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Sample records for nonlinear semiconducting devices

  1. Evidence for bifurcation and universal chaotic behavior in nonlinear semiconducting devices

    SciTech Connect

    Testa, J.; Perez, J.; Jeffries, C.

    1982-01-01

    Bifurcations, chaos, and extensive periodic windows in the chaotic regime are observed for a driven LRC circuit, the capacitive element being a nonlinear varactor diode. Measurements include power spectral analysis; real time amplitude data; phase portraits; and a bifurcation diagram, obtained by sampling methods. The effects of added external noise are studied. These data yield experimental determinations of several of the universal numbers predicted to characterize nonlinear systems having this route to chaos.

  2. Semiconducting compounds and devices incorporating same

    SciTech Connect

    Marks, Tobin J; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2014-06-17

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  3. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2016-01-19

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  4. Bulk semiconducting scintillator device for radiation detection

    DOEpatents

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  5. Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yang, Ligong; Gu, Peifu

    2002-09-01

    Semiconducting ferroelectric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin films were successfully fabricated with the sol-gel process. Ferroelectric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow eneryg gap. The Bohr radius of the SbSI crystal was calculated larger than other semiconductors due to its large dielectric constant. If the crystal size is smaller than its Bohr radius and the microcrystallite are dispersed in a suitable matrix, a dramatic improvement of the nonlinear three-order nonlinearity will be achieved due to the quantum confinement effect. The SbSI quantum dot composites were proved to be good candidates for nonlinear and electro-optical devices. Glycidopropyltrimetroxysilane modified TiO2 was chosen as the matrix and SbSI was synthesized in situ by using SbI3, SC(NH2)2. The materials in thin film were heat-treated in different conditions and the size of the microcrystallite was characterized by the XRD. A value of 3.5pm/V of effective transverse electro-optical coefficient reff for the nano-composite containing 8 wt percent of antimony sulfide iodide was measured. The third-order nonlinear optical susceptibility of the SbSI quantum dot thin film was measured by degenerate four-wave mixing at 532nm using a frequency double Nd:YAG laser beams with a pulse width of around 10ns, the x(3) value of 3 μm sample was measured to be 6 × 10-11 esu.

  6. Exciton Dynamics and Many Body Interactions in Layered Semiconducting Materials Revealed with Non-linear Coherent Spectroscopy

    NASA Astrophysics Data System (ADS)

    Dey, Prasenjit

    Atomically thin, semiconducting transition metal dichalogenides (TMDs), a special class of layered semiconductors, that can be shaped as a perfect two dimensional material, have garnered a lot of attention owing to their fascinating electronic properties which are achievable at the extreme nanoscale. In contrast to graphene, the most celebrated two-dimensional (2D) material thus far; TMDs exhibit a direct band gap in the monolayer regime. The presence of a non-zero bandgap along with the broken inversion symmetry in the monolayer limit brands semiconducting TMDs as the perfect candidate for future optoelectronic and valleytronics-based device application. These remarkable discoveries demand exploration of different materials that possess similar properties alike TMDs. Recently, III-VI layered semiconducting materials (example: InSe, GaSe etc.) have also emerged as potential materials for optical device based applications as, similar to TMDs, they can be shaped into a perfect two-dimensional form as well as possess a sizable band gap in their nano-regime. The perfect 2D character in layered materials cause enhancement of strong Coulomb interaction. As a result, excitons, a coulomb bound quasiparticle made of electron-hole pair, dominate the optical properties near the bandgap. The basis of development for future optoelectronic-based devices requires accurate characterization of the essential properties of excitons. Two fundamental parameters that characterize the quantum dynamics of excitons are: a) the dephasing rate, gamma, which represents the coherence loss due to the interaction of the excitons with their environment (for example- phonons, impurities, other excitons, etc.) and b) excited state population decay rate arising from radiative and non-radiative relaxation processes. The dephasing rate is representative of the time scale over which excitons can be coherently manipulated, therefore accurately probing the source of exciton decoherence is crucial for

  7. Detection of a biexciton in semiconducting carbon nanotubes using nonlinear optical spectroscopy.

    PubMed

    Colombier, L; Selles, J; Rousseau, E; Lauret, J S; Vialla, F; Voisin, C; Cassabois, G

    2012-11-01

    We report the observation of the biexciton in semiconducting single-wall carbon nanotubes by means of nonlinear optical spectroscopy. Our measurements reveal the universal asymmetric line shape of the Fano resonance intrinsic to the biexciton transition. For nanotubes of the (9,7) chirality, we find a biexciton binding energy of 106 meV. From the calculation of the χ((3)) nonlinear response, we provide a quantitative interpretation of our measurements, leading to an estimation of the characteristic Fano factor q of 7 ± 3. This value allows us to extract the first experimental information on the biexciton stability and we obtain a biexciton annihilation rate comparable to the exciton-exciton annihilation one. PMID:23215424

  8. Diphenylpolyynes For Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Stiegman, Albert E.; Perry, Joseph W.; Coulter, Daniel R.

    1989-01-01

    Several diphenylpolyyne compounds found to exhibit second-order nonlinear electric susceptibilities and chemical structures conducive to orientation in appropriate chemical environments. These features make new materials suitable for use in optical devices. Diphenylacetylene links give molecules rodlike characteristics making them amenable to orientation by suspension in liquid crystals. New molecules also have inherent liquid-crystalline properties enabling them to be oriented directly.

  9. High Efficiency Alternating Current Driven Organic Light Emitting Devices Employing Active Semiconducting Gate Layers

    NASA Astrophysics Data System (ADS)

    Smith, Gregory; Xu, Junwei; Carroll, David

    2015-03-01

    In this work, we describe the role of semiconductor-polymer interfaces in alternating current (AC) driven organic electroluminescent (EL) devices. We implement inorganic semiconducting materials between the external contact and the active layers in organic light EL devices. Precise control of capacitance and charge injection is required to realize bright and efficient large area AC driven devices. We show how this architecture results in active gating to the polymer layers, resulting in the novel ability to control the capacitance and charge injection characteristics. We propose a model based on band bending at the semiconductor-polymer interface. Furthermore, we elucidate the influence of the semiconductor-polymer interface on the internally coupled magnetic field generated in an alternating current driven organic light emitting device configuration. Magnetic fields can alter the ratios of singlet and triplet populations, and we show that internal generation of a magnetic field can dramatically alter the efficiency of light emission in organic EL devices.

  10. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2014-02-25

    With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development. PMID:24476095

  11. Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: gold nanoparticles.

    PubMed

    Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

    2013-12-26

    We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0-9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ~41 V operated at ± 30 V and memory ratio of ~1 × 10(3) maintained for 1 × 10(4) s. The experimental results suggest that the hybrid materials of the functionalized Au NPs in F8T2 matrix have the potential applications for low voltage-driven high performance nonvolatile memory devices. PMID:24224739

  12. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  13. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices

    NASA Astrophysics Data System (ADS)

    Ma, Yuqiang; Liu, Bilu; Zhang, Anyi; Chen, Liang; Fathi, Mohammad; Shen, Chenfei; Abbas, Ahmad; Ge, Mingyuan; Mecklenburg, Matthew; Zhou, Chongwu; Usc Nanolab Team

    Two-dimensional (2D) semiconducting monolayer transition metal dichalcogenides (TMDCs) have stimulated lots of interest because they are direct bandgap materials that have reasonably good mobility values. However, contact between most metals and semiconducting TMDCs like 2H phase WSe2 is highly resistive, thus degrading the performance of field effect transistors (FETs) fabricated with WSe2 as active channel materials. We applied a phase engineering method to chemical vapor deposition (CVD) grown monolayer 2H-WSe2 and demonstrated semiconducting-to-metallic phase transition in atomically thin WSe2. We have also shown that metallic phase WSe2 can be converted back to semiconducting phase, demonstrating the reversibility of this phase transition. In addition, we fabricated FETs based on these CVD-grown WSe2 flakes with phase-engineered metallic 1T-WSe2 as contact regions and intact semiconducting 2H-WSe2 as active channel materials. The device performance is substantially improved with metallic phase source/drain electrodes, showing on/off current ratios of 107 and mobilities up to 66 cm2/Vs for monolayer WSe2. PI name: Chongwu Zhou.

  14. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

    NASA Astrophysics Data System (ADS)

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-01

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/-2 V) and subthreshold swing (SS) (122-161 mV dec-1), high effective mobility (up to 17.6-37.7 cm2 V-1 s-1) and high on/off ratio (104-107). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge

  15. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption. PMID:26847814

  16. Thermodynamically valid noise models for nonlinear devices

    NASA Astrophysics Data System (ADS)

    Coram, Geoffrey J.

    2000-11-01

    Noise has been a concern from the very beginning of signal processing and electrical engineering in general, although it was perhaps of less interest until vacuum- tube amplifiers made it audible just after 1900. Rigorous noise models for linear resistors were developed in 1927 by Nyquist and Johnson [1, 2]. However, the intervening years have not brought similarly well-established models for noise in nonlinear devices. This thesis proposes using thermodynamic principles to determine whether a given nonlinear device noise model is physically valid. These tests are applied to several models. One conclusion is that the standard Gaussian noise models for nonlinear devices predict thermodynamically impossible circuit behavior: these models should be abandoned. But the nonlinear shot-noise model predicts thermodynamically acceptable behavior under a constraint derived here. This thesis shows how the thermodynamic requirements can be reduced to concise mathematical tests, involving no approximations, for the Gaussian and shot-noise models. When the above-mentioned constraint is satisfied, the nonlinear shot-noise model specifies the current noise amplitude at each operating point from knowledge of the device v - i curve alone. This relation between the dissipative behavior and the noise fluctuations is called, naturally enough, a fluctuation- dissipation relation. This thesis further investigates such FDRs, including one for linear resistors in nonlinear circuits that was previously unexplored. The aim of this thesis is to provide thermodynamically solid foundations for noise models. It is hoped that hypothesized noise models developed to match experiment will be validated against the concise mathematical tests of this thesis. Finding a correct noise model will help circuit designers and physicists understand the actual processes causing the noise, and perhaps help them minimize the noise or its effect in the circuit. (Copies available exclusively from MIT Libraries, Rm

  17. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices

    NASA Astrophysics Data System (ADS)

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ opt/σ dc = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I on/I off ratios from 10-19 800 and electron mobility values μ e = 0.3-78.8 cm2 (V-s)-1, hole mobility values μ h = 0.4-287 cm2 (V-s)-1. High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ dc/σ opt values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  18. Nonlinear Ballistic Transport in Graphene Devices

    NASA Astrophysics Data System (ADS)

    Farrokhi, M. Javad; Boland, Mathias; Nasseri, Mohsen; Strachan, Douglas

    Through the extreme size scaling of electronic devices, there is great potential to achieve highly efficient and ultrafast electronics. By scaling down the channel length in graphene transistors to the point where the mean free path exceeds the relevant channel length, the electron transport can transition from a diffusive regime to an intrinsic ballistic regime. In such a regime, both quantum tunneling at the electrode-channel interface and the screening length, as determined by electrode-channel barrier width, can have a strong effect on current nonlinearity and asymmetric gate response. Here we discuss our experimental results on nangap electrodes to graphene channels that show quantitative agreement with an intrinsic ballistic model. Moreover, this behavior persists to room temperature and on standard oxide substrates, providing strong evidence for a new regime of nonlinearity in graphene devices that could be of potential use for electronic applications.

  19. Non-Linear Raman Scattering from Semiconducting GaP Nanowires

    NASA Astrophysics Data System (ADS)

    Gupta, A.; Wu, Jian; Eklund, P. C.

    2008-03-01

    Results of polarized micro-Raman scattering from LO and TO phonons in individual GaP nanowires (NWs) with different diameter and length are reported. The NW diameters were determined by Atomic Force Microscope (AFM) and length was measured by Scanning Electron Microscope (SEM). NWs with the same growth direction but variable length were prepared by cutting ˜40 μm long wires into segments using a Focused Ion Beam. The polar plots of the back scattered intensity ITO,LO(θ) from these segments were collected, where θ is the angle between the incident electric field and the NW axis. Interestingly, the shapes of these polar patterns depend on both the length and diameter of the NWs. The Raman scattering intensities for short wires (i.e., L<1μm) also exhibit a non-linear dependence on the incident laser power I0. The non-linearity increases with decreasing NW length and behaves as ˜I0^1.5 for the shortest wires measured so far (i.e., L˜500 nm). Our results strong suggest strong enhancement in the internal electric field via antenna effects. This work is supported by NSF NIRT, grant DMR-0304178.

  20. Non-Linear Electrohydrodynamics in Microfluidic Devices

    PubMed Central

    Zeng, Jun

    2011-01-01

    Since the inception of microfluidics, the electric force has been exploited as one of the leading mechanisms for driving and controlling the movement of the operating fluid and the charged suspensions. Electric force has an intrinsic advantage in miniaturized devices. Because the electrodes are placed over a small distance, from sub-millimeter to a few microns, a very high electric field is easy to obtain. The electric force can be highly localized as its strength rapidly decays away from the peak. This makes the electric force an ideal candidate for precise spatial control. The geometry and placement of the electrodes can be used to design electric fields of varying distributions, which can be readily realized by Micro-Electro-Mechanical Systems (MEMS) fabrication methods. In this paper, we examine several electrically driven liquid handling operations. The emphasis is given to non-linear electrohydrodynamic effects. We discuss the theoretical treatment and related numerical methods. Modeling and simulations are used to unveil the associated electrohydrodynamic phenomena. The modeling based investigation is interwoven with examples of microfluidic devices to illustrate the applications. PMID:21673912

  1. Non-linear electrohydrodynamics in microfluidic devices.

    PubMed

    Zeng, Jun

    2011-01-01

    Since the inception of microfluidics, the electric force has been exploited as one of the leading mechanisms for driving and controlling the movement of the operating fluid and the charged suspensions. Electric force has an intrinsic advantage in miniaturized devices. Because the electrodes are placed over a small distance, from sub-millimeter to a few microns, a very high electric field is easy to obtain. The electric force can be highly localized as its strength rapidly decays away from the peak. This makes the electric force an ideal candidate for precise spatial control. The geometry and placement of the electrodes can be used to design electric fields of varying distributions, which can be readily realized by Micro-Electro-Mechanical Systems (MEMS) fabrication methods. In this paper, we examine several electrically driven liquid handling operations. The emphasis is given to non-linear electrohydrodynamic effects. We discuss the theoretical treatment and related numerical methods. Modeling and simulations are used to unveil the associated electrohydrodynamic phenomena. The modeling based investigation is interwoven with examples of microfluidic devices to illustrate the applications. PMID:21673912

  2. Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Ji-Seon; Friend, Richard H.; Grizzi, Ilaria; Burroughes, Jeremy H.

    2005-07-01

    We report that adding a thin (˜10nm) semiconducting polymer interlayer between apoly(styrenesulphonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT:PSS) hole transporter and an emissive semiconductor significantly improves the device efficiency of polymer light-emitting diodes (LEDs). With the interlayer, the external quantum efficiency (EQE) increases from 0.7%(0.4cd/A at 3.7V) to 1.9% (1.0cd/A at 3.3V) at 100cd/m2 for red LEDs and from 1.9%(6.2cd/A at 3.4V) to 3.0% (10.1cd/A at 3.0V) at 1000cd/m2 for green LEDs. An EQE of 4.0% is also observed in blue LEDs (35% increase). The interlayer is spin-coated directly on top of the PEDT:PSS layer from a poly(2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-sec-butylphenyl)imino)-1,4-phenylene)) (TFB) solution. This interlayer prevents significant quenching of radiative excitons at the PEDT:PSS interface by acting as an efficient exciton blocking layer.

  3. Final Report for DE-FG36-08GO18007 "All-Inorganic, Efficient Photovoltaic Solid State Devices Utilizing Semiconducting Colloidal Nanocrystal Quantum Dots"

    SciTech Connect

    Vladimir Bulovic and Moungi Bawendi

    2011-09-30

    We demonstrated robust colloidal quantum dot (QD) photovoltaics with high internal quantum efficiencies. In our structures, device durability is derived from use of all-inorganic atmospherically-stable semiconducting metal-oxide films together with QD photoreceptors. We have shown that both QD and metal-oxide semiconducting films and contacts are amenable to room temperature processing under minimal vacuum conditions, enabling large area processing of PV structures of high internal efficiency. We generated the state of the art devices with power conversion efficiency of more than 4%, and have shown that efficiencies as high as 9% are achievable in the near-term, and as high as 17% in the long-term.

  4. High-performance polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side chains.

    PubMed

    Png, Rui-Qi; Chia, Perq-Jon; Tang, Jie-Cong; Liu, Bo; Sivaramakrishnan, Sankaran; Zhou, Mi; Khong, Siong-Hee; Chan, Hardy S O; Burroughes, Jeremy H; Chua, Lay-Lay; Friend, Richard H; Ho, Peter K H

    2010-02-01

    Heterostructures are central to the efficient manipulation of charge carriers, excitons and photons for high-performance semiconductor devices. Although these can be formed by stepwise evaporation of molecular semiconductors, they are a considerable challenge for polymers owing to re-dissolution of the underlying layers. Here we demonstrate a simple and versatile photocrosslinking methodology based on sterically hindered bis(fluorophenyl azide)s. The photocrosslinking efficiency is high and dominated by alkyl side-chain insertion reactions, which do not degrade semiconductor properties. We demonstrate two new back-infiltrated and contiguous interpenetrating donor-acceptor heterostructures for photovoltaic applications that inherently overcome internal recombination losses by ensuring path continuity to give high carrier-collection efficiency. This provides the appropriate morphology for high-efficiency polymer-based photovoltaics. We also demonstrate photopatternable polymer-based field-effect transistors and light-emitting diodes, and highly efficient separate-confinement-heterostructure light-emitting diodes. These results open the way to the general development of high-performance polymer semiconductor heterostructures that have not previously been thought possible. PMID:19966791

  5. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  6. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  7. Nonlinear electrical properties of Si three-terminal junction devices

    NASA Astrophysics Data System (ADS)

    Meng, Fantao; Sun, Jie; Graczyk, Mariusz; Zhang, Kailiang; Prunnila, Mika; Ahopelto, Jouni; Shi, Peixiong; Chu, Jinkui; Maximov, Ivan; Xu, H. Q.

    2010-12-01

    This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

  8. Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

    PubMed Central

    Zhang, Wen-Ming; Meng, Guang; Chen, Di

    2007-01-01

    Electrostatic micro-electro-mechanical system (MEMS) is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

  9. Hole-selective and impedance characteristics of an aqueous solution-processable MoO3 layer for solution-processable organic semiconducting devices

    NASA Astrophysics Data System (ADS)

    Moon, Byung Seuk; Lee, Soo-Hyoung; Huh, Yoon Ho; Park, Byoungchoo

    2015-02-01

    We herein report an investigation of aqueous solution-processable molybdenum-oxide (MoO3) hole-selective layers fabricated for solution-processable organic semiconducting devices. A homogeneous MoO3 layer was successfully deposited via spin-coating using aqueous solutions of ammonium heptamolybdate as a MoO3 precursor. The use of the solution-processable MoO3 layer as a hole-injecting layer (HIL) on an indium-tin-oxide (ITO) anode in solution-processable organic light-emitting diodes (OLEDs) resulted in excellent device performance in terms of the brightness (maximum brightness of 37,000 cd m-2) and the efficiency (peak efficiency of 25.2 cd A-1), comparable to or better than those of a reference OLED with a conventional poly(ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. Such good device performance is attributed to the water-processable MoO3 hole-selective layers, which allowed the formation of a high-quality film and provided good matching of the energy levels between adjacent layers with improved hole-injecting properties, impedance characteristics, and stability. Furthermore, polymer solar cells (PSCs) with a MoO3 layer used as a hole-collecting layer (HCL) showed improved power conversion efficiency (3.81%), which was higher than that obtained using the PEDOT:PSS HCL. These results clearly indicate the benefits of using a water-processable MoO3 layer, which effectively acts as a hole-selective layer on an ITO anode and provides good hole-injection/collection, electron-blocking and energy-level-matching properties, and improved stability. They, therefore, offer considerable promise as an alternative to a conventional PEDOT:PSS layer in the production of high-performance solution-processable organic semiconducting devices.

  10. Semiconductor Nonlinear Waveguide Devices and Integrated-Mirror Etalons

    NASA Astrophysics Data System (ADS)

    Chuang, Chih-Li.

