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Sample records for non-evaporable getter films

  1. Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering

    SciTech Connect

    Gupta, Nidhi; Jagannath,; Sharma, R. K.; Gadkari, S. C.; Muthe, K. P.; Mukundhan, R.; Gupta, S. K.

    2013-02-05

    Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100 Degree-Sign C, 150 Degree-Sign C, 200 Degree-Sign C and 250 Degree-Sign C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.

  2. Characterization and Evaluation of Ti-Zr-V Non-evaporable Getter Films Used in Vacuum Systems

    NASA Astrophysics Data System (ADS)

    Ferreira, M. J.; Seraphim, R. M.; Ramirez, A. J.; Tabacniks, M. H.; Nascente, P. A. P.

    Among several methods used to obtain ultra-high vacuum (UHV) for particles accelerators chambers, it stands out the internal coating with metallic films capable of absorbing gases, called NEG (non-evaporable getter). Usually these materials are constituted by elements of great chemical reactivity and solubility (such as Ti, Zr, and V), at room temperature for oxygen and other gases typically found in UHV, such as H2, CO, and CO2. Gold and ternary Ti-Zr-V films were produced by magnetron sputtering, and their composition, structure, morphology, and aging characteristics were characterized by energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), field emission gun sc anning electronmicroscopy (FEG-SEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM). The comparison between the produced films and commercial samples indicated that the desirable characteristics depend on the nanometric structure of the films and that this structure is sensitive to the heat treatments.

  3. Preparation and Characterization of Ti-Zr-V Non-Evaporable Getter Films to Be Used in Ultra-High Vacuum

    SciTech Connect

    Ferreira, Marcelo J.; Tallarico, Denise A.; Nascente, Pedro A. P.

    2009-01-29

    An appealing procedure to obtain operating pressures in the 10{sup -8} Pa range, which is necessary for the insertion devices elements of synchrotron sources, is to coat the inner ultra-high vacuum chamber walls with a thin film of non-evaporable getter (NEG) metals. Titanium, zirconium, vanadium, and their alloys are used as NEG materials due to their low activation temperature, high chemical activity, large solubility, and high diffusivity for gases. In this work, magnetron sputtering was employed to deposit thin films of Ti-Zr-V on a Si(111) substrate. The morphological, structural, and chemical analyses were carried out by atomic force microscopy (AFM), scanning electron microscopy (SEM) with energy-dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS)

  4. Influence of electron irradiation and heating on secondary electron yields from non-evaporable getter films observed with in situ x-ray photoelectron spectroscopy

    SciTech Connect

    Nishiwaki, Michiru; Kato, Shigeki

    2007-07-15

    Nonevaporable getter (NEG) film has been used for the beam ducts of particle accelerators as a pump having a large area. NEG film has been considered to have a low outgas rate induced by energetic particle irradiation and a low secondary electron yield (SEY). In this article, we focused on SEY measurements and in situ surface characterization of four NEG film samples using x-ray photoelectron spectroscopy (XPS). The NEG samples were TiZrV thin films deposited by magnetron sputtering at 100 or 300 deg. C on stainless steel. In addition, NEG samples saturated by CO gas exposure were prepared. SEY and XPS measurements of the surfaces of NEG samples were carried out under the conditions of as received, after electron beam irradiation, and after heating at 200 deg. C for 24 h. The maximum SEY values of the primary electron energy dependence, {delta}{sub max}, of all NEG samples decreased to around 1 by electron beam irradiation owing to a change in the carbon impurities, such as carbon oxide, carbon hydroxide, and hydrocarbon, to graphite state (graphitization) during the irradiation. After heating, {delta}{sub max} values of the NEG samples without CO gas exposure were also around 1 owing to the carbonization of Ti, Zr, and V. The {delta}{sub max}{approx_equal}1 was remarkably lower than that of copper baked under the same conditions. However, in saturated NEG samples, metal carbides were not produced to a significant extent by heating, and the {delta}{sub max} values did not decrease, showing values of 1.5-1.7.

  5. Non Evaporable Getter (NEG) Coatings for Vacuum Systems in Synchrotron Radiation Facilities

    NASA Astrophysics Data System (ADS)

    Manini, Paolo; Conte, Andrea; Raimondi, Stefano; Bonucci, Antonio

    2007-01-01

    Non evaporable Getter (NEG) films, sputter deposited onto the internal surfaces of vacuum chambers, have been proposed by CERN to substantially reduce the gas pressure in UHV-XHV systems. The NEG film acts as a conductance-free distributed pump inside a chamber. Being a barrier for gases it also reduces thermal out-gassing, thus allowing the achievement of very demanding pressure conditions. These features are ideal for very narrow, conductance limited chambers, like Insertion Devices, which cannot be always efficiently pumped by ordinary means. Recent investigations have also shown that NEG coatings do present additional interesting features, like low secondary electron yield and low gas de-sorption rates under ions, electrons and photons bombardment, compared to traditional technical surfaces. Experimental tests, carried out in several high energy machines and synchrotron radiations facilities have so far confirmed the benefits of NEG films in term of better vacuum, longer beam life time and stability, simplified machine design, reduced conditioning time and overall improved machine performances. For these reasons, NEG coating technology is now gaining increasing attention and it is seriously considered for upgrades in a number of machines and for future projects. In the present paper, we report SAES getters experience on NEG coating of chambers of different geometries, materials and sizes for a variety of projects related to synchrotron radiation facilities. Examples of applications in various machines, as well as typical issues related to chambers preparation, film deposition, quality control and characterization, are given.

  6. Non Evaporable Getter (NEG) Coatings for Vacuum Systems in Synchrotron Radiation Facilities

    SciTech Connect

    Manini, Paolo; Conte, Andrea; Raimondi, Stefano; Bonucci, Antonio

    2007-01-19

    Non evaporable Getter (NEG) films, sputter deposited onto the internal surfaces of vacuum chambers, have been proposed by CERN to substantially reduce the gas pressure in UHV-XHV systems. The NEG film acts as a conductance-free distributed pump inside a chamber. Being a barrier for gases it also reduces thermal out-gassing, thus allowing the achievement of very demanding pressure conditions. These features are ideal for very narrow, conductance limited chambers, like Insertion Devices, which cannot be always efficiently pumped by ordinary means. Recent investigations have also shown that NEG coatings do present additional interesting features, like low secondary electron yield and low gas de-sorption rates under ions, electrons and photons bombardment, compared to traditional technical surfaces. Experimental tests, carried out in several high energy machines and synchrotron radiations facilities have so far confirmed the benefits of NEG films in term of better vacuum, longer beam life time and stability, simplified machine design, reduced conditioning time and overall improved machine performances. For these reasons, NEG coating technology is now gaining increasing attention and it is seriously considered for upgrades in a number of machines and for future projects. In the present paper, we report SAES getters experience on NEG coating of chambers of different geometries, materials and sizes for a variety of projects related to synchrotron radiation facilities. Examples of applications in various machines, as well as typical issues related to chambers preparation, film deposition, quality control and characterization, are given.

  7. Use of non evaporable getter pumps to ensure long term performances of high quantum efficiency photocathodes

    SciTech Connect

    Sertore, Daniele Michelato, Paolo; Monaco, Laura; Manini, Paolo; Siviero, Fabrizio

    2014-05-15

    High quantum efficiency photocathodes are routinely used as laser triggered emitters in the advanced high brightness electron sources based on radio frequency guns. The sensitivity of “semiconductor” type photocathodes to vacuum levels and gas composition requires special care during preparation and handling. This paper will discuss the results obtained using a novel pumping approach based on coupling a 20 l s{sup −1} sputter ion getter pump with a CapaciTorr® D100 non evaporable getter (NEG) pump. A pressure of 8⋅10{sup −8} Pa was achieved using only a sputter ion pump after a 6 day bake-out. With the addition of a NEG pump, a pressure of 2⋅10{sup −9} Pa was achieved after a 2 day bake-out. These pressure values were maintained without power due to the ability of the NEG to pump gases by chemical reaction. Long term monitoring of cathodes quantum efficiencies was also carried out at different photon wavelengths for more than two years, showing no degradation of the photoemissive film properties.

  8. Non Evaporable Getter (NEG) Pumps: a Route to UHV-XHV

    SciTech Connect

    Manini, Paolo

    2009-08-04

    Non Evaporable Getter (NEG) technology has been developed in the 1970's and since then adopted by industry, R and D labs, research centres and in large physics projects like accelerators, synchrotrons and fusion reactors. NEG pumps are very compact and vibration-free devices able to deliver very high pumping with minimal power requirement and electromagnetic interference. In the present paper, main features and performances of getter pumps are reviewed and discussed with a special focus to photocathode gun application, where UHV or XHV conditions are mandatory to ensure adequate gun life. NEG coating and future challenges for NEG technology are also discussed.

  9. Non-Evaporable Getter Coatings at the European Synchrotron Radiation Facility

    NASA Astrophysics Data System (ADS)

    Hahn, Michael

    A large majority of insertion device (ID) vacuum sectors on the European Synchrotron Radiation Facility (ESRF) electron storage ring for the production of intense synchrotron radiation are equipped with flat vacuum vessels made of extruded aluminum using a non-evaporable Getter (NEG) coating to reduce the vacuum pressure bump along the chamber during the operation of the accelerator. After the in-situ activation of the sputtered film by bake-out of the vacuum system the NEG pumps gases such as H2, CO and CO2 while CH4 and noble gases are not pumped. Because a low activation temperature for the NEG is necessary to be compatible with the mechanical limitations of the aluminum alloy, the NEG composition of TiZrV has been chosen. During operation of the ESRF electron storage ring a few hundreds of watts of synchrotron radiation fall on the walls of the ID chambers leading to photodesorption and photo-conditioning. The NEG coating is intended to provide distributed pumping and reduced photodesorption to keep the generation of unwanted Bremsstrahlung radiation following the installation of a new vessel low. The deposit of the NEG coating takes place at a dedicated facility in the ESRF.

  10. Hydrogen capacity and absorption rate of the SAES St707 non-evaporable getter at various temperatures.

    SciTech Connect

    Hsu, Irving; Mills, Bernice E.

    2010-08-01

    A prototype of a tritium thermoelectric generator (TTG) is currently being developed at Sandia. In the TTG, a vacuum jacket reduces the amount of heat lost from the high temperature source via convection. However, outgassing presents challenges to maintaining a vacuum for many years. Getters are chemically active substances that scavenge residual gases in a vacuum system. In order to maintain the vacuum jacket at approximately 1.0 x 10{sup -4} torr for decades, nonevaporable getters that can operate from -55 C to 60 C are going to be used. This paper focuses on the hydrogen capacity and absorption rate of the St707{trademark} non-evaporable getter by SAES. Using a getter testing manifold, we have carried out experiments to test these characteristics of the getter over the temperature range of -77 C to 60 C. The results from this study can be used to size the getter appropriately.

  11. Distributed Non-evaporable Getter pumps for the storage ring of the APS

    SciTech Connect

    Dortwegt, R.; Benaroya, R.

    1993-07-01

    A pair of distributed Non-evaporable Getter (NeG) strip assemblies is installed in each of 236 aluminum vacuum chambers of the 1104-m storage ring of the Advanced Photon Source. Distributed pumping is provided to remove most of the gas resulting from photon-stimulated desorption occurring along the outer walls of the chambers. This is an efficient way of pumping because conductance is limited along the beam axis. The St-707 NeG strips are conditioned at 450{degree}C for 45 min. with 42 A. Base pressures obtained are also as low as 4 {times} 10{sup 11} Torr. The NeG strip assemblies are supported by a series of electrically isolated, 125-mm-long, interlocking stainless steel carriers. These unique interlocking carrier elements provide flexibility along the vacuum chamber curvature (r=38.96 m) and permit removal and installation of assemblies with as little as 150 mm external clearance between adjacent chambers.

  12. Construction of Simple Non-Evaporable Getter Assemblies Using St 707 Strips or St 172 Modules

    NASA Astrophysics Data System (ADS)

    Kikuchi, Takashi; Mase, Kazuhiko; Watanabe, Fumio

    Several types of simple non-evaporable getter (NEG) assemblies have been constructed using a commercial St 707 strip or a St 172 module. Each assembly is mounted on a conflat flange with an outer diameter of 203, 70, or 34 mm (CF203, CF70, and CF34, respectively) and can be activated by direct current heating. The pumping speeds of the three NEG assemblies (the CF70-mount type using a St 707 strip, the CF70-mount type using a St 172 module, and the CF152-mount type using a St 707 strip) have been measured for N2 and H2 gasses at 20℃. The maximum pumping speeds for the three types of NEG assemblies were 4.8, 1.2, and 25 L s-1 (8.0, 3.6, and 82 L s-1) for N2 (H2), respectively. These NEG assemblies are useful for laboratory ultrahigh vacuum systems as well as vacuum ultraviolet/soft-X-ray beamlines in synchrotron radiation facilities.

  13. Electron stimulated molecular desorption of a non-evaporable Zr-V-Fe alloy getter at room temperature

    NASA Astrophysics Data System (ADS)

    Le Pimpec, F.; Gröbner, O.; Laurent, J. M.

    2002-10-01

    Electron stimulated molecular desorption (ESD) from a non-evaporable getters (NEG) St 707 ® (SAES Getters ™) sample after conditioning and after saturation with isotopic carbon monoxide (cf. nomenclature in Handbook of Chemistry and Physics, CRC Press, 1994), 13C 18O, has been studied on a laboratory setup. Measurements were performed using an electron beam of 300 eV kinetic energy, with an average electron intensity of 1.6×10 15 electrons s -1. The electrons were impinging on the 15 cm 2 target surface at perpendicular incidence. It is found that the desorption yields η (molecules/electron) of the characteristic gases in an UHV system (hydrogen, methane, water, carbon monoxide, carbon dioxide) for a fully activated NEG as well as for a NEG fully saturated with 13C 18O are lower than for OFHC copper baked at 120 °C. A small fraction only of the gas which is required to saturate the getter surface can be re-desorbed and thus appears to be accessible to ESD.

  14. Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging

    NASA Astrophysics Data System (ADS)

    Wu, Ming; Moulin, Johan; Lani, Sébastien; Hallais, Géraldine; Renard, Charles; Bosseboeuf, Alain

    2015-03-01

    Non-evaporable getter (NEG) thin films based on alloys of transition metals have been studied by various authors for vacuum control in wafer-level packages of micro electro mechanical systems (MEMS). These materials have typically a relatively high activation temperature (300-450 °C) which is incompatible with some temperature sensitive MEMS devices. In this work we investigate the potential of Au/Ti system with a thin or ultrathin non oxidizable Au layer as a low activation temperature getter material. In this bilayer system, gettering activation is produced by thermal outdiffusion of titanium atoms through the gold film. The outdiffusion kinetics of titanium was modelled and characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) at various temperatures. Results confirm that Au/Ti bilayer is a promising getter material for wafer-level packaging with an activation temperature below 300 °C for 1 h annealing time.

  15. ZrCoCe Getter Films for MEMS Vacuum Packaging

    NASA Astrophysics Data System (ADS)

    Xu, Yaohua; Cui, Jiandong; Cui, Hang; Zhou, Hao; Yang, Zhimin; Du, Jun

    2016-01-01

    In order to specifically support the technology trend of increased miniaturization of micro electro mechanical systems (MEMS) devices, highly porous ZrCoCe non-evaporable getter (NEG) film has been produced by direct current magnetron sputtering from a preformed ZrCoCe alloy target. Scanning electron microscopy and x-ray diffraction analysis indicated that the ZrCoCe film is constructed with porous columnar crystals, which are further built up with assembled ZrCoCe amorphous or nanocrystalline grains with an average grain size of 5 nm. Gas sorption investigation shows that this film can be activated at a low temperature of 300°C for 30 min and has excellent stable sorption characteristics. Sorption properties can be further improved with elevating activation temperatures due to nanocrystals growing and amorphous regions crystallizing. The capability of ZrCoCe films to withstand wafer physical or chemical cleaning processes is investigated, indicating their compatibility with MEMS vacuum packaging and the appropriate way to store them.

  16. Thermal decomposition of Ti getter films from the DITE tokamak

    SciTech Connect

    Malinowski, M.E.

    1981-04-01

    The potential application of Ti gettering in tritium-using tokamaks will result in unacceptably high in-torus tritium inventories if the tritium cannot be recovered from the Ti thin films. To help assess the feasibility of tritium recovery by outgassing such films, several samples of getter films evaporated in the DITE tokamak were thermally decomposed in vacuum. Film samples from four different azimuthal torus positions were heated at approx.1/sup 0/C s/sup -1/ and all exhibited decomposition rate peaks at 410/sup 0/ +- 10/sup 0/C; every film had been fully decomposed by the time 475/sup 0/C was reached. Separate experiments showed that isothermal desorption at temperatures as low as 350/sup 0/C was sufficient to outgas such films in 10 min. Together with previous work on clean films, the present results indicated that films which have not been as heavily contaminated as the DITE samples could be desorbed in vacuum at temperatures between 250--350/sup 0/C in acceptably short times, and demonstrate that in situ outgassing of tritided films would be feasible.

  17. Evolution of gettering technologies for vacuum tubes to getters for MEMS

    NASA Astrophysics Data System (ADS)

    Amiotti, M.

    2008-05-01

    Getter materials are technically proven and industrially accepted practical ways to maintain vacuum inside hermetically sealed tubes or devices to assure high reliability and long lifetime of the operating devices. The most industrially proven vacuum tube is the cathode rays tubes (CRTs), where large surfaces are available for the deposition of an evaporated barium film by a radio frequency inductive heating of a stainless steel container filled with a BaAl4 powder mixed to Ni powder. The evolution of the CRTs manufacturing technologies required also new types of barium getters able to withstand some thermal process in air without any deterioration of the evaporation characteristics. In other vacuum tubes such as traveling waves tubes, the space available for the evaporation of a barium film and the sorption capacity required to assure the vacuum for the lifetime of the devices did not allow the use of the barium film, prompting the development of sintered non evaporable getter pills that can be activated during the manufacturing process or by flowing current through an embedded resistance. The same sintered non evaporable getter pills could find usage also in evacuated parts to thermally isolate the infrared sensors for different final applications. In high energy physics particle accelerators, the getter technology moved from localized vacuum getter pumps or getter strips to a getter coating over the surface of vacuum chambers in order to guarantee a more uniform pumping speed. With the advent of solid state electronics, new challenges faced the getter technology to assure long life to vacuum or inert gas filled hermetical packages containing microelectronic devices, especially in the telecommunication and military applications. A well known problem of GaAs devices with Pd or Pt metalization is the H2 poisoning of the metal gate: to prevent this degradation a two layer getter film has been develop to absorb a large quantity of H2 per unit of getter surface. The

  18. Phosphorous and aluminum gettering in Silicon-Film{trademark} Product II material

    SciTech Connect

    Cotter, J.E.; Barnett, A.M.; Hall, R.B.

    1995-08-01

    Gettering processes are being developed for the Silicon-Film{trademark} Product II solar cell structure. These processes have been developed specifically for films of silicon grown on dissimilar substrates with barrier layers. Gettering with both phosphorous- and aluminum-based processing sequences has resulted in enhancement of minority carrier diffusion length. Long diffusion lengths have allowed the characterization of light trapping in thin films of silicon grown on barrier-coated substrates.

  19. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  20. Efficient combining of ion pumps and getter-palladium thin films

    SciTech Connect

    Paolini, C.; Mura, M.; Ravelli, F.

    2008-07-15

    Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and activation of the pumps to preserve the internal film from sources of contamination and/or from the sputtering of the titanium cathodes of the pump. Some important remarks will be made about the most appropriate conditions of pressure and temperature. The performance of the NEG-Pd-coated ion pumps was evaluated in terms of ultimate pressure and hydrogen pumping speed. The contribution of the thin film is particularly relevant for the pumping of this gas, due to its high sticking factor on palladium and the great sorption capacity of the underlying getter. Finally, the possibility of further improvement by substituting palladium with other Pd-based alloys will also be evaluated.

  1. Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

    SciTech Connect

    Grydlik, Martyna; Groiss, Heiko; Brehm, Moritz; Schaeffler, Friedrich; Boioli, Francesca; Montalenti, Francesco; Miglio, Leo; Gatti, Riccardo; Devincre, Benoit

    2012-07-02

    We show that suitable pit-patterning of a Si(001) substrate can strongly influence the nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si{sub 1-x}Ge{sub x} alloys, preferentially gettering misfit segments along pit rows. In particular, for a 250 nm layer deposited by molecular beam epitaxy at x{sub Ge} = 15%, extended film regions appear free of dislocations, by atomic force microscopy, as confirmed by transmission electron microscopy sampling. This result is quite general, as explained by dislocation dynamics simulations, which reveal the key role of the inhomogeneous distribution in stress produced by the pit-patterning.

  2. Patterning of magnetic thin films and multilayers using nanostructured tantalum gettering templates.

    PubMed

    Qiu, Wenlan; Chang, Long; Lee, Dahye; Dannangoda, Chamath; Martirosyan, Karen; Litvinov, Dmitri

    2015-03-25

    This work demonstrates that a nonmagnetic thin film of cobalt oxide (CoO) sandwiched between Ta seed and capping layers can be effectively reduced to a magnetic cobalt thin film by annealing at 200 °C, whereas CoO does not exhibit ferromagnetic properties at room temperature and is stable at up to ∼400 °C. The CoO reduction is attributed to the thermodynamically driven gettering of oxygen by tantalum, similar to the exothermic reduction-oxidation reaction observed in thermite systems. Similarly, annealing at 200 °C of a nonmagnetic [CoO/Pd]N multilayer thin film sandwiched between Ta seed and Ta capping layers results in the conversion into a magnetic [Co/Pd]N multilayer, a material with perpendicular magnetic anisotropy that is of interest for magnetic data storage applications. A nanopatterning approach is introduced where [CoO/Pd]N multilayers is locally reduced into [Co/Pd]N multilayers to achieve perpendicular magnetic anisotropy nanostructured array. This technique can potentially be adapted to nanoscale patterning of other systems for which thermodynamically favorable combination of oxide and gettering layers can be identified. PMID:25761738

  3. Impurity gettering

    SciTech Connect

    Picraux, S.T.

    1995-06-01

    Transition metal impurities are well known to cause detrimental effects when present in the active regions of Si devices. Their presence degrades minority carrier lifetime, provides recombination-generation centers, increases junction leakage current and reduces gate oxide integrity. Thus, gettering processes are used to reduce the available metal impurities from the active region of microelectronic circuits. Gettering processes are usually divided into intrinsic (or internal) and extrinsic (or external) categories. Intrinsic refers to processing the Si wafer in a way to make available internal gettering sites, whereas extrinsic implies externally introduced gettering sites. Special concerns have been raised for intrinsic gettering. Not only will the formation of the precipitated oxide and denuded zone be difficult to achieve with the lower thermal budgets, but another inherent limit may set in. In this or any process which relies on the precipitation of metal silicides the impurity concentration can only be reduced as low as the solid solubility limit. However, the solubilities of transition metals relative to silicide formation are typically found to be {approx_gt}10{sup 12}/cm{sup 3} at temperatures of 800 C and above, and thus inadequate to getter to the needed concentration levels. It is thus anticipated that future microelectronic device processing will require one or more of the following advances in gettering technology: (1) new and more effective gettering mechanisms; (2) quantitative models of gettering to allow process optimization at low process thermal budgets and metal impurity concentrations, and/or (3) development of front side gettering methods to allow for more efficient gettering close to device regions. These trend-driven needs provide a driving force for qualitatively new approaches to gettering and provide possible new opportunities for the use of ion implantation in microelectronics processing.

  4. Studies of chromium gettering

    SciTech Connect

    Simpkins, J.E.; Mioduszewski, P.; Stratton, L.W.

    1982-01-01

    Preliminary results have shown that hydrogen pumping by chromium is a surface effect. Unlike with titanium, the getter material used in many present day tokamaks, there is no significant diffusion into the bulk. Additional experiments have been carried out to measure the basic characteristics of chromium films for gases of interest in tokamak research. These gases include deuterium, oxygen and nitrogen. A vacuum system is described which allowed precise control of the test gas, a constant wall temperature and determination of the projected getter surface area. A quadrupole mass spectrometer, rather than simply a total pressure gauge, was utilized to measure the partial pressure of the test gas as well as the residual gas composition in the system. A quartz crystal monitor was used to measure film thickness. Pumping speeds and sticking coefficients are given as a function of surface coverage for each test gas. A comparison will be made with titanium films deposited in the same vacuum system and under similar conditions.

  5. Comparison of Ti-Zr-V nonevaporable getter films deposited using alloy or twisted wire sputter-targets

    SciTech Connect

    Valizadeh, R.; Malyshev, O. B.; Colligon, J. S.; Hannah, A.; Vishnyakov, V. M.

    2010-11-15

    A comparison of the performance of nonevaporable getter (NEG) films deposited using two different types of targets has been made to find the one that has the best pumping properties. For the first time, the NEG coating was deposited using a preformed Ti-Zr-V alloy target. The NEG film characterization and pumping properties have been studied in comparison with a film deposited using the commonly used three-wire twisted target. It was demonstrated that the alloy target produces a NEG coating with uniform composition both laterally and in depth. The composition of the film was found to be the same as the target. Film topography and microstructure with 5 nm grain sizes were found to be the same for both targets. The main result is that the activation temperature of the NEG coating deposited using the Ti-Zr-V alloy target is 160 deg. C, which is 20 deg. C lower than for NEG coatings deposited using three twisted wires.

  6. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  7. An innovative getter coating for IR dewars and cold shields

    NASA Astrophysics Data System (ADS)

    Katsir, Dina; Feinman, Daniel

    2008-04-01

    A new getter type produced as a vacuum deposited thin-film is under development (patent pending). The film serves as an efficient pumping substance and also as an efficient absorber of IR stray light. The getter film is activated in place by heating to 130 °C. The film is very thin and has excellent vibration resistance and temperature stability and is expected to serve as an advantageous new solution for IR detector dewars and cold shields.

  8. Combination moisture and hydrogen getter

    DOEpatents

    Harrah, L.A.; Mead, K.E.; Smith, H.M.

    1983-09-20

    A combination moisture and hydrogen getter comprises (a) a moisture getter comprising a readily oxidizable metal; and (b) a hydrogen getter comprising (1) a solid acetylenic compound and (2) a hydrogenation catalyst. A method of scavenging moisture from a closed container uses the combination moisture and hydrogen getter to irreversibly chemically reduce the moisture and chemically bind the resultant hydrogen.

  9. Combination moisture and hydrogen getter

    DOEpatents

    Not Available

    1982-04-29

    A combination moisture and hydrogen getter comprises (a) a moisture getter comprising a readily oxidizable metal; and (b) a hydrogen getter comprising (i) a solid acetylenic compound and (ii) a hydrogenation catalyst. A method of scavenging moisture from a closed container uses the combination moisture and hydrogen getter to irreversibly chemically reduce the moisture and chemically bind the reusltant hydrogen.

  10. Combination moisture and hydrogen getter

    DOEpatents

    Harrah, Larry A.; Mead, Keith E.; Smith, Henry M.

    1983-01-01

    A combination moisture and hydrogen getter comprises (a) a moisture getter comprising a readily oxidizable metal; and (b) a hydrogen getter comprising (i) a solid acetylenic compound and (ii) a hydrogenation catalyst. A method of scavenging moisture from a closed container uses the combination moisture and hydrogen getter to irreversibly chemically reduce the moisture and chemically bind the resultant hydrogen.

  11. SAES St 909 Getter Testing at the Savannah River National Laboratory

    SciTech Connect

    Klein, J. E.; Holder, J. E

    2005-09-07

    Process gas tritium stripper technology has gone from catalytic oxidation followed by absorption on molecular sieve/zeolite beds to non-evaporate metal getter technology. SAES Getters produces a number of commercial getter products including St 909. St 909, a Zr-Mn-Fe alloy, is sold in pellet form, can decompose (''crack'') a number of process gas impurities, and retains lower levels of tritium than other getters. The performance of this material to remove process impurities, especially methane, under of variety of operating conditions has been part of a Savannah River National Laboratory (SRNL) for five years. St 909 has been tested at the bench (6 gram) scale, the pilot (500 gram) scale, and at the full (5300) gram scale under a variety of test conditions. This paper gives a brief summary of test results obtained for the different scale tests.

