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Sample records for nitride dielectric thin

  1. Infrared Dielectric Properties of Low-stress Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

    2012-01-01

    Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

  2. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    NASA Astrophysics Data System (ADS)

    Ji, Yanfeng; Pan, Chengbin; Zhang, Meiyun; Long, Shibing; Lian, Xiaojuan; Miao, Feng; Hui, Fei; Shi, Yuanyuan; Larcher, Luca; Wu, Ernest; Lanza, Mario

    2016-01-01

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO2, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  3. Scattering from Thin Dielectric Disks

    NASA Technical Reports Server (NTRS)

    Levine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1984-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectric properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T is sufficiently large the disk will always be in one or the other of these regimes (T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  4. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    PubMed

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  5. Thin dielectric technology and memory devices

    NASA Astrophysics Data System (ADS)

    King, Ya-Chin

    With advances in technology and scaling, silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) based VLSI circuits have remained dominant in data processing and memory applications. Perpetuated by the demand for high-performance and low-cost integrated circuits, the lateral dimensions of the MOSFETs are being aggressively scaled. This in turn demands scaling of the gate oxide thickness as well. Thin gate oxides present both challenges to the modeling and design device of the classical MOSFET and opportunities to explore new device designs and applications. This study investigates the effect of inversion layer quantization on the capacitance and current characteristics of thin-gate-oxide MOS transistors. In addition, this study explores the possibility of employing thin tunnel oxide for new quasi-nonvolatile memory devices. The performance limitation of a thin dielectric floating gate memory device as well as its potential for dynamic memory applications are discussed. An alternative device structure (i.e. charge-trap based memory cells) is examined by the single charge tunneling model governed by Coulomb Blockade theory. Two methods of forming charge storage nodes embedded in the gate dielectric are investigated. The resulting devices are then characterized. The first proposed device contains a charge trapping layer of silicon rich oxide (SRO) for dynamic/non-volatile memory application. This device has a similar structure as a MONOS device with SRO instead of silicon nitride for charge trapping on top of a very thin tunneling oxide (<2nm). Since it uses charge trapped in the oxide to create threshold voltage shift, the SRO memory cell is a non-destructive-read device. A new process of depositing SRO and high temperature oxide (HTO) in a single furnace step is developed to better top the control oxide thickness and improve data retention. This device achieved write and erase speeds comparable to that of a DRAM cell and longer data retention time than

  6. Polyimide thin-film dielectrics on ferroelectrics

    NASA Technical Reports Server (NTRS)

    Galiardi, R. V.

    1977-01-01

    Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.

  7. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets.

    PubMed

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D; Seo, Jung-Woo T; Chen, Kan-Sheng; Marks, Tobin J; Hersam, Mark C

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10(-9) A/cm(2) at 2 MV/cm and high capacitances of 245 nF/cm(2). The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm(2) V(-1) s(-1) at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics. PMID:26348822

  8. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  9. Anisotropic Dielectric Breakdown of Hexagonal Boron Nitride Film

    NASA Astrophysics Data System (ADS)

    Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

    Hexagonal boron nitride (h-BN) is considered as ideal substrate for 2D material devises. However, the reliability of insulating properties of h-BN itself has not been clarified yet. In this study, the anisotropic dielectric breakdown of h-BN is studied. We have found that the dielectric breakdown in c axis direction using a conductive atomic force microscope proceeded in the layer-by-layer manner. The obtained dielectric field strength was ~12 MV/cm, which is comparable to the conventional SiO2. On the other hand, to estimate the dielectric field strength in a direction perpendicular to c axis, voltage is applied to a relatively thick h-BN (10-60 nm) through Cr/Au electrodes fabricated on the h-BN. We realized that the absorbed water on h-BN significantly affect the IV characters and the breakdown voltage. After the adsorbed water was removed by the heating in vacuum, the dielectric field strength was determined to be ~3 MV/cm, which is the same order as that in c axis direction. This value could be increased when we consider the effect of electric field concentration around the metal electrode. Although the large difference in dielectric filed strength for two directions was initially expected due to the highly-anisotropic layered structure with the van der Waals bonding, it was not the case because the sp2 bonding should be broken for dielectric breakdown regardless of its direction. This research was supported by Grants-in-Aid for Scientific Research on Innovative Areas and for Research Activity Start-up by MEXT, Japan.

  10. Boron Nitride Surface Activity as Route to Composite Dielectric Films.

    PubMed

    Cui, Zhenhua; Cao, Zhen; Ma, Rui; Dobrynin, Andrey V; Adamson, Douglas H

    2015-08-12

    The propensity of boron nitride sheets to stack creates obstacles for their application as multifunctional materials despite their unique thermal, mechanical, and electrical properties. To address this challenge, we use a combination of molecular dynamics simulations and experimental techniques to demonstrate surfactant-like properties of BN sheets at the interface between immiscible solvents. The spreading of two-dimensional BN sheets at a high-energy oil/water interface lowers the free energy of the system, creating films of overlapping BN sheets that are more thermodynamically favorable than stacked sheets. Coating such films onto polymers results in composite materials with exceptional barrier and dielectric properties. PMID:26214048

  11. Titanium nitride thin films for minimizing multipactoring

    DOEpatents

    Welch, Kimo M.

    1979-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  12. Boron nitride hollow nanospheres: Synthesis, formation mechanism and dielectric property

    SciTech Connect

    Zhong, B.; Tang, X.H.; Huang, X.X.; Xia, L.; Zhang, X.D.; Wang, C.J.; Wen, G.W.

    2015-04-15

    Highlights: • BN hollow nanospheres are fabricated in large scale via a new CVD method. • Morphology and structure are elucidated by complementary analytical techniques. • Formation mechanism is proposed based on experimental observations. • Dielectric properties are investigated in the X-band microwave frequencies. • BN hollow nanospheres show lower dielectric loss than regular BN powders. - Abstract: Boron nitride (BN) hollow nanospheres have been successfully fabricated by pyrolyzing vapors decomposed from ammonia borane (NH{sub 3}BH{sub 3}) at 1300 °C. The final products have been extensively characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. The BN hollow nanospheres were ranging from 100 to 300 nm in diameter and around 30–100 nm in thickness. The internal structure of the products was found dependent on the reaction temperatures. A possible formation mechanism of the BN hollow nanospheres was proposed on the basis of the experimental observations. Dielectric measurements in the X-band microwave frequencies (8–12 GHz) showed that the dielectric loss of the paraffin filled by the BN hollow nanospheres was lower than that filled by regular BN powders, which indicated that the BN hollow nanospheres could be potentially used as low-density fillers for microwave radomes.

  13. Magnetoresistance measurements of superconducting molybdenum nitride thin films

    NASA Astrophysics Data System (ADS)

    Baskaran, R.; Arasu, A. V. Thanikai; Amaladass, E. P.

    2016-05-01

    Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc2(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

  14. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    NASA Astrophysics Data System (ADS)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  15. A microfabricated sensor for thin dielectric layers.

    PubMed

    Fierlinger, P; DeVoe, R; Flatt, B; Gratta, G; Green, M; Kolkowitz, S; Leport, F; Montero Diez, M; Neilson, R; O'Sullivan, K; Pocar, A; Wodin, J

    2008-04-01

    We describe a sensor for the measurement of thin dielectric layers capable of operation in a variety of environments. The sensor is obtained by microfabricating a capacitor with interleaved aluminum fingers, exposed to the dielectric to be measured. In particular, the device can measure thin layers of solid frozen from a liquid or gaseous medium. Sensitivity to single atomic layers is achievable in many configurations and, by utilizing fast, high sensitivity capacitance readout in a feedback system onto environmental parameters; coatings of few layers can be dynamically maintained. We discuss the design, readout, and calibration of several versions of the device optimized in different ways. We specifically dwell on the case in which atomically thin solid xenon layers are grown and stabilized, in cryogenic conditions, from a liquid xenon bath. PMID:18447546

  16. Thin film dielectric microstrip kinetic inductance detectors

    NASA Astrophysics Data System (ADS)

    Mazin, Benjamin A.; Sank, Daniel; McHugh, Sean; Lucero, Erik A.; Merrill, Andrew; Gao, Jiansong; Pappas, David; Moore, David; Zmuidzinas, Jonas

    2010-03-01

    Microwave kinetic inductance detectors, or MKIDs, are a type of low temperature detector that exhibit intrinsic frequency domain multiplexing at microwave frequencies. We present the first theory and measurements on a MKID based on a microstrip transmission line resonator. A complete characterization of the dielectric loss and noise properties of these resonators is performed, and agrees well with the derived theory. A competitive noise equivalent power of 5×10-17 W Hz-1/2 at 10 Hz has been demonstrated. The resonators exhibit the highest quality factors known in a microstrip resonator with a deposited thin film dielectric.

  17. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  18. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  19. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.

    PubMed

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  20. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    PubMed Central

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-01-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator. PMID:27325155

  1. Influence of Si/SiO 2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

    NASA Astrophysics Data System (ADS)

    Lee, Yi-Mu; Wu, Yider

    2008-05-01

    In this work, the influence of Si/SiO 2 interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO 2 interface evidenced by less negative Vt shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C- V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.

  2. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    SciTech Connect

    Tay, Roland Yingjie; Tsang, Siu Hon; Loeblein, Manuela; Chow, Wai Leong; Loh, Guan Chee; Toh, Joo Wah; Ang, Soon Loong; Teo, Edwin Hang Tong

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  3. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    NASA Astrophysics Data System (ADS)

    Tay, Roland Yingjie; Tsang, Siu Hon; Loeblein, Manuela; Chow, Wai Leong; Loh, Guan Chee; Toh, Joo Wah; Ang, Soon Loong; Teo, Edwin Hang Tong

    2015-03-01

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ˜25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ˜2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  4. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    PubMed

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses <100 nm were grown at 3 and 10 °C between 0.5 and 3 h, with mean grain sizes between ∼20 and 30 nm. The method is compatible with plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  5. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films.

    PubMed

    Zorn, Gilad; Migonney, Véronique; Castner, David G

    2014-09-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm(2). PMID:25280842

  6. Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

    PubMed Central

    Zorn, Gilad; Migonney, Véronique; Castner, David G.

    2014-01-01

    The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm2. PMID:25280842

  7. First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

    NASA Astrophysics Data System (ADS)

    Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

    2011-03-01

    Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

  8. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

    NASA Astrophysics Data System (ADS)

    Sowers, A. T.; Christman, J. A.; Bremser, M. D.; Ward, B. L.; Davis, R. F.; Nemanich, R. J.

    1997-10-01

    Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

  9. Dynamic Properties of Dielectric Susceptibility in Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Cui, Lian; Cui, Haiying; Wu, Chunmei; Yang, Guihua; He, Zelong; Wang, Yuling; Che, Jixin

    2016-02-01

    In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

  10. Dielectric properties of KDP filled porous alumina nanocomposite thin films.

    PubMed

    Boni, O; Berger, S

    2001-12-01

    A new concept of a composite dielectric thin film fabrication is presented. The fabrication process consists of two stages. The first stage is anodizing a thin aluminum film to produce a porous alumina film that contains an array of nanometer sized parallel pores. The second stage is filling the pores with a saturated KDP (KH2PO4) liquid solution due to capillary forces. After drying KDP nanocrystals are formed inside the pores. This process results in a formation of a composite dielectric thin film composed of the alumina pores walls as one dielectric material and the KDP nanocrystals inside the pores as another dielectric material. The dielectric permittivity of this composite film is higher than that of the porous alumina film at all applied frequencies. The dielectric enhancement is more pronounced at low frequencies due to an interface polarization mechanism. This fabrication process enables controlling the size, composition, and microstructure of the composite dielectric film constituents and thus changing its dielectric properties over a wide range of values. PMID:12914085

  11. Model for nitridation of nanoscale SiO{sub 2} thin films in pulsed inductively coupled N{sub 2} plasma

    SciTech Connect

    Rauf, Shahid; Lim, Sangwoo; Ventzek, Peter L.G.

    2005-07-15

    As nitration of SiO{sub 2} gate dielectric can increase the film's dielectric constant and reduce boron penetration into the Si channel during ion implantation, plasma nitridation is of considerable interest for the fabrication of semiconductor devices. A coupled plasma equipment-surface physics model is used in conjunction with an experimental analysis of nitrided SiO{sub 2} thin films to understand the mechanism of SiO{sub 2} plasma nitridation. This investigation is conducted in a pulsed inductively coupled N{sub 2} plasma. Computational results show that N atoms and N{sub 2}{sup +} ions are the primary species in the N{sub 2} plasma that contribute to the nitridation of SiO{sub 2} thin film. N atoms adsorb at the SiO{sub 2} surface and diffuse into the bulk film, and most nitrogen near the surface is due to these adsorbed N atoms. N{sub 2}{sup +} ions, on the other hand, penetrate deeper into the SiO{sub 2} film in an ion-implantation-like manner, and these ions are responsible for the observed tail in the nitrogen concentration profile. Nitrogen concentration in the film can be increased by enhancing the plasma source power or the nitridation time. However, once the dielectric surface starts saturating with nitrogen, further nitrogen adsorption is inhibited and nitridation rate tapers off. As the fluxes of atomic N and N{sub 2}{sup +} ions to the wafer decrease with increasing gas pressure, the nitridation rate decreases with gas pressure. For the range of SiO{sub 2} film thickness examined (13-15 A ), the nitrogen transport and reaction properties in the film are film thickness dependent, probably due to the nonuniform density of the initial SiO{sub 2} thin film or to interfacial stresses.

  12. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tari, Alireza; Lee, Czang-Ho; Wong, William S.

    2015-07-01

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  13. Interfacial properties of germanium nitride dielectric layers in germanium

    NASA Astrophysics Data System (ADS)

    Meiners, L. G.

    The first year's effort on this project has been primarily devoted to the design and construction of a low-pressure chemical vapor deposition system for growth of the germanium nitride layers. The gas manifold layout is shown schematically, as is the reactor assembly, and the vacuum pumping assembly. The generator-cavity system is capable of delivering 0-600 W of microwave power at 2.45 GHz. The power generating section has been constructed from components contained in a portable home microwave oven and the cavity was assembled from easily machinable pieces. The cw magnetron source was mounted directly on a cylindrical microwave cavity. The plasma was contained in an on-axis 20-mm o.d. quartz tube. Design tradeoffs and operating information are discussed.

  14. Investigation of temperature dependent dielectric constant of a sputtered TiN thin film by spectroscopic ellipsometry

    SciTech Connect

    Tripura Sundari, S. Ramaseshan, R.; Jose, Feby; Dash, S.; Tyagi, A. K.

    2014-01-21

    The temperature dependence of optical constants of titanium nitride thin film is investigated using Spectroscopic Ellipsometry (SE) between 1.4 and 5 eV in the temperature range of 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectric functions ε{sub 1}(E) and ε{sub 2}(E) marginally increase with increase in temperature. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the temperature behavior. With increase in temperature, the unscreened plasma frequency and broadening marginally decreased and increased, respectively. The parameters of the Lorentz oscillator model also showed that the relaxation time decreased with temperature while the oscillator energies increased. This study shows that owing to the marginal change in the refractive index with temperature, titanium nitride can be employed for surface plasmon sensor applications even in environments where rise in temperature is imminent.

  15. The electrical breakdown of thin dielectric elastomers: thermal effects

    NASA Astrophysics Data System (ADS)

    Zakaria, Shamsul; Morshuis, Peter H. F.; Benslimane, Mohamed Y.; Gernaey, Krist V.; Skov, Anne L.

    2014-03-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields. This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength. In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field. We performed numerical analysis with a quasi-steady state approximation to predict thermal runaway of dielectric elastomer films. We also studied experimentally the effect of temperature on dielectric properties of different PDMS dielectric elastomers. Different films with different percentages of silica and permittivity enhancing filler were selected for the measurements. From the modeling based on the fitting of experimental data, it is found that the electrothermal breakdown of the materials is strongly influenced by the increase in both dielectric permittivity and conductivity.

  16. Structure and Properties of Epitaxial Dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Wheeler, Virginia Danielle

    GaN is recognized as a possible material for metal oxide semiconductor field effect transistors (MOSFETs) used in high temperature, high power and high speed electronic applications. However, high gate leakage and low device breakdown voltages limit their use in these applications. The use of high-kappa dielectrics, which have both a high permittivity (ε) and high band gap energy (Eg), can reduce the leakage current density that adversely affects MOS devices. La2O3 and Sc2O 3 are rare earth oxides with a large Eg (6.18 eV and 6.3 eV respectively) and a relatively high ε (27 and 14.1 respectively), which make them good candidates for enhancing MOSFET performance. Epitaxial growth of oxides is a possible approach to reducing leakage current and Fermi level pinning related to a high density of interface states for dielectrics on compound semiconductors. In this work, La2O3 and Sc2O 3 were characterized structurally and electronically as potential epitaxial gate dielectrics for use in GaN based MOSFETs. GaN surface treatments were examined as a means for additional interface passivation and influencing subsequent oxide formation. Potassium persulfate (K2(SO4)2) and potassium hydroxide (KOH) were explored as a way to achieve improved passivation and desired surface termination for GaN films deposited on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS) showed that KOH left a nitrogen-rich interface, while K2(SO 4)2 left a gallium-rich interface, which provides a way to control surface oxide formation. K2(SO4)2 exhibited a shift in the O1s peak indicating the formation of a gallium-rich GaOx at the surface with decreased carbon contaminants. GaO x acts as a passivating layer prior to dielectric deposition, which resulted in an order of magnitude reduction in leakage current, a reduced hysteresis window, and an overall improvement in device performance. Furthermore, K2(SO4)2 resulted in an additional 0.4 eV of

  17. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Rheinländer, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; Woollam, J. A.; Hahn, J.; Richter, F.

    1997-11-01

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material.

  18. Stress relaxation in Si-rich silicon nitride thin films

    SciTech Connect

    Habermehl, S.

    1998-05-01

    Si-rich silicon nitride thin films have been deposited by low pressure chemical vapor deposition, at 850{degree}C from mixtures of dichlorosilane and ammonia. The films{close_quote} elastic properties have been studied as a function of film composition. Fourier transform infrared spectroscopy and ellipsometric data indicate that the local atomic strain is a strong function of the calculated volume fraction of Si contained in the films. A relationship is observed that shows the strain to be inversely proportional to the cube root of the Si volume fraction. A model that accounts for distortion in Si{endash}Si{sub x}N{sub 4{minus}x} tetrahedra (x=0{endash}4), upon substitution of silicon for nitrogen in the film is applied to the data. The model is shown to be consistent with measurements of intrinsic film stress across a compositional range from stoichiometric silicon nitride, Si{sub 3}N{sub 4}, to nitrogen-free amorphous silicon, a-Si. {copyright} {ital 1998 American Institute of Physics.}

  19. Dielectric properties of inorganic fillers filled epoxy thin film

    SciTech Connect

    Norshamira, A. Mariatti, M.

    2015-07-22

    The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

  20. Tunable surface plasmon resonances in sputtered titanium nitride thin films

    NASA Astrophysics Data System (ADS)

    Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

    2016-05-01

    Thin films of titanium nitride were deposited on alpha-brass and gold electroplated brass (GCB) substrates by DC reactive magnetron sputtering at different N2 partial pressures (10%, 50% and 100 %). The measured specular reflectance spectra of the films indicate the existence of surface plasmon resonance peaks whose positions are dependent on the substrate and nitrogen pressure during deposition. In the case of films on brass, the SPR (surface plasmon resonance) is centered around 600, 550 and 510 nm at 10,50 and 100% Nitrogen. In contrast, the SPR occurs at 510 nm for the films deposited at 10% and 50% nitrogen which red shifts to 570 nm for the film deposited in 100% nitrogen. The observed behavior is correlated with morphology, microstructure and structure of the films.

  1. Mechanical properties of sputtered silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Vila, M.; Cáceres, D.; Prieto, C.

    2003-12-01

    Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young's modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8-23 and 100-210 GPa, respectively. Additionally, Fourier-transform infrared spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction were used to characterize samples with respect to different types of bonding, atomic concentrations, and structure of the films to explain the variation of mechanical properties. The hardness and Young's modulus were determined as a function of film composition and structure and conditions giving the hardest film were found. Additionally, a model that assumes a series coupling of the elastic components, corresponding to the Si-O and Si-N bonds present in the sample has been proposed to explain the observed variations of hardness and Young's modulus.

  2. Characterization of tantalum nitride thin films synthesized by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zaman, Anna

    Tantalum Nitride is chemically inert, oxidation resistant and hard. TaN finds its application as a protective coating on steel due to their excellent wear properties. It has become a very promising diffusion barrier material in Cu interconnect technology in microelectronics. TaN has not been analyzed as much as other transition metal nitrides like the TiN system because TaN exhibits various stable and metastable phases. The emergence of these phases and the different physical, chemical and mechanical properties depend on the growth technique and deposition conditions. TaN thin films were deposited using the magnetron PVD system in the SaNEL lab. The aim of this study was to identify the effect of processing parameters like N2/Ar ratio, substrate bias and temperature, on the emergence of the different phases present in TaN thin films and the effect of deposition conditions on the mechanical properties of these films. The phases present in the films, deposited at varying conditions were explored via low angle X-Ray Diffraction (XRD), hardness of the films was measured by Nanoindentation and tribological tests were carried out to measure the frictional and wear behavior. It was observed that at high percentage of Nitrogen (10%-25%) the main phase present was FCC TaN and as the nitrogen content was decreased a mixture of phases was present in these films. The hardness of the films increases as we decrease the Nitrogen content, yielding a film with a hardness of 37.1 GPa at 3% N2 with a substrate bias voltage of -100 V.

  3. Spectroscopic studies of refractory and dielectric thin films

    SciTech Connect

    Truong, C.M.

    1993-01-01

    This work demonstrated the application of the techniques and methodology of surface science to investigate the mechanisms of thin film deposition processes on solid surfaces. The synthesis of boron nitride (BN) thin films was studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). In this model system, diborane (B[sub 2]H[sub 6]), ammonia (NH[sub 3]) and hydrazine (N[sub 2]H[sub 4]) were used as precursors to deposit BN thin films on a clean Ru(0001) surface. The result showed that ammonia reaction with diborane yielded only boron-rich boron nitride overlayers. However, stoichiometric BN films in excess of one monolayer could be produced when hydrazine was substituted for ammonia. The effects of oxygen on boron-rich and stoichiometric boron-nitrogen films were also examined. In the second part of this work, high resolution electron energy loss spectroscopy (HREELS) was used to characterize defect centers in MgO and in lithium-doped MgO thin films. The HREELS results showed that MgO thin films grown on Mo(100) were nearly defect-free at temperatures up to 1100 K. HREELS measurements indicated that annealings to higher temperatures induced F-type defect centers in the MgO films. The formation of [Li[sup +]O[sup [minus

  4. Spotting 2D atomic layers on aluminum nitride thin films.

    PubMed

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers. PMID:26422387

  5. Spotting 2D atomic layers on aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  6. Method of manufacture of atomically thin boron nitride

    DOEpatents

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  7. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    PubMed

    Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C; Liao, Lei

    2016-03-01

    A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance. PMID:26762171

  8. Residual ferroelectricity in barium strontium titanate thin film tunable dielectrics

    SciTech Connect

    Garten, L. M. Trolier-McKinstry, S.; Lam, P.; Harris, D.; Maria, J.-P.

    2014-07-28

    Loss reduction is critical to develop Ba{sub 1−x}Sr{sub x}TiO{sub 3} thin film tunable microwave dielectric components and dielectric energy storage devices. The presence of ferroelectricity, and hence the domain wall contributions to dielectric loss, will degrade the tunable performance in the microwave region. In this work, residual ferroelectricity—a persistent ferroelectric response above the global phase transition temperature—was characterized in tunable dielectrics using Rayleigh analysis. Chemical solution deposited Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} films, with relative tunabilities of 86% over 250 kV/cm at 100 kHz, demonstrated residual ferroelectricity 65 °C above the ostensible paraelectric transition temperature. Frequency dispersion observed in the dielectric temperature response was consistent with the presence of nanopolar regions as one source of residual ferroelectricity. The application of AC electric field for the Rayleigh analysis of these samples led to a doubling of the dielectric loss for fields over 10 kV/cm at room temperature.

  9. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    NASA Astrophysics Data System (ADS)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  10. Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

    SciTech Connect

    Nguyen, P. D.; Sunding, M. F.; Vestland, L. O.; Finstad, T. G.; Olsen, A.; Kepaptsoglou, D. M.; Ramasse, Q. M.

    2012-10-01

    The atomic structure and optical properties of Si-rich silicon nitride thin films have been for decades the subject of intense research, both theoretically and experimentally. It has been established in particular that modifying the chemical composition of this material (e.g., the Si excess concentration) can lead to dramatic differences in its physical, optical, and electrical properties. The present paper reports on how the incorporation of oxygen into silicon nitride networks influences their chemical bonding and photoluminescence properties. Here, by using a combination of analytical scanning transmission electron microscopy and x-ray photoelectron spectroscopy it is demonstrated that the structure of Si-rich silicon nitride with low O content can be described by the co-existence of Si nanocrystals in a Si{sub 3}N{sub 4} matrix, with occasional localized nano-regions of a Si{sub 2}ON{sub 2} phase, depending on the amount of excess Si. Furthermore, it is shown that the structure of silicon nitride with high O content can be adequately described by a so-called random bonding model, according to which the material consists in bonded networks of randomly distributed tetrahedral SiO{sub x}N{sub 4-x} (where x = 0, 1, 2, 3, and 4). Photoluminescence measurements indicate that the effect of O is to introduce a gap state in the band gap of Si{sub 3}N{sub 4} matrix. When a large amount of O is introduced, on the other hand, the photoluminescence measurements are in agreement with a shifted conduction band minimum in the dielectric. For both cases (high and low O content), Si dangling bonds were found to give rise to the deep level in the band gap of the nitride matrix, causing the dominant emission band in the photoluminescence of the films.

  11. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.

    PubMed

    Kim, Ki Kang; Hsu, Allen; Jia, Xiaoting; Kim, Soo Min; Shi, Yumeng; Dresselhaus, Mildred; Palacios, Tomas; Kong, Jing

    2012-10-23

    Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is close to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 μm(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer in top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V·s) range) remains the same before and after device integration. PMID:22970651

  12. Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics

    NASA Astrophysics Data System (ADS)

    Lefebvre, J.; Ding, J.; Li, Z.; Cheng, F.; Du, N.; Malenfant, P. R. L.

    2015-12-01

    We present two examples of carbon nanotube network thin film transistors with strongly hydrophobic dielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels.

  13. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    NASA Astrophysics Data System (ADS)

    Caicedo, J. C.; Zambrano, G.; Aperador, W.; Escobar-Alarcon, L.; Camps, E.

    2011-10-01

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N 2 gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 °C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  14. The effect of dielectric properties of sintering additives on microwave sintered silicon nitride ceramics.

    PubMed

    Chockalingam, Sreekumar; George, Jacob; Earl, David; Amarakoon, Vasantha R W

    2008-01-01

    Silicon nitride requires the use of susceptive additives for microwave liquid phase sintering due to the material's low dielectric loss. In this article, we report the effect of complex dielectric properties of two compositions of sintering aids on 2.45 GHz microwave sintered Si3N4 with respect to power absorption, temperature distribution and densification behavior. The temperature dependent dielectric properties were measured from 25 degrees C to 1400 degrees C using a conventional cavity perturbation technique. Finite Difference Time Domain (FDTD) electromagnetic simulations coupled with a thermal solver was used to predict the microwave power absorption and the corresponding temperature evolution inside the samples. The additive with higher dielectric loss (4 wt% MgO, 6 wt% Y2O3 and 2.5 wt% ZrO2) produces a greater sintered density than the lower loss additive (4 wt% MgO and 6 wt% Y2O3) or pure Si3N4. Although microwave loss at temperatures below 600 degrees C is insignificant with or without the additives, the loss begins to increase at higher temperatures when the additives are present and has a strong upward trend above 1000 degrees C. Above 1200 degrees C the sample containing ZrO2 exhibited the greatest loss. Numerical simulations at the peak sintering temperature show greater microwave power absorption and higher temperature in the sample with the highest loss additive. The simulation results correlate to the difference in densification behavior observed. The simulation was also useful because the material temperature was not accurately provided by optical pyrometer measurements of the crucible sample holder. PMID:19227072

  15. Dielectric response of carbon and boron nitride nanotubes from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Kozinsky, Boris; Marzari, Nicola

    2007-03-01

    We present a complete characterization of the dielectric response of isolated single- and multi-wall carbon (CNT) and boron-nitride nanotubes (BNNT) using first-principles calculations and density-functional theory. The longitudinal polarizability of a nanotube is sensitive to the band gap and its radius, and in multi-wall nanotubes and bundles it is trivially given by the sum of the polarizabilities of the constituent tubes. The transverse polarizability of both types of nanotubes is insensitive to band gap and chirality and depends only on the radius. However, the transverse response and screening properties of BNNTs are qualitatively different from those of metallic and semiconducting CNTs. The fundamental differences in electronic properties of the two materials are inherited from the corresponding two-dimensional sheets - graphene and boron-nitride. The screening of the external field in CNTs is stronger than in BNNTs and has a different radius dependence. The transverse response in BNNTs is found to be that of an insulator, while in CNTs it is intermediate between metallic and semiconducting. Our results have practical implications for selective growth of different types of nanotubes using aligning electric fields and for Raman characterization of nanotubes.

  16. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    PubMed Central

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  17. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics.

    PubMed

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-12-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm(-2). Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m(-1) K(-1). The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications. PMID:26510890

  18. Combinatorial synthesis of thin film libraries for microwave dielectrics

    NASA Astrophysics Data System (ADS)

    Wessler, B.; Jéhanno, V.; Rossner, W.; Maier, W. F.

    2004-02-01

    The short innovation cycles in communication technology require the development and optimization of high-performance dielectrics for passive integration, utilized, e.g., in band pass filters, antennas, or dielectric resonators. Applying combinatorial methods offers the advantage to accelerate the discovery of more efficient microwave dielectrics and to investigate the effects of a variety of dopants on the dielectric properties. In the present study, libraries consisting of chemically diverse thin films are produced by chemical solution deposition. A sol-gel precursor set was developed consisting of precursor solutions for different elements, such as Ba, Ti, W, and Sr, which convert to the corresponding oxides by annealing. These precursor solutions are mixed in various ratios by pipetting robots and are then deposited on structured substrates followed by calcination and sintering. The influence of different parameters on the film quality such as the type of precursor used, their miscibility with each other, the thermal processing, and the technique used to pre-structure the wafer is discussed.

  19. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    NASA Astrophysics Data System (ADS)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V‑1 sec‑1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  20. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

    PubMed

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  1. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    PubMed Central

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  2. Temperature effect on low-k dielectric thin films studied by ERDA

    SciTech Connect

    Jensen, Jens; Possnert, Göran; Zhang, Yanwen

    2008-09-23

    Low-k dielectric materials are becoming increasingly interesting as alternative to SiO2 with device geometries shrinking beyond the 65 nm technology node. At elevated temperatures hydrogen migration becomes an important degradation mechanism for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during the fabrication process is, therefore, of great interest in the understanding of device reliability. In this study, various low-k dielectric films were subjected to thermal annealing at temperatures that are generally used for device fabrication. Elastic recoil detection analysis (ERDA) was used to investigate compositional changes and hydrogen redistribution in thin films of plasma-enhanced tetraethylortho-silicate (PETEOS), phosphorus doped silicon glass (PSG), silicon nitride (SiN) and silicon oxynitride (SiON). Except for an initial hydrogen release from the surface region in films of PETEOS and PSG, the results indicate that the elemental composition of the films was stable for at least 2 hours at 450°C.

  3. Growth of atomically thin hexagonal boron nitride films by diffusion through a metal film and precipitation

    NASA Astrophysics Data System (ADS)

    Suzuki, Satoru; Molto Pallares, Roger; Hibino, Hiroki

    2012-09-01

    Atomically thin hexagonal boron nitride films were grown on both the top and bottom surfaces of a polycrystalline Co or Ni film by annealing a Co (Ni)/amorphous boron nitride/SiO2 structure in vacuum. This method of growing hexagonal boron nitride is much simpler than other methods, such as thermal chemical vapour deposition. B and N atoms diffuse through the metal film, although N is almost completely insoluble in both Co and Ni, and precipitation occurs at the topmost surface. The mass transport is considered to be caused by grain boundary diffusion.

  4. Boosting the Transparency of Thin Layers by Coatings of Opposing Susceptibility: How Metals Help See Through Dielectrics.

    PubMed

    Al Shakhs, Mohammed; Augusto, Lucian; Markley, Loïc; Chau, Kenneth J

    2016-01-01

    We propose a hypothesis that a very thin layer can be made more transparent by adding a thin coating with susceptibility of opposing sign. Two experimental tests backed by a theoretical model support this hypothesis. First, we show that the visible and near-infrared transmission through a semi-transparent silver film can be enhanced by up to ~70% and spectrally tailored depending on the type and thickness of the dielectric coating. Material types explored as dielectric coating layers include conventional metal oxides (titanium dioxide) and lesser-explored elemental semiconductors (undoped silicon, p-type silicon, and germanium). Second, and more surprisingly, we show that coating a 50-nm-thick silicon nitride membrane with a 10-nm-thick silver layer can modestly enhance the transmission by up to 6 ± 1% in the blue part of the spectrum. Transmission enhancements are observed for three silver-coated membranes in different configurations. Thinner silver coatings are theoretically capable of enhancement factors greater than 10%, but implementation is restricted by challenges in making smooth and continuous silver films below 10 nm in thickness. This study is important because it is the first demonstration of reciprocity with respect to the transmission enhancements achieved by combining thin metallic and dielectric layers. PMID:26860979

  5. Boosting the Transparency of Thin Layers by Coatings of Opposing Susceptibility: How Metals Help See Through Dielectrics

    PubMed Central

    Shakhs, Mohammed Al; Augusto, Lucian; Markley, Loïc; Chau, Kenneth J.

    2016-01-01

    We propose a hypothesis that a very thin layer can be made more transparent by adding a thin coating with susceptibility of opposing sign. Two experimental tests backed by a theoretical model support this hypothesis. First, we show that the visible and near-infrared transmission through a semi-transparent silver film can be enhanced by up to ~70% and spectrally tailored depending on the type and thickness of the dielectric coating. Material types explored as dielectric coating layers include conventional metal oxides (titanium dioxide) and lesser-explored elemental semiconductors (undoped silicon, p-type silicon, and germanium). Second, and more surprisingly, we show that coating a 50-nm-thick silicon nitride membrane with a 10-nm-thick silver layer can modestly enhance the transmission by up to 6 ± 1% in the blue part of the spectrum. Transmission enhancements are observed for three silver-coated membranes in different configurations. Thinner silver coatings are theoretically capable of enhancement factors greater than 10%, but implementation is restricted by challenges in making smooth and continuous silver films below 10 nm in thickness. This study is important because it is the first demonstration of reciprocity with respect to the transmission enhancements achieved by combining thin metallic and dielectric layers. PMID:26860979

  6. Boosting the Transparency of Thin Layers by Coatings of Opposing Susceptibility: How Metals Help See Through Dielectrics

    NASA Astrophysics Data System (ADS)

    Shakhs, Mohammed Al; Augusto, Lucian; Markley, Loïc; Chau, Kenneth J.

    2016-02-01

    We propose a hypothesis that a very thin layer can be made more transparent by adding a thin coating with susceptibility of opposing sign. Two experimental tests backed by a theoretical model support this hypothesis. First, we show that the visible and near-infrared transmission through a semi-transparent silver film can be enhanced by up to ~70% and spectrally tailored depending on the type and thickness of the dielectric coating. Material types explored as dielectric coating layers include conventional metal oxides (titanium dioxide) and lesser-explored elemental semiconductors (undoped silicon, p-type silicon, and germanium). Second, and more surprisingly, we show that coating a 50-nm-thick silicon nitride membrane with a 10-nm-thick silver layer can modestly enhance the transmission by up to 6 ± 1% in the blue part of the spectrum. Transmission enhancements are observed for three silver-coated membranes in different configurations. Thinner silver coatings are theoretically capable of enhancement factors greater than 10%, but implementation is restricted by challenges in making smooth and continuous silver films below 10 nm in thickness. This study is important because it is the first demonstration of reciprocity with respect to the transmission enhancements achieved by combining thin metallic and dielectric layers.

  7. Secret of formulating a selective etching or cleaning solution for boron nitride (BN) thin film

    NASA Astrophysics Data System (ADS)

    Hui, Wing C.

    2004-04-01

    Boron nitride thin film has a very unique characteristic of extremely high chemical inertness. Thus, it is a better hard mask than silicon nitride for aggressive etching solutions, such as the isotropic HF/HNO3/CH3COOH (or HNA) etchant for silicon. However, because of its high chemical inertness, it is also difficult to remove it. Plasma etching with Freon gases can etch the boron nitride film, but it is unselective to silicon, silicon dioxide or silicon nitride. Cleaning up the boron nitride film with plasma etching will usually leave a damaged or foggy surface. A special wet chemical solution has been developed for etching or cleaning boron nitride film selectively. It can etch boron nitride, but not the coatings or substrates of silicon, silicon nitride and silicon dioxide. It is a very strong oxidizing agent consisting of concentrated sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), but different from the common Piranha Etch. It may be even more interesting to understand the logic or secret behind of how to formulate a new selective etching solution. Various chemical and chemical engineering aspects were considered carefully in our development process. These included creating the right electrochemical potential for the etchant, ensuring large differences in chemical kinetics to make the reactions selective, providing proper mass transfer for removing the by products, etc.

  8. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    NASA Astrophysics Data System (ADS)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  9. Dielectric breakdown in nano-porous thin films

    NASA Astrophysics Data System (ADS)

    Borja, Juan Pablo

    Unknown to most computer users and mobile device enthusiasts, we have finally entered into a critical age of chip manufacturing. January of 2014 marks the official start of the quest by the semiconductor industry to successfully integrate sub 14nm process technology nodes in accordance to the International Technology Roadmap for Semiconductors (ITRS). The manufacturing of nano-scale features represents a major bottleneck of its own. However, a bigger challenge lies in reliably isolating the massive chip interconnect network. The present work is aimed at generating a theoretical and experimental framework to predict dielectric breakdown for thin films used in computer chip components. Here, a set of experimental techniques are presented to assess and study dielectric failure in novel thin films. A theory of dielectric breakdown in thin nano-porous films is proposed to describe combined intrinsic and metal ion catalyzed failure. This theory draws on experimental evidence as well as fundamental concepts from mass and electronic charge transport. The drift of metal species was found to accelerate intrinsic dielectric failure. The solubility of metals species such as Cu was found to range from 7.0x1025 ions/m3 to 1.86x1026 ions/m3 in 7% porous SiCOH films. The diffusion coefficient for Cu species was found to span from 4.2x10-19 m2/s to 1.86x10-21 m2/s. Ramped voltage stress experiments were used to identify intrinsic failure from metal catalyzed failure. Intrinsic breakdown is defined when time to failure against applied field ramp rate results in ∂(ln(TTF))/∂(ln(R)) ≈ -1. Intrinsic failure was studied using Au. Here, ∂(ln(TTF))/∂(ln(R)) ≈ -0.95, which is an experimental best case scenario for intrinsic failure. Au is commonly reluctant to ionize which means that failure occurs in the absence of ionic species. Metal catalyzed failure was investigated using reactive electrodes such as Cu, and Ag. Here, trends for ∂(ln(TTF))/∂(ln(R)) significantly

  10. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  11. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  12. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  13. Improving dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films on silicon by nitrogen doping

    SciTech Connect

    Roy Chaudhuri, Ayan; Osten, H. J.; Fissel, A.; Archakam, V. R.

    2013-01-14

    We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd{sub 2}O{sub 3}:N layers indicate that nitrogen incorporation in Gd{sub 2}O{sub 3} effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

  14. Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating

    NASA Astrophysics Data System (ADS)

    Zhou, Wei-Lie; Ikuhara, Yuichi; Suzuki, Tetsuya

    1995-12-01

    Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (˜4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite.

  15. Dielectric Function and Electronic Excitations of Functionalized DNA Thin Films

    NASA Astrophysics Data System (ADS)

    Lee, Hosuk; Lee, Hosun; Lee, Jung Eun; Rha Lee, U.; Choi, Dong Hoon

    2010-06-01

    We measure the dielectric functions of organic-soluble, functionalized DNAs bearing functional moieties in the near-infrared, visible, and ultra-violet spectra by using spectroscopic ellipsometry. Natural double-stranded DNA is dissolved in water and reacted with carbazole-based trimethyl ammonium bromide, cetyltrimethylammonium bromide, and chalcone-terminated trimethyl ammonium bromide. The functional DNA products are all precipitated and filtered for washing and drying. We successfully prepare functionalized DNAs that are insoluble in water but soluble in organic solvents. The thin films are fabricated by using the spin coating technique after preparing solutions in either homogeneous or mixed organic solvents. We measure the ultraviolet-visible absorbance spectra of the films. The absorbance spectra show that the optical energy gaps of the functionalized DNAs change little even though the DNAs are connected to the complex molecules by electrostatic interaction. From the measured ellipsometric angles, we estimate the dielectric functions by using parametric optical constant model and layer model analysis. Depending on the nature of the attached complex molecules, the dielectric functions change, new optical structures develop below and above band gaps arising from the side molecules, and the optical energy gaps of the DNAs are altered slightly by weak coupling to the tethered complex molecules.

  16. Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

    SciTech Connect

    King, Sean W. Brockman, Justin; Bielefeld, Jeff; French, Marc; Kuhn, Markus; Paquette, Michelle M.; Otto, Joseph W.; Caruso, A. N.; French, Benjamin

    2014-03-10

    To facilitate the design of heterostructure devices employing hexagonal/sp{sup 2} boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and CBOs) present at interfaces formed between amorphous hydrogenated sp{sup 2} boron nitride (a-BN:H) and various low- and high-dielectric-constant (k) amorphous hydrogenated silicon network dielectric materials (a-SiX:H, X = O, N, C). For a-BN:H interfaces formed with wide-band-gap a-SiO{sub 2} and low-k a-SiOC:H materials (E{sub g} ≅ 8.2−8.8 eV), a type I band alignment was observed where the a-BN:H band gap (E{sub g} = 5.5 ± 0.2 eV) was bracketed by a relatively large VBO and CBO of ∼1.9 and 1.2 eV, respectively. Similarly, a type I alignment was observed between a-BN:H and high-k a-SiC:H where the a-SiC:H band gap (E{sub g} = 2.6 ± 0.2 eV) was bracketed by a-BN:H with VBO and CBO of 1.0 ± 0.1 and 1.9 ± 0.2 eV, respectively. The addition of O or N to a-SiC:H was observed to decrease the VBO and increase the CBO with a-BN:H. For high-k a-SiN:H (E{sub g} = 3.3 ± 0.2 eV) interfaces with a-BN:H, a slightly staggered type II band alignment was observed with VBO and CBO of 0.1 ± 0.1 and −2.3 ± 0.2 eV, respectively. The measured a-BN:H VBOs were found to be consistent with those deduced via application of the commutative and transitive rules to VBOs reported for a-BN:H, a-SiC:H, a-SiN:H, and a-SiO{sub 2} interfaces with Si (100)

  17. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  18. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    SciTech Connect

    Tari, Alireza Lee, Czang-Ho; Wong, William S.

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  19. Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry Pérot optical filters

    NASA Astrophysics Data System (ADS)

    Huang, H.; Winchester, K.; Liu, Y.; Hu, X. Z.; Musca, C. A.; Dell, J. M.; Faraone, L.

    2005-03-01

    This paper reports an investigation on techniques for determining elastic modulus and intrinsic stress gradient in plasma-enhanced chemical vapor deposition (PECVD) silicon nitride thin films. The elastic property of the silicon nitride thin films was determined using the nanoindentation method on silicon nitride/silicon bilayer systems. A simple empirical formula was developed to deconvolute the film elastic modulus. The intrinsic stress gradient in the films was determined by using micrometric cantilever beams, cross-membrane structures and mechanical simulation. The deflections of the silicon nitride thin film cantilever beams and cross-membranes caused by in-thickness stress gradients were measured using optical interference microscopy. Finite-element beam models were built to compute the deflection induced by the stress gradient. Matching the deflection computed under a given gradient with that measured experimentally on fabricated samples allows the stress gradient of the PECVD silicon nitride thin films introduced from the fabrication process to be evaluated.

  20. High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

    PubMed Central

    Liu, Jun; Yuan, Yukun; Ren, Zhong; Tan, Qiulin; Xiong, Jijun

    2015-01-01

    The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range. PMID:26370999

  1. Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride.

