Science.gov

Sample records for nonmagnetic iii-v semiconductor

  1. III-V arsenide-nitride semiconductor

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  2. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  3. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  4. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    PubMed

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-01

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform. PMID:26561728

  5. Diluted magnetic III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Munekata, H.; Ohno, H.; von Molnar, S.; Segmüller, Armin; Chang, L. L.; Esaki, L.

    1989-10-01

    A new diluted magnetic III-V semiconductor of In1-xMnxAs (x<=0.18) has been produced by molecular-beam epitaxy. Films grown at 300 °C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 °C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.

  6. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    NASA Astrophysics Data System (ADS)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  7. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  8. Antisites in III-V semiconductors: Density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Tahini, H. A.; Schwingenschlögl, U.; Grimes, R. W.

    2014-07-01

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites ( III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites ( V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  9. III-V aresenide-nitride semiconductor materials and devices

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  10. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  11. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  12. Surface Sum Frequency Generation of III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Kim, Jisun; Khoury, Rami; Plummer, E. W.; Haber, Louis

    2015-03-01

    Optical sum frequency generation (SFG) is a well-established technique for surface and interface studies but its use has been limited mainly to centrosymmetric materials so far. Here, we demonstrate that femtosecond broadband SFG spectroscopy has the ability to identify surface molecular vibrations on the archetypical non-centrosymmetric semiconductor GaAs (001), in which the bulk SFG signal typically dominates over surface SFG contributions. Azimuthal angle dependence of the second order SFG nonlinear response from GaAs (001) surface in the reflection geometry in vacuum for all eight polarization combinations are detected and analyzed. The results agree with and extend upon previous second harmonic generation (SHG) studies and phenomenological analysis. In addition, carbon monoxide and methanol are employed as molecular-markers on the GaAs (001) surfaces. The C-O stretching mode of carbon monoxide and the methyl group stretching modes of methanol are clearly observed even though the bulk contribution dominates the SFG signal. Coherent heterodyne interference is proposed as the mechanism for the surface signal enhancement. Two other zinc blende type III-V semiconductors, GaP and GaSb, are also studied and compared. Funded by EFRC.

  13. Thermal conductivity of III-V semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Mei, S.; Knezevic, I.

    2015-11-01

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  14. Thermal conductivity of III-V semiconductor superlattices

    SciTech Connect

    Mei, S. Knezevic, I.

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  15. Antisites in III-V semiconductors: Density functional theory calculations

    SciTech Connect

    Chroneos, A.; Tahini, H. A.; Schwingenschlögl, U.; Grimes, R. W.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  16. Mixing of III-V compound semiconductor superlattices

    SciTech Connect

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of {approximately}3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn{sub 3}P{sub 2}. With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication.

  17. Ion mixing of III-V compound semiconductor layered structures

    SciTech Connect

    Xia, W.; Pappert, S.A.; Zhu, B.; Clawson, A.R.; Yu, P.K.L.; Lau, S.S. ); Poker, D.B.; White, C.W. ); Schwarz, S.A. )

    1992-03-15

    Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions ({similar to}10{sup 15}/cm{sup 2}) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.

  18. Spin transport in strained non-magnetic zinc blende semiconductors

    NASA Astrophysics Data System (ADS)

    Moehlmann, Benjamin James

    The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We begin with a review of the literature on spin dynamics in semiconductors, then discuss the semi-empirical k·p method of calculating direct-gap semiconductor properties, which we use to estimate material parameters significant for manipulation of spin even in the absence of a magnetic field. The total effective magnetic fields and precession lengths are calculated for a variety of quantum well orientations, and a class of devices are proposed that will allow for all-electric arbitrary manipulation of spin orientations. The strain- and momentum-dependent spin splitting coefficient C3 has been calculated using a fourteen band Kane k·p model for a variety of III-V semiconductors as well as ZnSe and CdSe. It is observed that the spin-splitting parameters C 3 and gamma, corresponding to the strain-induced spin-orbit interaction and Dresselhaus coefficient, are sensitive to the value of the inter-band spin-orbit coupling Delta- between the p valence and p second conduction band in all cases. The value of Delta- has therefore been recalculated in these materials using a tight-binding model and modern experimental values of the valence and second conduction band spin-orbit splittings. The total effective magnetic field and precession length of spins in strained quantum wells in the (001), (110), and (111) planes are derived with consideration for all known effective magnetic fields except those due to interface effects in non- common-atom heterostructures (native inversion asymmetry). The orientation of the k-linear Dresselhaus field and the strain-dependent fields vary strongly with the growth axis of the quantum well. The precession length in the (110) and (001) cases can achieve infinite anisotropy, while the precession length of (111) quantum wells is always isotropic. We find that the electronic spin rotation

  19. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  20. Vibrational, mechanical, and thermal properties of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1989-02-01

    Theories of the mechanical, vibrational, and electronic properties of 3 to 5 semiconductors were developed and applied to: (1) help determine the feasibility of InN-based visible and ultraviolet lasers and light detectors, (2) develop a theory of phonons in semiconductor alloys, (3) understand surface reconstruction of semiconductors, (4) predict the effects of atomic correlations on the light-scattering (Raman) properties of semiconductive alloys, (5) develop a new first principles pseudo-function implementation of local-density theory, (6) study the oxidation of GaAs, (7) develop a theory of scanning tunneling microscope images, and (8) understand the electronic and optical properties of highly strained artificial semiconductors and small semiconductor particles.

  1. Characteristics of III-V Semiconductor Devices at High Temperature

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

    1994-01-01

    This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

  2. Predicted band structures of III-V semiconductors in the wurtzite phase

    SciTech Connect

    De, A.; Pryor, Craig E.

    2010-04-15

    While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

  3. Electronic structure of III-V zinc-blende semiconductors from first principles

    NASA Astrophysics Data System (ADS)

    Wang, Yin; Yin, Haitao; Cao, Ronggen; Zahid, Ferdows; Zhu, Yu; Liu, Lei; Wang, Jian; Guo, Hong

    2013-06-01

    For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor compounds. Our calculations are from density functional theory with the semilocal exchange proposed recently [Tran and Blaha, Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.102.226401 102, 226401 (2009)], within the linear muffin tin orbital scheme. The calculated band gaps and effective masses are compared to experimental data and good quantitative agreement is obtained. Using the theoretical scheme presented here, quantum transport in nanostructures of III-V compounds can be confidently predicted.

  4. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    SciTech Connect

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  5. Dislocation effects in FinFETs for different III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-04-01

    While Si-based devices are facing the limits of scaling, III-V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III-V compound semiconductors.

  6. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    SciTech Connect

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  7. A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.

    PubMed

    Wang, Junli; Yang, Qing

    2008-11-21

    Group III-V (13-15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh(3)) and triphenylarsine (AsPh(3)) in sealed vacuum quartz tubes under moderate conditions at 320-400 degrees C for 8-24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III-V semiconductor materials, and the air-stable PPh(3) and AsPh(3) with low toxicity provide good alternative pnicogen precursors for the synthesis of III-V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh(3) and AsPh(3), and that the tendency for the synthesis of III-V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III-V nanocrystals were investigated. PMID:19082064

  8. Valence band orbital polarization in III-V ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Freeman, A. A.; Edmonds, K. W.; van der Laan, G.; Campion, R. P.; Rushforth, A. W.; Farley, N. R. S.; Johal, T. K.; Foxon, C. T.; Gallagher, B. L.; Rogalev, A.; Wilhelm, F.

    2008-02-01

    The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the AsK absorption edge, yielding an As4p orbital magnetic moment of around -0.1μB per valence band hole, which is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the GaK edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn4p states to the MnK edge spectra.

  9. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si.

    PubMed

    Svensson, Johannes; Dey, Anil W; Jacobsson, Daniel; Wernersson, Lars-Erik

    2015-12-01

    III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal-oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I(on)/I(off) ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we demonstrate fundamental CMOS logic gates, such as inverters and NAND gates, which illustrate the viability of our approach for large scale III-V MOSFET circuits on Si. PMID:26595174

  10. Methods for forming group III-V arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  11. Direct growth of single-crystalline III-V semiconductors on amorphous substrates

    NASA Astrophysics Data System (ADS)

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager, Joel W., III; Chrzan, Daryl C.; Javey, Ali

    2016-01-01

    The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

  12. Direct growth of single-crystalline III-V semiconductors on amorphous substrates.

    PubMed

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager Iii, Joel W; Chrzan, Daryl C; Javey, Ali

    2016-01-01

    The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth. PMID:26813257

  13. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    NASA Astrophysics Data System (ADS)

    Li, Kan; Xing, Yingjie; Xu, H. Q.

    2016-06-01

    Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  14. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  15. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Ohya, Shinobu; Nam Hai, Pham

    2014-03-01

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  16. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  17. Conductivity (ac and dc) in III-V amorphous semiconductors and chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Hauser, J. J.

    1985-02-01

    Variable-range hopping, as evidenced by a resistivity proportional to exp(T-1/4), has been induced in many III-V amorphous semiconductors (InSb, AlSb, and GaAs) and even in chalcogenide glasses (As2Te3, As2Te3-xSex, and GeTe) by depositing films at 77 K. It is therefore remarkable that the same procedure failed to generate variable-range hopping in GaSb, which is one of the less ionic III-V semiconductors. Besides differences in the dc conductivity, there are also different behaviors in the ac conductivity of amorphous semiconductors. The low-temperature ac conductivity of all amorphous semiconductors is proportional to ωsTn with s~=1 and n<1, which is consistent with a model of correlated barrier hopping of electron pairs between paired and random defects. However, in the case of a-SiO2 and a-GeSe2 one finds, in addition, that the capacitance obeys the scaling relation C=A ln(Tω-1), which would suggest a conduction mechanism by tunneling relaxation. Furthermore, this scaling relation cannot be fitted to the data for a-As2Te3, a-InSb, and a-GaSb although the functional dependence of C on T and ω are similar.

  18. Electronic structure and v alence of Mn imputiries in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, T. C.; Temmerman, W.; Szotek, Z.; Stocks, G. M.; Butler, W. H.

    2004-03-01

    Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors doe change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work supported by the Defense Advanced Research Project Agency and by the Division of Materials Science and Engineering, U.S. Department of Energy, under Contract DE-AC05-00OR22725 with UT-Battelle LLC.

  19. Electronic Structure and Valence of Mn impurities in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, Thomas C.

    2003-11-01

    Mn doped III-V semiconductors have recently become very popular materials since they are ferromagnetic at reasonably high temperatures and in some cases show carrier induced magnetism, where the Curie temperature can be altered by changes in the carrier concentration. It is expected that these materials will play an important role in Spintronics devices. Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors does change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work done in collaboration with W. Temmerman and S. Szotek, Daresbury Laboratory, G. M. Stocks, ORNL, and W. H. Butler, MINT Center University of Alabama. This work supported by the Defense Advanced Research Agency and by DOE Office of Science trough ASCR/MICS and BES/DMSE under Contract No

  20. Microscopic study of the hydrogen diffusion in III-V semiconductors

    SciTech Connect

    Burchard, A.; Deicher, M.; Knopf, M.; Stoetzler, A.; Forkel-Wirth, D.; Fedoseyev, V.N.; Mishin, V.I.

    1998-12-31

    The authors report on experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, GaAs, and InAs. Using the radioactive acceptor {sup 117}Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of {sup 117}Cd to {sup 117}In, H is no longer bound to an acceptor and can diffuse freely. This diffusion has been observed by perturbed {gamma}{gamma} angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed. First results on the diffusion of hydrogen will be discussed.

  1. Ion implantation processing of III-V strained-layer semiconductors

    SciTech Connect

    Myers, D.R.

    1987-01-01

    Ion implantation has had a strong impact on the development of III-V strained-layer semiconductor (SLS) materials and device technologies. Implantation studies have helped delineate the present understanding of strained-layer stability and metastability limits. Resulting ion beam technologies have led to improvements in a variety of SLS discrete devices, including optoelectronic emitters, photodetectors, and field-effect transistors. Both SLS stability criteria and implanted SLS devices are reviewed with respect to future applications in optoelectronics. 36 refs., 2 figs.

  2. Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors

    SciTech Connect

    Wendler, E.; Wendler, L.

    2012-05-07

    In this letter, the cross section of damage formation per individual ion is measured for III-V compound semiconductors ion implanted at 15 K, applying Rutherford backscattering spectrometry. An empirical model is proposed that explains the measured cross sections in terms of quantities representing the primary energies deposited in the displacement of lattice atoms and in electronic interactions. The resulting formula allows the prediction of damage formation for low temperatures and low ion fluences in these materials and can be taken as a starting point for further quantitative modeling of damage formation including secondary effects such as temperature and ion flux.

  3. Simulations of Liquid III-V and II-VI Semiconductors: Semiconducting versus Metallic Behavior.

    NASA Astrophysics Data System (ADS)

    Godlevsky, V.

    2000-03-01

    All III-V group semiconductors exhibit metallic behavior when melted. The coordination number of these materials changes from 4 in the bulk to ~ 6 in the liquid phase. With the increase of the coordination number and compositional disorder common to liquid III-V semiconductors, the covalent bonds of these materials are predominantly replaced by metallic bonds. Electron delocalization and high atomic randomization result in a large entropy change during the solidarrowliquid transition. Unlike III-V compounds, a number of II-VI semiconductors (e.g. CdTe, ZnTe and HgS) experience a semiconductorarrowsemiconductor transition upon melting. These compounds retain their fourfold coordination in the liquid phase. In our work, we perform ab initio simulations of liquid GaAs (l-GaAs) and CdTe (l-CdTe), as representatives of III-V and II-VI materials.(V. Godlevsky, J. Derby, and J.R. Chelikowsky, Phys. Rev. Lett. 81), 4959 (1998) As opposed to the more close-packed l-GaAs, l-CdTe has an open fourfold structure. Besides the coordination number, l-CdTe also retains some of its crystalline compositional features (e.g. there are fewer ``wrong'' bond defects than in l-GaAs). In l-CdTe, the density of states has a dip at the Fermi level indicating the semiconducting character of electrical conductivity in this material. The d.c. conductivity in l-CdTe is by two orders of magnitude lower than that in l-GaAs. The small change in the structural order and electron delocalization is in good agreement with the small entropy change observed experimentally during the melting of CdTe. As the temperature increases further, l-CdTe undergoes a fourfold-sixfold transition accompanied by the disappearing of band gap. The d.c. conductivity of sixfold coordinated l-CdTe is by an order of magnitude larger than the d.c. conductivity of fourfold coordinated l-CdTe.(V. Godlevsky, M. Jain, J. Derby, and J.R. Chelikowsky, Phys. Rev. B, 60), 8640 (1999)

  4. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  5. Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

    NASA Astrophysics Data System (ADS)

    Punkkinen, M. P. J.; Laukkanen, P.; Lång, J.; Kuzmin, M.; Tuominen, M.; Tuominen, V.; Dahl, J.; Pessa, M.; Guina, M.; Kokko, K.; Sadowski, J.; Johansson, B.; Väyrynen, I. J.; Vitos, L.

    2011-05-01

    Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8×2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e.g., the origins of the photoemission shifts and electronic structures, using surface science methods.

  6. III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

    NASA Astrophysics Data System (ADS)

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-02-01

    As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.

  7. Laser induced chemical vapor phase epitaxial growth of III-V semiconductor films

    NASA Astrophysics Data System (ADS)

    Chu, Shirley S.; Chu, Ting L.