  12. Hydrogen gettering packing material, and process for making same

    DOEpatents

    LeMay, James D.; Thompson, Lisa M.; Smith, Henry Michael; Schicker, James R.

    2001-01-01

    A hydrogen gettering system for a sealed container is disclosed comprising packing material for use within the sealed container, and a coating film containing hydrogen gettering material on at least a portion of the surface of such packing material. The coating film containing the hydrogen gettering material comprises a mixture of one or more organic materials capable of reacting with hydrogen and one or more catalysts capable of catalyzing the reaction of hydrogen with such one or more organic materials. The mixture of one or more organic materials capable of reacting with hydrogen and the one or more catalysts is dispersed in a suitable carrier which preferably is a curable film-forming material. In a preferred embodiment, the packing material comprises a foam material which is compatible with the coating film containing hydrogen gettering material thereon.

  13. RENEWABLE LIQUID GETTERING PUMP

    DOEpatents

    Batzer, T.H.

    1962-08-21

    A method and structure were developed for pumping gases by simple absorption into a liquid gettering material. The invention comprises means ror continuously pumping a liquid getterrng material from a reservoir to the top of a generally vertical surface disposed in a vacuum pumping chamber to receive gaseous and other particles in the liquid gettering material which continuously flows downward over the vertical suiface. Means are provided for continuous removal, degassing, and return of a portion of the liquid gettering material from the reservoir connected with collectrng means at the base of the generally vertical plate. (AEC)

  14. Secondary Electron Yield Measurements of TiN coating and TiZrV getter film(LCC-128)

    SciTech Connect

    Le Pimpec, F

    2003-10-09

    In the beam pipe of the positron Main Damping Ring (MDR) of the Next Linear Collider (NLC), ionization of residual gases and secondary electron emission give rise to an electron cloud which can cause the loss of the circulating beam. One path to avoid the electron cloud is to ensure that the vacuum wall has low secondary emission yield and, therefore, we need to know the secondary emission yield (SEY) for candidate wall coatings. We report on SEY measurements at SLAC on titanium nitride (TiN) and titanium-zirconium-vanadium (TiZrV) thin sputter deposited films, as well as describe our experimental setup.

  15. Gettering Silicon Wafers with Phosphorus

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.

    1983-01-01

    Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.

  16. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  17. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  18. Ionization-Assisted Getter Pumping for Ultra-Stable Trapped Ion Frequency Standards

    NASA Technical Reports Server (NTRS)

    Tjoelker, Robert L.; Burt, Eric A.

    2010-01-01

    A method eliminates (or recovers from) residual methane buildup in getter-pumped atomic frequency standard systems by applying ionizing assistance. Ultra-high stability trapped ion frequency standards for applications requiring very high reliability, and/or low power and mass (both for ground-based and space-based platforms) benefit from using sealed vacuum systems. These systems require careful material selection and system processing (cleaning and high-temperature bake-out). Even under the most careful preparation, residual hydrogen outgassing from vacuum chamber walls typically limits the base pressure. Non-evaporable getter pumps (NEGs) provide a convenient pumping option for sealed systems because of low mass and volume, and no power once activated. An ion gauge in conjunction with a NEG can be used to provide a low mass, low-power method for avoiding the deleterious effects of methane buildup in high-performance frequency standard vacuum systems.

  19. Low temperature, low pressure hydrogen gettering

    DOEpatents

    Anderson, D.R.; Courtney, R.L.; Harrah, L.A.

    1975-07-22

    A system is described for the gettering of hydrogen and its isotopes. The gettering materials are painted or coated onto, or otherwise disposed in an area or volume from which hydrogen is to be removed. (auth)

  20. Irreversible gettering of thionyl chloride

    SciTech Connect

    LeRoy Whinnery; Steve Goods; George Buffleben; Tim Sheppodd

    1999-11-01

    The authors have successfully demonstrated the irreversible gettering of SOCl{sub 2} by ZnO/ASZMTEDA carbon over a modest temperature range. While thionyl chloride decomposition was slow below {minus}20 C, lower temperatures are expected to be less of a problem than at higher temperatures. The approximately 30 cc of thionyl chloride in a typical D-cell would require 50 g of ZnO and 107 g of ASZMTEDA carbon. Fortunately, since it is unlikely to happen at all, it is common practice to assume only one cell will fail (leak) in a given battery pack. So, one charge of getter can protect the whole battery pack. In summary, ZnO/ASZMTEDA carbon fulfills all of the requirements of an ideal getter including: irreversible binding or reaction with SOCl{sub 2}, high volumetric uptake capacity, high efficiency, non-volatile, air stable, insensitive to poisoning, non-toxic, cheap, non-corrosive, and the gettering product is not a liquid or oil that could block further flow or accessibility. Future work in this area includes incorporation of the ZnO and carbon into a structural open-celled porous monolith, as well as, gettering for other types of batteries (e.g., Li/MnO{sub 2}).

  1. Evaluation of extrinsic gettering techniques

    SciTech Connect

    Medernach, J.W.; Wells, V.A.; Witherspoon, L.

    1985-01-01

    Nitride (N-EG); poly-nitride (PN-EG), and poly (P-EG) extrinsic gettering techniques were evaluated using a 3.0 micron P-well CMOS process with N/N+ substrates. The devices used for this evaluation were a 2K SRAM and a N+ to P-well test diode. All gettering was applied as a post-opitaxial process except the P-EG material. Results showed that the N-EG material had lower defect surface densities and superior diode characteristics when compared to the P-EG and epitacial control Epi-C without gettering. Test diode characteristics showed the PN-EG and the N-EG samples having very low leakage currents compared to the P-EG and EPI-C samples. Similar findings also were obtained for the leakage current of the 2K SRAM. A graphical correlation between the leakage currents of the 2K SRAM and the test diode is established. This demonstrates how effective the N-EG and PN-EG gettering ability is for COMS processing. All devices receiving the nitride or the polynitride gettering showed improved device performance.

  2. Reliable vacuum packaging using NanoGetters and glass frit bonding

    NASA Astrophysics Data System (ADS)

    Sparks, Douglas; Massoud-Ansari, Sonbol; Najafi, Nader

    2004-01-01

    A new approach to vacuum packaging micromachined resonant, tunneling, and display devices will be covered in this paper. A multi-layer, thin-film getter, called a NanoGetter, which is particle free and does not increase the chip size of the microsystem has been developed and integrated into conventional wafer-to-wafer bonding processes. Experimental data taken with chip-scale packages using glass frit bonding between the Pyrex and silicon wafers, has resulted in silicon resonators in which Q values in excess of 37,000 have been obtained. Reliability data for vacuum-sealed diaphragms and resonators will be presented. Unlike previous reliability studies without getters, no degradation in Q has been noted with NanoGetter parts after extended high temperature storage. Applications for this technology include gyroscopes, accelerometers, displays, flow sensors, density meters, IR sensors, microvacuum tubes, RF-MEMS, pressure sensors and other vacuum sealed devices.

  3. Reliable vacuum packaging using NanoGetters and glass frit bonding

    NASA Astrophysics Data System (ADS)

    Sparks, Douglas; Massoud-Ansari, Sonbol; Najafi, Nader

    2003-12-01

    A new approach to vacuum packaging micromachined resonant, tunneling, and display devices will be covered in this paper. A multi-layer, thin-film getter, called a NanoGetter, which is particle free and does not increase the chip size of the microsystem has been developed and integrated into conventional wafer-to-wafer bonding processes. Experimental data taken with chip-scale packages using glass frit bonding between the Pyrex and silicon wafers, has resulted in silicon resonators in which Q values in excess of 37,000 have been obtained. Reliability data for vacuum-sealed diaphragms and resonators will be presented. Unlike previous reliability studies without getters, no degradation in Q has been noted with NanoGetter parts after extended high temperature storage. Applications for this technology include gyroscopes, accelerometers, displays, flow sensors, density meters, IR sensors, microvacuum tubes, RF-MEMS, pressure sensors and other vacuum sealed devices.

  4. Method for charging a hydrogen getter

    DOEpatents

    Tracy, C.E.; Keyser, M.A.; Benson, D.K.

    1998-09-15

    A method for charging a sample of either a permanent or reversible getter material with a high concentration of hydrogen while maintaining a base pressure below 10{sup {minus}4} torr at room temperature involves placing the sample of hydrogen getter material in a chamber, activating the sample of hydrogen getter material, overcharging the sample of getter material through conventional charging techniques to a high concentration of hydrogen, and then subjecting the sample of getter material to a low temperature vacuum bake-out process. Application of the method results in a reversible hydrogen getter which is highly charged to maximum capacities of hydrogen and which concurrently exhibits minimum hydrogen vapor pressures at room temperatures. 9 figs.

  5. Method for charging a hydrogen getter

    DOEpatents

    Tracy, C. Edwin; Keyser, Matthew A.; Benson, David K.

    1998-01-01

    A method for charging a sample of either a permanent or reversible getter material with a high concentration of hydrogen while maintaining a base pressure below 10.sup.-4 torr at room temperature involves placing the sample of hydrogen getter material in a chamber, activating the sample of hydrogen getter material, overcharging the sample of getter material through conventional charging techniques to a high concentration of hydrogen, and then subjecting the sample of getter material to a low temperature vacuum bake-out process. Application of the method results in a reversible hydrogen getter which is highly charged to maximum capacities of hydrogen and which concurrently exhibits minimum hydrogen vapor pressures at room temperatures.

  6. Aluminum gettering in single and multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Hieslmair, H.; Weber, E.R.

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  7. Polymer system for gettering hydrogen

    DOEpatents

    Shepodd, Timothy Jon; Whinnery, LeRoy L.

    2000-01-01

    A novel composition comprising organic polymer molecules having carbon-carbon double bonds, for removing hydrogen from the atmosphere within enclosed spaces. Organic polymers molecules containing carbon-carbon double bonds throughout their structures, preferably polybutadiene, polyisoprene and derivatives thereof, intimately mixed with an insoluble catalyst composition, comprising a hydrogenation catalyst and a catalyst support, preferably Pd supported on carbon, provide a hydrogen getter composition useful for removing hydrogen from enclosed spaces even in the presence of contaminants such as common atmospheric gases, water vapor, carbon dioxide, ammonia, oil mists, and water. The hydrogen getter composition disclosed herein is particularly useful for removing hydrogen from enclosed spaces containing potentially explosive mixtures of hydrogen and oxygen.

  8. Polymer formulations for gettering hydrogen

    DOEpatents

    Shepodd, Timothy Jon; Whinnery, LeRoy L.

    1998-11-17

    A novel composition comprising organic polymer molecules having carbon-carbon double bonds, for removing hydrogen from the atmosphere within enclosed spaces. Organic polymers molecules containing carbon-carbon double bonds throughout their structures, preferably polybutadiene, polyisoprene and derivatives thereof, intimately mixed with an insoluble catalyst composition, comprising a hydrogenation catalyst and a catalyst support, preferably Pd supported on carbon, provide a hydrogen getter composition useful for removing hydrogen from enclosed spaces even in the presence of contaminants such as common atmospheric gases, water vapor, carbon dioxide, ammonia, oil mists, and water. The hydrogen getter composition disclosed herein is particularly useful for removing hydrogen from enclosed spaces containing potentially explosive mixtures of hydrogen and oxygen.

  9. Oxidation resistant organic hydrogen getters

    DOEpatents

    Shepodd, Timothy J.; Buffleben, George M.

    2008-09-09

    A composition for removing hydrogen from an atmosphere, comprising a mixture of a polyphenyl ether and a hydrogenation catalyst, preferably a precious metal catalyst, and most preferably Pt. This composition is stable in the presence of oxygen, will not polymerize or degrade upon exposure to temperatures in excess of 200.degree. C., or prolonged exposure to temperatures in the range of 100-300.degree. C. Moreover, these novel hydrogen getter materials can be used to efficiently removing hydrogen from mixtures of hydrogen/inert gas (e.g., He, Ar, N.sub.2), hydrogen/ammonia atmospheres, such as may be encountered in heat exchangers, and hydrogen/carbon dioxide atmospheres. Water vapor and common atmospheric gases have no adverse effect on the ability of these getter materials to absorb hydrogen.

  10. Polymer formulations for gettering hydrogen

    DOEpatents

    Shepodd, T.J.; Whinnery, L.L.

    1998-11-17

    A novel composition is described comprising organic polymer molecules having carbon-carbon double bonds, for removing hydrogen from the atmosphere within enclosed spaces. Organic polymers molecules containing carbon-carbon double bonds throughout their structures, preferably polybutadiene, polyisoprene and derivatives thereof, intimately mixed with an insoluble catalyst composition, comprising a hydrogenation catalyst and a catalyst support, preferably Pd supported on carbon, provide a hydrogen getter composition useful for removing hydrogen from enclosed spaces even in the presence of contaminants such as common atmospheric gases, water vapor, carbon dioxide, ammonia, oil mists, and water. The hydrogen getter composition disclosed herein is particularly useful for removing hydrogen from enclosed spaces containing potentially explosive mixtures of hydrogen and oxygen. 1 fig.

  11. New sensitive moisture getter system by using aluminium complex and polyacetylene containing silyl group for display.

    PubMed

    Kim, Sae-Rom; Kim, Soo-Kang; Ryu, Dong-Wan; Park, Ho-Cheol; Lee, Jae-Hoon; Choi, Cheol-Kyu; Jaung, Jae-Yun; Park, Jong-Wook

    2009-12-01

    In this study, a novel moisture getter was fabricated from a new desiccant triethylaluminum [TEA] and a porous material poly(1-trimethylsilylpropyne) [PTMSP] as a binder and then was applied to organic light-emitting diode (OLED). After forming a film of 1.5 cm x 2.0 cm with 50 mg of PTMSP by a film-casting method, its property was measured. As a result, PTMSP (Mn:50 K) created a film with a relatively high porosity. PTMSP (60%) and TEA (40%) were mixed to fabricate a getter system with a good transmittance of over 80%. The fabricated getter, adopted in a OLED device, showed excellent features, as a level of commercialization: 490-hour shelf lifetime under the conditions of 60 degrees C and 90% RH. PMID:19908747

  12. Hydrogen isotope separation utilizing bulk getters

    DOEpatents

    Knize, Randall J.; Cecchi, Joseph L.

    1990-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  13. Hydrogen isotope separation utilizing bulk getters

    DOEpatents

    Knize, Randall J.; Cecchi, Joseph L.

    1991-01-01

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen.

  14. Hydrogen isotope separation utilizing bulk getters

    DOEpatents

    Knize, R.J.; Cecchi, J.L.

    1991-08-20

    Tritium and deuterium are separated from a gaseous mixture thereof, derived from a nuclear fusion reactor or some other source, by providing a casing with a bulk getter therein for absorbing the gaseous mixture to produce an initial loading of the getter, partially desorbing the getter to produce a desorbed mixture which is tritium-enriched, pumping the desorbed mixture into a separate container, the remaining gaseous loading in the getter being deuterium-enriched, desorbing the getter to a substantially greater extent to produce a deuterium-enriched gaseous mixture, and removing the deuterium-enriched mixture into another container. The bulk getter may comprise a zirconium-aluminum alloy, or a zirconium-vanadium-iron alloy. The partial desorption may reduce the loading by approximately fifty percent. The basic procedure may be extended to produce a multistage isotope separator, including at least one additional bulk getter into which the tritium-enriched mixture is absorbed. The second getter is then partially desorbed to produce a desorbed mixture which is further tritium-enriched. The last-mentioned mixture is then removed from the container for the second getter, which is then desorbed to a substantially greater extent to produce a desorbed mixture which is deuterium-enriched. The last-mentioned mixture is then removed so that the cycle can be continued and repeated. The method of isotope separation is also applicable to other hydrogen isotopes, in that the method can be employed for separating either deuterium or tritium from normal hydrogen. 4 figures.

  15. Neutral beam dump with cathodic arc titanium gettering

    SciTech Connect

    Smirnov, A.; Korepanov, S. A.; Putvinski, S.; Krivenko, A. S.; Murakhtin, S. V.; Savkin, V. Ya.

    2011-03-15

    An incomplete neutral beam capture can degrade the plasma performance in neutral beam driven plasma machines. The beam dumps mitigating the shine-through beam recycling must entrap and retain large particle loads while maintaining the beam-exposed surfaces clean of the residual impurities. The cathodic arc gettering, which provides high evaporation rate coupled with a fast time response, is a powerful and versatile technique for depositing clean getter films in vacuum. A compact neutral beam dump utilizing the titanium arc gettering was developed for a field-reversed configuration plasma sustained by 1 MW, 20-40 keV neutral hydrogen beams. The titanium evaporator features a new improved design. The beam dump is capable of handling large pulsed gas loads, has a high sorption capacity, and is robust and reliable. With the beam particle flux density of 5 x 10{sup 17} H/(cm{sup 2}s) sustained for 3-10 ms, the beam recycling coefficient, defined as twice the ratio of the hydrogen molecular flux leaving the beam dump to the incident flux of high-energy neutral atoms, is {approx}0.7. The use of the beam dump allows us to significantly reduce the recycling of the shine-through neutral beam as well as to improve the vacuum conditions in the machine.

  16. Metal getters for tritium storage

    SciTech Connect

    Willin, E.; Sirch, M.; Penzhorn, R.D.; Devillers, M.

    1988-09-01

    Whereas titanium is a getter material mainly suitable for the long-term storage of tritium, zirconium cobalt alloy can also be employed for the interim storage and transport of this gas. Activated zirconium cobalt alloy reacts within minutes with hydrogen at room temperature. At the composition of /ZrCoH/sub 0.8/ the dissociation pressure at room temperature is estimated to be 10/sup -3/ Pa. The zirconium cobalt/H/sub 2/ system is not pyrophoric at room temperature. Methane is partially cracked on Ti and on ZrCo at temperatures above 600 and 300/sup 0/C respectively. With titanium the corresponding carbide is formed without affecting the storage properties of the getter. After reaction of ZrCo with CH/sub 4/ or N/sub 2/ the hydrogen adsorption capacity is reduced. Titanium powder, sponge or sheet react with nitrogen at temperatures above 750/sup 0/C with a parabolic rate law. In the overlayer of the metal substrate the phases N dissolved in /alpha/-Ti, Ti/sub 2/N and TiN were identified. The same phases were observed when NH/sub 3/ reacts with this metal.

  17. A Continuing Story on the Secondary Electron Yield Measurements of TiN Coating and TiZrV Getter Film

    SciTech Connect

    Le Pimpec, F.

    2004-06-07

    In the beam pipe of the positron Main Damping Ring (MDR) of the Next Linear Collider (NLC), ionization of residual gases and secondary electron emission will give rise to an electron cloud which can cause the loss of the circulating beam. One path to avoid the electron cloud is to ensure that the vacuum wall has low secondary emission yield and, therefore, we need to know the secondary emission yield (SEY) for candidate wall coatings. We report on the ongoing SEY measurements at SLAC on titanium nitride (TiN) and titanium-zirconium-vanadium (TiZrV) thin sputter-deposited films, as well as their effects on simulations.

  18. Practical sublimation source for large-scale chromium gettering in fusion devices

    SciTech Connect

    Simpkins, J.E.; Emerson, L.C.; Mioduszewski, P.K.

    1983-01-01

    This paper describes the technique of chromium gettering with a large-scale sublimation source which resembles in its design the VARIAN Ti-Ball. It consists of a hollow chromium sphere with a diameter of approximately 3 cm and an incandescent filament for radiation heating from inside the ball. While the fabrication of the source is described in a companion paper, we discuss here the gettering technique. The experimental arrangement consists of an UHV system instrumented for total- and partial-pressure measurements, a film-thickness monitor, thermocouples, an optical pyrometer, and appropriate instrumentation to measure the heating power. The results show the temperature and corresponding sublimation rate of the Cr-Ball as function of input power. In addition, an example of the total pumping speed of a gettered surface is shown.

  19. Draft test plan for hydrogen getters project

    SciTech Connect

    Mroz, G.; Weinrach, J.

    1998-04-01

    Hydrogen levels in many transuranic (TRU) waste drums are above the compliance threshold, therefore deeming the drums non-shippable to the Waste Isolation Pilot Plant (WIPP). Hydrogen getters (alkynes and dialkynes) are known to react irreversibly with hydrogen in the presence of certain catalysts. The primary purpose of this investigation is to ascertain the effectiveness of a hydrogen getter in an environment that contains gaseous compounds commonly found in the headspace of drums containing TRU waste. It is not known whether the volatile organic compounds (VOCs) commonly found in the headspace of TRU waste drums will inhibit (poison) the effectiveness of the hydrogen getter. The results of this study will be used to assess the feasibility of a hydrogen-getter system, which is capable of removing hydrogen from the payload containers or the Transuranic Package Transporter-II (TRUPACT-II) inner containment vessel to increase the quantity of TRU waste that can be shipped to the WIPP.

  20. Internal gettering by metal alloy clusters

    DOEpatents

    Buonassisi, Anthony; Heuer, Matthias; Istratov, Andrei A.; Pickett, Matthew D.; Marcus, Mathew A.; Weber, Eicke R.

    2010-07-27

    The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

  1. Gettering of metal impurities in silicon

    SciTech Connect

    Schroeter, W.; Spiecker, E.; Apel, M.

    1995-08-01

    Gettering means the removal of metallic impurities from the device-active area of the wafer by transport to a predesigned region-called gettering layer (GL). We introduce an interface at z = d{sub GL}, at which the effect of the gettering mechanism on the metal impurity distribution in the wafer is quantified, e.g. by specifying currents or by interfacial reactions of metal impurities, self interstitials etc. between GL and wafer. In response metal impurities will diffuse out of the wafer into the gettering layer. Following such a concept, in general three species of the metal impurity (M) are involved in gettering: M{sub p} {l_arrow} M{sub i} {l_arrow} M{sub GL}. M{sub p} denotes immobile species in the wafer, which are precipitated into suicides or segregated at extended defects or whose diffusivity is too small to contribute noticeably to transport during the gettering procedure - like many substitutional metal species.

  2. Development of a Prototype Optical Hydrogen Gas Sensor Using a Getter-Doped Polymer Transducer for Monitoring Cumulative Exposure: Preliminary Results

    SciTech Connect

    Small IV, W; Maitland, D J; Wilson, T S; Bearinger, J P; Letts, S A; Trebes, J E

    2008-06-05

    A novel prototype optical sensor for monitoring cumulative hydrogen gas exposure was fabricated and evaluated. Chemical-to-optical transduction was accomplished by detecting the intensity of 670 nm laser light transmitted through a hydrogen getter-doped polymer film mounted at the end of an optical fiber; the transmittance of the composite film increased with uptake of hydrogen by the embedded getter. The composite film consisted of the hydrogen getter 1,4-bis(phenylethynyl)benzene, also known as DEB, with carbon-supported palladium catalyst embedded in silicone elastomer. Because the change in transmittance was irreversible and occurred continuously as the getter captured hydrogen, the sensor behaved like a dosimeter, providing a unique indication of the cumulative gas exposure.

  3. Toward understanding and modeling of impurity gettering in silicon

    SciTech Connect

    Tan, Teh Y.; Gafiteanu, R.; Goesele, U.M.

    1995-08-01

    Gettering of harmful impurities away from the device active regions has already become an integral part of manufacturing integrated circuits (IC) using Czochralski (CZ) Si wafers, and is experiencing an increasing importance in Si solar cell fabrications for improving the cell efficiency. Gettering consists of (1) the creation of suitable gettering sites; and (2) the gettering processes of contaminants. Requirements for successful gettering differ between the IC and solar cell cases, because ICs are monolithic devices situated at the Si wafer surfaces while solar cells are bulk devices, and because the Si substrate materials used are different. For IC fabrications, the method used is that of intrinsic or internal gettering (IG) which utilizes oxygen precipitates and their associated defects in the CZ Si wafer bulk as gettering sites. Because of the bulk nature of IG sites, the scheme cannot be used also for solar cells. Only some kind of extrinsic or external gettering (EG) schemes with gettering sites located at the wafer surface regions can be used for solar cells. The gettering of the harmful contaminants, usually metals, to the gettering region involves the metal dissolution from precipitated state, the metal atom diffusion to and the stabilization at the gettering sites. A mathematical model of the gettering process is presented.

  4. Fabrication of high rate chromium getter sources for fusion applications

    SciTech Connect

    Gabbard, W.A.; Simpkins, J.E.; Mioduszewski, P.; Edmonds, P.H.

    1983-01-01

    Design and fabrication techniques are described for the manufacture of large-capacity chromium getter sources, analogous to the commercially available titanium getter source known as Ti-Ball, manufactured by Varian Associates.

  5. Mechanisms of transition-metal gettering in silicon

    SciTech Connect

    MYERS JR.,SAMUEL M.; SEIBT,M.; SCHROTER,W.

    2000-03-23

    The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed from a mechanistic perspective. Methods for mathematical modeling of gettering are reviewed and illustrated. Needs for further research are discussed.

  6. Hydrogen Uptake of DPB Getter Pellets

    SciTech Connect

    Dinh, L N; Schildbach, M A; Herberg, J L; Saab, A P; Weigle, J; Chinn, S C; Maxwell, R S; McLean II, W

    2008-05-30

    The physical and chemical properties of 1,4-diphenylbutadiyne (DPB) blended with carbon-supported Pd (DPB-Pd/C) in the form of pellets during hydrogenation were investigated. A thermogravimetric analyzer (TGA) was employed to measure the kinetics of the hydrogen uptake by the DPB getter pellets. The kinetics obtained were then used to develop a semi-empirical model, based on gas diffusion into solids, to predict the performance of the getter pellets under various conditions. The accuracy of the prediction model was established by comparing the prediction models with independent experimental data on hydrogen pressure buildup in sealed systems containing DPB getter pellets and subjected to known rates of hydrogen input. The volatility of the hydrogenated DPB products and its effects on the hydrogen uptake kinetics were also analyzed.

  7. Dominant factors of the laser gettering of silicon wafers

    SciTech Connect

    Bokhan, Yu. I. E-mail: yuibokhan@gmail.com; Kamenkov, V. S.; Tolochko, N. K.

    2015-02-15

    The laser gettering of silicon wafers is experimentally investigated. The typical gettering parameters are considered. The surfaces of laser-treated silicon wafers are investigated by microscopy. When studying the effect of laser radiation on silicon wafers during gettering, a group of factors determining the conditions of interaction between the laser beam and silicon-wafer surface and affecting the final result of treatment are selected. The main factors determining the gettering efficiency are revealed. Limitations on the desired value of the getter-layer capacity on surfaces with insufficiently high cleanness (for example, ground or matte) are established.

  8. Hydrogen and moisture getter and absorber for sealed devices

    DOEpatents

    Smith, H.M.; Schicker, J.R.

    1999-03-30

    The present invention is a hydrogen getter and method for formulating and using the getter. This getter effectively removes hydrogen gas typically present in many hermetically-sealed electronic applications where the presence of such gas would otherwise be harmful to the electronics. The getter is a non-organic composition, usable in a wide range of temperatures as compared to organic getters. Moreover, the getter is formulated to be used without the need for the presence of oxygen. The getter is comprised of effective amounts of an oxide of a platinum group metal, a desiccant, and a gas permeable binder which preferably is cured after composition in an oxygen-bearing environment at about 150 to about 205 degrees centigrade.

  9. Long-term sampling of airborne bacteria and fungi into a non-evaporating liquid

    NASA Astrophysics Data System (ADS)

    Lin, Xuejun; Reponen, Tiina A.; Willeke, Klaus; Grinshpun, Sergey A.; Foarde, Karin K.; Ensor, David S.