    PubMed

    Huang, Chen-Yang; Ku, Hao-Min; Liao, Wei-Tsai; Chao, Chu-Li; Tsay, Jenq-Dar; Chao, Shiuh

    2009-03-30

    Ta2O5 / SiO2 dielectric multi-layer micro-mirror array (MMA) with 3mm mirror size and 6mm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200 degrees C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200 degrees C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2:56 mm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light. PMID:19333330

  2. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect

    Luo, Hongmei; Feldmann, David M; Wang, Haiyan; Bi, Zhenxing

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  3. Silicon nitride coated silicon thin film on three dimensions current collector for lithium ion battery anode

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yu; Chang, Chun-Chi; Duh, Jenq-Gong

    2016-09-01

    Silicon nitride coated silicon (N-Si) has been synthesized by two-step DC sputtering on Cu Micro-cone arrays (CMAs) at ambient temperature. The electrochemical properties of N-Si anodes with various thickness of nitride layer are investigated. From the potential window of 1.2 V-0.05 V, high rate charge-discharge and long cycle test have been executed to investigate the electrochemical performances of various N-Si coated Si-based lithium ion batteries anode materials. Higher specific capacity can be obtained after 200 cycles. The cycling stability is enhanced via thinner nitride layer coating as silicon nitride films are converted to Li3N with covered Si thin films. These N-Si anodes can be cycled under high rates up to 10 C due to low charge transfer resistance resulted from silicon nitride films. This indicates that the combination of silicon nitride and silicon can effectively endure high current and thus enhance the cycling stability. It is expected that N-Si is a potential candidate for batteries that can work effectively under high power.

  4. Dielectric relaxation of thin films of polyamide random copolymers.

    PubMed

    Taniguchi, Natsumi; Fukao, Koji; Sotta, Paul; Long, Didier R

    2015-05-01

    We investigate the relaxation behavior of thin films of a polyamide random copolymer, PA66/6I, with various film thicknesses using dielectric relaxation spectroscopy. Two dielectric signals are observed at high temperatures, the α process and the relaxation process due to electrode polarization (the EP process). The relaxation time of the EP process has a Vogel-Fulcher-Tammann type of temperature dependence, and the glass transition temperature, T(g), evaluated from the EP process agrees very well with the T(g) determined from the thermal measurements. The fragility index derived from the EP process increases with decreasing film thickness. The relaxation time and the dielectric relaxation strength of the EP process are described by a linear function of the film thickness d for large values of d, which can be regarded as experimental evidence for the validity of attributing the observed signal to the EP process. Furthermore, there is distinct deviation from this linear law for thicknesses smaller than a critical value. This deviation observed in thinner films is associated with an increase in the mobility and/or diffusion constant of the charge carriers responsible for the EP process. The α process is located in a higher-frequency region than the EP process at high temperatures but merges with the EP process at lower temperatures near the glass transition region. The thickness dependence of the relaxation time of the α process is different from that of the EP process. This suggests that there is decoupling between the segmental motion of the polymers and the translational motion of the charge carriers in confinement. PMID:26066192

  5. Dielectric relaxation of thin films of polyamide random copolymers

    NASA Astrophysics Data System (ADS)

    Taniguchi, Natsumi; Fukao, Koji; Sotta, Paul; Long, Didier R.

    2015-05-01

    We investigate the relaxation behavior of thin films of a polyamide random copolymer, PA66/6I, with various film thicknesses using dielectric relaxation spectroscopy. Two dielectric signals are observed at high temperatures, the α process and the relaxation process due to electrode polarization (the EP process). The relaxation time of the EP process has a Vogel-Fulcher-Tammann type of temperature dependence, and the glass transition temperature, Tg, evaluated from the EP process agrees very well with the Tg determined from the thermal measurements. The fragility index derived from the EP process increases with decreasing film thickness. The relaxation time and the dielectric relaxation strength of the EP process are described by a linear function of the film thickness d for large values of d , which can be regarded as experimental evidence for the validity of attributing the observed signal to the EP process. Furthermore, there is distinct deviation from this linear law for thicknesses smaller than a critical value. This deviation observed in thinner films is associated with an increase in the mobility and/or diffusion constant of the charge carriers responsible for the EP process. The α process is located in a higher-frequency region than the EP process at high temperatures but merges with the EP process at lower temperatures near the glass transition region. The thickness dependence of the relaxation time of the α process is different from that of the EP process. This suggests that there is decoupling between the segmental motion of the polymers and the translational motion of the charge carriers in confinement.

  6. Nanoscale electrochemistry using dielectric thin films as solid electrolytes.

    PubMed

    Valov, Ilia; Lu, Wei D

    2016-08-01

    It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications. PMID:27150952

  7. Dielectric relaxation and defect analysis of Ta2O5 thin films

    NASA Astrophysics Data System (ADS)

    Ezhilvalavan, S.; Shiahn Tsai, Ming; Yuen Tseng, Tseung; Shiahn Tsai, Ming

    2000-05-01

    The presence of defects in thin-film dielectrics often leads to dielectric relaxation as a function of frequency, in which the dielectric constant decreases and the loss tangent increases with increasing frequency. Dielectric relaxation results in charge storage capacity reduction under dynamic random access memory operating conditions. In this work, the dielectric relaxation behaviour of dc reactive sputtered Ta2O5 thin film was investigated. Using dielectric dispersion measurements as a function of frequency (100 Hz≤f≤10 MHz) and temperature (27 °C≤T≤150 °C), we determined the dielectric relaxation and defect quantity of the films and propose an equivalent circuit on the basis of complex capacitance, admittance and impedance spectral studies.

  8. Polarity inversion in aluminum nitride thin films under high sputtering power

    SciTech Connect

    Akiyama, Morito; Kamohara, Toshihiro; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki

    2007-04-09

    The authors have investigated the influence of sputtering power on the piezoelectric response of aluminum nitride (AlN) thin films prepared on titanium nitride bottom electrodes. The piezoelectric response strongly depends on the sputtering power. The polar inversion was found by piezoresponse force microscopy. The polarity gradually changes from the N polarity to Al polarity with increasing sputtering power. The piezoelectric response of the films changes from -2.7 to +4.3 pC/N with increasing sputtering power from 100 to 500 W. Furthermore, the polarity inversion from the N polarity to Al polarity is observed by increasing sputtering power during growth.

  9. Determination of attenuation lengths and electron escape depths in silicon nitride thin films

    SciTech Connect

    Honggang Hu; Carim, A.H. . Dept. of Materials Science and Engineering)

    1993-11-01

    Amorphous silicon nitride thin films prepared by low pressure chemical vapor deposition have been investigated by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The attenuation lengths and escape depths of Si 2p photoelectrons with kinetic energy of 1,385 eV from silicon nitride thin films have been calculated. High resolution transmission electron microscopy (HRTEM) has been used to characterize the thin film thickness. The atomic density of Si in the films decreases with increasing film thickness, leading to a longer attenuation length for thicker films ([lambda][degree] [approx] 4.7 nm for films with thickness of t > 5 nm) than for thinner films ([lambda][degree] [approx] 3.6 nm, t < 4 nm). The attenuation length dependence on the film thickness and experimental setup also provides direct experimental evidence that the simple exponential model for electron attenuation may be inaccurate due to elastic scattering effects.

  10. Boron Nitride Nanotube Mat as a Low- k Dielectric Material with Relative Dielectric Constant Ranging from 1.0 to 1.1

    NASA Astrophysics Data System (ADS)

    Hong, Xinghua; Wang, Daojun; Chung, D. D. L.

    2016-01-01

    This paper reports that a boron nitride nanotube (BNNT) mat containing air and 1.4 vol.% BNNTs is a low- k dielectric material for microelectronic packaging, exhibiting relative dielectric constant of 1.0 to 1.1 (50 Hz to 2 MHz) and elastic modulus of 10 MPa. The mat is prepared by compacting BNNTs at 5.8 kPa. This paper also presents measurements of the dielectric properties of BNNTs (mostly multiwalled). The relative dielectric constant of the BNNT solid in the mat decreases with increasing frequency, with attractively low values ranging from 3.0 to 6.2; the alternating-current (AC) electrical conductivity increases with increasing frequency, with attractively low values ranging from 10-10 S/m to 10-6 S/m and an approximately linear relationship between log conductivity and log frequency. The specific contact capacitance of the interface between BNNTs and the electrical contact decreases with increasing frequency, with attractively high values ranging from 1.6 μF/m2 to 2.3 μF/m2. The AC electrical resistivity of the BNNT-contact interface decreases with increasing frequency, with high values ranging from 0.14 MΩ cm2 to 440 MΩ cm2.

  11. Marine corrosion protective coatings of hexagonal boron nitride thin films on stainless steel.

    PubMed

    Husain, Esam; Narayanan, Tharangattu N; Taha-Tijerina, Jose Jaime; Vinod, Soumya; Vajtai, Robert; Ajayan, Pulickel M

    2013-05-22

    Recently, two-dimensional, layered materials such as graphene and hexagonal boron nitride (h-BN) have been identified as interesting materials for a range of applications. Here, we demonstrate the corrosion prevention applications of h-BN in marine coatings. The performance of h-BN/polymer hybrid coatings, applied on stainless steel, were evaluated using electrochemical techniques in simulated seawater media [marine media]. h-BN/polymer coating shows an efficient corrosion protection with a low corrosion current density of 5.14 × 10(-8) A/cm(2) and corrosion rate of 1.19 × 10(-3) mm/year and it is attributed to the hydrofobic, inert and dielectric nature of boron nitride. The results indicated that the stainless steel with coatings exhibited improved corrosion resistance. Electrochemical impedance spectroscopy and potentiodynamic analysis were used to propose a mechanism for the increased corrosion resistance of h-BN coatings. PMID:23618222

  12. Thin films of pure vanadium nitride: Evidence for anomalous non-faradaic capacitance

    NASA Astrophysics Data System (ADS)

    Bondarchuk, Oleksandr; Morel, Alban; Bélanger, Daniel; Goikolea, Eider; Brousse, Thierry; Mysyk, Roman

    2016-08-01

    An impressive gravimetric capacitance of 1300 F g-1 (surface capacitance ∼3.3 mF cm-2) reported by Choi et al., 2006 for nanosized vanadium nitride has stimulated considerable interest in vanadium nitride as a potential electrode material for energy storing systems - supercapacitors. The postulated mechanism of charge storage in vanadium nitride materials involves redox reactions in the thin surface layer of vanadium oxide while the core vanadium nitride serves exclusively as a conducting platform. In this study we have synthesized pure oxygen-free vanadium nitride films and have found that they are capable of delivering a surface capacitance of up to ∼3 mF cm-2 at a potential scan rate of 3 mV s-1 and ∼2 mF cm-2 at a potential scan rate of 1 V s-1 in aqueous electrolytes. Combining electrochemical testing with X-ray photoelectron spectroscopy characterization has revealed that redox reactions play no or little role in the electrochemical response of pure VN, in contrast to the common wisdom stemming from the electrochemical response of oxygen-containing films. An alternative charge storage mechanism - space charge accumulation in a subsurface layer of ∼100 nm - was put forward to explain the experimentally observed capacitance of VN films in aqueous electrolytes.

  13. Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Huang, Jung-Jie; Liu, Chan-Jui; Lin, Hung-Chien; Tsai, Cheng-Ju; Chen, Yung-Pei; Hu, Guo-Ren; Lee, Cheng-Chung

    2008-12-01

    Influences of silicon nitride (SiNx) films on the electrical performances of hydrogenated amorphous silicon thin film transistors (a-Si : H TFTs) are studied. Relatively low temperature (200 °C) SiNx films are prepared by plasma enhanced chemical vapour deposition at different radio-frequency powers. Results indicate that the SiNx films at a radio-frequency power of 340 W (Power density = 1.96 × 10-1 W cm-2) are near-stoichiometric and have better interface quality. Therefore, a-Si : H TFTs with this SiNx gate dielectric layer have a high field effect mobility and sustain the bias stress. The field effect mobility is 0.59 cm2 V-1 s-1 and the threshold voltage shift after a constant voltage stress (CVS) for 2.8 h is 3.18 V. The electrical degradation mechanism of a-Si : H TFTs is studied from the capacitance-voltage measurement. The degradation of the a-Si : H TFT after CVS is due to the defect generation in the SiNx gate dielectric and a-Si : H active layers. However, when the surface roughness of the SiNx film is poor, the degradation from the a-Si : H/SiNx interface is predominated. Therefore, if the SiNx film is used as a gate dielectric layer to fabricate a-Si : H TFTs, the surface roughness and chemical composition of the SiNx film should be considered simultaneously.

  14. Bismuth pyrochlore-based thin films for dielectric energy storage

    NASA Astrophysics Data System (ADS)

    Michael, Elizabeth K.

    The drive towards the miniaturization of electronic devices has created a need for dielectric materials with large energy storage densities. These materials, which are used in capacitors, are a critical component in many electrical systems. Here, the development of dielectric energy storage materials for pulsed power applications, which require materials with the ability to accumulate a large amount of energy and then deliver it to the system rapidly, is explored. The amount of electrostatic energy that can be stored by a material is a function of the induced polarization and the dielectric breakdown strength of the material. An ideal energy storage dielectric would possess a high relative permittivity, high dielectric breakdown strength, and low loss tangent under high applied electric fields. The bismuth pyrochlores are a compositionally tunable family of materials that meet these requirements. Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate, were fabricated using a novel solution chemistry based upon the Pechini method. This solution preparation is advantageous because it avoids the use of teratogenic solvents, such as 2-methoxyethanol. Crystalline films fabricated using this solution chemistry had very small grains that were approximately 27 nm in lateral size and 35 nm through the film thickness. Impedance measurements found that the resistivity of the grain boundaries was two orders of magnitude higher than the resistivity of the grain interior. The presence of many resistive grain boundaries impeded conduction through the films, resulting in high breakdown strengths for these materials. In addition to high breakdown strengths, this family of materials exhibited moderate relative permittivities of between 55 +/- 2 and 145 +/- 5, for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 +/- 0.0001. Increases in the concentration of the tantalum

  15. THE CHARACTERISTIC IMPEDANCE OF RECTANGULAR TRANSMISSION LINES WITH THIN CENTER CONDUCTOR AND AIR DIELECTRIC

    EPA Science Inventory

    The characteristic impedance of large-scale rectangular strip transmission line facilities used for such purposes as EMI susceptibility testing, biological exposures, etc., is discussed. These lines are characterized by a thin center conductor and an air dielectric. Impedance dat...

  16. Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

    PubMed Central

    Quan Jiang, An; Jian Meng, Xiang; Wei Zhang, David; Hyuk Park, Min; Yoo, Sijung; Jin Kim, Yu; Scott, James F.; Seong Hwang, Cheol

    2015-01-01

    The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm−2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics. PMID:26440528

  17. Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

    PubMed

    Quan Jiang, An; Jian Meng, Xiang; Wei Zhang, David; Hyuk Park, Min; Yoo, Sijung; Jin Kim, Yu; Scott, James F; Seong Hwang, Cheol

    2015-01-01

    The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics. PMID:26440528

  18. Transverse electric surface mode in atomically thin Boron-Nitride.

    PubMed

    Merano, Michele

    2016-06-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analyzed in terms of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic nonradiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric nonradiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 μm and an intensity-propagation distance greater than 2 cm. PMID:27244441

  19. Transverse electric surface mode in atomically thin Boron–Nitride

    NASA Astrophysics Data System (ADS)

    Merano, Michele

    2016-06-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  20. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    NASA Astrophysics Data System (ADS)

    Tao, Jonathan Huai-Tse

    A three-step solution-based process had been used synthesize powders of GaN, AlN and their alloys. The complete solid solubility and tunable nature of these nitride band gaps in the visible spectrum were the motivation of these studies due to their application in solid state lighting. Energy dispersive X-ray spectroscopy confirmed the reduction in oxygen content for the GaN powders to as low as 4 atom % with an 8 % oxygen to nitrogen ratio. Relative to commercial GaN powders, the bandedge of the powders synthesized by such approach also shifted to higher energy, which indicated fewer defects, as observed from reflectance measurements. Inspired by the use of rare-earth elements as color emitters in fluorescent lamp phosphors, these elements were also used as activators in our nitride material. Visible emission was demonstrated through photoluminescence measurements in AlN powders activated with rare-earth elements Eu3+, Tb3+, Tm3+. These ions showed emission in the red, green and blue regions of the visible spectrum, respectively. Eu3+ and Tb3+ co-activation was also observed in an AlN sample that indicated successful energy transfer from the host to sensitizer, and subsequently to another activator. Tb3+ emission was observed under cathodoluminescence in GaN powders synthesized by the same method, and a concentration study showed no effect of concentration quenching up to 8 atom %. Using the same source powder, a pulsed-laser deposited thin film was fabricated that showed both band gap emission and activator-related emission, suggesting a reduction of defects when the powders were deposited as thin films. Additionally, GaN:Tb3+ films were also fabricated using metallorganic vapor phase epitaxy using precursors with and without oxygen ligands. Tb3+ emission was only observed in the sample fabricated from the precursor with oxygen ligand, suggestion that oxygen may be required for effective rare earth luminescence. Finally, Ga1-xAl xN alloy powders (x=0.5) and Ga1-x

  1. (Ba,Sr)TiO{sub 3} dielectrics: Relationship between bulk and thin film properties

    SciTech Connect

    Kingon, A. I.; Streiffer, S. K.; Parker, C. B.; Stemmer, S.

    1999-12-22

    Thin films of complex perovskites have a number of potentially important applications. Of major scientific and practical concern is the scaling of properties as film dimensions are reduced. This paper describes a satisfactory relationship between bulk and thin film dielectric properties of (Ba,Sr)TiO{sub 3}. Relative contributions of strain, A:B cation stoichiometry, and interface are separated to explain temperature dependent dielectric behavior.

  2. Thin-ribbon tapered coupler for dielectric waveguides

    NASA Technical Reports Server (NTRS)

    Yeh, C.; Otoshi, T. Y.; Shimabukuro, F. I.

    1994-01-01

    A recent discovery shows that a high-dielectric constant, low-loss, solid material can be made into a ribbon-like waveguide structure to yield an attenuation constant of less than 0.02 dB/m for single-mode guidance of millimeter/submillimeter waves. One of the crucial components that must be invented in order to guarantee the low-loss utilization of this dielectric-waveguide guiding system is the excitation coupler. The traditional tapered-to-a-point coupler for a dielectric rod waveguide fails when the dielectric constant of the dielectric waveguide is large. This article presents a new way to design a low-loss coupler for a high- or low-dielectric constant dielectric waveguide for millimeter or submillimeter waves.

  3. Bismuth pyrochlore thin films for dielectric energy storage

    SciTech Connect

    Michael, Elizabeth K. Trolier-McKinstry, Susan

    2015-08-07

    Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate were fabricated using chemical solution deposition. This family of materials exhibited moderate relative permittivities between 55 ± 2 and 145 ± 5 for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 ± 0.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. For example, at 10 kHz, the room temperature breakdown strength of bismuth zinc niobate was 5.1 MV/cm, while that of bismuth zinc tantalate was 6.1 MV/cm. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8 ± 2.0 J/cm{sup 3}, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7 ± 2.0 J/cm{sup 3}. Intermediate compositions of bismuth zinc niobate tantalate offered higher energy storage densities; at 10 mol. % tantalum, the maximum recoverable energy storage density was ∼66.9 ± 2.4 J/cm{sup 3}.

  4. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  5. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  6. Surface scattering mechanisms of tantalum nitride thin film resistor

    PubMed Central

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current–voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms. PMID:24725295

  7. Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers

    NASA Astrophysics Data System (ADS)

    Yu, Hsin-Chieh; Chen, Ying-Chih; Huang, Chun-Yuan; Su, Yan-Kuin

    2012-03-01

    Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔVth, >20 V), switchable channel current, and long retention time.

  8. Thin Dielectric Films Containing Tb{sup 3+} Ions For Application In Thin Film Solar Cells

    SciTech Connect

    Sendova-Vassileva, M.; Angelov, O.; Dimova-Malmovska, D.; Baumgartner, K.; Carius, R.; Hollaender, B.

    2010-01-21

    Thin transparent dielectric films containing Tb{sup 3+} are developed for application as spectral converters of the solar spectrum in thin film silicon solar cells. The results on the deposition and characterization of thin SiO{sub 2} and Al{sub 2}O{sub 3} films containing Tb{sup 3+} ions are presented. The films are prepared by RF magnetron co-sputtering, a well established technique for large area coatings. Photoluminescence (PL) is measured at room temperature, using the 488 nm line of an Ar laser and a nitrogen-cooled CCD camera attached to a monochromator. The dependence of the PL intensity on the concentration of Tb in the film is studied. It is found that the intensity exhibits a maximum at about 1 at.%. Annealing studies are performed on SiO{sub 2}:Tb with two different methods to improve the PL intensity. In both regimes of annealing, the best results for thin SiO{sub 2}:Tb films are obtained in the temperature range of 650-700 deg. C. After treatment at this temperature the Tb PL increases 2.5-3 times.

  9. Thin Dielectric Films Containing Tb3+ Ions For Application In Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Sendova-Vassileva, M.; Baumgartner, K.; Angelov, O.; Holländer, B.; Dimova-Malmovska, D.; Carius, R.

    2010-01-01

    Thin transparent dielectric films containing Tb3+ are developed for application as spectral converters of the solar spectrum in thin film silicon solar cells. The results on the deposition and characterization of thin SiO2 and Al2O3 films containing Tb3+ ions are presented. The films are prepared by RF magnetron co-sputtering, a well established technique for large area coatings. Photoluminescence (PL) is measured at room temperature, using the 488 nm line of an Ar laser and a nitrogen-cooled CCD camera attached to a monochromator. The dependence of the PL intensity on the concentration of Tb in the film is studied. It is found that the intensity exhibits a maximum at about 1 at.%. Annealing studies are performed on SiO2:Tb with two different methods to improve the PL intensity. In both regimes of annealing, the best results for thin SiO2:Tb films are obtained in the temperature range of 650-700° C. After treatment at this temperature the Tb PL increases 2.5-3 times.

  10. Effect of dispersion degree of orientation on dielectric properties of (100)-oriented PST thin film

    NASA Astrophysics Data System (ADS)

    Li, Xiaoting; Hu, Tao; Wang, Biao; Weng, Wenjian; Han, Gaorong; Song, Chenglu; Ma, Ning; Du, Piyi

    2013-12-01

    (100) Oriented (PbxSr1-x)TiO3 (PST) thin films were prepared on indium tin oxide coated glass substrates by sol-gel technique with rapid thermal processing. The dielectric permittivity and tunability of the thin films with different dispersion degrees of orientation were investigated in detail by characterizing the full width at half maximum of their (100) peak based on rocking curves at different annealing temperatures. Influence of orientation dispersion on dielectric properties was exhibited in the tunable dielectric thin films. It shows that the dielectric constant and hence the tunability of the sol-gel derived PST thin films are improved with the decrease in the dispersion degree of orientation of the perovskite phase other than the increase in the content of crystalline phase in the thin films. The dielectric constant (capacitance) and figure of merit of the oriented thin films are 3-6 times and 1 times higher than that of randomly oriented thin film respectively.

  11. Pulsed laser deposition of niobium nitride thin films

    SciTech Connect

    Farha, Ashraf Hassan Elsayed-Ali, Hani E.; Ufuktepe, Yüksel; Myneni, Ganapati

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  12. The electrical properties of sulfur-implanted cubic boron nitride thin films

    NASA Astrophysics Data System (ADS)

    Deng, Jin-Xiang; Qin, Yang; Kong, Le; Yang, Xue-Liang; Li, Ting; Zhao, Wei-Ping; Yang, Ping

    2012-04-01

    Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400 °C and 800 °C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.

  13. Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Ng, Tse Nga; Daniel, Jürgen H.; Sambandan, Sanjiv; Arias, Ana-Claudia; Chabinyc, Michael L.; Street, Robert A.

    2008-02-01

    The operational stability of organic thin-film transistors (OTFTs) comprising bilayer polymer dielectric of poly(methylsilsesquioxane) (pMSSQ) and either the epoxy resin SU-8 or poly(4-vinyl phenol) was examined. Although not in direct contact with the semiconductor materials, the bottom dielectric layer did affect OTFT stability through water ion movement or charge injection inside the bottom dielectrics. In the comparison between our best polymer dielectric pMSSQ/SU-8 to the silicon oxide dielectric, the result emphasized that, at equal initial charge concentration, polymer dielectrics did not alleviate threshold-voltage shift but did maintain more stable current due to the lower gate capacitance than silicon oxide.

  14. Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

    2003-01-01

    Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

  15. Influence of argon gas flow on mechanical and electrical properties of sputtered titanium nitride thin films

    NASA Astrophysics Data System (ADS)

    Khojier, Kaykhosrow; Savaloni, Hadi; Shokrai, Ebrahim; Dehghani, Zohreh; Dehnavi, Naser Zare

    2013-07-01

    Titanium nitrides have good mechanical, tribological, electrical, biomedical, and optical properties; therefore, they are used to harden and protect cutting and sliding surfaces, as semiconductor devices, and as a nontoxic exterior for biomedical applications. The dependence of the mechanical and electrical properties of titanium nitride thin films deposited on silicon substrates by direct-current reactive magnetron sputtering technique on argon gas flow (in the range of 8 to 20 sccm) was investigated. The crystallographic structure of the films was studied by X-ray diffraction (XRD), while surface morphology was studied using atomic force microscopy (AFM). Mechanical and electrical properties of these films were investigated by nanoindentation test and a four-point probe instrument, respectively. The XRD patterns showed titanium nitride (TiN) formation with a face-centered cubic structure for all samples. It was also observed that (111) crystallographic direction was the preferred orientation for TiN thin films which became more pronounced with increasing argon gas flow. The AFM images showed a granular structure for TiN layers. The hardness, crystallite/grain size (obtained from XRD and AFM), and surface roughness increased with the flow of argon gas, while elastic modulus and dislocation density in the films decreased. The study on electrical properties showed that the dependence of voltage with current for all samples was linear, and film resistivity was increased with argon gas flow.

  16. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Savvides, N.; Musca, Charles A.; Martyniuk, Mariusz P.; Faraone, Lorenzo

    2005-05-01

    Plasma deposited nitrogen-rich silicon nitride thin films were prepared at temperatures between 80 and 300 °C. The infrared transmission (400-4000cm-1) was measured, and selected absorption bands were quantified through a multiple Lorentzian oscillator parametric analysis. It is observed that the concentration of silicon-centered tetrahedra bonded together through nitrogen atoms increases monotonically with increasing deposition temperature. A qualitative model is presented to highlight the impact of the active adsorption site density on the degree of stepped (ordered) nucleation at the vapor-film interface. The importance of this growth profile, in particular for micro-systems-technology, is discussed in conjunction with measurements of the biaxial modulus and residual stress of the thin films. A mechanism for residual stress controllability is also presented. The atomic concentrations of silicon, nitrogen, and hydrogen in the thin films were calculated using infrared calibration factors derived from the deposition temperature dependent condensation processes. The results for silicon nitride thin films deposited at 300 °C were observed to be similar in composition to silicon diimide. Additional observations of the infrared transmission characteristics are reported, which include the identification of silazane bridge characteristics for the absorption feature around 610cm-1, which is typically associated with Si-H (bending) absorption.

  17. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.

    PubMed

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-12-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms. PMID:27251325

  18. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications

    NASA Astrophysics Data System (ADS)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2016-06-01

    In this letter, we propose a novel low-temperature nitridation technology on a tantalum nitride (TaN) thin film resistor (TFR) through supercritical carbon dioxide (SCCO2) treatment for temperature sensor applications. We also found that the sensitivity of temperature of the TaN TFR was improved about 10.2 %, which can be demonstrated from measurement of temperature coefficient of resistance (TCR). In order to understand the mechanism of SCCO2 nitridation on the TaN TFR, the carrier conduction mechanism of the device was analyzed through current fitting. The current conduction mechanism of the TaN TFR changes from hopping to a Schottky emission after the low-temperature SCCO2 nitridation treatment. A model of vacancy passivation in TaN grains with nitrogen and by SCCO2 nitridation treatment is eventually proposed to increase the isolation ability in TaN TFR, which causes the transfer of current conduction mechanisms.

  19. Approaching intrinsic performance in ultra-thin silicon nitride drum resonators

    NASA Astrophysics Data System (ADS)

    Adiga, V. P.; Ilic, B.; Barton, R. A.; Wilson-Rae, I.; Craighead, H. G.; Parpia, J. M.

    2012-09-01

    We have fabricated circular silicon nitride drums of varying diameter (20 μm to 1 mm) and thickness (15 nm-75 nm) using electron beam lithography and measured the dissipation (Q-1) of these amorphous silicon nitride resonators using optical interferometric detection. We observe that the dissipation is strongly dependent on mode type for relatively large, thick membranes as predicted by the current models of dissipation due to clamping loss. However, this dependence is drastically reduced for smaller or thinner resonators, with thinner resonators showing higher quality factors, for low order modes. Highest quality factors that can be reached for these thin resonators seems be limited by an intrinsic mechanism and scales linearly with the diameter of the membrane. Our results are promising for mass sensing and optomechanical applications where low mass and high Qs are desirable.

  20. Photoacoustic Evaluation of the Mechanical Properties of Aluminum / Silicon Nitride Double-Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M.

    2006-03-01

    In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. In a second set of experiments, dispersion curves of the A0 mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made.

  1. Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics

    SciTech Connect

    McPherson, J. W.

    2015-11-28

    The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field E{sub diel} occurs and this causes a sharp rise in the effective Lorentz factor L{sub eff}. At capacitor and transistor edges, L{sub eff} is found to increase to a value 2/3 < L{sub eff} < 1. The increase in L{sub eff} results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has important time-dependent dielectric breakdown (TDDB) implications for all electronic devices utilizing polar materials, including GaN devices that suffer from device-edge TDDB.

  2. Role of fluorine in plasma nitridated ZrO{sub 2} thin films under irradiation

    SciTech Connect

    Huang, A. P.; Xiao, Z. S.; Liu, X. Y.; Wang, L.; Chu, Paul K.

    2008-09-22

    The role of fluorine in plasma-nitridated ZrO{sub 2} thin films under electron irradiation is investigated in situ by real-time high-resolution transmission electron microscopy. Fluorine and nitrogen codoping can suppress the microstructure evolution during electron beam bombardment and the corresponding origin is probed and verified. The results obtained by irradiation with an ultraviolet laser show that plasma fluorination can effectively remove the dissociative N or O particles in the ZrO{sub 2} thin films which can escape from the interstitial sites under electron irradiation. The mechanism of the irradiation stability of the F and N codoped ZrO{sub 2} thin film is also discussed.

  3. Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

    SciTech Connect

    Gupta, Rachana; Pandey, Nidhi; Tayal, Akhil; Gupta, Mukul E-mail: dr.mukul.gupta@gmail.com

    2015-09-15

    Cobalt nitride (Co-N) thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (R{sub N{sub 2}}) was varied. As R{sub N{sub 2}} increases, Co(N), Co{sub 4}N, Co{sub 3}N and CoN phases are formed. An incremental increase in R{sub N{sub 2}}, after emergence of Co{sub 4}N phase at R{sub N{sub 2}} = 10%, results in a linear increase of the lattice constant (a) of Co{sub 4}N. For R{sub N{sub 2}} = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co{sub 4}N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M{sub 4}N) have been theoretically predicted. Incorporation of N atoms in M{sub 4}N configuration results in an expansion of a (relative to pure metal) and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M{sub 4}N compounds. Though a higher (than pure Fe) magnetic moment for Fe{sub 4}N thin films has been evidenced experimentally, higher (than pure Co) magnetic moment is evidenced in this work.

  4. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  5. Iron-Nitride Thin Films Prepared by Arc-Discharge-Type Ion-Plating

    NASA Astrophysics Data System (ADS)

    Umeda, Kazuo; Kawashimo, Yasushi; Nakasone, Masami; Harada, Shigehisa; Tasaki, Akira

    1984-12-01

    Ferromagnetic iron-nitride thin films were studied as part of a programme of research into recording media. Samples were prepared by using a new type of ion-plating called “arc-discharge-type ion-plating”. In order to ionize metal vapor and nitrogen gas effectively, a new ionization electrode was introduced between 2× 10-4 and 2× 10-3 Torr. Nitrized films were obtained when the films were prepared above 2× 10-4 Torr. The composition of the films was analyzed using Mössbauer spectroscopy, and it was confirmed that the films were highly corrosion-resistant.

  6. Single Nanoparticle-Based Heteronanojunction as a Plasmon Ruler for Measuring Dielectric Thin Films.

    PubMed

    Li, Li; Hutter, Tanya; Li, Wenwu; Mahajan, Sumeet

    2015-06-18

    Nondestructive, noninvasive and accurate measurement of thin film thicknesses on dielectric substrates is challenging. In this work a ruler for measuring thin film thicknesses utilizes the heteronanojunction construct formed between a plasmonic nanoparticle and a high refractive index nonplasmonic substrate. The high near-field sensitivity in the nanojunction renders it suitable for measuring the thickness of intervening dielectric thin films. We demonstrate this by controlling the thickness of dielectric spacer layers created by overgrowing SiO2 thin films on commercially available silicon substrates. While Rayleigh (using dark-field) scattering measurements show that the spectral response is well correlated to the thickness of SiO2 spacer layers the distance-dependence is much steeper with surface-enhanced Raman scattering (SERS). Good agreement between 3D simulations and experimental results confirm the plasmon ruler construct's sensitivity to the dielectric thin film spacing. Thus, we postulate that this single nanoparticle based heteronanojunction configuration can serve as a convenient and simple ruler in metrology of thin films as well as a platform for SERS-based detection even in cases where plasmonically active films are not a suitable substrate. PMID:26266605

  7. Piezoelectric Behaviour of Sputtered Aluminium Nitride Thin Film for High Frequency Ultrasonic Sensors

    NASA Astrophysics Data System (ADS)

    Herzog, T.; Walter, S.; Bartzsch, H.; Gittner, M.; Gloess, D.; Heuer, H.

    2011-06-01

    Many new materials and processes require non destructive evaluation in higher resolutions by phased array ultrasonic techniques in a frequency range up to 250 MHz. This paper presents aluminium nitride, a promising material for the use as a piezoelectric sensor material in the considered frequency range, which contains the potential for high frequency phased array application in the future. This work represents the fundamental development of piezoelectric aluminium nitride films with a thickness of up to 10 μm. We have investigated and optimized the deposition process of the aluminium nitride thin film layers regarding their piezoelectric behavior. Therefore a specific test setup and a measuring station were created to determine the piezoelectric charge constant (d33) and the electro acoustic behavior of the sensor. Single element transducers were deposited on silicon substrates with aluminium electrodes for top and bottom, using different parameters for the magnetron sputter process, like pressure and bias voltage. Afterwards acoustical measurements up to 500 MHz in pulse echo mode have been carried out and the electrical and electromechanical properties were qualified. In two different parameter sets for the sputtering process excellent piezoelectric charge constant of about 8.0 pC/N maximum were obtained.

  8. Nanoindentation of plasma-deposited nitrogen-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Soh, Martin T. K.; Fischer-Cripps, A. C.; Savvides, N.; Musca, C. A.; Faraone, L.

    2006-07-01

    Nanoindentation was performed on plasma-deposited nitrogen-rich silicon nitride thin films deposited on various substrates between 150 and 300°C. A very simple and effective depth-profiling method is introduced, which involves indentation of thin films deposited on substrates with different mechanical properties. The primary advantage of this method is that it avoids the complications associated with many of the complex mathematical models available to deconvolve thin film mechanical properties, while nevertheless allowing the user to visually identify thin film properties. This method is demonstrated on our thin films, which have a hardness between 14 and 21GPa, and reduced modulus between 120 and 160GPa. The initial rise in hardness at low contact depths, commonly attributed to an indentation-size effect, is shown to be due to elastic contact between the indenter and thin film surface. This demonstrates the perils of blindly following the 10% rule for hardness calculation. The contribution of elastic and plastic deformations from nanoindentation is used to clarify the physical meaning of hardness and reduced modulus.

  9. Exciton-dominated dielectric function of atomically thin MoS2 films

    DOE PAGESBeta

    Yu, Yiling; Yu, Yifei; Cai, Yongqing; Li, Wei; Gurarslan, Alper; Peelaers, Hartwin; Aspnes, David E.; Van de Walle, Chris G.; Nguyen, Nhan V.; Zhang, Yong -Wei; et al

    2015-11-24

    We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function maymore » dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.« less

  10. Exciton-dominated dielectric function of atomically thin MoS2 films

    SciTech Connect

    Yu, Yiling; Yu, Yifei; Cai, Yongqing; Li, Wei; Gurarslan, Alper; Peelaers, Hartwin; Aspnes, David E.; Van de Walle, Chris G.; Nguyen, Nhan V.; Zhang, Yong -Wei; Cao, Linyou

    2015-11-24

    We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.

  11. Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

    PubMed Central

    Yu, Yiling; Yu, Yifei; Cai, Yongqing; Li, Wei; Gurarslan, Alper; Peelaers, Hartwin; Aspnes, David E.; Van de Walle, Chris G.; Nguyen, Nhan V.; Zhang, Yong-Wei; Cao, Linyou

    2015-01-01

    We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. The knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters. PMID:26598075

  12. Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

    2007-12-01

    This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

  13. Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

    NASA Astrophysics Data System (ADS)

    Liang, Wei-Zheng; Ji, Yan-Da; Nan, Tian-Xiang; Huang, Jiang; Zeng, Hui-Zhong; Du, Hui; Chen, Chong-Lin; Lin, Yuan

    2012-06-01

    Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique. The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion. Crystal structures, surface morphologies, and dielectric performance were examined and compared for BTO thin films annealed under different temperatures. Correlations between the fabrication conditions, microstructures, and dielectric properties were discussed. BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with inr ~ 400 and tan δ < 0.025 at 100 kHz. The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

  14. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    SciTech Connect

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J. Riechert, H.

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  15. Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

    NASA Astrophysics Data System (ADS)

    Li, X. T.; Du, P. Y.; Zhao, Y. L.; Tu, Y.; Dai, J. L.; Weng, W. J.; Han, G. R.; Song, C. L.

    2010-11-01

    Pb 0.4Sr 0.6TiO 3 (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2< x<0.4, the PST/Bi 2Ti 2O 7 biphase were obtained. The thin films with pure Bi 2Ti 2O 7 pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi 2Ti 2O 7 biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.

  16. Thermal Contact Conductance Analysis of Nitride and Carbonitride Thin Film Coatings for Thermal Interface Material Application

    NASA Astrophysics Data System (ADS)

    Subramani, Shanmugan; Thing, Lee Yuan; Devarajan, Mutharasu

    2015-12-01

    In order to reduce and maintain the bond line thickness between substrate and LED package, solid thin film with good thermal conductivity is suggested as thermal interface material and the proposed film thickness is about less than 1 µ. The surface parameter such as roughness and hardness is a key factor which alters the contact conductance between the two matt surfaces. Consequently, filtered vacuum cathodic arc deposited nitride thin films (CrN, TiN, AlTiN, and TiCN) on copper substrate were tested for thermal interface material applications in electronic packaging. The thermal contact conductance of the prepared thin films was evaluated using surface properties such as microhardness and surface roughness. The results were verified with the theoretical model. The measured microhardness and surface roughness of CrN thin film are 17 GPa (low) and 0.768 µm (high), respectively. The measured thermal contact conductance of all thin films showed linear properties for applied pressure and very close to the values of theoretical model. High value in thermal contact conductance of about 256 W/m2 K was noticed with CrN thin film at 1100 kPa. The percentage of deviation for our measured contact conductance value from the theoretical model value was decreasing for the increased contact pressure and observed low value (7 pct) for CrN thin film at 1100 kPa. The thermal conductivity of all thin films was also calculated from the conductance model and observed high value (19.34 W/mK) with CrN thin film.

  17. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density–voltage and frequency dependent (7 kHz–5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole–Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  18. Sol processing of conjugated carbon nitride powders for thin-film fabrication.

    PubMed

    Zhang, Jinshui; Zhang, Mingwen; Lin, Lihua; Wang, Xinchen

    2015-05-18

    The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO3, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse-coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin-film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo-electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes. PMID:25833791

  19. Influence of process parameters on properties of reactively sputtered tungsten nitride thin films

    SciTech Connect

    Addonizio, Maria L.; Castaldo, Anna; Antonaia, Alessandro; Gambale, Emilia; Iemmo, Laura

    2012-05-15

    Tungsten nitride (WN{sub x}) thin films were produced by reactive dc magnetron sputtering of tungsten in an Ar-N{sub 2} gas mixture. The influence of the deposition power on the properties of tungsten nitride has been analyzed and compared with that induced by nitrogen content variation in the sputtering gas. A combined analysis of structural, electrical and optical properties on thin WN{sub x} films obtained at different deposition conditions has been performed. It was found that at an N{sub 2} content of 14% a single phase structure of W{sub 2}N films was formed with the highest crystalline content. This sputtering gas composition was subsequently used for fabricating films at different deposition powers. Optical analysis showed that increasing the deposition power created tungsten nitride films with a more metallic character, which is confirmed with resistivity measurements. At low sputtering powers the resulting films were crystalline whereas, with an increase of power, an amorphous phase was also present. The incorporation of an excess of nitrogen atoms resulted in an expansion of the W{sub 2}N lattice and this effect was more pronounced at low deposition powers. Infrared analysis revealed that in WN{sub x} films deposited at low power, chemisorbed N{sub 2} molecules did not behave as ligands whereas at high deposition power they clearly appeared as ligands around metallic tungsten. In this study, the influence of the most meaningful deposition parameters on the phase transformation reaction path was established and deposition conditions suitable for producing thermally stable and highly crystalline W{sub 2}N films were found.

  20. Thickness dependence of Young's modulus and residual stress of sputtered aluminum nitride thin films

    NASA Astrophysics Data System (ADS)

    Schneider, M.; Bittner, A.; Schmid, U.

    2014-11-01

    Aluminum nitride thin films are commonly used as active layer in micro-/nanomachined devices due to their piezoelectric properties. In order to predict the performance of advanced device architectures, careful modelling and simulation using techniques such as finite element analysis are of the utmost importance. An accurate knowledge of the corresponding thin film material properties is therefore required. This work focuses on the mechanical properties residual stress and Young's modulus over a wide thickness range from 100 to 1200 nm. The load-deflection technique is used to measure the bending curve of a circumferentially clamped, circular aluminum nitride diaphragm under a uniformly distributed pressure load. The bending curves are analyzed using an advanced analytical approach rather than commonly used models for load-deflection methods, thus resulting in a higher accuracy. It is found that the Young's modulus is nearly independent of film thickness, whereas the tensile residual stress exhibits a maximum at a thickness of about 600 nm. A thorough discussion of possible error sources is presented and approaches to minimize their impact are discussed.

  1. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    SciTech Connect

    Walmsley, B.A.; Liu, Y.; Hu, X.Z.; Bush, M.B.; Winchester, K.J.; Martyniuk, M.; Dell, J.M.; Faraone, L.

    2005-08-15

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  2. Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Walmsley, B. A.; Liu, Y.; Hu, X. Z.; Bush, M. B.; Winchester, K. J.; Martyniuk, M.; Dell, J. M.; Faraone, L.

    2005-08-01

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.

  3. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    NASA Astrophysics Data System (ADS)

    Doan, T. C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-05-01

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10-7 cm2/V for electrons and holes, which is comparable to the value of about 10-7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  4. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    SciTech Connect

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U.; Nicolay, P.

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  5. Dielectric and Ferroelectric Performance of Pb(Zr(x)Ti(1-x))O3 Thin Films with Compositional Gradients.

    PubMed

    He, Gang; Zhou, Yongju; Peng, Chao; Zhang, Yao; Pan, Wei

    2015-09-01

    A series of PZT thin films with compositional gradients were fabricated at ease by a combinatorial chemical solution deposition process. Their dielectric and ferroelectric properties are significantly different from uniform composition PZT films, depending on the composition, the span, and the direction of the compositional gradient. Among samples with the same average Zr content, the down-gradient thin films exhibit better dielectric and ferroelectric properties. PZT thin films with a narrow compositional gradient span favour better dielectric and ferroelectric properties. The down-gradient thin film PZT654 with a Zr-rich layer closest to the Pt substrate, in which the average composition is close to the morphotropic phase boundary (MPB, x = 0.52), shows the best dielectric and ferroelectric performance. These distinct thin films with different dielectric and ferroelectric properties could be designed by adjusting factors such as content, span and direction of the compositional gradient. PMID:26716290

  6. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

    NASA Astrophysics Data System (ADS)

    Guo, Y.; Li, H.; Robertson, J.

    2016-05-01

    AlN and Al oxy-nitride dielectric layers are proposed instead of Al2O3 as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al2O3, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al2O3 is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

  7. Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

    NASA Astrophysics Data System (ADS)

    Chiang, Chen-Kuo; Wu, Chien-Hung; Liu, Chin-Chien; Lin, Jin-Fu; Yang, Chien-Lun; Wu, Jiun-Yuan; Wang, Shui-Jinn

    2012-10-01

    The NH3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiOx interfacial layer (IL) (about 0.12 nm more in terms of EOT scaling) and a more densified HfZrO2 layer compared to those obtained using NH3 thermal annealing at a 16% nitrogen dose. NH3 thermal nitridation causes a large nitrogen distribution tail at the SiOx IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

  8. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    NASA Astrophysics Data System (ADS)

    Baniecki, John David

    This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

  9. Partially hollowed ultra-thin dielectric meta-surface for transmission manipulation.

    PubMed

    Liu, Guiqiang; Fu, Guolan; Liu, Zhengqi; Huang, Zhenping; Chen, Jian

    2016-09-01

    Impressive optical properties are numerically demonstrated in the partially hollowed dielectric meta-surface (p-HDMS), which consists of an air cavity array intercalated in an ultra-thin (~λ/6) high-index dielectric film. Multispectral transmission band-stop response with near-perfect spectral modulation depth is achieved. The spectral slop is up to 80%/nm, indicating the sharp and narrowband transmission behavior. Classical Malus law is confirmed by this sub-wavelength platform. Moreover, the multispectral light propagation manipulation can be perfectly reproduced by using the actual dielectric with absorption loss. In this all-dielectric meta-surface, conduction loss is avoided compared to its metallic plasmonic counterpart. Such configurations can therefore serve as excellent alternatives for plasmonic meta-surfaces and constitute an important step in nanophotonics. PMID:27607661

  10. Light absorption enhancement in thin-film solar cells using whispering gallery modes in dielectric nanospheres

    SciTech Connect

    Grandidier, Jonathan; Callahan, Dennis M; Munday, Jeremy N; Atwater, Harry A.