    1991-05-01

    The objective of this project is to investigate the homo- and hetero-epitaxial growth of device quality III-V semiconductor films by the free electron laser (FEL) induced growth at lower temperatures. An ArF excimer laser was used in this investigation. Metalorganic vapor phase epitaxy (MOVPE) is the commonly used technique in the growth of III-V compounds and alloys. The major concern to the use of MOVPE is the hazard involved in using highly toxic arsine and phosphine gases as the group V source materials. Efforts during this period have been focused to the homoepitaxial growth of GaAs and heteroepitaxial growth of InP on GaAs using alternate sources to eliminate the use of arsine and phosphine. Good quality epitaxial GaAs films have been prepared from elemental arsenic for the first time by either conventional substrate heating or laser enhanced processes. The epitaxial GaAs films grown from elemental arsenic are suitable for many GaAs based devices, particularly for large area devices such as solar cells. Significant cost reduction and less stringent safety requirements are major advantages.

  8. Ultraviolet photosulfidation of III-V compound semiconductors for electronic passivation

    SciTech Connect

    Zavadil, K.R.; Ashby, C.I.H.; Howard, A.J.; Hammons, B.E.

    1993-10-01

    A new vacuum-compatible passivation technique for III-V compound semiconductors has been developed. Sulfur passivation of GaAs(100) is produced by ultraviolet photolytic deposition of a sulfide species from vapor phase elemental sulfur. Photoluminescence studies of the photosulfided GaAs reveal a degree of passivation greater than or equal to that produced by conventional (NH{sub 4}{sub 2}S) solution treatment. X-ray Photoelectron Spectroscopy has shown that the sulfur resides on the surface as a single reduced sulfur species, either as sulfide of disulfide, indicating complete fragmentation of the S{sub 8} ring by UV light in proximity to the surface. The degree of photosulfidation depends strongly on surface preparation as demonstrated by the described surface oxide removal studies.

  9. Nucleation and growth of dielectric films on III-V semiconductors during atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Granados Alpizar, Bernal

    In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the power density, the channel should be replaced with a material having a higher electron mobility, such as a III-V semiconductor. However, the integration of III-V's is a challenge because these materials oxidize rapidly when exposed to air and the native oxide produced is characterized by a high density of defects. Deposition of high-k materials on III-V semiconductors using Atomic Layer Deposition (ALD) reduces the thickness of these oxides, improving the semiconductor/oxide interface quality and the transistor electrical characteristics. In this work, ALD is used to deposit two dielectrics, Al 2O3 and TiO2, on two III-V materials, GaAs and InGaAs, and in-situ X-ray photoelectron spectroscopy (XPS) and in-situ thermal programmed desorption (TPD) are used for interface characterization. Hydrofluoric acid (HF) etching of GaAs(100) and brief reoxidation in air produces a 9.0 ±1.6 Å-thick oxide overlayer containing 86% As oxides. The oxides are removed by 1 s pulses of trimethylaluminum (TMA) or TiCl4. TMA removes the oxide overlayer while depositing a 7.5 ± 1.6 Å thick aluminum oxide. The reaction follows a ligand exchange mechanism producing nonvolatile Al-O species that remain on the surface. TiCl4 exposure removes the oxide overlayer in the temperature range 89°C to 300°C, depositing approximately 0.04 monolayer of titanium oxide for deposition temperatures from 89°C to 135°C, but no titanium oxide is present from 170 °C to 230 °C. TiCl4 forms a volatile oxychloride product and removes O from the surface while leaving Cl atoms adsorbed to an elemental As layer, chemically passivating the surface. The native oxide of In0.53Ga0.47As(100) is removed using liquid HF and gas phase HF before deposition of Al2O3 using TMA and H2O at 170 °C. An aluminium oxide film with a thickness of 7.2 ± 1.2 Å and 7.3 ± 1.2 Å is deposited during the first pulse of TMA on

  10. III-V semiconductors on silicon-germanium substrates for multi-junction photovoltaics

    NASA Astrophysics Data System (ADS)

    Andre, Carrie L.

    The epitaxial integration of high quality III-V semiconductors with Si is of fundamental interest for photovoltaic devices since Si substrates offer a lighter, stronger, and cost effective platform for device production. However, the lattice-mismatch between conventional III-V photovoltaic materials and Si generates threading dislocations in the epitaxial device layers, which can limit solar cell performance, depending of the density of such defects, the particular III-V material, and the device design. By using compositionally step-graded SiGe interlayers up to 100% Ge, which is lattice-matched to GaAs, the ˜4% lattice-mismatch between Si and GaAs and In0.49 Ga0.51P is accommodated in the Group IV alloy system; this has produced defect densities less than 1 x 106 cm -2 in fully relaxed the Ge/SiGe/Si (SiGe) virtual substrates. This unique approach to III-V/Si integration is employed in this dissertation for the development of GaAs and In0.49Ga0.51P single junction (SJ) solar cells and ultimately In0.49Ga0.51P/GaAs dual junction (DJ) solar cells, integrated on a Si platform. The residual threading dislocation density (TDD) present in the SiGe substrates transfers to the epitaxially grown III-V layers and thus can influence III-V solar cell performance. In this dissertation we report, for the first time, on the impact of TDD on the minority carrier electron lifetime in GaAs grown on SiGe. The electron lifetime in metamorphic p-type GaAs was found to be lower than that of holes in n-type GaAs at a given TDD. This resulted from the higher mobility of electrons compared to holes and thus enhanced interactions with the TD array. Incorporating a TDD dependent lifetime into metamorphic GaAs solar cell device models, higher reverse saturation current densities and lower open-circuit voltages for n+/p compared to p+/n were predicted. This result was experimentally confirmed in this dissertation by diode and solar cell device measurements of both n +/p and p+/n GaAs cells

  11. Few-body properties of interacting spins in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Woodworth, Ryan

    We perform theoretical analyses of several novel device applications which make use of the distinctive electronic and optical properties of III-V semiconductors. Electron spins in semiconductor quantum dots are a promising candidate for the physical realization of a solid-state quantum computer. Whenever three or more spins interact simultaneously, the system's full Hamiltonian is found to include nonlinear interactions that significantly influence its dynamics in experimentally relevant parameter regimes. We consider the implications of these results for the proposed implementations of known quantum algorithms; in particular, we describe a method for circumventing the four-body effects in an encoded system (four spins per logical bit) by the appropriate tuning of material parameters. We calculate the spin coherence lifetime of a conduction electron in a semiconductor due to exchange scattering from neutral donors. The average lifetime is computed in two and in three dimensions using the Born approximation. We find that, for realistic values of the impurity concentrations, these lifetimes are comparable to those of spin decoherence mechanisms commonly ascribed to experimentally observed lifetimes. We also develop a numerical model for charge diffusion in a GaAs heterostructure laser. We construct and solve rate equations for conduction electrons coupled to a single optical cavity mode in a microdisk. Our results extend previous theoretical approaches to diffusion and are consistent with applicable experiments.

  12. Bismuth-induced surface structure and morphology in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.

    2015-04-01

    Bi is the largest group V element and has a number of advantages in III-V semiconductor properties, such as bandgap reduction, spin-orbit coupling, a preserved electron mobility over III-V-N materials, and nearly ideal surfactant properties resulting in a surface smoothing effect on GaAs. However, the mechanism for this behavior is not well understood. Insight on the mechanism is obtained through study of the Bi-terminated GaAs surface morphology and atomic reconstructions produced via molecular beam epitaxy (MBE). Experimental scanning tunneling microscopy (STM) characterization of the Bi/GaAs surface reveal disordered (1x3), (2x3), and (4x3) reconstructions, often sharing the same reflective high-energy electron diffraction (RHEED) patterns. Roughness on the micron length scale decreases as the step widen, attributed to the concurrent increase of opposite direction step edges on the nanometer length scale. Corresponding cluster expansion, density functional theory (DFT), and Monte Carlo simulations all point to the stability of the disordered (4x3) reconstruction at finite temperature as observed in experimental STM. The effects of incorporated Bi are determined through epitaxial GaSbBi growth on GaSb with various Ga:Sb:Bi flux ratios. Biphasic surface droplets are observed with sub-droplets, facets, and substrate etching. Despite the rough growth front, X-ray diffraction (XRD) and Rutherford backscatter (RBS) measurements show significant Bi incorporation of up to 12% into GaSb, along with a concurrent increase of background As concentration. This is attributed to a strain auto-compensation effect. Bi incorporation of up to 10% is observed for the highest Bi fluxes while maintaining low surface droplet density.

  13. Radiation effects in III-V semiconductors and heterojunction bipolar transistors

    NASA Astrophysics Data System (ADS)

    Shatalov, Alexei

    The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/ InGaAs HBTs are developed and subsequently employed to produce the devices, which are then electrically characterized and irradiated with the different types of radiation. A comprehensive analytical HBT model is developed and radiation damage calculations are performed to model the observed radiation-induced degradation of SHBTs. The most pronounced radiation effects found in SHBTs include reduction of the common-emitter DC current gain, shift of the collector-emitter (CE) offset voltage and increase of the emitter, base and collector parasitic resistances. Quantitative analysis performed using the developed model demonstrates that increase of the neutral bulk and base-emitter (BE) space charge region (SCR) components of the base current are responsible for the observed current gain degradation. The rise of the neutral bulk recombination is attributed to decrease in a Shockley-Read-Hall (SRH) carrier lifetime, while the SCR current increase is caused by rising SCR SRH recombination and activation of a tunneling-recombination mechanism. On the material level these effects are explained by displacement defects produced in a semiconductor by the incident radiation. The second primary change of the SHBT characteristics, CE offset voltage shift, is induced by degradation of the base- collector (BC) junction. The observed rise of the BC current is brought on by diffusion and recombination currents which increase as more defects are introduced in a semiconductor. Finally, the resistance degradation is attributed to deterioration of low-doped layers of a transistor, and to degradation of the device metal contacts.

  14. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    NASA Astrophysics Data System (ADS)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  15. A first-principles investigation of III-V semiconductor-water interfaces for solar hydrogen production

    NASA Astrophysics Data System (ADS)

    Wood, Brandon; Ogitsu, Tadashi; Schwegler, Eric

    2011-03-01

    Photoelectrochemical devices promise sustainable hydrogen production using sunlight and water. Currently, the highest efficiency devices use III-V semiconductor photoelectrodes; however, stability of these materials under operating conditions remains an issue. In an effort to understand the chemical properties of the electrode-water interface, we have performed first-principles molecular dynamics simulations on model III-V surfaces in realistic aqueous environments. The structure, stability, and chemical activity of these surfaces are investigated, with the aim of understanding the reactive states precursory to photoexcitation and hydrogen evolution. Our results show that surface oxide nucleation is key to facilitating surface reactivity, and that the surface oxygen bonding arrangement is important for determining of the available pathways for water dissociation and corrosion. This points to the importance of III-V surface oxides as intermediates in the water-dissociation component of hydrogen evolution. Prepared by LLNL under Contract DE-AC52-07NA27344.

  16. The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

    NASA Astrophysics Data System (ADS)

    Greene, Andrew M.

    Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1

  17. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

    NASA Astrophysics Data System (ADS)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori; Freeman, Arthur J.

    2014-03-01

    The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal AlxGa1-xP and AlxGa1-xAs alloys, respectively, leads to a direct transition with a gap energy of ˜2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

  18. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

    SciTech Connect

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori; Freeman, Arthur J.

    2014-03-31

    The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal Al{sub x}Ga{sub 1−x}P and Al{sub x}Ga{sub 1−x}As alloys, respectively, leads to a direct transition with a gap energy of ∼2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

  19. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    PubMed

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries. PMID:26549624

  20. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  1. A model describing the pressure dependence of the band gap energy for the group III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Wei, Tong; Sun, Xiao-Dong; Wang, Sha-Sha; Lu, Ke-Qing

    2016-08-01

    A model describing the pressure dependence of the band gap energy for the group III-V semiconductors has been developed. It is found that the model describes the pressure dependence of the band gap energy very well. It is also found that, although the pressure dependence of the band gap energy for both the conventional III-V semiconductors and the dilute nitride alloys can be described well by the model in this work, the physical mechanisms for them are different. In addition, the influence of the nonlinear compression of the lattice on the band gap energy is smaller than that of the coupling interaction between the N level and the conduction band minimum of the host material.

  2. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  3. Nano-photonics in III-V semiconductors for integrated quantum optical circuits

    NASA Astrophysics Data System (ADS)

    Wasley, Nicholas Andrew

    This thesis describes the optical spectroscopic measurements of III-V semiconductors used to investigate a number of issues related to the development of integrated quantum optical circuits. The disorder-limited propagation of photons in photonic crystal waveguides in the slow-light regime is investigated. The analysis of Fabry-Perot resonances is used to map the mode dispersion and extract the photon localisation length. Andersonlocalised modes are observed at high group indices, when the localisation lengths are shorter than the waveguide lengths, consistent with the Fabry-Perot analysis. A spin-photon interface based on two orthogonal waveguides is introduced, where the polarisation emitted by a quantum dot is mapped to a path-encoded photon. Operation is demonstrated by deducing the spin using the interference of in-plane photons. A second device directly maps right and left circular polarisations to anti-parallel waveguides, surprising for a non-chiral structure but consistent with an off-centre dot. Two dimensional photonic crystal cavities in GaInP and full control over the spontaneous emission rate of InP quantum dots is demonstrated by spectrally tuning the exciton emission energy into resonance with the fundamental cavity mode. Fourier transform spectroscopy is used to investigate the short coherence times of InP quantum dots in GaInP photonic crystal cavities. Additional technological developments are also presented including a quantum dot registration technique, electrical tuning of quantum dot emission and uniaxial strain tuning of H1 cavity modes.

  4. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  5. Investigation of new devices and characterization techniques in the III-V semiconductor system

    NASA Astrophysics Data System (ADS)

    Cheng, Xiao-Chang

    This thesis concerns the investigation of novel devices and material characterization techniques in the III-V semiconductor system. In the first part of the thesis, we demonstrate that novel devices, such as avalanche photodiodes and tunnel switch diodes, can be fabricated from InAs/GaSb/AlSb heterostructures by molecular beam epitaxy (MBE). In the second part of the thesis, ballistic electron emission microscopy (BEEM) is employed to examine the local band offset in these heterostructures, which is often found to be crucial in device design. In the avalanche photodiode study, devices with near infrared response out to 1.74 mum were demonstrated. Two types of devices were investigated: those with a bulk Al0.04Ga0.96Sb multiplication region and those with a GaSb/AlSb superlattice multiplication region. Both types of devices were implemented in a MBE grown p-n + structure that uses a selectively doped InAs/AlSb superlattice as the n-type layer. This particular structure was optimized through several design, fabrication, characterization cycles. It was found that the photodiode dark current depended critically on the InAs/AlSb superlattice period and the resulting band offset at the p-n+ heterojunction. The InAs/AlSb superlattice was henceforth optimized by using a three stage design. The ionization rates in bulk multiplication layer devices were measured and found to be consistent with hole impact ionization enhancement in Al0.04Ga0.96Sb. However, direct comparison with superlattice multiplication layer devices revealed the latter to be more promising due to more effective dark current suppression from the larger band gap of the superlattice multiplication layer. The second device studied is the tunnel switch diode. We have fabricated the first such device in the antimonide material system and obtained characteristic "S" shaped I-V curves from these devices. The epilayer and barrier dependence of tunnel diode switching were studied and found to deviate significantly

  6. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    SciTech Connect

    Fowler, Bruce A. . E-mail: bxf9@cdc.gov; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-08-07

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  7. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  8. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  9. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  10. Spin-dependent shot noise in diluted magnetic semiconductor/semiconductor heterostructures with a nonmagnetic barrier

    NASA Astrophysics Data System (ADS)

    Wu, Shuang; Guo, Yong

    2014-05-01

    We investigate quantum size effect on the spin-dependent shot noise in the diluted magnetic semiconductor (DMS)/semiconductor heterostructure with a nonmagnetic semiconductor (NMS) barrier in the presence of external magnetic and electric fields. The results demonstrate that the NMS barrier plays a quite different role from the DMS layer in the electron transport process. It is found that spin-down shot noise shows relatively regular oscillations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically. However, as the width of NMS layer increases, the spin-down shot noise displays irregular oscillations at first and then decreases while the spin-up shot noise decreases at a quite different rate. The results indicate that the shot noise can be used as a sensitive probe in detecting material type and its size.

