanowires by nano-imprint lithography

    NASA Astrophysics Data System (ADS)

    Mei, Yang; Li-Hua, Liu; Lu-Hui, Ning; Yi-Rong, Jin; Hui, Deng; Jie, Li; Yang, Li; Dong-Ning, Zheng

    2016-01-01

    Superconducting nanowire single photon detector (SNSPD), as a new type of superconducting single photon detector (SPD), has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano-imprint technology. In this process, a combination of hot embossing nano-imprint lithography (HE-NIL) and ultraviolet nano-imprint lithography (UV-NIL) is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature (Tc) of the superconducting NbN meander nanowires is about 5 K and the critical current (Ic) is about 3.5 μA at 2.5 K. Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00106 and 2009CB929102) and the National Natural Science Foundation of China (Grant Nos. 11104333 and 10974243).

  9. Inhomogeneous critical current in nanowire superconducting single-photon detectors

    SciTech Connect

    Gaudio, R. Hoog, K. P. M. op 't; Zhou, Z.; Sahin, D.; Fiore, A.

    2014-12-01

    A superconducting thin film with uniform properties is the key to realize nanowire superconducting single-photon detectors (SSPDs) with high performance and high yield. To investigate the uniformity of NbN films, we introduce and characterize simple detectors consisting of short nanowires with length ranging from 100 nm to 15 μm. Our nanowires, contrary to meander SSPDs, allow probing the homogeneity of NbN at the nanoscale. Experimental results, endorsed by a microscopic model, show the strongly inhomogeneous nature of NbN films on the sub-100 nm scale.

  10. Large-area NbN superconducting nanowire avalanche photon detectors with saturated detection efficiency

    NASA Astrophysics Data System (ADS)

    Murphy, Ryan P.; Grein, Matthew E.; Gudmundsen, Theodore J.; McCaughan, Adam; Najafi, Faraz; Berggren, Karl K.; Marsili, Francesco; Dauler, Eric A.

    2015-05-01

    Superconducting circuits comprising SNSPDs placed in parallel—superconducting nanowire avalanche photodetectors, or SNAPs—have previously been demonstrated to improve the output signal-to-noise ratio (SNR) by increasing the critical current. In this work, we employ a 2-SNAP superconducting circuit with narrow (40 nm) niobium nitride (NbN) nanowires to improve the system detection efficiency to near-IR photons while maintaining high SNR. Additionally, while previous 2-SNAP demonstrations have added external choke inductance to stabilize the avalanching photocurrent, we show that the external inductance can be entirely folded into the active area by cascading 2-SNAP devices in series to produce a greatly increased active area. We fabricated series-2-SNAP (s2-SNAP) circuits with a nanowire length of 20 μm with cascades of 2-SNAPs providing the choke inductance necessary for SNAP operation. We observed that (1) the detection efficiency saturated at high bias currents, and (2) the 40 nm 2-SNAP circuit critical current was approximately twice that for a 40 nm non-SNAP configuration.

  11. Single nanowire photovoltaics.

    PubMed

    Tian, Bozhi; Kempa, Thomas J; Lieber, Charles M

    2009-01-01

    This tutorial review focuses on recent work addressing the properties and potential of semiconductor nanowires as building blocks for photovoltaic devices based on investigations at the single nanowire level. Two central nanowire motifs involving p-i-n dopant modulation in axial and coaxial geometries serve as platforms for fundamental studies. Research illustrating the synthesis of these structural motifs will be reviewed first, followed by an examination of recent studies of single axial and coaxial p-i-n silicon nanowire solar cells. Finally, challenges and opportunities for improving efficiency enabled by controlled synthesis of more complex nanowire structures will be discussed, as will their potential applications as power sources for emerging nanoelectronic devices. PMID:19088961

  12. Rise time of voltage pulses in NbN superconducting single photon detectors

    NASA Astrophysics Data System (ADS)

    Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Yu. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Yu.

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  13. Single-nanowire photoelectrochemistry.

    PubMed

    Su, Yude; Liu, Chong; Brittman, Sarah; Tang, Jinyao; Fu, Anthony; Kornienko, Nikolay; Kong, Qiao; Yang, Peidong

    2016-07-01

    Photoelectrochemistry is one of several promising approaches for the realization of efficient solar-to-fuel conversion. Recent work has shown that photoelectrodes made of semiconductor nano-/microwire arrays can have better photoelectrochemical performance than their planar counterparts because of their unique properties, such as high surface area. Although considerable research effort has focused on studying wire arrays, the inhomogeneity in the geometry, doping, defects and catalyst loading present in such arrays can obscure the link between these properties and the photoelectrochemical performance of the wires, and correlating performance with the specific properties of individual wires is difficult because of ensemble averaging. Here, we show that a single-nanowire-based photoelectrode platform can be used to reliably probe the current-voltage (I-V) characteristics of individual nanowires. We find that the photovoltage output of ensemble array samples can be limited by poorly performing individual wires, which highlights the importance of improving nanowire homogeneity within an array. Furthermore, the platform allows the flux of photogenerated electrons to be quantified as a function of the lengths and diameters of individual nanowires, and we find that the flux over the entire nanowire surface (7-30 electrons nm(-2) s(-1)) is significantly reduced as compared with that of a planar analogue (∼1,200 electrons nm(-2) s(-1)). Such characterization of the photogenerated carrier flux at the semiconductor/electrolyte interface is essential for designing nanowire photoelectrodes that match the activity of their loaded electrocatalysts. PMID:27018660

  14. Single-nanowire photoelectrochemistry

    NASA Astrophysics Data System (ADS)

    Su, Yude; Liu, Chong; Brittman, Sarah; Tang, Jinyao; Fu, Anthony; Kornienko, Nikolay; Kong, Qiao; Yang, Peidong

    2016-07-01

    Photoelectrochemistry is one of several promising approaches for the realization of efficient solar-to-fuel conversion. Recent work has shown that photoelectrodes made of semiconductor nano-/microwire arrays can have better photoelectrochemical performance than their planar counterparts because of their unique properties, such as high surface area. Although considerable research effort has focused on studying wire arrays, the inhomogeneity in the geometry, doping, defects and catalyst loading present in such arrays can obscure the link between these properties and the photoelectrochemical performance of the wires, and correlating performance with the specific properties of individual wires is difficult because of ensemble averaging. Here, we show that a single-nanowire-based photoelectrode platform can be used to reliably probe the current–voltage (I–V) characteristics of individual nanowires. We find that the photovoltage output of ensemble array samples can be limited by poorly performing individual wires, which highlights the importance of improving nanowire homogeneity within an array. Furthermore, the platform allows the flux of photogenerated electrons to be quantified as a function of the lengths and diameters of individual nanowires, and we find that the flux over the entire nanowire surface (7–30 electrons nm–2 s–1) is significantly reduced as compared with that of a planar analogue (∼1,200 electrons nm–2 s–1). Such characterization of the photogenerated carrier flux at the semiconductor/electrolyte interface is essential for designing nanowire photoelectrodes that match the activity of their loaded electrocatalysts.

  15. Experimental investigation of the detection mechanism in WSi nanowire superconducting single photon detectors

    NASA Astrophysics Data System (ADS)

    Gaudio, Rosalinda; Renema, Jelmer J.; Zhou, Zili; Verma, Varun B.; Lita, Adriana E.; Shainline, Jeffrey; Stevens, Martin J.; Mirin, Richard P.; Nam, Sae Woo; van Exter, Martin P.; de Dood, Michiel J. A.; Fiore, Andrea

    2016-07-01

    We use quantum detector tomography to investigate the detection mechanism in WSi nanowire superconducting single photon detectors. To this purpose, we fabricated a 250 nm wide and 250 nm long WSi nanowire and measured its response to impinging photons with wavelengths ranging from λ = 900 nm to λ = 1650 nm. Tomographic measurements show that the detector response depends on the total excitation energy only. Moreover, for total absorbed energies >0.8 eV the current-energy relation is linear, similar to what was observed in NbN nanowires, whereas the current-energy relation deviates from linear behavior for total energies below 0.8 eV.

  16. Electrochemically Grown Single Nanowire Sensors

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Penner, Reginald; Bangar, Mangesh; Mulchandani, Ashok; Myung, Nosang V.

    2004-01-01

    We report a fabrication technique that is potentially capable of producing arrays of individually addressable nanowire sensors with controlled dimensions, positions, alignments, and chemical compositions. The concept has been demonstrated with electrodeposition of palladium wires with 75 nm to 350 nm widths. We have also fabricated single and double conducting polymer nanowires (polyaniline and polypyrrole) with 100nm and 200nm widths using electrochemical direct growth. Using single Pd nanowires, we have also demonstrated hydrogen sensing. It is envisioned that these are the first steps towards nanowire sensor arrays capable of simultaneously detecting multiple chemical species.

  17. Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stern, Jeffrey A.; Farr, William H.; Leduc, Henry G.; Bumble, Bruce

    2008-01-01

    Superconducting-nanowire single-photon detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize Nb(x)Ti(1-x)N in the high-superconducting-transition temperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

  18. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  19. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  20. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources. PMID:12618824

  1. Large-sensitive-area superconducting nanowire single-photon detector at 850 nm with high detection efficiency.

    PubMed

    Li, Hao; Zhang, Lu; You, Lixing; Yang, Xiaoyan; Zhang, Weijun; Liu, Xiaoyu; Chen, Sijing; Wang, Zhen; Xie, Xiaoming

    2015-06-29

    Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on one-dimensional photonic crystals, which acted as optical cavities to enhance the optical absorption, with a sensitive-area diameter of 50 μm. The fabricated multimode fiber coupled NbN SNSPDs exhibited a maximum system detection efficiency (DE) of up to 82% and a DE of 78% at a dark count rate of 100 Hz at 850-nm wavelength as well as a system jitter of 105 ps. PMID:26191739

  2. Controlled growth of single nanowires within a supported alumina template

    NASA Astrophysics Data System (ADS)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.; Bayot, V.; Melinte, S.; Piraux, L.; Mátéfi-Tempfli, S.

    2006-10-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire patterns as well as arrays of single nanowires with a precise position and spacing.

  3. Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors

    SciTech Connect

    Lusche, R. Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W.

    2014-07-28

    A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model.

  4. Electro-thermal simulation of superconducting nanowire avalanche photodetectors

    SciTech Connect

    Marsili, F.; Najafi, F.; Herder, C.; Berggren, K. K.

    2011-01-01

    We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.

  5. Single-photon detection using magnesium diboride superconducting nanowires

    NASA Astrophysics Data System (ADS)

    Shibata, H.; Takesue, H.; Honjo, T.; Akazaki, T.; Tokura, Y.

    2010-11-01

    We fabricated 10 nm thick MgB2 nanowires with a width down to 100 nm using the liftoff process. The I-V characteristics of the nanowire show hysteresis and a sharp voltage jump at Ic. Though a 150 nm wide nanowire exhibits the capacity for detecting a single photon at 405 nm wavelength, the nanowire is too wide to detect a single photon at 1560 nm. A 100 nm wide nanowire exhibits the capacity for detecting single photons in the 405-1560 nm wavelength range. This indicates a possible application of MgB2 as a high-performance superconducting nanowire single-photon detector.

  6. Superconducting nanowire single photon detector at 532 nm and demonstration in satellite laser ranging.

    PubMed

    Li, Hao; Chen, Sijing; You, Lixing; Meng, Wengdong; Wu, Zhibo; Zhang, Zhongping; Tang, Kai; Zhang, Lu; Zhang, Weijun; Yang, Xiaoyan; Liu, Xiaoyu; Wang, Zhen; Xie, Xiaoming

    2016-02-22

    Superconducting nanowire single-photon detectors (SNSPDs) at a wavelength of 532 nm were designed and fabricated aiming to satellite laser ranging (SLR) applications. The NbN SNSPDs were fabricated on one-dimensional photonic crystals with a sensitive-area diameter of 42 μm. The devices were coupled with multimode fiber (ϕ = 50 μm) and exhibited a maximum system detection efficiency of 75% at an extremely low dark count rate of <0.1 Hz. An SLR experiment using an SNSPD at a wavelength of 532 nm was successfully demonstrated. The results showed a depth ranging with a precision of ~8.0 mm for the target satellite LARES, which is ~3,000 km away from the ground ranging station at the Sheshan Observatory. PMID:26907010

  7. Single conducting polymer nanowire based conductometric sensors

    NASA Astrophysics Data System (ADS)

    Bangar, Mangesh Ashok

    The detection of toxic chemicals, gases or biological agents at very low concentrations with high sensitivity and selectivity has been subject of immense interest. Sensors employing electrical signal readout as transduction mechanism offer easy, label-free detection of target analyte in real-time. Traditional thin film sensors inherently suffered through loss of sensitivity due to current shunting across the charge depleted/added region upon analyte binding to the sensor surface, due to their large cross sectional area. This limitation was overcome by use of nanostructure such as nanowire/tube as transducer where current shunting during sensing was almost eliminated. Due to their benign chemical/electrochemical fabrication route along with excellent electrical properties and biocompatibility, conducting polymers offer cost-effective alternative over other nanostructures. Biggest obstacle in using these nanostructures is lack of easy, scalable and cost-effective way of assembling these nanostructures on prefabricated micropatterns for device fabrication. In this dissertation, three different approaches have been taken to fabricate individual or array of single conducting polymer (and metal) nanowire based devices and using polymer by itself or after functionalization with appropriate recognition molecule they have been applied for gas and biochemical detection. In the first approach electrochemical fabrication of multisegmented nanowires with middle functional Ppy segment along with ferromagnetic nickel (Ni) and end gold segments for better electrical contact was studied. This multi-layered nanowires were used along with ferromagnetic contact electrode for controlled magnetic assembly of nanowires into devices and were used for ammonia gas sensing. The second approach uses conducting polymer, polypyrrole (Ppy) nanowires using simple electrophoretic alignment and maskless electrodeposition to anchor nanowire which were further functionalized with antibodies against

  8. Synthesis and characterization of single crystalline selenium nanowire arrays

    SciTech Connect

    Zhang, X.Y. . E-mail: apzhxy@polyu.edu.hk; Xu, L.H.; Dai, J.Y.; Cai, Y.; Wang, N.

    2006-09-14

    Ordered selenium nanowire arrays with diameters about 40 nm have been fabricated by electrodeposition using anodic porous alumina templates. As determined by X-ray diffraction, Raman spectra, electron diffraction and high-resolution transmission electron microscopy, selenium nanowires have uniform diameters, which are fully controllable. Single crystalline trigonal selenium nanowires have been obtained after postannealing at 180 deg. C. These nanowires are perfect with a c-axis growth orientation. The optical absorption spectra reveal two types of electron transition activity.

  9. High performance single In2Se3 nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Li, Q. L.; Li, Y.; Gao, J.; Wang, S. D.; Sun, X. H.

    2011-12-01

    The single indium selenide (In2Se3) nanowire photodetectors were fabricated, and the performance characteristics of the nanowire devices were systematically investigated. The single In2Se3 nanowire photodetectors show high and stable photoresponse in wide light wavelength (254-800 nm) and temperature range (7-300 K). The spectra response indicates that the absorption coefficient of the In2Se3 nanowires at certain wavelength dominates the performance of the devices. The good linearity of the photocurrents with the incident irradiation over a wide wavelength range has been obtained, demonstrating that the In2Se3 nanowire photodetectors work in a typical light-dependent resistor mode.

  10. Magnetization reversal in single ferromagnetic rectangular nanowires

    NASA Astrophysics Data System (ADS)

    de Oliveira, Alexandre B.; da Silva, Gilvânia L.; Rezende, Sergio M.; Azevedo, Antonio

    2010-01-01

    We report on the magnetoresistance (MR) investigation of the magnetization reversal processes in single rectangular nanowire of Permalloy. A set of nanowires with lengths ranging from 6 to 20 μm, thicknesses fixed in 10 nm, and widths between 250 nm and 1.2 μm, was fabricated by means of AFM local anodic oxidation lithography. Magnetoresistive hysteresis loops show an abrupt jump corresponding to the magnetization reversal that depends on the angle between the wire axis and the applied magnetic field direction. The field value corresponding to the abrupt jump of the MR was associated to the nucleation field deduced from the Brown equations. By the angular dependence of this magnetization reversal field we were able to identify the nucleation mode as the magnetization buckling. We have investigated the temperature dependence of the switching field as well as its stochastic nature as a function of the in-plane angle.

  11. Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stem, Jeffrey A.; Farr, William H.; Leduc, Henry G.; Bumble, Bruce

    2008-01-01

    Superconducting-nanowire singlephoton detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize NbxTi1 xN in the high-superconducting-transitiontemperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

  12. Single Nanowire Probe for Single Cell Endoscopy and Sensing

    NASA Astrophysics Data System (ADS)

    Yan, Ruoxue

    The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

  13. Full-Color Single Nanowire Pixels for Projection Displays.

    PubMed

    Ra, Yong-Ho; Wang, Renjie; Woo, Steffi Y; Djavid, Mehrdad; Sadaf, Sharif Md; Lee, Jaesoong; Botton, Gianluigi A; Mi, Zetian

    2016-07-13

    Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer. PMID:27332859

  14. Superconducting nanowire single photon detector on diamond

    SciTech Connect

    Atikian, Haig A.; Burek, Michael J.; Choy, Jennifer T.; Lončar, Marko; Eftekharian, Amin; Jafari Salim, A.; Hamed Majedi, A.

    2014-03-24

    Superconducting nanowire single photon detectors are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310 nm and 632 nm photons. A multi-step diamond surface polishing procedure is reported, involving iterative reactive ion etching and mechanical polishing to create a suitable diamond surface for the deposition and patterning of thin film superconducting layers. Using this approach, diamond substrates with less than 300 pm Root Mean Square surface roughness are obtained.

  15. Thermoelectric nanowire single-photon detector

    NASA Astrophysics Data System (ADS)

    Kuzanyan, Astghik A.; Kuzanyan, Armen S.

    2013-05-01

    We have collected and analyzed the values of thermoelectric parameters of thermoelectric materials and on this basis calculated the energy resolution and photon count rate of the Thermoelectric Nanowire Single-Photon Detector (TNSPD). It is concluded that the TNSPD can achieve higher specifications as compared with the best single-photon detectors. The lanthanum-cerium hexaboride sensors of TNSPD are expected to reach more than gigahertz count rates and will have a sensitivity of 0.1 eV. It means that the device is sensitive enough to register and spectrally characterize not only X-ray and UV, but also optical and infrared photons, as its major competitors, the superconducting and semiconducting single-photon detectors.

  16. Nonvolatile resistive switching in single crystalline ZnO nanowires.

    PubMed

    Yang, Yuchao; Zhang, Xiaoxian; Gao, Min; Zeng, Fei; Zhou, Weiya; Xie, Sishen; Pan, Feng

    2011-04-01

    We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories. PMID:21394361

  17. Effect of temperature on superconducting nanowire single-photon detector noise

    NASA Astrophysics Data System (ADS)

    Bahgat Shehata, A.; Ruggeri, A.; Stellari, F.; Weger, Alan J.; Song, P.; Sunter, K.; Najafi, F.; Berggren, Karl K.; Anant, Vikas

    2015-08-01

    Today Superconducting Nanowire Single-Photon Detectors (SNSPDs) are commonly used in different photon-starved applications, including testing and diagnostics of VLSI circuits. Detecting very faint signals in the near-infrared wavelength range requires not only good detection efficiency, but also very low Dark Count Rate (DCR) and jitter. For example, low noise is crucial to enable ultra-low voltage optical testing of integrated circuits. The effect of detector temperature and background thermal radiation on the noise of superconducting single-photon detectors made of NbN meanders is studied in this paper. It is shown that two different regimes can be identified in the DCR vs. bias current characteristics. At high bias, the dark count rate is dominated by the intrinsic noise of the detector, while at low bias current it is dominated by the detection of stray photons that get onto the SNSPD. Changing the detector temperature changes its switching current and only affects the high bias branch of the characteristics: a reduction of the DCR can be achieved by lowering the SNSPD base temperature. On the other hand, changing the temperature of the single-photon light source (e.g. the VLSI circuit under test) only affects the low bias regime: a lower target temperature leads to a smaller DCR.

  18. A single crystalline InP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  19. Modelling superconducting nanowire single photon detectors in a waveguide cavity.

    PubMed

    Tyler, Nicola A; Barreto, Jorge; Villarreal-Garcia, Gerardo E; Bonneau, Damien; Sahin, Döndü; O'Brien, Jeremy L; Thompson, Mark G

    2016-04-18

    In this work we report on a single photon detector system which offers near-unity detection efficiency using waveguide-coupled superconducting nanowires with lengths on the order of 1 μm. This is achieved by embedding the nanowires in a racetrack resonator where the interaction time with the photons trapped in the cavity is increased, thereby allowing for shorter nanowires. We expect this to lead to a higher fabrication yield as the amount of inhomogeneities decreases for shorter nanowires. Our simulations show a system with a 1 μm long superconducting nanowire single photon detector (SNSPD) operating at near-unity detection efficiency using design parameters that can be realistically achieved with conventional fabrication processes. The resonant cavity introduces spectral selectivity to the otherwise broad-band SNSPDs and the cavity induced timing jitter is shown to be insignificant for SNSPDs longer than 1 μm. PMID:27137314

  20. Single CdTe Nanowire Optical Correlator for Femtojoule Pulses.

    PubMed

    Xin, Chenguang; Yu, Shaoliang; Bao, Qingyang; Wu, Xiaoqin; Chen, Bigeng; Wang, Yipei; Xu, Yingxin; Yang, Zongyin; Tong, Limin

    2016-08-10

    On the basis of the transverse second harmonic generation (TSHG) in a highly nonlinear subwavelength-diameter CdTe nanowire, we demonstrate a single-nanowire optical correlator for femto-second pulse measurement with pulse energy down to femtojoule (fJ) level. Pulses to be measured were equally split and coupled into two ends of a suspending nanowire via tapered optical fibers. The couterpropagating pulses meet each other around the central area of the nanowire, and emit TSHG signal perpendicular to the axis of the nanowire. By transferring the spatial intensity profile of the transverse second harmonic (TSH) image into the time-domain temporal profile of the input pulses, we operate the nanowire as a miniaturized optical correlator. Benefitted from the high nonlinearity and the very small effective mode area of the waveguiding CdTe nanowire, the input energy of the single-nanowire correlator can go down to fJ-level (e.g., 2 fJ/pulse for 1064 nm 200 fs pulses). The miniature fJ-pulse correlator may find applications from low power on-chip optical communication, biophotonics to ultracompact laser spectroscopy. PMID:27414182

  1. Magnetoresistance of nanosized magnetic configurations in single nanowires

    NASA Astrophysics Data System (ADS)

    Wegrowe, J.-E.; Gilbert, S.; Doudin, B.; Ansermet, J.-Ph.

    1998-03-01

    The problem of studying spin configurations at nanoscopic level is that magnetic measurements at this scale cannot be performed using usual magnetometers. We have shown that anisotropic magnetoresistance (AMR) measured with micro-contacts allows spin configurations of a single nanowire to be studied in details. The nanowires are diameter 50 nm and length 6000 nm and are produced by a combination of electrodeposition in track-etched membrane templates and sputtering technics. Magnetoresistance of well-defined spin configurations in single nanowires, like Curling magnetization reversal modes or domain wall, are measured.

