Science.gov

Sample records for pixel detectors irradiated

  1. Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

    NASA Astrophysics Data System (ADS)

    Allport, P. P.; Ball, K.; Casse, G.; Chmill, V.; Forshaw, D.; Hadfield, K.; Pritchard, A.; Pool, P.; Tsurin, I.

    2012-01-01

    The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their products meet all the stringent technical requirements. A semiconductor company with very widespread experience of producing science grade CCDs (including deep depletion devices) has adapted their CCD process to fabricate for the first time several wafers of pixel and micro-strip radiation hard sensors, suitable for future high energy physics experiments. The results of the pre-irradiation characterization of devices fabricated with different processing parameters and the measurements of charge collection properties after different hadron irradiation doses up to those anticipated for the (larger area) outer pixel layers at the high-luminosity LHC (HL-LHC) are presented and compared with results from more established particle physics suppliers.

  2. SOI monolithic pixel detector

    NASA Astrophysics Data System (ADS)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  3. Beam test studies of 3D pixel sensors irradiated non-uniformly for the ATLAS forward physics detector

    NASA Astrophysics Data System (ADS)

    Grinstein, S.; Baselga, M.; Boscardin, M.; Christophersen, M.; Da Via, C.; Dalla Betta, G.-F.; Darbo, G.; Fadeyev, V.; Fleta, C.; Gemme, C.; Grenier, P.; Jimenez, A.; Lopez, I.; Micelli, A.; Nelist, C.; Parker, S.; Pellegrini, G.; Phlips, B.; Pohl, D.-L.; Sadrozinski, H. F.-W.; Sicho, P.; Tsiskaridze, S.

    2013-12-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  4. Characterisation of a cobalt-60 small-beam animal irradiator using a realtime silicon pixelated detector

    NASA Astrophysics Data System (ADS)

    Porumb, C. S.; Davies, J. B.; Perevertaylo, V.; Rosenfeld, A. B.; Petasecca, M.

    2016-04-01

    The paper presents a study performed by the Centre for Medical Radiation Physics (CMRP) using a high spatial and temporal resolution silicon pixelated detector named MagicPlate-512. The study focuses on the characterisation of three pencil beams from a low-dose rate, 6 TBq, cobalt-60 source, in terms of percentage depth dose, beam profiles, output factor and shutter timing. Where applicable, the findings were verified against radiochromic EBT3 film and ionization chambers. It was found that the results of the MagicPlate-512 and film agreed within 0.9 mm for penumbra and full-width at half-maximum measurements of the beam profiles, and within 0.75% for percentage depth dose study. The dose rate of the cobalt-60 source was determined to be (10.65 ± 0.03) cGy/min at 1.5 cm depth in Solid Water. A significant asymmetry of the small pencil beam profile was found, which is due to the irregular machining of the small collimator. The average source shutter speed was calculated to be 26 cm/s. The study demonstrates that the MagicPlate-512 dosimetry system, developed at CMRP, is capable of beam characterisation even in cases of very low dose rate sources.

  5. The ALICE Pixel Detector

    NASA Astrophysics Data System (ADS)

    Mercado-Perez, Jorge

    2002-07-01

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well.

  6. Microradiography with Semiconductor Pixel Detectors

    NASA Astrophysics Data System (ADS)

    Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiří; Holý, Tomáš; Platkevič, Michal; Pospíšil, Stanislav; Vavřík, Daniel; Vykydal, Zdeněk

    2007-11-01

    High resolution radiography (with X-rays, neutrons, heavy charged particles, …) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

  7. The FPGA Pixel Array Detector

    NASA Astrophysics Data System (ADS)

    Hromalik, Marianne S.; Green, Katherine S.; Philipp, Hugh T.; Tate, Mark W.; Gruner, Sol M.

    2013-02-01

    A proposed design for a reconfigurable x-ray Pixel Array Detector (PAD) is described. It operates by integrating a high-end commercial field programmable gate array (FPGA) into a 3-layer device along with a high-resistivity diode detection layer and a custom, application-specific integrated circuit (ASIC) layer. The ASIC layer contains an energy-discriminating photon-counting front end with photon hits streamed directly to the FPGA via a massively parallel, high-speed data connection. FPGA resources can be allocated to perform user defined tasks on the pixel data streams, including the implementation of a direct time autocorrelation function (ACF) with time resolution down to 100 ns. Using the FPGA at the front end to calculate the ACF reduces the required data transfer rate by several orders of magnitude when compared to a fast framing detector. The FPGA-ASIC high-speed interface, as well as the in-FPGA implementation of a real-time ACF for x-ray photon correlation spectroscopy experiments has been designed and simulated. A 16×16 pixel prototype of the ASIC has been fabricated and is being tested.

  8. Commissioning of the CMS Forward Pixel Detector

    SciTech Connect

    Kumar, Ashish; /SUNY, Buffalo

    2008-12-01

    The Compact Muon Solenoid (CMS) experiment is scheduled for physics data taking in summer 2009 after the commissioning of high energy proton-proton collisions at Large Hadron Collider (LHC). At the core of the CMS all-silicon tracker is the silicon pixel detector, comprising three barrel layers and two pixel disks in the forward and backward regions, accounting for a total of 66 million channels. The pixel detector will provide high-resolution, 3D tracking points, essential for pattern recognition and precise vertexing, while being embedded in a hostile radiation environment. The end disks of the pixel detector, known as the Forward Pixel detector, has been assembled and tested at Fermilab, USA. It has 18 million pixel cells with dimension 100 x 150 {micro}m{sup 2}. The complete forward pixel detector was shipped to CERN in December 2007, where it underwent extensive system tests for commissioning prior to the installation. The pixel system was put in its final place inside the CMS following the installation and bake out of the LHC beam pipe in July 2008. It has been integrated with other sub-detectors in the readout since September 2008 and participated in the cosmic data taking. This report covers the strategy and results from commissioning of CMS forward pixel detector at CERN.

  9. Optical links for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stucci, Stefania

    2016-07-01

    With the expected increase in the instantaneous luminosity of the LHC in the next few years, the off-detector optical read-out system of the outer two layers of the Pixel Detector of the ATLAS experiment will reach its bandwidth limits. The bandwidth will be increased with new optical receivers, which had to be redesigned since commercial solutions could not be used. The new design allows for a wider operational range in terms of data frequency and input optical power to match the on-detector transmitters of the present Pixel Detector. We report on the design and testing of prototypes of these components and the plans for the installation in the Pixel Detector read-out chain in 2015.

  10. The Silicon Pixel Detector for ALICE Experiment

    SciTech Connect

    Fabris, D.; Bombonati, C.; Dima, R.; Lunardon, M.; Moretto, S.; Pepato, A.; Bohus, L. Sajo; Scarlassara, F.; Segato, G.; Shen, D.; Turrisi, R.; Viesti, G.; Anelli, G.; Boccardi, A.; Burns, M.; Campbell, M.; Ceresa, S.; Conrad, J.; Kluge, A.; Kral, M.

    2007-10-26

    The Inner Tracking System (ITS) of the ALICE experiment is made of position sensitive detectors which have to operate in a region where the track density may be as high as 50 tracks/cm{sup 2}. To handle such densities detectors with high precision and granularity are mandatory. The Silicon Pixel Detector (SPD), the innermost part of the ITS, has been designed to provide tracking information close to primary interaction point. The assembly of the entire SPD has been completed.

  11. Proceedings of PIXEL98 -- International pixel detector workshop

    SciTech Connect

    Anderson, D.F.; Kwan, S.

    1998-08-01

    Experiments around the globe face new challenges of more precision in the face of higher interaction rates, greater track densities, and higher radiation doses, as they look for rarer and rarer processes, leading many to incorporate pixelated solid-state detectors into their plans. The highest-readout rate devices require new technologies for implementation. This workshop reviewed recent, significant progress in meeting these technical challenges. Participants presented many new results; many of them from the weeks--even days--just before the workshop. Brand new at this workshop were results on cryogenic operation of radiation-damaged silicon detectors (dubbed the Lazarus effect). Other new work included a diamond sensor with 280-micron collection distance; new results on breakdown in p-type silicon detectors; testing of the latest versions of read-out chip and interconnection designs; and the radiation hardness of deep-submicron processes.

  12. Development of a CMOS SOI Pixel Detector

    SciTech Connect

    Arai, Y.; Hazumi, M.; Ikegami, Y.; Kohriki, T.; Tajima, O.; Terada, S.; Tsuboyama, T.; Unno, Y.; Ushiroda, Y.; Ikeda, H.; Hara, K.; Ishino, H.; Kawasaki, T.; Miyake, H.; Martin, E.; Varner, G.; Tajima, H.; Ohno, M.; Fukuda, K.; Komatsubara, H.; Ida, J.; /NONE - OKI ELECTR INDUST TOKYO

    2008-08-19

    We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 {micro}m fully-depleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5 mm{sup 2} consisting of 20 x 20 {micro}m{sup 2} pixels have been designed and manufactured. Performance tests with a laser light illumination and a {beta} ray radioactive source indicate successful operation of the detector. We also briefly discuss the back gate effect as well as the simulation study.

  13. Commissioning of the ATLAS pixel detector

    SciTech Connect

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  14. Modulation transfer function of a trapezoidal pixel array detector

    NASA Astrophysics Data System (ADS)

    Wang, Fan; Guo, Rongli; Ni, Jinping; Dong, Tao

    2016-01-01

    The modulation transfer function (MTF) is the tool most commonly used for quantifying the performance of an electro-optical imaging system. Recently, trapezoid-shaped pixels were designed and used in a retina-like sensor in place of rectangular-shaped pixels. The MTF of a detector with a trapezoidal pixel array is determined according to its definition. Additionally, the MTFs of detectors with differently shaped pixels, but the same pixel areas, are compared. The results show that the MTF values of the trapezoidal pixel array detector are obviously larger than those of rectangular and triangular pixel array detectors at the same frequencies.

  15. Radiation experience with the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Veszpremi, V.

    2015-04-01

    The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3 cm and 30 cm in radius and 46.5 cm along the beam axis. It operates in a high-occupancy and high-radiation environment created by particle collisions. Studies of radiation damage effects to the sensors were performed throughout the first running period of the LHC . Leakage current, depletion voltage, pixel readout thresholds, and hit finding efficiencies were monitored as functions of the increasing particle fluence. The methods and results of these measurements will be described together with their implications to detector operation as well as to performance parameters in offline hit reconstruction.

  16. The LAMBDA photon-counting pixel detector

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Lange, S.; Smoljanin, S.; Hirsemann, H.; Graafsma, H.; Epple, M.; Zuvic, M.; Lampert, M.-O.; Fritzsch, T.; Rothermund, M.

    2013-03-01

    The Medipix3 photon-counting detector chip has a number of novel features that are attractive for synchrotron experiments, such as a high frame rate with zero dead time and high spatial resolution. DESY are developing a large-area Medipix3-based detector array (LAMBDA). A single LAMBDA module consists of 2 by 6 Medipix3 chips on a ceramic carrier board, bonded to either a single large silicon sensor or two smaller high-Z sensors. The readout system fits behind the carrier board to allow module tiling, and uses a large on-board RAM and multiple 10 Gigabit Ethernet links to permit high-speed readout. Currently, the first large silicon modules have been constructed and read out at low speed, and the firmware for highspeed readout is being developed. In addition to these silicon sensors, we are developing a germanium hybrid pixel detector in collaboration with Canberra for higher-energy beamlines. Canberra have produced a set of 256-by-256-pixel planar germanium sensors with 55μm pitch, and these are currently being bonded to Medipix3 readout chips by Fraunhofer IZM (Berlin).

  17. The status of the CMS forward pixel detector

    SciTech Connect

    Tan, Ping; /Fermilab

    2006-01-01

    The silicon pixel detector is the innermost component of the CMS tracking system. It provides precise measurements of space points to allow effective pattern recognition in multiple track environments near the LHC interaction point. The end disks of the pixel detector, known as the Forward Pixel detector, are constructed mainly by the US-CMS collaborators. The design techniques, readout electronics, test beam activities, and construction status are reviewed.

  18. Operational experience with the ATLAS Pixel Detector at the LHC

    NASA Astrophysics Data System (ADS)

    Lapoire, C.; Atlas Collaboration

    2013-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy is sufficiently low and hit efficiency exceed the design specification.

  19. Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

    SciTech Connect

    Maria Rita Coluccia et al.

    2002-11-13

    The pixel detector in the BteV experiment at the Tevatron (Fermi Laboratory) is an important detector component for high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10{sup 14} minimum ionizing particles/cm{sup 2}/year. Radiation hardness of prototype n{sup +}/n/p{sup +} silicon pixel sensors has been investigated. We present Electrical characterization curves for irradiated prototype n{sup +}/n/p{sup +} sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.

  20. Hit efficiency study of CMS prototype forward pixel detectors

    SciTech Connect

    Kim, Dongwook; /Johns Hopkins U.

    2006-01-01

    In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

  1. Small pixel CZT detector for hard X-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Wilson, Matthew David; Cernik, Robert; Chen, Henry; Hansson, Conny; Iniewski, Kris; Jones, Lawrence L.; Seller, Paul; Veale, Matthew C.

    2011-10-01

    A new small pixel cadmium zinc telluride (CZT) detector has been developed for hard X-ray spectroscopy. The X-ray performance of four detectors is presented and the detectors are analysed in terms of the energy resolution of each pixel. The detectors were made from CZT crystals grown by the travelling heater method (THM) bonded to a 20×20 application specific integrated circuit (ASIC) and data acquisition (DAQ) system. The detectors had an array of 20×20 pixels on a 250 μm pitch, with each pixel gold-stud bonded to an energy resolving circuit in the ASIC. The DAQ system digitised the ASIC output with 14 bit resolution, performing offset corrections and data storage to disc in real time at up to 40,000 frames per second. The detector geometry and ASIC design was optimised for X-ray spectroscopy up to 150 keV and made use of the small pixel effect to preferentially measure the electron signal. A 241Am source was used to measure the spectroscopic performance and uniformity of the detectors. The average energy resolution (FWHM at 59.54 keV) of each pixel ranged from 1.09±0.46 to 1.50±0.57 keV across the four detectors. The detectors showed good spectral performance and uniform response over almost all pixels in the 20×20 array. A large area 80×80 pixel detector will be built that will utilise the scalable design of the ASIC and the large areas of monolithic spectroscopic grade THM grown CZT that are now available. The large area detector will have the same performance as that demonstrated here.

  2. Detector apparatus having a hybrid pixel-waveform readout system

    SciTech Connect

    Meng, Ling-Jian

    2014-10-21

    A gamma ray detector apparatus comprises a solid state detector that includes a plurality of anode pixels and at least one cathode. The solid state detector is configured for receiving gamma rays during an interaction and inducing a signal in an anode pixel and in a cathode. An anode pixel readout circuit is coupled to the plurality of anode pixels and is configured to read out and process the induced signal in the anode pixel and provide triggering and addressing information. A waveform sampling circuit is coupled to the at least one cathode and configured to read out and process the induced signal in the cathode and determine energy of the interaction, timing of the interaction, and depth of interaction.

  3. Data encoding efficiency in pixel detector readout with charge information

    NASA Astrophysics Data System (ADS)

    Garcia-Sciveres, Maurice; Wang, Xinkang

    2016-04-01

    The average minimum number of bits needed for lossless readout of a pixel detector is calculated, in the regime of interest for particle physics where only a small fraction of pixels have a non-zero value per frame. This permits a systematic comparison of the readout efficiency of different encoding implementations. The calculation is compared to the number of bits used by the FE-I4 pixel readout chip of the ATLAS experiment.

  4. Synchrotron beam test with a photon-counting pixel detector.

    PubMed

    Brönnimann, C; Florin, S; Lindner, M; Schmitt, B; Schulze-Briese, C

    2000-09-01

    Synchrotron beam measurements were performed with a single-photon-counting pixel detector to investigate the influence of threshold settings on charge sharing. Improvement of image homogeneity by adjusting the threshold of each pixel individually was demonstrated. With a flat-field correction, the homogeneity could be improved. A measurement of the point spread function is reported. PMID:16609212

  5. Monolithic pixel detectors in silicon on insulator technology

    NASA Astrophysics Data System (ADS)

    Bisello, Dario

    2013-05-01

    Silicon On Insulator (SOI) is becoming an attractive technology to fabricate monolithic pixel detectors. The possibility of using the depleted resistive substrate as a drift collection volume and to connect it by means of vias through the buried oxide to the pixel electronic makes this kind of approach interesting both for particle and photon detection. In this paper I report the results obtained in the development of monolithic pixel detectors in an SOI technology by a collaboration between groups from the University and INFN of Padova (Italy) and the LBNL and the SCIPP at UCSC (USA).

  6. Operational experience with the ATLAS Pixel detector at the LHC

    NASA Astrophysics Data System (ADS)

    Deluca, C.

    2011-12-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of pico-seconds lifetime particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97.5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, and a good alignment allows high quality track resolution.

  7. Single photon counting pixel detectors for synchrotron radiation experiments

    NASA Astrophysics Data System (ADS)

    Toyokawa, H.; Broennimann, Ch.; Eikenberry, E. F.; Henrich, B.; Kawase, M.; Kobas, M.; Kraft, P.; Sato, M.; Schmitt, B.; Suzuki, M.; Tanida, H.; Uruga, T.

    2010-11-01

    At the Paul Scherrer Institute PSI an X-ray single photon counting pixel detector (PILATUS) based on the hybrid-pixel detector technology was developed in collaboration with SPring-8. The detection element is a 320 or 450 μm thick silicon sensor forming pixelated pn-diodes with a pitch of 172 μm×172 μm. An array of 2×8 custom CMOS readout chips are indium bump-bonded to the sensor, which leads to 33.5 mm×83.8 mm detective area. Each pixel contains a charge-sensitive amplifier, a single level discriminator and a 20 bit counter. This design realizes a high dynamic range, short readout time of less than 3 ms, a high framing rate of over 200 images per second and an excellent point-spread function. The maximum counting rate achieves more than 2×10 6 X-rays/s/pixel.

  8. DAQ hardware and software development for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stramaglia, Maria Elena

    2016-07-01

    In 2014, the Pixel Detector of the ATLAS experiment has been extended by about 12 million pixels thanks to the installation of the Insertable B-Layer (IBL). Data-taking and tuning procedures have been implemented along with newly designed readout hardware to support high bandwidth for data readout and calibration. The hardware is supported by an embedded software stack running on the readout boards. The same boards will be used to upgrade the readout bandwidth for the two outermost barrel layers of the ATLAS Pixel Detector. We present the IBL readout hardware and the supporting software architecture used to calibrate and operate the 4-layer ATLAS Pixel Detector. We discuss the technical implementations and status for data taking, validation of the DAQ system in recent cosmic ray data taking, in-situ calibrations, and results from additional tests in preparation for Run 2 at the LHC.

  9. Challenges of small-pixel infrared detectors: a review

    NASA Astrophysics Data System (ADS)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2016-04-01

    In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology—HgCdTe material systems and III-V materials (mainly barrier detectors)—have been investigated.

  10. Challenges of small-pixel infrared detectors: a review.

    PubMed

    Rogalski, A; Martyniuk, P; Kopytko, M

    2016-04-01

    In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated. PMID:27007242

  11. Development of pixel detectors for SSC vertex tracking

    SciTech Connect

    Kramer, G. . Electro-Optical and Data Systems Group); Atlas, E.L.; Augustine, F.; Barken, O.; Collins, T.; Marking, W.L.; Worley, S.; Yacoub, G.Y. ) Shapiro, S.L. ); Arens, J.F.; Jernigan, J.G. . Space Sciences Lab.); Nygren,

    1991-04-01

    A description of hybrid PIN diode arrays and a readout architecture for their use as a vertex detector in the SSC environment is presented. Test results obtained with arrays having 256 {times} 256 pixels, each 30 {mu}m square, are also presented. The development of a custom readout for the SSC will be discussed, which supports a mechanism for time stamping hit pixels, storing their xy coordinates, and storing the analog information within the pixel. The peripheral logic located on the array, permits the selection of those pixels containing interesting data and their coordinates to be selectively read out. This same logic also resolves ambiguous pixel ghost locations and controls the pixel neighbor read out necessary to achieve high spatial resolution. The thermal design of the vertex tracker and the proposed signal processing architecture will also be discussed. 5 refs., 13 figs., 3 tabs.

  12. The BTeV pixel detector and trigger system

    SciTech Connect

    Simon Kwan

    2002-12-03

    BTeV is an approved forward collider experiment at the Fermilab Tevatron dedicated to the precision studies of CP violation, mixing, and rare decays of beauty and charm hadrons. The BTeV detector has been designed to achieve these goals. One of the unique features of BTeV is a state-of-the-art pixel detector system, designed to provide accurate measurements of the decay vertices of heavy flavor hadrons that can be used in the first trigger level. The pixel vertex detector and the trigger design are described. Recent results on some of the achievements in the R and D effort are presented.

  13. Beam test characterization of CMS silicon pixel detectors for the phase-1 upgrade

    NASA Astrophysics Data System (ADS)

    Korol, I.

    2015-10-01

    The Silicon Pixel Detector forms the innermost part of the CMS tracking system and is critical to track and vertex reconstruction. Being in close proximity to the beam interaction point, it is exposed to the highest radiation levels in the silicon tracker. In order to preserve the tracking performance with the LHC luminosity increase which is foreseen for the next years, the CMS collaboration has decided to build a new pixel detector with four barrel layers mounted around a reduced diameter beam pipe, as compared to the present three layer pixel detector in the central region. A new digital version of the front-end readout chip has been designed and tested; it has increased data buffering and readout link speed to maintain high efficiency at increasing occupancy. In addition, it offers lower charge thresholds that will improve the tracking efficiency and position resolution. Single chip modules have been evaluated in the DESY electron test beam in terms of charge collection, noise, tracking efficiency and position resolution before and after irradiation with 24 GeV protons from the CERN Proton Synchroton equivalent to the fluence expected after 500 fb-1 of integrated luminosity in the fourth layer of the pixel tracker. High efficiency and an excellent position resolution have been observed which are well maintained even after the proton irradiation. The results are well described by the CMS pixel detector simulation.

  14. Velocity map imaging using an in-vacuum pixel detector

    NASA Astrophysics Data System (ADS)

    Gademann, Georg; Huismans, Ymkje; Gijsbertsen, Arjan; Jungmann, Julia; Visschers, Jan; Vrakking, Marc J. J.

    2009-10-01

    The use of a new type in-vacuum pixel detector in velocity map imaging (VMI) is introduced. The Medipix2 and Timepix semiconductor pixel detectors (256×256 square pixels, 55×55 μm2) are well suited for charged particle detection. They offer high resolution, low noise, and high quantum efficiency. The Medipix2 chip allows double energy discrimination by offering a low and a high energy threshold. The Timepix detector allows to record the incidence time of a particle with a temporal resolution of 10 ns and a dynamic range of 160 μs. Results of the first time application of the Medipix2 detector to VMI are presented, investigating the quantum efficiency as well as the possibility to operate at increased background pressure in the vacuum chamber.

  15. Hybrid Pixel Detectors for gamma/X-ray imaging

    NASA Astrophysics Data System (ADS)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  16. Rework of flip chip bonded radiation pixel detectors

    NASA Astrophysics Data System (ADS)

    Vähänen, S.; Heikkinen, H.; Pohjonen, H.; Salonen, J.; Savolainen-Pulli, S.

    2008-06-01

    In this paper, some practical aspects of reworking flip chip hybridized pixel detectors are discussed. As flip chip technology has been advancing in terms of placement accuracy and reliability, large-area hybrid pixel detectors have been developed. The area requirements are usually fulfilled by placing several readout chips (ROCs) on single sensor chip. However, as the number of ROCs increases, the probability of failure in the hybridization process and the ROC operation also increases. Because high accuracy flip chip bonding takes time, a significant part of the price of a pixel detector comes from the flip chip assembly process itself. As large-area detector substrates are expensive, and many flip chip placements are required, the price of an assembled detector can become very high. In a typical case, there is just one bad ROC (out of several) on a faulty detector to be replaced. Considering the high price of pixel detectors and the fact that reworking faulty ROCs does not take much longer than the original placement, it is worthwhile to investigate the feasibility of a rework process.

  17. Impact of CT detector pixel-to-pixel crosstalk on image quality

    NASA Astrophysics Data System (ADS)

    Engel, Klaus J.; Spies, Lothar; Vogtmeier, Gereon; Luhta, Randy

    2006-03-01

    In Computed Tomography (CT), the image quality sensitively depends on the accuracy of the X-ray projection signal, which is acquired by a two-dimensional array of pixel cells in the detector. If the signal of X-ray photons is spread out to neighboring pixels (crosstalk), a decrease of spatial resolution may result. Moreover, streak and ring artifacts may emerge. Deploying system simulations for state-of-the-art CT detector configurations, we characterize origin and appearance of these artifacts in the reconstructed CT images for different scenarios. A uniform pixel-to-pixel crosstalk results in a loss of spatial resolution only. The Modulation Transfer Function (MTF) is attenuated, without affecting the limiting resolution, which is defined as the first zero of the MTF. Additional streak and ring artifacts appear, if the pixel-to-pixel crosstalk is non-uniform. Parallel to the system simulations we developed an analytical model. The model explains resolution loss and artifact level using the first and second derivative of the X-ray profile acquired by the detector. Simulations and analytical model are in agreement to each other. We discuss the perceptibility of ring and streak artifacts within noisy images if no crosstalk correction is applied.

  18. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    NASA Astrophysics Data System (ADS)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Katoh, Kouji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2011-06-01

    Since authors have successfully demonstrated uncooled infrared (IR) focal plane array (FPA) with 23.5 um pixel pitch, it has been widely utilized for commercial applications such as thermography, security camera and so on. One of the key issues for uncooled IR detector technology is to shrink the pixel size. The smaller the pixel pitch, the more the IR camera products become compact and the less cost. This paper proposes a new pixel structure with a diaphragm and beams which are placed in different level, to realize an uncooled IRFPA with smaller pixel pitch )<=17 μm). The upper level consists of diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to place on the adjacent pixels. The test devices of this pixel design with 12 um, 15 um and 17 um pitch have been fabricated on the Si ROIC of QVGA (320 × 240) with 23.5 um pitch. Their performances reveal nearly equal to the IRFPA with 23.5 um pitch. For example, noise equivalent temperature difference (NETD) of 12 μm pixel is 63.1 mK with thermal time constant of 14.5 msec. In addition, this new structure is expected to be more effective for the existing IRFPA with 23.5 um pitch in order to improve the IR responsivity.

  19. Beam test results of the dependence of signal size on incident particle flux in diamond pixel and pad detectors

    NASA Astrophysics Data System (ADS)

    Wallny, R.

    2015-07-01

    We present results of beam tests of charged particle detectors based on single-crystal and poly-crystalline Chemical Vapor Deposition (CVD) diamond. We measured the signal pulse height dependence on the particle flux. The detectors were tested over a range of particle fluxes from 2 kHz/cm2 to 20 MHz/cm2. The pulse height of the sensors was measured with pad and pixel readout electronics. The pulse height of the non-irradiated single-crystal CVD diamond pad sensors was stable with respect to flux, while the pulse height of irradiated single-crystal CVD diamond pad sensors decreased with increasing particle flux. The pulse height of the non-irradiated single-crystal CVD diamond pixel detectors decreased slightly with increasing particle flux while the pulse height of the irradiated single-crystal CVD diamond pixel detectors decreased significantly with increasing particle flux. The observed sensitivity to flux is similar in both the diamond pad sensors constructed using diamonds from the Pixel Luminosity Telescope (PLT) irradiated during its pilot run in the Compact Muon Solenoid (CMS) detector and in neutron irradiated diamond pad sensors from the same manufacturer irradiated to the same fluence of neutrons. The pulse height for irradiated poly-crystalline CVD diamond pad sensors proved to be stable with respect to particle flux.

  20. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    NASA Astrophysics Data System (ADS)

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-01

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  1. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    SciTech Connect

    Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-28

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  2. Polycrystalline CVD diamond pixel array detector for nuclear particles monitoring

    NASA Astrophysics Data System (ADS)

    Pacilli, M.; Allegrini, P.; Girolami, M.; Conte, G.; Spiriti, E.; Ralchenko, V. G.; Komlenok, M. S.; Khomic, A. A.; Konov, V. I.

    2013-02-01

    We report the 90Sr beta response of a polycrystalline diamond pixel detector fabricated using metal-less graphitic ohmic contacts. Laser induced graphitization was used to realize multiple squared conductive contacts with 1mm × 1mm area, 0.2 mm apart, on one detector side while on the other side, for biasing, a 9mm × 9mm large graphite contact was realized. A proximity board was used to wire bonding nine pixels at a time and evaluate the charge collection homogeneity among the 36 detector pixels. Different configurations of biasing were experimented to test the charge collection and noise performance: connecting the pixel at the ground potential of the charge amplifier led to best results and minimum noise pedestal. The expected exponential trend typical of beta particles has been observed. Reversing the bias polarity the pulse height distribution (PHD) does not changes and signal saturation of any pixel was observed around ±200V (0.4 V/μm). Reasonable pixels response uniformity has been evidenced even if smaller pitch 50÷100 μm structures need to be tested.

  3. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    NASA Astrophysics Data System (ADS)

    Zain, R. M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pixelated detector arrays. The anode and cathode contacts are realised by depositing gold to produce ohmic contacts. Measurements of I-V characteristics were performed to study the material uniformity. The bias voltage is stepped from -1000V to 1000V to investigate the variation of leakage current from pixel to pixel. Bulk leakage current is measured to be less than 1nA.

  4. Calibration analysis software for the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Stramaglia, Maria Elena

    2016-07-01

    The calibration of the ATLAS Pixel Detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel Detector scans and analyses is called calibration console. The introduction of a new layer, equipped with new FE-I4 chips, required an update of the console architecture. It now handles scans and scan analyses applied together to chips with different characteristics. An overview of the newly developed calibration analysis software will be presented, together with some preliminary results.

  5. Pixel detectors in 3D technologies for high energy physics

    SciTech Connect

    Deptuch, G.; Demarteau, M.; Hoff, J.; Lipton, R.; Shenai, A.; Yarema, R.; Zimmerman, T.; /Fermilab

    2010-10-01

    This paper reports on the current status of the development of International Linear Collider vertex detector pixel readout chips based on multi-tier vertically integrated electronics. Initial testing results of the VIP2a prototype are presented. The chip is the second embodiment of the prototype data-pushed readout concept developed at Fermilab. The device was fabricated in the MIT-LL 0.15 {micro}m fully depleted SOI process. The prototype is a three-tier design, featuring 30 x 30 {micro}m{sup 2} pixels, laid out in an array of 48 x 48 pixels.

  6. Modulation transfer function measurement technique for small-pixel detectors

    NASA Technical Reports Server (NTRS)

    Marchywka, Mike; Socker, Dennis G.

    1992-01-01

    A modulation transfer function (MTF) measurement technique suitable for large-format, small-pixel detector characterization has been investigated. A volume interference grating is used as a test image instead of the bar or sine wave target images normally used. This technique permits a high-contrast, large-area, sinusoidal intensity distribution to illuminate the device being tested, avoiding the need to deconvolve raw data with imaging system characteristics. A high-confidence MTF result at spatial frequencies near 200 cycles/mm is obtained. We present results at several visible light wavelengths with a 6.8-micron-pixel CCD. Pixel response functions are derived from the MTF results.

  7. Gas pixel detectors for X-ray polarimetry applications

    NASA Astrophysics Data System (ADS)

    Bellazzini, R.; Angelini, F.; Baldini, L.; Bitti, F.; Brez, A.; Cavalca, F.; Del Prete, M.; Kuss, M.; Latronico, L.; Omodei, N.; Pinchera, M.; Massai, M. M.; Minuti, M.; Razzano, M.; Sgro, C.; Spandre, G.; Tenze, A.; Costa, E.; Soffitta, P.

    2006-05-01

    We discuss a new class of micro pattern gas detectors, the gas pixel detector (GPD), in which a complete integration between the gas amplification structure and the read-out electronics has been reached. An application-specific integrated circuit (ASIC) built in deep sub-micron technology has been developed to realize a monolithic device that is, at the same time, the pixelized charge collecting electrode and the amplifying, shaping and charge measuring front-end electronics. The CMOS chip has the top metal layer patterned in a matrix of 80 μm pitch hexagonal pixels, each of them directly connected to the underneath electronics chain which has been realized in the remaining five layers of the 0.35 μm VLSI technology. Results from tests of a first prototype of such detector with 2 k pixels and a full scale version with 22 k pixels are presented. The application of this device for Astronomical X-ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation is shown. Results from a full MonteCarlo simulation for two astronomical sources, the Crab Nebula and the Hercules X1, are also reported.

  8. Radiation tolerance of the readout chip for the Phase I upgrade of the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Hoss, J.; Kästli, H.-C.; Meier, B.; Rohe, T.; Starodumov, A.

    2016-01-01

    For the Phase I upgrade of the CMS pixel detector a new digital readout chip (ROC) has been developed. An important part of the design verification are irradiation studies to ensure sufficient radiation tolerance. The paper summarizes results of the irradiation studies on the final ROC design for the detector layers 2 - 4. Samples have been irradiated with 23 MeV protons to accumulate the expected lifetime dose of 0.5 MGy and up to 1.1 MGy to project the performance of the ROC for layer 1 of the detector. It could be shown that the design is sufficiently radiation tolerant and that all performance parameters stay within their specifications. Additionally, very high doses of up to 4.2 MGy have been tested to explore the limits of the current chip design on 250 nm CMOS technology. The study confirmed that samples irradiated up to the highest dose could be successfully operated with test pulses.

  9. The BTeV pixel and microstrip detector

    SciTech Connect

    Simon W Kwan

    2003-06-04

    The BTeV pixel detector is one of the most crucial elements in the BTeV experiment. While the pixel detector is technically challenging, we have made great progress towards identifying viable solutions for individual components of the system. The forward silicon tracker is based on more mature technology and its design has benefited from the experience of other experiments. Nevertheless, we have started an R&D program on the forward silicon tracker and first results are expected some time next year.

  10. Novel integrated CMOS pixel structures for vertex detectors

    SciTech Connect

    Kleinfelder, Stuart; Bieser, Fred; Chen, Yandong; Gareus, Robin; Matis, Howard S.; Oldenburg, Markus; Retiere, Fabrice; Ritter, Hans Georg; Wieman, Howard H.; Yamamoto, Eugene

    2003-10-29

    Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections.

  11. Overview of the BTeV Pixel Detector

    SciTech Connect

    Jeffrey A Appel

    2002-12-10

    BTeV is a new Fermilab beauty and charm experiment designed to operate in the CZero region of the Tevatron collider. Critical to the success of BTeV is its pixel detector. The unique features of this pixel detector include its proximity to the beam, its operation with a beam crossing time of 132 ns, and the need for the detector information to be read out quickly enough to be used for the lowest level trigger. This talk presents an overview of the pixel detector design, giving the motivations for the technical choices made. The status of the current R&D on detector components is also reviewed. Additional Pixel 2002 talks on the BTeV pixel detector are given by Dave Christian[1], Mayling Wong[2], and Sergio Zimmermann[3]. Table 1 gives a selection of pixel detector parameters for the ALICE, ATLAS, BTeV, and CMS experiments. Comparing the progression of this table, which I have been updating for the last several years, has shown a convergence of specifications. Nevertheless, significant differences endure. The BTeV data-driven readout, horizontal and vertical position resolution better than 9 {micro}m with the {+-} 300 mr forward acceptance, and positioning in vacuum and as close as 6 mm from the circulating beams remain unique. These features are driven by the physics goals of the BTeV experiment. Table 2 demonstrates that the vertex trigger performance made possible by these features is requisite for a very large fraction of the B meson decay physics which is so central to the motivation for BTeV. For most of the physics quantities of interest listed in the table, the vertex trigger is essential. The performance of the BTeV pixel detector may be summarized by looking at particular physics examples; e.g., the B{sub s} meson decay B{sub s} {yields} D{sub s}{sup -} K{sup +}. For that decay, studies using GEANT3 simulations provide quantitative measures of performance. For example, the separation between the B{sub s} decay point and the primary proton

  12. Planar pixel detector module development for the HL-LHC ATLAS pixel system

    NASA Astrophysics Data System (ADS)

    Bates, Richard L.; Buttar, C.; Stewart, A.; Blue, A.; Doonan, K.; Ashby, J.; Casse, G.; Dervan, P.; Forshaw, D.; Tsurin, I.; Brown, S.; Pater, J.

    2013-12-01

    The ATLAS pixel detector for the HL-LHC requires the development of large area pixel modules that can withstand doses up to 1016 1 MeV neq cm-2. The area of the pixel detector system will be over 5 m2 and as such low cost, large area modules are required. The development of a quad module based on 4 FE-I4 readout integrated chips (ROIC) will be discussed. The FE-I4 ROIC is a large area chip and the yield of the flip-chip process to form an assembly is discussed for single chip assemblies. The readout of the quad module for laboratory tests will be reported.

  13. Design Methodology: ASICs with complex in-pixel processing for Pixel Detectors

    SciTech Connect

    Fahim, Farah

    2014-10-31

    The development of Application Specific Integrated Circuits (ASIC) for pixel detectors with complex in-pixel processing using Computer Aided Design (CAD) tools that are, themselves, mainly developed for the design of conventional digital circuits requires a specialized approach. Mixed signal pixels often require parasitically aware detailed analog front-ends and extremely compact digital back-ends with more than 1000 transistors in small areas below 100μm x 100μm. These pixels are tiled to create large arrays, which have the same clock distribution and data readout speed constraints as in, for example, micro-processors. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout.

  14. Pixel Detectors For Diffraction Experiments At The Swiss Light Source

    SciTech Connect

    Huelsen, G.; Eikenberry, E.F.; Schmitt, B.; Schulze-Briese, C.; Tomizaki, T.; Stampanoni, M.; Willmott, P.; Patterson, B.; Broennimann, Ch.; Horisberger, R.; Toyokawa, H.; Borchert, G. L.

    2004-05-12

    The PILATUS detector (Pixel Apparatus for the SLS) is a large, quantum-limited area X-ray detector for protein crystallography which is currently under construction. Its basic units are modules with 16 CMOS chips bump-bonded to a large, continuously sensitive silicon sensor with 157x366 pixels of 217x217 {mu}m2, leading to an active area of 34x80 mm2. With a counting circuit in each pixel, X-rays are detected in single photon counting mode, leading to excellent, noise-free data. The main properties of the detector are an energy range of 6 to 30 keV, no back-ground due to leakage current or readout-noise, fast read-out time of 6.7 ms, a rate/pixel >104/s and a PSF of one pixel. PILATUS detectors are installed at the SLS X06SA protein crystallography beamline, and at both the surface diffraction (SD) station and the radiography and tomography (XTM) station of beamline X04SA. The detectors are operated at room temperature and thus are very easy to use. Experiments benefit from the ability to detect very weak diffraction spots with high precision. At the SD station and at the XTM station, which is equipped with a Bragg magnifier, diffraction, radiography and tomography experiments showed promising results. At beamline X06SA, a three-module array (1120x157 pixels) with a readout time of 6.7 ms was tested. This system was used to collect fine phi-sliced protein crystal data in continuous sample rotation mode in which the crystal was continuously rotated with a slow angular velocity of 0.04 deg./s without any shutter operation. Exposure time per frame ranged from 100 ms to a few seconds, depending on the crystal. These initial experiments show the potential of this method.

  15. Active Pixel Sensor Characterization for the STAR Detector

    NASA Astrophysics Data System (ADS)

    King, Jake

    2004-10-01

    The STAR collaboration is studying matter at high temperatures and densities. If a significant improvement to the measurement of particle trajectories can be made, charmed mesons that decay away from the primary collision point could be identified. To achieve this goal, STAR is building a vertex detector consisting of a new technology Â- active pixel sensors. (APS) An APS is an implementation of standard CMOS technology in which each pixel has a photodiode directly above the epitaxial layer. Incident particles produce electron-hole pairs in the epitaxial layer, and these electrons accumulate on the photodiode. Charge from the photodiode is digitized to identify the position of the incident particle. It is important to characterize the signal to noise, readout time, and resolution on several different pixel sizes so that the vertex detector can be optimized for cost and speed. Larger pixels result in a faster data acquisition, while smaller pixels have better resolution. We will present studies of 5, 10, 20 and 30μm square pixel geometries that measure charge distribution and collection. We will also display the results of using a field emission scanning electron microscope with energies from 1 to 30 keV. This tool has the potential to probe regions of the APS integrated circuit and contribute to understanding its properties.

  16. Readout chip for the CMS pixel detector upgrade

    NASA Astrophysics Data System (ADS)

    Rossini, Marco

    2014-11-01

    For the CMS experiment a new pixel detector is planned for installation during the extended shutdown in winter 2016/2017. Among the changes of the detector modified front end electronics will be used for higher efficiency at peak luminosity of the LHC and faster readout. The first prototype versions of the new readout chip have been designed and produced. The results of qualification and calibration for the new chip are presented in this paper.

  17. Study of indium and solder bumps for the BTeV Pixel Detector

    SciTech Connect

    Simon W Kwan et al.

    2003-11-05

    The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the strength of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposed to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to an Sr{sup 90} source. We report the results from these studies and our plan to measure the effect of cryogenic temperatures on the bumps.

  18. Pixelated Single-crystal Diamond Detector for fast neutron measurements

    NASA Astrophysics Data System (ADS)

    Rebai, M.; Cazzaniga, C.; Croci, G.; Tardocchi, M.; Perelli Cippo, E.; Calvani, P.; Girolami, M.; Trucchi, D. M.; Grosso, G.; Gorini, G.

    2015-03-01

    Single-crystal Diamond Detectors (SDDs), due to their high radiation hardness, fast response time and small size, are good candidates as fast neutron detectors in those environments where the high neutron flux is an issue, such as spallation neutron sources and the next generation thermonuclear fusion plasmas, i.e. the ITER experiment. Neutron detection in SDDs is based on the collection of electron-hole pairs produced by charged particles generated by neutron interactions with 12C. Recent measurements have demonstrated the SDD capability of measuring the neutron flux with a good energy resolution and at high rates. In this work a novel detector based on a 12-pixels SDD matrix will be presented. Each pixel is equipped with an independent electronic chain: the fast shaping preamplifier coupled to a digitizer is able to combine the high rate capability and the good energy resolution. Two CAEN digitizers are compared and the possibility of performing good energy resolution measurements (<2%) and at high rates (>1 MHz per channel) is described. Each pixel was characterized and calibrated using an 241Am source: the energy resolution was evaluated and gives a mean value of 1.73% at 5.5 MeV. The good energy resolution achieved and its uniformity between pixels are the demonstration of the capability of this novel detector as a spectrometer. This system will be installed during the next Deuterium-Tritium campaign on a collimated vertical line of sight at JET for 14 MeV neutron measurements.

  19. Precision tracking with a single gaseous pixel detector

    NASA Astrophysics Data System (ADS)

    Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N. P.; de Jong, P.; Kluit, R.

    2015-09-01

    The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips. Using wafer post-processing we add a spark-protection layer and a grid to create an amplification region above the chip, allowing individual electrons released above the grid by the passage of ionising radiation to be recorded. The electron creation point is measured in 3D, using the pixel position for (x, y) and the drift time for z. The track can be reconstructed by fitting a straight line to these points. In this work we have used a pixel-readout-chip which is a small-scale prototype of Timepix3 chip (designed for both silicon and gaseous detection media). This prototype chip has several advantages over the existing Timepix chip, including a faster front-end (pre-amplifier and discriminator) and a faster TDC which reduce timewalk's contribution to the z position error. Although the chip is very small (sensitive area of 0.88 × 0.88mm2), we have built it into a detector with a short drift gap (1.3 mm), and measured its tracking performance in an electron beam at DESY. We present the results obtained, which lead to a significant improvement for the resolutions with respect to Timepix-based detectors.

  20. Large format, small pixel pitch and hot detectors at SOFRADIR

    NASA Astrophysics Data System (ADS)

    Reibel, Y.; Rouvie, A.; Nedelcu, A.; Augey, T.; Pere-Laperne, N.; Rubaldo, L.; Billon-Lanfrey, D.; Gravrand, O.; Rothman, J.; Destefanis, G.

    2013-10-01

    Recently Sofradir joined a very small circle of IR detector manufacturers with expertise every aspect of the cooled and uncooled IR technologies, all under one roof by consolidating all IR technologies available in France. These different technologies are complementary and are used depending of the needs of the applications mainly concerning the detection range needs as well as their ability to detect in bad weather environmental conditions. SNAKE (InGaAs) and SCORPIO LW (MCT) expand Sofradir's line of small pixel pitch TV format IR detectors from the mid-wavelength to the short and long wavelengths. Our dual band MW-LW QWIP detectors (25μm, 384×288 pixels) benefit to tactical platforms giving an all-weather performance and increasing flexibility in the presence of battlefield obscurants. In parallel we have been pursuing further infrared developments on future MWIR detectors, such as the VGA format HOT detector that consumes 2W and the 10μm pitch IR detector which gives us a leading position in innovation. These detectors are designed for long-range surveillance equipment, commander or gunner sights, ground-to-ground missile launchers and other applications that require higher resolution and sensitivity to improve reconnaissance and target identification. This paper discusses the system level performance in each detector type.

  1. Sensor Development and Readout Prototyping for the STAR Pixel Detector

    SciTech Connect

    Greiner, L.; Anderssen, E.; Matis, H.S.; Ritter, H.G.; Stezelberger, T.; Szelezniak, M.; Sun, X.; Vu, C.; Wieman, H.

    2009-01-14

    The STAR experiment at the Relativistic Heavy Ion Collider (RHIC) is designing a new vertex detector. The purpose of this upgrade detector is to provide high resolution pointing to allow for the direct topological reconstruction of heavy flavor decays such as the D{sup 0} by finding vertices displaced from the collision vertex by greater than 60 microns. We are using Monolithic Active Pixel Sensor (MAPS) as the sensor technology and have a coupled sensor development and readout system plan that leads to a final detector with a <200 {micro}s integration time, 400 M pixels and a coverage of -1 < {eta} < 1. We present our coupled sensor and readout development plan and the status of the prototyping work that has been accomplished.

  2. Use of silicon pixel detectors in double electron capture experiments

    NASA Astrophysics Data System (ADS)

    Cermak, P.; Stekl, I.; Shitov, Yu A.; Mamedov, F.; Rukhadze, E. N.; Jose, J. M.; Cermak, J.; Rukhadze, N. I.; Brudanin, V. B.; Loaiza, P.

    2011-01-01

    A novel experimental approach to search for double electron capture (EC/EC) is discussed in this article. R&D for a new generation EC/EC spectrometer based on silicon pixel detectors (SPDs) has been conducted since 2009 for an upgrade of the TGV experiment. SPDs built on Timepix technology with a spectroscopic readout from each individual pixel are an effective tool to detect the 2νEC/EC signature of the two low energy X-rays hitting two separate pixels. The ability of SPDs to indentify α/β/γ particles and localize them precisely leads to effective background discrimination and thus considerable improvement of the signal-to-background ratio (S/B). A multi-SPD system, called a Silicon Pixel Telescope (SPT), is planned based on the experimental approach of the TGV calorimeter which measures thin foils of enriched EC/EC-isotope sandwiched between HPGe detectors working in coincidence mode. The sources of SPD internal background have been identified by measuring SPD radiopurity with a low-background HPGe detector as well as by long-term SPD background runs in the Modane underground laboratory (LSM, France), and results of these studies are presented.

  3. MTF study of planar small pixel pitch quantum IR detectors

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Baier, N.; Ferron, A.; Rochette, F.; Berthoz, J.; Rubaldo, L.; Cluzel, R.

    2014-06-01

    The actual trend in quantum IR detector development is the design of very small pixel pitch large arrays. From previously 30μm pitch, the standard pixel pitch is today 15μm and is expected to decrease to 12μm in the next few years. Furthermore, focal plane arrays (FPA) with pixel pitch as small as small as 10μm has been demonstrated. Such ultra-small pixel pitches are very small compared to the typical length ruling the electrical characteristics of the absorbing materials, namely the minority carrier diffusion length. As an example for low doped N type HgCdTe or InSb material, this diffusion length is of the order of 30 to 50μm, i.e. 3 to 5 times the targeted pixel pitches. This has strong consequences on the modulation transfer function (MTF) for planar structures, where the lateral extension of the photodiode is limited by diffusion. For such aspect ratios, the self-confinement of neighboring diodes may not be efficient enough to maintain optimal MTF. Therefore, this issue has to be addressed in order to take full benefits of the pixel pitch reduction in terms of image resolution. This paper aims at investigating the MTF evolution of HgCdTe and InSb FPAs decreasing the pixel pitch below 15μm. Both experimental measurements and finite element simulations are used to discuss this issue. Different scenarii will be compared, namely deep mesa etch between pixels, internal drift, surface recombination, thin absorbing layers.

  4. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

    NASA Astrophysics Data System (ADS)

    Onodera, T.; Hitomi, K.; Shoji, T.; Hiratate, Y.

    2004-06-01

    Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI 2. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm 3). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI 2. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3×3 pixellated anodes (0.57×0.57 mm 2 each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with 241Am (59.5 keV), 57Co (122 keV) and 137Cs (662 keV) gamma-ray sources at temperature of -20°C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

  5. Modulation transfer function measurement technique for small-pixel detectors.

    PubMed

    Marchywka, M; Socker, D G

    1992-12-01

    A modulation transfer function (MTF) measurement technique suitable for large-format, small-pixel detector characterization has been investigated. A volume interference grating is used as a test image instead of the bar or sine wave target images normally used. This technique permits a high-contrast, large-area, sinusoidal intensity distribution to illuminate the device being tested, avoiding the need to deconvolve raw data with imaging system characteristics. A high-confidence MTF result at spatial frequencies near 200 cycles/mm is obtained. We present results at several visible light wavelengths with a 6.8-microm-pixel CCD. Pixel response functions are derived from the MTF results. PMID:20802584

  6. Recent Developments of HEP Pixel Detector Readout Chips

    NASA Astrophysics Data System (ADS)

    Caminada, Lea

    This article reviews the development of readout integrated circuits for hybrid pixel particle physics detectors. The 250-nm feature size chips in the presently operating ATLAS and CMS experiments are compared with the current state of the art in 130-nm feature size represented by the FE-I4 chip that will be used to add a new beam pipe layer for the ATLAS experiment in 2013 and the upgrade options of the CMS pixel readout chip. This includes a discussion of the array and pixel size, analog performance, readout architecture, power consumption, power distribution options and radiation hardness. Finally, recent work in 65-nm feature size as a means to continue the evolution of readout chip technology towards smaller feature size, higher rate, and lower power is presented.

  7. Characterization of indium and solder bump bonding for pixel detectors

    SciTech Connect

    Selcuk Cihangir and Simon Kwan

    2000-09-28

    A review of different bump-bonding processes used for pixel detectors is given. A large scale test on daisy-chained components from two vendors has been carried out at Fermilab to characterize the yield of these processes. The vendors are Advanced Interconnect Technology Ltd. (AIT) of Hong Kong and MCNC in North Carolina, US. The results from this test are presented and technical challenges encountered are discussed.

  8. Wire bond vibration of forward pixel tracking detector of CMS

    SciTech Connect

    Atac, M.; Gobbi, B.; Kwan, S.; Pischalnikov, Y.; Spencer, E.; Sellberg, G.; Pavlicek, V.; /Fermilab

    2006-10-01

    Wire bonds of the Forward Pixel (FPix) tracking detectors are oriented in the direction that maximizes Lorentz Forces relative to the 4 Tesla field of the Compact Muon Solenoid (CMS) Detector's magnet. The CMS Experiment is under construction at the Large Hadron Collider at CERN, Geneva, Switzerland. We were concerned about Lorentz Force oscillating the wires at their fundamental frequencies and possibly fracturing or breaking them at their heels, as happened with the CDF wire bonds. This paper reports a study to understand what conditions break such bonds.

  9. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  10. Pixel diamond detectors for excimer laser beam diagnostics

    NASA Astrophysics Data System (ADS)

    Girolami, M.; Allegrini, P.; Conte, G.; Salvatori, S.

    2011-05-01

    Laser beam profiling technology in the UV spectrum of light is evolving with the increase of excimer lasers and lamps applications, that span from lithography for VLSI circuits to eye surgery. The development of a beam-profiler, able to capture the excimer laser single pulse and process the acquired pixel current signals in the time period between each pulse, is mandatory for such applications. 1D and 2D array detectors have been realized on polycrystalline CVD diamond specimens. The fast diamond photoresponse, in the ns time regime, suggests the suitability of such devices for fine tuning feedback of high-power pulsed-laser cavities, whereas solar-blindness guarantees high performance in UV beam diagnostics, also under high intensity background illumination. Offering unique properties in terms of thermal conductivity and visible-light transparency, diamond represents one of the most suitable candidate for the detection of high-power UV laser emission. The relatively high resistivity of diamond in the dark has allowed the fabrication of photoconductive vertical pixel-detectors. A semitransparent light-receiving back-side contact has been used for detector biasing. Each pixel signal has been conditioned by a multi-channel read-out electronics made up of a high-sensitive integrator and a Σ-Δ A/D converter. The 500 μs conversion time has allowed a data acquisition rate up to 2 kSPS (Sample Per Second).

  11. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    SciTech Connect

    Szelezniak, Michal A.; Besson, Auguste; Colledani, Claude; Dorokhov, Andrei; Dulinski, Wojciech; Greiner, Leo C.; Himmi, Abdelkader; Hu, Christine; Matis, Howard S.; Ritter, Hans Georg; Rose, Andrew; Shabetai, Alexandre; Stezelberger, Thorsten; Sun, Xiangming; Thomas, Jim H.; Valin, Isabelle; Vu, Chinh Q.; Wieman, Howard H.; Winter, Marc

    2008-10-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations ofMAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of three small MAPS sensors arranged in three parallel and coaxial planes with a readout system based on the readout architecture for PIXEL. This proposed readout architecture is simple and scales to the size required to readout the final detector. The real-time hit finding algorithm necessary for data rate reduction in the 400 million pixel detector is described, and aspects of the PIXEL system integration into the existing STAR framework are addressed. The complete system has been recently tested and shown to be fully functional.