    This dissertation investigates different III-V semiconductor devices for applications in nonlinear photonics. These include passive and active nonlinear directional couplers, current-controlled optical phase shifter, and integrated -mirror etalons. A novel method to find the propagation constants of an optical waveguide is introduced. The same method is applied, with minor modifications, to find the coupling length of a directional coupler. The method presented provides a tool for the design of optical waveguide devices. The design, fabrication, and performance of a nonlinear directional coupler are presented. This device uses light intensity to control the direction of light coming out. This is achieved through photo-generated-carriers mechanism in the picosecond regime and through the optical Stark effect in the femtosecond regime. A two-transverse -dimensions beam-propagation computation is used to model the switching behavior in the nonlinear directional coupler. It is found that, by considering the pulse degradation effect, the computation agrees well with experiments. The possibility of operating a nonlinear directional coupler with gain is investigated. It is concluded that by injecting current into the nonlinear directional coupler does not provide the advantages hoped for and the modelling using 2-D beam -propagation methods verifies that. Using current injection to change the refractive index of a waveguide, an optical phase shifter is constructed. This device has the merit of delivering large phase shift with almost no intensity modulation. A phase shift as large as 3pi is produced in a waveguide 400 μm in length. Finally, a new structure, grown by the molecular beam epitaxy machine, is described. The structure consists of two quarter-wave stacks and a spacer layer to form an integrated-mirror etalon. The theory, design principles, spectral analyses are discussed with design examples to clarify the ideas. Emphasis is given to the vertical-cavity surface

  11. Nonlinear optimization of acoustic energy harvesting using piezoelectric devices.

    PubMed

    Lallart, Mickaeël; Guyomar, Daniel; Richard, Claude; Petit, Lionel

    2010-11-01

    In the first part of the paper, a single degree-of-freedom model of a vibrating membrane with piezoelectric inserts is introduced and is initially applied to the case when a plane wave is incident with frequency close to one of the resonance frequencies. The model is a prototype of a device which converts ambient acoustical energy to electrical energy with the use of piezoelectric devices. The paper then proposes an enhancement of the energy harvesting process using a nonlinear processing of the output voltage of piezoelectric actuators, and suggests that this improves the energy conversion and reduces the sensitivity to frequency drifts. A theoretical discussion is given for the electrical power that can be expected making use of various models. This and supporting experimental results suggest that a nonlinear optimization approach allows a gain of up to 10 in harvested energy and a doubling of the bandwidth. A model is introduced in the latter part of the paper for predicting the behavior of the energy-harvesting device with changes in acoustic frequency, this model taking into account the damping effect and the frequency changes introduced by the nonlinear processes in the device. PMID:21110569

  12. Carbon Nanotube Passive Intermodulation Device for Nonlinear Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Lerner, Mitchell; Perez, Israel; Rockway, John

    2014-03-01

    The navy is interested in designing RF front-ends for receivers to handle high power jammers and other strong interferers. Instead of blocking that energy or dissipating it as heat in filters or amplifiers, this project investigates re-directing that energy for harvesting and storage. The approach is based on channelizing a high power jamming signal into a passive intermodulation device to create intermodulation products in sub-band frequencies, which could then be harvested for energy. The intermodulation device is fabricated using carbon nanotube transistors and such devices can be modified by creating chemical defects in the sidewalls of the nanotubes and locally gating the devices with a slowly varying electric field. These effects controllably enhance the hysteretic non-linearity in the transistors IV behavior. Combining these components with a RF energy harvester on the back-end should optimize the re-use of inbound jamming energy while maximizing the utility of standard back end radio components.

  13. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices. PMID:19076042

  14. Integrated optical devices using bacteriorhodopsin as active nonlinear optical material

    NASA Astrophysics Data System (ADS)

    Dér, András; Fábián, László; Valkai, Sándor; Wolff, Elmar; Ramsden, Jeremy; Ormos, Pál

    2006-08-01

    Coupling of optical data-processing devices with microelectronics, telecocommunication and sensory functions, is among the biggest challenges in molecular electronics. Intensive research is going on to find suitable nonlinear optical materials that could meet the demanding requirements of optoelectronic applications, especially regarding high sensitivity and stability. In addition to inorganic and organic crystals, biological molecules have also been considered for use in integrated optics, among which the bacterial chromoprotein, bacteriorhodopsin (bR) generated the most interest. bR undergoes enormous absorption and concomitant refractive index changes upon initiation of a cyclic series of photoreactions by a burst of actinic light. This effect can be exploited to create highly versatile all-optical logical elements. We demonstrate the potential of this approach by investigating the static and dynamic response of several basic elements of integrated optical devices. Our results show that, due to its relatively high refractive index changes, bR can be used as an active nonlinear optical material to produce a variety of integrated optical switching and modulation effects.

  15. Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices.

    PubMed

    Li, Huaping; Liu, Hongyu; Tang, Yifan; Guo, Wenmin; Zhou, Lili; Smolinski, Nina

    2016-08-17

    Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in large scale showing the characteristics of fA off current and ION/IOFF ratio of >1 × 10(8). CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52. PMID:27487382

  16. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, R.

    1994-08-09

    A non-linear optical crystal vibration sensing device including a photorefractive crystal and a laser is disclosed. The laser produces a coherent light beam which is split by a beam splitter into a first laser beam and a second laser beam. After passing through the crystal the first laser beam is counter-propagated back upon itself by a retro-mirror, creating a third laser beam. The laser beams are modulated, due to the mixing effect within the crystal by vibration of the crystal. In the third laser beam, modulation is stable and such modulation is converted by a photodetector into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal. 3 figs.

  17. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, Ralph

    1994-01-11

    A non-linear optical crystal vibration sensing device (10) including a photorefractive crystal (26) and a laser (12). The laser (12 ) produces a coherent light beam (14) which is split by a beam splitter (18) into a first laser beam (20) and a second laser beam (22). After passing through the crystal (26) the first laser beam (20) is counter-propagated back upon itself by a retro-mirror (32), creating a third laser beam (30). The laser beams (20, 22, 30) are modulated, due to the mixing effect within the crystal (26) by vibration of the crystal (30). In the third laser beam (30), modulation is stable and such modulation is converted by a photodetector (34) into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal (26).

  18. Nonlinear dynamics in a microfluidic loop device: Chaos and Fractals

    NASA Astrophysics Data System (ADS)

    Maddala, Jeevan; Rengaswamy, Raghunathan

    2012-11-01

    Discrete decision making and resistive interactions between droplets in a microfluidic loop device induces fascinating nonlinear dynamics such as multi-stability and period doubling. Droplets entering the device at fixed time intervals can exit at different periods or chaotically. One of the periodic behaviors that is observed in a loop is the three-period behavior; this is consistent with the notion that three period behavior implies chaos. Switching between these different dynamical regimes is achieved by changing the inlet droplet feeding frequency. Chaotic behavior is observed between islands of periodic behavior. We show through simulations and experimental observations that the transitions between periods are indeed chaotic. Network model is used to study the dynamic behavior for different inlet feeding frequencies resulting in the development of a bifurcation map. The bifurcation map shows that the three period dynamics is preceded by chaos. A Lyapunov exponent is used to further validate these results. The exit droplet spacing shows several fascinating patterns when the model is simulated for a large number of droplets in the chaotic regime. One such chaotic regime produces a fractal that has a boundary of cardioid. The correlation dimension for a fractal pattern produced by this particular loop system is calculated to be 0.7.

  19. Nonlinear parametric amplification in a triport nanoelectromechanical device

    NASA Astrophysics Data System (ADS)

    Collin, E.; Moutonet, T.; Heron, J.-S.; Bourgeois, O.; Bunkov, Yu. M.; Godfrin, H.

    2011-08-01

    We report on measurements performed at low temperatures on a nanoelectromechanical system (NEMS) under (capacitive) parametric pumping. The excitations and detection schemes are purely electrical and, in the present experiment, enable the straightforward measurement of forces down to about a femtonewton, for displacements of an angström, using standard room-temperature electronics. We demonstrate that a small (linear) force applied on the device can be amplified up to more than a 100 times, while the system is truly moving. We explore the dynamics up to about 50-nm deflections for cantilevers about 200 nm thick and 3 μm long, oscillating at a frequency of 7 MHz. We present a generic modeling of nonlinear parametric amplification and give analytic theoretical solutions enabling the fit of experimental results. We finally discuss the practical limits of the technique, with a particular application: the measurement of anelastic damping in the metallic coating of the device, with an exceptional resolution of about 0.5%.

  20. An experimental nonlinear low dynamic stiffness device for shock isolation

    NASA Astrophysics Data System (ADS)

    Francisco Ledezma-Ramirez, Diego; Ferguson, Neil S.; Brennan, Michael J.; Tang, Bin

    2015-07-01

    The problem of shock generated vibration is very common in practice and difficult to isolate due to the high levels of excitation involved and its transient nature. If not properly isolated it could lead to large transmitted forces and displacements. Typically, classical shock isolation relies on the use of passive stiffness elements to absorb energy by deformation and some damping mechanism to dissipate residual vibration. The approach of using nonlinear stiffness elements is explored in this paper, focusing in providing an isolation system with low dynamic stiffness. The possibilities of using such a configuration for a shock mount are studied experimentally following previous theoretical models. The model studied considers electromagnets and permanent magnets in order to obtain nonlinear stiffness forces using different voltage configurations. It is found that the stiffness nonlinearities could be advantageous in improving shock isolation in terms of absolute displacement and acceleration response when compared with linear elastic elements.

  1. Surface physics of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Amato, Michele; Rurali, Riccardo

    2016-02-01

    Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

  2. All-optical logic devices with cascaded nonlinear couplers.

    PubMed

    Wang, Y; Wang, Z H; Bialkowski, M E

    2000-08-10

    The switching behaviors of cascaded nonlinear couplers were investigated. They have nearly ideal digital-switching characteristics, and their output power levels can be adjusted by means of varying the nonlinear coupling coefficient of the final coupler. The two-input excitation nonlinear cascaded couplers can perform not only switching operations but also a series of logic operations. The logic operations depend mainly on the coupling length of the two-input coupler and its initial inputs. The power corresponding to the rising and falling ridge of the logic operating waveforms can be shifted effectively by means of varying the switching power of the reshaper. Allowable ranges of three important parameters--coupling length of the two-input coupler L(1), bias optical power P(bia), and phase difference psi between the signal and bias beams for six fundamental logic operations--were calculated. Curves for design considerations and suggestions for the best choice of parameters for stable and reliable logic operations and, or, xor, nand, nor, and nxor are also presented individually. PMID:18349996

  3. TEM-nanoindentation studies of semiconducting structures.

    PubMed

    Le Bourhis, E; Patriarche, G

    2007-01-01

    This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process. PMID:16901706

  4. High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    2001-01-01

    Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  5. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    1999-01-01

    Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  6. Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices

    PubMed Central

    Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

    2015-01-01

    Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices. PMID:27547081

  7. Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    NASA Technical Reports Server (NTRS)

    Wang, Zhong L. (Inventor); Wang, Xudong (Inventor); Song, Jinhui (Inventor); Zhou, Jun (Inventor); He, Jr-Hau (Inventor)

    2011-01-01

    A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.

  8. Silicon Photonics Research in Hong Kong: Microresonator Devices and Optical Nonlinearities

    NASA Astrophysics Data System (ADS)

    Poon, Andrew W.; Zhou, Linjie; Xu, Fang; Li, Chao; Chen, Hui; Liang, Tak-Keung; Liu, Yang; Tsang, Hon K.

    In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas-microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

  9. Solar cells composed of semiconductive materials

    SciTech Connect

    Hezel, R.

    1981-03-03

    A solar cell is composed of a semiconductive material having an active zone in which charge carriers are produced by photons which strike and penetrate into the solar cell. The cell is comprised of a semiconductive body having an electrically insulating laminate with metal contacts therein positioned on the semiconductor body in the active zone thereof. The insulating laminate is composed of a double layer of insulating material, with the layer in direct contact with the semiconductive surface being composed of SiO2 which is either natural or is produced at temperatures below 800/sup 0/ C. And the layer superimposed above the SiO2 layer being composed of a different insulating material, such as plasma-produced Si3N4. In certain embodiments of the invention, a whole-area pn-junction is provided parallel to the semiconductive surface. The solar cells of the invention exhibit a higher degree of efficiency due to a higher fixed interface charged density, and low surface recombination velocity, an increased UV sensitivity, improved surface protection and passivation and improved anti-reflection characteristics relative to prior art solar cell devices.

  10. Growth of bulk single crystals of organic materials for nonlinear optical devices - An overview

    NASA Technical Reports Server (NTRS)

    Penn, Benjamin G.; Cardelino, Beatriz H.; Moore, Craig E.; Shields, Angela W.; Frazier, D. O.

    1991-01-01

    Highly perfect single crystals of nonlinear optical organic materials are required for use in optical devices. An overview of the bulk crystal growth of these materials by melt, vapor, and solution processes is presented. Additionally, methods that may be used to purify starting materials, detect impurities at low levels, screen materials for crystal growth, and process grown crystals are discussed.

  11. Non-linear control of the ''clam'' wave energy device. Final report

    SciTech Connect

    Not Available

    1983-09-01

    A promising wave energy device being currently investigated is the ''clam'' device. The clam extracts energy by pumping air through a specially designed (Wells) turbine. Although operation of the Wells turbine does not require a rectified air flow, some additional control will be necessary to optimize the phase of the clam motion for good efficiencies. An examination of the equation of motion in the time domain suggests the possibility of non-linear phase control by mechanical, power take-off, or pneumatic latching. Latching can be shown to increase the efficiency of the device in the longer wavelengths of the wave spectrum, i.e. those of high incident wave power.

  12. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

    PubMed

    Cai, Ronggang; Kassa, Hailu G; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H; Ruzié, Christian; van Breemen, Albert J J M; Gelinck, Gerwin H; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M

    2016-03-21

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices. PMID:26927694

  13. Nonlinear time dependence of dark current in charge-coupled devices

    NASA Astrophysics Data System (ADS)

    Dunlap, Justin C.; Bodegom, Erik; Widenhorn, Ralf

    2011-03-01

    It is generally assumed that charge-coupled device (CCD) imagers produce a linear response of dark current versus exposure time except near saturation. We found a large number of pixels with nonlinear dark current response to exposure time to be present in two scientific CCD imagers. These pixels are found to exhibit distinguishable behavior with other analogous pixels and therefore can be characterized in groupings. Data from two Kodak CCD sensors are presented for exposure times from a few seconds up to two hours. Linear behavior is traditionally taken for granted when carrying out dark current correction and as a result, pixels with nonlinear behavior will be corrected inaccurately.

  14. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  15. Simultaneous correction of flat field and nonlinearity response of intensified charge-coupled devices

    NASA Astrophysics Data System (ADS)

    Williams, Timothy C.; Shaddix, Christopher R.

    2007-12-01

    Intensified charge-coupled devices (ICCDs) are used extensively in many scientific and engineering environments to image weak or temporally short optical events. Care has to be taken in interpreting the images from ICCDs if quantitative results are required. In particular, nonuniform gain (flat field) and nonlinear response effects must be properly accounted for. Traditional flat-field corrections can only be applied in the linear regime of the ICCD camera, which limits the usable dynamic range. This paper reports a more general approach to image correction whereby the nonlinear gain response of each pixel of the ICCD is characterized over the full dynamic range of the camera. Image data can then be corrected for the combined effects of nonuniform gain and nonlinearity. The results from a two-color pyrometry measurement of soot field temperature are used to illustrate the capabilities of the new correction approach.

  16. Modified Hyperspheres Algorithm to Trace Homotopy Curves of Nonlinear Circuits Composed by Piecewise Linear Modelled Devices

    PubMed Central

    Vazquez-Leal, H.; Jimenez-Fernandez, V. M.; Benhammouda, B.; Filobello-Nino, U.; Sarmiento-Reyes, A.; Ramirez-Pinero, A.; Marin-Hernandez, A.; Huerta-Chua, J.

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation. PMID:25184157

  17. Nonlinear electronic transport in nanoscopic devices: nonequilibrium Green's functions versus scattering approach

    NASA Astrophysics Data System (ADS)

    Hernández, Alexis R.; Lewenkopf, Caio H.

    2013-04-01

    We study the nonlinear elastic quantum electronic transport properties of nanoscopic devices using the nonequilibrium Green's function (NEGF) method. The Green's function method allows us to expand the I- V characteristics of a given device to arbitrary powers of the applied voltages. By doing so, we are able to relate the NEGF method to the scattering approach, showing their similarities and differences and calculate the conductance coefficients to arbitrary order. We demonstrate that the electronic current given by NEGF is gauge invariant to all orders in powers of V, and discuss the requirements for gauge invariance in the standard density functional theory (DFT) implementations in molecular electronics. We also analyze the symmetries of the nonlinear conductance coefficients with respect to a magnetic field inversion and the violation of the Onsager reciprocity relations with increasing source-drain bias.

  18. Modified hyperspheres algorithm to trace homotopy curves of nonlinear circuits composed by piecewise linear modelled devices.

    PubMed

    Vazquez-Leal, H; Jimenez-Fernandez, V M; Benhammouda, B; Filobello-Nino, U; Sarmiento-Reyes, A; Ramirez-Pinero, A; Marin-Hernandez, A; Huerta-Chua, J

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation. PMID:25184157

  19. Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs.

    PubMed

    Qu, Liangti; Du, Feng; Dai, Liming

    2008-09-01

    We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation. PMID:18665651

  20. Tunable strong nonlinearity of a micromechanical beam embedded in a dc-superconducting quantum interference device

    SciTech Connect

    Ella, Lior Yuvaraj, D.; Suchoi, Oren; Shtempluk, Oleg; Buks, Eyal

    2015-01-07

    We present a study of the controllable nonlinear dynamics of a micromechanical beam coupled to a dc-SQUID (superconducting quantum interference device). The coupling between these systems places the modes of the beam in a highly nonlinear potential, whose shape can be altered by varying the bias current and applied flux of the SQUID. We detect the position of the beam by placing it in an optical cavity, which sets free the SQUID to be used solely for actuation. This enables us to probe the previously unexplored full parameter space of this device. We measure the frequency response of the beam and find that it displays a Duffing oscillator behavior which is periodic in the applied magnetic flux. To account for this, we develop a model based on the standard theory for SQUID dynamics. In addition, with the aim of understanding if the device can reach nonlinearity at the single phonon level, we use this model to show that the responsivity of the current circulating in the SQUID to the position of the beam can become divergent, with its magnitude limited only by noise. This suggests a direction for the generation of macroscopically distinguishable superposition states of the beam.

  1. Tunable strong nonlinearity of a micromechanical beam embedded in a dc-superconducting quantum interference device

    NASA Astrophysics Data System (ADS)

    Ella, Lior; Yuvaraj, D.; Suchoi, Oren; Shtempluk, Oleg; Buks, Eyal

    2015-01-01

    We present a study of the controllable nonlinear dynamics of a micromechanical beam coupled to a dc-SQUID (superconducting quantum interference device). The coupling between these systems places the modes of the beam in a highly nonlinear potential, whose shape can be altered by varying the bias current and applied flux of the SQUID. We detect the position of the beam by placing it in an optical cavity, which sets free the SQUID to be used solely for actuation. This enables us to probe the previously unexplored full parameter space of this device. We measure the frequency response of the beam and find that it displays a Duffing oscillator behavior which is periodic in the applied magnetic flux. To account for this, we develop a model based on the standard theory for SQUID dynamics. In addition, with the aim of understanding if the device can reach nonlinearity at the single phonon level, we use this model to show that the responsivity of the current circulating in the SQUID to the position of the beam can become divergent, with its magnitude limited only by noise. This suggests a direction for the generation of macroscopically distinguishable superposition states of the beam.

  2. All-optical devices based on carrier nonlinearities for optical filtering and spectral equalization

    NASA Astrophysics Data System (ADS)

    Burger, Johan Petrus

    InGaAsP-based quantum wells can display nonlinear refractive index changes of ~0.1 near the band-edge for intrawell carrier density changes of 1 × 1018cm-3, due to effects like bandfilling and the plasma effect, which make these materials promising for the realization of all-optical signal processing devices, as demonstrated here. A novel single passband filter with sub-gigahertz bandwidth and greater than 40nm of tunability was experimentally demonstrated. The filter uses the detuning characteristics of nearly degenerate four-wave mixing in a broad area semiconductor optical amplifier to obtain frequency selectivity. The key to this demonstration was the spatial separation of the filtered signal from the input signal, based on their different propagation directions. An analysis of an analogous integrated optic dual-order mode nonlinear mode-converter, with integrated mode sorters which separate the signal from the interacting modes, was also undertaken. This device is promising as a filter, a wavelength converter, notch filter, and a wavelength recognizing switch. Novel ways to prevent carrier diffusion, which washes out the nonlinear grating, were suggested. It is important to have a large mutual overlap to modal overlap ratio of the two interacting modes on the nonlinear medium, because the mixing efficiency scales as the fourth power of this number. Three types of integrated optic limiters (based on Kerr- like nonlinearities) namely an all-optical cutoff modulator, a nonlinear Y-branch and an interferometer with an internal Kerr element, were theoretically investigated. A beam propagation program, which can solve the propagation of an optical field in a semiconductor in the presence of carrier diffusion, was developed for the numerical analysis of these structures. A negative feedback mechanism was identified in the Y-branch devices and a new limiting configuration was discovered in a Y- branch with a selectively placed defocusing nonlinearity. Dichroic

  3. A Compact Combinatorial Device for Measurement of Nonlinearity of Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Saunders, P.; White, D. R.; Edgar, H.

    2015-03-01

    A new compact computer-controlled device using a combinatorial technique for measuring the nonlinearity of radiation detectors is described. The device consists of two sets of four beam-splitter cubes optically cemented together and arranged so that radiation from a single source is split into four separate paths, then recombined after passing through one of five neutral density filters placed in each path. This allows for the measurement of 625 approximately equi-spaced inter-related flux levels based on only 16 unknown transmittance values. These can be solved for by least-squares fitting, leaving 609 degrees of freedom remaining to determine the nonlinearity of the detector. A novel aspect of the design is the use of neutral density glass plates optically cemented along all the external faces of the beam-splitter cubes, which act as beam dumps for any reflected or scattered radiation. The cube faces in the desired beam paths have clear glass plates with an anti-reflection coating applied at the wavelength of interest optically cemented to them. Operation at other wavelengths is achieved by simply replacing these plates with plates coated for the new wavelength. The performance of the device has been tested using a silicon photodiode with a collimated 650 nm LED as the source. The results demonstrate that the device is able to measure linearity to better than 1 part in.

  4. Electronic structure and optical property of boron doped semiconducting graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Shao, Qingyi; Wang, Li; Deng, Feng

    2011-08-01

    We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C-B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nanoribbons gets lower than that of intrinsic semiconducting graphene nanoribbons. Our results also show that the boron doped semiconducting graphene nanoribbons behave as p-type semiconducting and that the absorption coefficient of boron doped armchair graphene nanoribbons is generally enhanced between 2.0 eV and 3.3 eV. Therefore, our results have a great significance in developing nano-material for fabricating the nano-photovoltaic devices.

