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Sample records for p-type silicon material

  1. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established. PMID:19318259

  2. Method of mitigating titanium impurities effects in p-type silicon material for solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M. (Inventor)

    1980-01-01

    Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

  3. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  4. Transport through a single donor in p-type silicon

    NASA Astrophysics Data System (ADS)

    Miwa, J. A.; Mol, J. A.; Salfi, J.; Rogge, S.; Simmons, M. Y.

    2013-07-01

    Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ˜1 nm below the surface. The ability to image individual dopants combined with scanning tunnelling spectroscopy allows us to directly study the transport mechanism through the donor. We show that for a single P donor, transport is dominated by a minority carrier recombination process with the surrounding p-type matrix. The understanding gained will underpin future studies of atomically precise mapping of donor-donor interactions in silicon.

  5. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  6. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  7. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  8. Development of improved p-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Mclane, George; Wood, Charles; Vandersande, Jan; Raag, Valvo; Heshmatpour, Ben

    1987-01-01

    Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

  9. Laser induced lifetime degradation in p-type crystalline silicon

    SciTech Connect

    Ametowobla, M.; Bilger, G.; Koehler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  10. Laser induced lifetime degradation in p-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Ametowobla, M.; Bilger, G.; Köhler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime τ ≈ 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  11. Ferromagnetic states of p-type silicon doped with Mn

    NASA Astrophysics Data System (ADS)

    Yunusov, Z. A.; Yuldashev, Sh. U.; Igamberdiev, Kh. T.; Kwon, Y. H.; Kang, T. W.; Bakhadyrkhanov, M. K.; Isamov, S. B.; Zikrillaev, N. F.

    2014-05-01

    In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic state with a Curie temperature above room temperature, and that ferromagnetism was due to the Mn x B y ferromagnetic clusters. The samples with a moderate concentration of Mn at low temperatures revealed a ferromagnetic state that was mediated by carriers (holes). The samples demonstrated the anomalous Hall effect at temperatures below 100 K and had a negative magneto-resistivity peak at a temperature close to the Curie temperature. The thermal diffusivity measurements demonstrated the existence of a second-order phase transition in the samples with a moderate Mn concentration. The specific heat's critical exponent α = 0.5, determined from the thermal diffusivity measurements, confirmed the long-range nature of the magnetic exchange interaction in these samples.

  12. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    NASA Astrophysics Data System (ADS)

    Goyal, Prabal; Hong, Junegie; Haddad, Farah; Maurice, Jean-Luc; Cabarrocas, Pere Roca i.; Johnson, Erik

    2016-01-01

    The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm) and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  13. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    SciTech Connect

    Lee, C.H.; Lim, K.S.

    1998-01-01

    A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B{sub 2}H{sub 6} and C{sub 2}H{sub 4}. By increasing the boron doping ratio (B{sub 2}H{sub 6}/C{sub 2}H{sub 4}) from 0 to 12000 ppm, the dark conductivity increased from {approximately}10{sup {minus}9} to {approximately}10{sup {minus}7} S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3{times}10{sup {minus}8} S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-{Angstrom}-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 {Angstrom})/p-a-SiC (40 {Angstrom}) double p-layer structure. The thin ({lt}15 {Angstrom}) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. {copyright} {ital 1998 American Institute of Physics.}

  14. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    SciTech Connect

    Sun, Chang Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  15. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  16. Novel method of separating macroporous arrays from p-type silicon substrate

    NASA Astrophysics Data System (ADS)

    Bobo, Peng; Fei, Wang; Tao, Liu; Zhenya, Yang; Lianwei, Wang; Fu, Ricky K. Y.; Chu, Paul K.

    2012-04-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

  17. Suppression of hydrogen diffusion at the hydrogen-induced platelets in p-type Czochralski silicon

    SciTech Connect

    Huang, Y.L.; Ma, Y.; Job, R.; Fahrner, W.R.

    2005-03-28

    Hydrogen diffusion in p-type Czochralski silicon is investigated by combined Raman spectroscope, scanning electron microscope, and spreading resistance probe measurements. Exposure of silicon wafers to rf hydrogen plasma results in the formation of platelets. The increase of hydrogenation duration leads to the growth of the platelets and the reduction of the hydrogen diffusivity. The large platelets grow faster than the small ones. The growth of the platelets is based on the capture of hydrogen. The dependence of the hydrogen diffusivity upon the average size of the platelets suggests that the indiffusion of hydrogen is suppressed by the platelets.

  18. Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy

    NASA Astrophysics Data System (ADS)

    Zamanipour, Zahra; Krasinski, Jerzy S.; Vashaee, Daryoosh

    2013-04-01

    Boron precipitation process and its effect on electronic properties of p-type bulk nanostructured silicon germanium (Si0.8Ge0.2) compared with large grain polycrystalline Si0.8Ge0.2 have been studied. The structures were synthesized and their thermoelectric properties were measured versus temperature during heating and cooling cycles. The experimental data showed stronger temperature variation of Seebeck coefficient, carrier concentration, and conductivity in the nanostructured Si0.8Ge0.2 compared with the polycrystalline form indicating stronger boron precipitation in this structure. The electrical properties of both samples were calculated using a multi-band semi-classical model. The theoretical calculations confirm that the increase of boron precipitation in the nanostructured Si0.8Ge0.2 is responsible for its higher thermal instability. Since the thermoelectric properties of the nanostructured sample degrade as a result of thermal cycling, the material is appropriate only for continuous operation at high temperature without cooling.

  19. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  20. High-temperature elastic moduli of bulk nanostructured n - and p -type silicon germanium

    NASA Astrophysics Data System (ADS)

    Gladden, J. R.; Li, G.; Adebisi, R.; Firdosy, S.; Caillat, T.; Ravi, V.

    2010-07-01

    Resonant ultrasound spectroscopy (RUS) has been used to measure the elastic moduli of n - and p -type doped polycrystalline bulk nanostructured silicon germanium alloys at elevated temperatures. A direct contact RUS transducer system with a working temperature range up to 900 K was successfully constructed for these measurements. For higher temperatures (up to 1300 K), we employed a traditional buffer rod RUS system. Experimental results show the Young’s and shear moduli of p -type SiGe alloys monotonically decrease with increasing temperatures in the 300-1200 K range. The n -type samples show a marked stiffening beginning at 675 K which does not repeat upon cooling or subsequent reheating. We attribute the stiffening of the n -type samples to the thermally activated precipitation of the phosphorous dopant. Electrical resistivity and Seebeck coefficient data are also presented for both types of SiGe which support this conclusion.

  1. Absence of positronium formation in clean buried nanocavities in p-type silicon

    SciTech Connect

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Egger, W.; Sperr, P.; Koegel, G.

    2005-06-15

    Buried nanocavities at about 350 nm depth in Si were produced by thermal treatment of He implanted p-type (100) Si. The internal surfaces of the nanocavities were found free of impurity decorations by examining the high-momentum part of the Doppler-broadened positron annihilation spectra. Positron lifetime measurements with a pulsed slow positron beam show neither a short lifetime (125-150 ps) ascribable to parapositronium nor a longer lifetime (2-4 ns) ascribable to pick-off annihilation of orthopositronium. The lifetime of positrons trapped into nanocavities was found to be about 500 ps. The absence of positronium formation could be explained by an insufficient electron density and a lack of electron states in the band gap at the nanocavities internal surfaces produced in the p-type silicon.

  2. Direct Measurement of Electron Beam Induced Currents in p-type Silicon

    SciTech Connect

    Han, M.G.; Zhu, Y.; Sasaki, K.; Kato, T.; Fisher, C.A.J.; Hirayama, T.

    2010-08-01

    A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale.

  3. Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

    PubMed

    Yang, Chen; Barrelet, Carl J; Capasso, Federico; Lieber, Charles M

    2006-12-01

    We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems. PMID:17163733

  4. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    SciTech Connect

    Inglese, Alessandro Savin, Hele; Lindroos, Jeanette

    2015-08-03

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  5. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Grant, Nicholas; Lennon, Alison

    2014-12-01

    Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO2) was investigated. The anodic SiO2 was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3-5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO2 formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance-voltage measurements demonstrated a very low positive charge density of 3.4 × 1011 cm-2 and a moderate density of interface states of 6 × 1011 eV-1 cm-2. This corresponded to a silicon surface recombination velocity of 62 cm s-1, which is comparable with values reported for other anodic SiO2 films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10-10 and 1.6 × 10-9 A cm-2 at 1 and -1 V, respectively, was measured for LIA SiO2 suggesting its potential application as insulation layer in IBC solar cells and a barrier for potential induced degradation.

  6. Scanning electrochemical microscopy investigations of monolayers bound to p-type silicon substrates.

    PubMed

    Ghilane, Jalal; Hauquier, Fanny; Fabre, Bruno; Hapiot, Philippe

    2006-09-01

    p-Si type electrodes modified with different organic monolayers were investigated by reaction with radical anion and cation electrogenerated at a microelectrode operating in the configuration of a scanning electrochemical microscope. The method proves to be a convenient tool for investigating both the quality and the redox properties of the layer as previously demonstrated on metallic electrodes especially when the sample cannot be electrically connected. Approach curves recorded with the different mediators were used to investigate the electron-transfer rates across alkyl monolayers bound to p-type silicon substrates. Preliminary results indicate that the interfacial electron transfer occurs via electron tunneling through the organic layer as generally described for SAMs grafted on gold electrodes. PMID:16944879

  7. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  8. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  9. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  10. Evidence for an iron-hydrogen complex in p-type silicon

    NASA Astrophysics Data System (ADS)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  11. Evidence for an iron-hydrogen complex in p-type silicon

    SciTech Connect

    Leonard, S. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-20

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  12. High performance p-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2005-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  13. Aluminum-natural oxide-P type silicon /MIS/ solar cells

    NASA Astrophysics Data System (ADS)

    Badura, E.; Zdanowicz, W.

    1980-12-01

    MIS (metal-interfacial region-semiconductor) solar cells are attractive because of their relatively high conversion efficiency. Their performance, however, is strongly affected by device preparation. Two methods are described for preparing Al - natural SiO - p-type Si cells which exhibit high photovoltaic values. The first, involving a 'nonsintered oxide' process, entails etching the active silicon surfaces in HF acid and exposing them to air at room temperature for 48 hours. The second method differs from the first only in that it requires the additional step of sintering the oxidized surfaces in a vacuum at about 500 C. In both cases, a semitransparent Al film is then applied to the oxide, after which an Al grid electrode and 70-nm SiOx antireflection coatings are deposited on the device. Measured against both the nonsintered cell and the Schottky barrier cell, the sintered assembly shows the highest open-circuit voltage (0.46-0.492), the highest fill factor (0.66-0.73), and the most efficient dark parameters.

  14. RF performances of inductors integrated on localized p+-type porous silicon regions

    NASA Astrophysics Data System (ADS)

    Capelle, Marie; Billoué, Jérôme; Poveda, Patrick; Gautier, Gaël

    2012-09-01

    To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.

  15. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  16. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  17. High performance P-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2002-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  18. Silicone azide fireproof material

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

  19. Temperature driven p-n-p type conduction switching materials: current trends and future directions.

    PubMed

    Guin, Satya N; Biswas, Kanishka

    2015-04-28

    Modern technological inventions have been going through a "renaissance" period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field. PMID:25812630

  20. Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon

    NASA Technical Reports Server (NTRS)

    Weisz, S. Z.; Porras, A. Ramirez; Resto, O.; Goldstein, Y.; Many, A.; Savir, E.

    1997-01-01

    The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.

  1. Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodes

    SciTech Connect

    Dominey, R.N.; Lewis, N.S.; Bruce, J.A.; Bookbinder, D.C.; Wrighton, M.S.

    1982-01-27

    The improvement of H/sub 2/ evolution from two different types of catalytic p-type photocathode surfaces has been examined. p-Type Si has been platinized by phtotelectrochemically plating Pt(0) onto the Si surface. Such a photocathode shows significant improvement (compared to naked p-type Si) for photochemical H/sub 2/ evolution with respect to output photovoltage, fill factor, and overall efficiency. Such photocathodes having an optimun amount of Pt(0) give a pH-dependent output voltage with respect to the H/sub 2/O/H/sub 2/ couple, but the dependence is not a simple 59-mV/pH dependence. No pH dependence would be expected if Pt(0) formed a Schottky barrier when plated onto p-type Si. A second kind of H/sub 2/ evolution catalyst has been confined to the surface of p-type Si. Polymeric quantities of an electroactive N,N'-dialkyl-4,4'-bipridinium reagent, (PQ/sup 2 +/.)/sub n/, have been confined to the surface. The Br/sup -/ counterions of the polymer are then exchanged by PtCl/sub 6//sup 2 -/. Photoreduction then yields Pt(0) dispersed in the polymer. Such a surface is again significantly improved compared to naked p-type Si with respect to H/sub 2/ evolution. A comparison of the naked p-Si, the simply platinized, and the (PQ/sup 2 +//sup ///sup +//sub n/.nPt(0))/sub surf./ system is made and contrasted to the expected behavior of an external Schottky barrier photocell driving an electrolysis cell with a Pt cathode. Experiments with n-type MoS/sub 2/, n-type Si, Pt, Au, and W cathodes functionalized with the (PQ/sup 2 +//sup ///sup +/.)sub n/.nPt(0))/sub surf./ system compared to the same surface directly platinized confirm an important difference in the mechanism of H/sub 2/ evolution catalysis for the two surface catalyst systems. p-Type Si modified with optimum amounts of Pt(0) by direct platinization appears to give improved H/sub 2/ evolution efficiency by a mechanism where the Pt(0) serves as a catalyst that does not alter the interface energetics of the

  2. Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

    NASA Astrophysics Data System (ADS)

    Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, J.; Wan, Y.

    2015-02-01

    We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τbulk was found to increase from ˜500 μs to ˜1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3 < Eann < 0.7 eV. When the annihilated samples were phosphorus gettered at 880 °C or subject to 0.2 sun illumination for 24 h, τbulk was found to degrade. However, when the samples were subsequently annealed at temperatures between 250 and 400 °C, the defect could be re-annihilated. The experimental results suggest that the defect limiting the lifetime in the p-type FZ silicon is not related to fast diffusing metallic impurities but rather to a lattice-impurity or an impurity-impurity metastable defect.

  3. Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinning

    SciTech Connect

    Bocarsly, A.B.; Bookbinder, D.C.; Dominey, R.N.; Lewis, N.S.; Wrighton, M.S.