  2. Imaging Electrogenerated Chemiluminescence at Single Gold Nanowire Electrodes.

    PubMed

    Wilson, Andrew J; Marchuk, Kyle; Willets, Katherine A

    2015-09-01

    We report electrogenerated chemiluminescence (ECL) generated at single gold nanowire electrodes supported on tin-doped indium oxide. Unlike other single nanoparticle electrochemical characterization techniques, ECL provides a massively parallel direct readout of electrochemical activity on individual nanoparticle electrodes without the need for extrinsic illumination or a scanning electrochemical probe. While ECL is not observed from as-purchased nanowires due to the surfactant layer, by removing the layer and coating the nanowires with a polymer blend, ECL from single nanowire electrodes is readily measured. With an increase in polymer thickness, an increase in ECL image quality and reproducibility over multiple redox cycles is observed. The polymer coating also provides a strategy for stabilizing gold nanoparticle electrodes against complete surface oxidation in aqueous environments. PMID:26267267

  3. A route to fabricate single crystalline bismuth nanowire arrays with different diameters

    NASA Astrophysics Data System (ADS)

    Li, Liang; Zhang, Yong; Li, Guanghai; Zhang, Lide

    2003-09-01

    Single crystalline bismuth nanowire arrays in anodic alumina membrane have been fabricated by pulsed electrodeposition. The nanowires of different diameters were obtained by changing the electrical parameter of the pulsed electrodeposition using anodic alumina membrane as template with the same pore size. X-ray diffraction and TEM analysis show that the bismuth nanowires are single crystalline with highly preferential orientation, and the diameter of nanowires increases with increasing the relaxation time of pulse. The growth mechanism of nanowires was discussed.

  4. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Verma, V. B.; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W.

    2016-03-01

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  5. Superconducting-nanowire single-photon-detector linear array

    NASA Astrophysics Data System (ADS)

    Zhao, Qingyuan; McCaughan, Adam; Bellei, Francesco; Najafi, Faraz; De Fazio, Domenico; Dane, Andrew; Ivry, Yachin; Berggren, Karl K.

    2013-09-01

    We designed, fabricated, and tested a one-dimensional array of superconducting-nanowire single-photon detectors, integrated with on-chip inductors and resistors. The architecture is suitable for monolithic integration on a single chip operated in a cryogenic environment, and inherits the characteristics of individual superconducting-nanowire single-photon detectors. We demonstrated a working array with four pixels showing position discrimination and a timing jitter of 124 ps. The electronic crosstalk between the pixels in the array was negligible.

  6. General hypothesis governing the growth of single-crystal nanowires

    NASA Astrophysics Data System (ADS)

    Mohammad, S. Noor

    2010-06-01

    The growth and growth rates of single-crystal nanowires by vapor phase mechanisms have been studied. A hypothesis has been proposed, which lays down foundation for the nanowire growth. It redefines the basic concepts of droplets from seeds and describes the fundamental basis of the adhesive properties of droplets. A set of droplet characteristics has been defined, a model in the framework of the hypothesis has been developed, and theoretical calculations have been performed. Experiments have also been carried out. Close correspondences between the theoretical and the experimental results lend support for the hypothesis and the model. Additional experimental evidences quantify the validity of the hypothesis. The calculated results resolve conflicts and controversies. They address the roles of catalysts in the growth of single-crystal nanowires. They shed light on the basic differences in the growth of thin and thick nanowires. They elucidate possible relationship between eutectic temperature and activation energy in the vapor-liquid-solid growth. They provide ground rules that govern the relative supplies of constituent vapor species for the growth of compound semiconductor nanowires. They explain how the same alloyed droplet (e.g., Au/Ga) is activated differently under the influence of different nonmetal elements of different nanowires (for example, As of GaAs, P of GaP, and N of GaN). They demonstrate, for example, that the nanowire growth may be achieved by means that creates thermodynamic imbalance and nanopores inside the seeds at temperatures far below the seed's melting temperature. Alloying in the vapor-solid-liquid mechanism is one such means where growth of even thick nanowires (radius of rD≥50 nm) is possible at temperatures far below the eutectic temperature. The hypothesis, is called the simple, novel, and malleable (SNM) hypothesis. This hypothesis, together with the model, appears to have solved the basic origin of the nanowire growth. It

  7. Controllable orientation of single silver nanowire using two fiber probes

    PubMed Central

    Xu, Xiaohao; Cheng, Chang; Xin, Hongbao; Lei, Hongxiang; Li, Baojun

    2014-01-01

    We report a strategy for realizing precise orientation of single silver nanowire using two fiber probes. By launching a laser of 980 nm wavelength into the two fibers, single silver nanowire with a diameter of 600 nm and a length of 6.5 μm suspended in water was trapped and rotated by optical torque resulting from its interaction with optical fields outputted from the fiber probes. Angular orientation of the nanowire was controlled by varying the relative distance between the two fiber probes. The angular stiffness, which refers to the stability of orientation, was estimated to be on the order of 10−19 J/rad2·mW. The experiments were interpreted by theoretical analysis. PMID:24496474

  8. High sensitivity silicon single nanowire junctionless phototransistor

    NASA Astrophysics Data System (ADS)

    Das, Samaresh; Dhyani, Veerendra; Georgiev, Yordan M.; Williams, David A.

    2016-02-01

    A high-gain photodetector based on junctionless MOSEFT has been presented in this work. Tri-gate junctionless nanowire phototransistors were fabricated on (100) silicon-on-insulator wafers with a buried oxide of thickness 145 nm and top silicon layer of thickness 10 nm. The gate stack consisted of a 10 nm SiO2 dielectric and a 50 nm poly-Si gate electrode. The channel length and doping concentration of junctionless n-MOSFETs was 1 μm and 3 × 1019 cm-3, respectively. The dark current of this device measured at room temperature was less than 1 pA. The measured internal gain of the device was about 35 for 860 nm light illumination. The photocurrent was 300 times larger than the dark current for only 30 nW incident power on the nanowire at 300 mV drain bias.

  9. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  10. Harmonics Generation by Surface Plasmon Polaritons on Single Nanowires

    PubMed Central

    2016-01-01

    We present experimental observations of visible wavelength second- and third-harmonic generation on single plasmonic nanowires of variable widths. We identify that near-infrared surface plasmon polaritons, which are guided along the nanowire, act as the source of the harmonics generation. We discuss the underlying mechanism of this nonlinear process, using a combination of spatially resolved measurements and numerical simulations to show that the visible harmonics are generated via a combination of both local and propagating plasmonic modes. Our results provide the first demonstration of nanoscale nonlinear optics with guided, propagating plasmonic modes on a lithographically defined chip, opening up new routes toward integrated optical circuits for information processing. PMID:27563688

  11. Direct Photonic-Plasmonic Coupling and Routing in Single Nanowires

    SciTech Connect

    Yan, Rouxue; Pausauskie, Peter; Huang, Jiaxing; Yang, Piedong

    2009-10-20

    Metallic nanoscale structures are capable of supporting surface plasmon polaritons (SPPs), propagating collective electron oscillations with tight spatial confinement at the metal surface. SPPs represent one of the most promising structures to beat the diffraction limit imposed by conventional dielectric optics. Ag nano wires have drawn increasing research attention due to 2D sub-100 nm mode confinement and lower losses as compared with fabricated metal structures. However, rational and versatile integration of Ag nanowires with other active and passive optical components, as well as Ag nanowire based optical routing networks, has yet to be achieved. Here, we demonstrate that SPPs can be excited simply by contacting a silver nanowire with a SnO2 nanoribbon that serves both as an unpolarized light source and a dielectric waveguide. The efficient coupling makes it possible to measure the propagation-distance-dependent waveguide spectra and frequency-dependent propagation length on a single Ag nanowire. Furthermore, we have demonstrated prototypical photonic-plasmonic routing devices, which are essential for incorporating low-loss Ag nanowire waveguides as practical components into high-capacity photonic circuits.

  12. Single crystalline molybdenum nanowires, nanowire arrays and nanopore arrays in nickel-aluminium.

    PubMed

    Milenkovic, Srdjan; Smith, Andrew Jonathan; Hassel, Achim Walter

    2009-06-01

    This work describes a novel fabrication method of single crystalline Mo nanowires and nanowire arrays. The method utilizes directional solidification (ds) of a NiAl-Mo eutectic alloy and its subsequent electrochemical processing. In the first step, a self-organized array of Mo nanowires embedded in a NiAl matrix is obtained. By combining the Pourbaix diagrams of the three elements involved, a strategy for selective removal of either of the two phases is derived. An oxidizing acidic solution of pH 0.2 dissolved the matrix and released an array of long and uniform Mo wires. Even a complete extraction of the wires is possible through entire dissolution of the matrix. On the other hand, electrodissolution of the Mo with a simultaneous passivation of the NiAl matrix at the pH 6 and the potential of 200 mV SHE yielded nanopore arrays with rectangular pores. This method has several advantages. First of all, it is one of the few top-down methods that allow the production of large amounts of nanostructures. In addition, both the wires and the matrix are single crystalline which makes them favorable for various applications. Further, the obtained nanostructures exhibit extremely high aspect ratios (> 1000), unreachable by most other techniques. This technique has the potential for the production of nanowire arrays either for employment in sensors or in field emission. PMID:19504862

  13. Dry-growth of silver single-crystal nanowires from porous Ag structure

    NASA Astrophysics Data System (ADS)

    Chen, Chuantong; Nagao, Shijo; Jiu, Jinting; Zhang, Hao; Sugahara, Tohru; Suganuma, Katsuaki

    2016-06-01

    A fabrication method of single crystal Ag nanowires in large scale is introduced without any chemical synthesis in wet processes, which usually generates fivefold twinned nanowires of fcc metals. Dense single-crystal nanowires grow on a mechanically polished surface of micro-porous Ag structure, which is created from Ag micro-particles. The diameter and the length of the nanowires can be controlled simply by changing the temperature and the time of the heating during the nanowire growth in air. Unique growth mechanism is described in detail, based on stress-induced migration accelerated by the micro-porous structure where the origin of Ag nanowires growth is incubated. Transmission electron microscopy analysis on the single crystal nanowires is also presented. This simple method offered an alternative preparation for metallic nanowires, especially with the single crystal structure in numerous applications.

  14. ``Hot spots'' growth on single nanowire controlled by electric charge

    NASA Astrophysics Data System (ADS)

    Xi, Shaobo; Liu, Xuehua; He, Ting; Tian, Lei; Wang, Wenhui; Sun, Rui; He, Weina; Zhang, Xuetong; Zhang, Jinping; Ni, Weihai; Zhou, Xiaochun

    2016-06-01

    ``Hot spots'' - a kind of highly active site, which are usually composed of some unique units, such as defects, interfaces, catalyst particles or special structures - can determine the performance of nanomaterials. In this paper, we study a model system, i.e. ``hot spots'' on a single Ag nanowire in the galvanic replacement reaction (GRR), by dark-field microscopy. The research reveals that electric charge can be released by the formation reaction of AgCl, and consequently the electrochemical potential on Ag nanowire drops. The electric charge could induce the reduction of Ag+ to form the ``hot spots'' on the nanowire during the GRR. The appearance probability of ``hot spots'' is almost even along the Ag nanowire, while it is slightly lower near the two ends. The spatial distance between adjacent ``hot spots'' is also controlled by the charge, and obeys a model based on Boltzmann distribution. In addition, the distance distribution here has an advantage in electron transfer and energy saving. Therefore, it's necessary to consider the functions of electric charge during the synthesis or application of nanomaterials.``Hot spots'' - a kind of highly active site, which are usually composed of some unique units, such as defects, interfaces, catalyst particles or special structures - can determine the performance of nanomaterials. In this paper, we study a model system, i.e. ``hot spots'' on a single Ag nanowire in the galvanic replacement reaction (GRR), by dark-field microscopy. The research reveals that electric charge can be released by the formation reaction of AgCl, and consequently the electrochemical potential on Ag nanowire drops. The electric charge could induce the reduction of Ag+ to form the ``hot spots'' on the nanowire during the GRR. The appearance probability of ``hot spots'' is almost even along the Ag nanowire, while it is slightly lower near the two ends. The spatial distance between adjacent ``hot spots'' is also controlled by the charge, and obeys a

  15. "Hot spots" growth on single nanowire controlled by electric charge.

    PubMed

    Xi, Shaobo; Liu, Xuehua; He, Ting; Tian, Lei; Wang, Wenhui; Sun, Rui; He, Weina; Zhang, Xuetong; Zhang, Jinping; Ni, Weihai; Zhou, Xiaochun

    2016-06-01

    "Hot spots" - a kind of highly active site, which are usually composed of some unique units, such as defects, interfaces, catalyst particles or special structures - can determine the performance of nanomaterials. In this paper, we study a model system, i.e. "hot spots" on a single Ag nanowire in the galvanic replacement reaction (GRR), by dark-field microscopy. The research reveals that electric charge can be released by the formation reaction of AgCl, and consequently the electrochemical potential on Ag nanowire drops. The electric charge could induce the reduction of Ag(+) to form the "hot spots" on the nanowire during the GRR. The appearance probability of "hot spots" is almost even along the Ag nanowire, while it is slightly lower near the two ends. The spatial distance between adjacent "hot spots" is also controlled by the charge, and obeys a model based on Boltzmann distribution. In addition, the distance distribution here has an advantage in electron transfer and energy saving. Therefore, it's necessary to consider the functions of electric charge during the synthesis or application of nanomaterials. PMID:27240743

  16. Laser-induced single point nanowelding of silver nanowires

    NASA Astrophysics Data System (ADS)

    Dai, Shuowei; Li, Qiang; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min

    2016-03-01

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  17. New Generation of Superconducting Nanowire Single-Photon Detectors

    NASA Astrophysics Data System (ADS)

    Goltsman, G. N.

    2015-09-01

    We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.

  18. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    SciTech Connect

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  19. Field emission from single-crystalline HfC nanowires

    SciTech Connect

    Yuan, Jinshi; Tang, Jie; Zhang Han; Shinya, Norio; Nakajima, Kiyomi; Qin, Lu-Chang

    2012-03-12

    Single HfC nanowire field emitter/electrode structures have been fabricated using nano-assembling and electron beam induced deposition. Field ion microscopy has been applied to study the atomic arrangement of facets formed on a field evaporation-modified HfC nanowire tip. Field evaporation and crystal form studies suggest that the {l_brace}111{r_brace} and {l_brace}110{r_brace} crystal planes have lower work functions, while the {l_brace}100{r_brace}, {l_brace}210{r_brace}, and {l_brace}311{r_brace} planes have higher work functions. Field emission measurement permits us to obtain that the work function of the {l_brace}111{r_brace} crystal plane is about 3.4 eV.

  20. Single-Crystal Diamond Nanowire Tips for Ultrasensitive Force Microscopy.

    PubMed

    Tao, Y; Degen, C L

    2015-12-01

    We report the fabrication, integration, and assessment of sharp diamond tips for ultrasensitive force microscopy experiments. Two types of tips, corresponding to the upper and lower halves of a diamond nanowire, were fabricated by top-down plasma etching from a single-crystalline substrate. The lower, surface-attached halves can be directly integrated into lithographically defined nanostructures, like cantilevers. The upper, detachable halves result in diamond nanowires with a tunable diameter (50-500 nm) and lengths of a few microns. Tip radii were around 10 nm and tip apex angles around 15°. We demonstrate the integration of diamond nanowires for use as scanning tips onto ultrasensitive pendulum-style silicon cantilevers. We find the noncontact friction and frequency jitter to be exceptionally low, with no degradation in the intrinsic mechanical quality factor (Q ≈ 130,000) down to tip-to-surface distances of about 10 nm. Our results are an encouraging step toward further improvement of the sensitivity and resolution of force-detected magnetic resonance imaging. PMID:26517172

  1. Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires

    SciTech Connect

    Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Choi, J. W.; Ji, H.; Kim, G. T.

    2011-12-23

    Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

  2. Optimised quantum hacking of superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  3. Optimised quantum hacking of superconducting nanowire single-photon detectors.

    PubMed

    Tanner, Michael G; Makarov, Vadim; Hadfield, Robert H

    2014-03-24

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack. PMID:24664022

  4. Direct electrical transport measurement on a single thermoelectric nanowire embedded in an alumina template.

    PubMed

    Ben Khedim, Meriam; Cagnon, Laurent; Garagnon, Christophe; Serradeil, Valerie; Bourgault, Daniel

    2016-04-28

    Electrical conductivity is a key parameter to increase the performance of thermoelectric materials. However, the measurement of such performance remains complex for 1D structures, involving tedious processing. In this study, we present a non-destructive, rapid and easy approach for the characterization of electrical conductivity of Bi2Te3 based single nanowires. By controlling the nanowire overgrowth, each nanowire emerges in the form of a micrometric hemisphere constituting a unique contact zone for direct nanoprobing. As nanowires need no preliminary preparation and remain in their template during measurement, we avoid oxidation effects and time-consuming processing. Electrical transport results show a low nanowire resistivity for compact nanowires obtained at low overpotential. Such values are comparable to bulk materials and thin films. This method not only confirmed its reliability, but it could also be adopted for other semiconducting or metallic electrodeposited nanowires. PMID:27086560

  5. Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

    SciTech Connect

    Florica, Camelia; Costas, Andreea; Boni, Andra Georgia; Negrea, Raluca; Preda, Nicoleta E-mail: encu@infim.ro; Pintilie, Lucian; Enculescu, Ionut E-mail: encu@infim.ro; Ion, Lucian

    2015-06-01

    High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.

  6. Recent advances in superconducting nanowire single photon detectors for single-photon imaging

    NASA Astrophysics Data System (ADS)

    Verma, V. B.; Allman, M. S.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Marsili, F.; Beyer, A.; Shaw, M. D.; Stern, J. A.; Mirin, R. P.; Nam, S. W.

    2016-05-01

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array, as well as characterization measurements are discussed.

  7. Fabrication of single crystalline, uniaxial single domain Co nanowire arrays with high coercivity

    NASA Astrophysics Data System (ADS)

    Ramazani, A.; Almasi Kashi, M.; Montazer, A. H.

    2014-03-01

    Whilst Co nanorods with high coercivity were synthesized during recent years, they did not achieve the same results as for Co nanowires embedded in solid templates. In the present work, Co nanowire arrays (NWAs) with high coercivity were successfully fabricated in porous aluminum oxide template under optimum conditions by using pulsed ac electrodeposition technique. Magnetic properties and crystalline characteristics of the nanowires were investigated by hysteresis loop measurements, first-order reversal curve (FORC) analysis, X-ray diffraction (XRD), and selected area electron diffraction (SAED) patterns. Hysteresis loop measurements showed high coercivity of about 4.8 kOe at room temperature together with optimum squareness of 1, resulting in an increase of the previous maximum coercivity for Co NWAs up to 45%. XRD and SAED patterns revealed a single crystalline texture along the [0002] direction, indicating the large magnetocrystalline anisotropy. On the other hand, FORC analysis confirmed a single domain structure for the Co NWAs. In addition, the reversal mechanism of the single crystalline, single domain Co NWAs was studied which resulted in the fixed easy axis with a coherent rotation. Accordingly, these nanowires might offer promising applications in high density bit patterned media and low power logic devices.

  8. Fabrication of single crystalline, uniaxial single domain Co nanowire arrays with high coercivity

    SciTech Connect

    Ramazani, A. Almasi Kashi, M.; Montazer, A. H.

    2014-03-21

    Whilst Co nanorods with high coercivity were synthesized during recent years, they did not achieve the same results as for Co nanowires embedded in solid templates. In the present work, Co nanowire arrays (NWAs) with high coercivity were successfully fabricated in porous aluminum oxide template under optimum conditions by using pulsed ac electrodeposition technique. Magnetic properties and crystalline characteristics of the nanowires were investigated by hysteresis loop measurements, first-order reversal curve (FORC) analysis, X-ray diffraction (XRD), and selected area electron diffraction (SAED) patterns. Hysteresis loop measurements showed high coercivity of about 4.8 kOe at room temperature together with optimum squareness of 1, resulting in an increase of the previous maximum coercivity for Co NWAs up to 45%. XRD and SAED patterns revealed a single crystalline texture along the [0002] direction, indicating the large magnetocrystalline anisotropy. On the other hand, FORC analysis confirmed a single domain structure for the Co NWAs. In addition, the reversal mechanism of the single crystalline, single domain Co NWAs was studied which resulted in the fixed easy axis with a coherent rotation. Accordingly, these nanowires might offer promising applications in high density bit patterned media and low power logic devices.

  9. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot.

    PubMed

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal; Patriarche, Gilles; Harmand, Jean-Christophe; Akopian, Nika; Zwiller, Val

    2016-02-10

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width. We notice that the emission spectra consist often of two peaks close in energy, which we explain with a comprehensive theory showing that the symmetry of the system plays a crucial role for the hole levels forming hybridized orbitals. Our results state that crystal phase quantum dots have promising quantum optical properties for single photon application and quantum optics. PMID:26806321

  10. Light-Induced Charge Transport within a Single Asymmetric Nanowire

    SciTech Connect

    Liu, Chong; Hwang, Yun Yeong; Jeong, Hoon Eui; Yang, Peidong

    2011-01-21

    Artificial photosynthetic systems using semiconductor materials have been explored for more than three decades in order to store solar energy in chemical fuels such as hydrogen. By mimicking biological photosynthesis with two light-absorbing centers that relay excited electrons in a nanoscopic space, a dual-band gap photoelectrochemical (PEC) system is expected to have higher theoretical energy conversion efficiency than a single band gap system. This work demonstrates the vectorial charge transport of photo-generated electrons and holes within a single asymmetric Si/TiO2 nanowire using Kelvin probe force microscopy (KPFM). Under UV illumination, higher surface potential was observed on the n-TiO₂ side, relative to the potential of the p-Si side, as a result of majority carriers’ recombination at the Si/TiO₂ interface. These results demonstrate a new approach to investigate charge separation and transport in a PEC system. This asymmetric nanowire heterostructure, with a dual band gap configuration and simultaneously exposed anode and cathode surfaces represents an ideal platform for the development of technologies for the generation of solar fuels, although better photoanode materials remain to be discovered.

  11. Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Masuda, Kohei; Moriyama, Satoshi; Morita, Yoshifumi; Komatsu, Katsuyoshi; Takagi, Tasuku; Hashimoto, Takayuki; Miki, Norihisa; Tanabe, Takasumi; Maki, Hideyuki

    2016-05-01

    Superconducting nanowires have attracted considerable attention due to their unique quantum-mechanical properties, as well as their potential as next-generation quantum nanodevices, such as single-photon detectors, phase-slip (PS) qubits, and other hybrid structures. In this study, we present the results of one-dimensional (1D) superconductivity in nanowires fabricated by coating suspended carbon nanotubes with a superconducting thin niobium nitride (NbN) film. In the resistance-temperature characteristic curves, hallmarks of 1D superconductivity with PS events are observed with unconventional negative magnetoresistance. We also confirm that a crossover occurs between thermal and quantum PSs as the temperature is lowered.

  12. CuInSe2 nanowires from facile chemical transformation of In2Se3 and their integration in single-nanowire devices.

    PubMed

    Schoen, David T; Peng, Hailin; Cui, Yi

    2013-04-23

    Nanowire solar cells are receiving a significant amount of attention for their potential to improve light absorption and charge collection in photovoltaics. Single-nanowire solar cells offer the ability to investigate performance limits for macroscale devices, as well as the opportunity for in-depth structural characterization and property measurement in small working devices. Copper indium selenide (CIS) is a material uniquely suited to these investigations. Not only could nanowire solar cells of CIS perhaps allow efficient macroscale photovoltaics to be fabricated while reducing the amount of CIS required, important for a system with possible resource limitations, but it is also a photovoltaic material for which fundamental understanding has been elusive. We here present a recipe for a scaled up vapor liquid solid based synthesis of CIS nanowires, in-depth material and property correlation of single crystalline CIS nanowires, and the first report of a single CIS nanowire solar cell. The synthesis was accomplished by annealing copper-coated In2Se3 nanowires at a moderate temperature of 350 °C, leading to solid-state reaction forming CIS nanowires. These nanowires are p-type with a resitivity of 6.5 Ωcm. Evidence is observed for a strong diameter dependence on the nanowire transport properties. The single-nanowire solar cells have an open-circuit voltage of 500 mV and a short-circuit current of 2 pA under AM 1.5 illumination. PMID:23413963

  13. Ion-track based single-channel templates for single-nanowire contacting

    NASA Astrophysics Data System (ADS)

    Chtanko, N.; Toimil-Molares, M. E.; Cornelius, T. W.; Dobrev, D.; Neumann, R.