  12. The data acquisition system of the Belle II Pixel Detector

    NASA Astrophysics Data System (ADS)

    Münchow, D.; Dingfelder, J.; Geßler, T.; Konorov, I.; Kühn, W.; Lange, S.; Lautenbach, K.; Levit, D.; Liu, Z.; Marinas, C.; Schnell, M.; Spruck, B.; Zhao, J.

    2014-08-01

    At the future Belle II experiment the DEPFET (DEPleted Field Effect Transistor) pixel detector will consist of about 8 million channels and is placed as the innermost detector. Because of its small distance to the interaction region and the high luminosity in Belle II, for a trigger rate of about 30 kHz with an estimated occupancy of about 3 % a data rate of about 22 GB/s is expected. Due to the high data rate, a data reduction factor higher than 30 is needed in order to stay inside the specifications of the event builder. The main hardware to reduce the data rate is a xTCA based Compute Node (CN) developed in cooperation between IHEP Beijing and University Giessen. Each node has as main component a Xilinx Virtex-5 FX70T FPGA and is equipped with 2 × 2 GB RAM , GBit Ethernet and 4 × 6.25 Gb/s optical links. An ATCA carrier board is able to hold up to four CN and supplies high bandwidth connections between the four CNs and to the ATCA backplane. To achieve the required data reduction on the CNs, regions of interest (ROI) are used. These regions are calculated in two independent systems by projecting tracks back to the pixel detector. One is the High Level Trigger (HLT) which uses data from the Silicon Vertex Detector (SVD), a silicon strip detector, and outer detectors. The other is the Data Concentrator (DATCON) which calculates ROIs based on SVD data only, in order to get low momentum tracks. With this information, only PXD data inside these ROIs will be forwarded to the event builder, while data outside of these regions will be discarded. First results of the test beam time in January 2014 at DESY with a Belle II vertex detector prototype and full DAQ chain will be presented.

  13. A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

    PubMed

    Chuah, Joon Huang; Holburn, David

    2013-06-01

    This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope. PMID:23553907

  14. FITPix — fast interface for Timepix pixel detectors

    NASA Astrophysics Data System (ADS)

    Kraus, V.; Holik, M.; Jakubek, J.; Kroupa, M.; Soukup, P.; Vykydal, Z.

    2011-01-01

    The semiconductor pixel detector Timepix contains an array of 256 × 256 square pixels with pitch 55 μm. In addition to high spatial granularity the single quantum counting detector Timepix can provide also energy or time information in each pixel. This device is a powerful tool for radiation and particle detection, imaging and tracking. A new readout interface for silicon pixel detectors of the Medipix family has been developed in our group in order to provide a higher frame rate and enhanced flexibility of operation. The interface consists of a field programmable gate array, a USB 2.0 interface chip, DAC, ADC and a circuit which generates bias voltage for the sensor. The main control system is placed in the FPGA circuit which fully controls the Timepix device. This approach offers an easy way how to include new functionality and extended operation. The interface for Timepix supports all operation modes of the detector (counting, TOT, timing). The FITPix is a successor of the USB 1.22 Interface and the electronic readout is built with the latest available components, which allows achieving up to 90 frames per second with a single detector. The frame rate is about 20 times faster compared to the previous system while it maintains all same capabilities supported. In addition FITPix newly enables an adjustable clock frequency and hardware triggering which is a useful tool when there is the need for synchronized operation of multiple devices. Three modes of hardware trigger have been implemented: hardware trigger which starts the measurement, hardware trigger which terminates the measurement and hardware trigger which controls measurement fully. The entire system is fully powered through the USB bus. FITPix supports also readout from several detectors in chain in which case just an external power source is required. FITPix is a fully flexible device and the user needs no other equipment. FITPix combines high performance and mobility and it opens new fields of

  15. A semiconductor radiation imaging pixel detector for space radiation dosimetry.

    PubMed

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented. PMID:26256630

  16. A semiconductor radiation imaging pixel detector for space radiation dosimetry

    NASA Astrophysics Data System (ADS)

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

  17. 3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

    SciTech Connect

    Micelli, A.; Helle, K.; Sandaker, H.; Stugu, B.; Barbero, M.; Hugging, F.; Karagounis, M.; Kostyukhin, V.; Kruger, H.; Tsung, J.W.; Wermes, N.; Capua, M.; Fazio, S.; Mastroberardino, A.; Susinno, G.; Gallrapp, C.; Di Girolamo, B.; Dobos, D.; La Rosa, A.; Pernegger, H.; Roe, S.; /CERN /Prague, Tech. U. /Prague, Tech. U. /Freiburg U. /Freiburg U. /Freiburg U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /INFN, Genoa /Genoa U. /Glasgow U. /Glasgow U. /Glasgow U. /Hawaii U. /Barcelona, IFAE /Barcelona, IFAE /LBL, Berkeley /Barcelona, IFAE /LBL, Berkeley /LBL, Berkeley /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /Manchester U. /New Mexico U. /New Mexico U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /Oslo U. /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SLAC /SUNY, Stony Brook /SUNY, Stony Brook /SUNY, Stony Brook /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trento /Trento U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /INFN, Trieste /Udine U. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Barcelona, Inst. Microelectron. /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /Fond. Bruno Kessler, Trento /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /SINTEF, Oslo /VTT Electronics, Espoo /VTT Electronics, Espoo

    2012-04-30

    The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

  18. Imaging performance of the hybrid pixel detectors XPAD3-S

    NASA Astrophysics Data System (ADS)

    Brunner, F. Cassol; Clemens, J. C.; Hemmer, C.; Morel, C.

    2009-03-01

    Hybrid pixel detectors, originally developed for tracking particles in high-energy physics experiments, have recently been used in material sciences and macromolecular crystallography. Their capability to count single photons and to apply a threshold on the photon energy suggests that they could be optimal digital x-ray detectors in low energy beams such as for small animal computed tomography (CT). To investigate this issue, we have studied the imaging performance of photon counting hybrid pixel detectors based on the XPAD3-S chip. Two detectors are considered, connected either to a Si or to a CdTe sensor, the latter being of interest for its higher efficiency. Both a standard 'International Electrotechnical Commission' (IEC) mammography beam and a beam used for mouse CT results published in the literature are employed. The detector stability, linearity and noise are investigated as a function of the dose for several imaging exposures (~0.1-400 µGy). The perfect linearity of both detectors is confirmed, but an increase in internal noise for counting statistics higher than ~5000 photons has been found, corresponding to exposures above ~110 µGy and ~50 µGy for the Si and CdTe sensors, respectively. The noise power spectrum (NPS), the modulation transfer function (MTF) and the detective quantum efficiency (DQE) are then measured for two energy threshold configurations (5 keV and 18 keV) and three doses (~3, 30 and 300 µGy), in order to obtain a complete estimation of the detector performances. In general, the CdTe sensor shows a clear superiority with a maximal DQE(0) of ~1, thanks to its high efficiency (~100%). The DQE of the Si sensor is more dependent on the radiation quality, due to the energy dependence of its efficiency its maximum is ~0.4 with respect to the softer radiation. Finally, we compare the XPAD3-S DQE with published curves of other digital devices in a similar radiation condition. The XPAD3-S/CdTe detector appears to be the best with the highest

  19. Energy calibration of the pixels of spectral X-ray detectors.

    PubMed

    Panta, Raj Kumar; Walsh, Michael F; Bell, Stephen T; Anderson, Nigel G; Butler, Anthony P; Butler, Philip H

    2015-03-01

    The energy information acquired using spectral X-ray detectors allows noninvasive identification and characterization of chemical components of a material. To achieve this, it is important that the energy response of the detector is calibrated. The established techniques for energy calibration are not practical for routine use in pre-clinical or clinical research environment. This is due to the requirements of using monochromatic radiation sources such as synchrotron, radio-isotopes, and prohibitively long time needed to set up the equipment and make measurements. To address these limitations, we have developed an automated technique for calibrating the energy response of the pixels in a spectral X-ray detector that runs with minimal user intervention. This technique uses the X-ray tube voltage (kVp) as a reference energy, which is stepped through an energy range of interest. This technique locates the energy threshold where a pixel transitions from not-counting (off) to counting (on). Similarly, we have developed a technique for calibrating the energy response of individual pixels using X-ray fluorescence generated by metallic targets directly irradiated with polychromatic X-rays, and additionally γ-rays from (241)Am. This technique was used to measure the energy response of individual pixels in CdTe-Medipix3RX by characterizing noise performance, threshold dispersion, gain variation and spectral resolution. The comparison of these two techniques shows the energy difference of 1 keV at 59.5 keV which is less than the spectral resolution of the detector (full-width at half-maximum of 8 keV at 59.5 keV). Both techniques can be used as quality control tools in a pre-clinical multi-energy CT scanner using spectral X-ray detectors. PMID:25051546

  20. Monolithic pixel detectors in a deep submicron SOI process

    SciTech Connect

    Deptuch, Grzegorz; /Fermilab

    2009-10-01

    A compact charge-signal processing chain, composed of a two-stage semi-gaussian preamplifier-signal shaping filter, a discriminator and a binary counter, implemented in a prototype pixel detector using 0.20 {micro}m CMOS Silicon on Insulator process, is presented. The gain of the analog chain was measured 0.76 V/fC at the signal peaking time about 300 ns and the equivalent noise charge referred to the input of 80 e{sup -1}.

  1. Position-Sensitive Nuclear Spectroscopy with Pixel Detectors

    SciTech Connect

    Granja, Carlos; Vykydal, Zdenek; Jakubek, Jan; Pospisil, Stanislav

    2007-10-26

    State-of-the-art hybrid semiconductor pixel detectors such as Medipix2 are suitable for energy- and position-sensitive nuclear spectroscopy. In addition to excellent energy- and spatial-resolution, these devices can operate in spectroscopic, single-quantum counting and/or on-line tracking mode. A devoted compact USB-readout interface provides functionality and ease of operation. The compact and versatile Medipix2/USB radiation camera provides visualization, vacuum and room-temperature operation as a real-time portable active nuclear emulsion.

  2. Development of a cadmium telluride pixel detector for astrophysical applications

    NASA Astrophysics Data System (ADS)

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  3. Heavily irradiated N-in-p thin planar pixel sensors with and without active edges

    NASA Astrophysics Data System (ADS)

    Terzo, S.; Andricek, L.; Macchiolo, A.; Moser, H. G.; Nisius, R.; Richter, R. H.; Weigell, P.

    2014-05-01

    We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 μm, produced at MPP/HLL, and 100-200 μm thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 μm thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4 × 1015 neq/cm2, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5 × 1015 neq/cm2 has been performed using radioactive sources in the laboratory.

  4. Simulation of the dynamic inefficiency of the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Bartók, M.

    2015-05-01

    The Pixel Detector is the innermost part of the CMS Tracker. It therefore has to prevail in the harshest environment in terms of particle fluence and radiation. There are several mechanisms that may decrease the efficiency of the detector. These are mainly caused by data acquisition (DAQ) problems and/or Single Event Upsets (SEU). Any remaining efficiency loss is referred to as the dynamic inefficiency. It is caused by various mechanisms inside the Readout Chip (ROC) and depends strongly on the data occupancy. In the 2012 data, at high values of instantaneous luminosity the inefficiency reached 2% (in the region closest to the interaction point) which is not negligible. In the 2015 run higher instantaneous luminosity is expected, which will result in lower efficiencies; therefore this effect needs to be understood and simulated. A data-driven method has been developed to simulate dynamic inefficiency, which has been shown to successfully simulate the effects.

  5. The pixel detector for the CMS phase-II upgrade

    NASA Astrophysics Data System (ADS)

    Dinardo, M. E.

    2015-04-01

    The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb-1, that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×1016 1 MeV eq.n. / cm2, or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article.

  6. Charge amplitude distribution of the Gossip gaseous pixel detector

    NASA Astrophysics Data System (ADS)

    Blanco Carballo, V. M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S. M.; Timmermans, J.; Visschers, J. L.

    2007-12-01

    The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2/DME (dimethyl-ether) and Ar/iC 4H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

  7. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    NASA Astrophysics Data System (ADS)

    Lange, J.; Cavallaro, E.; Grinstein, S.; López Paz, I.

    2015-03-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 μm width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 μm width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 1015 neq/cm2 with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al masks. The efficiency in the irradiated region is found to be similar to the one in the non-irradiated region and exceeds 97% in case of favourable chip-parameter settings. Only in a narrow transition area at the edge of the hole in the Al mask, a significantly lower efficiency is seen. A follow-up study of this effect using arrays of small pad diodes for position-resolved dosimetry via the leakage current is carried out.

  8. Towards hybrid pixel detectors for energy-dispersive or soft X-ray photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Huthwelker, T; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2016-03-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications at free-electron lasers and synchrotron light sources. The JUNGFRAU 0.4 prototype presented here is specifically geared towards low-noise performance and hence soft X-ray detection. The design, geometry and readout architecture of JUNGFRAU 0.4 correspond to those of other JUNGFRAU pixel detectors, which are charge-integrating detectors with 75 µm × 75 µm pixels. Main characteristics of JUNGFRAU 0.4 are its fixed gain and r.m.s. noise of as low as 27 e(-) electronic noise charge (<100 eV) with no active cooling. The 48 × 48 pixels JUNGFRAU 0.4 prototype can be combined with a charge-sharing suppression mask directly placed on the sensor, which keeps photons from hitting the charge-sharing regions of the pixels. The mask consists of a 150 µm tungsten sheet, in which 28 µm-diameter holes are laser-drilled. The mask is aligned with the pixels. The noise and gain characterization, and single-photon detection as low as 1.2 keV are shown. The performance of JUNGFRAU 0.4 without the mask and also in the charge-sharing suppression configuration (with the mask, with a `software mask' or a `cluster finding' algorithm) is tested, compared and evaluated, in particular with respect to the removal of the charge-sharing contribution in the spectra, the detection efficiency and the photon rate capability. Energy-dispersive and imaging experiments with fluorescence X-ray irradiation from an X-ray tube and a synchrotron light source are successfully demonstrated with an r.m.s. energy resolution of 20% (no mask) and 14% (with the mask) at 1.2 keV and of 5% at 13.3 keV. The performance evaluation of the JUNGFRAU 0.4 prototype suggests that this detection system could be the starting point for a future detector development effort for either applications in the soft X-ray energy regime or for an energy

  9. A germanium hybrid pixel detector with 55μm pixel size and 65,000 channels

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Struth, B.; Hirsemann, H.; Sarajlic, M.; Smoljanin, S.; Zuvic, M.; Lampert, M. O.; Fritzsch, T.; Rothermund, M.; Graafsma, H.

    2014-12-01

    Hybrid pixel semiconductor detectors provide high performance through a combination of direct detection, a relatively small pixel size, fast readout and sophisticated signal processing circuitry in each pixel. For X-ray detection above 20 keV, high-Z sensor layers rather than silicon are needed to achieve high quantum efficiency, but many high-Z materials such as GaAs and CdTe often suffer from poor material properties or nonuniformities. Germanium is available in large wafers of extremely high quality, making it an appealing option for high-performance hybrid pixel X-ray detectors, but suitable technologies for finely pixelating and bump-bonding germanium have not previously been available. A finely-pixelated germanium photodiode sensor with a 256 by 256 array of 55μm pixels has been produced. The sensor has an n-on-p structure, with 700μm thickness. Using a low-temperature indium bump process, this sensor has been bonded to the Medipix3RX photoncounting readout chip. Tests with the LAMBDA readout system have shown that the detector works successfully, with a high bond yield and higher image uniformity than comparable high-Z systems. During cooling, the system is functional around -80°C (with warmer temperatures resulting in excessive leakage current), with -100°C sufficient for good performance.

  10. Multilayer fluorescence imaging on a single-pixel detector

    PubMed Central

    Guo, Kaikai; Jiang, Shaowei; Zheng, Guoan

    2016-01-01

    A critical challenge for fluorescence imaging is the loss of high frequency components in the detection path. Such a loss can be related to the limited numerical aperture of the detection optics, aberrations of the lens, and tissue turbidity. In this paper, we report an imaging scheme that integrates multilayer sample modeling, ptychography-inspired recovery procedures, and lensless single-pixel detection to tackle this challenge. In the reported scheme, we directly placed a 3D sample on top of a single-pixel detector. We then used a known mask to generate speckle patterns in 3D and scanned this known mask to different positions for sample illumination. The sample was then modeled as multiple layers and the captured 1D fluorescence signals were used to recover multiple sample images along the z axis. The reported scheme may find applications in 3D fluorescence sectioning, time-resolved and spectrum-resolved imaging. It may also find applications in deep-tissue fluorescence imaging using the memory effect.

  11. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    NASA Astrophysics Data System (ADS)

    Tehrani, N. Alipour; Arfaoui, S.; Benoit, M.; Dannheim, D.; Dette, K.; Hynds, D.; Kulis, S.; Perić, I.; Petrič, M.; Redford, S.; Sicking, E.; Valerio, P.

    2016-07-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at -60 V substrate bias, with a single hit resolution of 6.1 μm . Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  12. Multilayer fluorescence imaging on a single-pixel detector.

    PubMed

    Guo, Kaikai; Jiang, Shaowei; Zheng, Guoan

    2016-07-01

    A critical challenge for fluorescence imaging is the loss of high frequency components in the detection path. Such a loss can be related to the limited numerical aperture of the detection optics, aberrations of the lens, and tissue turbidity. In this paper, we report an imaging scheme that integrates multilayer sample modeling, ptychography-inspired recovery procedures, and lensless single-pixel detection to tackle this challenge. In the reported scheme, we directly placed a 3D sample on top of a single-pixel detector. We then used a known mask to generate speckle patterns in 3D and scanned this known mask to different positions for sample illumination. The sample was then modeled as multiple layers and the captured 1D fluorescence signals were used to recover multiple sample images along the z axis. The reported scheme may find applications in 3D fluorescence sectioning, time-resolved and spectrum-resolved imaging. It may also find applications in deep-tissue fluorescence imaging using the memory effect. PMID:27446679

  13. A generic readout environment for prototype pixel detectors

    NASA Astrophysics Data System (ADS)

    Turqueti, Marcos; Rivera, Ryan; Prosser, Alan; Kwan, Simon

    2010-11-01

    Pixel detectors for experimental particle physics research have been implemented with a variety of readout formats and potentially generate massive amounts of data. Examples include the PSI46 device for the Compact Muon Solenoid (CMS) experiment which implements an analog readout, the Fermilab FPIX2.1 device with a digital readout, and the Fermilab Vertically Integrated Pixel device. The Electronic Systems Engineering Department of the Computing Division at the Fermi National Accelerator Laboratory has developed a data acquisition system flexible and powerful enough to meet the various needs of these devices to support laboratory test bench as well as test beam applications. The system is called CAPTAN (Compact And Programmable daTa Acquisition Node) and is characterized by its flexibility, versatility and scalability by virtue of several key architectural features. These include a vertical bus that permits the user to stack multiple boards, a gigabit Ethernet link that permits high speed communications to the system and a core group of boards that provide specific processing and readout capabilities for the system. System software based on distributed computing techniques supports an expandable network of CAPTANs. In this paper, we describe the system architecture and give an overview of its capabilities.

  14. Towards a new generation of pixel detector readout chips

    NASA Astrophysics Data System (ADS)

    Campbell, M.; Alozy, J.; Ballabriga, R.; Frojdh, E.; Heijne, E.; Llopart, X.; Poikela, T.; Tlustos, L.; Valerio, P.; Wong, W.

    2016-01-01

    The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile-ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed.

  15. Design, simulation, fabrication, and preliminary tests of 3D CMS pixel detectors for the super-LHC

    SciTech Connect

    Koybasi, Ozhan; Bortoletto, Daniela; Hansen, Thor-Erik; Kok, Angela; Hansen, Trond Andreas; Lietaer, Nicolas; Jensen, Geir Uri; Summanwar, Anand; Bolla, Gino; Kwan, Simon Wing Lok; /Fermilab

    2010-01-01

    The Super-LHC upgrade puts strong demands on the radiation hardness of the innermost tracking detectors of the CMS, which cannot be fulfilled with any conventional planar detector design. The so-called 3D detector architectures, which feature columnar electrodes passing through the substrate thickness, are under investigation as a potential solution for the closest operation points to the beams, where the radiation fluence is estimated to reach 10{sup 16} n{sub eq}/cm{sup 2}. Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks. The fabrication of full-3D active edge CMS pixel devices with p-type substrate has been successfully completed at SINTEF. In this paper, we study the expected post-irradiation behaviors of these devices with simulations and, after a brief description of their fabrication, we report the first leakage current measurement results as performed on wafer.

  16. Development of a cylindrical tracking detector with multichannel scintillation fibers and pixelated photon detector readout

    NASA Astrophysics Data System (ADS)

    Akazawa, Y.; Miwa, K.; Honda, R.; Shiozaki, T.; Chiga, N.

    2015-07-01

    We are developing a cylindrical tracking detector for a Σp scattering experiment in J-PARC with scintillation fibers and the Pixelated Photon Detector (PPD) readout, which is called as cylindrical fiber tracker (CFT), in order to reconstruct trajectories of charged particles emitted inside CFT. CFT works not only as a tracking detector but also a particle identification detector from energy deposits. A prototype CFT consisting of two straight layers and one spiral layer was constructed. About 1100 scintillation fibers with a diameter of 0.75 mm (Kuraray SCSF-78 M) were used. Each fiber signal was read by Multi-Pixel Photon Counter (MPPC, HPK S10362-11-050P, 1×1 mm2, 400 pixels) fiber by fiber. MPPCs were handled with Extended Analogue Silicon Photomultipliers Integrated ReadOut Chip (EASIROC) boards, which were developed for the readout of a large number of MPPCs. The energy resolution of one layer was 28% for a 70 MeV proton where the energy deposit in fibers was 0.7 MeV.

  17. High-speed readout of high-Z pixel detectors with the LAMBDA detector

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Smoljanin, S.; Sheviakov, I.; Xia, Q.; Rothkirch, A.; Yu, Y.; Struth, B.; Hirsemann, H.; Graafsma, H.

    2014-12-01

    High-frame-rate X-ray pixel detectors make it possible to perform time-resolved experiments at synchrotron beamlines, and to make better use of these sources by shortening experiment times. LAMBDA is a photon-counting hybrid pixel detector based on the Medipix3 chip, designed to combine a small pixel size of 55 μm, a large tileable module design, high speed, and compatibility with ``high-Z'' sensors for hard X-ray detection. This technical paper focuses on LAMBDA's high-speed-readout functionality, which allows a frame rate of 2000 frames per second with no deadtime between successive images. This takes advantage of the Medipix3 chip's ``continuous read-write'' function and highly parallelised readout. The readout electronics serialise this data and send it back to a server PC over two 10 Gigabit Ethernet links. The server PC controls the detector and receives, processes and stores the data using software designed for the Tango control system. As a demonstration of high-speed readout of a high-Z sensor, a GaAs LAMBDA detector was used to make a high-speed X-ray video of a computer fan.

  18. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  19. Methodological Study of a Single Photon Counting Pixel Detector at SPring-8

    SciTech Connect

    Toyokawa, H.; Suzuki, M.; Broennimann, Ch.; Eikenberry, E. F.; Henrich, B.; Huelsen, G.; Kraft, P.

    2007-01-19

    PILATUS (Pixel Apparatus for the SLS) is a challenging project to develop a large area single photon counting pixel detector for synchrotron radiation experiments. SPring-8 examined the PLATUS single module detectors in collaboration with the Paul Scherrer Institute. The PILATUS-II single module detector has a desired performance with almost zero defective pixels and a fast frame rate up to 100 Hz using a newly developed PCI readout system on a Linux-PC. The maximum counting rate achieves more than 2 x 106 X-rays/s/pixel.

  20. A Medium-Format, Mixed-Mode Pixel Array Detector for Kilohertz X-ray Imaging

    NASA Astrophysics Data System (ADS)

    Tate, M. W.; Chamberlain, D.; Green, K. S.; Philipp, H. T.; Purohit, P.; Strohman, C.; Gruner, S. M.

    2013-03-01

    An x-ray pixel array detector (PAD) capable of framing up to 1 kHz is described. This hybrid detector is constructed from a 3-side buttable, 128×128 pixel module based upon the mixed-mode pixel array detector (MMPAD) chip developed jointly by Cornell and Area Detector Systems Corporation (Poway, CA). The chip uses a charge integrating front end for a high instantaneous count rate yet with single photon sensitivity. In-pixel circuitry utilizing a digital overflow counter extends the per frame dynamic range to >4×107 x-rays/pixel. Results are shown from a base configuration of a 2×3 module array (256×384 pixels).

  1. Beam test results for the BTeV silicon pixel detector

    SciTech Connect

    Jeffrey A. Appel, G. Chiodini et al.

    2000-09-28

    The authors report the results of the BTeV silicon pixel detector tests carried out in the MTest beam at Fermilab in 1999--2000. The pixel detector spatial resolution has been studied as a function of track inclination, sensor bias, and readout threshold.

  2. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    NASA Astrophysics Data System (ADS)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  3. Adhesive Testing for the BTeV Pixel Detector

    SciTech Connect

    Lei, C.M.; Kwan, Simon; Hicks, D.; Hahn, Eileen; Hoffman, Jay; Austin, Sharon; Jones, Renee; /Fermilab

    2005-12-01

    The basic unit of the BTeV pixel detector is a multi-chip module which is comprised of a silicon sensor module bump-bonded to a number of readout chips. The pixel module will then be glued to a high intensity interconnect (HDI) cable using electrically conductive adhesive, and then onto a substrate using another kind of adhesive with reasonable thermal conductivity. This report is mostly addressed to the need of the latter--the substrate adhesive. The aim of this technical note is to summarize the testing efforts and results of this substrate adhesive covering a period since 2001 till the end of 2004. The substrate will serve two purposes: mechanical support and cooling of the modules. Stresses and strains will be generated when there is a thermal change on the substrate. In addition, since there are many kinds of materials, with different coefficient of thermal expansion (CTE), being glued together to form the complete detector assembly, the substrate may get distorted due to the CTE mismatches. As stress is directly proportional to the material modulus, a significant amount of effort was concentrated in understanding the adhesive modulus. There are other constraints which need to be considered as well. For instance, the detector will be placed in a vacuum close to the beam, and it will be exposed to significant radiation during operation. As there are so many requirements on the adhesive, it is certainly not that easy to find one that meets all the demands. With a reasonable screening that the adhesive candidates being radiation hard and have low outgassing, searching for suitable adhesives was focused on those with low modulus. That is because (1) a mechanically reliable and fail-proof adhesive structure with low stress is needed, and (2) the leaking current characteristics of the modules will increase if mechanical stresses are too high. However, much of the technical information needed is usually not available from the vendor and therefore testing on our own

  4. Commissioning of the upgraded ATLAS Pixel Detector for Run2 at LHC

    NASA Astrophysics Data System (ADS)

    Dobos, Daniel

    2016-07-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long showdown, the detector was extracted from the experiment and brought to the surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer, a fourth layer of pixel detectors, installed in May 2014 between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as early performance tests using cosmic rays and beam data will be presented.

  5. Radiation tolerance of prototype BTeV pixel detector readout chips

    SciTech Connect

    Gabriele Chiodini et al.

    2002-07-12

    High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.

  6. Small-Scale Readout System Prototype for the STAR PIXEL Detector

    SciTech Connect

    Szelezniak, Michal; Anderssen, Eric; Greiner, Leo; Matis, Howard; Ritter, Hans Georg; Stezelberger, Thorsten; Sun, Xiangming; Thomas, James; Vu, Chinh; Wieman, Howard

    2008-10-10

    Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed.

  7. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    NASA Astrophysics Data System (ADS)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  8. Performance and qualification of CdTe pixel detectors for the Spectrometer/Telescope for Imaging X-rays

    NASA Astrophysics Data System (ADS)

    Grimm, O.; Bednarzik, M.; Birrer, G.; Arnold, N.; Commichau, V.; Hurford, G.; Krucker, S.; Limousin, O.; Meuris, A.

    2015-02-01

    The Spectrometer/Telescope for Imaging X-rays (STIX) is a remote sensing instrument on-board the ESA Solar Orbiter spacecraft. STIX is designated to the study of energetic phenomena in solar flares. A Fourier-imaging technique using tungsten grid collimators in front of CdTe pixel detectors is employed, covering the 4 to 150 keV energy range with a full-width-half maximum resolution around 1 keV at low energies. Acrorad CdTe detectors of 1 mm thickness with a planar aluminum Schottky contact are used as basis for a subsequent patterning process into eight large pixels, four small pixels, and a guard ring. The patterning is done by means of microfabrication technologies. The area of the patterned sensor is 10×10 mm2. Test equipment has been developed for selecting the detectors with best performance prior to integration with the read-out system, and for qualification purposes. The set-up allows pixel-based dark current measurements at low temperatures. Pixel dark currents below 60 pA are needed to avoid excess noise in the read-out ASIC. The best pixels show dark currents below 10 pA at 300 V bias and -20 °C. Spectroscopic measurements with 133Ba sources confirm the good performance. This paper briefly explains the mission context of the CdTe detectors and then gives details of the production and testing procedures. Typical results are shown, with emphasis on performance degradation studies from displacement damage by proton irradiation. This is expected to be the dominant degradation mechanism for this application.

  9. Prototypes for components of a control system for the ATLAS pixel detector at the HL-LHC

    NASA Astrophysics Data System (ADS)

    Püllen, Lukas; Boek, Jennifer; Kersten, Susanne; Kind, Peter; Mättig, Peter; Zeitnitz, Christian

    2013-12-01

    In the years around 2020 an upgrade of the LHC to the HL-LHC is scheduled, which will increase the accelerator's instantaneous luminosity by a factor of 5 and the integrated luminosity by a factor of 10. In the context of this upgrade, the inner detector (including the pixel detector) of the ATLAS experiment will be replaced. This new pixel detector requires a specific control system which complies with strict requirements in terms of radiation hardness, material budget and space for the electronics in the ATLAS experiment. The University of Wuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS chip which is located on the pixel detector, very close to the interaction point. The second ASIC is the DCS Controller which is controlling 4×4 DCS chips from the outer regions of ATLAS via differential data lines. Both ASICs are manufactured in 130 nm deep sub-micron technology. We present results from reliability measurements under irradiation from new prototypes of components for the DCS network.

  10. Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure

    NASA Astrophysics Data System (ADS)

    Tohyama, Shigeru; Sasaki, Tokuhito; Endoh, Tsutomu; Sano, Masahiko; Kato, Koji; Kurashina, Seiji; Miyoshi, Masaru; Yamazaki, Takao; Ueno, Munetaka; Katayama, Haruyoshi; Imai, Tadashi

    2013-12-01

    An uncooled infrared (IR) focal plane array (FPA) with 23.5 μm pixel pitch has been successfully demonstrated and has found wide commercial applications in the areas of thermography, security cameras, and other applications. One of the key issues for uncooled IRFPA technology is to shrink the pixel pitch because the size of the pixel pitch determines the overall size of the FPA, which, in turn, determines the cost of the IR camera products. This paper proposes an innovative pixel structure with a diaphragm and beams placed in different levels to realize an uncooled IRFPA with smaller pixel pitch (≦17 μm). The upper level consists of a diaphragm with VOx bolometer and IR absorber layers, while the lower level consists of the two beams, which are designed to be placed on the adjacent pixels. The test devices of this pixel design with 12, 15, and 17 μm pitch have been fabricated on the Si read-out integrated circuit (ROIC) of quarter video graphics array (QVGA) (320×240) with 23.5 μm pitch. Their performances are nearly equal to those of the IRFPA with 23.5 μm pitch. For example, a noise equivalent temperature difference of 12 μm pixel is 63.1 mK for F/1 optics with the thermal time constant of 14.5 ms. Then, the proposed structure is shown to be effective for the existing IRFPA with 23.5 μm pitch because of the improvements in IR sensitivity. Furthermore, the advanced pixel structure that has the beams composed of two levels are demonstrated to be realizable.

  11. Using an Active Pixel Sensor In A Vertex Detector

    SciTech Connect

    Matis, Howard S.; Bieser, Fred; Chen, Yandong; Gareus, Robin; Kleinfelder, Stuart; Oldenburg, Markus; Retiere, Fabrice; Ritter, HansGeorg; Wieman, Howard H.; Wurzel, Samuel E.; Yamamoto, Eugene

    2004-04-22

    Research has shown that Active Pixel CMOS sensors can detect charged particles. We have been studying whether this process can be used in a collider environment. In particular, we studied the effect of radiation with 55 MeV protons. These results show that a fluence of about 2 x 10{sup 12} protons/cm{sup 2} reduces the signal by a factor of two while the noise increases by 25%. A measurement 6 months after exposure shows that the silicon lattice naturally repairs itself. Heating the silicon to 100 C reduced the shot noise and increased the collected charge. CMOS sensors have a reduced signal to noise ratio per pixel because charge diffuses to neighboring pixels. We have constructed a photogate to see if this structure can collect more charge per pixel. Results show that a photogate does collect charge in fewer pixels, but it takes about 15 ms to collect all of the electrons produced by a pulse of light.

  12. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    NASA Astrophysics Data System (ADS)

    Schwenke, M.; Zuber, K.; Janutta, B.; He, Z.; Zeng, F.; Anton, G.; Michel, T.; Durst, J.; Lück, F.; Gleixner, T.; Gössling, C.; Schulz, O.; Köttig, T.; Krawczynski, H.; Martin, J.; Stekl, I.; Cermak, P.

    2011-09-01

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  13. Defective pixel map creation based on wavelet analysis in digital radiography detectors

    NASA Astrophysics Data System (ADS)

    Park, Chun Joo; Lee, Hyoung Koo; Song, William Y.; Achterkirchen, Thorsten Graeve; Kim, Ho Kyung

    2011-04-01

    The application of digital radiography detectors has attracted increasing attention in both medicine and industry. Since the imaging detectors are fabricated by semiconductor manufacturing process over large areas, defective pixels in the detectors are unavoidable. Moreover, the radiation damage due to the routine use of the detectors progressively increases the density of defective pixels. In this study, we present a method of identifying defective pixels in digital radiography detectors based on wavelet analysis. Artifacts generated due to wavelet transformations have been prevented by an additional local threshold method. The proposed method was applied to a sample digital radiography and the result was promising. The proposed method uses a single pair of dark and white images and does not require them to be corrected in gain-and-offset properties. This method will be helpful for the reliable use of digital radiography detectors through the working lifetime.

  14. The pixel detector readout ASIC for the MicroVertex Detector of the PANDA experiment

    NASA Astrophysics Data System (ADS)

    Mazza, G.; Calvo, D.; De Remigis, P.; Kugathasan, T.; Mignone, M.; Rivetti, A.; Toscano, L.; Wheadon, R.

    2013-08-01

    The silicon pixel detector of the PANDA experiment is characterized by both high track density and the absence of a hardware trigger signal, thus leading to a huge amount of data to be acquired and transmitted to the DAQ. In order to cope with such challenging requirements, an ASIC based custom solution for the electronic readout has been chosen. The ASIC, named ToPiX, will provide the time position of each hit and a measure of the charge released with the Time over Threshold (ToT) technique. A reduced scale prototype in a CMOS 0.13 μm technology has been designed and tested. The prototype includes four columns made of 128 pixel cells, four columns of 32 cells and the end of column readout with a 32 cells deep FIFO for each double column. Each cell embeds a charge amplifier with constant current feedback capacitor discharge, a comparator with per cell adjustable threshold, 12-bits leading and trailing edge register for time and ToT measurement and an 8 bits configuration register. All the readout logic has been SEU-hardened by design using either Hamming encoding or triple modular redundancy. The chip has been tested both electrically via a test pulse input and connected to a detector in a beam test.

  15. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    NASA Astrophysics Data System (ADS)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  16. Characterization of edgeless pixel detectors coupled to Medipix2 readout chip

    NASA Astrophysics Data System (ADS)

    Kalliopuska, Juha; Tlustos, Lukas; Eränen, Simo; Virolainen, Tuula

    2011-08-01

    VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of using polysilicon. The article characterizes 150 μm thick n-on-n edgeless pixel detector prototypes with a dead layer at the edge below 1 μm. Electrical and radiation response characterization of 1.4×1.4 cm2 n-on-n edgeless detectors has been done by coupling them to the Medipix2 readout chips. The distance of the detector's physical edge from the pixels was either 20 or 50 μm. The leakage current of flip-chip bonded edgeless Medipix2 detector assembles were measured to be ˜90 nA/cm2 and no breakdown was observed below 110 V. Radiation response characterization includes X-ray tube and radiation source responses. The characterization results show that the detector's response at the pixels close to the physical edge of the detector depend dramatically on the pixel-to-edge distance.

  17. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    NASA Astrophysics Data System (ADS)

    Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

    2015-04-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

  18. Imaging and spectroscopic performance studies of pixellated CdTe Timepix detector

    NASA Astrophysics Data System (ADS)

    Maneuski, D.; Astromskas, V.; Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Marchal, J.; O'Shea, V.; Stewart, G.; Tartoni, N.; Wilhelm, H.; Wraight, K.; Zain, R. M.

    2012-01-01

    In this work the results on imaging and spectroscopic performances of 14 × 14 × 1 mm CdTe detectors with 55 × 55 μm and 110 × 110 μm pixel pitch bump-bonded to a Timepix chip are presented. The performance of the 110 × 110 μm pixel detector was evaluated at the extreme conditions beam line I15 of the Diamond Light Source. The energy of X-rays was set between 25 and 77 keV. The beam was collimated through the edge slits to 20 μm FWHM incident in the middle of the pixel. The detector was operated in the time-over-threshold mode, allowing direct energy measurement. Energy in the neighbouring pixels was summed for spectra reconstruction. Energy resolution at 77 keV was found to be ΔE/E = 3.9%. Comparative imaging and energy resolution studies were carried out between two pixel size detectors with a fluorescence target X-ray tube and radioactive sources. The 110 × 110 μm pixel detector exhibited systematically better energy resolution in comparison to 55 × 55 μm. An imaging performance of 55 × 55 μm pixellated CdTe detector was assessed using the Modulation Transfer Function (MTF) technique and compared to the larger pixel. A considerable degradation in MTF was observed for bias voltages below -300 V. Significant room for improvement of the detector performance was identified both for imaging and spectroscopy and is discussed.

  19. Beam test results of the BTeV silicon pixel detector

    SciTech Connect

    Gabriele Chiodini et al.

    2000-09-28

    The authors have described the results of the BTeV silicon pixel detector beam test. The pixel detectors under test used samples of the first two generations of Fermilab pixel readout chips, FPIX0 and FPIX1, (indium bump-bonded to ATLAS sensor prototypes). The spatial resolution achieved using analog charge information is excellent for a large range of track inclination. The resolution is still very good using only 2-bit charge information. A relatively small dependence of the resolution on bias voltage is observed. The resolution is observed to depend dramatically on the discriminator threshold, and it deteriorates rapidly for threshold above 4000e{sup {minus}}.

  20. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    NASA Astrophysics Data System (ADS)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  1. Progress in the use of pixel detectors in double beta decay experiment TGV

    NASA Astrophysics Data System (ADS)

    Jose, J. M.; TGV Collaboration

    2013-12-01

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in 106Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented.

  2. 4.3 μm quantum cascade detector in pixel configuration.

    PubMed

    Harrer, A; Schwarz, B; Schuler, S; Reininger, P; Wirthmüller, A; Detz, H; MacFarland, D; Zederbauer, T; Andrews, A M; Rothermund, M; Oppermann, H; Schrenk, W; Strasser, G

    2016-07-25

    We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D* of 5⋅107 cmHz/W was measured. PMID:27464155

  3. Progress in the use of pixel detectors in double beta decay experiment TGV

    SciTech Connect

    Jose, J. M. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a Collaboration: TGV Collaboration

    2013-12-30

    The TGV collaboration has been investigating two neutrino double electron capture (2νEC/EC) in {sup 106}Cd since 2000. The double beta experiments would answer some of the puzzling problems about neutrinos (e.g. nature and mass) but one of the main challenges is the background events. The collaboration is investigating the use of pixel detectors in such rare decay experiments. Pixel detector gives spatial information along with energy of the particle, thus provides useful information to reduce the background. The collaboration has proposed a Silicon Pixel Telescope (SPT) for the next generation experiment; where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. A prototype unit of SPT has been constructed and results of preliminary background measurements performed on the surface and in the underground laboratories are presented.

  4. Si pixel detectors in the detection of EC/EC decay

    SciTech Connect

    Jose, J. M.; Čermák, P.; Fajt, L.; Štekl, I.; Rukhadze, N. I.; Shitov, Yu. A.

    2015-08-17

    The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in{sup 106}Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminary results from background measurements are presented.

  5. Pixel detectors in double beta decay experiments, a new approach for background reduction

    NASA Astrophysics Data System (ADS)

    Jose, J. M.; Čermák, P.; Štekl, I.; Shitov, Yu. A.; Rukhadze, E. N.; Rukhadze, N. I.; Brudanin, V. B.; Fiederle, M.; Fauler, A.; Loaiza, P.

    2013-08-01

    Double beta decay (ββ) experiments are challenging frontiers in contemporary physics. These experiments have the potential to investigate more about neutrinos (eg. nature and mass). The main challenge for these experiments is the reduction of background. The group at IEAP, CTU in Prague is investigating a new approach using pixel detectors Timepix. Pixel detector offer background reduction capabilities with its ability to identify the particle interaction (from the 2D signature it generates). However, use of pixel detectors has some challenges such as the presence of readout electronics near the sensing medium and heat dissipation. Different aspects of pixel setup (identification of radio-impurities, selection of radio-pure materials) and proposed experimental setup are presented. Also, results of preliminary background measurements (performed on the surface and in the underground laboratories) using the prototype setups are presented.

  6. X-ray characterization of a multichannel smart-pixel array detector.

    PubMed

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements. PMID:26698064

  7. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

    PubMed Central

    Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

    2016-01-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

  8. High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

    PubMed

    Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

    2016-03-01

    A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

  9. High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

    PubMed

    Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

    2016-02-01

    We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams. PMID:26750260

  10. X-ray Characterization of a Multichannel Smart-Pixel Array Detector

    SciTech Connect

    Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A.; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

    2016-01-01

    The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

  11. A GaAs pixel detectors-based digital mammographic system: Performances and imaging tests results

    NASA Astrophysics Data System (ADS)

    Annovazzi, A.; Amendolia, S. R.; Bigongiari, A.; Bisogni, M. G.; Catarsi, F.; Cesqui, F.; Cetronio, A.; Colombo, F.; Delogu, P.; Fantacci, M. E.; Gilberti, A.; Lanzieri, C.; Lavagna, S.; Novelli, M.; Passuello, G.; Paternoster, G.; Pieracci, M.; Poletti, M.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Testa, A.; Venturelli, L.

    2007-06-01

    The prototype presented in this paper is based on GaAs pixel detectors read-out by the PCC/MEDIPIX I circuit. The active area of a sensor is about 1 cm 2 therefore to cover the typical irradiation field used in mammography (18×24 cm 2), 18 GaAs detection units have been organized in two staggered rows of nine chips each and moved by a stepper motor in the orthogonal direction. The system is integrated in a mammographic equipment which comprehends the X-ray tube, the bias and data acquisition systems and the PC-based control system. The prototype has been developed in the framework of the Integrated Mammographic Imaging (IMI) project, an industrial research activity aiming to develop innovative instrumentation for morphologic and functional imaging. The project has been supported by the Italian Ministry of Education, University and Research (MIUR) and by five Italian High Tech companies, Alenia Marconi Systems (AMS), CAEN, Gilardoni, LABEN and Poli.Hi.Tech., in collaboration with the universities of Ferrara, Roma "La Sapienza", Pisa and the Istituto Nazionale di Fisica Nucleare (INFN). In this paper, we report on the electrical characterization and the first imaging test results of the digital mammographic system. To assess the imaging capability of such a detector we have built a phantom, which simulates the breast tissue with malignancies. The radiographs of the phantom, obtained by delivering an entrance dose of 4.8 mGy, have shown particulars with a measured contrast below 1%.

  12. Unconventional XAS applications in Physical Science using Pixel Array X-ray Detector

    NASA Astrophysics Data System (ADS)

    Oyanagi, Hiroyuki

    2007-03-01

    Fluorescence x-ray yield is a conventional technique which increases sensitivity of x-ray absorption spectroscopy (XAS). Combining high brilliance x-ray sources and state-of-the-art pixel array detector (PAD) opened up unconventional application channels in condensed matter science. PAD is a segmented detector fabricated onto a mono domain single crystal by lithography. Our Ge PAD consists of 10×10 segments with almost 100% packing ratio. The local structure of photo-induced phase transition of Fe(II) spin-crossover complex under visible light irradiation was studied. We find that the coordination symmetry is retained upon the diamagnetic (S=0)↔paramagnetic (S=2) transformation. In the application to high-temperature superconducting (La,Sr)2CuO4 thin film single crystals, the EXAFS results show that the local structure (CuO6 octahedron) is tetragonally deformed in accordance with the epitaxial strain. High-quality data without the effect of substrates were obtained by real-time monitoring segmented fluorescence signals.

  13. The Pixel Detector of the ATLAS experiment for LHC Run-2

    NASA Astrophysics Data System (ADS)

    Pernegger, H.

    2015-06-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface, to equip it with new service quarter panels, to repair modules and to ease installation of the Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 between the existing Pixel Detector and a new smaller beam pipe at a radius of 3.3 cm. To cope with the high radiation and hit occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance will be improved through the reduction of pixel size while, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system have been adopted. An overview of the refurbishing of the Pixel Detector and of the IBL project as well as the experience in its construction will be presented, focusing on adopted technologies, module and staves production, qualification of assembly procedure, integration of staves around the beam pipe and commissioning of the detector.

  14. Phase 1 Upgrade of the CMS Pixel Detector: Module Assembly and Testing

    NASA Astrophysics Data System (ADS)

    Kumar, Ashish

    2014-03-01

    The CMS pixel detector is the innermost component of the all-silicon tracking system located closest to the interaction point and thus operates in a high-occupancy/high-radiation environment created by particle collisions. The performance of the current pixel detector has been excellent during Run 1 of the LHC. However, the foreseen increases of the instantaneous and integrated luminosities at the LHC necessitate an upgrade of the pixel detector in order to maintain the excellent tracking and physics performance of the CMS detector. The new pixel detector is expected to be installed during the extended end-of-year shutdown in 2016/17. The main new features of the upgraded pixel detector would be ultra-light mechanical design with four barrel layers and three end-caps on either side of the interaction point, digital readout chip with higher rate capability and new cooling system. These and other design improvements, along with the current status on module assembly and testing, will be discussed.

  15. IV and CV curves for irradiated prototype BTeV silicon pixel sensors

    SciTech Connect

    Maria R. Coluccia et al.

    2002-07-16

    The authors present IV and CV curves for irradiated prototype n{sup +}/n/p{sup +} silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.

  16. Search for new, long-lived, charged particles using ionization in the ATLAS Pixel Detector

    NASA Astrophysics Data System (ADS)

    Axen, Bradley; Atlas Collaboration

    2016-03-01

    Several extensions of the Standard Model predict the existence of charged, very massive, and long-lived particles. Because of their high masses these particles would propagate non-relativistically through the ATLAS pixel detector and are therefore be identifiable through a measurement of large specific energy loss. Measuring heavy, long-lived particles through their track parameters in the pixel detector allows sensitivity to particles with lifetimes in the nanosecond range and above. This search presents an inner detector driven method for identifying such particles in proton-proton collisions at 13 TeV with the 2015 dataset corresponding to an integrated luminosity of 3.5 pb-1.

  17. High efficiency neutron sensitive amorphous silicon pixel detectors

    SciTech Connect

    Mireshghi, A.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Lee, H.; Kaplan, S.N.; Perez-Mendez, V.

    1993-11-01

    A multi-layer a-Si:H based thermal neutron detector was designed, fabricated and simulated by Monte Carlo method. The detector consists of two PECVD deposited a-Si:H pin detectors interfaced with coated layers of Gd, as a thermal neutron converter. Simulation results indicate that a detector consisting of 2 Gd films with thicknesses of 2 and 4 {mu}m, sandwiched properly with two layers of sufficiently thick ({approximately}30{mu}m) amorphous silicon diodes, has the optimum parameters. The detectors have an intrinsic efficiency of about 42% at a threshold setting of 7000 electrons, with an expected average signal size of {approximately}12000 electrons which is well above the noise. This efficiency will be further increased to nearly 63%, if we use Gd with 50% enrichment in {sup 157}Gd. We can fabricate position sensitive detectors with spatial resolution of 300 {mu}m with gamma sensitivity of {approximately}1 {times} 10{sup {minus}5}. These detectors are highly radiation resistant and are good candidates for use in various application, where high efficiency, high resolution, gamma insensitive position sensitive neutron detectors are needed.

  18. Pixel detectors for diffraction-limited storage rings

    PubMed Central

    Denes, Peter; Schmitt, Bernd

    2014-01-01

    Dramatic advances in synchrotron radiation sources produce ever-brighter beams of X-rays, but those advances can only be used if there is a corresponding improvement in X-ray detectors. With the advent of storage ring sources capable of being diffraction-limited (down to a certain wavelength), advances in detector speed, dynamic range and functionality is required. While many of these improvements in detector capabilities are being pursued now, the orders-of-magnitude increases in brightness of diffraction-limited storage ring sources will require challenging non-incremental advances in detectors. This article summarizes the current state of the art, developments underway worldwide, and challenges that diffraction-limited storage ring sources present for detectors. PMID:25177989

  19. DEPFET Active Pixel Detectors for a Future Linear e(+}e({-)) Collider

    NASA Astrophysics Data System (ADS)

    Alonso, O.; Casanova, R.; Dieguez, A.; Dingfelder, J.; Hemperek, T.; Kishishita, T.; Kleinohl, T.; Koch, M.; Kruger, H.; Lemarenko, M.; Lutticke, F.; Marinas, C.; Schnell, M.; Wermes, N.; Campbell, A.; Ferber, T.; Kleinwort, C.; Niebuhr, C.; Soloviev, Y.; Steder, M.; Volkenborn, R.; Yaschenko, S.; Fischer, P.; Kreidl, C.; Peric, I.; Knopf, J.; Ritzert, M.; Curras, E.; Lopez-Virto, A.; Moya, D.; Vila, I.; Boronat, M.; Esperante, D.; Fuster, J.; Garcia, I. Garcia; Lacasta, C.; Oyanguren, A.; Ruiz, P.; Timon, G.; Vos, M.; Gessler, T.; Kuhn, W.; Lange, S.; Munchow, D.; Spruck, B.; Frey, A.; Geisler, C.; Schwenker, B.; Wilk, F.; Barvich, T.; Heck, M.; Heindl, S.; Lutz, O.; Muller, Th.; Pulvermacher, C.; Simonis, H. J.; Weiler, T.; Krausser, T.; Lipsky, O.; Rummel, S.; Schieck, J.; Schluter, T.; Ackermann, K.; Andricek, L.; Chekelian, V.; Chobanova, V.; Dalseno, J.; Kiesling, C.; Koffmane, C.; Gioi, L. Li; Moll, A.; Moser, H. G.; Muller, F.; Nedelkovska, E.; Ninkovic, J.; Petrovics, S.; Prothmann, K.; Richter, R.; Ritter, A.; Ritter, M.; Simon, F.; Vanhoefer, P.; Wassatsch, A.; Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Scheirich, J.

    2013-04-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

  20. Physics performance and upgrade for Run II of the ATLAS pixel detector

    NASA Astrophysics Data System (ADS)

    Miglioranzi, S.

    2015-05-01

    The ATLAS pixel detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle trajectories in the high radiation environment close to the collision region. The operation and performance of the pixel detector during the first years of LHC running are described. More than 96% of the detector modules were operational during this period, with an average intrinsic hit efficiency larger than 99%. The alignment of the detector was found to be stable at the few-micron level over long periods of time. Detector material description, tracking performances in Run I and expectations for the upcoming Run II are presented.

  1. Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors

    NASA Astrophysics Data System (ADS)

    Schneider, A.; Veale, M. C.; Duarte, D. D.; Bell, S. J.; Wilson, M. D.; Lipp, J. D.; Seller, P.

    2015-02-01

    In the last decade, the Detector Development Group at the Technology Department of the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and γ-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC [1]. The fabrication and bonding of such devices comprises a range of processes including material surface preparation, photolithography, stencil printing, flip-chip and wire bonding of detectors to application-specific integrated circuits (ASIC). This paper presents interconnect and bonding techniques used in the fabrication chain for pixelated detectors assembled at STFC. For this purpose, detector dies (~ 20× 20 mm2) of high quality, single crystal semiconductors, such as cadmium zinc telluride (CZT) are cut to the required thickness (up to 5mm). The die surfaces are lapped and polished to a mirror-finish and then individually processed by electroless gold deposition combined with photolithography to form 74× 74 arrays of 200 μ m × 200 μ m pixels with 250 μ m pitch. Owing to a lack of availability of CZT wafers, lithography is commonly carried out on individual detector dies which represents a significant technical challenge as the edge of the pixel array and the surrounding guard band lies close to the physical edge of the crystal. Further, such detector dies are flip-chip bonded to readout ASIC using low-temperature curing silver-loaded epoxy so that the stress between the bonded detector die and the ASIC is minimized. In addition, this reduces crystalline modifications of the detector die that occur at temperature greater than 150\\r{ }C and have adverse effects on the detector performance. To allow smaller pitch detectors to be bonded, STFC has also developed a compression cold-weld indium bump bonding technique utilising bumps formed by a photolithographic lift-off technique.