  5. Nonlinear Optimization-Based Device-Free Localization with Outlier Link Rejection

    PubMed Central

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-01-01

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach. PMID:25853406

  6. Nonlinear optimization-based device-free localization with outlier link rejection.

    PubMed

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-01-01

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach. PMID:25853406

  7. Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

    NASA Astrophysics Data System (ADS)

    Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2016-08-01

    Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

  8. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  9. Step-response of a torsional device with multiple discontinuous non-linearities: Formulation of a vibratory experiment

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Dreyer, Jason T.; Singh, Rajendra

    2016-03-01

    A vehicle clutch damper is intentionally designed to contain multiple discontinuous non-linearities, such as multi-staged springs, clearances, pre-loads, and multi-staged friction elements. The main purpose of this practical torsional device is to transmit a wide range of torque while isolating torsional vibration between an engine and transmission. Improved understanding of the dynamic behavior of the device could be facilitated by laboratory measurement, and thus a refined vibratory experiment is proposed. The experiment is conceptually described as a single degree of freedom non-linear torsional system that is excited by an external step torque. The single torsional inertia (consisting of a shaft and torsion arm) is coupled to ground through parallel production clutch dampers, which are characterized by quasi-static measurements provided by the manufacturer. Other experimental objectives address physical dimensions, system actuation, flexural modes, instrumentation, and signal processing issues. Typical measurements show that the step response of the device is characterized by three distinct non-linear regimes (double-sided impact, single-sided impact, and no-impact). Each regime is directly related to the non-linear features of the device and can be described by peak angular acceleration values. Predictions of a simplified single degree of freedom non-linear model verify that the experiment performs well and as designed. Accordingly, the benchmark measurements could be utilized to validate non-linear models and simulation codes, as well as characterize dynamic parameters of the device including its dissipative properties.

  10. Nonlinear modeling of a long flexible manipulator and control by inertial devices

    NASA Technical Reports Server (NTRS)

    Barbieri, Enrique; Kenny, Sean P.; Montgomery, Raymond C.

    1992-01-01

    The authors consider the modeling and control of a planar, long flexible manipulator that is representative of current space-based robotic arms. The arm is equipped with three actuators: 1) a shoulder motor; 2) a torque wheel at the tip; and 3) a proof-mass actuator at the tip. The goal is to investigate the potential use of inertial devices as control inputs for maneuvering tasks and vibration suppression. The parameters used for the inertial devices at the tip are comparable to those specified for the Mini-Mast facility at the Langley Research Center. A nonlinear distributed parameter model is obtained by the extended Hamilton principle. The associated eigenvalue/eigenfunction problem is solved and a finite-dimensional state space model is assembled. A preliminary design of a linear quadratic regulator is used, and computer simulation results illustrate the benefits of using the proposed actuators.

  11. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; Clark, R.

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  12. Loss of energy dissipation capacity from the deadzone in linear and nonlinear viscous damping devices

    NASA Astrophysics Data System (ADS)

    Tong, Mai; Liebner, Thomas

    2007-03-01

    In a viscous damping device under cyclic loading, after the piston reaches a peak stroke, the reserve movement that follows may sometimes experience a short period of delayed or significantly reduced device force output. A similar delay or reduced device force output may also occur at the damper’s initial stroke as it moves away from its neutral position. This phenomenon is referred to as the effect of “deadzone”. The deadzone can cause a loss of energy dissipation capacity and less efficient vibration control. It is prominent in small amplitude vibrations. Although there are many potential causes of deadzone such as environmental factors, construction, material aging, and manufacture quality, in this paper, its general effect in linear and nonlinear viscous damping devices is analyzed. Based on classical dynamics and damping theory, a simple model is developed to capture the effect of deadzone in terms of the loss of energy dissipation capacity. The model provides several methods to estimate the loss of energy dissipation within the deadzone in linear and sublinear viscous fluid dampers. An empirical equation of loss of energy dissipation capacity versus deadzone size is formulated, and the equivalent reduction of effective damping in SDOF systems has been obtained. A laboratory experimental evaluation is carried out to verify the effect of deadzone and its numerical approximation. Based on the analysis, a modification is suggested to the corresponding formulas in FEMA 356 for calculation of equivalent damping if a deadzone is to be considered.

  13. Ultrafast nonlinear photoresponse of single-wall carbon nanotubes: a broadband degenerate investigation.

    PubMed

    Xu, Shuo; Wang, Fengqiu; Zhu, Chunhui; Meng, Yafei; Liu, Yujie; Liu, Wenqing; Tang, Jingyi; Liu, Kaihui; Hu, Guohua; Howe, Richard C T; Hasan, Tawfique; Zhang, Rong; Shi, Yi; Xu, Yongbing

    2016-04-28

    Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband 'degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ∼2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of SWNTs' nonlinear absorption characteristics, and help provide updated design guidelines for SWNT based nonlinear optical devices. PMID:27088630

  14. Ultrafast nonlinear photoresponse of single-wall carbon nanotubes: a broadband degenerate investigation

    NASA Astrophysics Data System (ADS)

    Xu, Shuo; Wang, Fengqiu; Zhu, Chunhui; Meng, Yafei; Liu, Yujie; Liu, Wenqing; Tang, Jingyi; Liu, Kaihui; Hu, Guohua; Howe, Richard C. T.; Hasan, Tawfique; Zhang, Rong; Shi, Yi; Xu, Yongbing

    2016-04-01

    Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of SWNTs' nonlinear absorption characteristics, and help provide updated design guidelines for SWNT based nonlinear optical devices.Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of

  15. Superconducting-semiconducting nanowire hybrid microwave circuits

    NASA Astrophysics Data System (ADS)

    de Lange, G.; van Heck, B.; Bruno, A.; van Woerkom, D.; Geresdi, A.; Plissard, S. R.; Bakkers, E. P. A. M.; Akhmerov, A. R.; Dicarlo, L.

    2015-03-01

    Hybrid superconducting-semiconducting circuits offer a versatile platform for studying quantum effects in mesoscopic solid-state systems. We report the realization of hybrid artificial atoms based on Indium-Arsenide nanowire Josephson elements in a circuit quantum electrodynamics architecture. Transmon-like single-junction devices have gate-tunable transition frequencies. Split-junction devices behave as transmons near zero applied flux and as flux qubits near half flux quantum, wherein states with oppositely flowing persistent current can be driven by microwaves. This flux-qubit like behaviour results from non-sinusoidal current-phase relations in the nanowire Josephson elements. These hybrid microwave circuits are made entirely of magnetic-field compatible materials, offering new opportunities for hybrid experiments combining microwave circuits with polarized spin ensembles and Majorana bound states. We acknowledge funding from Microsoft Research and the Dutch Organization for Fundamental Research on Matter (FOM).

  16. Broadband high-sensitivity current-sensing device utilizing nonlinear magnetoelectric medium and nanocrystalline flux concentrator.

    PubMed

    Zhang, Jitao; He, Wei; Zhang, Ming; Zhao, Hongmei; Yang, Qian; Guo, Shuting; Wang, Xiaolei; Zheng, Xiaowan; Cao, Lingzhi

    2015-09-01

    A broadband current-sensing device with frequency-conversion mechanism consisting of Terfenol-D/Pb(Zr.Ti)O3 (PZT)/Terfenol-D magnetoelectric laminate and Fe73.5Cu1Nb3Si13.5B9 nanocrystalline flux concentrator is fabricated and characterized. For the purpose of acquiring resonance-enhanced sensitivity within broad bandwidth, a frequency-modulation mechanism is introduced into the presented device through the nonlinearity of field-dependence giant magnetostrictive materials. The presented configuration provides a solution to monitor the weak currents and achieves resonance-enhanced sensitivity of 178.4 mV/A at power-line frequency, which exhibits ∼3.86 times higher than that of direct output at power-line frequency of 50 Hz. Experimental results demonstrate that a weak step-change input current of 1 mA can be clearly distinguished by the output amplitude or phase. This miniature current-sensing device provides a promising application in power-line weak current measurement. PMID:26429473

  17. Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.

    Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical

  18. Highly nonlinear chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation

    NASA Astrophysics Data System (ADS)

    Hudson, Darren D.; Mägi, Eric C.; Judge, Alexander C.; Dekker, Stephen A.; Eggleton, Benjamin J.

    2012-10-01

    In this review we consider the basic elements of tapering chalcogenide optical fibers for the generation of extreme spectral broadening through supercontinuum generation. Creating tapered nanofiber devices in chalcogenide fiber, which has an intrinsic nonlinearity that is two orders of magnitude higher than silica, has resulted in the demonstration of octave-spanning spectra using record low power. We first present a brief theoretical understanding of the tapering process that follows from the basic principle of mass conservation, and a geometric construction tool for the visualization of the shape of tapered fibers. This is followed by a theoretical treatment of dispersion engineering and supercontinuum generation in a chalcogenide nanofiber. In the final section, we cover the experimental implementation of the chalcogenide nanofiber and demonstrate an octave-spanning spectrum created with 150 W of peak power.

  19. CONTROL OF NONLINEAR DYNAMICS BY ACTIVE AND PASSIVE METHODS FOR THE NSLS-II INSERTION DEVICES

    SciTech Connect

    Bengtsson J.; Chubar, O.; Kitegi, C.; Tanabe, T.

    2012-05-20

    Nonlinear effects from insertion devices are potentially a limiting factor for the electron beam quality of modern ring-based light sources, i.e., the on and off-dynamical aperture, leading to reduced injection efficiency and beam lifetime. These effects can be modelled by e.g. kick maps ({approx}1/{gamma}{sup 2}) and controlled by e.g. first-order thin or thick magnetic kicks introduced by 'magic fingers,' 'L-shims,' or 'current strips'. However, due to physical or technological constraints, these corrections are typically only partial. Therefore, a precise model is needed to correctly minimize the residual nonlinear effects for the entire system. We outline a systematic method for integrated design and rapid prototyping based on evaluation of the 3D magnetic field and control of the local trajectory with RADIA, and particle tracking with Tracy-3 for validation. The optimal geometry for the compensating magnetic fields is determined from the results of these simulations using a combination of linear algebra and genetic optimization.

  20. Ni doping of semiconducting boron carbide

    SciTech Connect

    Hong, Nina; Liu Jing; Adenwalla, S.; Langell, M. A.; Kizilkaya, Orhan

    2010-01-15

    The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

  1. Nonlinear vibration control and energy harvesting of a beam using a nonlinear energy sink and a piezoelectric device

    NASA Astrophysics Data System (ADS)

    Nili Ahmadabadi, Z.; Khadem, S. E.

    2014-09-01

    This paper presents an optimal design for a system comprising a nonlinear energy sink (NES) and a piezoelectric-based vibration energy harvester attached to a free-free beam under shock excitation. The energy harvester is used for scavenging vibration energy dissipated by the NES. Grounded and ungrounded configurations are examined and the systems parameters are optimized globally to both maximize the dissipated energy by the NES and increase the harvested energy by piezoelectric element. A satisfactory amount of energy has been harvested as electric power in both configurations. The realization of nonlinear vibration control through one-way irreversible nonlinear energy pumping and optimizing the system parameters result in acquiring up to 78 percent dissipation of the grounded system energy.

  2. Frequency-Domain Models for Nonlinear Microwave Devices Based on Large-Signal Measurements

    PubMed Central

    Jargon, Jeffrey A.; DeGroot, Donald C.; Gupta, K. C.

    2004-01-01

    In this paper, we introduce nonlinear large-signal scattering ( S) parameters, a new type of frequency-domain mapping that relates incident and reflected signals. We present a general form of nonlinear large-signal S-parameters and show that they reduce to classic S-parameters in the absence of nonlinearities. Nonlinear large-signal impedance ( Z) and admittance ( D) parameters are also introduced, and equations relating the different representations are derived. We illustrate how nonlinear large-signal S-parameters can be used as a tool in the design process of a nonlinear circuit, specifically a single-diode 1 GHz frequency-doubler. For the case where a nonlinear model is not readily available, we developed a method of extracting nonlinear large-signal S-parameters obtained with artificial neural network models trained with multiple measurements made by a nonlinear vector network analyzer equipped with two sources. Finally, nonlinear large-signal S-parameters are compared to another form of nonlinear mapping, known as nonlinear scattering functions. The nonlinear large-signal S-parameters are shown to be more general. PMID:27366621

  3. Acceleration Sensing, Feedback Cooling, and Nonlinear Dynamics with Nanoscale Cavity-Optomechanical Devices

    NASA Astrophysics Data System (ADS)

    Krause, Alexander Grey

    Light has long been used for the precise measurement of moving bodies, but the burgeoning field of optomechanics is concerned with the interaction of light and matter in a regime where the typically weak radiation pressure force of light is able to push back on the moving object. This field began with the realization in the late 1960's that the momentum imparted by a recoiling photon on a mirror would place fundamental limits on the smallest measurable displacement of that mirror. This coupling between the frequency of light and the motion of a mechanical object does much more than simply add noise, however. It has been used to cool objects to their quantum ground state, demonstrate electromagnetically-induced-transparency, and modify the damping and spring constant of the resonator. Amazingly, these radiation pressure effects have now been demonstrated in systems ranging 18 orders of magnitude in mass (kg to fg). In this work we will focus on three diverse experiments in three different optomechanical devices which span the fields of inertial sensors, closed-loop feedback, and nonlinear dynamics. The mechanical elements presented cover 6 orders of magnitude in mass (ng to fg), but they all employ nano-scale photonic crystals to trap light and resonantly enhance the light-matter interaction. In the first experiment we take advantage of the sub-femtometer displacement resolution of our photonic crystals to demonstrate a sensitive chip-scale optical accelerometer with a kHz-frequency mechanical resonator. This sensor has a noise density of approximately 10 micro-g/rt-Hz over a useable bandwidth of approximately 20 kHz and we demonstrate at least 50 dB of linear dynamic sensor range. We also discuss methods to further improve performance of this device by a factor of 10. In the second experiment, we used a closed-loop measurement and feedback system to damp and cool a room-temperature MHz-frequency mechanical oscillator from a phonon occupation of 6.5 million down to

  4. Sensorless cardiac phase detection for synchronized control of ventricular assist devices using nonlinear kernel regression model.

    PubMed

    Hirohashi, Yoshihiro; Tanaka, Akira; Yoshizawa, Makoto; Sugita, Norihiro; Abe, Makoto; Kato, Tsuyoshi; Shiraishi, Yasuyuki; Miura, Hidekazu; Yambe, Tomoyuki

    2016-06-01

    Recently, driving methods for synchronizing ventricular assist devices (VADs) with heart rhythm of patients suffering from severe heart failure have been receiving attention. Most of the conventional methods require implanting a sensor for measurement of a signal, such as electrocardiogram, to achieve synchronization. In general, implanting sensors into the cardiovascular system of the patients is undesirable in clinical situations. The objective of this study was to extract the heartbeat component without any additional sensors, and to synchronize the rotational speed of the VAD with this component. Although signals from the VAD such as the consumption current and the rotational speed are affected by heartbeat, these raw signals cannot be utilized directly in the heartbeat synchronization control methods because they are changed by not only the effect of heartbeat but also the change in the rotational speed itself. In this study, a nonlinear kernel regression model was adopted to estimate the instantaneous rotational speed from the raw signals. The heartbeat component was extracted by computing the estimation error of the model with parameters determined by using the signals when there was no effect of heartbeat. Validations were conducted on a mock circulatory system, and the heartbeat component was extracted well by the proposed method. Also, heartbeat synchronization control was achieved without any additional sensors in the test environment. PMID:26758256

  5. A nonlinear MEMS electrostatic kinetic energy harvester for human-powered biomedical devices

    SciTech Connect

    Lu, Y.; Cottone, F.; Marty, F.; Basset, P.; Galayko, D.

    2015-12-21

    This article proposes a silicon-based electrostatic kinetic energy harvester with an ultra-wide operating frequency bandwidth from 1 Hz to 160 Hz. This large bandwidth is obtained, thanks to a miniature tungsten ball impacting with a movable proof mass of silicon. The motion of the silicon proof mass is confined by nonlinear elastic stoppers on the fixed part standing against two protrusions of the proof mass. The electrostatic transducer is made of interdigited-combs with a gap-closing variable capacitance that includes vertical electrets obtained by corona discharge. Below 10 Hz, the e-KEH offers 30.6 nJ per mechanical oscillation at 2 g{sub rms}, which makes it suitable for powering biomedical devices from human motion. Above 10 Hz and up to 162 Hz, the harvested power is more than 0.5 μW with a maximum of 4.5 μW at 160 Hz. The highest power of 6.6 μW is obtained without the ball at 432 Hz, in accordance with a power density of 142 μW/cm{sup 3}. We also demonstrate the charging of a 47-μF capacitor to 3.5 V used to power a battery-less wireless temperature sensor node.

  6. A nonlinear MEMS electrostatic kinetic energy harvester for human-powered biomedical devices

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Cottone, F.; Boisseau, S.; Marty, F.; Galayko, D.; Basset, P.

    2015-12-01

    This article proposes a silicon-based electrostatic kinetic energy harvester with an ultra-wide operating frequency bandwidth from 1 Hz to 160 Hz. This large bandwidth is obtained, thanks to a miniature tungsten ball impacting with a movable proof mass of silicon. The motion of the silicon proof mass is confined by nonlinear elastic stoppers on the fixed part standing against two protrusions of the proof mass. The electrostatic transducer is made of interdigited-combs with a gap-closing variable capacitance that includes vertical electrets obtained by corona discharge. Below 10 Hz, the e-KEH offers 30.6 nJ per mechanical oscillation at 2 grms, which makes it suitable for powering biomedical devices from human motion. Above 10 Hz and up to 162 Hz, the harvested power is more than 0.5 μW with a maximum of 4.5 μW at 160 Hz. The highest power of 6.6 μW is obtained without the ball at 432 Hz, in accordance with a power density of 142 μW/cm3. We also demonstrate the charging of a 47-μF capacitor to 3.5 V used to power a battery-less wireless temperature sensor node.

  7. Strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena.

    PubMed

    Sugioka, Hideyuki

    2015-12-01

    Surface science is key to innovations on microfluidics, smart materials, and future non-equilibrium systems. However, challenging issues still exist in this field. In this article, from the viewpoint of the fundamental design, we will briefly review our strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena. In particular, we will review the microfluidic applications using ICEO, the correction based on the ion-conserving Poisson-Boltzmann theory, the direct simulation on ICEO, and the new horizon such as nonlinear thermo-kinetic phenomena and the artificial cilia. PMID:26482087

  8. Considerations on nonlinearity measurement with high signal-to-noise ratio for RF surface and bulk acoustic wave devices

    NASA Astrophysics Data System (ADS)

    Kodaira, Ryosuke; Omori, Tatsuya; Hashimoto, Ken-ya; Kyoya, Haruki; Nakagawa, Ryo

    2015-07-01

    This paper discusses the measurement setup of non-linearity caused in radio frequency (RF) surface and bulk acoustic wave (SAW/BAW) devices with high signal-to-noise ratio (SNR). It is shown that when some important points are considered, the background level can be suppressed better than -135 dBm, and the non-linearity signals can be measured in high SNR. Finally, measured results are compared with those measured independently by Murata Manufacturing, and validity of the measurement is cross-checked.

  9. Graphene-assisted nonlinear optical device for four-wave mixing based tunable wavelength conversion of QPSK signal.

    PubMed

    Hu, Xiao; Zeng, Mengqi; Wang, Andong; Zhu, Long; Fu, Lei; Wang, Jian

    2015-10-01

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using such graphene-assisted nonlinear optical device, we experimentally demonstrate tunable wavelength conversion of a 10 Gbaud quadrature phase-shift keying (QPSK) signal by exploiting degenerate four-wave mixing (FWM) progress in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. The observed optical signal-to-noise ratio (OSNR) penalties for tunable QPSK wavelength conversion are less than 2.2 dB at a BER of 1 × 10(-3). PMID:26480130

  10. Atomistic study on dithiolated oligo-phenylenevinylene gated device

    SciTech Connect

    Mahmoud, Ahmed Lugli, Paolo

    2014-11-28

    Thanks to their semiconducting behavior, conjugated molecules are considered as an attractive candidate for future electronic devices. Understanding the charge transport characteristics through such molecules for different device applications would accelerate the progress in the field of molecular electronics. In addition, it would become more feasible to introduce/enhance specific properties of molecular devices. This theoretical paper focuses on atomistic simulation and characterization of novel molecular FET employing dithiolated oligo-phenylenevinylene molecules. The simulation is validated by its agreement with the experimental measurements conducted on the same molecules. The employed molecule has oxygen linkers, which are responsible for the strongly nonlinear current characteristics on the molecular device. We perform a thorough atomistic device analysis to illustrate the principles behind the nonlinear current characteristics and the gating effect.

  11. Doping of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kutler, Paul (Technical Monitor)

    1997-01-01

    Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

  12. Uncovering location-specific ultrafast exciton dynamics in organic semiconducting thin films

    NASA Astrophysics Data System (ADS)

    Ginsberg, Naomi

    2014-03-01

    In solid state semiconducting molecular materials used in electro-optical applications, relatively long exciton diffusion lengths hold the promise to boost device performance by relaxing proximity constraints on the locations for light absorption and interfacial charge separation. The architecture of such materials determines their optical and electronic properties as a result of spacing- and orientation-dependent Coulomb couplings between adjacent molecules. Exciton character and dynamics are generally inferred from bulk optical measurements, which can present a severe limitation on our understanding of these films because their constituent molecules are neither perfectly ordered nor perfectly disordered. Nevertheless, such microstructure can have profound impacts on transport properties. The ultrafast spectroscopy of single domains of polycrystalline films of TIPS-pentacene, a small-molecule organic semiconductor of interest in electronic and photovoltaic applications, is investigated using transient absorption microscopy. Individual domains are distinguished by their different polarization-dependent linear and nonlinear optical responses. As compared to bulk measurements, we show that the nonlinear response within a given domain can be tied more concretely to specific physical processes that transfer exciton populations between specified electronic states. By use of this approach and a simple kinetic model, the signatures of singlet fission as well as vibrational relaxation of the initially excited singlet state are identified. As such, observing exciton dynamics within and comparing exciton dynamics between different TIPS-pentacene domains reveal the relationship between photophysics and film morphology and the potential to resolve unique signatures at interfaces between different regions of the film.