    2005-07-01

    This work reports a procedure for the fabrication of membranes containing only one single channel with diameter down to 20 nm and with well-defined geometry. Foils of different types of polymer (polyethylene terephthalate (PET) and polycarbonate (PC)) were tested with respect to their suitability as ion-track template for single-nanowire growth. Membranes with one pore were created by the track-etching technique. The pore size was characterized by electrical conductivity measurements in 1 M KCl. Furthermore, we developed also a method for the preparation and electrical contacting of single metallic nanowires. Cylindrical single pores were filled with Bi by electrochemical deposition. The resulting wires, remaining embedded in the polymer foil, are very suitable for measurements of electrical resistance as a function of parameters such as wire diameter and temperature.

  14. Germanium-catalyzed growth of single-crystal GaN nanowires

    NASA Astrophysics Data System (ADS)

    Saleem, Umar; Wang, Hong; Peyrot, David; Olivier, Aurélien; Zhang, Jun; Coquet, Philippe; Ng, Serene Lay Geok

    2016-04-01

    We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor-Liquid-Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.

  15. Localized ultraviolet photoresponse in single bent ZnO micro/nanowires

    SciTech Connect

    Guo Wen; Yang Ya; Qi Junjie; Zhao Jing; Zhang Yue

    2010-09-27

    The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.

  16. Optical properties of single ZnTe nanowires grown at low temperature

    SciTech Connect

    Artioli, A.; Stepanov, P.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Tatarenko, S.; Ferrand, D.; Cibert, J.; Inst NEEL, CNRS, F-38042 Grenoble ; Rueda-Fonseca, P.; Inst NEEL, CNRS, F-38042 Grenoble; INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble ; Bellet-Amalric, E.; Kheng, K.

    2013-11-25

    Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

  17. Cold welding of copper nanowires with single-crystalline and twinned structures: A comparison study

    NASA Astrophysics Data System (ADS)

    Huang, Rao; Shao, Gui-Fang; Wen, Yu-Hua

    2016-09-01

    In this article, molecular simulations were adopted to explore the cold welding processes of copper nanowires with both single-crystalline and fivefold twinned structures. It was verified that the twinned nanowires exhibited enhanced strength but lowered elastic limit and ductility. Both nanowires could be successfully welded through rather small loadings, although their stress-strain responses toward compression were different. Meanwhile, more stress was accumulated in the twinned nanowire due to repulsive force of the twin boundaries against the nucleation and motions of dislocations. Moreover, by characterizing the structure evolutions in the welding process, it can be ascertained that perfect atomic order was finally built at the weld region in both nanowires. This comparison study will be of great importance to future mechanical processing of metallic nanowires.

  18. Single-crystal superconducting nanowires of NbSe{sub 2} fabricated by reactive plasma etching

    SciTech Connect

    Mills, Shaun A.; Staley, Neal E.; Wisser, Jacob J.; Shen, Chenyi; Xu, Zhuan; Liu, Ying

    2014-02-03

    We present the preparation and measurements of nanowires of single-crystal NbSe{sub 2}. These nanowires were prepared on ultrathin (≲10 nm) flakes of NbSe{sub 2} mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30 nm and cross-sectional areas as low as 270 nm{sup 2} were measured.

  19. Nanomanipulation and electrical behaviour of a single gold nanowire using in-situ SEM-FIB-nanomanipulators

    NASA Astrophysics Data System (ADS)

    Peng, Y.; Luxmoore, I.; Forster, M. D.; Cullis, A. G.; Inkson, B. J.

    2008-08-01

    Gold nanowires were successfully fabricated by a DC electrodeposition technique into Anodic Aluminium Oxide (AAO) templates. The microstructure of 55nm gold nanowires released from AAO templates was observed by SEM and TEM to be polycrystalline, with a bamboo-type structure and grain sizes 20nm to several micrometers. Individual gold nanowires were picked up from bundles of gold nanowires using a super-sharp W tip attached to an in-situ Kleindiek nanomanipulator fitted in a SEM-FIB. The picked-up gold nanowires were then deposited onto a silicon wafer, or connected between two nanomanipulator tips, to fabricate single nanowire nano-circuits for electrical testing. The electrical properties of single manipulated nanowires are compared to that of bundles of gold nanowires for the two circuit types. The lowest resistance is achieved by connecting the gold nanowires between two FIB-milled tungsten tips.

  20. Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires

    SciTech Connect

    Ferrari, Simone; Kahl, Oliver; Kovalyuk, Vadim; Goltsman, Gregory N.; Korneev, Alexander; Pernice, Wolfram H. P.

    2015-04-13

    We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.

  1. Electrical conductivity of single CdS nanowire synthesized by aqueous chemical growth

    NASA Astrophysics Data System (ADS)

    Long, Yunze; Chen, Zhaojia; Wang, Wenlong; Bai, Fenglian; Jin, Aizi; Gu, Changzhi

    2005-04-01

    In this Letter, we report on the temperature-dependent conductivity and current-voltage curve of a single CdS nanowire, which was synthesized by a simple aqueous chemical growth method. A pair of platinum microleads was fabricated on the single CdS nanowire by focused ion-beam deposition. The room-temperature conductivity and the band gap of the single CdS wire are 0.82Ω-1cm-1 and 0.055eV, respectively. When the applied electric field is larger than 1090Vcm-1, the CdS nanowire shows a nonlinear I-V curve at room temperature.

  2. Single quantum dot (QD) manipulation on nanowire using dielectrophoretic (DEP) force

    NASA Astrophysics Data System (ADS)

    Kim, J.; Lee, S. Y.; Suh, J.-K. F.; Park, J. H.; Shin, H. J.

    2011-02-01

    Au nanowires of 100 nm, 200nm and 400 nm widths with micro scale Au electrode were fabricated as electrodes to apply high electric field gradient for strong DEP force within the nanometer range. Au nanowires were fabricated on a silicon dioxide (SiO2) using lift-off process after e-beam lithography and e-beam evaporation. E-beam resister (ER) was patterned and a 50 nm thick Au layer. Photo resister (PR) was patterned to make Au microelectrode and did lift-off process. The Au nanowires with microelectrode were covered with SiO2 layer deposited with PECVD resulting in 1 um thick. Opened end of gold nanowires, the target surface for QD immobilization, were formed using etching processes. Single QD immobilization on the nanowire end-facet was accomplished through positive DEP force. Sine wave of 8 Vpp intensity and 3 MHz frequency was applied and it induced electric field of 108 V/m intensity and electric field gradient around Au nanowire to make strong positive DEP. Optical analysis confirmed the attachment of single QD on the nanowire. A single 25 nm diameter QD was manipulated on 100 nm, 200 nm and 400 nm width nanowires when 8 Vpp, 3 MHz sine wave was applied.

  3. Growth of single-crystalline cobalt silicide nanowires and their field emission property

    PubMed Central

    2013-01-01

    In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters. PMID:23819795

  4. Electrical properties of single CdTe nanowires

    PubMed Central

    Matei, Elena; Florica, Camelia; Costas, Andreea; Toimil-Molares, María Eugenia

    2015-01-01

    Summary Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties. PMID:25821685

  5. Probing the low thermal conductivity of single-crystalline porous Si nanowires

    NASA Astrophysics Data System (ADS)

    Zhao, Yunshan; Lina Yang Collaboration; Lingyu Kong Collaboration; Baowen Li Collaboration; John T L Thong Collaboration; Kedar Hippalgaonkar Collaboration

    Pore-like structures provide a novel way to reduce the thermal conductivity of silicon nanowires, compared to both smooth-surface VLS nanowires and rough EE nanowires. Because of enhanced phonon scattering with interface and decrease in phonon transport path, the porous nanostructures show reduction in thermal conductance by few orders of magnitude. It proves to be extremely challenging to evaluate porosity accurately in an experimental manner and further understand its effect on thermal transport. In this study, we use the newly developed electron-beam based micro-electrothermal device technique to study the porosity dependent thermal conductivity of mesoporous silicon nanowires that have single-crystalline scaffolding. Based on the Casino simulation, the power absorbed by the nanowire, coming from the loss of travelling electron energy, has a linear relationship with it cross section. The relationship has been verified experimentally as well. Monte Carlo simulation is carried out to theoretically predict the thermal conductivity of silicon nanowires with a specific value of porosity. These single-crystalline porous silicon nanowires show extremely low thermal conductivity, even below the amorphous limit. These structures together with our experimental techniques provide a particularly intriguing platform to understand the phonon transport in nanoscale and aid the performance improvement in future nanowires-based devices.

  6. Tuning the magnetic anisotropy of Co-Ni nanowires: comparison between single nanowires and nanowire arrays in hard-anodic aluminum oxide membranes.

    PubMed

    Vega, V; Böhnert, T; Martens, S; Waleczek, M; Montero-Moreno, J M; Görlitz, D; Prida, V M; Nielsch, K

    2012-11-23

    Co(x)Ni(1-x) alloy nanowires with varying Co content (0 ≤ x ≤ 0.95), having a diameter of 130 nm and length of around 20 μm, are synthesized by template-assisted electrodeposition into the nanopores of SiO(2) conformal coated hard-anodic aluminum oxide membranes. The magneto-structural properties of both single isolated nanowires and hexagonally ordered nanowire arrays of Co-Ni alloys are systematically studied by means of magneto-optical Kerr effect magnetometry and vibrating sample magnetometry, respectively, allowing us to compare different alloy compositions and to distinguish between the magnetostatic and magnetocrystalline contributions to the effective magnetic anisotropy for each system. The excellent tunable soft magnetic properties and magnetic bistability exhibited by low Co content Co-Ni nanowires indicate that they might become the material of choice for the development of nanostructured magnetic systems and devices as an alternative to Fe-Ni alloy based systems, being chemically more robust. Furthermore, Co contents higher than 51 at.% allow us to modify the magnetic behavior of Co-rich nanowires by developing well controlled magnetocrystalline anisotropy, which is desirable for data storage applications. PMID:23095457

  7. Characterization of superconducting nanowire single-photon detector with artificial constrictions

    SciTech Connect

    Zhang, Ling; Liu, Dengkuan; Wu, Junjie; He, Yuhao; Lv, Chaolin; You, Lixing Zhang, Weijun; Zhang, Lu; Liu, Xiaoyu; Wang, Zhen Xie, Xiaoming

    2014-06-15

    Statistical studies on the performance of different superconducting nanowire single-photon detectors (SNSPDs) on one chip suggested that random constrictions existed in the nanowire that were barely registered by scanning electron microscopy. With the aid of advanced e-beam lithography, artificial geometric constrictions were fabricated on SNSPDs as well as single nanowires. In this way, we studied the influence of artificial constrictions on SNSPDs in a straight forward manner. By introducing artificial constrictions with different wire widths in single nanowires, we concluded that the dark counts of SNSPDs originate from a single constriction. Further introducing artificial constrictions in SNSPDs, we studied the relationship between detection efficiency and kinetic inductance and the bias current, confirming the hypothesis that constrictions exist in SNSPDs.

  8. Rational Concept for Designing Vapor-Liquid-Solid Growth of Single Crystalline Metal Oxide Nanowires.

    PubMed

    Klamchuen, Annop; Suzuki, Masaru; Nagashima, Kazuki; Yoshida, Hideto; Kanai, Masaki; Zhuge, Fuwei; He, Yong; Meng, Gang; Kai, Shoichi; Takeda, Seiji; Kawai, Tomoji; Yanagida, Takeshi

    2015-10-14

    Metal oxide nanowires hold great promise for various device applications due to their unique and robust physical properties in air and/or water and also due to their abundance on Earth. Vapor-liquid-solid (VLS) growth of metal oxide nanowires offers the high controllability of their diameters and spatial positions. In addition, VLS growth has applicability to axial and/or radial heterostructures, which are not attainable by other nanowire growth methods. However, material species available for the VLS growth of metal oxide nanowires are substantially limited even though the variety of material species, which has fascinating physical properties, is the most interesting feature of metal oxides. Here we demonstrate a rational design for the VLS growth of various metal oxide nanowires, based on the "material flux window". This material flux window describes the concept of VLS nanowire growth within a limited material flux range, where nucleation preferentially occurs only at a liquid-solid interface. Although the material flux was previously thought to affect primarily the growth rate, we experimentally and theoretically demonstrate that the material flux is the important experimental variable for the VLS growth of metal oxide nanowires. On the basis of the material flux window concept, we discover novel metal oxide nanowires, composed of MnO, CaO, Sm2O3, NiO, and Eu2O3, which were previously impossible to form via the VLS route. The newly grown NiO nanowires exhibited stable memristive properties superior to conventional polycrystalline devices due to the single crystallinity. Thus, this VLS design route offers a useful guideline for the discovery of single crystalline nanowires that are composed of functional metal oxide materials. PMID:26372675

  9. Ultrafast photocurrents and THz generation in single InAs-nanowires

    NASA Astrophysics Data System (ADS)

    Holleitner, Alexander; Erhard, Nadine; Abstreiter, Gerhard; Koblmuller, Gregor

    2013-03-01

    Conventional scanning photocurrent microscopy experiments on semiconductor nanowires are typically limited to timescales exceeding 10 ps. Yet, it is known from optical experiments that carrier relaxation and transport processes can occur on much faster timescales in such wires. We therefore apply a recently developed pump-probe photocurrent spectroscopy based on coplanar striplines to investigate the photocurrent dynamics of single GaAs- and InAs-nanowires with a picosecond time-resolution. The ultrafast photocurrent response of the nanowires is sampled in the time-domain with the help of Auston switches. We discuss data on single InAs-nanowires which are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, we show that THz radiation is generated in the optically excited InAs-nanowires, which we interpret in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources. Financial support by the ERC grant NanoREAL is acknowledged.

  10. Room temperature GaAsSb single nanowire infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Li, Ziyuan; Yuan, Xiaoming; Fu, Lan; Peng, Kun; Wang, Fan; Fu, Xiao; Caroff, Philippe; White, Thomas P.; Tan, Hark Hoe; Jagadish, Chennupati

    2015-11-01

    Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ˜12 cm2 V-1 s-1). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ˜1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 109 (6.55 × 108) {{cm}}\\sqrt{{{Hz}}}/{{W}} were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.

  11. Electrical transport properties of single-crystal Al nanowires.

    PubMed

    Brunbauer, Florian M; Bertagnolli, Emmerich; Majer, Johannes; Lugstein, Alois

    2016-09-23

    Single-crystal Al nanowires (NWs) were fabricated by thermally induced substitution of vapor-liquid-solid grown Ge NWs by Al. The resistivity of the crystalline Al (c-Al) NWs was determined to be ρ = (131 ± 27) × 10(-9) Ω m, i.e. approximately five times higher than for bulk Al, but they withstand remarkably high current densities of up to 1.78 × 10(12) A m(-2) before they ultimately melt due to Joule heating. The maximum current density before failure correlates with the NW diameter, with thinner NWs tolerating significantly higher current densities due to efficient heat dissipation and the reduced lattice heating in structures smaller than the electron-phonon scattering length. The outstanding current-carrying capacity of the c-Al NWs clearly exceeds those of common conductors and surpasses requirements for metallization of future high-performance devices. The linear temperature coefficient of the resistance of c-Al NWs appeared to be lower than for bulk Al and a transition to a superconducting state in c-Al NWs was observed at a temperature of 1.46 K. PMID:27533003

  12. Charge transport in single CuO nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Junnan; Yin, Bo; Wu, Fei; Myung, Yoon; Banerjee, Parag

    2014-11-01

    Charge transport in single crystal, p-type cupric oxide (CuO) nanowire (NW) was studied through temperature based (120 K-400 K) current-voltage measurements. CuO NW with a diameter of 85 nm was attached to Au electrodes 2.25 μm apart, using dielectrophoresis. At low electrical field (<0.89 × 103 V/cm), an ohmic conduction is observed with an activation energy of 272 meV. The injected electrons fill traps with an average energy, ET = 26.6 meV and trap density, NT = 3.4 × 1015 cm-3. After the traps are saturated, space charge limited current mechanism becomes dominant. For 120 K ≤ T ≤ 210 K phonon scattering limits mobility. For T ≥ 220 K, a thermally activated mobility is observed and is attributed to small polaron hopping with an activation energy of 44 meV. This mechanism yields a hole mobility of 0.0015 cm2/V s and an effective hole concentration of 4 × 1018 cm-3 at 250 K.

  13. Electromigration in focused ion beam deposited tungsten single nanowires

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    As the focused ion beam induced deposited (FIBID) nanowires (NWs) of W, Pt are being used in nanoelectronic technology to connect individual nanodevices, repairing damaged interconnects in integrated circuit (IC), electromigration study in FIBID-NWs has become essential. Briefly, when a thin conductor, like metallic Al, Cu interconnects in an IC chip carry quite high current density ~1012 A/m2, ions or atoms start migrating. Such migration causes void and hillock formation leading to interconnect discontinuity, short circuit and ultimately IC failure. Our electromigration study in single FIBID-NWs of W reveals that failure in NWs of width and thickness ~100 nm occurs typically at 1011 A/m2. Most notably, void and hillock always form in opposite polarity compared to typical metallic NWs. Such distinctly new outcome is explained via electromigration driven by direct force (ionic charge*electric field) opposed to wind force driven migration observed in metallic NWs. As FIBID-NWs are composite in nature, different species (e.g., Ga, W and C) migrate with different degree and direction depending on their oxidation state, leading to redistribution of species across NW length and formation of a Ga rich hillock. S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt Lake, Kolkata-98, India.

  14. Photovoltaic effect and charge storage in single ZnO nanowires

    SciTech Connect

    Liao Zhimin; Xu Jun; Zhang Jingmin; Yu Dapeng

    2008-07-14

    Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a current at zero bias after switching off light illumination, which is ascribed to the charge storage effect in single ZnO nanowires. The underlying mechanisms related to the photovoltaic effect and charge storage were discussed.

  15. Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays.

    PubMed

    Keplinger, Mario; Grifone, Raphael; Greil, Johannes; Kriegner, Dominik; Persson, Johan; Lugstein, Alois; Schülli, Tobias; Stangl, Julian

    2016-02-01

    Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different illumination positions along the nanowire length results in corresponding strain components as well as the nanowire's tilting and bending. By using these findings we determined the complete strain state with the help of finite element modelling. The resulting information provides us with the possibility of evaluating the validity of the strain investigations following from Raman scattering experiments which are based on the assumption of purely uniaxial strain. PMID:26753909

  16. Fabrication of enzyme-degradable and size-controlled protein nanowires using single particle nano-fabrication technique

    NASA Astrophysics Data System (ADS)

    Omichi, Masaaki; Asano, Atsushi; Tsukuda, Satoshi; Takano, Katsuyoshi; Sugimoto, Masaki; Saeki, Akinori; Sakamaki, Daisuke; Onoda, Akira; Hayashi, Takashi; Seki, Shu

    2014-04-01

    Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules, giving size-controlled protein nanowires with an ultra-high aspect ratio of over 1,000. Degradation of the human serum albumin nanowires was examined using trypsin. The biotinylated human serum albumin nanowires bound avidin, demonstrating the high affinity of the nanowires. Human serum albumin-avidin hybrid nanowires were also fabricated from a solid state mixture and exhibited good mechanical strength in phosphate-buffered saline. The biotinylated human serum albumin nanowires can be transformed into nanowires exhibiting a biological function such as avidin-biotinyl interactions and peroxidase activity. The present technique is a versatile platform for functionalizing the surface of any protein molecule with an extremely large surface area.

  17. Microchip for the Measurement of Seebeck Coefficients of Single Nanowires

    NASA Astrophysics Data System (ADS)

    Völklein, F.; Schmitt, M.; Cornelius, T. W.; Picht, O.; Müller, S.; Neumann, R.

    2009-07-01

    Bismuth nanowires were electrochemically grown in ion track-etched polycarbonate membranes. Micromachining and microlithography were employed to realize a newly developed microchip for Seebeck coefficient measurements on individual nanowires. By anisotropic etching of a (100) Si wafer, an 800-nm-thick SiO2/Si3N4 membrane was prepared in the chip center. The low thermal conductivity of the membrane is crucial to obtain the required temperature difference Δ T along the nanowire. The wire is electrically contacted to thin metal pads which are patterned by a new method of microscopic exposure of photoresist and a lift-off process. A Δ T between the two pairs of contact pads, located on the membrane, is established by a thin-film heater. Applying the known Seebeck coefficient of a reference film, the temperature difference at this gap is determined. Using Δ T and the measured Seebeck voltage U of the nanowire, its Seebeck coefficient can be calculated.

  18. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen.

    PubMed

    Cardoza-Contreras, Marlene N; Romo-Herrera, José M; Ríos, Luis A; García-Gutiérrez, R; Zepeda, T A; Contreras, Oscar E

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H₂ pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H₂. PMID:26690158

  19. Bleach-Imaged Plasmon Propagation (BlIPP) in Single Gold Nanowires

    SciTech Connect

    Solis, David; Chang, Wei-Shun; Khanal, Bishnu P.; Bao, Kui; Nordlander, Peter; Zubarev, Eugene R.; Link, Stephan

    2010-08-13

    Here, we present a novel approach to visualize propagating surface plasmon polaritons through plasmon-exciton interactions between single gold nanowires and a thin film of a fluorescent polymer. A plasmon polariton was launched by exciting one end of a single gold nanowire with a 532 nm laser. The local near-field of the propagating plasmon modes caused bleaching of the polymer emission. The degree of photobleaching along the nanowire could be correlated with the propagation distance of the surface plasmon polaritons. Using this method of bleach-imaged plasmon propagation (BlIPP), we determined a plasmon propagation distance of 1.8 ± 0.4 μm at 532 nm for chemically grown gold nanowires. Our results are supported by finite difference time domain electromagnetic simulations.

  20. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen

    PubMed Central

    Cardoza-Contreras, Marlene N.; Romo-Herrera, José M.; Ríos, Luis A.; García-Gutiérrez, R.; Zepeda, T. A.; Contreras, Oscar E.

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H2 pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H2. PMID:26690158

  1. Space-and-time-resolved spectroscopy of single GaN nanowires

    SciTech Connect

    Upadhya, Prashanth C.; Martinez, Julio A.; Li, Qiming; Wang, George T.; Swartzentruber, Brian S.; Taylor, Antoinette J.; Prasankumar, Rohit P.

    2015-06-29

    Gallium nitride nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. Here, we present ultrafast optical microscopic measurements on single GaN nanowires. Our experiments, performed while varying the light polarization, excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.

  2. Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

    PubMed

    Yang, Chen; Barrelet, Carl J; Capasso, Federico; Lieber, Charles M

    2006-12-01

    We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems. PMID:17163733

  3. Versatile method for template-free synthesis of single crystalline metal and metal alloy nanowires

    NASA Astrophysics Data System (ADS)

    Scott, John A.; Totonjian, Daniel; Martin, Aiden A.; Tran, Toan Trong; Fang, Jinghua; Toth, Milos; McDonagh, Andrew M.; Aharonovich, Igor; Lobo, Charlene J.