    1980-05-21

    Studies of p- and n-type Si electrodes are reported which show that semiconducting Si electrode surfaces do not allow efficient H/sub 2/ evolution in the dark (n type) or upon illumination with band gap or greater energy light (p type). The key experiment is that N,N'-dimethyl-4,4'-bipyridinium (PQ/sup 2 +/) is reversibly reduced at n-type Si in aqueous media at a pH where H/sub 2/ should be evolved at nearly the same potential, but no H/sub 2/ evolution current is observable. The PQ/sup 2+/+/.system may be useful as an electron-transfer mediator, since PQ/sup +/.can be used to effect generation of H/sub 2/ from H/sub 2/O using a heterogeneous catalyst. The PQ/sup +/.can be produced in an uphill sense by illumination of p-type Si in aqueous solutions. Studies of p-type Si in nonaqueous solvents show that PQ/sup 2 +/, PQ/sup +/., Ru(bpy)/sub 3//sup 2 +/, Ru(bpy)/sub 3//sup +/, and Ru(bpy)/sub 3//sup 0/ are all reducible upon illumination of the p-type Si. Interestingly, each species can be photoreduced at a potential approx. 500 mV more positive than at a reversible electrode in the dark. This result reveals that a p-type Si-based photoelectrochemical cell based on PQ/sup 2+/+/., PQ/sup +/l/sup 0//, Ru(bpy)/sub 3//sup 2+/+/, Ru(bpy)/sub 3//sup +/0/, or Ru(bpy)/sub 3//sup 0/-/ would all yield a common output photovoltage, despite the fact that the formal potentials for these couples vary by more than the band gap (1.1 V) of the photocathode. These data support the notion that p-type Si exhibits Fermi level pinning under the conditions employed.Surface chemistry is shown to be able to effect changes in interface kinetics for electrodes exhibiting Fermi level pinning.

  4. Macropore formation in p-type silicon: toward the modeling of morphology

    PubMed Central

    2014-01-01

    The formation of macropores in silicon during electrochemical etching processes has attracted much interest. Experimental evidences indicate that charge transport in silicon and in the electrolyte should realistically be taken into account in order to be able to describe the macropore morphology. However, up to now, none of the existing models has the requested degree of sophistication to reach such a goal. Therefore, we have undertaken the development of a mathematical model (phase-field model) to describe the motion and shape of the silicon/electrolyte interface during anodic dissolution. It is formulated in terms of the fundamental expression for the electrochemical potential and contains terms which describe the process of silicon dissolution during electrochemical attack in a hydrofluoric acid (HF) solution. It should allow us to explore the influence of the physical parameters on the etching process and to obtain the spatial profiles across the interface of various quantities of interest, such as the hole concentration, the current density, or the electrostatic potential. As a first step, we find that this model correctly describes the space charge region formed at the silicon side of the interface. PMID:25386103

  5. Macropore formation in p-type silicon: toward the modeling of morphology.

    PubMed

    Slimani, Amel; Iratni, Aicha; Henry, Hervé; Plapp, Mathis; Chazalviel, Jean-Noël; Ozanam, François; Gabouze, Noureddine

    2014-01-01

    The formation of macropores in silicon during electrochemical etching processes has attracted much interest. Experimental evidences indicate that charge transport in silicon and in the electrolyte should realistically be taken into account in order to be able to describe the macropore morphology. However, up to now, none of the existing models has the requested degree of sophistication to reach such a goal. Therefore, we have undertaken the development of a mathematical model (phase-field model) to describe the motion and shape of the silicon/electrolyte interface during anodic dissolution. It is formulated in terms of the fundamental expression for the electrochemical potential and contains terms which describe the process of silicon dissolution during electrochemical attack in a hydrofluoric acid (HF) solution. It should allow us to explore the influence of the physical parameters on the etching process and to obtain the spatial profiles across the interface of various quantities of interest, such as the hole concentration, the current density, or the electrostatic potential. As a first step, we find that this model correctly describes the space charge region formed at the silicon side of the interface. PMID:25386103

  6. Temperature Dependent Tensile Fracture Stress of n- and p-Type Filled-Skutterudite Materials

    SciTech Connect

    Salvador, James R.; Yang, Jihui; Wereszczak, Andrew A; Wang, Hsin; Cho, Jung Y

    2011-01-01

    While materials with excellent thermoelectric performance are most desirable for higher heat to electrical energy conversion efficiency, thermoelectric materials must also be sufficiently mechanically robust to withstand the large number of thermal cycles and vibrational stresses likely to be encountered while in service, particularly in automotive applications. Further these TE materials should be composed of non-toxic and naturally abundant constituent elements and be available as both n- and p-type varieties. Skutterudite based thermoelectric materials seemingly fit this list of criteria. In this contribution we report on the synthesis, tensile fracture strengths, low temperature electrical and thermal transport properties, and coefficients of thermal expansion (CTE), of the n-type skutterudite La{sub 0.05({+-}0.01)}Ba{sub 0.07({+-}0.04)}Yb{sub 0.08({+-}0.02)}Co{sub 4.00({+-}0.01)}Sb{sub 12.02({+-}0.03)} and the p-type Ce{sub 0.30({+-}0.02)}Co{sub 2.57({+-}0.02)}Fe{sub 1.43({+-}0.02)}Sb{sub 11.98({+-}0.03)}. Both materials have tensile fracture strengths that are temperature independent up to 500 C, and are in the range of {approx}140 MPa as measured by a three point bend flexure test fixture described herein. The CTE's were measured by dual rod dilatometry and were determined to be 10.3 ppm/C for the n-type material and 11.5 ppm/C for p-type up to 450 C.

  7. Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, Xinyu; Wan, Yimao; Bullock, James; Allen, Thomas; Cuevas, Andres

    2016-08-01

    This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ˜10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

  8. High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

    NASA Astrophysics Data System (ADS)

    Fernández, J.; Godignon, P.; Berberich, S.; Rebollo, J.; Brezeanu, G.; Millán, J.

    1996-09-01

    This paper presents the high frequency electrical characteristics and modelling of Al/SiO 2/ p-type 6HSiC structures. The oxide was thermally grown under dry conditions. Capacitance and conductance vs bias and frequency measurements have been performed in daylight and exposing the capacitors to u.v. light. The experimental Cm- Vg and Gm- Vg characteristics show hysteresis effects, which are more important when the samples are exposed to 254 nm u.v. light. This behaviour can be explained in terms of interface traps. The MOS structure modelling is based on an interface trap model in which the interface trap levels are considered to be continuously distributed in the SiC bandgap and only charge exchange between interface trap levels and the SiC bands is allowed. From this formulation and from the Gm- f characteristics, the interface state density and the interface trap time constant have been determined.

  9. Development of radiation hard edgeless detectors with current terminating structure on p-type silicon

    NASA Astrophysics Data System (ADS)

    Verbitskaya, E.; Eremin, V.; Ruggiero, G.

    2011-12-01

    The development of edgeless Si detectors was stimulated by the tasks of the total pp cross-section study in the TOTEM experiment at the Large Hadron Collider at CERN. For this, the dead region at the detector diced side should be reduced below 50 μm. This requirement is successfully realized in edgeless Si detectors with current terminating structure (CTS), which are now operating at LHC. The development of the experiment and future LHC upgrade need the elaboration of radiation hard version of edgeless Si detectors. The current investigation represents an extension in understanding on edgeless detectors operation and development of a new issue - edgeless detectors with CTS on p-type Si.

  10. Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

    SciTech Connect

    Ganagona, N. Vines, L.; Monakhov, E. V.; Svensson, B. G.

    2014-01-21

    In this work, a comprehensive study on the transition of divacancy (V{sub 2}) to divacancy-oxygen (V{sub 2}O) pairs in p-type silicon has been performed with deep level transient spectroscopy (DLTS). Czochralski grown, boron doped p-type, silicon samples, with a doping concentration of 2 × 10{sup 15} cm{sup −3} and oxygen content of 7.0 ± 1.5 × 10{sup 17} cm{sup −3}, have been irradiated with 1.8 MeV protons. Isothermal annealing at temperatures in the range of 200 °C–300 °C shows a close to one-to-one correlation between the loss in the donor state of V{sub 2} and the formation of the donor state of V{sub 2}O, located at 0.23 eV above the valence band edge. A concurrent transition takes place between the single acceptor states of V{sub 2} and V{sub 2}O, as unveiled by injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Applying the theory for diffusion limited reactions, the diffusivity of V{sub 2} in the studied p-type samples is determined to be (1.5 ± 0.7) × 10{sup −3}exp[−(1.31 ± 0.03) eV/kT] cm{sup 2}/s, and this represents the neutral charge state of V{sub 2}. Further, the data seem to favor a two-stage diffusion mechanism involving partial dissociation of V{sub 2}, although a one-stage process cannot be fully excluded.

  11. Silicone breast implant materials.

    PubMed

    Daniels, A U

    2012-01-01

    This opinion article has been written on request because of the recent public controversy over silicone breast implants produced by a now-defunct company, Poly Implant Prosthese (PIP) in France. More than 300,000 PIP devices have been implanted. The purposes of my article are to (1.) provide a general overview of silicone breast implant materials, (2.) to describe the general safety of these materials as reported to date, and (3.) to summarise current publicly available information about these aspects of the PIP prostheses. The materials covered are the silicone rubber from which the implant shells are made and the silicone gel used to fill the shell. The materials safety issues are biocompatibility (especially of the gel) and biodurability of the shell. The literature reviewed indicates that biocompatibility is not an issue with other current generation implants. However, biodurability is. A rough estimate of implant shell rupture rate is ~10+% at 10 years. Information is still emerging about the PIP implants. Initial regulatory disclosures suggest the PIP implants may have both biocompatibility and biodurability problems. They also suggest that PIP implants may have been produced using silicone materials not certified as medical grade. Governmental health and regulatory agencies are just now in the process of deciding what actions should be taken to protect patients. PMID:22826101

  12. On the recombination behaviour of iron in moderately boron-doped p-type silicon

    NASA Astrophysics Data System (ADS)

    Walz, D.; Joly, J.-P.; Kamarinos, G.

    1996-04-01

    The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level at E v +0.1 eV and the donor level of FeB pairs at E c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014 1016 cm-3 supposing the E c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

  13. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    NASA Astrophysics Data System (ADS)

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO3 system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO3 concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag+ ions concentrations are too high. The deposition behaviors of Ag+ ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon.

  14. Thermal and electromechanical characterization of top-down fabricated p-type silicon nanowires

    NASA Astrophysics Data System (ADS)

    Bosseboeuf, Alain; Allain, Pierre Etienne; Parrain, Fabien; Le Roux, Xavier; Isac, Nathalie; Jacob, Serge; Poizat, Alexis; Coste, Philippe; Maaroufi, Seiffedine; Walther, Arnaud

    2015-01-01

    In this paper we report thermal conductivity and piezoresistivity measurements of top-down fabricated highly boron doped (NA = 1.5 × 1019 cm-3) suspended Si nanowires. These measurements were performed in a cryogenic probe station respectively by using the 3 omega method and by in situ application of a longitudinal tensile stress to the nanowire under test with a direct four point bending of the Si nanowire die. Nanowires investigated have a thickness of 160 nm, a width in the 80-260 nm range and a length in the 2.5-5.2 μm range. We found that for these geometries, thermal conduction still obeys Fourier’s law and that, as expected, the thermal conductivity is largely reduced when the nanowires width is shrunk, but, to a lower extent than published values for nanowires grown by vapor-liquid-solid (VLS) processes. While a large giant piezoresistance effect was evidenced by various authors when a static stress is applied, we only observed a limited nanowire size dependence of the piezoresistivity in our experiments where a dynamical mechanical loading is applied. This confirms that the giant piezoresistance effect in unbiased Si nanowires is not an intrinsic bulk effect but is dominated by surface related effects in agreement with the piezopinch effect model. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam

  15. Silicon dendritic web material

    NASA Technical Reports Server (NTRS)

    Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

    1982-01-01

    The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

  16. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces

    SciTech Connect

    Bock, Robert; Schmidt, Jan; Brendel, Rolf

    2008-08-15

    The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p{sup +} regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 {mu}m) and line networks of self-assembled nanostructures (lateral dimension of {<=}50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of {<=}7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of {approx}30 nm) are found within the bulk of the self-assembled line networks.

  17. Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

    NASA Astrophysics Data System (ADS)

    Muaz, A. K. M.; Hashim, U.; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-01

    In this paper, sol-gel method spin coating technique is adopted to prepare nanoparticles titanium dioxide (TiO2) thin films. The prepared TiO2 sol was synthesized using titanium butoxide act as a precursor and subjected to deposited on the p-type silicon oxide (p-SiO2) and glass slide substrates under room temperature. The effect of different alcoholic solvents of methanol and ethanol on the structural, morphological, optical and electrical properties were systematically investigated. The coated TiO2 thin films were annealed in furnace at 773 K for 1 h. The structural properties of the TiO2 films were examined with X-ray Diffraction (XRD). From the XRD analysis, both solvents showing good crystallinity with anatase phase were the predominant structure. Atomic Force Microscopy (AFM) was employed to study the morphological of the thin films. The optical properties were investigated by Ultraviolet-visible (UV-Vis) spectroscopy were found that ethanol as a solvent give a higher optical transmittance if compare to the methanol solvent. The electrical properties of the nanoparticles TiO2 thin films were measured using two-point-probe technique.

  18. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.

    PubMed

    Xian, Xiaojun; Yan, Kai; Zhou, Wei; Jiao, Liying; Wu, Zhongyun; Liu, Zhongfan

    2009-12-16

    We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics. PMID:19923654

  19. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material

    NASA Astrophysics Data System (ADS)

    Xian, Xiaojun; Yan, Kai; Zhou, Wei; Jiao, Liying; Wu, Zhongyun; Liu, Zhongfan

    2009-12-01

    We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics.

  20. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    NASA Astrophysics Data System (ADS)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  1. Silicon material task review

    NASA Technical Reports Server (NTRS)

    Lorenz, J. H.

    1986-01-01

    The objectives of the Flat-plate Solar Array (FSA) Project Silicon Material Task are to evaluate technologies, new and old; to develop the most promising technologies; to establish practicality of the processes to meet production, energy use, and economic criteria; and to develop an information base on impurities in polysilicon and to determine their effects on solar cell performance. The approach involves determining process feasibility, setting milestones for the forced selection of the processes, and establishing the technical readiness of the integrated process.