    Conventional sampling of bioaerosols into liquid impingers can only be performed with water or another low-viscosity liquid as the collection medium. Since these liquids evaporate quickly, sampling is generally limited to short-time periods of 15-30 min. In this study, our recently developed "BioSampler", has been used with a non-evaporating, higher viscosity liquid that does not kill nor grow microorganisms, and thus has been used to sample airborne bacteria and fungi for several hours. In side-by-side comparisons with the conventional AGI-30 impinger, sampling indoor air environments over short-time periods, the BioSampler yielded equivalent or higher culturable counts for bacteria and fungi than the AGI-30 when both samplers were operated for 30 min with 20 ml of phosphate buffer as the collection medium. The bio-efficiency of the AGI-30 decreased rapidly with sampling time until the liquid had evaporated after about 1 1/2 h. When the BioSampler was operated for 4 h with non-evaporating heavy white mineral oil, the collection efficiency decreased only moderately due to minimal reaerosolization of collected particles and gentle collection of the viable microorganisms. Samples obtained through long-term sampling with the BioSampler may detect culturable bacteria and fungi at lower ambient concentration levels than is possible through conventional liquid impingement sampling over short-time periods.

  10. Technetium getters in the near surface environment

    SciTech Connect

    KRUMHANSL,JAMES L.; ZHANG,PENGCHU; WESTRICH,HENRY R.; BRYAN,CHARLES R.; MOLECKE,MARTIN A.

    2000-05-19

    Conventional performance assessments assume that radioactive {sup 99}Tc travels as a non-sorbing component with an effective K{sub d} (distribution coefficient) of 0. This is because soil mineral surfaces commonly develop net negative surface charges and pertechnetate (TcO{sub 4}), with large ionic size and low electrical density, is not sorbed onto them. However, a variety of materials have been identified that retain Tc and may eventually lead to promising Tc getters. In assessing Tc getter performance it is important to evaluate the environment in which the getter is to function. In many contaminant plumes Tc will only leach slowly from the source of the contamination and significant dilution is likely. Thus, sub-ppb Tc concentrations are expected and normal groundwater constituents will dominate the aquifer chemistry. In this setting a variety of constituents were found to retard TcO{sub 4}: imogolite, boehmite, hydrotalcite, goethite, copper sulfide and oxide and coal. Near leaking tanks of high level nuclear waste, Tc may be present in mg/L level concentrations and groundwater chemistry will be dominated by constituents from the waste. Both bone char, and to a lesser degree, freshly precipitated Al hydroxides may be effective Tc scavengers in this environment. Thus, the search for Tc getters is far from hopeless, although much remains to be learned about the mechanisms by which these materials retain Tc.

  11. Absorption media for irreversibly gettering thionyl chloride

    DOEpatents

    Buffleben, George; Goods, Steven H.; Shepodd, Timothy; Wheeler, David R.; Whinnery, Jr., LeRoy

    2002-01-01

    Thionyl chloride is a hazardous and reactive chemical used as the liquid cathode in commercial primary batteries. Contrary to previous thinking, ASZM-TEDA.RTM. carbon (Calgon Corporation) reversibly absorbs thionyl chloride. Thus, several candidate materials were examined as irreversible getters for thionyl chloride. The capacity, rate and effect of temperature were also explored. A wide variety of likely materials were investigated through screening experiments focusing on the degree of heat generated by the reaction as well as the material absorption capacity and irreversibility, in order to help narrow the group of possible getter choices. More thorough, quantitative measurements were performed on promising materials. The best performing getter was a mixture of ZnO and ASZM-TEDA.RTM. carbon. In this example, the ZnO reacts with thionyl chloride to form ZnCl.sub.2 and SO.sub.2. The SO.sub.2 is then irreversibly gettered by ASZM-TEDA.RTM. carbon. This combination of ZnO and carbon has a high capacity, is irreversible and functions effectively above -20.degree. C.

  12. The use of synthetic hydrocalcite as a chloride-ion getter for a barrier aluminum anodization process

    SciTech Connect

    Panitz, J.K.G.; Sharp, D.J.

    1995-11-01

    Chloride ion contamination at parts per billion concentrations plaques electrochemists studying barrier anodic aluminum oxide film growth and anodic aluminum oxide capacitor manufacturers. Chloride ion contamination slows film growth and reduces film quality. We have demonstrated that synthetic hydrocalcite substantially reduces the detrimental effects of chloride ion contamination in an aqueous electrolyte commonly used to grow barrier anodic aluminum oxide. We have determined that problems arise if precautions are not taken when using synthetic hydrocalcite as a chloride-ion getter in an aqueous electrolyte. Synthetic hydrocalcite is somewhat hydrophobic. If this powder is added directly to an aqueous electrolyte, some powder disperses; some floats to the top of the bath and forms scum that locally impedes anodic film formation. Commercially available powder contains a wide range of particle sizes including submicrometer-sized particles that can escape through filters into the electrolyte and cause processing problems. These problems can be over come if (1) the getter is placed in filter bags, (2) a piece of filter paper is used to skim trace amounts of getter floating on the top of the bath, (3) dummy runs are performed to scavenge chloride-ion loaded getter micelles dispersed in the bath, and (4) substrates are rinsed with a strong stream of deionized water to remove trace amounts of powder after anodization.

  13. Eulerian CFD modeling and X-ray validation of non-evaporating diesel spray

    NASA Astrophysics Data System (ADS)

    Xue, Qingluan; Som, Sibendu; Quan, Shaoping; Pomraning, Eric; Senecal, P. K.

    2013-11-01

    This work implemented an Eulerian single-phase approach by Vallet et al. into CFD software (Convergent) for diesel spray simulations. This Eulerian approach considers liquid and gas phase as a complex mixture of a single flow with a highly variable density to describe the near nozzle dense sprays. The mean density is obtained form the Favre-averaged liquid mass fraction. Liquid mass fraction is transported with a model for the turbulent liquid diffusion flux into the gas. A mean gradient-based model is employed for the diffusion flux in this study. A non-evaporating diesel spray was measured using x-ray radiography at Argonne National Laboratory. The quantitative and time-resolved data of liquid penetration and mass distribution in the dense spray region are used to validate this approach. The different turbulence models are also used for the simulations. The comparison between the simulated results and experimental data and the turbulence model effect are discussed.

  14. The Hydriding Kinetics of Organic Hydrogen Getters

    SciTech Connect

    Powell, G. L.

    2002-02-11

    The aging of hermetically sealed systems is often accompanied by the gradual production of hydrogen gas that is a result of the decay of environmental gases and the degradation of organic materials. In particular, the oxygen, water, hydrogen ''equilibrium'' is affected by the removal of oxygen due the oxidation of metals and organic materials. This shift of the above ''equilibrium'' towards the formation of hydrogen gas, particularly in crevices, may eventually reach an explosive level of hydrogen gas or degrade metals by hydriding them. The latter process is generally delayed until the oxidizing species are significantly reduced. Organic hydrogen getters introduced by Allied Signal Aerospace Company, Kansas City Division have proven to be a very effective means of preventing hydrogen gas accumulation in sealed containers. These getters are relatively unaffected by air and environmental gases. They can be packaged in a variety of ways to fit particular needs such as porous pellets, fine or coarse [gravel] powder, or loaded into silicone rubber. The hydrogen gettering reactions are extremely irreversible since the hydrogen gas is converted into an organic hydrocarbon. These getters are based on the palladium-catalyzed hydrogenation of triple bonds to double and then single bonds in aromatic aryl compounds. DEB (1,4 bis (phenyl ethynyl) benzene) typically mixed with 25% by weight carbon with palladium (1% by weight of carbon) is one of the newest and best of these organic hydrogen getters. The reaction mechanisms are complex involving solid state reaction with a heterogeneous catalyst leading to the many intermediates, including mixed alkyl and aryl hydrocarbons with the possibilities of many isomers. The reaction kinetics mechanisms are also strongly influenced by the form in which they are packaged. For example, the hydriding rates for pellets and gravel have a strong dependence on reaction extent (i.e., DEB reduction) and a kinetic order in pressure of 0

  15. Copper gettering by aluminum precipitates in aluminum-implanted silicon

    SciTech Connect

    PETERSEN,GARY A.; MYERS JR.,SAMUEL M.

    2000-03-20

    Copper in Si is shown to be strongly gettered by Al-rich precipitates formed by implanting Al to supersaturation and followed by annealing. At temperatures ranging from 600 to 800 C a layer containing Al precipitates is found to getter Cu from Cu silicide located on the opposite side of a 0.25-mm Si wafer, indicating a substantially lower chemical potential for the Cu in the molten-A1 phase. Cu gettering proceeds rapidly until an atomic ratio of approximately 2 Cu atoms to 1 Al atom is reached in the precipitated Al region, after which the gettering process slows. Redistribution of Cu from one Al-rich layer to another at low Cu concentrations demonstrates that a segregation-type gettering mechanism is operating. Cu gettering occurs primarily in the region containing the precipitated Al rather than the region where the Al is entirely substitutional.

  16. Tritium gettering from air with hydrogen uranyl phosphate

    SciTech Connect

    Souers, P.C.; Uribe, F.S.; Stevens, C.G.; Tsugawa, R.T.

    1985-01-01

    Hydrogen uranyl phosphate (HUP), a solid proton electrolyte, getters tritium gas and water vapor from air by DC electrical action. We have reduced the formation of residual tritiated water to less than 2%, and demonstrated that HUP can clean a 5.5 m/sup 3/ working glove box. Data are presented to illustrate the parameters of the gettering and a model is derived. Two other tritium gettering electrolytes have been discovered. 9 refs., 5 figs., 3 tabs.

  17. Getter pump for hydrogen and hydrocarbon gases

    DOEpatents

    Hsu, Wen L.

    1989-01-01

    A gettering device for hydrogen isotopes and gaseous hydrocarbons based on the interaction of a plasma and graphite used as cathodic material. The plasma is maintained at a current density within the range of about 1 to about 1000 mA/cm.sup.2. The graphite may be heated to a temperature greater than 1000.degree. C. The new device offers high capacity, low noise, and gas species selectivity.

  18. Getter pump for hydrogen and hydrocarbon gases

    DOEpatents

    Hsu, Wen Ling

    1987-10-14

    A gettering device for hydrogen isotopes and gaseous hydrocarbons based on the interaction of a plasma and graphite used as cathodic material. The plasma is maintained at a current density within the range of about 1 to about 1000 mA/cm/sup 2/. The graphite may be heated to a temperature greater than 1000/degree/C. The new device offers high capacity, low noise, and gas species selectivity. 2 figs.

  19. Mechanisms of transition-metal gettering in silicon

    SciTech Connect

    Myers, S. M.; Seibt, M.; Schroeter, W.

    2000-10-01

    The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. (c) 2000 American Institute of Physics.

  20. Non-evaporative effects of a wet mid layer on heat transfer through protective clothing.

    PubMed

    Bröde, Peter; Havenith, George; Wang, Xiaoxin; Candas, Victor; den Hartog, Emiel A; Griefahn, Barbara; Holmér, Ingvar; Kuklane, Kalev; Meinander, Harriet; Nocker, Wolfgang; Richards, Mark

    2008-09-01

    In order to assess the non-evaporative components of the reduced thermal insulation of wet clothing, experiments were performed with a manikin and with human subjects in which two layers of underwear separated by an impermeable barrier were worn under an impermeable overgarment at 20 degrees C, 80% RH and 0.5 ms(-1) air velocity. By comparing manikin measurements with dry and wetted mid underwear layer, the increase in heat loss caused by a wet layer kept away from the skin was determined, which turned out to be small (5-6 W m(-2)), irrespective of the inner underwear layer being dry or wetted, and was only one third of the evaporative heat loss calculated from weight change, i.e. evaporative cooling efficiency was far below unity. In the experiments with eight males, each subject participated in two sessions with the mid underwear layer either dry or wetted, where they stood still for the first 30 min and then performed treadmill work for 60 min. Reduced heat strain due to lower insulation with the wetted mid layer was observed with decreased microclimate and skin temperatures, lowered sweat loss and cardiac strain. Accordingly, total clothing insulation calculated over the walking period from heat balance equations was reduced by 0.02 m(2) degrees C W(-1) (16%), while for the standing period the same decrease in insulation, representing 9% reduction only showed up after allowing for the lower evaporative cooling efficiency in the calculations. As evaporation to the environment and inside the clothing was restricted, the observed small alterations may be attributed to the wet mid layer's increased conductivity, which, however, appears to be of minor importance compared to the evaporative effects in the assessment of the thermal properties of wet clothing. PMID:18084775

  1. Hydrogen gas getters: Susceptibility to poisoning

    SciTech Connect

    Mroz, E.J.; Dye, R.C.; Duke, J.R.; Weinrach, J.

    1998-12-31

    About 40% ({approximately}9,000) of the {approximately}23,000 transuranic (TRU) waste drums at Los Alamos National Laboratory (LANL) are presently unshippable because conservative calculations suggest that the hydrogen concentration may exceed the lower explosive limit for hydrogen. This situation extends across nearly all DOE sites holding and generating TRU waste. The incorporation of a hydrogen getter such as DEB into the waste drums (or the TRUPACT II shipping containers) could substantially mitigate the explosion risk. The result would be to increase the number of drums that qualify for transportation to the Waste Isolation Pilot Plant (WIPP) without having to resort to expensive re-packaging or waste treatment technologies. However, before this approach can be implemented, key technical questions must be answered. Foremost among these is the question of whether the presence of other chemical vapors and gases in the drum might poison the catalytic reaction between hydrogen and DEB. This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The objective of this project was to obtain fundamental information on the chemical mechanism of the catalytic reaction of hydrogen with one commonly used hydrogen getter, DEB. Experiments with these materials showed that the method of exposure affects the nature of the reaction products. The results of this work contributed to the development of a mechanistic model of the reaction.

  2. Characterization of and Ti Gettering for PV Substrates: Final Subcontract Report; 28 January 1998 - 28 August 2001

    SciTech Connect

    Rozgonyi, G. A.; Karoui, A.; Romanowski, A.; Kordas, L.

    2002-06-01

    This report describes two project objectives: to determine optical and gettering properties of titanium and titanium oxy-nitride films, and to examine the influence of carrier recombination processes on the microwave reflection coefficient in the frequency domain such that PV materials parameters could be evaluated nondestructively. A third topic was added as the main focus, wherein we carried out a detailed characterization study of dislocated, high-purity, float-zone crystals grown at NREL. These crystals were compared with nitrogen-doped CZ wafers. The accompanying report has a chapter devoted to each of these topics: (1) characterization of controlled defect/impurity growth of float-zone crystals; (2) contactless characterization of silicon wafers using frequency-resolved photoconductance decay; and (3) gettering and surface reflectivity of Ti thin films.

  3. User’s Guide for Getter Rate Test System

    SciTech Connect

    Elmore, Monte R.

    2007-06-27

    This User’s Guide describes the operation and maintenance of the Getter Rate Test System, including the mechanical equipment, instrumentation, and datalogger/computer components. The Getter Rate Test System includes equipment and instrumentation to conduct two getter rate tests simultaneously. The mechanical equipment comprises roughing and high-vacuum pumps, heated test chambers, standard hydrogen leaks, and associated piping and valves. Instrumentation includes thermocouples, pressure (vacuum) transducers, panel displays, analog-to-digital signal converter, and associated wiring. The datalogger/computer is a stand-alone computer with installed software to allow the user to record data input from the pressure transducers to data files and to calculate the getter rate from the data in an Excel® spreadsheet.

  4. Technetium Getters to Improve Cast Stone Performance

    SciTech Connect

    Neeway, James J.; Lawter, Amanda R.; Serne, R. Jeffrey; Asmussen, Robert M.; Qafoku, Nikolla

    2015-10-15

    The cementitious material known as Cast Stone has been selected as the preferred waste form for solidification of aqueous secondary liquid effluents from the Hanford Tank Waste Treatment and Immobilization Plant (WTP) process condensates and low-activity waste (LAW) melter off-gas caustic scrubber effluents. Cast Stone is also being evaluated as a supplemental immobilization technology to provide the necessary LAW treatment capacity to complete the Hanford tank waste cleanup mission in a timely and cost effective manner. Two radionuclides of particular concern in these waste streams are technetium-99 (99Tc) and iodine-129 (129I). These radioactive tank waste components contribute the most to the environmental impacts associated with the cleanup of the Hanford site. A recent environmental assessment of Cast Stone performance, which assumes a diffusion controlled release of contaminants from the waste form, calculates groundwater in excess of the allowable maximum permissible concentrations for both contaminants. There is, therefore, a need and an opportunity to improve the retention of both 99Tc and 129I in Cast Stone. One method to improve the performance of Cast Stone is through the addition of “getters” that selectively sequester Tc and I, therefore reducing their diffusion out of Cast Stone. In this paper, we present results of Tc and I removal from solution with various getters with batch sorption experiments conducted in deionized water (DIW) and a highly caustic 7.8 M Na Ave LAW simulant. In general, the data show that the selected getters are effective in DIW but their performance is comprised when experiments are performed with the 7.8 M Na Ave LAW simulant. Reasons for the mitigated performance in the LAW simulant may be due to competition with Cr present in the 7.8 M Na Ave LAW simulant and to a pH effect.

  5. Impurity and recycling control with gettering in ATF

    SciTech Connect

    Simpkins, J.E.; Mioduszewski, P.K.; Isler, R.C.

    1991-01-01

    The vacuum vessel of the Advanced Toroidal Facility (ATF) is Ti-gettered with a surface coverage of 70%. The major effects of gettering are: (1) reduction of the oxygen, carbon, and nitrogen content in the plasma and (2) improved density control due to wall pumping of the working gas hydrogen. The overall leak rate in ATF is 2{times}10{sup {minus}4} Torr-l/s which is too high for successful plasma operation. Ti-gettering is routinely employed every morning prior to operation and compensates for this shortcoming by reducing the partial pressure of nitrogen and other residual gas components to the low 10{sup {minus}9} Torr range which is close to the RGA background pressure. Rate-of-rise measurements at this stage show only argon and some methane. The argon is used to monitor the leak rate. In addition to impurity reduction, gettering leads to low recycling of the working gas which appears to be crucial for density control in ATF. The capacity of the gettered surface is large enough to show a strong effect even after 24 hours. An extensive data base on the short-term and long-term effects of gettering on the residual gas composition and its effects on plasma performance has been established over the past three years and will be discussed in this paper. 9 refs., 7 figs.

  6. Getters for Tc and I Removal from Liquid Waste

    NASA Astrophysics Data System (ADS)

    Qafoku, N. P.; Asmussen, M.; Lawter, A.; Neeway, J.; Smith, G.

    2015-12-01

    A cementitious waste form, Cast Stone, is being evaluated as a possible supplemental waste form for the low activity waste (LAW) at the Hanford Site, which contains significant amounts of radioactive 99Tc and 129I, as part of the tank waste cleanup mission. To improve the retention of Tc and/or I in Cast Stone, materials with a high affinity for Tc and/or I, termed "getters," can be added to decrease the rate of contaminant release and diffusivity, and improve Cast Stone performance. A series of kinetic batch sorption experiments was performed to determine the effectiveness of the getter materials. Several Tc getters [blast furnace slag, Sn (II) apatite, SnCl2, nanoporous Sn phosphate, KMS-2 (a potassium-metal-sulfide), and Sn(II) hydroxyapatite] and I getters [layered Bi hydroxide, natural argentite mineral, synthetic argentite, Ag-impregnated carbon, and Ag-exchanged zeolite] were tested in different solution media, 18.2 MΩ DI H2O and a caustic LAW waste simulant containing 6.5 M Na or 7.8 M Na. The experiments were conducted at room temperature in the presence or absence of air. Results indicated that most Tc getters (with the exception of KMS-2) performed better in the DI H2O solution than in the 6.5 and 7.8 M Na LAW simulant. In addition, Tc sequestration may be affected by the presence of other redox sensitive elements that were present in the LAW simulant, such as Cr. The Tc getter materials have been examined through various solid-state characterization techniques such as XRD, SEM/EDS, XANES and EXAFS which provided evidence for plausible mechanisms of aqueous Tc removal. The results indicated that the Tc precipitates differ depending on the getter material and that Tc(VII) is reduced to Tc(IV) in most of the getters but to a differing extents. For the I getters, Ag-exchanged zeolite and synthetic argentite were the most effective ones. The other I getters showed limited effectiveness for sorbing I under the high ionic strength and caustic

  7. Results of applying a non-evaporative mitigation technique to laser-initiated surface damage on fused-silica

    SciTech Connect

    Adams, J J; Bolourchi, M; Bude, J D; Guss, G M; Matthews, M J; Nostrand, M C

    2010-10-26

    We present results from a study to determine an acceptable CO{sub 2} laser-based non-evaporative mitigation protocol for use on surface damage sites in fused-silica optics. A promising protocol is identified and evaluated on a set of surface damage sites created under ICF-type laser conditions. Mitigation protocol acceptability criteria for damage re-initiation and growth, downstream intensification, and residual stress are discussed. In previous work, we found that a power ramp at the end of the protocol effectively minimizes the residual stress (<25 MPa) left in the substrate. However, the biggest difficulty in determining an acceptable protocol was balancing between low re-initiation and problematic downstream intensification. Typical growing surface damage sites mitigated with a candidate CO{sub 2} laser-based mitigation protocol all survived 351 nm, 5 ns damage testing to fluences >12.5 J/cm{sup 2}. The downstream intensification arising from the mitigated sites is evaluated, and all but one of the sites has 100% passing downstream damage expectation values. We demonstrate, for the first time, a successful non-evaporative 10.6 {micro}m CO{sub 2} laser mitigation protocol applicable to fused-silica optics used on fusion-class lasers like the National Ignition Facility (NIF).

  8. Improved Hydrogen Gas Getters for TRU Waste -- Final Report

    SciTech Connect

    Mark Stone; Michael Benson; Christopher Orme; Thomas Luther; Eric Peterson

    2005-09-01

    Alpha radiolysis of hydrogenous waste and packaging materials generates hydrogen gas in radioactive storage containers. For that reason, the Nuclear Regulatory Commission limits the flammable gas (hydrogen) concentration in the Transuranic Package Transporter-II (TRUPACT-II) containers to 5 vol% of hydrogen in air, which is the lower explosion limit. Consequently, a method is needed to prevent the build up of hydrogen to 5 vol% during the storage and transport of the TRUPACT-II containers (up to 60 days). One promising option is the use of hydrogen getters. These materials scavenge hydrogen from the gas phase and irreversibly bind it in the solid phase. One proven getter is a material called 1,4-bis (phenylethynyl) benzene, or DEB, characterized by the presence of carbon-carbon triple bonds. Carbon may, in the presence of suitable precious metal catalysts such as palladium, irreversibly react with and bind hydrogen. In the presence of oxygen, the precious metal may also eliminate hydrogen by catalyzing the formation of water. This reaction is called catalytic recombination. DEB has the needed binding rate and capacity for hydrogen that potentially could be generated in the TRUPACT II. Phases 1 and 2 of this project showed that uncoated DEB performed satisfactorily in lab scale tests. Based upon these results, Phase 3, the final project phase, included larger scale testing. Test vessels were scaled to replicate the ratio between void space in the inner containment vessel of a TRUPACT-II container and a payload of seven 55-gallon drums. The tests were run with an atmosphere of air for 63.9 days at ambient temperature (15-27°C) and a scaled hydrogen generation rate of 2.60E-07 moles per second (0.35 cc/min). A second type of getter known as VEI, a proprietary polymer hydrogen getter characterized by carbon-carbon double bonds, was also tested in Phase 3. Hydrogen was successfully “gettered” by both getter systems. Hydrogen concentrations remained below 5 vol% (in

  9. Technetium and Iodine Getters to Improve Cast Stone Performance

    SciTech Connect

    Qafoku, Nikolla; Neeway, James J.; Lawter, Amanda R.; Levitskaia, Tatiana G.; Serne, R. Jeffrey; Westsik, Joseph H.; Snyder, Michelle MV

    2014-07-01

    To determine the effectiveness of the various getter materials prior to their solidification in Cast Stone, a series of batch sorption experiments was performed at Pacific Northwest National Laboratory. To quantify the effectiveness of the removal of Tc(VII) and I(I) from solution by getters, the distribution coefficient, Kd (mL/g), was calculated. Testing involved placing getter material in contact with spiked waste solutions at a 1:100 solid-to-solution ratio for periods up to 45 days with periodic solution sampling. One Tc getter was also tested at a 1:10 solid-to-solution ratio. Two different solution media, 18.2 MΩ deionized water (DI H2O) and a 7.8 M Na LAW simulant, were used in the batch sorption tests. Each test was conducted at room temperature in an anoxic chamber containing N2 with a small amount of H2 (0.7%) to maintain anoxic conditions. Each getter-solution combination was run in duplicate. Three Tc- and I-doping concentrations were used separately in aliquots of both the 18.2 MΩ DI H2O and a 7.8 M Na LAW waste simulant. The 1× concentration was developed based on Hanford Tank Waste Operations Simulator (HTWOS) model runs to support the River Protection Project System Plan Revision 6. The other two concentrations were 5× and 10× of the HTWOS values. The Tc and I tests were run separately (i.e., the solutions did not contain both solutes). Sampling of the solid-solution mixtures occurred nominally after 0.2, 1, 3, 6, 9, 12, 15 days and ~35 to 45 days. Seven getter materials were tested for Tc and five materials were tested for I. The seven Tc getters were blast furnace slag 1 (BFS1) (northwest source), BFS2 (southeast source), Sn(II)-treated apatite, Sn(II) chloride, nano tin phosphate, KMS (a potassium-metal-sulfide), and tin hydroxapatite. The five iodine getters were layered bismuth hydroxide (LBH), argentite mineral, synthetic argentite, silver-treated carbon, and silver-treated zeolite. The Tc Kd values measured from experiments conducted

  10. Technetium and Iodine Getters to Improve Cast Stone Performance

    SciTech Connect

    Qafoku, Nikolla; Neeway, James J.; Lawter, Amanda R.; Levitskaia, Tatiana G.; Serne, R. Jeffrey; Westsik, Joseph H.; Snyder, Michelle MV

    2015-02-19

    To determine the effectiveness of the various getter materials prior to their solidification in Cast Stone, a series of batch sorption experiments was performed at Pacific Northwest National Laboratory. To quantify the effectiveness of the removal of Tc(VII) and I(I) from solution by getters, the distribution coefficient, Kd (mL/g), was calculated. Testing involved placing getter material in contact with spiked waste solutions at a 1:100 solid-to-solution ratio for periods up to 45 days with periodic solution sampling. One Tc getter was also tested at a 1:10 solid-to-solution ratio. Two different solution media, 18.2 MΩ deionized water (DI H2O) and a 7.8 M Na LAW simulant, were used in the batch sorption tests. Each test was conducted at room temperature in an anoxic chamber containing N2 with a small amount of H2 (0.7%) to maintain anoxic conditions. Each getter-solution combination was run in duplicate. Three Tc- and I-doping concentrations were used separately in aliquots of both the 18.2 MΩ DI H2O and a 7.8 M Na LAW waste simulant. The 1× concentration was developed based on Hanford Tank Waste Operations Simulator (HTWOS) model runs to support the River Protection Project System Plan Revision 6. The other two concentrations were 5× and 10× of the HTWOS values. The Tc and I tests were run separately (i.e., the solutions did not contain both solutes). Sampling of the solid-solution mixtures occurred nominally after 0.2, 1, 3, 6, 9, 12, 15 days and ~35 to 45 days. Seven getter materials were tested for Tc and five materials were tested for I. The seven Tc getters were blast furnace slag 1 (BFS1) (northwest source), BFS2 (southeast source), Sn(II)-treated apatite, Sn(II) chloride, nano tin phosphate, KMS (a potassium-metal-sulfide), and tin hydroxapatite. The five iodine getters were layered bismuth hydroxide (LBH), argentite mineral, synthetic argentite, silver-treated carbon, and silver-treated zeolite. The Tc Kd values measured from experiments conducted

  11. A comparison of gettering in single- and multicrystalline silicon for solar cells

    SciTech Connect

    Sopori, B.L.; Jastrzebski, L.; Tan, T.

