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Sample records for p-type silicon material

  1. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established. PMID:19318259

  2. Method of mitigating titanium impurities effects in p-type silicon material for solar cells

    NASA Technical Reports Server (NTRS)

    Salama, A. M. (Inventor)

    1980-01-01

    Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

  3. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  4. Transport through a single donor in p-type silicon

    NASA Astrophysics Data System (ADS)

    Miwa, J. A.; Mol, J. A.; Salfi, J.; Rogge, S.; Simmons, M. Y.

    2013-07-01

    Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ˜1 nm below the surface. The ability to image individual dopants combined with scanning tunnelling spectroscopy allows us to directly study the transport mechanism through the donor. We show that for a single P donor, transport is dominated by a minority carrier recombination process with the surrounding p-type matrix. The understanding gained will underpin future studies of atomically precise mapping of donor-donor interactions in silicon.

  5. Irradiation and annealing of p-type silicon carbide

    SciTech Connect

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P.; Kozlovski, Vitaly V.

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  6. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  7. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  8. Development of improved p-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Mclane, George; Wood, Charles; Vandersande, Jan; Raag, Valvo; Heshmatpour, Ben

    1987-01-01

    Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

  9. Laser induced lifetime degradation in p-type crystalline silicon

    SciTech Connect

    Ametowobla, M.; Bilger, G.; Koehler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  10. Laser induced lifetime degradation in p-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Ametowobla, M.; Bilger, G.; Köhler, J. R.; Werner, J. H.

    2012-06-01

    Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime τ ≈ 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

  11. Ferromagnetic states of p-type silicon doped with Mn

    NASA Astrophysics Data System (ADS)

    Yunusov, Z. A.; Yuldashev, Sh. U.; Igamberdiev, Kh. T.; Kwon, Y. H.; Kang, T. W.; Bakhadyrkhanov, M. K.; Isamov, S. B.; Zikrillaev, N. F.

    2014-05-01

    In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic state with a Curie temperature above room temperature, and that ferromagnetism was due to the Mn x B y ferromagnetic clusters. The samples with a moderate concentration of Mn at low temperatures revealed a ferromagnetic state that was mediated by carriers (holes). The samples demonstrated the anomalous Hall effect at temperatures below 100 K and had a negative magneto-resistivity peak at a temperature close to the Curie temperature. The thermal diffusivity measurements demonstrated the existence of a second-order phase transition in the samples with a moderate Mn concentration. The specific heat's critical exponent α = 0.5, determined from the thermal diffusivity measurements, confirmed the long-range nature of the magnetic exchange interaction in these samples.

  12. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    NASA Astrophysics Data System (ADS)

    Goyal, Prabal; Hong, Junegie; Haddad, Farah; Maurice, Jean-Luc; Cabarrocas, Pere Roca i.; Johnson, Erik

    2016-01-01

    The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm) and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  13. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    SciTech Connect

    Lee, C.H.; Lim, K.S.

    1998-01-01

    A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B{sub 2}H{sub 6} and C{sub 2}H{sub 4}. By increasing the boron doping ratio (B{sub 2}H{sub 6}/C{sub 2}H{sub 4}) from 0 to 12000 ppm, the dark conductivity increased from {approximately}10{sup {minus}9} to {approximately}10{sup {minus}7} S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3{times}10{sup {minus}8} S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-{Angstrom}-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 {Angstrom})/p-a-SiC (40 {Angstrom}) double p-layer structure. The thin ({lt}15 {Angstrom}) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. {copyright} {ital 1998 American Institute of Physics.}

  14. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

    SciTech Connect

    Sun, Chang Rougieux, Fiacre E.; Macdonald, Daniel

    2014-06-07

    Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr{sub i} and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ{sub n}/σ{sub p} of Cr{sub i} and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

  15. Dual ohmic contact to N- and P-type silicon carbide

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  16. Novel method of separating macroporous arrays from p-type silicon substrate

    NASA Astrophysics Data System (ADS)

    Bobo, Peng; Fei, Wang; Tao, Liu; Zhenya, Yang; Lianwei, Wang; Fu, Ricky K. Y.; Chu, Paul K.

    2012-04-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

  17. Suppression of hydrogen diffusion at the hydrogen-induced platelets in p-type Czochralski silicon

    SciTech Connect

    Huang, Y.L.; Ma, Y.; Job, R.; Fahrner, W.R.

    2005-03-28

    Hydrogen diffusion in p-type Czochralski silicon is investigated by combined Raman spectroscope, scanning electron microscope, and spreading resistance probe measurements. Exposure of silicon wafers to rf hydrogen plasma results in the formation of platelets. The increase of hydrogenation duration leads to the growth of the platelets and the reduction of the hydrogen diffusivity. The large platelets grow faster than the small ones. The growth of the platelets is based on the capture of hydrogen. The dependence of the hydrogen diffusivity upon the average size of the platelets suggests that the indiffusion of hydrogen is suppressed by the platelets.

  18. Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy

    NASA Astrophysics Data System (ADS)

    Zamanipour, Zahra; Krasinski, Jerzy S.; Vashaee, Daryoosh

    2013-04-01

    Boron precipitation process and its effect on electronic properties of p-type bulk nanostructured silicon germanium (Si0.8Ge0.2) compared with large grain polycrystalline Si0.8Ge0.2 have been studied. The structures were synthesized and their thermoelectric properties were measured versus temperature during heating and cooling cycles. The experimental data showed stronger temperature variation of Seebeck coefficient, carrier concentration, and conductivity in the nanostructured Si0.8Ge0.2 compared with the polycrystalline form indicating stronger boron precipitation in this structure. The electrical properties of both samples were calculated using a multi-band semi-classical model. The theoretical calculations confirm that the increase of boron precipitation in the nanostructured Si0.8Ge0.2 is responsible for its higher thermal instability. Since the thermoelectric properties of the nanostructured sample degrade as a result of thermal cycling, the material is appropriate only for continuous operation at high temperature without cooling.

  19. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  20. Absence of positronium formation in clean buried nanocavities in p-type silicon

    SciTech Connect

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Egger, W.; Sperr, P.; Koegel, G.

    2005-06-15

    Buried nanocavities at about 350 nm depth in Si were produced by thermal treatment of He implanted p-type (100) Si. The internal surfaces of the nanocavities were found free of impurity decorations by examining the high-momentum part of the Doppler-broadened positron annihilation spectra. Positron lifetime measurements with a pulsed slow positron beam show neither a short lifetime (125-150 ps) ascribable to parapositronium nor a longer lifetime (2-4 ns) ascribable to pick-off annihilation of orthopositronium. The lifetime of positrons trapped into nanocavities was found to be about 500 ps. The absence of positronium formation could be explained by an insufficient electron density and a lack of electron states in the band gap at the nanocavities internal surfaces produced in the p-type silicon.

  1. High-temperature elastic moduli of bulk nanostructured n - and p -type silicon germanium

    NASA Astrophysics Data System (ADS)

    Gladden, J. R.; Li, G.; Adebisi, R.; Firdosy, S.; Caillat, T.; Ravi, V.

    2010-07-01

    Resonant ultrasound spectroscopy (RUS) has been used to measure the elastic moduli of n - and p -type doped polycrystalline bulk nanostructured silicon germanium alloys at elevated temperatures. A direct contact RUS transducer system with a working temperature range up to 900 K was successfully constructed for these measurements. For higher temperatures (up to 1300 K), we employed a traditional buffer rod RUS system. Experimental results show the Young’s and shear moduli of p -type SiGe alloys monotonically decrease with increasing temperatures in the 300-1200 K range. The n -type samples show a marked stiffening beginning at 675 K which does not repeat upon cooling or subsequent reheating. We attribute the stiffening of the n -type samples to the thermally activated precipitation of the phosphorous dopant. Electrical resistivity and Seebeck coefficient data are also presented for both types of SiGe which support this conclusion.

  2. Direct Measurement of Electron Beam Induced Currents in p-type Silicon

    SciTech Connect

    Han, M.G.; Zhu, Y.; Sasaki, K.; Kato, T.; Fisher, C.A.J.; Hirayama, T.

    2010-08-01

    A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale.

  3. Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

    PubMed

    Yang, Chen; Barrelet, Carl J; Capasso, Federico; Lieber, Charles M

    2006-12-01

    We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems. PMID:17163733

  4. Accelerated light-induced degradation for detecting copper contamination in p-type silicon

    SciTech Connect

    Inglese, Alessandro Savin, Hele; Lindroos, Jeanette

    2015-08-03

    Copper is a harmful metal impurity that significantly impacts the performance of silicon-based devices if present in active regions. In this contribution, we propose a fast method consisting of simultaneous illumination and annealing for the detection of copper contamination in p-type silicon. Our results show that, within minutes, such method is capable of producing a significant reduction of the minority carrier lifetime. A spatial distribution map of copper contamination can then be obtained through the lifetime values measured before and after degradation. In order to separate the effect of the light-activated copper defects from the other metastable complexes in low resistivity Cz-silicon, we carried out a dark anneal at 200 °C, which is known to fully recover the boron-oxygen defect. Similar to the boron-oxygen behavior, we show that the dark anneal also recovers the copper defects. However, the recovery is only partial and it can be used to identify the possible presence of copper contamination.

  5. Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation

    NASA Astrophysics Data System (ADS)

    Cui, Jie; Grant, Nicholas; Lennon, Alison

    2014-12-01

    Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO2) was investigated. The anodic SiO2 was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3-5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/□ emitter and a LIA anodic SiO2 formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance-voltage measurements demonstrated a very low positive charge density of 3.4 × 1011 cm-2 and a moderate density of interface states of 6 × 1011 eV-1 cm-2. This corresponded to a silicon surface recombination velocity of 62 cm s-1, which is comparable with values reported for other anodic SiO2 films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 × 10-10 and 1.6 × 10-9 A cm-2 at 1 and -1 V, respectively, was measured for LIA SiO2 suggesting its potential application as insulation layer in IBC solar cells and a barrier for potential induced degradation.

  6. Scanning electrochemical microscopy investigations of monolayers bound to p-type silicon substrates.

    PubMed

    Ghilane, Jalal; Hauquier, Fanny; Fabre, Bruno; Hapiot, Philippe

    2006-09-01

    p-Si type electrodes modified with different organic monolayers were investigated by reaction with radical anion and cation electrogenerated at a microelectrode operating in the configuration of a scanning electrochemical microscope. The method proves to be a convenient tool for investigating both the quality and the redox properties of the layer as previously demonstrated on metallic electrodes especially when the sample cannot be electrically connected. Approach curves recorded with the different mediators were used to investigate the electron-transfer rates across alkyl monolayers bound to p-type silicon substrates. Preliminary results indicate that the interfacial electron transfer occurs via electron tunneling through the organic layer as generally described for SAMs grafted on gold electrodes. PMID:16944879

  7. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  8. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    SciTech Connect

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.

  9. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei; Jiang, Xuening; Xu, Hongxia

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  10. Evidence for an iron-hydrogen complex in p-type silicon

    SciTech Connect

    Leonard, S. Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-20

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E{sub v} + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10{sup −17} cm{sup 2}. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  11. Evidence for an iron-hydrogen complex in p-type silicon

    NASA Astrophysics Data System (ADS)

    Leonard, S.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Murphy, J. D.

    2015-07-01

    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10-17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.

  12. High performance p-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2005-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  13. Aluminum-natural oxide-P type silicon /MIS/ solar cells

    NASA Astrophysics Data System (ADS)

    Badura, E.; Zdanowicz, W.

    1980-12-01

    MIS (metal-interfacial region-semiconductor) solar cells are attractive because of their relatively high conversion efficiency. Their performance, however, is strongly affected by device preparation. Two methods are described for preparing Al - natural SiO - p-type Si cells which exhibit high photovoltaic values. The first, involving a 'nonsintered oxide' process, entails etching the active silicon surfaces in HF acid and exposing them to air at room temperature for 48 hours. The second method differs from the first only in that it requires the additional step of sintering the oxidized surfaces in a vacuum at about 500 C. In both cases, a semitransparent Al film is then applied to the oxide, after which an Al grid electrode and 70-nm SiOx antireflection coatings are deposited on the device. Measured against both the nonsintered cell and the Schottky barrier cell, the sintered assembly shows the highest open-circuit voltage (0.46-0.492), the highest fill factor (0.66-0.73), and the most efficient dark parameters.

  14. RF performances of inductors integrated on localized p+-type porous silicon regions

    NASA Astrophysics Data System (ADS)

    Capelle, Marie; Billoué, Jérôme; Poveda, Patrick; Gautier, Gaël

    2012-09-01

    To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.

  15. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells

    NASA Astrophysics Data System (ADS)

    Cuony, P.; Marending, M.; Alexander, D. T. L.; Boccard, M.; Bugnon, G.; Despeisse, M.; Ballif, C.

    2010-11-01

    Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (μc-Si), when used as a p-type layer in μc-Si thin-film solar cells. We show that p-nc-SiOx with its particular nanostructure increases μc-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiOx reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases μc-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.

  16. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    PubMed

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented. PMID:26879813

  17. High performance P-type thermoelectric materials and methods of preparation

    NASA Technical Reports Server (NTRS)

    Caillat, Thierry (Inventor); Borshchevsky, Alexander (Inventor); Fleurial, Jean-Pierre (Inventor)

    2002-01-01

    The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

  18. Silicone azide fireproof material

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

  19. Temperature driven p-n-p type conduction switching materials: current trends and future directions.

    PubMed

    Guin, Satya N; Biswas, Kanishka

    2015-04-28

    Modern technological inventions have been going through a "renaissance" period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field. PMID:25812630

  20. Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon

    NASA Technical Reports Server (NTRS)

    Weisz, S. Z.; Porras, A. Ramirez; Resto, O.; Goldstein, Y.; Many, A.; Savir, E.

    1997-01-01

    The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.

  1. Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodes

    SciTech Connect

    Dominey, R.N.; Lewis, N.S.; Bruce, J.A.; Bookbinder, D.C.; Wrighton, M.S.

    1982-01-27

    The improvement of H/sub 2/ evolution from two different types of catalytic p-type photocathode surfaces has been examined. p-Type Si has been platinized by phtotelectrochemically plating Pt(0) onto the Si surface. Such a photocathode shows significant improvement (compared to naked p-type Si) for photochemical H/sub 2/ evolution with respect to output photovoltage, fill factor, and overall efficiency. Such photocathodes having an optimun amount of Pt(0) give a pH-dependent output voltage with respect to the H/sub 2/O/H/sub 2/ couple, but the dependence is not a simple 59-mV/pH dependence. No pH dependence would be expected if Pt(0) formed a Schottky barrier when plated onto p-type Si. A second kind of H/sub 2/ evolution catalyst has been confined to the surface of p-type Si. Polymeric quantities of an electroactive N,N'-dialkyl-4,4'-bipridinium reagent, (PQ/sup 2 +/.)/sub n/, have been confined to the surface. The Br/sup -/ counterions of the polymer are then exchanged by PtCl/sub 6//sup 2 -/. Photoreduction then yields Pt(0) dispersed in the polymer. Such a surface is again significantly improved compared to naked p-type Si with respect to H/sub 2/ evolution. A comparison of the naked p-Si, the simply platinized, and the (PQ/sup 2 +//sup ///sup +//sub n/.nPt(0))/sub surf./ system is made and contrasted to the expected behavior of an external Schottky barrier photocell driving an electrolysis cell with a Pt cathode. Experiments with n-type MoS/sub 2/, n-type Si, Pt, Au, and W cathodes functionalized with the (PQ/sup 2 +//sup ///sup +/.)sub n/.nPt(0))/sub surf./ system compared to the same surface directly platinized confirm an important difference in the mechanism of H/sub 2/ evolution catalysis for the two surface catalyst systems. p-Type Si modified with optimum amounts of Pt(0) by direct platinization appears to give improved H/sub 2/ evolution efficiency by a mechanism where the Pt(0) serves as a catalyst that does not alter the interface energetics of the

  2. Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

    NASA Astrophysics Data System (ADS)

    Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, J.; Wan, Y.

    2015-02-01

    We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τbulk was found to increase from ˜500 μs to ˜1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3 < Eann < 0.7 eV. When the annihilated samples were phosphorus gettered at 880 °C or subject to 0.2 sun illumination for 24 h, τbulk was found to degrade. However, when the samples were subsequently annealed at temperatures between 250 and 400 °C, the defect could be re-annihilated. The experimental results suggest that the defect limiting the lifetime in the p-type FZ silicon is not related to fast diffusing metallic impurities but rather to a lattice-impurity or an impurity-impurity metastable defect.

  3. Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinning

    SciTech Connect

    Bocarsly, A.B.; Bookbinder, D.C.; Dominey, R.N.; Lewis, N.S.; Wrighton, M.S.

    1980-05-21

    Studies of p- and n-type Si electrodes are reported which show that semiconducting Si electrode surfaces do not allow efficient H/sub 2/ evolution in the dark (n type) or upon illumination with band gap or greater energy light (p type). The key experiment is that N,N'-dimethyl-4,4'-bipyridinium (PQ/sup 2 +/) is reversibly reduced at n-type Si in aqueous media at a pH where H/sub 2/ should be evolved at nearly the same potential, but no H/sub 2/ evolution current is observable. The PQ/sup 2+/+/.system may be useful as an electron-transfer mediator, since PQ/sup +/.can be used to effect generation of H/sub 2/ from H/sub 2/O using a heterogeneous catalyst. The PQ/sup +/.can be produced in an uphill sense by illumination of p-type Si in aqueous solutions. Studies of p-type Si in nonaqueous solvents show that PQ/sup 2 +/, PQ/sup +/., Ru(bpy)/sub 3//sup 2 +/, Ru(bpy)/sub 3//sup +/, and Ru(bpy)/sub 3//sup 0/ are all reducible upon illumination of the p-type Si. Interestingly, each species can be photoreduced at a potential approx. 500 mV more positive than at a reversible electrode in the dark. This result reveals that a p-type Si-based photoelectrochemical cell based on PQ/sup 2+/+/., PQ/sup +/l/sup 0//, Ru(bpy)/sub 3//sup 2+/+/, Ru(bpy)/sub 3//sup +/0/, or Ru(bpy)/sub 3//sup 0/-/ would all yield a common output photovoltage, despite the fact that the formal potentials for these couples vary by more than the band gap (1.1 V) of the photocathode. These data support the notion that p-type Si exhibits Fermi level pinning under the conditions employed.Surface chemistry is shown to be able to effect changes in interface kinetics for electrodes exhibiting Fermi level pinning.

  4. Macropore formation in p-type silicon: toward the modeling of morphology

    PubMed Central

    2014-01-01

    The formation of macropores in silicon during electrochemical etching processes has attracted much interest. Experimental evidences indicate that charge transport in silicon and in the electrolyte should realistically be taken into account in order to be able to describe the macropore morphology. However, up to now, none of the existing models has the requested degree of sophistication to reach such a goal. Therefore, we have undertaken the development of a mathematical model (phase-field model) to describe the motion and shape of the silicon/electrolyte interface during anodic dissolution. It is formulated in terms of the fundamental expression for the electrochemical potential and contains terms which describe the process of silicon dissolution during electrochemical attack in a hydrofluoric acid (HF) solution. It should allow us to explore the influence of the physical parameters on the etching process and to obtain the spatial profiles across the interface of various quantities of interest, such as the hole concentration, the current density, or the electrostatic potential. As a first step, we find that this model correctly describes the space charge region formed at the silicon side of the interface. PMID:25386103

  5. Macropore formation in p-type silicon: toward the modeling of morphology.

    PubMed

    Slimani, Amel; Iratni, Aicha; Henry, Hervé; Plapp, Mathis; Chazalviel, Jean-Noël; Ozanam, François; Gabouze, Noureddine

    2014-01-01

    The formation of macropores in silicon during electrochemical etching processes has attracted much interest. Experimental evidences indicate that charge transport in silicon and in the electrolyte should realistically be taken into account in order to be able to describe the macropore morphology. However, up to now, none of the existing models has the requested degree of sophistication to reach such a goal. Therefore, we have undertaken the development of a mathematical model (phase-field model) to describe the motion and shape of the silicon/electrolyte interface during anodic dissolution. It is formulated in terms of the fundamental expression for the electrochemical potential and contains terms which describe the process of silicon dissolution during electrochemical attack in a hydrofluoric acid (HF) solution. It should allow us to explore the influence of the physical parameters on the etching process and to obtain the spatial profiles across the interface of various quantities of interest, such as the hole concentration, the current density, or the electrostatic potential. As a first step, we find that this model correctly describes the space charge region formed at the silicon side of the interface. PMID:25386103

  6. Temperature Dependent Tensile Fracture Stress of n- and p-Type Filled-Skutterudite Materials

    SciTech Connect

    Salvador, James R.; Yang, Jihui; Wereszczak, Andrew A; Wang, Hsin; Cho, Jung Y

    2011-01-01

    While materials with excellent thermoelectric performance are most desirable for higher heat to electrical energy conversion efficiency, thermoelectric materials must also be sufficiently mechanically robust to withstand the large number of thermal cycles and vibrational stresses likely to be encountered while in service, particularly in automotive applications. Further these TE materials should be composed of non-toxic and naturally abundant constituent elements and be available as both n- and p-type varieties. Skutterudite based thermoelectric materials seemingly fit this list of criteria. In this contribution we report on the synthesis, tensile fracture strengths, low temperature electrical and thermal transport properties, and coefficients of thermal expansion (CTE), of the n-type skutterudite La{sub 0.05({+-}0.01)}Ba{sub 0.07({+-}0.04)}Yb{sub 0.08({+-}0.02)}Co{sub 4.00({+-}0.01)}Sb{sub 12.02({+-}0.03)} and the p-type Ce{sub 0.30({+-}0.02)}Co{sub 2.57({+-}0.02)}Fe{sub 1.43({+-}0.02)}Sb{sub 11.98({+-}0.03)}. Both materials have tensile fracture strengths that are temperature independent up to 500 C, and are in the range of {approx}140 MPa as measured by a three point bend flexure test fixture described herein. The CTE's were measured by dual rod dilatometry and were determined to be 10.3 ppm/C for the n-type material and 11.5 ppm/C for p-type up to 450 C.

  7. Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, Xinyu; Wan, Yimao; Bullock, James; Allen, Thomas; Cuevas, Andres

    2016-08-01

    This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ˜10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

  8. High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

    NASA Astrophysics Data System (ADS)

    Fernández, J.; Godignon, P.; Berberich, S.; Rebollo, J.; Brezeanu, G.; Millán, J.

    1996-09-01

    This paper presents the high frequency electrical characteristics and modelling of Al/SiO 2/ p-type 6HSiC structures. The oxide was thermally grown under dry conditions. Capacitance and conductance vs bias and frequency measurements have been performed in daylight and exposing the capacitors to u.v. light. The experimental Cm- Vg and Gm- Vg characteristics show hysteresis effects, which are more important when the samples are exposed to 254 nm u.v. light. This behaviour can be explained in terms of interface traps. The MOS structure modelling is based on an interface trap model in which the interface trap levels are considered to be continuously distributed in the SiC bandgap and only charge exchange between interface trap levels and the SiC bands is allowed. From this formulation and from the Gm- f characteristics, the interface state density and the interface trap time constant have been determined.

  9. Development of radiation hard edgeless detectors with current terminating structure on p-type silicon

    NASA Astrophysics Data System (ADS)

    Verbitskaya, E.; Eremin, V.; Ruggiero, G.

    2011-12-01

    The development of edgeless Si detectors was stimulated by the tasks of the total pp cross-section study in the TOTEM experiment at the Large Hadron Collider at CERN. For this, the dead region at the detector diced side should be reduced below 50 μm. This requirement is successfully realized in edgeless Si detectors with current terminating structure (CTS), which are now operating at LHC. The development of the experiment and future LHC upgrade need the elaboration of radiation hard version of edgeless Si detectors. The current investigation represents an extension in understanding on edgeless detectors operation and development of a new issue - edgeless detectors with CTS on p-type Si.

  10. Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

    SciTech Connect

    Ganagona, N. Vines, L.; Monakhov, E. V.; Svensson, B. G.

    2014-01-21

    In this work, a comprehensive study on the transition of divacancy (V{sub 2}) to divacancy-oxygen (V{sub 2}O) pairs in p-type silicon has been performed with deep level transient spectroscopy (DLTS). Czochralski grown, boron doped p-type, silicon samples, with a doping concentration of 2 × 10{sup 15} cm{sup −3} and oxygen content of 7.0 ± 1.5 × 10{sup 17} cm{sup −3}, have been irradiated with 1.8 MeV protons. Isothermal annealing at temperatures in the range of 200 °C–300 °C shows a close to one-to-one correlation between the loss in the donor state of V{sub 2} and the formation of the donor state of V{sub 2}O, located at 0.23 eV above the valence band edge. A concurrent transition takes place between the single acceptor states of V{sub 2} and V{sub 2}O, as unveiled by injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Applying the theory for diffusion limited reactions, the diffusivity of V{sub 2} in the studied p-type samples is determined to be (1.5 ± 0.7) × 10{sup −3}exp[−(1.31 ± 0.03) eV/kT] cm{sup 2}/s, and this represents the neutral charge state of V{sub 2}. Further, the data seem to favor a two-stage diffusion mechanism involving partial dissociation of V{sub 2}, although a one-stage process cannot be fully excluded.

  11. Silicone breast implant materials.

    PubMed

    Daniels, A U

    2012-01-01

    This opinion article has been written on request because of the recent public controversy over silicone breast implants produced by a now-defunct company, Poly Implant Prosthese (PIP) in France. More than 300,000 PIP devices have been implanted. The purposes of my article are to (1.) provide a general overview of silicone breast implant materials, (2.) to describe the general safety of these materials as reported to date, and (3.) to summarise current publicly available information about these aspects of the PIP prostheses. The materials covered are the silicone rubber from which the implant shells are made and the silicone gel used to fill the shell. The materials safety issues are biocompatibility (especially of the gel) and biodurability of the shell. The literature reviewed indicates that biocompatibility is not an issue with other current generation implants. However, biodurability is. A rough estimate of implant shell rupture rate is ~10+% at 10 years. Information is still emerging about the PIP implants. Initial regulatory disclosures suggest the PIP implants may have both biocompatibility and biodurability problems. They also suggest that PIP implants may have been produced using silicone materials not certified as medical grade. Governmental health and regulatory agencies are just now in the process of deciding what actions should be taken to protect patients. PMID:22826101

  12. On the recombination behaviour of iron in moderately boron-doped p-type silicon

    NASA Astrophysics Data System (ADS)

    Walz, D.; Joly, J.-P.; Kamarinos, G.

    1996-04-01

    The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level at E v +0.1 eV and the donor level of FeB pairs at E c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014 1016 cm-3 supposing the E c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.

  13. Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

    NASA Astrophysics Data System (ADS)

    Li, Shaoyuan; Ma, Wenhui; Zhou, Yang; Chen, Xiuhua; Xiao, Yongyin; Ma, Mingyu; Wei, Feng; Yang, Xi

    2014-05-01

    In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO3 system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO3 concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWs is significantly reduced when Ag+ ions concentrations are too high. The deposition behaviors of Ag+ ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon.

  14. Thermal and electromechanical characterization of top-down fabricated p-type silicon nanowires

    NASA Astrophysics Data System (ADS)

    Bosseboeuf, Alain; Allain, Pierre Etienne; Parrain, Fabien; Le Roux, Xavier; Isac, Nathalie; Jacob, Serge; Poizat, Alexis; Coste, Philippe; Maaroufi, Seiffedine; Walther, Arnaud

    2015-01-01

    In this paper we report thermal conductivity and piezoresistivity measurements of top-down fabricated highly boron doped (NA = 1.5 × 1019 cm-3) suspended Si nanowires. These measurements were performed in a cryogenic probe station respectively by using the 3 omega method and by in situ application of a longitudinal tensile stress to the nanowire under test with a direct four point bending of the Si nanowire die. Nanowires investigated have a thickness of 160 nm, a width in the 80-260 nm range and a length in the 2.5-5.2 μm range. We found that for these geometries, thermal conduction still obeys Fourier’s law and that, as expected, the thermal conductivity is largely reduced when the nanowires width is shrunk, but, to a lower extent than published values for nanowires grown by vapor-liquid-solid (VLS) processes. While a large giant piezoresistance effect was evidenced by various authors when a static stress is applied, we only observed a limited nanowire size dependence of the piezoresistivity in our experiments where a dynamical mechanical loading is applied. This confirms that the giant piezoresistance effect in unbiased Si nanowires is not an intrinsic bulk effect but is dominated by surface related effects in agreement with the piezopinch effect model. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam

  15. Silicon dendritic web material

    NASA Technical Reports Server (NTRS)

    Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

    1982-01-01

    The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

  16. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces

    SciTech Connect

    Bock, Robert; Schmidt, Jan; Brendel, Rolf

    2008-08-15

    The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p{sup +} regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 {mu}m) and line networks of self-assembled nanostructures (lateral dimension of {<=}50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of {<=}7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of {approx}30 nm) are found within the bulk of the self-assembled line networks.

  17. Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

    NASA Astrophysics Data System (ADS)

    Muaz, A. K. M.; Hashim, U.; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L.

    2016-07-01

    In this paper, sol-gel method spin coating technique is adopted to prepare nanoparticles titanium dioxide (TiO2) thin films. The prepared TiO2 sol was synthesized using titanium butoxide act as a precursor and subjected to deposited on the p-type silicon oxide (p-SiO2) and glass slide substrates under room temperature. The effect of different alcoholic solvents of methanol and ethanol on the structural, morphological, optical and electrical properties were systematically investigated. The coated TiO2 thin films were annealed in furnace at 773 K for 1 h. The structural properties of the TiO2 films were examined with X-ray Diffraction (XRD). From the XRD analysis, both solvents showing good crystallinity with anatase phase were the predominant structure. Atomic Force Microscopy (AFM) was employed to study the morphological of the thin films. The optical properties were investigated by Ultraviolet-visible (UV-Vis) spectroscopy were found that ethanol as a solvent give a higher optical transmittance if compare to the methanol solvent. The electrical properties of the nanoparticles TiO2 thin films were measured using two-point-probe technique.

  18. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material.

    PubMed

    Xian, Xiaojun; Yan, Kai; Zhou, Wei; Jiao, Liying; Wu, Zhongyun; Liu, Zhongfan

    2009-12-16

    We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics. PMID:19923654

  19. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material

    NASA Astrophysics Data System (ADS)

    Xian, Xiaojun; Yan, Kai; Zhou, Wei; Jiao, Liying; Wu, Zhongyun; Liu, Zhongfan

    2009-12-01

    We demonstrate herein that organic metal tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) can serve as an ideal material for source and drain electrodes to build unipolar p-type single-walled carbon nanotube (SWNTs) field-effect transistors (FETs). SWNTs were synthesized by the chemical vapor deposition (CVD) method on silicon wafer and then TTF-TCNQ was deposited by thermal evaporation through a shadow mask to form the source and drain contacts. An SiO2 layer served as the gate dielectric and Si was used as the backgate. Transfer characteristics show that these TTF-TCNQ contacted devices are Schottky barrier transistors just like conventional metal contacted SWNT-FETs. The most interesting characteristic of these SWNT transistors is that all devices demonstrate the unipolar p-type transport behavior. This behavior originates from the unique crystal structure and physical properties of TTF-TCNQ and this device may have potential applications in carbon nanotube electronics.

  20. Silicon material task review

    NASA Technical Reports Server (NTRS)

    Lorenz, J. H.

    1986-01-01

    The objectives of the Flat-plate Solar Array (FSA) Project Silicon Material Task are to evaluate technologies, new and old; to develop the most promising technologies; to establish practicality of the processes to meet production, energy use, and economic criteria; and to develop an information base on impurities in polysilicon and to determine their effects on solar cell performance. The approach involves determining process feasibility, setting milestones for the forced selection of the processes, and establishing the technical readiness of the integrated process.

  1. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    NASA Astrophysics Data System (ADS)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  2. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  3. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  4. Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement.

    PubMed

    Yang, Yongliang; Li, Xinxin

    2011-01-01

    The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO(2) interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis. PMID:21135460

  5. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates

    SciTech Connect

    Lenshin, A. S. Kashkarov, V. M.; Seredin, P. V.; Spivak, Yu. M.; Moshnikov, V. A.

    2011-09-15

    The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates.

  6. Silicone Cerenkov-Radiator Material

    NASA Technical Reports Server (NTRS)

    Balasubrahmanyan, V.; Ormes, J. F.; Streitmatter, R. E.

    1984-01-01

    Dyes enhance visible output. Three fluorescent dyes combine to increase output of silicone material that normally has low yield of visible Cerenkov radiation by converting large amount of available ultraviolet photons into visible light.

  7. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    SciTech Connect

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  8. Determination of phonon decay rate in p-type silicon under Fano resonance by measurement of coherent phonons

    NASA Astrophysics Data System (ADS)

    Kato, Keiko; Oguri, Katsuya; Sanada, Haruki; Tawara, Takehiko; Sogawa, Tetsuomi; Gotoh, Hideki

    2015-09-01

    We determine phonon decay rate by measuring the temperature dependence of coherent phonons in p-type Si under Fano resonance, where there is interference between the continuum and discrete states. As the temperature decreases, the decay rate of coherent phonons decreases, whereas that evaluated from the Raman linewidth increases. The former follows the anharmonic decay model, whereas the latter does not. The different temperature dependences of the phonon decay rate of the two methods originate from the way that the continuum state, which originates from the Fano resonance, modifies the time- and frequency-domain spectra. The observation of coherent phonons is useful for evaluating the phonon decay rate free from the interaction with the continuum state and clarifies that the anharmonic decay is dominant in p-type Si even under Fano resonance.

  9. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

    PubMed Central

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  10. Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells.

    PubMed

    Baek, Seungsin; Lee, Jeong Chul; Lee, Youn-Jung; Iftiquar, Sk Md; Kim, Youngkuk; Park, Jinjoo; Yi, Junsin

    2012-01-01

    Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels. PMID:22257671

  11. Inorganic Nano Light-Emitting Transistor: p-Type Porous Silicon Nanowire/n-Type ZnO Nanofilm.

    PubMed

    Lee, Sang Hoon; Kim, Jong Woo; Lee, Tae Il; Myoung, Jae Min

    2016-08-01

    An inorganic nano light-emitting transistor (INLET) consisting of p-type porous Si nanowires (PoSiNWs) and an n-type ZnO nanofilm was integrated on a heavily doped p-type Si substrate with a thermally grown SiO2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I-V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V g ). As the V g is changed from 0 V to -20 V, the current level and light-emission intensity in the orange-red range increase by three and two times, respectively, with a forward bias of 20 V in the p-n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built-in potential at the p-n junction by the applied gate electric field. PMID:27378257

  12. Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Liu, AnYao; Phang, Sieu Pheng; Rougieux, Fiacre E.; Macdonald, Daniel

    2015-08-01

    Significant reductions in interstitial iron (Fei) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250 °C-700 °C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fei concentrations were much less significant. The precipitation of Fei is ruled out as a possible explanation for the significant reductions. The hydrogen passivation of Fei, which is the complexing of monatomic H and isolated Fei forming a recombination-inactive hydride, is proposed as the most probable model to explain the reductions. Under the assumption that the reduction is caused by the hydrogenation of Fei, the reactants' charge states in the hydrogenation reaction are determined by two independent approaches. In the first approach, illumination is found to have a small but detectible impact on the reaction kinetics in the lower temperature range. The dominating reactants' charge states are concluded to be Fe0 + H+ as revealed by modelling the injection-dependent charge states of isolated Fei and monatomic H. In the second approach, the reaction kinetics are fitted with the Arrhenius equation over a large temperature range of 250 °C-700 °C. A reasonable fit is only obtained when assuming the reacting charge states are Fe0 + H+. This supports the conclusion on the reacting charge states and also gives a value of the activation energy of hydrogenation in the 0.7-0.8 eV range.

  13. Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

    SciTech Connect

    Goto, Masaki; Amano, Ryo; Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2014-04-14

    Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

  14. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    NASA Astrophysics Data System (ADS)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  15. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    SciTech Connect

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-24

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  16. Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

    NASA Astrophysics Data System (ADS)

    Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

    2015-04-01

    One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

  17. Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

    SciTech Connect

    Ivanov, A. M.; Kotina, I. M.; Lasakov, M. S.; Strokan, N. B.; Tuhkonen, L. M.

    2010-08-15

    The state of the interface between p-silicon and a nanometer-thick insulator is analyzed. DLTS spectra, obtained with deep centers in the bulk of the structure and its surface states recharged, are examined. The nature of the noise as a function of the reverse bias is determined for evaluating the possibility of using the structure as a nuclear radiation detector. A conclusion is drawn that the barrier used in the structure has a higher quality when nanometer-thick aluminum nitride films are deposited by dc, rather than ac, magnetron sputtering.

  18. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    NASA Astrophysics Data System (ADS)

    Calderini, G.; Bagolini, A.; Bomben, M.; Boscardin, M.; Bosisio, L.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2014-11-01

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  19. Origins of the p-Type Nature and Cation Deficiency in Cu2O and Related Materials

    SciTech Connect

    Raebiger, H.; Lany, S.; Zunger, A.

    2007-01-01

    While most of crystalline wide gap oxides are both stoichiometric and insulating, a handful of them including ZnO and In{sub 2}O{sub 3} are naturally anion-deficient and electron conductors. Even fewer of the oxides are naturally cation-deficient and hole conductors, the arch-type of which is Cu{sub 2}O. Based on first principles calculation of equilibrium nonstoichiometry and defect stability, we explain why the Cu{sup (I)}(d{sup 10}) oxide-based materials are both p-type and naturally cation-deficient, and why cation vacancies lead to delocalized, conductive states, whereas in other oxides (e.g., ZnO and MgO), they lead to localized, nonconductive states.

  20. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

    SciTech Connect

    Liu, Yanhong; Li, La; Wang, Song; Gao, Ping; Pan, Lujun; Zhang, Jialiang; Zhou, Peng; Li, Jinhua; Weng, Zhankun

    2015-02-09

    In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

  1. Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application

    SciTech Connect

    Yamada, A.; Kenne, J.; Konagai, M.; Takahashi, K.

    1985-02-01

    Wide optical band-gap (2.0--2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures. The photochemically prepared p-type films showed higher dark conductivities and lower activation energies. For an optical band gap of 2.0 eV a high conductivity of 7.0 x 10/sup -5/ (S cm/sup -1/) and a low activation energy of 0.33 eV have been measured. The first trial of these wide band-gap, fairly conductive films as a window layer in a p-i-n solar cell showed the high conversion efficiency of 9.46% under AM1 insolation.

  2. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials.

    PubMed

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-01-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm(-2) at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability. PMID:26330371

  3. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-09-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ~1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm-2 at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability.