    2011-03-07

    A novel approach to increasing light absorption in thin-film solar cells is demonstrated. This new method involves redirecting the incident sunlight into the cell via coupling to the whispering gallery modes of dielectric spheres, which lie atop the cell. Such a scheme leads to a predicted current enhancement of >12% for a-Si.

  11. Dielectric properties of fluorocarbon thin films deposited by radio frequency sputtering of polytetrafluoroethylene

    NASA Astrophysics Data System (ADS)

    Gonon, P.; Sylvestre, A.

    2002-10-01

    We investigate the dielectric properties of fluorocarbon thin films deposited by radio-frequency magnetron sputtering of polytetrafluroethylene. The dielectric constant and the loss factor are studied as a function of frequency (0.1 Hz-1 MHz, infrared frequencies) and temperature (room temperature to 100 °C). The value of the dielectric constant is 1.8 at optical frequencies, and around 2.3 in the 0.1 Hz-1 MHz range. The background loss factor is around 0.8% in these samples. Two different polarization mechanisms are identified (β and γ relaxations). The γ process dominates the dielectric constant from 0.1 to 1 MHz. In this frequency range the dielectric constant decreases with temperature (about -4% from room temperature to 100 °C). Temperature dependence of the dielectric constant is well described by a simple Debye model (linear variation of the dielectric constant with 1/T). The γ relaxation is tentatively ascribed to C-F bonds (Nμ2=4×10-32 C2 m-1). The β relaxation has a loss peak located at very low frequencies (<0.1 Hz). It leads to an increase of loss below 10 Hz when temperature is increased above 75 °C. The high-frequency part of the β loss peak decreases as ω-0.35. Study of its temperature dependence leads to an activation energy of 0.66 eV.

  12. Methods for investigating thin dielectric films in the millimeter range

    NASA Astrophysics Data System (ADS)

    Vlasov, S. N.; Parshin, V. V.; Serov, E. A.

    2010-12-01

    An original method based on determining the characteristics of open Fabry-Perot resonator modes with different polarizations is proposed for measuring parameters of dielectric plates and films with a thickness smaller than λ/2 in the millimeter and submillimeter wavelength ranges. This method is used for determining the refractive index and tanδ, as well as the thickness of films made of isotropic materials. For anisotropic films of known thickness, the method makes it possible to measure the permittivity tensor components. Popular film materials such as Teflon (polytetrafluoroethylene, PTFE), lavsan (Mylar, polyethyleneterephthalate, PETP), and polyamide with a minimal thickness of ˜5 μm are investigated. Appreciable anisotropy of roll film materials and the dependence of the dielectric properties on the thickness, which is associated with manufacturing technology, are revealed. The dependence of the refractive index and tanδ on the air humidity is investigated

  13. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    PubMed

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa. PMID:23220817

  14. Plasmonic arrays of titanium nitride nanoparticles fabricated from epitaxial thin films.

    PubMed

    Murai, Shunsuke; Fujita, Koji; Daido, Yohei; Yasuhara, Ryuichiro; Kamakura, Ryosuke; Tanaka, Katsuhisa

    2016-01-25

    We have fabricated two-dimensional periodic arrays of titanium nitride (TiN) nanoparticles from epitaxial thin films. The thin films of TiN, deposited on sapphire and single crystalline magnesium oxide substrates by a pulsed laser deposition, are metallic and show reasonably small optical loss in the visible and near infrared regions. The thin films prepared were structured to the arrays of nanoparticles with the pitch of 400 nm by the combination of nanoimprint lithography and reactive ion etching. Optical transmission indicates that the arrays support the collective plasmonic modes, where the localized surface plasmon polaritons in TiN nanoparticles are radiatively coupled through diffraction. Numerical simulation visualizes the intense fields accumulated both in the nanoparticles and in between the particles, confirming that the collective mode originates from the simultaneous excitation of localized surface plasmon polaritons and diffraction. This study experimentally verified that the processing of TiN thin films with the nanoimprint lithography and reactive ion etching is a powerful and versatile way of preparing plasmonic nanostructures. PMID:26832498

  15. Resonant x-ray reflectivity study of partial decomposed boron nitride thin films using Indus-1 synchrotron

    SciTech Connect

    Nayak, Maheswar Lodha, Gyanendra S.

    2014-04-24

    We determined the microstructural parameters and chemical composition profile of partial decomposed boron nitride thin films using x-ray reflectivity near the respective absorption edges. The elemental specificity and optical contrast variation properties of the resonant effect are utilized to combine chemical analysis with physical microstructure of thin films from x-ray scattered intensities. We demonstrated these aspects through calculations and experiments in the soft x-ray region near the boron K-absorption edge.

  16. Correlation between the dielectric constant and porosity of nanoporous silica thin films deposited by the gas evaporation technique

    NASA Astrophysics Data System (ADS)

    Si, J. J.; Ono, H.; Uchida, K.; Nozaki, S.; Morisaki, H.; Itoh, N.

    2001-11-01

    Nanoporous silica thin films with low dielectric constants were deposited by gas evaporation of SiO2 nanoparticles in an argon atmosphere. With increasing gas pressure during the evaporation, the dielectric constant decreases, while the porosity increases. The correlation between the dielectric constant and porosity is well modeled by a serial connection of two capacitors, one with air and the other with SiO2 as the dielectric medium. This suggests that the dielectric constant of the nanoporous silica thin film using the gas evaporation technique is more effectively lowered by forming "uniformly" distributed voids of closed gaps than those of the nanoporous silica films with pores extending from the back to front surface. Therefore, the former nanoporous silica thin film requires less porosity to obtain a low dielectric constant and is regarded as an ideal low-k material.

  17. Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment

    PubMed Central

    Withers, Freddie; Bointon, Thomas Hardisty; Hudson, David Christopher; Craciun, Monica Felicia; Russo, Saverio

    2014-01-01

    We present the first study of the intrinsic electrical properties of WS2 transistors fabricated with two different dielectric environments WS2 on SiO2 and WS2 on h-BN/SiO2, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS2 with various thicknesses from single- up to four-layers and over a wide temperature range from 300 K down to 4.2 K shows that disorder intrinsic to WS2 is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides.

  18. Transition-metal-nitride-based thin films as novel energy harvesting materials

    PubMed Central

    Kerdsongpanya, Sit; Alling, Björn

    2016-01-01

    The last few years have seen a rise in the interest in early transition-metal and rare-earth nitrides, primarily based on ScN and CrN, for energy harvesting by thermoelectricity and piezoelectricity. This is because of a number of important advances, among those the discoveries of exceptionally high piezoelectric coupling coefficient in (Sc,Al)N alloys and of high thermoelectric power factors of ScN-based and CrN-based thin films. These materials also constitute well-defined model systems for investigating thermodynamics of mixing for alloying and nanostructural design for optimization of phase stability and band structure. These features have implications for and can be used for tailoring of thermoelectric and piezoelectric properties. In this highlight article, we review the ScN- and CrN-based transition-metal nitrides for thermoelectrics, and drawing parallels with piezoelectricity. We further discuss these materials as a models systems for general strategies for tailoring of thermoelectric properties by integrated theoretical–experimental approaches. PMID:27358737

  19. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    NASA Astrophysics Data System (ADS)

    Galeano-Osorio, D. S.; Vargas, S.; López-Córdoba, L. M.; Ospina, R.; Restrepo-Parra, E.; Arango, P. J.

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature ( Troom), 100 °C, 150 °C and 200 °C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 °C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the ID/ IG or sp 3/sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  20. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    SciTech Connect

    Belkerk, B. E.; Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.; Al Brithen, H.

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  1. Fabrication of an interdigitated sample holder for dielectric spectroscopy of thin films

    NASA Astrophysics Data System (ADS)

    Shenouda, Mina; Oliver, Derek R.

    2015-06-01

    A planar interdigitated sample substrate has been designed to support a thin-film sample of a polymer while the frequency-dependent dielectric properties of the thin film are measured. Trenches for the electrodes were etched into a SiO2/Si wafer surface. Chromium was used as an adhesion layer prior to thermal evaporation of copper for the body of the electrode. The device was placed in a standard probe station and the dielectric character was recorded as a function of frequency with an impedance analyser. Devices with 20 to 70 fingers were measured and the results compared to analytical and finite element simulations. At 1 kHz, the total capacitance of a typical 20-finger device was 8 pF. The capacitive contribution of the thin film due to the fringing field in the polymer was about 2% of the total capacitance of the fabricated structures.

  2. Scattering from thin dielectric straps surrounding a perfectly conducting structure

    NASA Technical Reports Server (NTRS)

    Al-Hekail, Zeyad; Gupta, Inder J.

    1989-01-01

    A method to calculate the electromagnetic scattered fields from a dielectric strap wrapped around convex, conducting structure is presented. A moment method technique is used to find the current excited within the strap by the incident plane wave. Then, Uniform Geometrical Theory of Diffraction (UTD) is used to compute the fields scattered by the strap. Reasonable agreement was obtained between the computed and the measured results. The results found in this study are useful in evaluating straps as a target support structure for scattering measurements.

  3. Effect of the growth process on boron nitride thin films electrical properties

    SciTech Connect

    Badi, N.; Bousetta, A.; Lu, M.

    1995-12-31

    Boron nitride thin films were grown on Si substrates using electron cyclotron resonance (ECR) plasma-ion beam (IBD), and neutral beam (NBD) assisted vapor depositions. The electrical properties of the BN films were investigated using Hall measurements. It was found that the films grown by NBD technique where p-type, those grown by ECR technique where n-type, whereas those grown by IBD where either n- to p-type depending on the ion energy. The composition of the films was investigated using EPMA, and it was found that most films were off-Stoichiometric (B/N <1 for ECR and B/N> 1 for NBD and IBD). The B/N ratio was higher for IBD BN films (up to 22 %). A model based on native defects centers (nitrogen vacancy and boron anti-site) is presented to account for the conductivity of the BN films.

  4. Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Yang, Yingchao; Lou, Jun

    2016-09-01

    Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

  5. Properties of carbon nitride thin films prepared by ion and vapor deposition

    NASA Astrophysics Data System (ADS)

    Chubaci, J. F. D.; Sakai, T.; Yamamoto, T.; Ogata, K.; Ebe, A.; Fujimoto, F.

    1993-06-01

    This paper reports on mechanica, and optical properties of carbon nitride films coatings formed by the ion and vapor deposition (IVD) method. The thin films were formed by nitrogen ion bombardment and simultaneous carbon vapor deposition on substrates of fused silica and silicon (100) wafers. The energy of nitrogen ion was varied from 0.2 to 10.0 keV and the composition ratio (C/N) was varied from 5.0 to 14.0. The X-ray diffraction study indicated that the films were amorphous. The FT-IR spectra showed a small peak between 2100 and 2200 cm -1 indicating the presence of a triple bonded C-N stretching mode and the XPS ones showed a broad peak of i-carbon with a peak-shoulder at a bonding energy for diamondlike covalent bond. All formed films have a high hardness.

  6. Influence of polar distribution on piezoelectric response of aluminum nitride thin films

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Kuwano, Noriyuki

    2008-03-03

    The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo/Si, and Mo/AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo/Si and Mo/AlN-IL/Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response.

  7. Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films

    SciTech Connect

    Akiyama, Morito; Kamohara, Toshihiro; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki

    2008-07-14

    The authors have investigated the influence of oxygen concentration in sputtering gas on the piezoelectric response of aluminum nitride (AlN) thin films prepared on silicon substrates. The piezoelectric response strongly depends on the oxygen concentration, and changes from +6.8 to -7.0 pC/N with increasing oxygen concentration from 0% to 1.2%. The polar direction drastically inverts from the Al polarity to N polarity. When the oxygen concentration in sputtering gas was 1.2%, the oxygen concentration in the AlN films was 7 at. %. Furthermore, the growth rate of the AlN films gradually decreases with increasing oxygen concentration in sputtering gas.

  8. Impact of sputter deposition parameters on molybdenum nitride thin film properties

    NASA Astrophysics Data System (ADS)

    Stöber, L.; Konrath, J. P.; Krivec, S.; Patocka, F.; Schwarz, S.; Bittner, A.; Schneider, M.; Schmid, U.

    2015-07-01

    Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.

  9. Hardness and deformation mechanisms of highly elastic carbon nitride thin films as studied by nanoindentation

    SciTech Connect

    Hainsworth, S.V.; Page, T.F.; Sjoestroem, H.; Sundgren, J.E.

    1997-05-01

    Carbon nitride (CN{sub x}) thin films (0.18 < x < 0.43), deposited by magnetron sputtering of C in a N{sub 2} discharge, have been observed to be extremely resistant to plastic deformation during surface contact (i.e., exhibit a purely elastic response over large strains). Elastic recoveries as high as 90% have been measured by nanoindentation. This paper addresses the problems of estimating Young`s modulus (E) and hardness (H) in such cases and shows how different strategies involving analysis of both loading and unloading curves and measuring the work of indentation each present their own problems. The results of some cyclic contact experiments are also presented and possible deformation mechanisms in the fullerene-like CN{sub x} structures discussed.

  10. Hard and elastic amorphous carbon nitride thin films studied by 13C nuclear magnetic resonance spectroscopy

    NASA Astrophysics Data System (ADS)

    Gammon, W. J.; Malyarenko, D. I.; Kraft, O.; Hoatson, G. L.; Reilly, A. C.; Holloway, B. C.

    2002-10-01

    The chemical bonding of hard and elastic amorphous carbon nitride (a-CNx) thin films was examined using solid-state 13C NMR spectroscopy. The films were deposited by DC magnetron sputtering in a pure nitrogen discharge on Si(001) substrates at 300 °C. Nanoindentation tests reveal a recovery of 80%, a hardness of 5 GPa, and an elastic modulus of 47 GPa. This combination of low modulus and high strength means the material can be regarded as hard and elastic; the material gives when pressed on and recovers its shape when the load is released. The 13C NMR results conclusively demonstrate that hard and elastic a-CNx has an sp2 carbon bonded structure and that sp3 hybridized carbons are absent. Our results stand in contrast with earlier work that proposed that the interesting mechanical properties of hard and elastic a-CNx were due, in part, to sp3 bonded carbon.

  11. Electrical Properties of PVP-SiO2-TMSPM Hybrid Thin Films as OFET Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Bahari, A.; Shahbazi, M.

    2016-02-01

    Organic-inorganic polyvinylpyrrolidone-silicon dioxide-3-(trimethoxysilyl)propyl methacrylate (PVP-SiO2-TMSPM) hybrid solutions have been synthesized using the sol-gel process with different amounts of TMSPM as coupling agent and equivalent amounts of PVP and SiO2. Hybrid solutions were deposited on p-type Si(111) substrates using the spin coating technique, as a gate dielectric material for use in thin-film transistors. The structural properties of the samples were investigated using Fourier-transform infrared spectroscopy and x-ray diffraction analysis. Atomic force microscopy and scanning electron microscopy techniques were applied to study the topography and morphology of the hybrid thin-film samples. Current-voltage ( I- V) curves, capacitance-voltage ( C- V) measurements, and the electrical properties of the organic hybrid thin-film gate dielectrics were also studied in a metal-insulator/polymer-semiconductor structure. According to the results, the J GS curves in terms of V GS showed gate leakage current densities small enough for use as gate dielectric material at interface layers. At V DS = 30 V, in the saturation region, I DS curves in terms of V GS presented higher charge carrier mobility ( μ FET,S = 0.0584 cm2 s-1 V-1) due to lower dielectric constant ( k = 11.43) in the sample with 0.05 weight ratio of TMSPM compared with other samples with different weight ratios of TMSPM.

  12. FDTD simulations and analysis of thin sample dielectric properties measurements using coaxial probes

    SciTech Connect

    Bringhurst, S.; Iskander, M.F.; White, M.J.

    1996-12-31

    A metallized ceramic probe has been designed for high temperature broadband dielectric properties measurements. The probe was fabricated out of an alumina tube and rod as the outer and inner conductors respectively. The alumina was metallized with a 3 mil layer of moly-manganese and then covered with a 0.5 mil protective layer of nickel plating. The probe has been used to make complex dielectric properties measurements over the complete frequency band from 500 MHz to 3 GHz, and for temperatures as high as 1,000 C. A 3D Finite-Difference Time-Domain (FDTD) code was used to help investigate the feasibility of this probe to measure the complex permittivity of thin samples. It is shown that by backing the material under test with a standard material of known dielectric constant, the complex permittivity of thin samples can be measured accurately using the developed FDTD algorithm. This FDTD procedure for making thin sample dielectric properties measurements will be described.

  13. Early stages of growth and crystal structure evolution of boron nitride thin films

    NASA Astrophysics Data System (ADS)

    Henry, Anne; Chubarov, Mikhail; Czigány, Zsolt; Garbrecht, Magnus; Högberg, Hans

    2016-05-01

    A study of the nucleation and crystal structure evolution at the early stages of the growth of sp2-BN thin films on 6H-SiC and α-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On α-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy.

  14. Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

    NASA Astrophysics Data System (ADS)

    Akiyama, Morito; Morofuji, Yukari; Kamohara, Toshihiro; Nishikubo, Keiko; Tsubai, Masayoshi; Fukuda, Osamu; Ueno, Naohiro

    2006-12-01

    We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were deposited using a radio frequency magnetron sputtering method at temperatures close to room temperature. The c axes of the AlN films were perpendicularly oriented to the PET film surfaces. The sensor consisting of the AlN and PET films is flexible like PET films and the electrical charge is linearly proportional to the stress within a wide range from 0to8.5MPa. The sensor can respond to the frequencies from 0.3 to over 100Hz and measures a clear human pulse wave form by holding the sensor between thumb and middle finger. The resolution of the pulse wave form is comparable to a sphygmomanometer at stress levels of 10kPa. We think that the origin of the high performance of the sensor is the deflection effect, the thin thickness and high elastic modulus of the AlN layer, and the thin thickness and low elastic modulus of the PET film.

  15. The influence of atomic nitrogen flux on the composition of carbon nitride thin films

    SciTech Connect

    Merel, P.; Chaker, M.; Tabbal, M.; Moisan, M.

    1997-12-01

    Carbon nitride (CN{sub x}) thin films have been deposited using a hybrid system combining pulsed laser deposition of graphite with the surface-wave discharge atomic nitrogen source (3{percent} N{sub 2} in Ar). Using this system, an experiment is designed to study the influence of the atomic nitrogen flux on the composition of the CN{sub x} thin films at various laser intensities. The nitrogen percentage in the thin films is positively correlated with the N atom flux impinging on the substrate surface but it is counter-productive to use excessively high values of laser intensities on the graphite target. For a laser intensity of 6{times}10{sup 8}W/cm{sup 2}, the nitrogen percentage increases with the N atom flux and saturates at only about 16 at.{percent}. On the other hand, a maximum nitrogen percentage of 30 at.{percent} is obtained at the much lower laser intensity of 5{times}10{sup 7}W/cm{sup 2}. {copyright} {ital 1997 American Institute of Physics.}

  16. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

    PubMed

    Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

    2016-01-01

    Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality. PMID:27458024

  17. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

    2016-07-01

    Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

  18. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    PubMed Central

    Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

    2016-01-01

    Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality. PMID:27458024

  19. Thermally driven sign switch of static dielectric constant of VO2 thin film

    NASA Astrophysics Data System (ADS)

    Kana Kana, J. B.; Vignaud, G.; Gibaud, A.; Maaza, M.

    2016-04-01

    Smart multifunctional materials exhibiting phase transition and tunable optical and/electrical properties provide a new direction towards engineering switchable devices. Specifically, the reversible, tunable and sign switch dielectric constants via external temperature stimuli observed in vanadium dioxide (VO2) make it a candidate of choice for tunable and switchable technologies devices. Here we report new aspect of the metal-insulator transition (MIT) through the sign switch of the static dielectric constant εS of pure VO2. As it is shown, the static dielectric constant showed an abrupt change from positive at T < 70 °C to negative at T > 70 °C. εS > 0 confirms the insulating phase where charges are localized while εS < 0 confirms the metallic phase of VO2 where charges are delocalized. We report for the first time the tunability of the dielectric constant from a negative sign for the static dielectric constant of VO2 thin film rarely found in real physical systems. We also demonstrate the tunability and switchability of the real and imaginary part of the dielectric constant (ε) via external temperature stimuli. More specifically, the real (ε) and Imaginary (ε) showed an abrupt thermal hysteresis which clearly confirms the phase transition.

  20. Strongly enhanced mode selection in a thin dielectric-coated layered microcavity laser

    NASA Astrophysics Data System (ADS)

    Moon, Hee-Jong; Kang, Dong-Yun

    2007-06-01

    Strong mode selection through an enhanced interferential coupling effect was observed in a thin dielectric-coated layered cylindrical microcavity laser. The strong coupling effect was induced owing to an enhanced reflectivity of around 50% at the dielectric-coated inner boundary of a fused silica capillary filled with a dye-doped liquid. At an optimized coating thickness of about 0.4 μm, the lasing peaks appeared only at the wavelengths corresponding to the constructive interference condition, whereas those from a bare capillary were weakly modulated.

  1. Dynamic electrical response of thin dielectric films measured by Electrostatic Force Microscopy

    NASA Astrophysics Data System (ADS)

    Williams, Clayton; Klein, Levente

    2002-03-01

    Electrostatic Force Microscopy measurements have been performed on thin dielectric films on conducting substrates. Cantilever oscillation amplitude versus distance curves are measured as a function of the frequency of the voltage applied between tip and sample. When a DC voltage is applied, the oscillation amplitude versus distance curve is significantly different from that when a low frequency (500 Hz) AC voltage is applied (cantilever resonance at 125 kHz). The frequency dependence of the AC force response for different dielectric films (SiO2 and Al_2O_3) are studied. The frequency dependence is accounted for by the movement of charge near the sample surface with a finite response time.

  2. The influence of the ion beam on the structure and optical properties of titanium nitride nano-scale thin films

    NASA Astrophysics Data System (ADS)

    Odeh, Ibrahim; Elian, Rajaa

    2015-12-01

    Titanium nitride nano-scale thin films have been prepared by ion beam assisted reactive DC magnetron sputtering. The films are characterized by XRD, SEM and TEM. The films are found to be amorphous. The effect of the ion beam during deposition was evident from smoothness of film surface (SEM and TEM images) and modifications in optical properties. Investigation of the optical constants shows stable refractive index dominating most of the visible range. The films are not highly absorptive in the visible range. An energy gap of 2.9 ± 0.1 eV is estimated for the IBAD amorphous titanium nitride nano-thin films. The stability of the films at normal room environment in addition to the golden color makes the nano-thin films suitable for hard and decorative coatings.

  3. The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Yurjev, G. S.; Fainer, N. I.; Maximovskiy, E. A.; Kosinova, M. L.; Sheromov, M. A.; Rumyantsev, Yu. M.

    1998-02-01

    The structure of semiconductor and dielectric thin (100-300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station "Anomalous scattering" of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu 2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si 3N 4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.

  4. Synthesis and characterization of boron carbon nitride thin films as protective overcoat for hard disk drives

    NASA Astrophysics Data System (ADS)

    Chen, Yanfeng

    The current goal in the magnetic storage industry is to reach the areal density of 1Tbit/in2 in a few years. This requires the head-media spacing (HMS), which includes media overcoat, lubricant layer, air bearing, and head overcoat, not to exceed 5.0 nm. Trade-off between these layers results in requiring the protective overcoat to be 1.0 nm or less. The protective overcoat must be hard, wear-resistant, continuous, thermally stable, and compatible with the magnetic layer and lubricant. This thesis work is mainly to develop protective overcoat for ultra high density hard disk drives (HDD). Amorphous carbon nitride (a-CNx) thin films were synthesized using pulseDC magnetron sputtering. The influence of substrate bias, substrate tilt, and substrate rotation on film growth and properties was studied. X-ray reflectivity (XRR) was used to measure film density, roughness and thickness. Surface roughness and thickness measurements from XRR are comparable to AFM and surface profiler measurements respectively. a-CNx films have good mechanical properties. Auger electron spectroscopy (AES) and high resolution transmission microscope (HRTEM) were used to obtain the film composition and microstructure. HRTEM cross sectioned experiments showed that CN x film is amorphous. Chemical corrosion experiments display drastic decrease of corrosion spots for thin films synthesized under optimum conditions. In pursuit of new materials for hard disk drive protective overcoat, boron carbide (B4C) and boron carbon nitride (BxC yNz) thin films were synthesized by pulse-DC magnetron sputtering. Effects of target power, target pulse frequency, substrate bias and pulse frequency on surface roughness were studied by AFM. Nitrogen incorporation into B4C films, which gives BxCyNz thin films, has a beneficial effect to decrease the film roughness. Auger electron spectroscopy was used to characterize the film composition. High-resolution cross-sectioned TEM studies showed that both films are amorphous

  5. Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

    PubMed

    van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

    2015-08-12

    We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells. PMID:26107806

  6. Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties

    DOEpatents

    Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

    2000-05-02

    A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

  7. Integration of metal-organic frameworks into an electrochemical dielectric thin film for electronic applications

    PubMed Central

    Li, Wei-Jin; Liu, Juan; Sun, Zhi-Hua; Liu, Tian-Fu; Lü, Jian; Gao, Shui-Ying; He, Chao; Cao, Rong; Luo, Jun-Hua

    2016-01-01

    The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays. However, research focused on potential applications in electronic devices is in its infancy. Here we present a facile strategy by which interpenetrated, crystalline metal-organic framework films are deposited onto conductive metal-plate anodes via in situ temperature-controlled electrochemical assembly. The nanostructure of the surface as well as the thickness and uniformity of the film are well controlled. More importantly, the resulting films exhibit enhanced dielectric properties compared to traditional inorganic or organic gate dielectrics. This study demonstrates the successful implementation of the rational design of metal-organic framework thin films on conductive supports with high-performance dielectric properties. PMID:27282348

  8. Integration of metal-organic frameworks into an electrochemical dielectric thin film for electronic applications

    NASA Astrophysics Data System (ADS)

    Li, Wei-Jin; Liu, Juan; Sun, Zhi-Hua; Liu, Tian-Fu; Lü, Jian; Gao, Shui-Ying; He, Chao; Cao, Rong; Luo, Jun-Hua

    2016-06-01

    The integration of porous metal-organic frameworks onto the surface of materials, for use as functional devices, is currently emerging as a promising approach for gas sensing and flexible displays. However, research focused on potential applications in electronic devices is in its infancy. Here we present a facile strategy by which interpenetrated, crystalline metal-organic framework films are deposited onto conductive metal-plate anodes via in situ temperature-controlled electrochemical assembly. The nanostructure of the surface as well as the thickness and uniformity of the film are well controlled. More importantly, the resulting films exhibit enhanced dielectric properties compared to traditional inorganic or organic gate dielectrics. This study demonstrates the successful implementation of the rational design of metal-organic framework thin films on conductive supports with high-performance dielectric properties.

  9. A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

    SciTech Connect

    Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Qiming

    2013-01-01

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

  10. Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

    NASA Astrophysics Data System (ADS)

    Sengodan, R.; Shekar, B. Chandar; Sathish, S.

    Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

  11. Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium

    NASA Astrophysics Data System (ADS)

    Tsui, Bing-Yue; Kao, Ming-Hong

    2013-07-01

    Although high channel electron mobility has been reported after some passivation techniques, the performance of n-channel Ge metal-oxide-semiconductor field-effect transistor is still limited by the high Schottky barrier height at the metal/n-Ge contact interface, which comes from the Fermi level pinning effect. Recent experiments demonstrated that the Schottky barrier height can be reduced by inserting a thin dielectric layer between metal and Ge. However, the mechanism has not been well clarified. In this paper, the metal induced gap state model, the dipole layer model, and the fixed charge model are verified by varying contact metals, dielectric thicknesses, as well as the annealing temperatures. The pinning factor is improved slightly by dielectric insertion but its value is independent of the dielectric thickness and is still much lower than the ideal value of the non-pinning case. This pinning effect is consistent with the Fermi level pinning at the metal/TiO2 interface. After thermal process, no interfacial layer forms at the TiO2/Ge interface and the TiO2 crystallizes gradually after annealing but the Schottky barrier height increases. Since the amount of fixed charges in the thin dielectric layer estimated from a metal-insulator-semiconductor structure is about 2 × 1011 cm-2 and is insufficient to produce the observed 0.5 eV Schottky barrier height reduction, it is thus recommended that the main mechanism comes from the change of interface dipoles and the annealing effect is attributed to the short-range ordering of the TiO2 layer. Furthermore, dielectric with low conduction band offset which has good thermal stability should be explored.

  12. Electric-field noise above a thin dielectric layer on metal electrodes

    NASA Astrophysics Data System (ADS)

    Kumph, Muir; Henkel, Carsten; Rabl, Peter; Brownnutt, Michael; Blatt, Rainer

    2016-02-01

    The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electric-field noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.

  13. Non-contact C-V measurements of ultra thin dielectrics

    NASA Astrophysics Data System (ADS)

    Edelman, P.; Savtchouk, A.; Wilson, M.; D'Amico, J.; Kochey, J. N.; Marinskiy, D.; Lagowski, J.

    2004-07-01

    In this paper, we present a non-contact C-V technique for ultra-thin dielectrics on silicon. The technique uses incremental corona charging of dielectric and a measurement of the surface potential with a vibrating capacitive electrode. A differential quasistatic C-V curve is generated using time-resolved measurements. The technique incorporates transconductance corrections that enable corresponding ultra-low electrical oxide thickness (EOT) determination down to the sub-nanometer range. It also provides a means for monitoring the flat band voltage, V{FB}, the interface trap spectrum, D{IT}, and the total dielectric charge, Q{TOT}. This technique is seen as a replacement for not only MOS C-V measurements but also for mercury-probe C-V. In addition, EOT measurement by the corona C-V has a major advantage over optical thickness methods because it is not affected by water adsorption and molecular airborne contamination, MAC. These effects have been a problem for optical metrology of ultra-thin dielectrics.

  14. Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

    NASA Astrophysics Data System (ADS)

    Sangwan, Vinod; Jariwala, Deep; Karmel, Hunter; Alaboson, Justice; Lauhon, Lincoln; Marks, Tobin; Hersam, Mark

    2012-02-01

    The potential of graphene in integrated analog and digital circuits can only be fully realized through incorporation of ultra-thin gate dielectrics to enable large-scale small-channel graphene field-effect transistors (GFETs). Atomic-layer deposition (ALD) is a viable technique to fabricate gate-dielectrics, however, it requires a seeding layer on otherwise inert graphene. Here, we demonstrate a single molecule thick perylene-3,4,9,10-tetracarboxylic dianhydride overlayer as an effective seeding layer to grow high-κ Al2O3 on mechanically exfoliated graphene for high-performance GFETs. Using an ultra-thin (< 1nm) seeding layer, in contrast to polymer films (5-10 nm), we demonstrate fabrication of the thinnest ALD-grown gate-dielectric (4 nm) reported to date in top-gated GFETs. This yields high performance GFETs with the intrinsic transconductance parameter approaching 2.4 mS and the field-effect mobility ˜3000 cm^2/Vs. We also demonstrate generalization of this molecular layer seeded-ALD growth method to higher- κ gate dielectrics, yielding further enhanced GFET transconductance for possible application to radio-frequency circuits.

  15. Growth, structural, dielectric and magnetic properties of epitaxial multiferroic NaMnF3 thin films

    NASA Astrophysics Data System (ADS)

    Kc, Amit; Borisov, Pavel; Lederman, David

    Epitaxial NaMnF3 thin films were grown on SrTiO3 (100) single crystal substrates via molecular beam epitaxy (MBE). The orthorhombically distorted perovskite fluoride NaMnF3 (Pnma space group) has been predicted to have a polar instability at low temperatures due to MnF6 octahedral tilts. Structural, magnetic and dielectric properties were studied. Thin film structural quality as a function of the substrate temperature and film thickness was investigated using X-ray diffraction (XRD), in-situ reflection high-energy electron diffraction (RHEED), and atomic force microscopy (AFM). The best films were smooth and single phase grown with four different twin domains. Magnetic characterization was performed using superconducting quantum interference device (SQUID) magnetometry. In-plane magnetization measurements revealed antiferromagnetic ordering with a Neel temperature TN = 66 K. For the dielectric studies, NaMnF3 films were grown on top of SrRuO3 (100) buffer layers grown via pulsed laser deposition that were used as bottom electrodes. Dielectric spectroscopy was performed at different temperatures between 11K and room temperature in a frequency range 100 Hz to 100 kHz. Significant temperature dependent dielectric properties were observed. This work was supported by the National Science Foundation.

  16. Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

    PubMed

    Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

    2016-07-11

    The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest. PMID:27410799

  17. Dielectric anomaly in Li-doped zinc oxide thin films grown by sol gel route

    NASA Astrophysics Data System (ADS)

    Dhananjay; Singh, Satyendra; Nagaraju, J.; Krupanidhi, S. B.

    2007-08-01

    Sol gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400 500 °C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (Ps) and coercive field were 0.15 μC/cm2 and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

  18. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

    2013-12-15

    Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  19. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  20. Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films

    SciTech Connect

    Kim, Joo Han; Holloway, Paul H.

    2004-09-06

    Strong near-infrared (NIR) electroluminescence (EL) at room temperature from neodymium (Nd)-doped gallium nitride (GaN) thin films is reported. The Nd-doped GaN films were grown by radio-frequency planar magnetron cosputtering of separate GaN and metallic Nd targets in a pure nitrogen ambient. X-ray diffraction data did not identify the presence of any secondary phases and revealed that the Nd-doped GaN films had a highly textured wurtzite crystal structure with the c-axis normal to the surface of the film. The EL devices were fabricated with a thin-film multilayered structure of Al/Nd-doped GaN/Al{sub 2}O{sub 3}-TiO{sub 2}/indium-tin oxide and tested at room temperate. Three distinct NIR EL emission peaks were observed from the devices at 905, 1082, and 1364 nm, arising from the radiative relaxation of the {sup 4}F{sub 3sol2} excited-state energy level to the {sup 4}I{sub 9sol2}, {sup 4}I{sub 11sol2}, and {sup 4}I{sub 13sol2} levels of the Nd{sup 3+} ion, respectively. The threshold voltage for all the three emission peaks was {approx}150 V. The external power efficiency of the fabricated EL devices was {approx}1x10{sup -5} measured at 40 V above the threshold voltage.

  1. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    SciTech Connect

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  2. Atomic-Resolution Observations of Semi-Crystalline IntegranularThin Films in Silicon Nitride

    SciTech Connect

    Ziegler, Alexander; Idrobo, Juan C.; Cinibulk, Michael K.; Kisielowski, Christian; Browning, Nigel D.; Ritchie, Robert O.

    2005-08-01

    The thin intergranular phase in a silicon nitride (Si3N4)ceramic, which has been regarded for decades as having an entirely amorphous morphology, is shown to have a semi-crystalline structure. Using two different but complementary high-resolution electron microscopy methods, the intergranular atomic structure was directly imaged at the atomic level. These high-resolution images show that the atomic arrangement of the dopand element cerium takes very periodic positions not only along the interface between the intergranular phase and the Si3N4 matrix grains, but it arranges in a semi-crystalline structure that spans the entire width of the intergranular phase between two adjacent matrix grains, in principle connecting the two separate matrix grains. The result will have implications on the approach of understanding the materials properties of ceramics, most significantly on the mechanical properties and the associated computational modeling of the atomic structure of the thin intergranular phase in Si3N4 ceramics.

  3. The effects of rare earth doping on gallium nitride thin films

    NASA Astrophysics Data System (ADS)

    McHale, Stephen R.

    The thermal neutron capture cross section of the rare earth (RE) metal isotope Gd-157 is the largest of all known natural elements, which distinguishes the material as a logical candidate for neutron detection. To address an incomplete understanding of rare earth doped Gallium Nitride (GaN) materials, investigations of the surface electronic structure and interface properties of GaN thin films doped with rare earths (Yb, Er, Gd) were undertaken. Lattice ion occupation, bonding, rare earth 4f occupation, and gold Schottky barrier formation were examined using synchrotron photoemission spectroscopy. Measured Debye temperatures indicate substitutional occupation of Ga sites by RE ions. The occupied RE 4f levels, deep within the valence band, suggest that intra-atomic f-f transitions may be more 'blue' than predicted by theoretical models. Thin layers of gold did not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. The resultant Schottky barrier heights for GaN:Yb, GaN:Er, and GaN:Gd, are 25--55% larger than those reported at the gold to undoped GaN interface. The utility of gadolinium as a neutron detection material was examined via fundamental nuclear and semiconductor physics. Low charge production and the large range of internal conversion electrons limits charge collection efficiency.

  4. Thin-walled boron nitride microtubes exhibiting intense band-edge UV emission at room temperature.

    PubMed

    Huang, Yang; Bando, Yoshio; Tang, Chengchun; Zhi, Chunyi; Terao, Takeshi; Dierre, Benjamin; Sekiguchi, Takashi; Golberg, Dmitri

    2009-02-25

    Boron nitride (BN) microtubes were synthesized in a vertical induction furnace using Li(2)CO(3) and B reactants. Their structures and morphologies were investigated using x-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The microtubes have diameters of 1-3 microm, lengths of up to hundreds of micrometers, and well-structured ultrathin walls only approximately 50 nm thick. A mechanism combining the vapor-liquid-solid (VLS) and template self-sacrificing processes is proposed to explain the formation of these novel one-dimensional microstructures, in which the Li(2)O-B(2)O(3) eutectic reaction plays an important role. Cathodoluminescence studies show that even at room temperature the thin-walled BN microtubes can possess an intense band-edge emission at approximately 216.5 nm, which is distinct compared with other BN nanostructures. The study suggests that the thin-walled BN microtubes should be promising for constructing compact deep UV devices and find potential applications in microreactors and microfluidic and drug delivery systems. PMID:19417466

  5. High frequency scattering from a thin lossless dielectric slab. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Burgener, K. W.

    1979-01-01

    A solution for scattering from a thin dielectric slab is developed based on geometrical optics and the geometrical theory of diffraction with the intention of developing a model for a windshield of a small private aircraft for incorporation in an aircraft antenna code. Results of the theory are compared with experimental measurements and moment method calculations showing good agreement. Application of the solution is also addressed.

  6. Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

    NASA Astrophysics Data System (ADS)

    Carta, Fabio; Gates, Stephen M.; Limanov, Alexander B.; Hlaing, Htay; Im, James S.; Edelstein, Daniel C.; Kymissis, Ioannis

    2014-12-01

    We present the excimer laser crystallization of amorphous silicon on a low dielectric constant (low-k) insulator for very large scale integration monolithic 3D integration and demonstrate that low dielectric constant materials are suitable substrates for 3D integration through laser crystallization of silicon thin films. We crystallized 100 nm amorphous silicon on top of SiO2 and SiCOH (low-k) dielectrics, at different material thicknesses (1 μm, 0.75 μm, and 0.5 μm). The amorphous silicon crystallization on low-k dielectric requires 35% less laser energy than on an SiO2 dielectric. This difference is related to the thermal conductivity of the two materials, in agreement with one dimensional simulations of the crystallization process. We analyzed the morphology of the material through defect-enhanced microscopy, Raman spectroscopy, and X-ray diffraction analysis. SEM micrographs show that polycrystalline silicon is characterized by micron-long grains with an average width of 543 nm for the SiO2 sample and 570 nm for the low-k samples. Comparison of the Raman spectra does not show any major difference in film quality for the two different dielectrics, and polycrystalline silicon peaks are closely placed around 517 cm-1. From X-ray diffraction analysis, the material crystallized on SiO2 shows a preferential (111) crystal orientation. In the SiCOH case, the 111 peak strength decreases dramatically and samples do not show preferential crystal orientation. A 1D finite element method simulation of the crystallization process on a back end of line structure shows that copper (Cu) damascene interconnects reach a temperature of 70 °C or lower with a 0.5 μm dielectric layer between the Cu and the molten Si layer, a favorable condition for monolithic 3D integration.

  7. The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tumarkin, A. V.; Razumov, S. V.; Gagarin, A. G.; Altynnikov, A. G.; Stozharov, V. M.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-02-01

    Submicron thin layers of BaZr x Ti1- x O3 are grown in-situ by RF magnetron sputtering of a ceramic target ( x = 0.50) on a substrate of Pt/ r-cut leucosapphire Al2O3. It is shown that the composition of the ferroelectric layer is not identical to the composition of the sputtered target and is shifted toward barium zirconate. The reasons for such behavior are discussed. The obtained samples are characterized by high breakdown voltages (1 MV/cm and higher). The structural and high-frequency dielectric properties are studied, and high tunability of the capacitance of thin layers is revealed.

  8. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    NASA Astrophysics Data System (ADS)

    Tsai, Meng-Chen; Lee, Min-Hung; Kuo, Chin-Lung; Lin, Hsin-Chih; Chen, Miin-Jang

    2016-11-01

    Amorphous and crystalline ZrO2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (Jg) of ∼7 × 10-4 A/cm2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiOxNy in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar Jg of ∼1.4 × 10-5 A/cm2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO2 is an effective approach to scale the CET and Jg, as well as to improve the reliability.

  9. Optical properties of dielectric thin films including quantum dots

    NASA Astrophysics Data System (ADS)

    Flory, F.; Chen, Y. J.; Lee, C. C.; Escoubas, L.; Simon, J. J.; Torchio, P.; Le Rouzo, J.; Vedraine, S.; Derbal-Habak, Hassina; Ackermann, Jorg; Shupyk, Ivan; Didane, Yahia

    2010-08-01

    Depending on the minimum size of their micro/nano structure, thin films can exhibit very different behaviors and optical properties. From optical waveguides down to artificial anisotropy, through diffractive optics and photonic crystals, the application changes when decreasing the minimum feature size. Rigorous electromagnetic theory can be used to model most of the components but when the size is of a few nanometers, quantum theory has also to be used. These materials including quantum structures are of particular interest for other applications, in particular for solar cells, because of their luminescent and electronic properties. We show that the properties of electrons in multiple quantum wells can be easily modeled with a formalism similar to that used for multilayer waveguides. The effects of different parameters, in particular coupling between wells and well thickness dispersion, on possible discrete energy levels or energy band of electrons and on electron wave functions is given. When such quantum confinement appears the spectral absorption and the extinction coefficient dispersion with wavelength is modified. The dispersion of the real part of the refractive index can then be deduced from the Kramers- Krönig relations. Associated with homogenization theory this approach gives a new model of refractive index for thin films including quantum dots. Absorption spectra of samples composed of ZnO quantum dots in PMMA layers are in preparation are given.

  10. Development of CrN precipitates during the initial stages of PIII nitriding of stainless steel thin films

    NASA Astrophysics Data System (ADS)

    Manova, D.; Höche, T.; Mändl, S.; Neumann, H.

    2009-05-01

    Stainless steel thin films produced by ion beam sputtering (IBS) were used as a model system to investigate the nitrogen diffusion and CrN formation after 10 min of nitrogen plasma immersion ion implantation (PIII) at 350 °C and 450 °C. At 350 °C, a thin nitrided layer of 70 nm is formed, with additional diffusion of nitrogen along grain boundaries and the growth of CrN precipitates along these grain boundaries. For 450 °C, a complete nitriding of the whole 400 nm thick layer was observed, with the lower 75 nm consisting of an expanded phase and the upper 330 nm of a decomposed phase with CrN precipitates formed inside the original grains. Such a layered structure capturing the transformation process has not been observed before. A determination of time-temperature dependencies of this process and the transfer of these results for bulk material should be possible.

  11. Effect of hydrogen addition on the deposition of titanium nitride thin films in nitrogen added argon magnetron plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Bhuyan, H.; Diaz-Droguett, D. E.; Guzman, F.; Mändl, S.; Saikia, B. K.; Favre, M.; Maze, J. R.; Wyndham, E.

    2016-06-01

    The properties and performance of thin films deposited by plasma assisted processes are closely related to their manufacturing techniques and processes. The objective of the current study is to investigate the modification of plasma parameters occurring during hydrogen addition in N2  +  Ar magnetron plasma used for titanium nitride thin film deposition, and to correlate the measured properties of the deposited thin film with the bulk plasma parameters of the magnetron discharge. From the Langmuir probe measurements, it was observed that the addition of hydrogen led to a decrease of electron density from 8.6 to 6.2  ×  (1014 m‑3) and a corresponding increase of electron temperature from 6.30 to 6.74 eV. The optical emission spectroscopy study reveals that with addition of hydrogen, the density of argon ions decreases. The various positive ion species involving hydrogen are found to increase with increase of hydrogen partial pressure in the chamber. The thin films deposited were characterized using standard surface diagnostic tools such as x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), x-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). Although it was possible to deposit thin films of titanium nitride with hydrogen addition in nitrogen added argon magnetron plasma, the quality of the thin films deteriorates with higher hydrogen partial pressures.

