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Sample records for perpendicular magnetic films

  1. Magnetization reversal mechanism of Nd-Fe-B films with perpendicular magnetic anisotropy

    SciTech Connect

    Liu Xiaoxi; Ishida, Go; Morisako, Akimitsu

    2011-04-01

    The microstructure and magnetic properties of Nd-Fe-B films with thicknesses from 100 nm to 3 nm have been investigated. All the films show excellent perpendicular magnetic anisotropy with a squareness ratio of 1 in the perpendicular direction and almost zero coercivity in the in-plane direction. Of particular interest is that the initial magnetization curves sensitively depended on the film thickness. Films thicker than 15 nm show steep initial magnetization curve. Although the films have coercivities larger than 21 kOe, the films can be fully magnetized from the thermally demagnetized state with a field as small as 5 kOe. With the decrease of film thickness to 5 nm, the initial magnetization curve becomes flat. The evolution of initial magnetization curves with film thickness can be understood by the microstructure of the films. Films with thickness of 15 nm show close-packed grains without any intergranular phases. Such microstructures lead to steep initial magnetization curves. On the other hand, when the film thickness decreased to 3 nm, the film thickness became nonuniform. Such microstructure leads to flat initial magnetization curves.

  2. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  3. Magnetic Thin Films for Perpendicular Magnetic Recording Systems

    NASA Astrophysics Data System (ADS)

    Sugiyama, Atsushi; Hachisu, Takuma; Osaka, Tetsuya

    In the advanced information society of today, information storage technology, which helps to store a mass of electronic data and offers high-speed random access to the data, is indispensable. Against this background, hard disk drives (HDD), which are magnetic recording devices, have gained in importance because of their advantages in capacity, speed, reliability, and production cost. These days, the uses of HDD extend not only to personal computers and network servers but also to consumer electronics products such as personal video recorders, portable music players, car navigation systems, video games, video cameras, and personal digital assistances.

  4. Perpendicular magnetization reversal mechanism of functional FePt films for magnetic storage medium

    NASA Astrophysics Data System (ADS)

    Wei, Da-Hua; Chi, Po-Wei; Chao, Chung-Hua

    2014-11-01

    Magnetization reversal mechanism and related surface morphology of functional FePt(001) alloy films with large perpendicular magnetic anisotropy have been explored by alternate-atomic-layer deposition onto Pt/MgO(100) substrates via electron beam evaporation, and all evaporated films have been kept at in-situ substrate heating temperature of 400 °C. The FePt alloy film was composed of ultrathin [Fe (0.5 nm)/Pt (0.5 nm)]n Fe/Pt multilayer structures. The corresponding thickness of multilayer films was controlled by the periodic bilayer numbers (n) and varied in the range from 15 nm (n = 15) to 30 nm (n = 30). The surface topography was observed and varied from granular-like island to continuous microstructures with increasing the periodic numbers of Fe/Pt bilayer films. The measurement of angular dependent coercivity showed a tendency of the near rotation of reverse-domain type (n = 15) shift towards the domain-wall motion as a typical peak behavior (n = 30) with increasing the periodic bilayer numbers of Fe/Pt multilayers. On the basis of all magnetic measurements and corresponding magnetization analysis, indicating that the perpendicular magnetization reversal mechanism and related surface morphology of ordered FePt(001) alloy films could be systematically controlled by varying the periodic bilayer numbers accompanied with the thickness dependence.

  5. Magnetoelastically induced perpendicular magnetic anisotropy and perpendicular exchange bias of CoO/CoPt multilayer films

    NASA Astrophysics Data System (ADS)

    Guo, Lei; Wang, Yue; Wang, Jian; Muraishi, Shinji; Sannomiya, Takumi; Nakamura, Yoshio; Shi, Ji

    2015-11-01

    The effects of magnetoelastically induced perpendicular magnetic anisotropy (PMA) on perpendicular exchange bias (PEB) have been studied in [CoO5nm/CoPt5nm]5 multilayer films. After deposition at room temperature, [CoO5nm/CoPt5nm]5 multilayer films were post-annealed at 100 °C, 250 °C, 300 °C and 375 °C for 3 h. In-plane tensile stress of CoPt layer was calculated by sin2 φ method, and we found it increased gradually upon annealing from 0.99 GPa (as-deposited) up to 3.02 GPa (300 °C-annealed). As to the magnetic property, significant enhancement of PMA was achieved in [CoO5nm/CoPt5nm]5 multilayer films after annealing due to the increase of CoPt layer in-plane tensile stress. With the enhancement of magnetoelastically induced PMA, great improvement of PEB was also achieved in [CoO5nm/CoPt5nm]5 multilayer films, which increased from 130 Oe (as-deposited) up to 1060 Oe (300 °C-annealed), showing the same change tendency as PMA and the strong correlation with CoPt layer in-plane tensile stress. We consider it is the increase of CoPt layer in-plane tensile stress that leads to the enhancement of CoPt layer PMA, which is favorable for the spins in CoPt layer aligning to a more perpendicular direction. And thus the enhanced PMA with more perpendicular spins alignment in CoPt layer results in the improved PEB in [CoO5nm/CoPt5nm]5 multilayer films through enhanced perpendicular spins coupling at CoO/CoPt interfaces.

  6. Thermal Stability of Magnetic States in Circular Thin-Film Nanomagnets with Large Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Chaves-O'Flynn, Gabriel

    The scaling of the energy barrier to magnetization reversal in thin-film nanomagnets with perpendicular magnetization as a function of their lateral size is of great interest and importance for high-density magnetic random access memory devices. Experimental studies of such elements show either a quadratic or linear dependence of the energy barrier on element diameter. I will discuss a theoretical model we developed to determine the micromagnetic configurations that set the energy barrier for thermally activated reversal of a thin disk with perpendicular magnetic anisotropy as a function of disk diameter. We find a critical length in the problem that is set by the exchange and effective perpendicular magnetic anisotropy energies, with the latter including the size dependence of the demagnetization energy. For diameters smaller than this critical length, the reversal occurs by nearly coherent magnetization rotation and the energy barrier scales with the square of the diameter normalized to the critical length (for fixed film thickness), while for larger diameters, the transition state has a domain wall, and the energy barrier depends linearly on the normalized diameter. Simple analytic expressions are derived for these two limiting cases and verified using full micromagnetic simulations with the string method. Further, the effect of an applied field is considered and shown to lead to a plateau in the energy barrier versus diameter dependence at large diameters. Based on these finding I discuss the prospects and material challenges in the scaling of magnetic memory devices based on thin films with strong perpendicular magnetic anisotropy. In collaboration with G. Wolf, J. Z. Sun and A. D. Kent. Supported by NSF-DMR-1309202 and in part by Spin Transfer Technologies Inc. and the Nanoelectronics Research Initiative through the Institute for Nanoelectronics Discovery and Exploration.

  7. Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy.

    PubMed

    Li, Peng; Liu, Tao; Chang, Houchen; Kalitsov, Alan; Zhang, Wei; Csaba, Gyorgy; Li, Wei; Richardson, Daniel; DeMann, August; Rimal, Gaurab; Dey, Himadri; Jiang, J S; Porod, Wolfgang; Field, Stuart B; Tang, Jinke; Marconi, Mario C; Hoffmann, Axel; Mryasov, Oleg; Wu, Mingzhong

    2016-01-01

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500 Oe when the film is switched with an out-of-plane field. PMID:27581060

  8. Evaporated CoPt alloy films with strong perpendicular magnetic anisotropy (abstract)

    NASA Astrophysics Data System (ADS)

    Lin, C.-J.; Gorman, G. L.

    1993-05-01

    Co/Pt multilayers with large Kerr rotations at short wavelengths and the magnetic and material properties desired for magneto-optical (MO) recording have been studied extensively as potential future MO materials. Very good recording performance has been demonstrated.1 However, the typical constituent layers in Co/Pt multilayers are very thin, 0.2-0.4 nm Co layers and about 1 nm/Pt layers. To manufacture Co/Pt multilayers consisting of 10-30 periods of such thin Co and Pt layers is certainly quite a challenge. One would prefer to deal with CoPt alloys if the alloys can be made to have large perpendicular magnetic anisotropy and coercivity. Previously no one was able to directly deposit CoPt alloy films with large perpendicular magnetic anisotropy and saturated remanence. Here we will demonstrate for the first time that CoPt alloy films with large perpendicular magnetic anisotropy and coercivity, and saturated remanence can be directly deposited by e-beam evaporation onto heated substrates, at 200 °C or above. Furthermore, we will demonstrate that the perpendicular magnetic anisotropy of CoPt alloy films can be dramatically enhanced by well (111)-textured Pt underlayers. The key to this success appears to be in controlling the crystallographic orientation of these alloy films such that the CoPt(111) lattice plane is parallel to the film surface. CoPt alloys with wide composition range, e.g., 25-57 at. % Co, have been obtained with saturated perpendicular magnetic remanence, indicating that the perpendicular magnetic anisotropy obtained in these alloy films is not related to the ordered tetragonal Co50Pt50 phase. Further work, however, is needed to clarify the anisotropy mechanism in these CoPt alloy films.

  9. Field orientation dependence of magnetization reversal in thin films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Hovorka, Ondrej; Berger, Andreas

    2016-08-01

    The magnetization reversal process of hexagonal-close-packed (hcp) (0001) oriented Co and C o90R u10 thin films with perpendicular magnetic anisotropy (PMA) has been studied as a function of temperature and applied magnetic field angle. Room temperature pure cobalt exhibits two characteristic reversal mechanisms. For angles near in-plane field orientation, the magnetization reversal proceeds via instability of the uniform magnetic state, whereas in the vicinity of the out-of-plane (OP) orientation, magnetization inversion takes place by means of domain nucleation. Temperature dependent measurements enable the modification of the magnetocrystalline anisotropy and reveal a gradual disappearance of the domain nucleation process during magnetization reversal for elevated temperatures. Ultimately, this suppression of the domain nucleation process leads to the exclusive occurrence of uniform state instability reversal for all field orientations at sufficiently high temperature. Comparative magnetic measurements of C o90R u10 alloy samples allow the identification and confirmation of the high temperature remanent magnetization state of cobalt as an OP stripe domain state despite the reduction of magnetocrystalline anisotropy. Detailed micromagnetic simulations supplement the experimental results and corroborate the physical understanding of the temperature dependent behavior. Moreover, they enable a comprehensive identification of the complex energy balance in magnetic films with PMA, for which three different magnetic phases occur for sufficiently high anisotropy values, whose coexistence point is tricritical in nature.

  10. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films.

    PubMed

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H B; Wang, J; Ma, B; Jin, Q Y

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  11. CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Fukami, Shunsuke; Sato, Hideo; Yamanouchi, Michihiko; Ikeda, Shoji; Ohno, Hideo

    2013-07-01

    We investigate the magnetic properties of CoNi and CoPt films prepared by an alternate monoatomic layer deposition and discuss the possible existence of a metastable superlattice structure. We find that, as has been reported for the CoPt and CoPd films, the CoNi film also exhibits a perpendicular magnetic anisotropy when the monoatomic Co and Ni layers are stacked alternately, suggesting the possible formation of superlattice structure. Since the CoNi film contains neither noble nor rare-earth metals, it should be an attractive material system for applications.

  12. Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

    SciTech Connect

    Yanagihara, H. Utsumi, Y.; Niizeki, T. Inoue, J.; Kita, Eiji

    2014-05-07

    We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

  13. Sputtering of cobalt film with perpendicular magnetic anisotropy on disorder-free graphene

    SciTech Connect

    Jamali, Mahdi; Lv, Yang; Zhao, Zhengyang; Wang, Jian-Ping

    2014-10-15

    Growth of thin cobalt film with perpendicular magnetic anisotropy has been investigated on pristine graphene for spin logic and memory applications. By reduction of the kinetic energy of the sputtered atoms using indirect sputtered deposition, deposition induced defects in the graphene layer have been controlled. Cobalt film on graphene with perpendicular magnetic anisotropy has been developed. Raman spectroscopy of the graphene surface shows very little disorder induced in the graphene by the sputtering process. In addition, upon increasing the cobalt film thickness, the disorder density increases on the graphene and saturates for thicknesses of Co layers above 1 nm. The AFM image indicates a surface roughness of about 0.86 nm. In addition, the deposited film forms a granular structure with a grain size of about 40 nm.

  14. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    PubMed Central

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-01-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices. PMID:26190066

  15. Perpendicular magnetic anisotropy and magnetization dynamics in oxidized CoFeAl films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Zhang, Zhe; Li, Le; Zhang, Zongzhi; Zhao, H. B.; Wang, J.; Ma, B.; Jin, Q. Y.

    2015-07-01

    Half-metallic Co-based full-Heusler alloys with perpendicular magnetic anisotropy (PMA), such as Co2FeAl in contact with MgO, are receiving increased attention recently due to its full spin polarization for high density memory applications. However, the PMA induced by MgO interface can only be realized for very thin magnetic layers (usually below 1.3 nm), which would have strong adverse effects on the material properties of spin polarization, Gilbert damping parameter, and magnetic stability. In order to solve this issue, we fabricated oxidized Co50Fe25Al25 (CFAO) films with proper thicknesses without employing the MgO layer. The samples show controllable PMA by tuning the oxygen pressure (PO2) and CFAO thickness (tCFAO), large perpendicular anisotropy field of ~8.0 kOe can be achieved at PO2 = 12% for the sample of tCFAO = 2.1 nm or at PO2 = 7% for tCFAO = 2.8 nm. The loss of PMA at thick tCFAO or high PO2 results mainly from the formation of large amount of CoFe oxides, which are superparamagnetic at room temperature but become hard magnetic at low temperatures. The magnetic CFAO films, with strong PMA in a relatively wide thickness range and small intrinsic damping parameter below 0.028, would find great applications in developing advanced spintronic devices.

  16. Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films with Perpendicular Magnetic Anisotropy

    NASA Technical Reports Server (NTRS)

    Skuza, J. R.; Clavero, C.; Yang, K.; Wincheski, B.; Lukaszew, R. A.

    2009-01-01

    L1(sub 0)-ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

  17. Enhancement of perpendicular magnetic anisotropy by compressive strain in alternately layered FeNi thin films.

    PubMed

    Sakamaki, M; Amemiya, K

    2014-04-23

    The effect of the lattice strain on magnetic anisotropy of alternately layered FeNi ultrathin films grown on a substrate, Cu(tCu = 0-70 ML)/Ni(48)Cu(52)(124 ML)/Cu(0 0 1) single crystal, is systematically studied by means of in situ x-ray magnetic circular dichroism (XMCD) and reflection high-energy electron diffraction (RHEED) analyses. To investigate the magnetic anisotropy of the FeNi layer itself, a non-magnetic substrate is adopted. From the RHEED analysis, the in-plane lattice constant, ain, of the substrate is found to shrink by 0.8% and 0.5% at tCu = 0 and 10 ML as compared to that of bulk Cu, respectively. Fe L-edge XMCD analysis is performed for n ML FeNi films grown on various ain, and perpendicular magnetic anisotropy (PMA) is observed at n = 3 and 5, whereas the film with n = 7 shows in-plane magnetic anisotropy. Moreover, it is found that PMA is enhanced with decreasing ain, in the case where a Cu spacer layer is inserted. We suppose that magnetic anisotropy in the FeNi films is mainly carried by Fe, and the delocalization of the in-plane orbitals near the Fermi level increases the perpendicular orbital magnetic moment, which leads to the enhancement of PMA. PMID:24695244

  18. Perpendicular Magnetic Anisotropy in Co-Based Full Heusler Alloy Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Xu, X. G.; Miao, J.; Jiang, Y.

    2015-12-01

    Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.

  19. Fabrication and properties of Nd(Tb,Dy)Co/Cr films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Cheng, Weiming; Miao, Xiangshui; Yan, Junbing; Cheng, Xiaomin

    2009-08-01

    Light rare earth-heavy rare earth-transition metal films (LRE-HRE-TM)have large saturation magnetization (Ms) and are the promising media for hybrid recording. In this paper, Nd(Tb,Dy)Co/Cr films with perpendicular magnetic anisotropy were successfully fabricated onto glass substrate by RF magnetron sputtering and the effects of sputtering technology parameters and Nd substitution for HRE atoms on the magnetic properties were investigated. It was found that when the sputtering power and sputtering time are 250W and 4min, respectively, the magnetic properties of Nd(Tb,Dy)Co/Cr films obtain optimization, perpendicular coercivity, Ms and remanence square ratio(S) of NdTbCo/Cr film reach 3.8kOe, 247emu/cm3 and 0.801, respectively. With the increasing of Nd concentration, Ms increases, while the coercivity (Hc)and the temperature stability of magnetic properties decrease distinctly. These results can be explained by the ferri-magnetic structure of the RE-TM alloy.

  20. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-01

    B2-ordered Co2FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering ˜81.2% with a low damping parameter (α) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 °C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co2FeAl films annealed at 350 °C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing α significantly. However, the observed damping of Co2FeAl films was still lower than that of Co60Fe20B20 films prepared at the same thickness and annealing temperature.

  1. Confined stripe structure in periodically grooved NdCo Films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Martin, Jose I.; Hierro-Rodriguez, Aurelio; Cid, Rosalia; Rodriguez-Rodriguez, Gabriel; Velez, Maria; Alvarez-Prado, Luis M.; Alameda, Jose M.

    2012-02-01

    Magnetic multilayers are broad research field with many interesting phenomena depending on interlayer coupling. Also, since the development of nanolithography techniques, magnetic nanowires and dots have been intensively investigated [1]. Recently, as a combination of these two fields, the concept of magnetic lateral superlattice has emerged: continuous magnetic films with a lateral modulation of their magnetic properties at submicrometric length scale [2]. In this work, we have fabricated amorphous Nd-Co films with perpendicular magnetic anisotropy and a periodic thickness modulation by e-beam lithography and ion milling. Lateral periods range from 2 μm - 500 nm and groove depths from 10 to 30 nm. MFM and Kerr magnetometry have been used for characterization. Lateral patterning modifies the interplay between magnetostatic energy, perpendicular and in plane anisotropy and exchange interaction resulting in confined magnetic stripe structures. The different regimes that appear depending on the size of the periodic thickness modulation relative to the magnetic stripe period will be discussed. [1] J.I Martin et al, JMMM, 256 (2003) 449 [2] S. P. Li et al, PRL 88 (2002) 087202; N. Martin et al, PRB 83 (2010) 174423

  2. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  3. Perpendicular magnetization of Co2FeAl full-Heusler alloy films induced by MgO interface

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Mitani, Seiji; Inomata, Koichiro

    2011-06-01

    The perpendicular magnetization of Co2FeAl (CFA) full-Heusler alloy films was achieved in the structures of CFA/MgO and MgO/CFA with the perpendicular magnetic anisotropy energy density (KU) of 2-3×106 erg/cm3, which can be used as the perpendicular ferromagnetic electrodes of MgO-based magnetic tunnel junctions (MTJs) with high thermal stability at sub-50-nm dimension. The CFA thickness dependence of KU was investigated at different annealing temperatures, indicating that the perpendicular anisotropy of CFA is contributed by the interfacial anisotropy between CFA and MgO. This letter will open up a way for obtaining perpendicular magnetization of Co-based full-Heusler alloys, which is promising for further reduction in the critical current of current induced magnetization switching in MgO-based MTJ nanopillars with perpendicular full-Heusler alloy electrodes.

  4. Co2FeAl films with perpendicular magnetic anisotropy in multilayer structure

    NASA Astrophysics Data System (ADS)

    Li, X. Q.; Xu, X. G.; Yin, S. Q.; Zhang, D. L.; Miao, J.; Jiang, Y.

    2011-01-01

    We have fabricated Co2FeAl (CFA) films with perpendicular magnetic anisotropy (PMA) in a (Co2FeAl/Ni)6 multilayer structure. The effects of underlayer Cu thickness (tCu), Co2FeAl thickness (tCFA) and Ni thickness (tNi) on the magnetic properties have been studied. The PMA is realized with a large anisotropy energy density K = 3.7×106 ergs/cm3, a high squareness Mr/Ms = 1 and a small perpendicular coercivity Hc = 60 Oe, while tCu, tCFA and tNi are 9 nm, 0.2 nm and 0.6 nm respectively. The PMA remains after 300 °C annealing, which demonstrates better thermal stability of the (Co2FeAl/Ni)6 multilayer than that of (Co/Ni)n.

  5. Electron theory of perpendicular magnetic anisotropy of Co-ferrite thin films

    SciTech Connect

    Inoue, Jun-ichiro; Yanagihara, Hideto; Kita, Eiji; Niizeki, Tomohiko; AIMR, Tohoku University, Sendai 980-8577 ; Itoh, Hiroyoshi

    2014-02-15

    We develop an electron theory for the t{sub 2g} electrons of Co{sup 2+} ions to clarify the perpendicular magnetic anisotropy (PMA) mechanism of Co-ferrite thin films by considering the spin-orbit interaction (SOI) and crystal-field (CF) potentials induced by the local symmetry around the Co ions and the global tetragonal symmetry of the film. Uniaxial and in-plane MA constants K{sub u} and K{sub 1} at 0 K, respectively, are calculated for various values of SOI and CF. We show that reasonable parameter values explain the observed PMA and that the orbital moment for the in-plane magnetization reduces to nearly half of that of the out-of-plane magnetization.

  6. Gilbert damping parameter characterization in perpendicular magnetized Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Cui, Yishen; Lu, Jiwei; Khodadadi, Behrouz; Schäfer, Sebastian; Mewes, Tim; Wolf, Stuart

    2013-03-01

    Materials with perpendicular magnetic anisotropy(PMA) have gotten extensive recent attention because of their potential application in spintronic devices such as spin transfer torque random access memory (STT-RAM). It was shown that a much lower switching current density(JC) is required to write STT-RAM tunnel junctions with perpendicular magnetic anisotropy ferromagnetic electrodes (p-MTJ). Additionally Heusler alloy Co2FeAl is expected to further reduce JC due to its ultra low Gilbert damping parameter. In our study, Heusler alloy Co2FeAl films were prepared using a Biased Target Ion Beam Deposition (BTIBD) technique. We demonstrated a low Gilbert damping parameter achieved in thick B2-Co2FeAl films. Besides, we achieved an interfacial PMA in ultra thin Co2FeAl films by rapid thermal annealing (RTA) with no external field presented. Annealing conditions were carefully adjusted to maximize the interfacial PMA. However it was noticed that a higher annealing temperature was required for a low damping parameter which to some extent sacrificed the interfacial PMA. We also deposited ultra thin CoFeB films and characterized their damping parameters for comparison. We acknowledge the financial support from DARPA.

  7. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki Ohkubo, Tadakatsu; Kasai, Shinya; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  8. Anomalous Nernst Effect of Perpendicularly Magnetic Anisotropy TbFeCo Thin Films

    NASA Astrophysics Data System (ADS)

    Ando, Ryo; Komine, Takashi; Hasegawa, Yasuhiro

    2016-07-01

    In this study, we investigated anomalous Nernst effect (ANE) of perpendicularly magnetized TbFeCo thin films with various Tb content, and especially studied the relation between ANE and anomalous Hall effect. As a result, the hysteresis of anomalous Nernst coefficient showed the same behavior as that of anomalous Hall resistivity, and the sign of anomalous Nernst coefficient was consistent with that of anomalous Hall voltage in any Tb content, whereas the Seebeck coefficient and the resistivity were almost constant even if the applied magnetic field was varied. Taking into account of thermoelectric coefficient tensor, it was revealed that the off-diagonal thermopower corresponding to the ANE in TbFeCo thin films is the product of Hall angle and Seebeck coefficient.

  9. L10 FePt-based thin films for future perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Varvaro, G.; Laureti, S.; Fiorani, D.

    2014-11-01

    Current magnetic recording media using perpendicular CoCrPt-Oxide granular films are reaching their physical limit (approx 750 Gbit/in2 density) due to thermal fluctuations that hinder a further reduction of grain size (<6-7 nm) needed to scale down the bit size. L10-FePt alloy is currently considered the most promising candidate for future recording media with areal densities above 1 Tbit/in2 thanks to its high magneto-crystalline anisotropy (K=6-10 MJ/m3), which enables it to be thermally stable even at grain sizes down to 3 nm. However, its huge anisotropy implies an increase of the switching field, which cannot be afforded by current available write heads. To simultaneously address the writability and thermal stability requirements, exchange coupled composite media, combining two or multiphase hard and soft materials, where the hard phase provides thermal stability and the soft phase reduces the switching field, have been recently proposed. This paper briefly reviews the fundamental aspects as well as both experimental approaches and magnetic properties of L10 FePt-based single phase films and exchange coupled systems for future perpendicular magnetic recording media.

  10. Measuring and tailoring the Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films

    NASA Astrophysics Data System (ADS)

    Hrabec, A.; Porter, N. A.; Wells, A.; Benitez, M. J.; Burnell, G.; McVitie, S.; McGrouther, D.; Moore, T. A.; Marrows, C. H.

    2014-07-01

    We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin films of Pt/Co/Pt and Pt/Co/Ir/Pt. To study the effective DMI, arising at either side of the ferromagnet, we use a field-driven domain wall creep-based method. The use of only magnetic field removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. Inserting an ultrathin layer of Ir at the top Co/Pt interface allows us to access the DMI contribution from the top Co/Pt interface. We show that the insertion of a thin Ir layer leads to reversal of the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously changes the domain wall structure from the right- to the left-handed Néel wall. The use of two DMI-active layers offers an efficient way of DMI tuning and enhancement in thin magnetic films. The comparison with an epitaxial Pt/Co/Pt multilayer sheds more light on the origin of DMI in polycrystalline Pt/Co/Pt films and demonstrates an exquisite sensitivity to the exact details of the atomic structure at the film interfaces.

  11. Field-dependent perpendicular magnetic anisotropy in CoFeB thin films

    SciTech Connect

    Barsukov, I. Krivorotov, I. N.; Fu, Yu; Gonçalves, A. M.; Sampaio, L. C.; Spasova, M.; Farle, M.; Arias, R. E.

    2014-10-13

    We report ferromagnetic resonance measurements of perpendicular magnetic anisotropy in thin films of Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO as a function of the Co{sub 20}Fe{sub 60}B{sub 20} layer thickness. The first and second order anisotropy terms show unexpectedly strong dependence on the external magnetic field applied to the system during the measurements. We propose strong interfacial spin pinning as a possible origin of the field-dependent anisotropy. Our results imply that high-field anisotropy measurements cannot be directly used for quantitative evaluation of zero-field performance parameters of CoFeB-based devices such as spin torque memory.

  12. Effects of soft layer softness on the magnetic properties of perpendicular exchange-coupled nanocomposite films

    NASA Astrophysics Data System (ADS)

    Tang, Rujun; Chua, Sherlyn; Zhang, Wanli; Li, Yanrong

    2011-11-01

    The anisotropy of the soft layer in the Co 100- xPt x/Co 71Pt 29 ( x=0, 7 and 17) perpendicular exchange-coupled composite (ECC) films was varied by changing the Pt content. The effects of soft layer softness (thickness and anisotropy) on the coercivity and magnetization reversal mechanisms of ECC were studied. Results showed that both remanence ratio ( Mr/ Ms) and coercivity of the ECC films reduced with an increase in soft layer thickness. However, the rate of coercivity reduction reduced when soft layer anisotropy was increased simultaneously. This was confirmed by the following facts. For the ECC with Co soft layer, the magnetization reversal mechanism within the ECC grains changed from coherent rotation to domain wall motion when soft layer thickness was changed from 2 to 15 nm. The impact of soft layer thickness on the magnetization reversals of the ECC grains reduced with an increase in soft layer anisotropy. On the other hand, the change of soft layer easy axis direction could possibly change the reversal mechanism of the ECC grains. The above experimental results showed that the coercivity of ECC film was controlled by the reversal mechanism inside the ECC grains.