    2016-01-01

    Metal and metal alloy nanowires have applications ranging from spintronics to drug delivery, but high quality, high density single crystalline materials have been surprisingly difficult to fabricate. Here we report a versatile, template-free, self-assembly method for fabrication of single crystalline metal and metal alloy nanowires (Co, Ni, NiCo, CoFe, and NiFe) by reduction of metal nitride precursors formed in situ by reaction of metal salts with a nitrogen source. Thiol reduction of the metal nitrides to the metallic phase at 550-600 °C results in nanowire growth. In this process, sulfur acts as a uniaxial structure-directing agent, passivating the surface of the growing nanowires and preventing radial growth. The versatility of the method is demonstrated by achieving nanowire growth from gas-phase, solution-phase or a combination of gas- and solution-phase precursors. The fabrication method is suited to large-area CVD on a wide range of solid substrates.Metal and metal alloy nanowires have applications ranging from spintronics to drug delivery, but high quality, high density single crystalline materials have been surprisingly difficult to fabricate. Here we report a versatile, template-free, self-assembly method for fabrication of single crystalline metal and metal alloy nanowires (Co, Ni, NiCo, CoFe, and NiFe) by reduction of metal nitride precursors formed in situ by reaction of metal salts with a nitrogen source. Thiol reduction of the metal nitrides to the metallic phase at 550-600 °C results in nanowire growth. In this process, sulfur acts as a uniaxial structure-directing agent, passivating the surface of the growing nanowires and preventing radial growth. The versatility of the method is demonstrated by achieving nanowire growth from gas-phase, solution-phase or a combination of gas- and solution-phase precursors. The fabrication method is suited to large-area CVD on a wide range of solid substrates. Electronic supplementary information (ESI) available

  4. Simultaneous high-resolution scanning Bragg contrast and ptychographic imaging of a single solar cell nanowire

    PubMed Central

    Wallentin, Jesper; Wilke, Robin N.; Osterhoff, Markus; Salditt, Tim

    2015-01-01

    Simultaneous scanning Bragg contrast and small-angle ptychographic imaging of a single solar cell nanowire are demonstrated, using a nanofocused hard X-ray beam and two detectors. The 2.5 µm-long nanowire consists of a single-crystal InP core of 190 nm diameter, coated with amorphous SiO2 and polycrystalline indium tin oxide. The nanowire was selected and aligned in real space using the small-angle scattering of the 140 × 210 nm X-ray beam. The orientation of the nanowire, as observed in small-angle scattering, was used to find the correct rotation for the Bragg condition. After alignment in real space and rotation, high-resolution (50 nm step) raster scans were performed to simultaneously measure the distribution of small-angle scattering and Bragg diffraction in the nanowire. Ptychographic reconstruction of the coherent small-angle scattering was used to achieve sub-beam spatial resolution. The small-angle scattering images, which are sensitive to the shape and the electron density of all parts of the nanowire, showed a homogeneous profile along the nanowire axis except at the thicker head region. In contrast, the scanning Bragg diffraction microscopy, which probes only the single-crystal InP core, revealed bending and crystalline inhomogeneity. Both systematic and non-systematic real-space movement of the nanowire were observed as it was rotated, which would have been difficult to reveal only from the Bragg scattering. These results demonstrate the advantages of simultaneously collecting and analyzing the small-angle scattering in Bragg diffraction experiments. PMID:26664342

  5. Cross-stacked single-crystal organic nanowire p-n nanojunction arrays by nanotransfer printing.

    PubMed

    Park, Kyung Sun; Lee, Ki Seok; Kang, Chan-Mo; Baek, Jangmi; Han, Kyu Seok; Lee, Changhee; Koo Lee, Yong-Eun; Kang, Youngjong; Sung, Myung Mo

    2015-01-14

    We fabricated cross-stacked organic p-n nanojunction arrays made of single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p-type and n-type semiconductors, respectively, by using a nanotransfer printing technique. Single-crystal C60 nanowires were synthesized inside nanoscale channels of a mold and directly transferred onto a desired position of a flexible substrate by a lubricant liquid layer. In the consecutive printing process, single-crystal TIPS-PEN nanowires were grown in the same way and then perpendicularly aligned and placed onto the C60 nanowire arrays, resulting in a cross-stacked single-crystal organic p-n nanojunction array. The cross-stacked single-crystal TIPS-PEN/C60 nanowire p-n nanojunction devices show rectifying behavior with on/off ratio of ∼ 13 as well as photodiode characteristic with photogain of ∼ 2 under a light intensity of 12.2 mW/cm(2). Our study provides a facile, solution-processed approach to fabricate a large-area array of organic crystal nanojunction devices in a desired arrangement for future nanoscale electronics. PMID:25470380

  6. Anisotropic third-order optical nonlinearity of a single ZnO micro/nanowire.

    PubMed

    Wang, Kai; Zhou, Jun; Yuan, Longyan; Tao, Yuting; Chen, Jian; Lu, Peixiang; Wang, Zhong Lin

    2012-02-01

    We report a systematic study about the anisotropic third-order optical nonlinearity of a single ZnO micro/nanowire by using the Z-scan method with a femtosecond laser. The two-photon absorption coefficient and nonlinear refraction index, which are measured as a function of polarization angle and sample orientation angle, exhibit oscillation curves with a period of π/2, indicating a highly polarized optical nonlinearity of the ZnO micro/nanowire. Further studies show that the polarized optical nonlinearity of the ZnO micro/nanowire is highly size-dependent. The results indicate that ZnO nanowire has great potential in applications of nanolasers, all-optical switching and polarization-sensitive photodetectors. PMID:22214490

  7. Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires

    NASA Astrophysics Data System (ADS)

    Erhard, N.; Zenger, S.; Morkötter, S.; Rudolph, D.; Weiss, M.; Krenner, H. J.; Karl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.; Holleitner, A. W.

    2015-10-01

    We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.

  8. Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires.

    PubMed

    Erhard, N; Zenger, S; Morkötter, S; Rudolph, D; Weiss, M; Krenner, H J; Karl, H; Abstreiter, G; Finley, J J; Koblmüller, G; Holleitner, A W

    2015-10-14

    We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs core-shell nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photothermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors. PMID:26356189

  9. Bragg coherent x-ray diffractive imaging of a single indium phosphide nanowire

    NASA Astrophysics Data System (ADS)

    Dzhigaev, D.; Shabalin, A.; Stankevič, T.; Lorenz, U.; Kurta, R. P.; Seiboth, F.; Wallentin, J.; Singer, A.; Lazarev, S.; Yefanov, O. M.; Borgström, M.; Strikhanov, M. N.; Samuelson, L.; Falkenberg, G.; Schroer, C. G.; Mikkelsen, A.; Feidenhans‘l, R.; Vartanyants, I. A.

    2016-06-01

    Three-dimensional (3D) Bragg coherent x-ray diffractive imaging (CXDI) with a nanofocused beam was applied to quantitatively map the internal strain field of a single indium phosphide nanowire. The quantitative values of the strain were obtained by pre-characterization of the beam profile with transmission ptychography on a test sample. Our measurements revealed the 3D strain distribution in a region of 150 nm below the catalyst Au particle. We observed a slight gradient of the strain in the range of ±0.6% along the [111] growth direction of the nanowire. We also determined the spatial resolution in our measurements to be about 10 nm in the direction perpendicular to the facets of the nanowire. The CXDI measurements were compared with the finite element method simulations and show a good agreement with our experimental results. The proposed approach can become an effective tool for in operando studies of the nanowires.

  10. Graphene Enhances Li Storage Capacity of Porous Single-crystalline Silicon Nanowires

    SciTech Connect

    Wang, X.; Han, W.

    2010-12-01

    We demonstrated that graphene significantly enhances the reversible capacity of porous silicon nanowires used as the anode in Li-ion batteries. We prepared our experimental nanomaterials, viz., graphene and porous single-crystalline silicon nanowires, respectively, using a liquid-phase graphite exfoliation method and an electroless HF/AgNO{sub 3} etching process. The Si porous nanowire/graphene electrode realized a charge capacity of 2470 mAh g{sup -1} that is much higher than the 1256 mAh g{sup -1} of porous Si nanowire/C-black electrode and 6.6 times the theoretical capacity of commercial graphite. This relatively high capacity could originate from the favorable charge-transportation characteristics of the combination of graphene with the porous Si 1D nanostructure.

  11. Temperature dependent electrical transport in single Ge nanowires near insulator-metal transition

    NASA Astrophysics Data System (ADS)

    Raychaudhuri, Arup Kumar; Seth, Shaili; Das, Kaustuv

    We report low temperature (4K <= T <= 300K) electrical transport in single strands of Germanium Nanowires of radius well below 50 nm. The nanowires, grown from vapour phase with Au catalyst have carrier concentrations ranging from intrinsic to near the insulator-metal transition boundary. The nanowires were characterized extensively by High Resolution Transmission Electron Microscope and established their crystalline quality. A single nanowire dispersed on a Si/SiO2 substrate was connected by Cr/Au contacts made by electron beam lithography in 2-probe / 4-probe configurations. The undoped nanowires have a room temperature resistivity (ρ) of 2 ohm.cm or more (estimated carrier concentration ~1015/cm3) and below the 25K (where it shows carrier freeze out) the ρ rises to high value of 35 ohm.cm. For nanowires with ρ <= .01 ohm.cm at 300K , low temperature ρ becomes finite, signaling transition to a metallic state with negative temperature co-efficient of ρ. The critical composition for the insulator-metal transition is more than an order higher than that observed in the bulk. At low T (<25K) resistivity data in this regime can be fitted to weak-localization form ρ =ρ0 - aTp/2 with ρ0 the NW's ~ 0.5-3.5 mohm.cm, with the exponent p ~ 3-4 as expected from theoretical predictions. Acknowldge Financial Support from Department od Science and Technology, Government of India for Sponsored Project.

  12. Single domain to vortex state transition in multilayered cobalt/copper nanowires

    NASA Astrophysics Data System (ADS)

    Wong, Jared; Greene, Peter; Dumas, Randy K.; Liu, Kai

    2008-08-01

    Multilayered magnetic nanowires provide ideal platforms for nanomagnetism and spin-transport studies. They exhibit complex magnetization reversal behaviors as dimensions of the magnetic components are varied, which are difficult to probe since the magnetic entities are buried inside the nanowires. We have captured magnetic and magnetoresistance "fingerprints" of Co nanodiscs in Co/Cu multilayered nanowires as they undergo a single domain to vortex state transition, using a first-order reversal curve (FORC) method. The Co/Cu multilayered nanowires have been synthesized by pulsed electrodeposition into nanoporous polycarbonate membranes. In 50 nm diameter nanowires of [Co(5nm)/Cu(8nm)]400, a 10% magnetoresistance effect is observed at 300 K. In 200 nm diameter nanowires, the magnetic configurations can be tuned by adjusting the Co nanodisc aspect ratio. The thinnest nanodiscs exhibit single domain behavior. The thicker ones exhibit vortex states, where the nucleation and annihilation of the vortices are manifested as butterfly-like features in the FORC distributions. The magnetoresistance effect shows different characteristics, which correspond to the different magnetic configurations of the Co nanodiscs.

  13. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  14. Direct Observation of the Collision of Single Pt Nanoparticles onto Single-Crystalline Gold Nanowire Electrodes.

    PubMed

    Shin, Changhwan; Bae, Hyeonhu; Kang, Mijeong; Kim, Bongsoo; Kwon, Seong Jung

    2016-08-01

    We observed the collision of single Pt nanoparticles (NPs) onto an Au nanowire (NW) electrode by using electrocatalytic amplification. Previously, such observations had typically been performed by using a microscale disk-type ultramicroelectrode (UME). The use of a NW electrode decreased the background noise current and provided a shielding effect, owing to adsorption of the NPs onto the insulating sheath. Therefore, the transient current signal that was caused by the collision of single NPs could be more clearly distinguished from the background current by using a NW electrode instead of a UME. Furthermore, the use of a NW electrode increased the collisional frequency and the magnitude of the transient current signal. The experimental data were analyzed by using a theoretical model and a random walk simulation model. PMID:27305586

  15. Formation of nanowires via single particle-triggered linear polymerization of solid-state aromatic molecules.

    PubMed

    Horio, Akifumi; Sakurai, Tsuneaki; Lakshmi, G B V S; Kumar Avasthi, Devesh; Sugimoto, Masaki; Yamaki, Tetsuya; Seki, Shu

    2016-08-11

    Nanowires occupy a prestigious place in nanoelectronics, nanomechanics, and biomimetics. Although there are notable methods to grow nanowires via self-assembly, there is a key drawback in the need to find out the specific conditions appropriate for each system. In this sense, universal techniques to fabricate such nanowires from various organic materials have been sought for the continued progress of the related research field. Here we report one of the promising and facile methodologies to quantitatively produce nanowires with controlled geometrical parameters. In this method, referred to as "Single Particle-Triggered Linear Polymerization (STLiP)", organic thin films on a supporting substrate were irradiated with high-energy charged particles, accelerated by particle accelerators. Each particle penetrates from the top of the films to the substrate while gradually releasing kinetic energy along its trajectory (ion track), generating reactive intermediates such as radical species that eventually induce propagation reactions. The resulting polymerized products were integrated into nanowires with uniform diameter and length that can be isolated via development with appropriate organic solvents. Considering the widely applicable nature of STLiP to organic materials, the present technique opens a new door for access to a number of functional nanowires and their assembly. PMID:27355341

  16. Synthesis and characterization of single-crystalline zinc tin oxide nanowires.

    PubMed

    Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

    2014-01-01

    Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV. PMID:24872800

  17. Direct Observation of Gigahertz Coherent Guided Acoustic Phonons in Free-Standing Single Copper Nanowires.

    PubMed

    Jean, Cyril; Belliard, Laurent; Cornelius, Thomas W; Thomas, Olivier; Toimil-Molares, Maria Eugenia; Cassinelli, Marco; Becerra, Loïc; Perrin, Bernard

    2014-12-01

    We report on gigahertz acoustic phonon waveguiding in free-standing single copper nanowires studied by femtosecond transient reflectivity measurements. The results are discussed on the basis of the semianalytical resolution of the Pochhammer and Chree equation. The spreading of the generated Gaussian wave packet of two different modes is derived analytically and compared with the observed oscillations of the sample reflectivity. These experiments provide a unique way to independently obtain geometrical and material characterization. This direct observation of coherent guided acoustic phonons in a single nano-object is also the first step toward nanolateral size acoustic transducer and comprehensive studies of the thermal properties of nanowires. PMID:26278939

  18. Single ZnO nanowire ultraviolet detector with free-recovered contact performance

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Wang, Liang; Li, Xin; Li, Zhenhu; Feng, Shuanglong; Lu, Wenqiang

    2016-06-01

    In this paper, a single ZnO nanowire ultraviolet detector was firstly fabricated by a single ZnO nanowire and silver paint, which can be free-recovered from a Schottky contact to an Ohmic contact. Key effect factors such as the illumination and bias voltage of the free-recovered performance were also investigated. Meanwhile, the reason for the recoverable contact was further confirmed in detail. This result is beneficial for developing the highly sensitive ZnO based ultraviolet detector.

  19. In Situ Investigation of Li and Na Ion Transport with Single Nanowire Electrochemical Devices.

    PubMed

    Xu, Xu; Yan, Mengyu; Tian, Xiaocong; Yang, Chuchu; Shi, Mengzhu; Wei, Qiulong; Xu, Lin; Mai, Liqiang

    2015-06-10

    In the past decades, Li ion batteries are widely considered to be the most promising rechargeable batteries for the rapid development of mobile devices and electric vehicles. There arouses great interest in Na ion batteries, especially in the field of static grid storage due to their much lower production cost compared with Li ion batteries. However, the fundamental mechanism of Li and Na ion transport in nanoscale electrodes of batteries has been rarely experimentally explored. This insight can guide the development and optimization of high-performance electrode materials. In this work, single nanowire devices with multicontacts are designed to obtain detailed information during the electrochemical reactions. This unique platform is employed to in situ investigate and compare the transport properties of Li and Na ions at a single nanowire level. To give different confinement for ions and electrons during the electrochemical processes, two different configurations of nanowire electrode are proposed; one is to fully immerse the nanowire in the electrolyte, and the other is by using photoresist to cover the nanowire with only one end exposed. For both configurations, the conductivity of nanowire decreases after intercalation/deintercalation for both Li and Na ions, indicating that they share the similar electrochemical reaction mechanisms in layered electrodes. However, the conductivity degradation and structure destruction for Na ions is more severe than those of Li ions during the electrochemical processes, which mainly results from the much larger volume of Na ions and greater energy barrier encountered by the limited layered spaces. Moreover, the battery performances of coin cells are compared to further confirm this conclusion. The present work provides a unique platform for in situ electrochemical and electrical probing, which will push the fundamental and practical research of nanowire electrode materials for energy storage applications. PMID:25989463

  20. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    SciTech Connect

    Llobet, Jordi; Pérez-Murano, Francesc E-mail: z.durrani@imperial.ac.uk; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K. E-mail: z.durrani@imperial.ac.uk; Arbiol, Jordi

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  1. Single Material Band Gap Engineering in GaAs Nanowires

    SciTech Connect

    Spirkoska, D.; Abstreiter, G.; Efros, A.; Conesa-Boj, S.; Morante, J. R.; Arbiol, J.; Fontcuberta i Morral, A.

    2011-12-23

    The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

  2. High-frequency characterization and modeling of single metallic nanowires

    NASA Astrophysics Data System (ADS)

    Hsu, Chuan-Lun; Ardila, Gustavo; Benech, Philippe

    2013-07-01

    The transmission line characteristics of an individual aluminum metallic nanowire up to 100 GHz are presented in this paper. We have built a reliable framework for characterizing such nanowires using a specially designed coplanar waveguide platform. We systematically estimate the pad parasitics, contact impedance and transmission line parameters based on an equivalent circuit model and cascade-based de-embedding theory. This is the first time that such external parasitic elements have been successfully removed from a nanoscale transmission line. The extracted frequency-dependent electrical responses show good signal levels and a high degree of reproducibility. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  3. Effect of Ions and Ionic Strength on Surface Plasmon Absorption of Single Gold Nanowires.

    PubMed

    Baral, Susil; Green, Andrew J; Richardson, Hugh H

    2016-06-28

    The local temperature change from a single optically excited gold nanowire, lithographically prepared on Al0.94Ga0.06N embedded with Er(3+) ions, is measured in air, pure water, and various concentrations of aqueous solutions of ionic solutes of NaCl, Na2SO4, and MgSO4. The absorption cross section of the nanowire under pure water (2.25 × 10(-14) m(2)) and different solution ionic strength is measured from the slopes of temperature change versus laser intensity plots. Addition of charges into the solution decreases the amount of heat generated during optical excitation of the gold nanostructures because the absorption cross section of the gold nanowire is attenuated. A Langmuir-type behavior of the absorption cross section with ionic strength is observed that is identified with an increase in the occupancy of screened interfacial charges. The absorption cross section of the nanowire decreases with ionic strength until a saturation value of 9 × 10(-15) m(2), where saturation in the occupancy of screened interfacial charge occurs. Dynamic measurements of temperature for a single gold nanowire immersed in a microchannel flow cell show a sharp and fast temperature drop for the flow of ionic solution compared to the pure (deionized) water, suggesting that the technique can be developed as a sensor probe to detect the presence of ions in solution. PMID:27215955

  4. Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire

    SciTech Connect

    Reddy, K. M. Punnoose, Alex; Hanna, Charles; Padture, Nitin P.

    2015-05-07

    We report on the magnetoresistance (MR) and electron transport measurements observed on a single crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturation magnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5–300 K temperature range were performed by scanning gate voltage and varying applied magnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10{sup −4} Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.

  5. Versatile method for template-free synthesis of single crystalline metal and metal alloy nanowires.

    PubMed

    Scott, John A; Totonjian, Daniel; Martin, Aiden A; Tran, Toan Trong; Fang, Jinghua; Toth, Milos; McDonagh, Andrew M; Aharonovich, Igor; Lobo, Charlene J

    2016-02-01

    Metal and metal alloy nanowires have applications ranging from spintronics to drug delivery, but high quality, high density single crystalline materials have been surprisingly difficult to fabricate. Here we report a versatile, template-free, self-assembly method for fabrication of single crystalline metal and metal alloy nanowires (Co, Ni, NiCo, CoFe, and NiFe) by reduction of metal nitride precursors formed in situ by reaction of metal salts with a nitrogen source. Thiol reduction of the metal nitrides to the metallic phase at 550-600 °C results in nanowire growth. In this process, sulfur acts as a uniaxial structure-directing agent, passivating the surface of the growing nanowires and preventing radial growth. The versatility of the method is demonstrated by achieving nanowire growth from gas-phase, solution-phase or a combination of gas- and solution-phase precursors. The fabrication method is suited to large-area CVD on a wide range of solid substrates. PMID:26763153

  6. Performance-limiting factors for GaAs-based single nanowire photovoltaics.

    PubMed

    Wang, Xufeng; Khan, Mohammad Ryyan; Lundstrom, Mark; Bermel, Peter

    2014-03-10

    GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge transport for high-performance photovoltaic (PV) devices. However, it is still an open question as to whether these devices can exceed the Shockley-Queisser efficiency limit for single-junction PV. In this work, single standing GaAs-based nanowire solar cells in both radial and vertical junction configurations is analyzed and compared to a planar thin-film design. By using a self-consistent, electrical-optically coupled 3D simulator, we show the design principles for nanowire and planar solar cells are significantly different; nanowire solar cells are vulnerable to surface and contact recombination, while planar solar cells suffer significant losses due to imperfect backside mirror reflection. Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit. PMID:24922244

  7. Performance-limiting factors for GaAs-based single nanowire photovoltaics.

    PubMed

    Wang, Xufeng; Khan, Mohammad Ryyan; Lundstrom, Mark; Bermel, Peter

    2014-03-10

    GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge transport for high-performance photovoltaic (PV) devices. However, it is still an open question as to whether these devices can exceed the Shockley-Queisser efficiency limit for single-junction PV. In this work, single standing GaAs-based nanowire solar cells in both radial and vertical junction configurations is analyzed and compared to a planar thin-film design. By using a self-consistent, electrical-optically coupled 3D simulator, we show the design principles for nanowire and planar solar cells are significantly different; nanowire solar cells are vulnerable to surface and contact recombination, while planar solar cells suffer significant losses due to imperfect backside mirror reflection. Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit. PMID:24800291

  8. Single particle plasmon spectroscopy of silver nanowires and gold nanorods.

    SciTech Connect

    N'Gom, M.; Ringnalda, J.; Mansfield, J. F.; Agarwal, A.; Kotov, N.; Zaluzec, N. J.; Norris, T. B.; Materials Science Division; Univ. of Michigan at Ann Arbor; Ohio State Univ.

    2008-01-01

    The excitation of surface plasmons in individual silver nanowires and gold nanorods is investigated by means of high-resolution electron energy loss spectroscopy in a transmission electron microscope. The transverse and longitudinal modes of these nanostructures are resolved, and the size variation of the plasmon peaks is studied. The effect of electromagnetic coupling between closely spaced nanoparticles is also observed. Finally, the relation between energy-loss measurements and optical spectroscopy of nanoparticle plasmon modes is discussed.

  9. Resistance of Single Ag Nanowire Junctions and Their Role in the Conductivity of Nanowire Networks.

    PubMed

    Bellew, Allen T; Manning, Hugh G; Gomes da Rocha, Claudia; Ferreira, Mauro S; Boland, John J

    2015-11-24

    Networks of silver nanowires appear set to replace expensive indium tin oxide as the transparent conducting electrode material in next generation devices. The success of this approach depends on optimizing the material conductivity, which until now has largely focused on minimizing the junction resistance between wires. However, there have been no detailed reports on what the junction resistance is, nor is there a known benchmark for the minimum attainable sheet resistance of an optimized network. In this paper, we present junction resistance measurements of individual silver nanowire junctions, producing for the first time a distribution of junction resistance values and conclusively demonstrating that the junction contribution to the overall resistance can be reduced beyond that of the wires through standard processing techniques. We find that this distribution shows the presence of a small percentage (6%) of high-resistance junctions, and we show how these may impact the performance of network-based materials. Finally, through combining experiment with a rigorous model, we demonstrate the important role played by the network skeleton and the specific connectivity of the network in determining network performance. PMID:26448205

  10. Bright single-photon sources in bottom-up tailored nanowires

    PubMed Central

    Reimer, Michael E.; Bulgarini, Gabriele; Akopian, Nika; Hocevar, Moïra; Bavinck, Maaike Bouwes; Verheijen, Marcel A.; Bakkers, Erik P.A.M.; Kouwenhoven, Leo P.; Zwiller, Val

    2012-01-01

    The ability to achieve near-unity light-extraction efficiency is necessary for a truly deterministic single-photon source. The most promising method to reach such high efficiencies is based on embedding single-photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light-extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching-induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguides, we demonstrate a 24-fold enhancement in the single-photon flux, corresponding to a light-extraction efficiency of 42%. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p–n junction. PMID:22415828

  11. A near-infrared 64-pixel superconducting nanowire single photon detector array with integrated multiplexed readout

    SciTech Connect

    Allman, M. S. Verma, V. B.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Mirin, R.; Nam, S. W.; Marsili, F.; Beyer, A.; Shaw, M. D.; Kumor, D.