  2. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  3. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  4. Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement.

    PubMed

    Yang, Yongliang; Li, Xinxin

    2011-01-01

    The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO(2) interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis. PMID:21135460

  5. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates

    SciTech Connect

    Lenshin, A. S. Kashkarov, V. M.; Seredin, P. V.; Spivak, Yu. M.; Moshnikov, V. A.

    2011-09-15

    The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates.

  6. Silicone Cerenkov-Radiator Material

    NASA Technical Reports Server (NTRS)

    Balasubrahmanyan, V.; Ormes, J. F.; Streitmatter, R. E.

    1984-01-01

    Dyes enhance visible output. Three fluorescent dyes combine to increase output of silicone material that normally has low yield of visible Cerenkov radiation by converting large amount of available ultraviolet photons into visible light.

  7. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    SciTech Connect

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  8. Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

    NASA Astrophysics Data System (ADS)

    Kato, Keiko; Oguri, Katsuya; Sanada, Haruki; Tawara, Takehiko; Sogawa, Tetsuomi; Gotoh, Hideki

    2015-09-01

    We determine phonon decay rate by measuring the temperature dependence of coherent phonons in p-type Si under Fano resonance, where there is interference between the continuum and discrete states. As the temperature decreases, the decay rate of coherent phonons decreases, whereas that evaluated from the Raman linewidth increases. The former follows the anharmonic decay model, whereas the latter does not. The different temperature dependences of the phonon decay rate of the two methods originate from the way that the continuum state, which originates from the Fano resonance, modifies the time- and frequency-domain spectra. The observation of coherent phonons is useful for evaluating the phonon decay rate free from the interaction with the continuum state and clarifies that the anharmonic decay is dominant in p-type Si even under Fano resonance.

  9. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    PubMed

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  10. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  11. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field. PMID:27378257

  12. Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Liu, AnYao; Phang, Sieu Pheng; Rougieux, Fiacre E.; Macdonald, Daniel

    2015-08-01

    Significant reductions in interstitial iron (Fei) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250 °C-700 °C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fei concentrations were much less significant. The precipitation of Fei is ruled out as a possible explanation for the significant reductions. The hydrogen passivation of Fei, which is the complexing of monatomic H and isolated Fei forming a recombination-inactive hydride, is proposed as the most probable model to explain the reductions. Under the assumption that the reduction is caused by the hydrogenation of Fei, the reactants' charge states in the hydrogenation reaction are determined by two independent approaches. In the first approach, illumination is found to have a small but detectible impact on the reaction kinetics in the lower temperature range. The dominating reactants' charge states are concluded to be Fe0 + H+ as revealed by modelling the injection-dependent charge states of isolated Fei and monatomic H. In the second approach, the reaction kinetics are fitted with the Arrhenius equation over a large temperature range of 250 °C-700 °C. A reasonable fit is only obtained when assuming the reacting charge states are Fe0 + H+. This supports the conclusion on the reacting charge states and also gives a value of the activation energy of hydrogenation in the 0.7-0.8 eV range.

  13. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    SciTech Connect

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  14. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    NASA Astrophysics Data System (ADS)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  15. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    SciTech Connect

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  16. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    NASA Astrophysics Data System (ADS)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-01

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  17. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

    SciTech Connect

    Ivanov, A. M.; Kotina, I. M.; Lasakov, M. S.; Strokan, N. B.; Tuhkonen, L. M.

    2010-08-15

    The state of the interface between p-silicon and a nanometer-thick insulator is analyzed. DLTS spectra, obtained with deep centers in the bulk of the structure and its surface states recharged, are examined. The nature of the noise as a function of the reverse bias is determined for evaluating the possibility of using the structure as a nuclear radiation detector. A conclusion is drawn that the barrier used in the structure has a higher quality when nanometer-thick aluminum nitride films are deposited by dc, rather than ac, magnetron sputtering.

  18. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    NASA Astrophysics Data System (ADS)

    Calderini, G.; Bagolini, A.; Bomben, M.; Boscardin, M.; Bosisio, L.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2014-11-01

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  19. Origins of the p-Type Nature and Cation Deficiency in Cu2O and Related Materials

    SciTech Connect

    Raebiger, H.; Lany, S.; Zunger, A.

    2007-01-01

    While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and In{sub 2}O{sub 3} are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is Cu{sub 2}O. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why the Cu{sup (I)}(d{sup 10}) oxide-based materials are both p-type and naturally cation-deficient, and why cation vacancies lead to delocalized, conductive states, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.

  20. Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

    SciTech Connect

    Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

    1985-02-01

    Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

  1. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

    SciTech Connect

    Liu, Yanhong; Li, La; Wang, Song; Gao, Ping; Pan, Lujun; Zhang, Jialiang; Zhou, Peng; Li, Jinhua; Weng, Zhankun

    2015-02-09

    In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

  2. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials.

    PubMed

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-01-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm(-2) at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability. PMID:26330371

  3. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-09-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ~1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm-2 at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability.

  4. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

    PubMed Central

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-01-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron–phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm−2 at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability. PMID:26330371

  5. Thick-film materials for silicon photovoltaic cell manufacture

    NASA Technical Reports Server (NTRS)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  6. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  7. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Kim, Sun-Jae; Mo, Yeon-Gon; Kim, Hye-Dong; Han, Min-Koo

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (ΔVTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (ΔVTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  8. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Sung-Hwan Choi,; Sun-Jae Kim,; Yeon-Gon Mo,; Hye-Dong Kim,; Min-Koo Han,

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (Δ VTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (Δ VTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  9. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    NASA Astrophysics Data System (ADS)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-07-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime (τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  10. Material-induced shunts in multicrystalline silicon solar cells

    SciTech Connect

    Breitenstein, O. Bauer, J.; Rakotoniaina, J. P.

    2007-04-15

    By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

  11. Silicon mitigates heavy metal stress by regulating P-type heavy metal ATPases, Oryza sativa low silicon genes, and endogenous phytohormones

    PubMed Central

    2014-01-01

    Background Silicon (Si) application has been known to enhance the tolerance of plants against abiotic stresses. However, the protective mechanism of Si under heavy metals contamination is poorly understood. The aim of this study was to assess the role of Si in counteracting toxicity due to cadmium (Cd) and copper (Cu) in rice plants (Oryza sativa). Results Si significantly improved the growth and biomass of rice plants and reduced the toxic effects of Cd/Cu after different stress periods. Si treatment ameliorated root function and structure compared with non-treated rice plants, which suffered severe root damage. In the presence of Si, the Cd/Cu concentration was significantly lower in rice plants, and there was also a reduction in lipid peroxidation and fatty acid desaturation in plant tissues. The reduced uptake of metals in the roots modulated the signaling of phytohormones involved in responses to stress and host defense, such as abscisic acid, jasmonic acid, and salicylic acid. Furthermore, the low concentration of metals significantly down regulated the mRNA expression of enzymes encoding heavy metal transporters (OsHMA2 and OsHMA3) in Si-metal-treated rice plants. Genes responsible for Si transport (OsLSi1 and OsLSi2), showed a significant up-regulation of mRNA expression with Si treatment in rice plants. Conclusion The present study supports the active role of Si in the regulation of stresses from heavy metal exposure through changes in root morphology. PMID:24405887

  12. Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

    SciTech Connect

    Kumar, Vinod; Singh, Neetu; Kapoor, Avinashi; Ntwaeaborwa, Odireleng M.; Swart, Hendrik C.

    2013-11-15

    Graphical abstract: - Highlights: • n-AZB/p-Si heterojunction diodes were formed. • n-AZB/p-Si diode annealed at 700 °C showed best rectifying behavior. • Zn{sub 2}SiO{sub 4} was formed at 800 °C. • n and ϕ{sub b} were estimated to be 1.63 and 0.4 eV, respectively, at 700 °C. • Tailoring of BG was attributed to annealing induced stresses in the films. - Abstract: In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol–gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 °C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 °C and increased to 3.30 eV at 800 °C probably due to the formation of Zn{sub 2}SiO{sub 4} at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 °C.

  13. Novel silicone materials for LED packaging

    NASA Astrophysics Data System (ADS)

    Norris, Ann W.; Bahadur, Maneesh; Yoshitake, Makoto

    2005-09-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers for use as encapsulants and lenses for many next generation LED device designs. Silicones can function in several roles that include protective lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their high transparency in the UV-visible region, controlled refractive index (RI), stable thermo-mechanical properties, and tuneable hardness from soft gels to hard resins. The high current and high operating temperatures of HB-LEDs present a significant materials challenge for traditional organic materials such as epoxies, acrylics and cyclo olefin copolymers (COC) that lack the thermal and molecular stability needed to provide optical clarity and mechanical performance required for next generation devices. In addition, the retention of optical clarity over the lifetime of the device, which involves long term exposure to high flux in the UV-visible wavelength region, is a critical requirement. Silicones have been demonstrated to provide the required stability. This paper will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a surmountable challenge for high throughput LED device manufacturing.

  14. Ternary chalcogenides Cs2Zn3Se4 and Cs2Zn3Te4 : Potential p -type transparent conducting materials

    DOE PAGESBeta

    Shi, Hongliang; Saparov, Bayrammurad; Singh, David J.; Sefat, Athena S.; Du, Mao-Hua

    2014-11-11

    Here we report prediction of two new ternary chalcogenides that can potentially be used as p-type transparent conductors along with experimental synthesis and initial characterization of these previously unknown compounds, Cs2Zn3Ch4 (Ch = Se, Te). In particular, the structures are predicted based on density functional calculations and confirmed by experiments. Phase diagrams, electronic structure, optical properties, and defect properties of Cs2Zn3Se4 and Cs2Zn3Te4 are calculated to assess the viability of these materials as p-type TCMs. Cs2Zn3Se4 and Cs2Zn3Te4, which are stable under ambient air, display large optical band gaps (calculated to be 3.61 and 2.83 eV, respectively) and have smallmore » hole effective masses (0.5-0.77 me) that compare favorably with other proposed p-type TCMs. Defect calculations show that undoped Cs2Zn3Se4 and Cs2Zn3Te4 are p-type materials. However, the free hole concentration may be limited by low-energy native donor defects, e.g., Zn interstitials. Lastly, non-equilibrium growth techniques should be useful for suppressing the formation of native donor defects, thereby increasing the hole concentration.« less

  15. P-type ATPases.

    PubMed

    Palmgren, Michael G; Nissen, Poul

    2011-01-01

    P-type ATPases form a large superfamily of cation and lipid pumps. They are remarkably simple with only a single catalytic subunit and carry out large domain motions during transport. The atomic structure of P-type ATPases in different conformations, together with ample mutagenesis evidence, has provided detailed insights into the pumping mechanism by these biological nanomachines. Phylogenetically, P-type ATPases are divided into five subfamilies, P1-P5. These subfamilies differ with respect to transported ligands and the way they are regulated. PMID:21351879

  16. Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Murakoshi, Atsushi; Iwase, Masao; Niiyama, Hiromi; Koike, Mitsuo; Suguro, Kyoichi

    2013-07-01

    A contact resistivity of 6.9×10-9 Ω.cm2 has been obtained in an AlSi (1 wt %)-Cu (0.5 wt %) alloy/silicon system by using heavy-dose ion implantations of germanium and boron combined with low-temperature annealing. The analysis of the combined state showed that B12 cluster was incorporated and the supersaturation activation layer was formed into the region where germanium separated. Separated germanium is expected to have high interface state density. It is considered that this interface state density also has a Fermi level, and in order to reduce the difference from the Fermi level of the substrate, the charge moves to interface state density from the substrate. As a result, it is not based on a metallic material but a work function becomes small because pinning by which a Fermi level is fixed to interface state density occurs owing to the substrate/metal interface. It is considered to be attributable to the existence of a Ge-rich layer formed by low-temperature annealing, and a supersaturation activation layer that lowers contact resistance was formed.

  17. Encapsulation of PV cells using silicone materials

    NASA Technical Reports Server (NTRS)

    Dennis, W. E.

    1980-01-01

    The use of silicone materials as thin conformal coatings for the protection of photovoltaic cells is investigated. Five silicone materials ranging from soft elastomers to high modulus resins were evaluated after exposure to UV radiation, outdoor weathering, thermal cycling at high humidity and temperature cycling from -40 C to 90 C. The effects of these tests were monitored by periodically measuring the output of two-cell circuit strings encapsulated with the various materials, and one exceptional silicone coating for which no significant changes in cell output were noted after 300 days was chosen as the best of the candidates. Because only a thin coating of the substance is needed, material costs 60% lower than those of previous encapsulants are now possible.

  18. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1990-02-02

    A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

  19. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  20. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  1. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  2. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  3. Silicon-on-insulator materials and devices

    SciTech Connect

    Hosack, H.H.

    1989-01-01

    Silicon-on-insulator (SOI) has emerged during the past several years as the most promising approach to satisfying the increasingly demanding requirements for integrated circuits tolerant to total-dose X rays as well as to transient radiation pulses and high-energy particles. The basic mechanisms of radiation damage and circuit performance implications in SOI are similar in some respects to the effects in other integrated circuit technologies; however, there are several unique effects and device-related consequences that are available due to the thin silicon layers and buried oxide insulator used in the SOI device structure. The basic features of SOI materials and their fabrication, as well as the unique areas where radiation effects in SOI devices differ from those in devices produced on bulk silicon. The fabrication requirements for materials for complementary metal-oxide semiconductors (CMOS) and bipolar SOI devices are considered in this paper as well as the relationship between material fabrication and device requirements.

  4. Preparation and LPG-gas sensing characteristics of p-type semiconducting LaNbO4 ceramic material

    NASA Astrophysics Data System (ADS)

    Balamurugan, C.; Lee, D.-W.; Subramania, A.

    2013-10-01

    Lanthanam niobate (LaNbO4) nanopowder was synthesized by a low temperature solution-based process. Thermal analysis TG/DTA, XRD, SEM, TEM, EDX, impedance analysis and Brunauer-Emmett-Teller (BET) were used to characterize the precursor and the calcined LaNbO4 powders. The gas sensing behavior of LaNbO4 nanopowder was studied with gases like liquid petroleum gas (LPG), ammonia (NH3), and ethanol (C2H5OH), as a function of various controlling factors like operating temperature, concentration of the gas and response time. It revealed that LaNbO4 is a very promising material for the detection of LPG (80%) and NH3 (59%) at relatively lower operating temperatures.