    1996-05-01

    The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.

  12. An issue paper on the use of hydrogen getters in transportation packaging

    SciTech Connect

    NIGREY,PAUL J.

    2000-02-01

    The accumulation of hydrogen is usually an undesirable occurrence because buildup in sealed systems pose explosion hazards under certain conditions. Hydrogen scavengers, or getters, can avert these problems by removing hydrogen from such environments. This paper provides a review of a number of reversible and irreversible getters that potentially could be used to reduce the buildup of hydrogen gas in containers for the transport of radioactive materials. In addition to describing getters that have already been used for such purposes, novel getters that might find application in future transport packages are also discussed. This paper also discusses getter material poisoning, the use of getters in packaging, the effects of radiation on getters, the compatibility of getters with packaging, design considerations, regulatory precedents, and makes general recommendations for the materials that have the greatest applicability in transport packaging. At this time, the Pacific Northwest National Laboratory composite getter, DEB [1,4-(phenylethylene)benzene] or similar polymer-based getters, and a manganese dioxide-based getter appear to be attractive candidates that should be further evaluated. These getters potentially can help prevent pressurization from radiolytic reactions in transportation packaging.

  13. Timing of Getter Material Addition in Cementitious Wasteforms

    NASA Astrophysics Data System (ADS)

    Lawter, A.; Qafoku, N. P.; Asmussen, M.; Neeway, J.; Smith, G. L.

    2015-12-01

    A cementitious waste form, Cast Stone, is being evaluated as a possible supplemental immobilization technology for the Hanford sites's low activity waste (LAW), which contains radioactive 99Tc and 129I, as part of the tank waste cleanup mission. Cast Stone is made of a dry blend 47% blast furnace slag, 45% fly ash, and 8% ordinary Portland cement, mixed with a low-activity waste (LAW). To improve the retention of Tc and/or I in Cast Stone, materials with a high affinity for Tc and/or I, termed "getters," can be added to provide a stable domain for the radionuclides of concern. Previous testing conducted with a variety of getters has identified Tin(II)-Apatite and Silver Exchanged Zeolite as promising candidates for Tc and I, respectively. Investigation into the sequence in which getters are added to Cast Stone was performed following two methods: 1) adding getters to the Cast Stone dry blend, and then mixing with liquid waste, and 2) adding getters to the liquid waste first, followed by addition of the Cast Stone dry blend. Cast Stone monolith samples were prepared with each method and leach tests, following EPA method 1315, were conducted in either distilled water or simulated vadose zone porewater for a period of up to 63 days. The leachate was analyzed for Tc, I, Na, NO3-, NO2- and Cr with ICP-MS, ICP-OES and ion chromatography and the results indicated that the Cast Stone with getter addition in the dry blend mix (method 1) has lower rates of Tc and I leaching. The mechanisms of radionuclide release from the Cast Stone were also investigated with a variety of solid phase characterization techniques of the monoliths before and after leaching, such as XRD, SEM/EDS, TEM/SAED and other spectroscopic techniques.

  14. Assuring ultra-clean environments in microsystem packages : irreversible and reversible getters.

    SciTech Connect

    Zifer, Thomas; Whinnery, LeRoy L., Jr.; Hollenshead, Jeromy Todd; Buffleben, George M.; McElhanon, James Ross; Nilson, Robert H.

    2003-11-01

    A new generation of irreversible, chemically reacting getters specifically targeted toward assuring the integrity of the local environment within microsystem packages were developed and evaluated. These reactive getters incorporate volatile species into a polymer through covalent bonds, thus producing a non-volatile product. These reactive getters will be combined with getters that rely on absorption media (e.g. zeolites and high surface area carbon fibers) to scavenge non-reactive species, like solvents. Our getter systems will rely on device packaging to limit exchange between the microsystem and the global environment. Thus, the internal getters need only provide local environmental control within the microsystem package. A series of experiments were conducted to determine uptake rates and capacities absorption and reactive-based getters. Diffusion rates through the binder used to hold the getter particles together were also investigated. Getters were evaluated in environments with a saturated headspace and with a limited amount of the volatile species of interest. One- and two-dimensional numerical models and analysis techniques have been developed and used to predict the transport of contaminant species within a representative microsystem package consisting of an open gas-filled volume adjacent to a polymer layer containing embedded particles of getter. The two-dimensional model features explicit representation of the individual getter particles while the one-dimensional treatment assumes a homogeneous distribution of getter material within the getterlpolymer layer. Example calculations illustrate the dependence of getter performance on reaction rates, polymer diffusivity, and getter particle volume fraction. In addition, the model is used to deduce surface reaction rates, solid phase diffusivities, and maximum-loading densities by least-squares fitting of model predictions to measured histories of gas-phase contaminant concentration and getter weight gain.

  15. Impurity gettering in silicon using cavities formed by helium implantation and annealing

    DOEpatents

    Myers, S.M. Jr.; Bishop, D.M.; Follstaedt, D.M.

    1998-11-24

    Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer. 4 figs.

  16. Impurity gettering in silicon using cavities formed by helium implantation and annealing

    DOEpatents

    Myers, Jr., Samuel M.; Bishop, Dawn M.; Follstaedt, David M.

    1998-01-01

    Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon dangling bonds. For two representative transition-metal impurities, copper and nickel, the binding energies at cavities were demonstrated to be larger than the binding energies in precipitates of metal silicide, which constitutes the basis of most current impurity gettering. As a result the residual concentration of such impurities after cavity gettering is smaller by several orders of magnitude than after precipitation gettering. Additionally, cavity gettering is effective regardless of the starting impurity concentration in the wafer, whereas precipitation gettering ceases when the impurity concentration reaches a characteristic solubility determined by the equilibrium phase diagram of the silicon-metal system. The strong cavity gettering was shown to induce dissolution of metal-silicide particles from the opposite side of a wafer.

  17. Nuclear breeder reactor fuel element with silicon carbide getter

    DOEpatents

    Christiansen, David W.; Karnesky, Richard A.

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  18. Gettering of Hydrogen and Methane from a Helium Gas Mixture

    SciTech Connect

    Cardenas, Rosa E.; Stewart, Kenneth D.; Cowgill, Donald F.

    2014-10-21

    In our study, the authors developed an approach for accurately quantifying the helium content in a gas mixture also containing hydrogen and methane using commercially available getters. The authors performed a systematic study to examine how both H2 and CH4 can be removed simultaneously from the mixture using two SAES St 172® getters operating at different temperatures. The remaining He within the gas mixture can then be measured directly using a capacitance manometer. Moreover, the optimum combination involved operating one getter at 650°C to decompose the methane, and the second at 110°C to remove the hydrogen. Finally, this approach eliminated the need to reactivate the getters between measurements, thereby enabling multiple measurements to be made within a short time interval, with accuracy better than 1%. The authors anticipate that such an approach will be particularly useful for quantifying the He-3 in mixtures that include tritium, tritiated methane, and helium-3. The presence of tritiated methane, generated by tritium activity, often complicates such measurements.

  19. Titanium-nitrogen reaction investigated for application to gettering systems

    NASA Technical Reports Server (NTRS)

    Arntzen, J. D.; Coleman, L. F.; Kyle, M. L.; Pierce, R. D.

    1968-01-01

    Titanium is one of several gettering materials available for removing nitrogen from inert gases. The reaction rate of titanium-metal sponge and nitrogen in argon-nitrogen mixtures was studied at 900 degrees C. The rate was found to depend upon the partial pressure of nitrogen in the gas phase. Mathematical relationships simulate titanium systems.

  20. Gettering of Hydrogen and Methane from a Helium Gas Mixture

    DOE PAGESBeta

    Cardenas, Rosa E.; Stewart, Kenneth D.; Cowgill, Donald F.

    2014-10-21

    In our study, the authors developed an approach for accurately quantifying the helium content in a gas mixture also containing hydrogen and methane using commercially available getters. The authors performed a systematic study to examine how both H2 and CH4 can be removed simultaneously from the mixture using two SAES St 172® getters operating at different temperatures. The remaining He within the gas mixture can then be measured directly using a capacitance manometer. Moreover, the optimum combination involved operating one getter at 650°C to decompose the methane, and the second at 110°C to remove the hydrogen. Finally, this approach eliminatedmore » the need to reactivate the getters between measurements, thereby enabling multiple measurements to be made within a short time interval, with accuracy better than 1%. The authors anticipate that such an approach will be particularly useful for quantifying the He-3 in mixtures that include tritium, tritiated methane, and helium-3. The presence of tritiated methane, generated by tritium activity, often complicates such measurements.« less

  1. Gettering of hydrogen and methane from a helium gas mixture

    SciTech Connect

    Cárdenas, Rosa Elia; Stewart, Kenneth D.; Cowgill, Donald F.

    2014-11-01

    In this study, the authors developed an approach for accurately quantifying the helium content in a gas mixture also containing hydrogen and methane using commercially available getters. The authors performed a systematic study to examine how both H{sub 2} and CH{sub 4} can be removed simultaneously from the mixture using two SAES St 172{sup ®} getters operating at different temperatures. The remaining He within the gas mixture can then be measured directly using a capacitance manometer. The optimum combination involved operating one getter at 650 °C to decompose the methane, and the second at 110 °C to remove the hydrogen. This approach eliminated the need to reactivate the getters between measurements, thereby enabling multiple measurements to be made within a short time interval, with accuracy better than 1%. The authors anticipate that such an approach will be particularly useful for quantifying the He-3 in mixtures that include tritium, tritiated methane, and helium-3. The presence of tritiated methane, generated by tritium activity, often complicates such measurements.

  2. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE PAGESBeta

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  3. Exceptional gettering response of epitaxially grown kerfless silicon

    NASA Astrophysics Data System (ADS)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-01

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500× during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentration of point defects (likely Pt) is "locked in" during fast (60 °C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomerates at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. Device simulations suggest a solar-cell efficiency potential of this material >23%.

  4. Hydrogen gettering the overpressure gas from highly radioactive liquids

    SciTech Connect

    Riley, D.L.; McCoy, J.C.; Schicker, J.R.

    1996-04-01

    Remediation of current inventories of high-activity radioactive liquid waste (HALW) requires transportation of Type-B quantities of radioactive material, possibly up to several hundred liters. However, the only currently certified packaging is limited to quantities of 50 ml (0.01 gal) quantities of Type-B radioactive liquid. Efforts are under way to recertify the existing packaging to allow the shipment of up to 4 L (1.1 gal) of Type-B quantities of HALW, but significantly larger packaging could be needed in the future. Scoping studies and preliminary designs have identified the feasibility of retrofitting an insert into existing casks, allowing the transport of up to 380 L (100 gal) of HALW. However, the insert design and ultimate certification strategy depend heavily on the gas-generating attributes of the HALW. A non-vented containment vessel filled with HALW, in the absence of any gas-mitigation technologies, poses a deflagration threat and, therefore, gas generation, specifically hydrogen generation, must be reliably controlled during all phases of transportation. Two techniques are available to mitigate hydrogen accumulation: recombiners and getters. Getters have an advantage over recombiners in that oxides are not required to react with the hydrogen. A test plan was developed to evaluate three forms of getter material in the presence of both simulated HALW and the gases that are produced by the HALW. These tests demonstrated that getters can react with hydrogen in the presence of simulated waste and in the presence of several other gases generated by the HALW, such as nitrogen, ammonia, nitrous oxide, and carbon monoxide. Although the use of such a gettering system has been shown to be technically feasible, only a preliminary design for its use has been completed. No further development is planned until the requirement for bulk transport of Type-B quantities of HALW is more thoroughly defined.

  5. Fe gettering by p + layer in bifacial Si solar cell fabrication

    NASA Astrophysics Data System (ADS)

    Terakawa, T.; Wang, D.; Nakashima, H.

    2006-04-01

    Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5×10 12-2.0×10 14 cm -3 were annealed at 600 °C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p + layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination <1×10 13 cm -3 but effective for the sample with middle level contamination of 1-5×10 13 cm -3. In contrast, the samples with p + layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p + layer are discussed in details.

  6. Explosive composition with group VIII metal nitroso halide getter

    DOEpatents

    Walker, F.E.; Wasley, R.J.

    1982-06-22

    An improved explosive composition is disclosed and comprises a major portion of an explosive having a detonation velocity between about 1,500 and 10,000 meters per second and a minor amount of a getter additive comprising a non-explosive compound or mixture of non-explosive compounds capable of chemically reacting with free radicals or ions under shock initiation conditions of 2,000 calories/cm[sup 2] or less of energy fluence.

  7. Explosive composition with group VIII metal nitroso halide getter

    DOEpatents

    Walker, Franklin E.; Wasley, Richard J.

    1982-01-01

    An improved explosive composition is disclosed and comprises a major portion of an explosive having a detonation velocity between about 1,500 and 10,000 meters per second and a minor amount of a getter additive comprising a non-explosive compound or mixture of non-explosive compounds capable of chemically reacting with free radicals or ions under shock initiation conditions of 2,000 calories/cm.sup.2 or less of energy fluence.

  8. Method of gettering hydrogen under conditions of low pressure

    DOEpatents

    Mendelsohn, M.H.; Gruen, D.M.

    1983-08-09

    A ternary intermetallic compound having the formula Zr(V[sub 1[minus]x]Cr[sub x])[sub 2] where x is in the range of 0.01 to 0.90 is capable of reversibly sorbing hydrogen at temperatures ranging from room temperature to 200 C, at pressures down to 10[sup [minus]6] Torr. The compound is suitable for use as a hydrogen getter in low pressure, high temperature applications such as magnetic confinement fusion devices. 3 figs.

  9. Method of gettering hydrogen under conditions of low pressure

    DOEpatents

    Mendelsohn, Marshall H.; Gruen, Dieter M.

    1983-01-01

    A ternary intermetallic compound having the formula Zr(V.sub.1-x Cr.sub.x).sub.2 where x is in the range of 0.01 to 0.90 is capable of reversibly sorbing hydrogen at temperatures ranging from room temperature to 200.degree. C., at pressures down to 10.sup.-6 Torr. The compound is suitable for use as a hydrogen getter in low pressure, high temperature applications such as magnetic confinement fusion devices.

  10. DPB hydrogen getters on Pd (110) - its action and the effect of impurities

    SciTech Connect

    Maiti, A; Gee, R

    2005-03-11

    Density Functional Theory (DFT) is used to investigate the action of hydrogen getter 1,4-diphenyl-butadiyne, or DPB, on Pd(110) surface. We study reaction pathways and energetics of several relevant processes, including H{sub 2} adsorption, dissociation and migration on the metal surface, getter-metal interaction, and the energetics of H uptake by the getter. We also explore the effect of impurities like CO and CO{sub 2} on the action of the getter. Activation barriers for certain reactions are computed to shed light on the feasibility of such processes at room temperature.

  11. Decreases in deuterium pumping by St707 getter alloy caused by carbon dioxide preexposure

    SciTech Connect

    Malinowski, M.E.

    1985-05-01

    Intentional passivation of the deuterium pumping of the solid getter alloy St707 has been attempted by exposing samples of St707 to carbon dioxide at different pressures, temperatures and exposure times relevant for application to the getter modules in the ALT-I pump limiter. It was found that one of the most effective treatments examined was a 30 min, 1 Torr exposure at approximately 100 /sup 0/C. This preexposure kept the getter pumping speed less than 0.001 of its rated value for about 3 min when exposed to deuterium at 1 Torr and 30 /sup 0/C. After this ''incubation'' period, the getter speed increases to values greater than approx.1% of fully activated values. If left under high deuterium pressure, the getter eventually flakes off the substrate. Video observations of the flaking process indicate that individual particles leave the constantan getter substrate at velocities of 1 m/s. Attempts at passivating the getter using oxygen and carbon monoxide were found to be no more effective than using carbon dioxide, suggesting that there is no way to completely passivate the getter with these gases at pressures low enough for application to in situ getter arrays used in tokamaks.

  12. Efficient oxygen gettering in Si by coimplantation of hydrogen and helium

    SciTech Connect

    Ou Xin; Koegler, Reinhard; Muecklich, Arndt; Skorupa, Wolfgang; Moeller, Wolfhard; Wang Xi; Gerlach, Juergen W.; Rauschenbach, Bernd

    2008-10-20

    Hydrogen preimplantation performed in addition to helium implantation efficiently shrinks the width of the gettering layer in Si and increases the empty volume fraction as well as the internal surface area per unit volume. The gettering efficiency for oxygen is significantly enhanced compared to the single helium implantation, and the helium implantation dose can be strongly reduced. The gas-filled bubble layer induced by the coimplantation of hydrogen and helium has the highest gettering efficiency for the oxygen accumulation. Direct evidence for oxygen gettering at the internal wall of the cavity is demonstrated by cross-sectional transmission electron microscopy.

  13. Rate limiting mechanism of transition metal gettering in multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Thompson, A.C.; Imaizumi, M.; Hieslmair, H.; Weberr, E.R.

    1997-07-01

    The authors have performed studies on multicrystalline silicon used for solar cells in the as-grown state and after a series of processing and gettering steps. The principal goal of this work is to determine the rate limiting step for metal impurity gettering from multicrystalline silicon with an emphasis on the release of impurities from structural defects. Synchrotron-based x-ray fluorescence mapping was used to monitor the release process. Copper and nickel impurities were found to reside primarily at dislocations in the as-grown state of the material. Short annealing treatments rapidly dissolved the impurity agglomerates. Based on these results and modeling of the dissolution process, copper and nickel is in the form of small agglomerates (< 10 nm) clustered together over micron-scale regions in the as-grown material. Aluminum gettering further disintegrated the agglomerates to below the sensitivity of the system, 2--5 nm in radii. No significant barrier to release of copper or nickel from dislocations was observed.

  14. Fluorine gettering by activated charcoal in a radiation environment

    SciTech Connect

    Felker, L.K.; Toth, L.M.

    1988-10-01

    Activated charcoal has been shown to be an effective gettering agent for the fluorine gas that is liberated in a radiation environment. Even though activated charcoal is a commonly used getter, little is known about the radiation stability of the fluorine-charcoal product. This work has shown that not only is the product stable in high gamma radiation fields, but also that radiation enhances the capacity of the charcoal for the fluorine. The most useful application of this work is with the Molten Salt Reactor Experiment (MSRE) fuel salt because the radioactive components (fission products and actinides) cause radiolytic damage to the solid LiF-BeF/sub 2/-ZrF/sub 4/-UF/sub 4/ (64.5, 30.3, 5.0, 0.13 mol %, respectively) resulting in the liberation of fluorine gas. This work has also demonstrated that the maximum damage to the fuel salt by approx.3 /times/ 10/sup 7/ R/h gamma radiation is approximately 2%, at which point the rate of recombination of fluorine with active metal sites within the salt lattice equals the rate of fluorine generation. The enhanced reactivity of the activated charcoal and radiation stability of the product ensures that the gettered fluorine will stay sequestered in the charcoal.

  15. Nuclear breeder reactor fuel element with axial tandem stacking and getter

    DOEpatents

    Gibby, Ronald L.; Lawrence, Leo A.; Woodley, Robert E.; Wilson, Charles N.; Weber, Edward T.; Johnson, Carl E.

    1981-01-01

    A breeder reactor fuel element having a tandem arrangement of fissile and fertile fuel with a getter for fission product cesium disposed between the fissile and fertile sections. The getter is effective at reactor operating temperatures to isolate the cesium generated by the fissile material from reacting with the fertile fuel section.

  16. A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

    NASA Astrophysics Data System (ADS)

    Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K.

    1992-07-01

    We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

  17. Material problems arising from impurity gettering of lithium by zirconium or titanium

    NASA Astrophysics Data System (ADS)

    Ulrich Borgstedt, Hans

    Hot trapping for purification of lithium is necessary to improve the compatibility of vanadium alloys with the blanket fluid. In hot traps operated at 973 K using titanium or zirconium as getter materials mass transfer between the structural materials, 18Cr-9Ni stainless steels, and the getter materials occurs. Mainly nickel and manganese migrate from the stainless steel housing to the getter foils. The leaching of nickel and manganese causes accelerated corrosion of the structural material. The deposition of nickel on the getter surfaces leads to the formation of crystalline surface layers or diffusion of this element into the foils forming alloys with titanium or zirconium. This second phenomenon may influence the efficiency of the gettering reactions.

  18. Model for dislocation locking by oxygen gettering in silicon crystals

    NASA Astrophysics Data System (ADS)

    Maroudas, Dimitris; Brown, Robert A.

    1991-04-01

    Oxygen gettering to dislocations slows and stops dislocation motion caused by applied stress in silicon crystals. A model is presented that quantitatively describes the inhibition of dislocation motion by accounting for the drag caused by the oxygen atmosphere in the crystal around the dislocation and for oxygen aggregates inside the dislocation core. The oxygen distribution is computed by analysis of diffusion and stress-assisted migration in the crystalline lattice. The predictions of the model agree quantitatively with the experimental data of Imai and Sumino. Hysteresis is predicted in the dependence of the dislocation velocity on applied stress and explains the difference in the unlocking and locking stresses for dislocation motion.

  19. Nuclear reactor fuel element with vanadium getter on cladding

    DOEpatents

    Johnson, Carl E.; Carroll, Kenneth G.

    1977-01-01

    A nuclear reactor fuel element is described which has an outer cladding, a central core of fissionable or mixed fissionable and fertile fuel material and a layer of vanadium as an oxygen getter on the inner surface of the cladding. The vanadium reacts with oxygen released by the fissionable material during irradiation of the core to prevent the oxygen from reacting with and corroding the cladding. Also described is a method for coating the inner surface of small diameter tubes of cladding with a layer of vanadium.

  20. Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications

    NASA Astrophysics Data System (ADS)

    Pitera, Arthur J.; Fitzgerald, E. A.

    2005-05-01

    We show that tensilely strained epitaxial layers getter interstitially dissolved hydrogen and accelerate the nucleation of platelets. Both of these result in subsurface crack propagation leading to surface blistering and eventual exfoliation of a H+-implanted semiconductor surface. In this work, a strained Si0.4Ge0.6 layer was used to enhance the exfoliation kinetics of relaxed Ge/Si1-xGex/Si virtual substrates by gettering hydrogen and providing a preferential nucleation site for platelets. Using platelet morphology and strain relaxation data, a nucleation and growth model was formulated accounting for both chemical and strain energy contributions to the free energy of platelet formation, revealing two kinetically limited growth regimes for platelets in tensilely strained Si0.4Ge0.6 films. Low-temperature (<200°C) annealing nucleates 1011-cm-2 platelets which grow in the strain-limited regime with minimal loss of hydrogen to surface effusion. At 250 °C, platelet growth is diffusion limited, requiring transport of H2 molecules to the strained layer. Subsequent annealing of strained Si0.4Ge0.6/Ge gettering structures at a temperature exceeding 300 °C results in significantly improved surface blistering kinetics over samples which do not contain a gettering layer. Incorporation of tensilely strained layers has the potential of reducing the implantation dose and annealing temperature necessary for layer transfer. Combined with virtual substrate bonding, they provide a promising solution for economical integration of high-performance semiconductors with silicon.

  1. Engineering Report on the Fission Gas Getter Concept

    SciTech Connect

    Ecker, Lynne; Ghose, Sanjit; Gill, Simerjeet; Thallapally, Praveen K.; Strachan, Denis M.

    2012-11-01

    In 2010, the Department of Energy (DOE) requested that a Brookhaven National Laboratory (BNL)-led team research the possibility of using a getter material to reduce the pressure in the plenum region of a light water reactor fuel rod. During the first two years of the project, several candidate materials were identified and tested using a variety of experimental techniques, most with xenon as a simulant for fission products. Earlier promising results for candidate getter materials were found to be incorrect, caused by poor experimental techniques. In May 2012, it had become clear that none of the initial materials had demonstrated the ability to adsorb xenon in the quantities and under the conditions needed. Moreover, the proposed corrective action plan could not meet the schedule needed by the project manager. BNL initiated an internal project review which examined three questions: 1. Which materials, based on accepted materials models, might be capable of absorbing xenon? 2. Which experimental techniques are capable of not only detecting if xenon has been absorbed but also determine by what mechanism and the resulting molecular structure? 3. Are the results from the previous techniques useable now and in the future? As part of the second question, the project review team evaluated the previous experimental technique to determine why incorrect results were reported in early 2012. This engineering report is a summary of the current status of the project review, description of newly recommended experiments and results from feasibility studies at the National Synchrotron Light Source (NSLS).

  2. Self assembled molecular monolayers on high surface area materials as molecular getters

    DOEpatents

    King, D.E.; Herdt, G.C.; Czanderna, A.W.

    1997-01-07

    The present invention relates to a gettering material that may be used as a filtration medium to remove pollutants from the environment. The gettering material comprises a high surface area material having a metal surface that chemically bonds n-alkanethiols in an organized manner thereby forming a molecular monolayer over the metal surface. The n-alkanethiols have a free functional group that interacts with the environment thereby binding specific pollutants that may be present. The gettering material may be exposed to streams of air in heating, ventilation, and air conditioning systems or streams of water to remove specific pollutants from either medium. 9 figs.

  3. Self assembled molecular monolayers on high surface area materials as molecular getters

    DOEpatents

    King, David E.; Herdt, Gregory C.; Czanderna, Alvin W.

    1997-01-01

    The present invention relates to a gettering material that may be used as a filtration medium to remove pollutants from the environment. The gettering material comprises a high surface area material having a metal surface that chemically bonds n-alkanethiols in an organized manner thereby forming a molecular monolayer over the metal surface. The n-alkanethiols have a free functional group that interacts with the environment thereby binding specific pollutants that may be present. The gettering material may be exposed to streams of air in heating, ventilation, and air conditioning systems or streams of water to remove specific pollutants from either medium.

  4. Analytic study of developing flows in a tube laden with non-evaporating and evaporating drops via a modified linearization of the two-phase momentum equations

    NASA Astrophysics Data System (ADS)

    Khosid, S.; Tambour, Y.

    A novel modification of the classical Langhaar linearization of the mutually coupled momentum equations for developing two-phase flows in circular ducts is presented. This modification enables us to treat: (i) flows developing from spatially periodic initial velocity distributions without the presence of droplets, and (ii) two-phase flows in which monosize, non-evaporating and evaporating droplets suspended in a developing gas flow of an initially uniform velocity distribution exchange momentum with the host-gas flow. New solutions are presented for the downstream evolution in the velocity profiles which develop from spatially periodic initial velocity distributions that eventually reach the fully developed Poiseuille velocity profile. These solutions are validated by employing known numerical procedures, providing strong support for the physical underpinnings of the present modified linearization. New solutions are also presented for the evolution in drop velocities and vapour spatial distributions for evaporating droplets suspended in an initially uniform velocity profile of the host gas. Asymptotic solutions are presented for the flow region which lies very close to the inlet of the tube, where the relative velocity between the droplets and the host gas is high, and thus the velocity fields of the two phases are mutually coupled. These solutions provide new explicit formulae for the droplet velocity field as a function of the initial conditions and droplet diameter (relative to the tube diameter) for non-evaporating drops, and also as a function of evaporation rate for evaporating drops.

  5. Assessing hafnium on hafnia as an oxygen getter

    SciTech Connect

    O'Hara, Andrew; Demkov, Alexander A.; Bersuker, Gennadi

    2014-05-14

    Hafnium dioxide or hafnia is a wide band gap dielectric used in a range of electronic applications from field effect transistors to resistive memory. In many of these applications, it is important to maintain control over oxygen stoichiometry, which can be realized in practice by using a metal layer, specifically hafnium, to getter oxygen from the adjacent dielectric. In this paper, we employ density functional theory to study the thermodynamic stability of an interface between (100)-oriented monoclinic hafnia and hafnium metal. The nudged elastic band method is used to calculate the energy barrier for migration of oxygen from the oxide to the metal. Our investigation shows that the presence of hafnium lowers the formation energy of oxygen vacancies in hafnia, but more importantly the oxidation of hafnium through the migration of oxygen from hafnia is favored energetically.