  12. Thin dielectric film thickness determination by advanced transmission electron microscopy

    SciTech Connect

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  13. Optically activated sub-millimeter dielectric relaxation in amorphous thin film silicon at room temperature

    SciTech Connect

    Rahman, Rezwanur; Ohno, Tim R.; Taylor, P. C.; Scales, John A.

    2014-05-05

    Knowing the frequency-dependent photo-induced complex conductivity of thin films is useful in the design of photovoltaics and other semi-conductor devices. For example, annealing in the far-infrared could in principle be tailored to the specific dielectric properties of a particular sample. The frequency dependence of the conductivity (whether dark or photo-induced) also gives insight into the effective dimensionality of thin films (via the phonon density of states) as well as the presence (or absence) of free carriers, dopants, defects, etc. Ultimately, our goal is to make low-noise, phase-sensitive room temperature measurements of the frequency-dependent conductivity of thin films from microwave frequencies into the far-infrared; covering, the frequency range from ionic and dipole relaxation to atomic and electronic processes. To this end, we have developed a high-Q (quality factor) open cavity resonator capable of resolving the complex conductivity of sub-micron films in the range of 100–350 GHz (0.1–0.35 THz, or 0.4–1 meV). In this paper, we use a low-power green laser to excite bound charges in high-resistivity amorphous silicon thin film. Even at room temperature, we can resolve both the dark conductivity and photo-induced changes associated with dielectric relaxation and possibly some small portion of free carriers.

  14. The jump-into-contact effect in biased AFM probes on dielectric films and its application to quantify the dielectric permittivity of thin layers.

    PubMed

    Revilla, Reynier I

    2016-07-01

    The jump-into-contact (JIC) phenomenon in biased atomic force microscopy (AFM) probes on dielectric films is studied. The influence of the film thickness on the position at which the AFM tip collapses irreversibly into the sample surface was theoretically analyzed using a widely accepted analytical expression of the probe-sample electrostatic interaction force. It was demonstrated that for relatively high values of voltage (V > 10-20 V) applied between the probe and the substrate the cantilever deflection at the JIC is independent of the dielectric film thickness for thin-ultrathin layers (h < 10-50 nm). Under the same conditions the z-piezo distance at the JIC follows approximately a linear behavior with the film thickness. Based on this effect an empirical model was formulated to estimate the dielectric permittivity of thin/ultrathin dielectric films using the jump-into-contact distance. The procedure was successfully applied on thin PVD-SiO2 films, obtaining good agreement with a dielectric constant value previously reported for the same material. PMID:27199351

  15. Local epitaxial growth of aluminum nitride and molybdenum thin films in fiber texture using aluminum nitride interlayer

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2006-08-14

    The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystal symmetries. The local heteroepitaxial relationship is (0001)AlN[2110](parallel sign)(110)Mo[111](parallel sign)(0001)AlN[2110]. The AlN films changes from nonequiaxed microstructures to equiaxed columnar structures. The authors think that the AlN interlayer is effective in decreasing the crystallization energy of the Mo electrode due to the coherent heteroepitaxial nucleation. It is interesting that the local heteroepitaxial relationship does not satisfy the criteria for heteroepitaxial growth.

  16. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Li, F.; Chen, L.-Q.; Schlom, D. G.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-03-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  17. Zirconium doped TiO2 thin films: A promising dielectric layer

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    In the present work, we have fabricated the zirconium doped TiO2 thin (ZTO) films from a facile spin - coating method. The addition of Zirconium in TiO2 offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO2 thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ˜10-8 A/cm2. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

  18. Investigation of structural, optical, electrical and dielectric properties of catalytic sprayed hausmannite thin film

    SciTech Connect

    Larbi, T.; Ouni, B.; Boukhachem, A.; Boubaker, K. Amlouk, M.

    2014-12-15

    Hausmannite Mn{sub 3}O{sub 4} thin film have been synthesized using spray pyrolysis method. These films are characterized using X-ray diffraction (XRD), atomic force microscope AFM, UV–vis–NIR spectroscopy and impedance spectroscopy. XRD study confirms the tetragonal structure of the as-deposited films with lattice parameters, a = 5.1822 Å and c = 9.4563 Å and a grain size of about 56 nm. UV–vis–NIR spectroscopy was further used to estimate optical constants such as extinction coefficient, refractive index, band gap and Urbach energy. Moreover, impedance spectroscopy analysis was employed to estimate electrical and dielectrical properties of the sprayed thin films. The activation energy values deduced from DC conductivity and relaxation frequency were almost the same, revealing that the transport phenomena is thermally activated by hopping between localized states. The AC conductivity is found to be proportional to ω{sup s}. The temperature dependence of the AC conductivity and the frequency exponent, s was reasonably well interpreted in terms of the correlated barrier-hopping CBH model. The dielectric properties were sensitive to temperature and frequency. The study of the electrical modulus indicated that the charge carrier was localized. Experimental results concerning optical constants as Urbach energy, dielectric constant, electric modulus and AC and DC conductivity were discussed in terms of the hopping model as suggested by Elliott.

  19. Enhancement of near-field radiative heat transfer using polar dielectric thin films.

    PubMed

    Song, Bai; Ganjeh, Yashar; Sadat, Seid; Thompson, Dakotah; Fiorino, Anthony; Fernández-Hurtado, Víctor; Feist, Johannes; Garcia-Vidal, Francisco J; Cuevas, Juan Carlos; Reddy, Pramod; Meyhofer, Edgar

    2015-03-01

    Thermal radiative emission from a hot surface to a cold surface plays an important role in many applications, including energy conversion, thermal management, lithography, data storage and thermal microscopy. Recent studies on bulk materials have confirmed long-standing theoretical predictions indicating that when the gap between the surfaces is reduced to tens of nanometres, well below the peak wavelength of the blackbody emission spectrum, the radiative heat flux increases by orders of magnitude. However, despite recent attempts, whether such enhancements can be obtained in nanoscale dielectric films thinner than the penetration depth of thermal radiation, as suggested by theory, remains experimentally unknown. Here, using an experimental platform that comprises a heat-flow calorimeter with a resolution of about 100 pW (ref. 7), we experimentally demonstrate a dramatic increase in near-field radiative heat transfer, comparable to that obtained between bulk materials, even for very thin dielectric films (50-100 nm) when the spatial separation between the hot and cold surfaces is comparable to the film thickness. We explain these results by analysing the spectral characteristics and mode shapes of surface phonon polaritons, which dominate near-field radiative heat transport in polar dielectric thin films. PMID:25705866

  20. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

    2015-11-01

    The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  1. Femtosecond-laser ablation dynamics of dielectrics: basics and applications for thin films.

    PubMed

    Balling, P; Schou, J

    2013-03-01

    Laser ablation of dielectrics by ultrashort laser pulses is reviewed. The basic interaction between ultrashort light pulses and the dielectric material is described, and different approaches to the modeling of the femtosecond ablation dynamics are reviewed. Material excitation by ultrashort laser pulses is induced by a combination of strong-field excitation (multi-photon and tunnel excitation), collisional excitation (potentially leading to an avalanche process), and absorption in the plasma consisting of the electrons excited to the conduction band. It is discussed how these excitation processes can be described by various rate-equation models in combination with different descriptions of the excited electrons. The optical properties of the highly excited dielectric undergo a rapid change during the laser pulse, which must be included in a detailed modeling of the excitations. The material ejected from the dielectric following the femtosecond-laser excitation can potentially be used for thin-film deposition. The deposition rate is typically much smaller than that for nanosecond lasers, but film production by femtosecond lasers does possess several attractive features. First, the strong-field excitation makes it possible to produce films of materials that are transparent to the laser light. Second, the highly localized excitation reduces the emission of larger material particulates. Third, lasers with ultrashort pulses are shown to be particularly useful tools for the production of nanocluster films. The important question of the film stoichiometry relative to that of the target will be thoroughly discussed in relation to the films reported in the literature. PMID:23439493

  2. Temperature Dependence of Dielectric and Ferroelectric Properties of BiFeO3 Thin Films

    SciTech Connect

    Biegalski, Michael D; Jang, J H; Bark, C; Eom, Professor Chang-Beom

    2009-01-01

    Multiferroic materials, with their potential for novel devices and sensors, have spurred an immense amount of research. The most concentrated effort has been on BiFeO3 thin films due to their high N el temperature and high ferroelectric transition temperature. Most studies on BiFeO3 films suffer from electrical leakage, requiring the measurement of dielectric or ferroelectric properties to be conducted at low temperatures. In this work we show that room-temperature leakage is not intrinsic to BiFeO3. Results are shown for highly insulating films, including the temperature dependence (10K to 300K) of the dielectric properties, ferroelectric P-E loops, and leakage current. This data shows very little temperature change in the dielectric constant with a TCC of 0.38 K-1, and dielectric losses below 0.005. The remanent polarization similarly showed no temperature dependence within the error of the measurement with a Pr of 67 1 C/cm2. The leakage current remains below 3x10-4(A/cm2) at 100 kV/cm. This work proves that BiFeO3 does not intrinsically have high leakage, and validates the extrapolation of the properties of BiFeO3 films measured at low temperatures to room temperatures.

  3. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    SciTech Connect

    Esro, M.; Adamopoulos, G.; Mazzocco, R.; Kolosov, O.; Krier, A.; Vourlias, G.; Milne, W. I.

    2015-05-18

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

  4. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    NASA Astrophysics Data System (ADS)

    Esro, M.; Mazzocco, R.; Vourlias, G.; Kolosov, O.; Krier, A.; Milne, W. I.; Adamopoulos, G.

    2015-05-01

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (LaxAl1-xOy) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the LaxAl1-xOy films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlOy dielectrics exhibit a wide band gap (˜6.18 eV), high dielectric constant (k ˜ 16), low roughness (˜1.9 nm), and very low leakage currents (<3 nA/cm2). TFTs employing solution processed LaAlOy gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (˜10 V), high on/off current modulation ratio of >106, subthreshold swing of ˜650 mV dec-1, and electron mobility of ˜12 cm2 V-1 s-1.

  5. Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

    NASA Astrophysics Data System (ADS)

    Valour, Arnaud; Cheviré, François; Tessier, Franck; Grasset, Fabien; Dierre, Benjamin; Jiang, Tengfei; Faulques, Eric; Cario, Laurent; Jobic, Stéphane

    2016-04-01

    Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO2 substrate from a ZnO colloidal solution. Zinc peroxide (ZnO2) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H2O2 solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV-Visible transmittance spectroscopy.

  6. Semiconducting properties of zinc-doped cubic boron nitride thin films

    SciTech Connect

    Nose, K.; Yoshida, T.

    2007-09-15

    We have examined the electronic properties of zinc-doped cubic boron nitride (cBN) thin films prepared by sputter deposition. The electric conductivity of films deposited in pure Ar increased as the concentration of zinc dopant increased, and hole conduction was identified by the measurement of thermoelectric currents. It was also found that the conductivity increment in such films was accompanied by a linear increase in the B/(B+N) ratio. At the same time, no modification of the composition and the conductivity by incorporated zinc was observed when film growth took place in presence of nitrogen gas. The effect of the excess boron on the conductivity emerged only when films show semi-insulating behavior. These results suggest that Zn substitution for nitrogen causes high electric conductivity of cBN. The electric contact between Ti electrode and semiconducting cBN was examined by the transfer length method, and Ohmic conduction was observed in the Ti/cBN contact. The specific contact resistance was affected by the specific resistance of cBN films, and it was reduced from 10{sup 5} to 100 {omega} cm{sup 2} by increasing the concentration of incorporated Zn.

  7. Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

    SciTech Connect

    Akiyama, Morito; Nagase, Toshimi; Umeda, Keiichi; Honda, Atsushi

    2013-01-14

    The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc{sub 0.41}Al{sub 0.59}N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc{sub 0.41}Al{sub 0.59}N film is higher than those of lead zirconate titanate and Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc{sub 0.41}Al{sub 0.59}N film is due to the high d{sub 31} and the low relative permittivity.

  8. Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire

    NASA Astrophysics Data System (ADS)

    Douglass, K.; Hunt, S.; Teplyakov, A.; Opila, R. L.

    2010-12-01

    Surface preparation procedures for indium gallium nitride (InGaN) thin films were analyzed for their effectiveness for carbon and oxide removal as well as for the resulting surface roughness. Aqua regia (3:1 mixture of concentrated hydrochloric acid and concentrated nitric acid, AR), hydrofluoric acid (HF), hydrochloric acid (HCl), piranha solution (1:1 mixture of sulfuric acid and 30% H 2O 2) and 1:9 ammonium sulfide:tert-butanol were all used along with high temperature anneals to remove surface contamination. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were utilized to study the extent of surface contamination and surface roughness, respectively. The ammonium sulfide treatment provided the best overall removal of oxygen and carbon. Annealing over 700 °C after a treatment showed an even further improvement in surface contamination removal. The piranha treatment resulted in the lowest residual carbon, while the ammonium sulfide treatment leads to the lowest residual oxygen. AFM data showed that all the treatments decreased the surface roughness (with respect to as-grown specimens) with HCl, HF, (NH 4) 2S and RCA procedures giving the best RMS values (˜0.5-0.8 nm).

  9. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride

    NASA Astrophysics Data System (ADS)

    Simmendinger, Julian; Pracht, Uwe S.; Daschke, Lena; Proslier, Thomas; Klug, Jeffrey A.; Dressel, Martin; Scheffler, Marc

    2016-08-01

    We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K ≥Tc≥2.78 K . Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm-1 (0.1 to 1.1 THz). The superconducting energy scales, i.e., the critical temperature Tc, the pairing energy Δ , and the superfluid stiffness J , and the superfluid density ns can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.

  10. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  11. Process condition dependence of mechanical and physical properties of silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Walmsley, B. A.; Keating, A. J.; Liu, Y.; Hu, X. Z.; Bush, M. B.; Dell, J. M.; Faraone, L.

    2007-11-01

    This study uses a resonance method to determine Young's modulus (E), shear modulus (G), and Poisson's ratio (ν) of plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films deposited under varying process conditions. The resonance method involves exciting the bending and torsional vibration modes of a microcantilever beam fabricated from a film. The E and G values can be extracted directly from the bending and torsional vibration modes, and the ν value can be determined from the calculated E and G values. The density (ρ) of the films was determined using a quartz crystal microbalance method. In order to determine the validity of the resonance method, finite element modeling was used to determine its dependence on microcantilever beam dimensions. Over a deposition temperature range of 100-300°C, measured E, G, and ν values varied within 54-193GPa, 22-77GPa, and 0.20-0.26 with changes in process conditions, respectively. Over the same deposition range, measured ρ values varied within 1.55-2.80g/cm3 with changes in process conditions.

  12. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1988-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  13. Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

    1989-01-01

    The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

  14. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-07-01

    Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using µ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  15. Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering

    SciTech Connect

    Deniz, D.; Harper, J. M. E.

    2008-09-15

    We studied the development of crystallographic texture in titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature. Texture measurements were performed by x-ray pole figure analysis of the (111) and (200) diffraction peaks. For a deposition angle of 40 deg. from substrate normal, we obtained TiN biaxial textures for a range of deposition conditions using radio frequency (rf) sputtering. Typically, we find that the <111> orientation is close to the substrate normal and the <100> orientation is close to the direction of the deposition source, showing substantial in-plane alignment. We also introduced a 150 eV ion beam at 55 deg. with respect to substrate normal during rf sputtering of TiN. Ion beam enhancement caused TiN to align its out-of-plane texture along <100> orientation. In this case, (200) planes are slightly tilted with respect to the substrate normal away from the ion beam source, and (111) planes are tilted 50 deg. toward the ion beam source. For comparison, we found that HfN deposited at 40 deg. without ion bombardment has a strong <100> orientation parallel to the substrate normal. These results are consistent with momentum transfer among adatoms and ions followed by an increase in surface diffusion of the adatoms on (200) surfaces. The type of fiber texture results from a competition among texture mechanisms related to surface mobilities of adatoms, geometrical, and directional effects.

  16. A non-resonant dielectric metamaterial for the enhancement of thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Omelyanovich, M.; Ovchinnikov, V.; Simovski, C.

    2015-02-01

    Recently, we have suggested a dielectric metamaterial composed of an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our previous theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  17. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    SciTech Connect

    Artemenko, A.; Payan, S.; Rousseau, A.; Arveux, E.; Maglione, M.; Levasseur, D.; Guegan, G.

    2013-04-15

    We report a dielectric relaxation in BaTiO{sub 3}-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K) for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR) investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti{sup 3+}-V(O) charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  18. Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

    PubMed Central

    Christiansen, Alexander B.; Caringal, Gideon P.; Clausen, Jeppe S.; Grajower, Meir; Taha, Hesham; Levy, Uriel; Asger Mortensen, N.; Kristensen, Anders

    2015-01-01

    Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial frequency in the range 5–7 μm−1. A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications for decoration and displays are discussed. PMID:26035526

  19. Development of dielectric barrier discharge plasma processing apparatus for mass spectrometry and thin film deposition.

    PubMed

    Majumdar, Abhijit; Hippler, Rainer

    2007-07-01

    Cost effective and a very simple dielectric barrier discharge plasma processing apparatus for thin film deposition and mass spectroscopic analysis of organic gas mixture has been described. The interesting features of the apparatus are the construction of the dielectric electrodes made of aluminum oxide or alumina (Al(2)O(3)) and glass and the generation of high ignition voltage from the spark plug transformer taken from car. Metal capacitor is introduced in between ground and oscilloscope to measure the executing power during the discharge and the average electron density in the plasma region. The organic polymer films have been deposited on Si (100) substrate using several organic gas compositions. The experimental setup provides a unique drainage system from the reaction chamber controlled by a membrane pump to suck out and remove the poisonous gases or residuals (cyanogens, H-CN, CH(x)NH(2), etc.) which have been produced during the discharge of CH(4)N(2) mixture. PMID:17672789

  20. Synthesis and characterization of wear-resistant boron-carbon-nitride thin films

    NASA Astrophysics Data System (ADS)

    Guruz, Murat Unal

    2001-12-01

    In this thesis research, synthesis and characterization of a number of technologically and scientifically interesting B-C-N thin films was investigated. These solids, owing to their short and strong covalent bonds, have the potential to be very hard. Magnetron sputtering was utilized for film deposition and the films were characterization by a wide variety of techniques to obtain information on hardness, microstructure, composition, surface morphology, corrosion performance, and wear rate. Ultrathin carbon nitride coatings were grown for use as protective overcoats in computer hard drives. In order to obtain an areal storage density of 100 Gbits/in2, the overcoat thickness is required to be within 2 nm, and the coating needs to be wear-resistant, smooth and defect-free. These requirements were satisfied for films grown under an optimum substrate bias where the energy distribution of the incoming ions was minimized and the substrate and target power supplies were pulsed at high frequency. Synthesis of cubic boron nitride coatings was possible in films grown under intense ion bombardment, where the ion flux was controlled by an externally applied magnetic field. These films were prone to rapid delamination, especially in humid environments. Films grown under mild bombardment had the hexagonal structure, did not exhibit any tendency for delamination, and were relatively hard, with smooth surface morphology and were highly resistive. In order to obtain thick and adherent c-BN films, deposition of multilayer BN coatings was proposed. This was accomplished by varying the substrate bias as well as the incoming ion flux, however, no significant improvement in film adhesion was observed. As an alternative to c-BN growth, deposition of boron carbide films was investigated. Such films exhibited high hardness, low surface roughness, along with high elasticity, and high wear resistance and did not show any signs of delamination under optimum growth conditions. The required

  1. Surface-sensitive UHV dielectric studies of nanoscale organic thin films: Adsorption, crystallization, and sublimation

    NASA Astrophysics Data System (ADS)

    Underwood, Jason M.

    Nanoscale systems are small collections of atoms or molecules, which as a result of their limited extent, show measurable thermodynamic deviations from bulk samples of the same species. The deviations may result from purely finite-size effects, or may be due to an increased significance of the interaction between the nanoscale system and its container. Ultra-thin (<100 nm) films of organic molecules adsorbed on surfaces afford unique opportunities to study the interplay of forces relevant to nanoscale physics. This thesis describes the development of a novel ultra-high vacuum apparatus to study the behavior of adsorbed polar molecules via dielectric spectroscopy (UHV-DS). Ultra-thin films are grown and characterized in-situ. The use of interdigitated electrode capacitors and a ratio-transformer bridge technique yields resolutions of ˜1 aF and ˜10-5 ppm in the capacitance and loss tangent, respectively. Typical sensitivity is 10 aF per monolayer at 80 K. Results are given for studies on water, methanol, and Cp* (a synthetic molecular rotor). The desorption event in the dielectric spectra is correlated with thermal desorption spectroscopy. During growth of methanol films, we observe partial crystallization for temperatures above ≳ 100 K. Crystallization is also observed upon heating glassy films grown at 80 K. Finally, we discuss UHV-DS as a probe for solid thin-film vapor pressure measurements, and show that our data on methanol compare favorably with those in the literature.

  2. Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

    NASA Astrophysics Data System (ADS)

    Chan, Mei Yin; Komatsu, Katsuyoshi; Li, Song-Lin; Xu, Yong; Darmawan, Peter; Kuramochi, Hiromi; Nakaharai, Shu; Aparecido-Ferreira, Alex; Watanabe, Kenji; Taniguchi, Takashi; Tsukagoshi, Kazuhito

    2013-09-01

    We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03220e

  3. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Broas, M.; Liu, X.; Ge, Y.; Mattila, T. T.; Paulasto-Kröckel, M.

    2015-06-01

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiNx thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiNx part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiNx. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ˜100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  4. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    SciTech Connect

    Broas, M. Mattila, T. T.; Paulasto-Kröckel, M.; Liu, X.; Ge, Y.

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  5. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  6. Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells.

    PubMed

    Isabella, Olindo; Vismara, Robin; Ingenito, Andrea; Rezaei, Nasim; Zeman, M

    2016-03-21

    The optical analysis of optically-textured and electrically-flat ultra-thin crystalline silicon (c-Si) slabs is presented. These slabs were endowed with decoupled front titanium-dioxide (TiO2) / back silicon-dioxide (SiO2) dielectric textures and were studied as function of two types of back reflectors: standard silver (Ag) and dielectric modulated distributed Bragg reflector (MDBR). The optical performance of such systems was compared to that of state-of-the-art flat c-Si slabs endowed with so-called front Mie resonators and to those of similar optical systems still endowed with the same back reflectors and decoupled front/back texturing but based on textured c-Si and dielectric coatings (front TiO2 and back SiO2). Our optimized front dielectric textured design on 2-µm thick flat c-Si slab with MDBR resulted in more photo-generated current density in c-Si with respect to the same optical system but featuring state-of-the-art Mie resonators ( + 6.4%), mainly due to an improved light in-coupling between 400 and 700 nm and light scattering between 700 and 1050 nm. On the other hand, the adoption of textured dielectric layers resulted in less photo-generated current density in c-Si up to -20.6% with respect to textured c-Si, depending on the type of back reflector taken into account. PMID:27136888

  7. An electrode-free method of characterizing the microwave dielectric properties of high-permittivity thin films

    NASA Astrophysics Data System (ADS)

    Bovtun, V.; Pashkov, V.; Kempa, M.; Kamba, S.; Eremenko, A.; Molchanov, V.; Poplavko, Y.; Yakymenko, Y.; Lee, J. H.; Schlom, D. G.

    2011-01-01

    A thin dielectric resonator consisting of a dielectric substrate and the thin film deposited upon it is shown to suffice for microwave characterization and dielectric parameter measurement of high-permittivity thin films without electrodes. The TE01δ resonance mode was excited and measured in thin (down to 0.1 mm) rectangular- or disk-shaped low-loss dielectric substrates (D ˜10 mm) with permittivity ɛ'≥10 inserted into a cylindrical shielding cavity or rectangular waveguide. The in-plane dielectric permittivity and losses of alumina, DyScO3, SmScO3, and (LaAlO3)0.29(SrAl1/2Ta1/2O3)0.71 (LSAT) substrates were measured from 10 to 18 GHz. The substrate thickness optimal for characterization of the overlying thin film was determined as a function of the substrate permittivity. The high sensitivity and efficiency of the method, i.e., of a thin dielectric resonator to the dielectric parameters of an overlying film, was demonstrated by characterizing ultrathin strained EuTiO3 films. A 22 nm thick EuTiO3 film grown on a (100) LSAT substrate and strained in biaxial compression by 0.9% exhibited an increase in microwave permittivity at low temperatures consistent with it being an incipient ferroelectric; no strain-induced ferroelectric phase transition was seen. In contrast, a 100 nm thick EuTiO3 film grown on a (110) DyScO3 substrate and strained in biaxial tension by 1% showed two peaks as a function of temperature in microwave permittivity and loss. These peaks correspond to a strain-induced ferroelectric phase transition near 250 K and to domain wall motion.

  8. The jump-into-contact effect in biased AFM probes on dielectric films and its application to quantify the dielectric permittivity of thin layers

    NASA Astrophysics Data System (ADS)

    Revilla, Reynier I.

    2016-07-01

    The jump-into-contact (JIC) phenomenon in biased atomic force microscopy (AFM) probes on dielectric films is studied. The influence of the film thickness on the position at which the AFM tip collapses irreversibly into the sample surface was theoretically analyzed using a widely accepted analytical expression of the probe–sample electrostatic interaction force. It was demonstrated that for relatively high values of voltage (V > 10–20 V) applied between the probe and the substrate the cantilever deflection at the JIC is independent of the dielectric film thickness for thin–ultrathin layers (h < 10–50 nm). Under the same conditions the z–piezo distance at the JIC follows approximately a linear behavior with the film thickness. Based on this effect an empirical model was formulated to estimate the dielectric permittivity of thin/ultrathin dielectric films using the jump-into-contact distance. The procedure was successfully applied on thin PVD–SiO2 films, obtaining good agreement with a dielectric constant value previously reported for the same material.

  9. Dielectric loss peak due to platinum electrode porosity in lead zirconate titanate thin-film capacitors

    NASA Astrophysics Data System (ADS)

    Jung, D. J.; Dawber, M.; Ruediger, A.; Scott, J. F.; Kim, H. H.; Kim, Kinam

    2002-09-01

    Impedance spectroscopy measurements were carried out in situ on lead zirconate titanate capacitors 1.2×1.2 μm2 in size on a Samsung 4 Mbit 6 in, wafer. We show here that large dielectric loss appears at low frequencies, which is a constriction effect due to the porosity of the platinum electrode. Porous platinum electrodes facilitate an oxygen electrode reaction. The effect may be removed by annealing the platinum electrode at moderate temperature (300 °C). Such an anneal should thus be considered an essential step in the fabrication of a ferroelectric thin-film capacitor on Pt.

  10. Thickness dependence of dielectric loss in SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Li, Hong-Cheng; Si, Weidong; West, Alexander D.; Xi, X. X.

    1998-07-01

    We have measured the dielectric loss in SrTiO3 thin films grown on SrRuO3 electrode layers with thickness ranging from 25 nm to 2.5 μm. The loss depends strongly on the thickness but differently above and below T≈80 K: as the thickness increases, the loss decreases at high temperatures but becomes higher at low temperatures. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dominates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important.

  11. Electromagnetic scattering and absorption by thin walled dielectric cylinders with application to ice crystals

    NASA Technical Reports Server (NTRS)

    Senior, T. B. A.; Weil, H.

    1977-01-01

    Important in the atmospheric heat balance are the reflection, transmission, and absorption of visible and infrared radiation by clouds and polluted atmospheres. Integral equations are derived to evaluate the scattering and absorption of electromagnetic radiation from thin cylindrical dielectric shells of arbitrary cross section when irradiated by a plane wave of any polarization incident in a plane perpendicular to the generators. Application of the method to infinitely long hexagonal cylinders has yielded numerical scattering and absorption data which simulate columnar sheath ice crystals. It is found that the numerical procedures are economical for cylinders having perimeters less than approximately fifteen free-space wavelengths.

  12. Temperature-dependent dielectric functions in atomically thin graphene, silicene, and arsenene

    SciTech Connect

    Yang, J. Y.; Liu, L. H.

    2015-08-31

    The dielectric functions of atomically thin graphene, silicene, and arsenene have been investigated as a function of temperature. With zero energy gap, more carriers in graphene and silicene are thermally excited as temperature increases and intraband transition strengthens, resulting in the strengthened absorption peak. Yet with large energy gap, interband transition dominates optical absorption of arsenene but it reduces as lattice vibration enhances, inducing the redshift and decreased absorption peak. To validate the theoretical method, the calculated optical constants of isolated graphene are compared with ellipsometry results and demonstrate good agreement.

  13. Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

    SciTech Connect

    Carta, Fabio Hlaing, Htay; Kymissis, Ioannis; Gates, Stephen M.; Edelstein, Daniel C.; Limanov, Alexander B.; Im, James S.

    2014-12-15

    We present the excimer laser crystallization of amorphous silicon on a low dielectric constant (low-k) insulator for very large scale integration monolithic 3D integration and demonstrate that low dielectric constant materials are suitable substrates for 3D integration through laser crystallization of silicon thin films. We crystallized 100 nm amorphous silicon on top of SiO{sub 2} and SiCOH (low-k) dielectrics, at different material thicknesses (1 μm, 0.75 μm, and 0.5 μm). The amorphous silicon crystallization on low-k dielectric requires 35% less laser energy than on an SiO{sub 2} dielectric. This difference is related to the thermal conductivity of the two materials, in agreement with one dimensional simulations of the crystallization process. We analyzed the morphology of the material through defect-enhanced microscopy, Raman spectroscopy, and X-ray diffraction analysis. SEM micrographs show that polycrystalline silicon is characterized by micron-long grains with an average width of 543 nm for the SiO{sub 2} sample and 570 nm for the low-k samples. Comparison of the Raman spectra does not show any major difference in film quality for the two different dielectrics, and polycrystalline silicon peaks are closely placed around 517 cm{sup −1}. From X-ray diffraction analysis, the material crystallized on SiO{sub 2} shows a preferential (111) crystal orientation. In the SiCOH case, the 111 peak strength decreases dramatically and samples do not show preferential crystal orientation. A 1D finite element method simulation of the crystallization process on a back end of line structure shows that copper (Cu) damascene interconnects reach a temperature of 70 °C or lower with a 0.5 μm dielectric layer between the Cu and the molten Si layer, a favorable condition for monolithic 3D integration.

  14. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    SciTech Connect

    Ha, Tae-Jun

    2014-07-28

    This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP{sup ®} (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  15. Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun

    2014-07-01

    This study presents a promising approach to realize low-voltage (<3 V) organic thin-film transistors (OTFTs) exhibiting improved electrical and optical stability. Such device performance results from the use of solution-processed hybrid bilayer gate dielectrics consisting of zirconium dioxide (high-k dielectric) and amorphous fluoropolymer, CYTOP® (low-k dielectric). Employing a very thin amorphous fluoropolymer film reduces interfacial defect-states by repelling water molecules and other aqueous chemicals from an organic semiconductor active layer due to the hydrophobic surface-property. The chemically clean interface, stemming from decrease in density of trap states improves all the key device properties such as field-effect mobility, threshold voltage, and sub-threshold swing. Furthermore, degradation by electrical bias-stress and photo-induced hysteresis were suppressed in OTFTs employing hybrid bilayer gate dielectrics.

  16. Microstructure and dielectric properties of pyrochlore Bi{sub 2}Ti{sub 2}O{sub 7} thin films

    SciTech Connect

    Cagnon, Joeel; Boesch, Damien S.; Finstrom, Nicholas H.; Nergiz, Saide Z.; Keane, Sean P.; Stemmer, Susanne

    2007-08-15

    Bi{sub 2}Ti{sub 2}O{sub 7} thin films were grown by radio-frequency magnetron sputtering on bare and Pt-coated sapphire substrates at low substrate temperatures ({approx}200 deg. C). Postdeposition anneals were carried out at different temperatures to crystallize the films. Nearly phase-pure Bi{sub 2}Ti{sub 2}O{sub 7} thin films with the cubic pyrochlore structure were obtained at annealing temperatures up to 800 deg. C. Impurity phases, in particular Bi{sub 4}Ti{sub 3}O{sub 12}, formed at higher temperatures. At 1 MHz, the dielectric constants were about 140-150 with a very small tunability and the dielectric loss was about 4x10{sup -3}. The dielectric loss increased with frequency. The dielectric properties of Bi{sub 2}Ti{sub 2}O{sub 7} films are compared to those of pyrochlore bismuth zinc niobate films.

  17. Structural and optical characterization of pure Si-rich nitride thin films.

    PubMed

    Debieu, Olivier; Nalini, Ramesh Pratibha; Cardin, Julien; Portier, Xavier; Perrière, Jacques; Gourbilleau, Fabrice

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase. PMID:23324447

  18. Structural and optical characterization of pure Si-rich nitride thin films

    PubMed Central

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiNx<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiNx>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiNx>0.9 could be then due to a size effect of Si-np but having an amorphous phase. PMID:23324447

  19. Structural and optical characterization of pure Si-rich nitride thin films

    NASA Astrophysics Data System (ADS)

    Debieu, Olivier; Nalini, Ramesh Pratibha; Cardin, Julien; Portier, Xavier; Perrière, Jacques; Gourbilleau, Fabrice

    2013-01-01

    The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiN x>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiN x<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiN x>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiN x>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

  20. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    SciTech Connect

    Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

    2014-03-15

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu){sub 2}]{sub 2} precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities.

  1. Dielectric polarization, anisotropy and nonradiative energy transfer into nanometre-scale thin semiconducting films

    NASA Astrophysics Data System (ADS)

    Gordon, J. M.; Gartstein, Yu N.

    2013-10-01

    A common problem of nonradiative energy transfer (NRET) from a small energy donor into a neighbouring energy acceptor layer is addressed with the emphasis on the layer thickness dependence. Two complementary approaches are employed to study dielectric polarization effects on NRET into thin films: a macroscopic analysis treating the acceptor layer as a continuum characterized by a frequency-dependent dielectric function, and a direct modelling utilizing discrete acceptor lattices, each of the acceptors being a polarizable point dipole. Explicit illustrations are provided of an interesting phenomenon, when NRET into thinner films can counter-intuitively be more efficient than NRET into thicker films. We show that this phenomenon may take place for a broad range of the acceptor polarization responses, including metallic-like and insulating behaviour as well as responses with weak and strong dissipation. The spectral vicinity of a strong dielectric resonance in the acceptor layer is studied as a specific example. The role of geometry-derived and intrinsic anisotropy of the acceptor response is clarified in the illustrations. Our results suggest that NRET optimization might be possible in the design of hybrid nanostructures, where the geometry of the structures is better matched with spectral properties of donor and acceptor subsystems.

  2. Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films

    SciTech Connect

    Pamu, D.; Sudheendran, K.; Ghanashyam Krishna, M.; James Raju, K. C.

    2008-03-15

    Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, even at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.

  3. RF Micro-Electro-Mechanical Systems Capacitive Switches Using Ultra Thin Hafnium Oxide Dielectric

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Onodera, Kazumasa; Maeda, Ryutaro

    2006-01-01

    A π-type RF capacitive switch using about 45-nm-thick HfO2 dielectric layer was fabricated. High isolation performance was obtained in wide-band range when the switch was down-state. The isolation was better than -40 dB at the frequency range of 4-35 GHz. Particularly, the isolation was better than -50 dB in the frequency range of 8-12 GHz, i.e., X band. HfO2 showed excellent process compatibility with conventional microfabrication procedure. The 45-nm-thick HfO2 film was prepared using sputtering at room temperature so that it was feasible to be integrated into RF switch and other microwave circuits. The results of constant bias stressing showed that the ultra thin HfO2 had excellent reliability. The electric breakdown of HfO2 was observed, which had no apparent negative effects on the reliability of the dielectric. HfO2 dielectrics were attractive in the application of RF micro-electro-mechanical systems (MEMS) switch for new generation of low-loss high-linearity microwave circuits.

  4. Thickness dependence of the dielectric properties of thermally evaporated Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Ulutas, K.; Deger, D.; Yakut, S.

    2013-03-01

    Sb2Te3 thin films of different thickness (23 - 350 nm) were prepared by thermal evaporation technique. The thickness dependence of the ac conductivity and dielectric properties of the Sb2Te3 films have been investigated in the frequency range 10 Hz- 100 kHz and within the temperature range 293-373K. Both the dielectric constant epsilon1 and dielectric loss factor epsilon2 were found to depend on frequency, temperature and film thickness. The frequency and temperature dependence of ac conductivity (σac(ω)) has also been determined. The ac conductivity of our samples satisfies the well known ac power law; i.e., σac(ω) propto ωs where s<1 and independent of the film thickness. The temperature dependence of ac conductivity and parameter s is reasonably well interpreted by the correlated barrier hopping (CBH) model. The activation energies were evaluated for various thicknesses. The temperature coefficient of the capacitance (TCC) and permitivity (TCP) were determined as a function of the film thickness. The microstructure of the samples were analyzed using X-ray diffraction (XRD). This results are discussed on the base of the differences in their morphologies and thicknesses. The tendency for amorphization of the crystalline phases becomes evident as the film thickness increases.

  5. UV protection filters by dielectric multilayer thin films on Glass BK-7 and Infrasil 301

    NASA Astrophysics Data System (ADS)

    Abdel-Aziz, M. M.; Azim, Osama A.; Abdel-Wahab, L. A.; Seddik, Mohamed M.

    2006-10-01

    The increasing use of Ultraviolet (UV) light in medicine, industrial environments, for cosmetic use, and even in consumer products necessitates that greater attention be paid to the potential hazards of this type of electromagnetic radiation. To avoid any adverse effects of exposure to this type of radiation, four suitable protection filters were produced to block three UV bands (UVA, UVB, and UVC). The design structure of the required dielectric multilayer filters was done by optical thin film technology using the absorbing property of UV radiation for the substrates and dielectric materials. The computer analyses of the multilayer filter formulas were prepared using Macleod Software for the production processes. The deposition technique was achieved on optical substrates (Glass BK-7 and Infrasil 301) by dielectric material combinations including Titanium dioxide (Ti 2O 3), Hafnium dioxide (HfO 2), and Lima (mixture of oxides SiO 2/Al 2O 3); deposition being achieved using an electron beam gun. The output results of the theoretical and experimental transmittance values for spectral band from 200 nm to 800 nm were discussed in four processes. To analyze the suitability for use in 'real world' applications, the test pieces were subjected to the durability tests (adhesion, abrasion resistance, and humidity) according to Military Standard MIL-C-675C and MIL-C-48497A.

  6. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    SciTech Connect

    Lu, Cimang Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  7. Spreading of Thin Droplets of Perfect and Leaky Dielectric Liquids on Inclined Surfaces.

    PubMed

    Corbett, Andrew; Kumar, Satish

    2016-07-01

    The spreading of droplets may be influenced by electric fields, a situation that is relevant to applications such as coating, printing, and microfluidics. In this work we study the effects of an electric field on the gravity-driven spreading of two-dimensional droplets down an inclined plane. We consider both perfect and leaky dielectric liquids, as well as perfectly and partially wetting systems. In addition to the effects of electric fields, we examine the use of thermocapillary forces to suppress the growth of the capillary ridge near the droplet front. Lubrication theory is applied to generate a set of coupled partial differential equations for interfacial height and charge, which are then solved numerically with a finite-difference method. Electric fields increase the height of the capillary ridge in both perfect and leaky dielectric droplets due to electrostatic pressure gradients that drive liquid into the ridge. In leaky dielectrics, large interfacial charge gradients in the contact-line region create shear stresses that also enhance ridge growth and the formation of trailing minor ridges. The coalescence of these ridges can significantly affect the long-time thinning rate of leaky dielectric droplets. In partially wetting liquids, electric fields promote the splitting of smaller droplets from the primary droplet near the receding contact line due to the interplay between electrostatic forces and disjoining pressure. Cooling from below and heating from above generates thermocapillary forces that counteract the effects of electric fields and suppress the growth of the capillary ridge. The results of this work have important implications for manipulating the spreading of droplets down inclined surfaces. PMID:27247998

  8. Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

    NASA Astrophysics Data System (ADS)

    Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

    2014-08-01

    Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

  9. Optical waveguiding properties and refractive index analysis of boron nitride (BN) thin films prepared by reactive ion plating

    NASA Astrophysics Data System (ADS)

    Boudiombo, J.; Boudrioua, A.; Loulergue, J. C.; Malhouitre, S.; Machet, J.

    1998-05-01

    Thin films of hexagonal boron nitride (h-BN) have been prepared using a reactive ion plating process. Investigations of guiding and optical properties of films have been performed using m-line spectroscopy. Both ordinary and extraordinary refractive indices are, respectively, determined from TE and TM mode excitation. Furthermore, refractive index profile analysis using an improved inverse WKB method reveals a gradient-like behavior indicating an optical inhomogeneity of the deposited films along the thickness. An optical anisotropy study confirms the films uniaxial nature with a birefringence, Δ n, of about 0.11.

  10. Mechanical properties measurement of silicon nitride thin films using the bulge test

    NASA Astrophysics Data System (ADS)

    Lee, Hun Kee; Ko, Seong Hyun; Han, Jun Soo; Park, HyunChul

    2007-12-01

    The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.

  11. Near single crystal-level dielectric loss and nonlinearity in pulsed laser deposited SrTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Li, Hong-Cheng; Si, Weidong; West, Alexander D.; Xi, X. X.

    1998-07-01

    We present low-frequency dielectric loss and nonlinearity measurements in SrTiO3 thin films grown by pulsed laser deposition on SrRuO3 electrode layers. A low loss tangent in the order of 10-4, close to the level found in SrTiO3 single crystals, was observed. Combined with a large tunability, this resulted in a figure of merit for frequency and phase agile materials that can rival that observed in single crystals. The result is potentially significant for tunable microwave device applications, and it points to stress and interface effects as the possible causes for higher dielectric losses in thin films.

  12. Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

    PubMed

    Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

    2015-01-14

    We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles. PMID:25531164

  13. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    PubMed

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors. PMID:21937333

  14. Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses

    SciTech Connect

    Rublack, Tino; Muchow, Markus; Schade, Martin; Leipner, Hartmut S.; Seifert, Gerhard

    2012-07-15

    The microstructural impact of selective femtosecond laser ablation of thin dielectric layers from monocrystalline silicon wafers was investigated. Various spots opened by 280 fs laser pulses at {lambda} = 1.03 {mu}m wavelength and 50 fs pulses at 800 nm, respectively, were analyzed in detail using Raman and transmission electron microscopy. The results show clearly that the thin dielectric films can be removed without any detectable modification of the Si crystal structure in the opened area. In contrast, in adjacent regions corresponding to laser fluence slightly below the breaking threshold, a thin layer of amorphous silicon with a maximum thickness of about 50 nm is found at the Si/SiO{sub 2} interface after laser irradiation. More than one pulse on the same position, however, causes structural modification of the silicon after thin film ablation in any case.

  15. Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

    NASA Astrophysics Data System (ADS)

    Ng, T. H.; Chim, W. K.; Choi, W. K.; Ho, V.; Teo, L. W.; Du, A. Y.; Tung, C. H.

    2004-05-01

    Trilayer structures, consisting of a rapid thermal oxide (RTO) layer (2.5 or 5 nm thick) grown on silicon, a sputtered Ge middle layer (3-20 nm thick), and a 50-nm-thick sputtered silicon oxide capping layer, exhibit significant penetration of Ge atoms into the silicon substrate for devices with the smaller (2.5 nm) RTO thickness, resulting in negligible nanocrystal formation and hence no charge storage or memory effect. The Ge penetration is minimized by replacing the RTO layer with a high dielectric constant (high-κ) silicon nitride/hafnium dioxide stack (grown by metalorganic chemical vapor deposition) having a larger physical thickness but smaller equivalent oxide thickness of 1.9 nm. Results show that the high-κ trilayer structure exhibits better charge storage capability (in terms of a lower program voltage) and better charge retention performance as compared to the RTO trilayer structure.

  16. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    NASA Astrophysics Data System (ADS)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  17. Three-dimensional kinetic Monte Carlo simulations of cubic transition metal nitride thin film growth

    NASA Astrophysics Data System (ADS)

    Nita, F.; Mastail, C.; Abadias, G.