  5. Thick film silicon growth techniques. [die materials

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.; White, V. E.

    1973-01-01

    The research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.

  6. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices. PMID:19076042

  7. Thermodynamically uphill reduction of a surface-confined N,N'-dialkyl-4,4'-bipyridinium derivative on illuminated p-type silicon surfaces

    SciTech Connect

    Bookbinder, D.C.; Wrighton, M.S.

    1980-07-16

    Results pertaining to a chemically derivatized p-type semiconductor photocathode surface are reported. The reduced form of N,N'-dimethyl-4,4'-bipyridinium comes into rapid redox equilibrium with aqueous (pH < 6) solutions containing suspensions of Pt to evolve Hg; the H/sub 2/ evolution can also be catalyzed by hydrogenase. Included are results for derivatized Pt to establish the thermodynamics for the surface-confined reagents. Possible applications in bioelectrochemistry and in electrochronic displays with reversible electrodes functionalized with the bipyridinium reagent were noted. 2 figures. (DP)

  8. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  9. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  10. Role of the buffer at the interface of intrinsic a-Si:H and p-type a-Si:H on amorphous/crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Meng, Fanying; Shen, Leilei; Shi, Jianhua; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Liu, Zhengxin

    2015-11-01

    We investigate the influence of the different buffer at the interface between the intrinsic a-Si:H and p-type a-Si:H layers on amorphous/crystalline silicon heterojunction (SHJ) solar cells performance. It is demonstrated that the ultrathin buffer at interface of intrinsic a-Si:H and p-type a-Si:H, obtained by H-rich plasma treatment on the initial intrinsic a-Si:H passivation layer, can significantly enhance the minority carrier lifetime and decrease the emitter saturation current density. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy analyses indicate that the initial intrinsic a-Si:H films become dense and less defected as a result of the relaxation and reconstruction when they are treated during the H-rich plasma environment. Based on this finding combined with the optimization of surface texturization of the silicon wafer, this work allows us to reach very high Voc values over 730 mV without losses on fill factor, the 100 μm, 125 × 125 mm2 SHJ solar cells were fabricated with industry-compatible process, yielding the efficiency up to 22.5%.

  11. An all-solid-state perovskite-sensitized solar cell based on the dual function polyaniline as the sensitizer and p-type hole-transporting material

    NASA Astrophysics Data System (ADS)

    Xiao, Yaoming; Han, Gaoyi; Chang, Yunzhen; Zhou, Haihan; Li, Miaoyu; Li, Yanping

    2014-12-01

    High performance dual function of polyaniline (PANI) with brachyplast structure is synthesized by using a two-step cyclic voltammetry (CV) approach onto the fluorinated tin oxide (FTO) glass substrate, which acts as the sensitizer and p-type hole-transporting material (p-HTM) for the all-solid-state perovskite-sensitized solar cell (ass-PSSC) due to its π-π* transition and the localized polaron. The ass-PSSC based on the PANI delivers a photovoltaic conversion efficiency of 7.34%, and reduces from 7.34% to 6.71% after 1000 h, thereby 91.42% of the energy conversion efficiency is kept, indicating the device has a good long-term stability.

  12. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics. PMID:27479904

  13. Replacement of silicone polymer A with silicone polymer B and the subsequent characterization of the new cellular silicone materials

    SciTech Connect

    Schneider, J.W.

    1994-04-01

    The purpose of this project is to replace silicone polymer A with silicone polymer B produced by Vendor B. Silicone polymer B and the resulting B-50 cellular silicone have been used to produce cushions for the W87 program. Approximately 5.5 years of stress relaxation aging study data as well as actual part surveillance data have been collected, characterizing the stockpile life performance of the B-50 cellular silicone cushion material. Process characterization of new cellular silicone materials as a result of replacing silicone polymer A with silicone polymer B has been completed. Load deflection requirements for the new cellular silicone materials based on silicone polymer B have been met. The silicone polymer B based cellular silicone materials must be compounded at densities of approximately 0.03 g/cm{sup 3} less than the silicone polymer A based cellular silicone materials in order to achieve the same load deflection requirements has also been demonstrated. The change in silicone polymers from A to B involved a decrease in volatile content as well as a decrease in part shrinkage.

  14. Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

    NASA Astrophysics Data System (ADS)

    Farrell, L.; Norton, E.; O'Dowd, B. J.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2015-07-01

    In this letter, we demonstrate a low temperature (≈345 °C) growth method for Cu deficient CuCrO2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 μS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably, despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means that the material can be deposited on flexible substrates. As this is a solution based technique, it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.

  15. Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-).

    PubMed

    Ohta, Hiromichi; Sugiura, Kenji; Koumoto, Kunihito

    2008-10-01

    Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3. PMID:18821809

  16. Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio; Chen Gang; Jantsch, Wolfgang

    2011-12-23

    Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

  17. Acoustic microscopy of silicon carbide materials

    NASA Technical Reports Server (NTRS)

    Khandelwal, P. K.; Heitman, P. W.; Yuhas, D.; Vorres, C. L.

    1982-01-01

    It is shown that scanning laser acoustic microscopy (SLAM) is able to detect such fracture-controlling flaws in dense silicon carbide materials as surface voids, whose diameter-by-depth size is a minimum of 75 by 17 microns in reaction-bonded SiC and 68 by 25 microns in alpha-SiC. Surface conditions such as pitting, which have been found to limit the discernibility of drilled holes, become important when pit and drilled hole sizes become comparable.

  18. Maxillofacial Prosthetic Materials- An Inclination Towards Silicones

    PubMed Central

    Choudhary, Sunita; Garg, Hemlata; H.G., Jagadeesh

    2014-01-01

    There have been constant searches and researches which are taking place in the field of dental materials to best suit the ideal selection criteria to satisfy the functionality, biocompatibility, aesthetics as well as the durability as a maxillofacial material. Among all the different materials, Silicone is the most popularly used, but still studies are carried out to overcome their weaknesses and to come out with a material which can be labeled as the “ideal maxillofacial prosthetic material”. This article comprises the materials which were and are in use and the reason for their unpopularity. It also gives us a scope to understand the major fields where the materials lack and thus needs improvement to render an individual with the best maxillo-facial prosthesis. PMID:25654054

  19. Reliability of two sintered silicon nitride materials

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Sanders, W. A.; Pierce, L. A.

    1985-01-01

    Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.

  20. Material properties of silicon and silicon carbide foams

    NASA Astrophysics Data System (ADS)

    Jacoby, Marc T.; Goodman, William A.

    2005-08-01

    Silicon and silicon carbide foams provide the lightweighting element for Schafer Corporation's silicon and silicon carbide lightweight mirror systems (SLMSTM and SiC-SLMSTM). SLMSTM and SiC-SLMSTM provide the enabling technology for manufacturing lightweight, athermal optical sub-assemblies and instruments. Silicon and silicon carbide foam samples were manufactured and tested under a Schafer-funded Internal Research and Development program in various configurations to obtain mechanical and thermal property data. The results of the mechanical tests that are reported in this paper include Young's modulus, compression strength, tensile strength, Poisson's ratio and vibrational damping. The results of the thermal tests include thermal conductivity and coefficient of thermal expansion.

  1. Cz-Silicon Produced from Solar-Grade and Recycled Materials. Part II: Investigating Performances of Solar Cell Produced from Solar-Grade Cz-Silicon

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Øvrelid, Eivind Johannes; Di Sabtino, Marisa; Juel, Mari; Tranell, Gabriella

    2015-03-01

    This paper is the second of two, investigating the properties of P-type Cz-silicon materials and solar cells produced with recycled silicon and Elkem Solar Silicon (ESS) materials. While the focus on the first work was on the bulk properties and grown defects of the material, the current study focuses on the solar cell performances. In the processing of the solar cells, the phosphorous diffusion process was optimized to improve the bulk properties and thus to maximize the final solar cell characteristics. Results from the characterization of material defects suggest that the performances of the experimental ingots are limited by the activated grown-in defects, which should be strictly controlled during crystal growth and solar cell processing. The solar cells produced from the investigated ingots showed efficiency values up to 18.5 pct and fill factor values up to 79 pct, comparable to conventional silicon produced from poly silicon. Solar cells produced from mixed recycled and ESS material exhibit a better performance than 100 pct recycled material. Boron and oxygen concentration levels and net doping level showed a concurrent effect on light-induced degradation (LID). Appropriate compensation was finally demonstrated to be an efficient way to improve solar cells efficiency of Cz-silicon produced from recycled silicon, even though higher dopant concentration incurred relatively faster LID.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  3. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  4. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  5. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

    SciTech Connect

    Dao, Vinh Ai; Heo, Jongkyu; Choi, Hyungwook; Kim, Yongkuk; Park, Seungman; Jung, Sungwook; Lakshminarayan, Nariangadu; Yi, Junsin

    2010-05-15

    The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (D{sub it}), the resistivity of p-type silicon substrates ({rho}) and then work function of transparent conductive oxide ({phi}{sub TCO}) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on {rho} and {phi}{sub TCO} were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (author)

  6. Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

    NASA Astrophysics Data System (ADS)

    Lim, Han-Sin; Kwon, Oh-Kyong

    2009-03-01

    An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-film transistors (TFTs) and a p-intrinsic-metal (p-i-m) diode is proposed for image scanning and touch sensing functions. Because it is a very difficult challenge to integrate both display pixels and optical sensing circuits into the restricted pixel area, the number of additional devices and control signal lines must be minimized. Therefore, two p-type TFTs, one p-i-m diode, one capacitor, and one signal line are added to display pixel for the proposed optical sensing circuit. Active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED) pixels with the proposed optical sensing circuit have image scanning and touch sensing functions, respectively. Through the measurement of the proposed circuit under the condition of incident light varying from 0 to 10,000 lx, we verified that the dynamic and output ranges of the proposed circuit are 30 dB and 1.5 V, respectively.

  7. Efficient bifacial perovskite solar cell based on a highly transparent poly(3,4-ethylenedioxythiophene) as the p-type hole-transporting material

    NASA Astrophysics Data System (ADS)

    Xiao, Yaoming; Han, Gaoyi; Wu, Jihuai; Lin, Jeng-Yu

    2016-02-01

    A novel bifacial perovskite solar cell (PSC) is devised and prepared by using a highly transparent poly(3,4-ethylenedioxythiophene) (PEDOT) electrode. The PEDOT is used as the p-type hole-transporting material (HTM) due to the well matched band positions for the charge separation and transport. Moreover, the PEDOT layer can play a role of electron blocking layer at the CH3NH3PbI3/PEDOT interface to reduce the electron recombination rate because of its LUMO level is higher than that of the perovskite sensitizer. As a result, the bifacial PSC based on the PEDOT HTM yields front and rear efficiencies of 12.33% and 11.78% respectively, which are higher than those of the PSC without the PEDOT HTM (8.67% and 8.27% of the front and rear efficiencies). And the front efficiency is only decreased by 4.46% to the rear efficiency. These promising results highlight the potential application of the PEDOT in the cost-effective and transparent PSC, which could be used in the bifacial solar cell and tandem solar cell.

  8. Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

  9. Space Environment Effects on Silicone Seal Materials

    NASA Technical Reports Server (NTRS)

    deGroh, Henry C., III; Daniels, Christopher C.; Dever, Joyce A.; Miller, Sharon K.; Waters, Deborah L.; Finkbeiner, Joshua R.; Dunlap, Patrick H.; Steinetz, Bruce M.

    2010-01-01

    A docking system is being developed by the NASA to support future space missions. It is expected to use redundant elastomer seals to help contain cabin air during dockings between two spacecraft. The sealing surfaces are exposed to the space environment when vehicles are not docked. In space, the seals will be exposed to temperatures between 125 to -75 C, vacuum, atomic oxygen, particle and ultraviolet radiation, and micrometeoroid and orbital debris (MMOD). Silicone rubber is the only class of space flight-qualified elastomeric seal material that functions across the expected temperature range. NASA Glenn has tested three silicone elastomers for such seal applications: two provided by Parker (S0899-50 and S0383-70) and one from Esterline (ELA-SA-401). The effects of atomic oxygen (AO), UV and electron particle radiation, and vacuum on the properties of these three elastomers were examined. Critical seal properties such as leakage, adhesion, and compression set were measured before and after simulated space exposures. The S0899-50 silicone was determined to be inadequate for extended space seal applications due to high adhesion and intolerance to UV, but both S0383-70 and ELA-SA-401 seals were adequate.

  10. Material testing of silicon carbide mirrors

    NASA Astrophysics Data System (ADS)

    Witkin, David B.; Palusinski, Iwona A.

    2009-08-01

    The Aerospace Corporation is developing a space qualification method for silicon carbide optical systems that covers material verification through system development. One of the initial efforts has been to establish testing protocols for material properties. Three different tests have been performed to determine mechanical properties of SiC: modulus of rupture, equibiaxial flexural strength and fracture toughness. Testing materials and methods have been in accordance with the respective ASTM standards. Material from four vendors has been tested to date, as part of the MISSE flight program and other programs. Data analysis has focused on the types of issues that are important when building actual components- statistical modeling of test results, understanding batch-to-batch or other source material variations, and relating mechanical properties to microstructures. Mechanical properties are needed as inputs to design trade studies and development and analysis of proof tests, and to confirm or understand the results of non-destructive evaluations of the source materials. Measuring these properties using standardized tests on a statistically valid number of samples is intended to increase confidence for purchasers of SiC spacecraft components that materials and structures will perform as intended at the highest level of reliability.

  11. Low cost silicon solar array project silicon materials task

    NASA Technical Reports Server (NTRS)

    1977-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

  12. Solar cell structure incorporating a novel single crystal silicon material

    DOEpatents

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  13. Review of the silicon material task

    SciTech Connect

    Lutwack, R.

    1984-02-01

    The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane in a Siemens-type process were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

  14. A review of the silicon material task

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1984-01-01

    The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane is a siemens-type were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

  15. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Yaws, C. L.; Li, K. Y.; Hopper, J. R.; Fang, C. S.; Hansen, K. C.

    1981-01-01

    Results for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells are presented. Analyses of process system properties are important for chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major physical, thermodynamic and transport property data are reported for silicon source and processing chemical materials.