    2015-05-11

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

  12. Proton irradiation effects on the thermoelectric properties in single-crystalline Bi nanowires

    SciTech Connect

    Chang, Taehoo; Kim, Jeongmin; Song, Min-Jung; Lee, Wooyoung

    2015-05-15

    The effects of proton irradiation on the thermoelectric properties of Bi nanowires (Bi-NWs) were investigated. Single crystalline Bi-NWs were grown by the on-film formation of nanowires method. The devices based on individual Bi-NWs were irradiated with protons at different energies. The total number of displaced atoms was estimated using the Kinchin-Pease displacement model. The electric conductivity and Seebeck coefficient in the Bi-NW devices were investigated before and after proton irradiation at different temperatures. Although the Seebeck coefficient remained stable at various irradiation energies, the electrical conductivity significantly declined with increasing proton energy up to 40 MeV.

  13. Stress induced growth of Sn nanowires in a single step by sputtering method

    NASA Astrophysics Data System (ADS)

    Yadav, A.; Patel, N.; Miotello, A.; Kothari, D. C.

    2015-06-01

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  14. Stress induced growth of Sn nanowires in a single step by sputtering method

    SciTech Connect

    Yadav, A. Kothari, D. C.; Patel, N.; Miotello, A.

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  15. Selective patterned growth of single-crystal organic nanowires of Ag-TCNQ with chemical raction method

    SciTech Connect

    Xiao, Kai; Tao, Jing; Puretzky, Alexander A; Ivanov, Ilia N; Retterer, Scott T; Pennycook, Stephen J; Geohegan, David B

    2008-01-01

    Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic devices.

  16. Local detection efficiency of a NbN superconducting single photon detector explored by a scattering scanning near-field optical microscope.

    PubMed

    Wang, Qiang; Renema, Jelmer J; Engel, Andreas; van Exter, Martin P; de Dood, Michiel J A

    2015-09-21

    We propose an experiment to directly probe the local response of a superconducting single photon detector using a sharp metal tip in a scattering scanning near-field optical microscope. The optical absorption is obtained by simulating the tip-detector system, where the tip-detector is illuminated from the side, with the tip functioning as an optical antenna. The local detection efficiency is calculated by considering the recently introduced position-dependent threshold current in the detector. The calculated response for a 150 nm wide detector shows a peak close to the edge that can be spatially resolved with an estimated resolution of ∼ 20 nm, using a tip with parameters that are experimentally accessible. PMID:26406688

  17. Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

    SciTech Connect

    Kim, Jeongmin; Lee, Seunghyun; Kim, MinGin; Lee, Wooyoung E-mail: pk2015@columbia.edu; Brovman, Yuri M.; Kim, Philip E-mail: pk2015@columbia.edu

    2014-01-27

    We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory.

  18. Single-crystal nanowires grown via electron-beam-induced deposition

    SciTech Connect

    Klein, Kate L; Randolph, Steven J; Fowlkes, Jason Davidson; Allard Jr, Lawrence Frederick; Meyer III, Harry M; Simpson, Michael L; Rack, Philip D

    2008-01-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of 3-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this manuscript, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High-resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured -tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  19. Single-nanowire solar cells beyond the Shockley-Queisser limit

    NASA Astrophysics Data System (ADS)

    Krogstrup, Peter; Jørgensen, Henrik Ingerslev; Heiss, Martin; Demichel, Olivier; Holm, Jeppe V.; Aagesen, Martin; Nygard, Jesper; Fontcuberta I Morral, Anna

    2013-04-01

    Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm-2 is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.

  20. Synthesis and nonlinear optical properties of single-crystalline KNb3O8 nanowires

    NASA Astrophysics Data System (ADS)

    Yu, Bin; Cao, Bo; Cao, Huiqun; Zhang, Xinpeng; Chen, Danni; Qu, Junle; Niu, Hanben

    2013-03-01

    Single-crystalline KNb3O8 nanowires with widths of 100-300 nm and lengths up to tens of microns were synthesized by calcining Nb2O5 powders in molten KCl and K2SO4. The phase of the products was determined by means of x-ray diffraction, and the morphology and structure were characterized by using scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction techniques. The growth direction of the KNb3O8 obtained was determined to be the [001] crystallographic direction. Meanwhile, the polarization response of the second-harmonic generation (SHG) response was investigated. The as-synthesized nanowires clearly exhibited a SHG response, which means that the nanowires were an efficient nanoscale second-harmonic light source. The excellent nonlinear optical property of KNb3O8 shows potential for application in nano-optical devices.

  1. Synthesis and nonlinear optical properties of single-crystalline KNb3O8 nanowires.

    PubMed

    Yu, Bin; Cao, Bo; Cao, Huiqun; Zhang, Xinpeng; Chen, Danni; Qu, Junle; Niu, Hanben

    2013-03-01

    Single-crystalline KNb(3)O(8) nanowires with widths of 100-300 nm and lengths up to tens of microns were synthesized by calcining Nb(2)O(5) powders in molten KCl and K(2)SO(4). The phase of the products was determined by means of x-ray diffraction, and the morphology and structure were characterized by using scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction techniques. The growth direction of the KNb(3)O(8) obtained was determined to be the [001] crystallographic direction. Meanwhile, the polarization response of the second-harmonic generation (SHG) response was investigated. The as-synthesized nanowires clearly exhibited a SHG response, which means that the nanowires were an efficient nanoscale second-harmonic light source. The excellent nonlinear optical property of KNb(3)O(8) shows potential for application in nano-optical devices. PMID:23377103

  2. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    SciTech Connect

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-12-04

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.

  3. Filling single-wall carbon nanotubes with d- and f-metal chloride and metal nanowires.

    PubMed

    Satishkumar, B C; Taubert, A; Luzzi, D E

    2003-01-01

    Nanowires of magnetic metals (Fe, Co, Ho, Gd) have been synthesized inside the hollow interiors of single-wall carbon nanotubes (SWNTs) by filling SWNTs with precursor metal chlorides and subsequent reduction. SWNTs have been filled by either the melt-phase sealed-tube reaction or a solution-phase method. Among the metal chlorides investigated in this study, HoCl3 and GdCl3 filled the SWNTs to a significantly higher extent. The nanowires have been imaged by transmission electron microscopy (TEM), high-resolution transmission electron microscopy, and scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy carried out in conjunction with TEM and STEM confirmed the presence of metal chloride and metal nanowires. PMID:12908245

  4. Bias-free true random number generation using superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    He, Yuhao; Zhang, Weijun; Zhou, Hui; You, Lixing; Lv, Chaolin; Zhang, Lu; Liu, Xiaoyu; Wu, Junjie; Chen, Sijing; Ren, Min; Wang, Zhen; Xie, Xiaoming

    2016-08-01

    We demonstrate a bias-free true random number generator (TRNG) based on single photon detection using superconducting nanowire single photon detectors (SNSPDs). By comparing the photon detection signals of two consecutive laser pulses and extracting the random bits by the von Neumann correction method, we achieved a random number generation efficiency of 25% (a generation rate of 3.75 Mbit s‑1 at a system clock rate of 15 MHz). Using a multi-channel superconducting nanowire single photon detector system with controllable pulse signal amplitudes, we detected the single photons with photon number resolution and positional sensitivity, which could further increase the random number generation efficiency. In a three-channel SNSPD system, the random number bit generation efficiency was improved to 75%, corresponding to a generation rate of 7.5 Mbit s‑1 with a 10 MHz system clock rate. All of the generated random numbers successfully passed the statistical test suite.

  5. Salt flux synthesis of single and bimetallic carbide nanowires

    NASA Astrophysics Data System (ADS)

    Leonard, Brian M.; Waetzig, Gregory R.; Clouser, Dale A.; Schmuecker, Samantha M.; Harris, Daniel P.; Stacy, John M.; Duffee, Kyle D.; Wan, Cheng

    2016-07-01

    Metal carbide compounds have a broad range of interesting properties and are some of the hardest and highest melting point compounds known. However, their high melting points force very high reaction temperatures and thus limit the formation of high surface area nanomaterials. To avoid the extreme synthesis temperatures commonly associated with these materials, a new salt flux technique has been employed to reduce reaction temperatures and form these materials in the nanometer regime. Additionally, the use of multiwall carbon nanotubes as a reactant further reduces the diffusion distance and provides a template for the final carbide materials. The metal carbide compounds produced through this low temperature salt flux technique maintain the nanowire morphology of the carbon nanotubes but increase in size to ∼15–20 nm diameter due to the incorporation of metal in the carbon lattice. These nano-carbides not only have nanowire like shape but also have much higher surface areas than traditionally prepared metal carbides. Finally, bimetallic carbides with composition control can be produced with this method by simply using two metal precursors in the reaction. This method provides the ability to produce nano sized metal carbide materials with size, morphology, and composition control and will allow for these compounds to be synthesized and studied in a whole new size and temperature regime.

  6. Electrical properties of ZnO single nanowires

    NASA Astrophysics Data System (ADS)

    Stiller, Markus; Barzola-Quiquia, José; Zoraghi, Mahsa; Esquinazi, Pablo

    2015-10-01

    We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. The temperature dependence of the resistance of the wire, before proton implantation, can be well described by two processes in parallel. One process is the fluctuation induced tunneling conductance (FITC) and the other the usual thermally activated process. The existence of a tunneling conductance was also observed in the current-voltage (I-V) results, and can be well described by the FITC model. Impedance spectroscopy measurements in the as-prepared state and at room temperature, indicate and support the idea of two contributions of these two transport processes in the nanowires. Electron backscatter diffraction confirms the existence of different crystalline regions. After the implantation of H+ a third thermally activated process is found that can be explained by taking into account the impurity band splitting due to proton implantation.

  7. Single-crystal apatite nanowires sheathed in graphitic shells: synthesis, characterization, and application.

    PubMed

    Jeong, Namjo; Cha, Misun; Park, Yun Chang; Lee, Kyung Mee; Lee, Jae Hyup; Park, Byong Chon; Lee, Junghoon

    2013-07-23

    Vertically aligned one-dimensional hybrid structures, which are composed of apatite and graphitic structures, can be beneficial for orthopedic applications. However, they are difficult to generate using the current method. Here, we report the first synthesis of a single-crystal apatite nanowire encapsulated in graphitic shells by a one-step chemical vapor deposition. Incipient nucleation of apatite and its subsequent transformation to an oriented crystal are directed by derived gaseous phosphorine. Longitudinal growth of the oriented apatite crystal is achieved by a vapor-solid growth mechanism, whereas lateral growth is suppressed by the graphitic layers formed through arrangement of the derived aromatic hydrocarbon molecules. We show that this unusual combination of the apatite crystal and the graphitic shells can lead to an excellent osteogenic differentiation and bony fusion through a programmed smart behavior. For instance, the graphitic shells are degraded after the initial cell growth promoted by the graphitic nanostructures, and the cells continue proliferation on the bare apatite nanowires. Furthermore, a bending experiment indicates that such core-shell nanowires exhibited a superior bending stiffness compared to single-crystal apatite nanowires without graphitic shells. The results suggest a new strategy and direction for bone grafting materials with a highly controllable morphology and material conditions that can best stimulate bone cell differentiation and growth. PMID:23755838

  8. Enhanced photoabsorption in front-tapered single-nanowire solar cells.

    PubMed

    Zhan, Yaohui; Li, Xiaofeng; Wu, Shaolong; Li, Ke; Yang, Zhenhai; Shang, Aixue

    2014-10-01

    Vertically aligned single-nanowire is verified to be a unique building block to realize the high-efficiency solar cell beyond Schockley-Queisser limit. We proposed a front-tapered vertically aligned single-nanowire solar cell (V-SNSC) and investigated numerically the possibility of this configuration to improve the photoabsorption efficiency compared to the conventional designs, by using 2.5D full-wave finite-element method. The influences of the feature sizes of aspect ratio, bottom radius, and nanowire length on the light-trapping properties were explored; the detailed field distribution and carrier generation rate were revealed as well based on the theory of dielectric resonant antenna, in order to elucidate the underlying physical mechanism. Results showed that, compared with the cylindrical counterparts, the absorption capability of V-SNSCs could be greatly enhanced by using a front-tapered configuration with less material utilized, and that such a positive effect can be further strengthened by increasing the nanowire length. The proposed configuration provides a promising approach to engineer the photoabsorption in the photovoltaic and other optoelectronic devices. PMID:25360977

  9. Single on-chip gold nanowires for electrochemical biosensing of glucose.

    PubMed

    Dawson, Karen; Baudequin, Marine; O'Riordan, Alan

    2011-11-01

    The development of glucose diagnostic devices with low detection limits is of key importance in diabetes-related research. New highly sensitive sensors are required for non-invasive detection of glucose in bodily fluids, other than blood, and an electrochemical sensor based on a single gold nanowire for rapid, reliable and quantitative detection of low glucose concentrations (10 μM-1 mM), is presented in this paper. Single gold nanowire devices are fabricated at silicon chip substrates using a hybrid electron beam-photolithography approach. Critical dimensions of the nanowires are characterised using a combination of scanning electron and atomic force microscopies. Fabricated nanowire devices are characterised by direct electrical probing and cyclic voltammetry to explore functionality. The voltammetric detection of glucose was performed using ferrocene monocarboxylic acid as an oxidising mediator in the presence of glucose oxidase. The biosensor can be applied to the quantification of glucose in the range of 10 μM-100 mM, with an extremely high sensitivity of 7.2 mA mM(-1) cm(-2) and a low detection limit of 3 μM (S/N = 3). The sensor demonstrated high selectivity towards glucose with negligible interference from other oxidizable species including uric acid, ascorbic acid, mannose, fructose, salicylic acid (Aspirin) and acetaminophen (Paracetamol). PMID:21909570

  10. Topological surface transport properties of single-crystalline SnTe nanowire.

    PubMed

    Safdar, Muhammad; Wang, Qisheng; Mirza, Misbah; Wang, Zhenxing; Xu, Kai; He, Jun

    2013-01-01

    SnTe has attracted worldwide interest since its theoretical predication as topological crystalline insulator. Because of promising applications of one-dimensional topological insulator in nanoscale electronics and spintronics device, it is very important to realize the observation of topological surface states in one-dimensional SnTe. In this work, for the first time we successfully synthesized high-quality single crystalline SnTe nanowire via gold-catalyst chemical vapor deposition method. Systematical investigation of Aharonov-Bohm and Shubnikov-de Haas oscillations in single SnTe nanowire prove the existence of Dirac electrons. Further analysis of temperature-dependent Shubnikov-de Haas oscillations gives valuable information of cyclotron mass, mean-free path, and mobility of Dirac electrons in SnTe nanowire. Our study provides the experimental groundwork for research in low-dimensional topological crystalline insulator materials and paves the way for the application of SnTe nanowire in nanoelectronics and spintronics device. PMID:24175637

  11. Monolithic carbon structures including suspended single nanowires and nanomeshes as a sensor platform

    PubMed Central

    2013-01-01

    With the development of nanomaterial-based nanodevices, it became inevitable to develop cost-effective and simple nanofabrication technologies enabling the formation of nanomaterial assembly in a controllable manner. Herein, we present suspended monolithic carbon single nanowires and nanomeshes bridging two bulk carbon posts, fabricated in a designed manner using two successive UV exposure steps and a single pyrolysis step. The pyrolysis step is accompanied with a significant volume reduction, resulting in the shrinkage of micro-sized photoresist structures into nanoscale carbon structures. Even with the significant elongation of the suspended carbon nanowire induced by the volume reduction of the bulk carbon posts, the resultant tensional stress along the nanowire is not significant but grows along the wire thickness; this tensional stress gradient and the bent supports of the bridge-like carbon nanowire enhance structural robustness and alleviate the stiction problem that suspended nanostructures frequently experience. The feasibility of the suspended carbon nanostructures as a sensor platform was demonstrated by testing its electrochemical behavior, conductivity-temperature relationship, and hydrogen gas sensing capability. PMID:24256942

  12. Confinement effect in single nanowires based on Bi

    NASA Astrophysics Data System (ADS)

    Nikolaeva, A.; Gitsu, D.; Huber, T.; Konopko, L.

    2004-04-01

    For the first time it was experimentally found that in wires Bi with d=75 nm in the transverse magnetic field (H⊥ I) in the case when H || C 1 and H || C s (C s⊥C 1 and makes an angle ≈20° with the axis C3), magnetoresistance has a number of characteristic points determined by size effect, where the cyclotron radius Rc coincides with the wire diameter d. This allowed with accuracy up to several percents from relation Rc= cPF/ eH to determine the impulses of the extreme cross-section of the Fermi surface of holes in T-point of the Brillouin zone, anisotropy of the Fermi surfaces of holes in T. We offer a method for determination of the Fermi surface cross-sections in Bi nanowires, when the Shubnikov de Hass oscillations are not observed.

  13. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    SciTech Connect

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-08

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  14. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    NASA Astrophysics Data System (ADS)

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-01

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  15. Nanowires: Quantitative Probing of Cu(2+) Ions Naturally Present in Single Living Cells (Adv. Mater. 21/2016).

    PubMed

    Lee, Junho; Lee, Hwa-Rim; Pyo, Jaeyeon; Jung, Youngseob; Seo, Ji-Young; Ryu, Hye Guk; Kim, Kyong-Tai; Je, Jung Ho

    2016-06-01

    Quantitative probing of the Cu(2+) ions naturally present in single living cells is accomplished by a probe made from a quantum-dot-embedded-nanowire waveguide. After inserting the active nanowire-based waveguide probe into single living cells, J. H. Je and co-workers directly observe photoluminescence (PL) quenching of the embedded quantum dots by the Cu(2+) ions diffused into the probe as described on page 4071. This results in quantitative measurement of intracellular Cu(2+) ions. PMID:27246918

  16. Exciton-Exciton Annihilation in Copper-Phthalocyanine Single-Crystal Nanowires

    SciTech Connect

    Ma, Yingzhong; Xiao, Kai; Shaw, Robert W

    2012-01-01

    Femtosecond one-color pump-probe spectroscopy was applied to study exciton dynamics in single-crystal copper-phthalocyanine (CuPc) nanowires grown on an opaque silicon substrate. The transient reflectance kinetics measured at different pump fluences exhibit a remarkable intensity-dependent decay behavior which accelerates significantly with increasing pump pulse intensity. All the kinetic decays can be satisfactorily described using a bi-exponential decay function with lifetimes of 22 and 204 ps, and corresponding relative amplitudes depending on the pump intensity. The accelerated decay behavior observed at high pump intensities arises from a nonlinear exciton-exciton annihilation process. While this phenomenon has been found previously in crystalline metallophthalocyanine (MPc) polymorphs such as colloidal particles and thin films, the results obtained using the CuPc nanowires are markedly distinct, namely, much longer decay times and a linear intensity dependence of the initial peak amplitudes. Despite these differences, detailed data analysis further shows that, as found for other metal-phthalocyanine polymorphs, exciton-exciton annihilation in the CuPc nanowires is one-dimensional (1D) diffusion-limited, which possibly involves intra-chain exciton diffusion along 1D molecular stacks. The significantly long-lived excitons of CuPc nanowires in comparison to those of other crystalline polymorphs make them particularly suitable for photovoltaic applications.

  17. In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode

    SciTech Connect

    Huang, J Y; Zhong, L; Wang, C M; Sullivan, J P; Xu, W; Zhang, L Q; Mao, S X; Hudak, N S; Liu, X H; Subramanian, A; Fan, H Y; Qi, L A; Kushima, A; Li, J

    2010-12-09

    We report the creation of a nanoscale electrochemical device inside a transmission electron microscope—consisting of a single tin dioxide (SnO{sub 2}) nanowire anode, an ionic liquid electrolyte, and a bulk lithium cobalt dioxide (LiCoO{sub 2}) cathode—and the in situ observation of the lithiation of the SnO{sub 2} nanowire during electrochemical charging. Upon charging, a reaction front propagated progressively along the nanowire, causing the nanowire to swell, elongate, and spiral. The reaction front is a “Medusa zone” containing a high density of mobile dislocations, which are continuously nucleated and absorbed at the moving front. This dislocation cloud indicates large in-plane misfit stresses and is a structural precursor to electrochemically driven solid-state amorphization. Because lithiation-induced volume expansion, plasticity, and pulverization of electrode materials are the major mechanical effects that plague the performance and lifetime of high-capacity anodes in lithium-ion batteries, our observations provide important mechanistic insight for the design of advanced batteries.

  18. From nucleation to nanowires: a single-step process in reactive plasmas.

    PubMed

    Ostrikov, Kostya Ken; Levchenko, Igor; Cvelbar, Uros; Sunkara, Mahendra; Mozetic, Miran

    2010-10-01

    This feature article introduces a deterministic approach for the rapid, single-step, direct synthesis of metal oxide nanowires. This approach is based on the exposure of thin metal samples to reactive oxygen plasmas and does not require any intervening processing or external substrate heating. The critical roles of the reactive oxygen plasmas, surface processes, and plasma-surface interactions that enable this growth are critically examined by using a deterministic viewpoint. The essentials of the experimental procedures and reactor design are presented and related to the key process requirements. The nucleation and growth kinetics is discussed for typical solid-liquid-solid and vapor-solid-solid mechanisms related to the synthesis of the oxide nanowires of metals with low (Ga, Cd) and high (Fe) melting points, respectively. Numerical simulations are focused on the possibility to predict the nanowire nucleation points through the interaction of the plasma radicals and ions with the nanoscale morphological features on the surface, as well as to control the localized 'hot spots' that in turn determine the nanowire size and shape. This generic approach can be applied to virtually any oxide nanoscale system and further confirms the applicability of the plasma nanoscience approaches for deterministic nanoscale synthesis and processing. PMID:20721365

  19. X-ray diffraction strain analysis of a single axial InAs 1-x Px nanowire segment.

    PubMed

    Keplinger, Mario; Mandl, Bernhard; Kriegner, Dominik; Holý, Václav; Samuelsson, Lars; Bauer, Günther; Deppert, Knut; Stangl, Julian

    2015-01-01

    The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires. PMID:25537589

  20. Photocurrents in a Single InAs Nanowire/Silicon Heterojunction.

    PubMed

    Brenneis, Andreas; Overbeck, Jan; Treu, Julian; Hertenberger, Simon; Morkötter, Stefanie; Döblinger, Markus; Finley, Jonathan J; Abstreiter, Gerhard; Koblmüller, Gregor; Holleitner, Alexander W

    2015-10-27

    We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through midgap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases. PMID:26348461

  1. Atomic size effects studied by transport in single silicide nanowires

    NASA Astrophysics Data System (ADS)

    Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M.; Holtgrewe, K.; Sanna, S.; Schmidt, W. G.; Tegenkamp, C.

    2016-03-01

    Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

  2. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

    PubMed Central

    2012-01-01

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future. PMID:22501032

  3. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  4. Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire

    NASA Astrophysics Data System (ADS)

    Kang, Myung-Gil; Ahn, Jae-Hyun; Lee, Jongwoon; Hwang, Dong-Hoon; Kim, Hee-Tae; Rieh, Jae-Seong; Whang, Dongmok; Son, Maeng-Ho; Ahn, Doyeol; Yu, Yun-Seop; Hwang, Sung-Woo

    2010-06-01

    Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

  5. Transport studies of quantum dots sensitized single Mn-ZnO nanowire field effect transistors

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.; Maloney, Francis Scott; Rimal, Gaurab; Poudyal, Uma; Tang, Jinke; Wang, Wenyong

    We present opto-electrical transport properties of Mn-CdSe quantum dots (QDs) sensitized single Mn-ZnO nanowire (NW) field effect transistors (FET). The ZnO NWs with 2 atomic % of Mn doping are grown by chemical vapor deposition. The NWs are ferromagnetic at low temperature. The as grown nanowires are transferred to clean SiO2/Si substrate and single nanowire field effect transistors (FET) are fabricated by standard e-beam lithography. Mobility and carrier concentration of Mn-ZnO NWs are estimated from FET device measurement which shows NWs are n-type semiconductors. Pulse laser deposition of Mn-CdSe QDs on the single NW FET significantly increases carrier concentration of the QD-NW system in dark where the QD monolayer conduction is negligibly small. The photoconductivity study of QD sensitized NW FET enlightens the conduction spectrum of QD-NW system and QD to NW carrier transfer mechanism. This work has been supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-FG02-10ER46728.