  11. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-05-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  12. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  13. Surface passivation of III-V semiconductors for future CMOS devices—Past research, present status and key issues for future

    NASA Astrophysics Data System (ADS)

    Hasegawa, H.; Akazawa, M.; Domanowska, A.; Adamowicz, B.

    2010-07-01

    Currently, III-V metal-insulator-semiconductor field effect transistors (MISFETs) are considered to be promising device candidates for the so-called "More Moore Approach" to continue scaling CMOS transistors on the silicon platform. Strong interest also exists in III-V nanowire MISFETs as a possible candidate for a "Beyond CMOS"-type device. III-V sensors using insulator-semiconductor interfaces are good candidates for "More Moore"-type of devices on the Si platform. The success of these new approaches for future electronics depends on the availability of a surface passivation technology which can realize pinning-free, high-quality interfaces between insulator and III-V semiconductors. This paper reviews the past history, present status and key issues of the research on the surface passivation technology for III-V semiconductors. First, a brief survey of previous research on surface passivation and MISFETs is made, and Fermi level pinning at insulator-semiconductor interface is discussed. Then, a brief review is made on recent approaches of interface control for high-k III-V MIS structures. Subsequently, as an actual example of interface control, latest results on the authors' surface passivation approach using a silicon interface control layer (Si ICL) are discussed. Finally, a photoluminescence (PL) method to characterize the interface quality is presented as an efficient contactless and non-destructive method which can be applied at each step of interface formation process without fabrication of MIS capacitors and MISFETs.

  14. Growth and in vivo STM of III-V Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Bastiman, F.; Cullis, A. G.; Hopkinson, M.; Green, M.

    A combinational machine (MBSTM) capable of III-V molecular beam epitaxial deposition whilst performing scanning tunnelling microscopy (STM) is described. Epitaxial deposition `under the STM tip' heralds a new world of discovery in the field of III-V epitaxial growth. What is fashionably referred to as in vivo STM offers the potential to observe a medley of speculated transitions that until now have been glimpsed frozen in time. It is potentially possible to observe in real time and on the atomic scale GaAs surface processes such as reconstruction transformations, monolayer steps sweeping across the growth surface and, for eg (001) orientation, the structure evolution during heteroepitaxial InAs deposition through Stranski-Krastanow (S-K) wetting layer formation and quantum dot (QD) growth. To this end, an overview of the machine is given, detailing the crucial composition of the MBSTM chamber. Key aspects related to tip preparation, temperature regulation and deposition inception are detailed providing a picture of the future of III-V epitaxial research.

  15. Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Mourad, D.; Czycholl, G.

    2012-05-01

    For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A x B1- x C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A x B1- x C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight-binding models for the pure AC and BC systems. The electronic properties of the A x B1- x C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1 - x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA) We apply this treatment to the II-VI system Cd x Zn1- x Se, to the III-V system In x Ga1- x As and to the III-nitride system Ga x Al1- x N.

  16. First-principles study of the surface energy and work function of III-V semiconductor compounds

    NASA Astrophysics Data System (ADS)

    Liu, W.; Zheng, W. T.; Jiang, Q.

    2007-06-01

    Surface energy and work function of 12 III-V semiconductors, AlP, AlAs, AlSb, AlBi, GaP, GaAs, GaSb, GaBi, InP, InAs, InSb, and InBi, on (110) surfaces are calculated using ab initio density functional theory. The obtained values are proportional to the corresponding cohesive energy and are in good agreement with available experimental data and theoretical models. The linear relationship among cohesive energy, surface energy, and work function is interpreted by analyzing their electronic properties where four (110) surfaces of Al series semiconductors, AlP, AlAs, AlSb, and AlBi, are taken as examples.

  17. Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring

    NASA Astrophysics Data System (ADS)

    Barzen, Lars; Kleinschmidt, Ann-Kathrin; Strassner, Johannes; Doering, Christoph; Fouckhardt, Henning; Bock, Wolfgang; Wahl, Michael; Kopnarski, Michael

    2015-12-01

    Reflectance anisotropy spectroscopy (RAS) can be used to monitor (reactive) ion etching (RIE) of semiconductor samples. We present results on the influence of the Cl2 content of the plasma gas on the RAS spectra during reactive ion etching. In a first step GaAs samples have been used and the RAS spectra are compared to results of secondary ion mass spectrometry (SIMS) on sample surfaces and depth profiles. In a second step a III-V semiconductor multilayer system has been investigated using the time-evolution of the average reflected intensity as an indication for the etch rate. In both cases usually even a high amount of Cl2 does not disturb the surface-sensitivity of the RAS signal.

  18. Estimation of the isotope effect on the lattice thermal conductivity of group IV and group III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Morelli, D. T.; Heremans, J. P.; Slack, G. A.

    2002-11-01

    The isotope effect on the lattice thermal conductivity for group IV and group III-V semiconductors is calculated using the Debye-Callaway model modified to include both transverse and longitudinal phonon modes explicitly. The frequency and temperature dependences of the normal and umklapp phonon-scattering rates are kept the same for all compounds. The model requires as adjustable parameters only the longitudinal and transverse phonon Grüneisen constants and the effective sample diameter. The model can quantitatively account for the observed isotope effect in diamond and germanium but not in silicon. The magnitude of the isotope effect is predicted for silicon carbide, boron nitride, and gallium nitride. In the case of boron nitride the predicted increase in the room-temperature thermal conductivity with isotopic enrichment is in excess of 100%. Finally, a more general method of estimating normal phonon-scattering rate coefficients for other types of solids is presented.

  19. Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele

    2016-01-01

    We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

  20. Atomic-scale studies of nanometer-sized graphene on III-V semiconductors using scanning tunneling microscopy.

    NASA Astrophysics Data System (ADS)

    He, Kevin; Koepke, Justin; Lyding, Joseph

    2009-03-01

    We utilize the Dry Contact Transfer (DCT) method [1] to deposit nanometer-sized, monolayer graphene flakes, in situ, onto cleaved GaAs (110) and InAs (110) surfaces. The flakes were characterized using a homebuilt, room temperature, ultrahigh-vacuum scanning tunneling microscope. We report on the apparent electronic semi-transparency of the monolayer graphene flakes, such that the underlying III-V semiconductor lattice is revealed in our topographic images. This transparency is strongly dependent on the applied sample bias, similar to results seen on SiC (1000) for large sheets of graphene grown via thermal desorption [2]. [3pt] [1] P.M. Albrecht and J.W. Lyding, APL 83, 5029 (2003). [0pt] [2] G.M. Rutter et al, Phys. Rev. B 76, 235416 (2007).

  1. Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

    NASA Astrophysics Data System (ADS)

    Schnohr, C. S.; Kluth, P.; Giulian, R.; Llewellyn, D. J.; Byrne, A. P.; Cookson, D. J.; Ridgway, M. C.

    2010-02-01

    Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50In0.50P and Ga0.47In0.53As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50In0.50P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga0.47In0.53As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss.

  2. General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

    PubMed

    Radovanovic, Pavle V; Barrelet, Carl J; Gradecak, Silvija; Qian, Fang; Lieber, Charles M

    2005-07-01

    A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices. PMID:16178248

  3. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  4. Semiconductor structural damage attendant to contact formation in III-V solar cells

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1991-01-01

    In order to keep the resistive losses in solar cells to a minimum, it is often necessary for the ohmic contacts to be heat treated to lower the metal-semiconductor contact resistivity to acceptable values. Sintering of the contacts, however can result in extensive mechanical damage of the semiconductor surface under the metallization. An investigation of the detailed mechanisms involved in the process of contact formation during heat treatment may control the structural damage incurred by the semiconductor surface to acceptable levels, while achieving the desired values of contact resistivity for the ohmic contacts. The reaction kinetics of sintered gold contacts to InP were determined. It was found that the Au-InP interaction involves three consecutive stages marked by distinct color changes observed on the surface of the Au, and that each stage is governed by a different mechanism. A detailed description of these mechanisms and options to control them are presented.

  5. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

    PubMed

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  6. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    NASA Astrophysics Data System (ADS)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  7. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    PubMed Central

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  8. Investigation of III-V magnetic semiconductor thin films and heterojunction devices

    NASA Astrophysics Data System (ADS)

    Rangaraju, Nikhil

    Magnetic field control of semiconductor device properties is of great interest for novel electronics because it offers a way to control the spin degree of freedom of charge carriers. One way to achieve this control is the use of dilute magnetic semiconductor as an active element in semiconductor devices. In this work, the relationship between the magnetic and electronic properties of magnetic bipolar heterojunction devices is examined. InMnAs/n-type heterojunctions were fabricated using metalorganic vapor phase epitaxy. The capacitace of these devices was measured at room temperature as a function of magnetic field. The capacitance of these junction increases with magnetic field by up to 1.25% at 0.5 T. The change in capacitance suggests that there is spin splitting in the material. The magnetotransport properties of InMnAs/InAs heterojunction diode were measured as a function of magnetic field from 0 to 18 T and at various temperatures. These devices exhibit excellent rectifying properties at room temperature and zero magnetic field. When a magnetic field is applied, the junctions show resistive behavior, which dominates at high magnetic fields. The magnetoresistance of these diodes was measured as a function of current. The magnetoresistance for 15 mA through the device is 2600% at 18 T. The magnetoresistance of this device is attributed to efficient spin-polarized carrier transport. The conductance behavior of InMnAs diodes in high magnetic fields is analyzed to explain the spin selective transport. The change in current through the device at a constant voltage increases linearly with magnetic field for low magnetic fields and saturates at high magnetic field. The measured field dependence of the current change is attributed to the existence of a paramagnetic component, which determines the degree of spin polarization of the junction current. This work indicates that highly spin-polarized magnetic semiconductor heterojunction devices that operate at room

  9. Plasma deposition of amorphous hydrogenated carbon films on III-V semiconductors

    NASA Technical Reports Server (NTRS)

    Pouch, John J.; Warner, Joseph D.; Liu, David C.; Alterovitz, Samuel A.

    1988-01-01

    Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.

  10. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

    SciTech Connect

    Robertson, J.; Guo, Y.; Lin, L.

    2015-03-21

    The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.

  11. Crystalline III-V semiconductor fibers and whiskers by a low-temperature solution route

    SciTech Connect

    Hickman, K.M.; Buhro, W.E.; Gibbons, P.C.

    1995-12-31

    We have developed a solution-phase synthesis of crystalline GaAs and InP, according to the equation below, that makes use of the Solution-Liquid-Solid (SLS) mechanistic pathway. The SLS mechanism is analogous to the previously known, Vapor-Liquid-Solid (VLS) mechanism, which is conducted at higher temperatures under CVD conditions. The formation of crystalline semiconductors under SLS conditions requires both a molten flux and protic catalyst to be present. The material produced consists of polycrystalline, zinc-blende fibers and whiskers with a [111] growth direction, as analyzed by selected-area diffraction in the TEM.

  12. A survey of ohmic contacts to III-V compound semiconductors

    SciTech Connect

    Baca, A.G.; Zolper, J.C.; Briggs, R.D.; Ren, F.; Pearton, S.J.

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  13. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  14. Heterostructurally integrated III-V semiconductors fabricated by wafer bonding technology

    NASA Astrophysics Data System (ADS)

    Shi, Fang Frank

    Integrating advanced microelectronic, photonic, and micromechanical devices, including nanoscale devices, into a three-dimensional architecture has become a key issue to realizing the advanced microintegrated systems for both electronic and biotechnological applications. Wafer bonding (wafer fusion) has been considered as one of the most promising technologies to integrate mismatched materials and devices into a chip level. One of the primary concerns of on-chip integration of mismatched micro- or nanodevices would be of material compatibility and interface structures at different length scales (including nanoscale), and the structural relations with the device electronic, optical, and mechanical performances. Accordingly, in the first section of this thesis work, the interface microstructures of wafer-bonded semiconductors, such as GaAs, InP, and GaN, have been systematically studied. The relations among the interface morphologies, chemistry, dislocation structures, and the wafer bonding processes have been determined. The electronic transport behaviors of both n-typed and p-typed majority and minority carriers at different wafer-bonded interface junctions with emphasis on the temporal correlations of electrical properties and interface microstructures from varied annealing processes have also been analyzed. Furthermore, the effects of the wafer rotation alignments on electrical characteristics of both n-n and p-n junctions have been investigated. Quantitative relations of interface conductivity of n-n junctions and ideality factor of p-n junctions at different alignment with varied annealing conditions have also been reported. Secondly, the adhesion, mechanical reliability, and wafer bondability of directly bonded GaAs, InP, and GaN semiconductors, together with their interfacial microfailure model, have also been carefully analyzed through the correlations between the wafer annealing processes, interface fracture energy and shear strength, and microfailure

  15. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  16. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-01

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al2O3 or HfO2 dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO2 based capacitors compared to Al2O3 based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  17. Complex Airy analysis of photoreflectance spectra for III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Estrera, J. P.; Duncan, W. M.; Glosser, R.

