Science.gov

Sample records for oxide liti2o4 thin

  1. Epitaxial thin films of the superconducting spinel oxide LiTi2O4

    NASA Astrophysics Data System (ADS)

    Chopdekar, Rajesh; Suzuki, Yuri

    2006-03-01

    Lithium titanate is the only superconducting spinel oxide documented in literature. Related oxide spinels[1] such as the heavy fermion system LiV2O4 and charge-ordered LiMn2O4 indicate that electron correlations are strong in these systems. We have fabricated epitaxial films of LiTi2O4 on MgAl2O4 and MgO single crystalline substrates to explore such behavior in thin film form. Atomic force microscopy indicates <1nm RMS surface roughness, and 2- and 4-circle x-ray diffraction confirms film epitaxy. Films on MgAl2O4 have a critical temperature Tc of up to 11.3K with a resistivity transition width of 0.25K, while films on MgO have lower Tc with broader transitions. Magnetization vs. magnetic field of a zero-field cooled sample shows Meissner shielding consistent with Type II superconductors. Such films can be used in spin-polarization measurements of complex oxide half-metallic thin films, as well as fundamental studies of the effect of epitaxial strain, microstructure, and cation disorder/substitution on the superconducting properties of LiTi2O4. [1] M. Lauer et al, Phys Rev B 69, 075117 (2004).

  2. Magnetic field dependence of low-temperature specific heat of the spinel oxide superconductor LiTi2 O4

    NASA Astrophysics Data System (ADS)

    Sun, C. P.; Lin, J.-Y.; Mollah, S.; Ho, P. L.; Yang, H. D.; Hsu, F. C.; Liao, Y. C.; Wu, M. K.

    2004-08-01

    Magnetic field dependence of low temperature specific heat of spinel oxide superconductor LiTi2O4 has been elaborately investigated. In the normal state, the obtained electronic coefficient of specific heat γn=19.15mJ/molK2 , the Debye temperature ΘD=657K and some other parameters are compared with those reported earlier. The superconducting transition at Tc˜11.4K is very sharp (ΔTc˜0.3K) and the estimated δC/γnTc is ˜1.78 . In the superconducting state, the best fit of data leads to the electronic specific heat Ces/γnTc=9.87exp(-1.58Tc/T) without field and γ(H)∝H0.95 with fields. In addition, Hc2(0)˜11.7T , Hc(0)˜0.32T , ξGL(0)˜55Å , λGL(0)˜1600Å , and Hc1(0)˜26mT are estimated from the Werthamer-Helfand-Hohenberg (WHH) theory or other relevant relations. All results from the present study indicate that LiTi2O4 can be well described by a typical type-II, BCS-like, moderate coupling, and fully gapped superconductor in the dirty limit. It is further suggested that LiTi2O4 is a moderately electron-electron correlated system.

  3. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    PubMed

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-01-01

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors. PMID:25990638

  4. Growth and characterization of superconducting spinel oxide LiTi2O4 thin films

    SciTech Connect

    Chopdekar, R.V.; Wong, F.; Takamura, Y.; Arenholz, E.; Suzuki, Y.

    2009-03-10

    Epitaxial films of LiTi{sub 2}O{sub 4} on single crystalline substrates of MgAl{sub 2}O{sub 4}, MgO, and SrTiO{sub 3} provide model systems to systematically explore the effects of lattice strain and microstructural disorder on the superconducting state. Lattice strain that affects bandwidth gives rise to variations in the superconducting and normal state properties. Microstructural disorder, such as antiphase boundaries that give rise to Ti network disorder, reduces the critical temperature, and Ti network disorder combined with Mg interdiffusion lead to a much more dramatic effect on the superconducting state. Surface sensitive X-ray absorption spectroscopy has identified Ti to retain site symmetry and average valence of the bulk material regardless of film thickness.

  5. Pulsed-laser deposition of superconducting LiTi2O4 ultrathin films

    NASA Astrophysics Data System (ADS)

    Oshima, Takayoshi; Yokoyama, Kosuke; Niwa, Mifuyu; Ohtomo, Akira

    2015-06-01

    We report epitaxial growth, structural characterizations and thickness-dependent superconducting properties of LiTi2O4 films grown on (111) MgAl2O4 substrates by using pulsed-laser deposition. The variations of growth temperature (Tg) and excess Li composition of target materials were found to be crucial for improving the crystallinity, as verified by X-ray diffraction rocking curve and the in-plane domain configuration. The crystallinity of the desired LiTi2O4 phase improved with increasing Tg, whereas the inclusion of Li-deficient phases became more significant due to high sublimation rate of Li species. The use of the excess Li targets allowed us to elevate Tg up to 750 °C (Li/Ti=1.0) with keeping high crystallinity and phase purity. For films grown under the best condition, the superconducting transition was observed near 12 K even when thickness was as thin as 9 nm.

  6. Reversible electrochemical modulation of the superconducting transition temperature of LiTi2O4 ultrathin films by ionic liquid gating

    NASA Astrophysics Data System (ADS)

    Maruyama, S.; Shin, J.; Zhang, X.; Suchoski, R.; Yasui, S.; Jin, K.; Greene, R. L.; Takeuchi, I.

    2015-10-01

    We demonstrate in situ modulation of the superconducting transition temperature (Tc) of LiTi2O4 thin films by ionic liquid gating. 15 nm thick LiTi2O4 thin films grown on MgAl2O4 substrates with the pristine Tc of 11.5 K was patterned into electric double-layer transistor devices for gating using ionic liquid with or without Li+ ions. The Tc of the LiTi2O4 thin film was found to decrease with a negative gate voltage for gating with either pure ionic liquid or Li+ containing ionic liquid. On the other hand, the recovery of Tc is observed at a positive gate voltage only for gating with the Li+ containing ionic liquid. The present observation suggests the possibility of reversible electrochemical modulation of superconducting properties by lithiation and delithiation.

  7. Lithium intercalation cells LiMn 2O 4/LiTi 2O 4 without metallic lithium

    NASA Astrophysics Data System (ADS)

    Manickam, M.; Takata, M.

    Rechargeable lithium cells can be made with two different intercalation compounds as the positive and negative electrodes, which are safer than the battery technology using pure Li metal. In this paper, we present our study of the Li ion type battery that uses LiTi 2O 4 as the negative electrode, which is coupled with a strongly oxidizing intercalation compound, spinel LiMn 2O 4, as the positive electrode has been found to solve problems associated with the use of metallic lithium at the expense of lowering the overall cell voltage. Preliminary electrochemical data revealed that this Li ion type battery "LiMn 2O 4/LiTi 2O 4" exhibits a low performance in terms of capacity. Li cycling efficiency is examined with mixed solvents as electrolyte. With improvements in capacity, materials such as these could improve the over all performance of secondary lithium intercalation cells.

  8. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction.

    PubMed

    Yoshimatsu, K; Niwa, M; Mashiko, H; Oshima, T; Ohtomo, A

    2015-01-01

    Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li(+) ions. PMID:26541508

  9. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction

    PubMed Central

    Yoshimatsu, K.; Niwa, M.; Mashiko, H.; Oshima, T.; Ohtomo, A.

    2015-01-01

    Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li+ ions. PMID:26541508

  10. Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction

    NASA Astrophysics Data System (ADS)

    Yoshimatsu, K.; Niwa, M.; Mashiko, H.; Oshima, T.; Ohtomo, A.

    2015-11-01

    Transition metal oxides display various electronic and magnetic phases such as high-temperature superconductivity. Controlling such exotic properties by applying an external field is one of the biggest continuous challenges in condensed matter physics. Here, we demonstrate clear superconductor-insulator transition of LiTi2O4 films induced by Li-ion electrochemical reaction. A compact electrochemical cell of pseudo-Li-ion battery structure is formed with a superconducting LiTi2O4 film as an anode. Li content in the film is controlled by applying a constant redox voltage. An insulating state is achieved by Li-ion intercalation to the superconducting film by applying reduction potential. In contrast, the superconducting state is reproduced by applying oxidation potential to the Li-ion intercalated film. Moreover, superconducting transition temperature is also recovered after a number of cycles of Li-ion electrochemical reactions. This complete reversible transition originates in difference in potentials required for deintercalation of initially contained and electrochemically intercalated Li+ ions.

  11. Li-ion diffusion in Li4Ti5O12 and LiTi2O4 battery materials detected by muon spin spectroscopy

    NASA Astrophysics Data System (ADS)

    Sugiyama, Jun; Nozaki, Hiroshi; Umegaki, Izumi; Mukai, Kazuhiko; Miwa, Kazutoshi; Shiraki, Susumu; Hitosugi, Taro; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Lord, James S.; Mânsson, Martin

    2015-07-01

    Lithium diffusion in spinel Li4Ti5O12 and LiTi2O4 compounds for future battery applications has been studied with muon spin relaxation (μ+SR ) . Measurements were performed on both thin-film and powder samples in the temperature range between 25 and 500 K. For Li4Ti5O12 and above about ˜200 K , the field distribution width (Δ ) is found to decrease gradually, while the field fluctuation rate (ν ) increases exponentially with temperature. For LiTi2O4 , on the contrary, the Δ (T ) curve shows a steplike decrease at ˜350 K , around which the ν (T ) curve exhibits a local maximum. These behaviors suggest that Li+ starts to diffuse above around 200 K for both spinels. Assuming a jump diffusion of Li+ at the tetrahedral 8 a site to the vacant octahedral 16 c site, diffusion coefficients of Li+ at 300 K in the film samples are estimated as (3.2 ±0.8 ) ×10-11 cm2/s for Li4Ti5O12 and (3.6 ±1.1 ) ×10-11 cm2/s for LiTi2O4 . Further, some small differences are found in both thermal activation energies and Li-ion diffusion coefficients between the powder and thin-film samples.

  12. Transformation of LiTi 2O 4from Spinel to Ramsdellite on Heating

    NASA Astrophysics Data System (ADS)

    Gover, Richard K. B.; Irvine, John T. S.; Finch, Adrian A.

    1997-09-01

    Time of flight powder neutron diffraction has been used to study the structural changes on heating LiTi 2O 4from 25 to 1000°C. A phase transition from the spinel to the ramsdellite form occurred between 875 and 925°C; the two structure types coexisted, apparently in equilibrium over much of this range. About 300°C below the transition, an anomalous change in the spinel structure was seen to occur. This anomaly was only observed in the parameters associated with Li and is thought to reflect migration of about 10% of the Li atoms from the 8 asite. Above 925°C, the ramsdellite form is stable and the structure was retained after rapid cooling. The structure of the high temperture ramsdellite form was refined by Rietveld analysis using the Pbnmspace group. The refinement gave final Rwpand Rpvalues of 2.91 and 3.74%, respectively.

  13. Preparation of LiTi 2O 4 single crystals with the spinel structure

    NASA Astrophysics Data System (ADS)

    Akimoto, J.; Gotoh, Y.; Kawaguchi, K.; Oosawa, Y.

    1992-02-01

    Single crystals of the spinel-type LiTi 2O 4 (Cubic, Fd3m, a=8.4095(12) Å) have been prepared by the reaction of lithium metal and TiO 2 at 1373 K in a sealed iron vessel. The structure refinement by a single crystal X-ray diffraction study confirmed a normal spinel cation distribution: the lithium cations are located at the tetrahedral 8 a sites, the titanium cations occupy the octahedral 16 d sites, and the oxygen parameter u=0.2622(4) with the final R=3.8%( R w=2.7%) for 60 independent observed reflections. The octahedral Ti-O distance is 2.005(3) Å, and the tetrahedral Li-O distance is 1.999(3) Å. The superconductivity for the crystals was observed by the magnetization measurements.

  14. Structural stabilities, surface morphologies and electronic properties of spinel LiTi2O4 as anode materials for lithium-ion battery: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Wang, Qi; Yu, Hai-Tao; Xie, Ying; Li, Ming-Xia; Yi, Ting-Feng; Guo, Chen-Feng; Song, Qing-Shan; Lou, Ming; Fan, Shan-Shan

    2016-07-01

    The thermodynamic stabilities, surface morphologies, and electronic structures of the LiTi2O4 compound were investigated by the first-principles methods. The formation enthalpies and lattice constants of LixTi2O4 decrease at first and then increase again. This phenomenon is related to the balance between Lisbnd O attractions and Lisbnd Li repulsions. Population analysis revealed that pure ionic and strong covalent bonds are formed respectively between lithium and oxygen and between titanium and oxygen in LiTi2O4 material. These interactions are very crucial for the thermodynamic stability of the compounds. The surface stability was considered as functions of the chemical potentials, and five terminations, (100)-Ti2O4, (110)-Ti2O4, (210)-Ti2O4, (111)-LiTiO4, and (310)-Ti2O8ones, are dominant in the stability diagram. Our calculation showed that a particle morphology with mono (110) facet can be obtained at Ti- and/or O-moderate conditions, and this morphology will be very helpful for improving the rate performance of the material via reduction of the lithium diffusion distance. Furthermore, partially filled electronic states at the Fermi energy were confirmed for bulk LiTi2O4 and some of the surfaces, and they are responsible for the excellent electronic conductivity of the material. Further calculations showed that the work functions are sensitive to the stoichiometry of the surfaces.

  15. Josephson effect in the unusual superconductors Lu 2Fe 3Si 5, LiTi 2O 4, and UBe 13

    NASA Astrophysics Data System (ADS)

    Wolf, E. L.; Noer, R. J.; Han, S.; Ng, K. W.; Chen, T. P.; Finnemore, D. K.; Tanner, L.

    1985-12-01

    A Josephson supercurrent, which can be split by microwave photons of frequency ν into Shapiro steps of spacing ΔV = hν/2 e, is expected between superconductors of like pairing type, either s- or p-wave. A weaker, and possibly unobservable effect, with step spacing Δ {V}/{2} was predicted by Pals and van Haeringen between electrodes of unlike pairing type. Experiments using K-band microwaves and a Nb point contact have been carried out at 1.2 K on the d-band superconductors LiTi 2O 4 and Lu 2Fe 3Si 5. In both cases we find unambiguous indication of s-wave pairing, as in Nb. The same experiment on the heavy-fermion superconductor UBe 13 in the range 0.7-7 K also reveals steps of spacing Δ V. This indicates that UBe 13 has been induced into a state of s-wave superconductivity by proximity with the s-wave superconductors Nb.

  16. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  17. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  18. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  19. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  20. Microstructural evolution of tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  1. Electrochromism in copper oxide thin films

    SciTech Connect

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  2. Galvanostatic Ion Detrapping Rejuvenates Oxide Thin Films.

    PubMed

    Arvizu, Miguel A; Wen, Rui-Tao; Primetzhofer, Daniel; Klemberg-Sapieha, Jolanta E; Martinu, Ludvik; Niklasson, Gunnar A; Granqvist, Claes G

    2015-12-01

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvanostatic treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li(+) trapping associated with the degradation of the EC properties and, importantly, that Li(+) detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li(+) detrapping. PMID:26599729

  3. Electrochromism: from oxide thin films to devices

    NASA Astrophysics Data System (ADS)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  4. Transparent Conductive Oxides in Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2014-11-01

    This paper show results from the development of transparent conductive oxides (TCO's) on large areas for the use as front electrode in thin film silicon solar modules. It is focused on two types of zinc oxide, which are cheap to produce and scalable to a substrate size up to 6 m2. Low pressure CVD with temperatures below 200°C can be used for the deposition of boron doped ZnO with a native surface texture for good light scattering, while sputtered aluminum doped ZnO needs a post deposition treatment in an acid bath for a rough surface. The paper presents optical and electrical characterization of large area samples, and also results about long term stability of the ZnO samples with respect to the so called TCO corrosion.

  5. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  6. rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

    NASA Astrophysics Data System (ADS)

    Hoey, Megan L.; Carlson, J. B.; Osgood, R. M.; Kimball, B.; Buchwald, W.

    2010-10-01

    Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.

  7. Pulsed Laser Deposition of Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Scarisoreanu, N. D.; Filipescu, M. (Morar); Epurescu, G. N.; Matei, D. G.; Verardi, P.; Craciun, F.; Dinescu, M.

    2004-10-01

    Pulsed Laser Deposition (PLD) emerged as an attractive technique for growth of thin films with different properties as metals, semiconductors, ferroelectrics, biocompatibles, polymers, etc., due to its important advantages: (i) the stoichiometric transfer of a complex composition from target to film and film crystallization at lower substrate temperature respect to other techniques (due to the high energy of species in the laser plasma); (ii) single step process, synthesis and deposition; (iii) creation in plasma of species impossible to be obtained by other processes; (iv) possibility of "in situ" heterostructure deposition using a multi-target system, etc. Simple or complex oxides are between the materials widely studied for their applications. PMN is the most known relaxor ferroelectric material: it exhibits a high dielectric constant value around the (diffuse) maximum phase transition temperature, of more than 35 000 in bulk form. Other oxides as lead zirconate titanate, Pb(ZrxTi1-x)O3 simple or La doped exhibit exceptional properties as large remanent polarization, high dielectric permittivity, high piezoelectric coefficient. SrBi2Ta2O9 (SBT) is characterized by a high "fatigue resistance" (constant remanent polarization until 1012 switching cycles), low imprint, and low leakage current. The physical properties of zirconium oxide (or zirconia) -- high strength, stability at high temperatures -- make it useful for applications involving gas sensors, corrosion or heat resistant mechanical parts, high refractive index optical coatings. Of particular interest is its use as an alternative gate dielectric in metal-oxide-semiconductor (MOS) devices or capacitor in dynamic random access memory (DRAM) chips. All these oxides have been deposited by laser ablation in oxygen reactive atmosphere and some of their properties will be presented in this paper.

  8. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  9. Unidirectional oxide hetero-interface thin-film diode

    NASA Astrophysics Data System (ADS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ˜105 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102 Hz < f < 106 Hz, providing a high feasibility for practical applications.

  10. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  11. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  12. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  13. NEXAFS Study of Air Oxidation for Mg Nanoparticle Thin Film

    NASA Astrophysics Data System (ADS)

    Ogawa, S.; Murakami, S.; Shirai, K.; Nakanishi, K.; Ohta, T.; Yagi, S.

    2013-03-01

    The air oxidation reaction of Mg nanoparticle thin film has been investigated by Mg K-edge NEXAFS technique. It is revealed that MgO is formed on the Mg nanoparticle surfaces at the early stage of the air oxidation for Mg nanoparticle thin film. The simulation of NEXAFS spectrum using standard spectra indicates the existence of complex magnesium carbonates (x(MgCO3).yMg(OH2).z(H2O)) in addition to MgO at the early stage of the air oxidation.

  14. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  15. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  16. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  17. Multifunctional oxide thin films for magnetoelectric and electromechanical applications

    NASA Astrophysics Data System (ADS)

    Baek, Seung Hyub

    Epitaxial multifunctional oxide thin films have been extensively researched to understand and exploit a variety of their physical properties. In order to integrate such versatile properties into real devices, there are several critical issues: (1) high-quality thin film growth, (2) fundamental understanding on reliable performance, and (3) device fabrication process preserving functionality of oxides. We have investigated all these issues, employing two different materials: multiferroic BiFeO3 and piezoelectric Pb(Mg1/3 Nb2/3)O3-PbTiO3 (PMN-PT) epitaxial thin films. For the high-quality thin film growth, we have chosen both BiFeO 3 and PMN-PT thin films as a model system. Bi2O3and PbO are the volatile species in these oxides, which makes it hard to grow phase-pure stoichiometric thin films. Because the properties of oxides are sensitive to stoichiometry and defects, it is highly required to fix such volatile elements during thin film growth. We have grown high-quality epitaxial thin films using a fast-rate off-axis sputtering method and vicinal substrates. In addition, we were able to control domain structures of BiFeO3 thin films using vicinal substrates. For the study on the reliability issues in oxides, we have used BiFeO 3 thin films within the framework of magnetoelectric device applications. For reliable magnetoelectric performance of BiFeO3, polarization switching path has to be (1) deterministic, and to be retained along with (2) time---retention, and (3) cycles--- fatigue. We have used monodomain BiFeO3 thin films as a model system. Based on theoretical predictions, we have studied polarization switching paths, and achieved both selective polarization switching and retention problems using island BiFeO3 structure. We have also investigated polarization fatigue, dependent on switching path. For the demonstration of working devices preserving the original functionality of oxides, we have fabricated micro-cantilevers using PMN-PT heterostructure on Si. The

  18. Review of solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Si Joon; Yoon, Seokhyun; Kim, Hyun Jae

    2014-02-01

    In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory.

  19. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  20. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  1. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  2. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  3. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-11-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  4. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    SciTech Connect

    Deng, Chunqing Otto, M.; Lupascu, A.

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  5. Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors.

    PubMed

    Rembert, Thomas; Battaglia, Corsin; Anders, André; Javey, Ali

    2015-10-28

    A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxide TFTs on virtually any substrate. PMID:26455916

  6. Characterization and stability of thin oxide films on plutonium surfaces

    NASA Astrophysics Data System (ADS)

    Flores, H. G. García; Roussel, P.; Moore, D. P.; Pugmire, D. L.

    2011-02-01

    X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to study oxide films on plutonium metal surfaces. Measurements of the relative concentrations of oxygen and plutonium, as well as the resulting oxidation states of the plutonium (Pu) species in the near-surface region are presented. The oxide product of the auto-reduction (AR) of plutonium dioxide films is evaluated and found to be an oxide species which is reduced further than what is expected. The results of this study show a much greater than anticipated extent of auto-reduction and challenge the commonly held notion of the stoichiometric stability of Pu 2O 3 thin-films. The data indicates that a sub-stoichiometric plutonium oxide (Pu 2O 3 - y ) exists at the metal-oxide interface. The level of sub-stoichiometry is shown to depend, in part, on the carbidic contamination of the metal surface.

  7. Low reflectance sputtered vanadium oxide thin films on silicon

    NASA Astrophysics Data System (ADS)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  8. Process Design for Preventing the Gate Oxide Thinning in the Integration of Dual Gate Oxide Transistor

    NASA Astrophysics Data System (ADS)

    Kim, Seong-Ho; Kim, Sung-Hoan; Kim, Sung-Eun; Kim, Myung-Soo; Park, Joo-Han; Kim, Eun-Soo; Kim, Jin-Tae

    2002-04-01

    In this study, a method is proposed to alleviate a gate oxide (GOX) thinning problem at the edge of shallow trench isolation (STI), when STI is adopted in the dual gate oxide process (DGOX). It is well known that the DGOX process is usually used for realizing both low and high voltage operating parts in one chip. However, it is found that severe GOX thinning occurs from 320 Å (in active area) to 79 Å (at STI top edge) and a dent profile exists at the top edge of STI, when conventional DGOX and STI processes are adopted. In order to solve these problems, a new DGOX process is used in this study. The GOX thinning is prevented mainly by a combination of a thick sidewall oxide with SiN pullback. Therefore, good subthreshold characteristics without a so-called double hump are obtained by the prevention of GOX thinning and a deep dent profile.

  9. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  10. Copper oxide thin films for ethanol sensing

    NASA Astrophysics Data System (ADS)

    Lamri Zeggar, M.; Bourfaa, F.; Adjimi, A.; Aida, M. S.; Attaf, N.

    2016-03-01

    The present is a study of a new active layer for ethanol (C2H5OH) vapour sensing devices based on copper oxide (CuO). CuO films were prepared by spray ultrasonic pyrolysis at a substrate temperature of 350 °C. Films microstructure was examined by X-ray diffraction and atomic force microscopy. Vapour-sensing testing was conducted using static vapour-sensing system, at different operating temperatures in the range of 100°C to 175°C for the vapour concentration of 300 ppm. The results show a high response of 45% at relatively low operating temperatures of 150°C towards ethanol vapour.

  11. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  12. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  13. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  14. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

  15. Growth control of the oxidation state in vanadium oxide thin films

    DOE PAGESBeta

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

  16. Growth control of the oxidation state in vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  17. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung; Park, Sungkyun; Egami, Takeshi

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  18. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

    SciTech Connect

    Lad, Robert J.

    1999-12-14

    This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with film microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.

  19. Single event gate rupture in thin gate oxides

    SciTech Connect

    Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.

    1997-06-01

    As integrated circuit densities increase with each new technology generation, both the lateral and vertical dimensions shrink. Operating voltages, however, have not scaled as aggressively as feature size, with a resultant increase in the electric fields within advanced geometry devices. Oxide electric fields are in fact increasing to greater than 5 MV/cm as feature size approaches 0.1 {micro}m. This trend raises the concern that single event gate rupture (SEGR) may limit the scaling of advanced integrated circuits (ICs) for space applications. The dependence of single event gate rupture (SEGR) critical field on oxide thickness is examined for thin gate oxides. Critical field for SEGR increases with decreasing oxide thickness, consistent with an increasing intrinsic breakdown field.

  20. Nanostructured zinc oxide thin film by simple vapor transport deposition

    NASA Astrophysics Data System (ADS)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  1. Investigation of tungsten doped tin oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jianwen; Meng, Ting; Yang, Zhao; Cui, Can; Zhang, Qun

    2015-11-01

    Tungsten doped tin oxide thin film transistors (TWO-TFTs) were fabricated by radio frequency magnetron sputtering. With TWO thin films as the channel layers, the TFTs show lower off-current and positive shift turn-on voltage than the intrinsic tin oxide TFTs, which can be explained by the reason that W doping is conducive to suppress the carrier concentration of the TWO channel layer. It is important to elect an appropriate channel thickness for improving the TFT performance. The optimum TFT performance in enhancement mode is achieved at W doping content of 2.7 at% and channel thickness of 12 nm, with the saturation mobility, turn-on voltage, subthreshold swing value and on-off current ratio of 5 cm2 V-1 s-1, 0.4 V, 0.4 V/decade and 2.4  ×  106, respectively.

  2. Vanadium oxide thin film with improved sheet resistance uniformity

    NASA Astrophysics Data System (ADS)

    Généreux, Francis; Provençal, Francis; Tremblay, Bruno; Boucher, Marc-André; Julien, Christian; Alain, Christine

    2014-06-01

    This paper reports on the deposition of vanadium oxide thin films with sheet resistance uniformity better than 2.5% over a 150 mm wafer. The resistance uniformity within the array is estimated to be less than 1%, which is comparable with the value reported for amorphous silicon-based microbolometer arrays. In addition, this paper also shows that the resistivity of vanadium oxide, like amorphous silicon, can be modeled by Arrhenius' equation. This result is expected to significantly ease the computation of the correction table required for TEC-less operation of VOx-based microbolometer arrays.

  3. Solid-state thin-film supercapacitor with ruthenium oxide and solid electrolyte thin films

    NASA Astrophysics Data System (ADS)

    Yoon, Y. S.; Cho, W. I.; Lim, J. H.; Choi, D. J.

    Direct current reactive sputtering deposition of ruthenium oxide thin films (bottom and top electrodes) at 400°C are performed to produce a solid-state thin-film supercapacitor (TFSC). The supercapacitor has a cell structure of RuO 2/Li 2.94PO 2.37N 0.75 (Lipon)/RuO 2/Pt. Radio frequency, reactive sputtering deposition of an Li 2.94PO 2.37N 0.75 electrolyte film is performed on the bottom RuO 2 film at room temperature to separate the bottom and top RuO 2 electrodes electrically. The stoichiometry of the RuO 2 thin film is investigated by Rutherford back-scattering spectrometry (RBS). X-ray diffraction (XRD) shows that the as-deposited RuO 2 thin film is an amorphous phase. Scanning electron microscopy (SEM) measurements reveal that the RuO 2/Lipon/RuO 2 hetero-interfaces have no inter-diffusion problems. Charge-discharge measurements with constant current at room temperature clearly reveal typical supercapacitor behaviour for a RuO 2/Lipon/RuO 2/Pt cell structure. Since the electrolyte thin film has low ionic mobility, the capacity and cycle performance are inferior to those of a bulk type of supercapacitor. These results indicate that a high performance, TFSC can be fabricated by a solid electrolyte thin film with high ionic conductivity.

  4. Electrical properties of vanadium tungsten oxide thin films

    SciTech Connect

    Nam, Sung-Pill; Noh, Hyun-Ji; Lee, Sung-Gap; Lee, Young-Hie

    2010-03-15

    The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO{sub 2}/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V{sub 1.85}W{sub 0.15}O{sub 5} thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V{sub 1.85}W{sub 0.15}O{sub 5} thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were 44, with a dielectric loss of 0.83%. The TCR values of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were about -3.45%/K.

  5. Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2014-09-01

    Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature ( T G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm2/V-s and 3.26 × 1020 cm-3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10-4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.

  6. Lateral solid-phase epitaxy of oxide thin films on glass substrate seeded with oxide nanosheets.

    PubMed

    Taira, Kenji; Hirose, Yasushi; Nakao, Shoichiro; Yamada, Naoomi; Kogure, Toshihiro; Shibata, Tatsuo; Sasaki, Takayoshi; Hasegawa, Tetsuya

    2014-06-24

    We developed a technique to fabricate oxide thin films with uniaxially controlled crystallographic orientation and lateral size of more than micrometers on amorphous substrates. This technique is lateral solid-phase epitaxy, where epitaxial crystallization of amorphous precursor is seeded with ultrathin oxide nanosheets sparsely (≈10% coverage) deposited on the substrate. Transparent conducting Nb-doped anatase TiO2 thin films were fabricated on glass substrates by this technique. Perfect (001) orientation and large grains with lateral sizes up to 10 μm were confirmed by X-ray diffraction, atomic force microscopy, and electron beam backscattering diffraction measurements. As a consequence of these features, the obtained film exhibited excellent electrical transport properties comparable to those of epitaxial thin films on single-crystalline substrates. This technique is a versatile method for fabricating high-quality oxide thin films other than anatase TiO2 and would increase the possible applications of oxide-based thin film devices. PMID:24867286

  7. Changes in the Young Modulus of hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Vargas, André Luís Marin; de Araújo Ribeiro, Fabiana; Hübler, Roberto

    2015-12-01

    Hafnium-oxide (HfO2)-based materials have been extensively researched due to their excellent optical and electrical properties. However, the literature data on the mechanical properties of these materials and its preparation for heavy machinery application is very limited. The aim of this work is to deposit hafnium oxide thin films by DC reactive magnetron sputtering with different Young's Modulus from the Ar/O2 concentration variation in the deposition chamber. The thin films were deposited by DC reactive magnetron sputtering with different Ar/O2 gas concentrations in plasma. After deposition, HfOx thin films were characterized through XRD, AFM, RBS and XRF. In this regard, it was observed that the as-deposited HfO2 films were mostly amorphous in the lower Ar/O2 gas ratio and transformed to polycrystalline with monoclinic structure as the Ar/O2 gas ratios grows. RBS technique shows good compromise between the experimental data and the simulated ones. It was possible to tailored the Young Modulus of the films by alter the Ar/O2 content on the deposition chamber without thermal treatment.

  8. Preparation and Evaluation of Nitrogen Doped Tungsten Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Nakagawa, Koichi; Miura, Noboru; Matsumoto, Setsuko; Nakano, Ryotaro; Matsumoto, Hironaga

    Nitrogen doped tungsten oxide thin films were prepared by RF reactive sputtering in a gas mixture of argon, oxygen and nitrogen at room temperature. As a result of X-ray photoelectron spectroscopy, it was thought that the doped nitrogen in the films is bonding to tungsten of WO3 bonding states as anion and exits in substitution sites in WO3. The optical absorption edge was shifted to lower energy region with nitrogen doping. The nitrogen doped thin films exhibit a coloration to black from transparent yellow by electrochromism. Additionally, a new peak at 2.3 eV related to nitrogen doping is observed in the spectra of color center at bleaching process.

  9. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  10. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Rodenbücher, C.; Hildebrandt, E.; Szot, K.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Breuer, U.; Waser, R.; Alff, L.

    2016-06-01

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2-x) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  11. Ultra-thin solid oxide fuel cells: Materials and devices

    NASA Astrophysics Data System (ADS)

    Kerman, Kian

    Solid oxide fuel cells are electrochemical energy conversion devices utilizing solid electrolytes transporting O2- that typically operate in the 800 -- 1000 °C temperature range due to the large activation barrier for ionic transport. Reducing electrolyte thickness or increasing ionic conductivity can enable lower temperature operation for both stationary and portable applications. This thesis is focused on the fabrication of free standing ultrathin (<100 nm) oxide membranes of prototypical O 2- conducting electrolytes, namely Y2O3-doped ZrO2 and Gd2O3-doped CeO2. Fabrication of such membranes requires an understanding of thin plate mechanics coupled with controllable thin film deposition processes. Integration of free standing membranes into proof-of-concept fuel cell devices necessitates ideal electrode assemblies as well as creative processing schemes to experimentally test devices in a high temperature dual environment chamber. We present a simple elastic model to determine stable buckling configurations for free standing oxide membranes. This guides the experimental methodology for Y 2O3-doped ZrO2 film processing, which enables tunable internal stress in the films. Using these criteria, we fabricate robust Y2O3-doped ZrO2 membranes on Si and composite polymeric substrates by semiconductor and micro-machining processes, respectively. Fuel cell devices integrating these membranes with metallic electrodes are demonstrated to operate in the 300 -- 500 °C range, exhibiting record performance at such temperatures. A model combining physical transport of electronic carriers in an insulating film and electrochemical aspects of transport is developed to determine the limits of performance enhancement expected via electrolyte thickness reduction. Free standing oxide heterostructures, i.e. electrolyte membrane and oxide electrodes, are demonstrated. Lastly, using Y2O3-doped ZrO2 and Gd2O 3-doped CeO2, novel electrolyte fabrication schemes are explored to develop oxide

  12. Solution-Processed Indium Oxide Based Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Xu, Wangying

    Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs. At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics. Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property. Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage. Finally, we proposed a green route for

  13. Enhanced electrochromism in cerium doped molybdenum oxide thin films

    SciTech Connect

    Dhanasankar, M.; Purushothaman, K.K.; Muralidharan, G.

    2010-12-15

    Cerium (5-15% by weight) doped molybdenum oxide thin films have been prepared on FTO coated glass substrate at 250 {sup o}C using sol-gel dip coating method. The structural and morphological changes were observed with the help of XRD, SEM and EDS analysis. The amorphous structure of the Ce doped samples, favours easy intercalation and deintercalation processes. Mo oxide films with 10 wt.% of Ce exhibit maximum anodic diffusion coefficient of 24.99 x 10{sup -11} cm{sup 2}/s and the change in optical transmittance of ({Delta}T at 550 nm) of 79.28% between coloured and bleached state with the optical density of ({Delta}OD) 1.15.

  14. Combinatorial study of zinc tin oxide thin-film transistors

    SciTech Connect

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-07

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO:SnO{sub 2} ratio of the film varies as a function of position on the sample, from pure ZnO to SnO{sub 2}, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2 to 12 cm{sup 2}/V s, with two peaks in mobility in devices at ZnO fractions of 0.80{+-}0.03 and 0.25{+-}0.05, and on/off ratios as high as 10{sup 7}. Transistors composed predominantly of SnO{sub 2} were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  15. Nanoscale reduction of graphene oxide thin films and its characterization

    NASA Astrophysics Data System (ADS)

    Lorenzoni, M.; Giugni, A.; Di Fabrizio, E.; Pérez-Murano, Francesc; Mescola, A.; Torre, B.

    2015-07-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  16. Electrochromism Properties of Palladium Doped Tungsten-Oxide Thin Films Prepared with RF Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Yabumoto, Taihei; Iwai, Yuki; Miura, Noboru; Matsumoto, Setsuko; Nakano, Ryotaro; Matsumoto, Hironaga

    Palladium doped tungsten oxide thin films were prepared by RF reactive sputtering in a mixture of argon and oxygen at room temperature. XRD patterns indicated that these films were amorphous. SEM imaging indicated a smaller grain size of palladium doped thin film compared with that of undoped tungsten oxide thin film. With electrochromism, palladium doped tungsten oxide exhibited a reverse optical modulation with respect to the applied potential.

  17. Synthesis and Oxidation Resistance of h-BN Thin Films

    NASA Astrophysics Data System (ADS)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  18. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    PubMed

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster. PMID:26735305

  19. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films.

    PubMed

    Figueroa, A I; van der Laan, G; Harrison, S E; Cibin, G; Hesjedal, T

    2016-01-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi(3+) in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771

  20. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films

    PubMed Central

    Figueroa, A. I.; van der Laan, G.; Harrison, S. E.; Cibin, G.; Hesjedal, T.

    2016-01-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi3+ in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771

  1. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films

    NASA Astrophysics Data System (ADS)

    Figueroa, A. I.; van der Laan, G.; Harrison, S. E.; Cibin, G.; Hesjedal, T.

    2016-03-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi3+ in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state.

  2. Electrical and Optical Properties of Copper Oxide Thin Films by Sol-Gel Technique

    NASA Astrophysics Data System (ADS)

    Hashim, H.; Shariffudin, S. S.; Saad, P. S. M.; Ridah, H. A. M.

    2015-11-01

    Copper oxide were prepared by sol-gel technique and deposited onto quartz substrates as thin films using spin coating method. The aim of this research was to study the effects of different spin coating speeds of copper oxide thin films on the electrical and optical properties of the thin films. Five samples of copper oxide thin films with different spin coating speeds of 1000, 1500, 2000, 2500 and 3000 rpm were annealed at 600°C for 30 minutes. UV-Vis spectrophotometer and two-point probe technique were used to characterize the optical and electrical properties of the deposited films. Based on the results obtained, it revealed that the electrical conductivity of the copper oxide thin films reduce as the spin coating speeds increase. The calculated optical band gap and the resistivity of the copper oxide thin films also decrease when the spin coating speeds are increased.

  3. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    SciTech Connect

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  4. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  5. Properties of mixed molybdenum oxide iridium oxide thin films synthesized by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Kawar, R. K.; Sadale, S. B.; Inamdar, A. I.; Deshmukh, H. P.

    2006-09-01

    Molybdenum-doped iridium oxide thin films have been deposited onto corning glass- and fluorine-doped tin oxide coated corning glass substrates at 350 °C by using a pneumatic spray pyrolysis technique. An aqueous solution of 0.01 M ammonium molybdate was mixed with 0.01 M iridium trichloride solution in different volume proportions and the resultant solution was used as a precursor solution for spraying. The as-deposited samples were annealed at 600 °C in air medium for 1 h. The structural, electrical and optical properties of as-deposited and annealed Mo-doped iridium oxide were studied and values of room temperature electrical resistivity, and thermoelectric power were estimated. The as-deposited samples with 2% Mo doping exhibit more pronounced electrochromism than other samples, including pristine Ir oxide.

