Science.gov

Sample records for pemercepat elektron mbe

  1. Pulser development for MBE-4

    SciTech Connect

    Gough, D.E.; Brodzik, D.A.

    1986-06-01

    The Multiple Beam Experiment MBE4 is designed to accelerate four cesium ion beams from 200 kV to about 1 MV using an induction linac and to demonstrate the process of current amplification simultaneously with acceleration. The injected beam is obtained from a source using a Marx generator providing typically 10 mA/beam with a length of 1.6 meters. This is equivalent to a beam duration time of about 3 ..mu..sec. Twenty four acceleration gaps in groups of four are distributed along the length of the machine which will be some 16 meters long when completed. Each group of four acceleration gaps with appropriate quadrupoles form one section of the machine, identified as A through F. Careful tailoring of the acceleration voltage waveforms at each gap is required to accelerate the beam, amplify the current and provide longitudinal focusing. Ideal voltage waveforms for each gap were generated for a gap voltage limit initially set at 30 kV. These waveforms are shown in Fig. 1. The waveforms for the first 4 gaps are triangular with an approximate width of 3 ..mu..sec, becoming flatter and shorter at subsequent gaps as the beam bunch velocity increases. Ninety two nickel-iron tape wound cores capable of 6.8 mVsec/core and twenty six silicon steel tape wound cores capable of 24 mVsec/core were available. Groups of cores at the first eight gaps have been used in conjunction with an appropriate number of pulsers to provide the necessary accelerating voltage waveforms together with the pulser waveforms at every fourth acceleration gap which provides the longitudinal focusing of the beam. This paper will deal with the performance of the pulsers for the first eight gaps of acceleration and expectations for the next four, currently under construction.

  2. [Russian oxygen generation system "Elektron-VM": hydrogen content in electrolytically produced oxygen for breathing by International Space Station crews].

    PubMed

    Proshkin, V Yu; Kurmazenko, E A

    2014-01-01

    The article presents the particulars of hydrogen content in electrolysis oxygen produced aboard the ISS Russian segment by oxygen generator "Elektron-VM" (SGK) for crew breathing. Hydrogen content was estimated as in the course of SGK operation in the ISS RS, so during the ground life tests. According to the investigation of hydrogen sources, the primary path of H2 appearance in oxygen is its diffusion through the porous diaphragm separating the electrolytic-cell cathode and anode chambers. Effectiveness of hydrogen oxidation in the SGK reheating unit was evaluated. PMID:25035898

  3. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  4. Fabrication of photovoltaic laser energy converterby MBE

    NASA Technical Reports Server (NTRS)

    Lu, Hamilton; Wang, Scott; Chan, W. S.

    1993-01-01

    A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special high-temperature electron-beam (e-beam) sources were developed especially for the MBE growth of the junctions and CoSi2 layers. Making use of the small (greater than 1.2 percent) lattice mismatch between CoSi2 and Si layers, high-quality and pinhole-free epilayers were achieved, providing a capability of fabricating all the junctions and connecting layers as a single growth process with one pumpdown. Well-defined multiple p-n junctions connected by CoSi2 layers were accomplished by employing a low growth temperature (greater than 700 C) and a low growth rate (less than 0.5 microns/hour). Producing negligible interdiffusion, the low growth temperature and rate also produced negligible pinholes in the CoSi2 layers. For the first time, a stack of three p-n junctions connected by two 10(exp -5) Ohm-cm CoSi2 layers was achieved, meeting the high conversion efficiency requirement. This process can now be optimized for high growth rate to form a practical converter with 10 p-n junctions in the stack.

  5. 50. VIEW TO EAST; SOUTH END OF MBE BUILDING, FIRST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    50. VIEW TO EAST; SOUTH END OF MBE BUILDING, FIRST FLOOR; SAFE, DOOR OPEN ELECTRONIC FLASH INTERIOR ILLUMINATION (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  6. 15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND SECOND FLOORS; GASOLINE PUMPS CENTER (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  7. 51. VIEW TO SOUTHWEST; SOUTH END OF MBE BUILDING, SECOND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    51. VIEW TO SOUTHWEST; SOUTH END OF MBE BUILDING, SECOND FLOOR; MAIN ENTRANCE TO FORMER REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  8. 39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, FRED HARVEY NEWSSTAND STOREROOM (AREA BURNED BY VANDALS) (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  9. 54. VIEW TO SOUTH; SOUTH END OF MBE BUILDING, THIRD ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    54. VIEW TO SOUTH; SOUTH END OF MBE BUILDING, THIRD FLOOR, HALLWAY AND DOOR TO FORMER REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  10. 40 CFR 33.209 - Can EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 1 2011-07-01 2011-07-01 false Can EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE? 33.209 Section 33.209 Protection of... EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE? (a)...

  11. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... performing a commercially useful function: (1) The MBE or WBE must be responsible for the management...

  12. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... performing a commercially useful function: (1) The MBE or WBE must be responsible for the management...

  13. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... performing a commercially useful function: (1) The MBE or WBE must be responsible for the management...

  14. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... performing a commercially useful function: (1) The MBE or WBE must be responsible for the management...

  15. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  16. Let the Questions Be Your Guide: MBE as Interdisciplinary Science

    ERIC Educational Resources Information Center

    Rose, L. Todd; Daley, Samantha G.; Rose, David H.

    2011-01-01

    From its inception, the field of Mind, Brain, and Education (MBE) has been conceived as an interdisciplinary science, and with good reason: The phenomena the field aims to understand often arise from interactions among multiple factors, span levels of analysis, and are context dependent. In this article, we argue that to reach its potential as an…

  17. 47. VIEW TO WEST; SOUTH END OF MBE BUILDING, FIRST ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    47. VIEW TO WEST; SOUTH END OF MBE BUILDING, FIRST FLOOR; FORMER PACKAGE HANDLING AREA ADJACENT TO FORMER PACIFIC ELECTRIC RAILWAY TERMINAL (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  18. 52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND FLOOR; HIGHLY ALTERED INTERIOR OFFICE SPACE, FORMERLY REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  19. 53. VIEW TO SOUTHEAST; SOUTH END OF MBE BUILDING, SECOND ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    53. VIEW TO SOUTHEAST; SOUTH END OF MBE BUILDING, SECOND FLOOR; HIGHLY ALTERED INTERIOR OFFICE SPACE, FORMERLY REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  20. MBE of wide bandgap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kobayashi, M.; Kolodziejski, L. A.; Otsuka, N.; Nurmikko, A. V.

    1990-01-01

    A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit two-dimensional electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

  1. Preface of the 18th International Conference on Molecular Beam Epitaxy (MBE 2014)

    NASA Astrophysics Data System (ADS)

    Brown, April S.; Ptak, Aaron J.

    2015-09-01

    The first International Conference on Molecular Beam Epitaxy (IC-MBE) was held in Paris in 1978, chaired by Alfred Y. Cho. Every other year since, with the exception of a four-year break after the initial meeting, the IC-MBE has been held in European, Asian, and North American venues. The 18th and latest IC-MBE was held in Flagstaff, Arizona, USA, September 7-12, 2014, and was chaired by Yong-Hang Zhang (Arizona State University). MBE is an advanced crystal growth method that benefits areas from the study of fundamental physics, all the way through the production of devices used in countless fields. IC-MBE brings together researchers from all over the world, and is the premier forum for scientific and technological exchange among researchers investigating all types of materials growth using the MBE technique.

  2. Evidence for void formation in MBE-grown silicon

    SciTech Connect

    Simpson, P.J.; Schultz, P.J. . Dept. of Physics Ontario Centre for Materials Research, Kingston, ON ); Jackman, T.E.; Aers, G.C.; Noeel, J.; Houghton, D.C. ); Perovic, D.D.; Weatherly, G.C. )

    1991-02-01

    In this paper, the authors give evidence for reproducible formation of voids of 3 to 6 nm diameter in (100) silicon epilayers, which were grown using molecular beam epitaxy (MBE) method in a narrow temperature range below 260 {degree}C. The results are given of an experimental investigation using variable-energy positrons and transmission electron microscopy (TEM). The expression used for the positron range, derived from work done below 10 keV, appears to be inaccurate when extrapolated to higher energy. (AIP)

  3. 40 CFR 33.211 - What is the process for appealing or challenging an EPA MBE or WBE certification determination?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... challenging an EPA MBE or WBE certification determination? 33.211 Section 33.211 Protection of Environment... process for appealing or challenging an EPA MBE or WBE certification determination? (a) An entity which has been denied MBE or WBE certification by EPA OSDBU under § 33.205 or § 33.209 may appeal...

  4. 40 CFR 33.407 - How long do MBE and WBE fair share objectives remain in effect?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false How long do MBE and WBE fair share... ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Fair Share Objectives § 33.407 How long do MBE and WBE fair share objectives remain in effect? Once MBE and WBE fair share objectives have been negotiated, they will remain...

  5. Transverse combining of 4 beams in MBE-4

    SciTech Connect

    Celata, C.M.; Chupp, W.; Faltens, A.; Fawley, W.M.; Ghiorso, W.; Hahn, K.D.; Henestroza, E.; Peters, C.; Seidl, P.

    1995-05-01

    Transverse beam combining is a cost-saving optio employed in many designs for induction linac heavy ion fusion drivers. But resultant transverse emittance increase, due predominantly to anharmonic space charoe forces, must be kept minimal so as not to sacrifice focusability at the target. A prototype combining experiment has been built, using the MBE-4 experiment. Four sources produce four 4 mA Cs{sup +} beams at 200 keV. The ion sources are angled toward each other, so that beams converge. Focusing upstream of the merge consists of 4 quadrupoles and a final combined-function element (quadrupole & dipole). All lattice elements are electrostatic. Due to the small distance between beams at the last element ({approximately} 2 mm), the electrodes here are a cage of small wires, each at different voltage. The beams emerge into the 30 period transport lattice of MBE-4 where emittance growth due to merging, as well as the subsequent evolution of the distribution function, can be diagnosed. The combiner design, simulation predictions, and preliminary results from the experiment are presented.

  6. Characterization of MBE-grown Semiconductor Materials for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Tang, Dinghao

    The research described in this dissertation involved the use of transmission electron microscopy (TEM) to characterize II-VI and III-V compound semiconductor quantum dots (QDs) and dilute-nitride alloys grown by molecular beam epitaxy (MBE) and intended for photovoltaic applications. The morphology of CdTe QDs prepared by the post-annealing MBE method were characterized by various microscopy techniques including high-resolution transmission electron microscopy (HR-TEM), and high-angle annular-dark-field scanning transmission electron microscopy (HAADF-STEM). Extensive observations revealed that the of QD shapes were not well-defined, and the QD size and spatial distribution were not determined by the amount of CdTe deposition. These results indicated that the formation of II-VI QDs using a post-annealing treatment did not follow the conventional growth mechanism for III-V and IV-IV materials. The structural properties of dilute-nitride GaAsNx films grown using plasma-assisted MBE were characterized by TEM and HAADF-STEM. A significant amount of the nitrogen incorporated into the dilute nitride films was found to be interstitial, and that fluctuations in local nitrogen composition also occurred during growth. Post-growth partial relaxation of strain resulted in the formation of {110}-oriented microcracks in the sample with the largest substitutional nitrogen composition. Single- and multi-layered InAs QDs grown on GaAsSb/GaAs composite substrates were investigated using HR-TEM and HAADF-STEM. Correlation between the structural and optoelectronic properties revealed that the GaAsSb barrier layers had played an important role in tuning the energy-band alignments but without affecting the overall structural morphology. However, according to both XRD measurement and electron microscopy the densities of dislocations increased as the number of QD layers built up. An investigation of near-wetting layer-free InAs QDs incorporated with AlAs/GaAs spacer layers was carried out

  7. Molecular Beam Epitaxial (MBE) Growth and Characterization of Thin Films of Semiconductor Tin

    NASA Astrophysics Data System (ADS)

    Folkes, P.; Taylor, P.; Rong, C.; Nichols, B.; Hier, H.; Burke, R.; Neupane, M.

    Recent theoretical predictions that a two-dimensional monolayer of semiconductor tin is a two-dimensional topological insulator and experimental evidence of three-dimensional topological insulator behavior in strained ultrathin films of semiconductor tin grown by MBE on InSb has generated intense research interest. This research is primarily focused on the MBE growth and topological characteristics of ultrathin films of semiconductor tin. In this talk we present results of a study on the MBE growth and the transport, structural and optical characterization of thin films of semiconductor tin on several different substrates.

  8. MBE-4, a heavy ion multiple-beam experiment

    SciTech Connect

    Avery, R.T.; Chavis, C.S.; Fessenden, T.J.; Gough, D.E.; Henderson, T.F.; Keefe, D.; Meneghetti, J.R.; Pike, C.D.; Vanecek, D.L.; Warwick, A.I.

    1985-05-01

    MBE-4, a heavy-ion multiple beam induction linac being built at LBL in FY85/86, will model many features of a much longer device. It will accelerate four space-charge-dominated cesium ion beams from, for example, 0.2 MeV, 5 mA/beam, 3.0 ..mu..sec, 1.6 m length at injection to approx.0.8 MeV, 15 mA/beam, 1.0 ..mu..sec, 1.1 m length at the exit. It will permit study of simultaneous focussing, acceleration, current amplification and emittance growth of multiple space-charge-dominated ion beams. Some features of this accelerator are described. 11 refs., 5 figs.

  9. MBE grown high quality GaN films and devices

    NASA Astrophysics Data System (ADS)

    Kim, W.; Aktas, O.; Salvador, A.; Botchkarev, A.; Sverdlov, B.; Mohammad, S. N.; Morkoç, H.

    1997-02-01

    GaN films with much improved structural, transport, and optical properties have been prepared by molecular beam epitaxy using NH 3 as a nitrogen source. Films with a wide range of resistivity, including highly resistive ones, were grown with a chosen growth rate of 1.2 μm/h. The electron mobility in modulation doped structures is about 450 and 850 cm 2/Vs at 300 and 77 K, respectively, with an areal carrier concentration of about 10 13 cm -2. Low temperature luminescence shows A- and B-free-excitons as well as the excited state of the A- and B-excitons, the first known observation, attesting to the quality of the samples. These transition energies are consistent with the best MOCVD samples and represent a sizable reduction of the pandemic zincblende phase in MBE grown films. The high quality of films was demonstrated by the realization of high performance MODFETs and Schottky diodes.

  10. MBE growth and magneto-optic properties of magnetic multilayers

    NASA Astrophysics Data System (ADS)

    Falco, Charles M.; Engel, Brad N.

    Recent interest in the magnetic and magneto-optic properties of transition metal/transition metal multilayers has been stimulated by the discovery of perpendicular magnetism in particular systems such as Co/Pd and Co/Pt. Due to their favorable magneto-optic wavelength dependence and enhanced corrosion resistance, these materials show promise as future data storage media. However, partially due to the large variety of thin-film deposition methods and growth conditions, it has been difficult to obtain a clear understanding of the mechanisms of magnetic anisotropy in these systems. In order to create controlled and well characterized model systems, we have grown a series of epitaxial Co/Pd superlattices oriented along the three high-symmetry crystal directions [001], [110], and [111] on single-crystal GaAs substrates by molecular beam epitaxy [MBE]. Simultaneously, we have deposited polycrystalline Co/Pd multilayers on Si substrates mounted alongside the GaAs for direct comparisons of epitaxial and non-epitaxial films produced under identical conditions. The structural properties of these multilayers were determined by low-and reflection high-energy electron diffraction (LEED and RHEED), low- and high-angle X-ray diffraction, and scanning tunneling microscopy (STM). The dependence of the uniaxial magnetic anisotropy energy on the Co thickness in these superlattices showed significant systematic differences for each of the three crystal orientations. A review of our work on the structural influences responsible for these differences is presented.

  11. 40 CFR 33.209 - Can EPA re-evaluate the MBE or WBE status of an entity after EPA certifies it to be an MBE or WBE?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Can EPA re-evaluate the MBE or WBE... Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Certification § 33.209...

  12. Multiband spectral emitters matched to MBE grown photovoltaic cells

    SciTech Connect

    Wong, E.M.; Hickey, J.P.; Holmquist, G.A.; Uppal, P.N.; Waldman, C.H.

    1996-02-01

    Clearly TPV devices are of considerable interest for power generation. For practical devices it is desirable to have high efficiencies combined with low temperature operation. Photovoltaic cells which can convert the energy at the longer wavelengths of interest are needed to complete such a system. The spectral emission peak of Yb{sub 2}O{sub 3} is well matched to the band gap of Si; however, the longer wavelength, spectral emissions of other rare earth oxides can also be exploited through the use of III{endash}V semiconductor compounds such as GaSb or alloys of GaInAsSb. By doping GaSb with InAs, the band gap of the resulting material can be effectively varied depending upon the concentration of InAs in the quaternary alloy. The ability to tailor the emitter materials and, in conjunction, the photovoltaic materials leads to greater efficiencies through spectral matching. Two binary rare earth oxide combinations, Er{sub 2}O{sub 3}/Ho{sub 2}O{sub 3} and Er{sub 2}O{sub 3}/Yb{sub 2}O{sub 3}, were studied. The mixtures were found to give multiple peak spectral emission in the wavelengths of interest. The intensity of the peaks were compositionally dependent though it did not vary in a linear fashion. Photon efficiencies of the molecular beam epitaxially (MBE) grown GaSb cell and GaInAsSb quaternary cell were measured when used in conjunction with the Er{sub 2}O{sub 3}/Ho{sub 2}O{sub 3} emitters in which the concentration of Er{sub 2}O{sub 3} and Ho{sub 2}O{sub 3} were varied. The results demonstrated promise for further work. {copyright} {ital 1996 American Institute of Physics.}

  13. 40 CFR 33.503 - How does a recipient calculate MBE and WBE participation for reporting purposes?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... attributable to the MBE or WBE. If an MBE's or WBE's risk of loss, control or management responsibilities is... ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS... consistent with normal business practices. (1) Presumption. If 50% or more of the total dollar amount of...

  14. 40 CFR 33.208 - How long does an MBE or WBE certification from EPA last?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false How long does an MBE or WBE certification from EPA last? 33.208 Section 33.208 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED...

  15. 40 CFR 33.207 - Can an entity reapply to EPA for MBE or WBE certification?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Can an entity reapply to EPA for MBE or WBE certification? 33.207 Section 33.207 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED...

  16. Performance of MBE-4: An experimental multiple beam induction linear accelerator for heavy ions

    SciTech Connect

    Warwick, A.I.; Fessenden, T.J.; Keefe, D.; Kim, C.H.; Meuth, H.

    1988-06-01

    An experimental induction linac, called MBE-4, has been constructed to demonstrate acceleration and current amplification of multiple heavy ion beams. This work is part of a program to study the use of such an accelerator as a driver for heavy ion inertial fusion. MBE-4 is 16m long and accelerates four space-charge-dominated beams of singly-charged cesium ions, in this case from 200 keV to 700 keV, amplifying the current in each beam from 10mA by a factor of nine. Construction of the experiment was completed late in 1987 and we present the results of detailed measurements of the longitudinal beam dynamics. Of particular interest is the contribution of acceleration errors to the growth of current fluctuations and to the longitudinal emittance. The effectiveness of the longitudinal focusing, accomplished by means of the controlled time dependence of the accelerating fields, is also discussed. 4 refs., 5 figs., 1 tab.

  17. Large format MBE HgCdTe on silicon detector development for astronomy

    NASA Astrophysics Data System (ADS)

    Hanold, Brandon J.; Figer, Donald F.; Lee, Joong; Kolb, Kimberly; Marcuson, Iain; Corrales, Elizabeth; Getty, Jonathan; Mears, Lynn

    2015-08-01

    The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5μm cutoff MBE HgCdTe/Si detectors including pre- and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

  18. Growth of III-V films by control of MBE growth front stoichiometry

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

  19. Application of modern control theory to temperature control of the MBE system

    NASA Astrophysics Data System (ADS)

    Ishikawa, Takuya; Chan, Yuen Chuen; Nakano, Yoshiaki; Tada, Kunio

    1990-03-01

    The setup of an MBE control system without PID controllers, whereby one microprocessor manages all the Knudsen cells directly, is reported. The model-following algorithm is applied to the temperature control of the Knudsen cells, and improved dynamic response of the cell temperature is obtained compared with that obtained by the conventional PID algorithm. An application of the model-following algorithm to device fabrication is demonstrated.

  20. New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

    NASA Technical Reports Server (NTRS)

    1988-01-01

    A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

  1. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  2. Recent progress in MBE grown HgCdTe materials and devices at UWA

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

    2016-05-01

    HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

  3. Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?

    NASA Astrophysics Data System (ADS)

    Garland, James W.; Grein, Christoph; Sivananthan, Sivalingam

    2013-11-01

    The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p- n junctions and low Shockley-Read-Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30 years by the HgCdTe molecular beam epitaxial (MBE) growth community, but remains elusive. On the other hand, n-doping with In avoids the short τ SRH characteristic of arsenic-doped MBE-grown HgCdTe and is well controlled, stable, and reproducibly 100% activated as-grown. However, as discussed herein, because of inherent limitations of n-doped absorber layers, overcoming the challenges of successfully p-doping HgCdTe remains an important problem, especially for long-wavelength infrared detectors. We briefly review the achievements that have been made in p-doping HgCdTe, point out the reasons why achieving well-controlled, reproducibly p-doped MBE-grown HgCdTe with a lifetime τ not limited by τ SRH remains a very important task, discuss the probable origin of the short τ SRH in MBE-grown HgCdTe, and discuss possible ways to achieve much longer values of τ SRH in MBE-grown p-doped HgCdTe.

  4. Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE

    NASA Astrophysics Data System (ADS)

    Gardner, Geoffrey C.; Fallahi, Saeed; Watson, John D.; Manfra, Michael J.

    2016-05-01

    We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility μ in excess of 35×106 cm2/V s at density n=3.0×1011/cm2 and μ=18×106 cm2/V s at n=1.1×1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting μ<40×106 cm2/V s. We describe strategies to overcome this limitation.

  5. MBE based HgCdTe APDs and 3D LADAR sensors

    NASA Astrophysics Data System (ADS)

    Jack, Michael; Asbrock, Jim; Bailey, Steven; Baley, Diane; Chapman, George; Crawford, Gina; Drafahl, Betsy; Herrin, Eileen; Kvaas, Robert; McKeag, William; Randall, Valerie; De Lyon, Terry; Hunter, Andy; Jensen, John; Roberts, Tom; Trotta, Patrick; Cook, T. Dean

    2007-04-01

    Raytheon is developing HgCdTe APD arrays and sensor chip assemblies (SCAs) for scanning and staring LADAR systems. The nonlinear characteristics of APDs operating in moderate gain mode place severe requirements on layer thickness and doping uniformity as well as defect density. MBE based HgCdTe APD arrays, engineered for high performance, meet the stringent requirements of low defects, excellent uniformity and reproducibility. In situ controls for alloy composition and substrate temperature have been implemented at HRL, LLC and Raytheon Vision Systems and enable consistent run to run results. The novel epitaxial designed using separate absorption-multiplication (SAM) architectures enables the realization of the unique advantages of HgCdTe including: tunable wavelength, low-noise, high-fill factor, low-crosstalk, and ambient operation. Focal planes built by integrating MBE detectors arrays processed in a 2 x 128 format have been integrated with 2 x 128 scanning ROIC designed. The ROIC reports both range and intensity and can detect multiple laser returns with each pixel autonomously reporting the return. FPAs show exceptionally good bias uniformity <1% at an average gain of 10. Recent breakthrough in device design has resulted in APDs operating at 300K with essentially no excess noise to gains in excess of 100, low NEP <1nW and GHz bandwidth. 3D LADAR sensors utilizing these FPAs have been integrated and demonstrated both at Raytheon Missile Systems and Naval Air Warfare Center Weapons Division at China Lake. Excellent spatial and range resolution has been achieved with 3D imagery demonstrated both at short range and long range. Ongoing development under an Air Force Sponsored MANTECH program of high performance HgCdTe MBE APDs grown on large silicon wafers promise significant FPA cost reduction both by increasing the number of arrays on a given wafer and enabling automated processing.

  6. New MBE (molecular beam epitaxy) buffer used to eliminate backgating in gaas mesfets

    SciTech Connect

    Smith, F.W.; Calawa, A.R.; Chen, C.L.; Manfra, M.J.; Mahoney, L.J.

    1988-02-01

    A new buffer layer has been developed that eliminates backgating between MESFET's fabricated in active layers grown upon it. The new buffer is grown by molecular beam epitaxy (MBE) at low substrate temperatures (150-300 C) using Ga and As4 beam fluxes. It is highly resistive, optically inactive, and crystalline, and high-quality GaAs active layers can be grown on top of the new buffer. MESFET's fabricated in active layers grown on top of this new buffer show improved output resistance and breakdown voltages; the dc and Rf characteristics are otherwise comparable to MESFET's fabricated by alternative means and with other buffer layers.

  7. Fabrication of photonic crystal lasers by MBE air-hole retained growth

    NASA Astrophysics Data System (ADS)

    Nishimoto, Masaya; Ishizaki, Kenji; Maekawa, Kyohei; Liang, Yong; Kitamura, Kyoko; Noda, Susumu

    2014-09-01

    We report the fabrication of photonic crystal surface-emitting lasers using an MBE air-hole retained growth method. We demonstrate the achievement of single-mode oscillation and observe a single-lobed, linearly polarized beam. We also use three-dimensional coupled wave analysis to calculate the effects of using different air-hole shapes, which determine the beam shape and polarization. A single-lobed, linearly polarized beam can be obtained by modifying the air holes from circular to a tilted-corn shape after growth.

  8. Experimental investigation of MBE GaAs rib waveguides at 10.6 microns

    NASA Astrophysics Data System (ADS)

    Sarkis, R. G.; Larson, D. C.; Jenkinson, H. A.

    1989-10-01

    Results are evaluated from recent investigations of the performance of n/n(+)-GaAs rib waveguides fabricated by MBE and reactive-ion etching. A simple, 'effective index' analysis method is used to predict bound-mode propagation constants; a comparison with alternative analyses shows the method to be sufficiently accurate for the geometries in question. Intensity curves are obtained experimentally as a function of incident angle, for correlation with theoretical, lower-order modes. A prism-coupling approach is developed which not only allows experimenters to excite and observe the bands of a rib waveguide, but to empirically determine their values.

  9. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  10. Si-doped GaAs/AlGaAs TJS laser by MBE

    SciTech Connect

    Mitsunaga, K.; Fujiwara, K.; Nunoshita, M.; Nakayama, T.

    1984-04-01

    The effect of high temperature annealing on the properties of silicon-doped GaAs/AlGaAs double heterostructure (DH) grown by molecular beam expitaxy (MBE)= and its application to the fabrication of transverse junction stripe (TJS) lasers are reported. In spite of the amphoteric nature of Si, it was found that the high temperature annealing gave little influence on the electrical and optical quality of the n-type DH wafer. The TJS laser using Si-doped GaAs/AlGaAs wafer has been oscillated cw at room temperature and exhibited low threshold current of 30 mA and high quantum efficiency of 60%.

  11. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2010-01-08

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  12. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    NASA Astrophysics Data System (ADS)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  13. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    SciTech Connect

    Palmstrom, Chris

    2009-07-01

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  14. Effects of incident short wavelength (UV) light on the morphology of MBE grown GaAs

    NASA Astrophysics Data System (ADS)

    Beaton, Daniel A.; Sanders, Charlotte; Alberi, Kirstin

    2014-03-01

    The exploration of novel semiconductor materials increasingly relies on growth techniques that operate far from equilibrium in order to overcome thermodynamic limitations to synthesis. As one example, low temperature molecular beam epitaxy (MBE) offers a pathway to enhance substitutional dopant incorporation over surface segregation but adatom mobility suffers as a consequence and leads to higher concentrations of lattice defects. We explore the use of external stimuli, namely incident UV light, as a means to influence adatom kinetics; UV light is absorbed in the first few atomic layers of the as-growing epitaxial film and the effects of the incident radiation predominantly effect only the surface adatoms. GaAs homoepitaxy by MBE is studied as a model case as a function of illumination conditions under broadband Xe and KrF excimer laser irradiation. In-situ reflective high energy electron diffraction analysis paired with ex-situ atomic force microscopy measurements yields insight into the effects of photon irradiation on surface adatom mobility, morphology and smoothing processes. This work was supported by the DOE Office of Science, Basic Energy Sciences under contract DE-AC36-08GO28308.

  15. Unraveling the electron pairing mechanism of FeSe by MBE and STM

    NASA Astrophysics Data System (ADS)

    Song, Canli

    Studies of high-transition-temperature superconductivity usually suffer from various imperfections in materials. Here we apply the state-of-the-art molecular beam epitaxy (MBE) to prepare controllably high-quality FeSe films on various substrates, and explore their superconducting properties using cryogenic scanning tunneling microscope. Single impurities, twin boundaries as well as strain are found in the MBE-grown FeSe films on graphene, and invariably suppress the superconductivity. Meanwhile, electronic nematicity and signatures of a bosonic mode, whose energy also decreases with strain, were identified. More significantly, we observed two disconnected superconducting domes at alkali-metal potassium (K)-dosed FeSe surface, stepping towards the mechanistic understanding of superconductivity in FeSe-derived superconductors. Our results are clarifying the secret of high-Tc superconductivity in FeSe-related superconductors, and by implications, in other unconventional superconductors, and guiding how to enhance Tc by interface engineering. This work was nancially supported by National Science Foundation and Ministry of Science and Technology of China.

  16. Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Jaime-Vasquez, M.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.; Peterson, J.; Reddy, M.; Vilela, M. F.; Johnson, S. M.; Lofgreen, D. D.; Yulius, A.; Bostrup, G.; Carmody, M.; Lee, D.; Couture, S.

    2014-11-01

    State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a molecular beam epitaxy (MBE) preparation etch, exposed Te precipitates, small pits, and bumps on the (112)B surface of the CdZnTe wafer were observed. From near-infrared and dark field microscopy, the bumps and small pits on the CdZnTe surface are associated with strings of Te precipitates. Raised bumps are Te precipitates near the surface of the (112)B CdZnTe where the MBE preparation etch has not yet exposed the Te precipitate(s). An exposed Te precipitate sticking above the etched CdZnTe surface plane occurs when the MBE preparation etch rapidly undercuts a Te precipitate. Shallow surface pits are formed when the Te precipitate is completely undercut from the surrounding (112)B surface plane. The Te precipitate that was previously located at the center of the pit is liberated by the MBE preparation etch process.

  17. Drift compression experiments on MBE-4 and related emittance growth phenomena

    SciTech Connect

    Eylon, S.; Faltens, A.; Fawley, W.; Garvey, T.; Hahn, K.; Henestroza, E.; Smith, L.

    1991-04-01

    We have recently conducted a series of experiments on the MBE-4 heavy ion accelerator in which a velocity tilt was placed on the beam in the first accelerating section beyond the injector, followed by drift compression over the remaining 11 meters. Depending upon the magnitude of the velocity tilt and the accompanying mismatch in the focusing lattice, emittance growth was observed, manifested by butterfly'' shapes in x {minus} x{prime} phase space. We discuss various analytical limits on ion beam compression and relate them to these experiments and also to a driver for a heavy ion fusion reactor. We also present numerical simulations which investigate various aspects of compression and consequent emittance growth. 2 refs., 3 figs., 1 tab.

  18. An overview of hgcdte mbe defects and analysis of defect size

    NASA Astrophysics Data System (ADS)

    Olsson, Kurt Robert

    HgCdTe is the most widely used material for high performance infrared detection applications. Growth of HgCdTe epitaxial layers by molecular beam epitaxy (MBE) has ushered in advanced devices that take advantage of the unique properties of the material. Formation of defects during the growth process is one of the largest drawbacks to this technology, and must be minimized to increase device operability. In this paper, the defects encountered in HgCdTe are categorized, along with formation mechanisms and possible means of reduction. A new method of defect identification is proposed, which takes advantage of full wafer defect mapping capabilities. A correlation between the thickness of the grown film and the size of defects initiated at the substrate surface is found. This allows further defect information to be extracted from the size and density of the defects.

  19. Incorporation and desorption of sulphur In InP grown by MBE

    NASA Astrophysics Data System (ADS)

    Airaksinen, V. M.; Cheng, T. S.; Stanley, C. R.

    1987-02-01

    Sulphur doped InP has been grown by molecular beam epitaxy (MBE) using an electrochemical cell as a source of sulphur dimer S 2. At growth temperatures of over 500°C sulphur is lost from the layers as a volatile indium sulphide which desorbs with an activation energy of 4.5 eV. The concentration of incorporated sulphur ( C S) is linearly proportional to the incident sulphur flux both at low ( T s < 500°C) and high ( T s > 500°C) growth temperatures, indicating first order kinetics of incorporation and desorption f sulphur. The desorption cannot be suppressed by increasing the P 2: In flux ratio. The desorption rate is also independent of the incident indium flux. A thermodynamic analysis shows that the most likely desorbing species is In 2S.

  20. Surface structure transitions on (0 0 1) GaAs during MBE

    NASA Astrophysics Data System (ADS)

    Preobrazhenskii, V. V.; Putyato, M. A.; Pchelyakov, O. P.; Semyagin, B. R.

    1999-05-01

    Experimental phase diagrams of GaAs (0 0 1) surface were obtained by direct measuring of the As 4 flux and the substrate temperature. The infringement of the epitaxial growth was found to occur at the ratio of As 4 to Ga fluxes less than or equal to 0.25. Hence, the As 4 incorporation coefficient is close to unity during MBE. A diffusion model was suggested to describe positions of boundaries between surface structures (SS) in the phase diagrams. Dependencies of temperatures of SS transitions on the rate of surface heating in the absence of incident fluxes were obtained. The transition temperatures were discovered to tend to constant values as the heating rate increased. A model underlying this dependence was developed.

  1. Polycrystalline ZnS(x)Se(1 - x) thin films deposited on ITO glass by MBE.

    PubMed

    Shen, Da-Ke; Sou, I K; Han, Gao-Rong; Du, Pi-Yi; Que, Duan-Lin

    2003-01-01

    MBE growth of ZnS(x)Se(1 - x) thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270 degrees C to 330 degrees C . The XRD theta/2theta spectra resulted from these films indicated that the as-grown polycrystalline ZnS(x)Se(1 - x) thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 degrees C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnS(x)Se(1 - x) thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure. PMID:12659224

  2. The Mid-Barremian Event (MBE): the Prelude to the OAE1a

    NASA Astrophysics Data System (ADS)

    Coccioni, R.; Galeotti, S.; Sprovieri, M.

    2003-12-01

    Detailed litho-, bio- and chemostratigraphic investigations of the Hauterivian-lowermost Aptian Maiolica pelagic limestones in the Umbria-Marche sequence, allowed to identify that the Selli Level, which is the regional sedimentary expression of the OAE 1a, represents the climax of a ca. 5 myr-long cycle of black shale deposition starting at the lower/upper Barremian boundary within polarity Chronozone M3 and H. similis-H. kutznetsovae planktonic foraminiferal Zone, that is in the lowermost part of the calcareous nannofossil Zone NC 5D. This long-term cycle starts with a prominent short-term event, here named mid-Barremian Event (MBE), which is associated with several changes in the biotic and abiotic records. In particular, a comparison of the available chemo- litho-, and biostratigraphic data from the Umbria-Marche Basin, allows to recognise that the MBE is defined by: 1) a 0.5 per mil positive shift in the carbon isotope values (Hadji, 1993; unpublished data); 2) a major step in the initial evolutive radiation of planktonic foraminifera (unpublished data); 3) a major turnover in the radiolarian assemblages (Jud, 1994; O'Dogherty, 1994). The above mentioned change in carbon isotope values can be confidently correlated over the Mediterranean Tethys which is the sole area where a detailed isotopic record is available for the entire Barremian (Erba et al., 1999; Wissler et al., 2002). These lines of evidence concur to define the MBE as an outstanding event associated with large scale changes in the ocean-climate system likely related to the rapid oceanic Ontong-Java Plateau formation, which eventually led to OAE1a. Remarkably, the MBE largely predates the well known series of biotic and geochemical events occurring prior to the OAE1a and may be considered as the real turning point in the Barremian-Aptian long-term cycle of black-shale deposition and evolutionary turnovers in several fossil groups. References Erba, E., Channell, J.E.T., Claps, M., Jones, C., Larson, R

  3. Nitride-MBE system for in situ synchrotron X-ray measurements

    NASA Astrophysics Data System (ADS)

    Sasaki, Takuo; Ishikawa, Fumitaro; Yamaguchi, Tomohiro; Takahasi, Masamitu

    2016-05-01

    A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride semiconductors.

  4. Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of ~3.3 μm diode lasers

    NASA Astrophysics Data System (ADS)

    Kaspi, Ron; Lu, Chunte; Yang, Chi; Newell, Timothy C.; Luong, Sanh

    2015-09-01

    We apply the desorption mass spectrometry (DMS) technique and analyze the desorbed Sb species in-situ during MBE growth of mixed As/Sb heterostructures. We demonstrate how DMS is useful in pre-growth calibration of the V/III ratio, the group-III ratio, as well as the Sb-content in quaternary or quinary mixed As/Sb alloys. We also apply DMS to the digital alloy growth method. For demonstration purposes, we start with an un-calibrated MBE system, use the DMS technique to calibrate all of the previously undetermined MBE parameters and grow a ~3.3 μm diode laser heterostructure in only one attempt. The results demonstrate that the DMS technique will allow the MBE to quickly converge toward a set of acceptable growth parameters without the need for ex-situ calibration of alloy composition.

  5. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    SciTech Connect

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  6. Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe

    NASA Astrophysics Data System (ADS)

    Reddy, M.; Lofgreen, D. D.; Jones, K. A.; Peterson, J. M.; Radford, W. A.; Benson, J. D.; Johnson, S. M.