    2016-02-01

    A three-dimensional kinetic Monte Carlo (KMC) model has been developed and used to simulate the microstructure and growth morphology of cubic transition metal nitride (TMN) thin films deposited by reactive magnetron sputtering. Results are presented for the case of stoichiometric TiN, chosen as a representative TMN prototype. The model is based on a NaCl-type rigid lattice and includes deposition and diffusion events for both N and Ti species. It is capable of reproducing voids and overhangs, as well as surface faceting. Simulations were carried out assuming a uniform flux of incoming particles approaching the surface at normal incidence. The ballistic deposition model is parametrized with an interaction parameter r0 that mimics the capture distance at which incoming particles may stick on the surface, equivalently to a surface trapping mechanism. Two diffusion models are implemented, based on the different ways to compute the site-dependent activation energy for hopping atoms. The influence of temperature (300-500 K), deposition flux (0.1-100 monolayers/s), and interaction parameter r0 (1.5-6.0 Å) on the obtained growth morphology are presented. Microstructures ranging from highly porous, [001]-oriented straight columns with smooth top surface to rough columns emerging with different crystallographic facets are reproduced, depending on kinetic restrictions, deposited energy (seemingly captured by r0), and shadowing effect. The development of facets is a direct consequence of the diffusion model which includes an intrinsic (minimum energy-based) diffusion anisotropy, although no crystallographic diffusion anisotropy was explicitly taken into account at this stage. The time-dependent morphological evolution is analyzed quantitatively to extract the growth exponent β and roughness exponent α , as indicators of kinetic roughening behavior. For dense TiN films, values of α ≈0.7 and β =0.24 are obtained in good agreement with existing experimental data. At this

  18. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    SciTech Connect

    Volpi, F. Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

    2014-07-28

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, −2.8 to 1.5 GPa, and 2.0 to 2.8 g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen + porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms

  19. Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

    NASA Astrophysics Data System (ADS)

    Cheng, Wei-Chun; Jou, Shyan-Kay; Chiu, Chuei-Fu

    2005-07-01

    We discovered a new silicon nitride with cubic symmetry formed in the silicon at the Ta/Si interface of the TaN/Ta/Si(100) thin film system when the silicon wafer was annealed at 500 or 600°C. The cubic silicon nitride grew into the silicon crystal in the shape of an inverse pyramid after the annealing process. The boundary planes of the inverse pyramid were the \\{111\\} planes of the silicon crystal. The orientation relationship between the silicon nitride and silicon crystal is cubic to cubic. The lattice constant of the new silicon nitride is a=0.5548 nm and is about 2.2% larger than that of the silicon crystal.

  20. Fabrication of water-stable organic transistors using crystalline rubrene thin-film and polymer-treated dielectric (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Kim, Jaejoon; Lee, Hyoek Moo; Cho, Sung Oh

    2015-10-01

    For the real application of organic electronics, stable operation of electronic devices in humid or aqueous condition is essential and desirable. However, most of organic semiconductors were very weak to the oxygen or water and especially, cannot be operated well in aqueous condition without an encapsulation. Here, we present water-stable organic thin-film transistors with highly crystallized rubrene and polymer-treated dielectrics. These high water-stability could be achieved by two factors. First, rubrene, a well-known p-type semiconducting material, showed high air and water stability after the crystallization of `abrupt heating'. By the fabrication and aqueous operation of rubrene thin film transistor, we could show the water stability of crystallized thin-film rubrene. Such high environmental stability is attributed to the fact that rubrene has comparatively low HOMO level of -5.4 eV and large bandgap energy of 3.2 eV and that the rubrene thin-film is composed of well-interconnected orthorhombic rubrene crystals. Second, the polymer-treatment of dielectrics can enhance long-term water stability of fabricated rubrene thin-film transistor. By the complete immersion test of transistors, we could characterize the increase of water-stability after the treatment of dielectrics with cross-linked polymer. For this purpose, polystyrene is cross-linked by electron irradiation and the water penetration into semiconductor/dielectric interface was decreased due to the decreased surface energy of polymer dielectric compared to the SiO₂. The fabricated rubrene thin-film transistors showed a field-effect mobility of ~0.5 cm2V-1s-1 and long-term stability under ambient and aqueous conditions. Also, we investigated their potential applications in chemical or bio sensors.

  1. Electrical properties of nanoscale metallic thin films on dielectric elastomer at various strain rates

    NASA Astrophysics Data System (ADS)

    Faisal, Md. Shahnewaz Sabit; Ye, Zhihang; Chen, Zheng; Asmatulu, Ramazan

    2015-04-01

    Dielectric elastomers (DEs) have significant applications in artificial muscle and other biomedical equipment and device fabrications. Metallic thin films by thin film transfer and sputter coating techniques can provide conductive surfaces on the DE samples, and can be used as electrodes for the actuators and other biomedical sensing devices. In the present study, 3M VHB 4910 tape was used as a DE for the coating and electrical characterization tests. A 150 nm thickness of gold was coated on the DE surfaces by sputter coating under vacuum with different pre-strains, ranging from 0 to 100%. Some of the thin films were transferred to the surface of the DEs. Sputter coating, and direct transferring gold leaf coating methods were studied and the results were analyzed in detail in terms of the strain rates and electrical resistivity changes. Initial studies indicated that the metallic surfaces remain conductive even though the DE films were considerably elongated. The coated DEs can be used as artificial muscle by applying electrical stimulation through the conductive surfaces. This study may provide great benefits to the readers, researchers, as well as companies involved in manufacturing of artificial muscles and actuators using smart materials.

  2. Temperature dependent dielectric and ferroelectric studies of BiFeO3 thin film

    NASA Astrophysics Data System (ADS)

    Gaur, Anand P. S.; Barik, Sujit K.; Katiyar, Ram S.

    2013-03-01

    Although BiFeO3 (BFO) has received a lot of interest due to its good multiferroic properties at room temperature, high leakage current limit its usage for practical applications. Recently, it is found that these properties in thin films can be different due to strain effect induced by substrate, preparation conditions and electrode effects, etc. In this context, we have studied the temperature dependence of polarization and dielectric properties of BFO thin film by varying the bottom electrode thickness and using different electrodes. The strain dependent ferroelectric switching behaviors have also been investigated with a traditional ferroelectric tester and switching spectroscopy piezoresponse force microscopy (SS-PFM), respectively. We used pulsed laser deposition to fabricate thin films of BFO using Si (100) substrate and SrTiO3(STO) as buffer layer with different bottom electrodes such as SrRuO3(SRO), LaNiO3(LNO) and Pt/Si. The thickness of STO layer is kept fixed around 70 nm and the thicknesses of BFO and electrode layer were varied from 70 nm to 200nm. The layers were grown under optimized conditions and polycrystalline nature is found from room temperature XRD. A large enhancement of polarization is found while using LNO electrode and also with reducing the thickness of BFO layer. The remnant polarization and cohesivity also shows large increase with increaisng temperature, although leakage current increases significantly. NSF

  3. Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films

    SciTech Connect

    Bolakis, Christos; Grbovic, Dragoslav; Lavrik, Nickolay V; Karunasiri, Gamani

    2010-01-01

    A terahertz-absorbing thin-film stack, containing a dielectric Bragg reflector and a thin chromium metal film, was fabricated on a silicon substrate for applications in bi-material terahertz (THz) sensors. The Bragg reflector is to be used for optical readout of sensor deformation under THz illumination. The THz absorption characteristics of the thin-film composite were measured using Fourier transform infrared spectroscopy. The absorption of the structure was calculated both analytically and by finite element modeling and the two approaches agreed well. Finite element modeling provides a convenient way to extract the amount of power dissipation in each layer and is used to quantify the THz absorption in the multi-layer stack. The calculation and the model were verified by experimentally characterizing the multi-layer stack in the 3-5 THz range. The measured and simulated absorption characteristics show a reasonably good agreement. It was found that the composite film absorbed about 20% of the incident THz power. The model was used to optimize the thickness of the chromium film for achieving high THz absorption and found that about 50% absorption can be achieved when film thickness is around 9 nm.

  4. Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films.

    PubMed

    Bolakis, C; Grbovic, D; Lavrik, N V; Karunasiri, G

    2010-07-01

    A terahertz-absorbing thin-film stack, containing a dielectric Bragg reflector and a thin chromium metal film, was fabricated on a silicon substrate for applications in bi-material terahertz (THz) sensors. The Bragg reflector is to be used for optical readout of sensor deformation under THz illumination. The THz absorption characteristics of the thin-film composite were measured using Fourier transform infrared spectroscopy. The absorption of the structure was calculated both analytically and by finite element modeling and the two approaches agreed well. Finite element modeling provides a convenient way to extract the amount of power dissipation in each layer and is used to quantify the THz absorption in the multi-layer stack. The calculation and the model were verified by experimentally characterizing the multi-layer stack in the 3-5 THz range. The measured and simulated absorption characteristics show a reasonably good agreement. It was found that the composite film absorbed about 20% of the incident THz power. The model was used to optimize the thickness of the chromium film for achieving high THz absorption and found that about 50% absorption can be achieved when film thickness is around 9 nm. PMID:20639934

  5. Cross-linking effect on dielectric properties of polypropylene thin films and applications in electric energy storage

    NASA Astrophysics Data System (ADS)

    Yuan, Xuepei; Chung, T. C. Mike

    2011-02-01

    A family of cross-linked polypropylene (x-PP) thin film dielectrics is systematically studied to understand the cross-linking effect on the dielectric properties. Evidently, the butylstyrene (BSt) cross-linkers increase both the dielectric constant (ɛ) and breakdown strength (E), without increasing energy loss. An x-PP dielectric, with 3.65 mol % BSt cross-linkers, exhibits a ɛ ˜3, which is independent of a wide range of temperatures and frequencies, slim D-E hysteresis loops, high breakdown strength (E=650 MV/m), narrow breakdown distribution, and reliable energy storage capacity >5 J/cm3 (double that of state-of-the-art biaxially oriented polypropylene capacitors), without showing any increase in energy loss.

  6. Shift and elimination of microwave Fabry-Perot resonances in a dielectric covered with a thin metal layer

    NASA Astrophysics Data System (ADS)

    Ragulis, Paulius; Simniškis, Rimantas; Kancleris, Žilvinas

    2015-04-01

    In this paper, we consider a plane electromagnetic wave incident onto a dielectric plate, which has one surface covered with a thin layer of metal. An oblique incident angle was considered for the TE (s polarization in optic) and TM (p polarization) plane waves. The thin metal layer is treated as an infinitesimal thickness. It was characterized by a surface conductivity and accounted for by a tangential magnetic field component step induced by the current flow in the metal layer. Compact expressions, which describe the reflection, transmission and absorption in a dielectric plate covered with a thin layer of metal, have been obtained. It was shown that by choosing the appropriate surface conductivity, the Fabry-Perot transmission resonances can be shifted to the position where the maximum reflection is observed in the case of an uncovered dielectric. On the other hand, the elimination of the Fabry-Perot resonances can be also achieved by choosing a proper metal surface conductivity. Measurements of the reflection from the glass covered with a thin layer of metal have been performed in a wide microwave frequency range (2-12 GHz) revealing a large difference in the measured reflection coefficient from the dielectric and metalized surfaces. The measured results fit well with those calculated by employing analytical expressions obtained in this paper.

  7. Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

    NASA Astrophysics Data System (ADS)

    Guerfi, Y.; Doucet, J. B.; Larrieu, G.

    2015-10-01

    Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness.

  8. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.

    PubMed

    Han, Shu-Jen; Reddy, Dharmendar; Carpenter, Gary D; Franklin, Aaron D; Jenkins, Keith A

    2012-06-26

    Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV(ds)). A crucial figure-of-merit for analog/RF transistors is the intrinsic voltage gain (g(m)/g(ds)) which requires both high g(m) (primary component of f(T)) and low g(ds). Obtaining current saturation has become one of the key challenges in graphene device design. In this work, we study theoretically the influence of the dielectric thickness on the output characteristics of graphene FETs by using a surface-potential-based device model. We also experimentally demonstrate that by employing a very thin gate dielectric (equivalent oxide thickness less than 2 nm), full drain current saturation can be obtained for large-scale chemical vapor deposition graphene FETs with short channels. In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements. PMID:22582702

  9. Development of dielectric barrier discharge plasma processing apparatus for mass spectrometry and thin film deposition

    SciTech Connect

    Majumdar, Abhijit; Hippler, Rainer

    2007-07-15

    Cost effective and a very simple dielectric barrier discharge plasma processing apparatus for thin film deposition and mass spectroscopic analysis of organic gas mixture has been described. The interesting features of the apparatus are the construction of the dielectric electrodes made of aluminum oxide or alumina (Al{sub 2}O{sub 3}) and glass and the generation of high ignition voltage from the spark plug transformer taken from car. Metal capacitor is introduced in between ground and oscilloscope to measure the executing power during the discharge and the average electron density in the plasma region. The organic polymer films have been deposited on Si (100) substrate using several organic gas compositions. The experimental setup provides a unique drainage system from the reaction chamber controlled by a membrane pump to suck out and remove the poisonous gases or residuals (cyanogens, H-CN, CH{sub x}NH{sub 2}, etc.) which have been produced during the discharge of CH{sub 4}/N{sub 2} mixture.

  10. AC conductivity and dielectric measurements of metal-free phthalocyanine thin films dispersed in polycarbonate

    NASA Astrophysics Data System (ADS)

    Riad, A. S.; Korayem, M. T.; Abdel-Malik, T. G.

    1999-10-01

    The dielectric constant and the dielectric loss of thin films of metal-free phthalocyanine dispersed in polycarbonate using ohmic gold electrodes are investigated in the frequency range 20-10 5 Hz and within the temperature range 300-388 K. The frequency dependence of the impedance spectra plotted in the complex plane shows semicircles. The Cole-Cole diagrams have been used to determine the molecular relaxation time, τ, The temperature dependence of τ is expressed by thermally activated process. The AC conductivity σ AC (ω) is found to vary as ωs with the index s⩽1, indicating a dominant hopping process at low temperatures. From the temperature dependence of AC conductivity, free carrier conduction with mean activation energy of 0.33 eV is observed at higher temperatures. Capacitance and loss tangent are found to decrease with increasing frequency and increase with increasing temperature. Such characteristics are found to be in good qualitative agreement with existing equivalent circuit model assuming ohmic contacts.

  11. Dielectric Barrier Discharge Ionization in Characterization of Organic Compounds Separated on Thin-Layer Chromatography Plates

    PubMed Central

    Cegłowski, Michał; Smoluch, Marek; Babij, Michał; Gotszalk, Teodor; Silberring, Jerzy; Schroeder, Grzegorz

    2014-01-01

    A new method for on-spot detection and characterization of organic compounds resolved on thin layer chromatography (TLC) plates has been proposed. This method combines TLC with dielectric barrier discharge ionization (DBDI), which produces stable low-temperature plasma. At first, the compounds were separated on TLC plates and then their mass spectra were directly obtained with no additional sample preparation. To obtain good quality spectra the center of a particular TLC spot was heated from the bottom to increase volatility of the compound. MS/MS analyses were also performed to additionally characterize all analytes. The detection limit of proposed method was estimated to be 100 ng/spot of compound. PMID:25170762

  12. Millimeter Wave Sensor For On-Line Inspection Of Thin Sheet Dielectrics

    DOEpatents

    Bakhtiari, Sasan; Gopalsami, Nachappa; Raptis, Apostolos C.

    1999-03-23

    A millimeter wave sensor is provided for non-destructive inspection of thin sheet dielectric materials. The millimeter wave sensor includes a Gunn diode oscillator (GDO) source generating a mill meter wave electromagnetic energy signal having a single frequency. A heater is coupled to the GDO source for stabilizing the single frequency. A small size antenna is coupled to the GDO source for transmitting the millimeter wave electromagnetic energy signal to a sample material and for receiving a reflected millimeter wave electromagnetic energy signal from the sample material. Ferrite circulator isolators coupled between the GDO source and the antenna separate the millimeter wave electromagnetic energy signal into transmitted and received electromagnetic energy signal components and a detector detects change in both amplitude and phase of the transmitted and received electromagnetic energy signal components. A millimeter wave sensor is provided for non-destructive inspection of thin sheet dielectric materials. The millimeter wave sensor includes a Gunn diode oscillator (GDO) source generating a mill meter wave electromagnetic energy signal having a single frequency. A heater is coupled to the GDO source for stabilizing the single frequency. A small size antenna is coupled to the GDO source for transmitting the millimeter wave electromagnetic energy signal to a sample material and for receiving a reflected millimeter wave electromagnetic energy signal from the sample material. Ferrite circulator isolators coupled between the GDO source and the antenna separate the millimeter wave electromagnetic energy signal into transmitted and received electromagnetic energy signal components and a detector detects change in both amplitude and phase of the transmitted and received electromagnetic energy signal components.

  13. Least-squares electromagnetic analysis of thin dielectrics using surface equivalence

    NASA Astrophysics Data System (ADS)

    Shieh, Kuen-Wey

    2000-10-01

    In this thesis, the motivation was to study the applicability and test the limits of analytical formulations using surface equivalence, in dealing with the scattering problem of a thin dielectric slab of finite extent. In this application of the surface equivalence principle, the unknowns, equivalent surface electric and magnetic currents, are established using the method of moments. Described herein, in order to solve for the unknowns, are four new numerical techniques called LSM, CLSM, CLSM+RCA and CWLSM+RCA, employed to deal with the radar cross section (RCS) of electromagnetic wave scattering from thin dielectric slabs, for different thicknesses in three dimensions. The designations, LSM, CLSM, CLSM+RCA and CWLSM+RCA stand for least squares method, constrained least squares method, constrained least squares method plus ring current approximation and constrained weighted least squares method plus ring current approximation, respectively. The least squares method is utilized in the new numerical techniques, providing a better solution in the null region of the RCS than the combined field integral equation (CFIE). The new numerical techniques employ surface distributions of equivalent currents, thus in principle requiring less computer memory than those employing volume distributions of current density. Moreover, there is no need to worry about how nearly perfect should be the absorbing boundary condition (ABC) that is used in the finite difference time domain technique (FDTD). Further, in this work, the importance of the equivalent surface currents flowing on the edge of a thin slab (which are referred to as `ring currents') has been identified. The new techniques also show fast convergence for the particularly challenging case of edge-on wave incidence, even when the slab is as thin as 0.001 λ0 (λ0 is wavelength in free space). In particular, the CLSM+RCA and CWLSM+RCA analyses have been validated by experiments for the case of backward RCS, these experiments

  14. Aluminium nitride piezoelectric thin films reactively deposited in closed field unbalanced magnetron sputtering for elevated temperature 'smart' tribological applications

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood

    "Smart" high temperature piezoelectric aluminum nitride (AlN) thin films were synthesized by reactive magnetron sputtering using DC; pulsed-DC, and deep oscillation modulated pulsed power (DOMPP) systems on variety of substrate materials. Process optimization was performed to obtain highly c-axis texture films with improved piezoelectric response via studying the interplay between process parameters, microstructure and properties. AlN thin films were sputtered with DC and pulsed-DC systems to investigate the effect of various deposition parameters such as reactive gas ratio, working pressure, target power, pulsing frequency, substrate bias, substrate heating and seed layers on the properties and performance of the film device. The c-axis texture, orientation, microstructure, and chemical composition of AlN films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. Thin films with narrow AlN-(002) rocking curve of 2.5° were obtained with preliminary studies of DOMPP reactive sputtering. In-situ high temperature XRD showed excellent thermal stability and oxidation resistance of AlN films up to 1000 °C. AlN films with optimized processing parameters yielded an inverse piezoelectric coefficient, d33 of 4.9 pm/V close to 90 percent of its theoretical value.

  15. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    NASA Technical Reports Server (NTRS)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  16. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  17. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  18. Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

    PubMed

    Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

    2014-02-01

    This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs. PMID:24514252

  19. Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

    SciTech Connect

    S Kim; M Jang; H Yang; C Park

    2011-12-31

    Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.

  20. Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films

    NASA Astrophysics Data System (ADS)

    H, M. Zeyada; F, M. El-Taweel; M, M. El-Nahass; M, M. El-Shabaan

    2016-07-01

    The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile (Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile (Ch-HPQ) thin films were determined in the frequency range of 0.5 kHz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping (CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

  1. Synthesis, characterization and dielectric properties of SnO2 thin films.

    PubMed

    Yıldırım, M Ali; Yıldırım, Sümeyra Tuna; Sakar, Emine Fedakar; Ateş, Aytunç

    2014-12-10

    SnO2 thin films have been grown on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The annealing temperature effect on the structural, morphological, optical and electrical properties of SnO2 thin films has been investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies have showed that all the films have exhibited polycrystalline nature with tetragonal structure and have been covered well on glass substrates. The crystalline and surface properties of the films have improved with increasing annealing temperature. The band gap values have been changed from 3.73 to 3.66eV depending on the annealing temperature. The refractive index (n), optical static and high frequency dielectric constants (εo, ε∞) values have been calculated as a function of the annealing temperature. The resistivity values of the films have changed between 10(-1) - 10(-3)Ωcm with annealing temperature and light at room temperature. PMID:24929316

  2. Recent advances in the growth, doping and characterization of III V nitride thin films

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Ailey, K. S.; Bremser, M. D.; Carlson, E.; Kern, R. S.; Kester, D. J.; Perry, W. G.; Tanaka, S.; Weeks, T. W.

    Boron nitride thin films have been grown on the (100) surfaces of Si and diamond via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion flux of 200-700°C and 0.20-0.30 mA/cm2, respectively. Fourier-transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM) revealed a growth sequence of amorphous (a-BN), hexagonal (h-BN) and cubic (c-BN) layers under most conditions. This sequence is attributed primarily to increasing biaxial compressive stress with film thickness due to ion bombardment and some interstitial Ar incorporation. A minimum substrate temperature of 200-300° C is required for nucleation and growth of single phase c-BN by this technique. The initial stage of AlN film growth on α(6H)-SiC(0001) substrates by plasma-assisted, gas source molecular beam epitaxy has been investigated in terms of growth mode and interface defects. Essentially atomically flat AlN surfaces, indicative of two-dimensional growth, were obtained using on-axis substrates. Island-like features were observed on the vicinal surfaces. The coalescence of latter features gave rise to double positioning boundaries as a result of the misalignment of the Si/C bilayer steps with the Al/N bilayers in the growing films. The quality of the thicker AlN films was strongly influenced by the concentration of these boundaries. Monocrystalline GaN and AlxGa1-x N(0001) (0≤x≤1) films, void of oriented domain structures and associated low-angle grain boundaries and with smooth surface morphologies, have been grown via OMVPE on high-temperature monocrystalline AlN(0001) buffer layers, previously deposited on vicinal α(6H)-SiC(0001) wafers, using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. Abrupt heterojunctions were demonstrated. The PL spectrum of the pure GaN showed strong near band-edge emissions with a FWHM value of 4 me

  3. Advanced design of ultra-thin barrier aluminum nitride/gallium nitride HEMTs; A study of device design, modeling, and analysis

    NASA Astrophysics Data System (ADS)

    Deen, David A.

    Of the III-Nitride family the AlN/GaN heterojunction has demonstrated the largest combined polarization charge and energy band offsets available in the system. Engineering the polarization fields through varying the AlN thickness leads to two-dimensional electron gas densities (2DEGs) that may be tailored between 0.5--5 x 1013 cm-2 . Furthermore, the ultra-thin (< 5 nm) barrier and excellent transport properties of this all binary heterostructure make it well suited for high electron mobility transistor applications where high frequency and high current are required. This work encompasses various design aspects of GaN-based High Electron Mobility Transistors (HEMTs) which ultimately result in the realization of several generations that utilize the AlN/GaN heterostructure. HEMTs fabricated from high-mobility, low sheet resistance heterostructures have achieved drain current densities up to 2.3 A/mm and transconductance of 480 mS/mm, which set new benchmarks for GaN-based HEMTs. Ultra-thin pre-metallization etching has been employed for the first time to reduce ohmic contact resistance for AlN/GaN HEMTs and has enabled small signal frequency performance in excess of 100 GHz. Moll's method for delay time extraction has been utilized to extract an effective electron velocity in the intrinsic region of the AlN/GaN HEMT and was found to be ˜ 1.2 x 107 cm/s. By leveraging the allowable thickness window of the AlN barrier along with the high density 2DEGs that result, several novel HEMT devices have been designed and realized. High Al-content AlxGa 1-xN back barriers have been employed for improved 2DEG confinement in several new variations of the ultra-thin AlN/GaN HEMT. A dual, parallel-channel AlN/GaN-based HEMT structure is designed and realized for the first time as an epitaxial approach to mitigating DC-RF frequency dispersion. These structures emphasize the facilitation of new device designs that are made possible through the particular qualities the Al

  4. A uniform GTD analysis of the EM diffraction by a thin dielectric/ferrite half-plane and related configurations

    NASA Technical Reports Server (NTRS)

    Rojas, Roberto G.

    1985-01-01

    A uniform geometrical theory of diffraction (UTD) solution is developed for the problem of the diffraction by a thin dielectric/ferrite half plane when it is excited by a plane, cylindrical, or surface wave field. Both transverse electric and transverse magnetic cases are considered. The solution of this problem is synthesized from the solutions to the related problems of EM diffraction by configurations involving perfectly conducting electric and magnetic walls covered by a dielectric/ferrite half-plane of one half the thickness of the original half-plane.

  5. Low temperature synthesis of silicon nitride thin films deposited by VHF/RF PECVD for gas barrier application

    NASA Astrophysics Data System (ADS)

    Lee, Jun S.; Shin, Kyung S.; Sahu, B. B.; Han, Jeon G.

    2015-09-01

    In this work, silicon nitride (SiNx) thin films were deposited on polyethylene terephthalate (PET) substrates as barrier layers by plasma enhanced chemical vapor deposition (PECVD) system. Utilizing a combination of very high-frequency (VHF 40.68 MHz) and radio-frequency (RF 13.56 MHz) plasmas it was possible to adopt PECVD deposition at low-temperature using the precursors: Hexamethyldisilazane (HMDSN) and nitrogen. To investigate relationship between film properties and plasma properties, plasma diagnostic using optical emission spectroscopy (OES) was performed along with the film analysis using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). OES measurements show that there is dominance of the excited N2 and N2+ emissions with increase in N2 dilution, which has a significant impact on the film properties. It was seen that all the deposited films contains mainly silicon nitride with a small content of carbon and no signature of oxygen. Interestingly, upon air exposure, films have shown the formation of Si-O bonds in addition to the Si-N bonds. Measurements and analysis reveals that SiNx films deposited with high content of nitrogen with HMDSN plasma can have lower gas barrier properties as low as 7 . 3 ×10-3 g/m2/day. Also at Chiang Mai University.

  6. A combined SNMS and EFTEM/EELS study on focused ion beam prepared vanadium nitride thin films

    NASA Astrophysics Data System (ADS)

    Kothleitner, Gerald; Rogers, M.; Berendes, A.; Bock, W.; Kolbesen, B. O.

    2005-09-01

    We investigated the diffusion profiles and core-loss fine-structures (ELNES) of thin vanadium nitride films by electron energy-loss spectroscopy (EELS) and energy filtering transmission electron microscopy (EFTEM). The nitride layers have been produced by rapid thermal processing in a NH 3 or N 2 atmosphere and have then been cross-sectioned with a focused ion beam instrument (FIB) under mild milling conditions to maintain crystallography. For the high-resolution electron energy-loss spectroscopy studies (HREELS), a recently developed TEM gun monochromator, implemented into a 200 kV field emission gun column was used in combination with a new post-column spectrometer. It was found that, dependent on substrate and atmosphere, layers with different vanadium and nitrogen content were formed, showing distinct differences in their ELNES. With an energy resolution at the 0.2 eV level and a TEM beam spot size of approximately 2 nm these layers could be unambiguously identified when compared to theoretical ELNES simulations from the literature.

  7. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

    NASA Astrophysics Data System (ADS)

    Román, W. S.; Riascos, H.; Caicedo, J. C.; Ospina, R.; Tirado-Mejía, L.

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si3N4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm-2, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm-1 for B - N bonding and bands around 1700 cm-1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si3N4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si3N4/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  8. Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films

    NASA Astrophysics Data System (ADS)

    Habermehl, S.; Apodaca, R. T.

    2004-01-01

    Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN1.33 to SiN0.54, the Poole-Frenkel trap depth (ΦB) decreases from 1.08 to 0.52 eV as the intrinsic film strain (ɛi) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN1.33 to SiO1.49N0.35, ΦB increases from 1.08 to 1.53 eV as ɛi decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between ΦB and ɛi. Compositionally induced strain relief as a mechanism for regulating ΦB is discussed.

  9. Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films.

    SciTech Connect

    Apodaca, Roger T.; Habermehl, Scott D.

    2003-07-01

    Poole-Frenkel emission in Si-rich nitride and silicon oxynitride thin films is studied in conjunction with compositional aspects of their elastic properties. For Si-rich nitrides varying in composition from SiN{sub 1.33} to SiN{sub 0.54}, the Poole-Frenkel trap depth ({Phi}{sub B}) decreases from 1.08 to 0.52 eV as the intrinsic film strain ({Epsilon}{sub i}) decreases from 0.0036 to -0.0016. For oxynitrides varying in composition from SiN{sub 1.33} to SiO{sub 1.49}N{sub 0.35}, {Phi}{sub B} increases from 1.08 to 1.53 eV as {Epsilon}{sub i} decreases from 0.0036 to 0.0006. In both material systems, a direct correlation is observed between {Phi}{sub B} and {Epsilon}{sub i}. Compositionally induced strain relief as a mechanism for regulating {Phi}{sub B} is discussed.

  10. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  11. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOEpatents

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  12. Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

    SciTech Connect

    Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe; Blasco, Nicolas

    2013-03-18

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

  13. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Liu, Jiangwei; Sang, Liwen; Liao, Meiyong; Coathup, David; Imura, Masataka; Shi, Baogui; Gu, Changzhi; Koide, Yasuo; Ye, Haitao

    2016-01-01

    A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 μF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.

  14. Dielectric and piezoelectric properties of (110) oriented Pb(Zr1‑x Ti x )O3 thin films

    NASA Astrophysics Data System (ADS)

    Jian-Hua, Qiu; Zhi-Hui, Chen; Xiu-Qin, Wang; Ning-Yi, Yuan; Jian-Ning, Ding

    2016-05-01

    A phenomenological Landau–Devonshire theory is developed to investigate the ferroelectric, dielectric, and piezoelectric properties of (110) oriented Pb(Zr1‑x Ti x )O3 (x = 0.4, 0.5, 0.6, and 0.7) thin films. At room temperature, the tetragonal a 1 phase, the orthorhombic a 2 c phase, the triclinic γ 1 phase, and the triclinic γ 2 phase are stable. The appearance of the negative polarization component P 2 in the a 2 c phase and the γ 1 phase is attributed to the nonlinear coupling terms in the thermodynamic potential. The γ phase of the Pb(Zr1‑x Ti x )O3 thin films has better dielectric and piezoelectric properties than the a 2 c phase and the a 1 phase. The largest dielectric and piezoelectric coefficients are obtained in the Pb(Zr0.5Ti0.5)O3 thin film. The piezoelectric coefficient of 110–150 pm/V is obtained in the (110) oriented Pb(Zr0.5Ti0.5)O3 thin film, and the Pb(Zr0.3Ti0.7)O3 thin film has the remnant polarization and relative dielectric constant of 50 μC/cm2 and 100, respectively, which are in agreement with the experimental measurements reported in the literature. Project supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, the Research Fund of Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, China, Major Projects of Natural Science Research in Jiangsu Province, China (Grant No. 15KJA43002), and Qing Lan Project of Education Department of Jiangsu Province, China.

  15. The effectiveness of electron holography, microscopy, and energy-loss spectroscopy in characterizing thin silicon oxide-nitride-oxide structures

    NASA Astrophysics Data System (ADS)

    Waytena, G. L.; Hren, J.; Rez, P.

    1993-02-01

    High-resolution transmission electron microscopy, electron holography, and high-spatial- resolution (19 Å) computer-controlled parallel electron-energy-loss spectrometry (PEELS) were used to probe the structure of and chemical profile across two thin silicon oxide-nitride-oxide layered structures of nominal widths of 10 Å-50 Å-10 Å and 30 Å-50 Å-30 Å. It was found that the individual layers of the stacked structures could be clearly imaged using electron holography, but not with electron microscopy due to the behavior of the microscope transfer function and the shape of the potential profile of the structure. Holography revealed that the layers of the 10 Å-50 Å-10 Å system were in fact 14 Å-28 Å-18 ż5 Å, and the oxide layer in contact with the substrate (first oxide layer) was discontinuous. PEELS showed that the second oxide layer contained nitrogen, and the nitride layer had a silicon-to-nitrogen concentration ratio of 1.0±0.1. The 30 Å-50 Å-30 Å system was in fact 30 Å-20 Å-40 Å-15 ż5 Å. The second oxide layer was SiO1.6±0.2, and nitrogen was found near the film surface which made the structure appear to be four layers. These results show the power of holography in characterizing thin, light-element, amorphous layers and the importance of computer-controlled parallel energy-loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

  16. Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

    SciTech Connect

    Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz; Jensen, Jens; Hultman, Lars

    2013-01-15

    The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inert gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.

  17. Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

    NASA Astrophysics Data System (ADS)

    Jacq, S.; Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Sharaiha, A.

    2016-04-01

    We have synthesized the composition x = 0.01 of the (Sr1-xLax)2(Ta1-xTix)2O7 solid solution, mixing the ferroelectric perovskite phases Sr2Ta2O7 and La2Ti2O7. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N2,O2) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr0.99La0.01) (Ta0.99Ti0.01)O2N, characterized by a band gap Eg = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO3 substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10-3. In oxygen-rich conditions (vol.%N2 ≤ 15%), (110) epitaxial (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 oxides films are deposited, associated to a larger band gap value (Eg = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10-3. For 20 ≤ vol.% N2 ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.

  18. Mn-Doped BaTiO3 Thin Film Sintered Using Nanocrystals and Its Dielectric Properties

    NASA Astrophysics Data System (ADS)

    Takezawa, Yoko; Kobayashi, Keisuke; Nakasone, Fumi; Suzuki, Toshimasa; Mizuno, Youichi; Imai, Hiroaki

    2009-11-01

    BaTiO3 thin films homogeneously doped with Mn were prepared by a novel powder-sintering thin-film process. Mn-doped BaTiO3 nanocrystals 5-7 nm in diameter were synthesized by a sol-gel method and sintered to form a highly densified microstructure containing columnar grains epitaxially grown on a (111)-oriented Pt/TiO2/Al2O3 substrate at a low temperature of 800 °C. On the basis of the results of various structural analyses, Mn was suggested to act as an acceptor in the perovskite structure of BaTiO3, which was also supported by the experimental finding indicating that the leakage current density was significantly improved compared with that of a nondoped BaTiO3 thin film. Moreover, the dielectric constant of the Mn-doped BaTiO3 thin film, 728 at 10 kHz with a loss tangent of 1.3%, was higher than that of the nondoped BaTiO3 thin film, probably owing to the electrostrictive effect induced by in-plane tensile stress. These results clearly indicate the feasibility of using doped BaTiO3 nanocrystals in the powder-sintering thin-film process for improving dielectric properties.

  19. Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response

    SciTech Connect

    Bastani, Y.; Cortes-Pena, A. Y.; Wilson, A. D.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Bassiri-Gharb, N.

    2013-05-13

    The effects of irradiation by X rays and protons on the dielectric and piezoelectric response of highly (100)-textured polycrystalline Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} (PZT) thin films have been studied. Low-field dielectric permittivity, remanent polarization, and piezoelectric d{sub 33,f} response all degraded with exposure to radiation, for doses higher than 300 krad. At first approximation, the degradation increased at higher radiation doses, and was stronger in samples exposed to X rays, compared to the proton-irradiated ones. Nonlinear and high-field dielectric characterization suggest a radiation-induced reduction of the extrinsic contributions to the response, attributed to increased pinning of the domain walls by the radiation-induced point defects.

  20. Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric

    SciTech Connect

    Cheng, Kam Ho; Tang, Wing Man; Deng, L. F.; Leung, C. H.; Lai, P. T.; Che Chiming

    2008-12-01

    The carrier mobility of pentacene thin-film transistor is studied by passivating the surface of its SiO{sub 2} gate dielectric in NH{sub 3} at different temperatures, namely, 900, 1000, 1100, and 1150 deg. C. Measurements demonstrate that the higher the annealing temperature, the higher the carrier mobility of the OTFT is. The device annealed at 1150 deg. C has a field-effect mobility of 0.74 cm{sup 2}/V s, which is 35% higher than that of the device annealed at 900 deg. C. Energy-dispersive x-ray analysis, scanning-electron microscopy, and atomic-force microscopy show that the higher carrier mobility should be due to more nitrogen incorporated at the gate-dielectric surface which results in more passivated dielectric surface and larger pentacene grains for carrier transport.

  1. Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO2 substrate

    NASA Astrophysics Data System (ADS)

    Eršte, A.; Fulanović, L.; Čoga, L.; Lin, M.; Thakur, Y.; Zhang, Q. M.; Bobnar, V.

    2016-03-01

    We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels) thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE) and polypropylene (PP), which are at present used in foil capacitors. Stable values of the dielectric constant ɛ‧≈5 (being twice higher than in HDPE and PP) over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.

  2. Structure and dielectric properties of La{sub x}Hf{sub (1−x)}O{sub y} thin films: The dependence of components

    SciTech Connect

    Qi, Zeming; Cheng, Xuerui; Zhang, Guobin; Li, Tingting; Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo

    2013-07-15

    Graphical abstract: - Highlights: • La{sub x}Hf{sub (1−x)}O{sub y} thin films were grown by pulse laser deposition method. • The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase. • The amorphous thin films due to more La introduced have almost same local structure. • The main infrared phonon modes move to lower frequency for the amorphous thin films. • The static dielectric constants of the amorphous thin films increase with La content. - Abstract: La{sub x}Hf{sub (1−x)}O{sub y} (x = 0, 0.1, 0.3, 0.5, 0.7, y=2−(1/2)x) thin films were grown by pulsed laser deposition (PLD) method. The component dependence of the structure and vibration properties of these thin films is studied by combining X-ray diffraction, X-ray absorption fine structure (XAFS) and infrared spectroscopy. The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase and it has the largest static dielectric constant. More La atoms introduced cause amorphous phase formed and the static dielectric constants increase with the La content. Although XAFS indicates that these amorphous thin films have almost same local structures, the infrared phonon modes with most contribution to the static dielectric constant move to lower frequency, which results in the component dependence of the dielectric constant.

  3. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  4. Composite surface-plasmon-polariton waves guided by a thin metal layer sandwiched between a homogeneous isotropic dielectric material and a periodically multilayered isotropic dielectric material

    NASA Astrophysics Data System (ADS)

    Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

    2015-01-01

    Multiple p- and s-polarized compound surface-plasmon-polariton (SPP) waves at a fixed frequency can be guided by a structure consisting of a metal layer sandwiched between a homogeneous isotropic dielectric (HID) material and a periodic multilayered isotropic dielectric (PMLID) material. For any thickness of the metal layer, at least one compound SPP wave must exist. It possesses the p-polarization state, and is strongly bound to the metal/HID interface when the metal thickness is large but to both metal/dielectric interfaces when the metal thickness is small. When the metal layer vanishes, this compound SPP wave transmutes into a Tamm wave. Additional compound SPP waves exist, depending on the thickness of the metal layer, the relative permittivity of the HID material, and the period and composition of the PMLID material. Some of these are p-polarized, the others are s-polarized. All of them differ in phase speed, attenuation rate, and field profile, even though all are excitable at the same frequency. The multiplicity and dependence of the number of compound SPP waves on the relative permittivity of the HID material when the metal layer is thin could be useful for optical sensing applications and intrachip plasmonic optical communication.

  5. The local structure, infrared phonon modes and the origin of the dielectric constant in La2Hf2O7 thin film

    NASA Astrophysics Data System (ADS)

    Qi, Zeming; Cheng, Xuerui; Zhang, Guobin; Li, Tingting; Wang, Yuyin; Shao, Tao; Li, Chengxiang; He, Bo

    2012-03-01

    The local structure and dielectric properties of crystalline and amorphous La2Hf2O7 (LHO) thin film were studied by X-ray absorption spectroscopy and infrared spectroscopy. The basic infrared phonon modes with most contributions to the static dielectric constant of crystal LHO are preserved, which causes the considerable value of the static dielectric constant in the amorphous thin film. The preservation of the main infrared phonon modes in the amorphous thin film is because it has similar the nearest local structures around Hf and La atoms as the crystal LHO. This inheritance of the local structural and vibrational features of the crystal phase is the origin of the dielectric constant of the LHO thin film.

  6. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated. PMID:24245333

  7. Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic.

    PubMed

    Cho, Jeong Ho; Lee, Jiyoul; Xia, Yu; Kim, BongSoo; He, Yiyong; Renn, Michael J; Lodge, Timothy P; Frisbie, C Daniel

    2008-11-01

    An important strategy for realizing flexible electronics is to use solution-processable materials that can be directly printed and integrated into high-performance electronic components on plastic. Although examples of functional inks based on metallic, semiconducting and insulating materials have been developed, enhanced printability and performance is still a challenge. Printable high-capacitance dielectrics that serve as gate insulators in organic thin-film transistors are a particular priority. Solid polymer electrolytes (a salt dissolved in a polymer matrix) have been investigated for this purpose, but they suffer from slow polarization response, limiting transistor speed to less than 100 Hz. Here, we demonstrate that an emerging class of polymer electrolytes known as ion gels can serve as printable, high-capacitance gate insulators in organic thin-film transistors. The specific capacitance exceeds that of conventional ceramic or polymeric gate dielectrics, enabling transistor operation at low voltages with kilohertz switching frequencies. PMID:18931674

  8. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    NASA Astrophysics Data System (ADS)

    Constantinescu, Catalin; Rapp, Ludovic; Delaporte, Philippe; Alloncle, Anne-Patricia

    2016-06-01

    Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  9. Dielectric and ellipsometric studies of the dynamics in thin films of isotactic poly(methylmethacrylate) with one free surface.

    PubMed

    Sharp, J S; Forrest, J A

    2003-03-01

    We have performed dielectric loss measurements at 1 kHz on thin films of isotactic poly(methyl methacrylate). A key distinction of our studies is that the samples measured were supported films with one free surface rather than films that have metallic electrodes covering both surfaces. This unique sample geometry allows us to eliminate any effects due to evaporation of metal onto the top film surface and provides a unique opportunity to make direct comparisons between dielectric loss and glass transition measurements. Film thicknesses in the range from 6 microm to 7 nm were prepared on Al coated substrates. The dielectric loss peak and ellipsometric glass transition temperature of all films were measured. The dielectric loss was found to exhibit no discernible film thickness dependence in either the temperature of the maximum loss value or the shape of the loss curve. In contrast, the measured T(g) values were found to decrease with decreasing film thickness with a maximum shift of 10 K for a 7-nm film. Dielectric measurements were also made on Al coated films and these samples also showed no shift in the temperature of the loss peak. Finally, the T(g) measurements were also made on Si substrates. These values exhibited an increasing T(g) value with film thickness with a maximum increase of approximately 15 K being measured for a 7-nm film. PMID:12689094

  10. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications. PMID:26039187

  11. Green processing of metal oxide core-shell nanoparticles as low-temperature dielectrics in organic thin-film transistors.

    PubMed

    Portilla, Luis; Etschel, Sebastian H; Tykwinski, Rik R; Halik, Marcus

    2015-10-21

    TiO2 , Fe3 O4, AlOx , ITO (indium tin oxide), and CeO2 nanoparticles are tailored to exhibit excellent dispersability in deionized water and alcohols. The latter provides an ecofriendly solution for processing metal oxide nanoparticles at a neutral pH. Water-processed dielectrics from the metal oxide nanoparticles are incorporated into organic thin-film transistors fabricated on rigid and flexible substrates. PMID:26308740

  12. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.

    PubMed

    Afouxenidis, Dimitrios; Mazzocco, Riccardo; Vourlias, Georgios; Livesley, Peter J; Krier, Anthony; Milne, William I; Kolosov, Oleg; Adamopoulos, George

    2015-04-01

    The replacement of SiO2 gate dielectrics with metal oxides of higher dielectric constant has led to the investigation of a wide range of materials with superior properties compared with SiO2. Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. To overcome this bottleneck, research has focused on the development of alternative deposition methods based on solution-processable metal oxides. Here we report the application of spray pyrolysis for the deposition and investigation of Al2x-1·TixOy dielectrics as a function of the [Ti(4+)]/[Ti(4+)+2·Al(3+)] ratio and their implementation in thin film transistors (TFTs) employing spray-coated ZnO as the active semiconducting channels. The films are studied by UV-visible absorption spectroscopy, spectroscopic ellipsometry, impedance spectroscopy, atomic force microscopy, X-ray diffraction and field-effect measurements. Analyses reveal amorphous Al2x-1·TixOy dielectrics that exhibit a wide band gap (∼4.5 eV), low roughness (∼0.9 nm), high dielectric constant (k ∼ 13), Schottky pinning factor S of ∼0.44 and very low leakage currents (<5 nA/cm(2)). TFTs employing stoichiometric Al2O3·TiO2 gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with low operating voltages (∼10 V), negligible hysteresis, high on/off current modulation ratio of ∼10(6), subthreshold swing (SS) of ∼550 mV/dec and electron mobility of ∼10 cm(2) V(-1) s(-1). PMID:25774574

  13. Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays

    NASA Astrophysics Data System (ADS)

    Coiffard, G.; Schuster, K.-F.; Driessen, E. F. C.; Pignard, S.; Calvo, M.; Catalano, A.; Goupy, J.; Monfardini, A.

    2016-08-01

    We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (KID) arrays. Using a 6'' sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2'' wafer was reduced to {<}25 %. Measurements of a 132-pixel KID arrays from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminum KIDs. We measured a noise equivalent power of NEP = 3.6× 10^{-15} W/Hz^{1/2}. Finally, we describe possible routes to further improve the performance of these TiN KID arrays.

  14. Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays

    NASA Astrophysics Data System (ADS)

    Coiffard, G.; Schuster, K.-F.; Driessen, E. F. C.; Pignard, S.; Calvo, M.; Catalano, A.; Goupy, J.; Monfardini, A.