  6. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    SciTech Connect

    Gao, Xu E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  7. Lithium cobalt oxide thin film and its electrochromism

    NASA Astrophysics Data System (ADS)

    Wei, Guang; Haas, Terry E.; Goldner, Ronald B.

    1989-06-01

    Thin films of lithium cobalt oxide have been prepared by RF-sputtering from powdered LiCoO2. These films permit reversible electrolytic removal of lithium ions upon application of an anodic voltage in a propylene carbonate-lithium perchlorate electrolyte, the films changing in color from a pale amber transparent state to a dark brown. A polycrystalline columnar film structure was revealed with SEM and TEM. X ray examination of the films suggests that the layered rhombohedral LiCoO2 structure is the major crystalline phase present. Oxidation-reduction titration and atomic absorption were used for the determination of the film stoichiometry. The results show that the as deposited-films on glass slides are lithium deficient (relative to the starting material) and show a high average cobalt oxidation state near +3.5. The measurements of dc conductivity suggest a band to band conduction at high temperature (300 to 430 K) and hopping conduction in localized states at low temperature (4 to 270 K). The thermoelectric power data show that the films behave as p-type semiconductors. Transmission and reflectance measurements from 400 nm to 2500 nm show significant near-IR reflectivity.

  8. Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

    NASA Astrophysics Data System (ADS)

    Palimar, Sowmya; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-12-01

    The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 Ω-1 cm-1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 Ω-1 cm-1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 Ω-1 cm-1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping.

  9. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  10. Studies on nickel-tungsten oxide thin films

    SciTech Connect

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  11. Studies on nickel-tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-01

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm-1 and 1100 cm-1 correspond to Ni-O vibration and the peak at 860 cm-1 can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  12. Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

    NASA Astrophysics Data System (ADS)

    Sim, Jai Sung

    Self-supported freestanding membranes are films that are devoid of any underlying supporting layers. The key advantage of such structures is that, due to the lack of substrate effects - both mechanical and chemical, the true native properties of the material can be probed. This is crucial since many of the studies done on materials that are used as freestanding membranes are done as films clamped to substrates or in the bulk form. This thesis focuses on the synthesis and fabrication as well as electrical studies of free standing ultrathin < 40nm oxide membranes. It also is one of the first demonstrations for electrically probing nanoscale freestanding oxide membranes. Fabrication of such membranes is non-trivial as oxide materials are often brittle and difficult to handle. Therefore, it requires an understanding of thin plate mechanics coupled with controllable thin film deposition process. Taking things a step further, to electrically probe these membranes required design of complex device architecture and extensive optimization of nano-fabrication processes. The challenges and optimized fabrication method of such membranes are demonstrated. Three materials are probed in this study, VO2, TiO2, and CeO2. VO2 for understanding structural considerations for electronic phase change and nature of ionic liquid gating, TiO2 and CeO2 for understanding surface conduction properties and surface chemistry. The VO2 study shows shift in metal-insulator transition (MIT) temperature arising from stress relaxation and opening of the hysteresis. The ionic liquid gating studies showed reversible modulation of channel resistance and allowed distinguishing bulk process from the surface effects. Comparing the ionic liquid gating experiments to hydrogen doping experiments illustrated that ionic liquid gating can be a surface limited electrostatic effect, if the critical voltage threshold is not exceeded. TiO2 study shows creation of non-stoichiometric forms under ion milling. Utilizing

  13. Wettability of oxide thin films prepared by pulsed laser deposition: New insights

    NASA Astrophysics Data System (ADS)

    Prakash, Saurav

    The objective of the thesis is to investigate the wettability of good quality oxide thin films prepared by pulsed laser deposition (PLD). In this work, many shortfalls in the water contact angle measurement of thin films of oxides, responsible for the wide scatter in the values reported in literature, have been addressed. (Abstract shortened by UMI.).

  14. Investigation of optical loss mechanisms in oxide thin films

    SciTech Connect

    Chow, A.F.; Kingon, A.I.; Auciello, O.; Poker, D.B.

    1995-05-01

    KNbO{sub 3}, K(Ta,Nb)O{sub 3}, KTaO{sub 3}, and Ta{sub 2}O{sub 5} thin films have been grown by ion-beam sputter deposition. KNbO{sub 3} has excellent nonlinear properties for second harmonic generation; however, high optical losses are still characteristic of these films. Several loss mechanisms, such as, high angle grain boundaries, twin domains, interface and surface scattering, and oxygen vacancies can all contribute to the high losses. In order to isolate the various mechanisms, amorphous Ta{sub 2}O{sub 5} films, epitaxial cubic KTaO{sub 3} and tetragonal K(Ta,Nb)O{sub 3} films were grown on MgO and Al{sub 2}O{sub 3} substrates subjected to post-deposition annealing treatments and various oxygen pressure conditions. The optical losses and refractive indices were observed to differ depending on the substrate surface and annealing treatments. Resonant scattering experiments were performed to analyze the oxygen composition. The optical properties of these oxide thin film systems are reported and the breakdown of the loss mechanisms is addressed.

  15. New fabrication of zinc oxide nanostructure thin film gas sensors

    NASA Astrophysics Data System (ADS)

    Hendi, A. A.; Alorainy, R. H.

    2014-02-01

    The copper doped zinc oxide thin films have been prepared by sol-gel spin coating method. The structural and morphology properties of the Cu doped films were characterized by X-ray diffraction and atomic force microscope. XRD studies confirm the chemical structure of the ZnO films. The optical spectra method were used to determined optical constants and dispersion energy parameters of Cu doped Zno thin films. The optical band gap of undoped ZnO was found to be 3.16 eV. The Eg values of the films were changed with Cu doping. The refractive index dispersion of Cu doped ZnO films obeys the single oscillator model. The dispersion energy and oscillator energy values of the ZnO films were changed with Cu doping. The Cu doped ZnO nanofiber-based NH3 gas sensors were fabricated. The sensor response of the sensors was from 464.98 to 484.61 when the concentration of NH3 is changed 6600-13,300 ppm. The obtained results indicate that the response of the ZnO film based ammonia gas sensors can be controlled by copper content.

  16. Highly conductive grain boundaries in copper oxide thin films

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Klein, Andreas; Fortunato, Elvira

    2016-06-01

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  17. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    SciTech Connect

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  18. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  19. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    NASA Astrophysics Data System (ADS)

    El-Atab, Nazek; Rizk, Ayman; Okyay, Ali K.; Nayfeh, Ammar

    2013-11-01

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  20. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  1. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  2. Formation of carriers in Ti-oxide thin films by substitution reactions

    SciTech Connect

    Liu, Y. S.; Lin, Y. H.; Wei, Y. S.; Liu, C. Y.

    2012-02-15

    Conductive Ti-oxide thin films are produced using a reactive sputtering and post-annealing process. The lowest resistivity of Ti-oxide thin films (2.30 x 10{sup -2}{Omega}-cm) can be achieved after annealing for 1 h at 400 deg. C in ambient O{sub 2}. Additionally, the Hall measurement results indicate that the carrier concentration increases during the initial 1-h annealing process before decreasing during subsequent annealing. By curve fitting the O{sub ls} core-level peaks in the x ray photoelectron spectroscopy (XPS) spectrum of the annealed Ti-oxide thin films, we found that the oxygen (O) vacancy concentration monotonically increases with annealing time, which differs from the behavior of the carrier concentration regarding annealing time. This means that the O-vacancy mechanism alone cannot explain the formation of carriers in Ti-oxide thin films. By curve-fitting core-level Ti peaks in the XPS spectrum of annealed Ti-oxide thin films, a Ti{sup 3+}-to-Ti{sup 4+} substitution reaction in the TiO{sub 2} phase of the Ti-oxide thin film after annealing plays the dominant role in the formation of conduction carriers. Instead of the O-vacancy mechanism, the Ti{sup 3+}-to-Ti{sup 4+} substitution mechanism can explain the concentration of carriers in Ti-oxide thin films following annealing.

  3. Nontraditional Amorphous Oxide Semiconductor Thin-Film Transistor Fabrication

    NASA Astrophysics Data System (ADS)

    Sundholm, Eric Steven

    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer in an AOS bottom-gate TFT is accomplished by (i) choosing a passivation layer in which the charge neutrality level is aligned with (ideal case) or higher in energy than that of the semiconductor channel layer charge neutrality level, and (ii) depositing the passivation layer in such a manner that a negligible density of oxygen vacancies are present at the channel-passivation layer interface. Two AOS TFT passivation schemes are explored. Sputter-deposited zinc tin silicon oxide (ZTSO) appears promising for suppressing the effects of negative bias illumination stress (NBIS) with respect to ZTO and IGZO TFTs. Solution-deposited silicon dioxide is used as a barrier layer to subsequent PECVD silicon dioxide deposition, yielding ZTO TFT transfer curves showing that the dual-layer passivation process does not significantly alter ZTO TFT electrical characteristics. The second focus involves creating an adaptable back-end process compatible with flexible substrates. A detailed list of possible via formation techniques is presented with particular focus on non-traditional and adaptable techniques. Two of the discussed methods, “hydrophobic surface treatment”and “printed local insulator,” are demonstrated and proven effective. The third focus is printing AOS TFT channel layers in order to create an adaptable and additive front-end integrated circuit fabrication scheme. Printed zinc indium aluminum oxide (ZIAO) and indium gallium zinc oxide (IGZO) channel layers are demonstrated using a SonoPlot piezoelectric printing system. Finally, challenges associated with printing electronic

  4. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  5. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    PubMed Central

    Durrani, Sardar M. A.; Al-Kuhaili, Mohammad F.; Bakhtiari, Imran A.; Haider, Muhammad B.

    2012-01-01

    Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively. PMID:22736967

  6. Defect Mediated Ferromagnetism in Zinc Oxide Thin Film Heterostructures

    NASA Astrophysics Data System (ADS)

    Mal, Siddhartha

    Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. Since zinc oxide (ZnO) posits a promising player, it is important to elucidate the critical issues regarding the origin and nature of magnetism in ZnO thin film heterostructures. Another critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial thin films on the existing technology based on Si (100) substrates, which requires appropriate substrate templates. The present research work is focused on the study of room temperature ferromagnetism (RTFM) caused by intrinsic defects and precise control of RTFM using thermal treatments and laser and ion irradiation. We performed a systematic study of the structural, chemical, electrical, optical and magnetic properties of undoped ZnO films grown under different conditions as well as the films that were annealed in various environments. Oxygen annealed films displayed a sequential transition from ferromagnetism to diamagnetism as a function of the annealing temperature. An increase in the green band intensity has been observed in oxygen annealed ZnO films. Reversible switching of room-temperature ferromagnetism and n-type conductivity have been demonstrated by oxygen and vacuum annealing. Detailed electron energy loss spectroscopy and secondary ion mass spectroscopy studies have been presented to rule out the possibility of external source of magnetism. Electron-Paramagnetic Resonance (EPR) measurements indicate the presence of a broad peak at g=2.01. This would be most consistent with the magnetic moment arising from the oxygen vacancies (g=1.996), although the possible contribution from Zn vacancies (g=2.013) cannot be entirely ruled out. The magnetic moment in these films may arise from the

  7. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  8. Anisotropy and micromagnetics in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Wynn, Thomas Andrew

    Complex oxide perovskites are a class of material with a remarkably wide range of functional properties including magnetism, superconductivity, metal-to-insulator transitions, colossal magnetoresistance, and in some cases high magnetocrystalline anisotropy. Reduction in length scales through thin film deposition and nanopatterning results in altered properties from their bulk constituents. In this work, thin films of La0.7Sr0.3CoO3 (LSCO) and LSCO/La 0.7Sr0.3MnO3 (LSMO) bilayers of varying thicknesses were deposited onto (LaAlO3)0.3(Sr2TaAlO 6)0.7 (LSAT) substrates, and their anisotropic magnetic properties were measured along the in- plane [100] and [110] directions using superconducting quantum interference device (SQUID) magnetometry and soft x-ray magnetic spectroscopy. The LSCO showed thickness dependent magnetism, and films were non-magnetic below a critical thickness of 4 nm. Magnetic LSCO films showed unique anisotropic effects on the saturation magnetization (Ms), with a lower M s in the [110] direction than the [100] direction. This potentially indicates the existence of a hard component in the [110] direction that is not being switched at fields in the SQUID magnetometer (7 T). Normalized hysteresis loops indicate the LSCO films display little magnetocrystalline anisotropy within the plane of the film. LSCO/LSMO bilayers with a fixed LSMO layer of 6 nm in thickness showed cobalt magnetism at thicknesses where single layers were non-magnetic, suggesting that the substrate/film interface is not the cause of the non-magnetic layer in the LSCO thin films. Magnetic coupling occurs in bilayers with LSCO layer thicknesses of below 4 nm, and both LSCO and LSMO layers showed a [110] easy axis. When the layer thickness of LSCO was increased above 8 nm, the LSCO layer developed a soft component at the LSCO/LSMO interface. This soft LSCO component remained coupled with the LSMO, though the easy axis changed to the [100] direction, and the harder, non-interface LSCO

  9. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  10. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    NASA Astrophysics Data System (ADS)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  11. Precursor ion damage and single event gate rupture in thin oxides

    SciTech Connect

    Sexton, F.W.; Fleetwood, D.M.; Shaneyfelt, M.R.; Dodd, P.E.; Hash, G.L.; Schanwald, L.P.; Krisch, K.S.

    1998-02-01

    Gate oxide electric fields are expected to increase to greater than 5 MV/cm as feature size approaches 0.1 micrometers in advanced integrated circuit (IC) technologies. Work by Johnston, et al. raised the concern that single event gate rupture (SEGR) may limit the scaling of advanced ICs for space applications. SEGR has also been observed in field programmable gate arrays, which rely on thin dielectrics for electrical programming at very high electric fields. The focus of this effort is to further explore the mechanisms for SEGR in thin gate oxides. The authors examine the characteristics of heavy ion induced breakdown and compare them to ion induced damage in thin gate oxides. Further, the authors study the impact of precursor damage in oxides on SEGR threshold. Finally, they compare thermal and nitrided oxides to see if SEGR is improved by incorporating nitrogen in the oxide.

  12. Surface and sub-surface thermal oxidation of thin ruthenium films

    SciTech Connect

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.; Kokke, S.; Zoethout, E.

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  13. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    SciTech Connect

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides.

  14. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  15. Transparent conductive reduced graphene oxide thin films produced by spray coating

    NASA Astrophysics Data System (ADS)

    Shi, HongFei; Wang, Can; Sun, ZhiPei; Zhou, YueLiang; Jin, KuiJuan; Yang, GuoZhen

    2015-01-01

    Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide. The dispersion was produced by chemical reduction of graphene oxide, and the film thickness was controlled with the amount of spray volume. AFM measurements revealed that the thin films have near-atomically flat surface. The chemical and structural parameters of the samples were analyzed by Raman and XPS studies. It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region. The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 kΩ with a light transmittance of 68.69% at 550 nm. The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.

  16. Direct growth of oxide nanowires on CuOx thin film.

    PubMed

    Kim, Hwansoo; Lee, Byung Kook; An, Ki-Seok; Ju, Sanghyun

    2012-02-01

    Oxide nanowires were directly grown on a CuO(x) thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metal-catalyst-free growth on the CuO(x) thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO(2) and ZnO nanowires were grown as single-crystalline structures just above the CuO(x) thin film. Bottom-gate structural SnO(2) and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6 cm(2) V(-1) s(-1), respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuO(x) thin film. PMID:22214566

  17. Mass Enhancement of Two-Dimensional Electrons in Thin Oxide Si-MOSFETs

    SciTech Connect

    Draper, B.L.; Pan, W.; Tsui, D.C.

    1998-11-02

    We report in this paper a study of the effective mass in thin oxide Si-MOSFETs, using the temperature dependence of the Shubnikov-de Haas (SdH) effect and following the methodology developed by Smith and Stiles.

  18. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  19. Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

    NASA Astrophysics Data System (ADS)

    Xu, X. L.; Kuehn, R. T.; Wortman, J. J.; Öztürk, M. C.

    1992-06-01

    Thin (80-200 Å) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time. A deposition rate of 55 Å/min has been achieved at 800 °C with a SiH4/N2O flow rate ratio of 2%. Auger electron spectroscopy (AES) and Rutherford back scattering spectroscopy (RBS) have shown a uniform and stoichiometric composition throughout the deposited oxide films. Electrical characterization of the films have shown an average catastrophic breakdown field of 13 MV/cm and a midgap interface trap density (Dit) of equal to or less than 5×1010 eV-1 cm-2. The results suggest that the deposited RTCVD SiO2 films using SiH4-N2O gas system may have the potential to be used as the gate dielectric in future low-temperature metal oxide semiconductor (MOS) device processes for ultralarge scale integration (ULSI).

  20. Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides

    NASA Astrophysics Data System (ADS)

    Chen, Ming-Jer; Kang, Ting-Kuo; Liu, Chuan-Hsi; Chang, Yih J.; Fu, Kuan-Yu

    2000-07-01

    An existing cell-based percolation model with parameter correlation can find its potential applications in assessing soft-breakdown (BD) statistics as long as the oxide thinning due to the localized physical damage near the SiO2/Si interface is accounted for. The resulting model is expressed explicitly with the critical trap number per cell nBD and the remaining oxide thickness tox' both as parameters. Reproduction of time-to-bimodal (soft- and hard-) breakdown statistical data from 3.3-nm-thick gate-oxide samples yields nBD of 3 and 4 for soft and hard breakdown, respectively. The extracted tox' of 1.0 nm for soft breakdown, plus the transition layer thickness of 0.5 nm in the model, is fairly comparable with literature values from current-voltage fitting. The dimension and area of the localized physically damaged region or percolation path (cell) are quantified as well. Based on the work, the origins of soft and hard breakdown are clarified in the following: (i) soft breakdown behaves intrinsically as hard breakdown, that is, they share the same defect (neutral trap) generation process and follow Poisson random statistics; (ii) both are independent events corresponding to different tox' requirements; and (iii) hard breakdown takes place in a certain path located differently from that for the first soft breakdown.

  1. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-04-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  2. Physical properties in thin films of iron oxides.

    SciTech Connect

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1

  3. Copper Oxide Substrates and Epitaxial Copper Oxide/Zinc Oxide Thin Film Heterostructures for Solar Energy Conversion

    NASA Astrophysics Data System (ADS)

    Darvish, Davis Solomon

    Future fossil fuel scarcity and environmental degradation have demonstrated the need for renewable, low-carbon sources of energy to power an increasingly industrialized world. Solar energy with its infinite supply makes it an extraordinary resource that should not go unused. However with current materials, adoption is limited by cost and so a paradigm shift must occur to get everyone on the same page embracing solar technology. Cuprous Oxide (Cu2O) is a promising earth abundant material that can be a great alternative to traditional thin-film photovoltaic materials like CIGS, CdTe, etc. We have prepared Cu 2O bulk substrates by the thermal oxidation of copper foils as well Cu2O thin films deposited via plasma-assisted Molecular Beam Epitaxy. From preliminary Hall measurements it was determined that Cu2O would need to be doped extrinsically. This was further confirmed by simulations of ZnO/Cu2O heterojunctions. A cyclic interdependence between, defect concentration, minority carrier lifetime, film thickness, and carrier concentration manifests itself a primary reason for why efficiencies greater than 4% has yet to be realized. Our growth methodology for our thin-film heterostructures allow precise control of the number of defects that incorporate into our film during both equilibrium and nonequilibrium growth. We also report process flow/device design/fabrication techniques in order to create a device. A typical device without any optimizations exhibited open-circuit voltages Voc, values in excess 500mV; nearly 18% greater than previous solid state devices.

  4. Thin Films and Josephson Junctions of Yttrium Barium Copper Oxide

    NASA Astrophysics Data System (ADS)

    Rosenthal, Peter Andrew

    We have studied the growth of superconducting films of rm Y_1Ba_2Cu_3O _{7-delta} using reactive electron beam coevaporation. Emphasis was placed on determining the most important growth parameters, and optimizing the instrumentation for controlling the growth environment. We have experimented with atomic absorption based deposition rate control, quartz lamp based substrate heating, and various forms of activated oxygen. Methods for generating and delivering molecular oxygen, oxygen ion beams, ozone and atomic oxygen were investigated and their effects on film quality were characterized. We found that the specific method of oxidation was not critical to the film quality but that optimal films were produced at lower pressures (~10^{-4} T) for more chemically reactive allotropes of oxygen. Composition was found to be quite important in determining the film properties. These results are discussed in the context of growth kinetics and equilibrium thermodynamics. We have studied the transport properties of artificial grain boundary Josephson junctions of rm Y_1Ba_2Cu_3O_{7-delta }. Measurements and modeling of the magnetic interference patterns of the critical currents revealed the presence of extensive disorder within the junctions. The temperature dependence of the critical currents revealed behavior consistent with the resistively shunted junction (RSJ) model. Modeling the inhomogeneous junctions as parallel arrays of RSJ-like junctions explained the clean RSJ-like current-voltage characteristics even in junctions showing extremely complicated magnetic interference patterns. The observed modulation period of the single junction interference patterns showed an unusual w^{-2} width dependence that could be quantitatively explained by a model of flux focusing based on the London theory. A model of the diffraction patterns for junctions fabricated from extremely thin films shows unexpected deviations from the usual behavior. These peculiarities are understood in terms of

  5. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  6. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  7. Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

    SciTech Connect

    Savara, Aditya

    2014-03-15

    Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ∼15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup −7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

  8. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  9. High temperature nitrogen oxides sensing enabled by indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Kannan, Srinivasan

    Generation of power using fossil fuel combustion invariably results in formation of undesirable gas species (NOx, SOx, CO, CO2, etc.) at high-temperatures which are harmful to the environment. Thus, there is a continual need to develop sensitive, responsive, stable, selective, robust and low-cost sensor systems and sensor materials for combustion monitoring. This work investigates the viability of microfabricated NO x sensors based on sputtered indium oxide (In2O3) utilizing microhotplate structures. The material becomes resistive when exposed to oxidizing gases like NOx, with its conductivity dependent upon the temperature, partial pressure of the test gas and morphological structure. We believe this device would help increase efficiency and decrease emissions through improved combustion process control, leading to a comparably economic and responsive sensor. In this work, more than 600 sensors were fabricated and tested, including RF and pulsed-DC sputtered films. About 50 unique sensor conditions were characterized and related to the gas sensor response. The sensor conditions included deposition parameters (power, pressure, time, etc.) and postdeposition processes (anneals, promoter layers, etc.). In2O3 thin films were RF sputter deposited on microhotplate structures with different thickness (40 to 300 nm) in pure Ar. Additionally, a combination of reactive and RF sputtering of In2O3 material was-deposited in Ar and O2 (10% and 25%) mixture. In2O3 films without promoter layers and with gold or TiOx promoter layers (~ 3 nm) were investigated for NOx sensing. Selectivity, stability and repeatability of indium oxide (In2O3) thin film sensor to detect NOx (25 ppm) in presence of other exhaust gas pollutants including H2, NH3 and CO2 at high operating temperatures (greater than 350 °C) was investigated in N2 carrier gas. In2O 3 films (150nm thick) deposited in Ar and O2 (25% O 2) presented the highest response (S ~ 50) to 25 ppm NOx at 500 °C when compared to films

  10. Carboxylate Precursor Effects on MOD Derived Metal Oxide (Nickel/Nickel Oxide ) Thin Films

    NASA Astrophysics Data System (ADS)

    Gao, Xiang

    Thin films in the (Ni/NiO) system have been widely studied because of their significant potential for use in batteries, fuel cells, solar cells, supercapacitors, magnetic devices and various sensor applications. Such films typically are deposited onto suitable substrates by electrochemical or vapor deposition methods, followed by heat treatment to develop the oxide structure. In this study, by contrast, the Ni/NiO thin films were prepared by metallo-organic decomposition (MOD) technique in order to facilitate the development of nano structure feature as well as molecular scale mixing and excellent composition control. Critical parameters that must be controlled during this deposition process to achieve high quality films include: carboxylate precursor chemistry, solution chemistry, film structure chemistry, film deposition characteristics, film structure development and pyrolysis characteristics. These crucial control parameters are, for the most areas, poorly understood for this system especially for the carboxylate precursor chemistry effects on properties of Ni/NiO thin films. The goal of this work, therefore, is to understand and design those parameters in term of precursor species, viscosity, solute concentration and solvent composition as well as film deposition and heat treatment conditions that can lead to the controlled fabrication of nano-sized, high surface area, low resistive Ni/NiO thin films on Si and metallic substrates such as stainless steels and silver. The solvent system used consisted of a unique mixture of propionic acid and amylamine, in molar ratio of 0.5--2.0, with Ni acetate as the solute precursor in the concentration range of 0.2--2 mol/l. The films were prepared by spin deposition at 3000 rpm from carboxylate solution precursors with viscosity range of 10--640 cP. Good quality nano-sized Ni/NiO thin films, in the range of 0.2--2 microm thickness, on Si or stainless steel substrates were obtained by a mixed AA/PPA solvent system in the

  11. Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

    PubMed Central

    Lee, Sangik; Hwang, Inrok; Oh, Sungtaek; Hong, Sahwan; Kim, Yeonsoo; Nam, Yoonseung; Lee, Keundong; Yoon, Chansoo; Kim, Wondong; Park, Bae Ho

    2014-01-01

    High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self-assembled by field-induced oxygen migration (FIOM) at the interface of an oxide-conductor/oxide-insulator or oxide-conductor/metal. The formation via FIOM of an ultra-thin oxide layer with a thickness of approximately 2–5 nm and 2.5% excess oxygen content is demonstrated using cross-sectional transmission electron microscopy and secondary ion mass spectroscopy depth profile. The observed RS behavior, such as the polarity dependent forming process, can be attributed to the formation of an ultra-thin oxide layer. In general, as oxygen ions are mobile in many oxide-conductors, FIOM can be used for the formation of ultra-thin oxide layers with desired properties at the interfaces or surfaces of oxide-conductors in high-performance oxide-based devices. PMID:25362933

  12. Electrochromic performance, wettability and optical study of copper manganese oxide thin films: Effect of annealing temperature

    NASA Astrophysics Data System (ADS)

    Falahatgar, S. S.; Ghodsi, F. E.; Tepehan, F. Z.; Tepehan, G. G.; Turhan, İ.

    2014-01-01

    In the present work, the nanostructured copper manganese oxide (CMO) thin films were prepared from acetate based sol-gel precursors and deposited on glass and indium tin oxide (ITO) substrates by dip-coating technique. The films were annealed at 300, 400 and 500 °C in ambient atmosphere. The effects of annealing temperature on structural, morphological, wettability, electrochromic and optical properties of CMO thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDX), water contact angle measurement (WCA), cyclic voltammetry (CV) measurements and ultraviolet-visible (UV-vis) spectrophotometery. The presence of mixed oxide phases comprising of copper manganese oxide (CuMn2O4) and manganese oxide at different annealing temperature was confirmed by XRD patterns. The results showed that the Mn3O4 phase has been changed to Mn2O3 when the annealing temperature is increased from 300 to 500 °C. The FESEM images indicated that the granular surface morphology was sensitive to annealing temperature. EDX studies indicated that the thin films contained O, Mn and Cu species. Wettability studies showed that the water contact angle of the nanostructured CMO thin films coated on glass substrates was influenced by the variation of annealing temperature and the surface nature of thin films was changed from hydrophilic to hydrophobic. The results of CVs measurement indicated that the anodic and cathodic charge density and capacitance of all CMO samples decreased with increasing scan rate in potential range of -1-1 eV. Also, the annealed CMO thin film at 500 °C showed better electrochromic performance with respect to other samples at lower scan rate. The thickness, refractive index, extinction coefficient and optical band gap of thin films coated on glass substrates were calculated from reflectance and transmittance spectra using an iterative numerical method. The optical band gap of

  13. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    NASA Astrophysics Data System (ADS)

    Denayer, Jessica; Bister, Geoffroy; Simonis, Priscilla; Colson, Pierre; Maho, Anthony; Aubry, Philippe; Vertruyen, Bénédicte; Henrist, Catherine; Lardot, Véronique; Cambier, Francis; Cloots, Rudi

    2014-12-01

    Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  14. Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Matsumoto, Hironaga; Sekine, Masato; Miura, Noboru; Nakano, Ryotaro; Matsumoto, Setsuko

    2005-02-01

    Zirconium-titanium-oxide thin films were prepared by multi-target rf reactive sputtering using metallic targets of zirconium and titanium. The compositional ratio of zirconium to titanium in the thin films was precisely controlled through rf power. Zirconium and titanium in the thin films were found to exist as mixtures of chemically bonded ZrO2 and TiO2 from XPS spectra. The zirconium-titanium-oxide thin films with compositional ratio x<0.42 were identified to have a tetragonal crystal structure, whereas those with x≥q 0.42 were identified to be in the amorphous state. The refractive index of the zirconium-titanium-oxide thin film at a wavelength of 550 nm changed from 2.25 to 2.55 according to compositional ratio x, and the dispersion of the refractive index was analyzed using the Lorentz oscillator model with four oscillators. It was clarified that the estimated oscillator energies E1 (10.5 eV) and E2 (6.5 eV) correspond to zirconium oxide, and that E3 (5.5 eV) and E4 (4.3 eV) correspond to titanium oxide from fundamental absorption spectra and photoconductivity.

  15. Synthesis and Applications of Titanium Oxide Nanotube Thin Films

    NASA Astrophysics Data System (ADS)

    Miyauchi, Masahiro; Tokudome, Hiromasa

    Layer-by-layer or vertically aligned TiO2 nanotube thin films were fabricated by using hydrothermally grown titanate nanotubes. These films were optically transparent and exhibited various functions. Layer-by-layer growth of TiO2 nanotubes on glass substrates was achieved by alternate layer deposition using an aqueous solution of colloidal titanate nanotubes and that of a polycation. These films exhibited photoinduced hydrophilic conversion, low-reflectivity, and significant electrochromism, owing to their unique one dimensional open-pore nanostructure. In addition, transparent thin films of vertically aligned TiO2 nanotube arrays were grown by a hydrothermal treatment of metal Ti thin film on glass substrates. These nanotube arrays were well adhered to the substrates and exhibited super-hydrophilicity even under the dark condition and the efficient electron field emission.

  16. Copper oxide thin-flim and nanowire for e-textile applications

    NASA Astrophysics Data System (ADS)

    Han, Jin-Woo; Lohn, Andrew; Kobayashi, Nobuhiko P.; Meyyappan, M.

    2011-10-01

    Devices fabricated using nanowire structures can provide performance enhancement as well as open new applications. Integration of electronics into textile, referred to as e-textile, offers an opportunity for future electronics. Herein, copper and copper oxide based nanostructures are embedded for e-textile. Metallic copper wire is utilized as a growth substrate, which is simultaneously used as the fiber of mesh textiles. Among various metals, copper is promising as it is non-toxic and relatively abundant on earth. The motivating factor is ease of growth of nanostructures; the nanowire and thin-film forms are synthesized by self-catalytic vapor-solid growth. Simply heating with oxygen gas can form copper oxide nanowires or thin-film depending on the growth conditions. As key building blocks in e-textile, memory, transistor, and interconnect are presented. The resistive memory is comprised of copper oxide thin-film sandwiched within two orthogonal fibers. For a metal semiconductor field effect transistor (MESFET), a Schottky junction is used as the gate to channel barrier. The copper fiber and copper oxide thin-film are devoted to the gate and channel, respectively. For an interconnection, the neighboring fibers are electrically connected by transforming copper oxide nanowires into copper nanowires. Hydrogen thermal reduction of copper oxide is proved to be effective to make conductive nanowires.Inp

  17. Zinc-oxide nanorod/copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    NASA Astrophysics Data System (ADS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-11-01

    A novel p- n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 °C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 °C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 °C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  18. Preparation of Thin Melanin-Type Films by Surface-Controlled Oxidation.

    PubMed

    Salomäki, Mikko; Tupala, Matti; Parviainen, Timo; Leiro, Jarkko; Karonen, Maarit; Lukkari, Jukka

    2016-04-26

    The preparation of thin melanin films suitable for applications is challenging. In this work, we present a new alternative approach to thin melanin-type films using oxidative multilayers prepared by the sequential layer-by-layer deposition of cerium(IV) and inorganic polyphosphate. The interfacial reaction between cerium(IV) in the multilayer and 5,6-dihydroxyindole (DHI) in the adjacent aqueous solution leads to the formation of a thin uniform film. The oxidation of DHI by cerium(IV) proceeds via known melanin intermediates. We have characterized the formed DHI-melanin films using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-vis spectroscopy, and spectroelectrochemistry. When a five-bilayer oxidative multilayer is used, the film is uniform with a thickness of ca. 10 nm. Its chemical composition, as determined using XPS, is typical for melanin. It is also redox active, and its oxidation occurs in two steps, which can be assigned to semiquinone and quinone formation within the indole structural motif. Oxidative multilayers can also oxidize dopamine, but the reaction stops at the dopamine quinone stage because of the limited amount of the multilayer-based oxidizing agent. However, dopamine oxidation by Ce(IV) was studied also in solution by UV-vis spectroscopy and mass spectrometry in order to verify the reaction mechanism and the final product. In solution, the oxidation of dopamine by cerium shows that the indole ring formation takes place already at low pH and that the mass spectrum of the final product is practically identical with that of commercial melanin. Therefore, layer-by-layer formed oxidative multilayers can be used to deposit functional melanin-type thin films on arbitrary substrates by a surface-controlled reaction. PMID:27049932

  19. AFM, ellipsometry, XPS and TEM on ultra-thin oxide/polymer nanocomposite layers in organic thin film transistors.

    PubMed

    Fian, A; Haase, A; Stadlober, B; Jakopic, G; Matsko, N B; Grogger, W; Leising, G

    2008-03-01

    Here we report on the fabrication and characterization of ultra-thin nanocomposite layers used as gate dielectric in low-voltage and high-performance flexible organic thin film transistors (oTFTs). Reactive sputtered zirconia layers were deposited with low thermal exposure of the substrate and the resulting porous oxide films with high leakage currents were spin-coated with an additional layer of poly-alpha-methylstyrene (P alphaMS). After this treatment a strong improvement of the oTFT performance could be observed; leakage currents could be eliminated almost completely. In ellipsometric studies a higher refractive index of the ZrO(2)/P alphaMS layers compared to the "as sputtered" zirconia films could be detected without a significant enhancement of the film thickness. Atomic force microscopy (AFM) measurements of the surface topography clearly showed a surface smoothing after the P alphaMS coating. Further studies with X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) also indicated that the polymer definitely did not form an extra layer. The polymer chains rather (self-)assemble in the nano-scaled interspaces of the porous oxide film giving an oxide-polymer "nanocomposite" with a high oxide filling grade resulting in high dielectric constants larger than 15. The dielectric strength of more than 1 MV cm(-1) is in good accordance with the polymer-filled interspaces. PMID:17952415

  20. Submicron fabrication by local anodic oxidation of germanium thin films

    NASA Astrophysics Data System (ADS)

    Oliveira, A. B.; Medeiros-Ribeiro, G.; Azevedo, A.

    2009-08-01

    Here we describe a lithography scheme based on the local anodic oxidation of germanium film by a scanning atomic force microscope in a humidity-controlled atmosphere. The oxidation kinetics of the Ge film were investigated by a tapping mode, in which a pulsed bias voltage was synchronized and applied with the resonance frequency of the cantilever, and by a contact mode, in which a continuous voltage was applied. In the tapping mode we clearly identified two regimes of oxidation as a function of the applied voltage: the trench width increased linearly during the vertical growth and increased exponentially during the lateral growth. Both regimes of growth were interpreted taking into consideration the Cabrera-Mott mechanism of oxidation applied to the oxide/Ge interface. We also show the feasibility of the bottom-up fabrication process presented in this work by showing a Cu nanowire fabricated on top of a silicon substrate.

  1. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  2. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  3. Self-limiting layer-by-layer oxidation of atomically thin WSe2.

    PubMed

    Yamamoto, Mahito; Dutta, Sudipta; Aikawa, Shinya; Nakaharai, Shu; Wakabayashi, Katsunori; Fuhrer, Michael S; Ueno, Keiji; Tsukagoshi, Kazuhito

    2015-03-11

    Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices. PMID:25646637

  4. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm. PMID:26368388

  5. Conductor Formation Through Phase Transformation in Ti-Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Liu, Y. S.; Lin, Y. H.; Wei, Y. S.; Liu, C. Y.

    2012-01-01

    The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10-2 Ω cm for 12.5% O2, which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti2O3 and TiO2 phases during deposition. The Ti2O3 phase was transformed into the stable TiO2 phase during annealing. The Ti2O3-TiO2 phase transformation initiated the substitution reaction. The substitution of Ti4+ ions in the TiO2 phase for the Ti3+ ions in the Ti2O3 phase created the free electrons. This Ti2O3-TiO2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O2. This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices.

  6. Electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices

    NASA Astrophysics Data System (ADS)

    He, Zhen

    The focus of this dissertation is the electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices. The electrochemical reduction of metal oxides to metals has been studied for decades as an alternative to pyrometallurgical processes for the metallurgy industry. However, the previous work was conducted on bulk polycrystalline metal oxides. Paper I in this dissertation shows that epitaxial face-centered cubic magnetite (Fe3O4 ) thin films can be electrochemically reduced to epitaxial body-centered cubic iron (Fe) thin films in aqueous solution on single-crystalline Au substrates at room temperature. This technique opens new possibilities to produce special epitaxial metal/metal oxide heterojunctions and a wide range of epitaxial metallic alloy films from the corresponding mixed metal oxides. Electrodeposition, like biomineralization, is a soft solution processing method which can produce functional materials with special properties onto conducting or semiconducting solid surfaces. Paper II in this dissertation presents the electrodeposition of cobalt-substituted magnetite (CoxFe3-xO4, 0 of cobalt-substituted magnetite (CoxFe3-xO4, 0thin films and superlattices on Au single-crystalline substrates, which can be potentially used in spintronics and memory devices. Paper III in this dissertation reports the electrodeposition of crystalline cobalt oxide (Co3O4) thin films on stainless steel and Au single-crystalline substrates. The crystalline Co3O4 thin films exhibit high catalytic activity towards the oxygen evolution reaction in an alkaline solution. A possible application of the electrodeposited Co 3O4 is the fabrication of highly active and low-cost photoanodes for photoelectrochemical water-splitting cells.

  7. Electrochromism and Electronic Structures of Nitrogen Doped Tungsten Oxide Thin Films Prepared by RF Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Nakagawa, Koichi; Miura, Noboru; Matsumoto, Setsuko; Nakano, Ryotaro; Matsumoto, Hironaga

    2008-09-01

    The doping effect of nitrogen on amorphous tungsten trioxide (a-WO3) thin films was investigated with regard to electrochromism and electronic structures. The N-doped thin films exhibit a change in electrochromic coloration from transparent yellow to black, whereas the un-doped thin films exhibit blue coloration. In addition, a new absorption peak related to nitrogen doping is observed at 2.3 eV in photoabsorption spectra during the electrochemical coloration/bleaching process. To explain these experimental results, the electronic structures of N-doped tungsten oxide were calculated by the DV-Xα molecular orbital method.

  8. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    NASA Astrophysics Data System (ADS)

    Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  9. Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

    SciTech Connect

    Riech, I.; Acosta, M.; Pena, J. L.; Bartolo-Perez, P.

    2010-03-15

    Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO{sub 3} changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.

  10. Optical and structural characterization of iron oxide and cobalt oxide thin films at 800 nm

    NASA Astrophysics Data System (ADS)

    Garcia, Hans A.; de Melo, Ronaldo P.; Azevedo, Antonio; de Araújo, Cid B.

    2013-05-01

    We report on optical and structural properties of α-Fe2O3 and Co3O4 thin films, grown by direct oxidation of pure metal films deposited on soda-lime glass. Structural characteristics and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Linear optical absorption, and linear refraction as well as nonlinear optical properties were investigated. The third-order optical susceptibilities were measured applying the Thermally managed Z- scan technique using a Ti: sapphire laser (150 fs; 800 nm). The results obtained for the Co3O4 film were {Re} χ^{( 3 )} = -(5.7 ± 2.4) ×10-9 esu and {Im} χ^{(3)} = -(1.8 ± 0.2) ×10-8 esu while for the α-Fe2O3 film we determined {Re} χ^{(3)} = +(6.6 ± 2.4) ×10-10 esu and {Im} χ^{(3)} = +(2.2 ± 0.4) ×10-10 esu.

  11. Localized photoelectrochemistry on a tungsten oxide-iron oxide thin film material library.

    PubMed

    Kollender, Jan Philipp; Mardare, Andrei Ionut; Hassel, Achim Walter

    2013-12-01

    A WO3-Fe2O3 thin film combinatorial library was fabricated using a vapor phase co-deposition method followed by a combined thermal annealing and oxidation process. The scanning electron microscopy (SEM) analysis of the library microstructure combined with X-ray diffraction (XRD) investigations suggested that α-Fe2O3 grains preferentially grow from boundaries of domains, containing finer grains of WO3 and Fe2WO6, forming filiform networks on the surface. The surface density of the hematite networks depends on the amount of Fe present in the library. Photocurrents measured at different applied biases using Photo Electrochemical Scanning Droplet Cell Microscopy (PE-SDCM) were analyzed and mapped along the entire compositional spread. A distinctive photocurrent peak was detected at 21.9 atom % Fe, and its appearance was correlated to the higher amount of hematite present in the library at this specific composition together with a specific WO3 crystallographic orientation ((222) orthorhombic or (400) monoclinic). This finding is confirmed by qualitative and quantitative XPS surface analysis at the photocurrent peak position in the material library. Thus the enhancement of the photocurrent cannot be exclusively attributed to certain surface modifications since only hematite was found on the library surface at the peak composition. PMID:24151796

  12. Effect of substrate temperature on electrochromic properties of spray-deposited Ir-oxide thin films

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Kawar, R. K.; Sadale, S. B.

    2005-08-01

    Electrochromic iridium oxide thin films were prepared by using a simple and inexpensive spray pyrolysis technique onto fluorine doped tin oxide (FTO)-coated glass substrates, from iridium chloride solution. The substrate temperature was varied between 250 and 400 °C. The as-deposited samples were amorphous. The electrochromic properties of thin films were studied in aqueous electrolyte (0.5N H 2SO 4) using cyclic voltammetry (CV), chronoamperometry (CA) and spectroelectrochemical techniques. The films exhibit anodic electrochromism upon intercalation and deintercalation of H + ions. The colouration efficiency at 630 nm was calculated and found maximum for I 250 sample, owing its hydration.

  13. Fluorine compounds for doping conductive oxide thin films

    SciTech Connect

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  14. In situ TEM Studies of the Initial Oxidation stage of Cu and Cu Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Yang, Judith; Kang, Yihong; Luo, Langli; Ciston, James; Stach, Eric; Zhou, Guangwen

    2012-02-01

    The fundamental understanding of oxidation at the nanoscale is important for the environmental stability of coating materials as well as processing of oxide nanostructures. Our previous studies show the epitaxial growth of Cu2O islands during the initial stages of oxidation of Cu thin films, where surface diffusion and strain impact the oxide development and morphologies. The addition of secondary elements changes the oxidation mechanism. If the secondary element is non-oxidizing, such as Au, it will limit the Cu2O island growth due to the depletion of Cu near the oxide islands. When the secondary element is oxidizing, for example Ni, the alloy will show more complex behaviour, where duplex oxide islands were observed. Nucleation density and growth rate of oxide islands are observed under various temperatures and oxygen partial pressures (pO2) as a function of time by in situ ultra high vacuum (UHV)-transmission electron microscopy (TEM). Our initial results of Cu-Ni(001) oxidation is that the oxide epitaxy and morphologies change as function of Ni concentration. For higher spatial resolution, we are examining the atomic scale oxidation by aberration-corrected ETEM with 1å resolution.

  15. Growth morphology of thin films on metallic and oxide surfaces.

    PubMed

    Krupski, Aleksander

    2014-02-01

    In this work we briefly review recent investigations concerning the growth morphology of thin metallic films on the Mo(110) and Ni3Al(111) surfaces, and Fe and copper phthalocyanine (C32H16N8Cu) on the Al2O3/Ni3Al(111) surface. Comparison of Ag, Au, Sn, and Pb growth on the Mo(110) surface has shown a number of similarities between these adsorption systems, except that surface alloy formation has only been observed in the case of Sn and Au. In the Pb/Mo(110) and Pb/Ni3Al(111) adsorption systems selective formation of uniform Pb island heights during metal thin film growth has been observed and interpreted in terms of quantum size effects. Furthermore, our studies showed that Al2O3 on Ni3Al(111) exhibits a large superstructure in which the unit cell has a commensurate relation with the substrate lattice. In addition, copper phthalocyanine chemisorbed weakly onto an ultra-thin Al2O3 film on Ni3Al(111) and showed a poor template effect of the Al2O3/Ni3Al(111) system. In the case of iron cluster growth on Al2O3/Ni3Al(111) the nucleation sites were independent of deposition temperature, yet the cluster shape showed a dependence. In this system, Fe clusters formed a regular hexagonal lattice on the Al2O3/Ni3Al(111). PMID:24445588

  16. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

    PubMed

    Acharya, Susant K; Nallagatla, Raveendra Venkata; Togibasa, Octolia; Lee, Bo W; Liu, Chunli; Jung, Chang U; Park, Bae Ho; Park, Ji-Yong; Cho, Yunae; Kim, Dong-Wook; Jo, Janghyun; Kwon, Deok-Hwang; Kim, Miyoung; Hwang, Cheol Seong; Chae, Seung C

    2016-03-01

    Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters. PMID:26955744

  17. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors.

    PubMed

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  18. Theoretical Investigation of Supported Utra-Thin Cobalt/Nickel/Iron/Manganese Oxides

    NASA Astrophysics Data System (ADS)

    Bajdich, Michal; García Melchor, Max; Vojvodic, Alexandra

    In the last decade, a number of experiments have shown that ultra-thin layers of transition metal oxides (TMOs) can be stabilized when interfaced with precious metal supports such as Au(111) and Pt(111) or Ir(100). Moreover, gold supported Co/Ni/Mn-based catalysts have been experimentally proven to exhibit higher oxygen evolution reaction (OER) activities than other metal supported oxide catalysts. However, the synergistic effect of contact with gold support is yet to be fully understood. In this talk, I will report on our recent investigation of thermodynamic stability and and high water reactivity of ultra-thin cobalt oxide nanoislands supported on Au(111). Furthermore, the stability trends, scaling of the metal-support interaction and charge transfer of several Mn/Fe/Co/Ni supported oxides on all FCC(111) metals will be analyzed. The type and role of different edge sites for the OER activity of these nanoislands will be discussed.

  19. Electrical and optical characterization of multilayered thin film based on pulsed laser deposition of metal oxides

    NASA Astrophysics Data System (ADS)

    Marotta, V.; Orlando, S.; Parisi, G. P.; Giardini, A.; Perna, G.; Santoro, A. M.; Capozzi, V.

    2000-12-01

    Thin films of semiconducting oxides such as In2O3, SnO2, and multilayers of these two compounds have been deposited by reactive pulsed laser ablation, with the aim to produce toxic gas sensors. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (λ=532 nm) on silicon (1 0 0) substrates. A comparison, among indium oxide, tin oxide, and multilayers of indium and tin oxides, has been performed. The influence of physical parameters such as substrate temperature, laser fluence and oxygen pressure in the deposition chamber has been investigated. The deposited films have been characterized by X-ray diffraction (XRD), optical and electric resistance measurements.

  20. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

    PubMed Central

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  1. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  2. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  3. Induction of superconductivity of a La2CuO4 thin film chemically oxidized by NaClO

    NASA Astrophysics Data System (ADS)

    Wang, C. C.; Cui, M. L.; Zheng, X.; Zhu, J.

    High-quality, c-axis-oriented La2CuO4 thin films have been fabricated by the pulsed laser ablation technique. Superconductivity has been successfully induced in the films after chemical oxidation using sodium hypochlorite solution as oxidizing agent. The structural properties, surface morphology, and electrical resistivity before and after oxidation are compared. In addition, the oxidation mechanism is discussed.

  4. Magnetoelectric hexaferrite thin film growth on oxide conductive layer for applications at low voltages

    NASA Astrophysics Data System (ADS)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-08-01

    Magnetoelectric (ME) M-type hexaferrite thin films were deposited on conductive oxide layer of Indium-Tin Oxide (ITO) in order to lower applied voltages to observe ME effects at room temperature. The thin film of ME hexaferrites, SrCo2Ti2Fe8O19/ITO buffer layer, were deposited on sapphire substrate using Pulsed Laser Deposition (PLD) technique. The film exhibited ME effects as confirmed by vibrating sample magnetometer (VSM) in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe ME effects were typically 500 V and higher. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1064 G, and coercive field of 20 Oe for these thin films. The change rate in remanence magnetization was measured with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a ME coupling, α, of 5×10-10 s m-1 in SrCo2Ti2Fe8O19 thin films.

  5. Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film

    NASA Astrophysics Data System (ADS)

    Huang, Hung Ji; Liu, Bo-Heng

    2015-12-01

    The energy transformation of vertical incident light into energy for a chemical reaction is demonstrated in the endothermic oxidation of ammonium ions in a spinning disk reactor. The plasmonic enhancement on photocatalytic reaction demonstrated the generation of quantum hot charge on 1D quantum well of platinum thin film.

  6. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  7. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  8. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells.

    PubMed

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-14

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm(-2) at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm(-2)(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness. PMID:27595193

  9. Memory switches based on metal oxide thin films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1990-01-01

    MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

  10. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    PubMed

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. PMID:25274424

  11. Nonlinear optical properties of zinc oxide doped bismuth thin films using Z-scan technique

    NASA Astrophysics Data System (ADS)

    Abed, S.; Bouchouit, K.; Aida, M. S.; Taboukhat, S.; Sofiani, Z.; Kulyk, B.; Figa, V.

    2016-06-01

    ZnO doped Bi thin films were grown on glass substrates by spray ultrasonic technique. This paper presents the effect of Bi doping concentration on structural and nonlinear optical properties of zinc oxide thin films. These thin films were characterized by X-ray diffractometer technique. XRD analysis revealed that the ZnO:Bi thin films indicated good preferential orientation along c-axis perpendicular to the substrate. The nonlinear optical properties such as nonlinear absorption coefficient (β) and third order nonlinear susceptibility (Imχ(3)) are investigated. The calculations have been performed with a Z scan technique using Nd:YAG laser emitting 532 nm. The reverse saturable absorption (RSA) mechanism was responsible for the optical limiting effect. The results suggest that this material considered as a promising candidate for future optical device applications.

  12. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  13. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  14. Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

    NASA Astrophysics Data System (ADS)

    Gad, Karim M.; Vössing, Daniel; Balamou, Patrice; Hiller, Daniel; Stegemann, Bert; Angermann, Heike; Kasemann, Martin

    2015-10-01

    We analyze the influence of different oxidation methods on the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers with surface photo voltage and quasi-steady-state photo conductance measurements. We present a simple method by means of rapid thermal oxidation (RTO) and subsequent annealing in forming gas, which requires no complex surface pre-treatment or surface pre-conditioning after cleaning. This technique allows a reproducible preparation of high-quality ultra-thin oxide-nanolayers (1.3-1.6 nm) with a nearly intrinsic energetic distribution of interface states and a defect density of states of only 1 × 1012 cm-2 eV-1 at the minimum of the distribution. These results are compared with silicon oxide-nanolayers prepared by wet chemical oxidation and plasma oxidation where only a slight reduction of the interface defect density is achieved by subsequent anneal in forming gas environment. Furthermore, it is shown that applying the RTO oxide-nanolayer as an intermediate layer between Si and an a-SiNx:H layer, leads to a significant improvement of the surface passivation quality.

  15. Electrical Transport in Nanoscale Complex Oxide Thin Films: Strontium titanate and RNiO3

    NASA Astrophysics Data System (ADS)

    Son, Junwoo

    Complex oxide thin films have attracted significant attention due to a wealth of physical phenomena, such as ferroelectricity and Mott transitions arising from strong interactions in d-bands. Moreover, the physical phenomena observed in these materials exhibit sensitivities, which are not found in conventional semiconductors and give rise to abrupt changes in their physical properties. The richness of electronic phases and unique functionalities of complex oxides are attractive for applications in next-generation electronic devices. To realize new electronic devices with complex oxides, it is essential to understand the mechanisms of the electrical transport and to control the transport properties of complex oxide thin films. In this dissertation, electrical transport phenomena and their electrical control are experimentally studied in two different complex oxide thin film systems, exhibiting resistive switching and Mott metal-insulator transitions. The first part will briefly discuss resistive switching in ultrathin SrTiO3 tunnel junctions in metal-insulator-metal (MIM) geometry. The current-voltage characteristics provide hints of the origin of the resistive switching phenomena in SrTiO3 tunnel barriers, which are also relevant for resistive switching in thicker films. The second part focuses on the control of metal-insulator transitions in RNiO3, where R = trivalent rare earth ion, using different strategies: band-width control and band-filling control. The electrical transport in low-dimensional, strongly correlated LaNiO3 is explored in terms of band-width control by strain and dimensionality. A new concept of band-filling control in nanoscale NdNiO3 thin films by modulation doping is discussed, and the experimental charge injection from high-quality La-doped SrTiO3 into NdNiO3 thin films is experimentally studied. The potential and limitations of a Modulation-doped Mott Field Effect Transistor (MM-FET) for future "Mott" electronic devices is discussed.

  16. Thin-film solid-oxide fuel cells

    SciTech Connect

    Jankowski, A.F.

    1997-05-01

    Fuel cells are energy conversion devices that would save billions of dollars in fuel costs alone each year in the United States if they could be implemented today for stationary and transportation applications (1-5). There are a wide variety of fuel cells available, e.g. molten carbonate, phosphoric acid, proton exchange membrane and solid-oxide. However, solid-oxide fuel cells (SOFCS) are potentially more efficient and less expensive per kilowatt of power in comparison to other fuel cells. For transportation applications, the energy efficiency of a conventional internal combustion engine would be increased two-fold as replaced with a zero-emission SOFC. The basic unit of a SOFC consists of an anode and cathode separated by an oxygen-ion conducting, electrolyte layer. Manifolded stacks of fuel cells, with electrical interconnects, enable the transport and combination of a fuel and oxidant at elevated temperature to generate electrical current. Fuel cell development has proceeded along different paths based on the configuration of the anode-electrolyte-cathode. Various configurations include the tubular, monolithic and planar geometries. A planar geometry for the anode-electrolyte-cathode accompanied by a reduction in layer thickness offers the potential for high power density. Maximum power densities will require yet additional innovations in the assembly of fuel cell stacks with all of the manifolding stipulations for gas flow and electrical interconnects.

  17. Effect of the iridium oxide thin film on the electrochemical activity of platinum nanoparticles.

    PubMed

    Chen, Aicheng; La Russa, Daniel J; Miller, Brad

    2004-10-26

    The influence of the iridium oxide thin film on the electrocatalytic properties of platinum nanoparticles was investigated using the electro-oxidation of methanol and CO as a probe. The presence of the IrO(2) thin film leads to the homogeneous dispersion of Pt nanoparticles. For comparison, polycrystalline platinum and Pt nanoparticles dispersed on a Ti substrate in the absence of an IrO(2) layer (Ti/Pt) were also investigated in this study. Inverted and enhanced CO bipolar peaks were observed using an in situ electrochemical Fourier transform infrared technique during the methanol oxidation on the Pt nanoparticles dispersed on a Ti substrate. Electrochemical impedance studies showed that the charge transfer resistance was significantly lower for the Ti/IrO(2)/Pt electrode compared with that of the massive Pt and Ti/Pt nanoparticles. The presence of the IrO(2) thin film not only greatly increases the active surface area but also promotes CO oxidation at a much lower electrode potential, thus, significantly enhancing the electrocatalytic activity of Pt nanoparticles toward methanol electro-oxidation. PMID:15491204

  18. Thermochromic vanadium oxide thin films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Niklasson, G. A.; Li, S.-Y.; Granqvist, C. G.

    2014-11-01

    Vanadium dioxide, VO2, is a widely studied thermochromic material with potential applications in energy efficient window technology. It undergoes a first-order metal-to- insulator transition, accompanied by a crystal structure transformation from monoclinic to tetragonal rutile, at a critical temperature of 68 °C. Below this temperature, VO2 is semiconducting and infrared transmitting whereas it is metallic and infrared reflecting above the transition temperature. However, in order to achieve significant thermochromic switching, the luminous transmittance of thin films will typically be less than 50%. Here we report on recent research to improve the luminous transmittance as well as the transmittance change at the transition temperature. We systematically evaluate the effect of antireflection coatings, doping with Mg and the performance of coatings comprising thermochromic nanoparticles in a transparent matrix. The last option is shown to give the best performance and holds great promise for practical applications.

  19. Two mechanisms of resistive memories in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Jin, Kui-Juan; Wang, Can; Xu, Zhongtang

    2013-03-01

    Current-voltage hysteresis and switchable rectifying characteristics have been observed in epitaxial multiferroic BiFeO3 thin films. [1,2] It has been clearly demonstrated that ferroelectricity and conductivity coexist in a single phase. The forward direction of the rectifying current can be reversed repeatedly with polarization switching, indicating a switchable diode effect and large ferroelectric resistive switching phenomenon. LaMnO3 (LMO) films are deposited on SrTiO3:Nb (0.8 wt%) substrates under various oxygen pressures for obtaining various concentrations of oxygen vacancies in the LMO films. An aberration-corrected annular-bright-field scanning transmission electron microscopy with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressures during fabrication. Correspondingly, the resistive switching property becomes more pronounced with more oxygen vacancies contained in LMO films. *E-mail: kjjin@iphy.ac.cn

  20. Ion Beam Slicing of Single Crystal Oxide Thin Films

    SciTech Connect

    Thevuthasan, Suntharampillai; Shutthanandan, V; Jiang, Weilin; Weber, William J.; DB Poker, SC Moss, K-H Heinig

    2001-04-25

    Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0x10 16 H/cm. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

  1. Formation of surface oxides and Ag2O thin films with atomic oxygen on Ag(111)

    NASA Astrophysics Data System (ADS)

    Derouin, Jonathan; Farber, Rachael G.; Heslop, Stacy L.; Killelea, Daniel R.

    2015-11-01

    The nature of the oxygen species adsorbed to silver surfaces is a key component of the heterogeneously catalyzed epoxidation of ethylene and partial oxidation of methanol over silver catalysts. We report the formation of two different silver-oxygen species depending on the flux and energy of incident gas-phase oxygen atoms on an Ag(111) surface. A combination of surface science techniques was used to characterize the oxidized surfaces. Atomic oxygen was generated with an Ir filament; lower temperatures created surface oxides previously reported. When O was deposited with a higher filament temperature, the surface became highly corrugated, little subsurface oxygen was observed, and thin layers of Ag2O were likely formed. These results show that the energy and flux of oxygen are important parameters in the chemical identity and abundance of oxygen on silver surfaces and suggest that formation of the Ag2O thin film hinders formation of subsurface oxygen.

  2. Reliability characterizations and failure mechanism of ultra-thin oxides for MOS devices

    NASA Astrophysics Data System (ADS)

    Wang, Bin

    The aggressive scaling of smaller/faster logic and memory devices demands accurate reliability characterization and knowledge of the failure mechanisms of ultra-thin (<30 A) silicon dioxide (SiO 2) layers in the gates of metal-oxide semiconductor (MOS) structures. The increased occurrence of soft breakdown in ultra-thin oxide films necessitates the development of more sophisticated techniques to detect breakdown. One such technique is by interrupting stress and monitoring stress-induced leakage current (SILC) or interface state density (Dit). The effect of interrupting stress was carefully studied and determined not to affect device lifetime. A comprehensive time-dependent dielectric breakdown (TDDB) study was conducted on ultra-thin oxide over a temperature ranging from 220°C to 350°C to study temperature acceleration. The results of the study showed that both hard and soft breakdown modes exhibit the same temperature dependence. The choice of a failure model for time/charge to breakdown (tBD /QBD) is critical for accurate reliability extrapolation. In this work, two more experiments were carried out to clarify the current physical mechanisms responsible to dielectric wear-out. The first experiment investigated the effects of pulsed biased stress on device lifetime. A lifetime enhancement under bipolar pulse stress was observed. The results suggest that previously proposed mechanism of hole de-trapping in thick oxide may not be responsible for the lifetime increase observed here for ultra-thin oxides. The second experiment studied the effects of heavy ion on the reliability of ultra-thin SiO2. Annealing and electron injection experiments on irradiated devices with heavy ion implied that holes were significantly created and trapped inside SiO2 without causing the SiO2 to breakdown. The results from these two studies suggest that breakdown of ultra-thin oxides is not caused by holes and that the anode hole injection (AHI) model for constant voltage stress (CVS) is

  3. Reversible oxidation and rereduction of entire thin films of transition-metal phthalocyanines

    SciTech Connect

    Green, J.M.; Faulkner, L.R.

    1983-05-18

    Thin films (1000 to 2000A thick) of iron(II) (Fe), cobalt(II) (Co), nickel(II) (Ni), copper(II) (Cu), and zinc(II) (Zr) phthalocyanines (Pc) on gold or indium oxide electrodes undergo stoichiometric oxidation and rereduction. Except for FePc and CoPc, the process is essentially reversible. Chronocoulometry showed that ZnPc films oxidized to the extent of 1.21 electrons per ZnPc molecule; CoPc required 1.92 electrons per molecule. Charge compensation is attained upon oxidation by uptake of anions from the electrolyte and by expulsion of anions upon reduction. Auger electron spectrometry allowed detection of the ions and characterization of their distributions. In partially oxidized films, the anions appear to be homogeneously distributed. Oxidation seems to proceed at all grains with equal probability, with anions entering and departing along grain boundaries. Smaller anions allow full oxidation at rapid rates; larger ones inhibit the oxidation with respect to rate. Optical spectroscopy showed evidence for reorganizaton of the crystalline lattices. The rereduced form is not the same as the original material, but it can be restored to the original form by annealing at 125/sup 0/C. In cyclic oxidations and rereductions, there is a gradual loss of charge-consuming ability, apparently related to electrical isolation of small domains, perhaps grains. The oxidations and rereductions are electrochromic, and the various color changes are described. 10 figures, 1 table.

  4. Growth and characterization of single phase Cu2O by thermal oxidation of thin copper films

    NASA Astrophysics Data System (ADS)

    Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis

    2016-04-01

    We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can be achieved for oxidation temperatures between 250°C to 320°C. Cu2O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.

  5. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    NASA Astrophysics Data System (ADS)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  6. Thin film germanium on silicon created via ion implantation and oxide trapping

    NASA Astrophysics Data System (ADS)

    Anthony, R.; Knights, A. P.

    2015-06-01

    We present a novel process for integrating germanium with silicon-on-insulator (SOI) wafers. Germanium is implanted into SOI which is then oxidized, trapping the germanium between the two oxide layers (the grown oxide and the buried oxide). With careful control of the implantation and oxidation conditions this process creates a thin layer (current experiments indicate up to 20-30nm) of almost pure germanium. The layer can be used potentially for fabrication of integrated photo-detectors sensitive to infrared wavelengths, or may serve as a seed for further germanium growth. Results are presented from electron microscopy and Rutherford back-scattering analysis, as well as preliminary modelling using an analytical description of the process.

  7. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A F; Morse, J D

    1999-05-01

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, mainfold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by codeposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting interfacial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thickness on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600--1000 C), thereby rendering this fuel cell system suitable for miniaturization. Scaling towards miniaturization is accomplished by utilizing novel micromaching approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable.

  8. Electrochromic properties of electrodeposited tungsten oxide (WO3) thin film

    NASA Astrophysics Data System (ADS)

    Dalavi, D. S.; Kalagi, S. S.; Mali, S. S.; More, A. J.; Patil, R. S.; Patil, P. S.

    2012-06-01

    In this work, we report on a potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO3) films specifically for transmissive electrochromic devices (ECDs) such as "smart windows". WO3 film was confirmed from the binding energy determination by X-ray photoelectron spectroscopic studies. The diffusion coefficient during intercalation and deintercalation was found to be 2.59×10-10 and 2.40×10-10 cm2/C. Electrodeposited WO3 produce high color/bleach transmittance difference up to 74% at 630 nm. On reduction of WO3, the CIELAB 1931 2% color space coordinates show the transition from colorless to the deep blue state (L=95.18, a=2.12, b=0.3138, and L=57.78, a=-21.79, b=0.244) with steady decrease in relative luminance. The highest coloration efficiency (CE) of 92 cm2/C and good response time of 10.28 for coloration (reduction) and 3.2 s for bleaching (oxidation) was observed with an excellent reversibility of 89%.

  9. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  10. Flat-Band Potentials of Molecularly Thin Metal Oxide Nanosheets.

    PubMed

    Xu, Pengtao; Milstein, Tyler J; Mallouk, Thomas E

    2016-05-11

    Exfoliated nanosheets derived from Dion-Jacobson phase layer perovskites (TBAxH1-xA2B3O10, A = Sr, Ca, B = Nb, Ta) were grown layer-by-layer on fluorine-doped tin oxide and gold electrode surfaces. Electrochemical impedance spectra (EIS) of the five-layer nanosheet films in contact with aqueous electrolyte solutions were analyzed by the Mott-Schottky method to obtain flat-band potentials (VFB) of the oxide semiconductors as a function of pH. Despite capacitive contributions from the electrode-solution interface, reliable values could be obtained from capacitance measurements over a limited potential range near VFB. The measured values of VFB shifted -59 mV/pH over the pH range of 4-8 and were in close agreement with the empirical correlation between conduction band-edge potentials and optical band gaps proposed by Matsumoto ( J. Solid State Chem. 1996, 126 (2), 227-234 ). Density functional theory calculations showed that A-site substitution influenced band energies by modulating the strength of A-O bonding, and that subsitution of Ta for Nb on B-sites resulted in a negative shift of the conduction band-edge potential. PMID:27102083

  11. Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2011-02-01

    Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

  12. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  13. Rayleigh instability in polymer thin films coated in the nanopores of anodic aluminum oxide templates.

    PubMed

    Tsai, Chia-Chan; Chen, Jiun-Tai

    2014-01-14

    We study the Rayleigh instability of polystyrene (PS) thin films coated in the nanopores of anodic aluminum oxide (AAO) templates. After thermal annealing, the surface of the PS thin films undulates and the nanostructures transform from nanotubes to Rayleigh-instability-induced nanostructures (short nanorods with encapsulated air bubbles). With longer annealing times, the nanostructures further transform to nanorods with longer lengths. PS samples with two different molecular weights (24 and 100 kg/mol) are used, and their instability transformation processes are compared. The morphology diagrams of the nanostructures at different stages are also constructed to elucidate the mechanism of the morphology transformation. PMID:24380368

  14. Consequence of oxidant to monomer ratio on optical and structural properties of Polypyrrole thin film deposited by oxidation polymerization technique

    NASA Astrophysics Data System (ADS)

    Jatratkar, Aviraj A.; Yadav, Jyotiprakash B.; Kamat, Sandip V.; Patil, Vaishali S.; Mahadik, D. B.; Barshilia, Harish C.; Puri, Vijaya; Puri, R. K.

    2015-05-01

    This paper reports the effect of oxidant to monomer (O/M) ratio on optical and structural properties of Polypyrrole (PPy) thin film deposited by chemical oxidation polymerization technique. Noticeable changes have observed in the properties of PPy thin films with O/M ratio. Cauliflower structure have been observed in FE-SEM images, wherein grain size is observed to decrease with increase in O/M ratio. AFM results are in good agreement with FE-SEM results. From FTIR spectra it is found that, PPy is in highly oxidized form at low O/M ratio but oxidation decreased with increase in O/M ratio. Also C-C stretching vibrations of PPy ring is decreased whereas C=C stretching is increased with ratio. Absorption peak around 450 nm corresponds to π-π* transition and around 800 nm for polarons and bipolarons. The intensity of such peaks confirms the conductivity of PPy, which is observed maximum at low O/M ratio and found to decrease with increase in ratio. Optical band gap (BG) is found to increase from 2.07 eV to 2.11 eV with increase in the O/M ratio.

  15. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  16. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-04-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

  17. Properties of Silver Nanowire/Zinc Oxide Transparent Bilayer Thin Films for Optoelectronic Applications.

    PubMed

    You, Sslimsearom; Park, Yong Seo; Choi, Hyung Wook; Kim, Kyung Hwan

    2015-11-01

    We have investigated electrical, optical and structural properties of silver nanowire (AgNW)/zinc oxide (ZnO) transparent conductive bilayer films for optoelectronic applications. The AgNW/ZnO transparent conductive bilayer films were fabricated using spin-coating and facing target sputtering (FTS) method. The spin-coated the AgNW layer has advantages, such as low resistivity and high transmittance in visible range. However, the spin-coated AgNW layers can be oxidized by natural oxygen. Consequently, the conductivity of AgNW layer was strongly decreased. So, an oxidation prevented layer is necessary. The ZnO thin film layer on the Ag NW layer can be prevented oxidation. In addition, the peeling of spin-coated AgNW layer were prevented the deposited ZnO thin film layer. As the results, the sheet resistance and average transmittance in visible range of AgNW/ZnO transparent bilayer thin films exhibited 34.1 ohm/sq. and 83.46%. PMID:26726570

  18. Phase transitions via selective elemental vacancy engineering in complex oxide thin films.

    PubMed

    Lee, Sang A; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  19. Optical properties of thin In-Sn oxide films

    NASA Astrophysics Data System (ADS)

    Christian, K. D. J.; Shatynski, S. R.

    Indium-tin oxide (ITO) films were produced by evaporating an alloy of In-5wt%Sn in vacuum (1 × 10 -7 Torr) or in an oxygen partial pressure of 1 × 10 -4 Torr on soda-lime glass. After evaporation, these films were annealed in air at 95°C for 22 h. The films were examined using a ratio recording spectrophotometer to determine the transmission of both the visible and infra-red radiation. Further analysis of the samples was performed using SEM and EDAX analysis. Excellent optical properties were obtained for ITO films on soda-lime glass by evaporating 250 Å of In-5wt%Sn in an oxygen environment of 1 × 10 -4 Torr on a substrate held at 50°C and annealing at 95°C for 22 h.

  20. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGESBeta

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  1. Enhanced optical constants of nanocrystalline yttrium oxide thin films

    SciTech Connect

    Ramana, C. V.; Mudavakkat, V. H.; Bharathi, K. Kamala; Atuchin, V. V.; Pokrovsky, L. D.; Kruchinin, V. N.

    2011-01-17

    Yttrium oxide (Y{sub 2}O{sub 3}) films with an average crystallite-size (L) ranging from 5 to 40 nm were grown by sputter-deposition onto Si(100) substrates. The optical properties of grown Y{sub 2}O{sub 3} films were evaluated using spectroscopic ellipsometry measurements. The size-effects were significant on the optical constants and their dispersion profiles of Y{sub 2}O{sub 3} films. A significant enhancement in the index of refraction (n) is observed in well-defined Y{sub 2}O{sub 3} nanocrystalline films compared to that of amorphous Y{sub 2}O{sub 3}. A direct, linear L-n relationship found for Y{sub 2}O{sub 3} films suggests that tuning optical properties for desired applications can be achieved by controlling the size at the nanoscale dimensions.

  2. Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films.

    PubMed

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-03-01

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. Charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques. PMID:26836282

  3. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    SciTech Connect

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-02-04

    Tungsten oxide (WO{sub x}) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 Multiplication-Sign 10{sup -4} S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO{sub x}-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 Multiplication-Sign 10{sup 6}, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm{sup 2}/V s was realized. Our results demonstrated that WO{sub x}-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  4. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    NASA Astrophysics Data System (ADS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-02-01

    Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10-4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 106, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm2/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  5. The effectiveness of electron holography, microscopy, and energy-loss spectroscopy in characterizing thin silicon oxide-nitride-oxide structures

    NASA Astrophysics Data System (ADS)

    Waytena, G. L.; Hren, J.; Rez, P.

    1993-02-01

    High-resolution transmission electron microscopy, electron holography, and high-spatial- resolution (19 Å) computer-controlled parallel electron-energy-loss spectrometry (PEELS) were used to probe the structure of and chemical profile across two thin silicon oxide-nitride-oxide layered structures of nominal widths of 10 Å-50 Å-10 Å and 30 Å-50 Å-30 Å. It was found that the individual layers of the stacked structures could be clearly imaged using electron holography, but not with electron microscopy due to the behavior of the microscope transfer function and the shape of the potential profile of the structure. Holography revealed that the layers of the 10 Å-50 Å-10 Å system were in fact 14 Å-28 Å-18 ż5 Å, and the oxide layer in contact with the substrate (first oxide layer) was discontinuous. PEELS showed that the second oxide layer contained nitrogen, and the nitride layer had a silicon-to-nitrogen concentration ratio of 1.0±0.1. The 30 Å-50 Å-30 Å system was in fact 30 Å-20 Å-40 Å-15 ż5 Å. The second oxide layer was SiO1.6±0.2, and nitrogen was found near the film surface which made the structure appear to be four layers. These results show the power of holography in characterizing thin, light-element, amorphous layers and the importance of computer-controlled parallel energy-loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

  6. Formation of thin walled ceramic solid oxide fuel cells

    DOEpatents

    Claar, Terry D.; Busch, Donald E.; Picciolo, John J.

    1989-01-01

    To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

  7. Interface engineered multifunctional oxide thin films with optimized properties

    NASA Astrophysics Data System (ADS)

    Collins, Gregory Roy

    2010-06-01

    In our world today, energy has become one of the most valuable resources, in particular, renewable and clean energy sources. The research presented here represents an investigation into three separate areas of this topic. In thin film applications, the ordered structures as well as the inherent thinness of the films precludes the normal physics found in bulk materials. Characterizations of films of this type can provide information on molecular level charge transfer processes of the film layer materials since diffusive properties are minimal. With the control given by pulsed laser deposition methods, film and interface structure can be altered allowing for an examination of these effects on the materials properties. For the electrolyte and cathode materials, this equates to finding thermal and PO2 dependencies for electronic and ionic transport. For barium titanate, aside from the effects of oxygen vacancies, the interface quality between the electrodes and the ferroelectric material determines the effectiveness of energy transfer between these boundaries. That is, poor bonding characteristics or the formation of intermediate layers will introduce inconsistencies and (possibly) unwanted piezoelectric response properties of the material which could introduce parasitic dampening (resistance) of the mechanical vibrations of a piezoelectric transducer, altering its resonant characteristics. The clean reaction products and potential for high power outputs provide a strong impetus into investigations of fuel cell structures to improve their functionality. With conventional applications being dominated by high temperature (>700 °C) cells utilizing YSZ as an electrolyte medium, much gain can be made in efficiency through the lowering of cell operation temperature. The first part of my research focuses on the growth and characterization of a novel multilayered electrolyte structure consisting of alternating layers of GCO and YSZ for use in a medium temperature (400--600

  8. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  9. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    SciTech Connect

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-08-06

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) {approx}2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization.

  10. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  11. Electrochromic properties of WO3 thin film onto gold nanoparticles modified indium tin oxide electrodes

    NASA Astrophysics Data System (ADS)

    Deng, Jiajia; Gu, Ming; Di, Junwei

    2011-04-01

    Gold nanoparticles (GNPs) thin films, electrochemically deposited from hydrogen tetrachloroaurate onto transparent indium tin oxide (ITO) thin film coated glass, have different color prepared by variation of the deposition condition. The color of GNP film can vary from pale red to blue due to different particle size and their interaction. The characteristic of GNPs modified ITO electrodes was studied by UV-vis spectroscopy, scanning electron microscope (SEM) images and cyclic voltammetry. WO3 thin films were fabricated by sol-gel method onto the surface of GNPs modified electrode to form the WO3/GNPs composite films. The electrochromic properties of WO3/GNPs composite modified ITO electrode were investigated by UV-vis spectroscopy and cyclic voltammetry. It was found that the electrochromic performance of WO3/GNPs composite films was improved in comparison with a single component system of WO3.

  12. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    SciTech Connect

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  13. Formation of thin tungsten oxide layers: characterization and exposure to deuterium

    NASA Astrophysics Data System (ADS)

    Addab, Y.; Martin, C.; Pardanaud, C.; Khayadjian, J.; Achkasov, K.; Kogut, D.; Cartry, G.; Giacometti, G.; Cabié, M.; Gardarein, J. L.; Roubin, P.

    2016-02-01

    Thin tungsten oxide layers with thicknesses up to 250 nm have been formed on W surfaces by thermal oxidation following a parabolic growth rate. The reflectance of the layers in the IR range 2.5-16 μm has been measured showing a decrease with the layer thickness especially at low wavelengths. Raman microscopy and x-ray diffraction show a nanocrystalline WO3 monoclinic structure. Low energy deuterium plasma exposure (11 eV/D+) has been performed inducing a phase transition, a change in the sample colour and the formation of tungsten bronze (D x WO3). Implantation modifies the whole layer suggesting a deep diffusion of deuterium inside the oxide. After exposure, a deuterium release due to the oxidation of D x WO3 under ambient conditions has been evidenced showing a reversible deuterium retention.