    2013-11-01

    HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate.

  7. MBE growth of active regions for electrically pumped, cw-operating GaSb-based VCSELs

    NASA Astrophysics Data System (ADS)

    Kashani-Shirazi, K.; Bachmann, A.; Boehm, G.; Ziegler, S.; Amann, M.-C.

    2009-03-01

    Electrically pumped, cw-operating, single-mode GaSb-based VCSELs are attractive light sources for trace-gas sensing systems using tunable diode laser absorption spectroscopy (TDLAS) [A. Vicet, D.A. Yarekha, A. Pérona, Y. Rouillard, S. Gaillard, Spectrochimica Acta Part A 58 (2002) 2405-2412]. Only recently, the first electrically pumped (EP) devices emitting at 2.325 μm in cw-mode at room temperature have been reported [A. Bachmann, T. Lim, K. Kashani-Shirazi, O. Dier, C. Lauer, M.-C. Amann, Electronics Letters 44(3) (2008) 202-203]. The fabrication of these devices employs the molecular beam epitaxy (MBE) growth of GaSb/AlAsSb-distributed Bragg mirrors, a multi-quantum-well active region made of AlGaAsSb/InGaAsSb and an InAsSb/GaSb-buried-tunnel junction. As VCSELs are usually driven under high injection rates, an optimum electrical design of active regions is essential for high-performance devices. In this paper we present an enhanced simulation of current flow in the active region under operation conditions. The calculation includes carrier transport by drift, diffusion and tunneling. We discuss different design criteria and material compositions for active regions. Active regions with various barrier materials were incorporated into edge emitter samples to evaluate their performance. Aluminum-containing barriers show better internal efficiency compared to active regions with GaSb as the barrier material.

  8. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela del Arco, Maria; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, Maria

    2006-01-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 x 1 surfaces with low (<1 degree) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 x 7 vicinal substrates misoriented 4 degrees toward the View the MathML source direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  9. Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer

    NASA Astrophysics Data System (ADS)

    Rieger, Torsten; Heiderich, Sonja; Lenk, Steffi; Lepsa, Mihail Ion; Grützmacher, Detlev

    2012-08-01

    We present detailed results about the molecular beam epitaxy (MBE) growth of GaAs nanowires (NWs) on GaAs (111)B substrates prepared for the growth by a new method using hydrogen silsesquioxane (HSQ). Before the growth, HSQ is converted to SiOx by thermal treatment. The NWs are grown via the vapor-liquid-solid (VLS) mechanism. The influence of five growth parameters are described: SiOx thickness, growth time, substrate temperature and Ga and As4 beam fluxes. It is shown that the nanowire density can be tuned by two orders of magnitude by adjusting the SiOx thickness. Additionally, the results demonstrate that the axial growth is controlled by the As4 beam flux whereas the lateral growth is controlled by the Ga beam flux. The observed NW tapering is mainly determined by the V/III beam flux ratio. Our study gives important information about the VLS growth mechanism, which is extended by considering the secondary adsorption process of Ga adatoms. The nanowires have predominantly zinc blende crystal structure with rotational twins. A wurtzite segment is always found at the top of the NWs being associated with the growth after the Ga shutter has been closed.

  10. MBE growth of topological insulator Bi2Se3 and Bi2Te3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Tong; Levy, Niv; Song, Young Jae; Chae, Jungseok; Stroscio, Joseph A.

    2011-03-01

    Three-dimensional (3D) topological insulators are a new state of quantum matter with a band gap in bulk but gapless states on the surface. The surface states with spin helicity can be the host of many striking quantum phenomena. In this work, we use ultrahigh vacuum molecular beam epitaxy to grow atomically flat topological insulator (TI) Bi2Se3 and Bi2Te3 films. High quality TI films were obtained using epitaxial graphene on SiC as a substrate for TI growth. The growth dynamics was characterized by real time reflection high-energy electron diffraction (RHEED). The growth condition was optimized by adjusting for proper flux rate and substrate temperature while monitoring the RHEED patterns. In situ Auger spectroscopy and scanning tunneling microscopy (STM) measurements at 5K are used to study the as-grown films for their stoichiometry and defect density. We expect these MBE grown samples will provide a good candidate for studying the topological surface states and related phenomena, which will be studied using scanning tunneling spectroscopy at millikelvin temperatures

  11. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  12. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  13. MBE growth and characterization of TlInGaAsN double quantum well structures

    NASA Astrophysics Data System (ADS)

    Krishnamurthy, D.; Shanthi, S.; Kim, K. M.; Sakai, Y.; Ishimaru, M.; Hasegawa, S.; Asahi, H.

    2009-03-01

    In the pursuit of reducing the temperature dependence of the emission wavelengths of devices, TlInGaAsN double quantum well (DQW) structures with different barriers grown on GaAs substrates by molecular beam epitaxy (MBE) were investigated. Higher Tl incorporation, a key parameter to reduce temperature dependence, could be obtained in the TlGaAsN barrier samples. However, the presence of many dislocations and very rough interfaces together with phase separation reduced the photoluminescence (PL) characteristics. DQW structures with combined barriers of TlGaAsN+TlGaAs+TlGaAsN and those consisting of TlGaAsN with reduced N composition showed improved crystalline characteristics. The (2 2 4) reciprocal space maps of these two samples did not show any diffraction corresponding to phase segregation. However, cross-sectional transmission electron microscopy (X-TEM) images revealed the presence of inhomogeneity (i.e., the presence of nearly perfect regions with good interfaces as well as regions with rough interfaces) in these samples.

  14. Characterization of ZnSe homo-interface grown by MBE

    NASA Astrophysics Data System (ADS)

    Nakanishi, F.; Doi, H.; Yamada, T.; Matsuoka, T.; Nishine, S.; Matsumoto, K.; Shirakawa, T.

    1997-06-01

    A ZnSe homo-interface, which was formed by MBE, was characterized. First, when the unetched ZnSe substrates were used, 3D-nucleation occurred, which suggested the remnant of the heterogeneous nuclei. Consequently, the interface layer was clearly visible and as high as 10 8 cm -2 crystal defects, such as dislocations and stacking faults, were observed by cross sectional TEM. The EPD was uncountable at this high defect density. Second, when the substrates were chemically etched, 2D-nucleation was confirmed by RHEED, and interface layer and defects were not observed by cross sectional TEM. However plan-view TEM and EPD revealed that about 10 6-10 7 cm -2 crystal defects were observed. To clarify the origin of the crystal defects at the homo-interface, SIMS analysis was performed and the results showed the pile up of oxygen at the interface, and the EPD was proportional to the intensity of the O signal. Finally, the reduction of the oxide layer after the chemical etching was tried using various reagents. The reconstruction pattern of the RHEED was observed at lower temperatures using HCl solution and the EPD was lowered near the level of the ZnSe substrates, 10 4-10 5 cm -2

  15. MBE fabrication of self-assembled Si and metal nanostructures on Si surfaces

    NASA Astrophysics Data System (ADS)

    Galiana, Natalia; Martin, Pedro-Pablo; Munuera, Carmen; Varela, María; Soria, Federico; Ocal, Carmen; Ruiz, Ana; Alonso, María

    2006-09-01

    Two types of fairly regular distributions of Si nanostructures, of interest as templates to grow spatially controlled ensembles of metal (Co, Fe, Ag, etc.) nanostructures, are presented in this paper. Both of them are achieved by self-assembling processes during Si homoepitaxy. One corresponds to films grown by molecular beam epitaxy (MBE) on Si(0 0 1)-2 × 1 surfaces with low (<1°) miscut angles. In this case, arrays of 3D Si-islands displaying well defined pyramid-like shapes can be obtained, as evidenced by Scanning Force Microscopy (SFM) and Scanning Transmission Electron Microscopy (STEM). Such arrays exhibit strong similarities with those reported for Ge and SiGe islands on Si(0 0 1), and may thus serve as a simpler route to produce ordered distributions of metallic nanodots. On the other hand, on Si(1 1 1)-7 × 7 vicinal substrates misoriented 4° toward the [1 1 2¯] direction, step rearrangement during homoepitaxy permits to produce nanopatterned surfaces, the building-blocks of which are triangular (1 1 1) platforms, with lateral dimensions of hundreds of nanometers, bound by step bunches about 30 nm high. Furthermore, different Ag deposition experiments support this spontaneous patterning on Si(1 1 1) as a promising approach to achieve regular distributions of metallic nanocrystals with an overall homogeneity in sizes, shapes and spacing.

  16. High quality, hybrid-MBE growth of SrVO3 thin films

    NASA Astrophysics Data System (ADS)

    Moyer, Jarrett; Eaton, Craig; Engel-Herbert, Roman

    2013-03-01

    Vanadium-based transition metal oxides are an intriguing class of materials to study due to the metal-to-insulator (MIT) transitions that arise in many of the binary oxides (i.e. VO2, V2O3, V2O5) . The perovskite SrVO3 is metallic in bulk; however, it is possible to induce an MIT by modulating the bandwidth through strain or dimensional confinement. A mandatory requirement for controlling the electronic phase transition properties in material systems with strong correlation is the growth of high quality, stoichiometric thin films. This is demonstrated here with the growth of SrVO3 on LSAT (001) substrates using a hybrid-MBE technique, where the Sr is evaporated from an effusion cell and the V is provided through the metal-organic precursor vanadium oxo-tri-isopropoxide (VTIP). The structural properties of films with varying VTIP:Sr ratios are characterized by RHEED, XRD, AFM and TEM. These measurements demonstrate that SrVO3 can be grown with excellent structural quality, atomically flat surfaces and rocking curves of the same width as the substrate, accomplishing a necessary first step in controlling the MIT in SrVO3. This research is primarily supported by ONR Grant N00014-11-1-0665

  17. IMPORTANCE OF IN SITU MONITORS IN THE PREPARATION OF LAYERED OXIDE HETEROSTRUCTURES BY REACTIVE MBE.

    SciTech Connect

    Schlom, Darrell G.; Haeni, J. H.; Theis, C. D.; Tian, W.; Pan, X. Q.; Brown, G. W.; Hawley, M. E.

    2001-01-01

    Using a variety of in situ monitors and when possible adsorption-controlled growth conditions, layered oxide heterostructures including new compounds and metastable superlattices have been grown by reactive molecular beam epitaxy (MBE). The heteroepitaxial layers grown include Bi{sub 4}Ti{sub 3}O{sub 12}-SrTiO{sub 3} and Bi{sub 4}Ti{sub 3}O{sub 12}-PbTiO{sub 3} Aurivillius phases, Sr{sub n+1}Ti{sub n}O{sub 3n+1} Ruddlesden-Popper phases, and metastable PbTiO{sub 3}/SrTiO{sub 3} and BaTiO{sub 3}/SrTiO{sub 3} superlattices. Accurate composition control is key to the controlled growth of such structures, and to this end combinations of reflection high-energy electron diffraction (RHEED), atomic absorption spectroscopy (AA), a quartz crystal microbalance (QCM), and adsorption-controlled growth conditions were employed during growth. The structural perfection of the films has been investigated using in situ RHEED, four-circle x-ray diffraction, atomic force microscopy (AFM), and high-resolution transmission electron microscopy (TEM).

  18. MCT by MBE on GaAs at AIM: state of the art and roadmap

    NASA Astrophysics Data System (ADS)

    Figgemeier, Heinrich; Wenisch, Jan; Eich, Detlef; Hanna, Stefan; Schirmacher, Wilhelm; Lutz, Holger; Schallenberg, Timo; Breiter, Rainer

    2015-06-01

    In multiple publications over the last years, MCT MBE on GaAs has been shown to be a very versatile and promising material system and indeed may be the prime candidate among the alternative substrates for the fabrication of high-performance detectors across the whole IR composition range. In this paper we report on successful growth of MCT on GaAs over the composition range 0.2 < x(Cd) < 0.8. A single color MWIR 640 × 512, 15 μm pitch detector fabricated from this material with an operability of 99.71% at an operating temperature of 120 K is presented. In the LWIR region, an operability of 99.48% at 65 K has been achieved with a 1280 × 1024, 15 μm pitch detector. Finally we report on preliminary results of a dual-color 640 × 512, 20 μm pitch detector with cutoff wavelengths in the 3 - 4 and 4 - 5 μm range.

  19. MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

    SciTech Connect

    Howard, A.J.; Fritz, I.J.; Drummond, T.J.; Olsen, J.A.; Hammons, B.E.; Kurtz, S.R.; Brennan, T.M.

    1993-11-01

    Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMS roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.

  20. An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells

    NASA Astrophysics Data System (ADS)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Dvoretskii, S. A.; N. Mikhailov, N.; Gorn, D. I.

    2013-12-01

    The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1- x Cd x Te with quantum wells (QW) in the test-signal frequency range 1 kHz - 2 МHz at temperatures 8-300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers - 0.65 and 0.62, respectively.

  1. Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxides

    NASA Astrophysics Data System (ADS)

    Yamamoto, Hideki; Krockenberger, Yoshiharu; Naito, Michio

    2013-09-01

    Molecular beam epitaxy (MBE) has been an excellent tool to design artificial heterostructures in the research field of semiconductors by means of an alternate stacking of existing lattices. This article describes further capabilities of MBE as a synthesis tool sui generis, especially for multi-cation oxides, due to low-temperature reaction and the pseudomorphic stabilization effect by epitaxy. Single-crystalline Sr0.9La0.1CuO2 films exhibiting metallic conduction and superconductivity are successfully prepared by MBE. A new phase, T*-La2CuO4, is also stabilized on a DyScO3 substrate. Methods of high-precision rate control of each constituent element, which is prerequisite for a reproducible growth of the multi-cation oxide films, are also discussed.

  2. Self-regulating MBE growth of stoichiometric BaSnO3 films via reactive radical mechanism

    NASA Astrophysics Data System (ADS)

    Prakash, Abhinav; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat

    Growth of thin films comprising of element with low oxidation potential such as Sn often requires reactive oxidants such as ozone or high-pressure oxygen plasma. By utilizing the chemistry of highly reactive radical of Sn, we will present on the growth of phase-pure, epitaxial BaSnO3 films using a hybrid molecular beam epitaxy (MBE) approach with scalable growth rates. The notable finding was that Sn radicals are very reactive to yield phase-pure BaSnO3 films even in molecular oxygen. In this approach, we use hexamethylditin (HMDT) as a tin source, a solid effusion cell for Ba and either molecular oxygen or an rf oxygen plasma source. Phase-pure BaSnO3 films were grown at 900 0C, and oxygen pressure of 5x10-6 Torr as a function Sn:Ba ratio. In-situ time-dependent RHEED intensity oscillations were observed establishing a layer-by-layer growth mode and a critical thickness of ~1 nm for strain relaxation. Rutherford backscattering spectrometry and lattice constant determined using high-resolution X-ray diffraction was used to optimize cation stoichiometry. ``MBE growth window'' was identified where films show bulk-like lattice parameter (4.116 Å) over a wide-range of cation flux ratios. A correlation between RHEED patterns, stoichiometry, and surface morphology was established This work is supported primarily by NSF (DMR-1410888).

  3. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-09-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  4. Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Gu, R.; Lei, W.; Antoszewski, J.; Faraone, L.

    2016-05-01

    Si, Ge, and GaAs have been extensively investigated as alternative substrates for molecular-beam epitaxy (MBE) growth of HgCdTe and, at present, are widely used for HgCdTe-based infrared focal-plane arrays. However, the problem of high dislocation density in HgCdTe layers grown on these lattice-mismatched substrates has yet to be resolved. In this work, we investigated another alternative substrate, GaSb, which has a significantly smaller lattice mismatch with HgCdTe in comparison with Si, Ge, and GaAs, and is readily available as large-area, epiready wafers at much lower cost in comparison with lattice-matched CdZnTe substrates. The resultant stress due to lattice and thermal mismatch between the HgCdTe epilayer and various substrates has been calculated in this work using the elasticity matrix, and the corresponding stress distribution simulated using ANSYS. The simulated structures were matched by experimental samples involving MBE growth of HgCdTe on GaAs, GaSb, and CdZnTe substrates, and were characterized via reflection high-energy electron diffraction and x-ray diffraction analysis, followed by etch pit density (EPD) analysis. In comparison with other alternative substrates, GaSb is shown to have lower interface stress and lower EPD, rendering it an interesting and promising alternative substrate material for HgCdTe epitaxy.

  5. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-03-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  6. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 1 2010-07-01 2010-07-01 false Does an entity certified as an MBE or....210 Section 33.210 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY GRANTS AND OTHER FEDERAL ASSISTANCE PARTICIPATION BY DISADVANTAGED BUSINESS ENTERPRISES IN UNITED STATES ENVIRONMENTAL...

  7. Molecular beam epitaxy (MBE) growth of rare earth doped gallium nitride for laser diode application

    NASA Astrophysics Data System (ADS)

    Park, Jeongho

    The goal of this dissertation is to demonstrate the visible laser emission from rare earth doped GaN grown on sapphire and silicon substrate. The research presented in this dissertation focused on exploration of RE's physics and laser characteristics and investigating site selective laser emission. In this study, the first visible (red) lasing emission from Eu-doped GaN thin films grown on sapphire substrates was demonstrated. The edge emission fulfills the requirements of stimulated emission properties: super-linear characteristic, spectrum line narrowing, polarization effect, lifetime reduction, and longitudinal modes in a Fabry-Perot cavity. The GaN:Eu active layer has low threshold (˜10kW/cm2) for the onset of lasing. The optical gain and loss are of the order of 50 and 20cm-1, respectively. Growth conditions are investigated for gain enhancement and loss reduction. To obtain the high gain and low loss active layer, N-rich growth conditions are required. Channel waveguide cavities result in 5x increases in gain value compared to planar waveguides. To utilize the performance and flexibility of silicon microelectronics, we used silicon (111) substrate, which incorporated several AlGaN and AIN thin films as buffer, strain compensation and bottom optical cladding layers. With this substrate, we developed the laser structure emitting visible wavelength. We have utilized Eu-doped GaN for the active medium within a structure consisting of a top cladding AlGaN layers grown by MBE on a Si substrate. Stimulated emission (SE) was obtained at room temperature from Eu3+ at 620nm, with a threshold of ˜117kW/cm 2. Values of modal gain and loss of ˜100 and 46 cm-1 were measured. This demonstration indicates that utilizing rare earths a range of lasers on Si can be obtained, covering the UV, visible and IR regions, thus enabling a significant expansion of optoelectronic and microelectronic integration. The dependence of optical modal gain and loss on GaN:Eu growth

  8. X-ray Investigation of Ferromagnetic MnAs Thin Films Grown on GaAs(001) by MBE

    NASA Astrophysics Data System (ADS)

    Huang, S.; Ming, Z. H.; Soo, Y. L.; Kao, Y. H.; Tanaka, M.; Munekata, H.

    1996-03-01

    Quantitative characterization of the microstructures in epitaxial layers grown by MBE is essential for understanding the dynamical processes of epitaxy and surface morphology. In the present study, various x-ray techniques including grazing incidence x-ray scattering (GIXS), x-ray diffraction (XRD), and extended x-ray absorption fine structure (EXAFS) have been employed to investigate the microstructures of two MnAs thin films grown on GaAs(001) by using two different growth templates. The film structures are compared in terms of the interfacial roughness, lattice constants, epilayer thickness, local environment surrounding the Mn atoms, coordination number, and local disorder. These results provide quantitative evidence for the effects of template on the local structure and crystallinity of the MnAs films which can be correlated with the observed difference in their physical properties such as the easy magnetization direction, etc.. * Research is supported in part by DOE.

  9. Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

    NASA Astrophysics Data System (ADS)

    Sadofyev, Yu. G.; Martovitsky, V. P.; Klekovkin, A. V.; Saraikin, V. V.; Vasil'evskii, I. S.

    A stack of five metastable 200-nm-thick elastically strained GeSn epitaxial layers separated by 20-nm-thick Ge spacers was grown on (001) Si/Ge virtual substrate by MBE. The molar fraction of Sn in different layers varied from 0.005 to 0.10, increasing with the layer distance from the Ge buffer. The phase separation of the GeSn alloy during postgrowth annealing takes place along with plastic relaxation. The phase separation begins well before the completion of the plastic relaxation process. The degree of phase separation at a given annealing temperature depends strongly on the Sn content in the GeSn alloy. The Sn released from the decomposed GeSn alloy predominantly accumulates as an amorphous layer on the surface of the sample.

  10. Laser-MBE of nickel nanowires using AAO template: a new active substrate of surface enhanced Raman scattering.

    PubMed

    Zhang, Lisheng; Fang, Yan; Zhang, Pengxiang

    2008-01-01

    The highly ordered anodic aluminum oxide (AAO) template was fabricated using aluminum anodizing in electrolytes with two-step method, which apertures were about 50-80nm. The nickel nanowires with about 40-70nm in diameter was prepared on the AAO template by laser-MBE (molecular beam epitaxy). And high quality Raman spectra of SudanII were obtained on the glass covered with the nickel nanowires. On the nickel nanowires there are both surface enhanced Raman scattering (SERS) and tip enhanced Raman scattering (TERS). The new observations not only enlarge the range of SERS applications, but also imply a possible new enhancement mechanism. Otherwise the Raman and SERS frequencies of SudanII molecule were calculated using, respectively, DFT and B3PW91. PMID:17627875

  11. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates

    NASA Astrophysics Data System (ADS)

    Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.; Downey, Brian P.; Wheeler, Virginia D.; Storm, David F.; Hardy, Matthew T.

    2015-08-01

    RF-plasma MBE was used to epitaxially grow 4- to 100-nm-thick metallic β-Nb2N thin films on hexagonal SiC substrates. When the N/Nb flux ratios are greater than one, the most critical parameter for high-quality β-Nb2N is the substrate temperature. The X-ray characterization of films grown between 775 and 850 °C demonstrates β-Nb2N phase formation. The (0002) and (21\\bar{3}1) X-ray diffraction measurements of a β-Nb2N film grown at 850 °C reveal a 0.68% lattice mismatch to the 6H-SiC substrate. This suggests that β-Nb2N can be used for high-quality metal/semiconductor heterostructures that cannot be fabricated at present.

  12. Polarized Raman spectroscopy of corrugated MBE grown GaAs (6¯3¯1¯) homoepitaxial films

    NASA Astrophysics Data System (ADS)

    Espinosa-Vega, L. I.; Rodriguez, A. G.; Cruz-Hernandez, E.; Martinez-Veliz, I.; Rojas-Ramirez, J.; Ramirez-Lopez, M.; Nieto-Navarro, J.; Lopez-Lopez, M.; Mendez-Garcia, V. H.

    2013-09-01

    In this work, we present a Raman scattering study of GaAs layers grown on (6¯3¯1¯)-oriented substrates by molecular beam epitaxy. A set of samples whose morphology sustained different corrugation order were grown by MBE by varying the growth parameters such as temperature and As/Ga flux ratio. We employed polarized Raman spectroscopy using the backscattering configurations Z(XX) Z¯, Z(XY) Z¯ and Z(YY)Z¯. According to the calculated dipole selection rules both TO and LO phonons are allowed for backscattering from a perfect GaAs (6¯3¯1¯) crystal, but with the intensity of the TO phonon much larger than that of the LO phonon. However, it is found that the selection rules differ for corrugated samples. Besides, the TO/LO phonon resonances intensity ratio and the LO peak asymmetry depend on the corrugation order of the samples.

  13. Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi₂Te₃ Surfaces under Ambient Conditions.

    PubMed

    Macedo, Rita J; Harrison, Sara E; Dorofeeva, Tatiana S; Harris, James S; Kiehl, Richard A

    2015-07-01

    The local electrical characteristics on the surface of MBE-grown Bi2Te3 are probed under ambient conditions by conductive atomic force microscopy. Nanoscale mapping reveals a 10-100× enhancement in current at step-edges compared to that on terraces. Analysis of the local current-voltage characteristics indicates that the transport mechanism is similar for step-edges and terraces. Comparison of the results with those for control samples shows that the current enhancement is not a measurement artifact but instead is due to local differences in electronic properties. The likelihood of various possible mechanisms is discussed. The absence of enhancement at the step-edges for graphite terraces is consistent with the intriguing possibility that spin-orbit coupling and topological effects play a significant role in the step-edge current enhancement in Bi2Te3. PMID:26030139

  14. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

    NASA Astrophysics Data System (ADS)

    Jiao, Wenyuan; Kong, Wei; Li, Jincheng; Collar, Kristen; Kim, Tong-Ho; Losurdo, Maria; Brown, April S.

    2016-03-01

    Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

  15. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  16. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

  17. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    PubMed Central

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  18. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  19. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    PubMed

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-01-01

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates. PMID:27101930

  20. Surface sulfurization on MBE-grown Cu(In1-x,Gax)Se2 thin films and devices

    NASA Astrophysics Data System (ADS)

    Khatri, Ishwor; Matsuyama, Isamu; Yamaguchi, Hiroshi; Fukai, Hirofumi; Nakada, Tokio

    2015-08-01

    Molecular beam epitaxy (MBE) grown Cu(In1-x,Gax)Se2 (CIGS) thin films were sulfurized at temperatures of 450-550 °C for 30 min in a 10% H2S-N2 mixture gas. The micro-roughness together with the S diffusion in the CIGS surfaces increased with increasing sulfurization temperature. Both near-band-edge PL intensity and decay time of the CIGS absorber layer enhanced after sulfurization. PL sub-peak around 80 meV below the main peak almost disappeared after sulfurization above 500 °C, which is expected due to the occupation of Se vacancies (Vse) with S. The open-circuit voltage (Voc), hence conversion efficiency, improved after sulfurization. The photovoltaic performance of the solar cells was consistent with PL intensity. Moreover, it is found for the first time from the SIMS analysis that the Cu atoms were depleted at the surface of CIGS layer after sulfurization, which could result in the improved Voc.

  1. Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

    NASA Astrophysics Data System (ADS)

    Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

    Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

  2. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    NASA Astrophysics Data System (ADS)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  3. Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

    NASA Technical Reports Server (NTRS)

    Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

    2005-01-01

    In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

  4. Preliminary report on the MBE-4, an experimental multiple-beam induction linear accelerator for heavy ions

    SciTech Connect

    Warwick, A.I.; Gough, D.E.; Meuth, H.

    1988-11-01

    A small-scale experimental accelerator called MBE-4 has been constructed to demonstrate the principle of a current-amplifying induction linac for multiple beams of heavy ions. Four beams of Cs{sup 1+}, initially at 200 keV and each with a current of 10 mA have been accelerated and amplified to a kinetic energy of 700 keV and currents of 90 mA apiece. Transverse focusing is achieved by means of electrostatic quadrupoles; longitudinally the current is amplified and the beam bunch is held together against the space charge forces by special time-dependent accelerating fields. We report on the methods developed for designing and implementing the accelerating pulses and on measurements of the transverse and longitudinal emittance of the accelerated beams. Current fluctuations and the longitudinal emittance are initially almost zero and increase as acceleration errors are accumulated. We discuss the final longitudinal emittance and the current fluctuations in the experiment in terms of their acceptability for a large heavy-ion-fusion driver. 17 refs., 23 figs., 3 tabs.

  5. MBE Grown In x Ga1- x N Thin Films with Bright Visible Emission Centered at 550 nm

    NASA Astrophysics Data System (ADS)

    Dasari, K.; Thapa, B.; Wang, J.; Wright, J.; Kaya, S.; Jadwisienczak, W. M.; Palai, R.

    2016-04-01

    The In x Ga1- x N thin films with indium content of x = 14-18 at.% were successfully grown by using molecular beam epitaxy (MBE) at high growth temperatures from 650°C to 800°C. In situ reflection high-energy electron diffraction (RHEED) of the In x Ga1- x N films confirmed the Stranski-Krastanov growth mode. X-ray diffraction (XRD) of the films confirmed their highly crystalline nature having c-axis orientation with a small fraction of secondary InN phase admixture. High-resolution cross-sectional scanning electron microscopy images showed two-dimensional epilayers growth with thickness of about ˜260 nm. The high growth temperature of In x Ga1- x N epilayers is found to be favorable to facilitate more GaN phase than InN phase. All the fundamental electronic states of In, Ga, and N were identified by x-ray photoelectron spectroscopy (XPS) and the indium composition has been calculated from the obtained XPS spectra with CASAXPS software. The composition calculations from XRD, XPS and photoluminescence closely match each other. The biaxial strain has been calculated and found to be increasing with the In content. Growing In x Ga1- x N at high temperatures resulted in the reduction in stress/strain which affects the radiative electron-hole pair recombination. The In x Ga1- x N film with lesser strain showed a brighter and stronger green emission than films with the larger built-in strain. A weak S-shaped near band edge emission profile confirms the relatively homogeneous distribution of indium.

  6. Structural, electronic and mechanical properties of alkaline earth metal oxides MO (M=Be, Mg, Ca, Sr, Ba)

    NASA Astrophysics Data System (ADS)

    Cinthia, A. Jemmy; Priyanga, G. Sudha; Rajeswarapalanichamy, R.; Iyakutti, K.

    2015-04-01

    The structural, electronic and mechanical properties of alkaline earth metal oxides MO (M=Be, Mg, Ca, Sr, Ba) in the cubic (B1, B2 and B3) phases and in the wurtzite (B4) phase are investigated using density functional theory calculations as implemented in VASP code. The lattice constants, cohesive energy, bulk modulus, band structures and the density of states are computed. The calculated lattice parameters are in good agreement with the experimental and the other available theoretical results. Electronic structure reveals that all the five alkaline earth metal oxides exhibit semiconducting behavior at zero pressure. The estimated band gaps for the stable wurtzite phase of BeO is 7.2 eV and for the stable cubic NaCl phases of MgO, CaO, SrO and BaO are 4.436 eV, 4.166 eV, 4.013 eV, and 2.274 eV respectively. A pressure induced structural phase transition occurs from wurtzite (B4) to NaCl (B1) phase in BeO at 112.1 GPa and from NaCl (B1) to CsCl (B2) phase in MgO at 514.9 GPa, in CaO at 61.3 GPa, in SrO at 42 GPa and in BaO at 14.5 GPa. The elastic constants are computed at zero and elevated pressures for the B4 and B1 phases for BeO and for the B1 and B2 phases in the case of the other oxides in order to investigate their mechanical stability, anisotropy and hardness. The sound velocities and the Debye temperatures are calculated for all the oxides using the computed elastic constants.

  7. Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements. [during MBE of GaAs and InAs

    NASA Technical Reports Server (NTRS)

    Lewis, B. F.; Fernandez, R.; Grunthaner, F. J.; Madhukar, A.

    1986-01-01

    A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

  8. Selectively doped GaAs/N-Al(0.3)Ga(0.7)As heterostructures grown by gas-source MBE

    NASA Astrophysics Data System (ADS)

    Ando, Hideyasu; Kondo, Kazuhiro; Ishikawa, Hideaki; Sasa, Shigehiko; Inata, Tsuguo

    1988-05-01

    Selectively doped GaAs/N-Al(0.3)Ga(0.7)As heterostructures with a 6 nm spacer layer have been grown for the first time by gas-source MBE using triethylgallium and triethylaluminum as group III sources, and metallic arsenic. A reasonably high two-dimensional electron gas (2DEG) mobility of 48,000 sq cm / Vs (77 K) with a sheet electron concentration of 6.8 x 10 to the 11th/sq cm was obtained at a substrate temperature of 580 C and an arsenic pressure of 0.00011.

  9. Comparison of low temperature photoluminescence of bulk MBE (Molecular Beam Epitaxy) grown AlGaAs and GaAs using a graphite generated dimer versus a standard tetramer arsenic group-V source

    SciTech Connect

    Brennan, T.M.; Hammons, B.E.; Smith, M.C.; Jones, E.D.

    1987-01-01

    The carbon concentrations in GaAs and AlGaAs grown by Molecular Beam Epitaxy (MBE) have been studied when a graphite generated dimeric arsenic species and a standard tetramer arsenic species are used as the group-V source. Photoluminescence and Van der Pauw-Hall measurements have been made to examine the material quality in reference to which arsenic species is used for film growth. Results indicate that a graphite crucible arrangement for the thermal cracking of As/sub 4/ produces significant carbon contamination and is unacceptable for the MBE growth of GaAs and AlGaAs. 15 refs., 3 figs.

  10. MBE (Molecular Beam Epitaxial) growth characterization and electronic device processing of HgCdTe, HgZnTe related heterojunctions and HgCdTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Faurie, Jean-Pierre

    1987-06-01

    As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate.

  11. Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

    NASA Astrophysics Data System (ADS)

    Carmody, M.; Yulius, A.; Edwall, D.; Lee, D.; Piquette, E.; Jacobs, R.; Benson, D.; Stoltz, A.; Markunas, J.; Almeida, A.; Arias, J.

    2012-10-01

    Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. However, recent improvements in the layer crystal quality including improvements in both the CdTe buffer layer and the HgCdTe layer growth have resulted in GaAs emerging as a strong candidate for replacement of bulk CdZnTe substrates for certain infrared imaging applications. In this paper the current state of the art in CdTe and HgCdTe MBE growth on (211)B GaAs and (211) Si at TIS is reviewed. Recent improvements in the CdTe buffer layer quality (double crystal rocking curve full-width at half-maximum ≈ 30 arcsec) with HgCdTe dislocation densities of ≤106 cm-2 are discussed and comparisons are made with historical HgCdTe on bulk CdZnTe and alternate substrate data at TIS. Material properties including the HgCdTe majority carrier mobility and dislocation density are presented as a function of the CdTe buffer layer quality.

  12. A low-temperature growth process of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam-epitaxy (ECR-MBE)

    NASA Astrophysics Data System (ADS)

    Kondo, Naoto; Nanishi, Yasushi

    1988-09-01

    Taking advantage of plasma excitation, surface cleaning and growth process are realized at low temperatures by electron-cyclotron-resonance (ECR) plasma-excited molecular-beam-epitaxy (MBE). Prior to growth, substrates are cleaned by exposure to hydrogen plasma at temperatures ranging from 300 to 550°C. Arsine gas is introduced and cracked in an ECR plasma generation chamber. Gallium is supplied either as trimethylgallium (TMG) or as metallic Ga. Epitaxial films are successfully grown at substrate temperatures low as 430°C for the TMG-arsine system and 350°C for the metallic Ga-arsine system. The growth rate for the TMG-arsine system is found to be governed by a balance between TMG decomposition and surface atom desorption. By contrast, the metallic Ga-arsine system is only governed by the desorption process. Exposure to plasma is found to promote desorption of atoms migrating on the substrate surface. The interface between the substrate and the epitaxial layer produced by the ECR-MBE process is found to be clean without piling up of impurity.

  13. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  14. Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

    NASA Astrophysics Data System (ADS)

    Kubo, K.; Kato, Y.; Kanai, K.; Ohta, J.; Fujioka, H.; Oshima, M.

    2008-10-01

    We have grown MnAs films on GaAs(1 1 1)B substrates by high-temperature molecular beam epitaxy (MBE) and have investigated their crystal structures and magnetic properties. X-ray diffraction (XRD) and grazing incidence X-ray diffraction (GIXD) results showed that two kinds of zb-type MnAs films with lattice constants of 5.73 and 5.96 Å were grown. The zb-type MnAs films show higher Curie temperature than 350 K and larger magnetization than the reported zb-type MnAs. At the initial stage of MnAs growth, Ga 1-xMn xAs was grown and this Ga 1-xMn xAs layer might play an important role of a buffer layer to enable the zb-MnAs growth.

  15. Hydrogen sulphide doping of GaAs and AlxGa1-xAs grown by molecular beam epitaxy (MBE)

    NASA Astrophysics Data System (ADS)

    Briones, F.; Golmayo, D.; González, L.; de Miguel, J. L.

    1985-03-01

    H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1- x As as sulphur vector for n-type doping. Doping efficiencies are less than 10-3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1- x As for x≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585 645 ‡C range.

  16. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells

    NASA Astrophysics Data System (ADS)

    Wu, Yuanyuan; Ji, Lian; Dai, Pai; Tan, Ming; Lu, Shulong; Yang, Hui

    2016-02-01

    Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively.

  17. Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

    NASA Astrophysics Data System (ADS)

    X, Z. Liu; C, Yue; C, T. Xia; W, L. Zhang

    2016-01-01

    High-resistivity β-Ga2O3 thin films were grown on Si-doped n-type conductive β-Ga2O3 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6× 106 Ω. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 × 1018 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 × 102% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga2O3 thin films and the n-type conductive β-Ga2O3 single-crystal substrate. Project supported by the National Nature Science Foundation of China (Grant No. 61223002) the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13111103700), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 2012018530003).

  18. MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection

    NASA Astrophysics Data System (ADS)

    de Lyon, T. J.; Baumgratz, B.; Chapman, G.; Gordon, E.; Hunter, A. T.; Jack, M.; Jensen, J. E.; Johnson, W.; Johs, B.; Kosai, K.; Larsen, W.; Olson, G. L.; Sen, M.; Walker, B.; Wu, O. K.

    1999-05-01

    Molecular-beam epitaxy (MBE) has been utilized to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 μm spectral range, as an alternative technology to existing III-V APD detectors. Device structures were grown on CdZnTe(211)B substrates using CdTe, Te, and Hg sources with in situ In and As doping. The composition of the HgCdTe alloy layers was adjusted to achieve both efficient absorption of IR radiation in the 1.1-1.6 μm spectral range and low excess-noise avalanche multiplication. The Hg 1- xCd xTe alloy composition in the gain region of the device, x=0.73, was selected to achieve equality between the bandgap energy and spin-orbit splitting to resonantly enhance the impact ionization of holes in the split-off valence band. The appropriate value of this alloy composition was determined from analysis of the 300 K bandgap and spin-orbit splitting energies of a set of calibration layers, using a combination of IR transmission and spectroscopic ellipsometry measurements. MBE-grown APD epitaxial wafers were processed into passivated mesa-type discrete device structures and diode mini-arrays using conventional HgCdTe process technology. Device spectral response, dark current density, and avalanche gain measurements were performed on the processed wafers. Avalanche gains in the range of 30-40 at reverse bias of 85-90 V and array-median dark current density below 2×10 -4 A/cm 2 at 40 V reverse bias have been demonstrated.