  4. Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

    PubMed Central

    Fu, Chenguang; Bai, Shengqiang; Liu, Yintu; Tang, Yunshan; Chen, Lidong; Zhao, Xinbing; Zhu, Tiejun

    2015-01-01

    Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron–phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm−2 at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability. PMID:26330371

  5. Thick-film materials for silicon photovoltaic cell manufacture

    NASA Technical Reports Server (NTRS)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  6. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  7. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Kim, Sun-Jae; Mo, Yeon-Gon; Kim, Hye-Dong; Han, Min-Koo

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (ΔVTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (ΔVTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  8. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Sung-Hwan Choi,; Sun-Jae Kim,; Yeon-Gon Mo,; Hye-Dong Kim,; Min-Koo Han,

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (Δ VTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (Δ VTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  9. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    NASA Astrophysics Data System (ADS)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-07-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime (τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  10. Material-induced shunts in multicrystalline silicon solar cells

    SciTech Connect

    Breitenstein, O. Bauer, J.; Rakotoniaina, J. P.

    2007-04-15

    By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

  11. Silicon mitigates heavy metal stress by regulating P-type heavy metal ATPases, Oryza sativa low silicon genes, and endogenous phytohormones

    PubMed Central

    2014-01-01

    Background Silicon (Si) application has been known to enhance the tolerance of plants against abiotic stresses. However, the protective mechanism of Si under heavy metals contamination is poorly understood. The aim of this study was to assess the role of Si in counteracting toxicity due to cadmium (Cd) and copper (Cu) in rice plants (Oryza sativa). Results Si significantly improved the growth and biomass of rice plants and reduced the toxic effects of Cd/Cu after different stress periods. Si treatment ameliorated root function and structure compared with non-treated rice plants, which suffered severe root damage. In the presence of Si, the Cd/Cu concentration was significantly lower in rice plants, and there was also a reduction in lipid peroxidation and fatty acid desaturation in plant tissues. The reduced uptake of metals in the roots modulated the signaling of phytohormones involved in responses to stress and host defense, such as abscisic acid, jasmonic acid, and salicylic acid. Furthermore, the low concentration of metals significantly down regulated the mRNA expression of enzymes encoding heavy metal transporters (OsHMA2 and OsHMA3) in Si-metal-treated rice plants. Genes responsible for Si transport (OsLSi1 and OsLSi2), showed a significant up-regulation of mRNA expression with Si treatment in rice plants. Conclusion The present study supports the active role of Si in the regulation of stresses from heavy metal exposure through changes in root morphology. PMID:24405887

  12. Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

    SciTech Connect

    Kumar, Vinod; Singh, Neetu; Kapoor, Avinashi; Ntwaeaborwa, Odireleng M.; Swart, Hendrik C.

    2013-11-15

    Graphical abstract: - Highlights: • n-AZB/p-Si heterojunction diodes were formed. • n-AZB/p-Si diode annealed at 700 °C showed best rectifying behavior. • Zn{sub 2}SiO{sub 4} was formed at 800 °C. • n and ϕ{sub b} were estimated to be 1.63 and 0.4 eV, respectively, at 700 °C. • Tailoring of BG was attributed to annealing induced stresses in the films. - Abstract: In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol–gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 °C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 °C and increased to 3.30 eV at 800 °C probably due to the formation of Zn{sub 2}SiO{sub 4} at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 °C.

  13. Novel silicone materials for LED packaging

    NASA Astrophysics Data System (ADS)

    Norris, Ann W.; Bahadur, Maneesh; Yoshitake, Makoto

    2005-09-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers for use as encapsulants and lenses for many next generation LED device designs. Silicones can function in several roles that include protective lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their high transparency in the UV-visible region, controlled refractive index (RI), stable thermo-mechanical properties, and tuneable hardness from soft gels to hard resins. The high current and high operating temperatures of HB-LEDs present a significant materials challenge for traditional organic materials such as epoxies, acrylics and cyclo olefin copolymers (COC) that lack the thermal and molecular stability needed to provide optical clarity and mechanical performance required for next generation devices. In addition, the retention of optical clarity over the lifetime of the device, which involves long term exposure to high flux in the UV-visible wavelength region, is a critical requirement. Silicones have been demonstrated to provide the required stability. This paper will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a surmountable challenge for high throughput LED device manufacturing.

  14. Ternary chalcogenides Cs2Zn3Se4 and Cs2Zn3Te4 : Potential p -type transparent conducting materials

    DOE PAGESBeta

    Shi, Hongliang; Saparov, Bayrammurad; Singh, David J.; Sefat, Athena S.; Du, Mao-Hua

    2014-11-11

    Here we report prediction of two new ternary chalcogenides that can potentially be used as p-type transparent conductors along with experimental synthesis and initial characterization of these previously unknown compounds, Cs2Zn3Ch4 (Ch = Se, Te). In particular, the structures are predicted based on density functional calculations and confirmed by experiments. Phase diagrams, electronic structure, optical properties, and defect properties of Cs2Zn3Se4 and Cs2Zn3Te4 are calculated to assess the viability of these materials as p-type TCMs. Cs2Zn3Se4 and Cs2Zn3Te4, which are stable under ambient air, display large optical band gaps (calculated to be 3.61 and 2.83 eV, respectively) and have smallmore » hole effective masses (0.5-0.77 me) that compare favorably with other proposed p-type TCMs. Defect calculations show that undoped Cs2Zn3Se4 and Cs2Zn3Te4 are p-type materials. However, the free hole concentration may be limited by low-energy native donor defects, e.g., Zn interstitials. Lastly, non-equilibrium growth techniques should be useful for suppressing the formation of native donor defects, thereby increasing the hole concentration.« less

  15. P-type ATPases.

    PubMed

    Palmgren, Michael G; Nissen, Poul

    2011-01-01

    P-type ATPases form a large superfamily of cation and lipid pumps. They are remarkably simple with only a single catalytic subunit and carry out large domain motions during transport. The atomic structure of P-type ATPases in different conformations, together with ample mutagenesis evidence, has provided detailed insights into the pumping mechanism by these biological nanomachines. Phylogenetically, P-type ATPases are divided into five subfamilies, P1-P5. These subfamilies differ with respect to transported ligands and the way they are regulated. PMID:21351879

  16. Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing

    NASA Astrophysics Data System (ADS)

    Murakoshi, Atsushi; Iwase, Masao; Niiyama, Hiromi; Koike, Mitsuo; Suguro, Kyoichi

    2013-07-01

    A contact resistivity of 6.9×10-9 Ω.cm2 has been obtained in an AlSi (1 wt %)-Cu (0.5 wt %) alloy/silicon system by using heavy-dose ion implantations of germanium and boron combined with low-temperature annealing. The analysis of the combined state showed that B12 cluster was incorporated and the supersaturation activation layer was formed into the region where germanium separated. Separated germanium is expected to have high interface state density. It is considered that this interface state density also has a Fermi level, and in order to reduce the difference from the Fermi level of the substrate, the charge moves to interface state density from the substrate. As a result, it is not based on a metallic material but a work function becomes small because pinning by which a Fermi level is fixed to interface state density occurs owing to the substrate/metal interface. It is considered to be attributable to the existence of a Ge-rich layer formed by low-temperature annealing, and a supersaturation activation layer that lowers contact resistance was formed.

  17. Encapsulation of PV cells using silicone materials

    NASA Technical Reports Server (NTRS)

    Dennis, W. E.

    1980-01-01

    The use of silicone materials as thin conformal coatings for the protection of photovoltaic cells is investigated. Five silicone materials ranging from soft elastomers to high modulus resins were evaluated after exposure to UV radiation, outdoor weathering, thermal cycling at high humidity and temperature cycling from -40 C to 90 C. The effects of these tests were monitored by periodically measuring the output of two-cell circuit strings encapsulated with the various materials, and one exceptional silicone coating for which no significant changes in cell output were noted after 300 days was chosen as the best of the candidates. Because only a thin coating of the substance is needed, material costs 60% lower than those of previous encapsulants are now possible.

  18. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

    DOEpatents

    Guha, Subhendu; Ovshinsky, Stanford R.

    1990-02-02

    A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

  19. Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

    DOEpatents

    Welch, James D.

    2000-01-01

    Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  20. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  1. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  2. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  3. Silicon-on-insulator materials and devices

    SciTech Connect

    Hosack, H.H.

    1989-01-01

    Silicon-on-insulator (SOI) has emerged during the past several years as the most promising approach to satisfying the increasingly demanding requirements for integrated circuits tolerant to total-dose X rays as well as to transient radiation pulses and high-energy particles. The basic mechanisms of radiation damage and circuit performance implications in SOI are similar in some respects to the effects in other integrated circuit technologies; however, there are several unique effects and device-related consequences that are available due to the thin silicon layers and buried oxide insulator used in the SOI device structure. The basic features of SOI materials and their fabrication, as well as the unique areas where radiation effects in SOI devices differ from those in devices produced on bulk silicon. The fabrication requirements for materials for complementary metal-oxide semiconductors (CMOS) and bipolar SOI devices are considered in this paper as well as the relationship between material fabrication and device requirements.

  4. Preparation and LPG-gas sensing characteristics of p-type semiconducting LaNbO4 ceramic material

    NASA Astrophysics Data System (ADS)

    Balamurugan, C.; Lee, D.-W.; Subramania, A.

    2013-10-01

    Lanthanam niobate (LaNbO4) nanopowder was synthesized by a low temperature solution-based process. Thermal analysis TG/DTA, XRD, SEM, TEM, EDX, impedance analysis and Brunauer-Emmett-Teller (BET) were used to characterize the precursor and the calcined LaNbO4 powders. The gas sensing behavior of LaNbO4 nanopowder was studied with gases like liquid petroleum gas (LPG), ammonia (NH3), and ethanol (C2H5OH), as a function of various controlling factors like operating temperature, concentration of the gas and response time. It revealed that LaNbO4 is a very promising material for the detection of LPG (80%) and NH3 (59%) at relatively lower operating temperatures.

  5. Thick film silicon growth techniques. [die materials

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.; White, V. E.

    1973-01-01

    The research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.

  6. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices. PMID:19076042

  7. Thermodynamically uphill reduction of a surface-confined N,N'-dialkyl-4,4'-bipyridinium derivative on illuminated p-type silicon surfaces

    SciTech Connect

    Bookbinder, D.C.; Wrighton, M.S.

    1980-07-16

    Results pertaining to a chemically derivatized p-type semiconductor photocathode surface are reported. The reduced form of N,N'-dimethyl-4,4'-bipyridinium comes into rapid redox equilibrium with aqueous (pH < 6) solutions containing suspensions of Pt to evolve Hg; the H/sub 2/ evolution can also be catalyzed by hydrogenase. Included are results for derivatized Pt to establish the thermodynamics for the surface-confined reagents. Possible applications in bioelectrochemistry and in electrochronic displays with reversible electrodes functionalized with the bipyridinium reagent were noted. 2 figures. (DP)

  8. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO{sub 3} buffer layer

    SciTech Connect

    Wang Yuzhan; Wee, Andrew T. S.; Cao Liang; Qi Dongchen; Chen Wei; Gao Xingyu

    2012-08-01

    We demonstrate that the interfacial hole injection barrier {Delta}{sub h} between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO{sub 3} buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO{sub 3} buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of {Delta}{sub h} is shown to be independent of the thickness of MoO{sub 3} interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO{sub 3} buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier.

  9. Process Research of Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1984-01-01

    A passivation process (hydrogenation) that will improve the power generation of solar cells fabricated from presently produced, large grain, cast polycrystalline silicon (Semix), a potentially low cost material are developed. The first objective is to verify the operation of a DC plasma hydrogenation system and to investigate the effect of hydrogen on the electrical performance of a variety of polycrystalline silicon solar cells. The second objective is to parameterize and optimize a hydrogenation process for cast polycrystalline silicon, and will include a process sensitivity analysis. The sample preparation for the first phase is outlined. The hydrogenation system is described, and some early results that were obtained using the hydrogenation system without a plasma are summarized. Light beam induced current (LBIC) measurements of minicell samples, and their correlation to dark current voltage characteristics, are discussed.

  10. Role of the buffer at the interface of intrinsic a-Si:H and p-type a-Si:H on amorphous/crystalline silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Meng, Fanying; Shen, Leilei; Shi, Jianhua; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Liu, Zhengxin

    2015-11-01

    We investigate the influence of the different buffer at the interface between the intrinsic a-Si:H and p-type a-Si:H layers on amorphous/crystalline silicon heterojunction (SHJ) solar cells performance. It is demonstrated that the ultrathin buffer at interface of intrinsic a-Si:H and p-type a-Si:H, obtained by H-rich plasma treatment on the initial intrinsic a-Si:H passivation layer, can significantly enhance the minority carrier lifetime and decrease the emitter saturation current density. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy analyses indicate that the initial intrinsic a-Si:H films become dense and less defected as a result of the relaxation and reconstruction when they are treated during the H-rich plasma environment. Based on this finding combined with the optimization of surface texturization of the silicon wafer, this work allows us to reach very high Voc values over 730 mV without losses on fill factor, the 100 μm, 125 × 125 mm2 SHJ solar cells were fabricated with industry-compatible process, yielding the efficiency up to 22.5%.

  11. An all-solid-state perovskite-sensitized solar cell based on the dual function polyaniline as the sensitizer and p-type hole-transporting material

    NASA Astrophysics Data System (ADS)

    Xiao, Yaoming; Han, Gaoyi; Chang, Yunzhen; Zhou, Haihan; Li, Miaoyu; Li, Yanping

    2014-12-01

    High performance dual function of polyaniline (PANI) with brachyplast structure is synthesized by using a two-step cyclic voltammetry (CV) approach onto the fluorinated tin oxide (FTO) glass substrate, which acts as the sensitizer and p-type hole-transporting material (p-HTM) for the all-solid-state perovskite-sensitized solar cell (ass-PSSC) due to its π-π* transition and the localized polaron. The ass-PSSC based on the PANI delivers a photovoltaic conversion efficiency of 7.34%, and reduces from 7.34% to 6.71% after 1000 h, thereby 91.42% of the energy conversion efficiency is kept, indicating the device has a good long-term stability.

  12. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics. PMID:27479904

  13. Replacement of silicone polymer A with silicone polymer B and the subsequent characterization of the new cellular silicone materials

    SciTech Connect

    Schneider, J.W.

    1994-04-01

    The purpose of this project is to replace silicone polymer A with silicone polymer B produced by Vendor B. Silicone polymer B and the resulting B-50 cellular silicone have been used to produce cushions for the W87 program. Approximately 5.5 years of stress relaxation aging study data as well as actual part surveillance data have been collected, characterizing the stockpile life performance of the B-50 cellular silicone cushion material. Process characterization of new cellular silicone materials as a result of replacing silicone polymer A with silicone polymer B has been completed. Load deflection requirements for the new cellular silicone materials based on silicone polymer B have been met. The silicone polymer B based cellular silicone materials must be compounded at densities of approximately 0.03 g/cm{sup 3} less than the silicone polymer A based cellular silicone materials in order to achieve the same load deflection requirements has also been demonstrated. The change in silicone polymers from A to B involved a decrease in volatile content as well as a decrease in part shrinkage.

  14. Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

    NASA Astrophysics Data System (ADS)

    Farrell, L.; Norton, E.; O'Dowd, B. J.; Caffrey, D.; Shvets, I. V.; Fleischer, K.

    2015-07-01

    In this letter, we demonstrate a low temperature (≈345 °C) growth method for Cu deficient CuCrO2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 μS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably, despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means that the material can be deposited on flexible substrates. As this is a solution based technique, it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.

  15. Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-).

    PubMed

    Ohta, Hiromichi; Sugiura, Kenji; Koumoto, Kunihito

    2008-10-01

    Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3. PMID:18821809

  16. Acoustic microscopy of silicon carbide materials

    NASA Technical Reports Server (NTRS)

    Khandelwal, P. K.; Heitman, P. W.; Yuhas, D.; Vorres, C. L.

    1982-01-01

    It is shown that scanning laser acoustic microscopy (SLAM) is able to detect such fracture-controlling flaws in dense silicon carbide materials as surface voids, whose diameter-by-depth size is a minimum of 75 by 17 microns in reaction-bonded SiC and 68 by 25 microns in alpha-SiC. Surface conditions such as pitting, which have been found to limit the discernibility of drilled holes, become important when pit and drilled hole sizes become comparable.

  17. Maxillofacial Prosthetic Materials- An Inclination Towards Silicones

    PubMed Central

    Choudhary, Sunita; Garg, Hemlata; H.G., Jagadeesh

    2014-01-01

    There have been constant searches and researches which are taking place in the field of dental materials to best suit the ideal selection criteria to satisfy the functionality, biocompatibility, aesthetics as well as the durability as a maxillofacial material. Among all the different materials, Silicone is the most popularly used, but still studies are carried out to overcome their weaknesses and to come out with a material which can be labeled as the “ideal maxillofacial prosthetic material”. This article comprises the materials which were and are in use and the reason for their unpopularity. It also gives us a scope to understand the major fields where the materials lack and thus needs improvement to render an individual with the best maxillo-facial prosthesis. PMID:25654054

  18. Reliability of two sintered silicon nitride materials

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Sanders, W. A.; Pierce, L. A.

    1985-01-01

    Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.

  19. Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

    SciTech Connect

    Rangel-Kuoppa, Victor-Tapio; Chen Gang; Jantsch, Wolfgang

    2011-12-23

    Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

  20. Material properties of silicon and silicon carbide foams

    NASA Astrophysics Data System (ADS)

    Jacoby, Marc T.; Goodman, William A.

    2005-08-01

    Silicon and silicon carbide foams provide the lightweighting element for Schafer Corporation's silicon and silicon carbide lightweight mirror systems (SLMSTM and SiC-SLMSTM). SLMSTM and SiC-SLMSTM provide the enabling technology for manufacturing lightweight, athermal optical sub-assemblies and instruments. Silicon and silicon carbide foam samples were manufactured and tested under a Schafer-funded Internal Research and Development program in various configurations to obtain mechanical and thermal property data. The results of the mechanical tests that are reported in this paper include Young's modulus, compression strength, tensile strength, Poisson's ratio and vibrational damping. The results of the thermal tests include thermal conductivity and coefficient of thermal expansion.

  1. Cz-Silicon Produced from Solar-Grade and Recycled Materials. Part II: Investigating Performances of Solar Cell Produced from Solar-Grade Cz-Silicon

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Øvrelid, Eivind Johannes; Di Sabtino, Marisa; Juel, Mari; Tranell, Gabriella

    2015-03-01

    This paper is the second of two, investigating the properties of P-type Cz-silicon materials and solar cells produced with recycled silicon and Elkem Solar Silicon (ESS) materials. While the focus on the first work was on the bulk properties and grown defects of the material, the current study focuses on the solar cell performances. In the processing of the solar cells, the phosphorous diffusion process was optimized to improve the bulk properties and thus to maximize the final solar cell characteristics. Results from the characterization of material defects suggest that the performances of the experimental ingots are limited by the activated grown-in defects, which should be strictly controlled during crystal growth and solar cell processing. The solar cells produced from the investigated ingots showed efficiency values up to 18.5 pct and fill factor values up to 79 pct, comparable to conventional silicon produced from poly silicon. Solar cells produced from mixed recycled and ESS material exhibit a better performance than 100 pct recycled material. Boron and oxygen concentration levels and net doping level showed a concurrent effect on light-induced degradation (LID). Appropriate compensation was finally demonstrated to be an efficient way to improve solar cells efficiency of Cz-silicon produced from recycled silicon, even though higher dopant concentration incurred relatively faster LID.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1984-01-01

    Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

  3. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  4. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  5. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

    SciTech Connect

    Dao, Vinh Ai; Heo, Jongkyu; Choi, Hyungwook; Kim, Yongkuk; Park, Seungman; Jung, Sungwook; Lakshminarayan, Nariangadu; Yi, Junsin

    2010-05-15

    The influence of various parameters such as buffer intrinsic layers, back-surface fields, densities of interface defects (D{sub it}), the resistivity of p-type silicon substrates ({rho}) and then work function of transparent conductive oxide ({phi}{sub TCO}) on heterojunction with intrinsic thin-layer (HIT) solar cell performance was investigated using software simulation. Automat for the simulation of heterostructures (AFORS-HET) software was used for that purpose. Our results indicate that band bending, which is determined by the band offsets at the buffer intrinsic/c-Si and/or the c-Si/back-surface field heterointerface, could be critical to solar cell performance. The effect of band bending on solar cell performance and the dependence of cell performance on {rho} and {phi}{sub TCO} were investigated in detail. Eventually, suggestive design parameters for HIT solar cell fabrication are proposed. (author)

  6. Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

    NASA Astrophysics Data System (ADS)

    Lim, Han-Sin; Kwon, Oh-Kyong

    2009-03-01

    An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-film transistors (TFTs) and a p-intrinsic-metal (p-i-m) diode is proposed for image scanning and touch sensing functions. Because it is a very difficult challenge to integrate both display pixels and optical sensing circuits into the restricted pixel area, the number of additional devices and control signal lines must be minimized. Therefore, two p-type TFTs, one p-i-m diode, one capacitor, and one signal line are added to display pixel for the proposed optical sensing circuit. Active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED) pixels with the proposed optical sensing circuit have image scanning and touch sensing functions, respectively. Through the measurement of the proposed circuit under the condition of incident light varying from 0 to 10,000 lx, we verified that the dynamic and output ranges of the proposed circuit are 30 dB and 1.5 V, respectively.

  7. Efficient bifacial perovskite solar cell based on a highly transparent poly(3,4-ethylenedioxythiophene) as the p-type hole-transporting material

    NASA Astrophysics Data System (ADS)

    Xiao, Yaoming; Han, Gaoyi; Wu, Jihuai; Lin, Jeng-Yu

    2016-02-01

    A novel bifacial perovskite solar cell (PSC) is devised and prepared by using a highly transparent poly(3,4-ethylenedioxythiophene) (PEDOT) electrode. The PEDOT is used as the p-type hole-transporting material (HTM) due to the well matched band positions for the charge separation and transport. Moreover, the PEDOT layer can play a role of electron blocking layer at the CH3NH3PbI3/PEDOT interface to reduce the electron recombination rate because of its LUMO level is higher than that of the perovskite sensitizer. As a result, the bifacial PSC based on the PEDOT HTM yields front and rear efficiencies of 12.33% and 11.78% respectively, which are higher than those of the PSC without the PEDOT HTM (8.67% and 8.27% of the front and rear efficiencies). And the front efficiency is only decreased by 4.46% to the rear efficiency. These promising results highlight the potential application of the PEDOT in the cost-effective and transparent PSC, which could be used in the bifacial solar cell and tandem solar cell.

  8. Area Reports. Advanced materials and devices research area. Silicon materials research task, and advanced silicon sheet task

    NASA Technical Reports Server (NTRS)

    1986-01-01

    The objectives of the Silicon Materials Task and the Advanced Silicon Sheet Task are to identify the critical technical barriers to low-cost silicon purification and sheet growth that must be overcome to produce a PV cell substrate material at a price consistent with Flat-plate Solar Array (FSA) Project objectives and to overcome these barriers by performing and supporting appropriate R&D. Progress reports are given on silicon refinement using silane, a chemical vapor transport process for purifying metallurgical grade silicon, silicon particle growth research, and modeling of silane pyrolysis in fluidized-bed reactors.

  9. Space Environment Effects on Silicone Seal Materials

    NASA Technical Reports Server (NTRS)

    deGroh, Henry C., III; Daniels, Christopher C.; Dever, Joyce A.; Miller, Sharon K.; Waters, Deborah L.; Finkbeiner, Joshua R.; Dunlap, Patrick H.; Steinetz, Bruce M.

    2010-01-01

    A docking system is being developed by the NASA to support future space missions. It is expected to use redundant elastomer seals to help contain cabin air during dockings between two spacecraft. The sealing surfaces are exposed to the space environment when vehicles are not docked. In space, the seals will be exposed to temperatures between 125 to -75 C, vacuum, atomic oxygen, particle and ultraviolet radiation, and micrometeoroid and orbital debris (MMOD). Silicone rubber is the only class of space flight-qualified elastomeric seal material that functions across the expected temperature range. NASA Glenn has tested three silicone elastomers for such seal applications: two provided by Parker (S0899-50 and S0383-70) and one from Esterline (ELA-SA-401). The effects of atomic oxygen (AO), UV and electron particle radiation, and vacuum on the properties of these three elastomers were examined. Critical seal properties such as leakage, adhesion, and compression set were measured before and after simulated space exposures. The S0899-50 silicone was determined to be inadequate for extended space seal applications due to high adhesion and intolerance to UV, but both S0383-70 and ELA-SA-401 seals were adequate.

  10. Material testing of silicon carbide mirrors

    NASA Astrophysics Data System (ADS)

    Witkin, David B.; Palusinski, Iwona A.

    2009-08-01

    The Aerospace Corporation is developing a space qualification method for silicon carbide optical systems that covers material verification through system development. One of the initial efforts has been to establish testing protocols for material properties. Three different tests have been performed to determine mechanical properties of SiC: modulus of rupture, equibiaxial flexural strength and fracture toughness. Testing materials and methods have been in accordance with the respective ASTM standards. Material from four vendors has been tested to date, as part of the MISSE flight program and other programs. Data analysis has focused on the types of issues that are important when building actual components- statistical modeling of test results, understanding batch-to-batch or other source material variations, and relating mechanical properties to microstructures. Mechanical properties are needed as inputs to design trade studies and development and analysis of proof tests, and to confirm or understand the results of non-destructive evaluations of the source materials. Measuring these properties using standardized tests on a statistically valid number of samples is intended to increase confidence for purchasers of SiC spacecraft components that materials and structures will perform as intended at the highest level of reliability.

  11. Low cost silicon solar array project silicon materials task

    NASA Technical Reports Server (NTRS)

    1977-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

  12. Solar cell structure incorporating a novel single crystal silicon material

    DOEpatents

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  13. Review of the silicon material task

    SciTech Connect

    Lutwack, R.

    1984-02-01

    The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane in a Siemens-type process were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

  14. A review of the silicon material task

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1984-01-01

    The Silicon Material Task of the Flat-Plate Solar Array Project was assigned the objective of developing the technology for low-cost processes for producing polysilicon suitable for terrestrial solar-cell applications. The Task program comprised sections for process developments for semiconductor-grade and solar-cell-grade products. To provide information for deciding upon process designs, extensive investigations of the effects of impurities on material properties and the performance of cells were conducted. The silane process of the Union Carbide Corporation was carried through several stages of technical and engineering development; a pilot plant was the culmination of this effort. The work to establish silane fluidized-bed technology for a low-cost process is continuing. The advantages of the use of dichlorosilane is a siemens-type were shown by Hemlock Semiconductor Corporation. The development of other processes is described.

  15. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  16. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Yaws, C. L.; Li, K. Y.; Hopper, J. R.; Fang, C. S.; Hansen, K. C.

    1981-01-01

    Results for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells are presented. Analyses of process system properties are important for chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major physical, thermodynamic and transport property data are reported for silicon source and processing chemical materials.

  17. Silicon carbide alloys: Research reports in materials science

    SciTech Connect

    Dobson, M.M.

    1986-01-01

    The book draws from work done on other silicon materials, silicon nitrides and sialons, to emphasize the importance of the SiC system. A comprehensive treatment of non-oxide silicon ceramics, this work is of special interest to researchers involved in ceramics, materials science, and high-temperature technology. This book covers the alloys of silicon carbide with aluminum nitride. Crystallography and experimental methods including sample preparation, furnace methods, X-ray and electron diffraction, optical and electron microscopy and chemical analysis are covered.

  18. Porous silicon as a substrate material for potentiometric biosensors

    NASA Astrophysics Data System (ADS)

    Thust, Marion; Schöning, M. J.; Frohnhoff, S.; Arens-Fischer, R.; Kordos, P.; Lüth, H.

    1996-01-01

    For the first time porous silicon has been investigated for the purpose of application as a substrate material for potentiometric biosensors operating in aqueous solutions. Porous silicon was prepared from differently doped silicon substrates by a standard anodic etching process. After oxidation, penicillinase, an enzyme sensitive to penicillin, was bound to the porous structure by physical adsorption. To characterize the electrochemical properties of the so build up penicillin biosensor, capacitance - voltage (C - V) measurements were performed on these field-effect structures.

  19. Single electron transistor with P-type sidewall spacer gates.

    PubMed

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed. PMID:22121580

  20. Wetting and infiltration of graphite materials by molten silicon

    SciTech Connect

    Li, J.G.; Hausner, H.

    1995-02-01

    Wetting-assisted infiltration without the application of external pressure has advantages for the production of complex shaped metal-ceramic composites to near net shape with very low residual porosity. A class of fibrous Si/SiC composites was formed by infiltrating molten silicon into densely packed carbon fibers in preformed shapes. The liquid silicon/solid carbon system may be considered to be a model for reactive wetting and infiltration which is accompanied by the heterogeneous chemical reaction between silicon and carbon to form a solid SiC product layer at the silicon/carbon interface. The wetting behavior of various carbon materials by molten silicon has been extensively investigated recently with the sessile drop method. Some results of this investigation will be reported in the present paper. Attention will be paid to the surface roughness of the substrates on the wetting behavior. The eventual infiltration of silicon into the graphites will be discussed with relation to the wetting.

  1. Holey Silicon as an Efficient Thermoelectric Material

    SciTech Connect

    Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

    2010-09-30

    This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

  2. Silicon carbide material sintered bodies manufacturing

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method is described for producing a high density silicon carbide sintering substance which contains aluminum oxide. The sintering is done in CO gas atmosphere, which is kept at 2 to 20 atmospheric pressures.

  3. Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications

    NASA Astrophysics Data System (ADS)

    Lehmann, Volker

    2002-04-01

    Silicon has been and will most probably continue to be the dominant material in semiconductor technology. Although the defect-free silicon single crystal is one of the best understood systems in materails science, its electrochemistry to many people is still a kind of "alchemy". This view is partly due to the interdisciplinary aspects of the topic: Physics meets chemistry at the silicon-electrolyte interface. This book gives a comprehensive overview of this important aspect of silicon technology as well as examples of applications ranging from photonic crystals to biochips. It will serve materials scientists as well as engineers involved in silicon technology as a quick reference with its more than 150 technical tables and diagrams and ca. 1000 references cited for easy access of the original literature.

  4. p-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Sheng, Su; Fang, Guojia; Li, Chun; Xu, Sheng; Zhao, Xingzhong

    2006-06-01

    The recent advance of p-type transparent conductive oxide thin films is reviewed. The focus is on p-type transparent oxide semiconductors CuAlO2, CuGaO2, CuInO2, SrCu2O2, and LaCuOCh (Ch = chalcogen). These materials and related device applications are then shown as examples. Room temperature operation of current injection emission from ultraviolet light-emitting diodes based on p-SCO/n-ZnO p-n junctions has been demonstrated. This changed with the discovery of p-type transparent conducting oxides, thereby opening up the possibility for all-oxide transparent electronics.

  5. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, George C.

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  6. Method for forming fibrous silicon carbide insulating material

    DOEpatents

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  7. Electronic and material characterization of silicon-germanium and silicon-germanium-carbon epitaxial layers

    NASA Astrophysics Data System (ADS)

    Peterson, Jeffrey John

    This dissertation presents results of material and electronic characterization of strained SiGe and SiGeC epitaxial layers grown on (100) silicon using Atmospheric Pressure Chemical Vapor Deposition and Reduced Pressure Chemical Vapor Deposition. Fabrication techniques for SiGe and SiGeC are also presented. Materials characterization of epitaxial SiGe and SiGeC was done to characterize crystallinity using visual, microscopic, and Rutherford Backscattering (RBS) characterization. Surface roughness was characterized and found to correspond roughly with epitaxial crystal quality. Spectroscopic ellipsometry was used to study epitaxial layer composition and thickness, requiring development of models for nSiGe and nSiGeC versus composition (the first published for nSiGeC) and generation of ellipsometric nomograms. X-ray diffraction (XRD) measurements of epitaxial strain and relaxation showed Ge composition dominates the stress, although strain compensation due to C was observed. XRD, Raman, and Fourier Transform Infrared (FTIR) characterization were done to characterize substitutional C in SiGeC epitaxial layers, finding that C incorporation into SiGeC saturates for C contents >1%. Fabrication techniques for SiGe and SiGeC were examined. Low thermal budget processing of strained layers were investigated as well as fabrication techniques using advantageous material properties of SiGe and SiGeC. Ti/Al contacts were developed and characterized for electrical contact to SiGe and SiGeC. Schottky contacts of Pt silicide on SiGe and SiGeC was done; formation and resistivity were characterized. Four separate resistivity characterization structures have been fabricated using mesa-etch and Si etch-stop techniques. A NPN Heterojunction Bipolar transistor has been fabricated using successive mesa-etches and SiGe (or SiGeC) etch-stops. Electronic characterization of in-situ doped SiGe and SiGeC epitaxial layers was done to determine resistivity, mobility, and bandgap. Resistivities

  8. Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

    PubMed

    Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

    2015-09-21

    A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors. PMID:26331268

  9. Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators

    NASA Astrophysics Data System (ADS)

    Arab, A.; Davydov, A. V.; Papaconstantopoulos, D. A.; Li, Q.

    2016-06-01

    First-principles calculations have been performed to study the thermoelectric properties of monolayer MoS2 armchair nanoribbons (ACNRs). The electronic behavior of nanoribbons is dominated by the presence of edge states that are dependent on the number of zigzag chains across the nanoribbon. In addition, it is found that the phonon thermal conductance of monolayer MoS2 ACNRs is smaller than monolayer films due to phonon edge scattering. This effect is more pronounced in narrower nanoribbons, which leads to a higher ZT value compared to a monolayer MoS2 sheet. The effects of sulfur vacancy and edge roughness on the thermoelectric properties of MoS2 ACNRs have also been studied. We found that edge roughness decreased ZT values compared to those of perfect nanoribbons, as its impact on electrical conductance is more severe than on phonon thermal conductance. Sulfur vacancy, however, improved ZT in some subbands. It is shown that ZT values as high as 4 for electron-doped and 3 for hole-doped nanoribbons can be achieved at T = 500 K. The ability to achieve high ZT values for both p-type and n-type nanoribbons makes monolayer MoS2 ACNR a promising candidate for future solid-state thermoelectric generators.

  10. Silicon radiation detectors: materials and applications

    SciTech Connect

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented.

  11. Flat-plate solar array project. Volume 2: Silicon material

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  12. Process Feasibility Study in Support of Silicon Material Task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1979-01-01

    Analysis of process system properties was continued for silicon source materials under consideration for producing silicon. The following property data are reported for dichlorosilane which is involved in processing operations for silicon: critical constants, vapor pressure, heat of vaporization, heat capacity, density, surface tension, thermal conductivity, heat of formation and Gibb's free energy of formation. The properties are reported as a function of temperature to permit rapid engineering usage. The preliminary economic analysis of the process is described. Cost analysis results for the process (case A-two deposition reactors and six electrolysis cells) are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon. Fixed capital investment estimate for the plant is $12.47 million (1975 dollars) ($17.47 million, 1980 dollars). Product cost without profit is 8.63 $/kg of silicon (1975 dollars)(12.1 $/kg, 1980 dollars).

  13. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Wohlgemuth, J. H.; Culik, J. S.

    1982-01-01

    The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

  14. Modified silicon-germanium alloys with improved performance. [thermoelectric material

    NASA Technical Reports Server (NTRS)

    Pisharody, R. K.; Garvey, L. P.

    1978-01-01

    This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

  15. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1978-01-01

    Process system properties are analyzed for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for trichlorosilane: critical constants, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation, and Gibb's free energy of formation. Work continued on the measurement of gas viscosity values of silicon source materials. Gas phase viscosity values for silicon tetrafluoride between 40 C and 200 C were experimentally determined. Major efforts were expended on completion of the preliminary economic analysis of the silane process. Cost, sensitivity and profitability analysis results are presented based on a preliminary process design of a plant to produce 1,000 metric tons/year of silicon by the revised process.

  16. Silicon as an advanced window material for high power gyrotrons

    SciTech Connect

    Parshin, V.V.; Andreev, B.A.; Gusev, A.V.

    1995-05-01

    The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated. The dielectric data are given for the wide range of frequencies (30 -330 GHz) and temperatures (30 -330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

  17. Temperature-dependent Hall effect measurements on Cz-grown silicon pulled from compensated and recycled feedstock materials

    NASA Astrophysics Data System (ADS)

    Zhang, Song; Modanese, Chiara; Di Sabatino, Marisa; Tranell, Gabriella

    2015-11-01

    In this work, temperature-dependent Hall effect measurements in the temperature range 88-350 K were carried out to investigate the electrical properties of three solar grade p-type Czochralski (Cz) silicon ingots, pulled from recycled p-type multi-crystalline silicon top cuts and compensated solar grade (SoG) feedstock. Material bulk properties including Hall mobility, carrier density and resistivity as functions of temperature were studied to evaluate the influence of compensation and impurities. Recycled top cut replacing poly-silicon as feedstock leads to a more uniform resistivity. In addition, higher concentrations of O and C, give rise to oxygen related defects, which act as neutral scattering centers displaying only a slight influence on the electrical properties at low temperature compared to the dominant compensation effect. The electrical performances of all samples are shown to be strongly dependent on compensation level, especially at the lowest temperature (~88 K). A significant presence of incompletely ionized phosphorus was deduced through the measured carrier density. The temperature-dependent Hall effect measurements fit Klaassen's mobility model very well at low temperatures (<150 K), showing consistency with the explanation of a reduced screening effect on ionized dopants for lightly doped silicon, while the deviation at the high temperature probably may be accounted for by the presence of as-grown defects, such as oxygen related defects and phosphorus clusters, which are usually neglected in most mobility models.

  18. Current status of silicon materials research for photovoltaic applications

    SciTech Connect

    Ciszek, T.F.

    1985-04-01

    The desire for high solar cell efficiencies has been a strong factor in determining the course of recent silicon crystal growth research efforts for photovoltaics. This review, therefore, focuses on single-crystal, dislocation-free ingot growth methods (Czochralski growth, float zoning, and cold crucible growth) and on sheet growth technologies, generally multicrystalline, that have achieved moderately high (>13.5%) laboratory-scale efficiencies. These include dendritic web growth, growth from capillary dies, edge-supported pulling, ribbon-against-drop growth, and a recent technique termed crucible-free horizontal growth. Silicon ribbon crystals provide a favorable geometry and require no wafering, but they contain defects that limit solar cell performance. Growth processes, their current status, and cell efficiencies are discussed. Silicon material process steps before and after crystal growth are described, and the advantages of silicon are presented.