  16. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  17. Silicon carbide alloys: Research reports in materials science

    SciTech Connect

    Dobson, M.M.

    1986-01-01

    The book draws from work done on other silicon materials, silicon nitrides and sialons, to emphasize the importance of the SiC system. A comprehensive treatment of non-oxide silicon ceramics, this work is of special interest to researchers involved in ceramics, materials science, and high-temperature technology. This book covers the alloys of silicon carbide with aluminum nitride. Crystallography and experimental methods including sample preparation, furnace methods, X-ray and electron diffraction, optical and electron microscopy and chemical analysis are covered.

  18. Porous silicon as a substrate material for potentiometric biosensors

    NASA Astrophysics Data System (ADS)

    Thust, Marion; Schöning, M. J.; Frohnhoff, S.; Arens-Fischer, R.; Kordos, P.; Lüth, H.

    1996-01-01

    For the first time porous silicon has been investigated for the purpose of application as a substrate material for potentiometric biosensors operating in aqueous solutions. Porous silicon was prepared from differently doped silicon substrates by a standard anodic etching process. After oxidation, penicillinase, an enzyme sensitive to penicillin, was bound to the porous structure by physical adsorption. To characterize the electrochemical properties of the so build up penicillin biosensor, capacitance - voltage (C - V) measurements were performed on these field-effect structures.

  19. Single electron transistor with P-type sidewall spacer gates.

    PubMed

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed. PMID:22121580

  20. Wetting and infiltration of graphite materials by molten silicon

    SciTech Connect

    Li, J.G.; Hausner, H.

    1995-02-01

    Wetting-assisted infiltration without the application of external pressure has advantages for the production of complex shaped metal-ceramic composites to near net shape with very low residual porosity. A class of fibrous Si/SiC composites was formed by infiltrating molten silicon into densely packed carbon fibers in preformed shapes. The liquid silicon/solid carbon system may be considered to be a model for reactive wetting and infiltration which is accompanied by the heterogeneous chemical reaction between silicon and carbon to form a solid SiC product layer at the silicon/carbon interface. The wetting behavior of various carbon materials by molten silicon has been extensively investigated recently with the sessile drop method. Some results of this investigation will be reported in the present paper. Attention will be paid to the surface roughness of the substrates on the wetting behavior. The eventual infiltration of silicon into the graphites will be discussed with relation to the wetting.

  1. Holey Silicon as an Efficient Thermoelectric Material

    SciTech Connect

    Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

    2010-09-30

    This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

  2. Silicon carbide material sintered bodies manufacturing

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method is described for producing a high density silicon carbide sintering substance which contains aluminum oxide. The sintering is done in CO gas atmosphere, which is kept at 2 to 20 atmospheric pressures.

  3. Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications

    NASA Astrophysics Data System (ADS)

    Lehmann, Volker

    2002-04-01

    Silicon has been and will most probably continue to be the dominant material in semiconductor technology. Although the defect-free silicon single crystal is one of the best understood systems in materails science, its electrochemistry to many people is still a kind of "alchemy". This view is partly due to the interdisciplinary aspects of the topic: Physics meets chemistry at the silicon-electrolyte interface. This book gives a comprehensive overview of this important aspect of silicon technology as well as examples of applications ranging from photonic crystals to biochips. It will serve materials scientists as well as engineers involved in silicon technology as a quick reference with its more than 150 technical tables and diagrams and ca. 1000 references cited for easy access of the original literature.

  4. p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Sheng, Su; Fang, Guojia; Li, Chun; Xu, Sheng; Zhao, Xingzhong

    2006-06-01

    The recent advance of p-type transparent conductive oxide thin films is reviewed. The focus is on p-type transparent oxide semiconductors CuAlO2, CuGaO2, CuInO2, SrCu2O2, and LaCuOCh (Ch = chalcogen). These materials and related device applications are then shown as examples. Room temperature operation of current injection emission from ultraviolet light-emitting diodes based on p-SCO/n-ZnO p-n junctions has been demonstrated. This changed with the discovery of p-type transparent conducting oxides, thereby opening up the possibility for all-oxide transparent electronics.

  5. Electronic and material characterization of silicon-germanium and silicon-germanium-carbon epitaxial layers

    NASA Astrophysics Data System (ADS)

    Peterson, Jeffrey John

    This dissertation presents results of material and electronic characterization of strained SiGe and SiGeC epitaxial layers grown on (100) silicon using Atmospheric Pressure Chemical Vapor Deposition and Reduced Pressure Chemical Vapor Deposition. Fabrication techniques for SiGe and SiGeC are also presented. Materials characterization of epitaxial SiGe and SiGeC was done to characterize crystallinity using visual, microscopic, and Rutherford Backscattering (RBS) characterization. Surface roughness was characterized and found to correspond roughly with epitaxial crystal quality. Spectroscopic ellipsometry was used to study epitaxial layer composition and thickness, requiring development of models for nSiGe and nSiGeC versus composition (the first published for nSiGeC) and generation of ellipsometric nomograms. X-ray diffraction (XRD) measurements of epitaxial strain and relaxation showed Ge composition dominates the stress, although strain compensation due to C was observed. XRD, Raman, and Fourier Transform Infrared (FTIR) characterization were done to characterize substitutional C in SiGeC epitaxial layers, finding that C incorporation into SiGeC saturates for C contents >1%. Fabrication techniques for SiGe and SiGeC were examined. Low thermal budget processing of strained layers were investigated as well as fabrication techniques using advantageous material properties of SiGe and SiGeC. Ti/Al contacts were developed and characterized for electrical contact to SiGe and SiGeC. Schottky contacts of Pt silicide on SiGe and SiGeC was done; formation and resistivity were characterized. Four separate resistivity characterization structures have been fabricated using mesa-etch and Si etch-stop techniques. A NPN Heterojunction Bipolar transistor has been fabricated using successive mesa-etches and SiGe (or SiGeC) etch-stops. Electronic characterization of in-situ doped SiGe and SiGeC epitaxial layers was done to determine resistivity, mobility, and bandgap. Resistivities

  6. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, George C.

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  7. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  8. Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

    PubMed

    Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

    2015-09-21

    A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors. PMID:26331268

  9. Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators

    NASA Astrophysics Data System (ADS)

    Arab, A.; Davydov, A. V.; Papaconstantopoulos, D. A.; Li, Q.

    2016-06-01

    First-principles calculations have been performed to study the thermoelectric properties of monolayer MoS2 armchair nanoribbons (ACNRs). The electronic behavior of nanoribbons is dominated by the presence of edge states that are dependent on the number of zigzag chains across the nanoribbon. In addition, it is found that the phonon thermal conductance of monolayer MoS2 ACNRs is smaller than monolayer films due to phonon edge scattering. This effect is more pronounced in narrower nanoribbons, which leads to a higher ZT value compared to a monolayer MoS2 sheet. The effects of sulfur vacancy and edge roughness on the thermoelectric properties of MoS2 ACNRs have also been studied. We found that edge roughness decreased ZT values compared to those of perfect nanoribbons, as its impact on electrical conductance is more severe than on phonon thermal conductance. Sulfur vacancy, however, improved ZT in some subbands. It is shown that ZT values as high as 4 for electron-doped and 3 for hole-doped nanoribbons can be achieved at T = 500 K. The ability to achieve high ZT values for both p-type and n-type nanoribbons makes monolayer MoS2 ACNR a promising candidate for future solid-state thermoelectric generators.

  10. Silicon radiation detectors: materials and applications

    SciTech Connect

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

  11. Flat-plate solar array project. Volume 2: Silicon material

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  12. Process Feasibility Study in Support of Silicon Material Task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1979-01-01

    Analysis of process system properties was continued for silicon source materials under consideration for producing silicon. The following property data are reported for dichlorosilane which is involved in processing operations for silicon: critical constants, vapor pressure, heat of vaporization, heat capacity, density, surface tension, thermal conductivity, heat of formation and Gibb's free energy of formation. The properties are reported as a function of temperature to permit rapid engineering usage. The preliminary economic analysis of the process is described. Cost analysis results for the process (case A-two deposition reactors and six electrolysis cells) are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon. Fixed capital investment estimate for the plant is $12.47 million (1975 dollars) ($17.47 million, 1980 dollars). Product cost without profit is 8.63 $/kg of silicon (1975 dollars)(12.1 $/kg, 1980 dollars).

  13. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  14. Modified silicon-germanium alloys with improved performance. [thermoelectric material

    NASA Technical Reports Server (NTRS)

    Pisharody, R. K.; Garvey, L. P.

    1978-01-01

    This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

  15. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1978-01-01

    Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

  16. Silicon as an advanced window material for high power gyrotrons

    SciTech Connect

    Parshin, V.V.; Andreev, B.A.; Gusev, A.V.

    1995-05-01

    The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated. The dielectric data are given for the wide range of frequencies (30 -330 GHz) and temperatures (30 -330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

  17. Temperature-dependent Hall effect measurements on Cz-grown silicon pulled from compensated and recycled feedstock materials

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Modanese, Chiara; Di Sabatino, Marisa; Tranell, Gabriella

    2015-11-01

    In this work, temperature-dependent Hall effect measurements in the temperature range 88-350 K were carried out to investigate the electrical properties of three solar grade p-type Czochralski (Cz) silicon ingots, pulled from recycled p-type multi-crystalline silicon top cuts and compensated solar grade (SoG) feedstock. Material bulk properties including Hall mobility, carrier density and resistivity as functions of temperature were studied to evaluate the influence of compensation and impurities. Recycled top cut replacing poly-silicon as feedstock leads to a more uniform resistivity. In addition, higher concentrations of O and C, give rise to oxygen related defects, which act as neutral scattering centers displaying only a slight influence on the electrical properties at low temperature compared to the dominant compensation effect. The electrical performances of all samples are shown to be strongly dependent on compensation level, especially at the lowest temperature (~88 K). A significant presence of incompletely ionized phosphorus was deduced through the measured carrier density. The temperature-dependent Hall effect measurements fit Klaassen's mobility model very well at low temperatures (<150 K), showing consistency with the explanation of a reduced screening effect on ionized dopants for lightly doped silicon, while the deviation at the high temperature probably may be accounted for by the presence of as-grown defects, such as oxygen related defects and phosphorus clusters, which are usually neglected in most mobility models.

  18. Silicon carbide materials for high duty seal applications

    SciTech Connect

    Berroth, K.E. )

    1990-12-01

    Properties, fabrication, and high-duty applications of silicon carbide grades are discussed. The two types of silicon carbide, i.e., reaction-bonded and sintered, are considered. The potential for adhesion and the lack of dry running abilities lead to a variety of microstructures. For reaction-bonded silicon carbide, the microstructure can be a tool for optimization of the tribological behavior. Besides the high corrosion resistance of the material, its thermal conductivity is excellent. Grain sizes of about 40-50 microns are used in high-duty applications. Reaction-bonded silicon carbide with residual content of carbon graphite has improved tribological/hydrodynamic characteristics and performs well in sealing hard faces.

  19. Current status of silicon materials research for photovoltaic applications

    SciTech Connect

    Ciszek, T.F.

    1985-04-01

    The desire for high solar cell efficiencies has been a strong factor in determining the course of recent silicon crystal growth research efforts for photovoltaics. This review, therefore, focuses on single-crystal, dislocation-free ingot growth methods (Czochralski growth, float zoning, and cold crucible growth) and on sheet growth technologies, generally multicrystalline, that have achieved moderately high (>13.5%) laboratory-scale efficiencies. These include dendritic web growth, growth from capillary dies, edge-supported pulling, ribbon-against-drop growth, and a recent technique termed crucible-free horizontal growth. Silicon ribbon crystals provide a favorable geometry and require no wafering, but they contain defects that limit solar cell performance. Growth processes, their current status, and cell efficiencies are discussed. Silicon material process steps before and after crystal growth are described, and the advantages of silicon are presented.

  20. Materials requirements for high-efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wolf, M.

    1985-01-01

    To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

  1. Process Feasibility Study in Support of Silicon Material, Task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1979-01-01

    During this reporting period, major activies were devoted to process system properties, chemical engineering and economic analyses. Analyses of process system properties was continued for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for silicon tetrafluoride: critical constants, vapor pressure, heat of varporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analysis of the BCL process was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions; process flow diagram; reaction chemistry; material and energy balances; and major process equipment design.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  3. High temperature material interactions of thermoelectric systems using silicon germanium.

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1973-01-01

    The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

  4. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    NASA Technical Reports Server (NTRS)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  5. Silicone and Fluorosilicone Based Materials for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Palsule, Aniruddha S.

    The biocompatibility and the biodurability of silicones is a result of various material properties such as hydrophobicity, low surface tension, high elasticity and chemical and thermal stability. A variety of biomedical implants employ an inflatable silicone rubber balloon filled with a saline solution. Commercial examples of such a system are silicone breast implants, tissue expanders and gastric bands for obesity control. Despite the advantages, saline filled silicones systems still have a certain set of challenges that need to be addressed in order to improve the functionality of these devices and validate their use as biomaterials. The central goal of this research is to identify these concerns, design solutions and to provide a better understanding of the behavior of implantable silicones. The first problem this research focuses on is the quantification and identification of the low molecular weight silicones that are not crosslinked into the elastomeric matrix and therefore can be leached out by solvent extraction. We have developed an environmentally friendly pre-extraction technique using supercritical CO 2 and also determined the exact nature of the extractables using Gas Chromatography. We have also attempted to address the issue of an observed loss of pressure in the saline filled device during application by studying the relaxation behavior of silicone elastomer using Dynamic Mechanical Analysis and constructing long-term relaxation master curves. We have also developed a technique to develop highly hydrophobic fluorinated barrier layers for the silicone in order to prevent diffusion of water vapor across the walls of the implant. This involves a hybrid process consisting of surface modification by plasma technology followed by two different coating formulations. The first formulation employed UV curable fluorinated acrylate monomers for the coating process and the second was based on Atom Transfer Radical Polymerization (ATRP) to generate a fluorinated

  6. Porous silicon based anode material formed using metal reduction

    SciTech Connect

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  7. Coated silicon comprising material for protection against environmental corrosion

    NASA Technical Reports Server (NTRS)

    Hazel, Brian Thomas (Inventor)

    2009-01-01

    In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

  8. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  9. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p–n junctions will also be briefly discussed.

