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Sample records for nonequilibrium charge carriers

  1. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

    SciTech Connect

    Sizov, D. S. Zavarin, E. E.; Ledentsov, N. N.; Lundin, V. V.; Musikhin, Yu. G.; Sizov, V. S.; Suris, R. A.; Tsatsul'nikov, A. F.

    2007-05-15

    Electronic and optical properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region were studied theoretically and experimentally with the InGaN quantum dots as an example. It is shown that, depending on the activation energy, both the quasi-equilibrium statistic of charge carriers at the levels of quantum dots and nonequilibrium statistic at room temperature are possible. In the latter case, the position of the maximum in the emission spectrum is governed by the value of the demarcation transition: the quantum dots with the transition energy higher than this value feature the quasi-equilibrium population of charge carriers, while the quantum dots with the transition energy lower than the demarcation-transition energy feature the nonequilibrium population. A model based on kinetic equations was used in the theoretical analysis. The key parameters determining the statistic are the parameters of thermal ejection of charge carriers; these parameters depend exponentially on the activation energy. It is shown experimentally that the use of stimulated phase decomposition makes it possible to appreciably increase the activation energy. In this case, the thermal-activation time is found to be much longer than the recombination time for an electron-hole pair, which suppresses the redistribution of charge carriers between the quantum dots and gives rise to the nonequilibrium population. The effect of nonequilibrium population on the luminescent properties of the structures with quantum dots is studied in detail.

  2. Mechanisms of recombination of nonequilibrium charge carriers in epitaxial Cd{sub x}Hg{sub 1-x}Te (x = 0.20-0.23) layers

    SciTech Connect

    Ikusov, D. G.; Sizov, F. F.; Staryi, S. V. Teterkin, V. V.

    2007-02-15

    The experimental temperature dependences of the photosensitivity and the data on the lifetime of nonequilibrium charge carriers in epitaxial Cd{sub x}Hg{sub 1-x}Te layers with x = 0.20-0.23 were used to show that, in the region of intrinsic and extrinsic conductivity in n-type films grown by molecular beam epitaxy, CHCC Auger recombination is the prevailing recombination mechanism. At the same time, in p-type films grown by liquid-or vapor-phase epitaxy, it is observed that, in the region of extrinsic conductivity, CHLH Auger recombination competes with Shockley-Read recombination. The n-type films grown by molecular beam epitaxy contain a much lower concentration of recombination centers than the p-type films grown by liquid-or gasphase epitaxy.

  3. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

    SciTech Connect

    Pastor, A. A.; Prokhorova, U. V.; Serdobintsev, P. Yu.; Chaldyshev, V. V. Yagovkina, M. A.

    2013-08-15

    GaAs samples grown by molecular-beam epitaxy at low (230 Degree-Sign C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600 Degree-Sign C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 {+-} 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly As{sub Ga} antisite defects. According to X-ray diffraction and steady-state optical absorption data, the As{sub Ga} concentration in the samples is 3 Multiplication-Sign 10{sup 19} cm{sup -3}, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600 Degree-Sign C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 {+-} 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions.

  4. Non-equilibrium hot carrier dynamics in plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Narang, Prineha; Sundararaman, Ravishankar; Jermyn, Adam; Cortes, Emiliano; Maier, Stefan A.; Goddard, William A., III

    Decay of surface plasmons to hot carriers is a new direction that has attracted considerable fundamental and application interest, yet a fundamental understanding of ultrafast plasmon decay processes and the underlying microscopic mechanisms remain incomplete. Ultrafast experiments provide insights into the relaxation of non-equilibrium carriers at the tens and hundreds of femtoseconds time scales, but do not yet directly probe shorter times with nanometer spatial resolution. Here we report the first ab initio calculations of non equilibrium transport of plasmonic hot carriers in metals and experimental observation of the injection of these carriers into molecules tethered to the metal surface. Specifically, metallic nanoantennas functionalized with a molecular monolayer allow for the direct probing of electron injection via surface enhanced Raman spectroscopy of the original and reduced molecular species. We combine first principles calculations of electron-electron and electron-phonon scattering rates with Boltzmann transport simulations to predict the ultrafast dynamics and transport of carriers in real materials. We also predict and compare the evolution of electron distributions in ultrafast experiments on noble metal nanoparticles.

  5. Calculations of heavy ion charge state distributions for nonequilibrium conditions

    NASA Technical Reports Server (NTRS)

    Luhn, A.; Hovestadt, D.

    1985-01-01

    Numerical calculations of the charge state distributions of test ions in a hot plasma under nonequilibrium conditions are presented. The mean ionic charges of heavy ions for finite residence times in an instantaneously heated plasma and for a non-Maxwellian electron distribution function are derived. The results are compared with measurements of the charge states of solar energetic particles, and it is found that neither of the two simple cases considered can explain the observations.

  6. Preface: Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

    NASA Astrophysics Data System (ADS)

    Reggiani, L.; Bordone, P.; Brunetti, R.

    2004-02-01

    The International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) celebrates 30 years since it first took place in Modena. Nonequilibrium dynamics of charge carriers, pioneered by the hot-electron concept, is an important issue for understanding electro-optic transport properties in semiconductor materials and structures. In these 30 years several topics have matured, and new ones have emerged thus fertilizing the field with a variety of physical problems and new ideas. The history of the conference is summarized in the opening paper `30 years of HCIS'. The future of the conference seems secure considering the continued lively interest of the participants. The conference addressed eleven major topics which constitute the backbone of the proceedings and are summarized as follows: carrier transport in low dimensional and nanostructure systems, nonequilibrium carriers in superlattices and devices, small devices and related phenomena, carrier dynamics and fluctuations, carrier quantum dynamics, coherent/incoherent carrier dynamics of optical excitations and ultra-fast optical phenomena, nonlinear optical effects, transport in organic matter, semiconductor-based spintronics, coherent dynamics in solid state systems for quantum processing and communication, novel materials and devices. Nanometric space scale and femtosecond time scale represent the ultimate domains of theoretical, experimental and practical interest. Traditional fields such as bulk properties, quantum transport, fluctuations and chaotic phenomena, etc, have received thorough and continuous attention. Emerging fields from previous conferences, such as quantum processing and communication, have been better assessed. New fields, such as spintronics and electron transport in organic matter, have appeared for the first time. One plenary talk, 11 invited talks, 230 submitted abstracts covering all these topics constituted a single-session conference. Following scientific selection

  7. Time-resolved nonlinear optical-holographic techniques for investigation of non-equilibrium carrier dynamics in semiconductors

    NASA Astrophysics Data System (ADS)

    Jarašiūnas, Kestutis

    2011-02-01

    A novel metrological approach bridges a dynamic holography and photoelectrical phenomena in semiconductors for monitoring the temporal and spatial non-equilibrium carrier dynamics. Light interference pattern of two coherent picosecond pulses was used to inject spatially modulated carrier pattern, modulate temporally the complex refractive index of a semiconductor, and thus create a light-induced transient diffraction grating (LITG). Recording of a thin grating at interband carrier generation with subsequent probing of spatial and temporal carrier dynamics by a delayed probe beam allowed investigation of various recombination mechanisms, covering linear, surface-limited, and nonlinear (bimolecular and Auger). Decay of LITG at its various spacings provided either the bipolar carrier mobility or minority one in heavily doped layers, diffusivity of degenerate plasma, as well revealed impact of carrier localization and band gap renormalization on carrier transport. Diffraction on thick Bragg gratings, recorded via deep impurity-assisted carrier generation revealed simultaneous index modulation by free-carriers, space-charge electric field, and recharged deep traps, thus enabling access to photoelectric parameters of the compensating centers. Grating decay in multiple quantum well structures (MQWS) provided carrier and spin relaxation rates, electron mobility, in-plane and cross-well transport. Spatial and temporal carrier dynamics in a wide excitation and temperature range is reviewed in a variety of III-nitride compounds (GaN, InGaN, AlGaN), GaAs, CdTe, InP, SiC, diamond films, and MQWS.

  8. Ultrafast Lateral Photo-Dember Effect in Graphene Induced by Nonequilibrium Hot Carrier Dynamics.

    PubMed

    Liu, Chang-Hua; Chang, You-Chia; Lee, Seunghyun; Zhang, Yaozhong; Zhang, Yafei; Norris, Theodore B; Zhong, Zhaohui

    2015-06-10

    The photo-Dember effect arises from the asymmetric diffusivity of photoexcited electrons and holes, which creates a transient spatial charge distribution and hence the buildup of a voltage. Conventionally, a strong photo-Dember effect is only observed in semiconductors with a large asymmetry between the electron and hole mobilities, such as in GaAs or InAs, and is considered negligible in graphene due to its electron-hole symmetry. Here, we report the observation of a strong lateral photo-Dember effect induced by nonequilibrium hot carrier dynamics when exciting a graphene-metal interface with a femtosecond laser. Scanning photocurrent measurements reveal the extraction of photoexcited hot carriers is driven by the transient photo-Dember field, and the polarity of the photocurrent is determined by the device's mobility asymmetry. Furthermore, ultrafast pump-probe measurements indicate the magnitude of photocurrent is related to the hot carrier cooling rate. Our simulations also suggest that the lateral photo-Dember effect originates from graphene's 2D nature combined with its unique electrical and optical properties. Taken together, these results not only reveal a new ultrafast photocurrent generation mechanism in graphene but also suggest new types of terahertz sources based on 2D nanomaterials. PMID:25993273

  9. Transient Features in Charge Fractionalization and Non-equilibrium Bosonization

    NASA Astrophysics Data System (ADS)

    Rosenow, Bernd; Schneider, Alexander; Milletari, Mirco

    2015-03-01

    In quantum Hall edge states and in other one-dimensional interacting systems, charge fractionalization can occur due to the fact that an injected charge pulse decomposes into eigenmodes propagating at different velocities. If the original charge pulse has some spatial width due to injection with a given source-drain voltage, a finite time is needed until the separation between the fractionalized pulses is larger than their width. In the formalism of non-equilibrium bosonization, the above physics is reflected in the separation of initially overlapping square pulses in the effective scattering phase. When expressing the single particle Green function as a functional determinant of counting operators containing the scattering phase, the time evolution of charge fractionalization is mathematically described by functional determinants with overlapping pulses. We develop a framework for the evaluation of such determinants, and compare our theoretical results with recent experimental findings. Supported by DFG Grant RO 2247/8-1.

  10. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    PubMed

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  11. Incoherent control of topological charges in nonequilibrium polariton condensates

    NASA Astrophysics Data System (ADS)

    Ma, Xuekai; Peschel, Ulf; Egorov, Oleg A.

    2016-01-01

    We study stability and switching dynamics of topological dislocations forming in a nonequilibrium polariton condensate sustained by an incoherent ring-shaped optical pump. In particular, we report on an elegant method for creation of vortices with predefined angular momenta by means of a purely incoherent (off-resonant) elliptically-shaped control beam. The control beam breaks the radiale symmetry of the system and induces chirality required for a topological charge transfer with a predefined sign. Numerical analysis encloses the optimal parameters for an effective switching between states with opposite orbital angular momenta.

  12. Nonequilibrium work by charge control in a Josephson junction.

    PubMed

    Yi, Su Do; Kim, Beom Jun; Yi, Juyeon

    2013-08-01

    We consider a single Josephson junction in the presence of time varying gate charge, and examine the nonequilibrium work done by the charge control in the framework of fluctuation theorems. Assuming first a high quality junction with negligible Ohmic current, we obtain the probability distribution functions of the work and confirm the Crooks relation to give the estimation of the free energy changes ΔF=0. The reliability of ΔF estimated from the Jarzynksi equality is crucially dependent on protocol parameters, while the Bennett's acceptance ratio method yields consistently ΔF=0. We examine the behaviors of the work average and point out its relation to heat and entropy production associated with the circuit control. Finally considering finite tunnel resistance we discuss dissipation effects on the work statistics. PMID:24032811

  13. Nonequilibrium carrier dynamics in transition metal dichalcogenide semiconductors

    NASA Astrophysics Data System (ADS)

    Steinhoff, A.; Florian, M.; Rösner, M.; Lorke, M.; Wehling, T. O.; Gies, C.; Jahnke, F.

    2016-09-01

    When exploring new materials for their potential in (opto)electronic device applications, it is important to understand the role of various carrier interaction and scattering processes. In atomically thin transition metal dichalcogenide semiconductors, the Coulomb interaction is known to be much stronger than in quantum wells of conventional semiconductors like GaAs, as witnessed by the 50 times larger exciton binding energy. The question arises, whether this directly translates into equivalently faster carrier–carrier Coulomb scattering of excited carriers. Here we show that a combination of ab initio band-structure and many-body theory predicts Coulomb-mediated carrier relaxation on a sub-100 fs time scale for a wide range of excitation densities, which is less than an order of magnitude faster than in quantum wells.

  14. Solid state cloaking for electrical charge carrier mobility control

    DOEpatents

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  15. Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene

    NASA Astrophysics Data System (ADS)

    Hamm, J. M.; Page, A. F.; Bravo-Abad, J.; Garcia-Vidal, F. J.; Hess, O.

    2016-01-01

    The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast time scales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed femtosecond lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.

  16. Localized charge carriers in graphene nanodevices

    NASA Astrophysics Data System (ADS)

    Bischoff, D.; Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K.

    2015-09-01

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called "nanoribbons" show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  17. Localized charge carriers in graphene nanodevices

    SciTech Connect

    Bischoff, D. Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K.

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  18. Charge-Carrier-Scattering Spectroscopy With BEEM

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, Lloyd D.; Kaiser, William J.

    1992-01-01

    Ballistic-electron-emission microscopy (BEEM) constitutes basis of new spectroscopy of scattering of electrons and holes. Pointed tip electrode scans near surface of metal about 100 angstrom thick on semiconductor. Principle similar to scanning tunneling microscope, except metal acts as third electrode. Used to investigate transport phenomena, scattering phenomena, and creation of hot charge carriers in Au/Si and Au/GaAs metal/semiconductor microstructures.

  19. Nonequilibrium carrier dynamics in ultrathin Si-on-glass films

    NASA Astrophysics Data System (ADS)

    Serafini, J.; Akbas, Y.; Crandall, L.; Bellman, R.; Kosik Williams, C.; Sobolewski, Roman

    2015-10-01

    We present a femtosecond pump-probe spectroscopy approach for characterization of amorphous and microcrystalline silicon films grown on glass substrates. Such films are presently being considered as absorbers in tandem-type, Si-based photovoltaic cells. Our experiments consisted of time-resolved, two-colour femtosecond optical measurements, performed in the transmission mode in a wide range of delay times. Depending on the sample growth process, collected normalized transmissivity change (ΔT/T) waveforms exhibited a bi-exponential relaxation dynamics with the characteristic times varying from picoseconds to nanoseconds. Experimental data were interpreted using a three-rate-equation models, and the relaxation was identified as, depending on the Si film type, being dominated by either carrier trapping or electron-phonon cooling and followed by electron-hole recombination. An excellent fit between the model and the ΔT/T transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

  20. Diffusivity and mobility of non-equilibrium carriers in organic semiconductors: Existence of critical field determining temperature dependence

    NASA Astrophysics Data System (ADS)

    Tripathi, Durgesh C.; Sinha, Dhirendra K.; Mohapatra, Y. N.

    2013-10-01

    The role of disorder in controlling diffusivity and mobility of charge-carriers in the hopping regime of transport within a potential landscape has become especially significant for organic semiconductors. The temperature and field dependence of diffusivity (D) and mobility (μ) of injected charge-carriers have been simultaneously measured using electroluminescence transients for representative organic thin-films of tris(8-hydroxyquinoline) aluminum (III) (Alq3) and poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO). Significantly, the field dependence of diffusivity at different temperatures is similar except for a shift of a critical field beyond which it shows a sharp increase. The critical field is shown to be linearly decreasing with temperature ultimately vanishing at a characteristic limit T∗, and the slope is a measure of the localization length. The normalization of diffusivity is used to demonstrate the role of field in controlling temperature dependence. The scheme has been used to neatly decouple contributions from energetic (diagonal) and positional (off-diagonal) disorder thus enabling independent experimental determination of all the parameters of standard and correlated versions of Gaussian disorder model. The results demonstrate the validity of Gaussian disorder model even for non-equilibrium carriers, and that the parameters can be obtained with appropriate scaling of the field in such cases.

  1. Influence of non-equilibrium carrier dynamics on pulse amplification in semiconductor gain media

    NASA Astrophysics Data System (ADS)

    Böttge, C. N.; Hader, J.; Kilen, I.; Koch, S. W.; Moloney, J. V.

    2015-03-01

    The influence of non-equilibrium carrier dynamics on pulse propagation through inverted semiconductor gain media is investigated. For this purpose, a fully microscopic many-body model is coupled to a Maxwell solver, allowing for a self-consistent investigation of the light-matter-coupling and carrier dynamics, the optical response of the laser and absorber in the multiple-quantum-well medium, and the modification of the light field through the resulting optical polarization. The influence of the intra-pulse dynamics on the magnitude and spectral dependence of pulse amplification for single pulses passing through inverted quantum-well media is identified. In this connection, the pulse-induced non-equilibrium deviations of the carrier distributions, the kinetic-hole filling kinetics in the gain medium, and the saturable-absorber-relaxation dynamics are scrutinized. While pulses shorter than about 100 fs are found to be rather unaffected by the carrier-relaxation dynamics, the pump-related dynamics become prominent for pulses in the multi-picosecond range leading to significant amplification.

  2. Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si{sub 1−x}Ge{sub x}/Si structures

    SciTech Connect

    Bagaev, V. S.; Krivobok, V. S. Nikolaev, S. N.; Onishchenko, E. E.; Pruchkina, A. A.; Aminev, D. F.; Skorikov, M. L.; Lobanov, D. N.; Novikov, A. V.

    2013-11-15

    The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si{sub 1−x}Ge{sub x}/Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si{sub 1−x}Ge{sub x} layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T{sup +} and biexcitons, in the exciton gas.

  3. The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors

    SciTech Connect

    Konin, A.

    2011-05-15

    A theory of the thermopower is developed with consideration for the nonequilibrium charge produced in a p-type semiconductor and metal contacts. It is shown that the thermopower is generated due to redistribution of the nonequilibrium charge between the metal contacts and semiconductor via transport of nonequilibrium electrons from the metal to the semiconductor through one of the surfaces and from the semiconductor to the metal through the other surface. In a p-type semiconductor sample with thickness smaller than the diffusion length, at certain surface parameters, the thermopower nonlinearly depends on the temperature difference.

  4. Non-equilibrium photoexcited carrier effects in a graphene-based Josephson junction

    NASA Astrophysics Data System (ADS)

    Tsumura, Kohei; Furukawa, Naoki; Ito, Hironori; Watanabe, Eiichiro; Tsuya, Daiju; Takayanagi, Hideaki

    2016-01-01

    We studied the superconducting proximity effect under photoexcitation by illuminating a superconductor/monolayer graphene/superconductor (SGS) Josephson junction with monochromatic light at a wavelength of 1.31 μm. Although the critical current Ic can be controlled by the irradiation power P, its variation cannot be explained by modification of the carrier density, which has been reported for semiconductor-based Josephson junctions. The estimated electron temperature of graphene is proportional to P δ , where δ ≃ 1 / 3 . This relation clearly indicates that photogenerated non-equilibrium carrier dynamics are responsible for the variation of Ic with P. We suggest that the SGS junction can directly mediate interactions between the optical field and the superconducting state.

  5. Charge carrier mobility in hybrid halide perovskites

    PubMed Central

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-01-01

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5–10 cm2V−1s−1 and that for holes within 1–5 cm2V−1s−1, where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials. PMID:26235910

  6. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    SciTech Connect

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  7. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Serafini, John; Akbas, Yunus; Crandall, Lucas; Bellman, Robert; Kosik Williams, Carlo; Sobolewski, Roman

    2016-04-01

    A femtosecond pump-probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ˜300-500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron-phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley-Read-Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

  8. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    DOE PAGESBeta

    Serafini, John; Akbas, Yunus; Crandall, Lucas; Bellman, Robert; Williams, Carlo Kosik; Sobolewski, Robert

    2016-03-02

    Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping;more » while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.« less

  9. The non-equilibrium charge screening effects in diffusion-driven systems with pattern formation

    NASA Astrophysics Data System (ADS)

    Kuzovkov, V. N.; Kotomin, E. A.; de la Cruz, M. Olvera

    2011-07-01

    The effects of non-equilibrium charge screening in mixtures of oppositely charged interacting molecules on surfaces are analyzed in a closed system. The dynamics of charge screening and the strong deviation from the standard Debye-Hückel theory are demonstrated via a new formalism based on computing radial distribution functions suited for analyzing both short-range and long-range spacial ordering effects. At long distances the inhomogeneous molecular distribution is limited by diffusion, whereas at short distances (of the order of several coordination spheres) by a balance of short-range (Lennard-Jones) and long-range (Coulomb) interactions. The non-equilibrium charge screening effects in transient pattern formation are further quantified. It is demonstrated that the use of screened potentials, in the spirit of the Debye-Hückel theory, leads to qualitatively incorrect results.

  10. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  11. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  12. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  13. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  14. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  15. On the nature of photo charge carriers in ice

    NASA Astrophysics Data System (ADS)

    Petrenko, V. F.; Khusnatdinov, N. N.

    1994-06-01

    A method of photoelectromotive force (PEMF) was developed to find the charge sign, mobility, and lifetime of photo charge carriers in ice generated by photons with energy hν≳6.5 eV. It was determined that the most mobile photo charge carriers are negative ones, with mobility μ increasing from 2×10-3 cm2/V s at T=-10 °C to 4×10-2 cm2/V s at T=-30 °C, and with their lifetime decreasing from 30 to 10 s in the same temperature range. Activation energies of the mobility and the lifetime are Eμ=-0.77 eV and Eτ=0.32 eV, respectively. In addition to the negative photo charge carriers positive ones arise with mobility μ=2.3×10-4 cm2/V s and lifetime τ=26 min at T=-15 °C. We suggest that the negative photo charge carriers in ice are mobile complexes of an electron, vacancy and D-defect (e-+V+D). To take into account a specific mechanism of charge transport in ice, configurational vector Ω, and the generation of complexes (e-+V+D), a reaction of ``autoionization'' was modified for ice, 2H2O+hν→H3O++OH•int(e-+V+D).

  16. Photogeneration of charge carriers in titanium oxides

    NASA Astrophysics Data System (ADS)

    Itoh, Chihiro; Iwahashi, Kuniaki; Kan'no, Ken-ichi

    2002-05-01

    We have measured action spectra of the photoconductivity of rutile crystal at ˜4 K. The photoconductivity spectrum shows a keen rise at 3.0 eV and shows a peak at 3.2 eV and a shoulder around 3.7 eV. The threshold energy of the photoconductivity excitation well agrees with the onset of the fundamental optical absorption. This result indicates that the carriers contributing to the photoconductivity are generated by the fundamental excitation of the crystal. We have found that the photoconductivity shows remarkable field dependence. Below 5 V/mm, the photoconductivity was almost field independent. On the other hand, increasing the field strength in the range from 5 to 25 V/mm strongly enhanced the photoconductivity and varied the shape of the action spectrum. The origin of the field dependence is discussed.

  17. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  18. Charge carrier coherence and Hall effect in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  19. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  20. Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions

    SciTech Connect

    Wendelen, W.; Bogaerts, A.; Mueller, B. Y.; Rethfeld, B.; Autrique, D.

    2012-06-01

    A theoretical study has been conducted of ultrashort pulsed laser induced electron emission from an aluminum surface. Electron emission fluxes retrieved from the commonly employed Fowler-DuBridge theory were compared to fluxes based on a laser-induced non-equilibrium electron distribution. As a result, the two- and three-photon photoelectron emission parameters for the Fowler-DuBridge theory have been approximated. We observe that at regimes where photoemission is important, laser-induced electron emission evolves in a more smooth manner than predicted by the Fowler-DuBridge theory. The importance of the actual electron distribution decreases at higher laser fluences, whereas the contribution of thermionic emission increases. Furthermore, the influence of a space charge effect on electron emission was evaluated by a one dimensional particle-in-cell model. Depending on the fluences, the space charge reduces the electron emission by several orders of magnitude. The influence of the electron emission flux profiles on the effective electron emission was found to be negligible. However, a non-equilibrium electron velocity distribution increases the effective electron emission significantly. Our results show that it is essential to consider the non-equilibrium electron distribution as well as the space charge effect for the description of laser-induced photoemission.

  1. The Influence of Trapped Ions and Non-equilibrium EDF on Dust Particle Charging

    SciTech Connect

    Sukhinin, G. I.; Fedoseev, A. V.; Antipov, S. N.; Petrov, O. F.; Fortov, V. E.

    2008-09-07

    Dust particles charging in a low-pressure glow discharge was investigated theoretically with the help of model for trapped and free ions coupled with the self-consistent solution of Poisson equation for electric potential. Non-equilibrium (non-Maxwellian) character of electron energy distribution function depending on gas pressure and electric field was also taken into account on the basis of the solution of kinetic Boltzmann equation. The results were compared with the experimental measurements of dust particle charge depending on gas pressure. It was shown that the calculated effective charge, i.e. the difference of the dust particle charge and trapped ion charge, is in a fairly good agreement with the experimental data.

  2. Determining charge carrier mobility in Schottky contacted single-carrier organic devices by impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Tang, Ying; Peng, Yingquan; Sun, Lei; Wei, Yi; Xu, Sunan

    2015-10-01

    Impedance spectroscopy (IS) is one of the most important methods for analyzing transport properties of semiconducting thin films. At present carrier mobility can be determined by IS methods only for Ohmic contacted single-carrier devices, which hinders the use of the IS method for determining the carrier mobility of thin films with high-lying lowest unoccupied molecular orbits or low-lying highest occupied molecular orbits. Based on the theory of space charge limited current conduction and thermionic emission at metal-organic interface, we developed a numerical IS model for single-carrier organic devices with Schottky injection contact. With the help of this model, a concise empirical formula is obtained from which the carrier mobility can be determined from the characteristic frequency of the negative differential susceptance and the Schottky energy barrier height at the injection contact.

  3. Shielding of a Moving Charged Dust Particle in the Nonequilibrium Plasma

    SciTech Connect

    Filippov, A. V.; Pal, A. F.; Starostin, A. N.; Momot, A. I.; Zagorodny, A. G.

    2008-09-07

    Study of shielding of a moving charged dust particle in the nonequilibrium plasma was performed. It is known that in the collisionless so-called Vlasov plasma the electric field of a slowly moving charged particle at high distances corresponds to quadrupole [1, 2, 3]. It was found that in the collisional plasma the electric field of a moving dust particle had the dipole component and the long distance behavior of the electric fields was defined by this component. Therefore the interaction of dust particles in plasma flow became dependent on the relative orientation of the interpaticle radius-vector and the flow velocity vector.

  4. Light pulse propagation and charge carrier scattering in semiconductor amplifiers

    SciTech Connect

    Binder, R.; Knorr, A.; Koch, S.W.

    1994-12-31

    The carrier dynamics in inverted semiconductors (optical amplifiers) and light pulse propagations in optical amplifiers have been studied extensively both theoretically and experimentally. Light induced carrier heating processes, which are caused, for example, by two-photon absorption and free carrier absorption, have been studied mainly on the basis of phenomenological models. The full microscopic theory of these processes and their influence on light pulse propagation is still an unsolved problem. Here, the authors present theoretical results on light pulse propagation in inverted semiconductors and semiconductor laser diodes. The theory is based on the semiconductor Maxwell Bloch equations and includes incoherent phenomena due to charge-carrier scattering based on the solution of the appropriate Boltzman equation.

  5. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility.

    PubMed

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters. PMID:19044876

  6. High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

    PubMed Central

    Sandeep, C. S. Suchand; Cate, Sybren ten; Schins, Juleon M.; Savenije, Tom J.; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J.; Siebbeles, Laurens D. A.

    2013-01-01

    Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm2 V−1 s−1, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots. PMID:23974282

  7. Identification of the Charge Carriers in Cerium Phosphate Ceramics

    SciTech Connect

    Ray, Hannah L.; Jonghe, Lutgard C. De

    2010-06-02

    The total conductivity of Sr-doped cerium orthophosphate changes by nearly two orders of magnitude depending on the oxygen and hydrogen content of the atmosphere. The defect model for the system suggests that this is because the identity of the dominant charge carrier can change from electron holes to protons when the sample is in equilibrium with air vs. humidified hydrogen. In this work are presented some preliminary measurements that can help to clarify this exchange between carriers. The conduction behavior of a 2percent Sr-doped CePO4 sample under symmetric atmospheric conditions is investigated using several techniques, including AC impedance, H/D isotope effects, and chronoamperometry.

  8. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

    PubMed

    Zhang, Yingjie; Chen, Qian; Alivisatos, A Paul; Salmeron, Miquel

    2015-07-01

    Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step function changes of gate bias. The measurements reveal an exponential decay of mobile carrier density with time constants of 3-5 s for holes and ∼10 s for electrons. An Ohmic behavior, with uniform carrier density, was observed along the channel during the injection and transport processes. These slow, uniform carrier trapping processes are reversible, with time constants that depend critically on the gas environment. We propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species. These trapping processes are dynamically activated by the injected charges, in contrast with static electronic traps whose presence is independent of the charge state. Understanding and controlling these processes is important for improving the performance of electronic, optoelectronic, and memory devices based on disordered semiconductors. PMID:26099508

  9. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    NASA Technical Reports Server (NTRS)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  10. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    PubMed Central

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-01-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level. PMID:27040365

  11. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    NASA Astrophysics Data System (ADS)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  12. Non-equilibrium energy loss for very highly charged ions in insulators

    SciTech Connect

    Briere, M.A.; Schenkel, T.; Bauer, P.; Amau, A.

    1996-12-31

    The energy loss of 144 keV Ar{sup +16} ions on a bilayer structure of C-CaF{sub 2} has been measured. An asymmetry in the results is found depending on which layer is passed by the ion first: the energy loss is about four times larger when the CaF{sub 2} layer is traversed by the ion first. We interpret this as an indication of the existence of a nonequilibrium charge state of the Ar ions inside the solid in the case of the insulator.

  13. Charge carrier recombination dynamics in perovskite and polymer solar cells

    NASA Astrophysics Data System (ADS)

    Paulke, Andreas; Stranks, Samuel D.; Kniepert, Juliane; Kurpiers, Jona; Wolff, Christian M.; Schön, Natalie; Snaith, Henry J.; Brenner, Thomas J. K.; Neher, Dieter

    2016-03-01

    Time-delayed collection field experiments are applied to planar organometal halide perovskite (CH3NH3PbI3) based solar cells to investigate charge carrier recombination in a fully working solar cell at the nanosecond to microsecond time scale. Recombination of mobile (extractable) charges is shown to follow second-order recombination dynamics for all fluences and time scales tested. Most importantly, the bimolecular recombination coefficient is found to be time-dependent, with an initial value of ca. 10-9 cm3/s and a progressive reduction within the first tens of nanoseconds. Comparison to the prototypical organic bulk heterojunction device PTB7:PC71BM yields important differences with regard to the mechanism and time scale of free carrier recombination.

  14. Giant Reduction of Charge Carrier Mobility in Strained Graphene

    NASA Astrophysics Data System (ADS)

    Shah, Raheel; Mohiuddin, Tariq M. G.; Singh, Ram N.

    2013-01-01

    Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. The unsymmetrical hopping parameters between nearest neighbor atoms which emanate from induced strain are included in the density of states description. Mobility is then computed within the Born approximation by including three scattering mechanisms; charged impurity, surface roughness and lattice phonons interaction. Unlike its strained silicon counterpart, simulations reveal a significant drop in mobility for graphene with increasing strain. Additionally, mobility anisotropy is observed along the zigzag and armchair orientations. The prime reason for the drop in mobility can be attributed to the change in Fermi velocity due to strain induced distortions in the graphene honeycomb lattice.

  15. Analysis of Charge Carrier Transport in Organic Photovoltaic Active Layers

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2015-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological, deterministic charge carrier transport models. The models describe free electron and hole transport, trapping, and detrapping, as well as geminate charge-pair dissociation and geminate and bimolecular recombination, self-consistently with Poisson's equation for the electric field in the active layer. We predict photocurrent evolution in devices with active layers of P3HT, P3HT/PMMA, and P3HT/PS, as well as P3HT/PCBM blends, and photocurrent-voltage (I-V) relations in these devices at steady state. Charge generation propensity, zero-field charge mobilities, and trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental measurements. We have analyzed effects of the active layer morphology for layers consisting of both pristine drop-cast films and of nanoparticle (NP) assemblies, as well as effects on device performance of insulating NP doping in conducting polymers and of specially designed interlayers placed between an electrode and the active layer. The model predictions provide valuable input toward synthesis of active layers with prescribed morphology that optimize OPV device performance.

  16. Spontaneous Charge Carrier Localization in Extended One-Dimensional Systems

    NASA Astrophysics Data System (ADS)

    Vlček, Vojtěch; Eisenberg, Helen R.; Steinle-Neumann, Gerd; Neuhauser, Daniel; Rabani, Eran; Baer, Roi

    2016-05-01

    Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects, or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally tuned range-separated density functional theory and many-body perturbation calculations within the G W approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies, and the optimally tuned range parameter itself all become independent of polymer length as it exceeds the critical localization length. Moreover, we find that lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.

  17. Dispersive transport of charge carriers in disordered nanostructured materials

    NASA Astrophysics Data System (ADS)

    Sibatov, R. T.; Uchaikin, V. V.

    2015-07-01

    Dispersive transport of charge carriers in disordered nanostructured semiconductors is described in terms of integral diffusion equations nonlocal in time. Transient photocurrent kinetics is analyzed for different situations. Relation to the fractional differential approach is demonstrated. Using this relation provides specifications in interpretation of the time-of-flight data. Joint influence of morphology and energy distribution of localized states is described in frames of the trap-limited advection-diffusion on a comb structure modeling a percolation cluster.

  18. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGESBeta

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  19. Morphology and charge carrier transport in eumelanin thin films

    NASA Astrophysics Data System (ADS)

    Santato, Clara; Wuensche, Julia; Rosei, Federico

    2012-02-01

    Eumelanin is a biomolecule with important functions in the human body, animals, and plants. However, several fundamental properties of eumelanin, such as the mechanism of charge carrier transport and the supramolecular structure, are still a matter of debate. This work is the first step of a study with the long-term goal to characterize structure and charge carrier transport of eumelanin in thin film form. We compared the most common synthesis routes and processing solvents for eumelanin observing the morphology (AFM) and chemical composition (XPS) of the prepared films. Eumelanin synthesized from tyrosine by oxidation with H2O2 and deposited from dimethyl sulfoxide yielded films with a RMS roughness below 0.4 nm and an elementary composition in agreement with the eumelanin building blocks suggested in literature. A more detailed AFM study revealed a layer-by-layer growth mode for solution-processed eumelanin films. The first electrical characterization of these films in a planar two-electrode configuration and a high-humidity environment demonstrated the high complexity of charge transport in eumelanin films. The planar device geometry permits imaging the changes in the optical or morphological properties of the eumelanin film by optical microscopy and AFM. Our measurements suggest that several processes, including electrochromism and electropolymerization, contribute to determine the electroactivity of eumelanin films, depending on the applied electrical bias. Current transients over several hours support the hypothesis that ions are involved in charge transport.

  20. Dynamics of charge carriers on hexagonal nanoribbons with vacancy defects

    NASA Astrophysics Data System (ADS)

    Ferreira da Cunha, Wiliam; de Oliveira Neto, Pedro Henrique; Terai, Akira; Magela e Silva, Geraldo

    2016-07-01

    We develop a general model to investigate the dynamics of charge carriers in vacancy endowed honeycomb two-dimensional nanolattices. As a fundamental application, results concerning the influence of vacancies placed on different sites of semiconducting armchair graphene nanoribbons (AGNR) over the transport of polarons are presented. It is observed that the positioning of vacancies plays a major role over the scattering of the charge carriers, in the sense that their overall mobility is determined by where the defect is allocated. By considering different structural configurations of the system, the arising polaron can either move freely or be reflected. Therefore, our work provides a phenomenological understanding of the underlying mechanism responsible for the change of conductivity experienced by systems in which structural defects are present, a fact that has been reported for different nanostructures of the same symmetry. Because vacancies are one of the most common kinds of defects and are, in practice, unavoidable, the kind of description proposed in the present paper is crucial to correctly address transport and electronic properties in more realistic electronic devices based on two-dimensional nanolattices.

  1. Polaron mass of charge carriers in semiconductor quantum wells

    SciTech Connect

    Maslov, A. Yu. Proshina, O. V.

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  2. Measurement of the Charge Carrier Mobility Distribution in Bulk Heterojunction Solar Cells.

    PubMed

    Seifter, Jason; Sun, Yanming; Choi, Hyosung; Lee, Byoung Hoon; Nguyen, Thanh Luan; Woo, Han Young; Heeger, Alan J

    2015-09-01

    Charge carrier transport through organic solar cells is fundamentally dispersive due to the disordered structure and complex film morphology within the photoactive layer. A novel application of transient photocurrent and short-circuit variable time-delayed collection field measurements is used to reconstruct the complete charge carrier mobility distribution for the photogenerated carriers in optimized organic solar cells. PMID:26199190

  3. Charge carrier rearrangement in spinel crystals irradiated at low temperatures

    NASA Astrophysics Data System (ADS)

    Gritsyna, V. T.; Afanasyev-Charkin, I. V.; Kobyakov, V. A.; Voitsenya, T. I.; Sickafus, K. E.

    2000-05-01

    The results of an investigation of thermoluminescence (TL) in nominally pure MgAl2O4 spinel single crystals in the temperature range between 80-670 K are presented. For a heating rate of 0.21 K/s, TL spectra exhibit glow peaks in three distinct temperature ranges: 100-160, 270-370 and 470-670 K. The most prominent peaks are at 115, 140, 305, 335, 525, 570 and 605 K. The locations of the temperature maxima, as well as the intensity of the peaks, vary depending on the treatment of the crystals, the type of irradiation and the temperature of irradiation. Measurements of the glow peaks at different emission wavelengths and the use of partial bleaching and isothermal decay techniques for TL, allowed us to propose mechanisms for charge carrier rearrangement at lattice defects and impurity ions, during irradiation and subsequent heating.

  4. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus

    NASA Astrophysics Data System (ADS)

    Rudenko, A. N.; Brener, S.; Katsnelson, M. I.

    2016-06-01

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n , two-phonon scattering in BP is less important and can be considered negligible at n ≳1013 cm-2 . At smaller n , however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μx x/μy y˜1.4 at n =1013 cm-2 and T =300 K ), the electron mobility is found to be significantly more anisotropic (μx x/μy y˜6.2 ). Absolute values of μx x do not exceed 250 (700 ) cm2 V-1 s-1 for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  5. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    PubMed

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature. PMID:27367397

  6. Theory of chemical kinetics and charge transfer based on nonequilibrium thermodynamics.

    PubMed

    Bazant, Martin Z

    2013-05-21

    the past 7 years, which is capable of answering these questions. The reaction rate is a nonlinear function of the thermodynamic driving force, the free energy of reaction, expressed in terms of variational chemical potentials. The theory unifies and extends the Cahn-Hilliard and Allen-Cahn equations through a master equation for nonequilibrium chemical thermodynamics. For electrochemistry, I have also generalized both Marcus and Butler-Volmer kinetics for concentrated solutions and ionic solids. This new theory provides a quantitative description of LFP phase behavior. Concentration gradients and elastic coherency strain enhance the intercalation rate. At low currents, the charge-transfer rate is focused on exposed phase boundaries, which propagate as "intercalation waves", nucleated by surface wetting. Unexpectedly, homogeneous reactions are favored above a critical current and below a critical size, which helps to explain the rate capability of LFP nanoparticles. Contrary to other mechanisms, elevated temperatures and currents may enhance battery performance and lifetime by suppressing phase separation. The theory has also been extended to porous electrodes and could be used for battery engineering with multiphase active materials. More broadly, the theory describes nonequilibrium chemical systems at mesoscopic length and time scales, beyond the reach of molecular simulations and bulk continuum models. The reaction rate is consistently defined for inhomogeneous, nonequilibrium states, for example, with phase separation, large electric fields, or mechanical stresses. This research is also potentially applicable to fluid extraction from nanoporous solids, pattern formation in electrophoretic deposition, and electrochemical dynamics in biological cells. PMID:23520980

  7. Charge carrier transport properties in layer structured hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0)-α with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  8. Ultrafast charge carrier dynamics in Au/semiconductor nanoheterostructures

    NASA Astrophysics Data System (ADS)

    Lambright, Scott

    The charge carrier dynamics in several Au/semiconductor core/shell heterostructures were examined. Firstly, Au/CdS core/shell nanocomposites were synthesized in a four step procedure culminating in a cation exchange performed on the shell. Previous studies of the ultrafast carrier dynamics in Au/CdS nanocomposites with epitaxial boundary regions reported the suppression of plasmon character in transient absorption spectra accompanied by broadband photoinduced absorption. The coupling of electron wavefunctions with lattice defects at the boundary of the two domains has been blamed for these phenomena. In the current study, transmission electron micrographs of Au/CdS synthesized using cation exchange showed no evidence of strain on the lattice of either component, while femtosecond transient absorption data show the retention of bleach regions attributed to CdS's 1S(e)-1S3/2(h) transition and Au's plasmon resonance. Accelerated rates of bleach recovery for both excitations ( tauexiton ≈ 300 ps, tauplasmon ≈ .7 ps) indicated that the interaction of Au and CdS domains leads to faster relaxation to their respective photoexcitations when compared to relaxation times in isolated Au and CdS nanoparticles. It was believed that the Au/CdS boundary was non-epitaxial in the presented core/shell nanocomposites. Secondly, these non-epitaxial Au/CdS core/shells were subsequently used to demonstrate near-field energy transfer from 5 nm diameter Au cores to CdS-encapsulated CdSe quantum dots. To this end, Au/CdS and CdSe/CdS nanocrystals were embedded in semiconductor-matrix-encapsulated-nanocrystal-arrays (SMENA) together. The encapsulation of both domains in the high band-gap semiconductor CdS was a means to suppress charge transfer between the two nanoparticles. The fluorescence intensity in these films was enhanced 6-fold in some cases as a result of the presence of Au domains. It was also demonstrated that the fluorescence enhancement was independent of the potential

  9. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    NASA Astrophysics Data System (ADS)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  10. Drift of charge carriers in crystalline organic semiconductors

    NASA Astrophysics Data System (ADS)

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-01

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ˜105 V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

  11. Drift of charge carriers in crystalline organic semiconductors.

    PubMed

    Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

    2016-04-14

    We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes. PMID:27083750

  12. Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

    SciTech Connect

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-03-16

    We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

  13. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    SciTech Connect

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-03-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10{sup 18} cm{sup -3}. Beyond this defect level, a sublinear relation is found i

  14. Temperature dependence of charge carrier generation in organic photovoltaics.

    PubMed

    Gao, Feng; Tress, Wolfgang; Wang, Jianpu; Inganäs, Olle

    2015-03-27

    The charge generation mechanism in organic photovoltaics is a fundamental yet heavily debated issue. All the generated charges recombine at the open-circuit voltage (V_{OC}), so that investigation of recombined charges at V_{OC} provides a unique approach to understanding charge generation. At low temperatures, we observe a decrease of V_{OC}, which is attributed to reduced charge separation. Comparison between benchmark polymer:fullerene and polymer:polymer blends highlights the critical role of charge delocalization in charge separation and emphasizes the importance of entropy in charge generation. PMID:25860774

  15. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  16. Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy

    NASA Astrophysics Data System (ADS)

    Kumar, Nardeep; He, Jiaqi; He, Dawei; Wang, Yongsheng; Zhao, Hui

    2013-04-01

    We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection of a time-delayed and spatially scanned 660-nm pulse. We find an intervalley transfer time of about 0.35 ps, an energy relaxation time of hot carriers on the order of 50 ps, and a carrier lifetime of 180 ± 20 ps. By monitoring the spatiotemporal dynamics of carriers, we obtained a diffusion coefficient of thermalized electrons of 4.2 ± 0.5 cm2/s, corresponding to a mobility of 170 ± 20 cm2/Vs. We also observed a time-varying diffusion coefficient of hot carriers.

