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Sample records for oversampled optoelectronic analog-digital

  1. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  2. Gabor representation with oversampling

    NASA Astrophysics Data System (ADS)

    Zibulski, Meir; Zeevi, Yehoshua Y.

    1992-11-01

    An approach for characterizing the properties of the basis functions of the Gabor representation in the context of oversampling is presented. The approach is based on the concept of frames and utilizes the Piecewise Zak Transform (PZT). The frame operator associated with the Gabor-type frame, the so-called Weyl-Heisenberg frame, is examined for a rational oversampling rate by representing the frame operator as a matrix-valued function in the PZT domain. Completeness and frame properties of the Gabor representation functions are examined in relation to the properties of the matrix-valued function. The frame bounds are calculated by means of the eigenvalues of the matrix-valued function, and the dual-frame, which is used in calculation of the expansion coefficients, is expressed by means of the inverse matrix.

  3. On automatic synthesis of analog/digital circuits

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper builds on a recent explicit numerical algorithm for Kolmogorov`s superpositions, and will show that in order to synthesize minimum size (i.e., size-optimal) circuits for implementing any Boolean function, the nonlinear activation function of the gates has to be the identity function. Because classical and--or implementations, as well as threshold gate implementations require exponential size, it follows that size-optimal solutions for implementing arbitrary Boolean functions can be obtained using analog (or mixed analog/digital) circuits. Conclusions and several comments are ending the paper.

  4. Configurable analog-digital conversion using the neural engineering framework

    PubMed Central

    Mayr, Christian G.; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic. PMID:25100933

  5. Configurable analog-digital conversion using the neural engineering framework.

    PubMed

    Mayr, Christian G; Partzsch, Johannes; Noack, Marko; Schüffny, Rene

    2014-01-01

    Efficient Analog-Digital Converters (ADC) are one of the mainstays of mixed-signal integrated circuit design. Besides the conventional ADCs used in mainstream ICs, there have been various attempts in the past to utilize neuromorphic networks to accomplish an efficient crossing between analog and digital domains, i.e., to build neurally inspired ADCs. Generally, these have suffered from the same problems as conventional ADCs, that is they require high-precision, handcrafted analog circuits and are thus not technology portable. In this paper, we present an ADC based on the Neural Engineering Framework (NEF). It carries out a large fraction of the overall ADC process in the digital domain, i.e., it is easily portable across technologies. The analog-digital conversion takes full advantage of the high degree of parallelism inherent in neuromorphic networks, making for a very scalable ADC. In addition, it has a number of features not commonly found in conventional ADCs, such as a runtime reconfigurability of the ADC sampling rate, resolution and transfer characteristic. PMID:25100933

  6. A neurocomputer based on an analog-digital hybrid architecture

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Thakoor, A. P.; Duong, T.; Khanna, S. K.

    1987-01-01

    A novel analog-digital hybrid architecture based on the utilization of high density digital random access memories for the storage of the synaptic weights of a neural network, and high speed analog hardware to perform neural computation is described. An electronic neurocomputer based on such an architecture is ideally suited for investigating the dynamics, associative recall properties, and computational capabilities of neural networks and provides significant speed improvement in comparison to conventional software based neural network simulations. As a demonstration of the feasibility of the hybrid architectural concept, a prototype breadboard hybrid neurocomputer system with 32 neurons has been designed and fabricated with off-the-shelf hardware components. The performance of the breadboard system has been tested for variety of applications including associative memory and combinatorial problem solving such as Graph Coloring, and is discussed in this paper.

  7. Software Applications for Oversampling of Transit Candidates

    NASA Astrophysics Data System (ADS)

    Quentin, C. G.; Barge, P.; Cautain, R.; Meunier, J.-C.; Moutou, C.; Savalle, R.; Surace, C.

    2006-11-01

    In the Exo-field, the standard sampling of 12000 light-curves is 8.5 minutes but a finite number of them (1000 at maximum for a given field of view) can be oversampled to 32 seconds. This possibility was planned to enhance the scientific impact of the mission with the aim to get additional information on the shape and timing of the planetary transits. The targets to be oversampled are selected from a ground-based analysis of uncompletely corrected (preliminary) N1 data and sorted in a list that can be changed during the data acquisition. At the beginning of a run the 1000 oversampling possibilities are occupied either by stars known to host a planet (from ground based observations) or by reference stars appropriately chosen within the HerstzsprungRussel (HR) diagram. We present the software used for early detection in raw light-curves and the way results are stored and sorted to build up the oversampling list that is loaded on board the satellite. This list can be changed once a week during the operations while new sets of data are acquired. The whole software and data management developed to decide which target stars merit or not oversampling will be called ”Exowarning pipeline”.

  8. Nokia PureView oversampling technology

    NASA Astrophysics Data System (ADS)

    Vuori, Tero; Alakarhu, Juha; Salmelin, Eero; Partinen, Ari

    2013-03-01

    This paper describes Nokia's PureView oversampling imaging technology as well as the product, Nokia 808 PureView, featuring it. The Nokia PureView imaging technology is the combination of a large, super high resolution 41Mpix with high performance Carl Zeiss optics. Large sensor enables a pixel oversampling technique that reduces an image taken at full resolution into a lower resolution picture, thus achieving higher definition and light sensitivity. One oversampled super pixel in image file is formed by using many sensor pixels. A large sensor enables also a lossless zoom. If a user wants to use the lossless zoom, the sensor image is cropped. However, up-scaling is not needed as in traditional digital zooming usually used in mobile devices. Lossless zooming means image quality that does not have the digital zooming artifacts as well as no optical zooming artifacts like zoom lens system distortions. Zooming with PureView is also completely silent. PureView imaging technology is the result of many years of research and development and the tangible fruits of this work are exceptional image quality, lossless zoom, and superior low light performance.

  9. Optical hybrid analog-digital signal processing based on spike processing in neurons

    NASA Astrophysics Data System (ADS)

    Fok, Mable P.; Tian, Yue; Rosenbluth, David; Deng, Yanhua; Prucnal, Paul R.

    2011-09-01

    Spike processing is one kind of hybrid analog-digital signal processing, which has the efficiency of analog processing and the robustness to noise of digital processing. When instantiated with optics, a hybrid analog-digital processing primitive has the potential to be scalable, computationally powerful, and have high operation bandwidth. These devices open up a range of processing applications for which electronic processing is too slow. Our approach is based on a hybrid analog/digital computational primitive that elegantly implements the functionality of an integrate-and-fire neuron using a Ge-doped non-linear optical fiber and off-the-shelf semiconductor devices. In this paper, we introduce our photonic neuron architecture and demonstrate the feasibility of implementing simple photonic neuromorphic circuits, including the auditory localization algorithm of the barn owl, which is useful for LIDAR localization, and the crayfish tail-flip escape response.

  10. BacNet and Analog/Digital Interfaces of the Building Controls Virtual Testbed

    SciTech Connect

    Nouidui, Thierry Stephane; Wetter, Michael; Li, Zhengwei; Pang, Xiufeng; Bhattachayra, Prajesh; Haves, Philip

    2011-11-01

    This paper gives an overview of recent developments in the Building Controls Virtual Test Bed (BCVTB), a framework for co-simulation and hardware-in-the- loop. First, a general overview of the BCVTB is presented. Second, we describe the BACnet interface, a link which has been implemented to couple BACnet devices to the BCVTB. We present a case study where the interface was used to couple a whole building simulation program to a building control system to assess in real-time the performance of a real building. Third, we present the ADInterfaceMCC, an analog/digital interface that allows a USB-based analog/digital converter to be linked to the BCVTB. In a case study, we show how the link was used to couple the analog/digital converter to a building simulation model for local loop control.

  11. Phase retrieval from exactly oversampled diffraction intensity through deconvolution

    SciTech Connect

    Song Changyong; Ramunno-Johnson, Damien; Miao Jianwei; Nishino, Yoshinori; Kohmura, Yoshiki; Ishikawa, Tetsuya

    2007-01-01

    We have shown that, when the linear oversampling ratio {>=}2, exactly oversampled diffraction patterns can be directly obtained from measured data through deconvolution. By using computer simulations and experimental data, we have demonstrated that exact oversampling of diffraction patterns distinctively improves the quality of phase retrieval. Furthermore, phase retrieval based on the exact sampling scheme is independent of the oversampling ratio, which can significantly reduce the radiation dosage to the samples. We believe that the present work will contribute to high-quality image reconstruction of materials science samples and biological structures using x-ray diffraction microscopy.

  12. Small pixel oversampled IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Caulfield, John; Curzan, Jon; Lewis, Jay; Dhar, Nibir

    2015-06-01

    We report on a new high definition high charge capacity 2.1 Mpixel MWIR Infrared Focal Plane Array. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which is below the Nyquist limit imposed by the optical systems Point Spread Function (PSF). These smaller sub diffraction limited pixels allow spatial oversampling of the image. We show that oversampling IRFPAs enables improved fidelity in imaging including resolution improvements, advanced pixel correlation processing to reduce false alarm rates, improved detection ranges, and an improved ability to track closely spaced objects. Small pixel HD arrays are viewed as the key component enabling lower size, power and weight of the IR Sensor System. Small pixels enables a reduction in the size of the systems components from the smaller detector and ROIC array, the reduced optics focal length and overall lens size, resulting in an overall compactness in the sensor package, cooling and associated electronics. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  13. Oversampling the Minority Class in the Feature Space.

    PubMed

    Perez-Ortiz, Maria; Gutierrez, Pedro Antonio; Tino, Peter; Hervas-Martinez, Cesar

    2016-09-01

    The imbalanced nature of some real-world data is one of the current challenges for machine learning researchers. One common approach oversamples the minority class through convex combination of its patterns. We explore the general idea of synthetic oversampling in the feature space induced by a kernel function (as opposed to input space). If the kernel function matches the underlying problem, the classes will be linearly separable and synthetically generated patterns will lie on the minority class region. Since the feature space is not directly accessible, we use the empirical feature space (EFS) (a Euclidean space isomorphic to the feature space) for oversampling purposes. The proposed method is framed in the context of support vector machines, where the imbalanced data sets can pose a serious hindrance. The idea is investigated in three scenarios: 1) oversampling in the full and reduced-rank EFSs; 2) a kernel learning technique maximizing the data class separation to study the influence of the feature space structure (implicitly defined by the kernel function); and 3) a unified framework for preferential oversampling that spans some of the previous approaches in the literature. We support our investigation with extensive experiments over 50 imbalanced data sets. PMID:26316222

  14. A novel analog/digital reconfigurable automatic gain control with a novel DC offset cancellation circuit

    NASA Astrophysics Data System (ADS)

    Xiaofeng, He; Taishan, Mo; Chengyan, Ma; Tianchun, Ye

    2011-02-01

    An analog/digital reconfigurable automatic gain control (AGC) circuit with a novel DC offset cancellation circuit for a direct-conversion receiver is presented. The AGC is analog/digital reconfigurable in order to be compatible with different baseband chips. What's more, a novel DC offset cancellation (DCOC) circuit with an HPCF (high pass cutoff frequency) less than 10 kHz is proposed. The AGC is fabricated by a 0.18 μm CMOS process. Under analog control mode, the AGC achieves a 70 dB dynamic range with a 3 dB-bandwidth larger than 60 MHz. Under digital control mode, through a 5-bit digital control word, the AGC shows a 64 dB gain control range by 2 dB each step with a gain error of less than 0.3 dB. The DC offset cancellation circuits can suppress the output DC offset voltage to be less than 1.5 mV, while the offset voltage of 40 mV is introduced into the input. The overall power consumption is less than 3.5 mA, and the die area is 800 × 300 μm2.

  15. The design, fabrication, and test of a new VLSI hybrid analog-digital neural processing element

    NASA Technical Reports Server (NTRS)

    Deyong, Mark R.; Findley, Randall L.; Fields, Chris

    1992-01-01

    A hybrid analog-digital neural processing element with the time-dependent behavior of biological neurons has been developed. The hybrid processing element is designed for VLSI implementation and offers the best attributes of both analog and digital computation. Custom VLSI layout reduces the layout area of the processing element, which in turn increases the expected network density. The hybrid processing element operates at the nanosecond time scale, which enables it to produce real-time solutions to complex spatiotemporal problems found in high-speed signal processing applications. VLSI prototype chips have been designed, fabricated, and tested with encouraging results. Systems utilizing the time-dependent behavior of the hybrid processing element have been simulated and are currently in the fabrication process. Future applications are also discussed.

  16. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  17. Reentrant excitation in an analog-digital hybrid circuit model of cardiac tissue

    NASA Astrophysics Data System (ADS)

    Mahmud, Farhanahani; Shiozawa, Naruhiro; Makikawa, Masaaki; Nomura, Taishin

    2011-06-01

    We propose an analog-digital hybrid circuit model of one-dimensional cardiac tissue with hardware implementation that allows us to perform real-time simulations of spatially conducting cardiac action potentials. Each active nodal compartment of the tissue model is designed using analog circuits and a dsPIC microcontroller, by which the time-dependent and time-independent nonlinear current-voltage relationships of six types of ion channel currents employed in the Luo-Rudy phase I (LR-I) model for a single mammalian cardiac ventricular cell can be reproduced quantitatively. Here, we perform real-time simulations of reentrant excitation conduction in a ring-shaped tissue model that includes eighty nodal compartments. In particular, we show that the hybrid tissue model can exhibit real-time dynamics for initiation of reentries induced by uni-directional block, as well as those for phase resetting that leads to annihilation of the reentry in response to impulsive current stimulations at appropriate nodes and timings. The dynamics of the hybrid model are comparable to those of a spatially distributed tissue model with LR-I compartments. Thus, it is conceivable that the hybrid model might be a useful tool for large scale simulations of cardiac tissue dynamics, as an alternative to numerical simulations, leading toward further understanding of the reentrant mechanisms.

  18. A CMOS analog-digital integrated circuit for charged particle spectrum measurements

    SciTech Connect

    Paschalidis, N.P. Johns Hopkins Univ., Laurel, MD . Applied Physics); Sarris, E.T. ); Andreou, A.G. . Dept. of Electrical and Computer Engineering)

    1993-08-01

    The authors present a first prototype for a CMOS analog-digital integrated circuit suitable for energy spectra measurements of space plasmas, using solid state detectors. The single chip system includes a charge preamplifier followed by a pulse shaper, an energy discrimination block and an accumulation stage. The particle energy spectrum is measured in 10 channels through a novel non-linear flash A/D converter and is stored in equinumber 11-bit registers, which can then be selectively addressed, read out, and reset. The overall noise performance with detector capacitance of 50 pf is equivalent to [approximately] 7,000 electrons. The power dissipation is [approximately] 120 mW. The complete system can resolve particle counting rates as high as 1.5 [times] 10[sup 5] counts/sec, and as high as 10[sup 6] counts/sec in the pulse height analysis accumulation mode. The small size and low power dissipation makes such an application attractive for space experiments and portable nuclear instrumentation.

  19. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor

    PubMed Central

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields. PMID:26729118

  20. An Analog-Digital Mixed Measurement Method of Inductive Proximity Sensor.

    PubMed

    Guo, Yi-Xin; Shao, Zhi-Biao; Li, Ting

    2015-01-01

    Inductive proximity sensors (IPSs) are widely used in position detection given their unique advantages. To address the problem of temperature drift, this paper presents an analog-digital mixed measurement method based on the two-dimensional look-up table. The inductance and resistance components can be separated by processing the measurement data, thus reducing temperature drift and generating quantitative outputs. This study establishes and implements a two-dimensional look-up table that reduces the online computational complexity through structural modeling and by conducting an IPS operating principle analysis. This table is effectively compressed by considering the distribution characteristics of the sample data, thus simplifying the processing circuit. Moreover, power consumption is reduced. A real-time, built-in self-test (BIST) function is also designed and achieved by analyzing abnormal sample data. Experiment results show that the proposed method obtains the advantages of both analog and digital measurements, which are stable, reliable, and taken in real time, without the use of floating-point arithmetic and process-control-based components. The quantitative output of displacement measurement accelerates and stabilizes the system control and detection process. The method is particularly suitable for meeting the high-performance requirements of the aviation and aerospace fields. PMID:26729118

  1. Hybrid-integrated prism array optoelectronic targeting system

    NASA Astrophysics Data System (ADS)

    Chang, C. C.; Chang, H. C.; Tang, L. C.; Young, W. K.; Wang, J. C.; Huang, K. L.

    2005-11-01

    This investigation proposes a cost-effective, compact, and robust optoelectronic targeting system for measuring ballistic impact velocity and the distribution of projectile motion. The major elements of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of light source and photodetector. The average velocity and location of the projectile are determined according to the measured time intervals ( ˜10 -8 s) passing each pair. The system can accurately measure the velocity of a bullet as it leaves a gun barrel, as well as the velocity at specific points along the trajectory outside the firearm. Additionally, the system uses a widespread low-powered laser pointer as a light source. Compared with other optoelectronic targeting systems that use high-powered lasers, the proposed system is both economical and safe.

  2. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  3. RACOG and wRACOG: Two Probabilistic Oversampling Techniques

    PubMed Central

    Das, Barnan; Krishnan, Narayanan C.; Cook, Diane J.

    2016-01-01

    As machine learning techniques mature and are used to tackle complex scientific problems, challenges arise such as the imbalanced class distribution problem, where one of the target class labels is under-represented in comparison with other classes. Existing oversampling approaches for addressing this problem typically do not consider the probability distribution of the minority class while synthetically generating new samples. As a result, the minority class is not well represented which leads to high misclassification error. We introduce two Gibbs sampling-based oversampling approaches, namely RACOG and wRACOG, to synthetically generating and strategically selecting new minority class samples. The Gibbs sampler uses the joint probability distribution of attributes of the data to generate new minority class samples in the form of Markov chain. While RACOG selects samples from the Markov chain based on a predefined lag, wRACOG selects those samples that have the highest probability of being misclassified by the existing learning model. We validate our approach using five UCI datasets that were carefully modified to exhibit class imbalance and one new application domain dataset with inherent extreme class imbalance. In addition, we compare the classification performance of the proposed methods with three other existing resampling techniques. PMID:27041974

  4. Binarization With Boosting and Oversampling for Multiclass Classification.

    PubMed

    Sen, Ayon; Islam, Md Monirul; Murase, Kazuyuki; Yao, Xin

    2016-05-01

    Using a set of binary classifiers to solve multiclass classification problems has been a popular approach over the years. The decision boundaries learnt by binary classifiers (also called base classifiers) are much simpler than those learnt by multiclass classifiers. This paper proposes a new classification framework, termed binarization with boosting and oversampling (BBO), for efficiently solving multiclass classification problems. The new framework is devised based on the one-versus-all (OVA) binarization technique. Unlike most previous work, BBO employs boosting for solving the hard-to-learn instances and oversampling for handling the class-imbalance problem arising due to OVA binarization. These two features make BBO different from other existing works. Our new framework has been tested extensively on several multiclass supervised and semi-supervised classification problems using five different base classifiers, including neural networks, C4.5, k -nearest neighbor, repeated incremental pruning to produce error reduction, support vector machine, random forest, and learning with local and global consistency. Experimental results show that BBO can exhibit better performance compared to its counterparts on supervised and semi-supervised classification problems. PMID:25955858

  5. Detection advantages of spatial oversampling in imaging sensors

    NASA Astrophysics Data System (ADS)

    Wilson, Jerry A.; Caulfield, John T.; Dhar, Nibir K.

    2013-09-01

    Cyan Systems has recently developed an approach to focal plane assembly (FPA) architecture which represent a significant advancement in information extraction from the data as it is being collected. This approach utilizes sub-pixels which achieve a high degree of oversampling of the sensors Point Spread Function (PSF), well beyond the Nyquist limit for a critically sampled sensor. The data contained in an oversampled image has the obvious advantage of readily discriminating between focal plane and object generated artifacts as the first step in false alarm rejection. This effect is particularly useful at identification of radiation events. However there are further advantages that can be exploited through nearest neighbor subpixel correlation, and pooling that achieves significant noise reduction and therefore improved sensitivity. In Cyan's architecture these processes are accomplished for the first time at the input to the preamp in the ROIC. This approach not only allows improved fidelity in imaging, but further reduces false alarm rates, improves detection ranges, and demonstrates an improved ability to track closely spaced objects. The small pixels that enable this approach also ensure improved radiation hardness reducing the capture cross section. The architecture has been modeled and simulations run which illustrate the dramatic improvements possible.

  6. Distance Metric Based Oversampling Method for Bioinformatics and Performance Evaluation.

    PubMed

    Tsai, Meng-Fong; Yu, Shyr-Shen

    2016-07-01

    An imbalanced classification means that a dataset has an unequal class distribution among its population. For any given dataset, regardless of any balancing issue, the predictions made by most classification methods are highly accurate for the majority class but significantly less accurate for the minority class. To overcome this problem, this study took several imbalanced datasets from the famed UCI datasets and designed and implemented an efficient algorithm which couples Top-N Reverse k-Nearest Neighbor (TRkNN) with the Synthetic Minority Oversampling TEchnique (SMOTE). The proposed algorithm was investigated by applying it to classification methods such as logistic regression (LR), C4.5, Support Vector Machine (SVM), and Back Propagation Neural Network (BPNN). This research also adopted different distance metrics to classify the same UCI datasets. The empirical results illustrate that the Euclidean and Manhattan distances are not only more accurate, but also show greater computational efficiency when compared to the Chebyshev and Cosine distances. Therefore, the proposed algorithm based on TRkNN and SMOTE can be widely used to handle imbalanced datasets. Our recommendations on choosing suitable distance metrics can also serve as a reference for future studies. PMID:27185255

  7. P32Tools: Reduction of ISOPHOT P32 oversampled maps

    NASA Astrophysics Data System (ADS)

    Schulz, Bernhard; Lu, Nanyao; Peschke, Sibylle B.; Gabriel, Carlos; Khan, Iffat; Laureijs, René J.

    2003-02-01

    During the ISO mission, the ISOPHOT instrument has collected more than 1100 observations in oversampled mapping mode (AOT PHT32) in the wavelength range of 45 to 240 microns. The observations comprise mapping of small and large extended regions, but also faint point sources. PHT32 observations are affected by strong signal transients due to flux changes generated by the relatively fast chopper movement. A program described by Tuffs & Gabriel (these proceedings), was developed to correct for these effects. It was integrated in the ISOPHOT Interactive Analysis (PIA) via a graphical user interface (GUI), so that most aspects of the processing can be addressed in a coherent and user friendly environment. The resulting package ``P32Tools'' was introduced to the user community at three hands-on workshops on PHT32 processing held in spring 2001. The hands-on experience from these workshops lead to further improvements. Here we present an overview of the functionalities of the final release of this new software.

  8. Design and evaluation of a low-level RF control system analog/digital receiver for the ILC main Linacs

    SciTech Connect

    Mavric, Uros; Vidmar, Matjaz; Chase, Brian; /Fermilab

    2008-06-01

    The proposed RF distribution scheme for the two 15 km long ILC LINACs, uses one klystron to feed 26 superconducting RF cavities operating at 1.3 GHz. For a precise control of the vector sum of the signals coming from the SC cavities, the control system needs a high performance, low cost, reliable and modular multichannel receiver. At Fermilab we developed a 96 channel, 1.3 GHz analog/digital receiver for the ILC LINAC LLRF control system. In the paper we present a balanced design approach to the specifications of each receiver section, the design choices made to fulfill the goals and a description of the prototyped system. The design is tested by measuring standard performance parameters, such as noise figure, linearity and temperature sensitivity. Measurements show that the design meets the specifications and it is comparable to other similar systems developed at other laboratories, in terms of performance.

  9. High-accuracy fit of the poles of spectroscopy amplifiers designed for mixed analog-digital filtering

    SciTech Connect

    Bittanti, S.; Gatti, E.; Ripamonti, G.; Savaresi, S.M.

    1997-04-01

    In this paper, a method for the identification of the poles` and zeros` position of an analog amplifier for nuclear spectroscopy used as a prefilter for a subsequent digital filter setup is presented. The proposed technique is based upon a subspace-based system state-space identification (4SID) method, which is well suited to a data set constituted by a noisy measurement of the sampled impulse response of the circuit. The algorithm runs unassisted and does not require skills by the operator. The experiments confirm that by using the so-obtained pole values, the shape of the impulse response of the amplifier can be fit with much better than 1% accuracy. Consequently, the overall filtering (analog + digital) can have finite duration and a top with a flatness much better than 1%.

  10. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  11. Detecting target velocity and location using a novel optoelectronic sensing system

    NASA Astrophysics Data System (ADS)

    Chang, Chi Ching

    2004-12-01

    We propose a cost-effective, compact, and robust optoelectronic sensing system for measuring ballistic impact velocity and distribution of the projectile motion. The key elements consisted of this system are four photo-gates hybridized by compound one-dimensional prism array and analog/digital electronic components. The number of light sources and photodetectors used in a photo-gate was reduced to one pair of that. The time interval passing each pair can be measured precisely (~10-8 s). The average velocity and location of projectile are carried out according the measured time intervals. The system can precisely measure the velocity of a bullet as it leaves a gun barrel and the velocity toward the trajectory outside the firearm. Furthermore, the system uses a commonly found low-powered laser pointer as light source. Compared with other optoelectronic sensing systems that use high-powered lasers, our system is both economical and safe.

  12. A hybrid analog-digital phase-locked loop for frequency mode non-contact scanning probe microscopy.

    PubMed

    Mehta, M M; Chandrasekhar, V

    2014-01-01

    Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase, or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency resolution required for SPM. To increase the resolution, all-digital PLLs requiring sophisticated digital signal processors or field programmable gate arrays have also been implemented. We describe here a hybrid analog/digital PLL where most of the components are implemented using discrete analog integrated circuits, but the frequency resolution is provided by a direct digital synthesis chip controlled by a simple peripheral interface controller (PIC) microcontroller. The PLL has excellent frequency resolution and noise, and can be controlled and read by a computer via a universal serial bus connection. PMID:24517775

  13. A hybrid analog-digital phase-locked loop for frequency mode non-contact scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Mehta, M. M.; Chandrasekhar, V.

    2014-01-01

    Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase, or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency resolution required for SPM. To increase the resolution, all-digital PLLs requiring sophisticated digital signal processors or field programmable gate arrays have also been implemented. We describe here a hybrid analog/digital PLL where most of the components are implemented using discrete analog integrated circuits, but the frequency resolution is provided by a direct digital synthesis chip controlled by a simple peripheral interface controller (PIC) microcontroller. The PLL has excellent frequency resolution and noise, and can be controlled and read by a computer via a universal serial bus connection.

  14. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system

    NASA Astrophysics Data System (ADS)

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper.

  15. Synchronization sampling method based on delta-sigma analog-digital converter for underwater towed array system.

    PubMed

    Jiang, Jia-Jia; Duan, Fa-Jie; Li, Yan-Chao; Hua, Xiang-Ning

    2014-03-01

    Synchronization sampling is very important in underwater towed array system where every acquisition node (AN) samples analog signals by its own analog-digital converter (ADC). In this paper, a simple and effective synchronization sampling method is proposed to ensure synchronized operation among different ANs of the underwater towed array system. We first present a master-slave synchronization sampling model, and then design a high accuracy phase-locked loop to synchronize all delta-sigma ADCs to a reference clock. However, when the master-slave synchronization sampling model is used, both the time-delay (TD) of messages traveling along the wired transmission medium and the jitter of the clocks will bring out synchronization sampling error (SSE). Therefore, a simple method is proposed to estimate and compensate the TD of the messages transmission, and then another effective method is presented to overcome the SSE caused by the jitter of the clocks. An experimental system with three ANs is set up, and the related experimental results verify the validity of the synchronization sampling method proposed in this paper. PMID:24689606

  16. Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

    PubMed Central

    Scholvin, Jörg; Kinney, Justin P.; Bernstein, Jacob G.; Moore-Kochlacs, Caroline; Kopell, Nancy; Fonstad, Clifton G.; Boyden, Edward S.

    2015-01-01

    Objective Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are close-packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes, to enable spatially oversampled recording of neural activity in a scalable fashion. Methods Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance Finally, we perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites. PMID:26699649

  17. A photonic analog-to-digital converter using phase modulation and self-coherent detection with spatial oversampling.

    PubMed

    Golani, Ori; Mauri, Luca; Pasinato, Fabiano; Cattaneo, Cristian; Consonnni, Guido; Balsamo, Stefano; Marom, Dan M

    2014-05-19

    We propose a new type of photonic analog-to-digital converter (ADC), designed for high-resolution (>7 bit) and high sampling rates (scalable to tens of GS/s). It is based on encoding the input analog voltage signal onto the phase of an optical pulse stream originating from a mode-locked laser, and uses spatial oversampling as a means to improve the conversion resolution. This paper describes the concept of spatial oversampling and draws its similarities to the commonly used temporal oversampling. The design and fabrication of a LiNbO(3)/silica hybrid photonic integrated circuit for implementing the spatial oversampling is shown, and its abilities are demonstrated experimentally by digitizing gigahertz signals (frequencies up to 18GHz) at an undersampled rate of 2.56GS/s with a conversion resolution of up to 7.6 effective bits. Oversampling factors of 1-4 are demonstrated. PMID:24921345

  18. Multiplexed Oversampling Digitizer in 65 nm CMOS for Column-Parallel CCD Readout

    SciTech Connect

    Grace, Carl; Walder, Jean-Pierre; von der Lippe, Henrik

    2012-04-10

    A digitizer designed to read out column-parallel charge-coupled devices (CCDs) used for high-speed X-ray imaging is presented. The digitizer is included as part of the High-Speed Image Preprocessor with Oversampling (HIPPO) integrated circuit. The digitizer module comprises a multiplexed, oversampling, 12-bit, 80 MS/s pipelined Analog-to-Digital Converter (ADC) and a bank of four fast-settling sample-and-hold amplifiers to instrument four analog channels. The ADC multiplexes and oversamples to reduce its area to allow integration that is pitch-matched to the columns of the CCD. Novel design techniques are used to enable oversampling and multiplexing with a reduced power penalty. The ADC exhibits 188 ?V-rms noise which is less than 1 LSB at a 12-bit level. The prototype is implemented in a commercially available 65 nm CMOS process. The digitizer will lead to a proof-of-principle 2D 10 Gigapixel/s X-ray detector.

  19. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  20. Optoelectronic packaging: A review

    SciTech Connect

    Carson, R.F.

    1993-09-01

    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  1. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  2. Towards optoelectronic urea biosensors.

    PubMed

    Pokrzywnicka, Marta; Koncki, Robert; Tymecki, Łukasz

    2015-03-01

    Integration of immobilized enzymes with light-emitting diodes (LEDs) leads to the development of optoelectronic enzyme-based biosensors. In this work, urease, used as a model enzyme, immobilized in the form of an open-tubular microbioreactor or biosensing membrane that has been integrated with two red LEDs. It forms complete, fiberless, miniaturized, and extremely economic biooptoelectronic devices useful for nonstationary measurements under flow analysis conditions. Both enzyme-based biodevices, operating according to the paired emitter detector diode (PEDD) principle, allow relatively fast, highly sensitive, and well-reproducible urea detection in the millimolar range of concentrations. Potential analytical applications of the developed urea bioPEDDs have been announced. Both presented constructions will be easily adapted for the development of other optoelectronic biosensors exploring various enzyme-based schemes of biodetection. PMID:25619983

  3. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  4. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-06-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  5. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  6. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  7. Multifrequency optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Jiang, Yang; Liang, Jianhui; Bai, Guangfu; Hu, Lin; Cai, Shaohong; Li, Hongxia; Shan, Yuanyuan; Ma, Chuang

    2014-11-01

    We propose a simple and cost-effective multifrequency optoelectronic oscillator (OEO) which is able to simultaneously generate two or more independent microwave signals by adding parallel filtering branches in the feedback loop. In the experimental demonstration, two signals with frequencies of 20 and 9 GHz are successfully generated. Compared with a conventional OEO, the generated signals have no additional noise and do not interfere with each other. The side-mode suppression by the optical dual-loop configuration is effective for both channels. The measured side-mode suppression ratios are larger than 65 dB, and the phase noises at a 10-kHz frequency offset are -108 and -113 dBc/Hz for 20 and 9-GHz signals, respectively.

  8. A novel algorithm combining oversampling and digital lock-in amplifier of high speed and precision

    NASA Astrophysics Data System (ADS)

    Li, Gang; Zhou, Mei; He, Feng; Lin, Ling

    2011-09-01

    Because of a large amount of arithmetic in the standard digital lock-in detection, a high performance processor is needed to implement the algorithm in real time. This paper presents a novel algorithm that integrates oversampling and high-speed lock-in detection. The algorithm sets the sampling frequency as a whole-number multiple of four of the input signal frequency, and then uses the common downsampling technology to lower the sampling frequency to four times of the input signal frequency. It could effectively remove the noise interference and improve the detection accuracy. After that the phase sensitive detector is implemented. It simply does the addition and subtraction on four points in the period of same phase and replaces almost all the multiplication operations to speed up digital lock-in detection calculation substantially. Furthermore, the correction factor is introduced to improve the calculation accuracy of the amplitude, and an error caused by the algorithm in theory can be eliminated completely. The results of the simulation and actual experiments show that the novel algorithm combining digital lock-in detection and oversampling not only has the high precision, but also has the unprecedented speed. In our work, the new algorithm is suitable for the real-time weak signal detection in the general microprocessor not just digital signal processor.

  9. Rethinking data collection and signal processing. 1. Real-time oversampling filter for chemical measurements.

    PubMed

    Laude, Nicholas D; Atcherley, Christopher W; Heien, Michael L

    2012-10-01

    Minimizing noise in chemical measurements is critical to achieve low limits of detection and accurate measurements. We describe a real-time oversampling filter that offers a method to reduce stochastic noise in a time-dependent chemical measurement. The power of this technique is demonstrated in its application to the separation of dopamine and serotonin by micellar electrokinetic chromatography with amperometric detection. Signal-to-noise ratios were increased by almost an order of magnitude, allowing for limits of detection of 100 and 120 amol, respectively. Real-time oversampling filters can be implemented using simple software algorithms and require no change to existing experimental apparatus. The application is not limited to analytical separations, and this technique can be used to improve the signal-to-noise ratio in any experiment where the necessary sampling rate is less than the maximum sampling rate of the analog-to-digital converter. Theory, implementation, and the performance of this filter are described. We propose that this technique should be the default mode of operation for an analog-to-digital converter. PMID:22978644

  10. Nanoscale Optoelectronic Photosynthetic Devices

    NASA Astrophysics Data System (ADS)

    Greenbaum, Elias; Lee, Ida; Guillorn, Michael; Lee, James W.; Simpson, Michael L.

    2001-03-01

    This presentation provides an overview and recent progress in the Oak Ridge National Laboratory research program in molecular electronics and green plant photosynthesis. The photosynthetic reaction center is a nanoscale molecular diode and photovoltaic device. The key thrust of our research program is the construction of molecular electronic devices from these nanoscale structures. Progress in this multidisciplinary research program has been demonstrated by direct electrical contact of emergent electrons with the Photosystem I (PS I) reaction center by nanoparticle precipitation. Demonstration of stable diode properties of isolated reaction centers combined with the ability to orient PS I by self-assembly on a planar surface, makes this structure a good building block for 2-D and potentially 3-D devices. Metallization of isolated PS I does not alter their fundamental photophysical properties and they can be bonded to metal surfaces. We report here the first measurement of photovoltage from single PS I reaction centers. Working at the Cornell University National Nanofabrication Facility, we have constructed sets of dissimilar metal electrodes separated by distances as small as 6 nm. We plan to use these structures to make electrical contact to both ends of oriented PSI reaction centers and thereby realize biomolecular logic circuits. Potential applications of PSI reaction centers for optoelectronic applications as well as molecular logic device construction will be discussed.

  11. Optoelectronic integrated tweezers

    NASA Astrophysics Data System (ADS)

    McGreehin, Simon J.; O'Faolin, Liam; Roberts, John; Krauss, Thomas; Dholakia, Kishan

    2004-10-01

    We demonstrate the optical manipulation of microscopic particles within a single optoelectronic device, whose footprint measures 2mm by 3mm, and which is realised entirely in planar technology. The device is fabricated in a GaAs/AlGaAs heterostructure, and consists of two facing banks of lasers that are separated by an etched channel. Particles within this channel experience the simple trapping force of two counter-propagating beams. The lasers operate at a wavelength of 980nm, and each gives up to 10mW of power in a single transverse optical mode. This power is sufficient to deflect, decelerate and hold a variety of micron-scale particles, including fluorescent polymer spheres, and cells in solution. The first results were obtained using planar etched facets, giving highly divergent beams. More elegant beam shapes can be produced by etching curved facets. The main attractions of this technology are its size and self-alignment properties: Many devices can fit into a fraction of the space occupied by a traditional tweezer set-up. Using photo-lithography, the alignment of the lasers is 'perfect', avoiding the difficulties experienced in traditional tweezers. The concept we demonstrate is a truly integrated optical tweezer that is mass-producible and does not require any complex instrumentation to operate.

  12. Optoelectronic fringe projection operations

    NASA Astrophysics Data System (ADS)

    Garavaglia, Mario; Rabal, Hector J.; Aguirre, E.

    1990-07-01

    We present a simple optoelectronical fringe projection method for topographic or deformation study of objects. Programmed positioning and repositioning can also be performed. 1. DESCRIPTION An incoherent method for fringe projection operations was recently reported'' using photographic procedures. It is extended now to real time operation using an LCD video projector and a CCD camera. Fringes consisting in Rbnchitype rulings are generated in a personal computer and projected onto an object by using a Kodak LCD colour video projector. Its image is then read by a SVHS-CCD Panasonic camera and electronically memorized. This fringe pattern contains information concerning the position and topography of the object stored as fringe phase modulation. A standard state of the object can be frozen in the screen of a monitor and its evolution deformation or misspositioning followed through the Moire between current and stored fringes. Topography of the object expressed as a mathemati cal functi on h ( x y) and its time evolution can alsO be determined from the memorized data. . Besides a conjugated grid can be generated so that when the latter is projected onto the object the observed fringes are corrected to straight lines resembling the original Ronchi rul ings i. e. distortion produced by object topography is cancelled out. Deformations with respect to this state are straightforwardly interpreted by an observer both in magnitude and sign. The system can be made

  13. Data-thinning algorithms for "over-sampled" multi-parameter ocean optics data.

    PubMed

    Smart, Jeffrey H; Barrett, Kevin T

    2008-12-22

    The deployment of towed depth-profiling paravane systems and autonomous gliders is providing a wealth of high-resolution oceanographic datasets. These datasets are, however, over-sampled in space and time. This paper describes a data-adaptive, user-configurable method that has been used to significantly reduce the time/space density of such data without compromising the inherent scientific information that they provide. The method involves sub-sampling at fixed space and time intervals with additional samples being kept given either a significant change (1) in the depth extent of the alongtrack profiles, or (2) in the values of the profiles themselves. An example is provided showing how well the algorithm works on nearly 5,000 chlorophyll fluorescence profiles collected off the coast of Australia. PMID:19104572

  14. VLSI Potentiostat Array With Oversampling Gain Modulation for Wide-Range Neurotransmitter Sensing.

    PubMed

    Stanacevic, M; Murari, K; Rege, A; Cauwenberghs, G; Thakor, N V

    2007-03-01

    A 16-channel current-measuring very large-scale integration (VLSI) sensor array system for highly sensitive electrochemical detection of electroactive neurotransmiters like dopamine and nitric-oxide is presented. Each channel embeds a current integrating potentiostat within a switched-capacitor first-order single-bit delta-sigma modulator implementing an incremental analog-to-digital converter. The duty-cycle modulation of current feedback in the delta-sigma loop together with variable oversampling ratio provide a programmable digital range selection of the input current spanning over six orders of magnitude from picoamperes to microamperes. The array offers 100-fA input current sensitivity at 3.4-muW power consumption per channel. The operation of the 3 mm times3 mm chip fabricated in 0.5-mum CMOS technology is demonstrated with real-time multichannel acquisition of neurotransmitter concentration. PMID:23851522

  15. The Synthetic-Oversampling Method: Using Photometric Colors to Discover Extremely Metal-poor Stars

    NASA Astrophysics Data System (ADS)

    Miller, A. A.

    2015-09-01

    Extremely metal-poor (EMP) stars ([Fe/H] ≤ ‑3.0 dex) provide a unique window into understanding the first generation of stars and early chemical enrichment of the universe. EMP stars are exceptionally rare, however, and the relatively small number of confirmed discoveries limits our ability to exploit these near-field probes of the first ∼500 Myr after the Big Bang. Here, a new method to photometrically estimate [Fe/H] from only broadband photometric colors is presented. I show that the method, which utilizes machine-learning algorithms and a training set of ∼170,000 stars with spectroscopically measured [Fe/H], produces a typical scatter of ∼0.29 dex. This performance is similar to what is achievable via low-resolution spectroscopy, and outperforms other photometric techniques, while also being more general. I further show that a slight alteration to the model, wherein synthetic EMP stars are added to the training set, yields the robust identification of EMP candidates. In particular, this synthetic-oversampling method recovers ∼20% of the EMP stars in the training set, at a precision of ∼0.05. Furthermore, ∼65% of the false positives from the model are very metal-poor stars ([Fe/H] ≤ ‑2.0 dex). The synthetic-oversampling method is biased toward the discovery of warm (∼F-type) stars, a consequence of the targeting bias from the Sloan Digital Sky Survey/Sloan Extension for Galactic Understanding survey. This EMP selection method represents a significant improvement over alternative broadband optical selection techniques. The models are applied to >12 million stars, with an expected yield of ∼600 new EMP stars, which promises to open new avenues for exploring the early universe.