  6. 1,4-diphenylbutadiyne as a potential tritium getter

    SciTech Connect

    Miller, H.H.; Bissell, E.E.; Tsugawa, R.T.; Souers, P.C.

    1980-10-01

    Research on the acetylene compound 1,4-diphenylbutadiyne is an effort to develop an air-operative tritium gas scavenger. T/sub 2/ adds to the acetylene bond of the organic in the presence of a metal catalyst. The catalyst also stimulates the oxidation reaction as well. The butadiyne compound has shown good reaction efficiency at 300 ppM T/sub 2/ in static dry air. At this concentration 75% of the scavenged tritium was in the organic. This work has expanded to the investigation of liquid acetylenes, metal acetylene complexes, organometallics and acetylene based alcohols. The best of these compounds has gettered 100% of 10 to 500 ppM T/sub 2/ for both static and dynamic air flow conditions.

  7. Investigation of intrinsic gettering for germanium doped Czochralski silicon wafer

    NASA Astrophysics Data System (ADS)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Wang, Weiyan; Zeng, Yuheng; Que, Duanlin

    2007-06-01

    The intrinsic gettering (IG) effects in a germanium-doped Czochralski (GCz) silicon wafer have been investigated through a processing simulation of dynamic random access memory making and an evaluation on IG capability for copper contamination. It has been suggested that both the good quality defect-free denuded zones (DZs) and the high-density bulk microdefect (BMD) regions could be generated in GCz silicon wafer during device fabrication. Meanwhile, it was also indicated that the tiny oxygen precipitates were hardly presented in DZs of silicon wafer with the germanium doping. Furthermore, it was found in GCz silicon wafer that the BMDs were higher in density but smaller in size in contrast to that in conventional Cz silicon wafer. Promoted IG capability for metallic contamination was therefore induced in the germanium-doped Cz silicon wafer. A mechanism of the germanium doping on oxygen precipitation in Cz silicon was discussed, which was based on the hypothesis of germanium-related complexes.

  8. Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si

    SciTech Connect

    Chen, Renyu; Trzynadlowski, Bart; Dunham, Scott T.

    2014-02-07

    In this work, we develop models for the gettering of metals in silicon by high phosphorus concentration. We first performed ab initio calculations to determine favorable configurations of complexes involving phosphorus and transition metals (Fe, Cu, Cr, Ni, Ti, Mo, and W). Our ab initio calculations found that the P{sub 4}V cluster, a vacancy surrounded by 4 nearest-neighbor phosphorus atoms, which is the most favorable inactive P species in heavily doped Si, strongly binds metals such as Cu, Cr, Ni, and Fe. Based on the calculated binding energies, we build continuum models to describe the P deactivation and Fe gettering processes with model parameters calibrated against experimental data. In contrast to previous models assuming metal-P{sub 1}V or metal-P{sub 2}V as the gettered species, the binding of metals to P{sub 4}V satisfactorily explains the experimentally observed strong gettering behavior at high phosphorus concentrations.

  9. Studies of Hydrogen Getter Material Self-decomposition and Reaction Capacity

    SciTech Connect

    Saab, A P; Dinh, L N

    2007-03-19

    Diacetylene based hydrogen getters are examined in order to gauge their self decomposition products, as well as to determine possible origins for observed losses in origins getter capacity. Simple long term (several months) thermal aging tests were conducted, with periodic solid solid-phase micro micro-extraction (SPME) sampling followed by GC/MS analysis. The results suggest that bis(diphenylethynyl) benzene tends to decompose to give phenyl contaminants more readily than diphenylbutadiyne. Transmission electron microscopy (TEM) and electron diffraction studies of the palladium catalyst following varying extents of reaction with hydrogen show that there is no change to the catalyst particles, indicating that any change in capacity originates from other causes. These causes are suggested by Sievert's-type experiments on the reaction of the getter with a low pressure (about 10 Torr) hydrogen atmosphere. The reaction data indicate that the getter capacity depends on the pressure of hydrogen to which the material is exposed, and also its thermal history.

  10. Titanium-Based Getter Solution for Wafer-Level MEMS Vacuum Packaging

    NASA Astrophysics Data System (ADS)

    Chidambaram, Vivek; Ling, Xie; Bangtao, Chen

    2013-03-01

    Ultrahigh-vacuum conditions can be achieved by employing porous absorbent materials such as Ti, Zr, Ta, and Yt. Commercial getters are primarily Zr-based, since Zr possesses the best adsorption characteristics. Titanium is not considered as a candidate, since adsorption of gases by Ti is significantly reduced due to oxidation and other contamination. In the present work, it is demonstrated that the adsorption property of Ti can be substantially enhanced and benchmarked against other Zr-based commercial getters by employing a sacrificial layer such as Ni over Ti, and also by using other surface engineering techniques. It has been confirmed that, in addition to the activation temperature, the vacuum level during getter activation also plays a pivotal role in influencing the adsorption characteristics of Ti. It has been determined that the getter life could be significantly improved by the reversible adsorption characteristic of H2 gas, facilitating regeneration cycles.

  11. Modeling of transition metal redistribution to enable wafer design for gettering

    SciTech Connect

    Smith, A.L.; Wada, K.; Kimerling, L.C.

    2000-03-01

    The authors use standard solubility relations and diffusion-limited rate equations to create a model for the gettering of Fe in silicon. The model employs experimentally determined values for diffusivity, ion pairing, binding potentials, and precipitate densities. The model provides a means to evaluate the relative effectiveness of solubility enhancement induced segregation gettering, internal gettering (IG), precipitation, and back-side gettering out diffusion. The materials variables are p-type doping level, density of bulk IG sites, and back-side IG site density. From this work, an understanding of the interactions of the various gettering mechanisms is developed. Contaminant concentration at various positions in the wafer is followed as a function of time and temperature. Negative temperature ramps are modeled to simulate the inevitable cooling step following high-temperature processing. The results indicate that segregation from epitaxial layers to heavily doped substrates brings orders of magnitude improvement in Fe removal over IG alone and that segregation is effective in reducing contamination levels even when initial contamination levels are very low. The best gettering occurs when IG sites work together with segregation. A well-designed wafer has a high density of IG sites to accelerate equilibration during cooling and to enhance mass transport from the segregation interface. Higher p-doping levels in the substrate enhance the segregation coefficient, creating a steeper gradient of [Fe] from the front surface, and slower cooling allows for the greatest amount of equilibration to occur and therefore the most effective Fe gettering. A time-temperature-transformation diagram approach is introduced to provide a comprehensive description of the wafer and process design parameters for effective gettering.

  12. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    DOEpatents

    Sopori, Bhushan

    2014-05-27

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  13. Diffusive Barrier and Getter Under Waste Packages VA Reference Design Feature Evaluations

    SciTech Connect

    MacNeil, K.

    1999-05-24

    This technical document evaluates those aspects of the diffusive barrier and getter features which have the potential for enhancing the performance of the Viability Assessment Reference Design and are also directly related to the key attributes for the repository safety strategy of that design. The effects of advection, hydrodynamic dispersion, and diffusion on the radionuclide migration rates through the diffusive barrier were determined through the application of the one-dimensional, advection/dispersion/diffusion equation. The results showed that because advective flow described by the advection-dispersion equation dominates, the diffusive barrier feature alone would not be effective in retarding migration of radiocuclides. However, if the diffusive barrier were combined with one or more features that reduced the potential for advection, then transport of radionuclides would be dominated by diffusion and their migration from the EBS would be impeded. Apatite was chosen as the getter material used for this report. Two getter configurations were developed, Case 1 and Case 2. As in the evaluation of the diffusive barrier, the effects of advection, hydrodynamic dispersion, and diffusion on the migration of radionuclides through the getter are evaluated. However, in addition to these mechanisms, the one-dimensional advection/dispersion/diffusion model is modified to include the effect of sorption on radionuclide migration rates through the sorptive medium (getter). As a result of sorption, the longitudinal dispersion coefficient, and the average linear velocity are effectively reduced by the retardation factor. The retardation factor is a function of the getter material's dry bulk density, sorption coefficient and moisture content. The results of the evaluation showed that a significant delay in breakthrough through the getter can be achieved if the thickness of the getter barrier is increased.

  14. Efficient Removal of Cationic and Anionic Radioactive Pollutants from Water Using Hydrotalcite-Based Getters.

    PubMed

    Bo, Arixin; Sarina, Sarina; Liu, Hongwei; Zheng, Zhanfeng; Xiao, Qi; Gu, Yuantong; Ayoko, Godwin A; Zhu, Huaiyong

    2016-06-29

    Hydrotalcite (HT)-based materials are usually applied to capture anionic pollutants in aqueous solutions. Generally considered anion exchangers, their ability to capture radioactive cations is rarely exploited. In the present work, we explored the ability of pristine and calcined HT getters to effectively capture radioactive cations (Sr(2+) and Ba(2+)) which can be securely stabilized at the getter surface. It is found that calcined HT outperforms its pristine counterpart in cation removal ability. Meanwhile, a novel anion removal mechanism targeting radioactive I(-) is demonstrated. This approach involves HT surface modification with silver species, namely, Ag2CO3 nanoparticles, which can attach firmly on HT surface by forming coherent interface. This HT-based anion getter can be further used to capture I(-) in aqueous solution. The observed I(-) uptake mechanism is distinctly different from the widely reported ion exchange mechanism of HT and much more efficient. As a result of the high local concentrations of precipitants on the getters, radioactive ions in water can be readily immobilized onto the getter surface by forming precipitates. The secured ionic pollutants can be subsequently removed from water by filtration or sedimentation for safe disposal. Overall, these stable, inexpensive getters are the materials of choice for removal of trace ionic pollutants from bulk radioactive liquids, especially during episodic environmental crisis. PMID:27281583

  15. Performance testing of aged hydrogen getters against criteria for interim safe storage of plutonium bearing materials.

    SciTech Connect

    Shepodd, Timothy J.; Nissen, April; Buffleben, George M.

    2006-01-01

    Hydrogen getters were tested for use in storage of plutonium-bearing materials in accordance with DOE's Criteria for Interim Safe Storage of Plutonium Bearing Materials. The hydrogen getter HITOP was aged for 3 months at 70 C and tested under both recombination and hydrogenation conditions at 20 and 70 C; partially saturated and irradiated aged getter samples were also tested. The recombination reaction was found to be very fast and well above the required rate of 45 std. cc H2h. The gettering reaction, which is planned as the backup reaction in this deployment, is slower and may not meet the requirements alone. Pressure drop measurements and {sup 1}H NMR analyses support these conclusions. Although the experimental conditions do not exactly replicate the deployment conditions, the results of our conservative experiments are clear: the aged getter shows sufficient reactivity to maintain hydrogen concentrations below the flammability limit, between the minimum and maximum deployment temperatures, for three months. The flammability risk is further reduced by the removal of oxygen through the recombination reaction. Neither radiation exposure nor thermal aging sufficiently degrades the getter to be a concern. Future testing to evaluate performance for longer aging periods is in progress.

  16. Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication

    NASA Astrophysics Data System (ADS)

    Terakawa, Takeshi; Wang, Dong; Nakashima, Hiroshi

    2006-04-01

    The gettering behaviors of Fe into Si with and without a p+ layer are investigated by deep-level transient spectroscopy. The samples contaminated with Fe in a wide concentration range were annealed at 600 °C to induce gettering. The surface-layer gettering behaviors of Fe for the sample without the p+ layer strongly depend on the Fe contamination level, in which the surface-layer gettering is not effective for the sample with low-level contamination at a concentration of less than 1 × 1013 cm-3 but effective for the sample with middle-level contamination at a concentration of (1--5) × 1013 cm-3. In contrast, the samples with the p+ layer show effective gettering for low- and middle-level contaminations. The gettering mechanisms of Fe in Si without and with the p+ layer are discussed in detail.

  17. Simultaneous P and B diffusion, in-situ surface passivation, impurity filtering and gettering for high-efficiency silicon solar cells

    SciTech Connect

    Krygowski, T.; Rohatgi, A.; Ruby, D.

    1997-11-01

    A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an in-situ passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n{sup +} and p{sup +} profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin ({approximately} 60 {angstrom}) diffusion glass, resulting in low J{sub o} values below 100 fA/cm{sup 2} for transparent ({approximately} 100 {Omega}/{open_square}) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step.

  18. Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

    PubMed Central

    2012-01-01

    The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the phosphorus-rich PS layer, the electrical properties of the mc-Si wafers were significantly improved. The PS layers, realized on both sides of the mc-Si substrates, were formed by the stain-etching technique. The phosphorus treatment was achieved using a liquid POCl3-based source on both sides of the mc-Si wafers. The realized phosphorus/PS/Si/PS/phosphorus structures were annealed at a temperature ranging between 700°C and 950°C under a controlled O2 atmosphere, which allows phosphorus to diffuse throughout the PS layers and to getter eventual metal impurities towards the phosphorus-doped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current–voltage (I-V) characteristics. The minority carrier lifetime measurements were made using a WTC-120 photoconductance lifetime tester. The serial resistance and the shunt resistance carried out from the dark I-V curves confirm this gettering-related solar cell improvement. It has been shown that the photovoltaic parameters of the gettered silicon solar cells were improved with regard to the ungettered one, which proves the beneficial effect of this gettering process on the conversion efficiency of the multicrystalline silicon solar cells. PMID:22846070

  19. Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

    NASA Astrophysics Data System (ADS)

    Lotfi, Derbali; Hatem, Ezzaouia

    2012-07-01

    The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the phosphorus-rich PS layer, the electrical properties of the mc-Si wafers were significantly improved. The PS layers, realized on both sides of the mc-Si substrates, were formed by the stain-etching technique. The phosphorus treatment was achieved using a liquid POCl3-based source on both sides of the mc-Si wafers. The realized phosphorus/PS/Si/PS/phosphorus structures were annealed at a temperature ranging between 700°C and 950°C under a controlled O2 atmosphere, which allows phosphorus to diffuse throughout the PS layers and to getter eventual metal impurities towards the phosphorus-doped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current-voltage ( I- V) characteristics. The minority carrier lifetime measurements were made using a WTC-120 photoconductance lifetime tester. The serial resistance and the shunt resistance carried out from the dark I- V curves confirm this gettering-related solar cell improvement. It has been shown that the photovoltaic parameters of the gettered silicon solar cells were improved with regard to the ungettered one, which proves the beneficial effect of this gettering process on the conversion efficiency of the multicrystalline silicon solar cells.

  20. Nitrogen Impurity Gettering in Oxide Dispersion Ductilized Chromium

    SciTech Connect

    Brady, Michael P; Anderson, Ian M; Weaver, Mark; Meyer III, Harry M; Walker, Larry R; Miller, Michael K; Larson, David James; Wright, Ian G; Sikka, Vinod K; Rar, Andrei; Pharr, George Mathews; Keiser, James R; Walls, Claudia Alexandra

    2003-01-01

    Work by Scruggs in the 1960s demonstrated that tensile ductility could be achieved at room temperature in powder metallurgically-produced Cr alloyed with MgO. During consolidation, much of the MgO converted to the MgCr{sub 2}O{sub 4} spinel phase, which was hypothesized to getter nitrogen from the Cr, rendering it ductile. We have duplicated this effect, achieving room temperature tensile elongations of 4% for hot-pressed Cr-6MgO-(0-1)Ti (wt.%) and 10% for hot-pressed and extruded Cr-6MgO-0.75Ti. Direct incorporation of nitrogen into the MgCr{sub 2}O{sub 4} phase was not detected; however, impurities, particularly nitrogen and sulfur, were observed to segregate to and/or precipitate at interfaces between the MgO/MgCr{sub 2}O{sub 4} phases and the Cr matrix. Exploratory studies of other non-spinel forming oxide dispersions (La{sub 2}O{sub 3}, TiO{sub 2} and Y{sub 2}O{sub 3}) showed a similar pattern of impurity segregation/precipitation, suggesting that there is nothing unique about spinel dispersions in Cr with regards to impurities. However, none of these other dispersions resulted in similar levels of tensile elongation.

  1. Savannah River Site/K Area Complex getter life extension report.

    SciTech Connect

    Shepodd, Timothy J.; Woodsmall, Todd; Nissen, April

    2008-08-01

    The K Area Complex (KAC) at the Savannah River Site (SRS) has been utilizing HiTop hydrogen getter material in 9975 Shipping Containers to prevent the development of flammable environments during storage of moisture-containing plutonium oxides. Previous testing and subsequent reports have been performed and produced by Sandia National Laboratories (SNL) to demonstrate the suitability and longevity of the getter during storage at bounding thermal conditions. To date, results have shown that after 18 months of continuous storage at 70 C, the getter is able to both recombine gaseous hydrogen and oxygen into water when oxygen is available, and irreversibly getter (i.e. scavenge) hydrogen from the vapor space when oxygen is not available, both under a CO{sub 2} environment. [Refs. 1-5] Both of these reactions are catalytically enhanced and thermodynamically favorable. The purpose of this paper is to establish the justification that maintaining the current efforts of biannual testing is no longer necessary due to the robust performance of the getter material, the very unlikely potential that the recombination reaction will fail during storage conditions in KAC, and the insignificant aging effects that have been seen in the testing to date.

  2. Gettering of copper to hydrogen-induced cavities in multicrystalline silicon

    SciTech Connect

    Kinomura, A.; Horino, Y.; Nakano, Y.; Williams, J.S.

    2005-09-15

    The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5)x10{sup 13} cm{sup -2}, below the level that would provide a complete monolayer coverage of the internal surfaces of the cavities. Samples were first implanted with hydrogen and then annealed at 750 or 850 deg. C for 1 h to form cavities and induce subsequent gettering. Neutron activation analysis with chemical etching of the samples indicated that more than 90% of Cu atoms could be removed from the entire wafer by cavity gettering for both of the annealing temperatures.

  3. Getter sputtering system for high-throughput fabrication of composition spreads.

    PubMed

    Gregoire, John M; van Dover, R B; Jin, Jing; Disalvo, Francis J; Abruña, Héctor D

    2007-07-01

    We describe a sputtering system that can deposit composition spreads in an effectively UHV environment but which does not require the high-throughput paradigm to be compromised by a long pump down each time a target is changed. The system deploys four magnetron sputter guns in a cryoshroud (getter sputtering) which allows elements such as Ti and Zr to be deposited with minimal contamination by oxygen or other reactive background gases. The system also relies on custom substrate heaters to give rapid heating and cool down. The effectiveness of the gettering technique is evaluated, and example results obtained for catalytic activity of a pseudoternary composition spread are presented. PMID:17672743

  4. Oxidation mechanism of porous Zr₂Fe used as a hydrogen getter.

    PubMed

    Cohen, Dror; Nahmani, Moshe; Rafailov, Genadi; Attia, Smadar; Shamish, Zorik; Landau, Miron; Merchuk, Jose; Zeiri, Yehuda

    2016-01-01

    We determined the oxidation mechanism of porous ST-198, which mainly comprises Zr2Fe. Oxidation kinetics depended on temperature, oxygen partial pressure, and oxidation extent. The passivation role of oxidation in hydrogen scavenging is probably due to the development of a surface oxide, independent of oxygen concentration. Zr2Fe would be a superior hydrogen getter in oxygen-contaminated environments at high temperatures, as most oxygen will be consumed at the outer shell by mass transfer limitations, protecting the bulk of the getter for hydrogen scavenging. PMID:26408914

  5. Studies on impurity control and hydrogen pumping with chromium gettering in ISX-B

    SciTech Connect

    Mioduszewski, P.; Simpkins, J.E.; Edmonds, P.H.; Isler, R.C.; Lazarus, E.A.; Ma, C.H.; Murakami, M.; Wootton, A.J.

    1984-01-01

    Chromium gettering has been proven to be a trouble-free and efficient method of surface pumping in tokamaks. The impurity control capabilities are excellent and comparable to that of titanium. The hydrogen uptake is reduced to monolayer quantities on the surface. The expansion of the operating space is similar to that seen with titanium without the disadvantage of strongly increased hydrogen fluxes. Possible applications of chromium gettering are: impurity control in contemporary tokamaks; surface pumping in short pulse DT-burning devices to minimize tritium inventory, and wall conditioning of future large machines prior to operation.

  6. Deposition and Characterization of Improved Hydrogen Getter Materials - Report on FY 14-15 Activities

    SciTech Connect

    Hubbard, Kevin Mark; Sandoval, Cynthia Wathen

    2015-10-15

    The goals of this work have been two-fold. First, to perform an initial, quantitative, optimization of getter performance, with the primary variables being DEB/Pd ratio and UV power. Second, to simplify the deposition process to make it more compatible with the DOE production environment.

  7. The Transmission Factor Method: in-situ Characterization of Getter Coated Pipes

    SciTech Connect

    Bonucci, Antonio; Conte, Andrea; Manini, Paolo; Raimondi, Stefano

    2007-01-19

    Particle accelerators and synchrotron light source need low residual pressure during operating conditions. In specific applications like narrow-gap insertion devices, NEG coating has proved to be very effective. ASTM F798-82 standard is the common characterization method for the sorption performance of getters. In the case of getter coated pipes, the measurement is conducted 'offline' on a sample (coupon), suitably positioned inside the chamber to be coated and removed after the process. Although this approach is suitable to guarantee the control of the process, in-situ characterization should be useful to evaluate residual pressure during the operating conditions. A different measurement technique (Transmission Factor Method) is here described. It is based on the measurement of pressures ratio at the inlet and the outlet of a coated pipe, under a flow of test gas. A calibration curve is calculated using a modellistic approach and permits to evaluate sticking probability of the coated surface from the pressure ratio. Preliminary experimental results about the characterization of this getter will be shown. Keywords: Getter sorption measurement.

  8. A new polymer-based hydrogen getter. [Styrene-butadiene triblock copolymer

    SciTech Connect

    Gilliom, L.R.

    1987-01-01

    Styrene-butadiene triblock copolymer PS-PB-PS was hydrogenated in the bulk using the Crabtree catalyst (Ir(COD)(py)(tcyp))PF/sub 6/ (COD = 1,5-cyclooctadiene, py = pyridene, tcyp = tricyclohexylphosphine). Since this polymer/catalyst mixture reacts rapidly with hydrogen at ambient temperature and low hydrogen pressures, it should act as an effective hydrogen getter. 7 refs., 2 figs.

  9. The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Thompson, A.C.; Imaizumi, M.

    1997-04-01

    Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to determine the mechanism by which gettering is ineffectual on these high recombination regions. The authors have performed studies on integrated circuit (IC) quality single crystal and multicrystalline solar cell silicon (mc-silicon) in the as-grown state and after a variety of processing/gettering steps. With Surface Photovoltage measurements of the minority carrier diffusion length which is inversely proportional to carrier recombination, they have seen that aluminum gettering is effective for improving IC quality material but ineffective for improving the regions of initially low diffusion lengths (high recombination rates) in mc-silicon. Of particular interest is the great increase in diffusion length for IC material as compared to the mc-silicon. Clearly the IC material has benefited to a greater extent from the gettering procedure than the mc-silicon.

  10. Selection and Testing of "Getters" for Adsorption of Iodine-129 and Technetium-99: A Review

    SciTech Connect

    Mattigod, Shas V.; Serne, R. Jeffrey; Fryxell, Glen E.

    2003-09-24

    During the last several decades considerable research effort has been expended to identify suitable "getter" materials that can immobilize or delay the transport of anionic radionuclides (such as 129I and 99TcO4) that would be released from physically and chemically degrading waste packages. Several investigators have identified a number of important performance characteristics such as adsorption potential and chemical/physical stability that getter materials should possess for effective deployment in repository environments. A review of published literature indicated that various minerals and synthetic adsorbent materials such as, oxides, hydroxides, natural and modified aluminosilicates, sulfides, carbonates, phosphates, carbon, and functionalized novel sorbents have been tested for their getter properties. Oxide/hydroxide solids and many silicate minerals have poor capacity and selectivity for iodide (Kd : 0 – 10 ml/g) and release iodide with increasing pH. A few silicate minerals such as illite exhibit better selectivity for iodide (Kd : ~30 ml/g). Significantly improved iodide selectivity (Kd : 5,000 ml/g) has been observed with organically-modified silicate minerals such as montmorillonite and vermiculite. Sulfide minerals such as cinnabar and argentite typically adsorb iodide with very high selectivity (Kd : 3,000 – 80,000 ml/g). Synthetic materials such as calcium monosulfate aluminate and hydrotalcite show moderate iodide selectivity (Kd: ~25 – 300 ml/g). A new class of specially-designed synthetic getters when tested in groundwater and simulated waste package leachate adsorbed iodide with very high specificity (Kd: 100,000 – 1,000,000 ml/g). The long-term stability of these mineral and synthetic getters in post-closure environment needs further evaluation. Under oxic conditions and in groundwater or background salt solution, many of the oxide/ hydroxide solids and silicate minerals exhibit relatively poor capacity and selectivity (Kd: <5 ml/g) for

  11. Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

    NASA Technical Reports Server (NTRS)

    Ko, K. Y.; Lagowski, J.; Gatos, H. C.

    1989-01-01

    Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

  12. WORKSHOP ON DEVELOPMENT OF RADIONUCLIDE GETTERS FOR THE YUCCA MOUNTAIN WASTE REPOSITORY

    SciTech Connect

    K.C. Holt

    2006-03-13

    One of the important that the U.S. Department of Energy (DOE) is currently undertaking is the development of a high-level nuclear waste repository to be located at Yucca Mountain, Nevada. Concern is generated by the Yucca Mountain Project (YMP) is due to potential releases as groundwater contamination, as described in the Total System Performance Assessment (TSPA). The dose to an off-site individual using this groundwater for drinking and irrigation is dominated by four radionuclides: Tc-99, I-127, Np-237, and U-238. Ideally, this dose would be limited to a single radionuclide, U-238; in other words, YMP would resemble a uranium ore body, a common geologic feature in the Western U.S. For this reason and because of uncertainties in the behavior of Tc-99, I-127, and Np-237, it would be helpful to limit the amount of Tc, I, and Np leaving the repository, which would greatly increase the confidence in the long-term performance of YMP. An approach to limiting the migration of Tc, I, and Np that is complementary to the existing YMP repository design plans is to employ sequestering agents or ''getters'' for these radionuclides such that their migration is greatly hindered, thus decreasing the amount of radionuclide leaving the repository. Development of such getters presents a number of significant challenges. The getter must have a high affinity and high selectivity for the radionuclide in question since there is approximately a 20- to 50-fold excess of other fission products and a 1000-fold excess of uranium in addition to the ions present in the groundwater. An even greater challenge is that the getters must function over a period greater than the half-life of the radionuclide (greater than 5 half-lives would be ideal). Typically, materials with a high affinity for Tc, I, or Np are not sufficiently durable. For example, strong-base ion exchange resins have a very high affinity for TcO{sub 4}{sup -} but are not expected to be durable. On the other hand, durable

  13. QED-1 device and measurements of gettering efficiency for a simulated divertor plasma

    SciTech Connect

    Owens, D.K.; Yamada, M.

    1980-03-01

    The QED-1 device at PPL has provided gettering efficiency data for neutralized hydrogen plasma on titanium. The hollow-anode arcjet produces a plasma column 1 cm in diameter with 10/sup 12/ < n/sub e/ < 10/sup 15/ cm/sup -3/ and T/sub i/ approx.< T/sub e/ = 3-10 eV, confined by an axial magnetic field of 1-6 kG. The gettering measurements are based on monitoring neutral gas density with respect to time in the divertor simulation chamber of QED-1. The present results indicate that the plasma particles lose their charge and most of their energy when they strike the neutralizer plate.