  19. Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1- x Cd x Te ( x = 0.31-0.32) in a Temperature Range OF 8-300 K

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Vasil'ev, V. V.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Kuz'min, V. D.; Remesnik, V. G.

    2014-09-01

    Admittance of MIS structures based on graded-gap n-Hg1- х Cd х Te ( x = 0.31-0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide temperature range (8-300 K). It is shown that the temperature and frequency dependences of the differential resistance of space charge region for structures with a graded-gap layer are qualitatively similar to those for structures without a graded-gap layer. It is found that for MIS structures based on MBE n-Hg1- х Cd х Te ( x = 0.31-0.32), regardless of the presence of a graded-gap layer, the differential resistance of space charge region is limited by the processes of Shockley-Read generation in the temperature range of 25-100 K.

  20. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

    SciTech Connect

    Childs, T.T.; Sokolov, V.; Sullivan, C.T.

    1997-11-01

    Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

  1. ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer

    SciTech Connect

    Chen, Mingming; Zhang, Quanlin; Su, Longxing; Su, Yuquan; Cao, Jiashi; Zhu, Yuan; Wu, Tianzhun; Gui, Xuchun; Yang, Chunlei; Xiang, Rong; Tang, Zikang

    2012-09-15

    Highlights: ► High quality ZnO film with ultra-low background electron concentration is grown by plasma-assisted molecular beam epitaxy using Mg film as a buffer layer. ► High resolution X-ray diffraction and photoluminescence (PL) spectroscopy indicate a high degree of crystallization. ► Hall measurement shows a carrier concentration as low as ∼10{sup 14} cm{sup −3}. ► The mechanism of the improved crystallinity is discussed in detail. -- Abstract: High quality ZnO epilayer with background electron concentration as low as 2.6 × 10{sup 14} cm{sup −3} was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.029°. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal–semiconductor–metal (MSM) typed photodetector based on the material demonstrates a response of ∼43 A/W under the bias of 1 V and an ON/OFF ratio of 10{sup 4}. This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping.

  2. MBE growth and transport properties of silicon δ-doped GaAs/AlAs quantum well structures for terahertz frequency detection

    NASA Astrophysics Data System (ADS)

    Lachab, M.; Khanna, S. P.; Harrison, P.; Linfield, E. H.; Čerškus, A.; Kundrotas, J.; Seliuta, D.; Valušis, G.

    2010-04-01

    We present the electrical characterization of n-type GaAs/AlAs multiple quantum well (MQW) structures designed for terahertz (THz) radiation sensing at cryogenic temperatures. The samples were grown by solid source molecular beam epitaxy (MBE) and were δ-doped with silicon atoms at each potential well center. Temperature dependent Hall effect data show that (i) the conduction in these planar doped structures is thermally activated below 180 K, (ii) the free carriers sheet densities are near the metal-insulator transition, and (iii) the low temperature mobility is controlled by ionized impurities scattering. The study of the magneto-transport properties at 1.3 K further indicates that only the fundamental electronic sub-band of the two-dimensional electronic gas is populated. The MQW samples were then processed into lateral mesa-shaped photodetectors to investigate their spectral response in the THz frequency range. The preliminary experimental results for the proposed detection scheme, which involves transitions in the confined shallow donor impurity states, are described.

  3. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    NASA Astrophysics Data System (ADS)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-01

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 μm and 0.095 μm for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  4. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    SciTech Connect

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  5. The long noncoding RNAs PVT1 and uc002mbe.2 in sera provide a new supplementary method for hepatocellular carcinoma diagnosis.

    PubMed

    Yu, Jinyu; Han, Junqing; Zhang, Jian; Li, Guanzhen; Liu, Hui; Cui, Xianping; Xu, Yantian; Li, Tao; Liu, Juan; Wang, Chuanxi

    2016-08-01

    Hepatocellular carcinoma (HCC) is the most common primary malignancy of the liver in adults worldwide. Several studies have demonstrated that long noncoding RNAs (lncRNAs) are involved in the development of various types of cancer, including HCC. These findings prompted us to examine the detectability of lncRNAs in blood samples from patients with HCC. In this study, we explored the expression levels of 31 cancer-related lncRNAs in sera from 71 HCC patients and 64 healthy individuals by reverse transcription and quantitative polymerase chain reaction (RT-qPCR). We found that 25 lncRNAs could be detected in the serum and that 7 had significantly different expression levels. A 2-lncRNA signature (PVT1 and uc002mbe.2) identified by stepwise regression showed potential as a diagnostic marker for HCC. The area under the receiver operating characteristic (ROC) curve was 0.764 (95% CI: 0.684-0.833). The sensitivity and specificity values of this serum 2-lncRNA signature for distinguishing HCC patients from the healthy group were 60.56% and 90.62%, respectively. The diagnostic ability of the combination of the serum 2-lncRNA signature with alpha-fetoprotein (AFP) was much greater than that of AFP alone. The expression levels of the 2 lncRNAs were associated with clinical parameters including tumor size, Barcelona Clinic Liver Cancer (BCLC) stage, and serum bilirubin. PMID:27495068

  6. The MBE growth and optical quality of BaTiO{sub 3} and SrTiO{sub 3} thin films on MgO

    SciTech Connect

    McKee, R.A.; Specht, E.D.; Alexander, K.B.; Walker, F.J.

    1994-05-01

    High quality epitaxial BaTiO{sub 3} and SrTiO{sub 3} have been grown on MgO; stabilized at a one unit cell height; and grown to film thicknesses of 0.5--0.7 {mu}m. These relatively thick films remain adherent when thermally cycled between growth temperatures and room temperature, are crack free with high optical quality, and have both in-plane and out-of-plane X-ray rocking curves of 0.3--0.5{degree}. These films have been grown using molecular beam epitaxy (MBE) methods starting with the TiO{sub 2} layer of the perovskite structure. The TiO{sub 2}-layer/MgO interface uniquely satisfies electrostatic requirements for perovskite heteroepitaxy and provides the template structure that leads to the high quality films that are obtained. Wavelength dependence of optical loss has been characterized between 475 nm and 705 nm with loss coefficients < l dB/cm being obtained at the He-Ne wavelength.

  7. Structural and Magnetotransport Studies of MBE-grown Pn(Sn)Te films and PbTe:Bi/CdTe Quantum Wells

    NASA Astrophysics Data System (ADS)

    Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Malgorzata; Wojtowicz, Tomasz

    2014-03-01

    Recent studies confirmed the existence of topological crystalline insulators (TCIs), in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In the narrow-gap semiconductor TCIs, chemical potential can be tuned by modifications of crystal growth and/or annealing to yield n-type or p-type conductivity, which makes them especially well-suited for magnetotransport measurements. In this work, we have grown a series of Pb1-xSnxTe films and PbTe:Bi/CdTe QWs on CdTe/GaAs(100) substrates using MBE. Structural studies of these thin films were carried out using XRD and SEM techniques. XRD results shows satisfactory crystal quality of Pb(Sn)Te films grown on CdTe. SEM studies show the presence of inclusions in the films, indicating that the crystal quality still requires improvement. Magnetostransport studies of PbTe:Bi/CdTe QWs suggests that Bi acts as a donor in PbTe, and the electron mobility in the 2D electron gas in the QW depends on the growth conditions, such as substrate temperature. The study of Pb1-xSnxTe QWs is currently underway, and will also be discussed in this talk.

  8. The long noncoding RNAs PVT1 and uc002mbe.2 in sera provide a new supplementary method for hepatocellular carcinoma diagnosis

    PubMed Central

    Yu, Jinyu; Han, Junqing; Zhang, Jian; Li, Guanzhen; Liu, Hui; Cui, Xianping; Xu, Yantian; Li, Tao; Liu, Juan; Wang, Chuanxi

    2016-01-01

    Abstract Hepatocellular carcinoma (HCC) is the most common primary malignancy of the liver in adults worldwide. Several studies have demonstrated that long noncoding RNAs (lncRNAs) are involved in the development of various types of cancer, including HCC. These findings prompted us to examine the detectability of lncRNAs in blood samples from patients with HCC. In this study, we explored the expression levels of 31 cancer-related lncRNAs in sera from 71 HCC patients and 64 healthy individuals by reverse transcription and quantitative polymerase chain reaction (RT-qPCR). We found that 25 lncRNAs could be detected in the serum and that 7 had significantly different expression levels. A 2-lncRNA signature (PVT1 and uc002mbe.2) identified by stepwise regression showed potential as a diagnostic marker for HCC. The area under the receiver operating characteristic (ROC) curve was 0.764 (95% CI: 0.684–0.833). The sensitivity and specificity values of this serum 2-lncRNA signature for distinguishing HCC patients from the healthy group were 60.56% and 90.62%, respectively. The diagnostic ability of the combination of the serum 2-lncRNA signature with alpha-fetoprotein (AFP) was much greater than that of AFP alone. The expression levels of the 2 lncRNAs were associated with clinical parameters including tumor size, Barcelona Clinic Liver Cancer (BCLC) stage, and serum bilirubin. PMID:27495068

  9. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

    SciTech Connect

    Mahata, Mihir Kumar; Ghosh, Saptarsi; Jana, Sanjay Kumar; Bag, Ankush; Kumar, Rahul; Chakraborty, Apurba; Biswas, Dhrubes; Mukhopadhyay, Partha

    2014-11-15

    In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al{sub 2}O{sub 3}) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photoluminescence (RTPL). The effects of strain and doping on GaN and AlGaN layers were investigated thoroughly. The out-of-plane (‘c’) and in-plane (‘a’) lattice parameters were measured from RTRS analysis and as well as reciprocal space mapping (RSM) from HRXRD scan of (002) and (105) plane. The in-plane (out-of plane) strain of the samples were found to be −2.5 × 10{sup −3}(1 × 10{sup −3}), and −1.7 × 10{sup −3}(2 × 10{sup −3}) in GaN layer and 5.1 × 10{sup −3} (−3.3 × 10{sup −3}), and 8.8 × 10{sup −3}(−1.3 × 10{sup −3}) in AlGaN layer, respectively. In addition, the band structures of AlGaN/GaN interface were estimated by both theoretical (based on elastic theory) and experimental observations of the RTPL spectrum.

  10. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

    SciTech Connect

    Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A.T.; Krupanidhi, S.B.

    2012-06-15

    Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

  11. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

    SciTech Connect

    Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.; Coldea, A. I.; Hesjedal, T.; Baker, A. A.; Harrison, S. E.; Pushp, A.; Kellock, A. J.; Parkin, S. S. P.; Laan, G. van der

    2014-12-15

    We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  12. Influence of High Nitrogen Flux on Crystal Quality of Plasma-Assisted MBE Grown GaN Layers Using Raman Spectroscopy: Part-II

    SciTech Connect

    Asghar, M.; Hussain, I.; Islah u din; Saleemi, F.

    2007-05-09

    We have investigated lattice properties of plasma assisted MBE grown hexagonal GaN layers at varying nitrogen and gallium fluxes using Raman spectroscopy. Room temperature Raman spectra of Ga-rich layers and stoichiometric GaN are similar showing excitation modes at 434 cm-1, 567 cm-1 and 729 cm-1 identified as residual laser line, E{sub 2}{sup H} and A1(LO) mode, respectively. Similarity of Ga-rich and stoichiometric GaN layers is interpreted as the indication of comparable crystal quality of both GaN layers. In contrast, Raman scattering associated with N-rich GaN samples mere exhibit a broad band of excitations in the range of 250-650cm-1 leaving out A1(LO) mode. This typical observation along with intensity distribution of the peaks, is correlated with rough surface, bad crystal quality and high concentration of defects. Based on atomic displacement scheme, the broad band is identified as Ga- vacancies.

  13. Controlling the compositional inhomogeneities in AlxGa1-xN/AlyGa1-yN MQWs grown by PA-MBE: Effect on luminescence properties

    NASA Astrophysics Data System (ADS)

    Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, Anirban; Kumar, Deepak; Sridhara Rao, D. V.

    2016-04-01

    Al0.35Ga0.65N/Al0.55Ga0.45N MQWs were grown by PA-MBE using a range of group III/V flux ratios. TEM images indicate sharp interfaces and well/barrier widths of 1.5/2 nm. We observe that small variations of group III/V flux ratio cause dramatic variations in the room temperature photoluminescence (PL) spectra. In addition to band edge luminescence, multiple low energy PL peaks are observed for growths under excess group III conditions, which are absent for near-stoichiometric growth. Temperature dependent PL measurements indicate that at room temperature, emission occurs due to transitions at potential fluctuations generated by the presence of compositional inhomogeneity. These effects are dominant for growth under excess group III conditions due to the presence of a metallic layer on the growth surface during deposition. This can be eliminated by the use of an Indium surfactant during growth, which modifies the diffusion length of Ga and Al adatoms. Under these conditions, the optical properties of MQWs are relatively insensitive to variations in group III to V flux ratio and hence substrate temperature, thus making them suitable for industrial-scale fabrication of optoelectronic devices in the ultraviolet range.

  14. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Anand, Kritika; Barvat, Arun; Pal, Prabir; Singh, Dilip K.; Jewariya, Mukesh; Ragam, Srinivasa; Adhikari, Sonachand; Maurya, Kamlesh K.; Khanna, Suraj P.

    2016-04-01

    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power. A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.

  15. Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure

    NASA Astrophysics Data System (ADS)

    Méndez-García, Víctor-Hugo; Shimomura, S.; Gorbatchev, A. Yu.; Cruz-Hernández, E.; Vázquez-Cortés, D.

    2015-09-01

    The effects of doping with silicon (Si) AlGaAs layers grown by molecular beam epitaxy on GaAs (6 3 1)-oriented substrates as a function of the arsenic pressure (PAs) is presented and compared with layers grown on (1 0 0) oriented substrates. The surface texture of the AlGaAs (6 3 1) films is composed by nanogrooves, whose dimensions depend on PAs. On the contrary, the MBE growth on the (1 0 0) plane resulted on rough surfaces, without evidence of formation of terraces. Mobility and carrier density of AlGaAs:Si layers grown on substrates (6 3 1) were studied as a function of PAs. The doping type conversion from p-type to n-type as a function of the As pressure is corroborated for high index samples. All the films grown on (1 0 0) exhibited silicon n-type doping. These observations were related with the amphotericity of Si, where it acts as a donor impurity occupying Al or Ga-sites or as an acceptor when it takes an As-site, depending on the competition that the Si atoms encounters with As for any of these sites. The acceptor and donor lines close to the AlGaAs transition observed by photoluminescence spectroscopy (PL) were affected by the incorporation of Si. When increasing PAs the energy of the main PL peak is redshifted for n-type AlGaAs layers, but it is shifted back towards high energy once the conduction type conversion takes place. X-ray diffraction patterns revealed high crystalline quality for samples grown at the highest PAs.

  16. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

    NASA Astrophysics Data System (ADS)

    Zheng, Xin-He; Liu, San-Jie; Xia, Yu; Gan, Xing-Yuan; Wang, Hai-Xiao; Wang, Nai-Ming; Yang, Hui

    2015-10-01

    We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 mA/cm2, but a low open-circuit voltage range of 1.4 V˜1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy (SIMS) analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended GaAs n++/p++ junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ˜ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening, which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell. Project supported by the SINANO-SONY Joint Program (Grant No. Y1AAQ11001), the National Natural Science Foundation of China (Grant No. 61274134), the USCB Start-up Program (Grant No. 06105033), and the International Cooperation Projects of Suzhou City, China (Grant No. SH201215).

  17. Anomalous elongation of c-axis of GaN on Al2O3 grown by MBE using NH3-cluster ions

    NASA Astrophysics Data System (ADS)

    Ichinohe, Yoshihiro; Imai, Kazuaki; Suzuki, Kazuhiko; Saito, Hiroshi

    2016-02-01

    GaN thin films were grown on Al2O3 (0001) by MBE using NH3-clusters either ionized with the energy of 4-7 eV/molecule (ionized Cluster Beam, i-CB) or un-ionized with the energy of about 0.1 eV/molecule (neutral Cluster Beam, n-CB) at growth temperatures ranging from 390 to 960 °C. The c-axis is extremely elongated but the a-axis is shrunken at the initial growth stage (up to the film thickness of about 10 nm) in GaN grown by the mixture of n- and i-CB under N-rich condition. The films thicker than 30 nm have the relaxed a- and c-axis lengths close to the unstrained values and obey the Poisson relation. GaN grown by i-CB under Ga-rich condition have the relaxed lattice constants obeying the Poisson relation for the film as thin as 6 nm. In GaN grown by the cluster beam (CB) which is not ionized intentionally, both a- and c-axis lengths are almost independent of the film thickness, having nearly the same values as those of the unstrained samples. These characteristics can be ascribed to the nature of interface between the nitrided Al2O3 substrate and epilayer. It is concluded that the films grown by i-CB bond firmly to underlay AlN than the films by n-CB and CB.

  18. Effects of MgO buffer annealing on optical and electrical quality of P-MBE grown ZnO films on c-sapphire

    NASA Astrophysics Data System (ADS)

    Setiawan, A.; Yao, T.

    2016-04-01

    Zinc oxide (ZnO) has been attracting much attention because of its potential applications in photonic and optoelectronic devices. In this present study, we investigated the effect of MgO buffer annealing on the optical and electrical quality of P-MBE grown ZnO films on c-sapphire with MgO buffer layer. The optical quality was observed by low-temperature PL (photoluminescence) measurement in the near band edge emission region measured at 10K and at 77K. The emission line located at 3.368eV dominates the spectrum in both samples (ZnO with and without MgO buffer annealing) at 10K and 77K. This emission can be divided into two peaks, 3.367eV and 3.363eV and assigned as I2 (ionized donor bound excitons emission) and I4 (Hydrogen donor related emission), respectively. The relative intensity of these donor bound exactions to free exaction emission of the sample without MgO buffer annealing is greater than that of the sample with MgO buffer annealing. Comparison of the PL spectra of ZnO with and without annealing revealed that the intensity of free exciton emission from the sample with MgO buffer annealing is twice of that from the sample without annealing. We also found that the intensity of deep-level broad emission is reduced by about 1/3 by MgO-buffer annealing. Hence, the decrease of deep level emission intensity and the increase of free exciton emission intensity by annealing of MgO buffer corresponds to the reduction of defects of the ZnO film. The PL properties also suggest that there are fewer nonradiative recombination centers in ZnO layers with MgO buffer annealing than those in ZnO layers grown without MgO buffer annealing. The electrical quality was measured by room temperature Hall measurements. We found that the samples have a background n-type carrier concentration. The ZnO samples with MgO buffer annealing has a carrier concentration of 1.17×1017 cm-3 and Hall mobility of 120 cm2/V.s, while the ZnO sample without MgO buffer annealing has a carrier

  19. Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

    NASA Astrophysics Data System (ADS)

    Edmunds, C.; Tang, L.; Li, D.; Cervantes, M.; Gardner, G.; Paskova, T.; Manfra, M. J.; Malis, O.

    2012-05-01

    We have investigated near-infrared absorption and photocurrent in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by molecular-beam epitaxy (MBE) on low-defect GaN substrates for infrared device applications. The AlGaN/GaN heterostructures were grown under Ga-rich conditions at 745°C. Material characterization via atomic force microscopy and high-resolution x-ray diffraction indicates that the AlGaN/GaN heterostructures have smooth and well-defined interfaces. A minimum full-width at half-maximum of 92 meV was obtained for the width of the intersubband absorption peak at 675 meV of a 13.7 Å GaN/27.5 Å Al0.47Ga0.53N superlattice. The variation of the intersubband absorption energy across a 1 cm × 1 cm wafer was ±1%. An AlGaN/GaN-based electromodulated absorption device and a quantum well infrared detector were also fabricated. Using electromodulated absorption spectroscopy, the full-width at half-maximum of the absorption peak was reduced by 33% compared with the direct absorption measurement. This demonstrates the suitability of the electromodulated absorption technique for determining the intrinsic width of intersubband transitions. The detector displayed a peak responsivity of 195 μA/W at 614 meV (2.02 μm) without bias. Optimal MBE growth conditions for lattice-matched AlInN on low-defect GaN substrates were also studied as a function of total metal flux and growth temperature. A maximum growth rate of 3.8 nm/min was achieved while maintaining a high level of material quality. Intersubband absorption in AlInN/GaN superlattices was observed at 430 meV with full-width at half-maximum of 142 meV. Theoretical calculations of the intersubband absorption energies were found to be in agreement with the experimental results for both AlGaN/GaN and AlInN/GaN heterostructures.

  20. Capping and decapping of MBE grown GaAs(001), Al 0.5Ga 0.5As(001), and AlAs(001) investigated with ASP, PES, LEED, and RHEED

    NASA Astrophysics Data System (ADS)

    Bernstein, R. W.; Borg, A.; Husby, H.; Fimland, B.-O.; Grepstad, J. K.

    Arsenic capping and regeneration of MBE-grown GaAs(001), Al 0.5Ga 0.5As(001), and AlAs(001) epilayer surfaces were examined with Auger sputter profiling (ASP), synchrotron radiation and X-ray photoelectron spectroscopy (PES), LEED, and RHEED. It is found that clean, ordered surfaces of different As/Ga(Al) compositions and different surface reconstructions can be prepared in a controlled manner after long-term storage in air, by thermal desorption of the As cap at appropriate annealing temperatures. A protective film of amorphous arsenic was deposited in situ with both As 2 and As 4 molecular beams onto cold substrates. The recorded Auger depth profiles unveil capping layer thicknesses from 0.3 to 3 μm, the thicker for depositions using the As 2 dimer source. The As 3+ surface oxide, formed immediately upon exposure of the passivated wafers to air, remains on the order of 10Åthick, even after storage in atmosphere for several months. Core level photoemission shows selective desorption of this oxide upon annealing in UHV at 250°C. Further heating at 350°C evaporates the protective arsenic cap, and clean, As-terminated Al xGa 1- xAs(001) surfaces with a regular arrayof chemisorbed excess As sbnd As dimers prevail. The recorded LEED and RHEED patterns show a c(4 × 4) surface reconstruction for GaAs(001) and Al 0.5Ga 0.5As(001), whereas this structural phase was observed with RHEED only for the highly reactive AlAs(001) surface. Subsequently annealing in UHV at 450°C causes desorption of the chemisorbed surface arsenic and a concurrent transition from c(4 × 4) to the (2 × 4)/c(2 × 8) surface of As stabilized MBE-grown Al xGa 1- xAs(001). With AlAs(001), surface Al oxidation was observed immediately after annealing at 450°C, in spite of carefully controlled UHV environments

  1. Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane

    SciTech Connect

    Ratnikov, V. V. Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

    2013-12-15

    The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

  2. Adsorption-controlled growth of ferroelectric PbTiO{sub 3} and Bi{sub 4}Ti{sub 3}O{sub 12} films for nonvolatile memory applications by MBE

    SciTech Connect

    Theis, C.D.; Yeh, J.; Schlom, D.G.; Hawley, M.E.; Brown, G.W.

    1997-09-01

    Epitaxial PbTiO{sub 3} and Bi{sub 4}Ti{sub 3}O{sub 12} thin films have been grown on (100) SrTiO{sub 3} and (100) LaAlO{sub 3} substrates by reactive molecular beam epitaxy (MBE). Titanium is supplied to the film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTiO{sub 3} and three monolayers for the growth of Bi{sub 4}Ti{sub 3}O{sub 12}. Lead, bismuth, and ozone are continuously supplied to the surface of the depositing film. Growth of phase pure, c-axis oriented epitaxial films with bulk lattice constants is achieved using an overpressure of these volatile species. With the proper choice of substrate temperature (600--650 C) and ozone background pressure (P{sub O{sub 3}} = 2 {times} 10{sup {minus}5} Torr), the excess of the volatile metals and ozone desorb from the surface of the depositing film leaving a phase-pure stoichiometric crystal. The smooth PbTiO{sub 3} surface morphology revealed by atomic force microscopy (AFM) suggests that the PbTiO{sub 3} films grow in a layer-by-layer fashion. In contrast the Bi{sub 4}Ti{sub 3}O{sub 12} films contain islands which evolve either continuously or around screw dislocations via a spiral-type growth mechanism.

  3. Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 μm laser structures on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.

    1999-05-01

    The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 2.0-2.5 μm wavelength range has been investigated. The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y=0.05 and y=0.20. Broad area AlGaAsSb/GaInAsSb single-quantum well laser diodes with quasi-cw output at room temperature at an emission wavelength of 2.03 μm and a threshold current density of 515 A/cm 2 for 1370 μm long and 70 μm wide devices have been fabricated. In order to shift the emission wavelength of the laser structures to longer wavelengths, the growth of lattice matched AlGaAsSb/GaInAsSb laser core structures with different In and As mole fractions in the quantum wells has been investigated.

  4. [Involution of the mammary gland. Enzyme histochemistry, elektron microscopy and radioautography (author's transl)].

    PubMed

    Korfsmeier, K

    1976-01-01

    A study has been made of the progress of involution of the mouse and rat mammary gland using histologic, electron microscopic, histochemical and autoradiographic methods. Particular emphasis has been placed on the morphology, metabolic alterations and activities of histochemically identifiable enzymes, and on the pharmacologic effects of lactation inhibiting agents and cytostatic drugs on lactation and involution. In order to allow a systematic investigation, involution was initiated in rats and mice by ligation of individual gland ducts at various time intervals. Both lactating glands and glands in different phases of involution were thus available in a given animal. The most important observation was that involution, which altogether takes approximately 2 weeks to be complete, involves a three-phase process, each phase being clearly distinguishable by morphologic and histochemical criteria. The first phase comprises approximately 4 days during which production of milk may be reinitiated. The second phase starts on day 5 of involution and constitutes the period of involution per se characterized by appreciable parenchymal cell degradation. The third phase, which starts around day 10, is the period of reorganization to the resting mammary gland. Early in the first phase of involution, substantial alveolar enlargement due to engorgement with milk, together with epithelial flattening, are prominent features. By day 3, the glandular contents decrease again in volume, the number of glandular cells and the constituent cytoplasmic organelles remaining unchanged during this period, except for the diminished appearance of fat droplets. In addition to normal appearing vacuoles with only occasional or sparse protein granules, giant vacuoles containing, in part, several hundred casein granules are found. Their formation appears to be due to increased stacking of granules in distended vacuoles prior to dissociation from the Golgi apparatus. In addition, however, the enhanced reactions of alP (alkaline phosphatase) and ATPase, which are found in the apical plasmalemma, are suggestive of resorptive activities. Protein particles absorbed from the glandular lumen equally appear to have a capacity for fusing into large vacuoles. The large protein granule-containing vacuoles regularly exhibit intense beta-Glu activity. This enzyme would appear to contribute actively to the degradation of excess milk during the first phase of involution. Autoradiographic studies reveal that the synthesis and release of proteins into the secretion is maintained for 3 days. While 3H-tyrosine uptake by the alveolar cells continues unchanged, the incorporation of 3H-palmitic acid into glandular lipoids, and of 3H-fucose into glandular polysaccharides is virtually blocked completely. An immediate reaction of the lipoid metabolism is also indicated by the decrease in 3HBDH activity on the first day of involution... PMID:186847

  5. 77 FR 64519 - Magnesium Elektron; Analysis of Agreement Containing Consent Orders To Aid Public Comment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    ...The consent agreement in this matter settles alleged violations of federal law prohibiting unfair or deceptive acts or practices or unfair methods of competition. The attached Analysis to Aid Public Comment describes both the allegations in the draft complaint and the terms of the consent order--embodied in the consent agreement--that would settle these...

  6. Volatile Organic Analyzer (VOA) in 2006: Repair, Revalidation, and Restart of Elektron Even

    NASA Technical Reports Server (NTRS)

    Limero, Thomas

    2007-01-01

    The Volatile Organic Analyzer (VOA) had been providing valuable data on trace contaminants in the atmosphere of the International Space Station (ISS) from January 2002 through May 2003. Component temperature errors, detected by the VOA s software, shut down the unit in May 2003, but in early 2005 on orbit diagnostics verified fuse failures had disabled both VOA channels. An in-flight maintenance (IFM) session in December 2005 returned the VOA to an operational mode by January 2006. This paper will present the on-orbit data from 2006 that were used to revalidate the VOA, and provide an overview of the VOA s contributions during the Elecktron contingency event that occurred on ISS in September 2006.

  7. Superlattice structures grown by metalorganic MBE

    NASA Astrophysics Data System (ADS)

    Tokumitsu, E.; Katoh, T.; Sung, C. P.; Sandhu, A.; Kimura, R.; Konagai, M.; Takahashi, K.

    1986-08-01

    The metalorganic molecular beam epitaxial (MOMBE) growth of GaAs and (GaAl)As using triethylgallium (TEG) and triethylaluminum (TEA) has been studied. GaAs/GaAlAs multi quantum well (MQW) heterostructures were fabricated and it was found that the photoluminescence peak energy at room temperature agreed with calculated values. Furthermore, a new technique to grow a nipi superlattice structure was proposed and as a trial growth a n-GaAs/n +-GaAs multilayer was prepared by applying an alternating ionization voltage to hydrogen.

  8. MBE Growth of Graded Structures for Polarized Electron Emitters

    SciTech Connect

    Moy, Aaron; Maruyama, T.; Zhou, F.; Brachmann, A.

    2009-08-04

    SVT Associates, in collaboration with SLAC, has investigated two novel photocathode design concepts in an effort to increase polarization and quantum efficiency. AlGaAsSb/GaAs superlattice photocathodes were fabricated to explore the effect of antimony on device operation. In the second approach, an internal electrical field was created within the superlattice active layer by varying the aluminum composition in AlGaAs/GaAs. A 25% increase in quantum efficiency as a result of the gradient was observed.

  9. MBE Growth of GaAs Whiskers on Si Nanowires

    SciTech Connect

    Maxwell Andrews, Aaron

    2010-01-04

    We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

  10. The Cleaning of Indium Phosphide Substrates for Growth by MBE

    NASA Astrophysics Data System (ADS)

    Hofstra, Peter

    1995-11-01

    A novel technique of using an in-situ ECR generated H-plasma to produce high quality surfaces on InP substrates, for growth of n-and p-type InP layers by GSMBE, has been investigated. The initial substrate surface quality determines the quality of the subsequently grown layers and therefore, the cleaning procedure is of critical importance. The standard approach entails a thermal desorption of a passivating oxide; however, this technique leaves carbon on the surface and, because oxides may vary in composition depending on the growth conditions, a consistent temperature for desorption may not be obtained. The desorption process is also dependent on the atmosphere in which it is carried out; i.e. whether an overpressure of P_2 or As _2 is used. Thermal desorption of oxides from InP requires the substrate to reach temperatures higher than normal GSMBE growth temperatures which can lead to substrate decomposition and, for regrowth applications, can alter dopant profiles and layer composition in ternary and quaternary layer growths. As an alternative, H-plasmas in separate vacuum chambers have been used to remove oxides from InP but this typically produces highly defective substrates due to a loss of phosphorus from the substrate. In this work the combination of an in-situ H-plasma with a stabilizing atmosphere of P_2 is used for the removal of oxides at temperatures equal to growth temperature and below. The mechanism involved in the thermal desorption of an oxide is first clarified and this procedure is compared with oxide removal by H-plasma etch in a phosphorus atmosphere. The ECR source can produce various plasma modes which have been thoroughly characterized. The effect of the different plasma conditions on clean InP is determined. These modes have different properties which result in different oxide etch rates. Various modes are compared and the mechanism of oxide removal is documented. As an alternative to oxide growth S-passivation has recently received attention as a surface passivation technique. Application of this surface, with and without H-plasma cleaning, has been investigated. The above treatments and other wet chemical surface treatments are compared to determine the optimal surface cleaning technique. The results indicate that thermal desorptions are driven by reaction with phosphorus from the substrate and therefore require high temperatures to promote significant phosphorus evaporation from the substrate. A H-plasma etch of the oxide is driven by the presence of atomic M in the plasma and results in the formation of water. Oxide removal rates were determine at various temperatures from 250^circC-490^ circC. The plasma etch was found to remove carbon contamination from the surface whereas, thermal desorptions do not. Defect levels in the underlying InP are sensitive to the plasma properties but with careful choice of plasma conditions defect states can be minimized. An optimal surface cleaning procedure has been developed which involves a UV-ozone treatment and H-plasma cleaning, resulting in interfaces free of electrically active defects in n -type material and a defect concentration of 8times10 ^{11} cm^{ -2} in p-type material.

  11. High growth speed of gallium nitride using ENABLE-MBE

    NASA Astrophysics Data System (ADS)

    Williams, J. J.; Fischer, A. M.; Williamson, T. L.; Gangam, S.; Faleev, N. N.; Hoffbauer, M. A.; Honsberg, C. B.

    2015-09-01

    Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray ω scans of GaN (0002) have FWHM in all samples less than 300 arc sec. Cathodoluminescence shows radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates.

  12. MBE-grown metamorphic lasers for applications at telecom wavelengths

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Kettler, T.; Posilovic, K.; Bimberg, D.; Karachinsky, L. Ya.; Gladyshev, A. Yu.; Maximov, M. V.; Novikov, I. I.; Shernyakov, Yu. M.; Zhukov, A. E.; Ustinov, V. M.; Kovsh, A. R.

    2007-04-01

    We have studied growth phenomena and structural and optical properties of metamorphic (MM) quantum dots (QDs) and QD lasers emitting in the 1.4-1.5 μm range. InAs/InGaAs QDs were grown on top of (In,Ga)As buffer layers deposited on GaAs (1 0 0) substrates. The wavelength of the QDs could be adjusted in the 1400-1600 nm spectral range by changing the composition of the (In,Ga)As matrix layer and by the amount of InAs deposited to form QDs. An additional wavelength shift can be achieved by strained-layer (In,Ga,Al)As overgrowth of the QDs. It is found that high-performance degradation-robust operation of the devices can be achieved through minimization of the defect density in the matrix material and within the QD sheets. A defect-reduction technique involving steps of strain-sensitive overgrowth and selective evaporation of the material in the defect-related areas was applied, leading to both elimination of dislocated clusters and blocking of propagating defects. MM QD lasers exhibited emission wavelength in the 1.4-1.5 μm range with a differential quantum efficiency of about ˜50% and pulsed power up to 7 W, limited by catastrophic optical mirror damage. The narrow-stripe lasers operate in a single transverse mode withstanding continuous wave current densities above 20 kA cm -2 without irreversible degradation. A maximum single mode continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Single-mode devices with as-cleaved facets are tested for 60 °C (800 h) and 70 °C (200 h) junction temperature. No noticeable degradation has been observed at 50 mW cw single mode output power, clearly manifesting for the first time degradation-free laser diodes on foreign substrates. The technology opens a way for integration of various III-V materials with silicon or germanium substrates for the next generation of microprocessors, optical interconnects and cascaded solar cells.

  13. MBE growth of GaP on a Si substrate

    SciTech Connect

    Sobolev, M. S. Lazarenko, A. A.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu.

    2015-04-15

    It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

  14. Native defects in MBE-grown CdTe

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  15. InP based QCL in MBE production machine

    NASA Astrophysics Data System (ADS)

    Garcia, Michel; Vermersch, Francois Julien; Marcadet, Xavier; Bansropun, Shailendra; Carras, Mathieu; Wilk, Arnaud; Chaix, Christine; Sirtori, Carlo

    2006-02-01

    Quantum Cascade Lasers (QCL), emitting between 5 and 9 μm, have been realised with a view to achieving QCLs fabrication on a production scale. The growth of the structures was carried out in a multi-wafer RIBER 49 system (13 x 2" platen), and the processing sequence involved an Inductively Coupled Plasma (ICP) step for homogeneity and reproducibility purposes. To validate the approach used, a first batch of lasers, emitting around 9μm, based on a design already published [1], has been realised. State of the art performance on these devices (J th = 4.2 kA cm -2, η = 304 mW A -1, P max = 690 mW) has been achieved. A second set of strained balanced structures, emitting around 5.4μm, has been demonstrated, working in pulsed operation at room temperature(J th = 3.9 kA cm -2, η = 362 mW A -1, P max = 420 mW).

  16. MBE Growth of Graded Structures for Polarized Electron Emitters

    SciTech Connect

    Not Available

    2010-08-25

    SVT Associates, in collaboration with SLAC, have investigated two novel photocathode design concepts in an effort to increase polarization and quantum efficiency. AlGaAsSb/GaAs superlattice photocathodes were fabricated to explore the effect of antimony on device operation. In the second approach, an internal electrical field was created within the superlattice active layer by varying the aluminum composition in AlGaAs/GaAs. A 25% increase in quantum efficiency as a result of the gradient was observed.

  17. Program plan for the MBE-4 multiple beam experiment

    SciTech Connect

    Avery, R.T.

    1985-02-01

    The technical description treats the arrangement of the Injector System (made up of an existing High Voltage Marx Generator, a new Four-beam Source array and a Beam Conditioning Unit for matching and steering) and the Accelerator Apparatus which contains the 24 shaped-pulsed accelerating units. Flexibility in diagnostic capability and physics experiments has been maintained insofar as possible.

  18. Picosecond spectroscopy of hydrogenated MBE-GaAs

    NASA Astrophysics Data System (ADS)

    Capizzi, M.; Coluzza, C.; Frankl, P.; Frova, A.; Colocci, M.; Gurioli, M.; Vinattieri, A.; Sacks, R. N.

    1991-04-01

    Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAlAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime - up to a factor of 3 - for moderate hydrogenation, followed by a sharp decrease below the value for the untreated sample, for higher H doses. Luminescence efficiency shows a consistent behavior. Incorporation of H generates a strong D-A band falling ˜64 meV below the gap energy. The behavior for heavy hydrogenation indicates the formation of a new type of deep defect, not ascribed to surface damage, because of the protective GaAlAs layer, plus the fact that the excitonic emission of the latter shows no variation.