  19. Silicon carbide materials for high duty seal applications

    SciTech Connect

    Berroth, K.E. )

    1990-12-01

    Properties, fabrication, and high-duty applications of silicon carbide grades are discussed. The two types of silicon carbide, i.e., reaction-bonded and sintered, are considered. The potential for adhesion and the lack of dry running abilities lead to a variety of microstructures. For reaction-bonded silicon carbide, the microstructure can be a tool for optimization of the tribological behavior. Besides the high corrosion resistance of the material, its thermal conductivity is excellent. Grain sizes of about 40-50 microns are used in high-duty applications. Reaction-bonded silicon carbide with residual content of carbon graphite has improved tribological/hydrodynamic characteristics and performs well in sealing hard faces.

  20. Materials requirements for high-efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wolf, M.

    1985-01-01

    To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

  1. Process Feasibility Study in Support of Silicon Material, Task 1

    NASA Technical Reports Server (NTRS)

    Li, K. Y.; Hansen, K. C.; Yaws, C. L.

    1979-01-01

    During this reporting period, major activies were devoted to process system properties, chemical engineering and economic analyses. Analyses of process system properties was continued for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for silicon tetrafluoride: critical constants, vapor pressure, heat of varporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analysis of the BCL process was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions; process flow diagram; reaction chemistry; material and energy balances; and major process equipment design.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1982-01-01

    The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

  3. High temperature material interactions of thermoelectric systems using silicon germanium.

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1973-01-01

    The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

  4. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    NASA Technical Reports Server (NTRS)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  5. Silicone and Fluorosilicone Based Materials for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Palsule, Aniruddha S.

    The biocompatibility and the biodurability of silicones is a result of various material properties such as hydrophobicity, low surface tension, high elasticity and chemical and thermal stability. A variety of biomedical implants employ an inflatable silicone rubber balloon filled with a saline solution. Commercial examples of such a system are silicone breast implants, tissue expanders and gastric bands for obesity control. Despite the advantages, saline filled silicones systems still have a certain set of challenges that need to be addressed in order to improve the functionality of these devices and validate their use as biomaterials. The central goal of this research is to identify these concerns, design solutions and to provide a better understanding of the behavior of implantable silicones. The first problem this research focuses on is the quantification and identification of the low molecular weight silicones that are not crosslinked into the elastomeric matrix and therefore can be leached out by solvent extraction. We have developed an environmentally friendly pre-extraction technique using supercritical CO 2 and also determined the exact nature of the extractables using Gas Chromatography. We have also attempted to address the issue of an observed loss of pressure in the saline filled device during application by studying the relaxation behavior of silicone elastomer using Dynamic Mechanical Analysis and constructing long-term relaxation master curves. We have also developed a technique to develop highly hydrophobic fluorinated barrier layers for the silicone in order to prevent diffusion of water vapor across the walls of the implant. This involves a hybrid process consisting of surface modification by plasma technology followed by two different coating formulations. The first formulation employed UV curable fluorinated acrylate monomers for the coating process and the second was based on Atom Transfer Radical Polymerization (ATRP) to generate a fluorinated

  6. Porous silicon based anode material formed using metal reduction

    SciTech Connect

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  7. Coated silicon comprising material for protection against environmental corrosion

    NASA Technical Reports Server (NTRS)

    Hazel, Brian Thomas (Inventor)

    2009-01-01

    In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

  8. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1984-01-01

    Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

  9. Electrical test structures replicated in silicon-on-insulator material

    SciTech Connect

    Cresswell, M.W.; Ghoshtagore, R.N.; Allen, R.A.; Linholm, L.W.; Villarrubia, J.S.; Sniegowski, J.J.

    1996-02-27

    Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this phenomenon presents to the certification of reference materials for the calibration of linewidth-measurement instruments. Accordingly, a new test structure has been designed, fabricated, and undergone preliminary tests. Its distinguishing characteristics are assured cross-sectional profile geometries with known side-wall slopes, surface planarity, and compositional uniformity when it is formed in mono-crystalline material at selected orientations to the crystal lattice. To allow the extraction of electrical linewidth, the structure is replicated in a silicon film of uniform conductivity which is separated from the silicon substrate by a buried oxide layer. The utilization of a Silicon-On-Insulator (SKI) substrate further allows the selective removal of substrate material from local regions below the reference features, thus facilitating measurements by optical and electron-beam transmission microscopy. The combination of planar feature surfaces having known side-wall slopes is anticipated to eliminate factors which are believed to be responsible for methods divergence in linewidth measurements, a capability which is a prerequisite for reliable certification of the linewidths of features on reference materials.

  10. P-type transparent conducting oxides.

    PubMed

    Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

    2016-09-28

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed. PMID:27459942

  11. P-type transparent conducting oxides

    NASA Astrophysics Data System (ADS)

    Zhang, Kelvin H. L.; Xi, Kai; Blamire, Mark G.; Egdell, Russell G.

    2016-09-01

    Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of ‘chemical modulation of the valence band’ to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d 10 orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu+-based delafossites, layered oxychalcogenides, nd 6 spinel oxides, Cr3+-based oxides (3d 3) and post-transition metal oxides with lone pair state (ns 2). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p–n junctions will also be briefly discussed.

  12. Process research on non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1982-01-01

    High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

  13. Nanotribology of nanooxide materials in ionic liquids on silicon wafers

    NASA Astrophysics Data System (ADS)

    Hamidunsani, Ahmad Termizi; Radiman, Shahidan; Hassan, Masjuki Haji; Rahman, Irman Abdul

    2015-09-01

    Nanotribological properties have a significant impact on daily life. Ionic liquids (ILs) are becoming new favourable lubricants currently in researches. Addition of nanooxide materials in lubricants provide improvements to new technology. In this study, we determine nanotribological properties of BMIM+BF4- IL addition of different amount of ZnO nanomaterial on single crystals silicon wafer (Si110). The viscosity changes of IL samples against temperature increase were determined by rheological method. Nanotribological properties were determined by changes in friction coefficient and wear rate on silicon substrate surfaces using a reciprocating friction and wear monitor in 1 hour duration time. Aluminium cylinders acted as pins used to rub Si (110) substrate sample surfaces. Thus, on range between 0 mg to 3.5 mg of ZnO nanooxide material dispersed in 10ml BMIM+BF4- showed a good friction coefficient, wear and surface roughness reduction.

  14. Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

    2011-10-01

    The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

  15. Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467

    SciTech Connect

    Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I.

    1997-07-01

    This book was divided into the following parts: Staebler-Wronski and Fundamental Defect Studies in Amorphous Silicon; The Story of Hydrogen in Amorphous Silicon; Photoelectric Properties of Amorphous Silicon; Deposition and Properties of Microcrystalline Silicon; Deposition Studies for Amorphous Silicon and Related Materials; Solar Cells; Thin-Film Transistors; and Sensors and Novel Device Concepts. Separate abstracts were prepared for most of the papers in the volume.

  16. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  17. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  18. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  19. Proceedings of the Flat-Plate Solar Array Workshop on the Science of Silicon Material Preparation

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Several areas of silicon material preparation were addressed including silicon production and purity, thermodynamics, kinetics, mechanisms, particle formation and growth, deposition in fluidized bed reactors, and chemical vapor deposition. Twenty-two papers were presented.

  20. Nonmetallic materials handbook. Volume 2: Epoxy and silicone materials

    NASA Technical Reports Server (NTRS)

    Podlaseck, S. E.

    1982-01-01

    Chemical and physical property test data obtained during qualification and receiving inspection testing of nonmetallic materials for the Viking Mars Lander program is presented. Thermochemical data showing degradation as a function of temperature from room temperature through 773 K is included. These data include activation energies for thermal degradation, rate constants, and exo- and/or endotherms. Thermal degradations carried out under vacuum include mass spectral data taken simultaneously during the decomposition. Many materials have supporting data such as condensation rates of degassed products and isothermal weight loss. Changes in mechanical, electrical, and thermal properties after exposure to 408 K in nitrogen for times ranging from 380 to 570 hours are included for many materials.

  1. Process research of non-CZ silicon material

    NASA Astrophysics Data System (ADS)

    High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

  2. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1983-01-01

    High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

  3. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  4. Development and evaluation of die and container materials. Low cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Wills, R. R.; Niesx, D. E.

    1979-01-01

    Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions were shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Evaulation of the interaction of these materials in contact with molten silicon indicated that solid solutions based upon beta-Si3N4 were more stable than those based on Si2N2O. Sibeon was more resistant to molten silicon attack than Sialon. Both materials should preferably be used in an inert atmosphere rather than under vacuum conditions because removal of oxygen from the silicon melt occurs as SiO enhances the dissolution of aluminum and beryllium. The wetting angles of these materials were low enough for these materials to be considered as both die and container materials.

  5. Dual-beam laser thermal processing of silicon photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Simonds, Brian J.; Teal, Anthony; Zhang, Tian; Hadler, Josh; Zhou, Zibo; Varlamov, Sergey; Perez-Würfl, Ivan

    2016-03-01

    We have developed an all-laser processing technique by means of two industrially-relevant continuous-wave fiber lasers operating at 1070 nm. This approach is capable of both substrate heating with a large defocused beam and material processing with a second scanned beam, and is suitable for a variety of photovoltaic applications. We have demonstrated this technique for rapid crystallization of thin film (~10 μm) silicon on glass, which is a low cost alternative to wafer-based solar cells. We have also applied this technique to wafer silicon to control dopant diffusion at the surface region where the focused line beam rapidly melts the substrate that then regrows epitaxially. Finite element simulations have been used to model the melt depth as a function of preheat temperature and line beam power. This process is carried out in tens of seconds for an area approximately 10 cm2 using only about 1 kW of total optical power and is readily scalable. In this paper, we will discuss our results with both c-Si wafers and thin-film silicon.

  6. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOEpatents

    Brun, Milivoj Konstantin; Luthra, Krishan Lal

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  7. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  8. Silicon Nanowire Fabric as a Lithium Ion Battery Electrode Material

    SciTech Connect

    Chockla, Aaron M.; Harris, Justin T.; Akhavan, Vahid A.; Bogart, Timothy D.; Holmberg, Vincent C.; Steinhagen, Chet; Mullins, C. Buddie; Stevenson, Keith J.; Korgel, Brian A.

    2011-11-09

    A nonwoven fabric with paperlike qualities composed of silicon nanowires is reported. The nanowires, made by the supercritical-fluid–liquid–solid process, are crystalline, range in diameter from 10 to 50 nm with an average length of >100 μm, and are coated with a thin chemisorbed polyphenylsilane shell. About 90% of the nanowire fabric volume is void space. Thermal annealing of the nanowire fabric in a reducing environment converts the polyphenylsilane coating to a carbonaceous layer that significantly increases the electrical conductivity of the material. This makes the nanowire fabric useful as a self-supporting, mechanically flexible, high-energy-storage anode material in a lithium ion battery. Anode capacities of more than 800 mA h g{sup –1} were achieved without the addition of conductive carbon or binder.

  9. Process feasibility study in support of silicon material task 1

    NASA Technical Reports Server (NTRS)

    Fang, C. S.; Hansen, K. C.; Miller, J. W., Jr.; Yaws, C. L.

    1978-01-01

    Initial results for gas thermal conductivity of silicon tetrafluoride and trichlorosilane are reported in respective temperature ranges of 25 to 400 C and 50 to 400 C. For chemical engineering analyses, the preliminary process design for the original silane process of Union Carbide was completed for Cases A and B, Regular and Minimum Process Storage. Included are raw material usage, utility requirements, major process equipment lists, and production labor requirements. Because of the large differences in surge tankage between major unit operations the fixed capital investment varied from $19,094,000 to $11,138,000 for Cases A and B, respectively. For the silane process the original flowsheet was revised for a more optimum arrangement of major equipment, raw materials and operating conditions. The initial issue of the revised flowsheet (Case C) for the silane process indicated favorable cost benefits over the original scheme.

  10. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  11. Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Pellin, R.

    1983-01-01

    Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

  12. Silicon material technology status. [assessment for electronic and photovoltaic applications

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1983-01-01

    Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

  13. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  14. Novel silicone materials for LED packaging and opto-electronics devices

    NASA Astrophysics Data System (ADS)

    Vanlathem, Eric; Norris, Ann W.; Bahadur, Maneesh; DeGroot, Jon; Yoshitake, Makoto

    2006-04-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers. In LEDs, silicones can function in several roles that include optical lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their excellent transparency in the UV-visible region, their non-discoloring behavior and their stable thermo-mechanical properties. The first part of this paper/presentation will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a viable route for high throughput LED device manufacturing. For other portions of the light spectrum, specifically at telecom wavelengths, the performances of silicone based materials are also verified and this makes them attractive materials for numerous photonics device applications. The second part of this paper/presentation will describe recent demonstrations of siloxane for use as waveguides for datacom and telecom applications. A Variable Optical Attenuator (VOA) utilizing silicone based waveguides (exploiting dn/dT property) and an Optical Backplane built from silicone waveguides and out-of-plane mirrors built on glass and FR-4 substrates are discussed.

  15. Why silicon is and will remain the dominant photovoltaic material

    NASA Astrophysics Data System (ADS)

    Singh, Rajendra

    2009-07-01

    Rising demands of energy in emerging economies, coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by photovoltaic (PV) systems for green energy electricity generation. Similar to cell phones, power generated by PV systems can reach over two billion people worldwide who have no access to clean energy. Only silicon based PV devices meet the low-cost manufacturing criterion of clean energy conversion (abundance of raw material and no environmental health and safety issues). The use of larger size glass substrates and manufacturing techniques similar to the ones used by the liquid crystal display industry and the large scale manufacturing of amorphous silicon thin films based modules (~ GW per year manufacturing at a single location) can lead to installed PV system cost of $3/Wp. This will open a huge market for grid connected PV systems and related markets. With further research and development, this approach can provide $2/Wp installed PV system costs in the next few years. At this cost level, PV electricity generation is competitive with any other technology, and PV power generation can be a dominant electricity generation technology in the 21st century.

  16. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    SciTech Connect

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.; CERN RD-48 ROSE Collaboration

    1997-12-01

    Epitaxial grown thick layers ({ge} 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 {times} 10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5 {times} 10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ``sinking`` process, however, becomes non-effective at high radiation fluences (10{sup 14} cm{sup {minus}2}) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 {times} 10{sup 14} cm{sup {minus}2} the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 {times} 10{sup 12} cm{sup {minus}3} after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon.

  17. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    SciTech Connect

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.

    1997-11-01

    Epitaxial grown thick layers (>100 {mu}m) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2{center_dot}10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5{center_dot}10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects, in epitaxial layers. The {open_quotes}sinking{close_quotes} process, however, becomes non-effective at high radiation fluences (10{sup 14} cm{sup {minus}2}) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1{center_dot}10{sup 14}cm{sup {minus}2} the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3{center_dot}10{sup 12} cm{sup {minus}3} after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon.

  18. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  19. Simultaneous Formation of Ni/Al Ohmic Contacts to Both n- and p-Type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ito, Kazuhiro; Onishi, Toshitake; Takeda, Hidehisa; Kohama, Kazuyuki; Tsukimoto, Susumu; Konno, Mitsuru; Suzuki, Yuya; Murakami, Masanori

    2008-11-01

    The fabrication procedure for silicon carbide power metal oxide semiconductor field-effect transistors can be improved through simultaneous formation (i.e., using the same contact materials and a one-step annealing process) of ohmic contacts on both the n-source and p-well regions. We have succeeded in the simultaneous formation of Ni/Al ohmic contacts to n- and p-type SiC after annealing at 1000°C for 5 min in an ultrahigh vacuum. Ohmic contacts to n-type SiC were found when the Al-layer thickness was less than about 6 nm, while ohmic contacts to p-type SiC were observed for an Al-layer thickness greater than about 5 nm. Only the contacts with an Al-layer thickness in the range of 5 nm to 6 nm exhibited ohmic behavior to both n- and p-type SiC, with a specific contact resistance of 1.8 × 10-4 Ω cm2 and 1.2 × 10-2 Ω cm2 for n- and p-type SiC, respectively. An about 100-nm-thick contact layer was uniformly formed on the SiC substrate, and polycrystalline δ-Ni2Si(Al) grains were formed at the contact/SiC interface. In the samples that exhibited ohmic behavior to both n- and p-type SiC, the distribution of the Al/Ni ratios in the δ-Ni2Si(Al) grains was larger than that observed for any of the samples that showed ohmic behavior to either n- or p-type SiC. Furthermore, the grain size of the δ-Ni2Si(Al) grains in the samples showing ohmic behavior to both n- and p-type SiC was smaller than the grains in any of the samples that showed ohmic behavior to either n- or p-type SiC. Thus, the large distribution in the Al/Ni ratios and a fine microstructure were found to be characteristic of the ohmic contacts to both n- and p-type SiC. Grains with a low Al concentration correspond to ohmic contacts to n-type SiC, while grains with a high Al concentration correspond to ohmic contacts to p-type SiC.

  20. Silicon materials outlook study for 1980-1985 calendar years

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Ferber, R.; Hasbach, W.; Pellin, R.; Yaws, C.

    1979-01-01

    The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

  1. Atomistic simulations of material damping in amorphous silicon nanoresonators

    NASA Astrophysics Data System (ADS)

    Mukherjee, Sankha; Song, Jun; Vengallatore, Srikar

    2016-06-01

    Atomistic simulations using molecular dynamics (MD) are emerging as a valuable tool for exploring dissipation and material damping in nanomechanical resonators. In this study, we used isothermal MD to simulate the dynamics of the longitudinal-mode oscillations of an amorphous silicon nanoresonator as a function of frequency (2 GHz–50 GHz) and temperature (15 K–300 K). Damping was characterized by computing the loss tangent with an estimated uncertainty of 7%. The dissipation spectrum displays a sharp peak at 50 K and a broad peak at around 160 K. Damping is a weak function of frequency at room temperature, and the loss tangent has a remarkably high value of ~0.01. In contrast, at low temperatures (15 K), the loss tangent increases monotonically from 4× {{10}-4} to 4× {{10}-3} as the frequency increases from 2 GHz to 50 GHz. The mechanisms of dissipation are discussed.

  2. Compatibility of RPECVD silicon dioxide with depletion gate materials for silicon-based nanostructures

    NASA Astrophysics Data System (ADS)

    Rack, Mary Jo

    The focus of this work has been upon deposited oxide and gate materials suitable for use in silicon-based nanostructures. The latter use e-beam patterned depletion gates in order to create three-dimensional confinement of electrons in the 2-dimensional electron gas of a metal-oxide-semiconductor field effect transistor (MOSFET) inversion layer. Remote Plasma Enhanced chemical Vapor Deposition (RPECVD) silicon dioxide was selected as the deposited oxide. The deposition process was optimized using statistical techniques. Typically, low temperature deposited oxide is annealed in order to achieve device quality. The behavior of the oxide as a function of deposition and annealing temperature was characterized in order to understand the advantages of the anneal and the thermal budget required to accomplish the objectives of the MOSFET gate oxide quality oxide. Bulk oxide was assessed using etch rates in HF containing solutions, infrared absorption data, refractive index, and AFM measurements of surface roughness. The interface quality was examined using C-V measurements. Breakdown measurements were performed. The impact of the oxide deposition process on a thermally established Si/SiOsb2 interface was explored. Three materials were investigated for the role of depletion gates that might tolerate a high temperature aneal: cobalt silicide, cobalt and chrome. Their thermal stability was tested, sandwiched between a thermal oxide and a deposited oxide, for annealing temperatures of 700, 800 and 900 C by Auger electron spectroscopy and cross-sectional transmission electron spectroscopy. The impact of the oxide deposition process on the depletion gates was significant and so this has been studied as well.

  3. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    NASA Technical Reports Server (NTRS)

    Beaty, John S.; Rolfe, Jonathon L.; Vandersande, Jan; Fleurial, Jean-Pierre

    1992-01-01

    Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

  4. Ultraviolet Nano Imprint Lithography Using Fluorinated Silicon-Based Resist Materials

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi

    2010-02-01

    Fluorinated silicon-based resist materials have recently been applied as ultraviolet crosslinkable materials for nano imprint lithography. I report and demonstrate the step and flash nano imprint lithography process using the newly fluorinated silicon-based resist materials for next generation technologies. This paper presents progress in the formulation of advanced resist materials design, the development of suitable ultraviolet imprint conditions and etch processes to achieve thin residual resist layers, low volumetric shrinkage of the resist film, and low imprint pressures for defect reduction. High quality imprint images were produced with multiple pattern-structured templates on wafers using these developed fluorinated silicon-based resist materials.

  5. Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Chusovitin, E. A.; Galkin, K. N.; Goroshko, D. L.; Shamirsaev, T. S.

    2011-11-01

    Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystals (NCs) of iron and chromium disilicides and polycrystalline nanocomposites with buried Mg2Si NCs (3-40 nm) on the base of reactive deposition epitaxy (RDE), solid phase epitaxy(SPE) and molecular beam epitaxy (MBE), which demonstrated wonderful thermoelectrical properties and the possibility of strong light emission with wavelength of 1.2 - 1.6 microns in the mesa-diode structures with p-n junction at direct and back bias. Doping process of Mg2Si nanocrystals inside nanocomposite layers was developed on the base of ordered surface phases of metals on a silicon substrate. Nanocomposite layers with n- and p-type conductivity have been successfully grown. The huge increase of Zeebeck coefficient in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si nanocomposites has been found.

  6. Approach to a creation of silicon-silicide smart materials for silicon-based thermoelectronics and photonics

    NASA Astrophysics Data System (ADS)

    Galkin, N. G.; Chusovitin, E. A.; Galkin, K. N.; Goroshko, D. L.; Shamirsaev, T. S.

    2012-04-01

    Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystals (NCs) of iron and chromium disilicides and polycrystalline nanocomposites with buried Mg2Si NCs (3-40 nm) on the base of reactive deposition epitaxy (RDE), solid phase epitaxy(SPE) and molecular beam epitaxy (MBE), which demonstrated wonderful thermoelectrical properties and the possibility of strong light emission with wavelength of 1.2 - 1.6 microns in the mesa-diode structures with p-n junction at direct and back bias. Doping process of Mg2Si nanocrystals inside nanocomposite layers was developed on the base of ordered surface phases of metals on a silicon substrate. Nanocomposite layers with n- and p-type conductivity have been successfully grown. The huge increase of Zeebeck coefficient in the Si-p/β-FeSi2 NCs/Si-p and Si/Mg2Si NCs/Si nanocomposites has been found.

  7. [Adhesion of dental silicone rubber material to thermoplastic material for mouthguards].

    PubMed

    Yokota, Kayoko

    2010-03-01

    A preliminary study revealed that an autopolymerization addition silicone resilient denture relining material (SI) had excellent shock absorption properties similar to those of thermoplastic materials commonly used for mouthguards (ethylene-vinyl acetate: EVA). The aim of the present study was to examine the bonding strength of SI and EVA using a newly-developed adhesive prototype. Delamination tests and tensile strength tests were performed to compare the bonding strengths of SI on EVA prepared under the following four conditions: 1) Control condition (no preparation; C), 2) Sandblasting (S), 3) Bonding with the adhesive prototype (M), and 4) Combination of sandblasting preparation and bonding with the adhesive prototype (SM). The mean bonding strength (S. D.) of the delamination tests under the C, S, M and SM conditions were 0.167 (0.003) N/mm, 0.273 (0.034) N/mm, 0.242 (0.027) N/mm and 0.506 (0.113) N/mm, respectively. The mean bonding strength (S. D.) of the tensile strength tests under the C, S, M and SM conditions were 0.006 (0.011) MPa, 0.081 (0.105) MPa, 0.231 (0.069) MPa and 0.590 (0.041) MPa, respectively. Two-way analysis of variances and Tukey's HSD test detected that the combination of sandblasting preparation and bonding with the adhesive prototype significantly improved the bonding strength between SI and EVA. The results indicate that the self-curing addition silicone resilient denture relining material may adhere to the thermoplastic material prepared by combined application of sandblasting and the adhesive prototype, suggesting the potential of the dental silicone rubber material as a material for repairing mouthguards in clinical practice. PMID:20415249

  8. Low cost solar array project 1: Silicon material

    NASA Technical Reports Server (NTRS)

    Jewett, D. N.; Bates, H. E.; Hill, D. M.

    1980-01-01

    The low cost production of silicon by deposition of silicon from a hydrogen/chlorosilane mixture is described. Reactor design, reaction vessel support systems (physical support, power control and heaters, and temperature monitoring systems) and operation of the system are reviewed. Testing of four silicon deposition reactors is described, and test data and consequently derived data are given. An 18% conversion of trichlorosilane to silicon was achieved, but average conversion rates were lower than predicted due to incomplete removal of byproduct gases for recycling and silicon oxide/silicon polymer plugging of the gas outlet. Increasing the number of baffles inside the reaction vessel improved the conversion rate. Plans for further design and process improvements to correct the problems encountered are outlined.

  9. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    PubMed

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-01

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers. PMID:26281016

  10. composite and p-type Si

    NASA Astrophysics Data System (ADS)

    Lin, Yow-Jon; Yang, Shih-Hung

    2014-07-01

    The present work reports the fabrication and detailed electrical properties of heterojunction diodes based on p-type Si and the reduced graphene oxide-based TiO2 (TiO2:RGO) composite. The enhanced dark conductivity was observed for TiO2:RGO composite films. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The TiO2/p-type Si diode shows a poor rectifying behavior and low photoresponse. This is because of the dominance of electron traps in TiO2. However, the TiO2:RGO/p-type Si diode shows a good rectifying behavior and high photoresponse, which is attributed to high-mobility electron transport combined with the reduced number of electron traps.

  11. Silicon nitride used as a rolling-element bearing material

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1975-01-01

    Rolling-element fatigue tests were conducted with hot-pressed silicon nitride to determine its ability to withstand concentrated contacts in rolling-element bearings. If hot-pressed silicon nitride is used for both balls and races, attention must be paid to fitting both shaft and bearing housing.

  12. Compatibility Studies of Various Refractory Materials in Contact with Molten Silicon

    NASA Technical Reports Server (NTRS)

    Odonnell, T.; Leipold, M. H.; Hagan, M.

    1978-01-01

    The production of low cost, efficient solar cells for terrestrial electric power generation involves the manipulation of molten silicon with a present need for noncontaminating, high temperature refractories to be used as containment vessels, ribbon-production dies, and dip-coated substrates. Studies were conducted on the wetting behavior and chemical/physical interactions between molten silicon and various refractory materials.

  13. Silicon materials task of the low cost solar array project, part 2

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Rai-Choudhury, P.; Blais, P. D.; Mccormick, J. R.

    1976-01-01

    Purity requirements for solar cell grade silicon material was developed and defined by evaluating the effects of specific impurities and impurity levels on the performance of silicon solar cells. Also, data was generated forming the basis for cost-tradeoff analyses of silicon solar cell material. Growth, evaluation, solar cell fabrication and testing was completed for the baseline boron-doped Czochralski material. Measurements indicate Cn and Mn seriously degrade cell performance, while neither Ni nor Cu produce any serious reduction in cell efficiency.

  14. High-temperature corrosion of material based on silicon nitride and exposed to salts

    SciTech Connect

    Gogotski, Y.G.; Frantsevich, I.N.; Lavrenko, V.A.

    1985-05-01

    Materials based on silicon nitride or carbide have shown promise for use in manufacturing gas-turbine and diesel engine parts. This paper presents an investigation of the corrosion of a reaction-sintered material based on silicon nitride with the addition of 30% silicon carbide and 2% magnesium oxide, when exposed to melts of sodium chloride, sodium sulfide, or sea salt. The studies show that the material corrodes very little in sea salt or sodium chloride melts, but it is destroyed rapidly in a sodium sulfate melt.

  15. Studies on Thermal and Mechanical Properties of Epoxy-Silicon Oxide Hybrid Materials

    NASA Astrophysics Data System (ADS)

    Ghosh, P. K.; Kumar, Kaushal; Kumar, Arun

    2015-11-01

    Ultrasonic dual mixing (UDM) process involving ultrasonic vibration with simultaneous stirring is used to prepare epoxy-silicon oxide hybrid materials with inorganic nanoscale building blocks by incorporating nanoscale silicon oxide network in epoxy matrix. The silicon oxide network is obtained from tetraethoxysilane (TEOS) by using the in situ sol-gel process. Same epoxy-silica hybrid materials were also prepared by mixing with simple impeller stirring, and its properties were compared with the material of same composition prepared by the UDM process. The epoxy-silicon oxide hybrid materials are characterized by using FT-IR, DSC, FESEM, and XRD techniques. The glass transition temperature, tensile strength, and elastic modulus of the epoxy-silicon oxide hybrid materials treated by UDM process are found comparatively better than those of the materials processed by a rotating impeller. FESEM studies confirm that amount of TEOS varies the distribution and size of silicon oxide network, which remains relatively finer at lower content of TEOS. Significant improvement of thermal and mechanical properties of the neat epoxy is noted in the presence of 3.05 wt.% TEOS content in it is giving rise to the formation of inorganic building block of silicon oxide of size 88 ± 45 nm in the matrix. In this regard, the use of UDM process is found superior to mixing by simple impeller stirring for enhancement of properties of epoxy-silicon oxide hybrid materials. Lowering of properties of the epoxy-silicon oxide hybrid materials with TEOS addition beyond 3.05 wt.% up to 6.1 wt.% occurs primarily due to increase of amount and size (up to 170 ± 82 nm) of the inorganic building block in the matrix.

  16. Temperature-Dependent Young's modulus, shear modulus and Poisson's ratio of p-type Ce0.9Fe3.5Co0.5Sb12 and n-type Co0.95Pd0.05Te0.05Sb3 Skutterudite Thermoelectric Materials

    SciTech Connect

    Schmidt, Robert; Case, Eldon D; Ni, Jennifer E.; Trejo, Rosa M; Lara-Curzio, Edgar

    2012-01-01

    Effective models of the mechanical behavior of thermoelectric materials under device conditions require knowledge of the temperature-dependent elastic properties.Between room temperature and 600 K, Resonant Ultrasound Spectroscopy (RUS) measurements of the Young s and shear moduli of three skutterudite thermoelectric materials, n-type Co0.95Pd0.05Te0.05Sb3(both with and without 0.1 atomic % cerium dopant) and p-type Ce0.9Fe3.5Co0.5Sb12, decreased linearly with temperature at a rate between -0.011 GPa/K and -0.013 GPa/K. In contrast the Poisson s ratio was approximately 0.22 for the three materials and was relatively insensitive to temperature.For temperatures > 600 K, the elastic moduli decreased more rapidly and resonance peaks broadened indicating the onset of viscoelastic behavior.The viscoelastic relaxation of the moduli was least for Ce-doped n-type material, for which grain boundary precipitates may inhibit grain boundary sliding which in turn has important implications concerning creep resistance. In addition, powder processing of the n- and p-type materials should be done cautiously since submicron-sized powders of both the n- and p-type powders were pyrophoric

  17. Silicon materials task of the low cost solar array project, phase 2

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R., Jr.; Blais, P. D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M. H.; Mccormick, J. R.

    1977-01-01

    The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

  18. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  19. Silicon material task. Part 3: Low-cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Roques, R. A.; Coldwell, D. M.

    1977-01-01

    The feasibility of a process for carbon reduction of low impurity silica in a plasma heat source was investigated to produce low-cost solar-grade silicon. Theoretical aspects of the reaction chemistry were studied with the aid of a computer program using iterative free energy minimization. These calculations indicate a threshold temperature exists at 2400 K below which no silicon is formed. The computer simulation technique of molecular dynamics was used to study the quenching of product species.

  20. Reaction-Based SiC Materials for Joining Silicon Carbide Composites for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Singh, M.; Serizawa, H.; Katoh, Y.; Kohyama, A.

    2000-09-01

    The fabrication of large or complex silicon carbide-fiber-reinforced silicon carbide (SiC/SiC) components for fusion energy systems requires a method to assemble smaller components that are limited in size by manufacturing constraints. Previous analysis indicates that silicon carbide should be considered as candidate joint materials. Two methods to obtain SiC joints rely on a reaction between silicon and carbon to produce silicon carbide. This report summarizes preliminary mechanical properties of joints formed by these two methods. The methods appear to provide similar mechanical properties. Both the test methods and materials are preliminary in design and require further optimization. In an effort to determine how the mechanical test data is influenced by the test methodology and specimen size, plans for detailed finite element modeling (FEM) are presented.

  1. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    NASA Technical Reports Server (NTRS)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  2. Thermally conductive metal wool-silicone rubber material can be used as shock and vibration damper

    NASA Technical Reports Server (NTRS)

    Hough, W. W.

    1964-01-01

    Bronze wool pads, impregnated with silicon rubber, meet the requirement for a thermally conductive, shock and vibration absorbing material. They serve as spacers in equipment mounting and are resistant to high temperatures.

  3. Effect of Heat Treatment on Silicon Carbide Based Joining Materials for Fusion Energy

    SciTech Connect

    Lewinsohn, Charles A.; Jones, Russell H.; Nozawa, T.; Kotani, M.; Kishimoto, H.; Katoh, Y.; Kohyama, A.

    2001-10-01

    Two general approaches to obtaining silicon carbide-based joint materials were used. The first method relies on reactions between silicon and carbon to form silicon carbide, or to bond silicon carbide powders together. The second method consists of pyrolysing a polycarbosilane polymer to yield an amorphous, covalently bonded material. In order to assess the long-term durability of the joint materials, various heat treatments were performed and the effects on the mechanical properties of the joints were measured. Although the joints derived from the polycarbosilane polymer were not the strongest, the value of strength measured was not affected by heat treatment. On the other hand, the value of the strength of the reaction-based joints was affected by heat treatment, indicating the presence of residual stresses or unreacted material subsequent to processing. Further investigation of reaction-based joining should consist of detailed microscopic studies; however, continued study of joints derived from polymers is also warranted.

  4. Microscopic Image of Martian Surface Material on a Silicone Substrate

    NASA Technical Reports Server (NTRS)

    2008-01-01

    [figure removed for brevity, see original site] Click on image for larger version of Figure 1

    This image taken by the Optical Microscope on NASA's Phoenix Mars Lander shows soil sprinkled from the lander's Robot Arm scoop onto a silicone substrate. The substrate was then rotated in front of the microscope. This is the first sample collected and delivered for instrumental analysis onboard a planetary lander since NASA's Viking Mars missions of the 1970s. It is also the highest resolution image yet seen of Martian soil.

    The image is dominated by fine particles close to the resolution of the microscope. These particles have formed clumps, which may be a smaller scale version of what has been observed by Phoenix during digging of the surface material.

    The microscope took this image during Phoenix's Sol 17 (June 11), or the 17th Martian day after landing. The scale bar is 1 millimeter (0.04 inch).

    Zooming in on the Martian Soil

    In figure 1, three zoomed-in portions are shown with an image of Martian soil particles taken by the Optical Microscope on NASA's Phoenix Mars Lander.

    The left zoom box shows a composite particle. The top of the particle has a green tinge, possibly indicating olivine. The bottom of the particle has been reimaged at a different focus position in black and white (middle zoom box), showing that this is a clump of finer particles.

    The right zoom box shows a rounded, glassy particle, similar to those which have also been seen in an earlier sample of airfall dust collected on a surface exposed during landing.

    The shadows at the bottom of image are of the beams of the Atomic Force Microscope.

    The Phoenix Mission is led by the University of Arizona, Tucson, on behalf of NASA. Project management of the mission is by NASA's Jet Propulsion Laboratory, Pasadena, Calif. Spacecraft development is by Lockheed Martin Space Systems, Denver.

  5. Slicing of Silicon into Sheet Material. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

    NASA Technical Reports Server (NTRS)

    Fleming, J. R.; Holden, S. C.; Wolfson, R. G.

    1979-01-01

    The use of multiblade slurry sawing to produce silicon wafers from ingots was investigated. The commercially available state of the art process was improved by 20% in terms of area of silicon wafers produced from an ingot. The process was improved 34% on an experimental basis. Economic analyses presented show that further improvements are necessary to approach the desired wafer costs, mostly reduction in expendable materials costs. Tests which indicate that such reduction is possible are included, although demonstration of such reduction was not completed. A new, large capacity saw was designed and tested. Performance comparable with current equipment (in terms of number of wafers/cm) was demonstrated.

  6. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    SciTech Connect

    Benavides, Pahola T.; Dai, Qiang; Sullivan, John L.; Kelly, Jarod C.; Dunn, Jennifer B.

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  7. Computational Classification of P-Type ATPases.

    PubMed

    Søndergaard, Dan; Knudsen, Michael; Pedersen, Christian Nørgaard Storm

    2016-01-01

    Analysis of sequence data is inevitable in modern molecular biology, and important information about for example proteins can be inferred efficiently using computational methods. Here, we explain how to use the information in freely available databases together with computational methods for classification and motif detection to assess whether a protein sequence corresponds to a P-type ATPase (and if so, which subtype) or not. PMID:26695056

  8. Materials characterization and fracture mechanics of a space grade dielectric silicone insulation

    NASA Technical Reports Server (NTRS)

    Abdel-Latif, A. I.; Tweedie, A. T.

    1982-01-01

    The present investigation is concerned with the DC 93-500 high voltage silicone insulation material employed to pot the gun and the collector end of a traveling wave tube (TWT) used on the Landsat D Satellite. The fracture mechanics behavior of the silicone resin was evaluated by measuring the slow crack velocity as a function of the opening mode of the stress intensity factor at +25 and -10 C, taking into account various uniaxial discrete strain values. It was found that the silicone resins slow crack growth is faster than that for a high voltage insulation polyurethane material at the same stress intensity factor value and room temperature.

  9. Prize for Industrial Applications of Physics: Materials science, microelectronics scaling, and beyond the silicon transistor

    NASA Astrophysics Data System (ADS)

    Guha, Supratik

    2015-03-01

    Conventional density and performance scaling of the silicon microprocessor will reach an end within about a decade. In anticipation of this, there has been extensive interest in examining materials and devices that will replace silicon transistors. There is also the more far reaching interest in going beyond conventional computing and exploring non-Boolean forms of logic, and the devices and materials that will go with it. I will describe some of the research at IBM in these areas, including our work in developing carbon nanotube transistors as a drop in replacement for the silicon MOSFET.

  10. Evolution of Plant P-Type ATPases

    PubMed Central

    Pedersen, Christian N. S.; Axelsen, Kristian B.; Harper, Jeffrey F.; Palmgren, Michael G.