    1994-03-01

    We present a detailed analysis of photoreflectance (PR) spectra of semiconductors using complex Airy functions and their derivatives. We demonstrate that photoreflectance spectra can be treated in terms of a single complex Airy function with an energy-dependent broadening parameter. We show analytically and numerically that this complex Airy PR treatment is functionally equivalent within field conditions appropriate for PR to the model of R. N. Bhattacharya, H. Shen, P. Parayanthal, F. H. Pollak, T. Coutts, and A. Aharoni [Phys. Rev. B 37, 4044 (1988)], where the effects of gradient electric field and non-flat-band modulation are treated explicitly. The equivalence occurs because the field gradient and non-flat-band modulation effects are included in our model in the energy dependence of the phenomenological broadening parameter Γ*=(Γ0/ħθ)exp[δ(ħω-Eg)], where ħω is the photon energy, Eg is the band-gap energy, Γ0 is the nominal broadening at the band-gap energy, and δ is a parameter directly proportional to the electric-field gradient and modulation between two finite fields. The major utility of our model is that a single effective layer can be treated instead of a more computationally intensive laminar model. We apply our complex Airy model to bulk semiconductors such as GaAs, InP, and InxGa1-xAs. In the photoreflectance spectra of these semiconductors, our model considers three distinct but convolved features at E0 which represent the light- and heavy-hole valence bands and an exciton-impurity feature below E0. At E0+Δ0 our model considers two features which are related to the spin-orbit-split valence band and a second state just below this critical point. For GaAs, we determined from our PR modeling that the band-gap energy for these films was 1.422+/-0.003 eV, which agreed, within experimental error, with the band-gap energy measured by room-temperature photoluminescence. A feature was found below the E0 gap in the GaAs samples with energies

  18. Growth and Characterization of III-V Semiconductors for Device Applications

    NASA Technical Reports Server (NTRS)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  19. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Hossain, Mohammed Imrul

    Intersubband transitions (ISBTs) in the conduction band (CB) of semiconductor multiple quantum wells (QW) have led to devices, like quantum-well infrared photodetectors and quantum cascade lasers (QCL). Due to the complexities related to the valence band (VB), hole ISBTs have not been explored as intensively as their electronic counterparts. Absorption and photoluminescence due to ISBT in the VB have been reported for p-type Si-SiGe QWs but this material system suffers from significant challenges associated with the built-in strain of these lattice mismatched materials. The GaAs/AlGaAs material system is virtually strain-free and quite mature. We are investigating the properties of bound-to-bound inter-valence subband transitions in GaAs QWs with high Al composition barriers for mid-infrared emitters. Hole ISBTs are interesting because the polarization of the light emitted in heavy-to-light hole transitions is not restricted to the perpendicular of the quantum wells (unlike electron ISBTs in the CB due to selection rules), therefore surface emitting QCLs and ultimately vertical-cavity surface emitting devices are possible using these transitions. Moreover the valence-band offset for pure GaAs and AlAs is comparable with the conduction-band offset in the traditional InGaAs/InAlAs lattice matched to InP system. Very recently we have observed strong heavy to light hole absorption and heavy to heavy hole electroluminescence from ridge waveguide structures in the mid infra-red range. We are also investigating dual wavelength mid infra-red QCLs in the InGaAs/InAlAs system lattice matched to InP. This device may be useful in applications like differential absorption lidar where light has to be evaluated and compared at two different frequencies for environmental sensing application. Most approaches to multi-wavelength QCL operation involve the use of heterogeneous cascades. Our design involves a single type of active region, emitting at two widely different wavelengths in

  20. The Mechanical Properties of III-V Compound Semiconductors Used in High Efficiency Multijunction Photovoltaic Cells

    NASA Astrophysics Data System (ADS)

    Zakaria, Abdallah

    Lattice-mismatched heteroepitaxy enables the fabrication of metamorphic solar cells that have reached record light conversion efficiencies in the last five years. These devices are accelerating the commercialization of concentrator photovoltaics that can compete with fossil fuels for terrestrial energy production. A critical part of metamorphic structures is the graded buffer layer (GBL) needed to progressively change the lattice constant of the substrate to that the epilayer of interest. The effectiveness of the graded buffer layer in relieving misfit strain affects the quality of the device grown and depends on a variety of parameters. This study focuses on the mechanical properties of semiconductor compounds used in graded buffer layers. First, the effect of compound semiconductor spontaneous atomic ordering on hardness is assessed. In1--xGaxP was deposited on Ge wafers in two structures. A surfactant was used in experiment A to induce a lower degree of order. High resolution x-ray diffraction (HRXRD) estimated a theoretical band gap energy Eg corrected for strain effects. Photoluminescence measured the actual Eg. By comparing the two, the degree of order eta was determined to be 0.12-0.15 for samples A and 0.43-0.44 for samples B. Atomic force microscopy (AFM) demonstrated that all wafers had an equivalent surface roughness of 6.1-7.4 A. Nanoindentation measurements determined that the degree of order has no effect on the hardness of InGaP. Using 1/2 (115) superlattice reflection scans, the InGaP ordered domains size was estimated to be 28.5 nm for sample B1. No superlattice peak was detected in sample A1. The large ordered domain size in B1 explains why no order-hardening behavior was observed in InGaP. Second, a correlation between the composition of a ternary compound semiconductor and hardness is established and the effect of oxidation is determined. A structure consisting of three different AlxGa1--xAs layers separated by In0.01Ga0.99As etch stops was

  1. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  2. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGESBeta

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  3. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    PubMed

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology. PMID:26716200

  4. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  5. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D.

    2016-04-01

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2-3 × 1017 cm-3) for an injected excess carrier concentration below 4 × 1012 cm-3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  6. Covalent Attachment to GaP(110) - Engineering the Chemical Functionalization of a III-V Semiconductor

    NASA Astrophysics Data System (ADS)

    Bradley, A. J.; Ugeda, M. M.; Liu, Wenjun; Yu, Min; Tilley, T. Don; Pérez, Rubén; Neaton, Jeffrey B.; Crommie, M. F.

    2014-03-01

    With its 2.3 eV bulk bandgap, relatively high conduction band edge, and low chemical reactivity, the (110) surface of GaP is an excellent candidate for many UV and visible light applications, such as photo-catalysis and light-induced chemical reduction. However, the reconstruction and resulting charge transfer of the surface makes it difficult to covalently attach the required molecules. Indeed, very little work has been done to understand either covalent functionalization or passivation of this surface. Here we report on a Staudinger-type, thermally-driven covalent attachment of perfluorophenyl azide (pfpa) to GaP(110). We have studied the adsorption of pfpa molecules by means of high-resolution scanning tunneling microscopy and spectroscopy in combination with first principles calculations. We show a progression from a physisorbed state at room temperature to a covalently attached state after exposure to slightly higher temperatures (~ 50°C). The developed approach is expected to be valid for various other functional groups attached to the azide, as well as other III-V semiconductors.

  7. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  8. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  9. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    SciTech Connect

    Fowler, Bruce A. Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-11-15

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  10. Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    NASA Astrophysics Data System (ADS)

    Haneji, Nobuo; Segami, Goh; Ide, Tomoyoshi; Suzuki, Tatsuya; Arakawa, Taro; Tada, Kunio; Shimogaki, Yukihiro; Nakano, Yoshiaki

    2003-06-01

    Electron cyclotron resonance-reactive ion etching (ECR-RIE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching III-V semiconductors, but the carbon polymer film deposited on the surface during the etching process presents some problems. Thus, the polymer film must be ashed off using an O2 plasma. We introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIE, and demonstrated that it was very useful for etching of InP. However, compound semiconductors containing Al (e.g., AlGaAs and InAlAs) react with oxygen and an alumina layer is formed, which cannot be etched by CH4/H2 etching. Therefore, we used a new cyclic etching process with constant Ar flow in the chamber to remove this alumina layer by Ar ion etching, and obtained good results for etching rate and surface morphology for the compound semiconductors containing Al. We also proposed a suitable combination of three cyclic etching procedures (continuous etching, cyclic etching without constant Ar flow and cyclic etching with constant Ar flow) for etching the multilayer heterostructure of III-V semiconductors including InP and/or compound semiconductors containing Al.

  11. Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    NASA Astrophysics Data System (ADS)

    Yang, Ping-Fan; Guo, Yong

    2016-02-01

    We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of "smoothing out" the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

  12. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  13. AES and EELS tools associated to TRIM simulation methods to study nanostructures on III-V semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Ouerdane, A.; Bouslama, M.; Ghaffour, M.; Abdellaoui, A.; Nouri, A.; Hamaida, K.; Monteuil, Y.

    2012-02-01

    At low energy (300 eV), the Ar+ ions bombardment lead to the formation of small nanodots on the InP and the InSb surface compounds. We used the Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) to detect the presence of these features. However, these techniques alone do not allow us to determine with accuracy their disturbed dimension related to the height and periodicity. For this reason, we combine these spectroscopy methods with the TRIM (transport and range of ions in matter), SRIM (Stopping and Range of Ion in Matter) and Sigmund simulation methods to show the mechanism of interaction between the argon ions and the III-V compounds cited above and determine the dimension of disturbed areas as a function of Ar+ energy during 30 min.

  14. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  15. Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

    NASA Astrophysics Data System (ADS)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey; Cardimona, David; Krishna, Sanjay

    For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

  16. Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Dixit, Vijay K.; Bhat, Handady L.

    Materials for the generation and detection of 7-12 μm wavelength radiation continue to be of considerable interest for many applications such as night vision, medical imaging, sensitive pollution gas monitoring, etc. For such applications HgCdTe has been the main material of choice in the past. However, HgCdTe lacks stability and uniformity over a large area, and only works under cryogenic conditions. Because of these problems, antimony-based III-V materials have been considered as alternatives. Consequently, there has been a tremendous growth in research activity on InSb-based systems. In fact, InSb-based compounds have proved to be interesting materials for both basic and applied research. This chapter presents a comprehensive account of research carried out so far. It explores the materials aspects of indium antimonide (InSb), indium bismuth antimonide (InBi x Sb1-x ), indium arsenic antimonide (InAs x Sb1-x ), and indium bismuth arsenic antimonide (InBi x As y Sb1-x-y ) in terms of crystal growth in bulk and epitaxial forms and interesting device feasibility. The limiting single-phase composition of InAs x Sb1-x and InBi x Sb1-x using near-equilibrium technique has been also addressed. An overview of the structural, transport, optical, and device-related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as device applications are discussed. These include the role of defects and impurity on structural, optical, and electrical properties of the materials.

  17. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

    DOE PAGESBeta

    Liu, Sheng; Keeler, Gordon A.; Reno, John L.; Sinclair, Michael B.; Brener, Igal

    2016-06-10

    We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.

  18. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    SciTech Connect

    Hurle, D. T. J.

    2010-06-15

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature 'intrinsic' electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the Ga{sub Sb} antisite defect appears to be grown-in from the melt. This contrasts with the As{sub Ga} defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n{sup +} GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and In

  19. Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications

    SciTech Connect

    Ashby, Carol I.H.

    1999-05-19

    Wet oxidation of high-Al-content AIGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation of high-Al-content AlGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation has also been considered as a route to the long-sought goal of a IH-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here.

  20. Extraordinary Magnetoresistance At Room Temperature In Non-Magnetic Narrow-Gap Semiconductor/Metal Composites

    NASA Astrophysics Data System (ADS)

    Solin, S. A.

    2001-03-01

    The magnetoresistance (MR) of a material object contains a physical contribution from the magnetic field dependence of the material parameters such as the mobility or carrier concentration and a geometric contribution from the dependence of the current path and output voltage on the sample shape and electrode configuration. To date, only two classes of magnetic materials, artificially layered metals which exhibit giant MR (GMR) and the manganite perovskites which exhibit colossal MR (CMR) have been considered serious candidates in the effort to improve the room temperature (RT) performance of MR sensors. For both of these classes, the physical MR dominates. In contrast, we have found that non-magnetic narrow-gap semiconductors containing patterned metallic inhomogeneities (shunts), exhibit RT geometric extraordinary MR (EMR) orders of magnitude larger than the physical MR of other materials. EMR in excess of 2000% at 0.05 Tesla and 3,000,000% at 5 T, respectively, has been observed in macroscopic ( ~ 1 mm) composite structures of InSb with patterned internal or external shunts.(S.A. Solin et al., Science 289), 1530 (2000).^,(T. Zhou, D.R. Hines and S.A. Solin, Appl. Phys. Lett., submitted.) We have been able to quantitatively account for the magnitude of the observed EMR as well as its dependence on the geometry (shape, size and placement of the shunt) using both analytic (Laplace equation with boundary conditions) and computational (Finite Element Analysis)(see the talk by L.R. Ram-Mohan et al., this conference) methods. The effect of scaling EMR structures to mesoscopic dimensions and the possible technological impact of EMR will be discussed.

  1. High-speed guided-wave electro-optic modulators and polarization converters in III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Rahmatian, Farnoosh

    In the last few decades, the need for electronic communication has increased by several orders of magnitude. Due to the rapid growth of the demand for transmission bandwidth, development of very high-speed communication systems is crucial. This thesis describes integrated-optic electro-optic modulators using travelling-wave electrodes in compound semiconductors for ultra-high-speed guided-wave optical communications. Both Mach-Zehnder (MZ) interferometric modulators and polarization converters (PC) have been studied with particular emphasis on the latter ones. Slow-wave travelling-wave electrodes in compound semiconductors have previously been proposed and demonstrated. Here, a study of slow-wave, travelling-wave electrodes on compound semiconductors has been performed in order to significantly improve their use in ultra-wide-band guided-wave electro-optic devices. The most important factors limiting the high frequency performance of such devices, in general, are the microwave-lightwave velocity mismatch and the microwave loss on the electrodes. Based on the deeper understanding acquired through our study, we have designed, fabricated, and tested low-loss, slow-wave, travelling-wave electrodes on semi- insulating GaAs (SI-GaAs) and AlGaAs/GaAs substrates. Microwave-to-lightwave velocity matching within 1% was achieved using slow-wave coplanar strip electrodes; many of the electrodes had effective microwave indices in the range 3.3 to 3.4 (measured at frequencies up to 40 GHz). For the electrodes fabricated on SI-GaAs substrates, microwave losses of 0.22 Np/cm and 0.34 Np/cm (average values at 40 GHz) were measured for the slow-wave coplanar strip and the slow-wave coplanar waveguide electrodes, respectively. For the electrodes fabricated on the AlGaAs/GaAs substrates containing the modulators, the corresponding losses were, on average, 0.17 Np/cm higher at 40 GHz. For the first time, ultra-wide-band polarization converters using slow-wave electrodes have been

  2. Wave Function Mixing and g-Factors in Narrow Gap Ferromagnetic III-V Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Sanders, G. D.; Stanton, C. J.

    2002-03-01

    We present a theory for wave-function mixing and g-factors in ferromagnetic p-doped narrow gap In_1-xMn_xAs dilute magnetic semiconductor alloys in an ultrahigh external magnetic field, B. We generalize an 8 band Pidgeon-Brown model to include (i) the wavevector, k, dependence of the electronic states along B, (ii) s-d and p-d exchange interactions with localized Mn d-electrons, and (iii) finite magnetic moment in the ferromagnetic state. The complex valence band structure at finite k plays an important role in the cyclotron resonance spectra. We look at the band-mixing and spin-dependence of the wave functions as a function of the wavevector, magnetic field (0-100T), temperature (4 K to 290 K), and Mn concentration (0 to 12 %). From this, we can extract magnetic field dependent g-factors. The sensitivity of the band mixing and g-factors to the s-d and p-d exchange interactions is also investigated. Finally, we look at the effect of band-mixing on optical properties such as the polarization dependence of the absorption and luminescence.

  3. Enhanced Infrared Magneto-Optical Response of the Nonmagnetic Semiconductor BiTeI Driven by Bulk Rashba Splitting

    NASA Astrophysics Data System (ADS)

    Demkó, L.; Schober, G. A. H.; Kocsis, V.; Bahramy, M. S.; Murakawa, H.; Lee, J. S.; Kézsmárki, I.; Arita, R.; Nagaosa, N.; Tokura, Y.

    2012-10-01

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  4. III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

    NASA Astrophysics Data System (ADS)

    Chiu, YenTing

    This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

  5. Hybrid III-V/silicon lasers

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  6. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  7. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    SciTech Connect

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang; Gao, Kun; Helm, M.; Weschke, E.; Gordan, O.; Salvan, G.; Zahn, D. R. T.

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  8. Dry etching of III-V nitrides

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; McLane, G.F.; Constantine, C.

    1995-12-01

    The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

  9. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Webster, P. T.; Shalindar, A. J.; Riordan, N. A.; Gogineni, C.; Liang, H.; Sharma, A. R.; Johnson, S. R.

    2016-06-01

    The optical properties of bulk InAs0.936Bi0.064 grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs0.936Bi0.064 as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs0.911Sb0.089 and GaSb/InAs0.932Bi0.068 and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice is grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.

  10. The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

  11. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    NASA Astrophysics Data System (ADS)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  12. Rapid growth of localized nature of carriers in the Kondo semiconductor CeFe2Al10 with nonmagnetic ground state due to small Rh doping

    NASA Astrophysics Data System (ADS)

    Tanida, H.; Nakamura, M.; Sera, M.; Nishioka, T.; Matsumura, M.