  19. Progress in MBE grown type-II superlattice photodiodes

    NASA Technical Reports Server (NTRS)

    Hill, Cory J.; Li, Jian V.; Mumolo, Jason M.; Gunapala, Sarath D.

    2006-01-01

    We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.

  20. Development of MBE II-VI Epilayers on GaAs(211)B

    NASA Astrophysics Data System (ADS)

    Jacobs, R. N.; Nozaki, C.; Almeida, L. A.; Jaime-Vasquez, M.; Lennon, C.; Markunas, J. K.; Benson, D.; Smith, P.; Zhao, W. F.; Smith, D. J.; Billman, C.; Arias, J.; Pellegrino, J.

    2012-10-01

    Large-area, low-cost substrates are envisioned for next-generation HgCdTe infrared focal-plane arrays (IRFPA). Si, GaAs, Ge, and InSb have been previously examined as potential candidates. Fabrication of IRFPAs based on these substrates is limited by fundamental materials properties that potentially lead to lower detector performance and operability. Lattice and thermal mismatch between the substrate and epilayer are just two of several material factors that must be considered. We have reviewed these factors in the context of more recent data, and determined it worthwhile to revisit the use of GaAs substrates for epitaxial growth of HgCdTe. Our study starts with an evaluation of the surface quality (epireadiness) of commercially available (211) B-oriented GaAs substrates. Molecular beam epitaxial growth of CdTe buffer layers and subsequent HgCdTe absorber layers are performed in separate vacuum-interconnected chambers. The importance of optimization of the CdTe buffer layer growth for high-quality HgCdTe is detailed through surface morphology and x-ray studies. x-Ray diffraction rocking-curve full-width at half-maximum values as low as 52 arcsec have been obtained. Long-wave infrared Hg1- x Cd x Te ( x = 0.23) has been grown on these buffer layers, producing cross-hatch-dominated surface morphologies, with dislocation densities as low as ˜3 × 106 cm-2. We have also obtained (for optimized layers), 80-K Hall-effect n-type carrier concentration and electron mobility of approximately ~1.5 × 1015 cm-3 and 1 × 105 cm2 V-1 s-1, respectively. Finally, we briefly compare GaAs and Si in light of our preliminary investigation.

  1. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Greenlee, Jordan D.; Gunning, Brendan; Feigelson, Boris N.; Anderson, Travis J.; Koehler, Andrew D.; Hobart, Karl D.; Kub, Francis J.; Doolittle, W. Alan

    2016-01-01

    Multicycle rapid thermal annealing (MRTA) is shown to reduce the defect density of molecular beam epitaxially grown AlN films. No damage to the AlN surface occurred after performing the MRTA process at 1520°C. However, the individual grain structure was altered, with the emergence of step edges. This change in grain structure and diffusion of AlN resulted in an improvement in the crystalline structure. The Raman E2 linewidth decreased, confirming an improvement in crystal quality. The optical band edge of the AlN maintained the expected value of 6.2 eV throughout MRTA annealing, and the band edge sharpened after MRTA annealing at increased temperatures, providing further evidence of crystalline improvement. X-ray diffraction shows a substantial improvement in the (002) and (102) rocking curve FWHM for both the 1400 and 1520°C MRTA annealing conditions compared to the as-grown films, indicating that the screw and edge type dislocation densities decreased. Overall, the MRTA post-growth annealing of AlN lowers defect density, and thus will be a key step to improving optoelectronic and power electronic devices. [Figure not available: see fulltext.

  2. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  3. In Memory of Dorothy Heathcote, MBE (29 August 1926 to 8 October 2011)

    ERIC Educational Resources Information Center

    Saxton, Juliana; Miller, Carole

    2012-01-01

    In this article, the authors aim to provide a multifaceted lens on to Dorothy Heathcote's enormous influence on the field of drama education. They choose to order the reminiscences historically, focusing on Heathcote's consistency of passion and purpose. The anecdotes, lesson descriptions, and reminiscences capture her voice, her energy, and her…

  4. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  5. Simple self-gettering differential-pump for minimizing source oxidation in oxide-MBE environment

    SciTech Connect

    Kim, Yong-Seung; Bansal, Namrata; Oh, Seongshik

    2011-07-15

    Source oxidation of easily oxidizing elements such as Ca, Sr, Ba, and Ti in an oxidizing ambient leads to their flux instability and is one of the biggest problems in the multielemental oxide molecular beam epitaxy technique. Here, the authors report a new scheme that can completely eliminate the source oxidation problem: a self-gettering differential pump using the source itself as the pumping medium. The pump simply comprises a long collimator mounted in front of the source in extended port geometry. With this arrangement, the oxygen partial pressure near the source was easily maintained well below the source oxidation regime, resulting in a stabilized flux, comparable to that of an ultrahigh-vacuum environment. Moreover, this pump has a self-feedback mechanism that allows a stronger pumping effectiveness for more easily oxidizing elements, which is a desired property for eliminating the source oxidation problem.

  6. Formation of pyramid-like nanostructures in MBE grown Si films on Si(001)

    SciTech Connect

    Galiana, Natalia; Martin, Pedro-Pablo; Garzon, L.; Rodriguez-Cañas, E.; Munuera, Carmen; Esteban-Betegon, F.; Varela del Arco, Maria; Ocal, Carmen; Alonso, Maria; Ruiz, Ana

    2010-01-01

    The growth of Si homoepitaxial layers on Si(001) substrates by molecular beam epitaxy is analyzed for a set of growth conditions in which diverse nanometric scale features develop. Using Si substrates prepared by exposure to HF vapor and annealing in ultra high vacuum, a rich variety of surface morphologies is found for different deposited layer thicknesses and substrate temperatures in a reproducible way, showing a critical dependence on both. Arrays of 3D islands (truncated pyramids), percolated ridge networks and square pit (inverted pyramids) distributions are observed. We analyze the obtained arrangements and find remarkable similarities to other semiconductor though heteroepitaxial systems. The nano-scale entities (islands or pits) display certain self assembly and ordering, concerning size, shape and spacing. Film growth sequence follows the islands-coalescence-2D growth pathway, eventually leading to optimum flat morphologies for high enough thickness and temperature.

  7. MBE grown Ga2O3 and its power device applications

    NASA Astrophysics Data System (ADS)

    Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu

    2013-09-01

    N-type gallium oxide (Ga2O3) homoepitaxial thick films were grown on β-Ga2O3 (010) substrates by molecular beam epitaxy. The epitaxial growth rate was increased by more than 10 times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 1016-1019 cm-3 by changing the Sn doping concentration. Schottky barrier diodes (SBDs) and metal-semiconductor field-effect transistors (MESFETs) on β-Ga2O3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited good device characteristics such as an ideality factor of 1.13, and high breakdown voltage about 125 V. The MESFETs also exhibited excellent characteristics such as a perfect pinch-off of the drain current, off-state breakdown voltage over 250 V, high on/off drain current ratio of around 104, and small gate leakage current. These device characteristics clearly indicate the great potential of Ga2O3 as a high-power device material.

  8. Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

    NASA Technical Reports Server (NTRS)

    Lieneweg, U.; Bean, J. C.

    1984-01-01

    Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

  9. Surface defect states in MBE-grown CdTe layers

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Fronc, Krzysztof; Tkaczyk, Zbigniew; Chusnutdinow, Sergij; Karczewski, Grzegorz

    2014-02-21

    Semiconductor surface plays an important role in the technology of semiconductor devices. In the present work we report results of our deep-level transient spectroscopy (DLTS) investigations of surface defect states in nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. We observed a deep-level trap associated with surface states, with the activation energy for hole emission of 0.33 eV. DLTS peak position in the spectra for this trap, and its ionization energy, strongly depend on the electric field. Our measurements allow to determine a mechanism responsible for the enhancement of hole emission rate from the traps as the phonon-assisted tunnel effect. Density of surface defect states significantly decreased as a result of passivation in ammonium sulfide. Capacitance-voltage measurements confirmed the results obtained by the DLTS technique.

  10. Surface defects induced by impurities in MBE-grown HgCdTe

    NASA Astrophysics Data System (ADS)

    Fu, Xiangliang; Wang, Weiqiang; Wei, Qingzhu; Wu, Jun; Chen, Lu; Wu, Yan; He, Li

    2008-03-01

    Surface defects of molecular beam epitaxially grown HgCdTe are the major concern in developing large format infrared focal plane arrays. Voids were usually observed on the HgCdTe surfaces as previously reported, they were originated either from the improper substrates preparation or from the growth condition. However, the defects formation with impurities has not been addressed. This paper presents our recent observation on defects induced by the impurities involved in the mercury beam fluxes. These defects can be craters or bumps, having a spatially clustering feature. To identify the origin of these kinds of defects, experiments were performed on HgCdTe as well as CdTe with mercury flux, and the defects were observed and analyzed by using SEM and EDAX. The result, for the first time, confirmed that impurities in the mercury beam were responsible to the formation of surface defects.

  11. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1990-01-01

    The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).

  12. Optical properties of ZnxMg1-xSe/GaAs heterojunctions grown by MBE

    NASA Astrophysics Data System (ADS)

    Bala, Waclaw; Glowacki, Grzegorz; Gapinski, Adam

    1997-06-01

    This works focuses on the study of optical properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on n-type (001) GaAs substrates. Luminescence, reflectivity and Raman spectroscopy are studied. Photoluminescence spectra of the samples are dominated by blue emission bands, which can be associated with radiative recombination of free excitons. The reflectivity spectra were used to investigate the refractive index value and the thickness of the layers. Moreover the temperature dependence of the band-gap energy of ZnxMg1-xSe epilayers was determined. Using Raman spectroscopy we can obtain information about two kinds of longitudinal optical phonon modes observed at room temperature, whose frequencies and intensities depend characteristically on Mg content.

  13. Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry

    NASA Astrophysics Data System (ADS)

    Volkov, P. V.; Goryunov, A.. V.; Lobanov, D. N.; Luk'yanov, A. Yu.; Novikov, A. V.; Tertyshnik, A. D.; Shaleev, M. V.; Yurasov, D. V.

    2016-08-01

    Differences in heating of silicon and silicon-on-insulator (SOI) substrates in molecular beam epitaxy were revealed by low-coherence tandem interferometry. Using this technique the interference effects which impede the correct evaluation of SOI substrate temperature by infrared pyrometers can be eliminated and so the reliable temperature readout can be achieved. It was shown that at the same thermocouple and heater power settings the real temperature of SOI substrates is higher than of silicon ones and the difference may be as high as 40-50 °C at temperatures close to 600 °C. It is supposed that such effect is caused by the additional absorption of heater radiation by the buried oxide layer in the mid-infrared range. Independent proof of this effect was obtained by growing on both types of substrates a series of structures with self-assembled Ge nanoislands whose parameters are known to be very temperature sensitive. The proposed low-coherence interferometry technique provides precise real-time control of the growth temperature and so allows formation of SiGe nanostructures with desired parameters.

  14. Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

    NASA Astrophysics Data System (ADS)

    Takatori, Satoru; Minh, Pham Hong; Estacio, Elmer; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Bailon-Somintac, Michelle; Somintac, Armando; Defensor, Michael; Gabayno, Jacqueline; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Garcia, Alipio; Ponseca, Carlito, Jr.; Salvador, Arnel; Sarukura, Nobuhiko

    2010-05-01

    We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that the terahertz emission from MDH's can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters; rivaling the emission intensity of p-type bulk InAs.

  15. MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

    NASA Astrophysics Data System (ADS)

    Richards, Robert D.; Bastiman, Faebian; Roberts, John S.; Beanland, Richard; Walker, David; David, John P. R.

    2015-09-01

    A series of GaAsBi/GaAs multiple quantum well p-i-n diodes were grown by molecular beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode, with an increase in the cross-hatching associated with strain relaxation for the diodes containing more than 40 quantum wells. X-ray diffraction ω-2θ scans of the (004) reflections showed that multiple quantum well regions with clearly defined well periodicities were grown. The superlattice peaks of the diodes containing more than 40 wells were much broader than those of the other diodes. The photoluminescence spectra showed a redshift of 56 meV and an attenuation of nearly two orders of magnitude for the 54 and 63 well diodes. Calculations of the quantum confinement and strain induced band gap modifications suggest that the wells in all diodes are thinner than their intended widths and that both loss of quantum confinement and strain probably contributed to the observed redshift and attenuation in the 54 and 63 well diodes. Comparison of this data with that gathered for InGaAs/GaAs multiple quantum wells, suggests that the onset of relaxation occurs at a similar average strain-thickness product for both systems. Given the rapid band gap reduction of GaAsBi with Bi incorporation, this data suggests that GaAsBi is a promising photovoltaic material candidate.

  16. Properties of MBE-grown NbO2 thin films

    NASA Astrophysics Data System (ADS)

    Demkov, Alex; O'Hara, Andy; Posadas, Agham

    2014-03-01

    Niobium dioxide or NbO2 a sister compound of the more celebrated VO2, belongs to the class of transition metal oxides that undergo a temperature-driven metal-to-insulator transition. Using density functional theory, we explore the electronic properties of both the high-temperature metallic rutile and the low-temperature insulating distorted rutile phases. We investigate the nature of the transition and predict a large carrier concentration change even at the high transition temperature of 1080 K. We also grew thin NbO2 films on LSAT(111) single crystal substrates using molecular beam epitaxy. The films show very good crystallinity with a single out-of-plane orientation by x-ray diffraction, and exhibit a smooth surface with the presence of three epitaxial domains as observed by reflection high energy electron diffraction. The NbO2 stoichiometry is confirmed by x-ray photoemission measurements of the Nb 3d core level as well as the valence band.

  17. MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators

    NASA Astrophysics Data System (ADS)

    Thomas, C.; Baudry, X.; Barnes, J. P.; Veillerot, M.; Jouneau, P. H.; Pouget, S.; Crauste, O.; Meunier, T.; Lévy, L. P.; Ballet, P.

    2015-09-01

    Topological insulator materials like HgTe exhibit unique electronic properties at their interfaces and so peculiar attention has to be paid concerning the growth optimization. Molecular beam epitaxy of tensile-strained HgTe/CdTe is investigated as a function of the growth temperature. Crystal quality is checked by using high resolution X-rays diffraction. By combining several material characterization techniques such as scanning transmission electronic microscopy, time-of-flight secondary ion mass spectroscopy and X-rays reflectivity, we report sharp interface morphology with nanometer-scale Hg/Cd diffusion lengths.

  18. Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

    NASA Astrophysics Data System (ADS)

    Patel, Sahil J.; Logan, John A.; Harrington, Sean D.; Schultz, Brian D.; Palmstrøm, Chris J.

    2016-02-01

    This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1×3) and c(2×2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1×3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.

  19. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

    PubMed

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-12-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films. PMID:26437653

  20. GaInAs-AlInAs heterostructures for optical devices grown by MBE

    NASA Technical Reports Server (NTRS)

    Welch, D. F.; Wicks, G. W.; Woodard, D. W.; Eastman, L. F.

    1983-01-01

    The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.

  1. Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Aho, A.; Korpijärvi, V.-M.; Isoaho, R.; Malinen, P.; Tukiainen, A.; Honkanen, M.; Guina, M.

    2016-03-01

    We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GaInAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0-0.06, In composition from 0 to 0.17, and Sb composition in the range of 0-0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of ~20 meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices.

  2. Optically addressed spatial light modulators by MBE-grown nipi MQW structures

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph; Andersson, P. O.; Hancock, B. R.; Iannelli, J. M.; Eng, S. T.; Grunthaner, F. J.

    1989-01-01

    Promising approaches for achieving optically addressed spatial light modulators (O-SLMs) are investigated based on combining nipi and multiple quantum well structures. Theoretical aspects of photooptic effects achievable in such structures are treated. Test structures are grown by molecular beam epitaxy using two material systems. (In,Ga)As/GaAs and (Al,Ga)As/GaAs. Experiments show large optically controlled modulation of the absorption coefficient in the quantum well layers, a log power dependence on the control signal, millisecond and shorter time response, and generally predictable behavior. The results are encouraging for several different O-SLM device structures proposed.

  3. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    NASA Technical Reports Server (NTRS)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  4. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

    NASA Astrophysics Data System (ADS)

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-10-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

  5. ZnMgS-based solar-blind UV photodetectors grown by MBE

    NASA Astrophysics Data System (ADS)

    Sou, I. K.; Wu, Marcus C. W.; Wong, K. S.; Wong, G. K. L.

    2001-07-01

    Molecular beam epitaxial growth of Zn 1- xMg xS alloy thin films on GaP (1 0 0) substrates is reported. In situ reflection high energy electron diffraction (RHEED) studies show that the alloys can be grown with stable zinc-blende structure up to x around 30%. For x>30%, a phase transition will occur at a critical thickness which is sensitively dependent on the composition x. Several Schottky barrier photodetectors using Zn 1- xMg xS layer, with thickness less than the critical thickness, as active layer were fabricated. High ultra-violet responsivity and excellent visible rejection are achieved. The response curve of the Zn 0.43Mg 0.57S device offers a long wavelength cut-off at 295 nm and closely matches the erythemal action spectrum that describes human skin sensitivity to UV radiation.

  6. MBE growth of mid-IR type-II interband laser diodes

    NASA Astrophysics Data System (ADS)

    Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.

    2005-05-01

    We report on molecular beam epitaxial growth and characterization of InAs/GaInSb/InAs/AlGaAsSb type-II miniband-to-bound state W-lasers. Laser core structures were characterized using photoluminescence, high resolution X-ray diffraction and Raman spectroscopy to reveal the best growth conditions. The growth temperature for the laser core was varied in the range between 380 °C and 460 °C and found to be optimal at 420 °C. Optimized laser active regions were embedded between 600 nm AlGaAsSb separate confinement layers which in turn were sandwiched between 1.5 μm thick n- and p-doped Al 0.85Ga 0.15As 0.07Sb 0.93 cladding layers. The upper cladding was capped with a 100 nm p +-GaSb contact layer. The growth temperature of the upper separate confinement and cladding layer was varied between 470 °C and 530 °C to reveal the influence on laser performance. Laser emission is observed near 3.2 μm. Devices with uncoated facets, mounted substrate side down could be operated up to a temperature of 185 K in continuous-wave (cw) mode. Single ended output powers of 144 mW in cw mode and 330 mW in pulsed operation were obtained for a 5-period diode laser structure with HR/AR coated mirror facets at an operation temperature of 110 K.

  7. Determination of the dielectric functions of MBE-grown Zn1-xMgxTe II-VI semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Franz, A. J.; Peiris, F. C.; Liu, X.; Bindley, U.; Furdyna, J. K.

    2004-02-01

    We have explored the dielectric functions of ternary Zn1-xMgxTe thin films using a variable angle spectroscopic ellipsometer for samples between x = 0 and x = 0.52. We obtained values for the complex dielectric function for Zn1-xMgxTe in both the transparent and absorption regions by incorporating a threelayer model to simulate the experimental data. To this end, we also used the previously published relations of the dispersion of the indices of refraction (in the transparent region) of Zn1-xMgxTe measured using a combination of prism coupler and reflectivity. We have fitted the second derivatives of both the real and the imaginary parts of the dielectric function to obtain the critical point parameters corresponding to the higher order electronic transitions in the lattice.

  8. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    NASA Astrophysics Data System (ADS)

    Choudhary, B. S.; Singh, A.; Tanwar, S.; Tyagi, P. K.; Kumar, M. Senthil; Kushvaha, S. S.

    2016-04-01

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  9. Low-temperature growth of InGaN films over the entire composition range by MBE

    NASA Astrophysics Data System (ADS)

    Fabien, Chloe A. M.; Gunning, Brendan P.; Alan Doolittle, W.; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando A.

    2015-09-01

    The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.

  10. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique.

    PubMed

    Chen, Hugo Juin-Yu; Yang, Dian-Long; Huang, Tseh-Wet; Yu, Ing-Song

    2016-12-01

    In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(-2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. The growth mechanism of InN nanodots could be described via the characterizations of indium droplets and InN nanodots using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The density of the InN nanodots was less than that of the In droplets due to the surface diffusion and desorption of atoms during the nitridation and annealing process. The average size and density of InN nanodots can be controlled by the substrate temperatures during the growth. For the growth at lower temperature, we obtained the higher density and smaller average size of InN nanodots. To minimize the total surface energy, the coarsening and some preferred orientations of InN nanodots were observed for the growth at high temperature. PMID:27142879

  11. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

    NASA Astrophysics Data System (ADS)

    de la Mata, Maria; Zhou, Xiang; Furtmayr, Florian; Teubert, Jörg; Gradecak, Silvija; Eickhoff, Martin; Fontcuberta i Morral, Anna; Arbiol, Jordi

    2013-05-01

    We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting with the well-known axial, radial (coaxial/prismatic) or polytypic quantum wells in GaN/AlN, GaAs/AlAs or wurtzite/zinc-blende systems, respectively, we move to more sophisticated structures by lowering their dimensionality. New recent approaches developed for the self-assembly of GaN quantum wires and InAs or AlGaAs quantum dots on single nanowire templates are reported and discussed. Aberration corrected scanning transmission electron microcopy is presented as a powerful tool to determine the structure and morphology at the atomic scale allowing for the creation of 3D atomic models that can help us to understand the enhanced optical properties of these advanced quantum structures.

  12. MBE growth and transport of the topologically tunable (Bi1-x In x)2Se3 system

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Bansal, Namrata; Koirala, Nikesh; Xu, Suyang; Hasan, Zahid; Oh, Seongshik

    2012-02-01

    A current challenge in the field of topological insulators (TI) is identifying a clear transport signal of the surface conduction. The structural similarity between Bi2Se3 and In2Se3 allowed us to combine the two to obtain (Bi1-x In x)2Se3; Bi2Se3 has inverted bands, and thus is a non-trivial insulator. In2Se3 has no inverted bands and is therefore a trivial band insulator with energy gap 1.3-1.9eV. The mixing ratio x can be thought of as a knob to switch the system from a trivial to a non-trivial state. I will briefly discuss our scheme for producing atomically smooth molecular beam epitaxial grown thin films. I will also discuss our work on transport in the TI-to-non TI regime, and the metal to insulator regime, and compare these results with angle resolved photo emission spectroscopy data.

  13. A Complexity Approach toward Mind-Brain-Education (MBE); Challenges and Opportunities in Educational Intervention and Research

    ERIC Educational Resources Information Center

    Steenbeek, Henderien W.; van Geert, Paul L. C.

    2015-01-01

    In the context of an educational or clinical intervention, we often ask questions such as "How does this intervention influence the task behavior of autistic children?" or "How does working memory influence inhibition of immediate responses?" What do we mean by the word "influence" here? In this article, we introduce…

  14. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native... the implementing regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13...

  15. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native... the implementing regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13...

  16. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native... the implementing regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13...

  17. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    SciTech Connect

    Ramesh, Ramamoorthy; Uecker, Reinhard , Germany); Doolittle, W. Alan; Reiche, P. , Germany); Liu, Zi-Kui; Bernhagen, Margitta , Germany); Tian, Wei; Ihlefeld, Jon F.; Schlom, Darrell G.

    2008-08-01

    BiFeO3 thin films have been deposited on (101) DyScO3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds. Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3/(100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [1120] BiFeO3 [1120] GaN (SiC) plus a twin variant related by a 180{sup o} in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.

  18. MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates

    NASA Astrophysics Data System (ADS)

    Lubyshev, Dmitri; Fastenau, Joel M.; Qiu, Yueming; Liu, Amy W. K.; Koerperick, Edwin J.; Olesberg, Jonathon T.; Norton, Dennis; Faleev, Nikolai N.; Honsberg, Christiana B.

    2013-06-01

    The GaSb-based family of materials and heterostructures provides rich bandgap engineering possibilities for a variety of infrared (IR) applications. Mid-wave and long-wave IR photodetectors are progressing toward commercial manufacturing applications, but to succeed they must move from research laboratory settings to general semiconductor production and they require larger diameter substrates than the current standard 2-inch and 3-inch GaSb. Substrate vendors are beginning production of 4-inch GaSb, but another alternative is growth on 6-inch GaAs substrates with appropriate metamorphic buffer layers. We have grown generic MWIR nBn photodetectors on large diameter, 6-inch GaAs substrates by molecular beam epitaxy. Multiple metamorphic buffer architectures, including bulk GaSb nucleation, AlAsSb superlattices, and graded GaAsSb and InAlSb ternary alloys, were employed to bridge the 7.8% mismatch gap from the GaAs substrates to the GaSb-based epilayers at 6.1 Å lattice-constant and beyond. Reaching ~6.2 Å extends the nBn cutoff wavelength from 4.2 to <5 µm, thus broadening the application space. The metamorphic nBn epiwafers demonstrated unique surface morphologies and crystal properties, as revealed by AFM, high-resolution XRD, and cross-section TEM. GaSb nucleation resulted in island-like surface morphology while graded ternary buffers resulted in cross-hatched surface morphology, with low root-mean-square roughness values of ~10 Å obtained. XRD determined dislocation densities as low as 2 × 107 cm-2. Device mesas were fabricated and dark currents of 1 × 10-6 A/cm2 at 150K were measured. This work demonstrates a promising path to satisfy the increasing demand for even larger area focal plane array detectors in a commercial production environment.

  19. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    NASA Astrophysics Data System (ADS)

    Flynn, Chris; Lee, William

    2014-04-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 1018-5 × 1020 cm-3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E2 and A1(LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 1019 cm-3, increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN.

  20. Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys

    NASA Astrophysics Data System (ADS)

    Sarney, W. L.; Svensson, S. P.; Novikov, S. V.; Yu, K. M.; Walukiewicz, W.; Ting, M.; Foxon, C. T.

    2015-09-01

    Highly mismatched GaN1-xSbx alloys were grown under N-rich conditions at low substrate temperatures (325-550 °C) at a growth rates of ~0.09 μm/hr on sapphire. The alloys ranged in Sb composition from 0% to 16%, with the bandgap shifting from 3.3 to 1.6 eV in accordance with the band anticrossing (BAC) model. We compare these results to growths from another chamber, having a different N source, and using a faster growth rate (~0.24 μm/hr), much lower substrate temperatures (as low as 80 °C), different III/V ratios and absolute fluxes. Despite the range of morphologies obtained, all alloys follow the predictions of the BAC model with the bandgap only depending on the Sb composition.

  1. Defect studies in MBE grown GaSb{sub 1−x}Bi{sub x} layers

    SciTech Connect

    Segercrantz, N.; Kujala, J.; Tuomisto, F.; Slotte, J.; Song, Y.; Wang, S.

    2014-02-21

    Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb{sub 1−x}Bi{sub x} on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0–0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

  2. Hilda Mary Woods MBE, DSc, LRAM, FSS (1892–1971): reflections on a Fellow of the Royal Statistical Society

    PubMed Central

    Farewell, Vern; Johnson, Tony; Gear, Rosemary

    2012-01-01

    We have previously described the content of a text by Woods and Russell, An Introduction to Medical Statistics, compared it with Principles of Medical Statistics by Hill and set both volumes against the background of vital statistics up until 1937. The two books mark a watershed in the history of medical statistics. Very little has been recorded about the life and career of the first author of the earlier textbook, who was a Fellow of the Royal Statistical Society for at least 25 years, an omission which we can now rectify with this paper. We describe her education, entry into medical statistics, relationship with Major Greenwood and her subsequent career and life in Ceylon, Kenya, Australia, England and South Africa. PMID:22973076

  3. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  4. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  5. Thermoelectric properties of MBE-grown HgCdTe-based superlattices from 100K to 300K

    NASA Astrophysics Data System (ADS)

    Zhang, Kejia; Yadav, Abhishek; Shao, Lei; Bommena, Ramana; Zhao, Jun; Velicu, Silviu; Pipe, Kevin P.

    2016-07-01

    We report on the thermoelectric properties of long-period HgCdTe superlattices (MCT SLs) from cryogenic temperature to room temperature. We find that the thermal conductivity is lower than the alloy value especially at low temperatures, the electrical conductivity is similar to that of alloy films, and the Seebeck coefficient is comparable to other SLs. Calculations based on Rytov's elastic model show that the phonon group velocity is reduced due to folding by more than a factor of two relative to its value in bulk CdTe or HgTe. Thermal conductivity is found to be relatively constant over a wide range of temperatures.

  6. Formation of Metal-Semiconductor Interfaces on Mbe-Grown Gallium ARSENIDE(100): Surface Photovoltage, Chemistry and Band Bending

    NASA Astrophysics Data System (ADS)

    Mao, Duli

    1992-01-01

    The chemical, structural and electronic properties of the metal-GaAs interfaces formed on the polar (100) surface are studied using high resolution core level photoemission spectroscopy (PES) and low energy electron diffraction (LEED). The clean (4 x 2)-c(8 x 2) reconstructed GaAs(100) surface, prepared by molecular beam epitaxy and subsequent thermal decapping of an As protective layer, is characterized carefully. Ga 3d and As 3d core levels are analyzed using test square curve fitting. Two Ga surface components are resolved while only one surface component is necessary for As. The assignment of these surface components to different surface atomic arrangements is discussed. The surface Fermi level position with respect to the valence band maximum is also investigated as a function of decapping temperature. Metal (In, Ga, Au)/GaAs(100) interfaces, formed at both room (RT) and low temperature (LT), are studied. The morphology of these interfaces resembles that of metal/GaAs(110) interfaces formed at LT, in that the deposited metal atoms reside at the surface as isolated adatoms rather than as clusters at submonolayer coverage. Metal clustering is only important at coverages higher than a few monolayers and is more prominent at RT than at LT. The GaAs(100) band bending is studied as a function of metal coverage and deposition temperature. At submonolayer metal coverages, In and Ga both cause reduced band bending (~ 0.2eV) on n-type GaAs, a phenomenon similar to the Fermi level overshoot observed at LT-formed metal/p-GaAs(110) interfaces and indicative of formation of adatom-induced donor levels in the upper part of the band gap. With Au, In and Ga, the Fermi level is pinned at 0.4eV, 0.6eV and 0.68eV above the valence band maximum respectively, in good agreement with the results obtained at metal/GaAs(110) interfaces. This contradicts recent claims of near-Schottky limit for these interfaces. Evidence of correlation between pinning and overlayer metallization is found for all three interfaces, supporting the metal induced gap states (MIGS) model for Schottky barrier formation. The synchrotron radiation-induced surface photovoltage (SPV), which could invalidate the apparent band bending measured with PES, is studied as a function of metal coverage and temperature, using a Kelvin probe. A large (0.55eV) and quasi-permanent SPV is observed on lightly doped n -GaAs at LT. A non-negligible (0.2eV) SPV is also observed at room temperature. No SPV is detected on highly doped GaAs. The impact of this synchrotron radiation induced SPV on the photoemission study of metal-semiconductor interfaces is discussed.

  7. High-quality InN films on GaN using graded InGaN buffers by MBE

    NASA Astrophysics Data System (ADS)

    Islam, SM; Protasenko, Vladimir; Rouvimov, Sergei; (Grace Xing, Huili; Jena, Debdeep

    2016-05-01

    The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500 nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm2/(V·s) at 300 K. A strong room temperature photoluminescence showing a bandgap of 0.65 eV with 79 meV linewidth is observed. A graded InGaN buffer is found to lead to extremely smooth and high-quality InN films.

  8. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... subjected to racial or ethnic prejudice or cultural bias because of his or her identity as a member of...

  9. 40 CFR 33.202 - How does an entity qualify as an MBE or WBE under EPA's 8% statute?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... CFR 124.105 and 13 CFR 124.106, respectively. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native... person who has been subjected to racial or ethnic prejudice or cultural bias because of his or...

  10. Epitaxial dysprosium phosphide grown by gas-source and solid-source MBE on gallium arsenide substrates

    NASA Astrophysics Data System (ADS)

    Sadwick, L. P.; Lee, P. P.; Patel, M.; Nikols, M.; Hwu, R. J.; Shield, J. E.; Streit, D. C.; Brehmer, D.; McCormick, K.; Allen, S. J.; Gedridge, R. W.

    1996-07-01

    We report the first known study of the growth of epitaxial dysprosium phosphide (DyP) grown on gallium arsenide (GaAs). DyP is lattice matched to GaAs, with the room-temperature mismatch being less than 0.01%. We have grown DyP on GaAs by gas-source and by solid-source molecular beam epitaxy using custom-designed group V thermal cracker cells and group III high temperature effusion cells. X-ray diffraction results show the DyP epilayer to be (001) single crystal on GaAs(001) substrate. Electrical and optical measurements performed to date are inconclusive as to whether DyP is a semi-metal or a semiconductor with a small band gap. The undoped films are n-type with measured electron concentrations on the order of 5 × 10 19-6 × 10 20cm -3 with mobilities of 1-10 cm 2/V · s. {DyP}/{GaAs} is stable in air with no apparent oxidation taking place, even after months of exposure to ambient untreated air. Material and surface science properties measured for {DyP}/{GaAs} include Hall measurements, 2ϑ and double-crystal X-ray diffraction spectra and photothermal deflection spectroscopy.

  11. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  12. Ellipsometric Study of NbO2 Grown by MBE on LSAT from 77 to 800 K

    NASA Astrophysics Data System (ADS)

    Nunley, T. N.; Zollner, S.; Hadamek, T.; Posadas, A. B.; O'Hara, A.; Demkov, A. A.

    2015-03-01

    NbO2 is a transition metal oxide that has been of interest for several decades. Like other complex oxides it has a metal-insulator transition provoked by external stimuli such as temperature, pressure, and electric fields. Our study shows the dielectric function of NbO2 grown by molecular beam epitaxy, optical axis in-plane, on (LaAlO3)0.3 (Sr2AlTaO6)0.35 (LSAT) substrates. The ellipsometric angles were measured from 0.76 to 6.52 eV using a UV/VIS variable-angle spectroscopic ellipsometer and from 250 to 1200 cm-1 using an FTIR ellipsometer. By using regression analysis we modeled our optical spectra with one model over the entire range from the mid-infrared to the near UV. For the LSAT substrate, we used optical constants from a previous study. A sum of Tauc-Lorentz oscillators describes the dielectric function of the NbO2 film. We have measured the dielectric function of the sample from 77-800 K. This has allowed us to see that the absorption peaks sharpen/broaden with decreasing/increasing temperature. We have also plotted the direct and indirect band gaps as a function of temperature.

  13. Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Karakaya, Merve; Bilgilisoy, Elif; Arı, Ozan; Selamet, Yusuf

    2016-07-01

    Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, <ɛ2 > or phase angle, ψ) and atomic force microscopy (AFM) roughness. <ɛ2 > and ψ values at 3.31 eV, which corresponds to E1 critical transition energy of CdTe band structure, are chosen for the correlation since E1 gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data (<ɛ2 > and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.

  14. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    DOE PAGESBeta

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  15. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

    PubMed

    Shih, Cheng-Hung; Huang, Teng-Hsing; Schuber, Ralf; Chen, Yen-Liang; Chang, Liuwen; Lo, Ikai; Chou, Mitch Mc; Schaadt, Daniel M

    2011-01-01

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample. PMID:21711945

  16. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

    PubMed Central

    2011-01-01

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample. PMID:21711945

  17. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

    PubMed Central

    2011-01-01

    The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively. PMID:22136595

  18. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  19. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  20. 40 CFR 33.203 - How does an entity qualify as an MBE or WBE under EPA's 10% statute?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... controlled by such individuals. (See also 13 CFR 124.109 for special rules applicable to Indian tribes and Alaska Native Corporations; 13 CFR 124.110 for special rules applicable to Native Hawaiian Organizations... regulations of section 8(a)(5) of the Small Business Act (15 U.S.C. 637(a)(5); 13 CFR 124.103; see also 13...

  1. Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates

    NASA Astrophysics Data System (ADS)

    Arimoto, Keisuke; Sakai, Shoichiro; Furukawa, Hiroshi; Yamanaka, Junji; Nakagawa, Kiyokazu; Usami, Noritaka; Hoshi, Yusuke; Sawano, Kentarou; Shiraki, Yasuhiro

    2013-09-01

    The hole effective mass in a compressively strained Si formed on a (100) surface is expected to be low. The growth of a high quality strain-relaxed Si1-xCx increases the possibility of high performance electronic devices using compressively strained Si film. In this study, growth conditions and their influence on microstructural aspects of Si1-xCx grown by gas-source molecular beam epitaxy were studied. Disilane and trimethylsilane were used as source gases. It was found that the strain-relaxation process and defect formation were influenced not only by substrate temperature but also by flow rates of the source gases. Relationships between the morphological aspects and non-substitutional carbon concentration were studied.

  2. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    SciTech Connect

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  3. Study of InN nanorods growth mechanism using ultrathin Au layer by plasma-assisted MBE on Si(111)

    NASA Astrophysics Data System (ADS)

    Kumar, Mahesh; Rajpalke, Mohana K.; Roul, Basanta; Bhat, Thirumaleshwara N.; Krupanidhi, S. B.

    2014-01-01

    InN nanorods (NRs) were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. The growth of InN NRs has been demonstrated using an electron-beam evaporated (~2 nm) Au layer prior to the initiation of growth. The structure and morphology of as deposited Au film, annealed at 600 °C, and InN NRs were investigated using X-ray photoelectron spectroscopy and scanning electron microscopy. Chemical characterization was performed with energy dispersive X-ray analysis. Single-crystalline wurtzite structure of InN NRs is verified by transmission electron microscopy. The formation process of NRs is investigated and a qualitative mechanism is proposed.