  13. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  14. Correlation between quasi-static and dynamic experiments for a practical torsional device with multiple discontinuous nonlinearities

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Singh, Rajendra

    2016-09-01

    Vehicle clutch dampers belong to a family of torsional devices or isolators that contain multi-staged torsional springs, pre-load features, clearances, and multi-staged dry friction elements. Estimation of elastic and dissipative parameters is usually carried out under quasi-static loading and then these static parameters are often assumed when predicting dynamic responses. For the purpose of comparison, this article proposes a new time domain parameter estimation method under dynamic, transient loading conditions. The proposed method assumes a priori knowledge of few nonlinear features based on the design and quasi-static characterization. Angular motion measurements from a component-level laboratory experiment under dynamic loading are utilized. Elastic parameters are first estimated through an instantaneous stochastic linearization technique. A model-based approach and energy balance principle are employed to estimate a combination of viscous and Coulomb damping parameters for seven local (stage-dependent) and global damping formulations for a practical device. The proposed method is validated by comparing time domain predictions from nonlinear models to dynamic measurements. Nonlinear models that utilize the proposed damping formulations are found to be superior to those that solely rely on parameters from a quasi-static experiment.

  15. A non-device-specific approach to display characterization based on linear, nonlinear, and hybrid search algorithms.

    PubMed

    Ban, Hiroshi; Yamamoto, Hiroki

    2013-01-01

    In almost all of the recent vision experiments, stimuli are controlled via computers and presented on display devices such as cathode ray tubes (CRTs). Display characterization is a necessary procedure for such computer-aided vision experiments. The standard display characterization called "gamma correction" and the following linear color transformation procedure are established for CRT displays and widely used in the current vision science field. However, the standard two-step procedure is based on the internal model of CRT display devices, and there is no guarantee as to whether the method is applicable to the other types of display devices such as liquid crystal display and digital light processing. We therefore tested the applicability of the standard method to these kinds of new devices and found that the standard method was not valid for these new devices. To overcome this problem, we provide several novel approaches for vision experiments to characterize display devices, based on linear, nonlinear, and hybrid search algorithms. These approaches never assume any internal models of display devices and will therefore be applicable to any display type. The evaluations and comparisons of chromaticity estimation accuracies based on these new methods with those of the standard procedure proved that our proposed methods largely improved the calibration efficiencies for non-CRT devices. Our proposed methods, together with the standard one, have been implemented in a MATLAB-based integrated graphical user interface software named Mcalibrator2. This software can enhance the accuracy of vision experiments and enable more efficient display characterization procedures. The software is now available publicly for free. PMID:23729771

  16. Dynamic manipulation and separation of individual semiconducting and metallic nanowires

    PubMed Central

    Jamshidi, Arash; Pauzauskie, Peter J.; Schuck, P. James; Ohta, Aaron T.; Chiou, Pei-Yu; Chou, Jeffrey; Yang, Peidong; Wu, Ming C.

    2009-01-01

    The synthesis of nanowires has advanced in the last decade to a point where a vast range of insulating, semiconducting, and metallic materials1 are available for use in integrated, heterogeneous optoelectronic devices at nanometer scales 2. However, a persistent challenge has been the development of a general strategy for the manipulation of individual nanowires with arbitrary composition. Here we report that individual semiconducting and metallic nanowires with diameters below 20 nm, are addressable with forces generated by optoelectronic tweezers (OET) 3. Using 100,000× less optical power density than optical tweezers, OET is capable of transporting individual nanowires with speeds 4× larger than maximum speeds achieved by optical tweezers. A real-time array of silver nanowires is formed using photopatterned virtual-electrodes, demonstrating the potential for massively parallel assemblies. Furthermore, OET enables the separation of semiconducting and metallic nanowires, suggesting a broad range of applications for the separation and heterogenous integration of one-dimensional nanoscale materials. PMID:19789729

  17. Electrospun Composite Nanofibers of Semiconductive Polymers for Coaxial PN Junctions

    NASA Astrophysics Data System (ADS)

    Serrano, William; Thomas, Sylvia

    The objective of this research is to investigate the conditions under P3HT and Activink, semiconducting polymers, form 1 dimension (1D) coaxial p-n junctions and to characterize their behavior in the presence of UV radiation and organic gases. For the first time, fabrication and characterization of semiconductor polymeric single fiber coaxial arrangements will be studied. Electrospinning, a low cost, fast and reliable method, with a coaxial syringe arrangement will be used to fabricate these fibers. With the formation of fiber coaxial arrangements, there will be investigations of dimensionality crossovers e.g., from one-dimensional (1D) to two-dimensional (2D). Coaxial core/shell fibers have been realized as seen in a recent publication on an electrospun nanofiber p-n heterojunction of oxides (BiFeO3 and TiO2, respectively) using the electrospinning technique with hydrothermal method. In regards to organic semiconducting coaxial p-n junction nanofibers, no reported studies have been conducted, making this study fundamental and essential for organic semiconducting nano devices for flexible electronics and multi-dimensional integrated circuits.

  18. Spatial confinement effects on ultrathin semiconducting polymer heterojunction thin films

    SciTech Connect

    Xuejun Zhang; Jenekhe, S.A.

    1996-12-31

    Thin and ultrathin films of electroactive and photoactive polymers are of growing interest for applications in electronic and optoelectronic devices such as thin film transistors, light emitting diodes, solar cells, and xerographic photoreceptors. Although spatial confinement effects on the electronic, optical, optoelectronic, magnetic, and mechanical properties of inorganic semiconductors, metals, oxides, and ceramics are well known and understood, very little is currently known about nanoscale size effects in electroactive and photoactive polymers. Therefore, we recently initiated studies aimed at the understanding of spatial confinement effects on electroactive and photoactive nanostructured polymers and related thin film devices. We have extensively investigated layered nanoscale semiconducting polymer heterojunctions by applying several experimental techniques including photoluminescence, optical absorption, transient absorption, electroluminescence, cyclic voltammetry, and current-voltage measurements. Our findings reveal clear evidence of spatial confinement effects, including: dramatic enhancement of photoconductivity in ultrathin films; enhancement of electroluminescence efficiency and performance characteristics in nanoscale heterojunction devices; observation of novel phenomena in nanoscale devices. These spatial confinement effects in nanostructured semiconducting polymers can be understood in terms of classical charge transport and interfacial processes without invoking quantum size effects.

  19. Semiconducting nanowire field effect transistor for nanoelectronics and nanomechanics

    NASA Astrophysics Data System (ADS)

    Deshmukh, Mandar

    2013-02-01

    Semiconducting nanowire transistors offer an interesting avenue to make fundamentally new device architecture for future switching devices. I will our work to develop a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility using InAs nanowires and also discuss electrical characterization of these devices. Our process uses e-beam lithography with a single resist-spinning step and does not require chemical etching. We measure significantly larger mobility and good sub-threshold characteristics [1]. I will also discuss the applications of using suspended nanowire transistors in studying mechanics and thermal properties of nanostructures as they can be useful in studying a wide variety of physics at the nanoscale. This work is supported by Government of India and partially supported by IBM India.

  20. A simple and reliable technique to characterize amplitude to phase modulation distortion for high-frequency amplifiers and nonlinear devices

    NASA Astrophysics Data System (ADS)

    Jauregui, Rigoberto; Portilla, Joaquin; Reynoso-Hernández, J. A.; Hirata-Flores, F. I.

    2013-08-01

    This paper presents a simple and reliable measurement system for characterizing the amplitude to phase modulation (AM-PM) characteristics of high frequency amplifiers and nonlinear devices. The AM-PM measurement system is based on a null detector implemented with a double balanced mixer, and requires a voltmeter and a calibrated phase shifter. A 12 W class A radio frequency power amplifier has been designed using a GaN transistor, and the AM-PM has been measured using both the method proposed in this work and the classical method with a calibrated vector network analyzer. A good correlation between both methods is observed, which validates the proposed method.

  1. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2010-05-11

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  2. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2012-10-02

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  3. High-mobility ultrathin semiconducting films prepared by spin coating

    NASA Astrophysics Data System (ADS)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  4. Nonlinear dynamics of a rack-pinion-rack device powered by the Casimir force.

    PubMed

    Miri, MirFaez; Nekouie, Vahid; Golestanian, Ramin

    2010-01-01

    Using the lateral Casimir force-a manifestation of the quantum fluctuations of the electromagnetic field between objects with corrugated surfaces-as the main force transduction mechanism, a nanomechanical device with rich dynamical behaviors is proposed. The device is made of two parallel racks that are moving in the same direction and a pinion in the middle that couples with both racks via the noncontact lateral Casimir force. The built-in frustration in the device causes it to be very sensitive and react dramatically to minute changes in the geometrical parameters and initial conditions of the system. The noncontact nature of the proposed device could help with the ubiquitous wear problem in nanoscale mechanical systems. PMID:20365429

  5. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  6. An Exploration of Neutron Detection in Semiconducting Boron Carbide

    NASA Astrophysics Data System (ADS)

    Hong, Nina

    The 3He supply problem in the U.S. has necessitated the search for alternatives for neutron detection. The neutron detection efficiency is a function of density, atomic composition, neutron absorption cross section, and thickness of the neutron capture material. The isotope 10B is one of only a handful of isotopes with a high neutron absorption cross section---3840 barns for thermal neutrons. So a boron carbide semiconductor represents a viable alternative to 3He. This dissertation provides an evaluation of the performance of semiconducting boron carbide neutron detectors grown by plasma enhance chemical vapor deposition (PECVD) in order to determine the advantages and drawbacks of these devices for neutron detection. Improved handling of the PECVD system has resulted in an extremely stable plasma, enabling deposition of thick films of semiconducting boron carbide. A variety of material and semiconducting characterization tools have been used to investigate the structure and electronic properties of boron carbide thin films, including X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, infrared/Raman spectroscopy, current-voltage measurements and capacitance-voltage measurements. Elemental concentrations in the boron carbide films have been obtained from Rutherford backscattering and elastic recoil detection analysis. Solid state neutron detection devices have been fabricated in the form of heterostructured p-n diodes, p-type boron carbide/n-type Si. Operating conditions, including applied bias voltage, and time constants, have been optimized for maximum detection efficiency and correlated to the semiconducting properties investigated in separate electronic measurements. Accurate measurements of the neutron detection efficiency and the response of the detector to a wide range of neutron wavelengths have been performed at a well calibrated, tightly collimated, "white" cold neutron beam source using time-of-flight neutron detection technique

  7. Short Channel Field-Effect-Transistors with Inkjet-Printed Semiconducting Carbon Nanotubes.

    PubMed

    Jang, Seonpil; Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2015-11-01

    Short channel field-effect-transistors with inkjet-printed semiconducting carbon nanotubes are fabricated using a novel strategy to minimize material consumption, confining the inkjet droplet into the active channel area. This fabrication approach is compatible with roll-to-roll processing and enables the formation of high-performance short channel device arrays based on inkjet printing. PMID:26312458

  8. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    DOEpatents

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  9. High-performing nonlinear visualization of terahertz radiation on a silicon charge-coupled device

    PubMed Central

    Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

    2015-01-01

    Photoinduced electron transitions can lead to significant changes of the macroscopic electronic properties in semiconductors. This principle is responsible for the detection of light with charge-coupled devices. Their spectral sensitivity is limited by the semiconductor bandgap which has restricted their visualization capabilities to the optical, ultraviolet, and X-ray regimes. The absence of an imaging device in the low frequency terahertz range has severely hampered the advance of terahertz imaging applications in the past. Here we introduce a high-performing imaging concept to the terahertz range. On the basis of a silicon charge-coupled device we visualize 5–13 THz radiation with photon energy under 2% of the sensor's band-gap energy. The unprecedented small pitch and large number of pixels allow the visualization of complex terahertz radiation patterns in real time and with high spatial detail. This advance will have a great impact on a wide range of terahertz imaging disciplines. PMID:26496973

  10. Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.

    PubMed

    Bae, Insung; Hwang, Sun Kak; Kim, Richard Hahnkee; Kang, Seok Ju; Park, Cheolmin

    2013-11-13

    Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface. PMID:24070419

  11. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

    PubMed Central

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G.; Brueck, Steven R. J.; Krishna, Sanjay

    2015-01-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K. PMID:26126936

  12. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

    NASA Astrophysics Data System (ADS)

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G.; Brueck, Steven R. J.; Krishna, Sanjay

    2015-07-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K.

  13. Nonlinear saturation of the ion-electron Buneman instability in a spherical positively pulsed gridded inertial electrostatic confinement device

    SciTech Connect

    Bandara, R.; Khachan, J.

    2015-08-15

    A pulsed, positively biased gridded inertial electrostatic confinement device has been investigated experimentally, using Doppler broadened spectra and current and voltage traces as primary diagnostics. In the high current and energy regime explored in this paper resulting from the removal of the series ballast resistance from the external biasing circuit, large amplitude oscillations in the plasma current and potential were observed within 100 ns of the discharge onset. These oscillations are attributed to the nonlinear and saturated Buneman instability, characterised by a locked oscillation frequency as a function of increasing anode potential. The saturated Buneman instability is known to exhibit ion mass independent behaviour and cause electron trapping, resulting in a transient spatio-temporal virtual cathode and ponderomotive ion confinement, as evidenced by broadened spectra when operated at high currents.

  14. Further improved algorithm for the solution of the nonlinear Poisson equation in semiconductor devices

    NASA Astrophysics Data System (ADS)

    Ouwerling, G. J. L.

    1989-12-01

    This paper gives a concise overview of some existing methods for the solution of the nonlinear Poisson equation in semiconductors. A method for the solution of this equation was recently proposed in this journal by I. D. Mayergoyz [J. Appl. Phys. 59, 195 (1986)]. Soon afterwards, an improved version was described by W. Keller [J. Appl. Phys. 61, 5189 (1987)]. Both methods are classified within the perspective of the existing methods. Moreover, Keller's method is further improved by the introduction of scaled variables and by using red-black ordening to allow for overrelaxation. All advantages of the two methods are maintained. An illustrative example shows an improvement in solution speed of at least a factor of 5.6.

  15. Photoexcitation dynamics of coupled semiconducting carbon nanotube thin films.

    PubMed

    Mehlenbacher, Randy D; Wu, Meng-Yin; Grechko, Maksim; Laaser, Jennifer E; Arnold, Michael S; Zanni, Martin T

    2013-04-10

    Carbon nanotubes are a promising means of capturing photons for use in solar cell devices. We time-resolved the photoexcitation dynamics of coupled, bandgap-selected, semiconducting carbon nanotubes in thin films tailored for photovoltaics. Using transient absorption spectroscopy and anisotropy measurements, we found that the photoexcitation evolves by two mechanisms with a fast and long-range component followed by a slow and short-range component. Within 300 fs of optical excitation, 20% of nanotubes transfer their photoexcitation over 5-10 nm into nearby nanotube fibers. After 3 ps, 70% of the photoexcitation resides on the smallest bandgap nanotubes. After this ultrafast process, the photoexcitation continues to transfer on a ~10 ps time scale but to predominantly aligned tubes. Ultimately the photoexcitation hops twice on average between fibers. These results are important for understanding the flow of energy and charge in coupled nanotube materials and light-harvesting devices. PMID:23464618

  16. Semiconducting single-walled carbon nanotubes sorting with a removable solubilizer based on dynamic supramolecular coordination chemistry

    NASA Astrophysics Data System (ADS)

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2014-10-01

    Highly pure semiconducting single-walled carbon nanotubes (SWNTs) are essential for the next generation of electronic devices, such as field-effect transistors and photovoltaic applications; however, contamination by metallic SWNTs reduces the efficiency of their associated devices. Here we report a simple and efficient method for the separation of semiconducting- and metallic SWNTs based on supramolecular complex chemistry. We here describe the synthesis of metal-coordination polymers (CP-Ms) composed of a fluorene-bridged bis-phenanthroline ligand and metal ions. On the basis of a difference in the ‘solubility product’ of CP-M-solubilized semiconducting SWNTs and metallic SWNTs, we readily separated semiconducting SWNTs. Furthermore, the CP-M polymers on the SWNTs were simply removed by adding a protic acid and inducing depolymerization to the monomer components. We also describe molecular mechanics calculations to reveal the difference of binding and wrapping mode between CP-M/semiconducting SWNTs and CP-M/metallic SWNTs. This study opens a new stage for the use of such highly pure semiconducting SWNTs in many possible applications.

  17. Gallium Arsenide Quantum Well Devices for Detection and Nonlinear Optics in the Mid-Infrared

    NASA Astrophysics Data System (ADS)

    Grave, Ilan

    observation of enhanced nonlinear optical effects at the mid infrared, close to intersubband resonances. Second harmonic generation is obtained around 5 mu m. Third-order effects are then investigated in different experimental configurations, including the first observation of phase conjugation based on these nonlinearities. Very large third-order susceptibilities and intensity-dependent refractive indices are deduced from the experimental results.

  18. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    SciTech Connect

    Beninato, A.; Baglio, S.; Andò, B.; Emery, T.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-09

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3} shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  19. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    NASA Astrophysics Data System (ADS)

    Beninato, A.; Emery, T.; Baglio, S.; Andò, B.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-01

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi0.7Dy0.3FeO3 shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi0.7Dy0.3FeO3, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a "blueprint" for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or "target" B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  20. Nonlinear fluid/structure interaction relating a rupture-disc pressure-relief device. [LMFBR

    SciTech Connect

    Hsieh, B.J.; Kot, C.A.; Shin, Y.W.; Youngdahl, C.K.

    1983-01-01

    Rupture disc assemblies are used in piping network systems as a pressure-relief device. The reverse-buckling type is chosen for application in a liquid metal fast breeder reactor. This assembly is used successfully in systems in which the fluid is highly compressible, such as air; the opening up of the disc by the knife setup is complete. However, this is not true for a liquid system; it had been observed experimentally that the disc may open up only partially or not at all. Therefore, to realistically understand and represent a rupture disc assembly in a liquid environment, the fluid-structure interactions between the liquid medium and the disc assembly must be considered. The methods for analyzing the fluid and the disc and the mechanism interconnecting them are presented. The fluid is allowed to cavitate through a column-cavitation model and the disc is allowed to become plastically deformed through the classic Von Mises' yield criteria, when necessary.

  1. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.

    PubMed

    Park, Sukhyung; Cho, Kyoungah; Jung, Jungwoo; Kim, Sangsig

    2015-10-01

    In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics. PMID:26726373

  2. Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics.

    PubMed

    Liu, Hsuan-Wei; Lin, Fan-Cheng; Lin, Shi-Wei; Wu, Jau-Yang; Chou, Bo-Tsun; Lai, Kuang-Jen; Lin, Sheng-Di; Huang, Jer-Shing

    2015-04-28

    Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices. PMID:25848830

  3. Surface passivation of semiconducting oxides by self-assembled nanoparticles

    NASA Astrophysics Data System (ADS)

    Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

    2016-01-01

    Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials.

  4. Surface passivation of semiconducting oxides by self-assembled nanoparticles

    PubMed Central

    Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

    2016-01-01

    Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

  5. Piezo-phototronic effect devices

    DOEpatents

    Wang, Zhong L.; Yang, Qing

    2013-09-10

    A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

  6. Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

    NASA Astrophysics Data System (ADS)

    Yan, Shu

    Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping

  7. Nonlinear fluid/structure interaction relating a rupture-disc pressure-relief device

    SciTech Connect

    Hsieh, B.J.; Kot, C.A.; Shin, Y.W.; Youngdahi, C.K.

    1983-01-01

    Rupture disc assemblies are used in piping network systems as pressure-relief devices. The reverse-buckling type discs are chosen for application in heat transport systems of liquid metal fast breeder reactors. When the pressure on the disc is of sufficient magnitude and duration, the disc develops large displacement, is consequently torn open by a cutting-knife setup and thus relieves the excess pressure. Such disc assemblies are used very successfully in systems in which the fluid is highly compressible, e.g., air; the opening of the disc by the knife setup is complete. However, this is not true for a liquid system; in this case it has been observed experimentally that the disc may open up only partially or not at all. Therefore, to understand and realistically represent a rupture disc assembly in a liquid environment, the fluid-structure interactions between the liquid medium and the disc assembly must be considered. In this paper, methods for analyzing the fluid and the disc and the mechanism interconnecting them are presented. When necessary the fluid is allowed to cavitate through a column separation model and the disc can become plastically deformed using the classic Von Mises' yield criteria.

  8. Organic field-effect transistors based on a crosslinkable polymer blend as the semiconducting layer

    NASA Astrophysics Data System (ADS)

    Yan, He; Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J.

    2005-10-01

    For fabrication of top-gate polymer-based organic field-effect transistors (OFETs), it is essential that the semiconducting layer remain intact during spin coating of the overlying dielectric layer. This requirement severely limits the applicable solvent and materials combinations. We show here that a crosslinkable polymer blend consisting of a p-type semiconducting polymer {e.g., TFB; poly[9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine]} and an electroactive crosslinkable silyl reagent {e.g., TPDSi2; 4,4'-bis[(p-trichloro-silylpropylphenyl)phenylamino]biphenyl} is effective as the semiconducting layer in a top-gate bottom-contact OFET device. The TFB +TPDSi2 semiconducting blend is prepared by spin-coating in ambient. The crosslinking process occurs during spin-coating in air and is completed by curing at 90 °C, which renders the resulting film insoluble in common organic solvents and allows subsequent deposition of dielectric layers from a wide range of organic solvents. We also show that the presence of TPDSi2 in the semiconductor layer significantly reduces typical TFB-source-drain threshold voltages in bottom-contact devices, likely due to favorable interfacial TPDSi2-gold electrode interactions.

  9. Growth of single crystals of organic salts with large second-order optical nonlinearities by solution processes for devices

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1995-01-01

    Data obtained from the electric field induced second harmonic generation (EFISH) and Kurtz Powder Methods will be provided to MSFC for further refinement of their method. A theoretical model for predicting the second-order nonlinearities of organic salts is being worked on. Another task is the synthesis of a number of salts with various counterions. Several salts with promising SHG activities and new salts will be tested for the presence of two crystalline forms. The materials will be recrystallized from dry and wet solvents and compared for SHG efficiency. Salts that have a high SHG efficiency and no tendency to form hydrates will be documented. The synthesis of these materials are included in this report. A third task involves method to aid in the growth of large, high quality single crystals by solution processes. These crystals will be characterized for their applicability in the fabrication of devices that will be incorporated into optical computers in future programs. Single crystals of optimum quality may be obtained by crystal growth in low-gravity. The final task is the design of a temperature lowering single crystal growth apparatus for ground based work. At least one prototype will be built.