  13. Influence of Pt Doping on Gilbert Damping in Permalloy Films and Comparison with the Perpendicularly Magnetized Alloy Films

    NASA Astrophysics Data System (ADS)

    Mizukami, Shigemi; Kubota, Takahide; Zhang, Xianmin; Naganuma, Hiroshi; Oogane, Mikihiko; Ando, Yasuo; Miyazaki, Terunobu

    2011-10-01

    Effects of Pt doping on magnetic properties and Gilbert damping are investigated for Ni80Fe20 permalloy films to compare with damping in alloy films containing Pt with a large perpendicular anisotropy. Gilbert damping constant α and g-factor g for (Ni80Fe20)100-xPtx (x = 0-34 at. %) are evaluated from out-of-plane angular variations of ferromagnetic resonance (FMR) linewidth and resonance field with an analysis based on the Landau-Lifshitz-Gilbert equation. Data of angular dependence of the FMR linewidth are fitted reasonably well by a theoretical model without having to take into account any extrinsic influences on linewidth, thereby allowing us to determine precise values of α. The α values show variation with increasing Pt concentration rising by ˜0.06 at a Pt concentration of 34 at. %, which is very close to those in perpendicularly magnetized CoCrPt and FePt film reported recently. Nevertheless, Gilbert damping rate G for the Pt doped permalloy films is smaller than those in CoCrPt and FePt films. These experimental results are discussed with a spin-orbit torque theory.

  14. Preparation of Perpendicular GdFeCo Magnetic Thin Films with Pulse Electrodeposition Technique Utilizing Molten Salt as Electrolyte

    NASA Astrophysics Data System (ADS)

    Yang, Chao-Chen; Shu, Min-Fong

    2007-12-01

    We have utilized ZnCl2-dimethylsulfone (DMSO2) as the electrolyte with added GdCl3, FeCl2, and CoCl2, for electrodepositing a perpendicular GdFeCo magnetic thin film. The reaction at the electrode surface and the electrical conductivity of the ionic substance at different ionic concentrations were studied by cyclic voltammetry and a computerized direct current method. Moreover, the electrodeposition of the GdFeCo thin film was determined by a pulse potential method. Relation between the composition of the deposited thin film and control parameters including applied potentials was determined by EDS analysis. An amorphous structure and the thickness of the thin film were obtained by TEM analysis. Its roughness and uniformity were determined by AFM analysis. Meanwhile, a perpendicular magnetic property and pinning magnetic domain of the thin film were analyzed from results of AGM and MFM.

  15. Perpendicular magnetic recording: Playback

    NASA Astrophysics Data System (ADS)

    Litvinov, Dmitri; Khizroev, Sakhrat

    2005-04-01

    For the past several years, perpendicular magnetic recording has been under intense scrutiny as the primary alternative to magnetic data storage technologies in place today. Major system components, write heads and media in particular, have been the subject of extensive studies. Less attention, however, has been devoted to the playback processes in perpendicular recording systems. The playback heads used in technology demonstrations remain largely unchanged from their longitudinal recording counterparts. It is an open question whether the longitudinal playback-head design is optimal for perpendicular recording. For example, application of longitudinal playback heads in perpendicular recording leads to undesirable phenomena associated with modified playback response, increased flying height sensitivity, adjacent track interference, and calls for major modifications of the existing read channels. The subject of this work is a detailed discussion of the playback physics, in perpendicular recording systems; the focus being to establish the design guidelines for optimized perpendicular playback heads, which are equivalent or superior in their performance characteristics to conventional shielded readers used in longitudinal recording. Conformal mapping is applied to demonstrate the playback wave form equivalency between a shielded and dual-pole readers when applied in longitudinal and perpendicular recording, respectively. Utilizing extensive three-dimensional modeling and reciprocity principle to evaluate the performance of various playback-head configurations, it is demonstrated that differential reader configurations possess advantageous playback characteristics, such as higher playback amplitude, improved spatial resolution, and reduced dependence on flight-height variations as compared to conventional shielded readers. Modified design of differential readers with a single magnetoresistive sensor is proposed to overcome the manufacturability issues associated with a

  16. Correlation between static and dynamic magnetic properties of highly perpendicular magnetized C o49P t51 thin films

    NASA Astrophysics Data System (ADS)

    Saravanan, P.; Hsu, Jen-Hwa; Chérif, Salim Mourad; Roussigné, Yves; Belmeguenai, Mohamed; Stashkevich, Andrey; Vernier, Nicolas; Singh, Akhilesh Kr.; Chang, Ching-Ray

    2015-10-01

    The static and dynamic magnetic behavior of 5-nm-thick C o49P t51 films with strong perpendicular magnetic anisotropy (PMA) grown at different deposition temperatures (Td ,CoPt) was investigated using complementary techniques such as vibrating sample magnetometry (VSM), magneto-optical Kerr effect (MOKE) imaging, and Brillouin light scattering (BLS). Our previous study on these films demonstrated the evolution of phase transformation from an A 3 -disordered (hexagonal) to an L 11 -ordered (rhombohedral) structure against increasing Td ,CoPt from room temperature (RT) to 350°C. Along these lines, the changes in the domain configuration, magnetization reversal, and spin wave behavior of the 5-nm-thick CoPt films due to varying Td ,CoPt are emphasized in this study. The VSM out-of-plane hysteresis loops confirmed the existence of strong PMA for all the CoPt films, irrespective of Td ,CoPt. MOKE studies revealed that the films deposited at RT and at 150 ∘C containing hard and soft magnetic areas, while the films grown at higher Td ,CoPt, 250 and 350 ∘C , are more uniform and homogeneous. The MOKE findings are validated by the BLS spectra in terms of high and low frequency lines corresponding to the hard and soft magnetic areas, respectively. A suitable model is hypothesized to interpret the frequency variation of BLS modes corresponding to the easy saturated regions of the CoPt films. By this means, a good correlation between both static and dynamic behavior of the 5-nm-thick CoPt films has been established in this study.

  17. Magnetic Pinning in Nb and YBCO Thin Films by Co/Pt Multilayers with Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Cheng, X. M.; Zhu, L. Y.; Chien, C. L.; Cieplak, Marta Z.; Adamus, Z.; Abal'Oshev, A.; Berkowski, M.

    2006-03-01

    Magnetic pinning of vortices has the advantage over intrinsic pinning in that the superconducting critical current can be reversibly tuned by the magnetic field (H). Magnetic pinning by Co/Pt multilayers with perpendicular magnetic anisotropy has been studied in two ferromagnetic/superconducting bilayers of Nb and YBCO with different superconducting properties (e.g. penetration depth λ). Magnetic force microscopy reveals similar magnetization (M) reversal process in the two cases, both exhibiting a large density of narrow residual domains but with different domain width w at the final reversal stage. However, the magnetic pinning, revealed by the M-H loop shape in the superconducting state, is different. The Nb film exhibits an enhancement of M with the strongest effect during the final reversal stage, while the YBCO film shows a suppression of M in the vicinity of central M peak and an enhancement of M in large magnetic fields. These different behaviors are related to the different λ/w ratio in the two cases.

  18. Surface-termination-dependent magnetism and strong perpendicular magnetocrystalline anisotropy of an FeRh(001) thin film

    NASA Astrophysics Data System (ADS)

    Jekal, Soyoung; Rhim, S. H.; Hong, S. C.; Son, Won-joon; Shick, A. B.

    2015-08-01

    The magnetism of FeRh (001) films strongly depends on film thickness and surface terminations. While the magnetic ground state of bulk FeRh is G -type antiferromagnetism, the Rh-terminated films exhibit ferromagnetism with strong perpendicular magnetocrystalline anisotropy whose energy +2.1 meV/□ is two orders of magnitude greater than bulk 3 d conventional magnetic metals (□ is the area of a two-dimensional unit cell). While the Goodenough-Kanamori-Anderson rule on the superexchange interaction is crucial in determining the magnetic ground phases of FeRh bulk and thin films, the magnetic phases are the results of interplay and competition between three mechanisms—the superexchange interaction, the Zener-type direct interaction, and energy gain by Rh magnetization.

  19. Perpendicular Magnetic Anisotropy of Full-Heusler Films in Pt/Co2FeAl/MgO Trilayers

    NASA Astrophysics Data System (ADS)

    Li, Xiaoqi; Yin, Shaoqian; Liu, Yupeng; Zhang, Delin; Xu, Xiaoguang; Miao, Jun; Jiang, Yong

    2011-04-01

    We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable and the anisotropy energy density Ku is 1.3×106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 °C. The annealing temperature and Co2FeAl thickness greatly affect the PMA. Our results provide an effective way to realize relatively thick perpendicularly magnetized Heusler alloy films.

  20. Effect of aging and annealing on perpendicular magnetic anisotropy of ultra-thin CoPt films

    NASA Astrophysics Data System (ADS)

    Hara, R.; Hayakawa, K.; Ebata, K.; Sugita, R.

    2016-05-01

    The effect of aging and annealing on the magnetic properties of ultra-thin CoPt films with a Ru underlayer was investigated. For the 3 nm thick CoPt film aged in the air, the decrease of the saturation magnetic moment ms, the drastic increase of the perpendicular coercivity Hc⊥ and the perpendicular anisotropy were observed. This is because the surface layer of the CoPt film was oxidized and the bottom layer with high perpendicular anisotropy due to lattice distortion remained. For the annealed 3 nm thick CoPt film with a Pt protective layer, rising the annealing temperature Ta led to the decrease of ms, the decrease after increase of Hc⊥, and the decrease of the perpendicular squareness ratio S⊥ at Ta of 400 ∘C. The origins of effect of annealing were considered to be the grain boundary diffusion and the bulk diffusion of Ru and Pt into the CoPt film, and relaxation of the lattice distortion.

  1. Effect of the Acceleration Energy of Hydrogen Ion Irradiation on Perpendicular Magnetic Anisotropy in CoOx/Pd Multilayer Films

    NASA Astrophysics Data System (ADS)

    Shin, Sang Chul; Kim, Sanghoon; Han, Jungjin; Hong, Jongill; Kang, Shinill

    2011-11-01

    Magnetic stripes were achieved from hydrogen-ion-irradiated areas separated by the nonirradiated areas masked by UV-imprinted polymeric patterns. A perpendicular magnetic anistropy with a squareness of 0.96 and a coercivity of 2 kOe in (CoOx/Pd)10 multilayer films was induced via deoxidization, which heavily depended on the acceleration energy of hydrogen ion irradiation in the range of 400 eV. These phenomena were demonstrated via deoxidization of cobalt oxide to pure cobalt as observed by X-ray diffraction, accompanying the formation of a CoPd(111) phase indicating perpendicular magnetic anisotropy due to the preferential removal or reduction of oxygen atoms in multilayer films.

  2. Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films

    SciTech Connect

    Sinha, Jaivardhan; Gruber, Maria; Kodzuka, Masaya; Ohkubo, Tadakatsu; Mitani, Seiji; Hono, Kazuhiro; Hayashi, Masamitsu

    2015-01-28

    We have studied structural and magnetic properties of Ta|CoFeB|MgO heterostructures using cross-section transmission electron microscopy (TEM), electron energy loss spectrum (EELS) imaging, and vibrating sample magnetometry. From the TEM studies, the CoFeB layer is found to be predominantly amorphous for as deposited films, whereas small crystallites, diameter of ∼5 nm, are observed in films annealed at 300 °C. We find that the presence of such nanocrystallites is not sufficient for the occurrence of perpendicular magnetic anisotropy. Using EELS, we find that boron diffuses into the Ta underlayer upon annealing. The Ta underlayer thickness dependence of the magnetic anisotropy indicates that ∼0.2 nm of Ta underlayer is enough to absorb the boron from the CoFeB layer and induce perpendicular magnetic anisotropy. Boron diffusion upon annealing becomes limited when the CoFeB layer thickness is larger than ∼2 nm, which coincides with the thickness at which the saturation magnetization M{sub S} and the interface magnetic anisotropy K{sub I} drop by ∼20%. These results show the direct role which boron plays in determining the perpendicular magnetic anisotropy in CoFeB|MgO heterostructures.

  3. Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Sato, Noriyuki; White, Robert M.; Wang, Shan X.

    2016-04-01

    The effect of annealing on the exchange stiffness of ultrathin CoFeB films with perpendicular magnetic anisotropy was investigated through the observation of magnetic domain structures by magneto-optic Kerr-effect microscopy. A significant reduction of the exchange stiffness after an annealing process was observed, which is in striking contrast to a previous report that studied thick CoFeB films with in-plane magnetic anisotropy. Our results suggest that interdiffusion of non-magnetic atoms from the adjacent layer into CoFeB layer reduces the exchange stiffness, which explains the difference between the annealing effect on ultrathin and the thick CoFeB films. Thus, it is critical to prevent annealing-induced interdiffusion in order to suppress undesired sub-volume switching that degrades thermal stability of a free-layer in spin-transfer torque magnetic random access memory.

  4. Room-temperature perpendicular magnetic anisotropy of MgO/Fe/MgO ultrathin films

    SciTech Connect

    Kozioł-Rachwał, A.; Ślęzak, T.; Przewoźnik, J.; Skowroński, W.; Stobiecki, T.; Wilgocka-Ślęzak, D.; Qin, Q. H.; Dijken, S. van; Korecki, J.

    2013-12-14

    We used the anomalous Hall effect to study the magnetic properties of MgO/Fe(t)/MgO(001) structures in which the Fe thickness t ranged from 4 Å to 14 Å. For the iron deposited at 140 K, we obtained perpendicular magnetization at room temperature below the critical thickness of t{sub c} = (9 ± 1) Å. In the vicinity of t{sub c}, the easy magnetization axis switched from an out-of-plane orientation to an in-plane orientation, and the observed spin-reorientation transition was considered in terms of the competition among different anisotropies. The perpendicular magnetization direction was attributed to magnetoelastic anisotropy. Finally, the temperature-dependent spin-reorientation transition was analyzed for Fe thicknesses close to t{sub c}.

  5. Interfacial perpendicular magnetic anisotropy and damping parameter in ultra thin Co{sub 2}FeAl films

    SciTech Connect

    Cui, Yishen; Khodadadi, Behrouz; Schaefer, Sebastian; Mewes, Tim; Lu, Jiwei; Wolf, Stuart A.

    2013-04-22

    B2-ordered Co{sub 2}FeAl films were synthesized using an ion beam deposition tool. A high degree of chemical ordering {approx}81.2% with a low damping parameter ({alpha}) less than 0.004 was obtained in a 50 nm thick film via rapid thermal annealing at 600 Degree-Sign C. The perpendicular magnetic anisotropy (PMA) was optimized in ultra thin Co{sub 2}FeAl films annealed at 350 Degree-Sign C without an external magnetic field. The reduced thickness and annealing temperature to achieve PMA introduced extrinsic factors thus increasing {alpha} significantly. However, the observed damping of Co{sub 2}FeAl films was still lower than that of Co{sub 60}Fe{sub 20}B{sub 20} films prepared at the same thickness and annealing temperature.

  6. In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

    NASA Astrophysics Data System (ADS)

    Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wu, Hao; Wong, Kin L.; Zhang, Zongzhi; Han, Xiufeng; Khalili Amiri, Pedram; Wang, Kang L.

    2016-05-01

    We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

  7. The effects of tungsten concentration on crystalline structure and perpendicular magnetic anisotropy of Co-W films

    SciTech Connect

    Yin, S. Q.; Wu, Y.; Xu, X. G. Jiang, Y.; Wang, H.; Wang, J.P.

    2014-12-15

    In this study, Co-W thin films deposited by DC magnetron sputtering were demonstrated to be perpendicular magnetic anisotropic with large magnetocrystalline anisotropy energy (MAE). Thermodynamic calculations based on Miedema’s semi-empirical model have been used to estimate the phase in this binary alloy system. Based on the thermodynamic calculations results, a series of Co-W thin films were deposited on amorphous Ta underlayer with different tungsten concentrations. According to the X-ray diffraction results, the crystal structure of Co-W thin films is consistent well with that of thermodynamic calculations. Large MAE of Co-W thin films can be obtained with K{sub u} over 2.1 × 10{sup 5} J/m{sup 3} after vacuum annealing. The perpendicular coercivity (H{sub c}) of Co-W thin film reaches 9.1 × 10{sup 4} A/m. Therefore, the Co-W thin film is considered as a potential choice of high-density magnetic recording media materials.

  8. Domain-wall structure in thin films with perpendicular anisotropy: Magnetic force microscopy and polarized neutron reflectometry study

    NASA Astrophysics Data System (ADS)

    Navas, David; Redondo, Carolina; Badini Confalonieri, Giovanni A.; Batallan, Francisco; Devishvili, Anton; Iglesias-Freire, Óscar; Asenjo, Agustina; Ross, Caroline A.; Toperverg, Boris P.

    2014-08-01

    Ferromagnetic domain patterns and three-dimensional domain-wall configurations in thin CoCrPt films with perpendicular magnetic anisotropy were studied in detail by combining magnetic force microscopy and polarized neutron reflectometry with micromagnetic simulations. With the first method, lateral dimension of domains with alternative magnetization directions normal to the surface and separated by domain walls in 20-nm-thick CoCrPt films were determined in good agreement with micromagnetic simulations. Quantitative analysis of data on reflectometry shows that domain walls consist of a Bloch wall in the center of the thin film, which is gradually transformed into a pair of Néel caps at the surfaces. The width and in-depth thickness of the Bloch wall element, transition region, and Néel caps are found consistent with micromagnetic calculations. A complex structure of domain walls serves to compromise a competition between exchange interactions, keeping spins parallel, magnetic anisotropy orienting magnetization normal to the surface, and demagnetizing fields, promoting in-plane magnetization. It is shown that the result of such competition strongly depends on the film thickness, and in the thinner CoCrPt film (10 nm thick), simple Bloch walls separate domains. Their lateral dimensions estimated from neutron scattering experiments agree with micromagnetic simulations.

  9. Annealing effects on the properties of amorphous CoSiB/Pt multilayer films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Jung, Sol; Park, Jisun; Yim, Haein; Kim, Taewan

    2014-01-01

    The perpendicular magnetic anisotropy (PMA) of amorphous CoSiB/Pt multilayer systems was studied as a function of the thickness of the CoSiB/Pt bilayer and the number of repeated CoSiB/Pt bilayers. In this letter, we investigate the thermal property of a CoSiB single layer film annealed at 150 ˜ 350 °C for 3 hours and the perpendicular magnetic anisotropic property of amorphous ferromagnetic Ta(50 °A)/Pt(30 °A)/[CoSiB(2, 3, 4, 5, 6 Å)/Pt(14 Å)]5/Ta(50 Å) multilayer films annealed at 200 ˜ 400 °C for 3 hours. The thermal properties were measured by using a differential scanning calorimeter and an X-ray diffractometer, and the magnetic properties were measured by using a vibrating sample magnetometer. The PMA of the CoSiB/Pt multilayer film disappeared and the multilayer film show isotropy after annealing at a temperature of 350 °C or above.

  10. Creep and Flow Regimes of Magnetic Domain-Wall Motion in Ultrathin Pt/Co/Pt Films with Perpendicular Anisotropy

    NASA Astrophysics Data System (ADS)

    Metaxas, P. J.; Jamet, J. P.; Mougin, A.; Cormier, M.; Ferré, J.; Baltz, V.; Rodmacq, B.; Dieny, B.; Stamps, R. L.

    2007-11-01

    We report on magnetic domain-wall velocity measurements in ultrathin Pt/Co(0.5 0.8nm)/Pt films with perpendicular anisotropy over a large range of applied magnetic fields. The complete velocity-field characteristics are obtained, enabling an examination of the transition between thermally activated creep and viscous flow: motion regimes predicted from general theories for driven elastic interfaces in weakly disordered media. The dissipation limited flow regime is found to be consistent with precessional domain-wall motion, analysis of which yields values for the damping parameter, α.

  11. FePtCu alloy thin films: Morphology, L1{sub 0} chemical ordering, and perpendicular magnetic anisotropy

    SciTech Connect

    Brombacher, C.; Schletter, H.; Daniel, M.; Matthes, P.; Joehrmann, N.; Makarov, D.; Hietschold, M.; Albrecht, M.; Maret, M.

    2012-10-01

    Rapid thermal annealing was applied to transform sputter-deposited Fe{sub 51}Pt{sub 49}/Cu bilayers into L1{sub 0} chemically ordered ternary (Fe{sub 51}Pt{sub 49}){sub 100-x}Cu{sub x} alloys with (001) texture on amorphous SiO{sub 2}/Si substrates. It was found that for thin film samples, which were processed at 600 Degree-Sign C for 30 s, the addition of Cu strongly favors the L1{sub 0} ordering and (001) texture formation. Furthermore, it could be revealed by transmission electron microscopy and electron backscatter diffraction that the observed reduction of the ordering temperature with Cu content is accompanied by an increased amount of nucleation sites forming L1{sub 0} ordered grains. The change of the structural properties with Cu content and annealing temperature is closely related to the magnetic properties. While an annealing temperature of 800 Degree-Sign C induces strong perpendicular magnetic anisotropy (PMA) in binary Fe{sub 51}Pt{sub 49} films, the addition of Cu systematically reduces the PMA. However, due to the enhancement of both the A1-L1{sub 0} phase transformation and the development of the (001) texture with increasing Cu content, lowering of the annealing temperature leads to a shift of the maximum perpendicular magnetic anisotropy towards alloys with higher Cu content. Thus, for an annealing temperature of 600 Degree-Sign C, the highest perpendicular magnetic anisotropy energy is found for the (Fe{sub 51}Pt{sub 49}){sub 91}Cu{sub 9} alloy. The smooth surface morphology, adjustable PMA, and high degree of intergranular exchange coupling make these films suitable for post-processing required for specific applications such as for sensorics or magnetic data storage.

  12. Large anisotropic Fe orbital moments in perpendicularly magnetized Co2FeAl Heusler alloy thin films revealed by angular-dependent x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Okabayashi, Jun; Sukegawa, Hiroaki; Wen, Zhenchao; Inomata, Koichiro; Mitani, Seiji

    2013-09-01

    Perpendicular magnetic anisotropy (PMA) in Heusler alloy Co2FeAl thin films sharing an interface with a MgO layer is investigated by angular-dependent x-ray magnetic circular dichroism. Orbital and spin magnetic moments are deduced separately for Fe and Co 3d electrons. In addition, the PMA energies are estimated using the orbital magnetic moments parallel and perpendicular to the film surfaces. We found that PMA in Co2FeAl is determined mainly by the contribution of Fe atoms with large orbital magnetic moments, which are enhanced at the interface between Co2FeAl and MgO. Furthermore, element specific magnetization curves of Fe and Co are found to be similar, suggesting the existence of ferromagnetic coupling between Fe and Co PMA directions.

  13. Laser heating and oxygen partial pressure effects on the dynamic magnetic properties of perpendicular CoFeAlO films

    NASA Astrophysics Data System (ADS)

    Wu, Di; Li, Wei; Tang, Minghong; Zhang, Zongzhi; Lou, Shitao; Jin, Q. Y.

    2016-07-01

    The impact of oxidation and laser heating on the dynamic magnetic properties of perpendicularly magnetized Co50Fe25Al25O films has been studied by time-resolved magneto-optical Kerr effect in a fs-laser pump-probe setup. We find that pump laser fluence Fp can affect the effective magnetic anisotropy field and thus the precession frequency f seriously, leading to an increased dependence of effective magnetic damping factor αeff on the external field at higher fluences. Moreover, the αeff increases with increasing the oxygen partial pressure PO2 while the uniaxial anisotropy energy Ku and Landau factor g decrease, owing to the increased proportion of superparamagnetic CoFe oxides formed by over-oxidation. By optimizing both the Fp and PO2, the intrinsic damping factor is determined to be lower than 0.028 for the perpendicular film showing a uniaxial anisotropy energy as high as 4.3×106 erg/cm3. The results in this study provide a promising approach to manipulate the magnetic parameters for possible applications in spintronic devices.

  14. Strain-induced perpendicular magnetic anisotropy in L a2CoMn O6 -ɛ thin films and its dependence on film thickness

    NASA Astrophysics Data System (ADS)

    Galceran, Regina; López-Mir, Laura; Bozzo, Bernat; Cisneros-Fernández, José; Santiso, José; Balcells, Lluís; Frontera, Carlos; Martínez, Benjamín

    2016-04-01

    Ferromagnetic insulating L a2CoMn O6 -ɛ (LCMO) epitaxial thin films grown on top of SrTi O3 (001) substrates present a strong magnetic anisotropy favoring the out-of-plane (OP) orientation of the magnetization with a large anisotropy field (˜70 kOe for film thickness of about 15 nm). Diminishing oxygen off-stoichiometry of the film enhances the anisotropy. We attribute this to the concomitant shrinkage of the OP cell parameter and to the increasing of the tensile strain of the films. Consistently, LCMO films grown on (LaAlO3)0.3(Sr2AlTaO6) 0.7 and LaAl O3 substrates (with a larger OP lattice parameter and compressive stress) display in-plane (IP) magnetic anisotropy. Thus, we link the strong magnetic anisotropy observed in LCMO to the film stress: tensile strain favors perpendicular anisotropy, and compressive stress favors IP anisotropy. We also report on the thickness dependence of the magnetic properties. Perpendicular anisotropy, saturation magnetization, and Curie temperature are maintained over a large range of film thickness.

  15. Tunable magnetic anisotropy in perpendicular exchange-coupled CoFeB/(Co/Pt) films

    NASA Astrophysics Data System (ADS)

    You, Long; Lee, Oukjae; Glenn, Terrell; Abdel-Raziq, Haron; Salahuddin, Sayeef

    2015-03-01

    Spintronic materials with strong perpendicular magnetic anisotropy (PMA), such as Co/Pd, Co/Pt and Co/Ni multilayers, have been introduced to improve the functional performance of STT devices (e.g. enhanced thermal stability, scalability and switching speeds of spin memory/logic). Furthermore, by coupling magnetic layers with PMA and longitudinal magnetic anisotropy (LMA), added benefits such as a variable magnetization tilt angle and tunable damping have been shown. In our study, we discuss how to precise control the anisotropy tilt angle by coupling the PMA hard layer (Co/Pt) with an in-plane soft layer (IMA, CoFeB). Due to the competition between the PMA and IMA, the tilted angle can be tuned by varying thickness of IMA. The stack of Pt(5nm)/Co (1nm)/CoFeB(Xnm)/MgO (2nm) (x varied from 0 to 1nm) was deposited by magneto-sputtering system. The magnetic properties were investigated by vibrating sample magnetometer and anomalous Hall effect . The electric transport of microscale devices comprised of that stack were also studied by our probe station with electromagnet. The experiments show the magnetic anisotropy can be tuned well by changing thickness of in plane layer and open a promising new avenue to next generation spintronics devices.

  16. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

    SciTech Connect

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Jung, M. H.; Yoon, J. B.; Cho, J. H.; You, C.-Y.

    2015-05-07

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.

  17. Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]N thin films

    NASA Astrophysics Data System (ADS)

    Kim, T. W.; Choi, Y. H.; Lee, K. J.; Yoon, J. B.; Cho, J. H.; You, C.-Y.; Jung, M. H.

    2015-05-01

    Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]N multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]N demonstrate possible potential as a free layer for PMA-based memory devices.

  18. Laser-Induced Fast Magnetization Precession and Gilbert Damping for CoCrPt Alloy Thin Films with Perpendicular Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Mizukami, Shigemi; Watanabe, Daisuke; Kubota, Takahide; Zhang, Xianmin; Naganuma, Hiroshi; Oogane, Mikihiko; Ando, Yasuo; Miyazaki, Terunobu

    2010-12-01

    We have investigated magnetic field strength (up to 10 kOe) and angle dependences of spin dynamics in 4-nm-thick films of CoCrPt alloys with perpendicular magnetic anisotropy using the all-optical time-resolved magneto-optical Kerr effect (TRMOKE). The comprehensive TRMOKE measurements have indicated the Gilbert damping constant α of 0.05 for the alloy film with low coercivity. The experiments also indicated that α values for the alloy films deposited at higher temperatures with higher coercivities were also no greater than 0.06.

