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Sample records for p-type hydrogenated nanocrystalline

  1. Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ambade, Swapnil B.; Mane, R. S.; Kale, S. S.; Sonawane, S. H.; Shaikh, Arif V.; Han, Sung-Hwan

    2006-12-01

    Nanocrystalline thin films of copper selenide have been grown on glass and tin doped-indium oxide substrates using chemical method. At ambient temperature, golden films have been synthesized and annealed at 200 °C for 1 h and were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy and UV-vis spectrophotometry techniques, respectively. Cu 2- xSe phase was confirmed by XRD pattern and spherical grains of 30 ± 4 - 40 ± 4 nm in size aggregated over about 130 ± 10 nm islands were seen by SEM images. Effect of annealing on crystallinity improvement, band edge shift and photoelectrochemical performance (under 80 mW/cm 2 light intensity and in lithium iodide electrolyte) has been studied and reported. Observed p-type electrical conductivity in copper selenide thin films make it a suitable candidate for heterojunction solar cells.

  2. Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing

    SciTech Connect

    Gu, S. S.; Hu, X. J.

    2013-07-14

    We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.

  3. Suppression of hydrogen diffusion at the hydrogen-induced platelets in p-type Czochralski silicon

    SciTech Connect

    Huang, Y.L.; Ma, Y.; Job, R.; Fahrner, W.R.

    2005-03-28

    Hydrogen diffusion in p-type Czochralski silicon is investigated by combined Raman spectroscope, scanning electron microscope, and spreading resistance probe measurements. Exposure of silicon wafers to rf hydrogen plasma results in the formation of platelets. The increase of hydrogenation duration leads to the growth of the platelets and the reduction of the hydrogen diffusivity. The large platelets grow faster than the small ones. The growth of the platelets is based on the capture of hydrogen. The dependence of the hydrogen diffusivity upon the average size of the platelets suggests that the indiffusion of hydrogen is suppressed by the platelets.

  4. Corrosion and hydrogen embrittlement of nanocrystalline nickel

    NASA Astrophysics Data System (ADS)

    Desai, Tapas

    Nanocrystalline (nc) materials have attracted the interest of the scientific community because of their unique physical and mechanical properties. However, limited research has been performed to analyze their electrochemical behavior. The majority of research in the field of electrochemical and corrosion behavior exists for electrodeposited nanocrystalline metals. This research studies the behavior of sputter-deposited nc Nickel films in corrosive and hydrogen environment by potentiodynamic polarization and microindentation. The surface morphology and composition of the samples was examined by Scanning Electron Microscopy and Energy Dispersive X-Ray spectroscopy. Bulk Ni samples exhibit mild passivation in 3.5 % NaCl solution. The surface reveals a fine distribution of small pits and numerous large pits. However, nc Ni films show a higher corrosion potential, but lower corrosion rate. This can be attributed to the rapid formation of a passive film to resist the corrosion, and better purity of sputtered films. A very uniform and periodic corrosion pattern is observed on the surface, without any pitting. In 0.1 N H2 SO4 solution, active dissolution of Ni was observed in both bulk and nanocrystalline samples. This is due to the absence of passivation for Ni in this environment. Nc Ni shows a higher corrosion rate and higher anodic corrosion potential. This behavior is attributed to a higher density of grain boundaries that act as a catalyst to the hydrogen reduction reaction and increase the corrosion rate. Effect of electrochemically charged hydrogen was observed for bulk and nanocrystalline Nickel. Bulk Ni displayed a slight increase in hardness and signs of hydrogen induced plastic deformation. On the other hand, the nanocrystalline Ni shows brittle failure by buckling and spalling. This is attributed to its limited ductility and the high density that act as preferred sites for hydrogen adsorption and subsequently enhance hydrogen diffusion, leading to

  5. LIGHT-WEIGHT NANOCRYSTALLINE HYDROGEN STORAGE MATERIALS

    SciTech Connect

    S. G. Sankar; B. Zande; R.T. Obermyer; S. Simizu

    2005-11-21

    During Phase I of this SBIR Program, Advanced Materials Corporation has addressed two key issues concerning hydrogen storage: 1. We have conducted preliminary studies on the effect of certain catalysts in modifying the hydrogen absorption characteristics of nanocrystalline magnesium. 2. We have also conducted proof-of-concept design and construction of a prototype instrument that would rapidly screen materials for hydrogen storage employing chemical combinatorial technique in combination with a Pressure-Composition Isotherm Measurement (PCI) instrument. 3. Preliminary results obtained in this study approach are described in this report.

  6. Effect of p-type multi-walled carbon nanotubes for improving hydrogen storage behaviors

    SciTech Connect

    Lee, Seul-Yi; Yop Rhee, Kyong; Nahm, Seung-Hoon; Park, Soo-Jin

    2014-02-15

    In this study, the hydrogen storage behaviors of p-type multi-walled carbon nanotubes (MWNTs) were investigated through the surface modification of MWNTs by immersing them in sulfuric acid (H{sub 2}SO{sub 4}) and hydrogen peroxide (H{sub 2}O{sub 2}) at various ratios. The presence of acceptor-functional groups on the p-type MWNT surfaces was confirmed by X-ray photoelectron spectroscopy. Measurement of the zeta-potential determined the surface charge transfer and dispersion of the p-type MWMTs, and the hydrogen storage capacity was evaluated at 77 K and 1 bar. From the results obtained, it was found that acceptor-functional groups were introduced onto the MWNT surfaces, and the dispersion of MWNTs could be improved depending on the acid-mixed treatment conditions. The hydrogen storage was increased by acid-mixed treatments of up to 0.36 wt% in the p-type MWNTs, compared with 0.18 wt% in the As-received MWNTs. Consequently, the hydrogen storage capacities were greatly influenced by the acceptor-functional groups of p-type MWNT surfaces, resulting in increased electron acceptor–donor interaction at the interfaces. - Graphical abstract: Hydrogen storage behaviors of the p-type MWNTs with the acid-mixed treatments are described. Display Omitted Display Omitted.

  7. LiBr passivation effect of porous nanocrystalline hydrogenated silicon

    NASA Astrophysics Data System (ADS)

    Amor, Sana Ben; Haddadi, Ikbel; Seif, El Whibi; Daik, Ridha; Bousbih, Rabaa; Dimassi, Wissem; Ezzaouia, Hatem

    2015-12-01

    Nanocrystalline hydrogenated silicon (nc-Si:H) films were deposited on a p-type silicon substrate by plasma enhanced chemical vapor deposition (PECVD), using SiH4 and H2 as reactive gases. Porous (nc-Si:H) layers were afterward obtained and immersed in a lithium bromide (LiBr) aqueous solution in order to enhance their optical and electrical properties for a potential solar cells application. A decrease in the reflectivity to about 9% for Li/porous nc-Si:H layer deposited at 75 sccm against an increase in the minority carrier lifetime were obtained. We correlate these results to the change in crystalline characteristics and chemical composition of the layers in order to understand the effect of LiBr coating on nc-Si:H Through optical and electrical characterization we have demonstrated the possibility of using such LiBr treatment to improve the properties of porous nc-Si:H.

  8. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    SciTech Connect

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  9. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  10. Hydrogenated nanocrystalline silicon germanium thin films

    NASA Astrophysics Data System (ADS)

    Yusoff, A. R. M.; Syahrul, M. N.; Henkel, K.

    2007-08-01

    Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction solar cell due to its higher optical absorption in the wavelength range of interest. In this paper, we present results of optical, structural investigations and electrical characterization of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil-shaped tungsten filament and with a disilane/germane/hydrogen gas mixture. The optical band gaps of a-SiGe:H and nc-SiGe:H thin-films, which are deposited with the same disilane/germane/hydrogen gas mixture ratio of 3.4:1.7:7, are about 1.58 eV and 2.1 eV, respectively. The nc-SiGe:H thin film exhibits a larger optical absorption coefficient of about 2-4 in the 600-900 nm range when compared to nc-Si:H thin film. Therefore, a thinner nc-SiGe:H layer of sim500 nm thickness may be sufficient for the narrow bandgap absorber in an a-Si based multiple-junction solar cell. We enhanced the transport properties as measured by the photoconductivity frequency mixing technique. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

  11. p-Type hydrogen sensing with Al- and V-doped TiO2 nanostructures

    PubMed Central

    2013-01-01

    Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO2 nanomaterials. In the present work, anatase TiO2 nanofilms doped with Al and V elements were fabricated through anodic oxidation of Ti6Al4V alloy and further annealing treatment. Hydrogen sensing behavior of the crystallized Ti-Al-V-O nanofilms at various working temperatures was investigated through exposure to 1,000 ppm H2. Different from n-type hydrogen sensing characteristics of undoped TiO2 nanotubes, the Al- and V-doped nanofilms presented a p-type hydrogen sensing behavior by showing increased resistance upon exposure to the hydrogen-containing atmosphere. The Ti-Al-V-O nanofilm annealed at 450°C was mainly composed of anatase phase, which was sensitive to hydrogen-containing atmosphere only at elevated temperatures. Annealing of the Ti-Al-V-O nanofilm at 550°C could increase the content of anatase phase in the oxide nanofilm and thus resulted in a good sensitivity and resistance recovery at both room temperature and elevated temperatures. The TiO2 nanofilms doped with Al and V elements shows great potential for use as a robust semiconducting hydrogen sensor. PMID:23311459

  12. Photoluminescence and SIMS studies of hydrogen passivation of Mg-doped p-type gallium nitride

    SciTech Connect

    Li, Y.; Lu, Y.; Hwang, C.Y.; Schurman, M.; Mayo, W.; Shen, H.; Wraback, M.; Salagaj, T.; Stall, R.A.

    1996-11-01

    The effects of hydrogen passivation in MOCVD grown Mg doped p-type GaN were studied using low temperature (5K) photoluminescence (PL) and secondary-ion-mass spectroscopy (SIMS). GaN films with different Mg doping level were annealed at 700 C in N{sub 2} ambient with different annealing times. The SIMS results indicate that the hydrogen concentration increases with increasing Mg doping level in the as-grown Mg:GaN film. After 20 minutes of annealing, most of the hydrogen escapes form the film. The 3.455 eV PL peak before annealing and the 3.446 eV peak after annealing found in the mg doped samples were attributed to the exciton bound to the Mg-H complex and to the Mg acceptor, respectively. The shift of the bound exciton peak to higher energy (3.465 eV) in the lightly doped sample is due to an effective n-type compensation associated with an annealing-induced increase in the nitrogen vacancies. In heavily doped Mg:GaN, the decreases in the integrated PL intensity after 700 C annealing may be associated with the hydrogen depassivation of nonradiative recombination centers in the film. The increase of PL intensity in the lightly doped sample after annealing is attributed to the reduction of defects by the annealing process.

  13. Evidence for an iron-hydrogen complex in p-type silicon

    SciTech Connect

    Leonard, S. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-20

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  14. Evidence for an iron-hydrogen complex in p-type silicon

    NASA Astrophysics Data System (ADS)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  15. Controllable nonlinear refraction characteristics in hydrogenated nanocrystalline silicon

    SciTech Connect

    Zheng, D. Q.; Ye, Q. H.; Shen, W. Z.; Su, W. A.

    2014-02-07

    Nonlinear refraction (NLR) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the close aperture Z-scan method. We demonstrate a significant NLR and a unique feature of controllable NLR characteristics between saturable and Kerr NLR with the incident photon energy. We numerically evaluate the proportion of these two mechanisms in different wavelengths by a modified NLR equation. The band tail of nc-Si:H appears to play a crucial role in such NLR responses.

  16. Infrared absorption study of hydrogen incorporation in thick nanocrystalline diamond films

    SciTech Connect

    Tang, C.J.; Neves, A.J.; Carmo, M.C.

    2005-05-30

    We present an infrared (IR) optical absorbance study of hydrogen incorporation in nanocrystalline diamond films. The thick nanocrystalline diamond films were synthesized by microwave plasma-assisted chemical vapor deposition and a high growth rate about 3.0 {mu}m/h was achieved. The morphology, phase quality, and hydrogen incorporation were assessed by means of scanning electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Large amount of hydrogen bonded to nanocrystalline diamond is clearly evidenced by the huge CH stretching band in the FTIR spectrum. The mechanism of hydrogen incorporation is discussed in light of the growth mechanism of nanocrystalline diamond. This suggests the potential of nanocrystalline diamond for IR electro-optical device applications.

  17. Diffusion of hydrogen in perfect, p -type doped, and radiation-damaged 4H-SiC

    NASA Astrophysics Data System (ADS)

    Aradi, B.; Deák, P.; Gali, A.; Son, N. T.; Janzén, E.

    2004-06-01

    The diffusion of interstitial atomic hydrogen in 4H-SiC was investigated theoretically, using the local density approximation of density functional theory. We have found that the diffusion barrier in the perfect crystal is ⩽0.6 eV . Comparing this value with the calculated zero point vibration energy of interstitial hydrogen indicates that hydrogen diffuses very rapidly in perfect portions of the SiC lattice, until it gets trapped. In p -doped (B, Al) material the dissociation of the hydrogen-acceptor complexes is the limiting step in diffusion, with a calculated dissociation energy of 2.5 and 1.6 eV for B+H and Al+H , respectively. In irradiated material the trapping and detrapping of hydrogen by silicon vacancies determines the effective diffusion barrier, which lies between 4.0 and 5.3 eV depending on the Fermi level in p -type and weakly n -type material.

  18. Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon

    NASA Astrophysics Data System (ADS)

    Fugallo, Giorgia; Mattoni, Alessandro

    2014-01-01

    By an analysis of the local crystallinity based on model potential molecular dynamics simulations we investigated the effect of dissolved hydrogen on the thermally induced recrystallization of nanocrystalline silicon. By using the Kolmogorov-Johnson-Mehl-Avrami theory to analyze the atomistic data, we find that the recrystallization rate decreases exponentially with the hydrogen contamination. At low concentration, the kinetics is moderately affected by the H atoms that tend to migrate to the boundaries increasing their effective interface. At higher H content, we find an increasing number of SimHn hydrides that affect the crystalline order of the material and severely impede recrystallization. The analysis based on crystallinity is supported by the atomic scale study of the recrystallization mechanism, here identified as an inverted bond-switching process, and by the ability of hydrates to pin the amorphous-crystalline boundaries.

  19. Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

    NASA Astrophysics Data System (ADS)

    Farrell, L.; Norton, E.; O'Dowd, B. J.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2015-07-01

    In this letter, we demonstrate a low temperature (≈345 °C) growth method for Cu deficient CuCrO2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 μS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably, despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means that the material can be deposited on flexible substrates. As this is a solution based technique, it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.

  20. Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment

    SciTech Connect

    MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

    2000-06-27

    The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

  1. Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodes

    SciTech Connect

    Dominey, R.N.; Lewis, N.S.; Bruce, J.A.; Bookbinder, D.C.; Wrighton, M.S.

    1982-01-27

    The improvement of H/sub 2/ evolution from two different types of catalytic p-type photocathode surfaces has been examined. p-Type Si has been platinized by phtotelectrochemically plating Pt(0) onto the Si surface. Such a photocathode shows significant improvement (compared to naked p-type Si) for photochemical H/sub 2/ evolution with respect to output photovoltage, fill factor, and overall efficiency. Such photocathodes having an optimun amount of Pt(0) give a pH-dependent output voltage with respect to the H/sub 2/O/H/sub 2/ couple, but the dependence is not a simple 59-mV/pH dependence. No pH dependence would be expected if Pt(0) formed a Schottky barrier when plated onto p-type Si. A second kind of H/sub 2/ evolution catalyst has been confined to the surface of p-type Si. Polymeric quantities of an electroactive N,N'-dialkyl-4,4'-bipridinium reagent, (PQ/sup 2 +/.)/sub n/, have been confined to the surface. The Br/sup -/ counterions of the polymer are then exchanged by PtCl/sub 6//sup 2 -/. Photoreduction then yields Pt(0) dispersed in the polymer. Such a surface is again significantly improved compared to naked p-type Si with respect to H/sub 2/ evolution. A comparison of the naked p-Si, the simply platinized, and the (PQ/sup 2 +//sup ///sup +//sub n/.nPt(0))/sub surf./ system is made and contrasted to the expected behavior of an external Schottky barrier photocell driving an electrolysis cell with a Pt cathode. Experiments with n-type MoS/sub 2/, n-type Si, Pt, Au, and W cathodes functionalized with the (PQ/sup 2 +//sup ///sup +/.)sub n/.nPt(0))/sub surf./ system compared to the same surface directly platinized confirm an important difference in the mechanism of H/sub 2/ evolution catalysis for the two surface catalyst systems. p-Type Si modified with optimum amounts of Pt(0) by direct platinization appears to give improved H/sub 2/ evolution efficiency by a mechanism where the Pt(0) serves as a catalyst that does not alter the interface energetics of the

  2. Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

    SciTech Connect

    Yang, Jing; Zhao, Degang Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing; Zhang, Y. T.; Du, G. T.

    2015-03-15

    The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg{sub Ga} acceptors and passivating donor defects. A decrease in p-type resistivity when O{sub 2} is introduced during the postannealing process is attributed to the fact that annealing in an O{sub 2}-containing environment can enhance the dissociation of Mg{sub Ga}-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation.

  3. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

  4. Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

    NASA Astrophysics Data System (ADS)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2013-12-01

    Carrier lifetimes in a highly Al-doped p-type epilayer (NA = 1×1018 cm-3) are investigated by differential microwave photoconductance decay (µ-PCD) measurements. A carrier lifetime of 310 ns in the as-grown p-type epilayer decreases to 90 ns by thermal treatment in Ar, O2, or N2 atmospheres (>700 °C), and recovers to 300 ns by H2 annealing (>750 °C). Hydrogen is detected at a concentration of (2-3)×1015 cm-3 in the H2-annealed epilayer. These results suggest that a lifetime killer exists in the p-type epilayer, limiting the carrier lifetime to 90 ns and is passivated by hydrogen annealing, resulting in the improved carrier lifetime of 300 ns.

  5. Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing

    NASA Astrophysics Data System (ADS)

    Okuda, Takafumi; Miyazawa, Tetsuya; Tsuchida, Hidekazu; Kimoto, Tsunenobu; Suda, Jun

    2014-08-01

    We investigated the enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epilayers (NA ≃ 2 × 1014 cm-3) by postgrowth processing. A carrier lifetime of 2.8 µs in an as-grown epilayer is increased to 5.1 µs by carbon vacancy elimination, i.e., thermal oxidation at 1400 °C for 48 h. It reaches 10 µs by subsequent hydrogen annealing at 1000 °C for 10 min. The carrier lifetime in the as-grown epilayer is also increased to 4.0 µs by only hydrogen annealing. These results suggest that, in addition to carbon vacancy, there is another lifetime killer in p-type SiC, which cannot be eliminated by thermal oxidation but can be passivated by hydrogen annealing.

  6. Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films

    SciTech Connect

    Cherng, J.S.; Chang, S.H.; Hong, S.H.

    2012-10-15

    Highlights: ► Nanocrystalline silicon films were made by pulsed-DC magnetron sputtering. ► A threshold hydrogen concentration was required. ► High defect density due to ion bombardment and oxygen contamination caused low conductivity. -- Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target.

  7. Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

    SciTech Connect

    Yan, X. B.; Chen, Y. F.; Hao, H.; Zhang, E. P.; Shi, S. S.; Lou, J. Z.; Liu, Q.

    2014-08-18

    The hydrogenated nanocrystalline silicon (nc-Si:H) films have been fabricated as resistive switching medium by radio frequency plasma enhanced chemical vapor deposition technology. The constructed Ag/nc-Si:H/Pt structure exhibits stable three nonvolatile resistance states. Tristate resistive states with large ratio 10{sup 2} and 10{sup 5}, less variation of resistance, and long retention exceeding 2.3 × 10{sup 5 }s are observed in Ag/nc-Si:H/Pt stack. The temperature dependence of high resistance state (HRS) and intermediate resistance state (IRS) both show semiconductor behavior, and the temperature dependence of low resistance state (LRS) represents metallic property. Fitting results demonstrated that the conduction mechanism of HRS, IRS, and LRS showed space charge limited conduction (SCLC), tunneling, and ohmic characteristics, respectively. The discrete Ag filament with Si nanocrystalline and complete Ag filament is proposed to be responsible for the performance IRS and LRS. We supposed that the Ag{sup +} ions prefer to be reduced to Ag atoms near the Si nanocrystalline location. Si nanocrystalline between Ag nanoparticles contribute to the current transport at IRS.

  8. Tristate electrochemical metallization memory based in the hydrogenated nanocrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Yan, X. B.; Chen, Y. F.; Hao, H.; Liu, Q.; Zhang, E. P.; Shi, S. S.; Lou, J. Z.

    2014-08-01

    The hydrogenated nanocrystalline silicon (nc-Si:H) films have been fabricated as resistive switching medium by radio frequency plasma enhanced chemical vapor deposition technology. The constructed Ag/nc-Si:H/Pt structure exhibits stable three nonvolatile resistance states. Tristate resistive states with large ratio 102 and 105, less variation of resistance, and long retention exceeding 2.3 × 105 s are observed in Ag/nc-Si:H/Pt stack. The temperature dependence of high resistance state (HRS) and intermediate resistance state (IRS) both show semiconductor behavior, and the temperature dependence of low resistance state (LRS) represents metallic property. Fitting results demonstrated that the conduction mechanism of HRS, IRS, and LRS showed space charge limited conduction (SCLC), tunneling, and ohmic characteristics, respectively. The discrete Ag filament with Si nanocrystalline and complete Ag filament is proposed to be responsible for the performance IRS and LRS. We supposed that the Ag+ ions prefer to be reduced to Ag atoms near the Si nanocrystalline location. Si nanocrystalline between Ag nanoparticles contribute to the current transport at IRS.

  9. Hydrogen retention in beryllium: concentration effect and nanocrystalline growth

    NASA Astrophysics Data System (ADS)

    Pardanaud, C.; Rusu, M. I.; Martin, C.; Giacometti, G.; Roubin, P.; Ferro, Y.; Allouche, A.; Oberkofler, M.; Köppen, M.; Dittmar, T.; Linsmeier, Ch

    2015-12-01

    We herein report on the formation of BeD2 nanocrystalline domes on the surface of a beryllium sample exposed to energetic deuterium ions. A polycrystalline beryllium sample was exposed to D ions at 2 keV/atom leading to laterally averaged deuterium areal densities up to 3.5 1017 D cm-2, and studied using nuclear reaction analysis, Raman microscopy, atomic force microscopy, optical microscopy and quantum calculations. Incorporating D in beryllium generates a tensile stress that reaches a plateau at  ≈1.5 1017 D cm-2. For values higher than 2.0 1017 cm-2, we observed the growth of  ≈90 nm high dendrites, covering up to 10% of the surface in some zones of the sample when the deuterium concentration was 3  ×  1017 D cm-2. These dendrites are composed of crystalline BeD2, as evidenced by Raman microscopy and quantum calculations. They are candidates to explain low temperature thermal desorption spectroscopy peaks observed when bombarding Be samples with D ions with fluencies higher than 1.2 1017 D cm-2.

  10. Hydrogen retention in beryllium: concentration effect and nanocrystalline growth.

    PubMed

    Pardanaud, C; Rusu, M I; Martin, C; Giacometti, G; Roubin, P; Ferro, Y; Allouche, A; Oberkofler, M; Köppen, M; Dittmar, T; Linsmeier, Ch

    2015-12-01

    We herein report on the formation of BeD2 nanocrystalline domes on the surface of a beryllium sample exposed to energetic deuterium ions. A polycrystalline beryllium sample was exposed to D ions at 2 keV/atom leading to laterally averaged deuterium areal densities up to 3.5 10(17) D cm(-2), and studied using nuclear reaction analysis, Raman microscopy, atomic force microscopy, optical microscopy and quantum calculations. Incorporating D in beryllium generates a tensile stress that reaches a plateau at  ≈1.5 10(17) D cm(-2). For values higher than 2.0 10(17) cm(-2), we observed the growth of  ≈90 nm high dendrites, covering up to 10% of the surface in some zones of the sample when the deuterium concentration was 3  ×  10(17) D cm(-2). These dendrites are composed of crystalline BeD2, as evidenced by Raman microscopy and quantum calculations. They are candidates to explain low temperature thermal desorption spectroscopy peaks observed when bombarding Be samples with D ions with fluencies higher than 1.2 10(17) D cm(-2). PMID:26558478

  11. Production of hydrogen using nanocrystalline protein-templated catalysts on m13 phage.

    PubMed

    Neltner, Brian; Peddie, Brian; Xu, Alex; Doenlen, William; Durand, Keith; Yun, Dong Soo; Speakman, Scott; Peterson, Andrew; Belcher, Angela

    2010-06-22

    For decades, ethanol has been in use as a fuel for the storage of solar energy in an energy-dense, liquid form. Over the past decade, the ability to reform ethanol into hydrogen gas suitable for a fuel cell has drawn interest as a way to increase the efficiency of both vehicles and stand-alone power generators. Here we report the use of extremely small nanocrystalline materials to enhance the performance of 1% Rh/10% Ni@CeO(2) catalysts in the oxidative steam reforming of ethanol with a ratio of 1.7:1:10:11 (air/EtOH/water/argon) into hydrogen gas, achieving 100% conversion of ethanol at only 300 degrees C with 60% H(2) in the product stream and less than 0.5% CO. Additionally, nanocrystalline 10% Ni@CeO(2) was shown to achieve 100% conversion of ethanol at 400 degrees C with 73% H(2), 2% CO, and 2% CH(4) in the product stream. Finally, we demonstrate the use of biological templating on M13 to improve the resistance of this catalyst to deactivation over 52 h tests at high flow rates (120 000 h(-1) GHSV) at 450 degrees C. This study suggests that the use of highly nanocrystalline, biotemplated catalysts to improve activity and stability is a promising route to significant gains over traditional catalyst manufacture methods. PMID:20527795

  12. The activity of nanocrystalline Fe-based alloys as electrode materials for the hydrogen evolution reaction

    NASA Astrophysics Data System (ADS)

    Müller, Christian Immanuel; Sellschopp, Kai; Tegel, Marcus; Rauscher, Thomas; Kieback, Bernd; Röntzsch, Lars

    2016-02-01

    In view of alkaline water electrolysis, the activities for the hydrogen evolution reaction of nanocrystalline Fe-based electrode materials were investigated and compared with the activities of polycrystalline Fe and Ni. Electrochemical methods were used to elucidate the overpotential value, the charge transfer resistance and the double layer capacity. Structural properties of the electrode surface were determined with SEM, XRD and XPS analyses. Thus, a correlation between electrochemical and structural parameters was found. In this context, we report on a cyclic voltammetric activation procedure which causes a significant increase of the surface area of Fe-based electrodes leading to a boost in effective activity of the activated electrodes. It was found that the intrinsic activity of activated Fe-based electrodes is very high due to the formation of a nanocrystalline surface layer. In contrast, the activation procedure influences only the intrinsic activity of the Ni electrodes without the formation of a porous surface layer.

  13. Temperature- and Hydrogen-Gas-Dependent Reversible Inversion of n-/ p-Type Conductivity in CVD-Grown Multilayer Graphene (MLG) Film

    NASA Astrophysics Data System (ADS)

    Dutta, D.; Hazra, S. K.; Das, J.; Sarkar, C. K.; Basu, S.

    2016-06-01

    In atmospheric-pressure chemical vapor deposition-grown multilayer graphene films, a reversible change from n- to p-type conductivity has been observed in the temperature range of 25°C to 150°C upon exposure to hydrogen. This study was conducted with a simple Pd/graphene/Pd planar device. The inversion was observed at around 100°C, below which it showed stable n-type response to hydrogen. The hydrogen response was quite fast (1 s to 2 s) at 150°C. A plausible mechanism has been developed to explain such inversion. The selectivity and stability of the device in both n- and p-regions were investigated in the temperature range of 25°C to 150°C.

  14. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    NASA Astrophysics Data System (ADS)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  15. Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Liu, AnYao; Phang, Sieu Pheng; Rougieux, Fiacre E.; Macdonald, Daniel

    2015-08-01

    Significant reductions in interstitial iron (Fei) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250 °C-700 °C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fei concentrations were much less significant. The precipitation of Fei is ruled out as a possible explanation for the significant reductions. The hydrogen passivation of Fei, which is the complexing of monatomic H and isolated Fei forming a recombination-inactive hydride, is proposed as the most probable model to explain the reductions. Under the assumption that the reduction is caused by the hydrogenation of Fei, the reactants' charge states in the hydrogenation reaction are determined by two independent approaches. In the first approach, illumination is found to have a small but detectible impact on the reaction kinetics in the lower temperature range. The dominating reactants' charge states are concluded to be Fe0 + H+ as revealed by modelling the injection-dependent charge states of isolated Fei and monatomic H. In the second approach, the reaction kinetics are fitted with the Arrhenius equation over a large temperature range of 250 °C-700 °C. A reasonable fit is only obtained when assuming the reacting charge states are Fe0 + H+. This supports the conclusion on the reacting charge states and also gives a value of the activation energy of hydrogenation in the 0.7-0.8 eV range.

  16. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Gu, Li-Ping; Tang, Chun-Jiu; Jiang, Xue-Fan; L. Pinto, J.

    2011-05-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHx (x = 1, 2, 3) growth species for adsorption sites.

  17. P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering

    NASA Astrophysics Data System (ADS)

    Ohmura, Y.; Takahashi, M.; Suzuki, M.; Sakamoto, N.; Meguro, T.

    2001-12-01

    B has been successfully doped into the hydrogenated amorphous Si films without using explosive and/or toxic gases SiH 4 or B 2H 6 by reactive radio-frequency co-sputtering. The target used for co-sputtering was a composite target composed of a B-doped Si wafer and B chips attached on the Si wafer with silver powder bond. The maximum area fraction of B chips used was 0.11. Argon and hydrogen pressures were 5×10 -3 and 5×10 -4 Torr, respectively. Substrates were kept at 200°C or 250°C during sputtering. The maximum B concentration in the film obtained was 2×10 19 cm -3 from secondary ion mass spectroscopy measurement. Films with resistivity of 10 4-10 5 Ω cm were obtained, which was low for the above acceptor concentration, compared with other group III impurities doping, indicating the high doping efficiency of B. A heterostructure, which was prepared by co-sputtering these B-doped films on an n-type crystalline Si, shows a good rectification characteristic. A small photovoltaic effect is also observed.

  18. Solar hydrogen generation by nanoscale p-n junction of p-type molybdenum disulfide/n-type nitrogen-doped reduced graphene oxide.

    PubMed

    Meng, Fanke; Li, Jiangtian; Cushing, Scott K; Zhi, Mingjia; Wu, Nianqiang

    2013-07-17

    Molybdenum disulfide (MoS2) is a promising candidate for solar hydrogen generation but it alone has negligible photocatalytic activity. In this work, 5-20 nm sized p-type MoS2 nanoplatelets are deposited on the n-type nitrogen-doped reduced graphene oxide (n-rGO) nanosheets to form multiple nanoscale p-n junctions in each rGO nanosheet. The p-MoS2/n-rGO heterostructure shows significant photocatalytic activity toward the hydrogen evolution reaction (HER) in the wavelength range from the ultraviolet light through the near-infrared light. The photoelectrochemical measurement shows that the p-MoS2/n-rGO junction greatly enhances the charge generation and suppresses the charge recombination, which is responsible for enhancement of solar hydrogen generation. The p-MoS2/n-rGO is an earth-abundant and environmentally benign photocatalyst for solar hydrogen generation. PMID:23808935

  19. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

    PubMed Central

    2014-01-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect. PMID:24994958

  20. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

    NASA Astrophysics Data System (ADS)

    Wen, Chao; Xu, Hao; He, Wei; Li, Zhengping; Shen, Wenzhong

    2014-06-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect.

  1. P-type Cu--Ti--O nanotube arrays and their use in self-biased heterojunction photoelectrochemical diodes for hydrogen generation.

    PubMed

    Mor, Gopal K; Varghese, Oomman K; Wilke, Rudeger H T; Sharma, Sanjeev; Shankar, Karthik; Latempa, Thomas J; Choi, Kyoung-Shin; Grimes, Craig A

    2008-07-01

    Copper and titanium remain relatively plentiful in the earth's crust; hence, their use for large-scale solar energy conversion technologies is of significant interest. We describe fabrication of vertically oriented p-type Cu-Ti-O nanotube array films by anodization of copper rich (60% to 74%) Ti metal films cosputtered onto fluorine doped tin oxide (FTO) coated glass. Cu-Ti-O nanotube array films 1 mum thick exhibit external quantum efficiencies up to 11%, with a spectral photoresponse indicating that the complete visible spectrum, 380 to 885 nm, contributes significantly to the photocurrent generation. Water-splitting photoelectrochemical pn-junction diodes are fabricated using p-type Cu-Ti-O nanotube array films in combination with n-type TiO 2 nanotube array films. With the glass substrates oriented back-to-back, light is incident upon the UV absorbing n-TiO 2 side, with the visible light passing to the p-Cu-Ti-O side. In a manner analogous to photosynthesis, photocatalytic reactions are powered only by the incident light to generate fuel with oxygen evolved from the n-TiO 2 side of the diode and hydrogen from the p-Cu-Ti-O side. To date, we find under global AM 1.5 illumination that such photocorrosion-stable diodes generate a photocurrent of approximately 0.25 mA/cm (2), at a photoconversion efficiency of 0.30%. PMID:18540655

  2. Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

    SciTech Connect

    Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

    1985-02-01

    Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

  3. Investigation of nitriding and reduction processes in a nanocrystalline iron-ammonia-hydrogen system at 350 °C.

    PubMed

    Bartłomiej, Wilk; Arabczyk, Walerian

    2015-08-21

    In this paper, the series of phase transitions occurring during the gaseous nitriding of nanocrystalline iron was studied. The nitriding process of nanocrystalline iron and the reduction process of the obtained nanocrystalline iron nitrides were carried out at 350 °C in a tubular differential reactor equipped with systems for thermogravimetric measurements and analysis of gas phase composition. The samples were reduced with hydrogen at 500 °C in the above mentioned reactor. Then the sample was nitrided at 350 °C in a stream of ammonia-hydrogen mixtures of various nitriding potentials, P = pNH3/pH2(3/2). At each nitriding potential stationary states were obtained - the nitriding reaction rate is zero and the catalytic ammonia decomposition reaction rate is constant. The reduction process of the obtained nanocrystalline iron nitrides was studied at 350 °C in the stationary states as well. The phase composition of products obtained in both reaction directions (nitriding and reduction) was different despite the identical concentration of nitrogen in the nitriding mixture. The hysteresis phenomenon, occurring at the iron nitriding degree - nitriding potential system, was explained. In the single-phase areas of α-Fe(N), γ'-Fe4N or ε-Fe3-2N, a state of chemical equilibrium between the ammonia-hydrogen mixture, nanocrystalline iron surface and volume was observed. In the multi-phase areas, between the gas phase and the iron surface a state of chemical equilibrium holds, but between the gas phase and solid phase volume a state of quasi-equilibrium exists. The model of the nitriding process of nanocrystalline iron to iron nitride (γ'-Fe4N) was presented. It was found that nanocrystallites reacted in the order of their sizes from the largest to the smallest. PMID:26182186

  4. Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials

    SciTech Connect

    Hugger, Peter G.; Cohen, J. David; Yan Baojie; Yue Guozhen; Yang, Jeffrey; Guha, Subhendu

    2010-12-20

    We report measurements of the structural and compositional properties of a range of hydrogenated nanocrystalline films. We employed Raman spectroscopy for crystallinity and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) for impurity characterizations. The crystalline volume fractions and impurity levels are correlated with the deep state densities determined by drive level capacitance profiling. Those defects were found to have a thermal emission energy of 0.65{+-}.05 eV. We found that the overall crystallinity correlated reasonably well with the density of such defect states and also found a strong correlation between the defect density and the levels of oxygen impurities. Possible origins of these defects are discussed.

  5. Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates

    NASA Astrophysics Data System (ADS)

    Amor, Sana Ben; Meddeb, Hosny; Daik, Ridha; Othman, Afef Ben; Slama, Sonia Ben; Dimassi, Wissem; Ezzaouia, Hatem

    2016-01-01

    In this paper, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on mono-crystalline silicon substrate by plasma enhanced chemical vapor deposition (PECVD) under different hydrogen flow rates followed by a thermal treatment in an infrared furnace at different temperature ranging from 300 to 900 °C. The investigated structural, morphological and optoelectronic properties of samples were found to be strongly dependent on the annealing temperature. Raman spectroscopy revealed that nc-Si:H films contain crystalline, amorphous and mixed structures as well. We find that post-deposition thermal treatment may lead to a tendency for structural improvement and a decrease of the disorder in the film network at moderate temperature under 500 °C. As for annealing at higher temperature up to 900 °C induces the recrystallization of the film which is correlated with the grain size and volume fraction in the layer. We demonstrate that high annealing temperature can lead to a decrease of silicon-hydrogen bonds corresponding to a reduction of the amorphous matrix in the layer promoting the formation of covalent Si-Si bonds. The effusion of the hydrogen from the grown film leads to increase its density and therefore induces a decrease in the thickness of the layer. For post-deposition thermal treatment in temperature range under 700 °C, the post-deposition anneal seems to be crucial for obtaining good passivation quality as expressed by a minority carrier lifetime of 17 μs, as it allows a significant reduction in defect states at the layer/substrate interface. While for a temperature higher than 900 °C, the lifetime reduction is obtained because of hydrogen effusion phenomenon, thus a tendency for crystallization in the grown film.

  6. A cocatalyst-free Eosin Y-sensitized p-type of Co₃O₄ quantum dot for highly efficient and stable visible-light-driven water reduction and hydrogen production.

    PubMed

    Zhang, Ning; Shi, Jinwen; Niu, Fujun; Wang, Jian; Guo, Liejin

    2015-09-01

    Owing to the effect of energy band bending, p-type Co3O4 quantum dots sensitized by Eosin Y showed a high and stable photocatalytic activity (∼13,440 μmol h(-1) g(-1)(cat)) for water reduction and hydrogen production under visible-light irradiation without any cocatalyst. PMID:26234704

  7. P-type ATPases.

    PubMed

    Palmgren, Michael G; Nissen, Poul

    2011-01-01

    P-type ATPases form a large superfamily of cation and lipid pumps. They are remarkably simple with only a single catalytic subunit and carry out large domain motions during transport. The atomic structure of P-type ATPases in different conformations, together with ample mutagenesis evidence, has provided detailed insights into the pumping mechanism by these biological nanomachines. Phylogenetically, P-type ATPases are divided into five subfamilies, P1-P5. These subfamilies differ with respect to transported ligands and the way they are regulated. PMID:21351879

  8. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    PubMed

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content. PMID:27483856

  9. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

    SciTech Connect

    Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G.; Sivec, L.; Yang, J.; Guha, S.; Tong, X.

    2012-04-01

    We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

  10. Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam

    SciTech Connect

    Takashiri, Masayuki Imai, Kazuo; Uyama, Masato; Nishi, Yoshitake; Hagino, Harutoshi; Miyazaki, Koji; Tanaka, Saburo

    2014-06-07

    The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17 MeV. For the n-type thin films, nanodots with a diameter of less than 10 nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improved by EB irradiation. The different crystallization behavior of the n-type and p-type thin films is attributed to atomic rearrangement during EB irradiation. Selenium in the n-type thin films is more likely to undergo atomic rearrangement than the other atoms present, so only the crystallinity of the n-type Bi-Se-Te thin films was enhanced.

  11. Enhanced performance of flexible nanocrystalline silicon thin-film solar cells using seed layers with high hydrogen dilution.

    PubMed

    Lee, Ji-Eun; Kim, Donghwan; Yoon, Kyung Hoon; Cho, Jun-Sik

    2013-12-01

    Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region. PMID:24266159

  12. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  13. Proton-Conducting Nanocrystalline Ceramics for High-Temperature Hydrogen Sensing

    NASA Astrophysics Data System (ADS)

    Tang, Xiling; Xu, Zhi; Trontz, Adam; Jing, Wenheng; Dong, Junhang

    2014-01-01

    The proton-conductive doped ceramic materials, including SrCe0.95Tb0.05O3-δ (SCTb), SrCe0.8Zr0.1Y0.1O3-δ (SCZY), and SrZr0.95Y0.05O3-δ (SZY), are synthesized in the forms of nanoparticles and nanocrystalline thin films on sapphire wafers and long-period grating (LPG) fibers. The H2 chemisorption and electrical conductivity of the nanocrystalline SCTb, SCZY, and SZY materials are measured at high temperature with and without the presence of CO2 gas. The resonant wavelength shifts ( Updelta λ_{{{{R,H}}_{ 2} }} ) of the SCTb, SCZY, and SZY thin-film coated LPGs in response to H2 concentration changes are studied in gas mixtures relevant to coal gasification syngas to evaluate their potential for high-temperature H2 detection. The results show that, at around 773.15 K (500 °C), SCTb has the highest H2 sensitivity but the most severe interferences from impurities such as CO2 and H2S; SZY has the best chemical resistance to impurities but the lowest H2 sensitivity; and SCZY exhibits high H2 sensitivity with reasonable chemical resistance.

  14. Impact of high microwave power on hydrogen impurity trapping in nanocrystalline diamond films grown with simultaneous nitrogen and oxygen addition into methane/hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2016-01-01

    In this work, we study for the first time the influence of microwave power higher than 2.0 kW on bonded hydrogen impurity incorporation (form and content) in nanocrystalline diamond (NCD) films grown in a 5 kW MPCVD reactor. The NCD samples of different thickness ranging from 25 to 205 μm were obtained through a small amount of simultaneous nitrogen and oxygen addition into conventional about 4% methane in hydrogen reactants by keeping the other operating parameters in the same range as that typically used for the growth of large-grained polycrystalline diamond films. Specific hydrogen point defect in the NCD films is analyzed by using Fourier-transform infrared (FTIR) spectroscopy. When the other operating parameters are kept constant (mainly the input gases), with increasing of microwave power from 2.0 to 3.2 kW (the pressure was increased slightly in order to stabilize the plasma ball of the same size), which simultaneously resulting in the rise of substrate temperature more than 100 °C, the growth rate of the NCD films increases one order of magnitude from 0.3 to 3.0 μm/h, while the content of hydrogen impurity trapped in the NCD films during the growth process decreases with power. It has also been found that a new H related infrared absorption peak appears at 2834 cm-1 in the NCD films grown with a small amount of nitrogen and oxygen addition at power higher than 2.0 kW and increases with power higher than 3.0 kW. According to these new experimental results, the role of high microwave power on diamond growth and hydrogen impurity incorporation is discussed based on the standard growth mechanism of CVD diamonds using CH4/H2 gas mixtures. Our current experimental findings shed light into the incorporation mechanism of hydrogen impurity in NCD films grown with a small amount of nitrogen and oxygen addition into methane/hydrogen plasma.

  15. Magnetic ordering temperature of nanocrystalline Gd: enhancement of magnetic interactions via hydrogenation-induced "negative" pressure.

    PubMed

    Tereshina, E A; Khmelevskyi, S; Politova, G; Kaminskaya, T; Drulis, H; Tereshina, I S

    2016-01-01

    Gadolinium is a nearly ideal soft-magnetic material. However, one cannot take advantage of its properties at temperatures higher than the room temperature where Gd loses the ferromagnetic ordering. By using high-purity bulk samples with grains ~200 nm in size, we present proof-of-concept measurements of an increased Curie point (TC) and spontaneous magnetization in Gd due to hydrogenation. From first-principles we explain increase of TC in pure Gd due to the addition of hydrogen. We show that the interplay of the characteristic features in the electronic structure of the conduction band at the Fermi level in the high-temperature paramagnetic phase of Gd and "negative" pressure exerted by hydrogen are responsible for the observed effect. PMID:26931775

  16. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  17. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  18. Viral-templated nanocrystalline Pd nanowires for chemiresistive hydrogen (H2) sensors

    NASA Astrophysics Data System (ADS)

    Moon, Chung Hee; Yan, Yiran; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

    2014-08-01

    A palladium (Pd) nanowire-based hydrogen (H2) sensor has been fabricated with a novel viral-templated assembly route. A filamentous M13 bacteriophage was used as the viral-template for assembly of Pd nanowires at ambient conditions. Scanning electron microscopy determined Pd nanowire distribution and morphology with the devices. The phage template concentration controlled the number of physical and electrical nanowire connections across the device. A greater phage concentration resulted in a higher connection density and thicker Pd deposition. A lower phage concentration generated devices which formed chain-like nanowires of Pd nanocrystals, whereas a higher phage concentration formed devices with a continuous mesh-like structure. The lower concentration devices showed 51-78% instantaneous response to 2000 ppm H2 and response time less than 30 s.

  19. Electronic transport in nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

    NASA Astrophysics Data System (ADS)

    Bodurtha, Kent Edward

    Recent interest in composite materials based on hydrogenated amorphous silicon (a-Si:H) stems in part from its potential for technical applications in thin film transistors and solar cells. Previous reports have shown promising results for films of a-Si:H with embedded silicon nanocrystals, with the goal of combining the low cost, large area benefits of hydrogenated amorphous silicon with the superior electronic characteristics of crystalline material. These materials are fabricated in a dual-chamber plasma-enhanced chemical vapor deposition system in which the nanocrystals are produced separately from the amorphous film, providing the flexibility to independently tune the growth parameters of each phase; however, electronic transport through these and other similar materials is not well understood. This thesis reports the synthesis and characterization of thin films composed of germanium nanocrystals embedded in a-Si:H. The results presented here describe detailed measurements of the conductivity, photoconductivity and thermopower which reveal a transition from conduction through the a-Si:H for samples with few germanium nanocrystals, to conduction through the nanocrystal phase as the germanium crystal fraction XGe is increased. These films display reduced photosensitivity as XGe is increased, but an unexpected increase in the dark conductivity is found in samples with X Ge > 5% after long light exposures. Detailed studies of the conductivity temperature dependence in these samples exposes a subtle but consistent deviation from the standard Arrhenius expression; the same departure is found in samples of pure a-Si:H; a theoretical model is presented which accurately describes the actual conductivity temperature dependence.

  20. Highly sensitive hydrogen sulfide (H2 S) gas sensors from viral-templated nanocrystalline gold nanowires

    NASA Astrophysics Data System (ADS)

    Moon, Chung Hee; Zhang, Miluo; Myung, Nosang V.; Haberer, Elaine D.

    2014-04-01

    A facile, site-specific viral-templated assembly method was used to fabricate sensitive hydrogen sulfide (H2S) gas sensors at room temperature. A gold-binding M13 bacteriophage served to organize gold nanoparticles into linear arrays which were used as seeds for subsequent nanowire formation through electroless deposition. Nanowire widths and densities within the sensors were modified by electroless deposition time and phage concentration, respectively, to tune device resistance. Chemiresistive H2S gas sensors with superior room temperature sensing performance were produced with sensitivity of 654%/ppmv, theoretical lowest detection limit of 2 ppbv, and 70% recovery within 9 min for 0.025 ppmv. The role of the viral template and associated gold-binding peptide was elucidated by removing organics using a short O2 plasma treatment followed by an ethanol dip. The template and gold-binding peptide were crucial to electrical and sensor performance. Without surface organics, the resistance fell by several orders of magnitude, the sensitivity dropped by more than a factor of 100 to 6%/ppmv, the lower limit of detection increased, and no recovery was detected with dry air flow. Viral templates provide a novel, alternative fabrication route for highly sensitive, nanostructured H2S gas sensors.