    2015-12-01

    We examined the chemical doping effect on the Kondo semiconductor CeFe2Al10 with a nonmagnetic ground state by means of the magnetic susceptibility, specific heat, electrical resistivity, and thermopower. The effect of Ru doping on the ground state is small. On the other hand, by a small amount of Rh doping, the magnetic susceptibility is strongly enhanced along the orthorhombic a axis, and a Curie-Weiss behavior is observed in a wide temperature range. The low-temperature specific heat is also strongly enhanced by the doping, and a metallic ground state is realized at low temperatures. These results suggest the collapse of the spin and charge gap due to the suppression of the c -f hybridization effect. From the results of a crystalline electric field analysis on the magnetic susceptibility of Ce (Fe1 -xRhx )2Al10 , it was revealed that the Rh-doping effect on the c -f hybridization effect is anisotropic, especially for the a axis. Similar doping effects are seen in the Rh-doped CeRu2Al10 , Ir-doped CeOs2Al10 , and Si-doped CeRu2Al10 . From these results, we conclude that the collapse of the spin and charge gap by such an excess electron doping is one of the universal features of the Kondo semiconductor Ce T2Al10 (T = Fe, Ru, and Os).

  13. Nontrivial Z2 topology in bismuth-based III-V compounds

    NASA Astrophysics Data System (ADS)

    Huang, Huaqing; Liu, Jianpeng; Duan, Wenhui

    2014-11-01

    Realizing topological insulators in commonly used III-V semiconductors is of great importance for their potential application in spintronics and quantum computing. Here we propose a general strategy to realize topological insulators in conventional III-V semiconductors by bismuth substitution and external strain. Based on first-principles calculations, we identify that AlBi (GaBi and InBi) become topological insulators (semimetals) under proper external strain by directly calculating Z2 invariants and surface states. Furthermore, we demonstrate that a topological phase transition can be induced by Bi substitution in common III-V semiconductors like GaAs. These proposed topological insulators can be easily integrated into various semiconductor electronic devices and modulated by well-developed modern semiconductor technologies.

  14. III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

    SciTech Connect

    Prucnal, Slawomir Zhou, Shengqiang; Ou, Xin; Facsko, Stefan; Oskar Liedke, Maciej; Bregolin, Felipe; Liedke, Bartosz; Grebing, Jochen; Fritzsche, Monika; Hübner, Rene; Mücklich, Arndt; Rebohle, Lars; Skorupa, Wolfgang; Helm, Manfred; Turek, Marcin; Drozdziel, Andrzej

    2014-02-21

    The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.

  15. Novel integration technique for silicon/III-V hybrid laser.

    PubMed

    Dong, Po; Hu, Ting-Chen; Liow, Tsung-Yang; Chen, Young-Kai; Xie, Chongjin; Luo, Xianshu; Lo, Guo-Qiang; Kopf, Rose; Tate, Alaric

    2014-11-01

    Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique. PMID:25401832

  16. Investigation of new semiinsulating behavior of III-V compounds

    NASA Technical Reports Server (NTRS)

    Lagowski, Jacek

    1990-01-01

    The investigation of defect interactions and properties related to semiinsulating behavior of III-V semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations. The studies of new compensation mechanisms involving transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs, InP and also in ternary compounds InGaAs. The experimental data provided basis for the verification of chemical trends and the VRBE method. They also defined compositional range for III-V mixed crystals whereby semiinsulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/acceptor impurities.

  17. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  18. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  19. Structural and electronic properties of III-V bismuth compounds

    NASA Astrophysics Data System (ADS)

    Ferhat, M.; Zaoui, A.

    2006-03-01

    We have performed ab initio self-consistent calculations based on the full potential linear augmented plane-wave method with the generalized gradient approximation to investigate the structural and the electronic properties of the less known bismuth III-V compounds: BBi, AlBi, GaBi, and InBi. Ground state parameters are computed and compared with available theoretical and experimental works. The zinc-blende phase is found to be the most stable for BBi, AlBi, and GaBi, while InBi prefers the tetragonal PbO structure. The relativistic contraction of the 6s orbital of Bi has strong effect on the band structure of III-Bi compounds, which exhibits some features that differ considerably from those of typical III-V semiconductors. In particular, we found an inverted band gap, which reflects a semimetallic character of these systems. Their bonding nature is analyzed in terms of valence charge density transfer, showing three different natures of the bond. Besides, the calculated valence charge density for BBi shows an anomalous behavior characterized by a charge transfer toward the cation B atom, while the others III-Bi behave as the typical III-V compounds with a small charge transfer to the anion bismuth atom.

  20. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    NASA Astrophysics Data System (ADS)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  1. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    PubMed Central

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  2. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    PubMed

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  3. Precise measurement of charged defects in III-V compounds (supplement 2)

    NASA Technical Reports Server (NTRS)

    Soest, J. F.

    1973-01-01

    Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.

  4. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.

    1998-12-08

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

  5. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.

    1998-01-01

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

  6. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    DOEpatents

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  7. Combinatorial approaches to understanding polytypism in III-V nanowires.

    PubMed

    Johansson, Jonas; Bolinsson, Jessica; Ek, Martin; Caroff, Philippe; Dick, Kimberly A

    2012-07-24

    Polytypism in III-V semiconductor nanowires is a topic that has received considerable attention in recent years. Achieving a pure nanowire crystal phase requires well-controlled and advanced parameter tuning for most III-V materials. Additionally, the new and unusual phases sometimes observed may present unique material properties if they can be controllably fabricated. With the prospect of using nanowires in applications within several different fields (including electronics, photonics, and life science), theoretical models are necessary to explain experimental trends and to attain a high level of crystal phase control. At present, there is no theoretical model (or combination of models) that fully explains how and why nanowire crystal structures commonly include several different polytypes. Here we use combinatorics and interlayer interactions to include higher order polytypes (4H and 6H) with the aim to explain nanowire crystal structure beyond the well-investigated zinc blende-wurtzite polytypism. Predictions from our theoretical models compare well with experimental results. PMID:22681568

  8. Model of selective growth of III-V nanowires

    NASA Astrophysics Data System (ADS)

    Dubrovskii, V. G.

    2015-12-01

    A kinetic model of growth of nanowires of III-V semiconductor compounds (including nitride ones) in the absence of metal catalyst is proposed; these conditions correspond to the methods of selective epitaxy or self-induced growth. A stationary solution for the nanowire growth rate is obtained, which indicates that the growth can be limited by not only the kinetics of III-group element with allowance for the surface diffusion (as was suggested earlier), but also the flow of the V-group element. Different modes are characterized by radically different dependences of the growth rate on the nanowire radius. Under arsenicenriched conditions, a typical dependence with a maximum and decay at large radii (limited by the gallium adatom diffusion) is observed. Under gallium-enriched conditions, there is a transition to the growth rate that is practically independent of the radius and linearly increases with an increase in the arsenic flow.

  9. III V nitride based light-emitting devices

    NASA Astrophysics Data System (ADS)

    Nakamura, Shuji

    1997-04-01

    High brightness InGaN single-quantum-well structure (SQW) blue and green light-emitting diodes (LEDs) with luminous intensities of 2 cd and 10 cd have been achieved and commercialized. By combining these high-power and high-brightness blue InGaN SQW LED, green InGaN SQW LED and red AlInGaP LED, many kinds of applications, such as LED full-color displays and LED white lamps for use in place of incandescent or fluorescent lamps, are now possible with characteristics of high reliability, high durability and low energy consumption. Also, very recently, III-V nitride based laser diodes (LDs) were fabricated for the first time. These LDs emitted coherent light at 390-440 nm from an InGaN based multi-quantum-well structure at room temperature. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

  10. III-V Nanowire Array Growth by Selective Area Epitaxy

    NASA Astrophysics Data System (ADS)

    Chu, Hyung-Joon; Yeh, Tingwei; Stewart, Lawrence; Dapkus, P. Daniel

    2011-12-01

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH3 decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  11. III-V Nanowire Array Growth by Selective Area Epitaxy

    SciTech Connect

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Tingwei; Dapkus, P. Daniel

    2011-12-23

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH{sub 3} decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  12. Preservation of surface features on semiconductor surfaces

    SciTech Connect

    Wilt, D.P.

    1989-02-14

    A semiconductor laser is described comprising a Group III-V compound semiconductor body having a major surface, p1 an optical grating on the major surface, a protective coating on the grating, the coating including a transition metal, a Group III-V compound semiconductor heterostructure formed on the coating, the heterostructure having the shape of a mesa and including a Group III-V compound semiconductor active layer, a current-blocking Group III-V compound semiconductor structure laterally adjacent the mesa and effective to direct the primary flow of current through the mesa during operation of the laser, and means forming electrical contact to the laser.

  13. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  14. Microstructural evaluation of heteroepitaxial III-V semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Chen, Eric Brice

    Microstructural features of single and multilayered strained (In xGa1-xAs/GaAs, (Al)GaAs1-ySb y/GaAs) and unstrained (In0.49Ga0.51P/GaAs) heteroepitaxial structures were evaluated. During growth of a 1.5% mismatched InxGa 1-xAs layer on GaAs at 470°C, real-time multibeam optical stress sensor measurements revealed an unexpected shoulder in the strain-thickness profile. Real-time data was used to pause film growth at pre-determined stress-states surrounding the shoulder region (pre-, mid- and post-shoulder) to probe its origin. Dislocation structure of each stress-state was characterized by transmission electron microscopy. The shoulder coincided with reactions between 60° dislocations forming edge dislocations, suggesting an increased dislocation mobility which is required for multiplication. Dislocation half-loops were observed via cross-sectional microscopy, resulting in rapid relaxation of the film. In-graded (InxGa1-xAs) and Sb-graded (Al0.5Ga0.5As1-ySby, GaAs 1-ySby) compositionally step-graded multilayer buffers were analyzed to determine the optimal alloy for preventing the propagation of threading dislocations to the epitaxial surface. Multilayers were graded from a lattice parameter of 0.564 nm to 0.591 nm (4.6% mismatch) over a 1 mum film thickness. Threading dislocation density in the top-most layer of the Sb-graded structures (≤109 cm-2) was lower than the In-graded alloy (>1010 cm-2). In the InxGa1-xAs structure, threading dislocations were observed to congregate in discrete channels directly correlated to surface crosshatches. As/Sb compositional modulations in the Sb-graded structures reveal a more planar growth surface, preventing threading dislocation trapping. Characterization of dislocation structure indicated a directional asymmetry in the 60° and edge dislocation density for the GaAs1-ySb y multilayer. Replacing Ga with Al0.5Ga0.5 in the Sb-graded ternary improved planarity, resulting in a more uniform dislocation density. Residual strain (calculated from quantitative x-ray analysis and dislocation density) in each of the buffer layers was within the bounds predicted by existing relaxation models and dependent upon lattice mismatch strain. Lattice-matched In0.49Ga0.51P-GaAs junctions as active regions of a heterojuction bipolar transistor were evaluated by high-resolution transmission electron microscopy and related to device performance. Microscopy was established as a feasible technique for characterizing interfacial roughness which was related to interface crystal quality (quantified by reverse-biased leakage currents) but not low-voltage device performance.

  15. III-V semiconductor quantum well and superlattice detectors

    NASA Astrophysics Data System (ADS)

    Walther, Martin; Fuchs, Frank; Schneider, Harald; Fleissner, Joachim; Schmitz, J.; Pletschen, Wilfried; Braunstein, Juergen; Ziegler, Johann; Cabanski, Wolfgang A.; Koidl, Peter; Weimann, Guenter

    1998-10-01

    The paper reviews the development of IR detectors for the 8 - 12 micrometer wavelength range based on GaAs/AlGaAs quantum well structures and InAs/(GaIn)Sb short-period superlattices (SPSLs) at the Fraunhofer-Institute IAF. Photoconductive GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are used for the fabrication of starring IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared (LWIR) camera, devleoped in cooperation with AEG Infrarot-Module (AIM), consists of a two-dimensional focal plane array (FPA) with 256 X 256 detector elements, flip- chip bonded to a read-out integrated circuit (ROIC). The technology for the fabrication of FPAs, electrical and optical properties of single detector elements in the two-dimensional arrangement and the properties of the LWIR camera system are reported. A noise equivalent temperature difference (NETD) below 10 mK has been measured at an operation temperature of T equals 65 K with an integration time of 20 ms. More than 99.8% of all pixels are working and no cluster defects are observed. InAs/(GaIn)Sb SPSLs with a broken gap type-II band alignment are well suited for the fabrication of IR detectors covering the 3 - 12 micrometer spectral range. Due to the lattice mismatch of the InAs/(GaIn)Sb SPSL with respect to GaSb, tight control of thickness and composition of the layers and a controlled formation of the chemical bonds across the interface in the SPSLs are used for strain compensation. Photodiodes with a cut-off wavelength (lambda) c equals 8 micrometer and a current responsivity R(lambda ) equals 2 A/W exhibit a dynamic impedance of R0A equals 1k(Omega) cm2 at T equals 77 K. This leads to a Johnson- noise limited detectivity in excess of D* equals 1 X 1012 cm(Hz)1/2/W for these type of detectors.

  16. Dopant Profiling of III-V Nanostructures for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Ford, Alexandra Caroline

    2011-12-01

    High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO 2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of ˜4,000 cm2/Vs and ION/IOFF ˜104. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (˜400 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5--10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (˜1 nm thick). Top-gated FETs exhibit a peak transconductance of ˜1.6 mS/microm at V DS=0.5V with ION/I OFF >104 and subthreshold swings of 107--150 mV/decade for a channel length of ˜0.5 microm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are

  17. III-V nanowires and nanowire optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yunyan; Wu, Jiang; Aagesen, Martin; Liu, Huiyun

    2015-11-01

    III-V nanowires (NWs) have been envisioned as nanoscale materials for next-generation technology with good functionality, superior performance, high integration ability and low cost, because of their special growth modes and unique 1D structure. In this review, we summarize the main challenges and important progress of the fabrication and applications of III-V NWs. We start with the III-V NW growth, that significantly influences the NW morphology and crystal quality. Attention is then given to the fabrication of some advanced III-V structures composed of axial and radial junctions. After that, we review the advantages, challenges, and major breakthroughs of using III-V NWs as solar energy harvesters and light emitters. Finally, we attempt to give a perspective look on the future development trends and the remaining challenges in the research field of III-V NWs.

  18. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    NASA Astrophysics Data System (ADS)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  19. Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

    NASA Astrophysics Data System (ADS)

    Chizmeshya, Andrew; Kouvetakis, John

    2014-03-01

    Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

  20. Antimony Based III-V Thermophotovoltaic Devices

    SciTech Connect

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  1. Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

    PubMed

    Dhoore, Sören; Uvin, Sarah; Van Thourhout, Dries; Morthier, Geert; Roelkens, Gunther

    2016-06-13

    We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits. PMID:27410317

  2. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates

    NASA Astrophysics Data System (ADS)

    He, Gang; Chen, Xiaoshuang; Sun, Zhaoqi

    2013-03-01

    Recently, III-V materials have been extensively studied as potential candidates for post-Si complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle to implement III-V compound semiconductors for CMOS applications is the lack of high quality and thermodynamically stable insulators with low interface trap densities. Due to their excellent thermal stability and relatively high dielectric constants, Hf-based high-k gate dielectrics have been recently highlighted as the most promising high-k dielectrics for III-V-based devices. This paper provides an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. To address the impact of these hafnium based materials, their interfaces with GaAs as well as a variety of semiconductors are discussed. After that, the integration issues are highlighted, including the development of high-k deposition without Fermi level pinning, surface passivation and interface state, and integration of novel device structure with Si technology. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.

  3. III-V High-Efficiency Multijunction Photovoltaics (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for III-V High-Efficiency Multijunction Photovoltaics at the National Center for Photovoltaics.