  10. Semiconducting Ge clathrates: Promising candidates for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Nolas, G. S.; Cohn, J. L.; Slack, G. A.; Schujman, S. B.

    1998-07-01

    Transport properties of polycrystalline Ge clathrates with general composition Sr8Ga16Ge30 are reported in the temperature range 5 K⩽T⩽300 K. These compounds exhibit N-type semiconducting behavior with relatively high Seebeck coefficients and electrical conductivity, and room temperature carrier concentrations in the range of 1017-1018cm-3. The thermal conductivity is more than an order of magnitude smaller than that of crystalline germanium and has a glasslike temperature dependence. The resulting thermoelectric figure of merit, ZT, at room temperature for the present samples is 1/4 that of Bi2Te3 alloys currently used in devices for thermoelectric cooling. Extrapolating our measurements to above room temperature, we estimate that ZT>1 at T>700 K, thus exceeding that of most known materials.

  11. Investigation of charge injection characteristics in diketopyrrolopyrrole ambipolar semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Lee, Seon Jeng; Jung, Seok Heon; Lee, Jin-Kyun; Kim, Cheawon; Lee, Mi Jung

    2014-10-01

    A semiconducting polymers with conjugated diketopyrrolopyrrole (DPP) unit was developed for high performance ambipolar organic field-effect transistors (OFETs). We report electrical characteristics of DPP OFETs in various ways which measured transistor and inverter performance with various bias conditions and self-assembled monolayers (SAMs) treatment. Ambipolar DPP conjugated polymer OFETs showed high hole and electron mobility of μh=0.57 cm2V-1s-1 and μe=0.51 cm2V-1s-1 with O2 plasma treatment and 1-decanethiol SAMs treatment, respectively with annealing at 100°C. Contact resistance effect on mobilities was investigated by measuring contact resistance during device operation through gated four-point probe (gFPP) and simultaneous contact resistance extraction model directly from current voltage characteristics.

  12. Metal Contacts on Semiconducting Two-Dimension Crystals

    NASA Astrophysics Data System (ADS)

    Liu, Han; Neal, Adam; Du, Yuchen; Ye, Peide

    2013-03-01

    Semiconducting 2-D crystals, such as MoS2, WSe2, are viewed as promising candidates for electronic applications for their high carrier mobility, thermal stability, compatibility to CMOS process, and superior immunity to short channel effects. However, with the difficulty in ion implantation, the metal contacts on 2-D crystals are yet with large contact resistance, thus eliminates further device performance. We study different metal contacts from low work function to high work function metals on MoS2 and WSe2 crystals with various thicknesses and discuss the Fermi level pinning at the metal/semiconductor interface. Effective Schottky Barrier Heights (SBHs) are also measured. Molecular doping and dual-side contacts metals are performed as two tentative solutions to reduce the effective SBHs, and high-performance of field effect transistors are achieved by reduced contact resistance.

  13. Single-Chain Semiconducting Polymer Dots

    PubMed Central

    2015-01-01

    This work describes the preparation and validation of single-chain semiconducting polymer dots (sPdots), which were generated using a method based on surface immobilization, washing, and cleavage. The sPdots have an ultrasmall size of ∼3.0 nm as determined by atomic force microscopy, a size that is consistent with the anticipated diameter calculated from the molecular weight of the single-chain semiconducting polymer. sPdots should find use in biology and medicine as a new class of fluorescent probes. The FRET assay this work presents is a simple and rapid test to ensure methods developed for preparing sPdot indeed produced single-chain Pdots as designed. PMID:25521606

  14. Low bandgap semiconducting polymers for polymeric photovoltaics.

    PubMed

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study. PMID:26548402

  15. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography.

    PubMed

    Tulevski, George S; Franklin, Aaron D; Afzali, Ali

    2013-04-23

    The isolation of semiconducting carbon nanotubes (CNTs) to ultrahigh (ppb) purity is a prerequisite for their integration into high-performance electronic devices. Here, a method employing column chromatography is used to isolate semiconducting nanotubes to 99.9% purity. The study finds that by modifying the solution preparation step, both the metallic and semiconducting fraction are resolved and elute using a single surfactant system, allowing for multiple iterations. Iterative processing enables a far more rapid path to achieving the level of purities needed for high performance computing. After a single iteration, the metallic peak in the absorption spectra is completely attenuated. Although absorption spectroscopy is typically used to characterize CNT purity, it is found to be insufficient in quantifying solutions of high purity (>98 to 99%) due to low signal-to-noise in the metallic region of ultrahigh purity solutions. Therefore, a high throughput electrical testing method was developed to quantify the degree of separation by characterizing ∼4000 field-effect transistors fabricated from the separated nanotubes after multiple iterations of the process. The separation and characterization methods described here provide a path to produce the ultrahigh purity semiconducting CNT solutions needed for high performance electronics. PMID:23484490

  16. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics. PMID:25372930

  17. Predicting X-ray absorption spectra of semiconducting polymers for electronic structure and morphology characterization

    NASA Astrophysics Data System (ADS)

    Su, Gregory; Patel, Shrayesh; Pemmaraju, C. Das; Kramer, Edward; Prendergast, David; Chabinyc, Michael

    2015-03-01

    Core-level X-ray absorption spectroscopy (XAS) reveals important information on the electronic structure of materials and plays a key role in morphology characterization. Semiconducting polymers are the active component in many organic electronics. Their electronic properties are critically linked to device performance, and a proper understanding of semiconducting polymer XAS is crucial. Techniques such as resonant X-ray scattering rely on core-level transitions to gain materials contrast and probe orientational order. However, it is difficult to identify these transitions based on experiments alone, and complementary simulations are required. We show that first-principles calculations can capture the essential features of experimental XAS of semiconducting polymers, and provide insight into which molecular model, such as oligomers or periodic boundary conditions, are best suited for XAS calculations. Simulated XAS can reveal contributions from individual atoms and be used to visualize molecular orbitals. This allows for improved characterization of molecular orientation and scattering analysis. These predictions lay the groundwork for understanding how chemical makeup is linked to electronic structure, and to properly utilize experiments to characterize semiconducting polymers.

  18. Suppression of Nonlinear Interactions in Resonant Macroscopic Quantum Devices: The Example of the Solid-State Ring Laser Gyroscope

    SciTech Connect

    Schwartz, Sylvain; Feugnet, Gilles; Pocholle, Jean-Paul; Gutty, Francois; Bouyer, Philippe

    2008-05-09

    We report fine-tuning of nonlinear interactions in a solid-state ring laser gyroscope by vibrating the gain medium along the cavity axis. We demonstrate both experimentally and theoretically that nonlinear interactions vanish for some values of the vibration parameters, leading to quasi-ideal rotation sensing. We eventually point out that our conclusions can be mapped onto other subfields of physics such as ring-shaped superfluid configurations, where nonlinear interactions could be tuned by using Feshbach resonance.

  19. Efficient photovoltaic cells from semiconducting polymer heterojunctions

    NASA Astrophysics Data System (ADS)

    Jenekhe, Samson A.; Yi, Shujian

    2000-10-01

    Solar cells made from spin-coated bilayer thin-film heterojunctions of poly(p-phenylene vinylene) and poly(benzimidazobenzophenanthroline ladder) were found to have photovoltaic charge collection efficiency as high as 49%. The power conversion efficiency varied from 1.4% under sunlight illumination to 2.0% at the peak wavelength. A space-charge region around the polymer/polymer interface, Ohmic contacts at the electrodes, and complementary absorption bands of the semiconducting polymers, play important roles in the efficient charge collection in the photocells.

  20. Semiconducting conjugated polymer-inorganic tetrapod nanocomposites.

    PubMed

    Jung, Jaehan; Pang, Xinchang; Feng, Chaowei; Lin, Zhiqun

    2013-06-25

    Cadmium telluride (CdTe) tetrapods were synthesized via multiple injections of the Te precursor by utilizing bifunctional ligands. Subsequently, tetrapod-shaped semiconducting inorganic-organic nanocomposites (i.e., P3HT-CdTe tetrapod nanocomposites) were produced by directly grafting conjugated polymer ethynyl-terminated poly(3-hexylthiophene) (i.e., P3HT-≡) onto azide-functionalized CdTe tetrapods (i.e., CdTe-N3) via a catalyst-free click chemistry. The intimate contact between P3HT and CdTe tetrapod rendered the effective dispersion of CdTe tetrapods in nanocomposites and facilitated their efficient electronic interaction. The success of coupling reaction was confirmed by Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy. The grafting density of P3HT chains on the CdTe tetrapods was estimated by thermogravimetric analysis. The photophysical properties of P3HT-CdTe tetrapod nanocomposites were studied using UV-vis and photoluminescence spectroscopies. These intimate semiconducting conjugated polymer-tetrapod nanocomposites may offer a maximized interface between conjugated polymers and tetrapods for efficient charge separation and enhanced charge transport regardless of their orientation for potential application in hybrid solar cells with improved power conversion efficiency. PMID:23600796

  1. Label-free immunodetection with CMOS-compatible semiconducting nanowires.

    PubMed

    Stern, Eric; Klemic, James F; Routenberg, David A; Wyrembak, Pauline N; Turner-Evans, Daniel B; Hamilton, Andrew D; LaVan, David A; Fahmy, Tarek M; Reed, Mark A

    2007-02-01

    Semiconducting nanowires have the potential to function as highly sensitive and selective sensors for the label-free detection of low concentrations of pathogenic microorganisms. Successful solution-phase nanowire sensing has been demonstrated for ions, small molecules, proteins, DNA and viruses; however, 'bottom-up' nanowires (or similarly configured carbon nanotubes) used for these demonstrations require hybrid fabrication schemes, which result in severe integration issues that have hindered widespread application. Alternative 'top-down' fabrication methods of nanowire-like devices produce disappointing performance because of process-induced material and device degradation. Here we report an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrate the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. This approach eliminates the need for hybrid methods and enables system-scale integration of these sensors with signal processing and information systems. Additionally, the ability to monitor antibody binding and sense the cellular immune response in real time with readily available technology should facilitate widespread diagnostic applications. PMID:17268465

  2. Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

    2015-04-01

    High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a

  3. Doping Scheme of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  4. Response functions of semiconducting lithium indium diselenide

    NASA Astrophysics Data System (ADS)

    Lukosi, Eric; Chvala, Ondrej; Stowe, Ashley

    2016-06-01

    This paper presents the results of a computational investigation that determined the gamma-ray and neutron response functions of a new semiconducting material, 6LiInSe2, which is very sensitive to thermal neutrons. Both MCNP6 simulations and custom post-processing/simulation techniques were used to determine various detection properties of LISe. The computational study included consideration of energetic electron escape, the contribution from the activation of 115In and subsequent decay of 116In, triton and alpha particle escape from the 6Li reaction pathway, and the effect of incomplete charge collection when detecting neutrons via the 6Li reaction pathway. The result of neutron detection with incomplete charge collection was compared to experimental results and showed general agreement, where holes exhibit a lower mobility-lifetime product than electrons, as expected for compound semiconductors.

  5. semiconducting nanostructures: morphology and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

    2014-08-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

  6. Ordered Semiconducting Nitrogen-Graphene Alloys

    SciTech Connect

    Xiang, H. J.; Huang, B.; Li, Z. Y.; Wei, S. H.; Yang, J. L.; Gong, X. G.

    2012-01-01

    The interaction between substitutional nitrogen atoms in graphene is studied by performing first-principles calculations. The effective nearest-neighbor interaction between nitrogen dopants is found to be highly repulsive because of the strong electrostatic repulsion between nitrogen atoms. This interaction prevents the full nitrogen-carbon phase separation in nitrogen-doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pair configurations, whose stability can be attributed to the anisotropy in the charge redistribution induced by nitrogen doping. We reveal two stable, ordered, semiconducting N-doped graphene structures, C{sub 3}N and C{sub 12}N, through the cluster-expansion technique and particle-swarm optimization method. In particular, we show that C{sub 12}N has a direct band gap of 0.98 eV. The heterojunctions between C{sub 12}N and graphene nanoribbons might be a promising basis for organic solar cells.

  7. Ferromagnetism and semiconducting of boron nanowires

    PubMed Central

    2012-01-01

    More recently, motivated by extensively technical applications of carbon nanostructures, there is a growing interest in exploring novel non-carbon nanostructures. As the nearest neighbor of carbon in the periodic table, boron has exceptional properties of low volatility and high melting point and is stronger than steel, harder than corundum, and lighter than aluminum. Boron nanostructures thus are expected to have broad applications in various circumstances. In this contribution, we have performed a systematical study of the stability and electronic and magnetic properties of boron nanowires using the spin-polarized density functional calculations. Our calculations have revealed that there are six stable configurations of boron nanowires obtained by growing along different base vectors from the unit cell of the bulk α-rhombohedral boron (α-B) and β-rhombohedral boron (β-B). Well known, the boron bulk is usually metallic without magnetism. However, theoretical results about the magnetic and electronic properties showed that, whether for the α-B-based or the β-B-based nanowires, their magnetism is dependent on the growing direction. When the boron nanowires grow along the base vector [001], they exhibit ferromagnetism and have the magnetic moments of 1.98 and 2.62 μB, respectively, for the α-c [001] and β-c [001] directions. Electronically, when the boron nanowire grows along the α-c [001] direction, it shows semiconducting and has the direct bandgap of 0.19 eV. These results showed that boron nanowires possess the unique direction dependence of the magnetic and semiconducting behaviors, which are distinctly different from that of the bulk boron. Therefore, these theoretical findings would bring boron nanowires to have many promising applications that are novel for the boron bulk. PMID:23244063

  8. Nonlinear glass waveguide devices fabricated by femtosecond laser writing with thermal poling and waveguide modeling for silver ion exchange in glass

    NASA Astrophysics Data System (ADS)

    Li, Guangyu

    Integrated optics technology has led to the development of miniaturized optical devices that can offer high functionality on a single chip. This technology has proven useful for a host of applications, including telecommunications, sensing, navigation, quantum optics and astronomy. Complex integrated optical devices, such as lasers, frequency converters, filters and demultiplexers, have been developed in a variety of substrate materials, including crystals, glasses, polymers and semiconductors. This thesis contributes to the field of glass integrated optics with two primary additions: Direct waveguide writing, using femtosecond lasers, is combined with thermal poling to demonstrate electro-optic (EO) and quasi-phase matched (QPM), second-order, nonlinear, parametric waveguide devices in bulk fused silica for the first time. In particular, a 25.6 mm long waveguide EO modulator in bulk glass is reported that has an effective EO coefficient of 0.17 pm/V, which is the highest value obtained to date for a planar, glass, waveguide device. Frequency doubling (SHG) is also demonstrated in a QPM, glass, waveguide device where the chi(2) grating is produced using a new method for the selective erasure of a uniformly poled region. A 1064 nm to 532 nm conversion efficiency of approximately 8 x 10-6%W-1cm-2 is obtained for this device, and it is predicted that values several hundred times larger should be achievable through careful device optimization. The second contribution of this thesis is a systematic modeling study of the silver ion exchange process in a single-alkali (Na) glass based on first principles. It is shown for the first time that a Fickian diffusion analysis, combined with a concentration-dependent diffusion coefficient in the absence of free parameters, is able to predict 2-D refractive index waveguide profiles that are in relatively good agreement with measured results. Low loss, large diameter, ring resonators are also fabricated by silver ion exchange in

  9. Tunable surface plasmon devices

    DOEpatents

    Shaner, Eric A.; Wasserman, Daniel

    2011-08-30

    A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

  10. High temperature photoelectron emission and surface photovoltage in semiconducting diamond

    SciTech Connect

    Williams, G. T.; Cooil, S. P.; Roberts, O. R.; Evans, S.; Langstaff, D. P.; Evans, D. A.

    2014-08-11

    A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

  11. Uniformly spaced arrays of purely semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Falk, Abram; Kumar, Bharat; Tulevski, George; Farmer, Damon; Hannon, James; Han, Shu-Jen

    Patterning uniformly spaced arrays of carbon nanotubes (CNTs) is a key challenge for carbon electronics. Our group adopts a hybrid approach to meeting this goal. We use top-down lithography to pattern trenches on chips. We then use surface-selective chemical monolayers to facilitate the bottom-up assembly of solution-processed CNTs into these trenches. Previously, we showed large-scale integration of CNTs based on this approach, but modifications to this process have been needed in order to improve the yield and decrease the fraction of non-switching devices. Our latest results show a high degree of selectivity, alignment and yield of successfully placed CNTs at a 100 nm pitch. Electrical measurements confirm that these chemically placed CNTs are nearly 100% semiconducting and of similar quality to randomly dispersed ones. I will then discuss our strategies for increasing the CNT density and extending these results from chip- to wafer-scale electronics. email: alfalk@us.ibm.com.

  12. Two-dminensional exciton states in monolayer semiconducting phosphorus alotropes

    NASA Astrophysics Data System (ADS)

    Rocha, Alexandre R.; Villegas, Cesar E. P.

    During the last decade, novel two-dimensional (2D) semiconducting materials have been synthesized and characterised. As a result, there have been several theoretical and experimental proposals to incorporate 2D materials for designing next generation electronic and optoelectronics devices. In particular, it has been demonstrated that light absorption in phosphorus-based monolayers can span the whole visible spectrum, suggesting they could be used for optolectronic applications. A key ingredient for optolectronic applications is the presence of excitons and their subsequent diffusion along a donor material. This is influenced by the character of the different excitations taking place, as well as, the exciton binding energy. Therefore, In this work we use accurate many-body corrected density functional theory by means of GW-BSE methodology to elucidate the most important optical transitions, exciton energy spectrum as well as exciton extension in different types of phosphorene materials. In addition, we solve the Schrodinger equation for different 2D screened potentials and estimate the 2D exciton energy levels and radius extension. Finally, in order to assess further studies based on these systems, we provide a simple analityc expression for estimating 2D exciton energy levels. Research funded by FAPESP-Brazil.

  13. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

    SciTech Connect

    Kang, Youngho; Song, Hochul; Han, Seungwu; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi

    2014-03-01

    To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

  14. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    PubMed Central

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. PMID:27025784

  15. Enhanced x-ray detection sensitivity in semiconducting polymer diodes containing metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Mills, Christopher A.; Al-Otaibi, Hulayel; Intaniwet, Akarin; Shkunov, Maxim; Pani, Silvia; Keddie, Joseph L.; Sellin, Paul J.

    2013-07-01

    Semiconducting polymer X-radiation detectors are a completely new family of low-cost radiation detectors with potential application as beam monitors or dosimeters. These detectors are easy to process, mechanically flexible, relatively inexpensive, and able to cover large areas. However, their x-ray photocurrents are typically low as, being composed of elements of low atomic number (Z), they attenuate x-rays weakly. Here, the addition of high-Z nanoparticles is used to increase the x-ray attenuation without sacrificing the attractive properties of the host polymer. Two types of nanoparticles (NPs) are compared: metallic tantalum and electrically insulating bismuth oxide. The detection sensitivity of 5 µm thick semiconducting poly([9,9-dioctylfluorenyl-2,7-diyl]-co-bithiophene) diodes containing tantalum NPs is four times greater than that for the analogous NP-free devices; it is approximately double that of diodes containing an equal volume of bismuth oxide NPs. The x-ray induced photocurrent output of the diodes increases with an increased concentration of NPs. However, contrary to the results of theoretical x-ray attenuation calculations, the experimental current output is higher for the lower-Z tantalum diodes than the bismuth oxide diodes, at the same concentration of NP loading. This result is likely due to the higher tantalum NP electrical conductivity, which increases charge transport through the semiconducting polymer, leading to increased diode conductivity.

  16. Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

    PubMed

    Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

    2015-04-21

    High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption. PMID:25807291

  17. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    DOEpatents

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-11-05

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating a first low frequency acoustic wave within the borehole, wherein the first low frequency acoustic wave induces a linear and a nonlinear response in one or more features in the material that are substantially perpendicular to a radius of the borehole; directing a first sequence of high frequency pulses in a direction perpendicularly with respect to the longitudinal axis of the borehole into the material contemporaneously with the first acoustic wave; and receiving one or more second high frequency pulses at one or more receivers positionable in the borehole produced by an interaction between the first sequence of high frequency pulses and the one or more features undergoing linear and nonlinear elastic distortion due to the first low frequency acoustic wave to investigate the material surrounding the borehole.