  17. Secondary electron emissions and dust charging currents in the nonequilibrium dusty plasma with power-law distributions

    SciTech Connect

    Gong Jingyu; Du Jiulin

    2012-06-15

    We study the secondary electron emissions induced by the impact of electrons on dust grains and the resulting dust charging processes in the nonequilibrium dusty plasma with power-law distributions. We derive new expressions of the secondary emitted electron flux and the dust charging currents that are generalized by the power-law q-distributions, where the nonlinear core functions are numerically studied for the nonextensive parameter q. Our numerical analyses show that the power-law q-distribution of the primary electrons has a significant effect on both the secondary emitted electron flux and the dust charging currents, and this effect depends strongly on the ratio of the electrostatic potential energy of the primary electrons at the dust grain's surface to the thermodynamic energy, implying that a competition in the dusty plasma between these two energies plays a crucial role in this novel effect.

  18. High energetic excitons in carbon nanotubes directly probe charge-carriers

    PubMed Central

    Soavi, Giancarlo; Scotognella, Francesco; Viola, Daniele; Hefner, Timo; Hertel, Tobias; Cerullo, Giulio; Lanzani, Guglielmo

    2015-01-01

    Theory predicts peculiar features for excited-state dynamics in one dimension (1D) that are difficult to be observed experimentally. Single-walled carbon nanotubes (SWNTs) are an excellent approximation to 1D quantum confinement, due to their very high aspect ratio and low density of defects. Here we use ultrafast optical spectroscopy to probe photogenerated charge-carriers in (6,5) semiconducting SWNTs. We identify the transient energy shift of the highly polarizable S33 transition as a sensitive fingerprint of charge-carriers in SWNTs. By measuring the coherent phonon amplitude profile we obtain a precise estimate of the Stark-shift and discuss the binding energy of the S33 excitonic transition. From this, we infer that charge-carriers are formed instantaneously (<50 fs) even upon pumping the first exciton, S11. The decay of the photogenerated charge-carrier population is well described by a model for geminate recombination in 1D. PMID:25959462

  19. Molecular length dictates the nature of charge carriers in single-molecule junctions of oxidized oligothiophenes.

    PubMed

    Dell, Emma J; Capozzi, Brian; Xia, Jianlong; Venkataraman, Latha; Campos, Luis M

    2015-03-01

    To develop advanced materials for electronic devices, it is of utmost importance to design organic building blocks with tunable functionality and to study their properties at the molecular level. For organic electronic and photovoltaic applications, the ability to vary the nature of charge carriers and so create either electron donors or acceptors is critical. Here we demonstrate that charge carriers in single-molecule junctions can be tuned within a family of molecules that contain electron-deficient thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed to increase electron affinity and maintain delocalized frontier orbitals while significantly decreasing the transport gap. Through thermopower measurements we show that the dominant charge carriers change from holes to electrons as the number of TDO units is increased. This results in a unique system in which the charge carrier depends on the backbone length, and provides a new means to tune p- and n-type transport in organic materials. PMID:25698329

  20. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  1. Dependence of charge transfer reorganization energy on carrier localisation in organic molecular crystals.

    PubMed

    Bromley, Stefan T; Illas, Francesc; Mas-Torrent, Marta

    2008-01-01

    Taking the organic molecular material dithiophene-tetrathiafulvalene (DT-TTF) as an example of a high mobility organic molecular material, we use density functional calculations to calculate the dependency of the reorganization energy associated with charge carrier transport on: (i) the geometric and electronic responsiveness of the local molecular crystal environment, and, (ii) the local spatial extent of the charge carrier. We find that in our most realistic extended models the charge transfer reorganization energy is strongly dependent on carrier localization. In particular, whereas highly localized carriers are found to be highly susceptible to their charge transfer efficiency being affected by changes in the local crystal environment, more delocalized carriers are better able to maintain their low reorganization energies. Considering that maintaining a relatively small charge transfer reorganization energy magnitude is an important factor in achieving high carrier mobilities, we suggest that those materials better able to sustain carriers with short-range thermally resistant intermolecular delocalisation should be sought for device applications. PMID:18075690

  2. Electric field assisted charge carrier photogeneration in poly(spirobifluorene-co-benzothiadiazole)

    SciTech Connect

    Devizis, A.; Serbenta, A.; Peckus, D.; Thiessen, A.; Alle, R.; Meerholz, K.; Hertel, D.; Gulbinas, V.

    2010-10-28

    The dynamics of charge carrier generation in poly(spirobifluorene-co-benzothiadiazole) was investigated by electric field-induced fluorescence quenching and differential absorption measurements. Three different time domains of carrier generation have been identified: an ultrafast phase, a subnanosecond phase, and an entire lifetime phase. The charge generation efficiencies during the first and second phases were found to be almost independent of temperature, being about 25% and 10%, respectively, at an applied electric field of 1.3x10{sup 6} V/cm, while the generation efficiency during the third phase increases from 2% at 80 K to 10% at room temperature. The results of transient spectroscopy measurements and quantum chemical calculations suggest an intramolecular charge transfer for about 1 ps from the alkoxy-substituted fluorene side group to the benzothiadiazole subunit of the main chain. The formation and evolution of the resulting charge transfer states determine the way of charge carrier generation.

  3. Earthquake lights and the stress-activation of positive hole charge carriers in rocks

    USGS Publications Warehouse

    St-Laurent, F.; Derr, J.S.; Freund, F.T.

    2006-01-01

    Earthquake-related luminous phenomena (also known as earthquake lights) may arise from (1) the stress-activation of positive hole (p-hole) charge carriers in igneous rocks and (2) the accumulation of high charge carrier concentrations at asperities in the crust where the stress rates increase very rapidly as an earthquake approaches. It is proposed that, when a critical charge carrier concentration is reached, the p-holes form a degenerated solid state plasma that can break out of the confined rock volume and propagate as a rapidly expanding charge cloud. Upon reaching the surface the charge cloud causes dielectric breakdown at the air-rock interface, i.e. corona discharges, accompanied by the emission of light and high frequency electromagnetic radiation. ?? 2006 Elsevier Ltd. All rights reserved.

  4. Single Charge Current in a Normal Mesoscopic Region Attached to Superconductor Leads via a Coupled Poisson Nonequilibrium Green Function Formalism

    PubMed Central

    Marin, F. P.

    2014-01-01

    We study the I-V characteristic of mesoscopic systems or quantum dot (QD) attached to a pair of superconducting leads. Interaction effects in the QD are considered through the charging energy of the QD; that is, the treatment of current transport under a voltage bias is performed within a coupled Poisson nonequilibrium Green function (PNEGF) formalism. We derive the expression for the current in full generality but consider only the regime where transport occurs only via a single particle current. We show for this case and for various charging energies values U 0 and associated capacitances of the QD the effect on the I-V characteristic. Also the influence of the coupling constants on the I-V characteristic is investigated. Our approach puts forward a novel interpretation of experiments in the strong Coulomb regime. PMID:24977220

  5. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ... Federal Aviation Administration Passenger Facility Charge Database System for Air Carrier Reporting AGENCY... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... public agency. The FAA has developed a national PFC database system in order to more easily track the...

  6. Charge-reversal nanoparticles: novel targeted drug delivery carriers.

    PubMed

    Chen, Xinli; Liu, Lisha; Jiang, Chen

    2016-07-01

    Spurred by significant progress in materials chemistry and drug delivery, charge-reversal nanocarriers are being developed to deliver anticancer formulations in spatial-, temporal- and dosage-controlled approaches. Charge-reversal nanoparticles can release their drug payload in response to specific stimuli that alter the charge on their surface. They can elude clearance from the circulation and be activated by protonation, enzymatic cleavage, or a molecular conformational change. In this review, we discuss the physiological basis for, and recent advances in the design of charge-reversal nanoparticles that are able to control drug biodistribution in response to specific stimuli, endogenous factors (changes in pH, redox gradients, or enzyme concentration) or exogenous factors (light or thermos-stimulation). PMID:27471667

  7. Nonequilibrium Fermi's Golden Rule Charge Transfer Rates via the Linearized Semiclassical Method.

    PubMed

    Sun, Xiang; Geva, Eitan

    2016-06-14

    Nonequilibrium Fermi's golden rule (NE-FGR) describes the transition between a photoexcited bright donor electronic state and a dark acceptor electronic state when the nuclear degrees of freedom start out in a nonequilibrium state. In this article, we derive a new expression for NE-FGR within the framework of the linearized semiclassical approximation. The new expression opens the door for applications of NE-FGR in complex condensed-phase molecular systems described in terms of anharmonic force fields. We show that the linearized semiclassical expression for NE-FGR yields the exact fully quantum-mechanical result for the canonical Marcus model, where the coupling between donor and acceptor is assumed constant (the Condon approximation) and the donor and acceptor potential energy surfaces are parabolic and identical except for a shift in the equilibrium energy and geometry. For this model, we also present a comprehensive comparison between the linearized semiclassical expression and a hierarchy of more approximate expressions, in both normal and inverted regions and over a wide range of initial nonequilibrium states, temperatures, and frictions. PMID:27128887

  8. Controlling the screening process of a nanoscaled space charge region by minority carriers

    PubMed Central

    Kloth, Philipp; Kaiser, Katharina; Wenderoth, Martin

    2016-01-01

    The miniaturization of future electronic devices is intimately connected to the ability to control electric fields on the atomic scale. In a nanoscopic system defined by a limited number of charges, the combined dynamics of bound and free charges become important. Here we present a model system based on the electrostatic interaction between a metallic tip of a scanning tunnelling microscope and a GaAs(110) semiconductor surface. The system is driven out of equilibrium by optical excitation, which provides ambipolar free charge carriers, and by an optically induced unipolar tunnel current. This combination enables the active control of the density and spatial distribution of free and bound charge in the space-charge region, that is, modifying the screening processes. Temporal fluctuations of single dopants are modified, meaning we are able to control the noise of the system. It is found that free charge carriers suppress the noise level in field-controlled, nanoscopic systems. PMID:26728867

  9. Controlling the screening process of a nanoscaled space charge region by minority carriers.

    PubMed

    Kloth, Philipp; Kaiser, Katharina; Wenderoth, Martin

    2016-01-01

    The miniaturization of future electronic devices is intimately connected to the ability to control electric fields on the atomic scale. In a nanoscopic system defined by a limited number of charges, the combined dynamics of bound and free charges become important. Here we present a model system based on the electrostatic interaction between a metallic tip of a scanning tunnelling microscope and a GaAs(110) semiconductor surface. The system is driven out of equilibrium by optical excitation, which provides ambipolar free charge carriers, and by an optically induced unipolar tunnel current. This combination enables the active control of the density and spatial distribution of free and bound charge in the space-charge region, that is, modifying the screening processes. Temporal fluctuations of single dopants are modified, meaning we are able to control the noise of the system. It is found that free charge carriers suppress the noise level in field-controlled, nanoscopic systems. PMID:26728867

  10. Controlling the screening process of a nanoscaled space charge region by minority carriers

    NASA Astrophysics Data System (ADS)

    Kloth, Philipp; Kaiser, Katharina; Wenderoth, Martin

    2016-01-01

    The miniaturization of future electronic devices is intimately connected to the ability to control electric fields on the atomic scale. In a nanoscopic system defined by a limited number of charges, the combined dynamics of bound and free charges become important. Here we present a model system based on the electrostatic interaction between a metallic tip of a scanning tunnelling microscope and a GaAs(110) semiconductor surface. The system is driven out of equilibrium by optical excitation, which provides ambipolar free charge carriers, and by an optically induced unipolar tunnel current. This combination enables the active control of the density and spatial distribution of free and bound charge in the space-charge region, that is, modifying the screening processes. Temporal fluctuations of single dopants are modified, meaning we are able to control the noise of the system. It is found that free charge carriers suppress the noise level in field-controlled, nanoscopic systems.

  11. Slower carriers limit charge generation in organic semiconductor light-harvesting systems

    PubMed Central

    Stolterfoht, Martin; Armin, Ardalan; Shoaee, Safa; Kassal, Ivan; Burn, Paul; Meredith, Paul

    2016-01-01

    Blends of electron-donating and -accepting organic semiconductors are widely used as photoactive materials in next-generation solar cells and photodetectors. The yield of free charges in these systems is often determined by the separation of interfacial electron–hole pairs, which is expected to depend on the ability of the faster carrier to escape the Coulomb potential. Here we show, by measuring geminate and non-geminate losses and key transport parameters in a series of bulk-heterojunction solar cells, that the charge-generation yield increases with increasing slower carrier mobility. This is in direct contrast with the well-established Braun model where the dissociation rate is proportional to the mobility sum, and recent models that underscore the importance of fullerene aggregation for coherent electron propagation. The behaviour is attributed to the restriction of opposite charges to different phases, and to an entropic contribution that favours the joint separation of both charge carriers. PMID:27324720

  12. Slower carriers limit charge generation in organic semiconductor light-harvesting systems.

    PubMed

    Stolterfoht, Martin; Armin, Ardalan; Shoaee, Safa; Kassal, Ivan; Burn, Paul; Meredith, Paul

    2016-01-01

    Blends of electron-donating and -accepting organic semiconductors are widely used as photoactive materials in next-generation solar cells and photodetectors. The yield of free charges in these systems is often determined by the separation of interfacial electron-hole pairs, which is expected to depend on the ability of the faster carrier to escape the Coulomb potential. Here we show, by measuring geminate and non-geminate losses and key transport parameters in a series of bulk-heterojunction solar cells, that the charge-generation yield increases with increasing slower carrier mobility. This is in direct contrast with the well-established Braun model where the dissociation rate is proportional to the mobility sum, and recent models that underscore the importance of fullerene aggregation for coherent electron propagation. The behaviour is attributed to the restriction of opposite charges to different phases, and to an entropic contribution that favours the joint separation of both charge carriers. PMID:27324720

  13. Curl flux, coherence, and population landscape of molecular systems: Nonequilibrium quantum steady state, energy (charge) transport, and thermodynamics

    SciTech Connect

    Zhang, Z. D.; Wang, J.

    2014-06-28

    We established a theoretical framework in terms of the curl flux, population landscape, and coherence for non-equilibrium quantum systems at steady state, through exploring the energy and charge transport in molecular processes. The curl quantum flux plays the key role in determining transport properties and the system reaches equilibrium when flux vanishes. The novel curl quantum flux reflects the degree of non-equilibriumness and the time-irreversibility. We found an analytical expression for the quantum flux and its relationship to the environmental pumping (non-equilibriumness quantified by the voltage away from the equilibrium) and the quantum tunneling. Furthermore, we investigated another quantum signature, the coherence, quantitatively measured by the non-zero off diagonal element of the density matrix. Populations of states give the probabilities of individual states and therefore quantify the population landscape. Both curl flux and coherence depend on steady state population landscape. Besides the environment-assistance which can give dramatic enhancement of coherence and quantum flux with high voltage at a fixed tunneling strength, the quantum flux is promoted by the coherence in the regime of small tunneling while reduced by the coherence in the regime of large tunneling, due to the non-monotonic relationship between the coherence and tunneling. This is in contrast to the previously found linear relationship. For the systems coupled to bosonic (photonic and phononic) reservoirs the flux is significantly promoted at large voltage while for fermionic (electronic) reservoirs the flux reaches a saturation after a significant enhancement at large voltage due to the Pauli exclusion principle. In view of the system as a quantum heat engine, we studied the non-equilibrium thermodynamics and established the analytical connections of curl quantum flux to the transport quantities such as energy (charge) transfer efficiency, chemical reaction efficiency, energy

  14. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    PubMed

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  15. Tuning the charge carrier density in the thermoelectric colusite

    NASA Astrophysics Data System (ADS)

    Kim, Fiseong S.; Suekuni, Koichiro; Nishiate, Hirotaka; Ohta, Michihiro; Tanaka, Hiromi I.; Takabatake, Toshiro

    2016-05-01

    The colusite Cu26V2Sn6S32 has high potential as a thermoelectric material at medium-high temperatures because of a large Seebeck coefficient (S ≃ 220 μV/K) and rather small electrical resistivity (ρ ≃ 100 μΩm) at 660 K. To improve the thermoelectric performance, we have tuned the hole carrier density p by substituting Zn for Cu in Cu26-xZnxV2Sn6S32 (x = 1-3) and starting with Cu and Sn deficient compositions in Cu26-yV2Sn6S32 (y = 1, 2) and Cu26V2Sn6-zS32 (z = 0.25-1), respectively. Powder x-ray diffraction and electron-probe microanalysis showed that the Zn-substituted samples and Sn-deficient (z ≥ 0.5) samples are formed in a single phase, whereas the Cu26-yV2Sn6S32 samples are composed of two phases with slightly different compositions. Within these samples, the value of p at 300 K varies in the range between 3.6 × 1020 and 2.8 × 1021 cm-3. The relation between p and S led to the effective mass m* of 4-7m0 for the hole carriers. The large S of the colusite is therefore ascribed to the heavy mass carriers of the valence band top. The decreases in p with x and y reduced the dimensionless thermoelectric figure of merit ZT, whereas the increase in p with z raised ZT from 0.56 (z = 0) to 0.62 (z = 0.5) at 660 K.

  16. Stabilization of Charge Carriers in Picket-Fence Polythiophenes Using Dielectric Side Chains.

    PubMed

    Zhao, Chunhui; Sakurai, Tsuneaki; Yoneda, Satoru; Seki, Shu; Sugimoto, Manabu; Oki, Choji; Takeuchi, Masayuki; Sugiyasu, Kazunori

    2016-08-19

    Insulated molecular wires (IMWs) are π-conjugated polymers that are molecularly sheathed with an insulating layer and are structurally analogous to electric power cords at the nanoscale. Such unique architectures are expected in molecular electronics and organic devices. Herein, we propose a new molecular design concept of IMWs, in which the sheaths can be customized, thereby enabling the modulation of the electronic properties of the interior π-conjugated systems. To this end, we focused our attention on the dielectric constant of the sheaths, as it governs the electrostatic interaction between charges. Upon doping, charge carriers, such as polaron and bipolaron, were generated regardless of the dielectric properties of the sheaths. Flash-photolysis time-resolved microwave conductivity measurements revealed that intrawire charge carrier mobility was independent of the sheaths. However, we found that the charge carriers could be stabilized by the sheaths with a high dielectric constant owing to the charge screening effect. We expect that IMWs designed in this way will be useful in a variety of applications, where the nature of charge carriers plays an important role, and particularly when redox switching is required (e.g., electrochromic, magnetic, and memory applications). PMID:27503254

  17. Relation between absorbed dose, charged particle equilibrium and nuclear transformations: a non-equilibrium thermodynamics point of view.

    PubMed

    Alvarez-Romero, J T

    2006-01-01

    We present a discussion to show that the absorbed dose D is a time-dependent function. This time dependence is demonstrated based on the concepts of charged particle equilibrium and on radiation equilibrium within the context of thermodynamic non-equilibrium. In the latter, the time dependence is due to changes of the rest mass energy of the nuclei and elementary particles involved in the terms summation operator Q and Q that appear in the definitions of energy imparted epsilon and energy deposit epsilon(i), respectively. In fact, nothing is said about the averaging operation of the non-stochastic quantity mean energy imparted epsilon, which is used in the definition of D according to ICRU 60. It is shown in this research that the averaging operation necessary to define the epsilon employed to get D cannot be performed with an equilibrium statistical operator rho(r) as could be expected. Rather, the operation has to be defined with a time-dependent non-equilibrium statistical operator rho(r, t); therefore, D is a time-dependent function D(r,t). PMID:16731692

  18. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  19. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-01

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds. PMID:26703885

  20. Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Kraft, C.; Hempel, H.; Buschmann, V.; Siebert, T.; Heisler, C.; Wesch, W.; Ronning, C.

    2013-03-01

    The lifetime of the minority charge carriers in polycrystalline Cadmium Telluride (pc-CdTe) for solar cell applications is a crucial material parameter and has been determined by analysis of the decay curves of the luminescence signal. Both the lateral and the transversal distributions of the carrier lifetime on the surface and in the bulk of pc-CdTe material as well as the respective solar cell characteristics were measured as a function of the deposition technique, the activation treatment, and the incorporation of additional group-V elements. The results are compared to prior studies. It was found that an activation process passivates grain boundaries and increases the carrier lifetime, which is then higher at the pn-junction than at the surface. Furthermore, nitrogen and phosphorus doping of the CdTe absorber material influences the charge carrier lifetime. The results show that the spatial resolved measurement of the carrier lifetime in pc-CdTe gives an important insight to the charge carrier dynamics of the material.

  1. Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements.

    PubMed

    Ulbricht, Ronald; Kurstjens, Rufi; Bonn, Mischa

    2012-07-11

    Free-standing semiconductor nanowires on bulk substrates are increasingly being explored as building blocks for novel optoelectronic devices such as tandem solar cells. Although carrier transport properties, such as mobility and trap densities, are essential for such applications, it has remained challenging to quantify these properties. Here, we report on a method that permits the direct, contact-free quantification of nanowire carrier diffusivity and trap densities in thin (∼25 nm wide) silicon nanowires-without any additional processing steps such as transfer of wires onto a substrate. The approach relies on the very different terahertz (THz) conductivity response of photoinjected carriers within the silicon nanowires from those in the silicon substrate. This allows quantifying both the picosecond dynamics and the efficiency of charge carrier transport from the silicon nanowires into the silicon substrate. Varying the excitation density allows for quantification of nanowire trap densities: for sufficiently low excitation fluences the diffusion process stalls because the majority of charge carriers become trapped at nanowire surface defects. Using a model that includes these effects, we determine both the diffusion constant and the nanowire trap density. The trap density is found to be orders of magnitude larger than the charge carrier density that would be generated by AM1.5 sunlight. PMID:22738182

  2. Spatial variation of charge carrier density in graphene under a large bias current

    NASA Astrophysics Data System (ADS)

    Pan, Jie; Zhang, Haijing; Zheng, Yuan; Zhang, Bing; Zhang, Ting; Sheng, Ping

    2016-03-01

    By carrying out the Hall measurements under a large bias current, we have directly observed the spatial variation of the carrier density in graphene. This carrier density variation is found to depend on the bias direction; hence it cannot be caused by the heating effect, which should be independent of the bias current direction. A simple back-gate tuning model, involving a self-consistent calculation on longitudinal transport coupled with carrier density variation, is shown to explain the experimental results very well. Various implications of this phenomenon, including the shift of charge neutrality point under a large bias, are investigated and discussed.

  3. Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

    NASA Astrophysics Data System (ADS)

    Sivaraman, Sajeev; Anantharaman, M. R.

    2010-02-01

    The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium-PA-aluminium (Al-PA-Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J-V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO-PA-Al structure) show a diode-like behaviour with a considerable rectification ratio.

  4. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    DOE PAGESBeta

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  5. Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Zielke, David; Polzin, Jana; Sasaki, Takahiko; Müller, Jens

    2015-05-01

    We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical end point, we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.

  6. Charge-Carrier Dynamics and Mobilities in Formamidinium Lead Mixed-Halide Perovskites.

    PubMed

    Rehman, Waqaas; Milot, Rebecca L; Eperon, Giles E; Wehrenfennig, Christian; Boland, Jessica L; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

    2015-12-22

    The mixed-halide perovskite FAPb(Bry I1-y )3 is attractive for color-tunable and tandem solar cells. Bimolecular and Auger charge-carrier recombination rate constants strongly correlate with the Br content, y, suggesting a link with electronic structure. FAPbBr3 and FAPbI3 exhibit charge-carrier mobilities of 14 and 27 cm(2) V(-1) s(-1) and diffusion lengths exceeding 1 μm, while mobilities across the mixed Br/I system depend on crystalline phase disorder. PMID:26402226

  7. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge

    PubMed Central

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway

  8. Charge Carrier Lifetimes Exceeding 15 μs in Methylammonium Lead Iodide Single Crystals.

    PubMed

    Bi, Yu; Hutter, Eline M; Fang, Yanjun; Dong, Qingfeng; Huang, Jinsong; Savenije, Tom J

    2016-03-01

    The charge carrier lifetime in organic-inorganic perovskites is one of the most important parameters for modeling and design of solar cells and other types of devices. In this work, we use CH3NH3PbI3 single crystal as a model system to study optical absorption, charge carrier generation, and recombination lifetimes. We show that commonly applied photoluminescence lifetime measurements may dramatically underestimate the intrinsic carrier lifetime in CH3NH3PbI3, which could be due to severe charge recombination at the crystal surface and/or fast electron-hole recombination close to the surface. By using the time-resolved microwave conductivity technique, we investigated the lifetime of free mobile charges inside the crystals. Most importantly, we find that for homogeneous excitation throughout the crystal, the charge carrier lifetime exceeds 15 μs. This means that the diffusion length in CH3NH3PbI3 can be as large as 50 μm if it is no longer limited by the dimensions of the crystallites. PMID:26901658

  9. Dynamics of charge transfer: Rate processes formulated with nonequilibrium Green's functions

    SciTech Connect

    Yeganeh, Sina; Ratner, Mark A.; Mujica, Vladimiro

    2007-04-28

    The authors examine the connection between electron transport under bias in a junction and nonadiabatic intramolecular electron transfer (ET). It is shown that under certain assumptions it is possible to define a stationary current that allows the computation of the intramolecular transfer rate using the same formalism that is employed in the description of transport. They show that the nonequilibrium Green's function formalism of quantum transport can be used to calculate the ET rate. The formal connection between electron transport and electron transfer is made, and they work out the simple case of an electronic level coupled to a vibrational mode representing a thermal bath and show that the result is the same as expected from a Fermi golden rule treatment, and in the high-temperature limit yields the Marcus electron transfer theory. The usefulness of this alternative formulation of rates is discussed.

  10. Charge Carrier Dynamics in Transition Metal Oxides Studied by Femtosecond Transient Extreme Ultraviolet Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Jiang, Chang-Ming

    With the ability to disentangle electronic transitions that occur on different elements and local electronic structures, time-resolved extreme ultraviolet (XUV) spectroscopy has emerged as a powerful tool for studying ultrafast dynamics in condensed phase systems. In this dissertation, a visible-pump/XUV-probe transient absorption apparatus with femtosecond resolution was constructed to investigate the carrier relaxation dynamics in semiconductors after photo-excitation. This includes timescales for carrier thermalization by carrier-carrier and carrier-phonon scattering. The 30 -- 72 eV photon energy coverage (17 -- 40 nm wavelength) generated by a table-top XUV light source is suitable for probing the 3p-to-3d core level absorptions of various transition metal oxides (TMOs) with specificities to elements and oxidation states. In Chapter 1, a brief introduction to charge carrier dynamics in semiconductor-based materials is given. In addition, fundamentals of core-level spectroscopy and the high harmonic generation (HHG) process are also addressed in this introductory chapter. Specifications of the experimental apparatus that was constructed are summarized in Chapter 2, including the design concepts and characterization of performance. Chapter 3 presents the spectral tunability of the XUV pulses generated from a semi-infinite gas cell (SIGC), as well as the data acquisition procedures. Charge carrier relaxation dynamics in Co3O4 following the charge transfer excitation pathway at 400 nm are documented in Chapter 4. In Chapter 5, various visible pump wavelengths are used to excite Co3O4 and the differences in the carrier dynamics versus excitation wavelength are considered. After selectively photoexciting a Si/TiO2 heterojunction, the resulted electron transfer process is observed and reported in Chapter 6. The concluding remarks of the dissertation are made in Chapter 7, while several ongoing time-resolved experiments are addressed in the Appendix sections.

  11. Nonequilibrium spin injection in monolayer black phosphorus.

    PubMed

    Chen, Mingyan; Yu, Zhizhou; Wang, Yin; Xie, Yiqun; Wang, Jian; Guo, Hong

    2016-01-21

    Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior properties where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium. PMID:26675820

  12. Nonequilibrium spin injection in monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Chen, Mingyan; Yu, Zhizhou; Wang, Yin; Xie, Yiqun; Wang, Jian; Guo, Hong

    Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties such as the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior properties where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium.

  13. Imaging charge separation and carrier recombination in nanowire p-i-n junctions using ultrafast microscopy.

    PubMed

    Gabriel, Michelle M; Grumstrup, Erik M; Kirschbrown, Justin R; Pinion, Christopher W; Christesen, Joseph D; Zigler, David F; Cating, Emma E M; Cahoon, James F; Papanikolas, John M

    2014-06-11

    Silicon nanowires incorporating p-type/n-type (p-n) junctions have been introduced as basic building blocks for future nanoscale electronic components. Controlling charge flow through these doped nanostructures is central to their function, yet our understanding of this process is inferred from measurements that average over entire structures or integrate over long times. Here, we have used femtosecond pump-probe microscopy to directly image the dynamics of photogenerated charge carriers in silicon nanowires encoded with p-n junctions along the growth axis. Initially, motion is dictated by carrier-carrier interactions, resulting in diffusive spreading of the neutral electron-hole cloud. Charge separation occurs at longer times as the carrier distribution reaches the edges of the depletion region, leading to a persistent electron population in the n-type region. Time-resolved visualization of the carrier dynamics yields clear, direct information on fundamental drift, diffusion, and recombination processes in these systems, providing a powerful tool for understanding and improving materials for nanotechnology. PMID:24867088

  14. Charge-carrier relaxation in disordered organic semiconductors studied by dark injection: Experiment and modeling

    NASA Astrophysics Data System (ADS)

    Mesta, M.; Schaefer, C.; de Groot, J.; Cottaar, J.; Coehoorn, R.; Bobbert, P. A.

    2013-11-01

    Understanding of stationary charge transport in disordered organic semiconductors has matured during recent years. However, charge-carrier relaxation in nonstationary situations is still poorly understood. Such relaxation can be studied in dark injection experiments, in which the bias applied over an unilluminated organic semiconductor device is abruptly increased. The resulting transient current reveals both charge-carrier transport and relaxation characteristics. We performed such experiments on hole-only devices of a polyfluorene-based organic semiconductor. Modeling the dark injection by solving a one-dimensional master equation using the equilibrium carrier mobility leads to a too-slow current transient, since this approach does not account for carrier relaxation. Modeling by solving a three-dimensional time-dependent master equation does take into account all carrier transport and relaxation effects. With this modeling, the time scale of the current transient is found to be in agreement with experiment. With a disorder strength somewhat smaller than extracted from the temperature-dependent stationary current-voltage characteristics, also the shape of the experimental transients is well described.

  15. Origin and distribution of charge carriers in LaAlO3-SrTiO3 oxide heterostructures in the high carrier density limit

    NASA Astrophysics Data System (ADS)

    Mukherjee, Sumanta; Pal, Banabir; Choudhury, Debraj; Sarkar, Indranil; Drube, Wolfgang; Gorgoi, Mihaela; Karis, Olof; Takagi, H.; Matsuno, Jobu; Sarma, D. D.

    2016-06-01

    Using hard x-ray photoelectron spectroscopy with variable photon energy (2-8 keV), we address the distribution of charge carriers in the prototypical LaAlO3 (LAO) and SrTiO3 (STO) oxide heterostructures with high carrier densities (1017cm-2 ). Our results demonstrate the presence of two distinct charge distributions in this system: one tied to the interface with a ˜1 -nm width and ˜2 -5 × 1014-cm-2 carrier concentration, while the other appears distributed nearly homogeneously through the bulk of STO corresponding to a much larger carrier contribution. Our results also establish bimodal oxygen vacancies, namely on top of LAO and throughout STO, quantitatively establishing these as the origin of the observed bimodal depth distribution of charge carriers in these highly doped sample.

  16. Possibility of contactless measurement of free charge carrier mobility in semiconductors by the uhf resonator method

    SciTech Connect

    Meduedev, Y.V.; Skryl'nikov, A.A.

    1986-01-01

    This paper describes a contact-free uhf resonator method for measurement of charge carrier mobility by means of a quasistatic uhf resonator with externally connected semiconductor specimen. The method obtains simple relationships which allow determination of the magnetoresistive mobility from the change in Q of the external portion of the resonator under the action of a weak magnetic field.

  17. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    PubMed

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  18. Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

    NASA Astrophysics Data System (ADS)

    Smith, Andrew M.; Lane, Lucas A.; Nie, Shuming

    2014-07-01

    Quantum-confined nanostructures are considered ‘artificial atoms’ because the wavefunctions of their charge carriers resemble those of atomic orbitals. For multiple-domain heterostructures, however, carrier wavefunctions are more complex and still not well understood. We have prepared a unique series of cation-exchanged HgxCd1-xTe quantum dots (QDs) and seven epitaxial core-shell QDs and measured their first and second exciton peak oscillator strengths as a function of size and chemical composition. A major finding is that carrier locations can be quantitatively mapped and visualized during shell growth or cation exchange simply using absorption transition strengths. These results reveal that a broad range of quantum heterostructures with different internal structures and band alignments exhibit distinct carrier localization patterns that can be used to further improve the performance of optoelectronic devices and enhance the brightness of QD probes for bioimaging.

  19. Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

    PubMed Central

    Smith, Andrew M.; Lane, Lucas A.; Nie, Shuming

    2014-01-01

    Quantum-confined nanostructures are considered ‘artificial atoms’ because the wavefunctions of their charge carriers resemble those of atomic orbitals. For multiple-domain heterostructures, however, carrier wavefunctions are more complex and still not well understood. We have prepared a unique series of cation-exchanged HgxCd1−xTe quantum dots (QDs) and seven epitaxial core–shell QDs and measured their first and second exciton peak oscillator strengths as a function of size and chemical composition. A major finding is that carrier locations can be quantitatively mapped and visualized during shell growth or cation exchange simply using absorption transition strengths. These results reveal that a broad range of quantum heterostructures with different internal structures and band alignments exhibit distinct carrier localization patterns that can be used to further improve the performance of optoelectronic devices and enhance the brightness of QD probes for bioimaging. PMID:25080298

  20. Spin-orbit-coupling induced torque in ballistic domain walls: Equivalence of charge-pumping and nonequilibrium magnetization formalisms

    NASA Astrophysics Data System (ADS)

    Yuan, Zhe; Kelly, Paul J.

    2016-06-01

    To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the "charge-pumping" formalism, we find two contributions to the out-of-plane spin-transfer torque parameter β in ballistic Ni domain walls (DWs). For short DWs, the nonadiabatic reflection of conduction electrons caused by the rapid spatial variation of the exchange potential results in an out-of-plane torque that increases rapidly with decreasing DW length. For long DWs, the Fermi level conduction channel anisotropy that gives rise to an intrinsic DW resistance in the presence of SOC leads to a linear dependence of β on the DW length. To understand this counterintuitive divergence of β in the long DW limit, we use the "nonequilibrium magnetization" formalism to examine the spatially resolved spin-transfer torque. The SOC-induced out-of-plane torque in ballistic DWs is found to be quantitatively consistent with the values obtained using the charge-pumping calculations, indicating the equivalence of the two theoretical methods.

  1. Ab initio charge-carrier mobility model for amorphous molecular semiconductors

    NASA Astrophysics Data System (ADS)

    Massé, Andrea; Friederich, Pascal; Symalla, Franz; Liu, Feilong; Nitsche, Robert; Coehoorn, Reinder; Wenzel, Wolfgang; Bobbert, Peter A.

    2016-05-01

    Accurate charge-carrier mobility models of amorphous organic molecular semiconductors are essential to describe the electrical properties of devices based on these materials. The disordered nature of these semiconductors leads to percolative charge transport with a large characteristic length scale, posing a challenge to the development of such models from ab initio simulations. Here, we develop an ab initio mobility model using a four-step procedure. First, the amorphous morphology together with its energy disorder and intermolecular charge-transfer integrals are obtained from ab initio simulations in a small box. Next, the ab initio information is used to set up a stochastic model for the morphology and transfer integrals. This stochastic model is then employed to generate a large simulation box with modeled morphology and transfer integrals, which can fully capture the percolative charge transport. Finally, the charge-carrier mobility in this simulation box is calculated by solving a master equation, yielding a mobility function depending on temperature, carrier concentration, and electric field. We demonstrate the procedure for hole transport in two important molecular semiconductors, α -NPD and TCTA. In contrast to a previous study, we conclude that spatial correlations in the energy disorder are unimportant for α -NPD. We apply our mobility model to two types of hole-only α -NPD devices and find that the experimental temperature-dependent current density-voltage characteristics of all devices can be well described by only slightly decreasing the simulated energy disorder strength.

  2. Evidence of low-mobile charge carriers in YBa{sub 2}Cu{sub 3}O{sub 6+x}

    SciTech Connect

    Rudy, A.S.; Churilov, A.B.

    1994-12-31

    The present work results reveal that the heterogeneous system is one of the forms of oxygen nonstoichiometry, realization of oxygen-deficient YBa{sub 2}Cu{sub 3}O{sub 6+x}. It is noteworthy that NMP is formed above 980 C through labile oxygen redistribution and leaves the lattice of heavy ions invariable. Being a random microscopically inhomogeneous media the NW exhibits a number of anomalous dielectric properties absent for each separate component. Probably the degree of labile oxygen segregation in NMP is so high, that static permittivity of dielectric phase is completely determined by small polarons. On the other hand the NMP DF measurements provide an effective values of mobility and its activation energy giving a rough idea of small polarons dynamics. At low temperature the picture is complicated by nonequilibrium charge carriers excitation. To elaborate an adequate model of the entire phenomenon, more detailed information on oxygen positions and phase percolation threshold is necessary.

  3. On the nature of charge carrier scattering in Ag{sub 2}Se at low temperatures

    SciTech Connect

    Jafarov, M. B.

    2010-10-15

    The electric and thermoelectric properties of silver selenide in the temperature range of 4.2-300 K have been studied. The data obtained are interpreted within the theory of one-type carriers and Kane dispersion relation, with allowance for the character of electron-electron interaction. It is established that, for the concentrations n {<=} 7.8 x 10{sup 18} cm{sup -3}, charge carriers are scattered by impurity ions at T {<=} 30 K and by acoustic and optical phonons and point defects at T {>=} 30 K. Electron-electron interactions are found to be elastic at T < 30 K.

  4. Dielectric force microscopy: imaging charge carriers in nanomaterials without electrical contacts.

    PubMed

    Zhang, Jie; Lu, Wei; Li, Yize Stephanie; Cai, Jinhua; Chen, Liwei

    2015-07-21

    Nanomaterials are increasingly used in electronic, optoelectronic, bioelectronic, sensing, and energy nanodevices. Characterization of electrical properties at nanometer scales thus becomes not only a pursuit in basic science but also of widespread practical need. The conventional field-effect transistor (FET) approach involves making electrical contacts to individual nanomaterials. This approach faces serious challenges in routine characterization due to the small size and the intrinsic heterogeneity of nanomaterials, as well as the difficulties in forming Ohmic contact with nanomaterials. Since the charge carrier polarization in semiconducting and metallic materials dominates their dielectric response to external fields, detecting dielectric polarization is an alternative approach in probing the carrier properties and electrical conductivity in nanomaterials. This Account reviews the challenges in the electrical conductivity characterization of nanomaterials and demonstrates that dielectric force microscopy (DFM) is a powerful tool to address the challenges. DFM measures the dielectric polarization via its force interaction with charges on the DFM tip and thus eliminates the need to make electrical contacts with nanomaterials. Furthermore, DFM imaging provides nanometer-scaled spatial resolution. Single-walled carbon nanotubes (SWNTs) and ZnO nanowires are used as model systems. The transverse dielectric permittivity of SWNTs is quantitatively measured to be ∼10, and the differences in longitudinal dielectric polarization are exploited to distinguish metallic SWNTs from semiconducting SWNTs. By application of a gate voltage at the DFM tip, the local carrier concentration underneath the tip can be accumulated or depleted, depending on charge carrier type and the density of states near the Fermi level. This effect is exploited to identify the conductivity type and carrier type in nanomaterials. By making comparison between DFM and FET measurements on the exact

  5. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, Paul

    1996-01-01

    An ionization detector electrode and signal subtraction apparatus and method provides at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector.

  6. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, P.

    1996-06-25

    An ionization detector electrode and signal subtraction apparatus and method provide at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector. 9 figs.

  7. Determination of charge carrier concentration in doped nonpolar liquids by impedance spectroscopy in the presence of charge adsorption.

    PubMed

    Yezer, Benjamin A; Khair, Aditya S; Sides, Paul J; Prieve, Dennis C

    2016-05-01

    The impedance of dodecane doped with sorbitan trioleate (Span 85), sorbitan monooleate (Span 80) and sorbitan monolaurate (Span 20) was measured as a function of frequency using a 10mV amplitude sinusoidal voltage applied across a parallel plate cell with a 10μm spacing. The tested solutions varied in concentration from 1mM to 100mM and the frequency range was 10(-2)-10(4)Hz. Nyquist plots of all three surfactants showed the high frequency semicircle characteristic of parallel resistance and capacitance but often exhibited a second semicircle at low frequencies which was attributed to charge adsorption and desorption. The electrical conductivity of each surfactant was proportional to surfactant concentration for concentrations above 10mM. Fitting the data to models for charge migration, differential capacitance, and adsorption allowed extraction of both charge concentration and two kinetic parameters that characterize the rate of adsorption and desorption. Above 10mM the ratio of charge carriers per surfactant molecule was 22ppm for Span 20, 3ppm for Span 80, and 0.2ppm for Span 85. A higher number of charge carriers per molecule of surfactant was associated with larger micelles. The adsorption rate constants were independent of surfactant concentration while the desorption rate constants were proportional to the surfactant concentration. This dependence indicated that uncharged surfactant, whether in micelles or not, participated in the desorption of charge. Predictions of the adsorption/desorption model for large constant electric fields agreed qualitatively with data from the literature (Karvar et al., 2014). PMID:26905337

  8. Spin fluctuations of nonequilibrium electrons and excitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Glazov, M. M.

    2016-03-01

    Effects that are related to deviations from thermodynamic equilibrium have a special place in modern physics. Among these, nonequilibrium phenomena in quantum systems attract the highest interest. The experimental technique of spin-noise spectroscopy has became quite widespread, which makes it possible to observe spin fluctuations of charge carriers in semiconductors under both equilibrium and nonequilibrium conditions. This calls for the development of a theory of spin fluctuations of electrons and electron-hole complexes for nonequilibrium conditions. In this paper, we consider a range of physical situations where a deviation from equilibrium becomes pronounced in the spin noise. A general method for the calculation of electron and exciton spin fluctuations in a nonequilibrium state is proposed. A short review of the theoretical and experimental results in this area is given.

  9. The kinetics of the bimolecular A+B --> 0 reaction in condensed matter: Effects of non-equilibrium charge screening

    NASA Astrophysics Data System (ADS)

    Kuzovkov, V. N.; Kotomin, E. A.; von Niessen, W.

    1996-12-01

    The kinetics of the bimolecular A+B→0 reaction between charged reactants is studied in two dimensions, i.e., on a surface. The theory is based on the Kirkwood superposition approximation for three-particle densities and the self-consistent treatment of the electrostatic interactions defined by the non-uniform spatial distribution of similar and dissimilar reactants. Special attention is paid to pattern formation and many-particle effects arising from reaction-induced formation of loose domains containing similar reactants only. It is shown that the critical exponent α characterizing the algebraic concentration decay law, n(t)∝t-α, differs strongly between symmetric (DA=DB) and asymmetric (DA=0) reactant mobilities. This effect is abnormal from the point of view of standard chemical kinetics. It arises directly from the specific spatial distribution in the system as in ``raisins A in a dough B.'' At long reaction times the asymptotics of the interaction potentials is of non-equilibrium type at large relative distances. The accumulation kinetics in the presence of a permanent source is studied. Results of the microscopic formalism are compared with a previous mesoscopic theory.

  10. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 41 Public Contracts and Property Management 4 2011-07-01 2011-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  11. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 41 Public Contracts and Property Management 4 2014-07-01 2014-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  12. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 41 Public Contracts and Property Management 4 2010-07-01 2010-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  13. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 41 Public Contracts and Property Management 4 2012-07-01 2012-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  14. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 41 Public Contracts and Property Management 4 2013-07-01 2012-07-01 true How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and Property Management Federal Travel Regulation...