  4. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique

    NASA Astrophysics Data System (ADS)

    Chen, Hugo Juin-Yu; Yang, Dian-Long; Huang, Tseh-Wet; Yu, Ing-Song

    2016-05-01

    In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 1011 cm-2 for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. The growth mechanism of InN nanodots could be described via the characterizations of indium droplets and InN nanodots using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The density of the InN nanodots was less than that of the In droplets due to the surface diffusion and desorption of atoms during the nitridation and annealing process. The average size and density of InN nanodots can be controlled by the substrate temperatures during the growth. For the growth at lower temperature, we obtained the higher density and smaller average size of InN nanodots. To minimize the total surface energy, the coarsening and some preferred orientations of InN nanodots were observed for the growth at high temperature.

  5. Trust: A Master Teacher's Perspective on Why It Is Important: How to Build It and Its Implications for MBE Research

    ERIC Educational Resources Information Center

    D'Andrea, Katherine Clunis

    2013-01-01

    Teaching is an interaction. It is a relationship between my students and myself. For successful interactions to take place there needs to be trust. In order for my students to be successful I have to be successful as well. My students and I have to have a variety of interactions. These interactions build trust, which leads to bonding. I believe…

  6. ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

    NASA Astrophysics Data System (ADS)

    Hierro, A.; Tabares, G.; Lopez-Ponce, M.; Ulloa, J. M.; Kurtz, A.; Muñoz, E.; Marín-Borrás, V.; Muñoz-Sanjose, V.; Chauveau, J. M.

    2016-02-01

    Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis, and we analyze and compare the physical mechanisms underlying the photodetector behavior.

  7. Monte Carlo simulation of V/III flux ratio influence on GaAs island nucleation during MBE

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Solodovnik, M. S.; Balakirev, S. V.; Mikhaylin, I. A.

    2016-02-01

    The kinetic Monte Carlo simulation of GaAs/GaAs(001) molecular beam epitaxial growth considering V/III flux ratio influence on nucleating island characteristics is presented. It is shown that the island density increases with the surface coverage increase and reaches saturation after deposition of ∼0.1 monolayer of GaAs. The increase of V/III flux ratio from 3 to 40 leads to the increase of the island density from 1.9-1012 to 2.6-1012 cm-2. At the same time the average size decreases from 4.4 to 4.1 nm. The island size distribution function narrows with V/III flux ratio increase. This is attributed to the shortage of gallium atoms in comparison with deposited arsenic molecules that prevents large island formation and leads to the dramatic growth of little island concentration. The simulation demonstrates good agreement with experimental results.

  8. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    NASA Astrophysics Data System (ADS)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  9. MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Mendez-Garcia, V. H.; González-Fernández, J. V.; Espinosa-Vega, L. I.; Díaz, T.; Romano, R.; Rosendo, E.; Gallardo, S.; Vázquez-Cortes, D.; Shimomura, S.

    2013-09-01

    In this work, the optical and electrical properties of simultaneously grown modulation-doped heterostructures (MDH) on (100)- and (631)-oriented GaAs substrates are investigated. Due to the amphoteric behavior of Si in AlGaAs doped films two dimensional electron (2DEG) and hole gas (2DHG) structures for the growth on (100) and (631) planes, respectively are obtained. Atomic force microscopy (AFM) revealed atomically flat surface for the (100)-MDH sample. On the contrary, (631)-MDH sustained uniform corrugation along [1¯13] after the growth of the GaAs films, which provoked anisotropic mobility of the carriers at 77 K as confirmed by the Hall effect in a double arm bar. By photoluminescence spectroscopy (PL) the band to band transition, carbon and Si-related lines were identified. The concentration of the ternary alloy and impurities were evaluated by secondary ion mass spectrometry.

  10. Austauschskräfte zwischen Elementarteilchen und Fermische Theorie des β-Zerfalls als Konsquenzen einer möglichen Feldtheorie der Materie [26

    NASA Astrophysics Data System (ADS)

    Inhalt: Elektron, Neutrino, Proton und Neutron werden als vier verschiedene Quantenzustände einer einzigen Elementpartikel angesehen. Quantensprünge zwischen diesen Zuständen erklären den β-Zerfall (gemäss der Theorie von Fermi) und geben zur HEISENBEBe-MAJOKANA'schen Neutron-Proton-Austauschkraft Anlass. Die Pestsetzung, dass negatives Elektron und positives Proton "Partikel"-Zustände (im Gegensatz zu "Antipartikel") sind, verbietet Zerstrahlungsprozesse der schweren Teilchen. Die umgekehrte Festsetzung (positives Elektron und positives Proton sind Partikel) führt zu Zerstrahlungsprozessen (siehe Zusammenfassung).

  11. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    SciTech Connect

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-04-15

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

  12. Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.

    2015-03-15

    Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.

  13. CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

    NASA Astrophysics Data System (ADS)

    Arapkina, Larisa V.; Yuryev, Vladimir A.

    2011-04-01

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) ( M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both hut species have been built as well as models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of a wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. A pyramid grows without phase transitions. A structure of its vertex copies the nucleus. Transitions between hut species turned out to be impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet follows the paired dimer model. Further growth of hut arrays results in domination of wedges, and the density of pyramids exponentially drops. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages 14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å.

  14. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1-xAs

    SciTech Connect

    Fluegel, Brian; Alberi, Kirstin; Reno, John; Mascarenhas, Angelo

    2015-03-12

    The aluminum concentration dependence of the energies of the direct and indirect bandgaps arising from the Γ and X conduction bands are measured at 1.7 K in the semiconductor alloy AlxGa1-xAs. The composition at which the bands cross is determined from photoluminescence of molecular-beam epitaxy samples grown very close to crossover. The use of resonant laser excitation and the improved sample linewidth allows precise determination of the bound exciton transition energies. Moreover, photoluminescence excitation spectroscopy is used to measure the binding energies of the donor-bound excitons and the Γ free exciton binding energy.

  15. Growth mode and properties of Mn-Co-Ni-O NTC thermistor thin films deposited on MgO (100) substrate by laser MBE

    NASA Astrophysics Data System (ADS)

    Xie, Yahong; Kong, Wenwen; Ji, Guang; Gao, Bo; Yao, Jincheng; Chang, Aimin

    2014-12-01

    Mn1.56Co0.96Ni0.48O4-δ thin films were deposited on MgO (100) substrate using laser molecular beam epitaxy (LMBE) technique at the temperature range of 300-600°C under oxygen partial pressure of 5 × 10-3 Pa. The effect of growth temperature on microstructure and electrical properties as well as the growth mode were studied using XRD, RHEED, AFM and resistance-temperature measurements. The results showed that all prepared thin films underwent epitaxial growth along the single-(100) orientation direction of the MgO substrate from 3D-island mode to 2D layer-by-layer mode, and exhibited good crystallinity and NTC thermistor behavior. Their resistance at room temperature can be in the range of 10-50 MΩ together with a B-value of about 3300 K, which are desirable for a wide range of practical applications of the NTC thermistors.

  16. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    SciTech Connect

    Wood, Adam W. Babcock, Susan E.; Li, Jincheng; Brown, April S.

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  17. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions

    NASA Astrophysics Data System (ADS)

    Maiboroda, I. O.; Andreev, A. A.; Perminov, P. A.; Fedorov, Yu. V.; Zanaveskin, M. L.

    2014-06-01

    Specific features of how nonalloyed ohmic contacts to the 2D conducting channel of high-electron-mobility transistors based on AlGaN/(AlN)/GaN heterostructures are fabricated via deposition of heavily doped n +-GaN through a SiO2 mask by ammonia molecular-beam epitaxy have been studied. The technique developed makes it possible to obtain specific resistances of contacts to the 2D gas as low as 0.11 Ω mm on various types of Ga-face nitride heterostructures, which are several times lower than the resistance of conventional alloyed ohmic contacts.

  18. Detailed structural analysis of epitaxial MBE-grown Fe/Cr superlattices by x-ray diffraction and transmission-electron spectroscopy

    SciTech Connect

    Gomez, M.E.; Santamaria, J.; Kim, S.; Schuller, Ivan K.; Krishnan, Kannan M.

    2005-03-15

    We have performed a detailed quantitative structural analysis of epitaxial [Fe(3 nm)/Cr(1.2 nm)]{sub 20} superlattices by low- and high-angle x-ray diffraction, and energy-filtered transmission electron microscopy on cross-section samples. The interface roughness was changed systematically by varying the substrate temperature (150-250 deg. C) maintaining all other growth parameters fixed. Direct imaging of the interfaces allows examining the roughness of the individual interfaces and its evolution with thickness. A statistical analysis of the local interface width for the individual layers supplies the roughness static and dynamic exponents. High-temperature samples (250 deg. C) show roughness decreasing with thickness as a result of surface-diffusion-dominated growth. Low-temperature samples (150 deg. C) show anomalous non-self-affine roughness characterized by a time-dependent local interface width.

  19. Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy

    SciTech Connect

    Araki, Tsutomu; Chiba, Yasuo; Nanishi, Yasushi

    2000-07-01

    GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.

  20. Society News: New Year MBE for Derek Raine; New Saturday Library dates; Society News; New way to pay fees; New Fellows

    NASA Astrophysics Data System (ADS)

    2012-02-01

    The London Olympics and the Queen's Golden Jubilee have led the Society to change planned Saturday openings of the RAS Library in Burlington House. The following were elected Fellows of the Society on 9 December 2011:

  1. Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

    SciTech Connect

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Misra, P.; Kukreja, L.M.; Sinha, Neeraj; Kalghatgi, A.T.; Krupanidhi, S.B.

    2010-11-15

    High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.

  2. Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

    PubMed Central

    2011-01-01

    The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed. PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg PMID:21711733

  3. CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

    PubMed Central

    2011-01-01

    We report a direct observation of Ge hut nucleation on Si(001) during UHV molecular beam epitaxy at 360°C. Nuclei of pyramids and wedges were observed on the wetting layer (WL) (M × N) patches starting from the coverage of 5.1 Å and found to have different structures. Atomic models of nuclei of both hut species have been built as well as models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of a wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. A pyramid grows without phase transitions. A structure of its vertex copies the nucleus. Transitions between hut species turned out to be impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet follows the paired dimer model. Further growth of hut arrays results in domination of wedges, and the density of pyramids exponentially drops. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL at coverages ~14 Å. Nanocrystalline Ge 2D layer begins forming at coverages >14 Å. PMID:21711886

  4. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE

    PubMed Central

    2012-01-01

    Critical thicknesses of two-dimensional to three-dimensional growth in GexSi1−x layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the GexSi1−x layers are characterized by the formation of (2 × n) reconstruction. We measured n for all layers of Ge/GexSi1−x/Ge heterosystem using our software with respect to the video recording of reflection high-energy electron diffraction (RHEED) pattern during growth. The n reaches a minimum value of about 8 for clear Ge layer, whereas for GexSi1−x films, n is increased from 8 to 14. The presence of a thin strained film of the GexSi1−x caused not only the changes in critical thicknesses of the transitions, but also affected the properties of the germanium nanocluster array for the top Ge layer. Based on the RHEED data, the hut-like island form, which has not been previously observed by us between the hut and dome islands, has been detected. Data on the growth of Ge/GexSi1−x/Ge heterostructures with the uniform array of islands in the second layer of the Ge film have been received. PMID:23043796

  5. Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE

    SciTech Connect

    Aabdin, Z.; Peranio, N.; Winkler, M.; Bessas, D.; König, J.; Hermann, R.P.; Böttner, H.; Eibl, O.

    2012-10-23

    Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.

  6. Multistage nucleation of two-dimensional Si islands on Si(111)-7x7 during MBE growth: STM experiments and extended rate-equation model

    SciTech Connect

    Filimonov, Sergey; Cherepanov, Vasily; Voigtlaender, Bert; Hervieu, Yuri

    2007-07-15

    The submonolayer density of two-dimensional (2D) islands in Si/Si(111)-7x7 molecular beam epitaxy is measured using scanning tunneling microscopy. At a relatively low deposition temperature of 673 K, the density of 2D islands is a power function of the deposition flux N{sub 2D}{proportional_to}F{sup {chi}} with the exponent {chi}=0.24 being smaller than that predicted by the standard nucleation theory. The nonstandard scaling of the 2D island density is explained by the multistage character of the nucleation process on the Si(111)-7x7 surface which involves consecutive stages of formation of stable Si clusters, formation of pairs of clusters, and transformation of the cluster pairs to 2D islands. Using an extended rate-equation model, we analyze the temperature and growth rate dependencies of the density of single clusters, cluster pairs, and 2D islands and show that an activation barrier of {approx}1.26 eV delays the transformation of cluster pairs to 2D islands. The delayed transformation of cluster pairs to 2D islands is the reason for the nonstandard scaling of the 2D island density observed at low deposition temperatures.

  7. High operating temperature SWIR p+-n FPA based on MBE-grown HgCdTe/Si(0 1 3)

    NASA Astrophysics Data System (ADS)

    Bazovkin, V. M.; Dvoretsky, S. A.; Guzev, A. A.; Kovchavtsev, A. P.; Marin, D. V.; Polovinkin, V. G.; Sabinina, I. V.; Sidorov, G. Yu.; Tsarenko, A. V.; Vasil'ev, V. V.; Varavin, V. S.; Yakushev, M. V.

    2016-05-01

    The characteristics of SWIR (1.6-3 μm) 320 × 256 and 1024 × 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p-n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK.

  8. Gas-source MBE growth and n-type doping of AlGaAs using TEG, TEA, AsH 3 and Si 2H 6

    NASA Astrophysics Data System (ADS)

    Fujii, T.; Ando, H.; Sandhu, A.; Ishikawa, H.; Sugiyama, Y.

    1991-01-01

    We have studied gas-source molecular beam epitaxy (GSMBE) growth and n-type doping of AlGaAs using triethylgallium, triethylaluminum, arsine (AsH 3) and disilane (Si 2H 6), focusing on (1) the effect of substrate temperature (520-690°C) and AsH 3 flow rate (2-7 SCCM) on the carbon and oxygen incorporation of Al xGa 1- xAs ( x ˜ 0.28), and (2) the variation of the carrier concentration of n-type Al xGa 1- xAs ( x = 0-0.28) with Si 2H 6 flow rate (0.4-10 SCCM). The carbon concentration decreased with increasing substrate temperature up to 610°C, then increased with increasing substrate temperature using an AsH 3 flow rate of 2 SCCM. Below 610°C, an increase in AsH 3 flow rate resulted in a reduction in the carbon concentration. We obtained a carbon concentration of 1 × 10 18 cm -3 at a substrate temperature of 520°C and an AsH 3 flow rate of 7 SCCM. The addition of molecular hydrogen was found to further reduce the carbon concentration, and the lowest value obtained was 8.2 × 10 17 cm -3 at a substrate temperature of 520°C using 4 SCCM AsH 3 and 4.5 SCCM of molecular hydrogen. The oxygen concentration was not affected by the substrate temperature, but showed a slight decrease with increasing AsH 3 flow rate. The lowest oxygen concentration was 2.5 × 10 17 cm -3 at 7 SCCM AsH 3 flow rate. The variation of the hole concentration with growth conditions was similar to that observed for carbon. The 4.2 K photoluminescence was dominated by a free-to-bound emission having a full-width-at-half-maximum of 18 meV, which is thought to be related to shallow carbon acceptors. Si 2H 6 was shown to be a suitable cold n-type gaseous dopant source for GSMBE growth of AlGaAs. The carrier concentration of the n-type Al xGa 1- xAs ( x = 0-0.28) epilayer was reproducibly controlled between 5 × 10 17 and 2 × 10 18 cm -3.

  9. Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Lu, Jing; Webster, P. T.; Liu, S.; Zhang, Y.-H.; Johnson, S. R.; Smith, David J.

    2015-09-01

    The microstructure of InAs1-xBix (x~4.5% and ~5.8%) films and Bi-mediated InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb (0 0 1) substrates has been investigated by electron microscopy techniques. Lateral compositional modulation exists in both smooth and hazy regions of all InAsBi films observed but no atomic ordering is apparent using current imaging projections. Surface droplets present in hazy regions assume a zincblende crystalline structure that is usually tilted relative to the underlying dilute bismide film. Study of Bi-mediated InAs/InAs0.81Sb0.19 type-II superlattices indicates that the InAs-on-InAsSb interface still appears broadened relative to the InAsSb-on-InAs interface.

  10. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    PubMed

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties. PMID:26916430

  11. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth. PMID:26876494

  12. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    NASA Astrophysics Data System (ADS)

    Nirwal, Varun Singh; Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao

    2016-05-01

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10-5 A to 7.31×10-7 A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of Rs decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  13. Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures

    NASA Astrophysics Data System (ADS)

    Mooney, P. M.; Tarun, M. C.; Bahrami-Yekta, V.; Tiedje, T.; Lewis, R. B.; Masnadi-Shirazi, M.

    2016-06-01

    Deep level defects in p-type GaAs1‑x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 °C does not affect the total concentration of hole traps, which is ∼4 × 1016 cm‑3, comparable to the concentration of electron traps observed in Si-doped GaAsBi having a similar alloy composition. Increasing the growth temperature of the p-type GaAsBi (x = 0.8%) layer from 330 °C to 370 °C reduces the hole trap concentration by an order of magnitude. Moreover, the defects having near mid-gap energy levels that are the most efficient non-radiative recombination centers are present only in GaAsBi layers grown at the lower temperature. These new results are discussed in the context of previous measurements of n-type GaAs and GaAsBi layers grown under similar conditions.

  14. Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

    NASA Technical Reports Server (NTRS)

    Miller, M. D.

    1981-01-01

    Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

  15. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... certification, an affidavit sworn to by the entity's owners before a person who is authorized by state law to... of an affidavit sworn to by the applicant before a person who is authorized by State law...

  16. 40 CFR 33.210 - Does an entity certified as an MBE or WBE by EPA need to keep EPA informed of any changes which...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... certification, an affidavit sworn to by the entity's owners before a person who is authorized by state law to... of an affidavit sworn to by the applicant before a person who is authorized by State law...

  17. Elektrotechnik

    NASA Astrophysics Data System (ADS)

    Böge, Gert

    Ursprünglicher Sitz der Elektrizität ist das Atom. Das Wasserstoffatom z.B. besteht aus einem Proton als Kern und einem Elektron, das diesen Kern auf einer bestimmten Bahn umkreist. Das Proton bezeichnet man als elektrisch positiv, - das Elektron als negativ geladen. Zwischen beiden befindet sich die "Elektrizität“ in Form eines besonderen Raumzustandes, der als elektrisches Feld bezeichnet wird. Normalerweise erscheint ein Stoff nach außen hin elektrisch neutral, weil ebenso viele positive wie negative Ladungen in ihm enthalten sind.

  18. Heavy Ion Fusion Accelerator Research (HIFAR) half-year report, October 1, 1989--March 31, 1990

    SciTech Connect

    Not Available

    1990-03-01

    This report discusses the following topics: Transverse Emittance Studies on MBE-4; MBE-4 Simulations; Beam Centroid Motion and Misalignments in MBE-4; Survey and Alignment of MBE-4; Energy Analysis of the 5mA MBE-4 Beam; An Improved 10 mA Ion Source for MBE-4; Emittance Degradation via a Wire Grid; Ion Source Development; 2 MV Injector; Electrostatic Quadrupole Prototype Development Activity; Magnetic Induction Core Studies; A Preliminary Consideration of Beam Splitting in Momentum Space; and Status of the Optimization Code HILDA.

  19. 40 CFR 33.501 - What are the recordkeeping requirements of this part?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... quote on prime contracts, or bid or quote subcontracts on EPA assisted projects, including both MBE/WBEs... procurement on which the entity bid or quoted, and when; and (4) Entity's status as an MBE/WBE or...

  20. 40 CFR 33.501 - What are the recordkeeping requirements of this part?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... quote on prime contracts, or bid or quote subcontracts on EPA assisted projects, including both MBE/WBEs... procurement on which the entity bid or quoted, and when; and (4) Entity's status as an MBE/WBE or...

  1. 40 CFR 33.404 - When must a recipient negotiate fair share objectives with EPA?

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... negotiate fair share objectives with EPA? A recipient must submit its proposed MBE and WBE fair share... the recipient. MBE and WBE fair share objectives must be agreed upon by the recipient and EPA...

  2. Mind, Brain, and Education: A Transdisciplinary Field

    ERIC Educational Resources Information Center

    Knox, Rockey

    2016-01-01

    The emerging field of mind, brain, and education (MBE) is grappling with core issues associated with its identity, scope, and method. This article examines some of the most pressing issues that structure the development of MBE as a transdisciplinary effort. Rather than representing the ongoing debates in MBE as superficial squabbles to eventually…

  3. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

    SciTech Connect

    Chowdhury, Subhra; Biswas, Dhrubes

    2015-05-15

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

  4. Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1-xCdxTe in wide temperature range

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2014-12-01

    Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1-xCdxTe (x = 0.22-0.23 and 0.31-0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22-0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31-0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22-0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31-0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25-77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22-0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8-77 K.

  5. Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

    SciTech Connect

    Aleshin, A. N. Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2015-08-15

    The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for the (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.

  6. MBE growth, structural and transport properties of alternately-strained ZnSSe/CdSe superlattices with effective band-gap 2.5-2.6 eV

    NASA Astrophysics Data System (ADS)

    Sorokin, S. V.; Gronin, S. V.; Evropeytsev, E. A.; Sedova, I. V.; Toropov, A. A.; Ivanov, S. V.

    2015-09-01

    Short-period ZnSySe1-y/CdSe superlattices (SLs) with an effective energy gap Eg=2.5-2.6 eV (T=300 K) are grown by molecular beam epitaxy pseudomorphically on GaAs (001), and their structural properties are studied by using X-ray diffraction (XRD) and transmission electron microscopy. Both sulfur content and thickness of the ZnSySe1-y SL barriers have been determined via analysis of the XRD curves, taking account of the thickness of the CdSe SL layers estimated independently from the low-temperature (T=77 K) PL spectra of the single CdSe quantum dot (QD) layer (nominal thickness of 2.8 monolayer) embedded into each SL. The evaluated SL parameters are shown to be in good agreement with the intended ones. The efficient non-equilibrium carrier transport in the SLs along the growth direction at 300 K is demonstrated by photoluminescence (PL) spectroscopy through the relative temperature variation of the intensities of the PL peaks originated from the buried CdSe/ZnSe QD layers and the ZnSSe/CdSe SLs.

  7. Long wavelength quantum well lasers: Synopsis of the RACE ``AQUA'' project: MOVPE/MBE/GSMBE for InGaAsP/InP and InGaAlAs/InP high speed MQW DFB lasers

    NASA Astrophysics Data System (ADS)

    Speier, Peter

    1991-12-01

    The technological limits for ultra high speed devices are now rapidly expanding due to the use of quantum well (QW) materials. This new class of materials gives the opportunity of tailoring materials parameters by controlling geometries on an atomic scale. They look very promising as materials for lasers, detectors and transistors suitable even above 10 Gb/s. It will be demonstrated that state of the art MQW structures can be realized in both material systems, InGaAsP/InP and InGaAlAs/InP. Parallel lateral laser structures ( e.g. SIBH, BRS and TBH) have been designed to take full benefit of QW technology. Ultimate reduction of parasitics, whilst using potential low cost fabrication technologies is the basis for achieving high bitrate (10 Gb/s) MQW lasers, even with the stronger damping in QW material. Using the DFB-SIBH laser structure 10 Gb/s large signal experiments are successfully performed with bulk, MQW and SLMQW lasers. Extremely low fall times of 44 ps are achieved. Additional MQW based improvements are observed such as: -3 times higher differential gain, increased output power (>110 mW), 2.5 times lower chirp (Δλ-20dB = 0.40 nm at 10 Gb/s modulation), and 2 dB gain in power budget at 10 Gb/s digital transmission.

  8. Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi[subscript 2]Te[subscript 3] and Sb[subscript 2]Te[subscript 3] thin films

    SciTech Connect

    Peranio, N.; Winkler, M.; Bessas, D.; Aabdin, Z.; König, J.; Böttner, H.; Hermann, R.P.; Eibl, O.

    2012-10-23

    Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} thin films were grown at room temperature on SiO{sub 2} and BaF{sub 2} substrates using molecular beam epitaxy. A layer-by-layer growth was achieved such that metallic layers of the elements with 0.2 nm thickness were deposited. The layer structure in the as-deposited films was confirmed by X-ray diffraction and was seen more clearly in Sb{sub 2}Te{sub 3} thin films. Subsequent annealing was done at 250 C for 2 h and produced the Sb{sub 2}Te{sub 3} and Bi{sub 2}Te{sub 3} crystal structure as confirmed by high-energy X-ray diffraction. This preparation process is referred to as nano-alloying and it was demonstrated to yield single-phase thin films of these compounds. In the thin films a significant texture could be identified with the crystal c axis being almost parallel to the growth direction for Sb{sub 2}Te{sub 3} and tilted by about 30{sup o} for Bi{sub 2}Te{sub 3} thin films. In-plane transport properties were measured for the annealed films at room temperature. Both films yielded a charge carrier density of about 2.6 x 10{sup 19} cm{sup -3}. The Sb{sub 2}Te{sub 3} films were p-type, had a thermopower of +130 {micro}V K{sup -1}, and surprisingly high mobilities of 402 cm{sup 2} V{sup -1} s{sup -1}. The Bi{sub 2}Te{sub 3} films were n-type, showed a thermopower of -153 {micro}V K{sup -1}, and yielded significantly smaller mobilities of 80 cm2 V{sup -1} s{sup -1}. The chemical composition and microstructure of the films were investigated by transmission electron microscopy (TEM) on cross sections of the thin films. The grain sizes were about 500 nm for the Sb{sub 2}Te{sub 3} and 250 nm for the Bi{sub 2}Te{sub 3} films. In the Bi{sub 2}Te{sub 3} thin film, energy-filtered TEM allowed to image a Bi-rich grain boundary phase, several nanometers thick. This secondary phase explains the poor mobilities of the Bi{sub 2}Te{sub 3} thin film. With these results the high potential of the nano-alloying deposition technique for growing films with a more complex layer architecture is demonstrated.

  9. Dependence of the electrical parameters of MBE-grown Cd{sub x}Hg{sub 1} {sub -} {sub x}Te films on the level of doping with indium

    SciTech Connect

    Varavin, V. S. Dvoretskii, S. A.; Ikusov, D. G.; Mikhailov, N. N.; Sidorov, Yu. G.; Sidorov, G. Yu.; Yakushev, M. V.

    2008-06-15

    Dependences of the minority-carrier lifetime and electron mobility in Cd{sub x}Hg{sub 1-x}Te films on their indium-doping level are studied. Films with x {approx} 0.22 grown by molecular-beam epitaxy on GaAs substrates were in situ doped with indium across their entire thickness. The temperature dependences of the lifetime were studied in the temperature range 77-300 K. The decrease in the lifetime, observed as the doping level increases, is governed by the mechanism of Auger recombination. As the doping level becomes higher, the mobility decreases in qualitative agreement with theoretical calculations.

  10. A Sodium-Containing Quasicrystal: Using Gold To Enhance Sodium's Covalency in Intermetallic Compounds

    SciTech Connect

    Smetana, Volodymyr; Lin, Qisheng; Pratt, Daniel K.; Kreyssig, Andreas; Ramazanoglu, Mehmet; Corbett, John D.; Goldman, Alan I.; Miller, Gordon J.

    2013-09-26

    Gold macht stabil: Na13Au12Ga15, ein natriumhaltiges thermodynamisch stabiles quasikristallines Material, wurde bei einer systematischen Studie des polaren Na-Au-Ga-Intermetallsystems entdeckt. Sein Elektron/Atom-Verhältnis von 1.75 ist für Bergman-Ikosaederphasen extrem klein, doch der substanzielle Au-Anteil sorgt für eine Hume-Rothery-Stabilisierung und neuartige polar-kovalente Na-Au-Wechselwirkungen.

  11. Effect of different stages of tensile deformation on micromagnetic parameters in high-strength, low-alloy steel

    SciTech Connect

    Vaidyanathan, S.; Moorthy, V.; Kalyanasundaram, P.; Jayakumar, T.; Raj, B.

    1999-08-01

    The influence of tensile deformation on the magnetic Barkhausen emissions (MBE) and hysteresis loop has been studied in a high-strength, low-alloy steel (HSLA) and its weldment. The magnetic measurements were made both in loaded and unloaded conditions for different stress levels. The root-mean-square (RMS) voltage of the MBE has been used for analysis. This study shows that the preyield and postyield deformation can be identified from the change in the MBE profile. The initial elastic deformation showed a linear increase in the MBE level in the loaded condition, and the MBE level remained constant in the unloaded condition. The microplastic yielding, well below the macroyield stress, significantly reduces the MBE, indicating the operation of grain-boundary dislocation sources below the macroyield stress. This is indicated by the slow increase in the MBE level in the loaded condition and the decrease in the MBE level in the unloaded condition. The macroyielding resulted in a significant increase in the MBE level in the loaded condition and, more clearly, in the unloaded condition. The increase in the MBE level during macroyielding has been attributed to the grain rotation phenomenon, in order to maintain the boundary integrity between adjacent grains, which would preferentially align the magnetic domains along the stress direction. This study shows that MBE during tensile deformation can be classified into four stages: (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding, and (4) progressive plastic deformation. A multimagnetic parameter approach, combining the hysteresis loop and MBE, has been suggested to evaluate the residual stresses.

  12. Heavy Ion Fusion Accelerator Research (HIFAR) year-end report, April 1, 1986-September 30, 1986

    SciTech Connect

    Not Available

    1986-10-01

    Activities are reported on MBE-4, the four-beam proof-of-principle ion induction linear accelerator with the capability of beam-current amplification. Mechanical aspects of MBE-4, quadrupole insulator performance, and pulsers are discussed. The computer code, SLID, has been used to help understand the longitudinal beam dynamics in MBE-4. A computer-controlled emittance scanning system is in use in MBE-4. A systematic effort is under way to discover and correct all the defects peculiar to the low energy part of the linac design code. (LEW)

  13. Evaluation of "Maths by Email." Final Report

    ERIC Educational Resources Information Center

    Kissane, Barry; McConney, Andrew

    2010-01-01

    "Maths by Email" (MbE) is a free fortnightly email newsletter produced through a partnership between CSIRO Education and the Australian Mathematical Sciences Institute (AMSI), with funding from the Australian Government Department of Education, Employment and Workplace Relations (DEEWR). The principal aim of MbE has been "to communicate that…

  14. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  15. Communication in Mind, Brain, and Education: Making Disciplinary Differences Explicit

    ERIC Educational Resources Information Center

    Kalra, Priya; O'Keeffe, Jamie K.

    2011-01-01

    Difficulties in communication within Mind, Brain, and Education (MBE) can arise from several sources. One source is differences in orientation among the areas of research, policy, and practice. Another source is lack of understanding of the entrenched and unspoken differences across research disciplines in MBE--that is, recognition that research…

  16. 75 FR 52001 - Agency Information Collection Activities; Submission to OMB for Review and Approval; Comment...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-24

    ... (74 FR 48265), EPA sought comments on this ICR pursuant to 5 CFR 1320.8(d). EPA received no comments... Request; Minority Business Enterprise/ Woman Business Enterprise (MBE/WBE) Utilization Under Federal... Protection Agency, MBE/WBE ] Utilization Under Federal Grants, Cooperative Agreements, and...

  17. A Multivariate Generalizability Analysis of the Multistate Bar Examination

    ERIC Educational Resources Information Center

    Yin, Ping

    2005-01-01

    The main purpose of this study is to examine the content structure of the Multistate Bar Examination (MBE) using the "table of specifications" model from the perspective of multivariate generalizability theory. Specifically, using MBE data collected over different years (six administrations: three from the February test and three from July test),…

  18. Evaluation of Transitional and Maintenance Bilingual Programs.

    ERIC Educational Resources Information Center

    Medina, Marcello, Jr.; Escamilla, Kathy

    1992-01-01

    Studies the long-term effects of transitional (TBE) and maintenance (MBE) bilingual instructional programs on development of native and English oral language proficiency for 125 TBE-instructed Vietnamese and 298 MBE-instructed Hispanic American children from kindergarten through second grade. Discusses significant findings on positive and negative…

  19. Bidding Statutes and Minority Business Set-Aside Plans.

    ERIC Educational Resources Information Center

    Ottosen, Karl R.; Nathan, Robert

    1989-01-01

    Discusses the requirements of a typical bidding statute and explores the ramifications of the U.S. Supreme Court's "City of Richmond v. Crosan Company" decision for minority business (MBE) set-aside programs. School districts with MBE set-aside plans should determine whether these plans are constitutionally sufficient before beginning a public…

  20. Comparative Structural Characterization of Thin Al0.2Ga0.8 N/GaN and In0.17Al0.83N/GaN Heterostructures Grown on Si(111), by MBE, with Variation of Buffer Thickness

    NASA Astrophysics Data System (ADS)

    Chowdhury, Subhra; Borisov, Boris; Chow, Peter; Biswas, Dhrubes

    2015-11-01

    We report growth, by plasma-assisted molecular beam epitaxy, of thin Al0.2Ga0.8N/GaN and In0.17Al0.83N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600, 400, and 200 nm). Successful growth by critical optimization of growth conditions was followed by comparative characterization of these heterostructures by use of high resolution x-ray diffraction (HRXRD), including reciprocal space mapping (RSM), room-temperature photoluminescence (RT-PL), and high resolution transmission electron microscopy (HRTEM). The effect of different buffer thickness on the threading dislocation (TD) density of a thin 1.5 nm Al0.2Ga0.8N/In0.17Al0.83N-1.25 nm GaN-1.5 nm Al0.2Ga0.8N/In0.17Al0.83N heterostructure, was also studied. Analysis revealed increasing tensile strain with decreasing buffer thickness for AlGaN-based samples; this was confirmed by the red-shift of the GaN RT-PL peak. Reduced strain in lattice-matched InAlN-based samples resulted in a blue-shift of the GaN RT-PL peak; this was indicative of better crystallographic quality than for the AlGaN/GaN samples, which was proved by XRD-FWHM and RSM results. A substantial reduction of TD density from approximately 1010 to 108 cm-2 with increasing buffer thickness resulted in a smooth thin active region for both thick buffer structures whereas the lattice-matched InAlN/GaN-based thick buffer resulted in less effect on TD and a smooth and prominent thin active region.

  1. Transatlantic Transport of Fermilab 3.9 GHZ Cryomodule to DESY

    SciTech Connect

    McGee, M.W.; Grimm, C.; Olis, D.; Schappert, Warren; /Fermilab

    2009-05-01

    In an exchange of technology agreement, Fermilab has built and delivered a 3.9 GHz (3rd harmonic) cryomodule to Deutsches Elektron-Synchrotron (DESY) Laboratory to be installed in the TTF/FLASH beamline. Transport to Hamburg, Germany was completed via a combination of flatbed air ride truck and commercial aircraft, while minimizing transition or handling points. Initially, destructive testing of fragile components, transport and corresponding alignment stability studies were performed in order to assess the risk associated with transatlantic travel of a fully assembled cryomodule. Data logged triaxial acceleration results of the transport with a comparison to the transport study predicted values are presented.

  2. Hadron multiplicity in pp and AA collisions at LHC from the color glass condensate

    SciTech Connect

    Levin, Eugene; Rezaeian, Amir H.

    2010-09-01

    We provide quantitative predictions for the rapidity, centrality and energy dependencies of inclusive charged-hadron productions for the forthcoming LHC measurements in nucleus-nucleus collisions based on the idea of gluon saturation in the color-glass condensate framework. Our formulation gives very good descriptions of the first data from the LHC for the inclusive charged-hadron production in proton-proton collisions, the deep inelastic scattering at the Hadron-Elektron-Ring-Anlage at small Bjorken x, and the hadron multiplicities in nucleus-nucleus collisions at the Relativistic Heavy Ion Collider.

  3. Heavy Ion Fusion Accelerator Research (HIFAR)

    SciTech Connect

    Not Available

    1991-04-01

    This report discusses the following topics: emittance variations in current-amplifying ion induction lina; transverse emittance studies of an induction accelerator of heavy ions; drift compression experiments on MBE-4 and related emittance; low emittance uniform- density C{sub s}+ sources for heavy ion fusion accelerator studies; survey of alignment of MBE-4; time-of-flight dependence on the MBE-4 quadrupole voltage; high order calculation of the multiple content of three dimensional electrostatic geometries; an induction linac injector for scaled experiments; induction accelerator test module for HIF; longitudinal instability in HIF beams; and analysis of resonant longitudinal instability in a heavy ion induction linac.

  4. Heavy ion fusion half year report, October 1, 1984-March 30, 1985

    SciTech Connect

    Not Available

    1985-06-01

    Summaries of research are given for each of the following experiments: (1) MBE-4: a four-beam induction linac experiment, (2) performance of the MBE-4 injector, (3) design procedure for acceleration and bunching in an induction linac, (4) longitudinal dynamics of MBE-4, (5) transverse beam dynamics, (6) envelope functions of high-current beam, (7) electrostatic energy analyzer, (8) longitudinal beam control, (9) a capacitive beam-charge monitor for SBTE, (10) materials R and D, (11) simulations of Robertson's lens, and (12) SBTE high sigma/sub 0/ high-current stability limits. (MOW)

  5. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  6. Silicon sheet with molecular beam epitaxy for high efficiency solar cells

    NASA Technical Reports Server (NTRS)

    Allen, F. G.

    1983-01-01

    The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

  7. Inversion domains in GaN grown on sapphire

    SciTech Connect

    Romano, L.T.; Northrup, J.E.; OKeefe, M.A.

    1996-10-01

    Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. {copyright} {ital 1996 American Institute of Physics.}

  8. GaSb thermophotovoltaics: current challenges and solutions

    NASA Astrophysics Data System (ADS)

    Rahimi, N.; Herrera, D. J.; Aragon, A.; Shima, D. M.; Romero, O. S.; Rotter, T. J.; Busani, T.; Lavrova, O.; Balakrishnan, G.; Lester, L. F.

    2015-03-01

    GaSb thermophotovoltaic cells fabricated using Molecular Beam Epitaxy (MBE) and ion implantation techniques are studied. Challenges including different defect formation mechanisms using MBE and ion-induced defects using ion implantation were investigated by cross-sectional Transmission Electron Microscopy (XTEM), X-Ray Diffraction spectroscopy (XRD) and Scanning Electron Microscopy (SEM). For MBE grown TPVs, several approaches were used to suppress defects, including substrate preparation and using different MBE reactors. For ion-implanted TPVs, different implant doses and energies were tested to minimize the crystal damage and various Rapid Thermal Anneal (RTA) process recipes were studied to maximize the crystal recovery. Large area TPV cells with 1 × 1 cm dimensions were fabricated using these techniques, then electrically and optically characterized. Ideality factors and dark saturation currents were measured and compared for various TPVs.

  9. 40 CFR 33.205 - How does an entity become certified by EPA?

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... standards of this subpart. (2) Entities seeking MBE or WBE certification shall cooperate fully with requests.... Perform an on-site visit to local job sites if there are such sites on which the entity is working at...

  10. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  11. 8-9 and 14-15 meu Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

    NASA Technical Reports Server (NTRS)

    Guanapala, S.; Bandara, S.; Singh, A.; Liu, J.; Rafol, S.; Luong, E.; Mumolo, J.; Tran, N.; Vincent, J.; Shott, C.; Long, J.; LeVan, P.

    1999-01-01

    An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).

  12. 23 CFR 230.202 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or disadvantaged business enterprise (DBE), all defined under 49 CFR part 23. This expanded definition is used...

  13. An Investigation into the Effect of High-Power Pulse IR Radiation on the Properties of Surfaces of CdxHg1-хTe Heteroepitaxial Layers

    NASA Astrophysics Data System (ADS)

    Boltar', K. O.; Burlakov, I. D.; Voitsekhovskii, А. V.; Sizov, А. L.; Sredin, V. G.; Talipov, N. Kh.; Shul'ga, S. А.

    2013-12-01

    The results of investigations into radiation modification of surfaces of Cd x Hg1- x Te (CMT) heteroepitaxial layers grown by molecular-beam and liquid-phase epitaxy (MBE- and LPE CMT HEL) affected by high-power pulse short-wavelength IR radiation are discussed. It is found that the surfaces of MBE CMT HEL and LPE CMT are enhanced by mercury as a result of high-power pulse short-wavelength IR radiation.

  14. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  15. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  16. Twenty years of molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  17. Examining the Mid- Brunhes Event in the Terrestrial Arctic: an Organic Geochemical Record from Lake El'gygytgyn, Russia

    NASA Astrophysics Data System (ADS)

    Habicht, H.; Castañeda, I. S.; Brigham-Grette, J.

    2015-12-01

    The characteristic glacial and interglacial cycles of the Pleistocene underwent a climatic transition at ~430 ka known as the Mid- Brunhes Event (MBE). Numerous studies have noted that after this transition, the amplitude of the climatic cycles increased. Despite the indication of an MBE signal in many globally distributed paleoclimate records, the geographic extent of the climatic transition remains unknown. While the MBE is expressed in a number of southern hemisphere records its presence in northern hemisphere and terrestrial records is debated. Lake El'gygytgyn is located in the far- east Russian Arctic and provides the longest, most continuous record of Arctic climate (3.6 Ma). This study examines organic biomarkers in the Lake El'gygytgyn sediment core to determine if the MBE is expressed in the terrestrial Arctic. The paleoclimate reconstruction spans the interval of 0- 730 ka at a resolution of ~1.5 ka. Branched glycerol dialkyl glycerol tetraethers (brGDGTs) are utilized to reconstruct temperature variability and plant leaf wax n-alkanes are used to examine vegetation changes throughout the study interval. Statistical analysis of this, and other existing proxy data, indicates that a signal of the MBE is preserved in the Lake El'gygytgyn sediment record. BrGDGT temperature reconstructions indicate the terrestrial Arctic experienced both the warmest interglacial periods and coldest glacial periods after the MBE climatic transition. Arid glacial intervals and wetter interglacials are recorded by changes in the average chain length of n- alkanes, with wetter interglacials predominating after the MBE. Possibly, changes in Antarctic bottom water production and associated variability in North Pacific upwelling are responsible for transmitting the MBE signal from the southern hemisphere to Lake El'gygytgyn.

  18. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  19. Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation

    NASA Technical Reports Server (NTRS)

    Hecht, M. H.; Bell, L. D.; Kaiser, W. J.; Grunthaner, F. J.

    1989-01-01

    Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

  20. Maqui berry (Aristotelia chilensis) and the constituent delphinidin glycoside inhibit photoreceptor cell death induced by visible light.

    PubMed

    Tanaka, Junji; Kadekaru, Takashi; Ogawa, Kenjirou; Hitoe, Shoketsu; Shimoda, Hiroshi; Hara, Hideaki

    2013-08-15

    The protective effects of maqui berry (Aristotelia chilensis) extract (MBE) and its major anthocyanins [delphinidin 3,5-O-diglucoside (D3G5G) and delphinidin 3-O-sambubioside-5-O-glucoside (D3S5G)] against light-induced murine photoreceptor cells (661W) death were evaluated. Viability of 661W after light treatment for 24 h, assessed by the tetrazolium salt (WST-8) assay and Hoechst 33342 nuclear staining, was improved by addition of MBE, D3G5G, and D3S5G. Intracellular radical activation in 661W, evaluated using the reactive oxygen species (ROS)-sensitive probe 5-(and-6)-chloromethyl-2,7-dichlorodihydro fluorescein diacetate acetyl ester (CM-H2DCFDA), was reduced by MBE and its anthocyanins. The anti-apoptosis mechanism of MBE was evaluated by light-induced phosphorylation of p38. MBE significantly suppressed the light-induced phosphorylation of p38. These findings indicate that MBE and its anthocyanidins suppress the light-induced photoreceptor cell death by inhibiting ROS production, suggesting that the inhibition of phosphorylated-p38 may be involved in the underlying mechanism. PMID:23561088

  1. Effect of tensile deformation on micromagnetic parameters in 0.2% carbon steel and 2.25Cr-1Mo steel

    SciTech Connect

    Moorthy, V.; Vaidyanathan, S.; Jayakumar, T.; Raj, B.; Kashyap, B.P.

    1999-04-23

    The influence of prior tensile deformation on the magnetic Barkhausen emission (MBE) and the hysteresis (B-H) curve has been studied in 0.2% carbon steel and 2.25Cr-1Mo steel under different tempered conditions. This study shows that the micromagnetic parameters can be used to identify the four stages of deformation, namely (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding and (4) progressive plastic deformation. However, it is observed that the MBE profile shows more distinct changes at different stages of tensile deformation than the hysteresis curve. It has been established that the beginning of microplastic yielding and macroyielding can be identified from the MBE profile which is not possible from the stress-strain plot. The onset of microplastic yielding can be identified from the decrease in the MBE peak height. The macroyielding can be identified from the merging of the initially present two-peak MBE profile into a single central peak with relatively higher peak height and narrow profile width. The difference between the variation of MBE and hysteresis curve parameters with strain beyond macroyielding indicates the difference in the deformation state of the surface and bulk of the sample.

  2. A hybrid epitaxy method for InAs on GaP

    SciTech Connect

    Chen, A.; Yulius, A.; Woodall, J. M.; Broadbridge, C.C.

    2004-10-18

    The interface formation mechanism during the molecular-beam epitaxy (MBE) of InAs/GaP has been studied with the aid of the In-Ga-P phase diagram. It is discovered that an initial dissolution and crystallization process similar to liquid phase epitaxy (LPE) may happen at sufficiently high temperature, resulting in a graded composition at the interface. Consequently, 'parasitic LPE/MBE' is the name for this hybrid form of MBE. High-resolution TEM images confirm the existence of the interfacial layer in the sample grown at high temperature. The graded interface smears out the band offset and leads to a nonrectifying heterojunction. Low-temperature (LT) MBE growth can turn off the LPE component, enabling the growth of an abrupt interface. Based on this 'LPE/MBE' model, a LT MBE technique is developed to grow an abrupt InAs/InGaP interface for heterojunction power Schottky rectifiers. The LT InAs/InGaP heterojunction demonstrates nearly ideal Schottky rectifier characteristics, while the sample grown at high temperature shows resistive ohmic characteristics. The LT InAs/InGaP Schottky diode also demonstrates good stability with respect to anneal temperature, similar to the InAs/GaP heterojunctions.

  3. Comparison of total water vapor column from GOME-2 on MetOp-A against ground-based GPS measurements at the Iberian Peninsula.

    PubMed

    Román, R; Antón, M; Cachorro, V E; Loyola, D; Ortiz de Galisteo, J P; de Frutos, A; Romero-Campos, P M

    2015-11-15

    Water vapor column (WVC) obtained by GOME-2 instrument (GDP-4.6 version) onboard MetOp-A satellite platform is compared against reference WVC values derived from GPS (Global Positioning System) instruments from 2007 to 2012 at 21 places located at Iberian Peninsula. The accuracy and precision of GOME-2 to estimate the WVC is studied for different Iberian Peninsula zones using the mean (MBE) and the standard deviation (SD) of the GOME-2 and GPS differences. A direct comparison of all available data shows an overestimation of GOME-2 compared to GPS with a MBE of 0.7 mm (10%) and a precision quantified by a SD equals to 4.4mm (31%). South-Western zone presents the highest overestimation with a MBE of 1.9 mm (17%), while Continental zone shows the lowest SD absolute value (3.3mm) due mainly to the low WVC values reached at this zone. The influence of solar zenith angle (SZA), cloud fraction (CF), and the type of surface and its albedo on the differences between GOME-2 and GPS is analyzed in detail. MBE and SD increase when SZA increases, but MBE decreases (taking negative values) when CF increases and SD shows no significant dependence on CF. Under cloud-free conditions, the differences between WVC from GOME-2 and GPS are within the WVC error given by GOME-2. The changes of MBE and SD on Surface Albedo are not so evident, but MBE slightly decreases when the Surface Albedo increases. WVC from GOME-2 is, in general, more precise for land than for sea pixels. PMID:26172599

  4. Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2014-07-01

    We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

  5. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  6. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    NASA Astrophysics Data System (ADS)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  7. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  8. The Ciprofloxacin Impact on Biofilm Formation by Proteus Mirabilis and P. Vulgaris Strains

    PubMed Central

    Kwiecinska-Pirog, Joanna; Skowron, Krzysztof; Bartczak, Wojciech; Gospodarek-Komkowska, Eugenia

    2016-01-01

    Background Proteus spp. bacilli belong to opportunistic human pathogens, which are primarily responsible for urinary tract and wound infections. An important virulence factor is their ability to form biofilms that greatly reduce the effectiveness of antibiotics in the site of infection. Objectives The aim of this study was to determine the value of the minimum concentration of ciprofloxacin that eradicates a biofilm of Proteus spp. strains. Materials and Methods A biofilm formation of 20 strains of P. mirabilis and 20 strains of P. vulgaris were evaluated by a spectrophotometric method using 0.1% 2, 3, 5-Triphenyl-tetrazolium chloride solution (TTC, AVANTORTM). On the basis of the results of the absorbance of the formazan, a degree of reduction of biofilm and minimum biofilm eradication (MBE) values of MBE50 and MBE90 were determined. Results All tested strains formed a biofilm. A value of 1.0 μg/mL ciprofloxacin is MBE50 for the strains of both tested species. An MBE90 value of ciprofloxacin for isolates of P. vulgaris was 2 μg/mL and for P. mirabilis was 512 μg/mL. Conclusions Minimum biofilm eradication values of ciprofloxacin obtained in the study are close to the values of the minimal inhibition concentration (MIC). PMID:27303616

  9. Synthesis and evaluation of MgF2 coatings by chemical conversion on magnesium alloys for producing biodegradable orthopedic implants of temporary use

    NASA Astrophysics Data System (ADS)

    Casanova, P. Y.; Jaimes, K. J.; Parada, N. J.; Hernández-Barrios, C. A.; Aparicio, M.; Viejo, F.; Coy, A. E.

    2013-11-01

    The aim of the present work was the synthesis of biodegradable MgF2 coatings by chemical conversion on the commercial Elektron 21 and AZ91D magnesium alloys, in aqueous HF solutions for different concentrations and temperatures. The chemical composition and morphology of the coatings were analyzed by scanning electron microscopy (SEM-EDX) and X-ray diffraction (XRD). On the other hand, their corrosion behavior was evaluated by gravimetric and electrochemical measurements in Hank's solution at 37°C for different immersion times. The experimental results revealed that chemical conversion in HF produced MgF2 coatings which corrosion resistance was enhanced by increasing the HF concentration. Further, the microstructure and composition of the base alloy played a key role on the growth and degradation mechanisms of the MgF2 coatings.

  10. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey. J.; Wang, George T.

    2015-10-01

    Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1 1 bar 02) r-plane sapphire substrates. Dislocation free [ 11 2 bar 0 ] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar { 10 1 bar 0 } side facets, which appear due to a decrease in relative growth rate of the { 10 1 bar 0 } facets to the { 10 1 bar 1 } and { 10 1 bar 1 } facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  11. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  12. The controlled growth of perovskite thin films: Opportunities, challenges, and synthesis

    SciTech Connect

    Schlom, D.G.; Theis, C.D.; Hawley, M.E.

    1997-10-01

    The broad spectrum of electronic and optical properties exhibited by perovskites offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the monolayer-level; its use for the integration of perovskites with similar nanoscale customization appears promising. Composition control and oxidation are often significant challenges to the growth of perovskites by MBE, but we show that these can be met through the use of purified ozone as an oxidant and real-time atomic absorption composition control. The opportunities, challenges, and synthesis of oxide heterostructures by reactive MBE are described, with examples taken from the growth of oxide superconductors and oxide ferroelectrics.

  13. Molecular beam epitaxy of SrTiO3 with a growth window

    NASA Astrophysics Data System (ADS)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  14. Differential Adhesion of Tumor Cells to Capillary Endothelial Cells in vitro

    NASA Astrophysics Data System (ADS)

    Alby, Laverna; Auerbach, Robert

    1984-09-01

    Adhesion studies were carried out to determine the relative ability of glioma cells and ovary-derived teratoma cells to adhere to endothelial cells obtained from mouse brain capillaries (designated MBE cell line) or mouse ovaries (designated MOE cell line). The teratoma cells showed preferential adhesion to MOE cells, whereas the glioma cells showed preferential adhesion to the MBE cell line. In contrast, the glioma and teratoma cells adhered equally to L929 and 3T3 fibroblasts. A testicular teratoma with ovary-seeking properties in vivo also adhered preferentially to MOE cells, while the preference for MBE cells was shared by glioma cells with an endothelioma and a bladder tumor line. The endothelioma, interestingly, showed a marked preferential adhesion to 3T3 cells, thus distinguishing it from the glioma. The experiments demonstrate that capillary endothelial cells derived from different sources are not alike and that differences expressed at the cell surface of these cells can be distinguished by tumor cells.

  15. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  16. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  17. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  18. Chemical Composition and Thermal Stability of Atomic Force Microscope-Assisted Anodic Oxides as Nanomasks for Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Cha, Kyu Man; Shibata, Kenji; Kamiko, Masao; Yamamoto, Ryoichi; Hirakawa, Kazuhiko

    2011-12-01

    We have investigated the thermal stability of GaAs-oxides grown by atomic force microscope (AFM)-assisted anodic oxidation to identify the conditions suitable for fabricating oxide nanomasks for molecular beam epitaxy (MBE). The oxides grown at bias voltages, Vox, less than 30 V were desorbed after standard thermal cleaning in MBE, while the oxide patterns fabricated at Vox ≥40 V survived on the GaAs surfaces. From X-ray photoemission spectroscopy, we have found that the better thermal stability of AFM-oxides grown at Vox > 40 V can be attributed to the formation of Ga2O3 and that Ga2O3 can be used as nanomasks for site-controlled MBE growth.

  19. Molecular beam epitaxy of SrTiO{sub 3} with a growth window

    SciTech Connect

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-20

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO{sub 3} films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO{sub 3} films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  20. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Ratcliff, C.; Grassman, T. J.; Ringel, S. A.; Carlin, J. A.

    2011-10-03

    Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P{sub 2}:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon.

  1. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

    SciTech Connect

    Soshnikov, I. P.; Afanas'ev, D. E.; Cirlin, G. E.; Petrov, V. A.; Tanklevskaya, E. M.; Samsonenko, Yu. B.; Bouravlev, A. D.; Khrebtov, A. I.; Ustinov, V. M.

    2011-06-15

    The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10-150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place.

  2. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  3. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    SciTech Connect

    Shi, B. M.; Xie, M. H.; Wu, H. S.; Wang, N.; Tong, S. Y.

    2006-10-09

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE.

  4. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  5. Two Different Methods for Numerical Solution of the Modified Burgers' Equation

    PubMed Central

    Karakoç, Seydi Battal Gazi; Başhan, Ali; Geyikli, Turabi

    2014-01-01

    A numerical solution of the modified Burgers' equation (MBE) is obtained by using quartic B-spline subdomain finite element method (SFEM) over which the nonlinear term is locally linearized and using quartic B-spline differential quadrature (QBDQM) method. The accuracy and efficiency of the methods are discussed by computing L 2 and L ∞ error norms. Comparisons are made with those of some earlier papers. The obtained numerical results show that the methods are effective numerical schemes to solve the MBE. A linear stability analysis, based on the von Neumann scheme, shows the SFEM is unconditionally stable. A rate of convergence analysis is also given for the DQM. PMID:25162064

  6. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  7. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  8. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  9. Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 µm on Si(111)

    NASA Astrophysics Data System (ADS)

    Baba, Masakazu; Nakamura, Kotaro; Du, Weijie; Ajmal Khan, M.; Koike, Shintaro; Toko, Kaoru; Usami, Noritaka; Saito, Noriyuki; Yoshizawa, Noriko; Suemasu, Takashi

    2012-09-01

    100-nm-thick BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). The Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly dependent on the RDE growth conditions and was varied from approximately 0.2 to more than 4 µm.

  10. Perspective: Oxide molecular-beam epitaxy rocks!

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the "gold standard" synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  11. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

    SciTech Connect

    Aho, A.; Korpijärvi, V.-M.; Tukiainen, A.; Puustinen, J.; Guina, M.

    2014-12-07

    We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%.

  12. Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

  13. On local pairs vs. BCS: Quo vadis high-Tc superconductivity

    DOE PAGESBeta

    Pavuna, D.; Dubuis, G.; Bollinger, A. T.; Wu, J.; He, X.; Bozovic, I.

    2016-07-28

    Since the discovery of high-temperature superconductivity in cuprates, proposals have been made that pairing may be local, in particular in underdoped samples. Furthermore, we briefly review evidence for local pairs from our experiments on thin films of La 2–xSrxCuO4, synthesized by atomic layer-by-layer molecular beam epitaxy (ALL-MBE).

  14. Convergence of the Many-Body Expansion for Energy and Forces for Classical Polarizable Models in the Condensed Phase.

    PubMed

    Demerdash, Omar; Head-Gordon, Teresa

    2016-08-01

    We analyze convergence of energies and forces for the AMOEBA classical polarizable model when evaluated as a many-body expansion (MBE) against the corresponding N-body parent potential in the context of a condensed-phase water simulation. This is in contrast to most MBE formulations based on quantum mechanics, which focus only on convergence of energies for gas-phase clusters. Using a single water molecule as a definition of a body, we find that truncation of the MBE at third order, 3-AMOEBA, captures direct polarization exactly and yields apparent good convergence of the mutual polarization energy. However, it renders large errors in the magnitude of polarization forces and requires at least fourth-order terms in the MBE to converge toward the parent potential gradient values. We can improve the convergence of polarization forces for 3-AMOEBA by embedding the polarization response of dimers and trimers within a complete representation of the fixed electrostatics of the entire system. We show that the electrostatic embedding formalism helps identify the specific configurations involving linear hydrogen-bonding arrangements that are poorly convergent at the 3-body level. By extending the definition of a body to be a large water cluster, we can reduce errors in forces to yield an approximate polarization model that is up to 10 times faster than the parent potential. The 3-AMOEBA model offers new ways to investigate how the properties of bulk water depend on the degree of connectivity in the liquid. PMID:27405002

  15. Molecular Beam Epitaxial Growth and Properties of CoFe2O4 on MgO(001)

    SciTech Connect

    Chambers, Scott A.; Farrow, Robin F.; Maat, S.; Toney, M.; Folks, L.; Catalano, J.G.; Trainor, T.P.; Brown, G.E. Jr.

    2002-04-01

    We have grown single-crystal Co ferrite (CoFe2O4) on MgO(001) by oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE), and have characterized the composition, structure, surface morphology, and magnetic properties by a number of methods The as-grown OPA-MBE material forms a perfect inverse spinel, in which all Co is in the? formal oxidation state, and occupies octahedral sites within the cation sublattice. The OPA-MBE film surfaces are very flat, with mean roughnesses of only a few A, and exhibit large, stable magnetic domains. The measured moment per unit volume is 250 emu/cm3, and the saturation magnetization for films in the 1000A film thickness range is {approx}60% of that of bulk Co ferrite. The material also exhibits strain-dependent magnetic anisotropy that can be understood by considering the various contributions to the total magnetic energy. The overall quality of epitaxial Co ferrite grown on MgO by OPA-MBE is superior in every respect to that obtained using pulsed laser deposition as the growth method.

  16. Can the Differences between Education and Neuroscience Be Overcome by Mind, Brain, and Education?

    ERIC Educational Resources Information Center

    Samuels, Boba M.

    2009-01-01

    The new field of Mind, Brain, and Education (MBE)--sometimes called educational neuroscience--is posited as a mediator between neuroscience and education. Several foundational concerns, however, can be raised about this emerging field. The differences between neuroscience and education are many, including differences in their histories,…

  17. Mind, Brain and Education: A Decade of Evolution

    ERIC Educational Resources Information Center

    Schwartz, Marc

    2015-01-01

    This article examines the evolution of Mind, Brain, and Education (MBE), the field, alongside that of the International Mind, Brain and Education Society (IMBES). The reflections stem mostly from my observations while serving as vice president, president-elect, and president of IMBES during the past 10 years. The article highlights the evolution…

  18. An Education Grounded in Biology: Interdisciplinary and Ethical Considerations

    ERIC Educational Resources Information Center

    Gardner, Howard

    2009-01-01

    Work in the new area of Mind, Brain, and Education (MBE) raises epistemological and ethical issues. With respect to epistemology, the norms of the component disciplines must be honored and the resulting amalgam must be more than a mere sum of the parts. With respect to ethics, the roles of scientist, educator, and practitioner each raise ethical…

  19. A First Course in Mind, Brain, and Education

    ERIC Educational Resources Information Center

    Blake, Peter R.; Gardner, Howard

    2007-01-01

    We describe what may well be the first course devoted explicitly to the topic of Mind, Brain, and Education (MBE). In the course, students examine four central topics (literacy, numeracy, emotion/motivation, and conceptual change) through the perspectives of psychology, neuroscience, genetics, and education. We describe the pedagogical tools we…

  20. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  1. Why Model-Based Engineering and Manufacturing Makes Sense for the Plants and Laboratories of the Nuclear Weapon Complex

    SciTech Connect

    Franklin, K W; Howell, L N; Lewis, D G; Neugebauer, C A; O'Brien, D W; Schilling, S A

    2001-05-15

    The purpose of this White Paper is to outline the benefits we expect to receive from Model-Based Engineering and Manufacturing (MBE/M) for the design, analysis, fabrication, and assembly of nuclear weapons for upcoming Life Extension Programs (LEPs). Industry experiences with model-based approaches and the NNSA/DP investments and experiences, discussed in this paper, indicate that model-based methods can achieve reliable refurbished weapons for the stockpile with less cost and time. In this the paper, we list both general and specific benefits of MBE/M for the upcoming LEPs and the metrics for determining the success of model-based approaches. We also present some outstanding issues and challenges to deploying and achieving long-term benefit from the MBE/M. In conclusion, we argue that successful completion of the upcoming LEPs--with very aggressive schedule and funding restrictions--will depend on electronic model-based methods. We ask for a strong commitment from LEP managers throughout the Nuclear Weapons Complex to support deployment and use of MBE/M systems to meet their program needs.

  2. Heavy ion fusion end of the year report, April 1, 1984-September 30, 1984

    SciTech Connect

    Not Available

    1984-12-01

    Research progress is reported for each of the following areas: (1) multiple-beam experiment, (2) current amplification in MBE-4, (3) single-beam transport experiment, (4) neutral beam focusing experiment, (5) range energy measurements, (6) source development work, and (7) induction linac component development. (MOW)

  3. Nitride semiconductors for ultraviolet detection

    NASA Astrophysics Data System (ADS)

    Davis, Robert F.; Gruss, K.; Hanser, D.; Perry, B.; Smith, L.

    1993-12-01

    Monocrystalline thin films of AlN and GaN have been deposited on vicinal alpha(6H)-SiC(0001) wafers via gas-source MBE and cold-wall metalorganic (MO) CVD and extensively investigated via high-resolution TEM. Elemental metal sources combined with activated nitrogen generated using an ECR plasma were employed in the MBE system; triethylgallium, triethylaluminum and ammonia were used in the MOCVD system. The MBE research has also included n-(Si) and p-type(Mg) doping and the creation of p-n junctions. The effects on growth of T, P, and MO flux have been investigated in the MOCVD work. Below the critical thickness, AlN only contains threading dislocations emanating from the misfit dislocations; above this thickness, defects parallel to the growth surface greatly increase. The defect density of AlN grown on SiC at 1100 C is much lower than that contained in materials deposited at 700 C. Deposition of GaN on an AlN buffer layer previously deposited on sapphire or SiC results in a larger number of dislocations parallel to the growth surface. A system for the deposition of InN and its solid solutions which addresses the problems of the low decomposition pressure has also been designed. The feasibility of designing an ammonia cracker cell for the MBE system to provide an alternative source of activated nitrogen is being investigated.

  4. Linking Mind, Brain, and Education to Clinical Practice: A Proposal for Transdisciplinary Collaboration

    ERIC Educational Resources Information Center

    Ronstadt, Katie; Yellin, Paul B.

    2010-01-01

    It has been suggested that the field of Mind, Brain, and Education (MBE) requires a stable infrastructure for translating research into practice. Hinton and Fischer (2008) point to the academic medical center as a model for similar translational work and suggest a similar approach for linking scientists to research schools. We propose expanding…

  5. 30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    30. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ATOP PARKING STRUCTURE (MBE BUILDING AT LEFT REAR) (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  6. 23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    23. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM ALAMEDA STREET; THE REA LOADING DOCK AND MBE BUILDING ARE VISIBLE ON THE FAR SIDE OF THE PARKING LOT (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  7. 32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    32. VIEW TO EAST ALONG GENERAL ALIGNMENT OF PROPOSED EXTENSION OF EL MONTE BUSWAY FROM THIRD FLOOR OF MBE BUILDING SHOWING ROOF OF REA LOADING DOCK (Asano) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

  8. A Substantive Process Analysis of Responses to Items from the Multistate Bar Examination

    ERIC Educational Resources Information Center

    Bonner, Sarah M.; D'Agostino, Jerome V.

    2012-01-01

    We investigated examinees' cognitive processes while they solved selected items from the Multistate Bar Exam (MBE), a high-stakes professional certification examination. We focused on ascertaining those mental processes most frequently used by examinees, and the most common types of errors in their thinking. We compared the relationships between…

  9. Screw dislocations in GaN grown by different methods

    SciTech Connect

    Liliental-Weber, Z.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Morkoc, H.

    2003-05-27

    A study of screw dislocations in Hydride-Vapor-Phase-Epitaxy (HVPE) template and Molecular-Beam-Epitaxy (MBE) over-layers was performed using Transmission Electron Microscopy (TEM) in plan-view and in cross-section. It was observed that screw dislocations in the HVPE layers were decorated by small voids arranged along the screw axis. However, no voids were observed along screw dislocations in MBE overlayers. This was true both for MBE samples grown under Ga-lean and Ga-rich conditions. Dislocation core structures have been studied in these samples in the plan-view configuration. These experiments were supported by image simulation using the most recent models. A direct reconstruction of the phase and amplitude of the scattered electron wave from a focal series of high-resolution images was applied. It was shown that the core structures of screw dislocations in the studied materials were filled. The filed dislocation cores in an MBE samples were stoichiometric. However, in HVPE materials, single atomic columns show substantial differences in intensities and might indicate the possibility of higher Ga concentration in the core than in the matrix. A much lower intensity of the atomic column at the tip of the void was observed. This might suggest presence of lighter elements, such as oxygen, responsible for their formation.

  10. Group Blogs as Toolkits to Support Learning Environments in Statistics Subject: A Qualitative Case Study

    ERIC Educational Resources Information Center

    Hashim, Mohamad Hisyam Mohd

    2012-01-01

    In this paper, we describe the introduction of blogs to a class of Masters in Technical and Vocational Education students taking the MBE 1223 Statistics in Education module in Universiti Tun Hussein Onn Malaysia (UTHM). The purpose of the analysis is to elaborate on the perception of the participants towards blogs before, during and after training…

  11. 78 FR 70015 - Meeting of the National Advisory Council on Minority Business Enterprise

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-22

    ... Enterprise AGENCY: Minority Business Development Agency, U.S. Department of Commerce. ACTION: Notice of open meeting. SUMMARY: The National Advisory Council on Minority Business Enterprise (NACMBE) will hold its...) Definition of Minority Business Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and...

  12. 77 FR 68734 - Meeting of the National Advisory Council on Minority Business Enterprise

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-16

    ... Enterprise AGENCY: Minority Business Development Agency, U.S. Department of Commerce. ACTION: Notice of open meeting. SUMMARY: The National Advisory Council for Minority Business Enterprise (NACMBE) will hold its... Business Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and (3) Strategic Alliances...

  13. 77 FR 25142 - Meeting of the National Advisory Council on Minority Business Enterprise

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-27

    ... Enterprise AGENCY: Minority Business Development Agency, U.S. Department of Commerce. ACTION: Notice of an open meeting. SUMMARY: The National Advisory Council for Minority Business Enterprise (NACMBE) will... Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and (3) Strategic Alliances &...

  14. 76 FR 71514 - Meeting of the National Advisory Council on Minority Business Enterprise

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-18

    ... Enterprise AGENCY: Minority Business Development Agency, U.S. Department of Commerce. ACTION: Notice of an Open Meeting. SUMMARY: The National Advisory Council for Minority Business Enterprise (NACMBE) will... Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and (3) Strategic Alliances &...

  15. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its... business enterprise” is a business which is at least 51 percent owned by one or more minority group members... owned by one or more minority group members, and whose management and daily business operations...

  16. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its... business enterprise” is a business which is at least 51 percent owned by one or more minority group members... owned by one or more minority group members, and whose management and daily business operations...

  17. 48 CFR 2426.7001 - Policy.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its... business enterprise” is a business which is at least 51 percent owned by one or more minority group members... owned by one or more minority group members, and whose management and daily business operations...

  18. The Birth of a Field and the Rebirth of the Laboratory School

    ERIC Educational Resources Information Center

    Schwartz, Marc; Gerlach, Jeanne

    2011-01-01

    We describe the emergence of a new field, "Mind Brain and Education", dedicated to the science of learning, as well as the roles researchers, policy makers, and educators need to play in developing this collaborative effort. The article highlights the challenges that MBE faces and the strategy researchers and educators in Texas are developing to…

  19. 640x486 Long-wavelength Dualband GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

    NASA Technical Reports Server (NTRS)

    Gunapala, S.; Bandara, S.; Liu, J.; Rafol, S.; Luong, E.; Mumolo, J.; Tran, N.

    1999-01-01

    An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).

  20. Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared Detectors

    NASA Technical Reports Server (NTRS)

    Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; George, T.; Gunapala, S. D.

    1993-01-01

    Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Se layers have been fabricated and demonstrated.

  1. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  2. Structural and ferroelectric properties of BaTiO 3/YBa 2Cu 3O 7 heterostructures prepared by laser molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, H. S.; Liu, Y. W.; Ma, K.; Peng, Z. Q.; Cui, D. F.; Lu, H. B.; Zhou, Y. L.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-08-01

    Heteroepitaxial BaTiO 3(BTO)/YBa 2Cu 3O 7(YBCO) thin films were grown on (100) SrTiO 3(STO) substrates by ozone assistant laser molecular beam epitaxy (L sbnd MBE). The results show that by using this technique, high quality ferroelectric/superconductor heterostructures with high crystalline quality and desirable device performance can be obtained.

  3. Insolation-induced mid-Brunhes transition in Southern Ocean ventilation and deep-ocean temperature.

    PubMed

    Yin, Qiuzhen

    2013-02-14

    Glacial-interglacial cycles characterized by long cold periods interrupted by short periods of warmth are the dominant feature of Pleistocene climate, with the relative intensity and duration of past and future interglacials being of particular interest for civilization. The interglacials after 430,000 years ago were characterized by warmer climates and higher atmospheric concentrations of carbon dioxide than the interglacials before, but the cause of this climatic transition (the so-called mid-Brunhes event (MBE)) is unknown. Here I show, on the basis of model simulations, that in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic bottom water formation and Southern Ocean ventilation. My results also show that strong westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and by changes in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward systematic difference in the astronomical parameters between the interglacials before and after 430,000 years ago. Rather than being a real 'event', the apparent MBE seems to have resulted from a series of individual interglacial responses--including notable exceptions to the general pattern--to various combinations of insolation conditions. Consequently, assuming no anthropogenic interference, future interglacials may have pre- or post-MBE characteristics without there being a systematic change in forcings. These findings are a first step towards understanding the magnitude change of the interglacial carbon dioxide concentration around 430

  4. Planktic foraminiferal responses to orbital scale oceanographic changes off the western Iberian margin over the last 900 kyr: Results from IODP site U1391

    NASA Astrophysics Data System (ADS)

    Singh, A. D.; Verma, K.; Jaiswal, S.; Alonso-Garcia, M.; Li, B.; Abrantes, F.

    2015-12-01

    This paper presents planktic foraminiferal assemblage records of the last 900 kyr from the SW Iberian margin (IODP Site U1391). The faunal records show the history of surface oceanographic changes on glacial/interglacial scales before and after the Mid-Brunhes Event (MBE), a period when a major shift in the climate pattern was recorded in other regions. Temporal variations in relative abundances of characteristic species/groups are used to infer changes in the latitudinal position of the polar/Arctic water (% Neogloboquadrina pachyderma sinistral and Turborotalita quinqueloba), influence of the transitional subpolar water mass (% N. pachyderma dextral), and subtropical water (% tropical/subtropical species/group). Past changes in the upwelling intensity and productivity pattern associated with seasonal trade wind strength are inferred from the abundance variations of Globigerina bulloides and G. bulloides + Globigerinita glutinata, respectively. Faunal data reveal the influence of cold water masses (polar/subpolar) at the examined site was more pronounced during glacial stages except for marine isotope stage (MIS) 14 and 16. The magnitude of the polar/subpolar water mass invading the study area was at maximum before the MBE during MIS 18, 20 and 22, resulting in a situation like the present day Arctic Front. Interglacial periods prior to the MBE were also relatively colder than those of the post-MBE. Our faunal based inferences are in agreement with the ice-rafted debris (IRD) concentration and N. pachyderma sinistral records of the subpolar North Atlantic sites. Based on faunal proxies, we recorded major and rapid changes in upwelling intensity and related productivity during glacial Terminations. Both the upwelling intensity and productivity significantly increased after the MBE, particularly during the interglacials MIS 7, 9 and 11. Our productivity record parallels the EPICA CH4 record suggesting teleconnections between trade winds induced productivity and the

  5. Middle to Late Pleistocene vegetation and climate change in subtropical southern East Africa

    NASA Astrophysics Data System (ADS)

    Castañeda, Isla S.; Caley, Thibaut; Dupont, Lydie; Kim, Jung-Hyun; Malaizé, Bruno; Schouten, Stefan

    2016-09-01

    In this study we investigate Pleistocene vegetation and climate change in southern East Africa by examining plant leaf waxes in a marine sediment core that receives terrestrial runoff from the Limpopo River. The plant leaf wax records are compared to a multi-proxy sea surface temperature (SST) record and pollen assemblage data from the same site. We find that Indian Ocean SST variability, driven by high-latitude obliquity, exerted a strong control on the vegetation of southern East Africa during the past 800,000 yr. Interglacial periods were characterized by relatively wetter and warmer conditions, increased contributions of C3 vegetation, and higher SST, whereas glacial periods were marked by cooler and arid conditions, increased contributions of C4 vegetation, and lower SST. We find that Marine Isotope Stages (MIS) 5e, 11c, 15e and 7a-7c are strongly expressed in the plant leaf wax records but MIS 7e is absent while MIS 9 is rather weak. Our plant leaf wax records also record the climate transition associated with the Mid-Brunhes Event (MBE) suggesting that the pre-MBE interval (430-800 ka) was characterized by higher inputs from grasses in comparison to relatively higher inputs from trees in the post-MBE interval (430 to 0 ka). Differences in vegetation and SST of southern East Africa between the pre- and post-MBE intervals appear to be related to shifts in the location of the Subtropical Front. Comparison with vegetation records from tropical East Africa indicates that the vegetation of southern East Africa, while exhibiting glacial-interglacial variability and notable differences between the pre- and post-MBE portions of the record, likely did not experience such dramatic extremes as occurred to the north at Lake Malawi.

  6. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

    DOE PAGESBeta

    Yang, Meiyin; Allard, Lawrence F.; Ji, Nian; Zhang, Xiaowei; Yu, Guang-Hua; Wang, Jian -Ping

    2013-12-12

    Small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron®717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt.% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt.% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but withmore » no preferential size features. The films formed in 5 wt.% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Here, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.« less

  7. Spatial distribution of protons at high and low altitudes in the radiation belts. Comparison of theory and experiment

    SciTech Connect

    Panasyuk, M.I.; Reizman, S.Y.; Sosnovets, E.N.

    1986-05-01

    A comparative analysis of experimental data on the spatial distributions of protons with energies (E) greater than 0.1 MeV at high and low latitudes, which were obtained on the Molniya-1, Kosmos-900, Elektron, and 1964-45A satellites, is carried out. As a result of the comparison of the experimental data relating to the measurements of protons with E - 0.2 MeV with the calculation including radial drift of particles under the action of electric and magnetic field fluctuations, it is shown that radial diffusion with a diffusion coefficient independent of geomagnetic latitude is the primary mechanism shaping the spatial distributions of protons at geomagnetic latitudes up to ..lambda.. approx. = 40/sup 0/. The results of the experiments and the calculations agree under the assumption of both magnetic and electric diffusion, but the latter case requires the inclusion of the model of a spatially inhomogeneous convection electric field. At ..lambda.. greater than or equal to 50/sup 0/ pitchangle scattering makes the primary contribution to the shaping of the spatial structure of the protons at low altitudes. A value of 2 less than or equal to n less than or equal to 4 is obtained for the exponent of the slope of the radial distribution of cold electrons N /sub e/ (r)..cap alpha.. /sup -n/ at 2 less than or equal to L less than or equal to 4.

  8. Structure-property relations and modeling of small crack fatigue behavior of various magnesium alloys

    NASA Astrophysics Data System (ADS)

    Bernard, Jairus Daniel

    Lightweight structural components are important to the automotive and aerospace industries so that better fuel economy can be realized. Magnesium alloys in particular are being examined to fulfill this need due to their attractive stiffness- and strength-to-weight ratios when compared to other materials. However, when introducing a material into new roles, one needs to properly characterize its mechanical properties. Fatigue behavior is especially important considering aerospace and automotive component applications. Therefore, quantifying the structure-property relationships and accurately predicting the fatigue behavior for these materials are vital. This study has two purposes. The first is to quantify the structure-property relationships for the fatigue behavior in an AM30 magnesium alloy. The second is to use the microstructural-based MultiStage Fatigue (MSF) model in order to accurately predict the fatigue behavior of three magnesium alloys: AM30, Elektron 21, and AZ61. While some studies have previously quantified the MSF material constants for several magnesium alloys, detailed research into the fatigue regimes, notably the microstructurally small crack (MSC) region, is lacking. Hence, the contribution of this work is the first of its kind to experimentally quantify the fatigue crack incubation and MSC regimes that are used for the MultiStage Fatigue model. Using a multi-faceted experimental approach, these regimes were explored with a replica method that used a dual-stage silicone based compound along with previously published in situ fatigue tests. These observations were used in calibrating the MultiStage Fatigue model.

  9. Fabrication of GaP/Al-oxide distributed Bragg reflectors for the visible spectrum

    NASA Astrophysics Data System (ADS)

    Pickrell, G. W.; Lin, H. C.; Chang, K. L.; Hsieh, K. C.; Cheng, K. Y.

    2001-02-01

    Using very-low temperature (VLT) molecular-beam epitaxy (MBE), polycrystalline GaP/Al-oxide distributed Bragg reflectors (DBRs) have been fabricated. The use of high-energy band gap materials, such as GaP, allows for applications in the visible spectrum with minimal absorption of photons in the DBR. Through the use of VLT-MBE and control of the group-V overpressure, the microstructure can be controlled, resulting in either amorphous or polycrystalline material. Due to the nature of the amorphous material, the requirement of lattice matching is relaxed with no adverse effects to the underlying single crystal material. Two DBRs were fabricated, one reflecting at a wavelength of 550 nm and the other 480 nm. Using six pairs of polycrystalline GaP/Al-oxide, a reflectivity of ˜95% was achieved indicating a high-quality DBR suitable for device use.

  10. Characterization of GaAs(100) surfaces by AES and LEED

    NASA Astrophysics Data System (ADS)

    Mendez, M. A.; Palomares, F. J.; Cuberes, M. T.; Gonzalez, M. L.; Soria, F.

    1991-07-01

    The most important of the GaAs surfaces for technological applications are those found on the (100) orientation, which are usually prepared by molecular beam epitaxy (MBE). However, when MBE facilities are not available an alternative method of surface preparation is by simultaneous ion bombardment and annealing cycles (SIBA), which it is known to give good results on the (111) polar faces. On (100) surfaces this treatment produces the 1 × 6, 4 × 1, and c(8 × 2) Ga-rich surface reconstructions, which we have attained sequentially for decreasing As surface concentrations. The experimental As to Ga Auger ratios of the different structures have been associated with the results given by an Auger formalism which is able to predict the surface composition of the outermost bilayer. Our results for the different surface compositions are compared with all the data available in the literature for surfaces prepared by SIBA.

  11. Mechanical properties of individual InAs nanowires studied by tensile tests

    SciTech Connect

    Li, X.; Wei, X. L. E-mail: qingchen@pku.edu.cn; Xu, T. T.; Ning, Z. Y.; Shu, J. P.; Chen, Q. E-mail: qingchen@pku.edu.cn; Wang, X. Y.; Pan, D.; Zhao, J. H.; Yang, T.

    2014-03-10

    Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ∼10%. Their fracture strength distributes in a similar range of ∼2–5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16–78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34–79 GPa with an average value of 58 GPa for MBE NWs.

  12. High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Turco, F. S.; Sandroff, C. J.; Hwang, D. M.; Ravi, T. S.; Tamargo, M. C.

    1990-08-01

    It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.

  13. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    SciTech Connect

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-08-25

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm{sup 2}/V s) and sheet charge density (>3x10{sup 13} cm{sup -2}), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to {approx}100 {omega}/{open_square} at room temperature. Fabricated 1.2 {mu}m gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of {approx}1.3 A/mm and a peak transconductance of {approx}260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

  14. Rubidium beam flux dependence of film properties of Ba1 - xRbxBiO3 deposited by molecular-beam epitaxy using distilled ozone

    NASA Astrophysics Data System (ADS)

    Ogihara, M.; Toda, F.; Makita, T.; Abe, H.

    1993-10-01

    We have focused our attention on the dependence of Ba1-xRbxBiO3 (BRBO) film composition ratio and film properties on rubidium-beam-flux intensity. BRBO films were deposited on MgO(100) substrates by molecular-beam epitaxy (MBE) using distilled ozone. Systematic measurements showed that the rubidium content was nearly independent of rubidium-beam-flux intensity in a wide beam-flux range. Therefore, it can be concluded that some degree of self-control of rubidium stoichiometry is actually possible in BRBO film growth by MBE. This study also revealed that the BRBO film properties had strong dependences on rubidium-beam-flux intensity even in the range for self-control of rubudium stoichiometry. Our study also clarified that rubidium-beam flux affects the barium content in the BRBO film.

  15. Growth and properties of (Ga,Mn)As films with high Mn concentration

    NASA Astrophysics Data System (ADS)

    Takamura, K.; Matsukura, F.; Ohno, Y.; Ohno, H.

    2001-06-01

    (Ga, Mn)As films with high nominal Mn concentration (0MBE), growth temperature Ts=180 °C. Reflection high energy electron diffraction patterns indicate epitaxial growth of (Ga, Mn)As for x<0.1, whereas they show spotty patterns for x>0.1, which turn to polycrystalline features when x>0.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE.

  16. Dislocation core in GaN

    SciTech Connect

    Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack; O'Keefe, Michael A.

    2002-02-20

    Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders of magnitude higher dislocation density than that for III-V arsenide and phosphide diodes. Understanding and determination of dislocation cores in GaN is crucial since both theoretical and experimental work are somewhat contradictory. Transmission Electron Microscopy (TEM) has been applied to study the layers grown by hydride vapor-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) (under Ga rich conditions) in plan-view and cross-section samples. This study suggests that despite the fact that voids are formed along the dislocation line in HVPE material, the dislocations have closed cores. Similar results of closed core are obtained for the screw dislocation in the MBE material, confirming earlier studies.

  17. Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

    SciTech Connect

    Blacksberg, Jordana; Hoenk, Michael E.; Elliott, S. Tom; Holland, Stephen E.; Nikzad, Shouleh

    2005-12-19

    A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 deg. C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

  18. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  19. High-efficiency Al sub 0. 22 Ga sub 0. 78 As solar cells grown by molecular beam epitaxy

    SciTech Connect

    Melloch, M.R. ); Tobin, S.P.; Bajgar, C. ); Keshavarzi, A.; Stellwag, T.B.; Lush, G.B.; Lundstrom, M.S. ); Emery, K. )

    1990-07-02

    The quality of {ital pn} junction photodetectors made of Al{sub 0.2}Ga{sub 0.8}As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm{sup 2} Al{sub 0.22}Ga{sub 0.78}As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al{sub 0.2}Ga{sub 0.8}As solar cell fabricated from MBE material.

  20. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  1. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

    NASA Astrophysics Data System (ADS)

    Hutchins, T.; Nazari, M.; Eridisoorya, M.; Myers, T. M.; Holtz, M.

    2015-01-01

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  2. Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

    SciTech Connect

    Dabrowski, J. Lippert, G.; Schroeder, T.; Lupina, G.

    2014-11-10

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C{sub N}C{sub B} and O{sub N}C{sub N} pairs and B{sub 2}O{sub 3} inclusions in the virgin substrate.

  3. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  4. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

    PubMed Central

    2011-01-01

    We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

  5. Integration of functional complex oxide nanomaterials on silicon

    NASA Astrophysics Data System (ADS)

    Vila-Fungueiriño, Jose Manuel; Bachelet, Romain; Saint-Girons, Guillaume; Gendry, Michel; Gich, Marti; Gazquez, Jaume; Ferain, Etienne; Rivadulla, Francisco; Rodriguez-Carvajal, Juan; Mestres, Narcis; Carretero-Genevrier, Adrian

    2015-06-01

    The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  6. Wide-gap II-VI heterostructures

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kolodziejski, L. A.; Kobayashi, M.; Otsuka, N.; Nurmikko, A. V.

    1990-04-01

    Recent advances in the growth of II-VI/II-VI and II-VI/III-V heterostructures based on the widegap II-VI semiconductors CdTe and ZnTe are discussed. The potentially important pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb has been grown by MBE and characterized. Both microstructural and optical evaluation indicate a high degree of structural quality and the potential for future development of novel light-emitting device structures. Metastable zincblende MnTe, for which TEM and X-ray evaluation reveal the presence of only zincblende phases, has been grown by MBE. Single quantum well structures using zincblende MnTe for the barrier layers have been fabricated and found to show strong carrier confinement, further confirming the predicted zincblende MnTe bandgap at 3.2 eV.

  7. Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

    NASA Technical Reports Server (NTRS)

    Derry, P. L.; Chen, H. Z.; Morkoc, H.; Yariv, A.; Lau, K. Y.

    1988-01-01

    Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

  8. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Berezovskaya, T. N.; Nevedomskiy, V. N.

    2015-10-15

    It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

  9. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy.

    PubMed

    Baiutti, Federico; Christiani, Georg; Logvenov, Gennady

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  10. Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

    SciTech Connect

    Xu Zhongjie; Xie Maohai; Zhang Lixia; He Hongtao; Wang Jiannong

    2011-11-01

    Growths of GaN on Si(111) - (7 x 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n{sup -}-Si substrate shows rectifying characteristics.

  11. Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael E.; Elliott, S. Tom; Holland, Stephen E.; Nikzad, Shouleh

    2005-01-01

    A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

  12. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

    SciTech Connect

    Hutchins, T.; Nazari, M.; Eridisoorya, M.; Myers, T. M.; Holtz, M.

    2015-01-15

    A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range is then determined based on the Raman peak position with the substrate in situ the MBE chamber. The apparatus relies on conventional optics and Raman components. Shifting and broadening of the Raman spectrum are described based on the effects of thermal expansion and anharmonic decay. The choice of reference temperature is discussed. The method is qualified by examining the substrate temperature dependence, relative to that of a standard thermocouple, during a commonly used ramp procedure. Both temperature difference and time lag are obtained.

  13. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    SciTech Connect

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  14. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  15. n{sup +}-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

    SciTech Connect

    Lugani, L.; Malinverni, M.; Giraud, E.; Carlin, J.-F.; Grandjean, N.; Tirelli, S.; Marti, D.; Bolognesi, C. R.

    2014-11-17

    We report on the low-temperature growth of heavily Si-doped (>10{sup 20 }cm{sup −3}) n{sup +}-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 × 10{sup −4} Ω·cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n{sup +}-GaN/2 dimensional electron gas contact resistivity of 0.11 Ω·mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices.

  16. Automation, Control and Modeling of Compound Semiconductor Thin-Film Growth

    SciTech Connect

    Breiland, W.G.; Coltrin, M.E.; Drummond, T.J.; Horn, K.M.; Hou, H.Q.; Klem, J.F.; Tsao, J.Y.

    1999-02-01

    This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we have constructed ''virtual reactor'' models for growth processes, with the goal of greatly shortening the epitaxial growth process development cycle.

  17. Multibeam emitters as joint optical laser complex and ion-optical system for laser selection of atoms, molecules, isotopes, isomers, long-lived and short-lived radionuclides in different spheres from γ-laser and atomic energetics to medicine and gene engineering

    NASA Astrophysics Data System (ADS)

    Karyagin, Stanislav V.

    2001-03-01

    The SPTEN-(gamma) -laser's development leads to the essentially new principles for the effective converting of the nuclear radiation (neutrons, gamma, etc.) into the well controlling and focusing broad formatted atomic (ionic, molecular, etc.) beams which are fit for the creation of the active medium of the (gamma) -laser and for the other aims, e.g., for the acceleration by many orders of the selection of atoms, molecules, isotopes, isomers, radionuclides, for high precision methods in the spectroscopy-chromatography of the macromolecules, etc. The appropriate Multi Beam Emitter systems, MBE, are based on the dividing of the broad formatted beam of nuclei into a big amount approximately 105 - 109 of the collinear microbeams with use of the especial deeply engraved gratings together with ad hoc ion and laser optics. MBE will be realized in a non-(gamma) - laser sphere before the first direct (gamma) -lasing demonstration experiments.

  18. Real-time control of the molecular beam epitaxy of nitrides

    NASA Astrophysics Data System (ADS)

    Massies, J.; Grandjean, N.

    1999-05-01

    Due to the peculiarities of the growth process of GaN and related alloys on sapphire substrates, reflection high-energy electron diffraction (RHEED) is not sufficient to correctly monitor all the different steps of molecular beam epitaxy growth (MBE). It is shown that laser reflectivity, which is a very simple method, is highly complementary to RHEED. However, RHEED remains an unrivaled tool for the precise control of the growth. In particular, the observation of RHEED intensity oscillations can be used, as for classical semiconductors, to determine the growth rate with monolayer precision and also the composition of ternary alloys such as Al xGa 1- xN. The accuracy of such a RHEED based control of MBE growth of nitrides is exemplified by the optical properties of GaN/Al xGa 1- xN quantum well structures.

  19. Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

    PubMed Central

    2010-01-01

    The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies. PMID:21076695

  20. Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

    NASA Astrophysics Data System (ADS)

    Proessdorf, Andre; Grosse, Frank; Braun, Wolfgang; Katmis, Ferhat; Riechert, Henning; Romanyuk, Oleksandr

    2011-04-01

    The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE) environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120° domain structure and possible disorder.

  1. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Gao, Yongli . Dept. of Physics and Astronomy)

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  2. A method of producing high quality oxide and related films on surfaces

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

    1991-01-01

    Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

  3. A method of producing high quality oxide and related films on surfaces

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Gao, Yongli

    1991-12-31

    Aluminum oxide or aluminum nitride films were deposited on MBE grown GaAs(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid form the desired compound or a precursor than can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE-systems and on going research using the same apparatus suggests than photon or electron irradiation could also be used to promote the reactions needed to give the intended material.

  4. Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

    1991-01-01

    Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

  5. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  6. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

    SciTech Connect

    Shengurov, D. V.; Chalkov, V. Yu.; Denisov, S. A.; Shengurov, V. G.; Stepikhova, M. V.; Drozdov, M. N.; Krasilnik, Z. F.

    2013-03-15

    The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 Multiplication-Sign 10{sup -10} Torr. The oxygen and erbium concentrations in the Si layers grown at 450 Degree-Sign C is {approx}1 Multiplication-Sign 10{sup 19} and 10{sup 18} cm{sup -3}, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800 Degree-Sign C.

  7. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Boschker, Jos E.; Boniardi, Mattia; Redaelli, Andrea; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80-150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  8. Mechanical properties of individual InAs nanowires studied by tensile tests

    NASA Astrophysics Data System (ADS)

    Li, X.; Wei, X. L.; Xu, T. T.; Ning, Z. Y.; Shu, J. P.; Wang, X. Y.; Pan, D.; Zhao, J. H.; Yang, T.; Chen, Q.

    2014-03-01

    Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ˜10%. Their fracture strength distributes in a similar range of ˜2-5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16-78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34-79 GPa with an average value of 58 GPa for MBE NWs.

  9. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Baba, M.; Toh, K.; Toko, K.; Hara, K. O.; Usami, N.; Saito, N.; Yoshizawa, N.; Suemasu, T.

    2013-09-01

    BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.

  10. Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael E; Greer, Frank; Jacquot, Blake; Monacos, Steve; Jones, Todd J; Blacksberg, Jordana; Hamden, Erika; Schiminovich, David; Martin, Chris; Morrissey, Patrick

    2012-01-20

    We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed. PMID:22270664

  11. Photoluminescence of GaAs films grown by vacuum chemical epitaxy

    SciTech Connect

    Bernussi, A.A.; Barreto, C.L.; Carvalho, M.M.G.; Motisuke, P.

    1988-08-01

    GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750 /sup 0/C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

  12. High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2

    NASA Astrophysics Data System (ADS)

    Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane; Batzill, Matthias

    2016-05-01

    Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe2 monolayers on MoS2 substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic "wagon wheel" pattern with only ˜2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give the monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe2 and thus determine the band-alignment in the MoTe2/MoS2 interface.

  13. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1992-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

  14. Phototransistors Development and their Applications to Lidar

    NASA Technical Reports Server (NTRS)

    Abedin, M. N.; Refaat, Tamer F.; Ismail, Syed; Singh, Upendra N.

    2007-01-01

    Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

  15. New current injection 1.5-µm wavelength GaxAlyIn1 - x - yAs/InP double-heterostructure laser grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tsang, W. T.; Olsson, N. A.

    1983-06-01

    We have prepared and characterized for the first time a new current injection double-heterostructure (DH) laser with GaxAlyIn1-x-y As as the active layer and InP as the cladding layers operating at 1.5-μm wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al0.48In0.52 As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad-area Fabry-Perot diodes of 380×200 μm have a threshold current density of ˜3.2 kA/cm2 for active layer thickness of 0.25 μm. In the temperature range ˜15-50 °C, the threshold temperature dependence coefficient T0 is typically ˜40 K. Above ˜50 °C, T0 decreases to ˜25-35 K. The present laser also represents the first current injection DH laser emitting at 1.5 μm ever prepared by MBE. In the present experiment, As2 instead of As4 was also used for the first time in growing the GaxAlyIn1-x-y As layers by MBE in order to improve their quality. This becomes particularly important as the substrate growth temperatures employed are relatively low, ≲625 °C.

  16. New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy

    SciTech Connect

    Tsang, W.T.; Olsson, N.A.

    1983-06-01

    We have prepared and characterized for the first time a new current injection double-heterostructure (DH) laser with Ga/sub x/Al/sub y/In/sub 1-x/-y As as the active layer and InP as the cladding layers operating at 1.5-..mu..m wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al/sub 0.48/In/sub 0.52/ As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad-area Fabry--Perot diodes of 380 x 200 ..mu..m have a threshold current density of approx.3.2 kA/cm/sup 2/ for active layer thickness of 0.25 ..mu..m. In the temperature range approx.15--50 /sup 0/C, the threshold temperature dependence coefficient T/sub 0/ is typically approx.40 K. Above approx.50 /sup 0/C, T/sub 0/ decreases to approx.25--35 K. The present laser also represents the first current injection DH laser emitting at 1.5 ..mu..m ever prepared by MBE. In the present experiment, As/sub 2/ instead of As/sub 4/ was also used for the first time in growing the Ga/sub x/Al/sub y/In/sub 1-x/-y As layers by MBE in order to improve their quality. This becomes particularly important as the substrate growth temperatures employed are relatively low, < or approx. =625 /sup 0/C.

  17. Mn2Au: body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Liao, Zhi-Min; Sofin, R G Sumesh; Feng, Gen; Ma, Xiu-Mei; Shick, Alexander B; Mryasov, Oleg N; Shvets, Igor V

    2012-12-11

    Mn(2)Au, a layered bimetal, is successfully grown using molecular beam epitaxy (MBE). The experiments and theoretical calculations presented suggest that Mn(2)Au film is antiferromagnetic with a very low critical temperature. The antiferromagnetic nature is demonstrated by measuring the exchange-bias effect of Mn(2)Au/Fe bilayers. This study establishes a primary basis for further research of this new antiferromagnet in spin-electronic device applications. PMID:22996352

  18. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  19. Vacancy complexes in Sb-doped SnO{sub 2}

    SciTech Connect

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.

    2014-02-21

    MBE-grown Sb-doped epitaxial SnO{sub 2} thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy. Vacancies were found in varying amounts, the general trend points to a decrease in vacancy concentration as dopant concentration increases. The exact identity of the vacancy defects is not known, but results suggest complexes of Sn and O vacancies.

  20. Kinetic process of nitridation on the α-sapphire surface

    NASA Astrophysics Data System (ADS)

    Xingzhou, Tang; Shuping, Li; Junyong, Kang; Jiaqi, Chen

    2014-11-01

    We established a model to simulate the growth process of nitridation and clarified the inner mechanisms of nitridation and over-nitridation by combining the kinetic Monte Carlo and molecular dynamics methods. Supported by reflection high-energy electron diffraction results with growth in an MBE system, the tendency of nitridation on α-sapphire in different conditions was observed and analyzed. The best conditions for nitridation on the α-sapphire surface are found by our simulation.

  1. Understanding the Potential and Limitations of Dilute Nitride Alloys for Solar Cells

    SciTech Connect

    Kurtz, S.; Ptak, A.; Johnston, S.; Kramer, C.; Young, M.; Friedman, D.; Geisz, J.; McMahon, W.; Kibbler, A.; Olson, J.; Crandall, R.; Branz, H.

    2005-11-01

    Dilute nitride alloys provide a powerful tool for engineering the band gap and lattice constant of III-V alloys. However, nitrogen degrades the performance of GaAs solar cells. This project seeks to understand and demonstrate the limits of performance of GaInNAs alloys by (a) correlating deep-level transient spectroscopy (DLTS) data with device performance and (b) using molecular beam epitaxy (MBE) to reduce background impurity concentrations.

  2. Advanced silicon on insulator technology

    NASA Technical Reports Server (NTRS)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  3. Growing Gallium Arsenide On Silicon

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, Gouri

    1989-01-01

    Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

  4. 2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors

    NASA Technical Reports Server (NTRS)

    Sulima, O. V.; Swaminathan, K.; Refaat, T. F.; Faleev, N. N.; Semenov, A. N.; Solov'ev, V. A.; Ivanov, S. V.; Abedin, M. N.; Singh, U. N.; Prather, D.

    2006-01-01

    We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C).

  5. Principles of models based engineering

    SciTech Connect

    Dolin, R.M.; Hefele, J.

    1996-11-01

    This report describes a Models Based Engineering (MBE) philosophy and implementation strategy that has been developed at Los Alamos National Laboratory`s Center for Advanced Engineering Technology. A major theme in this discussion is that models based engineering is an information management technology enabling the development of information driven engineering. Unlike other information management technologies, models based engineering encompasses the breadth of engineering information, from design intent through product definition to consumer application.

  6. Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

    SciTech Connect

    Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W.

    2014-05-15

    Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

  7. Observation of Room Temperature Ferromagnetism in InN Nanostructures.

    PubMed

    Roul, Basanta; Kumar, Mahesh; Bhat, Thirumaleshwara N; Rajpalke, Mohana K; Krupanidhi, S B; Kumar, Nitesh; Sundaresan, A

    2015-06-01

    The room temperature ferromagnetic behavior of InN nanostructures grown by molecular beam epitaxy (MBE) is explored by means of magnetization measurements. The saturation magnetization and remanent magnetization are found to be strongly dependent on the size of the nanostructures. This suggests that the ferromagnetism is essentially confined to the surface of the nanostructures due to the possible defects. Raman spectroscopy shows the existence of indium vacancies which could be the source of ferromagnetic ordering in InN nanostructures. PMID:26369060

  8. Apparatus for producing ultraclean bicrystals by the molecular beam epitaxy growth and ultrahigh vacuum bonding of thin films

    SciTech Connect

    Amiri-Hezaveh, A.; Balluffi, R.W. )

    1993-10-01

    An apparatus has been designed and constructed which is capable of growing single-crystal thin films and then bonding them together face-to-face to produce bicrystals under ultrahigh vacuum (UHV) conditions. The films are grown in molecular beam epitaxy (MBE) system capable of growing well-characterized single-crystal thin films of metals, semiconductors, and high [ital T][sub [ital c

  9. Evolving surface cusps during strained-layer epitaxy

    SciTech Connect

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1993-04-01

    We have combined Z-contrast imaging and Ge marker layer experiments to study the evolving surface morphology of Si{sub x}Ge{sub 1-x} alloys grown by molecular beam epitaxy (MBE). Surface cusps are seen to arise as the intersection lines between coherent islands. The potential implications of stress concentrations associated with cusps are considered with a view to strain relaxation in the film via dislocation nucleation.

  10. Astronomically-induced Mid-Brunhes Transition in the Southern and Deep Oceans

    NASA Astrophysics Data System (ADS)

    Yin, Qiuzhen

    2013-04-01

    The interglacials after 430 ka (ka: 1000 years) ago were characterized by warmer climates and higher atmospheric CO2 concentrations than the interglacials before, but the cause of this climatic transition (the so-called Mid-Brunhes Event, MBE) is unknown. Based on model simulations, my results show that, in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic Bottom Water formation and Southern Ocean ventilation. My results also show that strong Westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward visible systematic difference in the astronomical parameters between the interglacials before and after 430 ka ago. Rather than being a real "event", the apparent MBE (i.e. the difference in the interglacial intensity before and after 430 ka BP) appears in my results to come from the complex response of the climate system to the astronomical and insolation forcings prevailing before and after 430 ka BP. This does not mean that nothing could have happened between MIS-13 and MIS-11 which might have amplified such difference. Given the important roles of the Southern and Deep Oceans on the carbon cycle, these findings are a first step towards understanding the magnitude change of the interglacial CO2 concentration around 430 ka. Reference: Yin Q.Z., 2013. Insolation-induced Mid-Brunhes Transition in the Southern and Deep Oceans. Nature, DOI 10.1038/nature11790. Acknowledgement: This work is supported by the European Research Council

  11. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  12. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  13. GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

    NASA Technical Reports Server (NTRS)

    Eisele, H.; Haddad, G. I.

    1992-01-01

    Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.

  14. Programmatic Impact of SDRAM SEFI

    NASA Technical Reports Server (NTRS)

    Guertin, Steven M.; Allen, Gregory R.; Sheldon, Douglas J.

    2012-01-01

    The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

  15. Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy

    NASA Astrophysics Data System (ADS)

    Liu, H. J.; Jiao, L.; Xie, L.; Yang, F.; Chen, J. L.; Ho, W. K.; Gao, C. L.; Jia, J. F.; Cui, X. D.; Xie, M. H.

    2015-09-01

    Interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy (MBE). However, growths of monolayer (ML) and bilayer (BL) WSe2—an important member of the TMD family—by the MBE method remain uncharted, probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the DB defects is present. The STS measurements of ML and BL WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from ML to BL, but also a band-bending effect across the boundary (step) between ML and BL domains. This band-bending appears to be dictated by the edge states at steps of the BL islands. Finally, comparison is made between the STS-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in ML and BL WSe2 (and MoSe2) are thus estimated.

  16. Adaptive sparse grid expansions of the vibrational Hamiltonian

    NASA Astrophysics Data System (ADS)

    Strobusch, D.; Scheurer, Ch.

    2014-02-01

    The vibrational Hamiltonian involves two high dimensional operators, the kinetic energy operator (KEO), and the potential energy surface (PES). Both must be approximated for systems involving more than a few atoms. Adaptive approximation schemes are not only superior to truncated Taylor or many-body expansions (MBE), they also allow for error estimates, and thus operators of predefined precision. To this end, modified sparse grids (SG) are developed that can be combined with adaptive MBEs. This MBE/SG hybrid approach yields a unified, fully adaptive representation of the KEO and the PES. Refinement criteria, based on the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) methods, are presented. The combination of the adaptive MBE/SG approach and the VSCF plus VCI methods yields a black box like procedure to compute accurate vibrational spectra. This is demonstrated on a test set of molecules, comprising water, formaldehyde, methanimine, and ethylene. The test set is first employed to prove convergence for semi-empirical PM3-PESs and subsequently to compute accurate vibrational spectra from CCSD(T)-PESs that agree well with experimental values.

  17. Comparison of electrical properties and deep traps in p-Al{sub x}Ga{sub 1-x}N grown by molecular beam epitaxy and metal organic chemical vapor deposition

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  18. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    SciTech Connect

    Xi, Xiaoxing

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  19. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

    NASA Astrophysics Data System (ADS)

    Steele, J. A.; Horvat, J.; Lewis, R. A.; Henini, M.; Fan, D.; Mazur, Yu. I.; Dorogan, V. G.; Grant, P. C.; Yu, S.-Q.; Salamo, G. J.

    2015-12-01

    In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation ``hot spot'' at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure.

  20. Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

    NASA Technical Reports Server (NTRS)

    Leopold, Daniel J.

    2002-01-01

    The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

  1. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE PAGESBeta

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  2. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. Adaptive sparse grid expansions of the vibrational Hamiltonian

    SciTech Connect

    Strobusch, D.; Scheurer, Ch.

    2014-02-21

    The vibrational Hamiltonian involves two high dimensional operators, the kinetic energy operator (KEO), and the potential energy surface (PES). Both must be approximated for systems involving more than a few atoms. Adaptive approximation schemes are not only superior to truncated Taylor or many-body expansions (MBE), they also allow for error estimates, and thus operators of predefined precision. To this end, modified sparse grids (SG) are developed that can be combined with adaptive MBEs. This MBE/SG hybrid approach yields a unified, fully adaptive representation of the KEO and the PES. Refinement criteria, based on the vibrational self-consistent field (VSCF) and vibrational configuration interaction (VCI) methods, are presented. The combination of the adaptive MBE/SG approach and the VSCF plus VCI methods yields a black box like procedure to compute accurate vibrational spectra. This is demonstrated on a test set of molecules, comprising water, formaldehyde, methanimine, and ethylene. The test set is first employed to prove convergence for semi-empirical PM3-PESs and subsequently to compute accurate vibrational spectra from CCSD(T)-PESs that agree well with experimental values.

  5. Insight into the microstructural characterization of ferritic steels using micromagnetic parameters

    SciTech Connect

    Moorthy, V.; Vaidyanathan, S.; Raj, B.; Jayakumar, T.; Kashyap, B.P.

    2000-04-01

    The influence of tempering-induced microstructural changes on the micromagnetic parameters such as magnetic Barkhausen emission (MBE), coercive force (H{sub c}), residual induction (B{sub r}), and maximum induction (B{sub max}) has been studied in 0.2 pct carbon steel, 2.25Cr-1Mo steel, and 9Cr-1Mo steel. It is observed that, after short tempering, the micromagnetic parameters show more or less linear correlation with hardness, which is attributed to the reduction in dislocation density, but long-term tempering produces nonlinear behavior. The variation in each of these parameters with tempering time has been explained based on the changes in the size and distribution of ferrite laths/grains and precipitates. It has been shown that the individual variation in the microstructural features such as size and distribution of laths/grains and precipitates during tempering can be clearly identified by the MBE parameters, which is not possible from the hysteresis loop parameters (H{sub c} and B{sub r}). It is also shown that the MBE parameters cannot only be used to identify different stages of tempering but also to quantify the average size of laths/grains and second-phase precipitates.

  6. Heavy ion fusion accelerator research (HIFAR) year-end report, April 1, 1987-September 30, 1987

    SciTech Connect

    Not Available

    1987-12-01

    The basic objective of the Heavy Ion Fusion Accelerator Research (HIFAR) program is to access the suitabilty of heavy ion accelerators as iginiters for Inertial Confinement Fusion (ICF). A specific accerelator techonolgy, the induction linac, has been studied at the Lawerence Berkeley Laboratory and has reached the point at which its viability for ICF applications can be assessed over the next few years. The HIFAR program addresses the generation of high-power, high-brightness beams of heavy ions, the understanding of the scaling laws in this novel physics regime, and the vadidation of new accelerator strategies, to cut costs. The papers in this report that address these goals are: MBE-4 mechanical progress, alignment of MBE-4, a compact energy analyzer for MBE-4, Cs/sup +/ injector modeling with the EGUN code, an improved emittance scanning system for HIFAR, 2-MV injector, carbon arc source development, beam combining in ILSE, emittance growth due to transverse beam combining in ILSE - particle simulation results, achromatic beam combiner for ILSE, additional elements for beam merging, quadrupole magnet design for ILSE, and waveforms and longitudinal beam-parameters for ILSE.

  7. The Universal Dynamics of Tumor Growth

    PubMed Central

    Brú, Antonio; Albertos, Sonia; Luis Subiza, José; García-Asenjo, José López; Brú, Isabel

    2003-01-01

    Scaling techniques were used to analyze the fractal nature of colonies of 15 cell lines growing in vitro as well as of 16 types of tumor developing in vivo. All cell colonies were found to exhibit exactly the same growth dynamics—which correspond to the molecular beam epitaxy (MBE) universality class. MBE dynamics are characterized by 1), a linear growth rate, 2), the constraint of cell proliferation to the colony/tumor border, and 3), surface diffusion of cells at the growing edge. These characteristics were experimentally verified in the studied colonies. That these should show MBE dynamics is in strong contrast with the currently established concept of tumor growth: the kinetics of this type of proliferation rules out exponential or Gompertzian growth. Rather, a clear linear growth regime is followed. The importance of new cell movements—cell diffusion at the tumor border—lies in the fact that tumor growth must be conceived as a competition for space between the tumor and the host, and not for nutrients or other factors. Strong experimental evidence is presented for 16 types of tumor, the growth of which cell surface diffusion may be the main mechanism responsible in vivo. These results explain most of the clinical and biological features of colonies and tumors, offer new theoretical frameworks, and challenge the wisdom of some current clinical strategies. PMID:14581197

  8. High efficiency cadmium and zinc telluride-based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Rohatgi, A.; Summers, C. J.; Erbil, A.; Sudharsanan, R.; Ringel, S.

    1990-10-01

    Polycrystalline Cd(1-x)Zn(x)Te and Cd(1-x)Mn(x)Te films with a band gap of 1.7 eV were successfully grown on glass/SnO2/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd(1-x)Zn(x)Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd(1-x)Mn(x)Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd(1-x)Mn(x)Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5 percent. MBE-grown CdTe cells also produced 8 to 9 percent efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl2 + ZnCl2 chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  9. Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions

    NASA Astrophysics Data System (ADS)

    Arias, Jose; Zandian, M.; Pasko, J. G.; Shin, S. H.; Bubulac, L. O.; DeWames, R. E.; Tennant, W. E.

    1991-02-01

    In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm-3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017-1018 cm-3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.

  10. Minority business bidding for local government contracts: the complexity of availability.

    PubMed

    Bangs, Ralph L; Murrell, Audrey; Constance-Huggins, Monique

    2007-01-01

    While minority-business enterprises (MBEs) have gained some access to local government contracts during the last three decades, these firms continue to receive a small share of local government contract spending relative to the number of available firms. Researchers have suggested two general explanations for the low representation of MBEs in contract awards: (1) lack of qualifications and capacity among MBEs, and (2) public and private discrimination against MBEs in contracting processes. This study on prime contract opportunities in a Northern central city and county with a large minority population finds that low bid rates greatly contribute to the low MBE shares of prime contracts and that bidding is reduced by both local government processes and characteristics of the firms. Some implications of these findings are that local governments need to: (1) monitor MBE shares of prime contract bids by size of contract and use share of bids as one measure of program and organizational effectiveness; (2) identify MBEs that are qualified for prime contracts and encourage and help interested firms to submit competitive bids; and (3) ensure that local government policies and practices do not diminish access to information about prime contract opportunities for qualified and interested minority firms. Another implication is that bidders lists should not be a primary basis for determining MBE availability, since many qualified and interested MBEs do not bid because of perceived barriers in local government. PMID:19306596

  11. Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

    SciTech Connect

    Olson, J.M.; McMahon, W.E.

    1998-09-01

    While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.

  12. Characterization of aging-induced microstructural changes in M250 maraging steel using magnetic parameters

    NASA Astrophysics Data System (ADS)

    Rajkumar, K. V.; Vaidyanathan, S.; Kumar, Anish; Jayakumar, T.; Raj, Baldev; Ray, K. K.