  2. Hard x-ray response of pixellated CdZnTe detectors

    SciTech Connect

    Abbene, L.; Caccia, S.; Bertuccio, G.

    2009-06-15

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm{sup 3} single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 mum BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T=10 deg.C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  3. Perspectives of the Pixel Detector Timepix for Needs of Ion Beam Therapy

    NASA Astrophysics Data System (ADS)

    Martišíková, M.; Hartmann, B.; Jäkel, O.; Granja, C.; Jakubek, J.

    2012-08-01

    Radiation therapy with ion beams is a highly precise kind of cancer treatment. In ion beam therapy the finite range of the ion beams in tissue and the increase of ionization density at the end of their path, the Bragg-peak, are exploited. Ions heavier than protons offer in addition increased biological effectiveness and decreased scattering. In this contribution we discuss the potential of a quantum counting and position sensitive semiconductor detector Timepix for its applications in ion beam therapy measurements. It provides high sensitivity and high spatial resolution (pixel pitch 55 μm). The detector, developed by the Medipix Collaboration, consists of a silicon sensor bump bonded to a pixelated readout chip (256 × 256 pixels with 55 μm pitch). An integrated USB-based readout interface together with the Pixelman software enable registering single particles online with 2D-track visualization. The experiments were performed at the Heidelberg Ion Beam Therapy Center (HIT), which is a modern ion beam therapy facility. Patient treatments are performed with proton and carbon ions, which are accelerated by a synchrotron. For dose delivery to the patient an active technique is used: narrow pencil-like beams are scanned over the target volume. The possibility to use the detector for two different applications was investigated: ion spectroscopy and beam delivery monitoring by measurement of secondary charged particles around the patient. During carbon ion therapy, a variety of ion species is created by nuclear fragmentation processes of the primary beam. Since they differ in their biological effectiveness, it is of large interest to measure the ion spectra created under different conditions and to visualize their spatial distribution. The possibility of measurements of ion energy loss in silicon makes Timepix a promising detector for ion-spectroscopic studies in patient-like phantoms. Unpredictable changes in the patient can alter the range of the ion beam in the body

  4. The Pixel Detector of the ATLAS experiment for Run 2 of the Large Hadron Collider

    NASA Astrophysics Data System (ADS)

    Oide, H.

    2014-12-01

    The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run 1 of the LHC. Taking advantage of the long shutdown, the detector was extracted from the experiment and brought to surface in order to equip it with new service quarter panels, to repair modules, and to ease installation of the Insertable B-Layer (IBL). The IBL is the fourth layer of the Run 2 Pixel Detector, and it was installed at a radius of 3.3 cm in May 2014 between the existing Pixel Detector and the new smaller-radius beam pipe. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip and two different silicon sensor technologies (planar and 3D) have been developed. Furthermore, the physics performance is expected to improve through the reduction of pixel size. As well, targeting for a low material budget, a new mechanical support using lightweight staves and a CO2 based cooling system were adopted. An overview of the IBL project as well as the experience in its construction is presented, focusing on adopted technologies, module and staves production, qualification of assembly procedure, integration of staves around the beam pipe, and commissioning of the detector.

  5. A new generation of small pixel pitch/SWaP cooled infrared detectors

    NASA Astrophysics Data System (ADS)

    Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

    2015-10-01

    Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

  6. Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging.

    PubMed

    Xie, Zhaoheng; Li, Suying; Yang, Kun; Xu, Baixuan; Ren, Qiushi

    2016-01-01

    In this paper, we propose a wobbling method to correct bad pixels in cadmium zinc telluride (CZT) detectors, using information of related images. We build up an automated device that realizes the wobbling correction for small animal Single Photon Emission Computed Tomography (SPECT) imaging. The wobbling correction method is applied to various constellations of defective pixels. The corrected images are compared with the results of conventional interpolation method, and the correction effectiveness is evaluated quantitatively using the factor of peak signal-to-noise ratio (PSNR) and structural similarity (SSIM). In summary, the proposed wobbling method, equipped with the automatic mechanical system, provides a better image quality for correcting defective pixels, which could be used for all pixelated detectors for molecular imaging. PMID:27240368

  7. Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

    NASA Technical Reports Server (NTRS)

    Gaskin, J. A.; Sharma, D. P.; Ramsey, B. D.; Six, N. Frank (Technical Monitor)

    2002-01-01

    Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

  8. Evaluation of a Wobbling Method Applied to Correcting Defective Pixels of CZT Detectors in SPECT Imaging

    PubMed Central

    Xie, Zhaoheng; Li, Suying; Yang, Kun; Xu, Baixuan; Ren, Qiushi

    2016-01-01

    In this paper, we propose a wobbling method to correct bad pixels in cadmium zinc telluride (CZT) detectors, using information of related images. We build up an automated device that realizes the wobbling correction for small animal Single Photon Emission Computed Tomography (SPECT) imaging. The wobbling correction method is applied to various constellations of defective pixels. The corrected images are compared with the results of conventional interpolation method, and the correction effectiveness is evaluated quantitatively using the factor of peak signal-to-noise ratio (PSNR) and structural similarity (SSIM). In summary, the proposed wobbling method, equipped with the automatic mechanical system, provides a better image quality for correcting defective pixels, which could be used for all pixelated detectors for molecular imaging. PMID:27240368

  9. NIRSpec detectors: noise properties and the effect of signal dependent inter-pixel crosstalk

    NASA Astrophysics Data System (ADS)

    Giardino, Giovanna; Sirianni, Marco; Birkmann, Stephan M.; Rauscher, Bernard J.; Lindler, Don; Boeker, Torsten; Ferruit, Pierre; De Marchi, Guido; Stuhlinger, Martin; Jensen, Peter; Strada, Paolo

    2012-07-01

    NIRSpec (Near Infrared Spectrograph) is one of the four science instruments of the James Webb Space Telescope (JWST) and its focal plane consists of two HAWAII-2RG sensors operating in the wavelength range 0.6-5.0μm. As part of characterizing NIRSpec, we studied the noise properties of these detectors under dark and illuminated conditions. Under dark conditions, and as already known, 1/f noise in the detector system produces somewhat more noise than can be accounted for by a simple model that includes white read noise and shot noise on integrated charge. More surprisingly, at high flux, we observe significantly lower total noise levels than expected. We show this effect to be due to pixel-to-pixel correlations introduced by signal dependent inter-pixel crosstalk, with an inter-pixel coupling factor, α, that ranges from ~ 0.01 for zero signal to ~ 0.03 close to saturation.

  10. Low-cost bump-bonding processes for high energy physics pixel detectors

    NASA Astrophysics Data System (ADS)

    Caselle, M.; Blank, T.; Colombo, F.; Dierlamm, A.; Husemann, U.; Kudella, S.; Weber, M.

    2016-01-01

    In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The short setup time for the bumping process makes gold-stud bump-bonding highly attractive (and affordable) for the flip-chipping of single prototype ICs, which is the main limitation of the current photolithography processes.

  11. Imaging detector development for nuclear astrophysics using pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Álvarez, J. M.; Gálvez, J. L.; Hernanz, M.; Isern, J.; Llopis, M.; Lozano, M.; Pellegrini, G.; Chmeissani, M.

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a γ-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a γ-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11×11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident γ-ray photon. First measurements of a 133Ba and 241Am source are reported here.

  12. Novel module production methods for the CMS pixel detector, upgrade phase I

    NASA Astrophysics Data System (ADS)

    Blank, T.; Caselle, M.; Weber, M.; Kudella, S.; Colombo, F.; Hansen, K.; Arab, S.

    2015-02-01

    For the High-Luminosity upgrade of the LHC (HL-LHC), phase I, the CMS pixel detector needs to be replaced. In order to improve the tracking resolution even at high luminosity the pixel detector is upgraded by a fourth barrel layer. This paper describes the production process and results for the fourth barrel layer for the CMS silicon pixel detector, upgrade phase I. The additional barrel layer will be produced by KIT and DESY. Both research centers have commonly developed and investigated new production processes, including SAC solder bump jetting, gold stud bumping and "Precoat by Powder Processes" (PPS) to bump the sensor tiles and prepare them for the flip-chip process. First bare modules have been produced with the new digital ROC.

  13. Gas pixel detectors for high-sensitivity x-ray polarimetry

    NASA Astrophysics Data System (ADS)

    Bellazzini, R.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Minuti, M.; Razzano, M.; Sgro, C.; Spandre, G.; Costa, E.; Soffitta, P.

    2006-06-01

    We discuss a new class of Micro Pattern Gas Detectors, the Gas Pixel Detector (GPD), in which a complete integration between the gas amplification structure and the read-out electronics has been reached. An Application-Specific Integrated Circuit (ASIC) built in deep sub-micron technology has been developed to realize a monolithic device that is, at the same time, the pixelized charge collecting electrode and the amplifying, shaping and charge measuring front-end electronics. The CMOS chip has the top metal layer patterned in a matrix of 80 μm pitch hexagonal pixels, each of them directly connected to the underneath electronics chain which has been realized in the remaining five layers of the 0.35 μm VLSI technology. Results from tests of a first prototype of such detector with 2k pixels and a full scale version with 22k pixels are presented. The application of this device for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation is shown. Results from a full MonteCarlo simulation for two astronomical sources, the Crab Nebula and the Hercules X1, are also reported.

  14. A 2D smart pixel detector for time-resolved protein crystallography

    SciTech Connect

    Beuville, E.; Cork, C.; Earnest, T.

    1995-10-01

    A smart pixel detector is being developed for Time Resolved Crystallography for biological and material science applications. Using the Pixel detector presented here, the Laue method will enable the study of the evolution of structural changes that occur within the protein as a function of time. The x-ray pixellated detector is assembled to the integrated circuit through a bump bonding process. Within a pixel size of 150 x 150 {mu}m{sup 2}, a low noise preamplifier-shaper, a discriminator, a 3 bit counter and the readout logic are integrated. The readout, based on the Column Architecture principle, will accept hit rates above 5x10{sup 8}/cm{sup 2}/s with a maximum hit rate per pixel of 1 MHz. This detector will allow time resolved Laue crystallography to be performed in a frameless operation mode, without dead time. Target specifications, architecture, and preliminary results on the 8 x 8 front-end prototype and column readout are presented.

  15. A history of hybrid pixel detectors, from high energy physics to medical imaging

    NASA Astrophysics Data System (ADS)

    Delpierre, P.

    2014-05-01

    The aim of this paper is to describe the development of hybrid pixel detectors from the origin to the application on medical imaging. We are going to recall the need for fast 2D detectors in the high energy physics experiments and to follow the different pixel electronic circuits created to satisfy this demand. The adaptation of these circuits for X-rays will be presented as well as their industrialization. Today, a number of applications are open for these cameras, particularly for biomedical imaging applications. Some developments for clinical CT will also be shown.

  16. Advanced Solid State Pixel Detectors for Future High Energy X-ray Missions

    NASA Astrophysics Data System (ADS)

    Harrison, Fiona

    We propose to advance the state of the art in solid state high energy X-ray pixel detectors for astrophysics. This program builds on advanced readout technology developed for suborbital and the NuSTAR space mission, and combines newly-developed CdTe PIN sensors and materials characterization techniques to achieve detectors broad band (1 - 200 keV), sub-keV energy resolution, and 300 micron spatial resolution. The low-noise readout technology will also be taken to the next generation with reduced pixel size, lower noise and significantly reduced dead time.

  17. Test results on the silicon pixel detector for the TTF-FEL beam trajectory monitor

    NASA Astrophysics Data System (ADS)

    Hillert, S.; Ischebeck, R.; Müller, U. C.; Roth, S.; Hansen, K.; Holl, P.; Karstensen, S.; Kemmer, J.; Klanner, R.; Lechner, P.; Leenen, M.; Ng, J. S. T.; Schmüser, P.; Strüder, L.

    2001-02-01

    Test measurements on the silicon pixel detector for the beam trajectory monitor at the free-electron laser of the TESLA test facility are presented. To determine the electronic noise of the detector and the read-out electronics and to calibrate the signal amplitude of different pixels, the 6 keV photons of the manganese K α/K β line are used. Two different methods determine the spatial accuracy of the detector: in one setup a laser beam is focused to a straight line and moves across the pixel structure. In the other, the detector is scanned using a low-intensity electron beam of an electron microscope. Both methods show that the symmetry axis of the detector defines a straight line within 0.4 μm. The sensitivity of the detector to low-energy X-rays is measured using a vacuum ultraviolet beam at the synchrotron light source HASYLAB. Additionally, the electron microscope is used to study the radiation hardness of the detector.

  18. X-ray imaging using a 320 x 240 hybrid GaAs pixel detector

    SciTech Connect

    Irsigler, R.; Andersson, J.; Alverbro, J.

    1999-06-01

    The authors present room temperature measurements on 200 {micro}m thick GaAs pixel detectors, which were hybridized to silicon readout circuits. The whole detector array contains 320 x 240 square shaped pixel with a pitch of 38 {micro}m and is based on semi-insulating liquid-encapsulated Czochralski (LEC) GaAs material. After fabricating and dicing, the detector chips were indium bump flip chip bonded to CMOS readout circuits based on charge integration and finally evaluated. This readout chip was originally designed for the readout of flip chip bonded infrared detectors, but appears to be suitable for X-ray applications as well. A bias voltage between 50 V and 100 V was sufficient to operate the detector at room temperature. The detector array did respond to x-ray radiation by an increase in current due to production of electron hole pairs by the ionization processes. Images of various objects and slit patterns were acquired by using a standard X-ray source for dental imaging. The new X-ray hybrid detector was analyzed with respect to its imaging properties. Due to the high absorption coefficient for X-rays in GaAs and the small pixel size, the sensor shows a high modulation transfer function up to the Nyquist frequency.

  19. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  20. Energy calibration of energy-resolved photon-counting pixel detectors using laboratory polychromatic x-ray beams

    NASA Astrophysics Data System (ADS)

    Youn, Hanbean; Han, Jong Chul; Kam, Soohwa; Yun, Seungman; Kim, Ho Kyung

    2014-10-01

    Recently, photon-counting detectors capable of resolving incident x-ray photon energies have been considered for use in spectral x-ray imaging applications. For reliable use of energy-resolved photon-counting detectors (ERPCDs), energy calibration is an essential procedure prior to their use because variations in responses from each pixel of the ERPCD for incident photons, even at the same energy, are inevitable. Energy calibration can be performed using a variety of methods. In all of these methods, the photon spectra with well-defined peak energies are recorded. Every pixel should be calibrated on its own. In this study, we suggest the use of a conventional polychromatic x-ray source (that is typically used in laboratories) for energy calibration. The energy calibration procedure mainly includes the determination of the peak energies in the spectra, flood-field irradiation, determination of peak channels, and determination of calibration curves (i.e., the slopes and intercepts of linear polynomials). We applied a calibration algorithm to a CdTe ERPCD comprised of 128×128 pixels with a pitch of 0.35 mm using highly attenuated polychromatic x-ray beams to reduce the pulse pile-up effect, and to obtain a narrow-shaped spectrum due to beam hardening. The averaged relative error in calibration curves obtained from 16,384 pixels was about 0.56% for 59.6 keV photons from an Americium radioisotope. This pixel-by-pixel energy calibration enhanced the signal- and contrast-to-noise ratios in images, respectively, by a factor of ~5 and 3 due to improvement in image homogeneity, compared to those obtained without energy calibration. One secondary finding of this study was that the x-ray photon spectra obtained using a common algorithm for computing x-ray spectra reasonably described the peaks in the measured spectra, which implies easier peak detection without the direct measurement of spectra using a separate spectrometer. The proposed method will be a useful alternative to

  1. Low-flux measurements with Cornell's LCLS integrating pixel array detector

    NASA Astrophysics Data System (ADS)

    Philipp, Hugh T.; Tate, Mark W.; Gruner, Sol M.

    2011-11-01

    Next generation light sources are revolutionizing x-ray science by delivering ultra-intense, hard x-ray pulses many orders of magnitude brighter and shorter in duration than previously achievable. Maximizing the scientific potential of these light sources requires the development of suitable detectors. Experiments such as coherent x-ray imaging of single particles require detectors that can record extremely high instantaneous flux rates produced by femtosecond x-ray pulses (i.e. thousands of photons incident on a single pixel of an area detector in a few femtoseconds) while also being able to accurately distinguish single photon events so that many thousands of frames of data can be used to reconstruct extremely low flux information (e.g. less than 1/1000 photons per pixel per frame). This paper presents data from an integrating pixel array detector (PAD) possessing the ability to record high- and low-flux x-ray data at an X-ray Free Electron Laser (XFEL). Methods are presented to process extremely low-flux data (less than 1/10000 8-keV x-rays per pixel per frame) to accurately recover diffraction patterns from thousands of frames. The data were collected using a detector developed by Cornell for the Linac Coherent Light Source (LCLS) at SLAC National Lab. A copy of this detector was delivered to SLAC in the middle of 2008. The ASIC developed for this detector was used by SLAC as the basis for the CS-PAD (Cornell SLAC-PAD) being used on the Coherent X-ray Imaging beamline at the LCLS. These methods extend beyond XFEL applications because they allow for the suppression of dark accumulation noise which typically limits the low-flux capability of integrating detectors on conventional x-ray sources.

  2. Test of pixel detectors for laser-driven accelerated particle beams

    NASA Astrophysics Data System (ADS)

    Reinhardt, S.; Granja, C.; Krejci, F.; Assmann, W.

    2011-12-01

    Laser-driven accelerated (LDA) particle beams have due to the unique acceleration process very special properties. In particular they are created in ultra-short bunches of high intensity exceeding more than 107 \\frac{particles}{cm^{2} \\cdot ns} per bunch. Characterization of these beams is very limited with conventional particle detectors. Non-electronic detectors such as imaging plates or nuclear track detectors are, therefore, conventionally used at present. Moreover, all these detectors give only offline information about the particle pulse position and intensity as they require minutes to hours to be processed, calling for a new highly sensitive online device. Here, we present tests of different pixel detectors for real time detection of LDA ion pulses. Experiments have been performed at the Munich 14MV Tandem accelerator with 8-20 MeV protons in dc and pulsed beam, the latter producing comparable flux as a LDA ion pulse. For detection tests we chose the position-sensitive quantum-counting semiconductor pixel detector Timepix which also provides per-pixel energy- or time-sensitivity. Additionally other types of commercially available pixel detectors are being evaluated such as the RadEye™1, a large area (25 x 50 mm2) CMOS image sensor. All of these devices are able to resolve individual ions with high spatial- and energy-resolution down to the level of μm and tens of keV, respectively. Various beam delivering parameters of the accelerator were thus evaluated and verified. The different readout modes of the Timepix detector which is operated with an integrated USB-based readout interface allow online visualization of single and time-integrated events. Therefore Timepix offers the greatest potential in analyzing the beam parameters.

  3. 3 mega-pixel InSb detector with 10μm pitch

    NASA Astrophysics Data System (ADS)

    Gershon, G.; Albo, A.; Eylon, M.; Cohen, O.; Calahorra, Z.; Brumer, M.; Nitzani, M.; Avnon, E.; Aghion, Y.; Kogan, I.; Ilan, E.; Shkedy, L.

    2013-06-01

    SCD has developed a new 1920x1536 / 10 μm digital Infrared detector for the MWIR window named Blackbird. The Blackbird detector features a Focal Plane Array (FPA) that incorporates two technological building blocks developed over the past few years. The first one is a 10 μm InSb pixel based on the matured planar technology. The second building block is an innovative 10 μm ReadOut Integrated Circuit (ROIC) pixel. The InSb and the ROIC arrays are connected using Flip-Chip technology by means of indium bumps. The digital ROIC consists a matrix of 1920x1536 pixels and has an analog to digital (A/D) converter per-channel (total of 1920x2 A/Ds). It allows for full frame readout at a high frame rate of up to 120 Hz. Such an on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The ROIC power consumption at maximum bandwidth is less than 400 mW. It features a wide range of pixel-level functionality such as several conversion gain options and a 2x2 pixel binning. The ROIC design makes use of the advanced and matured CMOS technology, 0.18 μm, which allows for high functionality and relatively low power consumption. The FPA is mounted on a Cold-Finger by a specially designed ceramic substrate. The whole assembly is housed in a stiffened Dewar that withstands harsh environmental conditions while minimizing the environment heat load contribution to the heat load of the detector. The design enables a 3-megapixel detector with overall low size, weight, and power (SWaP) with respect to comparable large format detectors. In this work we present in detail the characteristic performance of the new Blackbird detector.

  4. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    NASA Astrophysics Data System (ADS)

    Miucci, A.; Gonella, L.; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; La Rosa, A.; Muenstermann, D.; George, M.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J. C.; Liu, J.; Barbero, M.; Rozanov, A.; HV-CMOS Collaboration

    2014-05-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

  5. Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

    PubMed

    Elbakri, I A; McIntosh, B J; Rickey, D W

    2009-03-21

    We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result. PMID:19242050

  6. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    PubMed

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique. PMID:26907077

  7. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  8. A near-infrared 64-pixel superconducting nanowire single photon detector array with integrated multiplexed readout

    SciTech Connect

    Allman, M. S. Verma, V. B.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Mirin, R.; Nam, S. W.; Marsili, F.; Beyer, A.; Shaw, M. D.; Kumor, D.

    2015-05-11

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

  9. The LAMBDA photon-counting pixel detector and high-Z sensor development

    NASA Astrophysics Data System (ADS)

    Pennicard, D.; Smoljanin, S.; Struth, B.; Hirsemann, H.; Fauler, A.; Fiederle, M.; Tolbanov, O.; Zarubin, A.; Tyazhev, A.; Shelkov, G.; Graafsma, H.

    2014-12-01

    Many X-ray experiments at third-generation synchrotrons benefit from using single-photon-counting detectors, due to their high signal-to-noise ratio and potential for high-speed measurements. LAMBDA (Large Area Medipix3-Based Detector Array) is a pixel detector system based on the Medipix3 readout chip. It combines the features of Medipix3, such as a small pixel size of 55 μm and flexible functionality, with a large tileable module design consisting of 12 chips (1536 × 512 pixels) and a high-speed readout system capable of running at 2000 frames per second. To enable high-speed experiments with hard X-rays, the LAMBDA system has been combined with different high-Z sensor materials. Room-temperature systems using GaAs and CdTe systems have been produced and tested with X-ray tubes and at synchrotron beamlines. Both detector materials show nonuniformities in their raw image response, but the pixel yield is high and the uniformity can be improved by flat-field correction, particularly in the case of GaAs. High-frame-rate experiments show that useful information can be gained on millisecond timescales in synchrotron experiments with these sensors.

  10. Simultaneous real-time visible and infrared video with single-pixel detectors.

    PubMed

    Edgar, Matthew P; Gibson, Graham M; Bowman, Richard W; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J; Welsh, Stephen S; Padgett, Miles J

    2015-01-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a 'single-pixel camera' to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics. PMID:26001092

  11. 640 x 480 pixel uncooled infrared FPA with SOI diode detectors

    NASA Astrophysics Data System (ADS)

    Ueno, Masashi; Kosasayama, Yasuhiro; Sugino, Takaki; Nakaki, Yoshiyuki; Fujii, Yoshio; Inoue, Hiromoto; Kama, Keisuke; Seto, Toshiki; Takeda, Munehisa; Kimata, Masafumi

    2005-05-01

    This paper describes the structure and performance of a 25-micron pitch 640 x 480 pixel uncooled infrared focal plane array (IR FPA) with silicon-on-insulator (SOI) diode detectors. The uncooled IR FPA is a thermal type FPA that has a temperature sensor of single crystal PN junction diodes formed in an SOI layer. In the conventional pixel structure, the temperature sensor and two support legs for thermal isolation are made in the lower level of the pixel, and an IR absorbing structure is made in the upper pixel level to cover almost the entire pixel area. The IR absorption utilizes IR reflections from the lower level. Since the reflection from the support leg portions is not perfect due to the slits in the metal reflector, the reflection becomes smaller as the support leg section increases in reduced pixel pitches. In order to achieve high thermal isolation and high IR absorption simultaneously, we have developed a new pixel structure that has an independent IR reflector between the lower and upper levels. The structure assures perfect IR reflection and thus improves IR absorption. The FPA shows a noise equivalent temperature difference (NETD) of 40 mK (f/1.0) and a responsivity non-uniformity of less than 0.9%. The good uniformity is due to the high uniformity of the electrical characteristics of SOI diodes made of single crystal silicon (Si). We have confirmed that the SOI diodes architecture is suitable for large format uncooled IR FPAs.

  12. Simultaneous real-time visible and infrared video with single-pixel detectors

    NASA Astrophysics Data System (ADS)

    Edgar, Matthew. P.; Gibson, Graham M.; Bowman, Richard W.; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J.; Welsh, Stephen S.; Padgett, Miles J.

    2015-05-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a ‘single-pixel camera’ to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics.

  13. Simultaneous real-time visible and infrared video with single-pixel detectors

    PubMed Central

    Edgar, Matthew. P.; Gibson, Graham M.; Bowman, Richard W.; Sun, Baoqing; Radwell, Neal; Mitchell, Kevin J.; Welsh, Stephen S.; Padgett, Miles J.

    2015-01-01

    Conventional cameras rely upon a pixelated sensor to provide spatial resolution. An alternative approach replaces the sensor with a pixelated transmission mask encoded with a series of binary patterns. Combining knowledge of the series of patterns and the associated filtered intensities, measured by single-pixel detectors, allows an image to be deduced through data inversion. In this work we extend the concept of a ‘single-pixel camera’ to provide continuous real-time video at 10 Hz , simultaneously in the visible and short-wave infrared, using an efficient computer algorithm. We demonstrate our camera for imaging through smoke, through a tinted screen, whilst performing compressive sampling and recovering high-resolution detail by arbitrarily controlling the pixel-binning of the masks. We anticipate real-time single-pixel video cameras to have considerable importance where pixelated sensors are limited, allowing for low-cost, non-visible imaging systems in applications such as night-vision, gas sensing and medical diagnostics. PMID:26001092

  14. Uncooled infrared detector with 12μm pixel pitch video graphics array

    NASA Astrophysics Data System (ADS)

    Endoh, Tsutomu; Tohyama, Shigeru; Yamazaki, Takao; Tanaka, Yutaka; Okuyama, Kuniyuki; Kurashina, Seiji; Miyoshi, Masaru; Katoh, Kouji; Yamamoto, Takashi; Okuda, Yuuhi; Sasaki, Tokuhito; Ishizaki, Haruo; Nakajima, Tomohiko; Shinoda, Kentaro; Tsuchiya, Tetsuo

    2013-06-01

    Uncooled infrared detectors with 12μm pixel pitch video graphics array (VGA) have been developed. To improve the signal to noise ratio (SNR) for 12μm pixel pitch, a highly sensitive bolometer material, an advanced pixel structure for thermal isolation and a newly designed read-out IC (ROIC) have been also developed. The bolometer material has been improved by using vanadium niobate. Over a wide range of temperature, temperature coefficient of resistance (TCR) is achieved higher level than -3.6%/K, which is 2 times higher than that for the conventional bolometer material. For thermal isolation, thermal conductance (Gth) value for the new pixel structure, fabricated by using triple level sacrificial layer process, is estimated to be 5nW/K, which is 1/5 times lower than that for the conventional pixel structure. On the other hand, since the imaging area is reduced by the pixel pitch, the uniformity of pixel can be improved. This enables to remove the non-uniformity correction (NUC) circuit in the ROIC. Removal of this circuit is effective for low power and low noise. This 12μm pixel pitch VGA detector is packaged in a compact (24 × 24 × 6.5 mm) and lightweight (11g) ceramic package. In addition, it has been incorporated in a newly developed prototype miniature imager. The miniature imager has dimension of 25(H) ×25(W) ×28(L) mm and weight of 30g. This imager is compact and small enough to fit in your hand. Hereafter, this imager is greatly expected to be applied to mobile systems.

  15. Optimal fine ϕ-slicing for single-photon-counting pixel detectors

    PubMed Central

    Mueller, Marcus; Wang, Meitian; Schulze-Briese, Clemens

    2012-01-01

    The data-collection parameters used in a macromolecular diffraction experiment have a strong impact on data quality. A careful choice of parameters leads to better data and can make the difference between success and failure in phasing attempts, and will also result in a more accurate atomic model. The selection of parameters has to account for the application of the data in various phasing methods or high-resolution refinement. Furthermore, experimental factors such as crystal characteristics, available experiment time and the properties of the X-ray source and detector have to be considered. For many years, CCD detectors have been the prevalent type of detectors used in macromolecular crystallography. Recently, hybrid pixel X-ray detectors that operate in single-photon-counting mode have become available. These detectors have fundamentally different characteristics compared with CCD detectors and different data-collection strategies should be applied. Fine ϕ-slicing is a strategy that is particularly well suited to hybrid pixel detectors because of the fast readout time and the absence of readout noise. A large number of data sets were systematically collected from crystals of four different proteins in order to investigate the benefit of fine ϕ-­slicing on data quality with a noise-free detector. The results show that fine ϕ-slicing can substantially improve scaling statistics and anomalous signal provided that the rotation angle is comparable to half the crystal mosaicity. PMID:22194332

  16. Cat-eye effect target recognition with single-pixel detectors

    NASA Astrophysics Data System (ADS)

    Jian, Weijian; Li, Li; Zhang, Xiaoyue

    2015-12-01

    A prototype of cat-eye effect target recognition with single-pixel detectors is proposed. Based on the framework of compressive sensing, it is possible to recognize cat-eye effect targets by projecting a series of known random patterns and measuring the backscattered light with three single-pixel detectors in different locations. The prototype only requires simpler, less expensive detectors and extends well beyond the visible spectrum. The simulations are accomplished to evaluate the feasibility of the proposed prototype. We compared our results to that obtained from conventional cat-eye effect target recognition methods using area array sensor. The experimental results show that this method is feasible and superior to the conventional method in dynamic and complicated backgrounds.

  17. Test of a fine pitch SOI pixel detector with laser beam

    NASA Astrophysics Data System (ADS)

    Yi, Liu; Yunpeng, Lu; Xudong, Ju; Qun, Ou-Yang

    2016-01-01

    A silicon pixel detector with fine pitch size of 19 μm × 19 μm, developed based on SOI (silicon-on-insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics. Supported by National Natural Science Foundation of China (11375226)

  18. Analysis of full charge reconstruction algorithms for x-ray pixelated detectors

    SciTech Connect

    Baumbaugh, A.; Carini, G.; Deptuch, G.; Grybos, P.; Hoff, J.; Siddons, P., Maj.; Szczygiel, R.; Trimpl, M.; Yarema, R.; /Fermilab

    2011-11-01

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  19. Analysis of Full Charge Reconstruction Algorithms for X-Ray Pixelated Detectors

    SciTech Connect

    Baumbaugh, A.; Carini, G.; Deptuch, G.; Grybos, P.; Hoff, J.; Siddons, P., Maj.; Szczygiel, R.; Trimpl, M.; Yarema, R.; /Fermilab

    2012-05-21

    Existence of the natural diffusive spread of charge carriers on the course of their drift towards collecting electrodes in planar, segmented detectors results in a division of the original cloud of carriers between neighboring channels. This paper presents the analysis of algorithms, implementable with reasonable circuit resources, whose task is to prevent degradation of the detective quantum efficiency in highly granular, digital pixel detectors. The immediate motivation of the work is a photon science application requesting simultaneous timing spectroscopy and 2D position sensitivity. Leading edge discrimination, provided it can be freed from uncertainties associated with the charge sharing, is used for timing the events. Analyzed solutions can naturally be extended to the amplitude spectroscopy with pixel detectors.

  20. Test results of the Data Handling Processor for the DEPFET Pixel Vertex Detector

    NASA Astrophysics Data System (ADS)

    Lemarenko, M.; Hemperek, T.; Krüger, H.; Koch, M.; Lütticke, F.; Marinas, C.; Wermes, N.

    2013-01-01

    In the new Belle II detector, which is currently under construction at the SuperKEKB accelerator, a two layer pixel detector will be introduced to improve the vertex reconstruction in a ultra high luminosity environment. The pixel detector will be produced using the DEPFET technology. A new ASIC (Data Handling Processor or DHP) designed to steer the readout process, pre-process and compress the raw data has been developed. The DHP will be directly bump bonded to the balcony of the all-silicon DEPFET module. The current chip prototype has been produced in CMOS 90 nm. Its test results, including the data processing quality, the signal integrity of the gigabit transmission lines will be presented here. For the final chip, which will be produced using CMOS 65 nm, single event upset (SEU) cross sections were measured. An additional chip, containing memory blocks to be tested, was submitted and produced using this technology.

  1. Development of a 64-channel APD detector module with individual pixel readout for submillimetre spatial resolution in PET

    NASA Astrophysics Data System (ADS)

    Bérard, Philippe; Bergeron, Mélanie; Pepin, Catherine M.; Cadorette, Jules; Tétrault, Marc-André; Viscogliosi, Nicolas; Fontaine, Réjean; Dautet, Henri; Davies, Murray; Deschamps, Pierre; Lecomte, Roger

    2009-10-01

    Visualization and quantification of biological processes by molecular imaging in small animals such as rats and especially mice require the best possible spatial resolution in positron emission tomography (PET). A new avalanche photodiode (APD) detector module, the LabPET II, was developed to achieve submillimetre spatial resolution for this purpose. The module consists of two monolithic APD arrays of 4×8 pixels, each with an active area of 1.1×1.1 mm 2 at a 1.2 mm pitch. The two APD arrays mounted in a custom ceramic PGA holder are coupled to an 8×8 tapered LYSO scintillator array designed to accommodate one-to-one coupling between individual APDs and crystal pixels. To investigate the module performance, an analog test board with four 16-channel preamplifier ASICs was designed to be interfaced with the LabPET™ digital processing electronics. At a standard APD operating bias, a mean energy resolution of 27.5±2.1% was typically obtained with a relative standard deviation of 13.8% in signal amplitude for the 64 individual pixels when irradiated with 511 keV photons. With two modules in coincidence, a mean timing resolution of 5.0±0.2 ns FWHM was measured. Finally, an intrinsic spatial resolution of 0.82 mm FWHM was measured by sweeping a 22Na point source between the two detector arrays. The LabPET II detector module demonstrates promising characteristics for dedicated small animal PET imaging at submillimetre resolution and, with some further optimization, would be suitable as the building block for a dual-modality combined PET/CT system.

  2. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

    2015-01-01

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

  3. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Jaggi, A; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10(4) photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm(2) pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm(2). Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines. PMID:26724009

  4. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    SciTech Connect

    Jungmann-Smith, J. H. Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.; Cartier, S.; Medjoubi, K.

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  5. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    NASA Astrophysics Data System (ADS)

    Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  6. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors

    NASA Astrophysics Data System (ADS)

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-01

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution.

  7. Development of a Prototype for the Fluorescence Detector Array of Single-Pixel Telescopes

    NASA Astrophysics Data System (ADS)

    Fujii, T.; Malacari, M.; Bertaina, M.; Casolino, M.; Dawson, B.; Jiang, J.; Matalon, A.; Matthews, J. N.; Motloch, P.; Privitera, P.; Takizawa, Y.; Yamazaki, K.

    We present a concept for large-area, low-cost detection of ultra-high energy cosmic rays (UHECR) with a Fluorescence detector Array of Single-pixel Telescopes (FAST), addressing the requirements for the next generation of UHECR experiments. In the FAST design, a large field of view is covered by a few pixels at the focal plane of a mirror or Fresnel lens. We report preliminary results of a FAST prototype installed at the Telescope Array site, consisting of a single 200 mm photo-multiplier tube at the focal plane of a 1 m2 Fresnel lens system taken from the prototype of the JEM-EUSO experiment.

  8. Counter Architectures for a Single Photon-Counting Pixel Detector such as Medipix3

    SciTech Connect

    Wong, W.; Ballabriga, R.; Campbell, M.; Llopart, X.; Tlustos, L.

    2007-11-26

    Medipix3 is a single photon-counting pixel readout chip whose new front-end architecture aims to eliminate the spectral distortion produced by charge diffusion in highly segmented semiconductor detectors. The chip requires area and power-efficient reconfigurable digital counters and shift registers that can be integrated with other photon-processing analog and digital circuits within the 55 {mu}mx55 {mu}m pixel area. This work proposes a configurable-depth, programmable mode digital counter for use in Medipix3.

  9. Accessing photon bunching with a photon number resolving multi-pixel detector.

    PubMed

    Kalashnikov, Dmitry A; Tan, Si Hui; Chekhova, Maria V; Krivitsky, Leonid A

    2011-05-01

    In quantum optics and its applications, there is an urgent demand for photon-number resolving detectors. Recently, there appeared multi-pixel counters (MPPC) that are able to distinguish between 1,2,..10 photons. At the same time, strong coupling between different pixels (crosstalk) hinders their photon-number resolution. In this work, we suggest a method for `filtering out' the crosstalk effect in the measurement of intensity correlation functions. The developed approach can be expanded to the analysis of higher-order intensity correlations by using just a single MPPC. PMID:21643191

  10. Comparator threshold settings and the effective pixel width of the PICASSO detector

    NASA Astrophysics Data System (ADS)

    Lopez, F. C. M.; Rigon, L.; Fardin, L.; Arfelli, F.; Bergamaschi, A.; Dreossi, D.; Longo, M.; Schmitt, B.; Vallazza, E.; Longo, R.

    2014-05-01

    Charge sharing plays an important role in the performance of single-photon counting microstrip detectors, since the comparator threshold defines the effective pixel width. In this contribution, the PICASSO (Phase Imaging for Clinical Application with Silicon detector and Synchrotron radiatiOn) single-photon counting microstrip detector oriented in edge-on configuration has been used to study its spatial resolution as a function of the comparator threshold. The experiment was carried out with monochromatic x-rays at the SYRMEP beamline of the Elettra synchrotron radiation facility in Trieste (Italy). The Edge Spread Function (i.e. the integral of the Line spread Function, LSF) was measured by horizontally translating vertical slits from a bar-pattern test-object in front of the detector, at four different photon energies (19, 20, 22, and 25 keV) and for several different values of the comparator threshold. The effect of charge sharing between strips on the spatial resolution has been quantified by calculating the horizontal Modulation Transfer Function (MTF). Moreover, the composite LSF from neighboring pixels was obtained: this allowed estimating the optimal threshold for each photon energy by selecting the threshold at which the composite LSF would approach unity along the entire width of the pixel. The results show that at thresholds lower than half of the photon energy, charge sharing increases the effective pixel width, causing a drop of the MTF, and it is responsible for the appearance of peaks in the composite LSF. Conversely, at thresholds higher than half of the photon energy, the effective pixel width is reduced and the spatial resolution is increased, but the collection efficiency is compromised, as demonstrated by the presence of valleys in the composite LSF.

  11. MTF Issues in Small-Pixel-Pitch Planar Quantum IR Detectors

    NASA Astrophysics Data System (ADS)

    Gravrand, O.; Baier, N.; Ferron, A.; Rochette, F.; Berthoz, J.; Rubaldo, L.; Cluzel, R.

    2014-08-01

    The current trend in quantum infrared (IR) detector development is the design of very small-pixel-pitch large arrays. From the previous 30 μm pitch, the standard pixel pitch today is 15 μm and is expected to decrease to 12 μm in the next few years. Furthermore, focal-plane arrays (FPAs) with pixel pitch as small as 10 μm have been demonstrated. Such ultrasmall-pixel pitches are very small compared with the typical length ruling the electrical characteristics of the absorbing materials, namely the minority-carrier diffusion length. As an example, for low-doped n-type HgCdTe or InSb material, this diffusion length is on the order of 30 μm to 50 μm, i.e., three to five times the targeted pixel pitches. This has strong consequences for the modulation transfer function (MTF) of planar structures, where the lateral extension of the photodiode is limited by diffusion. For such aspect ratios, the self-confinement of neighboring diodes may not be efficient enough to maintain an optimal MTF. Therefore, this issue has to be addressed to take full advantage of the pixel pitch reduction in terms of image resolution. The aim of this work is to investigate the evolution of the MTF of HgCdTe and InSb FPAs when decreasing the pixel pitch below 15 μm. Both experimental measurements and finite-element simulations are used to discuss this issue. Different scenarios are compared, namely deep mesa etch between pixels, internal drift, surface recombination, and thin absorbing layers.

  12. Influence of electromagnetic interference on the analog part of hybrid Pixel detectors

    NASA Astrophysics Data System (ADS)

    Holik, M.; Kraus, V.; Granja, C.; Jakubek, J.; Georgiev, V.; Hromadka, M.; Skala, J.; Kubik, Z.

    2011-12-01

    The analog signal from the sensor of hybrid semiconductor pixel detectors is prone to electro-magnetic interference. The study and diagnosis of induced and common electro-magnetic coupling between the analog part and digital part of these devices is required. The influence of electro-magnetic interference was tested on the setup with a pixel detector Timepix or Medipix and a FITPix read-out interface. Measurements were carried out of external as well as internal interference. We evaluated the influence of both sources of electro-magnetic interference to the noise recorded by pixels. We measured the local spatial intensity distribution and frequency spectrum of the electro-magnetic field originating inside the readout chip during its own operation. In context of this test we exposed the detector chip to a locally generated artificial electro-magnetic field evaluating its sensitivity to induced interference. Consequently, the whole setup of the detector and read-out interface was exposed to a distant source of electro-magnetic radiation, during which we tested efficiency of the electro-magnetic shielding of various arrangements. Further, tests measured the coupling over power supply lines. In particular, the noise generated by the operation of the detector itself was determined. In addition, the detector sensitivity to deliberately induced noise was evaluated. By means of these tests weak points of the setup sensitive to the intrusion of electro-magnetic interference are revealed. When locations of susceptible places are identified proper methods can be applied to increase immunity of the detector setup against the electro-magnetic interference. Experiences gained are planned to be used in development of the EMI shielded version of the FITPIX interface shielded to electro-magnetic interference.

  13. Comparison of CCD, CMOS and Hybrid Pixel x-ray detectors: detection principle and data quality

    NASA Astrophysics Data System (ADS)

    Allé, P.; Wenger, E.; Dahaoui, S.; Schaniel, D.; Lecomte, C.

    2016-06-01

    We compare, from a crystallographic point of view, the data quality obtained using laboratory x-ray diffractometers equipped with a Molybdenum micro-source using different detector types: CCD, CMOS and XPAD hybrid pixel. First we give an overview of the working principle of these different detector types with a focus on their principal differences and their impact on the data quality. Then, using the example of an organic crystal, a comparison between the detector systems concerning the raw data statistics, the refinement agreement factors, the deformation electron density maps, and the residual density after multipolar refinement is presented. It is found that the data quality obtained with the XPAD detector is the best, even though the detection efficiency at the Mo energy (17.5 keV) is only 37% due to the Si-sensor layer thickness of 300 μm. Finally, we discuss the latest x-ray detector developments with an emphasis on the sensor material, where replacing Si by another material such as GaAs would yield detection efficiencies close to 100%, up to energies of 40 keV for hybrid pixel detectors.

  14. Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

    NASA Astrophysics Data System (ADS)

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-01

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  15. Modeling and Analysis of Hybrid Pixel Detector Deficiencies for Scientific Applications

    SciTech Connect

    Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

    2015-08-28

    Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to

  16. Firmware development and testing of the ATLAS Pixel Detector / IBL ROD card

    NASA Astrophysics Data System (ADS)

    Gabrielli, A.; Backhaus, M.; Balbi, G.; Bindi, M.; Chen, S. P.; Falchieri, D.; Flick, T.; Hauck, S.; Hsu, S. C.; Kretz, M.; Kugel, A.; Lama, L.; Travaglini, R.; Wensing, M.

    2015-03-01

    The ATLAS Experiment is reworking and upgrading systems during the current LHC shut down. In particular, the Pixel detector has inserted an additional inner layer called the Insertable B-Layer (IBL). The Readout-Driver card (ROD), the Back-of-Crate card (BOC), and the S-Link together form the essential frontend data path of the IBL's off-detector DAQ system. The strategy for IBL ROD firmware development was three-fold: keeping as much of the Pixel ROD datapath firmware logic as possible, employing a complete new scheme of steering and calibration firmware, and designing the overall system to prepare for a future unified code version integrating IBL and Pixel layers. Essential features such as data formatting, frontend-specific error handling, and calibration are added to the ROD data path. An IBL DAQ test bench using a realistic front-end chip model was created to serve as an initial framework for full offline electronic system simulation. In this document, major firmware achievements concerning the IBL ROD data path implementation, test on the test bench and ROD prototypes, will be reported. Recent Pixel collaboration efforts focus on finalizing hardware and firmware tests for the IBL. The plan is to approach a complete IBL DAQ hardware-software installation by the end of 2014.

  17. A novel approach in the free-electron laser diagnosis based on a pixelated phosphor detector.

    PubMed

    Matruglio, Alessia; Dal Zilio, Simone; Sergo, Rudi; Mincigrucci, Riccardo; Svetina, Cristian; Principi, Emiliano; Mahne, Nicola; Raimondi, Lorenzo; Turchet, Alessio; Masciovecchio, Claudio; Lazzarino, Marco; Cautero, Giuseppe; Zangrando, Marco

    2016-01-01

    A new high-performance method for the free-electron laser (FEL) focused beam diagnosis has been successfully tested at the FERMI FEL in Trieste, Italy. The novel pixelated phosphor detector (PPD) consists of micrometric pixels produced by classical UV lithography and dry etching technique, fabricated on a silicon substrate, arranged in a hexagonal geometry and filled with suitable phosphors. It has been demonstrated that the overall resolution of the system has increased by reducing the diffusion of the light in the phosphors. Various types of PPD have been produced and tested, demonstrating a high resolution in the beam profile and the ability to measure the actual spot size shot-to-shot with an unprecedented resolution. For these reasons, the proposed detector could become a reference technique in the FEL diagnosis field. PMID:26698042

  18. FITPix data preprocessing pipeline for the Timepix single particle pixel detector

    NASA Astrophysics Data System (ADS)

    Kraus, V.; Holik, M.; Jakubek, J.; Georgiev, V.

    2012-04-01

    The semiconductor pixel detector Timepix contains an array of 256 × 256 square pixels with a pitch of 55 μm. The single quantum counting detector Timepix can also provide information about the energy or arrival time of a particle from every single pixel. This device is a powerful tool for radiation imaging and ionizing particle tracking. The Timepix device can be read-out via a serial or parallel interface enabling speeds of 100 fps or 3200 fps, respectively. The device can be connected to a PC via the USB 2.0 based interface FITPix, which currently supports the serial output of Timepix reaching a speed of 90 fps. FITPix supports adjustable clock frequency and hardware triggering which is a useful tool for the synchronized operation of multiple devices. The FITPix interface can handle up to 16 detectors in daisy chain. The complete system including the FITPix interface and Timepix detector is controlled from the PC by the Pixelman software package. A pipeline structure is now implemented in the new version of the readout interface of FITPix. This version also supports parallel Timepix readout. The pipeline architecture brings the possibility of data preprocessing directly in the hardware. The first pipeline stage converts the raw Timepix data into the form of a matrix or stream of pixel values. Another stage performs further data processing such as event thresholding and data compression. Complex data processing currently performed by Pixelman in the PC is significantly reduced in this way. The described architecture together with the parallel readout increases data throughput reaching a higher frame-rate and reducing the dead time. Significant data compression is performed directly in the hardware especially for sparse data sets from particle tracking applications. The data frame size is typically compressed by factor of 10-100.

  19. Review of hybrid pixel detector readout ASICs for spectroscopic X-ray imaging

    NASA Astrophysics Data System (ADS)

    Ballabriga, R.; Alozy, J.; Campbell, M.; Frojdh, E.; Heijne, E. H. M.; Koenig, T.; Llopart, X.; Marchal, J.; Pennicard, D.; Poikela, T.; Tlustos, L.; Valerio, P.; Wong, W.; Zuber, M.

    2016-01-01

    Semiconductor detector readout chips with pulse processing electronics have made possible spectroscopic X-ray imaging, bringing an improvement in the overall image quality and, in the case of medical imaging, a reduction in the X-ray dose delivered to the patient. In this contribution we review the state of the art in semiconductor-detector readout ASICs for spectroscopic X-ray imaging with emphasis on hybrid pixel detector technology. We discuss how some of the key challenges of the technology (such as dealing with high fluxes, maintaining spectral fidelity, power consumption density) are addressed by the various ASICs. In order to understand the fundamental limits of the technology, the physics of the interaction of radiation with the semiconductor detector and the process of signal induction in the input electrodes of the readout circuit are described. Simulations of the process of signal induction are presented that reveal the importance of making use of the small pixel effect to minimize the impact of the slow motion of holes and hole trapping in the induced signal in high-Z sensor materials. This can contribute to preserve fidelity in the measured spectrum with relatively short values of the shaper peaking time. Simulations also show, on the other hand, the distortion in the energy spectrum due to charge sharing and fluorescence photons when the pixel pitch is decreased. However, using recent measurements from the Medipix3 ASIC, we demonstrate that the spectroscopic information contained in the incoming photon beam can be recovered by the implementation in hardware of an algorithm whereby the signal from a single photon is reconstructed and allocated to the pixel with the largest deposition.

  20. Active pixels of transverse field detector based on a charge preamplifier

    NASA Astrophysics Data System (ADS)

    Langfelder, G.; Buffa, C.; Longoni, A. F.; Pelamatti, A.; Zaraga, F.

    2012-01-01

    The Transverse Field Detector (TFD), a filter-less and tunable color sensitive pixel, is based on the generation of specific electric field configurations within a depleted Silicon volume. Each field configuration determines a set of three or more spectral responses that can be used for direct color acquisition at each pixel position. In order to avoid unpredictable changes of the electric field configuration during the single image capture, a specific active pixel (AP) has been designed. In this AP the dark- and photo-generated charge is not integrated directly on the junction capacitance, but, for each color, it is integrated on the feedback capacitance of a single-transistor charge pre-amplifier. The AP further includes a bias transistor, a reset transistor and a follower. In this work the design of such a pixel is discussed and the experimental results obtained on a 2x2 matrix of these active pixels are analyzed in terms of spectral response, linearity, noise, dynamic range and repeatability.

  1. Fully 3D-Integrated Pixel Detectors for X-Rays

    SciTech Connect

    Deptuch, Grzegorz W.; Gabriella, Carini; Enquist, Paul; Grybos, Pawel; Holm, Scott; Lipton, Ronald; Maj, Piotr; Patti, Robert; Siddons, David Peter; Szczygiel, Robert; Yarema, Raymond

    2016-01-01

    The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-μm-thick silicon sensor, a two-tier 34-μm-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-μm-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-μm-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn–Pb balls placed on a 320-μm pitch, yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 μW. We successful completed the 3-D integration and have reported here. Additionally, all pixels in the matrix of 64 × 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e- rms and a conversion gain of 69.5 μV/e- with 2.6 e- rms and 2.7 μV/e- rms pixel-to-pixel variations, respectively, were measured.

  2. Development of high data readout rate pixel module and detector hybridization at Fermilab

    SciTech Connect

    Sergio Zimmermann et al.

    2001-03-20

    This paper describes the baseline design and a variation of the pixel module to handle the data rate required for the BTeV experiment at Fermilab. The present prototype has shown good electrical performance characteristics. Indium bump bonding is proven to be capable of successful fabrication at 50 micron pitch on real detectors. For solder bumps at 50 micron pitch, much better results have been obtained with the fluxless PADS processed detectors. The results are adequate for our needs and our tests have validated it as a viable technology.

  3. New Possibilities in Medical X-Ray Imaging with Photon Counting Pixel Detectors

    NASA Astrophysics Data System (ADS)

    Durst, J.; Bartl, P.; Guni, E.; Haas, W.; Ritter, A.; Takoukam Talla, P.; Weber, T.; Michel, T.; Anton, G.

    2010-04-01

    The new generation of X-ray photon counting pixel detectors like the Medipix2 and the Medipix3 opens a new field of applications in medical X-ray imaging. These detectors work with one or more energy windows, which makes energy information available in addition to the intensity. A detailled understanding of the detector response of such detectors is important. Results will be presented for Si and CdTe as sensor material. With this knowledge two methods called spectrum reconstruction and material reconstruction can be applied to energy resolved images in absorption radiography and computed tomography. Another new application is the measurement of the phase information in computed tomography in addition to the absorption information. The potential of phase contrast imaging will be discussed.

  4. Towards Implementing Multi-Pixel Photon Counters as Light Detectors for Cosmic Rays

    NASA Astrophysics Data System (ADS)

    Vasquez, Jaime; Saavedra, Arthur; Ramos, Roxana; Tavares, Pablo; Wade, Marcus; Fan, Sewan; Haag, Brooke

    2013-04-01

    There has been tremendous effort in recent years to implement multi-pixel photon counters (MPPC) in diverse areas of particle physics and positron emission tomography. The MPPC detectors possess certain favorable properties such as fast response time, high sensitivity to weak light signals, compact size, low operating voltage, and lower cost compared to photomultiplier tubes. However, constructing a working MPPC detector assembly is not a unique process; there are various working setups. In this poster, we present our particular experimental setup for a working MPPC detector assembly. In particular, we describe our efforts to implement the MPPC as a readout detector to be coupled to wavelength shifting fibers that are implanted within plastic scintillators for the measurement of cosmic rays.

  5. XNAP: a hybrid pixel detector with nanosecond resolution for time resolved synchrotron radiation studies

    NASA Astrophysics Data System (ADS)

    Fajardo, P.; Baron, A. Q. R.; Dautet, H.; Davies, M.; Fischer, P.; Göttlicher, P.; Graafsma, H.; Hervé, C.; Rüffer, R.; Thil, C.