  16. A new cluster-based oversampling method for improving survival prediction of hepatocellular carcinoma patients.

    PubMed

    Santos, Miriam Seoane; Abreu, Pedro Henriques; García-Laencina, Pedro J; Simão, Adélia; Carvalho, Armando

    2015-12-01

    Liver cancer is the sixth most frequently diagnosed cancer and, particularly, Hepatocellular Carcinoma (HCC) represents more than 90% of primary liver cancers. Clinicians assess each patient's treatment on the basis of evidence-based medicine, which may not always apply to a specific patient, given the biological variability among individuals. Over the years, and for the particular case of Hepatocellular Carcinoma, some research studies have been developing strategies for assisting clinicians in decision making, using computational methods (e.g. machine learning techniques) to extract knowledge from the clinical data. However, these studies have some limitations that have not yet been addressed: some do not focus entirely on Hepatocellular Carcinoma patients, others have strict application boundaries, and none considers the heterogeneity between patients nor the presence of missing data, a common drawback in healthcare contexts. In this work, a real complex Hepatocellular Carcinoma database composed of heterogeneous clinical features is studied. We propose a new cluster-based oversampling approach robust to small and imbalanced datasets, which accounts for the heterogeneity of patients with Hepatocellular Carcinoma. The preprocessing procedures of this work are based on data imputation considering appropriate distance metrics for both heterogeneous and missing data (HEOM) and clustering studies to assess the underlying patient groups in the studied dataset (K-means). The final approach is applied in order to diminish the impact of underlying patient profiles with reduced sizes on survival prediction. It is based on K-means clustering and the SMOTE algorithm to build a representative dataset and use it as training example for different machine learning procedures (logistic regression and neural networks). The results are evaluated in terms of survival prediction and compared across baseline approaches that do not consider clustering and/or oversampling using the

  17. Toward the optoelectronic ULSI: drivers and barriers

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2004-06-01

    We describe the state of the art in optoelectronic component integration, and the current degree of commercial deployment of integrated optoelectronics as dictated by the balance of market pull and technology push. We also present the long-term outlook for optoelectronic integration, including the drivers and barriers that set the roadmap toward the optoelectronic ULSI. We discuss an optoelectronic integration platform that utilizes organic and inorganic materials for the hybrid integration of passive and active optical elements.

  18. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.

  19. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  20. A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

    PubMed

    Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

    2015-12-01

    We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor. PMID:26742139

  1. Oversampling in virtual visual sensors as a means to recover higher modes of vibration

    NASA Astrophysics Data System (ADS)

    Shariati, Ali; Schumacher, Thomas

    2015-03-01

    Vibration-based structural health monitoring (SHM) techniques require modal information from the monitored structure in order to estimate the location and severity of damage. Natural frequencies also provide useful information to calibrate finite element models. There are several types of physical sensors that can measure the response over a range of frequencies. For most of those sensors however, accessibility, limitation of measurement points, wiring, and high system cost represent major challenges. Recent optical sensing approaches offer advantages such as easy access to visible areas, distributed sensing capabilities, and comparatively inexpensive data recording while having no wiring issues. In this research we propose a novel methodology to measure natural frequencies of structures using digital video cameras based on virtual visual sensors (VVS). In our initial study where we worked with commercially available inexpensive digital video cameras we found that for multiple degrees of freedom systems it is difficult to detect all of the natural frequencies simultaneously due to low quantization resolution. In this study we show how oversampling enabled by the use of high-end high-frame-rate video cameras enable recovering all of the three natural frequencies from a three story lab-scale structure.

  2. Anthropogenic Emissions of Highly Reactive Volatile Organic Compounds (HRVOCs) Inferred from Oversampling of OMI HCHO Columns

    NASA Technical Reports Server (NTRS)

    Zhu, Lei; Jacob, Daniel; Mickley, Loretta; Marais, Eloise; Zhang, Aoxing; Cohan, Daniel; Yoshida, Yasuko; Duncan, Bryan; Abad, Gonzalo Gonzalez; Chance, Kelly; DeSmedt, Isabelle

    2014-01-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005 - 2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas-Fort Worth. By spatially integrating the individual urban-industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260 plus or minus 110 kmol h-1 and implies a factor of 5.5 plus or minus 2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. With this approach we are able to monitor the trend in HRVOC emissions over the US, in particular from the oil-gas industry, over the past decade.

  3. High-resolution over-sampling reconstruction algorithm for a microscanning thermal microscope imaging system

    NASA Astrophysics Data System (ADS)

    Gao, Meijing; Wang, Jingyuan; Xu, Wei; Guan, Congrong

    2016-05-01

    Due to environmental factors, mechanical vibration, alignment error and other factors, the micro-displacement of four collected images deviates from the standard 2 × 2 micro-scanning images in our optical micro-scanning thermal microscope imaging system. This influences the quality of the reconstructed image and the spatial resolution of the imaging system cannot be improved. To solve this problem and reduce the optical micro-scanning errors, we propose an image reconstruction method based on the principle of the Second-order Taylor series expansion. The algorithm can obtain standard 2 × 2 microsanning under-sampling images from four non-standard 2 × 2 microsanning under-sampling images and then can obtain high spatial oversample resolution image. Simulations and experiments show that the proposed technique can reduce the optical micro-scanning errors and improve the systems spatial resolution. The algorithm has low computational complexity, and it is simple and fast. Furthermore this technique can be applied to other electro-optical imaging systems to improve their resolutions.

  4. Oversampling advances in millimeter-wave scan imaging using inexpensive neon indicator lamp detectors

    NASA Astrophysics Data System (ADS)

    Levanon, Assaf; Kopeika, Natan S.; Yitzhaky, Yitzhak; Abramovich, Amir; Rozban, Daniel; Joseph, Hezi; Aharon, Avihai; Belenky, Alex; Gefen, Michael; Yadid-Pecht, Orly

    2013-06-01

    In recent years, much effort has been invested to develop room temperature inexpensive, but sensitive, millimeter wave (MMW) and terahertz (THz) detectors that can be used as pixels in focal plane arrays, which is important for real-time imaging. A new 18×2 neon indicator lamp MMW/THz scanner was developed. The components of the camera include horizontally shifted two-column glow discharge detectors in a scanning array. The detectors, costing about 50 cents each, are wired to a preprocessing card, a VLSI board, and a motor for scanner movement. A description of the VLSI Verilog programmable hardware of the new scanner, the physical architecture, the software user interface, and imaging results at 97 GHz are presented. At this stage, the emphasis is focused on the lamp exposure time and spatial resolution when the scanning is performed horizontally. In the future it is planned to expose all pixels simultaneously for real-time imaging. New software capabilities allow the application of digital image enhancement algorithms. Fast scanning permits obtaining images in 1 to 5 s. Oversampling yields a sharper edge response and a higher signal-to-noise ratio.

  5. Anthropogenic emissions of highly reactive volatile organic compounds inferred from oversampling of OMI HCHO columns

    NASA Astrophysics Data System (ADS)

    Zhu, L.; Jacob, D. J.; Mickley, L. J.; Marais, E. A.; Cohan, D. S.; Yoshida, Y.; Duncan, B. N.; Gonzalez Abad, G.; Chance, K.

    2014-12-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously to constrain emissions of isoprene from vegetation, but application to US anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005-2008 enables quantitative detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas/Fort Worth. By spatially integrating the individual urban/industrial HCHO plumes observed by OMI we can constrain the corresponding HCHO-weighted HRVOC emissions. Application to the Houston plume indicates a HCHO source of 260±110 kmol h-1 and implies a factor of 5.5±2.4 underestimate of anthropogenic HRVOC emissions in the US Environmental Protection Agency inventory. This approach allows us to monitor trends in HRVOC emissions over the US, in particular from the urban areas and oil/gas industry.

  6. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  7. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  8. Optoelectronic device for hematocrit measurements

    NASA Astrophysics Data System (ADS)

    Pluta, M.; Milewska, D.; Mazikowski, A.

    2015-09-01

    An optoelectronic system for measurements of hematocrit level (HCT) in the whole human blood is presented. Proposed system integrates a dedicated optoelectronic sensor, a microcontroller and a small LCD display in a low cost, battery-powered, handheld device. Chosen method for determining blood hematocrit level is based on optical properties of whole blood in visible and NIR wavelength range. Measurements with the use of proposed system require blood samples (small drop in the range of microliters) which is placed in the micro cuvette. Then, absorption of the sample is measured at wavelengths of 570 nm and 880 nm. Prototype of the device was build and tested. Test results confirmed proper operation of the device with correct metrological parameters in application to HCT level measurements. Such a portable device can be used as a tool of bedside diagnosis, which becomes interesting alternative to full laboratory tests.

  9. Smectites in the Rim of Endeavour Crater, Mars, Detected Using Along-Track Oversampled CRISM Observations

    NASA Astrophysics Data System (ADS)

    Fox, V. K.; Arvidson, R. E.; Squyres, S. W.; Murchie, S. L.

    2014-12-01

    Smectite minerals in the rim of the Noachian aged Endeavour Crater demonstrate that aqueous alteration under relatively mild acidity and oxidation potential was a pervasive process, probably in early Martian history. Reflectance spectra retrieved from along-track oversampled Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) observations have been key in directing the Opportunity rover to relatively small outcrops with smectite signatures. CRISM I/F data were converted to single scattering albedo (SSA) using the radiative code package DISORT to best identify subtle smectite absorption features without dependence on column ratios or assumed atmospheric transmission spectra. Scattering and absorption by atmospheric dust and ice aerosols are modeled from first principles, and CO2, CO and water vapor absorptions are modeled as a function of atmospheric column mass. Surface scattering assumes a Hapke surface model with a modestly backscattering single particle phase function. Whereas SSA values are retrieved from 0.4 to 2.65 μm, we primarily consider the 2.1 and 2.5 μm region. Metal-OH combination absorptions are clearly evident on Mars at these wavelengths and are characteristic of smectites. Spectral noise in this region is minimized by both instrumental and physical factors. Shallow absorptions at 2.3 and 2.4 μm, indicating Fe and Mg bearing smectites, were detected in the floor of Marathon Valley, on the western edge of Endeavour Crater, and were evident in several overlapping CRISM observations. Exploration of these outcrops by Opportunity establishes the geologic context and paleoenvironmental conditions associated with the formation of the smectites. Al-bearing smectites are also detected in several scenes over the western rim of Endeavour, particularly in sun-facing and soil-free outcrops.

  10. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  11. Packaging investigation of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhike, Zhang; Yu, Liu; Jianguo, Liu; Ninghua, Zhu

    2015-10-01

    Compared with microelectronic packaging, optoelectronic packaging as a new packaging type has been developed rapidly and it will play an essential role in optical communication. In this paper, we try to summarize the development history, research status, technology issues and future prospects, and hope to provide a meaningful reference. Project supported by the National High Technology Research and Development Program of China (Nos. 2013AA014201, 2013AA014203) and the National Natural Science Foundation of China (Nos. 61177080, 61335004, 61275031).

  12. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  13. New CRISM Along-Track Oversampled Observations and Implications for Spectral Mapping at Fine Spatial Scales

    NASA Astrophysics Data System (ADS)

    Coman, E. I.; Arvidson, R. E.; Stein, N.; Murchie, S. L.; McGovern, A.; Seelos, K. D.; Seelos, F. P.; Humm, D. C.

    2013-12-01

    The Mars Reconnaissance Orbiter (MRO) Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) is a hyperspectral line scanner imaging system (0.362-3.920 micrometers at 6.55 nm/channel) that was designed to acquire targeted images at ~18 m/pixel spatial sampling. Past experiments have shown that by appropriately commanding the gimbal system, CRISM can also collect Along-Track Oversampled (ATO) observations with overlapping pixels that can be sharpened to along-track spatial resolutions as fine as 5 m/pixel. These observations were impossible to sharpen to a constant along-track spatial resolution within scenes because pixel overlap varied significantly due to irregularities in gimbal motion during imaging of targets. A new observational scheme has been implemented in which gimbaling has been adjusted to keep overlap constant, allowing consistent regularization and sharpening across the entire scene. We demonstrate two processing approaches for spatial sharpening of several scenes acquired with the new gimbaling approach. The scenes are: 1. A recent crater with dark ejecta located at 23.7N, 220.1E (areocentric) ATO00029FC9; 2. Layered rocks uplifted in crater near Solis Dorsa located at 23.14N, 281.37E ATO00029F00, and 3. Dikes in Valles Marineris Coprates Chasma located at 15.02N, 306.96 ATO00029EFD. The two methods are Tikhonov damped least squares spatial sharpening implemented in one dimensional and two dimensional schemes. The Tikhonov method for spatial sharpening replaces the overlapping pixels with smaller, regularly spaced pixels by minimizing the sums of squares of deviations between the observed data matrix and a matrix of regularized, smaller-sized pixels premultiplied by the imaging system transfer function, including ground motion smear. A side constraint is introduced to minimize the sums of squares of deviations of first derivatives for the regularized pixel matrix. This side constraint minimizes noise, and the extent of this minimization is

  14. Oversampling Selective Accumulation Trapped Ion Mobility Spectrometry Coupled to FT-ICR MS: Fundamentals and Applications.

    PubMed

    Benigni, Paolo; Fernandez-Lima, Francisco

    2016-07-19

    In the present paper, we describe the fundamentals and analytical advantages of Oversampling Selective Accumulation Trapped Ion Mobility Spectrometry (OSA-TIMS) when coupled to ultrahigh resolution mass analyzers (e.g., FT-ICR MS). During TIMS analysis, ion packages are spatially resolved based on their mobilities along the TIMS analyzer axis and multiple strategies can be utilized during the trapping and elution of the ion population of interest. In the case of OSA-TIMS-FT-ICR MS, the TIMS operation sequence, trapping conditions, and operations are optimized to increase the signal-to-noise and the number of points across the mobility domain, which leads to more accurate mobility and mass measurements. Experimental results show that accurate ion-neutral collision cross sections (<1%) can be measured using OSA-TIMS-FT-ICR MS with high mobility resolving powers (RIMS up to 250), high mass accuracy (<1 ppm), and ultrahigh mass resolution (RMS up to 600-1200k at m/z 400) in a single analysis. The analytical advantages of OSA-TIMS over SA-TIMS were illustrated for the analysis of structural peptide isomers (SDGRG and GRGDS [M + H](+)), conformational isomers (AT-hook peptide 3 KRGRGRPRK [M + 2H](+2)), and a complex mixture of polyaromatic hydrocarbons (PAH) from coal tar. Baseline separation of the structural peptide isomers SDGRG and GRGDS, [M + H](+), was observed, and three conformations were identified for the AT-hook peptide 3 KRGRGRPRK [M + 2H](+2) during OSA-TIMS-FT-ICR MS. A 2-fold increase in the number of molecular features and a 2-6-fold signal-to-noise increase was observed for OSA-TIMS when compared with SA-TIMS during the PAH analysis. This work provides the proof-of-principle for further application of OSA-TIMS-FT-ICR MS for the unsupervised analysis of complex mixtures based on the characterization of the conformational space and the assignment of chemical formulas in a single analysis. PMID:27340830

  15. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  16. Cell rotation using optoelectronic tweezers.

    PubMed

    Liang, Yuan-Li; Huang, Yuan-Peng; Lu, Yen-Sheng; Hou, Max T; Yeh, J Andrew

    2010-01-01

    A cell rotation method by using optoelectronic tweezers (OET) is reported. The binary image of a typical OET device, whose light and dark sides act as two sets of parallel plates with different ac voltages, was used to create a rotating electric field. Its feasibility for application to electrorotation of cells was demonstrated by rotating Ramos and yeast cells in their pitch axes. The electrorotation by using OET devices is dependent on the medium and cells' electrical properties, the cells' positions, and the OET device's geometrical dimension, as well as the frequency of the electric field. PMID:21267435

  17. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  18. A programmable second order oversampling CMOS sigma-delta analog-to-digital converter for low-power sensor interface electronics

    NASA Astrophysics Data System (ADS)

    Soundararajan, R.; Srivastava, A.; Xu, Y.

    2010-04-01

    A programmable second order oversampling sigma-delta analog-to-digital converter (ADC) is designed and fabricated in 0.5 μm n-well CMOS process for low-power interface electronics of a sensor node in wireless sensor networks. The sigma-delta ADC can be programmed to operate at three different oversampling ratios of 16, 32, and 64 to give three different resolutions of 9, 12 and 14 bits, respectively which impact the power consumption of the sensor module. The major part of power is consumed in the decimator of the ADC by the integrators which operate at the highest sampling rate. Hence, an alternate design is introduced in the integrator stages by inserting sign extension coder circuits and reusing the same integrators for different resolutions and oversampling ratios. The programmable ADC can be interfaced with on or off-chip nanosensors for detection of traces of toxic gases and chemicals.

  19. Analysis and implementation of optoelectronic network routers

    NASA Astrophysics Data System (ADS)

    Raksapatcharawong, Mongkol

    1999-11-01

    Network routers based on optoelectronic technology have the potential to solve the network bandwidth problem which is becoming more and more critical in multiprocessor systems. By combining high-bandwidth optoelectronic I/O technology and high-performance CMOS logic technology, optoelectronic network routers promise both sophisticated switching functions as well as ample bandwidth that scales well with the performance of current and next-generation processors. Performance analysis and implementation of optoelectronic routers or other optoelectronic chips with this level of complexity, however, have not been pursued to a great extent before. This dissertation uses analytical and semi-empirical models to quantify and estimate the performance of optoelectronic routers at the chip and system levels, and it studies the feasibility of implementing such routers using GaAs MESFET/LED/OPFET and CMOS/SEED integrated technologies. The results show that optoelectronic routers may not only be technologically viable but also can provide certain architectural advantages in multiprocessor systems. Nevertheless, as shown in this dissertation, three major requirements must be met to effectively utilize this new technology. First, small and robust packaging at the chip and system levels that ensure high-bandwidth operation at useful interconnection distances and topologies are needed. Second, optoelectronic compatible CAD tools that effectively integrate a large array of optoelectronic devices with complex circuitry while retaining the potential performance of optoelectronic chips are needed. Third, optoelectronic devices must have uniform characteristics and reliability. In addition, advanced architectural techniques that efficiently exploit high-bandwidth optical interconnects are also required.

  20. FALSE-ALARM PROBABILITY IN RELATION TO OVERSAMPLED POWER SPECTRA, WITH APPLICATION TO SUPER-KAMIOKANDE SOLAR NEUTRINO DATA

    SciTech Connect

    Sturrock, Peter A.; Scargle, Jeffrey D.

    2010-07-20

    The term 'false-alarm probability' denotes the probability that at least one out of M independent power values in a prescribed search band of a power spectrum computed from a white-noise time series is expected to be as large as or larger than a given value. The usual formula is based on the assumption that powers are distributed exponentially, as one expects for power measurements of normally distributed random noise. However, in practice, one typically examines peaks in an oversampled power spectrum. It is therefore more appropriate to compare the strength of a particular peak with the distribution of peaks in oversampled power spectra derived from normally distributed random noise. We show that this leads to a formula for the false-alarm probability that is rather more conservative than the familiar formula. We also show how to combine these results with a Bayesian method for estimating the probability of the null hypothesis (that there is no oscillation in the time series), and we discuss as an example the application of these procedures to Super-Kamiokande solar neutrino data.

  1. A combined finite element and oversampling multiscale Petrov-Galerkin method for the multiscale elliptic problems with singularities

    NASA Astrophysics Data System (ADS)

    Song, Fei; Deng, Weibing; Wu, Haijun

    2016-01-01

    In this paper, we construct a combined finite element and oversampling multiscale Petrov-Galerkin method (FE-OMsPGM) to solve the multiscale problems which may have singularities in some special portions of the computational domain. For example, in the simulation of subsurface flow, singularities lie in the porous media with channelized features, or in near-well regions since the solution behaves like the Green function. The basic idea of FE-OMsPGM is to utilize the traditional finite element method (FEM) directly on a fine mesh of the problematic part of the domain and using the Petrov-Galerkin version of oversampling multiscale finite element method (OMsPGM) on a coarse mesh of the other part. The transmission condition across the FE-OMsPG interface is treated by the penalty technique. The FE-OMsPGM takes advantages of the FEM and OMsPGM, which uses much less DOFs than the standard FEM and may be more accurate than the OMsPGM for problems with singularities. Although the error analysis is carried out under the assumption that the oscillating coefficients are periodic, our method is not restrict to the periodic case. Numerical examples with periodic and random highly oscillating coefficients, as well as the multiscale problems on the L-shaped domain, and multiscale problems with high contrast channels or well-singularities are presented to demonstrate the efficiency and accuracy of the proposed method.

  2. Optoelectronic bistability effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Lagomarsino, Stefano

    2008-09-01

    A recombination bistability driven only by light irradiance, without any intervention of an externally imposed electric or magnetic field, is possible in doped semiconductors in which recombination is assured by multiply charged centers. This effect is allowed by the competition between two or more different recombination channels, providing that the shallower charged centers capture more likely charge carriers of the same polarity than the deep neutral ones, in spite of columbic repulsion. A close algebraic condition guaranteeing this effect is given, involving the trap parameters of the recombination centers. Deep multiple recombination centers in germanium, silicon, and silicon carbide are identified whose trap parameters make those materials good candidates to the realization of optoelectronic switching devices based on this effect.

  3. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  4. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories. PMID:27005918

  5. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  6. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  7. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  8. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  9. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  10. Bio-inspired networks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Han, Bing; Huang, Yuanlin; Li, Ruopeng; Peng, Qiang; Luo, Junyi; Pei, Ke; Herczynski, Andrzej; Kempa, Krzysztof; Ren, Zhifeng; Gao, Jinwei

    2014-11-01

    Modern optoelectronics needs development of new materials characterized not only by high optical transparency and electrical conductivity, but also by mechanical strength, and flexibility. Recent advances employ grids of metallic micro- and nanowires, but the overall performance of the resulting material composites remains unsatisfactory. In this work, we propose a new strategy: application of natural scaffoldings perfected by evolution. In this context, we study two bio-inspired networks for two specific optoelectronic applications. The first network, intended for solar cells, light sources and similar devices, has a quasi-fractal structure and is derived directly from a chemically extracted leaf venation system. The second network is intended for touch screens and flexible displays, and is obtained by metalizing a spider’s silk web. We demonstrate that each of these networks attain an exceptional optoelectonic and mechanical performance for its intended purpose, providing a promising direction in the development of more efficient optoelectronic devices.

  11. Organics in optoelectronics: advances and roadmap

    NASA Astrophysics Data System (ADS)

    Eldada, Louay

    2006-02-01

    Over a four-year period from 2001 to 2005, the Microphotonics Center Industry Consortium at MIT evaluated the vast array of new technologies that have disrupted the telecommunications industry. As part of its mission, the consortium researched a variety of communications-related technical and business topics, presented recommendations for the rational restructuring of the industry, and developed a 30-year communications technology roadmap (CTR). The CTR program was guided by industry-led Technology Working Groups (TWGs), with the support of MIT faculty and students. We present the findings of the Organics in Optoelectronics TWG in terms of advances in organic-material based optoelectronic integrated circuits (OEICs), and we propose a roadmap for optoelectronic integration enabled by hybrid organic-inorganic OEICs.

  12. Optoelectronic Oscillator Based on Polarization Modulation

    NASA Astrophysics Data System (ADS)

    Pan, Shilong; Zhou, Pei; Tang, Zhenzhou; Zhang, Yamei; Zhang, Fangzheng; Zhu, Dan

    2015-07-01

    A polarization modulator together with a polarizer can implement phase modulation, intensity modulation with tunable chirp, and frequency-doubling intensity modulation. If an optical filter is incorporated, frequency-quadrupling and frequency-sextupling intensity modulations and a microwave photonic phase shifter can also be realized. By using a polarization modulator to replace the intensity modulator in an optoelectronic oscillator, various new features are enabled. In this article, an analytical model for the polarization modulator-based systems is established. The recent development in employing polarization modulators for constructing optoelectronic oscillators is discussed. The emerging applications enabled by the polarization modulator-based optoelectronic oscillators and the possible future development are also discussed.

  13. Cellular-level mass spectrometry imaging using infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) by oversampling.

    PubMed

    Nazari, Milad; Muddiman, David C

    2015-03-01

    Mass spectrometry imaging (MSI) allows for the direct and simultaneous analysis of the spatial distribution of molecular species from sample surfaces such as tissue sections. One of the goals of MSI is monitoring the distribution of compounds at the cellular resolution in order to gain insights about the biology that occurs at this spatial level. Infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) imaging of cervical tissue sections was performed using a spot-to-spot distance of 10 μm by utilizing the method of oversampling, where the target plate is moved by a distance that is less than the desorption radius of the laser. In addition to high spatial resolution, high mass accuracy (±1 ppm) and high mass resolving power (140,000 at m/z = 200) were achieved by coupling the IR-MALDESI imaging source to a hybrid quadrupole Orbitrap mass spectrometer. Ion maps of cholesterol in tissues were generated from voxels containing <1 cell, on average. Additionally, the challenges of imaging at the cellular level in terms of loss of sensitivity and longer analysis time are discussed. PMID:25486925

  14. Cellular Level Mass Spectrometry Imaging using Infrared Matrix Assisted Laser Desorption Electrospray Ionization (IR-MALDESI) by Oversampling

    PubMed Central

    Nazari, Milad; Muddiman, David C.

    2014-01-01

    Mass spectrometry imaging (MSI) allows for the direct and simultaneous analysis of the spatial distribution of molecular species from sample surfaces such as tissue sections. One of the goals of MSI is monitoring the distribution of compounds at the cellular resolution in order to gain insights about the biology that occurs at this spatial level. Infrared matrix-assisted laser desorption electrospray ionization (IR-MALDESI) imaging of cervical tissue sections was performed using a spot-to-spot distance of 10 μm by utilizing the method of oversampling; where the target plate is moved by a distance that is less than the desorption radius of the laser. In addition to high spatial resolution, high mass accuracy (± 1 ppm) and high mass resolving power (140,000 at m/z=200) was achieved by coupling the IR-MALDESI imaging source to a hybrid quadrupole Orbitrap mass spectrometer. Ion maps of cholesterol in tissues were generated from voxels containing <1 cell, on average. Additionally, the challenges of imaging at the cellular level in terms of loss of sensitivity and longer analysis time are discussed. PMID:25486925

  15. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  16. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  17. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  18. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  19. Using optoelectronic sensors in the system PROTEUS

    NASA Astrophysics Data System (ADS)

    Zyczkowski, M.; Szustakowski, M.; Ciurapinski, W.; Piszczek, M.

    2010-10-01

    The paper presents the concept of optoelectronic devices for human protection in rescue activity. The system consists of an ground robots with predicted sensor. The multisensor construction of the system ensures significant improvement of security of using on-situ like chemical or explosive sensors. The article show a various scenario of use for individual sensor in system PROTEUS.

  20. Silicon photomultiplier-based optoelectronic mixing

    NASA Astrophysics Data System (ADS)

    Yishuo, Song; Xiaoping, Du; Zhaoyang, Zeng; Shengjun, Wang

    2013-09-01

    Silicon photomultiplier (SiPM)-based optoelectronic mixing (OEM) is studied for the first time. The validity of SiPM-based OEM is experimentally verified. Compared with the avalanche photodiodes-based OEM, the SiPM-based OEM is less noisy and easy to realize for its low voltage operation and high responsivity.

  1. Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum

    ERIC Educational Resources Information Center

    Matin, M. A.

    2005-01-01

    The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…

  2. Optoelectronic Inner-Product Neural Associative Memory

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang

    1993-01-01

    Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

  3. Optoelectronic Systems Trained With Backpropagation Through Time.

    PubMed

    Hermans, Michiel; Dambre, Joni; Bienstman, Peter

    2015-07-01

    Delay-coupled optoelectronic systems form promising candidates to act as powerful information processing devices. In this brief, we consider such a system that has been studied before in the context of reservoir computing (RC). Instead of viewing the system as a random dynamical system, we see it as a true machine-learning model, which can be fully optimized. We use a recently introduced extension of backpropagation through time, an optimization algorithm originally designed for recurrent neural networks, and use it to let the network perform a difficult phoneme recognition task. We show that full optimization of all system parameters of delay-coupled optoelectronics systems yields a significant improvement over the previously applied RC approach. PMID:25137733

  4. Widely tunable opto-electronic oscillator

    NASA Astrophysics Data System (ADS)

    Maxin, J.; Pillet, G.; Morvan, L.; Dolfi, D.

    2012-03-01

    We present here a widely tunable opto-electronic oscillator (OEO) based on an Er,Yb:glass Dual Frequency Laser (DFL) at 1.53 μm. The beatnote is stabilized with an optical fiber delay line. Compared to classical optoelectronic oscillators, this architecture does not need RF filter and offers a wide tunability. We measured a reduction of 67 dB of the phase noise power spectral density (PSD) at 10 Hz of the carrier optical fiber leading to a level of -27 dBc/Hz with only 100 m optical fiber. Moreover, the scheme offers a microwave signal tunability from 2.5 to 5.5 GHz limited by the RF components.

  5. Optoelectronic memory using two-dimensional materials.

    PubMed

    Lei, Sidong; Wen, Fangfang; Li, Bo; Wang, Qizhong; Huang, Yihan; Gong, Yongji; He, Yongmin; Dong, Pei; Bellah, James; George, Antony; Ge, Liehui; Lou, Jun; Halas, Naomi J; Vajtai, Robert; Ajayan, Pulickel M

    2015-01-14

    An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage. PMID:25517502

  6. Technologies for highly parallel optoelectronic integrated circuits

    SciTech Connect

    Lear, K.L.

    1994-10-01

    While summarily reviewing the range of optoelectronic integrated circuits (OEICs), this paper emphasizes technology for highly parallel optical interconnections. Market volume and integration suitability considerations highlight board-to-board interconnects within systems as an initial insertion point for large OEIC production. The large channel count of these intrasystem interconnects necessitates two-dimensional laser transmitter and photoreceiver arrays. Surface normal optoelectronic components are promoted as a basis for OEICs in this application. An example system is discussed that uses vertical cavity surface emitting lasers for optical buses between layers of stacked multichip modules. Another potentially important application for highly parallel OEICs is optical routing or packet switching, and examples of such systems based on smart pixels are presented.

  7. Optoelectronic Ranging Sensor For Robotic Vehicle

    NASA Technical Reports Server (NTRS)

    Wilcox, Brian H.

    1991-01-01

    Proposed optoelectronic ranging system for robotic vehicle provides information on distances to points in natural scene by use of pinhole mask to sample texture in scene and determines whether portion of scene corresponds to each pinhole in focus (whether it lies at focal distance). System has no moving parts, requires little computation, and consumes only few watts of power. Passive in sense that it does not include any artificial sources of light, relying instead on sunlight reflected from scene.

  8. Optoelectronic Instruments For Analysis Of Surface Defects

    NASA Technical Reports Server (NTRS)

    Collins, J. David; Mueller, Robert P.; Davis, Richard M.; Gleman, Stuart M.; Hallberg, Carl G.; Thayer, Stephen W.; Thompson, David L.; Thompson, James E.

    1995-01-01

    Family of portable optoelectronic instruments developed to facilitate inspection of surface flaws like gouges, scratches, raised metal, and dents on large metal workpieces subject to surface-finish requirements. Instrument brought to workpiece and semiautomatically makes electronic record of three-dimensional shape of flaw. Entire inspection process takes only minutes. Prototype instrument includes structured-light microscope. Concept involves projection of known pattern of light onto surface inspected. Topography of surface determined from distortion of pattern as viewed through instrument.

  9. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    SciTech Connect

    Huang, Bing; Yoon, Mina; Smith, Sean C; Wei, Su-Huai; Deng, Hui-Xiong; Liu, Feng; Lee, Hoonkyung; Sumpter, Bobby G

    2014-01-01

    Silicon is arguably the best electronic material, but not as good an optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable bandgap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) bandgaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) bandgaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  10. New bridged oligofuran for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Tibaoui, T.; Ayachi, S.; Chemek, M.; Alimi, K.

    2015-05-01

    Based on density functional theory (DFT) calculations, we have investigated the structural and optoelectronic properties of oligofuran (OFu)-bridged systems via useful electron donating groups (>S, >CH2, >SiH2 and >NH) and electron accepting ones (>Cdbnd C(CN)2, >Cdbnd O, >Cdbnd S and >Cdbnd CH2). The results were then discussed and compared with those obtained with the corresponding unbridged form. It was found that the optical band gap of OFu decreases significantly when it is bridged by >NH group arranged through an alternating way with >Cdbnd S or >Cdbnd C(CN)2 group, which gives bridged polyfuran (PFu) with desirable opto-electronic properties. Further, an intra-molecular charge transfer for the systems was undertaken in support of time-dependent DFT (TD-DFT) and semi-empirical ZINDO calculations. In this frame, we have shown that >Cdbnd C(CN)2 and >S bridging groups leads to a new oligomer possessing favorable optoelectronic parameter for its use as an active layer in organic photovoltaic cells.

  11. New bridged oligofuran for optoelectronic applications.

    PubMed

    Tibaoui, T; Ayachi, S; Chemek, M; Alimi, K

    2015-05-01

    Based on density functional theory (DFT) calculations, we have investigated the structural and optoelectronic properties of oligofuran (OFu)-bridged systems via useful electron donating groups (>S, >CH2, >SiH2 and >NH) and electron accepting ones (>CC(CN)2, >CO, >CS and >CCH2). The results were then discussed and compared with those obtained with the correspondingunbridged form. It was found that the optical band gap of OFu decreases significantly when it is bridged by >NH group arranged through an alternating way with >CS or >CC(CN)2 group, which gives bridged polyfuran (PFu) with desirable opto-electronic properties. Further, an intra-molecular charge transfer for the systems was undertaken in support of time-dependent DFT (TD-DFT) and semi-empirical ZINDO calculations. In this frame, we have shown that >CC(CN)2 and >S bridging groups leads to a new oligomer possessing favorable optoelectronic parameter for its use as an active layer in organic photovoltaic cells. PMID:25698440

  12. Analog/Digital System for Germanium Thermometer

    NASA Technical Reports Server (NTRS)

    Woodhouse, Christopher

    1988-01-01

    Electronic system containing analog and digital circuits makes high-precision, four-wire measurements of resistance of each germanium resistance thermometer (GRT) in array of devices, using alternating current (ac) of 1 micro-A. At end measurement interval, contents of negative register subtracted from positive one, resulting in very-narrow-band synchronous demodulation of carrier wave and suppression of out-of-band noise. Microprocessor free to perform other duties after measurement complete. Useful in noisy terrestrial environments encountered in factories.

  13. Hybrid analog-digital associative neural network

    NASA Technical Reports Server (NTRS)

    Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1989-01-01

    Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of said second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier.

  14. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    PubMed

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc. PMID:26736442

  15. Shallow halogen vacancies in halide optoelectronic materials

    DOE PAGESBeta

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VHmore » is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.« less

  16. Shallow halogen vacancies in halide optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Du, Mao-Hua

    2014-11-01

    Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  17. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  18. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  19. Optoelectronic Receiver For Communication And Control

    NASA Technical Reports Server (NTRS)

    Kunath, Richard; Bendett, Mark; Mactaggart, I. Ross

    1994-01-01

    Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

  20. Visualizing Optoelectronic Processes at the Nanoscale.

    PubMed

    Mishra, Puneet; Komeda, Tadahiro

    2015-11-24

    In this issue of ACS Nano, Nienhaus et al. report the optoelectronic properties of carbon nanotube chiral junctions with nanometer resolution in the presence of strong electric fields (∼1 V/nm). Here, we provide an overview of recent studies that combine scanning tunneling microscope (STM) and laser or microwave illumination. These techniques reveal nanoscale laser- or microwave-induced phenomena utilizing the intrinsic atomic resolution of the tunneling current, and do not require substantial modification of the STM itself. The merits of atomic-scale spatial resolution and chemical sensitivity of the laser or microwave spectroscopes make these techniques useful for nanoscale characterization. PMID:26524228

  1. In-situ nanochemistry for optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Won Jin

    This thesis describes recent results on simple methods to arrange nanosize objects such as semiconductor nanocrystals, noble metal nanoparticles, and upconversion nanophosphors by means of top-down processes. Specific focus is directed towards approaches to produce predefined patterns of various nanostructure materials using optical lithography for direct writing of films for optoelectronic and electronic devices. To obtain photo-patternability, the nanostructure materials [for example semiconductor nanocrystals (CdSe, CdTe, PbSe), metallic nanoparticles (Ag), upconversion nanophosphors (Er3+/Yb 3+ or Tm3+/Yb3+ co-doped NaYF4 ), and transparent conducting oxide nanoparticles (ITO, ZnO)] were functionalized by incorporation of the functional ligand t-butoxycarbonyl (t-BOC) which has an acid-labile moiety. The t-BOC group undergoes a cleavage, when subjected to UV irradiation in the presence of a photo acid generator (PAG) to releases isobutene and carbon dioxide. Depending on the need of the application, either the exposed regions (negative pattern) or the non-exposed regions (positive pattern) could be developed from the exposed films by appropriate solvent selection. The photo exposed regions of the film are rendered hydrophilic due to the degradation of the t-BOC, the un-exposed regions remain hydrophobic. This solubility change in the QDs is the basis of their patternablity. The un-exposed regions can be removed to obtain the negative pattern by washing with hydrophobic solvents, whereas the exposed regions can be selectively removed to obtain positive pattern by washing with hydrophilic solvents. This change in the surface chemistry results in the ability to photo-pattern the various nanostructure materials where desired for a number of optoelectronic device geometries. We demonstrate that the ultimate resolution (linewidth and spacing) of this technique is below submicron. Details on technological aspects concerning nanoparticle patterning as well as practical

  2. Focused Ion Beam Technology for Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Reithmaier, J. P.; Bach, L.; Forchel, A.

    2003-08-01

    High-resolution proximity free lithography was developed using InP as anorganic resist for ion beam exposure. InP is very sensitive on ion beam irradiation and show a highly nonlinear dose dependence with a contrast function comparable to organic electron beam resists. In combination with implantation induced quantum well intermixing this new lithographic technique based on focused ion beams is used to realize high performance nano patterned optoelectronic devices like complex coupled distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers.

  3. Broadband Chaos Generated by an Optoelectronic Oscillator

    NASA Astrophysics Data System (ADS)

    Callan, Kristine E.; Illing, Lucas; Gao, Zheng; Gauthier, Daniel J.; Schöll, Eckehard

    2010-03-01

    We study an optoelectronic time-delay oscillator that displays high-speed chaotic behavior with a flat, broad power spectrum. The chaotic state coexists with a linearly stable fixed point, which, when subjected to a finite-amplitude perturbation, loses stability initially via a periodic train of ultrafast pulses. We derive approximate mappings that do an excellent job of capturing the observed instability. The oscillator provides a simple device for fundamental studies of time-delay dynamical systems and can be used as a building block for ultrawide-band sensor networks.

  4. Optoelectronic image processing for cervical cancer screening

    NASA Astrophysics Data System (ADS)

    Narayanswamy, Ramkumar; Sharpe, John P.; Johnson, Kristina M.

    1994-05-01

    Automation of the Pap-smear cervical screening method is highly desirable as it relieves tedium for the human operators, reduces cost and should increase accuracy and provide repeatability. We present here the design for a high-throughput optoelectronic system which forms the first stage of a two stage system to automate pap-smear screening. We use a mathematical morphological technique called the hit-or-miss transform to identify the suspicious areas on a pap-smear slide. This algorithm is implemented using a VanderLugt architecture and a time-sequential ANDing smart pixel array.

  5. Optoelectronic pH Meter: Further Details

    NASA Technical Reports Server (NTRS)

    Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

    2009-01-01

    A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

  6. Optoelectronic inventory system for special nuclear material

    SciTech Connect

    Sieradzki, F.H.

    1994-01-01

    In support of the Department of Energy`s Dismantlement Program, the Optoelectronics Characterization and Sensor Development Department 2231 at Sandia National Laboratories/New Mexico has developed an in situ nonintrusive Optoelectronic Inventory System (OIS) that has the potential for application wherever periodic inventory of selected material is desired. Using a network of fiber-optic links, the OIS retrieves and stores inventory signatures from data storage devices (which are permanently attached to material storage containers) while inherently providing electromagnetic pulse immunity and electrical noise isolation. Photovoltaic cells (located within the storage facility) convert laser diode optic power from a laser driver to electrical energy. When powered and triggered, the data storage devices sequentially output their digital inventory signatures through light-emitting diode/photo diode data links for retrieval and storage in a mobile data acquisition system. An item`s exact location is determined through fiber-optic network and software design. The OIS provides an on-demand method for obtaining acceptable inventory reports while eliminating the need for human presence inside the material storage facility. By using modularization and prefabricated construction with mature technologies and components, an OIS installation with virtually unlimited capacity can be tailored to the customer`s requirements.

  7. Terahertz Optoelectronics with Surface Plasmon Polariton Diode

    PubMed Central

    Vinnakota, Raj K.; Genov, Dentcho A.

    2014-01-01

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics. PMID:24811083

  8. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-01-01

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics. PMID:24811083

  9. Optical thin film metrology for optoelectronics

    NASA Astrophysics Data System (ADS)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  10. Pole movement in electronic and optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Chatterjee, S.; Pal, S.; Biswas, B. N.

    2013-12-01

    An RLC circuit with poles on the left half of the complex frequency plane is capable of executing transient oscillations. During this period, energy conversion from potential to kinetic and from kinetic to potential continuously goes on, until the stored energy is lost in dissipation through the resistance. On the other hand, in an electronic or opto-electronic oscillator with an embedded RLC circuit, the poles are forcibly placed on the right-half plane (RHP) and as far as practicable away from the imaginary axis in order to help the growth of oscillation as quickly as possible. And ultimately, it is imagined that, like the case of an ideal linear harmonic oscillator, the poles are frozen on the imaginary axis so that the oscillation neither grows nor decays. The authors feel that this act of holding the poles right on the imaginary axis is a theoretical conjecture in a soft or hard self-excited oscillator. In this article, a detailed discussion on pole movement in an electronic and opto-electronic oscillator is carried out from the basic concept. A new analytical method for estimating the time-dependent part of the pole is introduced here.

  11. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  12. Optoelectronic hit/miss transform for screening cervical smear slides

    NASA Astrophysics Data System (ADS)

    Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

    1995-06-01

    An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

  13. Optoelectronic determination of insect presence in fruit

    NASA Astrophysics Data System (ADS)

    Shrestha, Bim P.; Guyer, Daniel E.; Ariana, Diwan P.