    2012-01-01

    Five organisms having completely sequenced genomes and belonging to all major branches of green plants (Viridiplantae) were analyzed with respect to their content of P-type ATPases encoding genes. These were the chlorophytes Ostreococcus tauri and Chlamydomonas reinhardtii, and the streptophytes Physcomitrella patens (a non-vascular moss), Selaginella moellendorffii (a primitive vascular plant), and Arabidopsis thaliana (a model flowering plant). Each organism contained sequences for all five subfamilies of P-type ATPases. Whereas Na+ and H+ pumps seem to mutually exclude each other in flowering plants and animals, they co-exist in chlorophytes, which show representatives for two kinds of Na+ pumps (P2C and P2D ATPases) as well as a primitive H+-ATPase. Both Na+ and H+ pumps also co-exist in the moss P. patens, which has a P2D Na+-ATPase. In contrast to the primitive H+-ATPases in chlorophytes and P. patens, the H+-ATPases from vascular plants all have a large C-terminal regulatory domain as well as a conserved Arg in transmembrane segment 5 that is predicted to function as part of a backflow protection mechanism. Together these features are predicted to enable H+ pumps in vascular plants to create large electrochemical gradients that can be modulated in response to diverse physiological cues. The complete inventory of P-type ATPases in the major branches of Viridiplantae is an important starting point for elucidating the evolution in plants of these important pumps. PMID:22629273

  11. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

    DOEpatents

    Habermehl, Scott D.; Sniegowski, Jeffry J.

    2001-01-01

    The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

  12. Europium Silicide – a Prospective Material for Contacts with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  13. Europium Silicide – a Prospective Material for Contacts with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

    2016-05-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

  14. LSA silicon material task closed-cycle process development

    NASA Technical Reports Server (NTRS)

    Roques, R. A.; Wakefield, G. F.; Blocher, J. M., Jr.; Browning, M. F.; Wilson, W.

    1979-01-01

    The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

  15. Europium Silicide - a Prospective Material for Contacts with Silicon.

    PubMed

    Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

    2016-01-01

    Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

  16. Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

    NASA Technical Reports Server (NTRS)

    Singh, M.; Leonhardt, T. A.

    1995-01-01

    Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

  17. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    NASA Astrophysics Data System (ADS)

    Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  18. Isotropic behavior of an anisotropic material: single crystal silicon

    NASA Astrophysics Data System (ADS)

    McCarter, Douglas R.; Paquin, Roger A.

    2013-09-01

    Zero defect single crystal silicon (Single-Crystal Si), with its diamond cubic crystal structure, is completely isotropic in most properties important for advanced aerospace systems. This paper will identify behavior of the three most dominant planes of the Single-Crystal Si cube (110), (100) and (111). For example, thermal and optical properties are completely isotropic for any given plane. The elastic and mechanical properties however are direction dependent. But we show through finite element analysis that in spite of this, near-isotropic behavior can be achieved with component designs that utilize the optimum elastic modulus in directions with the highest loads. Using glass frit bonding to assemble these planes is the only bonding agent that doesn't degrade the performance of Single-Crystal Si. The most significant anisotropic property of Single-Crystal Si is the Young's modulus of elasticity. Literature values vary substantially around a value of 145 GPa. The truth is that while the maximum modulus is 185 GPa, the most useful <110< crystallographic direction has a high 169 GPa, still higher than that of many materials such as aluminum and invar. And since Poisson's ratio in this direction is an extremely low 0.064, distortion in the plane normal to the load is insignificant. While the minimum modulus is 130 GPa, a calculated average value is close to the optimum at approximately 160 GPa. The minimum modulus is therefore almost irrelevant. The (111) plane, referred to as the natural cleave plane survives impact that would overload the (110) and/or (100) plane due to its superior density. While mechanical properties vary from plane to plane each plane is uniform and response is predictable. Understanding the Single-Crystal Si diamond cube provides a design and manufacture path for building lightweight Single-Crystal Si systems with near-isotropic response to loads. It is clear then that near-isotropic elastic behavior is achievable in Single-Crystal Si

  19. Thermoelectric properties of gallium-doped p-type germanium

    NASA Astrophysics Data System (ADS)

    Ohishi, Yuji; Takarada, Sho; Aikebaier, Yusufu; Muta, Hiroaki; Kurosaki, Ken; Yamanaka, Shinsuke; Miyazaki, Yoshinobu; Uchida, Noriyuki; Tada, Tetsuya

    2016-05-01

    In this study, the temperature-dependent thermoelectric properties of p-type single-crystal Ge, which is a useful material for thermoelectric applications owing to its significantly high carrier mobility, were investigated. The thermoelectric properties of Ga-doped (5.7 × 1016, 3.4 × 1018, and 1.0 × 1019 cm-3) p-type single-crystal Ge were measured from room temperature to 770 K. The sample with a carrier concentration of 1.0 × 1019 cm-3 showed the highest thermoelectric figure of merit, ZT, over the entire measured temperature range. The maximum ZT value was 0.06 at 650 K. A theoretical model based on the Boltzmann transport equation with relaxation-time approximation was developed and quantitatively reproduced the experimentally observed data. The optimal impurity concentration predicted by this model was 3 × 1019 cm-3 at 300 K and increased with temperature.

  20. Diffusion of hydrogen in perfect, p -type doped, and radiation-damaged 4H-SiC

    NASA Astrophysics Data System (ADS)

    Aradi, B.; Deák, P.; Gali, A.; Son, N. T.; Janzén, E.

    2004-06-01

    The diffusion of interstitial atomic hydrogen in 4H-SiC was investigated theoretically, using the local density approximation of density functional theory. We have found that the diffusion barrier in the perfect crystal is ⩽0.6 eV . Comparing this value with the calculated zero point vibration energy of interstitial hydrogen indicates that hydrogen diffuses very rapidly in perfect portions of the SiC lattice, until it gets trapped. In p -doped (B, Al) material the dissociation of the hydrogen-acceptor complexes is the limiting step in diffusion, with a calculated dissociation energy of 2.5 and 1.6 eV for B+H and Al+H , respectively. In irradiated material the trapping and detrapping of hydrogen by silicon vacancies determines the effective diffusion barrier, which lies between 4.0 and 5.3 eV depending on the Fermi level in p -type and weakly n -type material.

  1. Enhanced cell adhesion to silicone implant material through plasma surface modification.

    PubMed

    Hauser, J; Zietlow, J; Köller, M; Esenwein, S A; Halfmann, H; Awakowicz, P; Steinau, H U

    2009-12-01

    Silicone implant material is widely used in the field of plastic surgery. Despite its benefits the lack of biocompatibility this material still represents a major problem. Due to the surface characteristics of silicone, protein adsorption and cell adhesion on this polymeric material is rather low. The aim of this study was to create a stable collagen I surface coating on silicone implants via glow-discharge plasma treatment in order to enhance cell affinity and biocompatibility of the material. Non-plasma treated, collagen coated and conventional silicone samples (non-plasma treated, non-coated) served as controls. After plasma treatment the change of surface free energy was evaluated by drop-shape analysis. The quality of the collagen coating was analysed by electron microscopy and Time-Of-Flight Secondary Ion Mass Spectrometry. For biocompatibility tests mouse fibroblasts 3T3 were cultivated on the different silicone surfaces and stained with calcein-AM and propidium iodine to evaluate cell viability and adherence. Analysis of the different surfaces revealed a significant increase in surface free energy after plasma pre-treatment. As a consequence, collagen coating could only be achieved on the plasma activated silicone samples. The in vitro tests showed that the collagen coating led to a significant increase in cell adhesion and cell viability. PMID:19641852

  2. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    PubMed Central

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  3. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

    NASA Astrophysics Data System (ADS)

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-06-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.

  4. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

    PubMed

    Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Qamar, Afzaal; Namazu, Takahiro; Dimitrijev, Sima; Nguyen, Nam-Trung; Dao, Dzung Viet

    2016-01-01

    Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors. PMID:27349378

  5. Purity of (28)Si-Enriched Silicon Material Used for the Determination of the Avogadro Constant.

    PubMed

    D'Agostino, Giancarlo; Di Luzio, Marco; Mana, Giovanni; Oddone, Massimo; Bennett, John W; Stopic, Attila

    2016-07-01

    At present, counting atoms in a one-kilogram sphere made of (28)Si-enriched silicon allows the determination of the Avogadro constant with the 2.0 × 10(-8) relative standard uncertainty required for the realization of the definition of the new kilogram. With the exception of carbon, oxygen, boron, nitrogen, and hydrogen, the claimed uncertainty is based on the postulation that the silicon material used to manufacture the sphere was above a particular level of purity. Two samples of the silicon were measured using instrumental neutron activation analysis to collect experimental data to test the purity assumption. The results obtained in two experiments carried out using different research reactor neutron sources are reported. The analysis confirmed that the silicon material was of sufficient purity by quantifying the ultratrace concentration of 12 elements and determining the detection limits of another 54 elements. PMID:27282500

  6. A New Approach to Joining of Silicon Carbide-Based Materials for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Singh, Mrityunjay

    1998-01-01

    Ceramic joining is recognized as one of the enabling technologies for the application of silicon carbide-based materials in a number of high temperature applications. An affordable, robust technique for the joining of silicon carbide-based ceramics has been developed. This technique is capable of producing joints with tailorable thickness and composition. Microstructure and mechanical properties of reaction formed joints in a reaction bonded silicon carbide have been reported. These joints maintain their mechanical strengths at high temperatures (up to 1350 C) in air. This technique is capable of joining large and complex shaped ceramic components.

  7. Sol-gel preparation of low oxygen content, high surface area silicon nitride and imidonitride materials.

    PubMed

    Sardar, Kripasindhu; Bounds, Richard; Carravetta, Marina; Cutts, Geoffrey; Hargreaves, Justin S J; Hector, Andrew L; Hriljac, Joseph A; Levason, William; Wilson, Felix

    2016-04-01

    Reactions of Si(NHMe)4 with ammonia are effectively catalysed by small ammonium triflate concentrations, and can be used to produce free-standing silicon imide gels. Firing at various temperatures produces amorphous or partially crystallised silicon imidonitride/nitride samples with high surface areas and low oxygen contents. The crystalline phase is entirely α-Si3N4 and structural similarities are observed between the amorphous and crystallised materials. PMID:26931152

  8. Assessment of the advanced clay bonded silicon carbide candle filter materials. Topical report, September 1995

    SciTech Connect

    Alvin, M.A.

    1995-07-01

    Advancements have been made during the past five years to not only increase the strength of the as-manufactured clay bonded silicon carbide candle filter materials, but also to improve their high temperature creep resistance properties. This report reviews these developments, and describes the results of preliminary qualification testing which has been conducted at Westinghouse prior to utilizing the advanced clay bonded silicon carbide filters in high temperature, pressurized, coal-fired combustion and/or gasification applications.

  9. Ligand Doping on the Hybrid Thermoelectric Materials Based on Terthiophene-Capped Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Ashby, Shane P.; Bian, Tiezheng; Guélou, Gabin; Powell, Anthony V.; Chao, Yimin

    2016-03-01

    Over the past 2 years, silicon nanoparticles (SiNPs) functionalised with conjugated molecules have been shown to have potential as low-temperature thermoelectric materials. One key challenge with such materials relates to the introduction of charge carriers. There are two components of organic/silicon nanocomposite materials in which charge carriers can be introduced: the silicon nanoparticle or the organic ligand. Investigation into the effect of introducing charge carriers on the ligands via oxidation is another step towards understanding and optimising this kind of system. Terthiophene-capped SiNPs have been synthesised and characterised before and after doping. Using different ratios and the oxidant NOBF4 to dope the surface ligands, the electrical conductivity has been measured at ambient temperature. The ratio of oxidant to nanoparticles shows similar trends in electrical resistivity to that of conventional conductive polymers and shows significant improvements over the undoped material.

  10. Study of silicone-based materials for the packaging of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced

  11. Progress research of non-Cz silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1983-01-01

    The simultaneous diffusion of liquid boron and liquid phosphorus dopants into N-type dendritic silicon web for solar cells was investigated. It is planned that the diffusion parameters required to achieve the desired P(+)NN(+) cell structure be determined and the resultant cell properties be compared to cells produced in a sequential differential process. A cost analysis of the simultaneous junction formation process is proposed.

  12. Synthesis and electrochemical characterization of Silicon clathrates as anode materials for Lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Raghavan, Rahul

    Novel materials for Li-ion batteries is one of the principle thrust areas for current research in energy storage, more so than most, considering its widespread use in portable electronic gadgets and plug-in electric and hybrid cars. One of the major limiting factors in a Li-ion battery's energy density is the low specific capacities of the active materials in the electrodes. In the search for high-performance anode materials for Li-ion batteries, many alternatives to carbonaceous materials have been studied. Both cubic and amorphous silicon can reversibly alloy with lithium and have a theoretical capacity of 3500 mAh/g, making silicon a potential high density anode material. However, a large volume expansion of 300% occurs due to changes in the structure during lithium insertion, often leading to pulverization of the silicon. To this end, a class of silicon based cage compounds called clathrates are studied for electrochemical reactivity with lithium. Silicon-clathrates consist of silicon covalently bonded in cage structures comprised of face sharing Si20, Si24 and/or Si28 clusters with guest ions occupying the interstitial positions in the polyhedra. Prior to this, silicon clathrates have been studied primarily for their superconducting and thermoelectric properties. In this work, the synthesis and electrochemical characterization of two categories of silicon clathrates - Type-I silicon clathrate with aluminum framework substitution and barium guest ions (Ba8AlxSi46-x) and Type-II silicon clathrate with sodium guest ions (Nax Si136), are explored. The Type-I clathrate, Ba8AlxSi46-x consists of an open framework of aluminium and silicon, with barium (guest) atoms occupying the interstitial positions. X-ray diffraction studies have shown that a crystalline phase of clathrate is obtained from synthesis, which is powdered to a fine particle size to be used as the anode material in a Li-ion battery. Electrochemical measurements of these type of clathrates have shown

  13. ESP – Data from Restarted Life Tests of Various Silicon Materials

    SciTech Connect

    Schneider, Jim

    2010-10-06

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  14. Well-constructed silicon-based materials as high-performance lithium-ion battery anodes.

    PubMed

    Liu, Lehao; Lyu, Jing; Li, Tiehu; Zhao, Tingkai

    2016-01-14

    Silicon has been considered as one of the most promising anode material alternates for next-generation lithium-ion batteries, because of its high theoretical capacity, environmental friendliness, high safety, low cost, etc. Nevertheless, silicon-based anode materials (especially bulk silicon) suffer from severe capacity fading resulting from their low intrinsic electrical conductivity and great volume variation during lithiation/delithiation processes. To address this challenge, a few special constructions from nanostructures to anchored, flexible, sandwich, core-shell, porous and even integrated structures, have been well designed and fabricated to effectively improve the cycling performance of silicon-based anodes. In view of the fast development of silicon-based anode materials, we summarize their recent progress in structural design principles, preparation methods, morphological characteristics and electrochemical performance by highlighting the material structure. We also point out the associated problems and challenges faced by these anodes and introduce some feasible strategies to further boost their electrochemical performance. Furthermore, we give a few suggestions relating to the developing trends to better mature their practical applications in next-generation lithium-ion batteries. PMID:26666682

  15. Well-constructed silicon-based materials as high-performance lithium-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Liu, Lehao; Lyu, Jing; Li, Tiehu; Zhao, Tingkai

    2015-12-01

    Silicon has been considered as one of the most promising anode material alternates for next-generation lithium-ion batteries, because of its high theoretical capacity, environmental friendliness, high safety, low cost, etc. Nevertheless, silicon-based anode materials (especially bulk silicon) suffer from severe capacity fading resulting from their low intrinsic electrical conductivity and great volume variation during lithiation/delithiation processes. To address this challenge, a few special constructions from nanostructures to anchored, flexible, sandwich, core-shell, porous and even integrated structures, have been well designed and fabricated to effectively improve the cycling performance of silicon-based anodes. In view of the fast development of silicon-based anode materials, we summarize their recent progress in structural design principles, preparation methods, morphological characteristics and electrochemical performance by highlighting the material structure. We also point out the associated problems and challenges faced by these anodes and introduce some feasible strategies to further boost their electrochemical performance. Furthermore, we give a few suggestions relating to the developing trends to better mature their practical applications in next-generation lithium-ion batteries.

  16. Process research of non-Czochralski silicon material

    NASA Technical Reports Server (NTRS)

    Campbell, R. B.

    1986-01-01

    Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

  17. Silicone impression material foreign body in the middle ear: Two case reports and literature review.

    PubMed

    Suzuki, Nobuyoshi; Okamura, Koji; Yano, Takuya; Moteki, Hideaki; Kitoh, Ryosuke; Takumi, Yutaka; Usami, Shin-ichi

    2015-10-01

    We report two cases of impression material foreign body in the middle ear. The first case had been affected with chronic otitis media. The silicone flowed into the middle ear through a tympanic membrane perforation during the process of making an ear mold. About 4 years and 8 months after, the patient had severe vertigo and deafness. We found bone erosion of the prominence of the lateral semicircular canal and diagnosed labyrinthitis caused by silicone impression material. In the second case silicone flowed into the canal wall down mastoid cavity. Both cases required surgery to remove the foreign body. The clinical courses in such cases are variable and timing of surgery is sometimes difficult. In addition to reporting these two cases, we present here a review of the literature regarding impression material foreign bodies. PMID:25956272

  18. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  19. Palladium contamination in silicon

    NASA Astrophysics Data System (ADS)

    Polignano, M. L.; Mica, I.; Ceresoli, M.; Codegoni, D.; Somaini, F.; Bianchi, I.; Volonghi, D.

    2015-04-01

    In this work palladium is characterized as a silicon contaminant by recombination lifetime, DLTS, C-V and C-t measurements of palladium-implanted wafers. Palladium introduced by ion implantation is found to remain in the solid solution in silicon after rapid thermal treatments, and to be a very effective recombination center. For this reason recombination lifetime measurements are the most sensitive method to detect palladium in silicon. Two palladium-related levels were found by DLTS in p-type material. One of these levels corresponds to a level reported in the literature as the single donor level of substitutional palladium. For what concerns MOS capacitors, palladium is responsible for negative oxide charge and for degradation of the generation lifetime. In addition, palladium is confirmed to be a very fast diffuser, which segregates at the wafer surface even with low temperature treatments (250 °C). Microscopy inspections showed that palladium precipitates and surface defects were formed upon segregation.

  20. Bi-Se doped with Cu, p-type semiconductor

    SciTech Connect

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  1. Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

    NASA Technical Reports Server (NTRS)

    Sah, C. T.

    1980-01-01

    Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

  2. Timolol maleate release from hyaluronic acid-containing model silicone hydrogel contact lens materials.

    PubMed

    Korogiannaki, Myrto; Guidi, Giuliano; Jones, Lyndon; Sheardown, Heather

    2015-09-01

    This study was designed to assess the impact of a releasable wetting agent, such as hyaluronic acid (HA), on the release profile of timolol maleate (TM) from model silicone hydrogel contact lens materials. Polyvinylpyrrolidone (PVP) was used as an alternative wetting agent for comparison. The model lenses consisted of a hydrophilic monomer, either 2-hydroxyethyl methacrylate or N,N-dimethylacrylamide and a hydrophobic silicone monomer of methacryloxypropyltris (trimethylsiloxy) silane. The loading of the wetting and the therapeutic agent occurred during the synthesis of the silicone hydrogels through the method of direct entrapment. The developed materials were characterized by minimal changes in the water uptake, while lower molecular weight of HA improved their surface wettability. The transparency of the examined silicone hydrogels was found to be affected by the miscibility of the wetting agent in the prepolymer mixture as well as the composition of the developed silicone hydrogels. Sustained release of TM from 4 to 14 days was observed, with the drug transport occurring presumably through the hydrophilic domains of the silicone hydrogels. The release profile was strongly dependent on the hydrophilic monomer composition, the distribution of hydrophobic (silane) domains, and the affinity of the therapeutic agent for the silicone hydrogel matrix. Noncovalent entrapment of the wetting agent did not change the in vitro release duration and kinetics of TM, however the drug release profile was found to be controlled by the simultaneous release of TM and HA or PVP. In the case of HA, depending on the HA:drug ratio, the release rate was decreased and controlled by the release of HA, likely due to electrostatic interactions between protonated TM and anionic HA. Overall, partitioning of the drug within the hydrophilic domains of the silicone hydrogels as well as interactions with the wetting agent determined the drug release profile. PMID:25887216

  3. Phosphorus diffusions for gettering-induced improvement of lifetime in various silicon materials

    SciTech Connect

    Gee, J.M.

    1991-01-01

    Solar-grade silicon frequently contains large quantities of defects and impurities that can significantly degrade the excess-carrier lifetime through introduction of recombination sites. The impurities frequently include metals as well as high concentrations of high carbon and/or oxygen. Defects and impurities can also degrade the electrical properties of solar cells fabricated in solar-grade silicon by causing shunt currents or excess junction current. Fabrication of acceptable solar cells from such materials requires processes that are tolerant of, or that can even improve impure and defective material. Phosphorus diffusion is a well-known technique for gettering of impurities in silicon. The effect of phosphorus diffusion on the excess-carrier lifetime in various silicon materials was investigated. The optimum phosphorus diffusion schedule and enhancement of lifetime was found to be material specific, with substantial (5-fold) increases found for some materials. Possible reasons for the variability of phosphorus gettering with different materials is discussed. 11 refs., 6 figs., 3 tabs.

  4. ESP – Data from Restarted Life Tests of Various Silicone Materials - 2011

    SciTech Connect

    Jim Schneider

    2011-12-31

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. This report will provide data on materials used in production and on experimental materials not used in production. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  5. ESP - Data From Restarted Life Tests of Various Silicone Materials - 2009

    SciTech Connect

    J. W. Schneider

    2010-02-24

    Enhanced Surveillance Project (ESP) funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until ESP funding allowed the restart in FY97. This report will provide data on materials used on various programs and on experimental materials not used in production. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  6. Use of silicon carbide sludge to form porous alkali-activated materials for insulating application

    NASA Astrophysics Data System (ADS)

    Prud'homme, E.; Joussein, E.; Rossignol, S.

    2015-07-01

    One of the objectives in the field of alkali-activated materials is the development of materials having greater thermal performances than conventional construction materials such as aerated concrete. The aim of this paper is to present the possibility to obtain controlled porosity and controlled thermal properties with geopolymer materials including a waste like silicon carbide sludge. The porosity is created by the reaction of free silicon contains in silicon carbide sludge leading to the formation of hydrogen. Two possible ways are investigated to control the porosity: modification of mixture formulation and additives introduction. The first way is the most promising and allowed the formation of materials presenting the same density but various porosities, which shows that the material is adaptable to the application. The insulation properties are logically linked to the porosity and density of materials. A lower value of thermal conductivity of 0.075 W.m-1.K-1 can be reached for a material with a low density of 0.27 g.cm-3. These characteristics are really good for a mineral-based material which always displays non-negligible resistance to manipulation.

  7. Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  8. Flat-plate collector research area: Silicon material task

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1982-01-01

    Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.

  9. Design of Shallow p-type Dopants in ZnO (Presentation)

    SciTech Connect

    Wei, S.H.; Li, J.; Yan. Y.

    2008-05-01

    ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

  10. Lifetime and diffusion length measurements on silicon material and solar cells

    NASA Technical Reports Server (NTRS)

    Othmer, S.; Chen, S. C.

    1978-01-01

    Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plate arrays. Lifetime measurements were made using a steady-state photoconductivity method. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results are compared with those obtained using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.

  11. Thermal/environmental barrier coating system for silicon-based materials

    NASA Technical Reports Server (NTRS)

    Spitsberg, Irene T. (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A coating system for a substrate containing a silicon-based material, such as silicon carbide-containing ceramic matrix materials containing silicon carbide and used to form articles exposed to high temperatures, including the hostile thermal environment of a gas turbine engine. The coating system includes a layer of barium strontium aluminosilicate (BSAS) as a bond coat for a thermal-insulating top coat. As a bond coat, the BSAS layer serves to adhere the top coat to a SiC-containing substrate. The BSAS bond coat exhibits sufficient environmental resistance such that, if the top coat should spall, the BSAS bond coat continues to provide a level of environmental protection to the underlying SiC-containing substrate.

  12. New DEA materials by organic modification of silicone and polyurethane networks

    NASA Astrophysics Data System (ADS)

    Kussmaul, Björn; Risse, Sebastian; Wegener, Michael; Bluemke, Martin; Krause, Jens; Wagner, Joachim; Feller, Torsten; Clauberg, Karin; Hitzbleck, Julia; Gerhard, Reimund; Krueger, Hartmut

    2013-04-01

    Dielectric elastomer actuators (DEAs) can be optimized by modifying the dielectric or mechanical properties of the electroactive polymer. In this work both properties were improved simultaneously by a simple process, the one-step film formation for polyurethane and silicone films. The silicone network contains polydimethylsiloxane (PDMS) chains, as well as cross-linker and grafted molecular dipoles in varying amounts. The process leads to films, which are homogenous down to the molecular level and show higher permittivities as well as reduced stiffnesses. The dipole modification of a new silicone leads to 40 times higher sensitivities, compared to the unmodified films. This new material reaches the sensitivity of the widely used acrylate elatomer VHB4905. A similar silicone modification was obtained by using smart fillers consisting of organic dipoles and additional groups realizing a high compatibility to the silicon network. Polyurethanes are alternative elastomers for DEAs which are compared with the silicones in important properties. Polyurethanes have an intrinsically high dielectric constant (above 7), which is based on the polar nature of the polyurethane fragments. Polyurethanes can be made in roll-to-roll process giving constant mechanical and electrical properties on a high level.

  13. STRENGTH OF N- AND P-TYPE SKUTTERUDITES

    SciTech Connect

    Wereszczak, Andrew A; Ragan, Meredith E; Strong, Kevin T; Ritt, Patrick J; Wang, Hsin; Salvador, James R.; Yang, Jihui

    2010-01-01

    The failure stress distributions of developmental Yb0.27Co4Sb12.08 (n-type) and Ce0.86Co1.02Fe2.98Sb11.97 (p type) skutterudites were measured as a function of temperature. These thermoelectric materials are attractive candidates for use in devices under consideration for power generation sourced from intermediate to high-temperature waste heat recovery. A self-aligning, high-temperature-capable, three-point-bend fixture was developed and used to test specimens whose cross-sectional dimensions were equivalent to those typically used in thermoelectric device legs. The strength of the n-type skutterudite was approximately 115 MPa and independent of temperature to 500 C. The strength of the p-type skutterudite was equivalent to that of the n type material and independent of temperature to at least 200 C, but its strength dropped by ~20% at 400 C. Compared to other skutterudites, the herein tested compositions have equivalent or even superior strength.

  14. Use of Monocrystalline Silicon as Tool Material for Highly Accurate Blanking of Thin Metal Foils

    SciTech Connect

    Hildering, Sven; Engel, Ulf; Merklein, Marion

    2011-05-04

    The trend towards miniaturisation of metallic mass production components combined with increased component functionality is still unbroken. Manufacturing these components by forming and blanking offers economical and ecological advantages combined with the needed accuracy. The complexity of producing tools with geometries below 50 {mu}m by conventional manufacturing methods becomes disproportional higher. Expensive serial finishing operations are required to achieve an adequate surface roughness combined with accurate geometry details. A novel approach for producing such tools is the use of advanced etching technologies for monocrystalline silicon that are well-established in the microsystems technology. High-precision vertical geometries with a width down to 5 {mu}m are possible. The present study shows a novel concept using this potential for the blanking of thin copper foils with monocrystallline silicon as a tool material. A self-contained machine-tool with compact outer dimensions was designed to avoid tensile stresses in the brittle silicon punch by an accurate, careful alignment of the punch, die and metal foil. A microscopic analysis of the monocrystalline silicon punch shows appropriate properties regarding flank angle, edge geometry and surface quality for the blanking process. Using a monocrystalline silicon punch with a width of 70 {mu}m blanking experiments on as-rolled copper foils with a thickness of 20 {mu}m demonstrate the general applicability of this material for micro production processes.

  15. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  16. Plasmonic silicon solar cells: impact of material quality and geometry.

    PubMed

    Pahud, Celine; Isabella, Olindo; Naqavi, Ali; Haug, Franz-Josef; Zeman, Miro; Herzig, Hans Peter; Ballif, Christophe

    2013-09-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We use stencil lithography to produce the same periodic arrangement of the particles and we use the same solar cell structure on top, thus establishing a fair comparison between a novel plasmonic concept and its more traditional counterpart. Both approaches show strong resonances around 700 nm in the external quantum efficiency the position and intensity of which vary strongly with the nanoparticle shape. Moreover, disagreement between simulations and our experimental results suggests that the dielectric data of bulk silver do not correctly represent the reality. A better fit is obtained by introducing a porous interfacial layer between the silver and zinc oxide. Without the interfacial layer, e.g. by improved processing of the nanoparticles, our simulations show that the nanoparticles concept could outperform traditional back reflectors. PMID:24104574

  17. Laser dicing of silicon and composite semiconductor materials

    NASA Astrophysics Data System (ADS)

    Sibailly, Ochelio; Richerzhagen, Bernold

    2004-07-01

    Dicing of semiconductor wafers is an example of an application requiring a processing quality superior to what can be achieved using classical laser techniques. For this reason, sawing the wafers with a diamond-edged blade has been developed into a high-tech process, that guarantees good and reliable cuts for Silicon wafers of more than 300 microns thickness. Today, wafer thickness is getting thinner; down to 50 microns and also more brittle III-V compound semiconductors are used more frequently. On these thin wafers; the laser begins again to compete with the diamond saw, because of laser cutting-quality and cutting-speed, are increasing with decreasing wafer thickness. Conventional laser cutting however has the disadvantages of debris deposition on the wafer surface, weak chip fracture strength because of heat induced micro cracks. An elegant way to overcome these problems is to opt for the water-jet guided laser technology. In this technique the laser is conducted to the work piece by total internal reflection in a 'hair-thin' stable water-jet, comparable to an optical fiber. The water jet guided laser technique was developed originally in order to reduce the heat affected zone near the cut, but in fact the absence of beam divergence and the efficient melt xpulsion are also important advantages. In this presentation we will give an overview on today"s state of the art in dicing thin wafers, especially compound semiconductor wafers, using the water-jet guided laser technology.

  18. Preparation and properties of polyurethane/silicone materials for biomimetic gecko setae

    NASA Astrophysics Data System (ADS)

    Yu, Min; Dai, Zhendong; Yang, Shengrong

    2014-03-01

    In the biomimetic design of gecko setae, it is necessary to select materials with appropriate adhesive properties and to understand the effects of materials on normal and tangential adhesive forces. To meet the adhesion performance requirements of the biomimetic gecko robot foot, in this study, performance-improved polyurethane/silicone polymer materials were designed and synthesized, and the normal adhesion and tangential adhesion were measured using an adhesive friction comprehensive tester. The results show that normal adhesion increased with an increase in load when the normal load is small; when the normal load exceeds a critical value, the increase in normal adhesion slows and adhesion saturates. Under the condition of an adhesive state, the tangential adhesive force was larger for a smaller negative normal force, and a relatively large tangential adhesive force could be generated with a very small negative normal force. The elastic modulus of the synthetic polyurethane/silicone material varied with varying ratios of components, and it increased with increasing urethane content. Polyurethane/silicone material with about 30% polyurethane provided greater adhesion than other materials with different contents of polyurethane. The results provide a basis for the choice of biomimetic materials of the biomimetic gecko robot foot.

  19. Supercritical adsorption testing of porous silicon, activated carbon, and zeolite materials

    NASA Astrophysics Data System (ADS)

    Harvey, Brendan

    The supercritical adsorption of methane gas on porous silicon, activated carbon, and zeolite materials was studied. An apparatus that utilizes the volumetric adsorption measurement technique was designed and constructed to conduct the experiments. Activated carbon materials consisted of Norit RX3 Extra, Zorflex FM30K woven activated carbon cloth, and Zorflex FM10 knitted activated carbon cloth. Zeolite materials consisted of 3A, 4A, 5A, and 13X zeolites. Porous silicon materials consisted of stain etched and electrochemically etched porous films, and stain etched porous powder. All adsorption tests were conducted at room temperature (approximately 298 K) and pressures up to approximately 5 MPa. Overall, the Norit RX3 Extra granulated activated carbon produced the highest excess adsorption and effective storage capacities. Effective storage and delivery capacities of 109 and 90 stpmlml were obtained at a pressure of 3.5 MPa and a temperature of approximately 298 K.

  20. Slicing of silicon into sheet material. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Holden, S. C.; Fleming, J. R.

    1978-01-01

    Fabrication of a prototype large capacity multiple blade slurry saw is considered. Design of the bladehead which will tension up to 1000 blades, and cut a 45 cm long silicon ingot as large as 12 cm in diameter is given. The large blade tensioning force of 270,000 kg is applied through two bolts acting on a pair of scissor toggles, significantly reducing operator set-up time. Tests with an upside-down cutting technique resulted in 100% wafering yields and the highest wafer accuracy yet experienced with MS slicing. Variations in oil and abrasives resulted only in degraded slicing results. A technique of continuous abrasive slurry separation to remove silicon debris is described.

  1. Reaction-sintered silicon carbide: newly developed material for lightweight mirrors

    NASA Astrophysics Data System (ADS)

    Tsuno, Katsuhiko; Irikado, Hiroshi; Hamada, Kazuo; Kazuhiko, Ohno; Ishida, Juro; Suyama, Shoko; Itoh, Yoshiyasu; Ebizuka, Noboru; Eto, Hiroaki; Dai, Yutang

    2004-06-01

    Newly developed high-strength reaction-sintered silicon carbide is an attractive material for lightweight optical mirror with two times higher bending strength than other SiC materials. The polished surface has no pore and is suited to visible region as well as infrared without CVD SiC coating. The fabrication process, with low temperature and small shrinkage, is also suited to develop large scale objects.

  2. Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

    NASA Technical Reports Server (NTRS)

    Huebner, K. H.; Saure, F.

    1983-01-01

    The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

  3. Towards High Performance p-Type Transparent Conducting Oxides

    SciTech Connect

    Roy, B.; Ode, A.; Readey, D.; Perkins, J.; Parilla, P.; Teplin, C.; Kaydanova, T.; Miedaner, A.; Curtis, C.; Martinson, A.; Coutts, T.; Ginley, D.; Hosono, H.

    2003-05-01

    P-type transparent conductive oxides would have potential applications in photovoltaics, transparent electronics and organic opto-electronics. In this paper we present results on the synthesis of Cu2SrO2, a p-type transparent conducting oxide, by a chemical solution route as well as the conventional pulse laser deposition (PLD) method. For Cu2SrO2 by the chemical solution route, samples were made by spraying deposition on quartz substrates using an aqueous solution of Copper formate and Strontium acetate. Phase pure materials were obtained by an optimum two stage annealing sequence. This initial work led to the development of good quality homogeneous films by a related sol-gel approach. We have also used pulsed laser depostion (PLD) to deposit Cu2SrO2 and CuInO2 thin films on quartz substrates. We have obtained improved conductivities in the CuInO2 thin films over previously published work. We present details on the nature of the relationship of process parameters to the opto-electronic properties of the films.

  4. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    NASA Astrophysics Data System (ADS)

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  5. [Rapid determination of silicon content in black liquor of straw fibrous material].

    PubMed

    Li, Hai-Long; Chai, Xin-Sheng; Zhan, Huai-Yu; Liu, Meng-Ru; Fu, Shi-Yu; Sun, Li-Jin

    2012-06-01

    The present paper reports a novel method for the determination of silicon content in straw fibrous material black liquor based on alpha-Si--Mo heteropoly acid spectrophotometry. The selected conditions were as follows: detection wavelength 360 nm, pH 4.0, and reaction time 10 min. It was found that the acidic soluble lignin in the sample liquor was the major interference species in the silicon content determination. The interference of acidic soluble lignin can be eliminated by hydrogen peroxide-nitric acid digestion method. The present method is not only simple, rapid, stable and less interferential, but also of good measurement precision and accuracy, with the relative standard deviations of 0.9%, and recoveries of 99.0%-102%. It is suitable for use in high silicon content of black liquor routine rapid analyses. PMID:22870666

  6. Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

    NASA Astrophysics Data System (ADS)

    Pizzini, S.

    2009-07-01

    The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R&D activity aiming at defining and developing at lab scale a new variety of silicon, called “solar grade” silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author’s viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin.

  7. Effects of material non-linearity on the residual stresses in a dendritic silicon crystal ribbon

    NASA Technical Reports Server (NTRS)

    Ray, Sujit K.; Utku, Senol

    1990-01-01

    Thermal stresses developed in a dendritic silicon crystal ribbon have been shown to cause plastic deformation and residual stresses in the ribbon. This paper presents an implementation of a numerical model proposed for thermoelastoplastic behavior of a material. The model has been used to study the effects of plasticity of silicon on the residual stresses. The material properties required to implement this model are all assumed, and the response of the material to the variations in these assumed parameters of the constitutive law and in the finite element mesh is investigated. The steady state growth process is observed to be periodic with nonzero residual stresses. Numerical difficulties are also encountered in the computer solution process, resulting in sharp jumps and large oscillations in the stress responses.

  8. Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

    NASA Astrophysics Data System (ADS)

    Halim, Martin; Kim, Jung Sub; Choi, Jeong-Gil; Lee, Joong Kee

    2015-04-01

    Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores.

  9. An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

    SciTech Connect

    Rein, M. H.; Holt, A. O.; Hohmann, M. V.; Klein, A.; Thogersen, A.; Mayandi, J.; Monakhov, E. V.

    2013-01-14

    The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.

  10. Novel chemical routes to silicon-germanium-carbon materials

    NASA Astrophysics Data System (ADS)

    Kouvetakis, John; Todd, Michael; Chandrasekhar, D.; Smith, David J.

    1994-12-01

    We report the use of novel molecular precursors and ultrahigh vacuum chemical vapor deposition techniques to synthesize solid solutions of cubic SiC-GeC and diamond-structure Si1-x-yGexCy materials. Thin films with composition Si0.37Ge0.13C0.50 were deposited on Si by thermal decomposition of Ge[Si(CH3)3]4 at 650-700 °C. Electron microscope observations showed a polycrystalline zinc-blende-type structure and infrared (IR) analyses revealed carbide-type Si-C and Ge-C vibrations. The Si1-x-yGexCy (y≳2%) alloys were deposited at 550-600 °C on Si and SiO2 by interactions of (1) C(SiH3)4 and GeH4; (2) CH3GeH3 and SiH4; and (3) CH3GeH3 with mixtures of GeH4 and SiH4. A homogeneous alloy phase of composition Si56Ge30C14 with diamond cubic structure was obtained from reaction 1. Reactions 2 and 3 produced films with carbon compositions ranging from 2 to 27 at. %. The materials containing less than 10% carbon appeared to be exclusively diamond cubic, whereas those with greater carbon compositions showed mixtures of diamond cubic and carbide phases as indicated by vibrational and structural characterization. Secondary ion mass spectrometry experiments revealed that all materials had excellent chemical purity.