    2013-03-01

    The XNAP collaboration is constructing a hybrid pixel X-ray detector based on a monolithic silicon avalanche photodiode (APD) sensor array aiming at applications in synchrotron radiation facilities. The 2D detector is capable of identifying which individual electron bunch produces each detected X-ray photon, even when the storage ring operates in multibunch filling modes. This instrument is intended to be used in X-ray Photon Correlation Spectroscopy and Nuclear Resonance experiments and serve as a demonstrator for various kind of time resolved diffraction and scattering applications as well as a very high count rate device. The detector is a 1 kilopixel device with 280 μm pitch that implements both counting mode up to MHz frame rates and event-by-event readout with sub-nanosecond time resolution. The paper describes the detector design and some results obtained with small 4×4 pixel prototypes that have been built and measured to make and validate the most critical choices for the final detector.

  6. Development of a readout technique for the high data rate BTeV pixel detector at Fermilab

    SciTech Connect

    Bradley K Hall et al.

    2001-11-05

    The pixel detector for the BTeV experiment at Fermilab provides digitized data from approximately 22 million silicon pixel channels. Portions of the detector are six millimeters from the beam providing a substantial hit rate and high radiation dose. The pixel detector data will be employed by the lowest level trigger system for track reconstruction every beam crossing. These requirements impose a considerable constraint on the readout scheme. This paper presents a readout technique that provides the bandwidth that is adequate for high hit rates, minimizes the number of radiation hard components, and satisfies all other design constraints.

  7. Applications of pixellated GaAs X-ray detectors in a synchrotron radiation beam

    NASA Astrophysics Data System (ADS)

    Watt, J.; Bates, R.; Campbell, M.; Mathieson, K.; Mikulec, B.; O'Shea, V.; Passmore, M.-S.; Schwarz, C.; Smith, K. M.; Whitehill, C.; XIMAGE Project

    2001-03-01

    Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and synchrotron radiation beam applications. Based on previous work in the CERN RD19 and the UK IMPACT collaborations, a photon counting GaAs pixel detector (PCD) has been used in an X-ray powder diffraction experiment. The device consists of a 200 μm thick SI-LEC GaAs detector patterned in a 64×64 array of 170 μm pitch square pixels, bump-bonded to readout electronics operating in single photon counting mode. Intensity peaks in the powder diffraction pattern of KNbO 3 have been resolved and compared with results using the standard scintillator, and a PCD predecessor (the Ω3). The PCD shows improved speed, dynamic range, 2-D information and comparable spatial resolution to the standard scintillator based systems. It also overcomes the severe dead time limitations of the Ω3 by using a shutter based acquisition mode. A brief demonstration of the possibilities of the system for dental radiography and image processing are given, showing a marked reduction in patient dose and dead time compared with film.

  8. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    NASA Astrophysics Data System (ADS)

    Esposito, M.; Anaxagoras, T.; Evans, P. M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Poludniowski, G.; Price, T.; Waltham, C.; Allinson, N. M.

    2015-06-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  9. Development of thin pixel detectors on epitaxial silicon for HEP experiments

    NASA Astrophysics Data System (ADS)

    Boscardin, Maurizio; Calvo, Daniela; Giacomini, Gabriele; Wheadon, Richard; Ronchin, Sabina; Zorzi, Nicola

    2013-08-01

    The foreseen luminosity of the new experiments in High Energy Physics will require that the innermost layer of vertex detectors will be able to sustain fluencies up to 1016 neq/cm2. Moreover, in many experiments there is a demand for the minimization of the material budget of the detectors. Therefore, thin pixel devices fabricated on n-type silicon are a natural choice to fulfill these requirements due to their rad-hard performances and low active volume. We present an R&D activity aimed at developing a new thin hybrid pixel device in the framework of PANDA experiments. The detector of this new device is a p-on-n pixel sensor realized starting from epitaxial silicon wafers and back thinned up to 50-100 μm after process completion. We present the main technological steps and some electrical characterization on the fabricated devices before and after back thinning and after bump bonding to the front-end electronics.

  10. Investigating the Inverse Square Law with the Timepix Hybrid Silicon Pixel Detector: A CERN [at] School Demonstration Experiment

    ERIC Educational Resources Information Center

    Whyntie, T.; Parker, B.

    2013-01-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN [at] school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an [superscript 241]Am radioactive source at a number of different…

  11. Application of Pixel-cell Detector Technology for Advanced Neutron Beam Monitors

    SciTech Connect

    Kopp, Daniel M.

    2011-01-11

    Application of Pixel-Cell Detector Technology for Advanced Neutron Beam Monitors Specifications of currently available neutron beam detectors limit their usefulness at intense neutron beams of large-scale national user facilities used for the advanced study of materials. A large number of neutron-scattering experiments require beam monitors to operate in an intense neutron beam flux of >10E+7 neutrons per second per square centimeter. For instance, a 4 cm x 4 cm intense beam flux of 6.25 x 10E+7 n/s/cm2 at the Spallation Neutron Source will put a flux of 1.00 x 10E+9 n/s at the beam monitor. Currently available beam monitors with a typical efficiency of 1 x 10E-4 will need to be replaced in less than two years of operation due to wire and gas degradation issues. There is also a need at some instruments for beam position information that are beyond the capabilities of currently available He-3 and BF3 neutron beam monitors. ORDELA, Inc.’s research under USDOE SBIR Grant (DE-FG02-07ER84844) studied the feasibility of using pixel-cell technology for developing a new generation of stable, long-life neutron beam monitors. The research effort has led to the development and commercialization of advanced neutron beam detectors that will directly benefit the Spallation Neutron Source and other intense neutron sources such as the High Flux Isotope Reactor. A prototypical Pixel-Cell Neutron Beam Monitor was designed and constructed during this research effort. This prototype beam monitor was exposed to an intense neutron beam at the HFIR SNS HB-2 test beam site. Initial measurements on efficiency, uniformity across the detector, and position resolution yielded excellent results. The development and test results have provided the required data to initiate the fabrication and commercialization of this next generation of neutron-detector systems. ORDELA, Inc. has (1) identified low-cost design and fabrication strategies, (2) developed and built pixel-cell detectors and

  12. ATLAS Pixel Detector ROD card from IBL towards Layers 2 and 1

    NASA Astrophysics Data System (ADS)

    Balbi, G.; Falchieri, D.; Gabrielli, A.; Lama, L.; Giangiacomi, N.; Travaglini, R.

    2016-01-01

    The incoming and future upgrades of LHC will require better performance by the data acquisition system, especially in terms of throughput due to the higher luminosity that is expected. For this reason, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector has been equipped with a fourth layer— the Insertable B-Layer or IBL—located at a radius smaller than the present three layers. To read out the new layer of pixels, with a smaller pixel size with respect to the other outer layers, a front end ASIC (FE-I4) was designed as well as a new off-detector read-out chain. The latter, accordingly to the structure of the other layers of pixels, is composed mainly of two 9U-VME read-out off-detector cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Another production of 15 ROD cards was done in Fall 2013, and commissioning was completed in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards were produced for a total initial batch of 20 boards. This paper describes some integration tests that were performed and our plan to install the new DAQ chain for the layer 2, which is the outermost, and layer 1, which is external to the B-layer. This latter is the only layer that will not be upgraded to a higher readout speed. Rather, it will be switched off in the near future as it has too many damaged sensors that were not possible to rework. To do that, slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. Thus, this contribution reports also how the adoption of the IBL ROD for ATLAS Pixel

  13. Advanced numerical modeling and hybridization techniques for third-generation infrared detector pixel arrays

    NASA Astrophysics Data System (ADS)

    Schuster, Jonathan

    Infrared (IR) detectors are well established as a vital sensor technology for military, defense and commercial applications. Due to the expense and effort required to fabricate pixel arrays, it is imperative to develop numerical simulation models to perform predictive device simulations which assess device characteristics and design considerations. Towards this end, we have developed a robust three-dimensional (3D) numerical simulation model for IR detector pixel arrays. We used the finite-difference time-domain technique to compute the optical characteristics including the reflectance and the carrier generation rate in the device. Subsequently, we employ the finite element method to solve the drift-diffusion equations to compute the electrical characteristics including the I(V) characteristics, quantum efficiency, crosstalk and modulation transfer function. We use our 3D numerical model to study a new class of detector based on the nBn-architecture. This detector is a unipolar unity-gain barrier device consisting of a narrow-gap absorber layer, a wide-gap barrier layer, and a narrow-gap collector layer. We use our model to study the underlying physics of these devices and to explain the anomalously long lateral collection lengths for photocarriers measured experimentally. Next, we investigate the crosstalk in HgCdTe photovoltaic pixel arrays employing a photon-trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. The PT region drastically reduces the crosstalk; making the use of the PT structures not only useful to obtain broadband operation, but also desirable for reducing crosstalk, especially in small pitch detector arrays. Then, the power and flexibility of the nBn architecture is coupled with a PT structure to engineer spectrally filtering detectors. Last, we developed a technique to reduce the cost of large-format, high performance HgCdTe detectors by nondestructively screen-testing detector arrays prior

  14. Monte Carlo based performance assessment of different animal PET architectures using pixellated CZT detectors

    NASA Astrophysics Data System (ADS)

    Visvikis, D.; Lefevre, T.; Lamare, F.; Kontaxakis, G.; Santos, A.; Darambara, D.

    2006-12-01

    The majority of present position emission tomography (PET) animal systems are based on the coupling of high-density scintillators and light detectors. A disadvantage of these detector configurations is the compromise between image resolution, sensitivity and energy resolution. In addition, current combined imaging devices are based on simply placing back-to-back and in axial alignment different apparatus without any significant level of software or hardware integration. The use of semiconductor CdZnTe (CZT) detectors is a promising alternative to scintillators for gamma-ray imaging systems. At the same time CZT detectors have the potential properties necessary for the construction of a truly integrated imaging device (PET/SPECT/CT). The aims of this study was to assess the performance of different small animal PET scanner architectures based on CZT pixellated detectors and compare their performance with that of state of the art existing PET animal scanners. Different scanner architectures were modelled using GATE (Geant4 Application for Tomographic Emission). Particular scanner design characteristics included an overall cylindrical scanner format of 8 and 24 cm in axial and transaxial field of view, respectively, and a temporal coincidence window of 8 ns. Different individual detector modules were investigated, considering pixel pitch down to 0.625 mm and detector thickness from 1 to 5 mm. Modified NEMA NU2-2001 protocols were used in order to simulate performance based on mouse, rat and monkey imaging conditions. These protocols allowed us to directly compare the performance of the proposed geometries with the latest generation of current small animal systems. Results attained demonstrate the potential for higher NECR with CZT based scanners in comparison to scintillator based animal systems.

  15. High-dynamic-range coherent diffractive imaging: ptychography using the mixed-mode pixel array detector

    PubMed Central

    Giewekemeyer, Klaus; Philipp, Hugh T.; Wilke, Robin N.; Aquila, Andrew; Osterhoff, Markus; Tate, Mark W.; Shanks, Katherine S.; Zozulya, Alexey V.; Salditt, Tim; Gruner, Sol M.; Mancuso, Adrian P.

    2014-01-01

    Coherent (X-ray) diffractive imaging (CDI) is an increasingly popular form of X-ray microscopy, mainly due to its potential to produce high-resolution images and the lack of an objective lens between the sample and its corresponding imaging detector. One challenge, however, is that very high dynamic range diffraction data must be collected to produce both quantitative and high-resolution images. In this work, hard X-ray ptychographic coherent diffractive imaging has been performed at the P10 beamline of the PETRA III synchrotron to demonstrate the potential of a very wide dynamic range imaging X-ray detector (the Mixed-Mode Pixel Array Detector, or MM-PAD). The detector is capable of single photon detection, detecting fluxes exceeding 1 × 108 8-keV photons pixel−1 s−1, and framing at 1 kHz. A ptychographic reconstruction was performed using a peak focal intensity on the order of 1 × 1010 photons µm−2 s−1 within an area of approximately 325 nm × 603 nm. This was done without need of a beam stop and with a very modest attenuation, while ‘still’ images of the empty beam far-field intensity were recorded without any attenuation. The treatment of the detector frames and CDI methodology for reconstruction of non-sensitive detector regions, partially also extending the active detector area, are described. PMID:25178008

  16. Soft X-Ray Spectrometer Using 100-Pixel STJ Detectors for Synchrotron Radiation

    SciTech Connect

    Shiki, Shigetomo; Zen, Nobuyuki; Ukibe, Masahiro; Ohkubo, Masataka

    2009-12-16

    Fluorescent X-ray absorption fine structure (XAFS) is an important tool for material analysis, especially for the measurement of chemical states or local structures of elements. Semiconductor detectors are usually used for separating the fluorescent of elements in question from background fluorescence. However, the semiconductor detectors cannot always discriminate K-lines of light elements and L-lines of various elements as different X-ray peaks at an energy range below about 3 keV. Superconducting tunnel junction (STJ) detectors are promising device for the soft X-ray at synchrotron radiation beam lines because of excellent energy resolution, high detection efficiency, and high counting rate. We are constructing a fluorescent X-ray spectrometer having 100-pixel array of STJs with 200 {mu}m square. The array detector is mounted on a liquid cryogen-free {sup 3}He cryostat. The sensitive area is the largest among the superconducting X-ray spectrometers operating at synchrotron beam lines. Each pixel is connected to a room temperature readout circuit that consists of a charge sensitive amplifier and a pulse height analyzer. The spectrometer will achieve a total solid angle of {approx}0.01 sr and a maximum counting rate of more than 1 M count per second. The present status of developments of our fluorescent X-ray spectrometer was reported.

  17. Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

    NASA Technical Reports Server (NTRS)

    Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.; Pospisil, S.; Turecek, D.; Kitamura, H.

    2014-01-01

    The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

  18. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors.

    PubMed

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-01

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution. PMID:23032372

  19. SMARTPIX, a photon-counting pixel detector for synchrotron applications based on Medipix3RX readout chip and active edge pixel sensors

    NASA Astrophysics Data System (ADS)

    Ponchut, C.; Collet, E.; Hervé, C.; Le Caer, T.; Cerrai, J.; Siron, L.; Dabin, Y.; Ribois, J. F.

    2015-01-01

    Photon-counting pixel detectors are now routinely used on synchrotron beamlines. Many applications benefit from their noiseless mode of operation, single-pixel point spread function and high frame rates. One of their drawbacks is a discontinuous detection area due to the space-consuming wirebonded connections of the readout chips. Moreover, charge sharing limits their efficiency and their energy discrimination capabilities. In order to overcome these issues the ESRF is developing SMARTPIX,a scalable and versatile pixel detector system with minimized dead areas and with energy resolving capabilities based on the MEDIPIX3RX readout chip. SMARTPIX exploits the through-silicon via technology implemented on MEDIPIX3RX, the active edge sensor processing developed in particular at ADVACAM, and the on-chip analog charge summing feature of MEDIPIX3RX. This article reports on system architecture, unit module structure, data acquisition electronics, target characteristics and applications.

  20. Improving detector spatial resolution using pixelated scintillators with a barrier rib structure

    NASA Astrophysics Data System (ADS)

    Liu, Langechuan; Lu, Minghui; Cao, Wanqing; Peng, Luke; Chen, Arthur

    2016-03-01

    Indirect conversion flat panel detectors (FPDs) based on amorphous silicon (a-Si) technology are widely used in digital X-ray imaging. In such FPDs a scintillator layer is used for converting X-rays into visible light photons. However, the lateral spread of these photons inside the scintillator layer reduces spatial resolution of the FPD. In this study, FPDs incorporating pixelated scintillators with a barrier rib structure were developed to limit lateral spread of light photons thereby improving spatial resolution. For the pixelated scintillator, a two-dimensional barrier rib structure was first manufactured on a substrate layer, coated with reflective materials, and filled to the rim with the scintillating material of gadolinium oxysulfide (GOS). Several scintillator samples were fabricated, with pitch size varying from 160 to 280 μm and rib height from 200 to 280 μm. The samples were directly coupled to an a-Si flat panel photodiode array with a pitch of 200 μm to convert optical photons to electronic signals. With the pixelated scintillator, the detector modulation transfer function was shown to improve significantly (by 94% at 2 cycle/mm) compared to a detector using an unstructured GOS layer. However, the prototype does show lower sensitivity due to the decrease in scintillator fill factor. The preliminary results demonstrated the feasibility of using the barrier-rib structure to improve the spatial resolution of FPDs. Such an improvement would greatly benefit nondestructive testing applications where the spatial resolution is the most important parameter. Further investigation will focus on improving the detector sensitivity and exploring its medical applications.

  1. Pixelated detectors and improved efficiency for magnetic imaging in STEM differential phase contrast.

    PubMed

    Krajnak, Matus; McGrouther, Damien; Maneuski, Dzmitry; Shea, Val O'; McVitie, Stephen

    2016-06-01

    The application of differential phase contrast imaging to the study of polycrystalline magnetic thin films and nanostructures has been hampered by the strong diffraction contrast resulting from the granular structure of the materials. In this paper we demonstrate how a pixelated detector has been used to detect the bright field disk in aberration corrected scanning transmission electron microscopy (STEM) and subsequent processing of the acquired data allows efficient enhancement of the magnetic contrast in the resulting images. Initial results from a charged coupled device (CCD) camera demonstrate the highly efficient nature of this improvement over previous methods. Further hardware development with the use of a direct radiation detector, the Medipix3, also shows the possibilities where the reduction in collection time is more than an order of magnitude compared to the CCD. We show that this allows subpixel measurement of the beam deflection due to the magnetic induction. While the detection and processing is data intensive we have demonstrated highly efficient DPC imaging whereby pixel by pixel interpretation of the induction variation is realised with great potential for nanomagnetic imaging. PMID:27085170

  2. Response of a hybrid pixel detector (MEDIPIX3) to different radiation sources for medical applications

    SciTech Connect

    Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.; Vargas, G.; Moreno Barbosa, E.; Moreno Barbosa, F.

    2014-11-07

    The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a silicon sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.

  3. Response of a hybrid pixel detector (MEDIPIX3) to different radiation sources for medical applications

    NASA Astrophysics Data System (ADS)

    Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.; Vargas, G.; Moreno Barbosa, F.; Moreno Barbosa, E.

    2014-11-01

    The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a silicon sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.

  4. Development of Superconducting-Tunnel-Junction Array Detectors with Three-Dimensional Structure Beyond 1000-Pixels

    NASA Astrophysics Data System (ADS)

    Fujii, Go; Ukibe, Masahiro; Shiki, Shigetomo; Ohkubo, Masataka

    2016-07-01

    Superconducting-tunnel-junction (STJ) array X-ray detectors have exhibited excellent characteristics for fluorescence-yield X-ray absorption fine structure (XAFS) in a soft X-ray range. For high-throughput XAFS analyses, we developed a new close-packed STJ arrangement with a space of 10 \\upmu m (use the correct space) between adjacent STJ pixels by using three-dimensional multilayer structure (3D-STJ) with the wiring layer underneath the STJ pixel layer. In this work, in order to solve a double-peak response originating from absorption events in the top and bottom electrodes, we have fabricated the 3D-STJ with an asymmetric layer structure. Single-peak response for the soft X-rays below 0.7 keV was obtained. The closed-packed 3D-STJ array detector with 100 pixels has an operation yield of 93 % and a mean energy resolution of 12.5 ± 0.7 eV in full-width at half-maximum for the C-Kα X-ray.

  5. New concept of a submillimetric pixellated Silicon detector for intracerebral application

    NASA Astrophysics Data System (ADS)

    Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

    2011-12-01

    A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

  6. Studies of the possibility to use Gas Pixel Detector as a fast trigger tracking device

    NASA Astrophysics Data System (ADS)

    Sinev, N.; Bashindzhagyan, G.; Korotkova, N.; Romaniouk, A.; Tikhomirov, V.

    2016-02-01

    Gas Pixel Detector (GPD) technology offers new possibilities, which make them very attractive for application in existing and future accelerator experiments and beyond. GPDs combine advantages of silicon and gaseous detectors. They can be produced radiation hard and with low power consumption using relatively cheap technology. Low capacitance of the individual pixel channel allows us to obtain a large signal to noise ratio. Using a time projection method for GPD readout one obtains 3D track image with precise coordinate (31 µm) and angular information (0.40°). This feature would allow us to achieve performance of one GPD layer equal to a few layers of silicon detectors. Implementation of a fast readout and data processing at the front-end level allows one to reconstruct a track segment in less than 1 μs, and to use this information for the first level trigger generation. The relevant algorithms of data acquisition and analysis are described and the results of simulations are presented in this paper.

  7. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    PubMed

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18) F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8. PMID:24932209

  8. Optimizing Pinhole and Parallel Hole Collimation for Scintimammography With Compact Pixellated Detectors

    SciTech Connect

    Mark F. Smith; Stan Majewski; Andrew G. Weisenberger

    2002-11-01

    The relative resolution and sensitivity advantages of pinhole and parallel hole collimators for planar scintimammography with compact, pixellated gamma detectors were investigated using analytic models. Collimator design was studied as follows. A desired object resolution was specified for a pixellated detector with a given crystal size and intrinsic spatial resolution and for a given object-to- collimator distance. Using analytic formulas, pinhole and parallel hole collimator parameters were calculated that satisfy this object resolution with optimal geometric sensitivity. Analyses were performed for 15 cm x 20 cm field of view detectors with crystal elements 1.0, 2.0 and 3.0 mm on a side and 140 keV incident photons. The sensitivity for a given object resolution was greater for pinhole collimation at smaller distances, as expected. The object distance at which the pinhole and parallel hole sensitivity curves cross each other is important. The crossover distances increased with larger crystal size for a constant object resolution and increased as the desired object resolution decreases for a constant crystal size. For example, for 4 mm object resolution and a pinhole collimator with focal length 13 cm, these distances were 5.5 cm, 6.5 cm and 8 cm for the 1 mm, 2 mm and 3 mm crystal detectors, respectively. The results suggest a strategy of parallel hole collimation for whole breast imaging and pinhole collimation for imaging focal uptake. This could be accomplished with a dual detector system with a different collimator type on each head or a single head system equipped with two collimators and a rapid switching mechanism.

  9. Development of an Indium bump bond process for silicon pixel detectors at PSI

    NASA Astrophysics Data System (ADS)

    Broennimann, Ch.; Glaus, F.; Gobrecht, J.; Heising, S.; Horisberger, M.; Horisberger, R.; Kästli, H. C.; Lehmann, J.; Rohe, T.; Streuli, S.

    2006-09-01

    The hybrid pixel detectors used in the high-energy physics experiments currently under construction use a vertical connection technique, the so-called bump bonding. As the pitch below 100 μm, required in these applications, cannot be fulfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflowed indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflowed afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self-alignment and obtaining high mechanical strength. For the placement of the chips a manual and an automatic machine were constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatization and is therefore much more suited for producing hundreds of modules with a well-defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) has started in early 2006.

  10. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system

    PubMed Central

    Cai, Liang; Meng, Ling-Jian

    2013-01-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X–Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2–5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper. PMID:24371365

  11. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system.

    PubMed

    Cai, Liang; Meng, Ling-Jian

    2013-02-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X-Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2-5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper. PMID:24371365

  12. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system

    NASA Astrophysics Data System (ADS)

    Cai, Liang; Meng, Ling-Jian

    2013-02-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X-Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2-5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper.

  13. Nanopillar optical antenna nBn detectors for subwavelength infrared pixels

    NASA Astrophysics Data System (ADS)

    Hung, Chung Hong; Senanayake, Pradeep; Lee, Wook-Jae; Farrell, Alan; Hsieh, Nick; Huffaker, Diana L.

    2015-06-01

    The size, weight and power (SWaP) of state of the art infrared focal plane arrays are limited by the pixel size approaching the diffraction limit. We investigate a novel detector architecture which allows improvements in detectivity by shrinking the absorber volume while maintaining high quantum efficiency and wide field of view (FOV). It has been previously shown that the Nanopillar Optical Antenna (NOA) utilizes 3D plasmonic modes to funnel light into a subwavelength nanopillar absorber. We show detailed electro-optical simulations for the NOA-nBn architecture for overcoming generation recombination current with suitable surface passivation to achieve background limited infrared performance.

  14. Assembly and test of the gas pixel detector for X-ray polarimetry

    NASA Astrophysics Data System (ADS)

    Li, H.; Feng, H.; Muleri, F.; Bellazzini, R.; Minuti, M.; Soffitta, P.; Brez, A.; Spandre, G.; Pinchera, M.; Sgró, C.; Baldini, L.; She, R.; Costa, E.

    2015-12-01

    The gas pixel detector (GPD) dedicated for photoelectric X-ray polarimetry is selected as the focal plane detector for the ESA medium-class mission concept X-ray Imaging and Polarimetry Explorer (XIPE). Here we show the design, assembly, and preliminary test results of a small GPD for the purpose of gas mixture optimization needed for the phase A study of XIPE. The detector is assembled in house at Tsinghua University following a design by the INFN-Pisa group. The improved detector design results in a good uniformity for the electric field. Filled with pure dimethyl ether (DME) at 0.8 atm, the measured energy resolution is 18% at 6 keV and inversely scales with the square root of the X-ray energy. The measured modulation factor is well consistent with that from simulation, up to ~0.6 above 6 keV. The residual modulation is found to be 0.30 ± 0.15 % at 6 keV for the whole sensitive area, which can be translated into a systematic error of less than 1% for polarization measurement at a confidence level of 99%. The position resolution of the detector is about 80 μm in FWHM, consistent with previous studies and sufficient for XIPE requirements.

  15. Development of a Cost-Effective Modular Pixelated NaI(Tl) Detector for Clinical SPECT Applications

    PubMed Central

    Rozler, Mike; Liang, Haoning; Chang, Wei

    2013-01-01

    A new pixelated detector for high-resolution clinical SPECT applications was designed and tested. The modular detector is based on a scintillator block comprised of 2.75×2.75×10 mm3 NaI(Tl) pixels and decoded by an array of 51 mm diameter single-anode PMTs. Several configurations, utilizing two types of PMTs, were evaluated using a collimated beam source to measure positioning accuracy directly. Good pixel separation was observed, with correct pixel identification ranging from 60 to 72% averaged over the entire area of the modules, depending on the PMT type and configuration. This translates to a significant improvement in positioning accuracy compared to continuous slab detectors of the same thickness, along with effective reduction of “dead” space at the edges. The observed 10% average energy resolution compares well to continuous slab detectors. The combined performance demonstrates the suitability of pixelated detectors decoded with a relatively small number of medium-sized PMTs as a cost-effective approach for high resolution clinical SPECT applications, in particular those involving curved detector geometries. PMID:24146436

  16. Deployment of the CMS Tracker AMC as backend for the CMS pixel detector

    NASA Astrophysics Data System (ADS)

    Auzinger, G.

    2016-01-01

    The silicon pixel detector of the CMS experiment at CERN will be replaced with an upgraded version at the beginning of 2017 with the new detector featuring an additional barrel- and end-cap layer resulting in an increased number of fully digital read-out links running at 400 Mbps. New versions of the PSI46 Read-Out Chip and Token Bit Manager have been developed to operate at higher rates and reduce data loss. Front-End Controller and Front-End Driver boards, based on the μTCA compatible CMS Tracker AMC, a variant of the FC7 card, are being developed using different mezzanines to host the optical links for the digital read-out and control system. An overview of the system architecture is presented, with details on the implementation, and first results obtained from test systems.

  17. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    DOE PAGESBeta

    Apresyan, A.; Los, S.; Pena, C.; Presutti, F.; Ronzhin, A.; Spiropulu, M.; Xie, S.

    2016-05-07

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. As a result, a method for measuring themore » arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.« less

  18. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    NASA Astrophysics Data System (ADS)

    Apresyan, A.; Los, S.; Pena, C.; Presutti, F.; Ronzhin, A.; Spiropulu, M.; Xie, S.

    2016-08-01

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. A method for measuring the arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.

  19. Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology

    NASA Astrophysics Data System (ADS)

    Kishishita, T.; Hemperek, T.; Rymaszewski, P.; Hirono, T.; Krüger, H.; Wermes, N.

    2016-07-01

    We present the recent development of DMAPS (Depleted Monolithic Active Pixel Sensor), implemented with a Toshiba 130 nm CMOS process. Unlike in the case of standard MAPS technologies which are based on an epi-layer, this process provides a high-resistive substrate that enables larger signal and faster charge collection by drift in a 50 - 300 μm thick depleted layer. Since this process also enables the use of deep n-wells to isolate the collection electrodes from the thin active device layer, NMOS and PMOS transistors are available for the readout electronics in each pixel cell. In order to characterize the technology, we implemented a simple three transistor readout with a variety of pixel pitches and input FET sizes. This layout variety gives us a clue on sensor characteristics for future optimization, such as the input detector capacitance or leakage current. In the initial measurement, the radiation spectra were obtained from 55Fe with an energy resolution of 770 eV (FWHM) and 90Sr with the MVP of 4165 e-.

  20. Coded aperture imaging with a HURA coded aperture and a discrete pixel detector

    NASA Astrophysics Data System (ADS)

    Byard, Kevin

    An investigation into the gamma ray imaging properties of a hexagonal uniformly redundant array (HURA) coded aperture and a detector consisting of discrete pixels constituted the major research effort. Such a system offers distinct advantages for the development of advanced gamma ray astronomical telescopes in terms of the provision of high quality sky images in conjunction with an imager plane which has the capacity to reject background noise efficiently. Much of the research was performed as part of the European Space Agency (ESA) sponsored study into a prospective space astronomy mission, GRASP. The effort involved both computer simulations and a series of laboratory test images. A detailed analysis of the system point spread function (SPSF) of imaging planes which incorporate discrete pixel arrays is presented and the imaging quality quantified in terms of the signal to noise ratio (SNR). Computer simulations of weak point sources in the presence of detector background noise were also investigated. Theories developed during the study were evaluated by a series of experimental measurements with a Co-57 gamma ray point source, an Anger camera detector, and a rotating HURA mask. These tests were complemented by computer simulations designed to reproduce, as close as possible, the experimental conditions. The 60 degree antisymmetry property of HURA's was also employed to remove noise due to detector systematic effects present in the experimental images, and rendered a more realistic comparison of the laboratory tests with the computer simulations. Plateau removal and weighted deconvolution techniques were also investigated as methods for the reduction of the coding error noise associated with the gamma ray images.

  1. SemiSPECT: A Small-animal Imaging System Based on Eight CdZnTe Pixel Detectors

    PubMed Central

    Peterson, Todd E.; Kim, Hyunki; Crawford, Michael J.; Gershman, Benjamin M.; Hunter, William C.J.; Barber, H. Bradford; Furenlid, Lars R.; Wilson, Donald W.; Woolfenden, James M.; Barrett, Harrison H.

    2015-01-01

    We have constructed a SPECT system for small animals that utilizes eight CdZnTe pixel detectors. The eight detectors are arranged in a single octagonal ring, where each views the object to be imaged through a single pinhole. Additional projections are obtained via rotation of the animal. Each CdZnTe detector is approximately 2 mm in thickness and is patterned on one surface into a 64×64 array of pixels with 380 micron pitch. We have designed an electronic readout system capable of collecting data from the eight detectors in listmode. In this scheme each event entry for a gamma-ray hit includes the pulse height of the pixel with the largest signal and the pulse height for each of its eight nearest neighbors. We present details of the overall design, the electronics, and system performance. PMID:26568674

  2. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    NASA Astrophysics Data System (ADS)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  3. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    NASA Astrophysics Data System (ADS)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  4. Design Studies of a CZT-based Detector Combined with a Pixel-Geometry-Matching Collimator for SPECT Imaging.

    PubMed

    Weng, Fenghua; Bagchi, Srijeeta; Huang, Qiu; Seo, Youngho

    2013-10-01

    Single Photon Emission Computed Tomography (SPECT) suffers limited efficiency due to the need for collimators. Collimator properties largely decide the data statistics and image quality. Various materials and configurations of collimators have been investigated in many years. The main thrust of our study is to evaluate the design of pixel-geometry-matching collimators to investigate their potential performances using Geant4 Monte Carlo simulations. Here, a pixel-geometry-matching collimator is defined as a collimator which is divided into the same number of pixels as the detector's and the center of each pixel in the collimator is a one-to-one correspondence to that in the detector. The detector is made of Cadmium Zinc Telluride (CZT), which is one of the most promising materials for applications to detect hard X-rays and γ-rays due to its ability to obtain good energy resolution and high light output at room temperature. For our current project, we have designed a large-area, CZT-based gamma camera (20.192 cm×20.192 cm) with a small pixel pitch (1.60 mm). The detector is pixelated and hence the intrinsic resolution can be as small as the size of the pixel. Materials of collimator, collimator hole geometry, detection efficiency, and spatial resolution of the CZT detector combined with the pixel-matching collimator were calculated and analyzed under different conditions. From the simulation studies, we found that such a camera using rectangular holes has promising imaging characteristics in terms of spatial resolution, detection efficiency, and energy resolution. PMID:25378898

  5. The RD50 activity in the context of future pixel detector systems

    NASA Astrophysics Data System (ADS)

    Casse, G.

    2015-05-01

    The CERN/RD50 collaboration is dedicated to the radiation hardening of semiconductor sensors for future super-collider needs. The findings of this collaboration are therefore especially relevant to the pixel devices for the LHC experiment upgrades. A considerable amount of results on the enhancement of the radiation tolerance of silicon sensors has been found within RD50. The research towards radiation hardening has highlighted, and increased the knowledge on properties of sensors that are relevant to other applications. For example radiation hardening relies on the speed of signal collection in irradiated devices. As a consequence, the methods envisaged for increasing this collection speed turn out to be promising for significantly improving the performance of time resolved, high spatial resolution systems. A new type of device processing strongly emerging for production of future pixel sensor systems is the HV-CMOS technology. The RD50 research methodology provides the tools for characterising the behaviour of the deep collecting electrode (deep n-well) for this type of device after irradiation and the optimal framework for comparing the performance of the new devices with the current state of the art.

  6. Front-end intelligence for triggering and local track measurement in gaseous pixel detectors

    NASA Astrophysics Data System (ADS)

    Gromov, V.; Hessey, N.; Vermeulen, J.

    2012-11-01

    A number of applications in high-energy physics and medicine requires three-dimensional reconstruction of the particle trajectories: for example, high momentum particles in accelerator-based experiments can be identified on the basis of the properties of their tracks, while in proton computed tomography accurate knowledge of the incoming and outgoing beam trajectory is crucial in reconstructing the most probable path of the proton traversing the patient. In this work we investigate the potential of Gaseous Pixel (GridPix) detectors for fast and efficient recognition of tracks and determination of their properties. This includes selection, without external trigger, of tracks with desired angles, for example tracks with small tilt angles corresponding to high momentum particles in a magnetic field. Being able to select these fast and without external input is of interest for the future upgrades of the LHC detectors. In this paper we present a track selection algorithm, and its physical implementation in 130 nm CMOS technology with estimates of power consumption, data rates, latency, and chip area. The Timepix3 chip, currently being designed for a wide range of applications, will also be suitable for readout of GridPix detectors. Both arrival time information (accuracy 1.6 ns) and charge deposit information will be delivered for each hit together with the coordinates of the active pixel. A short overview is presented of its architecture, which allows continuous self-triggered readout of sparsely distributed data with a rate up to 20 × 106 hits cm-2sec-1. The addition of fast track pattern recognition logic to TimePix3 in a successor chip is currently being investigated.

  7. Design Studies of a CZT-based Detector Combined with a Pixel-Geometry-Matching Collimator for SPECT Imaging

    PubMed Central

    Weng, Fenghua; Bagchi, Srijeeta; Huang, Qiu; Seo, Youngho

    2014-01-01

    Single Photon Emission Computed Tomography (SPECT) suffers limited efficiency due to the need for collimators. Collimator properties largely decide the data statistics and image quality. Various materials and configurations of collimators have been investigated in many years. The main thrust of our study is to evaluate the design of pixel-geometry-matching collimators to investigate their potential performances using Geant4 Monte Carlo simulations. Here, a pixel-geometry-matching collimator is defined as a collimator which is divided into the same number of pixels as the detector’s and the center of each pixel in the collimator is a one-to-one correspondence to that in the detector. The detector is made of Cadmium Zinc Telluride (CZT), which is one of the most promising materials for applications to detect hard X-rays and γ-rays due to its ability to obtain good energy resolution and high light output at room temperature. For our current project, we have designed a large-area, CZT-based gamma camera (20.192 cm×20.192 cm) with a small pixel pitch (1.60 mm). The detector is pixelated and hence the intrinsic resolution can be as small as the size of the pixel. Materials of collimator, collimator hole geometry, detection efficiency, and spatial resolution of the CZT detector combined with the pixel-matching collimator were calculated and analyzed under different conditions. From the simulation studies, we found that such a camera using rectangular holes has promising imaging characteristics in terms of spatial resolution, detection efficiency, and energy resolution. PMID:25378898

  8. Ongoing studies for the control system of a serially powered ATLAS pixel detector at the HL-LHC

    NASA Astrophysics Data System (ADS)

    Kersten, S.; Püllen, L.; Zeitnitz, C.

    2016-02-01

    In terms of the phase-2 upgrade of the ATLAS detector, the entire inner tracker (ITk) of ATLAS will be replaced. This includes the pixel detector and the corresponding detector control system (DCS). The current baseline is a serial powering scheme of the detector modules. Therefore a new detector control system is being developed with emphasis on the supervision of serially powered modules. Previous chips had been designed to test the radiation hardness of the technology and the implementation of the modified I2C as well as the implementation of the logic of the CAN protocol. This included tests with triple redundant registers. The described chip is focusing on the implementation in a serial powering scheme. It was designed for laboratory tests, aiming for the proof of principle. The concept of the DCS for ATLAS pixel after the phase-2 upgrade is presented as well as the status of development including tests with the prototype ASIC.

  9. CZT pixel detectors equipped with effective Ohmic contacts; their spectroscopic performance and the enigma of why they thus behave

    NASA Astrophysics Data System (ADS)

    El-Hanany, Uri; Shahar, Allon; Tsigelman, A.

    1999-10-01

    The performance of CZT pixel detectors, with dedicated ICs and electronic processors, have been demonstrated. These nuclear imaging modules, developed primarily for the medical market, may be utilized for other applications, such as large area nuclear spectrometers. An improved crystal growth technique ensures a practical supply of wafers of which high performance detectors are fabricated. We believe that the high spectroscopic quality of these detectors stems from their effective Ohmic behavior, coupled with the geometrical, 'small pixel' effect. The Ohmic operation of these detectors has been described in a schematic way only, where the detailed non-equilibrium mechanism, responsible for it, still remains to be explained in detail. The IMARAD detector type 2, with contacts which strongly limit the dark current, exhibit even improved spectroscopic behavior, due to a dynamic Ohmic behavior of these contacts.

  10. Detailed Studies of Pixelated CZT Detectors Grown with the Modified Horizontal Bridgman Method

    NASA Technical Reports Server (NTRS)

    Jung, I.; Krawczynski, H.; Burger, A.; Guo, M.; Groza, M.

    2007-01-01

    The detector material Cadmium Zinc Telluride (CZT) achieves excellent spatial resolution and good energy resolution over a broad energy range, several keV up to some MeV. Presently, there are two main methods to grow CZT crystals, the Modified High-Pressure Bridgman (MHB) and the High-Pressure Bridgman (HPB) process. The study presented in this paper is based on MHB CZT substrates from the company Orbotech Medical Solutions Ltd. [Orbotech Medical Solutions Ltd., 10 Plaut St., Park Rabin, P.O. Box 2489, Rehovot, Israel, 76124]. Former studies have shown that high-work-function materials on the cathode side reduce the leakage current and, therefore, improve the energy resolution at lower energies. None of the studies have emphasized on the anode contact material. Therefore, we present in this paper the result of a detailed study in which for the first time the cathode material was kept constant and the anode material was varied. We used four different anode materials: Indium, Titanium, Chromium and Gold, metals with work-functions between 4.1 eV and 5.1 eV. The detector size was 2.0 x 2.0 x 0.5 cu cm with 8 x 8 pixels and a pitch of 2.46 mm. The best performance was achieved with the low-work-function materials Indium and Titanium with energy resolutions of 2.0 keV (at 59 keV) and 1.9 keV (at 122 keV) for Titanium and 2.1 keV (at 59 keV) and 2.9 keV (at 122 keV) for Indium. Taking into account the large pixel pitch of 2.46 mm, these resolutions are very competitive in comparison to those achieved with detectors made of material produced with the more expensive conventional HPB method. We present a detailed comparison of our detector response with 3D simulations. The latter comparisons allow us to determine the mobility-lifetime-products (mu tau-products) for electrons and holes. Finally, we evaluated the temperature dependency of the detector performance and ls-products. For many applications temperature dependence is important, therefore, we extended the scope of

  11. ASTRO-H CdTe detectors proton irradiation at PIF

    NASA Astrophysics Data System (ADS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-07-01

    ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 μm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper, we report on the test campaigns at PIF and will show up our experimental setup. We will pursue describing the irradiation conditions associated with our GEANT 4 predictions and finally, we report the main results of our campaigns concluding that the proton effect does not severely affect the CdTe response neither the detector stability while the secondary neutrons might be more active to reduce the performance on the long run.

  12. Breakdown of silicon particle detectors under proton irradiation

    SciTech Connect

    Vaeyrynen, S.; Raeisaenen, J.; Kassamakov, I.; Tuominen, E.

    2009-11-15

    Silicon particle detectors made on Czochralski and float zone silicon materials were irradiated with 7 and 9 MeV protons at a temperature of 220 K. During the irradiations, the detectors were biased up to their operating voltage. Specific values for the fluence and flux of the irradiation were found to cause a sudden breakdown in the detectors. We studied the limits of the fluence and the flux in the breakdown as well as the behavior of the detector response function under high flux irradiations. The breakdown was shown to be an edge effect. Additionally, the buildup of an oxide charge is suggested to lead to an increased localized electric field, which in turn triggers a charge carrier multiplication. Furthermore, we studied the influences of the type of silicon material and the configuration of the detector guard rings.

  13. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e−RMS at maximum gain and negative polarity conditions has been measured at room temperature. PMID:26744545

  14. Imaging of Ra-223 with a small-pixel CdTe detector

    NASA Astrophysics Data System (ADS)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  15. Improvement of the energy resolution of pixelated CdTe detectors for applications in 0νββ searches

    NASA Astrophysics Data System (ADS)

    Gleixner, T.; Anton, G.; Filipenko, M.; Seller, P.; Veale, M. C.; Wilson, M. D.; Zang, A.; Michel, T.

    2015-07-01

    Experiments trying to detect 0νββ are very challenging. Their requirements include a good energy resolution and a good detection efficiency. With current fine pixelated CdTe detectors there is a trade off between the energy resolution and the detection efficiency, which limits their performance. It will be shown with simulations that this problem can be mostly negated by analysing the cathode signal which increases the optimal sensor thickness. We will compare different types of fine pixelated CdTe detectors (Timepix, Dosepix, HEXITEC) from this point of view.

  16. Use of silicon and GaAs pixel detectors for digital autoradiography

    SciTech Connect

    Bertolucci, E.; Conti, M.; Grossi, G.

    1996-12-31

    Solid state detectors made of Si (4.8x8 mm{sup 2}) and GaAs (6.4x8 mm{sup 2}) pixel matrices bump-bonded to the Omega2 and Omega3 electronic read-out systems, developed at CERN for H.E.P. experiments, have been used to obtain autoradiographic images of clusters of human epithelial cells and DNA fragments separated via electrophoresis, both labeled with {sup 32}P. The system has shown a good minimum detectable activity per unit area of 2. 10{sup -4} cps mm{sup -2}, and has proved linear for count rate in the range 0.2-20 cps, typical of autoradiography. The pixel dimensions are 75x500 {mu}m{sup 2} (Si-Omega2) and 50x500 {mu}m{sup 2} (GaAs-Omega3), respectively. We are able to clearly localize clusters of cells which have incorporated the radioactive tracer and DNA fragments on an electrophoretic gel on paper (blots).

  17. Coherent, focus-corrected imaging of optical fiber facets using a single-pixel detector.

    PubMed

    Gordon, George S D; Feng, Feng; Kang, Qiongyue; Jung, Yongmin; Sahu, Jayanta; Wilkinson, Timothy

    2014-10-15

    A novel imaging technique that produces accurate amplitude and phase images of an optical fiber facet using only a phase-only liquid-crystal on silicon (LCOS) spatial light modulator (SLM) and a single-pixel detector is presented. The system can take images in two orthogonal polarizations and so provides a powerful tool for modal characterization of multimode fibers, which is of increasing importance due to their burgeoning use in telecommunications and medical applications. This technique first uses a simulated annealing algorithm to compute a hologram that collects light from a small region of the fiber facet. Next, the fiber facet is automatically brought into focus using adaptive aberration correction on the SLM. Finally, a common-path interferometer is created using the SLM, and the phase of the optical field at each pixel is determined. Finally, high-definition amplitude and phase images of a ring-core refractive index fiber are presented as a proof-of-principle demonstration of the technique. PMID:25361149

  18. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    NASA Astrophysics Data System (ADS)

    Zhao, C.; Konstantinidis, A. C.; Zheng, Y.; Anaxagoras, T.; Speller, R. D.; Kanicki, J.

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm-1 and a DQE of around 0.5 at spatial frequencies  <1 mm-1. In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  19. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    PubMed

    Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  <1 mm(-1). In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered. PMID:26540090

  20. Reduction of ring artifacts in CBCT: Detection and correction of pixel gain variations in flat panel detectors

    SciTech Connect

    Altunbas, Cem; Lai, Chao-Jen; Zhong, Yuncheng; Shaw, Chris C.

    2014-09-15

    Purpose: In using flat panel detectors (FPD) for cone beam computed tomography (CBCT), pixel gain variations may lead to structured nonuniformities in projections and ring artifacts in CBCT images. Such gain variations can be caused by change in detector entrance exposure levels or beam hardening, and they are not accounted by conventional flat field correction methods. In this work, the authors presented a method to identify isolated pixel clusters that exhibit gain variations and proposed a pixel gain correction (PGC) method to suppress both beam hardening and exposure level dependent gain variations. Methods: To modulate both beam spectrum and entrance exposure, flood field FPD projections were acquired using beam filters with varying thicknesses. “Ideal” pixel values were estimated by performing polynomial fits in both raw and flat field corrected projections. Residuals were calculated by taking the difference between measured and ideal pixel values to identify clustered image and FPD artifacts in flat field corrected and raw images, respectively. To correct clustered image artifacts, the ratio of ideal to measured pixel values in filtered images were utilized as pixel-specific gain correction factors, referred as PGC method, and they were tabulated as a function of pixel value in a look-up table. Results: 0.035% of detector pixels lead to clustered image artifacts in flat field corrected projections, where 80% of these pixels were traced back and linked to artifacts in the FPD. The performance of PGC method was tested in variety of imaging conditions and phantoms. The PGC method reduced clustered image artifacts and fixed pattern noise in projections, and ring artifacts in CBCT images. Conclusions: Clustered projection image artifacts that lead to ring artifacts in CBCT can be better identified with our artifact detection approach. When compared to the conventional flat field correction method, the proposed PGC method enables characterization of nonlinear

  1. Pixel detector Timepix operated in pile-up mode for pulsed imaging with ultra-soft X-rays

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Jakubek, J.; Kroupa, M.; Bruza, P.; Panek, D.

    2012-12-01

    The hybrid semiconductor pixel detector Timepix operated in the Time-over-Threshold mode (ToT) enables direct energy measurement in each pixel. The advantage of noiseless position sensitive detection combined with per pixel spectroscopic capability opens the way to numerous new applications, which were till now, however, restricted to detection of radiation which is basically above the detector energy threshold (typically 3-4 keV). This limitation excludes application of the hybrid pixel technology to highly interesting fields such as plasma diagnostics or X-ray microscopy. In this contribution we demonstrate how the Timepix detector working in ToT mode can be operated as a detector for particles which are in principle below the detector threshold, namely for soft X-ray photons with energy typically 0.5 keV. The approach is based on the detection of a larger number of photons incoming in the pixel signal processing chain in a time significantly shorter than the shaping time of the pixel electronics, i.e. forming signal pile-up. The proposed approach enables a CCD-like integrating operation with the many advantages of the hybrid counting technology (direct conversion, high sensitivity, dark-current free, room temperature operation, fully digital output and possibility to utilize various read-out architectures). Using the proposed approach we performed single-shot X-ray radiography with a laser-induced plasma source in the spectral region of water window. The same technique was used for the characterization of the source itself.

  2. Simultaneous, coincident 2-D ACAR and DBAR using segmented HPGe detectors incorporating sub-pixel interpolation

    NASA Astrophysics Data System (ADS)

    Williams, Christopher S.; Burggraf, Larry W.; Adamson, Paul E.; Petrosky, James C.; Oxley, Mark E.

    2010-04-01

    A three-dimensional Positron Annihilation Spectrometry System (3D PASS) for determination of 3D electron-positron (e--e+) momentum densities by measuring coincident annihilation photons was designed, constructed and characterized. 3D PASS collects a single data set including correlated photon energies and coincident photon positions which are typically collected separately by two-dimensional angular correlation of annihilation radiation (2D ACAR) and two-detector coincident Doppler broadening of annihilation radiation (CDBAR) spectrometry. 3D PASS is composed of two position-sensitive, high-purity germanium (HPGe) double-sided strip detectors (DSSD(s)) linked together by a 32-channel, 50 MHz digital electronics suite. The DSSDs data were analyzed to determine location of photon detection events using an interpolation method to achieve a spatial resolution less than the 5-mm width of the DSSDs' charge collection strips. The interpolation method relies on measuring a figure-of-merit proportional to the area of the transient charges observed on both strips directly adjacent to the charge collection strip detecting the full charge deposited by the annihilation photon. This sub-pixel resolution, corresponding to the error associated with event location within a sub-pixel was measured for both DSSDs using the approach outlined in Williams et al [1] and was on the order of ± 0.20 mm (± one-standard deviation). As a result of the sub-pixel resolution, the distance between the DSSDs and material sample was reduced by a factor of five compared to what is typically required in 2D ACAR systems was necessary to achieve 0.5-mrad angular resolution. This reduction in the system's footprint decreases attenuation of the annihilation photons in the air between the material sample and the DSSDs and increases the solid angle between the sample and the DSSDs, ultimately resulting in higher system detection efficiency. 3D PASS was characterized in the same manner comparable to state

  3. Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

    PubMed

    Jungmann, Julia H; Heeren, Ron M A

    2013-01-15

    Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. PMID:23239313

  4. A vertically integrated pixel readout device for the Vertex Detector at the International Linear Collider

    SciTech Connect

    Deptuch, Grzegorz; Christian, David; Hoff, James; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2008-12-01

    3D-Integrated Circuit technology enables higher densities of electronic circuitry per unit area without the use of nanoscale processes. It is advantageous for mixed mode design with precise analog circuitry because processes with conservative feature sizes typically present lower process dispersions and tolerate higher power supply voltages, resulting in larger separation of a signal from the noise floor. Heterogeneous wafers (different foundries or different process families) may be combined with some 3D integration methods, leading to the optimization of each tier in the 3D stack. Tracking and vertexing in future High-Energy Physics (HEP) experiments involves construction of detectors composed of up to a few billions of channels. Readout electronics must record the position and time of each measurement with the highest achievable precision. This paper reviews a prototype of the first 3D readout chip for HEP, designed for a vertex detector at the International Linear Collider. The prototype features 20 x 20 {micro}m{sup 2} pixels, laid out in an array of 64 x 64 elements and was fabricated in a 3-tier 0.18 {micro}m Fully Depleted SOI CMOS process at MIT-Lincoln Laboratory. The tests showed correct functional operation of the structure. The chip performs a zero-suppressed readout. Successive submissions are planned in a commercial 3D bulk 0.13 {micro}m CMOS process to overcome some of the disadvantages of an FDSOI process.

  5. Radiation-hard active CMOS pixel sensors for HL-LHC detector upgrades

    NASA Astrophysics Data System (ADS)

    Backhaus, Malte

    2015-02-01

    The luminosity of the Large Hadron Collider (LHC) will be increased during the Long Shutdown of 2022 and 2023 (LS3) in order to increase the sensitivity of its experiments. A completely new inner detector for the ATLAS experiment needs to be developed to withstand the extremely harsh environment of the upgraded, so-called High-Luminosity LHC (HL-LHC). High radiation hardness as well as granularity is mandatory to cope with the requirements in terms of radiation damage as well as particle occupancy. A new silicon detector concept that uses commercial high voltage and/or high resistivity full complementary metal-oxide-semiconductor (CMOS) processes as active sensor for pixel and/or strip layers has risen high attention, because it potentially provides high radiation hardness and granularity and at the same time reduced price due to the commercial processing and possibly relaxed requirements for the hybridization technique. Results on the first prototypes characterized in a variety of laboratory as well as test beam environments are presented.

  6. Study of UT glasses for pixel identification performance in multi-anode PMT-based detectors for PET

    NASA Astrophysics Data System (ADS)

    Straub, K.; Belcari, N.; Camarlinghi, N.; Ferretti, S.; Marino, N.; Rosso, V.; Sportelli, G.; Del Guerra, A.

    2013-08-01

    The pixel identification capability is a common problem of detector systems consisting of scintillating matrices coupled to photodetectors. In positron emission tomography (PET) systems, a better pixel identification leads directly to an improvement of the spatial resolution of the system. To gain pixel identification efficiency especially at the peripheral active area, ultra-transmitting (UT) glasses can be inserted between the crystal and PMT array in order to promote light spread and avoid overlap of responses due to the enhanced light spread. Measurements with three different UT glass thicknesses (d = 0.7 , 1.0 and 1.35 mm) have been performed in order to study their impact on pixel identification properties compared to direct coupling.