    2016-01-01

    We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (KID) arrays. Using a 6'' sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2'' wafer was reduced to {<} 25 %. Measurements of a 132-pixel KID arrays from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminum KIDs. We measured a noise equivalent power of NEP = 3.6× 10^{-15} W/Hz^{1/2} . Finally, we describe possible routes to further improve the performance of these TiN KID arrays.

  15. Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

    NASA Astrophysics Data System (ADS)

    Reboh, S.; Morin, P.; Hytch, M. J.; Houdellier, F.; Claverie, A.

    2013-10-01

    To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

  16. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  17. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    NASA Astrophysics Data System (ADS)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  18. Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films

    NASA Astrophysics Data System (ADS)

    Iacopi, F.; Tokei, Zs.; Le, Q. T.; Shamiryan, D.; Conard, T.; Brijs, B.; Kreissig, U.; Van Hove, M.; Maex, K.

    2002-08-01

    The deposition of homogeneous thin films on porous substrates has been investigated. The thin film deposition of Ta(N) by physical vapor deposition on porous films with different average pore sizes and material compositions has been studied. The continuity of Ta(N) films on top of porous low-k dielectrics is evaluated by means of ellipsometric porosimetry combined with sheet resistance and atomic force microscopy measurements. Interface reactions are analyzed by x-ray photoelectron spectroscopy profiling. It has been observed that the minimal Ta(N) thickness required to obtain a continuous metal layer on top of the porous film depends, on the one hand, on the porosity and pore size and, on the other hand, on the chemical interaction of the thin film with the porous substrate. The sealing of pores is favored by the presence of carbon in the dielectric matrix. This is explained through a mechanism of local enhancement of the degree of crosslinking in the dielectric matrix, catalyzed by Ta.

  19. Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

    PubMed

    Branquinho, Rita; Salgueiro, Daniela; Santos, Lídia; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2014-11-26

    Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1). PMID:25354332

  20. Thin-film dielectric elastomer sensors to measure the contraction force of smooth muscle cells

    NASA Astrophysics Data System (ADS)

    Araromi, O.; Poulin, A.; Rosset, S.; Favre, M.; Giazzon, M.; Martin-Olmos, C.; Liley, M.; Shea, H.

    2015-04-01

    The development of thin-film dielectric elastomer strain sensors for the characterization of smooth muscle cell (SMC) contraction is presented here. Smooth muscle disorders are an integral part of diseases such as asthma and emphysema. Analytical tools enabling the characterization of SMC function i.e. contractile force and strain, in a low-cost and highly parallelized manner are necessary for toxicology screening and for the development of new and more effective drugs. The main challenge with the design of such tools is the accurate measurement of the extremely low contractile cell forces expected as a result of SMC monolayer contraction (as low as ~ 100 μN). Our approach utilizes ultrathin (~5 μm) and soft elastomer membranes patterned with elastomer-carbon composite electrodes, onto which the SMCs are cultured. The cell contraction induces an in-plane strain in the elastomer membrane, predicted to be in the order 1 %, which can be measured via the change in the membrane capacitance. The cell force can subsequently be deduced knowing the mechanical properties of the elastomer membrane. We discuss the materials and fabrication methods selected for our system and present preliminary results indicating their biocompatibility. We fabricate functional capacitive senor prototypes with good signal stability over the several hours (~ 0.5% variation). We succeed in measuring in-plane strains of 1 % with our fabricated devices with good repeatability and signal to noise ratio.

  1. New Candidate for FRAM Dielectric Layer—Rare Earth Europium Doped PZT Thin Films

    NASA Astrophysics Data System (ADS)

    Yu, Y. J.; Li, Y. M.; Chan, H. L. W.

    2005-03-01

    Europium (Eu) doped lead zirconium titanate (PZT) ferroelectric thin films (PEZT) were grown on platinized Si substrates by a sol-gel technique with a rapid thermal process. Based on the analysis of TEM and AFM, an obvious modification of PZT films by Eu doping was observed. Compared with undoped PZT, PEZT films show 5 times larger size of grains (100 nm) but only 15% increase in roughness mean square (about 1.08 nm). That is, PEZT films with high quality (large grain size and good uniformity) were fabricated under the same processing condition as pure PZT, in no charge of long-time and high-temperature. The high quality PEZT dielectric layer could greatly improve the performance, mainly the reliability and the reproducibility of FRAM units. Furthermore, increased remenant polarization and improved polarization fatigue properties were found by optimizing Eu doping content. Mechanism of Eu doping effects on the microstructure and electrical properties of PZT films was discussed from the physics of crystal growth and the defect chemistry points of view.

  2. Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

    NASA Astrophysics Data System (ADS)

    Houzet, Gregory; Blary, Karine; Lepilliet, Sylvie; Lippens, Didier; Burgnies, Ludovic; Vélu, Gabriel; Carru, Jean-Claude; Nguéma, Edwin; Mounaix, Patrick

    2011-01-01

    The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were subsequently integrated by using a coplanar waveguide technology. The retrieval of the complex permittivity of BST was performed by vectorial scattering parameter measurements up to 190 GHz for various controlling dc field up to 300 kV/cm. At higher frequency, submillimeter wavelength measurements were performed by time domain spectroscopy under free space condition. On this basis, the dispersion of the real part of the permittivity along with the loss tangent are retrieved in agreement with a distributed interaction of ac-field with soft phonons vibration modes, and overlapping between dipole polarization and ionic polarization is observed, around 700 GHz. It is also shown that dipole polarization can be attributed to the presence of small polar nanoregions in the BST film which act as in ferroelectric material with diffuse phase transition.

  3. Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

    SciTech Connect

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Misra, P.; Kukreja, L.M.; Sinha, Neeraj; Kalghatgi, A.T.; Krupanidhi, S.B.

    2010-11-15

    High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.

  4. Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode.

    PubMed

    Nandi, Dip K; Sen, Uttam K; Sinha, Soumyadeep; Dhara, Arpan; Mitra, Sagar; Sarkar, Shaibal K

    2015-07-14

    This article demonstrates the atomic layer deposition (ALD) of tungsten nitride using tungsten hexacarbonyl [W(CO)6] and ammonia [NH3] and its use as a lithium-ion battery anode. In situ quartz crystal microbalance (QCM), ellipsometry and X-ray reflectivity (XRR) measurements are carried out to confirm the self-limiting behaviour of the deposition. A saturated growth rate of ca. 0.35 Å per ALD cycle is found within a narrow temperature window of 180-195 °C. In situ Fourier transform infrared (FTIR) vibrational spectroscopy is used to determine the reaction pathways of the surface bound species after each ALD half cycle. The elemental presence and chemical composition is determined by XPS. The as-deposited material is found to be amorphous and crystallized to h-W2N upon annealing at an elevated temperature under an ammonia atmosphere. The as-deposited materials are found to be n-type, conducting with an average carrier concentration of ca. 10(20) at room temperature. Electrochemical studies of the as-deposited films open up the possibility of this material to be used as an anode material in Li-ion batteries. The incorporation of MWCNTs as a scaffold layer further enhances the electrochemical storage capacity of the ALD grown tungsten nitride (WNx). Ex situ XRD analysis confirms the conversion based reaction mechanism of the as-grown material with Li under operation. PMID:26076771

  5. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    SciTech Connect

    Wan, Yimao; Thomson, Andrew F.; Cuevas, Andres; McIntosh, Keith R.

    2015-01-26

    Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

  6. Cytocompatibility of amorphous hydrogenated carbon nitride films deposited by CH4/N2 dielectric barrier discharge plasmas with respect to cell lines

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Schröder, Karsten; Hippler, Rainer

    2008-10-01

    Special amorphous hydrogenated carbon nitride (a-H-CNx) films have been prepared on glass substrates for the investigation of adhesion and proliferation of different mammalian cell lines. CH4/N2 dielectric barrier discharge plasmas were applied to deposit a-H-CNx coatings at half of the atmospheric pressure. Film quality was modified by varying the CH4:N2 ratio and deposition duration. Chemical composition was determined by x-ray photoelectron spectroscopy and Fourier transformed infrared spectroscopy. The N/C ratio was in the range of 0.20-0.55. A very small surface roughness was verified by atomic force microscopy. Human embryonic kidney (HEK) and rat adrenal pheochromocytoma (PC12) cells were cultivated on the a-H-CNx films to investigate the cytocompatibility of these surfaces. The microscopic images show that both kinds of cells lines were unable to survive. The cells did not adhere to the surfaces, and most of the cells died after certain time spans. Increased amounts of nitrogen in the film induce an accelerated cell death. It is concluded, that the deposited CNx film behaves cytotoxic to HEK and PC12 cell lines.

  7. Cancer cells (MCF-7, Colo-357, and LNCaP) viability on amorphous hydrogenated carbon nitride film deposited by dielectric barrier discharge plasma

    NASA Astrophysics Data System (ADS)

    Majumdar, Abhijit; Ummanni, Ramesh; Schröder, Karsten; Walther, Reinhard; Hippler, Rainer

    2009-08-01

    Atmospheric pressure dielectric barrier discharge plasma in CH4/N2 (1:1) gas mixture has been employed to deposit amorphous hydrogenated carbon nitride (aH-CNx) film. In vitro studies with three different cancer cell lines were carried out on the coated surfaces. Preliminary biocompatibility and effect of CH4/N2 films have been investigated by measuring cell proliferation. Three different cancer cell (MCF-7, Colo-357, and LNCaP) suspensions have been exposed on the surface of aH-CNx film to investigate the effect of deposited films on viability of cells. Results from the MTS (3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H- tetrazolium, inner salt) proliferation assays indicated that the deposited aH-CNx film is cytotoxic to cancer cell lines. Time course cell viability assay indicated maximum cell death at 24 h after seeding the cells. This effect is dependant on physicochemical and mechanical properties of the deposited films. The deposited film has been characterized by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results confirm the presence of C-N, C≡N, C-Hx, C-O, N-O, overlapping NH, and OH bonds in the film.

  8. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    NASA Astrophysics Data System (ADS)

    Glavin, Nicholas R.; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A.

    2015-04-01

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B+, B*, N+, N*, and molecular species including N2*, N2+, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N+ ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N+ ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good thicknesses uniformity over macroscopic areas.

  9. Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

    SciTech Connect

    Glavin, Nicholas R. E-mail: andrey.voevodin@us.af.mil; Muratore, Christopher; Jespersen, Michael L.; Hu, Jianjun; Fisher, Timothy S.; Voevodin, Andrey A. E-mail: andrey.voevodin@us.af.mil

    2015-04-28

    Physical vapor deposition (PVD) has recently been investigated as a viable, alternative growth technique for two-dimensional materials with multiple benefits over other vapor deposition synthesis methods. The high kinetic energies and chemical reactivities of the condensing species formed from PVD processes can facilitate growth over large areas and at reduced substrate temperatures. In this study, chemistry, kinetic energies, time of flight data, and spatial distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated. Time resolved spectroscopy and wavelength specific imaging were used to identify and track atomic neutral and ionized species including B{sup +}, B*, N{sup +}, N*, and molecular species including N{sub 2}*, N{sub 2}{sup +}, and BN. Formation and decay of these species formed both from ablation of the target and from interactions with the background gas were investigated and provided insights into fundamental growth mechanisms of continuous, amorphous boron nitride thin films. The correlation of the plasma diagnostic results with film chemical composition and thickness uniformity studies helped to identify that a predominant mechanism for BN film formation is condensation surface recombination of boron ions and neutral atomic nitrogen species. These species arrive nearly simultaneously to the substrate location, and BN formation occurs microseconds before arrival of majority of N{sup +} ions generated by plume collisions with background molecular nitrogen. The energetic nature and extended dwelling time of incident N{sup +} ions at the substrate location was found to negatively impact resulting BN film stoichiometry and thickness. Growth of stoichiometric films was optimized at enriched concentrations of ionized boron and neutral atomic nitrogen in plasma near the condensation surface, providing few nanometer thick films with 1:1 BN stoichiometry and good

  10. Mechanical property changes in porous low-k dielectric thin films during processing

    SciTech Connect

    Stan, G. Gates, R. S.; Kavuri, P.; Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W.

    2014-10-13

    The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

  11. Mechanical property changes in porous low-k dielectric thin films during processing

    NASA Astrophysics Data System (ADS)

    Stan, G.; Gates, R. S.; Kavuri, P.; Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W.

    2014-10-01

    The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

  12. Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

    SciTech Connect

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Sakamoto, Michiru; Kano, Kazuhiko; Teshigahara, Akihiko; Kawahara, Nobuaki; Kuwano, Noriyuki

    2006-12-11

    The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN films was observed by piezoresponse force microscopy. The polarity orientation is decided with respect to each fine grain constituting the AlN films, and polarity conversion from Al polarity to N polarity is observed with increasing sputtering pressure. The piezoelectric response of the films changes from +3.7 to -4.4 pC/N with increasing sputtering pressure from 0.36 to 4.0 Pa.

  13. Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

    NASA Astrophysics Data System (ADS)

    Dahal, Rajendra; Ahmed, Kawser; Woei Wu, Jia; Weltz, Adam; Jian-Qiang Lu, James; Danon, Yaron; Bhat, Ishwara B.

    2016-06-01

    The in-plane and out-of-plane mobility–lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current–voltage characteristics of metal–hBN–metal structures measured under external excitations. The in-plane mobility–lifetime products for electrons and holes are ∼2.8 × 10‑5 and ∼4.85 × 10‑6 cm2/V, measured from lateral carrier collection, whereas the out-of-plane mobility–lifetime products for electrons and holes are ∼5.8 × 10‑8 and ∼6.1 × 10‑9 cm2/V, measured from vertical carrier collection, respectively. The mobility–lifetime product is a few orders of magnitude higher along the plane than along the out of plane in hBN films.

  14. Effect of air post contamination on mechanical properties of amorphous carbon nitride thin films

    NASA Astrophysics Data System (ADS)

    Lejeune, M.; Benlahsen, M.; Lemoine, P.

    2005-08-01

    We report in this study the mechanical, structural and compositional characteristics of amorphous carbon nitride films (a-CN x) deposited on Si(100) using RF magnetron sputtering of graphite targets in pure nitrogen and under different RF powers. The properties of the films were determined in their as deposited state using nuclear reaction analysis (NRA), elastic recoil detection (ERDA), infrared (IR) absorption and Raman spectroscopy. The mechanical properties were obtained combining nanoindentation and residual stress measurements. The presence of various types of C-N bonds, as well as the post-deposition contamination of the deposited films by oxygen and water (voids) is revealed. The measured hardness and Young modulus were 0.9-2.03 and 23-27 GPa, respectively. These results have been analysed in term of the matrix flexibility which results from the nitrogen content and the porous character of the films, which can affect deeply the estimation of the physical-mechanical properties of the films.

  15. Maximizing the dielectric response of molecular thin films via quantum chemical design.

    PubMed

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2014-12-23

    Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated. PMID:25415650

  16. Room-temperature magneto-dielectric response in multiferroic ZnFe2O4/PMN-PT bilayer thin films

    NASA Astrophysics Data System (ADS)

    Garg, T.; Kulkarni, A. R.; Venkataramani, N.

    2016-08-01

    The magneto-dielectric response in multiferroic ZnFe2O4/PMN-PT bilayer thin films prepared on a glass substrate using RF magnetron sputtering has been investigated in this work. PMN-PT thin films (i.e. PMN-PT/LCMO/Pt/Ti/glass) deposited on glass were used as a substrate for deposition of ZnFe2O4 thin films. ZnFe2O4 thin films were annealed ex situ at different temperatures. Structural, magnetic, ferroelectric, dielectric and magneto-dielectric studies were carried out on these multiferroic bilayer thin films. Structural studies revealed the presence of each layer in its respective single phase. Magnetic and ferroelectric studies revealed the ferromagnetic and ferroelectric behaviors of these bilayers. To quantify the magnetoelectric coupling, the dielectric constant of the bilayer was measured at room temperature as a function of frequency with and without the applied magnetic field. The magneto-dielectric response MD(%) was calculated by finding the relative change in dielectric constant at 1 kHz as a percentage. The observed MD response was correlated with magnetization of the ferrite layer. An MD response of 2.60% was found for a bilayer film annealed at 350 °C. At this particular annealing temperature, the ZnFe2O4 layer also has the highest saturation magnetization of 1900 G.

  17. Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

    NASA Astrophysics Data System (ADS)

    Chen, G. S.; Chen, S. T.

    2000-06-01

    Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100

  18. Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    NASA Astrophysics Data System (ADS)

    Fanelli, Fiorenza; Bosso, Piera; Mastrangelo, Anna Maria; Fracassi, Francesco

    2016-07-01

    Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. This article briefly reviews our recent progress in thin film deposition by DBDs with particular focus on process optimization. The following examples are provided: (i) the plasma-enhanced chemical vapor deposition of thin films on an open-cell foam accomplished by igniting the DBD throughout the entire three-dimensional (3D) porous structure of the substrate, (ii) the preparation of hybrid organic/inorganic nanocomposite coatings using an aerosol-assisted process, (iii) the DBD jet deposition of coatings containing carboxylic acid groups and the improvement of their chemical and morphological stability upon immersion in water.

  19. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic–inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V‑1 s‑1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from ‑3 to 9 V). This work demonstrates an organic–inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  20. Optical, Dielectric Characterization and Impedance Spectroscopy of Ni-Substituted MgTiO3 Thin Films

    NASA Astrophysics Data System (ADS)

    Gogoi, Pallabi; Srinivas, P.; Sharma, Pramod; Pamu, D.

    2016-02-01

    We report the effects of oxygen mixing percentage (OMP) and annealing temperature on surface morphology, optical, dielectric and electrical properties of (Mg0.95Ni0.05)TiO3 (MNT) thin films deposited onto amorphous SiO2 and platinized silicon (Pt/TiO2/SiO2/Si) substrates by radio frequency (RF) magnetron sputtering. The annealed films exhibited the highest refractive index, 2.05, at 600 nm with an optical bandgap value of 4.33 eV. The metal-insulator-metal (MIM) capacitors of the MNT thin films were fabricated under different OMPs and the dielectric properties were analyzed by using Maxwell-Wagner two-layer theory and Koop's phenomenological theory. MNT films prepared under 50% OMP displayed the highest dielectric constant (11.21) and minimum loss tangent (0.0114) at 1 MHz. The impedance spectroscopy of the films deposited under 50% OMP has been studied. The Nyquist plots of MNT films revealed two semi-circular arcs and is explained on the basis of an equivalent circuit model. The frequency-dependent alternative current (AC) conductivity followed the Jonscher's power law. The activation energies are calculated using the Arrhenius relationship. The hopping frequency of the charged species was calculated, and the correlation between AC and direct current (DC) conduction mechanisms established in accordance with the Barton-Nakajima-Namikawa (BNN) relationship.

  1. In-situ monitoring of the dielectric and electrostrictive properties of anodised thin films for biochip applications.

    PubMed

    Vanhumbeeck, J-F; Proost, J

    2007-04-15

    Further improving the performance of capacitance-based DNA microsensors will depend on the ability to synthesize simply, at a low cost, thin films of high dielectric permittivity with a well-controlled growth morphology. Anodisation of the valve metals Ti, Zr and Ta is a promising route for preparing such films. In this paper, we propose a new method for following the evolution of the dielectric properties of such anodised metallic oxide thin films in-situ during their growth. The technique relies on measuring the evolution of the electrostatic stress developing in the film. Measurements have been carried out on anodic TiO(2) films grown galvanostatically in HNO(3) at 1 and 3 mA/cm(2) and in H(3)PO(4) at 0.5 mA/cm(2). The dielectric permittivity of the films was observed to decrease during the initial stage of anodisation, characterised by a steady increase of the cell voltage with time. The permittivity then reached a constant value when the oxide entered a second growth regime, characterised by a stabilisation of the cell voltage. The origin of the observed permittivity evolution is interpreted in terms of the evolution of the growth morphology of the films during anodisation. PMID:17142021

  2. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    NASA Astrophysics Data System (ADS)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  3. Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Lewis, Carol R. (Inventor); Cygan, Peter J. (Inventor); Jow, T. Richard (Inventor)

    1996-01-01

    Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

  4. Cyanoresin, cyanoresin/cellulose triacetate blends for thin film, dielectric capacitors

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Non-brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.

  5. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics.

    PubMed

    Alshammari, Fwzah H; Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

    2016-09-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm(2) V(-1) s(-1), but increased to 13.3 cm(2) V(-1) s(-1) using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. PMID:27553091

  6. Effect of thermal stresses on the dielectric properties of strontium titanate thin films

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Weiss, C. V.; Alpay, S. P.

    2011-07-01

    We develop a quantitative thermodynamic model to understand the role of thermal stresses on the dielectric permittivity and tunability of (001)-textured polycrystalline monodomain strontium titanate (SrTiO3) films. This methodology is used to compute the dielectric constant and tunability of SrTiO3 films on Si, c-sapphire, LaAlO3, and MgO substrates. Results show that dielectric properties of SrTiO3 depend strongly on the growth/processing temperature TG. For substrates such as MgO that induce compressive in-plane thermal stresses, the dielectric response of SrTiO3 is enhanced. However, for SrTiO3 films on IC-compatible substrates (Si and c-sapphire), thermal stresses can significantly degrade the dielectric permittivity and tunability.

  7. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    PubMed

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-01-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices. PMID:26677773

  8. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    NASA Astrophysics Data System (ADS)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  9. Dielectric properties of lead lanthanum zirconate titanate thin films with and without ZrO2 insertion layers

    NASA Astrophysics Data System (ADS)

    Liu, Shanshan; Ma, Beihai; Narayanan, Manoj; Tong, Sheng; Koritala, Rachel E.; Hu, Zhongqiang; Balachandran, Uthamalingam

    2013-05-01

    The dielectric properties of lead lanthanum zirconate titanate (PLZT) thin films on platinized silicon (Pt/Si) with and without ZrO2 insertion layers were investigated in the temperature range from 20 °C to 300 °C. Permittivity, dielectric loss tangent, and tunability were reduced for the samples with ZrO2 insertion layers compared to those without the layers. Additionally, the permittivity was less dependent on frequency over the broad temperature range studied (20-300 °C). The leakage current behavior of the PLZT films with and without ZrO2 insertion layers was also investigated, and on the basis of those results, a probable conduction mechanism has been suggested. The improved electrical properties in the PLZT with ZrO2 layers are attributed to the ZrO2 layer blocking the mobile ionic defects and reducing free charge carriers to transport.

  10. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    PubMed Central

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-01-01

    The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic–inorganic hybrid devices. PMID:26677773

  11. Structural and electrical properties of thin SrHfON films for high-k gate dielectric

    SciTech Connect

    Feng Liping; Liu Zhengtang

    2009-06-22

    Thin SrHfON films were prepared by reactive cosputtering of Hf-O and Sr-O targets in Ar/N{sub 2} ambient environment. Structural and electrical properties of the as-deposited and annealed SrHfON films used as gate dielectrics have been investigated. The SrHfON films have crystallization temperature higher than 900 deg. C. After annealing at 900 deg. C, high dielectric constant of 19.3 and effective work function of 4.13 eV was obtained for the SrHfON films. It is worth mentioning that the leakage current density of Au/SrHfON/IL SiO{sub x} gate stack is two orders of magnitude lower than that of polycrystalline silicon/HfO{sub 2} structure.

  12. Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition

    SciTech Connect

    Kim, S.; Kim, I.; Kim, K.

    1996-12-01

    Cubic boron nitride ({ital c}-BN) film was deposited on Si(100) substrate using the chemical vapor deposition process assisted by high density plasma of Helicon wave with Borazine (B{sub 3}N{sub 3}H{sub 6}) precursor. It was found that the bombardment of ions with high flux and energy onto the film was necessarily required for synthesizing a {ital c}-BN film. Increasing a negative rf bias on the substrate increased the formation fraction of {ital c}-BN in the film. A nearly pure {ital c}-BN phase was synthesized at the conditions of plasma density in the reactor and rf substrate bias, above 10{sup 11} cm{sup {minus}3} and {minus}350 V, respectively. The phase identification of BN film was carried out by the transmission electron microscopy as well as Fourier transformed infrared spectroscopy. The infrared spectra for {ital c}-BN film synthesized at the rf bias of {minus}350 V appeared at 1093 cm{sup {minus}1} with a strong single peak, which is close to a value for the characteristic vibration mode of bulk {ital c}-BN (1065 cm{sup {minus}1}). The {ital c}-BN in the film was also confirmed and found to be a fine poly-crystalline with the grain sizes ranging from 200 to 400 A. {copyright} {ital 1996 American Institute of Physics.}

  13. Sub-picowatt resolution calorimetry with niobium nitride thin-film thermometer

    SciTech Connect

    Dechaumphai, Edward; Chen, Renkun

    2014-09-15

    High-resolution calorimetry has many important applications such as probing nanoscale thermal transport and studying the thermodynamics of biological and chemical systems. In this work, we demonstrated a calorimeter with an unprecedentedly high resolution at room temperature using a high-performance resistive thermometry material, niobium nitride (NbN{sub x}). Based on a theoretical analysis, we first showed that the heat flux resolution of a resistive-thermometry based calorimeter depends on the parasitic thermal conductance of the device and the temperature coefficient of resistance (TCR) of the thermometer, when the noise is limited by the Johnson noise. Based on this analysis, we then developed a calorimeter using NbN{sub x} as the thermometry material because it possesses both high TCR (∼0.67%/K) and a low thermal conductivity (k ∼ 1.1 W/m K). This calorimeter, when used with the modulated heating scheme, demonstrated an unprecedentedly high power resolution of 0.26 pW at room temperature. In addition, NbN{sub x} based resistive thermometry can also be extended to cryogenic temperature, where the TCR is shown to be significantly higher.

  14. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    NASA Astrophysics Data System (ADS)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  15. Electron-irradiation damage in chromium nitrides and chromium oxynitride thin films.

    PubMed

    Mitterbauer, Christoph; Grogger, Werner; Wilhartitz, Peter; Hofer, Ferdinand

    2006-01-01

    The aim of this work is to monitor changes of the N-K electron energy-loss near-edge structure (ELNES) of chromium nitride layers (CrN) introduced by electron irradiation in a transmission electron microscope (TEM). These changes are different for each sample material and seem to give an indication for a particular composition. The CrN samples (CrN and Cr(0.47)N(0.53)) were prepared on silicon wafers by reactive magnetron sputtering of a metallic chromium target in nitrogen plasma. In addition, a CrON sample (Cr(0.5)O(0.2)N(0.3)) was also investigated. This sample was prepared by the addition of oxygen to the plasma during film deposition. The ELNES of the N-K ionization edge of stoichiometric CrN shows a typical fine structure (peaks at 399.0 and 401.1 eV) and remains nearly unaffected even after high-current-density irradiation. On the other hand the N-K fine structures of Cr(0.47)N(0.53) and Cr(0.5)O(0.2)N(0.3) show a change of the ELNES with irradiation dose. This presumably arises from a 1s-pi*-transition of molecular nitrogen located at interstitial positions in these samples. PMID:16554164

  16. Correlation between stress profiles of cubic boron nitride thin films and the phase sequence revealed from infrared data

    NASA Astrophysics Data System (ADS)

    Klett, A.; Malavé, A.; Freudenstein, R.; Plass, M. F.; Kulisch, W.

    Cubic boron nitride thin films have been ion-beam-assisted deposited on silicon cantilever structures and subsequently back-etched in order to study the stress evolution and finally the growth mechanisms. After each sputtering step, the film stress, the remaining thickness, and the IR data were examined. In this way, the layered sequence of cBN on top of a hBN base layer, influencing the development of the intrinsic film stress, could be studied in detail. The observed stress distribution can be divided into three regions. First, a non-cubic base layer with a constant stress value is formed, followed by a linear increase in the stress after cBN nucleation as a result of the coalescence of cBN nanocrystals. Finally, the stress reaches a second plateau characteristic of the cBN top layer. In addition, the layered sequence was verified by the evolution of the FTIR spectra. Furthermore, the fraction of the sp2-bonded material of the cBN top layer was determined from the IR data. For various deposition conditions, a linear relationship between the stress of the nanocrystalline cBN top layer and the amount of sp3-bonded material was observed. From this, it can be concluded that stress relaxation occurs at the sp2-bonded grain boundary material. No evidence for stress relaxation after cBN nucleation was found.

  17. Comprehensive dielectric performance of bismuth acceptor doped BaTiO3 based nanocrystal thin film capacitors

    SciTech Connect

    Liu, SY; Zhang, HN; Sviridov, L; Huang, LM; Liu, XH; Samson, J; Akins, D; Li, J; O'Brien, S

    2012-11-07

    We present a novel approach to preparing bismuth acceptor doped barium titanate nanocrystal formulations that can be deposited in conjunction with polymers in order to prepare a thin film nanocomposite dielectric that exhibits desirable capacitor characteristics. Exploring the limits of dielectric function in nanocomposites is an important avenue of materials research, while paying strict attention to the overall device quality, namely permittivity, loss and equivalent series resistance (ESR). Pushing capacitor function to higher frequencies, a desirable goal from an electrical engineering point of view, presents a new set of challenges in terms of minimizing interfacial, space charge and polarization effects within the dielectric. We show the ability to synthesize BaTi0.96Bi0.04O3 or BaTi0.97Bi0.03O3 depending on nominal molar concentrations of bismuth at the onset. The low temperature solvothermal route allows for substitution at the titanium site (strongly supported by Rietveld and Raman analysis). Characterization is performed by XRD with Rietveld refinement, Raman Spectroscopy, SEM and HRTEM. A mechanism is proposed for bismuth acceptor substitution, based on the chemical reaction of the alkoxy-metal precursors involving nucleophilic addition. Dielectric analysis of the nanocrystal thin films is performed by preparing nanocrystal/PVP 2-2 nanocomposites (no annealing) and comparing BaTi0.96Bi0.04O3 and BaTi0.97Bi0.03O3 with undoped BaTiO3. Improvements of up to 25% in capacitance (permittivity) are observed, with lower loss and dramatically improved ESR, all to very high frequency ranges (>10 MHz).

  18. Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqiang; Zhao, Hongbin; Xiong, Yuhua; Wei, Feng; Du, Jun; Tang, Zhaoyun; Tang, Bo; Yan, Jiang

    2016-05-01

    This work focused on the metal-oxide-semiconductor (MOS) capacitor and extremely thin silicon-on-insulator (ETSOI) p-type MOS field-effect transistor (pMOSFET) with laminated hafnium and titanium oxide (Hf-Ti-O) thin films as gate dielectric. The electrical behavior of the MOS capacitor shows that the capacitor with Hf-Ti-O gate dielectric has high performance with low equivalent oxide thickness (EOT, ~0.77 nm), small hysteresis (ΔV fb, ~4 mV), and gate current density of 0.33 A/cm2 at V g = V fb - 1 V. The dominant conduction mechanism of the Hf-Ti-O thin film (25°C to 125°C) was Schottky emission at lower gate voltage (-0.8 V to -0.2 V) and Fowler-Nordheim (F-N) tunneling at higher gate voltage (<-0.8 V). An ETSOI pMOSFET with 25 nm gate length (L g) also exhibited good electrical properties with switch ratio of 3.2 × 104, appropriate threshold voltage of -0.16 V, maximum transconductance (G max) of 2.63 mS, drain-induced barrier lowering of 53 mV/V, and subthreshold swing of 65 mV/dec.

  19. Study of Hf-Ti-O Thin Film as High- k Gate Dielectric and Application for ETSOI MOSFETs

    NASA Astrophysics Data System (ADS)

    Chen, Xiaoqiang; Zhao, Hongbin; Xiong, Yuhua; Wei, Feng; Du, Jun; Tang, Zhaoyun; Tang, Bo; Yan, Jiang

    2016-08-01

    This work focused on the metal-oxide-semiconductor (MOS) capacitor and extremely thin silicon-on-insulator (ETSOI) p-type MOS field-effect transistor ( pMOSFET) with laminated hafnium and titanium oxide (Hf-Ti-O) thin films as gate dielectric. The electrical behavior of the MOS capacitor shows that the capacitor with Hf-Ti-O gate dielectric has high performance with low equivalent oxide thickness (EOT, ~0.77 nm), small hysteresis (Δ V fb, ~4 mV), and gate current density of 0.33 A/cm2 at V g = V fb - 1 V. The dominant conduction mechanism of the Hf-Ti-O thin film (25°C to 125°C) was Schottky emission at lower gate voltage (-0.8 V to -0.2 V) and Fowler-Nordheim (F-N) tunneling at higher gate voltage (<-0.8 V). An ETSOI pMOSFET with 25 nm gate length ( L g) also exhibited good electrical properties with switch ratio of 3.2 × 104, appropriate threshold voltage of -0.16 V, maximum transconductance ( G max) of 2.63 mS, drain-induced barrier lowering of 53 mV/V, and subthreshold swing of 65 mV/dec.

  20. A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

    NASA Technical Reports Server (NTRS)

    Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

    1998-01-01

    We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

  1. Charge trapping/de-trapping in nitrided SiO2 dielectrics and its influence on device reliability

    NASA Astrophysics Data System (ADS)

    Kambour, Kenneth; Hjalmarson, Harold; Nguyen, Duc; Kouhestani, Camron; Devine, Roderick

    2012-02-01

    Field effect devices with insulator gate dielectrics are excellent test vehicles to probe the physics of defects and charge trapping in the insulator/ semiconductor structure. p-channel field effect device reliability under negative bias stressing has been identified to originate from at least two terms: a) charged defect generation at the Si substrate/SiOxNy interface and b) charge trapping at neutral defect pre-cursors in the ``bulk'' of the SiOxNy beyond the interface. Measurements of transistor characteristics enable extraction of the two terms. We report the results of such measurements and demonstrate that short time effects are associated primarily with electric field assisted tunneling of holes from the inversion layer to neutral traps. This is confirmed by bias stressing measurements at different frequencies in the range 1 Hz to 2 MHz. First principles modeling of the tunneling/trapping phenomena is presented. K.Kambour worked under contract FA9453-08-C-0245 with the Air Force Research Laboratory/RVSE. Sandia National Labs is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  2. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kumar, T. Santhosh; Gogoi, P.; Thota, S.; Pamu, D.

    2014-06-01

    We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP) on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110) direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCox)TiO3 (x = 0.05) thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ˜ 1.2 × 10-3) over a wide range of frequencies for 75% OMP. The role of electric field frequency (f) and OMP on the ac-conductivity of (Mg0.95Co0.05)TiO3 have been studied. A progressive increase in the activation energy (Ea) and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10-9 to 1.14 × 10-9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  3. Electron energy loss spectroscopy of plasmon resonances in titanium nitride thin films

    NASA Astrophysics Data System (ADS)

    Herzing, Andrew A.; Guler, Urcan; Zhou, Xiuli; Boltasseva, Alexandra; Shalaev, Vladimir; Norris, Theodore B.

    2016-04-01

    The plasmon resonance characteristics of refractory TiN thin films were analyzed using electron energy-loss spectroscopy (EELS). A bulk plasmon resonance was observed at 2.81 eV and a weaker surface plasmon resonance peak was detected at 2.05 eV. These findings are compared to finite-difference time-domain simulations based on measured optical data. The calculated values for both the bulk and surface resonances (2.74 eV and 2.15 eV, respectively) show reasonable agreement with those measured via EELS. The amplitude of the experimentally observed surface resonance was weaker than that typically encountered in noble metal nanostructures, and this is discussed in the context of electron density and reduced spatial confinement of the resonance mode in the thin-film geometry.

  4. A Novel K-Band Tunable Microstrip Bandpass Filter Using a Thin Film HTS/Ferroelectric/ Dielectric Configuration

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; VanKeuls, F.; Miranda, F. A.

    1998-01-01

    We report on YBCO/strontium titanate (STO) thin film K-band tunable bandpass filters on lanthanum aluminate substrates. The 2 pole filters were designed for a center frequency of 19 GHz and 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO (epsilon-rSTO). Center frequency shifts greater than 2 GHz were obtained at a 400V bipolar dc bias at temperatures below 77K, with minimum degradation in the insertion loss of the filters.

  5. Improved Dielectric Properties of Heterostructured Ba2.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices

    NASA Technical Reports Server (NTRS)

    Jain, M.; Majumder, S. B.; Katiyar, R. S.; Bhalla, A. S.; Agrawal, D. C.; Kulkarni, V. N.; VanKeuls, F. W.; Miranda, F. A.; Romanofsky, R. R.; Mueller, C. H.; Fernandez, F.

    2002-01-01

    In the present work we have deposited MgO and Ba(sub 0.5)Sr(sub 0.5)TiO(sub 3)(BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and Rutherford backscattering technique and found to be highly (100) textured. The figure of merit {(C(sub0)-C(sub v)/(C(sub0-tandelta)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13-15 GHz. The high frequency figure of merit (kappa factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 deg/dB for hetero-structured film as compared to 24.65 deg /dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films.

  6. Microwave dielectric and optical properties of amorphous and crystalline Ba0.5Sr0.5TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Goud, J. Pundareekam; Joseph, Andrews; Ramakanth, S.; Naidu, Kuna Lakshun; Raju, K. C. James

    2016-05-01

    The thin films of composition Ba0.5Sr0.5TiO3 (BST5) were deposited by Pulsed Laser Deposition technique on amorphous fused silica substrates at room temperature (RT) and at 700°C. The film deposited at RT is amorphous while the other crystallized in cubic structure. The refractive index (n) and optical band gap (Eg) extracted from transmission spectra in the 190 -2500 nm range. Microwave dielectric properties were investigated using the Split Post Dielectric Resonators (SPDR) technique at spot frequencies of 10GHz and 20GHz. The experimental results show that thin films deposited at high temperature (700°C) shows very high dielectric constant for both 10GHz and 20 GHz. These high dielectric constant films can be used in a wide range of applications such as capacitors, non-volatile high speed random access memories, and electro-optic devices.

  7. The electron-phonon relaxation time in thin superconducting titanium nitride films

    SciTech Connect

    Kardakova, A.; Finkel, M.; Kovalyuk, V.; An, P.; Morozov, D.; Dunscombe, C.; Mauskopf, P.; Tarkhov, M.; Klapwijk, T. M.; Goltsman, G.

    2013-12-16

    We report on the direct measurement of the electron-phonon relaxation time, τ{sub eph}, in disordered TiN films. Measured values of τ{sub eph} are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T{sup −3} temperature dependence. The electronic density of states at the Fermi level N{sub 0} is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

  8. Magnetic anisotropy and permeability in sputtered iron aluminum nitride thin-film materials

    NASA Astrophysics Data System (ADS)

    Liu, Yi-Kuang

    Significant improvement in magnetic properties of FeXN (X = Al, Zr, Ta...) thin films deposited on the sloping surfaces, especially at 60°, was achieved by using various interlayer materials or proper sputtering conditions. The oblique incidence problems in permalloy and CoZrRe thin films were also greatly improved. Test heads fabricated using these materials showed improved permeability. Significant improvement of the thermal stability in FeXN thin films was also achieved. Sputtered at the reduced target-substrate spacing of 38 mm, 200 nm thick thermally stable FeXN thin films were obtained. They had hard axis coercivity ≈0.1--2.0 Oe, easy axis coercivity ≈1.5--3.0 Oe, Hk = 8--16 Oe and Bs = 19--20 kG. Results from transverse field annealing experiments in a uniform field of 700 Oe show no significant change of magnetic properties at 150°C for 3 hours. At 150°C for 24 hours, Hk decreased by 2--4 Oe. Their easy/hard axes did not rotate and the coercivity remained almost unchanged. This superior thermal stability of FeXN films is promising for high moment write heads. The effects of N doping on the magnetic and structural properties of a series of 100 nm FeAlN films sputtered in the presence of N partial pressures were investigated. Increasing N doping increased film resistivity but decreased MS. Extended x-ray absorption fine structure spectra of the short-range atomic order in the Fe(Al) lattices directly indicated that the N went into octahedral sites of bcc Fe and fcc Fe in alpha-Fe and gamma'-Fe 4N phases, respectively, and triggered the order-disorder phase transition observed in x-ray 0--20 diffraction spectra. Mild N doping decreased the grain size and reduced Hc. It also increased the local atomic disorder, which coincided with the maximal value of Ku and the in-plane anisotropic behaviors in the as-deposited films. The roles of N doping in FeXN film optimization processes and its effects on magnetic and structural properties, especially the uniaxial

  9. Modeling the electrode geometry of co-planar capacitors for the microwave dielectric characterization of ceramic thin films

    SciTech Connect

    Veber, A. Fabijan, D.; Kunej, S.

    2013-12-14

    This paper describes the influence of co-planar electrode geometry on the measurement accuracy of microwave dielectric properties of sol-gel-derived Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-NaTaO{sub 3} thin films. The interdigital, co-planar capacitor configurations were prepared with E-beam lithography. A combination of analytical and numerical modelling was used for the optimization of co-planar, interdigital electrode structures for the thin-film characterization. We observed that the number of fingers, their length, as well as the gap between the fingers of the interdigital electrode structure of the co-planar capacitor have a pronounced influence on the accuracy of measurements.

  10. Thermocavitation and its application for fabrication of micron-sized holes on metallic and dielectric thin films

    NASA Astrophysics Data System (ADS)

    Ramirez-San-Juan, J. C.; Padilla-Martinez, J. P.; Zaca Moran, P.; Aboytes-Rodriguez, E.; Martinez-Cantón, A. E.; Ramos-Garcia, R.

    2010-08-01

    Thermocavitation is a mechanism induced by a focused CW laser beam into a high absorbing solution. As a result an overheated region is created followed by explosive phase transition and consequently the formation of an expanding bubble. Once the bubble reaches a cooler region it collapses very rapidly crating a shock wave. Thermocavitation can be a useful tool for the generation of ultrasonic waves and controlled ablation with the important difference compared with pulsed lasers that low power lasers are required. In particular, the above mentioned pressure waves may be capable of producing damage to substrates, for example, in metallic and dielectric thin films. In this work, we present an application of the thermocavitation phenomena which consist in the formation of micro-holes on thin films of titanium and Indium Tin Oxide (ITO) deposited on glass substrate. The micro holes can be employed as a micrometer light sources or spatial filters.

  11. Mechanical properties of low- and high-k dielectric thin films: A surface Brillouin light scattering study

    NASA Astrophysics Data System (ADS)

    Zizka, J.; King, S.; Every, A. G.; Sooryakumar, R.

    2016-04-01

    Surface Brillouin light scattering measurements are used to determine the elastic constants of nano-porous low-k SiOC:H (165 nm) and high-k HfO2 (25 nm) as well as BN:H (100 nm) films grown on Si substrates. In addition, the study investigates the mechanical properties of ultra-thin (25 nm) blanket TiN cap layers often used as hard masks for patterning, and their effects on the underlying low-k dielectrics that support a high level of interconnected porosity. Depending on the relative material properties of individual component layers, the acoustic modes manifest as confined, propagating, or damped resonances in the light scattering spectra, thereby enabling the mechanical properties of the ultra-thin films to be determined.

  12. Tb{sub 2}O{sub 3} thin films: An alternative candidate for high-k dielectric applications

    SciTech Connect

    Gray, Nathan W.; Prestgard, Megan C.; Tiwari, Ashutosh

    2014-12-01

    We are reporting the growth and structural, optical, and dielectric properties of Tb{sub 2}O{sub 3}, a relatively unexplored high-k dielectric material. A pulsed-laser deposition technique was used to grow Tb{sub 2}O{sub 3} thin-films on four different substrates: Si(100), SrTiO{sub 3}(100), LaAlO{sub 3}(100), and MgO(100). High-resolution X-ray diffraction and transmission electron microscopy results confirmed that film growth in an oxygen-rich (10{sup −1 }Torr) environment yields nearly single-crystal C-phase films, while a low-oxygen (10{sup −6 }Torr) environment growth results in the formation of monoclinic polycrystalline B-phase films. Optical transmission measurements showed that the bandgap of Tb{sub 2}O{sub 3} is direct in nature with a value of 2.8 eV and 3.4 eV for the cubic and monoclinic phases, respectively. By measuring the capacitance of test devices, quite high dielectric constants of 13.5 and 24.9 were obtained for the B- and C-phase Tb{sub 2}O{sub 3} films, respectively.

  13. Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

    NASA Astrophysics Data System (ADS)

    Choi, Chul-Min; Oh, Young-Taek; Kim, Kyung-Jun; Park, Jin-Suk; Sukegawa, Hiroaki; Mitani, Seiji; Kim, Sung-Kyu; Lee, Jeong-Yong; Song, Yun-Heub

    2016-07-01

    Temperature dependence of the reliability characteristics of magnetic tunnel junctions (MTJs) with a thin (∼1 nm thick) MgO dielectric film were investigated by numerical analyses based on the E-model, 1/E-model, and power-law voltage V-model, as well as by measuring time-dependent dielectric breakdown (TDDB) degradation. Although the tunneling process giving rise to TDDB is still under debate, the temperature dependence of TDDB was much weaker using the 1/E model than the E-model or power-law model. The TDDB data measured experimentally in CoFeB/MgO/CoFeB MTJ devices also showed rather weak temperature dependence, in good agreement with the numerical results obtained from the 1/E-model considering the self-heating effect in MTJ devices. Moreover, we confirmed by interval voltage stress tests that some degradation in the MgO dielectric layer occurred. Based on our findings, we suggest that to characterize the reliability of MTJs, combined temperature measurements of TDDB and 1/E-model analyses taking the self-heating effect into account should be performed.