  6. Non-degenerate pump-probe spectroscopy of single GaN nanowires

    SciTech Connect

    Upadhya, Prashanth C; Taylor, Antoinette J; Prasankumar, Rohiy P; Wang, George T; Martinez, Julio A; Li, Qiming; Swartzentruber, Brian S

    2010-01-01

    Spatially-resolved ultrafast transient absorption measurements on a single GaN nanowire give insight into carrier relaxation dynamics as a function of the probe polarization and position on the nanowire on a femtosecond timescale. The synthesis and optical characterization of semiconductor nanowires (NWs) has gained considerable attention in recent years owing to their unique electronic and optical properties that arise from their anisotropic geometry, large surface to volume ratio and two-dimensional quasiparticle confinement, Post-growth characterization of their properties is crucial in understanding the fundamental physical processes that can lead to enhanced functionality of NW-based devices, In particular, it is important to understand the carrier relaxation pathways in individual NWs, since the geometry of these nanostructures can significantly influence carrier recombination and/or trapping. In this respect, ultrafast optical techniques offer reliable and non-contact spectroscopic tools to study carrier dynamics in semiconductor nanostructures. In summary, time-resolved optical pump-probe spectroscopy was performed on single GaN NWs. These measurements give insight into the different processes that govern carrier capture, particularly at surface states, and relaxation in individual nanostructures. Our experiments thus demonstrate the value of single-particle ultrafast optical spectroscopy in understanding the physical processes that govern the properties of semiconductor NWs, while suggesting approaches to optimize NW-based devices for nanophotonic applications.

  7. Genetic Variation in the 3'-Untranslated Region of NBN Gene Is Associated with Gastric Cancer Risk in a Chinese Population

    PubMed Central

    Zhu, Xun; Ren, Chuanli; Xie, Lan; Dai, Ningbin; Gu, Yayun; Yan, Caiwang; Dai, Juncheng; Ma, Hongxia; Jiang, Yue; Chen, Jiaping; Hu, Zhibin; Shen, Hongbing; Wu, Haorong; Jin, Guangfu

    2015-01-01

    NBN plays a crucial role in carcinogenesis as a core component for both homologous recombination (HR) and non-homologous end-joining (NHEJ) DNA double-strand breaks (DSBs) repair pathways. Genetic variants in the NBN gene have been associated with multiple cancers risk, suggesting pleiotropic effect on cancer. We hypothesized that genetic variants in the NBN gene may modify the risk of gastric cancer. To test this hypothesis, we evaluated the association between four potentially functional single nucleotide polymorphisms in NBN and gastric cancer risk in a case–control study of 1,140 gastric cancer cases and 1,547 controls in a Chinese population. We found that the A allele of rs10464867 (G>A) was significantly associated with a decreased risk of gastric cancer (odds ratio [OR] = 0.81, 95% confidence interval [95% CI] = 0.71–0.94; P = 4.71×10−3). Furthermore, the association between A allele of rs10464867 and decreased risk of gastric cancer was more significantly in elder individuals (per-allele OR = 0.72[0.59–0.88], P = 1.07×10−3), and male individuals (per-allele OR = 0.73[0.62–0.87], P = 3.68×10−4). We further conducted a haplotype analysis and identified that the NBN Ars10464867Grs14448Grs1063053 haplotype conferred stronger protective effect on gastric cancer (OR = 0.76[0.65–0.89], P = 6.39×10−4). In summary, these findings indicate that genetic variants at NBN gene may contribute to gastric cancer susceptibility and may further advance our understanding of NBN gene in cancer development. PMID:26402912

  8. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  9. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices. PMID:26308470

  10. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    SciTech Connect

    Patsha, Avinash E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K.

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  11. Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors.

    PubMed

    Peng, Kun; Parkinson, Patrick; Boland, Jessica L; Gao, Qian; Wenas, Yesaya C; Davies, Christopher L; Li, Ziyuan; Fu, Lan; Johnston, Michael B; Tan, Hark H; Jagadish, Chennupati

    2016-08-10

    Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm(2) V(-1) s(-1)) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution. PMID:27413813

  12. Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Hoang, Thang B.; Moses, A. F.; Zhou, H. L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.

    2009-03-01

    Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The wurtzite GaAs nanowires exhibit a photoluminescence emission peak at 1.544 eV, 29 meV higher than the zinc blende GaAs free exciton energy. Temperature dependent photoluminescence measurements (4.4-70 K) show indications of defect and impurity related emissions at lower energies (1.53-1.54 eV) and the presence of nonradiative defects. High resolution transmission electron microscopy images show a low density of short zinc blende segments sandwiched in between a dominating wurtzite structure and weak photoluminescence emission related to such zinc blende segments is also observed.

  13. Alignment, rotation, and spinning of single plasmonic nanoparticles and nanowires using polarization dependent optical forces.

    PubMed

    Tong, Lianming; Miljković, Vladimir D; Käll, Mikael

    2010-01-01

    We demonstrate optical alignment and rotation of individual plasmonic nanostructures with lengths from tens of nanometers to several micrometers using a single beam of linearly polarized near-infrared laser light. Silver nanorods and dimers of gold nanoparticles align parallel to the laser polarization because of the high long-axis dipole polarizability. Silver nanowires, in contrast, spontaneously turn perpendicular to the incident polarization and predominantly attach at the wire ends, in agreement with electrodynamics simulations. Wires, rods, and dimers all rotate if the incident polarization is turned. In the case of nanowires, we demonstrate spinning at an angular frequency of approximately 1 Hz due to transfer of spin angular momentum from circularly polarized light. PMID:20030391

  14. Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Li, Zhuangzhi; Rochford, Caitlin; Javier Baca, F.; Liu, Jianwei; Li, Jun; Wu, Judy

    2010-09-01

    A vertically aligned carbon nanofiber array coated with anatase TiO2 (CNF/TiO2) is an attractive possible replacement for the sintered TiO2 nanoparticle network in the original dye-sensitized solar cell (DSSC) design due to the potential for improved charge transport and reduced charge recombination. Although the reported efficiency of 1.1% in these modified DSSC’s is encouraging, the limiting factors must be identified before a higher efficiency can be obtained. This work employs a single nanowire approach to investigate the charge transport in individual CNF/TiO2 core-shell nanowires with adsorbed N719 dye molecules in dark and under illumination. The results shed light on the role of charge traps and dye adsorption on the (photo) conductivity of nanocrystalline TiO2 CNF’s as related to dye-sensitized solar cell performance.

  15. An organic-inorganic broadband photodetector based on a single polyaniline nanowire doped with quantum dots.

    PubMed

    Yang, Xianguang; Liu, Yong; Lei, Hongxiang; Li, Baojun

    2016-08-25

    The capability to detect light over a broad waveband is highly important for practical optoelectronic applications and has been achieved with photodetectors of one-dimensional inorganic nanomaterials such as Si, ZnO, and GaN. However, achieving high speed responsivity over an entire waveband within such a photodetector remains a challenge. Here we demonstrate a broadband photodetector using a single polyaniline nanowire doped with quantum dots that is highly responsive over a broadband from 350 to 700 nm. The high responsivity is due to the high density of trapping states at the enormous interfaces between polyaniline and quantum dots. The interface trapping can effectively reduce the recombination rate and enhance the efficiency for light detection. Furthermore, a tunable spectral range can be achieved by size-based spectral tuning of quantum dots. The use of organic-inorganic hybrid polyaniline nanowires in broadband photodetection may offer novel functionalities in optoelectronic devices and circuits. PMID:27417337

  16. Antibacterial activity of single crystalline silver-doped anatase TiO2 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangyu; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin

    2016-05-01

    Well-ordered, one-dimensional silver-doped anatase TiO2 nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO2 nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  17. Orthogonal sequencing multiplexer for superconducting nanowire single-photon detectors with RSFQ electronics readout circuit.

    PubMed

    Hofherr, Matthias; Wetzstein, Olaf; Engert, Sonja; Ortlepp, Thomas; Berg, Benjamin; Ilin, Konstantin; Henrich, Dagmar; Stolz, Ronny; Toepfer, Hannes; Meyer, Hans-Georg; Siegel, Michael

    2012-12-17

    We propose an efficient multiplexing technique for superconducting nanowire single-photon detectors based on an orthogonal detector bias switching method enabling the extraction of the average count rate of a set of detectors by one readout line. We implemented a system prototype where the SNSPDs are connected to an integrated cryogenic readout and a pulse merger system based on rapid single flux quantum (RSFQ) electronics. We discuss the general scalability of this concept, analyze the environmental requirements which define the resolvability and the accuracy and demonstrate the feasibility of this approach with experimental results for a SNSPD array with four pixels. PMID:23263106

  18. In Operando X-Ray Nanodiffraction Reveals Electrically Induced Bending and Lattice Contraction in a Single Nanowire Device.

    PubMed

    Wallentin, Jesper; Osterhoff, Markus; Salditt, Tim

    2016-03-01

    Hard X-ray diffraction (XRD) using a nanofocused beam is used to measure both lattice contraction and bending in a single nanowire device under electric bias. The shape of the nanowire is reconstructed in 3D with sub-nanometer precision. As the bias voltage is gradually increased, nonreversible structural changes in the contact regions are observed, correlated with degradation of the electrical conductance. PMID:26689602

  19. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    SciTech Connect

    Reddy, K. M. Punnoose, Alex; Hanna, Charles; Padture, Nitin P.

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  20. Superconducting nanowire single-photon detectors integrated with optical nano-antennae

    SciTech Connect

    Hu, X.; Dauler, E.; Molnar, R.; Berggren, K. K.

    2010-12-20

    Optical nano-antennae have been integrated with semiconductor lasers to intensify light at the nanoscale and photodiodes to enhance photocurrent. In quantum optics, plasmonic metal structures have been used to enhance nonclassical light emission from single quantum dots. Absorption and detection of single photons from free space could also be enhanced by nanometallic antennae, but this has not previously been demonstrated. Here, we use nano-optical transmission effects in a one-dimensional gold structure, combined with optical cavity resonance, to form optical nano-antennae, which are further used to couple single photons from free space into a 80-nm-wide superconducting nanowire. This antenna-assisted coupling enables a superconducting nanowire single-photon detector with 47% device efficiency at the wavelength of 1550 nm and 9-μm-by-9-μm active area while maintaining a reset time of only 5 ns. We demonstrate nanoscale antenna-like structures to achieve exceptional efficiency and speed in single-photon detection.

  1. Demonstration of digital readout circuit for superconducting nanowire single photon detector.

    PubMed

    Ortlepp, T; Hofherr, M; Fritzsch, L; Engert, S; Ilin, K; Rall, D; Toepfer, H; Meyer, H-G; Siegel, M

    2011-09-12

    We demonstrate the transfer of single photon triggered electrical pulses from a superconducting nanowire single photon detector (SNSPD) to a single flux quantum (SFQ) pulse. We describe design and test of a digital SFQ based SNSPD readout circuit and demonstrate its correct operation. Both circuits (SNSPD and SFQ) operate under the same cryogenic conditions and are directly connected by wire bonds. A future integration of the present multi-chip configuration seems feasible because both fabrication process and materials are very similar. In contrast to commonly used semiconductor amplifiers, SFQ circuits combine very low power dissipation (a few microwatts) with very high operation speed, thus enabling count-rates of several gigahertz. The SFQ interface circuit simplifies the SNSPD readout and enables large numbers of detectors for future compact multi-pixel systems with single photon counting resolution. The demonstrated circuit has great potential for scaling the present interface solution to 1,000 detectors by using a single SFQ chip. PMID:21935228

  2. Reversible Sodium Ion Insertion in Single Crystalline Manganese Oxide Nanowires with Long Cycle Life

    SciTech Connect

    Cao, Yuliang; Xiao, Lifen; Wang, Wei; Choi, Daiwon; Nie, Zimin; Yu, Jianguo; Saraf, Laxmikant V.; Yang, Zhenguo; Liu, Jun

    2011-07-26

    Single crystalline Na4Mn9O18 nanowires were synthesized via pyrolysis of polyacrylate salt precursors prepared by in-situ polymerization of the metal salts and acrylate acid, followed by calcinations at an appropriate temperature to achieve good crystalline structure and uniform nanowire morphology with an average diameter of 50 nm. The Na4Mn9O18 nanowires have shown a high, reversible, and near theoretical sodium ion insertion capacity (128 mA h g-1 at 0.1C), excellent long cyclability (77% capacity retention for 1000 cycles at 0.5 C), along with good rate capability. Good capacity and charge-discharge stability are also observed for full cell experiments using a pyrolyzed carbon as the anode, therefore demonstrating the potential of these materials for sodium-ion batteries for large scale energy storage. Furthermore, this research shows that a good crystallinity and small particles are required to enhance the Na-ion diffusion and increase the stability of the electrode materials for long charge-discharge cycles.

  3. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  4. Waveguide-integrated NbTiN superconducting nanowire single-photon detector with ultralow jitter

    NASA Astrophysics Data System (ADS)

    Cheng, Risheng; Ma, Xiaosong; Ravindran, Prasana; Bardin, Joseph; Tang, Hong

    We demonstrate NbTiN superconducting nanowire single-photon detectors (SNSPDs) integrated with Si3N4 waveguides for counting visible and infrared photons. The nanowires with different width (30-90 nm) and length (40-80 um) are patterned into U-shapes on 200nm-thick Si3N4 waveguides, and the photons travelling along the waveguides could be efficiently absorbed by the nanowires via evanescent coupling. With the use of high-speed SiGe cryogenic amplifier, which operates together with the detector chip at the temperature of 1.7K, the jitter of the detection system is measured to be only 19 ps due to the improved signal-to-noise ratio (SNR), compared to 48 ps measured with room-temperature amplifiers. By investigating the background noise level and the pulse shape of the output signal from the detector, we determine the contribution of the noise to the final system jitter is less than 3ps, indicating that our results are very close to the intrinsic jitter of the detector.

  5. Design of broadband high-efficiency superconducting-nanowire single photon detectors

    NASA Astrophysics Data System (ADS)

    Redaelli, L.; Bulgarini, G.; Dobrovolskiy, S.; Dorenbos, S. N.; Zwiller, V.; Monroy, E.; Gérard, J. M.

    2016-06-01

    In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 μm. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (>99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.

  6. Atomistic Study of the Melting Behavior of Single Crystalline Wurtzite Gallium Nitride Nanowires

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J.

    2007-03-01

    Molecular dynamics (MD) simulation was used to study the melting behavior of GaN nanowires with Stillinger-Webber (SW) potential. Our results reveal that the melting of nanowires starts from the surface, and rapidly extends to the inner regions of nanowires as temperature increases. The melting temperature of GaN nanowires is lower than that of the bulk GaN, which may associate with large surfaces of nanowires. The melting temperatures increase to saturation values ~3100K and ~2900K when the diameters of nanowires are larger than 3.14 and 4.14 nm for nanowires with [100]- and [110]-oriented lateral facets, respectively.

  7. Controllable Synthesis of Single-Crystalline CdO and Cd(OH)2Nanowires by a Simple Hydrothermal Approach

    PubMed Central

    2010-01-01

    Single-crystalline Cd(OH)2 or CdO nanowires can be selectively synthesized at 150 °C by a simple hydrothermal method using aqueous Cd(NO3)2 as precursor. The method is biosafe, and compared to the conventional oil-water surfactant approach, more environmental-benign. As revealed by the XRD results, CdO or Cd(OH)2 nanowires can be generated in high purity by varying the time of synthesis. The results of FESEM and HRTEM analysis show that the CdO nanowires are formed in bundles. Over the CdO-nanowire bundles, photoluminescence at ~517 nm attributable to near band-edge emission of CdO was recorded. Based on the experimental results, a possible growth mechanism of the products is proposed. PMID:20672033

  8. Large-scale synthesis and electrical transport properties of single-crystalline SmB6 nanowires

    NASA Astrophysics Data System (ADS)

    Zhou, Yong; Peng, Yuehua; Yin, Yanling; Zhou, Weichang; Zhou, Fang; Liu, Chang; Liu, Guangtong; Sun, Lianfeng; Tang, Dongsheng

    2016-07-01

    Topological Kondo insulator samarium hexaboride (SmB6) nanowires, with diameters of 60–150 nm and lengths up to 1–5 μm, were successfully synthesized in large scale by chemical vapor deposition using BCl3 and SmCl3 as precursors at 1070 °C. Transmission electron microscopy observation and selected area electron diffraction analysis indicate that SmB6 nanowires are single-crystalline and grow in a preferred direction of [1 0 0]. It also indicates that the growth of SmB6 nanowires might be governed by a vapor–solid mechanism. Conventional four-terminal resistance measurements show that the resistance of an SmB6 nanowire increases with decreasing temperature, but saturates at temperatures less than 10 K, which might be attributed to a true topological insulator with a metallic surface and fully insulating bulk states. Resistance measurements also indicate that the contribution of surface states to conductance in the SmB6 nanowire is enhanced remarkably; therefore the high-quality single-crystalline SmB6 nanowires with large surface-to-bulk ratio might be the best candidate for investigating the topological properties of this material.

  9. Growth and Physical Property Study of Single Nanowire (Diameter ~45 nm) of Half Doped Manganite

    DOE PAGESBeta

    Datta, Subarna; Chandra, Sayan; Samanta, Sudeshna; Das, K.; Srikanth, H.; Ghosh, Barnali

    2013-01-01

    We repormore » t here the growth and characterization of functional oxide nanowire of hole doped manganite of La 0.5 Sr 0.5 MnO 3 (LSMO). We also report four-probe electrical resistance measurement of a single nanowire of LSMO (diameter ~45 nm) using focused ion beam (FIB) fabricated electrodes. The wires are fabricated by hydrothermal method using autoclave at a temperature of 270 °C. The elemental analysis and physical property like electrical resistivity are studied at an individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements are done by using Electron Energy Loss Spectroscopy (EELS) in the Transmission Electron Microscopy (TEM) mode. We address the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure, and physical properties. The nanowires used are found to have a ferromagnetic transition ( T C ) at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition. It is confirmed that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the measured temperature range which is similar to the bulk system.« less

  10. Nanojunctions in conducting polypyrrole single nanowire made by focused electron beam: Charge transport characteristics

    SciTech Connect

    Koo, Min Ho; Hong, Young Ki; Park, Dong Hyuk; Jo, Seong Gi; Joo, Jinsoo

    2011-07-15

    A focused electron (E)-beam with various doses was irradiated on the intended positions of conducting polypyrrole (PPy) single nanowire (NW) to fabricate nanojunctions. The current-voltage characteristics and their temperature dependence of the PPy single NW with nanojunctions were measured and analyzed. By increasing the E-beam dose and the number of nanojunctions, the current level of the single NW was dramatically decreased, and the conductance gap became more severe as the temperature decreased. The charge transport behavior varied from three-dimensional variable range hopping to fluctuation induced tunneling models, depending on the dose of focused E-beam. From micro-Raman spectra, the focused E-beam irradiation induced the de-doped states and conformational modification of polymer chains in the nanojunctions. The results suggest that the nanojunctions made by focused E-beam acted as a quasi-potential barrier for charge conduction in the conducting PPy single NW.

  11. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    NASA Astrophysics Data System (ADS)

    Lai, Yunfeng; Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-01

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (Vos). The MSS relates to the electrical-thermal induced distribution of the Vos which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  12. Ultrafast spectroscopy of stimulated emission in single ZnO tetrapod nanowires

    NASA Astrophysics Data System (ADS)

    Djurisic, A. B.; Kwok, W. M.; Leung, Y. H.; Chan, W. K.; Phillips, D. L.; Lin, M. S.; Gwo, S.

    2006-01-01

    Stimulated emission from single ZnO tetrapod nanowires was studied by time-resolved photoluminescence (TRPL) spectroscopy. The samples were excited by a 300 fs pulse and the emission spectra collected as a function of time. The spectra exhibit a change in the position and the shape of the emission peak with time. The time evolution of the emission spectra was studied for different pump excitation fluences. The spectra exhibited a blue shift with increasing pump fluence, while for all pump fluences a red shift of the peaks with time was obtained. Possible reasons for the observed behaviour are discussed.

  13. Strain Engineering of the Band Structure and Picosecond Carrier Dynamics of Single Semiconductor Nanowires Probed by Modulated Rayleigh Scattering Microscopy

    NASA Astrophysics Data System (ADS)

    Montazeri, Mohammad

    The band structure and carrier dynamics of GaAs, GaAs/GaP and InP semiconductor nanowires is explored using a variety of optical spectroscopy techniques including two newly developed techniques called Photomodulated and Transient Rayleigh scattering spectroscopy. The stress and electronic band structure of as-grown highly strained GaAs/GaP core/shell nanowire is studied via room temperature Raman scattering by phonons and low temperature photoluminescence spectroscopy. Raman measurements reveal the uniaxial nature of the shell-induced stress in the core GaAs nanowire with a significantly different degree of compression in the radial plane and axial direction of the nanowire. The uniaxial stress dramatically modifies the electronic band structure of the nanowire. Raman measurements predict that the shell-induced stress should shift the band gap of GaAs to higher energies by ~260 meV which is experimentally confirmed by low temperature photoluminescence spectroscopy. Furthermore, it is predicted that the uniaxial stress in the nanowire removes the degeneracy of the heavy and light hole valence bands at the zone center by ~100 meV. In order to probe the electronic band structure of single nanowires with high spatial and spectral resolution, the new technique of Photomodulated Rayleigh Scattering spectroscopy (PMRS) is introduced. We show that by photomodulating the dielectric function of the nanowire, the background-free and robust differential Rayleigh spectrum measures the band structure of the nanowire with exceptionally high energy resolution. PMRS measurements are performed on zincblende GaAs and zincblende and wurtzite InP nanowires at both room and low temperature. Furthermore, we show that the diameters of the nanowires can be extracted from the PMRS spectra with an uncertainty of only a few nanometers. By extending the PMRS spectroscopy into time domain, we introduce Transient Rayleigh Scattering spectroscopy (TRS) to study the ultrafast carrier dynamics and

  14. Waveguide integrated low noise NbTiN nanowire single-photon detectors with milli-Hz dark count rate

    PubMed Central

    Schuck, Carsten; Pernice, Wolfram H. P.; Tang, Hong X.

    2013-01-01

    Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon detection with low dark count rate and high timing accuracy. Here we present very low noise superconducting nanowire single-photon detectors based on NbTiN thin films patterned directly on top of Si3N4 waveguides. We systematically investigate a large variety of detector designs and characterize their detection noise performance. Milli-Hz dark count rates are demonstrated over the entire operating range of the nanowire detectors which also feature low timing jitter. The ultra-low dark count rate, in combination with the high detection efficiency inherent to our travelling wave detector geometry, gives rise to a measured noise equivalent power at the 10−20 W/Hz1/2 level. PMID:23714696

  15. Single CuO nanowires decorated with size-selected Pd nanoparticles for CO sensing in humid atmosphere

    NASA Astrophysics Data System (ADS)

    Steinhauer, Stephan; Singh, Vidyadhar; Cassidy, Cathal; Gspan, Christian; Grogger, Werner; Sowwan, Mukhles; Köck, Anton

    2015-05-01

    We report on conductometric gas sensors based on single CuO nanowires and compare the carbon monoxide (CO) sensing properties of pristine as well as Pd nanoparticle decorated devices in humid atmosphere. Magnetron sputter inert gas aggregation combined with a quadrupole mass filter for cluster size selection was used for single-step Pd nanoparticle deposition in the soft landing regime. Uniformly dispersed, crystalline Pd nanoparticles with size-selected diameters around 5 nm were deposited on single CuO nanowire devices in a four point configuration. During gas sensing experiments in humid synthetic air, significantly enhanced CO response for CuO nanowires decorated with Pd nanoparticles was observed, which validates that magnetron sputter gas aggregation is very well suited for the realization of nanoparticle-functionalized sensors with improved performance.