  7. Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging

    PubMed Central

    Muir, Ryan D.; Pogranichney, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

    2014-01-01

    Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment. PMID:25178010

  8. Photoelectric performance degradation of several laser-irradiated Si detectors

    NASA Astrophysics Data System (ADS)

    Moeglin, Jean-Pierre; Gautier, Bernard; Joeckle, Rene C.; Bolmont, Dominique

    1998-04-01

    The modifications of the basic photoelectric properties in visible Si photodiodes irradiated by laser pulses have been measured and an attempt to link them to the observed/computed dopant distribution has been performed. These detectors have been irradiated 'in band' with two types of lasers: 1) a Q-switched Nd:YAG laser, frequency doubled with a 'short' pulse duration of 4 ns and 2) dye laser R6G with a 'long' pulse of 2 microsecond(s) . The single pulse fluence range extended form 0.4 to 50 J/cm2 well above the surface melting fluence threshold. Specially manufactured detectors have been tested. These detectors have a linearly graded junction with different resistivities. The detector responsivity decrease (DRD) vs applied irradiation fluence has been measured for both irradiation types. SIMS has been used to measure the changes in the dopant profile. It has been shown that a large spreading with a 'plateau like shape' of the boron distribution is obtained, resulting from a gas phase diffusion of dopant during the vaporization/condensation cycle. A relationship between DRD and boron profile has been established for Si detectors irradiated by the dye laser. A local sensitivity drop of 70 percent inside the damaged area location has been measured. Furthermore, it has been shown that high irradiation fluences induce a sequential loss of the different photoelectric properties rather than a complete detector breakdown at a prescribed fluence threshold.

  9. GEM400: A front-end chip based on capacitor-switch array for pixel-based GEM detector

    NASA Astrophysics Data System (ADS)

    Li, H. S.; Jiang, X. S.; Liu, G.; Wang, N.; Sheng, H. Y.; Zhuang, B. A.; Zhao, J. W.

    2012-03-01

    The upgrade of Beijing Synchrotron Radiation Facility (BSRF) needs two-dimensional position-sensitive detection equipment to improve the experimental performance. Gas Electron Multiplier (GEM) detector, in particular, pixel-based GEM detector has good application prospects in the domain of synchrotron radiation. The read-out of larger scale pixel-based GEM detector is difficult for the high density of the pixels (PAD for collecting electrons). In order to reduce the number of cables, this paper presents a read-out scheme for pixel-based GEM detector, which is based on System-in-Package technology and ASIC technology. We proposed a circuit structure based on capacitor switch array circuit, and design a chip GEM400, which is a 400 channels ASIC. The proposed circuit can achieve good stability and low power dissipation. The chip is implemented in a 0.35μm CMOS process. The basic functional circuitry in ths chip includes analog switch, analog buffer, voltage amplifier, bandgap and control logic block, and the layout of this chip takes 5mm × 5mm area. The simulation results show that the chip can allow the maximum amount of input charge 70pC on the condition of 100pF external integrator capacitor. Besides, the chip has good channel uniformity (INL is better than 0.1%) and lower power dissipation.

  10. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Abbene, L.; Gerardi, G.; Principato, F.

    2015-03-01

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging.

  11. The Cryogenic AntiCoincidence detector for ATHENA: the progress towards the final pixel design

    NASA Astrophysics Data System (ADS)

    Macculi, Claudio; Piro, Luigi; Cea, Donatella; Colasanti, Luca; Lotti, Simone; Natalucci, Lorenzo; Gatti, Flavio; Bagliani, Daniela; Biasotti, Michele; Corsini, Dario; Pizzigoni, Giulio; Torrioli, Guido; Barbera, Marco; Mineo, Teresa; Perinati, Emanuele

    2014-07-01

    "The Hot and Energetic Universe" is the scientific theme approved by the ESA SPC for a Large mission to be flown in the next ESA slot (2028th) timeframe. ATHENA is a space mission proposal tailored on this scientific theme. It will be the first X-ray mission able to perform the so-called "Integral field spectroscopy", by coupling a high-resolution spectrometer, the X-ray Integral Field Unit (X-IFU), to a high performance optics so providing detailed images of its field of view (5' in diameter) with an angular resolution of 5" and fine energy-spectra (2.5eV@E<7keV). The X-IFU is a kilo-pixel array based on TES (Transition Edge Sensor) microcalorimeters providing high resolution spectroscopy in the 0.2-12 keV range. Some goals is the detection of faint and diffuse sources as Warm Hot Intergalactic Medium (WHIM) or galaxies outskirts. To reach its challenging scientific aims, it is necessary to shield efficiently the X-IFU instrument against background induced by external particles: the goal is 0.005 cts/cm^2/s/keV. This scientific requirement can be met by using an active Cryogenic AntiCoincidence (CryoAC) detector placed very close to X-IFU (~ 1 mm below). This is shown by our GEANT4 simulation of the expected background at L2 orbit. The CryoAC is a TES based detector as the X-IFU sharing with it thermal and mechanical interfaces, so increasing the Technology Readiness Level (TRL) of the payload. It is a 2x2 array of microcalorimeter detectors made by Silicon absorber (each of about 80 mm^2 and 300 μm thick) and sensed by an Ir TES. This choice shows that it is possible to operate such a detector in the so-called athermal regime which gives a response faster than the X-IFU (< 30 μs), and low energy threshold (above few keV). Our consortium has developed and tested several samples, some of these also featured by the presence of Al-fins to efficiently collect the athermal phonons, and increased x-ray absorber area (up to 1 cm^2). Here the results of deep test

  12. Fourier analysis of the imaging characteristics of a CMOS active pixel detector for mammography by using a linearization method

    NASA Astrophysics Data System (ADS)

    Han, Jong Chul; Yun, Seungman; Youn, Hanbean; Kam, Soohwa; Cho, Seungryong; Achterkirchen, Thorsten G.; Kim, Ho Kyung

    2014-09-01

    Active pixel design using the complementary metal-oxide-semiconductor (CMOS) process is a compelling solution for use in X-ray imaging detectors because of its excellent electronic noise characteristics. We have investigated the imaging performance of a CMOS active pixel photodiode array coupled to a granular phosphor through a fiber-optic faceplate for mammographic applications. The imaging performance included the modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). Because we observed a nonlinear detector response at low exposures, we used the linearization method for the analysis of the DQE. The linearization method uses the images obtained at detector input, which are converted from those obtained at detector output by using the inverse of the detector response. Compared to the conventional method, the linearization method provided almost the same MTF and a slightly lower normalized NPS. However, the difference between the DQE results obtained by using the two methods was significant. We claim that the conventional DQE analysis of a detector having a nonlinear response characteristic can yield wrong results. Under the standard mammographic imaging condition, we obtained a DQE performance that was competitive with the performances of conventional flat-panel mammography detectors. We believe that the CMOS detector investigated in this study can be successfully used for mammography.

  13. Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

    NASA Astrophysics Data System (ADS)

    Beilicke, Matthias

    Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

  14. Prototypes for components of a control system for the ATLAS pixel detector at the HL-LHC

    NASA Astrophysics Data System (ADS)

    Boek, J.; Kersten, S.; Kind, P.; Mättig, P.; Püllen, L.; Zeitnitz, C.

    2013-03-01

    In the years around 2020 an upgrade of the LHC to the HL-LHC is scheduled, which will increase the accelerators luminosity by a factor of 10. In the context of this upgrade, the inner detector of the ATLAS experiment will be replaced entirely including the pixel detector. This new pixel detector requires a specific control system which complies with the strict requirements in terms of radiation hardness, material budget and space for the electronics in the ATLAS experiment. The University of Wuppertal is developing a concept for a DCS (Detector Control System) network consisting of two kinds of ASICs. The first ASIC is the DCS Chip which is located on the pixel detector, very close to the interaction point. The second ASIC is the DCS Controller which is controlling 4x4 DCS Chips from the outer regions of ATLAS via differential data lines. Both ASICs are manufactured in 130 nm deep sub micron technology. We present results from measurements from new prototypes of components for the DCS network.

  15. High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

    NASA Astrophysics Data System (ADS)

    Perić, Ivan; Fischer, Peter; Kreidl, Christian; Hanh Nguyen, Hong; Augustin, Heiko; Berger, Niklaus; Kiehn, Moritz; Perrevoort, Ann-Kathrin; Schöning, André; Wiedner, Dirk; Feigl, Simon; Heim, Timon; Meng, Lingxin; Münstermann, Daniel; Benoit, Mathieu; Dannheim, Dominik; Bompard, Frederic; Breugnon, Patrick; Clemens, Jean-Claude; Fougeron, Denis; Liu, Jian; Pangaud, Patrick; Rozanov, Alexandre; Barbero, Marlon; Backhaus, Malte; Hügging, Fabian; Krüger, Hans; Lütticke, Florian; Mariñas, Carlos; Obermann, Theresa; Garcia-Sciveres, Maurice; Schwenker, Benjamin; Dierlamm, Alexander; La Rosa, Alessandro; Miucci, Antonio

    2013-12-01

    High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 1015 neq/cm2, nearly 100% detection efficiency and a spatial resolution of about 3 μm were demonstrated. Since 2011 the HV detectors have first applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process.

  16. Power and area efficient 4-bit column-level ADC in a CMOS pixel sensor for the ILD vertex detector

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Morel, F.; Hu-Guo, Ch; Hu, Y.

    2013-01-01

    A 48 × 64 pixels prototype CMOS pixel sensor (CPS) integrated with 4-bit column-level, self triggered ADCs for the outer layers of the ILD vertex detector (VTX) was developed and fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation. The ADCs accommodating the pixel read out in a rolling shutter mode complete the conversion by performing a multi-bit/step approximation. The design was optimised for power saving at sampling frequency. The prototype sensor is currently at the stage of being started testing and evaluation. So what is described is based on post simulation results rather than test data. This 4-bit ADC dissipates, at a 3-V supply and 6.25-MS/s sampling rate, 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. Its footprint amounts to 35 × 545 μm2.

  17. Fabrication of 721-pixel silicon lens array of a microwave kinetic inductance detector camera

    NASA Astrophysics Data System (ADS)

    Mitsui, Kenji; Nitta, Tom; Okada, Norio; Sekimoto, Yutaro; Karatsu, Kenichi; Sekiguchi, Shigeyuki; Sekine, Masakazu; Noguchi, Takashi

    2015-04-01

    We have been developed a lens-integrated superconducting camera for millimeter and submillimeter astronomy. High-purity silicon (Si) is suitable for the lens array of the microwave kinetic inductance detector camera due to its high refractive index and low dielectric loss at low temperatures. The camera is an antenna-coupled Al coplanar waveguide on a Si substrate. Thus the lens and the device are made of the same material. We report a fabrication method of a 721-pixel Si lens array with an antireflection (AR) coating. The Si lens array was fabricated with an ultraprecision cutting machine. It uses TiAlN-coated carbide end mills attached with a high-speed spindle. The shape accuracy was less than 50 μm peak-to-valley and the surface roughness was arithmetic average roughness (Ra) of 1.8 μm. The mixed epoxy was used as an AR coating to adjust the refractive index. It was shaved to yield a thickness of 185 μm for 220 GHz. Narrow grooves were made between the lenses to prevent cracking due to the different thermal expansion coefficients of Si and the epoxy. The surface roughness of the AR coating was Ra of 2.4 to 4.2 μm.

  18. Performance of the reconstruction algorithms of the FIRST experiment pixel sensors vertex detector

    NASA Astrophysics Data System (ADS)

    Rescigno, R.; Finck, Ch.; Juliani, D.; Spiriti, E.; Baudot, J.; Abou-Haidar, Z.; Agodi, C.; Alvarez, M. A. G.; Aumann, T.; Battistoni, G.; Bocci, A.; Böhlen, T. T.; Boudard, A.; Brunetti, A.; Carpinelli, M.; Cirrone, G. A. P.; Cortes-Giraldo, M. A.; Cuttone, G.; De Napoli, M.; Durante, M.; Gallardo, M. I.; Golosio, B.; Iarocci, E.; Iazzi, F.; Ickert, G.; Introzzi, R.; Krimmer, J.; Kurz, N.; Labalme, M.; Leifels, Y.; Le Fevre, A.; Leray, S.; Marchetto, F.; Monaco, V.; Morone, M. C.; Oliva, P.; Paoloni, A.; Patera, V.; Piersanti, L.; Pleskac, R.; Quesada, J. M.; Randazzo, N.; Romano, F.; Rossi, D.; Rousseau, M.; Sacchi, R.; Sala, P.; Sarti, A.; Scheidenberger, C.; Schuy, C.; Sciubba, A.; Sfienti, C.; Simon, H.; Sipala, V.; Tropea, S.; Vanstalle, M.; Younis, H.

    2014-12-01

    Hadrontherapy treatments use charged particles (e.g. protons and carbon ions) to treat tumors. During a therapeutic treatment with carbon ions, the beam undergoes nuclear fragmentation processes giving rise to significant yields of secondary charged particles. An accurate prediction of these production rates is necessary to estimate precisely the dose deposited into the tumours and the surrounding healthy tissues. Nowadays, a limited set of double differential carbon fragmentation cross-section is available. Experimental data are necessary to benchmark Monte Carlo simulations for their use in hadrontherapy. The purpose of the FIRST experiment is to study nuclear fragmentation processes of ions with kinetic energy in the range from 100 to 1000 MeV/u. Tracks are reconstructed using information from a pixel silicon detector based on the CMOS technology. The performances achieved using this device for hadrontherapy purpose are discussed. For each reconstruction step (clustering, tracking and vertexing), different methods are implemented. The algorithm performances and the accuracy on reconstructed observables are evaluated on the basis of simulated and experimental data.

  19. Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: Experimental demonstration at atomic resolution

    DOE PAGESBeta

    Pennycook, Timothy J.; Lupini, Andrew R.; Yang, Hao; Murfitt, Matthew F.; Jones, Lewys; Nellist, Peter D.

    2014-10-15

    In this paper, we demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phasemore » contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. In conclusion, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe.« less

  20. Efficient phase contrast imaging in STEM using a pixelated detector. Part 1: Experimental demonstration at atomic resolution

    SciTech Connect

    Pennycook, Timothy J.; Lupini, Andrew R.; Yang, Hao; Murfitt, Matthew F.; Jones, Lewys; Nellist, Peter D.

    2014-10-15

    In this paper, we demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phase contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. In conclusion, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe.

  1. Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

    NASA Astrophysics Data System (ADS)

    Nellist, C.; Dinu, N.; Gkougkousis, E.; Lounis, A.

    2015-06-01

    The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses. To operate under these challenging new conditions, and maintain excellent performance in track reconstruction and vertex location, the ATLAS pixel detector must be substantially upgraded and a full replacement is expected. Processing techniques for novel pixel designs are optimised through characterisation of test structures in a clean room and also through simulations with Technology Computer Aided Design (TCAD). A method to study non-perpendicular tracks through a pixel device is discussed. Comparison of TCAD simulations with Secondary Ion Mass Spectrometry (SIMS) measurements to investigate the doping profile of structures and validate the simulation process is also presented.

  2. On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.

    NASA Astrophysics Data System (ADS)

    Guskov, A.; Shelkov, G.; Smolyanskiy, P.; Zhemchugov, A.

    2016-02-01

    The scientific apparatus GAMMA-400 designed for study of electromagnetic and hadron components of cosmic rays will be launched to an elliptic orbit with the apogee of about 300 000 km and the perigee of about 500 km. Such a configuration of the orbit allows it to cross periodically the radiation belt and the outer part of magnetosphere. We discuss the possibility to use hybrid pixel detecters based on the Timepix chip and semiconductive sensors on board the GAMMA-400 apparatus. Due to high granularity of the sensor (pixel size is 55 mum) and possibility to measure independently an energy deposition in each pixel, such compact and lightweight detector could be a unique instrument for study of spatial, energy and time structure of electron and proton components of the radiation belt.

  3. The TDCpix readout ASIC: A 75 ps resolution timing front-end for the NA62 Gigatracker hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Kluge, A.; Aglieri Rinella, G.; Bonacini, S.; Jarron, P.; Kaplon, J.; Morel, M.; Noy, M.; Perktold, L.; Poltorak, K.

    2013-12-01

    The TDCpix is a novel pixel readout ASIC for the NA62 Gigatracker detector. NA62 is a new experiment being installed at the CERN Super Proton Synchrotron. Its Gigatracker detector shall provide on-beam tracking and time stamping of individual particles with a time resolution of 150 ps rms. It will consist of three tracking stations, each with one hybrid pixel sensor. The peak flow of particles crossing the detector modules reaches 1.27 MHz/mm2 for a total rate of about 0.75 GHz. Ten TDCpix chips will be bump-bonded to every silicon pixel sensor. Each chip shall perform time stamping of 100 M particle hits per second with a detection efficiency above 99% and a timing accuracy better than 200 ps rms for an overall three-station-setup time resolution of better than 150 ps. The TDCpix chip has been designed in a 130 nm CMOS technology. It will feature 45×40 square pixels of 300×300 μm2 and a complex End of Column peripheral region including an array of TDCs based on DLLs, four high speed serializers, a low-jitter PLL, readout and control circuits. This contribution will describe the complete design of the final TDCpix ASIC. It will discuss design choices, the challenges faced and some of the lessons learned. Furthermore, experimental results from the testing of circuit prototypes will be presented. These demonstrate the achievement of key performance figures such as a time resolution of the processing chain of 75 ps rms with a laser sent to the center of the pixel and the capability of time stamping charged particles with an overall resolution below 200 ps rms.

  4. Five-element Johann-type x-ray emission spectrometer with a single-photon-counting pixel detector

    SciTech Connect

    Kleymenov, Evgeny; Bokhoven, Jeroen A. van; David, Christian; Janousch, Markus; Studer, Marco; Willimann, Markus; Bergamaschi, Anna; Henrich, Beat; Nachtegaal, Maarten; Glatzel, Pieter; Alonso-Mori, Roberto

    2011-06-15

    A Johann-type spectrometer with five spherically bent crystals and a pixel detector was constructed for a range of hard x-ray photon-in photon-out synchrotron techniques, covering a Bragg-angle range of 60 deg. - 88 deg. The spectrometer provides a sub emission line width energy resolution from sub-eV to a few eV and precise energy calibration, better than 1.5 eV for the full range of Bragg angles. The use of a pixel detector allows fast and easy optimization of the signal-to-background ratio. A concentration detection limit below 0.4 wt% was reached at the Cu K{alpha}{sub 1} line. The spectrometer is designed as a modular mobile device for easy integration in a multi-purpose hard x-ray synchrotron beamline, such as the SuperXAS beamline at the Swiss Light Source.

  5. Apodized-aperture pixel design to increase high-frequency DQE and reduce noise aliasing in x-ray detectors

    NASA Astrophysics Data System (ADS)

    Ismailova, Elina; Karim, Karim; Cunningham, Ian A.

    2015-03-01

    The detective quantum efficiency (DQE) of an x-ray detector, expressed as a function of spatial frequency, describes the ability to produce high-quality images relative to an ideal detector. While the DQE normally decreases substantially with increasing frequency, we describe an approach that can be used to improve the DQE response by increasing the DQE at high spatial frequencies. The approach makes use of an apodized-aperture pixel (AAP) design that requires use of a high-resolution x-ray converter such as selenium coupled to a sensor array with very small physical sensor elements, such as CMOS sensors. While sensors with elements of 10 - 25 μm are too small for most practical applications in medical radiography, we describe how larger image pixels of a practical size can be synthesized to provide a better DQE than simple binning or using physical pixels of the same size. A theoretical cascaded-systems analysis shows the DQE at the image sampling cut-off frequency can be improved by up to a factor of 2.5x. The AAP approach was validated experimentally using a CMOS/CsI-based detector having 0.05-mm sensor elements. Using AAP images with 0.2-mm pixels, the high-frequency DQE value was increased from 0.2 to 0.4 compared to simple 4x4 binning. It is concluded that ultra-high-resolution sensors can be used to optimize the high-frequency performance of x-ray detectors and make substantial improvements in image quality for visualization of small stuctures and fine image detail in comparison to current imaging systems.

  6. Experimental study of a single-pixel prototype anti-scatter detector for megavoltage x-ray imaging

    NASA Astrophysics Data System (ADS)

    Tian, Y.; Pang, G.

    2016-02-01

    Scattered x rays are detrimental to the image quality of x-ray transmission radiography. Anti-scatter grids have been used in diagnostic x-ray imaging to improve the image quality but are not practical to use for megavoltage (MV) x-ray imaging in radiotherapy since a MV grid would be very bulky, heavy, and costly. An inherent anti-scatter detector based on Čerenkov radiation was introduced recently for MV x-ray imaging. The purpose of this work is to investigate experimentally the anti-scatter property of a single pixel prototype detector. The scatter to primary ratio (SPR) has been measured using a linear accelerator with a 6 MV x-ray beam. It has been found that the SPR for the prototype detector is 30-60% less than that of an ionization chamber, depending on the imaging geometry. This indicates the prototype detector is less sensitive to scattered radiation.

  7. The use of 2D pixel detectors in micro- and nano-CT applications

    NASA Astrophysics Data System (ADS)

    Dierick, Manuel; Van Hoorebeke, Luc; Jacobs, Patric; Masschaele, Bert; Vlassenbroeck, Jelle; Cnudde, Veerle; De Witte, Yoni

    2008-06-01

    Computed tomography or CT is a non-destructive imaging technique that uses penetrating radiation (mostly X-rays) to visualize the internal structure of a sample. The best-known example is the medical CT scanner, which has become a standard diagnostic tool in medicine, providing detailed views of the body with spatial resolutions below 1 mm. In recent years another type of CT scanner has been developed for mostly industrial and scientific applications, namely micro-CT scanners. These reached spatial resolutions down to a few microns. During 2005 the Radiation Physics research group (Department of Subatomic and Radiation Physics) and the Sedimentary Geology and Engineering Geology research group (Department of Geology and Soil Science) of the Ghent University jointly developed a modular micro-CT setup. The two main goals were to achieve a spatial resolution below 1 μm and to have a very versatile tool providing high-quality images. The source is a dual-head X-ray tube with a transmission type head with a nominal focal spot size of 900 nm below 40 kV tube voltage for high-resolution applications and a directional high-power head (up to 160 kV, up to 150 W), which enables scanning of larger samples. A six-axis sample manipulator system was assembled. The crucial component in this is an ultra-high-precision air-bearing rotation stage to keep all motion errors during rotation well below 1 μm. Depending on the application we have the choice between a number of detectors, each with its own advantages in terms of size, pixel resolution and energy sensitivity.

  8. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

    NASA Astrophysics Data System (ADS)

    Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; De Geronimo, G.; Eger, J.; Emerick, A.; Fried, J.; Hossain, A.; Roy, U.; Salwen, C.; Soldner, S.; Vernon, E.; Yang, G.; James, R. B.

    2016-01-01

    Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.

  9. Nuclear resonant scattering measurements on {sup 57}Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector

    SciTech Connect

    Kishimoto, S. Haruki, R.; Mitsui, T.; Yoda, Y.; Taniguchi, T.; Shimazaki, S.; Ikeno, M.; Saito, M.; Tanaka, M.

    2014-11-15

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.

  10. Development of a soft-X ray detector for energy resolved 2D imaging by means of a Gas Pixel Detector with highly integrated microelectronics

    SciTech Connect

    Pacella, D.; Pizzicaroli, G.; Romano, A.; Gabellieri, L.; Bellazzini, R.; Brez, A.

    2008-03-12

    Soft-X ray 2-D imaging on ITER is not considered yet. We propose a new approach, based on a gas detector with a gas electron multiplier (GEM) as amplifying structure and with a two-dimensional readout fully integrated with the front end electronics, through an ASIC developed on purpose. The concept has been already tested by means of a prototype, with 128 pixels, carried out in Frascati in collaboration with INFN-Pisa and tested on FTU in 2001 and NSTX in 2002-2004. Thanks to the photon counting mode, it provides 2-D imaging with high time resolution (sub millisecond), high sensitivity and signal to noise ratio. Its capability of energy discrimination allows the acquisition of pictures in X-ray energy bands or to perform a spectral scan in the full energy interval. We propose the realisation of such kind a detector with a readout microchip (ASIC) equipped with 105600 hexagonal pixels arranged at 70 {mu}m pitch in a 300x352 honeycomb matrix, corresponding to an active area of 2.1x2.1 cm{sup 2}, with a pixel density of 240 pixels/ mm{sup 2}. Each pixel is connected to a charge sensitive amplifier followed by a discriminator of pulse amplitude and counter. The chip integrates more than 16.5 million transistors and it is subdivided in 64 identical clusters, to be read independently each other. An important part of the work will be also the design of the whole detector to fulfil all the constraints and requirements as plasma diagnostic in a tokamak machine. Since the detector has high and controllable intrinsic gain, it works well even at very low photon energy, ranging from 0.2 keV to 10 keV (X-VUV region). This range appears therefore particularly suitable for ITER to monitor the outer part of the plasma. In particular pedestal physics, edge modes, localization and effects of additional heating, boundary plasma control etc. The capability of this proposed detector to work in this energy range is further valuable because solid state detectors are not favorite at low

  11. Flat detector ghost image reduction by UV irradiation

    NASA Astrophysics Data System (ADS)

    Snoeren, Rudolph M.; Steinhauser, Heidrun; Alving, Lex; Stouten, Hans; de With, Peter H. N.

    2009-02-01

    We study flat detectors for X-ray imaging performance degradation. In cone beam C-arm-CT, memory effects have a detrimental effect on image quality. Depending on the magnitude and history of irradiance differences, detector sensitivity variations may persist for a long period of time (days) and are visible as rings upon 3D reconstruction. A new method is proposed for reducing memory effects produced in CsI:Tl based Flat Detector X-ray imaging, which is based upon trap-filling by UV-light. For experiments, a commercial detector has been modified such that UV back-lighting is accomplished. A regular LED refresh light array for reducing photodiode temporal effects is interleaved with UV LED sub-arrays of different wavelengths in the near UV range. The array irradiates the scintillator through translucent parts of the detector substrate. In order to assess the efficacy of the method, ghost images are imprinted by well-defined transitions between direct radiation and attenuated or shuttered radiation. As an advantage, the new method accomplishes ghost-prevention, either by (1) continuous trap-filling at image-synchronous UV light pulsing, or (2) by applying a single dose of UV light. As a result, ring artefacts in reconstructed 3D-images are reduced to low levels. An effective wavelength has been found and an equilibrium UV dosage could be set for effective trap-filling. The overall sensitivity of the detector increases at saturated trap-filling. It was found that with optimised detector settings, i.e. optimum saturated trap-filling, the dependence on X-ray irradiation levels is low, so that the usage of the detector and its performance is robust.

  12. An ultra-low power self-timed column-level ADC for a CMOS pixel sensor based vertex detector

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Wang, M.

    2014-11-01

    The International Large Detector (ILD) is a detector concept for the future linear collider experiment. The vertex detector is the key tool to achieve high precision measurements for flavor tagging, which puts stringent requirements on the CMOS pixel sensors. Due to the cooling systems which deteriorate the material budget and increase the multiple scattering, it is important to reduce the power consumption. This paper presents an ultra-low power self-timed column-level ADC for the CMOS pixel sensors, aiming to equip the outer layers of the vertex detector. The ADC was designed to operate in two modes (active and idle) adapted to the low hit density in the outer layers. The architecture employs an enhanced sample-and-hold circuit and a self-timed technique. The total power consumption with a 3-V supply is 225μW during idle mode, which is the most frequent situation. This value rises to 425μW in the case of the active mode. It occupies an area of 35 × 590μm2.

  13. The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities

    NASA Astrophysics Data System (ADS)

    Rizzo, G.; Comotti, D.; Fabris, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.; Batignani, G.; Bettarini, S.; Casarosa, G.; Forti, F.; Morsani, F.; Paladino, A.; Paoloni, E.; Dalla Betta, G.-F.; Pancheri, L.; Verzellesi, G.; Xu, H.; Mendicino, R.; Benkechkache, M. A.

    2015-02-01

    The PixFEL project aims to develop an advanced X-ray camera for imaging suited for the demanding requirements of next generation free electron laser (FEL) facilities. New technologies can be deployed to boost the performance of imaging detectors as well as future pixel devices for tracking. In the first phase of the PixFEL project, approved by the INFN, the focus will be on the development of the microelectronic building blocks, carried out with a 65 nm CMOS technology, implementing a low noise analog front-end channel with high dynamic range and compression features, a low power ADC and high density memory. At the same time PixFEL will investigate and implement some of the enabling technologies to assembly a seamless large area X-ray camera composed by a matrix of multilayer four-side buttable tiles. A pixel matrix with active edge will be developed to minimize the dead area of the sensor layer. Vertical interconnection of two CMOS tiers will be explored to build a four-side buttable readout chip with small pixel pitch and all the on-board required functionalities. The ambitious target requirements of the new pixel device are: single photon resolution, 1 to 104 photons @ 1 keV to 10 keV input dynamic range, 10-bit analog to digital conversion up to 5 MHz, 1 kevent in-pixel memory and 100 μm pixel pitch. The long term goal of PixFEL will be the development of a versatile X-ray camera to be operated either in burst mode (European XFEL), or in continuous mode to cope with the high frame rates foreseen for the upgrade phase of the LCLS-II at SLAC.

  14. Ultrafast soft x-ray two-dimensional plasma imaging system based on gas electron multiplier detector with pixel readout

    NASA Astrophysics Data System (ADS)

    Pacella, D.; Pizzicaroli, G.; Gabellieri, L.; Leigheb, M.; Bellazzini, R.; Brez, A.; Gariano, G.; Latronico, L.; Lumb, N.; Spandre, G.; Massai, M. M.; Reale, S.

    2001-02-01

    In the present article a new diagnostic device in the soft x-ray range, for magnetic fusion plasmas, is proposed based on a gas electron multiplier detector with 2.5×2.5 cm active area, equipped with a true two-dimensional readout system. The readout printed circuit board, designed for these experiments, has 128 pads. Each pad is 2 mm square and covers a roughly circular area. The operational conditions of the detector are settled to work in the x-ray range 3-15 keV at very high counting rates, with a linear response up to 2 MHz/pixel. This limitation is due to the electronic dead time. Images of a wrench and two pinholes were done at rates of 2.5 MHz/pixel with a powerful x-ray laboratory source showing an excellent imaging capability. Finally preliminary measurements of x-ray emission from a magnetic fusion plasma were performed on the Frascati tokamak upgrade experiment. The system was able to image the plasma with a wide dynamic range (more than a factor of 100), with a sampling frequency of 20 kHz and with counting rates up to 4 MHz/pixel, following the changes of the x-ray plasma emissivity due to additional radio frequency heating. The spatial resolution and imaging properties of this detector have been studied in this work for conditions of high counting rates and high gain, with the detector fully illuminated by very intense x-ray sources (laboratory tube and tokamak plasma).

  15. Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

    NASA Technical Reports Server (NTRS)

    Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

    2011-01-01

    Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

  16. The ToPiX v4 prototype for the triggerless readout of the PANDA silicon pixel detector

    NASA Astrophysics Data System (ADS)

    Mazza, G.; Calvo, D.; De Remigis, P.; Mignone, M.; Olave, J.; Rivetti, A.; Wheadon, R.; Zotti, L.

    2015-01-01

    ToPiX v4 is the prototype for the readout of the silicon pixel sensors for the Micro Vertex Detector of the PANDA experiment. ToPiX provides position, time and energy measurement of the incoming particles and is designed for the triggerless environment foreseen in PANDA. The prototype includes 640 pixels with a size of 100 × 100 μm2, a 160 MHz time stamp distribution circuit to measure both particle arrival time and released energy (via ToT technique) and the full control logic. The ASIC is designed in a 0.13 μm CMOS technology with SEU protection techniques for the digital parts.

  17. CZT detectors used in different irradiation geometries: Simulations and experimental results

    SciTech Connect

    Fritz, Shannon G.; Shikhaliev, Polad M.

    2009-04-15

    The purpose of this work was to evaluate potential advantages and limitations of CZT detectors used in surface-on, edge-on, and tilted angle irradiation geometries. Simulations and experimental investigations of the energy spectrum measured by a CZT detector have been performed using different irradiation geometries of the CZT. Experiments were performed using a CZT detector with 10x10 mm{sup 2} size and 3 mm thickness. The detector was irradiated with collimated photon beams from Am-241 (59.5 keV) and Co-57 (122 keV). The edge-scan method was used to measure the detector response function in edge-on illumination mode. The tilted angle mode was investigated with the radiation beam directed to the detector surface at angles of 90 degree sign , 15 degree sign , and 10 degree sign . The Hecht formalism was used to simulate theoretical energy spectra. The parameters used for simulations were matched to experiment to compare experimental and theoretical results. The tilted angle CZT detector suppressed the tailing of the spectrum and provided an increase in peak-to-total ratio from 38% at 90 degree sign to 83% at 10 degree sign tilt angle for 122 keV radiation. The corresponding increase for 59 keV radiation was from 60% at 90 degree sign to 85% at 10 degree sign tilt angle. The edge-on CZT detector provided high energy resolution when the beam thickness was much smaller than the thickness of CZT. The FWHM resolution in edge-on illumination mode was 4.2% for 122 keV beam with 0.3 mm thickness, and rapidly deteriorated when the thickness of the beam was increased. The energy resolution of surface-on geometry suffered from strong tailing effect at photon energies higher than 60 keV. It is concluded that tilted angle CZT provides high energy resolution but it is limited to a 1D linear array configuration. The surface-on CZT provides 2D pixel arrays but suffers from tailing effect and charge build up. The edge-on CZT is considered suboptimal as it requires small beam

  18. Charge collection and noise analysis of heavily irradiated silicon detectors

    SciTech Connect

    Borchi, E.; Bruzzi, M.; Pirollo, S.; Sciortino, S.; Leroy, C.

    1998-04-01

    Measurements performed on high-resistivity silicon detectors irradiated with proton and neutron fluences, up to 3.5 {times} 10{sup 14} p/cm{sup 2}, and 4 {times} 10{sup 15} n/cm{sup 2} respectively, are presented. The charge collection efficiency (CCE) and the output noise of the devices have been measured to carry out a detector performance study after irradiation. The CCE is found to slowly decrease for fluences increasing up to approximately 1.8 {times} 10{sup 14} p/cm{sup 2}. For higher particle fluences, the device inefficiency increases rapidly because full depletion could not be reached (up to 75% for the highest fluence: 4 {times} 10{sup 15} n/cm{sup 2}). A complete analysis of the noise of the irradiated devices has been carried out assuming a simple model which correlates the main noise sources to the fluence and the leakage current. A linear dependence of the square of the noise amplitude on the fluence has been observed: a value of the leakage current damage constant has been found to be in good agreement with the values reported in literature, obtained with current-voltage (IV) analysis. An extension of the noise analysis is carried out considering the detectors irradiated with very high fluences, up to 4 {times} 10{sup 15} n/cm{sup 2}.

  19. Bayesian deconvolution as a method for the spectroscopy of X-rays with highly pixelated photon counting detectors

    NASA Astrophysics Data System (ADS)

    Sievers, P.; Weber, T.; Michel, T.; Klammer, J.; Büermann, L.; Anton, G.

    2012-03-01

    The energy deposition spectrum of highly pixelated photon-counting pixel detectors with a semiconductor sensor layer (e.g. silicon) differs significantly from the impinging X-ray spectrum. This is mainly due to Compton scattering, charge sharing, an energy-dependent sensor efficiency, fluorescence photons and back-scattered photons from detector parts. Therefore, the determination of the impinging X-ray spectrum from the measured distribution of the energy deposition in the detector is a non-trivial task. For the deconvolution of the measured distribution into the impinging spectrum, a set of monoenergetic response functions is needed. Those have been calculated with the Monte Carlo simulation framework ROSI, utilizing EGS4 and including all relevant physical processes in the sensor layer. We have investigated the uncertainties that spectrum reconstruction algorithms, like spectrum stripping, impose on reconstruction results. We can show that applying the Bayesian deconvolution method significantly improves the stability of the deconvolved spectrum. This results in a reduced minimum radiation flux needed for reconstruction. In this paper, we present our investigations and measurements on spectrum reconstruction for polychromatic X-ray spectra at low flux with a focus on Bayesian deconvolution.

  20. Charge collection studies in irradiated HV-CMOS particle detectors

    NASA Astrophysics Data System (ADS)

    Affolder, A.; Andelković, M.; Arndt, K.; Bates, R.; Blue, A.; Bortoletto, D.; Buttar, C.; Caragiulo, P.; Cindro, V.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Gorišek, A.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hommels, L. B. A.; Huffman, T.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, G.; Liang, Z.; Mandić, I.; Maneuski, D.; McMahon, S.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Perić, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zavrtanik, M.; Zhang, J.; Zhu, H.

    2016-04-01

    Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

  1. 100 ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

    NASA Astrophysics Data System (ADS)

    Benoit, M.; Cardarelli, R.; Débieux, S.; Favre, Y.; Iacobucci, G.; Nessi, M.; Paolozzi, L.; Shu, K.

    2016-03-01

    A 100 μm thick silicon detector with 1 mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106 ± 1) ps for silicon detectors was measured with minimum ionizing particles.

  2. Observation of Gamma Irradiation-Induced Suppression of Reversed Annealing in Neutron Irradiated MCZ Si Detectors

    SciTech Connect

    Li, Z.; Gul, R.; Harkonen, J.; Kierstead, J.; Metcalfe, J.; Seidel, S.

    2009-02-06

    For the development of radiation-hard Si detectors for the SiD BeamCal program for the future ILC (International Linear Collider), n-type MCZ Si detectors have been irradiated first by fast neutrons to flueneces of 1.5 x 1014 and 3 x 1014 neq/cm2, and then by gamma up to 500 Mrad. The motivation of this mixed radiation project is to develop a Si detector that can utilize the gamma/electron radiation that exists in the ICL radiation environment, which also includes neutrons. By using the positive space charge (SC) created by gamma radiation in MCZ Si detectors, one can cancel the negative space charge created by neutrons, thus reducing the overall/net space charge density and therefore the full depletion voltage of the detector.

  3. Correction of complex nonlinear signal response from a pixel array detector

    DOE PAGESBeta

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-04-22

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering frommore » liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics.« less

  4. Correction of complex nonlinear signal response from a pixel array detector

    SciTech Connect

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-04-22

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering from liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics.

  5. Correction of complex nonlinear signal response from a pixel array detector

    PubMed Central

    van Driel, Tim Brandt; Herrmann, Sven; Carini, Gabriella; Nielsen, Martin Meedom; Lemke, Henrik Till

    2015-01-01

    The pulsed free-electron laser light sources represent a new challenge to photon area detectors due to the intrinsic spontaneous X-ray photon generation process that makes single-pulse detection necessary. Intensity fluctuations up to 100% between individual pulses lead to high linearity requirements in order to distinguish small signal changes. In real detectors, signal distortions as a function of the intensity distribution on the entire detector can occur. Here a robust method to correct this nonlinear response in an area detector is presented for the case of exposures to similar signals. The method is tested for the case of diffuse scattering from liquids where relevant sub-1% signal changes appear on the same order as artifacts induced by the detector electronics. PMID:25931072

  6. High speed data transmission on small gauge cables for the ATLAS Phase-II Pixel detector upgrade

    NASA Astrophysics Data System (ADS)

    Shahinian, J.; Volk, J.; Fadeyev, V.; Grillo, A. A.; Meimban, B.; Nielsen, J.; Wilder, M.

    2016-03-01

    The High Luminosity LHC will present a number of challenges for the upgraded ATLAS detector. In particular, data transmission requirements for the upgrade of the ATLAS Pixel detector will be difficult to meet. The expected trigger rate and occupancy imply multi-gigabit per second transmission rates will be required but radiation levels at the smallest radius preclude completely optical solutions. Electrical transmission up to distances of 7m will be necessary to move optical components to an area with lower radiation levels. Here, we explore the use of small gauge electrical cables as a high-bandwidth, radiation hard solution with a sufficiently small radiation length. In particular, we present a characterization of various twisted wire pair (TWP) configurations of various material structures, including measurements of their bandwidth, crosstalk, and radiation hardness. We find that a custom ``hybrid'' cable consisting of 1m of a multi-stranded TWP with Poly-Ether-Ether-Ketone (PEEK) insulation and a thin Al shield followed by 6m of a thin twin-axial cable presents a low-mass solution that fulfills bandwidth requirements and is expected to be sufficiently radiation hard. Additionally, we discuss preliminary results of using measured S-parameters to produce a SPICE model for a 1m sample of the custom TWP to be used for the development of new pixel readout chips.

  7. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    NASA Astrophysics Data System (ADS)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  8. Development of Superconducting Tunnel Junction X-ray Detector with High Absorption Yields Utilizing Silicon Pixel Absorbers

    NASA Astrophysics Data System (ADS)

    Shiki, Shigetomo; Fujii, Go; Ukibe, Masahiro; Kitajima, Yoshinori; Ohkubo, Masataka

    2016-02-01

    A superconducting tunnel junction (STJ) array detector along with silicon pixel absorbers (STJ-SPA) is fabricated to achieve high detection efficiency at X-ray energies below 10 keV. The STJ pixels have dimensions of 100 \\upmu m × 100 \\upmu m and are composed of Nb-Al/AlOX /Al-Nb thin layers. The SPAs are also 100 \\upmu m × 100 \\upmu m and have a depth of 400 \\upmu m, and are isolated from each other by a deep trench with a depth of 350 \\upmu m. The detection efficiency of the STJ-SPA exceeds 95 % at X-ray energies below 10 keV, and its energy resolution is 82 eV FWHM, as measured at the Si K\\upalpha line at 1740 eV. By means of the STJ-SPA detector, the X-ray absorption spectrum of the light element sulfur with a concentration of less than 0.1 wt% in a soda-lime glass sample was successfully acquired.

  9. Development of Superconducting Tunnel Junction X-ray Detector with High Absorption Yields Utilizing Silicon Pixel Absorbers

    NASA Astrophysics Data System (ADS)

    Shiki, Shigetomo; Fujii, Go; Ukibe, Masahiro; Kitajima, Yoshinori; Ohkubo, Masataka

    2016-07-01

    A superconducting tunnel junction (STJ) array detector along with silicon pixel absorbers (STJ-SPA) is fabricated to achieve high detection efficiency at X-ray energies below 10 keV. The STJ pixels have dimensions of 100 \\upmu m × 100 \\upmu m and are composed of Nb-Al/AlOX/Al-Nb thin layers. The SPAs are also 100 \\upmu m × 100 \\upmu m and have a depth of 400 \\upmu m, and are isolated from each other by a deep trench with a depth of 350 \\upmu m. The detection efficiency of the STJ-SPA exceeds 95 % at X-ray energies below 10 keV, and its energy resolution is 82 eV FWHM, as measured at the Si K\\upalpha line at 1740 eV. By means of the STJ-SPA detector, the X-ray absorption spectrum of the light element sulfur with a concentration of less than 0.1 wt% in a soda-lime glass sample was successfully acquired.

  10. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    NASA Astrophysics Data System (ADS)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  11. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors.

    PubMed

    Cassol, F; Portal, L; Graber-Bolis, J; Perez-Ponce, H; Dupont, M; Kronland, C; Boursier, Y; Blanc, N; Bompard, F; Boudet, N; Buton, C; Clémens, J C; Dawiec, A; Debarbieux, F; Delpierre, P; Hustache, S; Vigeolas, E; Morel, C

    2015-07-21

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. PMID:26133567

  12. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    SciTech Connect

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

  13. Investigating the inverse square law with the Timepix hybrid silicon pixel detector: a CERN@school demonstration experiment

    NASA Astrophysics Data System (ADS)

    Whyntie, T.; Parker, B.

    2013-05-01

    The Timepix hybrid silicon pixel detector has been used to investigate the inverse square law of radiation from a point source as a demonstration of the CERN@school detector kit capabilities. The experiment described uses a Timepix detector to detect the gamma rays emitted by an 241Am radioactive source at a number of different distances. Datasets for each distance were collected, processed and analysed using the Pixelman software suite and CERN’s ROOT analysis software. The inverse square law approximation describes the data well, and so by following the experiment students can make the connection between the relevant elements of the physics curriculum and cutting-edge physics research. Additionally, an analytic model of the detector geometry is used to provide a comparable description of the data without the need for approximations. Such an exercise is typical of the kind of extension activity that can pave the way to students and teachers going beyond the physics curriculum and performing their own research with CERN@school.

  14. Feasibility study of a multi-layer liquid-crystal-based non-pixel X-ray detector

    NASA Astrophysics Data System (ADS)

    Kim, S. H.; Shin, J. W.; Oh, K. M.; Cha, B. Y.; Park, S. K.; Nam, S. H.

    2012-02-01

    The recent study of digital X-ray detectors in medical diagnostics has focused on high-resolution image acquisition. Digital X-ray detectors use either a direct or an indirect method of converting X-ray into an electric charge. Indirect systems have low resolution due to blurring of light from the scintillator. In contrast, direct systems have higher resolution than indirect systems, but they are expensive, and systems that have large areas are difficult. This paper proposes a new structure for a non-pixel detector in order to resolve these problems by constructing multiple layers, including photoconductor and liquid crystal (LC) cell layers. First, simulations were conducted to measure changes in the transmittance and electric field of the LC cell under different applied voltages and different thicknesses of a glass layer between the LC and the photoconductor. Subsequently, non-pixel X-ray films having an optimized structure were fabricated using the optimal glass thickness and voltage obtained from the simulation results. In a previous study, X-ray film was fabricated from an LC and a photoconductor by a single integrated production process. In this study, the fabrication process was divided into two steps to prevent damage to the X-ray conversion materials caused by the high temperature used to manufacture the LC cell. The photoconductor layer was fabricated by screen-printing at room temperature on the LC cell. HgI2 was used as the photoconductor material and an aluminum reflective layer was then deposited. The photoconductor was approximately 150-250μm thick. The linear range of LC twisting was acquired by measuring the transmittance-voltage curve; when a voltage of 1.3V to 2.2V is applied to the LC layer, the LC molecules can be twisted by 10%-90%. The charge generated in the photoconductor and the transmission efficiency of the LC were measured using the modulation potential. The results of this study indicate that an LC-based non-pixel detector is feasible

  15. Success and failure of dead-time models as applied to hybrid pixel detectors in high-flux applications

    PubMed Central

    Sobott, B. A.; Broennimann, Ch.; Schmitt, B.; Trueb, P.; Schneebeli, M.; Lee, V.; Peake, D. J.; Elbracht-Leong, S.; Schubert, A.; Kirby, N.; Boland, M. J.; Chantler, C. T.; Barnea, Z.; Rassool, R. P.

    2013-01-01

    The performance of a single-photon-counting hybrid pixel detector has been investigated at the Australian Synchrotron. Results are compared with the body of accepted analytical models previously validated with other detectors. Detector functionals are valuable for empirical calibration. It is shown that the matching of the detector dead-time with the temporal synchrotron source structure leads to substantial improvements in count rate and linearity of response. Standard implementations are linear up to ∼0.36 MHz pixel−1; the optimized linearity in this configuration has an extended range up to ∼0.71 MHz pixel−1; these are further correctable with a transfer function to ∼1.77 MHz pixel−1. This new approach has wide application both in high-accuracy fundamental experiments and in standard crystallographic X-ray fluorescence and other X-ray measurements. The explicit use of data variance (rather than N 1/2 noise) and direct measures of goodness-of-fit (χr 2) are introduced, raising issues not encountered in previous literature for any detector, and suggesting that these inadequacies of models may apply to most detector types. Specifically, parametrization of models with non-physical values can lead to remarkable agreement for a range of count-rate, pulse-frequency and temporal structure. However, especially when the dead-time is near resonant with the temporal structure, limitations of these classical models become apparent. Further, a lack of agreement at extreme count rates was evident. PMID:23412493

  16. Investigation of hybrid pixel detector arrays by synchrotron-radiation imaging

    NASA Astrophysics Data System (ADS)

    Helfen, L.; Myagotin, A.; Pernot, P.; DiMichiel, M.; Mikulík, P.; Berthold, A.; Baumbach, T.

    2006-07-01

    Synchrotron-radiation imaging was applied to the non-destructive testing of detector devices during their development cycle. Transmission imaging known as computed laminography was used to examine the microstructure of the interconnections in order to investigate the perfection of technological steps necessary for hybrid detector production. A characterisation of the solder bump microstructure can reveal production flaws such as missing or misaligned bumps, voids in bumps or bridges and thus give valuable information about the bonding process.

  17. A count-rate model for PET scanners using pixelated Anger-logic detectors with different scintillators

    NASA Astrophysics Data System (ADS)

    Surti, S.; Karp, J. S.

    2005-12-01

    A high count-rate simulation (HCRSim) model has been developed so that all results are derived from fundamental physics principles. Originally developed to study the behaviour of continuous sodium iodide (NaI(Tl)) detectors, this model is now applied to PET scanners based on pixelated Anger-logic detectors using lanthanum bromide (LaBr3), gadolinium orthosilicate (GSO) and lutetium orthosilicate (LSO) scintillators. This simulation has been used to study the effect on scanner deadtime and pulse pileup at high activity levels due to the scintillator stopping power (μ), decay time (τ) and energy resolution. Simulations were performed for a uniform 20 cm diameter × 70 cm long cylinder (NEMA NU2-2001 standard) in a whole-body scanner with an 85 cm ring diameter and a 25 cm axial field-of-view. Our results for these whole-body scanners demonstrate the potential of a pixelated Anger-logic detector and the relationship of its performance with the scanner NEC rate. Faster signal decay and short coincidence timing window lead to a reduction in deadtime and randoms fraction in the LaBr3 and LSO scanners compared to GSO. The excellent energy resolution of LaBr3 leads to the lowest scatter fraction for all scanners and helps compensate for reduced sensitivity compared to the GSO and LSO scanners, leading to the highest NEC values at high activity concentrations. The LSO scanner has the highest sensitivity of all the scanner designs investigated here, therefore leading to the highest peak NEC value but at a lower activity concentration than that of LaBr3.

  18. A count-rate model for PET scanners using pixelated Anger-logic detectors with different scintillators.

    PubMed

    Surti, S; Karp, J S

    2005-12-01

    A high count-rate simulation (HCRSim) model has been developed so that all results are derived from fundamental physics principles. Originally developed to study the behaviour of continuous sodium iodide (NaI(Tl)) detectors, this model is now applied to PET scanners based on pixelated Anger-logic detectors using lanthanum bromide (LaBr(3)), gadolinium orthosilicate (GSO) and lutetium orthosilicate (LSO) scintillators. This simulation has been used to study the effect on scanner deadtime and pulse pileup at high activity levels due to the scintillator stopping power (mu), decay time (tau) and energy resolution. Simulations were performed for a uniform 20 cm diameter x 70 cm long cylinder (NEMA NU2-2001 standard) in a whole-body scanner with an 85 cm ring diameter and a 25 cm axial field-of-view. Our results for these whole-body scanners demonstrate the potential of a pixelated Anger-logic detector and the relationship of its performance with the scanner NEC rate. Faster signal decay and short coincidence timing window lead to a reduction in deadtime and randoms fraction in the LaBr(3) and LSO scanners compared to GSO. The excellent energy resolution of LaBr(3) leads to the lowest scatter fraction for all scanners and helps compensate for reduced sensitivity compared to the GSO and LSO scanners, leading to the highest NEC values at high activity concentrations. The LSO scanner has the highest sensitivity of all the scanner designs investigated here, therefore leading to the highest peak NEC value but at a lower activity concentration than that of LaBr(3). PMID:16306662

  19. PILATUS: A single photon counting pixel detector for X-ray applications

    NASA Astrophysics Data System (ADS)

    Henrich, B.; Bergamaschi, A.; Broennimann, C.; Dinapoli, R.; Eikenberry, E. F.; Johnson, I.; Kobas, M.; Kraft, P.; Mozzanica, A.; Schmitt, B.

    2009-08-01

    The hybrid pixel technology combines silicon sensors with CMOS-processing chips by a 2D micro bump-bonding interconnection technology developed at Paul Scherrer Institute [C. Broennimann, E.F. Eikenberry, B. Henrich, R. Horisberger, G. Huelsen, E. Pohl, B. Schmitt, C. Schulze-Briese, M. Suzuki, T. Tomizaki, H. Toyokawa, A. Wagner. J. Synchrotron Rad. 13 (2005) 120 [1]; T. Rohe, C. Broennimann, F. Glaus, J. Gobrecht, S. Heising, M. Horisberger, R. Horisberger, H.C. Kaestl, J. Lehmann, S. Streuli, Nucl. Instr. and Meth. Phys. Res. A 565 (2006) 303 [2

  20. FDM Readout Assembly with Flexible, Superconducting Connection to Cryogenic kilo-Pixel TES Detectors

    NASA Astrophysics Data System (ADS)

    Bruijn, M. P.; van der Linden, A. J.; Ridder, M. L.; van Weers, H. J.

    2016-07-01

    We describe a new fabrication process for a superconducting, flexible, and demountable connector to a kilo-pixel transition edge sensor. The demountable part contains planar coils for inductive coupling, in particular suited for AC-biased frequency domain multiplexed readout. A fixed connection to a chip with superconducting LC filters and SQUID readout is made by gold bump bonding with a connection resistance of 1.1 {× } 10^{-4} Ω . The Nb-based connecting lines on the flexible part show a superconducting transition around 7 K, which enables testing of connectors and LC filters in a simple L-He setup.

  1. Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

    NASA Astrophysics Data System (ADS)

    Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F. R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.