  1. Ultrafine Nanocrystalline CeO2@C-Containing NaAlH4 with Fast Kinetics and Good Reversibility for Hydrogen Storage.

    PubMed

    Zhang, Xin; Liu, Yongfeng; Wang, Ke; Li, You; Gao, Mingxia; Pan, Hongge

    2015-12-21

    A nanocrystalline CeO2@C-containing NaAlH4 composite is successfully synthesized in situ by hydrogenating a NaH-Al mixture doped with CeO2@C. Compared with NaAlH4 , the as-prepared CeO2@C-containing NaAlH4 composite, with a minor amount of excess Al, exhibits significantly improved hydrogen storage properties. The dehydrogenation onset temperature of the hydrogenated [NaH-Al-7 wt % CeO2@C]-0.04Al sample is 77 °C lower than that of the pristine sample because of a reduced kinetic barrier. More importantly, the dehydrogenated sample absorbs ∼4.7 wt % hydrogen within 35 min at 100°C and 10 MPa of hydrogen. Compositional and structural analyses reveal that CeO2 is converted to CeH2 during ball milling and that the newly formed CeH2 works with the excess of Al to synergistically improve the hydrogen storage properties of NaAlH4. Our findings will aid in the rational design of novel catalyst-doped complex hydride systems with low operating temperatures, fast kinetics, and long-term cyclability. PMID:26632764

  2. Depth-dependent crystallinity of nano-crystalline silicon induced by step-wise variation of hydrogen dilution during hot-wire CVD

    NASA Astrophysics Data System (ADS)

    Arendse, C. J.; van Heerden, B. A.; Muller, T. F. G.; Cummings, F. R.; Oliphant, C. J.; Malgas, G. F.; Motaung, D. E.

    2015-06-01

    To induce an amorphous surface in a nano-crystalline silicon (nc-Si:H) thin film, the hydrogen dilution was reduced step-wise at fixed time intervals from 90 - 50% during the hotwire chemical vapour deposition process. This contribution reports on the structural properties of the resultant nc-Si:H thin film as a function of the deposition time. Raman spectroscopy, confirmed by high resolution transmission spectroscopy, indicates crystalline uniformity in the growth direction, accompanied by the progression of an amorphous surface layer as the deposition time is increased. The silicon- and oxygen bonding configurations were probed using infrared spectroscopy and electron energy loss spectroscopy. The growth mechanism is ascribed to the improved etching rate by atomic hydrogen in nano-crystalline silicon towards the film/substrate interface region. The optical properties were calculated by applying the effective medium approximation theory, where the existence of bulk and interfacial layers, as inferred from cross-sectional microscopy, were taken into account.

  3. Effect of ultraviolet radiation exposure on room-temperature hydrogen sensitivity of nanocrystalline doped tin oxide sensor incorporated into microelectromechanical systems device

    SciTech Connect

    Shukla, Satyajit; Agrawal, Rajnikant; Cho, Hyoung J.; Seal, Sudipta; Ludwig, Lawrence; Parish, Clyde

    2005-03-01

    The effect of ultraviolet (UV) radiation exposure on the room-temperature hydrogen (H{sub 2}) sensitivity of nanocrystalline indium oxide (In{sub 2}O{sub 3})-doped tin oxide (SnO{sub 2}) thin-film gas sensor is investigated in this article. The present sensor is incorporated into microelectromechanical systems device using sol-gel dip-coating technique. The present sensor exhibits a very high sensitivity, as high as 65 000-110 000, at room temperature, for 900 ppm of H{sub 2} under the dynamic test condition without UV exposure. The H{sub 2} sensitivity is, however, observed to reduce to 200 under UV radiation, which is contrary to the literature data, where an enhanced room-temperature gas sensitivity has been reported under UV radiation. The observed phenomenon is attributed to the reduced surface coverage by the chemisorbed oxygen ions under UV radiation, which is in consonance with the prediction of the constitutive equation, proposed recently by the authors, for the gas sensitivity of nanocrystalline semiconductor oxide thin-film sensors.

  4. Influence of helium dilution of silane on microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by HW-CVD

    SciTech Connect

    Waman, V.S.; Kamble, M.M.; Ghosh, S.S.; Hawaldar, R.R.; Amalnerkar, D.P.; Sathe, V.G.; Gosavi, S.W.; Jadkar, S.R.

    2012-11-15

    Highlights: ► nc-Si:H films synthesized using HW-CVD method from silane and helium gas mixture without hydrogen. ► Volume fraction of crystallites and its size in the films decreases with increase in He dilution of SiH{sub 4}. ► Increase in Urbach energy and defect density with increase in He dilution of SiH{sub 4}. ► Increasing He dilution, hydrogen bonding in the films shifts from Si-H{sub 2} and (Si-H{sub 2}){sub n} complexes to Si-H. ► Hydrogen content films were found to be <2.2 at.% but the bandgap remains as high as 2.0 eV or even more. -- Abstract: We report influence of helium dilution of silane in hot wire chemical vapor deposition for hydrogenated nano-crystalline silicon films. Structural properties of these films have been investigated by using Raman spectroscopy, low angle x-ray diffraction, Fourier transform infra-red spectroscopy and non-contact atomic force microscopy. Optical characterization has been performed by UV–visible spectroscopy. It has been observed that in contrast to conventional plasma enhanced chemical vapor deposition, the addition of helium with silane in hot wire chemical vapor deposition has an adverse effect on the crystallinity and the material properties. Hydrogen content in the films was found <2.2 at.% whereas the bandgap remain as high as 2 eV or more. Increase in Urbach energy and defect density also suggests the deterioration effect of helium on material properties. The possible reasons for the deterioration of crystallinity and the material properties have been discussed.

  5. Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Tian-Tian, Li; Tie, Yang; Jia, Fang; De-Kun, Zhang; Jian, Sun; Chang-Chun, Wei; Sheng-Zhi, Xu; Guang-Cai, Wang; Cai-Chi, Liu; Ying, Zhao; Xiao-Dan, Zhang

    2016-04-01

    Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO x :H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiO x :H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO x :H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiO x matrix with higher crystalline volume fraction (I c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher I c can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO x :H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO x back reflector, with a constant power used in deposition process, the sample with gradient power SiO x back reflector can enhance the total short-circuit current density (J sc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively. Project supported by the Hi-Tech Research and Development Program of China (Grant No. 2013AA050302), the National Natural Science Foundation of China (Grant No. 61474065), Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology, China (Grant No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province, China (Grant No. BE2014147-3), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

  6. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2014-10-22

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant. PMID:25459700

  7. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS = 500 °C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the Sisbnd C network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the Sisbnd C bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  8. Magnetic ordering temperature of nanocrystalline Gd: enhancement of magnetic interactions via hydrogenation-induced “negative” pressure

    NASA Astrophysics Data System (ADS)

    Tereshina, E. A.; Khmelevskyi, S.; Politova, G.; Kaminskaya, T.; Drulis, H.; Tereshina, I. S.

    2016-03-01

    Gadolinium is a nearly ideal soft-magnetic material. However, one cannot take advantage of its properties at temperatures higher than the room temperature where Gd loses the ferromagnetic ordering. By using high-purity bulk samples with grains ~200 nm in size, we present proof-of-concept measurements of an increased Curie point (TC) and spontaneous magnetization in Gd due to hydrogenation. From first-principles we explain increase of TC in pure Gd due to the addition of hydrogen. We show that the interplay of the characteristic features in the electronic structure of the conduction band at the Fermi level in the high-temperature paramagnetic phase of Gd and “negative” pressure exerted by hydrogen are responsible for the observed effect.

  9. Magnetic ordering temperature of nanocrystalline Gd: enhancement of magnetic interactions via hydrogenation-induced “negative” pressure

    PubMed Central

    Tereshina, E. A.; Khmelevskyi, S.; Politova, G.; Kaminskaya, T.; Drulis, H.; Tereshina, I. S.

    2016-01-01

    Gadolinium is a nearly ideal soft-magnetic material. However, one cannot take advantage of its properties at temperatures higher than the room temperature where Gd loses the ferromagnetic ordering. By using high-purity bulk samples with grains ~200 nm in size, we present proof-of-concept measurements of an increased Curie point (TC) and spontaneous magnetization in Gd due to hydrogenation. From first-principles we explain increase of TC in pure Gd due to the addition of hydrogen. We show that the interplay of the characteristic features in the electronic structure of the conduction band at the Fermi level in the high-temperature paramagnetic phase of Gd and “negative” pressure exerted by hydrogen are responsible for the observed effect. PMID:26931775

  10. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  11. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    PubMed

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  12. composite and p-type Si

    NASA Astrophysics Data System (ADS)

    Lin, Yow-Jon; Yang, Shih-Hung

    2014-07-01

    The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

  13. p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Sheng, Su; Fang, Guojia; Li, Chun; Xu, Sheng; Zhao, Xingzhong

    2006-06-01

    The recent advance of p-type transparent conductive oxide thin films is reviewed. The focus is on p-type transparent oxide semiconductors CuAlO2, CuGaO2, CuInO2, SrCu2O2, and LaCuOCh (Ch = chalcogen). These materials and related device applications are then shown as examples. Room temperature operation of current injection emission from ultraviolet light-emitting diodes based on p-SCO/n-ZnO p-n junctions has been demonstrated. This changed with the discovery of p-type transparent conducting oxides, thereby opening up the possibility for all-oxide transparent electronics.

  14. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    PubMed

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. PMID:26413646

  15. p-type Mesoscopic Nickel Oxide/Organometallic Perovskite Heterojunction Solar Cells

    PubMed Central

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-01-01

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics. PMID:24755642

  16. Computational Classification of P-Type ATPases.

    PubMed

    Søndergaard, Dan; Knudsen, Michael; Pedersen, Christian Nørgaard Storm

    2016-01-01

    Analysis of sequence data is inevitable in modern molecular biology, and important information about for example proteins can be inferred efficiently using computational methods. Here, we explain how to use the information in freely available databases together with computational methods for classification and motif detection to assess whether a protein sequence corresponds to a P-type ATPase (and if so, which subtype) or not. PMID:26695056

  17. Nanocrystalline ceramic materials

    DOEpatents

    Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

    1994-01-01

    A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

  18. Evolution of Plant P-Type ATPases

    PubMed Central

    Pedersen, Christian N. S.; Axelsen, Kristian B.; Harper, Jeffrey F.; Palmgren, Michael G.

    2012-01-01

    Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae) were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauri and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a non-vascular moss), Selaginella moellendorffii (a primitive vascular plant), and Arabidopsis thaliana (a model flowering plant). Each organism contained sequences for all five subfamilies of P-type ATPases. Whereas Na+ and H+ pumps seem to mutually exclude each other in flowering plants and animals, they co-exist in chlorophytes, which show representatives for two kinds of Na+ pumps (P2C and P2D ATPases) as well as a primitive H+-ATPase. Both Na+ and H+ pumps also co-exist in the moss P. patens, which has a P2D Na+-ATPase. In contrast to the primitive H+-ATPases in chlorophytes and P. patens, the H+-ATPases from vascular plants all have a large C-terminal regulatory domain as well as a conserved Arg in transmembrane segment 5 that is predicted to function as part of a backflow protection mechanism. Together these features are predicted to enable H+ pumps in vascular plants to create large electrochemical gradients that can be modulated in response to diverse physiological cues. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps. PMID:22629273

  19. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed. PMID:27459942

  20. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p–n junctions will also be briefly discussed.

  1. Nanocrystalline ceramic materials

    DOEpatents

    Siegel, R.W.; Nieman, G.W.; Weertman, J.R.

    1994-06-14

    A method is disclosed for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material. 19 figs.

  2. DNA attachment to nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Wenmackers, S.; Christiaens, P.; Daenen, M.; Haenen, K.; Nesládek, M.; van Deven, M.; Vermeeren, V.; Michiels, L.; Ameloot, M.; Wagner, P.

    2005-09-01

    A biochemical method to immobilize DNA on synthetic diamond for biosensor applications is developed. Nanocrystalline diamond is grown using microwave plasma-enhanced chemical vapour deposition. On the hydrogen-terminated surface 10-undecenoic acid is tethered photochemically under 254 nm illumination, followed by 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide crosslinker-mediated attachment of amino modified DNA. The attachment is functionally confirmed by comparison of supernatant fluorescence and gel electrophoresis. The linking procedure allowed for 35 denaturation and rehybridisation steps.

  3. Creating bulk nanocrystalline metal.

    SciTech Connect

    Fredenburg, D. Anthony; Saldana, Christopher J.; Gill, David D.; Hall, Aaron Christopher; Roemer, Timothy John; Vogler, Tracy John; Yang, Pin

    2008-10-01

    Nanocrystalline and nanostructured materials offer unique microstructure-dependent properties that are superior to coarse-grained materials. These materials have been shown to have very high hardness, strength, and wear resistance. However, most current methods of producing nanostructured materials in weapons-relevant materials create powdered metal that must be consolidated into bulk form to be useful. Conventional consolidation methods are not appropriate due to the need to maintain the nanocrystalline structure. This research investigated new ways of creating nanocrystalline material, new methods of consolidating nanocrystalline material, and an analysis of these different methods of creation and consolidation to evaluate their applicability to mesoscale weapons applications where part features are often under 100 {micro}m wide and the material's microstructure must be very small to give homogeneous properties across the feature.

  4. Chemical-free n-type and p-type multilayer-graphene transistors

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Eisaman, M. D.

    2016-08-01

    A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

  5. Structural, optical, and magnetic properties of Cu- and Ni-codoped CdO dilute magnetic nanocrystalline semiconductor: effect of hydrogen post-treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.; Bououdina, M.

    2015-06-01

    Cadmium oxide codoped with Cu and Ni ions powders was synthesised by thermal co-decomposition of a mixture of cadmium, copper, and nickel acetylacetonates. The mass ratio of Cu/Cd was fixed, while the Ni/Cd mass ratio was varied systematically. The purpose of the present study is to prepare powders having room-temperature ferromagnetic (RT-FM) properties. X-ray fluorescence (XRF) and X-ray diffraction (XRD) confirm the purity and the formation of single nanocrystalline structure of the as-prepared powders. The energy bandgap of the as-prepared powders was found to vary slightly and then increases by 3.96-38.02 % after post-H2-treatment. Magnetic measurements reveal that all as-prepared doped CdO powders gained partial (RT-FM) properties. Furthermore, the created RT-FM is dependent on the Ni% doping level. After annealing under H2 gas, a strong enhancement of RT-FM was observed, especially for 1.2 % Ni-doping-level powder where the whole powder became ferromagnetic with coercivity, remanence, and saturation magnetisation of 249.2 Oe, 4.52 memu/g, and 14.57 memu/g, respectively, representing an increase by ~241.3, 1062, and 1700 %, respectively, in comparison with the as-prepared sample. Thus, it was proved, for the first time, the possibility of producing of codoped CdO with RT-FM, where the magnetic characteristics can be tailored by doping and post-treatment under H2 atmosphere, thus a new potential candidate for dilute magnetic semiconductor (DMS).

  6. Hydrogenation thermodynamics of melt-spun magnesium rich Mg-Ni nanocrystalline alloys with the addition of multiwalled carbon nanotubes and TiF3

    NASA Astrophysics Data System (ADS)

    Hou, Xiaojiang; Hu, Rui; Zhang, Tiebang; Kou, Hongchao; Li, Jinshan

    2016-02-01

    Based on the complexity of hydrogen absorption/desorption process and from the perspective of overall control, the as-cast Mg-10wt%Ni (Mg10Ni) alloy has been successively optimized by melt-spinning and surface catalyzed to realize the internal refinement as well as surface modification. The isothermal hydrogenation behavior of modified Mg-rich alloys has been investigated in this work. The results indicate that melt-spun Mg10Ni catalyzed by multiwalled carbon nanotubes (MWCNTs) coupling with TiF3 possesses superior activation properties and can absorb 6.23 wt% at 250 °C under 2.5 MPa. It is worth mentioning that the hydrogenation capacities of Mg10Ni-MWCNTs-TiF3 are 5.93 wt% and 5.99 wt% within the initial 1 min and 5 min, respectively. Meanwhile, the catalytic effect of MWCNTs and TiF3 has been discussed. The improved activation performance as well as the thermodynamics properties of Mg10Ni catalyzed by MWCNTs and TiF3 is attributed to the synergistic effect on dissociation of H2 molecules, diffusion of H-atoms and heterogeneous nucleation of hydrides.

  7. Structural, optical, and ferromagnetic characterization of Sm-doped LaOCl nanocrystalline synthesized by solvothermal route: Significant effect of hydrogen post treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.

    2016-09-01

    Pure and Sm-doped lanthanum oxychloride (LaOCl) nanomaterials were synthesized by solvothermal route followed by a subsequent heat treatment process. The objective of the present work is to study and develop conditions required to create stable room-temperature ferromagnetic (RT-FM) properties in LaOCl. To achieve that aim, magnetic samarium Sm3+ ions were used as dopant sources for stable FM properties. Systematic structural, optical, and magnetic properties of undoped and Sm-doped LaOCl samples were investigated as function of post-annealing conditions (temperature and atmosphere). The optical absorption properties were studied by diffuse reflection spectroscopy (DRS). The magnetic measurements reveal that Sm-doped LaOCl nanopowders have partial RT-FM properties due to the doped ions. The variations of magnetic properties with pre-annealing temperature were investigated. Furthermore, the electronic medium of host LaOCl crystalline lattice, which carries the spin-spin (S.S) exchange interaction between localised dopant Sm3+(4f5) spins, was developed by annealing in hydrogen gas (hydrogenation). It was established that annealing in hydrogen atmosphere boosts the RT-FM properties so that the saturation magnetisation could be increased by more than 100%. Physical explanations and discussions were given in this paper. Thus, it was proved that the magnetic properties could be tailored to diamagnetic LaOCl compound by Sm-doping and post treatment under H2 atmosphere. Therefore, LaOCl nanocrystals could be used as a potential candidate for optical phosphor applications with magnetic properties.

  8. Nanocrystalline Heterojunction Materials

    DOEpatents

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2004-02-03

    Mesoporous nanocrystalline titanium dioxide heterojunction materials and methods of making the same are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  9. Nanocrystalline heterojunction materials

    DOEpatents

    Elder, Scott H.; Su, Yali; Gao, Yufei; Heald, Steve M.

    2003-07-15

    Mesoporous nanocrystalline titanium dioxide heterojunction materials are disclosed. In one disclosed embodiment, materials comprising a core of titanium dioxide and a shell of a molybdenum oxide exhibit a decrease in their photoadsorption energy as the size of the titanium dioxide core decreases.

  10. Mechanical properties of nanocrystalline cobalt

    NASA Astrophysics Data System (ADS)

    Karimpoor, Amir A.; Erb, Uwe

    2006-05-01

    Due to their excellent wear and corrosion properties, nanocrystalline cobalt and several cobalt alloys made by electrodeposition are currently being developed as environmentally benign replacement coatings for hard chromium electrodeposits. The focus of this study is on the mechanical properties of nanocrystalline cobalt, which are currently not well understood. A comparison is presented for hardness, tensile properties, Charpy impact properties and fracture surface analysis of both nanocrystalline (grain size: 12 nm) and conventional polycrystalline (grain size: 4.8 m) cobalt. It is shown that the hardness and tensile strength of nanocrystalline cobalt is 2-3 times higher than for polycrystalline cobalt. However, in contrast to other nanocrystalline materials tested previously, nanocrystalline cobalt retains considerable ductility with elongation to fracture values up to 7%.

  11. Transport through a single donor in p-type silicon

    NASA Astrophysics Data System (ADS)

    Miwa, J. A.; Mol, J. A.; Salfi, J.; Rogge, S.; Simmons, M. Y.

    2013-07-01

    Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ˜1 nm below the surface. The ability to image individual dopants combined with scanning tunnelling spectroscopy allows us to directly study the transport mechanism through the donor. We show that for a single P donor, transport is dominated by a minority carrier recombination process with the surrounding p-type matrix. The understanding gained will underpin future studies of atomically precise mapping of donor-donor interactions in silicon.

  12. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  13. Development of improved p-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Mclane, George; Wood, Charles; Vandersande, Jan; Raag, Valvo; Heshmatpour, Ben

    1987-01-01

    Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

  14. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  15. Synthesis of p-type GaN nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-08-01

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo

  16. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  17. Photo- and thermionic emission of MWPECVD nanocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Cicala, G.; Magaletti, V.; Valentini, A.; Nitti, M. A.; Bellucci, A.; Trucchi, D. M.

    2014-11-01

    Nanocrystalline diamond (NCD) films with and without a diamond buffer layer (BL) have been grown on p-type silicon substrates by microwave plasma enhanced chemical vapor deposition technique at different values of deposition temperature (652-884 °C). The photo- and thermionic electron emission properties of NCD films have been investigated, illustrated and explained by analyzing the surface morphology and the grain shape determined by atomic force microscopy, the chemical-structural properties by Raman spectroscopy and nanocrystallites size by X-ray diffraction. The NCD films with BL grown at the highest deposition temperature have shown the highest photo- and thermionic emission currents.

  18. P-type semiconducting gas sensing behavior of nanoporous rf sputtered CaCu{sub 3}Ti{sub 4}O{sub 12} thin films

    SciTech Connect

    Joanni, E.; Savu, R.; Bueno, P. R.; Longo, E.; Varela, J. A.

    2008-03-31

    The fabrication of nanoporous sputtered CaCu{sub 3}Ti{sub 4}O{sub 12} thin films with high gas sensitivity is reported in this work. The porous microstructure and the nanocrystalline nature of the material promoted the diffusion of the atmosphere into the film, shortening the response time of the samples. Behaving as p-type semiconductor, the material presents enhanced sensitivity even at low working temperatures. Impedance spectroscopy measurements were performed in order to investigate the mechanisms responsible for the performance of the devices.

  19. Thermoelectric properties of gallium-doped p-type germanium

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Takarada, Sho; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Miyazaki, Yoshinobu; Uchida, Noriyuki; Tada, Tetsuya

    2016-05-01

    In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 × 1016, 3.4 × 1018, and 1.0 × 1019 cm-3) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 × 1019 cm-3 showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 × 1019 cm-3 at 300 K and increased with temperature.

  20. p type doping of zinc oxide by arsenic ion implantation

    SciTech Connect

    Braunstein, G.; Muraviev, A.; Saxena, H.; Dhere, N.; Richter, V.; Kalish, R.

    2005-11-07

    p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ({approx}-196 deg. C), followed by a rapid in situ heating of the sample, at 560 deg. C for 10 min, and ex situ annealing at 900 deg. C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10{sup 13} cm{sup -2} was obtained using this approach, following implantation of 150 keV 5x10{sup 14} As/cm{sup 2}. A conventional room-temperature implantation of 1x10{sup 15} As/cm{sup 2}, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10{sup 12} cm{sup -2}.

  1. P-type conductivity in annealed strontium titanate

    DOE PAGESBeta

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-17

    In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm2/Vs). Average hole densities were in the 109-1010 cm-3 range, consistent with a deep acceptor.

  2. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  3. Processing of nanocrystalline ceramics

    SciTech Connect

    Ciftcioglu, M. . Center for Micro-Engineered Ceramics); Mayo, M.J. )

    1990-01-01

    Methods of preparing non-agglomerated powders for three systems -- yttria, titania, and yttria-stabilized zirconia -- are reviewed. The non-agglomerated nature of these powders should make it possible to sinter them into dense ceramic bodies with nanocrystalline grain sizes. Experiments with yttria-stabilized zirconia have shown that this is indeed the case, with mean linear intercept grain sizes of 60 nm resulting from original powder particle diameters of 13 nm. This ultrafine-grained zirconia is shown, in turn, to have superplastic forming rates 34 times faster than a 0.3 {mu}m-grained commercial zirconia of the same composition. 7 refs., 9 figs.

  4. X, E, M, and P-Type Asteroid Spectral Observations

    NASA Astrophysics Data System (ADS)

    Clark, B. E.; Rivkin, A. S.; Bus, S. J.; Sanders, J.

    2003-05-01

    What are the X-types made of? How would knowledge of their composition change our picture of the geological structure of the asteroid regions? X-types are important in the main belt, yet we do not understand their composition or meteorite linkage. This is an outstanding problem in asteroid-meteorite studies, because X-types comprise approximately 20% of the inner main belt (Tholen and Barucci 1989; Bus 1999). We have conducted a program of infrared (0.8-2.5microns) observations aimed at determining mineralogy without albedo information. Because X-types are spectrally like E, M, and P-type asteroids, we observed 18 X-types, 5 E-types, 8 M-types, and 4 P-types. This is the first focused study of XEMP asteroids. In this paper, we present a compositional analysis of the new spectral data. What we call XEMPs are asteroids identified as ambiguous on the basis of their visible spectral properties only (Zellner et al. 1985; Tholen 1984; Bus and Binzel 2002). By convention (Bowell et al. 1978; Tholen and Barucci 1989), X-types with measured geometric albedos are classified into E, M, or P-types, where E-types (designated ``E" based on their possible link with enstatite meteorites) are high-albedo objects, P-types are low-albedo objects (there are no meteorite analogs for these objects), and M-types (designated ``M" based on their possible link with metallic meteorites) are intermediate. Bus and Binzel (2002) found subtle features in X-class spectra in a high resolution survey. We have regrouped XEMP spectra for a reanalysis of the extended wavelength coverage now available (0.3-2.5 microns). When continuum slope is removed, we find distinct 0.9 micron bands at the level of 2-5% in many of our XEMP objects. We also find consistent wavelength maxima near 1.5 microns, and hints of 2.0 micron bands in some objects. Our preliminary findings suggest that new mineralogy-based groupings may be called for, breaking down the old albedo-based E, M, and P-type designations. We

  5. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.

    1998-01-01

    A method and system for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip.

  6. Method for the preparation of nanocrystalline diamond thin films

    DOEpatents

    Gruen, D.M.; Krauss, A.R.

    1998-06-30

    A method and system are disclosed for manufacturing nanocrystalline diamond film on a substrate such as field emission tips. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrocarbon and possibly hydrogen, and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous vapor and deposition of a diamond film on the field emission tip. 40 figs.

  7. Nanocrystalline TiAl compacts prepared by HDDR and hot pressing

    SciTech Connect

    Aoki, K.; Itoh, Y.; Kawamura, Y.; Inoue, A.; Masumoto, T.

    1997-12-31

    Nanocrystalline TiAl powder was formed by the modified HDDR (hydrogenation-disproportion-dehydrogenation-recombination) method utilizing ball milling in a hydrogen atmosphere. That is, TiAl compound powder decomposed into TiH{sub 2} and Al-rich TiAl powders by mechanical grinding in a hydrogen atmosphere (HD process). Dehydrogenation-recombination (realloying) resulted in the formation of nanocrystalline TiAl powder when heated to about 700 K in an argon atmosphere (DR process). Almost fully dense nanocrystalline TiAl compacts were prepared by a combination of HDDR and hot-pressing at 873 K which is lower than the usual consolidation temperature by about 300 K. The TiAl compact thus made was brittle in the as-pressed state but showed compressive ductility after annealing.

  8. Single electron transistor with P-type sidewall spacer gates.

    PubMed

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed. PMID:22121580

  9. Bi-Se doped with Cu, p-type semiconductor

    SciTech Connect

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  10. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-17

    In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm2/Vs). Average hole densities were in the 109-1010 cm-3 range, consistent with a deep acceptor.

  11. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  12. STRENGTH OF N- AND P-TYPE SKUTTERUDITES

    SciTech Connect

    Wereszczak, Andrew A; Ragan, Meredith E; Strong, Kevin T; Ritt, Patrick J; Wang, Hsin; Salvador, James R.; Yang, Jihui

    2010-01-01

    The failure stress distributions of developmental Yb0.27Co4Sb12.08 (n-type) and Ce0.86Co1.02Fe2.98Sb11.97 (p type) skutterudites were measured as a function of temperature. These thermoelectric materials are attractive candidates for use in devices under consideration for power generation sourced from intermediate to high-temperature waste heat recovery. A self-aligning, high-temperature-capable, three-point-bend fixture was developed and used to test specimens whose cross-sectional dimensions were equivalent to those typically used in thermoelectric device legs. The strength of the n-type skutterudite was approximately 115 MPa and independent of temperature to 500 C. The strength of the p-type skutterudite was equivalent to that of the n type material and independent of temperature to at least 200 C, but its strength dropped by ~20% at 400 C. Compared to other skutterudites, the herein tested compositions have equivalent or even superior strength.

  13. Towards High Performance p-Type Transparent Conducting Oxides

    SciTech Connect

    Roy, B.; Ode, A.; Readey, D.; Perkins, J.; Parilla, P.; Teplin, C.; Kaydanova, T.; Miedaner, A.; Curtis, C.; Martinson, A.; Coutts, T.; Ginley, D.; Hosono, H.

    2003-05-01

    P-type transparent conductive oxides would have potential applications in photovoltaics, transparent electronics and organic opto-electronics. In this paper we present results on the synthesis of Cu2SrO2, a p-type transparent conducting oxide, by a chemical solution route as well as the conventional pulse laser deposition (PLD) method. For Cu2SrO2 by the chemical solution route, samples were made by spraying deposition on quartz substrates using an aqueous solution of Copper formate and Strontium acetate. Phase pure materials were obtained by an optimum two stage annealing sequence. This initial work led to the development of good quality homogeneous films by a related sol-gel approach. We have also used pulsed laser depostion (PLD) to deposit Cu2SrO2 and CuInO2 thin films on quartz substrates. We have obtained improved conductivities in the CuInO2 thin films over previously published work. We present details on the nature of the relationship of process parameters to the opto-electronic properties of the films.

  14. Nanocrystalline silicon thin films for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Queen, Daniel; Jugdersuren, Battogtokh; Culberston, Jim; Wang, Qi; Nemeth, William; Metcalf, Tom; Liu, Xiao

    2014-03-01

    Recent advances in thermoelectric materials have come from reductions in thermal conductivity by manipulating both chemical composition and nanostructure to limit the phonon mean free path. However, wide spread applications for some of these materials may be limited due to high raw material and integration costs. In this talk we will discuss our recent results on nanocrystalline silicon thin films deposited by both hot-wire and plasma enhanced chemical vapor deposition where the nanocrystal size and crystalline volume fraction are varied by dilution of the silane precursor gas with hydrogen. Nanocyrstalline silicon is an established material technology used in multijunction amorphous silicon solar cells and has the potential to be a low cost and scalable material for use in thermoelectric devices. This work supported by the Office of Naval Research and the National Research Council.

  15. Laser induced lifetime degradation in p-type crystalline silicon

    SciTech Connect

    Ametowobla, M.; Bilger, G.; Koehler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  16. Laser induced lifetime degradation in p-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Ametowobla, M.; Bilger, G.; Köhler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime τ ≈ 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  17. Ferromagnetic states of p-type silicon doped with Mn

    NASA Astrophysics Data System (ADS)

    Yunusov, Z. A.; Yuldashev, Sh. U.; Igamberdiev, Kh. T.; Kwon, Y. H.; Kang, T. W.; Bakhadyrkhanov, M. K.; Isamov, S. B.; Zikrillaev, N. F.

    2014-05-01

    In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic state with a Curie temperature above room temperature, and that ferromagnetism was due to the Mn x B y ferromagnetic clusters. The samples with a moderate concentration of Mn at low temperatures revealed a ferromagnetic state that was mediated by carriers (holes). The samples demonstrated the anomalous Hall effect at temperatures below 100 K and had a negative magneto-resistivity peak at a temperature close to the Curie temperature. The thermal diffusivity measurements demonstrated the existence of a second-order phase transition in the samples with a moderate Mn concentration. The specific heat's critical exponent α = 0.5, determined from the thermal diffusivity measurements, confirmed the long-range nature of the magnetic exchange interaction in these samples.

  18. p-Type NiO Hybrid Visible Photodetector.

    PubMed

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light. PMID:26654105

  19. In silico identification and characterization of the ion transport specificity for P-type ATPases in the Mycobacterium tuberculosis complex

    PubMed Central

    2012-01-01

    Background P-type ATPases hydrolyze ATP and release energy that is used in the transport of ions against electrochemical gradients across plasma membranes, making these proteins essential for cell viability. Currently, the distribution and function of these ion transporters in mycobacteria are poorly understood. Results In this study, probabilistic profiles were constructed based on hidden Markov models to identify and classify P-type ATPases in the Mycobacterium tuberculosis complex (MTBC) according to the type of ion transported across the plasma membrane. Topology, hydrophobicity profiles and conserved motifs were analyzed to correlate amino acid sequences of P-type ATPases and ion transport specificity. Twelve candidate P-type ATPases annotated in the M. tuberculosis H37Rv proteome were identified in all members of the MTBC, and probabilistic profiles classified them into one of the following three groups: heavy metal cation transporters, alkaline and alkaline earth metal cation transporters, and the beta subunit of a prokaryotic potassium pump. Interestingly, counterparts of the non-catalytic beta subunits of Hydrogen/Potassium and Sodium/Potassium P-type ATPases were not found. Conclusions The high content of heavy metal transporters found in the MTBC suggests that they could play an important role in the ability of M. tuberculosis to survive inside macrophages, where tubercle bacilli face high levels of toxic metals. Finally, the results obtained in this work provide a starting point for experimental studies that may elucidate the ion specificity of the MTBC P-type ATPases and their role in mycobacterial infections. PMID:23031689

  20. Nanocrystalline diamond nanoelectrode arrays and ensembles.

    PubMed

    Hees, Jakob; Hoffmann, René; Kriele, Armin; Smirnov, Waldemar; Obloh, Harald; Glorer, Karlheinz; Raynor, Brian; Driad, Rachid; Yang, Nianjun; Williams, Oliver A; Nebel, Christoph E

    2011-04-26

    In this report, the fabrication of all-nanocrystalline diamond (NCD) nanoelectrode arrays (NEAs) by e-beam lithography as well as of all-diamond nanoelectrode ensembles (NEEs) using nanosphere lithography is presented. In this way, nanostructuring techniques are combined with the excellent properties of diamond that are desirable for electrochemical sensor devices. Arrays and ensembles of recessed disk electrodes with radii ranging from 150 to 250 nm and a spacing of 10 μm have been fabricated. Electrochemical impedance spectroscopy as well as cyclic voltammetry was conducted to characterize arrays and ensembles with respect to different diffusion regimes. One outstanding advantage of diamond as an electrode material is the stability of specific surface terminations influencing the electron transfer kinetics. On changing the termination from hydrogen- to oxygen-terminated diamond electrode surface, we observe a dependence of the electron transfer rate constant on the charge of the analyte molecule. Ru(NH(3))(6)(+2/+3) shows faster electron transfer on oxygen than on hydrogen-terminated surfaces, while the anion IrCl(6)(-2/-3) exhibits faster electron transfer on hydrogen-terminated surfaces correlating with the surface dipole layer. This effect cannot be observed on macroscopic planar diamond electrodes and emphasizes the sensitivity of the all-diamond NEAs and NEEs. Thus, the NEAs and NEEs in combination with the efficiency and suitability of the selective electrochemical surface termination offer a new versatile system for electrochemical sensing. PMID:21413786

  1. n and p type character of single molecule diodes

    NASA Astrophysics Data System (ADS)

    Zoldan, Vinícius Claudio; Faccio, Ricardo; Pasa, André Avelino

    2015-02-01

    Looking for single molecule electronic devices, we have investigated the charge transport properties of individual tetra-phenylporphyrin molecules on different substrates by ultrahigh-vacuum scanning tunneling microscopy and spectroscopy and by first-principles calculations. The tetra-phenylporphyrins with a Co atom (Co-TPP) or 2 hydrogens (H2-TPP) in the central macrocycle when deposited on Cu3Au(100) substrates showed a diode-like behavior with p and n type character, respectively. After removing the central hydrogens of H2-TPP molecule with the STM tip an ohmic behavior was measured. The rectifying effect was understood from the theoretical point of view by assuming for Co-TPP HOMO conduction and for H2-TPP LUMO conduction, both selectively elected by the hybridization of states between molecule and substrate surface.

  2. n and p type character of single molecule diodes.

    PubMed

    Zoldan, Vinícius Claudio; Faccio, Ricardo; Pasa, André Avelino

    2015-01-01

    Looking for single molecule electronic devices, we have investigated the charge transport properties of individual tetra-phenylporphyrin molecules on different substrates by ultrahigh-vacuum scanning tunneling microscopy and spectroscopy and by first-principles calculations. The tetra-phenylporphyrins with a Co atom (Co-TPP) or 2 hydrogens (H2-TPP) in the central macrocycle when deposited on Cu3Au(100) substrates showed a diode-like behavior with p and n type character, respectively. After removing the central hydrogens of H2-TPP molecule with the STM tip an ohmic behavior was measured. The rectifying effect was understood from the theoretical point of view by assuming for Co-TPP HOMO conduction and for H2-TPP LUMO conduction, both selectively elected by the hybridization of states between molecule and substrate surface. PMID:25666850

  3. n and p type character of single molecule diodes

    PubMed Central

    Zoldan, Vinícius Claudio; Faccio, Ricardo; Pasa, André Avelino

    2015-01-01

    Looking for single molecule electronic devices, we have investigated the charge transport properties of individual tetra-phenylporphyrin molecules on different substrates by ultrahigh-vacuum scanning tunneling microscopy and spectroscopy and by first-principles calculations. The tetra-phenylporphyrins with a Co atom (Co-TPP) or 2 hydrogens (H2-TPP) in the central macrocycle when deposited on Cu3Au(100) substrates showed a diode-like behavior with p and n type character, respectively. After removing the central hydrogens of H2-TPP molecule with the STM tip an ohmic behavior was measured. The rectifying effect was understood from the theoretical point of view by assuming for Co-TPP HOMO conduction and for H2-TPP LUMO conduction, both selectively elected by the hybridization of states between molecule and substrate surface. PMID:25666850

  4. Cements from nanocrystalline hydroxyapatite.

    PubMed

    Barralet, J E; Lilley, K J; Grover, L M; Farrar, D F; Ansell, C; Gbureck, U

    2004-04-01

    Calcium phosphate cements are used as bone substitute materials because they may be moulded to fill a void or defect in bone and are osteoconductive. Although apatite cements are stronger than brushite cements, they are potentially less resorbable in vivo. Brushite cements are three-component systems whereby phosphate ions and water react with a soluble calcium phosphate to form brushite (CaHPO4 x 2H2O). Previously reported brushite cement formulations set following the mixture of a calcium phosphate, such as beta-tricalcium phosphate (beta-TCP), with an acidic component such as H3PO4 or monocalcium phosphate monohydrate (MCPM). Due to its low solubility, hydroxyapatite (HA) is yet to be reported as a reactive component in calcium phosphate cement systems. Here we report a new cement system setting to form a matrix consisting predominantly of brushite following the mixture of phosphoric acid with nanocrystalline HA. As a result of the relative ease with which ionic substitutions may be made in apatite this route may offer a novel way to control cement composition or setting characteristics. Since kinetic solubility is dependent on particle size and precipitation temperature is known to affect precipitated HA crystal size, the phase composition and mechanical properties of cements made from HA precipitated at temperatures between 4 and 60 degrees C were investigated. PMID:15332608

  5. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  6. Electronic processes in uniaxially stressed p-type germanium

    SciTech Connect

    Dubon, O.D. Jr.

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  7. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Müller, St.; Böntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×1014 H+ cm-2 to 1.0×1018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×1015 H+ cm-2 and 1.2×1017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  8. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    SciTech Connect

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki; Hai, Pham Nam

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  9. Challenges in p-type Doping of CdTe

    NASA Astrophysics Data System (ADS)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  10. Dislocation dynamics in nanocrystalline nickel.

    PubMed

    Shan, Z W; Wiezorek, J M K; Stach, E A; Follstaedt, D M; Knapp, J A; Mao, S X

    2007-03-01

    It is believed that the dynamics of dislocation processes during the deformation of nanocrystalline materials can only be visualized by computational simulations. Here we demonstrate that observations of dislocation processes during the deformation of nanocrystalline Ni with grain sizes as small as 10 nm can be achieved by using a combination of in situ tensile straining and high-resolution transmission electron microscopy. Trapped unit lattice dislocations are observed in strained grains as small as 5 nm, but subsequent relaxation leads to dislocation recombination. PMID:17359167

  11. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  12. Membrane Targeting of P-type ATPases in Plant Cells

    SciTech Connect

    Jeffrey F. Harper, Ph.D.

    2004-06-30

    How membrane proteins are targeted to specific subcellular locations is a very complex and poorly understood area of research. Our long-term goal is to use P-type ATPases (ion pumps), in a model plant system Arabidopsis, as a paradigm to understand how members of a family of closely related membrane proteins can be targeted to different subcellular locations. The research is divided into two specific aims. The first aim is focused on determining the targeting destination of all 10 ACA-type calcium pumps (Arabidopsis Calcium ATPase) in Arabidopsis. ACAs represent a plant specific-subfamily of plasma membrane-type calcium pumps. In contrast to animals, the plant homologs have been found in multiple membrane systems, including the ER (ACA2), tonoplast (ACA4) and plasma membrane (ACA8). Their high degree of similarity provides a unique opportunity to use a comparative approach to delineate the membrane specific targeting information for each pump. One hypothesis to be tested is that an endomembrane located ACA can be re-directed to the plasma membrane by including targeting information from a plasma membrane isoform, ACA8. Our approach is to engineer domain swaps between pumps and monitor the targeting of chimeric proteins in plant cells using a Green Fluorescence Protein (GFP) as a tag. The second aim is to test the hypothesis that heterologous transporters can be engineered into plants and targeted to the plasma membrane by fusing them to a plasma membrane proton pump. As a test case we are evaluating the targeting properties of fusions made between a yeast sodium/proton exchanger (Sod2) and a proton pump (AHA2). This fusion may potentially lead to a new strategy for engineering salt resistant plants. Together these aims are designed to provide fundamental insights into the biogenesis and function of plant cell membrane systems.

  13. Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

    SciTech Connect

    Liu, F. B.; Jing, B.; Cui, Y.; Di, J. J.; Qu, M.

    2015-04-15

    The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond film are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed.

  14. Computational approaches for classification and prediction of P-type ATPase substrate specificity in Arabidopsis.

    PubMed

    Zinati, Zahra; Alemzadeh, Abbas; KayvanJoo, Amir Hossein

    2016-01-01

    As an extended gamut of integral membrane (extrinsic) proteins, and based on their transporting specificities, P-type ATPases include five subfamilies in Arabidopsis, inter alia, P4ATPases (phospholipid-transporting ATPase), P3AATPases (plasma membrane H(+) pumps), P2A and P2BATPases (Ca(2+) pumps) and P1B ATPases (heavy metal pumps). Although, many different computational methods have been developed to predict substrate specificity of unknown proteins, further investigation needs to improve the efficiency and performance of the predicators. In this study, various attribute weighting and supervised clustering algorithms were employed to identify the main amino acid composition attributes, which can influence the substrate specificity of ATPase pumps, classify protein pumps and predict the substrate specificity of uncharacterized ATPase pumps. The results of this study indicate that both non-reduced coefficients pertaining to absorption and Cys extinction within 280 nm, the frequencies of hydrogen, Ala, Val, carbon, hydrophilic residues, the counts of Val, Asn, Ser, Arg, Phe, Tyr, hydrophilic residues, Phe-Phe, Ala-Ile, Phe-Leu, Val-Ala and length are specified as the most important amino acid attributes through applying the whole attribute weighting models. Here, learning algorithms engineered in a predictive machine (Naive Bays) is proposed to foresee the Q9LVV1 and O22180 substrate specificities (P-type ATPase like proteins) with 100 % prediction confidence. For the first time, our analysis demonstrated promising application of bioinformatics algorithms in classifying ATPases pumps. Moreover, we suggest the predictive systems that can assist towards the prediction of the substrate specificity of any new ATPase pumps with the maximum possible prediction confidence. PMID:27186030

  15. LASER COMPRESSION OF NANOCRYSTALLINE METALS

    SciTech Connect

    Meyers, M. A.; Jarmakani, H. N.; Bringa, E. M.; Earhart, P.; Remington, B. A.; Vo, N. Q.; Wang, Y. M.

    2009-12-28

    Shock compression in nanocrystalline nickel is simulated over a range of pressures (10-80 GPa) and compared with experimental results. Laser compression carried out at Omega and Janus yields new information on the deformation mechanisms of nanocrystalline Ni. Although conventional deformation does not produce hardening, the extreme regime imparted by laser compression generates an increase in hardness, attributed to the residual dislocations observed in the structure by TEM. An analytical model is applied to predict the critical pressure for the onset of twinning in nanocrystalline nickel. The slip-twinning transition pressure is shifted from 20 GPa, for polycrystalline Ni, to 80 GPa, for Ni with g. s. of 10 nm. Contributions to the net strain from the different mechanisms of plastic deformation (partials, perfect dislocations, twinning, and grain boundary shear) were quantified in the nanocrystalline samples through MD calculations. The effect of release, a phenomenon often neglected in MD simulations, on dislocation behavior was established. A large fraction of the dislocations generated at the front are annihilated.

  16. Picosecond intersubband hole relaxation in p-type quantum wells

    SciTech Connect

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-12-31

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}Ga{sub 0.5}As periods. The In{sub 0.5}Ga{sub 0.5}As well was 4 nm wide and the Al{sub 0.5}Ga{sub 0.5}As barrier was 8 nm wide. The dopant concentration was 10{sup 19} CM{sup -3} which corresponds to a sheet density of 1.2 x 10{sup 13} CM{sup -2}. The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 {mu}m (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 {mu} m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm{sup 2}). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm{sup 2} and saturates to {approximately}3% with a saturation intensity I{sub sat} of 3 GW/cm{sup 2}. As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements.

  17. Thermal spraying of nanocrystalline materials

    NASA Astrophysics Data System (ADS)

    Lau, Maggy L.

    The present research addresses the fundamental synergism between thermal spray synthesis, microstructural evolution and mechanical behavior of Ni, Inconel 718 and Fe based 316-stainless steel nanocrystalline materials. Nanocrystalline Ni powders produced by mechanical milling in liquid nitrogen were investigated under isothermal and non-isothermal conditions. Significant grain growth occurred in the case of cryomilled Ni powders even when annealing at lower temperatures (equivalent to about 0.17 Tm), indicating the poor thermal stability of these powders. The activation energy for grain growth was calculated to be 146.2 kJ/mol. The values of the time exponent, n, were very close to 4.0, implying that grain growth was controlled by grain boundary diffusion mechanism. The grain growth behavior of the nanocrystalline Ni powders under non-isothermal annealing conditions showed good correspondence between the experimental results and the theoretical simulation. The grain growth behavior of the milled Inconel 718 powders and coatings, under isothermal annealing indicated that the nanocrystalline powders and coatings exhibited thermal stability against grain growth up to 1073 K (0.67Tm). The average grain sizes of methanol milled powders after annealing at 1273 K for 1 hr, cryomilled powders, HVOF coating of the methanol milled powders and HVOF coatings of the cryomilled Inconel 718 powders were 91, 84, 137 and 102 nm, respectively. In the present study, Zener pinning of nanoscale oxides of (Cr,Fe) contributed to the stability against grain growth during thermal annealing of the nanocrystalline Inconel 718 powders and coatings. (Abstract shortened by UMI.)

  18. Gas sensing properties of nanocrystalline diamond at room temperature

    PubMed Central

    Kulha, Pavel; Laposa, Alexandr; Hruska, Karel; Demo, Pavel; Kromka, Alexander

    2014-01-01

    Summary This study describes an integrated NH3 sensor based on a hydrogenated nanocrystalline diamond (NCD)-sensitive layer coated on an interdigitated electrode structure. The gas sensing properties of the sensor structure were examined using a reducing gas (NH3) at room temperature and were found to be dependent on the electrode arrangement. A pronounced response of the sensor, which was comprised of dense electrode arrays (of 50 µm separation distance), was observed. The sensor functionality was explained by the surface transfer doping effect. Moreover, the three-dimensional model of the current density distribution of the hydrogenated NCD describes the transient flow of electrons between interdigitated electrodes and the hydrogenated NCD surface, that is, the formation of a closed current loop. PMID:25551062

  19. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  20. Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.

    PubMed

    Izak, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

    2015-05-01

    We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring. PMID:25835144

  1. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  2. Comparative chemical genomics reveal that the spiroindolone antimalarial KAE609 (Cipargamin) is a P-type ATPase inhibitor.