    2004-03-01

    Opto-electronic methods represent a potential to identify the presence of insect activities on or within agricultural commodities. Such measurements may detect actual insect presence or indirect secondary changes in the product resulting from past or present insect activities. Preliminary imaging studies have demonstrated some unique spectral characteristics of insect larvae on cherries. A detailed study on spectral characteristics of healthy and infested tart cherry tissue with and without larvae (Plum Curculio) was conducted for reflectance, transmittance and interactance modes for each of UV and visible/NIR light sources. The intensity of transmitted UV signals through the tart cherry was found to be weak; however, the spectral properties of UV light in reflectance mode has revealed some typical characteristics of larvae on healthy and infested tissue. The larvae on tissue were found to exhibit UV induced fluorescence signals in the range of 400-700 nm. Multi spectral imaging of the halved tart cherry has also corroborated this particular behavior of plum curculio larvae. The gray scale subtraction between corresponding pixels in these multi-spectral images has helped to locate the larvae precisely on the tart cherry tissue background, which otherwise was inseparable. The spectral characteristics of visible/NIR energy in transmittance and reflectance mode are capable of estimating the secondary effect of infestation in tart cherry tissue. The study has shown the shifting in peaks of reflected and transmitted signals from healthy and infested tissues and coincides with the concept of browning of tissue at cell level as a process of infestation. Interactance study has been carried out to study the possibility of coupling opto-electronic devices with the existing pitting process. The shifting of peaks has been observed for the normalized intensity of healthy and infested tissues. The study has been able to establish the inherent spectral characteristic of these

  14. Shallow halogen vacancies in halide optoelectronic materials

    SciTech Connect

    Shi, Hongliang; Du, Mao -Hua

    2014-11-05

    Halogen vacancies (VH) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH3NH3PbI3 and TlBr. Both CH3NH3PbI3 and TlBr have been found to have shallow VH, in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., CH3NH3PbI3, CH3NH3SnI3 (photovoltaic materials), TlBr, and CsPbBr3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns2 ions both play important roles in creating shallow VH in halides such as CH3NH3PbI3, CH3NH3SnI3, and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

  15. 77 FR 65713 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-30

    ... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products... the United States after importation of certain optoelectronic devices for fiber optic communications... importation of certain optoelectronic devices for fiber optic communications, components thereof, and...

  16. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  17. Novel Oversampling Technique for Improving Signal-to-Quantization Noise Ratio on Accelerometer-Based Smart Jerk Sensors in CNC Applications

    PubMed Central

    Rangel-Magdaleno, Jose J.; Romero-Troncoso, Rene J.; Osornio-Rios, Roque A.; Cabal-Yepez, Eduardo

    2009-01-01

    Jerk monitoring, defined as the first derivative of acceleration, has become a major issue in computerized numeric controlled (CNC) machines. Several works highlight the necessity of measuring jerk in a reliable way for improving production processes. Nowadays, the computation of jerk is done by finite differences of the acceleration signal, computed at the Nyquist rate, which leads to low signal-to-quantization noise ratio (SQNR) during the estimation. The novelty of this work is the development of a smart sensor for jerk monitoring from a standard accelerometer, which has improved SQNR. The proposal is based on oversampling techniques that give a better estimation of jerk than that produced by a Nyquist-rate differentiator. Simulations and experimental results are presented to show the overall methodology performance. PMID:22412337

  18. Anthropogenic emissions of highly reactive volatile organic compounds in eastern Texas inferred from oversampling of satellite (OMI) measurements of HCHO columns

    NASA Astrophysics Data System (ADS)

    Zhu, Lei; Jacob, Daniel J.; Mickley, Loretta J.; Marais, Eloïse A.; Cohan, Daniel S.; Yoshida, Yasuko; Duncan, Bryan N.; González Abad, Gonzalo; Chance, Kelly V.

    2014-11-01

    Satellite observations of formaldehyde (HCHO) columns provide top-down constraints on emissions of highly reactive volatile organic compounds (HRVOCs). This approach has been used previously in the US to estimate isoprene emissions from vegetation, but application to anthropogenic emissions has been stymied by lack of a discernable HCHO signal. Here we show that temporal oversampling of HCHO data from the Ozone Monitoring Instrument (OMI) for 2005-2008 enables detection of urban and industrial plumes in eastern Texas including Houston, Port Arthur, and Dallas/Fort Worth. By spatially integrating the HCHO enhancement in the Houston plume observed by OMI we estimate an anthropogenic HCHO source of 250 ± 140 kmol h-1. This implies that anthropogenic HRVOC emissions in Houston are 4.8 ± 2.7 times higher than reported by the US Environmental Protection Agency inventory, and is consistent with field studies identifying large ethene and propene emissions from petrochemical industrial sources.

  19. Integrated NEMS and optoelectronics for sensor applications.

    SciTech Connect

    Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R.; Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade; Okandan, Murat; Peterson, Kenneth Allen

    2008-01-01

    This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

  20. Remote optoelectronic sensors for monitoring of nonlinear surfaces

    NASA Astrophysics Data System (ADS)

    Petrochenko, Andrew V.; Konyakhin, Igor A.

    2015-05-01

    Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.

  1. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    DOE PAGESBeta

    Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

    2016-03-29

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns2 ions (e.g., Tl+, Pb2+, and Bi3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi3+, which is also an ns2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of bandmore » gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that

  2. Organic Optoelectronic Devices Employing Small Molecules

    NASA Astrophysics Data System (ADS)

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  3. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  4. Bismuth chalcohalides and oxyhalides as optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Shi, Hongliang; Ming, Wenmei; Du, Mao-Hua

    2016-03-01

    Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of n s2 ions (e.g., T l+ , P b2 + , and B i3 + ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain B i3 + , which is also an n s2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected B i3 + based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n -BiSeBr, p -BiSI, and p -BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p -type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. Defect calculations indeed show that the

  5. Magnetometer Based on Optoelectronic Microwave Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Strekalov, Dmitry; Matsko, Andrey

    2005-01-01

    proposed instrument, intended mainly for use as a magnetometer, would include an optoelectronic oscillator (OEO) stabilized by an atomic cell that could play the role of a magnetically tunable microwave filter. The microwave frequency would vary with the magnetic field in the cell, thereby providing an indication of the magnetic field. The proposed magnetometer would offer a combination of high accuracy and high sensitivity, characterized by flux densities of less than a picotesla. In comparison with prior magnetometers, the proposed magnetometer could, in principle, be constructed as a compact, lightweight instrument: It could fit into a package of about 10 by 10 by 10 cm and would have a mass <0.5 kg. As described in several prior NASA Tech Briefs articles, an OEO is a hybrid of photonic and electronic components that generates highly spectrally pure microwave radiation, and optical radiation modulated by the microwave radiation, through direct conversion between laser light and microwave radiation in an optoelectronic feedback loop. As used here, "atomic cell" signifies a cell containing a vapor, the constituent atoms of which can be made to undergo transitions between quantum states, denoted hyperfine levels, when excited by light in a suitable wavelength range. The laser light must be in this range. The energy difference between the hyperfine levels defines the microwave frequency. In the proposed instrument (see figure), light from a laser would be introduced into an electro-optical modulator (EOM). Amplitude-modulated light from the exit port of the EOM would pass through a fiber-optic splitter having two output branches. The light in one branch would be sent through an atomic cell to a photodiode. The light in the other branch would constitute the microwave-modulated optical output. Part of the light leaving the atomic cell could also be used to stabilize the laser at a frequency in the vicinity of the desired hyperfine or other quantum transition. The

  6. Emissive polymeric materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Chichak, Kelly Scott; Cella, James Anthony; Lewis, Larry Neil; Janora, Kevin Henry

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  7. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott; Lewis, Larry Neil; Cella, James Anthony; Shiang, Joseph John

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  8. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  9. A silicon microbench concept for optoelectronic packaging

    SciTech Connect

    Pocha, M.D.; Strand, O.T.; Kerns, J.A.

    1996-06-24

    Optoelectronics (o/e) is currently too expensive for widespread application. We believe that the packaging (or fiber pigtailing) process must be automated to realize a significant reduction in the cost of o.e packages. We are addressing issues of automating the fiber pigtailing process on silicon waferboards or microbenches. This paper focuses on reflowing solders for the attachment of o/e components. We have recently developed miniature polysilicon heaters which are integrated on silicon microbenches. These miniature heaters avoid the problem of raising the entire microbench to the solder melting point to attach components. Most importantly, these miniature heaters are completely compatible with automating the attachment process. Designing silicon microbenches with on-board heaters requires some care. The thermal properties of the microbench itself along with all coatings and any heatsinking materials must be understood. The heaters must operate in a current and voltage regime compatible with the overall characteristics of the o.e package. Inadvertently reflowing solder in unanticipated locations may occur unless the thermal behavior of the microbench thoroughly known. This paper describes the design and fabrication of our microbenches and an experimental and theoretical study on these silicon microbenches which gives a complete picture of their thermal behavior.

  10. Assessment of dental plaque by optoelectronic methods

    NASA Astrophysics Data System (ADS)

    Negrutiu, Meda-Lavinia; Sinescu, Cosmin; Bortun, Cristina Maria; Levai, Mihaela-Codrina; Topala, Florin Ionel; Crǎciunescu, Emanuela Lidia; Cojocariu, Andreea Codruta; Duma, Virgil Florin; Podoleanu, Adrian Gh.

    2016-03-01

    The formation of dental biofilm follows specific mechanisms of initial colonization on the surface, microcolony formation, development of organized three dimensional community structures, and detachment from the surface. The structure of the plaque biofilm might restrict the penetration of antimicrobial agents, while bacteria on a surface grow slowly and display a novel phenotype; the consequence of the latter is a reduced sensitivity to inhibitors. The aim of this study was to evaluate with different optoelectronic methods the morphological characteristics of the dental biofilm. The study was performed on samples from 25 patients aged between 18 and 35 years. The methods used in this study were Spectral Domain Optical Coherence Tomography (SD-OCT) working at 870 nm for in vivo evaluations and Scanning Electron Microscopy (SEM) for validations. For each patient a sample of dental biofilm was obtained directly from the vestibular surface of the teeth's. SD-OCT produced C- and B-scans that were used to generate three dimensional (3D) reconstructions of the sample. The results were compared with SEM evaluations. The biofilm network was dramatically destroyed after the professional dental cleaning. OCT noninvasive methods can act as a valuable tool for the 3D characterization of dental biofilms.

  11. Superenhancers: Novel opportunities for nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Khudiyev, Tural; Bayindir, Mehmet

    2014-12-01

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems.

  12. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  13. Optoelectronic devices incorporating fluoropolymer compositions for protection

    DOEpatents

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  14. Towards optoelectronic architectures for integrated neuromorphic computers

    NASA Astrophysics Data System (ADS)

    Martinenghi, Romain; Baylon Fuentes, Antonio; Jacquot, Maxime; Chembo, Yanne K.; Larger, Laurent

    2014-03-01

    We investigate theoretically and experimentally the computational properties of an optoelectronic neuromorphic processor based on a complex nonlinear dynamics. This neuromorphic approach is based on a new paradigm of or reservoir computing, which is intrinsically different from the concept of Turing machines. It essentially consists in expanding the input information to be processed into a higher dimensional phase space, through the nonlinear transient response of a complex dynamics excited by the input information. The computed output is then extracted via a linear separation of the transient trajectory in the complex phase space, performed through a learning phase consisting of the resolution of a regression problem. We here investigate an architecture for photonic neuromorphic computing via these complex nonlinear dynamical transients. A versatile photonic nonlinear transient computer based on a multiple-delay is reported. Its hybrid analogue and digital architecture allows for an easy reconfiguration, and for direct implementation of in-line processing. Its computational efficiency in parameter space is also analyzed, and the computational performance of this system is successfully evaluated on a standard spoken digit recognition task. We then discuss the pathways that can lead to its effective integration.

  15. Image stabilization for SWIR advanced optoelectronic device

    NASA Astrophysics Data System (ADS)

    Schiopu, Paul; Manea, Adrian; Cristea, Ionica; Grosu, Neculai; Craciun, Anca-Ileana; Craciun, Alexandru; Granciu, Dana

    2015-02-01

    At long ranges and under low visibility conditions, Advanced Optoelectronic Device provides the signal-to-noise ratio and image quality in the Short-wave Infra-red - SWIR (wavelengths between 1,1 ÷2,5 μm), significantly better than in the near wave infrared - NWIR and visible spectral bands [1,2]. The quality of image is nearly independent of the polarization in the incoming light, but it is influenced by the relative movement between the optical system and the observer (the operators' handshake), and the movement towards the support system (land and air vehicles). All these make it difficult to detect objectives observation in real time. This paper presents some systems enhance which the ability of observation and sighting through the optical systems without the use of the stands, tripods or other means. We have to eliminate the effect of "tremors of the hands" and the vibration in order to allow the use of optical devices by operators on the moving vehicles on land, on aircraft, or on boats, and to provide additional comfort for the user to track the moving object through the optical system, without losing the control in the process of detection and tracking. The practical applications of stabilization image process, in SWIR, are the most advanced part of the optical observation systems available worldwide [3,4,5]. This application has a didactic nature, because it ensures understanding by the students about image stabilization and their participation in research.

  16. Admin interface of Optoelectronics Research Center

    NASA Astrophysics Data System (ADS)

    Nicolae, Popescu R.; Schiopu, Paul

    2007-05-01

    The scope of the Optoelectronics Research Center website is to provide useful information about the center such as: member's cv, projects, conferences, as well as many other related information's. Based upon a worldwide study a visitor pay attention to a website for about 50-60 seconds, in this time he(she) is searching the website pages for the desired information, if the information it's found in this period the visitor will be pleased, if not he will look the information on other websites. For the CCO website a user-friendly environment has been designed, this interface has been severely tested, the results matching the 50-60 seconds time. In more than 80% of the cases the webmasters are not the same with the webdesigners; this is the point where the problems frequently occur. The content of a website has to be updated in order for visitors to get the proper information's, and not to be misled. To overcome this problem an administrator interface has been constructed. Using the admin interface the webmaster will easily update the whole website with only few clicks of a button, without need to know anything about programming or webdesign.

  17. Colloidal quantum dot materials for infrared optoelectronics

    NASA Astrophysics Data System (ADS)

    Arinze, Ebuka S.; Nyirjesy, Gabrielle; Cheng, Yan; Palmquist, Nathan; Thon, Susanna M.

    2015-09-01

    Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Specifically, the bandgap of films composed of arrays of CQDs can be tuned via the quantum confinement effect for tailored spectral utilization. PbS-based CQDs can be tuned throughout the near and mid-infrared wavelengths and are a promising materials system for photovoltaic devices that harvest non-visible solar radiation. The performance of CQD solar cells is currently limited by an absorption-extraction compromise, whereby photon absorption lengths in the near infrared spectral regime exceed minority carrier diffusion lengths in the bulk films. Several light trapping strategies for overcoming this compromise and increasing the efficiency of infrared energy harvesting will be reviewed. A thin-film interference technique for creating multi-colored and transparent solar cells will be presented, and a discussion of designing plasmonic nanomaterials based on earth-abundant materials for integration into CQD solar cells is developed. The results indicate that it should be possible to achieve high absorption and color-tunability in a scalable nanomaterials system.

  18. Superenhancers: Novel opportunities for nanowire optoelectronics

    PubMed Central

    Khudiyev, Tural; Bayindir, Mehmet

    2014-01-01

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems. PMID:25511865

  19. Optical and optoelectronic properties of organic nanomaterials

    NASA Astrophysics Data System (ADS)

    Satapathi, Soumitra

    In this dissertation research, organic nanomaterials, such as semiconducting polymer nanoparticles, graphene nanosheets and organic small molecules were successfully utilized for fabrication of organic solar cells, optical sensors and for high contrast imaging of cancer cells. Semiconducting polymer nanoparticles were synthesized by a simple miniemulsion technique. These size controllable polymeric nanoparticles were proven to be able to optimize the morphologies of the bulk heterojunction solar cells and to provide fundamental insight into the evolution of the nanostructures. Highly sensitive optical sensors were fabricated using these polymeric nanoparticles for efficient detection of nitroaromatic explosives, such as 2,4 dinitrotoluene (DNT) and 2,4,6 trinitrotoluene (TNT) in aqueous medium as well as in vapor the phase. Moreover, these water dispersible and fluorescent polymer nanodots were two-photon active and could be internalized by tumor cells as demonstrated by two-photon confocal imaging. In addition to the polymer nanoparticles, the role of the graphene nanosheets in the performance enhancement of dye sensitized solar cells was also investigated. The use of organic small molecules for optical sensing of different nerve gas agents and their potential use in multiphoton imaging of cancer cells were discussed. Controlling material properties at nanoscale for optoelectronics and imaging application as discussed in this dissertation would provide new dimensions in the areas of applied physics and materials science researches.

  20. Recent progress in opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute

    2005-01-01

    The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

  1. Hybrid optoelectronic device with multiple bistable outputs

    NASA Astrophysics Data System (ADS)

    Costazo-Caso, Pablo A.; Jin, Yiye; Gelh, Michael; Granieri, Sergio; Siahmakoun, Azad

    2011-01-01

    Optoelectronic circuits which exhibit optical and electrical bistability with hysteresis behavior are proposed and experimentally demonstrated. The systems are based on semiconductor optical amplifiers (SOA), bipolar junction transistors (BJT), PIN photodiodes (PD) and laser diodes externally modulated with integrated electro-absorption modulators (LD-EAM). The device operates based on two independent phenomena leading to both electrical bistability and optical bistability. The electrical bistability is due to the series connection of two p-i-n structures (SOA, BJT, PD or LD) in reverse bias. The optical bistability is consequence of the quantum confined Stark effect (QCSE) in the multi-quantum well (MQW) structure in the intrinsic region of the device. This effect produces the optical modulation of the transmitted light through the SOA (or reflected from the PD). Finally, because the optical transmission of the SOA (in reverse bias) and the reflected light from the PD are so small, a LD-EAM modulated by the voltage across these devices are employed to obtain a higher output optical power. Experiments show that the maximum switching frequency is in MHz range and the rise/fall times lower than 1 us. The temporal response is mainly limited by the electrical capacitance of the devices and the parasitic inductances of the connecting wires. The effects of these components can be reduced in current integration technologies.

  2. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu; Li, Wenguang; Jiang, Hua

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  3. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2012-02-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  4. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2011-11-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  5. Optoelectronic System Measures Distances to Multiple Targets

    NASA Technical Reports Server (NTRS)

    Liebe, Carl Christian; Abramovici, Alexander; Bartman, Randall; Chapsky, Jacob; Schmalz, John; Coste, Keith; Litty, Edward; Lam, Raymond; Jerebets, Sergei

    2007-01-01

    An optoelectronic metrology apparatus now at the laboratory-prototype stage of development is intended to repeatedly determine distances of as much as several hundred meters, at submillimeter accuracy, to multiple targets in rapid succession. The underlying concept of optoelectronic apparatuses that can measure distances to targets is not new; such apparatuses are commonly used in general surveying and machining. However, until now such apparatuses have been, variously, constrained to (1) a single target or (2) multiple targets with a low update rate and a requirement for some a priori knowledge of target geometry. When fully developed, the present apparatus would enable measurement of distances to more than 50 targets at an update rate greater than 10 Hz, without a requirement for a priori knowledge of target geometry. The apparatus (see figure) includes a laser ranging unit (LRU) that includes an electronic camera (photo receiver), the field of view of which contains all relevant targets. Each target, mounted at a fiducial position on an object of interest, consists of a small lens at the output end of an optical fiber that extends from the object of interest back to the LRU. For each target and its optical fiber, there is a dedicated laser that is used to illuminate the target via the optical fiber. The targets are illuminated, one at a time, with laser light that is modulated at a frequency of 10.01 MHz. The modulated laser light is emitted by the target, from where it returns to the camera (photodetector), where it is detected. Both the outgoing and incoming 10.01-MHz laser signals are mixed with a 10-MHz local-oscillator to obtain beat notes at 10 kHz, and the difference between the phases of the beat notes is measured by a phase meter. This phase difference serves as a measure of the total length of the path traveled by light going out through the optical fiber and returning to the camera (photodetector) through free space. Because the portion of the path

  6. Toward high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Huie, Philip; Vankov, Alexander; Asher, Alon; Baccus, Steven

    2005-04-01

    It has been already demonstrated that electrical stimulation of retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. Current retinal implants provide very low resolution (just a few electrodes), while several thousand pixels are required for functional restoration of sight. We present a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array with pixel density up to 2,500 pix/mm2 (geometrically corresponding to a visual acuity of 20/80), and allows for natural eye scanning rather than scanning with a head-mounted camera. The system operates similarly to "virtual reality" imaging devices used in military and medical applications. An image from a video camera is projected by a goggle-mounted infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. Such a system provides a broad field of vision by allowing for natural eye scanning. The goggles are transparent to visible light, thus allowing for simultaneous utilization of remaining natural vision along with prosthetic stimulation. Optical control of the implant allows for simple adjustment of image processing algorithms and for learning. A major prerequisite for high resolution stimulation is the proximity of neural cells to the stimulation sites. This can be achieved with sub-retinal implants constructed in a manner that directs migration of retinal cells to target areas. Two basic implant geometries are described: perforated membranes and protruding electrode arrays. Possibility of the tactile neural stimulation is also examined.

  7. Optoelectronic device applications of high [Tc] superconductors

    SciTech Connect

    Shi, Lei.

    1993-01-01

    Material processing and optoelectronic device applications of high T[sub c] materials are the main topic of this work. This dissertation is organized into three parts. Part I describes the material processing aspects of the HTSCs, YBCO thin films in particular. Pulsed laser deposition and device fabrication processes of high T[sub c] superconducting thin films are studied. 1/f noise measurement of HTSC thin films is also discussed. The deposition of CdS thin films onto YBCO superconducting films are studied. It is the author's effort to hybridize the semiconductor technology into HTSCs. High quality CdS/YBCO heterostructure is obtained. Part II concentrates on the construction of a femtosecond dye laser system and on the introduction of the femtosecond laser spectroscopy. Femtosecond colliding pulse mode-locking (CPM) dye laser has been built and is used to study the femtosecond transient reflectivity of high T[sub c] YBCO thin films and n-type GaAs samples. Part III describes in full detail both theory and experimental results of the optical response measurements on ultrathin YBCO thin films. Several important topics such as thermal diffusion, thermal boundary resistance and optical response in YBCO thin films are addressed. Single laser pulse duractions of 400 ps, 40 ps and 500 fs and a 40 ps pulse train are used in the experiments. A Double-bridge Voltage Correlation Technique is proposed and applied to measure the superconductivity recovery time in ultrathin YBCO films. Ultrafast voltage pulses faster than 40 ps are generated. A quasiparticle generation and recombination mechanism is further supported by two experimental evidences: (1) thickness dependence of the superconductivity recovery time; (2) the relaxation time scale <40ps.

  8. Nanocrystal Optoelectronic Devices in Plasmonic Nanojunctions

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth Mellinger

    Optical trapping is an important tool for studying and manipulating nanoscale objects. Recent experiments have shown that subwavelength control of nanoparticles is possible by using patterned plasmonic nanostructures, rather than using a laser directly, to generate the electric fields necessary for particle trapping. In this thesis we present a theoretical model and experimental evidence for plasmonic optical trapping in nanoscale metal junctions. Further, we examine the use of the resultant devices as ultrasmall photodectors. Electromigrated nanojunctions, or "nanogaps", have a well-established plasmon resonance in the near-IR, leading to electric field enhancements large enough for single-molecule sensitivity in Surface-Enhance Raman (SERS) measurements. While molecule-based devices have been carefully studied, optically and electrically prob- ing individual quantum dots in nanoscale metal junctions remains relatively unex- plored. Plasmon-based optical trapping of quantum dots into prefabricated struc- tures could allow for inexpensive, scalable luminescent devices which are fully integrable into established silicon-based fabrication techniques. Additionally, these metal-nanocrystal-metal structures are ideal candidates to study optoelectronics in ultrasmall nanocrystals-based structures, as well as more exotic nanoscale phenom- ena such as blinking, plasmon-exciton interactions, and surface-enhanced fluorescence (SEF). We present experimental data supporting plasmon-based optical trapping in the nanogap geometry, and a corresponding numerical model of the electric field-generated forces in the nanogap geometry. Further, we give proof-of-concept measurements of photoconductance in the resultant quantum dot-based devices, as well as challenges and improvements moving forward.

  9. Optoelectronic properties of hexagonal boron nitride epilayers

    NASA Astrophysics Data System (ADS)

    Cao, X. K.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2013-01-01

    This paper summarizes recent progress primarily achieved in authors' laboratory on synthesizing hexagonal boron nitride (hBN) epilayers by metal organic chemical vapor deposition (MCVD) and studies of their structural and optoelectronic properties. The structural and optical properties of hBN epilayers have been characterized by x-ray diffraction (XRD) and photoluminescence (PL) studies and compared to the better understood wurtzite AIN epilayers with a comparable energy bandgap. These MOCVD grown hBN epilayers exhibit highly efficient band-edge PL emission lines centered at around 5.5 eVat room temperature. The band-edge emission of hBN is two orders of magnitude higher than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hEN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (Eemi⊥c) is about 1.7 times stronger than the component along the c-axis (Eemillc). This is in contrast to AIN, in which the band­ edge emission is known to be polarized along the c-axis, (Eemillc). Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7x105 cm-1, which is more than 3 times higher than the value for AlN (~2x105 cm-1 . The hBN epilayer based photodetectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge PL emission peak and virtually no responses in the long wavelengths. The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.5 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate.

  10. Optoelectronic Sensor System for Guidance in Docking

    NASA Technical Reports Server (NTRS)

    Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.

    2004-01-01

    The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy

  11. Semiselective Optoelectronic Sensors for Monitoring Microbes

    NASA Technical Reports Server (NTRS)

    Tabacco, Mary Beth; Chuang, Han; Taylor,Laura; Russo, Jaime

    2003-01-01

    Sensor systems are under development for use in real-time detection and quantitation of microbes in water without need for sampling. These systems include arrays of optical sensors; miniature, portable electronic data-acquisition circuits; and optoelectronic interfaces between the sensor arrays and data-acquisition circuits. These systems are intended for original use in long-term, inline monitoring of waterborne micro-organisms in water-reclamation systems aboard future spacecraft. They could also be adapted to similar terrestrial uses with respect to municipal water supplies, stored drinking water, and swimming water; for detecting low-level biological contamination in biotechnological, semiconductor, and pharmaceutical process streams; and in verifying the safety of foods and beverages. In addition, they could be adapted to monitoring of airborne microbes and of surfaces (e.g., to detect and/or quantitate biofilms). The designs of the sensors in these systems are based partly on those of sensors developed previously for monitoring airborne biological materials. The designs exploit molecular- recognition and fluorescence-spectroscopy techniques, such that in the presence of micro-organisms of interest, fluorescence signals change and the changes can be measured. These systems are characterized as semiselective because they respond to classes of micro-organisms and can be used to discriminate among the classes. This semiselectivity is a major aspect of the design: It is important to distinguish between (1) the principle of detection and quantitation of classes of micro-organisms by use of these sensors and (2) the principle of detection and quantitation of individual microbiological species by means of prior immuno-diagnostic and/or molecular-biology techniques. Detection of classes (in contradistinction to species) is particularly valuable when the exact nature of a contaminant is unknown.

  12. Scaling VOI size in 3D μCT studies of trabecular bone: a test of the over-sampling hypothesis.

    PubMed

    Lazenby, Richard A; Skinner, Matthew M; Kivell, Tracy L; Hublin, Jean-Jacques

    2011-02-01

    For comparative 3D microCT studies of trabecular bone, the use of a volume of interest (VOI) scaled to body size may avoid over-sampling the trabecular mass in smaller versus larger-bodied taxa and comparison of regions that are not functionally homologous (Fajardo and Müller: Am J Phys Anthropol 115 (2001) 327-336), though the influence on quantitative analyses using scaled versus nonscaled VOIs remains poorly characterized. We compare trabecular architectural properties reflecting mass, organization, and orientation from three volumes of interest (large, scaled, and small) obtained from the distal first metacarpal in a sample of Homo (n = 10) and Pan (n = 12). We test the null hypotheses that neither absolute VOI size, nor scaling of the VOI to metacarpal size as a proxy for body size, biases intraspecific analyses nor impacts the detection of interspecific differences. These hypotheses were only partially supported. While certain properties (e.g., bone volume fraction or trabecular thickness) were not affected by varying VOI size within taxa, others were significantly impacted (e.g., intersection surface, connectivity, and structure). In comparing large versus scaled VOIs, we found that the large VOI inflated the number and/or magnitude of significant differences between Homo and Pan. In summary, our results support the use of scaled VOIs in studies of trabecular architecture. PMID:20979207

  13. Optoelectronic pantography diagnostics of temporomandibular disorders in patients with bruxism.

    PubMed

    Mehulić, Ketij; Gospić, Renata Kevilj; Dundjer, Alenko; Skrinjarić, Tomislav; Stefancić, Sanja; Vojvodić, Denis; Perinić, Margareta

    2009-09-01

    Temporomandibular disorders (TMD) is a joint term that encompasses a number of clinical symptoms that involve the teeth, masticatory musculature and temporomandibular joints (TMJ). They are a frequent cause of orofacial medical conditions. The aetiology of disorders is complex and individual etiologic factors are not sufficiently defined. Bruxism, in its centric or eccentric form, is becoming a frequent problem for dentists. The purpose of this study is to show factors of the condyle leading in patients with bruxism by optoelectronic pantography, and to establish the possibility of using optoelectronic pantography in the diagnostic procedure of TMD. Patients were selected (N = 42), with incomplete sets of teeth, without prosthodontic appliances and with traces and symptoms of TMD. After completing the history questionnaire a clinical check up and plaster cast analysis patients with bruxism were selected (N = 22) and without bruxism (N = 20). During the study optoelectronic String-condylocomp LR3, Dentron, D-Höchberg (software JAWS 30) was used. This study showed the possibility of applying optoelectronic pantography in TMD diagnostics and compares history, clinical and condylographic parameters in TMD patients with and without bruxism. Optoelectronic pantography enables us, by using relatively easy methods, to determine a more accurate diagnosis, highly important when choosing therapeutic methods and control of the aforementioned disorders. PMID:19860114

  14. Engineering heterojunctions with carbon nanostructures: towards high-performance optoelectronics

    NASA Astrophysics Data System (ADS)

    Wu, Judy Z.

    2015-08-01

    Low-dimensional carbon nanostructures such as nanotubes (CNTs) and graphene have excellent electronic, optoelectronic and mechanical properties, which provide fresh opportunities for designs of optoelectronic devices of extraordinary performance in addition to the benefits of low cost, large abundance, and light weight. This work investigates photodetectors made with CNTs and graphene with a particular focus on carbon-based nanohybrids aiming at a nanoscale control of photon absorption, exciton dissociation and charge transfer. Through several examples including graphene/GaSe-nanosheets, graphene/aligned ZnO nanorods, SWCNT/P3HT, and SWCNT/biomolecule, we show an atomic-scale control on the interfacial heterojunctions is the key to high responsivity and fast photoresponse in these nanohybrids optoelectronic devices.

  15. Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.

    PubMed

    Yu, Hyeonggeun; Dong, Zhipeng; Guo, Jing; Kim, Doyoung; So, Franky

    2016-04-27

    Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated. PMID:27082815

  16. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  17. A reconfigurable optoelectronic interconnect technology for multi-processor networks

    SciTech Connect

    Lu, Y.C.; Cheng, J.; Zolper, J.C.; Klem, J.

    1995-05-01

    This paper describes a new optical interconnect architecture and the integrated optoelectronic circuit technology for implementing a parallel, reconfigurable, multiprocessor network. The technology consists of monolithic array`s of optoelectronic switches that integrate vertical-cavity surface-emitting lasers with three-terminal heterojunction phototransistors, which effectively combined the functions of an optical transceiver and an optical spatial routing switch. These switches have demonstrated optical switching at 200 Mb/s, and electrical-to-optical data conversion at > 500 Mb/s, with a small-signal electrical-to-optical modulation bandwidth of {approximately} 4 GHz.

  18. Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays

    NASA Technical Reports Server (NTRS)

    Cai, Jianhong

    2015-01-01

    Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.

  19. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E.; Li, Jian; Forrest, Stephen; Rand, Barry

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  20. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  1. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    DOE PAGESBeta

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

  2. Magnetometer Based on the Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

    2005-01-01

    We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

  3. Stabilizing an optoelectronic microwave oscillator with photonic filters

    NASA Technical Reports Server (NTRS)

    Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.

    2003-01-01

    This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.

  4. Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

    PubMed

    Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

    2015-12-01

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties. PMID:26529491

  5. Microwave filter based on Lamb modes for optoelectronic generator

    NASA Astrophysics Data System (ADS)

    Vitko, V. V.; Nikitin, A. A.; Kondrashov, A. V.; Nikitin, A. A.; Ustinov, A. B.; Belyavskiy, P. Yu; Kalinikos, B. A.; Butler, J. E.

    2015-12-01

    Experimental results for narrowband filter based on yttrium iron garnet film epitaxially grown on gadolinium gallium garnet substrate have been shown. The principle of operation of the filter is based on excitation of Lamb modes in the substrate. We demonstrated also that the use of single crystal diamond as a substrate will significantly reduce the phase noise of the designed optoelectronic microwave generator.

  6. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  7. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  8. The Use of Opto-Electronics in Viscometry.

    ERIC Educational Resources Information Center

    Mazza, R. J.; Washbourn, D. H.

    1982-01-01

    Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

  9. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

    SciTech Connect

    Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; Martinez, Julio A.; Song, Erdong; Li, Qiming

    2015-11-03

    Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

  10. Growing perovskite into polymers for easy-processable optoelectronic devices.

    PubMed

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH₃NH₃PbI₃ (MAPbI₃) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  11. Nucleobase appended viologens: Building blocks for new optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Ciobanu, Marius; Asaftei, Simona

    2015-04-01

    We describe here the fabrication, characterization and possible applications of a new type of optical material - consisting of 4,4‧-bipyridinium core ("viologen") and nucleobases i.e. adenine and/or thymine made by H-bonding. The viologen-nucleobase derivatives were used to construct supramolecular structures in a "biomimetic way" with complementary oligonucleotides (ssDNA) and peptide nucleic acids (ssPNA) as templates. The new nanostructured materials are expected to exhibit enhanced optical and optoelectronic properties with application in the field of supramolecular electronics. Such viologen derivatives could be significant in the design of new 2D and 3D materials with potentially application in optoelectronics, molecular electronics or sensoric.

  12. D-π-A conjugated molecules for optoelectronic applications.

    PubMed

    Kim, Tae-Dong; Lee, Kwang-Sup

    2015-06-01

    Dipolar chromophores consisting of electron donor (D) and electron acceptor (A) groups connected through a conjugated π-bridge have been actively studied and integrated in optoelectronic and electronic devices. Generally, such π-conjugated molecules provide substantial delocalization of π-electrons over the molecules. Here, a brief overview of recent research on D-π-A dipolar chromophores including their syntheses and several promising applications is reported, especially in nonlinear optical devices and organic photovoltaics. Structure/property relationships are discussed in order to exploit the potentials by tuning the π-electron density, polarizability, and HOMO-LUMO band gap of the chromophores. Some of the examples may well set the stage for chip-scale integration of optoelectronics as well as the realization of an important array of new device technologies. PMID:25820642

  13. Reconfigurable high-speed optoelectronic interconnect technology for multiprocessor computers

    NASA Astrophysics Data System (ADS)

    Cheng, Julian

    1995-06-01

    We describe a compact optoelectronic switching technology for interconnecting multiple computer processors and shared memory modules together through dynamically reconfigurable optical paths to provide simultaneous, high speed communication amongst different nodes. Each switch provides a optical link to other nodes as well as electrical access to an individual processor, and it can perform optical and optoelectronic switching to covert digital data between various electrical and optical input/output formats. This multifunctional switching technology is based on the monolithic integration of arrays of vertical-cavity surface-emitting lasers with photodetectors and heterojunction bipolar transistors. The various digital switching and routing functions, as well as optically cascaded multistage operation, have been experimentally demonstrated.

  14. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    PubMed

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. PMID:26823085

  15. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N.; Strano, Michael S.

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  16. Development of a dual-axis optoelectronic precision level

    NASA Astrophysics Data System (ADS)

    Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

    2011-12-01

    This paper presents the design principle and applications of a innovative dual-axis optoelectronic level. A commercially available DVD pickup head is adopted as the angle sensor in association with the double-layer pendulum mechanism for dual-axis swings. A mass-damping system is analyzed to model the mechanical dynamics. Measured angles of both axes are processed by a microprocessor and displayed on a LCD or exported to an external PC. Compared with a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than +/-0.5 arc-seconds in the measuring range of +/-20 arc-seconds, and the settling time is within 0.5 sec. Two experimental results show the consistency with a Renishaw interfereometer and its practical use in industry.

  17. Van der Waals stacked 2D layered materials for optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Wang, Qixing; Chen, Yu; Wang, Zhuo; Wee, Andrew T. S.

    2016-06-01

    The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

  18. Opto-Electronic Oscillator Using Suppressed Phase Modulation

    NASA Technical Reports Server (NTRS)

    Dick, G. John; Yu, Nan

    2007-01-01

    A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

  19. Diffusion of excitons in materials for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Narayan, Monishka Rita; Ompong, David

    2015-06-01

    The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

  20. Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers.

    PubMed

    Desai, Sujay B; Madhvapathy, Surabhi R; Amani, Matin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Zhou, Yuzhi; Dubey, Madan; Ager, Joel W; Chrzan, Daryl; Javey, Ali

    2016-06-01

    Gold-mediated exfoliation of ultralarge optoelectronically perfect monolayers with lateral dimensions up to ≈500 μm is reported. Electrical, optical, and X-ray photo-electron spectroscopy characterization show that the quality of the gold-exfoliated flakes is similar to that of tape-exfoliated flakes. Large-area flakes allow manufacturing of large-area mono-layer transition metal dichalcogenide electronics. PMID:27007751

  1. Advances in graphene-based optoelectronics, plasmonics and photonics

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van

    2016-03-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

  2. Web-Enabled Optoelectronic Particle-Fallout Monitor

    NASA Technical Reports Server (NTRS)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  3. Nonlinear filter algorithm for opto-electronic target tracking

    NASA Astrophysics Data System (ADS)

    Xiong, Mao-tao; Song, Jian-xun; Wu, Qin-zhang

    2009-05-01

    At present in opto-electronic targets tracking, traditional accepted algorithms inevitably connect with linear errors. To improve the degraded performance of general algorithms, the Adaptive Unscented Particle Kalman Filter (AUPF) algorithm is proposed. The algorithm combines with Unscented Kalman Filter (UKF) to incorporate the most current observation datum and to generate the importance density function. Additionally, the Markov Chain Monte Carlo (MCMC) steps are adopted to counteract the problem of particles impoverishment caused by re-sampling step and thus the diversity of the particles is maintained. The AUPF algorithm reduces the nonlinear influence and improves the tracking accuracy of the opto-electronic targets tracking system. The analytic results of Monte Carlo simulation prove the AUPF algorithm is right and feasible, and it enhances the stability, the convergence rate and the accuracy of tracking system. The simulation results and algorithm provide a new approach for precise tracking of opto-electronic targets, they must have better applicative prospect in various engineering than the traditional tracking algorithms.

  4. Transparent electrodes for organic optoelectronic devices: a review

    NASA Astrophysics Data System (ADS)

    Cao, Weiran; Li, Jian; Chen, Hongzheng; Xue, Jiangeng

    2014-01-01

    Transparent conductive electrodes are one of the essential components for organic optoelectronic devices, including photovoltaic cells and light-emitting diodes. Indium-tin oxide (ITO) is the most common transparent electrode in these devices due to its excellent optical and electrical properties. However, the manufacturing of ITO film requires precious raw materials and expensive processes, which limits their compatibility with mass production of large-area, low-cost devices. The optical/electrical properties of ITO are strongly dependent on the deposition processes and treatment conditions, whereas its brittleness and the potential damage to underlying films during deposition also present challenges for its use in flexible devices. Recently, several other transparent conductive materials, which have various degrees of success relative to commercial applications have been developed to address these issues. Starting from the basic properties of ITO and the effect of various ITO surface modification methods, here we review four different groups of materials, doped metal oxides, thin metals, conducting polymers, and nanomaterials (including carbon nanotubes, graphene, and metal nanowires), that have been reported as transparent electrodes in organic optoelectronic materials. Particular emphasis is given to their optical/electrical and other material properties, deposition techniques, and applications in organic optoelectronic devices.

  5. Epitaxial growth of three-dimensionally architectured optoelectronic devices

    SciTech Connect

    Nelson, Erik C.; Dias, Neville L.; Bassett, Kevin P.; Dunham, Simon N.; Verma, Varun; Miyake, Masao; Wiltzius, Pierre; Rogers, John A.; Coleman, James J.; Li, Xiuling; Braun, Paul V.

    2011-07-24

    Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group III–V materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

  6. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  7. Optoelectronic properties of valence-state-controlled amorphous niobium oxide.

    PubMed

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-29

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications. PMID:27168317

  8. Strain engineered optoelectronic properties of transition metal dichalcogenides lateral heterostructures

    NASA Astrophysics Data System (ADS)

    Lee, Jaekwang; Yoon, Mina

    2015-03-01

    Most three-dimensional bulk-scale materials rarely survive beyond 1% strain, while recently spotlighted two-dimensional (2-D) materials can sustain a high elastic strain (up to 10%) to optimize optical quantities such as band gaps and absorption spectra governing optoelectronic device performance. Despite the enormous interest in strained 2-D materials, most researches are focused on single materials or vertical heterostructures where precise control of stacking orientation is challenging. Here, using first-principles density-functional calculations, we explore how uniaxial tensile strains modify overall electronic and optical properties of transition metal dichalcogenides lateral heterostructures, such as MoX2/WX2 (X =S, Se). Based on the detailed optoelectronic information, we predict the optimal strain condition for maximal power efficiency. Furthermore, we find that uniaxial tensile strain readily develops a continuously varying direct-bandgap across the lateral heterojunctions, which results in the broad range absorption of solar spectrum useful for future optoelectronic devices. This research was conducted at the CNMS, which is sponsored at Oak Ridge National Laboratory (ORNL) by the Office of Basic Energy Sciences, U.S. Department of Energy; a portion of theory work was supported by the LDRD Program of ORNL.