  16. Single CuO nanowires decorated with size-selected Pd nanoparticles for CO sensing in humid atmosphere.

    PubMed

    Steinhauer, Stephan; Singh, Vidyadhar; Cassidy, Cathal; Gspan, Christian; Grogger, Werner; Sowwan, Mukhles; Köck, Anton

    2015-05-01

    We report on conductometric gas sensors based on single CuO nanowires and compare the carbon monoxide (CO) sensing properties of pristine as well as Pd nanoparticle decorated devices in humid atmosphere. Magnetron sputter inert gas aggregation combined with a quadrupole mass filter for cluster size selection was used for single-step Pd nanoparticle deposition in the soft landing regime. Uniformly dispersed, crystalline Pd nanoparticles with size-selected diameters around 5 nm were deposited on single CuO nanowire devices in a four point configuration. During gas sensing experiments in humid synthetic air, significantly enhanced CO response for CuO nanowires decorated with Pd nanoparticles was observed, which validates that magnetron sputter gas aggregation is very well suited for the realization of nanoparticle-functionalized sensors with improved performance. PMID:25854640

  17. Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes

    NASA Astrophysics Data System (ADS)

    He, Maoqi; Mohammad, S. Noor

    2006-02-01

    The strength and versatility of a chemical-vapor deposition technique for thin, long, uniform, single-crystal, good-quality nanowire growth, without the use of template, have been described. Remarkably, while the full width at half maximum of a high-quality GaN thin film is 4 meV, that of a GaN whisker is 9 meV, which confirms high quality of the grown whiskers and nanowires. The versatility of the method is reflected by its ability to produce II-VI and III-V binary, ternary, and even, for the first time, quaternary nanowires in a controlled manner. The same versatility enables the realization of both cubic and hexagonal phases of nanowires and nanotubes. Chemical-vapor deposition technique generally makes use of highly poisonous arsine and phosphine for the synthesis of As- and P-based films. The present one is free from this shortcoming; it can produce As- and P-based nanowires without the use of these poisonous gases. A notable feature of the method is that properties of nanowires thus synthesized depend strongly on their shape, size, and geometry, and that certain growth conditions can only lead to such shapes and sizes.

  18. Nanostructures of the binary nitrides, BN, TiN, and NbN, prepared by the urea-route

    SciTech Connect

    Gomathi, A.; Rao, C.N.R. . E-mail: cnrrao@jncasr.ac.in

    2006-05-25

    By heating mixtures of H{sub 3}BO{sub 3}, TiCl{sub 4}, and NbCl{sub 5} with urea in 1:6 molar ratios in the 900-1000 deg. C range, nanoparticles of BN, TiN, and NbN have been obtained, respectively. The nanoparticles are crystalline and have been characterized by electron microscopy and other techniques. By carrying out the urea reaction over Au islands deposited on Si substrates, nanowires of TiN could be obtained.

  19. Current-phase relationship of granular NbN weak links, inferred from Josephson interferometer characteristics

    SciTech Connect

    Claassen, J.H.

    1982-05-01

    Small-area dc superconducting quantum interference devices (SQUID's) were made using ultra-short variable-thickness microbridges of NbN. The bridges had an effective length of approx.500 A and a width of approx.1.5 ..mu..m. Analysis of the response to magnetic flux permits interferences to be drawn about the current-phase relationship (CPR) of the bridges. Contrary to predictions of Ginzburg--Landau theory for microbridges of these dimensions, it is found that the CPR is single valued and probably close to ideal (sinusoidal) over a large temperature range (>2.5 K). The discrepancy with theory may be due to the granular nature of the NbN films.

  20. Concerted single-nanowire absorption and emission spectroscopy: Explaining the origin of the size-dependent Stokes shift in single cadmium selenide nanowires

    NASA Astrophysics Data System (ADS)

    Vietmeyer, F.; Chatterjee, R.; McDonald, M. P.; Kuno, M.

    2015-02-01

    Concerted single-nanowire (NW) absorption and emission spectroscopies have been used to measure Stokes shifts in the optical response of individual CdSe NWs. Obtained spectra are free of inhomogeneous broadening inherent to ensemble measurements. They reveal apparent size-dependent NW Stokes shifts with magnitudes on the order of 30 meV. Given that an effective mass model previously used to explain CdSe NW excited state progressions predicts no sizable emission Stokes shift, we have investigated modifications to the theory to rationalize their existence. This has entailed better accounting for the effects of crystal field splitting on NW band edge states. What results are important changes to the spectroscopic assignment of NW band edge transitions that arise from the crossing of hole levels. Furthermore, these modifications simultaneously predict Stokes shifts with size-dependent magnitudes up to 20 meV. However, quantitative agreement with experiment is only achieved by accounting for the role of exciton trap states. Consequently, we conclude that CdSe NW Stokes shifts contain both intrinsic and extrinsic contributions—the latter arising from band edge exciton potential energy fluctuations. At a broader level, these concerted absorption and emission measurements have provided detailed insight into the electronic structure of CdSe NWs, beyond what could be obtained using either single-particle absorption or emission spectroscopies alone.

  1. Metastable Copper-Phthalocyanine Single-Crystal Nanowires and Their Use in Fabricating High-Performance Field-Effect Transistors

    SciTech Connect

    Xiao, Kai; Li, Rongjin; Tao, Jing; Payzant, E Andrew; Ivanov, Ilia N; Puretzky, Alexander A; Hu, Wenping; Geohegan, David B

    2009-01-01

    This paper describes a simple, vapor-phase route to the synthesis of metastable α-phase copper-phthalocyanine (CuPc) single-crystal nanowires through control of the growth temperature. The influence of the growth temperature on the crystal structures, morphology, and size of the CuPc nanostructures was explored by XRD, optical absorption and Transmission Electron Microscopy (TEM). α-CuPc nanowires were successfully incorporated as active semiconductors in field-effect transistors (FETs). Single nanowire devices exhibited the carrier mobilities and current on/off ratios as high as 0.4 cm2/Vs and > 104, respectively, rendering them useful for organic photovoltaic cells, organic light-emitting diodes, field-effect transistors, memories and gas sensors

  2. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current–temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  3. Study of the Electrochemical System of Antimony-Tellurium in Dimethyl Sulfoxide for Growth of Nanowire Arrays, and an Innovative Method for Single Nanowire Measurements

    NASA Astrophysics Data System (ADS)

    Kalisman, Philip Taubman

    There is a strong interest in thermoelectric materials for energy production and savings. The properties which are integral to thermoelectric performance are typically linked, typically changing one of these properties for the better will change another for the worse. The intertwined nature of these properties has limited bulk thermoelectrics to low efficiencies, which has curbed their use to only niche applications. There has been theoretical and experimental work which has shown that limiting these materials in one or more dimensions will result in deconvolution of properties. Nanowires of well established thermoelectrics should show impressively high performance. Tellurium is attractive in many fields, including thermoelectrics. Nanowires of tellurium have been grown, but with limited success and with out the ability to dope the tellurium. Working on previous work with other systems, tellurium was studied in dimethyl sulfoxide (DMSO). The electrochemical system of tellurium was found to be quite dierent from its aqueous analog, but through comprehensive cyclic voltammetric study, all events were identified and explained. The binary antimony-tellurium system was also studied, as doping of tellurium is integral for many applications. Cyclic voltammograms of this system were studied, and the insight from these studies was used to grow nanowire arrays. Arrays of tellurium were grown and analysis showed that by using DMSO, antimony doped tellurium nanowire arrays could be grown. Furthermore, analysis showed that the antimony doped tellurium interstitially, resulting in a n-type material. Measurements were also performed on arrays and individual wires. Arrays of 1.15% antimony showed ZT of 0.092, with the low ZT attributed to poor contact methods. Although contacting was an obstacle towards measuring whole arrays, single wire measurements were also performed. Single wire measurements were done by a novel method which allows for easy, reproducible measurements of wire

  4. Single-crystalline δ-Ni2Si nanowires with excellent physical properties.

    PubMed

    Chiu, Wen-Li; Chiu, Chung-Hua; Chen, Jui-Yuan; Huang, Chun-Wei; Huang, Yu-Ting; Lu, Kuo-Chang; Hsin, Cheng-Lun; Yeh, Ping-Hung; Wu, Wen-Wei

    2013-01-01

    In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation. PMID:23782805

  5. Single-crystalline δ-Ni2Si nanowires with excellent physical properties

    PubMed Central

    2013-01-01

    In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation. PMID:23782805

  6. Dielectrophoretic investigation of Bi2Te3 nanowires—a microfabricated thermoelectric characterization platform for measuring the thermoelectric and structural properties of single nanowires

    NASA Astrophysics Data System (ADS)

    Wang, Zhi; Kojda, Danny; Peranio, Nicola; Kroener, Michael; Mitdank, Rüdiger; Toellner, William; Nielsch, Kornelius; Fischer, Saskia F.; Gutsch, Sebastian; Zacharias, Margit; Eibl, Oliver; Woias, Peter

    2015-03-01

    In this article a microfabricated thermoelectric nanowire characterization platform to investigate the thermoelectric and structural properties of single nanowires is presented. By means of dielectrophoresis (DEP), a method to manipulate and orient nanowires in a controlled way to assemble them onto our measurement platform is introduced. The thermoelectric platform fabricated with optimally designed DEP electrodes results in a yield of nanowire assembly of approximately 90% under an applied peak-to-peak ac signal Vpp = 10 V and frequency f = 20 MHz within a series of 200 experiments. Ohmic contacts between the aligned single nanowire and the electrodes on the platform are established by electron beam-induced deposition. The Seebeck coefficient and electrical conductivity of electrochemically synthesized Bi2Te3 nanowires are measured to be -51 μV K-1 and (943 ± 160)/(Ω-1 cm-1), respectively. Chemical composition and crystallographic structure are obtained using transmission electron microscopy. The selected nanowire is observed to be single crystalline over its entire length and no grain boundaries are detected. At the surface of the nanowire, 66.1 ± 1.1 at.% Te and 34.9 ± 1.1 at.% Bi are observed. In contrast, chemical composition of 64.2 at.% Te and 35.8 at.% Bi is detected in the thick center of the nanowire.

  7. Nanowires: A Lattice-Strained Organic Single-Crystal Nanowire Array Fabricated via Solution-Phase Nanograting-Assisted Pattern Transfer for Use in High-Mobility Organic Field-Effect Transistors (Adv. Mater. 16/2016).

    PubMed

    Kim, Kyunghun; Rho, Yecheol; Kim, Yebyeol; Kim, Se Hyun; Hahm, Suk Gyu; Park, Chan Eon

    2016-04-01

    S. H. Kim, S. G. Hahm, C. E. Park, and co-workers fabricate a 50 nm-wide organic single-crystalline nanowire array on a centimeter-sized substrate via a facile roll-to-plate process, as described on page 3209. Nanowire growth in a nano-confined space adopts a lattice-strained and single-crystalline packing motif, which can be harnessed for strong intermolecular electronic coupling. Thus, nanowire-based field-effect transistors show extremely high field-effect mobilities up to 9.71 cm(2) V(-1) s(-1) . PMID:27105809

  8. Synthesis and chemical modification of single-walled carbon nanotubes and inorganic nanowires

    NASA Astrophysics Data System (ADS)

    Zheng, Bo

    This dissertation describes the study of single-walled carbon nanotubes (SWNTs), inorganic nanowires, and carbon aerogels. A novel catalyst of iron/molybdenum nanoparticles supported on alumina aerogel was developed for CVD synthesis of SWNTs. Using this catalyst, the yield of SWNTs was enhanced by at least three times compared to previously reported best results. The highest yield of SWNTs was achieved when the reaction temperature was between 850°C and 900°C with CO (˜1000 sccm) as feeding gas. A combination of acid wash and mild oxidation processes was used to purify tire raw SWNT product. Transmission electron microscopy (TEM) and thermogravimetric analysis (TGA) indicated that the majority (>90%) of the purified product was SWNTs. The purified SWNTs were fluorinated by diluted fluorine gas at 250°C. It was found that F-SWNTs could be recovered at an annealing temperature as low as 100°C. The thermal recovery behaviors of metallic and semiconducting SWNTs were very similar at annealing temperature ≥150°C, as suggested by 2D UV-Vis-NIR correlation spectroscopy. F-SWNTs were also added into poly(ethylene oxide) (PEO) to form a PEO/F-SWNT composite. Mechanical properties measurements showed that the F-SWNTs significantly increased the strength of the resulting composite. A highly efficient method of SWNT synthesis on surfaces was also developed. It was found that the combination of carbon monoxide and hydrogen as a feeding gas greatly enhanced the surface growth of SWNTs. This method showed a large window of optimal HZ concentration (20%--80%) and synthesis temperature (800--900°C), so the result was very reproducible. In the second project, two novel methods of preparing silicon oxide and tungsten oxide nanowires, respectively, were developed. By using a millimeter-sized liquid gallium ball as a metal solvent at 920--940°C, bulk quantities of ultralong, uniform and well-aligned silicon oxide nanowires were synthesized. XPS and EDX indicated that the

  9. Ternary Synaptic Plasticity Arising from Memdiode Behavior of TiOx Single Nanowire

    NASA Astrophysics Data System (ADS)

    Hong, Deshun; Chen, Yuansha; Sun, Jirong; Shen, Baogen; Group 3 of Magnetism Laboratory, Beijing National Laboratory for Condensed Matter Physics Team

    Electric field-induced resistive switching (RS) effect has been widely explored as a novel nonvolatile memory over the past few years. Recently, the RS behavior with continuous transition has received considerable attention for its promising prospect in neuromorphic simulation. Here, the switching characteristics of a planar-structured TiOx single nanowire device were systematically investigated. It exhibited a strong electrical history-dependent rectifying behavior that was defined as a ''memdiode''. We further demonstrated that a ternary synaptic plasticity could be realized in such a TiOx nanowire device, characterized by the resistance and photocurrent responses. For a given state of the memdiode, a conjugated memristive characteristic and a distinct photocurrent can be simulaneously obtained, resulting in a synchronous implementation of various Hebbian plasticities with the same temporal order of spikes. These intriguing properties of TiOx memdiode provide a feasible way toward the designing of multifunctional electronic synapses as well as programmable artificial neural network This work has been partially supported by the National Basic Research of China (2013CB921700), the ``Strategic Priority Research Program (B)'' of the Chinese Academy of Sciences (XDB07030200) and the National Natural Science Foundation of China (11374339).

  10. Frequency-resolved optical gating measurement of ultrashort pulses by using single nanowire

    PubMed Central

    Yu, Jiaxin; Liao, Feng; Gu, Fuxing; Zeng, Heping

    2016-01-01

    The use of ultrashort pulses for fundamental studies and applications has been increasing rapidly in the past decades. Along with the development of ultrashort lasers, exploring new pulse diagnositic approaches with higher signal-to-noise ratio have attracted great scientific and technological interests. In this work, we demonstrate a simple technique of ultrashort pulses characterization with a single semiconductor nanowire. By performing a frequency-resolved optical gating method with a ZnO nanowire coupled to tapered optical microfibers, the phase and amplitude of a pulse series are extracted. The generated signals from the transverse frequency conversion process can be spatially distinguished from the input, so the signal-to-noise ratio is improved and permits lower energy pulses to be identified. Besides, since the nanometer scale of the nonlinear medium provides relaxed phase-matching constraints, a measurement of 300-nm-wide supercontinuum pulses is achieved. This system is highly compatible with standard optical fiber systems, and shows a great potential for applications such as on-chip optical communication. PMID:27609521

  11. Stability of a current carrying single nanowire of tungsten (W) deposited by focused ion beam

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    2016-02-01

    We report an investigation on the stability of single W nanowire (NW) under direct current stressing. The NW of width ≈ 80 nm and thickness ≈ 100 nm was deposited on a SiO2/Si substrate by Focused Ion Beam (FIB) of Ga ions using W(CO)6 as a precursor. Such nanowires, used as interconnects in nanoelectronics, contain C and Ga in addition to W. The stability studies, done for the first time in such FIB deposited NWs, show that under current stressing these NWs behave very differently from that observed in conventional metal NWs or interconnects. The failure of such FIB deposited NW occurs at a relatively low current density (˜1011 A/m2) which is an order or more less than that seen in conventional metal NWs. The failure accompanies with formation of voids and hillocks, suggesting ionic migration as the cause of failure. However, the polarities of void and hillock formations are opposite to those observed in conventional metal interconnects. This observation along with preferential agglomeration of Ga ions in hillocks suggests that the ionic migration in such NWs is dominated by direct force as opposed to the migration driven by electron wind force in conventional metal interconnects.

  12. Frequency-resolved optical gating measurement of ultrashort pulses by using single nanowire.

    PubMed

    Yu, Jiaxin; Liao, Feng; Gu, Fuxing; Zeng, Heping

    2016-01-01

    The use of ultrashort pulses for fundamental studies and applications has been increasing rapidly in the past decades. Along with the development of ultrashort lasers, exploring new pulse diagnositic approaches with higher signal-to-noise ratio have attracted great scientific and technological interests. In this work, we demonstrate a simple technique of ultrashort pulses characterization with a single semiconductor nanowire. By performing a frequency-resolved optical gating method with a ZnO nanowire coupled to tapered optical microfibers, the phase and amplitude of a pulse series are extracted. The generated signals from the transverse frequency conversion process can be spatially distinguished from the input, so the signal-to-noise ratio is improved and permits lower energy pulses to be identified. Besides, since the nanometer scale of the nonlinear medium provides relaxed phase-matching constraints, a measurement of 300-nm-wide supercontinuum pulses is achieved. This system is highly compatible with standard optical fiber systems, and shows a great potential for applications such as on-chip optical communication. PMID:27609521

  13. Full characterization of small volume NbN HEB mixers for Space Applications

    NASA Astrophysics Data System (ADS)

    Baselmans, J.; Kooi, J.; Baryshev, A.; Yang, Z. Q.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.

    2005-05-01

    NbN phonon cooled HEB's are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by measuring the receiver noise temperature at a given IF frequency, usually around 1 - 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer.

  14. Characterization of single-crystalline PbTiO3 nanowire growth via surfactant-free hydrothermal method

    NASA Astrophysics Data System (ADS)

    Gu, Haoshuang; Hu, Yongming; You, Jing; Hu, Zhenglong; Yuan, Ying; Zhang, Tianjin

    2007-01-01

    In this work, we present the results obtained in fabrication and characterization of single-crystalline lead titanate nanowires synthesized by surfactant-free hydrothermal method at 200°C. The as-prepared samples were characterized by means of x-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, selected-area electron diffraction, x-ray photoelectron spectroscopy (XPS), thermogravimetry and differential thermal analysis, Fourier transformation infrared spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and ultraviolet-visible spectroscopy. The results show that the products have a tetragonal perovskite structure without any other impurity phase, which are made up of a large quantity of nanowires with uniform diameters of about 12nm and lengths reaching up to 5μm, and the growth of nanowires is generally along the [001] direction. XPS result shows that the binding energy of Ti2p(3/2) core level peak for PbTiO3 nanowires is larger than that of the corresponding ceramics and leads to the larger spin-orbit splitting (Δ[2p(3/2)-2p(1/2)]) for Ti2p. Raman studies show that the vibration modes of nanowires redshifted and broadened, which have shorter phonon lifetime compared to that of bulk materials. A blue light emission peaking at about 471nm (2.63eV ) is observed at room temperature, oxygen vacancies are responsible for the luminescence in PbTiO3 nanowires. The band gap energy for PbTiO3 nanowires was about 4.15eV.

  15. Effects of post-deposition annealing on the mechanical and chemical properties of the Si 3N 4/NbN multilayer coatings

    NASA Astrophysics Data System (ADS)

    Jeong, J. J.; Lee, C. M.

    2003-05-01

    Multilayered thin films consisting of alternate layers of silicon nitride (Si 3N 4) and niobium nitride (NbN) have been prepared by a dc reactive sputtering technique in nitrogen and argon atmosphere using high purity Nb and Si targets for various flow ratios of N 2/Ar. It has been found that the hardness of the multilayered system is higher than that of the constituent individual layers of equal thickness. Although a single layer of amorphous Si 3N 4 has higher hardness compared with a single layer of nanocrystalline NbN at all the deposition conditions used in this experiment, the hardness of the multilayer coatings consisting of consecutive Si 3N 4/NbN layers strongly follows the hardness variation of the polycrystalline NbN. When the multilayer coatings are subjected to post-deposition annealing at high temperatures, it has been found that both the hardness and the adhesion strength of the coating decrease with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) results reveal that oxidation of the coatings during annealing plays a crucial role behind such deterioration in mechanical properties. Further, it has been noted that NbN is a more oxidation resistant material than Si 3N 4. Therefore, it has been proposed that during preparation of multilayers with consecutive thin layers of NbN and Si 3N 4, the topmost layer should be made of NbN, instead of Si 3N 4, to prevent the oxygen diffusion from the top surface layer to the next layer underneath.

  16. Traceable calibration of a fibre-coupled superconducting nano-wire single photon detector using characterized synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Müller, Ingmar; Klein, Roman M.; Werner, Lutz

    2014-12-01

    Radiometric calibrations of fibre-coupled single photon detectors are experiencing growing demand, especially at the telecommunication wavelengths. In this paper, the radiometric calibration of a fibre-coupled superconducting nano-wire single photon detector at the telecom wavelength 1.55 µm by means of well-characterized synchrotron radiation is described. This substitution method is based on the unique properties of synchrotron radiation and the Metrology Light Source, the dedicated electron storage ring of the Physikalisch-Technische Bundesanstalt, and is suitable for fibre-coupled single photon detectors. The Metrology Light Source is used as a light source with a high dynamic range of the radiant power to bridge the radiometric gap occurring in the transition from radiant power measurements and the counting of photons with single photon detectors. Very low uncertainties below 2% have been achieved in the measurement of the detection efficiency of a fibre-coupled superconducting nano-wire single photon detector.

  17. Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

    SciTech Connect

    Nogues, Gilles Den Hertog, Martien; Auzelle, Thomas; Gayral, Bruno; Daudin, Bruno

    2014-03-10

    We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.

  18. Synthesis, Structural Characterization, and Electronic Structure of Single-Crystalline CuxV2O5 Nanowires

    SciTech Connect

    Patridge, C.; Jaye, C; Zhang, H; Marschilok, A; Fischer, D; Takeuchi, E; Banerjee, S

    2009-01-01

    Single-crystalline copper vanadium oxide nanowires ??-CuxV2O5 (x 0.60) have been synthesized by the hydrothermal reduction of bulk CuV2O6 using small-molecule aliphatic alcohols as reducing agents. The prepared copper vanadium bronze nanowires are metallic in nature and exhibit aspect ratios as high as 300. The recent discovery of superconductivity and charge disproportionation in bulk ??-CuxV2O5 has led to renewed interest in these one-dimensional metallic systems. Scaling these systems to nanoscale dimensions offers the potential for further tunability of electronic transport and Li-ion intercalation kinetics. A combination of spectroscopic and electrical measurement methods has been used to provide evidence for the metallic nature and the presence of room-temperature charge disproportionation in these nanowires.