  18. Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

    PubMed Central

    Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

    2009-01-01

    A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

  19. Trion electroluminescence from semiconducting carbon nanotubes.

    PubMed

    Jakubka, Florian; Grimm, Stefan B; Zakharko, Yuriy; Gannott, Florentina; Zaumseil, Jana

    2014-08-26

    Near-infrared emission from semiconducting single-walled carbon nanotubes (SWNTs) usually results from radiative relaxation of excitons. By binding an additional electron or hole through chemical or electrochemical doping, charged three-body excitons, so-called trions, are created that emit light at lower energies. The energy difference is large enough to observe weak trion photoluminescence from doped SWNTs even at room temperature. Here, we demonstrate strong trion electroluminescence from electrolyte-gated, light-emitting SWNT transistors with three different polymer-sorted carbon nanotube species, namely, (6,5), (7,5) and (10,5). The red-shifted trion emission is equal to or even stronger than the exciton emission, which is attributed to the high charge carrier density in the transistor channel. The possibility of trions as a radiative relaxation pathway for triplets and dark excitons that are formed in large numbers by electron-hole recombination is discussed. The ratio of trion to exciton emission can be tuned by the applied voltages, enabling voltage-controlled near-infrared light sources with narrow line widths that are solution-processable and operate at low voltages (<3 V). PMID:25029479

  20. Innate cation sensitivity in a semiconducting polymer.

    PubMed

    Althagafi, Talal M; Algarni, Saud A; Grell, Martin

    2016-09-01

    Water-gated organic thin film transistors (OTFTs) using the hole transporting semiconducting polymer, poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), show an innate response of their threshold voltage to the addition of divalent metal cations to the gating water, without deliberately introducing an ion-sensitive component. A similar threshold response is shown for several divalent cations, but is absent for monovalent cations. Response is absent for transistors using the inorganic semiconductor ZnO, or the similar organic semiconductor poly(3-hexylthiophene) (rrP3HT), instead of PBTTT. We assign innate cation sensitivity to residues of the organometallic Pd(0) complex used as catalyst in PBTTT synthesis which bears strong resemblance to typical metal chelating agents. Organometallic Pd(0) residues are absent from ZnO, and also from rrP3HT which is polymerised with a different type of catalyst. However, when Pd(0) complex is deliberately added to rrP3HT casting solutions, resulting OTFTs also display threshold response to a divalent cation. PMID:27343580

  1. Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

    PubMed

    Qin, Xiaojun; Peng, Fei; Yang, Feng; He, Xiaohui; Huang, Huixin; Luo, Da; Yang, Juan; Wang, Sheng; Liu, Haichao; Peng, Lianmao; Li, Yan

    2014-02-12

    The growth of semiconducting single-walled carbon nanotubes (s-SWNTs) on flat substrates is essential for the application of SWNTs in electronic and optoelectronic devices. We developed a flexible strategy to selectively grow s-SWNTs on silicon substrates using a ceria-supported iron or cobalt catalysts. Ceria, which stores active oxygen, plays a crucial role in the selective growth process by inhibiting the formation of metallic SWNTs via oxidation. The so-produced ultralong s-SWNT arrays are immediately ready for building field effect transistors. PMID:24392872

  2. Using nonlinear ac electrokinetics vortex flow to enhance catalytic activities of sol-gel encapsulated trypsin in microfluidic devices

    PubMed Central

    Wang, Shau-Chun; Chen, Hsiao-Ping; Lai, Yi-Wen; Chau, Lai-Kwan; Chuang, Yu-Chun; Chen, Yi-Jie

    2007-01-01

    A novel microstirring strategy is applied to accelerate the digestion rate of the substrate Nα-benzoyl-L-arginine-4-nitroanilide (L-BAPA) catalyzed by sol-gel encapsulated trypsin. We use an ac nonlinear electrokinetic vortex flow to stir the solution in a microfluidic reaction chamber to reduce the diffusion length between the immobilized enzyme and substrate in the solution. High-intensity nonlinear electroosmotic microvortices, with angular speeds in excess of 1 cm∕s, are generated around a small (∼1.2 mm) conductive ion exchange granule when ac electric fields (133 V∕cm) are applied across a miniature chamber smaller than 10 μl. Coupling between these microvortices and the on-and-off electrophoretic motion of the granule in low frequency (0.1 Hz) ac fields produces chaotic stream lines to stir substrate molecules sufficiently. We demonstrate that, within a 5-min digestion period, the catalytic reaction rate of immobilized trypsin increases almost 30-fold with adequate reproducibility (15%) due to sufficient stirring action through the introduction of the nonlinear electrokinetic vortices. In contrast, low-frequency ac electroosmotic flow without the granule, provides limited stirring action and increases the reaction rate approximately ninefold with barely acceptable reproducibility (30%). Dye molecules are used to characterize the increases in solute diffusivity in the reaction reservoir in which sol-gel particles are placed, with and without the presence of granule, and compared with the static case. The solute diffusivity enhancement data show respective increases of ∼30 and ∼8 times, with and without the presence of granule. These numbers are consistent with the ratios of the enhanced reaction rate. PMID:19693360

  3. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer

    NASA Astrophysics Data System (ADS)

    Colvin, V. L.; Schlamp, M. C.; Alivisatos, A. P.

    1994-08-01

    ELECTROLUMINESCENT devices have been developed recently that are based on new materials such as porous silicon1 and semiconducting polymers2,3. By taking advantage of developments in the preparation and characterization of direct-gap semiconductor nanocrystals4-6, and of electroluminescent polymers7, we have now constructed a hybrid organic/inorganic electroluminescent device. Light emission arises from the recombination of holes injected into a layer of semiconducting p-paraphenylene vinylene (PPV)8-10 with electrons injected into a multilayer film of cadmium selenide nanocrystals. Close matching of the emitting layer of nanocrystals with the work function of the metal contact leads to an operating voltage11 of only 4V. At low voltages emission from the CdSe layer occurs. Because of the quantum size effect19-24 the colour of this emission can be varied from red to yellow by changing the nanocrystal size. At higher voltages green emission from the polymer layer predominates. Thus this device has a degree of voltage tunability of colour.

  4. PREFACE: 16th International Conference on Microscopy of Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Walther, T.; Nellist, P. D.; Hutchison, J. L.; Cullis, A. G.

    2010-01-01

    This volume contains invited and contributed papers from the 16th international conference on 'Microscopy of Semiconducting Materials' held at the University of Oxford on 17-20 March 2009. The meeting was organised under the auspices of the Royal Microscopical Society with support by the Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. This conference series focuses on the most recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. It was attended by 139 delegates from 18 countries world-wide. As semiconductor devices shrink further both new routes of device processing and device characterisation need to be developed, and for the latter methods that offer subnanometre spatial resolution are particularly valuable. Electron microscopy in its various forms of imaging, diffraction and spectroscopy provides indispensable information on both microstructure and chemistry. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of quantification of the various signals recorded have been presented at this conference. Two examples of topics that have attracted a number of interesting studies at this meeting are the contrast interpretation in secondary electron images of cleaved semiconductor surfaces and the measurement of chemical composition on the nano-scale of quantum domain structures and devices investigated in cross-section. Each manuscript submitted for publication in this proceedings volume has been reviewed by at least two referees and was modified accordingly. Finally, 70 manuscripts were accepted for publication. The editors are very grateful to the following colleagues for their rapid and careful reviewing of the papers: M al Jassim, J Barnard, R Beanland, H

  5. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  6. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    SciTech Connect

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-10-08

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating within a borehole an intermittent low frequency vibration that propagates as a tube wave longitudinally to the borehole and induces a nonlinear response in one or more features in the material that are substantially perpendicular to a longitudinal axis of the borehole; generating within the borehole a sequence of high frequency pulses directed such that they travel longitudinally to the borehole within the surrounding material; and receiving, at one or more receivers positionable in the borehole, a signal that includes components from the low frequency vibration and the sequence of high frequency pulses during intermittent generation of the low frequency vibration, to investigate the material surrounding the borehole.

  7. Homo and heteroepitaxial growth and study of orientation-patterned GaP for nonlinear frequency conversion devices

    NASA Astrophysics Data System (ADS)

    Tassev, V. L.; Vangala, S.; Peterson, R.; Kimani, M.; Snure, M.; Markov, I.

    2016-03-01

    Frequency conversion in orientation-patterned quasi-phase matched materials is a leading approach for generating tunable mid- and long-wave coherent IR radiation for a wide variety of applications. A number of nonlinear optical materials are currently under intensive investigation. Due to their unique properties, chiefly wide IR transparency and high nonlinear susceptibility, GaAs and GaP are among the most promising. Compared to GaAs, GaP has the advantage of having higher thermal conductivity and significantly lower 2PA in the convenient pumping range of 1- 1.7 μm. HVPE growth of OPGaP, however, has encountered certain challenges: low quality and high price of commercially available GaP wafers; and strong parasitic nucleation during HVPE growth that reduces growth rate and aggravates layer quality, often leading to pattern overgrowth. Lessons learned from growing OPGaAs were not entirely helpful, leaving us to alternative solutions for both homoepitaxial growth and template preparation. We report repeatable one-step HVPE growth of up to 400 μm thick OPGaP with excellent domain fidelity deposited for first time on OPGaAs templates. The templates were prepared by wafer fusion bonding or MBE assisted polarity inversion technique. A close to equilibrium growth at such a large lattice mismatch (-3.6%) is itself noteworthy, especially when previously reported attempts (growth of OPZnSe on OPGaAs templates) at much smaller mismatch (+0.3%) have produced limited results. Combining the advantages of the two most promising materials, GaAs and GaP, is a solution that will accelerate the development of high power, tunable laser sources for the mid- and long-wave IR, and THz region.

  8. PREFACE: 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)

    NASA Astrophysics Data System (ADS)

    Walther, T.; Hutchison, John L.

    2013-11-01

    YRM logo This volume contains invited and contributed papers from the 18th international conference on 'Microscopy of Semiconducting Materials' held at St Catherine's College, University of Oxford, on 7-11 April 2013. The meeting was organised under the auspices of the Royal Microscopical Society and supported by the Institute of Physics as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and scanning probe microscopy with high spatial resolution. This time the meeting was attended by 109 delegates from 17 countries world-wide. We were welcomed by Professor Sir Peter Hirsch, who noted that this was the first of these conferences where Professor Tony Cullis was unable to attend, owing to ill-health. During the meeting a card containing greetings from many of Tony's friends and colleagues was signed, and duly sent to Tony afterwards. As semiconductor devices shrink further new routes for device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, electronic structure, chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two topics that have at this meeting again highlighted the interesting contributions of aberration corrected transmission electron microscopy were: contrast quantification of annular dark-field STEM images in terms of chemical composition (Z-contrast), sample thickness and strain, and the study of

  9. Pi-Stack Engineering of Semiconducting Perylene Tetracarboxylic Derivatives

    NASA Astrophysics Data System (ADS)

    Xue, Chenming

    D crystalline intra-layer order. Chapter 4, PDI pi-stacking order has been engineered in the crystalline phase. By introducing two structuring factors, a series of crystalline PDIs with finely tunable PDI pi-stacking order was obtained. The crystalline PDIs with exceptionally red-shifted lambda max were obtained. Several PDIs possess lambdamax values greater than any literature-reported ones. These materials can be excellent candidates in solar cell devices. In Chapter 5, new chiral main-chain PDI containing polymers were synthesized. These polymers can form intramolecular helical pi-stacks in diluted solutions. In Chapter 6, a novel synthetic route leading to unsymmetrical perylene tetracarboxylic derivatives has been developed. Based on this synthetic method, more perylene tetracarboxylic derivatives can be generated. In my research in this thesis, not only synthesis is an important part because it provides novel materials, but the characterization is critical as well. Infrared spectroscopy, Ultra-violet, fluorescence, differential scanning calorimetry, circular dichroism, polarized light microscopy, gel permeation chromatography, X-ray diffraction including both small angle and wide angle have been used. Additionally, molecular simulation is also very useful in design and obtaining details in molecular packing. Overall, the achievements in this research contribute a considerable advance in the field of generating semiconducting perylene tetracarboxylic derivatives which have versatile potential applications such as in solar cell devices, organic field effect transistors and light emitting diodes.

  10. Mechanical and Electromechanical Properties of Semiconducting and Metallic Nanowires

    NASA Astrophysics Data System (ADS)

    Bernal Montoya, Rodrigo A.

    Nanowires are envisioned as the building blocks of future electronics, sensing and actuation devices, nanostructured materials, among many applications. This technological potential arises because the properties of nanowires tend to be superior to those of bulk structures. However, unambiguous characterization of these properties has not been yet achieved, due to the challenging nature of nanoscale experimentation. In this thesis, we aimed at advancing the unambiguous characterization of mechanical and electromechanical properties of nanowires, by employing and improving MEMS-based (Microelectromechanical Systems) characterization technologies, which allow in-situ electron microscopy testing. Furthermore, we coupled the experimental results with atomistic simulations in order to attain fundamental understanding, and allow the determination of structure-property relations. This synergy between experiments and simulations also provides guidelines for improvements in both the experimental and computational techniques. In the context of semiconducting specimens, we characterized the elastic modulus of GaN nanowires. We find that below 20 nm in diameter, the nanowires display enhanced elastic moduli. Above this size, nanowires show bulk behavior. The measured trends are consistent both in experiments and simulations. The modulus enhancement is caused by local contraction of the atomic bonds near the surface of the nanowires, which leads to a locally higher modulus at the surface. For metallic specimens, we characterized the mechanical behavior of fivefold-twinned silver nanowires below 120 nm in diameter. To better match the loading condition between experiments and simulations, we implement a MEMS device for displacement-controlled testing, and subsequently employ it to characterize the cyclic plastic behavior of the nanowires. Experimentally, Bauschinger effect and partial recovery of the plastic deformation are observed. In-situ TEM experiments and atomistic

  11. Excitons in semiconducting superlattices, quantum wells, and ternary alloys

    SciTech Connect

    Sturge, M.D. . Dept. of Physics); Nahory, R.E.; Tamargo, M.C. )

    1992-06-01

    Semiconducting layered structures can now be fabricated with precisely defined layer thicknesses down to one monolayer. An example is the superlattice'' (SL) structure, in which to semiconductors with different band gaps are interleaved. The electronic and optical properties of the SL are quite different from those of the constitutents and offer interesting new possibilities both in device design and in basic physics. This proposal aims to improve our understanding of optically excited states in SL's, particularly in the so-called Type 2 indirect'' SL's in which in electron and hole created by optical excitation are separated both in real and in momentum space. We study these structures by time-resolved tunable laser spectroscopy, with and without external perturbations such as magnetic field, electric field, and uniaxial stress. In SLs with only a few atomic layers per period the familiar effective mass model'' of semiconductor states breaks down. We have made precise optical experiments on well-characterized material to test current first principles'' calculations of the band structure. Our work under this grant has shown that the material we are using is of sufficiently high quality to test the theoretical predictions. Comparison of theory and experiment provides a new and sensitive probe of the interface quality on a fine scale. Statistical analysis of the temperature dependence of the exciton decay dynamics provides complementary information. From a careful study of the exciton spectra of the recently discovered mixed type 1- type 2 CdTe/CdZnTe SLs we have obtained the band offset at the CdTe/CdZnTe interface to unprecedented accuracy.

  12. Coherent tools for physics-based simulation and characterization of noise in semiconductor devices oriented to nonlinear microwave circuit CAD

    NASA Astrophysics Data System (ADS)

    Riah, Zoheir; Sommet, Raphael; Nallatamby, Jean C.; Prigent, Michel; Obregon, Juan

    2004-05-01

    We present in this paper a set of coherent tools for noise characterization and physics-based analysis of noise in semiconductor devices. This noise toolbox relies on a low frequency noise measurement setup with special high current capabilities thanks to an accurate and original calibration. It relies also on a simulation tool based on the drift diffusion equations and the linear perturbation theory, associated with the Green's function technique. This physics-based noise simulator has been implemented successfully in the Scilab environment and is specifically dedicated to HBTs. Some results are given and compared to those existing in the literature.

  13. Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

    SciTech Connect

    Fukuhara, Mikio; Yoshida, Hajime

    2014-05-15

    We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.

  14. Optimization of thermoelectric performance in semiconducting polymers for understanding charge transport and flexible thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Glaudell, Anne; Chabinyc, Michael

    2014-03-01

    Organic electronic materials have been widely considered for a variety of energy conversion applications, from photovoltaics to LEDs. Only very recently have organic materials been considered for thermoelectric applications - converting between temperature gradients and electrical potential. The intrinsic disorder in semiconducting polymers leads to an inherently low thermal conductivity, a key parameter in thermoelectric performance. The ability to solution deposit on flexible substrates opens up niche applications including personal cooling and conformal devices. Here work is presented on the electrical conductivity and thermopower of thin film semiconducting polymers, including P3HT and PBTTT-C14. Thermoelectric properties are explored over a wide range of conductivities, from nearly insulating to beyond 100 S/cm, enabled by employing different doping mechanisms, including molecular charge-transfer doping with F4TCNQ and vapor doping with a fluoroalkyl trichlorosilane (FTS). Temperature-dependent measurements suggest competing charge transport mechanisms, likely due to the mixed ordered/disordered character of these polymers. These results show promise for organic materials for thermoelectric applications, and recent results on thin film devices will also be presented.

  15. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  16. Nonlinear diffraction in orientation-patterned semiconductors.

    PubMed

    Karpinski, Pawel; Chen, Xin; Shvedov, Vladlen; Hnatovsky, Cyril; Grisard, Arnaud; Lallier, Eric; Luther-Davies, Barry; Krolikowski, Wieslaw; Sheng, Yan

    2015-06-01

    This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors. PMID:26072847

  17. Hybrid semiconducting polymer nanoparticles as polarization-sensitive fluorescent probes

    PubMed Central

    Zeigler, Maxwell B.; Sun, Wei; Rong, Yu; Chiu, Daniel T.

    2013-01-01

    Much work has been done on collapsed chains of conjugated semiconducting polymers and their applications as fluorescent probes or sensors. On surfaces spin-coated with semiconducting polymers, excitation energy transfer along the polymer backbone can be used to quickly and efficiently funnel energy to chromophores with localized energy minima. If each chromophore is immobilized within its matrix, this can result in large fluorescence anisotropy. Through nanoprecipitation of a matrix polymer blended at low mass ratios with short-chain, hydrophobic, fluorescent semiconducting polymers, we take advantage of this large fluorescence anisotropy to make polarization-sensitive nanoparticles. These nanoparticles are small at approximately 7 nm in diameter; exhibit a high quantum yield of 0.75; and are easily functionalized to bind to protein targets. By exciting the nanoparticles with polarized light on a wide-field fluorescence microscope, we are able to monitor not only protein location, but also changes in their orientation. PMID:23895535

  18. Semiconducting glasses: A new class of thermoelectric materials?

    SciTech Connect

    Goncalves, A.P.; Vaney, J.B.; Lenoir, B.; Piarristeguy, A.; Pradel, A.; Monnier, J.; Ochin, P.; Godart, C.

    2012-09-15

    The deeper understanding of the factors that affect the dimensionless figure of merit, ZT, and the use of new synthetic methods has recently led to the development of novel systems with improved thermoelectric performances. Albeit up to now with ZT values lower than the conventional bulk materials, semiconducting glasses have also emerged as a new family of potential thermoelectric materials. This paper reviews the latest advances on semiconducting glasses for thermoelectric applications. Key examples of tellurium-based glasses, with high Seebeck coefficients, very low thermal conductivities and tunable electrical conductivities, are presented. ZT values as high as 0.2 were obtained at room temperature for several tellurium-based glasses with high copper concentrations, confirming chalcogenide semiconducting glasses as good candidates for high-performance thermoelectric materials. However, the temperature stability and electrical conductivity of the reported glasses are still not good enough for practical applications and further studies are still needed to enhance them. - Graphical abstract: Power factor as a function of the temperature for the Cu{sub 27.5}Ge{sub 2.5}Te{sub 70} and Cu{sub 30}As{sub 15}Te{sub 55} seniconducting glasses. Highlights: Black-Right-Pointing-Pointer A review of semiconducting glasses for thermoelectrics applications is presented. Black-Right-Pointing-Pointer The studied semiconducting glasses present very low thermal conductivities. Black-Right-Pointing-Pointer Composition can tune electrical conductivity and Seebeck coefficient. Black-Right-Pointing-Pointer ZT=0.2 is obtained at 300 K for different semiconducting glasses.

  19. Recent advances in organic semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2011-10-01

    Organic semiconductors have attracted attention due to their low cost, easy fabrication, and tunable properties. Applications of organic materials in thin-film transistors, solar cells, light-emitting diodes, sensors, and many other devices have been actively explored. Recent advances in organic synthesis, material processing, and device fabrication led to significant improvements in (opto)electronic device performance. However, a number of challenges remain. These range from lack of understanding of basic physics of intermolecular interactions that determine optical and electronic properties of organic materials to difficulties in controlling film morphology and stability. In this presentation, current state of the field will be reviewed and recent results related to charge carrier and exciton dynamics in organic thin films will be presented.[4pt] In collaboration with Whitney Shepherd, Mark Kendrick, Andrew Platt, Oregon State University; Marsha Loth and John Anthony, University of Kentucky.

  20. Three dimensional architectures of ultra-high density semiconducting nanowires deposited on chip.

    PubMed

    Ryan, Kevin M; Erts, Donats; Olin, Hakan; Morris, Michael A; Holmes, Justin D

    2003-05-21

    We report a "clean" and fast process, utilizing supercritical carbon dioxide, for producing ultrahigh densities, up to 10(12) nanowires per square centimeter, of ordered germanium nanowires on silicon and quartz substrates. Uniform mesoporous thin films were employed as templates for the nucleation and growth of unidirectional nanowire arrays orientated almost perpendicular to a substrate surface. Additionally, these nanocomposite materials display room-temperature photoluminescence (PL), the energy of which is dependent on the diameter of the encased nanowires. The ability to synthesis ultrahigh-density arrays of semiconducting nanowires on-chip is a key step in future "bottom-up" fabrication of multilayered device architectures for nanoelectronic and optoelectronic devices. PMID:12785861

  1. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes.

    PubMed

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  2. Identifying [corrected] signatures of photothermal current in a double-gated semiconducting nanotube.

    PubMed

    Buchs, G; Bagiante, S; Steele, G A

    2014-01-01

    The remarkable electrical and optical properties of single-walled carbon nanotubes have allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting single-walled carbon nanotube and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the doping profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from single-walled carbon nanotubes. PMID:25236955

  3. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Comfort, Everett; Lee, Ji Ung

    2016-06-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

  4. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors.

    PubMed

    Nielsen, Christian B; Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Bandiello, Enrico; Niazi, Muhammad R; Hanifi, David A; Sessolo, Michele; Amassian, Aram; Malliaras, George G; Rivnay, Jonathan; McCulloch, Iain

    2016-08-17

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous environment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure-property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, electrochromic properties, operational voltage, and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT-based devices, and show stability under aqueous operation without the need for formulation additives and cross-linkers. PMID:27444189

  5. Semiconducting monolayer materials as a tunable platform for excitonic solar cells.

    PubMed

    Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C

    2012-11-27

    The recent advent of two-dimensional monolayer materials with tunable optical properties and high carrier mobility offers renewed opportunities for efficient, ultrathin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict power conversion efficiency limits in the 10-20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, ultrathin solar cells in which unexplored exciton and carrier transport regimes are at play. PMID:23062107

  6. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    PubMed Central

    2016-01-01

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous environment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure–property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, electrochromic properties, operational voltage, and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT-based devices, and show stability under aqueous operation without the need for formulation additives and cross-linkers. PMID:27444189

  7. Identifiying signatures of photothermal current in a double-gated semiconducting nanotube

    NASA Astrophysics Data System (ADS)

    Buchs, G.; Bagiante, S.; Steele, G. A.