  15. Flexible cobalt-phthalocyanine thin films with high charge carrier mobility

    NASA Astrophysics Data System (ADS)

    Singh, Ajay; Kumar, Arvind; Kumar, Ashwini; Samanta, Soumen; Debnath, Anil K.; Jha, Purushottam; Prasad, Rajeshwar; Salmi, Zakaria; Nowak, Sophie; Chehimi, Mohamed M.; Aswal, Dinesh K.; Gupta, Shiv K.

    2012-11-01

    The structural and charge transport characteristics of cobalt phthalocyanine (CoPc) films deposited on flexible bi-axially oriented polyethylene terephthalate (BOPET) substrates are investigated. CoPc films exhibited a preferential (200) orientation with charge carrier mobility of ˜118 cm2 V-1 s-1 (at 300 K). These films exhibited a reversible resistance changes upon bending them to different radius of curvature. The charge transport in CoPc films is governed by a bias dependent crossover from ohmic (J-V) to trap-free space-charge limited conduction (J-V2). These results demonstrate that CoPc films on flexible BOPET having high mobility and high mechanical flexibility are a potential candidate for flexible electronic devices.

  16. Flexible cobalt-phthalocyanine thin films with high charge carrier mobility

    SciTech Connect

    Singh, Ajay; Kumar, Arvind; Kumar, Ashwini; Samanta, Soumen; Debnath, Anil K.; Jha, Purushottam; Prasad, Rajeshwar; Aswal, Dinesh K.; Gupta, Shiv K.; Salmi, Zakaria; Nowak, Sophie; Chehimi, Mohamed M.

    2012-11-26

    The structural and charge transport characteristics of cobalt phthalocyanine (CoPc) films deposited on flexible bi-axially oriented polyethylene terephthalate (BOPET) substrates are investigated. CoPc films exhibited a preferential (200) orientation with charge carrier mobility of {approx}118 cm{sup 2} V{sup -1} s{sup -1} (at 300 K). These films exhibited a reversible resistance changes upon bending them to different radius of curvature. The charge transport in CoPc films is governed by a bias dependent crossover from ohmic (J-V) to trap-free space-charge limited conduction (J-V{sup 2}). These results demonstrate that CoPc films on flexible BOPET having high mobility and high mechanical flexibility are a potential candidate for flexible electronic devices.

  17. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  18. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    PubMed Central

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-01-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery. PMID:26043147

  19. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    NASA Astrophysics Data System (ADS)

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery.

  20. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    SciTech Connect

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  1. Investigation of optically injected charge carrier dynamics in silicon wafers using terahertz spectroscopic imaging

    NASA Astrophysics Data System (ADS)

    Arnold, Thomas; De Biasio, Martin; Muehleisen, Wolfgang; Leitner, Raimund

    2012-06-01

    Terahertz (THz) time-domain spectroscopy has proven to be a promising technology for a wide range of applications, such as inspection of nished products or materials, quality control, biomedical imaging and diagnostics, counterfeit detection and characterization of semiconductors. This paper investigates the applicability of THz time-domain spectroscopy for the characterization of silicon solar cell properties such as: conductivity, charge carrier mobility and density. Moreover, the possibilities for THz spectroscopy and imaging for the defect analysis in semiconductor and photovoltaic materials are investigated. THz-pump/THz-probe measurements were carried out on silicon wafers which were illuminated by a halogen light source to inject free charge carriers. Initial results indicate that THz time-domain spectroscopy is a promising technique for the characterization of silicon wafers for the photovoltaic industry.

  2. Dynamic charge-carrier-mobility-mediated holography in thin layers of photoconducting polymers

    NASA Astrophysics Data System (ADS)

    Bartkiewicz, S.; Miniewicz, A.; Sahraoui, B.; Kajzar, F.

    2002-11-01

    The dynamic holography technique is proposed for the measurement of the charge-carrier-mobility in thin layers of a photoconducting polymer, used in optically addressed liquid-crystal spatial light modulators. The photorefractive properties of these modulators are studied under short-pulse (20 ps, 532 nm) laser illumination conditions and the charge mobility in the photoconducting polymer (muh=10-7 cm2/V s) is obtained from the temporal evolution of intensity of the first-order diffracted beam. A mechanism responsible for the grating formation is proposed and discussed.

  3. Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

    SciTech Connect

    Belyakov, V. A. Konakov, A. A.; Burdov, V. A.

    2010-11-15

    The rate of tunnel migration of excited charge carriers (electrons and holes) in the array of silicon nanocrystals doped with phosphorus is calculated. It is shown that, starting from certain phosphorus concentrations dependent on the relation between the dimensions of the emitting and accepting nanocrystals, the rate of tunneling of electrons sharply decreases (by several orders of magnitude) and becomes lower than the rate of interband radiative recombination

  4. Collection of photogenerated charge carriers in small-pitched infrared photovoltaic focal plane arrays

    NASA Astrophysics Data System (ADS)

    Chekanova, Galina V.; Drugova, Albina A.; Kholodnov, Viacheslav; Nikitin, Mikhail S.

    2010-10-01

    Technology of infrared (IR) photovoltaic (PV) focal plane arrays (FPA) covering spectral range from 1.6 to 14 μm gradually moves from simple quasi-matrix (linear) arrays like as 4×288 pixels to large format high definition arrays 1280×1024 pixels and more. Major infrared detector materials for PV technology are InSb and its alloys and ternary alloys Hg1-xCdxTe. Progress in IR PV technology was provided in last decade by serious improvement in material growing techniques. Increasing of PV array format is related always to decreasing of pixel size and spacing between neighbor pixels to minimal size reasonable from point of view of infrared physics. So pitch is small (15-25 μm) in large format arrays. Ambipolar diffusion length of photogenerated charge carriers can exceed pitch many times in high quality absorption layers of PV arrays. It means that each pixel can collect excess charge carriers generated far from n+-p junction border. Optimization of resolution, filling factor and cross-talking level of small-pitched PV FPA requires comprehensive estimation of photodiode's (PD) pixel performance depending on pixel and array design, material properties and operating conditions. Objective of the present work was to develop general approach to estimate collection of photogenerated charge carriers in small-pitched arrays.

  5. Crystal structure and charge carrier concentration of W 18O 49

    NASA Astrophysics Data System (ADS)

    Viswanathan, K.; Brandt, K.; Salje, E.

    1981-01-01

    The electrical resistivity of the tungsten oxide, W 18O 49, is 1.75 · 10 -3 Ω cm along the needle axis. The charge carrier density, as determined by reflectivity measurements, is 1.87 · 10 22 cm -3, thereby indicating that most of the charge carriers are delocalized. Hence the smaller conductivity along the needle axis than that expected for such charge carrier concentrations must be found in the structure, which has been refined using the data collected with an automatic diffractometer. The structure consists of WO 6 and WO 7 polyhedra which are linked along edges and/or corners. However, as the linkage parallel to b takes place only by sharing corners, an anisotropy in the electrical conductivity may be expected. Another explanation for the smaller conductivity may be found in the occurrence of defects such as tunnels in the structure, which may scatter the electrons. The refinement shows that the tungsten positions, determined by Magneli ( Arkiv Kemi1, 223 (1950)), are essentially correct; but the positions of the oxygens, especially two of them, differ considerably. This results in one of the tungsten atoms getting an additional coordinating oxygen, the coordination number thereby becoming seven.

  6. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    NASA Astrophysics Data System (ADS)

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-11-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed.

  7. Structural influences on charge carrier dynamics for small-molecule organic photovoltaics

    SciTech Connect

    Wang, Zhiping Shibata, Yosei; Yamanari, Toshihiro; Matsubara, Koji; Yoshida, Yuji; Miyadera, Tetsuhiko; Saeki, Akinori; Seki, Shu; Zhou, Ying

    2014-07-07

    We investigated the structural influences on the charge carrier dynamics in zinc phthalocyanine/fullerene (ZnPc/C{sub 60}) photovoltaic cells by introducing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and 2,5-bis(4-biphenylyl)-bithiophene (BP2T) between indium tin oxide and ZnPc layers. ZnPc films can be tuned to be round, long fiber-like, and short fiber-like structure, respectively. Time-resolved microwave conductivity measurements reveal that charge carrier lifetime in ZnPc/C{sub 60} bilayer films is considerably affected by the intra-grain properties. Transient photocurrent of ZnPc single films indicated that the charge carriers can transport for a longer distance in the long fiber-like grains than that in the round grains, due to the greatly lessened grain boundaries. By carefully controlling the structure of ZnPc films, the short-circuit current and fill factor of a ZnPc/C{sub 60} heterojunction solar cell with BP2T are significantly improved and the power conversion efficiency is increased to 2.6%, which is 120% larger than the conventional cell without BP2T.

  8. Structural influences on charge carrier dynamics for small-molecule organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wang, Zhiping; Miyadera, Tetsuhiko; Saeki, Akinori; Zhou, Ying; Seki, Shu; Shibata, Yosei; Yamanari, Toshihiro; Matsubara, Koji; Yoshida, Yuji

    2014-07-01

    We investigated the structural influences on the charge carrier dynamics in zinc phthalocyanine/fullerene (ZnPc/C60) photovoltaic cells by introducing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and 2,5-bis(4-biphenylyl)-bithiophene (BP2T) between indium tin oxide and ZnPc layers. ZnPc films can be tuned to be round, long fiber-like, and short fiber-like structure, respectively. Time-resolved microwave conductivity measurements reveal that charge carrier lifetime in ZnPc/C60 bilayer films is considerably affected by the intra-grain properties. Transient photocurrent of ZnPc single films indicated that the charge carriers can transport for a longer distance in the long fiber-like grains than that in the round grains, due to the greatly lessened grain boundaries. By carefully controlling the structure of ZnPc films, the short-circuit current and fill factor of a ZnPc/C60 heterojunction solar cell with BP2T are significantly improved and the power conversion efficiency is increased to 2.6%, which is 120% larger than the conventional cell without BP2T.

  9. A charge carrier transport model for donor-acceptor blend layers

    NASA Astrophysics Data System (ADS)

    Fischer, Janine; Widmer, Johannes; Kleemann, Hans; Tress, Wolfgang; Koerner, Christian; Riede, Moritz; Vandewal, Koen; Leo, Karl

    2015-01-01

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C60 in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (Et = 0.14 eV, Nt = 1.2 × 1018 cm-3) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.

  10. A charge carrier transport model for donor-acceptor blend layers

    SciTech Connect

    Fischer, Janine Widmer, Johannes; Koerner, Christian; Vandewal, Koen; Leo, Karl; Kleemann, Hans; Tress, Wolfgang; Riede, Moritz

    2015-01-28

    Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C{sub 60} in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for the characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (E{sub t} = 0.14 eV, N{sub t} = 1.2 × 10{sup 18 }cm{sup −3}) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.

  11. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    PubMed Central

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-01-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed. PMID:26548567

  12. Improved charge carrier separation in barium tantalate composites investigated by laser flash photolysis.

    PubMed

    Schneider, Jenny; Nikitin, Konstantin; Wark, Michael; Bahnemann, Detlef W; Marschall, Roland

    2016-04-20

    Charge carrier dynamics in phase pure Ba5Ta4O15 and in a Ba5Ta4O15-Ba3Ta5O15 composite have been studied by means of diffuse reflectance laser flash photolysis spectroscopy in the presence and absence of an electron donor, in order to reveal the reason for the improved photocatalytic performance of the latter. For the first time the transient absorption of trapped electrons with a maximum at around 650 nm and of trapped holes with a transient absorption maximum at around 310 nm is reported for tantalates. The decay kinetics of the photogenerated charge carriers could be fitted by second order reaction kinetics, and the direct recombination of the trapped electrons with the trapped holes was proven. In the absence of an electron donor, no difference in the decay behavior between the phase pure material and the composite material is found. In the presence of methanol, for the pure phase Ba5Ta4O15 the recombination of the charge carriers could not be prevented and the trapped electrons also recombine with the ˙CH2OH radical formed via the methanol oxidation by the trapped holes. However, in the composite, the electron can be stored in the system, the ˙CH2OH radical injects an electron into the conduction band of the second component of the composite, i.e., Ba3Ta5O15. Thus, the electrons are available for an extended period to induce reduction reactions. PMID:26732364

  13. Optical generation of free charge carriers in thin films of tin oxide

    SciTech Connect

    Zhurbina, I. A. Tsetlin, O. I.; Timoshenko, V. Yu.

    2011-02-15

    The methods of infrared absorption spectroscopy and Raman spectroscopy are used to study nanocrystalline SnO{sub x} films (1 {<=} x {<=} 2) prepared by thermal oxidation of metallic tin layers. A monotonic decrease in the transmittance of films in the infrared region has been observed as a result of exposure of the films to light with the wavelength of 380 nm at room temperature. The effect is at a maximum for the samples with x Almost-Equal-To 2 and is observed for {approx}10 min after switching off of illumination. The mentioned variations in optical properties, similarly to those observed in the case of heating of the samples in the dark, are accounted for by an increase in the concentration of free charge carriers (electrons) in nanocrystals of tin dioxide. The data of infrared spectroscopy and the Drude model are used to calculate the concentrations of photogenerated charge carriers ({approx}10{sup 19} cm{sup -3}); variations in these concentrations in the course of illumination and after switching off of illumination are determined. Mechanisms of observed photogeneration of charge carriers in SnO{sub x} films and possible applications of this effect to gas sensors are discussed.

  14. Electrochemical characteristics of ideal polarizable interfaces with limited number of charge carriers

    NASA Astrophysics Data System (ADS)

    Přibyl, Michal; Slouka, Zdeněk

    2015-11-01

    Recent progress in material chemistry and surface engineering has led to emergence of new electrode materials with unique physical and electrochemical properties. Here, we introduce a physical model describing charging of ideal polarizable electrode-electrolyte interface where the electrode is characterized by a limited capacity to store charge. The analytical model treats the electrode and electrolyte phases as independent nonlinear capacitors that are eventually coupled through the condition of equality of the total stored electrical charge opposite in sign. Gouy-Chapman and condensed layer theories applied to a general 1 :n valent electrolyte are used to predict dependencies of differential capacitance of the electrolyte phase and surface concentration of the electrical charge on the applied potential. The model of the nonlinear capacitor for the electrode phase is described by a theory of electron donors and acceptors present in conductive solids as a result of thermal fluctuations. Both the differential capacitance and the surface concentration of the electrical charge in the electrode are evaluated as functions of the applied potential and related to the capacity of the electrode phase to accumulate charge and its ability to form electron donors and acceptors. The knowledge of capacitive properties of both phases allows to predict electrochemical characteristics of ideal polarizable interfaces, e.g., current responses in linear sweep voltammetry. The coupled model also shows significant potential drops in the electrode comparable to those in the electrolyte phase for materials with low charge carrier concentrations.

  15. In-situ imaging of charge carriers in an electrochemical cell.

    SciTech Connect

    Gerald, R. E. II

    1998-01-30

    A toroid cavity nuclear magnetic resonance (NMR) detector capable of quantitatively recording radial concentration profiles, diffusion constants, displacements of charge carriers, and radial profiles of spin-lattice relaxation time constants was employed to investigate the charge/discharge cycle of a solid-state electrochemical cell. One-dimensional radial concentration profiles (1D-images) of ions solvated in a polyethylene oxide matrix were recorded by {sup 19}F and {sup 7}Li NMR for several cells. A sequence of {sup 19}F NMR images, recorded at different stages of cell polarization, revealed the evolution of a region of the polymer depleted of charge carriers. From these images it is possible to extract the transference number for the Li{sup +} ion. Spatially localized diffusion coefficients and spin-lattice relaxation time constants can be measured simultaneously for the ions in the polymer electrolyte by a spin-labeling method that employs the radial B{sub 1}-field gradient of the toroid cavity. A spatial resolution of 7 {micro}m near the working electrode was achieved with a gradient strength of 800 gauss/cm. With this apparatus, it is also possible to investigate novel intercalation anode materials for lithium ion storage. These materials are coated onto the working electrode in a thin film. The penetration depth of lithium cations in these films can be imaged at different times in the charge/discharge cycle of the battery.

  16. Revealing the ultrafast charge carrier dynamics in organo metal halide perovskite solar cell materials using time resolved THz spectroscopy

    NASA Astrophysics Data System (ADS)

    Ponseca, C. S., Jr.; Sundström, V.

    2016-03-01

    Ultrafast charge carrier dynamics in organo metal halide perovskite has been probed using time resolved terahertz (THz) spectroscopy (TRTS). Current literature on its early time characteristics is unanimous: sub-ps charge carrier generation, highly mobile charges and very slow recombination rationalizing the exceptionally high power conversion efficiency for a solution processed solar cell material. Electron injection from MAPbI3 to nanoparticles (NP) of TiO2 is found to be sub-ps while Al2O3 NPs do not alter charge dynamics. Charge transfer to organic electrodes, Spiro-OMeTAD and PCBM, is sub-ps and few hundreds of ps respectively, which is influenced by the alignment of energy bands. It is surmised that minimizing defects/trap states is key in optimizing charge carrier extraction from these materials.

  17. Subsurface Imaging and Sensing of Charge Carrier Movements in the Earth’s Crust

    NASA Astrophysics Data System (ADS)

    Dahlgren, R.; Freund, F. T.; Lazarus, M.; Wang, J. S.; Rekenthaler, D.; Peters, R. D.; Duma, G.

    2009-12-01

    The DUSEL facility will enable unique opportunities for field experiments that would otherwise not be possible at surface facilities (Lesko, K.T., TAUP, 2007) and support a host of undergraduate and graduate educational projects. In this presentation, some of the proposed geophysics experiments will be described as part of the subsurface Imaging and Sensing (SIS) project to study charge carrier movement in crustal rock as a function of various perturbations. The electric conductivity of the Earth’s crust is dominated by positive hole charge carriers, e.g. mobile electron vacancy defects (EVD) in the oxygen anion sublattice of minerals that make up the bulk of crustal rocks. We are interested in (i) coupling of fundamental processes linked to the activation of additional EVDs in rocks deep in the crust subjected to tectonic stresses and the outflow of these charge carriers into the surrounding rocks, (ii) their manifestation across the electromagnetic spectrum and other measuands, (iii) induced forces that arise when these charge carriers are subjected to the episodic or daily magnetic field variations coming from geomagnetic storms or from the ionospheric current vortex, and (iv) in the movement of positive holes in the shallow crust when a thunderstorm system drifts overhead, dragging along a charge cloud in the ground. We propose to conduct active rock stressing experiments in situ using expanding grout technique (performing electrical, electromagnetic, and VolksMeter tilt measurements) and to monitor the electric and magnetic field variations penetrating into the Earth’s crust. Additionally optical phenomena will be investigated (anomalous infrared signatures, visible light arising from atomic oxygen and corona discharge, and infrared imaging). If budget permits, measurement of changes of acoustic velocity, evolution of chemical species (H2, O*, Rn, etc) and radar reflectivity as a function of stresses will also be attempted. We propose to study the charge

  18. Nature and the Sign of Stress-Activated Electronic Charge Carriers in Rocks

    NASA Astrophysics Data System (ADS)

    Freund, F.

    2013-12-01

    When rocks are subjected to increasing uniaxial stress, highly mobile charge carriers become activated, which have the remarkable ability to flow out of the stressed rock volume, spreading into and through adjacent less stressed or unstressed rocks. Two basic questions arise: (i) What is the nature - and the sign - of these charge carriers and (ii) How do they exist in the rocks before being activated by stress? A large body of evidence is available that points to a positive sign, consistent with defect electrons, which (in semiconductor parlance) are called 'holes'. Holes that reside in the oxygen anion sublattice, associated with O 2sp-type energy states at the upper edge of the valence band, are called 'positive holes'. The positive holes exist in rocks in form of dormant, electrically inactive peroxy defects. Ever so slight deformation, leading to grain-grain sliding, can break the peroxy bonds and activate positive holes. Electrons that are co-activated by the same process cannot flow out of the stressed rock volume into the unstressed rocks. This leads to charge separation and, hence, to a potential difference similar to a battery voltage. In order to experimentally confirm the positive sign of the positive hole charge carriers flowing out of a given stressed rock volume, certain rules have to be obeyed. If not, unreliable results may be obtained, even negative outflow currents, seemingly inconsistent with the postulated positive sign of the positive hole charge carriers. Such errors can be avoided by taking into account that the charge outflow occurs in response to a 'battery potential', V, rapidly evolving between stressed and unstressed or less stressed parts of the rock. The current I given by Ohm's Law, I=V/R, is then limited by the internal resistance R. A second complicating factor arises from the fact that, as the positive holes are stress-activated and begin to flow out, they simultaneously recombine, returning to the dormant state. The ensuing

  19. Excited state and charge-carrier dynamics in perovskite solar cell materials.

    PubMed

    Ponseca, Carlito S; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-02-26

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research. PMID:26820442

  20. Order induced charge carrier mobility enhancement in columnar liquid crystal diodes.

    PubMed

    Eccher, Juliana; Faria, Gregório C; Bock, Harald; von Seggern, Heinz; Bechtold, Ivan H

    2013-11-27

    Discotic molecules comprising a rigid aromatic core and flexible side chains have been promisingly applied in OLEDs as self-organizing organic semiconductors. Due to their potentially high charge carrier mobility along the columns, device performance can be readily improved by proper alignment of columns throughout the bulk. In the present work, the charge mobility was increased by 5 orders of magnitude due to homeotropic columnar ordering induced by the boundary interfaces during thermal annealing in the mesophase. State-of-the-art diodes were fabricated using spin-coated films whose homeotropic alignment with formation of hexagonal germs was observed by polarizing optical microscopy. The photophysical properties showed drastic changes at the mesophase-isotropic transition, which is supported by the gain of order observed by X-ray diffraction. The electrical properties were investigated by modeling the current-voltage characteristics by a space-charge-limited current transport with a field dependent mobility. PMID:24191748

  1. Excited state and charge-carrier dynamics in perovskite solar cell materials

    NASA Astrophysics Data System (ADS)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  2. Equilibrium and non-equilibrium charge-state distributions of 2 MeV/u sulfur ions passing through carbon foils

    NASA Astrophysics Data System (ADS)

    Imai, M.; Sataka, M.; Kawatsura, K.; Takahiro, K.; Komaki, K.; Shibata, H.; Sugai, H.; Nishio, K.

    2009-08-01

    Both equilibrium and non-equilibrium charge-state distributions for 2.0 MeV/u sulfur ions after passing through carbon foils were studied experimentally. For the equilibrium charge-state distribution, incident ions of S 7+, S 12+, S 14+ and S 16+ were injected into carbon foils 54, 98, 150 and 200 μg/cm 2 in thickness, whereas for the non-equilibrium distributions, new measurements for S 15+ and S 16+ incidences were made through carbon foils of 0.9-10 μg/cm 2 to supplement our previous experiments regarding S 6+-S 14+ incidences [M. Imai, M. Sataka, K. Kawatsura, K. Takahiro, K. Komaki, H. Shibata, H. Sugai, K. Nishio, Nucl. Instr. and Meth. B 230 (2005) 63; M. Imai, M. Sataka, K. Kawatsura, K. Takahiro, K. Komaki, H. Shibata, H. Sugai, K. Nishio, Nucl. Instr. and Meth. B 256 (2007) 11]. Mean charge states for S 6+-S 14+ incidences as functions of the penetration thickness merged at 6.9 μg/cm 2 and changed together until reaching equilibrium at around 100 μg/cm 2, while those for S 15+ and S 16+ incidences took different paths to equilibrium, which was also the case for distribution widths for S 6+-S 14+, S 15+ and S 16+ incidences. An equilibrium mean charge state of 12.68 and distribution width of 1.11 were attained with equilibrium charge distributions between 6+ and 16+.

  3. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    PubMed

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells. PMID:27176547

  4. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    NASA Astrophysics Data System (ADS)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  5. Kinetics of photo-activated charge carriers in Sn:CdS

    NASA Astrophysics Data System (ADS)

    Patidar, Manju Mishra; Panda, Richa; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V.

    2016-05-01

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  6. Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

    PubMed

    Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

    2015-02-17

    CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production

  7. Carriers

    MedlinePlus

    ... for those known to be at risk for genetic diseases. Reproductive Choices For couples who are carriers, reproductive decisions can be sensitive. A number of options are available, such as adoption, prenatal testing, and pre-implantation genetic diagnosis (PGD). PGD screens ...

  8. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    NASA Astrophysics Data System (ADS)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-07-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid.

  9. Optical detection of charge carriers in multilayer organic light-emitting diodes: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Book, K.; Nikitenko, V. R.; Bässler, H.; Elschner, A.

    2001-03-01

    We have investigated a multilayer organic light-emitting diode with 1,3,5-tris (N,N-bis-(4-methoxyphenyl)aminophenyl)-benzene acting as the hole transporting layer (HTL) and tris (8-hydroxy-quinolinolato) aluminum (Alq3) as the electron transporting layer. Positive charge carriers in the HTL were detected optically as a function of the applied bias. It was found that a hole injecting layer, consisting of 3,4 polyethylene-dioxy-thiophene doped with polystyrenesulfonate, forms an ohmic contact to the HTL by inducing a thin layer of holes in the interfacial region. An analytical model is developed to describe the observed carrier concentrations as well as the current-brightness-voltage characteristics quantitatively.

  10. Field-direction control of the type of charge carriers in nonsymmorphic IrO2

    NASA Astrophysics Data System (ADS)

    Uchida, M.; Sano, W.; Takahashi, K. S.; Koretsune, T.; Kozuka, Y.; Arita, R.; Tokura, Y.; Kawasaki, M.

    2015-06-01

    In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to symmetry requirements. Following a simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically quantify their Hall effect for the corresponding field directions. The results clearly demonstrate that the dominant carrier type can be intrinsically controlled by the magnetic field direction, as also evidenced by first-principles calculations revealing nontrivial momentum dependence of the group velocity and mass tensor on the folded Fermi surfaces and its anisotropic nature for the field direction.

  11. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    NASA Astrophysics Data System (ADS)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  12. Charge-Carrier Dynamics in Organic-Inorganic Metal Halide Perovskites.

    PubMed

    Herz, Laura M

    2016-05-27

    Hybrid organic-inorganic metal halide perovskites have recently emerged as exciting new light-harvesting and charge-transporting materials for efficient photovoltaic devices. Yet knowledge of the nature of the photogenerated excitations and their subsequent dynamics is only just emerging. This article reviews the current state of the field, focusing first on a description of the crystal and electronic band structure that give rise to the strong optical transitions that enable light harvesting. An overview is presented of the numerous experimental approaches toward determining values for exciton binding energies, which appear to be small (a few milli-electron volts to a few tens of milli-electron volts) and depend significantly on temperature because of associated changes in the dielectric function. Experimental evidence for charge-carrier relaxation dynamics within the first few picoseconds after excitation is discussed in terms of thermalization, cooling, and many-body effects. Charge-carrier recombination mechanisms are reviewed, encompassing trap-assisted nonradiative recombination that is highly specific to processing conditions, radiative bimolecular (electron-hole) recombination, and nonradiative many-body (Auger) mechanisms. PMID:26980309

  13. Temporary Charge Carrier Separation Dominates the Photoluminescence Decay Dynamics of Colloidal CdSe Nanoplatelets.

    PubMed

    Rabouw, Freddy T; van der Bok, Johanna C; Spinicelli, Piernicola; Mahler, Benoît; Nasilowski, Michel; Pedetti, Silvia; Dubertret, Benoît; Vanmaekelbergh, Daniël

    2016-03-01

    Luminescent colloidal CdSe nanoplatelets with atomically defined thicknesses have recently been developed, and their potential for various applications has been shown. To understand their special properties, experiments have until now focused on the relatively short time scales of at most a few nanoseconds. Here, we measure the photoluminescence decay dynamics of colloidal nanoplatelets on time scales up to tens of microseconds. The excited state dynamics are found to be dominated by the slow (∼μs) dynamics of temporary exciton storage in a charge-separated state, previously overlooked. We study the processes of charge carrier separation and exciton recovery in pure CdSe nanoplatelets as well as in core-crown and core-shell CdSe/CdS nanoplatelets with high ensemble quantum yields of 50%, and discuss the implications. Our work highlights the importance of reversible charge carrier trapping and experiments over a wide range of time scales for the understanding of colloidal nanoemitters in general and nanoplatelets in particular. PMID:26863992

  14. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  15. Improvement of the charge-carrier transport property of polycrystalline CdTe for digital fluoroscopy

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; Heo, Y. J.; Kim, D. K.; Kim, J. S.; Shin, J. W.; Lee, G. H.; Nam, S. H.

    2014-05-01

    Minimizing the radiation impact to the patient is currently an important issue in medical imaging. Particularly, in case of X-ray fluoroscopy, the patient is exposed to high X-ray dose because a large number of images is required in fluoroscopic procedures. In this regard, a direct-conversion X-ray sensor offers the advantages of high quantum efficiency, X-ray sensitivity, and high spatial resolution. In particular, an X-ray sensor in fluoroscopy operates at high frame rate, in the range from 30 to 60 image frames per second. Therefore, charge-carrier transport properties and signal lag are important factors for the development of X-ray sensors in fluoroscopy. In this study, in order to improve the characteristics of polycrystalline cadmium telluride (CdTe), CdTe films were prepared by thermal evaporation and RF sputtering. The deposition was conducted to form a CdTeO3 layer on top of a CdTe film. The role of CdTeO3 is not only to improve the charge-carrier transport by increasing the life-time but also to reduce the leakage current of CdTe films by acting as a passivation layer. In this paper, to establish the effect of a thin oxide layer on top of a CdTe film, the morphological and electrical properties including charge-carrier transport and signal lag were investigated by means of X-ray diffraction, X-ray photoemission spectroscopy, and resistivity measurements.

  16. Influence of defects on excess charge carrier kinetics studied by transient PC and transient PA

    SciTech Connect

    Feist, H.; Kunst, M.; Swiatkowski, C.

    1997-07-01

    By comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250 C additionally show a lower effective electron mobility, i.e., a broader conduction band tail.

  17. Evaluation of anisotropic charge carrier mobility of perylene single crystals by time-of-flight method

    NASA Astrophysics Data System (ADS)

    Kougo, Junichi; Ishikawa, Ken

    2016-03-01

    The charge carrier mobilities along the vertical and lateral directions of perylene platelet single crystals were measured by the time-of-flight (TOF) method. In the lateral directional measurement, the entire region between electrodes was irradiated to obtain measurable signals. The transient photocurrent was different from the conventional TOF measurements; hence, we developed an analytic method for lateral directional measurement. The electron mobilities along the thickness and lateral directions were 0.33 and 2.0 cm2·V-1·s-1 and the hole mobilities were 0.12 and 0.6 cm2·V-1·s-1, respectively.

  18. Enhanced charge carrier generation in dye sensitized solar cells by nanoparticle plasmons

    NASA Astrophysics Data System (ADS)

    Hägglund, Carl; Zäch, Michael; Kasemo, Bengt

    2008-01-01

    An interesting possibility to improve the conversion and cost efficiencies of photovoltaic solar cells is to exploit the large optical cross sections of localized (nanoparticle) surface plasmon resonances (LSPRs). We have investigated this prospect for dye sensitized solar cells. Photoconductivity measurements were performed on flat TiO2 films, sensitized by a combination of dye molecules and arrays of nanofabricated elliptical gold disks. An enhanced dye charge carrier generation rate was found and shown to derive from the LSPR contribution by means of the polarization dependent resonance frequency in the anisotropic, aligned gold disks.

  19. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  20. Equilibrium and non-equilibrium charge-state distributions of 2.0 MeV/u carbon ions passing through carbon foils

    NASA Astrophysics Data System (ADS)

    Imai, M.; Sataka, M.; Matsuda, M.; Okayasu, S.; Kawatsura, K.; Takahiro, K.; Komaki, K.; Shibata, H.; Nishio, K.

    2015-07-01

    Both equilibrium and non-equilibrium charge-state distributions were studied experimentally for 2.0 MeV/u carbon ions after passing through carbon foils. Measured charge-state distribution established the equilibrium at a target thickness of 10 μg/cm2 and this remained unchanged until a maximum target thickness of 98 μg/cm2. The equilibrium charge-state distribution, the equilibrium mean charge-state, and the width and skewness of the equilibrium distribution were compared with predictions using existing semi-empirical formulae as well as simulation results, including the ETACHA code. It was found that charge-state distributions, mean charge states, and distribution widths for C2+, C3+, and C4+ incident ions merged into quasi-equilibrium values at a target thickness of 5.7 μg/cm2 in the pre-equilibrium region and evolved simultaneously to the 'real equilibrium' values for all of the initial charge states, including C5+ and C6+ ions, as previously demonstrated for sulfur projectile ions at the same velocity (Imai et al., 2009). Two kinds of simulation, ETACHA and solution of rate equations taking only single electron transfers into account, were used, and both of them reproduced the measured charge evolution qualitatively. The quasi-equilibrium behavior could be reproduced with the ETACHA code, but not with solution of elementary rate equations.

  1. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    SciTech Connect

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  2. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    NASA Astrophysics Data System (ADS)

    Song, Linze; Shi, Qiang

    2015-05-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  3. Direct Observation of the Hole Carriers in DNA Photoinduced Charge Transport.

    PubMed

    Harris, Michelle A; Mishra, Ashutosh Kumar; Young, Ryan M; Brown, Kristen E; Wasielewski, Michael R; Lewis, Frederick D

    2016-05-01

    The excited state behavior of DNA hairpins possessing a diphenylacetylenedicarboxamide (DPA) linker separated from a single guanine-cytosine (G-C) base pair by zero-to-six adenine-thymine (A-T) base pairs has been investigated. In the case of hairpins with zero or one A-T separating DPA and G, formation of both DPA anion radical (DPA(-•)) and G cation radical (G(+•)) are directly observed and characterized by their transient absorption and stimulated Raman spectra. For hairpins with two or more intervening A-T, the transient absorption spectra of DPA(-•) and the adenine polaron (An(+•)) are observed. In addition to characterization of the hole carriers, the dynamics of each step in the charge separation and charge recombination process as well as the overall efficiency of charge separation have been determined, thus providing a complete account of the mechanism and dynamics of photoinduced charge transport in these DNA hairpins. PMID:27082662

  4. One-carrier thermally stimulated currents and space-charge-limited currents in naphthalene crystals

    NASA Astrophysics Data System (ADS)

    Campos, M.; Mergulhão, S.

    1980-03-01

    Electron trapping in naphthalene is studied by analysis of the space-charge-limited and thermally stimulated currents as a function of applied voltage and temperature. The two methods are used on naphthalene single crystals, with continuous electron injection from a silver contact. The use of the two techniques allows a quantitative determination of the characteristics of deep and shallow traps. Three monomolecular current peaks were observed. Activation energies of 0.5, 0.79, and 1.1 eV, and cross sections of 8.8 × 10-20, 6.9 × 10-16, and 1.0 × 10-18 cm2, were calculated for the corresponding discrete trapping levels of the charge carriers. The behavior observed for space-charge-limited current was a current-voltage characteristic of a single set of traps, with an activation energy of 0.71 eV, and a cross section of 7.1 × 10-16 cm2. The results showed that the use of only space-charge-limited current is not good enough for a characterization of the traps of the material.

  5. Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses

    NASA Astrophysics Data System (ADS)

    Rodrigues, Ana Candida Martins; Nascimento, Marcio Luis Ferreira; Bragatto, Caio Barca; Souquet, Jean-Louis

    2011-12-01

    Conductivity data of the xAgI(1 - x)AgPO3 system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (Tg) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below Tg and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10-4 cm2 V-1 s-1) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO3.

  6. Charge carrier concentration dependence of encounter-limited bimolecular recombination in phase-separated organic semiconductor blends

    NASA Astrophysics Data System (ADS)

    Heiber, Michael C.; Nguyen, Thuc-Quyen; Deibel, Carsten

    2016-05-01

    Understanding how the complex intermolecular configurations and nanostructure present in organic semiconductor donor-acceptor blends impacts charge carrier motion, interactions, and recombination behavior is a critical fundamental issue with a particularly major impact on organic photovoltaic applications. In this study, kinetic Monte Carlo (KMC) simulations are used to numerically quantify the complex bimolecular charge carrier recombination behavior in idealized phase-separated blends. Recent KMC simulations have identified how the encounter-limited bimolecular recombination rate in these blends deviates from the often used Langevin model and have been used to construct the new power mean mobility model. Here, we make a challenging but crucial expansion to this work by determining the charge carrier concentration dependence of the encounter-limited bimolecular recombination coefficient. In doing so, we find that an accurate treatment of the long-range electrostatic interactions between charge carriers is critical, and we further argue that many previous KMC simulation studies have used a Coulomb cutoff radius that is too small, which causes a significant overestimation of the recombination rate. To shed more light on this issue, we determine the minimum cutoff radius required to reach an accuracy of less than ±10 % as a function of the domain size and the charge carrier concentration and then use this knowledge to accurately quantify the charge carrier concentration dependence of the recombination rate. Using these rigorous methods, we finally show that the parameters of the power mean mobility model are determined by a newly identified dimensionless ratio of the domain size to the average charge carrier separation distance.

  7. Temperature dependence of exciton and charge carrier dynamics in organic thin films

    NASA Astrophysics Data System (ADS)

    Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O.

    2011-12-01

    We report on physical mechanisms behind the temperature-dependent optical absorption, photoluminescence (PL), and photoconductivity in spin-coated films of a functionalized anthradithiophene (ADT) derivative, ADT-triethylsilylethynyl (TES)-F, and its composites with C60 and another ADT derivative, ADT-TIPS-CN. Measurements of absorption and PL spectra, PL lifetimes, and transient photocurrent were performed at temperatures between 98 and 300 K as a function of applied electric field. In pristine ADT-TES-F films, absorptive and emissive species were identified to be disordered H aggregates whose properties are affected by static and dynamic disorder. The exciton bandwidths were ≤0.06 and ˜0.115 eV for absorptive and emissive aggregates, respectively, indicative of higher disorder in the emissive species. The exciton in the latter was found to be delocalized over approximately four to five molecules. The PL properties were significantly modified upon adding a guest molecule to the ADT-TES-F host. In ADT-TES-F/C60 composites, the PL was considerably quenched due to photoinduced electron transfer from ADT-TES-F to C60, while in ADT-TES-F/ADT-TIPS-CN blends, the PL was dominated by emission from an exciplex formed between ADT-TES-F and ADT-TIPS-CN molecules. In all materials, the PL quantum yield dramatically decreased as the temperature increased due to thermally activated nonradiative recombination. Considerable electric-field-induced PL quenching was observed at low temperatures at electric fields above ˜105 V/cm due to tunneling into dark states. No significant contribution of ADT-TES-F emissive exciton dissociation to transient photocurrent was observed. In all materials, charge carriers were photogenerated at sub-500-ps time scales, limited by the laser pulse width, with temperature- and electric-field-independent photogeneration efficiency. In ADT-TES-F/C60 (2%) composites, the photogeneration efficiency was a factor of 2-3 higher than that in pristine ADT

  8. Electro-Convective and Non-Equilibrium Electro-Osmotic Instability of Electric Conduction from an Electrolyte Solution into a Charge Selective Solid

    NASA Astrophysics Data System (ADS)

    Rubinstein, Isaak

    2006-03-01

    Electro-convection is reviewed as a mechanism of mixing in the diffusion layer of a strong electrolyte adjacent to a charge-selective solid, such as an ion exchange (electrodialysis) membrane or an electrode. Two types of electro-convection in strong electrolytes may be distinguished: bulk electro-convection , due to the action of the electric field upon the residual space charge of a quasi-electro-neutral bulk solution, and convection induced by electro-osmotic slip, due to electric forces acting in the thin electric double layer of either quasi-equilibrium or non-equilibrium type near the solid/liquid interface. According to recent studies, the latter appears to be the likely source of mixing in the diffusion layer, leading to `over-limiting' conductance in electrodialysis. Electro-convection near a uniform charge selective solid/liquid interface sets on as a result of hydrodynamic instability of one-dimensional steady state electric conduction through such an interface. We discuss instabilities of this kind appearing in the full electro-convective and limiting non-equilibrium electro-osmotic formulations. The short- and long-wave aspects of these instabilities are discussed along with the wave-number selection principles and possible sources of low frequency excess electric noise experimentally observed in these systems.

  9. An autonomous photosynthetic device in which all charge carriers derive from surface plasmons.

    PubMed

    Mubeen, Syed; Lee, Joun; Singh, Nirala; Krämer, Stephan; Stucky, Galen D; Moskovits, Martin

    2013-04-01

    Solar conversion to electricity or to fuels based on electron-hole pair production in semiconductors is a highly evolved scientific and commercial enterprise. Recently, it has been posited that charge carriers either directly transferred from the plasmonic structure to a neighbouring semiconductor (such as TiO₂) or to a photocatalyst, or induced by energy transfer in a neighbouring medium, could augment photoconversion processes, potentially leading to an entire new paradigm in harvesting photons for practical use. The strong dependence of the wavelength at which the local surface plasmon can be excited on the nanostructure makes it possible, in principle, to design plasmonic devices that can harvest photons over the entire solar spectrum and beyond. So far, however, most such systems show rather small photocatalytic activity in the visible as compared with the ultraviolet. Here, we report an efficient, autonomous solar water-splitting device based on a gold nanorod array in which essentially all charge carriers involved in the oxidation and reduction steps arise from the hot electrons resulting from the excitation of surface plasmons in the nanostructured gold. Each nanorod functions without external wiring, producing 5 × 10(13) H₂ molecules per cm(2) per s under 1 sun illumination (AM 1.5 and 100 mW cm(-2)), with unprecedented long-term operational stability. PMID:23435280

  10. Real-time charge carrier motion in P3HT studied with Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Castaneda, Chloe; Zaidi, Alyina; Moscatello, Jason; Aidala, Katherine

    We have developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in organic semiconductor devices. We investigate P3HT (full name) in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin probe microscopy to record the potential over time, we can record how the charge carriers respond to changing the backgate voltage while the source and drain electrodes are grounded. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the P3HT film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We compare P3HT transistors with different fabrication procedures that are expected to change the trap distribution: no silanization of the oxide and no annealing, silanization and no annealing, and both silanization and annealing. By incrementally stepping the gate voltage, we probe different trap depths. The recorded change in potential over time is best fit by a double exponential, suggesting two physical mechanisms involved in screening. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  11. Doping and charge-carrier density effects in the cuprate superconductors

    SciTech Connect

    Tanner, D.B.; Yoon, Y.D.; Zibold, A.

    1996-12-31

    The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5--2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd{sub 2{minus}x}Ce{sub x}CuO{sub 4{minus}y} system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La{sub 2{minus}x}Sr{sub x}CuO{sub 4}. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands. 48 refs., 6 figs., 1 tab.

  12. Proton intercalated two-dimensional WO3 nano-flakes with enhanced charge-carrier mobility at room temperature

    NASA Astrophysics Data System (ADS)

    Zhuiykov, Serge; Kats, Eugene; Carey, Benjamin; Balendhran, Sivacarendran

    2014-11-01

    Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report for the first time H+ intercalated WO3 FETs, made of Q2D nano-flakes, with enhanced charge-carrier mobility exceeding 319 cm2 V-1 s-1 comparable with the charge-carrier mobility of Q2D dichalcogenides MoS2 and WSe2. Analyses indicate that the enhanced electrical properties of the sub-stoichiometric WO3-x depend on the oxygen vacancies in the intercalated nano-flakes. These findings confirmed that Q2D sub-stoichiometric WO3-x is a promising material for various functional FET devices.Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report

  13. Deep localized distortion of alternating bonds and reduced transport of charged carriers in conjugated polymers under photoexcitation

    NASA Astrophysics Data System (ADS)

    Wang, Cong; Jiang, De-Yao; Chen, Ren-Ai; Li, Sheng; George, Thomas F.

    2014-12-01

    In a real bulk heterojunction polymer solar cell, after exciton separation in the heterojunction, the resulting negatively-charged carrier, a polaron, moves along the polymer chain of the acceptor, which is believed to be of significance for the charged carrier transport properties in a polymer solar cell. During the negative polaron transport, due to the external light field, the polaron, which is re-excited and induces deep localization, also forms a new local distortion of the alternating bonds. It is revealed that the excited polaron moves more slowly than the ground-state polaron. Furthermore, the velocity of the polaron moving along the polymer chain is crucially dependent on the photoexcitation. With an increase in the intensity of the optical field, the localization of the excited polaron will be deepened, with a decrease of the polaron's velocity. It is discovered that, for a charged carrier, photoexcitation is a significant factor in reducing the efficiency during the charged carrier transport in polymer solar cells. Mostly, the deep trapping effect of charged carrier in composite conjugated polymer solar cell presents an opportunity for the future application in nanoscale memory and imaging devices.