  10. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed. PMID:27459942

  11. Electrical test structures replicated in silicon-on-insulator material

    SciTech Connect

    Cresswell, M.W.; Ghoshtagore, R.N.; Allen, R.A.; Linholm, L.W.; Villarrubia, J.S.; Sniegowski, J.J.

    1996-02-27

    Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this phenomenon presents to the certification of reference materials for the calibration of linewidth-measurement instruments. Accordingly, a new test structure has been designed, fabricated, and undergone preliminary tests. Its distinguishing characteristics are assured cross-sectional profile geometries with known side-wall slopes, surface planarity, and compositional uniformity when it is formed in mono-crystalline material at selected orientations to the crystal lattice. To allow the extraction of electrical linewidth, the structure is replicated in a silicon film of uniform conductivity which is separated from the silicon substrate by a buried oxide layer. The utilization of a Silicon-On-Insulator (SKI) substrate further allows the selective removal of substrate material from local regions below the reference features, thus facilitating measurements by optical and electron-beam transmission microscopy. The combination of planar feature surfaces having known side-wall slopes is anticipated to eliminate factors which are believed to be responsible for methods divergence in linewidth measurements, a capability which is a prerequisite for reliable certification of the linewidths of features on reference materials.

  12. Process research on non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1982-01-01

    High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

  13. Nanotribology of nanooxide materials in ionic liquids on silicon wafers

    NASA Astrophysics Data System (ADS)

    Hamidunsani, Ahmad Termizi; Radiman, Shahidan; Hassan, Masjuki Haji; Rahman, Irman Abdul

    2015-09-01

    Nanotribological properties have a significant impact on daily life. Ionic liquids (ILs) are becoming new favourable lubricants currently in researches. Addition of nanooxide materials in lubricants provide improvements to new technology. In this study, we determine nanotribological properties of BMIM+BF4- IL addition of different amount of ZnO nanomaterial on single crystals silicon wafer (Si110). The viscosity changes of IL samples against temperature increase were determined by rheological method. Nanotribological properties were determined by changes in friction coefficient and wear rate on silicon substrate surfaces using a reciprocating friction and wear monitor in 1 hour duration time. Aluminium cylinders acted as pins used to rub Si (110) substrate sample surfaces. Thus, on range between 0 mg to 3.5 mg of ZnO nanooxide material dispersed in 10ml BMIM+BF4- showed a good friction coefficient, wear and surface roughness reduction.

  14. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  15. Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467

    SciTech Connect

    Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I.

    1997-07-01

    This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

  16. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  17. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  18. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  19. Proceedings of the Flat-Plate Solar Array Workshop on the Science of Silicon Material Preparation

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Several areas of silicon material preparation were addressed including silicon production and purity, thermodynamics, kinetics, mechanisms, particle formation and growth, deposition in fluidized bed reactors, and chemical vapor deposition. Twenty-two papers were presented.

  20. Nonmetallic materials handbook. Volume 2: Epoxy and silicone materials

    NASA Technical Reports Server (NTRS)

    Podlaseck, S. E.

    1982-01-01

    Chemical and physical property test data obtained during qualification and receiving inspection testing of nonmetallic materials for the Viking Mars Lander program is presented. Thermochemical data showing degradation as a function of temperature from room temperature through 773 K is included. These data include activation energies for thermal degradation, rate constants, and exo- and/or endotherms. Thermal degradations carried out under vacuum include mass spectral data taken simultaneously during the decomposition. Many materials have supporting data such as condensation rates of degassed products and isothermal weight loss. Changes in mechanical, electrical, and thermal properties after exposure to 408 K in nitrogen for times ranging from 380 to 570 hours are included for many materials.

  1. Process research of non-CZ silicon material

    NASA Astrophysics Data System (ADS)

    High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

  2. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1983-01-01

    High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

  3. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  4. Development and evaluation of die and container materials. Low cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Wills, R. R.; Niesx, D. E.

    1979-01-01

    Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions were shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Evaulation of the interaction of these materials in contact with molten silicon indicated that solid solutions based upon beta-Si3N4 were more stable than those based on Si2N2O. Sibeon was more resistant to molten silicon attack than Sialon. Both materials should preferably be used in an inert atmosphere rather than under vacuum conditions because removal of oxygen from the silicon melt occurs as SiO enhances the dissolution of aluminum and beryllium. The wetting angles of these materials were low enough for these materials to be considered as both die and container materials.

  5. Dual-beam laser thermal processing of silicon photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Simonds, Brian J.; Teal, Anthony; Zhang, Tian; Hadler, Josh; Zhou, Zibo; Varlamov, Sergey; Perez-Würfl, Ivan

    2016-03-01

    We have developed an all-laser processing technique by means of two industrially-relevant continuous-wave fiber lasers operating at 1070 nm. This approach is capable of both substrate heating with a large defocused beam and material processing with a second scanned beam, and is suitable for a variety of photovoltaic applications. We have demonstrated this technique for rapid crystallization of thin film (~10 μm) silicon on glass, which is a low cost alternative to wafer-based solar cells. We have also applied this technique to wafer silicon to control dopant diffusion at the surface region where the focused line beam rapidly melts the substrate that then regrows epitaxially. Finite element simulations have been used to model the melt depth as a function of preheat temperature and line beam power. This process is carried out in tens of seconds for an area approximately 10 cm2 using only about 1 kW of total optical power and is readily scalable. In this paper, we will discuss our results with both c-Si wafers and thin-film silicon.

  6. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  7. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOEpatents

    Brun, Milivoj Konstantin; Luthra, Krishan Lal

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  8. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  9. Silicon Nanowire Fabric as a Lithium Ion Battery Electrode Material

    SciTech Connect

    Chockla, Aaron M.; Harris, Justin T.; Akhavan, Vahid A.; Bogart, Timothy D.; Holmberg, Vincent C.; Steinhagen, Chet; Mullins, C. Buddie; Stevenson, Keith J.; Korgel, Brian A.

    2011-11-09

    A nonwoven fabric with paperlike qualities composed of silicon nanowires is reported. The nanowires, made by the supercritical-fluid–liquid–solid process, are crystalline, range in diameter from 10 to 50 nm with an average length of >100 μm, and are coated with a thin chemisorbed polyphenylsilane shell. About 90% of the nanowire fabric volume is void space. Thermal annealing of the nanowire fabric in a reducing environment converts the polyphenylsilane coating to a carbonaceous layer that significantly increases the electrical conductivity of the material. This makes the nanowire fabric useful as a self-supporting, mechanically flexible, high-energy-storage anode material in a lithium ion battery. Anode capacities of more than 800 mA h g{sup –1} were achieved without the addition of conductive carbon or binder.

  10. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Fang, C. S.; Hansen, K. C.; Miller, J. W., Jr.; Yaws, C. L.

    1978-01-01

    Initial results for gas thermal conductivity of silicon tetrafluoride and trichlorosilane are reported in respective temperature ranges of 25 to 400 C and 50 to 400 C. For chemical engineering analyses, the preliminary process design for the original silane process of Union Carbide was completed for Cases A and B, Regular and Minimum Process Storage. Included are raw material usage, utility requirements, major process equipment lists, and production labor requirements. Because of the large differences in surge tankage between major unit operations the fixed capital investment varied from $19,094,000 to $11,138,000 for Cases A and B, respectively. For the silane process the original flowsheet was revised for a more optimum arrangement of major equipment, raw materials and operating conditions. The initial issue of the revised flowsheet (Case C) for the silane process indicated favorable cost benefits over the original scheme.

  11. Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Pellin, R.

    1983-01-01

    Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

  12. Silicon material technology status. [assessment for electronic and photovoltaic applications

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1983-01-01

    Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

  13. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  14. Novel silicone materials for LED packaging and opto-electronics devices

    NASA Astrophysics Data System (ADS)

    Vanlathem, Eric; Norris, Ann W.; Bahadur, Maneesh; DeGroot, Jon; Yoshitake, Makoto

    2006-04-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers. In LEDs, silicones can function in several roles that include optical lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their excellent transparency in the UV-visible region, their non-discoloring behavior and their stable thermo-mechanical properties. The first part of this paper/presentation will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a viable route for high throughput LED device manufacturing. For other portions of the light spectrum, specifically at telecom wavelengths, the performances of silicone based materials are also verified and this makes them attractive materials for numerous photonics device applications. The second part of this paper/presentation will describe recent demonstrations of siloxane for use as waveguides for datacom and telecom applications. A Variable Optical Attenuator (VOA) utilizing silicone based waveguides (exploiting dn/dT property) and an Optical Backplane built from silicone waveguides and out-of-plane mirrors built on glass and FR-4 substrates are discussed.

  15. Why silicon is and will remain the dominant photovoltaic material

    NASA Astrophysics Data System (ADS)

    Singh, Rajendra

    2009-07-01

    Rising demands of energy in emerging economies, coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by photovoltaic (PV) systems for green energy electricity generation. Similar to cell phones, power generated by PV systems can reach over two billion people worldwide who have no access to clean energy. Only silicon based PV devices meet the low-cost manufacturing criterion of clean energy conversion (abundance of raw material and no environmental health and safety issues). The use of larger size glass substrates and manufacturing techniques similar to the ones used by the liquid crystal display industry and the large scale manufacturing of amorphous silicon thin films based modules (~ GW per year manufacturing at a single location) can lead to installed PV system cost of $3/Wp. This will open a huge market for grid connected PV systems and related markets. With further research and development, this approach can provide $2/Wp installed PV system costs in the next few years. At this cost level, PV electricity generation is competitive with any other technology, and PV power generation can be a dominant electricity generation technology in the 21st century.

  16. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    SciTech Connect

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.; CERN RD-48 ROSE Collaboration

    1997-12-01

    Epitaxial grown thick layers ({ge} 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 {times} 10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5 {times} 10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ``sinking`` process, however, becomes non-effective at high radiation fluences (10{sup 14} cm{sup {minus}2}) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 {times} 10{sup 14} cm{sup {minus}2} the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 {times} 10{sup 12} cm{sup {minus}3} after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon.

  17. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    SciTech Connect

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.

    1997-11-01

    Epitaxial grown thick layers (>100 {mu}m) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2{center_dot}10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5{center_dot}10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects, in epitaxial layers. The {open_quotes}sinking{close_quotes} process, however, becomes non-effective at high radiation fluences (10{sup 14} cm{sup {minus}2}) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1{center_dot}10{sup 14}cm{sup {minus}2} the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3{center_dot}10{sup 12} cm{sup {minus}3} after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon.

  18. Simultaneous Formation of Ni/Al Ohmic Contacts to Both n- and p-Type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ito, Kazuhiro; Onishi, Toshitake; Takeda, Hidehisa; Kohama, Kazuyuki; Tsukimoto, Susumu; Konno, Mitsuru; Suzuki, Yuya; Murakami, Masanori

    2008-11-01

    The fabrication procedure for silicon carbide power metal oxide semiconductor field-effect transistors can be improved through simultaneous formation (i.e., using the same contact materials and a one-step annealing process) of ohmic contacts on both the n-source and p-well regions. We have succeeded in the simultaneous formation of Ni/Al ohmic contacts to n- and p-type SiC after annealing at 1000°C for 5 min in an ultrahigh vacuum. Ohmic contacts to n-type SiC were found when the Al-layer thickness was less than about 6 nm, while ohmic contacts to p-type SiC were observed for an Al-layer thickness greater than about 5 nm. Only the contacts with an Al-layer thickness in the range of 5 nm to 6 nm exhibited ohmic behavior to both n- and p-type SiC, with a specific contact resistance of 1.8 × 10-4 Ω cm2 and 1.2 × 10-2 Ω cm2 for n- and p-type SiC, respectively. An about 100-nm-thick contact layer was uniformly formed on the SiC substrate, and polycrystalline δ-Ni2Si(Al) grains were formed at the contact/SiC interface. In the samples that exhibited ohmic behavior to both n- and p-type SiC, the distribution of the Al/Ni ratios in the δ-Ni2Si(Al) grains was larger than that observed for any of the samples that showed ohmic behavior to either n- or p-type SiC. Furthermore, the grain size of the δ-Ni2Si(Al) grains in the samples showing ohmic behavior to both n- and p-type SiC was smaller than the grains in any of the samples that showed ohmic behavior to either n- or p-type SiC. Thus, the large distribution in the Al/Ni ratios and a fine microstructure were found to be characteristic of the ohmic contacts to both n- and p-type SiC. Grains with a low Al concentration correspond to ohmic contacts to n-type SiC, while grains with a high Al concentration correspond to ohmic contacts to p-type SiC.

  19. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  20. Silicon materials outlook study for 1980-1985 calendar years

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-01-01

    The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

  1. Atomistic simulations of material damping in amorphous silicon nanoresonators

    NASA Astrophysics Data System (ADS)

    Mukherjee, Sankha; Song, Jun; Vengallatore, Srikar

    2016-06-01

    Atomistic simulations using molecular dynamics (MD) are emerging as a valuable tool for exploring dissipation and material damping in nanomechanical resonators. In this study, we used isothermal MD to simulate the dynamics of the longitudinal-mode oscillations of an amorphous silicon nanoresonator as a function of frequency (2 GHz–50 GHz) and temperature (15 K–300 K). Damping was characterized by computing the loss tangent with an estimated uncertainty of 7%. The dissipation spectrum displays a sharp peak at 50 K and a broad peak at around 160 K. Damping is a weak function of frequency at room temperature, and the loss tangent has a remarkably high value of ~0.01. In contrast, at low temperatures (15 K), the loss tangent increases monotonically from 4× {{10}-4} to 4× {{10}-3} as the frequency increases from 2 GHz to 50 GHz. The mechanisms of dissipation are discussed.