    2014-09-01

    The remarkable electrical and optical properties of single-walled carbon nanotubes have allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting single-walled carbon nanotube and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the doping profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from single-walled carbon nanotubes.

  8. Organic semiconducting single crystals as solid-state sensors for ionizing radiation.

    PubMed

    Fraboni, Beatrice; Ciavatti, Andrea; Basiricò, Laura; Fraleoni-Morgera, Alessandro

    2014-01-01

    So far, organic semiconductors have been mainly proposed as detectors for ionizing radiation in the indirect conversion approach, i.e. as scintillators, which convert ionizing radiation into visible photons, or as photodiodes, which detect visible photons coming from a scintillator and convert them into an electrical signal. The direct conversion of ionizing radiation into an electrical signal within the same device is a more effective process than indirect conversion, since it improves the signal-to-noise ratio and it reduces the device response time. We report here the use of Organic Semiconducting Single Crystals (OSSCs) as intrinsic direct ionizing radiation detectors, thanks to their stability, good transport properties and large interaction volume. Ionizing radiation X-ray detectors, based on low-cost solution-grown OSSCs, are here shown to operate at room temperature, providing a stable linear response with increasing dose rate in the ambient atmosphere and in high radiation environments. PMID:25485676

  9. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    PubMed Central

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  10. Exciton-exciton annihilation and relaxation pathways in semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Chmeliov, Jevgenij; Narkeliunas, Jonas; Graham, Matt W.; Fleming, Graham R.; Valkunas, Leonas

    2016-01-01

    We present a thorough analysis of one- and two-color transient absorption measurements performed on single- and double-walled semiconducting carbon nanotubes. By combining the currently existing models describing exciton-exciton annihilation--the coherent and the diffusion-limited ones--we are able to simultaneously reproduce excitation kinetics following both E11 and E22 pump conditions. Our simulations revealed the fundamental photophysical behavior of one-dimensional coherent excitons and non-trivial excitation relaxation pathways. In particular, we found that after non-linear annihilation a doubly-excited exciton relaxes directly to its E11 state bypassing the intermediate E22 manifold, so that after excitation resonant with the E11 transition, the E22 state remains unpopulated. A quantitative explanation for the observed much faster excitation kinetics probed at E22 manifold, comparing to those probed at the E11 band, is also provided.

  11. Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

    SciTech Connect

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Hahm, Jong-in

    2015-10-12

    We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.

  12. Nonlinear Hysteretic Torsional Waves.

    PubMed

    Cabaret, J; Béquin, P; Theocharis, G; Andreev, V; Gusev, V E; Tournat, V

    2015-07-31

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters. PMID:26274421

  13. Nonlinear Hysteretic Torsional Waves

    NASA Astrophysics Data System (ADS)

    Cabaret, J.; Béquin, P.; Theocharis, G.; Andreev, V.; Gusev, V. E.; Tournat, V.

    2015-07-01

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

  14. Semiconducting materials for photoelectrochemical energy conversion

    NASA Astrophysics Data System (ADS)

    Sivula, Kevin; van de Krol, Roel

    2016-02-01

    To achieve a sustainable society with an energy mix primarily based on solar energy, we need methods of storing energy from sunlight as chemical fuels. Photoelectrochemical (PEC) devices offer the promise of solar fuel production through artificial photosynthesis. Although the idea of a carbon-neutral energy economy powered by such ‘artificial leaves’ is intriguing, viable PEC energy conversion on a global scale requires the development of devices that are highly efficient, stable and simple in design. In this Review, recently developed semiconductor materials for the direct conversion of light into fuels are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance as photoelectrodes in PEC cells. The processes of light absorption, charge separation and transport, and suitable energetics for energy conversion in PEC devices are emphasized. Both the advantageous and unfavourable aspects of multinary oxides, oxynitrides, chalcogenides, classic semiconductors and carbon-based semiconductors are critically considered on the basis of their experimentally demonstrated performance and predicted properties.

  15. Semiconducting boron carbide thin films: Structure, processing, and diode applications

    NASA Astrophysics Data System (ADS)

    Bao, Ruqiang

    The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

  16. Evaluation of polarization rotation in the scattering responses from individual semiconducting oxide nanorods

    PubMed Central

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Monahan, Brian; Hahm, Jong-in

    2016-01-01

    We investigate the interaction of visible light with the solid matters of semiconducting oxide nanorods (NRs) of zinc oxide (ZnO), indium tin oxide (ITO), and zinc tin oxide (ZTO) at the single nanomaterial level. We subsequently identify an intriguing, material-dependent phenomenon of optical rotation in the electric field oscillation direction of the scattered light by systematically controlling the wavelength and polarization direction of the incident light, the NR tilt angle, and the analyzer angle. This polarization rotation effect in the scattered light is repeatedly observed from the chemically pure and highly crystalline ZnO NRs, but absent on the chemically doped NR variants of ITO and ZTO under all measurement circumstances. We further elucidate that the phenomenon of polarization rotation detected from single ZnO NRs is affected by the NR tilt angle, while the phenomenon itself occurs irrespective of the wavelength and incident polarization direction of the visible light. Combined with the widespread optical and optoelectronic use of the semiconducting oxide nanomaterials, these efforts may provide much warranted fundamental bases to tailor material-specific, single nanomaterial-driven, optically modulating functionalities which, in turn, can be beneficial for the realization of high-performance integrated photonic circuits and miniaturized bio-optical sensing devices. PMID:27158560

  17. Evaluation of polarization rotation in the scattering responses from individual semiconducting oxide nanorods

    NASA Astrophysics Data System (ADS)

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Monahan, Brian; Hahm, Jong-in

    2016-04-01

    We investigate the interaction of visible light with the solid matters of semiconducting oxide nanorods (NRs) of zinc oxide (ZnO), indium tin oxide (ITO), and zinc tin oxide (ZTO) at the single nanomaterial level. We subsequently identify an intriguing, material-dependent phenomenon of optical rotation in the electric field oscillation direction of the scattered light by systematically controlling the wavelength and polarization direction of the incident light, the NR tilt angle, and the analyzer angle. This polarization rotation effect in the scattered light is repeatedly observed from the chemically pure and highly crystalline ZnO NRs, but absent on the chemically doped NR variants of ITO and ZTO under all measurement circumstances. We further elucidate that the phenomenon of polarization rotation detected from single ZnO NRs is affected by the NR tilt angle, while the phenomenon itself occurs irrespective of the wavelength and incident polarization direction of the visible light. Combined with the widespread optical and optoelectronic use of the semiconducting oxide nanomaterials, these efforts may provide much warranted fundamental bases to tailor material-specific, single nanomaterial-driven, optically modulating functionalities which, in turn, can be beneficial for the realization of high-performance integrated photonic circuits and miniaturized bio-optical sensing devices.

  18. Optimal wide-area monitoring and nonlinear adaptive coordinating neurocontrol of a power system with wind power integration and multiple FACTS devices.

    PubMed

    Qiao, Wei; Venayagamoorthy, Ganesh K; Harley, Ronald G

    2008-01-01

    Wide-area coordinating control is becoming an important issue and a challenging problem in the power industry. This paper proposes a novel optimal wide-area coordinating neurocontrol (WACNC), based on wide-area measurements, for a power system with power system stabilizers, a large wind farm and multiple flexible ac transmission system (FACTS) devices. An optimal wide-area monitor (OWAM), which is a radial basis function neural network (RBFNN), is designed to identify the input-output dynamics of the nonlinear power system. Its parameters are optimized through particle swarm optimization (PSO). Based on the OWAM, the WACNC is then designed by using the dual heuristic programming (DHP) method and RBFNNs, while considering the effect of signal transmission delays. The WACNC operates at a global level to coordinate the actions of local power system controllers. Each local controller communicates with the WACNC, receives remote control signals from the WACNC to enhance its dynamic performance and therefore helps improve system-wide dynamic and transient performance. The proposed control is verified by simulation studies on a multimachine power system. PMID:18206349

  19. The detection of terahertz waves by semimetallic and by semiconducting materials

    NASA Astrophysics Data System (ADS)

    Gouider, F.; Nachtwei, G.; Brüne, C.; Buhmann, H.; Vasilyev, Yu. B.; Salman, M.; Könemann, J.; Buckle, P. D.

    2011-01-01

    We present a survey of photoresponse (PR) measurements of various devices containing quantum wells (QWs) of HgTe of various widths dQW and of InSb. By varying dQW for HgTe, the material properties of the QW material change from semiconducting to semimetallic as dQW is increased above a value of about 6nm. We have studied the PR of devices made from CdxHg1-xTe/HgTe/CdxHg1-xTe wafers with values of the QW width in the range of 6 nm≤dQW≤21 nm. Only for samples with semimetallic HgTe QWs, a measurable PR could be detected. However, our investigations of samples made from AlxIn1-xSb/InSb/AlxIn1-xSb wafers gave evidence that a measurable PR also can appear from devices with a semiconducting QW. Both cyclotron-resonant (CR) and nonresonant (bolometric, BO) interaction mechanisms can contribute to the PR signal. Whereas the CR contribution is dominant in AlxIn1-xSb/InSb/AlxIn1-xSb samples, in CdxHg1-xTe/HgTe/CdxHg1-xTe samples the behavior is more complex. In a sample with dQW=8 nm, the PR is clearly dominated by the BO contribution. In the PR of another sample of dQW=12 nm, both contributions (BO and CR) are present. The sample of dQW=21 nm shows a PR with not clearly separable BO and CR contributions.

  20. Semiconducting organic-inorganic nanocomposites by intimately tethering conjugated polymers to inorganic tetrapods.

    PubMed

    Jung, Jaehan; Yoon, Young Jun; Lin, Zhiqun

    2016-04-28

    Semiconducting organic-inorganic nanocomposites were judiciously crafted by placing conjugated polymers in intimate contact with inorganic tetrapods via click reaction. CdSe tetrapods were first synthesized by inducing elongated arms from CdSe zincblende seeds through seed-mediated growth. The subsequent effective inorganic ligand treatment, followed by reacting with short bifunctional ligands, yielded azide-functionalized CdSe tetrapods (i.e., CdSe-N3). Finally, the ethynyl-terminated conjugated polymer poly(3-hexylthiophene) (i.e., P3HT-[triple bond, length as m-dash]) was tethered to CdSe-N3 tetrapods via a catalyst-free alkyne-azide cycloaddition, forming intimate semiconducting P3HT-CdSe tetrapod nanocomposites. Intriguingly, the intimate contact between P3HT and CdSe tetrapod was found to not only render the effective dispersion of CdSe tetrapods in the P3HT matrix, but also facilitate the efficient electronic interaction between these two semiconducting constituents. The successful anchoring of P3HT chains onto CdSe tetrapods was substantiated through Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy measurements. Moreover, the absorption and photoluminescence studies further corroborated the intimate tethering between P3HT and CdSe tetrapods. The effect of the type of bifunctional ligands (i.e., aryl vs. aliphatic ligands) and the size of tetrapods on the device performance of hybrid organic-inorganic solar cells was also scrutinized. Interestingly, P3HT-CdSe tetrapod nanocomposites produced via the use of an aryl bifunctional ligand (i.e., 4-azidobenzoic acid) exhibited an improved photovoltaic performance compared to that synthesized with their aliphatic ligand counterpart (i.e., 5-bromovaleric acid). Clearly, the optimal size of CdSe tetrapods ensuring the effective charge transport in conjunction with the good dispersion of CdSe tetrapods rendered an improved device performance. We envision that the click

  1. Implication of Fluorine Atom on Electronic Properties, Ordering Structures, and Photovoltaic Performance in Naphthobisthiadiazole-Based Semiconducting Polymers.

    PubMed

    Kawashima, Kazuaki; Fukuhara, Tomohiro; Suda, Yousuke; Suzuki, Yasuhito; Koganezawa, Tomoyuki; Yoshida, Hiroyuki; Ohkita, Hideo; Osaka, Itaru; Takimiya, Kazuo

    2016-08-17

    The development of semiconducting polymers is imperative to improve the performance of polymer-based solar cells (PSCs). In this study, new semiconducting polymers based on naphtho[1,2-c:5,6-c']bis[1,2,5]thiadiazole (NTz), PNTz4TF2 and PNTz4TF4, having 3,3'-difluoro-2,2'-bithiophene and 3,3',4,4'-tetrafluoro-2,2'-bithiophene, respectively, are designed and synthesized. These polymers possess a deeper HOMO energy level than their counterpart, PNTz4T, which results in higher open-circuit voltages in solar cells. This concequently reduces the photon energy loss that is one of the most important issues surrounding PSCs. The PNTz4TF4 cell exhibits up to 6.5% power conversion efficiency (PCE), whereas the PNTz4TF2 cell demonstrates outstanding device performance with as high as 10.5% PCE, which is quite high for PSCs. We further discuss the performances of the PSCs based on these polymers by correlating the charge generation and recombination dynamics with the polymer structure and ordering structure. We believe that the results provide new insights into the design of semiconducting polymers and that there is still much room for improvement of PSC efficiency. PMID:27448181

  2. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  3. Molecular dynamics simulations for the study of optical properties in conjugated semiconducting molecules

    NASA Astrophysics Data System (ADS)

    Wildman, Jack; Denis, Jean-Christophe; Repiščák, Peter; Paterson, Martin J.; Galbraith, Ian

    Conformational disorder of conjugated polymers strongly influences their optical and electronic properties. Molecular Dynamics (MD) simulations can provide a quantitative understanding of these effects. Given the ever-expanding range of molecules with potential for device applications, it is critical to systematically establish accurate MD parameters for such simulations. We present an experimentally verified, general and optimised procedure, based on a computationally inexpensive methodology for generating the required MD parameters for conjugated molecules. By combining a large sample (~1000) of MD generated conformations with DFT calculations for the resulting electronic states we can explore the influence of conformational disorder on the optical properties. Using this scheme, we determine the effect of conformational variation on both linear and two-photon absorption spectra in a number of different conjugated semiconducting oligomers. Our results indicate that, while there exists significant inhomogeneous broadening in the linear absorption, there is only a weak conformational influence on the two-photon absorption spectrum.

  4. Superconducting proximity effect in superconductor / semiconducting-carbon-nanotube / superconductor junctions.

    NASA Astrophysics Data System (ADS)

    Barbara, Paola

    2005-03-01

    We measure the proximity effect in devices made of two superconducting electrodes bridged by a 3-micrometer long semiconducting carbon nanotube. The electrodes are made of a Pd/Nb bilayer and the junctions are fabricated by using standard photolithography [1]. The superconducting proximity effect manifests itself with a peak in the low-bias differential conductance due to Andreev reflection at the superconductor/carbon nanotube interfaces. Application of a gate voltage allows the transparency of the junction to be tuned from high (Andreev reflection) to low (tunneling) [2]. We have studied the temperature dependence of the features in each regime. This work is supported by the NSF (DMR-0239721) and by the Research Corporation. [1] A. Tselev, K. Hatton, M. S. Fuhrer, M. Paranjape and P. Barbara, Nanotechnology 15, 1475 (2004). [2] A. F. Morpurgo, J. Kong, C. M. Marcus, and H. Dai, Science 286, 263 (1999).

  5. Color tunable light-emitting diodes based on copper doped semiconducting nanocrystals

    NASA Astrophysics Data System (ADS)

    Bhaumik, Saikat; Ghosh, Batu; Pal, Amlan J.

    2011-08-01

    We have introduced copper-doped semiconducting nanocrystals in light-emitting diodes (LEDs). Characteristics of the devices show that electroluminescence (EL) emission in these LEDs is color tunable. In copper-doped ZnS nanocrystals in the core and Zn1-xCdxS host as a shell-layer, photoluminescence (PL) arises from a transition from conduction band-edge of the host to 3d-levels of copper-ions. The PL of the nanocrystals and hence the EL of LEDs based on such nanostructures become tunable by varying the Cd-content in Zn-Cd-S alloys, that is, Zn1-xCdxS with different values of x, which changes the conduction band-edge of the host.

  6. Studies of ferromagnetic semiconducting hybrid structures

    NASA Astrophysics Data System (ADS)

    Cheon, Miyeon

    2006-04-01

    spintronic devices. The exchange bias effect with antiferromagnetic Cr cap layers on small size mesas resulted in significant enhancement of ferromagnetism and the effect was more clear in samples where significant demagnetizing effect is expected. We have studied also several different spintronic device structures. We have grown epitaxial MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures, spin Bragg reflectors with a periodic magnetic bars and FRITD structures with different conditions and studied their properties.

  7. An alternative approach to charge transport in semiconducting electrodes

    NASA Technical Reports Server (NTRS)

    Thomchick, J.; Buoncristiani, A. M.

    1980-01-01

    The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

  8. Characteristic features of an ionization system with semiconducting cathode

    NASA Astrophysics Data System (ADS)

    Salamov, B. G.; Altındal, Ş.; Özer, M.; Çolakoğlu, K.; Bulur, E.

    1998-06-01

    The characteristic features of a dc discharge generated between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.

  9. Morphology control in biphasic hybrid systems of semiconducting materials.

    PubMed

    Mathias, Florian; Fokina, Ana; Landfester, Katharina; Tremel, Wolfgang; Schmid, Friederike; Char, Kookheon; Zentel, Rudolf

    2015-06-01

    Simple blends of inorganic nanocrystals and organic (semiconducting) polymers usually lead to macroscopic segregation. Thus, such blends typically exhibit inferior properties than expected. To overcome the problem of segregation, polymer coated nanocrystals (nanocomposites) have been developed. Such nanocomposites are highly miscible within the polymer matrix. In this Review, a summary of synthetic approaches to achieve stable nanocomposites in a semiconducting polymer matrix is presented. Furthermore, a theoretical background as well as an overview concerning morphology control of inorganic NCs in polymer matrices are provided. In addition, the morphologic behavior of highly anisotropic nanoparticles (i.e. liquid crystalline phase formation of nanorod-composites) and branched nanoparticles (spatial orientation of tetrapods) is described. Finally, the morphology requirements for the application of inorganic/organic hybrid systems in light emitting diodes and solar cells are discussed, and potential solutions to achieve the required morphologies are provided. PMID:25737161

  10. The high-pressure semiconducting phase of LiBC

    NASA Astrophysics Data System (ADS)

    Zhang, Meiguang

    2016-04-01

    A high-pressure hexagonal semiconducting phase (space group P63mc , 2f.u./cell) of LiBC stable above 108 GPa was predicted through first-principles calculations combined with unbiased swarm structure searching techniques. This new phase consisted of three-dimensional B-C networks which originate from the dramatic out-of-plane distortions of the graphene-like B-C sublattice in the low-pressure P63/mmc phase under compression. Contrary to the metallizations of LiBC under high pressure previously proposed, the resulting three-dimensional B-C framework lacks the system of π bonds with mobile electrons and has more localized electrons, as a result of the semiconducting nature of this high-pressure LiBC phase.

  11. Current-voltage characteristics and parameter retrieval of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Z. Y.; Jin, C. H.; Liang, X. L.; Chen, Q.; Peng, L.-M.

    2006-02-01

    Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.

  12. Transport properties in semiconducting NbS{sub 2} nanoflakes

    SciTech Connect

    Huang, Y. H.; Chen, R. S. Ho, C. H.; Peng, C. C.; Huang, Y. S.

    2014-09-01

    The electronic transport properties in individual niobium disulphide (NbS{sub 2}) nanoflakes mechanically exfoliated from the bulk crystal with three rhombohedral (3R) structure grown by chemical vapor transport were investigated. It is found that the conductivity values of the single-crystalline nanoflakes are approximately two orders of magnitude lower than that of their bulk counterparts. Temperature-dependent conductivity measurements show that the 3R-NbS{sub 2} nanoflakes exhibit semiconducting transport behavior, which is also different from the metallic character in the bulk crystals. In addition, the noncontinuous conductivity variations were observed at the temperature below 180 K for both the nanoflakes and the bulks, which is attributed to the probable charge density wave transition. The photoconductivities in the semiconducting nanoflakes were also observed under the excitation at 532 nm wavelength. The probable mechanisms resulting in the different transport behaviors between the NbS{sub 2} nanostructure and bulk were discussed.

  13. Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

    PubMed

    Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

    2015-04-01

    We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy. PMID:25692678

  14. Semiconducting organic-inorganic nanocomposites by intimately tethering conjugated polymers to inorganic tetrapods

    NASA Astrophysics Data System (ADS)

    Jung, Jaehan; Yoon, Young Jun; Lin, Zhiqun

    2016-04-01

    Semiconducting organic-inorganic nanocomposites were judiciously crafted by placing conjugated polymers in intimate contact with inorganic tetrapods via click reaction. CdSe tetrapods were first synthesized by inducing elongated arms from CdSe zincblende seeds through seed-mediated growth. The subsequent effective inorganic ligand treatment, followed by reacting with short bifunctional ligands, yielded azide-functionalized CdSe tetrapods (i.e., CdSe-N3). Finally, the ethynyl-terminated conjugated polymer poly(3-hexylthiophene) (i.e., P3HT-&z.tbd;) was tethered to CdSe-N3 tetrapods via a catalyst-free alkyne-azide cycloaddition, forming intimate semiconducting P3HT-CdSe tetrapod nanocomposites. Intriguingly, the intimate contact between P3HT and CdSe tetrapod was found to not only render the effective dispersion of CdSe tetrapods in the P3HT matrix, but also facilitate the efficient electronic interaction between these two semiconducting constituents. The successful anchoring of P3HT chains onto CdSe tetrapods was substantiated through Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy measurements. Moreover, the absorption and photoluminescence studies further corroborated the intimate tethering between P3HT and CdSe tetrapods. The effect of the type of bifunctional ligands (i.e., aryl vs. aliphatic ligands) and the size of tetrapods on the device performance of hybrid organic-inorganic solar cells was also scrutinized. Interestingly, P3HT-CdSe tetrapod nanocomposites produced via the use of an aryl bifunctional ligand (i.e., 4-azidobenzoic acid) exhibited an improved photovoltaic performance compared to that synthesized with their aliphatic ligand counterpart (i.e., 5-bromovaleric acid). Clearly, the optimal size of CdSe tetrapods ensuring the effective charge transport in conjunction with the good dispersion of CdSe tetrapods rendered an improved device performance. We envision that the click-reaction strategy enabled by

  15. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  16. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes.