  4. III-V nitrides and performance of graphene on copper plasmonic biosensor

    NASA Astrophysics Data System (ADS)

    Mohanty, Goutam; Sahoo, Bijaya Kumar

    2016-05-01

    In the present study, the influence of iii-v nitrides as well as Ge and Si on the sensitivity and performance of a graphene protected copper plasmonic biosensor has been investigated. These semiconductors have been used between copper (Cu) and graphene layers on a SF 10 glass prism. The sensitivity and performance of the biosensor has been computed for with and without semiconductors. III-V nitrides demonstrated high sensitivity and high figure of merit (FOM) in comparison to Si and Ge due to their superior electronic and optical properties. The enhancement of evanescent electric field due to Si, Ge, AlN, GaN and InN have been computed and found highest enhancement for InN. This happens due to high refractive index of InN than other semiconductors. Analysis shows that for a high sensitive imaging biosensor the required optimal thickness of copper, InN and graphene are respectively 32 nm, 13 nm and 0.34 nm for light of wavelength λ = 633 nm (red Hesbnd Ne laser). This study suggests that InN would be a better choice for fabrication of new imaging plasmonic biosensors for chemical and biological sensing.

  5. Progress Towards III-V Photovoltaics on Flexible Substrates

    NASA Technical Reports Server (NTRS)

    McNatt, Jeremiah S.; Pal, AnnaMaria T.; Clark, Eric B.; Sayir, Ali; Raffaelle, Ryne P.; Bailey, Christopher G.; Hubbard, Seth M.; Maurer, William F.; Fritzemeier, Les

    2008-01-01

    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

  6. Ultraviolet photodetectors and imaging arrays based on III-V nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Brown, Jeffrey David

    2000-10-01

    The III-V nitride class of compound semiconductors has received much attention in the last decade. These materials have a wide, direct bandgap, making them a prime candidate for optoelectronic devices in the blue, green, and ultraviolet spectral regions. These materials exhibit impressive optical, electrical, and thermal properties, even though there are fundamental materials issues that are thus far unresolved. This work explores the application of III-V nitride semiconductors to optical detectors in the ultraviolet region of the electromagnetic spectrum. Metalorganic vapor phase epitaxy was used to synthesize thin film p-i-n photodiode structures on double side polished sapphire substrates; these films were characterized for optical, electrical and structural properties. The grown structures were designed to respond to a predetermined region of the UV spectrum when illuminated from the substrate side. These structures were fabricated into devices using generally accepted techniques for dry etching and p and n-contact metallizations. Test devices were characterized using tools developed by the author. These devices demonstrated as high as 80% quantum efficiency and extremely low dark currents; resulting in spectral detectivities as large as 6 * 1013 cmHz1/2W-1. Devices were designed and demonstrated for a series of detection regions ranging from 365 nm to 250 nm. Photolithography masks were designed to allow the fabrication of photodiode arrays that would hybridize to commercially available CMOS based readout integrated circuits (ROICs), used routinely for infrared photodiode imaging. Photodiode arrays were fabricated and indium bumps were deposited onto the diode contacts and the ROICs to provide electrical connection. The hybrid detector arrays were placed in leadless chip carriers, wirebonded, and connected to commercially available drive and readout circuitry. Images of UV scenes were focused onto the arrays using fused quartz lenses. These images and movies

  7. The III-V photocathode - A major detector development.

    NASA Technical Reports Server (NTRS)

    Spicer, W. E.; Bell, R. L.

    1972-01-01

    Description of new (III-V) photocathodes which show improvements in sensitivity of as much as ten to a hundred times over conventional cathodes in the near infrared and useful improvements at shorter wavelengths. The development stems from a combination of basic knowledge of the photoemission process, gained in the 1950s, and the advancing understanding of the technology of III-V materials, in the 1960s. The superior performance of these cathodes is due to the fact that the vacuum level at the surface lies below the bottom of the conduction band in the bulk of the material. Consequently, the threshold of response is set by the III-V bandgap. The bandgap (and the threshold of response) can be varied by alloying different III-V materials together. A reduction in thermionic emission is realized with these cathodes. At present no semitransparent III-V cathodes with comparably interesting performance are available. The problems hindering further improvements, as well as the problems of placing these cathodes in practical multipliers and image tubes, are discussed briefly.

  8. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

    PubMed Central

    2012-01-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

  9. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    PubMed

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-01-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

  10. All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

    PubMed

    Wu, Yingchen; Huang, Qiangsheng; Keyvaninia, Shahram; Katumba, Andrew; Zhang, Jing; Xie, Weiqiang; Morthier, Geert; He, Jian-Jun; Roelkens, Gunther

    2016-09-01

    We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion. PMID:27607638

  11. III-V/Si hybrid photonic devices by direct fusion bonding.

    PubMed

    Tanabe, Katsuaki; Watanabe, Katsuyuki; Arakawa, Yasuhiko

    2012-01-01

    Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration. PMID:22470842

  12. III-V/Si hybrid photonic devices by direct fusion bonding

    PubMed Central

    Tanabe, Katsuaki; Watanabe, Katsuyuki; Arakawa, Yasuhiko

    2012-01-01

    Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration. PMID:22470842

  13. Radiation effects on III-V heterostructure devices

    NASA Astrophysics Data System (ADS)

    Jun, Bongim

    The neutron and electron radiation effects in III-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InGaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation-induced degradation effects in HEMTs and HIGFETs are developed. The most prominent radiation effects appearing on both HEMT and HIGFET devices are increase of threshold voltage (VT) and decrease of transconductance (gm) as radiation dose increases. These effects are responsible for drain current degradation under given bias conditions after irradiation. From our experimental neutron irradiation study and our theoretical models, we concluded that threshold voltage increase is due to the radiation-induced acceptor-like (negatively charged) traps in the GaAs channel region removing carriers. The mobility degradation in the channel is responsible for gm decrease. Series resistance increase is also related to carrier removal and mobility degradation. Traps introduced in the GaAs region affect the device performance more than the traps in the AlGaAs doped region. V T and gm of HIGFET devices are less affected by neutron radiation than they are in HEMTs. This difference is attributed to different shapes of the quantum well in the two devices. The main effects of electron and neutron irradiation of SHBTs are decrease of collector current (IC), decrease of common-emitter DC gain, increase of the collector output conductance (DeltaI C/DeltaVCE), and increase of collector-collector offset voltage. The decrease of breakdown voltage of reverse biased base-emitter junction diode is responsible for

  14. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  15. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  16. Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds

    SciTech Connect

    Schallenberg, T.; Brunner, K.; Borzenko, T.; Molenkamp, L.W.; Karczewski, G.

    2005-07-01

    We present a comprehensive discussion of molecular-beam epitaxy of III-V compound semiconductors through shadow masks. Based on model calculations and growth experiments, we examine how the surface diffusion and the incorporation of group-III adatoms depend on the growth configuration, group-III and group-V fluxes, and the crystal orientation. According to a macroscopic diffusion model, gradients of the group-V flux drive the unidirectional migration of group-III adatoms. Although this effect is generally observed in the experiments, the different growth profiles obtained for [110]- and [110]-oriented samples reflect the different roles of A-type and B-type steps in the incorporation of group-III adatoms. We also demonstrate that during the heteroepitaxial growth of InAs, the dissociation of the GaAs substrate is locally enhanced by the incidence of the In beam. This effect can be exploited for shadow-mask-assisted etching on selected areas. In addition, we show how the positions and sizes of III-V nanostructures can be controlled with high precision on a planar substrate by the usage of shadow masks with multiple nanoscale apertures.

  17. Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics

    NASA Astrophysics Data System (ADS)

    Thathachary, Arun V.

    With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in transistor operating voltage to 0.5V or lower is urgently sought. This however implies a fundamental paradigm shift away from mature Silicon technology. III-V compound semiconductors hold great promise in this regard due to their vastly superior electron transport properties making them prime candidates to replace Silicon in the n-channel transistor. Among the plethora of binary and ternary compounds available in the III-V space, InxGa1-xAs alloys have attracted significant interest due to their excellent electron mobility, ideally placed bandgap and mature growth technology. Simultaneously, electrostatic control mandates multigate transistor designs such as the FinFET at extremely scaled nodes. This dissertation describes the experimental realization of III-V FinFETs incorporating InXGa1-XAs heterostructure channels for high performance, low power logic applications. The chapters that follow present experimental demonstrations, simulations and analysis on the following aspects (a) motivation and key figures of merit driving material selection and design; (b) dielectric integration schemes for high-k metal-gate stack (HKMG) realization on InXGa 1-XAs, including surface clean and passivation techniques developed for high quality interfaces; (c) novel techniques for transport (mobility) characterization in nanoscale multi-gate FET architectures with experimental demonstration on In0.7Ga0.3As nanowires; (d) Indium composition and quantum confined channel design for InXGa 1-XAs FinFETs and (e) InAs heterostructure designs for high performance FinFETs. Each chapter also contains detailed benchmarking of results against state of the art demonstrations in Silicon and III-V material systems. The dissertation concludes by assessing the feasibility of InXGa 1-XAs Fin

  18. III-V/Silicon Lattice-Matched Tandem Solar Cells

    SciTech Connect

    Geisz, J.; Olson, J.; Friedman, D.; Kurtz, S.; McMahon, W.; Romero, M.; Reedy, R.; Jones, K.; Norman, A.; Duda, A.; Kibbler, A.; Kramer, C.; Young, M.

    2005-01-01

    A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. To accomplish this, we have developed techniques for the growth of high crystalline quality lattice-matched GaNPAs on silicon by metal-organic vapor-phase epitaxy.

  19. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  20. New III-V cell design approaches for very high efficiency

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. )

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  1. Lattice-Mismatched III-V Epilayers for High-Efficiency Photovoltaics

    SciTech Connect

    Ahrenkiel, Scott Phillip

    2013-06-30

    The project focused on development of new approaches and materials combinations to expand and improve the quality and versatility of lattice-mismatched (LMM) III-V semiconductor epilayers for use in high-efficiency multijunction photovoltaic (PV) devices. To address these goals, new capabilities for materials synthesis and characterization were established at SDSM&T that have applications in modern opto- and nano-electronics, including epitaxial crystal growth and transmission electron microscopy. Advances were made in analyzing and controlling the strain profiles and quality of compositional grades used for these technologies. In particular, quaternary compositional grades were demonstrated, and a quantitative method for characteristic X-ray analysis was developed. The project allowed enhanced collaboration between scientists at NREL and SDSM&T to address closely related research goals, including materials exchange and characterization.

  2. Long-wave infrared (LWIR) detectors based on III-V materials

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1991-01-01

    Future NASA missions for earth observation and planetary science require large photovoltaic detector arrays with high performance in the long wavelength region to 18 microns and at operating temperatures above 65 K where single-cycle long-life cryocoolers are being developed. Since these detector array requirements exceed the state of current HgCdTe technology, alternative detector materials are being investigated as a possible option for future missions. Advanced growth techniques (e.g., MBE and MOCVD) of column III-V semiconductors have opened opportunities for engineering new detector materials and device structures. The technical approaches under investigation at JPL (with university and industry participation) include: quantum well infrared photodetectors, heterojunction internal photoemission (HIP) photodetectors, type-II strained layer superlattices, and nipi doping superlattices. Each of these options are briefly described with some of their pros and cons. A more detailed description is given for the HIP approach being pioneered at JPL.

  3. New III-V cell design approaches for very high efficiency

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O'Bradovich, G.J.; Young, M.P. )

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  4. III-V Infrared Research at the Jet Propulsion Laboratory

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Soibel, A.; Liu, John; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Nguyen, J.; Bandara, S. V.; Tidrow, M. Z.

    2009-01-01

    Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.

  5. Recombination imaging of III-V solar cells

    NASA Technical Reports Server (NTRS)

    Virshup, G. F.

    1987-01-01

    An imaging technique based on the radiative recombination of minority carriers in forward-biased solar cells has been developed for characterization of III-V solar cells. When used in mapping whole wafers, it has helped identify three independent loss mechanisms (broken grid lines, shorting defects, and direct-to-indirect bandgap transitions), all of which resulted in lower efficiencies. The imaging has also led to improvements in processing techniques to reduce the occurrence of broken gridlines as well as surface defects. The ability to visualize current mechanisms in solar cells is an intuitive tool which is powerful in its simplicity.

  6. Lattice dynamics study of bismuth III V compounds

    NASA Astrophysics Data System (ADS)

    Belabbes, A.; Zaoui, A.; Ferhat, M.

    2008-10-01

    We present first-principles calculations of the structural and lattice-dynamical properties for cubic bismuth III-V compounds: BBi, AlBi and GaBi. The ground-state properties, i.e., the lattice constant and the bulk modulus, are calculated using a plane wave pseudopotential method within density functional theory. A linear-response approach to density functional theory is used to derive the phonon frequencies. The effect of pressure on the dynamical charges and the longitudinal optical-transverse optical splitting is also examined.

  7. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  8. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  9. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  10. Prospects of III-V Tunnel FETs for Logic Applications

    NASA Astrophysics Data System (ADS)

    Datta, Suman

    2015-03-01

    In order to continue and maintain the pace of energy efficient transistor scaling, it is imperative to scale the supply voltage of operation concurrently. In this invited paper, we discuss a promising III-V device architecture such as III-V Heterojunction Tunnel FETs that may break the seemingly inflexible energy vs. performance limit of silicon CMOS transistors and provide high performance, low leakage and low operating voltage for future logic transistor technology. Unlike conventional MOSFETs, the Tunnel FET (TFET) architecture employs a gate modulated Zener tunnel junction at the source which controls the transistor ON and OFF states. This scheme fundamentally eliminates the high-energy tail present in the Fermi-Dirac distribution of the valence band electrons in the p + source region and allows sub-kT/q steep slope device operation near the OFF state. This allows Tunnel FETs to achieve a much higher ION -IOFF ratio over a small gate voltage swing. A major challenge in the demonstration of high performance Tunnel FET is the limited rate of tunneling across the Zener junction which results in low drive current. Our results show, for the first time, that the on-current bottleneck in Tunnel FETs can be overcome by careful bandgap engineering. This work is supported by Intel, NRI/SRC and NSF through ASSIST NERC.

  11. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2010-01-08

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  12. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    SciTech Connect

    Palmstrom, Chris

    2009-07-01

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  13. Toward a III-V Multijunction Space Cell Technology on Si

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

    2007-01-01

    High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red

  14. III-V GaAs based plasmonic lasers (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Lafone, Lucas; Nguyen, Ngoc; Clarke, Ed; Fry, Paul; Oulton, Rupert F.

    2015-09-01

    Plasmonics is a potential route to new and improved optical devices. Many predict that sub wavelength optical systems will be essential in the development of future integrated circuits, offering the only viable way of simultaneously increasing speed and reducing power consumption. Realising this potential will be contingent on the ability to exploit plasmonic effects within the framework of the established semiconductor industry and to this end we present III-V (GaAs) based surface plasmon laser platform capable of effective laser light generation in highly focussed regions of space. Our design utilises a suspended slab of GaAs with a metallic slot printed on top. Here, hybridisation between the plasmonic mode of the slot and the photonic mode of the slab leads to the formation of a mode with confinement and loss that can be adjusted through variation of the slot width alone. As in previous designs the use of a hybrid mode provides strong confinement with relatively low losses, however the ability to print the metal slot removes the randomness associated with device fabrication and the requirement for etching that can deteriorate the semiconductor's properties. The deterministic fabrication process and the use of bulk GaAs for gain make the device prime for practical implementation.

  15. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    NASA Astrophysics Data System (ADS)

    Luo, Xianshu; Cao, Yulian; Song, Junfeng; Hu, Xiaonan; Cheng, Yungbing; Li, Chengming; Liu, Chongyang; Liow, Tsung-Yang; Yu, Mingbin; Wang, Hong; Wang, Qijie; Lo, Patrick Guo-Qiang

    2015-04-01

    Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateral-coupled distributed feedback (LC-DFB) laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC).