  14. USING POLYMERIC HYDROGEN GETTERS TO PREVENT COMBUSTIBLE ATMOSPHERES DURING INTERIM SAFE STORAGE OF PLUTONIUM OXIDE

    SciTech Connect

    Woodsmall, T

    2007-05-24

    Nuclear Materials Management (NMM) of WSRC has recently installed the capability to perform both non-destructive and destructive examination of 3013 containers of Pu oxide in accordance with DOE-STD-3013. The containers will be opened and the oxide will be sampled for analysis. The remaining bulk oxide must then be safely stored in a non-3013-compliant configuration. Available processing equipment and controls cannot prevent the oxide from adsorbing moisture during this process. Subsequent radiolysis of moisture during storage may generate combustible quantities of gases while waiting final processing, and satisfying DOE Interim Safe Storage Criteria (ISSC) would require that storage containers be vented at impractical frequencies. With support from an independent National Laboratory, WSRC/NMM has demonstrated that a commercial hydrogen getter material will effectively prevent the accumulation of combustible gas concentrations. A project overview, including storage requirements and strategies, as well as getter technology, current test results, and anticipated future developments will be addressed.

  15. The effect of gettering on areal inhomogeneities in large-area multicrystalline-silicon solar cells

    SciTech Connect

    Gee, J.M.; Sopori, B.L.

    1997-10-01

    Multicrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of the good and bad regions by the front junction. The authors have examined the effect of gettering on areal inhomogeneities in large-area mc-Si cells. Cells with large areal inhomogeneities were found to have increased non-ideal recombination current, which is in line with theoretical predictions. Phosphorus-diffusion and aluminum-alloy gettering of mc-Si was found to reduce the areal inhomogeneities and improve large-area mc-Si device performance.

  16. Gettering layer for oxygen accumulation in the initial stage of SIMOX processing

    NASA Astrophysics Data System (ADS)

    Ou, Xin; Kögler, Reinhard; Skorupa, Wolfgang; Möller, Wolfhard; Wang, Xi; Gerlach, Jürgen W.

    2009-05-01

    A cavity layer or nano-bubble layer introduced by He implantation before the oxygen implantation collects the implanted oxygen and increases the oxygen concentration. The average size and density of the oxygen precipitates formed in the initial stage of the separation-by-implanted-oxygen (SIMOX) process is conform with the size and density of the cavities pre-formed by He implantation and annealing. The gettering ability of the cavity layer for oxygen is directly related to the area of the internal surface of the cavities. A nano-bubble layer accumulates oxygen in a very narrow range occurring between the damage maximum, DP, and the mean projected ion range, RP. Such a nano-bubble layer is most efficient in oxygen gettering due to their larger area of the internal surface and the small size of the oxide precipitates initially formed at the bubbles.

  17. Method for absorbing hydrogen using an oxidation resisant organic hydrogen getter

    DOEpatents

    Shepodd, Timothy J.; Buffleben, George M.

    2009-02-03

    A composition for removing hydrogen from an atmosphere, comprising a mixture of a polyphenyl ether and a hydrogenation catalyst, preferably a precious metal catalyst, and most preferably platinum, is disclosed. This composition is stable in the presence of oxygen, will not polymerize or degrade upon exposure to temperatures in excess of 200.degree. C., or prolonged exposure to temperatures in the range of 100-300.degree. C. Moreover, these novel hydrogen getter materials can be used to efficiently remove hydrogen from mixtures of hydrogen/inert gas (e.g., He, Ar, N.sub.2), hydrogen/ammonia atmospheres, such as may be encountered in heat exchangers, and hydrogen/carbon dioxide atmospheres. Water vapor and common atmospheric gases have no adverse effect on the ability of these getter materials to absorb hydrogen.

  18. Method for gettering organic, inorganic and elemental iodine in aqueous solutions

    DOEpatents

    Beahm, Edward C.; Shockley, William E.

    1990-07-03

    A process for the removal of iodine from aqueous solutions, particularly the trapping of radioactive iodine to mitigate damage resulting from accidents or spills associated with nuclear reactors, by exposing the solution to well dispersed silver carbonate which reacts with the iodine and iodides, thereby gettering iodine and iodine compounds from solution. The iodine is not only removed from solution but also from the contiguous vapor.

  19. Method for gettering organic, inorganic and elemental iodine in aqueous solutions

    DOEpatents

    Beahm, Edward C.; Shockley, William E.

    1990-01-01

    A process for the removal of iodine from aqueous solutions, particularly the trapping of radioactive iodine to mitigate damage resulting from accidents or spills associated with nuclear reactors, by exposing the solution to well dispersed silver carbonate which reacts with the iodine and iodides, thereby gettering iodine and iodine compounds from solution. The iodine is not only removed from solution but also from the contiguous vapor.

  20. Assessment of Zr-Fe-V getter alloy for gas-gap heat switches

    NASA Technical Reports Server (NTRS)

    Prina, M.; Kulleck, J. G.; Bowman, R. C., Jr.

    2000-01-01

    A commercial Zr-V-Fe alloy (i.e., SAES Getters trade name alloy St-172) has been assessed as reversible hydrogen storage material for use in actuators of gas gap heat switches. Two prototype actuators containing the SAES St-172 material were built and operated for several thousand cycles to evaluate performance of the metal hydride system under conditions simulating heat switch operation.

  1. Stress analysis of MFTF-B getter system bellows. Final report

    SciTech Connect

    Tokarz, F.J.; Johnson, J.J.; Mukherjee, A.N.; Dalder, E.N.

    1982-04-01

    The MFTF-B design includes a retractable getter system. Eight getter assemblies are planned (4 in each end plug). Electrically heated Ti wires are mounted on a telescoping insertion mechanism and, between machine shots (pulses), are extended into the chamber in the vicinity of inward-facing water-cooled magnet liners. During the shots, the sublimators must be withdrawn because they will intrude into plasma and diagnostic space. Each of the getter assemblies will be mounted on the exterior of the vacuum vessel. Bellows are used to keep essentially all of the mechanism isolated from the vessel vacuum. The bellows come in two sizes (8.25'' O.D. and 14'' O.D.). The smaller of the two bellows has been qualified by testing up to 94,000 cycles by empirically adjusting details of the bellow design (geometry and thickness). The process required 12 different test samples and took over a one-year period to accomplish. The bellows consistently failed in the inside diameter weld heat-affected zone. Results from stress analysis studies are presented.

  2. Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Lennon, C. M.; Jacobs, R. N.; Smith, P. J.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Arias, J. A.; Brill, G.; Chen, Y.; Wijewarnasuriya, P. S.; Vilela, M. F.; Peterson, J.; Johnson, S. M.; Lofgreen, D. D.; Rhiger, D.; Patten, E. A.; Bangs, J.

    2013-11-01

    The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning transmission electron microscopy. Impurities (Li, Na, and K) were shown to getter in as-grown CdTe/Si epilayers at in situ Te-stabilized thermal anneal (~500°C) interfaces. In HgCdTe/CdTe/Si epilayers, indium accumulation was observed at Te-stabilized thermal anneal interfaces. Impurity accumulation was measured at HgCdTe/CdTe and CdTe/ZnTe interfaces. Processing anneals were found to nearly eliminate the gettering effect at the in situ Te-stabilized thermal anneal interfaces. Impurities were found to redistribute to the front HgCdTe/CdTe/Si surface and p- n junction interfaces during annealing steps. We also investigated altering the in situ Te-stabilized thermal anneal process to enhance the gettering effect.

  3. Effect of gamma irradiation on MnO2/Ag2O hydrogen getter

    NASA Astrophysics Data System (ADS)

    Chlique, Christophe; Lambertin, David; Galliez, Kévin; Labed, Véronique; Dannoux-Papin, Adeline; Jobic, Stéphane; Deniard, Philippe; Leoni, Elisa

    2015-03-01

    This study aims to show the stability of γ-MnO2/Ag2O hydrogen getter under gamma irradiation in order to be suitable for decreasing the hydrogen risk during the nuclear waste transportation. The chemical and the structural properties of the getter were barely unchanged for irradiated doses up to 4 MGy. The pair distribution function (PDF) analysis showed that the γ-MnO2, which can be describe as an intergrowth of the ramsdellite phase (R-MnO2) and the pyrolusite phase (β-MnO2), had the same intergrowth rate (around 60% for β-MnO2 and 40% for R-MnO2) after irradiation and the silver containing promoter was also unchanged. The getter remains therefore efficient for hydrogen trapping. Furthermore, γ-MnO2/Ag2O was tested in a closed environment in the presence of hydrogen released by organic technological waste radiolysis, such as polyvinyl chloride, ion exchange resins, polyethylene and silicone. Over 80% of the hydrogen, generated by organic radiolysis, was trapped under a 1.5 MGy gamma irradiation.

  4. Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes

    SciTech Connect

    Malladi, Girish; Huang, Mengbing Murray, Thomas; Novak, Steven; Matsubayashi, Akitomo; LaBella, Vincent; Bakhru, Hassaram

    2014-08-07

    Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H{sup +} (range: ∼850 nm; dose: 1.5 × 10{sup 16 }cm{sup −2}) and Ni{sup +} (range: ∼60 nm; dose: 2 × 10{sup 15 }cm{sup −2}). Following annealing, the H implanted regions populated with Ni nanoparticles of size (∼10–25 nm) and density (∼10{sup 11}/cm{sup 2}) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a high-quality crystalline Si layer exhibit a very high magnetic switching energy barrier of ∼0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment.

  5. USE OF HYDROGEN GETTERS FOR ENSURING SAFE STORAGE OF PLUTONIUM-BEARING MATERIALS AT THE SAVANNAH RIVER SITE

    SciTech Connect

    Woodsmall, T.; Hackney, B.; Traver, L.

    2010-05-20

    Plutonium oxide left over from the 3013 destructive surveillance process is ultimately disposed of as waste. Therefore, this material is not re-stabilized and packaged to meet the requirements of DOE-STD-3013. Instead, it is stored on an interim basis in compliance with the interim safe storage criteria issued by DOE in January 1996. One of the safe storage criteria requires actions to be taken to minimize the formation or accumulation of flammable gases inside the storage container. Personnel responsible for the safe storage of the material have chosen to use a polymer-based, ambient air compatible hydrogen 'getter' to prevent the formation of hydrogen gas inside the storage container and thus prevent the formation of a flammable gas mixture. This paper briefly describes the method in which the getter performs its functions. More importantly, this paper presents the results of the testing that has been performed to characterize the bounding effects of aging and demonstrate the use of the getter for long-term storage. In addition, the favorable results of a post-storage analysis of actual getter material are presented and compared with bounding predictions. To date, bounding test results have shown that after 18 months of continuous storage and 39 months of total storage at 70C, the getter is able to both recombine gaseous hydrogen and oxygen into water when oxygen is available, and irreversibly getter (i.e., scavenge) hydrogen from the vapor space when oxygen is not available, both under a CO{sub 2} environment. Further bounding testing has been deemed unnecessary, and continued post-storage testing will be conducted on a periodic basis. The first post-storage testing of deployed getter material after two years of service revealed that it still performed like new material.

  6. Phosphorous-diffusion gettering in the presence of a nonequilibrium concentration of silicon interstitials: A quantitative model

    SciTech Connect

    Spiecker, E.; Seibt, M.; Schroeter, W.

    1997-04-01

    A quantitative model of phosphorous-diffusion gettering in silicon is presented, which combines the effects of segregation and self-interstitial injection on the distribution of dissolved metallic impurities. The model describes metal diffusion both in the bulk and in the highly phosphorous-doped layer and makes it possible to include phosphorous-diffusion models. By analyzing an approximate solution for the quasi-steady-state metal distribution, we show that for impurities like gold and platinum self-interstitial injection enhances the gettering efficiency compared to pure segregation. We apply the results to phosphorous-diffusion gettering of gold and demonstrate that all relevant features of recently measured gold distributions can be interpreted consistently. For 3d metals, which are predominantly dissolved on interstitial sites in intrinsic silicon, the model allows us to include the formation of precipitates resulting from self-interstitial injection as proposed earlier. {copyright} {ital 1997} {ital The American Physical Society}

  7. EFFECT OF THERMAL PROCESSES ON COPPER-TIN ALLOYS FOR ZINC GETTERING

    SciTech Connect

    Korinko, P.; Golyski, M.

    2013-11-01

    A contamination mitigation plan was initiated to address the discovery of radioactive zinc‐65 in a glovebox. A near term solution was developed, installation of heated filters in the glovebox piping. This solution is effective at retaining the zinc in the currently contaminated area, but the gamma emitting contaminant is still present in a system designed for tritium beta. A project was initiated to develop a solution to contain the {sup 65}Zn in the furnace module. Copper and bronze (a Cu/Sn alloy) were found to be candidate materials to combine with zinc‐65 vapor, using thermodynamic calculations. A series of binary Cu/Sn alloys were developed (after determining that commercial alloys were unacceptable), that were found to be effective traps of zinc vapor. The task described in this report was undertaken to determine if the bronze substrates would retain their zinc gettering capability after being exposed to simulated extraction conditions with oxidizing and reducing gases. Pure copper and three bronze alloys were prepared, exposed to varying oxidation conditions from 250 to 450{degree}C, then exposed to varying reduction conditions in He-H{sub 2} from 250-450{degree}C, and finally exposed to zinc vapor at 350{degree}C for four hours. The samples were characterized using scanning electron microscopy, X-ray diffraction, differential thermal analysis, mass change, and visual observation. It was observed that the as fabricated samples and the reduced samples all retained their zinc gettering capacity while samples in the "as-oxidized" condition exhibited losses in zinc gettering capacity. Over the range of conditions tested, i.e., composition, oxidation temperature, and reduction temperature, no particular sample composition appeared better. Samples reduced at 350{degree}C exhibited the greatest zinc capacity, although there were some testing anomalies associated with these samples. This work clearly demonstrated that the zinc gettering was not adversely

  8. Gas handling systems using titanium-sponge and uranium bulk getters

    SciTech Connect

    Kherani, N.P.; Shmayda, W.T.

    1985-09-01

    A protium gas handling system using titanium and uranium bulk getters was designed, constructed and tested. Numerous process operations were carried out on this system to aid in the design of a tritium gas handling system four times the experimental scale. Experimental results have shown that high percentages of tritium on long-term titanium storage beds can be recovered in a relatively short period of time and be transferred to uranium bed(s) in direct (pump-less) and pump-aided transfers. An optimum storage time after which the rate of interstitial /sup 3/He evolution would be prohibitive to conduct direct tritium transfers is estimated.

  9. Development of a Tritium Cleanup System for a Large Helical Device Using Nonvolatile Getter Materials

    SciTech Connect

    Kawano, Takao; Sakuma, Yoichi; Kabutomori, Toshiki; Shibuya, Mamoru

    2000-01-15

    A tritium cleanup system has been conceptually developed for the large helical device (LHD) at the National Institute for Fusion Science. The system is a processing device employed to remove tritium from exhaust gas. In the exhaust gas discharged from the LHD in normal operation, the major part of tritium constituents should be in a form of hydrogen molecules because the fuel used in plasma experiments with the LHD is hydrogen molecules. From this viewpoint, we have designed a tritium cleanup system, which is characterized by tritium being removed and stored in a form of hydrogen molecules with less impurities, like oxygen and carbon, and its decomposition and the separation processes are introduced to convert various tritiated compounds into a form of hydrogen molecules of high purity. Besides these, there is another aspect in that getter materials are applied in both decomposition of tritiated compounds and storage of hydrogen molecules containing tritium.The system design is composed of three essential component parts: a hydrogen separator, a hydrogen absorbing vessel, and a decomposition process vessel. The hydrogen separator and the decomposition process vessel make a process loop repeat to remove hydrogen into a form of hydrogen molecules with less impurities. It is important that 'less impurities' means having a less bad influence on hydrogen-absorbing materials used in the storage vessel.We think that the hydrogen separator will be manufactured by employing a palladium hydrogen purifier system, which is available in the marketplace, and the hydrogen storage vessel will also be manufactured by using hydrogen-absorbing alloys like titanium. Thus, the serious problem imposed on us is how to realize the decomposition process vessel. To develop the decomposition process vessel, we thought nonvolatile getter materials were promising and carried out performance tests of methane decomposition by the nonvolatile getter materials, where methane was used because it is

  10. Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon

    SciTech Connect

    Myers, S.M.; Petersen, G.A.; Follstaedt, D.M.; Headley, T.J.

    1996-06-01

    We have mechanistically and quantitatively characterized the binding of transition-metal impurities in Si to cavities formed by He implantation and to B-Si precipitates resulting from B implantation. Both sinks are inferred to act by the segregation of metal atoms to pre-existing low-energy sites, namely surface chemisorption sites in the case of cavities and bulk solution sites in the case of the B-Si phase. These gettering processes exhibit large binding energies, and they are predicted to remain active for arbitrarily small initial impurity concentrations as a result of the segregation mechanisms. Both appear promising for gettering in Si devices.

  11. The effects of chromium and titanium gettering on the operation of the Advanced Toroidal Facility

    SciTech Connect

    Isler, R.C.; Bell, G.L.; Bigelow, T.S.; Crume, E.C.; England, A.C.; Glowienka, J.C.; Hiroe, S.; Horton, L.D.; Jernigan, T.C.; Langley, R.A.; Mioduszewski, P.K.; Murakami, M.; Rasmussen, D.A.; Simpkins, J.E.; Wilgen, J.B.; Wing, W.R.

    1990-01-01

    Plasmas in the Advanced Toroidal Facility (ATF), an {ell} = 2 torsatron with 12 field periods, are produced by 200--400 kW of electron cyclotron heating (ECH) and up to 1.5 MW of neutral-beam injection (NBI). The characteristics of the plasmas are sensitive to the type of wall conditioning employed. A progression of techniques, beginning with glow discharge cleaning and baking and evolving to gettering with chromium and titanium, has significantly reduced the low-Z impurity content, lowered the fraction of radiated power, and permitted improved control over the electron density. As a result, plasma parameters and machine performance have been enhanced significantly. The maximum values achieved for storage energy, line-averaged density, and confinement times are 28 kJ, 1.2 {times} 10{sup 20} m{sup {minus}3}, and 25 ms. These parameters are comparable to those obtained in the ISX-B tokamak. In addition, with titanium gettering, quasisteady operation of 200 ms of neutral beam injection has been obtained without the collapses that characterized earlier periods of operation. 4 refs., 4 figs., 1 tab.

  12. Tritium purification via zirconium-manganese-iron alloy getter st 909 in flow processes

    SciTech Connect

    Baker, J.D.; Meikrantz, D.H.; Pawelko, R. J.; Anderl, R.A. |; Tuggle, D.G.

    1995-03-01

    A zirconium-manganese-iron alloy, St 909, was evaluated as a purifier in tritium handling, transport, and storage applications. High efficiency removal of CH{sub 4}, CO, CO{sub 2}, NH{sub 3}, and O{sub 2} was observed at concentrations of 0.1 to 1% in helium. Gas streams at 100 to 5000 sccm were passed through getters operated at 500-800{degree}C. On-getter residence times of two seconds were required to achieve > 99% removal of these reactive impurities. At this removal efficiency level, the individual impurity capacity of 100 g of St 909 purifier at 800{degree}C was 0.59, 0.28, 0.19, 0.14 and 0.12 moles of CH{sub 4}, CO, CO{sub 2}, O{sub 2} and NH{sub 3}, respectively. Hydrogen containing gases, CH{sub 4} and NH{sub 3}, were cracked on the purifier and the resultant elemental hydrogen was released. Only 8{+-}2 scc of H{sub 2} were retained on 100 g of St 909 at 800{degree}C. These features suggest that this alloy can be employed as an efficient purifier for hydrogen isotopes in inert gas, nitrogen, or perhaps even H, D, or T streams. 12 refs., 4 figs., 1 tab.

  13. Purification of liquid metal systems with sodium coolant from oxygen using getters

    NASA Astrophysics Data System (ADS)

    Kozlov, F. A.; Konovalov, M. A.; Sorokin, A. P.

    2016-05-01

    For increasing the safety and economic parameters of nuclear power stations (NPSs) with sodium coolant, it was decided to install all systems contacting radioactive sodium, including purification systems of circuit I, in the reactor vessel. The performance and capacity of cold traps (CTs) (conventional element of coolant purification systems) in these conditions are limited by their volume. It was proposed to use hot traps (HTs) in circuit I for coolant purification from oxygen. It was demonstrated that, at rated parameters of the installation when the temperature of the coolant streamlining the getter (gas absorber) is equal to 550°C, the hot trap can provide the required coolant purity. In shutdown modes at 250-300°C, the performance of the hot trap is reduced by four orders of magnitude. Possible HT operation regimes for shutdown modes and while reaching rated parameters were proposed and analyzed. Basic attention was paid to purification modes at power rise after commissioning and accidental contamination of the coolant when the initial oxygen concentration in it reached 25 mln-1. It was demonstrated that the efficiency of purification systems can be increased using HTs with the getter in the form of a foil or granules. The possibility of implementing the "fast purification" mode in which the coolant is purified simultaneously with passing over from the shutdown mode to the rated parameters was substantiated.

  14. Phosphorus diffusions for gettering-induced improvement of lifetime in various silicon materials

    SciTech Connect

    Gee, J.M.

    1991-01-01

    Solar-grade silicon frequently contains large quantities of defects and impurities that can significantly degrade the excess-carrier lifetime through introduction of recombination sites. The impurities frequently include metals as well as high concentrations of high carbon and/or oxygen. Defects and impurities can also degrade the electrical properties of solar cells fabricated in solar-grade silicon by causing shunt currents or excess junction current. Fabrication of acceptable solar cells from such materials requires processes that are tolerant of, or that can even improve impure and defective material. Phosphorus diffusion is a well-known technique for gettering of impurities in silicon. The effect of phosphorus diffusion on the excess-carrier lifetime in various silicon materials was investigated. The optimum phosphorus diffusion schedule and enhancement of lifetime was found to be material specific, with substantial (5-fold) increases found for some materials. Possible reasons for the variability of phosphorus gettering with different materials is discussed. 11 refs., 6 figs., 3 tabs.

  15. Synchrotron-based investigation of transition-metal getterability in n-type multicrystalline silicon

    NASA Astrophysics Data System (ADS)

    Morishige, Ashley E.; Jensen, Mallory A.; Hofstetter, Jasmin; Yen, Patricia X. T.; Wang, Chenlei; Lai, Barry; Fenning, David P.; Buonassisi, Tonio

    2016-05-01

    Solar cells based on n-type multicrystalline silicon (mc-Si) wafers are a promising path to reduce the cost per kWh of photovoltaics; however, the full potential of the material and how to optimally process it are still unknown. Process optimization requires knowledge of the response of the metal-silicide precipitate distribution to processing, which has yet to be directly measured and quantified. To supply this missing piece, we use synchrotron-based micro-X-ray fluorescence (μ-XRF) to quantitatively map >250 metal-rich particles in n-type mc-Si wafers before and after phosphorus diffusion gettering (PDG). We find that 820 °C PDG is sufficient to remove precipitates of fast-diffusing impurities and that 920 °C PDG can eliminate precipitated Fe to below the detection limit of μ-XRF. Thus, the evolution of precipitated metal impurities during PDG is observed to be similar for n- and p-type mc-Si, an observation consistent with calculations of the driving forces for precipitate dissolution and segregation gettering. Measurements show that minority-carrier lifetime increases with increasing precipitate dissolution from 820 °C to 880 °C PDG, and that the lifetime after PDG at 920 °C is between the lifetimes achieved after 820 °C and 880 °C PDG.

  16. Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

    SciTech Connect

    Ohno, Yutaka Inoue, Kaihei; Fujiwara, Kozo; Deura, Momoko; Kutsukake, Kentaro; Yonenaga, Ichiro; Shimizu, Yasuo; Inoue, Koji; Ebisawa, Naoki; Nagai, Yasuyoshi

    2015-06-22

    Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

  17. Characterization Of The Hydrogenation Products Of Bix (phenylethynyl) Benzene (DEB) Getter Using Combined GC/FTIR/MS, FT-Raman, and ATR Spectroscopies (U)

    SciTech Connect

    Smyrl, N. R.; Powell, G. L.

    2011-06-09

    Organic hydrogen getters are utilized to minimize hydrogen accumulation in sealed systems where such build up could produce either a safety problem from pressure build up or corrosion problem due the hydriding of metals contained in the sealed vessel. DEB (1,4 bis (phenyl ethynyl) benzene) is a hydrogen getter that is based on the palladium catalyzed hydrogenation of triple bonds to single bonds in aromatic aryl compound. DEB is a getter mixed with 25% carbon and 1% Pd and pressed into pellets with some porosity. The reaction mechanisms are complex involving solid state reactions with a heterogeneous catalyst leading to the many intermediates.

  18. Screening protocol for iodine-specific getters in YMP-related invert applications.

    SciTech Connect

    Krumhansl, James Lee; Pless, Jason; Chwirka, J. Benjamin

    2006-07-01

    This document defines a standardized screening protocol for use in developing iodine ''getters'' for placement in the proposed YMP-repository invert. The work was funded by the US Department of Energy (DOE), Office of Civilian Radioactive Waste Management (OCRWM), Office of Science and Technology International (S&T) during 2004-2005. First, the likely environmental conditions in the invert are reviewed as a basis for defining the thermal and geochemical regimes in which a getter must function. These considerations, then, served as the basis for laying out a hierarchy of materials screening tests (Table 1). An experimental design for carrying out these screening tests follows next. Finally, the latter half of the document develops methods for preparing test solutions with chemistries that relate to various aspects of the YMP-repository environment (or, at least to such representations as were available from program documents late in 2004). Throughout the document priority was given to defining procedures that would quickly screen out unpromising candidate materials with a minimum amount of labor. Hence, the proposed protocol relies on batch tests over relatively short times, and on a hierarchy of short pre-test conditioning steps. So as not to repeat the mistakes (and frustrations) encountered in the past (notably in preparing WIPP test brines) particular care was also given to developing standardized test solution recipes that could be prepared easily and reproducibly. This document is principally intended for use as a decision-making tool in evaluating and planning research activities. It is explicitly NOT a roadmap for qualifying getters for actual placement in the repository. That would require a comprehensive test plan and a substantial consensus building effort. This document is also not intended to provide a complete list of all the tests that individuals may wish to carry out. Various materials will have their own peculiar concerns that will call for

  19. Screening Protocol for Iodine-Specific Getters in YMP-Related Invert Applications

    SciTech Connect

    J.L. Krumhansl; J.D. Pless; J.B. Chwirka

    2006-07-17

    This document defines a standardized screening protocol for use in developing iodine ''getters'' for placement in the proposed YMP-repository invert. The work was funded by the US Department of Energy (DOE), Office of Civilian Radioactive Waste Management (OCRWM), Office of Science and Technology International (S&T) during 2004-2005. First, the likely environmental conditions in the invert are reviewed as a basis for defining the thermal and geochemical regimes in which a getter must function. These considerations, then, served as the basis for laying out a hierarchy of materials screening tests (Table 1). An experimental design for carrying out these screening tests follows next. Finally, the latter half of the document develops methods for preparing test solutions with chemistries that relate to various aspects of the YMP-repository environment (or, at least to such representations as were available from program documents late in 2004). Throughout the document priority was given to defining procedures that would quickly screen out unpromising candidate materials with a minimum amount of labor. Hence, the proposed protocol relies on batch tests over relatively short times, and on a hierarchy of short pre-test conditioning steps. So as not to repeat the mistakes (and frustrations) encountered in the past (notably in preparing WIPP test brines) particular care was also given to developing standardized test solution recipes that could be prepared easily and reproducibly. This document is principally intended for use as a decision-making tool in evaluating and planning research activities. It is explicitly NOT a roadmap for qualifying getters for actual placement in the repository. That would require a comprehensive test plan and a substantial consensus building effort. This document is also not intended to provide a complete list of all the tests that individuals may wish to carry out. Various materials will have their own peculiar concerns that will call for

  20. Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment

    SciTech Connect

    Kim, Yong-Seung; Bansal, Namrata; Oh, Seongshik

    2011-07-15

    Source oxidation of easily oxidizing elements such as Ca, Sr, Ba, and Ti in an oxidizing ambient leads to their flux instability and is one of the biggest problems in the multielemental oxide molecular beam epitaxy technique. Here, the authors report a new scheme that can completely eliminate the source oxidation problem: a self-gettering differential pump using the source itself as the pumping medium. The pump simply comprises a long collimator mounted in front of the source in extended port geometry. With this arrangement, the oxygen partial pressure near the source was easily maintained well below the source oxidation regime, resulting in a stabilized flux, comparable to that of an ultrahigh-vacuum environment. Moreover, this pump has a self-feedback mechanism that allows a stronger pumping effectiveness for more easily oxidizing elements, which is a desired property for eliminating the source oxidation problem.