  14. Bulk charge carrier transport in push-pull type organic semiconductor.

    PubMed

    Karak, Supravat; Liu, Feng; Russell, Thomas P; Duzhko, Volodimyr V

    2014-12-10

    Operation of organic electronic and optoelectronic devices relies on charge transport properties of active layer materials. The magnitude of charge carrier mobility, a key efficiency metrics of charge transport properties, is determined by the chemical structure of molecular units and their crystallographic packing motifs, as well as strongly depends on the film fabrication approaches that produce films with different degrees of anisotropy and structural order. Probed by the time-of-flight and grazing incidence X-ray diffraction techniques, bulk charge carrier transport, molecular packing, and film morphology in different structural phases of push-pull type organic semiconductor, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5yl)benzo[c][1,2,5] thiadiazole), one of the most efficient small-molecule photovoltaic materials to-date, are described herein. In the isotropic phase, the material is ambipolar with high mobilities for a fluid state. The electron and hole mobilities at the phase onset at 210.78 °C are 1.0 × 10(-3) cm(2)/(V s) and 6.5 × 10(-4) cm(2)/(V s), respectively. Analysis of the temperature and electric field dependences of the mobilities in the framework of Gaussian disorder formalism suggests larger energetic and positional disorder for electron transport sites. Below 210 °C, crystallization into a polycrystalline film with a triclinic unit cell symmetry and high degree of anisotropy leads to a 10-fold increase of hole mobility. The mobility is limited by the charge transfer along the direction of branched alkyl side chains. Below 90 °C, faster cooling rates produce even higher hole mobilities up to 2 × 10(-2) cm(2)/(V s) at 25 °C because of the more isotropic orientations of crystalline domains. These properties facilitate in understanding efficient material performance in photovoltaic devices and will guide further development of materials and devices. PMID:25393015

  15. Picosecond dynamics of free carrier populations, space- charge fields, and photorefractive nonlinearities in zincblende semiconductors

    NASA Astrophysics Data System (ADS)

    Stark, Thomas Spencer

    Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power. Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications. In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi- insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high- speed electronic applications. We use a novel transient- grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier

  16. Self-Trapping of Charge Carriers in Semiconducting Carbon Nanotubes: Structural Analysis.

    PubMed

    Adamska, Lyudmyla; Nazin, George V; Doorn, Stephen K; Tretiak, Sergei

    2015-10-01

    The spatial extent of charged electronic states in semiconducting carbon nanotubes with indices (6,5) and (7,6) was evaluated using density functional theory. It was observed that electrons and holes self-trap along the nanotube axis on length scales of about 4 and 8 nm, respectively, which localize cations and anions on comparable length scales. Self-trapping is accompanied by local structural distortions showing periodic bond-length alternation. The average lengthening (shortening) of the bonds for anions (cations) is expected to shift the G-mode frequency to lower (higher) values. The smaller-diameter nanotube has reduced structural relaxation due to higher carbon-carbon bond strain. The reorganization energy due to charge-induced deformations in both nanotubes is found to be in the 30-60 meV range. Our results represent the first theoretical simulation of self-trapping of charge carriers in semiconducting nanotubes, and agree with available experimental data. PMID:26722885

  17. Charge carrier identification in tunneling spectroscopy of core-shell nanocrystals

    NASA Astrophysics Data System (ADS)

    Nguyen, T. H.; Habinshuti, J.; Justo, Y.; Gomes, R.; Mahieu, G.; Godey, S.; Nys, J. P.; Carrillo, S.; Hens, Z.; Robbe, O.; Turrell, S.; Grandidier, B.

    2011-11-01

    Semiconductor PbSe/CdSe core-shell nanocrystals (NCs) in a double barrier tunnel junction have been investigated by means of scanning tunneling spectroscopy at low temperature. From the analysis of the differential conductance peak position as a function of the potential distribution in both potential barriers, we demonstrate a unipolar transport regime for a large amount of NCs. The same charge carriers are injected on both sides of the zero-conductance gap, and the peaks observed at higher energy arise from the charging of the NCs. Similar results are obtained for CdSe/CdS dot-in-rod NCs, indicating that the addition of a shell favors transitions between different charge states rather than single particle excited states. Further characterization of the PbSe/CdSe core-shell NCs by x-ray photoemission spectroscopy reveals that the variations in the transport properties from NC to NC are explained by the occurrence of unprotected PbSe facets that have different orientations in the junction.

  18. Charge carrier dynamics in organic semiconductors and their donor-acceptor composites: Numerical modeling of time-resolved photocurrent

    NASA Astrophysics Data System (ADS)

    Johnson, Brian; Kendrick, Mark J.; Ostroverkhova, Oksana

    2013-09-01

    We present a model that describes nanosecond (ns) time-scale photocurrent dynamics in functionalized anthradithiophene (ADT) films and ADT-based donor-acceptor (D/A) composites. By fitting numerically simulated photocurrents to experimental data, we quantify contributions of multiple pathways of charge carrier photogeneration to the photocurrent, as well as extract parameters that characterize charge transport (CT) in organic films including charge carrier mobilities, trap densities, hole trap depth, and trapping and recombination rates. In pristine ADT films, simulations revealed two competing charge photogeneration pathways: fast, occurring on picosecond (ps) or sub-ps time scales with efficiencies below 10%, and slow, which proceeds at the time scale of tens of nanoseconds, with efficiencies of about 11%-12%, at the applied electric fields of 40-80 kV/cm. The relative contribution of these pathways to the photocurrent was electric field dependent, with the contribution of the fast process increasing with applied electric field. However, the total charge photogeneration efficiency was weakly electric field dependent exhibiting values of 14%-20% of the absorbed photons. The remaining 80%-86% of the photoexcitation did not contribute to charge carrier generation at these time scales. In ADT-based D/A composites with 2 wt.% acceptor concentration, an additional pathway of charge photogeneration that proceeds via CT exciton dissociation contributed to the total charge photogeneration. In the composite with the functionalized pentacene (Pn) acceptor, which exhibits strong exciplex emission from a tightly bound D/A CT exciton, the contribution of the CT state to charge generation was small, ˜8%-12% of the total number of photogenerated charge carriers, dependent on the electric field. In contrast, in the composite with PCBM acceptor, the CT state contributed about a half of all photogenerated charge carriers. In both D/A composites, the charge carrier mobilities were

  19. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    SciTech Connect

    Perov, A. A. Penyagin, I. V.

    2015-07-15

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible.

  20. Correlation of Crystalline and Structural Properties of C60 Thin Films Grown at Various Temperature with Charge Carrier Mobility

    SciTech Connect

    Singh,T.; Sarciftci, N.; Yang, H.; Yang, L.; Plochberger, B.; Sitter, H.

    2007-01-01

    Transistors fabricated from C{sub 60} films grown by hot wall epitaxy at higher substrate temperature, showed an order of magnitude increased charge carrier mobility up to 6 cm{sup 2}/V s. In this letter, the authors present an extensive study of morphology and crystallinity of the fullerene films using atomic force microscopy and grazing-incidence x-ray diffraction. A clear correlation of crystalline quality of the C{sub 60} film and charge carrier mobility was found. A higher substrate temperature leads to a single crystal-like faceted fullerene crystals. The high crystalline quality solely brings a drastic improvement in the charge carrier mobility. A gate voltage independent mobility is also observed in these devices which can be attributed to the highly conjugated nature of the C{sub 60} thin film.

  1. Charge carrier mobility in poly[methyl(phenyl)silylene] studied by time-resolved terahertz spectroscopy and molecular modelling.

    PubMed

    Němec, Hynek; Kratochvílová, Irena; Kužel, Petr; Šebera, Jakub; Kochalska, Anna; Nožár, Juraj; Nešpůrek, Stanislav

    2011-02-21

    Time-resolved terahertz spectroscopy and combination of quantum chemistry modeling and molecular dynamics simulations were used for the determination of charge carrier mobility in poly[methyl(phenyl)silylene]. Using time-resolved THz spectroscopy we established the on-chain charge carrier drift mobility in PMPSi as 0.02 cm(2) V(-1) s(-1). This value is low due to the formation of polarons: the hole is self-trapped in a potential formed by local chain distortion and the transient THz conductivity spectra show signatures of its oscillations within this potential well. This view is supported by the agreement between experimental and calculated values of the on-chain charge carrier mobility. PMID:21305068

  2. Charge carrier loss mechanisms in CuInS2/ZnO nanocrystal solar cells.

    PubMed

    Scheunemann, Dorothea; Wilken, Sebastian; Parisi, Jürgen; Borchert, Holger

    2016-06-28

    Heterojunction solar cells based on colloidal nanocrystals (NCs) have shown remarkable improvements in performance in the last decade, but this progress is limited to merely two materials, PbS and PbSe. However, solar cells based on other material systems such as copper-based compounds show lower power conversion efficiencies and much less effort has been made to develop a better understanding of factors limiting their performance. Here, we study charge carrier loss mechanisms in solution-processed CuInS2/ZnO NC solar cells by combining steady-state measurements with transient photocurrent and photovoltage measurements. We demonstrate the presence of an extraction barrier at the CuInS2/ZnO interface, which can be reduced upon illumination with UV light. However, trap-assisted recombination in the CuInS2 layer is shown to be the dominant decay process in these devices. PMID:27250665

  3. First measurements of charge carrier density and mobility of in-situ enriched 28Si

    NASA Astrophysics Data System (ADS)

    Ramanayaka, A. N.; Dwyer, K. J.; Kim, Hyun-Soo; Stewart, M. D., Jr.; Pomeroy, J. M.

    Magnetotransport in top gated Hall bar devices is investigated to characterize the electrical properties of in-situ enriched 28Si. Isotopically enriched 28Si is an ideal candidate for quantum information processing devices as the elimination of unpaired nuclear spins improves the fidelity of the quantum information. Using mass filtered ion beam deposition we, in-situ, enrich and deposit epitaxial 28Si, achieving several orders of magnitude better enrichment compared to other techniques. In order to explore the electrical properties and optimize the growth conditions of in-situ enriched 28Si we perform magnetotransport measurements on top gated Hall bar devices at temperatures ranging from 300 K to cryogenic temperatures and at moderate magnetic fields. Here, we report on the charge carrier density and mobility extracted from such experiments, and will be compared among different growth conditions of in-situ enriched 28Si.

  4. Charge carrier dynamics in nanocrystalline Dy substituted ceria based oxygen ion conductors

    NASA Astrophysics Data System (ADS)

    Anirban, Sk.; Dutta, A.

    2016-05-01

    Nano-crystalline Ce1-xDyxO2-δ (x = 0.1-0.5) materials were prepared using the low temperature citrate auto-ignition method. The Rietveld analysis of the XRD data confirmed the single phase cubic fluorite structure. The particle sizes of the sintered samples are in nano range and lattice parameter increases with Dy concentration. Polydispersed and agglomerated particles are observed by SEM. The EDAX spectra show good stoichiometry of the different atoms in the samples. The conductivity is found to have both grain and grain boundary contribution and shows highest value at x= 0.2. The frequency dependence of dielectric permittivity has been analyzed using Havrilliak-Negami formalism. The variation in different electrical properties has been explained by formation defect associates and their interaction with charge carriers.

  5. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    NASA Astrophysics Data System (ADS)

    Rosikhin, Ahmad; Winata, Toto

    2016-04-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 - 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  6. Proton intercalated two-dimensional WO3 nano-flakes with enhanced charge-carrier mobility at room temperature.

    PubMed

    Zhuiykov, Serge; Kats, Eugene; Carey, Benjamin; Balendhran, Sivacarendran

    2014-12-21

    Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO(3-x) is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report for the first time H(+) intercalated WO(3) FETs, made of Q2D nano-flakes, with enhanced charge-carrier mobility exceeding 319 cm(2) V(-1) s(-1) comparable with the charge-carrier mobility of Q2D dichalcogenides MoS(2) and WSe(2). Analyses indicate that the enhanced electrical properties of the sub-stoichiometric WO(3-x) depend on the oxygen vacancies in the intercalated nano-flakes. These findings confirmed that Q2D sub-stoichiometric WO(3-x) is a promising material for various functional FET devices. PMID:25367432

  7. Bimodal behaviour of charge carriers in graphene induced by electric double layer.

    PubMed

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  8. Light-Emitting Quantum Dot Transistors: Emission at High Charge Carrier Densities

    PubMed Central

    2015-01-01

    For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433

  9. Light-emitting quantum dot transistors: emission at high charge carrier densities.

    PubMed

    Schornbaum, Julia; Zakharko, Yuriy; Held, Martin; Thiemann, Stefan; Gannott, Florentina; Zaumseil, Jana

    2015-03-11

    For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting transistor. Electrolyte-gated PbS quantum dot LEFETs exhibit near-infrared electroluminescence from a confined region within the channel, which proves true ambipolar transport in ligand-exchanged quantum dot solids. Unexpectedly, the external quantum efficiencies improve significantly with current density. This effect correlates with the unusual increase of photoluminescence quantum yield and longer average lifetimes at higher electron and hole concentrations in PbS quantum dot thin films. We attribute the initially low emission efficiencies to nonradiative losses through trap states. At higher carrier densities, these trap states are deactivated and emission is dominated by trions. PMID:25652433

  10. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    PubMed

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-01

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance. PMID:26579732

  11. Electrodeless measurement of charge carrier mobility in pentacene by microwave and optical spectroscopy techniques

    NASA Astrophysics Data System (ADS)

    Saeki, Akinori; Seki, Shu; Tagawa, Seiichi

    2006-07-01

    Photoinduced transient conductivity of pentacene thin films prepared by thermal vapor deposition is investigated using time-resolved microwave conductivity (TRMC) measurements, giving intrinsic charge carrier mobility in highly ordered structures without any electrode attached. The real and imaginary conductivity values are analyzed and compared with those predicted by molecular orbital calculations. The effects of substrate surface treatment by hexamethyldisilazane are discussed on the basis of kinetic traces of conductivity and morphology. A mobility of >0.7cm2/Vs was obtained from the TRMC measurements and analysis of transient absorption spectra. The measurement of field-effect-transistor mobility in single-crystal domains requires not only complicated fabrication techniques but also many assumptions on the carrier channels, density, injection, etc. The combination of TRMC and transient optical spectroscopy provides an approach for addressing this issue. The present technique is applicable to a wide variety of organic semiconducting materials. Moreover, it is the only technique revealing the intrinsic potentials of mobility in materials that is supported by complete experimental and quantitative procedures not based on any assumptions.

  12. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    PubMed Central

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  13. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    PubMed Central

    Maragliano, C.; Lilliu, S.; Dahlem, M. S.; Chiesa, M.; Souier, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution. A simple electronic energy model is used for correlating the contact potential difference with the doping concentration in the material. Limitations of this technique are discussed in details and some experimental solutions are proposed. Two-dimensional doping concentration images acquired on radio frequency-sputtered intrinsic zinc oxide thin films with different thickness and deposited under different conditions are reported. We show that results inferred with this technique are in accordance with carrier concentration expected for zinc oxide thin films deposited under different conditions and obtained from resistivity and mobility measurements. PMID:24569599

  14. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    DOE PAGESBeta

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, uponmore » CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.« less

  15. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    SciTech Connect

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, upon CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.

  16. Electric field dependence of charge carrier hopping transport within the random energy landscape in an organic field effect transistor

    NASA Astrophysics Data System (ADS)

    Fishchuk, I. I.; Kadashchuk, A.; Ullah, Mujeeb; Sitter, H.; Pivrikas, A.; Genoe, J.; Bässler, H.

    2012-07-01

    We extended our analytical effective medium theory [Phys. Rev. BPRBMDO0163-182910.1103/PhysRevB.81.045202 81, 045202 (2010)] to describe the temperature-dependent hopping charge carrier mobility at arbitrary electric fields in the large carrier density regime. Special emphasis was made to analyze the influence of the lateral electric field on the Meyer-Neldel (MN) phenomenon observed when studying the charge mobilities in thin-film organic field-effect transistors (OFET). Our calculations are based on the average hopping transition time approach, generalized for large carrier concentration limit finite fields, and taking into account also spatial energy correlations. The calculated electric field dependences of the hopping mobility at large carrier concentrations are in good agreement with previous computer simulations data. The shift of the MN temperature in an OFET upon applied electric field is shown to be a consequence of the spatial energy correlation in the organic semiconductor film. Our calculations show that the phenomenological Gill equation is clearly inappropriate for describing conventional charge carrier transport at low carrier concentrations. On the other hand a Gill-type behavior has been observed in a temperature range relevant for measurements of the charge carrier mobility in OFET structures. Since the present model is not limited to zero-field mobility, it allows a more accurate evaluation of important material parameters from experimental data measured at a given electric field. In particular, we showed that both the MN and Gill temperature can be used for estimating the width of the density of states distribution.

  17. Mucus permeating carriers: formulation and characterization of highly densely charged nanoparticles.

    PubMed

    Pereira de Sousa, Irene; Steiner, Corinna; Schmutzler, Matthias; Wilcox, Matthew D; Veldhuis, Gert J; Pearson, Jeffrey P; Huck, Christian W; Salvenmoser, Willi; Bernkop-Schnürch, Andreas

    2015-11-01

    The GI mucus layer represents a significant block to drug carriers absorption. Taking an example from nature, virus-mimicking nanoparticles (NPs) with highly densely charged surface were designed with the aim to improve their mucus permeation ability. NPs were formulated by combining chitosan with chondroitin sulfate and were characterized by particle size, ζ-potential and hydrophobicity. The interaction occurring between NPs and diluted porcine intestinal mucus was investigated by a new method. Furthermore, the rotating tube technique was exploited to evaluate the NPs permeation ability in fresh undiluted porcine intestinal mucus. NPs (400-500 nm) presenting a slightly positive (4.02 mV) and slightly negative (-3.55 mV) ζ-potential resulted to be hydrophobic and hydrophilic, respectively. On the one hand the hydrophobic NPs undergo physico-chemical changes when incubated with mucus, namely the size increased and the ζ-potential decreased. On the other hand, the hydrophilic NPs did not significantly change size and net charge during incubation with mucus. Both types of NPs showed a 3-fold higher diffusion ability compared to the reference 50/50 DL-lactide/glycolide copolymer NPs (136 nm, -23 mV, hydrophilic). Based on these results, this work gives valuable information for the further design of mucus-penetrating NPs. PMID:25576256

  18. Non-Abelian states in Fractional Quantum Hall effect in charge carrier hole systems

    NASA Astrophysics Data System (ADS)

    Simion, George; Lyanda-Geller, Yuli

    Quasiparticle excitations obeying non-Abelian statistics represent the key element of topological quantum computing. Crossing of levels and strong coupling between angular momentum and orbital motion, described by Luttinger Hamiltonian, make properties of charge carrier holes different from those of electrons. Peculiarities of hole spectrum in magnetic field provide an opportunity for controlling Landau level mixing in charge carier hole systems. In order to describe Fractional Quantum Hall effect for holes, we propose a method to map hole spectrum and wavefunctions using a spherical shell. We investigate the experimentally observed ν = 1 / 2 state in spherical geometry. Haldane pseudopotentials are computed and the effect of Landau level mixing is evaluated. Exact diagonalization of Coulomb interaction in systems with eight to fourteen holes is performed. We determine that the ground state superposition with Abelian 331 state is very small and the overlap with Moore-Read state is significant. The quasihole and quasielectron excitations are discussed. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  19. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering.

    PubMed

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M

    2016-04-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD's paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD's intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  20. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    NASA Astrophysics Data System (ADS)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  1. Charged carrier spin dynamics in ZnO quantum wells and epilayers

    NASA Astrophysics Data System (ADS)

    Kim, Jungtaek; Puls, J.; Sadofev, S.; Henneberger, F.

    2016-01-01

    Longitudinal charged carrier spin dynamics is studied for ZnO quantum wells and epilayers using the optical transition of the negatively charged exciton X- and the neutral donor bound exciton D0X , respectively. The hole spin relaxation is derived from the optical orientation of X- and D0X photoluminescence, whereas the spin relaxation of the resident electrons and donor electrons is accessed via the bleaching of the spin selective excitation process. Hole spin relaxation times of τ1s ,h of 80 and 140 ps are found for D0X and X-, respectively, which are practically independent of a magnetic field B∥ applied along the ZnO c ⃗ axis. Much longer longitudinal electron spin relaxation times in the 1 μ s range are uncovered if the hyperfine interaction is suppressed by a proper B∥. A field strength of ≈2 mT is large enough proving the extremely small value of the Overhauser field in ZnO. This is related to the very restricted number of magnetic nuclei interacting with the electron inside the volume of the exciton complex.

  2. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    PubMed Central

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  3. Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation.

    PubMed

    Magri, Andrea; Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

    2015-01-01

    We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be -5.93 and -3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10(-6) and 2.1 × 10(-6) cm(2)·V(-1)·s(-1) was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10(-6) cm(2)·V(-1)·s(-1) and a hole mobility of 1.4 × 10(-4) cm(2)·V(-1)·s(-1). The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

  4. Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

    PubMed Central

    Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

    2015-01-01

    Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

  5. Electrostatic Injection of Very Large 2D Charge Carrier Densities to Obtain Metallic Conductivities in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Panzer, Matthew; Frisbie, C. Daniel

    2007-03-01

    The traditional choice of SiO2 for the gate dielectric material in organic field-effect transistors (OFETs) limits the amount of charge that one can induce via the field effect due to its relatively weak dielectric strength. In fact, the maximum 2D charge density achievable (near SiO2 breakdown, typically >100 V applied) is only ˜10^13 charges/cm^2, while the 2D molecular packing density of many common organic semiconductors is on the order of 5 x 10^14 molecules/cm^2. In order to achieve a higher fraction of charged semiconductor molecules in the 2D OFET channel, a dielectric layer with a higher capacitance is required. We have used a solid polymer electrolyte as an OFET dielectric in order to obtain 2D charge densities exceeding 10^14 charges/cm2 at operating voltages under 3 V in a variety of organic semiconductors. We have observed metallic conductivity values (˜1000 S/cm) and nearly temperature-independent resistance ratios in poly(3-hexylthiophene) films using a polymer electrolyte-gated OFET. In addition, conductivity maxima at carrier densities approaching 1 charge/molecule were observed in oligomeric, polymeric, and single-crystal organic semiconductors alike. This phenomenon may be caused by carrier correlations or a complete emptying of the semiconductor transport band at very high charge densities.

  6. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    PubMed

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable. PMID:26898270

  7. Charge Density and Molecular Weight of Polyphosphoramidate Gene Carrier Are Key Parameters Influencing Its DNA Compaction Ability and Transfection Efficiency

    PubMed Central

    Ren, Yong; Jiang, Xuan; Pan, Deng; Mao, Hai-Quan

    2011-01-01

    A series of polyphosphoramidates (PPA) with different molecular weights (MWs) and charge densities were synthesized and examined for their DNA compaction ability and transfection efficiency. A strong correlation was observed between the transfection efficiency of PPA/DNA nanoparticles and the MW and net positive charge density of the PPA gene carriers in three different cell lines (HeLa, HEK293 and HepG2 cells). An increase in MW and/or net positive charge density of PPA carrier yielded higher DNA compaction capacity, smaller nanoparticles with higher surface charges and higher complex stability against challenges by salt and polyanions. These favorable physicochemical properties of nanoparticles led to enhanced transfection efficiency. PPA/DNA nanoparticles with the highest complex stability showed comparable transfection efficiency as PEI/DNA nanoparticles likely by compensating the low buffering capacity with higher cellular uptake and affording higher level of protection to DNA in endolysosomal compartment. The differences in transfection efficiency were not attributed by any difference in cytotoxicity among the carriers, as all nanoparticles showed minimal level of cytotoxicity under the transfection conditions. Using PPA as a model system, we demonstrated the structural dependence of transfection efficiency of polymer gene carrier. These results offer more insights into nanoparticle engineering for non-viral gene delivery. PMID:21067136

  8. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  9. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  10. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  11. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false May carriers impose special charges on passengers with a disability for providing services and accommodations required by this rule? 382.31 Section 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS...

  12. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  13. Isoindigo-based polymer field-effect transistors: effects of selenophene-substitution on high charge carrier mobility.

    PubMed

    Park, Kwang Hun; Cheon, Kwang Hee; Lee, Yun-Ji; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2015-05-11

    We show that selenophene-substitution can be an efficient synthetic strategy toward high charge carrier mobility of isoindigo (IID)-based copolymers when their side chains are optimized. A high mobility of 5.8 cm(2) V(-1) s(-1) is demonstrated by a strategically designed IID-based polymer, with both side-chain adjustment and selenophene-substitution. PMID:25871952

  14. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  15. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations.

    PubMed

    Song, Linze; Shi, Qiang

    2015-05-01

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated. PMID:25956086

  16. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    SciTech Connect

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.

  17. Computational Confirmation of the Carrier for the "XCN" Interstellar Ice Bank: OCN(-) Charge Transfer Complexes

    NASA Technical Reports Server (NTRS)

    Park, J.-Y.; Woon, D. E.

    2004-01-01

    Recent experimental studies provide evidence that carrier for the so-called XCN feature at 2165 cm(exp -1) (4.62 micron) in young stellar objects is an OCN(-)/NH4(+) charge transfer (CT) complex that forms in energetically processed interstellar icy grain mantles. Although other RCN nitriles and RCN iosonitriles have been considered, Greenberg's conjecture that OCN(-) is associated with the XCN feature has persisted for over 15 years. In this work we report a computational investigation that thoroughly confirms the hypothesis that the XCN feature observed in laboratory studies can result from OCN(-)/NH4(+) CT complexes arising from HNCO and NH3, in a water ice environment. Density functional theory calculations with theory calculations with HNCO, NH3, and up to 12 waters reproduce seven spectroscopic measurements associated with XCN: the band origin of the asymmetric stretching mode of OCN(-), shifts due to isotopic substitutions of C, N, O, and H, and two weak features. However, very similar values are also found for the OCN(-)/NH4(+) CT complex arising from HOCN and NH3. In both cases, the complex forms by barrierless proton transfer from HNCO or HOCN to NH3 during the optimization of the solvated system. Scaled B3LYP/6-31+G** harmonic frequencies for HNCO and HOCN cases are 2181 and 2202 cm(exp -1), respectively.

  18. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE PAGESBeta

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore » extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  19. Charge-carrier transport and recombination in heteroepitaxial CdTe

    SciTech Connect

    Kuciauskas, Darius Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  20. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    NASA Astrophysics Data System (ADS)

    Harrison, S.; Young, M. P.; Hodgson, P. D.; Young, R. J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U. W.; Bimberg, D.

    2016-02-01

    Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k .p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

  1. Ruthenium cation substitutional doping for efficient charge carrier transfer in organic/inorganic hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Kong, Degui; Jin, Xiao; Sun, Weifu; Du, Jiaxing; Tong, Jifeng; Chen, Changyong; Yang, Xuwei; Cheng, Yuanyuan; Li, Qinghua

    2015-01-01

    Solution-processed organic/inorganic hybrid solar cells have emerged as a new platform for low-cost optoelectronics. At the heart of photovoltaic devices lies the matching of a junction, which requires the suitable energy level alignment of n-type and p-type semiconductors. Incorporating foreign ions into bulk semiconductors has been largely employed for many decades, yet electronically active doping in energy level control of the hybrid bulk heterojunctions has been rarely involved and the demonstration of robust functional optoelectronic devices had thus far been elusive. Herein, we introduce Ru ions into TiO2 to decorate the energy level of the acceptor to gain better energy level alignment between the donor and acceptor. By reducing the 'excess' energy offset between the n-type and p-type semiconductors, the electron transfer becomes faster, thus leading to a notable enhancement in power conversion efficiency, i.e., from 2.20% to 2.89%. The results demonstrate that the energy level can be controlled effectively by the versatile Ru dopants. This work opens an effective route for accelerating the charge carrier transfer at the interface and achieving high-performance organic/inorganic hybrid optoelectronic devices.

  2. Modulation of phase behaviors and charge carrier mobilities by linkage length in discotic liquid crystal dimers.

    PubMed

    Wang, Yi-Fei; Zhang, Chun-Xiu; Wu, Hao; Zhang, Ao; Wang, Jian-Chuang; Zhang, Shuai-Feng; Pu, Jia-Ling

    2015-01-28

    A clear structure-property relationship was revealed in a series of triphenylene-based dimers, which contained two triphenylene nuclei each bearing five β-OC4H9 substituents and are linked through a flexible O(CH2)nO polymethylene chain (n=6-12). Dimers with the linkage close to twice the length of the free side chains (n=8, 9) exhibited a single Colhp phase, while others with the linkage shorter (n=6, 7) or longer (n=10, 11, 12) showed multiphase behaviors with a transition from the Colhp phase to Colh phase; hole mobilities of Colhp phases reached 1.4×10(-2) cm2 V(-1) s(-1) in the dimer for which the linkage is exactly twice the length of the free side chains (n=8), and decreased regularly both with linkage length becoming shorter or longer. This modulation of phase behaviors and charge carrier mobilities was demonstrated to be generated by various steric perturbations introduced by linkages with different lengths, which result in different degrees of lateral fluctuations of discotic moieties in the columns. PMID:25467212

  3. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    SciTech Connect

    Barone, C. Mauro, C.; Pagano, S.; Landi, G.; Neitzert, H. C.

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  4. Specific features of intervalley scattering of charge carriers in n-Si at high temperatures

    SciTech Connect

    Fedosov, A. V.; Luniov, S. V.; Fedosov, S. A.

    2010-10-15

    In n-Si, intervalley scattering of electrons can be of two types, f scattering and g scattering. With the purpose of establishing the contributions of f- and g-type transitions to intervalley scattering, the piezoresistance of n-Si crystals is studied in the temperature range T = 295-363 K. The initial concentration of charge carriers in the n-Si samples is 1.1 x 10{sup 14} cm{sup -3}, and the resistivity at 300 K is {rho} = 30 {Omega} cm. As the temperature is increased, the region of leveling-off of the piezoresistance shifts to lower voltages. The characteristic feature of the dependence {rho} = {rho}(T) plotted in the double logarithmic coordinates (log{rho} = f(logT)) is the transition from the slope 1.68 to the slope 1.83 at T > 330 K. This is attributed to the substantial contribution of g transitions to intervalley scattering in the high-temperature region. For verification of the interpretation of the dependence {rho} = {rho}(T), the dependence is calculated on the basis of the theory of anisotropic scattering with consideration for intervalley transitions.

  5. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    NASA Astrophysics Data System (ADS)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  6. The Moving Lines on Electron Spectra as Charge Reflexes on Non-equilibrium States of Nanostructured Surfaces.

    PubMed

    Mishchuk, Oleg A

    2016-12-01

    The experimental results present the phenomenon of moving lines on electron spectra which are linked spatially and in time with the localization and durability of the processes of new surface producing in folds and grain boundaries. This effect was also realized for a thin-layer composite "organic on metal films on dielectric substrate" in modeling non-equilibrium conditions which are created by the intensive electron beam pulse impact. It was found that the nature of the inceptive adsorption layer, in addition to the metal film, determines the initial positions of moving lines on the spectra. The main accents in these investigations were in observations of appearance of the moving lines, dynamics of their displacements on the spectra, final stages when these lines vanished, and finding the general regularities between the spontaneous and induced events. PMID:27083583

  7. The Moving Lines on Electron Spectra as Charge Reflexes on Non-equilibrium States of Nanostructured Surfaces

    NASA Astrophysics Data System (ADS)

    Mishchuk, Oleg A.

    2016-04-01

    The experimental results present the phenomenon of moving lines on electron spectra which are linked spatially and in time with the localization and durability of the processes of new surface producing in folds and grain boundaries. This effect was also realized for a thin-layer composite "organic on metal films on dielectric substrate" in modeling non-equilibrium conditions which are created by the intensive electron beam pulse impact. It was found that the nature of the inceptive adsorption layer, in addition to the metal film, determines the initial positions of moving lines on the spectra. The main accents in these investigations were in observations of appearance of the moving lines, dynamics of their displacements on the spectra, final stages when these lines vanished, and finding the general regularities between the spontaneous and induced events.

  8. Space charge memory effect in a-Si:H at low temperatures

    SciTech Connect

    Heck, S.; Stradins, P.; Fritzsche, H.

    1997-07-01

    Space charges build up near one or both electrodes of a photoconductor unless the thermoionic current balances the photocurrent. Space charges built up also when a voltage U is applied at low T to a semiconductor containing a nonequilibrium distribution of carriers. The presence of a space charge is observed as a relaxation-current transient when the sample is illuminated at zero bias. If one type of carrier is immobile the steady state photocurrent becomes zero.

  9. Effects of charge carrier concentration in hybrid conjugated polymer/oxide photovoltaic devices

    NASA Astrophysics Data System (ADS)

    White, Matthew Schuette

    2009-12-01

    of the polymer is a requisite for functional devices, but intentional doping of the oxide provides an additional degree of control over interfacial electric fields. By using planar hybrid heterojunctions, the utility of this effect is shown by increasing the driving force for charge separation. Interfacial barrier layers are required on highly doped ZnO to prevent recombination and preserve high fill factors. The measurable carrier concentration in the depletion region of polymer and polymer-fullerene blend films is shown to be significantly larger under illumination than in the dark. This effect is not related to breaking of the conjugated bonds in the polymer, as is the device aging phenomenon, but stems from low mobility of photo-generated electrons. The depletion width and maximum electric field in devices are influenced by the presence of an increased effective doping density under illumination.

  10. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  11. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    NASA Astrophysics Data System (ADS)

    Winnerl, Andrea; Pereira, Rui N.; Stutzmann, Martin

    2015-10-01

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  12. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    SciTech Connect

    Winnerl, Andrea Pereira, Rui N.; Stutzmann, Martin

    2015-10-21

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  13. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive.

    PubMed

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-05-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene-conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions. PMID:27386541

  14. Photogeneration and transport of charge carriers in hybrid materials of conjugated polymers and dye-sensitized TiO2

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Glowacki, I.; Scherf, U.; Ulanski, J.; Hörhold, H.-H.; Neher, D.

    1999-12-01

    Steady state photoconductivity and current-voltage (I-V) experiments are performed on solid films of organic/inorganic composites of dye-sensitized TiO2 in combination with poly(N-vinylcarbazole) (PVK), a ladder-type PPP and a soluble PPV derivative. The I-V characteristics of the composites in the dark are explained by the formation of percolation networks of nanoparticles between the electrodes. Photoaction spectra of the devices prove that the photogeneration of charge carriers is significantly enhanced and spectrally broadened only if electron transfer from the polymer to the dye is possible. Increasing the concentration of the nanoparticles in the hybrid materials changes the spectral shape of the photoresponse. For high TiO2 contents signatures due to the absorption of the Ruthenium dye can be observed. The different electronic properties of anatase/brookite TiO2 and rutile TiO2 have only minor effects on the generation of charge carriers and on the shape of the photoaction spectra. Indeed, photocurrents are more related to the Brunauer—Emmett-Teller surface area of the nanoparticles and thus, to the amount of dye adsorbed. Charge collection efficiencies exceeding 100%, observed for both bias directions, can be explained by photoconductivity gain. It is proposed that recombination is reduced by transport of the oppositely charged carriers in two different phases.

  15. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

    PubMed Central

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-01-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene–conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions. PMID:27386541

  16. Carrier separation and charge transport characteristics of reduced graphene oxide supported visible-light active photocatalysts.

    PubMed

    Vinoth, Ramalingam; Karthik, Peramaiah; Muthamizhchelvan, Chellamuthu; Neppolian, Bernaurdshaw; Ashokkumar, Muthupandian

    2016-02-21

    Extending the absorption to the visible region by tuning the optical band-gap of semiconductors and preventing charge carrier recombination are important parameters to achieve a higher efficiency in the field of photocatalysis. The inclusion of reduced graphene oxide (rGO) support in photocatalysts is one of the key strategies to address the above-mentioned issues. In this study, rGO supported AgI-mesoTiO2 photocatalysts were synthesized using a sonochemical approach. The physical effects of ultrasound not only improved the crystallinity of AgI-mesoTiO2 but also increased the surface area and loading of the AgI-mesoTiO2 nanocomposite on rGO sheets. The low intense oxygen functionalities (C-O-C and COOH groups) peak observed in the high resolution C1s spectrum of a hybrid AgI-mesoTiO2-rGO photocatalyst clearly confirmed the successful reduction of graphene oxide (GO) to rGO. The interfacial charge transfer between the rGO and the p-n junction of heterostructured photocatalysts has decreased the band-gap of the photocatalyst from 2.80 to 2.65 eV. Importantly, the integration of rGO into AgI-mesoTiO2 composites serves as a carrier separation centre and provides further insight into the electron transfer pathways of heterostructured nanocomposites. The individual effects of photo-generated electrons and holes over rGO on the photocatalytic degradation efficiency of rhodamine (RhB) and methyl orange (MO) using AgI-mesoTiO2-rGO photocatalysts were also studied. Our experimental results revealed that photo-generated superoxide (O2(-)˙) radicals are the main reactive species for the degradation of MO, whereas photo-generated holes (h(+)) are responsible for the degradation of RhB. As a result, 60% enhancement in MO degradation was observed in the presence of rGO in comparison to that of the pure AgI-mesoTiO2 photocatalyst. This is due to the good electron acceptor and the ultrafast electron transfer properties of rGO that can effectively reduce the molecular oxygen to

  17. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    NASA Astrophysics Data System (ADS)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  18. Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Korlacki, R.; Knight, S.; Hofmann, T.; Schöche, S.; Darakchieva, V.; Janzén, E.; Monemar, B.; Gogova, D.; Thieu, Q.-T.; Togashi, R.; Murakami, H.; Kumagai, Y.; Goto, K.; Kuramata, A.; Yamakoshi, S.; Higashiwaki, M.

    2016-03-01

    We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β -Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2 ¯01 ), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β -Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with Au and Bu symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in β -Ga2O3 . We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in β -Ga2O3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for β -Ga2O3 .

  19. Time-of-flight mobility of charge carriers in position-dependent electric field between coplanar electrodes

    NASA Astrophysics Data System (ADS)

    Pavlica, Egon; Bratina, Gvido

    2012-08-01

    Time-of-flight measurements of the photocurrent in thin organic semiconductor layers represent an effective way to extract charge carrier mobility. A common method to interpret the time-dependence of the photocurrent in these material systems assumes a position-independent electric field between two coplanar electrodes. In this letter, we compare time-dependence of the photocurrent, measured in the samples comprising thin layers of poly-3-hexylthiophene, with the Monte Carlo simulations. In the simulations, we have used both, a position-independent and a position-dependent electric field. We obtained a favorable agreement between the simulations and the measurements only in the case of position-dependent electric field. We demonstrate that the charge carrier mobility may be underestimated by more than one order of magnitude, if a position-independent electric field is used in the calculations of the mobility.

  20. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

    SciTech Connect

    Abdinov, A. Sh.; Babayeva, R. F.; Amirova, S. I.; Rzayev, R. M.

    2013-08-15

    In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

  1. Comparison of majority carrier charge transfer velocities at Si/polymer and Si/metal photovoltaic heterojunctions

    SciTech Connect

    Price, Michelle J.; Foley, Justin M.; May, Robert A.; Maldonado, Stephen

    2010-08-23

    Two sets of silicon (Si) heterojunctions with either Au or PEDOT:PSS contacts have been prepared to compare interfacial majority carrier charge transfer processes at Si/metal and Si/polymer heterojunctions. Current-voltage (J-V) responses at a range of temperatures, wavelength-dependent internal quantum yields, and steady-state J-V responses under illumination for these devices are reported. The cumulative data suggest that the velocity of majority carrier charge transfer, v{sub n}, is several orders of magnitude smaller at n-Si/PEDOT:PSS contacts than at n-Si/Au junctions, resulting in superior photoresponse characteristics for these inorganic/organic heterojunctions.

  2. Thickness-Dependent Charge Carrier Dynamics in CdSe/ZnSe/CdS Core/Barrier/Shell Nanoheterostructures.

    PubMed

    Yadav, Sushma; Chowdhury, Apurba; Sapra, Sameer

    2016-03-01

    We report the synthesis of CdSe/ZnSe/CdS heterostructures composed of type I and type II band alignments, where ZnSe acts as a barrier for charge carriers between the CdSe core and the CdS shell as well as being an active component of the type I (CdSe/ZnSe) and type II (ZnSe/CdS) structure simultaneously. We investigated the effect of the thickness of the barrier and the shell on the charge carrier dynamics by using UV/Vis absorbance, photoluminescence (PL), and time-resolved fluorescence techniques. The experimental data are supported by simple theoretical calculations based on effective mass approximation (EMA). PL results indicate the emission from both type I and type II structures. Time-resolved fluorescence studies show that the lifetime of the core emission decreases with increasing barrier width, owing to a greater confinement of the exciton to the core, whereas it increases with shell width because of the tunneling of charge carriers, primarily electrons, delaying the recombination of the exciton. The lifetime of the shell emission decreases with shell width as well as barrier width and height, with a larger effect being observed for the barrier width and negligible for the associated changes in the barrier height. PMID:26511899

  3. Photogeneration of charge carrier correlated with amplified spontaneous emission in single crystals of a thiophene/phenylene co-oligomer.

    PubMed

    Saeki, Akinori; Seki, Shu; Shimizu, Yasuhiro; Yamao, Takeshi; Hotta, Shu

    2010-04-01

    Thiophene/phenylene co-oligomers have substantial promise for the use of not only organic electronics but also organic optical devices. However, considerably less is known about the correlation between their optical and optoelectronic properties. We have investigated the charge carrier generation in 1,4-bis(5-phenylthiophen-2-yl)benzene (AC5) single crystals by flash-photolysis time-resolved microwave conductivity (TRMC) and transient absorption spectroscopy (TAS). It was found that the dependence of photocarrier generation efficiency on excitation photon density differed from that of emission efficiency once amplified spontaneous emission (ASE) and resultant spectrally narrowed emission occur upon exposure to 355 nm. In contrast, the dependences of emission and photocarrier generation efficiencies were identical when ASE was not involved at a different excitation wavelength (193 nm). An approximated analytical solution of rate equation considering ASE or singlet-singlet annihilation was applied to the experiments, exhibiting good agreement. On the basis of TRMC, TAS, and extinction coefficient of radical cation assessed by pulse radiolysis, the minimum charge carrier mobility was estimated, without electrodes, to be 0.12 cm(2) V(-1) s(-1). The dynamics of charge carrier and triplet excited state is discussed, accompanying with examination by time-dependent density functional theory. The present work would open the way to a deeper understanding of the fate of excited state in optically robust organic semiconducting crystals. PMID:20387943

  4. Insights from transport modeling of unusual charge carrier behavior of PDTSiTzTz:PC71BM bulk heterojunction materials

    NASA Astrophysics Data System (ADS)

    Slobodyan, Oleksiy; Moench, Sarah; Liang, Kelly; Danielson, Eric; Holliday, Bradley; Dodabalapur, Ananth

    2015-03-01

    Development of hole-transporting copolymers for use in bulk heterojunctions (BHJs) has significantly improved organic solar cell performance. Despite advances on the materials side, the physics of charge carrier transport remains unsettled. Intrigued by its ability to maintain high fill factors in thick active layers, we studied the copolymer poly[2-(5-(4,4-dioctyl-4H-silolo[3,2-b:4,5-b’]dithiophen-2-yl)-3-tetradecylthiophen-2-yl)- 5-(3-tetradecylthiophen-2-yl)thiazolo[5,4-d]thiazole] (PDTSiTzTz) blended with PC71BM. Results show mobilities which are carrier-concentration-dependent and characterized by a negative Poole-Frenkel effect. Such behavior is not described by current carrier transport models. Established transport mechanisms like multiple-trap-and-release or variable range hopping yield dependence of mobility on carrier concentration. However, a more basic model like Gaussian distribution model (GDM) is needed to produce the negative Poole-Frenkel effect, though GDM cannot describe carrier-concentration-dependent mobility. We have combined key aspects of existing models to create a unified transport model capable of describing phenomena observed in PDTSiTzTz:PC71BM. This model can be used to address open questions about transport physics of organic BHJ materials. U.S. Department of Energy, Award Number DE-SC0001091.