  19. Study of intergranular exchange coupling in longitudinal CoCrPt and perpendicular CoNi/Pt thin films for magnetic recording

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Lee, Hwan-Soo; Peng, Jie-Gang; Zhong, Zhi-Yong; Zu, Xiao-Tao

    2008-10-01

    We investigated magnetic intergranular coupling in both longitudinal and perpendicular media, suitable for high-density recording. The longitudinal media were two kinds of CoCrPt thin films with one strongly and the other weakly coupled. The perpendicular media were two kinds of CoNi/Pt multilayered thin films with one strongly and the other weakly coupled. The dc saturated and demagnetized magnetic states of thin films were studied by magnetic force microscopy. The demagnetized state of strongly coupled media shows greater contrast than that of granular ones for both CoNi/Pt and CoCrPt. In the dc saturated states, CoNi/Pt shows uniform distribution of the magnetization, while CoCrPt shows distinct remanent magnetization, which is smaller than saturation magnetization. A recording demonstration shows that the perpendicular medium is advantageous over the longitudinal one, and the weakly coupled medium outweighs the strongly coupled one for high-density recording.

  20. Magnetization reversal of giant perpendicular magnetic anisotropy at the magnetic-phase transition in FeRh films on MgO

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-02-01

    Based on first-principles calculations, we demonstrate that substitutions of transition metals Ru and Ir, neighboring and same group elements in the periodic table, for the Rh site in the vicinity of surface can induce a substantially large perpendicular magnetic anisotropy (PMA), up to an order of magnitude of 20 erg /cm2 , in FeRh films on MgO. The main driving mechanism for this huge PMA is the interplay between the dx y and dx2-y2 orbital states of the substitutional 4 d and 5 d transition metal atoms with large spin-orbit coupling. Further investigations demonstrate that magnetization direction of PMA undergoes a transition into an in-plane magnetization at the antiferromagnet → ferromagnet phase transition, which provides a viable route for achieving large and switchable PMA associated with the magnetic-phase transition in antiferromagnet spintronics.

  1. Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit

    NASA Astrophysics Data System (ADS)

    Mandru, Andrada-Oana; Corbett, Joseph P.; Lucy, Jeremy M.; Richard, Andrea L.; Yang, Fengyuan; Ingram, David C.; Smith, Arthur R.

    2016-03-01

    We report structural, surface, and magnetic investigations of ferromagnetic Ga-rich MnGa thin and ultra-thin films grown on semiconducting GaN(0001) using molecular beam epitaxy. The Mn:Ga composition ratio is varied from ≈1 (stoichiometric) to ≈0.42 (very Ga-rich) for different samples. We find that the L10 MnGa phase is preserved down to a Mn:Ga ratio of ≈0.81. As the Ga concentration increases, we observe the coexistence of more Ga-rich phases, namely Mn3Ga5 and Mn2Ga5. Room temperature scanning tunneling microscopy imaging reveals highly epitaxial films, with atomically smooth and highly reconstructed surfaces. Magnetic characterizations show how the magnetic properties evolve with changing composition and that giant perpendicular magnetic anisotropy is induced by reducing the size of our films.

  2. Polarized neutron reflectivity study of perpendicular magnetic anisotropy in MgO/CoFeB/W thin films

    NASA Astrophysics Data System (ADS)

    Ambaye, Haile; Zhan, Xiao; Li, Shufa; Lauter, Valeria; Zhu, Tao

    In this work we study the origin of PMA in MgO/CoFeB/W trilayer systems using polarized neutron reflectivity. Recently, the spin Hall effect in the heavy metals, such as Pt and Ta, has been of significant interest for highly efficient magnetization switching of the ultrathin ferromagnets sandwiched by such a heavy metal and an oxide, which can be used for spintronic based memory and logic devices. Most work has focused on heavy-metal/ferromagnet/oxide trilayer (HM/FM/MO) structures with perpendicular magnetic anisotropy (PMA), where the oxide layer plays the role of breaking inversion symmetry .No PMA was found in W/CoFeB/MgO films. An insertion of Hf layer in between the W and CoFeB layers, however, has been found to create a strong PMA. Roughness and formation of interface alloys by interdiffusion influences the extent of PMA. We intend to identify these influences using the depth sensitive technique of PNR. In our previous study, we have successfully performed polarized neutron reflectometry (PNR) measurements on the Ta/CoFeB/MgO/CoFeB/Ta thin film with MgO thickness of 1 nm. The PNR measurements were carried out using the BL-4A Magnetic Reflectometer at SNS. This work has been supported by National Basic Research Program of China (2012CB933102). Research at SNS was supported by the Office of BES, DOE.

  3. Perpendicular magnetic anisotropy in ultrathin Co|Ni multilayer films studied with ferromagnetic resonance and magnetic x-ray microspectroscopy

    NASA Astrophysics Data System (ADS)

    Macià, F.; Warnicke, P.; Bedau, D.; Im, M.-Y.; Fischer, P.; Arena, D. A.; Kent, A. D.

    2012-11-01

    Ferromagnetic resonance (FMR) spectroscopy, x-ray magnetic circular dichroism (XMCD) spectroscopy and magnetic transmission soft x-ray microscopy (MTXM) experiments have been performed to gain insight into the magnetic anisotropy and domain structure of ultrathin Co|Ni multilayer films with a thin permalloy layer underneath. MTXM images with a spatial resolution better than 25 nm were obtained at the Co L3 edge down to an equivalent thickness of Co of only 1 nm, which establishes a new lower boundary on the sensitivity limit of MTXM. Domain sizes are shown to be strong functions of the anisotropy and thickness of the film.

  4. Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films.

    PubMed

    Liu, Yiwei; Zhang, Jingyan; Wang, Shouguo; Jiang, Shaolong; Liu, Qianqian; Li, Xujing; Wu, Zhenglong; Yu, Guanghua

    2015-12-01

    The high oxygen storage/release capability of the catalyst Ru is used to manipulate the interfacial electronic structure in spintronic materials to obtain perpendicular magnetic anisotropy (PMA). Insertion of an ultrathin Ru layer between the CoFeB and Ta layers in MgO/CoFeB/Ta/MgO films effectively induces PMA without annealing. Ru plays a catalytic role in Fe-O-Ta bonding and isolation at the metal-oxide interface to achieve moderate interface oxidation. In contrast, PMA cannot be obtained in the sample with a Mg insertion layer or without an insertion layer because of the lack of a catalyst. Our work would provide a new approach toward catalyst-induced PMA for future CoFeB-based spintronic device applications. PMID:26565747

  5. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film

    PubMed Central

    Shirsath, Sagar E.; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-01-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

  6. Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film.

    PubMed

    Shirsath, Sagar E; Liu, Xiaoxi; Yasukawa, Yukiko; Li, Sean; Morisako, Akimitsu

    2016-01-01

    Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate. PMID:27435010

  7. Interfacial contributions to perpendicular magnetic anisotropy in Pd/Co2MnSi/MgO trilayer films

    NASA Astrophysics Data System (ADS)

    Fu, Huarui; You, Caiyin; Li, Yunlong; Wang, Ke; Tian, Na

    2016-05-01

    Heusler alloy Co2MnSi is widely selected as the ferromagnetic layer to achieve a giant tunneling magnetic resistance (TMR). It is also one of the most promising materials for potential spintronic applications of magnetic random access memory (MRAM) due to the high spin polarization, in which the configuration of perpendicular magnetic anisotropy (PMA) possesses great advantages over the in-plane ones. Therefore, it is highly desirable to investigate the PMA effects of the Co2MnSi layer with a suitable stack structure. In this work, a strong PMA (1.61  ×  106 erg cm‑3) is demonstrated in the system of Pd/Co2MnSi/MgO trilayer films. The contributions of the interfaces beside the ferromagnetic Co2MnSi layer were quantitatively clarified. The interfacial anisotropy K s,MgO of 0.79 erg cm‑2 at the Co2MnSi/MgO interface is larger than the K s,Pd value of 0.26 erg cm‑2 at the Pd/Co2MnSi interface. Due to the dual interfacial effects, the strong PMA can be sustained at the high annealing temperature with a thick Co2MnSi layer of about 4.9 nm, which is favorable to the potential spintronic application. The Mn–O bonding was also found to be enriched at the Co2MnSi/MgO interface for the annealed Pd/Co2MnSi (3.4 nm)/MgO film with the large PMA, showing an experimental evidence for the theoretical results of the Mn–O bonding contribution to PMA.

  8. Perpendicular magnetic anisotropy in CoxMn4-xN (x = 0 and 0.2) epitaxial films and possibility of tetragonal Mn4N phase

    NASA Astrophysics Data System (ADS)

    Ito, Keita; Yasutomi, Yoko; Kabara, Kazuki; Gushi, Toshiki; Higashikozono, Soma; Toko, Kaoru; Tsunoda, Masakiyo; Suemasu, Takashi

    2016-05-01

    We grow 25-nm-thick Mn4N and Co0.2Mn3.8N epitaxial films on SrTiO3(001) by molecular beam epitaxy. These films show the tetragonal structure with a tetragonal axial ratio c/a of approximately 0.99. Their magnetic properties are measured at 300 K, and perpendicular magnetic anisotropy is confirmed in both films. There is a tendency that as the Co composition increases, an anisotropy field increases, whereas saturation magnetization and uniaxial magnetic anisotropy energy decrease. First-principles calculation predicts the existence of tetragonal Mn4N phase. This explains the c/a ˜ 0.99 in the Mn4N films regardless of their film thickness and lattice mismatch with substrates used.

  9. Neutrons to probe nanoscale magnetism in perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Venkataramana, Vikash

    A perpendicular magnetic medium is a multi-layered magnetic thin film structure with the topmost layer comprising nanoscale magnetic grains of high perpendicular anisotropy. The reported work investigates the structural and magnetic properties of the magnetic grains and multi-layers in the perpendicular magnetic medium using polarised neutron scattering and reflectivity techniques. The work investigates the structural and magnetic properties of the CoCrPt grains, apart from understanding the CoCrPt magnetic grain switching. The work also investigates the magnetisation in the layers of the thin film perpendicular media structure using polarised neutron reflectivity (PNR). Using polarised small angle neutron scattering (PolSANS) shows that ferromagnetic ordered core region of the CoCrPt grain in the recording layer is smaller than the physical CoCrPt granular structure. The magnetic switching behaviour of the CoCrPt grain at different magnetic fields is also analysed and the experimental PolSANS data is fitted with non-interacting size-dependent analytical grain switching models. This result provides significant evidence that the magnetic anisotropy increases with grain size, with larger magnetic grains having larger magnetic anisotropy. Polarised neutron scattering experiments are carried out with the magnetically softer exchange coupled composite (ECC) layer included in the thin film magnetic structure.. The first experiments investigate if the ECC layer contributes to the nuclear and magnetic interference scattering term in the experimenting scattering data. The experiments clearly show that there is no contribution from the ECC layer in the nuclear and magnetic scattering interference term. The role of the ECC layer in the magnetic switching process is then investigated at different magnetic fields. Polarised neutron reflectivity (PNR) experiments have also been carried out with the ECC layer on the perpendicular magnetic media samples. These experiments

  10. Consequences of an interface-concentrated perpendicular magnetic anisotropy in ultrathin CoFeB films used in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Sun, J. Z.

    2015-05-01

    We examine the consequences of a strongly interface-concentrated perpendicular magnetic anisotropy (PMA) energy in CoFeB thin films currently in wide use in magnetic tunnel junctions (MTJs) for spin-torque-related memory applications. The direct consequence of such an anisotropy energy distribution, in combination with a moderate exchange coupling of the interface moment to the rest of the film, is a phenomenological appearance of a fourth-order anisotropy term as the film is viewed by ferromagnetic resonance. The presence of a fourth-order anisotropy also affects the apparent thermal activation energy of a patterned nanomagnet with such thin films, and it could lead to an apparent increase in the spin-torque switching efficiency as represented by the ratio of the thermal activation energy and the threshold switching current. However, for interface-sensitive quantities such as tunnel magnetoresistance's hard-axis behavior, as well as for spin-torque excitation processes, the specifics of such separation of interface versus film-interior moment rotation could become important.

  11. Perpendicular magnetic anisotropy of Mn{sub 4}N films on MgO(001) and SrTiO{sub 3}(001) substrates

    SciTech Connect

    Yasutomi, Yoko; Ito, Keita; Sanai, Tatsunori; Toko, Kaoru; Suemasu, Takashi

    2014-05-07

    We grew Mn{sub 4}N epitaxial thin films capped with Au layers on MgO(001) and SrTiO{sub 3}(001) substrates by molecular beam epitaxy. Perpendicular magnetic anisotropy (PMA) was confirmed in all the samples at room temperature from the magnetization versus magnetic field curves using superconducting quantum interference device magnetometer. From the ω-2θ x-ray diffraction (XRD) and ϕ-2θ{sub χ} XRD patterns, the ratios of perpendicular lattice constant c to in-plane lattice constant a, c/a, were found to be about 0.99 for all the samples. These results imply that PMA is attributed to the in-plane tensile strain in the Mn{sub 4}N films.

  12. Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO{sub 3}:CoFe{sub 2}O{sub 4} vertically aligned nanocomposite thin films

    SciTech Connect

    Zhang, Wenrui; Jiao, Liang; Li, Leigang; Jian, Jie; Khatkhatay, Fauzia; Chu, Frank; Chen, Aiping; Jia, Quanxi; MacManus-Driscoll, Judith L.; Wang, Haiyan

    2014-02-10

    Self-assembled BiFeO{sub 3}:CoFe{sub 2}O{sub 4} (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO{sub 3} (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.

  13. Local modifications of magnetism and structure in FePt (001) epitaxial thin films by focused ion beam: Two-dimensional perpendicular patterns

    SciTech Connect

    Albertini, F.; Nasi, L.; Casoli, F.; Fabbrici, S.; Valeri, S.; Contri, S. F.

    2008-09-01

    Focused ion beam was utilized to locally modify magnetism and structure of L1{sub 0} FePt perpendicular thin films. As a first step, we have performed a magnetic, morphological, and structural study of completely irradiated FePt films with different Ga{sup +} doses (1x10{sup 13} -4x10{sup 16} ions/cm{sup 2}) and ion beam energy of 30 keV. For doses of 1x10{sup 14} ions/cm{sup 2} and above a complete transition from the ordered L1{sub 0} to the disordered A1 phase was found to occur, resulting in a drop of magnetic anisotropy and in the consequent moment reorientation from out-of-plane to in-plane. The lowest effective dose in disordering the structure (1x10{sup 14} ions/cm{sup 2}) was found not to affect the film morphology. Taking advantage of these results, continuous two-dimensional (2D) patterns of perpendicular magnetic structures (250 nm dots, 1 {mu}m dots, 1 {mu}m-large stripes) were produced by focused ion beam without affecting the morphology. The 2D patterns were revealed by means of magnetic force microscopy, that evidenced peculiar domain structures in the case of 1 {mu}m dots.

  14. Interactions controlled evolution of complex magnetoresistance in as-deposited Ag100-xCox nanogranular films with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2015-11-01

    Evolution of a complex magnetoresistance and dc-magnetization behavior of as-deposited co-sputtered Ag100-xCox films with the variation of cobalt concentration 'x' from 25.2 to 45.1 at% is presented. At 20 K, a transition from normal to complex magnetoresistance behavior, in conjunction with magnetic force microscopy evidence of the existence of a magnetic microstructure resulting in perpendicular magnetic anisotropy (PMA) is observed for x=32.6 cobalt concentration film. The dc-magnetization studies provide additional support to the presence of PMA in film that gets reduced with the increase of cobalt concentration. The complex magnetoresistance (MR) behavior also decreases with the increase of 'x'. The room temperature MR, coercivity behavior and remanence to saturation magnetization ratio indicate the presence of direct ferromagnetic interactions due to the presence of ferromagnetic particles for x≥32.6 films. The observed complex MR behavior and presence of PMA are interpreted in terms of manifestation of the transition of interparticle magnetic interaction nature from dipolar to direct ferromagnetic.

  15. Effect of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction on the enhancement of domain wall creep velocity in Pt/Co thin films by piezoelectric strain

    NASA Astrophysics Data System (ADS)

    Shepley, Philippa M.; Burnell, Gavin; Moore, Thomas A.

    We investigate piezoelectric strain control of domain wall creep motion in perpendicularly magnetized Pt/Co thin films. Domain wall (DW) motion has potential applications in data storage and spintronics, where the use of voltages rather than magnetic fields to control magnetization reversal could reduce power consumption. Materials with perpendicular magnetic anisotropy (PMA) are of particular interest due to their narrow domain walls and potential for efficient current-induced DW motion. Sputtered Ta/Pt/Co(t)/X films (t=0.78-1.0nm, X= Pt, Ir/Pt or Ir) on thin glass substrates were bonded to biaxial piezoelectric transducers, to which 150V was applied to produce a tensile out-of-plane strain of 9x10-4. This reduced the PMA by 10kJ/m3 and increased the DW creep velocity by up to 90%. DW energy can be calculated from the PMA and the Dzyaloshinskii-Moriya interaction (DMI) field. DW creep measurements of DMI field found no change with strain. The change in DW velocity with strain is linear with the change in DW energy for Pt/Co DWs with a mixed Bloch-Neel structure. Pt/Co/Pt films with higher DW velocity changes were found to have purely Bloch DWs. We conclude that the velocity of Bloch DWs is more sensitive to strain-induced changes than that of Bloch-Neel DWs. funded by EPSRC.

  16. Enhancement of order degree and perpendicular magnetic anisotropy of L10 ordered Fe(Pt,Pd) alloy film by introducing a thin MgO cap-layer

    NASA Astrophysics Data System (ADS)

    Noguchi, Youhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2016-07-01

    Fe50PtxPd50-x (at%, x=0-50) alloy films of 10 nm thickness with and without 2-nm-thick MgO cap-layers are prepared on MgO(001) single-crystal substrates by employing a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The influences of MgO cap-layer on the structure and the magnetic properties are investigated. Fe50PtxPd50-x films epitaxially grow on the substrates at 200 °C. The Fe50Pd50 and the Fe50Pt12.5Pd37.5 films are respectively composed of (001) single-crystals with disordered fcc-based (A1) and bcc-based (A2) structures. The films with x>25 consist of mixtures of A1 and A2 crystals. The volume ratio of A2 to A1 crystal decreases with increasing the x value from 25 to 50. The in-plane and out-of-plane lattices are respectively expanded and shrunk due to accommodation of lattice mismatch between film and substrate. When the films are annealed at 600 °C, phase transformation to L10 ordered phase takes place. L10 phase transformation of Fe50PtxPd50-x film is promoted for a sample with MgO cap-layer and the order degree is higher than that without cap-layer. Furthermore, L10 ordering with the c-axis perpendicular to the substrate surface is enhanced for the film with cap-layer. The cap-layer is considered to be giving a tension stress to the magnetic film in lateral direction which promotes L10 ordering with the c-axis perpendicular to the substrate. Deposition of cap-layer is shown effective in achieving higher order degree and in enhancing perpendicular magnetic anisotropy with Fe(Pt,Pd) films.

  17. Periodic magnetic domain wall pinning in an ultrathin film with perpendicular anisotropy generated by the stray magnetic field of a ferromagnetic nanodot array

    NASA Astrophysics Data System (ADS)

    Metaxas, P. J.; Zermatten, P.-J.; Jamet, J.-P.; Ferré, J.; Gaudin, G.; Rodmacq, B.; Schuhl, A.; Stamps, R. L.

    2009-03-01

    The stray magnetic field of an array of hard ferromagnetic perpendicularly magnetized [Co/Pt]4 nanodots is used to nondestructively generate a periodic pinning potential for domain walls in an underlying [Pt/Co]2/Pt layer with perpendicular anisotropy. Pinning is evidenced using magneto-optical microscopy. The magnetic field (H) dependence of the average wall velocity in the presence of the periodic pinning potential is consistent with thermally activated creep, modified only by the addition of a uniform retarding field Hret, whose magnitude depends on the relative alignment of H and the dots' magnetizations.

  18. Underlayer Effect on Perpendicular Magnetic Anisotropy in Co20Fe60B20\\MgO Films

    PubMed Central

    Chen, P.J.; Iunin, Y.L.; Cheng, S.F.; Shull, R.D.

    2016-01-01

    Perpendicular Magnetic Tunneling Junctions (pMTJs) with Ta\\CoFeB\\MgO have been extensively studied in recent years. However, the effects of the underlayer on the formation of the CoFeB perpendicular magnetic anisotropy (PMA) are still not well understood. Here we report the results of our systematic use of a wide range of elements (Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt and Au) encompassed by columns IVA, VA, VIA, VIIA and VIIIA of the periodic table as the underlayer in a underlayer\\Co20Fe60B20\\MgO stack. Our goals were to survey more elements which could conceivably create a PMA in CoFeB and thereby to explore the mechanisms enabling these underlayers to enhance or create the PMA. We found underlayer elements having both an outer shell of 4d electrons (Zr, Nb Mo, and Pd) and 5d electrons (Hf, Ta, W, Re, Ir, and Pt) resulted in the development of a PMA in the MgO-capped Co20Fe60B20. Hybridization between the 3d electrons of the Fe or Co (in the Co20Fe60B20) at the interface with the 4d or 5d electrons of the underlayer is thought to be the cause of the PMA development. PMID:27499549

  19. Perpendicular reading of single confined magnetic skyrmions

    PubMed Central

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    2015-01-01

    Thin-film sub-5 nm magnetic skyrmions constitute an ultimate scaling alternative for future digital data storage. Skyrmions are robust noncollinear spin textures that can be moved and manipulated by small electrical currents. Here we show here a technique to detect isolated nanoskyrmions with a current perpendicular-to-plane geometry, which has immediate implications for device concepts. We explore the physics behind such a mechanism by studying the atomistic electronic structure of the magnetic quasiparticles. We investigate from first principles how the isolated skyrmion local-density-of-states which tunnels into the vacuum, when compared with the ferromagnetic background, is modified by the site-dependent spin mixing of electronic states with different relative canting angles. Local transport properties are sensitive to this effect, as we report an atomistic conductance anisotropy of up to ∼20% for magnetic skyrmions in Pd/Fe/Ir(111) thin films. In single skyrmions, engineering this spin-mixing magnetoresistance could possibly be incorporated in future magnetic storage technologies. PMID:26471957

  20. Perpendicular reading of single confined magnetic skyrmions

    NASA Astrophysics Data System (ADS)

    Crum, Dax M.; Bouhassoune, Mohammed; Bouaziz, Juba; Schweflinghaus, Benedikt; Blügel, Stefan; Lounis, Samir

    2015-10-01

    Thin-film sub-5 nm magnetic skyrmions constitute an ultimate scaling alternative for future digital data storage. Skyrmions are robust noncollinear spin textures that can be moved and manipulated by small electrical currents. Here we show here a technique to detect isolated nanoskyrmions with a current perpendicular-to-plane geometry, which has immediate implications for device concepts. We explore the physics behind such a mechanism by studying the atomistic electronic structure of the magnetic quasiparticles. We investigate from first principles how the isolated skyrmion local-density-of-states which tunnels into the vacuum, when compared with the ferromagnetic background, is modified by the site-dependent spin mixing of electronic states with different relative canting angles. Local transport properties are sensitive to this effect, as we report an atomistic conductance anisotropy of up to ~20% for magnetic skyrmions in Pd/Fe/Ir(111) thin films. In single skyrmions, engineering this spin-mixing magnetoresistance could possibly be incorporated in future magnetic storage technologies.

  1. Evaluation of intergranular exchange coupling and magnetic domain size in CoCrPt-SiOX thin films with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Papusoi, C.; Desai, M.; Acharya, R.

    2015-06-01

    A method to evaluate the intergranular exchange coupling constant JEX in thin films with perpendicular anisotropy, based on first order reversal curve (FORC) diagrams, is proposed. For a 7.5 nm thick CoCrPt-SiOx magnetic (MAG) layer, JEX can be decreased from 1.1 to 0.26 erg cm-2 by using an adjacent CoCr-TiOx layer (isolation enhancement layer or IEL), enabling its application for high-density magnetic recording. The minimum value of JEX is attained for an IEL thickness of ~1.5 nm, which is low enough to preserve the HCP crystallographic structure of the MAG layer, with the c-axis perpendicular to film plane. The extracted values of JEX are used to evaluate the magnetic domain size of MAG layer using the checkerboard and the stripe domain models. Magnetic force microscopy observations indicate that domain size approaches the value predicted by the checkerboard model when JEX ≈ 0.8 erg cm-2, while for JEX > 0.8 erg cm-2 the actual domain size lies between the values indicated by the two models.

  2. Influence of inserted Mo layer on the thermal stability of perpendicularly magnetized Ta/Mo/Co20Fe60B20/MgO/Ta films

    NASA Astrophysics Data System (ADS)

    Li, Minghua; Lu, Jinhui; Yu, Guoqiang; Li, Xiang; Han, Gang; Chen, Xi; Shi, Hui; Yu, Guanghua; Amiri, Pedram Khalili; Wang, Kang L.

    2016-04-01

    We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta films with and without inserted Mo layers. In the absence of a Mo layer, the films show PMA at annealing temperatures below 300 °C. On the other hand, the insertion of a Mo layer preserves PMA at annealing temperatures of up to 500 °C; however, a higher annealing temperature leads to the collapse of PMA. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used to study the microstructure of the films to understand the deterioration of PMA. The XPS results show that the segregation of Ta is partly suppressed by inserting a Mo layer. Once inserted, Mo does not remain at the interface of Ta and CoFeB but migrates to the surface of the films. The HRTEM results show that the crystallization of the MgO (001) texture is improved owing to the higher annealing temperature of the Mo inserted sample. A smooth and clear CoFeB/MgO interface is evident. The inserted Mo layer not only helps to obtain sharper and smoother interfaces but also contributes to the crystallization after the higher annealing temperature of films.

  3. Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

    SciTech Connect

    Herrera Diez, L. García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Ravelosona, D.; Lamperti, A.; Mantovan, R.; Ocker, B.

    2015-07-20

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

  4. Controlling magnetic domain wall motion in the creep regime in He+-irradiated CoFeB/MgO films with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Herrera Diez, L.; García-Sánchez, F.; Adam, J.-P.; Devolder, T.; Eimer, S.; El Hadri, M. S.; Lamperti, A.; Mantovan, R.; Ocker, B.; Ravelosona, D.

    2015-07-01

    This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He+ ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H-1/4 behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field Hdep. In turn, H* ≈ Hdep is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

  5. Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

    SciTech Connect

    An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Xie, Qian; Zhang, Zhengjun; Wang, Jian

    2015-03-15

    To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

  6. Magnetic reversal phenomena of perpendicular magnetic islands fabricated by block copolymer lithography

    NASA Astrophysics Data System (ADS)

    Ilievski, Filip; Ross, C. A.; Vancso, G. J.

    2008-04-01

    Templated block copolymer lithography has been proposed as a method of fabricating patterned magnetic media. This paper discusses the magnetic properties of perpendicular CoCrPt magnetic uniaxial islands in a range of sizes (5-15nm thick, 20-35nm diameter) fabricated by this method. Sputter-deposited films of perpendicular CoCrPt films were patterned in a series of reactive and ion beam etches. The magnetic islands maintain the perpendicular magnetization from the film, but show increased coercivity (800-1650Oe) as compared to the film (150Oe). Time-scale-dependent magnetic measurements show switching volumes (V*) on the order of the physical volume of the dots (˜5000nm3), suggesting that the dots switch their magnetization coherently and independently of each other. Last, we demonstrate selectively removable topographic templates for imposing long-range order to the system.