  2. Compatibility of RPECVD silicon dioxide with depletion gate materials for silicon-based nanostructures

    NASA Astrophysics Data System (ADS)

    Rack, Mary Jo

    The focus of this work has been upon deposited oxide and gate materials suitable for use in silicon-based nanostructures. The latter use e-beam patterned depletion gates in order to create three-dimensional confinement of electrons in the 2-dimensional electron gas of a metal-oxide-semiconductor field effect transistor (MOSFET) inversion layer. Remote Plasma Enhanced chemical Vapor Deposition (RPECVD) silicon dioxide was selected as the deposited oxide. The deposition process was optimized using statistical techniques. Typically, low temperature deposited oxide is annealed in order to achieve device quality. The behavior of the oxide as a function of deposition and annealing temperature was characterized in order to understand the advantages of the anneal and the thermal budget required to accomplish the objectives of the MOSFET gate oxide quality oxide. Bulk oxide was assessed using etch rates in HF containing solutions, infrared absorption data, refractive index, and AFM measurements of surface roughness. The interface quality was examined using C-V measurements. Breakdown measurements were performed. The impact of the oxide deposition process on a thermally established Si/SiOsb2 interface was explored. Three materials were investigated for the role of depletion gates that might tolerate a high temperature aneal: cobalt silicide, cobalt and chrome. Their thermal stability was tested, sandwiched between a thermal oxide and a deposited oxide, for annealing temperatures of 700, 800 and 900 C by Auger electron spectroscopy and cross-sectional transmission electron spectroscopy. The impact of the oxide deposition process on the depletion gates was significant and so this has been studied as well.

  3. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathon L.; Vandersande, Jan; Fleurial, Jean-Pierre

    1992-01-01

    Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

  4. Ultraviolet Nano Imprint Lithography Using Fluorinated Silicon-Based Resist Materials

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2010-02-01

    Fluorinated silicon-based resist materials have recently been applied as ultraviolet crosslinkable materials for nano imprint lithography. I report and demonstrate the step and flash nano imprint lithography process using the newly fluorinated silicon-based resist materials for next generation technologies. This paper presents progress in the formulation of advanced resist materials design, the development of suitable ultraviolet imprint conditions and etch processes to achieve thin residual resist layers, low volumetric shrinkage of the resist film, and low imprint pressures for defect reduction. High quality imprint images were produced with multiple pattern-structured templates on wafers using these developed fluorinated silicon-based resist materials.

  5. Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Chusovitin, E. A.; Galkin, K. N.; Goroshko, D. L.; Shamirsaev, T. S.

    2011-11-01

    Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystals (NCs) of iron and chromium disilicides and polycrystalline nanocomposites with buried Mg2Si NCs (3-40 nm) on the base of reactive deposition epitaxy (RDE), solid phase epitaxy(SPE) and molecular beam epitaxy (MBE), which demonstrated wonderful thermoelectrical properties and the possibility of strong light emission with wavelength of 1.2 - 1.6 microns in the mesa-diode structures with p-n junction at direct and back bias. Doping process of Mg2Si nanocrystals inside nanocomposite layers was developed on the base of ordered surface phases of metals on a silicon substrate. Nanocomposite layers with n- and p-type conductivity have been successfully grown. The huge increase of Zeebeck coefficient in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si nanocomposites has been found.

  6. Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Chusovitin, E. A.; Galkin, K. N.; Goroshko, D. L.; Shamirsaev, T. S.

    2012-04-01

    Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystals (NCs) of iron and chromium disilicides and polycrystalline nanocomposites with buried Mg2Si NCs (3-40 nm) on the base of reactive deposition epitaxy (RDE), solid phase epitaxy(SPE) and molecular beam epitaxy (MBE), which demonstrated wonderful thermoelectrical properties and the possibility of strong light emission with wavelength of 1.2 - 1.6 microns in the mesa-diode structures with p-n junction at direct and back bias. Doping process of Mg2Si nanocrystals inside nanocomposite layers was developed on the base of ordered surface phases of metals on a silicon substrate. Nanocomposite layers with n- and p-type conductivity have been successfully grown. The huge increase of Zeebeck coefficient in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si nanocomposites has been found.

  7. [Adhesion of dental silicone rubber material to thermoplastic material for mouthguards].

    PubMed

    Yokota, Kayoko

    2010-03-01

    A preliminary study revealed that an autopolymerization addition silicone resilient denture relining material (SI) had excellent shock absorption properties similar to those of thermoplastic materials commonly used for mouthguards (ethylene-vinyl acetate: EVA). The aim of the present study was to examine the bonding strength of SI and EVA using a newly-developed adhesive prototype. Delamination tests and tensile strength tests were performed to compare the bonding strengths of SI on EVA prepared under the following four conditions: 1) Control condition (no preparation; C), 2) Sandblasting (S), 3) Bonding with the adhesive prototype (M), and 4) Combination of sandblasting preparation and bonding with the adhesive prototype (SM). The mean bonding strength (S. D.) of the delamination tests under the C, S, M and SM conditions were 0.167 (0.003) N/mm, 0.273 (0.034) N/mm, 0.242 (0.027) N/mm and 0.506 (0.113) N/mm, respectively. The mean bonding strength (S. D.) of the tensile strength tests under the C, S, M and SM conditions were 0.006 (0.011) MPa, 0.081 (0.105) MPa, 0.231 (0.069) MPa and 0.590 (0.041) MPa, respectively. Two-way analysis of variances and Tukey's HSD test detected that the combination of sandblasting preparation and bonding with the adhesive prototype significantly improved the bonding strength between SI and EVA. The results indicate that the self-curing addition silicone resilient denture relining material may adhere to the thermoplastic material prepared by combined application of sandblasting and the adhesive prototype, suggesting the potential of the dental silicone rubber material as a material for repairing mouthguards in clinical practice. PMID:20415249

  8. Low cost solar array project 1: Silicon material

    NASA Technical Reports Server (NTRS)

    Jewett, D. N.; Bates, H. E.; Hill, D. M.

    1980-01-01

    The low cost production of silicon by deposition of silicon from a hydrogen/chlorosilane mixture is described. Reactor design, reaction vessel support systems (physical support, power control and heaters, and temperature monitoring systems) and operation of the system are reviewed. Testing of four silicon deposition reactors is described, and test data and consequently derived data are given. An 18% conversion of trichlorosilane to silicon was achieved, but average conversion rates were lower than predicted due to incomplete removal of byproduct gases for recycling and silicon oxide/silicon polymer plugging of the gas outlet. Increasing the number of baffles inside the reaction vessel improved the conversion rate. Plans for further design and process improvements to correct the problems encountered are outlined.

  9. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    PubMed

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-01

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers. PMID:26281016

  10. composite and p-type Si

    NASA Astrophysics Data System (ADS)

    Lin, Yow-Jon; Yang, Shih-Hung

    2014-07-01

    The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

  11. Silicon nitride used as a rolling-element bearing material

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1975-01-01

    Rolling-element fatigue tests were conducted with hot-pressed silicon nitride to determine its ability to withstand concentrated contacts in rolling-element bearings. If hot-pressed silicon nitride is used for both balls and races, attention must be paid to fitting both shaft and bearing housing.

  12. Compatibility Studies of Various Refractory Materials in Contact with Molten Silicon

    NASA Technical Reports Server (NTRS)

    Odonnell, T.; Leipold, M. H.; Hagan, M.

    1978-01-01

    The production of low cost, efficient solar cells for terrestrial electric power generation involves the manipulation of molten silicon with a present need for noncontaminating, high temperature refractories to be used as containment vessels, ribbon-production dies, and dip-coated substrates. Studies were conducted on the wetting behavior and chemical/physical interactions between molten silicon and various refractory materials.

  13. Silicon materials task of the low cost solar array project, part 2

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rai-Choudhury, P.; Blais, P. D.; Mccormick, J. R.

    1976-01-01

    Purity requirements for solar cell grade silicon material was developed and defined by evaluating the effects of specific impurities and impurity levels on the performance of silicon solar cells. Also, data was generated forming the basis for cost-tradeoff analyses of silicon solar cell material. Growth, evaluation, solar cell fabrication and testing was completed for the baseline boron-doped Czochralski material. Measurements indicate Cn and Mn seriously degrade cell performance, while neither Ni nor Cu produce any serious reduction in cell efficiency.

  14. High-temperature corrosion of material based on silicon nitride and exposed to salts

    SciTech Connect

    Gogotski, Y.G.; Frantsevich, I.N.; Lavrenko, V.A.

    1985-05-01

    Materials based on silicon nitride or carbide have shown promise for use in manufacturing gas-turbine and diesel engine parts. This paper presents an investigation of the corrosion of a reaction-sintered material based on silicon nitride with the addition of 30% silicon carbide and 2% magnesium oxide, when exposed to melts of sodium chloride, sodium sulfide, or sea salt. The studies show that the material corrodes very little in sea salt or sodium chloride melts, but it is destroyed rapidly in a sodium sulfate melt.

  15. Studies on Thermal and Mechanical Properties of Epoxy-Silicon Oxide Hybrid Materials

    NASA Astrophysics Data System (ADS)

    Ghosh, P. K.; Kumar, Kaushal; Kumar, Arun

    2015-11-01

    Ultrasonic dual mixing (UDM) process involving ultrasonic vibration with simultaneous stirring is used to prepare epoxy-silicon oxide hybrid materials with inorganic nanoscale building blocks by incorporating nanoscale silicon oxide network in epoxy matrix. The silicon oxide network is obtained from tetraethoxysilane (TEOS) by using the in situ sol-gel process. Same epoxy-silica hybrid materials were also prepared by mixing with simple impeller stirring, and its properties were compared with the material of same composition prepared by the UDM process. The epoxy-silicon oxide hybrid materials are characterized by using FT-IR, DSC, FESEM, and XRD techniques. The glass transition temperature, tensile strength, and elastic modulus of the epoxy-silicon oxide hybrid materials treated by UDM process are found comparatively better than those of the materials processed by a rotating impeller. FESEM studies confirm that amount of TEOS varies the distribution and size of silicon oxide network, which remains relatively finer at lower content of TEOS. Significant improvement of thermal and mechanical properties of the neat epoxy is noted in the presence of 3.05 wt.% TEOS content in it is giving rise to the formation of inorganic building block of silicon oxide of size 88 ± 45 nm in the matrix. In this regard, the use of UDM process is found superior to mixing by simple impeller stirring for enhancement of properties of epoxy-silicon oxide hybrid materials. Lowering of properties of the epoxy-silicon oxide hybrid materials with TEOS addition beyond 3.05 wt.% up to 6.1 wt.% occurs primarily due to increase of amount and size (up to 170 ± 82 nm) of the inorganic building block in the matrix.

  16. Temperature-Dependent Young's modulus, shear modulus and Poisson's ratio of p-type Ce0.9Fe3.5Co0.5Sb12 and n-type Co0.95Pd0.05Te0.05Sb3 Skutterudite Thermoelectric Materials

    SciTech Connect

    Schmidt, Robert; Case, Eldon D; Ni, Jennifer E.; Trejo, Rosa M; Lara-Curzio, Edgar

    2012-01-01

    Effective models of the mechanical behavior of thermoelectric materials under device conditions require knowledge of the temperature-dependent elastic properties.Between room temperature and 600 K, Resonant Ultrasound Spectroscopy (RUS) measurements of the Young s and shear moduli of three skutterudite thermoelectric materials, n-type Co0.95Pd0.05Te0.05Sb3(both with and without 0.1 atomic % cerium dopant) and p-type Ce0.9Fe3.5Co0.5Sb12, decreased linearly with temperature at a rate between -0.011 GPa/K and -0.013 GPa/K. In contrast the Poisson s ratio was approximately 0.22 for the three materials and was relatively insensitive to temperature.For temperatures > 600 K, the elastic moduli decreased more rapidly and resonance peaks broadened indicating the onset of viscoelastic behavior.The viscoelastic relaxation of the moduli was least for Ce-doped n-type material, for which grain boundary precipitates may inhibit grain boundary sliding which in turn has important implications concerning creep resistance. In addition, powder processing of the n- and p-type materials should be done cautiously since submicron-sized powders of both the n- and p-type powders were pyrophoric

  17. Silicon materials task of the low cost solar array project, phase 2

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R., Jr.; Blais, P. D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M. H.; Mccormick, J. R.

    1977-01-01

    The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

  18. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  19. Silicon material task. Part 3: Low-cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Roques, R. A.; Coldwell, D. M.

    1977-01-01

    The feasibility of a process for carbon reduction of low impurity silica in a plasma heat source was investigated to produce low-cost solar-grade silicon. Theoretical aspects of the reaction chemistry were studied with the aid of a computer program using iterative free energy minimization. These calculations indicate a threshold temperature exists at 2400 K below which no silicon is formed. The computer simulation technique of molecular dynamics was used to study the quenching of product species.

  20. Reaction-Based SiC Materials for Joining Silicon Carbide Composites for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Singh, M.; Serizawa, H.; Katoh, Y.; Kohyama, A.

    2000-09-01

    The fabrication of large or complex silicon carbide-fiber-reinforced silicon carbide (SiC/SiC) components for fusion energy systems requires a method to assemble smaller components that are limited in size by manufacturing constraints. Previous analysis indicates that silicon carbide should be considered as candidate joint materials. Two methods to obtain SiC joints rely on a reaction between silicon and carbon to produce silicon carbide. This report summarizes preliminary mechanical properties of joints formed by these two methods. The methods appear to provide similar mechanical properties. Both the test methods and materials are preliminary in design and require further optimization. In an effort to determine how the mechanical test data is influenced by the test methodology and specimen size, plans for detailed finite element modeling (FEM) are presented.

  1. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  2. Effect of Heat Treatment on Silicon Carbide Based Joining Materials for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Nozawa, T.; Kotani, M.; Kishimoto, H.; Katoh, Y.; Kohyama, A.

    2001-10-01

    Two general approaches to obtaining silicon carbide-based joint materials were used. The first method relies on reactions between silicon and carbon to form silicon carbide, or to bond silicon carbide powders together. The second method consists of pyrolysing a polycarbosilane polymer to yield an amorphous, covalently bonded material. In order to assess the long-term durability of the joint materials, various heat treatments were performed and the effects on the mechanical properties of the joints were measured. Although the joints derived from the polycarbosilane polymer were not the strongest, the value of strength measured was not affected by heat treatment. On the other hand, the value of the strength of the reaction-based joints was affected by heat treatment, indicating the presence of residual stresses or unreacted material subsequent to processing. Further investigation of reaction-based joining should consist of detailed microscopic studies; however, continued study of joints derived from polymers is also warranted.

  3. Thermally conductive metal wool-silicone rubber material can be used as shock and vibration damper

    NASA Technical Reports Server (NTRS)

    Hough, W. W.

    1964-01-01

    Bronze wool pads, impregnated with silicon rubber, meet the requirement for a thermally conductive, shock and vibration absorbing material. They serve as spacers in equipment mounting and are resistant to high temperatures.