  9. Optoelectronics-related competence building in Japanese and Western firms

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kumiko

    1992-05-01

    In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

  10. Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

    2005-06-14

    A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

  11. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    NASA Astrophysics Data System (ADS)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  12. Graduate studies on optoelectronics in Argentina: an experience

    NASA Astrophysics Data System (ADS)

    Fernández, Juan C.; Garea, María. T.; Isaurralde, Silvia; Perez, Liliana I.; Raffo, Carlos A.

    2014-07-01

    The number of graduate programs in Optoelectronics in Argentina is scarce. The current Optics and Photonics Education Directory lists only three programs. One of them was launched in 2001 in the Facultad de Ingeniería (College of Engineering), Universidad de Buenos Aires (UBA). This was the first graduate program in the field, leading to a Master Degree in Optoelectronics. This decision arose from the demand of telecommunications industries and several estate- or private-funded research institutions working with us in the fields of lasers, optics, remote sensing, etc. A great bonus was the steady work, during several decades, of research groups in the College on the development of different type of lasers and optical non destructive tests and their engineering applications. As happened in many engineering graduate programs in Argentina at that time, few non full-time students could finish their studies, which called for 800 hours of traditional lecture-recitation classes, and the Master Thesis. In recent years Argentine Education authorities downsized the Master programs to 700 hours of blended learning and we redesigned the Graduate Optoelectronic Engineering Program to meet the challenge, dividing it in two successive one year programs, the first aimed at a professional training for almost immediate insertion in the labor market (called Especialización en Ingeniería Optoelectrónica), and the second (called Maestría en Ingeniería Optoelectrónica y Fotónica) aimed at a more academic and research target to comply with the UBA standards for Master degrees. The present work is a presentation of the new program design, which has begun in the current year.

  13. Single-sided lateral-field and phototransistor-based optoelectronic tweezers

    NASA Technical Reports Server (NTRS)

    Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

    2011-01-01

    Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

  14. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  15. Epsilon-near-zero mode for active optoelectronic devices.

    PubMed

    Vassant, S; Archambault, A; Marquier, F; Pardo, F; Gennser, U; Cavanna, A; Pelouard, J L; Greffet, J J

    2012-12-01

    The electromagnetic modes of a GaAs quantum well between two AlGaAs barriers are studied. At the longitudinal optical phonon frequency, the system supports a phonon polariton mode confined in the thickness of the quantum well that we call epsilon-near-zero mode. This epsilon-near-zero mode can be resonantly excited through a grating resulting in a very large absorption localized in the single quantum well. We show that the reflectivity can be modulated by applying a voltage. This paves the way to a new class of active optoelectronic devices working in the midinfrared and far infrared at ambient temperature. PMID:23368264

  16. Optoelectronic oscillator using an acousto-optic delay line

    NASA Astrophysics Data System (ADS)

    Yim, Sin Hyuk; Kim, Tae Hyun; Lee, Sangkyung; Roh, Hee Sook; Shim, Kyu Min

    2015-05-01

    We demonstrate an optoelectronic oscillator (OEO) based on an acousto-optic modulator (AOM). The free spectral range between the modes is a function of the total loop length of the OEO, which is dependent on the propagation time of the acoustic wave through the AOM. By using the huge difference in the magnitude between the speed of light and the acoustic velocity in the AOM, we can extend the effective loop length of the OEO up to 3.8 km. We have measured phase noise of the OEO. Further developments will be made by using a dual-loop configuration. Agency for Defense Development.

  17. Two-dimensional crystals: managing light for optoelectronics.

    PubMed

    Eda, Goki; Maier, Stefan A

    2013-07-23

    Semiconducting two-dimensional (2D) crystals such as MoS2 and WSe2 exhibit unusual optical properties that can be exploited for novel optoelectronics ranging from flexible photovoltaic cells to harmonic generation and electro-optical modulation devices. Rapid progress of the field, particularly in the growth area, is beginning to enable ways to implement 2D crystals into devices with tailored functionalities. For practical device performance, a key challenge is to maximize light-matter interactions in the material, which is inherently weak due to its atomically thin nature. Light management around the 2D layers with the use of plasmonic nanostructures can provide a compelling solution. PMID:23834654

  18. Integration of InP-based optoelectronics with silicon waveguides

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Ollila, Jyrki; Vilokkinen, Ville; Mörl, Ludwig; Möhrle, Martin; Hamelin, Régis

    2009-02-01

    Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

  19. Optoelectronic System for Measuring Heights Above a Floor

    NASA Technical Reports Server (NTRS)

    Youngquist, Robert C.; Davis, Chris; Polk, Jimmy; Burns, Brad; Haskell, William; Opalka, Tim; McClure, Michael

    2003-01-01

    An optoelectronic system has been developed for measuring heights, above a floor, of designated points on a large object. In the original application for which the system was conceived, the large object is a space shuttle and the designated points are two front and two rear points for the attachment of jacks for positioning the shuttle at the height and horizontal pitch specified for maintenance operations. The front and rear jacking points are required to be raised to heights of 198 1/4 in. (502.9 0.6 cm) and 120.6 1/4 in. (306.4 0.6 cm), respectively.

  20. Comparison of two methods of laser stabilization for optoelectronic oscillators

    NASA Astrophysics Data System (ADS)

    Salzenstein, Patrice; Saleh, Khaldoun; Zarubin, Mikhail; Trushin, Arseniy S.

    2014-05-01

    In order to stabilize the signal delivered by an optoelectronic oscillator (OEO) [1-5], it is necessary to lock the signal of the laser on the resonance. The laser wavelength must be stabilized onto one of the resonator's resonances to be able to maintain a stable performance of the oscillator. We first present the Pound Drever hall method that has been used to realize this setup. As an alternative method, we have also investigate another technique based on the use of acousto-optic cells (AOC). It is presented on part 3 of this paper.

  1. All-optoelectronic continuous-wave terahertz systems.

    PubMed

    Löffler, Torsten; Siebert, Karsten J; Quast, Holger; Hasegawa, Noburu; Loata, Gabriel; Wipf, Robert; Hahn, Tobias; Thomson, Mark; Leonhardt, Rainer; Roskos, Hartmut G

    2004-02-15

    We discuss the optoelectronic generation and detection of continuous-wave terahertz (THz) radiation by the mixing of visible/near-infrared laser radiation in photoconductive antennas. We review attempts to reach higher THz output-power levels by reverting from mobility-lifetime-limited photomixers to transit-time-limited p-i-n photodiodes. We then describe our implementation of a THz spectroscopy and imaging-measurement system and demonstrate its imaging performance with several examples. Possible application areas of THz imaging in the biomedical field and in surface characterization for industrial purposes are explored. PMID:15306519

  2. Optoelectronic set for measuring reflectance spectrum of living human skin

    NASA Astrophysics Data System (ADS)

    Gryko, Lukasz; Zajac, Andrzej; Gilewski, Marian; Kulesza, Ewa

    2015-09-01

    In the paper the authors present the developed optoelectronic set for measuring spectral reflectance of living human skin. The basic elements of the set are: the illuminator consists of the LED illuminator emitting a uniform distribution of spectral irradiance in the exposed field, the semispherical measuring chamber and the spectrometer which measures spectrum of reflected radiation. Measured radiation is from spectral range of tissue optical window (from 600 nm to 1000 nm). Knowledge about the reflectance spectrum of the patient skin allows adjusting spectral and energetic parameters of the radiation used in biostimulation treatment. The developed set also enables the repeatable exposures of patients in the Low Level Laser Therapy procedures.

  3. Advanced educational program in optoelectronics for undergraduates and graduates in electronics

    NASA Astrophysics Data System (ADS)

    Vladescu, Marian; Schiopu, Paul

    2015-02-01

    The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

  4. Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

    NASA Astrophysics Data System (ADS)

    Chang, Rang-Seng

    1992-05-01

    Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

  5. Blends of conjugated rigid-rod polymers: Novel supramolecular materials for electronics, optoelectronics and photonics

    SciTech Connect

    Jenekhe, S.A.

    1996-12-31

    Selected examples of binary blends of conjugated polymers will be presented to illustrate the vast scope of their supramolecular structures and electronic, optical, nonlinear optical, and optoelectronic properties.

  6. Analog-digital models of stream-aquifer systems

    USGS Publications Warehouse

    Moulder, E.A.; Jenkins, C.T.

    1969-01-01

    The best features of analog and digital computers were combined to make a management model of a stream-aquifer system. The analog model provides a means for synthesizing, verifying, and summarizing aquifer properties; the digital model permits rapid calculation of the effects of water management practices. Given specific management alternatives, a digital program can be written that will optimize operation plans of stream-aquifer systems. The techniques are demonstrated by application to a study of the Arkansas River valley in southeastern Colorado.

  7. Larger bases and mixed analog/digital neural nets

    SciTech Connect

    Beiu, V.

    1998-12-31

    The paper overviews results dealing with the approximation capabilities of neural networks, and bounds on the size of threshold gate circuits. Based on an explicit numerical algorithm for Kolmogorov`s superpositions the authors show that minimum size neural networks--for implementing any Boolean function--have the identity function as the activation function. Conclusions and several comments on the required precision are ending the paper.

  8. a 9-BIT, Pipelined Gallium Arsenide Analog-Digital Converter

    NASA Astrophysics Data System (ADS)

    Breevoort, Cornelius Marius

    1992-01-01

    Excellent Short Take-Off and Landing (STOL) performance is achieved by Upper Surface Blowing (USB) aircraft as a result of mounting high by-pass turbofan engines over the forward part of the wing. High lift levels are generated by directing the engine exhaust over the wing upper surface to entrain additional airflow and by using the Coanda effect to turn the exhaust flow downward over a large radius "Coanda" flap. Commercial application of USB technology could reduce airport congestion and community noise if future configurations can be designed with economically acceptable cruise drag levels. An experimental investigation of the high speed aerodynamics of USB aircraft configurations has been conducted to accurately define the magnitude and causes of the powered configuration cruise drag. A highly instrumented wind tunnel model of a realistic USB configuration has been used which permitted parametric variations in the number and spanwise location of the nacelles and accurately modeled the engine power effects with turbofan propulsion simulators. The measured force data provides an accurate definition of the cruise drag penalty associated with each configuration and the constructed pressure contour plots provide detailed insight into their causes. It was found that the high speed aerodynamics of USB configurations is a complex interaction of jet induced and wing transonic flowfields. The presence of the nacelles on the wing upper surface created a severe drag penalty which increased with freestream Mach number, power setting and angle of attack. The more widely spaced two nacelle configurations exhibited improved flowfields at moderate Mach numbers but suffered from drag levels comparable to the baseline configuration for high speed cruise conditions. At high Mach numbers and power settings, all of the tested configurations displayed strong shocks and separated zones in the wing/nacelle junction regions. Detailed discussions of the causes of the cruise drag penalty and recommended future design improvements are presented.

  9. Infrared telephoto lens design of hybrid optoelectronic joint transform correlator

    NASA Astrophysics Data System (ADS)

    Guo, Fei; Wang, Hongtao; Li, Lintao; Yin, Na; Wang, Wensheng

    2008-03-01

    Hybrid optoelectronic joint transform correlator is very useful for target detection and recognition in military and industry field. Nowadays, there are two kinds of usual detectors: one is visible detector which is sensitive to the diffusion of target; the other is infrared detector which is sensitive to the radiation of target. The performance of these two detectors both depend on their working conditions. Designing perfect optical system is the first step to target detection. While the merit of infrared optical system is it can not only detect great distance but also detect the target in the turbid air or smoke, flog and snow no matter at day or night. So it is much more appropriate to be applied in cluttered and formidable conditions and it can enhance target recognition ratio. In this paper, the infrared detector we adopted is infrared focal plane arrays with working waveband 8-12μm. Its resolving power is 30 lp /mm. For the infrared optical system, the effective focal length, relative aperture and the field of view should be large enough to ensure the long distance and large field of view target can be detected. In hybrid optoelectronic joint transform correlator, the high performance of infrared telephoto lenses is required. Here, we designed infrared telephoto lenses composed of three lenses. Its structure is simple but its performance is very good. It has met the requirement of target detection. Thus we can get the longer detection distance and higher recognition accuracy.

  10. Growing perovskite into polymers for easy-processable optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  11. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  12. Oxide nanowire networks and their electronic and optoelectronic characteristics

    NASA Astrophysics Data System (ADS)

    Mathews, Nripan; Varghese, Binni; Sun, Cheng; Thavasi, Velmurugan; Andreasson, Björn P.; Sow, Chornghaur H.; Ramakrishna, Seeram; Mhaisalkar, Subodh G.

    2010-10-01

    Oxide nanowire networks or oxide nanonets leverage some of the exceptional functionalities of one-dimensional nanomaterials along with the fault tolerance and flexibility of interconnected nanowires to creating exciting opportunities in large-area electronics as well as green energy systems. This paper reviews the electronic and optoelectronic properties of these networks and highlights their potential applications in field-effect transistors, optoelectronic devices, and solar cells. Techniques to grow nanowires and their subsequent integration into networks using contact printing and electrospinning are described. Electrical properties of field-effect transistors fabricated from contact printed nanowire networks are discussed, and means of integration of the nanowire networks of heterogenous materials that enable ambipolar device operation are outlined. Photocurrent properties of these nanowires are described, including the dye sensitization of large-bandgap SnO2 nanowires. The final section deals with the advantages of employing nanowire networks in dye-sensitized solar cells and the dependence of solar cell performance on morphology and surface area.

  13. All-organic optoelectronic sensor for pulse oximetry

    NASA Astrophysics Data System (ADS)

    Lochner, Claire M.; Khan, Yasser; Pierre, Adrien; Arias, Ana C.

    2014-12-01

    Pulse oximetry is a ubiquitous non-invasive medical sensing method for measuring pulse rate and arterial blood oxygenation. Conventional pulse oximeters use expensive optoelectronic components that restrict sensing locations to finger tips or ear lobes due to their rigid form and area-scaling complexity. In this work, we report a pulse oximeter sensor based on organic materials, which are compatible with flexible substrates. Green (532 nm) and red (626 nm) organic light-emitting diodes (OLEDs) are used with an organic photodiode (OPD) sensitive at the aforementioned wavelengths. The sensor’s active layers are deposited from solution-processed materials via spin-coating and printing techniques. The all-organic optoelectronic oximeter sensor is interfaced with conventional electronics at 1 kHz and the acquired pulse rate and oxygenation are calibrated and compared with a commercially available oximeter. The organic sensor accurately measures pulse rate and oxygenation with errors of 1% and 2%, respectively.

  14. All-organic optoelectronic sensor for pulse oximetry.

    PubMed

    Lochner, Claire M; Khan, Yasser; Pierre, Adrien; Arias, Ana C

    2014-01-01

    Pulse oximetry is a ubiquitous non-invasive medical sensing method for measuring pulse rate and arterial blood oxygenation. Conventional pulse oximeters use expensive optoelectronic components that restrict sensing locations to finger tips or ear lobes due to their rigid form and area-scaling complexity. In this work, we report a pulse oximeter sensor based on organic materials, which are compatible with flexible substrates. Green (532 nm) and red (626 nm) organic light-emitting diodes (OLEDs) are used with an organic photodiode (OPD) sensitive at the aforementioned wavelengths. The sensor's active layers are deposited from solution-processed materials via spin-coating and printing techniques. The all-organic optoelectronic oximeter sensor is interfaced with conventional electronics at 1 kHz and the acquired pulse rate and oxygenation are calibrated and compared with a commercially available oximeter. The organic sensor accurately measures pulse rate and oxygenation with errors of 1% and 2%, respectively. PMID:25494220

  15. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    PubMed

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. PMID:25223554

  16. Nanoengineered quantum dot medium for space optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Oktyabrsky, S.; Tokranov, V.; Yakimov, M.; Sergeev, A.; Mitin, V.

    2012-10-01

    Resistance to temperature and ionizing radiation of space optoelectronic devices can be improved through control of carrier kinetics in nanoscale systems. Recent results in the science and technology of self-assembled heteroepitaxial InAs quantum dot (QD) medium related to photonic applications are discussed. Focus is placed on management of carrier kinetics via nanoengineering of electronic spectrum and potential profiles in the QD ensemble using modeling and controlled fabrication of QDs with molecular beam epitaxy. Shape-engineered QD sheets embedded into GaAs quantum wells were found to withstand two orders of magnitude higher proton dose than QWs and to account for high luminescence efficiency and thermally stable laser diodes. Built-in charge in QDs is responsible for improvement of both near and mid-IR optical absorption, but also control photoelectron lifetime in the structures. The negatively charged QD medium was the first QD material that has recently shown credible improvement of solar cell efficiency. It has resulted from IR energy harvesting and suppressed fast electron capture processes. It is thus expected that QD InAs/GaAs photovoltaics will overcome the efficiency and lifespan of multi-junction solar cells. Potentials due to QD built-in charge are also responsible for improved photoelectron lifetime in QD infrared photodetectors. QD correlated clusters provide even higher collective potential barriers around clusters and constitute the novel approach to the optoelectronic materials combining manageable photoelectron lifetime, high mobility, and tunable localized and conducting states.

  17. Growing perovskite into polymers for easy-processable optoelectronic devices

    PubMed Central

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  18. Structural evolution and optoelectronic applications of multilayer silicene

    NASA Astrophysics Data System (ADS)

    Guo, Zhi-Xin; Zhang, Yue-Yu; Xiang, Hongjun; Gong, Xin-Gao; Oshiyama, Atsushi

    2015-11-01

    Despite the recent progress on two-dimensional multilayer materials (2DMMs) with weak interlayer interactions, the investigation of 2DMMs with strong interlayer interactions is far from sufficient. Here, we report on first-principles calculations that clarify the structural evolution and optoelectronic properties of such a 2DMM, multilayer silicene. With our global optimization algorithm, we discover the existence of rich dynamically stable multilayer silicene phases, whose stability is closely related to the extent of s p3 hybridization that can be evaluated by average bonds and effective bond angles. Stable Si(111) surface structures are obtained when the silicene thickness gets up to four, showing the critical thickness for a structural evolution. We also find that multilayer silicene with π -bonded surfaces presents outstanding optoelectronic properties for solar cells and optical fiber communications due to the incorporation of s p2 -type bonds in the s p3 -type bond dominated system. This study helps to complete the picture of the structure and related property evolution of 2DMMs with strong interlayer interactions.

  19. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    NASA Astrophysics Data System (ADS)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  20. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  1. A Long-Term View on Perovskite Optoelectronics.

    PubMed

    Docampo, Pablo; Bein, Thomas

    2016-02-16

    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  2. Digital optical computers at the optoelectronic computing systems center

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  3. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  4. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  5. Optoelectronic switching in diamond and optical surface breakdown

    SciTech Connect

    Lipatov, E I; Tarasenko, V F

    2008-03-31

    The optoelectronic switching in two natural diamond samples of type 2-A is studied at voltages up to 1000 V and the energy density of control 60-ns, 308-nm laser pulses up to 0.6 J cm{sup -2}. It is shown that the design of a diamond switch affects the switching efficiency. When the energy density exceeds 0.2 J cm{sup -2} and the interelectrode surface is completely illuminated, the surface breakdown is initiated by UV radiation, which shunts the current flow through the diamond crystal. When the illumination of the interelectrode surface is excluded, the surface breakdown does not occur. The threshold radiation densities sufficient for initiating the surface breakdown are determined for electric field strengths up to 10 kV cm{sup -1}. (laser applications and other topics in quantum electronics)

  6. Spatially resolved optoelectronic characterization of perovskite lead iodide nanostructures

    NASA Astrophysics Data System (ADS)

    Xiao, Rui; Peng, Xingyu; Hou, Yasen; Yu, Dong

    The high power conversion efficiency of organo-lead halide perovskite-based solar cells has attracted world-wide attention over the past few years. The high efficiency was believed to originate from the unusual properties including long carrier lifetimes and consequent long carrier diffusion lengths in these materials. Ion drift, ferroelectricity, and charge traps have been proposed to account for the efficient charge separation and photocurrent hysteresis. However, it remains unclear which mechanism is dominating. We fabricate field effect transistors (FETs) incorporating single nanoplates/nanowires of organic perovskite and perform scanning photocurrent microscopic (SPCM) measurements to extract carrier diffusion lengths as a function of gate voltage, source-drain bias. Spatially resolved optoelectronic investigations of single crystalline perovskite nanostructures provide valuable information and key evidence on distinguishing the dominating charge transport/separation mechanism.

  7. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  8. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    NASA Astrophysics Data System (ADS)

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, GunChul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-04-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  9. Materials issues for advanced electronic and optoelectronic connectors

    NASA Astrophysics Data System (ADS)

    Crane, J.; Wen, S.

    1990-09-01

    Trends of increased speed, density and power of electronic devices and circuitry translate to a need for connector substrate materials with improved form-ability and mechanical stability. Many contact surface requirements will continue to be met by precious metals for low contact force and tin in moderate contact force connectors. However, the demands for lower insertion forces, increased wear resistance, higher operating temperatures and improved corrosion resistance will challenge materials experts and connector designers to develop and utilize cost-effective replacements for tin and gold in electronic connectors. The stability and compatibility requirements of optoelectronic connectors provide challenges over a wide range of materials with the added dimension of accommodating essential optical characteristics.

  10. Opto-electronic transport properties of graphene oxide based devices

    SciTech Connect

    Das, Poulomi; Ibrahim, Sk; Pal, Tanusri; Chakraborty, Koushik; Ghosh, Surajit

    2015-06-24

    Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.

  11. Frequency-doubling optoelectronic oscillator based on destructive interference

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Chen, Fushen; Fan, Mengqiu; Li, Chengxin; Dong, Qimeng

    2015-12-01

    A frequency-doubling optoelectronic oscillator (OEO) using two cascaded modulators based on destructive interference is proposed and experimentally demonstrated. In the proposed system, we utilize a cascaded modulator including a phase modulator and an intensity modulator, which implements a carrier-suppressed double-sideband modulation based on destructive interference to generate a frequency-doubled microwave signal. Meanwhile, the phase modulator is connected by a chirp fiber Bragg grating in the loop, which forms a microwave photonic filter to select the fundamental frequency signal in the OEO loop. As a result, a frequency-doubled microwave signal at 17.9 and 20.5 GHz is generated, respectively. The phase noises and the long-term stability of the generated microwave signals are also investigated.

  12. A nonlinear optoelectronic filter for electronic signal processing

    PubMed Central

    Loh, William; Yegnanarayanan, Siva; Ram, Rajeev J.; Juodawlkis, Paul W.

    2014-01-01

    The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology. PMID:24402418

  13. Advanced Opto-Electronics (LIDAR and Microsensor Development)

    NASA Technical Reports Server (NTRS)

    Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

    2005-01-01

    Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

  14. EDITORIAL: Focus on Advanced Semiconductor Heterostructures for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Amann, Markus C.; Capasso, Federico; Larsson, Anders; Pessa, Markus

    2009-12-01

    Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures. Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung

  15. Microbeam High Angular Resolution Diffraction Applied to Optoelectronic Devices

    SciTech Connect

    Kazimirov, A.; Bilderback, D. H.; Sirenko, A. A.; Cai, Z.-H.; Lai, B.

    2007-01-19

    Collimating perfect crystal optics in a combination with the X-ray focusing optics has been applied to perform high angular resolution microbeam diffraction and scattering experiments on micron-size optoelectronic devices produced by modern semiconductor technology. At CHESS, we used capillary optics and perfect Si/Ge crystal(s) arrangement to perform X-ray standing waves, high angular-resolution diffraction and high resolution reciprocal space mapping analysis. At the APS, 2ID-D microscope beamline, we employed a phase zone plate producing a beam with the size of 240 nm in the horizontal plane and 350 nm in the vertical (diffraction) plane and a perfect Si (004) analyzer crystal to perform diffraction analysis of selectively grown InGaAsP and InGaAlAs-based waveguides with arc sec angular resolution.

  16. Injectable, Cellular-Scale Optoelectronics with Applications for Wireless Optogenetics

    PubMed Central

    Kim, Tae-il; McCall, Jordan G.; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R.; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gun Chul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.; Bruchas, Michael R.

    2013-01-01

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, an ability to insert light sources, detectors, sensors and other components into precise locations of the deep brain could yield versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering. PMID:23580530

  17. Canonical quaternary signed-digit arithmetic using optoelectronics symbolic substitution

    NASA Astrophysics Data System (ADS)

    Cherri, A. K.; Khachab, N. I.

    1996-07-01

    A higher radix based signed-digit number system, such as the quaternary signed-digit (QSD) number system, allows higher information storage density, less complexity, fewer system components, and fewer cascaded gates and operations. An optoelectronics symbolic substitution scheme to handle the parallel quaternary signed-digit (QSD) arithmetic operations is proposed. A conversion algorithm is employed on the QSD numbers to simplify the addition process and reduce the number of the optical symbolic substitution rules. The optical addition operation of two QSD numbers is performed in one-step. An efficient shared content-addressable memory (SCAM)-based optical implementation of the QSD addition/subtraction operations employs a fixed number of minterms for any operand length. The canonical QSD number addition/subtraction scheme requires a significantly reduced number of minterms when compared with a similar previously reported technique.

  18. Error detection and correction in an optoelectronic memory system

    NASA Astrophysics Data System (ADS)

    Hofmann, Robert; Pandey, Madhulima; Levitan, Steven P.; Chiarulli, Donald M.

    1998-11-01

    This paper describes the implementation of error detection and correction logic in the optoelectronic cache memory prototype at the University of Pittsburgh. In this project, our goal is to integrate a 3-D optical memory directly into the memory hierarchy of a personal computer. As with any optical storage system, error correction is essential to maintaining acceptable system performance. We have implemented a fully pipelined, real time decoder for 60-bit Spectral Reed-Solomon code words. The decoder is implemented in reconfigurable logic, using a single Xilinx 4000-series FPGA per code word and is fully scalable using multiple FPGA's. The current implementation operates at 33 Mhz, and processes two code words in parallel per clock cycle for an aggregate data rate of 4 Gb/s. We present a brief overview of the project and of Spectral Reed-Solomon codes followed by a description of our implementation and performance data.

  19. A tunable optoelectronic oscillator based on a tunable microwave attenuator

    NASA Astrophysics Data System (ADS)

    Wei, Zhihu; Wang, Rong; Pu, Tao; Sun, Guodan; Fang, Tao; Zheng, Jilin

    2013-10-01

    A novel realization of a wideband tunable optoelectronic oscillator (OEO) based on dual-port electrode Mach-Zehnder modulator (DMZM), a tunable microwave attenuator (TMA), and a chirped fiber Bragg grating (CFBG) is proposed and demonstrated. By simply adjusting the power ratio between the two arms of DMZM, the chirp of the DMZM will be tuned, and the center frequency of the microwave photonic filter will be tuned. When the OEO loop in the proposed system is closed, the output frequency of OEO is determined by the microwave photonic filter, and a high spectral purity microwave signal with a tunable frequency from 5.8 to 11 GHz is generated. The single sideband (SSB) phase noise of the generated signal could reach -107.4 dBc/Hz at an offset frequency of 10 kHz.

  20. Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

    NASA Technical Reports Server (NTRS)

    Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

    2004-01-01

    Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

  1. Modifying the Optoelectronic Properties of Rubrene by Strain

    NASA Astrophysics Data System (ADS)

    Sharifzadeh, Sahar; Ramasubramaniam, Ashwin

    Rubrene crystals are promising organic electronic and optoelectronic materials due to their high charge carrier mobility. Recent studies have shown that the electronic properties of rubrene films can be tuned by substrate-induced strain, suggesting a new route towards the design of more efficient devices. Here, we present a first-principles density functional theory and many-body perturbation theory analysis of strain-induced changes to the mechanical, electronic, and optical properties of rubrene crystals. With an applied strain that is consistent with experiment, we predict changes of hole motilities in excellent agreement with electrical conductivity measurements. Furthermore, we predict that the optical absorption and nature of low-energy excitons within the crystal can be tuned by an applied strain as low as 1%. This work utilized resources at the Center for Nanoscale Materials, supported by the U.S. Department of Energy under Contract No. DE-AC02-06CH11357.

  2. Operational Regimes and Physics Present in Optoelectronic Tweezers

    PubMed Central

    Valley, Justin K.; Jamshidi, Arash; Ohta, Aaron T.; Hsu, Hsan-Yin; Wu, Ming C.

    2008-01-01

    Optoelectronic tweezers (OET) are a powerful light-based technique for the manipulation of micro- and nanoscopic particles. In addition to an optically patterned dielectrophoresis (DEP) force, other light-induced electrokinetic and thermal effects occur in the OET device. In this paper, we present a comprehensive theoretical and experimental investigation of various fluidic, optical, and electrical effects present during OET operation. These effects include DEP, light-induced ac electroosmosis, electrothermal flow, and buoyancy-driven flow. We present finite-element modeling of these effects to establish the dominant mode for a given set of device parameters and bias conditions. These results are confirmed experimentally and present a comprehensive outline of the operational regimes of the OET device. PMID:19079767

  3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Mak, Kin Fai; Shan, Jie

    2016-04-01

    Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.

  4. Scanning tunneling microscopy studies of diamond films and optoelectronic materials

    NASA Technical Reports Server (NTRS)

    Perez, Jose M.

    1993-01-01

    In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

  5. High-speed switching characteristics of integrated optoelectronic crossbar switch

    NASA Astrophysics Data System (ADS)

    Gouin, Francois L.; Almeida, Carlos; Callender, Claire L.; Robitaille, Lucie; Noad, Julian P.

    1999-04-01

    Optoelectronic (OE) switching is a promising approach for routing signals in fiber optic networks. Recently, the integration of a 4 X 4 MSM array with optical surface waveguides has been reported. This technique greatly simplifies the packaging of an OE switch. The on-chip polyimide optical waveguides perform the optical signal distribution to a matrix of MSMs which are responsible for the switching operation itself. Photoresponse bandwidths exceeding 4 GHz have been demonstrated. Another important characteristic of a switch is the switching speed since it determines the reconfiguration time. Mechanical and thermal optical waveguide switches offer switching speeds of the order of milliseconds which is sufficient for network traffic management but too slow for packet switching. We report measurements on the switching characteristics of a 4 X 4 optoelectronic switch performed in both the frequency and time domain. In the time domain, the individual crosspoints exhibit a rise time of 3 ns. However, a sizeable overshoot and ringing settles only after 35 ns. This constitutes the reconfiguration time at present. This is confirmed by measurements in the frequency domain of the electrical transmission from control line to output line. The 3-dB switching bandwidth is a few hundred megahertz. The 35 ns reconfiguration time indicates that it is already suitable for packet switching in a 10 Mb/s network. Switching speed measurements on individual MSMs suggests that modifications to the switch circuit could improve the switching time. The switch could also find application as a component in the wavelength conversion circuit of a WDM fiber optic network.

  6. OLED-on-CMOS integration for optoelectronic sensor applications

    NASA Astrophysics Data System (ADS)

    Vogel, Uwe; Kreye, Daniel; Reckziegel, Sven; Törker, Michael; Grillberger, Christiane; Amelung, Jörg

    2007-02-01

    Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon- CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices.

  7. Communications with chaotic optoelectronic systems cryptography and multiplexing

    NASA Astrophysics Data System (ADS)

    Rontani, Damien

    With the rapid development of optical communications and the increasing amount of data exchanged, it has become utterly important to provide effective architectures to protect sensitive data. The use of chaotic optoelectronic devices has already demonstrated great potential in terms of additional computational security at the physical layer of the optical network. However, the determination of the security level and the lack of a multi-user framework are two hurdles which have prevented their deployment on a large scale. In this thesis, we propose to address these two issues. First, we investigate the security of a widely used chaotic generator, the external cavity semiconductor laser (ECSL). This is a time-delay system known for providing complex and high-dimensional chaos, but with a low level of security regarding the identification of its most critical parameter, the time delay. We perform a detailed analysis of the in uence of the ECSL parameters to devise how higher levels of security can be achieved and provide a physical interpretation of their origin. Second, we devise new architectures to multiplex optical chaotic signals and realize multi-user communications at high bit rates. We propose two different approaches exploiting known chaotic optoelectronic devices. The first one uses mutually coupled ECSL and extends typical chaos-based encryption strategies, such as chaos-shift keying (CSK) and chaos modulation (CMo). The second one uses an electro-optical oscillator (EOO) with multiple delayed feedback loops and aims first at transposing coded-division multiple access (CDMA) and then at developing novel strategies of encryption and decryption, when the time-delays of each feedback loop are time-dependent.

  8. Construction and optoelectronic properties of organic one-dimensional nanostructures.

    PubMed

    Zhao, Yong Sheng; Fu, Hongbing; Peng, Aidong; Ma, Ying; Liao, Qing; Yao, Jiannian

    2010-03-16

    In the last 10 years, nanomaterials based on small organic molecules have attracted increasing attention. Such materials have unique optical and electronic properties, which could lead to new applications in nanoscale devices. Zero-dimensional (0D) organic nanoparticles with amorphous structures have been widely studied; however, the systematic investigation of crystalline one-dimensional (1D) organic nanostructures has only emerged in recent years. Researchers have used inorganic 1D nanomaterials, such as wires, tubes, and belts, as building blocks in optoelectronic nanodevices. We expect that their organic counterparts will also play an important role in this field. Because organic nanomaterials are composed of molecular units with weaker intermolecular interactions, they allow for higher structural tunability, reactivity, and processability. In addition, organic materials usually possess higher luminescence efficiency and can be grown on almost any solid substrate. In this Account, we describe recent progress in our group toward the construction of organic 1D nanomaterials and studies of their unique optical and electronic properties. First, we introduce the techniques for synthesizing 1D organic nanostructures. Because this strategy is both facile and reliable, liquid phase synthesis is most commonly used. More importantly, this method allows researchers to produce composite materials, including core/sheath and uniformly doped structures, which allow to investigate the interactions between different components in the nanomaterials, including fluorescent resonance energy transfer and photoinduced electron transfer. Physical vapor deposition allows for the synthesis of organic 1D nanomaterials with high crystallinity. Nanomaterials produced with this method offer improved charge transport properties and better optoelectronic performance in areas including multicolor emission, tunable emission, optical waveguide, and lasing. Although inorganic nanomaterials have

  9. Modeling and optoelectronic realization of an artificial cortex

    NASA Astrophysics Data System (ADS)

    Pashaie, Ramin

    codes and cortical topological computational maps. Next step in this research is seeking suitable enabling technologies, such as electronics and optics, for hardware implementation of these cortical models. It is a general consensus that realization of parallelism and massive interconnections can be done far better in optics compared to electronics. Nevertheless, one can exploit optoelectronic methodologies that combine the benefits of optics with flexibilities of electronics. An innovative optoelectronic approach is taking advantage of the optical mechanism of a special type of stimulable storage phosphor, the so called electron trapping materials. Our analytical modelings and experimental works reveal that the equilibrium state luminescence of this material can be controlled to generate a variety of different nonlinear behaviors including quasi-quadratic responses that can be used for generation of quadratic return maps. Combining this versatility with the state-of-the-art high speed spatial light modulators and CCD cameras, large arrays of quadratic return maps can be accommodated in a thin film of electron trapping material. Another approach which is investigated in this dissertation is based on using the recently developed digital microelectromechanic spatial light modulators. These modulators can control the exposure precisely. We show that a closed loop of such a spatial light modulator and a CCD camera can be used to build an optoelectronic machine suitable for parallel recursive computations similar to our cortical models.

  10. Growth of sapphire crystals for optoelectronics from alumina in a protective medium

    NASA Astrophysics Data System (ADS)

    Dan'ko, A. Ja.; Nizhankovskiy, S. V.; Puzikov, V. M.; Grin', L. A.; Sidelnikova, N. S.; Adonkin, G. T.; Kanishchev, V. N.

    2008-12-01

    This paper reports on the results obtained during the development of the technological process of growth of sapphire crystals for optoelectronics through horizontal directional crystallization in a gaseous argon medium at a pressure of 800 mmHg. The sapphire crystals intended for the use in optoelectronics have been grown from purified molten alumina according to the authors’ technology. It has been demonstrated that, under conditions of a high temperature gradient across the crystallization front and at a low content of reducing components (H2, CO) in the growth medium, it is possible to grow sapphire crystals satisfying the requirements of optoelectronics.

  11. Private sector data collection on optoelectronics markets and technologies in the U.S.

    NASA Astrophysics Data System (ADS)

    Polishuk, Paul J.; Taylor, K.

    1992-05-01

    Information Gatekeepers Inc. has been in the business of collecting and analyzing information in the fiber optics and optoelectronics industries for the past fourteen years through its publishing and consulting businesses. Since optoelectronic technologies are well reported by the scientific journals and conferences, only data on markets, competitive trends, production capabilities, etc., are discussed in this paper. The paper reviews the present situation of private sector data collection on optoelectronics technologies and markets, the problems that exist in data collection, and possible solutions to what is perceived as a serious national problem.

  12. High throughput optoelectronic smart pixel systems using diffractive optics

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Hao

    1999-12-01

    Recent developments in digital video, multimedia technology and data networks have greatly increased the demand for high bandwidth communication channels and high throughput data processing. Electronics is particularly suited for switching, amplification and logic functions, while optics is more suitable for interconnections and communications with lower energy and crosstalk. In this research, we present the design, testing, integration and demonstration of several optoelectronic smart pixel devices and system architectures. These systems integrate electronic switching/processing capability with parallel optical interconnections to provide high throughput network communication and pipeline data processing. The Smart Pixel Array Cellular Logic processor (SPARCL) is designed in 0.8 m m CMOS and hybrid integrated with Multiple-Quantum-Well (MQW) devices for pipeline image processing. The Smart Pixel Network Interface (SAPIENT) is designed in 0.6 m m GaAs and monolithically integrated with LEDs to implement a highly parallel optical interconnection network. The Translucent Smart Pixel Array (TRANSPAR) design is implemented in two different versions. The first version, TRANSPAR-MQW, is designed in 0.5 m m CMOS and flip-chip integrated with MQW devices to provide 2-D pipeline processing and translucent networking using the Carrier- Sense-MultipleAccess/Collision-Detection (CSMA/CD) protocol. The other version, TRANSPAR-VM, is designed in 1.2 m m CMOS and discretely integrated with VCSEL-MSM (Vertical-Cavity-Surface- Emitting-Laser and Metal-Semiconductor-Metal detectors) chips and driver/receiver chips on a printed circuit board. The TRANSPAR-VM provides an option of using the token ring network protocol in addition to the embedded functions of TRANSPAR-MQW. These optoelectronic smart pixel systems also require micro-optics devices to provide high resolution, high quality optical interconnections and external source arrays. In this research, we describe an innovative

  13. Programmable Optoelectronic Multiprocessors: Design, Performance and CAD Development

    NASA Astrophysics Data System (ADS)

    Kiamilev, Fouad Eskender

    1992-01-01

    This thesis describes the development of Programmable Optoelectronic Multiprocessor (POEM) architectures and systems. POEM systems combine simple electronic processing elements with free-space optical interconnects to implement high-performance, massively-parallel computers. POEM architectures are fundamentally different from architectures used in conventional VLSI systems. Novel system partitioning and processing element design methods have been developed to ensure efficient implementation of POEM architectures with optoelectronic technology. The main contributions of this thesis are: architecture and software design for the POEM prototype built at UCSD; detailed technology design-tradeoff and comparison studies for POEM interconnection networks; and application of the VHSIC Hardware Description Language (VHDL) to the design, simulation, and synthesis of POEM computers. A general-purpose POEM SIMD parallel computer architecture has been designed for symbolic computing applications. A VHDL simulation of this architecture was written to test the POEM hardware running parallel programs prior to prototype fabrication. Detailed performance comparison of this architecture with all-optical computing, based on symbolic substitution, has also been carried out to show that POEMs offer higher computational efficiency. A detailed technological design of a packet-switched POEM multistage interconnection network system has been performed. This design uses optically interconnected stages of K x K electronic switching elements, where K is a variable parameter, called grain-size, that determines the ratio of optics to electronics in the system. A thorough cost and performance comparison between this design and existing VLSI implementations was undertaken to show that the POEM approach offers better scalability and higher performance. The grain-size was optimized, showing that switch sizes of 16 x 16 to 256 x 256 provide maximum performance/cost. The effects of varying

  14. Middle infrared optoelectronic absorption systems for monitoring physiological glucose solutions

    NASA Astrophysics Data System (ADS)

    Martin, W. Blake

    Tight monitoring of the glucose levels for diabetic individuals is essential to control long-term complications. A definitive diabetes management system has yet to be developed for the diabetic. This research investigates the application of middle infrared absorption frequencies for monitoring glucose levels in biological solutions. Three frequencies were identified using a Fourier transform infrared spectrometer and correlated to changes in glucose concentrations. The 1035 +/- 1 cm-1 frequency was determined to be the best representative frequency. Other biological molecules contributed no significant interference to monitoring glucose absorption. A second frequency at 1193 cm-1 was suggested as a representative background absorption frequency, which could be used for more accurate glucose absorption values. Next, a quantum cascade laser optoelectronic absorption system was designed and developed to monitor glucose. After careful alignment and design, the system was used to monitor physiological glucose concentrations. Correlation at 1036 cm-1 with glucose changes was comparable to the previous results. The use of the background absorption frequency was verified. This frequency essentially acts as a calibrating frequency to adjust in real-time to any changes in the background absorption that may alter the accuracy of the predicted glucose value. An evanescent wave cavity ring-down spectroscopy technique was explored to monitor molecules in a biological solution. Visible light at 425 nm was used to monitor hemoglobin in control urine samples. An adsorption isotherm for hemoglobin was detectable to limit of 5.8 nM. Evanescent wave cavity ring-down spectroscopy would be useful for a glucose solution. Given an equivalent system designed for the middle infrared, the molar extinction coefficient of glucose allows for a detectable limit of 45 mg/dl for a free-floating glucose solution, which is below normal physiological concentrations. The future use of a hydrophobic

  15. New Schemes for Improved Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yao, Steve; Ji, Yu; Ilchenko, Vladimir

    2000-01-01

    The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

  16. Optoelectronic complex inner product for evaluating quality of image segmentation

    NASA Astrophysics Data System (ADS)

    Power, Gregory J.; Awwal, Abdul Ahad S.