  1. ZrCo as a new H2 storage and getter for Lyman alpha radiation sources

    NASA Astrophysics Data System (ADS)

    Woyke, Thomas; Schiller, Cornelius; Schmidt, Ulrich; Schober, Tilman; Zöger, Martin

    1995-01-01

    In the past, in sealed-off Lyman- alpha radiation sources (121.57 nm), uranium hydride was used as the hydrogen reservoir. We found that the zirconium-cobalt alloy ZrCo, which has similar thermodynamic properties, can also be used for hydrogen storage in such lamps. Like uranium, ZrCo acts as a getter for atmospheric contaminants. The advantage of the use of ZrCo lies in much easier and safer handling during production and disposal of the lamps. Using ZrCo, we succeeded in producing radiation sources with a large Lyman- alpha radiation output and high spectral purity, which were successfully applied in a Lyman- alpha fluorescence hygrometer for stratospheric observations.

  2. Workshop on development of radionuclide getters for the Yucca Mountain waste repository: proceedings.

    SciTech Connect

    Moore, Robert Charles; Lukens, Wayne W. (Lawrence Berkeley National Laboratory)

    2006-03-01

    The proposed Yucca Mountain repository, located in southern Nevada, is to be the first facility for permanent disposal of spent reactor fuel and high-level radioactive waste in the United States. Total Systems Performance Assessment (TSPA) analysis has indicated that among the major radionuclides contributing to dose are technetium, iodine, and neptunium, all of which are highly mobile in the environment. Containment of these radionuclides within the repository is a priority for the Yucca Mountain Project (YMP). These proceedings review current research and technology efforts for sequestration of the radionuclides with a focus on technetium, iodine, and neptunium. This workshop also covered issues concerning the Yucca Mountain environment and getter characteristics required for potential placement into the repository.

  3. Evaluation of RTV as a Moldable Matrix When Combined With Molecular Sieve and Organic Hydrogen Getter

    SciTech Connect

    Knight, J. A.

    2011-12-01

    This work was undertaken in an effort to develop a combined RTV 615/3Å molecular sieve/DEB molded component. A molded RTV 615/3Å molecular sieve component is currently in production, and an RTV 615/DEB component was produced in the past. However, all three materials have never before been combined in a single production part, and this is an opportunity to create a new component capable of being molded to shape, performing desiccation, and hydrogen gettering. This analysis looked at weapons system parameters and how they might influence part design. It also looked at material processing and how it related to mixing, activating a dessicant, and hydrogen uptake testing.

  4. Transient enhanced diffusion and gettering of dopants in ion implanted silicon

    SciTech Connect

    Pennycook, S.J.; Narayan, J.; Culbertson, R.J.

    1984-01-01

    We have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss conflicting observations on As/sup +/ implanted Si.

  5. Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering

    SciTech Connect

    Abdelbarey, D.; Kveder, V.; Schroeter, W.; Seibt, M.

    2010-08-15

    Deep level transient spectroscopy is used to study light-induced reactions of residual iron impurities after aluminum gettering (AlG) in crystalline silicon. White-light illumination at room temperature leads to the formation of a defect which is associated with a donor level at 0.33 eV above the valence band. This defect is stable up to about 175 deg. C where it dissociates reversibly in case of small iron concentrations and irreversibly for high iron concentrations. Since marker experiments using gold and platinum diffusion show a high vacancy concentration after AlG a tentative identification of the new defect as the metastable iron-vacancy pair is proposed.

  6. Characterization of titanium films in the Tandem Mirror Experiment Upgrade (TMX-U)

    SciTech Connect

    Hsu, W.L.; Bastasz, R.; Bauer, W.; Malinowski, M.E.; Mills, B.E.; Allen, S.L.; Clower, C.A.

    1984-04-01

    Titanium gettering is used extensively in the Tandem Mirror Experiment Upgrade (TMX-U) to achieve good vacuum conditions for the production of a sustained energetic plasma. The gettering films under different operating conditions were analyzed by thermal desorption spectroscopy and Auger electron spectroscopy. A sputter profile of the films showed a Ti deposition rate of approx. =1 nm per evaporation sequence. Large quantities of protium (H/Tiroughly-equal0.2), oxygen (O/Tiroughly-equal0.3), and carbon (C/Tiroughly-equal0.1) were detected in the films regardless of their location and the plasma isotope to which they were exposed. While the Ti films that were exposed to deuterium plasmas showed a substantial increase in deuterium content, deuterium still remained a small fraction of the overall hydrogen concentration (D/Hroughly-equal0.1). Analyses of the results suggest that getter pumping of H/sub 2/O from the background gas in the (TMX-U) vacuum system is the primary source for protium and oxygen measured in the films.

  7. Method of forming metal hydride films

    NASA Technical Reports Server (NTRS)

    Steinberg, R.; Alger, D. L.; Cooper, D. W. (Inventor)

    1977-01-01

    The substrate to be coated (which may be of metal, glass or the like) is cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system, vapor deposition by a sublimator or vaporizer coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate. After the hydride forming metal coating is formed, deuterium or other hydrogen isotopes are bled into the vacuum system and diffused into the metal film or coating to form a hydride of metal film. Higher substrate temperatures and pressures may be used if various parameters are appropriately adjusted.

  8. The Role of Oxygen Transfer in Sintering of Low Alloy Steel Powder Compacts: A Review of the "Internal Getter" Effect

    NASA Astrophysics Data System (ADS)

    Gierl-Mayer, Christian; de Oro Calderon, Raquel; Danninger, Herbert

    2016-03-01

    The chemical aspects of sintering have to be considered, in particular the role of oxygen. For sintered alloy steels used for highly stressed components, traditional alloy elements have been Cu, Ni and Mo, which in their oxygen affinity are very similar to the base constituent iron. Advanced alloying systems however contain Cr, Mn and/or Si. In the present study it is shown that one of the principal aspects of sintering to be considered is oxygen transfer from the base iron oxides to the alloy elements, which then form oxides that are more difficult to reduce. This process, defined as "internal gettering", occurs both in mixed powder compacts and in prealloyed materials, although through different mechanisms. The effect can at least be alleviated by presintering in H2 in the 400°C range, part of the oxygen being removed as H2O before internal gettering becomes kinetically effective. However, in industrial practice, this collides with delubricaton. Furthermore for both alloy variants high temperature sintering is advantageous because it enhances reduction of the more stable oxides, thus eliminating the effects of internal gettering.

  9. Improved Hydrogen Gas Getters for TRU Waste Transuranic and Mixed Waste Focus Area - Phase 2 Final Report

    SciTech Connect

    Stone, Mark Lee

    2002-04-01

    Alpha radiolysis of hydrogenous waste and packaging materials generates hydrogen gas in radioactive storage containers. For that reason, the Nuclear Regulatory Commission (NRC) limits the flammable gas (hydrogen) concentration in the Transuranic Package Transporter-II (TRUPACT-II) containers to 5 vol% of hydrogen in air, which is the lower explosion limit. Consequently, a method is needed to prevent the build up of hydrogen to 5 vol% during the storage and transport of the TRUPACT-II containers (up to 60 days). One promising option is the use of hydrogen getters. These materials scavenge hydrogen from the gas phase and irreversibly bind it in the solid phase. One proven getter is a material called 1,4-bis (phenylethynyl) benzene, or DEB. It has the needed binding rate and capacity, but some of the chemical species that might be present in the containers could interfere with its ability to remove hydrogen. This project is focused upon developing a protective polymeric membrane coating for the DEB getter material, which comes in the form of small, irregularly shaped particles. This report summarizes the experimental results of the second phase of the development of the materials.

  10. EVALUATION AND SELECTION OF 99TC GETTERS FOR SEQUESTRATION OF LIQUID SECONDARY WASTE RESULTING FROM VITRIFICATION OF RADIOACTIVE WASTE FROM HANFORD

    SciTech Connect

    Mattigod, Shas V.; Westsik, Joseph H.

    2011-03-31

    Getters are most commonly inorganic materials that selectively adsorb radionuclide and metallic contaminants. Typically, these materials have been deployed in two different modes to immobilize and retard contaminant release from monolithic waste forms. One mode is to first use getters to selectively scavenge the radionuclide of interest from a liquid waste stream, and then incorporate the radionuclide-loaded getters in cementitious or other monolithic waste forms. The other mode consists of mixing getters and liquid waste together during formulation of monolithic waste forms. Desirable characteristics for a getter material include, (1) specific adsorption of radionuclide of interest and very high selectivity toward radionuclides of concern in concentrations that would be several orders of magnitude less than the concentrations of competing anions and cations, (2) adsorption capacity that should be sufficient for the mass and volume of the material that will be deployed to be within practicable limits, (3) long-term adsorption and retention of radionuclide, (4) sufficient physical and chemical stability that its radionuclide retention performance will not degrade significantly during the designed life span of the waste form, (5) chemical stability under the range of Eh, pH, and solution conditions that exist in the waste form environment, and (6) should not adversely affect chemical and physical integrity of waste forms. We conducted a literature review to identify getters that are suitable for effectively sequestering 99Tc in monolithic waste forms that are being evaluated for stabilizing secondary liquid waste streams resulting from treatment and vitrification of radioactive tank wastes at Hanford. As a result of this review, we identified a set of getters that warrant further evaluation for this specific application.

  11. Complete Initial Scoping Tests on the Incorporation of Novel Loaded Iodine Getters into GCM.

    SciTech Connect

    Nenoff, Tina M.; Garino, Terry J.; Croes, Kenneth James

    2015-08-18

    This study encompasses initial scoping tests on the incorporation of a novel iodine loaded getter material into the Sandia developed low temperature sintering glass ceramic material (GCM) waste form. In particular, we studied the PNNL Ag-I-Aerogel. Optical microscopy indicates inhomogenous samples based on particle sizes and variations in color (AgI vs Ag/AgO on silica). TGA/MS data when heated in air indicates loss of iodine and organics (CO2) between 250-450°C a total of ~15wt% loss, with additional / small iodine loss when during 550°C hold for 1 hr. TGA/MS data when heated in N2 indicates less organic and slightly less iodine loss below 550°C, with no loss of iodine in 550°C 1 hour hold. Furthermore, a substantial mass loss of sulfur containing compounds is observed (m/e of 34 and 36) between 150 – 550°C in both air and N2 sintering atmospheres. In an effort to capture iodine lost to volatilization during heating (at temps below glass sintering temperature of 550°C), we added 5 wt% Ag flake to the AgIaerogel. Resulting data indicates the iodine is retained with the addition of the Ag flake, resulting in only a small iodine loss (< 1wt%) at ~350°C. No method of curtailing loss of sulfur containing compounds due to heating was successful in this scoping study.

  12. Combined Impact of Heterogeneous Lifetime and Gettering on Solar Cell Performance

    SciTech Connect

    Morishige, A.; Wagner, H.; Hofstetter, J.; Avci, I.; Canizo, C.; Buonassisi, T.

    2015-03-23

    We couple numerical process and device simulations to provide a framework for understanding the combined effects of as-grown wafer impurity distribution, processing parameters, and solar cell architecture. For this study, we added the Impurity-to-Efficiency simulator to Synopsys’ Sentaurus Process software using the Alagator Scripting Language. Our results quantify how advanced processing can eliminate differences in efficiency due to different as-grown impurity concentrations and due to different area fractions of defective wafer regions. We identify combinations of as-grown impurity distributions and process parameters that produce solar cells limited by point defects and those that are limited by precipitated impurities. Gettering targeted at either point defect or precipitate reduction can then be designed and applied to increase cell efficiency. We also visualize the post-processing iron and total recombination distributions in 2D maps of the wafer cross-section. PV researchers and companies can input their initial iron distributions and processing parameters into our software and couple the resulting process simulation results with a solar cell device design of interest to conduct their own analyses. The Alagator scripts we developed are freely available online at http://pv.mit.edu/impurity-to-efficiency-i2e-simulator-for-sentaurus-tcad/.

  13. Yucca mountain project getter program results(year 1):I-129 and other anions of concern.

    SciTech Connect

    Krumhansl, James Lee; Pless, Jason; Chwirka, J. Benjamin

    2006-07-01

    Although high level nuclear wastes (HLW) contain a daunting array of radioisotopes, only a restricted number are long-lived enough to be problematic, and of these many are either effectively insoluble or are likely to be scavenged from solution by minerals indigenous to all aquifers. Those few constituents likely to travel significant distances through aquifers either form colloids (and travel as particulates) or anions--which are not sorbed onto the predominantly negatively charged mineral surfaces. Iodine ({sup 129}I) is one such constituent and may travel as either iodide (I{sup -}) or iodate (IO{sub 3}{sup -}) depending on whether conditions are mildly reducing or oxidizing. Conventionally, {sup 99}Tc (traveling as TcO{sub 4}{sup -}) is regarded as being of greater concern since it is both more abundant and has a shorter half life (e.g., has a higher specific activity). However, it is unclear whether TcO{sub 4}{sup -} will ever actually form in the mildly reducing environments thought likely within degrading HLW canisters. Instead, technetium may remain reduced as highly insoluble Tc(IV), in which case {sup 129}I might become a significant risk driver in performance assessment (PA) calculations. In the 2004-2005 time frame the US Department of Energy (DOE)--Office of Civilian Radioactive Waste Management (OCRUM), Office of Science and Technology International (S&T) funded a program to identify ''getters'' for possible placement in the invert beneath HLW packages in the repository being planned by the Yucca Mountain Project (YMP). This document reports on progress made during the first (and only) year of this activity. The problem is not a new one and the project did not proceed in a complete vacuum of information. Potential leads came from past studies directed at developing anion getters for a near surface low-level waste facility at Hanford, which suggested that both copper-containing compounds and hydrotalcite-group minerals might be promising. Later work

  14. Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

    NASA Astrophysics Data System (ADS)

    Wagner, Hannes; Dastgheib-Shirazi, Amir; Min, Byungsul; Morishige, Ashley E.; Steyer, Michael; Hahn, Giso; del Cañizo, Carlos; Buonassisi, Tonio; Altermatt, Pietro P.

    2016-05-01

    The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 1018 cm-3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivity ρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.

  15. Rapid-thermal-processing-based internal gettering for heavily boron-doped Czochralski silicon

    NASA Astrophysics Data System (ADS)

    Fu, Liming; Yang, Deren; Ma, Xiangyang; Tian, Daxi; Que, Duanlin

    2006-11-01

    The effect of rapid-thermal processing (RTP) ambients on the formation of oxygen precipitates and denuded zone (DZ) in heavily boron-doped (HB) Czochralski (Cz) silicon by a low-high (L-H) two-step annealing (800°C/4h+1000°C/16h) has been investigated. It was found that after the L-H two-step annealing, there was a high density of bulk microdefects (BMDs) and no observable DZ was formed near the surface in HB Cz silicon wafers preannealed by the RTP in Ar ambient, while the BMD density was quite low in HB Cz silicon wafers preannealed by the RTP in O2 ambient. However, applying the preannealing of RTP sequentially in Ar and O2 ambients allowed us to obtain a high density of BMDs in combination with a sufficient DZ by the subsequent L-H two-step annealing. This approach offers a pathway to optimize internal gettering for HB Cz silicon.

  16. Introducing porous silicon as a sacrificial material to obtain cavities in substrate of SOI wafers and a getter material for MEMS devices

    NASA Astrophysics Data System (ADS)

    Mohammad, Wajihuddin

    Microelectromechanical system (MEMS) resonators have been a subject of research for more than four decades. The reason is the huge potential they possess for frequency applications. The use of a MEMS resonator as the timing element has an experimental history and huge progress has been made in this direction. Vacuum encapsulated MEMS resonators are required for high precision frequency control. Hence, a device with a high quality factor and durability is needed. In this effort, a new process for producing a cavity in the substrate of Silicon on insulator (SOI) MEMS devices and augmenting it with a getter using porous silicon is developed. The process involves a mask-less, self-aligned cost effective electrochemical etching process. A 10 mum cavity is introduced in the substrate of SOI dies. This helps in increasing the packaging volume of the SOI resonators along with mitigating the viscous damping effects. The stiction problem in MEMS devices is effectively eliminated and millimeter long slender MEMS structures do not get stuck to the substrate. It also helps in reducing the parasitic capacitance between the device side and the substrate. The porous silicon getter is introduced as a getter material for vacuum encapsulated MEMS devices. This getter needs no external mask and is self-aligned. It requires no external heat or additional materials to operate. The highly reactive porous silicon can readily react with the oxygen gas and form an oxide layer that can trap other gas molecules. This helps in maintaining low pressures in the cavity of the bonded MEMS resonators. A tuning fork resonator with a resonant frequency of 245 kHz was used to realize the benefits of the cavity and the getter. It was observed that the unpackaged device with the cavity in the substrate showed two times better quality factor at different pressures, than the device with no cavity. In order to understand the benefits of porous silicon as a getter, the MEMS devices (one with only a cavity

  17. Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure

    NASA Astrophysics Data System (ADS)

    Joge, Toshio; Araki, Ichiro; Uematsu, Tsuyoshi; Warabisako, Terunori; Nakashima, Hiroshi; Matsukuma, Kunihiro

    2003-09-01

    Gettering kinetics of Fe contaminant by doped boron during low-temperature annealing is discussed to improve the minority carrier lifetime in bifacial silicon solar cells with an n+pp+ back surface field (BSF) structure composed of a boron-doped p-base and a boron diffused p+ layer. A model for Fe-gettering by boron is introduced and computer simulations are carried out for the change in minority carrier lifetime along the thermal process in cell fabrication. Lifetime behavior shows good consistency with experimental results when “Fe-behavior parameters” and proper boundary conditions of the initial Fe concentration being higher than the solubility limit at the gettering temperature are taken into account. As a consequence, low-temperature boron gettering employed after boron diffusion for BSF fabrication is found to markedly improve the carrier lifetime cooperating with the phosphorous gettering associated with the pn junction formation, and can recover the initial high lifetimes before cell fabrication. Additionally, a certain condition of short-time heat treatment at higher temperature is found for firing which does not deteriorate the recovered lifetimes.

  18. Assessing materials (''Getters'') to immobilize or retard the transport of technetium through the engineered barrier system at the potential Yucca Mountain nuclear waste repository

    SciTech Connect

    Viani, B E

    1999-03-15

    Current performance assessment calculations show that technetium (Tc) and neptunium (Np) will deliver the major fraction of the radiation dose to the accessible environment from the potential Yucca Mountain nuclear waste repository. Therefore, materials that can immobilize or delay the transport of Tc or Np (getters) are being considered for addition to either the waste-package or the backfill adjacent to the waste-package. Of the two radionuclides, Tc presents the greater challenge in identifying a suitable getter material. This report identifies several materials that warrant further consideration for immobilizing and/or sorbing Tc as additives to the backfill, and recommends active carbon and an inorganic oxide for initial testing. Other materials, such as zero valent iron, might be useful as getters if they were placed in the waste package itself, a subject that merits further investigation.

  19. Absorption and desorption of hydrogen, deuterium, and tritium for Zr--V--Fe getter

    SciTech Connect

    Ichimura, K.; Inoue, N.; Watanabe, K.; Takeuchi, T.

    1984-07-01

    Nonevaporable getters have wide applicability for developing the tritium handling techniques for thermonuclear fusion devices. From this viewpoint, mechanisms of the absorption and desorption of hydrogen isotopes and the isotope effects were investigated for a Zr--V--Fe alloy (St-707) by means of the mass analyzed thermal desorption spectroscopy. It was observed that the absorption rate was proportional to the first power of the pressure, indicating that the rate limiting step is the dissociative adsorption of hydrogen isotopes on the surface. The activation energy was very small, in the order of magnitude of a few tens of calories per mole in a temperature range from -196 to 200 /sup 0/C. The desorption rate was proportional to the square of the amount of absorption, indicating that the rate limiting step is the associative desorption reaction of hydrogen atoms or ions diffused to the surface from the bulk. The rate constants for hydrogen and deuterium were determined as k/sub d/(H/sub 2/) = (5.3/sup +2.6//sub -1.7/)exp(-(28.0 +- 0.7) x 10/sup 3//RT) and k/sub d/(D/sub 2/) = (5.0/sup +2.7//sub -1.7/)exp(-(28.6 +- 0.8) x 10/sup 3//RT) in (1/Pa 1 s), respectively, where R is in (cal/mol deg). With regard to tritium, the rate constant was evaluated as k/sub d/(T/sub 2/) = (5.0/sup +20//sub -4.0/)exp(-(29.3 +- 3) x 10/sup 3//RT), however, the frequency factor will have to be corrected by knowing the relative sensitivity factor of the mass spectrometer for tritium (T/sub 2/).

  20. Theoretical analysis of oxygen diffusion at startup in an alkali metal heat pipe with gettered alloy walls

    NASA Technical Reports Server (NTRS)

    Tower, L. K.

    1973-01-01

    The diffusion of oxygen into, or out of, a gettered alloy exposed to oxygenated alkali liquid metal coolant, a situation arising in some high temperature heat transfer systems, was analyzed. The relation between the diffusion process and the thermochemistry of oxygen in the alloy and in the alkali metal was developed by making several simplifying assumptions. The treatment is therefore theoretical in nature. However, a practical example pertaining to the startup of a heat pipe with walls of T-111, a tantalum alloy, and lithium working fluid illustrates the use of the figures contained in the analysis.

  1. Lithium-Gettered Moving Surface Plasma-Facing Components for Particle Control in Steady State Magnetic Fusion Devices

    SciTech Connect

    Hirooka, Yoshi; Ohgaki, Hirotsugu; Hosaka, Souichirou; Ohtsuka, Yusuke; Nishikawa, Masahiro

    2005-04-15

    In our previous work, the first proof-of-principle experiments were successfully conducted on the particle control capability based on the concept of moving-surface plasma-facing component (MS-PFC). Over a continuously titanium-gettered rotating drum, hydrogen recycling was found to be reduced down to levels around 94% even at steady state. These experiments on the MS-PFC concept have now been extended to the second stage where lithium is employed as the getter material, while using the same rotating drum. These experiments are intended to pilot the potential use of lithium as a flowing liquid facing the edge plasmas in steady state reactors beyond ITER. Reported in this paper are rather dramatic findings that hydrogen recycling is reduced down to levels around 76% and 86% at steady state over the rotating drum at the lithium deposition rates of 9.5 A/s and 7.3 A/s, respectively. These steady state recycling data have been nicely reproduced by a simple zero-dimensional particle balance model.

  2. Design and Analysis of a Getter-Based Vacuum Pumping System for a Rocket-Borne Mass Spectrometer

    NASA Astrophysics Data System (ADS)

    Everett, E. A.; Syrstad, E. A.; Dyer, J. S.

    2010-12-01

    The mesosphere / lower thermosphere (MLT) is a transition region where the turbulent mixing of earth’s lower atmosphere gives way to the molecular diffusion of space. This region hosts a rich array of chemical processes and atmospheric phenomena, and serves to collect and distribute particles of all sizes in thin layers. Spatially resolved in situ characterization of these layers is very difficult, due to the elevated pressure of the MLT, limited access via high-speed sounding rockets, and the enormous variety of charged and neutral species that range in size from atoms to smoke and dust particles. In terrestrial applications, time-of-flight mass spectrometry (TOF-MS) is the technique of choice for performing fast, sensitive composition measurements with extremely large mass range. However, because of its reliance on high voltages and microchannel plate (MCP) detectors prone to discharge at elevated pressures, TOF-MS has rarely been employed for measurements of the MLT, where ambient pressures approach 10 mTorr. We present a novel, compact mass spectrometer design appropriate for deployment aboard sounding rockets. This Hadamard transform time-of-flight mass spectrometer (HT-TOF-MS) applies a multiplexing technique through pseudorandom beam modulation and spectral deconvolution to achieve very high measurement duty cycles (50%), with a theoretically unlimited mass range. The HT-TOF-MS employs a simple, getter-based vacuum pumping system and pressure-tolerant MCP to allow operation in the MLT. The HT-TOF-MS must provide sufficient vacuum pumping to 1) maintain a minimum mean free path inside the instrument, to avoid spectral resolution loss, and 2) to avoid MCP failure through electrostatic discharge. The design incorporates inexpensive, room temperature tube getters loaded with nano-structured barium to meet these pumping speed requirements, without the use of cryogenics or mechanical pumping systems. We present experimental results for gettering rates and

  3. Gettering effects in Si{sub x}Ge{sub 1-x} single crystalline wafers

    SciTech Connect

    Wollweber, J.; Schulz, D.; Schroeder, W.

    1995-08-01

    The new interest in single crystal growth of SiGe solid solutions is caused by the development of advanced electronics. The SiGe alloys are mostly used in the form of Si/Si{sub x}Ge{sub 1-x} epitaxial layers in heterostructures, the perfect bulk crystals are required to study fundamental properties. Furthermore, Si{sub x}Ge{sub 1-x} crystals can be used as a substrate material instead of Silicon in order to avoid the buffer layers between the Silicon substrate and strained Si{sub x}Ge{sub 1-x}. Monocrystalline SiGe alloys may be a potential candidate as a base material for infrared solar cells too because of an enhanced IR-sensitivity. In this paper we report a new approach to the growth of Si{sub x}Ge{sub 1-x} single crystals (up to 2{double_prime} in diameter) using the crucible free rf-heated float zone technique as well as the Czochralski-technique for solar cells. The goal is to produce solar cells with an increased photo current in comparison to Silicon cells. based on the lower bandgap of the alloyed crystal. In order to be able to use the Si cells technology (a matter still pending to be proven), low contents of Ge are intended, desirably in the range of about x=0.2. It is worth to mention, that in the conventional Silicon cell processes which give efficiencies up to 18-19%, this efficiency is not limited by the bulk base recombination in the lifetime is above 200 {mu}s there. We can conclude, that there is no basic limitation did prevents Si{sub x}Ge{sub 1-x} wafers to present high lifetimes, above 200{mu}s, at least if the Ge content is below 5%. We can also conclude that the phosphorous gettering from a POCl{sub 3} source, used in silicon, can be successfully used to enhance lifetimes in Si{sub x}Ge{sub 1-x}, at least for the Ge concentration used here.

  4. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    SciTech Connect

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  5. Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Stoltz, A. J.; Benson, J. D.; Smith, P.; Lennon, C. M.; Almeida, L. A.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Salmon, M.; Zu, J.

    2013-11-01

    Due to its strong infrared absorption and variable band-gap, HgCdTe is the ideal detector material for high-performance infrared focal-plane arrays (IRFPAs). Next-generation IRFPAs will utilize dual-color high-definition formats on large-area substrates such as Si or GaAs. However, heteroepitaxial growth on these substrates is plagued by high densities of lattice-mismatch-induced threading dislocations (TDs) that ultimately reduce IRFPA operability. Previously we demonstrated a postgrowth technique with the potential to eliminate or move TDs such that they have less impact on detector operability. In this technique, highly reticulated mesa structures are produced in as-grown HgCdTe epilayers, and then subjected to thermal cycle annealing. To fully exploit this technique, better understanding of the inherent mechanism is required. In this work, we employ scanning transmission electron microscopy (STEM) analysis of HgCdTe/CdTe/Si(211) samples prepared by focused ion beam milling. A key factor is the use of defect-decorated samples, which allows for a correlation of etch pits observed on the surface with underlying dislocation segments viewed in cross-section STEM images. We perform an analysis of these dislocations in terms of the general distribution, density, and mobility at various locations within the mesa structures. Based on our observations, we suggest factors that contribute to the underlying mechanism for dislocation gettering.