    2016-07-01

    In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

  2. Four-layer depth-of-interaction PET detector for high resolution PET using a multi-pixel S8550 avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Nishikido, Fumihiko; Inadama, Naoko; Oda, Ichiro; Shibuya, Kengo; Yoshida, Eiji; Yamaya, Taiga; Kitamura, Keishi; Murayama, Hideo

    2010-09-01

    Avalanche photodiodes (APDs) are being used as photodetectors in positron emission tomography (PET) because they have many advantages over photomultipliers (PMTs) typically used in PET detectors. We have developed a PET detector that consists of a multi-pixel APD and a 6×6×4 array of 1.46×1.46 mm 2×4.5 m LYSO crystals for a small animal PET scanner. The detector can identify four-layer depth of interaction (DOI) with a position-sensitive APD coupled to the backside of a crystal array by just an optimized reflector arrangement. Since scintillation lights are shared among many pixels by the method, weaker signals in APD pixels far from the interacting crystals are affected by noise. To evaluate the performance of the four-layer DOI detector with the APD and the influence of electrical noise on our method, we constructed a prototype DOI detector and tested its performance. We found, except for crystal elements on the edge of the crystal array, all crystal elements could be identified from the 2D position histogram. An energy resolution of 16.9% was obtained for the whole crystal array of the APD detector. The results of noise dependence of detector performances indicated that the DOI detector using the APD could achieve sufficient performance even when using application-specific integrated circuits.

  3. First look at the beam test results of the FPIX2 readout chip for the BTeV silicon pixel detector

    SciTech Connect

    Uplegger, L.; Appel, J.A.; Artuso, M.; Cardoso, G.; Cease, H.P.; Chiodini, G.; Christian, D.C.; Cinabro, D.A.; Coluccia, R.; Hoff, J.; Kwan, S.; Magni, S.; Mekkaoui, A.; Menasce, D.; Newsom, C.; Papavassiliou, V.; Schreiner, A.; Turqueti, M.A.; Yarema, R.; Wang, J.C.; /Fermilab /Syracuse U. /INFN, Lecce /Wayne State U. /INFN, Milan /Iowa U. /New Mexico State U.

    2004-11-01

    High energy and nuclear physics experiments need tracking devices with excellent spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is a technology able to meet these challenges. We report the first results of the BTeV silicon pixel detector beam test carried out at Fermilab in summer 2004. Tests were performed using a 120 GeV/c proton beam incident on a 6 planes pixel detector telescope. The last prototype developed for the BTeV experiment (FPIX2) is tested in the middle of the telescope. There is no external trigger and events were built using the time-stamp information provided by the readout chips.

  4. Test-beam results of a silicon pixel detector with Time-over-Threshold read-out having ultra-precise time resolution

    NASA Astrophysics Data System (ADS)

    Aglieri Rinella, G.; Cortina Gil, E.; Fiorini, M.; Kaplon, J.; Kluge, A.; Marchetto, F.; Albarran, M. E. Martin; Morel, M.; Noy, M.; Perktold, L.; Tiuraniem, S.; Velghe, B.

    2015-12-01

    A time-tagging hybrid silicon pixel detector developed for beam tracking in the NA62 experiment has been tested in a dedicated test-beam at CERN with 10 GeV/c hadrons. Measurements include time resolution, detection efficiency and charge sharing between pixels, as well as effects due to bias voltage variations. A time resolution of less than 150 ps has been measured with a 200 μm thick silicon sensor, using an on-pixel amplifier-discriminator and an end-of-column DLL-based time-to-digital converter.

  5. An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models.

    PubMed

    Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L

    2016-02-01

    A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

  6. An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models

    NASA Astrophysics Data System (ADS)

    Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L.

    2016-02-01

    A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

  7. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    NASA Astrophysics Data System (ADS)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  8. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-01

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal. PMID:21081823

  9. A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

    NASA Astrophysics Data System (ADS)

    Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

    2015-08-01

    This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

  10. Wafer-scale pixelated scintillator and specially designed data acquisition system for fiber optic taper array-coupled digital x-ray detector

    NASA Astrophysics Data System (ADS)

    Zhao, Zhigang; Li, Ji; Lei, Yaohu; Wang, Ru; Ren, Jianping; Qiao, Jian; Niu, Hanben

    2015-09-01

    A digital x-ray detector scheme based on a pixelated scintillator coupled with a fiber optic (FOT) array is suitable for many high-resolution x-ray imaging applications. However, certain challenges need to be addressed for fabrication of wafer-scale uniform pixelated x-ray scintillators. In addition, difficulties associated with implementation of the data acquisition system for acquiring output image data from the multiple image sensors used in the detector also need to be addressed. In this paper, a 2×2 FOT array-coupled digital x-ray detector scheme using a 5-in. pixelated scintillator is proposed. A novel fabrication setup along with the corresponding processes for fabricating the wafer-scale pixelated scintillator and implementation of a specially designed embedded data acquisition system based on a single embedded micro-processer (ARM) and four field-programmable gate array (FPGA) chips are discussed in detail. Preliminary experiments demonstrate that this pixelated scintillator-based digital x-ray detector scheme with an active imaging area of about 100 mm×100 mm shows considerable potential for use in high-resolution x-ray imaging.

  11. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

    2002-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  12. A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

    NASA Technical Reports Server (NTRS)

    Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

    2001-01-01

    Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

  13. Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time.

    PubMed

    Zhang, Qingteng; Dufresne, Eric M; Grybos, Pawel; Kmon, Piotr; Maj, Piotr; Narayanan, Suresh; Deptuch, Grzegorz W; Szczygiel, Robert; Sandy, Alec

    2016-05-01

    Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. The potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed. PMID:27140146

  14. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    SciTech Connect

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application.

  15. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    NASA Astrophysics Data System (ADS)

    Da Via, Cinzia; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Chris; Kok, Angela; Parker, Sherwood; Pellegrini, Giulio; Vianello, Elisa; Zorzi, Nicola

    2012-12-01

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as ˜4 μm. Since 2009 four industrial partners of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of ˜4 cm2. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  16. Development of Pattern Recognition Software for Tracks of Ionizing Radiation In Medipix2-Based (TimePix) Pixel Detector Devices

    NASA Astrophysics Data System (ADS)

    Vilalta, R.; Kuchibhotla, S.; Valerio, R.; Pinsky, L.

    2011-12-01

    The principal aim of our project is to develop an efficient pattern recognition tool for the automated identification and classification of tracks of ionizing radiation as measured by a TimePix version of the hybrid semiconductor Medipix2 pixel detector system. Such a software tool would have a number of applications including dosimeters to assess the risk of human exposure to radiation, and area monitors to characterize the general background radiation environment harmful to humans and electronic equipment. We are particularly interested in the development of the real-time analysis software needed to support an operational dosimeter that can assess the radiation environment during space missions. Our software development project makes use of data taken in beams of heavy ions at HIMAC (Heavy Ion Medical Accelerator Facility) in Chiba, Japan, including data from several different heavy ions with similar Linear Energy Transfers (LETs) for calibration purposes. We describe two modules of our pattern recognition tool: feature generation and classification. Our first module builds on a segmentation algorithm that identifies tracks from the pixel image assuming an approximately elliptical form that varies in size and degree of elongation based on multiple factors, including the particle species and angle of incidence. Determining the charge and energy of the particles creating each track is a particularly challenging task because different energy and charge incident particles can produce very similar patterns. Our classification module invokes different algorithms such as decision trees, support vector machines, and Bayesian classifiers.

  17. Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

    SciTech Connect

    La Rosa, Alessandro; Boscardin, M.; Dalla Betta, G.-F.; Darbo, G.; Gemme, C.; Pernegger, H.; Piemonte, C.; Povoli, M.; Ronchin, S.; Zoboli, A.; Zorzi, N.; Bolle, E.; Borri, M.; Da Via, C.; Dong, S.; Fazio, S.; Grenier, P.; Grinstein, S.; Gjersdal, H.; Hansson, P.; Huegging, F.; /Bonn U. /SLAC /INFN, Turin /Turin U. /Oslo U. /Bergen U. /Oslo U. /Prague, Tech. U. /Bonn U. /SUNY, Stony Brook /Bonn U. /SLAC

    2012-04-04

    3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.

  18. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    NASA Astrophysics Data System (ADS)

    Konstantinidis, Anastasios C.; Szafraniec, Magdalena B.; Speller, Robert D.; Olivo, Alessandro

    2012-10-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a “thin” one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise (∼360 e-), high full well capacity (∼1.5×106 e-) and wide dynamic range (∼73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower (∼165) at the expense of a reduced full well capacity (∼0.5×106 e-) and dynamic range (∼69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and general radiography systems, obtained under similar experimental conditions. This demonstrates the suitability

  19. SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

    SciTech Connect

    Joshi, S; Kaye, W; Jaworski, J; He, Z

    2015-06-15

    Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinhole camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for

  20. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    NASA Astrophysics Data System (ADS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  1. Enhancing spatial resolution of 18F positron imaging with the Timepix detector by classification of primary fired pixels using support vector machine

    NASA Astrophysics Data System (ADS)

    Wang, Qian; Liu, Zhen; Ziegler, Sibylle I.; Shi, Kuangyu

    2015-07-01

    Position-sensitive positron cameras using silicon pixel detectors have been applied for some preclinical and intraoperative clinical applications. However, the spatial resolution of a positron camera is limited by positron multiple scattering in the detector. An incident positron may fire a number of successive pixels on the imaging plane. It is still impossible to capture the primary fired pixel along a particle trajectory by hardware or to perceive the pixel firing sequence by direct observation. Here, we propose a novel data-driven method to improve the spatial resolution by classifying the primary pixels within the detector using support vector machine. A classification model is constructed by learning the features of positron trajectories based on Monte-Carlo simulations using Geant4. Topological and energy features of pixels fired by 18F positrons were considered for the training and classification. After applying the classification model on measurements, the primary fired pixels of the positron tracks in the silicon detector were estimated. The method was tested and assessed for [18F]FDG imaging of an absorbing edge protocol and a leaf sample. The proposed method improved the spatial resolution from 154.6   ±   4.2 µm (energy weighted centroid approximation) to 132.3   ±   3.5 µm in the absorbing edge measurements. For the positron imaging of a leaf sample, the proposed method achieved lower root mean square error relative to phosphor plate imaging, and higher similarity with the reference optical image. The improvements of the preliminary results support further investigation of the proposed algorithm for the enhancement of positron imaging in clinical and preclinical applications.

  2. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature. PMID:24187382

  3. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  4. Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector.

    PubMed

    Stantchev, Rayko Ivanov; Sun, Baoqing; Hornett, Sam M; Hobson, Peter A; Gibson, Graham M; Padgett, Miles J; Hendry, Euan

    2016-06-01

    Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm(2)) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging. PMID:27386577

  5. Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector

    PubMed Central

    Stantchev, Rayko Ivanov; Sun, Baoqing; Hornett, Sam M.; Hobson, Peter A.; Gibson, Graham M.; Padgett, Miles J.; Hendry, Euan

    2016-01-01

    Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm2) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging. PMID:27386577

  6. Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications

    NASA Astrophysics Data System (ADS)

    Wang, Kai; Yazdandoost, Mohammad Y.; Keshavarzi, Rasoul; Shin, Kyung-Wook; Hristovski, Christos; Abbaszadeh, Shiva; Chen, Feng; Majid, Shaikh Hasibul; Karim, Karim S.

    2011-03-01

    Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.

  7. Microalgae on display: a microfluidic pixel-based irradiance assay for photosynthetic growth.

    PubMed

    Graham, Percival J; Riordon, Jason; Sinton, David

    2015-08-01

    Microalgal biofuel is an emerging sustainable energy resource. Photosynthetic growth is heavily dependent on irradiance, therefore photobioreactor design optimization requires comprehensive screening of irradiance variables, such as intensity, time variance and spectral composition. Here we present a microfluidic irradiance assay which leverages liquid crystal display technology to provide multiplexed screening of irradiance conditions on growth. An array of 238 microreactors are operated in parallel with identical chemical environments. The approach is demonstrated by performing three irradiance assays. The first assay evaluates the effect of intensity on growth, quantifying saturating intensity. The second assay quantifies the influence of time-varied intensity and the threshold frequency for growth. Lastly, the coupled influence of red-blue spectral composition and intensity is assessed. Each multiplexed assay is completed within three days. In contrast, completing the same number of experiments using conventional incubation flasks would require several years. Not only does our approach enable more rapid screening, but the short optical path avoids self-shading issues inherent to flask based systems. PMID:26085371

  8. Characterization of the PILATUS photon-counting pixel detector for X-ray energies from 1.75 keV to 60 keV

    NASA Astrophysics Data System (ADS)

    Donath, T.; Brandstetter, S.; Cibik, L.; Commichau, S.; Hofer, P.; Krumrey, M.; Lüthi, B.; Marggraf, S.; Müller, P.; Schneebeli, M.; Schulze-Briese, C.; Wernecke, J.

    2013-03-01

    The PILATUS detector module was characterized in the PTB laboratory at BESSY II comparing modules with 320 μm thick and newly developed 450 μm and 1000 μm thick silicon sensors. Measurements were carried out over a wide energy range, in-vacuum from 1.75 keV to 8.8 keV and in air from 8 keV to 60 keV. The quantum efficiency (QE) was measured as a function of energy and the spatial resolution was measured at several photon energies both in terms of the modulation transfer function (MTF) from edge profile measurements and by directly measuring the point spread function (PSF) of a single pixel in a raster scan with a pinhole beam. Independent of the sensor thickness, the measured MTF and PSF come close to those for an ideal pixel detector with the pixel size of the PILATUS detector (172 × 172 μm2). The measured QE follows the values predicted by calculation. Thicker sensors significantly enhance the QE of the PILATUS detectors for energies above 10 keV without impairing the spatial resolution and noise-free detection. In-vacuum operation of the PILATUS detector is possible at energies as low as 1.75 keV.

  9. High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

    NASA Astrophysics Data System (ADS)

    Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

    2016-01-01

    State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

  10. Characterization of imaging performance of a large-area CMOS active-pixel detector for low-energy X-ray imaging

    NASA Astrophysics Data System (ADS)

    Hwy Lim, Chang; Yun, Seungman; Chul Han, Jong; Kim, Ho Kyung; Farrier, Michael G.; Graeve Achterkirchen, Thorsten; McDonald, Mike; Cunningham, Ian A.

    2011-10-01

    We report the imaging characteristics of the recently developed large-area complementary metal-oxide-semiconductor (CMOS) active-pixel detector for low-energy digital X-ray imaging applications. The detector consists of a scintillator to convert X-ray into light and a photodiode pixel array made by the CMOS fabrication process to convert light into charge signals. Between two layers, we introduce a fiber-optic faceplate (FOP) to avoid direct absorption of X-ray photons in the photodiode array. A single pixel is composed of a photodiode and three transistors, and the pixel pitch is 96 μm. The imaging characteristics of the detector have been investigated in terms of modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). From the measured results, the MTF at the Nyquist frequency is about 20% and the DQE around zero-spatial frequency is about 40%. Simple cascaded linear-systems analysis has showed that the FOP prevents direct absorption of X-ray photons within the CMOS photodiode array, leading to a lower NPS and consequently improved DQE especially at high spatial frequencies.

  11. Radiation tolerance studies of neutron irradiated double sided silicon microstrip detectors

    NASA Astrophysics Data System (ADS)

    Singla, M.; Larionov, P.; Balog, T.; Heuser, J.; Malygina, H.; Momot, I.; Sorokin, I.; Sturm, C.

    2016-07-01

    Radiation tolerance studies were made on double-sided silicon microstrip detectors for the Silicon Tracking System of the Compressed Baryonic Matter experiment at FAIR. The prototype detectors from two different vendors were irradiated to twice the highest expected fluence (1 ×1014 1 MeVneqcm-2) in the CBM experimental runs of several years. Test results from these prototype detectors both before and after irradiations have been discussed.

  12. Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment

    NASA Astrophysics Data System (ADS)

    Mazza, G.; Balossino, I.; Calvo, D.; De Mori, F.; De Remigis, P.; Filippi, A.; Marcello, S.; Mignone, M.; Wheadon, R.; Zotti, L.; Candelori, A.; Mattiazzo, S.; Silvestrin, L.

    2014-01-01

    The Silicon Pixel Detector (SPD) of the future PANDA experiment is the closest one to the interaction point and therefore the sensor and its electronics are the most exposed to radiation. The Total Ionizing Dose (TID) issue has been addressed by the use of a deep-submicron technology (CMOS 0.13 μm) for the readout ASICs. While this technology is very effective in reducing radiation induced oxide damage, it is also more sensitive to Single Event Upset (SEU) effects due to their extremely reduced dimensions. This problem has to be addressed at the circuit level and generally leads to an area penalty. Several techniques have been proposed in literature with different trade-off between level of protection and cell size. A subset of these techniques has been implemented in the PANDA SPD ToPiX readout ASIC prototypes, ranging from DICE cells to triple redundancy. Two prototypes have been tested with different ion beams at the INFN-LNL facility in order to measure the SEU cross section. Comparative results of the SEU test will be shown, together with an analysis of the SEU tolerance of the various protection schemes and future plans for the SEU protection strategy which will be implemented in the next ToPiX prototype.

  13. Realistic PET Monte Carlo Simulation With Pixelated Block Detectors, Light Sharing, Random Coincidences and Dead-Time Modeling

    PubMed Central

    Guérin, Bastein; Fakhri, Georges El

    2008-01-01

    We have developed and validated a realistic simulation of random coincidences, pixelated block detectors, light sharing among crystal elements and dead-time in 2D and 3D positron emission tomography (PET) imaging based on the SimSET Monte Carlo simulation software. Our simulation was validated by comparison to a Monte Carlo transport code widely used for PET modeling, GATE, and to measurements made on a PET scanner. Methods We have modified the SimSET software to allow independent tracking of single photons in the object and septa while taking advantage of existing voxel based attenuation and activity distributions and validated importance sampling techniques implemented in SimSET. For each single photon interacting in the detector, the energy-weighted average of interaction points was computed, a blurring model applied to account for light sharing and the associated crystal identified. Detector dead-time was modeled in every block as a function of the local single rate using a variance reduction technique. Electronic dead-time was modeled for the whole scanner as a function of the prompt coincidences rate. Energy spectra predicted by our simulation were compared to GATE. NEMA NU-2 2001 performance tests were simulated with the new simulation as well as with SimSET and compared to measurements made on a Discovery ST (DST) camera. Results Errors in simulated spatial resolution (full width at half maximum, FWHM) were 5.5% (6.1%) in 2D (3D) with the new simulation, compared with 42.5% (38.2%) with SimSET. Simulated (measured) scatter fractions were 17.8% (21.3%) in 2D and 45.8% (45.2%) in 3D. Simulated and measured sensitivities agreed within 2.3 % in 2D and 3D for all planes and simulated and acquired count rate curves (including NEC) were within 12.7% in 2D in the [0: 80 kBq/cc] range and in 3D in the [0: 35 kBq/cc] range. The new simulation yielded significantly more realistic singles’ and coincidences’ spectra, spatial resolution, global sensitivity and lesion

  14. Development of an X-ray pixel detector with multi-port charge-coupled device for X-ray free-electron laser experiments

    SciTech Connect

    Kameshima, Takashi; Ono, Shun; Kudo, Togo; Ozaki, Kyosuke; Kirihara, Yoichi; Kobayashi, Kazuo; Inubushi, Yuichi; Yabashi, Makina; Hatsui, Takaki; Horigome, Toshio; Holland, Andrew; Holland, Karen; Burt, David; Murao, Hajime

    2014-03-15

    This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 10{sup 14} photon/mm{sup 2}. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status.

  15. Continued Development of Small-Pixel CZT and CdTe Detectors for Future High-Angular-Resolution Hard X-ray Missions

    NASA Astrophysics Data System (ADS)

    Krawczynski, Henric

    The Nuclear Spectroscopic Telescope Array (NuSTAR) Small Explorer Mission was launched in June 2012 and has demonstrated the technical feasibility and high scientific impact of hard X-ray astronomy. We propose to continue our current R&D program to develop finely pixelated semiconductor detectors and the associated readout electronics for the focal plane of a NuSTAR follow-up mission. The detector-ASIC (Application Specific Integrated Circuit) package will be ideally matched to the new generation of low-cost, low-mass X-ray mirrors which achieve an order of magnitude better angular resolution than the NuSTAR mirrors. As part of this program, the Washington University group will optimize the contacts of 2x2 cm^2 footprint Cadmium Zinc Telluride (CZT) and Cadmium Telluride (CdTe) detectors contacted with 100x116 hexagonal pixels at a next-neighbor pitch of 200 microns. The Brookhaven National Laboratory group will design, fabricate, and test the next generation of the HEXID ASIC matched to the new X-ray mirrors and the detectors, providing a low-power 100x116 channel ASIC with extremely low readout noise (i.e. with a root mean square noise of 13 electrons). The detectors will be tested with radioactive sources and in the focal plane of high-angular-resolution X-ray mirrors at the X-ray beam facilities at the Goddard and Marshall Space Flight Centers.

  16. Simulation of the Expected Performance of a Seamless Scanner for Brain PET Based on Highly Pixelated CdTe Detectors

    PubMed Central

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-01-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels cm3, for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1×1×2 mm3), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept. PMID:24108750

  17. The Cryogenic AntiCoincidence Detector for the ATHENA X-IFU: Design Aspects by Geant4 Simulation and Preliminary Characterization of the New Single Pixel

    NASA Astrophysics Data System (ADS)

    Macculi, C.; Argan, A.; D'Andrea, M.; Lotti, S.; Piro, L.; Biasotti, M.; Corsini, D.; Gatti, F.; Orlando, A.; Torrioli, G.

    2016-01-01

    The ATHENA observatory is the second large-class ESA mission, in the context of the Cosmic Vision 2015-2025, scheduled to be launched on 2028 at L2 orbit. One of the two planned focal plane instruments is the X-ray Integral Field Unit (X-IFU), which will be able to perform simultaneous high-grade energy spectroscopy and imaging over the 5 arcmin FoV by means of a kilo-pixel array of transition-edge sensor (TES) microcalorimeters, coupled to a high-quality X-ray optics. The X-IFU sensitivity is degraded by the particle background, induced by primary protons of both solar and cosmic rays' origin and secondary electrons. A Cryogenic AntiCoincidence (CryoAC) TES-based detector, located < 1 mm below the TES array, will allow the mission to reach the background level that enables its scientific goals. The CryoAC is a 4-pixel detector made of Silicon absorbers sensed by Iridium TESs. We currently achieve a TRL = 3-4 at the single-pixel level. We have designed and developed two further prototypes in order to reach TRL = 4. The design of the CryoAC has been also optimized using the Geant4 simulation tool. Here we will describe some results from the Geant4 simulations performed to optimize the design and preliminary test results from the first of the two detectors, 1 cm2 area, made of 65 Ir TESs.

  18. The Cryogenic AntiCoincidence Detector for the ATHENA X-IFU: Design Aspects by Geant4 Simulation and Preliminary Characterization of the New Single Pixel

    NASA Astrophysics Data System (ADS)

    Macculi, C.; Argan, A.; D'Andrea, M.; Lotti, S.; Piro, L.; Biasotti, M.; Corsini, D.; Gatti, F.; Orlando, A.; Torrioli, G.

    2016-08-01

    The ATHENA observatory is the second large-class ESA mission, in the context of the Cosmic Vision 2015-2025, scheduled to be launched on 2028 at L2 orbit. One of the two planned focal plane instruments is the X-ray Integral Field Unit (X-IFU), which will be able to perform simultaneous high-grade energy spectroscopy and imaging over the 5 arcmin FoV by means of a kilo-pixel array of transition-edge sensor (TES) microcalorimeters, coupled to a high-quality X-ray optics. The X-IFU sensitivity is degraded by the particle background, induced by primary protons of both solar and cosmic rays' origin and secondary electrons. A Cryogenic AntiCoincidence (CryoAC) TES-based detector, located <1 mm below the TES array, will allow the mission to reach the background level that enables its scientific goals. The CryoAC is a 4-pixel detector made of Silicon absorbers sensed by Iridium TESs. We currently achieve a TRL = 3-4 at the single-pixel level. We have designed and developed two further prototypes in order to reach TRL = 4. The design of the CryoAC has been also optimized using the Geant4 simulation tool. Here we will describe some results from the Geant4 simulations performed to optimize the design and preliminary test results from the first of the two detectors, 1 cm2 area, made of 65 Ir TESs.

  19. Basic approach to define signal-to-noise ratio for adjacent pixels for an uncooled microbolometer FPA detector

    NASA Astrophysics Data System (ADS)

    Kürüm, Ulas

    2013-09-01

    To define the ratio of the signal of the desired pixel and the noise of adjacent pixels, noise and signal sources are theoretically identified. While defining these values, atmospheric attenuation, losses at transmitting surfaces and wave characteristics of light are considered. For presentation purposes, a standard NATO target is chosen as source object. The model has been developed for a simple optical design which is intentionally left defective to better address effects of aberrations to signal to noise ratio of adjacent pixels especially caused by diffraction.

  20. The influence of sunlight irradiation on the characteristics of InGaAs detectors

    NASA Astrophysics Data System (ADS)

    Shao, Xiumei; Zhu, Yaoming; Li, Xue; Tang, Hengjing; Li, Tao; Gong, Haimei

    2014-10-01

    InGaAs ternary compound is suitable for detector applications in the shortwave infrared (SWIR) band. Due to the advantages of good stability, low cooling requirements and high detectivity, InGaAs detectors have been applied widely in the space remote sensing area. However, InGaAs detectors would be affected by strong sunlight direct irradiation in space application. In this paper, a mesa-type InGaAs detector with large sensitive area of diameter 5mm was designed based on InP/In0.53Ga0.47As/InP epitaxial material, which is lattice-matched to InP substrate. The InGaAs detectors were fabricated by ICP etching, and packaged in a Kovar shell. The relative spectral response is in the range of 0.9μm to 1.7μm. The mechanism of the sunlight direct irradiation on InGaAs detector performance was studied. The sunlight were focalized by lens and irradiated directly on the detector. A piece of epitaxial material was investigated at the same time which was cleaved from a 2 inch wafer, same to the detector material. The real time testing was taken out to observe the output signal of the detector. After the irradiation experiment, the I-V curves and the relative response were tested immediately. The dark current of the detector increased temporarily, but come back to the original level after 24 hours. The response spectrum was nearly not affected. The XRD testing of the epitaxial material sample was carried out before and after sunlight direct irradiation. The sunlight irradiation causes thermal stress degradation. The thermal electrons were produced by the absorption of a great deal of visible light, leading to local enhancement of temperature and the lattice degeneration of the material.

  1. Comparison of two position sensitive gamma-ray detectors based on continuous YAP and pixellated NaI(TI) for nuclear medical imaging applications

    NASA Astrophysics Data System (ADS)

    Zhu, Jie; Ma, Hong-Guang; Ma, Wen-Yan; Zeng, Hui; Wang, Zhao-Min; Xu, Zi-Zhong

    2008-11-01

    Dedicated position sensitive gamma-ray detectors based on position sensitive photomultiplier tubes (PSPMTs) coupled to scintillation crystals, have been used for the construction of compact gamma-ray imaging systems, suitable for nuclear medical imaging applications such as small animal imaging and single organ imaging and scintimammography. In this work, the performance of two gamma-ray detectors: a continuous YAP scintillation crystal coupled to a Hamamastu R2486 PSPMT and a pixellated NaI(TI) scintillation array crystal coupled to the same PSPMT, is compared. The results show that the gamma-ray detector based on a pixellated NaI(TI) scintillation array crystal is a promising candidate for nuclear medical imaging applications, since their performance in terms of position linearity, spatial resolution and effective field of view (FOV) is superior than that of the gamma-ray detector based on a continuous YAP scintillation crystal. However, a better photodetector (Hamamatau H8500 Flat Panel PMT, for example) coupled to the continuous crystal is also likely a good selection for nuclear medicine imaging applications. Supported by National Nature Science Foundation of China (10275063)

  2. Toward Mega-pixel Neutron Imager Using Current-Biased Kinetic Inductance Detectors of Nb Nanowires with $(10) $ 10 B Converter

    NASA Astrophysics Data System (ADS)

    Ishida, Takekazu; Yoshioka, Naohito; Narukami, Yoshito; Shishido, Hiroaki; Miyajima, Shigeyuki; Fujimaki, Akira; Miki, Shigehito; Wang, Zhen; Hidaka, Mutsuo

    2014-08-01

    We present not the results but the idea of a superconducting nanowire detector with B conversion layer for sensing a single neutron. We use Li ion and He ion emitted as two independent heat sources, which appear in opposite direction associated with nuclear reaction B(n,He)Li. We probe a change in the kinetic inductance coming from inertia of the Cooper pairs. Our detector is different from a conventional kinetic inductance detector (KID), but is named as a current-biased KID. We use two sets of Nb nanowires with superconducting readout taps to monitor the local signal. In between the X meander and the Y meander, we inserted a B layer acting as a conversion layer from neutrons to charged particles. We plan to fabricate a mega-pixel neutron imager by coupling 10 bit linear position-sensitive arrays along the X and Y directions with the single flux quantum readout circuits.

  3. TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors

    SciTech Connect

    Luukka, P.; Harkonen, J.; Maenpaa, T.; Betchart, B.; Czellar, S.; Demina, R.; Furgeri, A.; Gotra, Y.; Frey, M.; Hartmann, F.; Korjenevski, S.; ,

    2009-01-01

    Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6x1014 1 MeV neq/cm2 fluence. In the beam test a signal-to-noise (S/N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/N ratio of 20 for the sensors irradiated to the fluences of 1x1014 1 and 5x1014 1 MeV neq/cm2.

  4. Color changes in CR-39 nuclear track detector by gamma and laser irradiation

    NASA Astrophysics Data System (ADS)

    Nouh, S. A.; Said, A. F.; Atta, M. R.; El-Melleegy, W. M.; El-Meniawy, S.

    2006-07-01

    A study of the effect of gamma and laser irradiation on the color changes of polyallyl diglycol (CR-39) solid-state nuclear track detector was performed. CR-39 detector samples were classified into two main groups. The first group was irradiated with gamma doses at levels between 20 and 300 kGy, whereas the second group was exposed to infrared laser radiation with energy fluences at levels between 0.71 and 8.53 J/cm(2) . The transmission of these samples in the wavelength range 300-2500 nm, as well as any color changes, was studied. Using the transmission data, both the tristimulus and the coordinate values of the Commission Internationale de l'Eclairage (CIE) LAB were calculated. Also, the color differences between the non-irradiated samples and those irradiated with different gamma or laser doses were calculated. The results indicate that the CR-39 detector acquires color changes under gamma or laser irradiation, but it has more response to color changes by gamma irradiation. In addition, structural property studies using infrared spectroscopy were performed. The results indicate that the irradiation of a CR-39 detector with gamma or laser radiations causes the cleavage of the carbonate linkage that can be attributed to the H abstraction from the backbone of the polymer, associated with the formation of CO 2 and OH with varying intensities.

  5. Avalanche Effect in Si Heavily Irradiated Detectors: Physical Model and Perspectives for Application

    SciTech Connect

    Eremin V.; Li Z.; Verbitskaya, E.; Zabrodskii, A.; Harkonen, J.

    2011-05-07

    The model explaining an enhanced collected charge in detectors irradiated to 10{sup 15}-10{sup 16} n{sub eq}/cm{sup 2} is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier avalanche multiplication in the space charge region and in our case is extended with a consideration of p-n junctions with a high concentration of the deep levels. It is shown that the efficient trapping of free carriers from the bulk generation current to the deep levels of radiation induced defects leads to the stabilization of the irradiated detector operation in avalanche multiplication mode due to the reduction of the electric field at the junction. The charge collection efficiency and the detector reverse current dependences on the applied bias have been numerically simulated in this study and they well correlate to the recent experimental results of CERN RD50 collaboration. The developed model of enhanced collected charge predicts a controllable operation of heavily irradiated detectors that is promising for the detector application in the upcoming experiments in a high luminosity collider.

  6. Annealing studies of silicon microstrip detectors irradiated at high neutron fluences

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Balbuena, J. P.; García, C.; González, S.; Lacasta, C.; Lacuesta, V.; Lozano, M.; Martí i Garcia, S.; Pellegrini, G.; Ullán, M.

    2008-06-01

    Silicon p-type detectors are being investigated for the development of radiation-tolerant detectors for the luminosity upgrade of the CERN large hadron collider (Super-LHC (sLHC)). Microstrip detectors have been fabricated by CNM-IMB with an n-side read-out on p-type high-resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The irradiation fluxes match with the expected doses for the inner tracker at the sLHC (up to 10 16 equivalent 1 MeV neutrons cm -2). The macroscopic properties of the irradiated prototypes after irradiation were characterized at the IFIC-Valencia laboratory. The charge collection studies were carried out by means of a radioactive source setup as well as by an infrared laser illumination. The annealing behavior was studied in detail on a microstrip detector irradiated with a flux of 10 15 equivalent 1 MeV neutrons cm -2. Collected charge measurements were made after accelerated annealing times at 80 °C up to an equivalent annealing time of several years at room temperature. This note reports on the recorded results from the annealing of the irradiated p-type microstrip sensor.

  7. A new detector for mass spectrometry: Direct detection of low energy ions using a multi-pixel photon counter

    SciTech Connect

    Wilman, Edward S.; Gardiner, Sara H.; Vallance, Claire; Nomerotski, Andrei; Turchetta, Renato; Brouard, Mark

    2012-01-15

    A new type of ion detector for mass spectrometry and general detection of low energy ions is presented. The detector consists of a scintillator optically coupled to a single-photon avalanche photodiode (SPAD) array. A prototype sensor has been constructed from a LYSO (Lu{sub 1.8}Y{sub 0.2}SiO{sub 5}(Ce)) scintillator crystal coupled to a commercial SPAD array detector. As proof of concept, the detector is used to record the time-of-flight mass spectra of butanone and carbon disulphide, and the dependence of detection sensitivity on the ion kinetic energy is characterised.

  8. A TCT and annealing study on Magnetic Czochralski silicon detectors irradiated with neutrons and 24 GeV/ c protons

    NASA Astrophysics Data System (ADS)

    Pacifico, Nicola; Creanza, Donato; de Palma, Mauro; Manna, Norman; Kramberger, Gregor; Moll, Michael

    2010-01-01

    Silicon diodes (pad detectors) were irradiated with 24 GeV/ c protons at the CERN PS IRRAD1 facility and with neutrons at the TRIGA reactor in Ljubljana (Slovenia). The diodes were realized on Magnetic Czochralski (MCz) grown silicon, of both n- and p-type. After irradiation, an annealing study with CV measurements was performed on 24 GeV/ c proton irradiated detectors, looking for hints of type inversion after irradiation and during annealing. Other pad detectors were studied using the TCT (transient current technique), to gather information about the field profile in the detector bulk and thus about the effective space charge distribution within it.

  9. Quality control of the TSV multi-pixel photon counter arrays, and modules for the external plate of EndoTOF-PET ultrasound detector

    NASA Astrophysics Data System (ADS)

    Liu, Z.; Doroud, K.; Auffray, E.; Ben Mimoun Bel Hadj, F.; Cortinovis, D.; Garutti, E.; Lecoq, P.; Paganoni, M.; Pizzichemi, M.; Silenzi, A.; Xu, C.; Zvolsky, M.

    2015-07-01

    The aim of the EndoTOFPET-US collaboration is to develop a multi-modal imaging tool combining ultrasound with time-of-flight positron emission tomography into an endoscopic imaging device. One of the objectives of this scanner is to reach a coincidence time resolution of 200 ps full width at half maximum. The external detector is constructed with 256 matrices of 4×4 lutetium-yttrium oxyorthosilicate scintillating crystals, each with a size of 3.5 × 3.5 × 15mm3, coupled to 256 Hamamatsu TSV multi-pixel photon counter arrays (S12643-050CN). A full characterisation of these arrays has been performed in order to assure the quality of the arrays prior to the gluing to the crystal matrices. The breakdown voltage, dark count rate and single photon time resolution have been measured both at DESY and CERN. After this characterisation, the crystal matrices were glued to the multi-pixel photon counter arrays. The coincidence time resolution of each module has been measured at CERN using an ultra-fast amplifier-discriminator as the reference readout ASIC. Results of the characterisation of multi-pixel photon counter arrays and the crystal modules are presented here.

  10. Commissioning of the read-out driver (ROD) card for the ATLAS IBL detector and upgrade studies for the pixel Layers 1 and 2

    NASA Astrophysics Data System (ADS)

    Balbi, G.; Bindi, M.; Falchieri, D.; Gabrielli, A.; Travaglini, R.; Chen, S.-P.; Hsu, S.-C.; Hauck, S.; Kugel, A.

    2014-11-01

    The higher luminosity that is expected for the LHC after future upgrades will require better performance by the data acquisition system, especially in terms of throughput. In particular, during the first shutdown of the LHC collider in 2013/14, the ATLAS Pixel Detector will be equipped with a fourth layer - the Insertable B-Layer or IBL - located at a radius smaller than the present three layers. Consequently, a new front end ASIC (FE-I4) was designed as well as a new off-detector chain. The latter is composed mainly of two 9U-VME cards called the Back-Of-Crate (BOC) and Read-Out Driver (ROD). The ROD is used for data and event formatting and for configuration and control of the overall read-out electronics. After some prototyping samples were completed, a pre-production batch of 5 ROD cards was delivered with the final layout. Actual production of another 15 ROD cards is ongoing in Fall 2013, and commissioning is scheduled in 2014. Altogether 14 cards are necessary for the 14 staves of the IBL detector, one additional card is required by the Diamond Beam Monitor (DBM), and additional spare ROD cards will be produced for a total of 20 boards. This paper describes some integration tests that were performed and our plan to test the production of the ROD cards. Slices of the IBL read-out chain have been instrumented, and ROD performance is verified on a test bench mimicking a small-sized final setup. This contribution will report also one view on the possible adoption of the IBL ROD for ATLAS Pixel Detector Layer 2 (firstly) and, possibly, in the future, for Layer 1.

  11. Liquid-xenon detector under the intensive pulse irradiation conditions

    NASA Astrophysics Data System (ADS)

    Kirsanov, M. A.

    2016-02-01

    The effect of intense pulsed irradiation on the operation of the liquid xenon spectrometer was studied. The ionization chamber filled with liquid xenon was irradiated by bremsstrahlung pulses of the microtron. The pulse repetition rate was 400 Hz. The absorbed dose ranged from 10-7 to 0.1 Gy per pulse. Stable operation of the liquid xenon spectrometer in the intervals between the pulses of the accelerator was shown for a long time.

  12. Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Hu, W. D.; Chen, X. S.; Ye, Z. H.; Chen, Y. G.; Yin, F.; Zhang, B.; Lu, W.

    2012-10-01

    In this paper, experimental results of polarity inversion and coupling of laser beam induced current for As-doped long-wavelength HgCdTe pixel arrays grown on CdZnTe are reported. Models for the p-n junction transformation are proposed and demonstrated using numerical simulations. Simulation results are shown to be in agreement with the experimental results. It is found that the deep traps induced by ion implantation are very sensitive to temperature, resulting in a decrease of the quasi Fermi level in the implantation region in comparison to that in the Hg interstitials diffusion and As-doped regions. The Hg interstitial diffusion, As-doping amphoteric behavior, ion implantation damage traps, and the mixed conduction, are key factors for inducing the polarity reversion, coupling, and junction broadening at different temperatures. The results provide the near room-temperature HgCdTe photovoltaic detector with a reliable reference on the junction reversion and broadening around implanted regions, as well as controlling the n-on-p junction for very long wavelength HgCdTe infrared detector pixels.

  13. Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Qiao, H.; Hu, W. D.; Li, T.; Li, X. Y.; Chang, Y.

    2016-09-01

    The study of electrical characteristics of mid-wavelength HgCdTe photodiodes irradiated by steady-state gamma rays has been carried out. The measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance R 0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. The irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. Another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. The influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of HgCdTe photodiodes, and it was found that R 0 for the hydrogenated devices showed similar change to those without hydrogenation. The series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 Mrad(Si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation.

  14. Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation

    NASA Astrophysics Data System (ADS)

    Qiao, H.; Hu, W. D.; Li, T.; Li, X. Y.; Chang, Y.

    2016-03-01

    The study of electrical characteristics of mid-wavelength HgCdTe photodiodes irradiated by steady-state gamma rays has been carried out. The measurement of the current-voltage curves during irradiation revealed an abnormal variation of zero biased resistance R 0, and it didn't tend to change monotonically as observed in the case of post irradiation measurement. The irradiation effect was dominated by bulk effect inferred from the fitting calculations, and the generation-recombination current in the depletion region was drastically affected by gamma irradiation. Another irradiation effect was the linear increase of the series resistance with irradiation dosage which was related with the change of transportation parameters of carriers. The influence of hydrogenation on the gamma irradiation effects was also studied for comparison with the same batch of HgCdTe photodiodes, and it was found that R 0 for the hydrogenated devices showed similar change to those without hydrogenation. The series resistance, however, gave a totally different irradiation effect from the non-hydrogenated detectors and showed little change up to nearly 1 Mrad(Si) of gamma irradiation, which may be explained by the annihilation of hydrogen radicals with the defects caused by gamma irradiation.

  15. Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors.

    PubMed

    Amendolia, S R; Bisogni, M G; Delogu, P; Fantacci, M E; Paternoster, G; Rosso, V; Stefanini, A

    2009-04-01

    The authors report on the imaging capabilities of a mammographic system demonstrator based on GaAs pixel detectors operating in single photon counting (SPC) mode. The system imaging performances have been assessed by means of the transfer functions: The modulation transfer function (MTF), the normalized noise power spectrum, and the detective quantum efficiency (DQE) have been measured following the guidelines of the IEC 62220-1-2 protocol. The transfer function analysis has shown the high spatial resolution capabilities of the GaAs detectors. The MTF calculated at the Nyquist frequency (2.94 cycles/mm) is indeed 60%. The DQE, measured with a standard mammographic beam setup (Mo/Mo, 28 kVp, with 4 mm Al added filter) and calculated at zero frequency, is 46%. Aiming to further improve the system's image quality, the authors investigate the DQE limiting factors and show that they are mainly related to system engineering. For example, the authors show that optimization of the image equalization procedure increases the DQE(0) up to 74%, which is better than the DQE(0) of most clinical mammographic systems. The authors show how the high detection efficiency of GaAs detectors and the noise discrimination associated with the SPC technology allow optimizing the image quality in mammography. In conclusion, the authors propose technological solutions to exploit to the utmost the potentiality of GaAs detectors coupled to SPC electronics. PMID:19472640

  16. Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors

    SciTech Connect

    Amendolia, S. R.; Bisogni, M. G.; Delogu, P.; Fantacci, M. E.; Paternoster, G.; Rosso, V.; Stefanini, A.

    2009-04-15

    The authors report on the imaging capabilities of a mammographic system demonstrator based on GaAs pixel detectors operating in single photon counting (SPC) mode. The system imaging performances have been assessed by means of the transfer functions: The modulation transfer function (MTF), the normalized noise power spectrum, and the detective quantum efficiency (DQE) have been measured following the guidelines of the IEC 62220-1-2 protocol. The transfer function analysis has shown the high spatial resolution capabilities of the GaAs detectors. The MTF calculated at the Nyquist frequency (2.94 cycles/mm) is indeed 60%. The DQE, measured with a standard mammographic beam setup (Mo/Mo, 28 kVp, with 4 mm Al added filter) and calculated at zero frequency, is 46%. Aiming to further improve the system's image quality, the authors investigate the DQE limiting factors and show that they are mainly related to system engineering. For example, the authors show that optimization of the image equalization procedure increases the DQE(0) up to 74%, which is better than the DQE(0) of most clinical mammographic systems. The authors show how the high detection efficiency of GaAs detectors and the noise discrimination associated with the SPC technology allow optimizing the image quality in mammography. In conclusion, the authors propose technological solutions to exploit to the utmost the potentiality of GaAs detectors coupled to SPC electronics.

  17. Design and characterization of the ePix10k: a high dynamic range integrating pixel ASIC for LCLS detectors

    NASA Astrophysics Data System (ADS)

    Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

    2015-05-01

    ePix10k is a variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. The ASIC is optimized for high dynamic range application requiring high spatial resolution and fast frame rates. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix10k variant has 100um×100um pixels arranged in a 176×192 matrix, a resolution of 140e- r.m.s. and a signal range of 3.5pC (10k photons at 8keV). In its final version it will be able to sustain a frame rate of 2kHz. A first prototype has been fabricated and characterized. Performance in terms of noise, linearity, uniformity, cross-talk, together with preliminary measurements with bump bonded sensors are reported here.

  18. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  19. GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array

    NASA Astrophysics Data System (ADS)

    Campbell, M.; Heijne, E. H. M.; Llopart, X.; Colas, P.; Giganon, A.; Giomataris, Y.; Chefdeville, M.; Colijn, A. P.; Fornaini, A.; van der Graaf, H.; Kluit, P.; Timmermans, J.; Visschers, J. L.; Schmitz, J.

    2006-05-01

    A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed 50 μm above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as δ-rays. With a gas layer thickness of only 1 mm, the device could be applied as vertex detector, outperforming all Si-based detectors.

  20. Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

    NASA Astrophysics Data System (ADS)

    Al-Jobouri, Hussain A.; Rajab, Mustafa Y.

    2016-03-01

    CR-39 detector which covered with boric acid (H3Bo3) pellet was irradiated by thermal neutrons from (241Am - 9Be) source with activity 12Ci and neutron flux 105 n. cm-2. s-1. The irradiation times -TD for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C˚ temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLAB software were analyzed and found the following relationships: (a) The irradiation time -TD has behavior linear relationships with following nuclear track parameters: i) total track number - NT ii) maximum track number - MRD (relative to track diameter - DT) at response region range 2.5 µm to 4 µm iii) maximum track number - MD (without depending on track diameter - DT). (b) The irradiation time -TD has behavior logarithmic relationship with maximum track number - MA (without depending on track area - AT). The image processing technique principally track diameter - DT can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.

  1. Charge collection and charge pulse formation in highly irradiated silicon planar detectors

    SciTech Connect

    Dezillie, B.; Li, Z.; Eremin, V.

    1998-06-01

    The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V{sub fd}), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V{sub fd}*, which is the full depletion voltage traditionally determined by the extrapolation of the fast comopnent amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V{sub fd}) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V{sub fd} for highly irradiated detectors.

  2. Study of anomalous charge collection efficiency in heavily irradiated silicon strip detectors

    NASA Astrophysics Data System (ADS)

    Mikuž, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Zavrtanik, M.

    2011-04-01

    Anomalous charge collection efficiency observed in heavily irradiated silicon strip detectors operated at high bias voltages has been studied in terms of a simple model and experimentally using 25 ns shaping electronics and transient current technique (TCT) with edge-on laser injection. The model confirmed qualitatively the explanation by electron impact ionization in the high electric field close to the strips, but failed in the quantitative description of the collected charge. First results on a Hamamatsu strip detector irradiated to 5×1015 neq/cm2 and operated at bias voltages in excess of 1000 V exhibit charge collection similar to what obtained on Micron devices. TCT tests with local charge injection by a laser confirm the validity of a linear extrapolation of trapping to very high fluences and reveal significant charge collection from the non-depleted volume of the detector.

  3. Towards a 10 μs, thin and high resolution pixelated CMOS sensor system for future vertex detectors

    NASA Astrophysics Data System (ADS)

    De Masi, R.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Degerli, Y.; Deveaux, M.; Dorokhov, A.; Doziére, G.; Dulinski, W.; Gelin, M.; Goffe, M.; Fontaine, J. C.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Voutsinas, G.; Wagner, F. M.; Winter, M.

    2011-02-01

    The physics goals of many high energy experiments require a precise determination of decay vertices, imposing severe constraints on vertex detectors (readout speed, granularity, material budget,…). The IPHC-IRFU collaboration developed a sensor architecture to comply with these requirements. The first full scale CMOS sensor was realised and equips the reference planes of the EUDET beam telescope. Its architecture is being adapted to the needs of the STAR (RHIC) and CBM (FAIR) experiments. It is a promising candidate for the ILC experiments and the ALICE detector upgrade (LHC). A substantial improvement to the CMOS sensor performances, especially in terms of radiation hardness, should come from a new fabrication technology with depleted sensitive volume. A prototype sensor was fabricated to explore the benefits of the technology. The crucial system integration issue is also currently being addressed. In 2009 the PLUME collaboration was set up to investigate the feasibility and performances of a light double sided ladder equipped with CMOS sensors, aimed primarily for the ILC vertex detector but also of interest for other applications such as the CBM vertex detector.

  4. Studies for a 10 μs, thin, high resolution CMOS pixel sensor for future vertex detectors

    NASA Astrophysics Data System (ADS)

    Voutsinas, G.; Amar-Youcef, S.; Baudot, J.; Bertolone, G.; Brogna, A.; Chon-Sen, N.; Claus, G.; Colledani, C.; Dorokhov, A.; Dozière, G.; Dulinski, W.; Degerli, Y.; De Masi, R.; Deveaux, M.; Gelin, M.; Goffe, M.; Hu-Guo, Ch.; Himmi, A.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Müntz, C.; Orsini, F.; Santos, C.; Schrader, C.; Specht, M.; Stroth, J.; Valin, I.; Wagner, F. M.; Winter, M.

    2011-06-01

    Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time. The development of CMOS sensors for HEP applications was initiated at IPHC Strasbourg more than 10 years ago, motivated by the needs for vertex detectors at the International Linear Collider (ILC) [R. Turchetta et al, NIM A 458 (2001) 677]. Since then several other applications emerged. The first real scale digital CMOS sensor MIMOSA26 equips Flavour Tracker at RHIC, as well as for the microvertex detector of the CBM experiment at FAIR. MIMOSA sensors may also offer attractive performances for the ALICE upgrade at LHC. This paper will demonstrate the substantial performance improvement of CMOS sensors based on a high resistivity epitaxial layer. First studies for integrating the sensors into a detector system will be addressed and finally the way to go to a 10 μs readout sensor will be discussed.

  5. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  6. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Accorsi, R.; Autiero, M.; Celentano, L.; Chmeissani, M.; Cozzolino, R.; Curion, A. S.; Frallicciardi, P.; Laccetti, P.; Lanza, R. C.; Lauria, A.; Maiorino, M.; Marotta, M.; Mettivier, G.; Montesi, M. C.; Riccio, P.; Roberti, G.; Russo, P.

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256×256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  7. Measurement of X-ray spectra using a Lu2(SiO4)O-multipixel-photon detector with changes in the pixel number.

    PubMed

    Yamaguchi, Satoshi; Sato, Eiichi; Oda, Yasuyuki; Nakamura, Ryuji; Oikawa, Hirobumi; Yabuushi, Tomonori; Ariga, Hisanori; Ehara, Shigeru

    2015-09-01

    To measure X-ray spectra with high count rates, we developed a detector consisting of a Lu2(SiO4)O [LSO] crystal with a decay time of 40 ns and a multipixel photon counter (MPPC). The photocurrents flowing through the MPPC are converted into voltages and amplified by a high-speed current-voltage amplifier, and event pulses from the amplifier are sent to a multichannel analyzer to measure spectra. We used three MPPCs of 100, 400 and 1600 pixels/mm(2), and the MPPCs were driven under pre-Geiger mode at a temperature of 20 °C. At a tube voltage of 100 kV and a tube current of 5.0 μA, the maximum count rate was 12.8 kilo-counts per second. The event-pulse widths were 200 ns, and the energy resolution was 53% at 59.5 keV using a 100-pixel MPPC. PMID:26046520

  8. A 4096-pixel MAPS detector used to investigate the single-electron distribution in a Young-Feynman two-slit interference experiment

    NASA Astrophysics Data System (ADS)

    Gabrielli, A.; Giorgi, F. M.; Semprini, N.; Villa, M.; Zoccoli, A.; Matteucci, G.; Pozzi, G.; Frabboni, S.; Gazzadi, G. C.

    2013-01-01

    A monolithic CMOS detector, made of 4096 active pixels developed for HEP collider experiments, has been used in the Young-Feynman two-slit experiment with single electrons. The experiment has been carried out by inserting two nanometric slits in a transmission electron microscope that provided the electron beam source and the electro-optical lenses for projecting and focusing the interference pattern on the sensor. The fast readout of the sensor, in principle capable to manage up to 106 frames per second, allowed to record single-electron frames spaced by several empty frames. In this way, for the first time in a single-electron two-slit experiment, the time distribution of electron arrivals has been measured with a resolution of 165 μs. In addition, high statistics samples of single-electron events were collected within a time interval short enough to be compatible with the stability of the system and coherence conditions of the illumination.

  9. Recent T980 Crystal Collimation Studies at the Tevatron Exploiting a Pixel Detector System and a Multi-Strip Crystal Array

    SciTech Connect

    Still, D.; Annala, G.E.; Carrigan, R.A.; Drozhdin, A.I.; Johnson, T.R.; Mokhov, N.V.; Previtali, V.; Rivera, R.; Shiltsev, V.; Zagel, J.; Zvoda, V.V.; / /CERN /INFN, Pisa / /

    2012-05-15

    With the shutdown of the Tevatron, the T-980 crystal collimation experiment at Fermilab has been successfully completed. Results of dedicated beam studies in May 2011 are described in this paper. For these studies, two multi-strip crystals were installed in the vertical goniometer and an O-shaped crystal installed in a horizontal goniometer. A two-plane CMS pixel detector was also installed in order to enhance the experiment with the capability to image the profile of crystal channeled or multiple volume reflected beam. The experiment successfully imaged channeled beam from a crystal for 980-GeV protons for the first time. This new enhanced hardware yielded impressive results. The performance and characterization of the crystals studied have been very reproducible over time and consistent with simulations.