    2000-11-01

    In automatic target recognition and machine vision applications, segmentation of the images is a key step. Poor segmentation reduces the recognition performance. For some imaging systems such as MRI and Synthetic Aperture Radar (SAR) it is difficult even for humans to agree on the location of the edge which allows for segmentation. A real- time dynamic approach to determine the quality of segmentation can enable vision systems to refocus of apply appropriate algorithms to ensure high quality segmentation for recognition. A recent approach to evaluate the quality of image segmentation uses percent-pixels-different (PPD). For some cases, PPD provides a reasonable quality evaluation, but it has a weakness in providing a measure for how well the shape of the segmentation matches the true shape. This paper introduces the complex inner product approach for providing a goodness measure for evaluating the segmentation quality based on shape. The complex inner product approach is demonstrated on SAR target chips obtained from the Moving and Stationary Target Acquisition and Recognition (MSTAR) program sponsored by the Defense Advanced Research Projects Agency (DARPA) and the Air Force Research Laboratory (AFRL). The results are compared to the PPD approach. A design for an optoelectronic implementation of the complex inner product for dynamic segmentation evaluation is introduced.

  17. Graphene/MoS2 heterostructures for optoelectronics applications

    NASA Astrophysics Data System (ADS)

    Han, P.; Wong, Q.; El Fatimy, A.; Ishigami, M.; Barbara, P.

    Graphene and other atomically thin materials can be combined to make novel ultra-thin devices that are suitable for flexible substrates. However, fabricating these heterostructures is a challenge. Most previous work was done by stacking monolayers exfoliated from bulk materials , which is a very time-consuming, low-yield method. Large-area monolayer can also be grown by CVD and stacked, as demonstrated by the successful transfer of graphene on as-grown MoS2, yet the optical properties of some materials like MoS2 may be degraded by the processing required to detach them from the growth substrate, thereby limiting options in device architecture. Here we develop a method to transfer, align and stack large flakes and films of MoS2 and graphene after transferring both from the growth substrate onto an arbitrary substrate. The Raman and photoluminescence measurements show that the optical properties of the stacked monolayers are not degraded, making this method viable for fabrication of optoelectronics devices. . Work supported by the U.S. ONR (Award: N000141310865) and the NSF-REU (DMR-1358978).

  18. Laser processing of components for polymer mircofluidic and optoelectronic products

    NASA Astrophysics Data System (ADS)

    Gillner, Arnold; Bremus-Koebberling, Elke A.; Wehner, Martin; Russek, Ulrich A.; Berden, Thomas

    2001-06-01

    Miniaturization is one of the keywords for the production of customer oriented and highly integrated consumer products like mobile phones, portables and other products from the daily life and there are some first silicon made products like pressure sensors, acceleration sensors and micro fluidic components, which are built in automobiles, washing machines and medical products. However, not all applications can be covered with this material, because of the limitations in lateral and 3-dimensional structuring, the mechanical behavior, the functionality and the costs of silicon. Therefore other materials, like polymers have been selected as suitable candidates for cost effective mass products. This holds especially for medical and optical applications, where the properties of selected polymers, like biocompatibility, inert chemical behavior and high transparency can be used. For this material laser micro processing offers appropriate solutions for structuring as well as for packaging with high flexibility, material variety, structure size, processing speed and easy integration into existing fabrication plants. The paper presents recent results and industrial applications of laser micro processing for polymer micro fluidic devices, like micro analysis systems, micro reactors and medical micro implants, where excimer radiation is used for lateral structuring and diode lasers have used for joining and packaging. Similar technologies have been applied to polymer waveguides to produce passive optoelectronic components for high speed interconnection with surface roughness less than 20 nm and low attenuation. The paper also reviews the technical and economical limitations and the potential of the technology for other micro products.

  19. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  20. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

    PubMed Central

    2012-01-01

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future. PMID:22501032

  1. MOF-based electronic and opto-electronic devices.

    PubMed

    Stavila, V; Talin, A A; Allendorf, M D

    2014-08-21

    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance. PMID:24802763

  2. Advanced polymer systems for optoelectronic integrated circuit applications

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.; Stengel, Kelly M. T.; Shacklette, Lawrence W.; Norwood, Robert A.; Xu, Chengzeng; Wu, Chengjiu; Yardley, James T.

    1997-01-01

    An advanced versatile low-cost polymeric waveguide technology is proposed for optoelectronic integrated circuit applications. We have developed high-performance organic polymeric materials that can be readily made into both multimode and single-mode optical waveguide structures of controlled numerical aperture (NA) and geometry. These materials are formed from highly crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, toughness, loss, and stability against yellowing and humidity. These monomers are intermiscible, providing for precise adjustment of the refractive index from 1.30 to 1.60. Waveguides are formed photolithographically, with the liquid monomer mixture polymerizing upon illumination in the UV via either mask exposure or laser direct-writing. A wide range of rigid and flexible substrates can be used, including glass, quartz, oxidized silicon, glass-filled epoxy printed circuit board substrate, and flexible polyimide film. We discuss the use of these materials on chips and on multi-chip modules (MCMs), specifically in transceivers where we adaptively produced waveguides on vertical-cavity surface-emitting lasers (VCSELs) embedded in transmitter MCMs and on high- speed photodetector chips in receiver MCMs. Light coupling from and to chips is achieved by cutting 45 degree mirrors using excimer laser ablation. The fabrication of our polymeric structures directly on the modules provides for stability, ruggedness, and hermeticity in packaging.

  3. Prospects of III-nitride optoelectronics grown on Si

    NASA Astrophysics Data System (ADS)

    Zhu, D.; Wallis, D. J.; Humphreys, C. J.

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  4. Organic non-linear optics and opto-electronics

    NASA Astrophysics Data System (ADS)

    Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, M.; Meneses-Nava, M. A.; Barbosa-García, O.; Santillán, R.; Farfán, N.

    2010-12-01

    π-conjugated organic molecules and polymers are of great importance in physics, chemistry, material science and engineering. It is expected that, in the near future, organic materials will find widespread use in many technological applications. In the case of organic opto-electronic systems, the list of devices includes light emitting diodes (OLEDs), photovoltaic cells (OPVs), field-effect transistors (OFET), photorefractive materials for light manipulation, among others. These materials are also used for photonic applications: all-optical switching, modulators, optical correlators, plastic waveguides, all polymeric integrated circuits, solid-state lasers, and for biophotonic applications as in the case of the development of organic labels for multiphoton microscopy and photodynamic therapy. The advances in the developing of organic compounds with better mechanical, electrical, and optical (linear and non-linear) characteristics are of a great importance for this field. Here, we present the research on this area carried out at the Centro de Investigaciones en Óp-tica (CIO), in collaboration with Chemistry Departments of different institutions. This work focuses on the optical characterization of materials through several techniques such as TOF, FWM, TBC, THG Maker Fringes, HRS, Z-scan, and TPEF. Additionally, some applications, such as dynamic holography by using photorefractive polymers, and OPVs cells will be discussed.

  5. Manipulating and assembling metallic beads with Optoelectronic Tweezers.

    PubMed

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M; Neale, Steven L

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10(-9) N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  6. Density measurement in automotive batteries by means of optoelectronic sensors

    NASA Astrophysics Data System (ADS)

    Cao Paz, Ana; Marcos Acevedo, Jorge; Doval Gandoy, Jesus

    2004-06-01

    Lead-acid batteries are an energy storage system used in automotive sector, electric traction, communication remote control, etc. In all of this applications, and specially in remote control, is interested to know, among other variables, the electrolyte density. This measurement allow us to manage a battery or a set of batteries. In this work we present an optoelectronic sensor developed for the measurement of the lead-acid electrolyte density. The sensor has an optical emitter-receiver pair, two plastic optical fibers and the electronic circuit. One fiber is used like a reference in order to minimize the possible common mode errors, due temperature, power supplies, etc. The other fiber is the sensitive fiber and the measurements are taken with it, the functioning principle is an U bend configuration which allows losses due the refraction to the surrounding liquid, this losses depends on the liquid density (electrolyte density). Several tests were done with different conditions and different charging and discharging strategies, the results demonstrate the validity of this technique for the lead-acid electrolyte density measurement with a good stability in the time.

  7. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  8. Real-time optoelectronic morphological processor for human face recognition

    NASA Astrophysics Data System (ADS)

    Liu, Haisong; Wu, Minxian; Jin, Guofan; Cheng, Gang; He, Qingsheng

    1998-01-01

    Many commercial and law enforcement applications of face recognition need to be high-speed and real-time, such as passing through customs quickly while ensuring security. However, face recognition by using computers only is time- consuming due to the intensive calculation task. Recently optical implementations of real-time face recognition have attracted much attention. In this paper, a real-time optoelectronic morphological processor for face recognition is presented. It is based on original-complementary composite encoding hit-or-miss transformation, which combines the foreground and background of an image into a whole. One liquid-crystal display panel is used as two real- time SLMs for both stored images and face images to be recognized, which are of 256 X 256 pixels. A speed of 40 frames/s and four-channel recognition ability have been achieved. The experimental results have shown that the processor has an accuracy over 90% and error tolerance to rotation up to 8 deg, to noise disturbance up to 25%, and to image loss up to 40%.

  9. Design of a high-resolution optoelectronic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Palanker, Daniel; Vankov, Alexander; Huie, Phil; Baccus, Stephen

    2005-03-01

    It has been demonstrated that electrical stimulation of the retina can produce visual percepts in blind patients suffering from macular degeneration and retinitis pigmentosa. However, current retinal implants provide very low resolution (just a few electrodes), whereas at least several thousand pixels would be required for functional restoration of sight. This paper presents the design of an optoelectronic retinal prosthetic system with a stimulating pixel density of up to 2500 pix mm-2 (corresponding geometrically to a maximum visual acuity of 20/80). Requirements on proximity of neural cells to the stimulation electrodes are described as a function of the desired resolution. Two basic geometries of sub-retinal implants providing required proximity are presented: perforated membranes and protruding electrode arrays. To provide for natural eye scanning of the scene, rather than scanning with a head-mounted camera, the system operates similar to 'virtual reality' devices. An image from a video camera is projected by a goggle-mounted collimated infrared LED-LCD display onto the retina, activating an array of powered photodiodes in the retinal implant. The goggles are transparent to visible light, thus allowing for the simultaneous use of remaining natural vision along with prosthetic stimulation. Optical delivery of visual information to the implant allows for real-time image processing adjustable to retinal architecture, as well as flexible control of image processing algorithms and stimulation parameters.

  10. A versatile optoelectronic aid for low vision patients.

    PubMed

    Peláez-Coca, María Dolores; Vargas-Martín, Fernando; Mota, Sonia; Díaz, Javier; Ros-Vidal, Eduardo

    2009-09-01

    The purpose of this work is to describe a versatile optoelectronic aid for low vision rehabilitation based on reconfigurable hardware. This aid is easily adaptable to diverse pathologies (with different associated processing tasks) and to the progression of the visual impairment. This platform has a mobile configuration that uses a see-through head-mounted display (Nomad). We have implemented different types of vision enhancement on this versatile platform, and briefly summarize here their computational costs (in terms of hardware resource requirements). We have evaluated two representative capabilities of this aid (Augmented View and digital zoom) with measurements of visual acuity, contrast sensitivity and visual field. We have tested the Nomad head-mounted display and the Augmented View modality, in eight subjects with retinitis pigmentosa: the digital zoom was tested in six low vision subjects and nine normally-sighted subjects. We show that the Nomad display with Augmented View configuration does not impair the residual vision; and that there is an increase in visual acuity (VA) with the digital zoom configuration. The major advantage of this platform is that it can easily embed different image processing tasks and since it is based on a FPGA device, it can be specifically configured to tasks requiring real-time processing. PMID:19689551

  11. Optoelectronic plethysmography compared to spirometry during maximal exercise.

    PubMed

    Layton, Aimee M; Moran, Sienna L; Garber, Carol Ewing; Armstrong, Hilary F; Basner, Robert C; Thomashow, Byron M; Bartels, Matthew N

    2013-01-15

    The purpose of this study was to compare simultaneous measurements of tidal volume (Vt) by optoelectronic plethysmography (OEP) and spirometry during a maximal cycling exercise test to quantify possible differences between methods. Vt measured simultaneously by OEP and spirometry was collected during a maximal exercise test in thirty healthy participants. The two methods were compared by linear regression and Bland-Altman analysis at submaximal and maximal exercise. The average difference between the two methods and the mean percentage discrepancy were calculated. Submaximal exercise (SM) and maximal exercise (M) Vt measured by OEP and spirometry had very good correlation, SM R=0.963 (p<0.001), M R=0.982 (p<0.001) and high degree of common variance, SM R(2)=0.928, M R(2)=0.983. Bland-Altman analysis demonstrated that during SM, OEP could measure exercise Vt as much as 0.134 L above and -0.025 L below that of spirometry. OEP could measure exercise Vt as much as 0.188 L above and -0.017 L below that of spirometry. The discrepancy between measurements was -2.0 ± 7.2% at SM and -2.4 ± 3.9% at M. In conclusion, Vt measurements at during exercise by OEP and spirometry are closely correlated and the difference between measurements was insignificant. PMID:23022440

  12. Solution-processed Optoelectronic Devices from Colloidal Inorganic Semiconductor Materials

    NASA Astrophysics Data System (ADS)

    Tchieu, Andrew A.

    This dissertation contains design, synthesis, fabrication and testing of optoelectronic devices which are composed of colloidal inorganic semiconductor materials and fabricated by potentially low-cost solution-processing methods. The first part of this dissertation demonstrates a novel fabrication method where colloidal quantum dots (QDs) are self-assembled layer-by-layer into a thin film structure through electrostatic interaction. This process allows precise control of QD thin film thickness by self-assembly and can in principle be applied to a wide range of substrates. Using such QD thin films, photoconductor photodetectors and metal-intrinsic-metal photodiodes have been demonstrated. In the second part of this dissertation, heavy-metal-free colloidal Si materials are synthesized by electrochemical etching Si wafers, followed by surface modification and ultra-sonication for dispersion of Si nano- and/or micro-particles in various solvents. Demonstrated applications include RGB photoluminescent Si phosphors, scattering-enhanced Si nano-/micro-particle composite photodetectors and hybrid Si QD-organic light-emitting-diodes (LEDs).

  13. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  14. Enhancement of sun-tracking with optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wu, Jiunn-Chi

    2015-09-01

    Sun-tracking is one of the most challenging tasks in implementing CPV. In order to justify the additional complexity of sun-tracking, careful assessment of performance of CPV by monitoring the performance of sun-tracking is vital. Measurement of accuracy of sun-tracking is one of the important tasks in an outdoor test. This study examines techniques with three optoelectronic devices (i.e. position sensitive device (PSD), CCD and webcam). Outdoor measurements indicated that during sunny days (global horizontal insolation (GHI) > 700 W/m2), three devices recorded comparable tracking accuracy of 0.16˜0.3°. The method using a PSD has fastest sampling rate and is able to detect the sun's position without additional image processing. Yet, it cannot identify the sunlight effectively during low insolation. The techniques with a CCD and a webcam enhance the accuracy of centroid of sunlight via the optical lens and image processing. The image quality acquired using a webcam and a CCD is comparable but the webcam is more affordable than that of CCD because it can be assembled with consumer-graded products.

  15. New optoelectronic sensor for measuring biologically effective irradiance

    NASA Astrophysics Data System (ADS)

    Kosyachenko, Leonid A.; Sklyarchuk, Valery M.

    1997-12-01

    A new optoelectronic sensor whose spectral responsivity to UV radiation is almost identical with that of the human skin or of the eyes is presented. The sensor comprises two closely-spaced UV-sensitive Au-SiC diode, one of which is fitted with a glass filter. The photodiodes are connected to electronics that amplifies, combines and subtracts electrical signals generated by radiation in the photodiodes. The responsivity of the Au-SiC diode structure with a semitransparent gold electrode covers the whole UV spectrum, with the long-wavelength end bounded by the semiconductor bandgap. The photodiode with a filter absorbing wavelengths shorter than 315-320 nm is responsive in the UV-A region, while the difference between the electrical signals generated in the filter-containing and filter-free diodes is determined by the UV-B + IV-C radiation. The measuring of biologically effective radiation over the entire UV spectral range is achieved through combining the signal generated by UV-A radiation and the previously amplified difference signal generated by UV-B + UV-C radiation. The sensor spectral responsivity thus obtained is very close to the tabular curve of the relative spectral effectiveness of UV radiation on the normal human skin or eyes.

  16. Technical quality assessment of an optoelectronic system for movement analysis

    NASA Astrophysics Data System (ADS)

    Di Marco, R.; Rossi, S.; Patanè, F.; Cappa, P.

    2015-02-01

    The Optoelectronic Systems (OS) are largely used in gait analysis to evaluate the motor performances of healthy subjects and patients. The accuracy of marker trajectories reconstruction depends on several aspects: the number of cameras, the dimension and position of the calibration volume, and the chosen calibration procedure. In this paper we propose a methodology to evaluate the effects of the mentioned sources of error on the reconstruction of marker trajectories. The novel contribution of the present work consists in the dimension of the tested calibration volumes, which is comparable with the ones normally used in gait analysis; in addition, to simulate trajectories during clinical gait analysis, we provide non-default paths for markers as inputs. Several calibration procedures are implemented and the same trial is processed with each calibration file, also considering different cameras configurations. The RMSEs between the measured trajectories and the optimal ones are calculated for each comparison. To investigate the significant differences between the computed indices, an ANOVA analysis is implemented. The RMSE is sensible to the variations of the considered calibration volume and the camera configurations and it is always inferior to 43 mm.

  17. Optoelectronic Instrument Monitors pH in a Culture Medium

    NASA Technical Reports Server (NTRS)

    Anderson, Melody M.; Pellis, Neal; Jeevarajan, Anthony S.; Taylor, Thomas D.

    2004-01-01

    An optoelectronic instrument monitors the pH of an aqueous cell-culture medium in a perfused rotating-wall-vessel bioreactor. The instrument is designed to satisfy the following requirements: It should be able to measure the pH of the medium continuously with an accuracy of 0.1 in the range from 6.5 to 7.5. It should be noninvasive. Any material in contact with the culture medium should be sterilizable as well as nontoxic to the cells to be grown in the medium. The biofilm that inevitably grows on any surface in contact with the medium should not affect the accuracy of the pH measurement. It should be possible to obtain accurate measurements after only one calibration performed prior to a bioreactor cell run. The instrument should be small and lightweight. The instrument includes a quartz cuvette through which the culture medium flows as it is circulated through the bioreactor. The cuvette is sandwiched between light source on one side and a photodetector on the other side. The light source comprises a red and a green light-emitting diode (LED) that are repeatedly flashed in alternation with a cycle time of 5 s. The responses of the photodiode to the green and red LEDs are processed electronically to obtain a quantity proportional to the ratio between the amounts of green and red light transmitted through the medium.

  18. Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres.

    PubMed

    Zhang, Yin; Chen, Chen; Liang, C Y; Liu, Z W; Li, Y S; Che, Renchao

    2015-11-01

    Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its intrinsic inhomogeneous strain distribution. Geometric phase analysis (GPA) based on high-resolution transmission electron microscopy (HRTEM) imaging reveals that the strain distribution and the associated PL properties can be accurately controlled by changing the growth temperature gradient, which depends on the distance between the boats used for raw material evaporation and microsphere deposition. The stacking-fault density, lattice distortion degree and strain distribution at the shell interfacial region of the Ga2S3 microspheres could be readily adjusted. Ab initio first-principles calculations confirm that the lowest conductive band (LCB) is dominated by S-3s and Ga-4p states, which shift to the low-energy band as a result of the introduction of tensile strain, well in accordance with the observed PL evolution. Therefore, based on our strain driving strategy, novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed. PMID:26440072

  19. Prospects of III-nitride optoelectronics grown on Si.

    PubMed

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. PMID:24088511

  20. Manipulating and assembling metallic beads with Optoelectronic Tweezers

    PubMed Central

    Zhang, Shuailong; Juvert, Joan; Cooper, Jonathan M.; Neale, Steven L.

    2016-01-01

    Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been developed as a micromanipulation technology for controlling micro- and nano-particles with applications such as cell sorting and studying cell communications. Additionally, the capability of moving small objects accurately and assembling them into arbitrary 2D patterns also makes OET an attractive technology for microfabrication applications. In this work, we demonstrated the use of OET to manipulate conductive silver-coated Poly(methyl methacrylate) (PMMA) microspheres (50 μm diameter) into tailored patterns. It was found that the microspheres could be moved at a max velocity of 3200 μm/s, corresponding to 4.2 nano-newton (10−9 N) DEP force, and also could be positioned with high accuracy via this DEP force. The underlying mechanism for this strong DEP force is shown by our simulations to be caused by a significant increase of the electric field close to the particles, due to the interaction between the field and the silver shells coating the microspheres. The associated increase in electrical gradient causes DEP forces that are much stronger than any previously reported for an OET device, which facilitates manipulation of the metallic microspheres efficiently without compromise in positioning accuracy and is important for applications on electronic component assembling and circuit construction. PMID:27599445

  1. Optoelectronics of supported and suspended 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Bolotin, Kirill

    2014-03-01

    Two-dimensional semiconductors, materials such monolayer molybdenum disulfide (MoS2) are characterized by strong spin-orbit and electron-electron interactions. However, both electronic and optoelectronic properties of these materials are dominated by disorder-related scattering. In this talk, we investigate approaches to reduce scattering and explore physical phenomena arising in intrinsic 2D semiconductors. First, we discuss fabrication of pristine suspended monolayer MoS2 and use photocurrent spectroscopy measurements to study excitons in this material. We observe band-edge and van Hove singularity excitons and estimate their binding energies. Furthermore, we study dissociation of these excitons and uncover the mechanism of their contribution to photoresponse of MoS2. Second, we study strain-induced modification of bandstructures of 2D semiconductors. With increasing strain, we find large and controllable band gap reduction of both single- and bi-layer MoS2. We also detect experimental signatures consistent with strain-induced transition from direct to indirect band gap in monolayer MoS2. Finally, we fabricate heterostructures of dissimilar 2D semiconductors and study their photoresponse. For closely spaced 2D semiconductors we detect charge transfer, while for separation larger than 10nm we observe Forster-like energy transfer between excitations in different layers.

  2. Thermal modeling and temperature measurements in optoelectronic waveguide devices

    NASA Astrophysics Data System (ADS)

    Allard, M.; Boudreau, Marcel G.; Masut, Remo A.

    1998-12-01

    Optoelectronic devices are particularly sensitive to temperature changes induced by light absorption and current flow. In order to study the thermal issues arising in the Mach-Zehnder optical modulator manufactured by Nortel, a non-linear finite-element thermal model of the device was constructed, which computes the internal temperature as a function of the applied voltage and optical power in the waveguide. An experimental technique was also developed, in which liquid crystals are used to measure the temperature on the device surface. The model predictions and the experimental results were found to agree well over wide ranges of optical power and voltage. The model and the technique have produced evidence of a thermal cross-talk between an integrated laser and the modulator: the peak internal temperature inside the modulator is higher in integrated devices than in the stand-alone configuration for identical voltage and optical power. Because of the desire to integrate multiple devices on a common substrate and the continuous increase of the optical powers in optical fiber systems, thermal issues will only become more important in future systems.

  3. Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.

    PubMed

    Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing

    2016-01-26

    Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics. PMID:26673796

  4. Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

    NASA Astrophysics Data System (ADS)

    Recht, Daniel

    This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

  5. Optoelectronic analysis of multijunction wire array solar cells

    NASA Astrophysics Data System (ADS)

    Turner-Evans, Daniel B.; Chen, Christopher T.; Emmer, Hal; McMahon, William E.; Atwater, Harry A.

    2013-07-01

    Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si0.9Ge0.1 structures and investigate III-V on Si1-xGex device design with an analytical model and optoelectronic simulations. We consider Si0.1Ge0.9 wires coated with a GaAs0.9P0.1 shell in three different geometries: conformal, hemispherical, and spherical. The analytical model indicates that efficiencies approaching 34% are achievable with high quality materials. Full field electromagnetic simulations serve to elucidate the optical loss mechanisms and demonstrate light guiding into the wire core. Simulated current-voltage curves under solar illumination reveal the impact of a varying GaAs0.9P0.1 minority carrier lifetime. Finally, defective regions at the hetero-interface are shown to have a negligible effect on device performance if highly doped so as to serve as a back surface field. Overall, the growths and the model demonstrate the feasibility of the proposed geometries and can be used to guide tandem wire array solar cell designs.

  6. Optoelectronic Chaos in a Simple Light Activated Feedback Circuit

    NASA Astrophysics Data System (ADS)

    Joiner, K. L.; Palmero, F.; Carretero-González, R.

    The nonlinear dynamics of an optoelectronic negative feedback switching circuit is studied. The circuit, composed of a bulb, a photoresistor, a thyristor and a linear resistor, corresponds to a nightlight device whose light is looped back into its light sensor. Periodic bifurcations and deterministic chaos are obtained by the feedback loop created when the thyristor switches on the bulb in the absence of light being detected by the photoresistor and the bulb light is then looped back into the nightlight to switch it off. The experimental signal is analyzed using tools of delay-embedding reconstruction that yield a reconstructed attractor with fractional dimension and positive Lyapunov exponent suggesting chaotic behavior for some parameter values. We construct a simple circuit model reproducing experimental results that qualitatively matches the different dynamical regimes of the experimental apparatus. In particular, we observe an order-chaos-order transition as the strength of the feedback is varied corresponding to varying the distance between the nightlight bulb and its photo-detector. A two-dimensional parameter diagram of the model reveals that the order-chaos-order transition is generic for this system.

  7. One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

    PubMed

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

    2013-06-11

    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. PMID:23629853

  8. EDFA-based coupled opto-electronic oscillator and its phase noise

    NASA Technical Reports Server (NTRS)

    Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

    2004-01-01

    EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

  9. 25th anniversary article: carbon nanotube- and graphene-based transparent conductive films for optoelectronic devices.

    PubMed

    Du, Jinhong; Pei, Songfeng; Ma, Laipeng; Cheng, Hui-Ming

    2014-04-01

    Carbon nanotube (CNT)- and graphene (G)-based transparent conductive films (TCFs) are two promising alternatives for commonly-used indium tin oxide-based TCFs for future flexible optoelectronic devices. This review comprehensively summarizes recent progress in the fabrication, properties, modification, patterning, and integration of CNT- and G-TCFs into optoelectronic devices. Their potential applications and challenges in optoelectronic devices, such as organic photovoltaic cells, organic light emitting diodes and touch panels, are discussed in detail. More importantly, their key characteristics and advantages for use in these devices are compared. Despite many challenges, CNT- and G-TCFs have demonstrated great potential in various optoelectronic devices and have already been used for some products like touch panels of smartphones. This illustrates the significant opportunities for the industrial use of CNTs and graphene, and hence pushes nanoscience and nanotechnology one step towards practical applications. PMID:24591083

  10. Study of optoelectronic switch for satellite-switched time-division multiple access

    NASA Technical Reports Server (NTRS)

    Su, Shing-Fong; Jou, Liz; Lenart, Joe

    1987-01-01

    The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.

  11. A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

    NASA Astrophysics Data System (ADS)

    Chang, C. Y.; Choi, Daeyoung; Locquet, A.; Wishon, Michael J.; Merghem, K.; Ramdane, Abderrahim; Lelarge, François; Martinez, A.; Citrin, D. S.

    2016-05-01

    A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

  12. Strain-tuned optoelectronic properties of hollow gallium sulphide microspheres

    NASA Astrophysics Data System (ADS)

    Zhang, Yin; Chen, Chen; Liang, C. Y.; Liu, Z. W.; Li, Y. S.; Che, Renchao

    2015-10-01

    Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its intrinsic inhomogeneous strain distribution. Geometric phase analysis (GPA) based on high-resolution transmission electron microscopy (HRTEM) imaging reveals that the strain distribution and the associated PL properties can be accurately controlled by changing the growth temperature gradient, which depends on the distance between the boats used for raw material evaporation and microsphere deposition. The stacking-fault density, lattice distortion degree and strain distribution at the shell interfacial region of the Ga2S3 microspheres could be readily adjusted. Ab initio first-principles calculations confirm that the lowest conductive band (LCB) is dominated by S-3s and Ga-4p states, which shift to the low-energy band as a result of the introduction of tensile strain, well in accordance with the observed PL evolution. Therefore, based on our strain driving strategy, novel guidelines toward the reasonable design of sulfide semiconductors with tunable photoluminescence properties are proposed.Sulfide semiconductors have attracted considerable attention. The main challenge is to prepare materials with a designable morphology, a controllable band structure and optoelectronic properties. Herein, we report a facile chemical transportation reaction for the synthesis of Ga2S3 microspheres with novel hollow morphologies and partially filled volumes. Even without any extrinsic dopant, photoluminescence (PL) emission wavelength could be facilely tuned from 635 to 665 nm, depending on its

  13. Thin film technologies for optoelectronic components in fiber optic communication

    NASA Astrophysics Data System (ADS)

    Perinati, Agostino

    1998-02-01

    will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors - 6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach 17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s to 5, 10, 40 Gb/s; narrow band wavelength division multiplexing (WDM) filters are required for higher transmission capacity through multiwavelength technique and for optical amplifier. In the access area (distribution network) passive components as splitters, couplers, filters are needed together with optical amplifiers and transceivers for point-to-multipoint optical signal distribution: main issue in this area is the total cost to be paid by the customer for basic and new services. Multimedia services evolution, through fiber to the home and to the desktop approach, will be mainly affected by the availability of technologies suitable for component consistent integration, high yield manufacturing processes and final low cost. In this paper some of the optoelectronic components and related thin film technologies expected to mainly affect the fiber optic transmission evolution, either for long distance telecommunication systems or for subscriber network, are presented.

  14. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  15. Atomic Clock Based on Opto-Electronic Oscillator

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Yu, Nan

    2005-01-01

    A proposed highly accurate clock or oscillator would be based on the concept of an opto-electronic oscillator (OEO) stabilized to an atomic transition. Opto-electronic oscillators, which have been described in a number of prior NASA Tech Briefs articles, generate signals at frequencies in the gigahertz range characterized by high spectral purity but not by longterm stability or accuracy. On the other hand, the signals generated by previously developed atomic clocks are characterized by long-term stability and accuracy but not by spectral purity. The proposed atomic clock would provide high spectral purity plus long-term stability and accuracy a combination of characteristics needed to realize advanced developments in communications and navigation. In addition, it should be possible to miniaturize the proposed atomic clock. When a laser beam is modulated by a microwave signal and applied to a photodetector, the electrical output of the photodetector includes a component at the microwave frequency. In atomic clocks of a type known as Raman clocks or coherent-population-trapping (CPT) clocks, microwave outputs are obtained from laser beams modulated, in each case, to create two sidebands that differ in frequency by the amount of a hyperfine transition in the ground state of atoms of an element in vapor form in a cell. The combination of these sidebands produces a transparency in the population of a higher electronic level that can be reached from either of the two ground-state hyperfine levels by absorption of a photon. The beam is transmitted through the vapor to a photodetector. The components of light scattered or transmitted by the atoms in the two hyperfine levels mix in the photodetector and thereby give rise to a signal at the hyperfine- transition frequency. The proposed atomic clock would include an OEO and a rubidium- or cesium- vapor cell operating in the CPT/Raman regime (see figure). In the OEO portion of this atomic clock, as in a typical prior OEO, a

  16. Development of optoelectronic monitoring system for ear arterial pressure waveforms

    NASA Astrophysics Data System (ADS)

    Sasayama, Satoshi; Imachi, Yu; Yagi, Tamotsu; Imachi, Kou; Ono, Toshirou; Man-i, Masando

    1994-02-01

    Invasive intra-arterial blood pressure measurement is the most accurate method but not practical if the subject is in motion. The apparatus developed by Wesseling et al., based on a volume-clamp method of Penaz (Finapres), is able to monitor continuous finger arterial pressure waveforms noninvasively. The limitation of Finapres is the difficulty in measuring the pressure of a subject during work that involves finger or arm action. Because the Finapres detector is attached to subject's finger, the measurements are affected by inertia of blood and hydrostatic effect cause by arm or finger motion. To overcome this problem, the authors made a detector that is attached to subject's ear and developed and optoelectronic monitoring systems for ear arterial pressure waveform (Earpres). An IR LEDs, photodiode, and air cuff comprised the detector. The detector was attached to a subject's ear, and the space adjusted between the air cuff and the rubber plate on which the LED and photodiode were positioned. To evaluate the accuracy of Earpres, the following tests were conducted with participation of 10 healthy male volunteers. The subjects rested for about five minutes, then performed standing and squatting exercises to provide wide ranges of systolic and diastolic arterial pressure. Intra- and inter-individual standard errors were calculated according to the method of van Egmond et al. As a result, average, the averages of intra-individual standard errors for earpres appeared small (3.7 and 2.7 mmHg for systolic and diastolic pressure respectively). The inter-individual standard errors for Earpres were about the same was Finapres for both systolic and diastolic pressure. The results showed the ear monitor was reliable in measuring arterial blood pressure waveforms and might be applicable to various fields such as sports medicine and ergonomics.

  17. II-VI Semiconductor microstructures:from physics to optoelectronics

    NASA Astrophysics Data System (ADS)

    Pautrat, J. L.

    1994-12-01

    The tellurium compounds family displays many interesting features. The various compounds cover a very large range of bandgap energies from 0 (Cd{0.15}Hg0.85Te) to more than 3 eV (ZnTe : 2.4 eV ; MnTe : 3.2 eV ; MgTe : 3.5 eV). The lattice parameters of the various compounds are sometimes almost perfectly matched, as in the CdTe/CdxHg{1-x}Te case, or slightly enough mismatched for a coherent epitaxy to be performed. Furthermore, good quality Cd{0.96}Zn{0.04}Te substrates are now available which allow to grow a large variety of microstructures using molecular beam epitaxy. The thickness control of the deposited layers allows to design and grow sophisticated beterostructures incorporating monolayer thick features. The direct band gap of these materials makes them well-suited to many optoelectronic applications in the infrared and visible range. A few examples of applications are described in more details : i) microtip semiconductor laser based on a cold microtip electron emitter for cathodic pumping of a CdTe/CdMnTe laser cavity ; ii) multiquantum well structures showing a marked excitonic absorption band at room temperature and the disappearance of this band when an electric field is applied to the structure. Application to self electrooptic and photorefractive devices ; iii) Bragg mirrors for the infrared. In addition to the usual semiconductor properties, the manganese compounds display interesting properties which can be useful in the field of magnetooptics.

  18. Optoelectronic blood oximetry as a tool of health safety monitoring

    NASA Astrophysics Data System (ADS)

    Cysewska-Sobusiak, Anna

    2001-08-01

    A metrological approach of some selected problems connected with the significant field of biomedical optics i.e., monitoring of arterial blood oxygenation by use of the tissues as optical media exposed to the controlled light action, has been presented. The subject of the measurements based on utilization of the selection absorption properties of blood is the hemoglobin oxygen saturation. Using optoelectronic sensing allows to convert sophisticated effects of noninvasive light-living tissue interaction to electrical signals which may be convenient to measure. Pulse oximetry which is based upon such a way of sensing and processing, is the recent advance in noninvasive oximetry. The unique advantages of that marvelous diagnostic technique have caused to recommend pulse oximeters as standard equipment in intensive care and other critical situations impending hypoxemia appearance. However, end-users of the pulse oximeters not always are aware of that these devices fall under specific limitations, of both physiological and technical nature. The author of this paper is a metrologist and deals mainly with various interdisciplinary problems of a measurement reliability including the aspects such as uncertainty of an outcome accessible to the user, causes affecting sensitivity, resolution and repeatability of processing function, and response time and stability of results. Referring to the subject discussed herein, and taking into account some open questions, the author's contribution is her own experience in modeling as well as in in vivo measuring of transilluminated living objects. A proposed novel use of the known pulse oximetry concept may be considered as complementary results against a general review background of the achievements obtained in oximetry as the state-of-the-art, and furthermore, the developing studies which are still in progress.

  19. Optoelectronic properties of dicyanofluorene-based n-type polymers.

    PubMed

    Vijayakumar, Chakkooth; Saeki, Akinori; Seki, Shu

    2012-08-01

    Three new donor-acceptor-type copolymers (P1-P3) consisting of dicyanofluorene as acceptor and various donor moieties were designed and synthesized. Optoelectronic properties were studied in detail by means of UV-visible absorption and fluorescence spectroscopy, cyclic voltammetry, space-charge-limited current (SCLC), flash-photolysis time-resolved microwave conductivity (FP-TRMC), and density functional theory (DFT). All polymers showed strong absorption in the UV-visible region and the absorption maximum undergoes redshift with an increasing number of thiophene units in the polymer backbone. SCLC analysis showed that the electron mobilities of the polymers in the bulk state were 1 to 2 orders higher than that of the corresponding hole mobilities, which indicated the n-type nature of the materials. By using FP-TRMC, the intrapolymer charge-carrier mobility was assessed and compared with the interpolymer mobility obtained by SCLC. The polymers exhibited good electron-accepting properties sufficiently high enough to oxidize the excited states of regioregular poly(3-hexylthiophene) (P3HT (donor)), as evident from the FP-TRMC analysis. The P3 polymer exhibited the highest FP-TRMC transients in the pristine form as well as when blended with P3HT. Use of these polymers as n-type materials in all-polymer organic solar cells was also explored in combination with P3HT. In accordance with the TRMC results, P3 exhibited superior electron-transport and photovoltaic properties to the other two polymers, which is explained by the distribution of the energy levels of the polymers by using DFT calculations. PMID:22619031

  20. Adhesion of functional layer on polymeric substrates for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Amendola, E.; Cammarano, A.; Pezzuto, M.; Acierno, D.

    2009-06-01

    The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays. Plastic substrates have several distinct advantages, such as ruggedness, robustness, ultra lightness, conformability and impact resistance over glass substrates, which are primarily used in flat panel displays (FPDs) today. However, high transparency, proper surface roughness, low gas permeability and high transparent electrode conductivity of the plastic substrate are required for commercial applications. Polyesters, both amorphous and semicrystalline, are a promising class of commercial polymer for optoelectronic applications. Surface modification of polyester films was performed via chemical solution determining hydrolysis or oxidation. Hydrolysis was carried out by means of sodium hydroxide solution and oxidation by using standard clean 1 (SC-1) of RCA procedure [1]. For this work we have used commercial polymer films of 100μm in thickness: AryLite [2], supplied by Ferrania Imaging Technologies S.p.A. and characterised by very high glass transition temperature, Mylar (Polyethylene Terephthalate PET) and Teonex (Polyethylene Naphthalate PEN) both supplied by Dupont. More over, a bioriented and semicrystalline PET have been used. The aim of this study is modifying the polymer surface to improve the adhesion between organic-inorganic layer. It was found that the NaOH and SC-1 treatment cause a decrease of contact angles. In the present study we have deposited a thin films of amorphous hydrogenated silicon (a-Si:H) and its oxide (SiO2) on a new high temperature polymer substrate, AryLite, by plasma enhanced chemical vapour deposition (PECVD) [3], with a radio frequency plasma system.

  1. Optoelectronic Tool Adds Scale Marks to Photographic Images

    NASA Technical Reports Server (NTRS)

    Stevenson, Charlie; Rivera, Jorge; Youngquist, Robert; Cox, Robert; Haskell, William

    2003-01-01

    A simple, easy-to-use optoelectronic tool projects scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The role played by the scale marks projected by this tool is the same as that of the scale marks on a ruler placed in a scene for the purpose of establishing a length scale. However, this tool offers the advantage that it can put scale marks quickly and safely in any visible location, including a location in which placement of a ruler would be difficult, unsafe, or time-consuming. The tool (see Figure 1) includes an aluminum housing, within which are mounted four laser diodes that operate at a wavelength of 670 nm. The laser diodes are spaced 1 in. (2.54 cm) apart along a baseline. The laser diodes are mounted with setscrews, which are used to adjust their beams to make them all parallel to each other and perpendicular to the baseline. During the adjustment process, the effect of the adjustments is observed by measuring the positions of the laser-beam spots on a target 80 ft (approx.24 m) away. Once the adjustments have been completed, the laser beams define three 1-in. (2.54-cm) intervals and the location of each beam is defined to within 1/16 in. (approx.1.6 mm) at any target distance out to about 80 ft (approx.24 m). The distance between the laser-beam spots as seen in an image is strictly defined only along an axis parallel to the baseline and perpendicular to the laser beam (also perpendicular to the line of sight of the camera, assuming that the camera-to-target distance is much greater than the distance between the tool and the camera lens). If a flat target surface illuminated by the laser beams is tilted with respect to the aforesaid axis, then the distance along the target surface between scale marks is proportional to the secant of the tilt angle. If one knows the tilt angle, one can correct for it. Even

  2. Zinc oxide thin films and nanostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yun, Juhyung

    The objective of this research focuses on investigating optical, electrical, and structural properties of Al doped ZnO (AZO) and developing novel approaches to demonstrate and improve the photovoltaics and photodetectors by introducing AZO nanoscaled structures. ZnO has been widely studied for optoelectronic applications such as light emitting diodes, lasers and photodiodes covering the ultraviolet spectrum because of its wide and direct bandgap and high exciton binding energy. In this research, aluminum doped ZnO films were grown by a dual beam sputtering method which is a combination of RF sputtered ZnO and DC sputtered Al. Various approaches were applied to characterize its optical, electrical and structural modulation in terms of growth parameters and doping parameters. As an n-type dopant, Al doping was controlled from 5x016 to 5x0 20 cm-3 maintaining visible transparency with a wider transparency as Al increased, and high mobility ( 2 ˜ 14 cm2/V.s). For the optoelectric applications, a ZnO/Si heterojunction was demonstrated and studied regarding Al doping effects on the anisotype and isotype junction. An unlikely conventional photovoltaic structure suggested the ZnO/Si solar cell to be advantageous in terms of low cost fabrication process -- low temperature, no diffusion, and large area processing. In this structure, AZO plays a role as a transparent current spreading layer and rectifying junction with silicon (Si). Furthermore, by introducing metal nanostructures inside of the AZO film, light harvesting was enhanced because of plasmonic and light scattering effects ensuring minimized electrical and optical loss within the AZO. To improve photovoltaic performance, a transparent and conductive nanolens array was embedded on ITO film and employed on a conventional Si solar cell using large scale nanoimprint method. The proposed structure provides superior optical transparency beyond 700 nm of wavelength and omnidirectional broadband low reflectivity as well as

  3. Solution processed semiconductor alloy nanowire arrays for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Shimpi, Paresh R.

    NBE UV emission, indicating significantly enhanced inter-diffusion of Mg into ZnO nanowires in this oxygen-rich environment. The successfully developed solution process for semiconductor nanowires alloying has few advantages in low cost, large yield, environmental friendliness and low reaction temperature. This solution processed ZnMgO nanowire arrays could provide a new class of nanoscale building blocks for various optoelectronic devices in UV lighting and visible solar energy harvesting.

  4. Computational design of surfaces, nanostructures and optoelectronic materials

    NASA Astrophysics Data System (ADS)

    Choudhary, Kamal

    Properties of engineering materials are generally influenced by defects such as point defects (vacancies, interstitials, substitutional defects), line defects (dislocations), planar defects (grain boundaries, free surfaces/nanostructures, interfaces, stacking faults) and volume defects (voids). Classical physics based molecular dynamics and quantum physics based density functional theory can be useful in designing materials with controlled defect properties. In this thesis, empirical potential based molecular dynamics was used to study the surface modification of polymers due to energetic polyatomic ion, thermodynamics and mechanics of metal-ceramic interfaces and nanostructures, while density functional theory was used to screen substituents in optoelectronic materials. Firstly, polyatomic ion-beams were deposited on polymer surfaces and the resulting chemical modifications of the surface were examined. In particular, S, SC and SH were deposited on amorphous polystyrene (PS), and C2H, CH3, and C3H5 were deposited on amorphous poly (methyl methacrylate) (PMMA) using molecular dynamics simulations with classical reactive empirical many-body (REBO) potentials. The objective of this work was to elucidate the mechanisms by which the polymer surface modification took place. The results of the work could be used in tailoring the incident energy and/or constituents of ion beam for obtaining a particular chemistry inside the polymer surface. Secondly, a new Al-O-N empirical potential was developed within the charge optimized many body (COMB) formalism. This potential was then used to examine the thermodynamic stability of interfaces and mechanical properties of nanostructures composed of aluminum, its oxide and its nitride. The potentials were tested for these materials based on surface energies, defect energies, bulk phase stability, the mechanical properties of the most stable bulk phase, its phonon properties as well as with a genetic algorithm based evolution theory of

  5. Growth, Optical Properties, and Optimization of Infrared Optoelectronic Materials

    NASA Astrophysics Data System (ADS)

    Webster, Preston Thomas

    High-performance III-V semiconductors based on ternary alloys and superlattice systems are fabricated, studied, and compared for infrared optoelectronic applications. InAsBi is a ternary alloy near the GaSb lattice constant that is not as thoroughly investigated as other III-V alloys and that is challenging to produce as Bi has a tendency to surface segregate and form droplets during growth rather than incorporate. A growth window is identified within which high-quality droplet-free bulk InAsBi is produced and Bi mole fractions up to 6.4% are obtained. Photoluminescence with high internal quantum efficiency is observed from InAs/InAsBi quantum wells. The high structural and optical quality of the InAsBi materials examined demonstrates that bulk, quantum well, and superlattice structures utilizing InAsBi are an important design option for efficient infrared coverage. Another important infrared material system is InAsSb and the strain-balanced InAs/InAsSb superlattice on GaSb. Detailed examination of X-ray diffraction, photoluminescence, and spectroscopic ellipsometry data provides the temperature and composition dependent bandgap of bulk InAsSb. The unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattice is measured and found to significantly impact the analysis of the InAs/InAsSb band alignment. In the analysis of the absorption spectra, the ground state absorption coefficient and transition strength of the superlattice are proportional to the square of the electron-hole wavefunction overlap; wavefunction overlap is therefore a major design parameter in terms of optimizing absorption in these materials. Furthermore in addition to improvements through design optimization, the optical quality of the materials studied is found to be positively enhanced with the use of Bi as a surfactant during molecular beam epitaxy growth. A software tool is developed that calculates and optimizes the miniband structure of semiconductor

  6. Tracking control strategy for the optoelectronic system on the flexible suspended platform based on backstepping method

    NASA Astrophysics Data System (ADS)

    Yu, Wei; Ma, Jiaguang; Xiao, Jing

    2012-10-01

    To improve the optoelectronic tracking ability and rope-hanged platform attitude stability, against the interact effect between rope-hanged platform and optoelectronic system during system tracking process, the optoelectronic system fixed on rope hanged platform simplified dynamic model, according to the system's Lagrange dynamic model, was established. Backstepping method was employed to design an integrated controller for both optoelectronic system azimuth direction steering and platform attitude stabilizing. To deal with model's uncertainty and disturbance, a sliding mode controller form based exponential reaching law was adopted to structure the integrated controller. Simulation experiments simulated an optoelectronic system with 600mm caliber telescope, whose inertia fluctuation is 6%. The maximal control moment is 15Nm. And the external disturbance and internal friction effected together. When the line of sight(LOS) azimuth angular input is a step signal with 1rad amplitude, the response's overshoot is 6%, and the response time is 6.2s, and the steady state error is less than 4×10-4rad. When the input is a sinusoidal signal of 0.2rad amplitude with 0.0318Hz frequency, the LOS azimuth angular error amplitude is 5. 6×10-4rad. It is concluded that the controller designed in this article has excellent ability and can ensure the system's stability.

  7. Integration and packaging of optoelectronic devices; Proceedings of the Meeting, Cambridge, MA, Sept. 18, 19, 1986

    NASA Astrophysics Data System (ADS)

    Hartman, Davis H.; Holman, Robert L.; Skinner, Doyle P.

    Papers are presented on the dynamic alignment of small optical components; an optical alignment robot system; a reliable package for hermetic encapsulation of InGaAsP edge-emitting LEDs; fiber-waveguide inteconnecting technology; a packaging technique to achieve stable single-mode fiber-to-laser alignment; lenses for high efficiency coupling of laser diodes to a single-mode fiber; and the application of glass transition temperature on epoxy resin to fiber optics. Monolithic optoelectronic circuits for high speed optical interconnections; monolithically integrated pin/FET receiver technology; optical interconnections based on multichip integration; and photoneural device structures are examined. Consideration is given to multiple quantum well devices for monolithically integrated optoelectronics; optical waveguides and suface emitters in III-V semiconductors; optical signal interconnection between GaAs integrated circuit chips; the monolithic integration of Si and GaAs devices; channelized optical waveguides on silicon; and black, patternable polyimide coating for monolithic optoelectronic applications.

  8. Construction of optical data processing systems based on optoelectronic liquid crystal elements

    NASA Astrophysics Data System (ADS)

    Tolstik, Alexei; Melnikova, Elena

    2005-11-01

    The methods for the optical signal conversion based on the optoelectronic system "relief grating - liquid crystal" and liquid-crystal (LC) cells using S- or twist-effect have been presented. New schemes forming the basis for realization of bistable LC devices, optoelectronic logic elements and systems of electrically-coupled LC elements intended for the production of laser oscillations at the constant input intensity have been proposed. It has been demonstrated that with the use of varying parameters of optoelectronic feedback one is enabled to set up both regular and chaotic intensity oscillations, to control the frequency and form of these oscillations, to realize functional changes of logic elements. The developed LC systems have been introduced into the educational practice of students mastering modem information techniques.

  9. New processing approach for grafting optoelectronic devices and applications to multichip modules

    NASA Astrophysics Data System (ADS)

    Morrison, Charles B.; Strijek, Ronald L.; Bechtel, James H.

    1997-04-01

    Epitaxial liftoff and grating of multiple thin integrated circuit-sized semiconductor films each containing over a hundred discrete devices confirms that multichip modules can be produced using this technology. the use of epitaxial liftoff membranes containing electronic and optoelectronic circuits and devices will provide (1) highly improved thermal management, (2) much higher density packaging, and (3) applications polylithically interconnecting electronic mixed-signal and optoelectronic devices. Bond strength data of thin epitaxial membranes grafted onto high thermal conductivity substrates quantifies for the first time to our knowledge the adhesion quality of van der Waals forces. In addition, the handling of very small discrete devices by means of integrated circuit-sized thin films permits the use of commercial off-the-shelf hardware in the development of an automated manufacturing assembly tool. This enabling technology will provide a manufacturing path to continue to commercialize new models of high performance optoelectronic modules with advanced features including higher data rates and increased function.

  10. Standard Cell-Based Implementation of a Digital Optoelectronic Neural-Network Hardware

    NASA Astrophysics Data System (ADS)

    Maier, Klaus D.; Beckstein, Clemens; Blickhan, Reinhard; Erhard, Werner

    2001-03-01

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

  11. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  12. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  13. Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

    NASA Astrophysics Data System (ADS)

    Congxin, Xia; Jingbo, Li

    2016-05-01

    Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.

  14. Standard cell-based implementation of a digital optoelectronic neural-network hardware.

    PubMed

    Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

    2001-03-10

    A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed. PMID:18357111

  15. Accelerating tomorrow's opto-electronic technologies: a comprehensive introduction to advanced optoelectronic materials and devices in the National Hi-Tech R&D Plan (863-Plan)

    NASA Astrophysics Data System (ADS)

    Jiang, Shan; Chen, Haoming; Ren, Xiaomin; Wang, Zhigong; Qian, Longsheng; Zhang, Rong; Feng, Songlin; Yang, Hui; Xu, Ningsheng

    2004-05-01

    The National Hi-Tech R&D Program (the 863-Program) is to enhance China's international competitiveness and improve China's overall capability of R&D in high technology and to bridge the gap between the laboratory and the marketplace. Advanced Optoelectronic Materials and Devices are one of the technology areas strategically important to China's information industry. It has been one of the major priority research fields funded by the 863 Program even since 1987 when the plan was first initiated. From the viewpoint of Priority Expert Group (PEG), this paper will give a comprehensive introduction to advanced optoelectronic materials and devices in the national 863-Program during the current five years period (up to 2005) which includes the main aims and goals and especially the main content of each subject.

  16. Aligned ZnO nanorod arrays growth on GaN QDs for excellent optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sang, Dandan; Li, Hongdong; Wang, Qinglin

    2016-02-01

    Uniformly aligned ZnO nanorod (NR) arrays grown on GaN quantum dots (QDs) as preferred nucleation sites are imperative for designing field emission emitters, ultraviolet photodetectors and light-emitting diodes for a wide range of new optoelectronic applications. In a recent study (2015 Nanotechnology 26 415601), Qi et al reported a novel method of fabricating ZnO NRs arrays with uniform shape, the density of which is easily tunable by adjusting the density of GaN QDs. This approach opens a door to obtaining a combination of 0D and 1D structures for optoelectronic applications.

  17. Improving the security of optoelectronic delayed feedback system by parameter modulation and system coupling

    NASA Astrophysics Data System (ADS)

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-02-01

    A coupled system with varying parameters is proposed to improve the security of optoelectronic delayed feedback system. This system is coupled by two parameter-varied optoelectronic delayed feedback systems with chaotic modulation. Dynamics performance results show that this system has a higher complexity compared to the original one. Furthermore, this system can conceal the time delay effectively against the autocorrelation function and delayed mutual information method and can increase the dimension space of secure parameters to resist brute-force attack by introducing the digital chaotic systems.

  18. Commercialization issues and funding opportunities for high-performance optoelectronic computing modules

    NASA Astrophysics Data System (ADS)

    Hessenbruch, John M.; Guilfoyle, Peter S.

    1997-01-01

    Low power, optoelectronic integrated circuits are being developed for high speed switching and data processing applications. These high performance optoelectronic computing modules consist of three primary components: vertical cavity surface emitting lasers, diffractive optical interconnect elements, and detector/amplifier/laser driver arrays. Following the design and fabrication of an HPOC module prototype, selected commercial funding sources will be evaluated to support a product development stage. These include the formation of a strategic alliance with one or more microprocessor or telecommunications vendors, and/or equity investment from one or more venture capital firms.

  19. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    PubMed Central

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  20. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms.

    PubMed

    Pinkston, T M; Raksapatcharawong, M; Choi, Y

    1998-01-10

    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented. PMID:18268583

  1. A new switching parameter varying optoelectronic delayed feedback model with computer simulation

    NASA Astrophysics Data System (ADS)

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-02-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security.

  2. The studying of solar cell process by using optoelectronic measurement system

    NASA Astrophysics Data System (ADS)

    Wang, Hongfang; Lang, Fang; Shi, Jinchao; Li, Gaofei; Hu, Zhiyan; Xiong, Jingfeng

    2013-12-01

    For the optical anti-reflection coating (ARC) and passivation properties, the relationship between parameters of PECVD and solar cell photoelectricity properties is investigated in this work. Solar cell's photoelectricity properties are studied by using various optoelectronic measurement systems. It is found that minority carrier recombination can be reduced by changing the parameters of PECVD, specially tuning pressure parameter, and the hydrogen content is different as the gas total flow changing if the temperature and pressure no changes. And also the hydrogen content can be calculated by absorption spectrum being tested with optoelectronic measurement system.

  3. A new switching parameter varying optoelectronic delayed feedback model with computer simulation.

    PubMed

    Liu, Lingfeng; Miao, Suoxia; Cheng, Mengfan; Gao, Xiaojing

    2016-01-01

    In this paper, a new switching parameter varying optoelectronic delayed feedback model is proposed and analyzed by computer simulation. This model is switching between two parameter varying optoelectronic delayed feedback models based on chaotic pseudorandom sequences. Complexity performance results show that this model has a high complexity compared to the original model. Furthermore, this model can conceal the time delay effectively against the auto-correlation function, delayed mutual information and permutation information analysis methods, and can extent the key space, which greatly improve its security. PMID:26923101

  4. Study on Over-Sampling for Imager

    NASA Technical Reports Server (NTRS)

    Kigawa, Seiichiro; Sullivan, Pamela C.

    1998-01-01

    This report describes the potential improvement of the effective ground resolution of MTSAT (Multi-functional Transport Satellite) Imager. The IFOV (Instantaneous Field of View) of MTSAT Imager is 4 km for infrared and 1 km visible. A combination of some images acquired by the MTSAT Imager could generate 2 km-latticed infrared images. Furthermore, it is possible to generate an effective 2 km IFOV image by the enhancement of the 2 km-latticed image using Digital Signal Processing. This report also mentions the on-orbit demonstration of this concept.

  5. Hybridization, assembling, and testing of miniaturized optoelectronic modules for sensors and microsystems

    NASA Astrophysics Data System (ADS)

    Kopola, Harri K.; Karioja, Pentti; Rusanen, Outi; Lehto, Heikki; Lammasniemi, Jorma

    1998-03-01

    This paper presents an overview of the research and development work on packaging and manufacturing different optoelectronic modules and microsystems for spectroscopic applications at VTT Electronics. Four different spectrometer concepts are analyzed: a multiwavelength detector module, an LED array spectrometer module, a PGP-spectrograph and an IR- spectrometer on silicon. The construction, main features, packaging concepts and performance are reviewed.

  6. Functional inks of graphene, metal dichalcogenides and black phosphorus for photonics and (opto)electronics

    NASA Astrophysics Data System (ADS)

    Howe, Richard C. T.; Hu, Guohua; Yang, Zongyin; Hasan, Tawfique

    2015-08-01

    We discuss the emerging role of solution processing and functional ink formulation in the fabrication of devices based on two dimensional (2d) materials. By drawing on examples from our research, we show that these inks allow 2d materials to be exploited in a wide variety of applications, including in photonics and (opto)electronics.

  7. Computational Design of Optoelectronic and Spintronic Devices in Graphene Nanoribbon Heterojunctions

    NASA Astrophysics Data System (ADS)

    Prakash, Avinash; Ertekin, Elif

    2014-03-01

    Graphene is well known to possess outstanding electronic and structural properties. The potential of two-dimensional materials in creating next-generation optoelectronic computing systems has been exhibited both computationally and experimentally. In this contribution, we use first-principles total energy electronic structure methods to develop design principles for optoelectronic devices, such as resonant tunneling diodes and double heterostructure lasers, in nanostructured graphene. A density functional theory approach utilizing non-equilibrium Green's functions and the Landauer-Büttiker formalism for ballistic transport provides the spin-polarized transmission spectrum and I-V characteristics of the devices. These calculations can quantify the effects of nanoribbon topology on the device characteristics. We report negative differential resistance and spin filtering effects that can be engineered in novel logic circuits based on resonant tunneling. Our results provide the impetus to fabricate optoelectronic and spintronic devices from monomer organic molecules via bottom-up chemical synthesis methods. We elucidate the applicability of graphene nanoribbons in optoelectronic molecular computing.

  8. Untangling the isotopic effects of deuteration on the optoelectronic properties of conducting polymers

    SciTech Connect

    Shao, Ming; Keum, Jong Kahk; Chen, Jihua; Chen, Wei; Browning, Jim; Jakowski, Jacek; Sumpter, Bobby G; Ivanov, Ilia N; Ma, Yingzhong; Rouleau, Christopher M; Smith, Sean C; Geohegan, David B; Hong, Kunlun; Xiao, Kai

    2014-01-01

    The attractive optoelectronic properties of conducting polymers depend sensitively upon intra- and inter-polymer chain interactions, and therefore new methods to manipulate these interactions are continually being pursued. Here, we report a study of the isotopic effects of deuterium substitution on the structure, morphology, and optoelectronic properties of regioregular poly(3-hexylthiophene)s (P3HT) with an approach that combines the synthesis of deuterated materials, optoelectronic properties measurements, theoretical simulation, and neutron scattering. Selective substitutions of deuterium on the backbone or side-chains of P3HT result in distinct optoelectronic responses in P3HT/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) photovoltaics. Specifically, the weak non-covalent intermolecular interactions induced by the main-chain deuteration are shown to change the film crystallinity and morphology of P3HT/PCBM blends, and consequently reduce the short circuit current. However, decreased electronic coupling, the formation of a charge transfer state, and increased electron-phonon coupling resulting from side chain deuteration are shown to induce a remarkable reduction in open circuit voltage.

  9. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-20

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International...

  10. 78 FR 16296 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-14

    ... optic communications, components thereof, and products containing the same by reason of infringement of certain claims of U.S. Patent Nos. 6,947,456 and 5,596,595 (collectively, ``Asserted Patents''). 77 FR... COMMISSION Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and...

  11. The isotopic effects of deuteration on optoelectronic properties of conducting polymers

    NASA Astrophysics Data System (ADS)

    Shao, Ming; Keum, Jong; Chen, Jihua; He, Youjun; Chen, Wei; Browning, James F.; Jakowski, Jacek; Sumpter, Bobby G.; Ivanov, Ilia N.; Ma, Ying-Zhong; Rouleau, Christopher M.; Smith, Sean C.; Geohegan, David B.; Hong, Kunlun; Xiao, Kai

    2014-01-01

    The attractive optoelectronic properties of conducting polymers depend sensitively upon intra- and inter-polymer chain interactions, and therefore new methods to manipulate these interactions are continually being pursued. Here, we report a study of the isotopic effects of deuterium substitution on the structure, morphology and optoelectronic properties of regioregular poly(3-hexylthiophene)s with an approach that combines the synthesis of deuterated materials, optoelectronic properties measurements, theoretical simulation and neutron scattering. Selective substitutions of deuterium on the backbone or side-chains of poly(3-hexylthiophene)s result in distinct optoelectronic responses in poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) photovoltaics. Specifically, the weak non-covalent intermolecular interactions induced by the main-chain deuteration are shown to change the film crystallinity and morphology of the active layer, consequently reducing the short-circuit current. However, side-chain deuteration does not significantly modify the film morphology but causes a decreased electronic coupling, the formation of a charge transfer state, and increased electron-phonon coupling, leading to a remarkable reduction in the open circuit voltage.

  12. Analytical model for crosstalk analysis of optoelectronic transmitter modules for optical interconnects

    NASA Astrophysics Data System (ADS)

    Ukaegbu, Ikechi Augustine; Sangirov, Jamshid; Cho, Mu Hee; Lee, Tae-Woo; Park, Hyo-Hoon

    2011-07-01

    In this paper, a crosstalk expression and equivalent circuit model have been proposed based on RLC line model and interconnect parameters for wire-bonded and flip-chip bonded multichannel optoelectronic modules. The analytical expression and model are accurate for computing crosstalk of interconnects used in chip packaging. In addition, full-wave simulation and experimental results from total crosstalk measurement are discussed.

  13. 40 GSPS opto-electronic polyphase analog-to-digital converter

    NASA Astrophysics Data System (ADS)

    Villa, Carlos; Donkor, Eric; Hayduk, Michael; Bussjager, Rebecca

    2007-04-01

    A novel opto-electronic polyphase analog-to-digital converter scheme that entails parallel optical sampling of different phases of an input analog signal is presented. With this scheme higher sampling rate can be attained by scaling. We demonstrate the basic tenets of this approach by upscaling a 160MSPS optoelectronic analog-to-digital ADC system to design and implement a 40.96GSPS four-channel polyphase optoelectronic analog-to-digital system. An optoelectronic divide-by-two decimation technique is implemented for demultiplexing digital samples having a repetition rate f into its even and odd subsamples with each subsample having a repetition rate of f/2. A two stage concatenation of the basic divide-by-two decimation scheme is employed to demultiplex the 40.96GSPS sampled RF signals into 8 channels of demultiplexed data, each channel having a data-rate of 5.12GSPS. Detailed design parameters and experimental results are presented for both the 160MSPS and the 40GSPS, including the design and implementation of optical clock networks, polyphase RF sampling networks, and decimation or demultiplexing networks. In addition, the electronic quantization network for the 160MSPS ADC system is presented. The 160MSPS system was found to have effective bit-resolution of 6.97, third-harmonic distortion of 43.73dB, signal-to-noise-distortion of 43.73dB, and spurious free dynamic range of 41dB.

  14. Diagnostic opto-electronic system for measuring physical and biological characteristics of the skin in vivo

    NASA Astrophysics Data System (ADS)

    Makara, Ivanna V.; Kozhukhar, Oleksander T.; Komada, Pawel; Dussembayeva, Shynar

    2015-12-01

    Actuality development of optoelectronic rapid diagnostic system for measuring physical and biological characteristics of the skin in vivo with radiation of electromagnetic radiation in the optical range to obtain objective information on the spatial distribution of biochemical and morphological and anatomical components are different for state standards and pathology.

  15. Molecularly Designed, Nitrogen-Functionalized Graphene Quantum Dots for Optoelectronic Devices.

    PubMed

    Tetsuka, Hiroyuki; Nagoya, Akihiro; Fukusumi, Takanori; Matsui, Takayuki

    2016-06-01

    Nitrogen-functionalized graphene quantum dots (NGQDs) with tailorable optical properties are prepared by a versatile technique, which allows the highest occupied molecular orbital/lowest unoccupied molecular orbital energy levels and energy gaps to be continuously varied. The integration of NGQD layers into the structures significantly improves the performance of optoelectronic devices. PMID:27042953

  16. Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Deng, Hui; Dong, Dongdong; Qiao, Keke; Bu, Lingling; Li, Bing; Yang, Dun; Wang, Hong-En; Cheng, Yibing; Zhao, Zhixin; Tang, Jiang; Song, Haisheng

    2015-02-01

    Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic NW based PD performances. An energy conversion efficiency of ~2.5% has been obtained for NW film based solar cells. The facile fabrication process, controllable distribution and optoelectronic applications make the OIP NWs promising building blocks for future optoelectronics, especially for low dimensional devices.Organolead halide perovskites are becoming intriguing materials applied in optoelectronics. In the present work, organolead iodide perovskite (OIP) nanowires (NWs) have been fabricated by a one step self-assembly method. The controllable NW distributions were implemented by a series of facile techniques: monolayer and small diameter NWs were prepared by precursor concentration tuning; NW patterning was achieved via selected area treatment assisted by a mask; NW alignment was implemented by modified evaporation-induced self-assembly (EISA). The synthesized multifunctional NWs were further applied in photodetectors (PDs) and solar cells as application demos. The PD performances have reached 1.32 AW-1 for responsivity, 2.5 × 1012 Jones for detectivity and 0.3 ms for response speed, superior to OIP films and other typical inorganic

  17. Optoelectronic array that computes error and weight modification for a bipolar optical neural network

    NASA Astrophysics Data System (ADS)

    Mao, C. C.; Johnson, K. M.

    1993-03-01

    The design, fabrication, and results of an optoelectronic device that computes the weight changes required by the delta-rule learning algorithm and encodes the result on a pair of optical beams are presented. This very-large-scale-integrated ferroelectric liquid-crystal array was designed specifically to permit bipolar optoelectronic neural network to learn without the limitations of an external controlling computer. The device contains 64 smart pixels, which represent the processing elements in an artificial neural network. Each processing element consists of two photodetectors, a current-to-voltage converter, two comparators, two switches, and two output liquid-crystal modulating pads. The device has a measured contrast ratio of 10:1, a 10-to-90-percent rise time of 350 microsec and a 90-to-10-percent fall time of 150 microsec.

  18. Optoelectronic devices based on MoTe2 p-n junction

    NASA Astrophysics Data System (ADS)

    Bie, Ya-Qing; Heuck, Mikkel; Furchi, Marco; Grosso, Gabriele; Zheng, Jiabao; Cao, Yuan; Navarro-Moratalla, Efren; Englund, Dirk; Jarillo-Herrero, Pablo

    2D transition metal dichalcogenides (2D-TMD), such as MoS2, have been verified with many remarkable physical properties, which include an indirect to direct band transition as a function of thickness and a valley dependent spin polarization. One of the 2D-TMD family members, 2H-MoTe2 has been shown to be a direct bandgap semiconductor as a monolayer and bilayer with a near infrared (NIR) bandgap of about 1.1eV. However, optoelectronic devices based on MoTe2 were so far not experimentally demonstrated. Here, we will present a high on-off ratio MoTe2 p-n junction enabled by a hexagonal boron nitride encapsulation technique. Our study of the MoTe2 p-n junction devices sheds light on designing efficient NIR optoelectronic devices such as photodetectors and energy harvesting cells and light emitters.

  19. Optoelectronic Properties of CuInS2 Nanocrystals and Their Origin.

    PubMed

    Leach, Alice D P; Macdonald, Janet E

    2016-02-01

    The capacity of fluorescent colloidal semiconductor nanocrystals for commercial application has led to the development of nanocrystals with nontoxic constituent elements as replacements for the currently available Cd- and Pb-containing systems. CuInS2 is a good candidate material because of its direct band gap in the near-infrared spectral region and large optical absorption coefficient. The ternary nature, flexible stoichiometry, and different crystal structures of CuInS2 lead to a range of optoelectronic properties, which have been challenging to elucidate. In this Perspective, the optoelectronic properties of CuInS2 nanocrystals are described and what is known of their origin is discussed. We begin with an overview of their synthesis, structure, and mechanism of formation. A complete discussion of the tunable luminescence properties and the radiative decay mechanism of this system is then presented. Finally, progress toward application of these "green" nanocrystals is summarized. PMID:26758860

  20. Self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators.

    PubMed

    Dai, Jian; Xu, Xingyuan; Wu, Zhongle; Dai, Yitang; Yin, Feifei; Zhou, Yue; Li, Jianqiang; Xu, Kun

    2015-11-16

    An ultraflat self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators was proposed and experimentally demonstrated. By incorporating the optoelectronic oscillation loop with cascaded modulators into the optical frequency comb generator, 11 ultraflat comb lines would be generated, and the frequency spacing is equal to the oscillation frequency of the OEO. 10 and 12GHz optical frequency combs are demonstrated with the spectral power variation below 0.82dB and 0.93dB respectively. The corresponding spectral pure microwave source are also generated and evaluated. The corresponding single-sideband phase noise are as low as -122dBc/Hz and -115 dBc/Hz at 10 kHz offset frequency. PMID:26698482

  1. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

    NASA Astrophysics Data System (ADS)

    Eng, Png Ching; Song, Sun; Ping, Bai

    2015-01-01

    Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs) have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc.) and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

  2. Optoelectronic tweezers system for single cell manipulation and fluorescence imaging of live immune cells.

    PubMed

    Jeorrett, Abigail H; Neale, Steven L; Massoubre, David; Gu, Erdan; Henderson, Robert K; Millington, Owain; Mathieson, Keith; Dawson, Martin D

    2014-01-27

    A compact optoelectronic tweezers system for combined cell manipulation and analysis is presented. CMOS-controlled gallium nitride micro-LED arrays are used to provide simultaneous spatio-temporal control of dielectrophoresis traps within an optoelectronic tweezers device and fluorescence imaging of contrasting dye labelled cells. This capability provides direct identification, selection and controlled interaction of single T-lymphocytes and dendritic cells. The trap strength and profile for two emission wavelengths of micro-LED array have been measured and a maximum trapping force of 13.1 and 7.6 pN was achieved for projected micro-LED devices emitting at λmax 520 and 450 nm, respectively. A potential application in biological research is demonstrated through the controlled interaction of live immune cells where there is potential for this method of OET to be implemented as a compact device. PMID:24515144

  3. Optoelectronic Crystal of Artificial Atoms in Strain-Textured MoS2

    NASA Astrophysics Data System (ADS)

    Contryman, Alex W.; Li, Hong; Fragapane, Alex H.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffrey M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Zheng, Xiaolin; Manoharan, Hari C.

    2015-03-01

    The atomically thin semiconductor MoS2 possesses exceptional strength and a strain-tunable band gap. When subjected to biaxial elastic strain, monolayer MoS2 can embed wide band gap variations overlapping the visible spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimic the Coulomb potential in a mesoscopic atom. We have realized and confirmed this ``artificial atom'' concept via capillary-pressure-induced nanoindentation of monolayer MoS2 from a tailored nanostructure. We demonstrate that a synthetic lattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funneling of photogenerated excitons to points of maximum strain at the atom centers. Such 2D semiconductors with spatially textured band gaps represent a new class of materials which may find applications in next-generation optoelectronics or photovoltaics.

  4. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

    NASA Astrophysics Data System (ADS)

    Li, Hong; Contryman, Alex W.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Manoharan, Hari C.; Zheng, Xiaolin

    2015-06-01

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this `artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics.

  5. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    NASA Astrophysics Data System (ADS)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  6. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    PubMed Central

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  7. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector

    NASA Astrophysics Data System (ADS)

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-01

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal–semiconductor–metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW‑1 and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 1010 cm Hz1/2 W‑1 at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum.

  8. Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals

    NASA Astrophysics Data System (ADS)

    Parola, S.; Quesnel, E.; Muffato, V.; Xie, L.; Leifer, K.; Coignus, J.; Slaoui, A.

    2013-07-01

    We investigated the possibility of using physical vapour deposited Ge nanocrystals (NCs) in optoelectronic devices such as solar cells. We have prepared p-i-n heterojunctions based on p+-doped Si substrate/undoped Ge NCs/ZnO:Al layer stacks and their optoelectronic properties were characterised. Under light, the generation of photo-carriers from the Ge NCs themselves was demonstrated. The photovoltaic behaviour of the p-i-n structure was also highlighted, with a measured Voc of 224 mV compared to 580 mV in theory. The discrepancy between theory and experiment was discussed on the basis of TEM observations, optical and carrier generation measurements as well as modelling.

  9. Development of implantable optoelectronic module for optical brain tissue stimulation in freely moving mice

    NASA Astrophysics Data System (ADS)

    Rusakov, Konstantin; Czajkowski, Rafał; Kaźmierczak, Andrzej

    2015-09-01

    The research aims to design and manufacture of wireless optogenetics devices for freely moving animals in cages IntelliCage system. The purpose of the device is to stimulate specific brain regions using light. The constructed device consists of a light source and optical fibre structure responsible for delivering light into the corresponding region of the brain of the animal. The size of the animal (mouse) and the fact that it is freely moving imposes substantial limitations with respect to the size and weight of the optoelectronic device. The present paper describes research on optical fibre structure fabrication, assembling it to the small size (less than 500 × 500 μm2 top surface) LED chip and experimental validation of the optoelectronic stimulator.

  10. Design of a dual-axis optoelectronic level for precision angle measurements

    NASA Astrophysics Data System (ADS)

    Fan, Kuang-Chao; Wang, Tsung-Han; Lin, Sheng-Yi; Liu, Yen-Chih

    2011-05-01

    The accuracy of machine tools is mainly determined by angular errors during linear motion according to the well-known Abbe principle. Precision angle measurement is important to precision machines. This paper presents the theory and experiments of a new dual-axis optoelectronic level with low cost and high precision. The system adopts a commercial DVD pickup head as the angle sensor in association with the double-layer pendulum mechanism for two-axis swings, respectively. In data processing with a microprocessor, the measured angles of both axes can be displayed on an LCD or exported to an external PC. Calibrated by a triple-beam laser angular interferometer, the error of the dual-axis optoelectronic level is better than ±0.7 arcsec in the measuring range of ±30 arcsec, and the settling time is within 0.5 s. Experiments show the applicability to the inspection of precision machines.

  11. A tunable hemispherical platform for non-stretching curved flexible electronics and optoelectronics

    SciTech Connect

    Zhuang, Jinda; Ju, Y. Sungtaek

    2014-07-28

    One major challenge in incorporating flexible electronics or optoelectronics on curved surfaces is the requirement of significant stretchability. We report a tunable platform for incorporating flexible and yet non-stretching device layers on a hemisphere. In this configuration, an array of planar petals contractively maps onto the surface of an inflatable hemisphere through elastocapillary interactions mediated by an interface liquid. A mechanical model is developed to elucidate the dependence of the conformality of the petal structures on their elastic modulus and thickness and the liquid surface tension. The modeling results are validated against experimental results obtained using petal structures of different thicknesses, restoring elastic spring elements of different spring constants, and liquids with different surface tension coefficients. Our platform will enable facile integration of non-stretching electronic and optoelectronic components prepared using established planar fabrication techniques on tunable hemispherical surfaces.

  12. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion.

    PubMed

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene's unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  13. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    NASA Astrophysics Data System (ADS)

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-08-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

  14. Optoelectronic ally automated system for carbon nanotubes synthesis via arc-discharge in solution

    SciTech Connect

    Bera, Debasis; Brinley, Erik; Kuiry, Suresh C.; McCutchen, Matthew; Seal, Sudipta; Heinrich, Helge; Kabes, Bradley

    2005-03-01

    The method of arc discharge in the solution is unique and inexpensive route for synthesis of the carbon nanotubes (CNTs), carbon onions, and other carbon nanostructures. Such a method can be used for in situ synthesis of CNTs decorated with nanoparticles. Herein, we report a simple and inexpensive optoelectronically automated system for arc discharge in solution synthesis of CNTs. The optoelectronic system maintains a constant gap between the two electrodes allowing a continuous synthesis of the carbon nanostructures. The system operates in a feedback loop consisting of an electrode-gap detector and an analog electronic unit, as controller. This computerized feeding system of the anode was used for in situ nanoparticles incorporated CNTs. For example, we have successfully decorated CNTs with ceria, silica, and palladium nanoparticles. Characterizations of nanostructures are performed using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy dispersive spectroscopy, and scanning electron microscopy.

  15. Optoelectronically automated system for carbon nanotubes synthesis via arc-discharge in solution

    NASA Astrophysics Data System (ADS)

    Bera, Debasis; Brinley, Erik; Kuiry, Suresh C.; McCutchen, Matthew; Seal, Sudipta; Heinrich, Helge; Kabes, Bradley

    2005-03-01

    The method of arc discharge in the solution is unique and inexpensive route for synthesis of the carbon nanotubes (CNTs), carbon onions, and other carbon nanostructures. Such a method can be used for in situ synthesis of CNTs decorated with nanoparticles. Herein, we report a simple and inexpensive optoelectronically automated system for arc discharge in solution synthesis of CNTs. The optoelectronic system maintains a constant gap between the two electrodes allowing a continuous synthesis of the carbon nanostructures. The system operates in a feedback loop consisting of an electrode-gap detector and an analog electronic unit, as controller. This computerized feeding system of the anode was used for in situ nanoparticles incorporated CNTs. For example, we have successfully decorated CNTs with ceria, silica, and palladium nanoparticles. Characterizations of nanostructures are performed using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy dispersive spectroscopy, and scanning electron microscopy.

  16. Marriage of heavy main group elements with π-conjugated materials for optoelectronic applications.

    PubMed

    Parke, Sarah M; Boone, Michael P; Rivard, Eric

    2016-08-01

    This review article summarizes recent progress in the synthesis and optoelectronic properties of conjugated materials containing heavy main group elements from Group 13-16 as integral components. As will be discussed, the introduction of these elements can promote novel phosphorescent behavior and support desirable molecular and polymeric properties such as low optical band gaps and high charge mobilities for photovoltaic and thin film transistor applications. PMID:27344980

  17. Optodic bonding of optoelectronic components in transparent polymer substrates-based flexible circuit systems

    NASA Astrophysics Data System (ADS)

    Wang, Yixiao; Akin, Meriem; Jogschies, Lisa; Overmeyer, Ludger; Rissing, Lutz

    2015-02-01

    In the field of modern information technology, optoelectronics are being widely used, and play an increasingly important role. Meanwhile, the demand for more flexible circuit carriers is rapidly growing, since flexibility facilitates the realization of diverse functions and applications. As a potential candidate, transparent polymer substrates with a thickness of about a hundred micrometers by virtue of their low cost and sufficient flexibility are getting more attention. Thus, accomplishing an integration of optoelectronic components into polymer based flexible circuit systems increasingly is becoming an attractive research topic, which is of great significance for future information transmission and processing. We are committed to developing a new microchip bonding process to realize it. Taking into account the fact that most economical transparent polymer substrates can only be processed with restricted thermal loading, we designed a so-called optode instead of a widely adopted thermode. We employ UV-curing adhesives as bonding materials; accordingly, the optode is equipped with a UV irradiation source. An investigation of commercial optoelectronic components is conducted, in which their dimensions and structures are studied. While selecting appropriate transparent polymer substrates, we take their characteristics such as UV transmission degree, glass transition temperature, etc. as key criterions, and choose polyethylene terephthalate (PET) and polymethyl methacrylate (PMMA) as carrier materials. Besides bonding achieved through the use of adhesives cured by the optode, underfill is accordingly employed to enhance the reliability of the integration. We deposit electrical interconnects onto the polymeric substrate to be able to bring the optoelectronic components into electrical operation. In order to enlarge the optical coupling zone from component to substrate within the proximity of the adhesive or underfill, we employ transparent interconnects made of indium

  18. Boosting the Performance of Organic Optoelectronic Devices Using Multiple-Patterned Plasmonic Nanostructures.

    PubMed

    Lee, Yoon Ho; Lee, Tae Kyung; Song, Inho; Yu, Hojeong; Lee, Jiwon; Ko, Hyunhyub; Kwak, Sang Kyu; Oh, Joon Hak

    2016-07-01

    Multiple-patterned nanostructures prepared by synergistically combining block-copolymer lithography with nano-imprinting lithography have been used as back reflectors for enhancing light absorption in organic optoelectronic devices. The multiple-patterned electrodes have significantly boosted the performance of organic photovoltaics and photo-transistors, owed to the highly effective light scattering and plasmonic effects, extending the range of their practical applications. PMID:27146332

  19. GeSi strained nanostructure self-assembly for nano- and opto-electronics.

    SciTech Connect

    Means, Joel L.; Floro, Jerrold Anthony

    2001-07-01

    Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.

  20. [Quality improvement of the medical images in digital and optoelectronic devices].

    PubMed

    Shlychkoiv, V I; Shchukin, I V

    1981-01-01

    The realization of image processing algorithms in a hybrid optoelectronic device is discussed. The linear part of the algorithm is carried out in the optical block, and the nonlinear part of the algorithm in the electronic processing block of the device. These studies indicate the expediency of using the optical methods for processing the images of medico-biological objects to facilitate their visual analysis. PMID:7321818

  1. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics. PMID:26256639

  2. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  3. Visual pattern recognition network: its training algorithm and its optoelectronic architecture

    NASA Astrophysics Data System (ADS)

    Wang, Ning; Liu, Liren

    1996-07-01

    A visual pattern recognition network and its training algorithm are proposed. The network constructed of a one-layer morphology network and a two-layer modified Hamming net. This visual network can implement invariant pattern recognition with respect to image translation and size projection. After supervised learning takes place, the visual network extracts image features and classifies patterns much the same as living beings do. Moreover we set up its optoelectronic architecture for real-time pattern recognition.

  4. Spectral matching factors between low-light-level and infrared fusion optoelectronic detector and objects

    NASA Astrophysics Data System (ADS)

    Liu, Lei; Fan, Yinghao; Chang, Benkang

    2009-09-01

    According to the response of photoelectric device to a light source, the formula of spectral matching factor of low-lightlevel and infrared fusion optoelectronic detector-object combination is deduced. The spectral matching factors of photo cathode and infrared detector for green vegetation are calculated and compared. Through the analysis of results it shows that spectral matching factor has influence on the performance of low light level and infrared fusion night vision system.

  5. Analysis of the Influence of Thermal Conditions on the Operation of Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Ushakovskaya, E. D.

    2013-07-01

    The optoelectronic device has been considered from the viewpoint of system analysis. It has been shown that thermal conditions influence the transfer function of this system and, as a consequence, the desired signal. Moreover, the self-radiation of the device's elements, which also leads to a change in the output signal of the device, depends on the thermal conditions. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 86, No. 4, pp. 894-904, July-August, 2013.

  6. Dual-wavelength method and optoelectronic sensor for online monitoring of the efficiency of dialysis treatment

    NASA Astrophysics Data System (ADS)

    Vasilevsky, A. M.; Konoplev, G. A.; Stepanova, O. S.; Zemchenkov, A. Yu; Gerasimchuk, R. P.; Frorip, A.

    2015-11-01

    The absorption spectra of effluent dialysate in the ultraviolet region were investigated. A novel dual-wavelength spectrophotometric method for uric acid determination in effluent dialysate and an optoelectronic sensor based on UV LED were developed. Clinical trials of the proposed sensor were carried out in the dialysis unit of St. Petersburg Mariinsky Hospital. The relative error of measurement for the concentration of uric acid does not exceed 10%.

  7. Distributed feedback laser with optoelectronic tunability in dye-doped cholesteric liquid crystal with coated photoconductive layer

    NASA Astrophysics Data System (ADS)

    Lee, C.-R.; Huang, S.-C.; Lin, S.-H.; Lin, Z.-Y.; Huang, S.-Y.; Mo, T.-S.