  11. p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

    SciTech Connect

    Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

    2014-11-25

    The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

  12. Convergence of valence bands for high thermoelectric performance for p-type InN

    NASA Astrophysics Data System (ADS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-12-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of ZeT is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  13. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB2

    NASA Astrophysics Data System (ADS)

    Ahmad, Sajid; Dubey, K.; Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, A. K.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.

    2016-05-01

    Nearly 60% of the world's useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research[1]. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel[2]. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe and p-type SiGe-x wt.%TiB2 (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α2/ρ) of SiGe alloy on addition of TiB2 upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.

  14. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects.

    PubMed

    Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

    2016-08-19

    For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon. PMID:27383767

  15. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

    NASA Astrophysics Data System (ADS)

    Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

    2016-08-01

    For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10‑8 Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

  16. Amorphous silicon materials and solar cells - Progress and directions

    NASA Astrophysics Data System (ADS)

    Sabisky, E.; Mahan, H.; McMahon, T.

    In 1978, the U.S. Department of Energy initiated government sponsored research in amorphous materials and thin film solar cells. The program was subsequently transferred to the Solar Energy Research Institute for program management. The program grew into a major program for the development of high efficiency (greater than 10 percent), cost effective (15-40 cents per peak watt) thin film amorphous solar cells. The present international interest, the substantial progress made in the device area (2 percent PIN cell in 1976 to 10 percent PIN cell in 1982), and the marketing of the first consumer products using thin film solar cells are to a large ducts using thin film solar cells are to a large extent a consequence of this goal-oriented program.

  17. Structural silicon nitride materials containing rare earth oxides

    DOEpatents

    Andersson, Clarence A.

    1980-01-01

    A ceramic composition suitable for use as a high-temperature structural material, particularly for use in apparatus exposed to oxidizing atmospheres at temperatures of 400 to 1600.degree. C., is found within the triangular area ABCA of the Si.sub.3 N.sub.4 --SiO.sub.2 --M.sub.2 O.sub.3 ternary diagram depicted in FIG. 1. M is selected from the group of Yb, Dy, Er, Sc, and alloys having Yb, Y, Er, or Dy as one component and Sc, Al, Cr, Ti, (Mg +Zr) or (Ni+Zr) as a second component, said alloy having an effective ionic radius less than 0.89 A.

  18. Method of making silicon on insalator material using oxygen implantation

    DOEpatents

    Hite, Larry R.; Houston, Ted; Matloubian, Mishel

    1989-01-01

    The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

  19. Gold nanorods-silicone hybrid material films and their optical limiting property

    NASA Astrophysics Data System (ADS)

    Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

    2015-10-01

    As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

  20. The temperature-dependent coefficient of thermal expansion of p-type Ce0.9Fe3.5Co0.5Sb12 and n-type Co0.95Pd0.05Te0.05Sb3 skutterudite thermoelectric materials

    SciTech Connect

    Schmidt, Robert; Case, Eldon D; Ni, Jennifer E.; Sakamoto, Jeffrey; Trejo, Rosa M; Lara-Curzio, Edgar; Payzant, E Andrew; Kirkham, Melanie J; Meisner, Roberta Ann

    2012-01-01

    During waste heat recovery applications, thermoelectric (TE) materials experience thermal gradients and thermal transients, which produce stresses that scale with the TE material's coefficient of thermal expansion (CTE). Thus, the temperature-dependent CTE is an important parameter for the design of mechanically robust TE generators. For three skutterudite thermoelectric compositions, n-type Co{sub 0.95}Pd{sub 0.05}Te{sub 0.05}Sb{sub 3} (with and without 0.1 at. % cerium doping) and p-type Ce{sub 0.9}Fe{sub 3.5}Co{sub 0.5}Sb{sub 12}, the CTE was measured using two methods, i.e. X-ray diffraction on powder and bulk specimens and dilatometry on bulk specimens. Each bulk specimen was hot pressed using powders milled from cast ingots. Between 300 K and 600 K, the mean CTE values were 9.8-10.3 x 10{sup -6} K{sup -1} for the non-cerium-doped n-type, 11.6 x 10{sup -6} K{sup -1} for the 0.1 at. % cerium-doped n-type and from 12.7 to 13.3 x 10{sup -6} K{sup -1} for the p-type. In the literature, similar CTE values are reported for other Sb-based skutterudites. For temperatures >600 K, an unrecovered dilatational strain (perhaps due to bloating) was observed, which may impact applications. Also, the submicron particle sizes generated by wet milling were pyrophoric; thus, during both processing and characterization, exposure of the powders to oxygen should be limited.

  1. Slicing of Silicon into Sheet Material: Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

    NASA Technical Reports Server (NTRS)

    Fleming, J. R.

    1979-01-01

    Testing of low cost low suspension power slurry vehicles is presented. Cutting oils are unlikely to work, but a mineral oil with additives should be workable. Two different abrasives were tested. A cheaper silicon carbide from Norton gave excellent results except for excessive kerf loss: the particles were too big. An abrasive treated for lubricity showed no lubricity improvement in mineral oil vehicle. The bounce fixture was tested for the first time under constant cut rate conditions (rather than constant force). Although the cut was not completed before the blades broke, the blade lifetime of thin (100 micrometer) blades was 120 times the lifetime without the fixture. The large prototype saw completed a successful run, producing 90% cutting yield (849 wafers) at 20 wafers/cm. Although inexperience with large numbers of wafers caused cleaning breakage to reduce this yield to 74%, the yield was high enough that the concept of the large saw is proven workable.

  2. Change in color of a maxillofacial prosthetic silicone elastomer, following investment in molds of different materials

    PubMed Central

    Sethi, Tania; Kheur, Mohit; Coward, Trevor; Patel, Naimesha

    2015-01-01

    Purpose: In the authors’ experience, the color of silicone elastomer following polymerization in molds made of gypsum products is slightly different from the color that was matched in the presence of the patient, before the silicone is packed. It is hypothesized that the investing materials and separating media have an effect on the color during the polymerization process of the silicone. Materials and Methods: This study compares and evaluates the change in color of silicone elastomer packed in three commonly used investing materials - Dental stone (white color), dental stone (green color), and die stone (orange color); coated with three different separating media – Alginate-based medium, soap solution and a resin-based die hardening material. Pigmented silicone samples of dimensions 1.5 cm × 2 cm × 0.5 cm were made from the elastomer in the above-mentioned mold materials using combinations of the mentioned separating media. These served as test group samples. Control group samples were made by packing a mix of the same pigmented elastomer in stainless steel molds. The L*, a*, b* values of the test and control group samples were determined using a spectrophotometer. The change in color (Delta E) was calculated between the control and test groups. Results: The mean L, a, b values for the control group were, 31.8, 26.2, and 36.3, respectively. Average values of change in color (Delta E) for samples packed utilizing alginate-based medium, die hardener, and soap solution, respectively in white dental stone (2.70, 2.74, and 2.88), green dental stone (2.19, 2.23, 2.42), and orange die stone (3.19, 2.72, 2.80) were tabulated. Conclusion: Among the investing materials studied, die stone showed the most color change (3.19), which was statistically significant. Among the separating media, die hardener showed the least color change (2.23). The best combination of an investing material and separating media as per this investigation is a dental stone (green) and alginate

  3. Chemically modified and nanostructured porous silicon as a drug delivery material and device

    NASA Astrophysics Data System (ADS)

    Anglin, Emily Jessica

    This thesis describes the fabrication, chemical modification, drug release, and toxicity studies of nanostructured porous silicon for the purposes of developing a smart drug delivery device. The first chapter is an introductory chapter, presenting the chemical and physical properties of porous silicon, the concepts and issues of current drug delivery devices and materials, and how porous silicon can address the issues regarding localized and controlled drug therapies. The second chapter discusses chemical modifications of nanostructured porous Si for stabilizing the material in biologically relevant media while providing an extended release of a therapeutic in vitro. This chapter also demonstrates the utility of the porous silicon optical signatures for effectively monitoring drug release from the system and its applications for development of a self-reporting drug delivery device. In chapter three, the concept of providing a triggered release of a therapeutic from porous silicon microparticles through initiation by an external stimulus is demonstrated. The microparticles are chemically modified, and the release is enhanced by a short application of ultrasound to the particulate system. The effect of ultrasound on the drug release and particle size is discussed. Chapter four presents a new method for sustaining the release of a monoclonal antibody from the porous matrix of porous SiO2. The therapeutic is incorporated into the films through electrostatic adsorption and a slow release is observed in vitro. A new method of quantifying the extent of drug loading is monitored with interferometry. The last chapter of the thesis provides a basic in vivo toxicity study of various porous Si microparticles for intraocular applications. Three types of porous Si particles are fabricated and studied in a rabbit eye model. The toxicity studies were conducted by collaborators at the Shiley Eye Center, La Jolla, CA. This work, demonstrates the feasibility of developing a self

  4. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  5. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    NASA Astrophysics Data System (ADS)

    Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

    2013-07-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  6. Sol-gel method of p-type zinc oxide films preparation

    NASA Astrophysics Data System (ADS)

    Poghosyan, Armen R.; Li, XiaoNan; Manukyan, Alexandr L.; Grigoryan, Stepan G.; Vardanyan, Eduard S.

    2007-09-01

    Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes and laser diodes. It is easy to obtain strong n-type ZnO, but very difficult to create consistent, reliable, high-conductivity p-type material. Here we present our investigations of p-type ZnO thin film preparation by sol-gel method using single Li doping and Ga(Al)+N codoping technique. ZnO thin films with c-axis orientation have been prepared on glass substrates. Zn acetate dihydrate, gallium nitrate and acetamide were used as zinc, gallium and nitrogen precursors respectively. SEM, X-ray diffraction, electric conductivity and Hall effect measurements were carried out. The results show that p-type conducting ZnO films with hole concentrations as high as 5x10 17 cm -3 were obtained by this method.

  7. Studies of material and process compatibility in developing compact silicon vapor chambers

    NASA Astrophysics Data System (ADS)

    Cai, Qingjun; Bhunia, Avijit; Tsai, Chialun; Kendig, Martin W.; DeNatale, Jeffrey F.

    2013-06-01

    The performance and long-term reliability of a silicon vapor chamber (SVC) developed for thermal management of high-power electronics critically depend on compatibility of the component materials. A hermetically sealed SVC presented in this paper is composed of bulk silicon, glass-frit as a bonding agent, lead/tin solder as an interface sealant and a copper charging tube. These materials, in the presence of a water/vapor environment, may chemically react and release noncondensable gas (NCG), which can weaken structural strength and degrade the heat transfer performance with time. The present work reports detailed studies on chemical compatibility of the components and potential solutions to avoid the resulting thermal performance degradation. Silicon surface oxidation and purification of operating liquid are necessary steps to reduce performance degradation in the transient period. A lead-based solder with its low reflow temperature is found to be electrochemically stable in water/vapor environment. High glazing temperature solidifies molecular bonding in glass-frit and mitigates PbO precipitation. Numerous liquid flushes guarantee removal of chemical residual after the charging tube is soldered to SVC. With these improvements on the SVC material and process compatibility, high effective thermal conductivity and steady heat transfer performance are obtained.

  8. Thermoelectric materials and methods for synthesis thereof

    SciTech Connect

    Ren, Zhifeng; Zhang, Qinyong; Zhang, Qian; Chen, Gang

    2015-08-04

    Materials having improved thermoelectric properties are disclosed. In some embodiments, lead telluride/selenide based materials with improved figure of merit and mechanical properties are disclosed. In some embodiments, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead telluride materials. In some embodiments, the lead telluride/selenide based materials are formed by doping lead telluride/selenides with potassium.

  9. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOEpatents

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  10. Modeling of the Thermoelectric Properties of p-Type IrSb(sub 3)

    NASA Technical Reports Server (NTRS)

    Fleurial, J.

    1994-01-01

    IrSb(sub 3) is a compound of the skutterudite family of materials now being investigated at JPL. A combination of experimental and theoretical approaches has been recently applied at JPL to evaluate the potential of several thermoelectric materials such as n-type and p-type Si(sub 80) Ge(sub 20) alloys, n-type and p-type Bi(sub 2) Te(sub 3)-based alloys and p-type Ru(sub 2) Ge(sub 3) compound. The use of a comprehensive model for the thermal and electrical transport properties of a given material over its full temperature range of usefulness is a powerful tool for guiding experimental optimization of the composition, temperature and doping level as well as for predicting the maximum ZT value likely to be achieved.

  11. Preparation of Silicon Nitride Multilayer Ceramic Radome Material and Optimal Design of the Wall Structure

    SciTech Connect

    Chen Fei; Shen Qiang; Zhang Lianmeng

    2008-02-15

    A study of silicon nitride ceramic radomes, which includes preparation of the material and optimal design of the radome wall structure, is presented in this paper. Multilayer radome wall structure with high dielectric constant skins and a low dielectric constant core layer is used for broadband application. As a candidate material for both the skins and core layer, silicon nitride ceramics of controlled dielectric constant in the range 3.0{approx}7.5 were prepared by adding different content of sintering aids such as magnesia, alumina, silica and zirconium phosphate binder and choosing suitable sintering methods. A computer aided design (CAD) for the wall structure of silicon nitride multilayer ceramic radome based on microwave equivalent network method is carried out according to design requirements. By optimizing the thickness of skins and core layer, the power transmission efficiency of such a multilayer Si{sub 3}N{sub 4} ceramic radome is calculated. The calculated results suggest that when the dielectric constant of skins lies in the range 6{approx}7.5 and core layer in the range 3.5{approx}4, the power transmission efficiency is above 85% with frequency of 2{approx}18 GHz while the thickness of skins is less than 0.03{lambda} and the thickness ratio of skins to core layer is less than 1:15.

  12. Evaluations of candidate encapsulation designs and materials for low-cost silicon photovoltaic arrays

    NASA Technical Reports Server (NTRS)

    Gaines, G. B.; Carmichael, D. C.; Sliemers, F. A.; Brockway, M. C.; Bunk, A. R.; Nance, G. P.

    1978-01-01

    Three encapsulation designs for silicon photovoltaic arrays based on cells with silk-screened Ag metallization have been evaluated: transparent polymeric coatings over cells laminated between two films or sheets of polymeric materials; cells adhesively bonded to a glass cover with a polymer pottant and a glass or other substrate component. Silicone and acrylic coatings were assessed, together with acrylic sheet, 0.635 mm fiberglass-reinforced polyester sheet, 0.102 mm polycarbonate/acrylic dual-layer film, 0.127 mm fluorocarbon film, soda-lime glass, borosilicate glass, low-iron glass, and several adhesives. The encapsulation materials were characterized by light transmittance measurements, determination of moisture barrier properties and bond strengths, and by the performance of cells before and after encapsulation. Silicon and acrylic coatings provided inadequate protection. Acrylic and fluorocarbon films displayed good weatherability and acceptable optical transmittance. Borosilicate, low-iron and soda-lime-float glasses were found to be acceptable candidate encapsulants for most environments.

  13. Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.

    1983-01-01

    The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

  14. Growth of p-type GaAs/AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

    SciTech Connect

    Li, H.; Mei, T.; Karunasiri, G.; Fan, W.J.; Zhang, D.H.; Yoon, S.F.; Yuan, K.H.

    2005-09-01

    A p-type GaAs/AlGaAs multi-quantum-well infrared photodetector (QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found that Si acts as a p-type dopant in the GaAs (111)A sample while it is n-type in the GaAs (100) counterpart. The growth rate was found to be appreciably enhanced for GaAs (111)A compared with that of GaAs (100) orientation, while the Al composition in the barriers was found to be 20% smaller for a (111) orientation which results in a smaller barrier height. A peak responsivity of 1 mA/W with a relatively wide wavelength response ({delta}{lambda}/{lambda}{sub p}{approx}53%) was observed for the GaAs (111)A QWIP, mainly due to the location of the excited state far above the barrier. The photoresponse also showed a relatively strong normal incident absorption probably originating from the mixing of the conduction and valence Bloch states. The optimization of the quantum well parameters should further enhance the responsivity of this p-type QWIP with Si as dopant species.

  15. Study program to develop and evaluate die and container materials for the growth of silicon ribbons

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Initial sessile drop experiments on SiC, Si3N4 and A1N were conducted. Very promising results were achieved on both SiC and Si3N4 where minimal penetration of these CNTD coatings by molten silicon was observed. More detailed characterization of the CNTD microstructures was accomplished as well as X-ray characterization of the third and fourth candidate materials system sets (i.e. A1N and altered Si3N4). Polished sections of post sessile drop specimens were also prepared and evaluated. The techniques of full scale crucible hot pressing were developed and die grinding development was initiated. The apparatus for measurement of oxygen partial pressure was reconstructed and calibrated. The sessile drop temperature measurement procedure was calibrated for absorption by the pyrex view-port and additional Auger electron analysis was performed at the interface of molten silicon with CNTD Si3N4 and A1N.

  16. Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

    NASA Technical Reports Server (NTRS)

    Dumas, K. A.; Swimm, R. T.

    1980-01-01

    Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

  17. Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981

    SciTech Connect

    Yaws, C.L.; Li, K.Y.; Hopper, J.R.; Fang, C.S.; Hansen, K.C.

    1981-02-06

    The Low-Cost Solar Array (LSA) Project is directed toward effective cost reduction in the production of silicon for solar cells. Results are presented for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells. Major physical, thermodynamic and transport property data are reported for the following silicon source and processing chemical materials: silane, silicon tetrachloride, trichlorosilane, dichlorosilane, silicon tetrafluoride, and silicon. The property data are reported for critical temperature, critical pressure, critical volume, vapor pressure, heat of vaporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analyses involving the preliminary process design of a plant (1000 MT/yr capacity) to produce silicon via the technology under consideration were accomplished for the following processes: UCC silane process for silicon, BCL process for silicon, conventional polysilicon process (Siemens technology), SiI/sub 4/ decomposition process, and DCS process (dichlorosilane).Major activities in chemical engineering analyses include base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provides detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process. Using detailed data from the process design package, economic analyses for a 1000 MT/yr silicon plant were accomplished. Primary results from the economic analyses included plant capital investment and product cost. Results are presented and discussed. (WHK)

  18. p-type Mesoscopic Nickel Oxide/Organometallic Perovskite Heterojunction Solar Cells

    PubMed Central

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-01-01

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics. PMID:24755642

  19. Reaction bonded silicon carbide material characteristics as related to its use in high power laser systems

    NASA Astrophysics Data System (ADS)

    Pitschman, Matthew; Miller, Travis; Hedges, Alan R.; Rummel, Steve

    2014-09-01

    Reaction bonded silicon carbide (RB SiC) is a durable material that is well-suited for use as a high power laser mirror substrate. The reaction bonded material has a low mass density, a high Young's Modulus, good thermal conductivity, and a very low coefficient of thermal expansion. All of these properties are beneficial in mirror substrates used in multikilowatt lasers. In conjunction with the development of RB SiC, special polishing processes, fabrication processes, and coatings have also been developed. In this paper we will present a comparison of the material properties of RB SiC and other mirror materials currently used in high power lasers. A brief overview of the critical fabrication and coating processes will also be reviewed. Finally, we will present thermal heat load test data showing the surface deformation of various high power mirrors used under heat loads typically found in laser systems operating at average powers greater than 10 kilowatts.

  20. Acoustic characterization of polyvinyl chloride and self-healing silicone as phantom materials

    NASA Astrophysics Data System (ADS)

    Ceh, Dennis; Peters, Terry M.; Chen, Elvis C. S.

    2015-03-01

    Phantoms are physical constructs used in procedure planning, training, medical imaging research, and machine calibration. Depending on the application, the material a phantom is made out of is very important. With ultrasound imaging, phantom materials used need to have similar acoustic properties, specifically speed of sound and attenuation, as a specified tissue. Phantoms used with needle insertion require a material with a similar tensile strength as tissue and, if possible, the ability to self heal increasing its overall lifespan. Soft polyvinyl chloride (PVC) and silicone were tested as possible needle insertion phantom materials. Acoustic characteristics were determined using a time of flight technique, where a pulse was passed through a sample contained in a water bath. The speed of sound and attenuation were both determined manually and through spectral analysis. Soft PVC was determined to have a speed of sound of approximately 1395 m/s and attenuation of 0.441 dB/cm (at 1 MHz). For the silicone mixture, the respective speed of sound values was within a range of 964.7 m/s and 1250.0 m/s with an attenuation of 0.547 dB/cm (at 1 MHz).

  1. Photoinduced p-Type Conductivity in n-Type ZnO

    NASA Astrophysics Data System (ADS)

    Zhao, W. X.; Sun, B.; Shen, Z.; Liu, Y. H.; Chen, P.

    2015-03-01

    Ag/[BaTiO3/γ-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance-voltage ( C- V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current-voltage ( I- V) curves of the [BaTiO3/γ-Fe2O3]/ZnO thin films display a strong photoconductivity effect.

  2. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    SciTech Connect

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  3. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    NASA Technical Reports Server (NTRS)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  4. Slicing of silicon into sheet material: Silicon sheet growth development for the large area silicon sheet task of the Low Cost Silicon Solar Array project

    NASA Technical Reports Server (NTRS)

    Fleming, J. R.

    1978-01-01

    The limits of blade tolerance were defined. The standard blades are T-2 thickness tolerance. Good results were obtained by using a slurry fluid consisting of mineral oil and a lubricity additive. Adjustments of the formulation and fine tuning of the cutting process with the new fluid are necessary. Test results and consultation indicate that the blade breakage encountered with water based slurries is unavoidable. Two full capacity (974 wafer) runs were made on the large prototype saw. Both runs resulted in extremely low yield. However, the reasons for the low yield were lack of proper technique rather than problems with machine function. The test on the effect of amount of material etched off of an as-sawn wafer on solar cell efficiency were completed. The results agree with previous work at JPL in that the minimum material removed per side that gives maximum efficiency is on the order of 10 microns.

  5. Study of the Effects of Impurities on the Properties of Silicon Materials and Performance of Silicon Solar Cell

    NASA Technical Reports Server (NTRS)

    Sah, C. T.

    1979-01-01

    Numerical solutions were obtained from the exact one dimensional transmission line circuit model to study the following effects on the terrestrial performance of silicon solar cells: interband Auger recombination; surface recombination at the contact interfaces; enhanced metallic impurity solubility; diffusion profiles; and defect-impurity recombination centers. Thermal recombination parameters of titanium impurity in silicon were estimated from recent experimental data. Based on those parameters, computer model calculations showed that titanium concentration must be kept below 6x10 to the 12th power Ti/cu cm in order to achieve 16% AM1 efficiency in a silicon solar cell of 250 micrometers thick and 1.5 ohm-cm resistivity.

  6. Design and evaluation of carbon nanofiber and silicon materials for neural implant applications

    NASA Astrophysics Data System (ADS)

    McKenzie, Janice L.

    Reduction of glial scar tissue around central nervous system implants is necessary for improved efficacy in chronic applications. Design of materials that possess tunable properties inspired by native biological tissue and elucidation of pertinent cellular interactions with these materials was the motivation for this study. Since nanoscale carbon fibers possess the fundamental dimensional similarities to biological tissue and have attractive material properties needed for neural biomaterial implants, this present study explored cytocompatibility of these materials as well as modifications to traditionally used silicon. On silicon materials, results indicated that nanoscale surface features reduced astrocyte functions, and could be used to guide neurite extension from PC12 cells. Similarly, it was determined that astrocyte functions (key cells in glial scar tissue formation) were reduced on smaller diameter carbon fibers (125 nm or less) while PC12 neurite extension was enhanced on smaller diameter carbon fibers (100 nm or less). Further studies implicated laminin adsorption as a key mechanism in enhancing astrocyte adhesion to larger diameter fibers and at the same time encouraging neurite extension on smaller diameter fibers. Polycarbonate urethane (PCU) was then used as a matrix material for the smaller diameter carbon fibers (100 and 60 nm). These composites proved very versatile since electrical and mechanical properties as well as cell functions and directionality could be influenced by changing bulk and surface composition and features of these matrices. When these composites were modified to be smooth at the micronscale and only rough at the nanoscale, P19 cells actually submerged philopodia, extensions, or whole cells bodies beneath the PCU in order to interact with the carbon nanofibers. These carbon nanofiber composites that have been formulated are a promising material to coat neural probes and thereby enhance functionality at the tissue interface. This

  7. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    NASA Astrophysics Data System (ADS)

    Seyedzahedi, A.; Moradian, A.; Setare, M. R.

    2016-04-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water-lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO2, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  8. Challenges in p-type Doping of CdTe

    NASA Astrophysics Data System (ADS)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  9. Effect of Projectile Materials on Foreign Object Damage of a Gas-Turbine Grade Silicon Nitride

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.; Gyekenyesi, John P.

    2005-01-01

    Foreign object damage (FOD) behavior of AS800 silicon nitride was determined using four different projectile materials at ambient temperature. The target test specimens rigidly supported were impacted at their centers by spherical projectiles with a diameter of 1.59 mm. Four different types of projectiles were used including hardened steel balls, annealed steel balls, silicon nitride balls, and brass balls. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to better understand the severity of local impact damage. The critical impact velocity where target specimens fail upon impact was highest with brass balls, lowest with ceramic ball, and intermediate with annealed and hardened steel balls. Degree of strength degradation upon impact followed the same order as in the critical impact velocity with respect to projectile materials. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles and was correlated in terms of critical impact velocity, impact deformation, and impact load.

  10. A comparison of dimensional accuracy between three different addition cured silicone impression materials.

    PubMed

    Forrester-Baker, L; Seymour, K G; Samarawickrama, D; Zou, L; Cherukara, G; Patel, M

    2005-06-01

    Ten impressions of a metal implant abutment were made with each of three addition-cured silicone impression materials. Using the technique of co-ordinate metrology, the shoulder region of the abutment and corresponding regions of both impressions and dies made from these impressions were scanned and measured. Comparison of these measurements indicated that the mean dimension measured from the shoulder region for each group of impression materials was significantly different from those taken from the original metal implant abutment. However, when these impressions were cast in a gypsum based die material, none of the measured dimensions taken from the casts were significantly different from those taken from the original metal implant abutment. Thus, any change in measured dimensions occurring during impression making, was compensated for in some way by the casting process. PMID:16011234

  11. Laser annealing of amorphous/poly: Silicon solar cell material flight experiment

    NASA Technical Reports Server (NTRS)

    Cole, Eric E.

    1990-01-01

    The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.

  12. Silicon-based materials as high capacity anodes for next generation lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Liang, Bo; Liu, Yanping; Xu, Yunhua

    2014-12-01

    Silicon (Si)-based materials have the highest capacity among the investigated anode materials and have been recognized as one of the most promising materials for lithium-ion batteries. However, it is still a significant challenge to obtain good performance for practical applications due to the huge volume change during the electrochemical process. To date, the most successful strategy is to introduce other components into Si to form composite or alloy materials. In this review, the recent progress in Si-based materials utilized in lithium-ion batteries is reviewed in terms of composite systems, nano-structure designs, material synthesis methods, and electrochemical performances. The merits and disadvantages of different Si-based materials, the understanding of the mechanisms behind the performance enhancement as well as the challenges faced in Si anodes are also discussed. We are trying to present a full scope of the Si-based materials, and help understand and design future structures of Si anodes in lithium-ion batteries.

  13. Study Program to Develop and Evaluate Die and Container Materials for the Growth of Silicon Ribbons

    NASA Technical Reports Server (NTRS)

    Ounby, P. D.; Yu, B. B.; Barsoum, M. W.

    1979-01-01

    The completion of a major hardware delivery milestone was accomplished with the delivery of three CNTD Si3N4 coated hot pressed Si3N4 crucibles. A limited characterization of the coating was performed at MRL prior to delivery. The coatings were fine grained alpha - Si3N4. It was determined that a two piece die design is required. The importance of the role of oxygen in influencing the attack of the CNTD materials by molten silicon was demonstrated. The stability is greatly enhanced by maintaining the oxygen partial pressure near or below the Si + O2 = SiO2 equilibrium.

  14. Transition between ballistic and diffusive heat transport regimes in silicon materials

    NASA Astrophysics Data System (ADS)

    Maldovan, Martin

    2012-09-01

    We study the extent of ballistic and diffusive thermal transport and the range of application of the Casimir and Fourier theories in semiconductor materials by using a theoretical model based on the Boltzmann transport equation. We show that combined effects of length scale, temperature, and boundary roughness are responsible for thermal transport transitions in silicon nanowires and thin films. We also introduce a more accurate principle for ballistic transport that considers the balance between internal and surface scattering. Phonon quantum confinement effects as well as the conditions for phonon wave interference in nanoscale heat transport are discussed.

  15. Interactions of efficiency and material requirements for terrestrial silicon solar cells

    NASA Technical Reports Server (NTRS)

    Bowler, D. L.; Wolf, M.

    1980-01-01

    The transport velocity transformation method was used to analyze solar cell designs to determine optimum cell structures. It was found that low resistivity materials should be used up to the onset of Auger recombination; a properly designed three-layer structure permits base region approaching an ideal device in performance; and that higher resistivity front regions will need more sophisticated grid metallization structures than those used now. It was concluded that new features will provide idealized silicon cell structures yielding airmass 1 efficiencies in the 24-26.5% range, with real efficiencies near 22%.

  16. Mechanical strength of the silicon carbide-bearing materials under cyclic loading

    SciTech Connect

    Babaev, E.I.; Berdichevskii, I.M.; Kozlovskii, L.V.; Mei, E.P.; Rozhkova, R.A.

    1987-03-01

    The authors seek to optimize the firing process for porcelain both for the resulting properties of the porcelain and for the thermal efficiency of the furnace by finding a structural furnace material which will withstand the designated optimal firing regime. To this end they select and test a silicon carbide refractory for its ultimate flexural and compression strength and its resistance to fracture under thermal cycling and stress conditions.In actual service the refractory is found to increase the service life and reduce the frequency of maintenance of the furnace.

  17. Silicon-based elementary particle tracking system: Materials science and mechanical engineering design

    SciTech Connect

    Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Hanlon, J.A.

    1993-01-01

    Research and development of the mechanical, cooling, and structural design aspects of a silicon detector-based elementary particle tracking system has been performed. Achieving stringent system precision, stability, and mass requirements necessitated the use of graphite fiber-reinforced cyanate-ester (C-E) resins. Mechanical test results of the effects of butane, ionizing radiation, and a combination of both on the mechanical properties of these materials are presented, as well as progress on developing compression molding of an ultralightweight graphite composite ring structure and TV holography-based noninvasive evaluation.

  18. Silicon-based elementary particle tracking system: Materials science and mechanical engineering design

    SciTech Connect

    Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Hanlon, J.A.

    1993-05-01

    Research and development of the mechanical, cooling, and structural design aspects of a silicon detector-based elementary particle tracking system has been performed. Achieving stringent system precision, stability, and mass requirements necessitated the use of graphite fiber-reinforced cyanate-ester (C-E) resins. Mechanical test results of the effects of butane, ionizing radiation, and a combination of both on the mechanical properties of these materials are presented, as well as progress on developing compression molding of an ultralightweight graphite composite ring structure and TV holography-based noninvasive evaluation.

  19. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures.

    PubMed

    Pietruszka, Rafal; Witkowski, Bartlomiej Slawomir; Luka, Grzegorz; Wachnicki, Lukasz; Gieraltowska, Sylwia; Kopalko, Krzysztof; Zielony, Eunika; Bieganski, Piotr; Placzek-Popko, Ewa; Godlewski, Marek

    2014-01-01

    Selected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100) are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%. PMID:24605282

  20. Fabrication and morphology of porous p-type SiC

    NASA Astrophysics Data System (ADS)

    Shishkin, Y.; Ke, Y.; Devaty, R. P.; Choyke, W. J.

    2005-02-01

    Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When the etching is done on the C face, the pore wall thickness decreases with increasing current density. The morphology of the front surface of the sample depends on the prior treatment of the workpiece surface. The porosity is estimated based on the analysis of scanning electron microscope images, charge-transfer calculations, and gravimetric analysis.

  1. Optical and Scanning Electron Microscopy of the Materials International Space Station Experiment (MISSE) Spacecraft Silicone Experiment

    NASA Technical Reports Server (NTRS)

    Hung, Ching-cheh; de Groh, Kim K.; Banks, Bruce A.

    2012-01-01

    Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO

  2. Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

    NASA Astrophysics Data System (ADS)

    Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.

    2014-06-01

    A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

  3. On the origin of dislocation loops in irradiated materials: A point of view from silicon

    NASA Astrophysics Data System (ADS)

    Claverie, Alain; Cherkashin, Nikolay

    2016-05-01

    Numerous dislocation loops are often observed in irradiated and nuclear materials, affecting many physical properties. The understanding of their origin and of their growth mechanism remains unclear rendering all modeling efforts elusive. In this paper, we remind the knowledge which has been gained during the last 20 years on the formation and growth of extrinsic dislocations loops in irradiated/implanted silicon. From the compilation of a large number of experimental results, a unified picture describing the thermal evolution of interstitial defects, from the di-interstitial stable at room temperature, to "magic-size" clusters then to rod-like defects and finally to large dislocation loops of two types has emerged. All these defects grow by Ostwald ripening, i.e. by interchanging the interstitial atoms they are composed of, and transform from one to the other driven by the resulting reduction of the defect formation energy. A model has been proposed and is now integrated into process simulators which quantitatively describes the thermal evolution of all these defects, based on pertinent formation energies. The influence of the proximity of free surfaces or other recombining interfaces can be integrated, allowing simulating the possible dissolution of defects. It is suggested that, beyond silicon, the same type of scenario may take place in many materials. Dislocation loops are just one, easily detectable among many, type of defects which forms during the growth of self-interstitials. They do not nucleate but result from the growth and transformation of smaller defects.

  4. Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

    NASA Astrophysics Data System (ADS)

    Lee, Choong Hee; Jeong, Tae Hoon; Kim, Do Kyung; Jeong, Woong Hee; Kang, Myung-Koo; Hwang, Tae Hyung; Kim, Hyun Jae

    2009-02-01

    Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe 2O 3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO 2) and silver (Ag) layer were deposited on the a-Si as buffer layers to prevent the metal diffusion in a-Si during thermite reaction and to transport the thermal energy released from nanoenergetic materials, respectively. Raman measurement was used to define the crystallinity of poly-Si. For molar ratio of Al and Fe of 2 with 100-nm-thick-SiO 2, Raman measurement showed the 519.59 cm -1 of peak position and the 5.08 cm -1 of full width at half maximum with 353 MPa of low tensile stress indicating high quality poly-Si thin film. These results showed that optimized thermite reaction could be used successfully in crystallization of a-Si to high -quality poly-Si thin films.

  5. Electrically exploded silicon/carbon nanocomposite as anode material for lithium-ion batteries.

    PubMed

    Farooq, Umer; Choi, Jeong-Hee; Kim, Doohun; Pervez, Syed Atif; Yaqub, Adnan; Hwang, Min-Ji; Lee, You-Jin; Lee, Won-Jae; Choi, Hae-Young; Lee, Sang-Hoon; You, Ji-Hyun; Ha, Chung-Wan; Doh, Chil-Hoon

    2014-12-01

    In this work, silicon (Si) containing carbon coated core-shell nanostructures were synthesized by electrical explosion of Si wires in ethanol solution followed by high energy mechanical milling (HEMM) process. Material characterization was carried-out using transmission electron microscopy (TEM), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD) analysis. HEMM led to very fine and amorphous Si particles in the presence of carbon and inactive Silicon-Carbide (SiC) matrix. These Si based nanocomposites, obtained through electrical explosion followed by HEMM (milled sample), exhibited enhanced electrochemical performance than unmilled nanocomposites, when evaluated as anode material for lithium-ion batteries (LIBs). On completion of (the) 1st cycle, milled and unmilled sample(s) showed specific discharge capacities around 825 mAh/g and 717 mAh/g, respectively. Interestingly, the coulombic efficiencies of milled and unmilled samples were 98.5% and 97% after 60th cycle respectively. The enhanced electrochemical performance is attributed to fine and amorphous Si based nanocomposite obtained through HEMM process. PMID:25971062

  6. Comparative study of dimensional accuracy of different impression techniques using addition silicone impression material.

    PubMed

    Penaflor, C F; Semacio, R C; De Las Alas, L T; Uy, H G

    1998-01-01

    This study compared dimensional accuracy of the single, double with spacer, double with cut-out and double mix impression technique using addition silicone impression material. A typhodont containing Ivorine teeth model with six (6) full-crown tooth preparations were used as the positive control. Two stone replication models for each impression technique were made as test materials. Accuracy of the techniques were assessed by measuring four dimensions on the stone dies poured from the impression of the Ivorine teeth model. Results indicated that most of the measurements for the height, width and diameter slightly decreased and a few increased compared with the Ivorine teeth model. The double with cut-out and double mix technique presents the least difference from the master model as compared to the two latter impression techniques. PMID:10202524

  7. Contactless Spectral-dependent Charge Carrier Lifetime Measurements in Silicon Photovoltaic Materials

    NASA Astrophysics Data System (ADS)

    Roller, John; Hamadani, Behrang; Dagenais, Mario

    Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV-grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

  8. Electrodeposited copper front metallization for silicon heterojunction solar cells: materials and processes

    SciTech Connect

    Geissbühler, J.; Martin de Nicolas, S.; Faes, A.; Lachowicz, A.; Tomasi, A.; Paviet-Salomon, B.; Lachenal, D.; Papet, P.; Badel, N.; Barraud, L.; Descoeudres, A.; Despeisse, M.; De Wolf, S.; Ballif, C.

    2014-10-20

    Even though screen-printing of low-temperature silver paste remains the state-of-the-art technique for the front-metallization of SHJ solar cells, recent studies have demonstrated large efficiency improvements when copper-electroplated contacts are used instead of screen-printed ones. However, due to the new materials and the new processes introduced by this technique, it is crucial to individually investigate their compatibility with the SHJ cell structure. In this study, we present a detailed analysis of how the performances of SHJ devices may be modified by these new materials and processes. First, effects on the amorphous silicon (a-Si:H) passivation have been studied for various processes such as DI water rinsing, dips in a copper removal solution and direct evaporation of copper on the a-Si:H. Finally, copper electroplating technique has been adapted in order to be applied to more complex cell structures such as high-efficiency IBC-SHJ.