  10. First use of a high-sensitivity active pixel sensor array as a detector for electron microscopy

    NASA Astrophysics Data System (ADS)

    Xuong, Nguyen-Huu; Milazzo, Anna-Clare; LeBlanc, Philippe; Duttweiler, Fred; Bouwer, James; Peltier, Steve; Ellisman, Mark; Denes, Peter; Bieser, Fred; Matis, Howard S.; Wieman, Howard; Kleinfelder, Stuart

    2004-06-01

    There is an urgent need to replace film and CCD cameras as recording instruments for transmission electron microscopy (TEM). Film is too cumbersome to process and CCD cameras have low resolution, marginal to poor signal-to-noise ratio for single electron detection and high spatial distortion. To find a replacement device, we have tested a high sensitivity active pixel sensor (APS) array currently being developed for nuclear physics. The tests were done at 120 keV in a JEOL 1200 electron microscope. At this energy, each electron produced on average a signal-tonoise ratio about 20/1. The spatial resolution was also excellent with the full width at half maximum (FWHM) about 20 microns. Since it is very radiation tolerant and has almost no spatial distortion, the above tests showed that a high sensitivity CMOS APS array holds great promise as a direct detection device for electron microscopy.

  11. PIXEL 2010 - A Résumé

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2011-09-01

    The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started showing their capabilities. X-ray imaging detectors, also using the hybrid pixel technology, have greatly advanced the experimental possibilities for diffraction experiments. Monolithic or semi-monolithic devices like CMOS active pixels and DEPFET pixels have now reached a state such that complete vertex detectors for RHIC and superKEKB are being built with these technologies. Finally, new advances towards fully monolithic active pixel detectors, featuring full CMOS electronics merged with efficient signal charge collection, exploiting standard CMOS technologies, SOI and/or 3D integration, show the path for the future. This résumé attempts to extract the main statements of the results and developments presented at this conference.

  12. High density pixel array

    NASA Technical Reports Server (NTRS)

    Wiener-Avnear, Eliezer (Inventor); McFall, James Earl (Inventor)

    2004-01-01

    A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

  13. Note: Application of a pixel-array area detector to simultaneous single crystal x-ray diffraction and x-ray absorption spectroscopy measurements

    SciTech Connect

    Sun, Cheng-Jun Brewe, Dale L.; Heald, Steve M.; Zhang, Bangmin; Chen, Jing-Sheng; Chow, G. M.; Venkatesan, T.

    2014-04-15

    X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) are two main x-ray techniques in synchrotron radiation facilities. In this Note, we present an experimental setup capable of performing simultaneous XRD and XAS measurements by the application of a pixel-array area detector. For XRD, the momentum transfer in specular diffraction was measured by scanning the X-ray energy with fixed incoming and outgoing x-ray angles. By selecting a small fixed region of the detector to collect the XRD signal, the rest of the area was available for collecting the x-ray fluorescence for XAS measurements. The simultaneous measurement of XRD and X-ray absorption near edge structure for Pr{sub 0.67}Sr{sub 0.33}MnO{sub 3} film was demonstrated as a proof of principle for future time-resolved pump-probe measurements. A static sample makes it easy to maintain an accurate overlap of the X-ray spot and laser pump beam.

  14. High-flux ptychographic imaging using the new 55 µm-pixel detector ‘Lambda’ based on the Medipix3 readout chip

    SciTech Connect

    Wilke, R. N. Wallentin, J.; Osterhoff, M.; Pennicard, D.; Zozulya, A.; Sprung, M.; Salditt, T.

    2014-11-01

    The Large Area Medipix-Based Detector Array (Lambda) has been used in a ptychographic imaging experiment on solar-cell nanowires. By using a semi-transparent central stop, the high flux density provided by nano-focusing Kirkpatrick–Baez mirrors can be fully exploited for high-resolution phase reconstructions. Suitable detection systems that are capable of recording high photon count rates with single-photon detection are instrumental for coherent X-ray imaging. The new single-photon-counting pixel detector ‘Lambda’ has been tested in a ptychographic imaging experiment on solar-cell nanowires using Kirkpatrick–Baez-focused 13.8 keV X-rays. Taking advantage of the high count rate of the Lambda and dynamic range expansion by the semi-transparent central stop, a high-dynamic-range diffraction signal covering more than seven orders of magnitude has been recorded, which corresponds to a photon flux density of about 10{sup 5} photons nm{sup −2} s{sup −1} or a flux of ∼10{sup 10} photons s{sup −1} on the sample. By comparison with data taken without the semi-transparent central stop, an increase in resolution by a factor of 3–4 is determined: from about 125 nm to about 38 nm for the nanowire and from about 83 nm to about 21 nm for the illuminating wavefield.

  15. Quantum dosimetry and online visualization of X-ray and charged particle radiation in commercial aircraft at operational flight altitudes with the pixel detector Timepix

    NASA Astrophysics Data System (ADS)

    Granja, Carlos; Pospisil, Stanislav

    2014-07-01

    We investigate the application of the hybrid semiconductor pixel detector Timepix for precise characterization, quantum sensitivity dosimetry and visualization of the charged particle radiation and X-ray field inside commercial aircraft at operational flight altitudes. The quantum counting capability and granularity of Timepix provides the composition and spectral-characteristics of the X-ray and charged-particle field with high sensitivity, wide dynamic range, high spatial resolution and particle type resolving power. For energetic charged particles the direction of trajectory and linear energy transfer can be measured. The detector is operated by the integrated readout interface FITPix for power, control and data acquisition together with the software package Pixelman for online visualization and real-time data processing. The compact and portable radiation camera can be deployed remotely being controlled simply by a laptop computer. The device performs continuous monitoring and accurate time-dependent measurements in wide dynamic range of particle fluxes, deposited energy, absorbed dose and equivalent dose rates. Results are presented for in-flight measurements at altitudes up to 12 km in various flights selected in the period 2006-2013.

  16. Phase unwrapping in spectral X-ray differential phase-contrast imaging with an energy-resolving photon-counting pixel detector.

    PubMed

    Epple, Franz M; Ehn, Sebastian; Thibault, Pierre; Koehler, Thomas; Potdevin, Guillaume; Herzen, Julia; Pennicard, David; Graafsma, Heinz; Noël, Peter B; Pfeiffer, Franz

    2015-03-01

    Grating-based differential phase-contrast imaging has proven to be feasible with conventional X-ray sources. The polychromatic spectrum generally limits the performance of the interferometer but benefit can be gained with an energy-sensitive detector. In the presented work, we employ the energy-discrimination capability to correct for phase-wrapping artefacts. We propose to use the phase shifts, which are measured in distinct energy bins, to estimate the optimal phase shift in the sense of maximum likelihood. We demonstrate that our method is able to correct for phase-wrapping artefacts, to improve the contrast-to-noise ratio and to reduce beam hardening due to the modelled energy dependency. The method is evaluated on experimental data which are measured with a laboratory Talbot-Lau interferometer equipped with a conventional polychromatic X-ray source and an energy-sensitive photon-counting pixel detector. Our work shows, that spectral imaging is an important step to move differential phase-contrast imaging closer to pre-clinical and clinical applications, where phase wrapping is particularly problematic. PMID:25163054

  17. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    NASA Astrophysics Data System (ADS)

    Feigl, S.

    2014-03-01

    In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given.

  18. Irradiation tests of prototype self-powered gamma and neutron detectors

    SciTech Connect

    Vermeeren, L.; Carcreff, H.

    2011-07-01

    In the framework of the SCK.CEN-CEA Joint Instrumentation Laboratory, we are developing and optimizing a self-powered detector for selective in-core monitoring of the gamma field. Several prototypes with bismuth emitters were developed and tested in a pure gamma field (the PAGURE gamma irradiation facility at CEA) and in mixed neutron and gamma fields (in the OSIRIS reactor at CEA and in the BR2 reactor at SCK.CEN). Detailed MCNP modelling was performed to calculate the gamma and neutron sensitivities. Apart from a few failing prototypes, all detectors showed equilibrium signals proportional to the gamma field with a good long-term stability (under irradiation during several weeks). A tubular geometry design was finally selected as the most appropriate for in-core gamma detection, coupling a larger sensitivity with better response characteristics. In the same experiment in BR2 six prototype Self-Powered Neutron Detectors (SPNDs) with continuous sheaths (i.e. without any weld between the sensitive part and the cable) were extensively tested: two SPNDs with Co emitter, two with V emitter and two with Rh emitters, with varying geometries. All detector responses were verified to be proportional to the reactor power. The prompt and delayed response contributions were quantified. The signal contributions due to the impact of gamma rays were experimentally determined. The evolution of the signals was continuously followed during the full irradiation period. The signal-to-noise level was observed to be well below 1% in typical irradiation conditions. The absolute neutron and gamma responses for all SPNDs are consistent. (authors)

  19. Segmented Ge detector rejection of internal beta activity produced by neutron irradiation

    NASA Technical Reports Server (NTRS)

    Varnell, L. S.; Callas, J. L.; Mahoney, W. A.; Pehl, R. H.; Landis, D. A.

    1991-01-01

    Future Ge spectrometers flown in space to observe cosmic gamma-ray sources will incorporate segmented detectors to reduce the background from radioactivity produced by energetic particle reactions. To demonstrate the effectiveness of a segmented Ge detector in rejecting background events due to the beta decay of internal radioactivity, a laboratory experiment has been carried out in which radioactivity was produced in the detector by neutron irradiation. A Cf-252 source of neutrons was used to produce, by neutron capture on Ge-74 (36.5 percent of natural Ge) in the detector itself, Ge-75 (t sub 1/2 = 82.78 min), which decays by beta emission with a maximum electron kinetic energy of 1188 keV. By requiring that an ionizing event deposit energy in two or more of the five segments of the detector, each about 1-cm thick, the beta particles, which have a range of about 1-mm, are rejected, while most external gamma rays incident on the detector are counted. Analysis of this experiment indicates that over 85 percent of the beta events from the decay of Ge-75 are rejected, which is in good agreement with Monte Carlo calculations.

  20. Study of pixel damages in CCD cameras irradiated at the neutron tomography facility of IPEN-CNEN/SP

    NASA Astrophysics Data System (ADS)

    Pugliesi, R.; Andrade, M. L. G.; Dias, M. S.; Siqueira, P. T. D.; Pereira, M. A. S.

    2015-12-01

    A methodology to investigate damages in CCD sensors caused by radiation beams of neutron tomography facilities is proposed. This methodology has been developed in the facility installed at the nuclear research reactor of IPEN-CNEN/SP, and the damages were evaluated by counting of white spots in images. The damage production rate at the main camera position was evaluated to be in the range between 0.008 and 0.040 damages per second. For this range, only 4 to 20 CCD pixels are damaged per tomography, assuring high quality images for hundreds of tomographs. Since the present methodology is capable of quantifying the damage production rate for each type of radiation, it can also be used in other facilities to improve the radiation shielding close of the CCD sensors.

  1. Measurement of the Charge Collection Efficiency After Heavy Non-Uniform Irradiation in BABAR Silicon Detectors

    SciTech Connect

    Bettarini, S.; Bondioli, M.; Calderini, G.; Forti, F.; Marchiori, G.; Rizzo, G.; Giorgi, M.A.; Bosisio, L.; Dittongo, S.; Campagnari, C.; /UC, Santa Barbara

    2006-03-01

    We have investigated the depletion voltage changes, leakage current increase and charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BABAR Silicon Vertex Tracker (SVT) after heavy nonuniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 x 10{sup 14} e{sup -}/cm{sup 2}, well beyond the level causing substrate type inversion. We have irradiated the silicon with a nonuniform profile having {sigma} = 1.4 mm that simulates the conditions encountered in the BABAR experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.

  2. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    SciTech Connect

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  3. Modifications induced by gamma irradiation to Makrofol polymer nuclear track detector

    PubMed Central

    Tayel, A.; Zaki, M.F.; El Basaty, A.B.; Hegazy, Tarek M.

    2014-01-01

    The aim of the present study was extended from obtaining information about the interaction of gamma rays with Makrofol DE 7-2 track detector to introduce the basis that can be used in concerning simple sensor for gamma irradiation and bio-engineering applications. Makrofol polymer samples were irradiated with 1.25 MeV 60Co gamma radiations at doses ranging from 20 to 1000 kG y. The modifications of irradiated samples so induced were analyzed using UV–vis spectrometry, photoluminescence spectroscopy, and the measurements of Vickers’ hardness. Moreover, the change in wettability of irradiated Makrofol was investigated by the contact angle determination of the distilled water. UV–vis spectroscopy shows a noticeable decrease in the energy band gap due to gamma irradiation. This decrease could be attributed to the appearance of a shift to UV spectra toward higher wavelength region after irradiation. Photoluminescence spectra reveal a remarkable change in the integrated photoluminescence intensity with increasing gamma doses, which may be resulted from some matrix disorder through the creation of some defected states in the irradiated polymer. The hardness was found to increase from 4.78 MPa for the unirradiated sample to 23.67 MPa for the highest gamma dose. The contact angle investigations show that the wettability of the modified samples increases with increasing the gamma doses. The result obtained from present investigation furnishes evidence that the gamma irradiations are a successful technique to modify the Makrofol DE 7-2 polymer properties to use it in suitable applications. PMID:25750755

  4. Study of the response of PICASSO bubble detectors to neutron irradiation

    NASA Astrophysics Data System (ADS)

    Marlisov, Daniiar

    The objective of this work was to simulate the PICASSO experiment and to study the detector response to neutron irradiation. The results of the simulation show the rock neutron rate to be 1-2 neutrons/day for the setup used until 2009 and less than 0.1 neutrons/day for the setup used after 2010. The shielding efficiency was calculated to be 98% and 99.6% for the two setups respectively. The detector response to an AmBe source was simulated. Neutron rates differ for two AmBe source spectra from the literature. The observed data rate is in agreement with the rate from the simulation. The detector stability was examined and found to be stable. The source position and orientation affect the detector efficiency creating a systematic uncertainity on the order of 10-35%. This uncertainity was eliminated with a source holder. The localisation of recorded events inside the detector and the simulated neutron distribution agree.

  5. Patient dosimetry for total body irradiation using single-use MOSFET detectors.

    PubMed

    Briere, Tina Marie; Tailor, Ramesh; Tolani, Naresh; Prado, Karl; Lane, Richard; Woo, Shiao; Ha, Chul; Gillin, Michael T; Beddar, A Sam

    2008-01-01

    We studied the usefulness of a new type of solid-state detector, the OneDose single-use MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements for total body irradiation (TBI). The factory calibration factors supplied by the manufacturer are applicable to conventional radiotherapy beam arrangements and therefore may not be expected to be valid for TBI dosimetry because of the large field sizes and extended source-to-axis distances used. OneDose detectors were placed under a 1-cm thick bolus at the head, neck, and umbilicus of 9 patients undergoing TBI procedures. Thermoluminescent dosimeters (TLDs) were placed beside the detectors. We found that the OneDose readings differed from the TLD readings by 4.6% at the head, 1.7% at the neck, and 3.9% at the umbilicus, with corresponding standard deviations of 3.9%, 2.2%, and 2.7%. For all patient measurements, 95% of the OneDose readings fell within 3.3% +/- 6.0% of the TLD readings. Anthropomorphic phantom measurements showed differences of -0.1% at the neck and -1.2% midway between the phantom's carina and umbilicus. Our results suggest that these detectors could be used for TBI quality assurance monitoring, although TLDs should remain the standard when critical dose measurements are performed. If OneDose detectors are to be used for TBI, the use of more than one at each location is strongly recommended. Because the detectors are designed for single use, they cannot be individually calibrated. However, to obtain institution-specific correction factors for better applicability to TBI dosimetry, measurements of several detectors taken from a particular lot could also be obtained in phantom with the TBI geometry configurations used for patient treatment. PMID:19020482

  6. Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

    NASA Astrophysics Data System (ADS)

    Miñano, M.; Campabadal, F.; Escobar, C.; García, C.; González, S.; Lacasta, C.; Lozano, M.; Martí i García, S.; Pellegrini, G.; Rafí, J. M.; Ullán, M.

    2007-12-01

    An upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10 35 cm -2 s -1 (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10 16 cm -2 (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported.

  7. The CMS pixel system

    NASA Astrophysics Data System (ADS)

    Bortoletto, Daniela; CMS Collaboration

    2007-09-01

    The CMS hybrid pixel detector is located at the core of the CMS tracker and will contribute significantly to track and vertex reconstruction. The detector is subdivided into a three-layer barrel, and two end-cap disks on either side of the interaction region. The system operating in the 25-ns beam crossing time of the LHC must be radiation hard, low mass, and robust. The construction of the barrel modules and the forward disks has started after extensive R&D. The status of the project is reported.

  8. PIXEL PUSHER

    NASA Technical Reports Server (NTRS)

    Stanfill, D. F.

    1994-01-01

    Pixel Pusher is a Macintosh application used for viewing and performing minor enhancements on imagery. It will read image files in JPL's two primary image formats- VICAR and PDS - as well as the Macintosh PICT format. VICAR (NPO-18076) handles an array of image processing capabilities which may be used for a variety of applications including biomedical image processing, cartography, earth resources, and geological exploration. Pixel Pusher can also import VICAR format color lookup tables for viewing images in pseudocolor (256 colors). This program currently supports only eight bit images but will work on monitors with any number of colors. Arbitrarily large image files may be viewed in a normal Macintosh window. Color and contrast enhancement can be performed with a graphical "stretch" editor (as in contrast stretch). In addition, VICAR images may be saved as Macintosh PICT files for exporting into other Macintosh programs, and individual pixels can be queried to determine their locations and actual data values. Pixel Pusher is written in Symantec's Think C and was developed for use on a Macintosh SE30, LC, or II series computer running System Software 6.0.3 or later and 32 bit QuickDraw. Pixel Pusher will only run on a Macintosh which supports color (whether a color monitor is being used or not). The standard distribution medium for this program is a set of three 3.5 inch Macintosh format diskettes. The program price includes documentation. Pixel Pusher was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Think C is a trademark of Symantec Corporation. Macintosh is a registered trademark of Apple Computer, Inc.

  9. Comparison of Direct Normal Irradiance Derived from Silicon and Thermopile Global Hemispherical Radiation Detectors: Preprint

    SciTech Connect

    Myers, D. R.

    2010-01-01

    Concentrating solar applications utilize direct normal irradiance (DNI) radiation, a measurement rarely available. The solar concentrator industry has begun to deploy numerous measurement stations to prospect for suitable system deployment sites. Rotating shadowband radiometers (RSR) using silicon photodiodes as detectors are typically deployed. This paper compares direct beam estimates from RSR to a total hemispherical measuring radiometer (SPN1) multiple fast thermopiles. These detectors simultaneously measure total and diffuse radiation from which DNI can be computed. Both the SPN1 and RSR-derived DNI are compared to DNI measured with thermopile pyrheliometers. Our comparison shows that the SPN1 radiometer DNI estimated uncertainty is somewhat greater than, and on the same order as, the RSR DNI estimates for DNI magnitudes useful to concentrator technologies.

  10. Irradiation of 4H-SiC UV detectors with heavy ions

    SciTech Connect

    Kalinina, E. V. Lebedev, A. A.; Bogdanova, E.; Berenquier, B.; Ottaviani, L.; Violina, G. N.; Skuratov, V. A.

    2015-04-15

    Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10{sup 9} cm{sup −2}. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.

  11. Imaging properties of pixellated scintillators with deep pixels

    NASA Astrophysics Data System (ADS)

    Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

    2014-09-01

    We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10x10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm x 1mm x 20 mm pixels) made by Proteus, Inc. with similar 10x10 arrays of LSO:Ce and BGO (1mm x 1mm x 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10x10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors.

  12. Imaging properties of pixellated scintillators with deep pixels

    PubMed Central

    Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

    2015-01-01

    We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10×10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm × 1mm × 20 mm pixels) made by Proteus, Inc. with similar 10×10 arrays of LSO:Ce and BGO (1mm × 1mm × 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10×10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors. PMID:26236070

  13. Detective quantum efficiency for photon-counting hybrid pixel detectors in the tender X-ray domain: application to Medipix3RX.

    PubMed

    Rinkel, Jean; Magalhães, Debora; Wagner, Franz; Meneau, Florian; Cesar Vicentin, Flavio

    2016-01-01

    Synchrotron-radiation-based X-ray imaging techniques using tender X-rays are facing a growing demand, in particular to probe the K absorption edges of low-Z elements. Here, a mathematical model has been developed for estimating the detective quantum efficiency (DQE) at zero spatial frequency in the tender X-ray energy range for photon-counting detectors by taking into account the influence of electronic noise. The experiments were carried out with a Medipix3RX ASIC bump-bonded to a 300 µm silicon sensor at the Soft X-ray Spectroscopy beamline (D04A-SXS) of the Brazilian Synchrotron Light Laboratory (LNLS, Campinas, Brazil). The results show that Medipix3RX can be used to develop new imaging modalities in the tender X-ray range for energies down to 2 keV. The efficiency and optimal DQE depend on the energy and flux of the photons. The optimal DQE values were found in the 7.9-8.6 keV photon energy range. The DQE deterioration for higher energies due to the lower absorption efficiency of the sensor and for lower energies due to the electronic noise has been quantified. The DQE for 3 keV photons and 1 × 10(4) photons pixel(-1) s(-1) is similar to that obtained with 19 keV photons. Based on our model, the use of Medipix3RX could be extended down to 2 keV which is crucial for coming applications in imaging techniques at modern synchrotron sources. PMID:26698065

  14. Signal formation and decay in CdTe x-ray detectors under intense irradiation.

    PubMed

    Jahnke, A; Matz, R

    1999-01-01

    The response of Cd(Zn)Te Schottky and resistive detectors to intense x-rays is investigated in a commercial computed tomography (CT) system to assess their potential for medical diagnostics. To describe their signal height, responsivity, signal-to-noise ratio (SNR), and detective quantum efficiency the devices are modeled as solid-state ionization chambers with spatially varying electric field and charge collection efficiency. The thicknesses and pixel areas of the discrete detector elements are 0.5-2 mm and a few mm2, respectively. The incident spectrum extends from 26 to 120 keV and comprises 10(10) quanta/s cm2. It photogenerates a carrier concentration in the semiconductor that is two to three orders of magnitude above the intrinsic concentration, but remains to a similar extent below the charge densities on the device electrodes. Stable linear operation is achieved with the Schottky-type devices under high bias. Their behavior can be modeled well if negatively charged near-midgap bulk defects with a concentration of 10(11)-10(13) cm-3 are assumed. The bulk defects explain the amount and time constant (about 100 ms) of the detrapping current measured after x-ray pulses (afterglow). To avoid screening by the trapped space charge the bias voltage should exceed 100(V) x [detector thickness/mm]2. Dark currents are of the order of the generation-recombination current, i.e., 300 pA/mm3 detector volume. With proper device design the signal height approaches the theoretical maximum of 0.2 A/W. This high responsivity, however, is not exploited in CT since the SNR is determined here by the incident quantum noise. As a consequence of the detrapping current, the response speed does not meet CT requirements. A medium-term effort for crystal growth appears necessary to achieve the required reduction of the trap density by an order of magnitude. Scintillation based detectors are, therefore, still preferred in fast operating medical diagnostic systems. PMID:9949396

  15. The effect of irradiation with high-energy protons on 4H-SiC detectors

    SciTech Connect

    Kazukauskas, V. Jasiulionis, R.; Kalendra, V.; Vaitkus, J.-V.

    2007-03-15

    The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.

  16. Study on the mechanism of a charge-coupled device detector irradiated by millisecond pulse laser under functional loss.

    PubMed

    Li, Mingxin; Jin, Guangyong; Tan, Yong; Guo, Ming; Zhu, Pengbo

    2016-02-20

    The damage mechanism of a CCD detector was studied by building an experimental system containing a millisecond pulse laser irradiating a CCD detector. The experimental results show that the damage on the CCD detector was mainly thermal damage, along with mechanical damage. A melting phenomenon was caused by the thermal damage, so that a crater was observed on the surface of the CCD detector. Caused by melting of the polysilicon electrodes and a temperature rise in the silicon dioxide, the shift register impedance values were sharply reduced. Most of the substrate clock signals were broken and disappeared due to melting of channels in the silicon substrate layer, which caused a functional loss for the CCD detector. The mechanical damage on the melting edge of the CCD detector created heave; the temperature gradient caused this damage. In this paper, the decrease in vertical shift register impedance values was consistent with previous test results. PMID:26906576

  17. Characterizing the response of miniature scintillation detectors when irradiated with proton beams

    PubMed Central

    Archambault, Louis; Polf, Jerimy C.; Beaulieu, Luc; Beddar, Sam

    2014-01-01

    Designing a plastic scintillation detector for proton radiation therapy requires careful consideration. Most plastic scintillators should not perturb a proton beam if they are sufficiently small but may exhibit some energy dependence due to quenching effect. In this work, we studied the factors that would affect the performance of such scintillation detectors. We performed Monte Carlo simulations of proton beams with energies between 50 and 250 MeV to study signal amplitude, water equivalence, spatial resolution, and quenching of light output. Implementation of the quenching effect in the Monte Carlo simulations was then compared with prior experimental data for validation. The signal amplitude of a plastic scintillating fiber detector was on the order of 300 photons per MeV of energy deposited in the detector, corresponding to a power of about 30 pW at a proton dose rate of 100 cGy/min. The signal amplitude could be increased by up to a factor of 2 with reflective coating. We also found that Cerenkov light was not a significant source of noise. Dose deposited in the plastic scintillator was within 2% of the dose deposited in a similar volume of water throughout the whole depth-dose curve for protons with energies higher than 50 MeV. A scintillation detector with a radius of 0.5 mm offers a sufficient spatial resolution for use with a proton beam of 100 MeV or more. The main disadvantage of plastic scintillators when irradiated by protons was the quenching effect, which reduced the amount of scintillation and resulted in dose underestimation by close to 30% at the Bragg peak for beams of 150 MeV or more. However, the level of quenching was nearly constant throughout the proximal half of the depth-dose curve for all proton energies considered. We therefore conclude that it is possible to construct an effective detector to overcome the problems traditionally encountered in proton dosimetry. Scintillation detectors could be used for surface or shallow measurements

  18. The CMS pixel luminosity telescope

    NASA Astrophysics Data System (ADS)

    Kornmayer, A.

    2016-07-01

    The Pixel Luminosity Telescope (PLT) is a new complement to the CMS detector for the LHC Run II data taking period. It consists of eight 3-layer telescopes based on silicon pixel detectors that are placed around the beam pipe on each end of CMS viewing the interaction point at small angle. A fast 3-fold coincidence of the pixel planes in each telescope will provide a bunch-by-bunch measurement of the luminosity. Particle tracking allows collision products to be distinguished from beam background, provides a self-alignment of the detectors, and a continuous in-time monitoring of the efficiency of each telescope plane. The PLT is an independent luminometer, essential to enhance the robustness on the measurement of the delivered luminosity and to reduce its systematic uncertainties. This will allow to determine production cross-sections, and hence couplings, with high precision and to set more stringent limits on new particle production.

  19. Characterisation of radiation field for irradiation of biological samples at nuclear reactor-comparison of twin detector and recombination methods.

    PubMed

    Golnik, N; Gryziński, M A; Kowalska, M; Meronka, K; Tulik, P

    2014-10-01

    Central Laboratory for Radiological Protection is involved in achieving scientific project on biological dosimetry. The project includes irradiation of blood samples in radiation fields of nuclear reactor. A simple facility for irradiation of biological samples has been prepared at horizontal channel of the nuclear reactor MARIA in NCBJ in Poland. The radiation field, composed mainly of gamma radiation and thermal neutrons, has been characterised in terms of tissue kerma using twin-detector technique and recombination chambers. PMID:24366246

  20. Spectrally tunable pixel sensors

    NASA Astrophysics Data System (ADS)

    Langfelder, G.; Buffa, C.; Longoni, A. F.; Zaraga, F.

    2013-01-01

    They are here reported the developments and experimental results of fully operating matrices of spectrally tunable pixels based on the Transverse Field Detector (TFD). Unlike several digital imaging sensors based on color filter arrays or layered junctions, the TFD has the peculiar feature of having electrically tunable spectral sensitivities. In this way the sensor color space is not fixed a priori but can be real-time adjusted, e.g. for a better adaptation to the scene content or for multispectral capture. These advantages come at the cost of an increased complexity both for the photosensitive elements and for the readout electronics. The challenges in the realization of a matrix of TFD pixels are analyzed in this work. First experimental results on an 8x8 (x 3 colors) and on a 64x64 (x 3 colors) matrix will be presented and analyzed in terms of colorimetric and noise performance, and compared to simulation predictions.

  1. Development of radiation hard CMOS active pixel sensors for HL-LHC

    NASA Astrophysics Data System (ADS)

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  2. Development and high temperature testing by 14 MeV neutron irradiation of single crystal diamond detectors

    NASA Astrophysics Data System (ADS)

    Pilotti, R.; Angelone, M.; Pagano, G.; Loreti, S.; Pillon, M.; Sarto, F.; Marinelli, M.; Milani, E.; Prestopino, G.; Verona, C.; Verona-Rinati, G.

    2016-06-01

    In the present paper, the performances of single crystal diamond detectors "ad hoc" designed to operate at high temperature are reported. The detectors were realized using commercial CVD single crystal diamond films, 500 micron thick with metal contacts deposited by sputtering method on each side. The new detector layout is based upon mechanical contacts between the diamond film and the electric ground. The detector was first characterized by measuring the leakage current as function of temperature and applied biasing voltage (I-V characteristics). The results obtained using two different metal contacts, Pt and Ag respectively, while irradiated with 14 MeV neutrons at the Frascati neutron generator (FNG) are reported and compared. It is shown that diamond detectors with Ag metal contacts can be properly operated in spectrometric mode up to 240oC with energy resolution (FWHM) of about 3.5%.

  3. Effets de rayonnement sur les detecteurs au silicium a pixels du detecteur ATLAS

    NASA Astrophysics Data System (ADS)

    Lebel, Celine

    Two detection systems are using pixel silicon detectors in the ATLAS detector: the Pixel, which is the subdetector closest to the interaction point, and the MPX network. The activation of the materials present in the Pixel produced by radiation has been measured in two experiments which we performed at CERF (CERN) and NPI-ASCR (Czech Republic). These experimental studies of activation are compared with GEANT4 simulations. The results of these comparisons show that the simulation can predict the activities with a precision of an order of magnitude. They also show that GEANT4 fails to produce certain radioisotopes seen in the experimental activation studies. The contribution to background and the residual doses due to the desintegration of the radioisotopes produced by fast neutrons (category in which falls the expected average neutron energy of 1 MeV in ATLAS) are extrapolated to ATLAS conditions. It is found that this background in the ATLAS Pixel subdetector will be negligible and that the doses are well below safety concerns for detector manipulation during maintenance and repair periods. The radiation field also inflicts damages to the silicon detectors thus reducing their detection efficiency. A modified Hecht model is presented using an electric field description which includes the double junction effect and a small exponential component in areas usually considered without electric field. This model allows the description of the detection efficiency as a function of applied bias voltage and irradiation fluence for several types of silicon detectors irradiated by particles of different types and energies. On top of validating the Hecht model proposed in this thesis, the studies of the radiation damage on silicon detectors has allowed to conclude that the N1EL hypothesis has to be revised (study with different energies). Using the variation with irradiation fluence of the effective doping concentration and of the leakage current, it is shown that silicon

  4. Complete suppression of reverse annealing of neutron radiation damage during active gamma irradiation in MCZ Si detectors

    NASA Astrophysics Data System (ADS)

    Li, Z.; Verbitskaya, E.; Chen, W.; Eremin, V.; Gul, R.; Härkönen, J.; Hoeferkamp, M.; Kierstead, J.; Metcalfe, J.; Seidel, S.

    2013-01-01

    For the development of radiation-hard Si detectors for the SiD BeamCal (Si Detector Beam Calorimeter) program for International Linear Collider (ILC), n-type Magnetic Czochralski Si detectors have been irradiated first by fast neutrons to fluences of 1.5×1014 and 3×1014 neq/cm2, and then by gamma up to 500 Mrad. The motivation of this mixed radiation project is to test the radiation hardness of MCZ detectors that may utilize the gamma/electron radiation to compensate the negative effects caused by neutron irradiation, all of which exists in the ILC radiation environment. By using the positive space charge created by gamma radiation in MCZ Si detectors, one can cancel the negative space charge created by neutrons, thus reducing the overall net space charge density and therefore the full depletion voltage of the detector. It has been found that gamma radiation has suppressed the room temperature reverse annealing in neutron-irradiated detectors during the 5.5 month of time needed to reach a radiation dose of 500 Mrad. The room temperature annealing (RTA) was verified in control samples (irradiated to the same neutron fluences, but going through this 5.5 month RTA without gamma radiation). This suppression is in agreement with our previous predictions, since negative space charge generated during the reverse annealing was suppressed by positive space charge induced by gamma radiation. The effect is that regardless of the received neutron fluence the reverse annealing is totally suppressed by the same dose of gamma rays (500 Mrad). It has been found that the full depletion voltage for the two detectors irradiated to two different neutron fluences stays the same before and after gamma radiation. Meanwhile, for the control samples also irradiated to two different neutron fluences, full depletion voltages have gone up during this period. The increase in full depletion voltage in the control samples corresponds to the generation of negative space charge, and this

  5. The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors.

    PubMed

    Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

    2016-01-01

    Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

  6. The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

    PubMed Central

    Lutz, Gerhard; Porro, Matteo; Aschauer, Stefan; Wölfel, Stefan; Strüder, Lothar

    2016-01-01

    Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. PMID:27136549

  7. Characterization of the energy resolution and the tracking capabilities of a hybrid pixel detector with CdTe-sensor layer for a possible use in a neutrinoless double beta decay experiment

    NASA Astrophysics Data System (ADS)

    Filipenko, Mykhaylo; Gleixner, Thomas; Anton, Gisela; Durst, Jürgen; Michel, Thilo

    2013-04-01

    Many different experiments are being developed to explore the existence of the neutrinoless double beta decay (0 νββ) since it would imply fundamental consequences for particle physics. In this work we present results on the evaluation of Timepix detectors with cadmium-telluride sensor material to search for 0 νββ in 116Cd. This work was carried out with the COBRA collaboration and the Medipix collaboration. Due to the relatively small pixel dimension of 110×110×1000 μm3 the energy deposited by particles typically extends over several detector pixels leading to a track in the pixel matrix. We investigated the separation power regarding different event-types like α-particles, atmospheric muons, single electrons and electron-positron pairs produced at a single vertex. We achieved excellent classification power for α-particles and muons. In addition, we achieved good separation power between single electron and electron-positron pair production events. These separation abilities indicate a very good background reduction for the 0 νββ search. Further, in order to distinguish between 2 νββ and 0 νββ, the energy resolution is of particular importance. We carried out simulations which demonstrate that an energy resolution of 0.43 % is achievable at the Q-value for 0 νββ of 116Cd at 2.814 MeV. We measured an energy resolution of 1.6 % at a nominal energy of 1589 keV for electron-positron tracks which is about two times worse that predicted by our simulations. This deviation is probably due to the problem of detector calibration at energies above 122 keV which is discussed in this paper as well.

  8. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

  9. Impact of aperturing and pixel size on XPCS using AGIPD

    NASA Astrophysics Data System (ADS)

    Becker, J.; Graafsma, H.

    2012-02-01

    A case study for the Adaptive Gain Integrating Pixel Detector (AGIPD) at the European XFEL employing the intensity autocorrelation technique was performed using the detector simulation tool HORUS. The study compares the AGIPD (pixel size of (200 μm)2) to a possible apertured version of the detector and to a hypothetical system with 100 μm pixel size and investigates the influence of intensity fluctuations and incoherent noise on the quality of the acquired data.

  10. Investigation of X-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma X-ray diagnostics

    NASA Astrophysics Data System (ADS)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.; Rao, C. V. S.; Abhangi, Mitul

    2015-10-01

    This paper describes the fusion-produced neutron irradiation induced changes in the X-ray spectral response of commercially available Passivated Implanted Planar Silicon (PIPS) detectors using the accelerator based D-T generator. After 14.1 MeV neutron irradiation up to a fluence of 3.6× 1010 n/cm2, the energy resolution (i.e. FWHM) of the detectors at room temperature is found to degrade by about 3.8 times that of the pre-irradiated value. From the X-ray spectral characteristics, it has been observed that the room temperature spectral response of PIPS detectors is too poor even at low neutron fluences. Irradiation is also carried out with Am-Be neutron source for studying the effect of scattered neutrons from the reactor walls on the detector performance. Comparative studies of the damage caused by 14.1 MeV neutrons and Am-Be source produced neutrons at the same neutron fluence are carried out by analyzing the irradiated detector characteristics. The degradation in the energy resolution of the detectors is attributed to the radiation induced changes in the detector leakage current. No considerable changes in the full depletion voltage and the effective doping concentration up to the neutron fluence of 3.6× 1010 n/cm2, are observed from the measured C-V characteristics. Partial recovery of the neutron irradiated detector characteristics is discussed.

  11. Stability of the Helical TomoTherapy Hi·Art II detector for treatment beam irradiations.

    PubMed

    Schombourg, Karin; Bochud, François; Moeckli, Raphaël

    2014-01-01

    The Hi·Art II Helical TomoTherapy (HT) unit is equipped with a built-in onboard MVCT detector used for patient imaging and beam monitoring. Our aim was to study the detector stability for treatment beam measurements. We studied the MVCT detector response with the 6 MV photon beam over time, throughout short-term (during an irradiation) and long-term (two times 50 days) periods. Our results show a coefficient of variation ≤ 1% for detector chambers inside the beam (excluding beam gradients) for short- and long-term response of the MVCT detector. Larger variations were observed in beam gradients and an influence of the X-ray target where degradation was found. The results assume that an 'air scan' procedure is performed daily to recalibrate the detector with the imaging beam. On short term, the detector response stability is comparable to other devices. Long-term measure- ments during two 50-day periods show a good reproducibility.  PMID:25493514

  12. Characterization of the ePix100 prototype: a front-end ASIC for second-generation LCLS integrating hybrid pixel detectors

    NASA Astrophysics Data System (ADS)

    Caragiulo, P.; Dragone, A.; Markovic, B.; Herbst, R.; Nishimura, K.; Reese, B.; Herrmann, S.; Hart, P.; Blaj, G.; Segal, J.; Tomada, A.; Hasi, J.; Carini, G.; Kenney, C.; Haller, G.

    2014-09-01

    ePix100 is the first variant of a novel class of integrating pixel ASICs architectures optimized for the processing of signals in second generation LINAC Coherent Light Source (LCLS) X-Ray cameras. ePix100 is optimized for ultra-low noise application requiring high spatial resolution. ePix ASICs are based on a common platform composed of a random access analog matrix of pixel with global shutter, fast parallel column readout, and dedicated sigma-delta analog to digital converters per column. The ePix100 variant has 50μmx50μm pixels arranged in a 352x384 matrix, a resolution of 50e- r.m.s. and a signal range of 35fC (100 photons at 8keV). In its final version it will be able to sustain a frame rate of 1kHz. A first prototype has been fabricated and characterized and the measurement results are reported here.

  13. Pixel Perfect

    SciTech Connect

    Perrine, Kenneth A.; Hopkins, Derek F.; Lamarche, Brian L.; Sowa, Marianne B.

    2005-09-01

    cubic warp. During image acquisitions, the cubic warp is evaluated by way of forward differencing. Unwanted pixelation artifacts are minimized by bilinear sampling. The resulting system is state-of-the-art for biological imaging. Precisely registered images enable the reliable use of FRET techniques. In addition, real-time image processing performance allows computed images to be fed back and displayed to scientists immediately, and the pipelined nature of the FPGA allows additional image processing algorithms to be incorporated into the system without slowing throughput.

  14. Test beam and irradiation test results of Triple-GEM detector prototypes for the upgrade of the muon system of the CMS experiment

    NASA Astrophysics Data System (ADS)

    Vai, I.

    2016-07-01

    The CMS Collaboration is developing GEM detectors for the upgrade of the CMS muon system. Their performance will be presented, analyzing the results of several test beams and an irradiation test performed in the last years.

  15. Photon fluence perturbation correction factors for solid state detectors irradiated in kilovoltage photon beams

    NASA Astrophysics Data System (ADS)

    Mobit, Paul N.; Sandison, George A.; Nahum, Alan E.

    2000-02-01

    Dose perturbation correction factors, gamma (p ), for LiF, CaF2 and Li2 B4 O7 solid state detectors have been determined using the EGS4 Monte Carlo code. Each detector was simulated in the form of a disc of diameter 3.61 mm and thickness 1 mm irradiated in a clinical kilovoltage photon beam at a depth of 1 cm in a water phantom. The perturbation correction factor gamma (p ) is defined as the deviation of the absorbed dose ratio from the average mass energy absorption coefficient ratio of water to the detector material, (mubar en /rho )med,det , which is evaluated assuming that the photon fluence spectrum in the medium and in the detector material are identical. We define another mass energy absorption coefficient ratio, (kappabar en /rho )med,det , which is evaluated using the actual photon fluence spectrum in the medium and detector for LiF and CaF2 rather than assuming they are identical. (kappabar en /rho )med,det predicts the average absorbed dose ratio of the medium to the detector material within 0.3%. When the difference in atomic number between the cavity and the phantom material is large then their photon fluence spectra will differ substantially resulting in a difference between (kappabar en /rho )med,det and (

  16. Novel silicon n-in-p pixel sensors for the future ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    La Rosa, A.; Gallrapp, C.; Macchiolo, A.; Nisius, R.; Pernegger, H.; Richter, R. H.; Weigell, P.

    2013-08-01

    In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10161-MeV neq cm-2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.

  17. Dosimetric Characteristics of a Two-Dimensional Diode Array Detector Irradiated with Passively Scattered Proton Beams

    PubMed Central

    Liengsawangwong, Praimakorn; Sahoo, Nanayan; Ding, Xiaoning; Lii, MingFwu; Gillin, Michale T.; Zhu, Xiaorong Ronald

    2015-01-01

    Purpose: To evaluate the dosimetric characteristics of a two-dimensional (2D) diode array detector irradiated with passively scattered proton beams. Materials and Methods: A diode array detector, MapCHECK (Model 1175, Sun Nuclear, Melbourne, FL, USA) was characterized in passive-scattered proton beams. The relative sensitivity of the diodes and absolute dose calibration were determined using a 250 MeV beam. The pristine Bragg curves (PBCs) measured by MapCHECK diodes were compared with those of an ion chamber using a range shift method. The water-equivalent thickness (WET) of the diode array detector’s intrinsic buildup also was determined. The inverse square dependence, linearity, and other proton dosimetric quantities measured by MapCHECK were also compared with those of the ion chambers. The change in the absolute dose response of the MapCHECK as a function of accumulated radiation dose was used as an indicator of radiation damage to the diodes. 2D dose distribution with and without the compensator were measured and compared with the treatment planning system (TPS) calculations. Results: The WET of the MapCHECK diode’s buildup was determined to be 1.7 cm. The MapCHECK-measured PBC were virtually identical to those measured by a parallel-plate ion chamber for 160, 180, and 250 MeV proton beams. The inverse square results of the MapCHECK were within ±0.4% of the ion chamber results. The linearity of MapCHECK results was within 1% of those from the ion chamber as measured in the range between 10 and 300 MU. All other dosimetric quantities were within 1.3% of the ion chamber results. The 2D dose distributions for non-clinical fields without compensator and the patient treatment fields with the compensator were consistent with the TPS results. The absolute dose response of the MapCHECK was changed by 7.4% after an accumulated dose increased by 170 Gy. Conclusions: The MapCHECK is a convenient and useful tool for 2D dose distribution measurements using passively

  18. Low area 4-bit 5 MS/s flash-type digitizer for hybrid-pixel detectors - Design study in 180 nm and 40 nm CMOS

    NASA Astrophysics Data System (ADS)

    Otfinowski, Piotr; Grybos, Pawel

    2015-11-01

    We report on the design of a 4-bit flash ADC with dynamic offset correction dedicated to measurement systems based on a pixel architecture. The presented converter was manufactured in two CMOS technologies: widespread and economical 180 nm and modern 40 nm process. The designs are optimized for the lowest area occupancy resulting in chip areas of 160×55 μm2 and 35×25 μm2. The experimental results indicate integral nonlinearity of +0.35/-0.21 LSB and +0.28/-0.25 LSB and power consumption of 52 μW and 17 μW at 5 MS/s for the prototypes in 180 nm and 40 nm technologies respectively.

  19. Effects of defect pixel correction algorithms for x-ray detectors on image quality in planar projection and volumetric CT data sets

    NASA Astrophysics Data System (ADS)

    Kuttig, Jan; Steiding, Christian; Hupfer, Martin; Karolczak, Marek; Kolditz, Daniel

    2015-09-01

    In this study we compared various defect pixel correction methods for reducing artifact appearance within projection images used for computed tomography (CT) reconstructions. Defect pixel correction algorithms were examined with respect to their artifact behaviour within planar projection images as well as in volumetric CT reconstructions. We investigated four algorithms: nearest neighbour, linear and adaptive linear interpolation, and a frequency-selective spectral-domain approach. To characterise the quality of each algorithm in planar image data, we inserted line defects of varying widths and orientations into images. The structure preservation of each algorithm was analysed by corrupting and correcting the image of a slit phantom pattern and by evaluating its line spread function (LSF). The noise preservation was assessed by interpolating corrupted flat images and estimating the noise power spectrum (NPS) of the interpolated region. For the volumetric investigations, we examined the structure and noise preservation within a structured aluminium foam, a mid-contrast cone-beam phantom and a homogeneous Polyurethane (PUR) cylinder. The frequency-selective algorithm showed the best structure and noise preservation for planar data of the correction methods tested. For volumetric data it still showed the best noise preservation, whereas the structure preservation was outperformed by the linear interpolation. The frequency-selective spectral-domain approach in the correction of line defects is recommended for planar image data, but its abilities within high-contrast volumes are restricted. In that case, the application of a simple linear interpolation might be the better choice to correct line defects within projection images used for CT.

  20. Pixel multichip module development at Fermilab

    SciTech Connect

    Turqueti, M A; Cardoso, G; Andresen, J; Appel, J A; Christian, D C; Kwan, S W; Prosser, A; Uplegger, L

    2005-10-01

    At Fermilab, there is an ongoing pixel detector R&D effort for High Energy Physics with the objective of developing high performance vertex detectors suitable for the next generation of HEP experiments. The pixel module presented here is a direct result of work undertaken for the canceled BTeV experiment. It is a very mature piece of hardware, having many characteristics of high performance, low mass and radiation hardness driven by the requirements of the BTeV experiment. The detector presented in this paper consists of three basic devices; the readout integrated circuit (IC) FPIX2A [2][5], the pixel sensor (TESLA p-spray) [6] and the high density interconnect (HDI) flex circuit [1][3] that is capable of supporting eight readout ICs. The characterization of the pixel multichip module prototype as well as the baseline design of the eight chip pixel module and its capabilities are presented. These prototypes were characterized for threshold and noise dispersion. The bump-bonds of the pixel module were examined using an X-ray inspection system. Furthermore, the connectivity of the bump-bonds was tested using a radioactive source ({sup 90}Sr), while the absolute calibration of the modules was achieved using an X-ray source. This paper provides a view of the integration of the three components that together comprise the pixel multichip module.

  1. Development of a fast multi-line x-ray CT detector for NDT

    NASA Astrophysics Data System (ADS)

    Hofmann, T.; Nachtrab, F.; Schlechter, T.; Neubauer, H.; Mühlbauer, J.; Schröpfer, S.; Ernst, J.; Firsching, M.; Schweiger, T.; Oberst, M.; Meyer, A.; Uhlmann, N.

    2015-04-01

    Typical X-ray detectors for non-destructive testing (NDT) are line detectors or area detectors, like e.g. flat panel detectors. Multi-line detectors are currently only available in medical Computed Tomography (CT) scanners. Compared to flat panel detectors, line and multi-line detectors can achieve much higher frame rates. This allows time-resolved 3D CT scans of an object under investigation. Also, an improved image quality can be achieved due to reduced scattered radiation from object and detector themselves. Another benefit of line and multi-line detectors is that very wide detectors can be assembled easily, while flat panel detectors are usually limited to an imaging field with a size of approx. 40 × 40 cm2 at maximum. The big disadvantage of line detectors is the limited number of object slices that can be scanned simultaneously. This leads to long scan times for large objects. Volume scans with a multi-line detector are much faster, but with almost similar image quality. Due to the promising properties of multi-line detectors their application outside of medical CT would also be very interesting for NDT. However, medical CT multi-line detectors are optimized for the scanning of human bodies. Many non-medical applications require higher spatial resolutions and/or higher X-ray energies. For those non-medical applications we are developing a fast multi-line X-ray detector.In the scope of this work, we present the current state of the development of the novel detector, which includes several outstanding properties like an adjustable curved design for variable focus-detector-distances, conserving nearly uniform perpendicular irradiation over the entire detector width. Basis of the detector is a specifically designed, radiation hard CMOS imaging sensor with a pixel pitch of 200 μ m. Each pixel has an automatic in-pixel gain adjustment, which allows for both: a very high sensitivity and a wide dynamic range. The final detector is planned to have 256 lines of

  2. High-contrast X-ray radiography using hybrid semiconductor pixel detectors with 1 mm thick Si sensor as a tool for monitoring liquids in natural building stones

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Slavikova, M.; Zemlicka, J.; Jakubek, J.; Kotlik, P.

    2014-07-01

    For the preservation of buildings and other cultural heritage, the application of various conservation products such as consolidants or water repellents is often used. X-ray radiography utilizing semiconductor particle-counting detectors stands out as a promising tool in research of consolidants inside natural building stones. However, a clear visualization of consolidation products is often accomplished by doping with a contrast agent, which presents a limitation. This approach causes a higher attenuation for X-rays, but also alters the penetration ability of the original consolidation product. In this contribution, we focus on the application of Medipix type detectors newly equipped with a 1 mm thick Si sensor. This thicker sensor has enhanced detection efficiency leading to extraordinary sensitivity for monitoring consolidants and liquids in natural building stones even without any contrast agent. Consequently, methods for the direct monitoring of organosilicon consolidants and dynamic visualization of the water uptake in the Opuka stone using high-contrast X-ray radiography are demonstrated. The presented work demonstrates a significant improvement in the monitoring sensitivity of X-ray radiography in stone consolidation studies and also shows advantages of this detector configuration for X-ray radiography in general.

  3. DC-DC powering for the CMS pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, Lutz; Fleck, Martin; Friedrichs, Marcel; Hensch, Richard; Karpinski, Waclaw; Klein, Katja; Rittich, David; Sammet, Jan; Wlochal, Michael

    2013-12-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R&D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to 24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  4. Spitzer Secondary Eclipses of the Dense, Modestly-irradiated, Giant Exoplanet HAT-P-20b Using Pixel-level Decorrelation

    NASA Astrophysics Data System (ADS)

    Deming, Drake; Knutson, Heather; Kammer, Joshua; Fulton, Benjamin J.; Ingalls, James; Carey, Sean; Burrows, Adam; Fortney, Jonathan J.; Todorov, Kamen; Agol, Eric; Cowan, Nicolas; Desert, Jean-Michel; Fraine, Jonathan; Langton, Jonathan; Morley, Caroline; Showman, Adam P.

    2015-06-01

    HAT-P-20b is a giant metal-rich exoplanet orbiting a metal-rich star. We analyze two secondary eclipses of the planet in each of the 3.6 and 4.5 μm bands of Warm Spitzer. We have developed a simple, powerful, and radically different method to correct the intra-pixel effect for Warm Spitzer data, which we call pixel-level decorrelation (PLD). PLD corrects the intra-pixel effect very effectively, but without explicitly using—or even measuring—the fluctuations in the apparent position of the stellar image. We illustrate and validate PLD using synthetic and real data and comparing the results to previous analyses. PLD can significantly reduce or eliminate red noise in Spitzer secondary eclipse photometry, even for eclipses that have proven to be intractable using other methods. Our successful PLD analysis of four HAT-P-20b eclipses shows a best-fit blackbody temperature of 1134 ± 29 K, indicating inefficient longitudinal transfer of heat, but lacking evidence for strong molecular absorption. We find sufficient evidence for variability in the 4.5 μm band that the eclipses should be monitored at that wavelength by Spitzer, and this planet should be a high priority for James Webb Space Telescope spectroscopy. All four eclipses occur about 35 minutes after orbital phase 0.5, indicating a slightly eccentric orbit. A joint fit of the eclipse and transit times with extant RV data yields ecos ω =0.01352-0.00057+0.00054 and establishes the small eccentricity of the orbit to high statistical confidence. HAT-P-20b is another excellent candidate for orbital evolution via Kozai migration or other three-body mechanisms.

  5. Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon X-ray detectors

    NASA Astrophysics Data System (ADS)

    Vigneshwara Raja, P.; Rao, C. V. S.; Narasimha Murty, N. V. L.

    2016-07-01

    This paper describes the gamma irradiation effects on the electrical characteristics of n-type float zone (FZ) silicon detectors by incorporating a 4-level 60Co-gamma radiation damage model in the commercial device simulator for plasma X-ray tomography diagnostics. In the simulations, a segmented n-type silicon detector (i.e. p+-n-n+ structure) is considered with varying substrate resistivity (ρ = 5.4, 2.5, and 0.3 kΩ cm). The simulation results have been validated with the reported experimental measurements carried out on similar device structures. The 60Co-gamma irradiation induced changes in the electrical characteristics of the detectors are analyzed up to the dose of 3500 Mrad. The possible gamma induced degradation in the X-ray response of the detectors is investigated from the changes in the effective doping concentration and the leakage current of the detectors. The survival of the gamma irradiated detectors is predicted from the simulation studies. The comparison between the 60Co-gamma and 14.1 MeV neutron irradiation effects (typical fusion environments) on silicon detectors is attempted.