  14. Electrochemical properties of highly degenerate and low cost cadmium oxide thin films

    NASA Astrophysics Data System (ADS)

    Mundinamani, S. P.; Rabinal, M. K.

    2015-11-01

    In the present work, we describe a simple and easy method for the deposition of nanostructured cadmium oxide films on glass by spray pyrolysis. The electrochemical capacitive properties of these films have been studied for different electrolyte species under the different scan rates. The present results show a high value of specific capacitance of 18 F g-1 in 1 M NaOH electrolyte for the scan rate of 10 mV s-1. This value of specific capacitance is the highest ever reported value for cadmium oxide thin films. These results emphasize that the ion diffusion between the electrode and the electrolyte is significantly high due to the highly porous nanostructure of cadmium oxide and these results confirms the cadmium oxide as a capacitive material. The constructed devices were stable even after the 1000 cycle.

  15. Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

    SciTech Connect

    Trifonov, A. S.; Lubenchenko, A. V.; Polkin, V. I.; Pavolotsky, A. B.; Ketov, S. V.; Louzguine-Luzgin, D. V.

    2015-03-28

    Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.

  16. Growth of textured thin Au coatings on iron oxide nanoparticles with near infrared absorbance

    PubMed Central

    Ma, L L; Borwankar, A U; Willsey, B W; Yoon, K Y; Tam, J O; Sokolov, K V; Feldman, M D; Milner, T E; Johnston, K P

    2013-01-01

    A homologous series of Au-coated iron oxide nanoparticles, with hydrodynamic diameters smaller than 60 nm was synthesized with very low Auto-iron mass ratios as low as 0.15. The hydrodynamic diameter was determined by dynamic light scattering and the composition by atomic absorption spectroscopy and energy dispersive x-ray spectroscopy (EDS). Unusually low Au precursor supersaturation levels were utilized to nucleate and grow Au coatings on iron oxide relative to formation of pure Au nanoparticles. This approach produced unusually thin coatings, by lowering autocatalytic growth of Au on Au, as shown by transmission electron microscopy (TEM). Nearly all of the nanoparticles were attracted by a magnet indicating a minimal amount of pure Au particles The coatings were sufficiently thin to shift the surface plasmon resonance (SPR) to the near infrared (NIR), with large extinction coefficients., despite the small particle hydrodynamic diameters, observed from dynamic light scattering to be less than 60 nm. PMID:23238021

  17. THE ORIGIN OF UNUSUAL DISLOCATION STRUCTURES OBSERVED IN ION-THINNED NICKEL OXIDE

    SciTech Connect

    Little, J.A.; Schmid, H.; Ruhle, M.; Westmacott, K.

    1980-05-01

    Ion-thinned single crystals of nickel oxide were examined and found to contain some unusual dislocation configurations showing anomalous contrast under certain diffracting conditions. These configurations took the form of glissile dislocations threading the foil but leaving long trailing dislocations in the near surface region at both top and bottom surfaces. The Burgers vector of the dislocations was identified as a/2 <110> as expected for nickel oxide, and the contrast anomalies were ascribed to certain surface effects. The dislocations themselves were thought to have arisen as a result of cleavage processes in the crystal, and their retention in the foil is attributed to the formation of reduced surface layers during the ion thinning.

  18. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    NASA Astrophysics Data System (ADS)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  19. Ultrastrong, Chemically Resistant Reduced Graphene Oxide-based Multilayer Thin Films with Damage Detection Capability.

    PubMed

    Guin, Tyler; Stevens, Bart; Krecker, Michelle; D'Angelo, John; Humood, Mohammad; Song, Yixuan; Smith, Ryan; Polycarpou, Andreas; Grunlan, Jaime C

    2016-03-01

    Multilayer thin films of graphene oxide (GO) and poly(vinylamine) (PVAm) were deposited via layer-by-layer assembly. Poly(vinylamine) pH was used to tailor film thickness and GO layer spacing. Graphene oxide concentration in the films was controlled through simple pH adjustment. Thermal reduction of the PVAm/GO multilayer thin films rendered them electrically conductive, which could be further tailored with PVAm pH. These reduced films also exhibited exceptionally high elastic modulus of 30 GPa and hardness of 1.8 GPa, which are among the highest of any graphene-filled polymer composite values ever reported. Cross-linking of these films with glutaraldehyde improved their chemical resistance, allowing them to survive strongly acidic or salty solutions. Additionally, scratches in the films can be instantaneously detected by a simple electrical resistance measurement. These films are promising for a variety of packaging and electronic applications. PMID:26885558

  20. Electrochemical and structural properties of radio frequency sputtered cobalt oxide electrodes for thin-film supercapacitors

    NASA Astrophysics Data System (ADS)

    Kim, Han-Ki; Seong, Tae-Yeon; Lim, Jae-Hong; Cho, Won, Ii; Soo Yoon, Young

    The electrochemical and structural properties of cobalt oxide films which are deposited at different sputtering gas-ratios of O 2/(Ar+O 2) are investigated. In order to examine the electrochemical properties of the as-deposited films, all solid-state thin-film supercapacitors (TFSCs) are fabricated. There consist of Co 3O 4 electrodes and an amorphous LiPON thin-film electrolyte. It is shown that the capacitance behaviour of the Co 3O 4/LiPON/Co 3O 4 TFSCs is similar to bulk-type supercapacitor behaviour. It is further shown that the electrochemical behaviour of the TFSCs is dependent on the sputtering gas-ratios. The gas-ratio dependence of the capacitance of the oxide electrode films is discussed based on X-ray diffraction (XRD) and electrical results for the Co 3O 4 films.

  1. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    PubMed

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  2. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    PubMed Central

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  3. Effects of nitrogen flow rate on the properties of indium oxide thin films.

    PubMed

    Cho, Shinho; Kim, Moonhwan

    2013-11-01

    Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices. PMID:24245335

  4. Sodium manganese oxide thin films as cathodes for Na-ion batteries

    SciTech Connect

    Baggetto, Loic; Carroll, Kyler J; Unocic, Raymond R; Bridges, Craig A; Meng, Ying Shirley; Veith, Gabriel M

    2014-01-01

    This paper presents the fabrication and characterization of sodium manganese oxide cathode thin films for rechargeable Na-ion batteries. Layered oxide compounds of nominal compositions Na0.6MnO2 and Na1.0MnO2 have been prepared by radio frequency magnetron sputtering and post-annealing at high temperatures under various conditions. The Na0.6MnO2 thin films possess either a hexagonal or orthorhombic structure while the Na1.0MnO2 films crystallize in a monoclinic structure, as shown by X-ray diffraction and X-ray absorption spectroscopy results. The potential profiles of the film cathodes are characterized by features similar to those measured for the powders and exhibit reversible storage capacities in the range of 50-60 Ah cm-2 m-1, which correspond to about 120-140 mAh g-1, and are maintained over 80 cycles.

  5. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    SciTech Connect

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; Hayes, J.; Moreno, K. A.; Wu, J. J.; Nikroo, A.; Alford, C. A.; Hamza, A. V.; Kucheyev, S. O.; Wang, Y. M.; Wu, K. J.

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsule with a thin oxide layer will be discussed.

  6. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  7. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  8. Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films.

    PubMed

    Ahvenniemi, E; Matvejeff, M; Karppinen, M

    2015-05-01

    A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-δ thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-δ system. PMID:25826428

  9. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

    PubMed

    Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2003-05-23

    We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics. PMID:12764192

  10. Operational characteristics of thin film solid oxide fuel cells with ruthenium anode in natural gas

    NASA Astrophysics Data System (ADS)

    Takagi, Yuto; Kerman, Kian; Ko, Changhyun; Ramanathan, Shriram

    2013-12-01

    Direct utilization of hydrocarbons in low temperature solid oxide fuel cells is of growing interest in the landscape of alternative energy technologies. Here, we report on performance of self-supported micro-solid oxide fuel cells (μSOFCs) with ruthenium (Ru) nano-porous thin film anodes operating in natural gas and methane. The μSOFCs consist of 8 mol% yttria-stabilized zirconia thin film electrolytes, porous platinum cathodes and porous Ru anodes, and were tested with dry natural gas and methane as fuels and air as the oxidant. At 500 °C, comparable power densities of 410 mW cm-2 and 440 mW cm-2 were obtained with dry natural gas and methane, respectively. In weakly humidified natural gas, open circuit voltage of 0.95 V at 530 °C with peak power density of 800 mW cm-2 was realized. The μSOFC was continuously operated at constant voltage of 0.7 V with methane, where quasi-periodic oscillatory behavior of the performance was observed. Through post-operation XPS studies it was found that the oxidation state of Ru anode surfaces significantly differs depending on the fuel used, oxidation being enhanced with methane or natural gas. The nature of the oscillation is discussed based on the transition in surface oxygen coverage states and electro-catalytic activity of Ru anodes.

  11. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  12. Oxidation of thin ErSi 1.7 overlayers on Si(111)

    NASA Astrophysics Data System (ADS)

    Guerfi, N.; Tan, T. A. Nguyen; Veuillen, J. Y.; Lollman, D. B.

    The oxidation of ErSi 1.7 thin films, epitaxially grown on Si(111)(7×7) surfaces by solid phase epitaxy, has been investigated by X-ray and UV photoelectron spectroscopies. Oxidation has been carried out at room temperature under low pressure (≤ 2×10 -5mbar) and 1 atm of oxygen, and at 700°C under 2 × 10 -5 mbar of oxygen. In all cases, both Si and Er react with oxygen. At room temperature the reaction depends on the pressure. Under low pressure the silicide surface is rather inert: a chemisorption phase of oxygen on Si and Er is detected only after exposures < 10 3 langmuir. High oxygen pressure produces a thin layer of mixed SiO 2, Si su☐ides and Er 2O 3. At 700°C, SiO 2 and Er 2O 3 are simultaneously formed, thus implying the decomposition of the silicide. The oxide layer has a SiO 2 termination at the surface. Only about half of the decomposed Si atoms react with oxygen. The preferential oxidation of Er is attributed to the high value of the heat of formation of Er 2O 3. An oxidation mechanism is proposed.

  13. Engineered interfaces and nano-scale thin films for solid oxide fuel cell electrolytes

    NASA Astrophysics Data System (ADS)

    Nandasiri, Manjula I.

    Solid state electrolytes with high oxygen ionic conductivity at low temperatures are required to develop cost effective and efficient solid oxide fuel cells. This study investigates the influence of engineered interfaces on the oxygen ionic conductivity of nano-scale multilayer thin film electrolytes. The epitaxial Sm2O3 doped CeO2 (SDC) and Sc2O3 stabilized ZrO2 (ScSZ) are selected as the alternative layers for the proposed multilayer thin film electrolyte based on the optimum structural, chemical, and electrical properties reported in the previous studies. The epitaxial SDC(111)/ScSZ(111) multilayer thin films are grown on high purity Al2O3(0001) substrates by oxygen-plasma assisted molecular beam epitaxy. Prior to the deposition of multilayers, the growth parameters are optimized for epitaxial CeO 2, ZrO2, SDC, and ScSZ thin films. The epitaxial orientation and surface morphology of CeO2 thin films shows dependency on the growth rate. Epitaxial CeO2(111) is obtained at relatively high growth rates (>9 A/min) at a substrate temperature of 650°C and an oxygen partial pressure of 2 x 10 -5 Torr. The same growth parameters are used for the deposition of ZrO2 thin films. ZrO2 exhibits both monoclinic and cubic phases, which is stabilized in the cubic structure by doping with Sc 2O3. The Sm and Sc evaporation rates are varied during the growth to obtain thin films of 15 mol % SmO1.5 doped CeO2 and 20 mol % ScO1.5 stabilized ZrO2, respectively. The SDC/ScSZ multilayer thin films are grown using the same growth parameters by varying the number of layers. The SDC/ScSZ multilayer thin films show significant enhancement in the oxygen ionic conductivity in comparison to single layer SDC and ScSZ thin films. The increase in the oxygen ionic conductivity with the increase in number of layers can be attributed to lattice mismatch induced ionic conductivity along the interfaces. The 8-layer film exhibits the maximum oxygen ionic conductivity with one order of magnitude

  14. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    SciTech Connect

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A.; Robertson, J.D.

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  15. Gas Barrier and Separation Behavior of Graphene Oxide Nanobrick Wall Thin Films

    NASA Astrophysics Data System (ADS)

    Grunlan, Jaime

    2015-03-01

    In many cases, electronics packaging requires electrical conductivity and barrier to oxygen, even under humid conditions. These two properties have simultaneously been realized through the use of surfactant-free aqueous layer-by-layer (LbL) processing, in the form of a polymer composite nanocoating. By layering graphene oxide (GO) with polyethyleneimine (PEI), a ``nano brick wall'' structure has been created, imparting gas barrier properties to the film. Reducing the graphene oxide with a thermal treatment further produces high oxygen barrier in humid conditions and imparts high electrical conductivity (σ ~ 1750 S/m). These thin films (<400 nm) are flexible relative traditional conductive thin films (e.g. ITO), and processing occurs under ambient conditions with water as the only solvent. Additionally, these PEI/GO thin films exhibit H2/CO2 selectivity (>300), making them interesting for gas purification membranes. The flexible nature of the aforementioned thin films, along with their excellent combination of transport properties, make them ideal candidates for use in a broad range of electronics and other packaging applications.

  16. Dynamic configuration of reduced graphene oxide in aqueous dispersion and its effect on thin film properties.

    PubMed

    Wang, Yufei; Zhang, Xuehua; Li, Dan

    2015-12-28

    The dynamic configuration of reduced graphene oxide (rGO) in an aqueous dispersion is revealed by several characterization methods, showing a spontaneous and seemingly irreversible configuration transition from flat to highly corrugated sheets over time. Such dynamic behaviour of rGO leads to a tailored porous structure of graphene-based thin films. This affects their permeation and electrochemical properties, as well as future industry adoption of graphene. PMID:26498678

  17. Photon synthesis of iron oxide thin films for thermo-photo-chemical sensors

    NASA Astrophysics Data System (ADS)

    Mulenko, S. A.; Petrov, Yu. N.; Gorbachuk, N. T.

    2012-09-01

    Ultraviolet photons of KrF-laser (248 nm) and of photodiode (360 nm) were used for the synthesis of iron oxide thin films with variable thickness, stoichiometry and electrical properties. The reactive pulsed laser deposition (RPLD) method was based on KrF-laser and photon-induced chemical vapor deposition (PCVD) was based on a photodiode. Deposited films demonstrated semiconductor properties with variable band gap (Eg). The film thickness (50-140 nm) and Eg depended on the laser pulse number, oxygen and iron carbonyl vapor pressure in the deposition chamber, and exposure time to the substrate surface with ultraviolet (UV) radiation. Sensing characteristics strongly depended on electrical and structural properties of such thin films. Iron oxide films were deposited on <1 0 0> Si substrate and had large thermo electromotive force (e.m.f.) coefficient (S) and high photosensitivity (F). The largest value of the S coefficient obtained by RPLD was about 1.65 mV/K in the range 270-290 K and by PCVD was about 1.5 mV/K in the range 280-322 K. The largest value F obtained by RPLD and PCVD was about 44 Vc/W and 40 Vc/W, accordingly, for white light at power density (I ≅ 0.006 W/cm2). It was shown that the S coefficient and F strongly depended on Eg. Moreover, these films were tested as chemical sensors: the largest sensitivity of NO molecules was at the level of 3 × 1012 cm-3. Our results showed that RPLD and PCVD were used to synthesize semiconductor iron oxide thin films with different sensing properties. So iron oxide thin films synthesized by UV photons are up-to-date materials for multi-parameter sensors: thermo-photo-chemical sensors operating at moderate temperature.

  18. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  19. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-01

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10-4 Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  20. Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

    DOEpatents

    Tracy, C.E.; Benson, D.K.; Ruth, M.R.

    1985-08-16

    A method of synthesizing a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

  1. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  2. An (ultra) high-vacuum compatible sputter source for oxide thin film growth.

    PubMed

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-01

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important--yet hardly volatile--materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO2 and yttrium-stabilized ZrO2, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems. PMID:24089841

  3. Impact of glycerol on zinc-oxide-based thin film transistors with indium molybdenum oxide transparent electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Flores, Raquel; Viegas, Jaime

    2016-02-01

    We report the fabrication of thin film transistors with ZnO channel and indium molybdenum oxide electrodes by sputtering. The fabricated transistors were then exposed to glycerol. We observe a temporary change in device performance after immersion of the FET in glycerol. Control structures without channel material are also used for demonstrating that the effect of saturation current increase is not due to glycerol alone as sugar alcohol is a low conductive medium. Various electrical and optical parameters are extracted. The presented results are useful for further integration of photonics and electronics in sensing applications

  4. Single-Layer Light-Emitting Diodes Using Organometal Halide Perovskite/Poly(ethylene oxide) Composite Thin Films.

    PubMed

    Li, Junqiang; Bade, Sri Ganesh R; Shan, Xin; Yu, Zhibin

    2015-09-16

    Organometal halide perovskite and poly(ethylene oxide) composite thin films are studied. Single-layer light-emitting diodes using the composite thin film sandwiched between indium tin oxide and indium-gallium eutectic alloy exhibit a low turn-on voltage and high brightness because of the ionic conductivity of the composite film and the formation of a p-i-n homojunction. PMID:26247326

  5. Influence of film thickness on laser ablation threshold of transparent conducting oxide thin-films

    NASA Astrophysics Data System (ADS)

    Rung, S.; Christiansen, A.; Hellmann, R.

    2014-06-01

    We report on a comprehensive study of the laser ablation threshold of transparent conductive oxide thin films. The ablation threshold is determined for both indium tin oxide and gallium zinc oxide as a function of film thickness and for different laser wavelengths. By using a pulsed diode pumped solid state laser at 1064 nm, 532 nm, 355 nm and 266 nm, respectively, the relationship between optical absorption length and film thickness is studied. We find that the ablation threshold decreases with increasing film thickness in a regime where the absorption length is larger than the film thickness. In turn, the ablation threshold increases in case the absorption length is smaller than the film thickness. In particular, we observe a minimum of the ablation threshold in a region where the film thickness is comparable to the absorption length. To the best of our knowledge, this behaviour previously predicted for thin metal films, has been unreported for all three regimes in case of transparent conductive oxides, yet. For industrial laser scribing processes, these results imply that the efficiency can be optimized by using a laser where the optical absorption length is close to the film thickness.

  6. Adsorption and Reaction of Methanol on Thin-film Cerium Oxide

    SciTech Connect

    Mullins,D.; Robbins, M.; Zhou, J.

    2006-01-01

    Formaldehyde adsorption and reaction have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The formaldehyde behavior was examined as a function of temperature, exposure and Ce oxidation state. Formaldehyde chemisorbs on fully oxidized CeO{sub 2} as dioxymethylene, CH{sub 2}O{sub 2}. The dioxymethylene decomposes and desorbs as formaldehyde between 200 K and 400 K. No other products are formed. On reduced ceria, formaldehyde also adsorbs as dioxymethylene. In addition to the formaldehyde desorption between 200 K and 400 K, a more strongly bound form of dioxymethylene is formed that produces formaldehyde at 440 K. Above 400 K, some of the dioxymethylene reacts to form formate and methoxy on the surface. These species decompose to produce H{sub 2}, CO and CH{sub 2}O above 500 K.

  7. Adsorption and Reaction of Formaldehyde on Thin-film Cerium Oxide

    SciTech Connect

    Zhou,J.; Mullins, D.

    2006-01-01

    Formaldehyde adsorption and reaction have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The formaldehyde behavior was examined as a function of temperature, exposure and Ce oxidation state. Formaldehyde chemisorbs on fully oxidized CeO{sub 2} as dioxymethylene, CH{sub 2}O{sub 2}. The dioxymethylene decomposes and desorbs as formaldehyde between 200 K and 400 K. No other products are formed. On reduced ceria, formaldehyde also adsorbs as dioxymethylene. In addition to the formaldehyde desorption between 200 K and 400 K, a more strongly bound form of dioxymethylene is formed that produces formaldehyde at 440 K. Above 400 K, some of the dioxymethylene reacts to form formate and methoxy on the surface. These species decompose to produce H{sub 2}, CO and CH{sub 2}O above 500 K.

  8. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  9. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  10. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  11. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P.; Reddy, V. R.; Ganesan, V.

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  12. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-01

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu2O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films

  13. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  14. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  15. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications. PMID:26039187

  16. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  17. The growth and evolution of thin oxide films on delta-plutonium surfaces

    SciTech Connect

    Garcia Flores, Harry G; Pugmire, David L

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  18. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    NASA Astrophysics Data System (ADS)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  19. Ionic and electrochemical phenomena induced by structural and chemical defects in oxide thin films

    NASA Astrophysics Data System (ADS)

    Aruta, Carmela

    Interactions at the surfaces/interfaces between complex oxides and gaseous environment are fundamental for the efficiency of many environmental friendly systems and applications. Such interactions can be modified by the intricate interrelationship between microstructure and chemical substitution defects, being their role on functional properties, such as ionic conductivity and surface reaction rates, as particularly relevant as difficult to discriminate. New possibilities in thin film fabrication allow growth of oxide thin films with a more precise control of the structure and chemical stoichiometry, thus unveiling new perspectives in the study of electrochemical effects for physical functionalities, through nanoscale characterizations by complementary state-of-art techniques. As an example of interfacial structural defect effects, we will discuss the case of yttrium doped barium zirconate thin films, where the cation substitutions represent a viable mechanism, alternative to the formation of dislocations near the interface, to relieve the strain building up in the film growing on a highly mismatched substrate, thus providing fast transport pathways together with enhanced interface electrochemical reactivity. The effect of the chemical defects will be further presented in the case of samarium-doped ceria films with different doping concentration. We will explain the role of the trivalent doping on the conduction mechanism, i.e. proton or oxygen ion, which in turns may greatly influence the surface reactivity.

  20. Transient laser annealing of zinc oxide nanoparticle inks to fabricate zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Willemann, Michael

    Display technology, which relies exclusively on amorphous silicon as the active material for driver electronics, has reached multiple impasses that limit future progress. In order to deliver higher resolutions, higher refresh rates, new display technologies, and innovative form factors, driver electronics must transition to higher performance materials like amorphous oxide semiconductors (AOSs). Transient laser annealing offers an attractive means to maximize performance while minimizing thermal budget, making it compatible with flexible back plane materials and roll-to-roll processing. This research investigates the deposition and annealing of zinc oxide nanoparticle inks to form fully densified crystalline and amorphous zinc oxide films. Processing routes for nanoparticle annealing, including ligand removal, calcining, and excimer pulse laser sintering on the nanosecond time scale, will be introduced that minimize defect formation and suppress the anomalous n-conductivity which is a major challenge to zinc oxide processing. Resistivities as high as 6 x 107 O-cm have been demonstrated. Laser processing on longer millisecond time scales can control defect formation to produce ZnO films without extrinsic doping which have low resistivity for intrinsic oxides, in the range of 10-1 - 10-2 O-cm. Finally, a viable process for the production of backgated ZnO transistors with promising characteristics is presented and the future implications for AOSs and transient thermal processing will be discussed.

  1. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  2. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

    SciTech Connect

    Nonaka, Yusuke; Kurosawa, Yoichi; Komatsu, Yoshihiro; Ishihara, Noritaka; Oota, Masashi; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi; Yamauchi, Jun

    2014-04-28

    In–Ga–Zn oxide (IGZO) is a next-generation semiconductor material seen as an alternative to silicon. Despite the importance of the controllability of characteristics and the reliability of devices, defects in IGZO have not been fully understood. We investigated defects in IGZO thin films using electron spin resonance (ESR) spectroscopy. In as-sputtered IGZO thin films, we observed an ESR signal which had a g-value of g = 2.010, and the signal was found to disappear under thermal treatment. Annealing in a reductive atmosphere, such as N{sub 2} atmosphere, generated an ESR signal with g = 1.932 in IGZO thin films. The temperature dependence of the latter signal suggests that the signal is induced by delocalized unpaired electrons (i.e., conduction electrons). In fact, a comparison between the conductivity and ESR signal intensity revealed that the signal's intensity is related to the number of conduction electrons in the IGZO thin film. The signal's intensity did not increase with oxygen vacancy alone but also with increases in both oxygen vacancy and hydrogen concentration. In addition, first-principle calculation suggests that the conduction electrons in IGZO may be generated by defects that occur when hydrogen atoms are inserted into oxygen vacancies.

  3. Electrical and optical properties of sputtered amorphous vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Podraza, N. J.; Gauntt, B. D.; Motyka, M. A.; Dickey, E. C.; Horn, M. W.

    2012-04-01

    Amorphous vanadium oxide (VOx) is a component found in composite nanocrystalline VOx thin films. These types of composite films are used as thermistors in pulsed biased uncooled infrared imaging devices when containing face centered cubic vanadium monoxide phase crystallites, and substantial fractions of amorphous material in the composite are necessary to optimize device electrical properties. Similarly, optoelectronic devices exploiting the metal-to-semiconductor transition contain the room-temperature monoclinic or high-temperature (>68 °C) rutile vanadium dioxide phase. Thin films of VOx exhibiting the metal-to-semiconductor transition are typically polycrystalline or nanocrystalline, implying that significant amounts of disordered, amorphous material is present at grain boundaries or surrounding the crystallites and can impact the overall optical or electronic properties of the film. The performance of thin film material for either application depends on both the nature of the crystalline and amorphous components, and in this work we seek to isolate and study amorphous VOx. VOx thin films were deposited by pulsed dc reactive magnetron sputtering to produce amorphous materials with oxygen contents ≥2, which were characterized electrically by temperature dependent current-voltage measurements and optically characterized by spectroscopic ellipsometry. Film resistivity, thermal activation energy, and complex dielectric function spectra from 0.75 to 6.0 eV were used to identify the impact of microstructural variations including composition and density.

  4. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    SciTech Connect

    Li, Qin; Song, Zhong Xiao; Ma, Fei E-mail: liyhemail@gmail.com; Li, Yan Huai E-mail: liyhemail@gmail.com; Xu, Ke Wei

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  5. Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates

    NASA Astrophysics Data System (ADS)

    Tong, Guoxiang; Li, Yi; Wang, Feng; Huang, Yize; Fang, Baoying; Wang, Xiaohua; Zhu, Huiqun; Li, Liu; Shen, Yujian; Zheng, Qiuxin; Liang, Qian; Yan, Meng; Qin, Yuan; Ding, Jie

    2013-11-01

    By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 °C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ˜40% happened at 900-1250 nm region at room temperature. The change of optical transmittance at this region was ˜25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor-metal phase transition at ˜51 °C, the width of the hysteresis loop is ˜8 °C.

  6. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  7. Thin-film heterostructures based on oxides of copper and zinc obtained by RF magnetron sputtering in one vacuum cycle

    NASA Astrophysics Data System (ADS)

    Afanasjev, V.; Bazhan, M.; Klimenkov, B.; Mukhin, N.; Chigirev, D.

    2016-07-01

    Investigations of formation conditions of oxide heterostructures ZnO/CuO in the same vacuum cycle using RF magnetron sputtering of powder targets of zinc and copper oxides were carried out. The optical and electrical properties of the thin film structures were studied.

  8. Fatigue failure in thin-film polysilicon is due to subcriticalcracking within the oxide layer

    SciTech Connect

    Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2005-01-11

    It has been established that microelectromechanical systems (MEMS) created from polycrystalline silicon thin-films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a ''reaction-layer'' process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoes moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this Letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the '''reaction-layer'' mechanism. Recent advances in the design of microelectromechanical systems (MEMS) have increased the demand for more reliable microscale structures. Although silicon is an effective and widely used structural material at the microscale, it is very brittle. Consequently, reliability is a limiting factor for commercial and defense applications. Since the surface to volume ratio of these structural films is very large, classical models for failure modes in bulk materials cannot always be applied. For example, whereas bulk silicon is immune to cyclic fatigue failure thin micron-scale structural films of silicon appear to be highly susceptible. It is clear that at these size scales, surface effects may become dominant in controlling mechanical properties. The main reliability issues for MEMS are stiction, fatigue and wear. Fatigue is important in cases where devices are subjected to a large number of loading cycles with amplitudes below their (single-cycle) fracture stress, which may arise due to vibrations intentionally induced in the

  9. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  10. Nanostructures design by plasma afterglow-assisted oxidation of iron-copper thin films

    NASA Astrophysics Data System (ADS)

    Imam, A.; Boileau, A.; Gries, T.; Ghanbaja, J.; Mangin, D.; Hussein, K.; Sezen, H.; Amati, M.; Belmonte, T.

    2016-05-01

    Oxidizing thin films made of Fe-Cu alloy with an Ar-O2 micro-afterglow operated at atmospheric pressure shows remarkable growth processes. The presence of iron in copper up to about 50% leads to the synthesis of CuO nanostructures (nanowalls, nanotowers and nanowires). Nanotowers show the presence of an amorphous phase trapped between crystalline domains. Beyond 50%, Fe2O3 iron nanoblades are also found. CuO nanowires as small as 5 nm in diameter can be synthesized. Thanks to the presence of patterned domains induced by buckling, it was possible to show that the stress level decreases when the iron content in the alloy increases. Iron blades grow from the inner Fe2O3 layer through the overlying CuO if it is thin enough.

  11. Fast Responsive Gas Sensor of Vertically Aligned Fluorine-Doped Tin Oxide Nanorod Thin Film

    NASA Astrophysics Data System (ADS)

    Cho, Chan-Woo; Lee, Jong-Heun; Riu, Doh-Hyung; Kim, Chang-Yeoul

    2012-04-01

    We prepared fluorine-doped tin oxide (FTO) nanorod films and a conventional FTO thin film for the application of a semiconducting gas sensor by spray pyrolysis method. The lengths of FTO nanorods (FTON, 100 and 500 nm) were controlled by changing deposition times, and FTO thin film (FTOT) was also prepared as a reference. The gas sensitivity test shows FTON with long nanorods had higher sensitivity for both hydrogen and ethanol gases but slow response and recovery times, despite an advantage of the higher gas sensitivity. FTO nanorod film with short length about 100 nm showed relatively lower sensitivity, but fast gas response and recovery characteristics. The fast response and recovery for the analyte gases are attributed to the conductance of FTO nanorods, which is closely related to the diameter and length of nanorods.

  12. The solution growth route and characterization of electrochromic tungsten oxide thin films

    SciTech Connect

    Todorovski, Toni; Najdoski, Metodija

    2007-12-04

    Electrochromic tungsten oxide thin films were prepared by using an aqueous solution of Na{sub 2}WO{sub 4}.2H{sub 2}O and dimethyl sulfate. Various techniques were used for the characterization of the films such as X-ray diffraction, cyclic voltammetry, SEM analysis and VIS-spectroscopy. The thin film durability was tested in an aqueous solution of LiClO{sub 4} (0.1 mol/dm{sup 3}) for about 7000 cycles followed by cyclic voltammetry. No significant changes in the cyclic voltammograms were found, thus proving the high durability of the films. The optical transmittance spectra of coloured and bleached states showed significant change in the transmittance, which makes these films favorable for electrochromic devices.

  13. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

    PubMed

    Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

    2011-03-01

    Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel. PMID:21116548

  14. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    PubMed Central

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

  15. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    NASA Astrophysics Data System (ADS)

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

  16. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  17. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals.

    PubMed

    Shih, Chen Wei; Chin, Albert; Lu, Chun Fu; Su, Wei Fang

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

  18. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  19. Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient

    SciTech Connect

    Wang, Yaqin; Zhu, Junhao; Tang, Wu

    2014-05-26

    A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.

  20. Heterojunction thin films based on multifunctional metal oxides for photovoltaic application

    SciTech Connect

    Prabhu, M.; Soundararajan, N.; Ramachandran, K.; Marikkannan, M.; Mayandi, J.

    2014-04-24

    Metal oxides based multifunctional heterojunction thin films of ZnO/SnO{sub 2} and ZnO/SnO{sub 2}/CuO QDs were prepared by spin-coating technique. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The optical absorption studies revealed that the film thickness has considerable effect on the band gap values and is found to be in the range of 3.73–3.48 eV. The photoluminescence spectra showed several weak visible emission peaks related to the deep level defects (450-575 nm). Finally, the current density-voltage (J-V) characteristic of ZnO/SnO{sub 2}/CuO QDs (ZSCI) based heterojunction thin film coated on ITO is also reported.

  1. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    NASA Astrophysics Data System (ADS)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  2. Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers

    SciTech Connect

    Kekuda, Dhananjaya; Rao, K. Mohan; Tolpadi, Amita; Chu, C. W.

    2011-07-15

    Polycrystalline Indium Oxide (In{sub 2}O{sub 3}) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO{sub 2} served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

  3. Partial reduction of re-oxidation processing of Y-Ba-Cu-O sputtered thin films

    SciTech Connect

    Garzon, F.H.; Beery, J.G.; Wilde, D.K.; Raistrick, I.D.

    1989-01-01

    Thin films of Y--Ba--Cu--O were produced by rf sputtering of YBa{sub 2}Cu{sub 3}O{sub 7-x} ceramic targets, using a variety of plasma compositions, rf power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with T{sub c} values between 40--60 K, broad transition widths and semiconductor-like electrical behavior above T{sub c}. Subsequent annealing at 850{degree}C in an inert gas with a residual oxygen partial pressure of {le}10 ppM followed by an oxygen anneal produced high quality thin films: T{sub c} > 85 K with narrow transition widths. The structure and morphology of these films during reduction-oxidation processing were monitored using x-ray diffraction and electron microscopy. 8 refs., 4 figs.

  4. Multicomponent thin film molybdate catalysts for the selective oxidation of 1,3-butadiene

    SciTech Connect

    Zou, J.; Schrader, G.L.

    1996-07-01

    The selective oxidation of 1,3-butadiene was examined over single and multiphase NiMoO{sub 4}-MoO{sub 3} thin film catalysts prepared by reactive sputtering. Previous studies of precipitated catalysts have indicated that synergism occurs for these multicomponent materials: sputtered films behaved similarly but tended to be more active and selective. XRD, LRS, XRF, XPS, SEM, and TEM were used to characterize the {alpha}-MoO{sub 3} and {alpha}-NiMoO{sub 4} thin films; for most bilayer materials, an additional phase, {beta}-NiMoO{sub 4}, was present in an interfacial region. Selectivity for furan, 2(5H)-furanone, and maleic anhydride was enhanced by the preparation of the materials as layered films. 62 refs., 9 figs., 7 tabs.

  5. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  6. Negative Magnetoresistance of Indium Tin Oxide Nanoparticle Thin Films Grown by Chemical Thermolysis

    NASA Astrophysics Data System (ADS)

    Fujimoto, Akira; Yoshida, Kota; Higaki, Tomohiro; Kimura, Yuta; Nakamoto, Masami; Kashiwagi, Yukiyasu; Yamamoto, Mari; Saitoh, Masashi; Ohno, Toshinobu; Furuta, Shinya

    2013-02-01

    To clarify the electrical transport properties of nanostructured thin films, tin-doped indium oxide (ITO) nanoparticle (NP) solution-processed films were fabricated. An air-atmosphere, simple chemical thermolysis method was used to grow the ITO NPs, and the structural and electrical properties of spin-coated granular ITO NP films were investigated. X-ray diffraction measurements showed clear observation of the cubic indium oxide (222) diffraction peak, and films with a smaller Sn concentration were shown to have a better crystalline quality. We further explored the physical origin of the sign of the magnetoresistance (MR) in the variable-range hopping (VRH) region. A negative MR under a magnetic field perpendicular to the film surface increases with decreasing Sn concentration, and these results can be explained by the forward interference model in the VRH region. A larger negative MR is attributed to longer localization and hopping lengths, and better crystallinity. Thus, ITO NP thin films produced by this method are attractive candidates for oxide-based diluted magnetic semiconductors and other electronic devices.

  7. Growth, microstructure and supercapacitive performance of copper oxide thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Purusottam Reddy, B.; Sivajee Ganesh, K.; Hussain, O. M.

    2016-02-01

    The supercapacitive performance of copper oxide thin film electrodes mainly relies on micro structure, phase, surface area and conductivity which in turn depend on the deposition technique and process parameters during growth. In the present study, thin films of copper oxide were prepared by RF magnetron sputtering on stainless steel substrates keeping O2-to-Ar ratio at 1:11 and RF power at 250 W and varying the substrate temperature. The microstructure and the induced phase changes in copper oxide films are observed to be strongly influenced by the substrate temperature since the relaxation time, surface diffusion and surface structural changes are thermally activated. The XRD and Raman studies reveal that the films deposited at low substrate temperature (<200 °C) exhibited CuO, while the films deposited at substrate temperature >200 °C exhibited Cu2O phase. The films prepared at 350 °C exhibited reflections correspond to cubic Cu2O with predominant (111) orientation. The estimated maximum grain size from AFM studies was 72 nm with surface roughness of 51 nm. These films exhibited a highest areal capacitance of 30 mF cm-2 at scan rate of 5 mV s-1. The galvanostatic charge-discharge studies demonstrated high specific capacitance of 908 F g-1 at 0.5 mA cm-2 current density with 80 % of its initial capacity retention even after 1000 cycles.