    2007-05-01

    The best combinations of mechanical properties (yield stress and fracture toughness) of M250 maraging steel is obtained through short-term thermal aging (3-10 h) at 755 K. This is attributed to the microstructure containing precipitation of intermetallic phases in austenite-free low-carbon martensite matrix. Over-aged microstructure, containing reverted austenite degrades the mechanical properties drastically. Hence, it necessitates identification of a suitable non-destructive evaluation (NDE) technique for detecting any reverted austenite unambiguously during aging. The influence of aging on microstructure, room temperature hardness and non-destructive magnetic parameters such as coercivity ( Hc), saturation magnetization ( Ms) and magnetic Barkhausen emission (MBE) RMS peak voltage is studied in order to derive correlations between these parameters in aged M250 maraging steel. Hardness was found to increase with precipitation of intermetallics during initial aging and decrease at longer durations due to austenite reversion. Among the different magnetic parameters studied, MBE RMS peak voltage was found to be very sensitive to austenite reversion (non-magnetic phase) as they decreased drastically up on initiation of austenite reversion. Hence, this parameter can be effectively utilized to detect and quantify the reverted austenite in maraging steel specimen. The present study clearly indicates that the combination of MBE RMS peak voltage and hardness can be used for unambiguous characterization of microstructural features of technological and practical importance (3-10 h of aging duration at 755 K) in M250 grade maraging steel.

  13. Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature

    NASA Astrophysics Data System (ADS)

    Toh, Katsuaki; Hara, Kosuke O.; Usami, Noritaka; Saito, Noriyuki; Yoshizawa, Noriko; Toko, Kaoru; Suemasu, Takashi

    2012-09-01

    We attempted to grow orthorhombic BaSi2 epitaxial films having preferential in-plane crystallographic orientation on both exact and vicinal Si(001) substrates with a miscut angle of 2° toward Si[bar 110] by reactive deposition epitaxy (RDE) and subsequent molecular beam epitaxy (MBE). On the vicinal Si(001) substrate, the initial BaSi2 nuclei formed by RDE tended to grow unidirectionally with the [010] direction parallel to Si[110] when the annealing temperature of the Si substrate before the growth was increased from 830 to 1000 °C. Transmission electron microscopy showed that the grain size of the BaSi2 films grown by MBE increased up to approximately 9 µm on the vicinal Si(001) substrate when the substrate annealing temperature was 1000 °C. This is the largest grain size ever obtained for BaSi2. Even in the case of the exact Si(001) substrate, the MBE-grown BaSi2 grains preferentially grew with the [010] direction along Si[110] when the annealing temperature was 1000 °C.

  14. Solar Activity Studies using Microwave Imaging Observations

    NASA Technical Reports Server (NTRS)

    Gopalswamy, N.

    2016-01-01

    We report on the status of solar cycle 24 based on polar prominence eruptions (PEs) and microwave brightness enhancement (MBE) information obtained by the Nobeyama radioheliograph. The north polar region of the Sun had near-zero field strength for more than three years (2012-2015) and ended only in September 2015 as indicated by the presence of polar PEs and the lack of MBE. The zero-polar-field condition in the south started only around 2013, but it ended by June 2014. Thus the asymmetry in the times of polarity reversal switched between cycle 23 and 24. The polar MBE is a good proxy for the polar magnetic field strength as indicated by the high degree of correlation between the two. The cross-correlation between the high- and low-latitude MBEs is significant for a lag of approximately 5.5 to 7.3 years, suggesting that the polar field of one cycle indicates the sunspot number of the next cycle in agreement with the Babcock-Leighton mechanism of solar cycles. The extended period of near-zero field in the north-polar region should result in a weak and delayed sunspot activity in the northern hemisphere in cycle 25.

  15. High efficiency cadmium and zinc telluride-based thin film solar cells

    SciTech Connect

    Rohatgi, A.; Summers, C.J.; Erbil, A.; Sudharsanan, R.; Ringel, S. . School of Electrical Engineering)

    1990-10-01

    Polycrystalline Cd{sub 1-x}Zn{sub x}Te and Cd{sub 1-x}Mn{sub x}Te films with a band gap of 1.7 eV were successfully grown on glass/SnO{sub 2}/CdS substrates by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Polycrystalline Cd{sub 1-x}Zn{sub x}Te films grown by MBE resulted in uniform composition and sharp interfaces. However, polycrystalline Cd{sub 1-x}Mn{sub x}Te films grown by MOCVD showed nonuniform compositions and evidence of manganese accumulation at the Cd{sub 1-x}Mn{sub x}Te/CdS interface. We found that manganese interdiffuses and replaces cadmium in the CdS film. By improving the CdTe/CdS interface and, thus, reducing the collection function effects, the efficiency of the MOCVD CdTe cell can be improved to about 13.5%. MBE-grown CdTe cells also produced 8%--9% efficiencies. The standard CdTe process was not optimum for ternary films and resulted in a decrease in the band gap. Recent results indicate that CdCl{sub 2} + ZnCl{sub 2} chemical treatment may prevent the band-gap reduction, and that chromate etch (rather than bromine etch) may provide the solution to contact resistance in the ternary cells.

  16. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  17. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography. Comparison Of Experiments And Simulation

    SciTech Connect

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  18. Final Report: A Novel Tandem Homojunction Solar Cell, July 1, 1995 - June 30, 1999

    SciTech Connect

    Parkinson, Bruce

    1999-06-30

    The eventual target material, ZnSnP{sub 2}, was difficult to grow with MBE because of the high phosphorus vapor pressure. We decided to begin by growing a similar material, ZnSnAs{sub 2}, that also has a band gap dependent on the growth temperature that is related to the metal sub lattice site disorder. We were successful at growing and characterizing this material with MBE. Single crystals of a variety of the chalcopyrite materials were also prepared and characterized. The single crystals were used for optical and electronic property comparisons with the MBE and MOMBE grown thin films. Films of ZnSnP{sub 2} were eventually grown using organophosphorus precursors in an MOMBE growth process. This was also described in a published paper. We also completed the most thorough solid state NMR characterization of 11-IV-V{sub 2} chalcopyrite semiconductors yet done. This paper will soon be submitted to ''Chemistry of Materials''. Although we did not succeed in preparing a photovoltaic device we did pioneer new growth methods for preparing epitaxial layers of these materials and were able to obtain acceptable electronic properties from the thin film materials. Five high quality publications and two PhD thesis were also a direct result of this research project.

  19. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  20. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices. PMID:26308470

  1. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures.

    PubMed

    Steele, J A; Horvat, J; Lewis, R A; Henini, M; Fan, D; Mazur, Yu I; Dorogan, V G; Grant, P C; Yu, S-Q; Salamo, G J

    2015-12-28

    In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor-liquid-solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation "hot spot" at the edge of the liquid-solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure. PMID:26584058

  2. Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

    NASA Astrophysics Data System (ADS)

    Schläpfer, F.; Dietsche, W.; Reichl, C.; Faelt, S.; Wegscheider, W.

    2016-05-01

    The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a high initial Ga purity, allowing to reach mobilities of 15 million (single interface) or 28 million cm2/V s (doped quantum wells) in our MBE systems. We discuss possible origins of the inconsistent Ga quality. Furthermore, we compare samples grown in different MBE systems over a period of several years and find that mobility and PL are correlated if similar structures and growth procedures are used.

  3. A spatially consistent seamless predictions of continental-scale hydrologic fluxes and states

    NASA Astrophysics Data System (ADS)

    Kumar, Rohini; Mai, Juliane; Rakovec, Oldrich; Zink, Matthias; Cuntz, Matthias; Thober, Stephan; Attinger, Sabine; Schroen, Martin; Schaefer, David; Samaniego, Luis

    2016-04-01

    One of the major challenges in the contemporary hydrology is to establish a continental-scale hydrologic model that can provide spatially consistent, seamless prediction of hydrologic fluxes and states to better characterise extreme events like floods and droughts. This requires, among other things, 1) a robust parameterization technique that allows the model to seamlessly operate across a range of spatial resolutions and 2) an efficient parameter estimation technique to derive a representative set of spatially consistent model parameters that avoid inconsistencies in simulated hydrologic fields (e.g., soil moisture). In this study, we demostrate the applicability of a mesoscale hydrologic model parameterized using a multiscale regionalization technique to derive daily gridded fields of hydrologic fluxes/states over the Pan-EU domain since 1950. A multi-basin parameter estimation (MBE) strategy that utilizes observed streamflows from a set of hydrologically diverse basins is introduced to infer a representative set of regional calibration parameters which is applicable over the entire domain. We tested three sampling schemes to select a set of calibration basins incremented sequentially from 2 to 20 basins, based on the 1) random selection procedure, 2) gradient along the hydro-climatic regimes, and 3) diversity in hydro-climatic and basin physiographical properties (e.g., terrain, soil, land cover properties). Results of the MBE approach are contrasted against the benchmark at-site calibration strategy across 400 EU basins varying from approximately 100 to 500,000 km2. At-site calibrated parameters performed best for site-specific streamflow predictions, but their transferability to other sites resulted in poor performance. Moreover, the at-site calibration strategy generated a patchy, spatially inconsistent distribution of parameter fields that further induced large discontinuities in simulated hydrologic fields of soil moisture among other sates/fluxes. These

  4. Estimation of global solar radiation using an artificial neural network based on an interpolation technique in southeast China

    NASA Astrophysics Data System (ADS)

    Zou, Ling; Wang, Lunche; Lin, Aiwen; Zhu, Hongji; Peng, Yuling; Zhao, Zhenzhen

    2016-08-01

    Solar radiation plays important roles in energy application, vegetation growth and climate change. Empirical relations and machine-learning methods have been widely used to estimate global solar radiation (GSR) in recent years. An artificial neural network (ANN) based on spatial interpolation is developed to estimate GSR in southeast China. The improved Bristow-Campbell (IBC) model and the improved Ångström-Prescott (IA-P) model are compared with the ANN model to explore the best model in solar radiation modeling. Daily meteorological parameters, such as sunshine duration hours, mean temperature, maximum temperature, minimum temperature, relative humidity, precipitation, air pressure, water vapor pressure, and wind speed, along with station-measured GSR and a daily surface GSR dataset over China obtained from the Data Assimilation and Modeling Center for Tibetan Multi-spheres (DAM), are used to predict GSR and to validate the models in this work. The ANN model with the network of 9-17-1 provides better accuracy than the two improved empirical models in GSR estimation. The root-mean-square error (RMSE), mean bias error (MBE), and determination coefficient (R2) are 2.65 MJ m-2, -0.94 MJ m-2, and 0.68 in the IA-P model; 2.19 MJ m-2, 1.11 MJ m-2, and 0.83 in the IBC model; 1.34 MJ m-2, -0.11 MJ m-2, and 0.91 in the ANN model, respectively. The regional monthly mean GSR in the measured dataset, DAM dataset, and ANN model is analyzed. The RMSE (RMSE %) is 1.07 MJ m-2 (8.91%) and the MBE (MBE %) is -0.62 MJ m-2 (-5.21%) between the measured and ANN-estimated GSR. The statistical errors of RMSE (RMSE %) are 0.91 MJ m-2 (7.28%) and those of MBE (MBE %) are -0.15 MJ m-2 (-1.20%) between DAM and ANN-modeled GSR. The correlation coefficients and R2 are larger than 0.95. The regional mean GSR is 12.58 MJ m-2. The lowest GSR is observed in the northwest area, and it increases from northwest to southeast. The annual mean GSR decreases by 0.02 MJ m-2 decade-1 over the entire

  5. Microstructures of aluminum gallium nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Wise, Adam

    Stress relief mechanisms and microstructures of AlxGa 1-xN thin films were investigated by growing samples by MBE and MOCVD. For investigation of stress relief mechanisms, a series of eight GaN samples were grown using MOCVD with AlxGa1-xN interlayers ranging from xAl=0.14 to xAl=1. Each successive interlayer in a given sample was increased in thickness and followed by a GaN probe-layer. A multi-beam optical stress sensor (MOSS) was used to monitor the stress in the sample during the growth process and determine the onset of stress relaxation. The thicknesses determined for stress relief onset in the interlayers were compared with calculations of Griffith's Criterion for hexagonal thin films and found to closely follow the predicted thicknesses of surface crack formation. For investigation of microstructures in AlxGa1-xN thin films, several sets of samples were grown by MOCVD, with varying pressure, temperature, and composition, and by MBE with varying temperature. The samples were examined by transmission electron microscopy, including [101¯0] selected area electron diffraction (SAED) patterns and weak beam dark field images taken with g=(0002) and g=(1¯21¯0). The MOCVD samples with composition variation were examined with [112¯0] SAED patterns, and the MBE-grown samples were examined using z-contrast imaging. All the MOCVD samples showed signs of ordering, while none of the MBE-grown samples did. In addition, the ordering was shown to be forming as thin plates of ordered material on the (0001) planes, anisotropic within the plane. Some MBE-grown samples were shown to have strong composition modulations arranged in bands arranged parallel to the surface of the sample, due to a balance between strain energy in the samples and the interfacial energy occurring between regions of high and low xAl. The samples grown by MOCVD were shown to have signs of phase separation in addition to the ordering observed. These samples show enhanced ordering in the system when

  6. Film breakdown and nano-porous Mg(OH)2 formation from corrosion of magnesium alloys in salt solutions

    SciTech Connect

    Brady, M. P.; Rother, G.; L. M. Anovitz; Littrell, K. C.; Unocic, K. A.; Elsentriecy, H. H.; Song, G. -L.; Thomson, J. K.; Gallego, N. C.; Davis, B.

    2015-01-21

    In this paper, small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron 717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as-received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but with no preferential size features. The films formed in 5 wt% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Finally, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.

  7. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe16N2 thin films

    SciTech Connect

    Yang, Meiyin; Allard, Lawrence F.; Ji, Nian; Zhang, Xiaowei; Yu, Guang-Hua; Wang, Jian -Ping

    2013-12-12

    Small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron®717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt.% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt.% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external) scattering, but with no preferential size features. The films formed in 5 wt.% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Here, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.

  8. Film breakdown and nano-porous Mg(OH)2 formation from corrosion of magnesium alloys in salt solutions

    DOE PAGESBeta

    Brady, M. P.; Rother, G.; L. M. Anovitz; Littrell, K. C.; Unocic, K. A.; Elsentriecy, H. H.; Song, G. -L.; Thomson, J. K.; Gallego, N. C.; Davis, B.

    2015-01-21

    In this paper, small angle neutron scattering (SANS) and scanning transmission electron microscopy (STEM) were used to study film formation by magnesium alloys AZ31B (Mg-3Al-1Zn base) and ZE10A (Elektron 717, E717: Mg-1Zn + Nd, Zr) in H2O and D2O with and without 1 or 5 wt% NaCl. No SANS scattering changes were observed after 24 h D2O or H2O exposures compared with as-received (unreacted) alloy, consistent with relatively dense MgO-base film formation. However, exposure to 5 wt% NaCl resulted in accelerated corrosion, with resultant SANS scattering changes detected. The SANS data indicated both particle and rough surface (internal and external)more » scattering, but with no preferential size features. The films formed in 5 wt% NaCl consisted of a thin, inner MgO-base layer, and a nano-porous and filamentous Mg(OH)2 outer region tens of microns thick. Chlorine was detected extending to the inner MgO-base film region, with segregation of select alloying elements also observed in the inner MgO, but not the outer Mg(OH)2. Modeling of the SANS data suggested that the outer Mg(OH)2 films had very high surface areas, consistent with loss of film protectiveness. Finally, implications for the NaCl corrosion mechanism, and the potential utility of SANS for Mg corrosion, are discussed.« less

  9. International Space Station (ISS) Gas Logistics Planning in the Post Shuttle Era

    NASA Technical Reports Server (NTRS)

    Leonard, Daniel J.; Cook, Anthony J.; Lehman, Daniel A.

    2011-01-01

    Over its life the International Space Station (ISS) has received gas (nitrogen, oxygen, and air) from various sources. Nitrogen and oxygen are used in the cabin to maintain total pressure and oxygen partial pressures within the cabin. Plumbed nitrogen is also required to support on-board experiments and medical equipment. Additionally, plumbed oxygen is required to support medical equipment as well as emergency masks and most importantly EVA support. Gas are supplied to ISS with various methods and vehicles. Vehicles like the Progress and ATV deliver nitrogen (both as a pure gas and as air) and oxygen via direct releases into the cabin. An additional source of nitrogen and oxygen is via tanks on the ISS Airlock. The Airlock nitrogen and oxygen tanks can deliver to various users via pressurized systems that run throughout the ISS except for the Russian segment. Metabolic oxygen is mainly supplied via cabin release from the Elektron and Oxygen Generator Assembly (OGA), which are water electrolyzers. As a backup system, oxygen candles (Solid Fuel Oxygen Generators-SFOGs) supply oxygen to the cabin as well. In the past, a major source of nitrogen and oxygen has come from the Shuttle via both direct delivery to the cabin as well as to recharge the ISS Airlock tanks. To replace the Shuttle capability to recharge the ISS Airlock tanks, a new system was developed called Nitrogen/Oxygen Recharge System (NORS). NIORS consists of high pressure (7000 psi) tanks which recharge the ISS Airlock tanks via a blowdown fill for both nitrogen and oxygen. NORS tanks can be brought up on most logistics vehicles such as the HTV, COTS, and ATV. A proper balance must be maintained to insure sufficient gas resources are available on-orbit so that all users have the required gases via the proper delivery method (cabin and/or plumbed).

  10. Effect of the Graded-Gap Layer Composition on the Formation of n + -n - -p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1- x Te Layers

    NASA Astrophysics Data System (ADS)

    Talipov, N. Kh.; Voitsekhovskii, А. V.; Grigor'ev, D. V.

    2014-07-01

    Processes of formation of n + -n--p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1-xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It is shown that the surface composition (xs) of HEL CMT MBE significantly affects both the electrical parameters of the implanted layer and the spatial distribution of radiation defects of donor type. For HEL CMT MBE with the small surface composition xs = 0.22-0.33, it is found that the layer electron concentration (Ns) is decreased after saturation with accumulation of radiation defects, as the dose of B+ ions is increased in the range of D = 1ṡ1011-3ṡ1015 сm-2. An increase of the surface composition up to xs = 0.49-0.56 results in a significant decrease in Ns and a disappearance of the saturation of concentration in the whole dose range. The value of Ns monotonically increases with the energy (E) of boron ions and composition xs. It is found that for B+-ion energies E = 20-100 keV, the depth of the surface n + -layer increases with increasing energy and exceeds the total projected path of boron ions. However, in the energy range E = 100-150 keV, the depth of n+-layer stops increasing with the increase of the surface composition. The depth (dn) of a lightly doped n--layer monotonically decreases with increasing energy of boron ions in the entire range of E = 20-150 keV. With increasing dose (D) of B+ ions in the interval D = 1ṡ1014-1ṡ1015сm-2, deep n--layers with dn = 4-5 μm are formed only in the HEL CMT MBE with xs = 0.22-0.33. For the samples with xs = 0.49-0.56, the depth changes in the interval dn = 1.5-2.5 μm. At D ≤ 3ṡ1013сm-2, n + -n--p-structure is not formed for all surface compositions, if implantation is performed at room temperature. However, implantation at T = 130°C leads to the formation of a deep n--layer. Planar photodiodes with the n-p-junction area of A = 35×35 μm2 made on the basis of

  11. Multidisciplinary model-based-engineering for laser weapon systems: recent progress

    NASA Astrophysics Data System (ADS)

    Coy, Steve; Panthaki, Malcolm

    2013-09-01

    We are working to develop a comprehensive, integrated software framework and toolset to support model-based engineering (MBE) of laser weapons systems. MBE has been identified by the Office of the Director, Defense Science and Engineering as one of four potentially "game-changing" technologies that could bring about revolutionary advances across the entire DoD research and development and procurement cycle. To be effective, however, MBE requires robust underlying modeling and simulation technologies capable of modeling all the pertinent systems, subsystems, components, effects, and interactions at any level of fidelity that may be required in order to support crucial design decisions at any point in the system development lifecycle. Very often the greatest technical challenges are posed by systems involving interactions that cut across two or more distinct scientific or engineering domains; even in cases where there are excellent tools available for modeling each individual domain, generally none of these domain-specific tools can be used to model the cross-domain interactions. In the case of laser weapons systems R&D these tools need to be able to support modeling of systems involving combined interactions among structures, thermal, and optical effects, including both ray optics and wave optics, controls, atmospheric effects, target interaction, computational fluid dynamics, and spatiotemporal interactions between lasing light and the laser gain medium. To address this problem we are working to extend Comet™, to add the addition modeling and simulation capabilities required for this particular application area. In this paper we will describe our progress to date.

  12. Misconduct, Marginality and Editorial Practices in Management, Business and Economics Journals

    PubMed Central

    2016-01-01

    Objectives The paper presents data on the two problems of misconduct and marginality in management, business and economics (MBE) journals and their practices to combat these problems. Design Data was collected in three phases. First, all publicly retracted papers in MBE journals were identified through keywords searches in 7 major databases (n = 1329 journals). Second, a focused survey was distributed to editors involved in such retractions (n = 64; response rate = 28%). Finally, a survey was administered to all active journals in the seven databases to collect data on editors’ perceptions and practices related to the two problems (n = 937, response rate = 31.8%). Frequency analyses, cross tabulations, and qualitative analyses of open answers were used to examine the data. Results 184 retracted papers in MBE journals were identified in 2005–2015 (no retraction was found before 2005). From 2005–2007 to 2012–2015, the number of retractions increased by a factor ten with an all-time high in 2015. The survey to journals with reported retractions illustrates how already a few cases of suspected misconduct put a strain on the editorial workload. The survey to all active journals revealed that 42% of the respondents had started to use software to screen all submitted papers, and that a majority recognized the problem of marginality, as indicated by salami-style submissions. According to some editors, reviewers easily spot such submissions whereas others argued that authors may submit thinly sliced papers in parallel to several journals, which means that this practice is only discovered post-publication. The survey question on ways to support creative contributions stimulated a rich response of ideas regarding editorial vision, engaged boards and developmental approaches. The study uses data from three specialized fields, but its findings may be highly relevant to many journals in the social sciences. PMID:27454761

  13. Surface chemistry improvement of 100mm GaSb for advanced space based applications

    NASA Astrophysics Data System (ADS)

    Allen, L. P.; Flint, J. P.; Meshew, G.; Trevethan, J.; Furlong, M. J.; Martinez, B.; Mobray, A.

    2012-01-01

    As size requirements and pixel viabilities for infrared focal plane arrays (IRFPAs) continue to increase, resolution and sensitivity requirements for high performance advanced imaging systems must meet or surpass stringent demands. Strain layer superlattice (SLS) grown by molecular beam epitaxy (MBE) on 100mm GaSb has necessitated changes in crystal processing and finishing parameters. Device layer growth typically requires a thin (2-5 nm) and highly desorbable surface oxide on very flat substrates for successful MBE. This study compares the ability for rapid pre-epi desoprtion of three different chemo-mechanical (CMP) finishes on 100mm n:GaSb: CMP-1 with sequential double side polished (DSP), CMP-2 with sequential DSP, and CMP-2 with simultaneous double side polished (S-DSP). X-ray photoelectron spectroscopy (XPS) reveals the improvement from a CMP-1 (Ga-oxide rich) to CMP-2 (Sb-oxide rich) surface. No difference in surface chemistry was found between the CMP-2 of the sequential vs. simultaneous DSP. Tropel flatness measurements of the 100mm n:GaSb substrates show that both DSP and SDSP substrate batches yield excellent (<5μm) wafer warp. However, initial studies have shown a more consistent wafer flatness with use of the simultaneous-DSP process. MBE growth on the Sb-rich surface was examined by high resolution XRD and resulted in a 64.7A periodicity and excellent FWHM (~20 arcsec) which verified the GaSb surface finish effectiveness. The resultant surface finish and flatness may provide a benefit for larger diameter GaSb IRFPA applications.

  14. Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers

    NASA Astrophysics Data System (ADS)

    Novikov, S. V.; Staddon, C. R.; Martin, R. W.; Kent, A. J.; Foxon, C. T.

    2015-09-01

    Recent developments with group III nitrides present AlxGa1-xN based LEDs as realistic devices for new alternative deep ultra-violet light sources. Because there is a significant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. X-ray microanalysis measurements confirm that the AlN fraction is uniform across the wafer and mass spectroscopy measurements show that the composition is also uniform in depth. We have demonstrated that free-standing wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of AlN fractions. In order to develop a commercially viable process for the growth of wurtzite AlxGa1-xN substrates, we have used a novel Riber plasma source and have demonstrated growth rates of GaN up to 1.8 μm/h on 2-in. diameter GaAs and sapphire wafers.

  15. Many-Body Basis Set Superposition Effect.

    PubMed

    Ouyang, John F; Bettens, Ryan P A

    2015-11-10

    The basis set superposition effect (BSSE) arises in electronic structure calculations of molecular clusters when questions relating to interactions between monomers within the larger cluster are asked. The binding energy, or total energy, of the cluster may be broken down into many smaller subcluster calculations and the energies of these subsystems linearly combined to, hopefully, produce the desired quantity of interest. Unfortunately, BSSE can plague these smaller fragment calculations. In this work, we carefully examine the major sources of error associated with reproducing the binding energy and total energy of a molecular cluster. In order to do so, we decompose these energies in terms of a many-body expansion (MBE), where a "body" here refers to the monomers that make up the cluster. In our analysis, we found it necessary to introduce something we designate here as a many-ghost many-body expansion (MGMBE). The work presented here produces some surprising results, but perhaps the most significant of all is that BSSE effects up to the order of truncation in a MBE of the total energy cancel exactly. In the case of the binding energy, the only BSSE correction terms remaining arise from the removal of the one-body monomer total energies. Nevertheless, our earlier work indicated that BSSE effects continued to remain in the total energy of the cluster up to very high truncation order in the MBE. We show in this work that the vast majority of these high-order many-body effects arise from BSSE associated with the one-body monomer total energies. Also, we found that, remarkably, the complete basis set limit values for the three-body and four-body interactions differed very little from that at the MP2/aug-cc-pVDZ level for the respective subclusters embedded within a larger cluster. PMID:26574311

  16. Artifacts for Calibration of Submicron Width Measurements

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank; Grunthaner, Paula; Bryson, Charles, III

    2003-01-01

    Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by

  17. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  18. Composite fermions in 2 {times} 10{sup 6} cm{sup 2}/Vs mobility AlGaAs/GaAs heterostructures grown by MOCVD

    SciTech Connect

    Simmons, J.A.; Chui, H.C.; Harff, N.E.; Hammons, B.E.; Du, R.R.; Zudov, M.A.

    1996-08-01

    The authors report on the recent growth by MOCVD of 2.0 {times} 106 cm2/Vs mobility heterostructures. These mobilities, the highest reported to date, are attributed to the use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect (FQHE) states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. The extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples.

  19. Composite fermions in 2 x 10{sup 6} cm{sup 2}/Vs mobility A1GaAs/GaAs heterostructures grown by MOCVD

    SciTech Connect

    Simmons, J.A., Chui, H.C., Harff, N.E., Hammons, B.E.; Du, R.R., Zudov, M.A.

    1996-12-31

    Recent growth by MOCVD (metalorganic chemical vapor deposition) of 2.0x10{sup 6} cm{sup 2}/Vs mobility heterostructures are reported. These mobilities, the highest reported to date, are attributed to use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. Extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples.

  20. Absorption coefficients of GeSn extracted from PIN photodetector response

    NASA Astrophysics Data System (ADS)

    Ye, Kaiheng; Zhang, Wogong; Oehme, Michael; Schmid, Marc; Gollhofer, Martin; Kostecki, Konrad; Widmann, Daniel; Körner, Roman; Kasper, Erich; Schulze, Jörg

    2015-08-01

    In this paper the optical absorption of the GeSn PIN photodetector was investigated. The vertical GeSn PIN photodetectors were fabricated by molecular beam epitaxy (MBE) and dry etching. By means of current density-voltage (J-V) and capacity-voltage (C-V) measurements the photodetector device was characterized. The absorption coefficients of GeSn material were finally extracted from the optical response of PIN structure. With further direct bandgap analysis the influences of device structure was proved negligible.

  1. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    NASA Astrophysics Data System (ADS)

    Gotschke, T.; Schumann, T.; Limbach, F.; Stoica, T.; Calarco, R.

    2011-03-01

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  2. Graded Al sub x Ga sub 1-x as photoconductive devices for high efficiency picosecond optoelectronic switching

    SciTech Connect

    Morse, J.D.; Mariella, R.P. ); Dutton, R.W. . Center for Integrated Systems)

    1990-10-01

    Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.

  3. Off-axis sputter deposition of thin films

    SciTech Connect

    Capuano, L.A.; Newman, N. )

    1990-01-01

    Currently there are several techniques for making high Tc thin films, e.g., sputter deposition, laser ablation, coevaporation (including MBE), chemical vapor deposition and solution coating/pyrolysis. Of these techniques, the authors have demonstrated that high-pressure in-situ off-axis rf-magnetron sputter deposition is a simple, relatively inexpensive process capable of reproducibly yielding YBCO superconducting thin films with excellent surface resistance properties. This article describes the off-axis technique, the basic equipment requirements and the performance characteristics of high Tc superconductor films produced using this technique.

  4. Structure and magnetization in CoPd thin films and nanocontacts

    NASA Astrophysics Data System (ADS)

    Morgan, Caitlin; Schmalbuch, Klaus; García-Sánchez, Felipe; Schneider, Claus M.; Meyer, Carola

    2013-01-01

    We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed.

  5. A theoretical and experimental study of λ>2 μm luminescence of quantum dots on InP substrate

    NASA Astrophysics Data System (ADS)

    Doré, F.; Even, J.; Cornet, C.; Schliwa, A.; Bertru, N.; Dehaese, O.; Alghoraibi, I.; Folliot, H.; Piron, R.; Le Corre, A.; Loualiche, S.

    2007-04-01

    Theoretical and experimental studies of the electronic properties of InAs(Sb) quantum dots (QDs) grown by molecular beam epitaxy (MBE) on InP(100) substrate are presented. Eight-band kṡp calculations including strain and piezoelectric effects are performed on InAs/InP(100) quantum dot (QD) structure to study the influence of the quantum dot height. Photoluminescence (PL) spectroscopy experiments show promising results. High arsine flow rate during the growth of InAs QDs makes possible long emission wavelength beyond 2 μm. Emission wavelength as long as 2.35 μm is observed with InAsSb QDs.

  6. Growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bicknell-Tassius, Robert N.

    1991-08-01

    The successful MBE growth of CdMnTe-CdTe heterostructures and superlattices has demonstrated the feasibility of growing layered structures incorporating dilute magnetic semiconductor materials (DMS). These materials exhibit new and interesting properties. These properties allow the band-gap engineering to continue after the structure has been grown through the application of an external magnetic field. During the growth process the engineering can be accomplished through traditional means, i.e., through the choice of layer thickness and/or the choice of the strain state of the structure.

  7. Direct growth of AlGaAs/GaAs single quantum wells on GaAs substrates cleaned by Electron Cyclotron Resonance (ECR) hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Kondo, Naoto; Nanishi, Yasushi; Fujimoto, Masatomo

    1994-01-01

    Direct growth of AlGaAs/GaAs single quantum wells (SQWs) on GaAs substrates without growing buffer layers is carried out by using electron cyclotron resonance (ECR) hydrogen plasma cleaning. SQW structures are successively grown by molecular beam epitaxy (MBE) after the cleaning process without breaking the vacuum. Photoluminescence shows intense and narrow spectra, in clear contrast to that of conventional thermal cleaning. Atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) analyses show that surface roughness and interface impurity accumulations are significantly reduced as well. A flat and clean surface obtained by plasma cleaning improves the quality of grown layers.

  8. Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma

    NASA Astrophysics Data System (ADS)

    Kondo, Naoto; Nanishi, Yasushi; Fujimoto, Masatomo

    1994-01-01

    Direct growth of AlGaAs/GaAs single quantum wells (SQWs) on GaAs substrates without growing buffer layers is carried out by using electron cyclotron resonance (ECR) hydrogen plasma cleaning. SQW structures are successively grown by molecular beam expitaxy (MBE) after the cleaning process without breaking the vacuum. Photoluminescence shows intense and narrow spectra, in clear contrast to that of conventional thermal cleaning. Atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) analyses show that surface roughness and interface impurity accumulations are significantly reduced as well. A flat and clean surface obtained by plasma cleaning improves the quality of grown layers.

  9. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-06-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  10. Multiple spin flip transitions and stairs-like GMR in Fe/Cr superlattices with uniaxial in-plane anisotropy

    NASA Astrophysics Data System (ADS)

    Ustinov, V. V.; Milayev, M. A.; Romashev, L. N.; Krinitsina, T. P.; Burkhanov, A. M.; Lauter-Pasyuk, V. V.; Lauter, H. J.

    2006-05-01

    The [Fe/Cr]N superlattices with the uniaxial in-plane anisotropy and the stairs-like dependences of magnetization and magnetoresistance on a magnetic field were MBE-grown on special (2 1 1)MgO substrates. It is shown that the "steps" on the M(H) and ΔR/R(H) dependences are results of the multiple spin-flip transitions, i.e. 180°-reorientation of magnetic moments of ferromagnetic sublayers in the superlattices. The transitions are found to be very sensitive to small variations of the Cr layers thickness.

  11. Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Takehara, Yuji; Yoshimoto, Masahiro; Huang, Wei; Saraie, Junji; Oe, Kunishige; Chayahara, Akiyoshi; Horino, Yuji

    2006-01-01

    GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%.

  12. Electron beam pumping of CdZnSe quantum well laser structures using a variable energy electron beam

    NASA Astrophysics Data System (ADS)

    Trager-Cowan, C.; Bagnall, D. M.; McGow, F.; McCallum, W.; O'Donnell, K. P.; Smith, P. C.; Wright, P. J.; Cockayne, B.; Prior, K. A.; Mullins, J. T.; Horsburgh, G.; Cavenett, B. C.

    1996-02-01

    In this paper we present experimental results on electron beam pumping of MBE and MOVPE lasers with CdZnSe single quantum wells. Laser emission in the gree and blue occurs under pulsed excitation, with threshold power densities typically less than 2 kW/cm 2 at low temperatures. Threshold curves obtained at different electron beam energies show that there is an optimum electron beam energy for wells at a given depth below the surface. This suggests that it is possible to match the electron beam energy to a given structure. Results are broadly consistent with Monte Carlo calculations of the depth dependence of the energy deposition of the electron beam.

  13. High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

    NASA Technical Reports Server (NTRS)

    Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

    2013-01-01

    In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

  14. Long wavelength semiconductor lasers development for infrared heterodyne applications

    NASA Technical Reports Server (NTRS)

    Feit, Zeev; Kostyk, Douglas

    1989-01-01

    PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

  15. Atomic layer epitaxy of II-VI quantum wells and superlattices

    NASA Astrophysics Data System (ADS)

    Faschinger, W.

    1993-01-01

    Atomic Layer Epitaxy (ALE) under ultra high vacuum conditions is a variation of MBE which makes use of a self-regulating growth process, leading to digital growth in steps of monolayers or even fractions of monolayers. We report on fundamental aspects of the ALE growth of tellurides and selenides, and give three examples on the physics of ALE-grown structures: (a) Phonon confinement in CdTe/ZnTe superlattices (b) "Spin Sheet" superlattices of cubic MnTe with CdTe and (c) Luminescence tuning in ultra-thin CdSe quantum wells embedded in ZnSe.

  16. Compensating vacancy defects in Sn- and Mg-doped In2O3

    NASA Astrophysics Data System (ADS)

    Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; Galazka, Z.

    2014-12-01

    MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3 , however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

  17. Analysis of Etched CdZnTe Substrates

    NASA Astrophysics Data System (ADS)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  18. Pb/sub 1-x/Sn/sub x/Se/Pb/sub 1-x-y/Eu/sub y/Sn/sub x/Se corrugated diode lasers

    SciTech Connect

    Shani, Y.; Katzir, A.; Tacke, M.; Preier, H.M.

    1989-08-01

    Distributed Bragg reflector (DBR), distributed feedback (DFB), and grating coupled emission (GCE) Pb/sub 1-x/Sn/sub x/Se/Pb/sub 1-x-y/Eu/sub y/Sn/sub x/Se double heterostructure stripe geometry molecular-beam epitaxy (MBE)-grown diodes lasers were designed, fabricated, and tested in this work. These DBR and DFB lasers were the first Pb-salt corrugated lasers to operate in CW (continuous) mode at temperatures above that of liquid nitrogen. With the GCE lasers, a narrow far field distribution of --5/sup 0/ was obtained for the first time.

  19. On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ohishi, M.; Yoneta, M.; Ishii, S.; Ohura, M.; Hiroe, Y.; Saito, H.

    1996-02-01

    Sharp and semicircular patterns were observed in RHEED during the MBE growth of Li- or Na-acceptor doped ZnSe and ZnS on GaAs(001). The radius and the separation between the diffraction circles vary with the change of the azimuth of the incident electron beam. Calculated diffraction patterns assuming that Li or Na atoms are arrayed one-dimensionally along the [110] direction of the crystal axis are in good agreement with the experimental results. We conclude that Li or Na atoms are incorporated at the [110] terrace steps, which prevents the further growth from the step edge.

  20. Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si(001) substrates

    SciTech Connect

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Dhamdhere, Ajit; Smith, David J.; Demkov, Alexander A.; Ekerdt, John G.

    2013-01-15

    Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiO{sub x} layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 Degree-Sign C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si-O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 Degree-Sign C for 30 min in moderate to high vacuum (10{sup -6}-10{sup -9} Torr) removed the carbon species. Higher annealing temperatures (>275 Degree-Sign C) gave rise to a small increase in Si-O bonding, as indicated by XPS, but no reduced Ti species were observed. X-ray diffraction revealed that the as-deposited STO films were c-axis oriented and fully crystalline. A rocking curve around the STO(002) reflection gave a full width at half maximum of 0.30 Degree-Sign {+-} 0.06 Degree-Sign for film thicknesses ranging from 5 to 25 nm. Cross-sectional transmission electron microscopy revealed that the STO films were continuous with conformal growth to the substrate and smooth interfaces between the ALD- and MBE-grown STO. Overall, the results indicate that thick, crystalline STO can be grown on Si(001) substrates by ALD with minimal formation of an amorphous SiO{sub x} layer using a four-unit-cell STO buffer layer grown by MBE to serve as the surface template.