  7. Random Field effects in perpendicular-anisotropy multilayer films

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Silevitch, Daniel; Rosenbaum, Thomas

    With the application of a magnetic field transverse to the magnetic easy axis, randomly-distributed 3D collections of dipole-coupled Ising spins form a realization of the Random-Field Ising Model. Tuning the strength of the site-specific random field, and hence the disorder, via the applied transverse field regulates the domain reversal energetics and hence the macroscopic hysteresis loop. We extend this approach to two dimensions, using sputtered Perpendicular Magnetic Anisotropy (PMA) Co/Pt multilayer thin films. We characterize the coercive fields and hysteresis loops at a series of temperatures and transverse fields.

  8. Surface pinning in ferromagnetic films with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Burgos, E.; Sallica Leva, E.; Gómez, J.; Martínez Tabares, F.; Vásquez Mansilla, M.; Butera, A.

    2011-05-01

    We have studied the ferromagnetic resonance response in a series of atomically disordered FePt thin films as a function of film thickness (9-200 nm) and excitation frequency (9.5 and 24 GHz). These films are characterized by a perpendicular anisotropy that promotes a stripelike magnetic domain structure above a critical thickness dcr~30 nm. All films display a resonant absorption due to the uniform precession of the magnetization vector. The analysis of the linewidth as a function of film thickness shows that the line broadens considerably above dcr. In the thinner films (d<28 nm) we have only observed the absorption related to the uniform precession mode, but thicker films, in which a stripe domain pattern is observed at zero field in static magnetic measurements, show an additional resonance line when the magnetic field is applied at, or very close to, the film plane normal. This line appears at fields below the main resonance and is observed at both X and K bands with approximately the same field separation from the uniform mode. We have also found that the line separation between the two resonances varies with the film thickness, indicating that the appearance of an additional resonance is related to confinement effects, but does not follow the quadratic law expected for infinite surface pinning. The ferromagnetic resonance results have been interpreted within a model of standing spin waves with finite surface pinning. From the angular variation of the pinning parameter close to the film normal we have found that the surface anisotropy is perpendicular to the film plane and increases with film thickness. The origin of the surface anisotropy seems to be related to a substrate-induced strain produced in the fabrication process and to a surface layer with a reduced magnetization. Annealing the samples at relatively low temperatures produces important changes in the resonance spectra. The overall observed behavior suggests that even though the resonance experiments

  9. Stoichiometry dependent phase transition in Mn-Co-Ga-based thin films: From cubic in-plane, soft magnetized to tetragonal perpendicular, hard magnetized

    SciTech Connect

    Ouardi, Siham; Fecher, Gerhard H.; Stinshoff, Rolf; Felser, Claudia; Kubota, Takahide; Mizukami, Shigemi; Miyazaki, Terunobu; Ikenaga, Eiji

    2012-12-10

    Epitaxial thin films of Mn{sub 3-x}Co{sub x}Ga were grown on MgO by magnetron co-sputtering with different Co content. Dependent on the Co content tetragonal or cubic structures are obtained. The composition dependence of saturation magnetization M{sub S} and uniaxial magnetic anisotropy K{sub u} in the epitaxial films were investigated. A high magnetic anisotropy K{sub u} of 1.2 MJ m{sup -3} was achieved for the Mn{sub 2.6}Co{sub 0.3}Ga{sub 1.1} film with low magnetic moment of 0.84 {mu}{sub B}. The valence band spectra of the films were investigated mainly by hard x-ray photoelectron spectroscopy. The evidence of sharp states in the cubic case, which are smeared out in the tetragonal case, proof the existence of a van Hove singularity that causes a band Jahn-Teller effect accompanied by a tetragonal distortion. These differences are in well agreement to the ab-initio calculations of the electronic structure.

  10. Micromagnetic Study of Perpendicular Magnetic Recording Media

    NASA Astrophysics Data System (ADS)

    Dong, Yan

    With increasing areal density in magnetic recording systems, perpendicular recording has successfully replaced longitudinal recording to mitigate the superparamagnetic limit. The extensive theoretical and experimental research associated with perpendicular magnetic recording media has contributed significantly to improving magnetic recording performance. Micromagnetic studies on perpendicular recording media, including aspects of the design of hybrid soft underlayers, media noise properties, inter-grain exchange characterization and ultra-high density bit patterned media recording, are presented in this dissertation. To improve the writability of recording media, one needs to reduce the head-to-keeper spacing while maintaining a good texture growth for the recording layer. A hybrid soft underlayer, consisting of a thin crystalline soft underlayer stacked above a non-magnetic seed layer and a conventional amorphous soft underlayer, provides an alternative approach for reducing the effective head-to-keeper spacing in perpendicular recording. Micromagnetic simulations indicate that the media using a hybrid soft underlayer helps enhance the effective field and the field gradient in comparison with conventional media that uses only an amorphous soft underlayer. The hybrid soft underlayer can support a thicker non-magnetic seed layer yet achieve an equivalent or better effective field and field gradient. A noise plateau for intermediate recording densities is observed for a recording layer of typical magnetization. Medium noise characteristics and transition jitter in perpendicular magnetic recording are explored using micromagnetic simulation. The plateau is replaced by a normal linear dependence of noise on recording density for a low magnetization recording layer. We show analytically that a source of the plateau is similar to that producing the Non-Linear-Transition-Shift of signal. In particular, magnetostatic effects are predicted to produce positive correlation of

  11. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy.

    PubMed

    Gopman, D B; Dennis, C L; Chen, P J; Iunin, Y L; Finkel, P; Staruch, M; Shull, R D

    2016-01-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638

  12. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-06-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

  13. Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

    PubMed Central

    Gopman, D. B.; Dennis, C. L.; Chen, P. J.; Iunin, Y. L.; Finkel, P.; Staruch, M.; Shull, R. D.

    2016-01-01

    Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices. PMID:27297638

  14. Recording performances in perpendicular magnetic patterned media

    NASA Astrophysics Data System (ADS)

    Asbahi, M.; Moritz, J.; Dieny, B.; Gourgon, C.; Perret, C.; van de Veerdonk, R. J. M.

    2010-09-01

    We report on the recording performances and signal-to-noise ratio (SNR) analyses of perpendicular magnetic bit-patterned media. Two different types of magnetic samples are investigated. They differ by the way that they were patterned (nano-imprint versus e-beam lithography) as well as their magnetic properties (Co/Pt multilayers and CoCrPt alloy are the recording layers).Using a contact read/write quasi-static tester, we were able to characterize the write windows, the bit error rates and measure the SNR. The influence of magnetic properties and media microstructure on the writing processes is studied. We show also that the lithographical method used to replicate the media induces more or less noise due to structural distributions.

  15. Ag induced enhancement of perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Shern, C. S.; Su, C. W.; Wu, Y. E.; Chen, S. H.

    2001-12-01

    Some interesting magnetic properties were observed after Ag ultrathin films were deposited on Co/Pt(1 1 1). The spin reversal of Co can be prevented when Ag atoms cap Co on Pt(1 1 1). The out-of-plane magnetization has a significant enhancement after annealing at high temperature. The Curie temperature increases from 625 to 710 K as 1 ML of Ag is deposited on 1 ML Co/Pt(1 1 1). The change of surface anisotropy and the formation of a Co-Pt alloy are possible mechanisms for the magnetization enhancement.

  16. X-ray study of aligned magnetic stripe domains in perpendicular multilayers

    SciTech Connect

    Hellwig, O.; Denbeaux, G.P.; Kortright, J.B.; Fullerton, Eric E.

    2003-03-03

    We have investigated the stripe domain structure and the magnetic reversal of perpendicular Co/Pt based multilayers at room temperature using magnetometry, magnetic imaging and magnetic x-ray scattering. In-plane field cycling aligns the stripe domains along the field direction. In magnetic x-ray scattering the parallel stripe domains act as a magnetic grating resulting in observed Bragg reflections up to 5th order. We model the scattering profile to extract and quantify the domain as well as domain wall widths. Applying fields up to {approx}1.2 kOe perpendicular to the film reversibly changes the relative width of up versus down domains while maintaining the overall stripe periodicity. Fields above 1.2 kOe introduce irreversible changes into the domain structure by contracting and finally annihilating individual stripe domains. We compare the current results with modeling and previous measurements of films with perpendicular anisotropy.

  17. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

    NASA Astrophysics Data System (ADS)

    Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

    2015-07-01

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer motif. We demonstrate the transfer of magnetic properties from thin films to lithographically defined 2 μm particles which have been lifted off into solution. We simulate the minimum energy state of a synthetic antiferromagnetic bilayer system that is free to rotate in an applied field and show that the low field susceptibility of the system is equal to the magnetic hard axis followed by a sharp switch to full magnetization as the field is increased. This agrees with the experimental results and explains the behaviour of the particles in solution.

  18. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

    PubMed Central

    Vemulkar, T.; Mansell, R.; Petit, D. C. M. C.; Cowburn, R. P.; Lesniak, M. S.

    2015-01-01

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer motif. We demonstrate the transfer of magnetic properties from thin films to lithographically defined 2 μm particles which have been lifted off into solution. We simulate the minimum energy state of a synthetic antiferromagnetic bilayer system that is free to rotate in an applied field and show that the low field susceptibility of the system is equal to the magnetic hard axis followed by a sharp switch to full magnetization as the field is increased. This agrees with the experimental results and explains the behaviour of the particles in solution. PMID:26221056

  19. Electromigration induced fast L10 ordering phase transition in perpendicular FePt films

    NASA Astrophysics Data System (ADS)

    Feng, Chun; Li, Xujing; Yang, Meiyin; Gong, Kui; Zhu, Yuanmin; Zhan, Qian; Sun, Li; Li, Baohe; Jiang, Yong; Yu, Guanghua

    2013-01-01

    Realizing fast L10 ordering phase transition (LOPT) in L10 structured magnetic materials without heat treatment is crucial for their applications in spintronic devices. This article reports on the electromigration controlled momentum transfer and rapid ordering of Fe and Pt atoms in the as-deposited FePt films. Lattice defects in the films provide enough diffusion pathways and allow the Fe and Pt atoms rearranging. Through the current driven atomic motion and rearrangement, fast LOPT can result in the establishment of perpendicular magnetic anisotropy of the FePt films at room temperature. This effect is expected to work with other L10 typed magnetic materials for spintronic devices development.

  20. Size Dependence of Magnetic Properties of Nanoscale CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance

    NASA Astrophysics Data System (ADS)

    Mizunuma, Kotaro; Yamanouchi, Michihiko; Sato, Hideo; Ikeda, Shoji; Kanai, Shun; Matsukura, Fumihiro; Ohno, Hideo

    2013-06-01

    The junction diameter D dependence of effective magnetic fields in a recording layer of CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic easy axis is evaluated by ferromagnetic resonance measurements using the homodyne detection technique. The effective perpendicular magnetic field increases with decreasing D, which reflects mainly the reduction of the demagnetizing factor normal to the film plane. The stray field from a reference layer also increases with reducing D, which is in agreement with the D dependence of the shift field of the center of minor resistance versus perpendicular magnetic field curves with respect to zero magnetic field.

  1. Magnetization reversal and enhanced tunnel magnetoresistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes

    NASA Astrophysics Data System (ADS)

    Wang, Yi; Yin, Xiaolu; Le Roy, D.; Jiang, Jun; Wei, H. X.; Liou, S. H.; Han, X. F.

    2013-04-01

    The [Co/Pt]n multilayer based perpendicular magnetic tunnel junction stacks with wedged Co60Fe20B20 insertions up to 2 nm, and corresponding perpendicular magnetic tunnel junctions were magnetically and electrically investigated. The focus is on the influence of CoFeB insertions in the free and reference electrodes on the overall junction magnetization reversal and magnetoresistance response. The exchange spring behavior was revealed as the Co60Fe20B20 spins canting towards the in-plane direction in the [Co/Pt]n/Co60Fe20B20 hard/soft perpendicular magnetic electrodes. The broad range thickness of wedged Co60Fe20B20 insertion enables to reveal the critical transition, in particular, from rigid coupling to exchange spring coupling. With the help of 375°C annealing under 10 kOe magnetic field, the recovery from distinct multi-domain structure to nearly single domain structure was distinctly observed in the unpatterned perpendicular magnetic tunnel junction (p-MTJ) films with CoFeB thickness tCFB≥1.5 nm. Meanwhile, for the corresponding patterned perpendicular magnetic tunnel junctions with AlOx barrier, the tunnel magnetoresistance (TMR) ratio exhibited an intense enhancement over 100%. The TMR results and spin configurations were illustrated using an exchange spring model in both magnetic electrodes. The presented study shows the benefit of using exchange spring magnetic electrodes in perpendicular magnetic tunnel junction on their performance.

  2. Enhancement of perpendicular magnetic anisotropy of Co layer in exchange-biased Au/Co/NiO/Au polycrystalline system

    NASA Astrophysics Data System (ADS)

    Kuświk, P.; Szymański, B.; Anastaziak, B.; Matczak, M.; Urbaniak, M.; Ehresmann, A.; Stobiecki, F.

    2016-06-01

    The perpendicular exchange bias in NiO(antiferromagnet)/Co(ferromagnet) polycrystalline layer films is studied. It is found that the NiO layer forces the Co layer magnetization to be oriented perpendicular to the film plane in a greater thickness range than is found in the Au/Co/Au system. Simultaneously, a large coercivity and a significant perpendicular exchange bias field were observed that are owing to the interlayer exchange bias coupling between NiO and Co, which supports the perpendicular magnetic anisotropy of the Co layer. These findings are confirmed by magnetometry and magnetoresistance measurements.

  3. Perpendicularly magnetized (001)-textured D0{sub 22} MnGa films grown on an (Mg{sub 0.2}Ti{sub 0.8})O buffer with thermally oxidized Si substrates

    SciTech Connect

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Mitani, Seiji; Hono, Kazuhiro

    2015-10-28

    We report the growth of (001)-textured polycrystalline D0{sub 22} MnGa films with perpendicular magnetic anisotropy (PMA) on thermally oxidized Si substrates using an (Mg{sub 0.2}Ti{sub 0.8})O (MTO) buffer layer. The ordered D0{sub 22} MnGa film grown at the optimum substrate temperature of 530 °C on the MTO buffer layer shows PMA with magnetization of 80 kA/m, PMA energy density of 0.28 MJ/m{sup 3}, and coercivity of 2.3 T. The scanning transmission electron microscope analysis confirms the formation of a highly (001)-textured structure and the elementally sharp interfaces between the MTO layer and the MnGa layer. The achieved D0{sub 22} MnGa PMA films on an amorphous substrate will provide the possible pathway of integration of a Mn-based PMA film into Si-based substrates.

  4. Fabrication of MgO-based magnetic tunnel junctions with CoCrPt perpendicularly magnetized electrodes

    SciTech Connect

    Watanabe, Daisuke; Mizukami, Shigemi; Miyazaki, Terunobu; Oogane, Mikihiko; Naganuma, Hiroshi; Ando, Yasuo

    2009-04-01

    The applicability of perpendicularly magnetized CoCrPt films to the MgO-based magnetic tunnel junctions (MTJs) was investigated. For this study, CoCrPt films deposited on the Ru buffer exhibited hcp(0002)-oriented growth by sputtering method using the low substrate temperature of 250 deg. C, low saturation magnetization of around 360 emu/cm{sup 3}, and high magnetic anisotropy field of 6 kOe, which is sufficient to retain the thermal stability of the magnetization direction. The MgO-based MTJs with a synthetic ferrimagnetlike structure were fabricated: CoFe was coupled magnetically with CoCrPt through the thin Ru layer. Transport properties with a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of about 6% at room temperature.

  5. Fabrication of MgO-based magnetic tunnel junctions with CoCrPt perpendicularly magnetized electrodes

    NASA Astrophysics Data System (ADS)

    Watanabe, Daisuke; Mizukami, Shigemi; Oogane, Mikihiko; Naganuma, Hiroshi; Ando, Yasuo; Miyazaki, Terunobu

    2009-04-01

    The applicability of perpendicularly magnetized CoCrPt films to the MgO-based magnetic tunnel junctions (MTJs) was investigated. For this study, CoCrPt films deposited on the Ru buffer exhibited hcp(0002)-oriented growth by sputtering method using the low substrate temperature of 250 °C, low saturation magnetization of around 360 emu/cm3, and high magnetic anisotropy field of 6 kOe, which is sufficient to retain the thermal stability of the magnetization direction. The MgO-based MTJs with a synthetic ferrimagnetlike structure were fabricated: CoFe was coupled magnetically with CoCrPt through the thin Ru layer. Transport properties with a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of about 6% at room temperature.

  6. Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite Co{sub x}Fe{sub 3−x}O{sub 4}(001) (x = 0.75, 1.0) thin films

    SciTech Connect

    Niizeki, Tomohiko; Utsumi, Yuji; Aoyama, Ryohei; Yanagihara, Hideto; Inoue, Jun-ichiro; Kita, Eiji; Yamasaki, Yuichi; Nakao, Hironori; Koike, Kazuyuki

    2013-10-14

    Perpendicular magnetic anisotropy (PMA) of cobalt-ferrite Co{sub x}Fe{sub 3-x}O{sub 4} (x = 0.75 and 1.0) epitaxial thin films grown on MgO (001) by a reactive magnetron sputtering technique was investigated. The saturation magnetization was found to be 430 emu/cm{sup 3} for x = 0.75, which is comparable to that of bulk CoFe{sub 2}O{sub 4} (425 emu/cm{sup 3}). Torque measurements afforded PMA constants of K{sub u}{sup eff}=9.0 Merg/cm{sup 3} (K{sub u}=10.0 Merg/cm{sup 3}) and K{sub u}{sup eff}=9.7 Merg/cm{sup 3} for x = 0.75 and 1.0, respectively. The value of K{sub u}{sup eff} extrapolated using Miyajima's plot was as high as 14.7 Merg/cm{sup 3} for x = 1.0. The in-plane four-fold magnetic anisotropy was evaluated to be 1.6 Merg/cm{sup 3} for x = 0.75. X-ray diffraction measurement revealed our films to be pseudomorphically strained on MgO (001) with a Poisson ratio of 0.4, leading to a considerable in-plane tensile strain by which the extraordinarily large PMA could be accounted for.

  7. Purely electric-field-driven perpendicular magnetization reversal.

    PubMed

    Hu, Jia-Mian; Yang, Tiannan; Wang, Jianjun; Huang, Houbing; Zhang, Jinxing; Chen, Long-Qing; Nan, Ce-Wen

    2015-01-14

    If achieved, magnetization reversal purely with an electric field has the potential to revolutionize the spintronic devices that currently utilize power-dissipating currents. However, all existing proposals involve the use of a magnetic field. Here we use phase-field simulations to study the piezoelectric and magnetoelectric responses in a three-dimensional multiferroic nanostructure consisting of a perpendicularly magnetized nanomagnet with an in-plane long axis and a juxtaposed ferroelectric nanoisland. For the first time, we demonstrate a full reversal of perpendicular magnetization via successive precession and damping, driven purely by a perpendicular electric-field pulse of certain pulse duration across the nanoferroelectric. We discuss the materials selection and size dependence of both nanoferroelctrics and nanomagnets for experimental verification. These results offer new inspiration to the design of spintronic devices that simultaneously possess high density, high thermal stability, and high reliability. PMID:25549019

  8. Spin Hall Control of Magnetization in a Perpendicularly-Magnetized Magnetic Insulator

    NASA Astrophysics Data System (ADS)

    Pai, Chi-Feng; Quindeau, Andy; Tang, Astera; Onbasli, Mehmet; Mann, Maxwell; Caretta, Lucas; Ross, Caroline; Beach, Geoffrey

    Spin Hall effect (SHE)-induced spin-orbit torque (SOT) has been shown to be an efficient mechanism to control the magnetization in magnetic heterostructures. Although numerous works have demonstrated the efficacy of SOT in manipulating the magnetization of ferromagnetic metals (FM), SOT-controlled switching of ferromagnetic insulators (FMIs) has not yet been observed. In this work we show that spin Hall currents in Pt and Ta can generate SOTs strong enough to control the magnetization direction in an adjacent thulium iron garnet FMI film with perpendicular magnetic anisotropy. We find that dc current in the heavy metal (HM) generates an out-of-plane effective field in the FMI consistent with an antidamping torque whose magnitude is comparable to that observed in all-metallic systems. Spin Hall magnetoresistance (SMR) measurements reveal a large spin-mixing conductance, which implies considerable spin transparency at the metal/insulator interface and explains the observed strong current-induced torque. Our results show that charge currents flowing in a HM can be used to both control and detect the magnetization direction in a FMI electrically.

  9. Copper dusting effects on perpendicular magnetic anisotropy in Pt/Co/Pt tri-layers

    NASA Astrophysics Data System (ADS)

    Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S.

    2016-05-01

    The effect of Cu dusting on perpendicular magnetic anisotropy of sputter grown Pt/Co/Pt stack in which the Cu layer is in proximity with that of Co is investigated in this work. We used magneto optic Kerr effect microscopy measurements to study the variation in the reversal mechanisms in films with Co thicknesses below 0.8nm by systematically varying their perpendicular magnetic anisotropy using controlled Cu dusting. Cu dusting was done separately above and below the cobalt layer in order to understand the role of bottom and top Pt layers in magnetization reversal mechanisms of sputtered Pt/Co/Pt stack. The introduction of even 0.3nm thick Cu layer below the cobalt layer drastically affected the perpendicular magnetic anisotropy as evident from the nucleation behavior. On the contrary, even a 4nm thick top Cu layer had little effect on the reversal mechanism. These observations along with magnetization data was used to estimate the role of top and bottom Pt in the origin of perpendicular magnetic anisotropy as well as magnetization switching mechanism in Pt/Co/Pt thin films. Also, with an increase in the bottom Cu dusting from 0.2 to 0.4nm there was an increase in the number of nucleation sites resulting in the transformation of domain wall patterns from a smooth interface type to a finger like one and finally to maze type.

  10. Isothermal switching of perpendicular exchange bias by pulsed high magnetic field

    NASA Astrophysics Data System (ADS)

    Shiratsuchi, Yu; Wakatsu, Kohei; Nakamura, Tetsuya; Oikawa, Hiroto; Maenou, Satoru; Narumi, Yasuo; Tazoe, Kou; Mitsumata, Chiharu; Kinoshita, Toyohiko; Nojiri, Hiroyuki; Nakatani, Ryoichi

    2012-06-01

    Isothermal switching of a perpendicular exchange bias by a strong pulsed magnetic field has been investigated using a Pt/Co/α-Cr2O3 thin film system. The switching of the perpendicular exchange bias is accompanied by the spin reversal of interfacial uncompensated antiferromagnetic Cr spins. We have also demonstrated that the switching of the exchange bias is reversible by changing the pulsed magnetic field direction. The mechanism of the demonstrated switching is discussed from the viewpoint of the spin flop transition of the α-Cr2O3 layer.

  11. Perpendicular magnetic anisotropy in Ta/Co2FeAl/MgO multilayers

    NASA Astrophysics Data System (ADS)

    Gabor, M. S.; Petrisor, T.; Tiusan, C.; Petrisor, T.

    2013-08-01

    In this paper, we demonstrate the stabilization of perpendicular magnetic anisotropy (PMA) in Ta/Co2FeAl/MgO multilayers sputtered on thermally oxidized Si(100) substrates. The magnetic analysis points out that these films show significant interfacial anisotropy even in the as-deposited state, KS=0.67 erg/cm2, enough to provide PMA for the as-deposited films with thicknesses below 1.5 nm. Moreover, the interfacial anisotropy is enhanced by thermal annealing up to 300 °C. The presence of a magnetic dead layer, whose thickness increases with annealing temperature, was also identified.

  12. CoCrPt antidot arrays with perpendicular magnetic anisotropy made on anodic alumina templates

    NASA Astrophysics Data System (ADS)

    Navas, D.; Ilievski, F.; Ross, C. A.

    2009-06-01

    Ti(5 nm)/CoCrPt(5-20 nm) bilayers with perpendicular magnetic anisotropy were deposited by rf sputtering onto porous alumina films to form antidot arrays with period 105 nm and pore diameters ranging from 18 to 56 nm. The coercivities of the antidot arrays are greater than those of unpatterned films and show only a weak dependence on antidot diameter. Magnetic force microscopy of ac-demagnetized samples shows that the antidot arrays have domain sizes larger than the 105 nm period. The magnetic behavior is discussed in terms of domain wall pinning by the antidots.

  13. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector.

    PubMed

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet's principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet's principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies. PMID:26740335

  14. Light scattering of rectangular slot antennas: parallel magnetic vector vs perpendicular electric vector

    PubMed Central

    Lee, Dukhyung; Kim, Dai-Sik

    2016-01-01

    We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies. PMID:26740335

  15. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    PubMed Central

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-01-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form −K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated −K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface. PMID:27246631

  16. Second order anisotropy contribution in perpendicular magnetic tunnel junctions.

    PubMed

    Timopheev, A A; Sousa, R; Chshiev, M; Nguyen, H T; Dieny, B

    2016-01-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form -K2cos(4)θ must be added to the conventional uniaxial -K1cos(2)θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated -K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from "easy-axis" to "easy-cone" regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface. PMID:27246631

  17. Second order anisotropy contribution in perpendicular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Timopheev, A. A.; Sousa, R.; Chshiev, M.; Nguyen, H. T.; Dieny, B.

    2016-06-01

    Hard-axis magnetoresistance loops were measured on perpendicular magnetic tunnel junction pillars of diameter ranging from 50 to 150 nm. By fitting these loops to an analytical model, the effective anisotropy fields in both free and reference layers were derived and their variations in temperature range between 340 K and 5 K were determined. It is found that a second-order anisotropy term of the form ‑K2cos4θ must be added to the conventional uniaxial –K1cos2θ term to explain the experimental data. This higher order contribution exists both in the free and reference layers. At T = 300 K, the estimated ‑K2/K1 ratios are 0.1 and 0.24 for the free and reference layers, respectively. The ratio is more than doubled at low temperatures changing the ground state of the reference layer from “easy-axis” to “easy-cone” regime. The easy-cone regime has clear signatures in the shape of the hard-axis magnetoresistance loops. The existence of this higher order anisotropy was also confirmed by ferromagnetic resonance experiments on FeCoB/MgO sheet films. It is of interfacial nature and is believed to be due to spatial fluctuations at the nanoscale of the first order anisotropy parameter at the FeCoB/MgO interface.

  18. Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer

    SciTech Connect

    Wei, H. X.; Qin, Q. H.; Wen, Z. C.; Han, Prof. X. F.; Zhang, Xiaoguang

    2009-01-01

    Linear magnetoresistance (MR) is an important attribute for magnetic sensor designs for space applications, three dimensional detection of the magnetic field, and high field measurements. Here we demonstrate that a large linear MR of up to 22% can be achieved in a magnetic tunnel junction that consists of two ferromagnetic layers, one with out of plane and one with in plane magnetic anisotropy. The tunnelling magnetoresistance (TMR) is measured with the electrical current perpendicular to the film plane. The magnetic configuration of the device is analyzed.

  19. Perpendicularly magnetized spin filtering Cu/Ni multilayers

    SciTech Connect

    Shirahata, Yasuhiro; Wada, Eiji; Itoh, Mitsuru; Taniyama, Tomoyasu

    2014-01-20

    Spin filtering at perpendicular magnetized Cu/Ni multilayer/GaAs(001) interfaces is demonstrated at remanence using optical spin orientation method. [Cu(9 nm)/Ni(t{sub Ni} nm)]{sub n} multilayers are found to show a crossover from the in-plane to out-of-plane magnetic anisotropy at the Cu/Ni bilayer repetition n = 4 and the Ni layer thickness t{sub Ni} = 3. For a perpendicularly magnetized Cu/Ni multilayer/n-GaAs(001) interface, circular polarization dependent photocurrent shows a clear hysteretic behavior under optical spin orientation conditions as a function of magnetic field out-of-plane while the bias dependence exhibits a substantial peak at a forward bias, verifying that Cu/Ni multilayers work as an efficient spin filter in the remanent state.