  16. Effect of III-V on insulator structure on quantum well intermixing

    NASA Astrophysics Data System (ADS)

    Takashima, Seiya; Ikku, Yuki; Takenaka, Mitsuru; Takagi, Shinichi

    2016-04-01

    To achieve the monolithic active/passive integration on the III-V CMOS photonics platform, quantum well intermixing (QWI) on III-V on insulator (III-V-OI) is studied for fabricating multi-bandgap III-V-OI wafers. By optimizing the QWI condition for a 250-nm-thick III-V layer, which contains a five-layer InGaAsP-based multi-quantum well (MQW) with 80-nm-thick indium phosphide (InP) cladding layers, we have successfully achieved a photoluminescence (PL) peak shift of over 100 nm on the III-V-OI wafer. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and handle wafers. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and bulk support wafers on which the III-V-OI structure is formed (handle wafers). By comparing between the measured PL shift and simulated diffusions of phosphorus vacancies and interstitials during QWI, we have found that the slow QWI progress in the III-V-OI wafer is probably attributed to the enhanced recombination of vacancies and interstitials by the diffusion blocking of vacancies and interstitials at the BOX interface.

  17. III-V Compound Detectors for CO2 DIAL Measurements

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Ismail, Syed; Singh, Upendra N.

    2005-01-01

    Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

  18. Liquid phase epitaxy of binary III-V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Wutzler, Rene; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang

    2015-05-01

    The integration of III-V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III-V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO2/Si/SiO2 layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III-V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

  19. Nonmagnetic impellers improve evaporative cooling

    SciTech Connect

    Hausman, T. )

    1993-03-01

    This article describes how nonmagnetic impeller flow sensors help improve efficiency of open evaporative cooling water systems. Open evaporative cooling water systems provide economical heat sinks with efficient reuse of water. However, their water loss through evaporation, though minimal, results in an increased concentration of dissolved and suspended impurities in the remaining water. To deconcentrate the water and minimize impurities, the system water is bled off and replaced with fresh makeup water. Bleedoff helps, but to maintain efficient operation and protect the system from water-related catastrophes, various chemical treatments are required for the control of corrosion, deposition, and biological growth. Efficient addition of makeup water and chemical additives can be achieved by a system design employing multiple data points, using flow sensors having high reproducibility for good trend data. In such a system, nonmagnetic flow sensors provide 1% accuracy and excellent reproducibility. In addition, their low initial cost and long service life mean that they can be used cost effectively at multiple data collection points to eliminate approximations.

  20. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  1. Antimony-Based III-V Thermophotovoltaic Materials and Devices

    NASA Astrophysics Data System (ADS)

    Wang, C. A.

    2004-11-01

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature of around 1100 to 1700 K, since these cells can be spectrally matched to the thermal source. Cells under development include GaSb and lattice-matched GaInAsSb/GaSb and InPAsSb/InAs. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to the quaternary alloys. Cell performance of 0.7-eV GaSb devices is at ˜90% of the practical limit. GaInAsSb cells with energy gap Eg ranging from ˜0.6 to 0.49 eV have been demonstrated with quantum efficiency and fill factor approaching practical limits. InPAsSb cells are the least studied, and a 0.45-eV cell has spectral response out to 4.3 μm. This paper briefly reviews the main efforts in Sb-based TPV cells.

  2. In situ characterisation of epiready III V substrates for MOVPE

    NASA Astrophysics Data System (ADS)

    Allwood, D. A.; Grant, I. R.; Mason, N. J.; Palmer, R. A.; Walker, P. J.

    2000-12-01

    The use of the term epiready in relation to III-V substrates in MOVPE is ill defined and poorly understood. In this paper we attempt to clarify some of the issues associated with the term epiready, in particular, the thickness and distribution of native oxide on the surface of a GaAs wafer. The surface quality of a wafer is established at three stages, fresh from the packet, oxide removed, and after growth. The surface is assessed by means of atomic force microscopy on a microscopic level and laser light scattering and oxide thickness mapping on a macroscopic scale. GaAs substrates from long-term storage are also examined. It is shown that even long-term stored wafers (in excess of six years) with quite thick native oxide layers can be successfully deoxidised to give atomically flat terraces and can subsequently be used for successful homoepitaxial growth provided that atomic hydrogen (in this case, from the arsenic precursor) is used in the deoxidation stage. No difference between various manufacturers substrates has been found in respect to storage and subsequent use, nor has any difference been established between doped and undoped wafers.

  3. Electrical characterization of surface passivation in III-V nanowires

    NASA Astrophysics Data System (ADS)

    Holloway, Gregory; Lapierre, Ray; Baugh, Jonathan

    III-V nanowires are promising for implementing many useful technologies including optical sensing and quantum information processing. However, most native nanowires have a significant density of surface states, which cause electron accumulation at the surface and make the optoelectronic characteristics very sensitive to surface conditions and variable from device to device. To achieve optimum device performance it is imperative to decrease the density of these defects, since they are responsible for charge noise (e.g. random telegraph noise) and decreased carrier mobility. Here we report on experimental results from low temperature transport studies of a series of InAs nanowire field effect transistors, each fabricated with a different surface passivation technique. The different surface treatments include combinations of chemical passivation, growth of a thermal oxide, and deposition of a high-k dielectric to determine the optimum process for passivating the surface states. To better quantify the density of surface states, we also study the axial field magnetoconductance of short-channel nanowire transistors, and show how the results can be used to estimate the degree of surface band-bending.

  4. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Sardela, Mauro; Zuo, Jianmin; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting; Braun, Paul V.

    2015-12-01

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  5. III-V Multi-junction solar cells and concentrating photovoltaic (CPV) systems

    NASA Astrophysics Data System (ADS)

    Philipps, Simon P.; Bett, Andreas W.

    2014-12-01

    It has been proven that the only realistic path to practical ultra-high efficiency solar cells is the monolithic multi-junction approach, i.e., to stack pn-junctions made of different semiconductor materials on top of each other. Each sub pn-junction, i.e., sub solar cell, converts a specific part of the sun's spectrum. In this way, the energy of the sunlight photons is converted with low thermalization losses. However, large-area multi-junction solar cells are still far too expensive if applied in standard PV modules. A viable solution to solve the cost issue is to use tiny solar cells in combination with optical concentrating technology, in particular, high concentrating photovoltaics (HCPV), in which the light is concentrated over the solar cells more than 500 times. The combination of ultra-high efficient solar cells and optical concentration lead to low cost on system level and eventually to low levelized cost of electricity, today, well below 8 €cent/kWh and, in the near future, below 5 €cent/kWh. A wide variety of approaches exists for III-V multi-junction solar cells and HCPV systems. This article is intended to provide an overview about the different routes being followed.

  6. Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Höhn, O.; Micha, D. N.; Wagner, L.; Helmers, H.; Bett, A. W.; Dimroth, F.

    2015-03-01

    Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 μs and 100 ns respectively in a 2 μm thin active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's non-radiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of concentration.

  7. Raising the Efficiency Ceiling with Multijunction III-V Concentrator Photovoltaics

    SciTech Connect

    King, R. R.; Boca, A.; Edmondson, K. M.; Romero, M. J.; Yoon, H.; Law, D. C.; Fetzer, C. M.; Haddad, M.; Zakaria, A.; Hong, W.; Mesropian, S.; Krut, D. D.; Kinsey, G. S.; Pien, R.; Sherif, R. A.; Karam, N. H.

    2008-01-01

    In this paper, we look at the question 'how high can solar cell efficiency go?' from both theoretical and experimental perspectives. First-principle efficiency limits are analyzed for some of the main candidates for high-efficiency multijunction terrestrial concentrator cells. Many of these cell designs use lattice-mismatched, or metamorphic semiconductor materials in order to tune subcell band gaps to the solar spectrum. Minority-carrier recombination at dislocations is characterized in GaInAs inverted metamorphic solar cells, with band gap ranging from 1.4 to 0.84 eV, by light I-V, electron-beam-induced current (EBIC), and cathodoluminescence (CL). Metamorphic solar cells with a 3-junction GaInP/ GaInAs/ Ge structure were the first cells to reach over 40% efficiency, with an independently confirmed efficiency of 40.7% (AM1.5D, low-AOD, 240 suns, 25 C). The high efficiency of present III-V multijunction cells now in high-volume production, and still higher efficiencies of next-generation cells, is strongly leveraging for low-cost terrestrial concentrator PV systems.

  8. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  9. Ion implantation and rapid thermal processing of III-V nitrides

    SciTech Connect

    Zolper, J.C.; Crawford, M.H.; Pearton, S.J.; Abernathy, C.R.; Vartuli, C.B.; Yuan, C.; Stall, R.A.

    1996-05-01

    Ion implantation doping and isolation coupled with rapid thermal annealing has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. In this article, we review the recent developments in implant doping and isolation along with rapid thermal annealing of GaN and the In-containing ternary alloys InGaN and InAlN. In particular, the successful n- and p-type doping of GaN by ion implantation of Si and Mg+P, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000{degree}C is reviewed. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N-, and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N- or F-implantation. The effects of rapid thermal annealing on unimplanted material are also presented. 29 refs., 6 figs., 2 tabs.

  10. Status of ion implantation doping and isolation of III-V nitrides

    SciTech Connect

    Zolper, J.C.; Pearton, S.J.; Abernathy, C.R.

    1995-09-01

    Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P and Si, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000{degrees}C. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N or F implantation.

  11. Ion implantation for high performance III-V JFETS and HFETS

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-06-01

    Ion implantation has been an enabling technology for realizing many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing for GaAs JFETs (joint field effect transistors), AlGaAs/GaAs HFETs (heterostructure field effect transistors), and InGaP or InAlP-barrier HFETs. The GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs are reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to absence of the deep donor level. An optimized P co- implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

  12. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    NASA Astrophysics Data System (ADS)

    Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

    2015-10-01

    Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

  13. Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers

    NASA Technical Reports Server (NTRS)

    Welser, R. E.; Guido, L. J.

    1994-01-01

    We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.

  14. Amino-arsine and -phosphine compounds for the MOVPE of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Zimmermann, G.; Protzmann, H.; Marschner, T.; Zsebök, O.; Stolz, W.; Göbel, E. O.; Gimmnich, P.; Lorberth, J.; Filz, T.; Kurpas, P.; Richter, W.

    1993-03-01

    The alternative group V sources trisdimethylamino-arsine (TDMAAs) and trisdimethylamino-phosphine (TDMAP) have been used as substitutes for the highly toxic group V hydrides AsH3 and PH3 for the growth of GaAs, (AlGa)As and InP epitaxial layers by low-pressure metalorganic vapour phase epitaxy (MOVPE). The properties of the layers have been investigated by means of structural (X-ray diffraction), electrical (Hall) and optical (luminescence) methods. The epitaxial layer quality as a function of growth parameters is presented and discussed. GaAs and InP epitaxial layers exhibit narrow X-ray diffraction linewidths (10″ FWHM). Residual n-type carrier concentrations down to 3 × 1015and5 × 1015 cm-3 for GaAs and InP, respectively, with mobilities up to 4300 and 18000 cm2/V·s at 77 K are observed. The main acceptor impurity in GaAs and InP layers is carbon, as can be concluded from luminescence measurements. For Al-containing layers, a clear deterioration of the layer quality is observed, caused by the incorporation of nitrogen into the layers, as established by SIMS and X-ray diffraction analysis.

  15. Investigation of proton damage in III-V semiconductors by optical spectroscopy

    NASA Astrophysics Data System (ADS)

    Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, A.; Hoffmann, A.; Giudici, P.

    2016-06-01

    We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

  16. Stable vapor transportation of solid sources in MOVPE of III V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Marsman, Charles J.; Polcari, Robert F.; Ware, Robert A.; Woelk, Egbert

    2007-01-01

    Trimethylindium (TMI), in spite of being a solid, has remained the precursor of choice for the deposition of indium containing layers by MOVPE. However, maintaining stable TMI flows and constant concentrations in gas phase during the growth still continue to be a major concern in MOVPE. This issue is further compounded by lower TMI consumptions achieved as the MOVPE growth conditions become increasingly more aggressive to meet the industry demand of higher throughputs, e.g. at higher flow rates, or at reduced pressures or when TMI source is maintained at higher temperatures. In this paper, we report our new findings of improved TMI delivery (>90, and in some cases >95%) with excellent stability of TMI concentration throughout the cylinder lifetime. These results are achieved using standard fill capacity and under intentionally set aggressive conditions of pressure, temperature and flow. We report a novel delivery technology (Uni-Flo™ II cylinder) that is customer proven and comprises innovative improvements to our dip-tube-less cylinder design, Uni-Flo™ cylinder, and advancements in TMI packaging. In this report, TMI depletion rates are examined over an extensive range of operating parameters currently employed in MOVPE, viz. flow rates ranging from 100 to 1000 sccm, source temperatures between 17 and 30 °C, and reactor pressures in the range 300-1000 mbar. We report, significant improvements in TMI delivery (>95% depletion) at higher molar flux of TMI (>3 g/h) and an excellent reproducible dosimetry of TMI with no batch-to-batch variation, by using Uni-Flo™ II cylinder as the enabling solution to TMI delivery problems.

  17. Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

    NASA Astrophysics Data System (ADS)

    Westland, Duncan James

    Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

  18. Virtual crystal description of III-V semiconductor alloys in the tight binding approach.

    PubMed

    Nestoklon, M O; Benchamekh, R; Voisin, P

    2016-08-01

    We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the Hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based quantum wells and quantum wires without extensive supercell calculations. PMID:27270264

  19. Evolution of the electron acoustic signal as function of doping level in III-V semiconductors

    SciTech Connect

    Bresse, J.F.; Papadopoulo, A.C.

    1988-07-01

    The evolution of the electron acoustic signal has been measured for Be- and Si-doped GaAs and Ga/sub 0.28/Al/sub 0.19/In/sub 0.53/As layers with doping levels from10/sup 17/ to 10/sup 20/ at. cm/sup -3/. The samples have also been analyzed by cathodoluminescence spectroscopy for near-band-edge transition and deep level emission. The results are explained by the reduction of the mean free path of phonons, giving rise to a lattice thermal conductivity decrease. Meanwhile, the electronic part of the thermal conductivity of these compounds is found to be nearly negligible.

  20. Characterization of III-V materials by optical interferometry

    NASA Astrophysics Data System (ADS)

    Montgomery, P. C.; Vabre, P.; Montaner, D.; Fillard, J. P.

    1993-09-01

    Digital interference microscopy is a new measuring technique with submicron horizontal resolution and nanometric vertical resolution, that can be used for the three-dimensional analysis of surface defects and device features in many microelectronics applications on bulk materials and epitaxial layers. In this paper we show how certain defects can be analysed on III-V materials and devices using two different interferometric techniques. The choice of the technique depends on the height and the slope of the surface features to be measured. We show that small defects less than λ/2 in height, or surfaces with shallow continuous slopes upto one or two microns high are best profiled with the phase stepping technique (PSM) because of the high vertical resolution of 1 nm and the higher speed and precision. This is illustrated by studies of the surface polish of InP wafers, defects after chemical etching of tin doped InP, defects on an epitaxial layer of GaAs on InP and quantum dot structures on GaAs. For measuring devices which contain mesas and grooves with step heights greater than λ/2, the peak fringe scanning (PFSM) method is the better choice. The vertical resolution is slightly less (4 nm), but the vertical range is higher (upto 15 μm) as demonstrated with the measurement of an etched groove in a laser/detector device on a quaternary layer on InP, and a MESFET device on GaAs. Compared with electron microscopy and the new near field scanning techniques, digital interference microscopy has the advantages of ease of use and speed of analysis and being able to resolve certain problems that are difficult or not possible by other means, such as profiling deep narrow etched grooves, or measuring the relief of a surface hidden under a transparent layer. The main disadvantages are that the horizontal resolution is limited to the resolving power of the objective and that errors due to variations in the optical properties of the sample need to be taken into account. La

  1. III-V-on-silicon anti-colliding pulse-type mode-locked laser.

    PubMed

    Keyvaninia, S; Uvin, S; Tassaert, M; Wang, Z; Fu, X; Latkowski, S; Marien, J; Thomassen, L; Lelarge, F; Duan, G; Lepage, G; Verheyen, P; Van Campenhout, J; Bente, E; Roelkens, G

    2015-07-01

    An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated. The generated fundamental RF tone shows a 1.7 kHz 3 dB linewidth. Over 9 mW waveguide coupled output power is demonstrated. PMID:26125366

  2. Effects of Humidity on Non-Hermetically Packaged III-V Structures and Devices

    NASA Technical Reports Server (NTRS)

    Leon, R.; Martin, S.; Lee, T.; Okuno, J.; Ruiz, R.; Gauldin, R.; Gaidis, M.; Smith, R.