  5. 47 CFR 51.909 - Transition of rate-of-return carrier access charges.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ...-Return Carrier may elect to implement a single per minute rate element for both interstate and intrastate... implement a single per minute rate element for both interstate and intrastate terminating End Office Access.... In the alternative, any Rate-of-Return Carrier may elect to implement a single per minute...

  6. 47 CFR 51.909 - Transition of rate-of-return carrier access charges.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Access Rate. In the alternative, any Rate-of-Return Carrier may elect to implement a single per minute... elect to implement a single per minute rate element for terminating End Office Access Service no greater.... In the alternative, any Rate-of-Return Carrier may elect to implement a single per minute...

  7. Numerical Analysis on Non-Equilibrium Mechanism of Laser-Supported Detonation Wave Using Multiply-Charged Ionization

    SciTech Connect

    Shiraishi, Hiroyuki

    2006-05-02

    Laser-Supported Detonation (LSD), one type of Laser-Supported Plasma (LSP), is considered as the most important phenomena because it can generate high pressure and high temperature for laser absorption. In this study, I have numerically simulated the 1-D LSD waves propagating through a helium gas, in which Multiply-charged ionization model is considered for describing an accurate ionization process.

  8. Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

    PubMed

    Choi, Pyungho; Kim, Hyunjin; Kim, Sangsub; Kim, Soonkon; Javadi, Reza; Park, Hyoungsun; Choi, Byoungdeog

    2016-05-01

    In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel. Thus, hot carrier stress causes interface trap generation in whole channel area while most border trap generation occurs in the drain region under the gate. Ultimately, modified charge pumping method was performed to get trap density distribution of hot carrier stressed MOSFET devices, and the trapping-detrapping mechanism is also analyzed. PMID:27483833

  9. Demonstration of the difference in the Casimir force for samples with different charge-carrier densities.

    PubMed

    Chen, F; Klimchitskaya, G L; Mostepanenko, V M; Mohideen, U

    2006-10-27

    A measurement of the Casimir force between a gold coated sphere and two Si plates of different carrier densities is performed using a high vacuum based atomic force microscope. The results are compared with the Lifshitz theory and good agreement is found. Our experiment demonstrates that by changing the carrier density of the semiconductor plate by several orders of magnitude it is possible to modify the Casimir interaction. This result may find applications in nanotechnology. PMID:17155446

  10. Localized Charge Carrier Transport Properties of Zn1- x Ni x O/NiO Two-Phase Composites

    NASA Astrophysics Data System (ADS)

    Joshi, D. C.; Dasari, K.; Nayak, S.; Palai, R.; Suresh, P.; Thota, S.

    2016-04-01

    We report the localized charge carrier transport of two-phase composite Zn1- x Ni x O/NiO (0 ≤ x ≤ 1) using the temperature dependence of ac-resistivity ρ ac(T) across the Néel temperature T N (= 523 K) of nickel oxide. Our results provide strong evidence to the variable range hopping of charge carriers between the localized states through a mechanism involving spin-dependent activation energies. The temperature variation of carrier hopping energy ɛ h(T) and nearest-neighbor exchange-coupling parameter J ij(T) evaluated from the small poleron model exhibits a well-defined anomaly across T N. For all the composite systems, the average exchange-coupling parameter (J ij)AVG nearly equals to 70 meV which is slightly greater than the 60-meV exciton binding energy of pure zinc oxide. The magnitudes of ɛ h (˜0.17 eV) and J ij (˜11 meV) of pure NiO synthesized under oxygen-rich conditions are consistent with the previously reported theoretical estimation based on Green's function analysis. A systematic correlation between the oxygen stoichiometry and, ɛ h(T) and J ij(T) is discussed.

  11. Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Everaert, J. L.; Rosseel, E.; Dekoster, J.; Pap, A.; Meszaros, A.; Kis-Szabo, K.; Pavelka, T.

    2010-03-01

    A method is described to determine the mobility of inversion charge carriers on Si substrates with SiO2 and HfO2 gate dielectrics. It is a completely contactless method combining corona charge and charge spreading metrology. [Patent Application Nos. EP 07118673 and U.S. 60940594.] It is shown that from such measurements mobility of inversion charge carriers can be calculated as a function of the effective electric field. The resulting mobility curves are comparable to those found in transistors.

  12. Investigation of free charge carrier dynamics in single-crystalline CVD diamond by two-photon absorption

    SciTech Connect

    Ivakin, E V; Kisialiou, I G; Ralchenko, V G; Bolshakov, A P; Ashkinazi, E E; Sharonov, G V

    2014-11-30

    By using the methods of transient gratings (TGs) and induced absorption, we have studied the kinetics of plasma of free charge carriers (FCCs) created by the action of a picosecond laser pulse in two high-purity diamond single crystals synthesised from the gas phase. The gratings with different spatial periods have been excited at the wavelengths of 266 or 213 nm (above and below the fundamental absorption edge in diamond) and probed with continuous-wave radiation in the visible region. At the moderate FCC concentrations (∼7 × 10{sup 17} cm{sup -3}), the coefficient of ambipolar diffusion and the carrier recombination time of two crystals are 20.3 and 18.9 cm{sup 2} s{sup -1} and 30 and 190 ns, respectively. The increase in the carrier concentration up to 5 × 10{sup 19} cm{sup -3} reduces the TG lifetime. We have determined the conditions under which the relaxation of the grating of carriers leads to the formation of a thermal grating, with the amplitude sufficient for its experimental observation. (interaction of laser radiation with matter. laser plasma)

  13. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

    SciTech Connect

    Elmasry, F.; Okubo, S.; Ohta, H.; Fujiwara, Y.

    2014-05-21

    Er-concentration effect in GaAs;Er,O containing charge carriers (n-type, high resistance, p-type) has been studied by X-band Electron spin resonance (ESR) at low temperature (4.7 K < T < 18 K). Observed A, B, and C types of ESR signals were identical to those observed previously in GaAs:Er,O without carrier. The local structure around Er-2O centers is not affected by carriers because similar angular dependence of g-values was observed in both cases (with/without carrier). For temperature dependence, linewidth and lineshape analysis suggested the existence of Er dimers with antiferromagnetic exchange interaction of about 7 K. Moreover, drastic decrease of ESR intensity for C signal in p-type sample was observed and it correlates with the decrease of photoluminescence (PL) intensity. Possible model for the Er-2O trap level in GaAs:Er,O is discussed from the ESR and PL experimental results.

  14. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    SciTech Connect

    Lim, Eunju E-mail: taguchi.d.aa@m.titech.ac.jp; Taguchi, Dai E-mail: taguchi.d.aa@m.titech.ac.jp Iwamoto, Mitsumasa E-mail: taguchi.d.aa@m.titech.ac.jp

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  15. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    NASA Astrophysics Data System (ADS)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  16. Effect of Mg doping on the structural and free-charge carrier properties of InN films

    SciTech Connect

    Xie, M.-Y.; Ben Sedrine, N.; Hung, L.; Monemar, B.; Darakchieva, V.; Schöche, S.; Hofmann, T.; Schubert, M.; Wang, X.; Yoshikawa, A.; Wang, K.; Araki, T.; Nanishi, Y.

    2014-04-28

    We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 10{sup 18} cm{sup −3} to 3.9 × 10{sup 21} cm{sup −3}. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 10{sup 18} cm{sup −3} ≲ [Mg] ≲ 9.0 × 10{sup 19} cm{sup −3}. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

  17. Charge carrier motion in disordered conjugated polymers: a multiscale ab-initio study

    SciTech Connect

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    We developed an ab-initio multiscale method for simulation of carrier transport in large disordered systems, based on direct calculation of electronic states and electron-phonon coupling constants. It enabled us to obtain the never seen before rich microscopic details of carrier motion in conjugated polymers, which led us to question several assumptions of phenomenological models, widely used in such systems. The macroscopic mobility of disordered poly(3- hexylthiophene) (P3HT) polymer, extracted from our simulation, is in agreement with experimental results from the literature.

  18. Combined impact of entropy and carrier delocalization on charge transfer exciton dissociation at the donor-acceptor interface

    NASA Astrophysics Data System (ADS)

    Ono, Shota; Ohno, Kaoru

    2016-08-01

    Several models of the charge transfer exciton (CTE) have been proposed to explain its dissociation at the donor-acceptor (DA) interface. However, the underlying physics is still under debate. Here, we derive a temperature (T ) dependent tight-binding model for an electron-hole pair at the DA interface. The main finding is the existence of the localization-delocalization transition at a critical T , which can explain the CTE dissociation. The present study highlights the combined effect of entropy (finite T ) and carrier delocalization in the CTE dissociation.

  19. Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

    SciTech Connect

    Germanenko, A. V.; Minkov, G. M.; Rut, O. E.; Sherstobitov, A. A.; Dvoretsky, S. A.; Mikhailov, N. N.

    2013-12-15

    The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model.

  20. A Review and Advance Technology in Multi-Area Automatic Generation Control by Using Minority Charge Carrier Inspired Algorithm

    NASA Astrophysics Data System (ADS)

    Madichetty, Sreedhar; Panda, Susmita; Mishra, Sambeet; Dasgupta, Abhijit

    2013-11-01

    This article deals with automatic generation control of a multi-area interconnected thermal system in different modes using intelligent integral and proportional-integral controllers. Appropriate generation rate constraint has been considered for the thermal generation plants. The two cumulated thermal areas are considered with reheat turbines. Performances of reheat turbine on dynamic responses have been investigated. Further, selection of suitable integral and proportional-integral controllers has been investigated with a minority charge carrier inspired algorithm. Cumulative system performance is examined considering with different load perturbation in both cumulative thermal areas. Further, system is investigated with different area control errors, and results are explored.

  1. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    PubMed

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials. PMID:26972104

  2. Determination of Effective Stability Constants of Ion-Carrier Complexes in Ion Selective Nanospheres with Charged Solvatochromic Dyes.

    PubMed

    Xie, Xiaojiang; Bakker, Eric

    2015-11-17

    Ionophores are widely used ion carriers in ion selective sensors. The effective stability constant (β) is a key physical parameter providing valuable guidelines to the design of ionophores and carrier-based ion selective sensors. The β value of ion-carrier complex in plasticized poly(vinyl chloride) (PVC) membranes and solutions have been determined in the past by various techniques, but most of them are difficult to implement at the nanoscale owing to the ultrasmall sample volume. A new methodology based on charged solvatochromic dyes is introduced here for the first time to determine β values directly within ion selective nanospheres. Four ionophores with different selectivities toward Na(+), K(+), Ca(2+), and H(+), respectively, are successfully characterized in nanospheres composed of triblock copolymer Pluronic F-127 and bis(2-ethylhexyl) sebacate. The values determined in the nanospheres are smaller compared with those in plasticized PVC membranes, indicating a more polar nanosphere microenvironment and possible uneven distribution of the sensing components in the interfacial region. PMID:26502342

  3. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    NASA Astrophysics Data System (ADS)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  4. The Effect of Diiodooctane on the Charge Carrier Generation in Organic Solar Cells Based on the Copolymer PBDTTT-C

    PubMed Central

    Zusan, Andreas; Gieseking, Björn; Zerson, Mario; Dyakonov, Vladimir; Magerle, Robert; Deibel, Carsten

    2015-01-01

    Microstructural changes and the understanding of their effect on photocurrent generation are key aspects for improving the efficiency of organic photovoltaic devices. We analyze the impact of a systematically increased amount of the solvent additive diiodooctane (DIO) on the morphology of PBDTTT-C:PC71BM blends and related changes in free carrier formation and recombination by combining surface imaging, photophysical and charge extraction techniques. We identify agglomerates visible in AFM images of the 0% DIO blend as PC71BM domains embedded in an intermixed matrix phase. With the addition of DIO, a decrease in the size of fullerene domains along with a demixing of the matrix phase appears for 0.6% and 1% DIO. Surprisingly, transient absorption spectroscopy reveals an efficient photogeneration already for the smallest amount of DIO, although the largest efficiency is found for 3% DIO. It is ascribed to a fine-tuning of the blend morphology in terms of the formation of interpenetrating donor and acceptor phases minimizing geminate and nongeminate recombination as indicated by charge extraction experiments. An increase in the DIO content to 10% adversely affects the photovoltaic performance, most probably due to an inefficient free carrier formation and trapping in a less interconnected donor-acceptor network. PMID:25655785

  5. Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    NASA Astrophysics Data System (ADS)

    Girish Kumar, S.; Koteswara Rao, K. S. R.

    2015-11-01

    Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO2 based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO3 (2.4-2.8 eV) and Bi2WO6 (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO3 CB and Bi2WO6 VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu2+ ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  6. Charge Carrier Transport Through the Interface Between Hybrid Electrodes and Organic Materials in Flexible Organic Light Emitting Diodes.

    PubMed

    Zhou, Huanyu; Cheong, Hahn-Gil; Park, Jin-Woo

    2016-05-01

    We investigated the electronic properties of composite-type hybrid transparent conductive electrodes (h-TCEs) based on Ag nanowire networks (AgNWs) and indium tin oxide (ITO). These h-TCEs were developed to replace ITO, and their mechanical flexibility is superior to that of ITO. However, the characteristics of charge carriers and the mechanism of charge-carrier transport through the interface between the h-TCE and an organic material are not well understood when the h-TCE is used as the anode in a flexible organic light-emitting diode (f-OLED). AgNWs were spin coated onto polymer substrates, and ITO was sputtered atop the AgNWs. The electronic energy structures of h-TCEs were investigated by ultraviolet photoelectron spectroscopy. f-OLEDs were fabricated on both h-TCEs and ITO for comparison. The chemical bond formation at the interface between the h-TCE and the organic layer in f-OLEDs was investigated by X-ray photoelectron spectroscopy. The performances of f-OLEDs were compared based on the analysis results. PMID:27483896

  7. Impact of charge carrier injection on single-chain photophysics of conjugated polymers

    NASA Astrophysics Data System (ADS)

    Hofmann, Felix J.; Vogelsang, Jan; Lupton, John M.

    2016-06-01

    Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distribution of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.

  8. Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

    NASA Astrophysics Data System (ADS)

    Dahal, Rajendra; Ahmed, Kawser; Woei Wu, Jia; Weltz, Adam; Jian-Qiang Lu, James; Danon, Yaron; Bhat, Ishwara B.

    2016-06-01

    The in-plane and out-of-plane mobility–lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current–voltage characteristics of metal–hBN–metal structures measured under external excitations. The in-plane mobility–lifetime products for electrons and holes are ∼2.8 × 10‑5 and ∼4.85 × 10‑6 cm2/V, measured from lateral carrier collection, whereas the out-of-plane mobility–lifetime products for electrons and holes are ∼5.8 × 10‑8 and ∼6.1 × 10‑9 cm2/V, measured from vertical carrier collection, respectively. The mobility–lifetime product is a few orders of magnitude higher along the plane than along the out of plane in hBN films.

  9. Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1-x/InP quantum well detectors

    NASA Astrophysics Data System (ADS)

    Vashisht, Geetanjali; Dixit, V. K.; Porwal, S.; Kumar, R.; Sharma, T. K.; Oak, S. M.

    2016-03-01

    The effect of charge carrier localization resulting in "S-shaped" temperature dependence of the photoluminescence peak energy of InAsxP1-x/InP quantum wells (QWs) is distinctly revealed by the temperature dependent surface photo voltage (SPV) and photoconductivity (PC) processes. It is observed that the escape efficiency of carriers from QWs depends on the localization energy, where the carriers are unable to contribute in SPV/PC signal below a critical temperature. Below the critical temperature, carriers are strongly trapped in the localized states and are therefore unable to escape from the QW. Further, the critical temperature increases with the magnitude of localization energy of carriers. Carrier localization thus plays a pivotal role in defining the operating temperature range of InAsxP1-x/InP QW detectors.

  10. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  11. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  12. Ionic liquid based lithium battery electrolytes: charge carriers and interactions derived by density functional theory calculations.

    PubMed

    Angenendt, Knut; Johansson, Patrik

    2011-06-23

    The solvation of lithium salts in ionic liquids (ILs) leads to the creation of a lithium ion carrying species quite different from those found in traditional nonaqueous lithium battery electrolytes. The most striking differences are that these species are composed only of ions and in general negatively charged. In many IL-based electrolytes, the dominant species are triplets, and the charge, stability, and size of the triplets have a large impact on the total ion conductivity, the lithium ion mobility, and also the lithium ion delivery at the electrode. As an inherent advantage, the triplets can be altered by selecting lithium salts and ionic liquids with different anions. Thus, within certain limits, the lithium ion carrying species can even be tailored toward distinct important properties for battery application. Here, we show by DFT calculations that the resulting charge carrying species from combinations of ionic liquids and lithium salts and also some resulting electrolyte properties can be predicted. PMID:21591707

  13. Exciton and charge carrier dynamics in few-layer WS2

    NASA Astrophysics Data System (ADS)

    Vega-Mayoral, Victor; Vella, Daniele; Borzda, Tetiana; Prijatelj, Matej; Tempra, Iacopo; Pogna, Eva A. A.; Dal Conte, Stefano; Topolovsek, Peter; Vujicic, Natasa; Cerullo, Giulio; Mihailovic, Dragan; Gadermaier, Christoph

    2016-03-01

    Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better separation of the spectral features compared to MoS2 allows us to resolve a previously undetected process: these charges diffuse through the samples and get trapped at defects, such as flake edges or grain boundaries, causing an appreciable change of their transient absorption spectra. This finding opens the way to further studies of traps in TMD samples with different defect contents.Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better

  14. Preparation of ZnO nanoparticles for blend of P3HT:ZnO nanoparticles:PCBM thin film and its charge carrier dynamics characterization

    NASA Astrophysics Data System (ADS)

    Safriani, Lusi; Aprilia, Annisa; Bahtiar, Ayi; Risdiana, Kartawidjaja, Mariah; Apriani, Trisa; Kanazawa, Kei; Furukawa, Yukio

    2013-09-01

    Recently, many researchers have paid attention to develop active material of solar cell which plays an important role in absorbing solar spectrum. This active material should have an ability to transfer charge carrier resulted from the absorption of solar spectrum. The hybrid organic-inorganic solar cell has been developed due to the combining advantages between organic material Poly(3-hexylthiophene) (P3HT) and fullerene PCBM with inorganic material ZnO nanoparticles. The investigation of charge carrier dynamics in blend P3HT:ZnO nanoparticles:PCBM film as an active material of solar cell devices is an important things to enhance the solar cell performance. The charge carrier dynamics properties is needed to control the morphology of active material to produce an efficient and effective charge dissociation. In this study we synthezed the ZnO nanoparticles by using sol-gel methods. The size of nanoparticles resulted from the reflux process of zinc acetate in methanol by the presence of catalist sodium hydroxide is around 10 nm. Photo-induced Infra-red (PI-IR) Absorption Spectroscopy was used to investigate the charge carrier dynamics of P3HT:ZnO nanoparticles:PCBM thin film. Measurement of PI-IR Absorption Spectroscopy has been carried out under variation of temperature conditions from 78 to 300 K, using a 532-nm laser as a light source. At low temperature, the charge carrier recombination was performed by positive polarons along the intrachain of P3HT while at high temperature the charge carrier recombination was attributed to positive polarons along the interchain of P3HT.

  15. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    PubMed

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-01

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc. PMID:27371816

  16. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... user common line access charges are assessed for the origination or termination of intrastate services... regulation, pursuant to § 61.41 of this chapter, shall assign the balance of Account 6620-Services to the... assignment of the balance of Account 6620 to that classification during the twelve month period...

  17. Exciton and charge carrier dynamics in few-layer WS2.

    PubMed

    Vega-Mayoral, Victor; Vella, Daniele; Borzda, Tetiana; Prijatelj, Matej; Tempra, Iacopo; Pogna, Eva A A; Dal Conte, Stefano; Topolovsek, Peter; Vujicic, Natasa; Cerullo, Giulio; Mihailovic, Dragan; Gadermaier, Christoph

    2016-03-14

    Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with decreasing thickness (number of layers), as well as the strong resonance peaks in the absorption spectra suggest that excitons are the primary photoexcited states. Detailed time-domain studies of the photoexcitation dynamics in TMDs exist mostly for MoS2. Here, we use femtosecond optical spectroscopy to study the exciton and charge dynamics following impulsive photoexcitation in few-layer WS2. We confirm excitons as the primary photoexcitation species and find that they dissociate into charge pairs with a time constant of about 1.3 ps. The better separation of the spectral features compared to MoS2 allows us to resolve a previously undetected process: these charges diffuse through the samples and get trapped at defects, such as flake edges or grain boundaries, causing an appreciable change of their transient absorption spectra. This finding opens the way to further studies of traps in TMD samples with different defect contents. PMID:26890008

  18. Influence of doping on charge carrier collection in normal and inverted geometry polymer:fullerene solar cells

    NASA Astrophysics Data System (ADS)

    Dibb, George F. A.; Muth, Mathis-Andreas; Kirchartz, Thomas; Engmann, Sebastian; Hoppe, Harald; Gobsch, Gerhard; Thelakkat, Mukundan; Blouin, Nicolas; Tierney, Steve; Carrasco-Orozco, Miguel; Durrant, James R.; Nelson, Jenny

    2013-11-01

    While organic semiconductors used in polymer:fullerene photovoltaics are generally not intentionally doped, significant levels of unintentional doping have previously been reported in the literature. Here, we explain the differences in photocurrent collection between standard (transparent anode) and inverted (transparent cathode) low band-gap polymer:fullerene solar cells in terms of unintentional p-type doping. Using capacitance/voltage measurements, we find that the devices exhibit doping levels of order 1016 cm-3, resulting in space-charge regions ~100 nm thick at short circuit. As a result, low field regions form in devices thicker than 100 nm. Because more of the light is absorbed in the low field region in standard than in inverted architectures, the losses due to inefficient charge collection are greater in standard architectures. Using optical modelling, we show that the observed trends in photocurrent with device architecture and thickness can be explained if only charge carriers photogenerated in the depletion region contribute to the photocurrent.

  19. Theoretical investigation of fluorination effect on the charge carrier transport properties of fused anthra-tetrathiophene and its derivatives.

    PubMed

    Yin, Jun; Chaitanya, Kadali; Ju, Xue-Hai

    2016-03-01

    The crystal structures of known anthra-tetrathiophene (ATT) and its three fluorinated derivatives (ATT1, ATT2 and ATT3) were predicted by the Monte Carlo-simulated annealing method with the embedded electrostatic potential (ESP) charges. The most stable crystal structures were further optimized by the density functional theory with the dispersion energy (DFT-D) method. In addition, the effect of the electron-withdrawing fluorine atoms on the molecular geometry, molecular stacking, electronic and transport properties of title compounds were investigated by the density functional theory and the incoherent charge-hopping model. The calculated results show that the introduction of fluorine atoms does not affect the molecular planarity but decreases the HOMO-LUMO gap, which is beneficial to electron injection and provides more charge carrier stabilization. The improved electron mobility from ATT to ATT3 is attributed to the favorable molecular packing with strong π-π interaction and the short stacking distance. ATT2 and ATT3 exhibit remarkable angular dependence of mobilities and anisotropic behaviors. The band structures reveal that all the paths with larger transfer integrals are along the directions of large dispersions in the valence band (VB) and conduction band (CB). ATT3 has the largest electron mobility (0.48 cm(2)V(-1)s(-1)) among the four compounds, indicating that fluorination is an effective approach to improve electron transport. PMID:26774641

  20. Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

    SciTech Connect

    Bondarenko, Anton; Vyvenko, Oleg

    2014-02-21

    Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of traps refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.

  1. Theoretical predictions on the electronic structure and charge carrier mobility in 2D Phosphorus sheets

    PubMed Central

    Xiao, Jin; Long, Mengqiu; Zhang, Xiaojiao; Ouyang, Jun; Xu, Hui; Gao, Yongli

    2015-01-01

    We have investigated the electronic structure and carrier mobility of four types of phosphorous monolayer sheet (α-P, β-P,γ-P and δ-P) using density functional theory combined with Boltzmann transport method and relaxation time approximation. It is shown that α-P, β-P and γ-P are indirect gap semiconductors, while δ-P is a direct one. All four sheets have ultrahigh carrier mobility and show anisotropy in-plane. The highest mobility value is ~3 × 105 cm2V−1s−1, which is comparable to that of graphene. Because of the huge difference between the hole and electron mobilities, α-P, γ-P and δ-P sheets can be considered as n-type semiconductors, and β-P sheet can be considered as a p-type semiconductor. Our results suggest that phosphorous monolayer sheets can be considered as a new type of two dimensional materials for applications in optoelectronics and nanoelectronic devices. PMID:26035176

  2. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  3. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers.

    PubMed

    Sun, Baichuan; Barnard, Amanda S

    2016-08-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery. PMID:27404991

  4. Geant4 Simulations of SuperCDMS iZip Detector Charge Carrier Propagation

    NASA Astrophysics Data System (ADS)

    Agnese, Robert; Brandt, Daniel; Redl, Peter; Asai, Makoto; Faiez, Dana; Kelsey, Mike; Bagli, Enrico; Anderson, Adam; Schlupf, Chandler

    2014-03-01

    The SuperCDMS experiment uses germanium crystal detectors instrumented with ionization and phonon readout circuits to search for dark matter. In order to simulate the response of the detectors to particle interactions the SuperCDMS Detector Monte Carlo (DMC) group has been implementing the processes governing electrons and phonons at low temperatures in Geant4. The charge portion of the DMC simulates oblique propagation of the electrons through the L-valleys, propagation of holes through the Γ-valleys, inter-valley scattering, and emission of Neganov-Luke phonons in a complex applied electric field. The field is calculated by applying a directed walk search on a tetrahedral mesh of known potentials and then interpolating the value. This talk will present an overview of the DMC status and a comparison of the charge portion of the DMC to experimental data of electron-hole pair propagation in germanium.

  5. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers

    NASA Astrophysics Data System (ADS)

    Sun, Baichuan; Barnard, Amanda S.

    2016-07-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove

  6. Interaction of charge carriers with lattice and molecular phonons in crystalline pentacene

    NASA Astrophysics Data System (ADS)

    Girlando, Alberto; Grisanti, Luca; Masino, Matteo; Brillante, Aldo; Della Valle, Raffaele G.; Venuti, Elisabetta

    2011-08-01

    The computational protocol we have developed for the calculation of local (Holstein) and non-local (Peierls) carrier-phonon coupling in molecular organic semiconductors is applied to both the low temperature and high temperature bulk crystalline phases of pentacene. The electronic structure is calculated by the semimpirical INDO/S (Intermediate Neglect of Differential Overlap with Spectroscopic parametrization) method. In the phonon description, the rigid molecule approximation is removed, allowing mixing of low-frequency intra-molecular modes with inter-molecular (lattice) phonons. A clear distinction remains between the low-frequency phonons, which essentially modulate the transfer integral from a molecule to another (Peierls coupling), and the high-frequency intra-molecular phonons, which modulate the on-site energy (Holstein coupling). The results of calculation agree well with the values extracted from experiment. The comparison with similar calculations made for rubrene allows us to discuss the implications for the current models of mobility.

  7. Measurement of charge-carrier concentration in indium phosphide by means of an electrolyte-semiconductor contact

    SciTech Connect

    Asanov, O.M.; Gaman, V.I.; Zorkal'tseva, N.N.; Korableva, T.V.; Petrova, N.G.

    1987-11-01

    An electrolyte-semiconductor contact is used to study the conductivity of epitaxial layers and single crystals of n-type indium phosphide obtained by gas transport. Some of the specimens were alloyed with tin and sulfur. The volt-farad characteristics are used to find the potentials of planar zones, which amount to 0.8-1.3 V for different electrolytes. Values of concentration of charge carriers calculated from measured values of capacitance of the electrolyte-indium-phosphide contact showed good agreement with measurements of the Hall effect on single crystals in the range 10/sup 16/-10/sup 18/ cm/sup -3/. The use of measurements of the capacitance of the electrolyte-semiconductor contact with simultaneous etching of a local region made it possible to study the electron distribution in epitaxial layers of indium phosphide.

  8. Redox-active charge carriers of conducting polymers as a tuner of conductivity and its potential window.

    PubMed

    Park, Han-Saem; Ko, Seo-Jin; Park, Jeong-Seok; Kim, Jin Young; Song, Hyun-Kon

    2013-01-01

    Electric conductivity of conducting polymers has been steadily enhanced towards a level worthy of being called its alias, "synthetic metal". PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate)), as a representative conducting polymer, recently reached around 3,000 S cm(-1), the value to open the possibility to replace transparent conductive oxides. The leading strategy to drive the conductivity increase is solvent annealing in which aqueous solution of PEDOT:PSS is treated with an assistant solvent such as DMSO (dimethyl sulfoxide). In addition to the conductivity enhancement, we found that the potential range in which PEDOT:PSS is conductive is tuned wider into a negative potential direction by the DMSO-annealing. Also, the increase in a redox-active fraction of charge carriers is proposed to be responsible for the enhancement of conductivity in the solvent annealing process. PMID:23949091

  9. Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier.

    PubMed

    Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

    2014-01-01

    The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm(-2), which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels. PMID:24504242

  10. Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects

    NASA Astrophysics Data System (ADS)

    Abgaryan, K. K.; Reviznikov, D. L.

    2016-01-01

    A three-level scheme for modeling nanosized semiconductor heterostructures with account for spontaneous and piezoelectric polarization effects is presented. The scheme combines quantummechanical calculations at the atomic level for obtaining the charge density on heterointerfaces, calculation of the distribution of carriers in the heterostructure based on the solution to the Schrödinger and Poisson equations, and the calculation of electron mobility in the two-dimensional electron gas with account for various scattering mechanisms. To speed up the computations of electron density in the heterostructure, the approach based on the approximation of the nonlinear dependence of the electron density on the potential in combination with the linearization of the Poisson equation is used. The efficiency of this approach in problems of the class in question is demonstrated.

  11. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  12. Eigen function and corresponding eigen values of charge carriers in V-grooves quantum wires with variable width

    NASA Astrophysics Data System (ADS)

    Zaheri, Ali Hossein Mohammad

    2016-06-01

    In this work, we have calculated analytically the energy spectra of electrons and holes in V-grooves quantum wires. To modify wire structure, we have used the equations which suggested in the work of Inoshita et al. We introduce a new effective potential scheme which is applicable and matchable with actual interface geometry of this groove of ridge quantum wires. By applying this effective potential and considering a suitable transformed coordinate that allows the decoupling of the two-dimensional wave functions, we have calculated eigen values of the charge carriers in three states as well as the wave functions. We found that by increasing the curvature at the top of quantum wire (b) the energy eigen value decreases. Our results are in good agreement with the earlier investigations.

  13. Empirical in operando analysis of the charge carrier dynamics in hematite photoanodes by PEIS, IMPS and IMVS.

    PubMed

    Klotz, Dino; Ellis, David Shai; Dotan, Hen; Rothschild, Avner

    2016-09-14

    In this Perspective, we introduce intensity modulated photocurrent/voltage spectroscopy (IMPS and IMVS) as powerful tools for the analysis of charge carrier dynamics in photoelectrochemical (PEC) cells for solar water splitting, taking hematite (α-Fe2O3) photoanodes as a case study. We complete the picture by including photoelectrochemical impedance spectroscopy (PEIS) and linking the trio of PEIS, IMPS and IMVS, introduced here as photoelectrochemical immittance triplets (PIT), both mathematically and phenomenologically, demonstrating what conclusions can be extracted from these measurements. A novel way of analyzing the results by an empirical approach with minimal presumptions is introduced, using the distribution of relaxation times (DRT) function. The DRT approach is compared to conventional analysis approaches that are based on physical models and therefore come with model presumptions. This work uses a thin film hematite photoanode as a model system, but the approach can be applied to other PEC systems as well. PMID:27524381

  14. Redox-active charge carriers of conducting polymers as a tuner of conductivity and its potential window

    PubMed Central

    Park, Han-Saem; Ko, Seo-Jin; Park, Jeong-Seok; Kim, Jin Young; Song, Hyun-Kon

    2013-01-01

    Electric conductivity of conducting polymers has been steadily enhanced towards a level worthy of being called its alias, “synthetic metal”. PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate)), as a representative conducting polymer, recently reached around 3,000 S cm−1, the value to open the possibility to replace transparent conductive oxides. The leading strategy to drive the conductivity increase is solvent annealing in which aqueous solution of PEDOT:PSS is treated with an assistant solvent such as DMSO (dimethyl sulfoxide). In addition to the conductivity enhancement, we found that the potential range in which PEDOT:PSS is conductive is tuned wider into a negative potential direction by the DMSO-annealing. Also, the increase in a redox-active fraction of charge carriers is proposed to be responsible for the enhancement of conductivity in the solvent annealing process. PMID:23949091

  15. Infrared spectroscopic studies on the cluster size dependence of charge carrier structure in nitrous oxide cluster anions.

    PubMed

    Thompson, Michael C; Weber, J Mathias

    2016-03-14

    We report infrared photodissociation spectra of nitrous oxide cluster anions of the form (N2O)nO(-) (n = 1-12) and (N2O)n (-) (n = 7-15) in the region 800-1600 cm(-1). The charge carriers in these ions are NNO2 (-) and O(-) for (N2O)nO(-) clusters with a solvation induced core ion switch, and N2O(-) for (N2O)n (-) clusters. The N-N and N-O stretching vibrations of N2O(-) (solvated by N2O) are reported for the first time, and they are found at (1595 ± 3) cm(-1) and (894 ± 5) cm(-1), respectively. We interpret our infrared spectra by comparison with the existing photoelectron spectroscopy data and with computational data in the framework of density functional theory. PMID:26979688

  16. Electric Charge Transfer and Scattering of Its Carriers in Cuprates of the 1-2-3 System

    NASA Astrophysics Data System (ADS)

    Vovk, R. V.; Khadzhai, G. Ya.; Dobrovolskiy, O. V.; Kamchatnaya, S. N.; Nazyrov, Z. F.

    2016-04-01

    We show that the temperature dependences of the basal-plane electrical resistance in cuprates of the 1-2-3 system can be described as a consequence of scattering of charge carriers on phonons and defects in conjunction with the fluctuation conductivity. The electron-phonon parameters values deduced from fitting the experimental data to recognized models are close to those for metallic alloys of complex composition. It is revealed that at a large oxygen deficit (low superconducting transition temperatures T_c), the superconducting behavior of the studied cuprates has similarities with that of complex superconducting alloys. At the optimum oxygen deficit (maximal T_cs), superconductivity in the investigated cuprates is likely governed by some other mechanisms.

  17. Infrared spectroscopic studies on the cluster size dependence of charge carrier structure in nitrous oxide cluster anions

    NASA Astrophysics Data System (ADS)

    Thompson, Michael C.; Weber, J. Mathias

    2016-03-01

    We report infrared photodissociation spectra of nitrous oxide cluster anions of the form (N2O)nO- (n = 1-12) and (N2O)n- (n = 7-15) in the region 800-1600 cm-1. The charge carriers in these ions are NNO2- and O- for (N2O)nO- clusters with a solvation induced core ion switch, and N2O- for (N2O)n- clusters. The N-N and N-O stretching vibrations of N2O- (solvated by N2O) are reported for the first time, and they are found at (1595 ± 3) cm-1 and (894 ± 5) cm-1, respectively. We interpret our infrared spectra by comparison with the existing photoelectron spectroscopy data and with computational data in the framework of density functional theory.

  18. Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

    2014-02-01

    The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm-2, which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels.

  19. Charge Carriers in Planar and Meso-Structured Organic-Inorganic Perovskites: Mobilities, Lifetimes, and Concentrations of Trap States.

    PubMed

    Hutter, Eline M; Eperon, Giles E; Stranks, Samuel D; Savenije, Tom J

    2015-08-01

    Efficient solar cells have been obtained using thin films of solution-processed organic-inorganic perovskites. However, there remains limited knowledge about the relationship between preparation route and optoelectronic properties. We use complementary time-resolved microwave conductivity (TRMC) and photoluminescence (PL) measurements to investigate the charge carrier dynamics in thin planar films of CH3NH3PbI(3-x)Cl(x), CH3NH3PbI3, and their meso-structured analogues. High mobilities close to 30 cm(2)/(V s) and microsecond-long lifetimes are found in thin films of CH3NH3PbI(3-x)Cl(x), compared to lifetimes of only a few hundred nanoseconds in CH3NH3PbI3 and meso-structured perovskites. We describe our TRMC and PL experiments with a global kinetic model, using one set of kinetic parameters characteristic for each sample. We find that the trap density is less than 5 × 10(14) cm(-3) in CH3NH3PbI(3-x)Cl(x), 6 × 10(16) cm(-3) in the CH3NH3PbI3 thin film and ca. 10(15) cm(-3) in both meso-structured perovskites. Furthermore, our results imply that band-to-band recombination is enhanced by the presence of dark carriers resulting from unintentional doping of the perovskites. Finally, our general approach to determine concentrations of trap states and dark carriers is also highly relevant to other semiconductor materials. PMID:26267206

  20. Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures.

    PubMed

    Ding, Yuchen; Singh, Vivek; Goodman, Samuel M; Nagpal, Prashant

    2014-12-18

    The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V(-1) s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors. PMID:26273976

  1. Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

    SciTech Connect

    Gaubas, E.; Ceponis, T.; Jasiunas, A.; Uleckas, A.; Vaitkus, J.; Cortina, E.; Militaru, O.

    2012-12-03

    The in situ examination of barrier capacitance charging, of generation and drift currents, and of carrier lifetime in Si structures during 25 MeV neutrons irradiation has been implemented to correlate radiation induced changes in carrier recombination, thermal release, and drift characteristics and to clarify their impact on detector performance. It has been shown that microwave probed photo-conductivity technique implemented in contact-less and distant manner can be a powerful tool for examination in wide dynamic range of carrier lifetime modified by radiation defects and for rather precise prediction of detector performance.

  2. Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series

    SciTech Connect

    Aleksandrova, E. L.; Ivanov, A. G. Geller, N. M. Shamanin, V. V.

    2010-05-15

    Photophysical properties of new polytetra- and polydisalicylidene azomethines (PSAMs) with chains containing Si, Ge, Sn, or transition metal atoms and atoms of a number of other divalent metals are studied. Based on data on ultraviolet and infrared spectra, it was found that the noncovalent transannular donor-acceptor interaction N M (M is semimetal or metal) occurs in polymers, which leads to the formation of a polymer chain of six-membered cycles. As a result, polyconjugations arise in PSAMs by a 'non-classical' mechanism. Due to multiple donor-acceptor interactions of unshared electron pairs of azomethine groups with vacant d-orbitals in metals, polymers feature conductive, photosensitive, and photoconductive properties. The photosensitivity and quantum yield of photogeneration of free charge carriers for PSAMs are close to the values characteristic of classical conducting polymers. It was shown that the PSAM properties are controlled by the azomethine fragment structure and acceptor properties of metal. A mechanism of free carrier photogeneration was suggested.

  3. Molecular weight dependent charge carrier mobility in poly(3,3' '-dioctyl-2,2':5',2' '-terthiophene).

    PubMed

    Verilhac, Jean-Marie; Pokrop, Rafal; LeBlevennec, Gilles; Kulszewicz-Bajer, Irena; Buga, Katarzyna; Zagorska, Malgorzata; Sadki, Said; Pron, Adam

    2006-07-13

    Poly(3,3' '-dioctyl-2,2':5',2' '-terthiophene), a polymer recently used for the fabrication of organic field effect transistors, has been fractionated into five fractions distinctly differing in their molecular weights (Mn), with the goal of determining the influence of the degree of polymerization (DPn) on its principal physicochemical parameters. It has been demonstrated that within the Mn range studied (from 1.5 kDa to 10.5 kDa by SEC), corresponding to DPn from 10 to 38, the polymer band gap steadily decreases with growing molecular weight, which is clearly manifested by an increasing bathochromic shift of the band originating from the pi-pi* transition. The same trend is observed for the HOMO level, determined from the onset of the p-doping in cyclic voltammetry, which shifts from -5.10 eV to -4.90 eV for the lowest and the highest molecular weight fractions, respectively. The most pronounced influence of DPn has been found for the charge carriers' mobility-one of the most important parameters of field effect transistors (FETs) fabricated from this polymer. A fourfold increase in DPn results in an increase of the carriers' mobility by more than 3 orders of magnitude. Comparison of these results with those obtained for fractionated regioregular poly(3-hexylthiophene) shows a strikingly similar behavior of both polymers with respect to the molecular weight. PMID:16821847

  4. Photoinduced Charge Carrier Generation and Decay in Sequentially Deposited Polymer/Fullerene Layers: Bulk Heterojunction vs. Planar Interface

    SciTech Connect

    Nardes, A.; Ayzner, A.; Hammond, S.; Ferguson, A.; Schwartz, B.; Kopidakis, N.

    2012-04-05

    In this work, we use the time-resolved microwave conductivity (TRMC) technique to study the dynamics of charge carrier generation in sequentially deposited conjugated polymer/fullerene layers. These layers are either fully solution-processed, using orthogonal solvents for the layers of the polymer poly(3-hexylthiophene) (P3HT) and the fullerene phenyl-C{sup 61}-butyric acid methyl ester (PCBM), or prepared by thermally evaporating a C{sup 60} layer onto P3HT films. Our work is motivated by the remarkable efficiency of organic photovoltaic (OPV) devices using a sequentially processed P3HT/PCBM active layer. Here we use an electrodeless photoconductivity probe, so we can photoexcite the sample either through the polymer or the fullerene layer. We use samples with extremely thick P3HT films (2.4 {micro}m) and show that excitation from either side of both as-cast and thermally annealed sample yields virtually identical results, consistent with mixing of the PCBM into the polymer film. We also compare solution-deposited samples to samples made by thermally evaporating C{sup 60} on P3HT, and find that we can distinguish between charge generation in bulk-P3HT and at the polymer/fullerene interface. We show that, despite their morphological differences, the carrier dynamics in the sequentially processed samples resemble those of mixed, bulk heterojunction (BHJ) systems. All of this is consistent with the idea that PCBM readily mixes into the P3HT film in sequentially deposited P3HT/PCBM samples, although the total amount of fullerene mixed into the P3HT appears to be less than that typically used in an optimized BHJ. Finally, we discuss the implications for OPV device architectures prepared by sequential deposition from solution.

  5. Charge carrier transport in thin films of colloidal CdSe quantum rods

    NASA Astrophysics Data System (ADS)

    Persano, A.; Leo, G.; Manna, L.; Cola, A.

    2008-10-01

    Phototransport properties of organically capped colloidal CdSe quantum rod thin films deposited by spin coating are studied in air at room temperature in planar electrode configuration. Under optical excitation, the observed current-voltage characteristics and current transients are well described by a resonant tunneling model. A significant and irreversible current quenching of the photoresponse occurs with either the aging of the samples or the flowing of the current itself when above few picoamperes. The process, which is still interpreted in the frame of the model, can be attributed to the charge trapping by the defect states at the barrier between rods with a consequent increase in the barrier height.

  6. Reversible chemical tuning of charge carriers for enhanced photoelectrochemical conversion and probing of living cells.