  8. A facile process to prepare copper oxide thin films as solar selective absorbers

    NASA Astrophysics Data System (ADS)

    Xiao, Xiudi; Miao, Lei; Xu, Gang; Lu, Limei; Su, Zhanmin; Wang, Ning; Tanemura, Sakae

    2011-10-01

    Copper oxide thin films as solar selective absorbers were conveniently prepared by one-step chemical conversion method. X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis-NIR spectra and Fourier transform infrared (FTIR) spectra were employed to characterize the composition, structure and optical properties of thin films. The results indicated that the composition, structure and optical properties of thin films were greatly influenced by reaction temperature, time and concentration of NaOH. When reaction temperature was fixed at 40 °C, the as-prepared films consist of pure cubic Cu 2O. The surface morphology of thin films was changed from square-like structure (reaction time ≤ 25 min) to porous belt-like structure (reaction time ≥ 30 min) with the elongation of reaction time. While for thin films prepared at 60 °C and 80 °C, single Cu 2O was observed after 5 min reaction. When reaction time is longer than 5 min, CuO appears and the content of CuO is increasing with the elongation of reaction time. With the increase of reaction temperature, the belt-like structure was easily formed for 60 °C/10 min and 80 °C/5 min. Decreasing concentration of NaOH also could result in the formation of CuO and porous belt-like structure. Simultaneously, the film thickness is increasing with the increase of reaction time, temperature and concentration. Films containing CuO with belt-like structure exhibited high absorptance (>0.9), and the emissivity of films increased with elongation of reaction time. Combination of the composition, structure and optical properties, it can be deduced that the porous belt-like structure like as a light trap can greatly enhance absorbance ( α), while the composition, thickness and roughness of thin films can greatly influence the emissivity ( ɛ). The highest photo-thermal conversion efficiency was up to 0.86 ( α/ ɛ = 0.94/0.08) for thin films prepared at 80 °C/5 min, which proved that the CuO x thin films can be served as

  9. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  10. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    DOE PAGESBeta

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilizedmore » grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less

  11. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, N. Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-14

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E{sub a} = 21.6 kJ/mol and A{sub o} = 2.3 × 10{sup −17} m{sup 2}/s for Au-1 vol. % ZnO and E{sub a} = 12.7 kJ/mol and A{sub o} = 3.1 × 10{sup −18} m{sup 2}/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  12. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Argibay, N.; Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-01

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea = 12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  13. Structural and optical studies of 100 MeV Au irradiated thin films of tin oxide

    NASA Astrophysics Data System (ADS)

    Jaiswal, Manoj Kumar; Kanjilal, D.; Kumar, Rajesh

    2013-11-01

    Thin films of tin(IV) oxide (SnO2) of 100 nm thickness were grown on silicon (1 0 0) matrices by electron beam evaporation deposition technique under high vacuum. The thicknesses of these films were monitored by piezo-sensor attached to the deposition chamber. Nanocrystallinity is achieved in these thin films by 100 MeV Au8+ using 1 pnA current at normal incidence with ion fluences varying from 1 × 1011 ions/cm2 to 5 × 1013 ions/cm2. Swift Heavy Ion beam irradiation was carried out by using 15 UD Pelletron Accelerator at IUAC, New Delhi, India. Optical studies of pristine and ion irradiated thin films were characterized by UV-Visible spectroscopy and Fourier Transform Infrared (FTIR) spectroscopy. Prominent peak at 610 cm-1 in FTIR spectrum confirmed the O-Sn-O bonding of tin(IV) oxide. For Surface topographical studies and grain size calculations, these films were characterized by Atomic Force Microscope (AFM) using Nanoscope III-A. Crystallinity and phase transformation due to irradiation of pristine and irradiated films were characterized by Glancing Angle X-ray Diffraction (GAXRD) using Brucker-D8 advance model. GAXRD results show improvement in crystallinity and phase transformation due to swift heavy ion irradiation. Grain size distribution was verified by AFM and GAXRD results. Swift heavy ion induced modifications in thin films of SnO2 were confirmed by the presence of prominent peaks at 2θ values of 30.65°, 32.045°, 43.94°, 44.96° and 52.36° in GAXRD spectrum.

  14. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Mitoma, Nobuhiko; Miyanaga, Miki; Awata, Hideaki; Nabatame, Toshihide; Tsukagoshi, Kazuhito

    2015-09-01

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm2/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  15. Effects of microstructure and oxidation state of multi-valent vanadium oxide thin films for use in infrared microbolometers

    NASA Astrophysics Data System (ADS)

    Motyka, Michael Allen

    Uncooled, resistive bolometry has been a widely used method to detect infrared radiation for several years. The thermistor in the material heats up upon absorbing infrared radiation. The resistivity (rho) of this material is lowered by the heat and is detected by a readout circuitry. Improvement of device performance may arise from improving the temperature coefficient of resistivity (TCR). For several years, vanadium oxide (VO x) thin films have been used as the thermally active material in these bolometer devices due to the somewhat controllable rho and high TCR nature. Prior research has shown that often VOx thin films with more desirable electrical properties exhibit a nanocomposite structure consisting of highly defective nanocrystalline domains of face-centered cubic VO x (0.8 ≤ x ≤ 1.3) phase embedded within an amorphous matrix of VOx with x > 2. Attempts were made to fabricate reference materials of each of these constituents of the nanocomposite by means of reactive pulsed-DC magnetron sputtering in order to obtain a reference database of the electrical properties and the optical properties obtained via spectroscopic ellipsometry (SE). In doing so, it has been discovered that many deposition parameters such as oxygen flow rates, substrate temperature, substrate bias, and the substrate surface, itself, affect the resulting VOx thin film growth and nucleation. The strong substrate dependence of these films dictates the crystallinity, overall phase, and structural evolution of the VOx thin films. VOx thin films grown on single crystal Al2O 3 have exhibited higher degrees of crystallinity and predominately V 2O3 like in structure, which lead to undesirably low TCR magnitudes (0.09 -- 0.59 --%/K). VOx thin films grown on single crystal MgO have been shown to have different results than that of the VOx on Al2O3 as the TCR is much higher, and thus more desirable (2.23- 3.59 --%/K). These films on MgO were highly disordered and had the highest values of TCR

  16. Structural changes in graphene oxide thin film by electron-beam irradiation

    NASA Astrophysics Data System (ADS)

    Tyagi, Chetna; Lakshmi, G. B. V. S.; Kumar, Sunil; Tripathi, Ambuj; Avasthi, D. K.

    2016-07-01

    Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 1011 to 2 × 1013 e-/cm2. Our studies using X-ray diffraction, Raman microscopy and UV-Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

  17. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    NASA Astrophysics Data System (ADS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn3O4, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20-30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 - 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9-10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  18. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  19. Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

    NASA Astrophysics Data System (ADS)

    Kim, Se Jin

    Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

  20. Morphology, structural and optical properties of iron oxide thin film photoanodes in photoelectrochemical cell: Effect of electrochemical oxidation

    NASA Astrophysics Data System (ADS)

    Maabong, Kelebogile; Machatine, Augusto G.; Hu, Yelin; Braun, Artur; Nambala, Fred J.; Diale, Mmantsae

    2016-01-01

    Hematite (α-Fe2O3) is a promising semiconductor as photoanode in solar hydrogen production from photoelectrolysis of water due to its appropriate band gap, low cost and high electrochemical stability in aqueous caustic electrolytes. Operation of such photoanode in a biased photoelectrochemical cell constitutes an anodization with consequent redox reactions at the electrode surface. α-Fe2O3 thin film photoanodes were prepared by simple and inexpensive dip coating method on fluorine doped tin oxide (FTO) glass substrate, annealed in air at 500 °C for 2 h, then electrochemically oxidized (anodized) in 1 M KOH at 500 mV for 1 min in dark and light conditions. Changes in structural properties and morphology of α-Fe2O3 nanoparticles films were investigated by XRD, Raman spectroscopy and a high resolution FE-SEM. The average grain size was observed to increase from ~57 nm for pristine samples to 73 and 77 nm for anodized samples in dark and light respectively. Broadening and red shift in Raman spectra in anodized samples may be attributed to lattice expansion upon oxidation. The UV-visible measurements revealed enhanced absorption in the photoanodes after the treatment. The findings suggest that the anodization of the photoelectrode in a biased cell causes not only changes of the molecular structure at the surface, but also changes in the crystallographic structure which can be detected with x-ray diffractometry.

  1. Chemical and optical properties of thermally evaporated manganese oxide thin films

    SciTech Connect

    Al-Kuhaili, M. F.

    2006-09-15

    Manganese oxide thin films were deposited using thermal evaporation from a tungsten boat. Films were deposited under an oxygen atmosphere, and the effects of thickness, substrate temperature, and deposition rate on their properties were investigated. The chemical properties of the films were studied using x-ray photoelectron spectroscopy and x-ray fluorescence. The optical properties were determined from normal-incidence transmittance and reflectance. Based on the chemical and optical characterizations, the optimum conditions for the deposition of the films were investigated. Subsequently, the optical properties (refractive index, extinction coefficient, and band gap) of these films were determined.

  2. Synthesis and characterization of ultra-small superparamagnetic iron oxide nanoparticles thinly coated with silica

    NASA Astrophysics Data System (ADS)

    Bumb, A.; Brechbiel, M. W.; Choyke, P. L.; Fugger, L.; Eggeman, A.; Prabhakaran, D.; Hutchinson, J.; Dobson, P. J.

    2008-08-01

    Ultra-small superparamagnetic iron oxide nanoparticles were synthesized by co-precipitation of iron chloride salts with ammonia and then encapsulated with thin (~2 nm) layers of silica. The particles have been characterized for size, diffraction pattern, surface charge, and magnetic properties. This rapid and economical synthesis has a number of industrial applications; however, the silica-coated particles have been optimized for use in medical applications such as magnetic resonance contrast agents and biosensors, and in DNA capturing, bioseparation and enzyme immobilization.

  3. Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Koide, Hirotaka; Nagao, Yuki; Koumoto, Kunihito; Takasaki, Yuka; Umemura, Tomonari; Kato, Takeharu; Ikuhara, Yuichi; Ohta, Hiromichi

    2010-11-01

    To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases but then gradually decreases as Vg increases, clearly suggesting the antiparabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

  4. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    SciTech Connect

    Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.; Hussain, A. M.; Hussain, M. M.

    2013-11-25

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  5. Green processing of metal oxide core-shell nanoparticles as low-temperature dielectrics in organic thin-film transistors.

    PubMed

    Portilla, Luis; Etschel, Sebastian H; Tykwinski, Rik R; Halik, Marcus

    2015-10-21

    TiO2 , Fe3 O4, AlOx , ITO (indium tin oxide), and CeO2 nanoparticles are tailored to exhibit excellent dispersability in deionized water and alcohols. The latter provides an ecofriendly solution for processing metal oxide nanoparticles at a neutral pH. Water-processed dielectrics from the metal oxide nanoparticles are incorporated into organic thin-film transistors fabricated on rigid and flexible substrates. PMID:26308740

  6. Study of Ferromagnetic and Field Effect Properties of Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Xia, Daxue

    Spintronics (spin transport electronics), in which both spm and charge of carriers are utilized for information processing, is perceived to be a candidate to extend and possibly to become the next-generation electronics. Its advantages include nonvolatility (data retention without electrical power), lower energy consumption, faster processing speed, and higher integration densities in comparison with the current semiconductor devices relying solely on electron charge. To realize a spin-field effect transistor, two respects are prerequisite. On the one hand, the mechanism of ferromagnetism should be addressed before one could prepare magnetic semiconductor films in a controllable way. On the other hand, excellent field effect properties should be sought through a convenient and low-cost strategy for manufacturing future nano-scale spintronic devices. This thesis is comprised of two parts. Firstly, it deals with the synthesis, characterization, and magnetism of transition-metal-doped or un-doped zinc oxide (ZnO) thin films. Secondly, it focuses on the field effect properties of solution processable ZnO thin films, which are not only of great interest for current charge-carrier based thin film transistors, but also of fundamental importance in future spin-based transistors. A facile spin-coating technique has been developed to fabricate ZnO thin films. Even without magnetic element doping, the film is found to show room temperature ferromagnetism. A broad series of advanced microscopic and spectroscopic techniques are utilized to characterize the thin films properties. Oxygen vacancy defects are tentatively attributed to the observed ferromagnetism. Following the similar method, Ga doped or Ga, Co co-doped ZnO thin films are prepared. The ferromagnetism is enhanced with Ga doping, providing more carriers. It is discovered that room temperature ferromagnetism can exist in both highly conductive regime and the less conductive or near insulating regime. Transition metal

  7. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  8. A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

    NASA Astrophysics Data System (ADS)

    Adelifard, Mehdi; Darudi, Hosein

    2016-07-01

    There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

  9. Au/SiO{sub x} composite thin film as catalyst for solvent-free hydrocarbon oxidation

    SciTech Connect

    Han, Xiao; Huang, Hui; Zhang, Hengchao; Zhang, Xing; Li, Haitao; Liu, Ruihua; Liu, Yang Kang, Zhenhui

    2013-10-15

    Graphical abstract: Au/SiO{sub x} composite thin film possesses high catalytic activity and stability for selective oxidation of cis-cyclooctene. - Highlights: • Au/SiO{sub x} composite thin film was synthesized by a facile and efficient chemical approach. • The Au/SiO{sub x} composite thin film exhibits high catalytic ability for the selective oxidation. • The Au/SiO{sub x} composite thin film possesses high structural and catalytic stability. - Abstract: We report a facile and efficient chemical approach for the controllable preparation of Au/SiO{sub x} composite thin film using silicon quantum dots as SiO{sub x} sources. Au/SiO{sub x} composite thin film exhibits high catalytic activity (65.04% conversion based on cis-cyclooctene and 78.34% selectivity for 2-hydroxycyclooctanone) and stability for selective oxidation of cis-cyclooctene in the absence of solvent using TBHP as radical initiator and oxygen (in the air) as oxidant at 80 °C.

  10. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  11. Electrochromic properties of vanadium oxide thin films prepared by PSPT: Effect of substrate temperature

    NASA Astrophysics Data System (ADS)

    Patil, C. E.; Jadhav, P. R.; Tarwal, N. L.; Deshmukh, H. P.; Karanjakar, M. M.; Wali, A. A.; Patil, P. S.

    2013-06-01

    Electrochromic vanadium oxide (V2O5) thin films were deposited onto glass and fluorine doped tin oxide (FTO) coated glass substrates from methanolic vanadium chloride solution by pulsed spray pyrolysis technique (PSPT). The films were synthesized at different substrate temperatures ranging from 350°C-450°C with a temperature step of 50°C. The structural, morphological, optical and electrochromic properties of the synthesized films were investigated. The films were polycrystalline with tetragonal crystal structure. Scanning electron microscopy reveals compact morphology at high temperature. All films exhibited cathodic electrochromism in lithium containing electrolyte (0.5 M LiClO4 + Propylene Carbonate). Maximum coloration efficiency (CE) 15.16 cm2C-1, was observed for the films deposited at 350°C.

  12. Electrochemical and electrochromic properties of niobium oxide thin films fabricated by pulsed laser deposition

    SciTech Connect

    Fu, Z.W.; Kong, J.J.; Qin, Q.Z.

    1999-10-01

    Niobium oxide thin films have been successfully fabricated on the indium-tin oxide coated glasses by pulsed laser deposition in an O{sub 3}/O{sub 2} gas mixture. Films are characterized by X-ray diffraction and Raman spectrometry. Electrochemical and electrochromic properties of Nb{sub 2}O{sub 5} films are examined by cyclic voltammogram and potential step coupled with an in situ charge-coupled device spectrophotometer. The unique characteristics of absorption spectra of Nb{sub 2}O{sub 5} films are observed for the first time, and the optical absorption from the trapped electrons in the surface states plays an important role in the electrochromic phenomenon.

  13. Optical constants of amorphous, transparent titanium-doped tungsten oxide thin films.

    PubMed

    Ramana, C V; Baghmar, Gaurav; Rubio, Ernesto J; Hernandez, Manuel J

    2013-06-12

    We report on the optical constants and their dispersion profiles determined from spectroscopic ellipsometry (SE) analysis of the 20%-titanium (Ti) doped of tungsten oxide (WO3) thin films grown by sputter-deposition. The Ti-doped WO3 films grown in a wide range of temperatures (25-500 °C) are amorphous and optically transparent. SE data indicates that there is no significant interdiffusion at the film-substrate interface for a W-Ti oxide film growth of ~90 nm. The index refraction (n) at λ = 550 nm vary in the range of 2.17-2.31 with a gradual increase in growth temperature. A correlation between the growth conditions and optical constants is discussed. PMID:23682744

  14. Bismuth Oxide Thin Films Deposited on Silicon Through Pulsed Laser Ablation, for Infrared Detectors

    NASA Astrophysics Data System (ADS)

    Condurache-Bota, Simona; Constantinescu, Catalin; Tigau, Nicolae; Praisler, Mirela

    2016-12-01

    Infrared detectors are used in many human activities, from industry to military, telecommunications, environmental studies and even medicine. Bismuth oxide thin films have proved their potential for optoelectronic applications, but their uses as infrared sensors have not been thoroughly studied so far. In this paper, pulsed laser ablation of pure bismuth targets within a controlled oxygen atmosphere is proposed for the deposition of bismuth oxide films on Si (100) substrates. Crystalline films were obtained, whose uniformity depends on the deposition conditions (number of laser pulses and the use of a radio-frequency (RF) discharge of the oxygen inside the deposition chamber). The optical analysis proved that the refractive index of the films is higher than 3 and that their optical bandgap is around 1eV, recommending them for infrared applications.

  15. Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications

    SciTech Connect

    Shaik, Ummar Pasha; Krishna, M. Ghanashyam

    2014-04-24

    Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

  16. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  17. Single dominant distribution of Ge nanogranule embedded in Al oxide thin film

    SciTech Connect

    Abe, Seishi; Ohnuma, Shigehiro; Ohnuma, Masato; Ping, D. H.

    2008-11-15

    This paper investigates size distribution of Ge nanogranules embedded in Al oxide thin film prepared by rf reactive sputtering method. It is found from the results of x-ray diffraction and small angle x-ray diffraction spectroscopy that their mean sizes distribute bimodally or single dominantly with respect to sputtering process parameter of additional oxygen ratio in Ar and Ge concentrations. Compositional plane of these distribution types reveals that single dominant distribution appears along the line of stoichiometric composition of Al{sub 2}O{sub 3}, and deviation from stoichiometry results in bimodal distribution. Thus, size uniformity of Ge nanogranules seems to be enhanced when the Al oxide matrix forms stoichiometric composition.

  18. Preparation and characteristics of vanadium oxide thin films by controlling the sputtering voltage

    NASA Astrophysics Data System (ADS)

    Wei, Xiongbang; Li, Shibin; Gou, Jun; Dong, Xiang; Yang, Xiaohui; Li, Weizhi; Wang, Tao; Wu, Zhiming; Jiang, Yadong; Chen, Zhi

    2014-06-01

    Influence of sputtering voltage on the deposition process and characteristics of vanadium oxide thin films prepared by reactive DC magnetron sputtering is investigated. The target surface cleaning is controlled by adjusting the sputtering voltage. During the sputtering process, the sputtering voltage increases faster with larger O2 gas flow rate. The sputtering voltage is easy to be stable with larger sputtering voltage. The measured sputtering voltage is correlated to the ion induced secondary electron emission (ISEE) coefficient of the target material. The ISEE coefficient of the oxidized vanadium target surface is lower than the ISEE coefficient of the vanadium metal. The semiconductor to metal (S-M) phase transition temperature decreases with the sputtering voltage, leading to the lower the corresponding temperature of the maximum temperature coefficient of resistance (TCR). By this way, O/V ratio, R, and TCR of VOx films can be controlled by adjusting the sputtering voltage.

  19. Self-heating induced instability of oxide thin film transistors under dynamic stress

    NASA Astrophysics Data System (ADS)

    Kise, Kahori; Fujii, Mami N.; Urakawa, Satoshi; Yamazaki, Haruka; Kawashima, Emi; Tomai, Shigekazu; Yano, Koki; Wang, Dapeng; Furuta, Mamoru; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2016-01-01

    Degradation caused by Joule heating of transparent amorphous oxide semiconductor thin-film transistors (TFTs) is an important issue for display technology. Deep understanding of the mechanism of self-heating degradation generated by driving pulse voltage will pave the way for the development of highly reliable flexible displays. In this work, by using a pseudo interval measurement method, we examined the relationship of the highest and the lowest heating temperature in pulse 1 cycle and frequency. These self-heating converged to a constant temperature under pulse voltage applied at 1 kHz. Moreover, the long-term reliability under positive-bias stress voltage at 1 kHz of low converged temperature condition was improved relative to that of the stress voltage at 10 Hz of dynamic temperature change condition. We discussed the degradation mechanism of oxide TFTs generated by pulse voltage, and clarified that the degradation was accelerated by thermionic emission which occurred at low frequency.

  20. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    DOE PAGESBeta

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; Hayes, J.; Moreno, K. A.; Wu, J. J.; Nikroo, A.; Alford, C. A.; Hamza, A. V.; Kucheyev, S. O.; et al

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsulemore » with a thin oxide layer will be discussed.« less

  1. Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

    PubMed Central

    Lee, Sung Keun; Ahn, Chi Won

    2014-01-01

    Whereas the atomic structure of surface of crystals is known to be distinct from that of bulk, experimental evidence for thickness-induced structural transitions in amorphous oxides is lacking. We report the NMR result for amorphous alumina with varying thickness from bulk up to 5 nm, revealing the nature of structural transitions near amorphous oxide surfaces/interfaces. The coordination environments in the confined amorphous alumina thin film are distinct from those of bulk, highlighted by a decrease in the fractions of high-energy clusters (and thus the degree of disorder) with thickness. The result implies that a wide range of variations in amorphous structures may be identified by controlling its dimensionality. PMID:24569515

  2. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  3. Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition

    SciTech Connect

    Huang Yanwei; Zhang Qun Li Guifeng; Yang Ming

    2009-05-15

    Transparent conductive oxide tungsten-doped tin oxide thin films were deposited on glass substrates from ceramic targets by the pulsed plasma deposition method. The structural, electrical and optical properties have been investigated as functions of tungsten doping content and oxygen partial pressure. The lowest resistivity of 2.1 x 10{sup -3} {omega}{center_dot}cm was reproducibly obtained, with carrier mobility of 30 cm{sup 2}V{sup -1}s{sup -1} and carrier concentration of 9.6 x 10{sup 19} cm{sup -3} at the oxygen partial pressure of 1.8 Pa. The average optical transmission was in excess of 80% in the visible region from 400 to 700 nm, with the optical band gap ranging from 3.91 to 4.02 eV.

  4. Electron-Stimulated Oxidation of Thin Water Films Adsorbed on TiO2(110)

    SciTech Connect

    Lane, Christopher D.; Petrik, Nikolay G.; Orlando, Thomas M.; Kimmel, Greg A.

    2007-11-08

    Electron-stimulated reactions in thin (< 3 monolayer, ML) water films adsorbed on TiO2(110) are investigated. For electron fluences less than ~1×1016 e-/cm2, irradiation with 100 eV electrons results in electron-stimulated desorption (ESD) of atomic and molecular hydrogen, but no measurable O2. The ESD leaves adsorbed hydroxyls which oxidize the TiO2(110) surface and change the post-irradiation TPD spectra of the remaining water in characteristic ways. The species remaining on the TiO2(110) after irradiation of adsorbed water films are apparently similar to those produced without irradiation by co-dosing water and O2. Annealing above ~600 K reduces the oxidized surfaces, and water TPD spectra characteristic of ion sputtered and annealed TiO2(110) are recovered. The rate of electron-stimulated “oxidation” of the water films is proportional to the coverage of water in the first layer for coverages less than 1 ML. However, higher coverages suppress this reaction. When thin water films are irradiated, the rate of electron-stimulated oxidation is independent of the initial oxygen vacancy concentration, as is the final oxidized state achieved at high electron fluences. To explain the results, we propose that electron excitation of water molecules adsorbed on Ti4+ sites leads to desorption of hydrogen atoms and leaves an OH adsorbed at the site. If hydroxyls are present in the bridging oxygen rows, these react with the OH’s on the Ti4+ sites to reform water and heal the oxygen vacancy associated with the bridging OH. Once the bridge bonded hydroxyls have been eliminated, further irradiation increases the concentration of OH’s in the Ti4+ rows leading to the creation of species which block sites in the Ti4+ rows, perhaps H2O2 and/or HO2.

  5. Multi-Walled Carbon Nanotube-Doped Tungsten Oxide Thin Films for Hydrogen Gas Sensing

    PubMed Central

    Wongchoosuk, Chatchawal; Wisitsoraat, Anurat; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Kerdcharoen, Teerakiat

    2010-01-01

    In this work we have fabricated hydrogen gas sensors based on undoped and 1 wt% multi-walled carbon nanotube (MWCNT)-doped tungsten oxide (WO3) thin films by means of the powder mixing and electron beam (E-beam) evaporation technique. Hydrogen sensing properties of the thin films have been investigated at different operating temperatures and gas concentrations ranging from 100 ppm to 50,000 ppm. The results indicate that the MWCNT-doped WO3 thin film exhibits high sensitivity and selectivity to hydrogen. Thus, MWCNT doping based on E-beam co-evaporation was shown to be an effective means of preparing hydrogen gas sensors with enhanced sensing and reduced operating temperatures. Creation of nanochannels and formation of p-n heterojunctions were proposed as the sensing mechanism underlying the enhanced hydrogen sensitivity of this hybridized gas sensor. To our best knowledge, this is the first report on a MWCNT-doped WO3 hydrogen sensor prepared by the E-beam method. PMID:22163623

  6. Analysis of indium zinc oxide thin films by laser-induced breakdown spectroscopy

    SciTech Connect

    Popescu, A. C.; Beldjilali, S.; Socol, G.; Mihailescu, I. N.; Craciun, V.; Hermann, J.

    2011-10-15

    We have performed spectroscopic analysis of the plasma generated by Nd:YAG ({lambda} = 266 nm) laser irradiation of thin indium zinc oxide films with variable In content deposited by combinatorial pulsed laser deposition on glass substrates. The samples were irradiated in 5 x 10{sup 4} Pa argon using laser pulses of 5 ns duration and 10 mJ energy. The plasma emission spectra were recorded with an Echelle spectrometer coupled to a gated detector with different delays with respect to the laser pulse. The relative concentrations of indium and zinc were evaluated by comparing the measured spectra to the spectral radiance computed for a plasma in local thermal equilibrium. Plasma temperature and electron density were deduced from the relative intensities and Stark broadening of spectral lines of atomic zinc. Analyses at different locations on the deposited thin films revealed that the In/(In + Zn) concentration ratio significantly varies over the sample surface, from 0.4 at the borders to about 0.5 in the center of the film. The results demonstrate that laser-induced breakdown spectroscopy allows for precise and fast characterization of thin films with variable composition.

  7. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    SciTech Connect

    Chowdhury, Farzana Aktar; Hossain, Mohammad Abul; Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe; Mohiuddin, Tariq; Boby, Monny Akter; Alam, Mohammad Sahabul

    2015-10-15

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW{sup −1}. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  8. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  9. Laser scribing of indium tin oxide (ITO) thin films deposited on various substrates for touch panels

    NASA Astrophysics Data System (ADS)

    Tseng, Shih-Feng; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Chiang, Donyau; Chen, Ming-Fei; Chou, Chang-Pin

    2010-12-01

    In this study, a Nd:YAG laser with wavelength of 1064 nm is used to scribe the indium tin oxide (ITO) thin films coated on three types of substrate materials, i.e. soda-lime glass, polycarbonate (PC), and cyclic-olefin-copolymer (COC) materials with thickness of 20 nm, 30 nm, and 20 nm, respectively. The effect of exposure time adjusted from 10 μs to 100 μs on the ablated mark width, depth, and electrical properties of the scribed film was investigated. The maximum laser power of 2.2 W was used to scribe these thin films. In addition, the surface morphology, surface reaction, surface roughness, optical properties, and electrical conductivity properties were measured by a scanning electron microscope, a three-dimensional confocal laser scanning microscope, an atomic force microscope, and a four-point probe. The measured results of surface morphology show that the residual ITO layer was produced on the scribed path with the laser exposure time at 10 μs and 20 μs. The better edge qualities of the scribed lines can be obtained when the exposure time extends from 30 μs to 60 μs. When the laser exposure time is longer than 60 μs, the partially burned areas of the scribed thin films on PC and COC substrates are observed. Moreover, the isolated line width and resistivity values increase when the laser exposure time increases.

  10. Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

    NASA Astrophysics Data System (ADS)

    Chowdhury, Farzana Aktar; Hossain, Mohammad Abul; Uchida, Koji; Tamura, Takahiro; Sugawa, Kosuke; Mochida, Tomoaki; Otsuki, Joe; Mohiuddin, Tariq; Boby, Monny Akter; Alam, Mohammad Sahabul

    2015-10-01

    This work deals with the synthesis, characterization, and application of carbon nanoparticles (CNP) adorned graphene oxide (GO) nanocomposite materials. Here we mainly focus on an emerging topic in modern research field presenting GO-CNP nanocomposite as a infrared (IR) radiation detector device. GO-CNP thin film devices were fabricated from liquid phase at ambient condition where no modifying treatments were necessary. It works with no cooling treatment and also for stationary objects. A sharp response of human body IR radiation was detected with time constants of 3 and 36 sec and radiation responsivity was 3 mAW-1. The current also rises for quite a long time before saturation. This work discusses state-of-the-art material developing technique based on near-infrared photon absorption and their use in field deployable instrument for real-world applications. GO-CNP-based thin solid composite films also offer its potentiality to be utilized as p-type absorber material in thin film solar cell, as well.

  11. Structural and optical properties of yttrium oxide thin films for planar waveguiding applications

    SciTech Connect

    Pearce, Stuart J.; Parker, Greg J.; Charlton, Martin D. B.; Wilkinson, James S.

    2010-11-15

    Thin films of yttrium oxide, Y{sub 2}O{sub 3}, were deposited by reactive sputtering and reactive evaporation to determine their suitability as a host for a rare earth doped planar waveguide upconversion laser. The optical properties, structure, and crystalline phase of the films were found to be dependent on the deposition method and process parameters. X-ray diffraction analysis on the ''as-deposited'' thin films revealed that the films vary from amorphous to highly crystalline with a small broad peak at 29 deg. corresponding to the <222> reflections of Y{sub 2}O{sub 3}. The samples with the polycrystalline structure had a stoichiometry close to bulk cubic Y{sub 2}O{sub 3}. Scanning electron microscopy imaging revealed a regular column structure confirming their crystalline nature. The thin film layers which allowed guiding in both visible and infrared regions had lower refractive indices, higher oxygen content, and a more amorphous structure. Higher oxygen pressures during the deposition lead to a more amorphous layer.

  12. Analysis on superhydrophobic silver decorated copper Oxide nanostructured thin films for SERS studies.

    PubMed

    Jayram, Naidu Dhanpal; Aishwarya, D; Sonia, S; Mangalaraj, D; Kumar, P Suresh; Rao, G Mohan

    2016-09-01

    The present work demonstrates the superhydrophobic and Surface Enhanced Raman Spectroscopy (SERS) active substrate performance of silver coated copper oxide (Ag@CuO) nanostructured thin films prepared by the SILAR process. Super hydrophobic substrates that combine super hydrophobic condensation effect and high enhancement ability of Ag@CuO nanoflowers are investigated for SERS studies. The possible growth mechanism for the formation of nanoflower arrays from nanospindles has been discussed. Morphology and crystallinity of the Ag@CuO thin films are confirmed using FESEM and XRD. The results obtained in the present study indicate that the as-deposited hydrophobic nanospindles structure converts to super hydrophobic nanoflower arrays on annealing at 200°C. The Ag@CuO super hydrophobic nanoflowers thin film based SERS substrates show highly enhanced Raman spectra with an EF value of 2.0×10(7) for (Rhodamine 6G) R6G, allowing a detection limit from a 10(-10)molL(-1) solution. The present study may provide a new perception in fabricating efficient super hydrophobic substrates for SERS, suggesting that the fabricated substrates are promising candidates for trace analysis of R6G dye and are expected to be widely used as highly sensitive SERS active substrates for various toxic dyes in the future. PMID:27294970

  13. Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films.

    PubMed

    Østreng, E; Sønsteby, H H; Øien, S; Nilsen, O; Fjellvåg, H

    2014-11-28

    Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)3 + H2O/O3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 °C, respectively. The crystal structures of NaO(t)Bu and KO(t)Bu were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8'' wafer scale. PMID:25265332

  14. Sensitivity and Response of Polyvinyl Alcohol/Tin Oxide Nanocomposite Multilayer Thin Film Sensors.

    PubMed

    Sriram, G; Dhineshbabu, N R; Nithyavathy, N; Saminathan, K; Kaler, K V I S; Rajendran, V

    2016-01-01

    Nanocrystalline Tin Oxide (SnO₂) is Non-Stoichiometric in Nature with Functional Properties Suitable for gas sensing. In this study, SnO₂nanoparticles were prepared by the sol-gel technique, which were then characterised using X-ray diffraction. The nanoparticles showed tetragonal structure with an average crystallite size of 18 nm. The stretching and vibration modes of SnO₂were confirmed using Fourier transform infrared spectroscopy. The size of SnO₂ nanoparticles was determined using particle size analyser, which was found be 60 ± 10 nm on average. The surface morphology of the nanoparticles was investigated using scanning electron microscope, which showed irregular-sized agglomerated SnO₂nanostructures. In addition, primary particle size was evaluated using high-resolution transmission electron microscopy, which was found to be 50 nm on average. The polyvinyl alcohol/SnO₂ composite thin film was prepared on a glass substrate using spin-coating method. The values of band gap energy and electrical conductance of 13-layer thin film were found to be 2.96 eV and 0.0505 mho, respectively. Sulfur dioxide (SO₂) was suitably tailored to verify the sensor response over a concentration range of 10-70 ppm at room temperature. The performance, response, and recovery time of sensors were increased by increasing the layers of the thin film. PMID:27398561

  15. Electrochromism of niobium oxide thin films prepared by the sol-gel process

    SciTech Connect

    Ohtani, Bunsho; Iwai, Kunihiro; Nishimoto, Seiichi; Inui, Tomoyuki . Division of Energy and Hydrocarbon Chemistry)

    1994-09-01

    Thin layers of niobium oxide (NbO[sub x]) were accumulated by the sol-gel process, with the sol of NbO[sub x] in ethanol prepared by partial hydrolysis of commercial niobium (V) ethoxide, on glass plates coated with transparent conducting tin oxide. Characterization by X-ray diffraction, differential thermal analysis, and thermogravimetry revealed that the as-prepared film, consisting of fully hydrated amorphous niobium(V) oxide, undergoes dehydration into the partially hydrated form and, finally, crystalline niobium(V) oxide (Nb[sub 2]O[sub 5]) by calcination at the temperature up to 873 K. The films exhibited electrochromic (EC) properties; the reversible color change was observed between colorless and brown-black by alternating anodic and cathodic polarizations, respectively. Among the films used in this study the crystalline Nb[sub 2]O[sub 5] film showed the best EC properties and its spectral change, durability for repeated coloration-decoloration cycles, and retentivity of colored states, i.e., memory characteristics under open-circuit conditions were investigated in detail.

  16. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    SciTech Connect

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A.

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  17. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

    PubMed

    Yu, Xinge; Zhou, Nanjia; Smith, Jeremy; Lin, Hui; Stallings, Katie; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio

    2013-08-28

    We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance. PMID:23876148

  18. Oxidation behavior of arc evaporated Al-Cr-Si-N thin films

    SciTech Connect

    Tritremmel, Christian; Daniel, Rostislav; Mitterer, Christian; Mayrhofer, Paul H.; Lechthaler, Markus; Polcik, Peter

    2012-11-15

    The impact of Al and Si on the oxidation behavior of Al-Cr-(Si)-N thin films synthesized by arc evaporation of powder metallurgically prepared Al{sub x}Cr{sub 1-x} targets with x = Al/(Al + Cr) of 0.5, 0.6, and 0.7 and (Al{sub 0.5}Cr{sub 0.5}){sub 1-z}Si{sub z} targets with Si contents of z = 0.05, 0.1, and 0.2 in N{sub 2} atmosphere was studied in detail by means of differential scanning calorimetry, thermogravimetric analysis (TGA), x-ray diffraction, and Raman spectroscopy. Dynamical measurements in synthetic air (up to 1440 Degree-Sign C) revealed the highest onset temperature of pronounced oxidation for nitride coatings prepared from the Al{sub 0.4}Cr{sub 0.4}Si{sub 0.2} target. Isothermal TGA at 1100, 1200, 1250, and 1300 Degree-Sign C highlight the pronounced improvement of the oxidation resistance of Al{sub x}Cr{sub 1-x}N coatings by the addition of Si. The results show that Si promotes the formation of a dense coating morphology as well as a dense oxide scale when exposed to air.

  19. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors.

    PubMed

    Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun

    2016-08-12

    Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current-voltage and transient current-time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm(2) v(-1) s(-1)), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability. PMID:27363543

  20. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun

    2016-08-01

    Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current‑voltage and transient current‑time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm2 v‑1 s‑1), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability.

  1. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    NASA Astrophysics Data System (ADS)

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-08-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.

  2. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGESBeta

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a puremore » electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  3. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    PubMed Central

    Leng, X.; Bollinger, A. T.; Božović, I.

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  4. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.

    PubMed

    Leng, X; Bollinger, A T; Božović, I

    2016-01-01

    Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices. PMID:27506371

  5. Resistive Switching Characteristics of Tantalum Oxide Thin Film and Titanium Oxide Nanoparticles Hybrid Structure.

    PubMed

    Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Yoon, Tae-Sik; Choi, Young Jin; Kang, Chi Jung

    2015-11-01

    The fabrication of hybrid structure with TiO2 nanoparticle assembly and Ta2O5 thin film layer was demonstrated. The close-packed nanoparticles could influence the resistive switching behaviors due to the huge numbers of interface states and vacancies in the nanoparticle assembly. The device with hybrid structure presented the typical bipolar resistive switching characteristics in the structure of Ti/TiO2/Ta2O5/Au on SiO2/Si substrate. The set voltage was observed at -0.7 V, and the reset voltage occurred at (-)-0.7 V, which was smaller than that of Ta2O5 layer only. The electrical conduction mechanisms were the ohmic conduction at low resistance state (LRS) and the space charge limited conduction at high resistance state (HRS), respectively. The devices showed stable current ratio of LRS to HRS. The temperature dependent properties of the devices were also investigated. The device with nanoparticle assembly showed better electrical characteristics with low HRS current level and stable LRS current level with respect to the temperature. PMID:26726561

  6. Characterization of Tungsten Oxide Thin Films Produced by Spark Ablation for NO2 Gas Sensing.

    PubMed

    Isaac, Nishchay A; Valenti, Marco; Schmidt-Ott, Andreas; Biskos, George

    2016-02-17

    Tungsten oxides (WOx) thin films are currently used in electro-chromic devices, solar-cells and gas sensors as a result of their versatile and unique characteristics. In this study, we produce nanoparticulate WOx films by spark ablation and focused inertial deposition, and demonstrate their application for NO2 sensing. The primary particles in the as-deposited film samples are amorphous with sizes ranging from 10 to 15 nm. To crystallize the samples, the as-deposited films are annealed at 500 °C in air. This also caused the primary particles to grow to 30-50 nm by sintering. The morphologies and crystal structures of the resulting materials are studied using scanning and transmission electron microscopy and X-ray diffraction, whereas information on composition and oxidation states are determined by X-ray photoemission spectroscopy. The observed sensitivity of the resistance of the annealed films is ∼100 when exposed to 1 ppm of NO2 in air at 200 °C, which provides a considerable margin for employing them in gas sensors for measuring even lower concentrations. The films show a stable and repeatable response pattern. Considering the numerous advantages of spark ablation for fabricating nanoparticulate thin films, the results reported here provide a promising first step toward the production of high sensitivity and high accuracy sensors. PMID:26796099

  7. Growth of different phases of yttrium manganese oxide thin films by pulsed laser deposition

    SciTech Connect

    Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2012-06-05

    Various phases of yttrium manganese oxide (YMO) thin films have been synthesized on different substrates from a single target of h-YMnO{sub 3}. It is observed that the phase stability and crystallinity of YMO thin films depend on the substrate used and oxygen partial pressure (OPP). (110) oriented and polycrystalline growth of h-YMnO{sub 3} are observed on the Al{sub 2}O{sub 3} (0001) and NGO (110) substrates respectively, when grown in OPP {approx_equal} 10{sup -6} Torr. While for similar OPP value, growth of mixed phases (h-YMnO{sub 3} and o-YMn{sub 2}O{sub 5}) is observed on Si (001) substrate. Oriented growth of O-YMn{sub 2}O{sub 5} phase film on Si (001) substrate is observed first time, when deposited at OPP value of 225 and 350 mTorr. +3 and mixed oxidation states (+3 and +4) of Mn were confirmed by x-ray photoelectron spectroscopy in pure YMnO{sub 3} phase and YMn{sub 2}O{sub 5} phase respectively.