  14. Tunable dielectric properties of Barium Magnesium Niobate (BMN) doped Barium Strontium Titanate (BST) thin films by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

    2013-03-01

    We report on the tunable dielectric properties of Mg and Nb co-doped Ba0.45Sr0.55TiO3 (BST) thin film prepared by the magnetron sputtering using BST target (pure and doped with BaMg0.33Nb0.67O3 (BMN)) on Pt/TiO2/SiO2/Al2O3 4'' wafers at 700 °C under oxygen atmosphere. The electrical measurements are conducted on 2432 metal-ferroelectric-metal capacitors using Pt as the top and bottom electrode. The crystalline structure, microstructure, and surface morphology of the films are analyzed and correlated to the films dielectric properties. The BMN doped and undoped BST films have shown tunabilities of 48% and 52%; and leakage current densities of 2.2x10-6 A/cm2 and 3.7x10-5 A/cm2, respectively at 0.5 MV/cm bias field. The results indicate that the BMN doped film exhibits a lower leakage current with no significant decrease in tunability. Due to similar electronegativity and ionic radii, it was suggested that both Mg2+ (accepter-type) and Nb5+ (donor-type) dopants substitutTi4+ ion in BST. The improvement in the film dielectric losses and leakage current with insignificant loss of tunability is attributed to the adversary effects of Mg2+ and Nb5+ in BST.

  15. Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer multilayer dielectric

    NASA Astrophysics Data System (ADS)

    Chen, Ying-Chih; Su, Yan-Kuin; Yu, Hsin-Chieh; Huang, Chun-Yuan; Huang, Tsung-Syun

    2011-10-01

    A wide hysteresis width characteristic (memory window) was observed in the organic thin film transistors (OTFTs) using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer multilayers. In this study, a strong memory effect was also found in the pentacene-based OTFTs and the electric characteristics were improved by introducing PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA trilayer to replace the conventional PHEMA monolayer or PMMA/PHEMA and PHEMA/PMMA bilayer as the dielectric layers of OTFTs. The memory effect was originated from the electron trapping and slow polarization of the dielectrics. The hydroxyl (-OH) groups inside the polymer dielectric were the main charge storage sites of the electrons. This charge-storage phenomenon could lead to a wide flat-band voltage shift (memory window, △VFB = 22 V) which is essential for the OTFTs' memory-related applications. Moreover, the fabricated transistors also exhibited significant switchable channel current due to the charge-storage and slow charge relaxation.

  16. Low-dielectric-constant fluorinated diamond-like carbon thin films by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yi, Jeong Woo

    Fluorinated amorphous carbon (a-C:F) thin films are developed for a low dielectric constant interlayer dielectric material from hexafluorobenze (C 6F6) or 1,1,1,2-tetrafluoroethane (FCH2CF 4) as the source gas and argon as the diluent gas in an asymmetric capacitively coupled rf (radio frequency) plasma reactor and an inductively coupled plasma reactor. Effects of input rf power, fluorination, applied bias voltage and post annealing on the properties of a-C:F films are investigated. For depositing a-C:F films from highly diluted C6F6 (3%) and argon (97%) in the capacitively rf plasma reactor at 150 mTorr, the dielectric constant of the film increases from 2.0 to 2.8 as the rf power is increased from 10 W to 70 W, while the optical energy gap decreases from 2.6 eV to 1.9 eV and the transparency in a ultra-violet range is degraded. At input power of 100 W, the deposited film exhibits high residual stress of 40 MPa and easily peeled off by a Scotch tape test. This is due to high self-bias voltage (-230 V) developed at the substrate holder during deposition. When depositing amorphous carbon films from tetrafluoroethane (TFE) and methane in the capacitively coupled plasma reactor, the incorporation of fluorine in the film is increased with increasing TFE fraction in the feed gas mixture. The dielectric constant of the a-C:F film deposited from pure TFE is as low as 2.3, but the film exhibits poor thermal stability while a-C:H (diamond-like carbon) film deposited from pure methane has a dielectric constant of 3.8 and shows good thermal stability up to 400°C. As the TFE content in the feed is increased, the dielectric constant and the refractive index decrease while the transparency of the film is enhanced significantly. When depositing a-C:F films from C6F6 (4 sccm) and Ar (5 sccm) in the inductively coupled rf plasma reactor, the bias voltage (from a separate 100 KHz source) applied to the substrate holder affects the film properties significantly. As the negative bias

  17. Enhanced mobility in organic field-effect transistors due to semiconductor/dielectric interface control and very thin single crystal

    NASA Astrophysics Data System (ADS)

    Dong, Ji; Yu, Peng; Atika Arabi, Syeda; Wang, Jiawei; He, Jun; Jiang, Chao

    2016-07-01

    A perfect organic crystal while keeping high quality semiconductor/dielectric interface with minimal defects and disorder is crucial for the realization of high performance organic single crystal field-effect transistors (OSCFETs). However, in most reported OSCFET devices, the crystal transfer processes is extensively used. Therefore, the semiconductor/dielectric interface is inevitably damaged. Carrier traps and scattering centers are brought into the conduction channel, so that the intrinsic high mobility of OSCFET devices is entirely disguised. Here, very thin pentacene single crystal is grown directly on bare SiO2 by developing a ‘seed-controlled’ pentacene single crystal method. The interface quality is controlled by an in situ fabrication of OSCFETs. The interface is kept intact without any transfer process. Furthermore, we quantitatively analyze the influence of crystal thickness on device performance. With a pristine interface and very thin crystal, we have achieved the highest mobility: 5.7 cm2 V‑1 s‑1—more than twice the highest ever reported pentacene OSCFET mobility on bare SiO2. This study may provide a universal route for the use of small organic molecules to achieve high performance in lamellar single crystal field-effect devices.

  18. Impact of the Capacitance of the Dielectric on the Contact Resistance of Organic Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Zojer, K.; Zojer, E.; Fernandez, A. F.; Gruber, M.

    2015-10-01

    As the operation of organic thin-film transistors relies exclusively on injected charge carriers, the gate-induced field assumes a dual role: It is responsible for charge-carrier accumulation and, provided that an injection barrier at the contact-semiconductor interface is present, aids charge-carrier injection across this barrier. Besides the gate-source bias, the thickness of the insulator and its dielectric constant influence the gate field. Here, we explore the impact of the capacitance of the gate dielectric on the performance of organic thin-film transistors utilizing drift-diffusion-based simulations comprising a self-consistent consideration of injection. Upon varying the capacitance of the insulating layer, we observe a conceptually different behavior for top-contact and bottom-contact architectures. Top-contact devices possess a nearly constant contact voltage in the linear regime leading to an apparent mobility lowering. In strong contrast, bottom-contact architectures possess non-Ohmic contact resistances in the linear regime due to a contact voltage whose value depends strongly on both the gate-source bias and the capacitance. Counterintuitively, this is accompanied by a mobility being apparently unaffected by the substantial contact resistance. Additionally, threshold-voltage shifts appear due to gate-limited injection. The latter is particularly dominant in bottom-contact architectures, where the threshold voltages steeply increase with the thickness of the insulating layer.

  19. Influence of oxygen annealing conditions on the electronic structure, dielectric function, and charge conduction of gallium-ferrite thin films

    NASA Astrophysics Data System (ADS)

    Shin, Ran Hee; Oh, Seol Hee; Lee, Ji Hye; Jo, William; Jang, Seunghun; Han, Moonsup; Choi, Sukgeun

    2013-12-01

    Gallium-ferrite thin films were studied to investigate the effects of the oxygen annealing conditions on the electrical properties. Ga0.8Fe1.2O3- δ thin films were prepared by using a sol-gel method under different oxygen partial pressures. The structural properties of the films were studied by using X-ray diffraction. X-ray photoemission spectra of the core-levels of Ga, Fe, and O in the films were examined. The dielectric functions of the films were measured at energies from 0.73 to 6.45 eV by using spectroscopic ellipsometry. The Fe valence was changed by the oxygen vacancies, which are dominantly responsible for the dielectric function and the charge conduction. Remarkably, the leakage current of the films annealed under intermediate oxygen atmospheric conditions showed the lowest values. In the film, the oxygen vacancies, were indirectly estimated by using the ratio of Fe2+ to Fe3+, are important to reduce the leakage current, which can be explained by using a space-charge-limited model with shallow traps.

  20. Test results for electron beam charging of flexible insulators and composites. [solar array substrates, honeycomb panels, and thin dielectric films

    NASA Technical Reports Server (NTRS)

    Staskus, J. V.; Berkopec, F. D.

    1979-01-01

    Flexible solar-array substrates, graphite-fiber/epoxy - aluminum honeycomb panels, and thin dielectric films were exposed to monoenergetic electron beams ranging in energy from 2 to 20 keV in the Lewis Research Center's geomagnetic-substorm-environment simulation facility to determine surface potentials, dc currents, and surface discharges. The four solar-array substrate samples consisted of Kapton sheet reinforced with fabrics of woven glass or carbon fibers. They represented different construction techniques that might be used to reduce the charge accumulation on the array back surface. Five honeycomb-panel samples were tested, two of which were representative of Voyager antenna materials and had either conductive or nonconductive painted surfaces. A third sample was of Navstar solar-array substrate material. The other two samples were of materials proposed for use on Intelsat V. All the honeycomb-panel samples had graphite-fiber/epoxy composite face sheets. The thin dielectric films were 2.54-micrometer-thick Mylar and 7.62-micrometer-thick Kapton.

  1. Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

    SciTech Connect

    Kurniawan, Robi; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2015-09-30

    A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

  2. Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

    NASA Technical Reports Server (NTRS)

    Choi, S. W.; Bachmann, K. J.; Lucovsky, G.

    1993-01-01

    Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

  3. Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

    SciTech Connect

    Tayal, Akhil; Gupta, Mukul E-mail: dr.mukul.gupta@gmail.com; Kumar, D.; Reddy, V. R.; Gupta, Ajay; Amir, S. M.; Korelis, Panagiotis; Stahn, Jochen

    2014-12-14

    Nanocrystalline Fe-X-N thin films (with doping X = 0, 3.1 at. % Al, 1.6 at. % Zr), were deposited using reactive ion beam sputtering. Magnetization study reveals that the deposited films exhibit a perpendicular magnetic anisotropy. Thermal stability of the films was investigated systematically and it was observed that the structural and the magnetic stability gets significantly enhanced with Al doping, whereas Zr doping has only a marginal effect. Fe self-diffusion, obtained using polarized neutron reflectivity, shows a suppression with both additives. A correlation between the thermal stability and the diffusion process gives a direct evidence that the enhancement in the thermal stability is primarily diffusion controlled. A combined picture of diffusion, structural, and magnetic stability has been drawn to understand the obtained results.

  4. Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

    NASA Astrophysics Data System (ADS)

    Hofstetter, Markus; Howgate, John; Sharp, Ian D.; Stutzmann, Martin; Thalhammer, Stefan

    2011-06-01

    X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm2 detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 µGy s-1 to 10 mGy s-1 with a signal stability of ±1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10-6 cm3, they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.

  5. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    SciTech Connect

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  6. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    SciTech Connect

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P.

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  7. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

    SciTech Connect

    Greczynski, Grzegorz Hultman, Lars; Petrov, Ivan; Greene, J. E.

    2015-09-15

    X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions

  8. Bulk-wave and guided-wave photoacoustic evaluation of the mechanical properties of aluminum/silicon nitride double-layer thin films.

    PubMed

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M

    2006-12-01

    The development of devices made of micro- and nano-structured thin film materials has resulted in the need for advanced measurement techniques to characterize their mechanical properties. Photoacoustic techniques, which use pulsed laser irradiation to nondestructively induce very high frequency ultrasound in a test object via rapid thermal expansion, are suitable for nondestructive and non-contact evaluation of thin films. In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. The elastic properties and residual stresses in such films affect their mechanical performance. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. The measured transient signals are compared with simulated transient thermoelastic signals in multi-layer structures, and the elastic moduli are determined. Independent pump-probe tests on silicon substrate-supported region and unsupported region are in good agreement. In a second set of experiments, dispersion curves of the A(0) mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made and discussed. PMID:16899268

  9. Dielectric properties of aluminum silver alloy thin films in optical frequency range

    SciTech Connect

    Yang Guang; Sun Jingbo; Zhou Ji

    2011-06-15

    The dielectric properties of direct current (dc) magnetron sputtering aluminum silver alloy films in optical frequency have been quantitatively studied by variable angle spectroscopic ellipsometry. The structure and surface topography of the alloy films were characterized using scanning probe microscopy and x-ray diffraction. The Drude-Lorentz model was used to simulate the dielectric function of Al-Ag alloy films. Meanwhile, the effective medium theory has been utilized for the treatment of surface roughness. We found that the interband transition around 1.5 eV can be shifted through a variable annealing temperature and a changeable silver percentage of Al-Ag alloys.

  10. Nanoindentation study of niobium nitride thin films on niobium fabricated by reactive pulsed laser deposition

    SciTech Connect

    Mamun, Md Abdullah Al; Farha, Ashraf Hassan; Ufuktepe, Yüksel; Elsayed-Ali, Hani E.; Elmustafa, Abdelmageed A.

    2015-03-01

    Nanomechanical and structural properties of NbNx films deposited on single crystal Nb using pulsed laser deposition for different substrate temperature were previously investigated as a function of film/substrate crystal structure (Mamun et al. (2012) [30]). In this study we focus on the effect of laser fluences and background nitrogen pressure on the nanomechanical and structural properties of NbNx films. The crystal structure and surface morphology of the thin films were tested by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Using nanoindentation, the investigation of the nanomechanical properties revealed that the hardness of the NbNx films was directly influenced by the laser fluence for low background nitrogen pressure, whereas the nanomechanical hardness showed no apparent correlation with laser fluence at high background nitrogen pressure. The NbNx film hardness measured at 30% film thickness increased from 14.0 ± 1.3 to 18.9 ± 2.4 GPa when the laser fluence was increased from 15 to 25 J/cm2 at 10.7 Pa N2 pressure. X-ray diffraction showed NbNx films with peaks that correspond to δ-NbN cubic and β-Nb2N hexagonal phases in addition to the δ'-NbN hexagonal phase. Finally, increasing the laser fluence resulted in NbNx films with larger grain sizes.

  11. Designing nanoscale constructs from atomic thin sheets of graphene, boron nitride and gold nanoparticles for advanced material applications

    NASA Astrophysics Data System (ADS)

    Jasuja, Kabeer

    2011-12-01

    Nanoscale materials invite immense interest from diverse scientific disciplines as these provide access to precisely understand the physical world at their most fundamental atomic level. In concert with this aim of enhancing our understanding of the fundamental behavior at nanoscale, this dissertation presents research on three nanomaterials: Gold nanoparticles (GNPs), Graphene and ultra-thin Boron Nitride sheets (UTBNSs). The three-fold goals which drive this research are: incorporating mobility in nanoparticle based single-electron junction constructs, developing effective strategies to functionalize graphene with nano-forms of metal, and exfoliating ultrathin sheets of Boron Nitride. Gold nanoparticle based electronic constructs can achieve a new degree of operational freedom if nanoscale mobility is incorporated in their design. We achieved such a nano-electromechanical construct by incorporating elastic polymer molecules between GNPs to form 2-dimensional (2-D) molecular junctions which show a nanoscale reversible motion on applying macro scale forces. This GNP-polymer assembly works like a molecular spring opening avenues to maneuver nano components and store energy at nano-scale. Graphene is the first isolated nanomaterial that displays single-atom thickness. It exhibits quantum confinement that enables it to possess a unique combination of fascinating electronic, optical, and mechanical properties. Modifying the surface of graphene is extremely significant to enable its incorporation into applications of interest. We demonstrated the ability of chemically modified graphene sheets to act as GNP stabilizing templates in solution, and utilized this to process GNP composites of graphene. We discovered that GNPs synthesized by chemical or microwave reduction stabilize on graphene-oxide sheets to form snow-flake morphologies and bare-surfaces respectively. These hybrid nano constructs were extensively studied to understand the effect and nature of GNPs

  12. SHG spectroscopy of gallium nitride thin films on sapphire with ultrashort pulses

    NASA Astrophysics Data System (ADS)

    Angerer, William Edward

    We present results of ultrafast second-harmonic generation spectroscopy of GaN/Alsb2Osb3 samples. We develop a formalism to calculate the nonlinear response of thin nonlinear films excited by an ultrashort laser source (Ti:Alsb2Osb3), and we use this formalism to extract chisbsp{zxx}{(2)}(omega=2omegasb{o}) and chisbsp{xzx}{(2)}(omega=2omegasb{o}) from our SHG measurements over a two photon energy range of 2.6-3.4 eV. By comparing spectra from several samples, we find a weak sub-band gap enhancement of chisbsp{zxx}{(2)}(omega=2omegasb{o}) at a two photon energy of 2.80 eV that is not present in chisbsp{xzx}{(2)}(omega=2omegasb{o}). This enhancement is independent of the carrier concentration, intentional doping, and presence of the "yellow luminescence band" defects. This feature may result from a three photon process involving a midgap defect state. We analyze three photon processes that include a defect state with group theory and demonstrate that several processes contribute to chisbsp{zxx}{(2)}(omega=2omegasb{o}) but not to chisbsp{xzx}{(2)}(omega=2omegasb{o}). In addition, we determined sample orientational miscuts by rotational SHG, and we found that these miscuts do not generate strain induced interface states. We determined a Sellmeier dispersion relationship for the index of refraction of GaN by a novel light transmission method, and we report on photoluminescence of our GaN/Alsb2Osb3 samples. In a second project we have designed and built a nonlinear optical microscope. We have used the new tool to perform preliminary investigations of the nonlinear optical properties of carbon nanoropes. We suggest that nonlinear optical microscopy is a potentially useful technique for analyzing carbon nanotube symmetry, as well as in studies of other heterogeneities. Finally, we place an upper limit on the dominant second order hyperpolarizability, alphasbsp{zzz}{(2)}, of carbon nanotubes based on our nonlinear optical microscopy measurements.

  13. Dielectric Investigation of Parylene D Thin Films: Relaxation and Conduction Mechanisms.

    PubMed

    Mokni, M; Kahouli, A; Jomni, F; Garden, J-L; André, E; Sylvestre, A

    2015-09-01

    Parylene is a generic name indicating a family of polymers with the basic chemical structure of poly-p-xylylene. Parylene N and Parylene C are the most popular for applications. Curiously, Parylene D (poly( dichloro-p-xylylene), (C8H6Cl2)) was forgotten for applications. This report is the consequence of a later availability of a commercial dimer of Parylene D and also to the recent advent of fluorinated Parylenes allowing extending applications at higher temperatures. In our work, from a dielectric analysis, we present the potentialities of Parylene D for applications particularly interesting for integration in organic field-effect transistors. Dielectric and electrical properties, macromolecular structures, and dynamics interaction with electric field as a function of frequency and temperature are studied in 5.8 μm thick Parylene D grown by chemical vapor deposition. More exactly, the dielectric permittivity, the dissipation factor, the electrical conductivity, and the electric modulus of Parylene D were investigated in a wide temperature and frequency ranges from -140 to +350 °C and from 0.1 Hz to 1 MHz, respectively. According to the temperature dependence of the dielectric permittivity, Parylene D has two different dielectric responses. It is retained as a nonpolar material at very low temperature (like Parylene N) and as a polar material at high temperature (like parylene C). The dissipation factor shows the manifestation of two relaxations mechanisms: γ and β at very low and high temperatures, respectively. The γ relaxation is assigned to the local motions of the C-H end of the chains when the cryogenic temperature range is approached. A broad peak in tan δ is assigned to the β relaxation. It corresponds to rotational motion of some polar C-Cl groups. For temperature above 260 °C a mechanism of Maxwell-Wagner-Sillars polarization at the amorphous/crystalline interfaces was identified with two activation energies of Ea1 = 2.12 eV and Ea2 = 3.8 e

  14. Evolution of stress and microstructure in silicon-doped aluminum gallium nitride thin films

    NASA Astrophysics Data System (ADS)

    Manning, Ian C.

    The present work examines the effects of the Si incorporation on the stress evolution of AlxGa1-xN thin films deposited using metalorganic chemical vapor deposition. Specifically, tensile stress generation was evaluated using an in situ wafer curvature measurement technique, and correlated with the inclination of edge-type threading dislocations observed with transmission electron microscopy (TEM). This microstructural process had been theorized to relax compressive strain with increasing film thickness by expanding the missing planes of atoms associated with the dislocations. Prior work regarded dislocation bending as being the result of an effective climb mechanism. In a preliminary investigation, the accuracy of the model derived to quantify the strain induced by dislocation inclination was tested. The relevant parameters were measured to calculate a theoretical stress gradient, which was compared with the gradient as extract from experimental stress data. The predicted value was found to overestimate the measured value. It was also confirmed during the preliminary investigation that Si incorporation alone was sufficient to initiate dislocation bending. The overestimation of the stress gradient yielded by the prediction of the model was then addressed by exploring the effects of dislocation annihilation and fusion reactions occurring during film growth. Si-doped Al0.42Ga 0.58N layers exhibiting inclined threading dislocations were grown to different thicknesses. The dislocation density at the surface of each sample was then measured using plan-view TEM, and was found to be inversely proportional to the thickness. As the original model assumed a constant dislocation density, applying the correction for its reduction yielded a better prediction of the stress evolution. In an attempt to extend the predictive capabilities of the model beyond the single composition examined above, and to better understand the interaction of Si with the host AlxGa1-xN lattice, several

  15. Effects of the interfacial layer on electrical characteristics of Al 2O 3/TiO 2/Al 2O 3 thin films for gate dielectrics

    NASA Astrophysics Data System (ADS)

    Kim, Chang Eun; Yun, Ilgu

    2012-01-01

    Effects of thermal annealing on the electrical properties of Al2O3/TiO2/Al2O3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al2O3-TiO2 composite and interfacial layer including SiOx in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

  16. Investigation of tow-step electrical degradation behavior in a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chen, Fa-Hsyang; Her, Jim-Long; Hung, Meng-Ning; Pan, Tung-Ming

    2013-07-01

    We investigate the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Sm2O3 gate dielectrics. Tow-step electrical degradation behavior in Sm2O3 a-IGZO TFT devices was found under high gate and drain voltage stress during 1000 s. A typical small positive shift followed by an unusual negative shift of threshold voltage is characterized in our TFT devices. We believe that the positive shift of the threshold voltage is due to charge trapping in the gate dielectric and/or at the channel/dielectric interfaces, while the negative shift of threshold voltage can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel. We suggested that the amount of oxygen vacancies and the quality of the high-κ gate dielectric probably affect the degradation behavior of a-IGZO TFT devices.

  17. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    NASA Astrophysics Data System (ADS)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  18. Collaboration of the NASA Glenn Research Center and Rolls-Royce Developed Thin Film Multilayered Dielectrics for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Fralick, Gustave C.; Busfield, A. Rachel; Thomas, Valarie D.; Blaha, Charles A.

    2003-01-01

    The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensors and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high-temperature ceramics, a sequence of insulating layers was devised that (1) prevents pinholes from forming completely through the insulator and (2) maintains high electrical resistivity at high temperatures. The total thickness is only a fraction of that needed for conventional insulating techniques. The Sensors and Electronics Technology Branch of the NASA Glenn Research Center has an in-house effort to develop thin film sensors for surface measurement in propulsion system research. Thin film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner (less than 10 mm thick) than wire or foil sensors. The thin film sensors are thus much less disturbing to the operating environment and have a minimal impact on the physical characteristics of the supporting component. To further this research, NASA Glenn and Rolls-Royce (Derby, UK), with assistance from the Ohio Aerospace Institute (OAI) and the Akima Corporation, pursued a joint investigation using multilayered thin film dielectrics as a reliable insulator in harsh environments. The use of a multilayered scheme is thought to be promising for the fabrication of electrically insulating thin films. A major cause of conduction in thin film dielectrics is the presence of defects, such as pinholes, that propagate through the film to the underlying substrate surface. By alternating the insulating material, each new growth pattern would deviate from the previous one, eliminating direct pathways for conduction to the substrate. The film depositions and testing were conducted in the Instrument

  19. In situ synthesis of Ni(OH)2 nanobelt modified electroactive poly(vinylidene fluoride) thin films: remarkable improvement in dielectric properties.

    PubMed

    Thakur, Pradip; Kool, Arpan; Bagchi, Biswajoy; Hoque, Nur Amin; Das, Sukhen; Nandy, Papiya

    2015-05-21

    A facile and low cost synthesis of Ni(OH)2 nanobelt (NB) modified electroactive poly(vinylidene fluoride) (PVDF) thin films with excellent dielectric properties has been reported via in situ formation of Ni(OH)2 NBs in the PVDF matrix. The formation and morphology of the NBs are confirmed by UV-visible spectroscopy and field emission scanning electron microscopy respectively. A remarkable improvement in electroactive β phase nucleation (∼82%) and the dielectric constant (ε ∼ 3.1 × 10(6) at 20 Hz) has been observed in the nanocomposites (NCs). The interface between the NBs and the polymer matrix plays a crucial role in the enhancement of the electroactive β phase and the dielectric properties of thin films. Strong interaction via hydrogen bonds between Ni(OH)2 NBs and the PVDF matrix is the main reason for enhancement in β phase crystallization and improved dielectric properties. The NC thin films can be utilized for potential applications as high energy storage devices like supercapacitors, solid electrolyte batteries, self-charging power cells, piezoelectric nanogenerators, and thin film transistors and sensors. PMID:25915166

  20. Reduction of scattering using thin all-dielectric shells designed by stochastic optimizer

    SciTech Connect

    Ladutenko, Konstantin; Peña-Rodríguez, Ovidio; Melchakova, Irina; Yagupov, Ilya; Belov, Pavel

    2014-11-14

    Adaptive differential evolution method has been used for optimization of all-dielectric multilayer coatings in order to reduce total scattering from spherical targets. The optimal refractive index profiles have been found for various sizes of targets and thicknesses of coatings. Few profile types that appear to be optimal for various geometrical parameters have been identified. Scattering of the target with diameter of 0.75 λ has been reduced by 85% using 0.16 λ thick coating formed by isotropic dielectric materials. For larger targets, scattering reduction becomes smaller, but it still reaches 50% for targets with the diameter of 1.5 λ. The obtained designs provide a route to implement cloaking without the use of magnetic and anisotropic metamaterials.

  1. Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

    NASA Astrophysics Data System (ADS)

    Huitema, L.; Cernea, M.; Crunteanu, A.; Trupina, L.; Nedelcu, L.; Banciu, M. G.; Ghalem, A.; Rammal, M.; Madrangeas, V.; Passerieux, D.; Dutheil, P.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.

    2016-04-01

    We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO3-0.08BaTiO3 (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20 V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band.

  2. Dielectric response and electric properties of organic semiconducting phthalocyanine thin films

    NASA Astrophysics Data System (ADS)

    Saleh, A. M.; Hraibat, S. M.; M-L. Kitaneh, R.; Abu-Samreh, M. M.; Musameh, S. M.

    2012-08-01

    The dielectric function of some phthalocyanine compounds (ZnPc, H2Pc, CuPc, and FePc) were investigated by analyzing the measured capacitance and loss tangent data. The real part of the dielectric constant, ɛ1, varies strongly with frequency and temperature. The frequency dependence was expressed as: ɛ1 = Aωn, where the index, n, assumes negative values (n < 0). In addition, the imaginary part of the dielectric constant, ɛ2, is also frequency and temperature dependent. Data analysis confirmed that ɛ2 = Bωm with values of m less than zero. At low frequencies and all temperatures, a strong dependence is observed, while at higher frequencies, a moderate dependence is obvious especially for the Au-electrode sample. Qualitatively, the type of electrode material had little effect on the behavior of the dielectric constant but did affect its value. Analysis of the AC conductivity dependence on frequency at different temperatures indicated that the correlated barrier hopping (CBH) model is the most suitable mechanism for the AC conduction behavior. Maximum barrier height, W, has been estimated for ZnPc with different electrode materials (Au and Al), and had values between 0.10 and 0.9 eV For both electrode types, the maximum barrier height has strong frequency dependence at high frequency and low temperatures. The relaxation time, τ, for ZnPc and FePc films increases with decreasing frequency. The activation energy was derived from the slopes of τ versus 1/T curves. At low temperatures, an activation energy value of about 0.01 eV and 0.04 eV was estimated for ZnPc and FePc, respectively. The low values of activation energy suggest that the hopping of charge carriers between localized states is the dominant mechanism.

  3. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

    DOEpatents

    Auciello, Orlando

    2010-05-11

    A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

  4. Sub-THz complex dielectric constants of smectite clay thin samples with Na+/Ca++ ions

    NASA Astrophysics Data System (ADS)

    Rahman, Rezwanur; McCarty, Douglas K.; Prasad, Manika

    2015-09-01

    We implement a technique to characterize the electromagnetic properties at frequencies 100 to 165 GHz (3 cm-1 to 4.95 cm-1) of oriented smectite samples using an open cavity resonator connected to a submillimeter wave VNA (Vector Network Analyzer). We measured dielectric constants perpendicular to the bedding plane on oriented Na+ ion and Ca++ ion stabilized smectite samples deposited on a glass slide at ambient laboratory conditions (room temperature and room light). The clay layer is much thinner (˜30 μm) than the glass substrate (˜2.18 mm). The real part of dielectric constant, ɛre, is essentially constant over this frequency range but is larger in Na+ ion than in Ca++ ion infused clay. The total electrical conductivity (associated with the imaginary part of dielectric constant, ɛim) of both samples increases monotonically at lower frequencies (<110 GHz) but shows rapid increase for Na+ ions in the regime > 110 GHz. The dispersion of the samples display a dependence on the ionic strength in the clay interlayers, i.e., ζ potential in the Stern layers.

  5. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

    SciTech Connect

    Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas; Jensen, Jens; Persson, Per; Matloub, Ramin; Muralt, Paul; Kim, Yunseok; Birch, Jens; Hultman, Lars

    2012-01-01

    Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

  6. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

    PubMed Central

    Sercombe, D.; Schwarz, S.; Pozo-Zamudio, O. Del; Liu, F.; Robinson, B. J.; Chekhovich, E. A.; Tartakovskii, I. I.; Kolosov, O.; Tartakovskii, A. I.

    2013-01-01

    Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SixNy, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials. PMID:24336152

  7. Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications.

    PubMed

    Guo, Lei; Qin, Xiangdong; Zaera, Francisco

    2016-03-01

    A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates. PMID:26956428

  8. Organic thin film transistor with poly(4-vinylbiphenyl) blended 6,13-bis(triisopropylsilylethynyl)pentacene on propyleneglycolmonomethyletheracetate dielectric surface.

    PubMed

    Kwon, Jae-Hong; Shin, Sang-Il; Choi, Jinnil; Chung, Myung-Ho; Oh, Tae-Yeon; Kim, Kyung-Hwan; Choi, Dong Hoon; Ju, Byeong-Kwon

    2010-05-01

    This paper presents the latest results in the use of soluble materials, such as organic semiconductors (OSCs) and gate-dielectrics, for simplified processing of organic thin film transistors (OTFTs). In this work, the fabrication of a solution-processed OTFT, with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and TIPS-pentacene mixed with poly(4-vinylbiphenyl) (PVBP) as the OSC, and propyleneglycolmonomethyletheracetate (PGMEA) as the gate-dielectric, is described. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. Device performance characteristics have been obtained, including the charge carrier mobility (micro) of 1.47 x 10(-2) cm2Ns, threshold voltage (V(T)) of -11.36 V, current on/off ratio (I(ON/OFF)) of 1.08 x 10(4), sub-threshold swing (SS) of 2.13 V/decade for an OTFT with PVBP blended TIPS-pentacene and micro of 1.39 x 10(-4) cm2/Vs, V(T) of 0.7 V, I(ON/OFF) of 1.64 x 10(3), SS of 4.21 V/decade for an OTFT without polymer binder, individually. PMID:20358921

  9. Impact of reductive N2/H2 plasma on porous low-dielectric constant SiCOH thin films

    NASA Astrophysics Data System (ADS)

    Cui, Hao; Carter, Richard J.; Moore, Darren L.; Peng, Hua-Gen; Gidley, David W.; Burke, Peter A.

    2005-06-01

    Porous low-dielectric constant (low-κ) SiCOH thin films deposited using a plasma-enhanced chemical-vapor deposition have been comprehensively characterized before and after exposure to a reactive-ion-etch-type plasma of N2 and H2 chemistry. The low-κ film studied in this work is a carbon-doped silicon oxide film with a dielectric constant (κ) of 2.5. Studies show that a top dense layer is formed as a result of significant surface film densification after exposure to N2/H2 plasma while the underlying bulk layer remains largely unchanged. The top dense layer is found to seal the porous bulk SiCOH film. SiCOH films experienced significant thickness reduction, κ increase, and leakage current degradation after plasma exposure, accompanied by density increase, pore collapse, carbon depletion, and moisture content increase in the top dense layer. Both film densification and removal processes during N2/H2 plasma treatment were found to play important roles in the thickness reduction and κ increase of this porous low-κ SiCOH film. A model based upon mutually limiting film densification and removal processes is proposed for the continuous thickness reduction during plasma exposure. A combination of surface film densification, thickness ratio increase of top dense layer to bulk layer, and moisture content increase results in the increase in κ value of this SiCOH film.

  10. Dielectric relaxation and conduction mechanisms in sprayed TiO2 thin films as a function of the annealing temperature

    NASA Astrophysics Data System (ADS)

    Juma, Albert; Acik, Ilona Oja; Mere, Arvo; Krunks, Malle

    2016-04-01

    The electrical properties of TiO2 thin films deposited by chemical spray pyrolysis onto Si substrates were investigated in the metal-oxide-semiconductor (MOS) configuration using current-voltage characteristics and impedance spectroscopy. The electrical properties were analyzed in relation to the changes in microstructure induced during annealing in air up to a temperature of 950 °C. Anatase to rutile transformation started after annealing at 800 °C, and at 950 °C, only the rutile phase was present. The dielectric relaxation strongly depended upon the microstructure of TiO2 with the dielectric constant for the anatase phase between 45 and 50 and that for the rutile phase 123. Leakage current was reduced by three orders of magnitude after annealing at 700 °C due to the densification of the TiO2 film. A double-logarithmic plot of the current-voltage characteristics showed a linear relationship below 0.12 V consistent with Ohmic conduction, while space-charge-limited conduction mechanism as described by Child's law dominated for bias voltages above 0.12 V.

  11. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    NASA Astrophysics Data System (ADS)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  12. Dielectric resonator for measuring the magnetic penetration depth at low temperature in high-Tc superconducting thin films

    NASA Astrophysics Data System (ADS)

    Mourachkine, A. P.

    1995-11-01

    Knowledge of magnetic penetration depth λ(T) at low temperatures allows one to determine the pairing state in the superconductors. A simple method for the evaluation of λ(T) of small (˜1 cmט1 cm), flat, high-Tc superconductive samples at low T is discussed. The resolution of the method is a few Å. In addition to high resolution, the method has several advantages including nondestructive analysis, flexibility in sample size, and minimal requirements on the dielectric resonator. The current distribution within the sample being tested can also be accurately calculated, the experimental setup is convenient, and the procedure is comparatively rapid and can be performed in the necktube of a liquid-helium storage Dewar. The measurements for YBCO thin films have been performed at 14.4 GHz.

  13. High Resolution X-ray Diffraction Characterization of III-Nitride Semiconductors: Bulk Crystals and Thin Films

    NASA Astrophysics Data System (ADS)

    Bobea, Milena Rebeca

    As III-nitrides continue to evolve into a homoepitaxial growth scenario, the development of non-traditional metrologies for the proper study of III-nitride single crystals and homoepitaxial thin films becomes critical. To this purpose, the work presented in this dissertation has focused on the development and application of suitable high resolution X-ray diffraction (HRXRD) methods, desirable for their sensitivity, accuracy and non-destructive nature. HRXRD techniques were explored and developed for the identification of polishing-induced damage in processed III-nitride single crystals, the structural analysis of non-polar AlN homoepitaxial films grown on AlN single crystals and the assessment of alloy film characteristics of AlxGa1-xN epilayers deposited on AlN substrates. AlN and GaN substrates were treated to various degrees of mechanical polishing and chemical mechanical polishing (CMP). Gross damage created from aggressive polishing was readily quantified using X-ray rocking curve (XRC) peak broadening and diffuse scatter intensity. However, once the wafers were exposed to CMP treatment, it was found that the use of line scanning methods was unable to distinguish the effects of CMP time exposure on the crystal surface. Alternatively, the analysis of surface-related diffraction features recorded from on- and off-axis high-resolution reciprocal space maps (RSMs) allowed the classification of remnant damage in CMP-treated substrates as a function of CMP exposure time. By comparing the crystal truncation rod intensity and the pole diffuse scatter magnitude, differences at the near-surface regions of CMP-processed wafers were qualitatively and quantitatively measured. For AlN, the mapping of the (101¯3) reflection, observable under grazing incidence conditions, was introduced as an effective HRXRD method to analyze the crystal surface of AlN substrates using a laboratory source. HRXRD methods were employed on high-quality non-polar homoepitaxial AlN films grown on

  14. Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

    PubMed

    Li, X D; Chen, T P; Liu, Y; Leong, K C

    2014-09-22

    Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing. PMID:25321779

  15. Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

    NASA Astrophysics Data System (ADS)

    Matsubara, R.; Sakai, Y.; Nomura, T.; Sakai, M.; Kudo, K.; Majima, Y.; Knipp, D.; Nakamura, M.

    2015-11-01

    For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.

  16. Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

    2014-07-01

    BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

  17. Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

    NASA Astrophysics Data System (ADS)

    Snure, Michael; Paduano, Qing; Kiefer, Arnold

    2016-02-01

    Boron Nitride is a promising 2D dielectric material for use in numerous electronic applications. In order to realize this potential, a process for producing atomically thin layers on microelectronics-compatible substrates is desirable. In this paper we describe an approach to epitaxially grow few-layer sp2 BN directly on an insulating substrate, using metal-organic chemical vapor deposition (MOCVD). We also elucidate the effect of sapphire surface nitridation on the growth characteristics. We compare the effect of nitridation on the growth rate, surface morphology and structure across a wide range of V/III ratios. Depending on the V/III ratio, two different growth modes were identified: at low V/III 3D island growth is dominant and at high V/III the growth transitions to a self-terminating mode. Under self-terminating growth a film thickness of 1.5 nm is typically achieved. Surface nitridation was found to improve nucleation, promoting self-terminating growth, and resulting in atomically smooth films. Reflection high energy electron diffraction (RHEED) patterns reveal the epitaxial relationship between BN and sapphire to be [1-100]‖[11-20] and [0001]‖[0001]. Growth at low V/III ratios without surface nitridation produced films with large hexagonal holes, which could not be completely filled by extending the growth time. Through surface nitridation, these holes were eliminated, producing continuous smooth films.

  18. Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films.

    PubMed

    Zhu, Xiao Na; Gao, Ting Ting; Xu, Xing; Liang, Wei Zheng; Lin, Yuan; Chen, Chonglin; Chen, Xiang Ming

    2016-08-31

    Highly oriented multilayered BaTiO3-(Ba,Ca)TiO3-CaTiO3 thin films were fabricated on Nb-doped (001) SrTiO3 (Nb:STO) substrates by pulsed laser deposition. The configurations of multilayered BaTiO3-(Ba,Ca)TiO3-CaTiO3 thin films are designed with the thickness ratio of 1:1:1 and 2:1:1 and total thickness ∼300 nm. Microstructural characterization by X-ray diffraction indicates that the as-deposited thin films are highly c-axis oriented and large in-plane strain is determined in BaTiO3 and CaTiO3 layers. Piezoresponse force microscopy (PFM) studies reveal an intense in-plane polarization component, whereas the out-of-plane shows inferior phase contrast. The optimized combination is found to be the BaTiO3-(Ba0.85Ca0.15)TiO3-CaTiO3 structure with combination ratio 2:1:1, which displays the largest domain switching amplitude under DC electric field, the largest room-temperature dielectric constant ∼646, a small dielectric loss of 0.03, and the largest dielectric tunability of ∼50% at 400 kV/cm. These results suggest that the enhanced dielectric and tunability performance are greatly associated with the large in-plane polarization component and domain switching. PMID:27514235

  19. Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

    NASA Astrophysics Data System (ADS)

    Dai, J. Y.; Lee, P. F.; Wong, K. H.; Chan, H. L. W.; Choy, C. L.

    2003-07-01

    Epitaxial yttrium-stabilized HfO2 thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550 °C. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si//(100)HfO2 and [001]Si//[001]HfO2. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion. X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO2 thin film on bare Si is via a direct growth mechanism without involving the reaction between Hf atoms and SiO2 layer. High-frequency capacitance-voltage measurement on an as-grown 40-Å yttrium-stabilized HfO2 epitaxial film yielded an effective dielectric constant of about 14 and equivalent oxide thickness to SiO2 of 12 Å. The leakage current density is 7.0×10-2 A/cm2 at 1 V gate bias voltage.

  20. A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

    NASA Astrophysics Data System (ADS)

    Maity, Niladri Pratap; Maity, Reshmi; Thapa, R. K.; Baishya, Srimanta

    2016-07-01

    In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k dielectric material, HfO2 on the current density model have been carried out. In this work, improvement in the results is brought in by taking into account the barrier height lowering due to the image force effect. The considered voltage range is from 0 to ψ1/e i.e., 0 < V < ψ1/e, where ψ1 is the barrier height at the interface of metal and the oxide. Initially we are neglecting the image force effect for a MOS device consisting asymmetric barrier. Later, image force effect of ultra thin oxide layer has been introduced for practical potential barrier by superimposing the potential barrier on the trapezoidal barrier. Theoretical predictions are compared with the results obtained by the 2-D numerical device simulator ATLAS and published experimental results. Excellent agreements among the three are observed.

  1. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    PubMed

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors. PMID:26451806

  2. Effect of phase transformation on optical and dielectric properties of pulsed laser deposited ZnTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Jain, Praveen K.; Salim, Mohammad; Kaur, Davinder

    2016-04-01

    Zinc titanate (ZnTiO3) ceramics were prepared by conventional solid state reaction method using ZnO and TiO2 in a molar ratio of 1:1 with optimized parameters. It was found that the sample sintered at 800 °C for 12 h exhibit single hexagonal phase of ZnTiO3. ZnTiO3 thin film have been deposited on ITO coated glass substrate using pulsed laser deposition (PLD) technique employing a KrF laser source (λ = 248 nm). In present work, the effect of substrate temperature, which leads to transformation of hexagonal phase to cubic phase, has been studied. The XRD pattern revealed that pure hexagonal phase of ZnTiO3 appear upto 400 °C and more increment in substrate temperature leads to transformation of hexagonal phase to cubic phase. We have observed the blue shift in absorption edge at lower temperature. When the substrate temperature increases from 300 to 400 °C the band gap decreases due to strong hexagonal phase, but more increment in substrate temperature increases the band gap causes by change of phase from hexagonal to cubic. The dielectric constant of ZnTiO3 thin film increases as the substrate temperature increases due to the enhancement in crystallinity and improved morphology.

  3. Infra-red spectral microscopy of standing-wave resonances in single metal-dielectric-metal thin-film cavity

    NASA Astrophysics Data System (ADS)

    Nath, Janardan; Panjwani, Deep; Khalilzadeh-Rezaie, Farnood; Yesiltas, Mehmet; Smith, Evan M.; Ginn, James C.; Shelton, David J.; Hirschmugl, Carol; Cleary, Justin W.; Peale, Robert E.

    2015-09-01

    Resonantly absorbing thin films comprising periodically sub-wavelength structured metal surface, dielectric spacer, and metal ground plane are a topic of current interest with important applications. These structures are frequently described as "metamaterials", where effective permittivity and permeability with dispersion near electric and magnetic resonances allow impedance matching to free space for maximum absorption. In this paper, we compare synchrotron-based infrared spectral microscopy of a single isolated unit cell and a periodic array, and we show that the resonances have little to do with periodicity. Instead, the observed absorption spectra of usual periodically structured thin films are best described as due to standing-wave resonances within each independent unit cell, rather than as due to effective optical constants of a metamaterial. The effect of having arrays of unit cells is mainly to strengthen the absorption by increasing the fill factor, and such arrays need not be periodic. Initial work toward applying the subject absorbers to room-temperature bolometer arrays is presented.

  4. Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

    NASA Astrophysics Data System (ADS)

    Vereecke, G.; Arnauts, S.; Van Doorne, P.; Kenis, K.; Onsia, B.; Verstraeten, K.; Schaekers, M.; Van Hoeymissen, J. A. B.; Heyns, M. M.

    2001-11-01

    The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence has been evaluated with samples contaminated with diluted standard solutions of eight metals (Ca, V, Cr, Fe, Ni, Cu, Ta, W). The nitride matrix was removed by a decomposition step with HF vapor at ambient conditions followed by the vaporization of the product at a temperature higher than 240°C. The recovery of added metals was determined first directly after vaporization and secondly after preconcentration by the droplet collection (DC) method. The recovery of metals after vaporization at a temperature of 300±50°C was generally close to 100%, except for Cu whose recovery was approximately 40%. The efficiency of the DC step was approximately 50% for most metals but only 10-20% for Cu and Cr. Thus for most metals the total recovery was close to 50%, which is acceptable for analytical purpose. The recovery of Cu and Cr was studied in more detail considering the influence of the thickness of the nitride film, the vaporization temperature, and the composition of the DC solution. The total recovery of Cu increased from approximately 10 to 40% by lowering the temperature of the vaporization step and using a more concentrated DC solution. The recovery of Cr by DC was markedly influenced by the thickness of the nitride film with no great benefit of using a more concentrated DC solution.