    PubMed

    Goldgof, Gregory M; Durrant, Jacob D; Ottilie, Sabine; Vigil, Edgar; Allen, Kenneth E; Gunawan, Felicia; Kostylev, Maxim; Henderson, Kiersten A; Yang, Jennifer; Schenken, Jake; LaMonte, Gregory M; Manary, Micah J; Murao, Ayako; Nachon, Marie; Stanhope, Rebecca; Prescott, Maximo; McNamara, Case W; Slayman, Carolyn W; Amaro, Rommie E; Suzuki, Yo; Winzeler, Elizabeth A

    2016-01-01

    The spiroindolones, a new class of antimalarial medicines discovered in a cellular screen, are rendered less active by mutations in a parasite P-type ATPase, PfATP4. We show here that S. cerevisiae also acquires mutations in a gene encoding a P-type ATPase (ScPMA1) after exposure to spiroindolones and that these mutations are sufficient for resistance. KAE609 resistance mutations in ScPMA1 do not confer resistance to unrelated antimicrobials, but do confer cross sensitivity to the alkyl-lysophospholipid edelfosine, which is known to displace ScPma1p from the plasma membrane. Using an in vitro cell-free assay, we demonstrate that KAE609 directly inhibits ScPma1p ATPase activity. KAE609 also increases cytoplasmic hydrogen ion concentrations in yeast cells. Computer docking into a ScPma1p homology model identifies a binding mode that supports genetic resistance determinants and in vitro experimental structure-activity relationships in both P. falciparum and S. cerevisiae. This model also suggests a shared binding site with the dihydroisoquinolones antimalarials. Our data support a model in which KAE609 exerts its antimalarial activity by directly interfering with P-type ATPase activity. PMID:27291296

  3. Comparative chemical genomics reveal that the spiroindolone antimalarial KAE609 (Cipargamin) is a P-type ATPase inhibitor

    PubMed Central

    Goldgof, Gregory M.; Durrant, Jacob D.; Ottilie, Sabine; Vigil, Edgar; Allen, Kenneth E.; Gunawan, Felicia; Kostylev, Maxim; Henderson, Kiersten A.; Yang, Jennifer; Schenken, Jake; LaMonte, Gregory M.; Manary, Micah J.; Murao, Ayako; Nachon, Marie; Stanhope, Rebecca; Prescott, Maximo; McNamara, Case W.; Slayman, Carolyn W.; Amaro, Rommie E.; Suzuki, Yo; Winzeler, Elizabeth A.

    2016-01-01

    The spiroindolones, a new class of antimalarial medicines discovered in a cellular screen, are rendered less active by mutations in a parasite P-type ATPase, PfATP4. We show here that S. cerevisiae also acquires mutations in a gene encoding a P-type ATPase (ScPMA1) after exposure to spiroindolones and that these mutations are sufficient for resistance. KAE609 resistance mutations in ScPMA1 do not confer resistance to unrelated antimicrobials, but do confer cross sensitivity to the alkyl-lysophospholipid edelfosine, which is known to displace ScPma1p from the plasma membrane. Using an in vitro cell-free assay, we demonstrate that KAE609 directly inhibits ScPma1p ATPase activity. KAE609 also increases cytoplasmic hydrogen ion concentrations in yeast cells. Computer docking into a ScPma1p homology model identifies a binding mode that supports genetic resistance determinants and in vitro experimental structure-activity relationships in both P. falciparum and S. cerevisiae. This model also suggests a shared binding site with the dihydroisoquinolones antimalarials. Our data support a model in which KAE609 exerts its antimalarial activity by directly interfering with P-type ATPase activity. PMID:27291296

  4. FAST TRACK COMMUNICATION: Nanocrystalline silicon film growth morphology control through RF waveform tailoring

    NASA Astrophysics Data System (ADS)

    Johnson, Erik V.; Verbeke, Thomas; Vanel, Jean-Charles; Booth, Jean-Paul

    2010-10-01

    We demonstrate the application of RF waveform tailoring to generate an electrical asymmetry in a capacitively coupled plasma-enhanced chemical vapour deposition system, and its use to control the growth mode of hydrogenated amorphous and nanocrystalline silicon thin films deposited at low temperature (150 °C). A dramatic shift in the dc bias potential at the powered electrode is observed when simply inverting the voltage waveform from 'peaks' to 'troughs', indicating an asymmetric distribution of the sheath voltage. By enhancing or suppressing the ion bombardment energy at the substrate (situated on the grounded electrode), the growth of thin silicon films can be switched between amorphous and nanocrystalline modes, as observed using in situ spectroscopic ellipsometry. The effect is observed at pressures sufficiently low that the collisional reduction in average ion bombardment energy is not sufficient to allow nanocrystalline growth (<100 mTorr).

  5. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices. PMID:19076042

  6. Structure of nanocrystalline palladium and copper studied by small angle neutron scattering

    SciTech Connect

    Sanders, P.G.; Weertman, J.R.; Barker, J.G.

    1996-12-01

    The structure of nanocrystalline palladium and copper, made by inert gas condensation and compaction, was studied using small angle neutron scattering (SANS), optical microscopy, and scanning electron microscopy. The effects of annealing and warm compaction were also examined with these techniques. The SANS results were interpreted using a maximum entropy routine, combined with knowledge of the Archimedes density and hydrogen concentration determined by prompt gamma activation analysis (PGAA). Similar hydrogen concentrations were detected by SANS and PGAA. This hydrogen content, which was approximately 5 at.{percent} in samples compacted at room temperature, was reduced by both annealing and warm compaction. Defects in several size classes were observed, including missing grain pores ({approx_equal}1{endash}50 nm diameter) and defects of micrometer size. Warm compaction produced a lower number density of pores in nanocrystalline palladium, which led to increased density. The observed structure was correlated with Vickers microhardness and fracture surface morphology. {copyright} {ital 1996 Materials Research Society.}

  7. Pore distributions in nanocrystalline metals from small-angle neutron scattering

    SciTech Connect

    Sanders, P.G.; Weertman, J.R.; Eastman, J.A.

    1998-07-24

    Recent upgrades in inert-gas condensation processing equipment have produced nanocrystalline metal samples with high densities and low-impurity levels. Typical Cu and Pd samples have densities {ge}98% of theoretical and oxygen and hydrogen impurity concentrations {le}0.5 at. %. Lower porosity and impurity levels may make it difficult to produce and maintain samples with the smallest nanocrystalline grain sizes. These improved samples were studied by small-angle neutron scattering (SANS) to determine the volume fraction and size distribution of pores. Excellent correlation was obtained between the total volume fraction of pores and the Archimedes density for Pd, signifying that most of the pores were relatively small and in the detectability range of SANS ({approx}1--100 nm). Nanocrystalline Cu is shown to exhibit a wider pore size distribution. For Pd, the average pore sizes were slightly smaller than the average grain size, while for Cu the pore size and grain size were about the same. Both materials exhibited a trend of increasing pore size with increasing grain size. In terms of processing prerequisites, the principal condition for the production of high-density nanocrystalline Cu is an exceptionally clean synthesis environment, while nanocrystalline Pd requires compaction at elevated temperatures. These differences are the result of Cu having both a lower melting point and a greater susceptibility to contamination by gaseous impurities such as oxygen.

  8. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes R.

    1996-03-26

    A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

  9. Method of making nanocrystalline alpha alumina

    DOEpatents

    Siegel, Richard W.; Hahn, Horst; Eastman, Jeffrey A.

    1992-01-01

    Method of making selected phases of nanocrystalline ceramic materials. Various methods of controlling the production of nanocrystalline alpha alumina and titanium oxygen phases are described. Control of the gas atmosphere and use of particular oxidation treatments give rise to the ability to control the particular phases provided in the aluminum/oxygen and titanium/oxygen system.

  10. Functionalization of nanocrystalline diamond films with phthalocyanines

    NASA Astrophysics Data System (ADS)

    Petkov, Christo; Reintanz, Philipp M.; Kulisch, Wilhelm; Degenhardt, Anna Katharina; Weidner, Tobias; Baio, Joe E.; Merz, Rolf; Kopnarski, Michael; Siemeling, Ulrich; Reithmaier, Johann Peter; Popov, Cyril

    2016-08-01

    Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

  11. Large piezoresistive effect in surface conductive nanocrystalline diamond

    SciTech Connect

    Janssens, S. D. Haenen, K.; Drijkoningen, S.

    2014-09-08

    Surface conductivity in hydrogen-terminated single crystal diamond is an intriguing phenomenon for fundamental reasons as well as for application driven research. Surface conductivity is also observed in hydrogen-terminated nanocrystalline diamond although the electronic transport mechanisms remain unclear. In this work, the piezoresistive properties of intrinsic surface conductive nanocrystalline diamond are investigated. A gauge factor of 35 is calculated from bulging a diamond membrane of 350 nm thick, with a diameter of 656 μm and a sheet resistance of 1.45 MΩ/sq. The large piezoresistive effect is reasoned to originate directly from strain-induced changes in the resistivity of the grain boundaries. Additionally, we ascribe a small time-dependent fraction of the piezoresistive effect to charge trapping of charge carriers at grain boundaries. In conclusion, time-dependent piezoresistive effect measurements act as a tool for deeper understanding the complex electronic transport mechanisms induced by grain boundaries in a polycrystalline material or nanocomposite.

  12. Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1-x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells.

    PubMed

    Xu, Xiaojie; Bullock, James; Schelhas, Laura T; Stutz, Elias Z; Fonseca, Jose J; Hettick, Mark; Pool, Vanessa L; Tai, Kong Fai; Toney, Michael F; Fang, Xiaosheng; Javey, Ali; Wong, Lydia Helena; Ager, Joel W

    2016-03-01

    P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV). PMID:26855162

  13. Deformation behavior and microstructural evolution of nanocrystalline aluminum alloys and composites

    NASA Astrophysics Data System (ADS)

    Ahn, Byungmin

    Nanocrystalline or ultrafine-grained Al alloys are often produced by severe plastic deformation methods and exhibit remarkably enhanced strength and hardness compared to conventional coarse-grained materials, resulting in great potential for structural applications. To achieve nanocrystalline structure, grains were refined by cryomilling (mechanical milling at cryogenic temperature) pre-alloyed powders. Cryomilling provides capability for rapid grain refinement and synthesis of commercial quantities (30-40 kg). The cryomilled powder was primarily consolidated by hot or cold isostatic pressing in general. Secondary consolidation was achieved by extrusion or forging. Alternatively, quasi-isostatic forging was applied either as an initial consolidation or as a further deformation step. To improve insufficient ductility and toughness of nanocrystalline materials, an intelligent design with microstructural modification was introduced by generation of multiple size scales. A bimodal grain structure consisting of nanocrystalline grains and inclusions of coarse-grained material was produced by consolidation of blended powders. The resulting materials exhibited enhanced ductility compared to 100% nanocrystalline materials, with only moderate decreases in strength. A similar process was used to produce hybrid trimodal microstructures comprised of regions of nanocrystalline and coarse grains, as well as hard ceramic particles, providing super-high compressive strength. For cryomilled nanocrystalline Al alloys, effects of degassing temperature were investigated in terms of microstructural evolution. Higher degassing temperatures resulted in higher density and lower hydrogen content, which can reduce loss of toughness in consolidated materials. Different consolidation methods were compared with regard to the relation between the microstructures and mechanical properties. Quasi-isostatic forging led to greater and more isotropic fracture toughness, compared with other processing

  14. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  15. Piezoresistance behaviors of p-type 6H-SiC nanowires.

    PubMed

    Gao, Fengmei; Zheng, Jinju; Wang, Mingfang; Wei, Guodong; Yang, Weiyou

    2011-11-21

    We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors. PMID:21959148

  16. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates

    SciTech Connect

    Lenshin, A. S. Kashkarov, V. M.; Seredin, P. V.; Spivak, Yu. M.; Moshnikov, V. A.

    2011-09-15

    The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates.

  17. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established. PMID:19318259

  18. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy. PMID:24205635

  19. Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

    SciTech Connect

    Cheng Qijin; Xu, S.

    2007-09-01

    Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X{<=}33%) in the gas mixture employed in our experiments.

  20. Thermal Conductivity of Nanocrystalline Silicon Prepared by Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kearney, Brian; Liu, Xiao; Jugdersuren, Battogtokh; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Stroud, Rhonda; Nemeth, William; Wang, Qi

    2015-03-01

    Thin film nanocrystalline silicon prepared by chemical-vapor deposition is an established material used in multijunction amorphous silicon solar cells. Its potential in low cost and scalable thermoelectric applications depends on the reducing grain sizes to nanometers while simultaneously maintaining a high crystalline to amorphous ratio. In this work, we show that by varying the hydrogen dilution of silane gas flow during deposition, we can reduce average grain sizes to a few nanometers while still maintaining ~ 90% crystallinity of the material. Annealing at 600 °C improves crystalline content with only a small increase of the grain sizes. The values of thermal conductivity, measured from 85 K to room temperature as function of hydrogen dilution ratio from full amorphous to nanocrystalline silicon, remain at a level that is typical for amorphous silicon. Office of Naval Research.

  1. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    SciTech Connect

    Sun, Chang Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  2. Multifunctionality of nanocrystalline lanthanum ferrite

    NASA Astrophysics Data System (ADS)

    Rai, Atma; Thakur, Awalendra K.

    2016-05-01

    Nanocrystalline lanthanum ferrite has been synthesized by adopting modified Pechini route. No evidence of impurity or secondary phase has been detected up to the detection of error limit of X-ray diffractometer (XRD). Rietveld refinement of X-ray diffraction pattern reveals orthorhombic crystal system with space group Pnma (62).Crystallite size and lattice strain was found to be ˜42.8nm and 0.306% respectively. Optical band gap was found to be 2.109 eV, by UV-Visible diffused reflectance spectrum (DRS). Brunauer-Emmet-Teller (BET) surface area was found to be ˜3.45 m2/g. Magnetization-hysteresis (M-H) loop was recorded at room temperature (300K) reveals weak ferromagnetism in Nanocrystalline lanthanum ferrite. The weak ferromagnetism in lanthanum ferrite is due to the uncompensated antiferromagnetic spin ordering. Ferroelectric loop hysteresis observed at room temperature at 100Hz depicts the presence of ferroelectric ordering in LaFeO3.Simultanious presence of magnetic and ferroelectric ordering at room temperature makes it suitable candidate of Multiferroic family.

  3. Combinatorial discovery through a distributed outreach program: investigation of the photoelectrolysis activity of p-type Fe, Cr, Al oxides.

    PubMed

    Rowley, John G; Do, Thanh D; Cleary, David A; Parkinson, B A

    2014-06-25

    We report the identification of a semiconducting p-type oxide containing iron, aluminum, and chromium (Fe2-x-yCrxAlyO3) with previously unreported photoelectrolysis activity that was discovered by an undergraduate scientist participating in the Solar Hydrogen Activity research Kit (SHArK) program. The SHArK program is a distributed combinatorial science outreach program designed to provide a simple and inexpensive way for high school and undergraduate students to participate in the search for metal oxide materials that are active for the photoelectrolysis of water. The identified Fe2-x-yCrxAlyO3 photoelectrolysis material possesses many properties that make it a promising candidate for further optimization for potential application in a photoelectrolysis device. In addition to being composed of earth abundant elements, the FeCrAl oxide material has a band gap of 1.8 eV. Current-potential measurements for Fe2-x-yCrxAlyO3 showed an open circuit photovoltage of nearly 1 V; however, the absorbed photon conversion efficiency for hydrogen evolution was low (2.4 × 10(-4) at 530 nm) albeit without any deposited hydrogen evolution catalyst. X-ray diffraction of the pyrolyzed polycrystalline thin Fe2-x-yCrxAlyO3 film on fluorine-doped tin oxide substrates shows a hexagonal phase (hematite structure) and scanning electron microscope images show morphology consisting of small crystallites. PMID:24670777

  4. Morphological, luminescence and structural properties of nanocrystalline silicon thin films

    SciTech Connect

    Ali, Atif Mossad; Kobayashi, Hikaru; Inokuma, Takao; Al-Hajry, Ali

    2013-03-15

    Highlights: ► The PL spectra showed two stronger peaks and one weaker peak. ► The PL peak energies and optical band-gap values were found higher than 1.12 eV. ► The structural change from an amorphous to nanocrystalline with increasing [SiH{sub 4}]. - Abstract: Nanocrystalline silicon (nc-Si) thin films deposited by plasma-enhanced chemical vapor deposition at various silane flow rates ([SiH{sub 4}]) are studied. The characterization of these films by high-resolution transmission electron microscopy, Raman spectroscopy and X-ray diffraction reveals that no film and very thin film is deposited at [SiH{sub 4}] = 0.0 and 0.1 sccm, respectively. In addition, the structural change from an amorphous to a nanocrystalline phase occurs at around [SiH{sub 4}] = 0.2 sccm. In this study, the importance of arriving species at surfaces and precursors is clearly demonstrated by the effect of a small addition of SiH{sub 4} on the frequency and width of a Raman peak and the structure of the grown film. The infrared spectroscopic analysis shows no hydrogen incorporation in the nc-Si film deposited at the low value of [SiH{sub 4}]. However, the intensity of the peak around 2100 cm{sup −1} due to SiH decreases with increasing [SiH{sub 4}]. All fabricated films give photoluminescence in the range between 1.7 and 2.4 eV at room temperature, indicating enlargement of the band-gap energy. The presence of very small crystallites leads to the appearance of quantum confinement effects. The variations of the photoluminescence energy and spectral width are well correlated with the structural properties of the films such as crystallite size, crystalline volume fraction, and the density of Si-H bonds.

  5. Tailoring the Matrix in Ultra-Nanocrystalline Diamond Films

    NASA Astrophysics Data System (ADS)

    Buck, Volker; Woehrl, Nicolas

    2008-10-01

    By depositing films in argon-rich plasmas it is possible to produce ultra-nanocrystalline diamond (UNCD) films with grain sizes of 5-100 nm. By reducing the grain size, these films feature rather distinctive combinations of properties making them potential materials for emerging technological developments such as nano/micro-electro-mechanical systems (N/MEMS), optical coatings, bioelectronics, surface acoustic wave (SAW) filters, and tribological applications. The majority of works dealing with nanocrystalline diamond (NCD) up to now have concentrated on diamond grains (e.g., grain size, texture). In doing so the surrounding crystal matrix has been neglected and its effect on the substrate properties has been dismissed as a grain boundary effect. This view does not accord with its relevance to film properties. Because the matrix consists of amorphous carbon structures, approved methods for the characterization of this appropriate special class of materials were used here such as Raman and Fourier transform infrared spectroscopy (FTIR). The use of an amorphous matrix for nanocrystalline diamond grains has lead to an enormous field of new materials, because a whole class of carbon-based materials (diamondlike carbon, DLC) can be used as a matrix that may contain only carbon (a-C) or carbon and hydrogen (a-C:H) as well as other components such as metals (Me-C:H); additionally, other dopants such as silicon, oxygen, halogens, or nitrogen may be included. As an example, it is shown how the mechanical stress in films can be adjusted by tailoring the matrix.

  6. Thermal stability of nanocrystalline microstructures

    NASA Astrophysics Data System (ADS)

    Darling, Kris Allen

    The objective of the proposed research is to develop the experimental data and scientific basis that can optimize the thermodynamic stabilization of a nanoscale microstructure during consolidation of Fe powder particles through select solute diffusion to grain boundaries. Fe based alloys were high energy ball milled to produce supersaturated solid solutions with a nominal grain size of ˜10nm. Solutes such as Y, W, Ta, Ni and Zr were selected based on their propensity to grain boundary segregated in Fe. Based on preliminary heat treatments Zr was selected as the solute of choice. Upon further heat treating experiments and microstructural analysis it was found that Zr solute additions of <4at% could stabilize a nanocrystalline microstructure of <100nm at temperatures in excess of 900°C. This is in stark comparison to pure nanocrystalline Fe which shows coarsening to the micron scale after annealing above 600°C. Reduction in grain boundary energy due to Zr segregation and solute drag are proposed as mechanism responsible for the observed thermal stability. In addition to the work presented on Fe based Zr alloys supplementary research is presented on the following systems: Fe based Ni alloys, Pd 20at%Zr, Cu3Ge and CuGeO3. The addition of Ni to Fe was selected as a control. Since Ni and Fe have similar atomic radii, the elastic enthalpy of segregation of Ni in Fe is low (+1kJ/mol) and at high temperatures Ni has complete solid solubility in Fe; it is suggested that Ni will have a negligible influence in the thermal stability of nanocrystalline Fe. It was shown that at 700°C the addition of 1at% Ni produce a bimodal microstructure consisting of ˜70% abnormally grown grains and ˜30% nanocrystalline grains of 100-200nm. While these results are interesting extensive work is still needed to understand the mechanisms governing the thermal stability in this system. A presentation of the collected data is given. Pd 20 at% Zr was high energy ball milled to produce an

  7. Design of Shallow p-type Dopants in ZnO (Presentation)

    SciTech Connect

    Wei, S.H.; Li, J.; Yan. Y.

    2008-05-01

    ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

  8. High performance p-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2005-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  9. Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2014-02-28

    Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

  10. Grain boundary effect on the dielectric properties of nanocrystalline beta-CuSCN.

    PubMed

    Prakash, T; Ramasamy, S

    2009-09-01

    The physics of grain boundaries in semiconductors is of interest both from a fundamental as well as technical point of view because they play crucial role in controlling properties. The grain boundary effect in the nanocrystalline materials are more because the volume fraction of atoms lying at the grain boundaries of the nanocrystalline materials are more as compared with conventional coarse-grained polycrystalline materials. The most attractive hole transporting electrolyte material of dye sensitized solar cell is CuSCN because of its band gap, valence band edge position and p-type semiconducting nature. We have synthesised nanocrystalline beta phase of CuSCN using co-precipitation technique. The grain boundary effect on the dielectric behaviour has been investigated using impedance spectroscopy in a wide frequency range 1 Hz to 1 MHz under dc bias voltages 0 V to -4.2 V. The results are analyzed with double (or back-to-back) Schottky grain boundary barrier model and discussed in detail. PMID:19928259

  11. Nanocrystalline silicon based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  12. Micromechanics Modeling of Fracture in Nanocrystalline Metals

    NASA Technical Reports Server (NTRS)

    Glaessgen, E. H.; Piascik, R. S.; Raju, I. S.; Harris, C. E.

    2002-01-01

    Nanocrystalline metals have very high theoretical strength, but suffer from a lack of ductility and toughness. Therefore, it is critical to understand the mechanisms of deformation and fracture of these materials before their full potential can be achieved. Because classical fracture mechanics is based on the comparison of computed fracture parameters, such as stress intlmsity factors, to their empirically determined critical values, it does not adequately describe the fundamental physics of fracture required to predict the behavior of nanocrystalline metals. Thus, micromechanics-based techniques must be considered to quanti@ the physical processes of deformation and fracture within nanocrystalline metals. This paper discusses hndamental physicsbased modeling strategies that may be useful for the prediction Iof deformation, crack formation and crack growth within nanocrystalline metals.

  13. Alternative designs for nanocrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Madhavan, Atul

    Nanocrystalline silicon is an attractive material for solar cells. It has very small grains, about 20 nm, and yet its electronic properties are very similar to those of crystalline silicon. The material exhibits smaller mobilities than crystalline Silicon, but the minority carrier lifetimes are reasonable. It is known that the properties of the material depend critically upon deposition parameters, in particular, the degree of grain boundary passivation achieved during growth and grain size. Previous work has shown that as the material grows, the grains tend to agglomerate into a cluster, and the development of this cluster leads to poorer electronic properties. The traditional method for overcoming such clustering has been to change the hydrogen to silane dilution ratio as the material grows, keeping the material near its crystalline to amorphous transition zone. However, this method is dependent upon the precise growth chemistry and is not suitable for mass production. In this project, we develop a new device design, a superlattice comprising alternating layers of amorphous and nanocrystalline silicon, which allows one to precisely control the agglomeration of grains without having to resort to hydrogen profiling techniques. We study structural properties such as grain size and the degree of crystallnity, and electronic properties such as carrier diffusion lengths and defect densities. We show that an appropriate design of the superlattice allows one to minimize defect densities and maximize carrier diffusion lengths. We also study how to reduce series resistance in solar cells, and show that an appropriate combination of superlattice and contacts can lead to devices with high fill factors and good solar cell efficiencies. We also report on a new discovery, namely that the optical absorption itself depends critically upon grain size. Larger grain sizes, up to 50 nm, lead to increased optical absorption, a totally unexpected and very useful discovery for devices

  14. Sol-gel method of p-type zinc oxide films preparation

    NASA Astrophysics Data System (ADS)

    Poghosyan, Armen R.; Li, XiaoNan; Manukyan, Alexandr L.; Grigoryan, Stepan G.; Vardanyan, Eduard S.

    2007-09-01

    Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes and laser diodes. It is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material. Here we present our investigations of p-type ZnO thin film preparation by sol-gel method using single Li doping and Ga(Al)+N codoping technique. ZnO thin films with c-axis orientation have been prepared on glass substrates. Zn acetate dihydrate, gallium nitrate and acetamide were used as zinc, gallium and nitrogen precursors respectively. SEM, X-ray diffraction, electric conductivity and Hall effect measurements were carried out. The results show that p-type conducting ZnO films with hole concentrations as high as 5x10 17 cm -3 were obtained by this method.

  15. Opto-electrical properties of Sb-doped p-type ZnO nanowires

    SciTech Connect

    Kao, Tzu-Hsuan; Chen, Jui-Yuan; Chiu, Chung-Hua; Huang, Chun-Wei; Wu, Wen-Wei

    2014-03-17

    P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.

  16. Nanocrystalline diamond synthesized from C60

    SciTech Connect

    Dubrovinskaia, N.; Dubrovinsky, L.; Langehorst, F.; Jacobsen, S.; Liebske, C.

    2010-11-30

    A bulk sample of nanocrystalline cubic diamond with crystallite sizes of 5-12 nm was synthesized from fullerene C{sub 60} at 20(1) GPa and 2000 C using a multi-anvil apparatus. The new material is at least as hard as single crystal diamond. It was found that nanocrystalline diamond at high temperature and ambient pressure kinetically is more stable with respect to graphitization than usual diamonds.

  17. Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

    DOEpatents

    Carlisle, John A.; Gruen, Dieter M.; Auciello, Orlando; Xiao, Xingcheng

    2009-07-07

    A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

  18. Convergence of valence bands for high thermoelectric performance for p-type InN

    NASA Astrophysics Data System (ADS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  19. Surface acoustic wave hydrogen sensor

    NASA Technical Reports Server (NTRS)

    Bhethanabotla, Venkat R. (Inventor); Bhansali, Shekhar (Inventor)

    2006-01-01

    The present invention provides a delay line SAW device fabricated on a lithium niobate substrate and coated with a bilayer of nanocrystalline or other nanomaterials such as nanoparticles or nanowires of palladiumn and metal free pthalocyanine which will respond to hydrogen gas in near real time, at low (room) temperature, without being affected by CO, O.sub.2, CH.sub.4 and other gases, in air ambient or controlled ambient, providing sensitivity to low ppm levels.

  20. Nanocrystalline cellulose from coir fiber: preparation, properties, and applications

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Nanocrystalline cellulose derived from various botanical sources offers unique and potentially useful characteristics. In principle, any cellulosic material can be considered as a potential source of a nanocrystalline material, including crops, crop residues, and agroindustrial wastes. Because of t...

  1. Molecular dynamics simulation of impurities in nanocrystalline diamond grain boundaries

    SciTech Connect

    Sternberg, M.; Zapol, P.; Frauenheim, T.; Gruen, D. M.; Curtiss, L. A.

    2000-01-12

    Nanocrystalline diamond films grown on Si substrates at 800 C from hydrogen-poor plasmas have a number of highly desirable mechanical and electronic properties. Impurities were found by SIMS measurements to be uniformly distributed throughout the thickness of the films at a level of 10{sup 17}--10{sup 18} cm{sup {minus}3}. It is likely that the impurities are located at the grain boundaries, which play a crucial role in controlling important characteristics of the films, such as electrical conductivity and electron emission. Density-functional based tight-binding (DFTB) molecular dynamics simulations were performed for diamond light-energy high-angle (100) twist grain boundaries with impurities such as N, Si and H.

  2. Nanocrystalline hydroxyapatite prepared under various pH conditions

    NASA Astrophysics Data System (ADS)

    Palanivelu, R.; Mary Saral, A.; Ruban Kumar, A.

    2014-10-01

    Hydroxyapatite (HAP) has sovereign biomedical application due to its excellent biocompatibility, chemical and crystallographic similitude with natural human bone. In this present work, we discussed about the role of pH in the synthesis of calcium phosphate compound using calcium nitrate tetrahydrate and di-ammonium hydrogen phosphate as starting materials by chemical precipitation method assisted with ultrasonic irradiation technique. 5% polyethylene glycol (PEG600) is added along with the precursors under various pH condition of 7, 9 and 11 respectively. The functional group analysis, crystallized size and fraction of crystallized size are confirmed using Fourier Transformation Infra-Red spectroscopy and X-ray diffraction pattern. Morphological observations are done by scanning electron microscope. The results revealed the presence of nanocrystalline hydroxyapatite at pH above 9.

  3. Grain boundaries and mechanical properties of nanocrystalline diamond films.

    SciTech Connect

    Busmann, H.-G.; Pageler, A.; Gruen, D. M.

    1999-08-06

    Phase-pure nanocrystalline diamond thin films grown from plasmas of a hydrogen-poor carbon argon gas mixture have been analyzed regarding their hardness and elastic moduli by means of a microindentor and a scanning acoustic microscope.The films are superhard and the moduli rival single crystal diamond. In addition, Raman spectroscopy with an excitation wavelength of 1064 nm shows a peak at 1438 l/cm and no peak above 1500 l/cm, and X-ray photoelectron spectroscopy a shake-up loss at 4.2 eV. This gives strong evidence for the existence of solitary double bonds in the films. The hardness and elasticity of the films then are explained by the assumption, that the solitary double bonds interconnect the nanocrystals in the films, leading to an intergrain boundary adhesion of similar strength as the intragrain diamond cohesion. The results are in good agreement with recent simulations of high-energy grain boundaries.

  4. Segmentation of the Outer Contact on P-Type Coaxial Germanium Detectors

    SciTech Connect

    Hull, Ethan L.; Pehl, Richard H.; Lathrop, James R.; Martin, Gregory N.; Mashburn, R. B.; Miley, Harry S.; Aalseth, Craig E.; Hossbach, Todd W.

    2006-09-21

    Germanium detector arrays are needed for low-level counting facilities. The practical applications of such user facilities include characterization of low-level radioactive samples. In addition, the same detector arrays can also perform important fundamental physics measurements including the search for rare events like neutrino-less double-beta decay. Coaxial germanium detectors having segmented outer contacts will provide the next level of sensitivity improvement in low background measurements. The segmented outer detector contact allows performance of advanced pulse shape analysis measurements that provide additional background reduction. Currently, n-type (reverse electrode) germanium coaxial detectors are used whenever a segmented coaxial detector is needed because the outer boron (electron barrier) contact is thin and can be segmented. Coaxial detectors fabricated from p-type germanium cost less, have better resolution, and are larger than n-type coaxial detectors. However, it is difficult to reliably segment p-type coaxial detectors because thick (~1 mm) lithium-diffused (hole barrier) contacts are the standard outside contact for p-type coaxial detectors. During this Phase 1 Small Business Innovation Research (SBIR) we have researched the possibility of using amorphous germanium contacts as a thin outer contact of p-type coaxial detectors that can be segmented. We have developed amorphous germanium contacts that provide a very high hole barrier on small planar detectors. These easily segmented amorphous germanium contacts have been demonstrated to withstand several thousand volts/cm electric fields with no measurable leakage current (<1 pA) from charge injection over the hole barrier. We have also demonstrated that the contact can be sputter deposited around and over the curved outside surface of a small p-type coaxial detector. The amorphous contact has shown good rectification properties on the outside of a small p-type coaxial detector. These encouraging

  5. PATBox: A Toolbox for Classification and Analysis of P-Type ATPases

    PubMed Central

    Søndergaard, Dan; Pedersen, Christian Nørgaard Storm

    2015-01-01

    P-Type ATPases are part of the regulatory system of the cell where they are responsible for transporting ions and lipids through the cell membrane. These pumps are found in all eukaryotes and their malfunction has been found to cause several severe diseases. Knowing which substrate is pumped by a certain P-Type ATPase is therefore vital. The P-Type ATPases can be divided into 11 subtypes based on their specificity, that is, the substrate that they pump. Determining the subtype experimentally is time-consuming. Thus it is of great interest to be able to accurately predict the subtype based on the amino acid sequence only. We present an approach to P-Type ATPase sequence classification based on the k-nearest neighbors, similar to a homology search, and show that this method provides performs very well and, to the best of our knowledge, better than any existing method despite its simplicity. The classifier is made available as a web service at http://services.birc.au.dk/patbox/ which also provides access to a database of potential P-Type ATPases and their predicted subtypes. PMID:26422234

  6. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  7. Piezotronic effect in solution-grown p-type ZnO nanowires and films.

    PubMed

    Pradel, Ken C; Wu, Wenzhuo; Zhou, Yusheng; Wen, Xiaonan; Ding, Yong; Wang, Zhong Lin

    2013-06-12

    Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing. PMID:23635319

  8. Simulation and bonding of dopants in nanocrystalline diamond.

    PubMed

    Barnard, A S; Russo, S P; Snook, I K

    2005-09-01

    The doping of the wide-band gap semiconductor diamond has led to the invention of many electronic and optoelectronic devices. Impurities can be introduced into diamond during chemical vapor deposition or high pressure-high temperature growth, resulting in materials with unusual physical and chemical properties. For electronic applications one of the main objectives in the doping of diamond is the production of p-type and n-type semiconductors materials; however, the study of dopants in diamond nanoparticles is considered important for use in nanodevices, or as qubits for quantum computing. Such devices require that bonding of dopants in nanodiamond must be positioned substitutionally at a lattice site, and must exhibit minimal or no possibility of diffusion to the nanocrystallite surface. In light of these requirements, a number of computational studies have been undertaken to examine the stability of various dopants in various forms of nanocrystalline diamond. Presented here is a review of some such studies, undertaken using quantum mechanical based simulation methods, to provide an overview of the crystal stability of doped nanodiamond for use in diamondoid nanodevices. PMID:16193953

  9. Modeling of the Thermoelectric Properties of p-Type IrSb(sub 3)

    NASA Technical Reports Server (NTRS)

    Fleurial, J.

    1994-01-01

    IrSb(sub 3) is a compound of the skutterudite family of materials now being investigated at JPL. A combination of experimental and theoretical approaches has been recently applied at JPL to evaluate the potential of several thermoelectric materials such as n-type and p-type Si(sub 80) Ge(sub 20) alloys, n-type and p-type Bi(sub 2) Te(sub 3)-based alloys and p-type Ru(sub 2) Ge(sub 3) compound. The use of a comprehensive model for the thermal and electrical transport properties of a given material over its full temperature range of usefulness is a powerful tool for guiding experimental optimization of the composition, temperature and doping level as well as for predicting the maximum ZT value likely to be achieved.

  10. Identification and design principles of low hole effective mass p-type transparent conducting oxides

    PubMed Central

    Hautier, Geoffroy; Miglio, Anna; Ceder, Gerbrand; Rignanese, Gian-Marco; Gonze, Xavier

    2013-01-01

    The development of high-performance transparent conducting oxides is critical to many technologies from transparent electronics to solar cells. Whereas n-type transparent conducting oxides are present in many devices, their p-type counterparts are not largely commercialized, as they exhibit much lower carrier mobilities due to the large hole effective masses of most oxides. Here we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state-of-the-art p-type transparent conducting oxides), as well as wide band gaps. In addition to the discovery of specific compounds, the chemical rationalization of our findings opens new directions, beyond current Cu-based chemistries, for the design and development of future p-type transparent conducting oxides. PMID:23939205

  11. Dopant source choice for formation of p-type ZnO: Li acceptor

    NASA Astrophysics Data System (ADS)

    Zeng, Y. J.; Ye, Z. Z.; Xu, W. Z.; Li, D. Y.; Lu, J. G.; Zhu, L. P.; Zhao, B. H.

    2006-02-01

    Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4Ωcm, Hall mobility of 2.65cm2/Vs, and hole concentration of 1.44×1017cm-3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer.

  12. Realization of p-type ZnO films via monodoping of Li acceptor

    NASA Astrophysics Data System (ADS)

    Zeng, Yu-Jia; Ye, Zhi-Zhen; Xu, Wei-Zhong; Chen, Lan-Lan; Li, Dan-Ying; Zhu, Li-Ping; Zhao, Bing-Hui; Hu, Ying-Lin

    2005-09-01

    p-Type ZnO thin films have been realized via monodoping of Li acceptor by adopting DC reactive magnetron sputtering. The lowest room-temperature resistivity was found to be 17.6 Ω cm with a Hall mobility of 3.47 cm2 V-1 s-1 and carrier concentration of 1.01×1017 cm-3 for Li-doped p-type ZnO film deposited on glass substrate. The Li-doped ZnO film possessed a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. Moreover, the effects of Li content on the crystallinity, electrical and optical properties of p-type ZnO films were discussed.

  13. High performance P-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2002-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  14. Stacking fault and twinning in nanocrystalline metals.

    SciTech Connect

    Liao, Xiaozhou; Zhao, Y.; Srivilliputhur, S. G.; Zhou, F.; Lavernia, E. J.; Baskes, M. I.; Zhu, Y. T.; Xu, H. F.

    2004-01-01

    Nanocrystalline Al processed by cryogenic ball-milling and nanocrystalline Cu processed by high-pressure torsion at a very low strain rate and at room temperature were investigated using high-resolution transmission electron microscopy. For nanocrystalline Al, we observed partial dislocation emission from grain boundaries, which consequently resulted in deformation stacking faults and twinning. We also observed deformation twins formed via two other mechanisms recently predicted by molecular dynamic simulations. These results are surprising because (1) partial dislocation emission from grain boundaries has not been experimentally observed although it has been predicted by simulations and (2) deformation stacking faults and twinning have not been reported in Al due to its high stacking fault energy. For nanocrystalline Cu, we found that twinning becomes a major deformation mechanism, which contrasts with the literature reports that deformation twinning in coarse-grained Cu occurs only under high strain rate and/or low temperature conditions and that reducing grain sizes suppresses deformation twinning. The investigation of the twinning morphology suggests that twins and stacking faults in nanocrystalline Cu were formed through partial dislocation emissions from grain boundaries. This mechanism differs from the pole mechanism operating in coarse-grained Cu.

  15. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  16. Electrical and optical properties of p-type InN

    SciTech Connect

    Mayer, Marie A.; Choi, Soojeong; Bierwagen, Oliver; Smith, Holland M.; Haller, Eugene E.; Speck, James S.; Walukiewicz, Wladek

    2011-01-01

    We have performed comprehensive studies of optical, thermoelectric and electrical properties of Mg doped InN with varying Mg doping levels and sample thicknesses. Room temperature photoluminescence spectra show a Mg acceptor related emission and the thermopower provides clear evidence for the presence of mobile holes. Although the effects of the hole transport are clearly observed in the temperature dependent electrical properties, the sign of the apparent Hall coefficient remains negative in all samples. We show that the standard model of two electrically well connected layers (n-type surface electron accumulation and p-type bulk) does not properly describe Hall effect in p-type InN.

  17. Tunable electronic structures of p-type Mg doping in AlN nanosheet

    SciTech Connect

    Peng, Yuting; Xia, Congxin Zhang, Heng; Wang, Tianxing; Wei, Shuyi; Jia, Yu

    2014-07-28

    The p-type impurity properties are investigated in the Mg-doped AlN nanosheet by means of first-principles calculations. Numerical results show that the transition energy levels reduce monotonously with the increase in Mg doping concentration in the Mg-doped AlN nanosheet systems, and are lower than that of the Mg-doped bulk AlN case for the cases with larger doping concentration. Moreover, Mg substituting Al atom is energy favorably under N-rich growth experimental conditions. These results are new and interesting to further improve p-type doping efficiency in the AlN nanostructures.

  18. Rapid phase synthesis of nanocrystalline cobalt ferrite

    SciTech Connect

    Shanmugavel, T.; Raj, S. Gokul; Rajarajan, G.; Kumar, G. Ramesh

    2014-04-24

    Synthesis of single phase nanocrystalline Cobalt Ferrite (CoFe{sub 2}O{sub 4}) was achieved by single step autocombustion technique with the use of citric acid as a chelating agent in mono proportion with metal. Specimens prepared with this method showed significantly higher initial permeability's than with the conventional process. Single phase nanocrystalline cobalt ferrites were formed at very low temperature. Surface morphology identification were carried out by transmission electron microscopy (TEM) analysis. The average grain size and density at low temperature increased gradually with increasing the temperature. The single phase formation is confirmed through powder X-ray diffraction analysis. Magnetization measurements were obtained at room temperature by using a vibrating sample magnetometer (VSM), which showed that the calcined samples exhibited typical magnetic behaviors. Temperature dependent magnetization results showed improved behavior for the nanocrystalline form of cobalt ferrite when compared to the bulk nature of materials synthesized by other methods.

  19. Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode

    NASA Astrophysics Data System (ADS)

    Jin, Xiuguang; Cotta, Alexandre A. C.; Chen, Gong; N`Diaye, Alpha T.; Schmid, Andreas K.; Yamamoto, Naoto

    2014-11-01

    Work function, photoemission yield, and Auger electron spectra were measured on (001) p-type GaAs during negative electron affinity (NEA) surface preparation, surface degradation, and heating processes. The emission current sensitively depends on work function change and its dependence allows us to determine that the shape of the vacuum barrier was close to double triangular. Regarding the NEA surface degradation during photoemission, we discuss the importance of residual gas components the oxygen and hydrogen. We also found that gentle annealing (≤100 °C) of aged photocathodes results in a lower work function and may offer a patch to reverse the performance degradation.

  20. p -type Bi2Se3 for topological insulator and low-temperature thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Hor, Y. S.; Richardella, A.; Roushan, P.; Xia, Y.; Checkelsky, J. G.; Yazdani, A.; Hasan, M. Z.; Ong, N. P.; Cava, R. J.

    2009-05-01

    The growth and elementary properties of p -type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3 , the p -type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n -type material. p -type single crystals with ab -plane Seebeck coefficients of +180μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120μVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p -type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

  1. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  2. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  3. Origin and evolution of metal P-type ATPases in Plantae (Archaeplastida)

    PubMed Central

    Hanikenne, Marc; Baurain, Denis

    2013-01-01

    Metal ATPases are a subfamily of P-type ATPases involved in the transport of metal cations across biological membranes. They all share an architecture featuring eight transmembrane domains in pairs of two and are found in prokaryotes as well as in a variety of Eukaryotes. In Arabidopsis thaliana, eight metal P-type ATPases have been described, four being specific to copper transport and four displaying a broader metal specificity, including zinc, cadmium, and possibly copper and calcium. So far, few efforts have been devoted to elucidating the origin and evolution of these proteins in Eukaryotes. In this work, we use large-scale phylogenetics to show that metal P-type ATPases form a homogenous group among P-type ATPases and that their specialization into either monovalent (Cu) or divalent (Zn, Cd…) metal transport stems from a gene duplication that took place early in the evolution of Life. Then, we demonstrate that the four subgroups of plant metal ATPases all have a different evolutionary origin and a specific taxonomic distribution, only one tracing back to the cyanobacterial progenitor of the chloroplast. Finally, we examine the subsequent evolution of these proteins in green plants and conclude that the genes thoroughly characterized in model organisms are often the result of lineage-specific gene duplications, which calls for caution when attempting to infer function from sequence similarity alone in non-model organisms. PMID:24575101

  4. A structural and functional perspective of DyP-type peroxidase family.

    PubMed

    Yoshida, Toru; Sugano, Yasushi

    2015-05-15

    Dye-decolorizing peroxidase from the basidiomycete Bjerkandera adusta Dec 1 (DyP) is a heme peroxidase. This name reflects its ability to degrade several anthraquinone dyes. The substrate specificity, the amino acid sequence, and the tertiary structure of DyP are different from those of the other heme peroxidase (super)families. Therefore, many proteins showing the similar amino acid sequences to that of DyP are called DyP-type peroxidase which is a new family of heme peroxidase identified in 2007. In fact, all structures of this family show a similar structure fold. However, this family includes many proteins whose amino acid sequence identity to DyP is lower than 15% and/or whose catalytic efficiency (kcat/Km) is a few orders of magnitude less than that of DyP. A protein showing an activity different from peroxidase activity (dechelatase activity) has been also reported. In addition, the precise physiological roles of DyP-type peroxidases are unknown. These facts raise a question of whether calling this family DyP-type peroxidase is suitable. Here, we review the differences and similarities of structure and function among this family and propose the reasonable new classification of DyP-type peroxidase family, that is, class P, I and V. In this contribution, we discuss the adequacy of this family name. PMID:25655348

  5. p+‑n‑‑n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

    NASA Astrophysics Data System (ADS)

    Wensheng, Wei; Chunxi, Zhang

    2016-06-01

    Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+‑n‑‑n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n‑-type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance–voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n‑)Si/(p+)nc-Si and (n‑)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one. Project supported by the National Natural Science Foundation of China (No. 61274006).

  6. Direct Coating of Nanocrystalline Diamond on Steel

    NASA Astrophysics Data System (ADS)

    Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

    2012-09-01

    Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

  7. Synthesis of nanocrystalline tungsten carbide (WC) powder

    NASA Astrophysics Data System (ADS)

    Singla, Gourav; Singh, K.; Pandey, O. P.

    2013-06-01

    Nanocrystalline tungsten carbide (WC) has been obtained from bulk WO3 by in situ reduction and carbonization reactions at low temperature (˜ 600 °C) by taking Mg as reductant and acetone C3H6O as carbon source. It was aimed to elucidate carburization behavior of WO3 powder and to establish optimal conditions for the synthesis of nanocrystalline WC. The role of reaction time on the synthesis of WC has been investigated and discussed. The synthesized powders were characterized by X-ray powder diffraction, differential thermal analyzer (DTA), thermo gravimetric analysis (TGA).

  8. P-type Oxides and the Growth of Heterostructure Oxide Devices

    NASA Astrophysics Data System (ADS)

    Hosono, Hideo

    2002-03-01

    Transparent conductive oxides (TCOs) are widely used as transparent metallic electrodes for various displays and solar cells. However, even though TCO is an n-type semiconductor, there is almost no application based on the active function as a compound semiconductor. The primary reason is because most active functions in semiconductors come from the characteristic properties of p-n junction but TCOs do not have a p-type. We anticipate that new frontier of transparent oxide semiconductors (TOSs) utilizing both optical transparency and electron activity in semiconductors will be opened if a p-type TCO is realized. In 1997, we reported on CuAlO2 (thin films) as the first p-type TCO along with a chemical design concept to explore the candidate materials. After that, a series of p-type TCOs based on a Cu+ -based system have been reported following the design concept, i.e., CuGaO2, CuInO2, and SrCu2O2. In 1999, a transparent p-n heterojunction diode exhibiting a rectifying I-V characteristic was fabricated using a combination of p-SrCu2O2 (SCO) and n-ZnO. Ultraviolet-emitting diode (UV-LED) is a typical active device, which can use the features of TOSs. Thus, since the initiation of our project (October, 1999), we concentrated our effort on the fabrication of UV-LED based on transparent p-n junction composed of TOSs. The fabrication was realized(APL,77,475,2000) by the formation of p-n heterojunction composed of heteroepitaxially grown p-SCO and n-ZnO. In this talk I will review our approach to P-type TCOs and UV-LED based on PN heterojuction utilizing TCOs along with recent advances.