  8. Modulation of physical properties of oxide thin films by multiple fields

    NASA Astrophysics Data System (ADS)

    Hua-Li, Yang; Bao-Min, Wang; Xiao-Jian, Zhu; Jie, Shang; Bin, Chen; Run-Wei, Li

    2016-06-01

    Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal–insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices. Project supported by the State Key Project of Fundamental Research of China (Grant No. 2012CB933004), the National Natural Science Foundation of China (Grant Nos. 11474295, 51571208, 51525103, and 11274322), Overseas, Hong Kong & Macao Scholars Collaborated Researching Fund (Grant No. 51428201), the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201327), Ningbo Major Project for Science and Technology (Grant No. 2014B11011), Ningbo International Cooperation Projects (Grant Nos. 2012D10018 and 2014D10005), the Fund for Ningbo Science and Technology Innovation Team (Grant No. 2015B11001), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, and the Key Research Program of the Chinese Academy of Sciences (Grant No. KJZD-EW-M05).

  9. Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

    PubMed Central

    Dral, A. Petra; Dubbink, David; Nijland, Maarten; ten Elshof, Johan E.; Rijnders, Guus; Koster, Gertjan

    2014-01-01

    Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material. PMID:25549000

  10. X-ray absorption fine structure study of amorphous metal oxide thin films prepared by photochemical metalorganic deposition

    NASA Astrophysics Data System (ADS)

    Trudel, Simon; Daryl Crozier, E.; Gordon, Robert A.; Budnik, Peter S.; Hill, Ross H.

    2011-05-01

    The oxidation state and local geometry of the metal centers in amorphous thin films of Fe 2O 3 (Fe 3+ oxidation state), CoFe 2O 4 (Co 2+/Fe 3+ oxidation states), and Cr 2O 3 (Cr 3+ oxidation state) are determined using K edge X-ray absorption near-edge structure (XANES) spectroscopy and extended X-ray absorption fine structure (EXAFS) spectroscopy. The metal oxide thin films were prepared by the solid-state photochemical decomposition of the relevant metal 2-ethylhexanoates, spin cast as thin films. No peaks are observed in the X-ray diffraction patterns, indicating the metal oxides are X-ray amorphous. The oxidation state of the metals is determined from the edge position of the K absorption edges, and in the case of iron-containing samples, an analysis of the pre-edge peaks. In all cases, the EXAFS analysis indicates the first coordination shell consists of oxygen atoms in an octahedral geometry, with a second shell consisting of metals. No higher shells are observed beyond 3.5 Å for all samples, indicating the metal oxides are truly amorphous, consistent with X-ray diffraction results.

  11. Nano-indentation of single-layer optical oxide thin films grown by electron-beam deposition

    SciTech Connect

    Mehrotra, K.; Oliver, J. B.; Lambropoulos, J. C.

    2015-01-01

    Mechanical characterization of optical oxide thin films is performed using nano-indentation, and the results are explained based on the deposition conditions used. These oxide films are generally deposited to have a porous microstructure that optimizes laser induced damage thresholds, but changes in deposition conditions lead to varying degrees of porosity, density, and possibly the microstructure of the thin film. This can directly explain the differences in the mechanical properties of the film studied here and those reported in literature. Of the four single-layer thin films tested, alumina was observed to demonstrate the highest values of nano-indentation hardness and elastic modulus. This is likely a result of the dense microstructure of the thin film arising from the particular deposition conditions used.

  12. Fabrication and reducing gas detection characterization of highly-crystalline p-type zinc chromite oxide thin film

    NASA Astrophysics Data System (ADS)

    Liang, Yuan-Chang; Cheng, Yu-Ru; Hsia, Hao-Yuan; Chung, Cheng-Chia

    2016-02-01

    A p-type ternary ZnCr2O4 (ZCO) thin film was fabricated using rf sputtering on a sapphire substrate. Microstructural analyses revealed that the ZCO thin film had a high crystalline quality. Surface morphology investigations showed that the ZCO film had a rugged surface because of a distinct columnar grain feature. A gas sensor composed of the ZCO thin film exhibited marked acetone and NH3 gas-sensing responses. These acetone and NH3 gas-sensing responses reached an optimal value at operating temperatures of 250 °C and 300 °C, respectively. The ZCO sensor showed satisfactory repeatability when operated under dynamic conditions. The stable gas-sensing behavior of the p-type ZCO thin film to acetone and NH3 gases broadens the design of oxide gas sensors incorporated with this ternary oxide.

  13. Oxidatively Electrodeposited Thin-Film Transition Metal (Oxy)hydroxides as Oxygen Evolution Catalysts.

    PubMed

    Morales-Guio, Carlos G; Liardet, Laurent; Hu, Xile

    2016-07-20

    The electrolysis of water to produce hydrogen and oxygen is a simple and attractive approach to store renewable energies in the form of chemical fuels. The oxygen evolution reaction (OER) is a complex four-electron process that constitutes the most energy-inefficient step in water electrolysis. Here we describe a novel electrochemical method for the deposition of a family of thin-film transition metal (oxy)hydroxides as OER catalysts. The thin films have nanodomains of crystallinity with lattice spacing similar to those of double-layered hydroxides. The loadings of these thin-film catalysts were accurately determined with a resolution of below 1 μg cm(-2) using an electrochemical quartz microcrystal balance. The loading-activity relations for various catalysts were established using voltammetry and impedance spectroscopy. The thin-film catalysts have up to four types of loading-activity dependence due to film nucleation and growth as well as the resistance of the films. A zone of intrinsic activity has been identified for all of the catalysts where the mass-averaged activity remains constant while the loading is increased. According to their intrinsic activities, the metal oxides can be classified into three categories: NiOx, MnOx, and FeOx belong to category I, which is the least active; CoOx and CoNiOx belong to category II, which has medium activity; and FeNiOx, CoFeOx, and CoFeNiOx belong to category III, which is the most active. The high turnover frequencies of CoFeOx and CoFeNiOx at low overpotentials and the simple deposition method allow the fabrication of high-performance anode electrodes coated with these catalysts. In 1 M KOH and with the most active electrode, overpotentials as low as 240 and 270 mV are required to reach 10 and 100 mA cm(-2), respectively. PMID:27344954

  14. Sulfidation of electrodeposited microcrystalline/nanocrystalline cuprous oxide thin films for solar energy applications

    NASA Astrophysics Data System (ADS)

    Jayathilaka, K. M. D. C.; Kapaklis, V.; Siripala, W.; Jayanetti, J. K. D. S.

    2012-12-01

    Grain size of polycrystalline semiconductor thin films in solar cells is optimized to enhance the efficiency of solar cells. This paper reports results on an investigation carried out on electrodeposited n-type cuprous oxide (Cu2O) thin films on Ti substrates with small crystallites and sulfidation of them to produce a thin-film solar cell. During electrodeposition of Cu2O films, pH of an aqueous acetate bath was optimized to obtain films of grain size of about 100 nm, that were then used as templates to grow thicker n-type nanocrystalline Cu2O films. XRD and SEM analysis revealed that the films were of single phase and the substrates were well covered by the films. A junction of Cu2O/CuxS was formed by partially sulfiding the Cu2O films using an aqueous sodium sulfide solution. It was observed that the photovoltaic properties of nano Cu2O/CuxS heterojunction structures are better than micro Cu2O/CuxS heterojunction solar cells. Resulting Ti/nano Cu2O/CuxS/Au solar cell structure produced an energy conversion efficiency of 0.54%, Voc = 610 mV and Jsc = 3.4 mA cm-2, under AM 1.5 illumination. This is a significant improvement compared to the use of microcrystalline thin film Cu2O in the solar cell structure where the efficiency of the cell was limited to 0.11%. This improvement is attributed mainly to the increased film surface area associated with nanocrystalline Cu2O films.

  15. Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

    PubMed Central

    Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

    2015-01-01

    The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

  16. Mesoporous semiconducting oxide thin films with nanocrystalline walls: Synthesis, characterization, and applications

    NASA Astrophysics Data System (ADS)

    Frindell, Karen Lynne

    photoelectrochemical response were used in this study to establish criteria for optimization of the mesoporous titania films for photovoltaic cells, battery electrodes, photocatalysis, and sensors. Finally, several future directions were proposed based on extensions to the synthesis and applications detailed in this dissertation. These include the synthesis of mesoporous molybdenum oxide thin films and a new design for a photoelectrochemical biosensor.

  17. Oxide semiconductor thin-film transistors: a review of recent advances.

    PubMed

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  18. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

    NASA Astrophysics Data System (ADS)

    Hollinger, G.; Skheyta-Kabbani, R.; Gendry, M.

    1994-04-01

    The chemical composition of thin native oxide layers grown on GaAs and InAs by ultraviolet (UV)/ozone and thermal oxidation is investigated using x-ray-photoelectron spectroscopy. Core-level binding energies, core-level intensities, and valence-band spectra are compared with data for bulk crystalline binary or ternary As, In, and Ga oxides. The chemical compositions, which vary strongly from GaAs to InAs and from thermal to UV oxidation, appear to be controlled by both thermodynamic and kinetic factors. Only for GaAs thermal oxidation are the products predicted at thermodynamic equilibrium obtained. In all cases the native oxides can be described as single phase nonstoichiometric compounds and not as a macroscopic mixture of stoichiometric binary oxides.

  19. Effect of annealing temperature on the surface morphology and electrical properties of aluminum doped zinc oxide thin films prepared by sol-gel spin-coating method

    SciTech Connect

    Mamat, M. H.; Hashim, H.; Rusop, M.

    2008-05-20

    Aluminum doped zinc oxide thin films were prepared through sol gel and spin coating technique from zinc acetate dihydrate and aluminum nitrate nanohydrate in alcoholic solution. The electrical properties and surface morphology study are investigated for the thin films annealed at 350{approx}500 deg. C. Zinc oxide thin films deposited on glass and silicon substrates were characterized using electron microscopy (SEM) and current-voltage (I-V) measurement scanning for surface morphology and electrical properties study respectively. The SEM investigation shows that zinc oxide thin films are denser at higher annealing temperature. The result indicates electrical properties of aluminum doped zinc oxide thin films are improved with annealing temperatures. The resistivity of aluminum doped zinc oxide thin films are decreased with annealing temperature up to 500 deg. C.

  20. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  1. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    SciTech Connect

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  2. Electro deposition of cuprous oxide for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Shahrestani, Seyed Mohammad

    p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the

  3. Alloy perovskite oxide thin film as resistance switching non-volatile memory

    NASA Astrophysics Data System (ADS)

    Wang, Yudi

    Nonvolatile memory that permanently stores data is indispensable for computers and hand-held devices. In the last few years, resistance memory (RRAM) has emerged as an intriguing possibility that might replace flash memory one day, which is widely used in hand-held and portable-storage devices. The newest, rapidly growing interest in resistance switching is focused on semiconducting oxides and other related materials. In this dissertation, a novel material system for oxide RRAM that offers unique advantages over all the other existing oxide RRAM materials was designed and systematically investigated. The primary aim of these studies is to obtain a material system with the intrinsic property that allows electrically-induced metal-insulator transition, which is regulated by electron trapping and release at some interval sites. A series of alloy perovskite oxides thin film systems were designed by combining a wide band gap insulator (CaZrO3 or LaAlO3) and a conductor with a narrow bandwidth (SrRuO3 or LaNiO3 ), with the conductor concentration near the percolation threshold. These alloy perovskite oxides thin films are almost atomically flat without any defects, such as cracks or crosshatches, which is achieved using well controlled deposition conditions that favor domain-boundary relaxation of the large misfit strain. The bottom electrode is a single crystalline SrRuO 3 thin film, deposited on a single crystal substrate of SrTiO3 which exhibits high conductivity and ferromagnetic transition at ˜150K. The alloy thin films manifest an anisotropic percolation phenomenon: below a critical thickness a metallic conducting path always exists across the film thickness direction but not along the in-plane direction, which ensures electrical isolation between neighboring memory cells. These initially conducting films present excellent resistance switching properties: low switching voltages (1-3 V), high switching ratio (˜100), fast switching speed (50 ns), good switching

  4. Characterization of Oxide Thin Films and Interfaces Using Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Dhamdhere, Ajit

    Multifunctional oxide thin-films grown on silicon and several oxide substrates have been characterized using High Resolution (Scanning) Transmission Electron Microscopy (HRTEM), Energy-Dispersive X-ray Spectroscopy (EDX), and Electron Energy-Loss Spectroscopy (EELS). Oxide thin films grown on SrTiO3/Si pseudo-substrate showed the presence of amorphised SrTiO3 (STO) at the STO/Si interface. Oxide/oxide interfaces were observed to be atomically clean with very few defects. Al-doped SrTiO3 thin films grown on Si were of high crystalline quality. The Ti/O ratio estimated from EELS line scans revealed that substitution of Ti by Al created associated O vacancies. The strength of the crystal field in STO was measured using EELS, and decreased by ~1.0 eV as Ti4+ was substituted by Al3+. The damping of O-K EELS peaks confirmed the rise in oxygen vacancies. For Co-substituted STO films grown on Si, the EDS and EELS spectra across samples showed Co doping was quite random. The substitution of Ti4+ with Co3+ or Co2+ created associated oxygen vacancies for charge balance. Presence of oxygen vacancies was also confirmed by shift of Ti-L EELS peaks towards lower energy by ~0.4 eV. The crystal-field strength decreased by ~0.6 eV as Ti4+ was partially substituted by Co3+ or Co2+. Spinel Co3O4 thin films grown on MgAl2O 4 (110) were observed to have excellent crystalline quality. The structure of the Co3O4/MgAl2O4 interface was determined using HRTEM and image simulations. It was found that MgAl 2O4 substrate is terminated with Al and oxygen. Stacking faults and associated strain fields in spinel Co3O4 were found along [111], [001], and [113] using Geometrical Phase Analysis. NbO2 films on STO (111) were observed to be tetragonal with lattice parameter of 13.8 A and NbO films on LSAT (111) were observed to be cubic with lattice parameter of 4.26 A. HRTEM showed formation of high quality NbOx films and excellent coherent interface. HRTEM of SrAl4 on LAO (001) confirmed an island

  5. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization. PMID:25363298

  6. Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser

    NASA Astrophysics Data System (ADS)

    He, Shutong; Amoruso, Salvatore; Pang, Dongqing; Wang, Chingyue; Hu, Minglie

    2016-04-01

    We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu2O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, tw, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on tw is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu2O nanoparticles (size of ≈20 nm) and Cu2O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation.

  7. Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

    NASA Astrophysics Data System (ADS)

    Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

    2015-03-01

    Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

  8. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

    PubMed Central

    2013-01-01

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm2 V–1 s–1. We show that it is possible to solution-process these materials at low process temperature (225–200 °C yielding mobilities up to 4.4 cm2 V–1 s–1) and demonstrate a facile “ink-on-demand” process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  9. Chromatic annuli formation and sample oxidation on copper thin films by femtosecond laser.

    PubMed

    He, Shutong; Amoruso, Salvatore; Pang, Dongqing; Wang, Chingyue; Hu, Minglie

    2016-04-28

    We report an experimental investigation on the irradiation of copper thin films with high repetition rate femtosecond laser pulses (1040 nm, 50 MHz), in ambient air and liquid water. We observe a novel, striking phenomenon of chromatic copper oxides (CuO and Cu2O) annuli generation. The characteristic features of the chromatic copper oxide annuli are studied by exploiting micro-Raman spectroscopy, optical and scanning electron microscopies. In the case of irradiation in water, the seldom investigated effects of the immersion time, tw, after irradiation with a fixed number of pulses are analyzed, and an intriguing dependence of the color of the chromatic annuli on tw is observed. This remarkable behavior is explained by proposing an interpretation scenario addressing the various processes involved in the process. Our experimental findings show that Cu2O nanoparticles (size of ≈20 nm) and Cu2O nanocubes (nanocube edges of ≈30, ≈60 nm) can be effectively generated by exploiting high repetition rate laser-assisted oxidation. PMID:27131559

  10. Adsorption and Reaction of Methanethiol on Thin-Film Cerium Oxide

    SciTech Connect

    Mullins, David R; McDonald, Tom S

    2008-01-01

    The adsorption and reaction of methanethiol, CH{sub 3}SH, have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The behavior of the CH{sub 3}SH was examined as a function of the Ce oxidation state. CH{sub 3}SH weakly interacts with fully oxidized CeO{sub 2}(1 1 1) forming both chemisorbed CH{sub 3}SH and CH{sub 3}S + OH. OH forms through the reaction of the sulfhydrol H with the surface O. These species recombine and desorb near 180 K leaving the surface virtually clean. When the ceria is ca. 50% reduced, the chemisorbed CH{sub 3}SH desorbs near 150 K while the CH{sub 3}S + OH are stable to 400 K. These species react above 450 K to produce predominantly CH{sub 4} and CH{sub 3}SH. A small amount of CH{sub 2}O and water are also formed through reaction with the O in the ceria. Atomic S is left on the surface. S 2p, C 1s and O 1s soft X-ray photoelectron spectroscopy were used to identify the nature of the chemisorbed species and the adsorption site of the CH{sub 3}S or S.

  11. Adsorption and reaction of methanethiol on thin-film cerium oxide

    NASA Astrophysics Data System (ADS)

    Mullins, D. R.; McDonald, T. S.

    2008-03-01

    The adsorption and reaction of methanethiol, CH 3SH, have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The behavior of the CH 3SH was examined as a function of the Ce oxidation state. CH 3SH weakly interacts with fully oxidized CeO 2(1 1 1) forming both chemisorbed CH 3SH and CH 3S + OH. OH forms through the reaction of the sulfhydrol H with the surface O. These species recombine and desorb near 180 K leaving the surface virtually clean. When the ceria is ca. 50% reduced, the chemisorbed CH 3SH desorbs near 150 K while the CH 3S + OH are stable to 400 K. These species react above 450 K to produce predominantly CH 4 and CH 3SH. A small amount of CH 2O and water are also formed through reaction with the O in the ceria. Atomic S is left on the surface. S 2p, C 1s and O 1s soft X-ray photoelectron spectroscopy were used to identify the nature of the chemisorbed species and the adsorption site of the CH 3S or S.

  12. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.

    PubMed

    Banger, Kulbinder K; Peterson, Rebecca L; Mori, Kiyotaka; Yamashita, Yoshihisa; Leedham, Timothy; Sirringhaus, Henning

    2014-01-28

    Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium. PMID:24511184

  13. In situ oxidation studies on /001/ copper-nickel alloy thin films

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1977-01-01

    High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

  14. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  15. Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters

    NASA Astrophysics Data System (ADS)

    Ghaderi, M.; de Graaf, G.; Wolffenbuttel, R. F.

    2016-08-01

    This paper investigates the mechanical and optical properties of thin PECVD silicon-oxide layers for optical applications. The different deposition parameters in PECVD provide a promising tool to manipulate and control the film structure. Membranes for use in optical filters typically are of ~λ/4n thickness and should be slightly tensile for remaining flat, thus avoiding scattering. The effect of the thermal budget of the process on the mechanical characteristics of the deposited films was studied. Films with compressive stress ranging from  ‑100 to 0 MPa were deposited. Multiple thermal annealing cycles were applied to wafers and the in situ residual stress and ex situ optical properties were measured. The residual stress in the films was found to be highly temperature dependent. Annealing during the subsequent process steps results in tensile stress from 100 to 300 MPa in sub-micron thick PECVD silicon-oxide films. However, sub-100 nm thick PECVD silicon-oxide layers exhibit a lower dependence on the thermal annealing cycles, resulting in lower stress variations in films after the annealing. It is also shown that the coefficient of thermal expansion, hence the residual stress in layers, varies with the thickness. Finally, several free-standing membranes were fabricated and the results are compared.

  16. Pulsed DC reactively sputtered tantalum oxide thin films for embedded capacitors

    NASA Astrophysics Data System (ADS)

    Jain, Pushkar

    Embedded capacitor technology, where thin film capacitors are integrated at on-chip and/or off-chip levels, offers high packaging densities and improved electrical performance at potentially reduced costs of capacitor fabrication and integration. This research explores and establishes the leverages of using thin film embedded capacitors over currently used surface mount discrete capacitors. In particular, this thesis focuses on developing pulsed dc reactively sputtered tantalum oxide (Ta2O5) thin film capacitors to be integrated into established interconnect technologies of IC chips and packages. A correlation between electrical breakdown field and dielectric constant, EBR (MV/cm) = (20/ 3r ) is empirically determined and used to establish a design space for breakdown voltage and capacitance density of planar capacitors, with film thickness and material dielectric constant as parameters. This design space sets the limits for "best one can achieve" (BOCA) breakdown voltages and capacitance densities using a particular dielectric. The validity of the developed design space is experimentally verified with Ta2O 5 thin films over a wide range of film thickness (0.05 to 5.4 mum). High frequency test vehicles were designed and fabricated to evaluate the electrical performance of Ta2O5, SiO 2, and Si3N4 thin film capacitors over a wide range of frequencies (dc to 20 GHz). Ta2O5, SiO 2, and Si3N4 show no dispersion at least up to 20 GHz. The total inductance of power connect vias is determined to be less than 50 pH/mum of via, which is at least two orders of magnitude lower than most discrete capacitors along with connection leads (>4 nH). The extent of Cu diffusion/drift into Ta2O5 films is determined and compared with Al, Ta, and Ti at various biasing and temperature conditions using bias-temperature-stress (BTS) and triangular voltage sweep (TVS) techniques. No Cu diffusion was detected at 150°C at least till 0.75 MV/cm. (Abstract shortened by UMI.)

  17. High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process

    NASA Astrophysics Data System (ADS)

    Wada, Akira; Zhang, Rui; Takagi, Shinichi; Samukawa, Seiji

    2012-05-01

    High-quality germanium dioxide (GeO2) as a gate oxide is in high demand for use in future high mobility Ge-channel field-effect transistors. GeO2 thin films were directly formed by using a damage-free and low-temperature process of neutral beam oxidation (NBO) after treatment with hydrogen (H) radicals. GeO2 thin films (equivalent oxide thickness (EOT) = 1.7 nm) with a high-quality interface and an extremely low interface state density (<1 × 1011 cm-2 eV-1) could be formed even at low temperature (300 °C) by combining the H radical treatment, which resulted in the removal of native oxides, with the NBO process we developed.

  18. Multilayered metal oxide thin film gas sensors obtained by conventional and RF plasma-assisted laser ablation

    NASA Astrophysics Data System (ADS)

    Mitu, B.; Marotta, V.; Orlando, S.

    2006-04-01

    Multilayered thin films of In 2O 3 and SnO 2 have been deposited by conventional and RF plasma-assisted reactive pulsed laser ablation, with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser ( λ = 532 nm, τ = 7 ns) on Si(1 0 0) substrates, in O 2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported.

  19. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    SciTech Connect

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-21

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

  20. Magnetic and electrical properties of transition-metal-doped oxide thin films

    NASA Astrophysics Data System (ADS)

    Lam, Ching Yee

    In this research programme, the electrical and magnetic properties of PLD and room temperature grown TM-doped TiO2 and TM-doped Cu xO thin films have been investigated. We used Co and Fe as the TM dopants for the TiO2 based films. Mn was however used to dope the Cu xO materials systems. Among the various electrical properties, resistive switching of transition-metal oxide thin films and electrical rectifying property of an all-oxide p-n diode have been studied. The resistive switching of anatase phase TM-doped TiO 2 has been determined using two top-down configurations of Ag/TM-doped TiO2/Pt and In/TM-doped TiO2/TiN. Despite the fact that same transition-metal oxide was used, the switching characteristics of these two configurations were significantly different. For example, both the unipolar and bipolar switching were observed in pure TiO2 films. Heterostructures of Ag/TiO2/Pt have also been deposited on flexible PET substrates at room temperature by PLD. These oxide films on flexible substrate not only show resistive switching, but produce an average switching ratio as high as over 6 orders of magnitude. The resistive switching in In/CuxO/Pt and In/Mn-doped CuxO/Pt films have also been demonstrated in the present study. Our results indicate clearly that the switching stability of the In/CuxO/Pt systems is improved by the Mn-doping. Our ultimate goal is to produce a ferromagnetic all-oxide p-n junction diode. We obtained room-temperature ferromagnetism in the epitaxially grown anatase n-type Co-doped TiO2 and possible p-type Fe-doped TiO 2 thin films. At the same time, the 3.7 at.% Mn-doped Cu2O epitaxial films have been prepared. They are p-type conducting and have been properly utilized to form good rectifying all-oxide heterojunction with the n-type Nb-SrTiO3 substrates. The p-type Mn-doped Cu2O films that we have made so far, although exhibit ferromagnetism at low temperatures <50K, do not reveal any room temperature ferromagnetic characteristics. It is

  1. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  2. Studies of aluminum oxide thin films deposited by laser ablation technique

    NASA Astrophysics Data System (ADS)

    Płóciennik, P.; Guichaoua, D.; Korcala, A.; Zawadzka, A.

    2016-06-01

    This paper presents the structural and optical investigations of the aluminum oxide nanocrystalline thin films. Investigated films were fabricated by laser ablation technique in high vacuum onto quartz substrates. The films were deposited at two different temperatures of the substrates equal to room temperature and 900 K. X-ray Diffraction spectra proved nanocrystalline character and the corundum phase of the film regardless on the substrate temperature during the deposition process. Values of the refractive indices, extinction and absorption coefficients were calculated by using Transmission and Reflection Spectroscopy in the UV-VIS-NIR range of the wavelength. Coupling Prism Method was used for films thickness estimations. Experimental measurements and theoretical calculations of the Third Harmonic Generation were also reported. Obtained results show that the lattice strain may affect obtained values of the third order nonlinear optical susceptibility.

  3. Research Update: Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    SciTech Connect

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-07-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO{sub 3} thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was observed by X-ray diffraction that SrTiO{sub 3} stoichiometry depends on the composition of the background gas during deposition, where in a relative small pressure range between 10{sup −2} mbars and 10{sup −1} mbars oxygen partial pressure, the resulting film becomes fully stoichiometric. Furthermore, upon increasing the oxygen (partial) pressure, the growth mode changes from 3D island growth to a 2D layer-by-layer growth mode as observed by reflection high energy electron diffraction.

  4. Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering

    SciTech Connect

    Yoshimura, Kazuki; Miki, Takeshi; Tanemura, Sakae

    1997-09-01

    Niobium oxide electrochromic thin films were prepared by reactive DC magnetron sputtering and their electrochromic properties for Li intercalation and durability were studied. Chronoamperometric analyses revealed that the extended space-charge limited model by Zhang et al. is applicable to Nb{sub 2}O{sub 5} films. Crystallized Nb{sub 2}O{sub 5} films showed excellent electrochromism and stability over many coloration-bleaching cycles. The best performance was obtained for films with a substrate temperature of 500 C and an oxygen flow rate of 10 sccm. Electrochromic materials enable dynamic control of the throughput of radiant energy, and play a significant role in energy-efficient smart windows in order to reduce the cooling and lighting costs of buildings.

  5. Optical absorption in lithiated tungsten oxide thin films: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Berggren, Lars; Jonsson, Jacob C.; Niklasson, Gunnar A.

    2007-10-01

    Amorphous tungsten oxide exhibits electrochromism when intercalated with protons, lithium, sodium, and other ions. Thin films of the material were prepared by dc magnetron sputtering and then electrochemically intercalated with lithium. The optical absorption in the wavelength range of 300-2500nm was measured for a number of lithium concentrations. The optical absorption shows a maximum for lithium/tungsten ratios of 0.3-0.5. The optical spectra can be fitted by a superposition of three Gaussian peaks, representing the three possible electronic transitions between W6+, W5+, and W4+ sites. The variation of the peak strength with lithium concentration is consistent with an extended site-saturation theory.

  6. Structure of a zinc oxide ultra-thin film on Rh(100)

    SciTech Connect

    Yuhara, J.; Kato, D.; Matsui, T.; Mizuno, S.

    2015-11-07

    The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I–V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I–V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively.

  7. Preparation and characterization of RF sputtered Ce-V mixed oxide thin films

    SciTech Connect

    Malini, D. Rachel; Sanjeeviraja, C.

    2012-06-05

    Cerium-Vanadium mixed oxide thin films were deposited at room temperature by varying RF power in RF magnetron sputtering. The morphology and structural features were studied by taking FESEM and XRD and optical properties were analyzed by taking transmittance and absorption spectra. The crystalline film shows orthorhombic CeVO{sub 3} phase and the observed grain size varies from 89.4nm to 208.7nm. The transmission increases and the absorption edge at 330nm is blue shifted with increase in RF power. The optical band gap is found to increase from 1.59 to 1.94eV. The PL spectra shows blue shift in the emission peak centered at a wavelength of 495nm with increase in RF power.

  8. Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

    NASA Astrophysics Data System (ADS)

    Xu, Rui; He, Jian; Li, Wei; Paine, David C.

    2015-12-01

    The effect of microwave annealing on the field effect mobility and threshold voltage of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) is reported. A control device with traditional hotplate annealing at 200 °C for 1 h was applied for comparison. The results show that both microwave annealing and low-temperature hotplate annealing increase the field effect mobility from 12.3 cm2/V s in as-deposited state to ∼19 cm2/V s in annealed state. However, the negative shift in threshold voltage with microwave annealing (from 0.23 V to -2.86 V) is smaller than that with low-temperature hotplate annealing (to -9 V). A mechanism related with the electrical properties of a-IZO material is proposed. This rapid low-temperature annealing technology makes a-IZO TFTs promising for use in flexible, transparent electronics.

  9. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    NASA Astrophysics Data System (ADS)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  10. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    SciTech Connect

    Xu, Rui; He, Jian; Song, Yang; Li, Wei; Zaslavsky, A.; Paine, D. C.

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  11. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Xu, Rui; He, Jian; Song, Yang; Li, Wei; Zaslavsky, A.; Paine, D. C.

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ˜10-2 Ω cm2, ˜3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ˜27 cm2/V s and an on/off ratio >107. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  12. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    NASA Astrophysics Data System (ADS)

    Ederth, J.; Hultåker, A.; Niklasson, G. A.; Heszler, P.; van Doorn, A. R.; Jongerius, M. J.; Burgard, D.; Granqvist, C. G.

    2005-11-01

    Electrical and optical properties were investigated in porous thin films consisting of In2O3:Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap.

  13. Oxidation induced internal exoemission in thin film Mg/Si Schottky diodes

    NASA Astrophysics Data System (ADS)

    Nienhaus, Hermann

    2005-03-01

    When thin film Mg/p-Si(111) diodes are exposed to oxygen molecules an internal reverse current is observed. Such chemicurrents are due to electron-hole pairs created by the chemical reaction at the metal surface and indicate the non-adiabatic character of chemical energy dissipation. The transient of the current represents the kinetics of the Mg oxidation process and may be explained by a nucleation-and-growth model. Two types of Mg/Si diodes with different homogeneous Schottky barrier heights of 0.7 and 0.8 eV, respectively, could be fabricated by modifying the Mg/Si interface. A dependence between the homogeneous barrier height and the sensitivity of the diode to detect the chemically induced hot charge carriers can be demonstrated. The energy distribution of the internally excited charge carriers deduced from the data may be described by a Boltzmann exponential function with an effective electron temperature of approximately 1600 K.

  14. Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

    PubMed

    Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

    2016-05-01

    In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films. PMID:27483853

  15. Stoichiometric analysis of compositionally graded combinatorial amorphous thin film oxides using laser-induced breakdown spectroscopy

    SciTech Connect

    Widjonarko, N. Edwin; Perkins, John D.; Leisch, Jennifer E.; Parilla, Philip A.; Curtis, Calvin J.; Ginley, David S.; Berry, Joseph J.

    2010-07-15

    Laser-induced breakdown spectroscopy (LIBS) is a recently developed locally destructive elemental analysis technique that can be used to analyze solid, liquid, and gaseous samples. In the system explored here, a neodymium-doped yttrium aluminum garnet laser ablates a small amount of the sample and spectral emission from the plume is analyzed using a set of synchronized spectrometers. We explore the use of LIBS to map the stoichiometry of compositionally graded amorphous indium zinc oxide thin-film libraries. After optimization of the experimental parameters (distance between lens and samples, spot size on the samples, etc.), the LIBS system was calibrated against inductively coupled plasma atomic emission spectroscopy which resulted in a very consistent LIBS-based elemental analysis. Various parameters that need to be watched closely in order to produce consistent results are discussed. We also compare LIBS and x-ray fluorescence as techniques for the compositional mapping of libraries.

  16. Size-effects on the optical properties of zirconium oxide thin films

    SciTech Connect

    Ramana, C. V.; Vemuri, R. S.; Fernandez, I.; Campbell, A. L.

    2009-12-07

    Zirconium oxide (ZrO{sub 2}) thin films with an average crystallite-size (L) ranging from 5 to 25 nm were grown by sputter deposition onto optical grade quartz substrates. The optical properties of grown ZrO{sub 2} films were evaluated using optical transmission and reflectance spectroscopic measurements. The size-effects were significant on the optical characteristics of ZrO{sub 2} films. The bandgap energy (E{sub g}) was found to increase from 5.78 to 6.07 eV with decreasing L values from 20 to 7 nm. A direct, linear inverse L-E{sub g} relationship found for ZrO{sub 2} films suggest that tuning optical properties for desired applications can be achieved by controlling the size.

  17. Improved Stability Of Amorphous Zinc Tin Oxide Thin Film Transistors Using Molecular Passivation

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Pandey, Archana; Vilayur Ganapathy, Subramanian; Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2013-10-21

    The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFT) have been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid (n-HPA) when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

  18. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    NASA Astrophysics Data System (ADS)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  19. Reclaim System Design of Indium Tin Oxide Thin-Film Removal from Color Filters of Displays

    NASA Astrophysics Data System (ADS)

    Pa, Pai-Shan

    2008-09-01

    A newly design precision reclaim system using electrochemical machining as an etching process for indium tin oxide (ITO) thin-film removal from the color filter surface of a displays is presented. Through the ultra precise etching of the nanostructure, the semiconductor industry can effectively recycle defective products, thereby reducing production costs. A large gyration diameter of a cathode combined with a small gap width between the cathode and a workpiece takes less time for the same amount of ITO removed. An adequate feed rate of color filters combined with a sufficient electric power produces fast machining. Pulsed direct current and higher rotational speed of the cathode can improve the effects of dregs discharge and are advantageous to be combined with a high feed rate of workpieces. Electrochemical machining only requires a short time to easily and cleanly remove ITO films.

  20. Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films

    NASA Astrophysics Data System (ADS)

    Ichimura, Masaya; Kajima, Takahiro; Kawai, Shoichi; Mibu, Ko

    2016-03-01

    Iron-sulfide-oxide thin films, which are promising candidates for solar cell materials, were deposited by electrochemical deposition. As-deposited and annealed films were characterized by Mössbauer spectroscopy, X-ray diffraction (XRD), and Raman scattering at room temperature. The as-deposited film is amorphous, and the oxygen content is about 1/4 of the sulfur content (S/Fe ≈ 1.5, O/Fe ≈ 0.4). The Mössbauer spectrum for the as-deposited film is a doublet with a broad line profile having hyperfine parameters similar to those of FeS2 pyrite or marcasite. This indicates that Fe atoms are in the Fe2+ low-spin state, as in FeS2.

  1. A numerical study on the mechanical characteristics of zinc oxide-based transparent thin film transistors.

    PubMed

    Lee, D-K; Park, K; Ahn, J-H; Lee, N-E; Kim, Y-J

    2011-07-01

    Zinc Oxide (ZnO) based Thin Film Transistors (TFTs) have been fabricated and analyzed to investigate mechanical characteristics regarding the stress, strain and deformation of electro circuits using the Finite Element Method (FEM). As the best compromise between the stretching and bending abilities, the coating thickness of SU-8 can be as important for bendability as a neutral mechanical plane. The neutral mechanical plane in electro circuits was designed for obtaining flexibility, e.g., bendability, in a previous numerical study. After that, through experimental validation, we observed what degree of SU-8 thickness was attributable for improved mechanical stability. The results suggest that not only numerical but also experimental measurements of the deformation and SU-8 coating thickness in electro circuits are useful for enhancing structural stability. PMID:22121623

  2. Structure of a zinc oxide ultra-thin film on Rh(100).

    PubMed

    Yuhara, J; Kato, D; Matsui, T; Mizuno, S

    2015-11-01

    The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I-V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I-V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively. PMID:26547176

  3. Structure of a zinc oxide ultra-thin film on Rh(100)

    NASA Astrophysics Data System (ADS)

    Yuhara, J.; Kato, D.; Matsui, T.; Mizuno, S.

    2015-11-01

    The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I-V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I-V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimized models A and B, respectively.

  4. Flexible thin-film battery based on graphene-oxide embedded in solid polymer electrolyte

    NASA Astrophysics Data System (ADS)

    Kammoun, M.; Berg, S.; Ardebili, H.

    2015-10-01

    Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method that is economical and scalable. The laminated battery shows robust mechanical flexibility over 6000 bending cycles and excellent electrochemical performance in both flat and bent configurations. Finite element analysis (FEA) of the LIB provides critical insights into the evolution of mechanical stresses during lamination and bending.Enhanced safety of flexible batteries is an imperative objective due to the intimate interaction of such devices with human organs such as flexible batteries that are integrated with touch-screens or embedded in clothing or space suits. In this study, the fabrication and testing of a high performance thin-film Li-ion battery (LIB) is reported that is both flexible and relatively safer compared to the conventional electrolyte based batteries. The concept is facilitated by the use of solid polymer nanocomposite electrolyte, specifically, composed of polyethylene oxide (PEO) matrix and 1 wt% graphene oxide (GO) nanosheets. The flexible LIB exhibits a high maximum operating voltage of 4.9 V, high capacity of 0.13 mA h cm-2 and an energy density of 4.8 mW h cm-3. The battery is encapsulated using a simple lamination method

  5. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    NASA Astrophysics Data System (ADS)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  6. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    SciTech Connect

    Baldi, G. Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S.