  5. Synthesis and Evaluation of Self-Assembled Azido Monolayer as a Novel Dielectric Layer for Fabricating Pentacene-Based Organic Thin Film Transistors.

    PubMed

    Yeh, Je-Yuan; Tsai, Tzung-Da; Kuo, An Tsung; Chou, Ying-Shiun; Liou, Ying-Shian; Chang, Zhao-You; Tsiang, Raymond Chien-Chao; Guo, Tzung-Fang; Chang, Chien-Hsiang

    2015-05-01

    Self-assembled 3-azidopropyltriethoxysilane monolayer (SAM) is used as a dielectric layer to modify the interface between the silicon dioxide wafer and the pentacene semiconductor layer in an organic thin film transistor (OTFT), Au/pentacene/3-azidopropyltriethoxysilane/SiO2/Si. Compared to the commonly used alkyl siliane C18 dielectric, 3-azidopropyltriethoxysilane which possesses stable formal charges is far more effective in increasing the ON/OFF ratio of OTFT device with an improvement of nearly three orders of magnitude. Analysis and measurements reported in this paper have illustrated for the first time the improvement of OTFT performance by a SAM compound with stable formal charges. PMID:26504992

  6. Fabrication and characterization of micromachined dielectric thin films and temperature sensors using thermoluminescence

    NASA Astrophysics Data System (ADS)

    Kim, Sangho Sam

    High-power laser technology has a number of applications, whether for the military (i.e., anti-missile weaponry) or for material processing, medical surgery, laser-induced nuclear fusion, and high-density data storage. However, external obstacles could cause a laser to problematically change its direction. Optical components such as mirrors already address this problem by deflecting a laser beam, but can be damaged easily due to the intensity of the laser. Therefore, this dissertation examines how to improve reliability of high power laser application systems by three significant standards. First, we demonstrate that an atomic layer deposition (ALD) of Al2O3 can stabilize novel dielectric optical mirrors composed of SiO2 nanorods, whose porosity makes it attractive for use as a low refractive index material. Such a deposition can stabilize material properties in dry versus humid atmospheres, where both the refractive index and coefficient of thermal expansion (CTE) vary dramatically. This encapsulation ability is demonstrated in dielectric multilayers as a Distributed Bragg Reflector (DBR). Second, we show that the difference in hydroxyl signatures of micromachined dielectric membranes can make detection of optical materials' laser damage more accurate. This signature difference, appearing as the decrease in post-laser absorption peaks associated with hydroxyl groups (OH), is measured by Fourier transform infrared spectroscopy and corresponds to regions of high fluence from a Nd:YAG laser. This detection technique will be useful to determine the lifespan of the optical components used in a high power laser. Third, we find that heterogeneous thermoluminescent (TL) multilayers composed of LiF:Mg,Ti and CaF2:Dy with Kapton as an interlayer can enhance reconstruction of laser heating events through thermal gradients that penetrate deep into a material, thereby preserving memory of the temperature history of the surface. Using the finite-difference time-domain method

  7. Dielectric particle and void resonators for thin film solar cell textures.

    PubMed

    Mann, Sander A; Grote, Richard R; Osgood, Richard M; Schuller, Jon A

    2011-12-01

    Using Mie theory and Rigorous Coupled Wave Analysis (RCWA) we compare the properties of dielectric particle and void resonators. We show that void resonators-low refractive index inclusions within a high index embedding medium-exhibit larger bandwidth resonances, reduced peak scattering intensity, different polarization anisotropies, and enhanced forward scattering when compared to their particle (high index inclusions in a low index medium) counterparts. We evaluate amorphous silicon solar cell textures comprising either arrays of voids or particles. Both designs support substantial absorption enhancements (up to 45%) relative to a flat cell with anti-reflection coating, over a large range of cell thicknesses. By leveraging void-based textures 90% of above-bandgap photons are absorbed in cells with maximal vertical dimension of 100 nm. PMID:22273965

  8. Dielectric studies of boron sub phthalocyanine chloride thin films by admittance spectroscopic techniques

    NASA Astrophysics Data System (ADS)

    Kalia, Sameer; Mahajan, Aman; Neerja, Sharma, Anshul Kumar; Kumar, Sanjeev; Bedi, R. K.

    2016-05-01

    The dielectric properties of Boron Sub Phthalocyanine Chloride (Cl-SubPc) thermally deposited on ITO substrate have been studied using admittance spectroscopic techniques. The I-V and capacitance -frequency (C-F) studies at various bias voltages reveal that the mobility of charge carriers decrease with bias voltage, however the conduction phenomenon still remain hopping in nature. From the differential susceptance curve, the contribution of the Schottky barrier contact in the charge carrier concentration was found to be absent. The mobility of charge carriers have been determined using differential susceptance variation and from the phase of admittance curve. The values obtained in two cases have been found to be in agreement with each other.

  9. The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Sun, Xiaohua; Li, Xiuneng; Hou, Shuang; Huang, Caihua; Zou, Jun; Li, Meiya; Peng, Tianyou; Zhao, Xing-zhong

    2014-03-01

    Mg doped Pb0.3Sr0.7TiO3 (PST) thin films were fabricated by the sol-gel method on a Pt/Ti/SiO2/Si substrate. The microstructure, surface morphology, dielectric and tunable properties of PST thin films were investigated as a function of Mg concentration. It is found that proper Mg doping dramatically improves the dielectric loss (0.0088 @ 1 MHz), furthermore, the crystallinity, dielectric constant, and tunability of films simultaneously decrease with the increase of Mg content. The 2 mol% Mg doped PST thin film shows the highest figure of merit (FOM) value of 36.8 for its the smallest dielectric loss and upper tunability. The dependence of Rayleigh coefficient on the doping concentration was examined, which indicated that the reduction of dielectric constant and tunability of films should be related to the - defect dipoles pinning the domain wall motion of residual polar clusters in PST.

  10. Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics.

    PubMed

    Stemmer, S; Chen, Z Q; Zhu, W J; Ma, T P

    2003-04-01

    We have used conventional high-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia-based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as-deposited film is amorphous with a very thin (approximately 0.5 nm) interfacial SiOx layer. The film partially crystallizes after annealing at 700 degrees C and the interfacial SiO2-like layer increases in thickness by oxygen diffusion through the Hf-aluminate layer and oxidation of the silicon substrate. Oxygen K-edge EELS fine-structures are analysed for both films and interpreted in the context of the films' microstructure. We also discuss valence electron energy-loss spectra of these ultrathin films. PMID:12694419

  11. Dielectric gratings for wide-angle, broadband absorption by thin film photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Esteban, R.; Laroche, M.; Greffet, J. J.

    2010-11-01

    Optical management is essential to increase absorption in thin photovoltaic cells. In this article, full electromagnetic simulations show that a back mirror and a one-dimensional front SiC sawtooth grating of ˜1 μm dimensions can significantly increase absorption in a thin layer under light concentration. A 50 nm thick GaSb active layer in the described configuration absorbs ˜66% of the incident solar photons above the band gap for a concentration equivalent to a numerical aperture NA=1/√2 . This absorption represents a ˜76% or 26% increase over the same structure but with the grating removed or substituted by an ideal antireflection coating, respectively.

  12. High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

    NASA Astrophysics Data System (ADS)

    Tewari, Amit; Gandla, Srinivas; Pininti, Anil Reddy; Karuppasamy, K.; Böhm, Siva; Bhattacharyya, Arup R.; McNeill, Christopher R.; Gupta, Dipti

    2015-09-01

    This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of -1.4 V (operating voltage: 0 to -4 V) together with a mobility of 1.9 cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ ˜ 20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm.

  13. Superior dielectric properties for template assisted grown (100) oriented Gd{sub 2}O{sub 3} thin films on Si(100)

    SciTech Connect

    Roy Chaudhuri, Ayan Osten, H. J.; Fissel, A.

    2014-01-06

    We report about the single crystalline growth and dielectric properties of Gd{sub 2}O{sub 3}(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd{sub 2}O{sub 3}. Unusually, high dielectric constant values (∼23–27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd{sub 2}O{sub 3}/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance.

  14. Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating

    NASA Astrophysics Data System (ADS)

    Yang, Chanwoo; Hong, Kipyo; Jang, Jaeyoung; Chung, Dae Sung; An, Tae Kyu; Choi, Woon-Seop; Eon Park, Chan

    2009-11-01

    We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58 nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1 cm2 V-1 s-1, which was higher by a factor of ~8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.

  15. Measurement of the thermal conductivity of dielectric thin solid films with a thermal comparator

    SciTech Connect

    Amsden, C.A.; Gilman, S.E.; Jacobs, S.D.; Torok, J.S.

    1988-04-01

    Low thermal conductivity has important implications for electric and optical applications, where heat deposited in a thin layer must be dissipated to prevent damage. Models which account for thermal transport in thin film structures may have no predictive value if they employ bulk conductivity data. Most techniques utilized to measure the thermal conductivity of thin solid films are difficult and time consuming. The method we have developed is relatively rapid, nondestructive, and is capable of evaluating the samples in a conventional film on substrate geometry. Our thermal conductivity apparatus consists of a control and readout module, signal processing equipment, and an environmentally isolated sample chamber enclosing a sample stage. The commercial unit was converted into a high precision device by temperature controlling both the samples and the sample stage, and by performing averaging of the output signal. The thermal conductivity values obtained are below those of bulk solids. In addition, the conductivities seem to increase with increasing film thickness. Titania seems to have a higher thermal conductivity when deposited by ion-beam sputtering rather than electron-beam evaporation. Some of the electron-beam films were crazed, indicating high levels of stress. The effect of stress and crazing on thermal conductivity is not readily apparent. 11 refs., 1 fig., 1 tab.

  16. Two-level system dynamics in amorphous dielectrics probed with a dc electric field

    NASA Astrophysics Data System (ADS)

    Khalil, Moe; Gladchenko, Sergiy; Stoutimore, M. J. A.; Wellstood, F. C.; Osborn, K. D.

    2012-02-01

    We report loss in a thin-film dc electric-field tunable LC resonator built with superconducting aluminum and silicon nitride dielectric. To measure the loss we continually apply microwave power on resonance and monitor the transmitted power. At milli-Kelvin temperatures, loss is limited by two-level systems in the dielectric which are saturated with high microwave excitation power. Measurements show that a sudden change of applied dc field causes the dielectric loss to increase to the intrinsic low power loss tangent of the dielectric. We study the subsequent relaxation of the loss tangent caused by two-level system saturation and interactions. We discuss how this arises from the dynamics of a distribution of two-level system defects and compare it with new theoretical work on interacting two-level systems.

  17. Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

    NASA Astrophysics Data System (ADS)

    Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

    2015-10-01

    Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

  18. Effect of substrate temperature on the structural properties of magnetron sputtered titanium nitride thin films with brush plated nickel interlayer on mild steel

    NASA Astrophysics Data System (ADS)

    Subramanian, B.; Ashok, K.; Jayachandran, M.

    2008-12-01

    Thin films of titanium nitride (TiN) were prepared on mild steel (MS) by a physical vapor deposition (PVD) method namely direct current reactive magnetron sputtering. With the aim of improving the adhesion of TiN layer an additional Nickel interlayer was brush plated on the steel substrates prior to TiN film formation. The phase has been identified with X-ray diffraction (XRD) analysis, and the results show that the prominent peaks observed in the diffraction patterns correspond to the (1 1 1), (2 0 0) and (2 2 2) planes of TiN. Cross-sectional SEM indicated the presence of dense columnar structure. The mechanical properties (modulus and hardness) of these films were characterized by nanoindentation.

  19. Influence of titanium nitride interlayer on the morphology, structure and electrochemical performance of magnetron-sputtered lithium iron phosphate thin films

    NASA Astrophysics Data System (ADS)

    Bünting, A.; Uhlenbruck, S.; Dellen, C.; Finsterbusch, M.; Tsai, C.-L.; Sebold, D.; Buchkremer, H. P.; Vaßen, R.

    2015-05-01

    Pure LiFePO4 (LFP) thin films with different thicknesses are deposited at room temperature by a radio frequency (RF) magnetron-sputtering process. Ti foils with and without titanium nitride (TiN) coating as well as thermally oxidized Si wafers coated with Ti or TiN are used as substrates. In a subsequent annealing step, LiFePO4 thin films are crystallized at 500 °C. The interaction between Ti and LiFePO4 as well as between TiN and LiFePO4 is characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), secondary ion mass spectrometry (SIMS), cyclic voltammetry (CV) and galvanostatic measurements. A severe diffusion of Ti into LiFePO4 is found and leading to the formation of impurity phases which resulting in disturbing crystallization behaviour and rough surfaces. Moreover, 80 nm LiFePO4 thin films do not show the desired electrochemical characteristics when they are deposited on Ti foils directly. By using a TiN interlayer, the diffusion of Ti into LiFePO4 can be blocked resulting in smooth morphologies and improving crystallisation behaviour. Impurity phases do not develop and all samples exhibit the expected electrochemical characteristics. Therefore, TiN is a promising candidate for the use as a current collector in all-solid-state batteries with LiFePO4 electrodes.

  20. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    PubMed

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed. PMID:26927618

  1. Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Reuter, R.; Gherardi, N.; Benedikt, J.

    2012-11-01

    The continuous deposition of thin SiO2-like films by means of a dielectric barrier discharge with helium or nitrogen gas with small admixture of hexamethyldisiloxane (HMDSO) has been compared to a layer-by-layer deposition process, in which a very thin (0.7 nm and 2.5 nm) films are deposited from HMDSO precursor and treated afterwards by a pure N2 dielectric barrier discharge (DBD). Presented results clearly show that a carbon-free SiO2-like films can be obtained in the latter process, even if the continuous deposition led to carbon-rich material. Surface reactions of N2-DBD generated excited species (metastables, ions, or possibly photons) with surface bonded carbon are responsible for this effect. Moreover, OH-free and oxidation-resistant films can be produced even at the room substrate temperature.

  2. Hybrid dielectric light trapping designs for thin-film CdZnTe/Si tandem cells.

    PubMed

    Chung, H; Zhou, C; Tee, X T; Jung, K-Y; Bermel, P

    2016-07-11

    Tandem solar cells consisting of high bandgap cadmium telluride alloys atop crystalline silicon have potential for high efficiencies exceeding the Shockley-Queisser limit. However, experimental results have fallen well below this goal significantly because of non-ideal current matching and light trapping. In this work, we simulate cadmium zinc telluride (CZT) and crystalline silicon (c-Si) tandems as an exemplary system to show the role that a hybrid light trapping and bandgap engineering approach can play in improving performance and lowering materials costs for tandem solar cells incorporating crystalline silicon. This work consists of two steps. First, we optimize absorption in the crystalline silicon layer with front pyramidal texturing and asymmetric dielectric back gratings, which results in 121% absorption enhancement from a planar structure. Then, using this pre-optimized light trapping scheme, we model the dispersion of the CdxZn1-xTe alloys, and then adjust the bandgap to realize the best current matching for a range of CZT thicknesses. Using experimental parameters, the corresponding maximum efficiency is predicted to be 16.08 % for a total tandem cell thickness of only 2.2 μm. PMID:27410890

  3. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

    NASA Astrophysics Data System (ADS)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-10-01

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed

  4. Depth-selective 2D-ACAR studies on low- k dielectric thin films

    NASA Astrophysics Data System (ADS)

    Eijt, S. W. H.; van Veen, A.; Falub, C. V.; Galindo, R. Escobar; Schut, H.; Mijnarends, P. E.; de Theije, F. K.; Balkenende, A. R.

    2003-10-01

    Depth-selective 2D-ACAR investigations on ordered mesoporous silica thin films provide direct evidence that para-positronium ( p-Ps) created deep in the films can escape through a network of interconnected pores. The depth dependence of the escape fraction and of the average kinetic energy of non-thermally excited p-Ps is in quantitative agreement with Monte Carlo modeling, assuming classical collisions of p-Ps with the pore walls. The model provides insight in the shape of the angular correlation distributions and their sensitivity to, e.g., the effective wall mass Ms and pore dimensions.

  5. Investigation on the dielectric response of NdMnO3/LSAT thin films: Effect of 200 MeV Ag+15 ion irradiation

    NASA Astrophysics Data System (ADS)

    Udeshi, Malay; Vyas, Brinda; Trivedi, Priyanka; Katba, Savan; Ravalia, Ashish; Solanki, P. S.; Shah, N. A.; Asokan, K.; Ojha, S.; Kuberkar, D. G.

    2015-12-01

    We report the results of the modifications in structural and dielectric behaviour of pulsed laser deposited NdMnO3 manganite thin films grown on (1 0 0) single crystalline (LaAlO3)0.3 (Sr2AlTaO6)0.7 substrate irradiated with the 200 MeV Ag+15 ion irradiation having different fluences, ∼5 × 1010, ∼5 × 1011, ∼5 × 1012 ions/cm2. Structural strain was quantified using analysis of X-ray Diffraction data while Rutherford Backscattering measurements were performed on pristine NdMnO3 film to confirm the elemental composition, thickness and oxygen content. Dielectric measurements performed on all the irradiated films show that, the dielectric constant decreases with increase in ion fluence which has been correlated with the irradiation induced increase in strain at the film-substrate interface. The dielectric relaxation behaviour of pristine and irradiated NdMnO3 films have been understood by fitting the dielectric data using the Cole-Cole plots.

  6. Effect of oxygen content on the dielectric and ferroelectric properties of laser-deposited BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Li, C. L.; Chen, Z. H.; Zhou, Y. L.; Cui, D. F.

    2001-06-01

    BaTiO3 thin films were epitaxially grown on SrTiO3 (001) and LaNiO3/SrTiO3 substrates by pulsed laser deposition under different oxygen pressures. The oxygen content in the BaTiO3 films was determined using modified Rutherford backscattering. The structural characteristics of the films were analysed by x-ray diffraction θ/2θ scan, ϕ scan, and symmetric and asymmetric ω scans. The dielectric and ferroelectric properties of the films were measured by an impedance analyser and by a Sawyer-Tower circuit, respectively. It was found that the atomic ratio of O/Ba and Ti/Ba in the BaTiO3 films increases with oxygen pressure. The films fabricated in the intermediate oxygen pressure range of 2 to 10 Pa show the c-axis oriented tetragonal structure with a stoichiometry close to the ideal value. These films exhibit a relatively large dielectric constant, small dielectric loss and good ferroelectricity with a symmetric hysteresis loop. For growth at low oxygen pressure i.e. 0.1 Pa, the film with tetragonal c-axis orientation shows significant degradation in its dielectric properties. For a higher deposition oxygen pressure of 20 Pa, the film has tetragonal a-axis orientation and shows no ferroelectricity but has the largest dielectric constant.

  7. Improving the Performance of Organic Thin-Film Transistors by Ion Doping of Ethylene-Glycol-Based Self-Assembled Monolayer Hybrid Dielectrics.

    PubMed

    Dietrich, Hanno; Scheiner, Simon; Portilla, Luis; Zahn, Dirk; Halik, Marcus

    2015-12-22

    Tuning the electrostatics of ethylene-glycol-based self-assembled monolayers (SAMs) by doping with ions is shown. Molecular dynamics simulations unravel binding mechanisms and predict dipole strengths of the doped layers. Additionally, by applying such layers as dielectrics in organic thin-film transistors, the incorporated ions are proven to enhance device performance by lowering the threshold voltage and increasing conductivity. PMID:26524344

  8. Reduced stability of copper interconnects due to wrinkles and steps on hexagonal boron nitride substrates

    NASA Astrophysics Data System (ADS)

    Gao, Jian; Chow, Philippe K.; Thomas, Abhay V.; Lu, Toh-Ming; Borca-Tasciuc, Theodorian; Koratkar, Nikhil

    2014-09-01

    There is great scientific and technological interest in the use of chemical-vapor-deposition grown hexagonal boron nitride dielectric substrates for microelectronics applications. This interest stems from its superior heat spreading capability compared to silicon dioxide as well as the lack of surface dangling bonds or charge traps in hexagonal boron nitride which results in superior performance for graphene based electronics devices. However, surface heterogeneities, such as wrinkles or steps, are ubiquitous in such devices due to the fabrication and processing of chemical vapor deposition grown hexagonal boron nitride. In this study, we characterize the effect of such surface heterogeneities on the stability of copper interconnects used in microelectronics devices. Based on the theoretical thermo-physical properties of the constituent thin film layers, our simulations predict that copper interconnects deposited on hexagonal boron nitride can withstand ˜1.9 times more power than on a silicon dioxide substrate, due to its superior in-plane thermal conductivity. However, our electrical measurements reveal that copper wires melt and fail at consistently lower current densities on hexagonal boron nitride than on silicon dioxide. This was verified by testing in air as well as under vacuum. Scanning electron microscopy and atomic force microscopy characterization of the hexagonal boron nitride surface indicates that this contradictory result is due to nanoscale surface non-uniformities (i.e., wrinkles and steps) which are omnipresent in chemical-vapor-deposition grown and transferred hexagonal boron nitride films. Our results highlight the critical need for improved processing methods before large-scale microelectronics applications of chemical vapor deposition grown hexagonal boron nitride can be realized.

  9. Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors.

    PubMed

    Lee, Yunseong; Jeon, Woojin; Cho, Yeonchoo; Lee, Min-Hyun; Jeong, Seong-Jun; Park, Jongsun; Park, Seongjun

    2016-07-26

    We introduce a reliable and robust gate dielectric material with tunable dielectric constants based on a mesostructured HfxAlyO2 film. The ultrathin mesostructured HfxAlyO2 film is deposited on graphene via a physisorbed-precursor-assisted atomic layer deposition process and consists of an intermediate state with small crystallized parts in an amorphous matrix. Crystal phase engineering using Al dopant is employed to achieve HfO2 phase transitions, which produce the crystallized part of the mesostructured HfxAlyO2 film. The effects of various Al doping concentrations are examined, and an enhanced dielectric constant of ∼25 is obtained. Further, the leakage current is suppressed (∼10(-8) A/cm(2)) and the dielectric breakdown properties are enhanced (breakdown field: ∼7 MV/cm) by the partially remaining amorphous matrix. We believe that this contribution is theoretically and practically relevant because excellent gate dielectric performance is obtained. In addition, an array of top-gated metal-insulator-graphene field-effect transistors is fabricated on a 6 in. wafer, yielding a capacitance equivalent oxide thickness of less than 1 nm (0.78 nm). This low capacitance equivalent oxide thickness has important implications for the incorporation of graphene into high-performance silicon-based nanoelectronics. PMID:27355098

  10. The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O{sub 3} thin films

    SciTech Connect

    Chan, N. Y. Wang, Y.; Chan, H. L. W.; Wang, D. Y.; Dai, J. Y.

    2014-06-21

    Epitaxial (Ba{sub 1-x}Sr{sub x})(Zr{sub 0.1}Ti{sub 0.9})O{sub 3} (BSZT, x = 0 – 0.45) thin films were deposited on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.35} (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x ≥ 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba{sub 0.55}Sr{sub 0.45})(Zr{sub 0.1}Ti{sub 0.9})O{sub 3} thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications.

  11. The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films

    NASA Astrophysics Data System (ADS)

    Chan, N. Y.; Wang, D. Y.; Wang, Y.; Dai, J. Y.; Chan, H. L. W.

    2014-06-01

    Epitaxial (Ba1-xSrx)(Zr0.1Ti0.9)O3 (BSZT, x = 0 - 0.45) thin films were deposited on (LaAlO3)0.3(Sr2AlTaO6)0.35 (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x ≥ 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba0.55Sr0.45)(Zr0.1Ti0.9)O3 thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications.

  12. Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

    NASA Astrophysics Data System (ADS)

    Dhananjay; Nagaraju, J.; Krupanidhi, S. B.

    2006-02-01

    Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500 °C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (Tc) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at Tc is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (Ps) and coercive field (Ec) of 0.6 μC/cm2 and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

  13. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    PubMed Central

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system. PMID:27455911

  14. Characteristics of TiO2 Thin Film Surfaces Treated by Helium and Air Dielectric Barrier Discharge Plasmas

    NASA Astrophysics Data System (ADS)

    Kawakami, Retsuo; Niibe, Masahito; Takeichi, Atsushi; Mori, Yuta; Konishi, Masashi; Kotaka, Takuya; Matsunaga, Fumihiko; Takasaki, Toshihide; Kitano, Takanori; Miyazaki, Takahiro; Inaoka, Takeshi; Tominaga, Kikuo

    2012-08-01

    The characteristics of TiO2 thin film surfaces treated with He and air dielectric barrier discharge (DBD) plasmas at different gas pressures are investigated. There is a difference between the two DBD plasma characteristics: for He-DBD, which is an atmospheric pressure glow discharge (APGD), the breakdown voltage and discharge current hardly change with increasing gas pressure, whereas for air-DBD, which is basically a filamentary discharge, they increase with increasing gas pressure. There is also a difference between the characteristics of TiO2 surfaces treated with the two DBDs. The surface roughness for He-DBD is lower than the roughness of the as-grown surface, whereas that for air-DBD is higher. The surface hydrophilicity for He-DBD is more enhanced than the hydrophilicity of the as-grown surface regardless of UV irradiation. The hydrophilicity for air-DBD is dependent on UV irradiation. It is more enhanced with UV irradiation; it is not improved adequately without UV irradiation.

  15. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system.

  16. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    PubMed

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system. PMID:27455911

  17. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    SciTech Connect

    Zeng, F. W.; Lane, M. W.; Gates, S. M.

    2014-05-15

    Organosilicate glass (OSG) is often used as an interlayer dielectric (ILD) in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, G{sub TH}, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  18. High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics

    NASA Astrophysics Data System (ADS)

    Yuan, Guang Cai; Xu, Zheng; Gong, Cheng; Cai, Qin Jia; Lu, Zhi Song; Shi, Jing Sheng; Zhang, Fu Jun; Zhao, Su Ling; Xu, Na; Li, Chang Ming

    2009-04-01

    In this work, fabrication of organic thin film transistors (OTFTs) using a phenyltrimethoxysilane (PhTMS) modified SiO2 insulator greatly improves the device electrical properties over those with plain or octadecyltrichlorosilane (OTS) modified SiO2, particularly improves the carrier mobility, the subthreshold slope, and channel resistance resulted from reduced density of charge trapping states at the semiconductor/insulator interface. The pentacene OTFTs with modification from PhTMS (3.5‰ v/v) achieves carrier mobility of 1.03 cm2/V s, on/off current ratio of 1.98×105, and subthreshold slope of 0.20 V/decade. This work renders a new, simple approach to significantly improve the OTFT performance.

  19. Quantitative Determination of Dielectric Thin-Film Properties Using Infrared Emission Spectroscopy

    SciTech Connect

    Franke, J.E.; Haaland, D.M.; Niemczyk, T.M.; Zhang, S.

    1998-10-14

    We have completed an experimental study to investigate the use of infrared emission spectroscopy (IRES) for the quantitative analysis of borophosphosilicate glass (BPSG) thin films on silicon monitor wafers. Experimental parameters investigated included temperatures within the range used in the microelectronics industry to produce these films; hence the potential for using the IRES technique for real-time monitoring of the film deposition process has been evaluated. The film properties that were investigated included boron content, phosphorus content, film thickness, and film temperature. The studies were conducted over two temperature ranges, 125 to 225 *C and 300 to 400 *C. The later temperature range includes realistic processing temperatures for the chemical vapor deposition (CVD) of the BPSG films. Partial least squares (PLS) multivariate calibration methods were applied to spectral and film property calibration data. The cross-validated standard errors of prediction (CVSEP) fi-om the PLS analysis of the IRES spectraof21 calibration samples each measured at 6 temperatures in the 300 to 400 "C range were found to be 0.09 wt. `?40 for B, 0.08 wt. `%0 for P, 3.6 ~m for film thickness, and 1.9 *C for temperature. By lowering the spectral resolution fi-om 4 to 32 cm-l and decreasing the number of spectral scans fi-om 128 to 1, we were able to determine that all the film properties could be measured in less than one second to the precision required for the manufacture and quality control of integrated circuits. Thus, real-time in-situ monitoring of BPSG thin films formed by CVD deposition on Si monitor wafers is possible with the methods reported here.

  20. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

    SciTech Connect

    Akiyama, Morito; Kano, Kazuhiko; Teshigahara, Akihiko

    2009-10-19

    The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride (Sc{sub x}Al{sub 1-x}N) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 deg. C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 deg. C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth.

  1. MoS{sub 2} functionalization for ultra-thin atomic layer deposited dielectrics

    SciTech Connect

    Azcatl, Angelica; McDonnell, Stephen; Santosh, K.C.; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Lu, Ning; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.; Mordi, Greg I.; Kim, Jiyoung

    2014-03-17

    The effect of room temperature ultraviolet-ozone (UV-O{sub 3}) exposure of MoS{sub 2} on the uniformity of subsequent atomic layer deposition of Al{sub 2}O{sub 3} is investigated. It is found that a UV-O{sub 3} pre-treatment removes adsorbed carbon contamination from the MoS{sub 2} surface and also functionalizes the MoS{sub 2} surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS{sub 2} surface and provides nucleation sites for atomic layer deposition of Al{sub 2}O{sub 3}. The enhanced nucleation is found to be dependent on the thin film deposition temperature.

  2. Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

    PubMed

    Li, Xue; Niitsoo, Olivia; Couzis, Alexander

    2016-03-01

    An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. PMID:26699450

  3. Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films

    PubMed Central

    Li, Weiwei; Zhang, Wei; Wang, Le; Gu, Junxing; Chen, Aiping; Zhao, Run; Liang, Yan; Guo, Haizhong; Tang, Rujun; Wang, Chunchang; Jin, Kuijuan; Wang, Haiyan; Yang, Hao

    2015-01-01

    Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO3)1-x:(Sm2O3)x thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. Due to a relatively large strain generated at the interfaces, vertical interfaces between BaTiO3 and Sm2O3 are revealed to become the sinks to attract oxygen vacancies. The movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (BaTiO3)1-x:(Sm2O3)x thin films. This work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films. PMID:26061829

  4. Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films.

    PubMed

    Li, Weiwei; Zhang, Wei; Wang, Le; Gu, Junxing; Chen, Aiping; Zhao, Run; Liang, Yan; Guo, Haizhong; Tang, Rujun; Wang, Chunchang; Jin, Kuijuan; Wang, Haiyan; Yang, Hao

    2015-01-01

    Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO3)1-x:(Sm2O3)x thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. Due to a relatively large strain generated at the interfaces, vertical interfaces between BaTiO3 and Sm2O3 are revealed to become the sinks to attract oxygen vacancies. The movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (BaTiO3)1-x:(Sm2O3)x thin films. This work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films. PMID:26061829

  5. Vertical Interface Induced Dielectric Relaxation in Nanocomposite (BaTiO3)1-x:(Sm2O3)x Thin Films

    NASA Astrophysics Data System (ADS)

    Li, Weiwei; Zhang, Wei; Wang, Le; Gu, Junxing; Chen, Aiping; Zhao, Run; Liang, Yan; Guo, Haizhong; Tang, Rujun; Wang, Chunchang; Jin, Kuijuan; Wang, Haiyan; Yang, Hao

    2015-06-01

    Vertical interfaces in vertically aligned nanocomposite thin films have been approved to be an effective method to manipulate functionalities. However, several challenges with regard to the understanding on the physical process underlying the manipulation still remain. In this work, because of the ordered interfaces and large interfacial area, heteroepitaxial (BaTiO3)1-x:(Sm2O3)x thin films have been fabricated and used as a model system to investigate the relationship between vertical interfaces and dielectric properties. Due to a relatively large strain generated at the interfaces, vertical interfaces between BaTiO3 and Sm2O3 are revealed to become the sinks to attract oxygen vacancies. The movement of oxygen vacancies is confined at the interfaces and hampered by the misfit dislocations, which contributed to a relaxation behavior in (BaTiO3)1-x:(Sm2O3)x thin films. This work represents an approach to further understand that how interfaces influence on dielectric properties in oxide thin films.

  6. Effect of oxygen vacancy on the dielectric relaxation of BaTiO3 thin films in a quenched state

    NASA Astrophysics Data System (ADS)

    Yao, Sheng-Hong; Yuan, Jin-Kai; Gonon, Patrice; Bai, Jinbo; Pairis, Sébastien; Sylvestre, Alain

    2012-05-01

    A thermal treatment below the crystallization temperature followed by rapid cooling down was adopted onto as-deposited BaTiO3 (BTO) amorphous films to freeze the microstructure activated at annealed temperature. A large increase of dielectric constant from 19 to 329 was observed at 0.1 Hz for the BTO film annealed at 600 °C for 60 min. Subsequently, three separated dielectric relaxations were exploited as a function of the frequency and temperature. Such dielectric responses were analyzed in terms of the activation energy. The evolution of oxygen vacancy with temperature can be invoked as being responsible for the observed dielectric relaxations.

  7. Nitrided Metallic Bipolar Plates

    SciTech Connect

    Brady, Michael P; Tortorelli, Peter F; Pihl, Josh A; Toops, Todd J; More, Karren Leslie; Meyer III, Harry M; Vitek, John Michael; Wang, Heli; Turner, John; Wilson, Mahlon; Garzon, Fernando; Rockward, Tommy; Connors, Dan; Rakowski, Jim; Gervasio, Don

    2008-01-01

    The objectives are: (1) Develop and optimize stainless steel alloys amenable to formation of a protective Cr-nitride surface by gas nitridation, at a sufficiently low cost to meet DOE targets and with sufficient ductility to permit manufacture by stamping. (2) Demonstrate capability of nitridation to yield high-quality stainless steel bipolar plates from thin stamped alloy foils (no significant stamped foil warping or embrittlement). (3) Demonstrate single-cell fuel cell performance of stamped and nitrided alloy foils equivalent to that of machined graphite plates of the same flow-field design ({approx}750-1,000 h, cyclic conditions, to include quantification of metal ion contamination of the membrane electrode assembly [MEA] and contact resistance increase attributable to the bipolar plates). (4) Demonstrate potential for adoption in automotive fuel cell stacks. Thin stamped metallic bipolar plates offer the potential for (1) significantly lower cost than currently-used machined graphite bipolar plates, (2) reduced weight/volume, and (3) better performance and amenability to high volume manufacture than developmental polymer/carbon fiber and graphite composite bipolar plates. However, most metals exhibit inadequate corrosion resistance in proton exchange membrane fuel cell (PEMFC) environments. This behavior leads to high electrical resistance due to the formation of surface oxides and/or contamination of the MEA by metallic ions, both of which can significantly degrade fuel cell performance. Metal nitrides offer electrical conductivities up to an order of magnitude greater than that of graphite and are highly corrosion resistant. Unfortunately, most conventional coating methods (for metal nitrides) are too expensive for PEMFC stack commercialization or tend to leave pinhole defects, which result in accelerated local corrosion and unacceptable performance.

  8. Enhanced ferroelectric and dielectric properties of (111)-oriented highly cation-ordered PbSc0.5Ta0.5O3 thin films

    NASA Astrophysics Data System (ADS)

    Chopra, Anuj; Birajdar, Balaji I.; Kim, Yunseok; Alexe, Marin; Hesse, Dietrich

    2013-12-01

    Cation-ordered (111)-oriented epitaxial PbSc0.5Ta0.5O3 (PST) thin films were deposited by pulsed laser deposition on SrRuO3-electroded SrTiO3 (111) substrates at three different temperatures of 525 °C, 550 °C, and 575 °C. All the films were well crystalline and (111)-oriented at all the three growth temperatures; however, the films deposited at the temperatures other than 550 °C exhibited the presence of a pyrochlore phase. X-ray diffraction analysis and transmission electron microscopy measurements revealed that the films were epitaxial and highly cation-ordered. In comparison to (001)-oriented PST films, (111)-oriented films on SrRuO3/SrTiO3 (111) exhibited enhanced ferroelectric and dielectric properties with a broad size distribution of cation-ordered domains (5-100 nm). At a measurement temperature of 100 K, the remnant polarization of PST (111) films is almost √3 times larger than the remnant polarization observed for (001)-oriented PST films, which is attributed to the (111) orientation of the films, as the spontaneous polarization in PST lies close to the [111] direction. The observed dielectric constant and loss at 1 kHz were around 1145 and 0.11, respectively. The dielectric constant is thus almost three times higher than for previously reported (001)-oriented PST thin films, most probably due to the enhancement in cation-ordering.

  9. Anisotropic in-plane misfit strains dependence of phase diagrams and dielectric behavior in epitaxial Pb(Zr1-xTix)O3 thin films

    NASA Astrophysics Data System (ADS)

    Qiu, J. H.; Jiang, Q.

    2007-10-01

    A phenomenological Landau Devonshire thermodynamic theory is used to describe the effects of anisotropic in-plane misfit strains on equilibrium polarization states and dielectric properties of single domain epitaxial Pb(Zr1-xTix)O3 thin films grown on dissimilar orthorhombic substrates. Compared with the “isotropic in-plane misfit strains-temperature” phase diagrams, the characteristic features of “misfit strain-misfit strain” and “misfit strain-temperature” phase diagrams under the circumstance of strain anisotropy are the presence of four different phases (a, a, ac, and ac) and the direct 90° polarization switching between c phase and a phase (or a phase), between a phase and a phase. The misfit strain dependence of polarization components, the small-signal dielectric responses and the tunabilities at room temperature are also calculated. We find that the phase diagrams and dielectric properties largely depend on anisotropic in-plane misfit strains as well. Moreover, the strain anisotropy will lead to the polarization and dielectric anisotropy.

  10. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

    NASA Astrophysics Data System (ADS)

    Kim, Seong Keun; Kim, Wan-Don; Kim, Kyung-Min; Hwang, Cheol Seong; Jeong, Jaehack

    2004-11-01

    TiO2 thin films with high dielectric constants (83-100) were grown on a Ru electrode at a growth temperature of 250 °C using the atomic-layer deposition method. The as-deposited films were crystallized with rutile structure. Adoption of O3 with a very high concentration (400g/m3) was crucial for obtaining the rutile phase and the high dielectric constant. The leakage current density of a TiO2 film with an equivalent oxide thickness of 1.0-1.5 nm was 10-6-10-8A/cm2 at ±1V. All these electrical properties were obtained after limited postannealing where the annealing temperature was <500°C, which is crucial to the structural stability of the Ru electrode. Therefore, these TiO2 films are very promising as the capacitor dielectrics of dynamic random access memories. TiO2 films grown on a bare Si wafer or Pt electrode by the same process had anatase structure and a dielectric constant of ˜40.

  11. Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

    NASA Astrophysics Data System (ADS)

    Gago, R.; Jiménez, I.; Agulló-Rueda, F.; Albella, J. M.; Czigány, Zs.; Hultman, L.

    2002-11-01

    Boron carbon nitride films (BCN) were grown by B4C evaporation under concurrent N2 ion beam assistance. The films were characterized by x-ray absorption near-edge spectroscopy, infrared and Raman spectroscopies, and high-resolution transmission electron microscopy. The bonding structure and film composition correlate with the momentum transfer per incoming atom during deposition. As the momentum transfer is increased, the film structure evolves from an amorphous boron carbide network towards a hexagonal ternary compound (h-BCN) with standing basal planes. The growth of h-BCN takes place for momentum transfer in the window between 80 and 250 (eV×amu)1/2. The characteristic vibrational features of the h-BCN compounds have also been studied. Finally, the solubility limit of carbon in the hexagonal BN structure, under the working conditions of this article, is found to be ˜15 at. %.

  12. High-performance chemical-bath deposited CdS thin-film transistors with ZrO{sub 2} gate dielectric

    SciTech Connect

    Dondapati, Hareesh; Ha, Duc; Jenrette, Erin; Xiao, Bo; Pradhan, A. K.

    2014-08-04

    We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO{sub 2} based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (<5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO{sub 2} gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μ{sub FE} exceeding 4 ± 0.2 cm{sup 2} V{sup −1}S{sup −1}, threshold voltage V{sub T} of 3.8 V, and I{sub on-off} of 10{sup 4}–10{sup 5}, which hold much promise for applications in future electronic and optical devices.

  13. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate

    NASA Astrophysics Data System (ADS)

    Hyung, Gun Woo; Park, Jaehoon; Wang, Jian-Xun; Lee, Ho Won; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Woo Young; Kim, Young Kwan

    2013-07-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a solution-processed polymeric gate dielectric of cross-linked poly(4-vinylphenol) (c-PVP) film were fabricated on a poly(ethylene terephthalate) (PET) substrate on which an a-IGZO film, as the active channel layer, was deposited by radio frequency (RF) sputtering. The entire TFT fabrication process was carried out at a temperature below 110 °C. The device exhibited an on/off ratio of 1.5×106 and a high field-effect mobility of 10.2 cm2 V-1 s-1, which is, to our knowledge, the best result ever achieved among a-IGZO TFTs with polymeric gate dielectrics on a plastic substrate.

  14. Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yao, Yingbang; Lu, S. G.; Chen, Haydn; Wong, K. H.

    2004-11-01

    Lanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570°C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800°C for a duration of 30min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700°Ccould substantially improve the dielectric properties. However, annealing beyond 800°C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship.

  15. Synthesis, Properties, and Applications Of Boron Nitride

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Alterovitz, Samuel A.

    1993-01-01

    Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

  16. Air stable n-doping of WSe{sub 2} by silicon nitride thin films with tunable fixed charge density

    SciTech Connect

    Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

    2014-09-01

    Stable n-doping of WSe{sub 2} using thin films of SiN{sub x} deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN{sub x} act to dope WSe{sub 2} thin flakes n-type via field-induced effect. The electron concentration in WSe{sub 2} can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN{sub x} through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe{sub 2} junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe{sub 2} n-MOSFETs with a mobility of ∼70 cm{sup 2}/V s.

  17. A systematic reliability investigation of the dielectric charging process in electrostatically actuated MEMS based on Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Zaghloul, U.; Papaioannou, G. J.; Coccetti, F.; Pons, P.; Plana, R.

    2010-06-01

    This paper presents a comprehensive investigation for the dielectric charging problem in electrostatically actuated microelectromechanical system (MEMS) devices. The approach is based on Kelvin probe force microscopy (KPFM) and targets, in this specific paper, thin PECVD silicon nitride films for electrostatic capacitive RF MEMS switches. KPFM has been employed in order to mimic the potential induced at the dielectric surface due to charge injection through asperities. The effect of dielectric thickness has been investigated through depositing SiNx films with different thicknesses. Then, in order to simulate the different scenarios of dielectric charging in real MEMS switches, SiNx films have been deposited over thermally grown oxide, evaporated gold and electroplated gold layers. Also, the effect of the deposition conditions has been investigated through depositing dielectric films using low and high frequency PECVD methods. The investigation reveals that thin dielectric films have larger relaxation times compared to thick ones when the same injection bias is applied, independently of the substrate nature. For the same SiNx film thickness, the decay time constant is found to be smaller in dielectric films deposited over metallic layers compared to the ones deposited over silicon substrates. Finally, the material stoichiometry is found to affect the surface potential distribution as well as the relaxation time constant.

  18. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    SciTech Connect

    Li, X. D.; Chen, T. P. Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-03-14

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε{sub 1}) and imaginary (ε{sub 2}) parts of the dielectric function decrease significantly, and ε{sub 2} shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies.

  19. Optical characterization of polysilazane based silica thin films on silicon substrates

    NASA Astrophysics Data System (ADS)

    Ricci, Pier Carlo; Gulleri, Gianluca; Fumagalli, Francesco; Carbonaro, Carlo Maria; Corpino, Riccardo

    2013-01-01

    In this work polysilazane based silica thin films grown on multilayer structures of different ultra-thin barriers (UTBs) on silicon substrates were studied. The silica thin films were obtained by polysilazane spin coating deposition (also called SOD, spin-on dielectrics) upon different UTB liners (silicon nitride or silicon dioxide). By curing the SOD with thermal treatments the polysilazane is converted into silica thin films. The degree of conversion to SiO2 was analyzed and the oxide local structure was studied in terms of Sisbnd Osbnd Si bridges by FTIR spectroscopy. Steady state and time resolved luminescence were applied to further characterize the oxide structure, the substrate-silica interfaces and the presence of defects. The analysis revealed the presence of dioxasilirane, dbnd Si(O2), and silylene, dbnd Si:, defect centers in the samples grown on silicon nitride UTB, while these defects are not observed in samples grown on silicon oxide UTB.

  20. A study of the microstructure and optical properties of thin lead-dielectric cermet films. Ph.D. Thesis - Va. Polytechnic Inst. and State Univ.

    NASA Technical Reports Server (NTRS)

    Owen, R. B.

    1972-01-01

    A transmission electron microscopy study involving direct and replicating techniques is directed to a definition of the microstructure of radio frequency-sputtered, thin lead-dielectric cermet films. Once defined, this microstructure is used to obtain theoretical film refractive indices. The Maxwell Garnett theory provides a basis for the theoretical results. Measurements of film transmission and reflectivity are used to obtain rough experimental values for film refractive indices by the Tekucheva method. More exact values are obtained via ellipsometry. The rough Tekucheva values are used to determine the range over which computer calculations interpreting the ellipsometric results must be made. This technique yields accurate values for the film refractive indices.