  9. Identification of collected volatile condensable material (CVCM) from ASTM E595 of silicone damper fluid

    NASA Astrophysics Data System (ADS)

    Easton, Myriam P.; Labatete-Goeppinger, Aura C.; Fowler, Jesse D.; Liu, De-Ling

    2014-09-01

    Polydimethylsiloxane damping fluids used for structural deployment mechanisms are not required to be low outgassing. During normal use, these damping fluids are typically encapsulated; however, an unintentional leak may occur which would cause an undesirable contamination at the leak point and form volatile condensable that could reach contamination-sensitive surfaces, degrading the performance of satellites. The collected volatile condensable material (CVCM) at 25 °C from ASTM E595 of a damping fluid, MeSi-300K, was < 0.10%, when the damping fluid was maintained at 125 °C for 24 hours under 10-6 Torr vacuum. MeSi-300K viscosity is 300,000 cSt, which indicates an average molecular weight (MW) of 204,000. This large MW polymer would contain about 2,756 dimethyl siloxane (DMS) units in the chain. These long chains are not expected to be volatile; however, during manufacture, linear chains and cyclic compounds of a smaller number of DMS units produced are volatile. Gas chromatography mass spectrometry (GC-MS) was used to identify the CVCM. Characterization of these materials revealed that the CVCM contained higher MW siloxanes, straight chain and cyclic, in the range of 682 to 1196 (9 to 16 DMS units), whereas CVCM from spacequalified, silicone-based materials have lower MW, 222 to 542 (3 to 7 DMS units). Consequently, contamination from MeSi-300K material would produce greater amounts of higher-MW siloxanes than space-qualified silicones. These higher-MW species would be harder to remove by evaporation and could remain on sensitive surfaces.

  10. Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

    NASA Technical Reports Server (NTRS)

    Parker, R. J.; Zaretsky, E. V.

    1974-01-01

    The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

  11. Development of improved p-type Si-20 at. % Ge by addition of fullerite

    NASA Astrophysics Data System (ADS)

    Cook, B. A.; Harringa, J. L.

    1994-08-01

    In a series of experiments designed to evaluate the possibility of lowering the lattice thermal conductivity of silicon-germanium alloys through the formation of an inert, intragranular nanophase, a number of p-type Si-20 at. % Ge alloys, with a nominal doping level of 0.5 at. % boron, were prepared with varying amounts of fullerite, a mixture of 90% C60+10% C70 with a particle size of 0.7 nm. The alloys were synthesized by mechanical alloying (MA) and the fullerite was added at various stages of the preparation sequence. Compacts consolidated by hot pressing at temperatures of 1200 °C to 1265 °C were found to be fully dense and homogeneous. Each compact was characterized by Hall effect at room temperature and also by electrical resistivity, Seebeck coefficient, and thermal diffusivity measurements to 1000 °C. A reduction in thermal conductivity of up to 22% compared to standard p-type alloys was observed in samples containing 0.8 weight percent additions. In this study, a maximum integrated average figure of merit, Z, between 300 and 1000 °C of 0.65×10-3 °C-1 was obtained, corresponding to 0.4 weight percent addition of fullerite. Observation of selected samples by transmission electron microscopy revealed that the fullerite reacted with silicon to form nanophase SiC inclusions.

  12. Influence of different seed materials on multi-crystalline silicon ingot properties

    NASA Astrophysics Data System (ADS)

    Reimann, C.; Trempa, M.; Lehmann, T.; Rosshirt, K.; Stenzenberger, J.; Friedrich, J.; Hesse, K.; Dornberger, E.

    2016-01-01

    Different silicon feedstock materials, Single Crystalline Crushed (SCS), Fluidized-Bed-Reactor (FBR) and Siemens (SIE) feedstock, were used as seeding layer for growing cylindrical shaped, high performance multi-crystalline ingots with a weight of 1.2 kg. Within the investigations a systematic variation of the particle size of the seeding material in the range of <1 mm up to 15 mm was performed. Grain size, grain orientation, and grain boundary type were evaluated at different ingot heights. These results show clearly, that the microstructure size, respectively the particle size for the crushed single crystalline material, determines the resulting grain structure in the ingot near the seeding position. If the microstructure size is equal to the particle size, as it is the case for the SCS material, the particle size has a significant influence on grain size, grain orientation, and grain boundary distribution. With increasing average particle size of the SCS seed material the grain size increases, the grain orientation distribution becomes less uniform, and the random grain boundary length fraction decreases. If the microstructure size is smaller than the particle size, as it is the case for FBR and SIE feedstock materials, the particle size has no influence on the initial grain structure of the ingot. For FBR and SIE seeding material, small grains, with a homogeneous orientation distribution and a high random grain boundary length fraction are obtained. Therefore, all FBR and all SIE seeding materials, as well as the SCS with particle size <1 mm, show lowest fractions of defected areas at about the same level which were determined by etch pit analysis.

  13. Ethylene oxide-block-butylene oxide copolymer uptake by silicone hydrogel contact lens materials

    NASA Astrophysics Data System (ADS)

    Huo, Yuchen; Ketelson, Howard; Perry, Scott S.

    2013-05-01

    Four major types of silicone hydrogel contact lens material have been investigated following treatments in aqueous solutions containing poly(ethylene oxide) and poly(butylenes oxide) block copolymer (EO-BO). The extent of lens surface modification by EO-BO and the degree of bulk uptake were studied using X-ray photoelectron spectroscopy (XPS) and ultra-performance liquid chromatography (UPLC), respectively. The experimental results suggest that different interaction models exist for the lenses, highlighting the influence of both surface and bulk composition, which greatly differs between the lenses examined. Specifically, lenses with hydrophilic surface treatments, i.e., PureVision® (balafilcon A) and O2OPTIX (lotrafilcon B), demonstrated strong evidence of preferential surface adsorption within the near-surface region. In comparison, surface adsorption on ACUVUE® Oasys® (senofilcon A) and Biofinity® (comfilcon A) was limited. As for bulk absorption, the amount of EO-BO uptake was the greatest for balafilcon A and comfilcon A, and least for lotrafilcon B. These findings confirm the presence of molecular concentration gradients within the silicone hydrogel lenses following exposure to EO-BO solutions, with the nature of such concentration gradients found to be lens-specific. Together, the results suggest opportunities for compositional modifications of lenses for improved performance via solution treatments containing surface-active agents.

  14. Liquid phase crystallized silicon on glass: Technology, material quality and back contacted heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Haschke, Jan; Amkreutz, Daniel; Rech, Bernd

    2016-04-01

    Liquid phase crystallization has emerged as a novel approach to grow large grained polycrystalline silicon films on glass with high electronic quality. In recent years a lot of effort was conducted by different groups to determine and optimize suitable interlayer materials, enhance the crystallographic quality or to improve post crystallization treatments. In this paper, we give an overview on liquid phase crystallization and describe the necessary process steps and discuss their influence on the absorber properties. Available line sources are compared and different interlayer configurations are presented. Furthermore, we present one-dimensional numerical simulations of a rear junction device, considering silicon absorber thicknesses between 1 and 500 µm. We vary the front surface recombination velocity as well as doping density and minority carrier lifetime in the absorber. The simulations suggest that a higher absorber doping density is beneficial for layer thicknesses below 20 µm or when the minority carrier lifetime is short. Finally, we discuss possible routes for device optimization and propose a hybride cell structure to circumvent current limitations in device design.

  15. Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

    NASA Technical Reports Server (NTRS)

    Regnault, W. F.; Yoo, K. C.; Soltani, P. K.; Johnson, S. M.

    1984-01-01

    Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

  16. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    NASA Astrophysics Data System (ADS)

    Koyanagi, Takaaki; Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance L.

    2016-09-01

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. The materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber-reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ∼1 GPa for the fibers and ∼300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ∼1 × 10-7 [dpa-1 MPa-1] at 430-750 °C for the range of 1-30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures-such as grain boundary, crystal orientation, and secondary phases-increase with increasing irradiation temperature.

  17. Neutron-irradiation creep of silicon carbide materials beyond the initial transient

    DOE PAGESBeta

    Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; Hinoki, Tatsuya; Snead, Lance Lewis; Koyanagi, Takaaki

    2016-06-04

    Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

  18. Progress on the carbothermic production of solar-grade silicon using high-purity starting materials

    SciTech Connect

    Schultz, F.W.; Aulich, H.A.; Fenzi, H.J.; Hecht, M.D.

    1984-05-01

    Solar-grade silicon was produced by carbothermic reduction (CR) in a 70 kW arc-furnace. Silicon suitable for solar cells with an efficiency > 10% was obtained form silicon dioxide of different origin and purified carbon. The importance of a low P- and B-concentration (<10/sup 17/a/cm/sup 3/) in the silicon produced was established. Cells made from CR-Si were successfully processed into modules using conventional technology.

  19. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  20. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    PubMed Central

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  1. A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

    NASA Astrophysics Data System (ADS)

    Blanco Carballo, V. M.; Fransen, M.; van der Graaf, H.; Lu, J.; Schmitz, J.

    2011-02-01

    We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with nonpolymeric materials. The device structure is similar to a Microbulk Micromegas design, consisting of a punctured metal grid supported by a continuous perforated insulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/ iC 4H 10 (80/20) and Ar/ iC 4H 10 (80/20) gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13% FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-μm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/ iC 4H 10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.

  2. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  3. High carrier concentration p-type transparent conducting oxide films

    DOEpatents

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  4. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE PAGESBeta

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  5. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    SciTech Connect

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

  6. Synthesis of p-type GaN nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-08-01

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo

  7. Effect of scandium on the optical properties of crystalline silicon material.

    PubMed

    Dong, Xiao; Wang, Yongyong; Li, Xueping; Li, Yingying

    2016-09-01

    We have studied the optical properties of Sc-hyperdoped crystalline silicon based on quantum calculations. We have designed several probable configurations and found that the interstitial atomic positions of Sc (ScI, ScSI, ScTI, ScHI) are stable in the silicon matrix and can largely extend the absorption range of silicon from visible to infrared. The sub-band gap light absorption is attributed to the change of band structures of silicon and its intensity depends on the atomic concentration of Sc in silicon. The special effect of Sc on the properties of silicon will extend the sensitivity of silicon-based photodetectors to near infrared wavelength range. PMID:27607729

  8. Dual-carbon enhanced silicon-based composite as superior anode material for lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Liu, Dai-Huo; Wang, Ying-Ying; Hou, Bao-Hua; Zhang, Jing-Ping; Wang, Rong-Shun; Wu, Xing-Long

    2016-03-01

    Dual-carbon enhanced Si-based composite (Si/C/G) has been prepared via employing the widely distributed, low-cost and environmentally friendly Diatomite mineral as silicon raw material. The preparation processes are very simple, non-toxic and easy to scale up. Electrochemical tests as anode material for lithium ion batteries (LIBs) demonstrate that this Si/C/G composite exhibits much improved Li-storage properties in terms of superior high-rate capabilities and excellent cycle stability compared to the pristine Si material as well as both single-carbon modified composites. Specifically for the Si/C/G composite, it can still deliver a high specific capacity of about 470 mAh g-1 at an ultrahigh current density of 5 A g-1, and exhibit a high capacity of 938 mAh g-1 at 0.1 A g-1 with excellent capacity retention in the following 300 cycles. The significantly enhanced Li-storage properties should be attributed to the co-existence of both highly conductive graphite and amorphous carbon in the Si/C/G composite. While the former can enhance the electrical conductivity of the obtained composite, the latter acts as the adhesives to connect the porous Si particulates and conductive graphite flakes to form robust and stable conductive network.

  9. Influence of pressure and silane depletion on microcrystalline silicon material quality and solar cell performance

    SciTech Connect

    Bugnon, G.; Feltrin, A.; Meillaud, F.; Ballif, C.; Bailat, J.

    2009-03-15

    Hydrogenated microcrystalline silicon growth by very high frequency plasma-enhanced chemical vapor deposition is investigated in an industrial-type parallel plate R and D KAI reactor to study the influence of pressure and silane depletion on material quality. Single junction solar cells with intrinsic layers prepared at high pressures and in high silane depletion conditions exhibit remarkable improvements, reaching 8.2% efficiency. Further analyses show that better cell performances are linked to a significant reduction of the bulk defect density in intrinsic layers. These results can be partly attributed to lower ion bombardment energies due to higher pressures and silane depletion conditions, improving the microcrystalline material quality. Layer amorphization with increasing power density is observed at low pressure and in low silane depletion conditions. A simple model for the average ion energy shows that ion energy estimates are consistent with the amorphization process observed experimentally. Finally, the material quality of a novel regime for high rate deposition is reviewed on the basis of these findings.

  10. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    NASA Technical Reports Server (NTRS)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  11. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  12. Visualization of a hyaluronan network on the surface of silicone-hydrogel materials

    PubMed Central

    Wygladacz, Katarzyna A; Hook, Daniel J

    2016-01-01

    Biotrue multipurpose solution (MPS) is a bioinspired disinfecting and conditioning solution that includes hyaluronic acid (HA) as a natural wetting agent. Previous studies demonstrated that HA sorbed from Biotrue MPS on both conventional and silicone hydrogel (SiHy) contact lens materials; an in vitro simulated-wear test validated the presence of HA on the lens surfaces for as long as 20 hours. In this study, the morphology and distribution of HA sorbed from both Biotrue and pure HA solution on SiHy contact lens surfaces was examined. Atomic force microscopy imaging was used to illustrate the topography of fresh SiHy contact lens materials before and after incubation with 0.1% (w/v) HA solution. The distribution, as well as fine details of the HA network, were resolved by first staining HA with Gram’s safranin, then imaging with confocal laser-scanning microscopy and differential interference-contrast microscopy. In this approach, SiHy materials take up the dye (safranin) nonspecifically, such that the resultant safranin–HA complex appears dim against the fluorescent lens background. Balafilcon A was chosen as the representative of glassy SiHy lenses that require postpolymerization plasma treatment to increase wettability. Senofilcon A and samfilcon A were chosen as representatives of SiHy materials fabricated with an internal wetting agent. A confluent and dim HA–safranin network was observed adhered to balafilcon A, senofilcon A, and samfilcon A lens surfaces incubated with either 0.1% (w/v) HA solution or Biotrue MPS. Therefore, the conditioning function provided by Biotrue MPS may be in part explained by the presence of the HA humectant layer that readily sorbs on the various types of SiHy contact lens materials. PMID:27555749

  13. Visualization of a hyaluronan network on the surface of silicone-hydrogel materials.

    PubMed

    Wygladacz, Katarzyna A; Hook, Daniel J

    2016-01-01

    Biotrue multipurpose solution (MPS) is a bioinspired disinfecting and conditioning solution that includes hyaluronic acid (HA) as a natural wetting agent. Previous studies demonstrated that HA sorbed from Biotrue MPS on both conventional and silicone hydrogel (SiHy) contact lens materials; an in vitro simulated-wear test validated the presence of HA on the lens surfaces for as long as 20 hours. In this study, the morphology and distribution of HA sorbed from both Biotrue and pure HA solution on SiHy contact lens surfaces was examined. Atomic force microscopy imaging was used to illustrate the topography of fresh SiHy contact lens materials before and after incubation with 0.1% (w/v) HA solution. The distribution, as well as fine details of the HA network, were resolved by first staining HA with Gram's safranin, then imaging with confocal laser-scanning microscopy and differential interference-contrast microscopy. In this approach, SiHy materials take up the dye (safranin) nonspecifically, such that the resultant safranin-HA complex appears dim against the fluorescent lens background. Balafilcon A was chosen as the representative of glassy SiHy lenses that require postpolymerization plasma treatment to increase wettability. Senofilcon A and samfilcon A were chosen as representatives of SiHy materials fabricated with an internal wetting agent. A confluent and dim HA-safranin network was observed adhered to balafilcon A, senofilcon A, and samfilcon A lens surfaces incubated with either 0.1% (w/v) HA solution or Biotrue MPS. Therefore, the conditioning function provided by Biotrue MPS may be in part explained by the presence of the HA humectant layer that readily sorbs on the various types of SiHy contact lens materials. PMID:27555749

  14. p -type Bi2Se3 for topological insulator and low-temperature thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Hor, Y. S.; Richardella, A.; Roushan, P.; Xia, Y.; Checkelsky, J. G.; Yazdani, A.; Hasan, M. Z.; Ong, N. P.; Cava, R. J.

    2009-05-01

    The growth and elementary properties of p -type Bi2Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2Se3 , the p -type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98Ca0.02Se3 relative to the n -type material. p -type single crystals with ab -plane Seebeck coefficients of +180μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120μVK-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p -type Bi2Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

  15. Investigation of Intrinsic Electrical Characteristics and Contact Effects in p-Type Tin Monoxide Thin-Film Transistors Using Gated-Four-Probe Measurements.

    PubMed

    Han, Young-Joon; Choi, Yong-Jin; Jeong, Hoon; Kwon, Hyuck-In

    2015-10-01

    We investigate the intrinsic electrical characteristics and source/drain parasitic resistance in p-type SnO TFTs fabricated using Ni electrodes based on the gated-four-probe method. Because of the relatively high work function and inexpensive price, Ni has been most frequently used as the source/drain electrode materials in p-type SnO TFTs. However, our experimental data shows that the width normalized parasitic resistances of SnO TFT with Ni electrodes are around one to three orders of magnitude higher than those in the representative n-type oxide TFT, amorphous indium- gallium-zinc oxide TFT, and are comparable with those in amorphous silicon TFTs with Mo electrodes. This result implies that the electrical performance of the short channel SnO TFT can be dominated by the source/drain parasitic resistances. The intrinsic field-effect mobility extracted without being influenced by source/drain parasitic resistance was ~2.0 cm2/Vs, which is around twice the extrinsic field-effect mobility obtained from the conventional transconductance method. The large contact resistance is believed to be mainly caused from the heterogeneous electronic energy-level mismatch between the SnO and Ni electrodes. PMID:26726376

  16. Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

  17. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G.

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  18. p type doping of zinc oxide by arsenic ion implantation

    SciTech Connect

    Braunstein, G.; Muraviev, A.; Saxena, H.; Dhere, N.; Richter, V.; Kalish, R.

    2005-11-07

    p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ({approx}-196 deg. C), followed by a rapid in situ heating of the sample, at 560 deg. C for 10 min, and ex situ annealing at 900 deg. C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10{sup 13} cm{sup -2} was obtained using this approach, following implantation of 150 keV 5x10{sup 14} As/cm{sup 2}. A conventional room-temperature implantation of 1x10{sup 15} As/cm{sup 2}, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10{sup 12} cm{sup -2}.

  19. P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

    PubMed

    Liu, Xiaochi; Qu, Deshun; Ryu, Jungjin; Ahmed, Faisal; Yang, Zheng; Lee, Daeyeong; Yoo, Won Jong

    2016-03-01

    A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications. PMID:26808483

  20. Low-temperature solution-processed p-type vanadium oxide for perovskite solar cells.

    PubMed

    Sun, Haocheng; Hou, Xiaomeng; Wei, Qiulong; Liu, Huawei; Yang, Kecheng; Wang, Wei; An, Qinyou; Rong, Yaoguang

    2016-06-21

    A low-temperature solution-processed inorganic p-type contact material of vanadium oxide (VOx) was developed to fabricate planar-heterojunction perovskite solar cells. Using a solvent-assisted process, high-quality uniform and compact perovskite (CH3NH3PbI3) films were deposited on VOx coated substrates. Due to the high transmittance and quenching efficiency of VOx layers, a power conversion efficiency of over 14% was achieved. PMID:27263631

  1. P-type conductivity in annealed strontium titanate

    DOE PAGESBeta

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-17

    In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm2/Vs). Average hole densities were in the 109-1010 cm-3 range, consistent with a deep acceptor.

  2. Three-dimensional silicon/carbon core-shell electrode as an anode material for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Kim, Jung Sub; Pfleging, Wilhelm; Kohler, Robert; Seifert, Hans Jürgen; Kim, Tae Yong; Byun, Dongjin; Jung, Hun-Gi; Choi, Wonchang; Lee, Joong Kee

    2015-04-01

    Practical application of silicon anodes for lithium-ion batteries has been mainly hindered because of their low electrical conductivity and large volume change (ca. 300%) occurring during the lithiation and delithiation processes. Thus, the surface engineering of active particles (material design) and the modification of electrode structure (electrode design) of silicon are necessary to alleviate these critical limiting factors. Silicon/carbon core-shell particles (Si@C, material design) are prepared by the thermal decomposition and subsequent three-dimensional (3D) electrode structures (electrode design) with a channel width of 15 μm are incorporated using the laser ablation process. The electrochemical characteristics of 3D Si@C used as the anode material for lithium-ion batteries are investigated to identify the effects of material and electrode design. By the introduction of a carbon coating and the laser structuring, an enhanced performance of Si anode materials exhibiting high specific capacity (>1200 mAh g-1 over 300 cycles), good rate capability (1170 mAh g-1 at 8 A g-1), and stable cycling is achieved. The morphology of the core-shell active material combined with 3D channel architecture can minimize the volume expansion by utilizing the void space during the repeated cycling.

  3. Removal of Silicone Oil From Intraocular Lens Using Novel Surgical Materials

    PubMed Central

    Paschalis, Eleftherios I.; Eliott, Dean; Vavvas, Demetrios G.

    2014-01-01

    Purpose To design, fabricate, and evaluate novel materials to remove silicone oil (SiO) droplets from intraocular lenses (IOL) during vitreoretinal surgery. Methods Three different designs were fabricated using soft lithography of polydimethylsiloxane (PDMS), three-dimensional (3D) inverse PDMS fabrication using water dissolvable particles, and atomic layer deposition (ALD) of alumina (Al2O3) on surgical cellulose fibers. Laboratory tests included static and dynamic contact angle (CA) measurements with water and SiO, nondestructive x-ray microcomputer tomography (micro-CT), and microscopy. SiO removal was performed in vitro and ex vivo using implantable IOLs and explanted porcine eyes. Results All designs exhibited enhanced hydrophobicity and oleophilicity. Static CA measurements with water ranged from 131° to 160° and with SiO CA approximately 0° in 120 seconds following exposure. Nondestructive x-ray analysis of the 3D PDMS showed presence of interconnected polydispersed porosity of 100 to 300 μm in diameter. SiO removal from IOLs was achieved in vitro and ex vivo using standard 20-G vitrectomy instrumentation. Conclusion Removal of SiO from IOLs can be achieved using materials with lower surface energy than that of the IOLs. This can be achieved using appropriate surface chemistry and surface topography. Three designs, with enhanced hydrophobic properties, were fabricated and tested in vitro and ex vivo. All materials remove SiO within an aqueous environment. Preliminary ex vivo results were very promising, opening new possibilities for SiO removal in vitreoretinal surgeries. Translational Relevance This is the first report of an instrument that can lead to successful removal of SiO from the surface of IOL. In addition to the use of this instrument/material in medicine it can also be used in the industry, for example, retrieval of oil spills from bodies of water. PMID:25237593

  4. Effect of silicon and sodium on thermoelectric properties of thallium doped lead telluride based materials

    SciTech Connect

    Zhang, Qinyong; Wang, H; Zhang, Qian; Liu, W.; Yu, Bo; Wang, H; Wang, D.; Ni, G; Chen, Gang; Ren, Z. F.

    2012-01-01

    Thallium (Tl)-doped lead telluride (Tl0.02Pb0.98Te) thermoelectric materials fabricated by ball milling and hot pressing have decent thermoelectric properties but weak mechanical strength. Addition of silicon (Si) nanoparticles strengthened the mechanical property by reducing the grain size and defect density but resulted in low electrical conductivity that was not desired for any thermoelectric materials. Fortunately, doping of sodium (Na) into the Si added Tl0.02Pb0.98Te brings back the high electrical conductivity and yields higher figure-of-merit ZT values of ~1.7 at 770 K. The ZT improvement by Si addition and Na doping in Tl0.02Pb0.98Te sample is the direct result of concurrent electron and phonon engineering by improving the power factor and lowering the thermal conductivity, respectively.

  5. Advanced Non-Destructive Assessment Technology to Determine the Aging of Silicon Containing Materials for Generation IV Nuclear Reactors

    NASA Astrophysics Data System (ADS)

    Koenig, T. W.; Olson, D. L.; Mishra, B.; King, J. C.; Fletcher, J.; Gerstenberger, L.; Lawrence, S.; Martin, A.; Mejia, C.; Meyer, M. K.; Kennedy, R.; Hu, L.; Kohse, G.; Terry, J.

    2011-06-01

    To create an in-situ, real-time method of monitoring neutron damage within a nuclear reactor core, irradiated silicon carbide samples are examined to correlate measurable variations in the material properties with neutron fluence levels experienced by the silicon carbide (SiC) during the irradiation process. The reaction by which phosphorus doping via thermal neutrons occurs in the silicon carbide samples is known to increase electron carrier density. A number of techniques are used to probe the properties of the SiC, including ultrasonic and Hall coefficient measurements, as well as high frequency impedance analysis. Gamma spectroscopy is also used to examine residual radioactivity resulting from irradiation activation of elements in the samples. Hall coefficient measurements produce the expected trend of increasing carrier concentration with higher fluence levels, while high frequency impedance analysis shows an increase in sample impedance with increasing fluence.

  6. Phosphorous and aluminum gettering in Silicon-Film{trademark} Product II material

    SciTech Connect

    Cotter, J.E.; Barnett, A.M.; Hall, R.B.

    1995-08-01

    Gettering processes are being developed for the Silicon-Film{trademark} Product II solar cell structure. These processes have been developed specifically for films of silicon grown on dissimilar substrates with barrier layers. Gettering with both phosphorous- and aluminum-based processing sequences has resulted in enhancement of minority carrier diffusion length. Long diffusion lengths have allowed the characterization of light trapping in thin films of silicon grown on barrier-coated substrates.

  7. FABRICATION OF A RETINAL PROSTHETIC TEST DEVICE USING ELECTRODEPOSITED SILICON OVER POLYPYRROLE PATTERNED WITH SU-8 PHOTORESIST

    PubMed Central

    Miller, Eric; Ellis, Daniel; Charles, Duran; McKenzie, Jason

    2016-01-01

    A materials fabrication study of a photodiode array for possible application of retina prosthesis was undertaken. A test device was fabricated using a glassy carbon electrode patterned with SU-8 photoresist. In the openings, p-type polypyrrole was first electrodeposited using 1-butyl-1-methylpyridinium bis(trifluoromethylsulfonyl)imide ionic liquid. The polypyrrole was self-doped with imide ion at ~1.5 mole %, was verified as p-type, and had a resistivity of ~20 Ωcm. N-type Silicon was then electrodeposited over this layer using silicon tetrachloride / phosphorus trichloride in acetonitrile and passivated in a second electrodeposition using trimethylchlorosilane. Electron microscopy revealed the successful electrodeposition of silicon over patterned polypyrrole. Rudimentary photodiode behavior was observed. The passivation improved but did not completely protect the electrodeposited silicon from oxidation by air.

  8. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air

    NASA Astrophysics Data System (ADS)

    Shimizu, Hirofumi; Sanada, Yuji

    2011-11-01

    Chromium (Cr)-aqueous-solution-rinsed and/or hydrofluoric acid (HF)-solution-dipped p-type silicon (Si) (001) wafer surfaces are investigated by the frequency-dependent alternating current (AC) surface photovoltage (SPV) method. At the Cr(OH)3/p-type Si interface, in principle, a Schottky barrier could not possibly be generated. The Cr ion (Cr3+) is considered to forcibly deprive a p-type Si substrate of electrons during metallization (Cr3++3e-→Cr). Thus, at an early stage of air exposure, a positive fixed oxide charge may be compensated for by electrons, indicating the disappearance of AC SPV. With air exposure time, AC SPV emerges again and increases gradually in a Cr-deposited p-type Si(001) surface. This is because the native oxide between the Cr atom layer and the p-type Si substrate grows with time. As a result, a positive fixed oxide charge exceeds the overall charge state of the Cr-deposited p-type Si surface. Thus, AC SPV appears again and gradually increases with the fixed oxide charge in p-type Si. The saturated value is in a good agreement with that of the HF aqueous-solution-dipped p-type Si surface.

  9. P-type Oxides and the Growth of Heterostructure Oxide Devices

    NASA Astrophysics Data System (ADS)

    Hosono, Hideo

    2002-03-01

    Transparent conductive oxides (TCOs) are widely used as transparent metallic electrodes for various displays and solar cells. However, even though TCO is an n-type semiconductor, there is almost no application based on the active function as a compound semiconductor. The primary reason is because most active functions in semiconductors come from the characteristic properties of p-n junction but TCOs do not have a p-type. We anticipate that new frontier of transparent oxide semiconductors (TOSs) utilizing both optical transparency and electron activity in semiconductors will be opened if a p-type TCO is realized. In 1997, we reported on CuAlO2 (thin films) as the first p-type TCO along with a chemical design concept to explore the candidate materials. After that, a series of p-type TCOs based on a Cu+ -based system have been reported following the design concept, i.e., CuGaO2, CuInO2, and SrCu2O2. In 1999, a transparent p-n heterojunction diode exhibiting a rectifying I-V characteristic was fabricated using a combination of p-SrCu2O2 (SCO) and n-ZnO. Ultraviolet-emitting diode (UV-LED) is a typical active device, which can use the features of TOSs. Thus, since the initiation of our project (October, 1999), we concentrated our effort on the fabrication of UV-LED based on transparent p-n junction composed of TOSs. The fabrication was realized(APL,77,475,2000) by the formation of p-n heterojunction composed of heteroepitaxially grown p-SCO and n-ZnO. In this talk I will review our approach to P-type TCOs and UV-LED based on PN heterojuction utilizing TCOs along with recent advances.

  10. The p-type conduction mechanism in Cu2O: a first principles study.

    PubMed

    Nolan, Michael; Elliott, Simon D

    2006-12-01

    Materials based on Cu2O are potential p-type transparent semiconducting oxides. Developing an understanding of the mechanism leading to p-type behaviour is important. An accepted origin is the formation of Cu vacancies. However, the way in which this mechanism leads to p-type properties needs to be investigated. This paper presents a first principles analysis of the origin of p-type semiconducting behaviour in Cu2O with 1.5 and 3% Cu vacancy concentrations. Plane wave density functional theory (DFT) with the Perdew-Burke Ernzerhof (PBE) exchange-correlation functional is applied. In order to investigate the applicability of DFT, we firstly show that CuO, with 50% Cu vacancies cannot be described with DFT and in order to obtain a consistent description of CuO, the DFT + U approach is applied. The resulting electronic structure is consistent with experiment, with a spin moment of 0.64 mu(B) and an indirect band gap of 1.48 eV for U = 7 eV. However, for a 3% Cu vacancy concentration in Cu2O, the DFT and DFT + U descriptions of Cu vacancies are similar, indicating that DFT is suitable for a small concentration of Cu vacancies; the formation energy of a Cu vacancy is no larger than 1.7 eV. Formation of Cu vacancies produces delocalised hole states with hole effective masses consistent with the semiconducting nature of Cu2O. These results demonstrate that the p-type semiconducting properties observed for Cu2O are explained by a small concentration of Cu vacancies. PMID:19810413

  11. X, E, M, and P-Type Asteroid Spectral Observations

    NASA Astrophysics Data System (ADS)

    Clark, B. E.; Rivkin, A. S.; Bus, S. J.; Sanders, J.

    2003-05-01

    What are the X-types made of? How would knowledge of their composition change our picture of the geological structure of the asteroid regions? X-types are important in the main belt, yet we do not understand their composition or meteorite linkage. This is an outstanding problem in asteroid-meteorite studies, because X-types comprise approximately 20% of the inner main belt (Tholen and Barucci 1989; Bus 1999). We have conducted a program of infrared (0.8-2.5microns) observations aimed at determining mineralogy without albedo information. Because X-types are spectrally like E, M, and P-type asteroids, we observed 18 X-types, 5 E-types, 8 M-types, and 4 P-types. This is the first focused study of XEMP asteroids. In this paper, we present a compositional analysis of the new spectral data. What we call XEMPs are asteroids identified as ambiguous on the basis of their visible spectral properties only (Zellner et al. 1985; Tholen 1984; Bus and Binzel 2002). By convention (Bowell et al. 1978; Tholen and Barucci 1989), X-types with measured geometric albedos are classified into E, M, or P-types, where E-types (designated ``E" based on their possible link with enstatite meteorites) are high-albedo objects, P-types are low-albedo objects (there are no meteorite analogs for these objects), and M-types (designated ``M" based on their possible link with metallic meteorites) are intermediate. Bus and Binzel (2002) found subtle features in X-class spectra in a high resolution survey. We have regrouped XEMP spectra for a reanalysis of the extended wavelength coverage now available (0.3-2.5 microns). When continuum slope is removed, we find distinct 0.9 micron bands at the level of 2-5% in many of our XEMP objects. We also find consistent wavelength maxima near 1.5 microns, and hints of 2.0 micron bands in some objects. Our preliminary findings suggest that new mineralogy-based groupings may be called for, breaking down the old albedo-based E, M, and P-type designations. We

  12. Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

    NASA Technical Reports Server (NTRS)

    Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

    1979-01-01

    The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

  13. Fast characterization of functionalized silica materials by silicon-29 surface-enhanced NMR spectroscopy using dynamic nuclear polarization.

    PubMed

    Lelli, Moreno; Gajan, David; Lesage, Anne; Caporini, Marc A; Vitzthum, Veronika; Miéville, Pascal; Héroguel, Florent; Rascón, Fernando; Roussey, Arthur; Thieuleux, Chloé; Boualleg, Malika; Veyre, Laurent; Bodenhausen, Geoffrey; Copéret, Christophe; Emsley, Lyndon

    2011-02-23

    We demonstrate fast characterization of the distribution of surface bonding modes and interactions in a series of functionalized materials via surface-enhanced nuclear magnetic resonance spectroscopy using dynamic nuclear polarization (DNP). Surface-enhanced silicon-29 DNP NMR spectra were obtained by using incipient wetness impregnation of the sample with a solution containing a polarizing radical (TOTAPOL). We identify and compare the bonding topology of functional groups in materials obtained via a sol-gel process and in materials prepared by post-grafting reactions. Furthermore, the remarkable gain in time provided by surface-enhanced silicon-29 DNP NMR spectroscopy (typically on the order of a factor 400) allows the facile acquisition of two-dimensional correlation spectra. PMID:21280606

  14. White-light and infrared emission from Silicon Oxycarbide-based materials

    NASA Astrophysics Data System (ADS)

    Nikas, Vasileios

    The development of a Si-based light source has attracted a high level of attention due to its potential unique advantages. For one, the monolithic integration of photonics on on-chip level along with the microelectronics devices would enhance the data processing rate. Additionally the cost per transmitted/processed information capacity can be significantly reduced. In this Ph.D. thesis work, amorphous silicon oxycarbide (SiCxOy) is proposed as an active medium for light emission in visible and IR (when doped with Er ions). More specifically, strong room-temperature white luminescence emitted from SiCxOy films grown by thermal chemical vapor deposition (TCVD) is reported. The emission spectra from the films cover a broad spectral range, from blue-violet to near infrared, depending on carbon concentration. It is found that excitation of these materials is primarily taking place through the material absorption while two major excitation bands have been also detected at 3.36 eV and 3.55 eV, associated with Si-C cores and C=O related centers respectively. Furthermore, it was found that the photoluminescence (PL) intensity, in green and red emission bands, was well correlated with Si-O-C bond density, determined from the Fourier transform infrared spectroscopy (FTIR) analysis. Further engineering of the luminescent centers with oxygen treatment and advanced structural analysis with electron paramagnetic resonance confirmed the previous results. (≡Si-)3C * radicals, EX centers and neutral oxygen vacancies were found to exhibit correlation with the matrix luminescence. The infrared emission of Er ions doped in silicon oxycarbide, around 1540 nm (intra-4f Er3+ transition from 4I13/2 to 4I15/2), was also studied. A broad-band excitation behavior was found, suggesting that the energy transfer is matrix assisted. Additionally, the excitation of Er ions was also found to take place through the 3.36eV excitation band and/or the 0.86 eV relaxation between the 3.36 eV and 2.5 e

  15. Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

    NASA Technical Reports Server (NTRS)

    Sah, C. T.

    1981-01-01

    The effect of silicon film thickness on the energy conversion efficiency of a back surface field solar cell is investigated. A computer-aided design study on the dependence of efficiency peaks on the concentrations of the recombination and dopant impurities is presented. The illuminated current voltage characteristics of over 100 cell designs were obtained using the transmission line circuit model to numerically solve the Shockley Equations. Using an AM1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies less than 1% over more than three-to-one range of cell thickness from 30 to 100 microns. Optical reflecting back surface will give only a slight improvement of AM1 efficiency, about 0.7%, in this thickness range. The sensitive dependence of efficiency on patchiness across the back surface field, low high junction in thin cells is noted.

  16. Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures

    SciTech Connect

    Wang, W.L.; Jiang, X.; Taube, K.; Klages, C.

    1997-07-01

    The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and {ital in situ} doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. {copyright} {ital 1997 American Institute of Physics.}

  17. Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

    PubMed

    Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

    2014-11-01

    Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future. PMID:24975009

  18. Quantum mechanical simulation of hole transport in p-type Si Schottky barrier MOSFETs.

    PubMed

    Choi, Wonchul; Shin, Mincheol

    2011-07-01

    A full quantum-mechanical simulation of p-type nanowire Schottky barrier metal oxide silicon field effect transistors (SB-MOSFETs) is performed by solving the three-dimensional Schrödinger and Poisson's equations self-consistently. The non-equilibrium Green's function (NEGF) approach is adopted to treat hole transport, especially quantum tunneling through SB. In this work, p-type nanowire SB-MOSFETs are simulated based on the 3-band k.p method, using the k.p parameters that were tuned by benchmarking against the tight-binding method with sp3s* orbitals. The device shows a strong dependence on the transport direction, due to the orientation-sensitive tunneling effective mass and the confinement energy. With regard to the subthreshold slope, the [110] and [111] oriented devices with long channel show better performance, but they are more vulnerable to the short channel effects than the [100] oriented device. The threshold voltage also shows a greater variation in the [110] and [111] oriented devices with the decrease of the channel length. PMID:22121621

  19. Low-cost solar array project task 1: Silicon material. Gaseous melt replenishment system

    NASA Technical Reports Server (NTRS)

    Jewett, D. N.; Bates, H. E.; Hill, D. M.

    1980-01-01

    The operation of a silicon production technique was demonstrated. The essentials of the method comprise chemical vapor deposition of silicon, by hydrogen reduction of chlorosilanes, on the inside of a quartz reaction vessel having large internal surface area. The system was designed to allow successive deposition-melting cycles, with silicon removal being accomplished by discharging the molten silicon. The liquid product would be suitable for transfer to a crystal growth process, casting into solid form, or production of shots. A scaled-down prototype reactor demonstrated single pass conversion efficiency of 20 percent and deposition rates and energy consumption better than conventional Siemens reactors, via deposition rates of 365 microns/hr. and electrical consumption of 35 Kwhr/kg of silicon produced.