  9. The p-type conduction mechanism in Cu2O: a first principles study.

    PubMed

    Nolan, Michael; Elliott, Simon D

    2006-12-01

    Materials based on Cu2O are potential p-type transparent semiconducting oxides. Developing an understanding of the mechanism leading to p-type behaviour is important. An accepted origin is the formation of Cu vacancies. However, the way in which this mechanism leads to p-type properties needs to be investigated. This paper presents a first principles analysis of the origin of p-type semiconducting behaviour in Cu2O with 1.5 and 3% Cu vacancy concentrations. Plane wave density functional theory (DFT) with the Perdew-Burke Ernzerhof (PBE) exchange-correlation functional is applied. In order to investigate the applicability of DFT, we firstly show that CuO, with 50% Cu vacancies cannot be described with DFT and in order to obtain a consistent description of CuO, the DFT + U approach is applied. The resulting electronic structure is consistent with experiment, with a spin moment of 0.64 mu(B) and an indirect band gap of 1.48 eV for U = 7 eV. However, for a 3% Cu vacancy concentration in Cu2O, the DFT and DFT + U descriptions of Cu vacancies are similar, indicating that DFT is suitable for a small concentration of Cu vacancies; the formation energy of a Cu vacancy is no larger than 1.7 eV. Formation of Cu vacancies produces delocalised hole states with hole effective masses consistent with the semiconducting nature of Cu2O. These results demonstrate that the p-type semiconducting properties observed for Cu2O are explained by a small concentration of Cu vacancies. PMID:19810413

  10. Deformation of nanocrystalline materials at ultrahigh strain rates - microstructure perspective in nanocrystalline nickel

    SciTech Connect

    Wang, Y; Bringa, E; Victoria, M; Caro, A; McNaney, J; Smith, R; Remington, B

    2006-04-10

    Nanocrystalline materials with grain sizes smaller than 100 nm have attracted extensive research in the past decade. Due to their high strength, these materials are good candidates for high pressure shock loading experiments. In this paper, we investigated the microstructural evolutions of nanocrystalline nickel with grain sizes of 10-50 nm, shock-loaded in a range of pressures (20-70 GPa). A laser-driven isentropic compression process was applied to achieve high shock-pressures in a timescale of nanoseconds and thus the high-strain-rate deformation of nanocrystalline nickel. Postmortem transmission electron microscopy (TEM) examinations reveal that the nanocrystalline structures survive the shock deformation and that dislocation activity is the prevalent deformation mechanism when the grain sizes are larger than 30 nm, without any twinning activity at twice the stress threshold for twin formation in micrometer-sized polycrystals. However, deformation twinning becomes an important deformation mode for 10-20 nm grain-sized samples.

  11. Tailoring nanocrystalline diamond film properties

    DOEpatents

    Gruen, Dieter M.; McCauley, Thomas G.; Zhou, Dan; Krauss, Alan R.

    2003-07-15

    A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

  12. Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinning

    SciTech Connect

    Bocarsly, A.B.; Bookbinder, D.C.; Dominey, R.N.; Lewis, N.S.; Wrighton, M.S.

    1980-05-21

    Studies of p- and n-type Si electrodes are reported which show that semiconducting Si electrode surfaces do not allow efficient H/sub 2/ evolution in the dark (n type) or upon illumination with band gap or greater energy light (p type). The key experiment is that N,N'-dimethyl-4,4'-bipyridinium (PQ/sup 2 +/) is reversibly reduced at n-type Si in aqueous media at a pH where H/sub 2/ should be evolved at nearly the same potential, but no H/sub 2/ evolution current is observable. The PQ/sup 2+/+/.system may be useful as an electron-transfer mediator, since PQ/sup +/.can be used to effect generation of H/sub 2/ from H/sub 2/O using a heterogeneous catalyst. The PQ/sup +/.can be produced in an uphill sense by illumination of p-type Si in aqueous solutions. Studies of p-type Si in nonaqueous solvents show that PQ/sup 2 +/, PQ/sup +/., Ru(bpy)/sub 3//sup 2 +/, Ru(bpy)/sub 3//sup +/, and Ru(bpy)/sub 3//sup 0/ are all reducible upon illumination of the p-type Si. Interestingly, each species can be photoreduced at a potential approx. 500 mV more positive than at a reversible electrode in the dark. This result reveals that a p-type Si-based photoelectrochemical cell based on PQ/sup 2+/+/., PQ/sup +/l/sup 0//, Ru(bpy)/sub 3//sup 2+/+/, Ru(bpy)/sub 3//sup +/0/, or Ru(bpy)/sub 3//sup 0/-/ would all yield a common output photovoltage, despite the fact that the formal potentials for these couples vary by more than the band gap (1.1 V) of the photocathode. These data support the notion that p-type Si exhibits Fermi level pinning under the conditions employed.Surface chemistry is shown to be able to effect changes in interface kinetics for electrodes exhibiting Fermi level pinning.

  13. Facile preparation of nanocrystalline gallium antimonide

    SciTech Connect

    Baldwin, R.A.; Foos, E.E.; Wells, R.L.

    1997-02-01

    The 1:1 reaction of GaCl3 with Sb(SiMe{sub 3}){sub 3} in pentane solution affords an intermediate material which, upon thermolysis, yields nanocrystalline GaSb with an approximate average particle size of 12 nm. The product was characterized through powder X-ray diffraction, elemental analysis, and HRTEM.

  14. Nanocrystalline diamond films: new material for IR optics

    NASA Astrophysics Data System (ADS)

    Konov, Vitali I.; Obraztsova, E. D.; Pimenov, Sergej M.; Ralchenko, Victor G.; Smolin, Andrey A.; Khomich, A. V.; Polyakov, Vladimir I.; Rukovishnikov, A. I.; Perov, Polievet I.; Loubnin, E. N.

    1995-07-01

    Thin nanocrystalline diamond films promising for IR optical applications were grown on Si substrates from methane-hydrogen gas mixture in a DC arc plasma CVD reactor. Three stages for the synthesis of the highly smooth noncrystalline diamond films are important: (i) substrate pretreatment with ultrafine diamond powder, (ii) excimer laser irradiation of seeded substrates, and (iii) two-step deposition process. A correlation between optical properties of the films and growth conditions has been established by means of Raman spectroscopy, spectroscopic ellipsometry and optical transmission spectroscopy techniques. Surface roughness, which was Ra equals 8 - 40 nm for the 1 micrometers thick films, significantly decreased the transmission in the visible because of light scattering, but it had a negligible effect in the IR range. The films are transparent in the IR and have optical constants n equals 2.34-2.36 and k equals 0.005- 0.03. The hydrogen incorporation in the films in amounts up to 1.5% have been deduced from intensity of C-H absorption band around 2900 cm(superscript -1.

  15. Synthesis and characterization of a photosensitive interface for hydrogen generation: Chemically modified p-type semiconducting silicon photocathodes

    PubMed Central

    Bookbinder, Dana C.; Bruce, James A.; Dominey, Raymond N.; Lewis, Nathan S.; Wrighton, Mark S.

    1980-01-01

    p-Si photocathodes functionalized first with an N,N′-dialkyl-4,4′-bipyridinium redox reagent, (PQ2+/+-)surf, and then with a Pt precursor, PtCl62-, give significant efficiency (up to 5%) for photoelectrochemical H2 generation with 632.8-nm light. Naked p-Si photocathodes give nearly zero efficiency, owing to poor H2 evolution kinetics that are improved by the (PQ2+/+-)surf/Pt modification. The mechanism of H2 evolution from p-Si/(PQ2+/+-)surf/Pt is first photoexcitation of electrons to the conduction band of Si followed by (PQ2+)surf → (PQ+-)surf reduction. The dispersion of Pt then catalyzes H2O reduction to give H2 and regeneration of (PQ2+)surf. The overall energy conversion efficiency rivals the best direct optical to chemical conversion systems reported to date. PMID:16592907

  16. Synthesis and characterization of a photosensitive interface for hydrogen generation: chemically modified p-type semiconducting silicon photocathodes

    SciTech Connect

    Bookbinder, D.C.; Bruce, J.A.; Dominey, R.N.; Lewis, N.S.; Wrighton, M.S.

    1980-11-01

    p-Si photocathodes functionalized first with an N,N'-dialkyl-4,4'-bipyridinium redox reagent, (PQ/sup 2+/+./)/sub surf/, and then with a Pt precursor, PtCl/sub 6//sup 2 -/, give significant efficiency (up to 5%) for photoelectrochemical H/sub 2/ generation with 632.8-nm light. Naked p-Si photocathodes give nearly zero efficiency, owing to poor H/sub 2/ evolution kinetics that are improved by the (PQ/sup 2+/+.//sub surf)/Pt modification. The mechanism of H/sub 2/ evolution from p-Si/(PQ/sup 2+/+./)/sub surf/Pt is first photoexcitation of electrons to the conduction band of Si followed by (PQ/sup 2 +/)/sub surf/ ..-->.. (PQ/sup +.//sub surf/ reduction. The dispersion of Pt then catalyzes H/sub 2/O reduction to give H/sub 2/ and regeneration of (PQ/sup 2/)/sub surf/. The overall energy conversion efficiency rivals the best direct optical to chemical conversion systems reported to date.

  17. Direct observation of proton pumping by a eukaryotic P-type ATPase.

    PubMed

    Veshaguri, Salome; Christensen, Sune M; Kemmer, Gerdi C; Ghale, Garima; Møller, Mads P; Lohr, Christina; Christensen, Andreas L; Justesen, Bo H; Jørgensen, Ida L; Schiller, Jürgen; Hatzakis, Nikos S; Grabe, Michael; Pomorski, Thomas Günther; Stamou, Dimitrios

    2016-03-25

    In eukaryotes, P-type adenosine triphosphatases (ATPases) generate the plasma membrane potential and drive secondary transport systems; however, despite their importance, their regulation remains poorly understood. We monitored at the single-molecule level the activity of the prototypic proton-pumping P-type ATPase Arabidopsis thaliana isoform 2 (AHA2). Our measurements, combined with a physical nonequilibrium model of vesicle acidification, revealed that pumping is stochastically interrupted by long-lived (~100 seconds) inactive or leaky states. Allosteric regulation by pH gradients modulated the switch between these states but not the pumping or leakage rates. The autoinhibitory regulatory domain of AHA2 reduced the intrinsic pumping rates but increased the dwell time in the active pumping state. We anticipate that similar functional dynamics underlie the operation and regulation of many other active transporters. PMID:27013734

  18. Temperature driven p-n-p type conduction switching materials: current trends and future directions.

    PubMed

    Guin, Satya N; Biswas, Kanishka

    2015-04-28

    Modern technological inventions have been going through a "renaissance" period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field. PMID:25812630

  19. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G.

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  20. Absence of positronium formation in clean buried nanocavities in p-type silicon

    SciTech Connect

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Egger, W.; Sperr, P.; Koegel, G.

    2005-06-15

    Buried nanocavities at about 350 nm depth in Si were produced by thermal treatment of He implanted p-type (100) Si. The internal surfaces of the nanocavities were found free of impurity decorations by examining the high-momentum part of the Doppler-broadened positron annihilation spectra. Positron lifetime measurements with a pulsed slow positron beam show neither a short lifetime (125-150 ps) ascribable to parapositronium nor a longer lifetime (2-4 ns) ascribable to pick-off annihilation of orthopositronium. The lifetime of positrons trapped into nanocavities was found to be about 500 ps. The absence of positronium formation could be explained by an insufficient electron density and a lack of electron states in the band gap at the nanocavities internal surfaces produced in the p-type silicon.

  1. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOEpatents

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2014-06-24

    A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

  2. High-temperature elastic moduli of bulk nanostructured n - and p -type silicon germanium

    NASA Astrophysics Data System (ADS)

    Gladden, J. R.; Li, G.; Adebisi, R.; Firdosy, S.; Caillat, T.; Ravi, V.

    2010-07-01

    Resonant ultrasound spectroscopy (RUS) has been used to measure the elastic moduli of n - and p -type doped polycrystalline bulk nanostructured silicon germanium alloys at elevated temperatures. A direct contact RUS transducer system with a working temperature range up to 900 K was successfully constructed for these measurements. For higher temperatures (up to 1300 K), we employed a traditional buffer rod RUS system. Experimental results show the Young’s and shear moduli of p -type SiGe alloys monotonically decrease with increasing temperatures in the 300-1200 K range. The n -type samples show a marked stiffening beginning at 675 K which does not repeat upon cooling or subsequent reheating. We attribute the stiffening of the n -type samples to the thermally activated precipitation of the phosphorous dopant. Electrical resistivity and Seebeck coefficient data are also presented for both types of SiGe which support this conclusion.

  3. Mycobacterium tuberculosis P-Type ATPases: Possible Targets for Drug or Vaccine Development

    PubMed Central

    2014-01-01

    Tuberculosis (TB) has been the biggest killer in the human history; currently, Mycobacterium tuberculosis (Mtb) kills nearly 2 million people each year worldwide. The high prevalence of TB obligates the identification of new therapeutic targets and the development of anti-TB vaccines that can control multidrug resistance and latent TB infections. Membrane proteins have recently been suggested as key targets for bacterial viability. Current studies have shown that mycobacteria P-type ATPases may play critical roles in ion homeostasis and in the response of mycobacteria to toxic substances in the intraphagosomal environment. In this review, we bring together the genomic, transcriptomic, and structural aspects of the P-type ATPases that are relevant during active and latent Mtb infections, which can be useful in determining the potential of these ATPases as drug targets and in uncovering their possible roles in the development of new anti-TB attenuated vaccines. PMID:25110669

  4. High temperature terahertz response in a p-type quantum dot-in-well photodetector

    SciTech Connect

    Wolde, Seyoum; Lao, Yan-Feng; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S.

    2014-10-13

    Terahertz (THz) response observed in a p-type InAs/In{sub 0.15}Ga{sub 0.85}As/GaAs quantum dots-in-a-well (DWELL) photodetector is reported. This detector displays expected mid-infrared response (from ∼3 to ∼10 μm) at temperatures below ∼100 K, while strong THz responses up to ∼4.28 THz is observed at higher temperatures (∼100–130 K). Responsivity and specific detectivity at 9.2 THz (32.6 μm) under applied bias of −0.4 V at 130 K are ∼0.3 mA/W and ∼1.4 × 10{sup 6} Jones, respectively. Our results demonstrate the potential use of p-type DWELL in developing high operating temperature THz devices.

  5. Detection of minority carrier traps in p-type 4H-SiC

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2014-03-03

    Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)

  6. p-type conduction in Zn-ion implanted InN films

    NASA Astrophysics Data System (ADS)

    Xie, W. M.; Y Xie, Q.; Zhu, H. P.; Wang, W.; Cai, H. L.; Zhang, F. M.; Wu, X. S.

    2015-06-01

    We report p-type conductivity in wurtzite indium nitride (InN) experimentally and theoretically. The as-deposited InN films are implanted with various doses of Zn ions. The Hall coefficient is positive for samples with doses of 2.5 ~ 10   ×   1014 ions cm-2 at low temperature and turns negative as the temperature increases. This notable sign change of the Hall coefficient confirms the existence of mobile holes in Zn-implanted InN. Moreover, first principle calculations indicate that Zn may be a more stable p-type dopant in InN than that of Mg and Ba because of its low ionization energy.

  7. CALCULATING THE HABITABLE ZONE OF BINARY STAR SYSTEMS. II. P-TYPE BINARIES

    SciTech Connect

    Haghighipour, Nader; Kaltenegger, Lisa

    2013-11-10

    We have developed a comprehensive methodology for calculating the circumbinary habitable zone (HZ) in planet-hosting P-type binary star systems. We present a general formalism for determining the contribution of each star of the binary to the total flux received at the top of the atmosphere of an Earth-like planet and use the Sun's HZ to calculate the inner and outer boundaries of the HZ around a binary star system. We apply our calculations to the Kepler's currently known circumbinary planetary systems and show the combined stellar flux that determines the boundaries of their HZs. We also show that the HZ in P-type systems is dynamic and, depending on the luminosity of the binary stars, their spectral types, and the binary eccentricity, its boundaries vary as the stars of the binary undergo their orbital motion. We present the details of our calculations and discuss the implications of the results.

  8. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    NASA Astrophysics Data System (ADS)

    Goyal, Prabal; Hong, Junegie; Haddad, Farah; Maurice, Jean-Luc; Cabarrocas, Pere Roca i.; Johnson, Erik

    2016-01-01

    The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm) and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  9. Photoinduced p-Type Conductivity in n-Type ZnO

    NASA Astrophysics Data System (ADS)

    Zhao, W. X.; Sun, B.; Shen, Z.; Liu, Y. H.; Chen, P.

    2015-03-01

    Ag/[BaTiO3/γ-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance-voltage ( C- V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current-voltage ( I- V) curves of the [BaTiO3/γ-Fe2O3]/ZnO thin films display a strong photoconductivity effect.

  10. Synthesis and characterization of nanocrystalline silicide compounds

    SciTech Connect

    Karen, B.

    1992-01-03

    This thesis involves the investigation into the production of nanocrystalline silicide compounds by radio frequency inductively coupled plasma (RF-ICP) and mechanical milling. A system constructed which utilized a RF-ICP, a powder feed system and a condensation / collection chamber to produce nanocrystalline materials. Several silicides, such as Ti{sub 5}Si{sub 3}, Cr{sub 3}Si and MoSi{sub 2}, were fed into the plasma were they vaporized. The vaporized material then passed into a connecting chamber, where it condensed out of the vapor phase and the resulting powder was collected. Much of the work conducted was in designing and building of the systems components. This was followed by establishing the plasmas operating parameters. The material collected from the ICP chamber was then compared to material produced by mechanical milling. The material produced by both methods were characterized by x-ray diffraction, scanning and transmission-electron microscopy, and energy dispersive spectroscopy. The results indicate that it is possible to produce nanocrystalline material by mechanical milling; however, there is a significant amount of contamination from the milling ball and milling container. The results also show that the Ti{sub 5}Si{sub 3} and Cr{sub 3}Si compounds can be produced in nanocrystalline form by the ICP method. The resultant material collected from the ICP chamber following the MoSi{sub 2} run consisted of nanocrystalline Si and crystalline, Mo rich Si compound. Inductively coupled plasma - atomic emission spectroscopy (ICP-AES) was also used to observe the powders as they passed through the plasma. The resulting data indicates that each compound was vaporized and dissociated in the plasma. The following thesis describes the apparatus and experimental procedure used in producing nanocrystals.

  11. Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Shyju, T. S.; Anandhi, S.; Sivakumar, R.; Garg, S. K.; Gopalakrishnan, R.

    2012-08-01

    In this paper, we report the substrate temperature induced changes in physical properties of thermal evaporated lead selenide (PbSe) thin films from the chemically synthesized nanocrystalline PbSe powders. As the first step, nanocrystalline lead selenide was synthesized by simple chemical method at 80 °C using lead nitrate [Pb(NO3)2] and sodium selenosulphate [Na2SeSO3] in the aqueous alkaline media. Ethylene Diamine Tetra acetic acid (0.1 M) was used as a complexing agent to form stable complexes with metal ions. Later on, the lead selenide thin films were deposited on the degreased glass substrates under a vacuum of 10-5 Torr at various substrate temperatures by thermal evaporation technique using the pre-synthesized nanocrystalline PbSe powders. X-ray diffraction results show the synthesized powders and the deposited PbSe films belong to cubic structure. A gradual reduction in optical bandgap of films was observed with increasing substrate temperatures, which revealed the crystallization of the films. These observations are corroborated by photoluminescence spectroscopy study. Changes in surface morphology of the films with respect to substrate temperature were studied by high resolution scanning electron microscopy and atomic force microscopy. Electrical study infers the deposited films are of p-type semiconducting nature.

  12. Development of Nano-crystalline Doped-Ceramic Enabled Fiber Sensors for High Temperature In-Situ Monitoring of Fossil Fuel Gases

    SciTech Connect

    Xiao, Hai; Dong, Junhang; Lin, Jerry; Romero, Van

    2012-03-01

    This is a final technical report for the first project year from July 1, 2005 to Jan 31, 2012 for DoE/NETL funded project DE-FC26-05NT42439: Development of Nanocrystalline Doped-Ceramic Enabled Fiber Sensors for High Temperature In-Situ Monitoring of Fossil Fuel Gases. This report summarizes the technical progresses and achievements towards the development of novel nanocrystalline doped ceramic material-enabled optical fiber sensors for in situ and real time monitoring the gas composition of flue or hot gas streams involved in fossil-fuel based power generation and hydrogen production.

  13. P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

    PubMed

    Liu, Xiaochi; Qu, Deshun; Ryu, Jungjin; Ahmed, Faisal; Yang, Zheng; Lee, Daeyeong; Yoo, Won Jong

    2016-03-01

    A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications. PMID:26808483

  14. Efficient p-type dye-sensitized solar cells based on disulfide/thiolate electrolytes

    NASA Astrophysics Data System (ADS)

    Xu, Xiaobao; Zhang, Bingyan; Cui, Jin; Xiong, Dehua; Shen, Yan; Chen, Wei; Sun, Licheng; Cheng, Yibing; Wang, Mingkui

    2013-08-01

    Herein, an organic redox couple 1-methy-1H-tetrazole-5-thiolate (T-) and its disulfide dimer (T2) redox shuttle, as an electrolyte, is introduced in a p-type dye-sensitized solar cell (DSC) on the basis of an organic dye (P1) sensitizer and nanocrystal CuCrO2 electrode. Using this iodide-free transparent redox electrolyte in conjunction with the sensitized heterojunction, we achieve a high open-circuit voltage of over 300 mV. An optimal efficiency of 0.23% is obtained using a CoS counter electrode and an optimized electrolyte composition under AM 1.5 G 100 mW cm-2 light illumination which, to the best of our knowledge, represents the highest efficiency that has so far been reported for p-type DSCs using organic redox couples.Herein, an organic redox couple 1-methy-1H-tetrazole-5-thiolate (T-) and its disulfide dimer (T2) redox shuttle, as an electrolyte, is introduced in a p-type dye-sensitized solar cell (DSC) on the basis of an organic dye (P1) sensitizer and nanocrystal CuCrO2 electrode. Using this iodide-free transparent redox electrolyte in conjunction with the sensitized heterojunction, we achieve a high open-circuit voltage of over 300 mV. An optimal efficiency of 0.23% is obtained using a CoS counter electrode and an optimized electrolyte composition under AM 1.5 G 100 mW cm-2 light illumination which, to the best of our knowledge, represents the highest efficiency that has so far been reported for p-type DSCs using organic redox couples. Electronic supplementary information (ESI) available: Optimization of electrolyte concentration and the solvent used in the experiment, and the effects of different redox couples and the counter electrode on the dark current. See DOI: 10.1039/c3nr02169f

  15. Interfacial energy level bending in a crystalline p/p-type organic heterostructure

    SciTech Connect

    Zhu Feng; Grobosch, Mandy; Treske, Uwe; Knupfer, Martin; Huang Lizhen; Ji Shiliang; Yan Donghang

    2011-05-16

    A conduction channel was observed at the heterointerface of the crystalline p-type organic films copper phthalocyanine (CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T). Energy level bending at the interface is confirmed by photoemission spectroscopy, which verifies a charge transfer between CuPc and BP2T. This provides a further route to utilize interfacial electronic properties in functional devices and also documents the importance of reconsidering the interfacial electronic structure of organic heterostructures.

  16. Low-temperature solution-processed p-type vanadium oxide for perovskite solar cells.

    PubMed

    Sun, Haocheng; Hou, Xiaomeng; Wei, Qiulong; Liu, Huawei; Yang, Kecheng; Wang, Wei; An, Qinyou; Rong, Yaoguang

    2016-06-21

    A low-temperature solution-processed inorganic p-type contact material of vanadium oxide (VOx) was developed to fabricate planar-heterojunction perovskite solar cells. Using a solvent-assisted process, high-quality uniform and compact perovskite (CH3NH3PbI3) films were deposited on VOx coated substrates. Due to the high transmittance and quenching efficiency of VOx layers, a power conversion efficiency of over 14% was achieved. PMID:27263631

  17. Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.

    PubMed

    Tang, Yong-Bing; Bo, Xiang-Hui; Xu, Jun; Cao, Yu-Lin; Chen, Zhen-Hua; Song, Hai-Sheng; Liu, Chao-Ping; Hung, Tak-Fu; Zhang, Wen-Jun; Cheng, Hui-Ming; Bello, Igor; Lee, Shuit-Tong; Lee, Chun-Sing

    2011-05-24

    Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity in the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) × 10(-6) Ω(-1) cm(-1) for the undoped sample to 15.6-24.4 Ω(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 × 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (∼6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (∼1.0 cm(2)/V s). (2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors. PMID:21480640

  18. Method for producing high carrier concentration p-Type transparent conducting oxides

    DOEpatents

    Li, Xiaonan; Yan, Yanfa; Coutts, Timothy J.; Gessert, Timothy A.; Dehart, Clay M.

    2009-04-14

    A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

  19. P-type Semiconducting Behavior of BaSn1-xRuxO3 system

    NASA Astrophysics Data System (ADS)

    Kwon, Hyukwoo; Shin, Juyeon; Char, Kookrin

    2015-03-01

    BaSnO3 is a promising transparent perovskite oxide semiconductor due to its high mobility and chemical stability. Exploiting such properties, we have applied BaSnO3 to the field effect, the 2-dimensional electron gas, and the pn-junction devices. In spite of the success of the K-doped BaSnO3 as a p-type doped, its carrier density at room temperature is rather small due to its high activation energy of about 0.5 eV. In continuation of our previous study on SrSn1-xRuxO3 system, we studied the p-type semiconducting behavior of BaSn1-xRuxO3 system. We have epitaxially grown the BaSn1-xRuxO3 (0 <=x <=0.12) thin films by pulsed laser deposition. X-ray diffraction measurements show that the films maintain a single phase over the entire doping range and the lattice constants of the system decrease monotonously as the doping increases. Transport measurements show that the films are semiconducting and their resistivities dramatically decrease as the Ru doping increases. Hall measurement data show that the charge carriers are p-type and its corresponding mobility values vary from 0.3 ~ 0.04 cm2/V .s, depending on the doping rate. The hole carrier densities, measured to be 1017 ~ 1019 /cm3, are larger than those of K-doped BaSnO3. Using BaSn1-xRuxO3 and Ba1-xLaxSnO3 as p-type and n-type semiconductors, we will fabricate pn-junctions and report its performance.

  20. p-type semiconducting Cu2O-CoO thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Suzuki, Shingo; Miyata, Toshihiro; Minami, Tadatsugu

    2003-07-01

    The preparation by magnetron sputtering of p-type semiconducting thin films consisting of a multicomponent oxide composed of Cu oxide and Co oxide is described. The electrical, optical, and crystallographical properties of films deposited by rf magnetron sputtering using (Cu2O)1-x-(CoO)x powder targets were strongly dependent on not only the deposition condition but also the calcination condition as well as the CoO content of the targets. These properties drastically changed in films prepared with a CoO content around 90 mol %. All prepared films, i.e., CoO content in the range from 0 to 100 mol %, were found to be p type, or positive hole conductors, as evidenced from the Seebeck effect: Resistivities in the range from 103 to 10-3 Ω cm. A hole concentration on the order of 1016 cm-3 and a mobility on the order of 10-1 cm2/V s were obtained in an amorphous multicomponent oxide film prepared with a CoO content of 50 mol %. Fabricated thin-film pin heterojunction diodes consisting of a p-type high-resistance multicomponent oxide combined with undoped ZnO and n-type Al-doped ZnO exhibited a rectifying current-voltage characteristic.

  1. Nucleotide recognition by CopA, a Cu+-transporting P-type ATPase

    PubMed Central

    Tsuda, Takeo; Toyoshima, Chikashi

    2009-01-01

    Heavy metal pumps constitute a large subgroup in P-type ion-transporting ATPases. One of the outstanding features is that the nucleotide binding N-domain lacks residues critical for ATP binding in other well-studied P-type ATPases. Instead, they possess an HP-motif and a Gly-rich sequence in the N-domain, and their mutations impair ATP binding. Here, we describe 1.85 Å resolution crystal structures of the P- and N-domains of CopA, an archaeal Cu+-transporting ATPase, with bound nucleotides. These crystal structures show that CopA recognises the adenine ring completely differently from other P-type ATPases. The crystal structure of the His462Gln mutant, in the HP-motif, a disease-causing mutation in human Cu+-ATPases, shows that the Gln side chain mimics the imidazole ring, but only partially, explaining the reduction in ATPase activity. These crystal structures lead us to propose a role of the His and a mechanism for removing Mg2+ from ATP before phosphoryl transfer. PMID:19478797

  2. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    PubMed Central

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-01-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4′-(2,2-dicyanovinyl)-[1,1′-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up. PMID:27196877

  3. Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

    PubMed

    Yang, Chen; Barrelet, Carl J; Capasso, Federico; Lieber, Charles M

    2006-12-01

    We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems. PMID:17163733

  4. MD Simulations of P-Type ATPases in a Lipid Bilayer System.

    PubMed

    Autzen, Henriette Elisabeth; Musgaard, Maria

    2016-01-01

    Molecular dynamics (MD) simulation is a computational method which provides insight on protein dynamics with high resolution in both space and time, in contrast to many experimental techniques. MD simulations can be used as a stand-alone method to study P-type ATPases as well as a complementary method aiding experimental studies. In particular, MD simulations have proved valuable in generating and confirming hypotheses relating to the structure and function of P-type ATPases. In the following, we describe a detailed practical procedure on how to set up and run a MD simulation of a P-type ATPase embedded in a lipid bilayer using software free of use for academics. We emphasize general considerations and problems typically encountered when setting up simulations. While full coverage of all possible procedures is beyond the scope of this chapter, we have chosen to illustrate the MD procedure with the Nanoscale Molecular Dynamics (NAMD) and the Visual Molecular Dynamics (VMD) software suites. PMID:26695055

  5. Towards p-type doping of ZnO by ion implantation

    SciTech Connect

    Coleman, V; Tan, H H; Jagadish, C; Kucheyev, S; Phillips, M; Zou, J

    2005-01-18

    Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 x 10{sup 17} ions/cm{sup 2}) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900 C to 1200 C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.

  6. Surface photovoltage studies of n-type and p-type InP

    NASA Astrophysics Data System (ADS)

    Thurgate, S. M.; Blight, K.; Laceusta, T. D.

    1994-05-01

    Surface photovoltage spectroscopy (SPV) was used to study the initial stages of oxidation of single crystal InP(110) in an attempt to understand the nature and origin of the surface states that develop. Distinct surface states were seen to develop on n-type as the surface was exposed to oxygen. A surface state, associated with cleavage damage, was also observed on p-type. A detailed fit to the experimental data was made by using a model of the dependence of surface charge on photon energy. This was used to unfold the position and intensity of the states. States trailing into the band gap from the bulk bands were seen on both n- and p-types. The analysis also indicated that pairs of isolated states, a donor and an acceptor state, were produced. On p-type, these were present on the clean, cleaved surface while they developed with oxygen exposure on n-type. These states are consistent with the point defect states proposed by the unified defect model. The time response of the SPV signal was also recorded for these surfaces. They were analysed by careful fitting to a model describing the charging and discharging characteristics. This revealed that the midgap state on n-type had a fast and a slow component.

  7. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells.

    PubMed

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R

    2016-01-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4'-(2,2-dicyanovinyl)-[1,1'-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up. PMID:27196877

  8. Efficient synthesis of triarylamine-based dyes for p-type dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Wild, Martin; Griebel, Jan; Hajduk, Anna; Friedrich, Dirk; Stark, Annegret; Abel, Bernd; Siefermann, Katrin R.

    2016-05-01

    The class of triarylamine-based dyes has proven great potential as efficient light absorbers in inverse (p-type) dye sensitized solar cells (DSSCs). However, detailed investigation and further improvement of p-type DSSCs is strongly hindered by the fact that available synthesis routes of triarylamine-based dyes are inefficient and particularly demanding with regard to time and costs. Here, we report on an efficient synthesis strategy for triarylamine-based dyes for p-type DSSCs. A protocol for the synthesis of the dye-precursor (4-(bis(4-bromophenyl)amino)benzoic acid) is presented along with its X-ray crystal structure. The dye precursor is obtained from the commercially available 4(diphenylamino)benzaldehyde in a yield of 87% and serves as a starting point for the synthesis of various triarylamine-based dyes. Starting from the precursor we further describe a synthesis protocol for the dye 4-{bis[4‧-(2,2-dicyanovinyl)-[1,1‧-biphenyl]-4-yl]amino}benzoic acid (also known as dye P4) in a yield of 74%. All synthesis steps are characterized by high yields and high purities without the need for laborious purification steps and thus fulfill essential requirements for scale-up.

  9. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  10. Mechanistic studies of phosphoserine phosphatase, an enzyme related to P-type ATPases.

    PubMed

    Collet, J F; Stroobant, V; Van Schaftingen, E

    1999-11-26

    Phosphoserine phosphatase belongs to a new class of phosphotransferases forming an acylphosphate during catalysis and sharing three motifs with P-type ATPases and haloacid dehalogenases. The phosphorylated residue was identified as the first aspartate in the first motif (DXDXT) by mass spectrometry analysis of peptides derived from the phosphorylated enzyme treated with NaBH(4) or alkaline [(18)O]H(2)O. Incubation of native phosphoserine phosphatase with phosphoserine in [(18)O]H(2)O did not result in (18)O incorporation in residue Asp-20, indicating that the phosphoaspartate is hydrolyzed, as in P-type ATPases, by attack of the phosphorus atom. Mutagenesis studies bearing on conserved residues indicated that four conservative changes either did not affect (S109T) or caused a moderate decrease in activity (G178A, D179E, and D183E). Other mutations inactivated the enzyme by >80% (S109A and G180A) or even by >/=99% (D179N, D183N, K158A, and K158R). Mutations G178A and D179N decreased the affinity for phosphoserine, suggesting that these residues participate in the binding of the substrate. Mutations of Asp-179 decreased the affinity for Mg(2+), indicating that this residue interacts with the cation. Thus, investigated residues appear to play an important role in the reaction mechanism of phosphoserine phosphatase, as is known for equivalent residues in P-type ATPases and haloacid dehalogenases. PMID:10567362

  11. Thermal Conductivity of Nanocrystalline Silicon Prepared by Plasma-Enhanced Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jugdersuren, Battogtokh; Liu, Xiao; Kearney, Brian; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Katz, Michael; Stroud, Rhonda

    Nanocrystallization by ball milling has been used successfully to reduce the thermal conductivity of silicon-germanium alloys (SiGe) and turn them into useful thermoelectric materials at a temperature of a few hundred degrees C. Currently the smallest grain sizes in nanocrystalline SiGe are in the 10 nm range. Germanium is added to scatter short wavelength phonons by impurity scattering. In this work, we report a record low thermal conductivity in nanocrystalline silicon prepared by plasma-enhanced chemical-vapor deposition. By varying hydrogen to silane ratio, we can vary the average grain sizes from greater than 10 nm down to 3 nm, as determined by both the high resolution transmission electron microscopy and X-ray diffraction. The values of thermal conductivity, as measured by the 3 ω technique, can be correspondingly modulated from that of ball-milled nanocrystalline SiGe to a record low level of 0.3 W/mK at room temperature. This low thermal conductivity is only about 1/3 of the minimum thermal conductivity limit of silicon. Possible causes of such a large reduction are discussed. Work supported by the Office of Naval Research.

  12. Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon

    NASA Astrophysics Data System (ADS)

    Hirota, Jun; Shinoda, Hiroyuki; Koshida, Nobuyoshi

    2004-04-01

    To confirm the applicability of thermally induced ultrasonic emission from nanocrystalline silicon (nc-Si) devices as radiation pressure generators, the dynamic response has been investigated under a pulse operation mode. The nc-Si emitter is fabricated on a p-type Si wafer by conventional electrochemical anodization with subsequent formation of the surface electrode. Due to the flat nature of the frequency response of this emitter, the device emits an acoustic wave with little distortion under the pulse-drive condition. It is shown that a significant radiation pressure of 34.5 Pa is generated by a concentrated burst-like electrical input, and that a beam located at a distance can be levitated as a result of the mechanical loading effect. This silicon-based emitter is attractive for applications to integrated nano- or micro-electromechanical systems.

  13. Photoconducting nanocrystalline lead sulphide thin films obtained by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Kotadiya, Naresh B.; Kothari, Anjana J.; Tiwari, Devendra; Chaudhuri, Tapas K.

    2012-09-01

    A chemical bath deposition method of preparing photoconducting nanocrystalline lead sulphide (PbS) thin films at room temperature (RT) is described. The aqueous bath of lead acetate, thiourea, and ammonium hydroxide produce films of about 100 nm thicknesses in 45 minutes. X-ray diffraction (XRD) studies show that these films are nanocrystalline cubic PbS with 10 nm crystallite size. Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) revealed that the films consist of spherical grains of sizes 100 to 200 nm. The transmission spectra of the films show onset of absorption edge around 850 nm and the bandgap is around 1.65 eV. The films are p-type with dark conductivity of 2.5×10-3 S/cm and mobility of 0.07 cm2/Vṡs. The photosensitivity is 6-7 for an illumination of 80 mW/cm2 from a halogen lamp (50 W, 12 V). Transient photoconductivity measurements reveal short and long life times of minority carriers. Thermoelectric and photothermoelectric studies show that photoconductivity in these films is mainly due to photogenerated majority carriers.

  14. Synthesis and sintering of nanocrystalline hydroxyapatite powders by citric acid sol-gel combustion method

    SciTech Connect

    Han Yingchao; Li Shipu; Wang Xinyu; Chen Xiaoming

    2004-01-03

    The citric acid sol-gel combustion method has been used for the synthesis of nanocrystalline hydroxyapatite (HAP) powder from calcium nitrate, diammonium hydrogen phosphate and citric acid. The phase composition of HAP powder was characterized by X-ray powder diffraction analysis (XRD). The morphology of HAP powder was observed by transmission electron microscope (TEM). The HAP powder has been sintered into microporous ceramic in air at 1200 deg. C with 3 h soaking time. The microstructure and phase composition of the resulting HAP ceramic were characterized by scanning electron microscope (SEM) and XRD, respectively. The physical characterization of open porosity and flexural strength have also been carried out.

  15. Temperature Dependent Tensile Fracture Stress of n- and p-Type Filled-Skutterudite Materials

    SciTech Connect

    Salvador, James R.; Yang, Jihui; Wereszczak, Andrew A; Wang, Hsin; Cho, Jung Y

    2011-01-01

    While materials with excellent thermoelectric performance are most desirable for higher heat to electrical energy conversion efficiency, thermoelectric materials must also be sufficiently mechanically robust to withstand the large number of thermal cycles and vibrational stresses likely to be encountered while in service, particularly in automotive applications. Further these TE materials should be composed of non-toxic and naturally abundant constituent elements and be available as both n- and p-type varieties. Skutterudite based thermoelectric materials seemingly fit this list of criteria. In this contribution we report on the synthesis, tensile fracture strengths, low temperature electrical and thermal transport properties, and coefficients of thermal expansion (CTE), of the n-type skutterudite La{sub 0.05({+-}0.01)}Ba{sub 0.07({+-}0.04)}Yb{sub 0.08({+-}0.02)}Co{sub 4.00({+-}0.01)}Sb{sub 12.02({+-}0.03)} and the p-type Ce{sub 0.30({+-}0.02)}Co{sub 2.57({+-}0.02)}Fe{sub 1.43({+-}0.02)}Sb{sub 11.98({+-}0.03)}. Both materials have tensile fracture strengths that are temperature independent up to 500 C, and are in the range of {approx}140 MPa as measured by a three point bend flexure test fixture described herein. The CTE's were measured by dual rod dilatometry and were determined to be 10.3 ppm/C for the n-type material and 11.5 ppm/C for p-type up to 450 C.

  16. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-01

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future. PMID:24975009

  17. Method of mitigating titanium impurities effects in p-type silicon material for solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M. (Inventor)

    1980-01-01

    Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

  18. Does p-type ohmic contact exist in WSe2-metal interfaces?

    NASA Astrophysics Data System (ADS)

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2015-12-01

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for

  19. Fabrication and performance tests of a segmented p-type HPGe detector

    NASA Astrophysics Data System (ADS)

    King, George S.; Avignone, Frank T.; Cox, Christopher E.; Hossbach, Todd W.; Jennings, Wayne; Reeves, James H.

    2008-10-01

    A p-type semi-coaxial HPGe detector has been segmented by cutting, with a diamond saw, and etching four circumferential grooves through the Li-diffused dead layer. The degree of segmentation was tested using a well-collimated low-energy gamma-ray source. An analysis cut that rejected events depositing energy in more than one segment was applied to an energy interval of 2038±5 keV, the region of interest ( Q ββ) for 76Ge 0 νββ decay experiments. This segmentation cut resulted in a reduction of the Compton continuum of 59%.

  20. Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition

    PubMed Central

    2013-01-01

    Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect. PMID:23331856

  1. Direct Measurement of Electron Beam Induced Currents in p-type Silicon

    SciTech Connect

    Han, M.G.; Zhu, Y.; Sasaki, K.; Kato, T.; Fisher, C.A.J.; Hirayama, T.

    2010-08-01

    A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale.

  2. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    SciTech Connect

    Gahlawat, S.; Wheeler, L.; White, K. W. E-mail: kwwhite@uh.edu; He, R.; Chen, S.; Ren, Z. F. E-mail: kwwhite@uh.edu

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  3. Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field.

    PubMed

    Hur, Ji-Hyun; Jeon, Sanghun

    2015-12-11

    We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si(1-x)Ge(x). The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T(3/2)/λ relation and is proportional to the germanium density x. We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc. PMID:26567870

  4. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures.

    PubMed

    Pietruszka, Rafal; Witkowski, Bartlomiej Slawomir; Luka, Grzegorz; Wachnicki, Lukasz; Gieraltowska, Sylwia; Kopalko, Krzysztof; Zielony, Eunika; Bieganski, Piotr; Placzek-Popko, Ewa; Godlewski, Marek

    2014-01-01

    Selected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100) are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%. PMID:24605282

  5. Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection

    SciTech Connect

    Mandalapu, L.J.; Yang, Z.; Xiu, F.X.; Zhao, D.T.; Liu, J.L.

    2006-02-27

    ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts. Current-voltage measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  6. Dynamic electrical conduction in p-type CuIn3Se5

    NASA Astrophysics Data System (ADS)

    Essaleh, L.; Marín, G.; Wasim, S. M.; Alimoussa, A.; Bourial, A.

    2016-04-01

    In this work, ac electrical conductivity measurements were studied for the first time in p type bulk ternary semiconductor compound CuIn3Se5. The dynamic electrical conductivity is analyzed in the frequency range 20 Hz to 1 MHz and temperature from 308 K to 500 K. The relaxation times for the grain and grain boundaries were studied from the second derivative of electric modulus versus frequency at various temperatures. The relaxation time is found to decrease with increasing temperature and to obey the Arrhenius relationship. The values of activation energies for conduction and relaxation times are obtained.

  7. Fabrication and morphology of porous p-type SiC

    NASA Astrophysics Data System (ADS)

    Shishkin, Y.; Ke, Y.; Devaty, R. P.; Choyke, W. J.

    2005-02-01

    Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When the etching is done on the C face, the pore wall thickness decreases with increasing current density. The morphology of the front surface of the sample depends on the prior treatment of the workpiece surface. The porosity is estimated based on the analysis of scanning electron microscope images, charge-transfer calculations, and gravimetric analysis.

  8. Peculiarities of high electric field conduction in p-type diamond

    NASA Astrophysics Data System (ADS)

    Mortet, V.; Trémouilles, D.; Bulíř, J.; Hubík, P.; Heller, L.; Bedel-Pereira, E.; Soltani, A.

    2016-04-01

    The electrical properties of chemical vapour deposited p-type epitaxial diamond layers are studied in high electric field conditions. The quasi-static current-voltage characteristics have been measured using transmission-line pulse method with 100 ns pulses. Reproducible impurity impact ionization avalanche breakdown occurs at a critical electrical field in the range of 100-200 kV cm-1 depending on the acceptor concentration and temperature, leading to complete ionisation of neutral impurities. The current-voltage characteristics exhibit an S-shape with the bi-stable conduction characteristic of impurity impact ionisation.

  9. Experimental identification of p-type conduction in fluoridized boron nitride nanotube

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Li, Wuxia; Tang, Chengchun; Li, Lin; Lin, Jing; Gu, Changzhi

    2013-04-01

    The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persist significant field effect with holes predominated; it also suggests that F-doping remarkably modified the band gap with F atoms preferred to be absorbed on B sites. Parameters, including the resistivity, charge concentration, and mobility, were further retrieved from the I-V curves. Our results indicate that device characterization is an effective method to reveal the specific properties of BNNTs.

  10. Microemulsion-based synthesis of nanocrystalline materials.

    PubMed

    Ganguli, Ashok K; Ganguly, Aparna; Vaidya, Sonalika

    2010-02-01

    Microemulsion-based synthesis is found to be a versatile route to synthesize a variety of nanomaterials. The manipulation of various components involved in the formation of a microemulsion enables one to synthesize nanomaterials with varied size and shape. In this tutorial review several aspects of microemulsion based synthesis of nanocrystalline materials have been discussed which would be of interest to a cross-section of researchers working on colloids, physical chemistry, nanoscience and materials chemistry. The review focuses on the recent developments in the above area with current understanding on the various factors that control the structure and dynamics of microemulsions which can be effectively used to manipulate the size and shape of nanocrystalline materials. PMID:20111772

  11. Nanosecond magnetization reversal in nanocrystalline magnetic films

    NASA Astrophysics Data System (ADS)

    Rahman, I. Z.; Gandhi, A. A.; Khaddem-Mousavi, M. V.; Lynch, T. F.; Rahman, M. A.

    2007-03-01

    This paper reports on the investigation of dynamic magnetization reversal process in electrodeposited nanocrystalline Ni and Ni80Fe20 films by employing nanosecond magnetic pulse technique. The surface morphology has been investigated using SEM, EDAX, XRD and AFM analyses and static magnetic properties of the films are characterized by vibrating sample magnetometer (VSM). Two different techniques are designed and employed to study the nanosecond magnetization reversal process in nanocrystalline thin films: Magneto-Optical Kerr Effect (MOKE) and nanosecond pulsed field magnetometer. Results of dynamical behavior as a function of several variables such as magnitude of applied bias magnetic field, amplitude and width of the pulsed magnetic field are analyzed in detail using both techniques. A computer simulation package called Object Oriented Micro-Magnetic Framework (OOMMF) has been used to simulate the magnetic domain patterns of the samples.

  12. Nanocrystalline cobalt oxides for carbon nanotube growth

    NASA Astrophysics Data System (ADS)

    Guo, Kun; Jayatissa, Ahalapitiya H.; Jayasuriya, Ambalangodage C.

    2007-09-01

    Thin Films of nanocrystalline cobalt oxide were formed by sol-gel method. Structure, optical properties and surface properties of these films were investigated by numerous characterization techniques. These films were successfully fabricated on glass substrates below 500°C. . Micropatterns of cobalt oxide thin films were also fabricated on glass and silicon substrates by employing a lift-off method. Crystal size of these nanocrystalline cobalt films could be successfully controllable by varying the amount of cobalt precursors and number of layers. These films were used as the seeding layers for carbon nanotube growth in a CVD process By changing the concentration of monomer precursors in the solgel coating solutions, different size nanoclusters hence different size carbon nanotubes could be synthesized in CVD process. This method can be used for controlled growth of carbon nanotubes for many different applications. In this paper, detail of these experimental results will be presented.

  13. Solvent-dependent dual-mode photochromism between T- and P-types in a dipyrrinone derivative.

    PubMed

    Sakata, Yoko; Fukushima, Satomi; Akine, Shigehisa; Setsune, Jun-ichiro

    2016-01-21

    A newly synthesized dipyrrinone derivative bearing an ethoxycarbonyl group at the pyrrolic-α position exhibited solvent-dependent dual-mode photochromism between T- and P-types. While this molecule underwent thermally reversible (T-type) photoresponsive reaction in chloroform, it became a thermally irreversible (P-type) system in methanol. PMID:26615770

  14. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    SciTech Connect

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  15. p-type conduction induced by N-doping in {alpha}-Fe{sub 2}O{sub 3}

    SciTech Connect

    Morikawa, Takeshi; Kitazumi, Kousuke; Takahashi, Naoko; Arai, Takeo; Kajino, Tsutomu

    2011-06-13

    A p-type N-doped {alpha}-Fe{sub 2}O{sub 3} was developed by magnetron sputtering of a Fe{sub 2}O{sub 3} target in a plasma containing N{sub 2} and Ar followed by postannealing. Photoelectrochemical measurement under visible light irradiation (>410 nm) showed that N-Fe{sub 2}O{sub 3} exhibits a typical cathodic photocurrent originated from the p-type conduction. X-ray photoemission spectroscopy indicated that the atomic N incorporated substitutionally at O sites was responsible for the p-type conduction. The concentration of acceptors was very close to that for Zn-doped Fe{sub 2}O{sub 3}, a typical p-type {alpha}-Fe{sub 2}O{sub 3}. This finding would stimulate further research on p-type Fe{sub 2}O{sub 3} for solar fuel generation, etc.