  6. Yucca Mountain Project Getter Program Results (Year 1) I-I29 and Other Anions of Concern

    SciTech Connect

    J.L. Krumhansl; J.D. Pless; J.B. Chwirka; K.C. Holt

    2006-07-17

    Although high level nuclear wastes (HLW) contain a daunting array of radioisotopes, only a restricted number are long-lived enough to be problematic, and of these many are either effectively insoluble or are likely to be scavenged from solution by minerals indigenous to all aquifers. Those few constituents likely to travel significant distances through aquifers either form colloids (and travel as particulates) or anions--which are not sorbed onto the predominantly negatively charged mineral surfaces. Iodine ({sup 129}I) is one such constituent and may travel as either iodide (I{sup -}) or iodate (IO{sub 3}{sup -}) depending on whether conditions are mildly reducing or oxidizing. Conventionally, {sup 99}Tc (traveling as TcO{sub 4}{sup 0}) is regarded as being of greater concern since it is both more abundant and has a shorter half life (e.g., has a higher specific activity). However, it is unclear whether TcO{sub 4}{sup -} will ever actually form in the mildly reducing environments thought likely within degrading HLW canisters. Instead, technetium may remain reduced as highly insoluble Tc(lV), in which case {sup 129}I might become a significant risk driver in performance assessment (PA) calculations. In the 2004-2005 time frame the US Department of Energy (DOE)--Office of Civilian Radioactive Waste Management (OCRUM), Office of Science and Technology International (S&T) funded a program to identify ''getters'' for possible placement in the invert beneath HLW packages in the repository being planned by the Yucca Mountain Project (YMP). This document reports on progress made during the first (and only) year of this activity. The problem is not a new one and the project did not proceed in a complete vacuum of information. Potential leads came from past studies directed at developing anion getters for a near surface low-level waste facility at Hanford, which suggested that both copper-containing compounds and hydrotalcite-group minerals might be promising. Later work

  7. Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

    NASA Astrophysics Data System (ADS)

    Al-Amin, M.; Murphy, J. D.

    2016-06-01

    We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poor wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.

  8. The Effect of Gas Ion Bombardment on the Secondary Electron Yield of TiN, TiCN and TiZrV Coatings For Suppressing Collective Electron Effects in Storage Rings

    SciTech Connect

    Le Pimpec, F.; Kirby, R.E.; King, F.K.; Pivi, M.; /SLAC

    2006-01-25

    In many accelerator storage rings running positively charged beams, ionization of residual gas and secondary electron emission (SEE) in the beam pipe will give rise to an electron cloud which can cause beam blow-up or loss of the circulating beam. A preventative measure that suppresses electron cloud formation is to ensure that the vacuum wall has a low secondary emission yield (SEY). The SEY of thin films of TiN, sputter deposited Non-Evaporable Getters and a novel TiCN alloy were measured under a variety of conditions, including the effect of re-contamination from residual gas.

  9. Surface segregation as a means of gettering Cu in liquid-phase-epitaxy silicon thin layers grown from Al-Cu-Si solutions

    SciTech Connect

    Wang, T.H.; Ciszek, T.F.; Reedy, R.; Asher, S.; King, D.

    1996-05-01

    The authors demonstrate that, by using the natural surface segregation phenomenon, Cu can be gettered to the surface from the bulk of silicon layers so that its concentrations in the liquid-phase-epitaxy (LPE) layers are much lower than its solubility at the layer growth temperature and the reported 10{sup 17} cm{sup {minus}3} degradation threshold for solar-cell performance. Secondary-ion mass spectroscopy (SIMS) analysis indicates that, within a micron-deep sub-surface region, Cu accumulates even in as-grown LPE samples. Slower cooling after growth to room temperature enhances this Cu enrichment. X-ray photoelectron spectroscopy (XPS) measurement shows as much as 3.2% Cu in a surface region of about 50 {Angstrom}. More surface-sensitive, ion-scattering spectroscopy (ISS) analysis further reveals about 7% of Cu at the top surface. These results translate to an areal gettering capacity of about 1.0 x 10{sup 16} cm{sup {minus}2}, which is higher than the available total-area density of Cu in the layer and substrate (3.6 x 10{sup 15} cm{sup {minus}2} for a uniform 1.2 x 10{sup 17}cm{sup {minus}3} Cu throughout the layer and substrate with a total thickness of 300 {mu}m).

  10. Film Reviews.

    ERIC Educational Resources Information Center

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  11. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Zhang, Bo; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-12-01

    TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin film coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd films were about 0.42-1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2-4 nm, but for Pd film it is large, about 17-19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results. Supported by National Natural Science Funds of China (11205155) and Fundamental Research Funds for the Central Universities (WK2310000041)

  12. Molecular desorption of a nonevaporable getter St 707 irradiated at room temperature with synchrotron radiation of 194 eV critical photon energy

    NASA Astrophysics Data System (ADS)

    Le Pimpec, F.; Gröbner, O.; Laurent, J. M.

    2003-05-01

    Photon stimulated molecular desorption from a nonevaporable getter (NEG) St 707® (SAES Getters™) surface after conditioning and after saturation with isotopic carbon monoxide [cf. nomenclature in Handbook of Chemistry and Physics, 74th edition, edited by D. R. Lide (CRC Press, Boca Raton, 1994)] 13C18O, has been studied on a dedicated beamline at the EPA ring at CERN. The synchrotron radiation of 194 eV critical energy and with an average photon intensity of ~1×1017 photons s-1 was impinging on the sample at perpendicular incidence. It is found that the desorption yields ɛ (molecules/photon) of the characteristic gases in an UHV system (hydrogen, methane, carbon monoxide, and carbon dioxide) for a freshly activated NEG and for a NEG fully saturated with 13C18O are lower than that of 300 °C baked stainless steel.

  13. Preparation of CaO as OLED getter material through control of crystal growth of CaCO{sub 3} by block copolymers in aqueous solution

    SciTech Connect

    Park, Jae-Hyung; Oh, Seong-Geun

    2009-01-08

    As the starting materials of organic light-emitting diode (OLED) getter, calcium carbonate (CaCO{sub 3}) particles with various shapes and crystal structures have been successfully prepared with additives (L64 or PEGPG), which contain blocks of poly(ethylene oxide) (PEO) and poly(propylene oxide) (PPO). These CaCO{sub 3} particles were calcinated into highly crystalline calcium oxide (CaO) nanoparticles with high capacity of water adsorption up to 14.23 wt.%. The CaCO{sub 3} and CaO particles prepared at various conditions were characterized using the field emission scanning electron microscopy (FE-SEM), Fourier transform infrared microscopy (FT-IR), X-ray powder diffraction (XRD), and dynamic vapor sorption (DVS) method.

  14. Application of Vacancy Injection Gettering to Improve Efficiency of Solar Cells Produced by Millinet Solar: Cooperative Research and Development Final Report, CRADA Number CRD-10-417

    SciTech Connect

    Sopori, B.

    2012-07-01

    NREL will apply vacancy injection gettering (VIG) to Millinet solar cells and evaluate the performance improvement produced by this process step. The VIG will be done in conjunction with the formation of a back, Al-alloyed, contact. Millinet Solar will provide NREL with cells having AR coating on the front side and screen-printed Al on the backside, which will be processed in the NREL's optical furnace to perform simultaneous VIG and back contact alloying with deep BSF. These cells will be sent back to Millinet solar for a screen-printed front/side contact mask, followed by a second firing at NREL. Detailed analyses will be performed to determine improvements due to BSF and VIG.

  15. Thermochemical Assessment of Oxygen Gettering by SiC or ZrC in PuO2-x TRISO Fuel

    SciTech Connect

    Besmann, Theodore M

    2010-01-01

    Particulate nuclear fuel in a modular helium reactor is being considered for the consumption of excess plutonium and related transuranics. In particular, efforts to largely consume transuranics in a single-pass will require the fuel to undergo very high burnup. This deep burn concept will thus make the proposed plutonia TRISO fuel particularly likely to suffer kernel migration where carbon in the buffer layer and inner pyrolytic carbon layer is transported from the high temperature side of the particle to the low temperature side. This phenomenon is oberved to cause particle failure and therefore must be mitigated. The addition of SiC or ZrC in the oxide kernel or in a layer in communication with the kernel will lower the oxygen potential and therefore prevent kernel migration, and this has been demonstrated with SiC. In this work a thermochemical analysis was performed to predict oxygen potential behavior in the plutonia TRISO fuel to burnups of 50% FIMA with and without the presence of oxygen gettering SiC and ZrC. Kernel migration is believed to be controlled by CO gas transporting carbon from the hot side to the cool side, and CO pressure is governed by the oxygen potential in the presence of carbon. The gettering phases significantly reduce the oxygen potential and thus CO pressure in an otherwise PuO2-x kernel, and prevent kernel migration by limiting CO gas diffusion through the buffer layer. The reduction in CO pressure can also reduce the peak pressure within the particles by ~50%, thus reducing the likelihood of pressure-induced particle failure. A model for kernel migration was used to semi-quantitatively assess the effect of controlling oxygen potential with SiC or ZrC and did demonstrated the dramatic effect of the addition of these phases on carbon transport.

  16. Large-area Silicon-Film{trademark} panels and solar cells

    SciTech Connect

    Rand, J.A.; Barnett, A.M.; Checchi, J.C.

    1997-01-01

    This report describes AstroPower`s success in improving its material and processing capabilities during the first phase of this 3-year contract through the Photovoltaic Manufacturing Technology (PVMaT) program. Key results include the demonstration of a 14.6%-efficient Silicon-Film{trademark} solar cell. This laboratory result (1.0 cm{sup 2}) provides the direction needed to develop and optimize continuous, in-line production processes. The continuous nature of the Silicon-Film{trademark} sheet fabrication process is being extended into the solar-cell processing sequence. Plans are in place to make the wafer cleaning, gettering, and diffusion steps all continuous during the scope of this program.

  17. Influence of ceramic package internal components on the performance of vacuum sealed uncooled bolometric detectors

    NASA Astrophysics Data System (ADS)

    Paquet, Alex; Deshaies, Sébastien; Desroches, Yan; Whalin, Jeff; Topart, Patrice

    2013-03-01

    INO has developed a hermetic vacuum packaging technology for uncooled bolometric detectors based on ceramic leadless chip carriers (LCC). Cavity pressures less than 3 mTorr are obtained. Processes are performed in a state-of-the art semi-automated vacuum furnace that allows for independent activation of non-evaporable thin film getters. The getter activation temperature is limited by both the anti-reflection coated silicon or germanium window and the MEMS device built on CMOS circuits. Temperature profiles used to achieve getter activation and vacuum sealing were optimized to meet lifetime and reliability requirements of packaged devices. Internal package components were carefully selected with respect to their outgassing behavior so that a good vacuum performance was obtained. In this paper, INO's packaging process is described. The influence of various package internal components, in particular the CMOS circuits, on vacuum performance is presented. The package cavity pressure was monitored using INO's pressure microsensors and the gas composition was determined by internal vapor analysis. Lifetime was derived from accelerated testing after storage of packaged detectors at various temperatures from room temperature to 120°C. A hermeticity yield over 80% was obtained for batches of twelve devices packaged simultaneously. Packaged FPAs submitted to standard MIL-STD-810 reliability testing (vibration, shock and temperature cycling) exhibited no change in IR response. Results show that vacuum performance strongly depends on CMOS circuit chips. Detectors packaged using a thin film getter show no change in cavity pressure after storage for more than 30 days at 120°C. Moreover, INO's vacuum sealing process is such that even without a thin film getter, a base pressure of less than 10 mTorr is obtained and no pressure change is observed after 40 days at 85°C.

  18. Film Reviews

    ERIC Educational Resources Information Center

    Dowling, John, Ed.

    1976-01-01

    Reviews five instructional films on: P-N junctions; crystal diodes; nuclear fusion research; Schlieren photography; and the energy crisis; including discussions of solar, nuclear, and fossil fuel energy. Also lists numerous other available films. (MLH)

  19. Film Boxes.

    ERIC Educational Resources Information Center

    Osterer, Irv

    2002-01-01

    Presents an art lesson in which students created three-dimensional designs for 35mm film packages to improve graphic arts learning. Describes how the students examined and created film boxes using QuarkXPress software. (CMK)

  20. Nanocomposite films

    DOEpatents

    Mitlin, David; , Ophus, Colin; Evoy, Stephane; Radmilovic, Velimir; Mohammadi, Reza; Westra, Ken; Nelson-Fitzpatrick, Nathaniel; Lee, Zonghoon

    2010-07-20

    A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.

  1. On Film

    ERIC Educational Resources Information Center

    Watts, Marty

    2006-01-01

    In this article, the author discusses the role of window films in enhancing indoor air quality in schools. Historically, window film has been used to reduce temperatures in buildings prone to overheating. Too much solar energy entering through windows makes occupants uncomfortable and air conditioning more costly. Film has been a simple solution…

  2. Humanistic Films.

    ERIC Educational Resources Information Center

    Gaffney, Maureen, Ed.

    1981-01-01

    Designed for media specialists and educators, this issue includes seven articles focusing on humanistic films for children. Following a brief editorial encouraging the ideals of humanism, the first article presents an analysis of seven films with positive sex-role models. Included is a model for evaluating children's films. The second article…

  3. Comparison of multicomponent quantitative analysis methods for the determination of boron and phosphorous in boronphosphosilicate glass films on silicon

    NASA Astrophysics Data System (ADS)

    Stout, Phil J.; Krishnan, K.

    1989-12-01

    Borophosphosilicate glass (BPSG) films are frequently used in silicon integrated circuits for multilevel interconnection coatings and for surface passivation to provide mechanical protection and improve electrical stability and reliability. BPSG films also act as "getters" of sodium and other metal ions impurities which might otherwise drift to the oxide/silicon interface and affect the electrical properties of the device. Many of these applications require careful control of the phosphorous and boron concentration in the glass film; consequently a rapid and precise measurement of these components is needed. Infrared analysis of BPSG films provides one non-destructive method for the determination of boron and phosphorous in BPSG films deposited on silicon. The BPSG analysis is done from the transmission spectra of silicon wafers coated with the BPSG film. Since heavily doped silicon exhibits continuous plasma absorption in the region where BPSG bands are present, the BPSG film should be deposited on silicon substrates having a resistivity of greater than 10 ohm-cm. A typical transmission spectrum of a BPSG film deposited on silicon is shown in Fig. 1. The phosphorous in the film is normally detected by measuring the band centered at about 1335 cm-1 which arises from P-0 stretch in the P205 moeity in the film, and the boron is measured from the B-0 stretch band centered at about 1420 cm-1. This absorption is from the B203 moiety. Normally, when BPSG glass films are deposited on the silicon substrate, the deposited films contain the phosphorous in different chemical forms - P2O5, P203, etc. - and also contain some trapped hydroxyl groups or moisture. The moisture may react with the P205 to form phosphoric acid. When this happens, and there is some P203 present in the film, the infrared methodology may not detect all of the phosphorous in the film since only the 1335 cm-1 band due to P2O5 is observed. It has been shown [1] that annealing of the deposited film removes

  4. Film ispalators

    SciTech Connect

    Startsev, Aleksandr V; Stoilov, Yurii Yu

    2002-05-31

    New physical objects, ispalators based on free soap films, exhibit persistent flows of the soap solution in open and closed volumes in air with additions of gases of the C{sub 8}F{sub 18} type (p = 20 Torr) at temperature drops on the films of the order of tenths and hundredths of kelvin. The flows move continuously at a velocity of 5 - 20 cm s{sup -1}. It is found that the parts of an inclined ispalator film show anomalous behaviour upon heating: their weight increases and they move downward over the film, whereas the unheated parts of the film move upward. Continuous radial vortex flows accompanied by the formation and washing of the regions of a thin black film are observed on circular films in closed volumes upon their uniform external cooling by evaporating water for 5 - 10 hours. The rapid flows make film ispalators the efficient heat carriers, which operate at small temperature drops (tenths and hundredths of kelvin) and surpass copper in the amount of thermal energy being transferred. The outlook for the further study and applications of film ispalators for detecting thermal fields and laser radiation is discussed. (laser applications and other topics in quantum electronics)

  5. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  6. About Films.

    ERIC Educational Resources Information Center

    Christman, Robert; Krockover, Gerald H.

    1984-01-01

    Lists and briefly describes 46 college-level films. Films are arranged in the following categories: volcanism and earthquakes; plate tectonics; energy, water, and environmental concerns; petroleum and coal; astronomy; space exploration, space shuttle; paleontology; geomorphology; and mineralogy, petrology, and economic geology. (BC)

  7. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  8. Film Language.

    ERIC Educational Resources Information Center

    Hudlin, Edward W.

    1979-01-01

    The author briefly surveys some of the claims made about the presumed nature of film as language and some of the problems that arise. He considers the views of two influential schools of film criticism: the Russian formalists (Pudovkin and Eisenstein) and the British semiologist (Peter Wollen). (Author/SJL)

  9. Film Makers On Film Making.

    ERIC Educational Resources Information Center

    Geduld, Harry M., Ed.

    This collection includes essays by and interviews with more than 30 film-makers, both classic and contemporary, on the subjects of their major interests and procedures in making films. The directors are: Louis Lumiere, Cecil Hepworth, Edwin S. Porter, Mack Sennett, David W. Griffith, Robert Flaherty, Charles Chaplin, Eric von Stroheim, Dziga…

  10. Film Reviews

    ERIC Educational Resources Information Center

    Ladd, George T.

    1974-01-01

    Briefly describes films about the following topics: water cycles, the energy crisis, the eruption of Mt. Aetna, the hot springs of Yellowstone National Park, and methods of using pine cones to determine the ages of ancient civilizations. (MLH)

  11. Piezoelectric Film.

    ERIC Educational Resources Information Center

    Garrison, Steve

    1992-01-01

    Presents activities that utilize piezoelectric film to familiarize students with fundamental principles of electricity. Describes classroom projects involving chemical sensors, microbalances, microphones, switches, infrared sensors, and power generation. (MDH)

  12. Polymer films

    DOEpatents

    Granick, Steve; Sukhishvili, Svetlana A.

    2004-05-25

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  13. Polymer films

    DOEpatents

    Granick, Steve; Sukhishvili, Svetlana A.

    2008-12-30

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  14. Getter materials for cracking ammonia

    DOEpatents

    Boffito, Claudio; Baker, John D.

    1999-11-02

    A method is provided for cracking ammonia to produce hydrogen. The method includes the steps of passing ammonia over an ammonia-cracking catalyst which is an alloy including (1) alloys having the general formula Zr.sub.1-x Ti.sub.x M.sub.1 M.sub.2, wherein M.sub.1 and M.sub.2 are selected independently from the group consisting of Cr, Mn, Fe, Co, and Ni, and x is between about 0.0 and about 1.0 inclusive; and between about 20% and about 50% Al by weight. In another aspect, the method of the invention is used to provide methods for operating hydrogen-fueled internal combustion engines and hydrogen fuel cells. In still another aspect, the present invention provides a hydrogen-fueled internal combustion engine and a hydrogen fuel cell including the above-described ammonia-cracking catalyst.

  15. Getters for Reliable Hermetic Packages

    NASA Technical Reports Server (NTRS)

    Ramesham, R.

    2000-01-01

    A variety of sealed-off devices such as cathode ray tubes (CRT's) electron tubes, plasma displays, particle accelarators and colliders vacuum thermal insulation, ultra-high vacuum (UHV), extreme high vacuum (XHV) systems for semiconductor processing, X-ray tubes, lamps, field-emission displays (FEDs) flat panel displays (FPDs), some microelectromechanical systems (MEMS) and science instruments for space applications, nuclear systems require a vacuum for their successful operation.

  16. Polymer formulations for gettering hydrogen

    DOEpatents

    Shepodd, Timothy J.; Even, Jr., William R.

    2000-01-01

    A novel method for preparing a hydrogenation composition comprising organic polymer molecules having carbon--carbon double bonds, for removing hydrogen from the atmosphere within enclosed spaces and particularly from atmospheres within enclosed spaces that contain air, water vapor, oxygen, carbon dioxide or ammonia. The organic polymers molecules containing carbon--carbon double bonds throughout their structures, preferably polybutadiene, polyisoprene and derivatives thereof, intimately mixed with an insoluble noble metal catalyst composition. High molecular weight polymers may be added to the organic polymer/catalyst mixture in order to improve their high temperature performance. The hydrogenation composition is prepared by dispersing the polymers in a suitable solvent, forming thereby a solution suspension, flash-freezing droplets of the solution in a liquid cryogen, freeze-drying the frozen droplets to remove frozen solvent incorporated in the droplets, and recovering the dried powder thus formed.

  17. A Real Attention-Getter

    NASA Technical Reports Server (NTRS)

    2003-01-01

    While most parents would agree that playing videos games is the antithesis of time well spent for their children, recent advances involving NASA biofeedback technology are proving otherwise. The same techniques used to measure brain activity in NASA pilots during flight simulation exercises are now a part of a revolutionary video game system that is helping to improve overall mental awareness for Americans of all ages, including those who suffer from Attention Deficit Hyperactivity Disorder (ADHD).

  18. Secondary electron yield measurements from thin surface coatings for NLC electron cloud reduction

    SciTech Connect

    Le Pimpec, F

    2004-05-17

    In the beam pipe of the positron damping ring of the Next Linear Collider, electrons will be created by beam interaction with the surrounding vacuum chamber wall and give rise to an electron cloud. Several solutions are possible for avoiding the electron cloud, without changing the beam bunch structure or the diameter of the vacuum chamber. Some of the currently available solutions for preventing this spurious electron load include reducing residual gas ionization by the beam, minimizing beam photon-induced electron production, and lowering the secondary electron yield (SEY) of the chamber wall. We will report on recent SEY measurements performed at SLAC on TiN coatings and TiZrV non-evaporable getter thin films.

  19. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  20. Film Credits

    ERIC Educational Resources Information Center

    Borja, Rhea R.

    2006-01-01

    With the advent of easy-to-use digital technology, schools are responding to the interests of their media-savvy students by offering more courses in filmmaking. In this article, the author features different films produced by students. Among other things, she discusses the students' growing interest in filmmaking.

  1. Black Films and Film-Makers.

    ERIC Educational Resources Information Center

    Patterson, Lindsay, Ed.

    The development of black films and the attitudes of the film industry toward black films and black actors are some of the topics examined in this anthology of essays. Section 1, "Nigger to Supernigger," contains such articles as "The Death of Rastus: Negroes in American Films" by Thomas R. Cripps and "Folk Values in a New Medium" by Alain Locke…

  2. Low-Temperature Solution Processing of Amorphous Metal Oxide Semiconductors for High-Performance Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hennek, Jonathan W.

    The growing field of large-area flexible electronics presents the need for amorphous materials with electrical performances superior to amorphous hydrogenated silicon (a-Si:H). Metal oxide semiconductors show great promise in thin film transistors (TFTs) due to their high electron mobility (micro, 1--100 cm2V-1s-1), mechanical flexibility, and electrical stability. However, most oxide semiconductor fabrication still relies on expensive, inflexible and energy intensive vacuum deposition methods. To overcome these limitations, my thesis work has focused on developing low-temperature solution processing routes to functional metal oxide materials. In Chapter 2, we demonstrate an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record micro of 2.5 cm 2V-1s-1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices. In Chapter 3, we report the implementation of amorphous indium yttrium oxide (a-IYO) as a TFT semiconductor for the first time. Amorphous and polycrystalline IYO films are grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films are analyzed by DTA, TGA, XRD, AFM, XPS, and optical transmission, revealing efficient conversion to the metal-oxide lattice, and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit impressive electron mobilities of 7.3 cm2V-1s-1 (Tanneal = 300 °C) and 5.0 cm2V-1s -1 (Tanneal = 250 °C) for 2

  3. Film and History.

    ERIC Educational Resources Information Center

    Schaber, Robin L.

    2002-01-01

    Provides an annotated bibliography of Web sites that focus on using film to teach history. Includes Web sites in five areas: (1) film and education; (2) history of cinema; (3) film and history resources; (4) film and women; and (5) film organizations. (CMK)

  4. Film: An Introduction.

    ERIC Educational Resources Information Center

    Fell, John L.

    "Understanding Film," the opening section of this book, discusses perceptions of and responses to film and the way in which experiences with and knowledge of other media affect film viewing. The second section, "Film Elements," analyzes the basic elements of film: the use of space and time, the impact of editing, sound and color, and the effects…

  5. An x-ray photoemission spectroscopy investigation of thermal activation induced changes in surface composition and chemical bonds of two gettering alloys: Zr sub 2 Fe versus Zr sub 57 V sub 36 Fe sub 7

    SciTech Connect

    Sancrotti, M.; Trezzi, G. ); Manini, P. )

    1991-03-01

    We report comparative XPS ({ital h}{nu}=1253.6 eV) core level (Zr 3{ital d}; C 1{ital s}; O 1{ital s}; Fe 2{ital p}; V 2{ital p}) results from two relevant gettering alloys: Zr{sub 2}Fe and Zr{sub 57}V{sub 36}Fe{sub 7}. The samples were studied as-received (after in-air fracturing of bulk ingots) and after different annealing treatments (up to 700 {degree}C) performed in ultrahigh vacuum. With increasing temperature both alloys show a progressive dissolution of Zr oxides, an increase in the metallic character of the surface, the gradual loss of C based adsorbates, and a progressive increase in the surface Zr content and at the expense of the C concentration. At temperatures in the range 300--550 {degree}C a fraction of the C atoms form metallic carbides. OH-based groups are depleted from the surface at low temperatures (200 {degree}C), resulting in a sizable decrease of the near surface O content, while a nearly constant O concentration is found at intermediate and high temperatures. Only minor changes are observed for the near surface concentrations of Fe in Zr{sub 2}Fe and Fe and V in Zr{sub 57}V{sub 36}Fe{sub 7} as a function of temperature. The two alloys show strong differences in the activation kinetics of these changes, with surface metallization being initiated at lower temperatures and proceeding faster in Zr{sub 57}V{sub 36}Fe{sub 7}. Metallic carbides are found to almost completely dissolve in Zr{sub 57}V{sub 36}Fe{sub 7} at 600--700 {degree}C, while they are retained even at high temperatures in Zr{sub 2}Fe. The kinetic differences determined via XPS are consistent with the differences in gettering behavior of Zr{sub 2}Fe and Zr{sub 57}V{sub 36}Fe{sub 7}.

  6. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  7. Contemporary Films' Mini Course on Film Study.

    ERIC Educational Resources Information Center

    Schillaci, Peter

    This minicourse on film study can be a unit in English, in arts, or in the humanities. It can help to launch a film study course or complement an introduction to theater. Whatever form it takes, it helps to build a bridge to the student's media environment. Part one, the language of images, utilizes four films which demonstrate the basic elements…

  8. [Films: China and Japan].

    ERIC Educational Resources Information Center

    Gumport, Roberta H.

    The history of filmmaking in China and Japan and film usage in teaching are considered in this document. Pointing out how films describe historical context and culture, the document also describes various techniques of film making. Films in China were heavily influenced by western models and have tended to be tools of the power structure, as…

  9. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  10. Hydrogen film cooling investigation

    NASA Technical Reports Server (NTRS)

    Rousar, D. C.; Ewen, R. L.

    1973-01-01

    Effects of flow turning, flow acceleration, and supersonic flow on film cooling were determined experimentally and correlated in terms of an entrainment film cooling model. Experiments were conducted using thin walled metal test sections, hot nitrogen mainstream gas, and ambient hydrogen or nitrogen as film coolants. The entrainment film cooling model relates film cooling effectiveness to the amount of mainstream gases entrained with the film coolant in a mixing layer. The experimental apparatus and the analytical model used are described in detail and correlations for the entrainment fraction and film coolant-to-wall heat transfer coefficient are presented.