  20. A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

    SciTech Connect

    Dong, Xiao; Zhu, Zhen; Shao, Hezhu; Rong, Ximing; Zhuang, Jun; Li, Ning; Liang, Cong; Sun, Haibin; Zhao, Li; Feng, Guojin

    2014-03-03

    A supersaturation of nitrogen atoms is found in the surface layer of microstructured silicon after femtosecond (fs) laser irradiation in NF{sub 3}. The average nitrogen concentration in the uppermost 50 nm is about 0.5 ± 0.2 at. %, several orders of magnitude higher than the solid solubility of nitrogen atoms in silicon. The nitrogen-hyperdoped silicon shows high crystallinity in the doped layer, which is due to the repairing effect of nitrogen on defects in silicon lattices. Nitrogen atoms and vacancies can be combined into thermal stable complexes after fs laser irradiation, which makes the nitrogen-hyperdoped silicon exhibit good thermal stability of optical properties.

  1. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-17

    In this study, Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO3, or STO) samples that were annealed at 1200°C. Room temperature mobilities above 100 cm2/Vs were measured, an order of magnitude higher than those for electrons (5-10 cm2/Vs). Average hole densities were in the 109-1010 cm-3 range, consistent with a deep acceptor.

  2. P-type conductivity in annealed strontium titanate

    SciTech Connect

    Poole, Violet M.; Corolewski, Caleb D.; McCluskey, Matthew D.

    2015-12-15

    Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

  3. Oxygen-doped porous silicon carbide spheres as electrode materials for supercapacitors.

    PubMed

    Kim, Myeongjin; Ju, Hyun; Kim, Jooheon

    2016-01-28

    Oxygen-containing functional groups were introduced onto the surface of the micro- and meso-porous silicon carbide sphere (MMPSiC) in order to investigate the relationship between the electric double layer properties and pseudo-capacitive properties; the degree of oxidation of MMPSiC was also optimized. Although the oxygenated surface functionalities can lead to a decrease in the surface area of MMPSiC, the oxygen functional groups attached to the external surface can participate in the redox reaction, resulting in the enhancement of the total super-capacitive performance. The MMPSiC electrode oxidized for 24 h exhibits a high charge storage capacity with a specific capacitance of 301.1 F g(-1) at a scan rate of 5 mV s(-1), with 86.8% rate performance from 5 to 500 mV s(-1) in 1 M KCl aqueous electrolyte. This outstanding capacitive performance of the MMPSiC electrode oxidized for 24 h can be attributed to the harmonious synergistic effect between the electric double layer capacitive contribution of MMPSiC and the pseudo-capacitive contribution of the oxygen-containing functional groups. These encouraging results demonstrate that the MMPSiC electrode oxidized for 24 h is a promising candidate for high performance electrode materials for supercapacitors. PMID:26752728

  4. Monodisperse Porous Silicon Spheres as Anode Materials for Lithium Ion Batteries

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Favors, Zachary; Ionescu, Robert; Ye, Rachel; Bay, Hamed Hosseini; Ozkan, Mihrimah; Ozkan, Cengiz S.

    2015-03-01

    Highly monodisperse porous silicon nanospheres (MPSSs) are synthesized via a simple and scalable hydrolysis process with subsequent surface-protected magnesiothermic reduction. The spherical nature of the MPSSs allows for a homogenous stress-strain distribution within the structure during lithiation and delithiation, which dramatically improves the electrochemical stability. To fully extract the real performance of the MPSSs, carbon nanotubes (CNTs) were added to enhance the electronic conductivity within the composite electrode structure, which has been verified to be an effective way to improve the rate and cycling performance of anodes based on nano-Si. The Li-ion battery (LIB) anodes based on MPSSs demonstrate a high reversible capacity of 3105 mAh g-1. In particular, reversible Li storage capacities above 1500 mAh g-1 were maintained after 500 cycles at a high rate of C/2. We believe this innovative approach for synthesizing porous Si-based LIB anode materials by using surface-protected magnesiothermic reduction can be readily applied to other types of SiOx nano/microstructures.

  5. Passivation of nanocrystalline silicon photovoltaic materials employing a negative substrate bias

    NASA Astrophysics Data System (ADS)

    Wen, Chao; Xu, Hao; Liu, Hong; Li, Zhengping; Shen, Wenzhong

    2013-11-01

    Hydrogenated nanocrystalline silicon (nc-Si:H) shows great promise in the application of third-generation thin film photovoltaic cells. However, the mixed-phase structure of nc-Si:H leads to many defects existing in this important solar energy material. Here we present a new way to passivate nc-Si:H films by tuning the negative substrate bias in plasma-enhanced chemical vapor deposition. Microstructures of the nc-Si:H films prepared under a negative bias from 0 to -300 V have been characterized using Raman, x-ray diffraction, transmission electron microscope, and optical transmission techniques. A novel passivation effect on nc-Si:H films has been identified by the volume fraction of voids in nc-Si:H, together with the electrical properties obtained by electron spin resonance and effective minority lifetime measurements. The mechanism of the passivation effect has been demonstrated by infrared spectroscopy, which illustrates that the high-energy H atoms and ions accelerated by an appropriate bias of -180 V can form more hydrides along the grain boundaries and effectively prevent oxygen incursions forming further Si-O/Si interface dangling bonds in the nc-Si:H films. The detrimental influence of a bias over -180 V on the film quality due to the strong ion bombardment of species with excessively high energy has also been observed directly from the surface morphology by atomic force microscopy.

  6. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

    PubMed Central

    2014-01-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect. PMID:24994958

  7. Monodisperse porous silicon spheres as anode materials for lithium ion batteries.

    PubMed

    Wang, Wei; Favors, Zachary; Ionescu, Robert; Ye, Rachel; Bay, Hamed Hosseini; Ozkan, Mihrimah; Ozkan, Cengiz S

    2015-01-01

    Highly monodisperse porous silicon nanospheres (MPSSs) are synthesized via a simple and scalable hydrolysis process with subsequent surface-protected magnesiothermic reduction. The spherical nature of the MPSSs allows for a homogenous stress-strain distribution within the structure during lithiation and delithiation, which dramatically improves the electrochemical stability. To fully extract the real performance of the MPSSs, carbon nanotubes (CNTs) were added to enhance the electronic conductivity within the composite electrode structure, which has been verified to be an effective way to improve the rate and cycling performance of anodes based on nano-Si. The Li-ion battery (LIB) anodes based on MPSSs demonstrate a high reversible capacity of 3105 mAh g(-1). In particular, reversible Li storage capacities above 1500 mAh g(-1) were maintained after 500 cycles at a high rate of C/2. We believe this innovative approach for synthesizing porous Si-based LIB anode materials by using surface-protected magnesiothermic reduction can be readily applied to other types of SiOx nano/microstructures. PMID:25740298

  8. Monodisperse Porous Silicon Spheres as Anode Materials for Lithium Ion Batteries

    PubMed Central

    Wang, Wei; Favors, Zachary; Ionescu, Robert; Ye, Rachel; Bay, Hamed Hosseini; Ozkan, Mihrimah; Ozkan, Cengiz S.

    2015-01-01

    Highly monodisperse porous silicon nanospheres (MPSSs) are synthesized via a simple and scalable hydrolysis process with subsequent surface-protected magnesiothermic reduction. The spherical nature of the MPSSs allows for a homogenous stress-strain distribution within the structure during lithiation and delithiation, which dramatically improves the electrochemical stability. To fully extract the real performance of the MPSSs, carbon nanotubes (CNTs) were added to enhance the electronic conductivity within the composite electrode structure, which has been verified to be an effective way to improve the rate and cycling performance of anodes based on nano-Si. The Li-ion battery (LIB) anodes based on MPSSs demonstrate a high reversible capacity of 3105 mAh g−1. In particular, reversible Li storage capacities above 1500 mAh g−1 were maintained after 500 cycles at a high rate of C/2. We believe this innovative approach for synthesizing porous Si-based LIB anode materials by using surface-protected magnesiothermic reduction can be readily applied to other types of SiOx nano/microstructures. PMID:25740298

  9. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    NASA Astrophysics Data System (ADS)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y2O3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si3N4 specimens, the firing was performed in electric tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  10. Alkaline and ultrasonic dissolution of biological materials for trace silicon determination

    PubMed Central

    Viveros, Robert D.; Liberman, Alexander; Trogler, William C.; Kummel, Andrew C.

    2015-01-01

    A simple method for trace elemental determination in biological tissue has been developed. Novel nanomaterials with biomedical applications necessitate the determination of the in vivo fate of the materials to understand their toxicological profile. Hollow iron-doped calcined silica nanoshells have been used as a model to demonstrate that potassium hydroxide and bath sonication at 50 °C can extract elements from alkaline-soluble nanomaterials. After alkali digestion, nitric acid is used to adjust the pH into a suitable range for analysis using techniques such as inductively coupled plasma optical emission spectrometry which require neutral or acidic analytes. In chicken liver phantoms injected with the nanoshells, 96% of the expected silicon concentration was detected. This value was in good agreement with the 94% detection efficiency of nanoshells dissolved in aqueous solution as a control for potential sample matrix interference. Nanoshell detection was further confirmed in a mouse 24 h after intravenous administration; the measured silica above baseline was 35 times greater or more than the standard deviations of the measurements. This method provides a simple and accurate means to quantify alkaline-soluble nanomaterials in biological tissue. PMID:25909037

  11. Tuning oxygen impurities and microstructure of nanocrystalline silicon photovoltaic materials through hydrogen dilution

    NASA Astrophysics Data System (ADS)

    Wen, Chao; Xu, Hao; He, Wei; Li, Zhengping; Shen, Wenzhong

    2014-06-01

    As a great promising material for third-generation thin-film photovoltaic cells, hydrogenated nanocrystalline silicon (nc-Si:H) thin films have a complex mixed-phase structure, which determines its defectful nature and easy residing of oxygen impurities. We have performed a detailed investigation on the microstructure properties and oxygen impurities in the nc-Si:H thin films prepared under different hydrogen dilution ratio treatment by the plasma-enhanced chemical vapor deposition (PECVD) process. X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and optical transmission spectroscopy have been utilized to fully characterize the microstructure properties of the nc-Si:H films. The oxygen and hydrogen contents have been obtained from infrared absorption spectroscopy. And the configuration state of oxygen impurities on the surface of the films has been confirmed by X-ray photoelectron spectroscopy, indicating that the films were well oxidized in the form of SiO2. The correlation between the hydrogen content and the volume fraction of grain boundaries derived from the Raman measurements shows that the majority of the incorporated hydrogen is localized inside the grain boundaries. Furthermore, with the detailed information on the bonding configurations acquired from the infrared absorption spectroscopy, a full explanation has been provided for the mechanism of the varying microstructure evolution and oxygen impurities based on the two models of ion bombardment effect and hydrogen-induced annealing effect.

  12. [Studies on the cytotoxic action of various silicone rubber impression materials by means of cell culture (author's transl)].

    PubMed

    Watanabe, H

    1977-07-01

    Biological test of the silicone rubber impression materials was done by utilizing tissue cultures of L strain cells. Criteria for cytotoxicity were based upon response index in agar diffusion method which was determined by zone index and lysis index, and morphological observations of the cells. The materials used were chosen among those which were commercially available. Base material, catalyst, unset and set mixes of both materials were tested respectively. X-ray fluorescence analysis of the material was also performed. Following results were obtained. 1) Base material of all the materials showed zone index of a range between 11.8 mm and 18.6 mm. On the otherhand, lysis index was relatively small and minimum response index was 11.8 mm/8.6 mm. The cells appeared normal after cultivation with the base materials, though tissue culture medium became opaque due to dissolution of the base materials. It is revealed that the above results mean little cytotoxicity to the cells. 2) Catalyst, on the otherhand, yielded intense cytotoxicity. Minimum response index for the catalyst was 13.4 mm/14.8 mm. Morphological observation was parallel to the results of agar diffusion method. 3) Unset mixes also yielded intense to moderate cytotoxicity. 4) Set mixes showed a similar in level of cytotoxicity to the unset mixes. 5) X-ray fluorescence analysis of the materials revealed existence of such elements as Si, Sr, Sn, S, Cu and Fe. Moreover, Zn was found in materials A, B, C, D and E; P in materials A and B, and Pb in materials E and F. However, it was unable to show what compound was formed by these elements. It is expected that the present results could give a clue on animal experiments or clinical use from the view point of biocompatibility of silicone rubber impression materials. PMID:282367

  13. Elastic constants determined by nanoindentation for p-type thermoelectric half-Heusler

    SciTech Connect

    Gahlawat, S.; Wheeler, L.; White, K. W. E-mail: kwwhite@uh.edu; He, R.; Chen, S.; Ren, Z. F. E-mail: kwwhite@uh.edu

    2014-08-28

    This paper presents a study of the elastic properties of the p-type thermoelectric half-Heusler material, Hf{sub 0.44}Zr{sub 0.44}Ti{sub 0.12}CoSb{sub 0.8}Sn{sub 0.2}, using nanoindentation. Large grain-sized polycrystalline specimens were fabricated for these measurements, providing sufficient indentation targets within single grains. Electron Backscatter Diffraction methods indexed the target grains for the correlation needed for our elastic analysis of individual single crystals for this cubic thermoelectric material. Elastic properties, including the Zener ratio and the Poisson ratio, obtained from the elasticity tensor are also reported.

  14. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    SciTech Connect

    Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari; Schmidt, Jan

    2015-02-02

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  15. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    NASA Astrophysics Data System (ADS)

    Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari; Schmidt, Jan

    2015-02-01

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlOx) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlOx/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  16. Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa.

    PubMed

    Milne, J S; Favorskiy, I; Rowe, A C H; Arscott, S; Renner, Ch

    2012-06-22

    The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance (G) of n-type silicon eventually saturates at ≈ 45% of its zero-stress value (G(0)) in accordance with the charge transfer model, in p-type material G/G(0) increases above a predicted limit of ≈ 4.5 without any significant saturation, even at 3 GPa. Calculation of G/G(0) using ab initio density functional theory reveals that neither G nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained-silicon technologies. PMID:23004630

  17. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    NASA Astrophysics Data System (ADS)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  18. Solid Silicone Elastomer Material(DC745U)-Historical Overview and New Experimental Results

    SciTech Connect

    Ortiz-Acosta, Denisse

    2012-08-08

    DC745U is a silicone elastomer used in several weapon systems. DC745U is manufactured by Dow Corning and its formulation is proprietary. Risk changes without notification to the customer. {sup 1}H and {sup 29}Si{l_brace}{sup 1}H{r_brace} NMR have previously determined that DC745U contains {approx} 98.5% dimethyl siloxane, {approx}1.5% methyl-phenyl siloxane, and a small amount (<1%) of vinyl siloxane repeat units that are converted to crosslinking sites. The polymer is filled with {approx} 38 wt.% of a mixture of fumed silica and quartz. Some conclusions are: (1) DMA shows that crystallization does have an effect on the mechanical properties of DC745U; (2) DMA shows that the crystallization is time and temperature dependent; (3) Mechanical tests show that DC745U undergo a crystalline transition at temperatures below -50 C; (4) Rate and temperature does not have an effect above crystalline transition; (5) Crystalline transition occurs faster at colder temperatures; (6) The material remains responsive and recovers after warming it to temperature above -40 C; (7) We were able to review all previous historical data on DC745U; (8) Identified specific gaps in materials understanding; (9) Developed design of experiments and testing methods to address gaps associated with post-curing and low temperature mechanical behavior; (10) Resolved questions of post-cure and alleviated concerns associated with low temperature mechanical behavior with soak time and temperature; and (11) This work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

  19. Corrosion Processes of the CANDU Steam Generator Materials in the Presence of Silicon Compounds

    SciTech Connect

    Lucan, Dumitra; Fulger, Manuela; Velciu, Lucian; Lucan, Georgiana; Jinescu, Gheorghita

    2006-07-01

    The feedwater that enters the steam generators (SG) under normal operating conditions is extremely pure but, however, it contains low levels (generally in the {mu}g/l concentration range) of impurities such as iron, chloride, sulphate, silicate, etc. When water is converted into steam and exits the steam generator, the non-volatile impurities are left behind. As a result of their concentration, the bulk steam generator water is considerably higher than the one in the feedwater. Nevertheless, the concentrations of corrosive impurities are in general sufficiently low so that the bulk water is not significantly aggressive towards steam generator materials. The impurities and corrosion products existing in the steam generator concentrate in the porous deposits on the steam generator tubesheet. The chemical reactions that take place between the components of concentrated solutions generate an aggressive environment. The presence of this environment and of the tubesheet crevices lead to localized corrosion and thus the same tubes cannot ensure the heat transfer between the fluids of the primary and secondary circuits. Thus, it becomes necessary the understanding of the corrosion process that develops into SG secondary side. The purpose of this paper is the assessment of corrosion behavior of the tubes materials (Incoloy-800) at the normal secondary circuit parameters (temperature = 2600 deg C, pressure = 5.1 MPa). The testing environment was demineralized water containing silicon compounds, at a pH=9.5 regulated with morpholine and cyclohexyl-amine (all volatile treatment - AVT). The paper presents the results of metallographic examinations as well as the results of electrochemical measurements. (authors)

  20. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

  1. Mechanic and surface properties of central-venous port catheters after removal: A comparison of polyurethane and silicon rubber materials.

    PubMed

    Braun, Ulrike; Lorenz, Edelgard; Weimann, Christiane; Sturm, Heinz; Karimov, Ilham; Ettl, Johannes; Meier, Reinhard; Wohlgemuth, Walter A; Berger, Hermann; Wildgruber, Moritz

    2016-12-01

    Central venous port devices made of two different polymeric materials, thermoplastic polyurethane (TPU) and silicone rubber (SiR), were compared due their material properties. Both naïve catheters as well as catheters after removal from patients were investigated. In lab experiments the influence of various chemo-therapeutic solutions on material properties was investigated, whereas the samples after removal were compared according to the implanted time in patient. The macroscopic, mechanical performance was assessed with dynamic, specially adapted tests for elasticity. The degradation status of the materials was determined with common tools of polymer characterisation, such as infrared spectroscopy, molecular weight measurements and various methods of thermal analysis. The surface morphology was analysed using scanning electron microscopy. A correlation between material properties and clinical performance was proposed. The surface morphology and chemical composition of the polyurethane catheter materials can potentially result in increased susceptibility of the catheter to bloodstream infections and thrombotic complications. The higher mechanic failure, especially with increasing implantation time of the silicone catheters is related to the lower mechanical performance compared to the polyurethane material as well as loss of barium sulphate filler particles near the surface of the catheter. This results in preformed microscopic notches, which act as predetermined sites of fracture. PMID:27552159

  2. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    PubMed

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure. PMID:27304752

  3. Development of high-energy silicon-based anode materials for lithium-ion storage

    NASA Astrophysics Data System (ADS)

    Yi, Ran

    The emerging markets of electric vehicles (EV) and hybrid electric vehicles (HEV) generate a tremendous demand for low-cost lithium-ion batteries (LIBs) with high energy and power densities, and long cycling life. The development of such LIBs requires development of low cost, high-energy-density cathode and anode materials. Conventional anode materials in commercial LIBs are primarily synthetic graphite-based materials with a capacity of ˜370 mAh/g. Improvements in anode performance, particularly in anode capacity, are essential to achieving high energy densities in LIBs for EV and HEV applications. This dissertation focuses on development of micro-sized silicon-carbon (Si-C) composites as anode materials for high energy and power densities LIBs. First, a new, low-cost, large-scale approach was developed to prepare a micro-sized Si-C composite with excellent performance as an anode material for LIBs. The composite shows a reversible capacity of 1459 mAh/g after 200 cycles at 1 A/g (97.8% capacity retention) and excellent high rate performance of 700 mAh/g at 12.8 A/g, and also has a high tap density of 0.78 g/cm3. The structure of the composite, micro-sized as a whole, features the interconnected nanoscale size of the Si building blocks and the uniform carbon filling, which enables the maximum utilization of silicon even when the micro-sized particles break into small pieces upon cycling. To understand the effects of key parameters in designing the micro-sized Si-C composites on their electrochemical performance and explore how to optimize them, the influence of Si nanoscale building block size and carbon coating on the electrochemical performance of the micro-sized Si-C composites were investigated. It has been found that the critical Si building block size is 15 nm, which enables a high capacity without compromising the cycling stability, and that carbon coating at higher temperature improves the 1st cycle coulombic efficiency (CE) and the rate capability

  4. Artifact level produced by different femoral head prostheses in CT imaging: diamond coated silicon nitride as total hip replacement material.

    PubMed

    Rodrigues, Simone P; Paiva, José M; De Francesco, Silvia; Amaral, Margarida I; Oliveira, Filipe J; Silva, Rui F

    2013-01-01

    Commercial femoral head prostheses (cobalt-chromium alloy, yttria partially stabilized zirconia (Y-PSZ) and alumina) and new silicon nitride ceramic ones (nanocrystalline diamond coated and uncoated) were compared in terms of artifact level production by computed tomography (CT). Pelvis examination by CT allows the correct diagnosis of some pathologies (e.g. prostate and colon cancer) and the evaluation of the prosthesis-bone interface in post-operative joint surgery. Artifact quantification is rarely seen in literature despite having a great potential to grade biomaterials according to their imaging properties. Materials' characteristics (density and effective atomic number), size and geometry of the prostheses can cause more or less artifact. A quantification procedure based on the calculation of four statistical parameters for the Hounsfield pixel values (mean, standard deviation, mean squared error and worst case error) is presented. CT sequential and helical scanning modes were performed. Results prove the artifact reproducibility and indicate that the cobalt-chromium and Y-PSZ are the most artifact-inducing materials, while alumina and silicon nitride (diamond coated and uncoated) ceramic ones present a low level of artifact. Considering the excellent biocompatibility and biotribological behaviour reported in earlier works, combined with the high medical imaging quality here assessed, diamond coated silicon nitride ceramics are arising as new materials for joint replacement. PMID:23053807

  5. Si-C linked oligo(ethylene glycol) layers in silicon-based photonic crystals: optimization for implantable optical materials.

    PubMed

    Kilian, Kristopher A; Böcking, Till; Gaus, Katharina; Gal, Michael; Gooding, J Justin

    2007-07-01

    Porous silicon has shown potential for various applications in biology and medicine, which require that the material (1) remain stable for the length of the intended application and (2) resist non-specific adsorption of proteins. Here we explore the efficacy of short oligo(ethylene glycol) moieties incorporated into organic layers via two separate strategies in achieving these aims. In the first strategy the porous silicon structure was modified in a single step via hydrosilylation of alpha-oligo(ethylene glycol)-omega-alkenes containing three or six ethylene glycol units. The second strategy employs two steps: (1) hydrosilylation of succinimidyl-10-undecenoate and (2) coupling of an amino hexa(ethylene glycol) species. The porous silicon photonic crystals modified by the two-step strategy displayed greater stability relative to the single step procedure when exposed to conditions of physiological temperature and pH. Both strategies produced layers that resist non-specific adsorption of proteins as determined with fluorescently labelled bovine serum albumin. The antifouling behaviour and greater stability to physiological conditions provided by this chemistry enhances the suitability of porous silicon for biomaterials applications. PMID:17428533

  6. Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material. Annual report, September 1982-September 1983

    SciTech Connect

    Goesele, U.; Ast, D.G.

    1983-10-01

    This report first provides some background information on intrinsic point defects, and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. We discuss the co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. We assume that the self-interstitial content of these agglomerates determines their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high-temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. It is suggested that oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO/sub 2/ precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO/sub 2/-Si interface of the precipates gives rise to a continuum of donor states and that these interface states are responsible for at least part of the light-enhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

  7. Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach

    NASA Technical Reports Server (NTRS)

    Goesele, U.; Ast, D. G.

    1983-01-01

    Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

  8. Magnesiothermically reduced diatomaceous earth as a porous silicon anode material for lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Shen, Lanyao; Guo, Xianwei; Fang, Xiangpeng; Wang, Zhaoxiang; Chen, Liquan

    2012-09-01

    Three-dimensional porous silicon has been prepared by magnesiothermically reducing diatomaceous earth. BET surface area analysis shows that the specific surface area of the obtained porous silicon is about 96 m2 g-1, much higher than that of the diatomaceous earth (6 m2 g-1). The silicon products after HCl immersion have a porous structure similar to that of the diatomaceous earth, with pore sizes around 200 nm. Galvanostatic cycling tests show that the initial charge and discharge capacities of the porous silicon are 1321 mAh g-1 and 1818 mAh g-1, respectively. A reversible capacity of 633 mAh g-1 is retained after 30 cycles.

  9. Low cost solar array project. Task 1: Silicon material, gaseous melt replenishment system

    NASA Technical Reports Server (NTRS)

    Jewett, D. N.; Bates, H. E.; Hill, D. M.

    1979-01-01

    A system to combine silicon formation, by hydrogen reduction of trichlorosilane, with the capability to replenish a crystal growth system is described. A variety of process parameters to allow sizing and specification of gas handling system components was estimated.

  10. Towards p-type doping of ZnO by ion implantation

    SciTech Connect

    Coleman, V; Tan, H H; Jagadish, C; Kucheyev, S; Phillips, M; Zou, J

    2005-01-18

    Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 x 10{sup 17} ions/cm{sup 2}) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900 C to 1200 C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.

  11. LDEF-space environmental effects on materials: Composites and silicone coatings

    NASA Technical Reports Server (NTRS)

    Petrie, Brian C.

    1991-01-01

    The objective of the Lockheed experiment is to evaluate the effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites. Two diverse categories are reported: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, CTE, and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicon coatings.

  12. LDEF-space environmental effects on materials: Composites and silicone coatings

    NASA Technical Reports Server (NTRS)

    Petrie, Brian C.

    1992-01-01

    The effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites are discussed. Two diverse categories are reported here: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, coefficient of thermal expansion (CTE), and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicone coatings.

  13. Energy Storage Materials from Nature through Nanotechnology: A Sustainable Route from Reed Plants to a Silicon Anode for Lithium-Ion Batteries.

    PubMed

    Liu, Jun; Kopold, Peter; van Aken, Peter A; Maier, Joachim; Yu, Yan

    2015-08-10

    Silicon is an attractive anode material in energy storage devices, as it has a ten times higher theoretical capacity than its state-of-art carbonaceous counterpart. However, the common process to synthesize silicon nanostructured electrodes is complex, costly, and energy-intensive. Three-dimensional (3D) porous silicon-based anode materials have been fabricated from natural reed leaves by calcination and magnesiothermic reduction. This sustainable and highly abundant silica source allows for facile production of 3D porous silicon with very good electrochemical performance. The obtained silicon anode retains the 3D hierarchical architecture of the reed leaf. Impurity leaching and gas release during the fabrication process leads to an interconnected porosity and the reductive treatment to an inside carbon coating. Such anodes show a remarkable Li-ion storage performance: even after 4000 cycles and at a rate of 10 C, a specific capacity of 420 mA h g(-1) is achieved. PMID:26119499

  14. p-Type NiO Hybrid Visible Photodetector.

    PubMed

    Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

    2015-12-23

    A novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10(-2) A W(-1) in 460 nm light. PMID:26654105

  15. Influence of different narrative instructions to record the occlusal contact with silicone registration materials.

    PubMed

    Obara, R; Komiyama, O; Iida, T; Asano, T; De Laat, A; Kawara, M

    2014-03-01

    This study examined the influence of narrative instructions on the occlusal contact area, occlusal contact point and masticatory muscle activities in normal subjects. Twelve healthy men and 12 healthy women with no more than one missing tooth per quadrant participated. Surface EMG was recorded from the masseter and temporal muscle. As a control measurement, intercuspal position was maintained to produce a habitual clenching record (NCR) while the occlusal contact area and occlusal contact point was recorded by means of silicone material. Subsequently, the occlusal contact area was recorded with the narrative instruction for minimum clenching record (MCR), light clenching record (LCR) and strong clenching record (HCR). While the EMG activity (%MVC) increased modestly from MCR to LCR (from 9·3 ± 2·0% to 11·5 ± 1·5%), the occlusal contact area increased rapidly (from 17·2 ± 11·3 mm(2) to 26·8 ± 15·6 mm(2) ) (P < 0·05). Both EMG activity and occlusal contact area increased gradually from LCR to NCR (to 17·7 ± 2·0% and to 31·4 ± 14·2 mm(2) , respectively). Finally, EMG activity still increased from NCR to HCR (to 44·5 ± 3·7%) (P < 0·05), but the occlusal contact area remained stable (to 36·8 ± 16·6 mm(2) ). Occlusal contact points at left posterior, right posterior, anterior and total area were not significantly different between each task. This study showed that narrative instructions while recording the bite can result in largely stable occlusal contact area. An adequate narrative instruction may therefore contribute to taking a stable occlusal recording in natural dentition. PMID:24447195

  16. Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

    PubMed

    Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

    2016-11-01

    Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. PMID:27524006

  17. Lithium-drifted silicon detector with segmented contacts

    DOEpatents

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  18. Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon: Assessing the role of impurities in silicon nitride crucible lining material

    NASA Astrophysics Data System (ADS)

    Buonassisi, T.; Istratov, A. A.; Pickett, M. D.; Rakotoniaina, J.-P.; Breitenstein, O.; Marcus, M. A.; Heald, S. M.; Weber, E. R.

    2006-01-01

    We assess the contamination potential of crucibles used during directionally solidified multicrystalline silicon (mc-Si) ingot casting for cost-effective solar cell wafer production. Highly sensitive, synchrotron-based analytical microprobe techniques were used to study the distributions, sizes, elemental natures and chemical states of impurity-rich particles in α-Si 3N 4 powder representative of what is used to coat the inside of mc-Si ingot-casting crucibles, as well as the as-grown cast mc-Si material. Correlations between the elemental species, chemical states, particle sizes, relative concentrations and locations of impurities (e.g. Fe, Ti, Ca, Zn, Ni, Cu, N, C) concomitant in α-Si 3N 4 and as-grown mc-Si lead us to conclude that α-Si 3N 4 could be a significant source of contaminants during the ingot-casting mc-Si growth process.

  19. Modeling of thorium (IV) ions adsorption onto a novel adsorbent material silicon dioxide nano-balls using response surface methodology.

    PubMed

    Kaynar, Ümit H; Şabikoğlu, Israfil; Kaynar, Sermin Çam; Eral, Meral

    2016-09-01

    The silicon dioxide nano-balls (nano-SiO2) were prepared for the adsorption of thorium (IV) ions from aqueous solution. The synthesized silicon dioxide nano-balls were characterized by Scanning Electron Microscopy/Energy Dispersive X-ray, X-ray Diffraction, Fourier Transform Infrared and BET surface area measurement spectroscopy. The effects of pH, concentration, temperature and the solid-liquid ratio on the adsorption of thorium by nano-balls were optimized using central composite design of response surface methodology. The interaction between four variables was studied and modelled. Furthermore, the statistical analysis of the results was done. Analysis of variance revealed that all of the single effects found statistically significant on the sorption of Th(IV). Probability F-values (F=4.64-14) and correlation coefficients (R(2)=0.99 for Th(IV)) indicate that model fit the experimental data well. The ability of this material to remove Th(IV) from aqueous solution was characterized by Langmuir, Freunlinch and Temkin adsorption isotherms. The adsorption capacity of thorium (IV) achieved 188.2mgg(-1). Thermodynamic parameters were determined and discussed. The batch adsorption condition with respect to interfering ions was tested. The results indicated that silicon dioxide nano-balls were suitable as sorbent material for adsorption and recovery of Th(IV) ions from aqueous solutions. PMID:27451112

  20. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  1. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  2. Facile synthesis of reduced graphene oxide-porous silicon composite as superior anode material for lithium-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Jiao, Lian-Sheng; Liu, Jin-Yu; Li, Hong-Yan; Wu, Tong-Shun; Li, Fenghua; Wang, Hao-Yu; Niu, Li

    2016-05-01

    We report a new method for synthesizing reduced graphene oxide (rGO)-porous silicon composite for lithium-ion battery anodes. Rice husks were used as a as a raw material source for the synthesis of porous Si through magnesiothermic reduction process. The as-obtained composite exhibits good rate and cycling performance taking advantage of the porous structure of silicon inheriting from rice husks and the outstanding characteristic of graphene. A considerably high delithiation capacity of 907 mA h g-1 can be retained even at a rate of 16 A g-1. A discharge capacity of 830 mA h g-1 at a current density of 1 A g-1 was delivered after 200 cycles. This may contribute to the further advancement of Si-based composite anode design.

  3. Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

  4. Facile synthesis of reduced graphene oxide-porous silicon composite as superior anode material for lithium-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Jiao, Lian-Sheng; Liu, Jin-Yu; Li, Hong-Yan; Wu, Tong-Shun; Li, Fenghua; Wang, Hao-Yu; Niu, Li

    2016-05-01

    We report a new method for synthesizing reduced graphene oxide (rGO)-porous silicon composite for lithium-ion battery anodes. Rice husks were used as a as a raw material source for the synthesis of porous Si through magnesiothermic reduction process. The as-obtained composite exhibits good rate and cycling performance taking advantage of the porous structure of silicon inheriting from rice husks and the outstanding characteristic of graphene. A considerably high delithiation capacity of 907 mA h g-1 can be retained even at a rate of 16 A g-1. A discharge capacity of 830 mA h g-1 at a current density of 1 A g-1 was delivered after 200 cycles. This may contribute to the further advancement of Si-based composite anode design.

  5. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  6. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions

    SciTech Connect

    Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

    2004-10-01

    The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

  7. Fullerene C{sub 70} as a p-type donor in organic photovoltaic cells

    SciTech Connect

    Zhuang, Taojun; Wang, Xiao-Feng E-mail: zrhong@ucla.edu Sano, Takeshi; Kido, Junji E-mail: zrhong@ucla.edu; Hong, Ziruo E-mail: zrhong@ucla.edu; Li, Gang; Yang, Yang

    2014-09-01

    Fullerenes and their derivatives have been widely used as n-type materials in organic transistor and photovoltaic devices. Though it is believed that they shall be ambipolar in nature, there have been few direct experimental proofs for that. In this work, fullerene C{sub 70}, known as an efficient acceptor, has been employed as a p-type electron donor in conjunction with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile as an electron acceptor in planar-heterojunction (PHJ) organic photovoltaic (OPV) cells. High fill factors (FFs) of more than 0.70 were reliably achieved with the C{sub 70} layer even up to 100 nm thick in PHJ cells, suggesting the superior potential of fullerene C{sub 70} as the p-type donor in comparison to other conventional donor materials. The optimal efficiency of these unconventional PHJ cells was 2.83% with a short-circuit current of 5.33 mA/cm{sup 2}, an open circuit voltage of 0.72 V, and a FF of 0.74. The results in this work unveil the potential of fullerene materials as donors in OPV devices, and provide alternative approaches towards future OPV applications.

  8. High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

    NASA Technical Reports Server (NTRS)

    Halbig, Michael C.; Singh, Mrityunjay

    2015-01-01

    Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

  9. Silicon-germanium/gallium phosphide material in high power density thermoelectric modules. Final report, February 1980--September 1981

    SciTech Connect

    Not Available

    1981-12-31

    This is the final report of work on the characterization of an improved Si-Ge alloy and the fabrication of thermoelectric devices. The improved Si-Ge alloy uses a small addition of GaP in n- and p- type 80 at.% Si-20 at.% Ge; this addition reduces the thermal conductivity, thereby increasing its figure of merit and conversion efficiency. The thermoelectric devices fabricated include multicouples intended for use in Radioisotope Thermoelectric Generators (RTGs) and ring-type modules intended for use with nuclear reactor heat sources. This report summarizes the effort in the material as well as the device areas and discusses individual phases of each area. Results should form basis for further effort.

  10. Silicon/soft-carbon nanohybrid material with low expansion for high capacity and long cycle life lithium-ion battery

    NASA Astrophysics Data System (ADS)

    Kobayashi, Naoya; Inden, Yuki; Endo, Morinobu

    2016-09-01

    The present study aims at developing a silicon/soft-carbon nanohybrid material for high performance lithium-ion battery (LIB). It is composed of micronized silicon coated with so-called "soft-carbon" dispersed in soft-carbon matrix at nanometer level. This material is characterized with abundant nanosized voids with diameter of ca. 70 nm and hard bulk skeletal structure. It exhibited a long cycle life of 163 charging and discharging cycles with a large capacity of 850 mAh/g and retention rate up to 90% of the initial capacity in a half cell with Li-metal counter electrode. For this new material, the volume expansion ratio was 6.9% at a capacity level of 1100 mAh/g. This electrode capacity is approximately three times larger than that of graphite-based electrode currently used in LIB. Furthermore, this electrode retained 80.9% of its capacity at 250 cycles in a full cell with a LiCoO2 counter electrode. Addition of 5 wt % fluoroethylene carbonate (FEC) to the electrolyte improved the retention up to 81.3% after 300 cycles. These results demonstrate the usefulness and high possibility of this material as the negative electrode of LIB.

  11. Electronic processes in uniaxially stressed p-type germanium

    SciTech Connect

    Dubon, O.D. Jr.

    1996-02-01

    Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.

  12. Greyscale proton beam writing in p-type Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Diering, D.; Spemann, D.; Lenzner, J.; Müller, St.; Böntgen, T.; von Wenckstern, H.

    2013-07-01

    Proton beam writing (PBW) is a well known method for micromachining, e.g. of semiconductors. Up to now, only few indication is given on how the resulting structure height in micromachined semiconductors can be controlled by means of fluence variation. This approach for 3D-microstructuring, called Greyscale PBW, was already successfully demonstrated for negative photoresists. In this study (1 0 0) p-type Gallium Arsenide (GaAs) was irradiated with 2.28 MeV protons and fluences in the range from 1.2×1014 H+ cm-2 to 1.0×1018 H+ cm-2 at the ion beam laboratory LIPSION and subsequently electrochemically etched with 10%-KOH. A linear dependency of structure height on ion fluence was established. In this way, pyramid-like structures as well as concave-shaped structures could be created. GaAs showed a lateral anisotropic etch behaviour during the development step with preferential etching along the [0 1 1] directions. On some structures the surface roughness and the change of conductivity were investigated by atomic force and scanning capacitance microscopy, respectively. The rms roughness of the surface of the structures was 5.4 nm and 10.6 nm for a fluence of 7.8×1015 H+ cm-2 and 1.2×1017 H+ cm-2, respectively. We observed an increasing etching rate for fluences larger than 1016 H+ cm-2.

  13. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    SciTech Connect

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki; Hai, Pham Nam

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  14. Additive-free hot-pressed silicon carbide ceramics-A material with exceptional mechanical properties

    SciTech Connect

    Sajgalik, P.; Sedlacek, J.; Lences, Z.; Dusza, J.; Lin, H. -T.