  16. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

    PubMed

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  17. Characteristics of p-type transparent conductive CuCrO2 thin films

    NASA Astrophysics Data System (ADS)

    Yu, Ruei-Sung; Wu, Chung-Ming

    2013-10-01

    Cu-Cr-O films were prepared using reactive magnetron sputtering deposition followed by annealing at temperatures ranging from 550 to 625 °C in 25 °C increments. Correlations between the optoelectronic and microstructural properties of the p-type CuCrO2 films are discussed. The as-deposited film was amorphous; after annealing at 550 and 575 °C, films adopted mixed CuO and CuCr2O4 phases. Annealing at 600 °C led to the formation of a dominant phase of delafossite CuCrO2. The 625 °C-annealed film was single-phase CuCrO2 which had a bar- and polygonal-like mixed surface appearance, with a root mean square roughness of 17.7 nm. CuCrO2 is an intrinsic p-type semiconductor which exhibits electrical conductivity and transparency over the visible wavelength range. Two higher-energy subband transitions at 3.69 and 4.82 eV were observed in the band structure of CuCrO2. Point defects were the main reason source of hole carrier scattering in the material. The single-phase CuCrO2 film had the lowest resistivity of the films, 4.31 Ω cm, and had a direct band gap of 3.14 eV and light transmittance of 62% at 600 nm.

  18. Easily doped p-type, low hole effective mass, transparent oxides

    PubMed Central

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-01-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications – i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe. PMID:26854336

  19. Does p-type ohmic contact exist in WSe2-metal interfaces?

    PubMed

    Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge; Zhong, Hongxia; Cong, Linxiao; Ye, Meng; Ni, Zeyuan; Song, Zhigang; Yang, Jinbo; Shi, Junjie; Li, Ju; Lu, Jing

    2016-01-14

    Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices. PMID:26666570

  20. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  1. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathon L.; Vandersande, Jan; Fleurial, Jean-Pierre

    1992-01-01

    Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

  2. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    PubMed

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics. PMID:26624921

  3. Easily doped p-type, low hole effective mass, transparent oxides

    NASA Astrophysics Data System (ADS)

    Sarmadian, Nasrin; Saniz, Rolando; Partoens, Bart; Lamoen, Dirk

    2016-02-01

    Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

  4. Structural and Thermoelectric Properties of Polycrystalline p-Type Mg2- x Li x Si

    NASA Astrophysics Data System (ADS)

    Nieroda, P.; Kolezynski, A.; Oszajca, M.; Milczarek, J.; Wojciechowski, K. T.

    2016-07-01

    The aim of this study was to determine the location of Li atoms in Mg2Si structure, and verify the influence of Li dopant on the transport properties of obtained thermoelectric materials. The results of theoretical studies of the electronic band structure (full potential linearized augmented plane wave method) in Li-doped Mg2Si are presented. Theoretical calculations indicate that only in the case when Li is located in the Mg position, the samples will have p-type conduction. To confirm the theoretical predictions, a series of samples with nominal composition Mg2- x Li x Si ( x = 0-0.5) were prepared using the spark plasma sintering (SPS) method. Structural and phase composition analyses were carried out by x-ray and neutron powder diffraction, as well as scanning electron microscopy. Neutron diffraction studies confirmed that the lithium atoms substitute magnesium in the Mg2Si structure. The investigations of the influence of Li dopant on the transport properties, i.e. electrical conductivity, the Seebeck coefficient and the thermal conductivity, were carried out in a temperature range from 340 K to 720 K. Carrier concentration was measured with Hall method. The positive values of the Seebeck coefficient and Hall coefficient indicate that all examined samples show p-type conductivity. On the basis of the experimental data, the temperature dependencies of the thermoelectric figure of merit ZT were calculated.

  5. Conducting mechanism in the epitaxial p -type transparent conducting oxide C r2O3:Mg

    NASA Astrophysics Data System (ADS)

    Farrell, L.; Fleischer, K.; Caffrey, D.; Mullarkey, D.; Norton, E.; Shvets, I. V.

    2015-03-01

    Epitaxial p -type transparent conducting oxide (TCO) C r2O3:Mg was grown by electron-beam evaporation in a molecular beam epitaxy system on c -plane sapphire. The influence of Mg dopants and the oxygen partial pressure were investigated by thermoelectric and electrical measurements. The conduction mechanism is analyzed using the small-polaron hopping model, and hopping activation energies have been determined, which vary with doping concentration in the range of 210-300 ± 5 meV. Films with better conductivity were obtained by postannealing. The effect of postannealing is discussed in terms of a crystallographic reordering of the Mg dopant. The highest Seebeck mobilities obtained from thermoelectric measurements are of the order of 10-4cm2V-1s-1 . We investigate the fundamental properties of a Mg dopant in a high crystalline quality epitaxial film of a binary oxide, helping us understand the role of short range crystallographic order in a p -type TCO in detail.

  6. Tailoring of the Metal-N/P-Type GaSb Interface Properties for Device Production

    SciTech Connect

    Varblianska, K.; Tzeneva, S.; Comninou, Ph.; Nihtianova, D.

    2007-04-23

    There are some difficulties in producing Schottky barriers (SB) to p-type GaSb and ohmic contacts (OC) to n-type GaSb connected with the physical nature of the GaSb itself. By applying low energy Ar ion sputtering at 200-700V and (NH4)2S solution treatment of the p-type substrates we achieved a rectifying behavior of the p-GaSb/Pd contacts. The same procedure combined with a proper annealing led to the production of good n-GaSb/Pd/Ge/Au ohmic contacts. The electrical behavior of the SB and OC is inferred from their current-voltage characteristics on specially prepared diode structures. SEM and TEM investigations are conducted to specify the surface and interface reactions during the processing. We interpret these results in terms of the generation of such a Ga to Sb vacancy concentration ratio during the ion sputtering that enhances the incorporation of Ge and S as donor impurities in the GaSb surface.

  7. Development of improved p-type Si-20 at. % Ge by addition of fullerite

    NASA Astrophysics Data System (ADS)

    Cook, B. A.; Harringa, J. L.

    1994-08-01

    In a series of experiments designed to evaluate the possibility of lowering the lattice thermal conductivity of silicon-germanium alloys through the formation of an inert, intragranular nanophase, a number of p-type Si-20 at. % Ge alloys, with a nominal doping level of 0.5 at. % boron, were prepared with varying amounts of fullerite, a mixture of 90% C60+10% C70 with a particle size of 0.7 nm. The alloys were synthesized by mechanical alloying (MA) and the fullerite was added at various stages of the preparation sequence. Compacts consolidated by hot pressing at temperatures of 1200 °C to 1265 °C were found to be fully dense and homogeneous. Each compact was characterized by Hall effect at room temperature and also by electrical resistivity, Seebeck coefficient, and thermal diffusivity measurements to 1000 °C. A reduction in thermal conductivity of up to 22% compared to standard p-type alloys was observed in samples containing 0.8 weight percent additions. In this study, a maximum integrated average figure of merit, Z, between 300 and 1000 °C of 0.65×10-3 °C-1 was obtained, corresponding to 0.4 weight percent addition of fullerite. Observation of selected samples by transmission electron microscopy revealed that the fullerite reacted with silicon to form nanophase SiC inclusions.

  8. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    PubMed Central

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  9. Quantum mechanical simulation of hole transport in p-type Si Schottky barrier MOSFETs.

    PubMed

    Choi, Wonchul; Shin, Mincheol

    2011-07-01

    A full quantum-mechanical simulation of p-type nanowire Schottky barrier metal oxide silicon field effect transistors (SB-MOSFETs) is performed by solving the three-dimensional Schrödinger and Poisson's equations self-consistently. The non-equilibrium Green's function (NEGF) approach is adopted to treat hole transport, especially quantum tunneling through SB. In this work, p-type nanowire SB-MOSFETs are simulated based on the 3-band k.p method, using the k.p parameters that were tuned by benchmarking against the tight-binding method with sp3s* orbitals. The device shows a strong dependence on the transport direction, due to the orientation-sensitive tunneling effective mass and the confinement energy. With regard to the subthreshold slope, the [110] and [111] oriented devices with long channel show better performance, but they are more vulnerable to the short channel effects than the [100] oriented device. The threshold voltage also shows a greater variation in the [110] and [111] oriented devices with the decrease of the channel length. PMID:22121621

  10. Proposed explanation of the p-type doping proclivity of ZnTe

    NASA Astrophysics Data System (ADS)

    Dow, John D.; Hong, Run-Di; Klemm, Stefan; Ren, Shang Yuan; Tsai, M.-H.; Sankey, Otto F.; Kasowski, R. V.

    1991-02-01

    An explanation is proposed for the fact that ZnTe is unique among the II-VI compound semiconductors in that it can be doped p type rather easily: a p-like deep-level resonance lies within the valence band of ZnTe and emerges into the fundamental band gap with increasing Se content x in ZnTe1-xSex random alloys. This level generates free holes when it lies below the Fermi energy in the valence band, making its parent defect a shallow acceptor. When the level moves into the gap, the impurity becomes a deep hole trap. The native and foreign antisite defects ZnTe and LiTe are suggested as possible parent defects of the relevant deep level; they are predicted to be shallow acceptors in ZnTe, while the corresponding defects are deep traps in other II-VI compound semiconductors. Tests of this proposal are suggested and the substitutional s- and p-bonded deep levels of ZnSe and ZnTe are predicted, extending the theory of Hjalmarson et al. [Phys. Rev. Lett. 44, 810 (1980)]. The possibility of doping ZnSe p type with (antisite) Be is also proposed and discussed.

  11. p-Type polymer-hybridized high-performance piezoelectric nanogenerators.

    PubMed

    Lee, Keun Young; Kumar, Brijesh; Seo, Ju-Seok; Kim, Kwon-Ho; Sohn, Jung Inn; Cha, Seung Nam; Choi, Dukhyun; Wang, Zhong Lin; Kim, Sang-Woo

    2012-04-11

    Enhancing the output power of a nanogenerator is essential in applications as a sustainable power source for wireless sensors and microelectronics. We report here a novel approach that greatly enhances piezoelectric power generation by introducing a p-type polymer layer on a piezoelectric semiconducting thin film. Holes at the film surface greatly reduce the piezoelectric potential screening effect caused by free electrons in a piezoelectric semiconducting material. Furthermore, additional carriers from a conducting polymer and a shift in the Fermi level help in increasing the power output. Poly(3-hexylthiophene) (P3HT) was used as a p-type polymer on piezoelectric semiconducting zinc oxide (ZnO) thin film, and phenyl-C(61)-butyric acid methyl ester (PCBM) was added to P3HT to improve carrier transport. The ZnO/P3HT:PCBM-assembled piezoelectric power generator demonstrated 18-fold enhancement in the output voltage and tripled the current, relative to a power generator with ZnO only at a strain of 0.068%. The overall output power density exceeded 0.88 W/cm(3), and the average power conversion efficiency was up to 18%. This high power generation enabled red, green, and blue light-emitting diodes to turn on after only tens of times bending the generator. This approach offers a breakthrough in realizing a high-performance flexible piezoelectric energy harvester for self-powered electronics. PMID:22409420

  12. Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

    SciTech Connect

    Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin; Girard, Steven N.; Cai, Wei; Porter, Wallace D; Kanatzidis, Mercouri G.; Heremans, J. P.

    2013-01-01

    New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed: they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.

  13. Structure-function relationship in P-type ATPases--a biophysical approach.

    PubMed

    Apell, H-J

    2003-01-01

    P-type ATPases are a large family of membrane proteins that perform active ion transport across biological membranes. In these proteins the energy-providing ATP hydrolysis is coupled to ion-transport that builds up or maintains the electrochemical potential gradients of one or two ion species across the membrane. P-type ATPases are found in virtually all eukaryotic cells and also in bacteria, and they are transporters of a broad variety of ions. So far, a crystal structure with atomic resolution is available only for one species, the SR Ca-ATPase. However, biochemical and biophysical studies provide an abundance of details on the function of this class of ion pumps. The aim of this review is to summarize the results of preferentially biophysical investigations of the three best-studied ion pumps, the Na,K-ATPase, the gastric H,K-ATPase, and the SR Ca-ATPase, and to compare functional properties to recent structural insights with the aim of contributing to the understanding of their structure-function relationship. PMID:12811587

  14. Fullerene C{sub 70} as a p-type donor in organic photovoltaic cells

    SciTech Connect

    Zhuang, Taojun; Wang, Xiao-Feng E-mail: zrhong@ucla.edu Sano, Takeshi; Kido, Junji E-mail: zrhong@ucla.edu; Hong, Ziruo E-mail: zrhong@ucla.edu; Li, Gang; Yang, Yang

    2014-09-01

    Fullerenes and their derivatives have been widely used as n-type materials in organic transistor and photovoltaic devices. Though it is believed that they shall be ambipolar in nature, there have been few direct experimental proofs for that. In this work, fullerene C{sub 70}, known as an efficient acceptor, has been employed as a p-type electron donor in conjunction with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile as an electron acceptor in planar-heterojunction (PHJ) organic photovoltaic (OPV) cells. High fill factors (FFs) of more than 0.70 were reliably achieved with the C{sub 70} layer even up to 100 nm thick in PHJ cells, suggesting the superior potential of fullerene C{sub 70} as the p-type donor in comparison to other conventional donor materials. The optimal efficiency of these unconventional PHJ cells was 2.83% with a short-circuit current of 5.33 mA/cm{sup 2}, an open circuit voltage of 0.72 V, and a FF of 0.74. The results in this work unveil the potential of fullerene materials as donors in OPV devices, and provide alternative approaches towards future OPV applications.

  15. Transporters, chaperones, and P-type ATPases controlling grapevine copper homeostasis.

    PubMed

    Leng, Xiangpeng; Mu, Qian; Wang, Xiaomin; Li, Xiaopeng; Zhu, Xudong; Shangguan, Lingfei; Fang, Jinggui

    2015-11-01

    With more copper and copper-containing compounds used as bactericides and fungicides in viticulture, copper homeostasis in grapevine (Vitis) has become one of the serious environmental crises with great risk. To better understand the regulation of Cu homeostasis in grapevine, grapevine seedlings cultured in vitro with different levels of Cu were utilized to investigate the tolerance mechanisms of grapevine responding to copper availability at physiological and molecular levels. The results indicated that Cu contents in roots and leaves arose with increasing levels of Cu application. With copper concentration increasing, malondialdehyde (MDA) content increased in roots and leaves and the activities of superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT) increased to protect the plant itself from damage. The expression patterns of 19 genes, encoding transporters, chaperones, and P-type ATPases involved in copper homeostasis in root and leaf of grapevine seedling under various levels of Cu(2+) were further analyzed. The expression patterns indicated that CTr1, CTr2, and CTr8 transporters were significantly upregulated in response both to Cu excess and deficiency. ZIP2 was downregulated in response to Cu excess and upregulated under Cu-deficient conditions, while ZIP4 had an opposite expression pattern under similar conditions. The expression of chaperones and P-type ATPases in response to Cu availability in grapevine were also briefly studied. PMID:26054906

  16. Investigation of band bending in n- and p-type gallium nitride

    NASA Astrophysics Data System (ADS)

    Foussekis, Michael Alexander

    This dissertation details the study of band bending in n- and p-type GaN samples with a Kelvin probe utilizing different illumination geometries, ambients (air, oxygen, vacuum 10-6 mbar), and sample temperatures (77 -- 650 K). The Kelvin probe, which is mounted inside an optical cryostat, is used to measure the surface potential. Illumination of the GaN surface with band-to-band light generates electron-hole pairs, which quickly separate in the depletion region due to a strong electric field caused by the near-surface band bending. The charge that is swept to the surface reduces the band bending and generates a surface photovoltage (SPV). Information about the band bending can be obtained by fitting the SPV measurements with a thermionic model based on the emission of charge carriers from bulk to surface and vice versa. The band bending in freestanding n-type GaN templates has been evaluated. The Ga-polar and N-polar surfaces exhibit upward band bending of about 0.74 and 0.57 eV, respectively. The surface treatment also plays a major role in the SPV behavior, where the SPV for mechanical polished surfaces restores faster than predicted by a thermionic model in dark. When measuring the photoluminescence (PL) signal, the PL from mechanically polished surfaces was about 4 orders of magnitude smaller than the PL from chemically mechanically polished surfaces. The PL and SPV behaviors were explained by the presence of a large density of defects near the surface, which quench PL and aid in the restoration of the SPV via electron hopping between defects. Temperature-dependent SPV studies have also been performed on doped n- and p-type GaN samples. In Si-doped n-type GaN, the estimated upward band bending was about 1 eV at temperatures between 295 and 500 K. However, in p-type GaN, the downward band bending appeared to increase with increasing temperature, where the magnitude of band bending increased from 0.8 eV to 2.1 eV as the temperature increased from 295 to 650 K. It

  17. Solid state consolidation nanocrystalline copper-tungsten using cold spray

    SciTech Connect

    Hall, Aaron Christopher; Sarobol, Pylin; Argibay, Nicolas; Clark, Blythe; Diantonio, Christopher

    2015-09-01

    It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

  18. Fabrication and characterization of nano-crystalline diamond films

    SciTech Connect

    Gruen, D.M.; Pan, X.; Krauss, A.R.; Liu, S.; Luo, J.; Foster, C.M.

    1993-11-01

    Highly uniform, smooth nano-crystalline diamond films have been fabricated with a magneto-active microwave CVD system. Top and bottom magnet currents were 145A and 60A, while microwave power and substrate temperature were controlled at 1500W and 850{degrees}C during deposition. Total processing pressure was regulated at 40 Pa (300 mTorr), with gas flow rates of 30 sccm of hydrogen, 2.4 sccm of methane and 1 sccm of oxygen. Diamond films obtained under the above conditions have grain sizes between 0.1--0.3 {mu}m, a growth rate of 0.1{mu}m/hr and a mean roughness of 14.95 nm. Characterization techniques have involved XRD, Raman spectroscopy, SEM, AFM and TEM. Both X-ray and electron diffraction patterns show no evidence of non-diamond phases. Although a high density of twins and stacking faults were revealed by HREM, compact diamond grains and clean intergranular boundaries (no graphitic or amorphous phases) were observed.

  19. EXAFS Study of N- And P-Type Ba(8)Ga(16)Ge(30)

    SciTech Connect

    Jiang, Y.; Bridges, F.; Avila, M.A.; Takabatake, T.; Guzman, J.; Kurczveil, G.

    2009-05-18

    We report extended x-ray absorption fine-structure (EXAFS) studies of n- and p-type Ba{sub 8}Ga{sub 16}Ge{sub 30} samples (type-I clathrate) at the Ga, Ge, and Ba K edges, to probe the local structure, particularly around the Ba atoms located inside 20- and 24-atom cages (Ba1 and Ba2 sites, respectively) composed of Ga/Ge atoms. In agreement with diffraction analysis, we find Ba2 is off center, with a component in the bc plane (0.15 {angstrom}) comparable to that found in diffraction. However, under the assumption of a stiff cage, we also require a significant a component. This suggests a coupling or attraction between the Ba2 atoms and the hexagonal rings at the top or bottom of the cage that encloses the Ba2 site. Further, changing the a component can change the number of shortest Ba2-Ga/Ge neighbors and hence the coupling of Ba2 to the surrounding cage. Within the cage structures which enclose both Ba sites, the Ga-Ga/Ge distances are slightly longer, while the Ge-Ga/Ge distances are slightly shorter than the average distance reported from diffraction. The longer Ga-Ga/Ge distances indicate that the Ba1 and Ba2 cages may be dimpled or distorted. At the second Ga/Ge distance, the local distortions in the Ba clathrate are smaller than those observed in the Eu clathrate, which likely plays a role in understanding the higher thermal conductivity of Ba clathrates compared to that of Eu clathrates. However, there is no clear difference in the EXAFS between the n- and p-type materials for either the Ba, Ga, or Ge K-edge data, which would explain the difference in thermal conductivity between n- and p-type materials. Finally, an average Einstein temperature for the shortest Ba2-Ga/Ge bonds is comparable to that for Ba1-Ga/Ge. This indicates a large effective spring constant for the closest Ga/Ge atoms to Ba2. We also develop a simple vibrational model to show explicitly the three types of vibration for Ba2 within the type-2 cage.

  20. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  1. Surface Modification of CoO(x) Loaded BiVO₄ Photoanodes with Ultrathin p-Type NiO Layers for Improved Solar Water Oxidation.

    PubMed

    Zhong, Miao; Hisatomi, Takashi; Kuang, Yongbo; Zhao, Jiao; Liu, Min; Iwase, Akihide; Jia, Qingxin; Nishiyama, Hiroshi; Minegishi, Tsutomu; Nakabayashi, Mamiko; Shibata, Naoya; Niishiro, Ryo; Katayama, Chisato; Shibano, Hidetaka; Katayama, Masao; Kudo, Akihiko; Yamada, Taro; Domen, Kazunari

    2015-04-22

    Photoelectrochemical (PEC) devices that use semiconductors to absorb solar light for water splitting offer a promising way toward the future scalable production of renewable hydrogen fuels. However, the charge recombination in the photoanode/electrolyte (solid/liquid) junction is a major energy loss and hampers the PEC performance from being efficient. Here, we show that this problem is addressed by the conformal deposition of an ultrathin p-type NiO layer on the photoanode to create a buried p/n junction as well as to reduce the charge recombination at the surface trapping states for the enlarged surface band bending. Further, the in situ formed hydroxyl-rich and hydroxyl-ion-permeable NiOOH enables the dual catalysts of CoO(x) and NiOOH for the improved water oxidation activity. Compared to the CoO(x) loaded BiVO4 (CoO(x)/BiVO4) photoanode, the ∼6 nm NiO deposited NiO/CoO(x)/BiVO4 photoanode triples the photocurrent density at 0.6 V(RHE) under AM 1.5G illumination and enables a 1.5% half-cell solar-to-hydrogen efficiency. Stoichiometric oxygen and hydrogen are generated with Faraday efficiency of unity over 12 h. This strategy could be applied to other narrow band gap semiconducting photoanodes toward the low-cost solar fuel generation devices. PMID:25802975

  2. Spectroscopic characterization of nanocrystalline chromium nitride (CrN).

    PubMed

    Mangamma, G; Sairam, T N; Dash, S; Rajalakshmi, M; Kamruddin, M; Mittal, V K; Narasimhan, S V; Arora, A K; Sundar, C S; Tyagi, A K; Raj, Baldev

    2007-03-01

    Nanocrystalline chromiuim nitride has been synthesised by direct gas phase nitridation of nanocrystalline chromia at 1100 degrees C in ammonia-atmosphere. XRD of this material showed formation of single phase CrN with particle size around 20 nm. AFM studies showed particle distribution along with some soft agglomerated nanostructures. Nanocrystalline Cr2O3 and partially-as well as fully--converted nanocrystalline CrN were also investigated using various spectroscopic techniques like XPS, FT-IR, and Raman for gaining insight into the conversion pathways. Spectroscopic investigations of these materials clearly indicate that complete conversion of CrN occurs by nitriding at 1100 degrees C for 4 hrs. The salient spectroscopic features of these nanocrystalline materials with respect to their microcrystalline counterparts are discussed. PMID:17450861

  3. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  4. High-output-power densities from molecular beam epitaxy grown n- and p-type PbTeSe-based thermoelectrics via improved contact metallization

    SciTech Connect

    Goodhue, W. G.; Reeder, R. E.; Vineis, C. J.; Calawa, S. D.; Walsh, M. P.; Harman, T. C.; Dauplaise, H. M.; Vangala, S.

    2012-05-15

    Electrical power densities of up to 33 W/cm{sup 2} and up to 12 W/cm{sup 2} were obtained for n-type and p-type PbTeSe-based stand-alone thermoelectric devices, respectively, at modest temperature gradients of {approx}200 deg. C (T{sub cold}= 25 deg. C). These large power densities were enabled by greatly improving electrical contact resistivities in the thermoelectric devices. Electrical contacts with contact resistivities as low as 3.9 x 10{sup -6}{Omega} cm{sup 2} and 4.0 x 10{sup -6}{Omega} cm{sup 2} for n- and p-type telluride-based- materials, respectively, were developed by investigating several metallization schemes and contact layer doping/alloy combinations, in conjunction with a novel contact application process. This process exposes heated semiconductor surfaces to an atomic hydrogen flux under high vacuum for surface cleaning (oxide and carbon removal), followed immediately by an in-situ electron-beam evaporation of the metal layers.

  5. XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting

    NASA Astrophysics Data System (ADS)

    Ma, Quan-Bao; Kaiser, Bernhard; Ziegler, Jürgen; Fertig, Dominic; Jaegermann, Wolfram

    2012-08-01

    The electrochemical (EC) properties of single-crystalline p-type 3C-SiC films on p-Si substrates were investigated as electrodes in H2SO4 aqueous solutions in dark and under white light illumination. Before EC tests, the SiC films were etched by HF solution and aqua-regia-HF solution, respectively, and then investigated by x-ray photoelectron spectroscopy (XPS) including one untreated SiC sample. After EC tests, XPS was also applied to investigate the surface chemical state changes. The EC measurements indicate that the p-type 3C-SiC films on p-Si substrates can generate a cathodic photocurrent as the photocathode, which corresponds to hydrogen production, and generate an anodic photocurrent as the photoanode, which corresponds to oxygen evolution. XPS shows the surface of all the SiC films was oxidized due to anodic oxidation applied by a positive bias during the EC test, which indicates the formation of silicon oxides, CO2 or CO and carbonates.

  6. Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

    SciTech Connect

    Aminorroaya Yamini, Sima E-mail: jsnyder@caltech.edu; Dou, Shi Xue; Mitchell, David R. G.; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Snyder, G. Jeffrey E-mail: jsnyder@caltech.edu

    2015-05-15

    The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe){sub (0.9−x)}(PbSe){sub 0.1}(PbS){sub x,} (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.

  7. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  8. OMVPE growth of P-type GaN using solution Cp2Mg

    NASA Astrophysics Data System (ADS)

    Qi, Yundong; Musante, Charles; Lau, Kei May; Smith, Lesley; Odedra, Rajesh; Kanjolia, Ravi

    2001-11-01

    Bis(cyclopentadienyl)magnesium (Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp2Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp2Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 1018/cm3.

  9. Transient Expression of P-type ATPases in Tobacco Epidermal Cells.

    PubMed

    Poulsen, Lisbeth R; Palmgren, Michael G; López-Marqués, Rosa L

    2016-01-01

    Transient expression in tobacco cells is a convenient method for several purposes such as analysis of protein-protein interactions and the subcellular localization of plant proteins. A suspension of Agrobacterium tumefaciens cells carrying the plasmid of interest is injected into the intracellular space between leaf epidermal cells, which results in DNA transfer from the bacteria to the plant and expression of the corresponding proteins. By injecting mixes of Agrobacterium strains, this system offers the possibility to co-express a number of target proteins simultaneously, thus allowing for example protein-protein interaction studies. In this chapter, we describe the procedure to transiently express P-type ATPases in tobacco epidermal cells, with focus on subcellular localization of the protein complexes formed by P4-ATPases and their β-subunits. PMID:26695049

  10. High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

    NASA Astrophysics Data System (ADS)

    Fernández, J.; Godignon, P.; Berberich, S.; Rebollo, J.; Brezeanu, G.; Millán, J.

    1996-09-01

    This paper presents the high frequency electrical characteristics and modelling of Al/SiO 2/ p-type 6HSiC structures. The oxide was thermally grown under dry conditions. Capacitance and conductance vs bias and frequency measurements have been performed in daylight and exposing the capacitors to u.v. light. The experimental Cm- Vg and Gm- Vg characteristics show hysteresis effects, which are more important when the samples are exposed to 254 nm u.v. light. This behaviour can be explained in terms of interface traps. The MOS structure modelling is based on an interface trap model in which the interface trap levels are considered to be continuously distributed in the SiC bandgap and only charge exchange between interface trap levels and the SiC bands is allowed. From this formulation and from the Gm- f characteristics, the interface state density and the interface trap time constant have been determined.

  11. p-type conduction in beryllium-implanted hexagonal boron nitride films

    NASA Astrophysics Data System (ADS)

    He, B.; Zhang, W. J.; Yao, Z. Q.; Chong, Y. M.; Yang, Y.; Ye, Q.; Pan, X. J.; Zapien, J. A.; Bello, I.; Lee, S. T.; Gerhards, I.; Zutz, H.; Hofsäss, H.

    2009-12-01

    p-type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3×1019 cm-3 and mobility of 27 cm2/V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings.

  12. InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

    SciTech Connect

    Lao, Yan-Feng; Wolde, Seyoum; Unil Perera, A. G.; Zhang, Y. H.; Wang, T. M.; Liu, H. C.; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S.

    2013-12-09

    An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5–3 and 3–10 μm are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e.g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1.8×10{sup 9} cm·Hz{sup 1/2}/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs.

  13. Polymer photovoltaic cell embedded with p-type single walled carbon nanotubes fabricated by spray process

    NASA Astrophysics Data System (ADS)

    Kim, Dal-Ho; Park, Jea-Gun

    2012-08-01

    In the current study, we fabricated polymer (poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61 butyric-acid methyl-ester (PCBM) blend) photovoltaic (PV) cells embedded with p-type single walled carbon nanotubes (SWCNTs) with tangled hair morphology. The power conversion efficiency (PCE) rapidly increased with SWCNT concentration of up to 6.83% coverage, and then decreased and saturated with increasing SWCNT concentration; i.e., the PCE peaks at 5.379%. This tendency is mainly associated with hole transport efficiency toward the transparent electrode (indium-tin-oxide (ITO)) via SWCNTs, directly determining the series resistance and shunt resistance of the polymer PV cells embedded with SWCNTs: the PV cell is increasing shunt resistance and decreasing series resistance.

  14. Study of PbTe p-Type Doping With BaF{sub 2}

    SciTech Connect

    Mengui, U. A.; Rappl, P. H. O.; Diaz, B.; Closs, H.; Ueta, A. Y.; Abramof, E.

    2010-01-04

    We investigate here the electrical and structural properties of PbTe layers doped with BaF{sub 2}. The layers were grown on (111)BaF{sub 2} substrates by molecular beam epitaxy. The nominal doping level, defined as the beam flux ratio between BaF{sub 2} and PbTe, was varied from 0.02 to 1%. The hole concentration increases monotonously from 5x10{sup 17} to 1x10{sup 19} cm{sup -3} as the doping level is raised from 0.02 to 0.4%, and saturates at p approx10{sup 19} cm{sup -3} for higher doping levels. This result demonstrates that PbTe can be effectively p-type doped with BaF{sub 2}. Even for the highest doping levels, the PbTe layers remained with a good structural quality, as evidenced by the (222) x-ray rocking curves.

  15. Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires

    PubMed Central

    2011-01-01

    Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination of non-degenerate transmission and reflection measurements reveal initial ultrafast state filling dynamics independent of the probing photon energy. This behavior is attributed to the occupation of states by photo-generated carriers in the intrinsic hole region of the p-type CuO nanowires located near the top of the valence band. Intensity measurements indicate an upper fluence threshold of 40 μJ/cm2 where carrier relaxation is mainly governed by the hole dynamics. The fast relaxation of the photo-generated carriers was determined to follow a double exponential decay with time constants of 0.4 ps and 2.1 ps. Furthermore, time-correlated single photon counting measurements provide evidence of three exponential relaxation channels on the nanosecond timescale. PMID:22151927

  16. Novel method of separating macroporous arrays from p-type silicon substrate

    NASA Astrophysics Data System (ADS)

    Bobo, Peng; Fei, Wang; Tao, Liu; Zhenya, Yang; Lianwei, Wang; Fu, Ricky K. Y.; Chu, Paul K.

    2012-04-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

  17. Development of radiation hard edgeless detectors with current terminating structure on p-type silicon

    NASA Astrophysics Data System (ADS)

    Verbitskaya, E.; Eremin, V.; Ruggiero, G.

    2011-12-01

    The development of edgeless Si detectors was stimulated by the tasks of the total pp cross-section study in the TOTEM experiment at the Large Hadron Collider at CERN. For this, the dead region at the detector diced side should be reduced below 50 μm. This requirement is successfully realized in edgeless Si detectors with current terminating structure (CTS), which are now operating at LHC. The development of the experiment and future LHC upgrade need the elaboration of radiation hard version of edgeless Si detectors. The current investigation represents an extension in understanding on edgeless detectors operation and development of a new issue - edgeless detectors with CTS on p-type Si.

  18. Hall scattering factors in p-type 4H-SiC with various doping concentrations

    NASA Astrophysics Data System (ADS)

    Asada, Satoshi; Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2016-04-01

    The Hall scattering factor (γH) in p-type 4H-SiC with various aluminum doping concentrations of 5.8 × 1014-7.1 × 1018 cm-3 was investigated from 300 to 900 K. γH was determined by comparing the Hall coefficient with the theoretical carrier concentration derived from acceptor and donor concentrations obtained from secondary ion mass spectrometry and capacitance-voltage measurements. γH decreased with increasing temperature or doping concentration; γH = 1-0.4 for the doping concentration of 5.8 × 1014 cm-3 and γH = 0.5-0.2 for the doping concentration of 7.1 × 1018 cm-3. The dependence might be caused by the anisotropic and nonparabolic valence band structure of 4H-SiC.

  19. Studies of minority carrier diffusion length increase in p-type ZnO:Sb

    SciTech Connect

    Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; Chow, P.

    2006-10-15

    Minority electron diffusion length was measured in p-type, Sb-doped ZnO as a function of temperature using the electron beam induced current technique. A thermally induced increase of electron diffusion length was determined to have an activation energy of 184{+-}10 meV. Irradiation with a low energy (5 kV) electron beam also resulted in an increase of diffusion length with a similar activation energy (219{+-}8 meV). Both phenomena are suggested to involve a Sb{sub Zn}-2V{sub Zn} acceptor complex. Saturation and relaxation dynamics of minority carrier diffusion length are explored. Details of a possible mechanism for diffusion length increase are presented.

  20. Phonon bottleneck in p-type Ge/Si quantum dots

    SciTech Connect

    Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.

    2015-11-23

    We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

  1. Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes.

    PubMed

    Han, Tae-Hee; Kwon, Sung-Joo; Li, Nannan; Seo, Hong-Kyu; Xu, Wentao; Kim, Kwang S; Lee, Tae-Woo

    2016-05-17

    We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3 SO3 H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1) , 80.7 lm W(-1) ) than those with conventional ITO (84.8 cd A(-1) , 73.8 lm W(-1) ). PMID:27072071

  2. Can aliphatic anchoring groups be utilised with dyes for p-type dye sensitized solar cells?

    PubMed

    Hao, Yan; Wood, Christopher J; Clark, Charlotte A; Calladine, James A; Horvath, Raphael; Hanson-Heine, Magnus W D; Sun, Xue-Zhong; Clark, Ian P; Towrie, Michael; George, Michael W; Yang, Xichuan; Sun, Licheng; Gibson, Elizabeth A

    2016-05-01

    A series of novel laterally anchoring tetrahydroquinoline derivatives have been synthesized and investigated for their use in NiO-based p-type dye-sensitized solar cells. The kinetics of charge injection and recombination at the NiO-dye interface for these dyes have been thoroughly investigated using picosecond transient absorption and time-resolved infrared measurements. It was revealed that despite the anchoring unit being electronically decoupled from the dye structure, charge injection occurred on a sub picosecond timescale. However, rapid recombination was also observed due to the close proximity of the electron acceptor on the dyes to the NiO surface, ultimately limiting the performance of the p-DSCs. PMID:27055102

  3. Identification of acceptor states in Li-doped p-type ZnO thin films

    NASA Astrophysics Data System (ADS)

    Zeng, Y. J.; Ye, Z. Z.; Lu, J. G.; Xu, W. Z.; Zhu, L. P.; Zhao, B. H.; Limpijumnong, Sukit

    2006-07-01

    We investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions. Another deeper acceptor state located at 250meV emerges with the increased Li concentration. A broad emission centered at 2.96eV is attributed to a donor-acceptor pair recombination involving zinc vacancy. In addition, two chemical bonding states of Li, evident in x-ray photoelectron spectroscopy, are probably associated with the two acceptor states observed.

  4. Room-temperature ferromagnetism in Li-doped p -type luminescent ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Chawla, Santa; Jayanthi, K.; Kotnala, R. K.

    2009-03-01

    We have observed ferromagnetism in Li-doped ZnO nanorods with Curie temperature up to 554 K. Li forms shallow acceptor states in substitutional zinc sites giving rise to p -type conductivity. An explicit correlation emerges between increase in hole concentration with decrease in magnetization and Curie temperature in ZnO:Li. Occurrence of ferromagnetism at room temperature has been established with observed magnetic domain formation in ZnO:Li pellets in magnetic force microscopy and prominent ferromagnetic resonance signal in electron paramagnetic resonance spectrum. Magnetic ZnO:Li nanorods are luminescent, showing strong near UV emission. Substitutional Li atoms can induce local moments on neighboring oxygen atoms, which when considered in a correlated model for oxygen orbitals with random potentials introduced by dopant atom could explain the observed ferromagnetism and high Curie temperature in ZnO:Li nanorods.

  5. Fabrication of p-type Li-doped ZnO films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Xiao, Bin; Ye, Zhizhen; Zhang, Yinzhu; Zeng, Yujia; Zhu, Liping; Zhao, Binghui

    2006-11-01

    p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li 2CO 3 was used as Li precursor, and the growth temperature was varied from 400 to 600 °C in pure O 2 ambient. The Li-doped ZnO film prepared at 450 °C possessed the lowest resistivity of 34 Ω cm with a Hall mobility of 0.134 cm 2 V -1 s -1 and hole concentration of 1.37 × 10 18 cm -3. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation.

  6. Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures

    SciTech Connect

    Wang, W.L.; Jiang, X.; Taube, K.; Klages, C.

    1997-07-01

    The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and {ital in situ} doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. {copyright} {ital 1997 American Institute of Physics.}

  7. P-type InGaN across the entire alloy composition range

    SciTech Connect

    Wang, K.; Araki, T.; Katsuki, T.; Yu, K. M.; Mayer, M. A.; Ager, J. W. III; Walukiewicz, W.; Alarcon-Llado, E.; Nanishi, Y.

    2013-03-11

    A systematic investigation on Mg doped and undoped InGaN epilayers grown by plasma-assisted molecular beam epitaxy has been conducted. Single phase InGaN alloys across the entire composition range were synthesized and Mg was doped into In{sub x}Ga{sub 1-x}N (0.1 {<=} x {<=} 0.88) epilayers up to {approx}10{sup 20}/cm{sup 3}. Hall effect, thermopower, and electrochemical capacitance voltage experimental results demonstrate the realization of p-type InGaN across the entire alloy composition range for properly Mg doped InGaN. Hole densities have been measured or estimated to be in the lower {approx}10{sup 18}/cm{sup 3} range when the net acceptor concentrations are in the lower {approx}10{sup 19}/cm{sup 3} range across the composition range.

  8. Improved performance of P-type DSCs with a compact blocking layer coated by different thicknesses

    NASA Astrophysics Data System (ADS)

    Ho, Phuong; Bao, Le Quoc; Cheruku, Rajesh; Kim, Jae Hong

    2016-07-01

    The introduction of different thicknesses of a compact NiO blocking layer coating with different spin speeds on FTO and followed by a coating of photoactive NiO electrode for p-type dye-sensitized solar cells (p-DSCs). This study examined the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The DCBZ dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of photovoltaic performance and resulted from an increase in the power conversion efficiency (η). The electrochemical impedance spectroscopy (EIS) measurement demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The results showed that the best p-DSC was achieved by employing 3000 rpm spin-coated process for different times of blocking layer.

  9. Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy

    SciTech Connect

    Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

    2005-01-01

    The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

  10. Scanning electrochemical microscopy investigations of monolayers bound to p-type silicon substrates.

    PubMed

    Ghilane, Jalal; Hauquier, Fanny; Fabre, Bruno; Hapiot, Philippe

    2006-09-01

    p-Si type electrodes modified with different organic monolayers were investigated by reaction with radical anion and cation electrogenerated at a microelectrode operating in the configuration of a scanning electrochemical microscope. The method proves to be a convenient tool for investigating both the quality and the redox properties of the layer as previously demonstrated on metallic electrodes especially when the sample cannot be electrically connected. Approach curves recorded with the different mediators were used to investigate the electron-transfer rates across alkyl monolayers bound to p-type silicon substrates. Preliminary results indicate that the interfacial electron transfer occurs via electron tunneling through the organic layer as generally described for SAMs grafted on gold electrodes. PMID:16944879

  11. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Look, D. C.; Reynolds, D. C.; Litton, C. W.; Jones, R. L.; Eason, D. B.; Cantwell, G.

    2002-09-01

    An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity=4 x101 Omega cm; hole mobility=2 cm2/V s; and hole concentration=9 x1016 cm-3. Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about 1019 cm-3 in the N-doped sample, but only about 1017 cm-3 in the undoped sample.

  12. Reaction sequence and molecular mass of a Cl(-)-translocating P-type ATPase.

    PubMed Central

    Gerencser, G A; Zelezna, B

    1993-01-01

    The basolateral membranes of Aplysia californica foregut absorptive cells contain both Cl(-)-stimulated ATPase and ATP-dependent Cl- transport activities, and each was inhibited by orthovanadate. Both of these orthovanadate-sensitive activities were reconstituted into proteoliposomes. The reaction sequence kinetics were determined by [gamma-32P]ATP-induced phosphorylation of the reconstituted Cl- pump. Rapid phosphorylation and dephosphorylation kinetics of acyl phosphate bonding were confirmed by destabilization of the phosphoprotein by either hydroxylamine or high pH. Mg2+ caused phosphorylation of the enzyme; Cl- caused dephosphorylation. Orthovanadate almost completely inhibited the Mg(2+)-driven phosphorylation reaction. The molecular mass of the catalytic unit (subunit) of the enzyme appeared to be 110 kDa, which is in agreement with molecular masses of all other catalytic units (subunits) of P-type ATPases. Images Fig. 4 Fig. 7 Fig. 8 PMID:8367450

  13. Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors

    PubMed Central

    Larki, Farhad; Dehzangi, Arash; Md Ali, Sawal Hamid; Jalar, Azman; Islam, Md. Shabiul; Hamidon, Mohd Nizar; Majlis, Burhanuddin Yeop

    2014-01-01

    This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. PMID:24743692

  14. Investigations of p-type point contact detectors for the MAJORANA Experiment

    NASA Astrophysics Data System (ADS)

    Bowes, Alyssa

    2014-09-01

    The importance of studying neutrinoless double-beta decays and techniques used to do so are described. The use of germanium detectors to search for such decays is of particular interest because of their high intrinsic energy resolution. Germanium detectors also represent a mature technology, as they have been used extensively in many applications for several decades. The MAJORANA DEMONSTRATOR project uses novel p-type, point-contact (PPC) germanium detectors, enriched to 87% Ge-76, to search for those rare decays. This poster will present the results of a characterization study on the temporal stability of PPC germanium detectors. Any instability could potentially influence the sensitivity to the search for neutrinoless double-beta decays. The importance of studying neutrinoless double-beta decays and techniques used to do so are described. The use of germanium detectors to search for such decays is of particular interest because of their high intrinsic energy resolution. Germanium detectors also represent a mature technology, as they have been used extensively in many applications for several decades. The MAJORANA DEMONSTRATOR project uses novel p-type, point-contact (PPC) germanium detectors, enriched to 87% Ge-76, to search for those rare decays. This poster will present the results of a characterization study on the temporal stability of PPC germanium detectors. Any instability could potentially influence the sensitivity to the search for neutrinoless double-beta decays. We acknowledge support from the Office of Nuclear Physics in the DOE Office of Science, the Particle and Nuclear Astrophysics Program of the National Science Foundation and the Russian Foundation for Basic Research.

  15. HGMS: Glasses and Nanocomposites for Hydrogen Storage.

    SciTech Connect

    Lipinska, Kris; Hemmers, Oliver

    2013-02-17

    The primary goal of this project is to fabricate and investigate different glass systems and glass-derived nanocrystalline composite materials. These glass-based, two-phased materials will contain nanocrystals that can attract hydrogen and be of potential interest as hydrogen storage media. The glass materials with intrinsic void spaces that are able to precipitate functional nanocrystals capable to attract hydrogen are of particular interest. Proposed previously, but never practically implemented, one of promising concepts for storing hydrogen are micro-containers built of glass and shaped into hollow microspheres. The project expanded this concept to the exploration of glass-derived nanocrystalline composites as potential hydrogen storage media. It is known that the most desirable materials for hydrogen storage do not interact chemically with hydrogen and possess a high surface area to host substantial amounts of hydrogen. Glasses are built of disordered networks with ample void spaces that make them permeable to hydrogen even at room temperature. Glass-derived nanocrystalline composites (two-phased materials), combination of glasses (networks with ample voids) and functional nanocrystals (capable to attract hydrogen), appear to be promising candidates for hydrogen storage media. Key advantages of glass materials include simplicity of preparation, flexibility of composition, chemical durability, non-toxicity and mechanical strength, as well as low production costs and environmental friendliness. This project encompasses a fundamental research into physics and chemistry of glasses and nanocrystalline composite materials, derived from glass. Studies are aimed to answer questions essential for considering glass-based materials and composites as potential hydrogen storage media. Of particular interest are two-phased materials that combine glasses with intrinsic voids spaces for physisorption of hydrogen and nanocrystals capable of chemisorption. This project does not

  16. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

    PubMed Central

    Guo, L.; Wang, X. Q.; Zheng, X. T.; Yang, X. L.; Xu, F. J.; Tang, N.; Lu, L. W.; Ge, W. K.; Shen, B.; Dmowski, L. H.; Suski, T.

    2014-01-01

    We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions. PMID:24621830

  17. A P-type ATPase from the aquatic fungus Blastocladiella emersonii similar to animal Na,K-ATPases.

    PubMed

    de Souza, F S; Gomes, S L

    1998-04-01

    We have cloned a P-type ATPase gene from the aquatic fungus Blastocladiella emersonii (BePAT1) using a probe obtained with degenerate oligonucleotides, corresponding to two amino acid sequences highly conserved among all P-type ATPase isoforms, and the polymerase chain reaction technique. Nucleotide sequence analysis revealed a 3.4 kb open reading frame encoding a putative peptide of 1080 amino acid residues with a calculated molecular mass of 119 kDa, which presents all diagnostic features of P-type transporting ATPases. Comparison to other members of the family and phylogenetic analyses have shown that the BePAT1 protein belongs to the subfamily of Na,K- and H,K-ATPases, indicating that the divergence between the alpha-subunit of the Na,K-ATPase and other members of the P-type ATPase family has occurred before the divergence between the animal and fungal lineages in evolution. PMID:9602120

  18. Advances in amorphous and nanocrystalline materials

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryusuke

    2012-10-01

    A new amorphous alloy has been recently introduced which shows a saturation magnetic induction Bs of 1.64 T which is compared with Bs=1.57 T for a currently available Fe-based amorphous alloy and decreased magnetic losses. Such a combination is rare but can be explained in terms of induced magnetic anisotropy being reduced by the alloy's chemistry and its heat treatment. It has been found that the region of magnetization rotation in the new alloy is considerably narrowed, resulting in reduced exciting power in the magnetic devices utilizing the material. Efforts to increase Bs also have been made for nanocrystalline alloys. For example, a nanocrystalline alloy having a composition of Fe80.5Cu1.5Si4B14 shows Bs exceeding 1.8 T. The iron loss at 50 Hz and at 1.6 T induction in a toroidal core of this material is 0.46 W/kg which is 2/3 that of a grain-oriented silicon steel. At 20 kHz/0.2 T excitation, the iron loss is about 60% of that in an Fe-based amorphous alloy which is widely used in power electronics. Another example is a Fe85Si2B8P4Cu1 nanocrystalline alloy with a Bs of 1.8 T, which is reported to exhibit a magnetic core loss of about 0.2 W/kg at 50 Hz and at 1.5 T induction. This article is a review of these new developments and their impacts on energy efficient magnetic devices.