  20. Thermal annealing effect on FeCoB soft underlayer for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Yu, Jun; Chang, Chunghee; Karns, Duane; Ju, Ganping; Kubota, Yukiko; Eppler, Walter; Brucker, Charles; Weller, Dieter

    2002-05-01

    We study the noise performance of amorphous FeCoB soft underlayers (SULs) with radial magnetic anisotropy. 200 nm thick FeCoB films are sputter deposited and optionally postannealed for 8 s at different annealing powers. The correlation of SUL read-back noise with the magnetic and structural properties is studied using spin stand testing, in-plane magneto-optical Kerr effect measurements, magnetic force microscopy, and x-ray diffraction. The effects of annealing to achieve low read-back noise are examined. It is found that as-prepared films show large dc noise associated with stripe domains due to stress-induced perpendicular anisotropy. Thermal annealing reduces the internal stress and the films become magnetically anisotropic in the radial direction. The SUL-induced dc noise drops to the electronic noise floor. dc noise is found to decrease with an increase in annealing power until the films start to crystallize.

  1. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-01

    Heulser alloys Fe2Cr1-xCoxSi (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 106 erg/cm3. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe2CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  2. Ferromagnetic resonance of exchange-coupled perpendicularly magnetized bilayers

    NASA Astrophysics Data System (ADS)

    Devolder, Thibaut

    2016-04-01

    Strong ferromagnetic interlayer exchange couplings J in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination of broadband ferromagnetic resonance methods and magnetometry hysteresis loops. For this, we model the switching and the eigenexcitations in bilayer systems comprising a soft layer coupled to a thicker harder layer that possesses higher perpendicular magnetic anisotropy. For large J > 0, the switching fields are essentially independent of J but the frequency of the optical eigenmode of the bilayer and the linewidth of the acoustical and optical eigenmode are directly sensitive to the coupling. We derive a corpus of compact analytical expressions to analyze these frequencies, their linewidth and discuss the meaning thereof. We illustrate this corpus on a system mimicking the fixed layers of a magnetic tunnel junction meant for spin torque applications.

  3. Dirac oscillator in perpendicular magnetic and transverse electric fields

    SciTech Connect

    Nath, D.; Roy, P.

    2014-12-15

    We study (2+1) dimensional massless Dirac oscillator in the presence of perpendicular magnetic and transverse electric fields. Exact solutions are obtained and it is shown that there exists a critical magnetic field B{sub c} such that the spectrum is different in the two regions B>B{sub c} and Bmagnetic as well as electric field. • Exact solutions are found. • Critical cases have been examined.

  4. Interface induced manipulation of perpendicular exchange bias in Pt/Co/(Pt,Cr)/CoO thin films

    NASA Astrophysics Data System (ADS)

    Akdoğan, N.; Yağmur, A.; Öztürk, M.; Demirci, E.; Öztürk, O.; Erkovan, M.

    2015-01-01

    Perpendicular exchange bias has been manipulated by changing ferromagnetic film thickness and spacer layer in Pt/Co/(Pt,Cr)/CoO thin films. The exchange bias characteristics, blocking temperature, and magnetization of thin films strongly depend on the spacer layer (Pt,Cr) between ferromagnetic and antiferromagnetic layers. While Pt/Co/Pt/CoO thin films show perpendicular exchange bias, Pt/Co/Cr/CoO has exchange bias with easy magnetization axis in the film plane. We have also observed very small hysteretic behavior from the hard axis magnetization curve of Pt/Co/Cr/CoO film. This can be attributed to misalignment of the sample or small perpendicular contribution from Pt/Co bottom interface. We have also investigated the temperature and spacer layer dependent exchange bias properties of the samples. We observed higher HEB and HC for the thicker Co layer in the Pt/Co/Pt/CoO sample. In addition, onset of exchange bias effect starts at much lower temperatures for Pt/Co/Cr/CoO thin film. This clearly shows that Cr spacer layer not only removes the perpendicular exchange bias, but also reduces the exchange interaction between Co and CoO and thus lowers the TB.

  5. Optimization of Ta thickness for perpendicular magnetic tunnel junction applications in the MgO-FeCoB-Ta system

    NASA Astrophysics Data System (ADS)

    Sokalski, Vincent; Moneck, Matthew T.; Yang, En; Zhu, Jian-Gang

    2012-08-01

    The impact of Ta thickness on magnetic anisotropy and interlayer magnetic coupling is evaluated for the Ta-FeCoB-MgO thin film system commonly used in magnetic tunnel junctions. It is shown that there exists a window of Ta thickness where strong magnetic coupling of FeCoB with another magnetic layer is achievable through Ta while still maintaining properties required for use in a perpendicular magnetic tunnel junction. We also expand on existing knowledge about the role of annealing temperature, film composition, and seedlayer sequence on magnetic anisotropy in Ta/FeCoB/MgO tri-layers of varying FeCoB thickness.

  6. Experimental modeling of intergranular exchange coupling for perpendicular thin film media

    NASA Astrophysics Data System (ADS)

    Sokalski, Vincent; Laughlin, David E.; Zhu, Jian-Gang

    2009-09-01

    We present an experimental model system that enables quantitative assessment of intergranular exchange coupling in CoCrPt-oxide perpendicular magnetic recording media. A thin film structure consisting of a high coercivity CoPt unicrystal layer and a lower coercivity CoPt layer separated by a thin oxide interlayer is used to model perpendicularly magnetized grains separated by oxide grain boundaries. Exchange coupling energy between the CoPt layers was obtained for SiOx, TiOx, and CrOx interlayers by measuring field shifts from the lower coercivity layer. Cr segregation in CoCrPt grains to grain boundaries is also modeled experimentally and found to significantly suppress exchange coupling.

  7. CrPt3 thin film media for perpendicular or magneto-optical recording

    NASA Astrophysics Data System (ADS)

    Leonhardt, T. D.; Chen, Y.; Rao, M.; Laughlin, D. E.; Lambeth, D. N.; Kryder, M. H.

    1999-04-01

    The magnetic properties of CrPt3 L12 ferrimagnetic thin films have been studied. Films were produced by sputtering multilayers of Cr and Pt onto silicon nitride coated silicon substrates. The as-deposited films are nonmagnetic. An anneal at ˜800 °C results in ferrimagnetic behavior with a perpendicular easy-axis. X-ray diffraction and transmission electron microscopy (TEM) measurements show that (111) CrPt3 is the only crystalline phase present after annealing. Rocking curves with a full width at half maximum as low as 1.8° indicate good crystallographic orientation. Magnetic properties of the films vary with composition, annealing temperature and time, layer thickness, and sputtering conditions. The films exhibit large coercivities, Hc, that can be tuned in the range 1500-8000 Oe. Saturation magnetization, Ms, is typically 150-200 emu/cc. Squarenesses, S, as high as 0.99 have been found. A uniaxial magnetic anisotropy constant, Ku, of up to 8×106erg/cc was achieved. TEM micrographs show a 35 nm average grain size and complete interdiffusion of the Cr and Pt. Magneto-optical hysteresis loops at 632.8 nm wavelength reveal Kerr rotations of about 0.21° when the films are overcoated with a quarter-wavelength dielectric.

  8. Giant perpendicular magnetocrystalline anisotropy of 3d transition-metal thin films on MgO

    SciTech Connect

    Nakamura, Kohji Ikeura, Yushi; Akiyama, Toru; Ito, Tomonori

    2015-05-07

    Magnetocrystalline anisotropy (MCA) of the Fe-based transition-metal thin films was investigated by means of first principles full-potential linearized augmented plane wave method. A giant perpendicular MCA (PMCA), up to 3 meV, was confirmed in a 7-layer Fe-Ni film/MgO(001), where an Fe{sub 2}/Ni/Fe/Ni/Fe{sub 2} atomic-layer alignment with a bcc-like-layer stacking and the Fe/MgO interfaces play key roles for leading to the large PMCA. Importantly, we find that the PMCA overcomes enough over the magnetic dipole-dipole anisotropy that favors the in-plane magnetization even when the film thickness increases.

  9. Magnetic interaction in perpendicular recording media with synthetic nucleation layers

    NASA Astrophysics Data System (ADS)

    Piramanayagam, S. N.; Tan, H. K.; Ranjbar, M.; Wong, S. K.; Sbiaa, R.; Chong, T. C.

    2011-04-01

    Perpendicular recording media, where the CoCrPt-oxide recording layer is deposited on carbon based synthetic nucleation (SN) layers, have been proposed for recording applications and studied using first-order reversal curves for their magnetic interaction behavior. The magnetic properties of media with SN layer show better intergranular segregation whereas the media without SN layer shows otherwise. It is proposed that a dual SN layer structure, where an SN layer deposited above and below the high pressure sputtered Ru layer is suitable for achieving smaller grain size as well as better intergranular segregation.

  10. Microwave assisted magnetization reversal in cylindrical antidot arrays with in-plane and perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Yumak, Mehmet; Ture, Kerim; Aktas, Gulen; Vega, Victor; Prida, Victor; Garcia, Carlos

    2012-02-01

    Porous anodic alumina is a particularly attractive self-ordered system used as template to fabricate nanostructures. The anodic film contains a self-ordered hexagonal array of parallel pores with tunable pore size and interpore distance, and whose pore locations can be templated. Deposition of magnetic films onto porous alumina leads to the formation of porous magnetic films, whose properties differ significantly from those of unpatterned films. The study of antidot arrays has both technological and fundamental importance. Although porous alumina films are typically synthesized in a planar geometry, in this work we deposited NiFe and Ti/CoCrPt magnetic films with in-plane and out-of-plane anisotropy onto cylindrical-geometry porous anodic alumina substrates to achieve cylindrical antidot arrays. The effect of both, the magnitude of the AC current and the circular magnetic field on the magnetization reversal has been studied for in-plane and perpendicular anisotropies. The level of reduction in the switching field was found to be dependent on the power, the frequency of the microwave pulses and the circular applied magnetic field. Such a reduction is associate with the competition between pumping and damping processes.

  11. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    SciTech Connect

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji; Wang, Jian; Szivos, Janos; Safran, Gyorgy

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  12. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    NASA Astrophysics Data System (ADS)

    An, Hongyu; Wang, Jian; Szivos, Janos; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Safran, Gyorgy; Nakamura, Yoshio; Shi, Ji

    2015-11-01

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N2 into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L10 ordering transformation of CoPt.

  13. Small-angle polarized neutron studies of perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Lister, S. J.; Wismayer, M. P.; Venkataramana, V.; de Vries, M. A.; Ray, S. J.; Lee, S. L.; Thomson, T.; Kohlbrecher, J.; Do, H.; Ikeda, Y.; Takano, K.; Dewhurst, C.

    2009-09-01

    Polarized small-angle neutron scattering has been used to measure the local magnetic structure of writable thin-film perpendicular media with a granular CoCrPt-SiOx recording layer. By exploiting the cross terms between the nuclear and magnetic scattering, we are able to probe simultaneously both the grain structure and the subgranular magnetic structure of the recording layer, which has a thickness of only 15 nm and which is embedded within a full perpendicular media structure including soft underlayer. Two models are used to analyze the data, one analytical and the other a numerical approach based on transmission electron microscopy measurements of the grains. Both models show that the recording layer consists of ferromagnetically ordered core regions that are smaller in extent than the corresponding grains and allow a direct, quantitative comparison of these two length scales.

  14. Growth-induced perpendicular magnetic anisotropy and clustering in Ni xPt 1- x alloys

    NASA Astrophysics Data System (ADS)

    Vasumathi, D.; Shapiro, A. L.; Maranville, B. B.; Hellman, F.

    2001-02-01

    Polycrystalline and epitaxial (1 0 0), (1 1 0), and (1 1 1)-oriented Ni 3Pt, NiPt, and NiPt 3 films were deposited over a range of growth temperatures from 80°C to 700°C. Films grown at moderate temperatures (200-400°C) exhibit growth-induced properties similar to Co-Pt alloys: enhanced and broadened Curie temperature, perpendicular magnetic anisotropy and large coercivity. As in Co-Pt, the magnetic properties suggest a clustering of Ni into platelets on the growth surface, as the films are being grown. Unlike Co-Pt, however, NiPt films exhibit a strong orientational dependence of anisotropy and enhanced Curie temperature, possibly resulting from different types of surface reconstructions which affect the growth surface.

  15. Antiferromagnet-induced perpendicular magnetic anisotropy in ferromagnetic/antiferromagnetic/ferromagnetic trilayers

    NASA Astrophysics Data System (ADS)

    Wang, Bo-Yao; Lin, Po-Han; Tsai, Ming-Shian; Shih, Chun-Wei; Lee, Meng-Ju; Huang, Chun-Wei; Jih, Nae-Yeou; Wei, Der-Hsin

    2016-08-01

    This study demonstrates the effect of antiferromagnet-induced perpendicular magnetic anisotropy (PMA) on ferromagnetic/antiferromagnetic/ferromagnetic (FM/AFM/FM) trilayers and reveals its interplay with a long-range interlayer coupling between separated FM layers. In epitaxially grown 12 monolayer (ML) Ni/Co/Mn/5 ML Co/Cu(001) films, magnetic hysteresis loops and element-resolved magnetic domain imaging showed that the magnetization direction of the top layers of 12 ML Ni/Co films could be changed from the in-plane direction to the perpendicular direction, when the thickness of the Mn films (tMn) was greater than a critical value close to the thickness threshold associated with the onset of AFM ordering (tMn=3.5 ML). The top FM layers exhibited a significantly enhanced PMA when tMn increased further, and this enhancement can be attributed to a strengthened AFM ordering of the volume moments of the Mn films, as evidenced by the presence of induced domain frustration. By contrast, the long-range interlayer coupling presented clear effects only when tMn was at a lower coverage.

  16. Perpendicular propagation of electromagnetic solitons in magnetized thermal pair plasmas

    NASA Astrophysics Data System (ADS)

    Verheest, Frank

    2016-02-01

    The properties of perpendicularly propagating large amplitude electromagnetic solitons are investigated in a thermal, magnetized pair plasma. To obtain a tractable description, these solitons are assumed to be charge neutral and have a linearly polarized magnetic field, and thus represent the nonlinear extension of part of the linear extraordinary mode. From a Sagdeev pseudopotential analysis it transpires that these solitons are compressive and characterized by a wave magnetic field parallel to the static field. The existence domain in compositional parameter space shows pressure-dependent maxima for the soliton velocities, densities and total magnetic field. Physically, an increase in pressure yields a decrease in the acceptable maxima. This is also illustrated on typical pseudopotential and soliton profiles.

  17. Geometric control of the magnetization reversal in antidot lattices with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Gräfe, Joachim; Weigand, Markus; Träger, Nick; Schütz, Gisela; Goering, Eberhard J.; Skripnik, Maxim; Nowak, Ulrich; Haering, Felix; Ziemann, Paul; Wiedwald, Ulf

    2016-03-01

    While the magnetic properties of nanoscaled antidot lattices in in-plane magnetized materials have widely been investigated, much less is known about the microscopic effect of hexagonal antidot lattice patterning on materials with perpendicular magnetic anisotropy. By using a combination of first-order reversal curve measurements, magnetic x-ray microscopy, and micromagnetic simulations we elucidate the microscopic origins of the switching field distributions that arise from the introduction of antidot lattices into out-of-plane magnetized GdFe thin films. Depending on the geometric parameters of the antidot lattice we find two regimes with different magnetization reversal processes. For small antidots, the reversal process is dominated by the exchange interaction and domain wall pinning at the antidots drives up the coercivity of the system. On the other hand, for large antidots the dipolar interaction is dominating which leads to fragmentation of the system into very small domains that can be envisaged as a basis for a bit patterned media.

  18. Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers

    NASA Astrophysics Data System (ADS)

    Chang, Yao-Jen; Canizo-Cabrera, A.; Garcia-Vazquez, Valentin; Chang, Yang-Hua; Wu, Te-ho

    2013-05-01

    We fabricated MgO-based perpendicular magnetic tunnel junctions (p-MTJ) with Ta/CoFeB magnetic electrodes. Synthetic antiferromagnetic (SAF) pinned layers with perpendicular magnetic anisotropy (PMA) were included into the p-MTJs by using two Co/Pd multilayers (MLs) separated by a thin Ru spacer layer. The MTJs stack has the structure bottom contact/free layer CoFeB (1.0)/MgO (1)/pinned layer CoFeB (1.0)/Ta spacer layer/SAF/Ru cap layer/top contact (the units in parenthesis are in nanometers). The SAF was optimized by changing the repetition period n in one of the Co/Pd multilayers and the Ru thickness in order to obtain PMA with antiferromagnetic (AFM) coupling. The Ru spacer values were 0.7, 0.75, 0.8, 0.85, and 0.9 nm. The magnetic studies show that all magnetic films, including the Ta/CoFeB layers, are perpendicularly magnetized. The two Co/Pd MLs are AFM coupled for n > 2. Controlling the Ru thickness, the interlayer exchange coupling strength Jiec can be tailored. Jiec vs. Ru thickness exhibits a simple exponential decay. The electrical properties of the full p-MTJ with SAF show a low resistance-area (RA) product of 44.7 Ω μm2 and a tunnel magnetoresistance (TMR) ratio of 10.2%.

  19. Interlayer exchange coupling in perpendicularly magnetized synthetic ferrimagnet structure using CoCrPt and CoFeB

    NASA Astrophysics Data System (ADS)

    Watanabe, D.; Mizukami, S.; Wu, F.; Oogane, M.; Naganuma, H.; Ando, Y.; Miyazaki, T.

    2010-01-01

    Interlayer exchange coupling in synthetic ferrimagnet structures consisting of perpendicularly magnetized CoCrPt and in-plane magnetized CoFeB layers, which are coupled by a Ru thin spacer, were investigated. The magnetization of the CoFeB layer turned perpendicular to the film plane after annealing at 300°C because of the appearance of interlayer coupling from the CoCrPt layer. The coupling varied between antiferromagnetic and ferromagnetic depending on the Ru spacer thickness. The sign and strength of the coupling were also observed through analyses of magnetization curves and ferromagnetic resonance spectra.

  20. Dynamical mechanism for coercivity tunability in the electrically controlled FePt perpendicular films with small grain size

    SciTech Connect

    Feng, Chun Li, Xujing; Jiang, Yong; Yu, Guanghua; Yang, Meiyin; Gong, Kui; Li, Baohe

    2014-01-14

    This article reports property manipulations and related dynamical evolution in electromigration controlled FePt perpendicular films. Through altering voltage and treatment time of the power supply applied on the films, electronic momentum was fleetly controlled to manipulate the kinetic energy of Fe and Pt atoms based on momentum exchanges. The electromigration control behavior was proven to cause steerable ordering degree and grain growth in the films without thermal treatment. Processed FePt films with small grain size, high magnetocrystalline anisotropy, and controllable coercivity can be easily obtained. The results provide a novel method for tuning magnetic properties of other L1{sub 0} structured films.

  1. Analysis of waveform from perpendicular magnetic printed media

    NASA Astrophysics Data System (ADS)

    Sheeda, Nurul; Okami, Satoshi; Komine, Takashi; Sugita, Ryuji

    Edge printing is one of the perpendicular magnetic printing methods for writing servo signals with high speed, high accuracy and low cost. Sub-peaks of waveform from edge printed media are concerned as the sub-peaks can cause errors during the read-back process. In this study, in order to reduce sub-peaks, the influence of printing field, bit length and patterned magnetic layer thickness of master medium on sub-peaks is investigated by using a metal-evaporated (ME) tape as a slave medium. The results show that sub-peak to main peak ratio decreases with stronger printing field, smaller bit length and thicker patterned magnetic layer of master media.

  2. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions.

    PubMed

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K; Bapna, Mukund; Majetich, Sara A; Sun, Congli; Voyles, Paul M; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S; Ross, Caroline A

    2016-05-01

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer. PMID:27005330

  3. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Tryputen, Larysa; Tu, Kun-Hua; Piotrowski, Stephan K.; Bapna, Mukund; Majetich, Sara A.; Sun, Congli; Voyles, Paul M.; Almasi, Hamid; Wang, Weigang; Vargas, Patricio; Tresback, Jason S.; Ross, Caroline A.

    2016-05-01

    Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both ‘up’ or both ‘down’ following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

  4. Anomalous enhancement in interfacial perpendicular magnetic anisotropy through uphill diffusion

    NASA Astrophysics Data System (ADS)

    Das, Tanmay; Kulkarni, Prabhanjan D.; Purandare, S. C.; Barshilia, Harish C.; Bhattacharyya, Somnath; Chowdhury, Prasanta

    2014-06-01

    We observed interfacial chemical sharpening due to uphill diffusion in post annealed ultrathin multilayer stack of Co and Pt, which leads to enhanced interfacial perpendicular magnetic anisotropy (PMA). This is surprising as these elements are considered as perfectly miscible. This chemical sharpening was confirmed through quantitative energy dispersive x-ray (EDX) spectroscopy and intensity distribution of images taken on high angle annular dark field (HAADF) detector in Scanning Transmission Electron Microscopic (STEM) mode. This observation demonstrates an evidence of miscibility gap in ultrathin coherent Co/Pt multilayer stacks.

  5. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    PubMed Central

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-01-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108

  6. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.

    PubMed

    Zhang, S F; Gan, W L; Kwon, J; Luo, F L; Lim, G J; Wang, J B; Lew, W S

    2016-01-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line. PMID:27098108

  7. Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire

    NASA Astrophysics Data System (ADS)

    Zhang, S. F.; Gan, W. L.; Kwon, J.; Luo, F. L.; Lim, G. J.; Wang, J. B.; Lew, W. S.

    2016-04-01

    Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~1012 A/m2. Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 1011 A/m2. Micromagnetic simulations reveal the evolution of the domain nucleation – first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.

  8. Giant Perpendicular Magnetic Anisotropy of Graphene-Co Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Hongxin; Hallal, Ali; Chshiev, Mairbek; Spintec theory Team

    We report strongly enhanced perpendicular anisotropy (PMA) of Co films by graphene coating via ab-initio calculations. The results show that graphene coating can improve the surface anisotropy of Co film up to twice large of the bare Co case and keep the film effective anisotropy being out-of-plane till 25 Å of Co, in agreement with experiments. Our layer resolved analysis reveals that PMA of Co (Co/Gr) films mainly originates from the adjacent 3 Co layers close to surface (interface) and can be strongly influenced by graphene. Furthermore, orbital hybridization analysis uncovers the origin of the PMA enhancement which is due to graphene-Co bonding causing an inversion of Co 3dz 2 and 3dx 2 - y 2 Bloch states close to Fermi level. Finally, we propose to design Co-graphene heterostructures which possess a linearly increasing surface anisotropy and a constant effective anisotropy. These findings point towards a possible engineering graphene-Co junctions with giant anisotropy, which stands as a hallmark for future spintronic information processing. This work was supported by European Graphene Flagship, European Union-funded STREP project CONCEPT-GRAPHENE, French ANR Projects NANOSIM-GRAPHENE and NMGEM

  9. SrFeO amorphous underlayer for fabrication of c-axis perpendicularly orientated strontium hexaferrite films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Masoudpanah, S. M.; Ong, C. K.

    2013-09-01

    A thin amorphous SrFeO underlayer on Si(100) substrate was pulse laser deposited as an underlayer for the growth of c-axis perpendicularly oriented strontium hexaferrite (SrFe12O19) films. The amorphous SrFeO underlayer was deposited at different temperatures in the range from room temperature to 700 °C, while the SrFe12O19 film was deposited at 700 °C. The SrFe12O19 films exhibited slightly perpendicular magnetic anisotropy by the rather higher coercivities in perpendicular direction (Hc⊥) than those for the in-plane direction (Hc||), due to the c-axis perpendicular orientation. The magnetization and coercivities of the SrFe12O19 film increase, but the magnetic anisotropy (ΔHc=Hc⊥-Hc||) increases firstly and then decreases, as the SrFeO underlayer deposition temperature increases.

  10. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    PubMed Central

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  11. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy.

    PubMed

    Ma, Q L; Zhang, X M; Miyazaki, T; Mizukami, S

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (K(u)(eff)) over 6 Merg/cm(3) is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and K(u)(eff) of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory. PMID:25597496

  12. Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-01-01

    To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-amplitude-loss. However, materials combining PMA and antiferromagnetism rather than transition-metal/rare-earth system were rarely developed. Here, we develop a new type of ferrimagnetic superlattice exhibiting PMA based on abundant Heusler alloy families. The superlattice is formed by [MnGa/Co2FeAl] unit with their magnetizations antiparallel aligned. The effective anisotropy (Kueff) over 6 Merg/cm3 is obtained, and the SL can be easily built on various substrates with flexible lattice constants. The coercive force, saturation magnetization and Kueff of SLs are highly controllable by varying the thickness of MnGa and Co2FeAl layers. The SLs will supply a new choice for magnetic recording and spintronics memory application such as magnetic random access memory.

  13. Resolving the controversy of a possible relationship between perpendicular magnetic anisotropy and the magnetic damping parameter

    SciTech Connect

    Shaw, Justin M.; Nembach, Hans T.; Silva, T. J.

    2014-08-11

    We use broadband ferromagnetic resonance spectroscopy to systematically measure the Landau-Lifshitz damping parameter, perpendicular anisotropy, and the orbital moment asymmetry in Co{sub 90}Fe{sub 10}/Ni multilayers. No relationship is found between perpendicular magnetic anisotropy and the damping parameter in this material. However, inadequate accounting for inhomogeneous linewidth broadening, spin-pumping, and two-magnon scattering could give rise to an apparent relationship between anisotropy and damping. In contrast, the orbital-moment asymmetry and the perpendicular anisotropy are linearly proportional to each other. These results demonstrate a fundamental mechanism by which perpendicular anisotropy can be varied independently of the damping parameter.

  14. Pulse electrodeposition and electrochemical quartz crystal microbalance techniques for high perpendicular magnetic anisotropy cobalt nanowire arrays

    NASA Astrophysics Data System (ADS)

    Ursache, Andrei; Goldbach, James T.; Russell, Thomas P.; Tuominen, Mark T.

    2005-05-01

    This research is focused on the development of pulse electrodeposition techniques to fabricate a high-density array of vertically oriented, high-magnetic anisotropy cobalt nanowires using a porous polymer film template. This type of array is a competitive candidate for future perpendicular magnetic media capable of storage densities exceeding 1Terabit/in.2 The polymer template, derived from a self-assembling P(S-b-MMA) diblock copolymer film, provides precise control over the nanowire diameter (15nm) and interwire spacing (24nm), whereas nanowire length (typically 50to1000nm) is controlled accurately with the aid of real-time electrochemical quartz crystal monitoring. Pulse and pulse-reversed electrodeposition techniques, as compared to dc, are shown to significantly enhance the perpendicular magnetic anisotropy of the magnetic nanowire array and ultimately result in coercivity as large as 2.7kOe at 300K. Magnetic and structural characterizations suggest that these properties arise from an improved degree of magnetocrystalline anisotropy (due to c-axis oriented crystal growth and improvements in crystal quality) that strongly supplements the basic shape anisotropy of the nanowires. Low temperature magnetometry is used to investigate exchange bias effects due to the incorporation of CoO antiferromagnetic impurities during the electrodeposition process and subsequent Co oxidation in air.

  15. Pulse electrodeposition and electrochemical quartz crystal microbalance techniques for high perpendicular magnetic anisotropy cobalt nanowire arrays

    SciTech Connect

    Ursache, Andrei; Goldbach, James T.; Russell, Thomas P.; Tuominen, Mark T.