    PubMed

    Wang, Yongcheng; Tang, Jing; Zhou, Tong; Da, Peimei; Li, Jun; Kong, Biao; Yang, Zhongqin; Zheng, Gengfeng

    2014-12-10

    A facile, solution method for reversible tuning of oxygen vacancies inside TiO2 nanowires, in which the reducing treatment of TiO2 by NaBH4 leads to 2.4-fold increase of photocurrent density, compared to pristine TiO2 nanowires, is reported. Subsequent oxidizing treatment using KMnO4 or annealing in air can reset the photocurrent density to the original values. The incident photo-to-current conversion efficiency measurement exhibits that the reduced TiO2 nanowires present both enhanced photoactivity in both UV and visible regions. Density functional theory calculations reveal that the oxygen vacancies in the reduced TiO2 cause defect states in the band structure and result in enhanced carrier density and conductivity. In addition, the enhanced solar energy-driven photoelectrochemical conversion allows real-time, sensitive chemical probing of living cells that are directly grown on the TiO2 nanowire photoanodes. As proofs-of-concept, after functionalized with horseradish peroxidase (HRP) on the surface, the reduced TiO2 NWs demonstrate sensitive, real-time monitoring of the H2O2 levels in several distinctive living cell lines, with the lowest detectable H2O2 concentration of 7.7 nM. This reversible tuning of oxygen vacancies suggests a facile means for transition metal oxides, with enhanced photoconversion activity and electrochemical sensitivity. PMID:25044916

  7. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    NASA Astrophysics Data System (ADS)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-01

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  8. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  9. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    PubMed Central

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-01-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD. PMID:26899474

  10. Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

    NASA Astrophysics Data System (ADS)

    Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

    2016-02-01

    Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

  11. Efficient charge-carrier extraction from Ag2S quantum dots prepared by the SILAR method for utilization of multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M. J.

    2015-01-01

    The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the

  12. Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

    2016-08-01

    We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

  13. Towards high charge-carrier mobilities by rational design of the shape and periphery of discotics.

    PubMed

    Feng, Xinliang; Marcon, Valentina; Pisula, Wojciech; Hansen, Michael Ryan; Kirkpatrick, James; Grozema, Ferdinand; Andrienko, Denis; Kremer, Kurt; Müllen, Klaus

    2009-05-01

    Discotic liquid crystals are a promising class of materials for molecular electronics thanks to their self-organization and charge transporting properties. The best discotics so far are built around the coronene unit and possess six-fold symmetry. In the discotic phase six-fold-symmetric molecules stack with an average twist of 30 degrees, whereas the angle that would lead to the greatest electronic coupling is 60 degrees. Here, a molecule with three-fold symmetry and alternating hydrophilic/hydrophobic side chains is synthesized and X-ray scattering is used to prove the formation of the desired helical microstructure. Time-resolved microwave-conductivity measurements show that the material has indeed a very high mobility, 0.2 cm(2) V(-1) s(-1). The assemblies of molecules are simulated using molecular dynamics, confirming the model deduced from X-ray scattering. The simulated structures, together with quantum-chemical techniques, prove that mobility is still limited by structural defects and that a defect-free assembly could lead to mobilities in excess of 10 cm(2) V(-1) s(-1). PMID:19363476

  14. Effect of Fluorine Substitution on the Charge Carrier Dynamics of Benzothiadiazole-Based Solar Cell Materials.

    PubMed

    Kim, In-Sik; Kim, In-Bok; Kim, Dong-Yu; Kwon, Seong-Hoon; Ko, Do-Kyeong

    2016-08-01

    The femtosecond transient absorption (TA) characterization of a new benzothiadiazole (BT)-based donor-acceptor conjugated copolymer, poly[(2,6-dithieno[3,2-b:2',3'-d]thiophene)-alt-(4,7-di(4-octyldodecylthiopen-2-yl)-2,1,3-benzo[c][1,2,5]thiadiazole (PBT), as well as its fluorinated derivatives, PFBT and PDFBT, is carried out. Additionally, bulk heterojunction (BHJ) films consisting of the copolymers and [6,6]-phenyl-C71 -butylic acid methyl ester (PC70 BM) are examined using TA spectroscopy. Both the singlet excited state dynamics in the copolymers and the charge transfer state dynamics in the BHJs are investigated in terms of fluorination dependency; the fluorinated copolymers exhibit less singlet exciton recombination rate than the fluorine-free copolymer, and the BHJs including the fluorinated copolymers display slower monomolecular recombination than the fluorine-free analogue. Furthermore, the excitation-intensity-dependent TA dynamics of the copolymers and BHJs is investigated, revealing that, when sufficiently high excitation intensity is used to induce annihilation processes, the fluorinated copolymers and BHJs incorporating the fluorinated copolymers show more rapid TA decay ascribable to morphological enhancement. These TA spectroscopic findings are found to correlate with the device characteristics with respect to fluorinated content in the polymer solar cells. In particular, both the short-circuit current density and fill factor of BHJ solar cells correspond closely with the fast decay parameters of the BHJ films under high excitation intensity. PMID:27226245

  15. Spin dynamics of charge carriers in the process of their localization in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} single crystals

    SciTech Connect

    Morgunov, R. B. Dmitriev, A. I.; Chernen'kaya, A. S.; Yakushi, K.; Yamamoto, K.; Tanimoto, Y.

    2010-11-15

    Sharp changes in the integral intensity and linewidth of the ESR spectrum that accompany the localization of the charge carriers have been revealed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} crystals. It has been found that the types of localization in two compounds under investigation are different: charge carriers in {beta}''-(BEDT-TTF){sub 4}NH{sub 4}[Cr(C{sub 2}O{sub 4}){sub 3}] are localized on irregular defects of the crystal lattice, whereas charge carriers in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} are localized at the regular positions of the unit cell. The exchange narrowing of the ESR line and a sharp decrease in the dc and ac magnetic susceptibilities are observed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} at low temperatures T < 50 K. The dc and ac magnetic susceptibilities observed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} at high temperatures T > 50 K differ from each other, because the thermally activated hopping frequency of the charge carriers is higher than the frequency of the measuring UHF field of an ESR spectrometer.

  16. Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications. Ph.D. Thesis - Washington Univ., Saint Louis, Mo.

    NASA Technical Reports Server (NTRS)

    Heyman, J. S.

    1975-01-01

    Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

  17. Charge carrier transport mechanisms in perovskite CdTiO{sub 3} fibers

    SciTech Connect

    Imran, Z.; Rafiq, M. A. Hasan, M. M.

    2014-06-15

    Electrical transport properties of electrospun cadmium titanate (CdTiO{sub 3}) fibers have been investigated using ac and dc measurements. Air annealing of as spun fibers at 1000 °C yielded the single phase perovskite fibers having diameter ∼600 nm - 800 nm. Both the ac and dc electrical measurements were carried out at temperatures from 200 K – 420 K. The complex impedance plane plots revealed a single semicircular arc which indicates the interfacial effect due to grain boundaries of fibers. The dielectric properties obey the Maxwell-Wagner theory of interfacial polarization. In dc transport study at low voltages, data show Ohmic like behavior followed by space charge limited current (SCLC) with traps at higher voltages at all temperatures (200 K – 420 K). Trap density in our fibers system is N{sub t} = 6.27 × 10{sup 17} /cm{sup 3}. Conduction mechanism in the sample is governed by 3-D variable range hopping (VRH) from 200 K – 300 K. The localized density of states were found to be N(E{sub F}) = 5.51 × 10{sup 21} eV{sup −1} cm{sup −3} at 2 V. Other VRH parameters such as hopping distance (R{sub hop}) and hopping energy (W{sub hop}) were also calculated. In the high temperature range of 320 K – 420 K, conductivity follows the Arrhenius law. The activation energy found at 2 V is 0.10 eV. Temperature dependent and higher values of dielectric constant make the perovskite CdTiO{sub 3} fibers efficient material for capacitive energy storage devices.

  18. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  19. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  20. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    SciTech Connect

    Han, S.S.

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with {sup 241}Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He{sup +} or 10-MeV Si{sup 3+}. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair ({epsilon}{sub di}) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  1. Spatial Separation of Charge Carriers in In2O3-x(OH)y Nanocrystal Superstructures for Enhanced Gas-Phase Photocatalytic Activity.

    PubMed

    He, Le; Wood, Thomas E; Wu, Bo; Dong, Yuchan; Hoch, Laura B; Reyes, Laura M; Wang, Di; Kübel, Christian; Qian, Chenxi; Jia, Jia; Liao, Kristine; O'Brien, Paul G; Sandhel, Amit; Loh, Joel Y Y; Szymanski, Paul; Kherani, Nazir P; Sum, Tze Chien; Mims, Charles A; Ozin, Geoffrey A

    2016-05-24

    The development of strategies for increasing the lifetime of photoexcited charge carriers in nanostructured metal oxide semiconductors is important for enhancing their photocatalytic activity. Intensive efforts have been made in tailoring the properties of the nanostructured photocatalysts through different ways, mainly including band-structure engineering, doping, catalyst-support interaction, and loading cocatalysts. In liquid-phase photocatalytic dye degradation and water splitting, it was recently found that nanocrystal superstructure based semiconductors exhibited improved spatial separation of photoexcited charge carriers and enhanced photocatalytic performance. Nevertheless, it remains unknown whether this strategy is applicable in gas-phase photocatalysis. Using porous indium oxide nanorods in catalyzing the reverse water-gas shift reaction as a model system, we demonstrate here that assembling semiconductor nanocrystals into superstructures can also promote gas-phase photocatalytic processes. Transient absorption studies prove that the improved activity is a result of prolonged photoexcited charge carrier lifetimes due to the charge transfer within the nanocrystal network comprising the nanorods. Our study reveals that the spatial charge separation within the nanocrystal networks could also benefit gas-phase photocatalysis and sheds light on the design principles of efficient nanocrystal superstructure based photocatalysts. PMID:27159793

  2. Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

    NASA Astrophysics Data System (ADS)

    Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2014-08-01

    The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

  3. Formation and decay of charge carriers in aggregate nanofibers consisting of poly(3-hexylthiophene)-coated gold nanoparticles.

    PubMed

    Lee, Dongki; Lee, Jaewon; Song, Ki-Hee; Rhee, Hanju; Jang, Du-Jeon

    2016-01-21

    Thin nanofibers (NFs) of J-dominant aggregates with a thickness of 15 nm and thick NFs of H-dominant aggregates with a thickness of 25 nm were fabricated by the self-assembly of poly(3-hexylthiophene)-coated gold nanoparticles. The formation and decay dynamics of the charge carriers, which are dependent on the aggregate types of NFs, was investigated by time-resolved emission and transient-absorption spectroscopy. With increasing excitation energy, the fraction of the fast emission decay component decreased, suggesting that the fast formation of polaron pairs (PP), localized (LP), and delocalized polarons (DP) results from higher singlet exciton states produced by the singlet fusion. The faster decay dynamics of DP and LP in the thick NFs than in thin NFs is due to the increased delocalization of DP and LP. As the interchain aggregation is weaker than intrachain aggregation, PP decays faster in thin NFs than in thick NFs. In both thin and thick NFs, although triplet (T1) excitons were barely observed with excitation at 532 nm on a nanosecond time scale, they were observed with excitation at 355 nm, showing that T1 excitons within NFs are generated mainly through the singlet fission from a higher singlet exciton state rather than through intersystem crossing. PMID:26691880

  4. Probing molecular packing at engineered interfaces in organic field effect transistor and its correlation with charge carrier mobility.

    PubMed

    Maheshwari, Priya; Mukherjee, Saurabh; Bhattacharya, Debarati; Sen, Shashwati; Tokas, Raj Bahadur; Honda, Yoshihide; Basu, Saibal; Padma, Narayanan; Pujari, Pradeep Kumar

    2015-05-20

    Surface engineering of SiO2 dielectric using different self-assembled monolayer (SAM) has been carried out, and its effect on the molecular packing and growth behavior of copper phthalocyanine (CuPc) has been studied. A correlation between the growth behavior and performance of organic field effect transistors is examined. Depth profiling using positron annihilation and X-ray reflectivity techniques has been employed to characterize the interface between CuPc and the modified and/or unmodified dielectric. We observe the presence of structural defects or disorder due to disorientation of CuPc molecules on the unmodified dielectric and ordered arrangement on the modified dielectrics, consistent with the high charge carrier mobility in organic field effect transistors in the latter. The study also highlights the sensitivity of these techniques to the packing of CuPc molecules on SiO2 modified using different SAMs. Our study also signifies the sensitivity and utility of these two techniques in the characterization of buried interfaces in organic devices. PMID:25922969

  5. Relaxation of stored charge carriers in a Zn sub 0. 3 Cd sub 0. 7 Se mixed crystal

    SciTech Connect

    Lin, J.Y.; Jiang, H.X. )

    1990-03-15

    Persistent photoconductivity (PPC) has been investigated in detail in a Zn{sub 0.3}Cd{sub 0.7}Se mixed crystal. Two different temperature conductivity states have been observed. Relaxation of stored charge carriers, which contribute to PPC, has been studied at different conditions. We find that the decay of PPC follows the stretched-exponential'' function that is usually observed in a wide class of disordered materials. At {ital T}{lt}220 K, the relaxation time increases with increase of temperature. At a constant temperature, the relaxation time increases with increase of excitation photon dose, which is a consequence of the presence of the two different conductivity states. However, at a constant temperature, the decay exponent is excitation-photon-dose independent, while the characteristic decay time constant depends on excitation photon dose. The PPC observed here thus exhibits characteristic phenomena of disordered systems, which suggests that the random local-potential fluctuations, which arise from the compositional fluctuations, are responsible for PPC. PPC-decay behavior is also analyzed for some of the previously published data on other materials. We find that the stretched-exponential function describes the PPC decay in various materials at low temperatures.

  6. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  7. Photoconductivity of CdTe Nanocrystal-Based Thin Films: Te(2-) Ligands Lead To Charge Carrier Diffusion Lengths Over 2 μm.

    PubMed

    Crisp, Ryan W; Callahan, Rebecca; Reid, Obadiah G; Dolzhnikov, Dmitriy S; Talapin, Dmitri V; Rumbles, Garry; Luther, Joseph M; Kopidakis, Nikos

    2015-12-01

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm(2)/(V s)). Our TRMC findings show that Te(2-) capped CdTe NCs show a marked improvement in carrier mobility (11 cm(2)/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films. PMID:26571095

  8. Ultrafast terahertz probe of photoexcited free charge carriers in organometal CH3NH3PbI3 perovskite thin film

    NASA Astrophysics Data System (ADS)

    Yan, Huijie; An, Baoli; Fan, Zhengfu; Zhu, Xiaoya; Lin, Xian; Jin, Zuanming; Ma, Guohong

    2016-04-01

    By using optical pump-terahertz probe (OPTP) experiments, we study the free charge carrier dynamics in photoexcited drop-cast CH3NH3PbI3-based perovskite thin film at room temperature. Compared with the pump photon energy at 1.55 eV, the measured OPTP signal following excitation of 3.1 eV shows an additional fast decay channel of the photoconductivity. Our experimental results demonstrate that effective carrier lifetime can be strongly modulated by surface recombination. In addition, the Drude-Smith-like transient terahertz photoconductivity spectra suggest that photogenerated free carriers experience backscattering at grain boundaries in our solution-processed perovskite films studied here.

  9. Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

    SciTech Connect

    Mezdrogina, M. M. Krivolapchuk, V. V.; Kozhanova, Yu. V.

    2008-02-15

    By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite GaN crystals doped with Sm, Eu, Er, or Tm is governed by the type and concentration of defects in the initial semiconductor matrix as well as by the type of the impurity (its capacity for segregation). Doping with multicharged rare-earth impurities and additionally introduced Zn impurity leads to an intensification of emission. The effect of intensification of emission in the case of n-and p-GaN crystals is considered with the use of the model of isoelectronic traps.

  10. The effects of metallicity, radiation field and dust extinction on the charge state of PAHs in diffuse clouds: implications for the DIB carrier

    NASA Astrophysics Data System (ADS)

    Cox, N. L. J.; Spaans, M.

    2006-06-01

    Context.The unidentified diffuse interstellar bands (DIB) are observed throughout the Galaxy, the Local Group and beyond. Their carriers are possibly related to complex carbonaceous gas-phase molecules, such as (cationic) polycyclic aromatic hydrocarbons and fullerenes. Aims.In order to reveal the identity of the DIB carrier we investigate the effects of metallicity, radiation field and extinction curve on the PAH charge state distribution, and thus the theoretical emergent PAH spectrum, in diffuse interstellar clouds. This behaviour can then be linked to that of the DIB carrier, thus giving insight into its identity. Methods.We use radiative transfer and chemical models to compute the physical and chemical conditions in diffuse clouds with Galactic and Magellanic Cloud types of interstellar dust and gas. Subsequently, the PAH charge state distributions throughout these clouds are determined. Results.We find that the fraction of PAH cations is much higher in the Magellanic Cloud environments than in the Milky Way, caused predominantly by the respective lower metallicities, and mitigated by the steeper UV extinction curve. The fraction of anions is much lower in a low metallicity environment. The predicted DIB strength of cationic PAH carriers is similar to that of the Milk Way for the LMC and 40% for the SMC due to the overall metallicity. Stronger DIBs could be expected in the Magellanic Clouds if they emanate from clouds that are exposed to an average interstellar radiation field that is significantly stronger than in the Milky Way, although photo-destruction processes could possibly reduce this effect, especially for the smaller PAHs. Our results show that the presence and absence of DIB carriers in the Magellanic Cloud lines of sight can be tied to the PAH charge balance which is driven by metallicity, UV radiation and dust extinction effects.

  11. Singular effect of crystallite size on the charge carrier generation and photocatalytic activity of nano-TiO2

    NASA Astrophysics Data System (ADS)

    Strauss, Mathias; Pastorello, Murilo; Sigoli, Fernando A.; Silva, Juliana M. de Souza e.; Mazali, Italo O.

    2014-11-01

    Photocatalytic processes on nanometric titanium oxide have been extensively studied from the standpoint of solar energy utilization and remediation of water and gas streams polluted with organic molecules. It is accepted that TiO2 crystallite size and crystalline phase are among the parameters involved in the control of the photocatalytic activity. However, while changing the catalyst nanoparticle size, other attributes important to assess photocatalytic activity may be modified, making thus difficult to define to which extension the photoactivity changes are related only to size differences. Therefore, aiming at studying exclusively the size effect and the parameters directly related to size on the photocatalytic activity of nanometric TiO2, in this work it was explored a method to synthesize TiO2 nanoparticles with controlled size, highly similar morphology and comparable phase and degree of crystallinity. A set composed of four samples of nano-TiO2 loaded porous Vycor glass, each sample having a specific TiO2 nanoparticle size, was tested on the photoactivated process of depollution of solutions of salicylic acid and methylene blue. The photocatalytic activity observed for the organic compounds tested was inversely proportional to the TiO2 nanoparticle size. An opposite tendency was observed for the generation of OH radicals during photocatalyst illumination, as more radicals are formed on the material containing the larger TiO2 nanoparticles. Results of this study suggest that photocatalytic activity of nano-TiO2 is less favored by the enhanced light absorption response and the higher generation of oxidative species observed for the larger nanoparticles. Better catalysts were obtained when nano-TiO2 exhibited high surface-to-volume ratio and had small recombination volumes, which respectively favors pollutant adsorption-desorption on catalyst surface and reduce the number of recombined charge carriers.

  12. Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

    1993-01-01

    Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

  13. Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap?

    PubMed

    Liu, Jinxuan; Zhou, Wencai; Liu, Jianxi; Howard, Ian; Kilibarda, Goran; Schlabach, Sabine; Coupry, Damien; Addicoat, Matthew; Yoneda, Satoru; Tsutsui, Yusuke; Sakurai, Tsuneaki; Seki, Shu; Wang, Zhengbang; Lindemann, Peter; Redel, Engelbert; Heine, Thomas; Wöll, Christof

    2015-06-15

    For inorganic semiconductors crystalline order leads to a band structure which gives rise to drastic differences to the disordered material. An example is the presence of an indirect band gap. For organic semiconductors such effects are typically not considered, since the bands are normally flat, and the band-gap therefore is direct. Herein we show results from electronic structure calculations demonstrating that ordered arrays of porphyrins reveal a small dispersion of occupied and unoccupied bands leading to the formation of a small indirect band gap. We demonstrate herein that such ordered structures can be fabricated by liquid-phase epitaxy and that the corresponding crystalline organic semiconductors exhibit superior photophysical properties, including large charge-carrier mobility and an unusually large charge-carrier generation efficiency. We have fabricated a prototype organic photovoltaic device based on this novel material exhibiting a remarkable efficiency. PMID:25960115

  14. The role of charge-transfer integral in determining and engineering the carrier mobilities of 9,10-di(2-naphthyl)anthracene compounds

    NASA Astrophysics Data System (ADS)

    Tse, S. C.; So, S. K.; Yeung, M. Y.; Lo, C. F.; Wen, S. W.; Chen, C. H.

    2006-05-01

    The charge transporting properties of t-butylated 9,10-di(2-naphthyl)anthracene (ADN) compounds have been investigated experimentally and computationally in relation to their molecular structures. The ADN compounds are found to be ambipolar with both electron and hole mobilities in the range of 1-4 × 10 -7 cm 2 V -1 s -1 (electric field 0.5-0.8 MV/cm). As the degree of t-butylation increases, the carrier mobility decreases progressively. The mobility reduction was examined by Marcus theory of reorganization energies. All ADN compounds possess similar reorganization energies of ˜0.3 eV. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap.

  15. Estimation of charge-carrier concentration and ac conductivity scaling properties near the V-I phase transition of polycrystalline Na2 S O4

    NASA Astrophysics Data System (ADS)

    Ahmad, Mohamad M.

    2005-11-01

    The conductivity spectra of polycrystalline Na2SO4 have been investigated in the frequency range 42Hz-1MHz at different temperatures below and above the V-I phase transition temperature. The conductivity data have been analyzed using Almond-West formalism. The dc conductivity, the hopping frequency of the charge carriers, and their respective activation energies have been obtained from the analysis of the ac conductivity data, and the concentration of charge carriers was calculated at different temperatures. The power-law exponent n of the conductivity spectra has average values of 0.43 and 0.61 in phases V and I , respectively, which indicates different conduction properties in the two phases. Moreover, scaling of the conductivity spectra at the low- and high-temperature phases was performed in accord with Ghosh’s scaling approach. It is found that the scaling properties depend on the structure of the investigated material.

  16. Generation of charge carriers in C60 films by 100-fs laser pulses with photon energies above and below the mobility edge

    SciTech Connect

    Chekalin, Sergei V; Yartsev, A P; Sundstroem, V

    2001-05-31

    Primary stages of photoinduced processes are studied in C60 films excited by 100-fs laser pulses at wavelengths of 645 and 367 nm, the fraction of excited molecules being no more than several percent. Probing in the broad spectral range from 400 to 1100 nm showed that both charged (cations and electrons) and neutral (excited molecules) components were produced upon irradiation by the laser pulse. For both excitation wavelengths, charge carriers were produced due to direct optical excitation rather than due to singlet-singlet annihilation. Anions were produced with a delay of 10{sup -13} - 10{sup -11} s through electron trapping by C60 molecules. (femtosecond technologies)

  17. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    SciTech Connect

    Vishnyakov, A. V.; Stuchinsky, V. A. Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A.

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  18. The effect of CdSe/ZnS quantum dots on the rotational viscosity and charge carrier concentration of a nematic liquid crystal

    NASA Astrophysics Data System (ADS)

    Shcherbinin, D. P.; Konshina, E. A.; Solodkov, D. E.

    2015-08-01

    The addition of CdSe/ZnS quantum dots (QDs) with a core diameter of 3.5 nm at a concentration of 10 wt % leads to a 2.5-fold increase in the dynamic rotational viscosity of a 5CB nematic liquid crystal (NLC). A comparison of the diffusion currents in NLC cells filled with pure 5CB and a suspension with QDs shows evidence of an increase in the concentration of charge carriers in the latter case.

  19. Surfactant free fabrication and improved charge carrier separation induced enhanced photocatalytic activity of {001} facet exposed unique octagonal BiOCl nanosheets.

    PubMed

    Haider, Zeeshan; Zheng, Jin You; Kang, Young Soo

    2016-07-20

    Unique octagonal shaped BiOCl nanosheets (NS) dominantly exposed with high energy {001} crystal facets have been fabricated via a simple hydrothermal route without using organic surfactants. The dynamics of photogenerated charge carriers have been studied by time-resolved photoluminescence spectroscopy. The fitting parameters of the decay kinetics were used to calculate both the intensity weighted average lifetime (〈τ〉int.), as well as the amplitude weighted average lifetime (〈τ〉amp.) of the photogenerated charge carriers. The 〈τ〉int. and 〈τ〉amp. values for {001} BiOCl NS, i.e., 17.23 ns and 1.94 ns, respectively, were observed to be significantly higher than the corresponding values obtained for pristine BiOCl such as 2.52 ns and 1.07 ns, respectively. Significant quenching of the PL emission intensity of {001} BiOCl NS reflected the enhanced separation of the photogenerated charge carriers. Reduced thickness and in situ iodine doping was favorable to minimize the recombination tendency. The photocatalytic activity was monitored via the photodegradation of RhB under visible light illumination (λ > 400 nm). {001} BiOCl NS exhibited superior performance when compared to pristine BiOCl in terms of the rapid degradation kinetics and higher photonic efficiency. The photocatalytic efficiency of {001} BiOCl NS was 2.8 times higher than pristine BiOCl. Iodine doping induced extended the optical absorption in the visible region and improved the separation of the photogenerated charge carriers, which played an important role to enhance the photocatalytic activity. The photodegradation mechanism was systematically studied using various radical quenchers and it was revealed that photogenerated holes (h(+)) and superoxide radicals (˙O(2-)) actively participated whereas hydroxyl (OH˙) radicals had a negligible contribution in the photodegradation of RhB. {001} BiOCl NS has shown a higher photocurrent density and lower charge transfer resistance analyzed

  20. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    SciTech Connect

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  1. Behavior of charge carriers and excitons in multilayer organic light-emitting diodes made from a polysilane polymer as monitored with electroluminescence

    NASA Astrophysics Data System (ADS)

    Suzuki, Hiroyuki; Hoshino, Satoshi

    1996-01-01

    Using electroluminescence (EL) as a monitor, we have investigated the behavior of charge carriers injected from electrodes and excitons generated by the recombination of charge carriers in multilayer organic light-emitting diodes (LEDs) using poly(methylphenylsilane) (PMPS) as a hole transporting material. Our multilayer LEDs have two or three functional organic layers including Coumarin 6 [3-(2'-benzothiazolyl)-7-diethylaminocoumarin, abbreviated as C6] and/or tris-(8-hydroxyquinoline) aluminum layers as well as a PMPS layer. When the LEDs were fabricated, two parameters of the C6 layer were changed, the layer thickness (30-120 nm) and the dye concentration (1-100 wt %). We employed a combined analysis of the dependence of the EL spectra on the thickness and dye concentration of the C6 layer, the dye-selective fluorescence spectra and the current-voltage-EL characteristics, to reveal the thickness of the electron-hole capture zone and the behavior of charge carriers and excitons during operation in these LEDs.

  2. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

    SciTech Connect

    Dauffy, L S; Koch, J A

    2005-10-20

    This report investigates the use of x-rays and electrons to excite a CVD polycrystalline diamond detector during a double pulse experiment to levels corresponding to those expected during a successful (1D clean burn) and a typical failed ignition (2D fizzle) shot at the National Ignition Facility, NIF. The monitoring of a failed ignition shot is the main goal of the diagnostic, but nevertheless, the study of a successful ignition shot is also important. A first large neutron pulse is followed by a smaller pulse (a factor of 1000 smaller in intensity) after 50 to 300 ns. The charge carrier densities produced during a successful and failed ignition shot are about 10{sup 15} e-h+/cm{sup 3} and 2.6* 10{sup 12} e-h+/cm{sup 3} respectively, which is lower than the 10{sup 16} e-h+/cm{sup 3} needed to saturate the diamond wafer due to charge recombination. The charge carrier density and the signal induced in the diamond detector are calculated as a function of the incident x-ray and electron energy, flux, and detector dimensions. For available thicknesses of polycrystalline CVD diamond detectors (250 {micro}m to 1000 {micro}m), a flux of over 10{sup 11} x-rays/cm{sup 2} (with x-ray energies varying from 6 keV to about 10 keV) or 10{sup 9} {beta}/cm{sup 2} (corresponding to 400 pC per electron pulse, E{sub {beta}} > 800 keV) is necessary to excite the detector to sufficient levels to simulate a successful ignition's 14 MeV peak. Failed ignition levels would require lower fluxes, over 10{sup 8} x-rays/cm{sup 2} (6 to 10 keV) or 10{sup 6} {beta}/cm{sup 2} (1 pC per electron pulse, E{sub {beta}} > 800 keV). The incident pulse must be delivered on the detector surface in several nanoseconds. The second pulse requires fluxes down by a factor of 1000. Several possible x-ray beam facilities are investigated: (1) the LBNL Advanced Light Source, (2) the Stanford SLAC and SPEAR, (3) the BNL National Synchrotron Light Source, (4) the ANL Advanced Photon Source, (5) the LLNL Janus

  3. Theoretical studies on the carrier tunability of oxidized oligothiophenes.

    PubMed

    Pramanik, Anup; Sarkar, Pranab

    2015-10-28

    A first principles density functional theory calculation in combination with the non-equilibrium Green's function technique has been performed to show the carrier tunability of a family of thiophene-1,1-dioxide (TDO) oligomers. Our theoretical results interpret how the molecular length dictates the nature of charge carriers that has very recently been observed through thermopower measurement (Nat. Chem. , DOI: 10.1038/NCHEM.2160). Our molecular level understanding dictates that with increasing the conjugation length through the molecular backbone, it is the LUMO orbital which is stabilized more and thus participates in resonance tunneling with the gold electrode. Thus the HOMO resonating channel, which is the major transporting channel for TDO1, is shifted to the LUMO resonating channel in the case of TDO4. This carrier switching from a hole to an electron is unique for these types of organic materials. PMID:26395511

  4. Charge-carrier dynamics in polycrystalline thin-film CuIn1-xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-01

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn1-xGaxSe2 (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn1-xGaxSe2 (with x ≈ 0.3) as 22 ± 2 cm2(Vs)-1. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  5. Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-14

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  6. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te125 NMR measurements in complex tellurides

    DOE PAGESBeta

    Levin, E. M.

    2016-06-27

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T1, depends on both n and m* as 1/T1~(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*)2n2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficientmore » and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study AgxSbxGe50–2xTe50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

  7. Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Quandt, D.; Schulze, J.-H.; Schliwa, A.; Diemer, Z.; Prohl, C.; Lenz, A.; Eisele, H.; Strittmatter, A.; Pohl, U. W.; Gschrey, M.; Rodt, S.; Reitzenstein, S.; Bimberg, D.; Lehmann, M.; Weyland, M.

    2015-06-01

    Stacks of InAs/GaAs submonolayer depositions forming small In-rich islands are interesting for efficient optoelectronic applications due to the high areal density of localization centers and their fast carrier relaxation. The electronic confinement of charge carriers in InAs/GaAs submonolayers can be influenced by adding Sb during growth. Eight-band k .p simulations show that electrons and holes experience a different localization depending on where the Sb is incorporated into the submonolayer stacks. Samples grown with metalorganic vapor-phase epitaxy show sharp interfaces between InAs(Sb)/GaAs submonolayers and the surrounding matrix material in transmission electron microscopy and x-ray diffraction measurements. Cross-sectional scanning tunneling microscopy shows the formation of In-rich agglomerations as well as a slight clustering of Sb atoms. Temperature-dependent photoluminescence and spatially resolved cathodoluminescence show evidence for strong electronic confinement whose depth is controlled by the Sb amount.

  8. The effect of oxidation on charge carrier motion in PbS quantum dot thin films studied with Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Nguyen Hoang, Lan Phuong; Williams, Pheona; Moscatello, Jason; Aidala, Katherine E.; Aidala Group Team

    We developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in thin film devices. We investigate the effects of oxidation on thin films of Lead Sulfide (PbS) quantum dots with tetrabutyl-ammonium-iodide (TBAI) ligands in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin Probe Force Microscopy (KPFM) to measure the potential over time, we can record how the charge carriers respond to changing the backgate voltage with grounded source and drain electrodes. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the PbS film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We probe these trapped holes by applying different gate voltages and recording the change in potential at the surface. There are mixed reports about the effect of air exposure on thin films of PbS quantum dots, with initial exposure appearing to be beneficial to device characteristics. We study the change in current, mobility, and charge injection and extraction as measured by KPFM over hours and days of exposure to air. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  9. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    NASA Astrophysics Data System (ADS)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  10. Temperature effects on the energy bandgap and conductivity effective masses of charge carriers in lead telluride from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Venkatapathi, S.; Dong, B.; Hin, C.

    2014-07-01

    We determined the temperature effects on the electronic properties of lead telluride (PbTe) such as the energy bandgap and the effective masses of charge carriers by incorporating the structural changes of the material with temperature using ab-initio density functional theory (DFT) calculations. Though the first-principles DFT calculations are done at absolute zero temperatures, by incorporating the lattice thermal expansion and the distortion of Pb2+ ions from the equilibrium positions, we could determine the stable structural configuration of the PbTe system at different temperatures.

  11. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

  12. Balance between light trapping and charge carrier collection: Electro-photonic optimization of organic photovoltaics with ridge-patterned back electrodes

    NASA Astrophysics Data System (ADS)

    Liu, Yingchi; Tippets, Cary A.; Kirsch, Christoph; Mitran, Sorin; Samulski, Edward T.; Lopez, Rene

    2013-06-01

    Light trapping strategies are frequently suggested to improve organic photovoltaic (OPV) cell efficiencies. However, one cannot overlook the side-effects to charge carrier collection which are introduced when seeking optical enhancements. A comprehensive electro-photonic model is utilized to study the optical and electrical effects of patterning poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl

  13. Temperature effects on the energy bandgap and conductivity effective masses of charge carriers in lead telluride from first-principles calculations

    SciTech Connect

    Venkatapathi, S. Dong, B.; Hin, C.

    2014-07-07

    We determined the temperature effects on the electronic properties of lead telluride (PbTe) such as the energy bandgap and the effective masses of charge carriers by incorporating the structural changes of the material with temperature using ab-initio density functional theory (DFT) calculations. Though the first-principles DFT calculations are done at absolute zero temperatures, by incorporating the lattice thermal expansion and the distortion of Pb{sup 2+} ions from the equilibrium positions, we could determine the stable structural configuration of the PbTe system at different temperatures.

  14. Self-recovery of mechanoluminescence in ZnS:Cu and ZnS:Mn phosphors by trapping of drifting charge carriers

    NASA Astrophysics Data System (ADS)

    Chandra, V. K.; Chandra, B. P.; Jha, Piyush

    2013-10-01

    The long time dream of mechanoluminescence (ML) research to fabricate mechanoluminescence white light sources and mechanoluminescence displays seems to be turning into reality after the recent demonstration of highly bright and durable mechanoluminescent flexible composite films with a brightness of ≈120 cd/m2 and durability over ≈100 000 repeated mechanical stresses by using a combination of copper-doped zinc sulfide (ZnS:Cu) particles and polydimethylsiloxane. The present paper explores that self-recovery of mechanoluminescence of deforming piezoelectric semiconductors takes place by trapping of drifting charge carriers in the presence of piezoelectric field. This may be useful in enhancing the intensity and durability of ML devices.

  15. Self-assembly and charge carrier transport of solution-processed conjugated polymer monolayers on dielectric surfaces with controlled sub-nanometer roughness.

    PubMed

    Li, Mengmeng; Hinkel, Felix; Müllen, Klaus; Pisula, Wojciech

    2016-04-28

    In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics. PMID:27080325

  16. Improved solar-driven photocatalytic performance of BiOI decorated TiO2 benefiting from the separation properties of photo-induced charge carriers

    NASA Astrophysics Data System (ADS)

    Li, Jianzhang; Zhong, Junbo; Si, Yujun; Huang, Shengtian; Dou, Lin; Li, Minjiao; Liu, Yinping; Ding, Jie

    2016-02-01

    In this work, BiOI decorated TiO2 photocatalysts were prepared in-situ by a facile hydrothermal method and characterized by X-ray diffraction (XRD), UV/Vis diffuse reflectance spectroscopy, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and surface photovoltage (SPV) spectroscopy. The reactive radicals during the photocatalytic reaction were detected by scavenger experiments. BiOI/TiO2 composites exhibit higher performance than the pure TiO2 towards photocatalytic decolorization of methyl orange (MO) aqueous solution, when the molar ratio of Bi/Ti is 2%, the sample has the highest photocatalytic activity. The enhanced photocatalytic performance of BiOI/TiO2 could be ascribed to the separation properties of photo-induced charge carriers and strong interaction between BiOI and TiO2. Based on the observations, a Z-scheme charge separation mechanism was proposed.

  17. Self-assembly and charge carrier transport of solution-processed conjugated polymer monolayers on dielectric surfaces with controlled sub-nanometer roughness

    NASA Astrophysics Data System (ADS)

    Li, Mengmeng; Hinkel, Felix; Müllen, Klaus; Pisula, Wojciech

    2016-04-01

    In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics.In recent years organic field-effect transistors have received extensive attention, however, it is still a great challenge to fabricate monolayer-based devices of conjugated polymers. In this study, one single layer of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) is directly dip-coated, and its self-assembly is precisely tuned from nanofibers to granular aggregates by controlling the dielectric roughness on a sub-nanometer scale. The charge carrier transport of the monolayer transistor exhibits a strong dependence on the dielectric roughness, which is attributed to the roughness-induced effects of higher densities of grain boundaries and charge trapping sites as well as surface scattering. These results mark a great advance in the bottom-up fabrication of organic electronics. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01082b

  18. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    SciTech Connect

    Teyssedre, G. Laurent, C.; Vu, T. T. N.

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  19. Two-dimensional Mineral [Pb2BiS3 ][AuTe2 ]: High mobility Charge Carriers in Single-atom-thick Layers

    NASA Astrophysics Data System (ADS)

    Fang, Lei; Im, J.; Stoumpos, C.; Shi, F.; Dravid, V.; Leroux, M.; Freeman, A.; Kwok, W.-K.,; Chung, D.-Y.; Kanatzidis, M.

    2015-03-01

    We report that [Pb2BiS3][AuTe2], known as a naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements and theoretical calculations show a property of multiband semimetal with compensated density of electrons and holes, which exhibit high hole carrier mobility of 1360 cm2/Vs. This material possesses an extremely large anisotropy 104, comparable to benchmark materials graphite. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s which are virtually identical to that of graphene. The weak interlayer coupling gives rise to the highly cleavable property of single crystal specimens, indicating a prospect for monolayer system. This research was supported by the DoE, BES, under Contract No. DE-AC02-06CH11357, and NUANCE Center at the Northwestern Univeristy.

  20. Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in α,ω-Dihexylsexithiophene Field-Effect Transistors.

    PubMed

    Li, Mengmeng; Marszalek, Tomasz; Müllen, Klaus; Pisula, Wojciech

    2016-06-29

    The effect of dielectric roughness on the microstructure evolution of thermally evaporated α,ω-dihexylsexithiophene (α,ω-DH6T) thin films from a single molecular layer to tens of monolayers (ML) is studied. Thereby, the surface roughness of dielectrics is controlled within a sub-nanometer range. It is found that the grain size of an α,ω-DH6T ML is affected by dielectric roughness, especially for 1.5 ML, whereby the transistor performance is barely influenced. This can be attributed to a domain interconnection in the second layer over a long-range formed on the rough surface. With deposition of more layers, both microstructure and charge carrier transport exhibit a roughness-independent behavior. The structural characterization of α,ω-DH6T 10 ML by grazing-incidence wide-angle X-ray scattering reveals that the interlayer distance is slightly decreased from 3.30 to 3.15 nm due to a higher roughness, while an unchanged π-stacking distance is in excellent agreement with the roughness-independent hole mobility. This study excludes the influence of molecular-solvent interaction and preaggregation taking place during solution deposition, and provides further evidence that the microstructure of the interfacial layer of organic semiconductors has only minor impact on the bulk charge carrier transport in thicker films. PMID:27280702

  1. Long-Lived Hot Carriers in III-V Nanowires.

    PubMed

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs. PMID:27104870

  2. Nonequilibrium dynamics of charged particles in a quantized electromagnetic field: causal, stable and self-consistent dynamics from 1/c expansion

    NASA Astrophysics Data System (ADS)

    Fleming, C. H.; Johnson, P. R.; Hu, B. L.

    2012-06-01

    We derive a set of stochastic equations of motion for a system of ordinary quantum-mechanical, spinless charged particles in a second-quantized electromagnetic field based on a consistent application of a dimensionful 1/c expansion, which is analogous to the post-Newtonian expansion in gravity. All relativistic corrections up to order 1/c3 are found, including electrostatic interactions (Coulomb), magnetostatic backreaction (Biot-Savart), dissipative backreaction (Abraham-Lorentz) and quantum-field fluctuations at zero and finite temperatures. With self-consistent backreaction of the EM field included, we show that this approach yields causal and runaway-free equations of motion, provides new insights into charged-particle backreaction and naturally leads to equations consistent with the (classical) Darwin Hamiltonian, and has quantum operator ordering consistent with the Breit Hamiltonian. To order 1/c3 the approach leads to a nonstandard mass renormalization which is associated with magnetostatic self-interactions, and no cutoff is required to prevent runaways. Our results also show that the pathologies of the standard Abraham-Lorentz equations can be seen as a consequence of applying an inconsistent (i.e. incomplete, mixed-order) expansion in 1/c, if, from the start, the analysis is viewed as generating an effective theory with all relativistic corrections considered perturbatively. Finally, we show that the 1/c expansion within a Hamiltonian framework yields well-behaved noise and dissipation, in addition to the multiple-particle interactions.

  3. Simultaneous and direct measurement of carrier diffusion constant and mobility in organic semiconductors and deviation from standard Einstein relation

    NASA Astrophysics Data System (ADS)

    Tripathi, Awnish K.; Tripathi, Durgesh C.; Mohapatra, Y. N.

    2011-07-01

    We show that the shape of electroluminescence transients in organic semiconductors can be conveniently used to obtain the diffusion constant D of injected charge carriers, enabling the study of generalized Einstein relationship under nonequilibrium conditions as a function of the electric field. The appearance of peak at the onset of transient is shown to be the signature of diffusive regime of transport. We demonstrate it for two representative materials, Alq3 and polymer poly [2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene], with the focus on the role of hot carriers in transport and their diffusivity.

  4. Nonequilibrium molecular dynamics

    SciTech Connect

    Hoover, W.G. . Dept. of Applied Science Lawrence Livermore National Lab., CA )

    1990-11-01

    The development of nonequilibrium molecular dynamics is described, with emphasis on massively-parallel simulations involving the motion of millions, soon to be billions, of atoms. Corresponding continuum simulations are also discussed. 14 refs., 8 figs.

  5. Improved understanding of the electronic and energetic landscapes of perovskite solar cells: high local charge carrier mobility, reduced recombination, and extremely shallow traps.

    PubMed

    Oga, Hikaru; Saeki, Akinori; Ogomi, Yuhei; Hayase, Shuzi; Seki, Shu

    2014-10-01

    The intriguing photoactive features of organic-inorganic hybrid perovskites have enabled the preparation of a new class of highly efficient solar cells. However, the fundamental properties, upon which the performance of these devices is based, are currently under-explored, making their elucidation a vital issue. Herein, we have investigated the local mobility, recombination, and energetic landscape of charge carriers in a prototype CH3NH3PbI3 perovskite (PVK) using a laser-flash time-resolved microwave conductivity (TRMC) technique. PVK was prepared on mesoporous TiO2 and Al2O3 by one or two-step sequential deposition. PVK on mesoporous TiO2 exhibited a charge carrier mobility of 20 cm(2) V(-1) s(-1), which was predominantly attributed to holes. PVK on mesoporous Al2O3, on the other hand, exhibited a 50% lower mobility, which was resolved into balanced contributions from both holes and electrons. A general correlation between crystal size and mobility was revealed irrespective of the fabrication process and underlying layer. Modulating the microwave frequency from 9 toward 23 GHz allowed us to determine the intrinsic mobilities of each PVK sample (60-75 cm(2) V(-1) s(-1)), which were mostly independent of the mesoporous scaffold. Kinetic and frequency analysis of the transient complex conductivity strongly support the superiority of the perovskite, based on a significant suppression of charge recombination, an extremely shallow trap depth (10 meV), and a low concentration of these trapped states (less than 10%). The transport mechanism was further investigated by examining the temperature dependence of the TRMC maxima. Our study provides a basis for understanding perovskite solar cell operation, while highlighting the importance of the mesoporous layer and the perovskite fabrication process. PMID:25188538

  6. Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Chen, Shang-Jr; Chung, Steve Shao-Shiun; Lin, Horng-Chih

    2002-07-01

    Plasma etching of poly-silicon in a metal-oxide-semiconductor field-effect transistor (MOSFET) during the gate definition process induces edge damage at the gate-drain overlap edge. This edge damage will be further enhanced by the antenna effect and cause a more serious hot-carrier (HC) effect, particularly in short-channel devices. We call this phenomenon the plasma-charging-enhanced HC effect. In this paper, this plasma-charging-enhanced HC effect is evaluated by the charge pumping (CP) profiling technique, in which the enhanced damage at the gate-drain overlap gate oxide region can be identified. A three-phase plasma damage mechanism is then proposed to explain the observed effect. According to experimental results, it was shown that the interface traps generated at the gate-drain overlap edge are mainly attributed to the plasma-charging-enhanced HC effect. These interface traps (Nit) become the dominant mechanism of the drain current (ID) degradation, which increases with a reducing channel length (L). Again, the enhanced HC-effect-induced-degradation will dominate the device reliability under long-term operations.