  19. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    PubMed

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure. PMID:27304752

  20. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  1. Simultaneous Formation of Ni/Al Ohmic Contacts to Both n- and p-Type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ito, Kazuhiro; Onishi, Toshitake; Takeda, Hidehisa; Kohama, Kazuyuki; Tsukimoto, Susumu; Konno, Mitsuru; Suzuki, Yuya; Murakami, Masanori

    2008-11-01

    The fabrication procedure for silicon carbide power metal oxide semiconductor field-effect transistors can be improved through simultaneous formation (i.e., using the same contact materials and a one-step annealing process) of ohmic contacts on both the n-source and p-well regions. We have succeeded in the simultaneous formation of Ni/Al ohmic contacts to n- and p-type SiC after annealing at 1000°C for 5 min in an ultrahigh vacuum. Ohmic contacts to n-type SiC were found when the Al-layer thickness was less than about 6 nm, while ohmic contacts to p-type SiC were observed for an Al-layer thickness greater than about 5 nm. Only the contacts with an Al-layer thickness in the range of 5 nm to 6 nm exhibited ohmic behavior to both n- and p-type SiC, with a specific contact resistance of 1.8 × 10-4 Ω cm2 and 1.2 × 10-2 Ω cm2 for n- and p-type SiC, respectively. An about 100-nm-thick contact layer was uniformly formed on the SiC substrate, and polycrystalline δ-Ni2Si(Al) grains were formed at the contact/SiC interface. In the samples that exhibited ohmic behavior to both n- and p-type SiC, the distribution of the Al/Ni ratios in the δ-Ni2Si(Al) grains was larger than that observed for any of the samples that showed ohmic behavior to either n- or p-type SiC. Furthermore, the grain size of the δ-Ni2Si(Al) grains in the samples showing ohmic behavior to both n- and p-type SiC was smaller than the grains in any of the samples that showed ohmic behavior to either n- or p-type SiC. Thus, the large distribution in the Al/Ni ratios and a fine microstructure were found to be characteristic of the ohmic contacts to both n- and p-type SiC. Grains with a low Al concentration correspond to ohmic contacts to n-type SiC, while grains with a high Al concentration correspond to ohmic contacts to p-type SiC.

  2. Cathodic electrodeposition of nanocrystalline titanium dioxide thin films

    SciTech Connect

    Natarajan, C.; Nogami, G.

    1996-05-01

    A new technique for depositing nanocrystalline titanium dioxide thin films on electronically conducting glass was developed. This technique is a two-stage process: (i) cathodic electrodeposition of titanium oxyhydroxide gel film from aqueous solution containing a Ti precursor and (ii) subsequent heat-treatment of this gel film results in the formation of titanium dioxide film. The deposition potential may have a considerable effect on the formation of nanocrystalline film. The nanocrystalline titanium dioxide film shows reversible electrochromism in lithium-ion-containing organic electrolyte. The coloration and bleaching throughout the visible and near-IR range can be switched on and off within a few seconds.

  3. Nanocrystalline cerium oxide materials for solid fuel cell systems

    DOEpatents

    Brinkman, Kyle S

    2015-05-05

    Disclosed are solid fuel cells, including solid oxide fuel cells and PEM fuel cells that include nanocrystalline cerium oxide materials as a component of the fuel cells. A solid oxide fuel cell can include nanocrystalline cerium oxide as a cathode component and microcrystalline cerium oxide as an electrolyte component, which can prevent mechanical failure and interdiffusion common in other fuel cells. A solid oxide fuel cell can also include nanocrystalline cerium oxide in the anode. A PEM fuel cell can include cerium oxide as a catalyst support in the cathode and optionally also in the anode.

  4. Formation of Surface Corrosion-Resistant Nanocrystalline Structures on Steel

    NASA Astrophysics Data System (ADS)

    Nykyforchyn, Hryhoriy; Kyryliv, Volodymyr; Maksymiv, Olha; Slobodyan, Zvenomyra; Tsyrulnyk, Oleksandr

    2016-02-01

    Engineering materials with nanocrystalline structure could be exploited under simultaneous action of mechanical loading and corrosion environments; therefore, their corrosion resistance is important. Surface nanocrystalline structure was generated on middle carbon steels by severe plastic deformation using the method of mechanical pulse friction treatment. This treatment additionally includes high temperature phase transformation and alloying. Using a complex of the corrosive, electrochemical and physical investigations, it was established that nanocrystalline structures can be characterized by lower or increased corrosion resistance in comparison with the reference material. It is caused by the action of two confronting factors: arising energy level and anticorrosive alloying of the surface layer.

  5. On the hardening and softening of nanocrystalline materials

    SciTech Connect

    Fougere, G.E.; Weertman, J.R. . Dept. of Materials Science and Engineering); Siegel, R.W. . Materials Science Div.)

    1993-04-01

    Nanocrystalline Pd and Cu samples have been thermally treated to determine whether the relation between hardness and grain size depend on the method used to vary the grain sizes. Previous reports indicate that hardening with decreasing grain size resulted from data obtained using individual samples, while softening with decreasing grain size resulted from data from a given sample that had been thermally treated. Hardening and softening regimes were evident for the nanocrystalline cu, and the hardness improvements over the original as-consolidated state were maintained throughout the thermal treatments. This review examines our hardness results for Cu and Pd and those for other nanocrystalline materials.

  6. Formation of Surface Corrosion-Resistant Nanocrystalline Structures on Steel.

    PubMed

    Nykyforchyn, Hryhoriy; Kyryliv, Volodymyr; Maksymiv, Olha; Slobodyan, Zvenomyra; Tsyrulnyk, Oleksandr

    2016-12-01

    Engineering materials with nanocrystalline structure could be exploited under simultaneous action of mechanical loading and corrosion environments; therefore, their corrosion resistance is important. Surface nanocrystalline structure was generated on middle carbon steels by severe plastic deformation using the method of mechanical pulse friction treatment. This treatment additionally includes high temperature phase transformation and alloying. Using a complex of the corrosive, electrochemical and physical investigations, it was established that nanocrystalline structures can be characterized by lower or increased corrosion resistance in comparison with the reference material. It is caused by the action of two confronting factors: arising energy level and anticorrosive alloying of the surface layer. PMID:26831689

  7. Functionalized squaraine donors for nanocrystalline organic photovoltaics.

    PubMed

    Wei, Guodan; Xiao, Xin; Wang, Siyi; Sun, Kai; Bergemann, Kevin J; Thompson, Mark E; Forrest, Stephen R

    2012-01-24

    We study a family of functionalized squaraine (fSQ) donors for absorbing in the near-infrared (NIR) and green spectral regions. The NIR-absorbing materials are the symmetric molecules 2,4-bis[4-(N-phenyl-1-naphthylamino)-2,6-dihydroxyphenyl]squaraine (1-NPSQ), 2,4-bis[4-(N,N-diphenylamino)-2,6 dihydroxyphenyl]squaraine, and 2,4-bis[4-(N,N-dipropylamino)-2,6-dihydroxyphenyl]squaraine. The green light absorbing donors are asymmetric squaraines, namely, 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]squaraine and 2-[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]-4-diphenylamino]squaraine. Substitution of the arylamine groups enhances intermolecular packing, thereby increasing hole transport and the possibility of forming extended nanocrystalline junctions when annealed. Nanocrystalline solar cells based on fSQ and a C(60) acceptor have V(oc) = 1.0 V and fill factors 0.73 ± 0.01. Solar cells incorporating annealed 1-NPSQ films result in a power conversion efficiency of 5.7 ± 0.6% at 1 sun, AM1.5G illumination. PMID:22196154

  8. Quasiparticle band structures and thermoelectric transport properties of p-type SnSe

    SciTech Connect

    Shi, Guangsha; Kioupakis, Emmanouil

    2015-02-14

    We used density functional and many-body perturbation theory to calculate the quasiparticle band structures and electronic transport parameters of p-type SnSe both for the low-temperature Pnma and high-temperature Cmcm phases. The Pnma phase has an indirect band gap of 0.829 eV, while the Cmcm has a direct band gap of 0.464 eV. Both phases exhibit multiple local band extrema within an energy range comparable to the thermal energy of carriers from the global extrema. We calculated the electronic transport coefficients as a function of doping concentration and temperature for single-crystal and polycrystalline materials to understand the previous experimental measurements. The electronic transport coefficients are highly anisotropic and are strongly affected by bipolar transport effects at high temperature. Our results indicate that SnSe exhibits optimal thermoelectric performance at high temperature when doped in the 10{sup 19}–10{sup 20 }cm{sup −3} range.

  9. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

    PubMed

    Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

    2016-04-26

    A record high current density of 580 μA/μm is achieved for long-channel, few-layer black phosphorus transistors with scandium contacts after 400 K vacuum annealing. The annealing effectively improves the on-state current and Ion/Ioff ratio by 1 order of magnitude and the subthreshold swing by ∼2.5×, whereas Al2O3 capping significantly degrades transistor performances, resulting in 5× lower on-state current and 3× lower Ion/Ioff ratio. The influences of moisture on black phosphorus metal contacts are elucidated by analyzing the hysteresis of 3-20 nm thick black phosphorus transistors with scandium and gold contacts under different conditions: as-fabricated, after vacuum annealing, and after Al2O3 capping. The optimal black phosphorus film thickness for transistors with scandium contacts is found to be ∼10 nm. Moreover, p-type performance is shown in all transistors with scandium contacts, suggesting that the Fermi level is pinned closer to the valence band regardless of the flake thickness. PMID:27023751

  10. Aluminum-natural oxide-P type silicon /MIS/ solar cells

    NASA Astrophysics Data System (ADS)

    Badura, E.; Zdanowicz, W.

    1980-12-01

    MIS (metal-interfacial region-semiconductor) solar cells are attractive because of their relatively high conversion efficiency. Their performance, however, is strongly affected by device preparation. Two methods are described for preparing Al - natural SiO - p-type Si cells which exhibit high photovoltaic values. The first, involving a 'nonsintered oxide' process, entails etching the active silicon surfaces in HF acid and exposing them to air at room temperature for 48 hours. The second method differs from the first only in that it requires the additional step of sintering the oxidized surfaces in a vacuum at about 500 C. In both cases, a semitransparent Al film is then applied to the oxide, after which an Al grid electrode and 70-nm SiOx antireflection coatings are deposited on the device. Measured against both the nonsintered cell and the Schottky barrier cell, the sintered assembly shows the highest open-circuit voltage (0.46-0.492), the highest fill factor (0.66-0.73), and the most efficient dark parameters.

  11. Observations of exciton and carrier spin relaxation in Be doped p-type GaAs

    SciTech Connect

    Asaka, Naohiro; Harasawa, Ryo; Tackeuchi, Atsushi; Lu, Shulong; Dai, Pan

    2014-03-17

    We have investigated the exciton and carrier spin relaxation in Be-doped p-type GaAs. Time-resolved spin-dependent photoluminescence (PL) measurements revealed spin relaxation behaviors between 10 and 100 K. Two PL peaks were observed at 1.511 eV (peak 1) and 1.497 eV (peak 2) at 10 K, and are attributed to the recombination of excitons bound to neutral Be acceptors (peak 1) and the band-to-acceptor transition (peak 2). The spin relaxation times of both PL peaks were measured to be 1.3–3.1 ns at 10–100 K, and found to originate from common electron spin relaxation. The observed existence of a carrier density dependence of the spin relaxation time at 10–77 K indicates that the Bir-Aronov-Pikus process is the dominant spin relaxation mechanism.

  12. Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy

    NASA Astrophysics Data System (ADS)

    Zamanipour, Zahra; Krasinski, Jerzy S.; Vashaee, Daryoosh

    2013-04-01

    Boron precipitation process and its effect on electronic properties of p-type bulk nanostructured silicon germanium (Si0.8Ge0.2) compared with large grain polycrystalline Si0.8Ge0.2 have been studied. The structures were synthesized and their thermoelectric properties were measured versus temperature during heating and cooling cycles. The experimental data showed stronger temperature variation of Seebeck coefficient, carrier concentration, and conductivity in the nanostructured Si0.8Ge0.2 compared with the polycrystalline form indicating stronger boron precipitation in this structure. The electrical properties of both samples were calculated using a multi-band semi-classical model. The theoretical calculations confirm that the increase of boron precipitation in the nanostructured Si0.8Ge0.2 is responsible for its higher thermal instability. Since the thermoelectric properties of the nanostructured sample degrade as a result of thermal cycling, the material is appropriate only for continuous operation at high temperature without cooling.

  13. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    SciTech Connect

    Inglese, Alessandro Savin, Hele; Lindroos, Jeanette

    2015-08-03

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  14. A tetrahedral coordination of Zinc during transmembrane transport by P-type Zn2+-ATPases

    PubMed Central

    Raimunda, Daniel; Subramanian, Poorna; Stemmler, Timothy; Argüello, José M.

    2012-01-01

    Zn2+ is an essential transition metal required in trace amounts by all living organisms. However, metal excess is cytotoxic and leads to cell damage. Cells rely on transmembrane transporters, with the assistance of other proteins, to establish and maintain Zn2+ homeostasis. Metal coordination during transport is key to specific transport and unidirectional translocation without the backward release of free metal. The coordination details of Zn2+ at the transmembrane metal binding site responsible for transport have now been established. Escherichia coli ZntA is a well-characterized Zn2+-ATPase responsible for intracellular Zn2+ efflux. A truncated form of the protein lacking regulatory metal sites and retaining the transport site was constructed. Metrical parameters of the metal-ligand coordination geometry for the zinc bound isolated form were characterized using x-ray absorption spectroscopy (XAS). Our data support a nearest neighbor ligand environment of (O/N)2S2 that is compatible with the proposed invariant metal coordinating residues present in the transmembrane region. This ligand identification and the calculated bond lengths support a tetrahedral coordination geometry for Zn2+ bound to the TM-MBS of P-type ATPase transporters. PMID:22387457

  15. Shubnikov-de Haas oscillations in n and p type Bi2Se3 flakes

    NASA Astrophysics Data System (ADS)

    Liu, Hongchao; Liu, Shiguang; Yi, Ya; He, Hongtao; Wang, Jiannong

    2015-12-01

    Shubnikov-de Haas (SdH) oscillation, describing the magnetic quantum oscillation in material resistivity at low temperatures, is recently observed in topological insulators and plays an important role in clarifying the existence of topological surface states. Here, we report the SdH oscillations observed in both n and p type Bi2Se3 flake samples. The angle dependent magneto-resistance results reveal the 2D nature of SdH oscillations and the Landau level fan diagrams exhibit π Berry phase. These indicate that the observed SdH oscillations originate from the topological surface states. Moreover, the cyclotron mass, Dingle temperature, Fermi velocity, and other parameters of the systems are deduced from the analysis of temperature dependent SdH oscillations. The obtained Fermi velocities of surface electrons and holes in Bi2Se3 show a good agreement with those found in the typical angle-resolved photoemission spectroscopy experiments. This further confirms that the topological surface electrons/holes are responsible for observed SdH oscillations.

  16. p-type doping of GaAs nanowires using carbon

    NASA Astrophysics Data System (ADS)

    Salehzadeh, O.; Zhang, X.; Gates, B. D.; Kavanagh, K. L.; Watkins, S. P.

    2012-11-01

    We report on the electrical properties of Au-catalyzed C-doped GaAs nanowires (NWs) grown by metal organic vapor phase epitaxy. Transport measurements were carried out using a tungsten nanoprobe inside a scanning electron microscope by contacting to the Au catalyst particle of individual nanowires. The doping level could be varied from approximately (4 ± 1) × 1016 cm-3 to (1.0 ± 0.3) × 1019 cm-3 by varying the molar flow of the gas phase carbon precursor, as well as the group V to group III precursor ratio. It was found that the current transport mechanism switches from generation-recombination to tunnelling field emission by increasing the doping level to 1 × 1019 cm-3. Based on a diameter-dependent analysis of the apparent resistivity of the C-doped NWs, we propose that C incorporates into GaAs NWs through the triple boundary at the Au/NW interface. The p-type conductivity of the C-doped NWs was inferred by observing a rectification at negative bias (applied to the Au electrode) and confirmed by back-gating measurements performed on field effect transistor devices.

  17. p-type doping of MoS{sub 2} thin films using Nb

    SciTech Connect

    Laskar, Masihhur R.; Nath, Digbijoy N.; Lee, Edwin W.; Lee, Choong Hee; Yang, Zihao; Ma, Lu; Wu, Yiying; Kent, Thomas; Mishra, Rohan; Roldan, Manuel A.; Idrobo, Juan-Carlos; Pantelides, Sokrates T.; Pennycook, Stephen J.; Myers, Roberto C.; Rajan, Siddharth

    2014-03-03

    We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

  18. Nonpolar a-plane p-type GaN and p-n Junction Diodes

    SciTech Connect

    Chakraborty, Arpan; Xing, H.; Craven, M.D.; Keller, S.; Mates, T.; Speck, J.S.; Baars, S.P. den; Mishra, U.K.

    2004-10-15

    Growth and electrical characteristics of Mg-doped p-type nonpolar (1120) a-plane GaN films, grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition, were investigated as a function of growth rate, the ammonia to trimethylgallium flow ratio (V/III ratio), and the growth temperature. The electrical conductivity of the films exhibited a strong dependence on the growth parameters. Secondary-ion-mass-spectroscopy measurements indicated that more Mg was incorporated at higher growth rate and at lower growth temperatures. The Mg concentration in the films increased linearly with the Mg flow. A maximum hole concentration of 6.8x10{sup 17}cm{sup -3} was achieved at room temperature for a Mg concentration of 7.6x10{sup 19}cm{sup -3}, corresponding to 0.9% ionization. Further increase in the Mg concentration resulted in increased surface roughness as well as a significant decrease in the hole concentration. p-n junction diodes were fabricated using nonpolar a-plane GaN, and the current-voltage characteristics of these diodes showed a sharp turn-on at {approx}3 V.

  19. Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic

    SciTech Connect

    Verreck, Devin Groeseneken, Guido; Verhulst, Anne S.; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Sorée, Bart

    2014-12-15

    Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In{sub 0.53}Ga{sub 0.47}As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design.

  20. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  1. SIM Lite Detection of Habitable Planets in P-Type Binary-Planetary Systems

    NASA Technical Reports Server (NTRS)

    Pan, Xiaopei; Shao, Michael; Shaklan, Stuart; Goullioud, Renaud

    2010-01-01

    Close binary stars like spectroscopic binaries create a completely different environment than single stars for the evolution of a protoplanetary disk. Dynamical interactions between one star and protoplanets in such systems provide more challenges for theorists to model giant planet migration and formation of multiple planets. For habitable planets the majority of host stars are in binary star systems. So far only a small amount of Jupiter-size planets have been discovered in binary stars, whose minimum separations are 20 AU and the median value is about 1000 AU (because of difficulties in radial velocity measurements). The SIM Lite mission, a space-based astrometric observatory, has a unique capability to detect habitable planets in binary star systems. This work analyzed responses of the optical system to the field stop for companion stars and demonstrated that SIM Lite can observe exoplanets in visual binaries with small angular separations. In particular we investigated the issues for the search for terrestrial planets in P-type binary-planetary systems, where the planets move around both stars in a relatively distant orbit.

  2. SIM-Lite detection of habitable planets in P-type binary-planetary systems

    NASA Astrophysics Data System (ADS)

    Pan, Xiaopei; Shao, Michael; Shaklan, Stuart; Goullioud, Renaud

    2010-07-01

    Close binary stars like spectroscopic binaries create a completely different environment than single stars for the evolution of a protoplanetary disk. Dynamical interactions between one star and protoplanets in such systems provide more challenges for theorists to model giant planet migration and formation of multiple planets. For habitable planets the majority of host stars are in binary star systems. So far only a small amount of Jupiter-size planets have been discovered in binary stars, whose minimum separations are 20 AU and the median value is about 1000 AU (because of difficulties in radial velocity measurements). The SIM Lite mission, a space-based astrometric observatory, has a unique capability to detect habitable planets in binary star systems. This work analyzed responses of the optical system to the field stop for companion stars and demonstrated that SIM Lite can observe exoplanets in visual binaries with small angular separations. In particular we investigated the issues for the search for terrestrial planets in P-type binary-planetary systems, where the planets move around both stars in a relatively distant orbit.

  3. Towards P-Type Conductivity in SnO2 Nanocrystals through Li Doping

    SciTech Connect

    Chaparadza, Allen; Rananavare, Shankar B

    2010-01-22

    This paper examines electrical transport properties and Li doping in SnO2 synthesized by the sol–gel method. Solid-state 7Li-NMR lineshapes reveal that Li ions occupy two distinct sites with differing dynamic mobilities. The chemical exchange rate between the two sites is, however, too slow for detection on the NMR timescale. Compressed nanoparticulate films of this doped semiconductor exhibit a positive Seebeck coefficient implying a p-type conductivity. A variable-temperature direct current conductivity, over a 25–350 °C temperature range, follows an Efros–Shklovskii variable range hopping (ES-VRH) conduction mechanism (ln(ρ) versus T -1/2) at temperatures below 100 °C with a crossover to 2D Mott variable range hopping (M-VRH) (ln(ρ) versus T -1/3) conduction at temperatures above 250 °C. In a transition region between these two limiting behaviors, the dc resistivity exhibits an anomalous temperature-independent plateau. We suggest that its origin may lie in a carrier inversion phenomenon wherein the majority carriers switch from holes to electrons due to Li ion expulsion from the crystalline core and creation of oxygen vacancies generated by loss of oxygen at elevated temperatures.

  4. Near Field Enhanced Photocurrent Generation in P-type Dye-Sensitized Solar Cells

    PubMed Central

    Xu, Xiaobao; Cui, Jin; Han, Junbo; Zhang, Junpei; Zhang, Yibo; Luan, Lin; Alemu, Getachew; Wang, Zhong; Shen, Yan; Xiong, Dehua; Chen, Wei; Wei, Zhanhua; Yang, Shihe; Hu, Bin; Cheng, Yibing; Wang, Mingkui

    2014-01-01

    Over the past few decades, the field of p-type dye-sensitized solar cell (p-DSSC) devices has undergone tremendous advances, in which Cu-based delafossite nanocrystal is of prime interest. This paper presents an augment of about 87% improvement in photocurrent observed in a particular configuration of organic dye P1 sensitized CuCrO2 delafossite nanocrystal electrode coupled with organic redox shuttle, 1-methy-1H- tetrazole-5-thiolate and its disulfide dimer when Au nanoparticles (NPs, with diameter of about 20 nm) is added into the photocathode, achieving a power convert efficiency of 0.31% (measured under standard AM 1.5 G test conditions). Detailed investigation shows that the local electrical-magnetic field effect, induced by Au NPs among the mesoporous CuCrO2 film, can improve the charge injection efficiency at dye/semiconductor interface, which is responsible for the bulk of the gain in photocurrent. PMID:24492539

  5. On the recombination behaviour of iron in moderately boron-doped p-type silicon

    NASA Astrophysics Data System (ADS)

    Walz, D.; Joly, J.-P.; Kamarinos, G.

    1996-04-01

    The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level at E v +0.1 eV and the donor level of FeB pairs at E c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014 1016 cm-3 supposing the E c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

  6. Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Vivona, M.; Greco, G.; Lo Nigro, R.; Bongiorno, C.; Roccaforte, F.

    2015-07-01

    In this work, the morphological, structural, and electrical properties of Ti/Al/W contacts to p-type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing temperature (800-1100 °C). The increase of the annealing temperature induces a transition from a rectifying to an Ohmic behavior, with a specific contact resistance of 5.8 × 10-4 Ωcm2. The electrical behavior has been correlated with the morphological and structural analyses. In particular, the transition to an Ohmic behavior was accompanied by a gradual increase of the surface roughness and by the occurrence of a reaction leading to the formation of new phases in the stack and at the interface (TiAl3, W(SiAl)2, and TiC). The presence of Al-rich protrusions penetrating in the SiC substrate was also observed. From the temperature dependence of the electrical parameters, a barrier height of 0.69 eV for this system was determined. The thermal stability of the contacts has been demonstrated for long-term (up to 100 h) thermal cycling at 400 °C.

  7. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  8. Optical and electrical properties of p-type Li-doped ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Sáaedi, Abdolhossein; Yousefi, Ramin; Jamali-Sheini, Farid; Cheraghizade, Mohsen; Khorsand Zak, A.; Huang, Nay Ming

    2013-09-01

    Undoped and Li-doped ZnO nanowires were grown on Si(1 1 1) substrates using a thermal evaporation method. Undoped and Li-doped ZnO nanoparticles, which were prepared using a sol-gel method, were used as material sources to grow the undoped and Li-doped ZnO nanowires, respectively. X-ray diffraction patterns clearly indicated hexagonal structures for all of the products. The nanowires were completely straight, with non-aligned arrays, and were tapered. Field emission Auger spectrometer indicated lithium element in the nanowires structures. Photoluminescence (PL) studies showed lower optical properties for the Li-doped ZnO nanowires compared to the undoped ZnO nanowires. Furthermore, the UV peak of the Li-doped ZnO nanowires was red-shifted compared to the undoped ZnO nanowires. Two probe method results proved that the Li-doped ZnO nanowires exhibited p-type properties.

  9. Neganov-Luke Phonon Amplification in P-type Point Contact Detectors

    NASA Astrophysics Data System (ADS)

    Mirabolfathi, N.; Amman, M.; Faiez, D.; Luke, P. N.; Martin, R. D.; Rolla, J. A.; Sadoulet, B.; Serfass, B.; Vetter, K.

    2014-08-01

    The Cryogenic Dark Matter Search (CDMS) detectors measure ionization and athermal phonons in high purity germanium crystals to discriminate between nuclear recoils from dark matter candidates and radioactive backgrounds. In order to reach lower energy detection thresholds, the CDMSlite experiment operates the CDMS detectors with a larger voltage bias to increase the signal-to-noise ratio using the Neganov-Luke effect. Breakdown in those detectors was observed at fields of order 30 V/cm, but the reason for the breakdown is unknown. It is unclear if the breakdowns are due to surface leakage current, impact ionization in the bulk of the crystals, or some other effect due to the very low operating temperatures of the detectors. Germanium detectors used in gamma spectroscopy at 77 K are regularly operated with fields in excess of 1,000 V/cm. In order to understand the origin of breakdown in the CDMS detectors, a P-type Point Contact detector was equipped with transition edge phonon thermistors and operated at a base temperature of 30 mK. The linearity of the Neganov-Luke phonon amplification was studied and no sign of breakdown for biases up to 400 V was observed. This excludes impact ionization on neutral impurity states as the primary cause of the breakdown observed in the CDMSLite detectors. This demonstrates that the Neganov-Luke phonon amplification is a viable method for lowering the energy threshold in germanium detectors of masses of order 1 kg.

  10. High performance p-type NiOx thin-film transistor by Sn doping

    NASA Astrophysics Data System (ADS)

    Lin, Tengda; Li, Xiuling; Jang, Jin

    2016-06-01

    Major obstacles towards power efficient complementary electronics employing oxide thin-film transistors (TFTs) lie in the lack of equivalent well performing p-channel devices. Here, we report a significant performance enhancement of solution-processed p-type nickel oxide (NiOx) TFTs by introducing Sn dopant. The Sn-doped NiOx (Sn-NiOx) TFTs annealed at 280 °C demonstrate substantially improved electrical performances with the increase in the on/off current ratio (Ion/Ioff) by ˜100 times, field-effect mobility (μlin) by ˜3 times, and the decrease in subthreshold swing by half, comparing with those of pristine NiOx TFTs. X-ray photoelectron spectroscopy and X-ray diffraction results confirm that Sn atoms tend to substitute Ni sites and induce more amorphous phase. A decrease in density of states in the gap of NiOx by Sn doping and the shift of Fermi level (EF) into the midgap lead to the improvements of TFT performances. As a result, Sn-NiOx can be a promising material for the next-generation, oxide-based electronics.

  11. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    PubMed

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. PMID:25835032

  12. Hydrogen production

    NASA Technical Reports Server (NTRS)

    England, C.; Chirivella, J. E.; Fujita, T.; Jeffe, R. E.; Lawson, D.; Manvi, R.

    1975-01-01

    The state of hydrogen production technology is evaluated. Specific areas discussed include: hydrogen production fossil fuels; coal gasification processes; electrolysis of water; thermochemical production of hydrogen; production of hydrogen by solar energy; and biological production of hydrogen. Supply options are considered along with costs of hydrogen production.

  13. Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

    SciTech Connect

    Myers, M. A.; Jian, J.; Khranovskyy, V.; Lee, J. H.; Wang, Han; Wang, Haiyan E-mail: hwang00@tamu.edu

    2015-08-14

    Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition. Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 °C and 750 °C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n- and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

  14. Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

    SciTech Connect

    Ma, Y.; Gao, Q.; Wu, G.G.; Li, W.C.; Gao, F.B.; Yin, J.Z.; Zhang, B.L.; Du, G.T.

    2013-03-15

    Highlight: ► P-type As-doped ZnO thin films was fabricated by MOCVD after post-growth annealing. ► The formation mechanism of p-ZnO with high hole concentration above 10{sup 19} cm{sup −3} was elucidated. ► Besides As{sub Zn}–2V{sub Zn} complex, C impurities also played an important role in realizing p-ZnO. ► The formations of As{sub O} and O-C-O complex were partially contributed to the p-type ZnO: As films. - Abstract: As-doped p-type ZnO thin films were fabricated by metal organic chemical vapor deposition (MOCVD) after in situ annealing in a vacuum. The p-type conduction mechanism was suggested by the analysis of X-ray photoelectron spectroscopy and ultraviolet photoemission spectroscopy. It was found that most of the As dopants in p-ZnO thin films formed As{sub Zn}–2V{sub Zn} shallow acceptor complex, simultaneously, carbon impurities also played an important role in realizing p-type conductivity in ZnO. Substitutional carbon on oxygen site created passivated defect bands by combining with Ga atoms due to the donor-acceptor pair Coulomb binding, which shifted the valence-band maximum upwards for ZnO and thus increased the hole concentration.

  15. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes

    PubMed Central

    Ferguson, David J. P.; Kaindama, Mbinda L.; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S.; Wheatley, Sally P.; Yamano, Hiroyuki; Holder, Anthony A.; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-01-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei. PMID:26565797

  16. P-type point contact germanium detectors and their application in rare-event searches

    NASA Astrophysics Data System (ADS)

    Giovanetti, Graham Kurt

    In the last two decades, experimental results from the direct detection of solar, reactor, and atmospheric neutrinos have provided convincing evidence that neutrinos have mass, the first definitive evidence of physics beyond the Standard Model. The existence of massive neutrinos opens many questions about the neutrino's intrinsic properties, including the absolute mass, the relative hierarchy of the neutrino mass states, and the Majorana or Dirac nature of the neutrino. The Majorana Demonstrator is an array of p-type point contact (PPC) high purity germanium detectors that will search for the neutrinoless double-beta decay (0nubetabeta) of 76Ge, a process that can only occur if the neutrino is a Majorana particle. PPC detectors have several characteristics that make them well suited for a 76Ge 0nubetabeta search, including sub-keV energy thresholds that allow for background rejection based on low-energy x-ray tagging. This feature makes the Majorana Demonstrator sensitive to signals that might be present from processes that are not in the current Standard Model of particle physics. The Majorana Low-background Broad Energy Germanium Detector at KURF (MALBEK) is a PPC detector operated at the Kimballton Underground Research Facility (KURF) in Ripplemead, VA. MALBEK was used to test the stability and performance of PPC detectors and study sources of background near the detector energy threshold. It was found that the dominant background below 1 keV in MALBEK data is due to slow surface events, a class of signals originating from interactions that occur near the detector surface. Techniques were developed for identifying surface events and simulating their formation and distribution. These techniques were then applied to 89.5 kg-d of data and searches were performed for signals from weakly interacting massive particles (WIMPs), solar axions, and Pauli exclusion principle violating electron transitions. No evidence of a signal was found. These results are presented in

  17. Structure and mechanism of Zn2+-transporting P-type ATPases

    PubMed Central

    Wang, Kaituo; Sitsel, Oleg; Meloni, Gabriele; Autzen, Henriette Elisabeth; Andersson, Magnus; Klymchuk, Tetyana; Nielsen, Anna Marie; Rees, Douglas C.; Nissen, Poul; Gourdon, Pontus

    2014-01-01

    Zinc is an essential micronutrient for all living organisms, required for signaling and proper function of a range of proteins involved in e.g. DNA-binding and enzymatic catalysis1. In prokaryotes and photosynthetic eukaryotes Zn2+-transporting P-type ATPases of class IB (ZntA) are crucial for cellular redistribution and detoxification of Zn2+ and related elements2,3. Here we present crystal structures representing the phosphoenzyme ground state (E2P) and a dephosphorylation intermediate (E2.Pi) of ZntA from Shigella sonnei, determined at 3.2 and 2.7 Å resolution, respectively. The structures reveal a similar fold as the Cu+-ATPases with an amphipathic helix at the membrane interface. A conserved electronegative funnel connects this region to the intramembranous high-affinity ion-binding site and may promote specific uptake of cellular Zn2+ ions. The E2P structure displays a wide extracellular release pathway reaching the invariant residues at the high-affinity site, including Cys392, Cys394 and Asp714. The pathway closes in the E2.Pi state where Asp714 interacts with the conserved Lys693, which possibly stimulates Zn2+ release as a built-in counter-ion, as also proposed for H+-ATPases. Indeed, transport studies in liposomes provide experimental support for ZntA activity without counter-transport. These findings suggest a mechanistic link between PIB-type Zn2+-ATPases and PIII-type H+-ATPases, and show at the same time structural features of the extracellular release pathway that resemble the PII-type ATPases such as the sarco(endo)plasmic reticulum Ca2+-ATPase4,5 (SERCA) and Na+,K+-ATPase6. PMID:25132545

  18. Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.

    PubMed

    Kang, Dong-Ho; Shim, Jaewoo; Jang, Sung Kyu; Jeon, Jeaho; Jeon, Min Hwan; Yeom, Geun Young; Jung, Woo-Shik; Jang, Yun Hee; Lee, Sungjoo; Park, Jin-Hong

    2015-02-24

    Despite heightened interest in 2D transition-metal dichalcogenide (TMD) doping methods for future layered semiconductor devices, most doping research is currently limited to molybdenum disulfide (MoS2), which is generally used for n-channel 2D transistors. In addition, previously reported TMD doping techniques result in only high-level doping concentrations (degenerate) in which TMD materials behave as near-metallic layers. Here, we demonstrate a controllable nondegenerate p-type doping (p-doping) technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of octadecyltrichlorosilane (OTS). This p-doping phenomenon originates from the methyl (-CH3) functional groups in OTS, which exhibit a positive pole and consequently reduce the electron carrier density in WSe2. The controlled p-doping levels are between 2.1 × 10(11) and 5.2 × 10(11) cm(-2) in the nondegenerate regime, where the performance parameters of WSe2-based electronic and optoelectronic devices can be properly designed or optimized (threshold voltage↑, on-/off-currents↑, field-effect mobility↑, photoresponsivity↓, and detectivity↓ as the doping level increases). The p-doping effect provided by OTS is sustained in ambient air for a long time showing small changes in the device performance (18-34% loss of ΔVTH initially achieved by OTS doping for 60 h). Furthermore, performance degradation is almost completely recovered by additional thermal annealing at 120 °C. Through Raman spectroscopy and electrical/optical measurements, we have also confirmed that the OTS doping phenomenon is independent of the thickness of the WSe2 films. We expect that our controllable p-doping method will make it possible to successfully integrate future layered semiconductor devices. PMID:25629805

  19. Invariant Functional Forms for K(r,P) Type Equations of State for Hydrodynamically Driven Flow

    NASA Astrophysics Data System (ADS)

    Hrbek, George

    2001-06-01

    At the 11th American Physical Society Topical Group Meeting on Shock Compression of Condensed Matter, Group Theoretic Methods, as defined by Lie were applied to the problem of temperature independent, hydrodynamic shock in a Birch-Murnaghan continuum. (1) Group parameter ratios were linked to the physical quantities (i.e., KT, K'T, and K''T) specified for the various order Birch-Murnaghan approximations. This technique has now been generalized to provide a mathematical formalism applicable to a wide class of forms (i.e., K(r,P)) for the equation of state. Variations in material expansion and resistance (i.e., counter pressure) are shown to be functions of compression and material variation ahead of the expanding front. Illustrative examples include the Birch-Murnaghan, Vinet, Brennan-Stacey, Shanker, Tait, Poirier, and Jones-Wilkins-Lee (JWL) forms. The results of this study will allow the various equations of state, and their respective fitting coefficients, to be compared with experiments. To do this, one must introduce the group ratios into a numerical simulation for the flow and generate the density, pressure, and particle velocity profiles as the shock moves through the material. (2) (1) Hrbek, G. M., Invariant Functional Forms For The Second, Third, And Fourth Order Birch-Murnaghan Equation of State For Materials Subject to Hydrodynamic Shock, Proceedings of the 11th American Physical Society Topical Group Meeting on Shock Compression of Condensed Matter (SCCM Shock 99), Snowbird, Utah (2) Hrbek, G. M., Physical Interpretation of Mathematically Invariant K(r,P) Type Equations Of State For Hydrodynamically Driven Flows, Submitted to the 12th American Physical Society Topical Group Meeting on Shock Compression of Condensed Matter (SCCM Shock 01), Atlanta, Georgia

  20. Plasmodium P-Type Cyclin CYC3 Modulates Endomitotic Growth during Oocyst Development in Mosquitoes.

    PubMed

    Roques, Magali; Wall, Richard J; Douglass, Alexander P; Ramaprasad, Abhinay; Ferguson, David J P; Kaindama, Mbinda L; Brusini, Lorenzo; Joshi, Nimitray; Rchiad, Zineb; Brady, Declan; Guttery, David S; Wheatley, Sally P; Yamano, Hiroyuki; Holder, Anthony A; Pain, Arnab; Wickstead, Bill; Tewari, Rita

    2015-11-01

    Cell-cycle progression and cell division in eukaryotes are governed in part by the cyclin family and their regulation of cyclin-dependent kinases (CDKs). Cyclins are very well characterised in model systems such as yeast and human cells, but surprisingly little is known about their number and role in Plasmodium, the unicellular protozoan parasite that causes malaria. Malaria parasite cell division and proliferation differs from that of many eukaryotes. During its life cycle it undergoes two types of mitosis: endomitosis in asexual stages and an extremely rapid mitotic process during male gametogenesis. Both schizogony (producing merozoites) in host liver and red blood cells, and sporogony (producing sporozoites) in the mosquito vector, are endomitotic with repeated nuclear replication, without chromosome condensation, before cell division. The role of specific cyclins during Plasmodium cell proliferation was unknown. We show here that the Plasmodium genome contains only three cyclin genes, representing an unusual repertoire of cyclin classes. Expression and reverse genetic analyses of the single Plant (P)-type cyclin, CYC3, in the rodent malaria parasite, Plasmodium berghei, revealed a cytoplasmic and nuclear location of the GFP-tagged protein throughout the lifecycle. Deletion of cyc3 resulted in defects in size, number and growth of oocysts, with abnormalities in budding and sporozoite formation. Furthermore, global transcript analysis of the cyc3-deleted and wild type parasites at gametocyte and ookinete stages identified differentially expressed genes required for signalling, invasion and oocyst development. Collectively these data suggest that cyc3 modulates oocyst endomitotic development in Plasmodium berghei. PMID:26565797

  1. Preliminary exploration of the interfacial structure of nanocrystalline materials

    SciTech Connect

    Guo, W.Q.; Liu, X.D.; Ding, B.Z.

    1995-12-31

    The present intense interest in exploration on nanostructured materials stems from the studies of interfacial structures of nanocrystalline materials. Up to now, there are two different results of the exploration on interfacial structure of nanocrystalline materials. The first one supposed by Gleiter et al. is a so-called {open_quotes}gas-like{close_quotes} structure. They reported that the interfaces of nanocrystalline materials represent a novel type of solid structure without any long or short range order, corresponding structurally to a {open_quotes}gas-like{close_quotes} solid. This structure can be verified with X-ray diffraction, Mossbauer spectroscopy, positron lifetime spectroscopy and extended X-ray absorption fine structure (EXFAS). The second result obtained by Siegel et al. with high resolution electron microscopy, raman scattering and small angle X-ray and neutron diffraction is that the interfacial structures of nanocrystalline materials are rather similar to those in conventional coarse-grained polycrystals.

  2. Corrosion properties of nanocrystalline cobalt and cobalt-phosphorus alloys

    NASA Astrophysics Data System (ADS)

    Jung, Hundal

    In this thesis, the corrosion properties of electrodeposited nanocrystalline Co and Co-1.1 and 2.1 wt% P alloys (7 to 20 nm grain size) were investigated in a wide range of solution pH by using polarization and electrochemical impedance spectroscopy techniques along with scanning electron microscopy, energy dispersive X-ray spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy analysis. In 0.1 M H2SO 4 and 0.5 M Na2SO4 solutions (pH 1 and 3, respectively), nanocrystalline Co showed higher anodic and cathodic reaction rates and reduced localized corrosion attack compared to coarse grained Co counterparts. An enhanced electrochemical reaction rate of nanocrystalline Co was correlated to a significant increase in grain boundaries and triple junctions. For pure Co, a catalytic mechanism has been suggested to rationalize a more favorable route for their anodic dissolution reaction. An addition of P leads to a significant increase of corrosion resistance of nanocrystalline Co-P due to the increased elemental P concentration on the corroded surface at Eoc following an initial selective dissolution of Co. However, at higher anodic overpotential, the superior corrosion resistance of nanocrystalline Co-P did not last due to the formation of a porous and defective surface film. The excellent corrosion resistance of nanocrystalline Co-P deteriorated from heat treatment at 350°C and 800°C due to higher chemical heterogeneity. In a 3.56% NaCl solution at pH 6.2, nanocrystalline Co-P showed a higher anodic dissolution rate than that of nanocrystalline Co due to a reduced adsorption area of chloride ions. However, the corrosion rate of nanocrystalline Co-P decreased in comparison to nanocrystalline Co due to a much smaller cathodic exchange current density for oxygen reduction on nanocrystalline Co-P. A physical model was elaborated to explain the different response of annealed nanocrystalline Co-P by considering the different adsorption properties

  3. High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

    NASA Technical Reports Server (NTRS)

    Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

    2013-01-01

    A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

  4. Effect of acidity on the glycine-nitrate combustion synthesis of nanocrystalline alumina powder

    SciTech Connect

    Peng Tianyou . E-mail: typeng@whu.edu.cn; Liu Xun; Dai Ke; Xiao Jiangrong; Song Haibo

    2006-09-14

    Nanocrystalline alumina powders were prepared by combustion synthesis using glycine as fuel and nitrate as an oxidizer. The effect of the pH values in the precursor solutions on crystallite sizes, surface areas and morphologies of the synthesized alumina powder has been investigated by X-ray diffractometry, thermal analysis, nitrogen adsorption-desorption, and transmission electron microscopy. With decreasing the pH values in the precursor solutions, the obtained materials could be modified from segregated nanoparticles (pH 10.5) to aggregates of nanoparticles (pH 6.0), and finally to a flaky morphology (pH 2.5). The rates of decomposition, the interaction of coordination as well as the hydrogen bonding of the glycine and the Al-hydroxides species at different pH values were found to be responsible for the generation of flake and/or segregated nanoparticles during auto-ignition reactions. The as-prepared combustion ashes were converted into pure nanocrystalline alumina after calcination at elevated temperatures. The specific surface areas of the products calcined at 800 deg. C ranged from 96 to 39 m{sup 2}/g with the pH decreased from 10.5 to 2.5.

  5. Effect of Water Vapor Adsorption on Electrical Properties of Carbon Nanotube/Nanocrystalline Cellulose Composites.

    PubMed

    Safari, Salman; van de Ven, Theo G M

    2016-04-13

    It has been long known that the electrical properties of cellulose are greatly influenced by adsorption of water vapor. Incorporating conductive nanofillers in a cellulose matrix is an example of an approach to tailor their characteristics for use in electronics and sensing devices. In this work, we introduce two new nanocomposites comprising carbon nanotubes (CNTs) and conventional or electrosterically stabilized nanocrystalline celluloses matrices. While conventional nanocrystalline cellulose (NCC) consists of a rigid crystalline backbone, electrosterically stabilized cellulose (ENCC) is composed of a rigid crystalline backbone with carboxylated polymers protruding from both ends. By tuning CNT loading, we can tailor a CNT/NCC composite with minimal electrical sensitivity to the ambient relative humidity, despite the fact that the composite has a high moisture uptake. The expected decrease in CNT conductivity upon water vapor adsorption, due to electron donation, is counterbalanced by an increase in the conductivity of NCC due to proton hopping at an optimum CNT loading (1-2%). Contrary to the CNT/NCC composite, a CNT/ENCC composite at 1% CNT loading shows insulating behavior for relative humidities up to 75%, after which the composite becomes conductive. This interesting behavior can be ascribed to the low moisture uptake of ENCC at low and moderate relative humidities due to the limited number of hydroxyl groups and hydrogen bond formation between carboxyl groups on ENCC, which endow ENCC with limited water molecule adsorption sites. PMID:26998641

  6. Application of nanocrystalline metals in microsystem fabrication

    NASA Astrophysics Data System (ADS)

    Baghbanan, Mohammadreza

    This research addresses the issues of performance variability and reliability concerns frequently encountered with conventional metallic microsystem components (e.g. MEMS) produced by electrodeposition methods such as LIGA. Previous studies have demonstrated that microsystem components produced by conventional electrodeposition approaches show relatively low overall hardness and considerable variations in Young's modulus and hardness throughout the cross-section of the components. In this work, this undesirable property variability has been traced back to microstructural and scaling effects. It has been shown that the microstructure of conventional deposits exhibits grain size gradients resulting from a fine grained to columnar structure transition with increasing component thickness. In addition, the overall component size is often comparable to the relatively large grain size in these deposits. In past efforts, both post-deposition recrystallization annealing and texture control during the electroplating process have been used in efforts to alleviate these concerns, however only with some limited success. In this research, a new approach is used which essentially involves the application of an electrodeposition process that produces fully dense nanostructured deposits throughout the entire cross-section of the component without the transition from fine to large grained columnar structure. The cross-sectional microstructures and mechanical properties (i.e. hardness and Young's modulus) are presented for electrodeposited nickel and cobalt foils with conventional polycrystalline and nanocrystalline structures as well as nanocrystalline nickel plated in molds with non-conductive side-walls prepared by the UV-photolithography molding process. Microstructural characterization was performed on these materials using scanning electron microscopy (SEM), optical microscopy, back scattered electron imaging (BSEI), and transmission electron microscopy (TEM) as well as

  7. Supra- and nanocrystallinities: a new scientific adventure.

    PubMed

    Pileni, M P

    2011-12-21

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices.The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young's modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals.Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process.At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface.Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed. They

  8. Supra- and nanocrystallinities: a new scientific adventure

    NASA Astrophysics Data System (ADS)

    Pileni, M. P.