    2005-05-15

    This research is focused on the development of pulse electrodeposition techniques to fabricate a high-density array of vertically oriented, high-magnetic anisotropy cobalt nanowires using a porous polymer film template. This type of array is a competitive candidate for future perpendicular magnetic media capable of storage densities exceeding 1 Terabit/in.{sup 2} The polymer template, derived from a self-assembling P(S-b-MMA) diblock copolymer film, provides precise control over the nanowire diameter (15 nm) and interwire spacing (24 nm), whereas nanowire length (typically 50 to 1000 nm) is controlled accurately with the aid of real-time electrochemical quartz crystal monitoring. Pulse and pulse-reversed electrodeposition techniques, as compared to dc, are shown to significantly enhance the perpendicular magnetic anisotropy of the magnetic nanowire array and ultimately result in coercivity as large as 2.7 kOe at 300 K. Magnetic and structural characterizations suggest that these properties arise from an improved degree of magnetocrystalline anisotropy (due to c-axis oriented crystal growth and improvements in crystal quality) that strongly supplements the basic shape anisotropy of the nanowires. Low temperature magnetometry is used to investigate exchange bias effects due to the incorporation of CoO antiferromagnetic impurities during the electrodeposition process and subsequent Co oxidation in air.

  16. Kinetic theory of weak turbulence in magnetized plasmas: Perpendicular propagation

    SciTech Connect

    Yoon, Peter H.

    2015-08-15

    The present paper formulates a weak turbulence theory in which electromagnetic perturbations are assumed to propagate in directions perpendicular to the ambient magnetic field. By assuming that all wave vectors lie in one direction transverse to the ambient magnetic field, the linear solution and second-order nonlinear solutions to the equation for the perturbed distribution function are obtained. Nonlinear perturbed current from the second-order nonlinearity is derived in general form, but the limiting situation of cold plasma temperature is taken in order to derive an explicit nonlinear wave kinetic equation that describes three-wave decay/coalescence interactions among X and Z modes. A potential application of the present formalism is also discussed.

  17. Magnetic and magneto-optical properties of cobalt-platinum alloys with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Weller, D.; Brändle, H.; Gorman, G.; Lin, C.-J.; Notarys, H.

    1992-11-01

    Co1-xPtx alloys with Pt contents in the range 0.45≤x≤0.9 show sizable perpendicular magnetic anisotropy, 100% perpendicular remanence and coercivities in the range 160 kA/m. Thin films of this material are grown by electron beam evaporation onto fused silica or Si, at substrate temperatures between 150 and 350 °C. Spectroscopic investigations of the polar Kerr rotation show a significant enhancement of the Pt related UV peak. A comparison of the static signal levels R×(θk2+ɛk2)1/2 of Co/Pt multilayers and alloys shows an overall 50% enhancement in the case of alloys. Curie temperatures around 200 °C are observed for Co˜22Pt˜78 compositions. These properties, together with the potentially high chemical stability and ease of manufacturing make Co1-xPtx alloys very attractive materials for short wavelength magneto-optic recording.

  18. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m‑1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  19. Perpendicular magnetic anisotropy in FePt/AlN layered structure

    NASA Astrophysics Data System (ADS)

    Zhang, Cong; Sannomiya, Takumi; Muraishi, Shinji; Shi, Ji; Nakamura, Yoshio

    2014-09-01

    FePt/AlN layered structures were deposited onto fused quartz substrate by magnetron sputtering method and found to show in-plane anisotropy. However, annealing of the films leads to a transition of magnetic anisotropy from in-plane to perpendicular direction, and the perpendicular anisotropy gets stronger as the annealing temperature increases. Structural analysis shows that the FePt and AlN layers are textured with (111) and (002) orientations, respectively, along the film normal, and no ordering transformation is found for FePt alloy. To study the origin of the developed anisotropy, stress condition was analyzed with an equal biaxial stress model using X-ray diffraction 2 θ- ω scan method and interface quality was evaluated by X-ray reflectivity measurement and transmission electron microscopy observation. The results reveal that perpendicular magnetic anisotropy of the annealed FePt/AlN layered structure can be attributed to the enhanced interface anisotropy, which is due to flattening of the interfaces through annealing.

  20. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films

    NASA Astrophysics Data System (ADS)

    Toyoki, Kentaro; Shiratsuchi, Yu; Kobane, Atsushi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya; Nakatani, Ryoichi

    2015-04-01

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr2O3/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  1. Field driven ferromagnetic phase evolution originating from the domain boundaries in antiferromagnetically coupled perpendicular anitsotropy films

    SciTech Connect

    Jones, Juanita; Hauet, Thomas; Gunther, Christian; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-05-01

    Strong perpendicular anisotropy systems consisting of Co/Pt multilayer stacks that are antiferromagnetically coupled via thin Ru or NiO layers have been used as model systems to study the competition between local interlayer exchange and long-range dipolar interactions [1,2]. Magnetic Force Microscopy (MFM) studies of such systems reveal complex magnetic configurations with a mix of antiferromagnetic (AF) and ferromagnetic (FM) phases. However, MFM allows detecting surface stray fields only and can interact strongly with the magnetic structure of the sample, thus altering the original domain configuration of interest [3,4]. In the current study they combine magnetometry and state-of-the-art soft X-ray transmission microscopy (MXTM) to investigate the external field driven FM phase evolution originating from the domain boundaries in such antiferromagnetically coupled perpendicular anisotropy films. MXTM allows directly imaging the perpendicular component of the magnetization in an external field at sub 100 nm spatial resolution without disturbing the magnetic state of the sample [5,6]. Here they compare the domain evolution for two similar [Co(4{angstrom})/Pt(7{angstrom})]x-1/{l_brace}Co(4{angstrom})/Ru(9{angstrom})/[Co(4{angstrom})/Pt(7{angstrom})]x-1{r_brace}16 samples with slightly different Co/Pt stack thickness, i.e. slightly different strength of internal dipolar fields. After demagnetization they obtain AF domains with either sharp AF domain walls for the thinner multilayer stacks or 'tiger-tail' domain walls (one dimensional FM phase) for the thicker stacks. When increasing the external field strength the sharp domain walls in the tinner stack sample transform into the one-dimensional FM phase, which then serves as nucleation site for further FM stripe domains that spread out into all directions to drive the system towards saturation. Energy calculations reveal the subtle difference between the two samples and help to understand the observed transition, when

  2. Hysteresis, critical fields and superferromagnetism of the film with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Kalita, V. M.; Kulyk, M. M.; Ryabchenko, S. M.

    2016-08-01

    This paper is focused on the analysis of hysteresis and critical phenomena of magnetization reversal of superferromagnetic (SFM) state in nanogranular (NG) Co/Al2O3 film with perpendicular anisotropy. It was demonstrated that the transition from the multidomain SFM state to the homogeneous SFM state, during the magnetization process, occurs critically. The value of the field of critical transition to the homogeneous state depends on the demagnetization field, granular anisotropy and interparticle exchange anisotropy. It turned out that the temperature dependence of the coercive force of the film, despite its SFM state, accords with the Neel-Brown formula for anisotropic single-domain ferromagnetic particles, but has an anomalous angular dependence. It was concluded that domain wall motion affects these features of the coercive field. The domain wall movement may occur due to the overturn of magnetic moments of particles in the boundaries between the superdomains. At the same time, the main factors influencing the coercivity are the anisotropy of the particles, which blocks their magnetic moment reorientation, and demagnetizing factor of the film. Together they lead to the anomalous angular dependence of the coercive field.

  3. Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Qi; Xu, Xiao-Guang; Wang, Sheng; Wu, Yong; Zhang, De-Lin; Miao, Jun; Jiang, Yong

    2012-10-01

    Microstructures and magnetic properties of Ta/Pt/Co2FeAl (CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy (PMA) of half-metallic full-Heusler alloy films. PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope. It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA. The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature. At the intersection points, the decreasing slope of the saturation magnetization (Ms) changes because of the conversions. The dependence of Ms on the annealing temperature and MgO thickness is also studied.

  4. Critical current destabilizing perpendicular magnetization by the spin Hall effect

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomohiro; Mitani, Seiji; Hayashi, Masamitsu

    2015-07-01

    The critical current needed to destabilize the magnetization of a perpendicular ferromagnet via the spin Hall effect is studied. Both the dampinglike and fieldlike torques associated with the spin current generated by the spin Hall effect are included in the Landau-Lifshitz-Gilbert equation to model the system. In the absence of the fieldlike torque, the critical current is independent of the damping constant and is much larger than that of conventional spin torque switching of collinear magnetic systems, as in magnetic tunnel junctions. With the fieldlike torque included, we find that the critical current scales with the damping constant as α0 (i.e., damping independent), α , and α1 /2 depending on the sign of the fieldlike torque and other parameters such as the external field. Numerical and analytical results show that the critical current can be significantly reduced when the fieldlike torque possesses the appropriate sign, i.e., when the effective field associated with the fieldlike torque is pointing opposite to the spin direction of the incoming electrons. These results provide a pathway to reducing the current needed to switch magnetization using the spin Hall effect.

  5. Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer

    SciTech Connect

    Guo, Peng; Feng, Jiafeng E-mail: jiafengfeng@iphy.ac.cn; Wei, Hongxiang E-mail: jiafengfeng@iphy.ac.cn; Han, Xiufeng; Fang, Bin; Zhang, Baoshun; Zeng, Zhongming

    2015-01-05

    We experimentally study the temperature dependence of the spin-transfer-torque-induced microwave oscillations in MgO-based magnetic tunnel junction nanopillars with a perpendicularly magnetized free layer. We demonstrate that the oscillation frequency increases rapidly with decreasing temperature, which is mainly ascribed to the temperature dependence of both the saturation magnetization and the perpendicular magnetic anisotropy. We also find that a strong temperature dependence of the output power while a nonmonotonic temperature dependence of spectral linewidth are maintained for a constant dc bias in measured temperature range. Possible mechanisms leading to the different dependences of oscillation frequency, output power, and linewidth are discussed.

  6. Origin of Perpendicular Magnetic Anisotropy and Large Orbital Moment in Fe Atoms on MgO.

    PubMed

    Baumann, S; Donati, F; Stepanow, S; Rusponi, S; Paul, W; Gangopadhyay, S; Rau, I G; Pacchioni, G E; Gragnaniello, L; Pivetta, M; Dreiser, J; Piamonteze, C; Lutz, C P; Macfarlane, R M; Jones, B A; Gambardella, P; Heinrich, A J; Brune, H

    2015-12-01

    We report on the magnetic properties of individual Fe atoms deposited on MgO(100) thin films probed by x-ray magnetic circular dichroism and scanning tunneling spectroscopy. We show that the Fe atoms have strong perpendicular magnetic anisotropy with a zero-field splitting of 14.0±0.3  meV/atom. This is a factor of 10 larger than the interface anisotropy of epitaxial Fe layers on MgO and the largest value reported for Fe atoms adsorbed on surfaces. The interplay between the ligand field at the O adsorption sites and spin-orbit coupling is analyzed by density functional theory and multiplet calculations, providing a comprehensive model of the magnetic properties of Fe atoms in a low-symmetry bonding environment. PMID:26684139

  7. Evolution of perpendicular magnetized tunnel junctions upon annealing

    NASA Astrophysics Data System (ADS)

    Devolder, Thibaut; Couet, S.; Swerts, J.; Furnemont, A.

    2016-04-01

    We study the evolution of perpendicularly magnetized tunnel junctions under 300 to 400 °C annealing. The hysteresis loops do not evolve much during annealing and they are not informative of the underlying structural evolutions. These evolutions are better revealed by the frequencies of the ferromagnetic resonance eigenmodes of the tunnel junction. Their modeling provides the exchange couplings and the layers' anisotropies within the stack which can serve as a diagnosis of the tunnel junction state after each annealing step. The anisotropies of the two CoFeB-based parts and the two Co/Pt-based parts of the tunnel junction decay at different rates during annealing. The ferromagnet exchange coupling through the texture-breaking Ta layer fails above 375 °C. The Ru spacer meant to promote a synthetic antiferromagnet behavior is also insufficiently robust to annealing. Based on these evolutions we propose optimization routes for the next generation tunnel junctions.

  8. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Cubukcu, Murat; Boulle, Olivier; Drouard, Marc; Garello, Kevin; Onur Avci, Can; Mihai Miron, Ioan; Langer, Juergen; Ocker, Berthold; Gambardella, Pietro; Gaudin, Gilles

    2014-01-01

    We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

  9. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

    SciTech Connect

    Cubukcu, Murat; Boulle, Olivier; Drouard, Marc; Mihai Miron, Ioan; Gaudin, Gilles; Langer, Juergen; Ocker, Berthold

    2014-01-27

    We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

  10. Perpendicular propagating modes for weakly magnetized relativistic degenerate plasma

    SciTech Connect

    Abbas, Gohar; Bashir, M. F.; Murtaza, G.

    2012-07-15

    Using the Vlasov-Maxwell system of equations, the dispersion relations for the perpendicular propagating modes (i.e., X-mode, O-mode, and upper hybrid mode) are derived for a weakly magnetized relativistic degenerate electron plasma. By using the density (n{sub 0}=p{sub F}{sup 3}/3{pi}{sup 2} Planck-Constant-Over-Two-Pi {sup 3}) and the magnetic field values for different relativistic degenerate environments, the propagation characteristics (i.e., cutoff points, resonances, dispersions, and band widths in k-space) of these modes are examined. It is observed that the relativistic effects suppress the effect of ambient magnetic field and therefore the cutoff and resonance points shift towards the lower frequency regime resulting in enhancement of the propagation domain. The dispersion relations of these modes for the non-relativistic limit (p{sub F}{sup 2} Much-Less-Than m{sub 0}{sup 2}c{sup 2}) and the ultra-relativistic limit (p{sub F}{sup 2} Much-Greater-Than m{sub 0}{sup 2}c{sup 2}) are also presented.

  11. Magneto-Optical Kerr Rotation Spectra and Perpendicular Anisotropy in Compositionally Modulated Multilayer Films of Co/Pt and Fe/Pt

    NASA Astrophysics Data System (ADS)

    Sugimoto, Toshio; Katayama, Toshikazu; Suzuki, Yoshishige; Nishihara, Yoshikazu

    1989-12-01

    Magneto-optical Kerr rotation (θK) spectra and magnetic properties such as saturation magnetization (Ms) and perpendicular magnetic anisotropy of Co/Pt and Fe/Pt compositionally modulated multilayer films (CMF’s) are investigated. An enhancement of θK is observed at the wavelengths of about 290 and 250 nm in Co/Pt and Fe/Pt CMF’s, respectively. It is found that Fe/Pt CMF’s turn into perpendicularly magnetized films in the same manner as Co/Pt CMF’s when the Fe layer becomes thinner than about 5 Å.

  12. High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

    SciTech Connect

    Wang, Yu-Pu; Lim, Sze-Ter; Han, Gu-Chang; Teo, Kie-Leong

    2015-12-21

    Heulser alloys Fe{sub 2}Cr{sub 1−x}Co{sub x}Si (FCCS) with different Co compositions x have been predicted to have high spin polarization. High perpendicular magnetic anisotropy (PMA) has been observed in ultra-thin FCCS films with magnetic anisotropy energy density up to 2.3 × 10{sup 6 }erg/cm{sup 3}. The perpendicular magnetic tunnel junctions (p-MTJs) using FCCS films with different Co compositions x as the bottom electrode have been fabricated and the post-annealing effects have been investigated in details. An attractive tunneling magnetoresistance ratio as high as 51.3% is achieved for p-MTJs using Fe{sub 2}CrSi (FCS) as the bottom electrode. The thermal stability Δ can be as high as 70 for 40 nm dimension devices using FCS, which is high enough to endure a retention time of over 10 years. Therefore, Heusler alloy FCS is a promising PMA candidate for p-MTJ application.

  13. MFM analysis of magnetic inhomogeneity in recorded area for perpendicular magnetic recording media by simultaneous imaging of perpendicular and in-plane magnetic field gradient

    NASA Astrophysics Data System (ADS)

    Yoshimura, Satoru; Egawa, Genta; Miyazawa, Tasuku; Li, Zhenghua; Saito, Hitoshi; Bai, Jianmin; Li, Guoqing

    2011-01-01

    A new MFM method which can measure the perpendicular and in-plane magnetic field gradient simultaneously was developed. The measuring direction of in-plane magnetic field can be easily changed only by selecting the scanning direction of MFM tip with respect to the sample. This method was used to successfully estimate the magnetic domain structure of recorded area on CoCrPt-SiO2 perpendicular magnetic recording media. When the scanning direction is along the down-track direction, the component of strong magnetic field gradient along the down-track direction can be observed with high spatial resolution at the bit transition. On the other hand, when the scanning direction is along the corss-track direction, the new MFM method is effective to mask the component of magnetic field from homogeneous recorded bits, and consequently the components of magnetic field from bended recorded bits at the track edge can be observed. The simultaneous measurement of perpendicular and in-plane magnetic field is useful to evaluate the magnetic inhomogeneity of recorded area such as bit transition and track edge.

  14. Switching Properties of sub-100 nm Perpendicular Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Tryputen, Larysa; Piotrowski, Stephan; Bapna, Mukund; Chien, Chia-Ling; Wang, Weigang; Majetich, Sara; Ross, Caroline

    2015-03-01

    Perpendicular magnetic tunnel junctions (p-MTJs) have great potential for realizing high-density non-volatile memory and logic devices. It is critical to solve scalability problem to implement such devices, to achieve low resistance area and to reduce switching current density while maintaining thermal stability. We present our recent results on fabrication of high resolution Ta/CoFeB/MgO/CoFeB/Ta p-MTJ devices and characterization of their switching properties as well as topography and current mapping by using nanoscale Conductive Atomic Force Microscopy. Our patterning method is based on using hydrogen silsesquioxane resist mask combined with ion beam etching. It allows to fabricate p-MTJ devices down to 40 nm in diameter while maintaining the magnetic quality of the multilayers. Repeatable, consistent switching behaviour has been observed in the obtained p-MTJ devices of 500 nm down to 40 nm with 10 - 800 mV voltage applied. Switching field increased as device diameter decreased, from 580 Oe at 500 nm (MR = 10%) to 410 Oe at 80 nm (MR = 9%). We discuss the effect of device sizes on the switching properties. This work was supported in part by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation Program sponsored by MARCO and DARPA and in part through the National Science Foundation through NCN-Needs Program, Contract 12207020-EEC.

  15. Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures

    SciTech Connect

    Cho, Eikhyun; Shin, Sang Chul; Han, Jungjin; Shim, Jongmyeong; Shin, Ryung; Kang, Shinill; Kim, Sanghoon; Hong, Jongill

    2015-01-26

    We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.

  16. Ionic-liquid gating of perpendicularly magnetised CoFeB/MgO thin films

    NASA Astrophysics Data System (ADS)

    Liu, Y. T.; Agnus, G.; Ono, S.; Ranno, L.; Bernand-Mantel, A.; Soucaille, R.; Adam, J.-P.; Langer, J.; Ocker, B.; Ravelosona, D.; Herrera Diez, L.

    2016-07-01

    We present the modulation of anisotropy field, coercivity, and domain wall (DW) velocity in CoFeB/MgO thin films with perpendicular anisotropy by applying voltages across an ionic liquid gate. Domain wall velocities in the creep regime can be modulated by a factor of 4.2, and the anisotropy field of the device can be modulated by 40 mT when going from +0.8 V to -0.8 V. The applied E-fields are seen to significantly influence DWs' pinning, depinning, and nucleation processes. In addition, we report on the evolution of the magnetic properties of the liquid/solid device as a function of time going from the pristine CoFeB/MgO film through device fabrication and operation up to one month. These results show that the solid/liquid device structure based on CoFeB/MgO thin films can be an efficient way to control magnetic properties with voltages below 1 V.

  17. Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy

    PubMed Central

    Ueno, Tetsuro; Sinha, Jaivardhan; Inami, Nobuhito; Takeichi, Yasuo; Mitani, Seiji; Ono, Kanta; Hayashi, Masamitsu

    2015-01-01

    We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures. PMID:26456454

  18. Magnetic patterning using ion irradiation for highly ordered CoPt alloys with perpendicular anisotropy

    SciTech Connect

    Abes, M.; Venuat, J.; Muller, D.; Carvalho, A.; Schmerber, G.; Beaurepaire, E.; Dinia, A.; Pierron-Bohnes, V.

    2004-12-15

    We used a combination of ion irradiation and e-beam lithography to magnetically pattern an ordered CoPt alloy with strong perpendicular magnetic anisotropy. Ion irradiation disorders the alloy and strongly reduces the magnetic anisotropy. Magnetic force microscopy showed a regular array of 1 {mu}m{sup 2} square dots with perpendicular anisotropy separated by 1 {mu}m large ranges with in-plane anisotropy. This is further confirmed by magnetic measurements, which showed that arrays protected by a 200 nm Pt layer present the same coercive field and the same perpendicular anisotropy as before irradiation. This is promising for applications in magnetic recording technologies.

  19. Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

    SciTech Connect

    You, Chun-Yeol

    2014-01-28

    We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

  20. Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

    NASA Astrophysics Data System (ADS)

    Shepley, P. M.; Rushforth, A. W.; Wang, M.; Burnell, G.; Moore, T. A.

    2015-01-01

    The perpendicular magnetic anisotropy Keff, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. Keff, measured by the extraordinary Hall effect, is reduced by 10 kJ/m3 by tensile strain out-of-plane ɛz = 9 × 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

  1. Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain.

    PubMed

    Shepley, P M; Rushforth, A W; Wang, M; Burnell, G; Moore, T A

    2015-01-01

    The perpendicular magnetic anisotropy K(eff), magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K(eff), measured by the extraordinary Hall effect, is reduced by 10 kJ/m(3) by tensile strain out-of-plane ε(z) = 9 × 10(-4), independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity. PMID:25605499

  2. Synthesis of L1{sub 0}-FePt perpendicular films with controllable coercivity and intergranular exchange coupling by interfacial microstructure control

    SciTech Connect

    Feng Chun; Zhang En; Yang Meiyin; Li Ning; Jiang Yong; Yu Guanghua; Li Baohe

    2010-06-15

    A series of FePtBi/Au multilayers were fabricated by magnetron sputtering. The interfacial microstructure control of Bi and Au atoms and its effect on comprehensive properties of L1{sub 0}-FePt perpendicular films were carefully studied. Results show that: perpendicular magnetic anisotropy of the L1{sub 0}-FePt film can be remarkably enhanced with the epitaxial inducement of Au atoms. On the other hand, intergranular exchange coupling (IEC) of the film is greatly decreased due to the isolation of FePt particles by nonmagnetic Au particles. Moreover, the controllable coercivity of the film can be realized by adjusting ordering degree of the film through diffusion of Bi atoms. Thus, an L1{sub 0}-FePt perpendicular film with controllable coercivity and no IEC is realized with the interfacial microstructure control of surfactant Bi and Au atoms.

  3. Microstructures and perpendicular magnetic properties of Co/Pd multilayers on various metal/MgO seed-layers

    NASA Astrophysics Data System (ADS)

    Kim, Sanghoon; Lee, Sangho; Kim, Joonyong; Kang, Jaeyong; Hong, Jongill

    2011-04-01

    We studied the effects of metal/MgO seeds (metal = Ta, Ru, or Pd) on the crystalline structure and perpendicular magnetic properties of Co/Pd multilayers to investigate the possibility of developing a (100) texture with sufficiently high perpendicular anisotropy and small switching field distributions for applications such as patterned media and perpendicular magnetic random access memories. The Pd/MgO or the MgO seed successfully promoted a (100) texture of Co/Pd multilayers. In particular, the Pd/MgO seed developed a strong (100) texture in the Co/Pd multilayer and resulted in perpendicular magnetic anisotropies ˜2 × 106 erg/cm3. On the other hand, the Co/Pd multilayer with the Ta/MgO or the Ru/MgO seed showed a strong (111) texture, inducing a perpendicular magnetic anisotropy higher than that of the (100) textured films. The coercive fields of Co/Pd multilayers with the (111) texture were over 4 kOe and higher than those with the (100) texture, which were ˜2 kOe when they were patterned into 2 × 2 μm2 islands. The switching field distributions of the Co/Pd multilayers with the (100) texture were smaller than those of the Co/Pd multilayers with the (111) texture. Our findings suggest that the Pd/MgO or the MgO seed can be a template suitable for device applications.

  4. Size-dependent reversal of grains in perpendicular magnetic recording media measured by small-angle polarized neutron scattering

    NASA Astrophysics Data System (ADS)

    Lister, S. J.; Thomson, T.; Kohlbrecher, J.; Takano, K.; Venkataramana, V.; Ray, S. J.; Wismayer, M. P.; de Vries, M. A.; Do, H.; Ikeda, Y.; Lee, S. L.

    2010-09-01

    Polarized small-angle neutron scattering has been used to measure the magnetic structure of a CoCrPt-SiOx thin-film data storage layer, contained within a writable perpendicular recording media, at granular (<10 nm) length scales. The magnetic contribution to the scattering is measured as the magnetization is reversed by an external field, providing unique spatial information on the switching process. A simple model of noninteracting nanomagnetic grains provides a good description of the data and an analysis of the grain-size dependent reversal provides strong evidence for an increase in magnetic anisotropy with grain diameter.

  5. Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Hongxin; Vu, Anh Duc; Hallal, Ali; Rougemaille, Nicolas; Coraux, Johann; Chen, Gong; Schmid, Andreas K.; Chshiev, Mairbek

    2016-01-01

    We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~\\AA. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose super-exchange stabilized Co-graphene heterostructures with a robust out-of-plane constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point towards possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20 times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.

  6. Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures.

    PubMed

    Yang, Hongxin; Vu, Anh Duc; Hallal, Ali; Rougemaille, Nicolas; Coraux, Johann; Chen, Gong; Schmid, Andreas K; Chshiev, Mairbek

    2016-01-13

    We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25 Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis, which help understanding of the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose superexchange stabilized Co-graphene heterostructures with a robust constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point toward possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20-times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies. PMID:26641927

  7. Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

    NASA Astrophysics Data System (ADS)

    Kim, Chang Soo

    The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

  8. Interfacial perpendicular magnetic anisotropy in CoFeB/MgO structure with various underlayers

    NASA Astrophysics Data System (ADS)

    Oh, Young-Wan; Lee, Kyeong-Dong; Jeong, Jong-Ryul; Park, Byong-Guk

    2014-05-01

    Interfacial perpendicular magnetic anisotropy (PMA) in CoFeB/MgO structures was investigated and found to be critically relied on underlayer material and annealing temperature. With Ta or Hf underlayer, clear PMA is observed in as-deposited samples while no PMA was shown in those with Pt or Pd. This may be attributed to smaller saturation magnetization of the films with Ta or Hf underlayer, which makes the PMA of CoFeB/MgO interface dominates over demagnetization field. On the contrary, samples with Pt or Pd demonstrate PMA only after annealing, which might be due to the CoPt (or CoPd) alloy formation that enhances PMA.

  9. Magnetic Nanoparticle Arrays Self-Assembled on Perpendicular Magnetic Recording Media.

    PubMed

    Mohtasebzadeh, Abdul Rahman; Ye, Longfei; Crawford, Thomas M

    2015-01-01

    We study magnetic-field directed self-assembly of magnetic nanoparticles onto templates recorded on perpendicular magnetic recording media, and quantify feature width and height as a function of assembly time. Feature widths are determined from Scanning Electron Microscope (SEM) images, while heights are obtained with Atomic Force Microscopy (AFM). For short assembly times, widths were ~150 nm, while heights were ~14 nm, a single nanoparticle on average with a 10:1 aspect ratio. For long assembly times, widths approach 550 nm, while the average height grows to 3 nanoparticles, ~35 nm; a 16:1 aspect ratio. We perform magnetometry on these self-assembled structures and observe the slope of the magnetic moment vs. field curve increases with time. This increase suggests magnetic nanoparticle interactions evolve from nanoparticle-nanoparticle interactions to cluster-cluster interactions as opposed to feature-feature interactions. We suggest the aspect ratio increase occurs because the magnetic field gradients are strongest near the transitions between recorded regions in perpendicular media. If these gradients can be optimized for assembly, strong potential exists for using perpendicular recording templates to assemble complex heterogeneous materials. PMID:26307967

  10. Magnetic Nanoparticle Arrays Self-Assembled on Perpendicular Magnetic Recording Media

    PubMed Central

    Mohtasebzadeh, Abdul Rahman; Ye, Longfei; Crawford, Thomas M.