  7. Unambiguous Diagnosis of Photoinduced Charge Carrier Signatures in a Stoichiometrically Controlled Semiconducting Polymer-Wrapped Carbon Nanotube Assembly.

    PubMed

    Olivier, Jean-Hubert; Park, Jaehong; Deria, Pravas; Rawson, Jeff; Bai, Yusong; Kumbhar, Amar S; Therien, Michael J

    2015-07-01

    Single-walled carbon nanotube (SWNT)-based nanohybrid compositions based on (6,5) chirality-enriched SWNTs ([(6,5) SWNTs]) and a chiral n-type polymer (S-PBN(b)-Ph4 PDI) that exploits a perylenediimide (PDI)-containing repeat unit are reported; S-PBN(b)-Ph4 PDI-[(6,5) SWNT] superstructures feature a PDI electron acceptor unit positioned at 3 nm intervals along the nanotube surface, thus controlling rigorously SWNT-electron acceptor stoichiometry and organization. Potentiometric studies and redox-titration experiments determine driving forces for photoinduced charge separation (CS) and thermal charge recombination (CR) reactions, as well as spectroscopic signatures of SWNT hole polaron and PDI radical anion (PDI(-.) ) states. Time-resolved pump-probe spectroscopic studies demonstrate that S-PBN(b)-Ph4 PDI-[(6,5) SWNT] electronic excitation generates PDI(-.) via a photoinduced CS reaction (τCS ≈0.4 ps, ΦCS ≈0.97). These experiments highlight the concomitant rise and decay of transient absorption spectroscopic signatures characteristic of the SWNT hole polaron and PDI(-.) states. Multiwavelength global analysis of these data provide two charge-recombination time constants (τCR ≈31.8 and 250 ps) that likely reflect CR dynamics involving both an intimately associated SWNT hole polaron and PDI(-.) charge-separated state, and a related charge-separated state involving PDI(-.) and a hole polaron site produced via hole migration along the SWNT backbone that occurs over this timescale. PMID:26014277

  8. Coupled optical absorption, charge carrier separation, and surface electrochemistry in surface disordered/hydrogenated TiO2 for enhanced PEC water splitting reaction.

    PubMed

    Behara, Dilip Kumar; Ummireddi, Ashok Kumar; Aragonda, Vidyasagar; Gupta, Prashant Kumar; Pala, Raj Ganesh S; Sivakumar, Sri

    2016-03-28

    The central governing factors that influence the efficiency of photoelectrochemical (PEC) water splitting reaction are photon absorption, effective charge-carrier separation, and surface electrochemistry. Attempts to improve one of the three factors may debilitate other factors and we explore such issues in hydrogenated TiO2, wherein a significant increase in optical absorption has not resulted in a significant increase in PEC performance, which we attribute to the enhanced recombination rate due to the formation of amorphization/disorderness in the bulk during the hydrogenation process. To this end, we report a methodology to increase the charge-carrier separation with enhanced optical absorption of hydrogenated TiO2. Current methodology involves hydrogenation of non-metal (N and S) doped TiO2 which comprises (1) lowering of the band gap through shifting of the valence band via less electronegative non-metal N, S-doping, (2) lowering of the conduction band level and the band gap via formation of the Ti(3+) state and oxygen vacancies by hydrogenation, and (3) material processing to obtain a disordered surface structure which favors higher electrocatalytic (EC) activity. This design strategy yields enhanced PEC activity (%ABPE = 0.38) for the N-S co-doped TiO2 sample hydrogenated at 800 °C for 24 h over possible combinations of N-S co-doped TiO2 samples hydrogenated at 500 °C/24 h, 650 °C/24 h and 800 °C/72 h. This suggests that hydrogenation at lower temperatures does not result in much increase in optical absorption and prolonged hydrogenation results in an increase in optical absorption but a decrease in charge carrier separation by forming disorderness/oxygen vacancies in the bulk. Furthermore, the difference in double layer capacitance (C(dl)) calculated from electrochemical impedance spectroscopy (EIS) measurements of these samples reflects the change in the electrochemical surface area (ECSA) and facilitates assessing the key role of surface

  9. Assessment of Hot-Carrier Effects on Charge Separation in Type-II CdS/CdTe Heterostructured Nanorods.

    PubMed

    Okano, Makoto; Sakamoto, Masanori; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2014-09-01

    Charge separation in semiconducting materials is an essential process that determines the efficiency of photovoltaic devices and photocatalysts. Herein, we report the charge-separation dynamics in type-II CdS/CdTe heterostructured nanorods revealed by femtosecond transient-absorption (TA) measurements with a broad-band white-light probe. Under selective excitation of the CdTe segment, bleaching signals at the band gap energy of CdS were clearly observed with a rise component on a subpicosecond time scale, which indicates efficient electron transfer from CdTe to CdS. The pump-energy dependence of the TA dynamics shows that hot electrons rapidly relax to the bottom of the conduction band of CdTe, and then the electrons transfer to the CdS segment. PMID:26278242

  10. Primary charge carrier dynamics of water-solubilized CdZnS/ZnS core/shell and CdZnS/ZnS·Pd nanoparticle adducts

    NASA Astrophysics Data System (ADS)

    Busby, Erik; Thibert, Arthur; Page, Leah E.; Jawaid, Ali M.; Snee, Preston T.; Larsen, Delmar S.

    2013-06-01

    The primary photodynamics of 5-nm CdZnS core, CdZnS/ZnS core/shell, and CdZnS/ZnS·Pd nanoparticle adducts are characterized with broadband ultrafast transient absorption spectroscopy. Photogenerated excitons in the CdZnS and CdZnS/ZnS nanoparticles exhibit long-lived (>20 ns) lifetimes and further functionalizing of the type-I CdZnS/ZnS core/shells with Pd nanoparticles resulted in rapid exciton quenching (<250 ps) due to the transfer of electrons from the CdZnS core into the Pd nanocrystals via tunneling through the insulating ZnS shell. The shell-induced surface trap passivation and near-unity charge carrier injection efficiency into a platinum-group metal nanoparticle shows potential for enhanced colloidal photocatalytic applications, while enhancing photostability.

  11. Charge carrier generation potential of graphene/Si-TiO2 based solar cell device in UV-Vis wavelength range spectra

    NASA Astrophysics Data System (ADS)

    Rosikhin, Ahmad; Syuhada, Ibnu; Hidayat, Aulia Fikri; Winata, Toto

    2016-02-01

    Charges carrier generation potential of graphene/Si solar cell performing TiO2 layer has been elucidated via simple analytical mathematical calculation. Optical electric field both as wavelength function and position of any points at light propagation direction performed by transfer matrix method while dissipated energy profile has observed using electromagnetic theory. Furthermore potential of excitons generation has explored by dividing dissipated energy by photon of wavelength λ then integrating to overall UV-Vis spectra. By this calculation it was revealed that silicon semiconductor material is responsive enough in visible region while by adding TiO2 layer the excitons production is significantly increased until more than 1024/s. Such metal oxide layer is entrusted able to enhance photons absorption in short wavelength spectra. Therefore the role of this metal oxide material should increase the performance in wider wavelength area.

  12. Charge-conversional poly(amino acid)s derivatives as a drug delivery carrier in response to the tumor environment.

    PubMed

    Yoon, Se Rim; Yang, Hee-Man; Park, Chan Woo; Lim, Sujin; Chung, Bong Hyun; Kim, Jong-Duk

    2012-08-01

    A charge-converting and pH-dependent nanocarrier was achieved by conjugating 2,3-dimethylmaleic anhydride (DMMA) to the amino group of an octadecyl grafted poly (2-hydroxyethyl aspartamide) (PHEA-g-C(18)-NH(2)) backbone, thereby forming a spherical micelle. PHEA, a poly(amino acid)s derivative, was derived from poly(succinimide), which is biocompatible and biodegradable. DMMA, a detachable component at the tumor site, was added, preventing aggregation with negative blood serum and enhancing the nanocarrier's cellular uptake. The polymeric micelle was comprehensively characterized and doxorubicin was encapsulated successively. The cellular uptake and anticancer therapeutic effect were evaluated by flow cytometry, confocal laser scanning microscopy, and a MTT assay. The properties of the nanocarrier can further be exploited to develop an early detection module for cancer. The present work is also expected to advance the study of designing smart carriers for drug and gene delivery. PMID:22581644

  13. Effect of Structural Phase Transition on Charge-Carrier Lifetimes and Defects in CH3NH3SnI3 Perovskite.

    PubMed

    Parrott, Elizabeth S; Milot, Rebecca L; Stergiopoulos, Thomas; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

    2016-04-01

    Methylammonium tin triiodide (MASnI3) has been successfully employed in lead-free perovskite solar cells, but overall power-conversion efficiencies are still significantly lower than for lead-based perovskites. Here we present photoluminescence (PL) spectra and time-resolved PL from 8 to 295 K and find a marked improvement in carrier lifetime and a substantial reduction in PL line width below ∼110 K, indicating that the cause of the hindered performance is activated at the orthorhombic to tetragonal phase transition. Our measurements therefore suggest that targeted structural change may be capable of tailoring the relative energy level alignment of defects (e.g., tin vacancies) to reduce the background dopant density and improve charge extraction. In addition, we observe for the first time an above-gap emission feature that may arise from higher-lying interband transitions, raising the prospect of excess energy harvesting. PMID:26990282

  14. Well-Steered Charge-Carrier Transfer in 3D Branched CuxO/ZnO@Au Heterostructures for Efficient Photocatalytic Hydrogen Evolution.

    PubMed

    Zhou, Gang; Xu, Xiaoyong; Ding, Tao; Feng, Bing; Bao, Zhijia; Hu, Jingguo

    2015-12-01

    Multi-component hetero-nanostructures exhibit multifunctional properties or synergistic performance and are thus considered as attractive materials for energy conversion applications. There is a long-standing demand to construct more sophisticated heterostructures for steering charge-carrier flow in semiconductor systems. Herein we fabricate a large-scale quantity of three-dimensional (3D) branched CuxO/ZnO@Au heterostructure consisting of CuO nanowires (NWs) and grafted ZnO nanodisks (NDs) decorated with Au nanoparticles via sequential hierarchical assemblies. This treelike hetero-nanostructure ensures well-steered transfer of photogenerated electrons to the exposed ZnO NDs, while holes to the CuO backbone NWs with concerted efforts from multi-node p-n junctions, polar ZnO facets, and Au plasmon, resulting in the significantly enhanced photocatalytic hydrogen evolution performance. PMID:26563634

  15. Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers.

    PubMed

    Fang, Lei; Im, Jino; Stoumpos, Constantinos C; Shi, Fengyuan; Dravid, Vinayak; Leroux, Maxime; Freeman, Arthur J; Kwok, Wai-Kwong; Chung, Duck Young; Kanatzidis, Mercouri

    2015-02-18

    Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm(2)/(V s). This material possesses an extremely large anisotropy, Γ = ρ(c)/ρ(ab) ≈ 10(4), comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O(6+δ). The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 10(6) m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties. PMID:25612093

  16. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Polster, S.; Jank, M. P. M.; Frey, L.

    2016-01-01

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  17. Charge carrier dynamics and relaxation in (polyethylene oxide-lithium-salt)-based polymer electrolyte containing 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide as ionic liquid.

    PubMed

    Karmakar, A; Ghosh, A

    2011-11-01

    In this paper we report the dynamics of charge carriers and relaxation in polymer electrolytes based on polyethylene oxide (PEO), lithium bis(trifluoromethylsulfonyl)imide (LiTFSI) and 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (BMPTFSI) ionic liquid prepared by solution cast technique. It has been observed that the incorporation of BMPTFSI into PEO-LiTFSI electrolyte is an effective way for increasing the amorphous phase to a large extent. It has also been observed that both the glass transition and melting temperatures decrease with the increase of BMPTFSI concentration. The ionic conductivity of these polymer electrolytes increases with the increase of BMPTFSI concentration. The highest ionic conductivity obtained at 25 °C is ~3×10(-4) S cm(-1) for the electrolyte containing 60 wt % BMPTFSI and ethylene oxide (EO)/Li ratio of 20. The temperature dependence of the dc conductivity and the hopping frequency show Vogel-Tamman-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The frequency dependence of the ac conductivity exhibits a power law with an exponent n which decreases with the increase of temperature. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and BMPTFSI concentrations. We have also presented the electric modulus data which have been analyzed in the framework of a Havriliak-Negami equation and the shape parameters obtained by the analysis show slight temperature dependence, but change sharply with BMPTFSI concentration. The stretched exponent β obtained from Kohlrausch-Williams-Watts fit to the modulus data is much lower than unity signifying that the relaxation is highly nonexponential. The decay function obtained from analysis of experimental modulus data is highly asymmetric with time. PMID:22181434

  18. Nonequilibrium viscosity of glass

    NASA Astrophysics Data System (ADS)

    Mauro, John C.; Allan, Douglas C.; Potuzak, Marcel

    2009-09-01

    Since glass is a nonequilibrium material, its properties depend on both composition and thermal history. While most prior studies have focused on equilibrium liquid viscosity, an accurate description of nonequilibrium viscosity is essential for understanding the low temperature dynamics of glass. Departure from equilibrium occurs as a glass-forming system is cooled through the glass transition range. The glass transition involves a continuous breakdown of ergodicity as the system gradually becomes trapped in a subset of the available configurational phase space. At very low temperatures a glass is perfectly nonergodic (or “isostructural”), and the viscosity is described well by an Arrhenius form. However, the behavior of viscosity during the glass transition range itself is not yet understood. In this paper, we address the problem of glass viscosity using the enthalpy landscape model of Mauro and Loucks [Phys. Rev. B 76, 174202 (2007)] for selenium, an elemental glass former. To study a wide range of thermal histories, we compute nonequilibrium viscosity with cooling rates from 10-12 to 1012K/s . Based on these detailed landscape calculations, we propose a simplified phenomenological model capturing the essential physics of glass viscosity. The phenomenological model incorporates an ergodicity parameter that accounts for the continuous breakdown of ergodicity at the glass transition. We show a direct relationship between the nonequilibrium viscosity parameters and the fragility of the supercooled liquid. The nonequilibrium viscosity model is validated against experimental measurements of Corning EAGLE XG™ glass. The measurements are performed using a specially designed beam-bending apparatus capable of accurate nonequilibrium viscosity measurements up to 1016Pas . Using a common set of parameters, the phenomenological model provides an accurate description of EAGLE XG™ viscosity over the full range of measured temperatures and fictive temperatures.

  19. Charge carrier mobility in conjugated organic polymers: simulation of an electron mobility in a carbazole-benzothiadiazole-based polymer

    NASA Astrophysics Data System (ADS)

    Li, Yaping; Lagowski, Jolanta B.

    2011-08-01

    Inorganic (mostly silicon based) solar cells are important devices that are used to solve the world energy and environmental needs. Now days, organic solar cells are attracting considerable attention in the field of photovoltaic cells because of their low cost and processing flexibility. Often conjugated polymers are used in the construction of the organic solar cells. We study the conjugated polymers' charge transport using computational approach that involves the use of the density functional theory (DFT), semiempirical (ZINDO), and Monte Carlo (MC) theoretical methods in order to determine their transfer integrals, reorganization energies, transfer rates (with the use of Marcus-Hush equation) and mobilities. We employ the experimentally determined three dimensional (3D) structure of poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) to estimate the electron mobility in a similar co-alternating polymer consisting of carbazole and benzothiadiazole units (C8BT). In agreement with our previous work, we found that including an orientational disorder in the crystal reduces the electron mobility in C8BT. We hope that the proposed computational approach can be used to predict charge mobility in organic materials that are used in solar cells.

  20. Time Evolution of Charge Carriers & Phonons after Photo-Excitation by an Ultra-Short Light Pulse in Bulk Germanium

    NASA Astrophysics Data System (ADS)

    Fahy, Stephen; Murphy-Armando, Felipe; Trigo, Mariano; Savic, Ivana; Murray, Eamonn; Reis, David

    We have calculated the time-evolution of carriers and generated phonons in Ge after ultrafast photo-excitation above the direct band-gap. The relevant electron-phonon and anharmonic phonon scattering rates are obtained from first-principles electronic structure calculations. Measurements of the x-ray diffuse scattering after excitation near the L point in the Brillouin zone find a relatively slow (5 ps, compared to the typical electron-phonon energy relaxation of the Gamma-L phonon) increase of the phonon population. We find this is due to emission caused by the scattering of electrons between the Delta and L valleys, after the initial depopulation of the Gamma valley. The relative slowness of this process is due to a combination of causes: (i) the finite time for the initial depopulation of the conduction Gamma valley; (ii) the associated electron-phonon coupling is relatively weaker (compared to Gamma-L, Gamma-Delta and Delta-Delta couplings) ; (iii) the TA associated phonon has a long lifetime and (iv) the depopulation of the Delta valley suppresses the phonon emission. Supported by Science Foundation Ireland, Grant 12/1A/1601.

  1. Common Carrier Services.

    ERIC Educational Resources Information Center

    Federal Communications Commission, Washington, DC.

    After outlining the Federal Communications Commission's (FCC) responsibility for regulating interstate common carrier communication (non-broadcast communication whose carriers are required by law to furnish service at reasonable charges upon request), this information bulletin reviews the history, technological development, and current…

  2. Mechanism of Charge Transfer and Recombination Dynamics in Organo Metal Halide Perovskites and Organic Electrodes, PCBM, and Spiro-OMeTAD: Role of Dark Carriers.

    PubMed

    Ponseca, Carlito S; Hutter, Eline M; Piatkowski, Piotr; Cohen, Boiko; Pascher, Torbjörn; Douhal, Abderrazzak; Yartsev, Arkady; Sundström, Villy; Savenije, Tom J

    2015-12-30

    Despite the unprecedented interest in organic-inorganic metal halide perovskite solar cells, quantitative information on the charge transfer dynamics into selective electrodes is still lacking. In this paper, we report the time scales and mechanisms of electron and hole injection and recombination dynamics at organic PCBM and Spiro-OMeTAD electrode interfaces. On the one hand, hole transfer is complete on the subpicosecond time scale in MAPbI3/Spiro-OMeTAD, and its recombination rate is similar to that in neat MAPbI3. This was found to be due to a high concentration of dark charges, i.e., holes brought about by unintentional p-type doping of MAPbI3. Hence, the total concentration of holes in the perovskite is hardly affected by optical excitation, which manifested as similar decay kinetics. On the other hand, the decay of the photoinduced conductivity in MAPbI3/PCBM is on the time scale of hundreds of picoseconds to several nanoseconds, due to electron injection into PCBM and electron-hole recombination at the interface occurring at similar rates. These results highlight the importance of understanding the role of dark carriers in deconvoluting the complex photophysical processes in these materials. Moreover, optimizing the preparation processes wherein undesired doping is minimized could prompt the use of organic molecules as a more viable electrode substitute for perovskite solar cell devices. PMID:26636183

  3. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    SciTech Connect

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L.; Arscott, S.

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  4. Efficient Carrier Separation and Intriguing Switching of Bound Charges in Inorganic-Organic Lead Halide Solar Cells.

    PubMed

    Kim, Gee Yeong; Oh, Seol Hee; Nguyen, Bich Phuong; Jo, William; Kim, Byeong Jo; Lee, Dong Geon; Jung, Hyun Suk

    2015-06-18

    We fabricated a mesoporous perovskite solar cell with a ∼14% conversion efficiency, and we investigated its beneficial grain boundary properties of the perovskite solar cells through the use of scanning probe microscopy. The CH3NH3Pb(I0.88,Br0.12)3 showed a significant potential barrier bending at the grain boundary and induced passivation. The potential difference value in the x = 0.00 sample is ∼50 mV, and the distribution of the positive potential is lower than that of the x = 0.12 sample. We also investigated the polarization and hysteretic properties of the perovskite thin films by measuring the local piezoresponse. Specifically, the charged grain boundaries play a beneficial role in electron-hole depairing and in suppressing recombination in order to realize high-efficiency perovskite solar cells. PMID:26266617

  5. Nonequilibrium thermal entanglement

    SciTech Connect

    Quiroga, Luis; Rodriguez, Ferney J.; Ramirez, Maria E.; Paris, Roberto

    2007-03-15

    Results on heat current, entropy production rate, and entanglement are reported for a quantum system coupled to two different temperature heat reservoirs. By applying a temperature gradient, different quantum states can be found with exactly the same amount of entanglement but different purity degrees and heat currents. Furthermore, a nonequilibrium enhancement-suppression transition behavior of the entanglement is identified.

  6. Nonequilibrium Tuning of the Thermal Casimir Effect

    NASA Astrophysics Data System (ADS)

    Dean, David S.; Lu, Bing-Sui; Maggs, A. C.; Podgornik, Rudolf

    2016-06-01

    In net-neutral systems correlations between charge fluctuations generate strong attractive thermal Casimir forces and engineering these forces to optimize nanodevice performance is an important challenge. We show how the normal and lateral thermal Casimir forces between two plates containing Brownian charges can be modulated by decorrelating the system through the application of an electric field, which generates a nonequilibrium steady state with a constant current in one or both plates, reducing the ensuing fluctuation-generated normal force while at the same time generating a lateral drag force. This hypothesis is confirmed by detailed numerical simulations as well as an analytical approach based on stochastic density functional theory.

  7. Nonequilibrium Tuning of the Thermal Casimir Effect.

    PubMed

    Dean, David S; Lu, Bing-Sui; Maggs, A C; Podgornik, Rudolf

    2016-06-17

    In net-neutral systems correlations between charge fluctuations generate strong attractive thermal Casimir forces and engineering these forces to optimize nanodevice performance is an important challenge. We show how the normal and lateral thermal Casimir forces between two plates containing Brownian charges can be modulated by decorrelating the system through the application of an electric field, which generates a nonequilibrium steady state with a constant current in one or both plates, reducing the ensuing fluctuation-generated normal force while at the same time generating a lateral drag force. This hypothesis is confirmed by detailed numerical simulations as well as an analytical approach based on stochastic density functional theory. PMID:27367374

  8. A novel research approach on the dynamic properties of photogenerated charge carriers at Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films by a frequency-modulated surface photovoltage technology

    SciTech Connect

    Zhang, Yu; Zhang, Wei; Xie, Tengfeng; Wang, Dejun; Song, Xi-Ming

    2013-09-01

    Graphical abstract: The changed SPV with chopping frequencies indicate the separation speeds of photogenerated charge carriers in different films. - Highlights: • Ag{sub 2}S-sensitized TiO{sub 2} films show good photoelectric responses in visible-light region. • Frequency-modulated SPV give dynamic information and evidence of Ag{sub 2}S QDSSCs’ performance. • Frequency-modulated SPV can supply complementary information in the study of Ag{sub 2}S ODSSCs. - Abstract: Ag{sub 2}S quantum-dots-sensitized TiO{sub 2} films with different amount of Ag{sub 2}S were fabricated by a successive ionic layer adsorption and reaction (SILAR) method. The separation and transport of photogenerated charge carriers at different spectral regions were studied by the frequency-modulated surface photovoltage technology. Some novel dynamic information of photogenerated charge carriers in a wide spectral range is found. The results indicate that the rate and direction of separation (diffusion) for photogenerated charge carriers are closely related to the performance of quantum-dots-sensitized solar cells (QDSSCs) based on the Ag{sub 2}S/TiO{sub 2} nano-structure.

  9. Electrical transport in a disordered medium: NMR measurement of diffusivity and electrical mobility of ionic charge carriers.

    PubMed

    Heil, S R; Holz, M

    1998-11-01

    Electrical transport in porous media plays an important role in many fields of pure and applied science. The basic microscopic processes of the charge transport have attracted considerable theoretical interest for a long time. However, on a microscopic level there was up to now no experimental access to this problem. In the present paper we demonstrate, by using a suited porous system, that two combined NMR methods can offer such a first experimental access. We apply common PFG NMR methods and the special electrophoretic NMR (ENMR) technique for the measurement of self-diffusion coefficient D+ and electric mobility u+ of a cation ((C4H9)+4) in a disordered gel-like medium (Sephadex LH-20) filled with electrolyte solution. We find a, qualitatively expected, observation time-dependence of D+, but for the first time such a time-dependence is also observed for u+, which means the detection of the phenomenon of "anomalous field assisted diffusion" or "anomalous mobility." For the measurement of the short-time behavior of the mobility a new pulse sequence is presented. The time-dependent mobilities were measured at three different external electrical fields E. From the long-time behavior of D+, u+, and DH2O three independent values for the tortuosity T of the porous system could be derived. We find equality of the tortuosities T(D+) and T(u+), which represents a first experimental proof of the validity of the Einstein relation (D+ approximately u+) in a disordered medium. Finally, we discuss advantages of the possible use of "anomalous field assisted diffusion" over the commonly used "anomalous diffusion" in morphology studies by dynamic imaging in porous media. PMID:9799669

  10. Rate of tunneling nonequilibrium quasiparticles in superconducting qubits

    NASA Astrophysics Data System (ADS)

    Ansari, Mohammad H.

    2015-04-01

    In superconducting qubits the lifetime of quantum states cannot be prolonged arbitrarily by decreasing temperature. At low temperature quasiparticles tunneling between the electromagnetic environment and superconducting islands takes the condensate state out of equilibrium due to charge imbalance. We obtain the tunneling rate from a phenomenological model of non-equilibrium, where nonequilibrium quasiparticle tunnelling stimulates a temperature-dependent chemical potential shift in the superconductor. As a result we obtain a non-monotonic behavior for relaxation rate as a function of temperature. Depending on the fabrication parameters for some qubits, the lowest tunneling rate of nonequilibrium quasiparticles can take place only near the onset temperature below which nonequilibrium quasiparticles dominate over equilibrium one. Our theory also indicates that such tunnelings can influence the probability of transitions in qubits through a coupling to the zero-point energy of phase fluctuations.

  11. Nonequilibrium surface tension

    NASA Astrophysics Data System (ADS)

    Lamorgese, A.; Mauri, R.

    2015-12-01

    A weakly nonlocal phase-field model is used to define surface tension in liquid binary mixtures in terms of the composition gradient in the interfacial region so that, at equilibrium, it depends linearly on the characteristic length that defines the interfacial width. In nonequilibrium conditions, surface tension changes with time: during mixing, it decreases as the inverse square root of time, while during phase separation, when nuclei coagulate, it increases exponentially to its equilibrium value. In addition, since temperature gradients modify the steepness of the concentration profile in the interfacial region, they induce gradients in the nonequilibrium surface tension, leading to the Marangoni thermocapillary migration of an isolated drop. Similarly, Marangoni stresses are induced in a composition gradient, leading to diffusiophoresis.

  12. Ferroelectric polarization driven optical absorption and charge carrier transport in CH3NH3PbI3/TiO2-based photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Feng, Hong-Jian

    2015-09-01

    Time-dependent density-functional theory(TD-DFT) calculations show that photogenerated electrons accumulate at the interface of CH3NH3PbI3/TiO2. Electrons transport from CH3NH3PbI3 side to TiO2 side, and the recombination of charge carriers is significantly reduced in this heterostructure. This can unambiguously explain why the power conversion efficiency and the open-circuit voltage are so high in the mesoporous TiO2 with an ultrathin layer of the hybrid halide perovskites. The calculated absorption spectrum of CH3NH3PbI3 agrees well with the experimental measurements. Our TD-DFT calculations confirm the connection between the ferroelectric polarization and the optical absorption. The polarization is caused by the combination of stereochemical activity of the lone pair of Pb-6s2 and the distortions of the organic moieties. Ti-3d states play crucial role in the formation of electron-hole pairs and make TiO2 as an electron transport material.

  13. Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3-Sb2Te3 Crystal

    NASA Astrophysics Data System (ADS)

    Stepanov, N. P.; Nalivkin, V. Yu.

    2016-05-01

    A technique is presented, by which the magnetic susceptibility χ | G of the ion core of an anisotropic semiconductor Bi2Te3-Sb2Te3 crystal is determined from experimental data on the magnetic susceptibility χ ∥ and χ ⊥ obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C3 axis of the crystal in accordance with the expression χ ∥/ χ ⊥ = ( χ ∥ eh + χ G )/( χ ⊥ eh + χ G ).In this expression, the value of the magnetic susceptibility of free charge carriers χ ∥ eh and χ ⊥ eh depending on their effective masses m ∥ * and m ⊥ * known from the experiment is calculated within the framework of the Pauli and Landau- Peierls approaches. The found value of χ | G for Bi2Te3-Sb2Te3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.

  14. Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3-Sb2Te3 Crystal

    NASA Astrophysics Data System (ADS)

    Stepanov, N. P.; Nalivkin, V. Yu.

    2016-05-01

    A technique is presented, by which the magnetic susceptibility χ {|/ G } of the ion core of an anisotropic semiconductor Bi2Te3-Sb2Te3 crystal is determined from experimental data on the magnetic susceptibility χ ∥ and χ ⊥ obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C3 axis of the crystal in accordance with the expression χ ∥/χ ⊥ = (χ {∥/ eh } + χ G )/(χ {⊥/ eh } + χ G ).In this expression, the value of the magnetic susceptibility of free charge carriers χ {∥/ eh } and χ {⊥/ eh } depending on their effective masses m {∥/*} and m {⊥/*} known from the experiment is calculated within the framework of the Pauli and Landau- Peierls approaches. The found value of χ {|/ G }for Bi2Te3-Sb2Te3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.

  15. Design of suitable carrier buffer for free-flow zone electrophoresis by charge-to-mass ratio and band broadening analysis.

    PubMed

    Kong, Fan-Zhi; Yang, Ying; He, Yu-Chen; Zhang, Qiang; Li, Guo-Qing; Fan, Liu-Yin; Xiao, Hua; Li, Shan; Cao, Cheng-Xi

    2016-09-01

    In this work, charge-to-mass ratio (C/M) and band broadening analyses were combined to provide better guidance for the design of free-flow zone electrophoresis carrier buffer (CB). First, the C/M analyses of hemoglobin and C-phycocyanin (C-PC) under different pH were performed by CLC Protein Workbench software. Second, band dispersion due to the initial bandwidth, diffusion, and hydrodynamic broadening were discussed, respectively. Based on the analyses of the C/M and band broadening, a better guidance for preparation of free-flow zone electrophoresis CB was obtained. Series of experiments were performed to validate the proposed method. The experimental data showed high accordance with our prediction allowing the CB to be prepared easily with our proposed method. To further evaluate this method, C-PC was purified from crude extracts of Spirulina platensis with the selected separation condition. Results showed that C-PC was well separated from other phycobiliproteins that have similar physicochemical properties, and analytical grade product with purity up to 4.5 (A620/A280) was obtained. PMID:27465345

  16. Giant THz photoconductivity and possible non-equilibrium superconductivity in metallic K3C60

    PubMed Central

    Mitrano, M.; Cantaluppi, A.; Nicoletti, D.; Kaiser, S.; Perucchi, A.; Lupi, S.; Di Pietro, P.; Pontiroli, D.; Riccò, M.; Clark, S. R.; Jaksch, D.; Cavalleri, A.

    2015-01-01

    The non-equilibrium control of emergent phenomena in solids is an important research frontier, encompassing effects like the optical enhancement of superconductivity 1 . Recently, nonlinear excitation 2 , 3 of certain phonons in bilayer cuprates was shown to induce superconducting-like optical properties at temperatures far above Tc 4,5,6. This effect was accompanied by the disruption of competing charge-density-wave correlations7,8, which explained some but not all of the experimental results. Here, we report a similar phenomenon in a very different compound. By exciting metallic K3C60 with mid-infrared optical pulses, we induce a large increase in carrier mobility, accompanied by the opening of a gap in the optical conductivity. Strikingly, these same signatures are observed at equilibrium when cooling metallic K3C60 below the superconducting transition temperature (Tc = 20 K). Although optical techniques alone cannot unequivocally identify non-equilibrium high-temperature superconductivity, we propose this scenario as a possible explanation of our results. PMID:26855424

  17. Nonequilibrium quantum Landauer principle.

    PubMed

    Goold, John; Paternostro, Mauro; Modi, Kavan

    2015-02-13

    Using the operational framework of completely positive, trace preserving operations and thermodynamic fluctuation relations, we derive a lower bound for the heat exchange in a Landauer erasure process on a quantum system. Our bound comes from a nonphenomenological derivation of the Landauer principle which holds for generic nonequilibrium dynamics. Furthermore, the bound depends on the nonunitality of dynamics, giving it a physical significance that differs from other derivations. We apply our framework to the model of a spin-1/2 system coupled to an interacting spin chain at finite temperature. PMID:25723198

  18. Nonequilibrium effects in Isoscaling

    SciTech Connect

    Dorso, C. O.; Lopez, J. A.

    2007-02-12

    In this work we study within a simple model different properties of the system that allow us to understand the properties of the isoscaling observable. We first show that isoscaling is a general property of fragmenting systems. We show this by using a simple generalized percolation model. We show that the usual isoscaling property can be obtained in the case of bond percolation in bichromatic lattices with any regular topology. In this case the probabilities of each color (isospin) are independent. We then explore the effect of introducing 'non-equilibrium' effects.

  19. Theory of nonequilibrium superconductivity in cuprates

    NASA Astrophysics Data System (ADS)

    Oka, Takashi; Pietilä, Ville

    2013-03-01

    Recently, nonequilibrium properties of Hi Tc superconductors are attracting much interest. This is because new experimental methods such as time resolved ARPES has been applied to cuprates and succeeded in observing the dynamics of photo-excited quasiparticles as well as the temporal evolution of the d-wave superconducting order parameter (e.g.,). One can also realize nonequilibrium states in interfaces between cuprates and metal electrodes and control the superconducting order by changing the applied bias. In order to study the dynamics of superconductivity in strongly correlated systems, we developed a novel numerical method by combining the quantum kinetic equation with the fluctuation exchange approximation (FLEX, self-consistent T-matrix approximation). This method enables us to study the interplay between pair mediating fluctuations, e.g., antiferromagnetic and charge fluctuations, and the dynamics of quasiparticles and superconducting order parameter. In the presentation, we explain the physical insights we obtain by applying this method to nonequilibrium dynamics in d-wave superconductors.

  20. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-01

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell. PMID:27075007

  1. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH.

    PubMed

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-19

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects. PMID:27145993

  2. Carrier transport in dichromatic color-coded semipolar (2021) and (2021) III-N LEDs

    NASA Astrophysics Data System (ADS)

    Kisin, Mikhail V.; Huang, Chih-Li; El-Ghoroury, Hussein S.

    2014-03-01

    Simulation of III-nitride color-coded multiple quantum well (MQW) LED structures was performed using as an experimental benchmark dichromatic semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Y. Kawaguchi et.al, APL 100, 231110, 2012). Different QW depths in the color-coded LEDs and opposite interface polarization charges in Ga-polar and N-polar structures provide different conditions for carrier transport across the LED active regions. Combination of several effects was crucial for adequate reproduction of the emission spectra experimentally observed in color-coded structures with violet-aquamarine and aquamarine-violet active region layouts. A standard drift-diffusion transport model wascompleted with rate equations for nonequilibrium QW populations and several high-energy transport features, including the effects of QW carrier overshoot and Auger-assisted QW depopulation. COMSOL-based Optoelectronic Device Modeling Software (ODMS) developed at Ostendo Technologies Inc. was utilized for device simulation.

  3. Non-equilibrium DMFT - Polaritonics

    NASA Astrophysics Data System (ADS)

    Lubatsch, Andreas; Frank, Regine

    Non-equilibrium physics recently really becomes important with the progress of ultrafast laser sciences. However in our understanding there is still a gap between equilibrium physics and the non-equilibrium, even though numerical methods have been advanced in recent years. We compare in this talk novel results at hand with equilibrium physics. The comparison will show that especially theoretical efforts are needed to explain many - so far - unresolved problems and to predict novel research on the basis of ab initio computing. We specifically discuss several non-equilibrium extensions of DMFT, numerical methods as well as semi-analytical solvers.

  4. Radiative interactions in nonequilibrium flows

    NASA Technical Reports Server (NTRS)

    Tiwari, S. N.; Chandrasekhar, R.

    1992-01-01

    The influence of vibrational and chemical nonequilibrium upon infrared radiative energy transfer in nonisothermal gases is investigated. Essential information is provided on rate equations, relaxation times, transfer equations, band absorption, and radiative flux equations. The methodology developed is applied to three specific cases. These are, absorbing-emitting species between isothermal parallel plates, radiating gases in the earth's atmosphere, and supersonic flow of premixed hydrogen and air in an expanding nozzle. The results obtained for different cases reveal that the extent of radiative interactions is reduced significantly under nonequilibrium conditions. The method developed can be easily extended to investigate radiative interactions in complex nonequilibrium flows.

  5. Delayed recombination of detrapped space-charge carriers in poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]-based light-emitting diode

    NASA Astrophysics Data System (ADS)

    Sinha, S.; Monkman, A. P.

    2005-06-01

    We report the observation of a spectroscopically resolved delayed electrofluorescence (DEF) in the time domain of nanosecond to microsecond (depending on temperature, in the range of 30-290 K, as well as bias) from light-emitting diodes based on poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene]. The decay kinetics of this DEF are always found to be biexponential in nature. The fast decaying component with a lifetime of ˜40ns is attributed to the back transfer of nonemissive (or very weakly emissive) interchain excited singlets (partially charge-transfer states) to emissive intrachain excited singlets (this component is called DEFCT). The relatively slower decaying component with a lifetime of ˜0.2-6.2μs (depending on temperature as well as bias) is attributed to the recombination of detrapped space-charge carriers at the polymer-electrode interfaces (this component is called DEFSC). The intensity of DEFSC increases as the temperature is increased from 30 to 290 K, although it is weak at low temperature (<100K). The temperature dependence of the recombination rate of the detrapped space-charge carriers yields two activation energies of 2.2 and 40 meV below and above ˜130K, respectively. The existence of these two activation energies is explained on the assumption of electrons being in shallow traps and holes in deep traps. Also, our data indicate that the space-charge carriers generally act as major quenching sites (especially at 290 K) for triplet excitons in polymer light-emitting diodes.

  6. Hall effect measurements on thermoelectric Ca{sub 3}Co{sub 4}O{sub 9}: On how to determine the charge carrier concentration in strongly correlated misfit cobaltites

    SciTech Connect

    Schrade, Matthias; Norby, Truls; Finstad, Terje G.

    2015-05-28

    The Hall coefficient R{sub H} and electrical conductivity of misfit calcium cobalt oxide (Ca{sub 2}CoO{sub 3−δ}){sub q}(CoO{sub 2}) (CCO) were measured at room temperature for different oxygen vacancy concentrations δ. Based on these and numerous previous results, it is shown that the charge carrier concentrations n obtained by the classical formula R{sub H} = 1/ne are between 3 and 6 × 10{sup 20} cm{sup −3} and thereby much lower than those derived by other experimental techniques and fail to explain the observed electric properties of CCO. We show that the experimental results are well described using an earlier proposed t–J-model for strongly correlated electrons on a triangular lattice. The hopping parameter t for CCO was found to be ≈ −20 K and the charge carrier concentration of fully oxidized CCO to be 5.7 × 10{sup 21} cm{sup −3} (0.41 hole type carriers per formula unit), in agreement with other experimental techniques.

  7. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    NASA Astrophysics Data System (ADS)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  8. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH

    NASA Astrophysics Data System (ADS)

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-01

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects.Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is

  9. Nonequilibrium thermodynamics of nucleation.

    PubMed

    Schweizer, M; Sagis, L M C

    2014-12-14

    We present a novel approach to nucleation processes based on the GENERIC framework (general equation for the nonequilibrium reversible-irreversible coupling). Solely based on the GENERIC structure of time-evolution equations and thermodynamic consistency arguments of exchange processes between a metastable phase and a nucleating phase, we derive the fundamental dynamics for this phenomenon, based on continuous Fokker-Planck equations. We are readily able to treat non-isothermal nucleation even when the nucleating cores cannot be attributed intensive thermodynamic properties. In addition, we capture the dynamics of the time-dependent metastable phase being continuously expelled from the nucleating phase, and keep rigorous track of the volume corrections to the dynamics. Within our framework the definition of a thermodynamic nuclei temperature is manifest. For the special case of nucleation of a gas phase towards its vapor-liquid coexistence, we illustrate that our approach is capable of reproducing recent literature results obtained by more microscopic considerations for the suppression of the nucleation rate due to nonisothermal effects. PMID:25494727

  10. Nonequilibrium thermodynamics of nucleation

    SciTech Connect

    Schweizer, M.; Sagis, L. M. C.

    2014-12-14

    We present a novel approach to nucleation processes based on the GENERIC framework (general equation for the nonequilibrium reversible-irreversible coupling). Solely based on the GENERIC structure of time-evolution equations and thermodynamic consistency arguments of exchange processes between a metastable phase and a nucleating phase, we derive the fundamental dynamics for this phenomenon, based on continuous Fokker-Planck equations. We are readily able to treat non-isothermal nucleation even when the nucleating cores cannot be attributed intensive thermodynamic properties. In addition, we capture the dynamics of the time-dependent metastable phase being continuously expelled from the nucleating phase, and keep rigorous track of the volume corrections to the dynamics. Within our framework the definition of a thermodynamic nuclei temperature is manifest. For the special case of nucleation of a gas phase towards its vapor-liquid coexistence, we illustrate that our approach is capable of reproducing recent literature results obtained by more microscopic considerations for the suppression of the nucleation rate due to nonisothermal effects.

  11. Charge transport in 4H-SiC detector structures under conditions of a high electric field

    SciTech Connect

    Ivanov, A. M. Mynbaeva, M. G.; Sadokhin, A. V.; Strokan, N. B.; Lebedev, A. A.

    2009-08-15

    Transport of nonequilibrium charge packets in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film has been studied at the maximum strength of an electric field at 1.1 MV/cm. The charge was introduced by separate {alpha}-particles and recorded by nuclear spectrometric techniques. A superlinear rise in the recorded charge as a function of the reverse bias applied to the structure was observed. Simultaneously, and also superlinearly increased the scatter in the spectrum of the charge amplitude. The observed effect is attributed to the initial stage of impact ionization. The manifestation of the process at unconventionally low fields ({approx}1 MV/cm) is accounted for by specific features of the process of charge generation. Carriers generated by slowing-down {alpha}-particles are 'hot' from the very beginning.

  12. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    SciTech Connect

    Sundqvist, Kyle Michael

    2012-01-01

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in nonequilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zeropoint fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-fight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged impurities, neutral impurities, static

  13. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    NASA Astrophysics Data System (ADS)

    Sundqvist, Kyle Michael

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in non-equilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zero-point fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-flight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged

  14. Elucidating the band structure and free charge carrier dynamics of pure and impurities doped CH3NH3PbI(3-x)Cl(x) perovskite thin films.