    2011-12-01

    Nanomaterials exist in the interstellar medium, in biology, in art and also metallurgy. Assemblies of nanomaterials were observed in the early solar system as well as silicate particle opals. The latter exhibits unusual optical properties directly dependent on particle ordering in 3D superlattices. The optical properties of noble metal nanoparticles (Ag, Au and Cu) change with the ordering of atoms in the nanocrystals, called nanocrystallinity. The vibrational properties related to nanocrystallinity markedly differ with the vibrational modes studied. Hence, a drastic effect on nanocrystallinity is observed on the confined acoustic vibrational property of the fundamental quadrupolar modes whereas the breathing acoustic modes remain quasi-unchanged. The mechanical properties characterized by the Young’s modulus of multiply twinned particle (MTP) films are markedly lower than those of single nanocrystals. Two fcc supracrystal growth mechanisms, supported by simulation, of Au nanocrystals are proposed: heterogeneous and homogeneous growth processes. The final morphology of nanocrystal assemblies, with either films by layer-by-layer growth characterized by their plastic deformation or well-defined shapes grown in solution, depends on the solvent used to disperse the nanocrystals before the evaporation process. At thermodynamic equilibrium, two simultaneous supracrystal growth processes of Au nanocrystals take place in solution and at the air-liquid interface. These growth processes are rationalized by simulation. They involve, on the one hand, van der Waals interactions and, on the other hand, the attractive interaction between nanocrystals and the interface. Ag nanocrystals (5 nm) self-order in colloidal crystals with various arrangements called supracrystallinities. As in bulk materials, phase diagrams of supracrystals with structural transitions from face-centered-cubic (fcc) to hexagonal-close-packed (hcp) and body-centered-cubic (bcc) structures are observed

  9. Luminescence and related properties of nanocrystalline porous silicon

    NASA Astrophysics Data System (ADS)

    Koshida, N.

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures based on group IV semiconductors. It discusses luminescence and related properties of nanocrystalline porous silicon. Topics include an overview of nanostructured silicon, its fabrication technology, and properties of nanocrystalline porous silicon such as confinement effects, photoluminescence, electroluminesce, carrier charging effects, ballistic transport and emission, and thermally induced acoustic emission.

  10. Investigation of Ohmic mechanism for chlorine-treated p-type GaN using x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Chen, Po-Sung; Lee, Ching-Ting

    2006-08-01

    To investigate the function and mechanism of oxidation, the surface of the chlorine-treated p-type GaN semiconductor was analyzed using x-ray photoelectron spectroscopy. The chlorinated surface treatment was performed by electrolyzing HCl chemical solution to generate HClO, which in turn could be used to oxidize the p-type GaN. The chlorinated surface treatment enhances the formation of GaOx on the GaN surface and removing GaOx layer from the surface thereafter leads to the creation of additional Ga vacancies. Consequently, more holes are generated as a result of the generated Ga vacancies. Therefore, a relatively higher Ohmic performance with a specific contact resistance of 6.1×10-6Ωcm2 can be obtained for Ni /Au metal contact subsequently patterned on the chlorine-treated p-type GaN via the enhanced formation of GaOx.

  11. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    SciTech Connect

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen; Long, Yun-Ze; Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  12. P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yokoyama, Haruki; Hoshi, Takuya

    2015-01-01

    The electrical characteristics of Si-doped GaAsSb layers grown at various growth temperatures from 530 to 630 °C by metalorganic chemical vapor deposition (MOCVD), are investigated. When the substrate temperature is 530 °C, the conductivity of Si-doped GaAsSb layers is n-type. In contrast, Si-doped GaAsSb layers grown at higher temperature (580 °C) show p-type conductivity. Moreover, the p-type carrier concentration in these layers increases proportionally to the increase of the disilane (Si2H6) flow rate. This is the first time that p-type doping into GaAsSb layers has been achieved by MOCVD using Si as a dopant.

  13. High temperature deformation behavior of a nanocrystalline titanium aluminide

    SciTech Connect

    Mishra, R.S.; Mukherjee, A.K.; Mukhopadhyay, D.K.; Suryanarayana, C.; Froes, F.H.

    1996-06-01

    Gamma titanium intermetallic alloys are potentially attractive for elevated temperature applications. The room temperature ductility and fracture toughness have been improved considerably by the addition of ternary and quaternary elements. The synthesis of nanocrystalline materials has provided further avenues for possible improvement in the mechanical properties. The exciting prospect of low temperature superplasticity in nanocrystalline materials has been discussed. Recently, nanocrystalline {gamma}-TiAl alloys have been synthesized by hot isostatic pressing (HIP) of mechanically alloyed (MA) Ti-47.5 Al-3 Cr (at.%) powders. The purpose of this study was to evaluate the possibility of observing low temperature superplasticity in this nanocrystalline alloy. By determining the stress exponent for flow, it should be possible to comment on the micromechanism of deformation in a nanocrystalline intermetallic alloy. A number of studies have shown that superplasticity is possible in {gamma}-TiAl alloys and it is important to establish whether the scaling law extends to nanocrystalline {gamma}-TiAl regime or the flow behavior changes.

  14. Toughness and strength of nanocrystalline graphene.

    PubMed

    Shekhawat, Ashivni; Ritchie, Robert O

    2016-01-01

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects--grain boundaries and grain-boundary triple junctions--that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with 'weakest-link' statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials. PMID:26817712

  15. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  16. Stabilizing Nanocrystalline Grains in Ceramic-Oxides

    SciTech Connect

    Aidhy, Dilpuneet S; Zhang, Yanwen; Weber, William J

    2013-01-01

    Nanocrystalline ceramic-oxides are prone to grain growth rendering their highly attractive properties practically unusable. Using atomistic simulations ofon ceria as a model material system, we elucidate a framework to design dopant-pinned grain boundaries that prevent this grain growth. While in metallic systems it has been shown that a large mismatch between host and dopant atomic size prevents grain growth, in ceramic-oxides we find that this concept is not applicable. Instead, we find that dopant-oxygen vacancy interaction, i.e., dopant migration energy in the presence of oxygen vacancy, and dopant-oxygen vacancy binding energy are the controlling factors in grain growth. Our prediction agrees with and explains previous experimental observations.

  17. Toughness and strength of nanocrystalline graphene

    DOE PAGESBeta

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-28

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link’ statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidatemore » the nanoscale origins of the grain-size dependence of its strength and toughness. Lastly, our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials.« less

  18. Toughness and strength of nanocrystalline graphene

    PubMed Central

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-01

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link' statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials. PMID:26817712

  19. Nanocrystalline diamond coatings for mechanical seals applications.

    PubMed

    Santos, J A; Neto, V F; Ruch, D; Grácio, J

    2012-08-01

    A mechanical seal is a type of seal used in rotating equipment, such as pumps and compressors. It consists of a mechanism that assists the connection of the rotating shaft to the housings of the equipments, preventing leakage or avoiding contamination. A common cause of failure of these devices is end face wear out, thus the use of a hard, smooth and wear resistant coating such as nanocrystalline diamond would be of great importance to improve their working performance and increase their lifetime. In this paper, different diamond coatings were deposited by the HFCVD process, using different deposition conditions. Additionally, the as-grown films were characterized for, quality, morphology and microstructure using scanning electron microscopy (SEM) and Raman spectroscopy. The topography and the roughness of the films were characterized by atomic force microscopy (AFM). PMID:22962831

  20. Thermal Conductivity in Nanocrystalline Ceria Thin Films

    SciTech Connect

    Marat Khafizov; In-Wook Park; Aleksandr Chernatynskiy; Lingfeng He; Jianliang Lin; John J. Moore; David Swank; Thomas Lillo; Simon R. Phillpot; Anter El-Azab; David H. Hurley

    2014-02-01

    The thermal conductivity of nanocrystalline ceria films grown by unbalanced magnetron sputtering is determined as a function of temperature using laser-based modulated thermoreflectance. The films exhibit significantly reduced conductivity compared with stoichiometric bulk CeO2. A variety of microstructure imaging techniques including X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron analysis, and electron energy loss spectroscopy indicate that the thermal conductivity is influenced by grain boundaries, dislocations, and oxygen vacancies. The temperature dependence of the thermal conductivity is analyzed using an analytical solution of the Boltzmann transport equation. The conclusion of this study is that oxygen vacancies pose a smaller impediment to thermal transport when they segregate along grain boundaries.

  1. Toughness and strength of nanocrystalline graphene

    NASA Astrophysics Data System (ADS)

    Shekhawat, Ashivni; Ritchie, Robert O.

    2016-01-01

    Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects--grain boundaries and grain-boundary triple junctions--that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with `weakest-link' statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials.

  2. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  3. Perovskite Sr-Doped LaCrO3 as a New p-Type Transparent Conducting Oxide.

    PubMed

    Zhang, Kelvin H L; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F J; Bowden, Mark E; Shutthanandan, Vaithiyalingam; Sushko, Peter V; Chambers, Scott A

    2015-09-16

    Epitaxial La1-x Srx CrO3 deposited on SrTiO3 (001) is shown to be a p-type transparent conducting oxide with competitive figures of merit and a cubic perovskite structure, facilitating integration into oxide electronics. Holes in the Cr 3d t2g bands play a critical role in enhancing p-type conductivity, while transparency to visible light is maintained because low-lying d-d transitions arising from hole doping are dipole forbidden. PMID:26248327

  4. Studies on electrochemically constructed n- and p-type photoelectrodes for use in solar energy conversion

    NASA Astrophysics Data System (ADS)

    Kang, Donghyeon

    Among several pathways to harvest solar energy, solar water splitting is one of the most efficient methods to convert solar light to hydrogen, which is a clean and easy to store chemical that has the potential to be used as a fuel source. Solar water splitting can be achieved primarily by photoelectrochemical cells (PECs), which utilize semiconductors as photoelectrodes for the water splitting reaction. Photoelectrodes play the crucial role of generating hydrogen but, to date, very few photoelectrodes have been developed that can produce hydrogen in a stable and efficient manner. Thus, development and modification of efficient, stable photoelectrodes are highly desirable to improve performance of solar water splitting PECs. This dissertation demonstrates the development of semiconductors as photoelectrodes and their modifications to advance solar energy conversion performance by newly established electrochemical synthetic routes. To improve the photoelectrochemical performance of photoelectrodes, various strategies were introduced, such as, morphology control, extrinsic doping, and the integration of catalysts. After successfully demonstrating the electrochemical synthesis of photoelectrodes, photoelectrochemical and electrochemical properties of electrodeposited photoelectrodes in PECs are discussed. The chapters can be categorized into three major themes. The first theme is the preparation of Bi-based photoanodes for the water oxidation reaction. Chapter 2 presents a study of Mo-doping into the BiVO4 photoanode to enhance charge separation properties. After Mo-doping was achieved successfully, a FeOOH oxygen evoltuion catalyst was integrated into the Mo-doped BiVO 4 photoanode to increase the water oxidation performance. Chapter 3 introduces another electrochemical synthesis method to control the morphology of Bi-based oxide photoanode materials. The second theme of this dissertation is the preparation of photocathode materials for the water reduction reaction

  5. Nanocrystallized Cu2Se grown on electroless Cu coated p-type Si using electrochemical atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Lu; He, Wenya; Chen, Xiang-yu; Du, Yi; Zhang, Xin; Shen, Yehua; Yang, Fengchun

    2015-01-01

    Cuprous selenide (Cu2Se) nanocrystalline thin films are grown onto electroless Cu coating on p-Si (100) substrates using electrochemical atomic layer deposition (EC-ALD), which includes alternate electrodeposition of Cu and Se atomic layers. The obtained films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM), FTIR, and open-circuit potential (OCP) studies. The results show the higher quality and good photoelectric properties of the Cu2Se film, suggesting that the combination of electroless coating and EC-ALD is an ideal method for deposition of compound semiconductor films on p-Si.

  6. C-H activation of ethers by pyridine tethered PCsp3P-type iridium complexes.

    PubMed

    Cui, Peng; Babbini, Dominic C; Iluc, Vlad M

    2016-06-14

    Iridium PCsp3P complexes featuring a novel bis(2-diphenylphosphinophenyl)-2-pyridylmethane ligand (PC(Py)HP) are reported. C-H activation reactions between the dihydride complex [(PC(Py)P)Ir(H)2] and tetrahydrofuran or methyl tert-butyl ether in the presence of a hydrogen acceptor, norbornene (NBE), at ambient temperature led exclusively to the hydrido oxyalkyl complexes, [(PC(Py)P)IrH(C4H7O)] and [(PC(Py)P)IrH(CH2O(t)Bu)], respectively. The internal pyridine donor is important and stabilizes these species by coordination to the iridium center. The coordination of pyridine to the iridium center is labile, however, and its dissociation occurs in the presence of a suitable substrate, as demonstrated by the intramolecular nucleophilic attack of pyridine on a vinylidene intermediate generated from PhC[triple bond, length as m-dash]CH. PMID:27052422

  7. An Unusual Low-Density Supernova Graphite Grain with a Nanocrystalline Core

    NASA Astrophysics Data System (ADS)

    Groopman, E.; Bernatowicz, T.; Zinner, E.

    2013-09-01

    We have discovered a unique supernova graphite grain containing a nanocrystalline core. Electron diffraction studies of the core show evidence for stacked graphene sheets, previously unobserved in other nanocrystalline cores.

  8. Furfural resin-based bio-nanocomposites reinforced by reactive nanocrystalline cellulose

    NASA Astrophysics Data System (ADS)

    Wang, C.; Sun, S.; Zhao, G.; He, B.; Xiao, H.

    2009-07-01

    The work presented herein has been focused on reinforcing the furfural resins (FA) by reactive-modified nanocrystalline cellulose (NCC) in an attempt to create a bio-nanocomposite completely based on natural resources. FA prepolymers were synthesized with an acid catalyst, and NCC was rendered reactive via the grafting of maleic anhydride (MAH). The resulting NCC and nanocomposites were characterized using TEM, SEM and FT-IR. It was found that NCC appeared to be spherical in shape with diameters under 100 nm. FT-IR confirmed that there were hydrogen and esterification bonding between MAH and NCC or FA prepolymer. After solidified with paratoluenesulfonic acid, NCC-reinforced FA resin composites showed granular cross-section while FA resin with layered structures. Mechanical property tests indicated that NCC-reinforced FA resin composites possessed the improved tensile and flexural strengths, in comparison with FA resin.

  9. Structural order effect in visible photoluminescence properties of nanocrystalline Si :H thin films

    NASA Astrophysics Data System (ADS)

    Chen, H.; Shen, W. Z.; Wei, W. S.

    2006-03-01

    We report room-temperature visible photoluminescence (PL) properties of highly ordered hydrogenated nanocrystalline Si(nc-Si :H) with good electrical performance. The PL profiles can be well reproduced by the model of Islam and Kumar [J. Appl. Phys. 93, 1753 (2003)], incorporating the effects of quantum confinement and localized surface states, as well as a log-normal crystallite size distribution. Raman, PL, and electrical results consistently reveal that improvement of structural order within nc-Si :H is beneficial to enhance the PL efficiency. Owing to adequate order, strong visible PL and high electron mobility can coexist in nc-Si :H, which may provide possibilities in Si-based optoelectronics.

  10. Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride

    SciTech Connect

    Sennikov, P. G. Golubev, S. V.; Shashkin, V. I.; Pryakhin, D. A.; Drozdov, M. N.; Andreev, B. A.; Drozdov, Yu. N.; Kuznetsov, A. S.; Pohl, H.-J.

    2009-07-15

    The data on fabrication of silicon layers on various substrates by plasma enhanced chemical vapor deposition from the (silicon tetrafluoride)-hydrogen system are reported. The emission spectra of the plasma in the system are recorded. The samples were studied by the X-ray diffraction and secondary ion mass spectrometry techniques. The morphologic properties of the surface are examined, and the Raman spectra, the transmittance spectra in the infrared region, and photoluminescence spectra are recorded. The phase composition of the layers corresponds to nanocrystalline silicon, in which the dimensions of coherent-scattering grains vary with the conditions of the preparation process in the range from 3 to 9 nm. The layers exhibit intense photoluminescence at room temperature.

  11. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    SciTech Connect

    Liu, Jianlin

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  12. Mechanism for doping induced p type C60 using thermally evaporated molybdenum trioxide (MoO3) as a dopant

    NASA Astrophysics Data System (ADS)

    Yang, Jin-Peng; Wang, Wen-Qing; Cheng, Li-Wen; Li, Yan-Qing; Tang, Jian-Xin; Kera, Satoshi; Ueno, Nobuo; Zeng, Xiang-hua

    2016-05-01

    Thermally evaporated molybdenum trioxide (MoO3) doped C60 films, which could change n type features of pristine C60 to form a p type mixed C60 layer, are investigated by x-ray and ultraviolet photoelectron spectroscopy. It is found that C60 HOMO progressively shifts closer to the Fermi level after increased MoO3 doping concentration, and final onset of C60 HOMO is pinned at binding energy of 0.20 eV, indicating the formation of p type C60 films. It is proposed that in charge transfer induced p type C60 formation, due to large electron affinity of MoO3 (6.37 eV), electrons from HOMO of C60 could easily transfer to MoO3 to form cations and therefore increase hole concentration, which could gradually push C60 HOMO to the Fermi level and finally form p type C60 films. Moreover, clear different types of C60 species have been confirmed from UPS spectra in highly doped films.

  13. Mechanism for doping induced p type C60 using thermally evaporated molybdenum trioxide (MoO3) as a dopant.

    PubMed

    Yang, Jin-Peng; Wang, Wen-Qing; Cheng, Li-Wen; Li, Yan-Qing; Tang, Jian-Xin; Kera, Satoshi; Ueno, Nobuo; Zeng, Xiang-Hua

    2016-05-11

    Thermally evaporated molybdenum trioxide (MoO3) doped C60 films, which could change n type features of pristine C60 to form a p type mixed C60 layer, are investigated by x-ray and ultraviolet photoelectron spectroscopy. It is found that C60 HOMO progressively shifts closer to the Fermi level after increased MoO3 doping concentration, and final onset of C60 HOMO is pinned at binding energy of 0.20 eV, indicating the formation of p type C60 films. It is proposed that in charge transfer induced p type C60 formation, due to large electron affinity of MoO3 (6.37 eV), electrons from HOMO of C60 could easily transfer to MoO3 to form cations and therefore increase hole concentration, which could gradually push C60 HOMO to the Fermi level and finally form p type C60 films. Moreover, clear different types of C60 species have been confirmed from UPS spectra in highly doped films. PMID:27058225

  14. Optical and electronic properties of delafossite CuBO{sub 2}p-type transparent conducting oxide

    SciTech Connect

    Ruttanapun, Chesta E-mail: krchesta@kmitl.ac.th

    2013-09-21

    CuBO{sub 2} delafossite was prepared by solid state reaction and calcined/sintered at 1005 °C. The optical properties of this p-type transparent conducting oxide were investigated. Its crystal structure, morphology, composition, oxygen decomposition, and optical and electronic properties were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, thermal gravimetric analysis (TGA), ultraviolet-visible-near-infrared (UV-VIS-NIR) and fluorescence spectroscopies, Seebeck coefficient, and electrical conductivity measurements. CuBO{sub 2} delafossite possesses a hexagonal space group R3{sup ¯}m. TGA indicated a weight loss of 10%, which was attributed to excess oxygen. The positive Seebeck coefficient confirmed p-type behavior. Emission at 355 nm indicated a direct band type transition, and the UV-VIS-NIR spectrum indicated an optical direct gap of 3.6 eV. Activation energies for carrier production and electrical conduction were 0.147 and 0.58 eV, respectively, indicating the thermal activation of carriers. CuBO{sub 2} delafossite is a p-type transparent conducting oxide with a wide band gap and may have potential in industrial p-type electrodes.

  15. Characterization of p-type wide band gap transparent oxide for heterojunction devices

    NASA Astrophysics Data System (ADS)

    Lim, Sang-Hyun

    Transparent p-type CuCr1-xMgxO2 wide band gap oxide semiconductor thin films were deposited over quartz substrates by chemical spray pyrolysis technique using metalloorganic precursors. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation, and reaction between constituent oxides in the spray deposition process is presented. Crystalline single phase CuCrO2 delafossite structure was dominant in ≥700ºC argon ambient annealed films but the as-deposited films contained spinel CuCr2O4 mixed phases as shown by XRD and XPS studies. Spin-orbital energy ˜9.8eV in Cr 2p electron spectra consistent with Cr3+ valence state and Cr 2p3/2 resolved peaks show mixed valence state on Cr4+ /Cr6+ confirming CuCr1-xMgxO 2 compound phase in the films. Effect of substrate temperature, film thickness, and acceptor Mg2+ doping on crystallographic structure, optical, electrical conductivity and thermoelectric coefficient was investigated. The invariance of the alpha- and increase of the c-lattice parameter with Mg concentration suggests that Mg2+ ions are introduced at the Cr3+ site. Highly transparent ≥80% CuCr 0.93Mg0.07O2 films with direct and indirect optical band gaps 3.08 and 2.58eV for 155 nm and 3.14 and 2.79eV for 305nm thin films, respectively were obtained. Photoluminescence emission bands at 532 and 484nm interpreted to arise from 3d94s1 and 3d 10 Cu+ intra-band transitions. Electrical conductivity of CuCr0.93Mg0.07O 2 films ranged from 0.6-1.0 Scm-1 and exhibits activation energies ˜0.11eV in 300-420K and ˜0.23eV in ≥ 420K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Restricted by the Mg solubility, the substituted Mg dopants limited to x≤0.05 are only able to contribute to the optimum hole carrier in the range ˜2-4x1019cm-3 and thus no substantial increase of electrical conductivity could be realized with increased Mg concentration. A major fraction of Mg atoms do not act as

  16. Hydrogen sensor

    DOEpatents

    Duan, Yixiang; Jia, Quanxi; Cao, Wenqing

    2010-11-23

    A hydrogen sensor for detecting/quantitating hydrogen and hydrogen isotopes includes a sampling line and a microplasma generator that excites hydrogen from a gas sample and produces light emission from excited hydrogen. A power supply provides power to the microplasma generator, and a spectrometer generates an emission spectrum from the light emission. A programmable computer is adapted for determining whether or not the gas sample includes hydrogen, and for quantitating the amount of hydrogen and/or hydrogen isotopes are present in the gas sample.

  17. Direct-Coated Photoconducting Nanocrystalline PbS Thin Films with Tunable Band Gap

    NASA Astrophysics Data System (ADS)

    Vankhade, Dhaval; Kothari, Anjana; Chaudhuri, Tapas K.

    2016-06-01

    Nanocrystalline PbS thin films are deposited on glass by direct coating from a precursor solution of lead acetate and thiourea in methanol. A single coating has a thickness of 50 nm and greater thicknesses are obtained from layer by layer deposition. The films are smooth and shiny with roughness (rms) of about 1.5 nm. X-ray diffraction studies show that films are cubic PbS with crystallite size about 10 nm. The films are p-type with dark electrical conductivities in the range of 0.4-0.5 S/cm. These films are basically photoconducting. Photoconductivity monotonically increases with increase in thickness. The band gap of the films strongly depends on the thickness of the films. The band gap decreases from 2.4 eV to 1.6 eV as the thickness is increased from 50 nm to 450 nm. The tunability of the band gap is useful for technical applications, such as solar cells and photodetectors.

  18. Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

    SciTech Connect

    Wiora, M; Bruehne, K; Floeter, A; Gluche, P; Willey, T M; Kucheyev, S O; Van Buuren, A W; Hamza, A V; Biener, J; Fecht, H

    2008-08-01

    Nanocrystalline diamond (NCD) films with a thickness of {approx}6 {micro}m and with average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized with the goal to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp{sup 2}-bonded carbon and hydrogen impurities are low, and showed a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp{sup 2} carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, and both stiffness and hardness decrease with decreasing grain size. These trends suggest gradual changes of the nature of the grain boundaries, from graphitic in the case of the 60 nm grain size material to hydrogen terminated sp{sup 3} carbon for the 9 nm grain size material. The films exhibit low levels of internal stress and freestanding structures with a length of several centimeters could be fabricated without noticeable bending.

  19. Hydrogen Generation by Solar Photolysis of Water

    NASA Astrophysics Data System (ADS)

    Graetzel, Michael

    2004-03-01

    Prospects of near term fuel cell applications for transportation and communication have stimulated recently great interest in systems that can generate hydrogen through water cleavage by sunlight. A device that appears very promising to accomplish this goal is a tandem cell based on two superimposed photoactive layers [1]. The top layer consists of nanocrystalline oxide film absorbing the blue part of the solar spectrum and producing oxygen from water under light excitation. This is placed directly on top of a dye-sensitized nanocrystalline TiO2 film (DSC) capturing the green and red part of the solar spectrum. The voltage generated by this second photosystem enables hydrogen production to proceed without application of an external electric bias. The overall reaction corresponds to the splitting of water into hydrogen and oxygen by visible light. The maximum conversion efficiency achieved so far with these systems is about 6-7 electrode a nanocrystalline WO3 film. The use of nanoparticles for the top layer has several great advantages. They are translucent avoiding losses by light scattering and their small size is within the minority carrier diffusion length, allowing the valence band hole reaction with water at the particle surface to proceed with high efficiency. Recent work has focused on replacing the WO3 by semiconductor oxide absorbing a larger fraction of visible light than tungsten trioxide, e.g. Fe2O3.The principles and current state of this research will be briefly reviewed. Literature 1. M. Graetzel, "Photoelectrochemical Cells" Nature, 414, 332-344 (2001)

  20. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-05-01

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite.

  1. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes.

    PubMed

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-01-01

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite. PMID:27185503

  2. Synergistic strengthening effect of nanocrystalline copper reinforced with carbon nanotubes

    PubMed Central

    Wang, Hu; Zhang, Zhao-Hui; Hu, Zheng-Yang; Wang, Fu-Chi; Li, Sheng-Lin; Korznikov, Elena; Zhao, Xiu-Chen; Liu, Ying; Liu, Zhen-Feng; Kang, Zhe

    2016-01-01

    In this study, a novel multi-walled carbon nanotubes reinforced nanocrystalline copper matrix composite with super high strength and moderate plasticity was synthesized. We successfully overcome the agglomeration problem of the carbon nanotubes and the grain growth problem of the nanocrystalline copper matrix by combined use of the electroless deposition and spark plasma sintering methods. The yield strength of the composite reach up to 692 MPa, which is increased by 2 and 5 times comparing with those of the nanocrystalline and coarse copper, respectively. Simultaneously, the plasticity of the composite was also significantly increased in contrast with that of the nanocrystalline copper. The increase of the density of the carbon nanotubes after coating, the isolation effect caused by the copper coating, and the improvement of the compatibility between the reinforcements and matrix as well as the effective control of the grain growth of the copper matrix all contribute to improving the mechanical properties of the composite. In addition, a new strengthening mechanism, i.e., the series-connection effect of the nanocrystalline copper grains introduced by carbon nanotubes, is proposed to further explain the mechanical behavior of the nanocomposite. PMID:27185503

  3. Hydrogenation apparatus

    DOEpatents

    Friedman, Joseph [Encino, CA; Oberg, Carl L [Canoga Park, CA; Russell, Larry H [Agoura, CA

    1981-01-01

    Hydrogenation reaction apparatus comprising a housing having walls which define a reaction zone and conduits for introducing streams of hydrogen and oxygen into the reaction zone, the oxygen being introduced into a central portion of the hydrogen stream to maintain a boundary layer of hydrogen along the walls of the reaction zone. A portion of the hydrogen and all of the oxygen react to produce a heated gas stream having a temperature within the range of from 1100.degree. to 1900.degree. C., while the boundary layer of hydrogen maintains the wall temperature at a substantially lower temperature. The heated gas stream is introduced into a hydrogenation reaction zone and provides the source of heat and hydrogen for a hydrogenation reaction. There also is provided means for quenching the products of the hydrogenation reaction. The present invention is particularly suitable for the hydrogenation of low-value solid carbonaceous materials to provide high yields of more valuable liquid and gaseous products.

  4. Nanocrystalline particle coatings on alpha-alumina powders by a carbonate precipitation and thermal-assisted combustion route.

    PubMed

    Kim, Sang Woo; Jung, Young Mi

    2007-11-01

    We have suggested ultrafine particle coating processes for preparing nanocrystalline particle coated alpha-alumina powders by a carbonate precipitation and thermal-assisted combustion route, which is environmentally friendly. The nanometric ammonium aluminum carbonate hydroxide (AACH) as a precursor for coating of alumina was produced from precipitation reaction of ammonium aluminum sulfate and ammonium hydrogen carbonate. The synthetic crystalline size and morphology were greatly dependent on pH and temperature. By adding ammonium aluminum sulfate solution dispersed the alpha-alumina core particle in the ammonium hydrogen carbonate aqueous solution, nanometric AACH with a size of 5 nm was tightly bonded and uniformly coated on the core powder due to formation of surface complexes by the adsorption of carbonates, hydroxyl and ammonia groups on the surface of aluminum oxide. The synthetic precursor rapidly converted to amorphous- and y-alumina phase without significant change in the morphological features through decomposition of surface complexes and thermal-assisted phase transformation. As a result, the nanocrystalline polymorphic particle coated alpha-alumina core powders with highly uniform distribution were prepared from the route of carbonate precipitation and thermal-assisted combustion. PMID:18047085

  5. Electronic structure and thermoelectric properties of n - and p -type SnSe from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Kutorasinski, K.; Wiendlocha, B.; Kaprzyk, S.; Tobola, J.

    2015-05-01

    We present results of the electronic band structure, Fermi surface, and electron transport property calculations in the orthorhombic n - and p -type SnSe, applying the Korringa-Kohn-Rostoker method and the Boltzmann transport approach. The analysis accounted for the temperature effect on crystallographic parameters in P n m a structure as well as the phase transition to C m C m structure at Tc˜807 K. Remarkable modifications of the conduction and valence bands were noticed upon varying crystallographic parameters within the structure before Tc, while the phase transition mostly leads to the jump in the band-gap value. The diagonal components of the kinetic parameter tensors (velocity, effective mass) and resulting transport quantity tensors [electrical conductivity σ , thermopower S , and power factor (PF)] were computed for a wide range of temperature (15-900 K) and hole (p -type) and electron (n -type) concentrations (1017-1021cm-3 ). SnSe is shown to have a strong anisotropy of the electron transport properties for both types of charge conductivity, as expected for the layered structure, with the generally heavier p -type effective masses compared to n -type ones. Interestingly, p -type SnSe has strongly nonparabolic dispersion relations, with the "pudding-mold-like" shape of the highest valence band. The analysis of σ ,S , and PF tensors indicates that the interlayer electron transport is beneficial for thermoelectric performance in n -type SnSe, while this direction is blocked in p -type SnSe, where in-plane transport is preferred. Our results predict that n -type SnSe is potentially even better thermoelectric material than p -type SnSe. Theoretical results are compared with the single-crystal p -SnSe measurements, and good agreement is found below 600 K. The discrepancy between the computational and experimental data, appearing at higher temperatures, can be explained assuming an increase of the hole concentration versus T , which is correlated with the

  6. Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

    NASA Astrophysics Data System (ADS)

    Tsujikawa, Shimpei; Shiga, Katsuya; Umeda, Hiroshi; Yugami, Jiro

    2007-01-01

    The breakdown mechanism of ultrathin SiON gate dielectrics in p-type metal oxide semiconductor field effect transistors having p+gates (p+gate-pMOSFETs) has been studied. Systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFET in inversion mode, gate dielectric breakdown under stress voltage lower than -4 V is driven by oxide voltage (Vox) or oxide field (Eox), while the breakdown under stress voltage higher than -4 V is driven by gate voltage (Vg). The Vox/Eox-driven breakdown observed under low stress voltage is quite important to the reliability of low-voltage complementary metal oxide semiconductor (CMOS). By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to same mechanism as the negative bias temperature instability (NBTI), namely the interfacial hydrogen release driven by Eox, has been shown to be possible. However, direct tunneling of holes driven by Vox has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be Vox or Eox.

  7. Crystallization, structure and dynamics of the proton-translocating P-type ATPase.

    PubMed

    Scarborough, G A

    2000-01-01

    Large single three-dimensional crystals of the dodecylmaltoside complex of the Neurospora crassa plasma membrane H(+)-ATPase (H(+) P-ATPase) can be grown in polyethylene-glycol-containing solutions optimized for moderate supersaturation of both the protein surfaces and detergent micellar region. Large two-dimensional H(+) P-ATPase crystals also grow on the surface of such mixtures and on carbon films located at such surfaces. Electron crystallographic analysis of the two-dimensional crystals grown on carbon films has recently elucidated the structure of the H(+) P-ATPase at a resolution of 0.8 nm in the membrane plane. The two-dimensional crystals comprise two offset layers of ring-shaped ATPase hexamers with their exocytoplasmic surfaces face to face. Side-to-side interactions between the cytoplasmic regions of the hexamers in each layer can be seen, and an interaction between identical exocytoplasmic loops in opposing hexamer layers holds the two layers together. Detergent rings around the membrane-embedded region of the hexamers are clearly visible, and detergent-detergent interactions between the rings are also apparent. The crystal packing forces thus comprise both protein-protein and detergent-detergent interactions, supporting the validity of the original crystallization strategy. Ten transmembrane helices in each ATPase monomer are well-defined in the structure map. They are all relatively straight, closely packed, moderately tilted at various angles with respect to a plane normal to the membrane surface and average approximately 3.5 nm in length. The transmembrane helix region is connected in at least three places to the larger cytoplasmic region, which comprises several discrete domains separated by relatively wide, deep clefts. Previous work has shown that the H(+) P-ATPase undergoes substantial conformational changes during its catalytic cycle that are not changes in secondary structure. Importantly, the results of hydrogen/deuterium exchange

  8. A nearly pure monoclinic nanocrystalline zirconia

    SciTech Connect

    Guo Gongyi . E-mail: guo_gongyi@hotmail.com; Chen Yuli

    2005-05-15

    Generally, monoclinic zirconia is considered to be much more difficult to prepare at low temperatures and particularly in a pure state. The present work is the first example that shows that the hydrous zirconia formed by precipitation can yield a nearly pure nanocrystalline monoclinic zirconia at a temperature as low as 320 deg. C. The crystallite size of the monoclinic zirconia produced in the present work is around 15nm, and it does not change appreciably as calcination temperature is increased from 320 to or above 400 deg. C. Such a small monoclinic crystallite arises from some of the chemical and physical factors built into the solution-gelation-xerogel process such as acidic preparation-pH, rapid precipitation, and moderate aging time and drying temperature, which result in a structure different from those of the existing zirconium hydroxides. In addition, the hydrous zirconia exhibits a unique thermal behavior in two respects: first, a sudden weight drop in the region of exothermic peak of the thermogravimetric curve is seen, suggesting that the main decomposition of the hydrous zirconia occurs in this region; second, there is an endothermic peak at high temperature in the differential thermal analysis curve, indicating the presence of coordinated water in the hydrous zirconia.

  9. Nanocrystalline films for gas-reactive applications

    DOEpatents

    Eastman, Jeffrey A.; Thompson, Loren J.

    2004-02-17

    A gas sensor for detection of oxidizing and reducing gases, including O.sub.2, CO.sub.2, CO, and H.sub.2, monitors the partial pressure of a gas to be detected by measuring the temperature rise of an oxide-thin-film-coated metallic line in response to an applied electrical current. For a fixed input power, the temperature rise of the metallic line is inversely proportional to the thermal conductivity of the oxide coating. The oxide coating contains multi-valent cation species that change their valence, and hence the oxygen stoichiometry of the coating, in response to changes in the partial pressure of the detected gas. Since the thermal conductivity of the coating is dependent on its oxygen stoichiometry, the temperature rise of the metallic line depends on the partial pressure of the detected gas. Nanocrystalline (<100 nm grain size) oxide coatings yield faster sensor response times than conventional larger-grained coatings due to faster oxygen diffusion along grain boundaries rather than through grain interiors.

  10. Rare earths in nanocrystalline glass ceramics

    NASA Astrophysics Data System (ADS)

    Lahoz, F.; Martín, I. R.; Rodríguez-Mendoza, U. R.; Iparraguirre, I.; Azkargorta, J.; Mendioroz, A.; Balda, R.; Fernández, J.; Lavín, V.

    2005-10-01

    The optical spectroscopic analysis of rare earth ions in transparent oxyfluoride glass-ceramics obtained from SiO2-Al2O3-PbF2-CdF2 based precursor glasses is presented. The oscillator strengths of the optical transitions were measured from the absorption spectra of glasses and glass-ceramics doped with rare earth ions. The results were analysed in the framework of the Judd-Ofelt theory giving the values of the three Ω2, Ω4 and Ω6 intensity parameters over the rare earth series. On the other hand, high efficient infrared-to-blue upconversion has been observed in Tm3+-Yb3+ codoped glass and glass-ceramic compared to the Tm3+ single doped matrices. The contributions to the upconversion process of the rare earth ions in the nanocrystalline and in the vitreous phase of the glass-ceramics have been distinguished. Finally, laser action in Nd3+-doped glass-ceramic has been studied. Losses due to UV and visible upconverted emissions inside the laser cavity have been also estimated.

  11. Characterisation of Suspension Precipitated Nanocrystalline Hydroxyapatite Powders

    NASA Astrophysics Data System (ADS)

    Mallik, P. K.; Swain, P. K.; Patnaik, S. C.

    2016-02-01

    Hydroxyapatite (HA) is a well-known biomaterial for coating on femoral implants, filling of dental cavity and scaffold for tissue replacement. Hydroxyapatite possess limited load bearing capacity due to their brittleness. In this paper, the synthesis of nanocrystalline hydroxyapatite powders was prepared by dissolving calcium oxide in phosphoric acid, followed by addition of ammonia liquor in a beaker. The prepared solution was stirred by using magnetic stirrer operated at temperature of 80°C for an hour. This leads to the formation of hydroxyapatite precipitate. The precipitate was dried in oven for overnight at 100°C. The dried agglomerated precipitate was calcined at 800°C in conventional furnace for an hour. The influence of calcium oxide concentration and pH on the resulting precipitates was studied using BET, XRD and SEM. As result, a well-defined sub-rounded morphology of powders size of ∼41 nm was obtained with a salt concentration of 0.02 M. Finally, it can be concluded that small changes in the reaction conditions led to large changes in final size, shape and degree of aggregation of the hydroxyapatite particles.

  12. Nanocrystalline cellulose for covert optical encryption

    NASA Astrophysics Data System (ADS)

    Zhang, Yu Ping; Chodavarapu, Vamsy P.; Kirk, Andrew G.; Andrews, Mark P.

    2012-02-01

    Nanocrystalline cellulose solid films derived from spruce pulp exhibit iridescence when cast from chiral nematic aqueous phase suspensions of the nanocrystals. Iridescence is a color travel phenomenon that might have potential for overt encryption as an anti-counterfeiting measure. The iridescent phase also offers an intrinsic level of covert encryption by virtue of the fact that films of NCC reflect left-circularly polarized light. Addition of TINOPAL, an optical brightening agent (OBA), adds a third level of (covert) encryption potential since the chromophore exhibits strong fluorescence when excited at ultra-violet wavelengths. The overall result is a selectively polarizing fluorescent iridescent film. We study the impact of additions of OBA on NCC iridescence, optical activity, and physical structure variation with polarized optical microscopy, circular dichroism spectropolarimetry and zeta potential analysis. Increasing OBA additions increase the chiral nematic pitch of NCC films, and this in turn alters chiral nematic domain structure in the solid film. Under low concentration conditions defined by our experiments, OBA yields intense UV fluorescence, without compromising the visible light iridescent properties of the film. The potential security offered by NCC and its optical responses can be authenticated using a UV light source such as is commonly used for banknote verification, a circular polarizer in conjunction with an iridescent feature which can be verified by the eye or by chiral spectrometry.

  13. Deuterium storage in nanocrystalline magnesium thin films

    NASA Astrophysics Data System (ADS)

    Checchetto, R.; Bazzanella, N.; Miotello, A.; Brusa, R. S.; Zecca, A.; Mengucci, A.

    2004-02-01

    Nanocrystalline magnesium deuteride thin films with the β-MgD2 structure were prepared by vacuum evaporation of hexagonal magnesium (h-Mg) samples and thermal annealing in 0.15 MPa D2 atmosphere at 373 K. Thermal desorption spectroscopy analysis indicated that the rate-limiting step in the deuterium desorption was given by the thermal decomposition of the deuteride phase. The activation energy Δg of the β-MgD2→h-Mg+D2 reaction scaled from 1.13±0.03 eV in 650-nm-thick films to 1.01±0.02 eV in 75-nm-thick films most likely as consequence of different stress and defect level. Positron annihilation spectroscopy analysis of the thin-film samples submitted to deuterium absorption and desorption cycles reveal the presence of a high concentration of void-like defects in the h-Mg layers after the very first decomposition of the β-MgD2 phase, the presence of these open volume defects reduces the D2 absorption capacity of the h-Mg thin film.

  14. Films prepared from electrosterically stabilized nanocrystalline cellulose.

    PubMed

    Yang, Han; Tejado, Alvaro; Alam, Nur; Antal, Miro; van de Ven, Theo G M

    2012-05-22

    Electrosterically stabilized nanocrystalline cellulose (ENCC) was modified in three ways: (1) the hydroxyl groups on C2 and C3 of glucose repeat units of ENCC were converted to aldehyde groups by periodate oxidation to various extents; (2) the carboxyl groups in the sodium form on ENCC were converted to the acid form by treating them with an acid-type ion-exchange resin; and (3) ENCC was cross-linked in two different ways by employing adipic dihydrazide as a cross-linker and water-soluble 1-ethyl-3-[3-(dimethylaminopropyl)] carbodiimide as a carboxyl-activating agent. Films were prepared from these modified ENCC suspensions by vacuum filtration. The effects of these three modifications on the properties of films were investigated by a variety of techniques, including UV-visible spectroscopy, a tensile test, thermogravimetric analysis (TGA), the water vapor transmission rate (WVTR), and contact angle (CA) studies. On the basis of the results from UV spectra, the transmittance of these films was as high as 87%, which shows them to be highly transparent. The tensile strength of these films was increased with increasing aldehyde content. From TGA and WVTR experiments, cross-linked films showed much higher thermal stability and lower water permeability. Furthermore, although the original cellulose is hydrophilic, these films also exhibited a certain hydrophobic behavior. Films treated by trichloromethylsilane become superhydrophobic. The unique characteristics of these transparent films are very promising for potential applications in flexible packaging and other high-technology products. PMID:22482733

  15. Dispersibility in water of dried nanocrystalline cellulose.

    PubMed

    Beck, Stephanie; Bouchard, Jean; Berry, Richard

    2012-05-14

    Dispersibility is important for nanocrystalline cellulose (NCC) because recovering the unique suspension and particle properties is essential after the product has been dried for storage or transport. It is our goal to produce dried NCC that redisperses in water to yield colloidal suspensions without the use of additives or a large energy input. In contrast with the as-prepared acidic form of NCC (H-NCC), suspensions of neutral sodium-form NCC (Na-NCC) dried by evaporation, lyophilization, or spray-drying are readily dispersible in water. Suspension properties and NCC particle size determined by light scattering were used as indicators of dispersion quality. The neutral counterion content, drying technique, freezing action, drying and redispersion concentrations, and moisture content in the dried NCC were all found to influence dispersibility. When a minimum of 94% of the H(+) counterion is exchanged for Na(+), the neutral salt form is fully dispersible in water even when fully dried. Mild sonication is generally sufficient to recover measured particle sizes identical to those in the never-dried Na-NCC sample. A threshold moisture content of 4 wt % was found, above which dried H-NCC is fully dispersible in water. PMID:22482888

  16. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

    PubMed

    Boland, Jessica L; Casadei, Alberto; Tütüncüoglu, Gözde; Matteini, Federico; Davies, Christopher L; Jabeen, Fauzia; Joyce, Hannah J; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

    2016-04-26

    Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers. PMID:26959350

  17. Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

    NASA Astrophysics Data System (ADS)

    Kato, Keiko; Oguri, Katsuya; Sanada, Haruki; Tawara, Takehiko; Sogawa, Tetsuomi; Gotoh, Hideki

    2015-09-01

    We determine phonon decay rate by measuring the temperature dependence of coherent phonons in p-type Si under Fano resonance, where there is interference between the continuum and discrete states. As the temperature decreases, the decay rate of coherent phonons decreases, whereas that evaluated from the Raman linewidth increases. The former follows the anharmonic decay model, whereas the latter does not. The different temperature dependences of the phonon decay rate of the two methods originate from the way that the continuum state, which originates from the Fano resonance, modifies the time- and frequency-domain spectra. The observation of coherent phonons is useful for evaluating the phonon decay rate free from the interaction with the continuum state and clarifies that the anharmonic decay is dominant in p-type Si even under Fano resonance.

  18. Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors.

    PubMed

    Han, Guang; Popuri, Srinivas R; Greer, Heather F; Bos, Jan-Willem G; Zhou, Wuzong; Knox, Andrew R; Montecucco, Andrea; Siviter, Jonathan; Man, Elena A; Macauley, Martin; Paul, Douglas J; Li, Wen-Guang; Paul, Manosh C; Gao, Min; Sweet, Tracy; Freer, Robert; Azough, Feridoon; Baig, Hasan; Sellami, Nazmi; Mallick, Tapas K; Gregory, Duncan H

    2016-05-23

    A surfactant-free solution methodology, simply using water as a solvent, has been developed for the straightforward synthesis of single-phase orthorhombic SnSe nanoplates in gram quantities. Individual nanoplates are composed of {100} surfaces with {011} edge facets. Hot-pressed nanostructured compacts (Eg ≈0.85 eV) exhibit excellent electrical conductivity and thermoelectric power factors (S(2) σ) at 550 K. S(2) σ values are 8-fold higher than equivalent materials prepared using citric acid as a structure-directing agent, and electrical properties are comparable to the best-performing, extrinsically doped p-type polycrystalline tin selenides. The method offers an energy-efficient, rapid route to p-type SnSe nanostructures. PMID:27094703

  19. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    SciTech Connect

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  20. Formation of a self-consistent double quantum well in a wide p-type quantum well

    NASA Astrophysics Data System (ADS)

    Alshanskiǐ, G. A.; Yakunin, M. V.

    2004-11-01

    The process of formation of self-consistent double quantum wells (DQWs) in a wide p-type quantum well in the presence of uniaxial strain is investigated. A feature of p-type systems is the structure of the valence band, which consists of two branches of energy dispersion—light and heavy holes. It is shown that this feature leads to significant splitting of the subbands of symmetric and antisymmetric states, as a result of which it is difficult to form states of the DQW with a vanishingly small tunneling gap; a uniaxial strain, by lifting the degeneracy of the band, suppresses this property, so that the two ground subbands of the size quantization of the DQW remain degenerate to high energies.

  1. Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

    NASA Astrophysics Data System (ADS)

    Huang, B.

    2016-07-01

    We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

  2. The Use of Metal Fluoride Compounds as Phosphate Analogs for Understanding the Structural Mechanism in P-type ATPases.

    PubMed

    Danko, Stefania J; Suzuki, Hiroshi

    2016-01-01

    The membrane-bound protein family, P-type ATPases, couples ATP hydrolysis with substrate transport across the membrane and forms an obligatory auto-phosphorylated intermediate in the transport cycle. The metal fluoride compounds, BeF x , AlF x , and MgF x , as phosphate analogs stabilize different enzyme structural states in the phosphoryl transfer/hydrolysis reactions, thereby fixing otherwise short-lived intermediate and transient structural states and enabling their biochemical and atomic-level crystallographic studies. The compounds thus make an essential contribution for understanding of the ATP-driven transport mechanism. Here, with a representative member of P-type ATPase, sarco(endo)plasmic reticulum Ca(2+)-ATPase (SERCA), we describe the method for their binding and for structural and functional characterization of the bound states, and their assignments to states occurring in the transport cycle. PMID:26695034

  3. Fabrication and reducing gas detection characterization of highly-crystalline p-type zinc chromite oxide thin film

    NASA Astrophysics Data System (ADS)

    Liang, Yuan-Chang; Cheng, Yu-Ru; Hsia, Hao-Yuan; Chung, Cheng-Chia

    2016-02-01

    A p-type ternary ZnCr2O4 (ZCO) thin film was fabricated using rf sputtering on a sapphire substrate. Microstructural analyses revealed that the ZCO thin film had a high crystalline quality. Surface morphology investigations showed that the ZCO film had a rugged surface because of a distinct columnar grain feature. A gas sensor composed of the ZCO thin film exhibited marked acetone and NH3 gas-sensing responses. These acetone and NH3 gas-sensing responses reached an optimal value at operating temperatures of 250 °C and 300 °C, respectively. The ZCO sensor showed satisfactory repeatability when operated under dynamic conditions. The stable gas-sensing behavior of the p-type ZCO thin film to acetone and NH3 gases broadens the design of oxide gas sensors incorporated with this ternary oxide.