    2015-01-01

    We study magnetic-field directed self-assembly of magnetic nanoparticles onto templates recorded on perpendicular magnetic recording media, and quantify feature width and height as a function of assembly time. Feature widths are determined from Scanning Electron Microscope (SEM) images, while heights are obtained with Atomic Force Microscopy (AFM). For short assembly times, widths were ~150 nm, while heights were ~14 nm, a single nanoparticle on average with a 10:1 aspect ratio. For long assembly times, widths approach 550 nm, while the average height grows to 3 nanoparticles, ~35 nm; a 16:1 aspect ratio. We perform magnetometry on these self-assembled structures and observe the slope of the magnetic moment vs. field curve increases with time. This increase suggests magnetic nanoparticle interactions evolve from nanoparticle–nanoparticle interactions to cluster–cluster interactions as opposed to feature–feature interactions. We suggest the aspect ratio increase occurs because the magnetic field gradients are strongest near the transitions between recorded regions in perpendicular media. If these gradients can be optimized for assembly, strong potential exists for using perpendicular recording templates to assemble complex heterogeneous materials. PMID:26307967

  11. Manipulation of magnetic state in nanostructures by perpendicular anisotropy and magnetic field

    SciTech Connect

    Chen, J. P.; Xie, Y. L.; Chu, P.; Wang, Y. L.; Wang, Z. Q.; Gao, X. S.; Liu, J.-M.

    2014-06-28

    We investigate the transitions of spin configurations in ultrathin nanostructures by tuning the perpendicular anisotropy (K{sub z}) and out-of-plane magnetic field (H), using the Monte Carlo simulation. It is revealed that enhancing the anisotropy K{sub z} can drive the evolution of in-plane vortex state into intriguing saturated magnetization states under various H, such as the bubble domain state and quadruple-block-domain state etc. The spin configurations of these states exhibit remarkable H-dependence. In addition, the strong effects of geometry and size on the spin configurations of nanostructures are observed. In particular, a series of edged states occur in the circular disk-shaped lattices, and rich intricate saturated magnetization patterns appear in big lattices. It is suggested that the magnetic states can be manipulated by varying the perpendicular anisotropy, magnetic field, and geometry/size of the nanostructures. Furthermore, the stability (retention capacity) of the saturated magnetization states upon varying magnetic field is predicted, suggesting the potential applications of these saturated magnetization states in magnetic field-controlled data storages.

  12. Non-Axisymmetric Perpendicular Diffusion of Charged Particles and their Transport Across Tangential Magnetic Discontinuities

    NASA Astrophysics Data System (ADS)

    Strauss, R. D.; le Roux, J. A.; Engelbrecht, N. E.; Ruffolo, D.; Dunzlaff, P.

    2016-07-01

    We investigate the transport of charged particles across magnetic discontinuities, focusing specifically on stream interfaces associated with co-rotating interaction regions in the solar wind. We argue that the magnetic field fluctuations perpendicular to the magnetic discontinuity, and usually also perpendicular to the mean magnetic field, are strongly damped in the vicinity of such a magnetic structure, leading to anisotropic perpendicular diffusion. Assuming that perpendicular diffusion arises from drifts in a turbulent magnetic field, we adopt a simplified approach to derive the relevant perpendicular diffusion coefficient. This approach, which we believe gives the correct principal dependences as expected from more elaborate calculations, allows us to investigate transport in different turbulent geometries, such as longitudinal compressional turbulence that may be present near the heliopause. Although highly dependent on the (possibly anisotropic) perpendicular length scales and turbulence levels, we generally find perpendicular diffusion to be strongly damped at magnetic discontinuities, which may in turn provide an explanation for the large particle gradients associated with these structures.

  13. Ion heating perpendicular to the magnetic field. Technical report

    SciTech Connect

    Andre, M.; Chang, T.

    1994-03-28

    Several theories of ion heating perpendicular to the geomagnetic field are briefly reviewed and assessed. Perpendicular heating of ions leading to the formation of ion conics is common in the ionosphere and magnetosphere. Ion conics at altitudes above a few thousand kilometers are often associated with waves around the ion gyrofrequency. It is concluded that the majority of these ion conics that are locally heated or generated over extended altitude regimes, may be best explained by ion cyclotron resonance heating. At lower altitudes, particularly in the region of discrete auroras, energization by turbulence around the lower hybrid frequency seems to be an important heating mechanism.

  14. Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance

    SciTech Connect

    Zhang, Y.; Klein, J.-O.; Chappert, C.; Ravelosona, D.; Zhao, W. S.

    2014-01-20

    High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance.

  15. Solar rotating magnetic dipole?. [around axis perpendicular to rotation axis of the sun

    NASA Technical Reports Server (NTRS)

    Antonucci, E.

    1974-01-01

    A magnetic dipole rotating around an axis perpendicular to the rotation axis of the sun can account for the characteristics of the surface large-scale solar magnetic fields through the solar cycle. The polarity patterns of the interplanetary magnetic field, predictable from this model, agree with the observed interplanetary magnetic sector structure.

  16. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM

    SciTech Connect

    Gottwald, M.; Kan, J. J.; Lee, K.; Zhu, X.; Park, C.; Kang, S. H.

    2015-01-19

    Thermal budget, stack thickness, and dipolar offset field control are crucial for seamless integration of perpendicular magnetic junctions (pMTJ) into semiconductor integrated circuits to build scalable spin-transfer-torque magnetoresistive random access memory. This paper is concerned with materials and process tuning to deliver thermally robust (400 °C, 30 min) and thin (i.e., fewer layers and integration-friendly) pMTJ utilizing Co/Pt-based bottom pinned layers. Interlayer roughness control is identified as a key enabler to achieve high thermal budgets. The dipolar offset fields of the developed film stacks at scaled dimensions are evaluated by micromagnetic simulations. This paper shows a path towards achieving sub-15 nm-thick pMTJ with tunneling magnetoresistance ratio higher than 150% after 30 min of thermal excursion at 400 °C.

  17. Magnetic anisotropy and reversal mechanisms in dual layer exchanged coupled perpendicular media

    NASA Astrophysics Data System (ADS)

    Thomson, T.; Lengsfield, B.; Do, H.; Terris, B. D.

    2008-04-01

    We report the magnetic properties of perpendicular media with a layered structure in which a high anisotropy, segregated, granular CoCrPt-oxide base layer is capped by a lower anisotropy CoCrPt-based film. Anisotropy field (Hk) data show that for the thickness of oxide media studied here, the measured value of Hk remains constant as cap thickness increases. This provides strong evidence that the anisotropy of the composite grain is controlled by the hard oxide layer and is not a simple average of the anisotropy of the oxide and cap layers. The reversal mechanism is explored by determining the angle dependent switching as a function of cap thickness. In the absence of a cap layer, the media show a Stoner-Wohlfarth-like reversal which becomes more Kondorsky-like [1/cos(θ)] when a critical cap thickness is reach, which we interpret as indicating greater lateral exchange coupling.

  18. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field

    PubMed Central

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z. Q.; Hwang, Chanyong

    2014-01-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau–Lifshitz–Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices. PMID:25145837

  19. Duffing oscillation-induced reversal of magnetic vortex core by a resonant perpendicular magnetic field.

    PubMed

    Moon, Kyoung-Woong; Chun, Byong Sun; Kim, Wondong; Qiu, Z Q; Hwang, Chanyong

    2014-01-01

    Nonlinear dynamics of the magnetic vortex state in a circular nanodisk was studied under a perpendicular alternating magnetic field that excites the radial modes of the magnetic resonance. Here, we show that as the oscillating frequency is swept down from a frequency higher than the eigenfrequency, the amplitude of the radial mode is almost doubled to the amplitude at the fixed resonance frequency. This amplitude has a hysteresis vs. frequency sweeping direction. Our result showed that this phenomenon was due to a Duffing-type nonlinear resonance. Consequently, the amplitude enhancement reduced the vortex core-switching magnetic field to well below 10 mT. A theoretical model corresponding to the Duffing oscillator was developed from the Landau-Lifshitz-Gilbert equation to explore the physical origin of the simulation result. This work provides a new pathway for the switching of the magnetic vortex core polarity in future magnetic storage devices. PMID:25145837

  20. Reducing media noise of perpendicular magnetic recording tape for over-50 TB class data cartridge

    NASA Astrophysics Data System (ADS)

    Matsunuma, S.; Inoue, T.; Watanabe, T.; Doi, T.; Gomi, S.; Mashiko, Y.; Hirata, K.; Nakagawa, S.

    2011-04-01

    To reduce medium noise inherent in a perpendicular magnetic recording tape, which is deposited by facing targets sputtering, we have examined an epitaxial double-layered structure consisting of a soft magnetic underlayer (SUL), bcc-FeCoB/fcc-NiFe/Si/bcc-FeCoB, on a 4.5 μm para-aromatic polyamide (aramid) film. An epitaxial soft magnetic bilayer reduces broadband noise by 5.6 dB at 337 kilo fluxchanges per inch (kfci) compared to a single SUL medium (Tape S). This is due to the reduction in the low-frequency noise, which originates from the domain walls of the SUL. Improvement of the crystal orientation of the magnetic layer hcp-CoPtCr-SiO2 and the intermediate layer hcp-Ru by inserting a fcc-NiFe spacer in laminated SULs extends the roll-off curve toward high linear density. When each SUL layer of the bilayer was made thinner, from 25 nm (Tape D2) to 10 nm (Tape D1), the medium noise decreased, improving the signal-to-noise ratio by 8.6 dB at 337 kfci compared to Tape S. In a high resolution playback test of Tape D1, an areal density of 45.0 gigabits per square inch (Gb/in.2) was confirmed. Achieved areal density means the capability of an over-50 terabyte (TB) capacity for a typical linear-formatted data cartridge.

  1. Properties of easy-plane/perpendicular magnetic anisotropy bilayers with varied interlayer exchange coupling

    NASA Astrophysics Data System (ADS)

    Fallarino, Lorenzo; Sluka, Volker; Kardasz, Bartek; Pinarbasi, Mustafa; Kent, Andrew D.

    We explore the possibility of an easy-cone ground state in coupled easy plane/easy axis magnetic bilayers. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFe layer with easy-plane anisotropy separated by a variable thickness Ru layer. Using ferromagnetic resonance spectroscopy, we characterize the magnetic behavior of the coupled thin films for different Ru thicknesses by determining the resonance fields for both the acoustic and optical FMR modes. In particular, we observe a gap in the resonance field opening up between the two modes in angular-dependent FMR, which is direct evidence for the presence of interlayer coupling. Quantitative comparisons with a theoretical model indicate that by varying the Ru thickness the coupling strength can be tuned continuously from ferromagnetic to the anti-ferromagnetic. These results are consistent with a canted magnetic ground state in zero field, a state of interest for applications in spin-torque devices, such as current tunable spin-torque oscillators. Supported by NSF-DMR1309202 and Spin-Transfer Technologies Inc.

  2. Constructive inter-track interference (CITI) codes for perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Ahmed, Mohammed Zaki; Davey, Paul J.; Kurihara, Yoshitake

    2005-02-01

    This paper presents new modulation codes to reduce the effect of adjacent track interference (ATI) also known as inter-track interference (ITI). New modulation codes, that is constructive inter-track interference (CITI) codes and partial response (PR) targets, are investigated using computer simulation in perpendicular magnetic channel. CITI codes have been found to increase the resilience of the perpendicular magnetic channel in the presence of ITI and jitter with no increased decoding complexity.

  3. Tunable exchange bias-like effect in patterned hard-soft two-dimensional lateral composites with perpendicular magnetic anisotropy

    SciTech Connect

    Hierro-Rodriguez, A. Alvarez-Prado, L. M.; Martín, J. I.; Alameda, J. M.; Teixeira, J. M.; Vélez, M.

    2014-09-08

    Patterned hard-soft 2D magnetic lateral composites have been fabricated by e-beam lithography plus dry etching techniques on sputter-deposited NdCo{sub 5} thin films with perpendicular magnetic anisotropy. Their magnetic behavior is strongly thickness dependent due to the interplay between out-of-plane anisotropy and magnetostatic energy. Thus, the spatial modulation of thicknesses leads to an exchange coupled system with hard/soft magnetic regions in which rotatable anisotropy of the thicker elements provides an extra tool to design the global magnetic behavior of the patterned lateral composite. Kerr microscopy studies (domain imaging and magneto-optical Kerr effect magnetometry) reveal that the resulting hysteresis loops exhibit a tunable exchange bias-like shift that can be switched on/off by the applied magnetic field.

  4. Tunable exchange bias-like effect in patterned hard-soft two-dimensional lateral composites with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Hierro-Rodriguez, A.; Teixeira, J. M.; Vélez, M.; Alvarez-Prado, L. M.; Martín, J. I.; Alameda, J. M.

    2014-09-01

    Patterned hard-soft 2D magnetic lateral composites have been fabricated by e-beam lithography plus dry etching techniques on sputter-deposited NdCo5 thin films with perpendicular magnetic anisotropy. Their magnetic behavior is strongly thickness dependent due to the interplay between out-of-plane anisotropy and magnetostatic energy. Thus, the spatial modulation of thicknesses leads to an exchange coupled system with hard/soft magnetic regions in which rotatable anisotropy of the thicker elements provides an extra tool to design the global magnetic behavior of the patterned lateral composite. Kerr microscopy studies (domain imaging and magneto-optical Kerr effect magnetometry) reveal that the resulting hysteresis loops exhibit a tunable exchange bias-like shift that can be switched on/off by the applied magnetic field.

  5. Perpendicular magnetic anisotropy in granular multilayers of CoPd alloyed nanoparticles

    NASA Astrophysics Data System (ADS)

    Vivas, L. G.; Rubín, J.; Figueroa, A. I.; Bartolomé, F.; García, L. M.; Deranlot, C.; Petroff, F.; Ruiz, L.; González-Calbet, J. M.; Pascarelli, S.; Brookes, N. B.; Wilhelm, F.; Chorro, M.; Rogalev, A.; Bartolomé, J.

    2016-05-01

    Co-Pd multilayers obtained by Pd capping of pre-deposited Co nanoparticles on amorphous alumina are systematically studied by means of high-resolution transmission electron microscopy, x-ray diffraction, extended x-ray absorption fine structure, SQUID-based magnetometry, and x-ray magnetic circular dichroism. The films are formed by CoPd alloyed nanoparticles self-organized across the layers, with the interspace between the nanoparticles filled by the non-alloyed Pd metal. The nanoparticles show atomic arrangements compatible with short-range chemical order of L 10 strucure type. The collective magnetic behavior is that of ferromagnetically coupled particles with perpendicular magnetic anisotropy, irrespective of the amount of deposited Pd. For increasing temperature three magnetic phases are identified: hard ferromagnetic with strong coercive field, soft-ferromagnetic as in an amorphous asperomagnet, and superparamagnetic. Increasing the amount of Pd in the system leads to both magnetic hardness increment and higher transition temperatures. Magnetic total moments of 1.77(4) μB and 0.45(4) μB are found at Co and Pd sites, respectively, where the orbital moment of Co, 0.40(2) μB, is high, while that of Pd is negligible. The effective magnetic anisotropy is the largest in the capping metal series (Pd, Pt, W, Cu, Ag, Au), which is attributed to the interparticle interaction between de nanoparticles, in addition to the intraparticle anisotropy arising from hybridization between the 3 d -4 d bands associated to the Co and Pd chemical arrangement in a L 10 structure type.

  6. Performance comparison of post-processor for PRML channel in perpendicular magnetic recording

    NASA Astrophysics Data System (ADS)

    Nakamura, Y.; Okamoto, Y.; Osawa, H.; Muraoka, H.; Nakamura, Y.

    2005-02-01

    In this paper, post-processors for the partial-response maximum-likelihood (PRML) channel combined with the Reed-Solomon (RS) encoder/decoder are studied in perpendicular magnetic recording. The bit error rate (BER) performance is obtained by read/write experiments using a spin-stand with a perpendicular medium and single-pole-type/giant magnetoresistive (SPT/GMR) head. The experimental results show that post-processors improve linear densities of about 10-20 kBPI in perpendicular magnetic recording.

  7. Magnetic interactions in CoCrPt-oxide based perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Tan, H. K.; Varghese, B.; Piramanayagam, S. N.

    2014-10-01

    First order reversal curves (FORC) method has been reported to be an efficient tool to study interaction between grains and layers of magnetic materials. Although a few studies have been carried out on perpendicular recording media in the past, a study on the effect of systematic variation of exchange interaction in granular perpendicular magnetic recording media on FORC contours has not been carried out in detail. Such a study will help to understand the use of FORC better. In this paper, we have made a systematic set of samples in order to study the variation in exchange coupling and its effect on FORC contours. The pressure during the deposition of the second ruthenium layer and the magnetic layer was varied to alter the separation between the grains and hence the exchange interaction between the grains in the CoCrPt-oxide recording layer. In addition, the thickness of Co-alloy cap layer was used as an additional tool to control the exchange interaction between the magnetic grains. The results indicated that the interaction field obtained from the FORC does not vary in a significant manner when the changes in exchange interaction are small. In comparison, the peak intensity of the FORC shows a clear trend as the exchange coupling is varied, making it a more suitable parameter to study the exchange and magnetostatic interactions in systems such as magnetic recording media.

  8. Magnetic interactions in CoCrPt-oxide based perpendicular magnetic recording media

    SciTech Connect

    Tan, H. K.; Varghese, B.; Piramanayagam, S. N.

    2014-10-28

    First order reversal curves (FORC) method has been reported to be an efficient tool to study interaction between grains and layers of magnetic materials. Although a few studies have been carried out on perpendicular recording media in the past, a study on the effect of systematic variation of exchange interaction in granular perpendicular magnetic recording media on FORC contours has not been carried out in detail. Such a study will help to understand the use of FORC better. In this paper, we have made a systematic set of samples in order to study the variation in exchange coupling and its effect on FORC contours. The pressure during the deposition of the second ruthenium layer and the magnetic layer was varied to alter the separation between the grains and hence the exchange interaction between the grains in the CoCrPt-oxide recording layer. In addition, the thickness of Co-alloy cap layer was used as an additional tool to control the exchange interaction between the magnetic grains. The results indicated that the interaction field obtained from the FORC does not vary in a significant manner when the changes in exchange interaction are small. In comparison, the peak intensity of the FORC shows a clear trend as the exchange coupling is varied, making it a more suitable parameter to study the exchange and magnetostatic interactions in systems such as magnetic recording media.

  9. Giant perpendicular magnetic anisotropy of an individual atom on two-dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Odkhuu, Dorj

    2016-08-01

    Exploring magnetism and magnetic anisotropy in otherwise nonmagnetic two-dimensional materials, such as graphene and transition metal dichalcogenides, is at the heart of spintronics research. Herein, using first-principles calculations we explore the possibility of reaching an atomic-scale perpendicular magnetic anisotropy by carefully exploring the large spin-orbit coupling, orbital magnetism, and ligand field in a suitable choice of a two-dimensional structure with transition metal adatoms. More specifically, we demonstrate perpendicular magnetic anisotropy energies up to an order of 100 meV per atom in individual ruthenium and osmium adatoms at a monosulfur vacancy in molybdenum disulfide. We further propose a phenomenological model where a spin state transition that involves hybridization between molybdenum a1 and adatomic e' orbitals is a possible mechanism for magnetization reversal from an in-plane to perpendicular orientation.

  10. Effect of sputtering pressure on stacking fault density and perpendicular magnetic anisotropy of CoPt alloys

    NASA Astrophysics Data System (ADS)

    Park, Kyung-Woong; Oh, Young-Wan; Kim, Dae-Hoon; Kim, Jai-Young; Park, Byong-Guk

    2016-09-01

    We report the effects of Ar sputtering pressure on perpendicular magnetic anisotropy in disordered CoPt alloys via the modulation of stacking fault density. The coercivity and anisotropy field of CoPt alloys are gradually enlarged with an increase in Ar sputtering pressure from 3 mTorr to 30 mTorr. Structural analyses using transmission electron microscopy, atomic force microscopy and x-ray reflectivity show that the structural properties of the samples, such as roughness or grain size, are not significantly changed by variations in Ar sputtering pressure. On the other hand, in-plane x-ray diffraction measurements reveal that the stacking fault density is reduced in films grown under higher pressure, and instead favors HCP stacking. Our results suggest that perpendicular magnetic anisotropy in CoPt alloys can be enhanced by the growth of the sample under a high Ar sputtering pressure, which decreases stacking fault density.

  11. Non-Uniform Switching of the Perpendicular Magnetization in a Spin-Torque Magnetic Nanopillar

    SciTech Connect

    Bernstein, David

    2011-06-01

    Time-resolved scanning transmission x-ray microscopy (STXM) measurements were performed to study the current-induced magnetization switching mechanism in nanopillars exhibiting strong perpendicular magnetic anisotropy (PMA). This technique provides both short time (70 ps) and high spatial (25 nm) resolution. Direct imaging of the magnetization demonstrates that, after an incubation time of {approx} 1.3 ns, a 100 x 300 nm{sup 2} ellipsoidal device switches in {approx} 1 ns via a central domain nucleation and opposite propagation of two domain walls towards the edges. High domain wall velocities on the order of 100m/s are measured. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight into magnetization dynamics during the incubation and reversal period.

  12. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    SciTech Connect

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-04

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  13. Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Cuchet, Léa; Rodmacq, Bernard; Auffret, Stéphane; Sousa, Ricardo C.; Dieny, Bernard

    2014-08-01

    The influence of the bottom and top magnetic electrodes thicknesses on both perpendicular anisotropy and transport properties is studied in (Co/Pt)/Ta/CoFeB/MgO/FeCoB/Ta magnetic tunnel junctions. By carefully investigating the relative magnetic moment of the two electrodes as a function of their thicknesses, we identify and quantify the presence of magnetically dead layers, likely localized at the interfaces with Ta, that is, 0.33 nm for the bottom electrode and 0.60 nm for the top one. Critical thicknesses (spin-reorientation transitions) are determined as 1.60 and 1.65 nm for bottom and top electrodes, respectively. The tunnel magnetoresistance ratio reaches its maximum value, as soon as both effective (corrected from dead layer) electrode thicknesses exceed 0.6 nm.

  14. Magnetic switching time of a Stoner-Wohlfarth particle in a perpendicular bias field

    NASA Astrophysics Data System (ADS)

    Xue, Dong

    This thesis studies magnetic switching of a Stoner-Wholfarth particle. The particle is characterized by a uniaxial magnetic anisotropy, and the magnetic field driving the switching is applied along the anisotropy axis. In addition, a constant small bias field is applied perpendicular to the easy axis. The dynamics of the magnetic moment are studied numerically by solving the Landau-Lifshitz-Gilbert (LLG) equation. Numeric results obtained without any approximations are then compared to the analytic theory of switching time in a perpendicular bias field. A good correspondence between the approximate analytic and exact numeric values of the switching time is observed in a wide parameter region.

  15. Enhancement of perpendicular magnetic anisotropy thanks to Pt insertions in synthetic antiferromagnets

    NASA Astrophysics Data System (ADS)

    Bandiera, S.; Sousa, R. C.; Auffret, S.; Rodmacq, B.; Dieny, B.

    2012-08-01

    Synthetic antiferromagnets are of great interest as reference layers in magnetic tunnel junctions since they allow decreasing the dipolar coupling between the two magnetic electrodes and exhibit larger pinning fields than single reference layers. In this letter, we investigate the effect of the insertion of an ultrathin Pt layer in contact with the Ru spacer in synthetic antiferromagnets with perpendicular magnetic anisotropy. Surprisingly, for Ru thickness below 0.75 nm, the antiferromagnetic coupling amplitude through Ru first increases upon Pt insertion up to a critical Pt thickness (˜0.25 nm) above which coupling decreases. In addition, the corresponding increase of perpendicular magnetic anisotropy enhances the thermal stability of the structure.

  16. Strong perpendicular exchange bias in epitaxial La0.7Sr0.3MnO3:LaFeO3 nanocomposite thin films

    NASA Astrophysics Data System (ADS)

    Fan, Meng; Zhang, Wenrui; Jian, Jie; Huang, Jijie; Wang, Haiyan

    2016-07-01

    Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) (La0.7Sr0.3MnO3)1-x : (LaFeO3)x (LSMO:LFO, x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition. Under a moderate magnetic field cooling, an EB field as high as ˜800 Oe is achieved in the VAN film with x = 0.33, suggesting a great potential for its applications in high density memory devices. Such enhanced EB effects in perpendicular direction can be attributed to the high quality epitaxial co-growth of vertically aligned ferromagnetic LSMO and antiferromagnetic LFO phases, and the vertical interface coupling associated with a disordered spin-glass state. The VAN design paves a powerful way for integrating perpendicular EB effect within thin films and provides a new dimension for advanced spintronic devices.

  17. Experimental and numerical studies on plasma behavior flowing across perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Takezaki, T.; Takahashi, K.; Sasaki, T.; Kikuchi, T.; Harada, N.

    2016-05-01

    To understand particle acceleration mechanisms in a collisionless shock, we have investigated the behaviors of a one-dimensional fast plasma flow in a perpendicular magnetic field by experimental and numerical simulations in a laboratory scale experiment. The velocity of the plasma flow generated by a taper-cone-shaped plasma focus device has varied by the gradient of the perpendicular magnetic field. The plasma flow has accelerated by applying the magnetic field with the negative gradient. To clarify the behavior of the plasma flow in the perpendicular magnetic field, numerical simulations based on an electromagnetic hybrid particle-in-cell (PIC) method have been carried out. These results indicate that the magnetic field gradient affects the plasma flow velocity.

  18. Ru/FeCoB crystalline soft magnetic underlayers with high anisotropy field for CoPtCr-SiO2 granular perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Matsuu, Toshimitsu; Hirata, Ken-ichiro; Hashimoto, Atsuto; Matsunuma, Satoshi; Inoue, Tetsutaro; Doi, Tsugihiro; Nakagawa, Shigeki

    2009-04-01

    Ru/FeCoB/Ru/CoPtCr-SiO2 films were fabricated as perpendicular magnetic recording media with crystalline soft magnetic underlayer (SUL). Ru/FeCoB layers possessed high in-plane anisotropy field Hk of 400 Oe and a bcc-FeCo (110) orientation. Crystalline orientation of the FeCoB in the SUL affected on a crystallite growth of a Ru intermediate layer deposited on it and on crystallite orientation of the CoPtCr-SiO2 film deposited on the Ru intermediate layer. Ru/CoPtCr-SiO2 films without Ru/FeCoB SULs exhibited a random orientation of Ru crystallites and the in-plane magnetic anisotropy. On the other hand, Ru/CoPtCr-SiO2 films deposited on the Ru/FeCoB SULs exhibited (001) preferential orientations of the CoPtCr as well as the Ru intermediate layer and possessed perpendicular magnetic anisotropy. It was confirmed that the improvement of a bcc-FeCo (110) orientation in the SUL was effective to the improvement of a hcp-Ru (001) orientation. At the media for an intermediate layer thickness of 5 nm, the similar magnetic properties as that of 30 nm were obtained. It indicated that the application of a crystalline SUL promoted the reduction in the intermediate layer thickness.

  19. Clusters of interacting single domain Co nanomagnets for multistate perpendicular magnetic media applications

    NASA Astrophysics Data System (ADS)

    Xiao, Qijun; Yang, Tianyu; Ursache, Andrei; Tuominen, Mark T.