  6. Development activities of a CdTe/CdZnTe pixel detector for gamma-ray spectrometry with imaging and polarimetry capability in astrophysics

    NASA Astrophysics Data System (ADS)

    Gálvez, J. L.; Hernanz, M.; Álvarez, J. M.; Álvarez, L.; La Torre, M.; Caroli, E.; Lozano, M.; Pellegrini, G.; Ullán, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2013-05-01

    In the last few years we have been working on feasibility studies of future instruments in the gamma-ray range, from several keV up to a few MeV, in collaboration with other research institutes. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs), Pulsars, Active Galactic Nuclei (AGN).Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) are very attractive materials for gamma-ray detection, since they have already demonstrated their great performance onboard current space missions, such as IBIS/INTEGRAL and BAT/SWIFT, and future projects like ASIM onboard the ISS. However, the energy coverage of these instruments is limited up to a few hundred keV, and there has not been yet a dedicated instrument for polarimetry.Our research and development activities aim to study a gamma-ray imaging spectrometer in the MeV range based on CdTe detectors, suited either for the focal plane of a focusing mission or as a calorimeter for a Compton camera. In addition, our undergoing detector design is proposed as the baseline for the payload of a balloon-borne experiment dedicated to hard X- and soft gamma-ray polarimetry, currently under study and called CμSP (CZT μ-Spectrometer Polarimeter). Other research institutes such as INAF-IASF, DTU Space, LIP, INEM/CNR, CEA, are involved in this proposal. We will report on the main features of the prototype we are developing at the Institute of Space Sciences, a gamma-ray detector with imaging and polarimetry capabilities in order to fulfil the combined requirement of high detection efficiency with good spatial and energy resolution driven by the science.

  7. Charge collection studies on custom silicon detectors irradiated up to 1.6·1017 neq/cm-2

    NASA Astrophysics Data System (ADS)

    Kramberger, G.; Cindro, V.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

    2013-08-01

    Silicon n+-p diodes with special design of the implant — so called ``spaghetti diodes'' — were used to study the impact of implantation process on charge multiplication after irradiations to extremely large 1 MeV neutron equivalent fluences of reactor neutrons up to 1.6·1017 cm-2. Silicon remains functional even at these unprecedented levels of irradiation. Above 1015 cm-2 collected charge (Q) grows linearly with bias voltage, with the Q-V slope exhibiting a power law dependence on fluence. Different implantation processes were implemented on samples to study the impact of implantation on charge multiplication. ``Spaghetti'' diodes of different thicknesses were also compared to conventional strip and pad detectors in order to determine the impact of different electric and weighting field on the collected charge.

  8. Two CdZnTe Detector-Equipped Gamma-ray Spectrometers for Attribute Measurements on Irradiated Nuclear Fuel

    SciTech Connect

    Hartwell, John Kelvin; Winston, Philip Lon; Marts, Donna Jeanne; Moore-McAteer, Lisa Dawn; Taylor, Steven Cheney

    2003-04-01

    Some United States Department of Energy-owned spent fuel elements from foreign research reactors (FRRs) are presently being shipped from the reactor location to the US for storage at the Idaho National Engineering and Environmental Laboratory (INEEL). Two cadmium zinc telluride detector-based gamma-ray spectrometers have been developed to confirm the irradiation status of these fuels. One spectrometer is configured to operate underwater in the spent fuel pool of the shipping location, while the other is configured to interrogate elements on receipt in the dry transfer cell at the INEEL’s Interim Fuel Storage Facility (IFSF). Both units have been operationally tested at the INEEL.

  9. Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

    NASA Astrophysics Data System (ADS)

    Martyniuk, Piotr; Benyahia, Djalal; Kowalewski, Andrzej; Kubiszyn, Łukasz; Stępień, Dawid; Gawron, Waldemar; Rogalski, Antoni

    2016-05-01

    In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2 μm at 230 K. The 1.1 mm thick GaAs substrate was converted into immersion lens to limit an influence of the defects occurring during growth on GaAs substrate and to increase detectivity, ∼2 × 1010 cm Hz1/2/W at 230 K, under reverse bias 100 mV and ∼4 × 109 cm Hz1/2/W at 300 K, under 500 mV. Presented results are better than PIN architectures with the same and lower cut-off wavelength grown on GaAs without immersion lens and grown on GaSb substrates.

  10. A CMOS Active Pixel Sensor for Charged Particle Detection

    SciTech Connect

    Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George; Singh, Kunal; Wurzel, Samuel E.; Wieman, Howard; Yamamoto, Eugene

    2002-12-02

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

  11. The MOS-type DEPFET pixel sensor for the ILC environment

    NASA Astrophysics Data System (ADS)

    Andricek, L.; Fischer, P.; Heinzinger, K.; Herrmann, S.; Herz, D.; Karagounis, M.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Moser, H.-G.; Peric, I.; Reuen, L.; Richter, R. H.; Sandow, C.; Schnecke, M.; Schopper, F.; Strüder, L.; Törne, E. V.; Treis, J.; Trimpl, M.; Velthuis, J.; Wermes, N.; Wölfel, S.

    2006-09-01

    A new generation of MOS-type DEPFET active pixel sensors in double metal/double poly technology with ˜25 μm pixel size has been developed to meet the requirements of the vertex detector at the International Linear Collider (ILC). The paper presents the design and technology of the new linear MOS-type DEPFET sensors including a module concept and results of a feasibility study on how to build ultra-thin fully depleted sensors. One of the major challenges at the ILC is the dominant e +e - pair background from beam-beam interactions. The resulting high occupancy in the first layer of the vertex detector can be reduced by an extremely fast read out of the pixel arrays but the pair-produced electrons will also damage the sensor by ionization. Like all MOS devices, the DEPFET is inherently susceptible to ionizing radiation. The predominant effect of this kind of irradiation is the shift of the threshold voltage to more negative values due to the build up of positive oxide charges. The paper presents the first results of the irradiation of such devices with hard X-rays and gamma rays from a 60Co source up to 1 Mrad(Si) under various biasing conditions.

  12. X-ray imaging and imaging spectroscopy of fusion plasmas and light-source experiments with spherical optics and pixel array detectors

    NASA Astrophysics Data System (ADS)

    Hill, K. W.; Bitter, M.; Delgado-Aparicio, L.; Pablant, N. A.; Beiersdorfer, P.; Sanchez del Rio, M.; Zhang, L.

    2012-10-01

    High resolution (λ/Δλ ~10,000) 1D imaging x-ray spectroscopy using a spherically bent crystal and a 2D hybrid pixelarray detector (PAD) is used world wide for Doppler measurements of ion-temperature (Ti) and plasma flow-velocityprofiles in magnetic confinement fusion (MCF) plasmas. Meter sized plasmas are diagnosed with cm spatial resolution and 10 ms time resolution. This concept can also be used as a diagnostic of small sources, such as inertial confinement fusion (ICF) plasmas and targets on x-ray light source beam lines, with spatial resolution of microns. A new concept of using matched pairs of spherically bent crystals for monochromatic stigmatic 2D x-ray imaging of mm sized sources offers the possibility of spatial resolution of microns and large solid angle, relative to that achieved with pinhole imaging. Other potential applications of the 2D imaging schemes include x-ray lithography and x-ray microscopy for biological and materials science research. Measurements from MFE plasmas, as well as laboratory experiments and ray tracing computations validating the 1D imaging spectroscopy and 2D x-ray imaging techniques will be presented.

  13. From hybrid to CMOS pixels ... a possibility for LHC's pixel future?

    NASA Astrophysics Data System (ADS)

    Wermes, N.

    2015-12-01

    Hybrid pixel detectors have been invented for the LHC to make tracking and vertexing possible at all in LHC's radiation intense environment. The LHC pixel detectors have meanwhile very successfully fulfilled their promises and R&D for the planned HL-LHC upgrade is in full swing, targeting even higher ionising doses and non-ionising fluences. In terms of rate and radiation tolerance hybrid pixels are unrivaled. But they have disadvantages as well, most notably material thickness, production complexity, and cost. Meanwhile also active pixel sensors (DEPFET, MAPS) have become real pixel detectors but they would by far not stand the rates and radiation faced from HL-LHC. New MAPS developments, so-called DMAPS (depleted MAPS) which are full CMOS-pixel structures with charge collection in a depleted region have come in the R&D focus for pixels at high rate/radiation levels. This goal can perhaps be realised exploiting HV technologies, high ohmic substrates and/or SOI based technologies. The paper covers the main ideas and some encouraging results from prototyping R&D, not hiding the difficulties.

  14. Discharge probability measurement of a Triple GEM detector irradiated with neutrons

    NASA Astrophysics Data System (ADS)

    Croci, G.; Alfonsi, M.; Ropelewski, L.; Tsipolitis, G.; Fanourakis, G.; Ntomari, E.; Karakostas, K.

    2013-06-01

    Neutron GEM-based detectors represent a new frontier of diagnostic devices in neutron-linked physics applications such as detectors for fusion experiments (Croci et al., 2012 [1]) and spallation sources (Murtas et al., 2012 [2]). Besides, detectors installed in HEP experiments (like LHC at CERN) are dip in a high flux neutron field. For example, the TOTEM T2 GEM telescope (Bagliesi et al., 2010 [3]) at LHC is currently installed very close to the beam pipe where a high intensity (>104 n cm-2 s-1) neutron background is present. In order to assess the capability (particularly related to discharge probability) of working in intense neutrons environment, a 10×10 cm2 Triple GEM detector has been tested using a high flux (105 n cm-2 s-1) neutron beam. The neutron-induced discharge probability PDisch was measured to be 1.37×10-7 at an effective gain G=5×104. In addition, the different types of neutron interactions within the detector were fully explained through a GEANT4 simulation.

  15. Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Carteglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnessy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. . Inst. for Particle Physics); Ellison, J.A. ); Ferguson, P. ); Giubellino

    1990-01-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

  16. Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Cartiglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnesy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Tennenbaum, P. . Inst. for Particle Physics); Ellison, J.; Jerger, S.; Lietzke, C.; Wimpenny, S.J. ); Ferguson, P. ); Giubellino, P. )

    1991-04-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. In this paper, the authors report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at U.C. Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC.

  17. Quantum Efficiency for Electron-Hole Pair Generation by Infrared Irradiation in Germanium Cryogenic Detectors

    NASA Astrophysics Data System (ADS)

    Domange, J.; Broniatowski, A.; Olivieri, E.; Chapellier, M.; Dumoulin, L.

    2009-12-01

    A study is made of the quantum efficiency of a coplanar grid ionization/heat Ge detector operated at cryogenic temperatures for dark matter search. Carrier generation is performed with infra-red LEDs of different wavelengths (1.30, 1.45, and 1.65 μm) near the optical bandgap of germanium. The corresponding quantum efficiency is obtained from an analysis of the Joule (Luke-Neganov) effect. This investigation is part of a program to optimize the reset procedure of the detectors in the Edelweiss-II dark matter search experiment at the Modane Underground Laboratory.

  18. Dynamics of Coronal Bright Points as Seen by Sun Watcher Using Active Pixel System Detector and Image Processing (SWAP), Atmospheric Imaging Assembly (AIA), and Helioseismic and Magnetic Imager (HMI)

    NASA Astrophysics Data System (ADS)

    Chandrashekhar, K.; Krishna Prasad, S.; Banerjee, D.; Ravindra, B.; Seaton, Daniel B.

    2013-08-01

    The Sun Watcher using Active Pixel system detector and Image Processing (SWAP) onboard the PRoject for OnBoard Autonomy-2 (PROBA2) spacecraft provides images of the solar corona in EUV channel centered at 174 Å. These data, together with the Atmospheric Imaging Assembly (AIA) and the Helioseismic and Magnetic Imager (HMI) onboard Solar Dynamics Observatory (SDO), are used to study the dynamics of coronal bright points. The evolution of the magnetic polarities and associated changes in morphology are studied using magnetograms and multi-wavelength imaging. The morphology of the bright points seen in low-resolution SWAP images and high-resolution AIA images show different structures, whereas the intensity variations with time show similar trends in both SWAP 174 Å and AIA 171 Å channels. We observe that bright points are seen in EUV channels corresponding to a magnetic flux of the order of 1018 Mx. We find that there exists a good correlation between total emission from the bright point in several UV-EUV channels and total unsigned photospheric magnetic flux above certain thresholds. The bright points also show periodic brightenings, and we have attempted to find the oscillation periods in bright points and their connection to magnetic-flux changes. The observed periods are generally long (10 - 25 minutes) and there is an indication that the intensity oscillations may be generated by repeated magnetic reconnection.

  19. X-ray irradiation effects on the trapping properties of Cd{sub 1-x}Zn{sub x}Te detectors

    SciTech Connect

    Fraboni, B.; Pasquini, L.; Castaldini, A.; Cavallini, A.

    2009-11-01

    CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the 'macroscopic' performance of the detectors, investigated by gamma-ray spectroscopy to the 'microscopic' effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.

  20. PixelLearn

    NASA Technical Reports Server (NTRS)

    Mazzoni, Dominic; Wagstaff, Kiri; Bornstein, Benjamin; Tang, Nghia; Roden, Joseph

    2006-01-01

    PixelLearn is an integrated user-interface computer program for classifying pixels in scientific images. Heretofore, training a machine-learning algorithm to classify pixels in images has been tedious and difficult. PixelLearn provides a graphical user interface that makes it faster and more intuitive, leading to more interactive exploration of image data sets. PixelLearn also provides image-enhancement controls to make it easier to see subtle details in images. PixelLearn opens images or sets of images in a variety of common scientific file formats and enables the user to interact with several supervised or unsupervised machine-learning pixel-classifying algorithms while the user continues to browse through the images. The machinelearning algorithms in PixelLearn use advanced clustering and classification methods that enable accuracy much higher than is achievable by most other software previously available for this purpose. PixelLearn is written in portable C++ and runs natively on computers running Linux, Windows, or Mac OS X.

  1. Development of CMOS Pixel Sensors with digital pixel dedicated to future particle physics experiments

    NASA Astrophysics Data System (ADS)

    Zhao, W.; Wang, T.; Pham, H.; Hu-Guo, C.; Dorokhov, A.; Hu, Y.

    2014-02-01

    Two prototypes of CMOS pixel sensor with in-pixel analog to digital conversion have been developed in a 0.18 μm CIS process. The first design integrates a discriminator into each pixel within an area of 22 × 33 μm2 in order to meet the requirements of the ALICE inner tracking system (ALICE-ITS) upgrade. The second design features 3-bit charge encoding inside a 35 × 35 μm2 pixel which is motivated by the specifications of the outer layers of the ILD vertex detector (ILD-VXD). This work aims to validate the concept of in-pixel digitization which offers higher readout speed, lower power consumption and less dead zone compared with the column-level charge encoding.

  2. Minimizing the 1/r(2) perturbation for ideal fluence detectors in small source γ-irradiation fields.

    PubMed

    Bielajew, Alex F

    2014-08-21

    A technique for analyzing the effect of the geometrical shape of a source or a detector, using a quadrupole expansion, is described herein. It is shown that this method may be exploited to predict, optimize the geometry of a source, or a measurement device, and nearly eliminate, the departure from the 1/r(2) fall-off characteristic due to irradiation from small sources. We have investigated several simple shapes that have a vanishing Q2 quadrupole moment: a right circular cylinder with a diameter to depth ratio of √[2], a cone with a radius to height ratio of unity, and an oblate ellipsoid with a diameter to depth ratio of √[3/2]. These ideal shapes produce optimally small departures in a 1/r(2) field, nearly mimicking a point-like detector. We have also found a rotationally symmetric shape, intermediate to the other three, that has additionally, a vanishing Q4, the hexadecapole moment. This geometry further improves the 1/r(2)-perturbation characteristics and has an additional free parameter that may be adjusted to model the ideal cylinder, cone or oblate spheroid. PMID:25054611

  3. Two-dimensional pixel array image sensor for protein crystallography

    SciTech Connect

    Beuville, E.; Beche, J.-F.; Cork, C.

    1996-07-01

    A 2D pixel array image sensor module has been designed for time resolved Protein Crystallography. This smart pixels detector significantly enhances time resolved Laue Protein crystallography by two to three orders of magnitude compared to existing sensors like films or phosphor screens coupled to CCDs. The resolution in time and dynamic range of this type of detector will allow one to study the evolution of structural changes that occur within the protein as a function of time. This detector will also considerably accelerate data collection in static Laue or monochromatic crystallography and make better use of the intense beam delivered by synchrotron light sources. The event driven pixel array detectors, based on the column Architecture, can provide multiparameter information (energy discrimination, time), with sparse and frameless readout without significant dead time. The prototype module consists of a 16x16 pixel diode array bump-bonded to the integrated circuit. The detection area is 150x150 square microns.

  4. Pixelated filters for spatial imaging

    NASA Astrophysics Data System (ADS)

    Mathieu, Karine; Lequime, Michel; Lumeau, Julien; Abel-Tiberini, Laetitia; Savin De Larclause, Isabelle; Berthon, Jacques

    2015-10-01

    Small satellites are often used by spatial agencies to meet scientific spatial mission requirements. Their payloads are composed of various instruments collecting an increasing amount of data, as well as respecting the growing constraints relative to volume and mass; So small-sized integrated camera have taken a favored place among these instruments. To ensure scene specific color information sensing, pixelated filters seem to be more attractive than filter wheels. The work presented here, in collaboration with Institut Fresnel, deals with the manufacturing of this kind of component, based on thin film technologies and photolithography processes. CCD detectors with a pixel pitch about 30 μm were considered. In the configuration where the matrix filters are positioned the closest to the detector, the matrix filters are composed of 2x2 macro pixels (e.g. 4 filters). These 4 filters have a bandwidth about 40 nm and are respectively centered at 550, 700, 770 and 840 nm with a specific rejection rate defined on the visible spectral range [500 - 900 nm]. After an intense design step, 4 thin-film structures have been elaborated with a maximum thickness of 5 μm. A run of tests has allowed us to choose the optimal micro-structuration parameters. The 100x100 matrix filters prototypes have been successfully manufactured with lift-off and ion assisted deposition processes. High spatial and spectral characterization, with a dedicated metrology bench, showed that initial specifications and simulations were globally met. These excellent performances knock down the technological barriers for high-end integrated specific multi spectral imaging.

  5. Thermophysical properties and reaction kinetics of γ-irradiated poly allyl diglycol carbonates nuclear track detector

    NASA Astrophysics Data System (ADS)

    Elmaghraby, Elsayed K.; Seddik, Usama

    2015-07-01

    Kinetic thermogravimetric technique was used to study the effect of gamma irradiation on the poly allyl diglycol carbonates (PADC) within the dose range from 50 to ? Gy. The approach of Coats-Redfern was used to analyze the data. Results showed that low doses around 50 Gy make the polymer slightly more resistive to heat treatment. Higher radiation doses cause severe effects in the samples accompanied by the formation of lower molecular mass species and consequent crosslinking. Results support the domination of re-polymerization and crosslinking for the γ radiation interaction PADC at dose below about ? Gy, while the situation is inverted above ? Gy in which chain secession dominates.

  6. Status of the CMS pixel project

    SciTech Connect

    Uplegger, Lorenzo; /Fermilab

    2008-01-01

    The Compact Muon Solenoid Experiment (CMS) will start taking data at the Large Hadron Collider (LHC) in 2008. The closest detector to the interaction point is the silicon pixel detector which is the heart of the tracking system. It consists of three barrel layers and two pixel disks on each side of the interaction point for a total of 66 million channels. Its proximity to the interaction point means there will be very large particle fluences and therefore a radiation-tolerant design is necessary. The pixel detector will be crucial to achieve a good vertex resolution and will play a key role in pattern recognition and track reconstruction. The results from test beam runs prove that the expected performances can be achieved. The detector is currently being assembled and will be ready for insertion into CMS in early 2008. During the assembly phase, a thorough electronic test is being done to check the functionality of each channel to guarantee the performance required to achieve the physics goals. This report will present the final detector design, the status of the production as well as results from test beam runs to validate the expected performance.

  7. Pixelated diffraction signatures for explosive detection

    NASA Astrophysics Data System (ADS)

    O'Flynn, Daniel; Reid, Caroline; Christodoulou, Christiana; Wilson, Matt; Veale, Matthew C.; Seller, Paul; Speller, Robert

    2012-06-01

    Energy dispersive X-ray diffraction (EDXRD) is a technique which can be used to improve the detection and characterisation of explosive materials. This study has performed EDXRD measurements of various explosive compounds using a novel, X-ray sensitive, pixelated, energy resolving detector developed at the Rutherford Appleton Laboratory, UK (RAL). EDXRD measurements are normally performed at a fixed scattering angle, but the 80×80 pixel detector makes it possible to collect both spatially resolved and energy resolved data simultaneously. The detector material used is Cadmium Telluride (CdTe), which can be utilised at room temperature and gives excellent spectral resolution. The setup uses characteristics from both energy dispersive and angular dispersive scattering techniques to optimise specificity and speed. The purpose of the study is to develop X-ray pattern "footprints" of explosive materials based on spatial and energy resolved diffraction data, which can then be used for the identification of such materials hidden inside packages or baggage. The RAL detector is the first energy resolving pixelated detector capable of providing an energy resolution of 1.0-1.5% at energies up to 150 keV. The benefit of using this device in a baggage scanner would be the provision of highly specific signatures to a range of explosive materials. We have measured diffraction profiles of five explosives and other compounds used to make explosive materials. High resolution spectra have been obtained. Results are presented to show the specificity of the technique in finding explosives within baggage.

  8. Development of a high density pixel multichip module at Fermilab

    SciTech Connect

    Cardoso, G.

    2001-03-08

    At Fermilab, both pixel detector multichip module and sensor hybridization are being developed for the BTeV experiment. The BTeV pixel detector is based on a design relying on a hybrid approach. With this approach, the readout chip and the sensor array are developed separately and the detector is constructed by flip-chip mating the two together. This method offers maximum flexibility in the development process, choice of fabrication technologies, and the choice of sensor material. This paper presents strategies to handle the required data rate and performance results of the first prototype and detector hybridization.

  9. Simulation of Charge Collection in Diamond Detectors Irradiated with Deuteron-Triton Neutron Sources

    SciTech Connect

    Milocco, Alberto; Trkov, Andrej; Pillon, Mario

    2011-12-13

    Diamond-based neutron spectrometers exhibit outstanding properties such as radiation hardness, low sensitivity to gamma rays, fast response and high-energy resolution. They represent a very promising application of diamonds for plasma diagnostics in fusion devices. The measured pulse height spectrum is obtained from the collection of helium and beryllium ions produced by the reactions on {sup 12}C. An original code is developed to simulate the production and the transport of charged particles inside the diamond detector. The ion transport methodology is based on the well-known TRIM code. The reactions of interest are triggered using the ENDF/B-VII.0 nuclear data for the neutron interactions on carbon. The model is implemented in the TALLYX subroutine of the MCNP5 and MCNPX codes. Measurements with diamond detectors in a {approx}14 MeV neutron field have been performed at the FNG (Rome, Italy) and IRMM (Geel, Belgium) facilities. The comparison of the experimental data with the simulations validates the proposed model.

  10. Evaluation of the breakdown behaviour of ATLAS silicon pixel sensors after partial guard-ring removal

    NASA Astrophysics Data System (ADS)

    Goessling, C.; Klingenberg, R.; Muenstermann, D.; Wittig, T.

    2010-12-01

    To avoid geometrical inefficiencies in the ATLAS pixel detector, the concept of shingling is used up to now in the barrel section. For the upgrades of ATLAS, it is desired to avoid this as it increases the volume and material budget of the pixel layers and complicates the cooling. A direct planar edge-to-edge arrangement of pixel modules has not been possible in the past due to about 1100 μm of inactive edge composed of approximately 600 μm of guard rings and 500 μm of safety margin. In this work, the safety margin and guard rings of ATLAS SingleChip sensors were cut at different positions using a standard diamond dicing saw and irradiated afterwards to explore the breakdown behaviour and the leakage current development. It is found that the inactive edge can be reduced to about 400 μm of guard rings with almost no reduction in pre-irradiation testability and leakage current performance. This is in particular important for the insertable b-layer upgrade of ATLAS (IBL) where inactive edges of less than 450 μm width are required.

  11. Small pixel oversampled IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Caulfield, John; Curzan, Jon; Lewis, Jay; Dhar, Nibir

    2015-06-01

    We report on a new high definition high charge capacity 2.1 Mpixel MWIR Infrared Focal Plane Array. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which is below the Nyquist limit imposed by the optical systems Point Spread Function (PSF). These smaller sub diffraction limited pixels allow spatial oversampling of the image. We show that oversampling IRFPAs enables improved fidelity in imaging including resolution improvements, advanced pixel correlation processing to reduce false alarm rates, improved detection ranges, and an improved ability to track closely spaced objects. Small pixel HD arrays are viewed as the key component enabling lower size, power and weight of the IR Sensor System. Small pixels enables a reduction in the size of the systems components from the smaller detector and ROIC array, the reduced optics focal length and overall lens size, resulting in an overall compactness in the sensor package, cooling and associated electronics. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  12. Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

    SciTech Connect

    Pillon, M.; Angelone, M.; Aielli, G.; Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.

    2008-09-01

    Diamond exhibits many properties such as an outstanding radiation hardness and fast response time both important to design detectors working in extremely radioactive environments. Among the many applications these devices can be used for, there is the development of a fast and radiation hard neutron detector for the next generation of fusion reactors, such as the International Thermonuclear Experimental Reactor project, under construction at Cadarache in France. A technology to routinely produce electronic grade synthetic single crystal diamond detectors was recently developed by our group. One of such detectors, with an energy resolution of 0.9% as measured using an {sup 241}Am{alpha} particle source, has been heavily irradiated with 14.8 MeV neutrons produced by the Frascati Neutron Generator. The modifications of its spectroscopic properties have been studied as a function of the neutron fluence up to 2.0x10{sup 14} n/cm{sup 2}. In the early stage of the irradiation procedure an improvement in the spectroscopic performance of the detector was observed. Subsequently the detection performance remains stable for all the given neutron fluence up to the final one thus assessing a remarkable radiation hardness of the device. The neutron damage in materials has been calculated and compared with the experimental results. This comparison is discussed within the nonionizing energy loss (NIEL) hypothesis, which states that performance degradation is proportional to NIEL.

  13. Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

    NASA Astrophysics Data System (ADS)

    Pillon, M.; Angelone, M.; Aielli, G.; Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.

    2008-09-01

    Diamond exhibits many properties such as an outstanding radiation hardness and fast response time both important to design detectors working in extremely radioactive environments. Among the many applications these devices can be used for, there is the development of a fast and radiation hard neutron detector for the next generation of fusion reactors, such as the International Thermonuclear Experimental Reactor project, under construction at Cadarache in France. A technology to routinely produce electronic grade synthetic single crystal diamond detectors was recently developed by our group. One of such detectors, with an energy resolution of 0.9% as measured using an A241m α particle source, has been heavily irradiated with 14.8 MeV neutrons produced by the Frascati Neutron Generator. The modifications of its spectroscopic properties have been studied as a function of the neutron fluence up to 2.0×1014 n/cm2. In the early stage of the irradiation procedure an improvement in the spectroscopic performance of the detector was observed. Subsequently the detection performance remains stable for all the given neutron fluence up to the final one thus assessing a remarkable radiation hardness of the device. The neutron damage in materials has been calculated and compared with the experimental results. This comparison is discussed within the nonionizing energy loss (NIEL) hypothesis, which states that performance degradation is proportional to NIEL.

  14. Thermal, structural and mechanical properties of neutron irradiated Bayfol nuclear track detector

    NASA Astrophysics Data System (ADS)

    Nouh, S. A.; Mohamed, Amal; Bahammam, S.

    2009-07-01

    Samples from sheets of the polymeric material Bayfol have been exposed to neutrons of incident energy in the range 0.8-19.2 MeV. The resultant effect of neutron irradiation on the thermal properties of Bayfol has been investigated using thermo-gravimetric analysis. The onset temperature of decomposition and activation energy of thermal decomposition were calculated. The variation of transition temperatures with neutron energy has been determined using differential thermal analysis. The results indicate Bayfol thermograms characterized by the appearance of an endothermic peak due to melting. Melting temperature was found to be dependent on the neutron energy. Structural property studies using infrared spectroscopy were performed and results indicated that scission takes place at the carbonate site with the formation of a hydroxyl group. Mechanical properties were studied and it is shown that, at the fluence range 0-4.4 MeV, the standard chains and a great number of chain ends weaken and the material may become softer.

  15. Characterization of radiation damage caused by 23 MeV protons in Multi-Pixel Photon Counter (MPPC)

    NASA Astrophysics Data System (ADS)

    Li, Zhengwei; Xu, Yupeng; Liu, Congzhan; Gu, Yudong; Xie, Fei; Li, Yanguo; Hu, Hongliang; Zhou, Xu; Lu, Xuefeng; Li, Xufang; Zhang, Shuo; Chang, Zhi; Zhang, Juan; Xu, Zhenling; Zhang, Yifei; Zhao, Jianling

    2016-06-01

    A automatic gain control system (AGC) is designed to continuously monitor and automatically control the gain of the phoswich detectors onboard the Hard X-ray Modulation Telescope (HXMT). It consists of a Am241 radioactive source and a photo-detector. The Am241 radioactive source is tagged within a plastic scintillator (BC440M). The scintillating photons produced by the decayed alpha particles from the radioactive source is readout by the photo-detector. The Multi-Pixel Photon Counter (MPPC) produced by Hamamatsu is used as the photo-detector for AGC. To verify the feasibility of its application in space environment, four MPPCs (S10362-33-050C) were irradiated by a beam of 23 MeV protons. The integrated proton fluence that exposed to the four MPPC samples are 1.0 ×108 p cm-2 , 2.0 ×108 p cm-2 , 4.0 ×108 p cm-2 and 1.0 ×1010 p cm-2 respectively. It is found that the increment leakage current of the MPPC samples caused by irradiation damage increase linearly with the integrated fluence. The pulse-height resolution of the MPPC has deteriorated hardly after irradiation. When irradiated up to 1.1 ×109cm-2 1 MeV equivalent neutrons, the MPPC completely lost its photon-counting capability but could still work as a photo-detector for AGC. The MPPC fails as a photo-detector for the AGC when the irradiated 1 MeV neutron equivalent fluences is up to 2.7 ×1010cm-2 .

  16. Pixel-One

    NASA Astrophysics Data System (ADS)

    Pedichini, F.; Di Paola, A.; Testa, V.

    2010-07-01

    The early future of astronomy will be dominated by Extremely Large Telescopes where the focal lengths will be of the order of several hundred meters. This yields focal plane sizes of roughly one square meter to obtain a field of view of about 5 x 5 arcmin. When operated in seeing limited mode this field is correctly sampled with 1x1mm pixels. Such a sampling can be achieved using a peculiar array of tiny CMOS active photodiodes illuminated through microlenses or lightpipes. If the photodiode is small enough and utilizes the actual pixel technology, its dark current can be kept well below the sky background photocurrent, thus avoiding the use of cumbersome cryogenics systems. An active smart electronics will manage each pixel up to the A/D conversion and data transfer. This modular block is the Pixel-One. A 30x30 mm tile filled with 1000 Pixel-Ones could be the basic unit to mosaic very large focal planes. By inserting dispersion elements inside the optical path of the lenslet array one could also produce a low dispersed spectrum of each focal plane sub-aperture and, by using an array of few smart photodiodes, also get multi-wavelength information in the optical band for each equivalent focal plane pixel. An application to the E-ELT is proposed.

  17. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Tartarotti Maimone, D.; Pennicard, D.; Sarajlic, M.; Graafsma, H.

    2014-12-01

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~ 10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effects, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of the electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel (``edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays ( < 10 keV), especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model can be used to optimize the edge design. From the edge optimization, it is found that in order to guarantee the sensitivity of the last few pixels to low-energy X-rays, the edge space should be kept at least 50% of

  18. Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

    SciTech Connect

    Pengg, F. |; Campbell, M.; Heijne, E.H.M.; Snoeys, W.

    1996-06-01

    Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e{sup {minus}}r.m.s. before and 150e{sup {minus}}r.m.s. after irradiation. With a discriminator threshold set to 5000e{sup {minus}}, which reduces for the same bias setting to 400e{sup {minus}} after irradiation, the threshold variation is 300e{sup {minus}}r.m.s. and 250e{sup {minus}}r.m.s. respectively. The time walk is 40ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation.

  19. Study on the Infrared Lens-Free Irradiation Thermometer Based on InGaAs Detector at NIM

    NASA Astrophysics Data System (ADS)

    Hao, X. P.; Yuan, Z. D.; Huang, S. Y.; Song, J.; Xu, K.

    2015-12-01

    A lens-free irradiation thermometer (LF-IRRT) designed for laboratory applications, with 1.55 \\upmu m center wavelength based on the InGaAs detector, and a temperature range from 300° C to 1000° C, has been developed at NIM of China. The thermometer has no imaging optics for collecting the radiation, for which a major benefit is improved stability compared to other radiation thermometers. This paper introduces the measurement principle, the structure of the LF-IRRT, the multiple-point calibration method, and the stability and expanded uncertainty of the thermometer. The stability of the LF-IRRT is better than 0.070° C at temperatures from 300° C to 1000° C over a period of 1 month. The expanded uncertainty is less than 0.20° C for temperatures between 300° C and 1000° C. The size-of-source effect of the LF-IRRT is 0.6 % from the source diameter range from 10 mm to 65 mm.

  20. Active Pixel Sensors: Are CCD's Dinosaurs?

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R.

    1993-01-01

    Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

  1. Power Studies for the CMS Pixel Tracker

    SciTech Connect

    Todri, A.; Turqueti, M.; Rivera, R.; Kwan, S.; /Fermilab

    2009-01-01

    The Electronic Systems Engineering Department of the Computing Division at the Fermi National Accelerator Laboratory is carrying out R&D investigations for the upgrade of the power distribution system of the Compact Muon Solenoid (CMS) Pixel Tracker at the Large Hadron Collider (LHC). Among the goals of this effort is that of analyzing the feasibility of alternative powering schemes for the forward tracker, including DC to DC voltage conversion techniques using commercially available and custom switching regulator circuits. Tests of these approaches are performed using the PSI46 pixel readout chip currently in use at the CMS Tracker. Performance measures of the detector electronics will include pixel noise and threshold dispersion results. Issues related to susceptibility to switching noise will be studied and presented. In this paper, we describe the current power distribution network of the CMS Tracker, study the implications of the proposed upgrade with DC-DC converters powering scheme and perform noise susceptibility analysis.

  2. Pixel telescope test in STAR at RHIC

    NASA Astrophysics Data System (ADS)

    Sun, Xiangming; Szelezniak, Michal; Greiner, Leo; Matis, Howard; Vu, Chinh; Stezelberger, Thorsten; Wieman, Howard

    2007-10-01

    The STAR experiment at RHIC is designing a new inner vertex detector called the Heavy Flavor Tracker (HFT). The HFT's innermost two layers is called the PIXEL detector which uses Monolithic Active Pixel Sensor technology (MAPS). To test the MAPS technology, we just constructed and tested a telescope. The telescope uses a stack of three MIMOSTAR2 chips, Each MIMOSTAR2 sensor, which was designed by IPHC, is an array of 132x128 pixels with a square pixel size of 30 μ. The readout of the telescope makes use of the ALICE DDL/SIU cards, which is compatible with the future STAR data acquisition system called DAQ1000. The telescope was first studied in a 1.2 GeV/c electron beam at LBNL's Advanced Light Source. Afterwards, the telescope was outside the STAR magnet, and then later inside it, 145 cm away from STAR's center. We will describe this first test of MAPS technology in a collider environment, and report on the occupancy, particle flux, and performance of the telescope.

  3. Digital-pixel focal plane array development

    NASA Astrophysics Data System (ADS)

    Brown, Matthew G.; Baker, Justin; Colonero, Curtis; Costa, Joe; Gardner, Tom; Kelly, Mike; Schultz, Ken; Tyrrell, Brian; Wey, Jim

    2010-01-01

    Since 2006, MIT Lincoln Laboratory has been developing Digital-pixel Focal Plane Array (DFPA) readout integrated circuits (ROICs). To date, four 256 × 256 30 μm pitch DFPA designs with in-pixel analog to digital conversion have been fabricated using IBM 90 nm CMOS processes. The DFPA ROICs are compatible with a wide range of detector materials and cutoff wavelengths; HgCdTe, QWIP, and InGaAs photo-detectors with cutoff wavelengths ranging from 1.6 to 14.5 μm have been hybridized to the same digital-pixel readout. The digital-pixel readout architecture offers high dynamic range, A/C or D/C coupled integration, and on-chip image processing with low power orthogonal transfer operations. The newest ROIC designs support two-color operation with a single Indium bump connection. Development and characterization of the two-color DFPA designs is presented along with applications for this new digital readout technology.

  4. Detector requirements for space infrared astronomy

    NASA Technical Reports Server (NTRS)

    Wright, E. L.

    1986-01-01

    Requirements for background-limited (BLIP) detectors are discussed in terms of number of photons falling on each pixel, dark current, high detective quantum efficiencies, large numbers of pixels, and array size.

  5. Selecting Pixels for Kepler Downlink

    NASA Technical Reports Server (NTRS)

    Bryson, Stephen T.; Jenkins, Jon M.; Klaus, Todd C.; Cote, Miles T.; Quintana, Elisa V.; Hall, Jennifer R.; Ibrahim, Khadeejah; Chandrasekaran, Hema; Caldwell, Douglas A.; Van Cleve, Jeffrey E.; Haas, Michael R.

    2010-01-01

    The Kepler mission monitors > 100,000 stellar targets using 42 2200 1024 pixel CCDs. Bandwidth constraints prevent the downlink of all 96 million pixels per 30-minute cadence, so the Kepler spacecraft downlinks a specified collection of pixels for each target. These pixels are selected by considering the object brightness, background and the signal-to-noise of each pixel, and are optimized to maximize the signal-to-noise ratio of the target. This paper describes pixel selection, creation of spacecraft apertures that efficiently capture selected pixels, and aperture assignment to a target. Diagnostic apertures, short-cadence targets and custom specified shapes are discussed.

  6. The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Zatko, B.; Sagatova, A.; Bohacek, P.; Sedlackova, K.; Sekacová, M.; Arbet, J.; Necas, V.

    2016-01-01

    In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 μm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates.

  7. A novel CMOS sensor with in-pixel auto-zeroed discrimination for charged particle tracking

    NASA Astrophysics Data System (ADS)

    Degerli, Y.; Guilloux, F.; Orsini, F.

    2014-05-01

    With the aim of developing fast and granular Monolithic Active Pixels Sensors (MAPS) as new charged particle tracking detectors for high energy physics experiments, a new rolling shutter binary pixel architecture concept (RSBPix) with in-pixel correlated double sampling, amplification and discrimination is presented. The discriminator features auto-zeroing in order to compensate process-related transistor mismatches. In order to validate the pixel, a first monolithic CMOS sensor prototype, including a pixel array of 96 × 64 pixels, has been designed and fabricated in the Tower-Jazz 0.18 μm CMOS Image Sensor (CIS) process. Results of laboratory tests are presented.

  8. A study of the effect of gamma and laser irradiation on the thermal, optical and structural properties of CR-39 nuclear track detector

    NASA Astrophysics Data System (ADS)

    Nouh, S. A.; Atta, M. R.; El-Melleegy, W. M.

    2004-08-01

    A comparative study of the effect of gamma and laser irradiation on the thermal, optical and structural properties of the CR-39 diglycol carbonate solid state nuclear track detector has been carried out. Samples from CR-39 polymer were classified into two main groups: the first group was irradiated by gamma rays with doses at levels between 20 and 300 kGy, whereas the second group was exposed to infrared laser radiation with energy fluences at levels between 0.71 and 8.53 J/cm(2). Non-isothermal studies were carried out using thermogravimetry, differential thermogravimetry and differential thermal analysis to obtain activation energy of decomposition and transition temperatures for the non-irradiated and all irradiated CR-39 samples. In addition, optical and structural property studies were performed on non-irradiated and irradiated CR-39 samples using refractive index and X-ray diffraction measurements. Variation in the onset temperature of decomposition T-o, activation energy of decomposition E-a, melting temperature T-m, refractive index n and the mass fraction of the amorphous phase after gamma and laser irradiation were studied. It was found that many changes in the thermal, optical and structural properties of the CR-39 polymer could be produced by gamma irradiation via degradation and cross-linking mechanisms. Also, the gamma dose has an advantage of increasing the correlation between thermal stability of the CR-39 polymer and bond formation created by the ionizing effect of gamma radiation. On the other hand, higher laser-energy fluences in the range 4.27-8.53 J/cm(2) decrease the melting temperature of the CR-39 polymer and this is most suitable for applications requiring molding of the polymer at lower temperatures.

  9. Four-Channel Current-Biased Kinetic Inductance Detectors Using MgB $_2$ 2 Nanowires for Sensing Pulsed Laser Irradiation

    NASA Astrophysics Data System (ADS)

    Yoshioka, N.; Narukami, Y.; Miyajima, S.; Shishido, H.; Fujimaki, A.; Miki, S.; Wang, Z.; Ishida, T.

    2014-08-01

    We recently proposed the idea of a novel sort of superconducting detector, i.e., a current-biased kinetic inductance detector (CB-KID). This detector is different from a current-biased transition edge detector studied previously, and is able to sense a change in kinetic inductance given by (; kinetic inductivity, ; mass of Cooper pair, ; density of Cooper pairs, ; charge of Cooper pair, ; length of device, ; cross sectional area) under a constant dc bias current . In the present work, we first extend this idea to construct a multi-channel CB-KIDs array made of 200-nm-thick MgB thin-film meanderline with 3-m thin wire. We succeeded in observing clear signals for imaging from the four-channel CB-KIDs at 4 K by irradiating focused pulsed laser. A scanning laser spot can be achieved by an XYZ piezo-driven stage and an optical fiber with an aspheric focused lens. We can see typical signals from all 4 channels at 4 K, and obtain the positional dependence of the signal as the contour in XY plane. Our CB-KIDs can be used as neutron detectors by utilizing energy released from a nuclear reaction between B and cold neutron.

  10. SNR improvement for hyperspectral application using frame and pixel binning

    NASA Astrophysics Data System (ADS)

    Rehman, Sami Ur; Kumar, Ankush; Banerjee, Arup

    2016-05-01

    Hyperspectral imaging spectrometer systems are increasingly being used in the field of remote sensing for variety of civilian and military applications. The ability of such instruments in discriminating finer spectral features along with improved spatial and radiometric performance have made such instruments a powerful tool in the field of remote sensing. Design and development of spaceborne hyper spectral imaging spectrometers poses lot of technological challenges in terms of optics, dispersion element, detectors, electronics and mechanical systems. The main factors that define the type of detectors are the spectral region, SNR, dynamic range, pixel size, number of pixels, frame rate, operating temperature etc. Detectors with higher quantum efficiency and higher well depth are the preferred choice for such applications. CCD based Si detectors serves the requirement of high well depth for VNIR band spectrometers but suffers from smear. Smear can be controlled by using CMOS detectors. Si CMOS detectors with large format arrays are available. These detectors generally have smaller pitch and low well depth. Binning technique can be used with available CMOS detectors to meet the large swath, higher resolution and high SNR requirements. Availability of larger dwell time of satellite can be used to bin multiple frames to increase the signal collection even with lesser well depth detectors and ultimately increase the SNR. Lab measurements reveal that SNR improvement by frame binning is more in comparison to pixel binning. Effect of pixel binning as compared to the frame binning will be discussed and degradation of SNR as compared to theoretical value for pixel binning will be analyzed.

  11. Coherence experiments in single-pixel digital holography.

    PubMed

    Liu, Jung-Ping; Guo, Chia-Hao; Hsiao, Wei-Jen; Poon, Ting-Chung; Tsang, Peter

    2015-05-15

    In optical scanning holography (OSH), the coherence properties of the acquired holograms depend on the single-pixel size, i.e., the active area of the photodetector. For the first time, to the best of our knowledge, we have demonstrated coherent, partial coherent, and incoherent three-dimensional (3D) imaging by experiment in such a single-pixel digital holographic recording system. We have found, for the incoherent mode of OSH, in which the detector of the largest active area is applied, the 3D location of a diffusely reflecting object can be successfully retrieved without speckle noise. For the partial coherent mode employing a smaller pixel size of the detector, significant speckles and randomly distributed bright spots appear among the reconstructed images. For the coherent mode of OSH when the size of the pixel is vanishingly small, the bright spots disappear. However, the speckle remains and the signal-to-noise ratio is low. PMID:26393741

  12. Performance and quality control of Clear-PEM detector modules

    NASA Astrophysics Data System (ADS)

    Amaral, Pedro; Carriço, Bruno; Ferreira, Miguel; Moura, Rui; Ortigão, Catarina; Rodrigues, Pedro; Da Silva, José C.; Trindade, Andreia; Varela, João

    2007-10-01

    Clear-PEM is a dedicated PET scanner for breast and axilla cancer diagnosis, under development within the framework of the Crystal Clear Collaboration at CERN, aiming at the detection of tumors down to 2 mm in diameter. The camera consists of two planar detector heads with active dimensions 16.0×14.5 cm 2. Each head has 96 Clear-PEM detector modules consisting of 32 LYSO:Ce pixels with dimensions 2×2×20 mm 3 packed in a 4×8 BaSO 4 reflector matrix compressed between two Hamamatsu S8550 APD arrays in a double-readout configuration for Depth-of-Interaction (DoI) determination. The modules are individually measured and characterized before being grouped into Supermodules (comprised of 24 modules). Measured properties include photo-peak position, relative gain dispersion, energy resolution, cross-talk and DoI resolution. Optical inspection of matrices was also performed with the aid of a microscope, to search for pixel misalignments and matrix defects. Modules' performance was thoroughly evaluated with a 511 keV collimated beam to exactly determine DoI resolution. In addition, a fast quality control (QC) procedure using flood irradiations from a 137Cs source was applied systematically. The overall performance of the 24 detector modules complies with the design goals of the Clear-PEM detector, showing energy resolution around 15%, DoI resolution of about 2 mm and gain dispersion among pixels of 15%.

  13. Achievements of the ATLAS upgrade Planar Pixel Sensors R&D Project

    NASA Astrophysics Data System (ADS)

    Nellist, C.

    2015-01-01

    In the framework of the HL-LHC upgrade, the ATLAS experiment plans to introduce an all-silicon inner tracker to cope with the elevated occupancy. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project (PPS) was established comprising 19 institutes and more than 90 scientists. The paper provides an overview of the research and development project and highlights accomplishments, among them: beam test results with planar sensors up to innermost layer fluences (>1016 neq cm-2) measurements obtained with irradiated thin edgeless n-in-p pixel assemblies; recent studies of the SCP technique to obtain almost active edges by post-processing already existing sensors based on scribing, cleaving and edge passivation; an update on prototyping efforts for large areas: sensor design improvements and concepts for low-cost hybridisation; comparison between Secondary Ion Mass Spectrometry results and TCAD simulations. Together, these results allow an assessment of the state-of-the-art with respect to radiation-hard position-sensitive tracking detectors suited for the instrumentation of large areas.

  14. Pitch dependence of the tolerance of CMOS monolithic active pixel sensors to non-ionizing radiation

    NASA Astrophysics Data System (ADS)

    Doering, D.; Deveaux, M.; Domachowski, M.; Fröhlich, I.; Koziel, M.; Müntz, C.; Scharrer, P.; Stroth, J.

    2013-12-01

    CMOS monolithic active pixel sensors (MAPS) have demonstrated excellent performance as tracking detectors for charged particles. They provide an outstanding spatial resolution (a few μm), a detection efficiency of ≳ 99.9 %, very low material budget (0.05 %X0) and good radiation tolerance (≳ 1 Mrad, ≳1013neq /cm2) (Deveaux et al. [1]). This makes them an interesting technology for various applications in heavy ion and particle physics. Their tolerance to bulk damage was recently improved by using high-resistivity (∼ 1 kΩ cm) epitaxial layers as sensitive volume (Deveaux et al. [1], Dorokhov et al. [2]). The radiation tolerance of conventional MAPS is known to depend on the pixel pitch. This is as a higher pitch extends the distance, which signal electrons have to travel by thermal diffusion before being collected. Increased diffusion paths turn into a higher probability of loosing signal charge due to recombination. Provided that a similar effect exists in MAPS with high-resistivity epitaxial layer, it could be used to extend their radiation tolerance further. We addressed this question with MIMOSA-18AHR prototypes, which were provided by the IPHC Strasbourg and irradiated with reactor neutrons. We report about the results of this study and provide evidences that MAPS with 10 μm pixel pitch tolerate doses of ≳ 3 ×1014neq /cm2.

  15. Gamma-ray irradiation effects on InAs/GaSb-based nBn IR detector

    NASA Astrophysics Data System (ADS)

    Cowan, Vincent M.; Morath, Christian P.; Swift, Seth M.; Myers, Stephen; Gautam, Nutan; Krishna, Sanjay

    2011-01-01

    IR detectors operated in a space environment are subjected to a variety of radiation effects while required to have very low noise performance. When properly passivated, conventional mercury cadmium telluride (MCT)-based infrared detectors have been shown to perform well in space environments. However, the inherent manufacturing difficulties associated with the growth of MCT has resulted in a research thrust into alternative detector technologies, specifically type-II Strained Layer Superlattice (SLS) infrared detectors. Theory predicts that SLS-based detector technologies have the potential of offering several advantages over MCT detectors including lower dark currents and higher operating temperatures. Experimentally, however, it has been found that both p-on-n and n-on-p SLS detectors have larger dark current densities than MCT-based detectors. An emerging detector architecture, complementary to SLS-technology and hence forth referred to here as nBn, mitigates this issue via a uni-polar barrier design which effectively blocks majority carrier conduction thereby reducing dark current to more acceptable levels. Little work has been done to characterize nBn IR detectors tolerance to radiation effects. Here, the effects of gamma-ray radiation on an nBn SLS detector are considered. The nBn IR detector under test was grown by solid source molecular beam epitaxy and is composed of an InAs/GaSb SLS absorber (n) and contact (n) and an AlxGa1-xSb barrier (B). The radiation effects on the detector are characterized by dark current density measurements as a function of bias, device perimeter-to-area ratio and total ionizing dose (TID).

  16. The pixel tracking telescope at the Fermilab Test Beam Facility

    NASA Astrophysics Data System (ADS)

    Kwan, Simon; Lei, CM; Menasce, Dario; Moroni, Luigi; Ngadiuba, Jennifer; Prosser, Alan; Rivera, Ryan; Terzo, Stefano; Turqueti, Marcos; Uplegger, Lorenzo; Vigani, Luigi; Dinardo, Mauro E.

    2016-03-01

    An all silicon pixel telescope has been assembled and used at the Fermilab Test Beam Facility (FTBF) since 2009 to provide precise tracking information for different test beam experiments with a wide range of Detectors Under Test (DUTs) requiring high resolution measurement of the track impact point. The telescope is based on CMS pixel modules left over from the CMS forward pixel production. Eight planes are arranged to achieve a resolution of less than 8 μm on the 120 GeV proton beam transverse coordinate at the DUT position. In order to achieve such resolution with 100×150 μm2 pixel cells, the planes were tilted to 25 degrees to maximize charge sharing between pixels. Crucial for obtaining this performance is the alignment software, called Monicelli, specifically designed and optimized for this system. This paper will describe the telescope hardware, the data acquisition system and the alignment software constituting this particle tracking system for test beam users.

  17. Commissioning and Alignment of the Pixel Luminosity Telescope of CMS

    NASA Astrophysics Data System (ADS)

    Riley, Grant; CMS Collaboration

    2015-04-01

    The Pixel Luminosity Telescope (PLT) is one of the newest additions to the CMS detector at the LHC. It consists of 16 3-layer telescopes of silicon pixel detectors pointing toward the interaction point at the center of CMS. The pixel detectors are based on the same technology as the silicon pixel detector of CMS. The chips have an additional output, called a fast-out. This fast-out is sent whenever a hit is detected, and will be used to measure the luminosity. The fast-out can also be used to self trigger the the PLT allowing for measurement of the systematics and beam backgrounds. The PLT is expected to significantly improve the precision of the luminosity measurement that is fundamental for particle searches and cross section measurements with the CMS detector. Furthermore, with reconstructed particle trajectories, measurements of beam backgrounds and the location of the interaction point centroid can be obtained. First experiences with the PLT detector before and after installation are presented and the track reconstruction is discussed.

  18. Vertically integrated pixel readout chip for high energy physics

    SciTech Connect

    Deptuch, Grzegorz; Demarteau, Marcel; Hoff, James; Khalid, Farah; Lipton, Ronald; Shenai, Alpana; Trimpl, Marcel; Yarema, Raymond; Zimmerman, Tom; /Fermilab

    2011-01-01

    We report on the development of the vertex detector pixel readout chips based on multi-tier vertically integrated electronics for the International Linear Collider. Some testing results of the VIP2a prototype are presented. The chip is the second iteration of the silicon implementation of the prototype, data-pushed concept of the readout developed at Fermilab. The device was fabricated in the 3D MIT-LL 0.15 {micro}m fully depleted SOI process. The prototype is a three-tier design, featuring 30 x 30 {micro}m{sup 2} pixels, laid out in an array of 48 x 48 pixels.

  19. Characterization of a Depleted Monolithic Active Pixel Sensor (DMAPS) prototype

    NASA Astrophysics Data System (ADS)

    Obermann, T.; Havranek, M.; Hemperek, T.; Hügging, F.; Kishishita, T.; Krüger, H.; Marinas, C.; Wermes, N.

    2015-03-01

    New monolithic pixel detectors integrating CMOS electronics and sensor on the same silicon substrate are currently explored for particle tracking in future HEP experiments, most notably at the LHC . The innovative concept of Depleted Monolithic Active Pixel Sensors (DMAPS) is based on high resistive silicon bulk material enabling full substrate depletion and the application of an electrical drift field for fast charge collection, while retaining full CMOS capability for the electronics. The technology (150 nm) used offers quadruple wells and allows to implement the pixel electronics with independently isolated N- and PMOS transistors. Results of initial studies on the charge collection and sensor performance are presented.

  20. Gaseous Detectors

    NASA Astrophysics Data System (ADS)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.