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  7. Conductive Perovskite-type Metal Oxide Thin Films Prepared by Chemical Solution Deposition Technique

    NASA Astrophysics Data System (ADS)

    Sasajima, K.; Uchida, H.

    2011-10-01

    Metal oxide electrode have been widely developed for high-performance electric device because they possess some attractive characteristic such as thermal/chemical stabilities and change compensation for oxygen vacancies in interconnected dielectric layers, etc., which is often hardly achieved by convention metal electrodes. As almost all metal oxide electrodes were usually fabricated by some vapour deposition techniques which require large-scale equipments, power, resources and costs, film deposition via solution technique would be worthy for familiarizing the metal oxide electrodes. In this research, thin films of conductive perovskite-type oxides, (La,Sr)CoO3 [LSCO], were fabricated by chemical solution deposition technique. The precursor solution for LSCO was prepared using metal nitrate, acetates, and iso-propoxide and 2-methoxyethanol. The solution was spin-coated on substrates, followed by drying, pyrolysis and RTA-treatment for crystallization at 500-750°C, for 5 min in air. These processes were repeated to obtain desired film thickness. (100)Si and (100)SrTiO3 were used as substrate. XRD analysis indicated that both of LSCO films fabricated on (100)SrTiO3 and (100)Si substrates were crystallized at and above 600°C. The films on (100)SrTiO3 had preferential crystal orientation of (100)LSCO normal to the substrate surface, while random crystal orientation was confirmed for the films on (100)Si. Electrical resistivity of the both films fabricated at 700°C were 6.09 × 10-5 Ω cm and 1.12 × 10-4 Ω cm, respectively, which is almost same as the LSCO films fabricated by conventional vapour deposition technique.

  8. Tungsten oxide (WO{sub 3}) thin films for application in advanced energy systems

    SciTech Connect

    Gullapalli, S. K.; Vemuri, R. S.; Manciu, F. S.; Enriquez, J. L.; Ramana, C. V.

    2010-07-15

    Inherent processes in coal gasification plants produce hazardous hydrogen sulfide (H{sub 2}S), which must be continuously and efficiently detected and removed before the fuel is used for power generation. An attempt has been made in this work to fabricate tungsten oxide (WO{sub 3}) thin films by radio-frequency reactive magnetron-sputter deposition. The impetus being the use of WO{sub 3} films for H{sub 2}S sensors in coal gasification plants. The effect of growth temperature, which is varied in the range of 30-500 deg. C, on the growth and microstructure of WO{sub 3} thin films is investigated. Characterizations made using scanning electron microscopy (SEM) and x-ray diffraction (XRD) indicate that the effect of temperature is significant on the microstructure of WO{sub 3} films. XRD and SEM results indicate that the WO{sub 3} films grown at room temperature are amorphous, whereas films grown at higher temperatures are nanocrystalline. The average grain-size increases with increasing temperature. WO{sub 3} films exhibit smooth morphology at growth temperatures {<=}300 deg. C while relatively rough at >300 deg. C. The analyses indicate that the nanocrystalline WO{sub 3} films grown at 100-300 deg. C could be the potential candidates for H{sub 2}S sensor development for application in coal gasification systems.

  9. Substrate dependant capacitive performance of spray pyrolysed titanium oxide (TiO2) thin films

    NASA Astrophysics Data System (ADS)

    Fugare, B. Y.; Ingole, R. S.; Ambare, R. C.; Lokhande, B. J.

    2016-04-01

    Using 60 ml, 0.06 M aqueous solution of potassium titanium oxalate (pto), thin films of titanium oxide were prepared by using well known spray pyrolysis technique. Depositions of the films carried out at 723° K by maintain the spray rate 12 Cc/min. prepared thin films were characterized structurally, morphologically and electrochemically. Sample shows tetragonal crystal structure with rutile as prominent phase at very low deposition temperature. SEM morphology shows porous, dense, nanorods and nanoplates like morphology. The electrochemical cyclic voltammetery shows mixed capacitive behavior. The specific capacitance values observed from cyclic voltammetery in 1 M NaOH are 2497.19, 29.60, 424.22 F/g. for the electrode deposited on copper, FTO and stainless steel (SS) respectively. Charge discharge behavior was observed for the samples deposited on stainless steel gives specific energy (SE), specific power (SP) and efficiency (η) are 43.25 Wh/kg, 35.25 kW/kg and 98.22 % respectively. Impedance study was carried out in the frequency range 1 mHz to 1 MHz exhibits very less internal resistance 1.066 Ohm for the deposited electrode.

  10. High-mobility thin film transistors with neodymium-substituted indium oxide active layer

    SciTech Connect

    Lin, Zhenguo; Lan, Linfeng Xiao, Peng; Sun, Sheng; Li, Yuzhi; Song, Wei; Gao, Peixiong; Wang, Lei; Ning, Honglong; Peng, Junbiao

    2015-09-14

    Thin-film transistors (TFTs) with neodymium-substituted indium oxide (InNdO) channel layer were demonstrated. The structural properties of the InNdO films as a function of annealing temperature have been analyzed using X-ray diffraction and transmission electron microscopy. The InNdO thin films showed polycrystalline nature when annealed at 450 °C with a lattice parameter (cubic cell) of 10.255 Å, which is larger than the cubic In{sub 2}O{sub 3} film (10.117 Å). The high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy showed that no Nd{sub 2}O{sub 3} clusters were found in the InNdO film, implying that Nd was incorporated into the In{sub 2}O{sub 3} lattice. The InNdO TFTs annealed at 450 °C exhibited more excellent electrical properties with a high mobility of 20.4 cm{sup 2} V{sup −1} s{sup −1} and better electric bias stability compared to those annealed at 300 °C, which was attributed to the reduction of the scattering centers and/or charge traps due to the decrease of the |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}〉 electron configuration.

  11. Laser-induced metal plasmas for pulsed laser deposition of metal-oxide thin films

    NASA Astrophysics Data System (ADS)

    Wagenaars, Erik; Colgan, James; Rajendiran, Sudha; Rossall, Andrew

    2015-09-01

    Metal and metal-oxide thin films, e.g. ZnO, MgO, Al2O3 and TiO2, are widely used in e.g. microelectronics, catalysts, photonics and displays. Pulsed Laser Deposition (PLD) is a plasma-based thin-film deposition technique that is highly versatile and fast, however it suffers from limitations in control of film quality due to a lack of fundamental understanding of the underlying physical processes. We present experimental and modelling studies of the initial phases of PLD: laser ablation and plume expansion. A 2D hydrodynamic code, POLLUX, is used to model the laser-solid interaction of a Zn ablation with a Nd:YAG laser. In this early phase of PLD, the plasma plume has temperatures of about 10 eV, is highly ionized, and travels with a velocity of about 10-100 km/sec away from the target. Subsequently, the plasma enters the plume expansion phase in which the plasma cools down and collision chemistry changes the composition of the plume. Time-integrated optical emission spectroscopy shows that Zn I and Zn II emission lines dominate the visible range of the light emission. Comparison with the Los Alamos plasma kinetics code ATOMIC shows an average temperature around 1 eV, indicating a significant drop in plasma temperature during the expansion phase. We acknowledge support from the UK Engineering and Physical Sciences Research Council (EPSRC), Grant EP/K018388/1.

  12. Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

    NASA Astrophysics Data System (ADS)

    Zhu, Changqiong

    Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from

  13. ZnO transparent conductive oxide for thin film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  14. Hydrogen storage in Ti, V and their oxides-based thin films

    NASA Astrophysics Data System (ADS)

    Tarnawski, Z.; Zakrzewska, K.; Kim-Ngan, N.-T. H.; Krupska, M.; Sowa, S.; Drogowska, K.; Havela, L.; Balogh, A. G.

    2015-03-01

    We have investigated the hydrogen storage ability and the effect of hydrogenation on structure and physical properties of Ti/V and their oxides-based thin films. A series of Ti-TiO2 and VOx-TiO2 thin films with different layer structures, geometries and thicknesses have been prepared by the sputtering technique on different (Si(111), SiO2, C) substrates. For the Ti-TiO2-Ti films up to 50 at.% of hydrogen can be stored in the Ti layers, while the hydrogen can penetrate without accumulation through the TiO2 layer. A large hydrogen storage was also found in some V2O5-TiO2 films. Hydrogen could also remove the preferential orientation in the Ti films and induce a transition of V2O5 to VO2 in the films. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam.

  15. Crystal structure and electronic properties of bulk and thin film brownmillerite oxides.

    SciTech Connect

    Young, Joshua; Rondinelli, James M.

    2015-11-17

    The equilibrium structure and functional properties exhibited by brownmillerite oxides, a family of perovskitederived structures with alternating layers of BO6 octahedra and BO4 tetrahedra, viz., ordered arrangements of oxygen vacancies, is dependent on a variety of competing crystal-chemistry factors. We use electronic structure calculations to disentangle the complex interactions in two ferrates, Sr2Fe2O5 and Ca2Fe2O5, relating the stability of the equilibrium (strain-free) and thin film structures to both previously identified and herein newly proposed descriptors.We show that cation size and intralayer separation of the tetrahedral chains provide key contributions to the preferred ground state. We show the bulk ground-state structure is retained in the ferrates over a range of strain values; however, a change in the orientation of the tetrahedral chains, i.e., a perpendicular orientation of the vacancies relative to the substrate, is stabilized in the compressive region. The structure stability under strain is largely governed by maximizing the intraplane separation of the dipoles generated from rotations of the FeO4 tetrahedra. Lastly, we find that the electronic band gap is strongly influenced by strain, manifesting as an unanticipated asymmetric-vacancy alignment dependent response. This atomistic understanding establishes a practical route for the design of functional electronic materials in thin film geometries.

  16. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Szymańska, Magdalena; Gierałtowska, Sylwia; Wachnicki, Łukasz; Grobelny, Marcin; Makowska, Katarzyna; Mroczyński, Robert

    2014-05-01

    The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O2 flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfOx and HfOxNy layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal-insulator-semiconductor (MIS) structures with HfOx or HfOxNy gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS).

  17. Surface chemistry of coated lithium manganese nickel oxide thin film cathodes studied by XPS

    SciTech Connect

    Baggetto, Loic; Dudney, Nancy J; Veith, Gabriel M

    2013-01-01

    The effect of coating high voltage LiMn1.5Ni0.5O4 spinel cathode thin films with three metal oxide thin layers is discussed. The changes in surface chemistry of the electrodes are measured by X-ray photoelectron spectroscopy. ZnO is found to decompose during the first charge whereas Al2O3 and ZrO2 are stable for more than 100 cycles. ZrO2, however, importantly limits the available Li storage capacity of the electrochemical reaction due to poorer kinetics. Al2O3 offers the best results in term of capacity retention. Upon cycling, the evidence of a signal at 75.4 eV in the Al2p binding energy spectrum indicates the partial conversion of Al2O3 into Al2O2F2. Moreover, the continuous formation of PEO , esters and LixPOyFz compounds on the surface of the electrodes is found for all coating materials.

  18. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  19. Crystal structure and electronic properties of bulk and thin film brownmillerite oxides

    NASA Astrophysics Data System (ADS)

    Young, Joshua; Rondinelli, James M.

    2015-11-01

    The equilibrium structure and functional properties exhibited by brownmillerite oxides, a family of perovskite-derived structures with alternating layers of B O6 octahedra and B O4 tetrahedra, viz., ordered arrangements of oxygen vacancies, is dependent on a variety of competing crystal-chemistry factors. We use electronic structure calculations to disentangle the complex interactions in two ferrates, Sr2Fe2O5 and Ca2Fe2O5 , relating the stability of the equilibrium (strain-free) and thin film structures to both previously identified and herein newly proposed descriptors. We show that cation size and intralayer separation of the tetrahedral chains provide key contributions to the preferred ground state. We show the bulk ground-state structure is retained in the ferrates over a range of strain values; however, a change in the orientation of the tetrahedral chains, i.e., a perpendicular orientation of the vacancies relative to the substrate, is stabilized in the compressive region. The structure stability under strain is largely governed by maximizing the intraplane separation of the dipoles generated from rotations of the FeO4 tetrahedra. Lastly, we find that the electronic band gap is strongly influenced by strain, manifesting as an unanticipated asymmetric-vacancy alignment dependent response. This atomistic understanding establishes a practical route for the design of functional electronic materials in thin film geometries.

  20. Effect of solvent ratio on the optoelectronic properties of fluorine doped tin oxide thin films

    SciTech Connect

    Karthick, P.; Divya, V.; Sridharan, M.; Jeyadheepan, K.

    2015-06-24

    Fluorine doped tin oxide (FTO) thin films were deposited on to the well cleaned microscopic glass substrates using nebulized-spray pyrolysis (n-SP) technique by varying the water to ethanol solvent proportion. The deposited thin films were characterized by X-ray diffraction (XRD), UV-Vis-NIR spectroscopy, field emission scanning electron microscopy and Hall measurements to study the structural, optical, surface morphological and electrical properties of the films, respectively. Results of the analyzes show that the films are polycrystalline, having tetragonal structure with the preferred orientation along (110) plane. The grain size varies between 7 to 20 nm. The optimized films exhibit the optical transparency of 85 % at the wavelength of 580 nm. The optical bandgap lies in the range of 3.94 to 4 eV. The optimized films, deposited with 40 % of ethanol proportion are having the mean resistivity 4.72×10{sup −3} Ω-cm, carrier concentration 1.79×10{sup 20} cm{sup 3} and the mobility 7 cm{sup 2}/Vs.

  1. Tailoring of absorption edge by thermal annealing in tin oxide thin films

    SciTech Connect

    Thakur, Anup; Gautam, Sanjeev; Kumar, Virender; Chae, K. H.; Lee, Ik-Jae; Shin, Hyun Joon

    2015-05-15

    Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

  2. Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

    SciTech Connect

    Li, Qichao; Mao, Wenfeng; Zhou, Yawei; Yang, Chunhong; Liu, Yong; He, Chunqing

    2015-07-14

    Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.

  3. Stretchable metal oxide thin film transistors on engineered substrate for electronic skin applications.

    PubMed

    Romeo, Alessia; Lacour, Stphanie P

    2015-08-01

    Electronic skins aim at providing distributed sensing and computation in a large-area and elastic membrane. Control and addressing of high-density soft sensors will be achieved when thin film transistor matrices are also integrated in the soft carrier substrate. Here, we report on the design, manufacturing and characterization of metal oxide thin film transistors on these stretchable substrates. The TFTs are integrated onto an engineered silicone substrate with embedded strain relief to protect the devices from catastrophic cracking. The TFT stack is composed of an amorphous In-Ga-Zn-O active layer, a hybrid AlxOy/Parylene dielectric film, gold electrodes and interconnects. All layers are prepared and patterned with planar, low temperature and dry processing. We demonstrate the interconnected IGZO TFTs sustain applied tensile strain up to 20% without electrical degradation and mechanical fracture. Active devices are critical for distributed sensing. The compatibility of IGZO TFTs with soft and biocompatible substrates is an encouraging step towards wearable electronic skins. PMID:26738152

  4. Producing ultra-thin silica coatings on iron-oxide nanoparticles to improve their surface reactivity

    NASA Astrophysics Data System (ADS)

    Kralj, Slavko; Makovec, Darko; Čampelj, Stanislav; Drofenik, Miha

    2010-07-01

    The reactivity of the relatively inert surfaces of iron-oxide magnetic nanoparticles can be significantly improved by coating the surfaces with silica. Unfortunately, however, this nonmagnetic silica layer tends to dilute the magnetic properties of the nanoparticles. Therefore, the silica layer should be as continuous, homogeneous, and as thin as possible. In this investigation we coated superparamagnetic maghemite nanoparticles by hydrolysis and the polycondensation of tetraethyl orthosilicate (TEOS), with the ethanol solution of TEOS being added to a stable suspension of citric acid-coated nanoparticles. The influences of the various parameters of the procedure on the quality of the coatings were systematically evaluated. The quality of the silica layer was characterized using electron microscopy and by performing leaching of the nanoparticles in HCl, while the surface reactivity was tested by grafting (3-aminopropyl) triethoxysilane (APS) onto the nanoparticles. We observed that the surface concentration of the grafted APS strongly increased when the nanoparticles were coated with a silica layer. The choice of experimental conditions for the coating procedure that favors the heterogeneous nucleation of silica on the surfaces of the nanoparticles enabled the preparation of very thin silica layers, less than 2 nm thick. By decreasing the amount of added TEOS to correspond to a monolayer of -Si-OH at the nanoparticles' surfaces, their surface reactivity could be very much improved, and with a reduction in their magnetization of only ˜10%.

  5. Zinc oxide epitaxial thin film deposited over carbon on various substrate by pulsed laser deposition technique.

    PubMed

    Manikandan, E; Moodley, M K; Sinha Ray, S; Panigrahi, B K; Krishnan, R; Padhy, N; Nair, K G M; Tyagi, A K

    2010-09-01

    Zinc Oxide (ZnO) is a promising candidate material for optical and electronic devices due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). For applications in various fields such as light emitting diode (LED) and laser diodes, growth of p-type ZnO is a prerequisite. ZnO is an intrinsically n-type semiconductor. In this paper we report on the synthesis of Zinc Oxide-Carbon (ZnO:C) thin films using pulsed laser deposition technique (PLD). The deposition parameters were optimized to obtain high quality epitaxial ZnO films over a carbon layer. The structural and optical properties were studied by glazing index X-ray diffraction (GIXRD), photoluminescence (PL), optical absorption (OA), and Raman spectroscopy. Rutherford backscattering spectroscopy (RBS), scanning electron microscopy with energy dispersive spectroscopy (SEMEDS) and atomic force microscopy (AFM) were employed to determine the composition and surface morphology of these thin films. The GIXRD pattern of the synthesized films exhibited hexagonal wurtzite crystal structure with a preferred (002) orientation. PL spectroscopy results showed that the emission intensity was maximum at -380 nm at a deposition temperature of 573 K. In the Raman spectra, the E2 phonon frequency around at 438 cm(-1) is a characteristic peak of the wurtzite lattice and could be seen in all samples. Furthermore, the optical direct band gap of ZnO films was found to be in the visible region. The growth of the epitaxial layer is discussed in the light of carbon atoms from the buffer layer. Our work demonstrates that the carbon is a novel dopant in the group of doped ZnO semiconductor materials. The introduction of carbon impurities enhanced the visible emission of red-green luminescence. It is concluded that the carbon impurities promote the zinc related native defect in ZnO. PMID:21133080

  6. Tailored surfaces of perovskite oxide substrates for conducted growth of thin films.

    PubMed

    Sánchez, Florencio; Ocal, Carmen; Fontcuberta, Josep

    2014-04-01

    Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct perovskites that could not be anticipated on the basis of those of the adjacent epitaxial layers. All dreamed new prospects require the use of suitable substrates for epitaxial growth. Perovskite single crystals are the workhorses of this activity and understanding and controlling their surface properties have become critical. In this tutorial review we will chiefly focus on the impact of the morphology and composition of the surface of ABO3 perovskite substrates on the growth mechanisms and properties of thin films epitaxially grown on them. As SrTiO3 is the most popular substrate, we will mostly concentrate on describing the current understanding and achievements for it. Illustrative examples of other perovskite substrates (LaAlO3, LSAT and DyScO3) will be also included. We will show that distinct chemical terminations can exist on the surfaces used for growth and we will review methods employed either to select the most appropriate one for specific growth to allow, for instance, tailoring the ultimate outmost epilayer, or to induce self-ordering to engineer long-range nanoscale patterns of chemical terminations. We will demonstrate the capacity of this knowledge by the growth of low-dimensional organic and inorganic structures. PMID:24553667

  7. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    PubMed

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%. PMID:27433704

  8. Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Elamurugu, Elangovan; Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2014-03-01

    Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In2O3 (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n- type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % - 90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (Eg) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as- deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

  9. Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides

    DOEpatents

    Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

    1987-01-01

    A method of synthesizing electro-optically active reaction products from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of electro-optically active transition metal oxides.

  10. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    SciTech Connect

    Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

    2013-11-21

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  11. In-Situ Preparation of Ytterbium-Barium - Superconducting Thin Films Using Pure Ozone Vapor Oxidation

    NASA Astrophysics Data System (ADS)

    Berkley, Dale Dane

    A new process for preparing thin films of the YBa_2Cu_3O _{rm 7-x} high transition temperature superconducting oxide completely in-situ, without the need for a post-evaporation anneal has been developed. This work is a significant advancement in the effort to achieve a fully mature, high quality thin film-making process for scientific and technical applications. A pure ozone vapor, derived from the distilled liquid, is used to oxidize the co-evaporated metallic constituents during deposition to nucleate the superconducting phase in the vacuum chamber. Films exhibiting zero resistance transition temperatures at 85 K have been grown on strontium titanate substrates using a substrate temperature of 700 ^circC. Background evaporation pressures of 2 x 10^{-7}Torr are employed during film growth. Films prepared using this process contain primarily mixed a- and c-axis oriented grains which, as evidenced by Transmission Electron Microscopy, exhibit a high degree of epitaxial order with the substrate. Processing at lower substrate temperatures results in a depression of T _{rm c} consistent with the behavior observed for other in-situ techniques. It is unclear at this time whether this depression can be attributed to an oxygen deficiency or an expanded c-axis lattice parameter which is always associated with lower temperature processing. Measurements of the critical current of a prototype YBa_2Cu_3O _{rm 7-x}/Au/Pb proximity tunneling junction prepared in-situ using the ozone process do not exhibit the expected magnetic field and temperature dependence. This observation may be the result of a poorly defined tunneling geometry subject to the vagaries of edge effects or filamentary electrical shorts through the normal metal layer. Important implications for the investigation of an isotope effect in the high T_{rm c} superconductors is made possible by the development of the ozone technique. By distilling the ^{18}O gas into a "heavy ozone," thin films can be efficiently

  12. Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

    NASA Astrophysics Data System (ADS)

    Zhu, Changqiong

    Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from

  13. Shear-induced dry transfer of reduced graphene oxide thin film via roll-to-roll printing

    NASA Astrophysics Data System (ADS)

    Jang, Hyun-woo; Kim, Woo Soo

    2016-02-01

    Here, we report a printing mechanism that utilizes mechanical stress for dry transfer of chemically reduced graphene oxide (r-GO) thin film. We discover that shear stress induced on the elastomeric stamp surface facilitates delamination of the deposited r-GO thin film from the stamp. Shear stress is introduced in a roll-to-roll printing system by rotating the stamp roller faster than the substrate roller. Energy-balance theory for thin film transfer is suggested to analyze the film delamination behavior with induced shear stress. Facile dry transfer of r-GO thin film onto flexible substrates is demonstrated in a roll-to-roll printing system at a printing rate of 5 mm/min with calculated shear stress of 325.43 kPa.

  14. Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

    NASA Astrophysics Data System (ADS)

    Valour, Arnaud; Cheviré, François; Tessier, Franck; Grasset, Fabien; Dierre, Benjamin; Jiang, Tengfei; Faulques, Eric; Cario, Laurent; Jobic, Stéphane

    2016-04-01

    Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO2 substrate from a ZnO colloidal solution. Zinc peroxide (ZnO2) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H2O2 solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV-Visible transmittance spectroscopy.

  15. Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques

    NASA Astrophysics Data System (ADS)

    Zheng, Zejie; Yu, Xiao; Xie, Min; Cheng, Ran; Zhang, Rui; Zhao, Yi

    2016-07-01

    The ultra-thin body and ultra-thin buried-oxide (UTBB) Germanium-on-Insulator (GeOI) substrates have been fabricated by direct wafer bonding and polishing techniques. The Ge and BOX layer thicknesses are as thin as 9 and 13 nm, respectively. The UTBB GeOI substrates exhibit superior crystal quality (similar to the bulk single crystalline Ge) and sufficiently reduced surface roughness. As a result, the Hall hole mobility of UTBB GeOI reaches 1330 cm2/V s with a carrier concentration of 2 × 1016 cm-3. The inversion mode UTBB GeOI nMOSFETs have also been demonstrated with suppressed mobility degradation during Ge layer thinning, indicating the feasibility of this GeOI substrate formation technique in future CMOS technologies.

  16. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    NASA Astrophysics Data System (ADS)

    Schroeder, Herbert

    2015-06-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

  17. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    SciTech Connect

    Schroeder, Herbert

    2015-06-07

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating

  18. Metal Oxide Thin Film Growth by Laser Ablation and Its Applications in High Surface Area Photoanodes

    NASA Astrophysics Data System (ADS)

    Ghosh, Rudresh

    Thin films are widely used in various applications, including but not limited to simple reflective coatings for mirrors, electrodes for lithium batteries, conducting substrates for electronic circuits, gas sensors and solar cells. As the scope of their applications has widened over the years so has the need to obtain different structural motifs for thin films. A large variety of fabrication techniques are commonly employed to obtain these structures. Pulsed laser deposition (PLD) can be used to obtain films varying from extremely compact and only a few angstroms thick to micron thick porous structures. In this dissertation I introduce a model for predicting different structures as a function of laser parameters and deposition environments in a pulsed laser deposition system. This is followed by a comparison of simulated and experimentally obtained structures. I then use this model to obtain tailored structures suited for individual applications. One of the unique structures obtained using the PLD consists of vertically-aligned structures with nanoparticles as their building blocks. I investigate the superiority of this unique structure over random nanoparticle networks as photoanodes for titanium dioxide (TiO 2)-based dye-sensitized solar cells (DSSC). UV-Vis studies show that there is a 1.4 x enhancement of surface area for PLD-TiO2 photoanodes compared to the best sol-gel films. PLD-TiO2 incident photon to current efficiency (IPCE) values are comparable to 3 x thicker sol-gel films and nearly 92% absorbed photon to current efficiency (APCE) values have been observed for optimized structures. I also examine the suitability of PLD-synthesized niobium oxide (Nb2O5) and tantalum-doped titanium oxide (Ta: TiO2) as photoanode materials. For optimized PLD-Nb2 O5 based DSSCs IPCE values up to 40%, APCE values around 90% and power conversion efficiency of 2.41% were obtained. DSSCs made of PLD-Ta:TiO2 show enhanced photocurrents as well photo efficiency over those based

  19. Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

    SciTech Connect

    Sethi, Guneet; Sunal, Paul; Horn, Mark W.; Lanagan, Michael T.

    2009-05-15

    Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2{theta} scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr{sub 2}O. When the sputtering oxygen content of these films is increased above 25%, monoclinic-ZrO{sub 2} phase is stabilized in the films and the deposition rate decreases. However, in the case of rf sputtering, an additional peak corresponding to tetragonal phase of ZrO{sub 2} is observed. The sputtering parameters were related to physical parameters such as sputtering mode, ion energy, and substrate temperature, which influence crystallinity.

  20. Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry

    NASA Astrophysics Data System (ADS)

    Anis, Allagui; Mohammad, Ali Abdelkareem; Hussain, Alawadhi; Ahmed, S. Elwakil

    2016-02-01

    Recent years have shown an increased interest in developing manufacturing processes for graphene and its derivatives that consider the environmental impact and large scale cost-effectiveness. However, today’s most commonly used synthesis routes still suffer from their excessive use of harsh chemicals and/or the complexity and financial cost of the process. Furthermore, the subsequent transfer of the material onto a substrate makes the overall process even more intricate and time-consuming. Here we describe a single-step, single-cell preparation procedure of metal-supported reduced graphene oxide (rGO) using the principle of bipolar electrochemistry of graphite in deionized water. Under the effect of an electric field between two stainless steel feeder electrodes, grapheme layers at the anodic pole of the wireless graphite were oxidized into colloidal dispersion of GO, which migrated electrophoretically towards the anodic side of the cell, and deposited in the form of rGO (d(002) = 0.395 nm) by van der Waals forces. For substrates chemically more susceptible to the high anodic voltage, we show that the electrochemical setup can be adapted by placing the latter between the wireless graphite and the stainless steel feeder anode. This method is straightforward, inexpensive, environmentally-friendly, and could be easily scaled up for high yield and large area production of rGO thin films.

  1. Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry.

    PubMed

    Anis, Allagui; Mohammad, Ali Abdelkareem; Hussain, Alawadhi; Ahmed, S Elwakil

    2016-01-01

    Recent years have shown an increased interest in developing manufacturing processes for graphene and its derivatives that consider the environmental impact and large scale cost-effectiveness. However, today's most commonly used synthesis routes still suffer from their excessive use of harsh chemicals and/or the complexity and financial cost of the process. Furthermore, the subsequent transfer of the material onto a substrate makes the overall process even more intricate and time-consuming. Here we describe a single-step, single-cell preparation procedure of metal-supported reduced graphene oxide (rGO) using the principle of bipolar electrochemistry of graphite in deionized water. Under the effect of an electric field between two stainless steel feeder electrodes, grapheme layers at the anodic pole of the wireless graphite were oxidized into colloidal dispersion of GO, which migrated electrophoretically towards the anodic side of the cell, and deposited in the form of rGO (d(002) = 0.395 nm) by van der Waals forces. For substrates chemically more susceptible to the high anodic voltage, we show that the electrochemical setup can be adapted by placing the latter between the wireless graphite and the stainless steel feeder anode. This method is straightforward, inexpensive, environmentally-friendly, and could be easily scaled up for high yield and large area production of rGO thin films. PMID:26883173

  2. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films.

    PubMed

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-01-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp(2) clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

  3. Effective contact resistance of zinc-tin oxide-based thin film transistors.

    PubMed

    Kang, Youjin; Han, Dongsuk; Park, Jaehyung; Shin, Sora; Choi, Duckkyun; Park, Jongwan

    2014-11-01

    We investigated different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on amorphous zinc-tin oxide (ZTO) semiconductors. The transfer length, channel conductance, and effective contact resistance between the S/D electrodes and the a-ZTO channel layer were examined. Total ON resistance (R(T)), transfer length (L(T)) and effective contact resistance (R(c-eff)) were extracted by the well-known transmission-line method (TLM) using a series of TFTs with different channel lengths. When the width of ZTO channel layer was fixed as 50 μm, the lengths were varying from 10 to 50 μm. The channel layer and S/D electrode were defined by lift-off process and for the S/D electrodes, indium-tin oxide (ITO), Cu, and Mo were used. The resistivity and work function values of electrode materials were considered when selected as candidates for S/D electrodes of ZTO-TFTs. The results showed that the ZTO-TFTs with Mo S/D electrodes had the lowest effective contact resistance indicating that ZTO-TFTs with Mo electrodes have better electrical performance compared to others. PMID:25958489

  4. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    PubMed Central

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-01-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

  5. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  6. Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

    SciTech Connect

    Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Drawl, William R.; Allara, David L.; Ashok, S.; Horn, Mark W.; Bharadwaja, S. S. N.

    2011-11-15

    Cathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was investigated to correlate the structural and electrical properties of the resultant vanadium oxide thin films within the framework of Berg's model [Berg et al., J. Vac. Sci. Technol. A 5, 202 (1987)]. The process hysteresis during reactive pulsed dc sputtering of a vanadium metal target was monitored by measuring the cathode (target) current under different total gas flow rates and oxygen-to-argon ratios for a power density of {approx}6.6.W/cm{sup 2}. Approximately 20%-25% hysteretic change in the cathode current was noticed between the metallic and oxidized states of the V-metal target. The extent of the hysteresis varied with changes in the mass flow of oxygen as predicted by Berg's model. The corresponding microstructure of the films changed from columnar to equiaxed grain structure with increased oxygen flow rates. Micro-Raman spectroscopy indicates subtle changes in the film structure as a function of processing conditions. The resistivity, temperature coefficient of resistance, and charge transport mechanism, obeying the Meyer-Neldel relation [Meyer and Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)], were correlated with the cathode current hysteric behavior.

  7. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K.; Babu, R. Ramesh; Sethuraman, K.

    2016-05-01

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO3 in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V2O5 and V4O7. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10-3 lin.-2m-4 and 1.7263 × 1014 lin.m-2. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  8. Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

    NASA Astrophysics Data System (ADS)

    Bouanane, I.; Kabir, A.; Boulainine, D.; Zerkout, S.; Schmerber, G.; Boudjema, B.

    2016-07-01

    Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

  9. Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

    NASA Astrophysics Data System (ADS)

    Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

    2016-05-01

    Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

  10. Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

    NASA Astrophysics Data System (ADS)

    Bouanane, I.; Kabir, A.; Boulainine, D.; Zerkout, S.; Schmerber, G.; Boudjema, B.

    2016-04-01

    Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

  11. Reduced Graphene Oxide Thin Film on Conductive Substrates by Bipolar Electrochemistry

    PubMed Central

    Anis, Allagui; Mohammad, Ali Abdelkareem; Hussain, Alawadhi; Ahmed, S. Elwakil

    2016-01-01

    Recent years have shown an increased interest in developing manufacturing processes for graphene and its derivatives that consider the environmental impact and large scale cost-effectiveness. However, today’s most commonly used synthesis routes still suffer from their excessive use of harsh chemicals and/or the complexity and financial cost of the process. Furthermore, the subsequent transfer of the material onto a substrate makes the overall process even more intricate and time-consuming. Here we describe a single-step, single-cell preparation procedure of metal-supported reduced graphene oxide (rGO) using the principle of bipolar electrochemistry of graphite in deionized water. Under the effect of an electric field between two stainless steel feeder electrodes, grapheme layers at the anodic pole of the wireless graphite were oxidized into colloidal dispersion of GO, which migrated electrophoretically towards the anodic side of the cell, and deposited in the form of rGO (d(002) = 0.395 nm) by van der Waals forces. For substrates chemically more susceptible to the high anodic voltage, we show that the electrochemical setup can be adapted by placing the latter between the wireless graphite and the stainless steel feeder anode. This method is straightforward, inexpensive, environmentally-friendly, and could be easily scaled up for high yield and large area production of rGO thin films. PMID:26883173

  12. Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

    SciTech Connect

    Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

    2009-02-04

    Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H{sub 2}O vapors from as-deposited Cd(O{sub 2}){sub 0.88}(OH){sub 0.24} were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10{sup -2} to 10{sup -3} {omega} cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing.

  13. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-03-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  14. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS

    SciTech Connect

    Nguyen Minh; Kurt Montgomery

    2004-10-01

    This report summarizes the work performed by Hybrid Power Generation Systems, LLC during the Phases I and II under Contract DE-AC26-00NT40705 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Tape Calendering Manufacturing Process For Multilayer Thin-Film Solid Oxide Fuel Cells''. The main objective of this project was to develop the manufacturing process based on tape calendering for multilayer solid oxide fuel cells (SOFC's) using the unitized cell design concept and to demonstrate cell performance under specified operating conditions. Summarized in this report is the development and improvements to multilayer SOFC cells and the unitized cell design. Improvements to the multilayer SOFC cell were made in electrochemical performance, in both the anode and cathode, with cells demonstrating power densities of nearly 0.9 W/cm{sup 2} for 650 C operation and other cell configurations showing greater than 1.0 W/cm{sup 2} at 75% fuel utilization and 800 C. The unitized cell design was matured through design, analysis and development testing to a point that cell operation at greater than 70% fuel utilization was demonstrated at 800 C. The manufacturing process for both the multilayer cell and unitized cell design were assessed and refined, process maps were developed, forming approaches explored, and nondestructive evaluation (NDE) techniques examined.

  15. Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics.

    PubMed

    Chandra, R Devi; Rao, Manohar; Zhang, Keke; Prabhakar, Rajiv Ramanujam; Shi, Chen; Zhang, Jie; Mhaisalkar, Subodh G; Mathews, Nripan

    2014-01-22

    Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm(2)/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors. PMID:24380364

  16. Optical characterization and electrochemical behavior of electrochromic windows using magnetron sputter deposition Tungsten Oxide and (1-x) WO 3xTiO II thin films

    NASA Astrophysics Data System (ADS)

    Li, Zhuying; Liu, Zuli; Yao, Kailun; Song, Yusu

    2006-02-01

    Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic devices (ECDs) exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission [1]. These devices with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic windows using magnetron sputter deposition tungsten oxide thin films and titanium oxide doped tungsten oxide thin films are investigated. From the UV region of the transmittance spectra, the band gap energy from the fundamental absorption edge can be determined. And the impedance of these thin films in 1 mol LiClO 4 propylene carbonate electrolyte (LIPC) are measured and analysed. Equivalent circuit of thin film impedances, and correlative resistances and constant phase angle element are gained. SEM and XRD of the tungsten oxide thin films and (1-x) WO 3xTiO II thin films are studied. These performance characteristics make tungsten oxide thin films and titanium oxide doped tungsten oxide thin films materials suitable for electrochromic windows applications.

  17. Impact of Nanosize on Supercapacitance: Study of 1D Nanorods and 2D Thin-Films of Nickel Oxide.

    PubMed

    Patil, Ranjit A; Chang, Cheng-Ping; Devan, Rupesh S; Liou, Yung; Ma, Yuan-Ron

    2016-04-20

    We synthesized unique one-dimensional (1D) nanorods and two-dimensional (2D) thin-films of NiO on indium-tin-oxide thin-films using a hot-filament metal-oxide vapor deposition technique. The 1D nanorods have an average width and length of ∼100 and ∼500 nm, respectively, and the densely packed 2D thin-films have an average thickness of ∼500 nm. The 1D nanorods perform as parallel units for charge storing. However, the 2D thin-films act as one single unit for charge storing. The 2D thin-films possess a high specific capacitance of ∼746 F/g compared to 1D nanorods (∼230 F/g) using galvanostatic charge-discharge measurements at a current density of 3 A/g. Because the 1D NiO nanorods provide more plentiful surface areas than those of the 2D thin-films, they are fully active at the first few cycles. However, the capacitance retention of the 1D nanorods decays faster than that of the 2D thin-films. Also, the 1D NiO nanorods suffer from instability due to the fast electrochemical dissolution and high nanocontact resistance. Electrochemical impedance spectroscopy verifies that the low dimensionality of the 1D NiO nanorods induces the unavoidable effects that lead them to have poor supercapacitive performances. On the other hand, the slow electrochemical dissolution and small contact resistance in the 2D NiO thin-films favor to achieve high specific capacitance and great stability. PMID:27028491

  18. [X-ray fluorescence spectrometrlc determination of nine heavy rare earth elements in the enriched mixture of thulium oxide, ytterbium oxide and lutecium oxide by asming thin film technique].