    2008-04-01

    In this work we develop prototype elements for multistate (beyond binary) perpendicular data storage using interacting nanomagnet clusters. This experimental work confirms earlier theoretical work that predicted multiple discrete values of stable remanent magnetization for such clusters. The fabrication scheme is based on ultrahigh resolution electron beam lithography performed on a thin suspended silicon nitride membrane to reduce the secondary backscattered electrons from the substrate. A Co nanomagnet cluster array is deposited into the nanotemplate via pulse-reverse electrodeposition to create nanomagnets with the favored uniaxial perpendicular anisotropy. Magnetic force microscopy (MFM) measurements show the perpendicular magnetization of individual Co nanomagnets and the combined multiconfiguration behavior of a nanomagnet cluster. In concept, the discrete values of net remanent magnetization of the cluster, which represent distinct information states, can be "programmed" by a uniform applied field.

  20. Accelerated ions from pulsed-power-driven fast plasma flow in perpendicular magnetic field

    NASA Astrophysics Data System (ADS)

    Takezaki, Taichi; Takahashi, Kazumasa; Sasaki, Toru; Kikuchi, Takashi; Harada, Nob.

    2016-06-01

    To understand the interaction between fast plasma flow and perpendicular magnetic field, we have investigated the behavior of a one-dimensional fast plasma flow in a perpendicular magnetic field by a laboratory-scale experiment using a pulsed-power discharge. The velocity of the plasma flow generated by a tapered cone plasma focus device is about 30 km/s, and the magnetic Reynolds number is estimated to be 8.8. After flow through the perpendicular magnetic field, the accelerated ions are measured by an ion collector. To clarify the behavior of the accelerated ions and the electromagnetic fields, numerical simulations based on an electromagnetic hybrid particle-in-cell method have been carried out. The results show that the behavior of the accelerated ions corresponds qualitatively to the experimental results. Faster ions in the plasma flow are accelerated by the induced electromagnetic fields modulated with the plasma flow.

  1. Antiferromagnetic iridium manganese based intermediate layers for perpendicular magnetic recording media

    NASA Astrophysics Data System (ADS)

    Srinivasan, Kumar; Piramanayagam, S. N.; Sbiaa, Rachid

    2008-08-01

    Current generation CoCrPt oxide based perpendicular magnetic recording media use two Ru-based intermediate layers in order to grow crystallographically textured, and magnetically isolated granular media. In this work, the advantage of replacing the Ru grain isolation layer with antiferromagnetic IrMn is demonstrated. Media samples using 7.5nm thick IrMn intermediate layers show perpendicular texture with dispersion below 4°, coercivity of over 4000Oe alongside magnetic exchange decoupling, average grain sizes of 6nm with distributions under 14%, and thermal stability factor of 88. The IrMn layer may also help to stabilize the recording layer grains against thermal instability effects.

  2. Perpendicular magnetic anisotropy in Fe2Cr1 - xCoxSi Heusler alloy

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Pu; Qiu, Jin-Jun; Lu, Hui; Ji, Rong; Han, Gu-Chang; Teo, Kie-Leong

    2014-12-01

    Perpendicular magnetic anisotropy (PMA) was achieved in annealed Fe2Cr1 - xCoxSi (FCCS) Heusler alloys with different Co compositions x. The Co composition is varied to tune the Fermi level in order to achieve both higher spin polarization and better thermal stability. The PMA is thermally stable up to 400 oC for FCCS with x = 0, 0.3, 0.5 and 350 oC for FCCS with x = 0.7, 0.9, 1. The thickness of FCCS films with PMA ranges from 0.6 to 1.2 nm. The annealing temperature and FCCS thickness are found to greatly affect the PMA. The magnetic anisotropy energy density KU is 2.8  ×  106 erg cm-3 for 0.8 nm Fe2CrSi, and decreases as the Co composition x increases, suggesting that the PMA induced at the FCCS/MgO interface is dominated by the contribution of Fe atoms. There is a trade-off between high spin polarization and strong PMA by adjusting the Co composition.

  3. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  4. The perpendicular electron energy flux driven by magnetic fluctuations in the edge of TEXT-U

    SciTech Connect

    Fiksel, G.; Prager, S.C.; Bengtson, R.D.; Wootton, A.J.

    1995-06-12

    A fast bolometer was used for direct measurements of parallel electron energy flux in the edge of TEXT-U. The fluctuating component of the parallel electron energy flux, combined with a measurement of magnetic fluctuations, provides an upper limit to the perpendicular electron flux. This magnetically driven energy flux cannot account for the observed energy flux.

  5. Three-wave coupling coefficients for perpendicular wave propagation in a magnetized plasma

    SciTech Connect

    Brodin, G.; Stenflo, L.

    2015-10-15

    The resonant interaction between three waves in a uniform magnetized plasma is reconsidered. Starting from previous kinetic expressions, we limit our investigation to waves propagating perpendicularly to the external magnetic field. It is shown that reliable results can only be obtained in the two-dimensional case, i.e., when the wave vectors have both x and y components.

  6. Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Ma, Q. L.; Zhang, X. M.; Miyazaki, T.; Mizukami, S.

    2015-08-01

    The ferrimagnetic superlattice (SL) [MnGa/Co2FeAl]n exhibiting perpendicular magnetic anisotropy opened a new method for spintronics materials used in magnetic random access memory, because of the high anisotropy, small damping constant and tunable magnetization. In this work, we fabricated SLs with different MnGa composition and studied the MnGa composition dependence of the structure and magnetic properties of the SLs. Furthermore, we fabricated fully perpendicular magnetic tunnel junctions with SLs as both top and bottom electrodes. A clear tunnel magnetoresistance (TMR) effect with TMR ratio of 1.3% at room temperature was observed.

  7. Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Ho, Pin; Tu, Kun-Hua; Zhang, Jinshuo; Sun, Congli; Chen, Jingsheng; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Voyles, Paul M.; Ross, Caroline A.

    2016-02-01

    Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems.Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ~75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the

  8. Experimental evidence of skyrmion-like configurations in bilayer nanodisks with perpendicular magnetic anisotropy

    SciTech Connect

    Stebliy, Maxim E. Kolesnikov, Alexander G.; Davydenko, Alexander V.; Ognev, Alexey V.; Samardak, Alexander S.; Chebotkevich, Ludmila A.

    2015-05-07

    Formation and existence of magnetic skyrmion-like configurations in bilayer nanodisks (Ta(3 nm)/[Co(0.37 nm)/Ni(0.58 nm)]{sub 10}){sub 2} with perpendicular magnetic anisotropy are shown experimentally at room temperature. Magnetization reversal through the skyrmion state is studied using magnetic hysteresis measurements. An evolution of skyrmion configurations in the nanodisk structure is analyzed. Experimental methods and micromagnetic simulations help to understand the magnetization reversal processes occurring through the stable skyrmion-like configurations. Formation of the intermediate C-states during magnetization reversal is demonstrated. The skyrmion number for all possible spin configurations is calculated.

  9. Engineering spin-orbit torque in Co/Pt multilayers with perpendicular magnetic anisotropy

    SciTech Connect

    Huang, Kuo-Feng; Wang, Ding-Shuo; Lai, Chih-Huang; Lin, Hsiu-Hau

    2015-12-07

    To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stability and high spin-orbit-torque efficiency simultaneously in the multilayers structure.

  10. Coexistence of perpendicular and in-plane exchange bias using a single ferromagnetic layer in Pt/Co/Cr/CoO thin film

    NASA Astrophysics Data System (ADS)

    Öztürk, Mustafa; Demirci, Erdem; Erkovan, Mustafa; Öztürk, Osman; Akdoğan, Numan

    2016-04-01

    We studied the temperature dependence of magnetization and exchange bias in a Pt/Co/Cr/CoO multilayer thin film. These magnetic multilayers are of particular interest since the easy axis of ultra-thin Co is strongly affected by the interfacial anisotropies of neighbouring Pt and Cr layers. The room temperature measurements show that the sample has a magnetic easy axis only in the film plane. However, upon cooling the sample, the easy axis of the magnetization departs from its initial orientation and typical easy-axis hysteresis loops are obtained for both in-plane and perpendicular directions. In accordance with this change in the magnetization direction at lower temperatures, the sample shows an unexpected coexistence of perpendicular and in-plane exchange bias below the antiferromagnetic transition of CoO. The temperature dependence of the exchange bias field for both directions is also significantly different. Along the film plane, the exchange bias field monotonically decreases and disappears at 220 K with increasing temperature. For the perpendicular direction, however, the exchange bias field increases and reaches a maximum value at 80 K. Then it decreases and disappears at 150 K with further increasing temperature. The mechanisms behind this anomalous temperature dependence of the exchange bias as well as the step-like behaviour in the hysteresis curves are discussed.

  11. Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Tao, B. S.; Li, D. L.; Yuan, Z. H.; Liu, H. F.; Ali, S. S.; Feng, J. F.; Wei, H. X.; Han, X. F.; Liu, Y.; Zhao, Y. G.; Zhang, Q.; Guo, Z. B.; Zhang, X. X.

    2014-09-01

    Magnetic properties of Co40Fe40B20 (CoFeB) thin films sandwiched between Ta and MgAl2O4 layers have been systematically studied. For as-grown state, Ta/CoFeB/MgAl2O4 structures exhibit good perpendicular magnetic anisotropy (PMA) with interface anisotropy Ki = 1.22 erg/cm2, which further increases to 1.30 erg/cm2 after annealing, while MgAl2O4/CoFeB/Ta multilayer shows in-plane magnetic anisotropy and must be annealed in order to achieve PMA. For bottom CoFeB layer, the thickness window for PMA is from 0.6 to 1.0 nm, while that for top CoFeB layer is between 0.8 and 1.4 nm. Perpendicular magnetic tunnel junctions (p-MTJs) with a core structure of CoFeB/MgAl2O4/CoFeB have also been fabricated and tunneling magnetoresistance ratio of about 36% at room temperature and 63% at low temperature have been obtained. The intrinsic excitations in the p-MTJs have been identified by inelastic electron-tunneling spectroscopy.

  12. Perpendicular magnetic anisotropy and magneto-optical Kerr effect of vapor-deposited Co/Pt-layered structures

    NASA Astrophysics Data System (ADS)

    Zeper, W. B.; Greidanus, F. J. A. M.; Carcia, P. F.; Fincher, C. R.

    1989-06-01

    We prepared by vapor deposition at room temperature thin (500 Å) Co/Pt multilayers or layered structures directly onto glass or Si substrates. They show a preferential magnetization perpendicular to the film plane for Co thicknesses below 12 Å and a 100% perpendicular remanence for Co thicknesses below 4.5 Å. The magnetic anisotropy can be explained by an interface contribution to the anisotropy. We also investigated the magneto-optical (MO) polar Kerr effect of these multilayers. Because of their excellent magnetic properties and their potentially high oxidation and corrosion resistance, these Co/Pt-layered structures are very promising candidates for MO recording. The Kerr rotation θk at λ=820 nm for a 35×(4.0 Å Co+12.7 Å Pt)-layered structure, which has 100% magnetic remanence, is modest (-0.12°), but the reflectivity R is high (70%), which results in a respectable figure of merit Rθ2k. Furthermore, the Kerr effect increases towards shorter wavelengths and thus favors future higher-density recording.

  13. Domain configurations in Co/Pd and L10-FePt nanowire arrays with perpendicular magnetic anisotropy.

    PubMed

    Ho, Pin; Tu, Kun-Hua; Zhang, Jinshuo; Sun, Congli; Chen, Jingsheng; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Voyles, Paul M; Ross, Caroline A

    2016-03-01

    Perpendicular magnetic anisotropy [Co/Pd]15 and L10-FePt nanowire arrays of period 63 nm with linewidths 38 nm and 27 nm and film thickness 27 nm and 20 nm respectively were fabricated using a self-assembled PS-b-PDMS diblock copolymer film as a lithographic mask. The wires are predicted to support Néel walls in the Co/Pd and Bloch walls in the FePt. Magnetostatic interactions from nearest neighbor nanowires promote a ground state configuration consisting of alternating up and down magnetization in adjacent wires. This was observed over ∼75% of the Co/Pd wires after ac-demagnetization but was less prevalent in the FePt because the ratio of interaction field to switching field was much smaller. Interactions also led to correlations in the domain wall positions in adjacent Co/Pd nanowires. The reversal process was characterized by nucleation of reverse domains, followed at higher fields by propagation of the domains along the nanowires. These narrow wires provide model system for exploring domain wall structure and dynamics in perpendicular anisotropy systems. PMID:26883011

  14. Effect of Palladium Nuclei Insertion by Electroless Deposition on Magnetic Intergranular Isolation and Read/Write Characteristics in SmCo5 Perpendicular Magnetic Recording Media

    NASA Astrophysics Data System (ADS)

    Sugiyama, Atsushi; Egawa, Yuko; Koizumi, Isao; Yoshino, Masahiro; Hokkyo, Jiro; Asahi, Toru; Kiya, Takanori; Ariake, Jun; Ouchi, Kazuhiro; Osaka, Tetsuya

    In order to improve the magnetic intergranular isolation between the magnetic grains in the SmCo5 perpendicular magnetic recording media, the palladium nuclei deposited by an electrochemical process were introduced into a sputter deposition process of the SmCo5 film. A few nanometer size Pd nuclei were electrochemically deposited on the sputtered Cu underlayer by a displacement deposition (chemical plating). The sizes of Pd nuclei were controlled by adjusting the Pd ion concentration in electrolyte solutions. The magnetic domain size in Sm-Co layer deposited on Pd nuclei / Cu / Ti underlayer became smaller and the magnetization reversal process was changed from the wall motion to the coherent rotation. Moreover, the read/write characteristics were improved at higher linear recording densities.

  15. Spring magnet films.

    SciTech Connect

    Bader, S. D.; Fullerton, E. E.; Gornakov, V. S.; Inomata, A.; Jiang, J. S.; Nikitenko, V. I.; Shapiro, A. J.; Shull, R. D.; Sowers, C. H.

    1999-03-29

    The properties of exchange-spring-coupled bilayer and superlattice films are highlighted for Sm-Co hard magnet and Fe or Co soft magnet layers. The hexagonal Sm-Co is grown via magnetron sputtering in a- and b-axis epitaxial orientations. In both cases the c-axis, in the film plane, is the easy axis of magnetization. Trends in coercivity with film thickness are established and related to the respective microstructure of the two orientations. The magnetization reversal process for the bilayers is examined by magnetometry and magneto-optical imaging, as well as by simulations that utilize a one-dimensional model to provide the spin configuration for each atomic layer. The Fe magnetization is pinned to that of the Sm-Co at the interface, and reversal proceeds via a progressive twisting of the Fe magnetization. The Fe demagnetization curves are reversible as expected for a spring magnet. Comparison of experiment and simulations indicates that the spring magnet behavior can be understood from the intrinsic properties of the hard and soft layers. Estimated are made of the ultimate gain in performance that can potentially be realized in this system.

  16. Wave packet revivals in a graphene quantum dot in a perpendicular magnetic field

    SciTech Connect

    Torres, J. J.

    2010-10-15

    We study the time evolution of localized wave packets in graphene quantum dots in a perpendicular magnetic field, focusing on the quasiclassical and revival periodicities, for different values of the magnetic field intensities in a theoretical framework. We have considered contributions of the two inequivalent points in the Brillouin zone. The revival time has been found as an observable that shows the break valley degeneracy.

  17. Enhanced current quantization in high-frequency electron pumps in a perpendicular magnetic field

    SciTech Connect

    Wright, S. J.; Blumenthal, M. D.; Gumbs, Godfrey; Thorn, A. L.; Pepper, M.; Anderson, D.; Jones, G. A. C.; Nicoll, C. A.; Ritchie, D. A.; Janssen, T. J. B. M.; Holmes, S. N.

    2008-12-15

    We present experimental results of high-frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.

  18. Electron acceleration by parallel and perpendicular electric fields during magnetic reconnection without guide field

    NASA Astrophysics Data System (ADS)

    Bessho, N.; Chen, L.-J.; Germaschewski, K.; Bhattacharjee, A.

    2015-11-01

    Electron acceleration due to the electric field parallel to the background magnetic field during magnetic reconnection with no guide field is investigated by theory and two-dimensional electromagnetic particle-in-cell simulations and compared with acceleration due to the electric field perpendicular to the magnetic field. The magnitude of the parallel electric potential shows dependence on the ratio of the plasma frequency to the electron cyclotron frequency as (ωpe/Ωe)-2 and on the background plasma density as nb-1/2. In the Earth's magnetotail, the parameter ωpe/Ωe˜9 and the background (lobe) density can be of the order of 0.01 cm-3, and it is expected that the parallel electric potential is not large enough to accelerate electrons up to 100 keV. Therefore, we must consider the effect of the perpendicular electric field to account for electron energization in excess of 100 keV in the Earth's magnetotail. Trajectories for high-energy electrons are traced in a simulation to demonstrate that acceleration due to the perpendicular electric field in the diffusion region is the dominant acceleration mechanism, rather than acceleration due to the parallel electric fields in the exhaust regions. For energetic electrons accelerated near the X line due to the perpendicular electric field, pitch angle scattering converts the perpendicular momentum to the parallel momentum. On the other hand, for passing electrons that are mainly accelerated by the parallel electric field, pitch angle scattering converting the parallel momentum to the perpendicular momentum occurs. In this way, particle acceleration and pitch angle scattering will generate heated electrons in the exhaust regions.

  19. Superferromagnetism in dipolarly coupled L10 FePt nanodots with perpendicular magnetization

    NASA Astrophysics Data System (ADS)

    Bedanta, S.; Seki, T.; Iwama, H.; Shima, T.; Takanashi, K.

    2015-10-01

    The magnetization reversal for perpendicularly magnetized L10-FePt (001) nanodots with different interdot distances was studied by magnetic domain observation. We show the results for two kinds of dot arrays: (i) the dots with physical percolation leading to direct exchange coupling, and (ii) the dots which are fully isolated experiencing only dipolar interaction. For the physically percolated dot array, ferromagnetic domains were observed in which domain expanded with magnetic field. On the other hand, the array with the isolated FePt dots also exhibited domain like features resembling to the percolated dots, indicating the existence of superferromagnetism in the array of FePt nanodots.

  20. Perpendicular currents and electric fields in fully and partially ionized magnetized plasma

    SciTech Connect

    Rozhansky, V.

    2013-10-15

    Perpendicular currents and self-consistent electric fields in fully and partially ionized plasma in strong magnetic field are analyzed. In fully ionized plasma, the analyses are concentrated on closing of viscosity driven currents. For partially ionized plasma, it is demonstrated that the perpendicular currents could be expressed through the total pressure gradient (including the pressure gradient of neutral particles) and viscosity of neutrals. The self-consistent electric fields and corresponding E(vector sign)×B(vector sign) could be quite large, which is important for various applications, in particular, for the divertor plasma of a tokamak in the detached regime.

  1. Composition-tuned magneto-optical Kerr effect in L10-Mn x Ga films with giant perpendicular anisotropy

    NASA Astrophysics Data System (ADS)

    Zhu, L. J.; Brandt, L.; Zhao, J. H.; Woltersdorf, G.

    2016-06-01

    We report the large polar magnetooptical Kerr effect in L10-Mn x Ga (0.76  ⩽  x  ⩽  1.29) epitaxial films with giant perpendicular magnetic anisotropy. The Kerr rotation is enhanced by a factor of up to 2.5 by decreasing Mn atomic concentration, which most likely arises from the variation of the effective spin–orbit coupling strength, compensation effect of magnetic moments at different Mn atom sites, and overall strain. A significant tuning effect of composition is also observed on Kerr ellipticity and complex Kerr angle (including the magnitude and phase angle). The good epitaxial compatibility with semiconductors, moderate coercivity of 4.6–9.7 kOe, large Kerr rotation of up to 0.10°, high reflectivity of 35%–55% in a wide wavelength range of 400 ~ 850 nm, and giant magnetic anisotropic field of up to 140 kOe together make these L10-Mn x Ga films promising for scientific and technological applications in spintronics and terahertz-frequency magnetooptical modulators.

  2. Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

    SciTech Connect

    Cheng, Hongguang Deng, Ning

    2013-12-15

    We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10{sup −9} can be achieved for the device of thermal stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.

  3. Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field

    PubMed Central

    2011-01-01

    We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island from source and drain graphene contacts. Lateral graphene gates are used to electrostatically tune the device. Measurements of Coulomb resonances, including constriction resonances and Coulomb diamonds prove the functionality of the graphene quantum dot with a charging energy of approximately 4.5 meV. We show the evolution of Coulomb resonances as a function of perpendicular magnetic field, which provides indications of the formation of the graphene specific 0th Landau level. Finally, we demonstrate that the complex pattern superimposing the quantum dot energy spectra is due to the formation of additional localized states with increasing magnetic field. PMID:21711781

  4. Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

    SciTech Connect

    Honjo, H. Nebashi, R.; Tokutome, K.; Miura, S.; Sakimura, N.; Sugibayashi, T.; Fukami, S.; Kinoshita, K.; Murahata, M.; Kasai, N.; Ishihara, K.; Ohno, H.

    2014-05-07

    We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.

  5. Perpendicular magnetic tunnel junction with enhanced anisotropy obtained by utilizing an Ir/Co interface

    NASA Astrophysics Data System (ADS)

    Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

    2016-01-01

    A highly scalable perpendicularly magnetized storage layer of a spin-torque-switching magnetic random-access memory (STT-MRAM) was developed. This storage layer attains a perpendicular magnetic anisotropy (PMA) of above 0.9 erg/cm2 at a thickness of 2 nm. Such high PMA is suitable for pushing STT-MRAM technology beyond the 20 nm node. The key was to realize dual interfacial PMA at both the Ir/Co and FeB/MgO interfaces in the united structure of the storage layer. While a high PMA was retained, a high magnetoresistance ratio (100%) and a low resistance-area product (3.0 Ω µm2) were also achieved.

  6. Composition Mapping of Co-Pt-Ti-O Perpendicular Magnetic Recording Media by Simultaneous EDS and EELS Spectrum Imaging

    SciTech Connect

    Bentley, James; Risner, Juliet D.; Sinclair, Prof. Robert

    2007-01-01

    For nearly a decade core-loss elemental mapping by energy-filtered transmission electron microscopy (EFTEM) with {approx}1 nm resolution has contributed greatly to the understanding of Co(Cr)-based thin-film longitudinal magnetic recording media for computer hard disks. Intergranular layers of non-ferromagnetic Cr-enriched material a few nanometers thick are critical for optimum performance since they decouple the magnetic exchange between grains allowing the magnetization within individual grains to be switched independently, as required for high-density recording of data. Modern perpendicular thin-film recording media, which allow higher recording densities than traditional longitudinal media, have a similar columnar grain structure with nonferromagnetic material separating and decoupling the grains. The present work involves plan-view TEM characterization of back-thinned Co-Pt media (Co/Pt{approx}4) with 6 levels of co-sputtered TiO{sub 2} from 0 to 43 vol%. The layer structure of the media was: polished Al substrate/6 nm seed layers/50 nm soft magnetic underlayer/14 nm Ru underlayer/12 nm Co-Pt-TiO{sub 2}/1 nm C overcoat.

  7. Ordered mesoporous silica films with pores oriented perpendicular to a titanium nitride substrate.

    PubMed

    Robertson, Calum; Beanland, Richard; Boden, Stuart A; Hector, Andrew L; Kashtiban, Reza J; Sloan, Jeremy; Smith, David C; Walcarius, Alain

    2015-02-14

    The production of thin mesoporous silica films with small (∼2-3 nm) pores oriented perpendicular to a titanium nitride growth surface is demonstrated using two methods. These are the growth from a Stöber silica solution with surfactant ordering at the surface of the electrode, and electrochemically assisted growth from an acidic sol achieved by polarisation of the electrode surface. The thickness, pore order and pore size that can be achieved with these two methods is contrasted. A number of methods to vary the pore size by using different surfactants and swelling agents are explored. The advantage of applying these growth methods on titanium nitride surfaces is that it provides access to a wider electrochemical window for nanowire growth and sensor applications with non-aqueous electrolytes whilst retaining good film growth and adhesion properties. PMID:25589465

  8. Rapid microwave annealing for perpendicular oriented cylinders in PS- b-PMMA thin films

    NASA Astrophysics Data System (ADS)

    Qiang, Zhe; Cavicchi, Kevin; Vogt, Bryan; University of Akron Team

    Self-assembly of block copolymer (BCP) has been extensively studied for decades due to their wide range of potential applications such as lithography. Direct microwave annealing provides rapid ordering kinetics. However, the knowledge regarding the structural and orientation evolution of morphology during microwave annealing without solvents remains sparse. Herein, we report on how microwave-annealing conditions impact the morphology developed in cylinder forming PS-b-PMMA films on unmodified silicon wafers. The fraction of perpendicular cylinders developed during microwave annealing is primarily determined by temperature ramp from microwave heating itself. The heating of the substrate during microwave annealing is varied from 0.5 °C/s to 2.8 °C/s by two factors: (1) the microwave output energy and (2) the local heating position of BCP film in the microwave reaction vessel. A maximum in the fraction of perpendicular cylinders (97 %) occurs at 1.83 °C/s and appears independent of the microwave power used. This work demonstrates the importance of controlling conditions of microwave annealing in the morphology developed.

  9. Strong perpendicular exchange bias in epitaxial La(0.7)Sr(0.3)MnO3:BiFeO3 nanocomposite films through vertical interfacial coupling.

    PubMed

    Zhang, Wenrui; Chen, Aiping; Jian, Jie; Zhu, Yuanyuan; Chen, Li; Lu, Ping; Jia, Quanxi; MacManus-Driscoll, Judith L; Zhang, Xinghang; Wang, Haiyan

    2015-09-01

    An exchange bias effect with perpendicular anisotropy is of great interest owing to potential applications such as read heads in magnetic storage devices with high thermal stability and reduced dimensions. Here we report a novel approach for achieving perpendicular exchange bias by orienting the ferromagnetic/antiferromagnetic coupling in the vertical geometry through a unique vertically aligned nanocomposite (VAN) design. Our results demonstrate robust perpendicular exchange bias phenomena in micrometer-thick films employing a prototype material system of antiferromagnetic BiFeO3 and ferromagnetic La0.7Sr0.3MnO3. The unique response of exchange bias to a perpendicular magnetic field reveals the existence of exchange coupling along their vertical heterointerfaces, which exhibits a strong dependence on their strain states. This VAN approach enables a large selection of material systems for achieving perpendicular exchange bias, which could lead to advanced spintronic devices. PMID:26222013

  10. Ultra Low Energy Switching of Ferromagnet with Perpendicular Anisotropy on Topological Insulator by Voltage Controlled Magnetic Anisotropy

    NASA Astrophysics Data System (ADS)

    Ghosh, Bahniman; Pramanik, Tanmoy; Dey, Rik; Roy, Urmimala; Register, Leonard; Banerjee, Sanjay

    2015-03-01

    We propose and demonstrate, through simulation, an ultra low energy memory device on a topological insulator thin film. The device consists of a thin layer of Fe deposited on the surface of a topological insulator, Bi2Se3. The top surface of Fe is covered with MgO so that the ferromagnetic layer has perpendicular anisotropy. Current is passed on the surface of the topological insulator which switches the magnetization of the Fe ferromagnet through strong exchange interaction, between electrons contributing to the surface current on the Bi2Se3 and the d electrons in the ferromagnet, and spin transfer torque due to shunting of current through the ferromagnet. Voltage controlled magnetic anisotropy enables ultra low energy switching. Our micromagnetic simulations, predict switching time of the order of 2.4 ns and switching energy of the order of 0.16 fJ for a ferromagnetic bit with thermal stability of 90 kBT. The proposed structure combines the advantages of both large spin torque from topological insulators and those of perpendicular anisotropy materials. This work is supported by NRI SWAN and NSF NASCENT Center.