  4. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    PubMed Central

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-01-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

  5. Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer

    NASA Astrophysics Data System (ADS)

    Xu, Mingsheng; Zhou, Quanbin; Zhang, Heng; Wang, Hong; Zhang, Xichun

    2016-06-01

    We investigate a novel near-ultraviolet light-emitting diode (NUV-LED) with a p-type AlGaN (pAlGaN) hole injection layer to replace the conventional p-type GaN layer. The optical properties are studied numerically with simulations. Our calculated results indicate that a pAlGaN layer can significantly improve both light output power and internal quantum efficiency of a NUV-LED. The light power of NUV-LED with constant and gradually increasing Al content of the pAlGaN layer increases by 215% and 266% compared to a conventional LED. We also find that the elimination of the interface barrier and suppression of the polarization field are the key factors that lead to the improved NUV-LED performance.

  6. Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

    NASA Astrophysics Data System (ADS)

    Lee, Y. H.; Lee, J. C.; Min, J. F.; Su, C. W.

    2011-07-01

    Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N 2, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34×10 20 and 5.27×10 13 cm -3. Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties.

  7. Enhanced photoluminescence of nonpolar p-type ZnO film by surface plasmon resonance and electron transfer.

    PubMed

    Chen, Shanshan; Pan, Xinhua; He, Haiping; Chen, Wei; Chen, Cong; Dai, Wen; Zhang, Honghai; Ding, Ping; Huang, Jingyun; Lu, Bin; Ye, Zhizhen

    2015-02-15

    Nonpolar oriented Na-doped ZnO films were grown on m-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films show repeatable p-type conductivity with a hole concentration of about 3.0×10(16) cm(-3) as identified by the Hall-effect measurements. 10-fold enhancement in the near-band-edge (NBE) emission of the nonpolar p-type ZnO by employing Pt nanoparticle surface plasmons has been observed. In addition, the deep level emission has been entirely suppressed. The underlying mechanism behind the enhancement of NBE emission and the quenching of defect emission is a combination of the electron transfer and the resonant coupling between NBE emission and Pt nanoparticle surface plasmons. PMID:25680172

  8. Resputtering Effect on Nanocrystalline Ni-Ti Alloy Films

    NASA Astrophysics Data System (ADS)

    Priydarshini, B. Geetha; Esakkiraja, N.; Aich, Shampa; Chakraborty, M.

    2016-04-01

    We report on the effect of resputtering on the properties of nanocrystalline Ni-Ti alloy thin films deposited using co-sputtering of Ni and Ti targets. In order to facilitate the formation of nanocrystalline phases, films were deposited at room temperature and 573 K (300 °C) with substrate bias voltage of -100 V. The influence of substrate material on the composition, surface topography microstructure, and phase formations of nanocrystalline Ni-Ti thin films was also systematically investigated. The preferential resputtering of Ti adatoms was lesser for Ni-Ti films deposited on quartz substrate owing to high surface roughness of 4.87 nm compared to roughness value of 1.27 nm for Si(100) substrate.

  9. Kinetic constants of abnormal grain growth in nanocrystalline nickel

    NASA Astrophysics Data System (ADS)

    Aleshin, A. N.

    2016-02-01

    The grain growth in nanocrystalline nickel with a purity of 99.5 at % during non-isothermal annealing was experimentally investigated using differential scanning calorimetry and transmission electron microscopy. Nanocrystalline nickel was prepared by electrodeposition and had an average grain size of approximately 20 nm. It was shown that, at a temperature corresponding to the calorimetric signal peak, abnormal grain growth occurs with the formation of a bimodal grain microstructure. Calorimeters signals were processed within the Johnson-Mehl-Avrami formalism. This made it possible to determine the exponent of the corresponding equation, the frequency factor, and the activation energy of the grain growth, which was found to be equal to the activation energy of the vacancy migration. The reasons for the abnormal grain growth in nanocrystalline nickel were discussed.

  10. Structural, optical and magnetic behaviour of nanocrystalline Volborthite

    NASA Astrophysics Data System (ADS)

    Arvind, Hemant K.; Kalal, Sangeeta; Punjabi, P. B.; Choudhary, B. L.; Dolia, S. N.; Kumar, Sudhish

    2016-05-01

    Nanocrystalline sample of Volborthite (Copper Pyrovanadate: Cu3V2 (OH)2O7.2H2O) has been synthesized using wet chemical route and characterized by XRD, SEM, FTIR, UV-Vis-NIR spectroscopic and magnetization measurements. Room temperature X-ray diffraction analysis confirms the single phase monoclinic structure and nanocrystalline nature of Volborthite. The UV-Visible optical absorption spectrum displays two broad absorption peaks in the range of 200-350 nm and 400-1000 nm. The direct band gap is found to be Eg= ˜2.74 eV. Bulk Volborthite was reported to be a natural frustrated antiferromagnet, however our nanocrystalline Volborthite display week ferromagnetic hysteresis loop with very small coercivity and retentivity at room temperature.

  11. Tuning the Properties of Nanocrystalline CdS Thin Films

    NASA Astrophysics Data System (ADS)

    Ikhmayies, Shadia J.

    2014-01-01

    Tuning the properties of nanocrystalline cadmium sulfide (CdS) thin films is very important in the technology of photonics, detectors, and computing devices. This can be achieved through the appropriate selection of the synthesis techniques, types and concentrations of the chemicals, deposition parameters, and postdeposition heat treatments. In addition, control of the properties can be achieved by controlling the size, structure type, and surface states of the nanocrystallites without altering the chemical composition of the films. A review of the experimental methods for tuning the properties of nanocrystalline CdS thin films is performed. Although control of these variables is a complicated process, high-quality nanocrystalline CdS thin films with optimum structural, morphological, and optical properties have been produced by different authors.

  12. Nanocrystalline Pd alloy films coated by electroless deposition.

    PubMed

    Strukov, G V; Strukova, G K; Batov, I E; Sakharov, M K; Kudrenko, E A; Mazilkin, A A

    2011-10-01

    The structures of palladium and palladium alloys thin films deposited from organic electrolytes onto metallic substrates by electroless plating method have been investigated. The coatings are dense, pore-free 0.005-1 microm thick films with high adhesive strength to the substrate surface. EDX, XRD, SEM and TEM methods were used to determine the composition and structure of alloy coatings of the following binary systems: Pd-Au, Pd-Ag, Pd-Ni, Pd-Pb, and ternary system Pd-Au-Ni. The coatings of Pd-Au, Pd-Ag and Pd-Ni have a solid solution structure, whereas Pd-Pb is intermetallic compound. It has been found that the deposited films consist of nanocrystalline grains with sizes in the range of 11-35 nm. Scanning and transmission electron microscopy investigations reveal the existence of clusters formed by nanocrystalline grains. The origin for the formation of nanocrystalline structures of coating films is discussed. PMID:22400291

  13. G-protein-independent modulation of P-type calcium channels by μ-opioids in Purkinje neurons of rat

    PubMed Central

    Iegorova, Olena; Fisyunov, Alexander; Krishtal, Oleg

    2010-01-01

    P-type calcium channels play a key role in the synaptic transmission between mammalian central neurons since a major part of calcium entering pre-synaptic terminals is delivered via these channels. Using conventional whole-cell patch clamp techniques we have studied the effect of μ-opioids on P-type calcium channels in acutely isolated Purkinje neurons from rat cerebellum. The selective μ-opioid agonist DAMGO (10 nM) produced a small, but consistent facilitation of current through P-type calcium channels (10±1%, n=27, p<0.001). The effect of DAMGO was rapid (less than 10 sec) and fully reversible. This effect was both concentration and voltage-dependent. The EC50 for the effect of DAMGO was 1.3±0.4 nM and the saturating concentration was 100 nM. The endogenous selective agonist of μ-opioid receptors, endomorphin-1 demonstrated similar action. Intracellular perfusion of Purkinje neurons with GTPγS (0.5 mM) or GDPβS (0.5 mM), as well as strong depolarizing pre-pulses (+50 mV), did not eliminate facilitatory action of DAMGO on P-channels indicating that this effect is not mediated by G-proteins. Furthermore, the effect of DAMGO was preserved in the presence of a non-specific inhibitor of PKA and PKC, (H7, 10 μM) inside the cell. DAMGO–induced facilitation of P-current was almost completely abolished by the selective μ-opioid antagonist CTOP (100 nM). These observations indicate that μ-type opioid receptors modulate P-type calcium channels in Purkinje neurons via G-protein-independent mechanism. PMID:20541588

  14. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

    NASA Astrophysics Data System (ADS)

    Lao, Y. F.; Perera, A. G. U.; Wang, H. L.; Zhao, J. H.; Jin, Y. J.; Zhang, D. H.

    2016-03-01

    Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3-5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ0, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ0 is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ0. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

  15. The origin of p-type conductivity in ZnM2O4 (M = Co, Rh, Ir) spinels.

    PubMed

    Amini, M N; Dixit, H; Saniz, R; Lamoen, D; Partoens, B

    2014-02-14

    ZnM2O4 (M = Co, Rh, Ir) spinels are considered as a class of potential p-type transparent conducting oxides (TCOs). We report the formation energy of acceptor-like defects using first principles calculations with an advanced hybrid exchange-correlation functional (HSE06) within density functional theory (DFT). Due to the discrepancies between the theoretically obtained band gaps with this hybrid functional and the - scattered - experimental results, we also perform GW calculations to support the validity of the description of these spinels with the HSE06 functional. The considered defects are the cation vacancy and antisite defects, which are supposed to be the leading source of disorder in the spinel structures. We also discuss the band alignments in these spinels. The calculated formation energies indicate that the antisite defects ZnM (Zn replacing M, M = Co, Rh, Ir) and VZn act as shallow acceptors in ZnCo2O4, ZnRh2O4 and ZnIr2O4, which explains the experimentally observed p-type conductivity in those systems. Moreover, our systematic study indicates that the ZnIr antisite defect has the lowest formation energy in the group and it corroborates the highest p-type conductivity reported for ZnIr2O4 among the group of ZnM2O4 spinels. To gain further insight into factors affecting the p-type conductivity, we have also investigated the formation of localized small polarons by calculating the self-trapping energy of the holes. PMID:24382577

  16. S-TYPE AND P-TYPE HABITABILITY IN STELLAR BINARY SYSTEMS: A COMPREHENSIVE APPROACH. II. ELLIPTICAL ORBITS

    SciTech Connect

    Cuntz, M.

    2015-01-10

    In the first paper of this series, a comprehensive approach has been provided for the study of S-type and P-type habitable regions in stellar binary systems, which was, however, restricted to circular orbits of the stellar components. Fortunately, a modest modification of the method also allows for the consideration of elliptical orbits, which of course entails a much broader range of applicability. This augmented method is presented here, and numerous applications are conveyed. In alignment with Paper I, the selected approach considers a variety of aspects, which comprise the consideration of a joint constraint including orbital stability and a habitable region for a possible system planet through the stellar radiative energy fluxes ({sup r}adiative habitable zone{sup ;} RHZ). The devised method is based on a combined formalism for the assessment of both S-type and P-type habitability; in particular, mathematical criteria are deduced for which kinds of systems S-type and P-type habitable zones are realized. If the RHZs are truncated by the additional constraint of orbital stability, the notation of ST-type and PT-type habitability applies. In comparison to the circular case, it is found that in systems of higher eccentricity, the range of the RHZs is significantly reduced. Moreover, for a considerable number of models, the orbital stability constraint also reduces the range of S-type and P-type habitability. Nonetheless, S-, P-, ST-, and PT-type habitability is identified for a considerable set of system parameters. The method as presented is utilized for BinHab, an online code available at The University of Texas at Arlington.

  17. Identification and molecular characterization of a novel DyP-type peroxidase from Pseudomonas aeruginosa PKE117.

    PubMed

    Li, Jing; Liu, Chen; Li, Baozhen; Yuan, Hongli; Yang, Jinshui; Zheng, Beiwen

    2012-02-01

    A new DyP-type peroxidase from Pseudomonas aeruginosa PKE117 was identified and characterized. The dypPa was first identified via sequence analysis and then cloned in Escherichia coli. Subsequently, the recombinant protein DyPPa was expressed and purified. Its DNA sequence analysis revealed an open reading frame of 897 bp, encoding a protein monomer of 299 amino acid residues with isoelectric point 4.62. According to SDS-PAGE analysis and FPLC result, DyPPa mainly existed as homodimer (64 kDa). DyPPa displayed typical heme absorbance of Soret band, with an Rz value of 1.18. Inductively coupled plasma-atomic absorption spectrum data also indicated DyPPa contained iron. Multiple amino acid sequence alignment of DyPPa with other members of the DyP-type peroxidases family showed the presence of conserved D139, H210, and R227 amino acids and GXXDG motifs, which were commonly shared by the DyP-type peroxidase family. Although the primary structure homology between DyPPa and other family members was very low, their secondary and tertiary structure displayed high homology, which explained the high decolorizing activity of DyPPa. Specifically, DyPPa displayed a good thermal stability and maximal activity on Reactive blue 5 under pH 3.5. Therefore, it was proposed that DyPPa, with a wide range of substrate specificity, was a novel member of the DyP-type peroxidases family. PMID:22161141

  18. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    PubMed Central

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  19. Thermoelectric properties of p-type PbTe/Ag{sub 2}Te bulk composites by extrinsic phase mixing

    SciTech Connect

    Lee, Min Ho; Rhyee, Jong-Soo

    2015-12-15

    We investigated the thermoelectric properties of PbTe/Ag{sub 2}Te bulk composites, synthesized by hand milling, mixing, and hot press sintering. From x-ray diffraction and energy dispersive x-ray spectroscopy measurements, we observed Ag{sub 2}Te phase separation in the PbTe matrix without Ag atom diffusion. In comparison with previously reported pseudo-binary (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} composites, synthesized by high temperature phase separation, the PbTe/Ag{sub 2}Te bulk composites fabricated with a low temperature phase mixing process give rise to p-type conduction of carriers with significantly decreased electrical conductivity. This indicates that Ag atom diffusion in the PbTe matrix changes the sign of the Seebeck coefficient to n-type and also increases the carrier concentration. Effective p-type doping with low temperature phase separation by mixing and hot press sintering can enhance the thermoelectric performance of PbTe/Ag{sub 2}Te bulk composites, which can be used as a p-type counterpart of n-type (PbTe){sub 1−x}(Ag{sub 2}Te){sub x} bulk composites.

  20. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

    NASA Astrophysics Data System (ADS)

    Tadaki, Daisuke; Ma, Teng; Zhang, Jinyu; Iino, Shohei; Hirano-Iwata, Ayumi; Kimura, Yasuo; Rosenberg, Richard A.; Niwano, Michio

    2016-04-01

    Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p+-i-p+ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p+) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was used as the p-type dopant. A fabricating method of p+-i-p+ OTFTs has been developed by using SiO2 and aluminum films as capping layers for micro-scaled patterning of the p+-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p+-i-p+ OTFTs work with carrier injection through a built-in potential at p+/i interfaces. We found that the p+-i-p+ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p+-P3HT layers.

  1. Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN

    NASA Astrophysics Data System (ADS)

    Tang, Yingwen; Li, Xue; Kang, Yong; Li, Xiangyang; Gong, Haimei

    2005-01-01

    The contact resistivity of Ni/Au contact on p-type GaN was drastically decreased through the surface treatments in sequence using alcohol-based HCl and KOH solution. The surface oxide on p-type GaN formed during epitaxial growth was removed in the alcohol-based HCl and KOH solution, The O 1s and C 1s core-level peaks in the x-ray photoemission spectra showed that the alcohol-based HCl treatment was more effective in removing of the surface oxide layer. Compared to the KOH solution treated sample, the alcohol-based HCl-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.3 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Ni/Au metal to p-type GaN be lowered by the surface treatment, which results in a drastic reduction in specific contact resistance.

  2. Characterization and modeling of P-type electrosensory afferent responses to amplitude modulations in a wave-type electric fish.

    PubMed

    Nelson, M E; Xu, Z; Payne, J R

    1997-11-01

    The first stage of information processing in the electrosensory system involves the encoding of local changes in transdermal potential into trains of action potentials in primary electrosensory afferent nerve fibers. To develop a quantitative model of this encoding process for P-type (probability-coding) afferent fibers in the weakly electric fish Apteronotus leptorhynchus, we recorded single unit activity from electrosensory afferent axons in the posterior branch of the anterior lateral line nerve and analyzed responses to electronically generated sinusoidal amplitude modulations of the local transdermal potential. Over a range of AM frequencies from 0.1 to 200 Hz, the modulation transfer function of P-type afferents is high-pass in character, with a gain that increases monotonically up to AM frequencies of 100 Hz where it begins to roll off, and a phase advance with a range of 15-60 degrees. Based on quantitative analysis of the observed gain and phase characteristics, we present a computationally efficient model of P-type afferent response dynamics which accurately characterizes changes in afferent firing rate in response to amplitude modulations of the fish's own electric organ discharge over a wide range of AM frequencies relevant to active electrolocation. PMID:9373958

  3. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    NASA Astrophysics Data System (ADS)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  4. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    PubMed

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  5. Structural and Luminescence Features of Lithium-Doped p-Type Film-Like ZnO Nanorods.

    PubMed

    Ko, Wonbae; Lee, Sanghyo; Hong, Jin Pyo

    2015-11-01

    We report the structural and optical characteristics of p-type lithium (Li)-doped ZnO film-like nano-structures prepared by utilizing a simple hydro-thermal method in an aqueous solution at a low temperature (< 90 degrees C). The diameters and densities of the Li-doped ZnO nanostructures were controlled by adjusting the molar concentration. A relatively high molar concentration resulted in hexagonal and flat surface-shaped ZnO nanostructures. In addition, a post-annealing process in the range of 400 to 600 degrees C effectively leads to the incorporation of lithium dopant as an acceptor, resulting in optical p-type behavior. The p-type features of synthesized Li-doped ZnO nanostructures were analyzed using a photoluminescence measurement using a He-Cd laser as an excitation source at 10 K. Closer investigation of the fine donor- and acceptor-bound exciton emission peaks from the low temperature PL spectra revealed the occurrence of several peaks related to free excitons (FX), excitons bound to acceptor (A(0)X), free electron to the acceptor transition peak (FA), and its LO phonon replicas. PMID:26726574

  6. Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

    NASA Astrophysics Data System (ADS)

    Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, J.; Wan, Y.

    2015-02-01

    We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τbulk was found to increase from ˜500 μs to ˜1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3 < Eann < 0.7 eV. When the annihilated samples were phosphorus gettered at 880 °C or subject to 0.2 sun illumination for 24 h, τbulk was found to degrade. However, when the samples were subsequently annealed at temperatures between 250 and 400 °C, the defect could be re-annihilated. The experimental results suggest that the defect limiting the lifetime in the p-type FZ silicon is not related to fast diffusing metallic impurities but rather to a lattice-impurity or an impurity-impurity metastable defect.

  7. Diffraction studies of the thermal properties of nanocrystalline Pd and Cr

    SciTech Connect

    Eastman, J.A.; Thompson, L.J. ); Fitzsimmons, M.R.; Lawson, A.C.; Robinson, R.A. )

    1992-09-01

    Quantitative X-ray and neutron diffraction measurements were made on nanocrystalline and coarse-grained samples of Pd and Cr. For both materials, Debye-Waller parameter comparisons over a temperature range of approximately 20-300 K indicate that the nanocrystalline materials have increased static displacements of atoms from their equilibrium sites compared to coarse-grained material. No grain-size-correlated differences in thermal vibrational amplitude, lattice parameter, or thermal expansion coefficients were observed in either material. In contrast to earlier results on nanocrystalline Pd, significantly more non-peak intensity is observed from a nanocrystalline Cr sample than from a coarse-grained Cr sample. Impurities may account for the increased background intensity from nanocrystalline Cr. These results indicate that there is no significant grain boundary excess volume in nanocrystalline Pd, and therefore the reduced density typically observed in nanocrystalline Pd samples must be due to porosity.

  8. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

    SciTech Connect

    Semenov, A. V. Lopin, A. V.; Puzikov, V. M.; Baumer, V. N.; Dmitruk, I. N.

    2010-06-15

    The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

  9. Synthesis, characterization and mechanical properties of nanocrystalline NiAl

    SciTech Connect

    Choudry, M. |; Eastman, J.A.; DiMelfi, R.J.; Dollar, M.

    1996-11-01

    Nanocrystalline NiAl was produced from pre-cast alloys using an electron beam inert gas condensation system. In-situ compaction was carried out at 100-300 C under vacuum conditions. Energy dispersive spectroscopy was used to determine chemical composition and homogeneity. Average grain sizes in the range 4-10 nm were found from TEM dark field analyses. A compression-cage fixture was designed to perform disk bend tests. These tests revealed substantial room temperature ductility in nanocrystalline NiAl, while coarse grained NiAl showed no measurable room temperature ductility.

  10. Low temperature nanocrystalline zinc oxide for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Greulich-Weber, S.; Arceiz Casas, S.; Weber, N.

    2015-04-01

    Nanocrystalline ZnO was synthesized by a low temperature sol-gel route. The ZnOnanocrystals were investigated by X-ray diffraction (XRD), electron paramagnetic resonance (EPR), photoluminescence (PL), and conductivity measurements. The goal was the development of nanocrystalline ZnO as a transparent conductive oxide blocking ultraviolet (uv) light and using a defect photoluminescence band for down-shifting uvlight into the visible range, where organic photoactive polymers have their absorption maximum. The resulting defects and physical properties are discussed with respect to the conductivity of ZnO nanocrystals.

  11. Strengthening and softening of nanocrystalline nickel during multistep nanoindentation

    SciTech Connect

    Nieh, Tai-Gang; Pan, D; Chen, Ming-Wei

    2006-04-01

    Multistep load-unload nanoindentation was employed to address the effect of deformation-induced microstructural evolution on mechanical behavior of nanocrystalline Ni. Deformation discontinuity was deliberately introduced by unloading-reloading during nanoindentation testing, which allows us to examine the influence of microstructural evolution on the successive deformation. Strain strengthening/softening of nanocrystalline nickel, associated with the transition of deformation behavior from dislocation activity at high loading rates to a grain-boundary-mediated process at low loading rates, was uncovered by means of this experimental methodology.

  12. TRACKING SOLUTE ATOMS DURING BAINITE REACTION IN A NANOCRYSTALLINE STEEL

    SciTech Connect

    Caballero, Francesca G.; Miller, Michael K; Garcia-Mateo, C.

    2010-01-01

    The extremely slow transformation kinetics of a nanocrystalline bainitic steel makes this novel structure the perfect candidate to determine the carbon content of the bainitic ferrite away from any carbon enriched regions, such as dislocations and boundaries, as the bainite transformation progresses at extremely low temperatures. The purpose of this atom probe tomography study was to systematically track atom distributions during the bainite reaction in a nanocrystalline steel. The results will provide new experimental evidence on the explanation for the incomplete reaction phenomenon and the carbon supersaturation of the bainitic ferrite during transformation, subjects critically relevant to understanding the atomic mechanism controlling bainitic ferrite growth.

  13. Nanocrystalline glass ceramics: Structural, physical and optical properties

    NASA Astrophysics Data System (ADS)

    Singh, Satwinder; Singh, K.

    2015-02-01

    Four different transition metals contained nanocrystalline glass ceramics are synthesized by melting and quenching technique. The transition metal oxides play as former, modifier or both the roles depending on their oxidation states, field strength and covalent characteristics. The optical band gaps are observed in the range of 3.2-5.5 eV. The presence of nano-crystalline phases dominates the optical band gap. The softening temperature (Ts) is mainly affected by the residual glass in glass ceramics. These glass ceramics can be used as shielding materials for nuclear waste.

  14. Deformation mechanism crossover and mechanical behaviour in nanocrystalline materials.

    SciTech Connect

    Yamakov, V.; Wolf, D.; Phillpot, S. R.; Mukherjee, A. K.; Gleiter, H.; Materials Science Division; Univ. of California-Davis; Forschungszentrum Karlsruhe

    2003-06-01

    We use molecular dynamics simulations to elucidate the transition with decreasing grain size from a dislocation- to a grain-boundary-based deformation mechanism in nanocrystalline fcc metals. Our simulations reveal that this crossover is accompanied by a pronounced transition in the mechanical behaviour of the material; namely, at the grain size where the crossover occurs (the 'strongest size'), the strain rate under tensile elongation goes through a minimum. This simultaneous transition in both the deformation mechanism and the corresponding mechanical behaviour offers an explanation for the experimentally observed crossover in the yield strength of nanocrystalline materials, from Hall-Petch hardening to 'inverse Hall-Petch' softening.

  15. Coarse Graining and Localized Plasticity between Sliding Nanocrystalline Metals

    NASA Astrophysics Data System (ADS)

    Romero, Pedro A.; Järvi, Tommi T.; Beckmann, Nils; Mrovec, Matous; Moseler, Michael

    2014-07-01

    Tribological shearing of polycrystalline metals typically leads to grain refinement at the sliding interface. This study, however, shows that nanocrystalline metals exhibit qualitatively different behavior. Using large-scale atomistic simulations, we demonstrate that during sliding, contact interface nanocrystalline grains self-organize through extensive grain coarsening and lattice rotation until the optimal plastic slip orientation is established. Subsequently, plastic deformation is frequently confined to localized nanoshear bands aligned with the shearing direction and emanating from voids and other defects in the vicinity of the sliding interface.

  16. A mild reduction phosphidation approach to nanocrystalline GaP

    NASA Astrophysics Data System (ADS)

    Chen, Luyang; Luo, Tao; Huang, Mingxing; Gu, Yunle; Shi, Liang; Qian, Yitai

    2004-12-01

    Nanocrystalline gallium phosphide (GaP) has been prepared through a reduction-phosphidation by using Ga, PCl 3 as gallium and phosphorus sources and metallic sodium as reductant at 350 °C. The XRD pattern can be indexed as cublic GaP with the lattice constant of a=5.446 Å. The TEM image shows particle-like polycrystals and flake-like single crystals. The PL spectrum exhibits one peak at 330 nm for the as-prepared nanocrystalline GaP.

  17. Copper removal using electrosterically stabilized nanocrystalline cellulose.

    PubMed

    Sheikhi, Amir; Safari, Salman; Yang, Han; van de Ven, Theo G M

    2015-06-01

    Removal of heavy metal ions such as copper using an efficient and low-cost method with low ecological footprint is a critical process in wastewater treatment, which can be achieved in a liquid phase using nanoadsorbents such as inorganic nanoparticles. Recently, attention has turned toward developing sustainable and environmentally friendly nanoadsorbents to remove heavy metal ions from aqueous media. Electrosterically stabilized nanocrystalline cellulose (ENCC), which can be prepared from wood fibers through periodate/chlorite oxidation, has been shown to have a high charge content and colloidal stability. Here, we show that ENCC scavenges copper ions by different mechanisms depending on the ion concentration. When the Cu(II) concentration is low (C0≲200 ppm), agglomerates of starlike ENCC particles appear, which are broken into individual starlike entities by shear and Brownian motion, as evidenced by photometric dispersion analysis, dynamic light scattering, and transmission electron microscopy. On the other hand, at higher copper concentrations, the aggregate morphology changes from starlike to raftlike, which is probably due to the collapse of protruding dicarboxylic cellulose (DCC) chains and ENCC charge neutralization by copper adsorption. Such raftlike structures result from head-to-head and lateral aggregation of neutralized ENCCs as confirmed by transmission electron microscopy. As opposed to starlike aggregates, the raftlike structures grow gradually and are prone to sedimentation at copper concentrations C0≳500 ppm, which eliminates a costly separation step in wastewater treatment processes. Moreover, a copper removal capacity of ∼185 mg g(-1) was achieved thanks to the highly charged DCC polyanions protruding from ENCC. These properties along with the biorenewability make ENCC a promising candidate for wastewater treatment, in which fast, facile, and low-cost removal of heavy metal ions is desired most. PMID:25950624

  18. The role of nanoscale defect features in enhancing the thermoelectric performance of p-type nanostructured SiGe alloys

    NASA Astrophysics Data System (ADS)

    Bathula, Sivaiah; Jayasimhadri, M.; Gahtori, Bhasker; Singh, Niraj Kumar; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay

    2015-07-01

    Despite SiGe being one of the most widely studied thermoelectric materials owing to its application in radioisotope thermoelectric generators (RTG), the thermoelectric figure-of merit (ZT) of p-type SiGe is still quite low, resulting in poor device efficiencies. In the present study, we report a substantial enhancement in ZT ~ 1.2 at 900 °C for p-type nanostructured Si80Ge20 alloys by creating several types of defect features within the Si80Ge20 nanostructured matrix in a spectrum of nano to meso-scale dimensions during its nanostructuring, by employing mechanical alloying followed by spark plasma sintering. This enhancement in ZT, which is ~25% over the existing state-of-the-art value for a p-type nanostructured Si80Ge20 alloy, is primarily due to its ultralow thermal conductivity of ~2.04 W m-1 K-1 at 900 °C, resulting from the scattering of low-to-high wavelength heat-carrying phonons by different types of defect features in a range of nano to meso-scale dimensions in the Si80Ge20 nanostructured matrix. These include point defects, dislocations, isolated amorphous regions, nano-scale grain boundaries and more importantly, the nano to meso-scale residual porosity distributed throughout the Si80Ge20 matrix. These nanoscale multi-dimensional defect features have been characterized by employing scanning and transmission electron microscopy and correlated with the electrical and thermal transport properties, based on which the enhancement of ZT has been discussed.Despite SiGe being one of the most widely studied thermoelectric materials owing to its application in radioisotope thermoelectric generators (RTG), the thermoelectric figure-of merit (ZT) of p-type SiGe is still quite low, resulting in poor device efficiencies. In the present study, we report a substantial enhancement in ZT ~ 1.2 at 900 °C for p-type nanostructured Si80Ge20 alloys by creating several types of defect features within the Si80Ge20 nanostructured matrix in a spectrum of nano to meso

  19. New route to the fabrication of nanocrystalline diamond films

    SciTech Connect

    Varshney, Deepak Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-02-07

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production.

  20. Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons

    SciTech Connect

    Z. Zak Fang, H. Y. Sohn

    2009-03-10

    This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

  1. Synthesis and characterization of nanocrystalline and mesoporous zeolites

    NASA Astrophysics Data System (ADS)

    Petushkov, Anton

    2011-12-01

    Mesoporous aggregates of nanocrystalline zeolites with MFI and BEA frameworks have been synthesized using a one-pot and single structure directing agent. The effect of different reaction conditions, such as temperature, time, pH and water content, on the particle size, surface area and mesopore volume has been studied. Nanocrystalline and mesoporous ZSM-5, beta and Y zeolites were modified with different transition metals and the resulting single- and double metal containing catalyst materials were characterized. Nanocrystalline Silicalite-1 zeolite samples with varying particle size were functionalized with different organosilane groups and the cytotoxic activity of the zeolite nanocrystals was studied as a function of particle size, concentration, organic functional group type, as well as the type of cell line. Framework stability of nanocrystalline NaY zeolite was tested under different pH conditions. The synthesized zeolites used in this work were characterized using a variety of physico-chemical methods, including powder X-ray diffraction, Solid State NMR, nitrogen sorption, electron microscopy, Inductively Coupled Plasma -- Optical Emission Spectroscopy and X-ray Photoelectron Spectroscopy.

  2. Synthesis of Nano-Crystalline Gamma-TiAl Materials

    NASA Technical Reports Server (NTRS)

    Hales, Stephen J.; Vasquez, Peter

    2003-01-01

    One of the principal problems with nano-crystalline materials is producing them in quantities and sizes large enough for valid mechanical property evaluation. The purpose of this study was to explore an innovative method for producing nano-crystalline gamma-TiAl bulk materials using high energy ball milling and brief secondary processes. Nano-crystalline powder feedstock was produced using a Fritsch P4(TM) vario-planetary ball mill recently installed at NASA-LaRC. The high energy ball milling process employed tungsten carbide tooling (vials and balls) and no process control agents to minimize contamination. In a collaborative effort, two approaches were investigated, namely mechanical alloying of elemental powders and attrition milling of pre-alloyed powders. The objective was to subsequently use RF plasma spray deposition and short cycle vacuum hot pressing in order to effect consolidation while retaining nano-crystalline structure in bulk material. Results and discussion of the work performed to date are presented.

  3. Light emission, light detection and strain sensing with nanocrystalline graphene

    NASA Astrophysics Data System (ADS)

    Riaz, Adnan; Pyatkov, Feliks; Alam, Asiful; Dehm, Simone; Felten, Alexandre; Chakravadhanula, Venkata S. K.; Flavel, Benjamin S.; Kübel, Christian; Lemmer, Uli; Krupke, Ralph

    2015-08-01

    Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically, the light-matter interaction in graphene is of a broadband type. However, by integrating graphene into optical micro-cavities narrow-band light emitters and detectors have also been demonstrated. These devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end, we explore in this work the feasibility of replacing graphene with nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman and x-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.

  4. Fatigue stress concentration and notch sensitivity in nanocrystalline metals

    DOE PAGESBeta

    Furnish, Timothy A.; Boyce, Brad L.; Sharon, John A.; O’Brien, Christopher J.; Clark, Blythe G.; Arrington, Christian L.; Pillars, Jamin R.

    2016-03-11

    Recent studies have shown the potential for nanocrystalline metals to possess excellent fatigue resistance compared to their coarse-grained counterparts. Although the mechanical properties of nanocrystalline metals are believed to be particularly susceptible to material defects, a systematic study of the effects of geometric discontinuities on their fatigue performance has not yet been performed. In the present work, nanocrystalline Ni–40 wt%Fe containing both intrinsic and extrinsic defects were tested in tension–tension fatigue. The defects were found to dramatically reduce the fatigue resistance, which was attributed to the relatively high notch sensitivity in the nanocrystalline material. Microstructural analysis within the crack-initiation zonesmore » underneath the defects revealed cyclically-induced abnormal grain growth (AGG) as a predominant deformation and crack initiation mechanism during high-cycle fatigue. Furthermore, the onset of AGG and the ensuing fracture is likely accelerated by the stress concentrations, resulting in the reduced fatigue resistance compared to the relatively defect-free counterparts.« less

  5. Light emission, light detection and strain sensing with nanocrystalline graphene.

    PubMed

    Riaz, Adnan; Pyatkov, Feliks; Alam, Asiful; Dehm, Simone; Felten, Alexandre; Chakravadhanula, Venkata S K; Flavel, Benjamin S; Kübel, Christian; Lemmer, Uli; Krupke, Ralph

    2015-08-14

    Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically, the light-matter interaction in graphene is of a broadband type. However, by integrating graphene into optical micro-cavities narrow-band light emitters and detectors have also been demonstrated. These devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end, we explore in this work the feasibility of replacing graphene with nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman and x-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors. PMID:26207014

  6. Preparation of nanocrystalline metal oxides and intermetallic phases by controlled thermolysis of organometallic coordination polymers

    NASA Astrophysics Data System (ADS)

    Rehbein, Marcus; Epple, Matthias; Fischer, R. Dieter

    2000-06-01

    Organometallic coordination polymers of the super-Prussian blue type [(Me 3Sn) nM(CN) 6] (Me=CH 3; n=3, 4; M=Fe, Co, Ru) were subjected to thermolysis in different atmospheres (air, argon, hydrogen/nitrogen). In air, oxides were found: Fe 2O 3/SnO 2 (crystalline and nanocrystalline), Co 2SnO 4 and RuO 2. In argon and in hydrogen, the intermetallic phases FeSn 2, CoSn 2, Ru 3Sn 7 and Fe 3SnC were obtained. A detailed mechanistic study was carried out using thermogravimetry (TG), X-ray diffraction (XRD), X-ray absorption spectroscopy (EXAFS) at Fe, Co, Ru and Sn K-edges, infrared spectroscopy (IR) and elemental analysis. Below 250°C, Me 3SnCN and (CN) 2 are released, whereas above 250°C oxidation or pyrolysis leads to the corresponding oxides or intermetallic phases. Polymeric cyanides containing at least two metals have turned out to be suitable precursors to prepare well-defined oxides and intermetallic phases at comparatively low temperature.

  7. Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Janson, M. S.; Linnarsson, M. K.; Hallén, A.; Svensson, B. G.; Achtziger, N.; Unéus, L.; Lloyd Spetz, A.; Forsberg, U.

    In this paper we give a review of our recent results related to the incorporation of hydrogen (H) in silicon carbide (SiC) and its interaction with acceptor doping atoms and implantation induced defects. Hydrogen is an abundant impurity in the growth of epitaxial SiC since it is present in the precursor gases and since H2 is used as the carrier gas. High concentrations of hydrogen are indeed incorporated into highly doped p-type epi-layers and it is shown that the main source is the carrier gas. Furthermore, it is revealed that the entire substrate becomes homogeneously filled with hydrogen during growth and that this hydrogen is more thermally stable than that in the epi-layer. Incorporation of hydrogen from an H2 ambient, at temperatures considerably lower than those used for epitaxy, is also demonstrated in p-type samples coated with a catalytic metal film. This effect is most likely the cause for the increased series resistance observed in p-type SiC Schottky sensor devices using a catalytic metal gate after annealing at 600 °C in a H2 containing ambient. Hydrogen is found to passivate the acceptors Al and B by forming electrically neutral H-acceptor complexes. Unlike in Si and GaAs, the two H-acceptor complexes in SiC exhibit very different dissociation energies, suggesting that the atomic configurations of the complexes are significantly different. The migration of mobile hydrogen in the presence of externally applied, or internal built-in, electric fields further reveals that hydrogen is present as H+ in p-type SiC. Finally, the redistribution and subsequent out-diffusion of low energy implanted 1H and 2H is investigated. Two annealing phases for the redistribution are observed, and the activation energies for the processes are extracted.

  8. The role of nanoscale defect features in enhancing the thermoelectric performance of p-type nanostructured SiGe alloys.

    PubMed

    Bathula, Sivaiah; Jayasimhadri, M; Gahtori, Bhasker; Singh, Niraj Kumar; Tyagi, Kriti; Srivastava, A K; Dhar, Ajay

    2015-08-01

    Despite SiGe being one of the most widely studied thermoelectric materials owing to its application in radioisotope thermoelectric generators (RTG), the thermoelectric figure-of merit (ZT) of p-type SiGe is still quite low, resulting in poor device efficiencies. In the present study, we report a substantial enhancement in ZT∼ 1.2 at 900 °C for p-type nanostructured Si80Ge20 alloys by creating several types of defect features within the Si80Ge20 nanostructured matrix in a spectrum of nano to meso-scale dimensions during its nanostructuring, by employing mechanical alloying followed by spark plasma sintering. This enhancement in ZT, which is ∼25% over the existing state-of-the-art value for a p-type nanostructured Si80Ge20 alloy, is primarily due to its ultralow thermal conductivity of ∼2.04 W m(-1) K(-1) at 900 °C, resulting from the scattering of low-to-high wavelength heat-carrying phonons by different types of defect features in a range of nano to meso-scale dimensions in the Si80Ge20 nanostructured matrix. These include point defects, dislocations, isolated amorphous regions, nano-scale grain boundaries and more importantly, the nano to meso-scale residual porosity distributed throughout the Si80Ge20 matrix. These nanoscale multi-dimensional defect features have been characterized by employing scanning and transmission electron microscopy and correlated with the electrical and thermal transport properties, based on which the enhancement of ZT has been discussed. PMID:26138852

  9. Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

    DOE PAGESBeta

    Du, Mao -Hua; Singh, David J.; Zhang, Lijun; Li, Yuwei; Xu, Qiaoling; Ma, Yanming; Zheng, Weitao

    2016-04-19

    Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can bemore » stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. Lastly, this suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.« less

  10. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

    SciTech Connect

    Maslar JE, Hurst WS, Wang CA

    2007-04-05

    The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to have an understanding of the SSCR profile relative to the Raman probe depth. However, a priori determination of even the actual SSCR width is not always possible for GaSb under a wide range of doping levels. The primary objective of this report is to provide a convenient reference to aid in the determination of relative contributions to an observed GaSb Raman spectrum of SSCR scattering and bulk scattering for a range of excitation wavelengths, doping levels, and SSCR widths and types. Hence, Raman spectra of both n-type and p-type doped GaSb epilayers were obtained using 488 nm, 514.5 nm, 647.1 nm, and 752.55 nm excitation radiation. Both n-type and p-type doped GaSb epilayers were selected for investigation because these layers exhibit the two different SSCR types that are typically encountered with as-grown GaSb and related materials. A range of doping levels were examined for each doping type so as to examine the effects of a varying SSCR width on the observed spectra. A secondary objective of this report is to demonstrate the performance of a spectroscopic system based on 752.55 nm excitation that is sensitive to bulk carrier properties in n-type and p-type doped GaSb epilayers over a wide doping range, unlike visible wavelength-based optical systems.

  11. Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

    SciTech Connect

    Ganagona, N. Vines, L.; Monakhov, E. V.; Svensson, B. G.

    2014-01-21

    In this work, a comprehensive study on the transition of divacancy (V{sub 2}) to divacancy-oxygen (V{sub 2}O) pairs in p-type silicon has been performed with deep level transient spectroscopy (DLTS). Czochralski grown, boron doped p-type, silicon samples, with a doping concentration of 2 × 10{sup 15} cm{sup −3} and oxygen content of 7.0 ± 1.5 × 10{sup 17} cm{sup −3}, have been irradiated with 1.8 MeV protons. Isothermal annealing at temperatures in the range of 200 °C–300 °C shows a close to one-to-one correlation between the loss in the donor state of V{sub 2} and the formation of the donor state of V{sub 2}O, located at 0.23 eV above the valence band edge. A concurrent transition takes place between the single acceptor states of V{sub 2} and V{sub 2}O, as unveiled by injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Applying the theory for diffusion limited reactions, the diffusivity of V{sub 2} in the studied p-type samples is determined to be (1.5 ± 0.7) × 10{sup −3}exp[−(1.31 ± 0.03) eV/kT] cm{sup 2}/s, and this represents the neutral charge state of V{sub 2}. Further, the data seem to favor a two-stage diffusion mechanism involving partial dissociation of V{sub 2}, although a one-stage process cannot be fully excluded.

  12. Mechanochemistry of lithium nitride under hydrogen gas.

    PubMed

    Li, Z; Zhang, J; Wang, S; Jiang, L; Latroche, M; Du, J; Cuevas, F

    2015-09-14

    Hydrogen uptake during the mechanochemistry of lithium nitride under 9 MPa hydrogen pressure has been analyzed by means of in situ solid-gas absorption and ex situ X-ray diffraction (XRD) measurements. In situ hydrogenation curves show two H-sorption steps leading to an overall hydrogen uptake of 9.8 wt% H after 3 hours of milling. The milled end-products consist of nanocrystalline (∼10 nm) LiNH2 and LiH phases. The first reaction step comprises the transformation of the polymorph α-Li3N (S.G. P6/mmm) into the β-Li3N (S.G. P63/mmc) metastable phase and the reaction of the latter with hydrogen to form lithium imide: β-Li3N + H2→ Li2NH + LiH. Reaction kinetics of the first step is zero-order. Its rate-limiting control is assigned to the collision frequency between milling balls and Li3N powder. In the second absorption step, lithium imide converts to lithium amide following the reaction scheme Li2NH + H2→ LiNH2 + LiH. Reaction kinetics is here limited by one-dimensional nucleation and the growth mechanism, which, in light of structural data, is assigned to the occurrence of lithium vacancies in the imide compound. This study provides new insights into the reaction paths and chemical kinetics of light hydrogen storage materials during their mechanochemical synthesis. PMID:26234206

  13. Photoconductivity in Magnetic Field of p-Type Cadmium - Mercury - Tellurium Films Grown by Liquid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Kostyuchenko, V. Ya.; Protasov, D. Yu.; Andrusov, Yu. B.; Denisov, I. A.; Voitsekhovskii, A. V.

    2016-04-01

    Photoconductivity in a magnetic field is studied for Faraday geometry on the p-type cadmium - mercury -tellurium films grown by liquid-phase epitaxy on cadmium - zinc - tellurium substrates. From the magnetic-field dependence of the photoconductivity signal under the film illumination from the side of the substrate or from the side of free surface, different values of mobility of minority carriers (electrons) are obtained. It is shown that for the mathematical description of the photoconductivity signal in a magnetic field, two types of electrons - "fast" and "slow" electrons, as well as "heavy" holes can be used.

  14. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  15. How to Compare, Analyze, and Morph Between Crystal Structures of Different Conformations: The P-Type ATPase Example.

    PubMed

    Karlsen, Jesper L; Bublitz, Maike

    2016-01-01

    In the past 15 years, a large body of structural information on P-type ATPases has accumulated in the Protein Data Bank. The available crystal structures cover different enzymes in a variety of conformational states that are associated with the enzymatic activity of ATP-dependent ion translocation across membranes. This chapter provides an overview about the available structural information, along with some practical instructions on how to make meaningful comparisons of structures in different conformations, and how to generate morphs between series of structures, in order to analyze domain movements and structural flexibility. PMID:26695058

  16. p-type ZnO and ZnMnO by oxidation of Zn(Mn)Te films

    NASA Astrophysics Data System (ADS)

    Przedziecka, E.; Kamiska, E.; Dynowska, E.; Dobrowolski, W.; Jakiea, R.; Kopotowski, .; Sawicki, M.; Kiecana, M.; Kossut, J.

    2006-03-01

    ZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p -type conductivity with the hole concentration of 5 . 1019 cm-3 for ZnO:As and ZnO:As:N on GaAs substrates and 6 . 1017 cm-3 for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between samples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples.

  17. Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

    NASA Technical Reports Server (NTRS)

    Chen, R. T.

    1983-01-01

    Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

  18. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  19. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Sanada, Yuji

    2011-11-01

    Chromium (Cr)-aqueous-solution-rinsed and/or hydrofluoric acid (HF)-solution-dipped p-type silicon (Si) (001) wafer surfaces are investigated by the frequency-dependent alternating current (AC) surface photovoltage (SPV) method. At the Cr(OH)3/p-type Si interface, in principle, a Schottky barrier could not possibly be generated. The Cr ion (Cr3+) is considered to forcibly deprive a p-type Si substrate of electrons during metallization (Cr3++3e-→Cr). Thus, at an early stage of air exposure, a positive fixed oxide charge may be compensated for by electrons, indicating the disappearance of AC SPV. With air exposure time, AC SPV emerges again and increases gradually in a Cr-deposited p-type Si(001) surface. This is because the native oxide between the Cr atom layer and the p-type Si substrate grows with time. As a result, a positive fixed oxide charge exceeds the overall charge state of the Cr-deposited p-type Si surface. Thus, AC SPV appears again and gradually increases with the fixed oxide charge in p-type Si. The saturated value is in a good agreement with that of the HF aqueous-solution-dipped p-type Si surface.

  20. Hot Superplastic Powder Forging for Transparent nanocrystalline Ceramics

    SciTech Connect

    Cannon, W. Roger

    2006-05-22

    The program explored a completely new, economical method of manufacturing nanocrystalline ceramics, Hot Superplastic Powder Forging (HSPF). The goal of the work was the development of nanocrystalline/low porosity optically transparent zirconia/alumina. The high optical transparency should result from lack of grain boundary scattering since grains will be smaller than one tenth the wavelength of light and from elimination of porosity. An important technological potential for this process is manufacturing of envelopes for high-pressure sodium vapor lamps. The technique for fabricating monolithic nanocrystalline material does not begin with powder whose particle diameter is <100 nm as is commonly done. Instead it begins with powder whose particle diameter is on the order of 10-100 microns but contains nanocrystalline crystallites <<100 nm. Spherical particles are quenched from a melt and heat treated to achieve the desired microstructure. Under a moderate pressure within a die or a mold at temperatures of 1100C to 1300C densification is by plastic flow of superplastic particles. A nanocrystalline microstructure results, though some features are greater than 100nm. It was found, for instance, that in the fully dense Al2O3-ZrO2 eutectic specimens that a bicontinuous microstructure exists containing <100 nm ZrO2 particles in a matrix of Al2O3 grains extending over 1-2 microns. Crystallization, growth, phase development and creep during hot pressing and forging were studied for several compositions and so provided some details on development of polycrystalline microstructure from heating quenched ceramics.