  19. Single-crystalline nanogap electrodes: enhancing the nanowire-breakdown process with a gaseous environment.

    PubMed

    Suga, Hiroshi; Sumiya, Touru; Furuta, Shigeo; Ueki, Ryuichi; Miyazawa, Yosuke; Nishijima, Takuya; Fujita, Jun-ichi; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2012-10-24

    A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was evaluated using scanning electron microscopy and transmission electron microscopy. Nanogap electrodes sandwiched between Pt-large-crystal-grains were obtained by the breakdown of the wire in an O(2) or H(2) atmosphere. These nanogap electrodes show intense spots in the electron diffraction pattern. The diffraction pattern corresponds to Pt (111), indicating that single-crystal grains are grown by the electrical wire breakdown process in an O(2) or H(2) atmosphere. The Pt wires that have (111)-texture and coherent boundaries can be considered ideal as interconnectors for single molecular electronics. The simple method for fabrication of a single-crystalline nanogap is one of the first steps toward standard nanogap electrodes for single molecular instruments and opens the door to future research on physical phenomena in nanospaces. PMID:23054205

  20. Fabrication of a wafer-scale uniform array of single-crystal organic nanowire complementary inverters by nanotransfer printing

    NASA Astrophysics Data System (ADS)

    Park, Kyung Sun; Baek, Jangmi; Koo Lee, Yong-Eun; Sung, Myung Mo

    2015-02-01

    We report the fabrication and electrical characterization of a wafer-scale array of organic complementary inverters using single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p- and n-channels, respectively. Two arrays of single-crystal organic nanowires were generated consecutively on desired locations of a common substrate with a desired mutual alignment by a direct printing method (liquid-bridge-mediated nanotransfer molding). Another direct printing of silver micron scale structures, as source and drain electrodes, on the substrate with the two printed nanowire arrays produced an array of complementary inverters with a bottom gate, top contact configuration. Field-effect mobilities of single-crystal TIPS-PEN and C60 nanowire field-effect transistors (FETs) in the arrays were uniform with 1.01 ± 0.14 and 0.10 ± 0.01 cm2V-1 s-1, respectively. A wafer-scale array of complementary inverters produced all by the direct printing method showed good performance with an average gain of 25 and with low variations among the inverters.

  1. An ultra-fast superconducting Nb nanowire single-photon detector for soft x-rays

    SciTech Connect

    Inderbitzin, K.; Engel, A.; Schilling, A.; Il'in, K.; Siegel, M.

    2012-10-15

    Although superconducting nanowire single-photon detectors (SNSPDs) are well studied regarding the detection of infrared/optical photons and keV-molecules, no studies on continuous x-ray photon counting by thick-film detectors have been reported so far. We fabricated a 100 nm thick niobium x-ray SNSPD (an X-SNSPD) and studied its detection capability of photons with keV-energies in continuous mode. The detector is capable to detect photons even at reduced bias currents of 0.4%, which is in sharp contrast to optical thin-film SNSPDs. No dark counts were recorded in extended measurement periods. Strikingly, the signal amplitude distribution depends significantly on the photon energy spectrum.

  2. Vibrational response of free standing single copper nanowire through transient reflectivity microscopy

    NASA Astrophysics Data System (ADS)

    Belliard, Laurent; Cornelius, Thomas W.; Perrin, Bernard; Kacemi, Nazim; Becerra, Loïc; Thomas, Olivier; Eugenia Toimil-Molares, Maria; Cassinelli, Marco

    2013-11-01

    We report on the ultrafast vibrational response of single copper nanowires investigated by femtosecond transient reflectivity measurements. The oscillations of the sample reflectivity are correlated with individual modes of resonance for wires with a diameter ranging from 100 to 500 nm and are compared with 2D finite element simulation. Fluctuation of the sample-substrate coupling is illustrated through its effect on the damping rate. We demonstrate elastic confinement in free standing wires which allowed the detection of up to the third harmonic of the breathing mode. By removing the energy relaxation channel towards the substrate, we obtained nano-oscillators with quality factors up to 130. Finally, taking advantage of the very high spectral resolution achieved on free standing wires, we could observe the elastic coupling between two close wires via their polymer cladding.

  3. Design of a polarization-insensitive superconducting nanowire single photon detector with high detection efficiency.

    PubMed

    Zheng, Fan; Xu, Ruiying; Zhu, Guanghao; Jin, Biaobing; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

    2016-01-01

    Superconducting nanowire single photon detectors (SNSPDs) deliver superior performance over their competitors in the near-infrared regime. However, these detectors have an intrinsic polarization dependence on the incident wave because of their one-dimensional meander structure. In this paper, we propose an approach to eliminate the polarization sensitivity of SNSPDs by using near-field optics to increase the absorption of SNSPDs under transverse magnetic (TM) illumination. In addition, an optical cavity is added to our SNSPD to obtain nearly perfect absorption of the incident wave. Numerical simulations show that the maximum absorption of a designed SNSPD can reach 96% at 1550 nm, and indicate that the absorption difference between transverse electric (TE) and TM polarization is less than 0.5% across a wavelength window of 300 nm. Our work provides the first demonstration of the possibility of designing a polarization-insensitive and highly efficient SNSPD without performing device symmetry improvements. PMID:26948672

  4. Limiting efficiency calculation of silicon single-nanowire solar cells with considering Auger recombination

    SciTech Connect

    Zhai, Xiongfei; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng

    2015-02-09

    Single-nanowire solar cells (SNSCs) have attracted considerable attention due to their unique light-harvesting capability mediated by the optical antenna effect and the high photoconversion efficiency due to the orthogonalization of the carrier collection to the photon incidence. We present a detailed prediction of the light-conversion efficiency of Si SNSCs based on finite-element simulation and thermodynamic balance analysis, with especially focusing on the comparison between SNSCs and film systems. Carrier losses due to radiative and Auger recombinations are introduced in the analysis of the limiting efficiency, which show that the Auger recombination plays a key role in accurately predicting the efficiency of Si SNSCs, otherwise, the device performance would be strongly overestimated. The study paves a more realistic way to evaluate the nanostructured solar cells based on indirect-band photoactive materials.

  5. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    SciTech Connect

    Lai, Yunfeng Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-19

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  6. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    SciTech Connect

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-07

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y{sub 0.15}Zr{sub 0.85}O{sub 2}) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  7. Formation and Stabilization of Single-Crystalline Metastable AuGe Phases in Ge Nanowires

    SciTech Connect

    Sutter, E.; Sutter, P.

    2011-07-22

    We use in situ observations by variable temperature transmission electron microscopy on AuGe alloy drops at the tips of Ge nanowires (NWs) with systematically varying composition to demonstrate the controlled formation of metastable solid phases integrated in NWs. The process, which operates in the regime of vapor-liquid-solid growth, involves a size-dependent depression of the alloy liquidus at the nanoscale that leads to extremely Ge-rich AuGe melts at low temperatures. During slow cooling, these liquid AuGe alloy drops show pronounced departures from equilibrium, i.e., a frustrated phase separation of Ge into the adjacent solid NW, and ultimately crystallize as single-crystalline segments of metastable {gamma}-AuGe. Our findings demonstrate a general avenue for synthesizing NW heterostructures containing stable and metastable solid phases, applicable to a wide range of materials of which NWs form by the vapor-liquid-solid method.

  8. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    NASA Astrophysics Data System (ADS)

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-01

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y0.15Zr0.85O2) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  9. Design of a polarization-insensitive superconducting nanowire single photon detector with high detection efficiency

    PubMed Central

    Zheng, Fan; Xu, Ruiying; Zhu, Guanghao; Jin, Biaobing; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

    2016-01-01

    Superconducting nanowire single photon detectors (SNSPDs) deliver superior performance over their competitors in the near-infrared regime. However, these detectors have an intrinsic polarization dependence on the incident wave because of their one-dimensional meander structure. In this paper, we propose an approach to eliminate the polarization sensitivity of SNSPDs by using near-field optics to increase the absorption of SNSPDs under transverse magnetic (TM) illumination. In addition, an optical cavity is added to our SNSPD to obtain nearly perfect absorption of the incident wave. Numerical simulations show that the maximum absorption of a designed SNSPD can reach 96% at 1550 nm, and indicate that the absorption difference between transverse electric (TE) and TM polarization is less than 0.5% across a wavelength window of 300 nm. Our work provides the first demonstration of the possibility of designing a polarization-insensitive and highly efficient SNSPD without performing device symmetry improvements. PMID:26948672

  10. Influence of electron–phonon interactions in single dopant nanowire transistors

    SciTech Connect

    Carrillo-Nuñez, H. Bescond, M. Cavassilas, N.; Dib, E.; Lannoo, M.

    2014-10-28

    Single dopant nanowire transistors can be viewed as the ultimate miniaturization of nano electronic devices. In this work, we theoretically investigate the influence of the electron-phonon coupling on their transport properties using a non-equilibrium Green's function approach in the self-consistent Born approximation. For an impurity located at the center of the wire we find that, at room temperature, acoustic phonons broaden the impurity level so that the bistability predicted in the ballistic regime is suppressed. Optical phonons are found to have a beneficial impact on carrier transport via a phonon-assisted tunneling effect. We discuss the position and temperature dependence of these effects, showing that such systems might be very promising for engineering of ultimate devices.

  11. Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

    NASA Astrophysics Data System (ADS)

    González-Posada, F.; Songmuang, R.; Den Hertog, M.; Monroy, E.

    2013-05-01

    In this work, we compare the photodetector performance of single nearly defect-free undoped and n-i-n GaN nanowires (NWs). Undoped NWs present a dark current three orders of magnitude lower than n-i-n structures, about ten times lower gain, and a strong dependence of the measurement environment. In vacuum, undoped NWs react with an increase of their responsivity, accompanied by stronger nonlinearities and persistent photoconductivity effects. This behavior is attributed to the unpinned Fermi level at the m-plane NW sidewalls, which enhances the role of surface states in the photodetection dynamics. In the air, adsorbed oxygen accelerates the carrier dynamics at the price of reducing the photoresponse. In contrast, in n-i-n NWs, the Fermi level pinning at the contact regions limits the photoinduced sweep of the surface band bending, hence reducing the environment sensitivity and preventing persistent effects even in vacuum.

  12. Vertical Single-Crystalline Organic Nanowires on Graphene: Solution-Phase Epitaxy and Optical Microcavities.

    PubMed

    Zheng, Jian-Yao; Xu, Hongjun; Wang, Jing Jing; Winters, Sinéad; Motta, Carlo; Karademir, Ertuğrul; Zhu, Weigang; Varrla, Eswaraiah; Duesberg, Georg S; Sanvito, Stefano; Hu, Wenping; Donegan, John F

    2016-08-10

    Vertically aligned nanowires (NWs) of single crystal semiconductors have attracted a great deal of interest in the past few years. They have strong potential to be used in device structures with high density and with intriguing optoelectronic properties. However, fabricating such nanowire structures using organic semiconducting materials remains technically challenging. Here we report a simple procedure for the synthesis of crystalline 9,10-bis(phenylethynyl) anthracene (BPEA) NWs on a graphene surface utilizing a solution-phase van der Waals (vdW) epitaxial strategy. The wires are found to grow preferentially in a vertical direction on the surface of graphene. Structural characterization and first-principles ab initio simulations were performed to investigate the epitaxial growth and the molecular orientation of the BPEA molecules on graphene was studied, revealing the role of interactions at the graphene-BPEA interface in determining the molecular orientation. These free-standing NWs showed not only efficient optical waveguiding with low loss along the NW but also confinement of light between the two end facets of the NW forming a microcavity Fabry-Pérot resonator. From an analysis of the optical dispersion within such NW microcavities, we observed strong slowing of the waveguided light with a group velocity reduced to one-tenth the speed of light. Applications of the vertical single-crystalline organic NWs grown on graphene will benefit from a combination of the unique electronic properties and flexibility of graphene and the tunable optical and electronic properties of organic NWs. Therefore, these vertical organic NW arrays on graphene offer the potential for realizing future on-chip light sources. PMID:27438189

  13. Elucidating the localized plasmonic enhancement effects from a single Ag nanowire in organic solar cells.

    PubMed

    Liu, Xinfeng; Wu, Bo; Zhang, Qing; Yip, Jing Ngei; Yu, Guannan; Xiong, Qihua; Mathews, Nripan; Sum, Tze Chien

    2014-10-28

    The origins of performance enhancement in hybrid plasmonic organic photovoltaic devices are often embroiled in a complex interaction of light scattering, localized surface plasmon resonances, exciton-plasmon energy transfer and even nonplasmonic effects. To clearly deconvolve the plasmonic contributions from a single nanostructure, we herein investigate the influence of a single silver nanowire (NW) on the charge carriers in bulk heterojunction polymer solar cells using spatially resolved optical spectroscopy, and correlate to electrical device characterization. Polarization-dependent photocurrent enhancements with a maximum of ∼ 36% over the reference are observed when the transverse mode of the plasmonic excitations in the Ag NW is activated. The ensuing higher absorbance and light scattering induced by the electronic motion perpendicular to the NW long axis lead to increased exciton and polaron densities instead of direct surface plasmon-exciton energy transfer. Finite-difference time-domain simulations also validate these findings. Importantly, our study at the single nanostructure level explores the fundamental limits of plasmonic enhancement achievable in organic solar cells with a single plasmonic nanostructure. PMID:25198060

  14. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    SciTech Connect

    Pud, S.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.; Gasparyan, F.; Petrychuk, M.

    2014-06-21

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  15. Simultaneous integration of different nanowires on single textured Si (100) substrates.

    PubMed

    Rieger, Torsten; Rosenbach, Daniel; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

    2015-03-11

    By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III-V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample. PMID:25650521

  16. Single nanowire on graphene (SNOG) as an efficient, reproducible, and stable SERS-active platform

    NASA Astrophysics Data System (ADS)

    Kim, Hongki; Seol, Myeong-Lok; Lee, Dong-Il; Lee, Jiyoung; Kang, Il-Suk; Lee, Hyoban; Kang, Taejoon; Choi, Yang-Kyu; Kim, Bongsoo

    2016-04-01

    Developing a well-defined nanostructure that can provide strong, reproducible, and stable SERS signals is quite important for the practical application of surface-enhanced Raman scattering (SERS) sensors. We report here a novel single nanowire (NW) on graphene (SNOG) structure as an efficient, reproducible, and stable SERS-active platform. Au NWs having a well-defined single-crystal geometry on a monolayer graphene-coated metal film can form a well-defined, continuous nanogap structure that provides extremely reproducible and stable SERS signals. The in-NW reproducibility was verified by 2-dimensional Raman mapping, and the NW-to-NW reproducibility was verified by the cumulative curves of 32 SERS spectra. The simulation also indicated that a highly regular, line-shaped hot spot formed between the Au NW and graphene. Furthermore, SNOG platforms showed improved photostability and long-term oxidation immunity. We anticipate that SNOG platforms will be appropriate for practical biological and chemical sensor applications that demand reproducible, stable, and strong signal production.Developing a well-defined nanostructure that can provide strong, reproducible, and stable SERS signals is quite important for the practical application of surface-enhanced Raman scattering (SERS) sensors. We report here a novel single nanowire (NW) on graphene (SNOG) structure as an efficient, reproducible, and stable SERS-active platform. Au NWs having a well-defined single-crystal geometry on a monolayer graphene-coated metal film can form a well-defined, continuous nanogap structure that provides extremely reproducible and stable SERS signals. The in-NW reproducibility was verified by 2-dimensional Raman mapping, and the NW-to-NW reproducibility was verified by the cumulative curves of 32 SERS spectra. The simulation also indicated that a highly regular, line-shaped hot spot formed between the Au NW and graphene. Furthermore, SNOG platforms showed improved photostability and long

  17. Photoelectron imaging spectroscopy of niobium mononitride anion NbN-

    NASA Astrophysics Data System (ADS)

    Berkdemir, Cuneyt; Gunaratne, K. Don Dasitha; Cheng, Shi-Bo; Castleman, A. W.

    2016-07-01

    In this gas-phase photoelectron spectroscopy study, we present the electron binding energy spectrum and photoelectron angular distributions of NbN- by the velocity-map imaging technique. The electron binding energy of NbN- is measured to be 1.42 ± 0.02 eV from the X band maximum which defines the 0-0 transition between ground states of anion and neutral. Theoretical binding energies which are the vertical and adiabatic detachment energies are computed by density functional theory to compare them with experiment. The ground state of NbN- is assigned to the 2Δ3/2 state and then the electronic transitions originating from this state into X3ΔΩ (Ω = 1-3), a1Δ2, A3Σ1-, and b1Σ0+ states of NbN are reported to interpret the spectral features. As a prospective study for catalytic materials, spectral features of NbN- are compared with those of isovalent ZrO- and Pd-.

  18. Photoelectron imaging spectroscopy of niobium mononitride anion NbN(.).

    PubMed

    Berkdemir, Cuneyt; Gunaratne, K Don Dasitha; Cheng, Shi-Bo; Castleman, A W

    2016-07-21

    In this gas-phase photoelectron spectroscopy study, we present the electron binding energy spectrum and photoelectron angular distributions of NbN(-) by the velocity-map imaging technique. The electron binding energy of NbN(-) is measured to be 1.42 ± 0.02 eV from the X band maximum which defines the 0-0 transition between ground states of anion and neutral. Theoretical binding energies which are the vertical and adiabatic detachment energies are computed by density functional theory to compare them with experiment. The ground state of NbN(-) is assigned to the (2)Δ3/2 state and then the electronic transitions originating from this state into X(3)ΔΩ (Ω = 1-3), a(1)Δ2, A(3)Σ1 (-), and b(1)Σ0 (+) states of NbN are reported to interpret the spectral features. As a prospective study for catalytic materials, spectral features of NbN(-) are compared with those of isovalent ZrO(-) and Pd(-). PMID:27448881

  19. Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire.

    PubMed

    Li, Qiang; Wei, Hong; Xu, Hongxing

    2015-12-01

    The interactions between surface plasmons (SPs) in metal nanostructures and excitons in quantum emitters (QEs) lead to many interesting phenomena and potential applications that are strongly dependent on the quantum yield of SPs. The difficulty in distinguishing all the possible exciton recombination channels hinders the experimental determination of SP quantum yield. Here, we experimentally measured for the first time the quantum yield of single SPs generated by the exciton-plasmon coupling in a system composed of a single quantum dot and a silver nanowire (NW). By utilizing the SP guiding property of the NW, the decay rates of all the exciton recombination channels, i.e., direct free space radiation channel, SP generation channel, and nonradiative damping channel, are quantitatively obtained. It is determined that the optimum emitter-NW coupling distance for the largest SP quantum yield is about 10 nm, resulting from the different distance-dependent decay rates of the three channels. These results are important for manipulating the coupling between plasmonic nanostructures and QEs and developing on-chip quantum plasmonic devices for potential nanophotonic and quantum information applications. PMID:26583200

  20. Single nanowire on graphene (SNOG) as an efficient, reproducible, and stable SERS-active platform.

    PubMed

    Kim, Hongki; Seol, Myeong-Lok; Lee, Dong-Il; Lee, Jiyoung; Kang, Il-Suk; Lee, Hyoban; Kang, Taejoon; Choi, Yang-Kyu; Kim, Bongsoo

    2016-04-21

    Developing a well-defined nanostructure that can provide strong, reproducible, and stable SERS signals is quite important for the practical application of surface-enhanced Raman scattering (SERS) sensors. We report here a novel single nanowire (NW) on graphene (SNOG) structure as an efficient, reproducible, and stable SERS-active platform. Au NWs having a well-defined single-crystal geometry on a monolayer graphene-coated metal film can form a well-defined, continuous nanogap structure that provides extremely reproducible and stable SERS signals. The in-NW reproducibility was verified by 2-dimensional Raman mapping, and the NW-to-NW reproducibility was verified by the cumulative curves of 32 SERS spectra. The simulation also indicated that a highly regular, line-shaped hot spot formed between the Au NW and graphene. Furthermore, SNOG platforms showed improved photostability and long-term oxidation immunity. We anticipate that SNOG platforms will be appropriate for practical biological and chemical sensor applications that demand reproducible, stable, and strong signal production. PMID:27071328

  1. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

    SciTech Connect

    Gasparyan, F.; Zadorozhnyi, I.; Vitusevich, S.

    2015-05-07

    The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

  2. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    PubMed Central

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:25520597

  3. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Li, Hui; Zhu, Yan-Yan; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-12-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

  4. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  5. Clinical relevance of CHEK2 and NBN mutations in the macedonian population

    PubMed Central

    Kostovska, I Maleva; Jakimovska, M; Kubelka-Sabit, K; Karadjozov, M; Arsovski, A; Stojanovska, L; Plaseska-Karanfilska, D

    2015-01-01

    Clinical importance of the most common CHEK2 (IVS2+1 G>A, 1100delC, I157T and del5395) and NBN (R215W and 657del5) gene mutations for breast cancer development in Macedonian breast cancer patients is unknown. We performed a case-control study including 300 Macedonian breast cancer patients and 283 Macedonian healthy controls. Genotyping was done using a fast and highly accurate single-nucleotide primer extension method for the detection of five mutations in a single reaction. The detection of the del5395 was performed using an allele-specific duplex polymerase chain reaction (PCR) assay. We have found that mutations were more frequent in breast cancer patients (n = 13, 4.3%) than in controls (n = 5, 1.8%), although without statistical significance. Twelve patients were heterozygous for one of the analyzed mutations, while one patient had two mutations (NBN R215W and CHEK2 I157T). The most frequent variant was I157T, found in 10 patients and four controls (p = 0.176) and was found to be associated with familial breast cancer (p = 0.041). CHEK2 1100delC and NBN 657del5 were each found in one patient and not in the control group. CHEK2 IVS2+1G>A and del5395 were not found in our cohort. Frequencies of the studied mutations are low and they are not likely to represent alleles of clinical importance in the Macedonian population. PMID:26929905

  6. Clinical relevance of CHEK2 and NBN mutations in the macedonian population.

    PubMed

    Kostovska, I Maleva; Jakimovska, M; Kubelka-Sabit, K; Karadjozov, M; Arsovski, A; Stojanovska, L; Plaseska-Karanfilska, D

    2015-06-01

    Clinical importance of the most common CHEK2 (IVS2+1 G>A, 1100delC, I157T and del5395) and NBN (R215W and 657del5) gene mutations for breast cancer development in Macedonian breast cancer patients is unknown. We performed a case-control study including 300 Macedonian breast cancer patients and 283 Macedonian healthy controls. Genotyping was done using a fast and highly accurate single-nucleotide primer extension method for the detection of five mutations in a single reaction. The detection of the del5395 was performed using an allele-specific duplex polymerase chain reaction (PCR) assay. We have found that mutations were more frequent in breast cancer patients (n = 13, 4.3%) than in controls (n = 5, 1.8%), although without statistical significance. Twelve patients were heterozygous for one of the analyzed mutations, while one patient had two mutations (NBN R215W and CHEK2 I157T). The most frequent variant was I157T, found in 10 patients and four controls (p = 0.176) and was found to be associated with familial breast cancer (p = 0.041). CHEK2 1100delC and NBN 657del5 were each found in one patient and not in the control group. CHEK2 IVS2+1G>A and del5395 were not found in our cohort. Frequencies of the studied mutations are low and they are not likely to represent alleles of clinical importance in the Macedonian population. PMID:26929905

  7. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    NASA Astrophysics Data System (ADS)

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-06-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data.

  8. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory.

    PubMed

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~10(3)), low threshold voltage of switching (~3.5 V) and large cycling endurance (>10(3)). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  9. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    PubMed Central

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  10. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients.

    PubMed

    Huh, Junghwan; Kim, Dong-Chul; Munshi, A Mazid; Dheeraj, Dasa L; Jang, Doyoung; Kim, Gyu-Tae; Fimland, Bjørn-Ove; Weman, Helge

    2016-09-23

    Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention for a variety of optoelectronic device applications. However, electrical and optical properties of GaAsSb are strongly affected by Sb-related defects and scattering from surface states and/or defects, which can limit the performance of GaAsSb NW devices. Thus, in order to utilize the GaAsSb NWs for high performance electronic and optoelectronic devices, it is required to study the material and interface properties (e.g. the interface trap density) in the GaAsSb NW devices. Here, we investigate the low frequency noise in single GaAsSb NWs with self-induced compositional gradients. The current noise spectral density of the GaAsSb NW device showed a typical 1/f noise behavior. The Hooge's noise parameter and the interface trap density of the GaAsSb NW device were found to be ∼2.2 × 10(-2) and ∼2 × 10(12) eV(-1) cm(-2), respectively. By applying low frequency noise measurements, the noise equivalent power, a key figure of merit of photodetectors, was calculated. The observed low frequency noise properties can be useful as guidance for quality and reliability of GaAsSb NW based electronic devices, especially for photodetectors. PMID:27528601