    PubMed

    Li, B; Luo, C; Liu, Q

    1997-04-01

    A method for the determination of nine heavy rare earth elements in the enriched mixture of thulium oxide ytterbium oxide and lutecium oxide by XRF method has been studied in this poper. The samples were prepared by ashing thin film. This method is characterized as it is low cost, economic and simple in standards preparation, and standards can be easily preserved. The accuracy and precision of the results were satisfactory for the demands of prodnction. PMID:15810400

  19. Synthesis and characterization of transparent conducting indium iron oxide bulk and thin film materials

    NASA Astrophysics Data System (ADS)

    Fahed, Charbel T.

    2009-12-01

    In this dissertation, solid solutions of indium-iron oxide (In2-xFexO3) with varying compositions were prepared and a new ultra-fast microwave method was used for deposition of thin films of this material. Non-destructive characterization methods were used for studying these transparent conducting oxide (TCO) materials. In this work, the linear thermal expansion coefficients of bulk In 2-xFexO3 have been determined using high resolution x-ray diffraction measurements. The addition of Fe2O3 to In2O3 resulted in the formation of solid solutions in body centered cubic phase. The thermal expansion coefficients for solid solutions of In2-xFexO3 showed increased values in comparison to that of pure In2O3 phase. The study of thermal properties of these TCO materials is crucial for their potential applications in photovoltaic and spintronic devices operating at various temperatures. In addition, the bulk samples of In2-xFexO 3 were studied for their structural, transport, and magnetic properties, as a function of composition. The lattice parameters of the solid solutions decrease with increasing Fe-content. The four-probe electrical measurements showed reduced conductivities for higher Fe compositions. The magnetic data displayed ferromagnetism in these solid solutions, and that can be attributed to the presence of trace amounts of Fe2O3 or Fe 3O4. These results might be important for the use of TCOs in spintronic applications as well as structural materials such as ceramic coatings intended to withstand harsh environments. Thin films of Indium-iron oxide compositions were deposited by using ultra-fast microwave heating. This is a new method of deposition of TCOs that has never been done before. The advantage of microwave heating deposition over other deposition techniques is that it is extremely fast and can be used for materials of high evaporation temperature. In this work, the deposition was done in 50-120 seconds at 1950-2000°C. Characteristics of these transparent

  20. Plasma-enhanced atomic layer deposition zinc oxide for multifunctional thin film electronics

    NASA Astrophysics Data System (ADS)

    Mourey, Devin A.

    A novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process has been used to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200°C. Weak oxidant PEALD provides a simple, fast deposition process which results in uniform, conformal coatings and highly crystalline, dense ZnO thin films. These films and resulting devices have been compared with those prepared by spatial atomic layer deposition (SALD) throughout the work. Both PEALD and SALD ZnO TFTs have high field-effect mobility (>20 cm 2/V·s) and devices with ALD Al2O3 passivation can have excellent bias stress stability. Temperature dependent measurements of PEALD ZnO TFTs revealed a mobility activation energy < 5 meV and can be described using a simple percolation model with a Gaussian distribution of near-conduction band barriers. Interestingly, both PEALD and SALD devices operate with mobility > 1 cm2/V·s even at temperatures < 10 K. The effects of high energy irradiation have also been investigated. Devices exposed to 1 MGy of gamma irradiation showed small threshold voltage shifts (<2 V) which were fully recoverable with short (1 min) low-temperature (200°C) anneals. ZnO TFTs exhibit a range of non-ideal behavior which has direct implications on how important parameters such as mobility and threshold voltage are quantified. For example, the accumulation-dependent mobility and contact effects can lead to significant overestimations in mobility. It is also found that self-heating plays and important role in the non-ideal behavior of oxide TFTs on low thermal conductivity substrates. In particular, the output conductance and a high current device runaway breakdown effect can be directly ascribed to self-heating. Additionally, a variety of simple ZnO circuits on glass and flexible substrates were demonstrated. A backside exposure process was used to form gate-self-aligned structures with reduced parasitic capacitance and

  1. Physical and Material Properties of Yttrium Barium Copper Oxide High Critical Temperature Superconducting Thin Films.

    NASA Astrophysics Data System (ADS)

    Ma, Qiyuan

    1990-01-01

    A simple method of using layered structures and rapid thermal annealing to produce Y_1 Ba_2 Cu_3 O_{7-x} (YBCO) superconducting thin films is presented. Material properties of the films depend strongly on the processing conditions, the film stoichiometry, and the substrates. The films with critical temperature (T_{ rm c}) higher than liquid nitrogen temperature (77 K) have been made on various substrates including magnesium oxide, sapphire, and silicon. The best film was obtained on a MgO substrate with T_{rm c} of 84 K. Silicon diffusion and reaction with oxygen during a high temperature anneal degrade the superconductivity of the film on a Si substrate. Using a buffer layer of gold, the Si-YBCO interaction is greatly reduced. Typical resistivity of the film shows a linear temperature dependence which may be attributed to an electron -phonon interaction. Anisotropic resistance behavior has been observed due to the layered structures. Different metal contacts to the YBCO films have been used to study the chemical and electrical properties of metal-YBCO film interfaces. Gold has been found nonreactive to YBCO film, thus, it has the lowest contact resistivity. Near the T_{rm c}, the contact resistivity of a Au-YBCO contact approaches zero. This may be due to the proximity effect. Other metals such as Pt, Pd, Sn and Ti, react with the YBCO film and form thin oxide layers at the interfaces. The oxide layer acts as an insulating barrier which forbids the proximity effect and causes a large contact resistivity. The structural and electrical properties of the Si-YBCO intermixed film have been studied for different thicknesses of the silicon layers. A novel patterning technique of using Si-YBCO intermixing has been developed for fabricating the YBCO superconducting device structures. A superconductor sample has a critical current value I _{rm c}. Below the I _{rm c} the material is superconducting, and above I_{rm c} the sample has a finite resistance. Based on this effect

  2. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Xu, Runshen

    , ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

  3. The nano-composite nature of vanadium oxide thin films for use in infrared microbolometers

    NASA Astrophysics Data System (ADS)

    Gauntt, Bryan Douglas

    2011-12-01

    The current generation of portable, un-cooled infrared imaging devices utilizes thin-film materials with large thermal coefficients of resistivity. Incoming photons are absorbed by the material, converted into heat, and result in a decrease in the resistivity of the thermal sensing layer. Vanadium oxide thin films are used in the majority of these devices as they typically have very large thermal coefficients of resistivity with low noise characteristics. In the work reported here, reactive pulsed DC sputtering was used to grow a systematic series of vanadium oxide thin films with resistivity ranging from 1 x 10-3 to 6.8 x 104 Ohm cm and TCR varying from 0 to 4% K-1. Throughout the parameter space studied, a transition from amorphous to nano-crystalline growth was observed. Films in the range of interest for a microbolometer, i.e. 1 x 10-3 to 10 Ohm cm, contain the face-centered cubic (FCC) VO x (0.8 < x < 1.3) phase. Films with larger resistivity were found to be amorphous. Stoichiometry measurements via Rutherford backscattering spectroscopy place many of the nano-crystalline films outside of the FCC VO x phase field according to the bulk phase diagram. Electron diffraction in the transmission electron microscope confirmed the presence of a secondary oxygen-rich amorphous vanadium oxide phase. The oxygen-rich amorphous phase explains the discrepancy between the observed oxygen content, which is outside of the FCC VOx phase field, and the presence of FCC VOx, which is limited to a maximum oxygen content of x = 1.3. The resulting microstructure can be described as a nano-composite material composed of a low resistivity crystalline phase embedded in a high resistivity amorphous matrix. A mechanism has been proposed wherein the nano-composite structure of the films results from film growth in alternating oxygen deficient and oxygen rich regions in the chamber. While in the oxygen deficient region the nano-crystalline phase grows preferentially, and while in the

  4. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    SciTech Connect

    Kizu, Takio E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Miyanaga, Miki; Awata, Hideaki; Nabatame, Toshihide

    2015-09-28

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  5. A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

    NASA Technical Reports Server (NTRS)

    Bujor, M.; Larson, L. A.; Poppa, H.

    1982-01-01

    The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

  6. Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

    NASA Astrophysics Data System (ADS)

    Jacq, S.; Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Sharaiha, A.

    2016-04-01

    We have synthesized the composition x = 0.01 of the (Sr1-xLax)2(Ta1-xTix)2O7 solid solution, mixing the ferroelectric perovskite phases Sr2Ta2O7 and La2Ti2O7. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N2,O2) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr0.99La0.01) (Ta0.99Ti0.01)O2N, characterized by a band gap Eg = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO3 substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10-3. In oxygen-rich conditions (vol.%N2 ≤ 15%), (110) epitaxial (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 oxides films are deposited, associated to a larger band gap value (Eg = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10-3. For 20 ≤ vol.% N2 ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.

  7. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  8. Maria Goeppert-Mayer Award Talk: Novel Magnetism and Transport in Complex Oxide Thin Films, Multilayers and Nanostructures

    NASA Astrophysics Data System (ADS)

    Suzuki, Yuri

    2005-03-01

    In epitaxial complex oxide systems, epitaxial strain, cation substitution and nanofabrication are just some ways in which their magnetic, electronic and optical properties may be tuned. In addition, their surfaces and interfaces provide a rich playground for the exploration of novel magnetic properties not found in the bulk constituents and the development of functional interfaces to be incorporated into technological applications. We have probed magnetism in complex oxide materials through studies of epitaxial oxide thin films, nanostructures and junction devices. With our ability to control oxide film growth as well as our expertise in nanofabrication, we have been able to study the effects of surfaces and interfaces on magnetism in ultra-thin magnetic oxide films and magnetic oxide nanostructures. For example, we have found that the nature of local magnetic structure in submicron islands of colossal magnetoresistance (CMR) material reveals the importance of shape anisotropy as well as magnetostriction in determining the micromagnetics in such small CMR structures. We have also studied epitaxial oxide trilayer junctions composed of magnetite (Fe3O4) and doped manganite (La0.7Sr0.3MnO3) in which we have confirmed the theoretically predicted negative spin polarization of Fe3O4. Transport through the barrier can be understood in terms of hopping transport through localized states that preserves electron spin information.

  9. Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

    NASA Astrophysics Data System (ADS)

    Bharadwaja, S. S. N.; Rajashekhar, A.; Ko, S. W.; Qu, W.; Motyka, M.; Podraza, N.; Clark, T.; Randall, C. A.; Trolier-McKinstry, S.

    2016-01-01

    Excimer laser assisted re-oxidation for reduced, crystallized BaTiO3 thin films on Ni-foils was investigated. It was found that the BaTiO3 can be re-oxidized at an oxygen partial pressure of ˜50 mTorr and substrate temperature of 350 °C without forming a NiOx interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mVrms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO3 thin films can be re-oxidized to an oxygen stoichiometry close to ˜3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiOx formation between the BaTiO3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001]C and [111]C BaTiO3 single crystals indicate that the re-oxidation of BaTiO3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients.

  10. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

    PubMed

    Park, Won-Tae; Son, Inyoung; Park, Hyun-Woo; Chung, Kwun-Bum; Xu, Yong; Lee, Taegweon; Noh, Yong-Young

    2015-06-24

    Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s). PMID:26043206

  11. Fabrication of Cu2ZnSnS4 thin films using oxides nanoparticles ink for solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Guilin; Yuan, Chenchen; Liu, Jiwan; Huang, Zhigao; Chen, Shuiyuan; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

    2015-02-01

    Oxides nanoparticles-based process is one of the successful approaches to CuIn1-xGaxSe2 (CIGS) formation. To explore systematically the possibility of application of the similar methods to high quality Cu2ZnSnS4 (CZTS), an oxides nanoparticles-based process for preparation of CZTS films is described. The CZTS films are prepared by sulfurizing oxides precursor. Thermodynamic appreciation of sulfurization of oxides precursor is first studied. The development of the CZTS formation with increasing temperature is also investigated. Through optimizing the sulfurization, phase-pure CZTS films with very large grains are obtained. The loss of tin can be avoided, due to the stability of oxides. Finally, preliminary CZTS thin-film solar cells with efficiencies of 1.47% have been fabricated. This study provides basis for low-cost and large area CZTS solar cells.

  12. Physical properties of silver oxide thin films by pulsed laser deposition: effect of oxygen pressure during growth

    NASA Astrophysics Data System (ADS)

    Ravi Chandra Raju, N.; Jagadeesh Kumar, K.; Subrahmanyam, A.

    2009-07-01

    Silver oxide thin films have potential applications in ultra-high density optical non-volatile memories and in fluorescence imaging. In this paper, the physical properties of silver oxide thin films prepared at room temperature by the pulsed laser deposition (PLD) technique with varying oxygen pressure during growth are reported. The oxygen pressure in the growth chamber is varied between 9 and 50 Pa. The x-ray diffraction (XRD) analysis showed that all the films were polycrystalline. With increasing oxygen pressure in the growth chamber, it is observed that (i) the hexagonal Ag2O transforms to monoclinic AgO, (ii) the grain size in the film increases from 59 to 200 nm, (iii) the surface roughness of the film increases from 9 to 42 nm, (iv) the resistivity of the films increases from 1 to 4 × 104 Ω m, (v) the surface work function of the films increases from 5.47 to 5.61 eV and (vi) the optical band gap of AgO thin films decreases from 1.01 to 0.93 eV. Raman spectroscopy on AgO thin films shows low wave number peaks corresponding to the stretching vibration of Ag-O bonds. This study shows that single phase AgO thin films, a requirement for plasmonic devices, can be prepared at room temperature by the PLD technique with an oxygen pressure of 20 Pa.

  13. Preparation of transparent and conductive multicomponent Zn-In-Sn oxide thin films by vacuum arc plasma evaporation

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Tsukada, Satoshi; Minamino, Youhei; Miyata, Toshihiro

    2005-07-01

    This article describes the preparation of transparent conducting oxide (TCO) thin films by a vacuum arc plasma evaporation (VAPE) method using multicomponent oxide materials composed of any combination of two of the following binary compounds: ZnO, In2O3, and SnO2. The resulting TCO thin films were prepared with high deposition rates with the desired chemical composition in the ZnO-In2O3, In2O3-SnO2, and SnO2-ZnO systems by altering the composition of the sintered oxide fragments used as the source materials. Minimum resistivities were obtained in amorphous In2O3-ZnO, SnO2-In2O3, and ZnO-SnO2 thin films that were prepared with a Zn content of about 8.5 at. %, an In content of about 46 at. %, and a Sn content of about 78 at. %, respectively. It was found that the electrical, optical and chemical properties in ZnO-SnO2 thin films prepared using the VAPE method could be controlled by altering the Sn content.

  14. Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

    NASA Astrophysics Data System (ADS)

    Bolse, Wolfgang

    2006-03-01

    Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-"nano-towers" of 2 μm height and 200 nm in diameter.

  15. Thin-film electrolytes for reduced temperature solid oxide fuel cells

    SciTech Connect

    Visco, S.J.; Wang, L.S.; De Souza, S.; De Jonghe, L.C.

    1994-11-01

    Solid oxide fuel cells produce electricity at very high efficiency and have very low to negligible emissions, making them an attractive option for power generation for electric utilities. However, conventional SOFC`s are operated at 1000{degrees}C or more in order to attain reasonable power density. The high operating temperature of SOFC`s leads to complex materials problems which have been difficult to solve in a cost-effective manner. Accordingly, there is much interest in reducing the operating temperature of SOFC`s while still maintaining the power densities achieved at high temperatures. There are several approaches to reduced temperature operation including alternative solid electrolytes having higher ionic conductivity than yttria stabilized zirconia, thin solid electrolyte membranes, and improved electrode materials. Given the proven reliability of zirconia-based electrolytes (YSZ) in long-term SOFC tests, the use of stabilized zirconia electrolytes in reduced temperature fuel cells is a logical choice. In order to avoid compromising power density at intermediate temperatures, the thickness of the YSZ electrolyte must be reduced from that in conventional cells (100 to 200 {mu}m) to approximately 4 to 10 {mu}m. There are a number of approaches for depositing thin ceramic films onto porous supports including chemical vapor deposition/electrochemical vapor deposition, sol-gel deposition, sputter deposition, etc. In this paper we describe an inexpensive approach involving the use of colloidal dispersions of polycrystalline electrolyte for depositing 4 to 10 {mu}m electrolyte films onto porous electrode supports in a single deposition step. This technique leads to highly dense, conductive, electrolyte films which exhibit near theoretical open circuit voltages in H{sub 2}/air fuel cells. These electrolyte films exhibit bulk ionic conductivity, and may see application in reduced temperature SOFC`s, gas separation membranes, and fast response sensors.

  16. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Schaefer, Michael; Schlaf, Rudy

    2015-08-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

  17. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    SciTech Connect

    Schaefer, Michael E-mail: schlaf@mail.usf.edu; Schlaf, Rudy E-mail: schlaf@mail.usf.edu

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  18. Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Motyka, M. A.; Gauntt, B. D.; Horn, M. W.; Dickey, E. C.; Podraza, N. J.

    2012-11-01

    Vanadium oxide (VOx) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 ± 6 and 2901 ± 30 Å thick, which were then optically and electrically characterized. The complex dielectric function spectra (ɛ = ɛ1 + iɛ2) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VOx samples. Significant changes in ɛ and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 Å of the top surface of the deposited film to become more electrically resistive as evidenced by variations in ɛ. Exposure of the VOx thin film to atmospheric conditions introduces a similar change in ɛ, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VOx films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

  19. Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

    SciTech Connect

    Yang, Lei; Han, Jiecai; Zhu, Jiaqi; Zhu, Yuankun; Schlaberg, H.Inaki

    2013-11-15

    Graphical abstract: IR transmittance of various transparent conductive materials (RYO films grown under RT, 400 °C and 600 °C, ITO films [2], Carbon Nano tube films [11], metal/dielectric multilayers [12]). - Highlights: • Y{sub 2}O{sub 3}:Ru (RYO) films were prepared on ZnS substrates by reactive magnetron sputtering. • Ru doping significantly decreases the resistivity and extends the transparent range. • Optical and electrical properties of RYO films can be tuned by substrate temperatures. • The RYO films exhibit excellent far-IR transmittance and electrical property. - Abstract: Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10{sup −3} Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

  20. Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle-based thin-film transistors.

    PubMed

    Faber, Hendrik; Hirschmann, Johannes; Klaumünzer, Martin; Braunschweig, Björn; Peukert, Wolfgang; Halik, Marcus

    2012-03-01

    Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V(-1) s(-1) and the threshold voltage was lowered. PMID:22391057

  1. High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

    NASA Technical Reports Server (NTRS)

    Gregory, Otto J.; Cooke, James D.; Bienkiewicz, Joseph M.

    1998-01-01

    A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage

  2. Nanoporous metal oxides thin-films as "chemical reactive layers" for magnetoelastic sensors

    NASA Astrophysics Data System (ADS)

    Zhang, Rong

    Freestanding magnetoelastic sensors are good candidates for in situ analysis of gases. After coating magnetoelastic ribbons with suitable nanoporous thin films, chemical reactive layers (CRL), sensitivity and specificity of the sensor for targeted gas increases. This thesis addresses two major aspects concerning magnetoelastic sensing of gases. The first aspect relates to developing methodology to measure mass of gas adsorbed from frequency shifts. Effective Young's modulus of the sensor coated with porous thin-films suffers large changes upon mass loading. This study demonstrates that changes in Young's modulus produced upon mass loading can be eliminated from the relationship between the magnitude of mass loaded and shifts in resonant frequency using the Two Different Length Sensors method. Sensitivity of the sensor not only depends on its properties but also depends on the nature of material being loaded and on its mass. Results show that sensitivity for the same sensor can range between 214 Hz/mg for mass loads of Au to 438,809 Hz/mg for acetone. The second aspect of this research deals with the development of CRL for ethylene sensing. Nanoporous metal oxides (TiO2 and SiO 2) surface modified with metals Pt(0) and metal ions Pt(II), Pd(II), Ag(I) were synthesized and evaluated as potential candidates. These materials were evaluated as ethylene adsorbents. We also studied the gain in weight upon ethylene adsorption and the nature of their chemical interaction with ethylene. Results from these studies showed that ethylene is completely mineralized (CO2+H2O) upon exposure to Pt(0)-modified TiO2 cermets. TiO2 modified with Pd(II) and Pt(II) oxidizes a fraction of ethylene to carboxylic and carboxylate species, causing adsorption of ethylene to be partially irreversible at room temperature. Ag(I)-doped materials react with ethylene to form surface complexes with sigma bonding character. Adsorption of ethylene is reversible process in this case. While the adsorption

  3. Defect-mediated magnetism of transition metal doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Roberts, Bradley Kirk

    Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

  4. Oxidation Temperature Dependence of the Structural, Optical and Electrical Properties of SnO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Boulainine, D.; Kabir, A.; Bouanane, I.; Boudjema, B.; Schmerber, G.

    2016-05-01

    In this work, SnO2 thin films were prepared by thermal oxidation of Sn in an oxygen-rich atmosphere. The Sn thin films were deposited onto Si (100) substrates by vacuum evaporation, and the properties of the oxide films were investigated as a function of the oxidation temperature. The x-ray diffraction patterns showed that the obtained films have a polycrystalline structure with a preferential orientation along the (101) plane. The film oxidized at 500°C was not completely oxidized. The grain growth of the films was controlled by the pore mobility process. The UV-Vis reflectance spectra revealed an increase in both the refractive index and density of the films, reflecting the densification of the investigated films. The band gap energy decreased from 3.78 eV to 3.62 eV, caused by an increase in charge carrier density due to increased grain size. The increase in film thickness can be explained by the upward diffusion of tin atoms into the oxide film surface and the downward diffusion of oxygen atoms into the metal. The increase in the O/Sn ratio, determined from Rutherford backscattering spectroscopy, indicated enhanced material stoichiometry. Electrical resistivity decreased from 9.7 × 10-3 Ω cm to 1.7 × 10-4 Ω cm, which was attributed to the increased grain size.

  5. The low temperature oxidation of lithium thin films on HOPG by O2 and H2O

    NASA Astrophysics Data System (ADS)

    Wulfsberg, Steven M.; Koel, Bruce E.; Bernasek, Steven L.

    2016-09-01

    Lithiated graphite and lithium thin films have been used in fusion devices. In this environment, lithiated graphite will undergo oxidation by background gases. In order to gain insight into this oxidation process, thin (< 15 monolayer (ML)) lithium films on highly ordered pyrolytic graphite (HOPG) were exposed to O2(g) and H2O(g) in an ultra-high vacuum chamber. High resolution electron energy loss spectroscopy (HREELS) was used to identify the surface species formed during O2(g) and H2O(g) exposure. Auger electron spectroscopy (AES) was used to obtain the relative oxidation rates during O2(g) and H2O(g) exposure. AES showed that as the lithium film thickness decreased from 15 to 5 to 1 ML, the oxidation rate decreased for both O2(g) and H2O(g). HREELS showed that a 15 ML lithium film was fully oxidized after 9.7 L (L) of O2(g) exposure and Li2O was formed. HREELS also showed that during initial exposure (< 0.5 L) H2O(g), lithium hydride and lithium hydroxide were formed on the surface of a 15 ML lithium film. After 0.5 L of H2O(g) exposure, the H2O(g) began to physisorb, and after 15 L of H2O(g) exposure, the 15 ML lithium film was not fully oxidized.

  6. DCEMS Study of Thin Oxide Layers and Interface of Stainless Steel Films Deposited by Sputtering Austenitic AISI304

    NASA Astrophysics Data System (ADS)

    Nomura, K.; Takahashi, K.; Takeda, M.; Shimizu, K.; Habasaki, H.; Kuzmann, E.

    2004-12-01

    Thin stainless steel films were deposited on surface oxidized Si plate using austenitic AISI304 stainless steel as target with a RF magnetron Ar sputtering method. The deposited films and the oxidized films with about 15 nm in thickness were characterized by depth selective conversion electron Mössbauer spectroscopy (DCEMS) using a 2π gas proportional counter. The as-deposited film consisted of ferromagnetic phase. The average hyperfine magnetic fields increased from 25 to 28 T by heating. A relative large amount of iron oxide (Fe2O3) was produced on the top surface layer upon heating at 400°C. After heating at 500°C the relative amount of iron oxide decreased and chromium oxide layers grew in the interface between the iron oxide and substrate layers. The ferromagnetic phase in the deposited stainless steel film was partially converted into austenitic phase at 500°C and largely at 600°C. DCEMS is effective for non-destructive characterization of both surface and interface layers of thin stainless steel films with several 10 nm thickness.

  7. Oxidation Temperature Dependence of the Structural, Optical and Electrical Properties of SnO2 Thin Films

    NASA Astrophysics Data System (ADS)

    Boulainine, D.; Kabir, A.; Bouanane, I.; Boudjema, B.; Schmerber, G.

    2016-08-01

    In this work, SnO2 thin films were prepared by thermal oxidation of Sn in an oxygen-rich atmosphere. The Sn thin films were deposited onto Si (100) substrates by vacuum evaporation, and the properties of the oxide films were investigated as a function of the oxidation temperature. The x-ray diffraction patterns showed that the obtained films have a polycrystalline structure with a preferential orientation along the (101) plane. The film oxidized at 500°C was not completely oxidized. The grain growth of the films was controlled by the pore mobility process. The UV-Vis reflectance spectra revealed an increase in both the refractive index and density of the films, reflecting the densification of the investigated films. The band gap energy decreased from 3.78 eV to 3.62 eV, caused by an increase in charge carrier density due to increased grain size. The increase in film thickness can be explained by the upward diffusion of tin atoms into the oxide film surface and the downward diffusion of oxygen atoms into the metal. The increase in the O/Sn ratio, determined from Rutherford backscattering spectroscopy, indicated enhanced material stoichiometry. Electrical resistivity decreased from 9.7 × 10-3 Ω cm to 1.7 × 10-4 Ω cm, which was attributed to the increased grain size.

  8. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Marikkannan, M.; Vishnukanthan, V.; Vijayshankar, A.; Mayandi, J.; Pearce, J. M.

    2015-02-01

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  9. A novel synthesis of tin oxide thin films by the sol-gel process for optoelectronic applications

    SciTech Connect

    Marikkannan, M.; Vishnukanthan, V.; Vijayshankar, A.; Mayandi, J.; Pearce, J. M.

    2015-02-15

    A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.

  10. Anisotropy, band-to-band transitions, phonon modes, and oxidation properties of cobalt-oxide core-shell slanted columnar thin films

    NASA Astrophysics Data System (ADS)

    Mock, Alyssa; Korlacki, Rafał; Briley, Chad; Sekora, Derek; Hofmann, Tino; Wilson, Peter; Sinitskii, Alexander; Schubert, Eva; Schubert, Mathias

    2016-02-01

    Highly ordered and spatially coherent cobalt slanted columnar thin films (SCTFs) were deposited by glancing angle deposition onto silicon substrates, and subsequently oxidized by annealing at 475 °C. Scanning electron microscopy, Raman scattering, generalized ellipsometry, and density functional theory investigations reveal shape-invariant transformation of the slanted nanocolumns from metallic to transparent metal-oxide core-shell structures with properties characteristic of spinel cobalt oxide. We find passivation of Co-SCTFs yielding Co-Al2O3 core-shell structures produced by conformal deposition of a few nanometers of alumina using atomic layer deposition fully prevents cobalt oxidation in ambient and from annealing up to 475 °C.

  11. Trap Profiling Based on Frequency Varied Charge Pumping Method for Hot Carrier Stressed Thin Gate Oxide Metal Oxide Semiconductors Field Effect Transistors.

    PubMed

    Choi, Pyungho; Kim, Hyunjin; Kim, Sangsub; Kim, Soonkon; Javadi, Reza; Park, Hyoungsun; Choi, Byoungdeog

    2016-05-01

    In this study, pulse frequency and reverse bias voltage is modified in charge pumping and advanced technique is presented to extract oxide trap profile in hot carrier stressed thin gate oxide metal oxide semiconductor field effect transistors (MOSFETs). Carrier trapping-detrapping in a gate oxide was analyzed after hot carrier stress and the relationship between trapping depth and frequency was investigated. Hot carrier induced interface traps appears in whole channel area but induced border traps mainly appears in above pinch-off region near drain and gradually decreases toward center of the channel. Thus, hot carrier stress causes interface trap generation in whole channel area while most border trap generation occurs in the drain region under the gate. Ultimately, modified charge pumping method was performed to get trap density distribution of hot carrier stressed MOSFET devices, and the trapping-detrapping mechanism is also analyzed. PMID:27483833

  12. Improvement of electrical and optical properties of molybdenum oxide thin films by ultralow pressure sputtering method

    SciTech Connect

    Sook Oh, Myeong; Seob Yang, Bong; Ho Lee, Jong; Ha Oh, Seong; Soo Lee, Ung; Jang Kim, Yoon; Joon Kim, Hyeong; Soo Huh, Myung

    2012-05-15

    In this work, we investigated the structural, electrical and optical properties of molybdenum oxide thin films deposited by the reactive dc magnetron sputtering method. The molybdenum oxide films were prepared at sputtering pressures ranging from 6.7 x 10{sup -1} to 6.7 x 10{sup -2} Pa. In order to promote their electrical conductivity, all the deposited MoO{sub x} films were annealed in Ar ambient at 450 deg. C for 8 h. The resistivity of the MoO{sub x} films varied from 10{sup -4} to 10{sup -2}{Omega} cm depending on the O{sub 2} content in the sputtering ambient. The lowering of the resistivity of the MoO{sub 2} films was mainly attributed to the formation of a monoclinic MoO{sub 2} polycrystalline phase. As the sputtering pressure decreased, the content of monoclinic polycrystalline MoO{sub 2} phase increased, resulting in low resistivity films. The formation of the dominant MoO{sub 2} phase at lower sputtering pressures was attributed to the stress induced crystallization. The post-deposition annealed (PDA) MoO{sub x} film, deposited at an ultralow sputtering pressure (6.7 x 10{sup -2} Pa) and O{sub 2} content of 40%, had an atomic ratio of O to Mo {approx_equal} 2.85 and was highly transparent and conductive: the transmittance in the visible wavelength range of 400-500 nm was about 73% and the resistivity was 1.05 x 10{sup -3}{Omega} cm. This result is superior to those of MoO{sub x} films epitaxially grown by the pulse laser deposition method.

  13. Novel enhancement of thin-form-factor galvanic cells: Probing halogenated organic oxidizers and metal anodes

    NASA Astrophysics Data System (ADS)

    Cardenas-Valencia, Andres M.; Adornato, Lori; Short, R. Timothy; Langebrake, Larry

    The work reported herein demonstrates a novel method to improve the overall performance of thin-form-factor galvanic cells, fabricated via micro-electromechanical systems (MEMS) processes. Use of solid, low cost, cyclic-halogenated, organic catholyte materials permits water activation of cells consisting of metal anode and catalytic platinum positive electrodes. Similar cells, employing aluminum and zinc anodes, have been activated using sodium hypochlorite (NaClO) solutions, i.e. bleach, in the past. The oxidizers chosen for this study (bromo-, chloro- and iodo-succinimides, and sodium dichloroisocyanuric acid) supply the cathode's oxy-halogenated ions when in contact with water. Zinc, magnesium and aluminum anodes are utilized to fabricate galvanic cells. A comparison between these anodes, coupled with various oxidizers, is included herein. Results using aluminum anode cells show that, even though the utilization efficiency of the catholyte reagents is low (faradic efficiencies between 16 and 19%), the performance of the new water-activated cells (6 cm × 6 cm × 0.25 cm) is superior when compared to those activated with bleach. For instance, operational lives of 6 h (activation with 10% NaClO solution) increase to more than 30 h using the new approach, with a 100-ohm-load. It is also shown that specific energies of 90-110 Wh kg -1 (calculated to include both reagent and packaging mass) could be obtained using the described approach with current draws between 10 and 20 mA. The specific energies obtained suggest that novel MEMS-type cells could have much broader application than low-current, bleach-activated cells.

  14. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  15. Impact of thin metal layer on the optical and electrical properties of indium-doped-tin oxide and aluminum-doped-zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Kumar, Melvin David; Park, Yun Chang; Kim, Joondong

    2015-06-01

    The distinguished transparent conductive oxide (TCO) layers like indium-doped-tin oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers were prepared in different combinations with and without thin Ni metal layer. The optical and electrical properties of prepared samples were analyzed and compared with the objective to understand the role and influence of the Ni layer in each TCO combination. The highest transmittance value of 91.49% was exhibited by prepared AZO layers. Even though if the transmittance of Ni inserting TCO layers was marginally reduced than that of the ordinary TCO samples, they exhibited balanced optical properties with enhanced electrical properties. Carrier concentration of indium doped tin-oxide and aluminum doped zinc oxide (ITO/AZO) bilayer sample is increased more than double the times when the Ni layer was inserted between ITO and AZO. Thin layer of Ni in between TCO layers reduced sheet resistance and offered substantial transmittance, so that the figure of merit (FOM) value of Ni embedding TCOs was greater than that of TCOs without Ni layer. The ITO/Ni/AZO combination provided optimum results in all the electrical properties. As compared to other TCO/metal combinations, the overall performance of ITO/Ni/AZO tri-layer combination was appreciable. These results show that the optical and electrical properties of TCO layers could be enhanced by inserting a Ni layer with optimum thickness in between them.

  16. Mechanical Flexibility of Zinc Oxide Thin-Film Transistors Prepared by Transfer Printing Method

    NASA Astrophysics Data System (ADS)

    Eun, K. T.; Hwang, W. J.; Sharma, B. K.; Ahn, J. H.; Lee, Y. K.; Choa, S. H.

    In the present study, we demonstrate the performance of Zinc oxide thin film transistors (ZnO TFTs) array subjected to the strain under high bending test and the reliability of TFTs was confirmed for the bending fatigue test of 2000 cycles. Initially, ZnO TFTs were fabricated on Si substrate and subsequently transferred on flexible PET substrate using transfer printing process. It was observed that when the bending radius reached ≥ 11 mm then cracks start to initiate first at SiO2 bridges, acting as interconnecting layers among individual TFT. Whatever the strain is applied to the devices, it is almost equivalently adopted by the SiO2 bridges, as they are relatively weak compared to rest of the part. The initial cracking of destructed SiO2 bridge leads to the secondary cracks to the ITO electrodes upon further increment of bending radius. Numerical simulation suggested that the strain of SiO2 layer reached to fracture level of 0.55% which was concentrated at the edge of SiO2 bridge layer. It also suggests that the round shape of SiO2 bridge can be more fruitful to compensate the stress concentration and to prevent failure of device.

  17. Optical properties of tungsten oxide thin films with protons intercalated during sputtering

    SciTech Connect

    Yamada, Y.; Tajima, K.; Bao, S.; Okada, M.; Yoshimura, K.; Roos, A.

    2008-03-15

    Tungsten oxide thin films with protons intercalated during deposition (H{sub x}WO{sub 3}) were prepared using reactive direct-current-magnetron sputtering in a gas mixture of argon, oxygen, and hydrogen. The as-deposited films fabricated under suitable conditions were colored due to the formation of tungsten bronze. The concentration of intercalated protons, given by the x values in H{sub x}WO{sub 3}, was evaluated by ejecting protons electrochemically from the films. The x value of the films prepared at a constant working pressure was found to be proportional to the hydrogen flow ratio during deposition. On the other hand, the x value of the films prepared at a constant hydrogen flow ratio decreased sharply with increasing working pressure during deposition. The dispersion of the extinction coefficient ({kappa}) of the films was estimated by analyzing the experimental spectra of {psi} and {delta} measured with spectroscopic ellipsometry using the model composed of a homogeneous tungsten bronze layer with an additional surface roughness layer. As a result of this analysis, the {kappa} value was found to increase sharply with the number of intercalated protons. There was a linear dependence between the {kappa} value and the x value for x<0.2, while for x>0.3, the absorption saturated. This indicates that it is possible to evaluate the x value of H{sub x}WO{sub 3} films using spectroscopic ellipsometry.

  18. Chromium and Ruthenium-Doped Zinc Oxide Thin Films for Propane Sensing Applications

    PubMed Central

    Gómez-Pozos, Heberto; González-Vidal, José Luis; Torres, Gonzalo Alberto; Rodríguez-Baez, Jorge; Maldonado, Arturo; de la Luz Olvera, María; Acosta, Dwight Roberto; Avendaño-Alejo, Maximino; Castañeda, Luis

    2013-01-01

    Chromium and ruthenium-doped zinc oxide (ZnO:Cr) and (ZnO:Ru) thin solid films were deposited on soda-lime glass substrates by the sol-gel dip-coating method. A 0.6 M solution of zinc acetate dihydrate dissolved in 2-methoxyethanol and monoethanolamine was used as basic solution. Chromium (III) acetylacetonate and Ruthenium (III) trichloride were used as doping sources. The Ru incorporation and its distribution profile into the films were proved by the SIMS technique. The morphology and structure of the films were studied by SEM microscopy and X-ray diffraction measurements, respectively. The SEM images show porous surfaces covered by small grains with different grain size, depending on the doping element, and the immersions number into the doping solutions. The sensing properties of ZnO:Cr and ZnO:Ru films in a propane (C3H8) atmosphere, as a function of the immersions number in the doping solution, have been studied in the present work. The highest sensitivity values were obtained for films doped from five immersions, 5.8 and 900, for ZnO:Cr and ZnO:Ru films, respectively. In order to evidence the catalytic effect of the chromium (Cr) and ruthenium (Ru), the sensing characteristics of undoped ZnO films are reported as well. PMID:23482091

  19. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  20. Structural, Morphological and Optical properties of Sputtered Nickel oxide Thin Films

    SciTech Connect

    Reddy, A. Mallikarjuna; Reddy, A. Sivasankar; Reddy, P. Sreedhara

    2011-10-20

    Nickel oxide (NiO) thin films have been deposited by dc reactive magnetron sputtering technique on glass substrates at various substrate temperatures in the range of 303 to 723 K. The influence of substrate temperature on structural, morphological, compositional and optical properties was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and spectrophotometer studies. The structural properties of the films were strongly influenced by the substrate temperature. From the microstructural studies, fine and uniform grains were grown with RMS roughness of 9.4 nm at substrate temperature of 523 K. The optical results indicated that the optical transmittance of the films increases with increasing substrate temperature up to 523 K, thereafter decreases. The optical band of the films increases with substrate temperature initially, thereafter decreased at higher temperatures. The Highest optical transmittance of 60 % and optical band gap of 3.82 eV was observed in the present study.