    2015-12-30

    Densification of silicon carbide without any sintering aids by hot-pressing and rapid hot pressing was investigated. Full density (>99% t.d.) has been reached at 1850 °C, a temperature of at least 150-200 °C lower compared to the up to now known solid state sintered silicon carbide powders. Silicon carbide was freeze granulated and heat treated prior the densification. Furthermore, evolution of microstructure, mechanical properties and creep behavior were evaluated and compared to reference ceramics from as received silicon carbide powder as well as those of commercial one. Novel method results in dense ceramics with Vickers hardness and indentation fracture toughness of 29.0 GPa and 5.25 MPam1/2, respectively. Moreover, the creep rate of 3.8 x 10–9 s–1 at 1450 °C and the load of 100 MPa is comparable to the commercial α-SiC solid state sintered at 2150 °C.

  15. Additive-free hot-pressed silicon carbide ceramics-A material with exceptional mechanical properties

    DOE PAGESBeta

    Sajgalik, P.; Sedlacek, J.; Lences, Z.; Dusza, J.; Lin, H. -T.

    2015-12-30

    Densification of silicon carbide without any sintering aids by hot-pressing and rapid hot pressing was investigated. Full density (>99% t.d.) has been reached at 1850 °C, a temperature of at least 150-200 °C lower compared to the up to now known solid state sintered silicon carbide powders. Silicon carbide was freeze granulated and heat treated prior the densification. Furthermore, evolution of microstructure, mechanical properties and creep behavior were evaluated and compared to reference ceramics from as received silicon carbide powder as well as those of commercial one. Novel method results in dense ceramics with Vickers hardness and indentation fracture toughnessmore » of 29.0 GPa and 5.25 MPam1/2, respectively. Moreover, the creep rate of 3.8 x 10–9 s–1 at 1450 °C and the load of 100 MPa is comparable to the commercial α-SiC solid state sintered at 2150 °C.« less

  16. Process research on Semix Silicon Material (PROSSM). Quarterly report No. 5, December 1, 1981-February 28, 1982

    SciTech Connect

    Wohlgemuth, J H; Warfield, D B

    1982-01-01

    Emphasis was shifted from the development of a cost-effective process sequence to research designed to understand the mechanisms of photovoltaic conversion in semicrystalline silicon. With this change has gone a change of title from Module Experimental Process System Development Unit (MEPSDU) to Process Research of Semix Silicon Material (PROSSM). Efforts are now underway to prepare a revised program plan with emphasis on determining the mechanisms limiting voltage and current collection in the semicrystalline silicon. The efforts reported concern work done before the change in emphasis and so the continued development of the cost-effective process sequence is reported. A cost-effective process sequence was identified, equipment was designed to implement a 6.6 MW per year automated production line, and a cost analysis projected a $0.56 per watt cell add-on cost for this line. Four process steps were developed for this program: glass bead back clean-up; hot spray antireflective coating; wave-soldering of fronts; ion milling for edging. While spray dopants were advertised as an off the shelf developed product, they proved to be unreliable with shorter than advertised shelf life. Equipment for handling and processing solar cells is available for all of the cell processing steps identified in this program. During this quarter efforts included work on spray dopant, edging, AR coating, wave soldering and fluxing, ion milling and cost analysis.

  17. Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

    NASA Technical Reports Server (NTRS)

    Kachare, A. H.; Hyland, S. L.; Garlick, G. F. J.

    1981-01-01

    The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

  18. PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

    NASA Astrophysics Data System (ADS)

    Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

    2012-12-01

    More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible

  19. Synthesis and electrochemical characterization of anode material with titanium-silicon alloy solid core/nanoporous silicon shell structures for lithium rechargeable batteries

    NASA Astrophysics Data System (ADS)

    Park, Jung-Bae; Ham, Jun-Sik; Shin, Min-Seon; Park, Hong-Kyu; Lee, Yong-Ju; Lee, Sung-Man

    2015-12-01

    Composite materials composed of titanium-silicon alloy (Ti-Si alloy) core and porous Si shell (core-shell (C/S) composite) are prepared, and their electrochemical performance as anode materials for lithium-ion batteries is reported. The C/S composites are fabricated by selective etching of the titanium silicide phase in the surface region of a Ti-Si alloy that consists of titanium silicide and Si phases. The Ti-Si alloy is mechanically alloyed (MA) by ball-milling a mixture containing elemental Si and TiH2. Prior to the etching treatment, some of the MA samples are annealed at temperatures ranging from 600 to 800 °C to further develop the crystalline structure; annealing leads to the increase in the crystallite size of the Si and silicide phases. Thereby, the core and shell structure of the C/S composites and their electrochemical behaviors are controlled. Electrodes prepared by blending the C/S composites with graphite show good cycle performance and rate capability.

  20. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

    PubMed

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  1. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    PubMed Central

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  2. Characterization of the impurities in tungsten/silicon-germanium contacts

    SciTech Connect

    Gregg, H.A. Sr.

    1986-03-26

    Secondary ion mass spectrometry and Auger electron spectrometry depth profiling were used to determine impurity distributions in sputter deposited tungsten films over N-type and P-type 80/20 silicon-germanium elements of thermoelectric devices. These analyses showed that silicon, oxygen, sodium, boron, and phosphorous were present as impurities in the tungsten film. All these impurities except oxygen and sodium came from the substrate. Oxygen was gettered by the tungsten films, while sodium was possibly the result of sample handling. Further, the results from this study indicate that an oxide build-up, primarily at the tungsten/silicon-germanium interface of the N-type materials, is the major contributor to contact resistance in thermoelectric devices.

  3. Influence of fluids on the abrasion of silicon by diamond

    NASA Technical Reports Server (NTRS)

    Danyluk, S.

    1982-01-01

    Silicon wafers ((100)-p-type) were abraded at room temperature in acetone, absolute ethanol and water by a pyramid diamond and the resulting groove depth was measured as a function of normal force on the diamond and the absorbed fluids, while all other experimental conditions were held constant. The groove depth rates are in the ratio of 1:2:3 for water, absolute ethanol, and acetone, respectively, for a constant normal force. The groove depth rate is lower when the normal force is decreased. The silicon abraded in the presence of water was chipped as expected for a classical brittle material while the surfaces abraded in the other two fluids showed ductile ploughing as the main mechanism for silicon removal.

  4. Foreign Object Damage in a Gas-Turbine Grade Silicon Nitride by Spherical Projectiles of Various Materials

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.

    2006-01-01

    Assessments of foreign object damage (FOD) of a commercial, gas-turbine grade, in situ toughened silicon nitride ceramic (AS800, Honeywell Ceramics Components) were made using four different projectile materials at ambient temperature. AS800 flexure target specimens rigidly supported were impacted at their centers in a velocity range from 50 to 450 m/s by spherical projectiles with a diameter of 1.59 mm. Four different projectile materials were used including hardened steel, annealed steel, silicon nitride ceramic, and brass. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to appraise the severity of local impact damage. For a given impact velocity, the degree of strength degradation was greatest for ceramic balls, least for brass balls, and intermediate for annealed and hardened steel balls. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles. Impact load as a function of impact velocity was quasi-statically estimated based on both impact and static indentation associated data.

  5. Process feasibility study in support of silicon material task 1. Quarterly technical progress report (XX), June 1-August 31, 1980

    SciTech Connect

    Yaws, C.L.; Li, K.Y.

    1980-09-01

    Analyses of process system properties were continued for chemical materials important in the production of silicon including compilation and collection activities of the property data for use in the final report. Major efforts in chemical engineering analysis centered on the DCS process - Case A which involves production of dichlorosilane (DCS) as a silicon source material for polysilicon production in the Hemlock Semiconductor Corporation program. The preliminary process design of a plant to produce DCS was completed including process flowsheet (100%), base case conditions (100%), reaction chemistry (100%), raw materials (100%), utilities (100%), major process equipment (100%) and production labor (100%). The process design package was forwarded for economic analysis. Economic analysis of the DCS process - Case A was completed during this reporting period. The results for dichlorosilane (DCS) indicated a total product cost without profit of 1.29 $/kg (1980 dollars). This product cost without profit includes direct manufacturing cost, indirect manufacturing cost, plant overhead and general expenses. The sales price of DCS at 15% DCF rate of return on investment is 1.47$/kg (1980 dollars). Additional results are reported for sales price of dichlorosilane at various profitability levels as measured by ROI (return on original investment) and DCF (discounted cash flow rate of return).

  6. Caramel popcorn shaped silicon particle with carbon coating as a high performance anode material for Li-ion batteries.

    PubMed

    He, Meinan; Sa, Qina; Liu, Gao; Wang, Yan

    2013-11-13

    Silicon is a very promising anode material for lithium ion batteries. It has a 4200 mAh/g theoretical capacity, which is ten times higher than that of commercial graphite anodes. However, when lithium ions diffuse to Si anodes, the volume of Si will expand to almost 400% of its initial size and lead to the crack of Si. Such a huge volume change and crack cause significant capacity loss. Meanwhile, with the crack of Si particles, the conductivity between the electrode and the current collector drops. Moreover, the solid electrolyte interphase (SEI), which is generated during the cycling, reduces the discharge capacity. These issues must be addressed for widespread application of this material. In this work, caramel popcorn shaped porous silicon particles with carbon coating are fabricated by a set of simple chemical methods as active anode material. Si particles are etched to form a porous structure. The pores in Si provide space for the volume expansion and liquid electrolyte diffusion. A layer of amorphous carbon is formed inside the pores, which gives an excellent isolation between the Si particle and electrolyte, so that the formation of the SEI layer is stabilized. Meanwhile, this novel structure enhances the mechanical properties of the Si particles, and the crack phenomenon caused by the volume change is significantly restrained. Therefore, an excellent cycle life under a high rate for the novel Si electrode is achieved. PMID:24111737

  7. Membrane Targeting of P-type ATPases in Plant Cells

    SciTech Connect

    Jeffrey F. Harper, Ph.D.

    2004-06-30

    How membrane proteins are targeted to specific subcellular locations is a very complex and poorly understood area of research. Our long-term goal is to use P-type ATPases (ion pumps), in a model plant system Arabidopsis, as a paradigm to understand how members of a family of closely related membrane proteins can be targeted to different subcellular locations. The research is divided into two specific aims. The first aim is focused on determining the targeting destination of all 10 ACA-type calcium pumps (Arabidopsis Calcium ATPase) in Arabidopsis. ACAs represent a plant specific-subfamily of plasma membrane-type calcium pumps. In contrast to animals, the plant homologs have been found in multiple membrane systems, including the ER (ACA2), tonoplast (ACA4) and plasma membrane (ACA8). Their high degree of similarity provides a unique opportunity to use a comparative approach to delineate the membrane specific targeting information for each pump. One hypothesis to be tested is that an endomembrane located ACA can be re-directed to the plasma membrane by including targeting information from a plasma membrane isoform, ACA8. Our approach is to engineer domain swaps between pumps and monitor the targeting of chimeric proteins in plant cells using a Green Fluorescence Protein (GFP) as a tag. The second aim is to test the hypothesis that heterologous transporters can be engineered into plants and targeted to the plasma membrane by fusing them to a plasma membrane proton pump. As a test case we are evaluating the targeting properties of fusions made between a yeast sodium/proton exchanger (Sod2) and a proton pump (AHA2). This fusion may potentially lead to a new strategy for engineering salt resistant plants. Together these aims are designed to provide fundamental insights into the biogenesis and function of plant cell membrane systems.

  8. Introducing porous silicon as a sacrificial material to obtain cavities in substrate of SOI wafers and a getter material for MEMS devices

    NASA Astrophysics Data System (ADS)

    Mohammad, Wajihuddin

    Microelectromechanical system (MEMS) resonators have been a subject of research for more than four decades. The reason is the huge potential they possess for frequency applications. The use of a MEMS resonator as the timing element has an experimental history and huge progress has been made in this direction. Vacuum encapsulated MEMS resonators are required for high precision frequency control. Hence, a device with a high quality factor and durability is needed. In this effort, a new process for producing a cavity in the substrate of Silicon on insulator (SOI) MEMS devices and augmenting it with a getter using porous silicon is developed. The process involves a mask-less, self-aligned cost effective electrochemical etching process. A 10 mum cavity is introduced in the substrate of SOI dies. This helps in increasing the packaging volume of the SOI resonators along with mitigating the viscous damping effects. The stiction problem in MEMS devices is effectively eliminated and millimeter long slender MEMS structures do not get stuck to the substrate. It also helps in reducing the parasitic capacitance between the device side and the substrate. The porous silicon getter is introduced as a getter material for vacuum encapsulated MEMS devices. This getter needs no external mask and is self-aligned. It requires no external heat or additional materials to operate. The highly reactive porous silicon can readily react with the oxygen gas and form an oxide layer that can trap other gas molecules. This helps in maintaining low pressures in the cavity of the bonded MEMS resonators. A tuning fork resonator with a resonant frequency of 245 kHz was used to realize the benefits of the cavity and the getter. It was observed that the unpackaged device with the cavity in the substrate showed two times better quality factor at different pressures, than the device with no cavity. In order to understand the benefits of porous silicon as a getter, the MEMS devices (one with only a cavity

  9. Material synthesis for silicon integrated-circuit applications using ion implantation

    NASA Astrophysics Data System (ADS)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  10. Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

    NASA Technical Reports Server (NTRS)

    Duffy, M. T.; Berkman, S.; Moss, H. I.; Cullen, G. W.

    1978-01-01

    Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

  11. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

    SciTech Connect

    Zhang, Hongliang; Du, Yingge; Papadogianni, Alexandra; Bierwagen, Oliver; Sallis, Shawn; Piper, Louis F. J.; Bowden, Mark E.; Shutthanandan, V.; Sushko, Petr; Chambers, Scott A.

    2015-09-16

    Transparent conducting oxides (TCOs) constitute a unique class of materials which combine the seemingly mutually exclusive properties of electrical conductivity and optical transparency in a single material. TCOs are useful for a wide range of applications including solar cells, displays, light emitting diodes and transparent electronics. Simple post-transition metal oxides such as ZnO, In2O3 and SnO2 are wide gap insulators in which the ionic character generates an oxygen 2p-derived valence band (VB) and a metal s-derived conduction band (CB), resulting in large optical band gaps (>3.0 eV) and excellent n-type conductivity when donor doped. In contrast, the development of efficient p-type TCOs remains a global materials challenge. Converting n-type oxides to p-type analogs by acceptor doping is extremely difficult and these materials display poor conductivity.

  12. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  13. Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals

    NASA Astrophysics Data System (ADS)

    Lee, In-Ho; Oh, Young Jun; Kim, Sunghyun; Lee, Jooyoung; Chang, K. J.

    2016-06-01

    Lately, the so-called inverse method of materials design has drawn much attention, where specific material properties are initially assigned and target materials are subsequently searched for. Although this method has been successful for some problems, the success of designing complex crystal structures containing many atoms is often limited by the efficiency of the search method utilized. Here we combine the global optimization method of conformational space annealing (CSA) with first-principles quantum calculations and report a new scheme named AMADEUS (Ab initio MAterials DEsign Using cSa). We demonstrate the utility of AMADEUS through the discovery of direct band gap Si crystals. The newly-designed direct gap Si allotropes show excellent optical properties and the spectroscopic limited maximum efficiencies comparable to those of best-known non-silicon photovoltaic materials. Our scheme not only provides a new perspective for the inverse problem of materials design but also may serve as a new tool for the computational design of a wide range of materials.

  14. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  15. Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

    NASA Technical Reports Server (NTRS)

    Culik, J. S.

    1983-01-01

    The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

  16. Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Vivona, M.; Greco, G.; Lo Nigro, R.; Bongiorno, C.; Roccaforte, F.

    2015-07-01

    In this work, the morphological, structural, and electrical properties of Ti/Al/W contacts to p-type implanted silicon carbide (4H-SiC) have been monitored as a function of the annealing temperature (800-1100 °C). The increase of the annealing temperature induces a transition from a rectifying to an Ohmic behavior, with a specific contact resistance of 5.8 × 10-4 Ωcm2. The electrical behavior has been correlated with the morphological and structural analyses. In particular, the transition to an Ohmic behavior was accompanied by a gradual increase of the surface roughness and by the occurrence of a reaction leading to the formation of new phases in the stack and at the interface (TiAl3, W(SiAl)2, and TiC). The presence of Al-rich protrusions penetrating in the SiC substrate was also observed. From the temperature dependence of the electrical parameters, a barrier height of 0.69 eV for this system was determined. The thermal stability of the contacts has been demonstrated for long-term (up to 100 h) thermal cycling at 400 °C.

  17. Picosecond intersubband hole relaxation in p-type quantum wells

    SciTech Connect

    Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.

    1995-12-31

    We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In{sub 0.5}Ga{sub 0.5}As/Al{sub 0.5}Ga{sub 0.5}As periods. The In{sub 0.5}Ga{sub 0.5}As well was 4 nm wide and the Al{sub 0.5}Ga{sub 0.5}As barrier was 8 nm wide. The dopant concentration was 10{sup 19} CM{sup -3} which corresponds to a sheet density of 1.2 x 10{sup 13} CM{sup -2}. The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 {mu}m (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 {mu} m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm{sup 2}). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm{sup 2} and saturates to {approximately}3% with a saturation intensity I{sub sat} of 3 GW/cm{sup 2}. As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements.

  18. Germanium-on-Silicon Strain Engineered Materials for Improved Device Performance Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh Moorkoth

    The primary goal of this research is to develop a chemical vapor deposition process for growing epitaxial films of germanium on silicon (001) substrates with two-dimensional (2-D) morphology, and a low density of threading dislocations. Growth was carried out in a reduced-pressure chemical vapor deposition (RPCVD) system by a two-step growth technique. An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. Residual thermal strain was used to measure the Poisson ratio of Ge films grown on Si(001) substrates, by the sin2Psi method and highresolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared to the bulk value of 0.27. The result was found to be independent of film thickness and defect density, which confirmed that the strain is associated with the elastic response of the film. The study showed that the use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film. The experimentally measured in-plane strain in Ge films was found to be lower than the theoretical calculations based on the differential thermal expansion coefficients of Si and Ge. The mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates was investigated by x-ray diffraction, and transmission electron microscopy. Lattice misfit strain associated with Ge/(001)Si mismatched epitaxy is relieved by a network of Lomer edge misfit dislocations during the first step of the growth technique. However, thermal misfit strain energy during growth is relieved by interdiffusion mechanism at the heterointerface. Two SiGe compositions containing 0.5 and 6.0 atomic percent Si were detected that relieve the thermal mismatch strain associated with the two steps of the growth process. This study discusses the importance of interdiffusion mechanism in relieving small misfit strains

  19. Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Hanes, M. H.; Davis, J. R.; Rohatgi, A.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1981-01-01

    The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

  20. Theory-guided nano-engineering of organic electro-optic materials for hybrid silicon photonic, plasmonic, and metamaterial devices

    NASA Astrophysics Data System (ADS)

    Dalton, Larry R.

    2013-03-01

    Coarse-grained Monte Carlo/molecular dynamic calculations are employed to explore the effect of various of intermolecular electrostatic interactions upon chromophore order, lattice dimensionality, and viscoelasticity in electrically-poled organic second order nonlinear optical materials. The following classes of organic macromolecular materials are considered: (1) Chromophore-polymer composites, (2) chromophores covalently incorporated into polymers and dendrimers, (3) chromophores incorporating additional dipolar or quadrupolar interactions that enhance poling efficiency, and (4) binary chromophore materials. For chromophore-polymer composites, the competition of chromophore-chromophore dipolar interactions and nuclear repulsive (steric) interactions define poling-induced acentric order. For covalently incorporated chromophores, covalent bond potentials also influence poling-induced order. These first two classes of materials basically behave as Langevin (3-D) lattice materials. Dipolar (e.g., coumarin) and quadrupolar (arene-perfluoroarene) interactions act to influence lattice dimensionality and thus enhance poling efficiency (the ratio of electro-optic activity to electric poling field strength). The long-range molecular cooperativity associated with these interactions influences viscoelastic properties critical to material processing and integration into silicon photonic, plasmonic, and metamaterial devices. The interaction between different chromophore species in binary chromophore materials also enhances poling efficiency. Polarized laser radiation applied to certain binary chromophore materials can also be used to enhance poling efficiency through control of lattice dimensionality. Poling efficiency approaching 5 (nm/V)2 has been achieved for these latter two classes of materials. Improvement in poling efficiency and control of material viscosity is particular important for integration of organic materials into complex device structures.

  1. High-resolution solid-state NMR study of the occurrence and thermal transformations of silicon-containing species in biomass materials

    SciTech Connect

    Freitas, J.C.C.; Emmerich, F.G.; Bonagamba, T.J.

    2000-03-01

    The occurrence of silicon in two kinds of biomass (rice hulls and endocarp of babassu coconut) and the thermal transformations taking place in these materials under heat treatments are studied here. The authors report also the production, characterization, and study of carbonaceous materials with high SiC content through the carbothermal reduction of silica, using these natural precursors. X-ray diffraction, scanning electron microscopy, and {sup 13}C and {sup 29}Si room temperature high-resolution solid-state NMR measurements are used in the characterization and study of the materials as well as the process of SiC formation. Important conclusions about the nature of silicon in these types of biomass and the effects of heat treatments on the structure of silicon-containing species are derived from the results presented. It is shown that silicon in these materials occurs in two distinct forms: amorphous hydrated silica and organically bound silicon species. The influence of spin-lattice relaxation dynamics on the NMR spectra is discussed, evidencing the role played by the paramagnetic defects produced in the materials through pyrolysis.

  2. NbFeSb based p-type half-Heusler for power generation applications

    NASA Astrophysics Data System (ADS)

    Joshi, Giri; He, Ran; Engber, Michael; Samsonidze, Georgy; Pantha, Tej; Dahal, Ekraj; Dahal, Keshab; Yang, Jian; Lan, Yucheng; Kozinsky, Boris; Ren, Zhifeng

    2015-03-01

    We report a peak dimensionless figure-of-merit (ZT) of ~1 at 700 oC in nanostructured p-type Nb0.6Ti0.4FeSb0.95Sn0.05composition. Even though the power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is improved by 25% in comparison to the previously reported p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2, the ZT value is not increased due to a higher thermal conductivity. However, the higher power factor of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition led to a 15% increase in power output of a thermoelectric device in comparison to a device made from the previous best material Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. The n-type material used to make the unicouple device is the best reported nanostructured Hf0.25Zr0.75NiSn0.99Sb0.01 composition with the lowest hafnium (Hf) content. Both the p- and n-type nanostructured samples are prepared by ball milling the arc melted ingot and hot pressing the finely ground powders. Moreover, the raw material cost of the Nb0.6Ti0.4FeSb0.95Sn0.05 composition is more than six times lower compared to the cost of the previous best p-type Hf0.44Zr0.44Ti0.12CoSb0.8Sn0.2. This cost reduction is crucial for these materials to be used in large-scale quantities for vehicle and industrial waste heat recovery applications. DOE:DE-EE0004840.

  3. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  4. Two-dimensional silicon-carbon hybrids with a honeycomb lattice: New family for two-dimensional photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jin; Ren, Jun; Fu, HuiXia; Ding, ZiJing; Li, Hui; Meng, Sheng

    2015-10-01

    We predict a series of new two-dimensional (2D) inorganic materials made of silicon and carbon elements (2D Si x C1- x ) based on density functional theory. Our calculations on optimized structure, phonon dispersion, and finite temperature molecular dynamics confirm the stability of 2D Si x C1- x sheets in a two-dimensional, graphene-like, honeycomb lattice. The electronic band gaps vary from zero to 2.5 eV as the ratio x changes in 2D Si x C1- x changes, suggesting a versatile electronic structure in these sheets. Interestingly, among these structures Si0.25C0.75 and Si0.75C0.25 with graphene-like superlattices are semimetals with zero band gap as their π and π* bands cross linearly at the Fermi level. Atomic structural searches based on particle-swarm optimization show that the ordered 2D Si x C1- x structures are energetically favorable. Optical absorption calculations demonstrate that the 2D silicon-carbon hybrid materials have strong photoabsorption in visible light region, which hold promising potential in photovoltaic applications. Such unique electronic and optical properties in 2D Si x C1- x have profound implications in nanoelectronic and photovoltaic device applications.

  5. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    NASA Astrophysics Data System (ADS)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  6. Characteristics of p-type transparent conductive CuCrO2 thin films

    NASA Astrophysics Data System (ADS)

    Yu, Ruei-Sung; Wu, Chung-Ming

    2013-10-01

    Cu-Cr-O films were prepared using reactive magnetron sputtering deposition followed by annealing at temperatures ranging from 550 to 625 °C in 25 °C increments. Correlations between the optoelectronic and microstructural properties of the p-type CuCrO2 films are discussed. The as-deposited film was amorphous; after annealing at 550 and 575 °C, films adopted mixed CuO and CuCr2O4 phases. Annealing at 600 °C led to the formation of a dominant phase of delafossite CuCrO2. The 625 °C-annealed film was single-phase CuCrO2 which had a bar- and polygonal-like mixed surface appearance, with a root mean square roughness of 17.7 nm. CuCrO2 is an intrinsic p-type semiconductor which exhibits electrical conductivity and transparency over the visible wavelength range. Two higher-energy subband transitions at 3.69 and 4.82 eV were observed in the band structure of CuCrO2. Point defects were the main reason source of hole carrier scattering in the material. The single-phase CuCrO2 film had the lowest resistivity of the films, 4.31 Ω cm, and had a direct band gap of 3.14 eV and light transmittance of 62% at 600 nm.

  7. Structural and Thermoelectric Properties of Polycrystalline p-Type Mg2- x Li x Si

    NASA Astrophysics Data System (ADS)

    Nieroda, P.; Kolezynski, A.; Oszajca, M.; Milczarek, J.; Wojciechowski, K. T.

    2016-07-01

    The aim of this study was to determine the location of Li atoms in Mg2Si structure, and verify the influence of Li dopant on the transport properties of obtained thermoelectric materials. The results of theoretical studies of the electronic band structure (full potential linearized augmented plane wave method) in Li-doped Mg2Si are presented. Theoretical calculations indicate that only in the case when Li is located in the Mg position, the samples will have p-type conduction. To confirm the theoretical predictions, a series of samples with nominal composition Mg2- x Li x Si ( x = 0-0.5) were prepared using the spark plasma sintering (SPS) method. Structural and phase composition analyses were carried out by x-ray and neutron powder diffraction, as well as scanning electron microscopy. Neutron diffraction studies confirmed that the lithium atoms substitute magnesium in the Mg2Si structure. The investigations of the influence of Li dopant on the transport properties, i.e. electrical conductivity, the Seebeck coefficient and the thermal conductivity, were carried out in a temperature range from 340 K to 720 K. Carrier concentration was measured with Hall method. The positive values of the Seebeck coefficient and Hall coefficient indicate that all examined samples show p-type conductivity. On the basis of the experimental data, the temperature dependencies of the thermoelectric figure of merit ZT were calculated.

  8. p-Type polymer-hybridized high-performance piezoelectric nanogenerators.

    PubMed

    Lee, Keun Young; Kumar, Brijesh; Seo, Ju-Seok; Kim, Kwon-Ho; Sohn, Jung Inn; Cha, Seung Nam; Choi, Dukhyun; Wang, Zhong Lin; Kim, Sang-Woo

    2012-04-11

    Enhancing the output power of a nanogenerator is essential in applications as a sustainable power source for wireless sensors and microelectronics. We report here a novel approach that greatly enhances piezoelectric power generation by introducing a p-type polymer layer on a piezoelectric semiconducting thin film. Holes at the film surface greatly reduce the piezoelectric potential screening effect caused by free electrons in a piezoelectric semiconducting material. Furthermore, additional carriers from a conducting polymer and a shift in the Fermi level help in increasing the power output. Poly(3-hexylthiophene) (P3HT) was used as a p-type polymer on piezoelectric semiconducting zinc oxide (ZnO) thin film, and phenyl-C(61)-butyric acid methyl ester (PCBM) was added to P3HT to improve carrier transport. The ZnO/P3HT:PCBM-assembled piezoelectric power generator demonstrated 18-fold enhancement in the output voltage and tripled the current, relative to a power generator with ZnO only at a strain of 0.068%. The overall output power density exceeded 0.88 W/cm(3), and the average power conversion efficiency was up to 18%. This high power generation enabled red, green, and blue light-emitting diodes to turn on after only tens of times bending the generator. This approach offers a breakthrough in realizing a high-performance flexible piezoelectric energy harvester for self-powered electronics. PMID:22409420

  9. Propagation of electromagnetic waves through a multilayered structure containing diamond-like carbon, porous silicon, and left-handed material

    NASA Astrophysics Data System (ADS)

    Shabat, Mohammed M.; Ubeid, Muin F.; Altanany, Sameh M.

    2016-05-01

    In this work, reflection and transmission of electromagnetic wave through a multilayered structure containing diamond-like carbon, porous silicon, and left-handed material (LHM) are investigated theoretically and numerically. The mentioned materials are described, and their main parameters are given in detail. After the construction of the problem, the reflection and transmission coefficients are derived in a closed form by a transfer matrix method. The reflected and transmitted powers of the structure are calculated using these coefficients. In the numerical results, the mentioned powers are computed and illustrated as a function of frequency, angle of incidence, and slabs thickness, when the damping coefficient of the LHM changes. The results obtained may be useful to the researchers and designer working in the area solar cells.

  10. Grafting Poly(3-hexylthiophene) from Silicon Nanocrystal Surfaces: Synthesis and Properties of a Functional Hybrid Material with Direct Interfacial Contact.

    PubMed

    Islam, Muhammad Amirul; Purkait, Tapas K; Mobarok, Md Hosnay; Hoehlein, Ignaz M D; Sinelnikov, Regina; Iqbal, Muhammad; Azulay, Doron; Balberg, Isaac; Millo, Oded; Rieger, Bernhard; Veinot, Jonathan G C

    2016-06-20

    Hybrid functional materials (HFMs) comprised of semiconductor nanoparticles and conjugated polymers offer the potential of synergetic photophysical properties. We have developed HFMs based upon silicon nanocrystals (SiNCs) and the conductive polymer poly(3-hexylthiophene) (SiNC@P3HT) by applying surface-initiated Kumada catalyst transfer polycondensation (SI-KCTP). One unique characteristic of the developed SiNC@P3HT is the formation of a direct covalent bonding between SiNCs and P3HT. The presented method for obtaining direct interfacial attachment, which is not accessible using other methods, may allow for the development of materials with efficient electronic communication at the donor-acceptor interfaces. Systematic characterization provides evidence of a core-shell structure, enhanced interfacial electron and/or energy transfer between the P3HT and SiNC components, as well as formation of a type-II heterostructure. PMID:27144670

  11. Mechanical Properties of Silicone Rubber Acoustic Lens Material Doped with Fine Zinc Oxide Powders for Ultrasonic Medical Probe

    NASA Astrophysics Data System (ADS)

    Yamamoto, Noriko; Yohachi; Yamashita; Itsumi, Kazuhiro

    2009-07-01

    The mechanical properties of high-temperature-vulcanization silicone (Q) rubber doped with zinc oxide (ZnO) fine powders have been investigated to develop an acoustic lens material with high reliability. The ZnO-doped Q rubber with an acoustic impedance (Z) of 1.46×106 kg·m-2·s-1 showed a tear strength of 43 N/mm and an elongation of 560%. These mechanical property values were about 3 times higher than those of conventional acoustic Q lens materials. The ZnO-doped Q rubbers also showed a lower abrasion loss. These superior characteristics are attributable to the microstructure with fewer origins of breaks; few pores and spherical fine ZnO powder. The high mechanical properties of ZnO-doped Q rubber acoustic lenses enable higher performance during long-life and safe operation during diagnosis using medical array probe applications.

  12. Modeling the mechanical and aging properties of silicone rubber and foam - stockpile-historical & additively manufactured materials

    SciTech Connect

    Maiti, A.; Weisgraber, T. H.; Gee, R. H.

    2014-09-30

    M97* and M9763 belong to the M97xx series of cellular silicone materials that have been deployed as stress cushions in some of the LLNL systems. Their purpose of these support foams is to distribute the stress between adjacent components, maintain relative positioning of various components, and mitigate the effects of component size variation due to manufacturing and temperature changes. In service these materials are subjected to a continuous compressive strain over long periods of time. In order to ensure their effectiveness, it is important to understand how their mechanical properties change over time. The properties we are primarily concerned about are: compression set, load retention, and stress-strain response (modulus).

  13. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  14. The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

    NASA Technical Reports Server (NTRS)

    Raag, V.

    1975-01-01

    Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

  15. A silicon nanowire-reduced graphene oxide composite as a high-performance lithium ion battery anode material

    NASA Astrophysics Data System (ADS)

    Ren, Jian-Guo; Wang, Chundong; Wu, Qi-Hui; Liu, Xiang; Yang, Yang; He, Lifang; Zhang, Wenjun

    2014-02-01

    Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g-1. Due to its [111] growth direction and the large contact area with rGO, the Si NWs in the composite show substantially enhanced reaction kinetics compared with other Si NWs or Si particles.Toward the increasing demands of portable energy storage and electric vehicle applications, silicon has been emerging as a promising anode material for lithium-ion batteries (LIBs) owing to its high specific capacity. However, serious pulverization of bulk silicon during cycling limits its cycle life. Herein, we report a novel hierarchical Si nanowire (Si NW)-reduced graphene oxide (rGO) composite fabricated using a solvothermal method followed by a chemical vapor deposition process. In the composite, the uniform-sized [111]-oriented Si NWs are well dispersed on the rGO surface and in between rGO sheets. The flexible rGO enables us to maintain the structural integrity and to provide a continuous conductive network of the electrode, which results in over 100 cycles serving as an anode in half cells at a high lithium storage capacity of 2300 mA h g-1. Due to its [111] growth direction and the large contact area with rGO, the Si NWs in

  16. Material properties of low pressure chemical vapor deposited silicon nitride for modeling and calibrating the simulation of advanced isolation structures

    NASA Astrophysics Data System (ADS)

    Smeys, Peter I. L.; Griffin, Peter B.; Saraswat, Krishna C.

    1995-08-01

    The increasing cost and complexity of semiconductor process development has lead to the widespread use of multidimensional semiconductor process simulators. The success of a program like SUPREM-IV is primarily due to the fact that it is based on physical models, rather than empirical equations. This is in contrast to the first generation of process simulators, which calculated impurity profiles and oxide thickness in one dimension based on semiempirical approaches. SUPREM-IV incorporates two-dimensional coupled stress-dependent oxidation and impurity diffusion, which allows the accurate simulations of state-of-the-art integrated processes, provided that accurate model parameter sets are available. In this article we present an improved calibration methodology for simulation of advanced isolation technologies using SUPREM-IV, based on the experimental determination of the material properties of silicon nitride. The proposed strategy is applicable not only to SUPREM-IV but to any numerical simulator that uses the stress-dependent oxidation models to calculate oxide growth. In order to simulate experimental isolation boundary shapes, the oxidation models in SUPREM-IV must be calibrated. This requires a set of five fitting parameters, i.e., the material viscosities and activation volumes for stress-dependent diffusion, reaction rate, and critical stress. These parameters form a quintuplet but are not unique. Multiplying the viscosity values and dividing the activation volumes by a constant will yield exactly the same isolation structure boundary shape. The calculated stresses in the substrate however do not remain constant when different quintuplets are used. This has serious implications since isolation structures require the stress levels in the silicon substrate to remain well below the yield stress of silicon. If a nonoptimal parameter set is used, incorrect designs will result. Based on the experimental extraction of the silicon nitride viscosity by measuring the

  17. Electrical creation of spin polarization in silicon at room temperature

    NASA Astrophysics Data System (ADS)

    Jansen, Ron

    2010-03-01

    The integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is the implementation of spin-based electronic functionality in silicon devices. Much of the interest in silicon derives from its prevalence in semiconductor technology and from the robustness and longevity of spin as it is only weakly coupled to other degrees of freedom in the material. Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (GaAs and Si) using all-electrical structures, but so far at temperatures below 150 K and only in n-type material. The main challenges are: (i) to design fully electrical silicon-based spintronic devices with large spin signals, (ii) to demonstrate device operation at room temperature, (iii) to do so for n-type and p-type material, and (iv) to find ways to manipulate spins and spin flow with a gate electric field. After a brief overview of the state of affairs, our recent advances in these areas are described. In particular, we demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect, and the electrical detection of the induced spin accumulation. It is shown that a spin splitting as large as 2.9 meV can be created in Si at room temperature, corresponding to an electron spin polarization of 4.6%. The results open the way to the implementation of spin functionality in complementary silicon devices and electronic circuits operating at ambient temperature, and to the exploration of their prospects as well as the fundamental rules that govern their behavior. [4pt] [1] S.P. Dash, S. Sharma, R.S. Patel, M.P. de Jong and R. Jansen, Nature 462, 491 (2009).

  18. Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, LSSA project

    NASA Technical Reports Server (NTRS)

    Duffy, M. T.; Berkman, S.; Cullen, G. W.; Moss, H. I.

    1977-01-01

    Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si3N4, and SiOxNy. Silicon nitride layers, deposited with NH3:SiH4 ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N4 near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si3N4. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.

  19. Surface modification of silicone medical materials by plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Kobayashi, Tomohiro; Yokota, Toshihiko; Kato, Rui; Suzuki, Yoshiaki; Iwaki, Masaya; Terai, Takayuki; Takahashi, Noriyoshi; Miyasato, Tomonori; Ujiie, Hiroshi

    2007-04-01

    Silicone (polydimethylsiloxane) sheets and tubes for medical use were irradiated with inert gas ions using plasma-based ion implantation (PBII). The affinity of the surface with tissue examined by an animal test was improved by the irradiation at optimal conditions. The cell attachment percentage increased at an applied voltage of less than -7.5 kV; however, it decreased at higher voltage. The specimens irradiated at higher voltages were more hydrophobic than unirradiated specimens. The surface became rough with increasing voltage and textures, and small domains appeared. This effect was caused by different etching speeds in the amorphous and crystalline areas.

  20. Silicon materials task of the low cost solar array project. Phase 3: Effect of impurities and processing on silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.; Davis, J. R.; Blais, P. D.; Rohatgi, A.; Campbell, R. B.; Rai-Choudhury, P.; Mollenkopf, H. C.; Mccormick, J. R.

    1979-01-01

    The 13th quarterly report of a study entitled an Investigation of the Effects of Impurities and Processing on Silicon Solar Cells is given. The objective of the program is to define the effects of impurities, various thermochemical processes and any impurity-process interactions on the performance of terrestrial silicon solar cells. The Phase 3 program effort falls in five areas: (1) cell processing studies; (2) completion of the data base and impurity-performance modeling for n-base cells; (3) extension of p-base studies to include contaminants likely to be introduced during silicon production, refining or crystal growth; (4) anisotropy effects; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells. The quarterly activities for this report focus on tasks (1), (3) and (4).