    2011-12-01

    This work investigates, for the first time, an optoelectronically tunable distributed feedback laser that is based on a planar DDCLC cell with a coated photoconductive (PC) layer. Experimental results show that the CLC reflection band and the lasing wavelength of the DDCLC can both be tuned optoelectronically by varying the intensity of one irradiating CW green beam or the magnitude of the applied dc voltage. The tunability of the DDCLC laser depends on the controllability of the optoelectronic properties of the PC layer and, therefore, on the voltage dropping on the CLC layer. Therefore, the CLC pitch can be controlled by exploiting the optoelectronically induced electrohydrodynamic effect which causes the spatially periodic deformation of the CLC structure. In addition, the dependences for other critical lasing parameters, e.g., energy threshold, lasing efficiency, and lasing linewidth, on external controlling signals are also measured and discussed in the current study.

  8. Synthesis of Cu2SnSe3-Au heteronanostructures with optoelectronic and photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Ding, Tao; Chen, Guihuan; Zhang, Li; Yu, Yongqiang; Yang, Qing

    2015-09-01

    Cu2SnSe3-Au heteronanostructures have been successfully synthesized for the first time using a seed-mediated growth method. Such new Cu2SnSe3-Au heteronanostructures demonstrate enhanced and broadened optical absorption in the Vis-NIR region. We have also investigated the optoelectronic and photocatalytic properties of the Cu2SnSe3-Au heteronanostructures and proposed a mechanism to illustrate the improved photocurrent and photocatalytic performance as compared to bare Cu2SnSe3.Cu2SnSe3-Au heteronanostructures have been successfully synthesized for the first time using a seed-mediated growth method. Such new Cu2SnSe3-Au heteronanostructures demonstrate enhanced and broadened optical absorption in the Vis-NIR region. We have also investigated the optoelectronic and photocatalytic properties of the Cu2SnSe3-Au heteronanostructures and proposed a mechanism to illustrate the improved photocurrent and photocatalytic performance as compared to bare Cu2SnSe3. Electronic supplementary information (ESI) available: Experimental details including materials, sample preparation, characterization, size-distribution histogram, XRD, TEM, EDX, ATR-FTIR, ICP-AES, the influence of different Au loading values on the optical and optoelectronic properties of CTSe-Au heteronanostructures, estimation of the Cu2SnSe3 band edges and photocatalytic measurements. See DOI: 10.1039/c5nr04468e

  9. Polymer optical interconnect technology (POINT): optoelectronic packaging and interconnect for board and backplane applications

    NASA Astrophysics Data System (ADS)

    Liu, Yung S.; Wojnarowski, R. J.; Hennessy, W. A.; Bristow, Julian P.; Liu, Yue; Peczalski, Andrzej; Rowlette, John R.; Plotts, Alan; Stack, Jared D.; Yardley, James T.; Eldada, L.; Osgood, Richard M.; Scarmozzino, Robert; Lee, Sing H.; Ozguz, Volkan H.

    1996-01-01

    The polymer optical interconnect technology (POINT) represents a major collaborative effort among GE, Honeywell, AMP, AlliedSignal, Columbia University and the University of California at San Diego (UCSD), sponsored by ARPA, in developing affordable optoelectronic module packaging and interconnect technologies for board- and backplane-level optical interconnect applications for a wide range of military and commercial applications. The POINT program takes a novel development approach by fully leveraging the existing electronic design, processing, fabrication, and module packaging technologies to optoelectronic module packaging. The POINT program further incorporates several state-of- the-art optoelectronic technologies that include high-speed VCSEL for multichannel array data transmission; flexible optical polymers such as PolyguideTM or coupling of device-to- fiber using a passive alignment process; a low-loss polymer for backplane interconnect to provide a high I/O density; low-cost diffractive optical elements (DOE) for board-to-backplane interconnect; and use of molded MT array ferrule to reduce overall system size, weight, and cost. In addition to further reducing design and fabrication cycle times, computer simulation tools for optical waveguide and mechanical modeling will be advanced under the POINT program.

  10. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  11. Single-mode array optoelectronic packaging based on actively aligned planar optical waveguides

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Silva, Edward R.; Knapp, Daniel F.

    1996-03-01

    Packaging of integrated optoelectronic devices (e.g., laser diode arrays and OEICs) is motivated by potential cost savings and the increased functionality of more highly integrated devices. To date, attempts to package integrated optoelectronic devices with arrays of single- mode fibers have tended to exhibit high optical losses. We have developed a single-mode array packaging process based on the use of an intermediate silica-on-silicon planar optical waveguides (POWs) assembly to which optical fibers are attached using V-grooves. By lensing the POWs, we have achieved coupling efficiencies of greater than 50%. The photolithographic registration of the POWs allows a large (greater than or equal to 8) array of POWs with attached fibers to be aligned to an array of optoelectronic devices in a single active alignment procedure. This single active alignment step is well-suited to automation, and our approach is thus well-suited to achieving low cost in a manufacturing environment. We also discuss our positioning and mounting techniques, which provide high-stability coupling in adverse temperature and vibration environments and are compatible with hermetic packaging.

  12. Micromanipulation of InP lasers with optoelectronic tweezers for integration on a photonic platform.

    PubMed

    Juvert, Joan; Zhang, Shuailong; Eddie, Iain; Mitchell, Colin J; Reed, Graham T; Wilkinson, James S; Kelly, Anthony; Neale, Steven L

    2016-08-01

    The integration of light sources on a photonic platform is a key aspect of the fabrication of self-contained photonic circuits with a small footprint that does not have a definitive solution yet. Several approaches are being actively researched for this purpose. In this work we propose optoelectronic tweezers for the manipulation and integration of light sources on a photonic platform and report the positional and angular accuracy of the micromanipulation of standard Fabry-Pérot InP semiconductor laser die. These lasers are over three orders of magnitude bigger in volume than any previously assembled with optofluidic techniques and the fact that they are industry standard lasers makes them significantly more useful than previously assembled microdisk lasers. We measure the accuracy to be 2.5 ± 1.4 µm and 1.4 ± 0.4° and conclude that optoelectronic tweezers are a promising technique for the micromanipulation and integration of optoelectronic components in general and semiconductor lasers in particular. PMID:27505781

  13. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices. PMID:26014889

  14. A doping-free approach to carbon nanotube electronics and optoelectronics

    NASA Astrophysics Data System (ADS)

    Peng, Lian-Mao; Zhang, Zhiyong; Wang, Sheng; Liang, Xuelei

    2012-12-01

    The electronic properties of conventional semiconductor are usually controlled by doping, which introduces carriers into the semiconductor but also distortion and scattering centers to the otherwise perfect lattice, leading to increased scattering and power consumption that becomes the limiting factors for the ultimate performance of the next generation electronic devices. Among new materials that have been considered as potential replacing channel materials for silicon, carbon nanotubes (CNTs) have been extensively studied and shown to have all the remarkable electronic properties that an ideal electronic material should have, but controlled doping in CNTs has been proved to be challenging. In this article we will review a doping-free approach for constructing nanoelectronic and optoelectronic devices and integrated circuits. This technique relies on a unique property of CNTs, i.e. high quality ohmic contacts can be made to both the conduction band and valence band of a semiconducting CNT. High performance nanoelectronic and optoelectronic devices have been fabricated using CNTs with this method and performance approach to that of quantum limit. In principle high performance electronic devices and optoelectronic devices can be integrated on the same carbon nanotube with the same footing, and this opens new possibilities for electronics beyond the Moore law in the future.

  15. Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction.

    PubMed

    Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X G; Yakobson, Boris I; Wei, Su-Huai

    2016-02-10

    Two-dimensional (2D) semiconductors can be very useful for novel electronic and optoelectronic applications because of their good material properties. However, all current 2D materials have shortcomings that limit their performance. As a result, new 2D materials are highly desirable. Using atomic transmutation and differential evolution global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has shown good electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer control and applied strain, and good air stability as well. Therefore, Pma2-SiS is expected to be a promising 2D material in the field of 2D electronics and optoelectronics. The designing principles demonstrated in identifying these two tantalizing examples have great potential to accelerate the finding of new functional 2D materials. PMID:26741149

  16. Cost-effective optoelectronic packaging for multichip modules and backplane level optical interconnects

    NASA Astrophysics Data System (ADS)

    Bristow, Julian P. G.; Liu, Yue; Marta, Terry; Bounnak, Sommy; Johnson, Klein; Liu, Yung-Sheng; Cole, Herbert S.

    1995-04-01

    Optical backplanes are of increasing interest for commercial and military avionic processors, and for commercial supercomputers. Projected interconnection density limits of electrical interconnects are rapidly becoming a bottleneck, preventing optimal exploitation of electronic processor capability. A potential obstacle to the commercial development of optoelectronic interconnect components for backplane-based systems is the small market for such specialized technology. In order to ensure that a cost effective solution is available for backplane based systems, commonality with a higher volume application is required. We describe optical packaging techniques for board level waveguides and multichip modules which exploit materials, processes and equipment already in widespread use in the electronics industry, and which can also be applied to a wide range of optoelectronic modules for local area network and telecommunications applications. Rugged polyetherimide waveguides with losses of 0.24 dB/cm have been integrated with conventional circuit board materials, and optoelectronic die have been packaged in a multichip module process using equipment normally used for purely electronic packaging. Practical optical interfaces and connectors have been demonstrated for board-to-backplane and board-to-multichip module applications, and offer increased pincount over their electrical counterparts while retaining compatibility with existing electrical connector alignment and fabrication tolerances.

  17. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hongda, Chen; Zan, Zhang; Beiju, Huang; Luhong, Mao; Zanyun, Zhang

    2015-12-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. Project supported by the National Basic Research Program of China (No. 2011CBA00608), the National Natural Science Foundation of China (Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China (Nos. 2013AA013602, 2013AA031903, 2013AA032204).

  18. Tracking technology for optoelectronic imaging platform of tethered balloon based on DGPS/INS

    NASA Astrophysics Data System (ADS)

    Wang, Y. W.; Wang, Z. Y.; Zhou, W. H.; Han, X. Q.

    2011-06-01

    In this paper, a tracking method for optoelectronic imaging platform of tethered balloon based on difference global positioning system/inertial navigation system is presented in detail. The location and attitude information of optoelectronic imaging platform, the azimuth and elevation angles of camera's line of sight are used by this method to locate the ground target at the centre point of the camera's field of view through corresponding coordinate transformation. And then, the method makes use of the update position and attitude information to solve the theoretical point of camera's line of sight inversely. Finally, an angle control commend will be sent to the inertially-stabilized turntable on the optoelectronic imaging platform, which will adjust its azimuth and elevation angle to make the camera's line of sight to the ground target. A lot of experiments are conducted, and the results show that the initial ground target is always in the centre of camera's field of view no matter how the balloon's position and attitude change, and the new location data of ground target has little difference with the initial location data, while the difference between them is close to 0.

  19. Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties.

    PubMed

    Huang, Yun; Xu, Kai; Wang, Zhenxing; Shifa, Tofik Ahmed; Wang, Qisheng; Wang, Feng; Jiang, Chao; He, Jun

    2015-11-01

    Layered chalcogenide materials (LCMs) are emerging materials in recent years for their great potential in applications of electronics and optoelectronics. As a member of LCMs, SnSe2, an n-type semiconductor with a band gap of ∼1.0 eV, is of great value to explore. In this paper, we develop a facile CVD method, for the first time, to synthesize diverse shaped SnSe2 and square SnSe nanosheets (NSs) on SiO2/Si substrates. To the best of our knowledge, the thickness of as-grown SnSe2 is among the thinnest ones synthesized by CVD methods on various substrates. What's more, photodetectors are fabricated to investigate the optoelectronic properties of SnSe2. The on/off ratio of photoswitches reaches 100 under the illumination of an 800 nm laser. This work will pave a new pathway to synthesize LCM nanostructures, shed light on the shape evolution during the growth process and expand the candidates for high performance optoelectronic devices. PMID:26426304

  20. Alkyl-π engineering in state control toward versatile optoelectronic soft materials

    NASA Astrophysics Data System (ADS)

    Lu, Fengniu; Nakanishi, Takashi

    2015-02-01

    Organic π-conjugated molecules with extremely rich and tailorable electronic and optical properties are frequently utilized for the fabrication of optoelectronic devices. To achieve high solubility for facile solution processing and desirable softness for flexible device fabrication, the rigid π units were in most cases attached by alkyl chains through chemical modification. Considerable numbers of alkylated-π molecular systems with versatile applications have been reported. However, a profound understanding of the molecular state control through proper alkyl chain substitution is still highly demanded because effective applications of these molecules are closely related to their physical states. To explore the underlying rule, we review a large number of alkylated-π molecules with emphasis on the interplay of van der Waals interactions (vdW) of the alkyl chains and π-π interactions of the π moieties. Based on our comprehensive investigations of the two interactions’ impacts on the physical states of the molecules, a clear guidance for state control by alkyl-π engineering is proposed. Specifically, either with proper alkyl chain substitution or favorable additives, the vdW and π-π interactions can be adjusted, resulting in modulation of the physical states and optoelectronic properties of the molecules. We believe the strategy summarized here will significantly benefit the alkyl-π chemistry toward wide-spread applications in optoelectronic devices.

  1. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

    PubMed

    Zhao, Yixin; Zhu, Kai

    2016-02-01

    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities. PMID:26645733

  2. Cell patterning via diffraction-induced optoelectronic dielectrophoresis force on an organic photoconductive chip.

    PubMed

    Yang, Shih-Mo; Tseng, Sheng-Yang; Chen, Hung-Po; Hsu, Long; Liu, Cheng-Hsien

    2013-10-01

    A laser diffraction-induced dielectrophoresis (DEP) phenomenon for the patterning and manipulation of individual HepG2 cells and polystyrene beads via positive/negative DEP forces is reported in this paper. The optoelectronic substrate was fabricated using an organic photoconductive material, TiOPc, via a spin-coating process on an indium tin oxide glass surface. A piece of square aperture array grid grating was utilized to transform the collimating He-Ne laser beam into the multi-spot diffraction pattern which forms the virtual electrodes as the TiOPc-coating surface was illuminated by the multi-spot diffraction light pattern. HepG2 cells were trapped at the spot centers and polystyrene beads were trapped within the dim region of the illuminated image. The simulation results of light-induced electric field and a Fresnel diffraction image illustrated the distribution of trapped microparticles. The HepG2 morphology change, adhesion, and growth during a 5-day culture period demonstrated the cell viability through our manipulation. The power density inducing DEP phenomena, the characteristics of the thin TiOPc coating layer, the operating ac voltage/frequency, the sandwiched medium, the temperature rise due to the ac electric fields and the illuminating patterns are discussed in this paper. This concept of utilizing laser diffraction images to generate virtual electrodes on our TiOPc-based optoelectronic DEP chip extends the applications of optoelectronic dielectrophoretic manipulation. PMID:23925640

  3. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

    PubMed Central

    Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2015-01-01

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

  4. Optoelectronic aid for patients with severely restricted visual fields in daylight conditions

    NASA Astrophysics Data System (ADS)

    Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando

    2011-11-01

    In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.

  5. Accuracy and Feasibility of Optoelectronic Sensors for Weed Mapping in Wide Row Crops

    PubMed Central

    Andújar, Dionisio; Ribeiro, Ángela; Fernández-Quintanilla, César; Dorado, José

    2011-01-01

    The main objectives of this study were to assess the accuracy of a ground-based weed mapping system that included optoelectronic sensors for weed detection, and to determine the sampling resolution required for accurate weed maps in maize crops. The optoelectronic sensors were located in the inter-row area of maize to distinguish weeds against soil background. The system was evaluated in three maize fields in the early spring. System verification was performed with highly reliable data from digital images obtained in a regular 12 m × 12 m grid throughout the three fields. The comparison in all these sample points showed a good relationship (83% agreement on average) between the data of weed presence/absence obtained from the optoelectronic mapping system and the values derived from image processing software (“ground truth”). Regarding the optimization of sampling resolution, the comparison between the detailed maps (all crop rows with sensors separated 0.75 m) with maps obtained with various simulated distances between sensors (from 1.5 m to 6.0 m) indicated that a 4.5 m distance (equivalent to one in six crop rows) would be acceptable to construct accurate weed maps. This spatial resolution makes the system cheap and robust enough to generate maps of inter-row weeds. PMID:22163740

  6. Fast terahertz optoelectronic amplitude modulator based on plasmonic metamaterial antenna arrays and graphene

    NASA Astrophysics Data System (ADS)

    Jessop, David S.; Sol, Christian W. O.; Xiao, Long; Kindness, Stephen J.; Braeuninger-Weimer, Philipp; Lin, Hungyen; Griffiths, Jonathan P.; Ren, Yuan; Kamboj, Varun S.; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A.; Degl'Innocenti, Riccardo

    2016-02-01

    The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.

  7. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    PubMed

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications. PMID:26910395

  8. Highly Conductive Transparent Organic Electrodes with Multilayer Structures for Rigid and Flexible Optoelectronics

    PubMed Central

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-01-01

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric–metal–dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq−1 at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices. PMID:26014889

  9. Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

    NASA Astrophysics Data System (ADS)

    Seidlitz, Daniel; Senevirathna, M. K. I.; Abate, Y.; Hoffmann, A.; Dietz, N.

    2015-09-01

    This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.

  10. Toward polymeric materials with optoelectronic properties tunable by mechanical and optical stimuli

    NASA Astrophysics Data System (ADS)

    Harvey, Christopher P.

    Stimuli responsive materials have properties that can be reversibly altered through treatment with a controllable external factor such as heat, light, or mechanical force. The work presented herein was focused on creating materials with optoelectronic properties tunable through mechanical stress or light irradiation. The optical properties of mechanochromic systems change under mechanical stress. There are several ways of achieving this response. Physical deformation may disrupt electronic interactions that have been established within the material or it may change the spatial arrangement of internal components in such a way as to alter their interaction with light. Breaking and reestablishing pi-pi interactions between conjugated units within elastic polymers may also lead to a mechanochromic response. Systems which respond to deformation with reversible, visible color changes may be useful for stress detection within materials. Segmented polyurethanes are elastomers composed of amorphous, saturated chain soft segments and rigid, more crystalline hard domains. Within aggregates of hard domains pi-pi interactions may form and result in alteration of the optoelectronic properties of the system. These electronic interactions may be disrupted by mechanical deformation leading to an observable mechanochromic response. A series of oligothiophene diols and diamines, as well as a naphthalene diimide diol, have been synthesized for incorporation into the hard domains of segmented polyurethanes and polyureas using long poly(tetramethylene oxide) chains as soft segments in order to evaluate such systems for possible mechanochromic response. Photochromic molecules undergo reversible changes in properties in response to irradiation with light. These compounds are found in a variety of natural pigment systems and organic electronic applications. The observed changes in properties are the results of rearrangements within the molecules which alter their optoelectronic

  11. Preparation, characterization and optoelectronic properties of nanodiamonds doped zinc oxide nanomaterials by a ball milling technique

    NASA Astrophysics Data System (ADS)

    Ullah, Hameed; Sohail, Muhammad; Malik, Uzma; Ali, Naveed; Bangash, Masroor Ahmad; Nawaz, Mohsan

    2016-07-01

    Zinc oxide (ZnO) is one of the very important metal oxides (MOs) for applications in optoelectronic devices which work in the blue and UV regions. However, to meet the challenges of obtaining ZnO nanomaterials suitable for practical applications, various modifications in physico-chemical properties are highly desirable. One of the ways adopted for altering the properties is to synthesize composite(s) of ZnO with various reinforcements. Here we report on the tuning of optoelectronic properties of ZnO upon doping by nanodiamonds (NDs) using the ball milling technique. A varying weight percent (wt.%) of NDs were ball milled for 2 h with ZnO nanoparticles prepared by a simple precipitation method. The effects of different parameters, the calcination temperature of ZnO, wt.% of NDs and mechanical milling upon the optoelectronic properties of the resulting ZnO–NDs nanocomposites have been investigated. The ZnO–NDs nanocomposites were characterized by IR spectroscopy, powder x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The UV-vis spectroscopy revealed the alteration in the bandgap energy (Eg ) of ZnO as a function of the calcination temperature of ZnO, changing the concentration of NDs, and mechanical milling of the resulting nanocomposites. The photoluminescence (PL) spectroscopy showed a decrease in the deep level emission (DLE) peaks and an increase in near-band-edge transition peaks as a result of the increasing concentration of NDs. The decrease in DLE and increase in band to band transition peaks were due to the strong interaction between the NDs and the Zn+; consequently, the Zn+ concentration decreased on the interstitial sites.

  12. Modulating Optoelectronic Properties of Two-Dimensional Transition Metal Dichalcogenide Semiconductors by Photoinduced Charge Transfer.

    PubMed

    Choi, Jungwook; Zhang, Hanyu; Choi, Jong Hyun

    2016-01-26

    Atomically thin transition metal dichalcogenides (TMDCs) have attracted great interest as a new class of two-dimensional (2D) direct band gap semiconducting materials. The controllable modulation of optical and electrical properties of TMDCs is of fundamental importance to enable a wide range of future optoelectronic devices. Here we demonstrate a modulation of the optoelectronic properties of 2D TMDCs, including MoS2, MoSe2, and WSe2, by interfacing them with two metal-centered phthalocyanine (MPc) molecules: nickel Pc (NiPc) and magnesium Pc (MgPc). We show that the photoluminescence (PL) emission can be selectively and reversibly engineered through energetically favorable electron transfer from photoexcited TMDCs to MPcs. NiPc molecules, whose reduction potential is positioned below the conduction band minima (CBM) of monolayer MoSe2 and WSe2, but is higher than that of MoS2, quench the PL signatures of MoSe2 and WSe2, but not MoS2. Similarly, MgPc quenches only WSe2, as its reduction potential is situated below the CBM of WSe2, but above those of MoS2 and MoSe2. The quenched PL emission can be fully recovered when MPc molecules are removed from the TMDC surfaces, which may be refunctionalized and recycled multiple times. We also find that photocurrents from TMDCs, probed by photoconductive atomic force microscopy, increase over 2-fold only when the PL is quenched by MPcs, further supporting the photoinduced charge transfer mechanism. Our results should benefit design strategies for 2D inorganic-organic optoelectronic devices and systems with tunable properties and improved performances. PMID:26720839

  13. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  14. Flexible radio-frequency photonics: Optoelectronic frequency combs and integrated pulse shaping

    NASA Astrophysics Data System (ADS)

    Metcalf, Andrew J.

    Microwave photonics is a discipline which leverages optoelectronics to enhance the generation, transport, and processing of high-frequency electrical signals. At the heart of many emerging techniques is the optical frequency comb. A comb is a lightwave source whose spectrum is made up of discrete equally spaced spectral components that share a fixed phase relationship. These discrete coherent oscillators --known as comb lines-- collectively form a Fourier basis that describe a periodic optical waveform. Within the last two decades frequency-stabilized broadband combs produced from mode-locked lasers have led to revolutionary advancements in precision optical frequency synthesis and metrology. Meanwhile, Fourier-transform optical pulse shaping, which provides a means to control a comb's Fourier basis in both amplitude and phase, has emerged as an integral tool in optical communications, broadband waveform generation, and microwave photonic filtering. However, traditional comb and pulse shaping architectures are often plagued by complex and bulky setups, rendering robust and cost effective implementation outside of the laboratory a challenge. In addition, traditional comb sources based on short-pulse lasers do not possess qualities which are ideally suited for this new application regime. Motivated by the shortcomings in current architectures, and empowered by recent advancements in optoelectronic technology, this dissertation focuses on developing novel and robust schemes in optical frequency comb generation and line-by-line pulse shaping. Our results include: the invention and low-noise characterization of a broadband flat-top comb source; the realization of an optoelectronic-based time cloak; and finally, the development of an integrated pulse shaper, which we use in conjunction with our flat-top comb source to demonstrate a rapidly reconfigurable microwave photonic filter.

  15. Study of application and key technology of the high-energy laser weapon in optoelectronic countermeasure

    NASA Astrophysics Data System (ADS)

    Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui

    2015-10-01

    High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking

  16. Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics

    NASA Astrophysics Data System (ADS)

    Grote, Richard R.

    The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area. This dissertation details the application of nanophotonics to two optoelectronic systems: extrinsic photodetectors for silicon photonics and light-trapping in organic photovoltaics. Error-free reception of 10 Gb/s data at lambda = 1.55 mum is demonstrated with a Si+ ion-implanted silicon waveguide photodiode. To mitigate the relatively small absorption coefficient of ion-implanted silicon, resonant cavity enhancement using in-line Fabry-Perot and 1D photonic crystal cavities, as well as slow light enhancement using a coupled resonator optical waveguide are discussed. The extension of these photodiodes to the mid-infrared is demonstrated using Zn+ implantation to detect over a range of lambda = 2.2-2.4 mum, and a new method for modulation and switching in integrated optics by using interference in a resonant cavity, termed coherent perfect loss (CPL), is presented. Finally, the upper limit of nanophotonic light trapping is derived for organic photovoltaics with material anisotropy included.

  17. Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication

    NASA Astrophysics Data System (ADS)

    Jin, Michael Sungchun

    Various forms of optical computing architectures have promised enhanced processing capabilities well beyond the limits of traditional VLSI technology during the past decade. However, the progress toward realizing this vision has been severely limited by the lack of mature technology to fabricate heterogeneously integrated optoelectronic transceiver arrays (consisting of VLSI electronics with optoelectronic devices) that are necessary to link the functionality of photonic input/output devices with electronic processors. This dissertation describes a research effort that addressed this need by exploring innovative, yet highly manufacturable integration approaches that can be utilized to fabricate hybrid optoelectronic transceivers by integrating thin silicon device layers on bulk electro-optic (e.g. lead lanthanum zirconate titanate- PLZT) and other host substrates. The two integration techniques developed are: (1) B& P (Bond and Processing) technology involving bonding of bulk-quality thin silicon layer to PLZT followed by low temperature NMOS processing and (2) DDB (Direct-Device Bonding) technology, where circuit layer fabricated in SOI-silicon is thinned and bonded directly to a PLZT substrate. Characteristics of electronic circuits and modulators in integrated Si/PLZT SLMs are measured to be comparable to that of reference devices fabricated in bulk silicon and PLZT substrates. The application of the developed integration technology specifically toward fabricating Si/PLZT spatial light modulator is examined in detail. The developed device layer grafting technology based on chemo-mechanical lapping and reactive ion etching processes can be applied to assemble miniature ``mixed technology'' systems consisting of devices fabricated by different manufacturing processes (e.g. CMOS, MEMS, VCSEL and GaAs processes) in a monolithic fashion. The latter half of the thesis details experimental

  18. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    PubMed

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas. PMID:24402437

  19. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  20. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. P.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs MMIC-based phased array antennas. This paper describes the performance of a hybrid GaAs optoelectronic integrated circuit (OEIC), along with a description of its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 305 Mbps. The performance characteristics as well as potential applications of the device are presented.

  1. Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

    SciTech Connect

    Keller, P.E.; Gmitro, A.F.

    1993-07-01

    A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs and that the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieve.

  2. Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

    SciTech Connect

    Kumar, Vijay E-mail: sanjeev04101977@gmail.com; Singh, Harpreetpal

    2015-05-15

    ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

  3. Ultralow-noise mode-locked laser with coupled optoelectronic oscillator configuration.

    PubMed

    Yu, Nan; Salik, Ertan; Maleki, Lute

    2005-05-15

    We describe simultaneous generation of ultralow-noise optical pulses and microwave signal with a mode-locked fiber laser in a coupled optoelectronic oscillator configuration. We demonstrate 9.2-GHz optical and microwave signals with the measured phase noise of -140 dBc/Hz at 10-kHz offset frequency. We show that the mode-locked laser in the photonic oscillator serves as a high-Q filter and is responsible for the observed low phase noise. PMID:15943318

  4. Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations

    NASA Astrophysics Data System (ADS)

    Illera, S.; Prades, J. D.; Cirera, A.; Cornet, A.

    2015-05-01

    We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads.

  5. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

    SciTech Connect

    Mansfield, Lorelle M.; Kuciauskas, Darius; Dippo, Patricia; Li, Jian V.; Bowers, Karen; To, Bobby; DeHart, Clay; Ramanathan, Kannan

    2015-06-14

    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

  6. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  7. Optoelectronic characterization of carrier extraction in a hot carrier photovoltaic cell structure

    NASA Astrophysics Data System (ADS)

    Dimmock, James A. R.; Kauer, Matthias; Smith, Katherine; Liu, Huiyun; Stavrinou, Paul N.; Ekins-Daukes, Nicholas J.

    2016-07-01

    A hot carrier photovoltaic cell requires extraction of electrons on a timescale faster than they can lose energy to the lattice. We optically and optoelectronically characterize two resonant tunneling structures, showing their compatability with hot carrier photovoltaic operation, demonstrating structural and carrier extraction properties necessary for such a device. In particular we use time resolved and temperature dependent photoluminescence to determine extraction timescales and energy levels in the structures and demonstrate fast carrier extraction by tunneling. We also show that such devices are capable of extracting photo-generated electrons at high carrier densities, with an open circuit voltage in excess of 1 V.

  8. Broadly tunable, low timing jitter, high repetition rate optoelectronic comb generator

    PubMed Central

    Metcalf, A. J.; Quinlan, F.; Fortier, T. M.; Diddams, S. A.; Weiner, A. M.

    2016-01-01

    We investigate the low timing jitter properties of a tunable single-pass optoelectronic frequency comb generator. The scheme is flexible in that both the repetition rate and center frequency can be continuously tuned. When operated with 10 GHz comb spacing, the integrated residual pulse-to-pulse timing jitter is 11.35 fs (1 Hz to 10 MHz) with no feedback stabilization. The corresponding phase noise at 1 Hz offset from the photodetected 10 GHz carrier is −100 dBc/Hz. PMID:26865734

  9. Optoelectronic Tweezers as a Tool for Parallel Single-Cell Manipulation and Stimulation

    PubMed Central

    Valley, Justin K.; Ohta, Aaron T.; Hsu, Hsan-Yin; Neale, Steven L.; Jamshidi, Arash; Wu, Ming C.

    2010-01-01

    Optoelectronic tweezers (OET) is a promising approach for the parallel manipulation of single cells for a variety of biological applications. By combining the manipulation capabilities of OET with other relevant biological techniques (such as cell lysis and electroporation), one can realize a true parallel, single-cell diagnostic and stimulation tool. Here, we demonstrate the utility of the OET device by integrating it onto single-chip systems capable of performing in-situ, electrode-based electroporation/lysis, individual cell, light-induced lysis, and light-induced electroporation. PMID:20543904

  10. Programmable manipulation of motile cells in optoelectronic tweezers using a grayscale image

    NASA Astrophysics Data System (ADS)

    Choi, Wonjae; Nam, Seong-Won; Hwang, Hyundoo; Park, Sungsu; Park, Je-Kyun

    2008-10-01

    This paper describes a grayscale optoelectronic tweezers (OET) which allows adjustment of the electric field strength at each position of OET. A grayscale light image was used to pattern vertical electric field strength on an OET. As an electric field depends on the brightness at each point, the brighter light patterns generate the stronger electric field in the OET. Its feasibility for application to cell manipulation was demonstrated by aligning highly motile protozoan cells in vertical direction. Depending on the brightness of each pixel, the behaviors of aligned cells varied due to the different electric field strength to each cell.

  11. Photonic information processing beyond Turing: an optoelectronic implementation of reservoir computing.

    PubMed

    Larger, L; Soriano, M C; Brunner, D; Appeltant, L; Gutierrez, J M; Pesquera, L; Mirasso, C R; Fischer, I

    2012-01-30

    Many information processing challenges are difficult to solve with traditional Turing or von Neumann approaches. Implementing unconventional computational methods is therefore essential and optics provides promising opportunities. Here we experimentally demonstrate optical information processing using a nonlinear optoelectronic oscillator subject to delayed feedback. We implement a neuro-inspired concept, called Reservoir Computing, proven to possess universal computational capabilities. We particularly exploit the transient response of a complex dynamical system to an input data stream. We employ spoken digit recognition and time series prediction tasks as benchmarks, achieving competitive processing figures of merit. PMID:22330562

  12. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    SciTech Connect

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  13. Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

    PubMed Central

    Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

    2009-01-01

    A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements. PMID:22291552

  14. Characterization technique of optical whispering gallery mode resonators in the microwave frequency domain for optoelectronic oscillators.

    PubMed

    Merrer, Pierre-Henri; Saleh, Khaldoun; Llopis, Olivier; Berneschi, Simone; Cosi, Franco; Conti, Gualtiero Nunzi

    2012-07-10

    Optical Q factor measurements are performed on a whispering gallery mode (WGM) disk resonator using a microwave frequency domain approach instead of using an optical domain approach. An absence of hysteretic behavior and a better linearity are obtained when performing linewidth measurements by using a microwave modulation for scanning the resonances instead of the piezoelectric-based frequency tuning capability of the laser. The WGM resonator is then used to stabilize a microwave optoelectronic oscillator. The microwave output of this system generates a 12.48 GHz signal with -94 dBc/Hz phase noise at 10 kHz offset. PMID:22781250

  15. Tunable optoelectronic oscillator based on a chirped Mach-Zehnder modulator

    NASA Astrophysics Data System (ADS)

    Wei, Zhihu; Pan, Shilong; Wang, Rong; Pu, Tao; Fang, Tao; Sun, Guodan; Zheng, Jilin

    2013-05-01

    Realization of a wideband tunable optoelectronic oscillator based on a chirped Mach-Zehnder modulator (MZM) and a chirped fiber Bragg grating is proposed and demonstrated. By simply adjusting the direct-current bias of the chirped MZM, the frequency of the oscillating signal is tuned. A theoretical model is established, then verified by an experiment. A high-purity microwave signal with a tunable frequency from 5.8 to 11.8 GHz is generated. The single-sideband phase noise of the generated signal is -112.6 dBc/Hz at a frequency offset of 10 kHz.

  16. Wideband tunable optoelectronic oscillator based on a phase modulator and a tunable optical filter.

    PubMed

    Xie, Xiaopeng; Zhang, Cheng; Sun, Tao; Guo, Peng; Zhu, Xiaoqi; Zhu, Lixin; Hu, Weiwei; Chen, Zhangyuan

    2013-03-01

    A widely tunable optoelectronic oscillator (OEO) based on a broadband phase modulator and a tunable optical bandpass filter is proposed and experimentally demonstrated. A tunable range from 4.74 to 38.38 GHz is realized by directly tuning the bandwidth of the optical bandpass filter. To the best of our knowledge, this is the widest fundamental frequency tunable range ever achieved by an OEO. The phase noise performance of the generated signal is also investigated. The single-sideband phase noise is below -120 dBc/Hz at an offset of 10 KHz within the whole tunable range. PMID:23455255

  17. Wideband signal upconversion and phase shifting based on a frequency tunable optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Liu, Shifeng; Zhu, Dan; Pan, Shilong

    2014-03-01

    A wideband signal upconversion and phase shifting scheme based on a frequency tunable optoelectronic oscillator (OEO) are proposed and demonstrated. The OEO performs simultaneously tunable high-quality local oscillator (LO) signal generation, wideband frequency upconversion, and phase shifting within the whole 2π range. With the generated LO tuning from 9.549 to 11.655 GHz, wideband square signals are successfully upconverted to the X band. The phase of the upconverted signal is tuned from 0 to 360 deg. The phase noise of the oscillation signal is about -104 dBc/Hz at 10 kHz offset with or without the injected baseband signal.

  18. Reservoir computing with a slowly modulated mask signal for preprocessing using a mutually coupled optoelectronic system

    NASA Astrophysics Data System (ADS)

    Tezuka, Miwa; Kanno, Kazutaka; Bunsen, Masatoshi

    2016-08-01

    Reservoir computing is a machine-learning paradigm based on information processing in the human brain. We numerically demonstrate reservoir computing with a slowly modulated mask signal for preprocessing by using a mutually coupled optoelectronic system. The performance of our system is quantitatively evaluated by a chaotic time series prediction task. Our system can produce comparable performance with reservoir computing with a single feedback system and a fast modulated mask signal. We showed that it is possible to slow down the modulation speed of the mask signal by using the mutually coupled system in reservoir computing.

  19. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    DOEpatents

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  20. In-P based optoelectronic components for measurements, communications, and computers

    SciTech Connect

    Ishak, W.S.

    1996-12-31

    Optoelectronic and electronic devices will play a key role in the emerging information age. In particular, devices based on InP materials and operating in the 1--2 {micro}m wavelength regime are becoming a necessity for applications in long-haul fiber-optic communications, local area networks and lightwave test and measurement instrumentation. Some of these applications require very high-performance devices and, hence, are not very sensitive to cost. On the other hand, many other applications (for example, computer interconnects), cost is the most important parameter and large-scale manufacturing techniques must be implemented. Examples for both applications will be addressed.

  1. Mixed-mode oscillations in slow-fast delayed optoelectronic systems

    NASA Astrophysics Data System (ADS)

    Talla Mbé, Jimmi H.; Talla, Alain F.; Chengui, Geraud R. Goune; Coillet, Aurélien; Larger, Laurent; Woafo, Paul; Chembo, Yanne K.

    2015-01-01

    In this article, we investigate the dynamical behavior of breathers in optoelectronic oscillators from the standpoint of mixed-mode oscillations. In the phase space, these breathers are composite oscillations that are damped to the attractive branches of an invariant manifold. Our study shows that the emergence of breather dynamics is linked to the apparition of inflection points in the phase space, and we develop an analytical framework based on the Liénard reduction form in order to provide an analytical insight into this phenomenology. Our theoretical results are in excellent agreement with experimental measurements.

  2. Mixed-mode oscillations via canard explosions in light-emitting diodes with optoelectronic feedback.

    PubMed

    Marino, F; Ciszak, M; Abdalah, S F; Al-Naimee, K; Meucci, R; Arecchi, F T

    2011-10-01

    Chaotically spiking attractors in semiconductor lasers with optoelectronic feedback have been recently observed to be the result of canard phenomena in three-dimensional phase space (incomplete homoclinic scenarios). Since light-emitting diodes display the same dynamics and are much more easily controllable, we use one of these systems to complete the attractor analysis demonstrating experimentally and theoretically the occurrence of complex sequences of periodic mixed-mode oscillations. In particular, we investigate the transition between periodic and chaotic mixed-mode states and analyze the effects of the unavoidable experimental noise on these transitions. PMID:22181318

  3. Mixed-mode oscillations via canard explosions in light-emitting diodes with optoelectronic feedback

    NASA Astrophysics Data System (ADS)

    Marino, F.; Ciszak, M.; Abdalah, S. F.; Al-Naimee, K.; Meucci, R.; Arecchi, F. T.

    2011-10-01

    Chaotically spiking attractors in semiconductor lasers with optoelectronic feedback have been recently observed to be the result of canard phenomena in three-dimensional phase space (incomplete homoclinic scenarios). Since light-emitting diodes display the same dynamics and are much more easily controllable, we use one of these systems to complete the attractor analysis demonstrating experimentally and theoretically the occurrence of complex sequences of periodic mixed-mode oscillations. In particular, we investigate the transition between periodic and chaotic mixed-mode states and analyze the effects of the unavoidable experimental noise on these transitions.

  4. Alloying InAs and InP nanowires for optoelectronic applications: A first principles study

    NASA Astrophysics Data System (ADS)

    Toniolo, Giuliano R.; Anversa, Jonas; dos Santos, Cláudia L.; Piquini, Paulo

    2014-08-01

    The capability of nanowires to relieve the stress introduced by lattice mismatching through radial relaxation opens the possibility to search for devices for optoelectronic applications. However, there are difficulties to fabricate, and therefore to explore the properties of nanowires with narrow diameters. Here we apply first principles calculations to study the electronic and optical properties of narrow InAs1 - xPx nanowires. Our results show that the absorption threshold can be pushed to near-ultraviolet region, and suggests that arrays of these nanowires with different diameters and compositions could be used as devices acting from the mid-infrared to the near-ultraviolet region.

  5. Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wang, Li; Chen, Ran; Ren, Zhi-Fei; Ge, Cai-Wang; Liu, Zhen-Xing; He, Shu-Juan; Yu, Yong-Qiang; Wu, Chun-Yan; Luo, Lin-Bao

    2016-05-01

    In this study, we report a localized surface plasmon resonance (LSPR) enhanced optoelectronic device based on a ZnSe:Sb nanoribbon (NR)/Si nano-heterojunction. We experimentally demonstrated that the LSPR peaks of plasmonic Ag nanoparticles (Ag NPs) can be readily tuned by changing their size distribution. Optical analysis reveals that the absorption of ZnSe:Sb NRs was increased after the decoration of the Ag NPs with strong LSPR. Further analysis of the optoelectronic device confirmed the device performance can be promoted: for example, the short-circuit photocurrent density of the ZnSe/Si heterojunction solar cell was improved by 57.6% from 11.75 to 18.52 mA cm‑2 compared to that without Ag NPs. Meanwhile, the responsivity and detectivity of the ZnSe:Sb NRs/Si heterojunction device increased from 117.2 to 184.8 mA W‑1, and from 5.86 × 1011 to 9.20 × 1011 cm Hz1/2 W‑1, respectively.

  6. Plasmonic silver nanosphere enhanced ZnSe nanoribbon/Si heterojunction optoelectronic devices.

    PubMed

    Wang, Li; Chen, Ran; Ren, Zhi-Fei; Ge, Cai-Wang; Liu, Zhen-Xing; He, Shu-Juan; Yu, Yong-Qiang; Wu, Chun-Yan; Luo, Lin-Bao

    2016-05-27

    In this study, we report a localized surface plasmon resonance (LSPR) enhanced optoelectronic device based on a ZnSe:Sb nanoribbon (NR)/Si nano-heterojunction. We experimentally demonstrated that the LSPR peaks of plasmonic Ag nanoparticles (Ag NPs) can be readily tuned by changing their size distribution. Optical analysis reveals that the absorption of ZnSe:Sb NRs was increased after the decoration of the Ag NPs with strong LSPR. Further analysis of the optoelectronic device confirmed the device performance can be promoted: for example, the short-circuit photocurrent density of the ZnSe/Si heterojunction solar cell was improved by 57.6% from 11.75 to 18.52 mA cm(-2) compared to that without Ag NPs. Meanwhile, the responsivity and detectivity of the ZnSe:Sb NRs/Si heterojunction device increased from 117.2 to 184.8 mA W(-1), and from 5.86 × 10(11) to 9.20 × 10(11) cm Hz(1/2) W(-1), respectively. PMID:27082740

  7. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    SciTech Connect

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan; Lantz, Kevin R.

    2012-07-30

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this work will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.

  8. New melt-processable thermoplastic polyimides for opto-electronic applications

    NASA Astrophysics Data System (ADS)

    Narayanan, Aditya; Haralur, Gurulingamurthy

    2012-10-01

    The rapid development and adoption of digital technology is leading to an increase in demand for smaller, faster digital data devices and faster digital telecommunication networks. This trend requires increased network bandwidth to handle large amounts of data and seamless integration of network devices with compatible end-user devices. This need is being met by using fiber-optic and photonics technology, infra-red (IR) signals to transmit information, and is fundamental changing the communication industry, thereby creating a need for new polymeric materials. New ULTEM* polyetherimide (PEI) and EXTEM* thermoplastic polyimide (TPI) resins meet the material requirements for the optoelectronics industry. These resins have building blocks enabling IR light transmission without degrading signal quality. They can be injection-molded into thin, precision optical lenses and connectors. ULTEM* resins are been widely used in this industry as fiber-optic components in trans-receivers. EXTEM* resins are amenable to lead-free soldering (LFS), a greener industrial assembly process. While still being IR-transparent, EXTEM* resin is an ideal material for LFS capable substrates, connectors and lenses. An optical product portfolio has been developed and is being presented as a solution to the opto-electronics component industry and some of the successful applications therein.

  9. Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

    NASA Astrophysics Data System (ADS)

    Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

    2016-06-01

    The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

  10. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-02-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A-1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

  11. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures

    PubMed Central

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-01-01

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A−1 without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs. PMID:24509524

  12. Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices

    SciTech Connect

    Wang Qi; Williams, Graeme; Aziz, Hany; Tsui Ting

    2012-09-15

    We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

  13. Simulation and Numerical Modeling of the Self-assembly of an Optoelectronic Peptide

    NASA Astrophysics Data System (ADS)

    Mansbach, Rachael; Ferguson, Andrew

    We report molecular dynamics simulations of the self-assembly of synthetic π-conjugated oligopeptides into optoelectronic nanostructures. The electronic properties provide the basis for an array of organic electronic devices, such as light-emitting diodes, field-effect transistors, and solar cells. Control of the structure, stability, and kinetics of self-assembled organic electronics by tuning monomer chemistry and environmental conditions presents a powerful route to the fabrication of biocompatible ``designer materials.'' We have performed coarse-grained simulations of the self-assembly of several hundred peptides over microsecond time scales to probe the morphology and kinetics of aggregation with molecular-level detail. We have subsequently used this simulation data to parameterize a kinetic aggregation model based on Smoluchowski coagulation theory to enable prediction of aggregation dynamics on millisecond time scales. These numerical models are now being integrated into a multi-physics model of peptide aggregation in a microfluidic flow cell developed by our experimental collaborators to model the self-assembly of diverse peptide architectures under tailored flow-fields for the fabrication of biocompatible assemblies with defined morphology and optoelectronic function.

  14. Synthesis, structure, and opto-electronic properties of organic-based nanoscale heterojunctions

    PubMed Central

    2011-01-01

    Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV) and short diffusion length (10 nm) of excitons in organic materials. Inherently, interplay of microscopic structural, chemical, and opto-electronic properties plays crucial role. We show that employing and combining advanced scanning probe techniques can provide us significant insight into the correlation of these properties. By adjusting parameters of contact- and tapping-mode atomic force microscopy (AFM), we perform morphologic and mechanical characterizations (nanoshaving) of organic layers, measure their electrical conductivity by current-sensing AFM, and deduce work functions and surface photovoltage (SPV) effects by Kelvin force microscopy using high spatial resolution. These data are further correlated with local material composition detected using micro-Raman spectroscopy and with other electronic transport data. We demonstrate benefits of this multi-dimensional characterizations on (i) bulk heterojunction of fully organic composite films, indicating differences in blend quality and component segregation leading to local shunts of photovoltaic cell, and (ii) thin-film heterojunction of polypyrrole (PPy) electropolymerized on hydrogen-terminated diamond, indicating covalent bonding and transfer of charge carriers from PPy to diamond. PMID:21711759

  15. Resolving local voltage variations in opto-electronic devices with Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Tennyson, Elizabeth; Garrett, Joseph; Munday, Jeremy; Leite, Marina

    We employ illuminated Kelvin probe force microscopy (KPFM) to spatially resolve the open-circuit voltage (Voc) of optoelectronic devices with nanoscale spatial resolution, >5 orders of magnitude better than previous methods. In illuminated-KPFM, we measure the difference in work function between the sample surface and the probe, termed the contact potential difference (CPD). By grounding the bottom contact of the solar cell to the AFM probe, the difference between the illuminated and the dark signals is proportional to quasi-Fermi level splitting and, therefore, the Voc. We apply our scanning probe technique to a variety of solar cell materials, including polycrystalline CIGS, where we resolve local variations in Voc >150 mV. We use heterodyne-KPFM (where we map 1 μm2 in 16 seconds) to probe hybrid perovskites solar cells, and quantify in real-time the voltage changes upon material relaxation after illumination. This metrology yields new insights into the local electrical properties of solar cells, and can be expanded to any optoelectronic device.

  16. Selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children

    NASA Astrophysics Data System (ADS)

    Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.

    2014-11-01

    In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.

  17. Design and fabrication of a 3x3 optoelectronic integrated switch

    NASA Astrophysics Data System (ADS)

    Gouin, Francois L.; Beaulieu, Christian; Noad, Julian P.

    1996-01-01

    With the increasing number of optical networks comes a growing demand for hardware to allow management of interconnections. One of the important elements in a network is the cross-point switch. In this presentation, we describe a GaAs 3 multiplied by 3 optoelectronic switch based on a monolithic optoelectronic integrated circuit which combines a receiver array of MSM photodetectors and three transimpedance amplifiers providing gain for the three output channels. The 3 multiplied by 3 matrix of photodetectors acts at the switching element. The three electrical output channels from this receiver are amplified further by MIC circuits using chip amplifiers. This restores the signal to a level sufficient to drive semiconductor lasers thereby converting the electrical signal back to an optical signal for use as an optical- optical router. A critical step in the switch construction is the delivery of the optical signals to the photodetectors. A special mount was designed and fabricated to support and align the 9 fibers in front of their respective detectors. The switch was evaluated in terms of the responsivity, the isolation and the cross-talk. The overall responsivity exceeds 20 A/W with a bandwidth of 400 MHz, limited by the speed of the detectors. The isolation varies between 33 and 55 dB and depends on the device selected and on the bias condition of the detector in the off-state. The operation of the switch was demonstrated using three television signals.

  18. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening

    NASA Astrophysics Data System (ADS)

    Wang, Weiya; Jia, Mengyu; Gao, Feng; Yang, Lihong; Qu, Pengpeng; Zou, Changping; Liu, Pengxi; Zhao, Huijuan

    2015-02-01

    The cervical cancer screening at a pre-cancer stage is beneficial to reduce the mortality of women. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening is introduced in this paper. In this system, three electrodes alternately discharge to the cervical tissue and three light emitting diodes in different wavelengths alternately irradiate the cervical tissue. Then the relative optical reflectance and electrical voltage attenuation curve are obtained by optical and electrical detection, respectively. The system is based on DSP to attain the portable and cheap instrument. By adopting the relative reflectance and the voltage attenuation constant, the classification algorithm based on Support Vector Machine (SVM) discriminates abnormal cervical tissue from normal. We use particle swarm optimization to optimize the two key parameters of SVM, i.e. nuclear factor and cost factor. The clinical data were collected on 313 patients to build a clinical database of tissue responses under optical and electrical stimulations with the histopathologic examination as the gold standard. The classification result shows that the opto-electronic joint detection has higher total coincidence rate than separate optical detection or separate electrical detection. The sensitivity, specificity, and total coincidence rate increase with the increasing of sample numbers in the training set. The average total coincidence rate of the system can reach 85.1% compared with the histopathologic examination.

  19. Carbon Nanotube Composites as Efficient Charge Transport Media in Organic Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Fournet, Patrick; Coleman, Jonathan N.; O'Brien, Diarmuid F.; Lahr, Bernd; Drury, Anna; McNeill, Christopher R.; Dastoor, Paul C.; Wallace, Gordon G.; Hoerhold, Hans-Heinrich; Blau, Werner J.

    2003-03-01

    Thanks to their cheap processability, organic optoelectronic devices are believed to gradually gain a non-negligible place on the market. However, their performances remain low, mainly because of the poor electron transport in conventional polymers used in such devices. Carbon nanotubes, with a bulk conductivity as high as 10E5 S/m, could therefore be seen as potential candidates to address this important issue. In this work, we have studied the use of a carbon nanotube and polymer composite as an active layer in organic light-emitting diodes and organic photovoltaic devices. Enhanced brightness was achieved using the composite as an electron-transport layer in organic light-emitting diodes, the best efficiency being obtained for those devices with a nanotube content of 1.2 %. Secondly, we have studied the use of the polymer and carbon nanotube composite as the active layer in organic photovoltaic cells. Photocurrents in such devices were greater than that of the cells without carbon nanotubes. It is believed that carbon nanotube composites could act as efficient transport media for charges, which were originally dissociated. This study has demonstrated that carbon nanotubes can be used as functional materials in organic optoelectronic devices and enhance the charge transport, hence the efficiency in such devices.

  20. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

    PubMed

    Baugher, Britton W H; Churchill, Hugh O H; Yang, Yafang; Jarillo-Herrero, Pablo

    2014-04-01

    The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W(-1) and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials. PMID:24608231

  1. Investigation of charge transport and electromagnetic effects in advanced microelectronics and optoelectronics

    SciTech Connect

    Kwan, T.; Booth, T.; Gray, M.

    1996-07-01

    This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The next generation of electronic microchips will utilize components with sub-micron feature size and optoelectronic devices with picosecond response time. Fundamental understanding of the device performance can only be obtained through first principles physics modeling of charge transport and electromagnetic effects in realistic geometries with material interfaces and dispersive properties. We have developed a general model incorporating important physics such as charge transport processes in materials with multilevel band structures and electromagnetic effects to simulate device characteristics. Accurate treatment of material interfaces and boundaries is included. The Monte Carlo charge transport is coupled self-consistently to Maxwell`s equations to accurately model scattering processes in the presence of an externally biased potential. This detailed multidimensional simulation capability is compared with and verified by experimental data, and could become an industrial standard for benchmarking and improving the {open_quotes}reduced model{close_quotes} codes used for semiconductor design. Specific tasks are the extension of existing capabilities in particle-in-cell plasma simulation technique and Monte Carlo charge transport to study the physics of charged particle dynamics in realistic microelectronic devices, such as bipolar semiconductors, heterojunction transistors, and optoelectronic switches. Our approach has been based on the coupled particle-in-cell/Monte Carlo technique, which can simultaneously treat both electromagnetic wave propagation and charged-particle transport.

  2. Model of an instrumented optoelectronic transmission system in HDL-A and VHDL-AMS

    NASA Astrophysics Data System (ADS)

    Uhring, Wilfried; Herve, Yannick; Pecheux, Francois

    1999-10-01

    The paper presents the model of a complete multidomain system involving two opto-electronic components: the emitter and the receiver. It is written in Anacad Mentor Graphics HDL-A and integrates the propagation environment characteristics and the thermal behavior of each components. First, packages describing electrical, optical, and thermal behavior of each component. First, packages describing electrical, optical, and thermal domains are detailed. Second, the models of the components are explained. They include an electrical, a thermal and an optical part, the latter being particularly developed. Third, the models of the propagation environment, an optical fiber and the related free space, are presented. The components are assembled to build a compete instrumented opto-electronic transmission system. The laser diode emits a digital clock through an optical fiber to a photodiode. The laser diode is thermal controlled through a Peletier module, which can be deactivated as needed. The alignment of the laser diode with the optical fiber can be studied/modified too. The HDL-A resulting models have been simulated in the ELDO environment. Results show that thermal variations influence the quality of the transmission.

  3. Vehicle tethered aerostat optoelectronic monitoring platform system for Shanghai World EXPO

    NASA Astrophysics Data System (ADS)

    Zhou, Weihu; Wang, Yawei; Han, Xiaoquan; Yuan, Jiang

    2010-08-01

    To monitor the whole Shanghai Expo Park, a vehicle tethered aerostat optoelectronic monitoring platform with the characteristic of time-sensitive and all-weather monitoring is described in detail in this paper, which is hung beneath the tethered balloon and equipped with a variety of payloads, including visible light monitoring system, infrared monitoring system, hyperspectral monitoring system, GPS/INS system, monitoring and control system and so on. These equipments can be used for real-time monitoring, environmental monitoring, and ground target location of Shanghai Expo Park. The output High Definition (HD) image of Shanghai Expo Park from visible light monitoring system is clear and stable, and the stabilization accuracy of visual axis is 0.07°(3δ). The optoelectronic monitoring platform system uses the target location technology based on Global Position System/Inertial Navigation System (GPS/INS) system to output real-time location data compatible with Geographic Information System (GIS). Test results show that the maximum errors between the location results (latitude and longitude) solved by the target location program and the reference target are 0.2 0/00(latitude) and 2 0/00(longitude). Now the whole system has been used for surveillance the Shanghai Expo Park since April 2010.

  4. Transient and Post-irradiation Response of Optoelectronic Devices to Ionizing Radiation

    NASA Astrophysics Data System (ADS)

    Haider, F. A. A.; Chee, F. P.

    2015-01-01

    Space and ground level electronic equipment with semiconductor devices are subjected to the deleterious effects by radiation. This paper is attempted to present the transient and post-irradiation response of optoelectronic devices to gamma (γ) rays utilizing cobalt-60. In situ measurements were made on the devices under test (DUTs) up to a total dose of 60 krad followed by a post-irradiation not in-flux test for eight hours. Current transfer ratio (CTR) with is the vital merit of the optoelectronic system is found to decrease remarkably with the absorbed dose. This degradation is induced by the interaction of the energetic photons from gamma rays via two main mechanisms. The dominant effect is the mechanism by ionization while the secondary is by displacement. This radiation effect is found to arouse either a permanent or temporarily damage in the DUTs depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by gamma rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation. The full damage cascade phenomenon in the DUTs is calculated via the simulation.

  5. Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

    NASA Astrophysics Data System (ADS)

    Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

    2016-03-01

    The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from  -699 to  -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.

  6. Al-doped ZnO aligned nanorod arrays for opto-electronic and sensor applications

    NASA Astrophysics Data System (ADS)

    Holloway, T.; Mundle, R.; Dondapati, H.; Konda, R. B.; Bahoura, M.; Pradhan, A. K.

    2012-04-01

    We report on the growth of vertically aligned Al:ZnO nanorod arrays synthesized by the hydrothermal technique at considerably low temperature on a sputtered Al:ZnO seed layer. The morphology demonstrates that the nanorod arrays maintain remarkable alignment along the c-axis over a large area. The optoelectronic properties of nanorod arrays on Al:ZnO/p-Si seed layer with SiO2 have been illustrated. The photocurrent is significantly reduced in nanorod arrays on AZO/SiO2/p-Si heterojunction due to multiple scattering phenomena associated with the nanorod arrays. The optical properties of the AZO film with and without the AZO nanorod arrays were investigated. Also the effects of an intermediate layer in the AZO/P-Si heterojunction structure with and without the AZO nanorod array present were explored. All the various intermediate layers displayed photovoltaic effect behavior, especially with the AZO/SiO2/P-Si heterojunction structure, which exhibited ideal diode behavior. The optoelectronic properties of nanorod arrays on AZO/P-Si seed layer with SiO2 have been illustrated. The photocurrent is significantly reduced in nanorod arrays on AZO/SiO2/P-Si heterojunction due to multiple scattering phenomena associated with the nanorod arrays. The results have tremendous impact for sensor fabrication, including glucose sensor.

  7. Optoelectronic and excitonic properties of oligoacenes and one-dimensional nanostructures.

    SciTech Connect

    Hsieh, Timothy H.; Wong, Brian M.

    2010-09-01

    The optoelectronic and excitonic properties in a series of linear acenes are investigated using range-separated methods within time-dependent density functional theory (TDDFT). In these highly-conjugated systems, we find that the range-separated formalism provides a substantially improved description of excitation energies compared to conventional hybrid functionals, which surprisingly fail for the various low-lying valence transitions. Moreover, we find that even if the percentage of Hartree-Fock exchange in conventional hybrids is re-optimized to match wavefunction-based CC2 benchmark calculations, they still yield serious errors in excitation energy trends. Based on an analysis of electron-hole transition density matrices, we also show that conventional hybrid functionals overdelocalize excitons and underestimate quasiparticle energy gaps in the acene systems. The results of the present study emphasize the importance of a range-separated and asymptotically-correct contribution of exchange in TDDFT for investigating optoelectronic and excitonic properties, even for these simple valence excitations.

  8. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide.

    PubMed

    Li, Hong; Contryman, Alex W; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M; Li, Ju; Manoharan, Hari C; Zheng, Xiaolin

    2015-01-01

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this 'artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics. PMID:26088550

  9. Synthesis, structure, and opto-electronic properties of organic-based nanoscale heterojunctions

    NASA Astrophysics Data System (ADS)

    Rezek, Bohuslav; Čermák, Jan; Kromka, Alexander; Ledinský, Martin; Hubík, Pavel; Mareš, Jiří J.; Purkrt, Adam; Cimrová, Vĕra; Fejfar, Antonín; Kočka, Jan

    2011-12-01

    Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV) and short diffusion length (10 nm) of excitons in organic materials. Inherently, interplay of microscopic structural, chemical, and opto-electronic properties plays crucial role. We show that employing and combining advanced scanning probe techniques can provide us significant insight into the correlation of these properties. By adjusting parameters of contact- and tapping-mode atomic force microscopy (AFM), we perform morphologic and mechanical characterizations (nanoshaving) of organic layers, measure their electrical conductivity by current-sensing AFM, and deduce work functions and surface photovoltage (SPV) effects by Kelvin force microscopy using high spatial resolution. These data are further correlated with local material composition detected using micro-Raman spectroscopy and with other electronic transport data. We demonstrate benefits of this multi-dimensional characterizations on (i) bulk heterojunction of fully organic composite films, indicating differences in blend quality and component segregation leading to local shunts of photovoltaic cell, and (ii) thin-film heterojunction of polypyrrole (PPy) electropolymerized on hydrogen-terminated diamond, indicating covalent bonding and transfer of charge carriers from PPy to diamond.

  10. Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals.

    PubMed

    Jang, Sukjae; Hwang, Euyheon; Lee, Youngbin; Lee, Seungwoo; Cho, Jeong Ho

    2015-04-01

    The advantages of graphene photodetectors were utilized to design a new multifunctional graphene optoelectronic device. Organic semiconductors, gold nanoparticles (AuNPs), and graphene were combined to fabricate a photodetecting device with a nonvolatile memory function for storing photonic signals. A pentacene organic semiconductor acted as a light absorption layer in the device and provided a high hole photocurrent to the graphene channel. The AuNPs, positioned between the tunneling and blocking dielectric layers, acted as both a charge trap layer and a plasmonic light scatterer, which enable storing of the information about the incident light. The proposed pentacene-graphene-AuNP hybrid photodetector not only performed well as a photodetector in the visible light range, it also was able to store the photonic signal in the form of persistent current. The good photodetection performance resulted from the plasmonics-enabled enhancement of the optical absorption and from the photogating mechanisms in the pentacene. The device provided a photoresponse that depended on the wavelength of incident light; therefore, the signal information (both the wavelength and intensity) of the incident light was effectively committed to memory. The simple process of applying a negative pulse gate voltage could then erase the programmed information. The proposed photodetector with the capacity to store a photonic signal in memory represents a significant step toward the use of graphene in optoelectronic devices. PMID:25811444

  11. Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector.

    PubMed

    Ko, Pil Ju; Abderrahmane, Abdelkader; Takamura, Tsukasa; Kim, Nam-Hoon; Sandhu, Adarsh

    2016-08-12

    Two-dimensional (2D) layered materials exhibit unique optoelectronic properties at atomic thicknesses. In this paper, we fabricated metal-semiconductor-metal based photodetectors using layered gallium selenide (GaSe) with different thicknesses. The electrical and optoelectronic properties of the photodetectors were studied, and these devices showed good electrical characteristics down to GaSe flake thicknesses of 30 nm. A photograting effect was observed in the absence of a gate voltage, thereby implying a relatively high photoresponsivity. Higher values of the photoresponsivity occurred for thicker layers of GaSe with a maximum value 0.57 AW(-1) and external quantum efficiency of of 132.8%, and decreased with decreasing GaSe flake thickness. The detectivity was 4.05 × 10(10) cm Hz(1/2) W(-1) at 532 nm laser wavelength, underscoring that GaSe is a promising p-type 2D material for photodetection applications in the visible spectrum. PMID:27354428

  12. First principles study of scandium nitride and yttrium nitride alloy system: Prospective material for optoelectronics

    NASA Astrophysics Data System (ADS)

    Haq, Bakhtiar Ul; Afaq, A.; Abdellatif, Galila; Ahmed, R.; Naseem, S.; Khenata, R.

    2015-09-01

    Besides many other state of the art promising applications, transition metal (TM) nitride materials are intensively investigated on account of considered potential materials for optoelectronic applications. In this study computations pertaining to structural, electronic as well as the optical properties of Scandium Nitride (ScN), Yttrium Nitride (YN) and their mutual alloying (ScxY1-xN), for x = 0.25, 0.50, 0.75, are presented. These computations are carried out by employing the full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) method designed within density functional theory (DFT). Structural parameters are calculated at the level of Perdew Burke and Ernzerhof (PBE) parameterized generalized gradient approximations (GGA), where to investigate electronic and optical properties, Tran-Blaha modified Becke-Johnson (mBJ) potential is involved. From our calculations, a very small variation is noted in lattice constant values of ScxY1-xN alloying system as a function of Y content, reflecting to appropriate alloying of ScN and YN. Moreover, effect of the site preference for two different configurations is also analyzed. The lower absorption of ScxY1-xN system in the visible light region together with less than 30% reflectivity for entire alloying range lead to their transparent nature. Additionally fascinating characteristics, like high mechanical strength, tunable energy band gap, transparent nature, and lower reflectivity of the ScYN alloying system provoke their further potential in optoelectronics.

  13. A complex portable optoelectronic setup for on-site interventions: case studies

    NASA Astrophysics Data System (ADS)

    Simileanu, Monica; Maracineanu, Walter; Deciu, Cristian; Striber, Joakim; Radvan, Roxana

    2006-06-01

    A complex portable optoelectronic setup for on site interventions introduces an accessible concept that incorporates latest technologies and techniques. Its components are highly technical, extremely versatile, addressing a wide range of materials: Systems for laser cleaning in microscopic field that assures a high cleaning precision, and also, coupled with other monitoring systems can provide photo-video recordings, thermovision analysis, UV-VIS-NIR multispectral analysis; results of the latest researches: qualitative evaluation techniques using LIF, LIBS and 3D laser scanning of large objects - up to some historical buildings; UV-VIS Spectroscopy concerning transmission and reflection spectra measurements, as well as Colorimetry can provide helpful information for artworks composite materials and degradations characterization; microclimate conditions and environmental pollutant agents monitoring; large surfaces laser cleaning system is also integrated to the other operations and systems presented. Optimization of the functional structure, as well as the operating precision of the techniques are established in direct corroboration with important case studies such as thermal emissivity control for non-contact crust layer cleaning evaluation and integration of optoelectronical techniques in conservation of Stavropoleos Church from Bucharest.

  14. Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

    PubMed Central

    Li, Hong; Contryman, Alex W.; Qian, Xiaofeng; Ardakani, Sina Moeini; Gong, Yongji; Wang, Xingli; Weisse, Jeffery M.; Lee, Chi Hwan; Zhao, Jiheng; Ajayan, Pulickel M.; Li, Ju; Manoharan, Hari C.; Zheng, Xiaolin

    2015-01-01

    The isolation of the two-dimensional semiconductor molybdenum disulphide introduced a new optically active material possessing a band gap that can be facilely tuned via elastic strain. As an atomically thin membrane with exceptional strength, monolayer molybdenum disulphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light spectrum, with calculations showing the modified electronic potential emanating from point-induced tensile strain perturbations mimics the Coulomb potential in a mesoscopic atom. Here we realize and confirm this ‘artificial atom' concept via capillary-pressure-induced nanoindentation of monolayer molybdenum disulphide from a tailored nanopattern, and demonstrate that a synthetic superlattice of these building blocks forms an optoelectronic crystal capable of broadband light absorption and efficient funnelling of photogenerated excitons to points of maximum strain at the artificial-atom nuclei. Such two-dimensional semiconductors with spatially textured band gaps represent a new class of materials, which may find applications in next-generation optoelectronics or photovoltaics. PMID:26088550

  15. Opto-electronic DNA chip-based integrated card for clinical diagnostics.

    PubMed

    Marchand, Gilles; Broyer, Patrick; Lanet, Véronique; Delattre, Cyril; Foucault, Frédéric; Menou, Lionel; Calvas, Bernard; Roller, Denis; Ginot, Frédéric; Campagnolo, Raymond; Mallard, Frédéric

    2008-02-01

    Clinical diagnostics is one of the most promising applications for microfluidic lab-on-a-chip or lab-on-card systems. DNA chips, which provide multiparametric data, are privileged tools for genomic analysis. However, automation of molecular biology protocol and use of these DNA chips in fully integrated systems remains a great challenge. Simplicity of chip and/or card/instrument interfaces is amongst the most critical issues to be addressed. Indeed, current detection systems for DNA chip reading are often complex, expensive, bulky and even limited in terms of sensitivity or accuracy. Furthermore, for liquid handling in the lab-on-cards, many devices use complex and bulky systems, either to directly manipulate fluids, or to ensure pneumatic or mechanical control of integrated valves. All these drawbacks prevent or limit the use of DNA-chip-based integrated systems, for point-of-care testing or as a routine diagnostics tool. We present here a DNA-chip-based protocol integration on a plastic card for clinical diagnostics applications including: (1) an opto-electronic DNA-chip, (2) fluid handling using electrically activated embedded pyrotechnic microvalves with closing/opening functions. We demonstrate both fluidic and electric packaging of the optoelectronic DNA chip without major alteration of its electronical and biological functionalities, and fluid control using novel electrically activable pyrotechnic microvalves. Finally, we suggest a complete design of a card dedicated to automation of a complex biological protocol with a fully electrical fluid handling and DNA chip reading. PMID:17636395

  16. Enhanced multi-hop operation using hybrid optoelectronic router with time-to-live-based selective forward error correction.

    PubMed

    Nakahara, Tatsushi; Suzaki, Yasumasa; Urata, Ryohei; Segawa, Toru; Ishikawa, Hiroshi; Takahashi, Ryo

    2011-12-12

    Multi-hop operation is demonstrated with a prototype hybrid optoelectronic router for optical packet switched networks. The router is realized by combining key optical/optoelectronic device/sub-system technologies and complementary metal-oxide-semiconductor electronics. Using the hop count monitored via the time-to-live field in the packet label, the optoelectronic buffer of the router performs buffering with forward error correction selectively for packets degraded due to multiple hopping every N hops. Experimental results for 10-Gb/s optical packets confirm that the scheme can expand the number of hops while keeping the bit error rate low without the need for optical 3R regenerators at each node. PMID:22274034

  17. The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells

    PubMed Central

    Chen, Qi; Zhou, Huanping; Fang, Yihao; Stieg, Adam Z.; Song, Tze-Bin; Wang, Hsin-Hua; Xu, Xiaobao; Liu, Yongsheng; Lu, Shirong; You, Jingbi; Sun, Pengyu; McKay, Jeff; Goorsky, Mark S.; Yang, Yang

    2015-01-01

    Perovskite photovoltaics offer a compelling combination of extremely low-cost, ease of processing and high device performance. The optoelectronic properties of the prototypical CH3NH3PbI3 can be further adjusted by introducing other extrinsic ions. Specifically, chlorine incorporation has been shown to affect the morphological development of perovksite films, which results in improved optoelectronic characteristics for high efficiency. However, it requires a deep understanding to the role of extrinsic halide, especially in the absence of unpredictable morphological influence during film growth. Here we report an effective strategy to investigate the role of the extrinsic ion in the context of optoelectronic properties, in which the morphological factors that closely correlate to device performance are mostly decoupled. The chlorine incorporation is found to mainly improve the carrier transport across the heterojunction interfaces, rather than within the perovskite crystals. Further optimization according this protocol leads to solar cells achieving power conversion efficiency of 17.91%. PMID:26068804

  18. Self-starting ultralow-jitter pulse source based on coupled optoelectronic oscillators with an intracavity fiber parametric amplifier.

    PubMed

    Dahan, David; Shumakher, Evgeny; Eisenstein, Gadi

    2005-07-01

    A self-starting optical pulse source based on mutually coupled optoelectronic oscillators is described. The system employs a phototransistor-based microwave oscillator that is coupled to a fiber cavity optoelectronic oscillator with an intracavity fiber parametric amplifier. It self-starts and exhibits 3 ps pulses at a rate of 10 GHz with extremely low jitter of 30, 29, and 40 fs (for integration bandwidths of 100 Hz-15 kHz, 500 Hz-1 MHz, and 100 Hz-1 MHz, respectively). PMID:16075517

  19. Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

    PubMed

    Huang, Fei; Wu, Hongbin; Cao, Yong

    2010-07-01

    Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references). PMID:20571672

  20. Reproducibility and day time bias correction of optoelectronic leg volumetry: a prospective cohort study

    PubMed Central

    2011-01-01

    Background Leg edema is a common manifestation of various underlying pathologies. Reliable measurement tools are required to quantify edema and monitor therapeutic interventions. Aim of the present work was to investigate the reproducibility of optoelectronic leg volumetry over 3 weeks' time period and to eliminate daytime related within-individual variability. Methods Optoelectronic leg volumetry was performed in 63 hairdressers (mean age 45 ± 16 years, 85.7% female) in standing position twice within a minute for each leg and repeated after 3 weeks. Both lower leg (legBD) and whole limb (limbBF) volumetry were analysed. Reproducibility was expressed as analytical and within-individual coefficients of variance (CVA, CVW), and as intra-class correlation coefficients (ICC). Results A total of 492 leg volume measurements were analysed. Both legBD and limbBF volumetry were highly reproducible with CVA of 0.5% and 0.7%, respectively. Within-individual reproducibility of legBD and limbBF volumetry over a three weeks' period was high (CVW 1.3% for both; ICC 0.99 for both). At both visits, the second measurement revealed a significantly higher volume compared to the first measurement with a mean increase of 7.3 ml ± 14.1 (0.33% ± 0.58%) for legBD and 30.1 ml ± 48.5 ml (0.52% ± 0.79%) for limbBF volume. A significant linear correlation between absolute and relative leg volume differences and the difference of exact day time of measurement between the two study visits was found (P < .001). A therefore determined time-correction formula permitted further improvement of CVW. Conclusions Leg volume changes can be reliably assessed by optoelectronic leg volumetry at a single time point and over a 3 weeks' time period. However, volumetry results are biased by orthostatic and daytime-related volume changes. The bias for day-time related volume changes can be minimized by a time-correction formula. PMID:21974893

  1. Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics

    NASA Astrophysics Data System (ADS)

    Chen, Guannan

    Understanding the effects of finite size and dimensionality on the interaction of light with nanoscale semiconductor heterostructure is central to identifying and exploiting novel modes in optoelectronic devices. In type-I heterostructured core-shell GaAs/AlxGa1-xAs nanowires, the real space transfer (RST) of photogenerated hot electrons across the interface from the GaAs core to the AlxGa1-xAs shell forms the basis of a new family of optoelectronic devices by a carefully designed and optimized nanofabrication process. Due to the large mobility difference, we observed negative differential resistance (NDR) on single nanowire devices. External modulation of the transfer rates, manifested as a large tunability of the voltage onset of NDR, is achieved using three different modes: electrostatic gating, incident photon flux, and photon energy. In this dissertation, the physics of coupling of external control to transfer rate was investigated. The combined influences of geometric confinement, heterojunction shape and carrier scattering on hot-electron transfer is discussed. Temperature-dependent transport study under monochromatic tunable laser illumination reveals an ultrafast carrier dynamics related to RST of excess carriers, which provides an insight into hot carrier cooling. Device element showing adjustable phase shift and frequency doubling of ac modulation is demonstrated. For a full understanding, Carrier transport properties are probed through electron beam induced current, which is capable of imaging sub-surface feature in excess carrier transport. Along with simulation of injected electron trajectories, selective probing of core and shell by tuning electron beam energies reveals axial and bias dependent transport along parallel channels. The drift and diffusion component of the excess carrier current is deconvoluted from a coupled decay length, from which lower than bulk shell electron mobility is extracted. A precise knowledge of band edge discontinuities at

  2. Nanocrystal quantum dots as building blocks for artificial solids and their applications in optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Joshua Jongwoo

    Nanocrystal quantum dots exhibit size-dependent optoelectronic properties and provide intriguing scientific and technological opportunities. Most proposed technologies based nanocrystals depend on macroscopic functional assemblies of nanocrystals in which the nanocrystals interact with each other to give rise to new collective properties - also called as artificial solids. As in the analogous atomic crystals, the optoelectronic properties of artificial solids are governed by (1) the energy levels of nanocrystals, (2) electronic coupling between nanocrystals, and (3) the symmetry of the nanocrystal superlattice. These issues add many levels of complexity to the design of artificial solids and, for the successful development of nanocrystal based technologies, it is crucial to gain deep understanding on the structure-property relationship of nanocrystals on multiple length scales. In this dissertation, I will present studies that show insights into the three governing factors of the optoelectronic properties of artificial solids mentioned above. (1) Nanocrystal energy levels: a direct correlation between interfacial energy level offsets between lead chalcogenide nanocrystals and ZnO layers with photovoltaic device performance is presented. Based on obtained insights on the size dependent photovoltaic properties of lead chalcogenide nanocrystals, first demonstration of solution processed nanocrystal tandem solar cells was achieved. (2) Inter-nanocrystal electronic coupling: rates of photogenerated exciton dissociation in nanocrystal assemblies as a function of inter-nanocrystal spacing are probed. The results show that excitons dissociate via tunneling induced delocalization among neighboring nanocrystals. Based on insights obtained from this work, drastically improved performance of solution processed nanocrystal infrared light emitting diodes is demonstrated. (3) Nanocrystal superlattice symmetry: interaction between ligand molecules on the surface of nanocrystals

  3. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  4. DOC II 32-bit digital optical computer: optoelectronic hardware and software

    NASA Astrophysics Data System (ADS)

    Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.

    1991-12-01

    This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.

  5. The method of testing of the attitude reference systems with optoelectronic sensors

    NASA Astrophysics Data System (ADS)

    Szelmanowski, Andrzej; Michalak, Slawomir

    2003-09-01

    What the paper deals with is the method of testing of the attitude reference systems with the coning excitation/motion applied. A theoretical description of the excitation at issue has been given and followed with a comparative analysis of the excitation generated in the UPG-48 station with a tilting platform. Experimental data of testing of the attitude and heading reference system AHRS LCR-92 system for the non-holonomical excitation/motion have been compared with results effected by some simulation-based tests of numerical models of the attitude and heading reference systems with the optoelectronic sensors. On the grounds of some numerical-simulation-effected findings gained with the AutoCAD packet, a concept of a coning-excitation-generating measuring station has been developed at the Air Force Institute of Technology and presented in this paper.

  6. Estimation of the absolute position of mobile systems by an optoelectronic processor

    NASA Technical Reports Server (NTRS)

    Feng, Liqiang; Fainman, Yeshaiahu; Koren, Yoram

    1992-01-01

    A method that determine the absolute position of a mobile system with a hybrid optoelectronic processor has been developed. Position estimates are based on an analysis of circular landmarks that are detected by a TV camera attached to the mobile system. The difference between the known shape of the landmark and its image provides the information needed to determine the absolute position of the mobile system. For robust operation, the parameters of the landmark image are extracted at high speeds using an optical processor that performs an optical Hough transform. The coordinates of the mobile system are computed from these parameters in a digital co-processor using fast algorithms. Different sources of position estimation errors have also been analyzed, and consequent algorithms to improve the navigation performance of the mobile system have been developed and evaluated by both computer simulation and experiments.

  7. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

    PubMed

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~10(4) cm/V · s) at room temperature and a low mass density (1.71 g/cm(3)), making it a promising material for optoelectronic applications. PMID:26395926

  8. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  9. Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics.

    PubMed

    Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Kang, Zhan; Rogers, John A

    2010-11-01

    Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices. PMID:20953185

  10. Optoelectronic response and excitonic properties of monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Ben Amara, Imen; Ben Salem, Emna; Jaziri, Sihem

    2016-08-01

    Ab initio, electronic energy bands of MoS2 single layer are reported within the local density functional approximation. The inclusion of spin orbit coupling reveals the presence of two excitons A and B. We also discuss the change of physical properties of MoS2 from multilayer and bulk counterparts. The nature of the band gap changes from indirect to direct when the thickness is reduced to a single monolayer. The imaginary and real dielectric functions are investigated. Refractive index and birefringence are also reported. The results suggest that MoS2 is suitable for potential applications in optoelectronic and photovoltaic devices. The ab initio study is essential to propose the crucial parameters for the analytical model used for A-B exciton properties of the monolayer MoS2. From a theoretical point of view, we consider how the exciton behavior evolves under environmental dielectrics.

  11. Optoelectronic properties and charge transfer in donor-acceptor all-conjugated diblock copolymers.

    SciTech Connect

    Botiz, I.; Schaller, R. D.; Verduzco, R.; Darling, S. B.

    2011-05-12

    All-conjugated block copolymers, which can self-assemble into well-ordered morphologies, provide exciting opportunities to rationally design and control the nanoscale organization of electron-donor and electron-acceptor moieties in optoelectronic active layers. Here we report on the steady-state and time-resolved optical characterization of block copolymer films and solutions containing poly(3-hexylthiophene) as the donor block and poly(9,9-dioctylfluorene) with and without copolymerization with benzothiadiazole as the acceptor block. Transient absorption measurements suggest rapid charge transfer occurs in both systems, with higher efficiency observed in the latter composition. These results indicate that this class of materials has promise in preparing highly ordered bulk heterojunction all-polymer organic photovoltaic devices.

  12. Investigations of DC power supplies with optoelectronic transducers and RF energy converters

    NASA Astrophysics Data System (ADS)

    Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.

    2016-04-01

    Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.

  13. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    NASA Astrophysics Data System (ADS)

    Wassweiler, Ella; Toor, Fatima

    2016-06-01

    The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  14. Chemical and Structural Diversity in Eumelanins – Unexplored Bio-Optoelectronic Materials**

    PubMed Central

    d’Ischia, Marco; Napolitano, Alessandra; Pezzella, Alessandro; Meredith, Paul; Sarna, Tadeusz

    2009-01-01

    Eumelanins, the characteristic black insoluble and heterogeneous bio-polymers of human skin, hair and eyes, have intrigued and challenged generations of chemists, physicists and biologists because of their unique structural and optoelectronic properties. Recently, an organic chemistry approach has been combined with advanced spectroscopic and imaging techniques, theoretical calculations and methods of condensed matter physics to gradually force these materials to reveal their secrets. Here we review the latest advances in the field with a view to showing how the emerging knowledge is not only helping us explain eumelanin functionality, but may also be translated into effective strategies for exploiting their properties to create a new class of biologically inspired high tech materials. PMID:19294706

  15. Smart-pixel spatial light modulator for incorporation in an optoelectronic neural network.

    PubMed

    Bar-Tana, I; Sharpe, J P; McKnight, D J; Johnson, K M

    1995-02-01

    We present the design, fabrication, and testing of a novel liquid-crystal-on-silicon optically addressed spatial light modulator for use as a weight matrix in an ART-1 optoelectronic neural processor. Each pixel in the 50 x 83 element array occupies 75 microm x 75 microm and consists of a photodetector, a threshold circuit, a 1-bit (flip-flop) memory element, and a liquid-crystal modulating mirror. The array is designed to switch all the pixels initially to the ON state. Subsequently each pixel is independently switched to the OFF state if a superthreshold amount of light falls upon the pixel's photodetector. The device has a contrast ratio of 20:1, a switch-on time (10-90% rise time) of 500 micros, and a switch-off time of ~500 micros (depending on the externally set threshold). Measured device uniformities and interpixel coupling are also described. PMID:19859168

  16. New possibility on InZnO nano thin film for green emissive optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sugumaran, Sathish; Noor Bin Ahmad, Mohd; Faizal Jamlos, Mohd; Bellan, Chandar Shekar; Chandran, Sharmila; Sivaraj, Manoj

    2016-04-01

    Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.

  17. Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

    NASA Technical Reports Server (NTRS)

    Adams, Michael J. (Editor)

    1987-01-01

    The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

  18. Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices

    NASA Astrophysics Data System (ADS)

    Shin, Sang-Baie; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2013-04-01

    In this study, the prototype optoelectronic integrated circuits (OEICs) operating with optical input signals were designed and fabricated. A back-side-illuminated (BSI) photodiode was designed and demonstrated by a newly proposed practical method, utilizing micro-electromechanical systems (MEMS) and postcomplement metal oxide semiconductor (CMOS) processes. Additional fabrication processes for the BSI photodiode were proposed and described in detail in this paper. The operational amplifier for amplification of the optical current by the BSI photodiode as the transimpedance amplifier was designed and fabricated. And the pulse width modulation (PWM) wave generator was implemented for modulating optical signals as the prototype OEIC device. The maximum quantum efficiency of 28.4% was obtained from the fabricated BSI photodiode. Output signals of PWM were successfully controlled by the generated optical current of the BSI photodiode.

  19. Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

    SciTech Connect

    Durbin, Stephen M.; Caffee, Marc; Savikhin, Sergei; Mahmood, Aamer; Dufresne, Eric M.; Wen, Haidan; Li, Yuelin

    2013-02-04

    Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the {approx}50 ps x-ray pulse width convoluted with the {approx}200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.

  20. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    PubMed Central

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications. PMID:26395926