    1999-01-01

    High humidity and temperature test (known as 85/85 tests) were performed on various III-V devices and structures to determine environmental effects in non-hermetically packaged GaAs membrane mixer diodes.

  3. Semiconducting III-V nanowires with nanogaps for molecular junctions: DFT transport simulations.

    PubMed

    Kallesøe, Christian; Fürst, Joachim A; Mølhave, Kristian; Bøggild, Peter; Brandbyge, Mads

    2009-11-18

    We consider here the possibility of using III-V heterostructure nanowires as electrodes for molecular electronics instead of metal point contacts. Using ab initio electronic structure and transport calculations, we study the effect on electronic properties of placing a small molecule with thiol linking groups, benzene-di-thiol (BDT), within a nanosize gap in a III-V nanowire. Furthermore, it is investigated how surface states affect the transport through pristine III-V nanowires and through the BDT molecule situated within the nanogap. Using GaAs and GaP as III-V materials we find that the BDT molecule provides transport through the entire system comparable to the case of gold electrodes. PMID:19843997

  4. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    NASA Astrophysics Data System (ADS)

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-05-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

  5. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms. PMID:25639492

  6. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

    PubMed

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  7. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    PubMed Central

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca i Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  8. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    NASA Astrophysics Data System (ADS)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  9. BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys

    SciTech Connect

    Hart, G. L. W.; Zunger, A.

    2000-01-01

    Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

  10. The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots.

    PubMed

    Franke, Daniel; Harris, Daniel K; Xie, Lisi; Jensen, Klavs F; Bawendi, Moungi G

    2015-11-23

    Control of quantum dot (QD) precursor chemistry has been expected to help improve the size control and uniformity of III-V QDs such as indium phosphide and indium arsenide. Indeed, experimental results for other QD systems are consistent with the theoretical prediction that the rate of precursor conversion is an important factor controlling QD size and size distribution. We synthesized and characterized the reactivity of a variety of group-V precursors in order to determine if precursor chemistry could be used to improve the quality of III-V QDs. Despite slowing down precursor conversion rate by multiple orders of magnitude, the less reactive precursors do not yield the expected increase in size and improvement in size distribution. This result disproves the widely accepted explanation for the shortcoming of current III-V QD syntheses and points to the need for a new generalizable theoretical picture for the mechanism of QD formation and growth. PMID:26437711

  11. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    SciTech Connect

    Tamboli, Adele C. Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul; Perl, Emmett E.

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  12. Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

    SciTech Connect

    Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.; Woodhouse, Michael; van Hest, Maikel F. A. M.; Norman, Andrew G.; Steiner, Myles A.; Stradins, Paul

    2015-06-14

    Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.

  13. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    NASA Astrophysics Data System (ADS)

    Tamboli, Adele C.; van Hest, Maikel F. A. M.; Steiner, Myles A.; Essig, Stephanie; Perl, Emmett E.; Norman, Andrew G.; Bosco, Nick; Stradins, Paul

    2015-06-01

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  14. Transferable tight-binding model for strained group IV and III-V materials and heterostructures

    NASA Astrophysics Data System (ADS)

    Tan, Yaohua; Povolotskyi, Michael; Kubis, Tillmann; Boykin, Timothy B.; Klimeck, Gerhard

    2016-07-01

    It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable s p3d5s* tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized with respect to hybrid functional (HSE06) calculations for varieties of strained systems. The tight-binding calculations of ultrasmall superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of the tight-binding model to superlattices demonstrates that the transferable tight-binding model with nearest-neighbor interactions can be obtained for group IV and III-V materials.

  15. III-V/silicon germanium tandem solar cells on silicon substrates

    NASA Astrophysics Data System (ADS)

    Schmieder, Kenneth J.

    The development of a cost-effective high voltage tandem solar cell that can be grown directly on a silicon (Si) platform can lead to a 34% increase in efficiency over the present best monocrystalline Si laboratory device. III-V devices are known to yield some of the highest efficiencies in photovoltaics, but the high cost of lattice matched substrates and metal organic chemical vapor deposition (MOCVD) and device development make them prohibitively expensive in many markets. By utilizing silicon substrates and limiting the thickness of the III-V MOCVD material growth, this cost can be reduced. The leveraging technology of this initiative is a metamorphic silicon:germanium (SiGe) buffer between the silicon substrate and the active device layers. As developed by AmberWave Inc., it provides a low-dislocation interface for III-V nucleation and a high quality bottom cell grown by reduced pressure chemical vapor deposition (RPCVD). This research first reports on the theoretical limits of a III-V/SiGe tandem solar cell. Results will evaluate multiple III-V materials for the determination of optimal material composition to be lattice-matched with SiGe. Following this, a more complex device simulation, incorporating all major loss mechanisms, is accomplished in order to predict ideal efficiency targets and evaluate present experimental structures. Results demonstrate a robust model capable of simulating a wide range of binary and ternary III-V devices. Predictions show the capability of a tandem device operating at 32.5% 1-sun efficiency without requiring TDD improvement beyond that of the present SiGe layers. Following simulations, experimental III-V structures are grown via MOCVD and characterized, indicating successful process development for growth of III-V materials on the SiGe platform. This growth is then validated via the design and development of experimental solar device structures. Each iteration, beginning with the single-junction windowless GaAsP solar cell and

  16. Precise measurement of charged defects in III-V compounds (2)

    NASA Technical Reports Server (NTRS)

    Soest, J. F.

    1972-01-01

    The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.

  17. High efficiency concentrator modules using single and multijunction III-V solar cells

    SciTech Connect

    Kuryla, M.S.; Fraas, L.M. ); Bigger, J.E. )

    1992-12-01

    Solar cells fabricated from various III-V compounds have recently produced very high laboratory conversion efficiencies approaching 29% for single junction and 35% for multijunction structures under concentrated illumination. However, due to their relatively limited availability, few of these devices have been incorporated into actual concentrator module structures. Details are presented from two development efforts which have incorporated III-V cells into high efficiency prototype concentrator modules: (1) Varian's GaAs module operating at 1000 suns with flat fresnel lenses; and (2) Boeing's tandem GaAs/GaSb module operating at 50 suns with Entech's domed fresnel lenses.

  18. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  19. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    NASA Astrophysics Data System (ADS)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  20. EUVE Observations of Nonmagnetic Cataclysmic Variables

    SciTech Connect

    Mauche, C W

    2001-09-05

    The authors summarize EUVE's contribution to the study of the boundary layer emission of high accretion-rate nonmagnetic cataclysmic variables, especially the dwarf novae SS Cyg, U Gem, VW Hyi, and OY Car in outburst. They discuss the optical and EUV light curves of dwarf nova outbursts, the quasi-coherent oscillations of the EUV flux of SS Cyg, the EUV spectra of dwarf novae, and the future of EUV observations of cataclysmic variables.

  1. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    NASA Astrophysics Data System (ADS)

    Carlin, Andrew M.

    Lattice-mismatched epitaxy in the III-V compound semiconductor system based on III-AsP and related alloys are of enormous importance, and considerable research interest, for many years. The reason is straightforward if one considers the limitations placed on available materials properties for devices dictated by lattice matching to the dominant substrate technologies - Si, GaAs (and/or Ge) and InP. For III-V epitaxy, the lattice constants of these substrates have defined a generation or more of device advances since growth of heterostructures possessing the same equilibrium lattice constants as the substrate yields essentially defect-free (specifically extended defect-free) materials and devices. Removing the restriction of lattice matching to current substrate technology opens a rich spectrum of bandgaps, bandgap combinations, conduction and valence band offsets, etc., that are desirable and exploitable for advancing device technologies for new functionality and greater performance. However successful exploitation of these properties requires mitigation of a variety of extended defects that result from the lattice mismatch between substrate and epitaxial heterostructures. A well known method to achieve this solution is through the use of compositionally (lattice constant-graded) buffer interlayers, in which the equilibrium lattice constants of interlayers are slowly altered by controlled changes in layer composition so that the mismatch strain between the initial substrate and the final device layers is spread across a thickness of buffer. The research accomplished has yielded success for both lattice constant ranges Si - GaAs and GaAs - InP. For the Si - GaAs system, a three step GaP nucleation process on Si has been developed and demonstrated, which maintains total avoidance of creating coalescence-related defects such as antiphase domains and stacking faults resulting from the initial III-V/IV interfaces while reducing overall threading dislocation density by

  2. Impact of photon recycling and luminescence coupling on III-V single and dual junction photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, Alexandre W.; Höhn, Oliver; Micha, Daniel N.; Wagner, Lukas; Helmers, Henning; Bett, Andreas W.; Dimroth, Frank

    2015-01-01

    Modeling single junction solar cells composed of III-V semiconductors such as GaAs with the effects of photon recycling yields insight into design and material criteria required for high efficiencies. For a thin-film single junction GaAs cell to reach 28.5% efficiency, simulation results using a recently developed model which accounts for photon recycling indicate that Shockley-Read-Hall (SRH) lifetimes of electrons and holes must be longer than 3 and 1 μs, respectively, in a 2-μm thin active region, and that the native substrate must be removed such that the cell is coupled to a highly reflective rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's nonradiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14% to 33% experimentally, whereas the model requires increasing electron and hole SRH lifetimes to explain these results. This could be an indication of the saturating defects which mediate the SRH process. However, intermediate GaAs layers between the two subcells may also contribute to the luminescence coupling as a function of concentration.

  3. Characterization of interface abruptness and material properties in catalytically grown III-V nanowires: exploiting plasmon chemical shift

    NASA Astrophysics Data System (ADS)

    Tizei, L. H. G.; Chiaramonte, T.; Cotta, M. A.; Ugarte, D.

    2010-07-01

    We have studied the assessment of chemical composition changes in III-V heterostructured semiconductor nanowires (NWs) with nanometric spatial resolution using transmission electron microscopy methods. These materials represent a challenge for conventional spectroscopy techniques due to their high sensitivity to electron beam irradiation. Radiation damage strongly limits the exposure time to a few (5-10) s, which reduces the sensitivity of the traditionally used x-ray spectroscopy. The rather low counting statistics results in significant errors bars for EDS chemical quantification (5-10%) and interface width determination (few nanometers). Plasmon chemical shift is ideal in this situation, as its measurement requires very short exposure times (~100 ms) and the plasmon peak energy can be measured with high precision (~20 meV in this work). This high sensitivity allows the detection of subtle changes (1-2%) in composition or even the detection of a small plasmon energy (33 ± 7) meV change along usually assumed pure and homogeneous InAs segments. We have applied this approach to measure interface widths in heterostructure InAs/InP NWs grown using metal catalysts and also to determine the timescale (~10 s) in which beam irradiation induces material damage in these wires. In particular, we have detected small As concentrations (4.4 ± 0.5)% in the final InP segment close to the Au catalyst, which leads to the conclusion that As diffuses through the metal nanoparticle during growth.

  4. Characterization of interface abruptness and material properties in catalytically grown III-V nanowires: exploiting plasmon chemical shift.

    PubMed

    Tizei, L H G; Chiaramonte, T; Cotta, M A; Ugarte, D

    2010-07-23

    We have studied the assessment of chemical composition changes in III-V heterostructured semiconductor nanowires (NWs) with nanometric spatial resolution using transmission electron microscopy methods. These materials represent a challenge for conventional spectroscopy techniques due to their high sensitivity to electron beam irradiation. Radiation damage strongly limits the exposure time to a few (5-10) s, which reduces the sensitivity of the traditionally used x-ray spectroscopy. The rather low counting statistics results in significant errors bars for EDS chemical quantification (5-10%) and interface width determination (few nanometers). Plasmon chemical shift is ideal in this situation, as its measurement requires very short exposure times (approximately 100 ms) and the plasmon peak energy can be measured with high precision (approximately 20 meV in this work). This high sensitivity allows the detection of subtle changes (1-2%) in composition or even the detection of a small plasmon energy (33 +/- 7) meV change along usually assumed pure and homogeneous InAs segments. We have applied this approach to measure interface widths in heterostructure InAs/InP NWs grown using metal catalysts and also to determine the timescale (approximately 10 s) in which beam irradiation induces material damage in these wires. In particular, we have detected small As concentrations (4.4 +/- 0.5)% in the final InP segment close to the Au catalyst, which leads to the conclusion that As diffuses through the metal nanoparticle during growth. PMID:20585172

  5. Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling

    NASA Astrophysics Data System (ADS)

    Koba, Shunsuke; Ohmori, Masaki; Maegawa, Yōsuke; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Ogawa, Matsuto

    2014-04-01

    The difference in the impact of source-drain (SD) direct tunneling in In0.53Ga0.47As and InP metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated by a quantum Wigner Monte Carlo simulation. It was found that the subthreshold current increase due to SD direct tunneling is more marked in In0.53Ga0.47As MOSFETs owing to their lower effective mass. In addition, the critical channel length at which a drastic increase in subthreshold current occurs owing to SD direct tunneling was found to be about 20 nm for both In0.53Ga0.47As and InP MOSFETs. Since this value is significantly larger than that for Si MOSFETs, SD direct tunneling can be a major obstacle in downscaling III-V MOSFETs into Lch < 20 nm. Hence, to go beyond the end of the roadmap, we will need a selection of materials to suppress SD direct tunneling.

  6. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    PubMed

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure. PMID:26726356

  7. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  8. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  9. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

    PubMed

    Kazior, Thomas E

    2014-03-28

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

  10. Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Fischetti, M. V.; Sorée, B.; O'Regan, T.

    2010-12-01

    We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In1-xGaxAs) p-channel inversion layers with both SiO2 and high-κ insulators. The valence (sub)band structure of Ge and III-V channels, relaxed and under biaxial strain (tensile and compressive) is calculated using an efficient self-consistent method based on the six-band k ṡp perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multisubband dielectric screening. As expected, we find that Ge and III-V semiconductors exhibit a mobility significantly larger than the "universal" Si mobility. This is true for MOS systems with either SiO2 or high-κ insulators, although the latter ones are found to degrade the hole mobility compared to SiO2 due to scattering with interfacial optical phonons. In addition, III-Vs are more sensitive to the interfacial optical phonons than Ge due to the existence of the substrate polar phonons. Strain—especially biaxial tensile stress for Ge and biaxial compressive stress for III-Vs (except for GaAs)—is found to have a significant beneficial effect with both SiO2 and HfO2. Among strained p-channels, InSb exhibits the largest mobility enhancement. In0.7Ga0.3As also exhibits an increased hole mobility compared to Si, although the enhancement is not as large. Finally, our theoretical results are favorably compared with available experimental data for a relaxed Ge p-channel with a HfO2 insulator.