    PubMed

    Zhang, Zhen-Yu; Chen, Xin; Wang, Hai-Yu; Xu, Ming; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo

    2015-11-28

    CH3NH3PbI3-xClx perovskite material has been commonly used as the free charge generator and reservoir in highly efficient perovskite-based solid-state solar photovoltaic devices. However, many of the underlying fundamental photophysical mechanisms in this material such as the perovskite transition band structure as well as the dependent relationship between the carrier properties and lattice properties still lack sufficient understanding. Here, we elucidated the fundamental band structure of the pure CH3NH3PbI3-xClx pervoskite lattice, and then reported about the dependent relationship between the free charge carrier characteristic and the different CH3NH3PbI3-xClx pervoskite lattice thin films utilizing femtosecond time-resolved pump-probe technologies. The data demonstrated that the pure perovskite crystal band structure should only have one conduction and one valence band rather than dual valences, and the pure perovskite lattice could trigger more free charge carriers with a slower recombination rate under an identical pump intensity compared with the impurities doped perovskite crystal. We also investigated the perovskite film performance when exposed to moisture and water, the corresponding results gave us a dip in the optimization of the performance of perovskite based devices, and so as a priority this material should be isolated from moisture (water). This work may propose a deeper perspective on the comprehension for this material and it is useful for future optimization of applications in photovoltaic and light emission devices. PMID:26497219

  15. Probing Photoexcited Carriers in a Few-Layer MoS2 Laminate by Time-Resolved Optical Pump-Terahertz Probe Spectroscopy.

    PubMed

    Kar, Srabani; Su, Y; Nair, R R; Sood, A K

    2015-12-22

    We report the dynamics of photoinduced carriers in a free-standing MoS2 laminate consisting of a few layers (1-6 layers) using time-resolved optical pump-terahertz probe spectroscopy. Upon photoexcitation with the 800 nm pump pulse, the terahertz conductivity increases due to absorption by the photoinduced charge carriers. The relaxation of the non-equilibrium carriers shows fast as well as slow decay channels, analyzed using a rate equation model incorporating defect-assisted Auger scattering of photoexcited electrons, holes, and excitons. The fast relaxation time occurs due to the capture of electrons and holes by defects via Auger processes, resulting in nonradiative recombination. The slower relaxation arises since the excitons are bound to the defects, preventing the defect-assisted Auger recombination of the electrons and the holes. Our results provide a comprehensive understanding of the non-equilibrium carrier kinetics in a system of unscreened Coulomb interactions, where defect-assisted Auger processes dominate and should be applicable to other 2D systems. PMID:26516987

  16. Nonequilibrium phase transitions in cuprates observed by ultrafast electron crystallography.

    PubMed

    Gedik, Nuh; Yang, Ding-Shyue; Logvenov, Gennady; Bozovic, Ivan; Zewail, Ahmed H

    2007-04-20

    Nonequilibrium phase transitions, which are defined by the formation of macroscopic transient domains, are optically dark and cannot be observed through conventional temperature- or pressure-change studies. We have directly determined the structural dynamics of such a nonequilibrium phase transition in a cuprate superconductor. Ultrafast electron crystallography with the use of a tilted optical geometry technique afforded the necessary atomic-scale spatial and temporal resolutions. The observed transient behavior displays a notable "structural isosbestic" point and a threshold effect for the dependence of c-axis expansion (Deltac) on fluence (F), with Deltac/F = 0.02 angstrom/(millijoule per square centimeter). This threshold for photon doping occurs at approximately 0.12 photons per copper site, which is unexpectedly close to the density (per site) of chemically doped carriers needed to induce superconductivity. PMID:17446397

  17. Nonequilibrium thermodynamics of an interface

    NASA Astrophysics Data System (ADS)

    Schweizer, Marco; Öttinger, Hans Christian; Savin, Thierry

    2016-05-01

    Interfacial thermodynamics has deep ramifications in understanding the boundary conditions of transport theories. We present a formulation of local equilibrium for interfaces that extends the thermodynamics of the "dividing surface," as introduced by Gibbs, to nonequilibrium settings such as evaporation or condensation. By identifying the precise position of the dividing surface in the interfacial region with a gauge degree of freedom, we exploit gauge-invariance requirements to consistently define the intensive variables for the interface. The model is verified under stringent conditions by employing high-precision nonequilibrium molecular-dynamics simulations of a coexisting vapor-liquid Lennard-Jones fluid. We conclude that the interfacial temperature is determined using the surface tension as a "thermometer," and it can be significantly different from the temperatures of the adjacent phases. Our findings lay foundations for nonequilibrium interfacial thermodynamics.

  18. Nonequilibrium thermodynamics of an interface.

    PubMed

    Schweizer, Marco; Öttinger, Hans Christian; Savin, Thierry

    2016-05-01

    Interfacial thermodynamics has deep ramifications in understanding the boundary conditions of transport theories. We present a formulation of local equilibrium for interfaces that extends the thermodynamics of the "dividing surface," as introduced by Gibbs, to nonequilibrium settings such as evaporation or condensation. By identifying the precise position of the dividing surface in the interfacial region with a gauge degree of freedom, we exploit gauge-invariance requirements to consistently define the intensive variables for the interface. The model is verified under stringent conditions by employing high-precision nonequilibrium molecular-dynamics simulations of a coexisting vapor-liquid Lennard-Jones fluid. We conclude that the interfacial temperature is determined using the surface tension as a "thermometer," and it can be significantly different from the temperatures of the adjacent phases. Our findings lay foundations for nonequilibrium interfacial thermodynamics. PMID:27300960

  19. Boltzmann Fluctuations in Numerical Simulations of Nonequilibrium Lattice Threshold Systems

    SciTech Connect

    Rundle, J.B.; Klein, W.; Gross, S.; Turcotte, D.L.

    1995-08-21

    Nonequilibrium threshold systems such as slider blocks are now used to model a variety of dynamical systems, including earthquake faults, driven neural networks, and sliding charge density waves. We show that for general mean field models driven at low rates fluctuations in the internal energy field are characterized by Boltzmann statistics. Numerical simulations confirm this prediction. Our results indicate that mean field models can be effectively treated as equilibrium systems.

  20. Nonequilibrium spin crossover in copper phthalocyanine

    NASA Astrophysics Data System (ADS)

    Siegert, Benjamin; Donarini, Andrea; Grifoni, Milena

    2016-03-01

    We demonstrate the nonequilibrium tip induced control of the spin state of copper phthalocyanine on an insulator coated substrate. We find that, under the condition of energetic proximity of many-body neutral excited states to the anionic ground state, the system can undergo a population inversion towards these excited states. The resulting state of the system is accompanied by a change in the total spin quantum number. Experimental signatures of the crossover are the appearance of additional nodal planes in the topographical scanning tunneling microscopy images as well as a strong suppression of the current near the center of the molecule. The robustness of the effect against moderate charge conserving relaxation processes has also been tested.

  1. Nonequilibrium detonation of composite explosives

    SciTech Connect

    Nichols III, A.L.

    1997-07-01

    The effect of nonequilibrium diffusional flow on detonation velocities in composite explosives is examined. Detonation conditions are derived for complete equilibrium, temperature and pressure equilibrium, and two forms of pressure equilibrium. Partial equilibria are associated with systems which have not had sufficient time for transport to smooth out the gradients between spatially separate regions. The nonequilibrium detonation conditions are implemented in the CHEQ equation of state code. We show that the detonation velocity decreases as the non-chemical degrees of freedom of the explosive are allowed to equilibrate. It is only when the chemical degrees of freedom are allowed to equilibrate that the detonation velocity increases.

  2. Nonequilibrium drift-diffusion model for organic semiconductor devices

    NASA Astrophysics Data System (ADS)

    Felekidis, Nikolaos; Melianas, Armantas; Kemerink, Martijn

    2016-07-01

    Two prevailing formalisms are currently used to model charge transport in organic semiconductor devices. Drift-diffusion calculations, on the one hand, are time effective but assume local thermodynamic equilibrium, which is not always realistic. Kinetic Monte Carlo models, on the other hand, do not require this assumption but are computationally expensive. Here, we present a nonequilibrium drift-diffusion model that bridges this gap by fusing the established multiple trap and release formalism with the drift-diffusion transport equation. For a prototypical photovoltaic system the model is shown to quantitatively describe, with a single set of parameters, experiments probing (1) temperature-dependent steady-state charge transport—space-charge limited currents, and (2) time-resolved charge transport and relaxation of nonequilibrated photocreated charges. Moreover, the outputs of the developed kinetic drift-diffusion model are an order of magnitude, or more, faster to compute and in good agreement with kinetic Monte Carlo calculations.

  3. a Nonequilibrium Plasmadynamics Model for Nitrogen/hydrogen Arcjets

    NASA Astrophysics Data System (ADS)

    Megli, Thomas W.

    Electrothermal arcjets offer significant cost advantage over conventional satellite propulsion systems. In these devices, the propellant is electrically heated, allowing for higher temperatures and specific impulse than chemical rockets. Despite the relative simplicity of the basic design, many complex physical processes are poorly understood. Less than 50% of the electrical power is converted to thrust kinetic power. A numerical model is developed to study arcjet plasma flowfields. The model employs a modified set of Navier-Stokes equations, which includes separate energy equations for the electrons and heavy species. A thermal nonequilibrium, chemical equilibrium model is first developed, and then generalized to chemical nonequilibrium. A seven -species plasma of molecules, atoms, and ions is assumed for a variable mixture ratio of nitrogen and hydrogen. This permits simulation of various propellants, including hydrogen, ammonia, and hydrazine. Equations for charge continuity and Ohm's Law are employed to predict the arc current distribution. A thermal model for the nozzle is also included. The combined features of thermal nonequilibrium, chemical nonequilibrium, and propellant flexibility distinguish this model from previous research efforts. Model calculations are presented for 1-2 kW-class arcjets operating with hydrogen and hydrazine propellants. Thermal equilibrium is predicted in the highly ionized arc core, while electron temperatures near the electrodes are an order of magnitude greater than heavy species temperatures. The thermal nonequilibrium enhances ionization and electrical conductivity, and thus governs the current attachment to the nozzle. A comparison of chemical equilibrium and nonequilibrium simulations indicates that ambipolar diffusion of electrons and ions also controls the current conduction. The model is compared with experimental measurements. Respective calculations for specific impulse and exhaust velocities are within approximately 5

  4. Open problems in non-equilibrium physics

    SciTech Connect

    Kusnezov, D.

    1997-09-22

    The report contains viewgraphs on the following: approaches to non-equilibrium statistical mechanics; classical and quantum processes in chaotic environments; classical fields in non-equilibrium situations: real time dynamics at finite temperature; and phase transitions in non-equilibrium conditions.

  5. Nonlinear and Nonequilibrium Spin Injection in Magnetic Tunneling Junctions

    NASA Astrophysics Data System (ADS)

    Guo, Hong

    2007-03-01

    Quantitative analysis of charge and spin quantum transport in spintronic devices requires an atomistic first principles approach that can handle nonlinear and nonequilibrium transport conditions. We have developed an approach for this purpose based on real space density functional theory (DFT) carried out within the Keldysh nonequilibrium Green's function formalism (NEGF). We report theoretical analysis of nonlinear and nonequilibrium spin injection and quantum transport in Fe/MgO/Fe trilayer structures as a function of external bias voltage. Devices with well relaxed atomic structures and with FeO oxidization layers are investigated as a function of external bias voltage. We also report calculations of nonequilibrium spin injection into molecular layers and graphene. Comparisons to experimental data will be presented. Work in collaborations with: Derek Waldron, Vladimir Timochevski (McGill University); Ke Xia (Institute of Physics, Chinese Academy of Science, Beijing, China); Eric Zhu, Jian Wang (University of Hong Kong); Paul Haney, and Allan MacDonald (University of Texas at Austin).

  6. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, Pavel; Gatti, Emilio

    1987-01-01

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  7. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1987-08-18

    A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

  8. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1984-02-24

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  9. Computer simulation of nonequilibrium processes

    SciTech Connect

    Hoover, W.G.; Moran, B.; Holian, B.L.; Posch, H.A.; Bestiale, S.

    1987-01-01

    Recent atomistic simulations of irreversible macroscopic hydrodynamic flows are illustrated. An extension of Nose's reversible atomistic mechanics makes it possible to simulate such non-equilibrium systems with completely reversible equations of motion. The new techniques show that macroscopic irreversibility is a natural inevitable consequence of time-reversible Lyapunov-unstable microscopic equations of motion.

  10. Nonequilibrium diagnostics of plasma thrusters

    SciTech Connect

    Eddy, T.L.; Grandy, J.D.

    1990-01-01

    This paper describes possible techniques by which the state of plasma thruster operation for space propulsion can be determined from a minimum set of experimental data in the laboratory. The kinetic properties of the nonequilibrium plasma plume usually can not be directly related to the observed radiation; hence, appropriate nonequilibrium diagnostic techniques must be employed. A newly developed multithermal, multichemical equilibrium method is discussed that uses measured line emission intensities and N equations to solve for N unknowns. The effect of arbitrarily changing the number of selected N unknowns and how one determines the optimum (minimum) number to be used for a given composition is also presented. The chemical nonequilibrium aspects and the application to molecular species have not yet been published. The important conclusions are that (1) complete thermodynamic systems in nonequilibrium can be described by relatively few variables if appropriate choices and filtering methods are used, (2) a few radiation measurements can yield valid kinetic properties, and (3) the major question in the relations to be used is in the form of the law of mass action. The results are substantiated in the laboratory by additional alternative methods of measurement of some of the kinetic properties. 13 refs., 1 fig.

  11. Nonequilibrium breakdown of a correlated insulator through pattern formation

    NASA Astrophysics Data System (ADS)

    Ribeiro, Pedro; Antipov, Andrey E.; Rubtsov, Alexey N.

    2016-04-01

    We study the breakdown of an interaction-induced insulator under an imposed bias voltage. A rich voltage-temperature phase diagram is found that contains phases with a spatially patterned charge gap. Nonequilibrium conditions are shown to be able to change the antiferromagnetic nature of the equilibrium correlations. Above a threshold voltage, smaller than the charge gap, the formation of patterns occurs together with the emergence of midgap states yielding a finite conductance. We discuss the experimental implications of this proposed scenario for the breakdown of the insulating state.

  12. Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

    PubMed

    Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-06-01

    The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells. PMID:27157358

  13. Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure

    SciTech Connect

    J Kim; K Ji; M Jang; H Yang; R Choi; J Jeong

    2011-12-31

    Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 x 10{sup 20} cm{sup 03}), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO{sub 2}/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO{sub 2} exhibited high electron mobilities of 13.4 cm{sup 2} V{sup -1} s{sup -1}, a low subthreshold gate swing of 0.25 V decade{sup -1}, and a high I{sub on}/I{sub off} ratio of >1 x 10{sup 8}.

  14. Influence of the charge state of recombination centers on the photosensitivity of semiconductors

    SciTech Connect

    Karakis, Yu.N.; Vasilevskii, D.L.; Moreno, K.; Serdyuk, V.V.

    1988-12-01

    The introduction of recombination centers with significantly different capture cross sections for the majority (S/sub n/) and minority (S/sub p/) charge carriers (W/sub p//S/sub n/ > 10/sup 4/) into photosensitive semiconductors such as CdSe, CdS, and some other compounds significantly increases the lifetime of the nonequilibrium electrons /tau//sub n/ in a number of cases. The authors made an attempt to precisely describe the variation of the lifetime of the majority current carriers in a semiconductor with enhanced photosensitivity. The results of the calculations show that the variation of the lifetime of the majority charge carriers in a sample with enhanced photosensitivity depends on the charge state of the centers which play the role of the rapid-recombination centers. When these centers are positively charged, /tau//sub n/ increases by /approx/2 orders of magnitude. If the electrons are captured in neutral levels, the lifetime /tau//sub n/ varies to a considerably greater degree. In both cases, an increase in the photoexcitation intensity results, as expected, in a decrease in /tau//sub n/ in a crystal with increased photosensitivity.

  15. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics. PMID:27479904

  16. Free Carriers versus Excitons in CH3NH3PbI3 Perovskite Thin Films at Low Temperatures: Charge Transfer from the Orthorhombic Phase to the Tetragonal Phase.

    PubMed

    Phuong, Le Quang; Yamada, Yasuhiro; Nagai, Masaya; Maruyama, Naoki; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-07-01

    We have investigated the dynamic optical properties of CH3NH3PbI3 (MAPbI3) perovskite thin films at low temperatures using time-resolved photoluminescence, optical transient absorption (TA), and THz TA spectroscopy. Optical spectroscopic results indicate that the high-temperature tetragonal phase still remains in the MAPbI3 thin films at low temperatures in addition to the major orthorhombic phase. The fast charge transfer from the orthorhombic phase to the tetragonal phase is likely to suppress the formation of excitons in the orthorhombic phase. Consequently, the near-band-edge optical responses of the photocarriers in both the tetragonal and orthorhombic phases of the MAPbI3 thin films are more accurately described by a free-carrier model, rather than an excitonic model even at low temperatures. PMID:27269590

  17. Plasma instabilities in a steady-state nonequilibrium one-dimensional solid-state plasma of finite length

    SciTech Connect

    Kempa, K.; Bakshi, P.; Gornik, E.

    1996-09-01

    We show theoretically that strong plasma mode generation is possible in a nonequilibrium steady-state quasi-one-dimensional bounded solid-state plasma, in which a nonequilibrium distribution is maintained by appropriate injection/extraction of carriers. We calculate the density response of realistic model systems using the random-phase approximation, determine the normal modes of the bounded carrier plasma, and show that strong plasma instabilities can be generated under suitable conditions. Such stimulated plasma oscillations could lead to sources of terahertz electromagnetic radiation. {copyright} {ital 1996 The American Physical Society.}

  18. Nonequilibrium thermodynamics of an interface

    NASA Astrophysics Data System (ADS)

    Savin, Thierry; Schweizer, Marco; Öttinger, Hans Christian

    Interfacial thermodynamics has deep ramifications in understanding the boundary conditions of transport theories. We present a formulation of local equilibrium for interfaces that extends the thermodynamics of the ``dividing surface,'' as introduced by Gibbs, to nonequilibrium settings such as evaporation or condensation. By identifying the precise position of the dividing surface in the interfacial region with a gauge degree of freedom, we exploit gauge-invariance requirements to consistently define the intensive variables for the interface. The model is verified under stringent conditions by employing high-precision nonequilibrium molecular dynamics simulations of a coexisting vapor-liquid Lennard-Jones fluid. We conclude that the interfacial temperature is determined using the surface tension as a ``thermometer,'' and can be significantly different from the temperatures of the adjacent phases.

  19. 14 CFR 389.24 - Foreign air carriers.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false Foreign air carriers. 389.24 Section 389.24...) ORGANIZATION FEES AND CHARGES FOR SPECIAL SERVICES Filing and Processing License Fees § 389.24 Foreign air carriers. A foreign air carrier, or such carriers, if from the same country, acting jointly, may apply...

  20. 14 CFR 389.24 - Foreign air carriers.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false Foreign air carriers. 389.24 Section 389.24...) ORGANIZATION FEES AND CHARGES FOR SPECIAL SERVICES Filing and Processing License Fees § 389.24 Foreign air carriers. A foreign air carrier, or such carriers, if from the same country, acting jointly, may apply...

  1. 14 CFR 389.24 - Foreign air carriers.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Foreign air carriers. 389.24 Section 389.24...) ORGANIZATION FEES AND CHARGES FOR SPECIAL SERVICES Filing and Processing License Fees § 389.24 Foreign air carriers. A foreign air carrier, or such carriers, if from the same country, acting jointly, may apply...

  2. 14 CFR 389.24 - Foreign air carriers.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Foreign air carriers. 389.24 Section 389.24...) ORGANIZATION FEES AND CHARGES FOR SPECIAL SERVICES Filing and Processing License Fees § 389.24 Foreign air carriers. A foreign air carrier, or such carriers, if from the same country, acting jointly, may apply...

  3. Computer simulation of nonequilibrium processes

    SciTech Connect

    Wallace, D.C.

    1985-07-01

    The underlying concepts of nonequilibrium statistical mechanics, and of irreversible thermodynamics, will be described. The question at hand is then, how are these concepts to be realize in computer simulations of many-particle systems. The answer will be given for dissipative deformation processes in solids, on three hierarchical levels: heterogeneous plastic flow, dislocation dynamics, an molecular dynamics. Aplication to the shock process will be discussed.

  4. Direct measurement of the exciton binding energy and effective masses for charge carriers in organic-inorganic tri-halide perovskites

    NASA Astrophysics Data System (ADS)

    Miyata, Atsuhiko; Mitioglu, Anatolie; Plochocka, Paulina; Portugall, Oliver; Wang, Jacob Tse-Wei; Stranks, Samuel D.; Snaith, Henry J.; Nicholas, Robin J.

    2015-07-01

    Solar cells based on the organic-inorganic tri-halide perovskite family of materials have shown significant progress recently, offering the prospect of low-cost solar energy from devices that are very simple to process. Fundamental to understanding the operation of these devices is the exciton binding energy, which has proved both difficult to measure directly and controversial. We demonstrate that by using very high magnetic fields it is possible to make an accurate and direct spectroscopic measurement of the exciton binding energy, which we find to be only 16 meV at low temperatures, over three times smaller than has been previously assumed. In the room-temperature phase we show that the binding energy falls to even smaller values of only a few millielectronvolts, which explains their excellent device performance as being due to spontaneous free-carrier generation following light absorption. Additionally, we determine the excitonic reduced effective mass to be 0.104me (where me is the electron mass), significantly smaller than previously estimated experimentally but in good agreement with recent calculations. Our work provides crucial information about the photophysics of these materials, which will in turn allow improved optoelectronic device operation and better understanding of their electronic properties.

  5. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br

    NASA Astrophysics Data System (ADS)

    Brandenburg, Jens; Müller, Jens; Schlueter, John A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  6. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  7. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    SciTech Connect

    Mitoma, Nobuhiko E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  8. Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

    PubMed

    Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

    2014-01-01

    Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains. PMID:24613942

  9. Thermodynamic aspects of nonequilibrium current fluctuations

    NASA Astrophysics Data System (ADS)

    Jou, D.; Llebot, J. E.; Casas-Vázquez, J.

    1982-06-01

    Starting from a macroscopic nonequilibrium entropy, we obtain an expression for the nonequilibrium fluctuations of the electric current in a metallic resistor. Our method goes further than previous theories of irreversible thermodynamics and, as well as microscopic entropies, it leads to results of the same order of magnitude but not completely coincident with the full nonequilibrium corrections obtained from kinetic methods by Tremblay et al.

  10. Nonequilibrium chemistry boundary layer integral matrix procedure

    NASA Technical Reports Server (NTRS)

    Tong, H.; Buckingham, A. C.; Morse, H. L.

    1973-01-01

    The development of an analytic procedure for the calculation of nonequilibrium boundary layer flows over surfaces of arbitrary catalycities is described. An existing equilibrium boundary layer integral matrix code was extended to include nonequilibrium chemistry while retaining all of the general boundary condition features built into the original code. For particular application to the pitch-plane of shuttle type vehicles, an approximate procedure was developed to estimate the nonequilibrium and nonisentropic state at the edge of the boundary layer.

  11. The Free Action of Nonequilibrium Dynamics

    NASA Astrophysics Data System (ADS)

    Li, Qianxiao; E, Weinan

    2015-10-01

    In general nonequilibrium steady states, directly replacing the canonical ensemble by the nonequilibrium invariant distribution yields a free energy function that is insufficient in characterizing the dynamical landscape. We address the problem by defining the free action, which is like a free energy on path space. Through a representative example, we demonstrate the conceptual and practical usefulness of the free action for quantifying the dynamics of nonequilibrium steady states, including those exhibiting phase transitions.

  12. Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

    NASA Astrophysics Data System (ADS)

    Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

    2015-04-01

    CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft< τ \\right> \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft< τ \\right> and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to

  13. The influence of orientations and external electric field on charge carrier mobilities in CuPc and F16CuPc films on highly ordered pyrolytic graphite and octane-1-thiol terminated Au(111) substrates.

    PubMed

    Chen, Shuang; Ma, Jing

    2010-10-14

    The lying-down and standing-up CuPc and F(16)CuPc films on HOPG (highly ordered pyrolytic graphite) and C8-SAM/Au(111) (octane-1-thiol terminated Au(111)) substrates are investigated by using a hybrid strategy combing the molecular dynamic (MD) simulations with density functional theory (DFT) calculations, in order to understand the influence of packing orientation on charge carrier mobilities. On the basis of the periodic slab model and consistent-valence force field, MD simulations show the populations of various packing configurations and radial distribution of intermolecular distance in the films at room temperature. It is also demonstrated that the external electric field (parallel or perpendicular to the substrate) perturbs the intermolecular distances in CuPc and F(16)CuPc films, especially for the slipped edge-to-face stackings. DFT calculations are then used to evaluate two key charge-transfer parameters, reorganization energy and transfer integral. An electrostatics embedding model is employed to approximately consider the external electrostatics contributions to reorganization energy. The thermal-averaged mobility is consequently estimated by taking account of both electronic structures of charge-hopping pairs and dynamic fluctuations in film morphologies under various experimental conditions. It is found that CuPc has smaller reorganization energy and larger hole (electron) mobilities than F(16)CuPc. Under the external electric field of 10(4)-10(7) V cm(-1), both hole and electron mobilities of CuPc and F(16)CuPc films would decrease to 1-3 orders of magnitude. CuPc (F(16)CuPc) films show substantial orientation dependence of mobilities on the ratio of standing-up versus lying-down orientations falling in the range of 10-1000. PMID:20714578

  14. Nonequilibrium volumetric response of shocked polymers

    SciTech Connect

    Clements, B E

    2009-01-01

    Polymers are well known for their non-equilibrium deviatoric behavior. However, investigations involving both high rate shock experiments and equilibrium measured thermodynamic quantities remind us that the volumetric behavior also exhibits a non-equilibrium response. Experiments supporting the notion of a non-equilibrium volumetric behavior will be summarized. Following that discussion, a continuum-level theory is proposed that will account for both the equilibrium and non-equilibrium response. Upon finding agreement with experiment, the theory is used to study the relaxation of a shocked polymer back towards its shocked equilibrium state.

  15. Nonequilibrium transport in superconducting filaments

    NASA Technical Reports Server (NTRS)

    Arutyunov, K. YU.; Danilova, N. P.; Nikolaeva, A. A.

    1995-01-01

    The step-like current-voltage characteristics of highly homogeneous single-crystalline tin and indium thin filaments has been measured. The length of the samples L approximately 1 cm was much greater than the nonequilibrium quasiparticle relaxation length Lambda. It was found that the activation of a successive i-th voltage step occurs at current significantly greater than the one derived with the assumption that the phase slip centers are weakly interacting on a scale L much greater than Lambda. The observation of 'subharmonic' fine structure on the voltage-current characteristics of tin filaments confirms the hypothesis of the long-range phase slip centers interaction.

  16. Nozzle flow with vibrational nonequilibrium

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Landry, J. G.

    1995-01-01

    This research concerns the modeling and numerical solutions of the coupled system of compressible Navier-Stokes equations in cylindrical coordinates under conditions of equilibrium and nonequilibrium thermodynamics. The problem considered was the modeling of a high temperature diatomic gas N2 flowing through a converging-diverging high expansion nozzle. The problem was modeled in two ways. The first model uses a single temperature with variable specific heats as functions of this temperature. For the second model we assume that the various degrees of freedom all have a Boltzmann distribution and that there is a continuous redistribution of energy among the various degrees of freedom as the gas passes through the nozzle. Each degree of freedom is assumed to have its own temperature and, consequently, each system state can be characterized by these temperatures. This suggests that formulation of a second model with a vibrational degree of freedom along with a rotational-translation degree of freedom, each degree of freedom having its own temperature. Initially the vibrational degree of freedom is excited by heating the gas to a high temperature. As the high temperature gas passes through the nozzle throat there is a sudden drop in temperature along with a relaxation time for the vibrational degree of freedom to achieve equilibrium with the rotational-translation degree of freedom. That is, we assume that the temperature change upon passing through the throat is so great that the changes in the vibrational degree of freedom occur at a much slower pace and consequently lags behind the rotational-translational energy changes. This lag results in a finite relaxation time. In this context the term nonequilibrium is used to denote the fact that the energy content of the various degrees of freedom are characterized by two temperatures. We neglect any chemical reactions which could also add nonequilibrium effects. We develop the energy equations for the nonequilibrium model

  17. Scientific Affairs Division of NATO Advanced Study Institute: abstracts for nonequilibrium superconductivity, phonons and Kapitza boundaries

    SciTech Connect

    1980-05-01

    Abstracts of papers presented at the meeting are given. Topics covered include: Kapitza resistance; superconducting tunneling; energy gap enhancement in superconductors; instabilities in nonequilibrium superconducting states; exchange of charge between superconducting pairs and quasiparticles; motion of magnetic flux (flux flow); and other new phenomena. (GHT)

  18. Exploiting non-equilibrium phase separation for self-assembly.

    PubMed

    Grünwald, Michael; Tricard, Simon; Whitesides, George M; Geissler, Phillip L

    2016-02-01

    Demixing can occur in systems of two or more particle species that experience different driving forces, e.g., mixtures of self-propelled active particles or of oppositely charged colloids subject to an electric field. Here we show with macroscopic experiments and computer simulations that the forces underlying such non-equilibrium segregation can be used to control the self-assembly of particles that lack attractive interactions. We demonstrate that, depending on the direction, amplitude and frequency of a periodic external force acting on one particle species, the structures formed by a second, undriven species can range from compact clusters to elongated, string-like patterns. PMID:26658789

  19. Model of opacity and emissivity of non-equilibrium plasma

    NASA Astrophysics Data System (ADS)

    Politov, V. Y.

    2008-05-01

    In this work the model describing absorption and emission properties of the non-equilibrium plasma is presented. It is based on the kinetics equations for populations of the ground, singly and doubly excited states of multi-charged ions. After solving these equations, the states populations together with the spectroscopic data, supplied in the special database for a lot ionization stages, are used for building the spectral distributions of plasma opacity and emissivity in STA approximation. Results of kinetics simulation are performed for such important X-ray converter as gold, which is investigated intensively in ICF-experiments.

  20. Non-equilibrium phase transitions

    SciTech Connect

    Mottola, E.; Cooper, F.M.; Bishop, A.R.; Habib, S.; Kluger, Y.; Jensen, N.G.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Non-equilibrium phase transitions play a central role in a very broad range of scientific areas, ranging from nuclear, particle, and astrophysics to condensed matter physics and the material and biological sciences. The aim of this project was to explore the path to a deeper and more fundamental understanding of the common physical principles underlying the complex real time dynamics of phase transitions. The main emphasis was on the development of general theoretical tools to deal with non-equilibrium processes, and of numerical methods robust enough to capture the time-evolving structures that occur in actual experimental situations. Specific applications to Laboratory multidivisional efforts in relativistic heavy-ion physics (transition to a new phase of nuclear matter consisting of a quark-gluon plasma) and layered high-temperature superconductors (critical currents and flux flow at the National High Magnetic Field Laboratory) were undertaken.

  1. INTRODUCTION: Nonequilibrium Processes in Plasmas

    NASA Astrophysics Data System (ADS)

    Petrović, Zoran; Marić, Dragana; Malović, Gordana

    2009-07-01

    This book aims to give a cross section from a wide range of phenomena that, to different degrees, fall under the heading of non-equilibrium phenomenology. The selection is, of course, biased by the interests of the members of the scientific committee and of the FP6 Project 026328 IPB-CNP Reinforcing Experimental Centre for Non-equilibrium Studies with Application in Nano-technologies, Etching of Integrated Circuits and Environmental Research. Some of the papers included here are texts based on selected lectures presented at the Second International Workshop on Non-equilibrium Processes in Plasmas and Environmental Science. However, this volume is not just the proceedings of that conference as it contains a number of papers from authors that did not attend the conference. The goal was to put together a volume that would cover the interests of the project and support further work. It is published in the Institute of Physics journal Journal of Physics: Conference Series to ensure a wide accessibility of the articles. The texts presented here range from in-depth reviews of the current status and past achievements to progress reports of currently developed experimental devices and recently obtained still unpublished results. All papers have been refereed twice, first when speakers were selected based on their reputation and recently published results, and second after the paper was submitted both by the editorial board and individual assigned referees according to the standards of the conference and of the journal. Nevertheless, we still leave the responsibility (and honours) for the contents of the papers to the authors. The papers in this book are review articles that give a summary of the already published work or present the work in progress that will be published in full at a later date (or both). In the introduction to the first volume, in order to show how far reaching, ubiquitous and important non-equilibrium phenomena are, we claimed that ever since the early

  2. Thermodynamics of Stability of Nonequilibrium Steady States.

    ERIC Educational Resources Information Center

    Rastogi, R. P.; Shabd, Ram

    1983-01-01

    Presented is a concise and critical account of developments in nonequilibrium thermodynamics. The criterion for stability of nonequilibrium steady states is critically examined for consecutive and monomolecular triangular reactions, autocatalytic reactions, auto-inhibited reactions, and the Lotka-Volterra model. (JN)

  3. INTRODUCTION: Nonequilibrium Processes in Plasmas

    NASA Astrophysics Data System (ADS)

    Petrović, Zoran; Marić, Dragana; Malović, Gordana

    2009-07-01

    This book aims to give a cross section from a wide range of phenomena that, to different degrees, fall under the heading of non-equilibrium phenomenology. The selection is, of course, biased by the interests of the members of the scientific committee and of the FP6 Project 026328 IPB-CNP Reinforcing Experimental Centre for Non-equilibrium Studies with Application in Nano-technologies, Etching of Integrated Circuits and Environmental Research. Some of the papers included here are texts based on selected lectures presented at the Second International Workshop on Non-equilibrium Processes in Plasmas and Environmental Science. However, this volume is not just the proceedings of that conference as it contains a number of papers from authors that did not attend the conference. The goal was to put together a volume that would cover the interests of the project and support further work. It is published in the Institute of Physics journal Journal of Physics: Conference Series to ensure a wide accessibility of the articles. The texts presented here range from in-depth reviews of the current status and past achievements to progress reports of currently developed experimental devices and recently obtained still unpublished results. All papers have been refereed twice, first when speakers were selected based on their reputation and recently published results, and second after the paper was submitted both by the editorial board and individual assigned referees according to the standards of the conference and of the journal. Nevertheless, we still leave the responsibility (and honours) for the contents of the papers to the authors. The papers in this book are review articles that give a summary of the already published work or present the work in progress that will be published in full at a later date (or both). In the introduction to the first volume, in order to show how far reaching, ubiquitous and important non-equilibrium phenomena are, we claimed that ever since the early

  4. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states

    NASA Astrophysics Data System (ADS)

    Bjorgaard, J. A.; Velizhanin, K. A.; Tretiak, S.

    2016-04-01

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited state molecular dynamics. In this work, we describe methods of simulating nonequilibrium solvent effects in excited state molecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibrium due to photoexcitation and emission.

  5. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states.

    PubMed

    Bjorgaard, J A; Velizhanin, K A; Tretiak, S

    2016-04-21

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited statemolecular dynamics. In this work, we describe methods of simulating nonequilibrium solvent effects in excited statemolecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibrium due to photoexcitation and emission. PMID:27389206

  6. Nonequilibrium structure in sequential assembly

    NASA Astrophysics Data System (ADS)

    Popov, Alexander V.; Craven, Galen T.; Hernandez, Rigoberto

    2015-11-01

    The assembly of monomeric constituents into molecular superstructures through sequential-arrival processes has been simulated and theoretically characterized. When the energetic interactions allow for complete overlap of the particles, the model is equivalent to that of the sequential absorption of soft particles on a surface. In the present work, we consider more general cases by including arbitrary aggregating geometries and varying prescriptions of the connectivity network. The resulting theory accounts for the evolution and final-state configurations through a system of equations governing structural generation. We find that particle geometries differ significantly from those in equilibrium. In particular, variations of structural rigidity and morphology tune particle energetics and result in significant variation in the nonequilibrium distributions of the assembly in comparison to the corresponding equilibrium case.

  7. Local non-equilibrium thermodynamics

    PubMed Central

    Jinwoo, Lee; Tanaka, Hajime

    2015-01-01

    Local Shannon entropy lies at the heart of modern thermodynamics, with much discussion of trajectory-dependent entropy production. When taken at both boundaries of a process in phase space, it reproduces the second law of thermodynamics over a finite time interval for small scale systems. However, given that entropy is an ensemble property, it has never been clear how one can assign such a quantity locally. Given such a fundamental omission in our knowledge, we construct a new ensemble composed of trajectories reaching an individual microstate, and show that locally defined entropy, information, and free energy are properties of the ensemble, or trajectory-independent true thermodynamic potentials. We find that the Boltzmann-Gibbs distribution and Landauer's principle can be generalized naturally as properties of the ensemble, and that trajectory-free state functions of the ensemble govern the exact mechanism of non-equilibrium relaxation. PMID:25592077

  8. Nonequilibrium fluctuations in a resistor

    NASA Astrophysics Data System (ADS)

    Garnier, N.; Ciliberto, S.

    2005-06-01

    In small systems where relevant energies are comparable to thermal agitation, fluctuations are of the order of average values. In systems in thermodynamical equilibrium, the variance of these fluctuations can be related to the dissipation constant in the system, exploiting the fluctuation-dissipation theorem. In nonequilibrium steady systems, fluctuations theorems (FT) additionally describe symmetry properties of the probability density functions (PDFs) of the fluctuations of injected and dissipated energies. We experimentally probe a model system: an electrical dipole driven out of equilibrium by a small constant current I , and show that FT are experimentally accessible and valid. Furthermore, we stress that FT can be used to measure the dissipated power P¯ =R I2 in the system by just studying the PDFs’ symmetries.

  9. Local non-equilibrium thermodynamics.

    PubMed

    Jinwoo, Lee; Tanaka, Hajime

    2015-01-01

    Local Shannon entropy lies at the heart of modern thermodynamics, with much discussion of trajectory-dependent entropy production. When taken at both boundaries of a process in phase space, it reproduces the second law of thermodynamics over a finite time interval for small scale systems. However, given that entropy is an ensemble property, it has never been clear how one can assign such a quantity locally. Given such a fundamental omission in our knowledge, we construct a new ensemble composed of trajectories reaching an individual microstate, and show that locally defined entropy, information, and free energy are properties of the ensemble, or trajectory-independent true thermodynamic potentials. We find that the Boltzmann-Gibbs distribution and Landauer's principle can be generalized naturally as properties of the ensemble, and that trajectory-free state functions of the ensemble govern the exact mechanism of non-equilibrium relaxation. PMID:25592077

  10. Nonequilibrium migration in human history.

    PubMed Central

    Wakeley, J

    1999-01-01

    A nonequilibrium migration model is proposed and applied to genetic data from humans. The model assumes symmetric migration among all possible pairs of demes and that the number of demes is large. With these assumptions it is straightforward to allow for changes in demography, and here a single abrupt change is considered. Under the model this change is identical to a change in the ancestral effective population size and might be caused by changes in deme size, in the number of demes, or in the migration rate. Expressions for the expected numbers of sites segregating at particular frequencies in a multideme sample are derived. A maximum-likelihood analysis of independent polymorphic restriction sites in humans reveals a decrease in effective size. This is consistent with a change in the rates of migration among human subpopulations from ancient low levels to present high ones. PMID:10581291

  11. Nonequilibrium radiative hypersonic flow simulation

    NASA Astrophysics Data System (ADS)

    Shang, J. S.; Surzhikov, S. T.

    2012-08-01

    Nearly all the required scientific disciplines for computational hypersonic flow simulation have been developed on the framework of gas kinetic theory. However when high-temperature physical phenomena occur beneath the molecular and atomic scales, the knowledge of quantum physics and quantum chemical-physics becomes essential. Therefore the most challenging topics in computational simulation probably can be identified as the chemical-physical models for a high-temperature gaseous medium. The thermal radiation is also associated with quantum transitions of molecular and electronic states. The radiative energy exchange is characterized by the mechanisms of emission, absorption, and scattering. In developing a simulation capability for nonequilibrium radiation, an efficient numerical procedure is equally important both for solving the radiative transfer equation and for generating the required optical data via the ab-initio approach. In computational simulation, the initial values and boundary conditions are paramount for physical fidelity. Precise information at the material interface of ablating environment requires more than just a balance of the fluxes across the interface but must also consider the boundary deformation. The foundation of this theoretic development shall be built on the eigenvalue structure of the governing equations which can be described by Reynolds' transport theorem. Recent innovations for possible aerospace vehicle performance enhancement via an electromagnetic effect appear to be very attractive. The effectiveness of this mechanism is dependent strongly on the degree of ionization of the flow medium, the consecutive interactions of fluid dynamics and electrodynamics, as well as an externally applied magnetic field. Some verified research results in this area will be highlighted. An assessment of all these most recent advancements in nonequilibrium modeling of chemical kinetics, chemical-physics kinetics, ablation, radiative exchange

  12. Non-equilibrium Transport of Light

    NASA Astrophysics Data System (ADS)

    Wang, Chiao-Hsuan; Taylor, Jacob

    Non-equilibrium Transport of Light The thermalization of light under conditions of parametric coupling to a bath provides a robust chemical potential for light. We study non-equilibrium transport of light using non-equilibrium Green's function approach under the parametric coupling scheme, and explore a potential photonic analogue to the Landauer transport equation. Our results provide understandings of many-body states of photonic matter with chemical potential imbalances. The transport theory of light paves the way for quantum simulation and even practical applications of diode-like circuits using quantum photonic sources in the microwave and optical domain.

  13. On Nonequilibrium Radiation in Hydrogen Shock Layers

    NASA Technical Reports Server (NTRS)

    Park, Chul

    2005-01-01

    The influence of thermochemical nonequilibrium in the shock layer over a vehicle entering the atmosphere of an outer planet is examined qualitatively. The state of understanding of the heating environment for the Galileo Probe vehicle is first reviewed. Next, the possible reasons for the high recession in the frustum region and the low recession in the stagnation region are examined. The state of understanding of the nonequilibrium in the hydrogen flow is then examined. For the entry flight in Neptune, the possible influence of nonequilibrium is predicted.

  14. 49 CFR 377.209 - Additional charges.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 5 2010-10-01 2010-10-01 false Additional charges. 377.209 Section 377.209... CHARGES Extension of Credit to Shippers by Motor Common Carriers, Water Common Carriers, and Household Goods Freight Forwarders § 377.209 Additional charges. When a carrier— (a) Has collected the amount...

  15. 49 CFR 377.209 - Additional charges.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 5 2011-10-01 2011-10-01 false Additional charges. 377.209 Section 377.209... CHARGES Extension of Credit to Shippers by Motor Common Carriers, Water Common Carriers, and Household Goods Freight Forwarders § 377.209 Additional charges. When a carrier— (a) Has collected the amount...

  16. 47 CFR 69.601 - Exchange carrier association.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Exchange carrier association. 69.601 Section 69...) ACCESS CHARGES Exchange Carrier Association § 69.601 Exchange carrier association. (a) An association... Common Line revenue requirement, pay long term support to association Common Line tariff participants,...

  17. 47 CFR 69.601 - Exchange carrier association.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Exchange carrier association. 69.601 Section 69...) ACCESS CHARGES Exchange Carrier Association § 69.601 Exchange carrier association. (a) An association... Common Line revenue requirement, pay long term support to association Common Line tariff participants,...

  18. 14 CFR 158.65 - Reporting requirements: Collecting air carriers.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... TRANSPORTATION (CONTINUED) AIRPORTS PASSENGER FACILITY CHARGES (PFC'S) Reporting, Recordkeeping and Audits § 158.65 Reporting requirements: Collecting air carriers. (a) Each air carrier collecting PFCs for a public... carrier and airport involved, (ii) The total PFC revenue collected, (iii) The total PFC revenue...

  19. 14 CFR 158.65 - Reporting requirements: Collecting air carriers.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... TRANSPORTATION (CONTINUED) AIRPORTS PASSENGER FACILITY CHARGES (PFC'S) Reporting, Recordkeeping and Audits § 158.65 Reporting requirements: Collecting air carriers. (a) Each air carrier collecting PFCs for a public... carrier and airport involved, (ii) The total PFC revenue collected, (iii) The total PFC revenue...

  20. 14 CFR 158.65 - Reporting requirements: Collecting air carriers.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... TRANSPORTATION (CONTINUED) AIRPORTS PASSENGER FACILITY CHARGES (PFC'S) Reporting, Recordkeeping and Audits § 158.65 Reporting requirements: Collecting air carriers. (a) Each air carrier collecting PFCs for a public... carrier and airport involved, (ii) The total PFC revenue collected, (iii) The total PFC revenue...