    PubMed

    Rother, Marcel; Schießl, Stefan P; Zakharko, Yuriy; Gannott, Florentina; Zaumseil, Jana

    2016-03-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  17. Wafer-Scale Monolayer Films of Semiconducting Metal Dichalcogenides for High-Performance Electronics

    NASA Astrophysics Data System (ADS)

    Xie, Saien; Kang, Kibum; Huang, Lujie; Han, Yimo; Huang, Pinshane; Mak, Kin Fai; Kim, Cheol-Joo; Muller, David; Park, Jiwoong

    2015-03-01

    Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have shown their potential in electronics, optoelectronic and valleytronis. However, large-scale growth methods reported to date have only produced materials with limited structural and electrical uniformity, hindering further technological applications. Here we present a 4-inch scale growth of continuous monolayer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) films that show excellent structural and electrical uniformity over the entire wafer using metal-organic chemical vapor deposition. The resulting monolayer films show high mobility of 30 cm2/Vs at room temperature, as well as the phonon-limited transport for MoS2, regardless of the channel length and device location. They allow for the batch fabrication of monolayer MoS2 field effect transistors with a 99% yield, which display spatially-uniform n-type transistor operation with a high on/off ratio. We further demonstrate the multi-level growth and fabrication of vertically-stacked monolayer MoS2 films and devices, which could enable the development of novel three-dimensional circuitry and device integration.

  18. Electronic structure and quantum transport properties of metallic and semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Simbeck, Adam J.

    The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

  19. Unsymmetrical squaraines for nonlinear optical materials

    NASA Technical Reports Server (NTRS)

    Marder, Seth R. (Inventor); Chen, Chin-Ti (Inventor); Cheng, Lap-Tak (Inventor)

    1996-01-01

    Compositions for use in non-linear optical devices. The compositions have first molecular electronic hyperpolarizability (.beta.) either positive or negative in sign and therefore display second order non-linear optical properties when incorporated into non-linear optical devices.

  20. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGESBeta

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  1. Electroexplosive device

    NASA Technical Reports Server (NTRS)

    Menichelli, V. J. (Inventor)

    1978-01-01

    An electroexplosive device is presented which employs a header having contact pins hermetically sealed with glass passing through from a connector end of the header to a cavity filled with a shunt layer of a new nonlinear resistive composition and a heat-sink layer of a new dielectric composition having good thermal conductivity and capacity. The nonlinear resistive layer and the heat-sink layer are prepared from materials by mixing with a low temperature polymerizing resin. The resin is dissolved in a suitable solvent and later evaporated. The resultant solid composite is ground into a powder, press formed into the header and cured (polymerized) at about 250 to 300 F.

  2. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  3. Design of semiconducting indacenodithiophene polymers for high performance transistors and solar cells.

    PubMed

    McCulloch, Iain; Ashraf, Raja Shahid; Biniek, Laure; Bronstein, Hugo; Combe, Craig; Donaghey, Jenny E; James, David I; Nielsen, Christian B; Schroeder, Bob C; Zhang, Weimin

    2012-05-15

    The prospect of using low cost, high throughput material deposition processes to fabricate organic circuitry and solar cells continues to drive research towards improving the performance of the semiconducting materials utilized in these devices. Conjugated aromatic polymers have emerged as a leading candidate semiconductor material class, due to their combination of their amenability to processing and reasonable electrical and optical performance. Challenges remain, however, to further improve the charge carrier mobility of the polymers for transistor applications and the power conversion efficiency for solar cells. This optimization requires a clear understanding of the relationship between molecular structure and both electronic properties and thin film morphology. In this Account, we describe an optimization process for a series of semiconducting polymers based on an electron rich indacenodithiophene aromatic backbone skeleton. We demonstrate the effect of bridging atoms, alkyl chain functionalization, and co-repeating units on the morphology, molecular orbital energy levels, charge carrier mobility, and solar cell efficiencies. This conjugated unit is extremely versatile with a coplanar aromatic ring structure, and the electron density can be manipulated by the choice of bridging group between the rings. The functionality of the bridging group also plays an important role in the polymer solubility, and out of plane aliphatic chains present in both the carbon and silicon bridge promote solubility. This particular polymer conformation, however, typically suppresses long range organization and crystallinity, which had been shown to strongly influence charge transport. In many cases, polymers exhibited both high solubility and excellent charge transport properties, even where there was no observable evidence of polymer crystallinity. The optical bandgap of the polymers can be tuned by the combination of the donating power of the bridging unit and the electron

  4. Nuclear relaxation measurements in organic semiconducting polymers for application to organic spintronics

    NASA Astrophysics Data System (ADS)

    Thenell, E. F.; Limes, M. E.; Sorte, E. G.; Vardeny, Z. V.; Saam, B.

    2015-01-01

    NMR measurements of spin-lattice relaxation of hydrogen nuclei in two prototype organic semiconducting solids, MEH-PPV and DOO-PPV, were carried out for temperatures between 4.2 K and room temperature, and for applied magnetic fields between 1.25 and 4.7 T. These π -conjugated polymers are of interest for use as the active semiconducting layer in spintronic devices. They typically exhibit weak spin-orbit coupling, and the interaction with inhomogeneous hyperfine fields generated by the nuclear spins plays a significant, if not dominant, role in the spin coherence and spin relaxation of electronic charge carriers. Our studies were conducted on unbiased bulk material with no photo-illumination. The characteristic 1H longitudinal relaxation times in these materials ranges from hundreds of milliseconds to >1000 s, and are predominantly nonmonoexponential. We present the data both in terms of a recovery time, T1 /2, corresponding to 50% recovery of thermal magnetization from saturation and in terms of a "T1 spectrum" produced via a numerical Laplace transform of the time-domain data. The evidence best supports relaxation to paramagnetic centers (radicals) mediated by nuclear spin diffusion as the primary mechanism: the observed relaxation is predominantly nonmonoexponential, and a characteristic T1 minimum as a function of temperature is apparent for both materials somewhere between 77 K and room temperature. The paramagnetic centers may be somewhat-delocalized charge-carrier pairs (i.e., polarons) along the polymer backbone, although the concentration in an unbiased sample (no carrier injection) should be very low. Alternatively, the centers may be localized defects, vacancies, or impurities. Our results may also be used to judge the feasibility of Overhauser-type dynamic nuclear polarization from polarized charge carriers or optically pumped exciton states.

  5. P-type Semiconducting Behavior of BaSn1-xRuxO3 system

    NASA Astrophysics Data System (ADS)

    Kwon, Hyukwoo; Shin, Juyeon; Char, Kookrin

    2015-03-01

    BaSnO3 is a promising transparent perovskite oxide semiconductor due to its high mobility and chemical stability. Exploiting such properties, we have applied BaSnO3 to the field effect, the 2-dimensional electron gas, and the pn-junction devices. In spite of the success of the K-doped BaSnO3 as a p-type doped, its carrier density at room temperature is rather small due to its high activation energy of about 0.5 eV. In continuation of our previous study on SrSn1-xRuxO3 system, we studied the p-type semiconducting behavior of BaSn1-xRuxO3 system. We have epitaxially grown the BaSn1-xRuxO3 (0 <=x <=0.12) thin films by pulsed laser deposition. X-ray diffraction measurements show that the films maintain a single phase over the entire doping range and the lattice constants of the system decrease monotonously as the doping increases. Transport measurements show that the films are semiconducting and their resistivities dramatically decrease as the Ru doping increases. Hall measurement data show that the charge carriers are p-type and its corresponding mobility values vary from 0.3 ~ 0.04 cm2/V .s, depending on the doping rate. The hole carrier densities, measured to be 1017 ~ 1019 /cm3, are larger than those of K-doped BaSnO3. Using BaSn1-xRuxO3 and Ba1-xLaxSnO3 as p-type and n-type semiconductors, we will fabricate pn-junctions and report its performance.

  6. Process for separating metallic from semiconducting single-walled carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Sun, Ya-Ping (Inventor)

    2008-01-01

    A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes.

  7. Enhanced ambipolar charge injection with semiconducting polymer/carbon nanotube thin films for light-emitting transistors.

    PubMed

    Gwinner, Michael C; Jakubka, Florian; Gannott, Florentina; Sirringhaus, Henning; Zaumseil, Jana

    2012-01-24

    We investigate the influence of small amounts of semiconducting single-walled carbon nanotubes (SWNTs) dispersed in polyfluorenes such as poly(9,9-di-n-octylfluorene-alt-benzothiadiazole (F8BT) and poly(9,9-dioctylfluorene) (F8) on device characteristics of bottom contact/top gate ambipolar light-emitting field-effect transistors (LEFETs) based on these conjugated polymers. We find that the presence of SWNTs within the semiconducting layer at concentrations below the percolation limit significantly increases both hole and electron injection, even for a large band gap semiconductor like F8, without leading to significant luminescence quenching of the conjugated polymer. As a result of the reduced contact resistance and lower threshold voltages, larger ambipolar currents and thus brighter light emission are observed. We examine possible mechanisms of this effect such as energy level alignment, reduced bulk resistance above the contacts, and field-enhanced injection at the nanotube tips. The observed ambipolar injection improvement is applicable to most conjugated polymers in staggered transistor configurations or similar organic electronic devices where injection barriers are an issue. PMID:22142143

  8. Encapsulation of Semiconducting Polymers in Vault Protein Cages

    SciTech Connect

    Ng, B.C.; Yu, M.; Gopal, A.; Rome, L.H.; Monbouquette, H.G.; Tolbert, S.H.

    2009-05-22

    We demonstrate that a semiconducting polymer [poly(2-methoxy-5-propyloxy sulfonate phenylene vinylene), MPS-PPV] can be encapsulated inside recombinant, self-assembling protein nanocapsules called 'vaults'. Polymer incorporation into these nanosized protein cages, found naturally at {approx}10,000 copies per human cell, was confirmed by fluorescence spectroscopy and small-angle X-ray scattering. Although vault cellular functions and gating mechanisms remain unknown, their large internal volume and natural prevalence within the human body suggests they could be used as carriers for therapeutics and medical imaging reagents. This study provides the groundwork for the use of vaults in encapsulation and delivery applications.

  9. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  10. Annealing effects on the optical properties of semiconducting boron carbide

    SciTech Connect

    Billa, R. B.; Robertson, B. W.; Hofmann, T.; Schubert, M.

    2009-08-01

    Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at approx2560 cm{sup -1} in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 deg. C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.

  11. Ultraviolet optical absorptions of semiconducting copper phosphate glasses

    NASA Technical Reports Server (NTRS)

    Bae, Byeong-Soo; Weinberg, Michael C.

    1993-01-01

    Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

  12. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

    PubMed

    Kang, Kibum; Xie, Saien; Huang, Lujie; Han, Yimo; Huang, Pinshane Y; Mak, Kin Fai; Kim, Cheol-Joo; Muller, David; Park, Jiwoong

    2015-04-30

    The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three

  13. Electrical device fabrication from nanotube formations

    DOEpatents

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  14. Networks of semiconducting SWNTs: contribution of midgap electronic states to the electrical transport.

    PubMed

    Itkis, Mikhail E; Pekker, Aron; Tian, Xiaojuan; Bekyarova, Elena; Haddon, Robert C

    2015-08-18

    Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the

  15. Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus.

    PubMed

    Ryder, Christopher R; Wood, Joshua D; Wells, Spencer A; Hersam, Mark C

    2016-04-26

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications. PMID:27018800

  16. Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes

    NASA Astrophysics Data System (ADS)

    Akbas, Y.; Stern, A.; Zhang, L. Q.; Alimi, Y.; Song, A. M.; Iñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Wicks, G. W.; Sobolewski, Roman

    2015-10-01

    We present our research on the fabrication and optical characterization of novel semiconducting asymmetric nano-channel diodes (ANCDs). We focus on optical properties of ANCDs and demonstrate that they can be operated as very sensitive, single-photon-level, visible-light photodetectors. Our test devices consisted of 1.2-μm-long, ∼200- to 300-nm-wide channels that were etched in an InGaAs/InAlAs quantum-well hetero structure with a twodimensional electron gas layer. The ANCD I-V curves were collected by measuring the transport current both in the dark and under 800-nm-wavelength, continuous-wave-light laser illumination. In all of our devices, the impact of the light illumination was very clear, and there was a substantial photocurrent, even for incident optical power as low as 1 nW. The magnitude of the optical responsivity in ANCDs with the conducting nano-channel increased linearly with a decrease in optical power over many orders of magnitude, reaching a value of almost 10,000 A/W at 1-nW excitation.

  17. Q-switched waveguide laser based on two-dimensional semiconducting materials: tungsten disulfide and black phosphorous.

    PubMed

    Tan, Yang; Guo, Zhinan; Ma, Linan; Zhang, Han; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

    2016-02-01

    Owing to their unique properties, graphene-like two dimensional semiconducting materials, including Tungsten Disulfide (WS2) and Black Phosphorous (BP), have attracted increasing interest from basic research to practical applications. Herein, we demonstrated the ultrafast nonlinear saturable absorption response of WS2 and BP films in the waveguide structure. Through fabricating WS2 and BP films by evaporating the solutions on glass wafers. Saturable absorber films were attached onto the end-facet of the waveguide, which therefore constitutes a resonant cavity for the waveguide laser. Under a pump laser at 810 nm, we could obtain a stable Q-switched operation in the waveguide structure. This work indicated the significant potential of WS2 and BP for the ultrafast waveguide laser. PMID:26906854

  18. Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays.

    PubMed

    Li, Yingtao; Li, Rongrong; Fu, Liping; Gao, Xiaoping; Wang, Yang; Tao, Chunlan

    2015-10-23

    A crossbar array is usually used for the high-density application of a resistive random access memory (RRAM) device. However, the cross-talk interference limits the increase in the integration density. In this paper, anti-series connected Zener diodes as a selection device are proposed for bipolar RRAM arrays. Simulation results show that, by using the anti-series connected Zener diodes as a selection device, the readout margin is sufficiently improved compared to that obtained without a selection device or with anti-parallel connected diodes as the selection device. The maximum size of the crossbar arrays with anti-series connected Zener diodes as a selection device over 1 TB is estimated by theoretical simulation. In addition, the feasibility of using the anti-series connected Zener diodes as a selection device for bipolar RRAM is demonstrated experimentally. These results indicate that anti-series connected Zener diodes as a selection device opens up great opportunities to realize ultrahigh-density bipolar RRAM arrays. PMID:26422279

  19. Exploring the influence of carboxylic acids on nonlinear optical (NLO) and dielectric properties of KDP crystal for applications of NLO facilitated photonic devices

    NASA Astrophysics Data System (ADS)

    Anis, Mohd; Muley, G. G.; Hakeem, A.; Shirsat, M. D.; Hussaini, S. S.

    2015-08-01

    The aim of present investigation is to assess the impact of oxalic acid (OA) and maleic acid (MA) on nonlinearity (second and third order) and dielectric behavior of potassium dihydrogen phosphate (KDP) crystal by means of SHG efficiency test, Z-scan analysis and dielectric studies respectively. The enhancement in SHG efficiency of OA and MA doped KDP crystal has been confirmed by means of Kurtz-Perry powder test technique. The close and open aperture Z-scan technique has been employed to study the nature and origin of improved third order NLO behavior of doped KDP crystals at 632.8 nm. The magnitude of third order nonlinear susceptibility (χ3), nonlinear refraction (n2), nonlinear absorption coefficient (β) and figure of merit (FOM) of doped KDP crystals has been calculated using the Z-scan transmittance data to explore the suitability of crystals for distinct laser assisted applications. The dielectric constant and dielectric loss of pure, OA and MA doped KDP crystals were measured at different temperatures by means of dielectric studies.

  20. Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    DOEpatents

    Wang, Zhong L.; Xu, Sheng

    2011-08-23

    An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

  1. Charge-carrier injection via semiconducting electrodes into semiconducting/electroluminescent polymers

    NASA Astrophysics Data System (ADS)

    Wünsch, F.; Chazalviel, J.-N.; Ozanam, F.; Sigaud, P.; Stéphan, O.

    2001-08-01

    The indium-tin-oxide (ITO) electrode commonly used for hole injection in organic electroluminescent devices is replaced by a crystalline p-type Si electrode in order to improve the injection efficiency. Several conducting/electroluminescent polymers such as poly(9-vinylcarbazole), poly(9,9-dihexylfluorene) and polyhexylcarbazole are deposited via spin-coating onto the Si electrode, and an Al contact is evaporated on top. Current-voltage characteristics indicate that hole injection into these polymers is easier from p-Si than from ITO or Au. Surface effects hinder an even better performance, expected from naive energetics considerations. This major role of the surface is demonstrated by comparing the average photoconductivity decay time at the Si/polymer-interface with that at an Si surface, using spatially resolved microwave reflection. Also, various surface treatments such as hydrogenation, oxidation and methylation are applied to the Si substrate before polymer deposition. The results highlight the key role of the interface state density at the semiconductor/polymer interface, and the need for a surface state density as low as possible in order to minimise the operating voltage.

  2. Nonlinear Optics and Applications

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

    2007-01-01

    Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

  3. BaMn2Sb2: A New Semiconducting Ferromagnet

    NASA Astrophysics Data System (ADS)

    Li, Jianneng; Stadler, S.; Karki, A.; Xiong, Y.; Jin, R.

    2012-02-01

    We have grown high-quality single crystals of BaMn2Sb2, which possesses the ThCr2Si2 structure as determined by X-ray powder diffraction technique. Magnetization measurements indicate that BaMn2Fe2 is ferromagnetic below TC = 580K. On the other hand, the temperature dependence of electrical resistivity shows semiconducting behavior, which can be described by thermally-activated resistivity formula with thermal activation energy about 0.25 eV . While the Hall coefficient has positive sign between 2 and 300 K, the Seebeck Coefficient undergoes sign change from positive at high temperatures to negative at low temperatures, reaching -260 μV/K at 70 K. The implication will be discussed.

  4. Nanoscale semiconducting silicon as a nutritional food additive

    NASA Astrophysics Data System (ADS)

    Canham, L. T.

    2007-05-01

    Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

  5. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m‑1 K‑2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  6. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    DOE PAGESBeta

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui -Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; et al

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate thatmore » phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

  7. Amplified Spontaneous Emission Properties of Semiconducting Organic Materials

    PubMed Central

    Calzado, Eva M.; Boj, Pedro G.; Díaz-García, María A.

    2010-01-01

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature. PMID:20640167

  8. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE PAGESBeta

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn₁₋xZnxO alloys. At Zn compositions above x ≈ 0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  9. ``Once Nonlinear, Always Nonlinear''

    NASA Astrophysics Data System (ADS)

    Blackstock, David T.

    2006-05-01

    The phrase "Once nonlinear, always nonlinear" is attributed to David F. Pernet. In the 1970s he noticed that nonlinearly generated higher harmonic components (both tones and noise) don't decay as small signals, no matter how far the wave propagates. Despite being out of step with the then widespread notion that small-signal behavior is restored in "old age," Pernet's view is supported by the Burgers-equation solutions of the early 1960s. For a plane wave from a sinusoidally vibrating source in a thermoviscous fluid, the old-age decay of the nth harmonic is e-nαx, not e-n2αx (small-signal expectation), where α is the absorption coefficient at the fundamental frequency f and x is propagation distance. Moreover, for spherical waves (r the distance) the harmonic diminishes as e-nαx/rn, not e-n2αx/r. While not new, these results have special application to aircraft noise propagation, since the large propagation distances of interest imply old age. The virtual source model may be used to explain the "anomalous" decay rates. In old age most of the nth harmonic sound comes from virtual sources close to the receiver. Their strength is proportional to the nth power of the local fundamental amplitude, and that sets the decay law for the nth harmonic.

  10. Emissivity and electrooptical properties of semiconducting quantum dots/rods and liquid crystal composites: a review

    NASA Astrophysics Data System (ADS)

    Singh, Gautam; Fisch, Michael; Kumar, Satyendra

    2016-05-01

    Investigations of the mixtures of semiconducting quantum scale particles in anisotropic liquid crystal (LC) medium have become a vibrant area of research primarily due to their very interesting phenomenology. The results of these investigations fall into four groups: (i) Photoluminescent emissive properties of the quantum particles ordinarily depend on the size, shape, and chemical nature of the particles. These undergo important changes in their spectrum, polarization, and isotropy of emission when dissolved in an anisotropic LC phase. Moreover, their response to external stimuli such as mechanical, optical, or electric fields is altered in important ways; (ii) physical properties of LCs such as viscosity, dielectric relaxation, etc are modified by the addition of quantum particles. Their presence in ferroelectric smectic LC is known to give rise to an antiferro- to ferri-electric phase transition and suppresses the paraelectric phase; (iii) switching characteristics of LC devices are altered in important ways by the addition of quantum particles. Their threshold voltage is usually lowered, contrast ratio, and switching speed of nematic, ferroelectric, and cholesteric devices may increase or decrease depending on the concentration, applied field, and particle anisotropy; and (iv) controlled aggregation of quantum particles at the interface between isotropic and LC domains, near added polystyrene beads, and in the vicinity of point defects gives rise to interesting photonic structures, enables studies of photon antibunching and single photon sources. Clearly, there is a need to understand the basic and applied aspects of these systems and find routes to their technological applications including sensors, electrooptical devices, and solar energy harvesting. This review provides an overview of recent work involving liquid crystals and a variety of quantum particles.