  4. Microscopic Image of Martian Surface Material on a Silicone Substrate

    NASA Technical Reports Server (NTRS)

    2008-01-01

    [figure removed for brevity, see original site] Click on image for larger version of Figure 1

    This image taken by the Optical Microscope on NASA's Phoenix Mars Lander shows soil sprinkled from the lander's Robot Arm scoop onto a silicone substrate. The substrate was then rotated in front of the microscope. This is the first sample collected and delivered for instrumental analysis onboard a planetary lander since NASA's Viking Mars missions of the 1970s. It is also the highest resolution image yet seen of Martian soil.

    The image is dominated by fine particles close to the resolution of the microscope. These particles have formed clumps, which may be a smaller scale version of what has been observed by Phoenix during digging of the surface material.

    The microscope took this image during Phoenix's Sol 17 (June 11), or the 17th Martian day after landing. The scale bar is 1 millimeter (0.04 inch).

    Zooming in on the Martian Soil

    In figure 1, three zoomed-in portions are shown with an image of Martian soil particles taken by the Optical Microscope on NASA's Phoenix Mars Lander.

    The left zoom box shows a composite particle. The top of the particle has a green tinge, possibly indicating olivine. The bottom of the particle has been reimaged at a different focus position in black and white (middle zoom box), showing that this is a clump of finer particles.

    The right zoom box shows a rounded, glassy particle, similar to those which have also been seen in an earlier sample of airfall dust collected on a surface exposed during landing.

    The shadows at the bottom of image are of the beams of the Atomic Force Microscope.

    The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  5. Computational Classification of P-Type ATPases.

    PubMed

    Søndergaard, Dan; Knudsen, Michael; Pedersen, Christian Nørgaard Storm

    2016-01-01

    Analysis of sequence data is inevitable in modern molecular biology, and important information about for example proteins can be inferred efficiently using computational methods. Here, we explain how to use the information in freely available databases together with computational methods for classification and motif detection to assess whether a protein sequence corresponds to a P-type ATPase (and if so, which subtype) or not. PMID:26695056

  6. Slicing of Silicon into Sheet Material. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    NASA Technical Reports Server (NTRS)

    Fleming, J. R.; Holden, S. C.; Wolfson, R. G.

    1979-01-01

    The use of multiblade slurry sawing to produce silicon wafers from ingots was investigated. The commercially available state of the art process was improved by 20% in terms of area of silicon wafers produced from an ingot. The process was improved 34% on an experimental basis. Economic analyses presented show that further improvements are necessary to approach the desired wafer costs, mostly reduction in expendable materials costs. Tests which indicate that such reduction is possible are included, although demonstration of such reduction was not completed. A new, large capacity saw was designed and tested. Performance comparable with current equipment (in terms of number of wafers/cm) was demonstrated.

  7. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    SciTech Connect

    Benavides, Pahola T.; Dai, Qiang; Sullivan, John L.; Kelly, Jarod C.; Dunn, Jennifer B.

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  8. Evolution of Plant P-Type ATPases

    PubMed Central

    Pedersen, Christian N. S.; Axelsen, Kristian B.; Harper, Jeffrey F.; Palmgren, Michael G.

    2012-01-01

    Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae) were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauri and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a non-vascular moss), Selaginella moellendorffii (a primitive vascular plant), and Arabidopsis thaliana (a model flowering plant). Each organism contained sequences for all five subfamilies of P-type ATPases. Whereas Na+ and H+ pumps seem to mutually exclude each other in flowering plants and animals, they co-exist in chlorophytes, which show representatives for two kinds of Na+ pumps (P2C and P2D ATPases) as well as a primitive H+-ATPase. Both Na+ and H+ pumps also co-exist in the moss P. patens, which has a P2D Na+-ATPase. In contrast to the primitive H+-ATPases in chlorophytes and P. patens, the H+-ATPases from vascular plants all have a large C-terminal regulatory domain as well as a conserved Arg in transmembrane segment 5 that is predicted to function as part of a backflow protection mechanism. Together these features are predicted to enable H+ pumps in vascular plants to create large electrochemical gradients that can be modulated in response to diverse physiological cues. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps. PMID:22629273

  9. Prize for Industrial Applications of Physics: Materials science, microelectronics scaling, and beyond the silicon transistor

    NASA Astrophysics Data System (ADS)

    Guha, Supratik

    2015-03-01

    Conventional density and performance scaling of the silicon microprocessor will reach an end within about a decade. In anticipation of this, there has been extensive interest in examining materials and devices that will replace silicon transistors. There is also the more far reaching interest in going beyond conventional computing and exploring non-Boolean forms of logic, and the devices and materials that will go with it. I will describe some of the research at IBM in these areas, including our work in developing carbon nanotube transistors as a drop in replacement for the silicon MOSFET.

  10. Materials characterization and fracture mechanics of a space grade dielectric silicone insulation

    NASA Technical Reports Server (NTRS)

    Abdel-Latif, A. I.; Tweedie, A. T.

    1982-01-01

    The present investigation is concerned with the DC 93-500 high voltage silicone insulation material employed to pot the gun and the collector end of a traveling wave tube (TWT) used on the Landsat D Satellite. The fracture mechanics behavior of the silicone resin was evaluated by measuring the slow crack velocity as a function of the opening mode of the stress intensity factor at +25 and -10 C, taking into account various uniaxial discrete strain values. It was found that the silicone resins slow crack growth is faster than that for a high voltage insulation polyurethane material at the same stress intensity factor value and room temperature.

  11. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

    DOEpatents

    Habermehl, Scott D.; Sniegowski, Jeffry J.

    2001-01-01

    The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

  12. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  13. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  14. Europium Silicide - a Prospective Material for Contacts with Silicon.

    PubMed

    Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  15. LSA silicon material task closed-cycle process development

    NASA Technical Reports Server (NTRS)

    Roques, R. A.; Wakefield, G. F.; Blocher, J. M., Jr.; Browning, M. F.; Wilson, W.

    1979-01-01

    The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

  16. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    NASA Technical Reports Server (NTRS)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  17. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    NASA Astrophysics Data System (ADS)

    Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  18. Isotropic behavior of an anisotropic material: single crystal silicon

    NASA Astrophysics Data System (ADS)

    McCarter, Douglas R.; Paquin, Roger A.

    2013-09-01

    Zero defect single crystal silicon (Single-Crystal Si), with its diamond cubic crystal structure, is completely isotropic in most properties important for advanced aerospace systems. This paper will identify behavior of the three most dominant planes of the Single-Crystal Si cube (110), (100) and (111). For example, thermal and optical properties are completely isotropic for any given plane. The elastic and mechanical properties however are direction dependent. But we show through finite element analysis that in spite of this, near-isotropic behavior can be achieved with component designs that utilize the optimum elastic modulus in directions with the highest loads. Using glass frit bonding to assemble these planes is the only bonding agent that doesn't degrade the performance of Single-Crystal Si. The most significant anisotropic property of Single-Crystal Si is the Young's modulus of elasticity. Literature values vary substantially around a value of 145 GPa. The truth is that while the maximum modulus is 185 GPa, the most useful <110< crystallographic direction has a high 169 GPa, still higher than that of many materials such as aluminum and invar. And since Poisson's ratio in this direction is an extremely low 0.064, distortion in the plane normal to the load is insignificant. While the minimum modulus is 130 GPa, a calculated average value is close to the optimum at approximately 160 GPa. The minimum modulus is therefore almost irrelevant. The (111) plane, referred to as the natural cleave plane survives impact that would overload the (110) and/or (100) plane due to its superior density. While mechanical properties vary from plane to plane each plane is uniform and response is predictable. Understanding the Single-Crystal Si diamond cube provides a design and manufacture path for building lightweight Single-Crystal Si systems with near-isotropic response to loads. It is clear then that near-isotropic elastic behavior is achievable in Single-Crystal Si

  19. Thermoelectric properties of gallium-doped p-type germanium

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Takarada, Sho; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Miyazaki, Yoshinobu; Uchida, Noriyuki; Tada, Tetsuya

    2016-05-01

    In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 × 1016, 3.4 × 1018, and 1.0 × 1019 cm-3) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 × 1019 cm-3 showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 × 1019 cm-3 at 300 K and increased with temperature.

  20. Diffusion of hydrogen in perfect, p -type doped, and radiation-damaged 4H-SiC

    NASA Astrophysics Data System (ADS)

    Aradi, B.; Deák, P.; Gali, A.; Son, N. T.; Janzén, E.

    2004-06-01

    The diffusion of interstitial atomic hydrogen in 4H-SiC was investigated theoretically, using the local density approximation of density functional theory. We have found that the diffusion barrier in the perfect crystal is ⩽0.6 eV . Comparing this value with the calculated zero point vibration energy of interstitial hydrogen indicates that hydrogen diffuses very rapidly in perfect portions of the SiC lattice, until it gets trapped. In p -doped (B, Al) material the dissociation of the hydrogen-acceptor complexes is the limiting step in diffusion, with a calculated dissociation energy of 2.5 and 1.6 eV for B+H and Al+H , respectively. In irradiated material the trapping and detrapping of hydrogen by silicon vacancies determines the effective diffusion barrier, which lies between 4.0 and 5.3 eV depending on the Fermi level in p -type and weakly n -type material.

  1. Enhanced cell adhesion to silicone implant material through plasma surface modification.

    PubMed

    Hauser, J; Zietlow, J; Köller, M; Esenwein, S A; Halfmann, H; Awakowicz, P; Steinau, H U

    2009-12-01

    Silicone implant material is widely used in the field of plastic surgery. Despite its benefits the lack of biocompatibility this material still represents a major problem. Due to the surface characteristics of silicone, protein adsorption and cell adhesion on this polymeric material is rather low. The aim of this study was to create a stable collagen I surface coating on silicone implants via glow-discharge plasma treatment in order to enhance cell affinity and biocompatibility of the material. Non-plasma treated, collagen coated and conventional silicone samples (non-plasma treated, non-coated) served as controls. After plasma treatment the change of surface free energy was evaluated by drop-shape analysis. The quality of the collagen coating was analysed by electron microscopy and Time-Of-Flight Secondary Ion Mass Spectrometry. For biocompatibility tests mouse fibroblasts 3T3 were cultivated on the different silicone surfaces and stained with calcein-AM and propidium iodine to evaluate cell viability and adherence. Analysis of the different surfaces revealed a significant increase in surface free energy after plasma pre-treatment. As a consequence, collagen coating could only be achieved on the plasma activated silicone samples. The in vitro tests showed that the collagen coating led to a significant increase in cell adhesion and cell viability. PMID:19641852

  2. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    NASA Astrophysics Data System (ADS)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  3. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    PubMed

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  4. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    PubMed Central

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  5. Purity of (28)Si-Enriched Silicon Material Used for the Determination of the Avogadro Constant.

    PubMed

    D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Oddone, Massimo; Bennett, John W; Stopic, Attila

    2016-07-01

    At present, counting atoms in a one-kilogram sphere made of (28)Si-enriched silicon allows the determination of the Avogadro constant with the 2.0 × 10(-8) relative standard uncertainty required for the realization of the definition of the new kilogram. With the exception of carbon, oxygen, boron, nitrogen, and hydrogen, the claimed uncertainty is based on the postulation that the silicon material used to manufacture the sphere was above a particular level of purity. Two samples of the silicon were measured using instrumental neutron activation analysis to collect experimental data to test the purity assumption. The results obtained in two experiments carried out using different research reactor neutron sources are reported. The analysis confirmed that the silicon material was of sufficient purity by quantifying the ultratrace concentration of 12 elements and determining the detection limits of another 54 elements. PMID:27282500

  6. A New Approach to Joining of Silicon Carbide-Based Materials for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    Ceramic joining is recognized as one of the enabling technologies for the application of silicon carbide-based materials in a number of high temperature applications. An affordable, robust technique for the joining of silicon carbide-based ceramics has been developed. This technique is capable of producing joints with tailorable thickness and composition. Microstructure and mechanical properties of reaction formed joints in a reaction bonded silicon carbide have been reported. These joints maintain their mechanical strengths at high temperatures (up to 1350 C) in air. This technique is capable of joining large and complex shaped ceramic components.

  7. Assessment of the advanced clay bonded silicon carbide candle filter materials. Topical report, September 1995

    SciTech Connect

    Alvin, M.A.

    1995-07-01

    Advancements have been made during the past five years to not only increase the strength of the as-manufactured clay bonded silicon carbide candle filter materials, but also to improve their high temperature creep resistance properties. This report reviews these developments, and describes the results of preliminary qualification testing which has been conducted at Westinghouse prior to utilizing the advanced clay bonded silicon carbide filters in high temperature, pressurized, coal-fired combustion and/or gasification applications.

  8. Sol-gel preparation of low oxygen content, high surface area silicon nitride and imidonitride materials.

    PubMed

    Sardar, Kripasindhu; Bounds, Richard; Carravetta, Marina; Cutts, Geoffrey; Hargreaves, Justin S J; Hector, Andrew L; Hriljac, Joseph A; Levason, William; Wilson, Felix

    2016-04-01

    Reactions of Si(NHMe)4 with ammonia are effectively catalysed by small ammonium triflate concentrations, and can be used to produce free-standing silicon imide gels. Firing at various temperatures produces amorphous or partially crystallised silicon imidonitride/nitride samples with high surface areas and low oxygen contents. The crystalline phase is entirely α-Si3N4 and structural similarities are observed between the amorphous and crystallised materials. PMID:26931152

  9. Ligand Doping on the Hybrid Thermoelectric Materials Based on Terthiophene-Capped Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Ashby, Shane P.; Bian, Tiezheng; Guélou, Gabin; Powell, Anthony V.; Chao, Yimin

    2016-03-01

    Over the past 2 years, silicon nanoparticles (SiNPs) functionalised with conjugated molecules have been shown to have potential as low-temperature thermoelectric materials. One key challenge with such materials relates to the introduction of charge carriers. There are two components of organic/silicon nanocomposite materials in which charge carriers can be introduced: the silicon nanoparticle or the organic ligand. Investigation into the effect of introducing charge carriers on the ligands via oxidation is another step towards understanding and optimising this kind of system. Terthiophene-capped SiNPs have been synthesised and characterised before and after doping. Using different ratios and the oxidant NOBF4 to dope the surface ligands, the electrical conductivity has been measured at ambient temperature. The ratio of oxidant to nanoparticles shows similar trends in electrical resistivity to that of conventional conductive polymers and shows significant improvements over the undoped material.

  10. Study of silicone-based materials for the packaging of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced