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Sample records for plasma ion implantation

  1. Key issues in plasma source ion implantation

    SciTech Connect

    Rej, D.J.; Faehl, R.J.; Matossian, J.N.

    1996-09-01

    Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.

  2. Plasma immersion ion implantation for silicon processing

    NASA Astrophysics Data System (ADS)

    Yankov, Rossen A.; Mändl, Stephan

    2001-04-01

    Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 m technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII - fast process, implantation of the whole surface, low cost of ownership - several peculiarities - like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission - must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart-Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.

  3. Investigation on plasma immersion ion implantation treated medical implants.

    PubMed

    Mändl, S; Sader, R; Thorwarth, G; Krause, D; Zeilhofer, H-F; Horch, H H; Rauschenbach, B

    2002-08-01

    In this work the biocompatibility of osteosynsthesis plates treated with plasma immersion ion implantation (PIII) was tested using a rat model. Small rods (Ø 0.9 mm, and length 10 mm) prepared from different materials-pure Ti, anodised Ti, and two NiTi alloys (SE 508, and SM 495)-were implanted with oxygen by PIII to form a rutile surface layer and subsequently inserted into rat femurs, together with a control group of untreated samples. The results of the biomechanical tests correlate with the histological results, and show that plasma immersion ion implantation leads to an increase of biocompatibility and osseointegration of titanium and NiTi, albeit no improvement of the (bad) biocompatibility of the anodised Ti. Despite the layer thickness of up to 0.5 microm a strong influence of the base material is still present. PMID:12202173

  4. A commercial plasma source ion implantation facility

    SciTech Connect

    Scheuer, J.T.; Adler, R.A.; Horne, W.G.

    1996-10-01

    Empire Hard Chrome has recently installed commercial plasma source ion implantation (PSU) equipment built by North Star Research Corporation. Los Alamos National Laboratory has assisted in this commercialization effort via two Cooperative Research and Development Agreements to develop the plasma source for the equipment and to identify low-risk commercial PSII applications. The PSII system consists of a 1 m x 1 m cylindrical vacuum chamber with a rf plasma source. The pulse modulator is capable of delivering pulses kV and peak currents of 300 A at maximum repetition rate of 400 Hz. thyratron tube to switch a pulse forming network which is tailored to match the dynamic PSII load. In this paper we discuss the PSII system, process facility, and early commercial applications to production tooling.

  5. Plasma immersion ion implantation for reducing metal ion release

    SciTech Connect

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J.

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  6. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon.

    PubMed

    Luo, J; Li, L H; Liu, H T; Yu, K M; Xu, Y; Zuo, X J; Zhu, P Z; Ma, Y F; Fu, Ricky K Y; Chu, Paul K

    2014-06-01

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering. PMID:24985818

  7. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    NASA Astrophysics Data System (ADS)

    Luo, J.; Li, L. H.; Liu, H. T.; Yu, K. M.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Fu, Ricky K. Y.; Chu, Paul K.

    2014-06-01

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  8. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    SciTech Connect

    Luo, J.; Li, L. H. E-mail: paul.chu@cityu.edu.hk; Liu, H. T.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Yu, K. M.; Fu, Ricky K. Y.; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk

    2014-06-15

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  9. Method and apparatus for plasma source ion implantation

    DOEpatents

    Conrad, J.R.

    1988-08-16

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.

  10. Method and apparatus for plasma source ion implantation

    DOEpatents

    Conrad, John R.

    1988-01-01

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

  11. Metal plasma immersion ion implantation and deposition: A review

    SciTech Connect

    Anders, A.

    1996-09-01

    Metal Plasma Immersion Ion Implantation and Deposition (MePIIID) is a hybrid process combining cathodic arc deposition and plasma immersion ion implantation. The properties of metal plasma produced by vacuum arcs are reviewed and the consequences for MePIIID are discussed. Different version of MePIIID are described and compared with traditional methods of surface modification such as ion beam assisted deposition (IBAD). MePIIID is a very versatile approach because of the wide range of ion species and energies used. In one extreme case, films are deposited with ions in the energy range 20--50 eV, and at the other extreme, ions can be implanted with high energy (100 keV or more) without film deposition. Novel features of the technique include the use of improved macroparticle filters; the implementation of several plasma sources for multi-element surface modification; tuning of ion energy during implantation and deposition to tailor the substrate-film intermixed layer and structure of the growing film; simultaneous pulsing of the plasma potential (positive) and substrate bias (negative) with a modified Marx generator; and the use of high ion charge states.

  12. Experiments and Theory of Ablation Plasma Ion Implantation

    NASA Astrophysics Data System (ADS)

    Gilgenbach, R. M.; Qi, B.; Lau, Y. Y.; Johnston, M. D.; Doll, G. L.; Lazarides, A.

    2000-10-01

    Research is underway to accelerate laser ablation plume ions for implantation into substrates. Ablation plasma ion implantation (APII) biases the deposition substrate to a large negative voltage. APII has the advantages of direct acceleration and implantation of ions from metals or any other solid targets. This process is environmentally friendly because it avoids the use of toxic gaseous precursors. Initial experiments are directed towards the implantation of iron ions into silicon substrates at negative voltages from 2-10 kV. A KrF laser ablates iron targets at pulse energies up to 600 mJ and typical repetition rates of 10 Hz. Parameters which can be varied include laser fluence, relative timing of laser and high voltage pulse, and target-to-substrate distance. Spectroscopic diagnostics yield Fe plasma plume electron temperatures up to about 10 eV. Analysis of films will compare surface morphology, hardness and adhesion between deposited Vs accelerated-implanted plumes. A simple one dimensional theory is developed [1] to calculate the implanted ion current, extracted from the ion matrix sheath, as a function of time for various substrate-plume separations. This model accurately recovers Lieberman's classic results when the plume front is initially in contact with the substrate. [1] B. Qi, Y. Y. Lau, and R. M. Gilgenbach, Appl. Phys. Lett. (to be published). * This research is supported by the National Science Foundation.

  13. Plasma Source Ion Implantation of Aluminum and Aluminum Alloys

    NASA Astrophysics Data System (ADS)

    Walter, Kevin Carl

    Three plasma source ion implantation (PSII) schemes applied to three aluminum systems have been studied. Pure aluminum, and aluminum alloys 7075 (Al-Cu-Mg-Zn) and A390 (Al-17Si-Cu-Fe) were (1) argon ion sputter-cleaned and nitrogen-implanted, (2) nitrogen-implanted without sputter -cleaning, and (3) argon-implanted. Nitrogen implantation was performed with the goal of modifying the surface properties by transformation of the surface to aluminum-nitride. Argon implantation was performed with the goal of modifying the surface properties by inducing radiation damage. All implantation schemes were accomplished using a glow discharge mode of the PSII process. Implanted surfaces were investigated using Auger depth profiling and Transmission Electron Microscopy. The profiles indicated a stoichiometric layer, ~ 0.15 μm thick, of AlN on the nitrogen-implanted samples. Electron microscopy confirmed the complete conversion of the aluminum surface to AlN. Knoop microhardness tests showed an increase in surface hardness, especially at low loads. The improvements were independent of prior sputter-cleaning and were approximately equal for the studied aluminum systems. Pin-on-disk wear tests were conducted using a ruby stylus and isopropanol lubrication. Argon implantation decreased the wear resistance of pure aluminum and 7075. Nitrogen implantation improved the wear rates by a factor of ~10 for pure aluminum and 7075. These improvements were independent of prior sputter-cleaning. The coefficient of friction was not significantly influenced by the implantation schemes. Due to a coarse microstructure, tribological tests of ion-implanted A390 were inconclusive. Corrosion studies performed in a 3.5 wt% NaCl solution (seawater) indicated nitrogen implantation gave pure aluminum improved corrosion resistance. The improvement is due to the complete conversion of the aluminum surface to AlN. Because of pre-existing precipitates, the corrosion properties of 7075 and A390 were not

  14. Biologic stability of plasma ion-implanted miniscrews

    PubMed Central

    Cho, Young-Chae; Cha, Jung-Yul; Hwang, Chung-Ju; Park, Young-Chel; Jung, Han-Sung

    2013-01-01

    Objective To gain basic information regarding the biologic stability of plasma ion-implanted miniscrews and their potential clinical applications. Methods Sixteen plasma ion-implanted and 16 sandblasted and acid-etched (SLA) miniscrews were bilaterally inserted in the mandibles of 4 beagles (2 miniscrews of each type per quadrant). Then, 250 - 300 gm of force from Ni-Ti coil springs was applied for 2 different periods: 12 weeks on one side and 3 weeks contralaterally. Thereafter, the animals were sacrificed and mandibular specimens including the miniscrews were collected. The insertion torque and mobility were compared between the groups. The bone-implant contact and bone volume ratio were calculated within 800 µm of the miniscrews and compared between the loading periods. The number of osteoblasts was also quantified. The measurements were expressed as percentages and analyzed by independent t-tests (p < 0.05). Results No significant differences in any of the analyzed parameters were noted between the groups. Conclusions The preliminary findings indicate that plasma ion-implanted miniscrews have similar biologic characteristics to SLA miniscrews in terms of insertion torque, mobility, bone-implant contact rate, and bone volume rate. PMID:23814706

  15. Computer Simulation of Plasma Immersion Ion Implantation and Deposition

    NASA Astrophysics Data System (ADS)

    Miyagawa, Yoshiko; Tanaka, Masaaki; Nakadate, Hiroshi; Nakao, Setsuo; Miyagawa, Soji

    By using a newly developed simulation program "PEGASUS", plasma behavior was analyzed for the plasma immersion ion implantation and deposition (PIII&D). For plasma analysis of low pressure gas which is used in PIII&D, the software uses a particle in cell (PIC) method for the analysis of electric and magnetic fields and the motion of charged particles. A Monte Carlo collision method is used for collisions of ions, electrons and neutrals in the plasma, and the dynamic-SASAMAL code is used for the ion-solid surface interactions. Spatial distributions of potential, electron density and ion density together with the ion flux distribution on the target surface were calculated for the case where a negative pulse voltage was applied to a trench shaped target immersed in a high density Ar plasma (1010 cm-3). The time evolution of sheath length obtained by the simulations for a flat plane part of the surface agreed with the analytical result obtained by the Child-Langmuir method. In a bipolar pulse PIII&D system, a positive and a negative pulse voltages are applied alternately to a workpiece without any other external plasma source. Simulation has been conducted for a target immersed in a very low density Ar plasma (107 cm-3) to compare the plasma generated by a negative and a positive pulse voltage applied to the target. When a negative pulse voltage is applied to the target, only a weak plasma is generated. In contrast to it, when a positive pulse voltage is applied, a two-order or more high density plasma is generated under the same condition. The plasma behavior around a trench shaped target is also presented.

  16. Ablation Plasma Ion Implantation Optimization and Deposition of Compound Coatings

    NASA Astrophysics Data System (ADS)

    Jones, M. C.; Qi, B.; Gilgenbach, R. M.; Johnston, M. D.; Lau, Y. Y.; Doll, G. L.; Lazarides, A.

    2002-10-01

    Ablation Plasma Ion Implantation (APII) utilizes KrF laser ablation plasma plumes to implant ions into pulsed, negatively-biased substrates [1]. Ablation targets are Ti foils and TiN disks. Substrates are Si wafers and Al, biased from 0 to -10 kV. Optimization experiments address: 1) configurations that reduce arcing, 2) reduction of particulate, and 3) deposition/implantation of compounds (e.g. TiN). Arcing is suppressed by positioning the target perpendicular (previously parallel) to the substrate. Thus, bias voltage can be applied at the same time as the KrF laser, resulting in higher ion current. This geometry also yields lower particulate. APII with TiN has the goal of hardened coatings with excellent adhesion. SEM, AFM, XPS, TEM, and scratch tests characterize properties of the thin films. Ti APII films at - 4kV are smoother with lower friction. 1. B. Qi, R.M. Gilgenbach, Y.Y. Lau, M.D. Johnston, J. Lian, L.M. Wang, G. L. Doll and A. Lazarides, APL, 78, 3785 (2001) * Research funded by NSF

  17. Cost estimates for commercial plasma source ion implantation

    SciTech Connect

    Rej, D.J. ); Alexander, R.B. )

    1994-07-01

    A semiempirical model for the cost of a commercial plasma source ion implantation (PSII) facility is presented. Amortized capital and operating expenses are estimated as functions of the surface area throughput [ital T]. The impact of secondary electron emission and batch processing time is considered. Treatment costs are found to decrease monotonically with [ital T] until they saturate at large [ital T] when capital equipment payback and space rental dominate the expense. A reasonably sized PSII treatment facility should be able to treat a surface area of 10[sup 4] m[sup 2] per year at a cost of $0.01 per cm[sup 2].

  18. Magnetic insulation of secondary electrons in plasma source ion implantation

    SciTech Connect

    Rej, D.J.; Wood, B.P.; Faehl, R.J.; Fleischmann, H.H.

    1993-09-01

    The uncontrolled loss of accelerated secondary electrons in plasma source ion implantation (PSII) can significantly reduce system efficiency and poses a potential x-ray hazard. This loss might be reduced by a magnetic field applied near the workpiece. The concept of magnetically-insulated PSII is proposed, in which secondary electrons are trapped to form a virtual cathode layer near the workpiece surface where the local electric field is essentially eliminated. Subsequent electrons that are emitted can then be reabsorbed by the workpiece. Estimates of anomalous electron transport from microinstabilities are made. Insight into the process is gained with multi-dimensional particle-in-cell simulations.

  19. A one-dimensional collisional model for plasma-immersion ion implantation

    SciTech Connect

    Vahedi, V.; Lieberman, M.A.; Alves, M.V.; Verboncoeur, J.P.; Birdsall, C.K. )

    1991-02-15

    Plasma-immersion ion implantation (also known as plasma-source ion implantation) is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A general one-dimensional model is developed to study this process in different coordinate systems for the case in which the pressure of the neutral gas is large enough that the ion motion in the sheath can be assumed to be highly collisional.

  20. Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Zeng, Z. M.; Tian, X. B.; Chu, P. K.

    2003-01-01

    Plasma immersion ion implantation and deposition (PIII-D) offers a non-line-of-sight fabrication method for various types of thin films on steels to improve the surface properties. In this work, titanium films were first deposited on 9Cr18 (AISI440) stainless bearing steel by metal plasma immersion ion implantation and deposition (MePIII-D) using a titanium vacuum arc plasma source. Afterwards, carbon implantation and carbon film deposition were performed by acetylene (C2H2) plasma immersion ion implantation. Multiple-layered structures with superior properties were produced by conducting Ti MePIII-D + C2H2 PIII successively. The composition and structure of the films were investigated employing Auger electron spectroscopy and Raman spectroscopy. It is shown that the mixing for Ti and C atoms is much better when the target bias is higher during Ti MePIII-D. A top diamond-like carbon layer and a titanium oxycarbide layer are formed on the 9Cr18 steel surface. The wear test results indicate that this dual PIII-D method can significantly enhance the wear properties and decrease the surface friction coefficient of 9Cr18 steel.

  1. Numerical Simulation Research in Plasma Technologies 4. PIC-MCC Simulation for Plasma Immersion Ion Implantation Processing

    NASA Astrophysics Data System (ADS)

    Miyagawa, Yoshiko

    Plasma Immersion Ion Implantation (PIII) has been developed as a method for high-flux implantation and conformal implantation on a complex shaped target. In PIII, a negative pulsed high voltage is applied to the target immersed in low-pressure high-density plasma. Then an ion sheath is formed around the target and energetic ions are implanted on the target surface. By increasing the plasma density, conformal implantation is possible. However, this process can not be easily realized for a complex shaped target, for instance which has a trench or holes with high aspectratios. In order to find the best condition in the process, it is very important to know the sheath shape around the target and the energy and flux distributions of implanted ions at each surface point. Plasma behavior in the PIII process has been simulated using “PEGASUS”.

  2. Plasma sheath physics and dose uniformity in enhanced glow discharge plasma immersion ion implantation and deposition

    SciTech Connect

    Li Liuhe; Li Jianhui; Kwok, Dixon T. K.; Chu, Paul K.; Wang Zhuo

    2009-07-01

    Based on the multiple-grid particle-in-cell code, an advanced simulation model is established to study the sheath physics and dose uniformity along the sample stage in order to provide the theoretical basis for further improvement of enhanced glow discharge plasma immersion ion implantation and deposition. At t=7.0 mus, the expansion of the sheath in the horizontal direction is hindered by the dielectric cage. The electron focusing effect is demonstrated by this model. Most of the ions at the inside wall of the cage are implanted into the edge of the sample stage and a relatively uniform ion fluence distribution with a large peak is observed at the end. Compared to the results obtained from the previous model, a higher implant fluence and larger area of uniformity are disclosed.

  3. Experimental investigation of plasma-immersion ion implantation treatment for biocompatible polyurethane implants production

    NASA Astrophysics Data System (ADS)

    Iziumov, R. I.; Beliaev, A. Y.; Kondyurina, I. V.; Shardakov, I. N.; Kondyurin, A. V.; Bilek, M. M.; McKenzie, D. R.

    2016-04-01

    Modification of the surface layer of polyurethane with plasma-immersion ion implantation (PIII) and studying its physical and chemical changes have been discussed in this paper. The goal of the research was to obtain carbonized layer allowing creating biocompatible polyurethane implants. The experiments of PIII treatment in various modes were performed. The investigation of the modified surface characteristics was carried out by observing the kinetics of free surface energy for two weeks after treatment. The regularities between treatment time and the level of free surface energy were detected. The explanation of high energy level was given through the appearance of free radicals in the surface layer of material. The confirmation of the chemical activation of the polyurethane surface after PIII treatment was obtained.

  4. Operations manual for the plasma source ion implantation economics program

    SciTech Connect

    Bibeault, M.L.; Thayer, G.R.

    1995-10-01

    Plasma Source Ion Implantation (PSII) is a surface modification technique for metal. PSIICOSTMODEL95 is an EXCEL-based program that estimates the cost for implementing a PSII system in a manufacturing setting where the number of parts to be processed is over 5,000 parts per day and the shape of each part does not change from day to day. Overall, the manufacturing process must be very well defined and should not change. This document is a self-contained manual for PSIICOSTMODEL95. It assumes the reader has some general knowledge of the technical requirements for PSII. Configuration of the PSII process versus design is used as the methodology in PSIICOSTMODEL95. The reason behind this is twofold. First, the design process cannot be programmed into a computer when the relationships between design variables are not understood. Second, the configuration methodology reduces the number of assumptions that must be programmed into our software. Misuse of results are less likely to occur if the user has fewer assumptions to understand.

  5. Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

    SciTech Connect

    Wengrow, A.B.; Leung, K.N.; Perkins, L.T.; Pickard, D.S.; Rickard, M.; Williams, M.D.; Tucker, M.

    1996-06-01

    The multicusp ion source can produce large volumes of uniform, quiescent, high density plasmas. A plasma chamber suited for plasma immersion ion implantation (PIII) was readily made. Conventional PIII pulses the bias voltage applied to the substrate which is immersed in a CW mode plasma. Here, a method by which the plasma itself is pulsed was developed. Typically pulse lengths of 500 {mu}s are used and are much shorter than that of the substrate voltage pulse (5-15 ms). This approach, together with low gas pressures and low bias voltages, permits the constant energy implantation of an entire wafer simultaneously without glow discharge. Results show that this process can yield implant currents of up to 2.5 mA/cm{sup 2}; thus very short implant times can be achieved. Uniformity of the ion flux is also discussed. As this method can be scaled to any dimension, it can be made to handle any size wafer.

  6. Plasma source ion implantation to increase the adhesion of subsequently deposited coatings

    SciTech Connect

    Wood, B.P.; Walter, K.C.; Taylor, T.N.

    1997-10-01

    In Plasma Source Ion Implantation (PSII) an object is placed in a plasma and pulse biased to a high negative potential, so as to implant the plasma ions into the surface of the object. Although ion implantation, by itself, can yield desirable surface modification, it is even more useful as a method of creating a functionally graded interface between the substrate material and a subsequently deposited coating, which may be produced by altering operating conditions on the same plasma source. Although this interfacial region is very thin - as little as 20 nm - it can greatly increase the adhesion of the deposited coatings. We present here a description of this process, and compare a simulation of the graded interface with an XPS depth profile of the interfacial region for erbium metal implanted into steel.

  7. Effect of plasma immersion ion implantation in TiNi implants on its interaction with animal subcutaneous tissues

    NASA Astrophysics Data System (ADS)

    Lotkov, Aleksandr I.; Kashin, Oleg A.; Kudryavtseva, Yuliya A.; Shishkova, Darya K.; Krukovskii, Konstantin V.; Kudryashov, Andrey N.

    2016-08-01

    Here we investigated in vivo interaction of Si-modified titanium nickelide (TiNi) samples with adjacent tissues in a rat subcutaneous implant model to assess the impact of the modification on the biocompatibility of the implant. Modification was performed by plasma immersion ion processing, which allows doping of different elements into surface layers of complex-shaped articles. The aim of modification was to reduce the level of toxic Ni ions on the implant surface for increasing biocompatibility. We identified a thin connective tissue capsule, endothelial cells, and capillary-like structures around the Si-modified implants both 30 and 90 days postimplantation. No signs of inflammation were found. In conclusion, modification of TiNi samples with Si ions increases biocompatibility of the implant.

  8. Formation of Wear Resistant Steel Surfaces by Plasma Immersion Ion Implantation

    SciTech Connect

    Maendl, S.; Rauschenbach, B.

    2003-08-26

    Plasma immersion ion implantation (PIII) is a versatile and fast method for implanting energetic ions into large and complex shaped three-dimensional objects where the ions are accelerated by applying negative high voltage pulses to a substrate immersed in a plasma. As the line-of-sight restrictions of conventional implanters are circumvented, it results in a fast and cost-effective technology. Implantation of nitrogen at 30 - 40 keV at moderate temperatures of 200 - 400 deg. C into steel circumvents the diminishing thermal nitrogen activation encountered, e.g., in plasma nitriding in this temperature regime, thus enabling nitriding of additional steel grades. Nitride formation and improvement of the mechanical properties after PIII are presented for several steel grades, including AISI 316Ti (food industry), AISI D2 (used for bending tools) and AISI 1095 (with applications in the textile industry)

  9. Computer simulation of plasma for plasma immersed ion implantation and deposition with bipolar pulses

    NASA Astrophysics Data System (ADS)

    Miyagawa, Y.; Ikeyama, M.; Miyagawa, S.; Nakadate, H.

    2003-05-01

    In order to analyze the plasma behavior under the plasma immersion ion implantation and deposition (PIII&D) condition, a newly developed simulation software "PEGASUS" has been used. The spatial distributions of potential, ion and electron density were calculated for trench-shaped target immersed in Ar plasma (1 mTorr, 10 10 cm -3). The obtained time dependence of sheath length agreed with the analytical results based on Child-Langmuir theory. In the bipolar pulse PIII&D system, a positive- and a negative- pulse voltage are applied alternately to a target, instead of negative pulses used in the conventional PIII&D method. Using simulation, the following results were obtained; when a negative pulse voltage is applied to a target, a weak plasma is generated around the target. In contrast, when a positive pulse voltage is applied, a more intense plasma is generated under the same conditions. The results obtained by simulation of the behavior of ions and electrons near a trench-shaped target are presented.

  10. First results from the Los Alamos plasma source ion implantation experiment

    SciTech Connect

    Rej, D.J.; Faehl, R.J.; Gribble, R.J.; Henins, I.; Kodali, P.; Nastasi, M.; Reass, W.A.; Tesmer, J.; Walter, K.C.; Wood, B.P.; Conrad, J.R.; Horswill, N.; Shamim, M.; Sridharan, K.

    1993-12-01

    A new facility is operational at Los Alamos to examine plasma source ion implantation on a large scale. Large workpieces can be treated in a 1.5-m-diameter, 4.6-m-long plasma vacuum chamber. Primary emphasis is directed towards improving tribological properties of metal surfaces. First experiments have been performed at 40 kV with nitrogen plasmas. Both coupons and manufactured components, with surface areas up to 4 m{sup 2}, have been processed. Composition and surface hardness of implanted materials are evaluated. Implant conformality and dose uniformity into practical geometries are estimated with multidimensional particle-in-cell computations of plasma electron and ion dynamics, and Monte Carlo simulations of ion transport in solids.

  11. Voltage dependence of cluster size in carbon films using plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    McKenzie, D. R.; Tarrant, R. N.; Bilek, M. M. M.; Pearce, G.; Marks, N. A.; McCulloch, D. G.; Lim, S. H. N.

    2003-05-01

    Carbon films were prepared using a cathodic arc with plasma immersion ion implantation (PIII). Using Raman spectroscopy to determine cluster size, a comparison is made between cluster sizes at high voltage and a low duty cycle of pulses with the cluster sizes produced at low voltage and a higher duty cycle. We find that for ion implantation in the range 2-20 kV, the cluster size depends more on implantation energy ( E) than implantation frequency ( f), unlike stress relief, which we have previously shown [M.M.M. Bilek, et al., IEEE Trans. in Plasma Sci., Proceedings 20th ISDEIV 1-5 July 2002, Tours, France, Cat. No. 02CH37331, IEEE, Piscataway, NJ, USA, p. 95] to be dependent on the product Ef. These differences are interpreted in terms of a model in which the ion impacts create thermal spikes.

  12. Comparison between conventional and plasma source ion-implanted femoral knee components

    NASA Astrophysics Data System (ADS)

    Chen, A.; Scheuer, J. T.; Ritter, C.; Alexander, R. B.; Conrad, J. R.

    1991-12-01

    Nitrogen ion implantation of Ti-6Al-4V knee joint femoral components was carried out by both plasma source ion implantation (PSII), a non-line of sight technique, and conventional beamline implantation. Implantation using the PSII process was performed on a flat sample as well as a 2×2 square array of components to demonstrate batch processing capability. The retained dose of the flat sample and at different locations on the implanted components was measured by a scanning auger microprobe (SAM). The variation in dose of the PSII treated component was found to be within the SAM error, while the dose at one location on the beamline implanted component was found to be significantly low. For the beamline case, the SAM results show good agreement with the PC profile computer simulation, which includes the angular dependence of sputtering.

  13. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

    DOEpatents

    Fetherston, Robert P. , Shamim, Muhammad M. , Conrad, John R.

    1997-12-02

    Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

  14. Plasma immersion ion implantation for the efficient surface modification of medical materials

    SciTech Connect

    Slabodchikov, Vladimir A. Borisov, Dmitry P. Kuznetsov, Vladimir M.

    2015-10-27

    The paper reports on a new method of plasma immersion ion implantation for the surface modification of medical materials using the example of nickel-titanium (NiTi) alloys much used for manufacturing medical implants. The chemical composition and surface properties of NiTi alloys doped with silicon by conventional ion implantation and by the proposed plasma immersion method are compared. It is shown that the new plasma immersion method is more efficient than conventional ion beam treatment and provides Si implantation into NiTi surface layers through a depth of a hundred nanometers at low bias voltages (400 V) and temperatures (≤150°C) of the substrate. The research results suggest that the chemical composition and surface properties of materials required for medicine, e.g., NiTi alloys, can be successfully attained through modification by the proposed method of plasma immersion ion implantation and by other methods based on the proposed vacuum equipment without using any conventional ion beam treatment.

  15. Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation

    SciTech Connect

    Zschaetzsch, G.; Vandervorst, W.; Hoffmann, T.; Goossens, J.; Everaert, J.-L.; Agua Borniquel, J. I. del; Poon, T.

    2008-11-03

    This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF{sub 3} and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are studied using Secondary Ion Mass Spectrometry, sheet resistance and using four point probe and RsL. Profiles with junction depths ranging from 10-12 nm and sheet resistance values below 800 Ohm/sq are readily achievable.

  16. Influence of annular magnet on discharge characteristics in enhanced glow discharge plasma immersion ion implantation

    SciTech Connect

    Li Liuhe; Wang Zhuo; Lu Qiuyuan; Fu, Ricky K. Y.; Chu, Paul K.; Pang Enjing; Dun Dandan; He Fushun; Li Fen

    2011-01-10

    A permanent annular magnet positioned at the grounded anode alters the discharge characteristics in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). The nonuniform magnetic field increases the electron path length and confines electron motion due to the magnetic mirror effect and electron-neutral collisions thus occur more frequently. The plasma potential and ion density measured by a Langmuir probe corroborate that ionization is improved near the grounded anode. This hybrid magnetic field EGD-PIII method is suitable for implantation of gases with low ionization rates.

  17. Initial operation of a large-scale Plasma Source Ion Implantation experiment

    SciTech Connect

    Wood, B.P.; Henins, I.; Gribble, R.J.; Reass, W.A.; Faehl, R.J.; Nastasi, M.A.; Rej, D.J.

    1993-10-01

    In Plasma Source Ion Implantation (PSII), a workpiece to be implanted is immersed in a weakly ionized plasma and pulsed to a high negative voltage. Plasma ions are accelerated toward the workpiece and implanted in its surface. Experimental PSII results reported in the literature have been for small workpieces. A large scale PSII experiment has recently been assembled at Los Alamos, in which stainless steel and aluminum workpieces with surface areas over 4 m{sup 2} have been implanted in a 1.5 m-diameter, 4.6 m-length cylindrical vacuum chamber. Initial implants have been performed at 50 kV with 20 {mu}s pulses of 53 A peak current, repeated at 500 Hz, although the pulse modulator will eventually supply 120 kV pulses of 60 A peak current at 2 kHz. A 1,000 W, 13.56 MHz capacitively-coupled source produces nitrogen plasma densities in the 10{sup 15} m{sup {minus}3} range at neutral pressures as low as 0.02 mtorr. A variety of antenna configurations have been tried, with and without axial magnetic fields of up to 60 gauss. Measurements of sheath expansion, modulator voltage and current, and plasma density fill-in following a pulse are presented. The authors consider secondary electron emission, x-ray production, workpiece arcing, implant conformality, and workpiece and chamber heating.

  18. Ion Implantation

    NASA Astrophysics Data System (ADS)

    Langouche, G.; Yoshida, Y.

    In this tutorial we describe the basic principles of the ion implantation technique and we demonstrate that emission Mössbauer spectroscopy is an extremely powerful technique to investigate the atomic and electronic configuration around implanted atoms. The physics of dilute atoms in materials, the final lattice sites and their chemical state as well as diffusion phenomena can be studied. We focus on the latest developments of implantation Mössbauer spectroscopy, where three accelerator facilities, i.e., Hahn-Meitner Institute Berlin, ISOLDE-CERN and RIKEN, have intensively been used for materials research in in-beam and on-line Mössbauer experiments immediately after implantation of the nuclear probes.

  19. Radial {sup 32}P ion implantation using a coaxial plasma reactor: Activity imaging and numerical integration

    SciTech Connect

    Fortin, M.A.; Dufresne, V.; Paynter, R.; Sarkissian, A.; Stansfield, B.

    2004-12-01

    Beta-emitting biomedical implants are currently employed in angioplasty, in the treatment of certain types of cancers, and in the embolization of aneurysms with platinum coils. Radioisotopes such as {sup 32}P can be implanted using plasma-based ion implantation (PBII). In this article, we describe a reactor that was developed to implant radioisotopes into cylindrical metallic objects. The plasma first ionizes radioisotopes sputtered from a target, and then acts as the source of particles to be implanted into the biased biomedical device. The plasma therefore plays a major role in the ionization/implantation process. Following a sequence of implantation tests, the liners protecting the interior walls of the reactor were changed and the radioactivity on them measured. This study demonstrates that the radioactive deposits on these protective liners, adequately imaged by radiography, can indicate the distribution of the radioisotopes that are not implanted. The resulting maps give unique information about the activity distribution, which is influenced by the sputtering of the {sup 32}P-containing fragments, their ionization in the plasma, and also by the subsequent ion transport mechanisms. Such information can be interpreted and used to significantly improve the efficiency of the implantation procedure. Using a surface barrier detector, a comparative study established a relationship between the gray scale of radiographs of the liners, and activity measurements. An integration process allows the quantification of the activities on the walls and components of the reactor. Finally, the resulting integral of the {sup 32}P activity is correlated to the sum of the radioactivity amounts that were sputtered from radioactive targets inside the implanter before the dismantling procedure. This balance addresses the issue of security regarding PBII technology and confirms the confinement of the radioactivity inside the chamber.

  20. Metal plasma immersion ion implantation and deposition (MePIIID) on screw-shaped titanium implant: The effects of ion source, ion dose and acceleration voltage on surface chemistry and morphology.

    PubMed

    Kang, Byung-Soo; Sul, Young-Taeg; Jeong, Yongsoo; Byon, Eungsun; Kim, Jong-Kuk; Cho, Suyeon; Oh, Se-Jung; Albrektsson, Tomas

    2011-07-01

    The present study investigated the effect of metal plasma immersion ion implantation and deposition (MePIIID) process parameters, i.e., plasma sources of magnesium and calcium, ion dose, and acceleration voltage on the surface chemistry and morphology of screw-type titanium implants that have been most widely used for osseointegrated implants. It is found that irrespective of plasma ion source, surface topography and roughness showed no differences at the nanometer level; that atom concentrations increased with ion dose but decreased with acceleration voltage. Data obtained from X-ray photoelectron spectroscopy and auger electron spectroscopy suggested that MePIIID process produces 'intermixed' layer of cathodic arc deposition and plasma immersion ion implantation. The MePIIID process may create desired bioactive surface chemistry of dental and orthopaedic implants by tailoring ion and plasma sources and thus enable investigations of the effect of the surface chemistry on bone response. PMID:21334957

  1. Carbon plasma immersion ion implantation of nickel-titanium shape memory alloys.

    PubMed

    Poon, R W Y; Yeung, K W K; Liu, X Y; Chu, P K; Chung, C Y; Lu, W W; Cheung, K M C; Chan, D

    2005-05-01

    Nickel-titanium (NiTi) shape memory alloys possess super-elasticity in addition to the well-known shape memory effect and are potentially suitable for orthopedic implants. However, a critical concern is the release of harmful Ni ions from the implants into the living tissues. We propose to enhance the corrosion resistance and other surface and biological properties of NiTi using carbon plasma immersion ion implantation and deposition (PIII&D). Our corrosion and simulated body fluid tests indicate that either an ion-mixed amorphous carbon coating fabricated by PIII&D or direct carbon PIII can drastically improve the corrosion resistance and block the out-diffusion of Ni from the materials. Our tribological tests show that the treated surfaces are mechanically more superior and cytotoxicity tests reveal that both sets of plasma-treated samples favor adhesion and proliferation of osteoblasts. PMID:15585228

  2. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    SciTech Connect

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  3. Fabrication of Genesis Sample Simulants Using Plasma Source Ion Implantation (PSII)

    NASA Technical Reports Server (NTRS)

    Kuhlman, K. R.

    2002-01-01

    Plasma source ion implantation can be used to fabricate simulant samples for the Genesis mission. These simulants will be needed by investigators to validate sample preparation and analysis techniques for the returned Genesis samples. Additional information is contained in the original extended abstract.

  4. Structure and micro-mechanical properties of helium-implanted layer on Ti by plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Ma, Xinxin; Li, Jinlong; Sun, Mingren

    2008-08-01

    The present paper concentrates on structure and micro-mechanical properties of the helium-implanted layer on titanium treated by plasma-based ion implantation with a pulsed voltage of -30 kV and doses of 3, 6, 9 and 12 × 10 17 ions/cm 2, respectively. X-ray photoelectron spectroscopy and transmission electron microscopy are employed to characterize the structure of the implanted layer. The hardnesses at different depths of the layer were measured by nano-indentation. We found that helium ion implantation into titanium leads to the formation of bubbles with a diameter from a few to more than 10 nm and the bubble size increases with the increase of dose. The primary existing form of Ti is amorphous in the implanted layer. Helium implantation also enhances the ingress of O, C and N and stimulates the formations of TiO 2, Ti 2O 3, TiO, TiC and TiN in the near surface layer. And the amount of the ingressed oxygen is obviously higher than those of nitrogen and carbon due to its higher activity. At the near surface layer, the hardnesses of all implanted samples increases remarkably comparing with untreated one and the maximum hardness has an increase by a factor of up to 3.7. For the samples implanted with higher doses of 6, 9 and 12 × 10 17 He/cm 2, the local displacement bursts are clearly found in the load-displacement curves. For the samples implanted with a lower dose of 3 × 10 17 He/cm 2, there is no obvious displacement burst found. Furthermore, the burst width increases with the increase of the dose.

  5. Plasma source ion implantation research and applications at Los Alamos National Laboratory

    SciTech Connect

    Munson, C.P.; Faehl, R.J.; Henins, I.

    1996-12-31

    Plasma Source Ion Implantation research at Los Alamos Laboratory includes direct investigation of the plasma and materials science involved in target surface modification, numerical simulations of the implantation process, and supporting hardware engineering. Target materials of Al, Cr, Cu-Zn, Mg, Ni, Si, Ti, W, and various Fe alloys have been processed using plasmas produced from Ar, NH{sub 3}, N{sub 2}, CH{sub 4}, and C{sub 2}H{sub 2} gases. Individual targets with surface areas as large as {approximately}4 m{sup 2}, or weighing up to 1200 kg, have been treated in the large LANL facility. In collaboration with General Motors and the University of Wisconsin, a process has been developed for application of hard, low friction, diamond-like-carbon layers on assemblies of automotive pistons. Numerical simulations have been performed using a 2{1/2}-D particle- in-cell code, which yields time-dependent implantation energy, dose, and angle of arrival for ions at the target surface for realistic geometries. Plasma source development activities include the investigation of pulsed, inductively coupled sources capable of generating highly dissociated N{sup +} with ion densities n{sub i} {approximately} 10{sup 11}/cm{sup 3}, at {approximately}100 W average input power. Cathodic arc sources have also been used to produce filtered metallic and C plasmas for implantation and deposition either in vacuum, or in conjunction with a background gas for production of highly adherent ceramic coatings.

  6. From plasma immersion ion implantation to deposition: A historical perspective on principles and trends

    SciTech Connect

    Anders, Andre

    2001-06-14

    Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

  7. Nitrogen mass transfer models for plasma-based low-energy ion implantation

    SciTech Connect

    Zheng, Bocong; Wang, Kesheng; Zhang, Zhipeng; Che, Honglong; Lei, Mingkai

    2015-03-15

    The nitrogen mass transfer process in plasma-based low-energy ion implantation (PBLEII) is theoretically and experimentally studied in order to explore the process mechanism of PBLEII and therefore to optimize the apparatus design and the process conditions. An electron cyclotron resonance (ECR) microwave discharge generates the nitrogen plasma with a high density of 10{sup 11}–10{sup 12} ions/cm{sup 3}, which diffuses downstream to the process chamber along the divergent magnetic field. The nitrogen ions in the plasma implant into the surface and transport to the matrix of an austenitic stainless steel under the low negative pulsed bias of −2 kV at a process temperature of 400 °C. A global plasma model is used to simulate the ECR microwave plasma discharge for a range of working pressures and microwave powers. The fluid models are adopted to calculate the plasma downstream diffusion, the sheath expansion and the low-energy ion implantation on the surface. A nonlinear kinetic discrete model is established to describe the nitrogen transport in the austenitic stainless steel and the results are compared with the experimental measurements. Under an average implantation current density of 0.3–0.6 mA/cm{sup 2}, the surface nitrogen concentration in the range from 18.5 to 29 at. % is a critical factor for the nitrogen transport in the AISI 304 austenitic stainless steel by PBLEII, which accelerates the implanted nitrogen diffusion inward up to 6–12 μm during a nitriding time of 4 h.

  8. Surface modification of polymeric substrates by plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Okuji, S.; Sekiya, M.; Nakabayashi, M.; Endo, H.; Sakudo, N.; Nagai, K.

    2006-01-01

    Plasma-based ion implantation (PBII) as a tool for polymer modification is studied. Polymeric films have good performances for flexible use, such as food packaging or electronic devices. Compared with inorganic rigid materials, polymers generally have large permeability for gases and moisture, which causes packaged contents and devices to degrade. In order to add a barrier function, surface of polymeric films are modified by PBII. One of the advantageous features of this method over deposition is that the modified surface does not have peeling problem. Besides, micro-cracks due to mechanical stress in the modified layer can be decreased. From the standpoint of mass production, conventional ion implantation that needs low-pressure environment of less than 10-3 Pa is not suitable for continuous large-area processing, while PBII works at rather higher pressure of several Pa. In terms of issues mentioned above, PBII is one of the most expected techniques for modification on flexible substrates. However, the mechanism how the barrier function appears by ion implantation is not well explained so far. In this study, various kinds of polymeric films, including polyethyleneterephthalate (PET), are modified by PBII and their barrier characteristics that depend on the ion dose are evaluated. In order to investigate correlations of the barrier function with implanted ions, modified surface is analyzed with X-ray photoelectron spectroscopy (XPS). It is assumed that the diffusion and sorption coefficients are changed by ion implantation, resulting in higher barrier function.

  9. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    SciTech Connect

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  10. Modeling of Inner Surface Modification of a Cylindrical Tube by Plasma-Based Low-Energy Ion Implantation

    NASA Astrophysics Data System (ADS)

    Zheng, Bocong; Wang, Kesheng; Lei, Mingkai

    2015-04-01

    The inner surface modification process by plasma-based low-energy ion implantation (PBLEII) with an electron cyclotron resonance (ECR) microwave plasma source located at the central axis of a cylindrical tube is modeled to optimize the low-energy ion implantation parameters for industrial applications. In this paper, a magnetized plasma diffusion fluid model has been established to describe the plasma nonuniformity caused by plasma diffusion under an axial magnetic field during the pulse-off time of low pulsed negative bias. Using this plasma density distribution as the initial condition, a sheath collisional fluid model is built up to describe the sheath evolution and ion implantation during the pulse-on time. The plasma nonuniformity at the end of the pulse-off time is more apparent along the radial direction compared with that in the axial direction due to the geometry of the linear plasma source in the center and the difference between perpendicular and parallel plasma diffusion coefficients with respect to the magnetic field. The normalized nitrogen plasma densities on the inner and outer surfaces of the tube are observed to be about 0.39 and 0.24, respectively, of which the value is 1 at the central plasma source. After a 5 μs pulse-on time, in the area less than 2 cm from the end of the tube, the nitrogen ion implantation energy decreases from 1.5 keV to 1.3 keV and the ion implantation angle increases from several degrees to more than 40° both variations reduce the nitrogen ion implantation depth. However, the nitrogen ion implantation dose peaks of about 2×1010 - 7×1010 ions/cm2 in this area are 2 - 4 times higher than that of 1.18×1010 ions/cm2 and 1.63×1010 ions/cm2 on the inner and outer surfaces of the tube. The sufficient ion implantation dose ensures an acceptable modification effect near the end of the tube under the low energy and large angle conditions for nitrogen ion implantation, because the modification effect is mainly determined by the

  11. Study of plasma immersion ion implantation into silicon substrate using magnetic mirror geometry

    NASA Astrophysics Data System (ADS)

    Pillaca, E. J. D. M.; Ueda, M.; Kostov, K. G.; Reuther, H.

    2012-10-01

    The effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon substrate has been investigated at low and high pulsed bias voltages. The magnetic field in magnetic bottle configuration was generated by two magnetic coils installed outside the vacuum chamber. The presence of both, electric and magnetic field in PIII creates a system of crossed E × B fields, promoting plasma rotation around the target. The magnetized electrons drifting in crossed E × B fields provide electron-neutral collision. Consequently, the efficient background gas ionization augments the plasma density around the target where a magnetic confinement is achieved. As a result, the ion current density increases, promoting changes in the samples surface properties, especially in the surface roughness and wettability and also an increase of implantation dose and depth.

  12. Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

    NASA Astrophysics Data System (ADS)

    Pentecoste, Lucile; Thomann, Anne-Lise; Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal; Desgardin, Pierre; Barthe, Marie-France

    2016-09-01

    The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (1011-1014 ions.cm2.s-1) and kinetic energies below the W atom displacement threshold (about 500 eV for He+), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

  13. Plasma immersion ion implantation for sub-22 nm node devices: FD-SOI and Tri-Gate

    SciTech Connect

    Duchaine, J.; Milesi, F.; Coquand, R.; Barraud, S.; Reboh, S.; Gonzatti, F.; Mazen, F.; Torregrosa, Frank

    2012-11-06

    Here, we present and discuss the electrical characteristics of fully depleted MOSFET transistors of planar and tridimensional architecture, doped by Plasma Immersion Ion Implantation (PIII) or Beam Line Ion Implantation (BLII). Both techniques delivered similar and satisfactory results in considering the planar architecture. For tri-dimensional Tri-Gate transistors, the results obtained with PIII are superior.

  14. Broad beam ion implanter

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

  15. Broad beam ion implanter

    DOEpatents

    Leung, K.N.

    1996-10-08

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

  16. An All Solid-State Pulsed Power Generator for Plasma Immersion Ion Implantation (PIII)

    NASA Astrophysics Data System (ADS)

    Liu, Kefu; Qiu, Jian; Wu, Yifan

    2009-04-01

    An all solid-state pulsed power generator for plasma immersion ion implantation (PIII) is described. The pulsed power system is based on a Marx circuit configuration and semiconductor switches, which have many advantages in adjustable repetition frequency, pulse width modulation and long serving life compared with the conventional circuit category, tube-based technologies such as gridded vacuum tubes, thyratrons, pulse forming networks and transformers. The operation of PIII with pulse repetition frequencies up to 500 Hz has been achieved at a pulse voltage amplitude from 2 kV to 60 kV, with an adjustable pulse duration from 1 μs to 100 μs. The proposed system and its performance, as used to drive a plasma ion implantation chamber, are described in detail on the basis of the experimental results.

  17. Modification of the properties of vanadium dioxide by plasma-immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Burdyukh, S. V.; Stefanovich, G. B.; Pergament, A. L.; Berezina, O. Ya.; Avdeev, N. A.; Cheremisin, A. B.

    2016-01-01

    The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal-insulator phase transition observed in VO2 films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.

  18. Flexible system for multiple plasma immersion ion implantation-deposition processes

    NASA Astrophysics Data System (ADS)

    Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.; Anders, Andre; Gong, Chunzhi; Yang, Shiqin

    2003-12-01

    Multiple plasma immersion ion implantation-deposition offers better flexibility compared to other thin film deposition techniques with regard to process optimization. The plasmas may be based on either cathodic arc plasmas (metal ions) or gas plasmas (gas ions) or both of them. Processing parameters such as pulsing frequency, pulse duration, bias voltage amplitude, and so on, that critically affect the film structure, internal stress, surface morphology, and other surface properties can be adjusted relatively easily to optimize the process. The plasma density can be readily controlled via the input power to obtain the desirable gas-to-metal ion ratios in the films. The high-voltage pulses can be applied to the samples within (in-duration mode), before (before-duration mode), or after (after-duration mode) the firing of the cathodic arcs. Consequently, dynamic ion beam assisted deposition processes incorporating various mixes of gas and metal ions can be achieved to yield thin films with the desirable properties. The immersion configuration provides to a certain degree the ability to treat components that are large and possess irregular geometries without resorting to complex sample manipulation or beam scanning. In this article we describe the hardware functions of such a system, voltage-current behavior to satisfy the needs of different processes, as well as typical experimental results.

  19. Diamond-like carbon produced by plasma source ion implantation as a corrosion barrier

    SciTech Connect

    Lillard, R.S.; Butt, D.P.; Taylor, T.N.; Walter, K.C.; Nastasi, M.

    1998-03-01

    There currently exists a broad range of applications for which the ability to produce an adherent, hard, wear and, corrosion-resistant coating plays a vital role. These applications include engine components, orthopedic devices, textile manufacturing components, hard disk media, optical coatings, and cutting and machining tools (e.g., punches, taps, scoring dies, and extrusion dies). Ion beam processing can play an important role in all of these technologies. Plasma source ion implantation (PSII) is an emerging technology which has the potential to overcome the limitations of conventional ion implantation by: (1) reducing the time and expense for implanting onto complex shapes and large areas and (2) extending the thickness of the modification zone through ion beam enhanced plasma growth of surface coatings. In PSII, targets are placed directly in a plasma source and then pulse biased to produce a non-line-of-sight process for complex-shaped targets without complex fixturing. If the pulse bias is a relatively high negative potential (20 to 100 kV) ion implantation will result. If however, a low voltage (50--1,200 eV) high duty cycle pulse bias is applied, film deposition from the chamber gas will result, thereby increasing the extent of the surface modification into the 1--10 micron regime. To evaluate the potential for DLC to be used as a corrosion barrier, Electrochemical Impedance Spectroscopy (EIS) and traditional electrochemistry techniques were used to investigate the breakdown mechanism in chloride and nonchloride containing environments. The effect of surface preparation on coating breakdown was also evaluated.

  20. Investigation of dose uniformity on the inner races of bearings treated by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Zeng, Z. M.; Kwok, T. K.; Tian, X. B.; Tang, B. Y.; Chu, P. K.

    1999-07-01

    Plasma immersion ion implantation (PIII) is an effective technique for the surface modification of industrial components possessing an irregular shape. We have recently used PIII to treat a real industrial ball bearing to enhance the surface properties of the race surface on which the balls roll. The implantation dose uniformity along the groove is assessed using theoretical simulation and experiments. The two sets of results agree very well, showing larger doses near the center. However, the highest dose is not observed at the bottom or center of the groove, but rather offset toward the side close to the sample platen when the bearing is placed horizontally. The minimum dose is observed near the edge or corner of the groove and our model indicates that it is due to the more glancing ion incidence as a result of the evolution of the ion sheath near the corner. The dose nonuniformity along the groove surface is about 40% based on our experimental data.

  1. Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

    SciTech Connect

    Ortolland, Claude; Horiguchi, Naoto; Kerner, Christoph; Chiarella, Thomas; Eyben, Pierre; Everaert, Jean-Luc; Hoffmann, Thomas; Del Agua Borniquel, Jose Ignacio; Poon, Tze; Santhanam, Kartik; Porshnev, Peter; Foad, Majeed; Schreutelkamp, Robert; Absil, Philippe; Vandervorst, Wilfried; Felch, Susan

    2008-11-03

    A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I/I). The benefit of P3i comes from the broad angular distribution of the impinging ions thereby doping the poly-silicon gate sidewall as well. Gate capacitance of short channel devices has been measured and clearly shows this improvement. This model is clearly supported by high resolution 2D-carrier profiles using Scanning Spreading Resistance Microscopy (SSRM) which shows this gate sidewall doping. The broad angular distribution also implies a smaller directional sensitivity (to for instance the detailed gate edge shape) and leads to devices which are perfectly balanced, when Source and Drain electrode are switched.

  2. Experiments on plasma immersion ion implantation inside conducting tubes embedded in an external magnetic field

    NASA Astrophysics Data System (ADS)

    Pillaca, E. J. D. M.; Ueda, M.; Reuther, H.; Pichon, L.; Lepienski, C. M.

    2015-12-01

    Tubes of stainless steel (SS) embedded in external magnetic field were used to study the effects of plasma immersion ion implantation (PIII) as a function of their diameter. The study was complemented with and without a grounded auxiliary electrode (AE) placed at the axis of the tube. During the discharge tests in tubes of larger diameter (D = 11 cm), with and without AE, nitrogen gas breakdown was established inside the tube at pressures near 2.0 × 10-2 mbar. Under the same operation conditions, stable plasmas with similar PIII current densities were obtained for both arrangements. Reducing the diameter of the tube (D = 1.5 cm) turned the plasma unstable and made it inappropriate for ion implantation. This situation was solved by supplying gas at higher pressure or using higher magnetic field, without the presence of an AE. Under these conditions, nitrogen PIII treatments of these small diameter tubes were performed but gave not the best implantation results yet. Our results have also shown higher ion implantation current density (16 mA/cm2) in tube of intermediate diameter (D = 4 cm) using AE, compared to largest diameter tube used. In this case, a thick nitrogen layer of about 9 μm was obtained in the SS sample placed inside the tube. As a consequence of this, its structural and mechanical properties were enhanced. These results are attributed to the thermal diffusion promoted by ions hitting the inner wall in a large number due to the presence of the AE and the magnetic field.

  3. Conversion electron Mössbauer spectroscopy of plasma immersion ion implanted H13 tool steel

    NASA Astrophysics Data System (ADS)

    Terwagne, G.; Collins, G. A.; Hutchings, R.

    1994-12-01

    Conversion electron Mössbauer spectroscopy (CEMS) has been used to investigate nitride formation in AISI-H13 tool steel after treatment by plasma immersion ion implantation (PI3) at 350 °C. With only slight variation in the plasma conditions, it is possible to influence the kinetics of nitride precipitation so as to obtain nitrogen concentrations that range from those associated with ɛ-Fe2N through ɛ-Fe3N to γ'-Fe4N. The CEMS results enable a more definite identification of the nitrides than that obtained by glancing-angle X-ray diffraction and nuclear reaction analysis alone.

  4. Surface modification of silicone medical materials by plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Kobayashi, Tomohiro; Yokota, Toshihiko; Kato, Rui; Suzuki, Yoshiaki; Iwaki, Masaya; Terai, Takayuki; Takahashi, Noriyoshi; Miyasato, Tomonori; Ujiie, Hiroshi

    2007-04-01

    Silicone (polydimethylsiloxane) sheets and tubes for medical use were irradiated with inert gas ions using plasma-based ion implantation (PBII). The affinity of the surface with tissue examined by an animal test was improved by the irradiation at optimal conditions. The cell attachment percentage increased at an applied voltage of less than -7.5 kV; however, it decreased at higher voltage. The specimens irradiated at higher voltages were more hydrophobic than unirradiated specimens. The surface became rough with increasing voltage and textures, and small domains appeared. This effect was caused by different etching speeds in the amorphous and crystalline areas.

  5. Simultaneous Sterilization With Surface Modification Of Plastic Bottle By Plasma-Based Ion Implantation

    SciTech Connect

    Sakudo, N.; Ikenaga, N.; Ikeda, F.; Nakayama, Y.; Kishi, Y.; Yajima, Z.

    2011-01-07

    Dry sterilization of polymeric material is developed. The technique utilizes the plasma-based ion implantation which is same as for surface modification of polymers. Experimental data for sterilization are obtained by using spores of Bacillus subtilis as samples. On the other hand we previously showed that the surface modification enhanced the gas barrier characteristics of plastic bottles. Comparing the implantation conditions for the sterilization experiment with those for the surface modification, we find that both sterilization and surface modification are simultaneously performed in a certain range of implantation conditions. This implies that the present bottling system for plastic vessels will be simplified and streamlined by excluding the toxic peroxide water that has been used in the traditional sterilization processes.

  6. Simultaneous Sterilization With Surface Modification Of Plastic Bottle By Plasma-Based Ion Implantation

    NASA Astrophysics Data System (ADS)

    Sakudo, N.; Ikenaga, N.; Ikeda, F.; Nakayama, Y.; Kishi, Y.; Yajima, Z.

    2011-01-01

    Dry sterilization of polymeric material is developed. The technique utilizes the plasma-based ion implantation which is same as for surface modification of polymers. Experimental data for sterilization are obtained by using spores of Bacillus subtilis as samples. On the other hand we previously showed that the surface modification enhanced the gas barrier characteristics of plastic bottles. Comparing the implantation conditions for the sterilization experiment with those for the surface modification, we find that both sterilization and surface modification are simultaneously performed in a certain range of implantation conditions. This implies that the present bottling system for plastic vessels will be simplified and streamlined by excluding the toxic peroxide water that has been used in the traditional sterilization processes.

  7. Enhanced osteogenic activity of poly ether ether ketone using calcium plasma immersion ion implantation.

    PubMed

    Lu, Tao; Qian, Shi; Meng, Fanhao; Ning, Congqin; Liu, Xuanyong

    2016-06-01

    As a promising implantable material, poly ether ether ketone (PEEK) possesses similar elastic modulus to that of cortical bones yet suffers from bio-inertness and poor osteogenic properties, which limits its application as orthopedic implants. In this work, calcium is introduced onto PEEK surface using calcium plasma immersion ion implantation (Ca-PIII). The results obtained from scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) confirm the modified layer with varying contents of calcium are formed on PEEK surfaces. Water contact angle measurements reveal the increasing hydrophobicity of both Ca-PIII treated surfaces. In vitro cell adhesion, viability assay, alkaline phosphatase activity and collagen secretion analyses disclose improved the adhesion, proliferation, and osteo-differentiation of rat bone mesenchymal stem cells (bMSCs) on Ca-PIII treated surfaces. The obtained results indicate that PEEK surface with enhanced osteogenic activity can be produced by calcium incorporation. PMID:26954085

  8. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    NASA Astrophysics Data System (ADS)

    Derbouz, K.; Michel, T.; De Moro, F.; Spiegel, Y.; Torregrosa, F.; Belouet, C.; Slaoui, A.

    2013-09-01

    In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template) using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD) or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  9. Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

    SciTech Connect

    Ray, Ashok; Nori, Rajashree; Bhatt, Piyush; Lodha, Saurabh; Pinto, Richard Rao, Valipe Ramgopal; Jomard, François; Neumann-Spallart, Michael

    2014-11-01

    A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

  10. Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation

    NASA Astrophysics Data System (ADS)

    Zhang, Gu-Ling; Wang, Jiu-Li; Wu, Xing-Fang; Feng, Wen-Ran; Chen, Guang-Liang; Gu, Wei-Chao; Niu, Er-Wu; Fan, Song-Hua; Liu, Chi-Zi; Yang, Si-Ze

    2006-05-01

    A new method named the magnetic glow-arc plasma source ion implantation (MGA-PSII) is proposed for inner surface modification of tubes. In MGA-PSII, under the control of an axial magnetic field, which is generated by an electric coil around the tube sample, glow arc plasma moves spirally into the tube from its two ends. A negative voltage applied on the tube realized its inner surface implantation. Titanium nitride (TiN) films are prepared on the inner surface of a stainless steel tube in diameter 90 mm and length 600 mm. Hardness tests show that the hardness at the tube centre is up to 20 GPa. XRD, XPS and AES analyses demonstrate that good quality of TiN films can be achieved.

  11. Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

    NASA Astrophysics Data System (ADS)

    Sangwijit, K.; Yu, L. D.; Sarapirom, S.; Pitakrattananukool, S.; Anuntalabhochai, S.

    2015-12-01

    Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 1012 to 1 × 1017 ions/cm2 treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

  12. Etching and structural changes in nitrogen plasma immersion ion implanted polystyrene films

    NASA Astrophysics Data System (ADS)

    Gan, B. K.; Bilek, M. M. M.; Kondyurin, A.; Mizuno, K.; McKenzie, D. R.

    2006-06-01

    Plasma immersion ion implantation (PIII), with nitrogen ions of energy 20 keV in the fluence range of 5 × 1014-2 × 1016 ions cm-2, is used to modify 100 nm thin films of polystyrene on silicon wafer substrates. Ellipsometry is used to study changes in thickness with etching and changes in optical constants. Two distinctly different etch rates are observed as the polymer structure is modified. FTIR spectroscopy data reveals the structural changes, including changes in aromatic and aliphatic groups and oxidation and carbonisation processes, occurring in the polystyrene film as a function of the ion fluence. The transformation to a dense amorphous carbon-like material was observed to progress through an intermediate structural form containing a high concentration of Cdbnd C and Cdbnd O bonds.

  13. Effects of carbon dioxide plasma immersion ion implantation on the electrochemical properties of AZ31 magnesium alloy in physiological environment

    NASA Astrophysics Data System (ADS)

    Xu, Ruizhen; Yang, Xiongbo; Zhang, Xuming; Wang, Mei; Li, Penghui; Zhao, Ying; Wu, Guosong; Chu, Paul K.

    2013-12-01

    Plasma immersion ion implantation (PIII) is conducted to improve the intrinsically poor corrosion properties of biodegradable AZ31 magnesium alloy in the physiological environment. Carbon dioxide is implanted into the samples and X-ray photoelectron spectroscopy and scanning electron microscopy are used to characterize the materials. The corrosion properties are systematically studied by potentiodynamic polarization tests in two simulated physiological environments, namely simulated body fluids and cell culture medium. The plasma-implanted materials exhibit a lower initial corrosion rate. Being a gaseous ion PIII technique, conformal ion implantation into an object with a complex shape such as an orthopedic implant can be easily accomplished and CO2 PIII is a potential method to improve the biological properties of magnesium and its alloys in clinical applications.

  14. Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication.

    PubMed

    Wang, Langping; Huang, Lei; Xie, Zhiwen; Wang, Xiaofeng; Tang, Baoyin

    2008-02-01

    The fourth-generation plasma immersion ion implantation and deposition (PIIID) facility for hybrid and batch treatment was built in our laboratory recently. Comparing with our previous PIIID facilities, several novel designs are utilized. Two multicathode pulsed cathodic arc plasma sources are fixed on the chamber wall symmetrically, which can increase the steady working time from 6 h (the single cathode source in our previous facilities) to about 18 h. Meanwhile, the inner diameter of the pulsed cathodic arc plasma source is increased from the previous 80 to 209 mm, thus, large area metal plasma can be obtained by the source. Instead of the simple sample holder in our previous facility, a complex revolution-rotation sample holder composed of 24 shafts, which can rotate around its axis and adjust its position through revolving around the center axis of the vacuum chamber, is fixed in the center of the vacuum chamber. In addition, one magnetron sputtering source is set on the chamber wall instead of the top cover in the previous facility. Because of the above characteristic, the PIIID hybrid process involving ion implantation, vacuum arc, and magnetron sputtering deposition can be acquired without breaking vacuum. In addition, the PIIID batch treatment of cylinderlike components can be finished by installing these components on the rotating shafts on the sample holder. PMID:18315292

  15. Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication

    SciTech Connect

    Wang Langping; Huang Lei; Xie Zhiwen; Wang Xiaofeng; Tang Baoyin

    2008-02-15

    The fourth-generation plasma immersion ion implantation and deposition (PIIID) facility for hybrid and batch treatment was built in our laboratory recently. Comparing with our previous PIIID facilities, several novel designs are utilized. Two multicathode pulsed cathodic arc plasma sources are fixed on the chamber wall symmetrically, which can increase the steady working time from 6 h (the single cathode source in our previous facilities) to about 18 h. Meanwhile, the inner diameter of the pulsed cathodic arc plasma source is increased from the previous 80 to 209 mm, thus, large area metal plasma can be obtained by the source. Instead of the simple sample holder in our previous facility, a complex revolution-rotation sample holder composed of 24 shafts, which can rotate around its axis and adjust its position through revolving around the center axis of the vacuum chamber, is fixed in the center of the vacuum chamber. In addition, one magnetron sputtering source is set on the chamber wall instead of the top cover in the previous facility. Because of the above characteristic, the PIIID hybrid process involving ion implantation, vacuum arc, and magnetron sputtering deposition can be acquired without breaking vacuum. In addition, the PIIID batch treatment of cylinderlike components can be finished by installing these components on the rotating shafts on the sample holder.

  16. Plasma immersion ion implantation of nitrogen into H13 steel under moderate temperatures

    NASA Astrophysics Data System (ADS)

    Ueda, M.; Leandro, C.; Reuther, H.; Lepienski, C. M.

    2005-10-01

    Ion implantation of nitrogen into samples of tempered and quenched H13 steel was carried out by plasma immersion technique. A glow discharge plasma of nitrogen species was the ion source and the negative high voltage pulser provided 10-12 kV, 60 μs duration and 1.0-2.0 kHz frequency, flat voltage pulses. The temperatures of the samples remained between 300 and 450 °C, sustained solely by the ion bombardment. In some of the discharges, we used a N2 + H2 gas mixture with 1:1 ratio. PIII treatments as long as 3, 6, 9 and up to 12 h were carried out to achieve as thickest treated layer as possible, and we were able to reach over 20 μm treated layers, as a result of ion implantation and thermal (and possibly radiation enhanced) diffusion. The nitrogen depth profiles were obtained by GDOS (Glow Discharge Optical Spectroscopy) and the exact composition profiles by AES (Auger Electron Spectroscopy). The hardness of the treated surface was increased by more than 250%, reaching 18.8 GPa. No white layer was seen in this case. A hardness profile was obtained which corroborated a deep hardened layer, confirming the high efficacy of the moderate temperature PIII treatment of steels.

  17. Irradiation influence on Mylar and Makrofol induced by argon ions in a plasma immersion ion implantation system

    NASA Astrophysics Data System (ADS)

    Hassan, A.; El-Saftawy, A. A.; Aal, S. A. Abd El; Ghazaly, M. El

    2015-08-01

    Mylar and Makrofol polycarbonate polymers were irradiated by Ar ions in a plasma immersion ion implantation (PIII) system. The surface wettability of both polymers was investigated by employing the contact angle method. The measured contact angles were found to depend on the surface layer properties. Good wetting surfaces were found to depend not only on surface roughness but also on its chemistry that analyzed by Fourier transform infrared (FTIR) spectroscopy. Surfaces topography and roughness was investigated and correlated to their surface energy which studied with the aid of acid-base model for evaluating the improvement of surface wettability after irradiation. PIII improves polymers surface properties efficiently in a controllable way.

  18. Plasma Immersion Ion Implantation with Solid Targets for Space and Aerospace Applications

    SciTech Connect

    Oliveira, R. M.; Goncalves, J. A. N.; Ueda, M.; Silva, G.; Baba, K.

    2009-01-05

    This paper describes successful results obtained by a new type of plasma source, named as Vaporization of Solid Targets (VAST), for treatment of materials for space and aerospace applications, by means of plasma immersion ion implantation and deposition (PIII and D). Here, the solid element is vaporized in a high pressure glow discharge, being further ionized and implanted/deposited in a low pressure cycle, with the aid of an extra electrode. First experiments in VAST were run using lithium as the solid target. Samples of silicon and aluminum alloy (2024) were immersed into highly ionized lithium plasma, whose density was measured by a double Langmuir probe. Measurements performed with scanning electron microscopy (SEM) showed clear modification of the cross-sectioned treated silicon samples. X-ray photoelectron spectroscopy (XPS) analysis revealed that lithium was implanted/deposited into/onto the surface of the silicon. Implantation depth profiles may vary according to the condition of operation of VAST. One direct application of this treatment concerns the protection against radiation damage for silicon solar cells. For the case of the aluminum alloy, X-ray diffraction analysis indicated the appearance of prominent new peaks. Surface modification of A12024 by lithium implantation/deposition can lower the coefficient of friction and improve the resistance to fatigue of this alloy. Recently, cadmium was vaporized and ionized in VAST. The main benefit of this element is associated with the improvement of corrosion resistance of metallic substrates. Besides lithium and cadmium, VAST allows to performing PIII and D with other species, leading to the modification of the near-surface of materials for distinct purposes, including applications in the space and aerospace areas.

  19. Surface, electrical and mechanical modifications of PMMA after implantation with laser produced iron plasma ions

    NASA Astrophysics Data System (ADS)

    Ahmed, Qazi Salman; Bashir, Shazia; Jalil, Sohail Abdul; Shabbir, Muhammad Kaif; Mahmood, Khaliq; Akram, Mahreen; Khalid, Ayesha; Yaseen, Nazish; Arshad, Atiqa

    2016-07-01

    Laser Produced Plasma (LPP) was employed as an ion source for the modifications in surface, electrical and mechanical properties of poly methyl (methacrylate) PMMA. For this purpose Nd:YAG laser (532 nm, 6 ns, 10 Hz) at a fluence of 12.7 J/cm2 was employed to generate Fe plasma. The fluence and energy measurements of laser produced Fe plasma ions were carried out by employing Thomson Parabola Technique in the presence of magnetic field strength of 0.5 T, using CR-39 as Solid State Nuclear Track Detector (SSNTD). It has been observed that ion fluence ejecting from ablated plasma was maximum at an angle of 5° with respect to the normal to the Fe target surface. PMMA substrates were irradiated with Fe ions of constant energy of 0.85 MeV at various ion fluences ranging from 3.8 × 106 ions/cm2 to 1.8 × 108 ions/cm2 controlled by varying laser pulses from 3000 to 7000. Optical microscope and Scanning Electron Microscope (SEM) were utilized for the analysis of surface features of irradiated PMMA. Results depicted the formation of chain scission, crosslinking, dendrites and star like structures. To explore the electrical behavior, four probe method was employed. The electrical conductivity of ion irradiated PMMA was increased with increasing ion fluence. The surface hardness was measured by shore D hardness tester and results showed the monotonous increment in surface hardness with increasing ion fluence. The increasing trend of surface hardness and electrical conductivity with increasing Fe ion fluence has been well correlated with the surface morphology of ion implanted PMMA. The temperature rise of PMMA surface due to Fe ion irradiation is evaluated analytically and comes out to be in the range of 1.72 × 104 to 1.82 × 104 K. The values of total Linear Energy Transfer (LET) or stopping power of 0.8 MeV Fe ions in PMMA is 61.8 eV/Å and their range is 1.34 μm evaluated by SRIM simulation.

  20. Effect of vacuum ion-plasma treatment on the electrochemical corrosion characteristics of titanium-alloy implants

    NASA Astrophysics Data System (ADS)

    Ilyin, A. A.; Skvortsova, S. V.; Petrov, L. M.; Chernyshova, Yu. V.; Lukina, E. A.

    2007-10-01

    The effect of mechanical polishing and various types of vacuum ion-plasma treatment of model implants made of VT1-0, VT20, and VT6 titanium alloys on their electrochemical corrosion characteristics in a 0.9% NaCl solution (Ringer’s solution) is studied. Ion nitriding and the evaporation of a titanium nitride coating are shown to form a surface structure that provides an increase in the hardness, wear resistance, and corrosion resistance of these implants.

  1. Effect of charge imbalance parameter on LEKW in ion-implanted quantum semiconductor plasmas

    SciTech Connect

    Chaudhary, Sandhya; Yadav, Nishchhal; Ghosh, S.

    2015-07-31

    In this study we present an analytical investigation on the propagation characteristics of electro-kinetic wave modified through quantum correction term and charge imbalance parameter using quantum hydrodynamic model for an ion-implanted semiconductor plasma. The dispersion relation has been analyzed in two distinct velocity regimes. We found that as the number of negative charges resides on the colloids increases, their role become increasing effective. The present investigation is important for understanding of wave and instability phenomena and can be put to various interesting applications.

  2. Nitrogen Plasma Ion Implantation of Al and Ti alloys in the High Voltage Glow Discharge Mode

    NASA Astrophysics Data System (ADS)

    Oliveira, R. M.; Ueda, M.; Rossi, J. O.; Reuther, H.; Lepienski, C. M.; Beloto, A. F.

    2006-11-01

    Enhanced surface properties can be attained for aluminum and its alloys (mechanical and tribological) and Ti6Al4V (mainly tribological) by Plasma Immersion Ion Implantation (PIII) technique. The main problem here, more severe for Al case, is the rapid oxygen contamination even in low O partial pressure. High energy nitrogen ions during PIII are demanded for this situation, in order to enable the ions to pass through the formed oxide layer. We have developed a PIII system that can operate at energies in excess of 50keV, using a Stacked Blumlein (SB) pulser which can nominally provide up to 100 kV pulses. Initially, we are using this system in the High Voltage Glow Discharge (HVGD) mode, to implant nitrogen ions into Al5052 alloy with energies in the range of 30 to 50keV, with 1.5μs duration pulses at a repetition rate of 100Hz. AES, pin-on-disc, nanoindentation measurements are under way but x-ray diffraction results already indicated abundant formation of AlN in the surface for Al5052 treated with this HVGD mode. Our major aim in this PIII experiment is to achieve this difficult to produce stable and highly reliable AlN rich surface layer with high hardness, high corrosion resistance and very low wear rate.

  3. Novel plasma immersion ion implantation and deposition hardware and technique based on high power pulsed magnetron discharge

    SciTech Connect

    Wu Zhongzhen; Tian Xiubo; Shi Jingwei; Wang Zeming; Gong Chunzhi; Yang Shiqin; Chu, Paul K.

    2011-03-15

    A novel plasma immersion ion implantation technique based on high power pulsed magnetron sputtering (HPPMS) discharge that can produce a high density metal plasma is described. The metal plasma is clean and does not suffer from contamination from macroparticles, and the process can be readily scaled up for industrial production. The hardware, working principle, and operation modes are described. A matching circuit is developed to modulate the high-voltage and HPPMS pulses to enable operation under different modes such as simultaneous implantation and deposition, pure implantation, and selective implantation. To demonstrate the efficacy of the system and technique, CrN films with a smooth and dense surface without macroparticles were produced. An excellent adhesion with a critical load of 59.9 N is achieved for the pure implantation mode.

  4. Ta-ion implantation induced by a high-intensity laser for plasma diagnostics and target preparation

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Malinsky, P.; Mackova, A.; Matousek, J.; Torrisi, L.; Slepicka, P.; Ullschmied, J.

    2015-12-01

    The present work is focused on the implantation of Ta ions into silicon substrates covered by a silicon dioxide layer 50-300 nm thick. The implantation is achieved using sub-nanosecond pulsed laser ablation (1015 W/cm2) with the objective of accelerating non-equilibrium plasma ions. The accelerated Ta ions are implanted into the exposed silicon substrates at energies of approximately 20 keV per charge state. By changing a few variables in the laser pulse, it is possible to control the kinetic energy, the yield and the angular distribution of the emitted ions. Rutherford Back-Scattering analysis was performed using 2.0 MeV He+ as the probe ions to determine the elemental depth profiles and the chemical composition of the laser-implanted substrates. The depth distributions of the implanted Ta ions were compared to SRIM 2012 simulations. The evaluated results of energy distribution were compared with online techniques, such as Ion Collectors (IC) and an Ion Energy Analyser (IEA), for a detailed identification of the produced ion species and their energy-to-charge ratios (M/z). Moreover, XPS (X-ray Photon Spectroscopy) and AFM (Atomic Force Microscopy) analyses were carried out to obtain information on the surface morphology and the chemical composition of the modified implanted layers, as these features are important for further application of such structures.

  5. Plasma analysis for the plasma immersion ion implantation processing by a PIC-MCC simulation

    NASA Astrophysics Data System (ADS)

    Miyagawa, Y.; Ikeyama, M.; Miyagawa, S.; Tanaka, M.; Nakadate, H.

    2007-07-01

    In order to analyze the plasma behavior during PIII processing, a computer simulation has been carried out using the simulation software "PEGASUS". The software uses a Particle-in-Cell (PIC) method for the movement of charged particles in the electromagnetic field and a Monte Carlo method for collisions of ions, electrons, and neutrals in the plasma and also a Monte Carlo method to analyze the background gas behavior for a low density gas system. This approach is based on the weighting collision simulation scheme allowing for disparate number densities of different species. The spatial distributions of potential and densities of ions, electrons and radicals in the coating system were calculated together with the flux of ions and electrons on the surface of the object. The gas pressure was 0.01 to 50 Pa and a negative and/or a positive pulse voltage ( V=0.1 to 20 kV) was applied to the object. The calculation is fully self-consistent. A two-dimensional Cartesian and a cylindrical coordinate system were used. The effects of gas pressure, applied voltage, and secondary electron emission coefficient by ion impact ( γ) on the sheath thickness, the spatial distribution of densities of electron, ion, and neutral atoms, the ion flux and its spatial distribution, etc. were studied for PIII processing of a trench shaped object, inner wall of a pipe and a PET bottle.

  6. Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

    SciTech Connect

    Wang, Jer-Chyi Chang, Wei-Cheng; Lai, Chao-Sung; Chang, Li-Chun; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding the W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.

  7. DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

    NASA Technical Reports Server (NTRS)

    Boenke, Myra M.; Wu, M. C.; Wang, Shyh; Clark, William M., Jr.; Stevens, Eugene H.

    1989-01-01

    A static plasma grating has been demonstrated experimentally (Wu et al., 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimizaton of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15/cm experimentally. Therefore, FIB-DBR or FIB-distributed-feedback (DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

  8. Boron doping to diamond and DLC using plasma immersion ion implantation

    SciTech Connect

    Ikegami, T.; Grotjohn; Reinhard, D.; Asmussen, J.

    1997-12-31

    Controlling carriers in diamond by doping is important to realize diamond electronic devices with advanced electrical characteristics. As a doping method the Plasma Immersion Ion Implantation (PIII) has been gathering attention due to its excellence in making shallow, highly doped regions over large areas, and its high dose rate, good dose controllability and isotropic doping properties. The authors have begun to investigate boron doping of diamond, silicon and diamond-like carbon films using PIII. As a doping source they use the plasma sputtering of a solid boron carbide (B{sub 4}C) target instead of toxic gas source like diborane (B{sub 2}H{sub 6}). The B{sub 4}C target of 1-in. diameter and a substrate (Si, diamond or diamond-like carbon film) are located in the downtown region of an ECR plasma produced by the microwave plasma disc reactor (MPDR) filled with 1--5 mTorr Ar gas. In order to sputter the target a negative self bias from {minus}400V to {minus}700V is induced by applying RF (13.56 MHz) power of 50--200W to the target holder. For boron ion implantation, negative pulses of {minus}1kV to {minus}8kV, 1--5{micro}s pulse duration, 1--200Hz repetition rate are applied to the substrate holder using a voltage pulser which consists of high voltage capacitors and MOSFETs. After thermal treatment of the doped materials their electrical resistivity are measured using the four-probe method. Details of both the PIII source and substrate doping experimental results are shown at the meeting.

  9. Mechanical Properties of Plasma Immersion Ion Implanted PEEK for Bioactivation of Medical Devices.

    PubMed

    Wakelin, Edgar A; Fathi, Ali; Kracica, Masturina; Yeo, Giselle C; Wise, Steven G; Weiss, Anthony S; McCulloch, Dougal G; Dehghani, Fariba; Mckenzie, David R; Bilek, Marcela M M

    2015-10-21

    Plasma immersion ion implantation (PIII) is used to modify the surface properties of polyether ether ketone for biomedical applications. Modifications to the mechanical and chemical properties are characterized as a function of ion fluence (treatment time) to determine the suitability of the treated surfaces for biological applications. Young's modulus and elastic recovery were found to increase with respect to treatment time at the surface from 4.4 to 5.2 MPa and from 0.49 to 0.68, respectively. The mechanical properties varied continuously with depth, forming a graded layer where the mechanical properties returned to untreated values deep within the layer. The treated surface layer exhibited cracking under cyclical loads, associated with an increased modulus due to dehydrogenation and cross-linking; however, it did not show any sign of delamination, indicating that the modified layer is well integrated with the substrate, a critical factor for bioactive surface coatings. The oxygen concentration remained unchanged at the surface; however, in contrast to ion implanted polymers containing only carbon and hydrogen, the oxygen concentration within the treated layer was found to decrease. This effect is attributed to UV exposure and suggests that PIII treatments can modify the surface to far greater depths than previously reported. Protein immobilization on PIII treated surfaces was found to be independent of treatment time, indicating that the surface mechanical properties can be tuned for specific applications without affecting the protein coverage. Our findings on the mechanical properties demonstrate such treatments render PEEK well suited for use in orthopedic implantable devices. PMID:26366514

  10. Bio-functionalisation of polyether ether ketone using plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Wakelin, Edgar; Yeo, Giselle; Kondyurin, Alexey; Davies, Michael; McKenzie, David; Weiss, Anthony; Bilek, Marcela

    2015-12-01

    Plasma immersion ion implantation (PIII) is used here to improve the surface bioactivity of polyether ether ketone (PEEK) by modifying the chemical and mechanical properties and by introducing radicals. Modifications to the chemical and mechanical properties are characterised as a function of ion fluence (proportional to treatment time) to determine the suitability of the treated surfaces for biological applications. Radical generation increases with treatment time, where treatments greater than 400 seconds result in a high concentration of long-lived radicals. Radical reactions are responsible for oxidation of the surface, resulting in a permanent increase in the polar surface energy. The nano-scale reduced modulus was found to increase with treatment time at the surface from 4.4 to 5.2 GPa. The macromolecular Young's modulus was also found to increase, but by an amount corresponding to the volume fraction of the ion implanted region. The treated surface layer exhibited cracking under cyclical loads, associated with an increased modulus due to dehydrogenation and crosslinking, however it did not show any sign of delamination, indicating that the modified layer is well integrated with the substrate - a critical factor for bioactive surface coatings to be used in-vivo. Protein immobilisation on the PIII treated surfaces was found to saturate after 240 seconds of treatment, indicating that there is room to tune surface mechanical properties for specific applications without affecting the protein coverage. Our findings indicate that the modification of the chemical and mechanical properties by PIII treatments as well as the introduction of radicals render PEEK well suited for use in orthopaedic implantable devices.

  11. Diamondlike carbon deposition on plastic films by plasma source ion implantation

    NASA Astrophysics Data System (ADS)

    Tanaka, T.; Yoshida, M.; Shinohara, M.; Takagi, T.

    2002-05-01

    Application of pulsed high negative voltage (~10 μs pulse width, 300-900 pulses per second) to a substrate is found to induce discharge, thereby increasing ion current with an inductively coupled plasma source. This plasma source ion beam implantation (PSII) technique is investigated for the pretreatment and deposition of diamond-like carbon (DLC) thin layer on polyethylene terepthalate (PET) film. Pretreatment of PET with N2 and Ar plasma is expected to provide added barrier effects when coupled with DLC deposition, with possible application to fabrication of PET beverage bottles. PSII treatment using N2 and Ar in separate stages is found to change the color of the PET film, effectively increasing near-ultraviolet absorption. The effects of this pretreatment on the chemical bonding of C, H, and O are examined by x-ray photoelectron spectroscopy (XPS). DLC thin film was successfully deposited on the PET film. The surface of the DLC thin layer is observed to be smooth by scanning electron microscopy, and its structure characteristics are examined by XPS and laser Raman spectroscopy. Subsequent processing using acetylene or acetylene and Ar (20%) produced thin carbon layers that are confirmed to be graphite-dominated DLC. Also, this PSII method is employed in order to deposit the DLC layer on the inside surface of the PET bottle and to reduce oxygen permeation rate by 40%.

  12. Enhanced osteoblast responses to poly ether ether ketone surface modified by water plasma immersion ion implantation.

    PubMed

    Wang, Heying; Lu, Tao; Meng, Fanhao; Zhu, Hongqin; Liu, Xuanyong

    2014-05-01

    Poly ether ether ketone (PEEK) offers a set of characteristics superior for human implants; however, its application is limited by the bio-inert surface property. In this work, PEEK surface was modified using single step plasma immersion ion implantation (PIII) treatment with a gas mixture of water vapor as a plasma resource and argon as an ionization assistant. Field emission scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy were used to investigate the microstructure and composition of the modified PEEK surface. The water contact angle and zeta-potential of the surfaces were also measured. Osteoblast precursor cells MC3T3-E1 and rat bone mesenchymal stem cells were cultured on the PEEK samples to evaluate their cytocompatibility. The obtained results show that the hydroxyl groups as well as a "ravined structure" are constructed on water PIII modified PEEK. Compared with pristine PEEK, the water PIII treated PEEK is more favorable for osteoblast adhesion, spreading and proliferation, besides, early osteogenic differentiation indicated by the alkaline phosphatase activity is also up-regulated. Our study illustrates enhanced osteoblast responses to the PEEK surface modified by water PIII, which gives positive information in terms of future biomedical applications. PMID:24632035

  13. Adherent diamond like carbon coatings on metals via plasma source ion implantation

    SciTech Connect

    Walter, K.C.; Nastasi, M.; Munson, C.P.

    1996-12-01

    Various techniques are currently used to produce diamond-like carbon (DLC) coatings on various materials. Many of these techniques use metallic interlayers, such as Ti or Si, to improve the adhesion of a DLC coating to a ferrous substrate. An alternative processing route would be to use plasma source ion implantation (PSII) to create a carbon composition gradient in the surface of the ferrous material to serve as the interface for a DLC coating. The need for interlayer deposition is eliminated by using a such a graded interfaces PSII approach has been used to form adherent DLC coatings on magnesium, aluminum, silicon, titanium, chromium, brass, nickel, and tungsten. A PSII process tailored to create a graded interface allows deposition of adherent DLC coatings even on metals that exhibit a positive heat of formation with carbon, such as magnesium, iron, brass and nickel.

  14. Plasma immersion ion implantation and deposition of DLC coating for modification of orthodontic magnets

    NASA Astrophysics Data System (ADS)

    Wongsarat, W.; Sarapirom, S.; Aukkaravittayapun, S.; Jotikasthira, D.; Boonyawan, D.; Yu, L. D.

    2012-02-01

    This study was aimed to use the plasma immersion ion implantation and deposition (PIII-D) technique to form diamond-like carbon (DLC) thin films on orthodontic magnets to solve the corrosion problem. To search for the optimal material modification effect, PIII-D conditions including gases, processing time, and pulsing mode were varied. The formation of DLC films was confirmed and characterized with Raman spectra. The intensity of the remnant magnetic field of the magnets and the hardness, adhesion and thickness of the thin films were then measured. A corrosion test was carried out using clinic dental fluid. Improved benefits including a satisfying hardness, adhesion, remnant magnetic strength and corrosion resistance of the DLC coating could be achieved by using a higher interrupting time ratio and shorter processing time.

  15. New method of plasma immersion ion implantation and also deposition of industrial components using tubular fixture and plasma generated inside the tube by high voltage pulses

    NASA Astrophysics Data System (ADS)

    Ueda, Mario; Silva, Ataide Ribeiro da; Pillaca, Elver J. D. M.; Mariano, Samantha F. M.; Oliveira, Rogério de Moraes; Rossi, José Osvaldo; Lepienski, Carlos Mauricio; Pichon, Luc

    2016-01-01

    A new method of Plasma Immersion Ion Implantation (PIII) and deposition (PIII and D) for treating industrial components in the batch mode has been developed. A metal tubular fixture is used to allocate the components inside, around, and along the tube, exposing only the parts of each component that are to be ion implanted to the plasma. Hollow cathode-like plasma is generated only inside the tube filled with the desired gas, by applying high negative voltage pulses to the hollow cylindrical fixture which is insulated from the vacuum chamber walls. This is a very convenient method of batch processing of industrial parts by ion implantation, in which a large number of small to medium sized components can be treated by PIII and PIII and D, very quickly, efficiently, and also at low cost.

  16. New method of plasma immersion ion implantation and also deposition of industrial components using tubular fixture and plasma generated inside the tube by high voltage pulses.

    PubMed

    Ueda, Mario; da Silva, Ataide Ribeiro; Pillaca, Elver J D M; Mariano, Samantha F M; Oliveira, Rogério de Moraes; Rossi, José Osvaldo; Lepienski, Carlos Mauricio; Pichon, Luc

    2016-01-01

    A new method of Plasma Immersion Ion Implantation (PIII) and deposition (PIII and D) for treating industrial components in the batch mode has been developed. A metal tubular fixture is used to allocate the components inside, around, and along the tube, exposing only the parts of each component that are to be ion implanted to the plasma. Hollow cathode-like plasma is generated only inside the tube filled with the desired gas, by applying high negative voltage pulses to the hollow cylindrical fixture which is insulated from the vacuum chamber walls. This is a very convenient method of batch processing of industrial parts by ion implantation, in which a large number of small to medium sized components can be treated by PIII and PIII and D, very quickly, efficiently, and also at low cost. PMID:26827328

  17. The effect of ion implantation on the oxidation resistance of vacuum plasma sprayed CoNiCrAlY coatings

    NASA Astrophysics Data System (ADS)

    Jiang, Jie; Zhao, Huayu; Zhou, Xiaming; Tao, Shunyan; Ding, Chuanxian

    2012-11-01

    CoNiCrAlY coatings prepared by vacuum plasma spraying (VPS) were implanted with Nb and Al ions at a fluence of 1017 atoms/cm2. The effects of ion implantation on the oxidation resistance of CoNiCrAlY coatings were investigated. The thermally grown oxide (TGO) formed on each specimen was characterized by XRD, SEM and EDS, respectively. The results showed that the oxidation process of CoNiCrAlY coatings could be divided into four stages and the key to obtaining good oxidation resistance was to remain high enough amount of Al and promote the lateral growth of TGO. The implantation of Nb resulted in the formation of continuous and dense Al2O3 scale to improve the oxidation resistance. The Al implanted coating could form Al2O3 scale at the initial stage, however, the scale was soon broken and TGO transformed to non-protective spinel.

  18. A hybrid model for simulation of secondary electron emission in plasma immersion ion implantation under different pulse rise time

    SciTech Connect

    Navab Safa, N. Ghomi, H.

    2015-02-15

    A hybrid fluid Particle in Cell–Monte Carlo Collision (PiC–MCC) model is presented to study the effect of secondary electron emission on the plasma immersion ion implantation process under different pulse rise time. The model describes the temporal evolution of various parameters of plasma such as ion density, ion velocity, secondary electron density, and secondary electron current for different rise times. A 3D–3 V PiC–MCC model is developed to simulate the secondary electrons which are emitted from the sample surface while the plasma ions and electrons are treated using a 1D fluid model. The simulation results indicate that the secondary electron density and secondary electron current increase as the rise time decreases. The main differences between the results for different rise times are found during the initial phase of the pulse. The results are explained through studying the fundamental parameters of plasma.

  19. Surface modification of biomaterials using plasma immersion ion implantation and deposition

    PubMed Central

    Lu, Tao; Qiao, Yuqin; Liu, Xuanyong

    2012-01-01

    Although remarkable progress has been made on biomaterial research, the ideal biomaterial that satisfies all the technical requirements and biological functions is not available up to now. Surface modification seems to be a more economic and efficient way to adjust existing conventional biomaterials to meet the current and ever-evolving clinical needs. From an industrial perspective, plasma immersion ion implantation and deposition (PIII&D) is an attractive method for biomaterials owing to its capability of treating objects with irregular shapes, as well as the control of coating composition. It is well acknowledged that the physico-chemical characteristics of biomaterials are the decisive factors greatly affecting the biological responses of biomaterials including bioactivity, haemocompatibility and antibacterial activity. Here, we mainly review the recent advances in surface modification of biomaterials via PIII&D technology, especially titanium alloys and polymers used for orthopaedic, dental and cardiovascular implants. Moreover, the variations of biological performances depending on the physico-chemical properties of modified biomaterials will be discussed. PMID:23741609

  20. Plasma-based ion implantation: a valuable technology for the elaboration of innovative materials and nanostructured thin films

    NASA Astrophysics Data System (ADS)

    Vempaire, D.; Pelletier, J.; Lacoste, A.; Béchu, S.; Sirou, J.; Miraglia, S.; Fruchart, D.

    2005-05-01

    Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a brief recapitulation of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and discussed. The elaboration of thin films and the modification of their functional properties by PBII have already been achieved in many fields, such as microelectronics (plasma doping/PLAD), biomaterials (surgical implants, bio- and blood-compatible materials), plastics (grafting, surface adhesion) and metallurgy (hard coatings, tribology), to name a few. The major advantages of PBII processing lie, on the one hand, in its flexibility in terms of ion implantation energy (from 0 to 100 keV) and operating conditions (plasma density, collisional or non-collisional ion sheath), and, on the other hand, in the easy transferrability of processes from the laboratory to industry. The possibility of modifying the composition and physical nature of the films, or of drastically changing their physical properties over several orders of magnitude makes this technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro- or nanostructures. A review of the state of the art in these domains is presented and illustrated through a few selected examples. The perspectives opened up by PBII processing, as well as its limitations, are discussed.

  1. Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

    SciTech Connect

    Wang, Jer-Chyi Hsu, Chih-Hsien; Ye, Yu-Ren; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Characteristics improvement of gadolinium oxide (Gd{sub x}O{sub y}) resistive random access memories (RRAMs) treated by hydrogen plasma immersion ion implantation (PIII) was investigated. With the hydrogen PIII treatment, the Gd{sub x}O{sub y} RRAMs exhibited low set/reset voltages and a high resistance ratio, which were attributed to the enhanced movement of oxygen ions within the Gd{sub x}O{sub y} films and the increased Schottky barrier height at Pt/Gd{sub x}O{sub y} interface, respectively. The resistive switching mechanism of Gd{sub x}O{sub y} RRAMs was dominated by Schottky emission, as proved by the area dependence of the resistance in the low resistance state. After the hydrogen PIII treatment, a retention time of more than 10{sup 4} s was achieved at an elevated measurement temperature. In addition, a stable cycling endurance with the resistance ratio of more than three orders of magnitude of the Gd{sub x}O{sub y} RRAMs can be obtained.

  2. Plasma Immersion Ion Implantation Applied To N+P Junction Realisation In 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ottaviani, Laurent; Biondo, Stéphane; Daineche, Rachid; Palais, Olivier; Milesi, Frédéric; Duchaine, Julian; Torregrosa, Frank

    2011-01-01

    This paper focuses on the process giving rise to Nitrogen introduction into SiC p-type epitaxial layers. Standard ion implantation and PULSION™ processes are performed at two distinct energies (700 eV and 7 keV), followed by an annealing at 1600 °C in a furnace specifically adapted to SiC material, aiming at creating thin n+p junctions. The doping profiles issued from the implantations show an important channeling effect for all samples. Surface roughness and Nitrogen activation after annealing are studied using AFM and Micro-Four Point Probe means, respectively. A better surface morphology is found on plasma-implanted samples, with a higher sheet resistance (in comparison with standard samples) which could either be related to a lower implanted dose and/or to a lower dopant activation.

  3. Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison

    SciTech Connect

    Anders, Andre

    2007-08-28

    The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.

  4. Surface modification of NiTi by plasma based ion implantation for application in harsh environments

    NASA Astrophysics Data System (ADS)

    Oliveira, R. M.; Fernandes, B. B.; Carreri, F. C.; Gonçalves, J. A. N.; Ueda, M.; Silva, M. M. N. F.; Silva, M. M.; Pichon, L.; Camargo, E. N.; Otubo, J.

    2012-12-01

    The substitution of conventional components for NiTi in distinct devices such as actuators, valves, connectors, stents, orthodontic arc-wires, e.g., usually demands some kind of treatment to be performed on the surface of the alloy. A typical case is of biomaterials made of NiTi, in which the main drawback is the Ni out-diffusion, an issue that has been satisfactorily addressed by plasma based ion implantation (PBII). Even though PBII can tailor selective surface properties of diverse materials, usually, only thin modified layers are attained. When NiTi alloys are to be used in the harsh space environment, as is the case of devices designed to remotely release the solar panels and antenna arrays of satellites, e.g., superior mechanical and tribological properties are demanded. For this case the thickness of the modified layer must be larger than the one commonly achieved by conventional PBII. In this paper, new nitrogen PBII set up was used to treat samples of NiTi in moderate temperature of 450 °C, with negative voltage pulses of 7 kV/250 Hz/20 μs, in a process lasting 1 h. A rich nitrogen atomic concentration of 85 at.% was achieved on the near surface and nitrogen diffused at least for 11 μm depth. Tribological properties as well as corrosion resistance were evaluated.

  5. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, K.N.

    1996-09-24

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

  6. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

  7. Effects of long pulse width and high pulsing frequency on surface superhydrophobicity of polytetrafluoroethylene in quasi-direct-current plasma immersion ion implantation

    SciTech Connect

    Kwok, Dixon T. K.; Wang Huaiyu; Yeung, Kelvin W. K.; Chu, Paul K.; Zhang Yumei

    2009-03-01

    Long pulse, high frequency quasi-direct-current (dc) oxygen plasma immersion ion implantation (PIII) is utilized to create a superhydrophobic polytetrafluoroethylene (PTFE) surface with a water contact angle of over 150 deg. This technique allows the use of a high duty cycle without deleterious effects such as extensive sample heating encountered in conventional PIII. Scanning electron microscopy images review submicrometer-nanometer structures on the PTFE surface after long pulse, high frequency PIII indicative of ion implantation. On the other hand, plasma modification is the dominant effect in short pulse, low frequency PIII. Quasi-dc PIII is demonstrated to offer adjustable synergistic plasma and ion beam effects.

  8. Structural phase states in nickel-titanium surface layers doped with silicon by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kashin, Oleg A.; Lotkov, Aleksandr I.; Kudryashov, Andrey N.; Krukovsky, Konstantin V.; Ostapenko, Marina G.; Neiman, Alexey A.; Borisov, Dmitry P.

    2015-10-01

    The paper reports on a study of NiTi-based alloys used for manufacturing self-expanding intravascular stents to elucidate how the technological modes of plasma immersion ion implantation with silicon influence the chemical and phase composition of their surface layers. It is shown that two types of surface structure can be obtained depending on the mode of plasma immersion implantation: quasi-amorphous Si coating and Si-doped surface layer. The Si-doped surface layer contains new phases: a phase structured as the main B2 phase of NiTi but with a lower lattice parameter, R phase, and phase of highly dispersed SiO2 precipitates.

  9. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    SciTech Connect

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  10. Ion implantation into concave polymer surface

    NASA Astrophysics Data System (ADS)

    Sakudo, N.; Shinohara, T.; Amaya, S.; Endo, H.; Okuji, S.; Ikenaga, N.

    2006-01-01

    A new technique for ion implantation into concave surface of insulating materials is proposed and experimentally studied. The principle is roughly described by referring to modifying inner surface of a PET (polyethylene terephthalate) bottle. An electrode that is supplied with positive high-voltage pulses is inserted into the bottle. Both plasma formation and ion implantation are simultaneously realized by the same high-voltage pulses. Ion sheath with a certain thickness that depends on plasma parameters is formed just on the inner surface of the bottle. Since the plasma potential is very close to that of the electrode, ions from the plasma are accelerated in the sheath and implanted perpendicularly into the bottle's inner surface. Laser Raman spectroscopy shows that the inner surface of an ion-implanted PET bottle is modified into DLC (diamond-like carbon). Gas permeation measurement shows that gas-barrier property enhances due to the modification.

  11. The structure and tribological properties of gradient layers prepared by plasma-based ion implantation on 2024 Al alloy

    NASA Astrophysics Data System (ADS)

    Liao, J. X.; Xia, L. F.; Sun, M. R.; Liu, W. M.; Xu, T.; Xue, Q. J.

    2004-02-01

    Using plasma-based ion implantation, two types of gradient layers have been prepared on 2024 Al alloy. One is prepared by N-implantation then C-deposition, the other adds an interlayer composed of a Ti layer and a Ti-N layer between N-implantation and C-deposition. C-deposition is carried out at various implanting voltages or C2H2/H2 ratios. The composition depth profiles of these layers were characterized by x-ray photoelectron spectroscopy. The structure, morphologies and microstructure of the C layers were studied using Raman spectroscopy, atomic force microscope and transmission electron microscope, respectively. The surface hardness was measured with a Knoop tester and a mechanical property microprobe. The dry ball-on-disc wear tests were performed in ambient air. The gradient layer without interlayer is composed of an N-implanted layer rich in AlN and a diamond-like carbon (DLC) layer (film), and the two layers are connected with a C-Al transition layer containing Al4C3. The Ti layer rich in agr -Ti and the N-implanted layer are connected by a Ti-Al transition layer containing TiAl3, while the Ti-N layer rich in TiN and the DLC film are connected by a C-Ti transition layer containing TiC, TiCN, etc. Thus, the gradient layer with interlayers has optimized the gradient structure. DLC films are compact and amorphous, contain high sp3/sp2 ratios and depend on the implanting voltage and the C2H2/H2 ratio. Similarly, these gradient layers exhibit significant improvement in morphologies, surface hardness and tribological properties; the interlayer, the implanting voltage and the C2H2/H2 ratio all have prominent effects on these properties.

  12. dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel

    SciTech Connect

    C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

    2003-06-01

    Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

  13. Dispersion and absorption of longitudinal electro-kinetic wave in ion-implanted GaN semiconductor plasmas

    SciTech Connect

    Soni, Dilip; Sharma, Giriraj; Saxena, Ajay; Jadhav, Akhilesh

    2015-07-31

    An analytical study on propagation characteristics of longitudinal electro-kinetic (LEK) waves is presented. Based on multi-fluid model of plasma, we have derived a dispersion relation for LEK waves in colloid laden GaN semiconductor plasmas. It is assumed that ions are implanted to form colloids in the GaN sample. The colloids are continuously bombarded by the plasma particles and stick on them, but they acquire a net negative charge due to relatively higher mobility of electrons. It is found from the dispersion relation that the presence of charged colloids not only modifies the existing modes but also supports new novel modes of LEKWs. It is hoped that the study would enhance understanding on dispersion and absorption of LEKWs and help in singling out the appropriate configurations in which GaN crystal would be better suited for fabrication of microwave devices.

  14. Revealing the surface origin of green band emission from ZnO nanostructures by plasma immersion ion implantation induced quenching

    SciTech Connect

    Yang, Y.; Sun, X. W.; Tay, B. K.; Cao, Peter H. T.; Wang, J. X.; Zhang, X. H.

    2008-03-15

    Surface defect passivation for ZnO nanocombs (NCBs), random nanowires (RNWs), and aligned nanowires (ANWs) was performed through a metal plasma immersion ion implantation with low bias voltages ranging from 0 to 10 kV, where Ni was used as the modification ion. The depth of surface-originated green band (GB) emission is thus probed, revealing the surface origin of the GB. It is also found that the GB is closely related to oxygen gas content during growth of the nanostructures. The GB origin of NCBs and RNWs grown with higher oxygen content is shallower ({approx}0.5 nm), which can be completely quenched with no bias applied. However, the GB origin of ANWs grown at lower oxygen content is much deeper ({approx}7 nm) with a complete quenching bias of 10 kV. Quenching of the GB can be attributed to passivation of the surface hole or electron trapping sites (oxygen vacancies) by Ni ions.

  15. Cell adhesion and growth on surfaces modified by plasma and ion implantation

    NASA Astrophysics Data System (ADS)

    Araujo, W. W. R.; Teixeira, F. S.; da Silva, G. N.; Salvadori, D. M. F.; Salvadori, M. C.

    2014-04-01

    In this study, we show and discuss the results of the interaction of living CHO (Chinese Hamster Ovary) cells, in terms of adhesion and growth on glass, SU-8 (epoxi photoresist), PDMS (polydimethylsiloxane), and DLC (hydrogen free diamond-like carbon) surfaces. Glass, SU-8, and DLC but not PDMS showed to be good surfaces for cell growth. DLC surfaces were treated by oxygen plasma (DLC-O) and sulfur hexafluoride plasma (DLC-F). After 24 h of cell culture, the number of cells on DLC-O was higher than on DLC-F surface. SU-8 with silver implanted, creating nanoparticles 12 nm below the surface, increased significantly the number of cells per unit area.

  16. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?

    NASA Astrophysics Data System (ADS)

    Kouadri-boudjelthia, E.-A.; Ntsoenzok, E.; Benoit, R.; Regula, G.; Etienne, H.; Michel, T.; Ashok, S.

    2016-01-01

    A low-cost purification technique was evaluated on multicrystalline silicon (mc-Si). It consists of an efficient impurity trapping process involving nanocavities created by plasma immersion ion implantation (PIII). The study consisted of assessing (i) the creation of nanocavities by PIII and (ii) their ability to trap impurities in real conditions (without intentional contamination). Square pieces of p-type mc-Si samples, having a surface of 4 cm2 were used. They were implanted with hydrogen by PIII at 20 kV with a fluence of 5 × 1016 cm-2 and then annealed for 30 min, in the temperature range 673-1273 K. The evolution of shape, size and spatial distribution of nanocavities was studied by transmission electron microscopy and time of flight secondary ion mass spectrometry in order to check both the formation of cavities and to test their ability to getter impurities by either precipitation or chemisorption. Results reveal surprisingly that, despite the triangular as-implanted H profile, nanocavities can be created by H-PIII, evidently because of the multi-energetic and high flux implantation (about 8 × 1013 cm-2 s-1, 40-80 times greater than in conventional implantation) and that they are able to trap various impurities, initially present in mc-Si, such as Fe, Cu and Ni (according to their Gibbs energy), competing with the many existing gettering sites available in mc-Si, such as Si-related precipitates (oxygen, carbon, nitrogen or metal silicides), dislocations and grain boundaries. The area containing the biggest cavities have the highest density of gettering sites, especially for Cu, which can be trapped either by chemisorption (since it has higher binding energy with cavities) or by Cu3Si precipitation since the corresponding volume expansion can be damped by surrounding cavities.

  17. Optical properties and oxidation of carbonized and cross-linked structures formed in polycarbonate by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kosobrodova, E.; Kondyurin, A.; Chrzanowski, W.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2014-06-01

    At ion fluences higher than 5 · 1015 ions/cm2, plasma immersion ion implantation (PIII) of polycarbonate (PC) results in a formation of a carbonized surface layer. The thickness of this layer is close to the depth of ion penetration. A comparison of PIII treated, spin-coated PC films with pre-treatment thicknesses designed to match and exceed the carbonized layer thickness is employed to study the properties of the carbonised layer independently from the less modified underlying structure. At ion fluencies higher than 1016 ions/cm2, the thinner PC film is completely transformed into an amorphous carbon-like material with no traces of the initial PC structure. The thicker films, however, incorporated two layers: a top carbonised layer and a cross-linked layer below. Compared to the two-layered PC film, the completely carbonized layer was found to have a much higher concentration of Cdbnd O bonds and much lower concentration of O-H bonds after exposure to atmospheric oxygen. The refractive index of the thicker PC films PIII treated with high ion fluencies is close to the refractive index of diamond-like carbon. Anomalous dispersion of the refractive index of the thicker PC films is observed after formation of the carbonised layer. The refractive index of the thinner PC film has normal dispersion at all ion fluences. At ion fluences of 2 · 1016 ions/cm2, both PC films were found to have the same etching rate as polystyrene. Washing in dichloromethane had no effect on the carbonised layer but affected the underlying material in the case of the thicker PC films leading to a wrinkled structure up to ion fluences of 2 · 1016 ions/cm2. At this and higher fluence, areas of an ordered island-like structure were observed.

  18. Blood compatibility of titanium-based coatings prepared by metal plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Tsyganov, I.; Maitz, M. F.; Wieser, E.

    2004-07-01

    Titanium with its natural oxide is known to be generally good biocompatible; and therefore, the suitability of some Ti-based coatings as coating for blood-contacting implants is analyzed. Layers of pure Ti, Ti oxynitrides (TiN 1- xO x with x=0.25, 0.50, and 0.75), and Ti oxides were deposited on oxidized Si from a plasma produced by cathodic arc evaporation under addition of N 2 and/or O 2 to the ambient near the substrate. The oxynitrides are crystalline with the fcc structure of TiN up to x=0.25. For x=0.5, a two-phase system of fcc TiN and fcc TiO has been found. In dependence on the deposition parameters, amorphous and crystalline layers (anatase + brookite or rutile) of TiO 2 have been obtained. The rutile layers were doped by implantation of P. The amorphous TiO 2 layers were implanted with Cr. To study the correlation between structure of the coating and blood compatibility, the clotting time of blood plasma as well as the adhesion and activation of blood platelets on the surface was investigated. TiN and oxynitrides showed the longest clotting time compared to rutile. Minimum platelet adhesion has been observed for pure TiO 2. Contrasting tendencies in the dependence of clotting time and platelet adhesion on the microstructure have been stated. However, for P +-doped rutile, both enhanced clotting time and improved platelet adhesion were observed. Platelet adherence and activation always showed similar trends.

  19. Improving the corrosion resistance of nitinol by plasma-immersion ion implantation with silicon for biomedical applications

    NASA Astrophysics Data System (ADS)

    Abramova, P. V.; Korshunov, A. V.; Lotkov, A. I.; Kashin, O. A.; Borisov, D. P.

    2015-11-01

    Cyclic voltammetry and potentiostatic polarization have been applied to study electrochemical behavior and to determine corrosion resistance of nitinol, which surface was modified with silicon using plasma-immersion ion implantation, in 0.9 % NaCl solution and in artificial blood plasma. It was found out that continuous, and also homogeneous in composition thin Si-containing layers are resistant to corrosion damage at high positive potentials in artificial physiological solutions due to formation of stable passive films. Breakdown potential Eb of Si-modified NiTi depends on the character of silicon and Ni distribution at the alloy surface, Eb values amounted to 0.9-1.5 V (Ag/AgCl/KCl sat.) for the alloy samples with continuous Si-containing surface layers and with decreased Ni surface concentration.

  20. Effects of magnetic field on pulse wave forms in plasma immersion ion implantation in a radio-frequency, inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Tong, Honghui; Fu, Ricky K. Y.; Tang, Deli; Zeng, Xuchu; Chu, Paul K.

    2002-09-01

    The time-dependent current wave forms measured using a pulse biased planar electrode in hydrogen radio-frequency (rf), inductively coupled plasma, plasma immersion ion implantation experiments are observed to vary in the presence of an external magnetic field B. Results further indicate that the magnitude of the pulse current is related to the strength and direction of the magnetic field, rf power, and pressure, but the pulse current curves can be primarily correlated with B. The plasma discharges are enhanced in all cases due to magnetic confinement of the electrons, enlargement of the plasma generation volume, and increase in the rf power absorbing efficiency. The plasma density diagnosed by Langmuir probe diminishes in front of the sample chuck with B, whereas the plasma is confined nearby the sidewall of the vacuum chamber at high magnetic field. The high degree of plasma density nonuniformity at high B in front of the sample chuck is not desirable for the processing of planar samples such as silicon wafers and must be compensated. The reduction in the plasma density and plasma density gradient in the sheath can be accounted for by the changes in the pulse current wave forms.

  1. Investigation of plasma immersion ion implantation of nickel-titanium rod by multiple-grid particle-in-cell simulation

    SciTech Connect

    Kwok, Dixon T. K.; Wu, Shuilin; Liu, Xiangmei; Fu, Ricky K. Y.; Chu, Paul K.

    2008-03-01

    A multiple-grid-particle-in-cell numerical method has been developed. This method uses grids of different cell sizes and details are needed in only one part of the simulation region and not others. Hence, there are fewer nodes in the simulation thereby reduced computational time without sacrificing details. In the multiple-grid system, a phenomenon is identified to arise at the interface between two grids and a half-cell weighting method is utilized to solve the weighting issue at the boundary. It is shown that the expression of the change of momentum has no weighting function. This method is employed to numerically simulate the plasma immersion ion implantation process into a nickel titanium rod measuring 50 mm long and 4.8 mm in diameter used in orthopaedic surgery. To conduct more uniform implantation, the NiTi rod is elevated on the sample stage by a metal rod. The nitrogen implantation fluences and depth profiles are simulated and compared to experimental values determined by x-ray photoelectron spectroscopy.

  2. System design and operation of a 100 kilovolt, 2 kilohertz pulse modulator for plasma source ion implantation

    SciTech Connect

    Reass, W.A.

    1994-07-01

    This paper describes the electrical design and operation of a high power modulator system implemented for the Los Alamos Plasma Source Ion Implantation (PSII) facility. To test the viability of the PSII process for various automotive components, the modulator must accept wide variations of load impedance. Components have varying area and composition which must be processed with different plasmas. Additionally, the load impedance may change by large factors during the typical 20 uS pulse, due to plasma displacement currents and sheath growth. As a preliminary design to test the system viability for automotive component implantation, suitable for a manufacturing environment, circuit topology must be able to directly scale to high power versions, for increased component through-put. We have chosen an evolutionary design approach with component families of characterized performance, which should Ion result in a reliable modulator system with component lifetimes. The modulator utilizes a pair of Litton L-3408 hollow beam amplifier tubes as switching elements in a ``hot-deck`` configuration. Internal to the main of planar triode hot deck, an additional pair decks, configured in a totem pole circuit, provide input drive to the L-3408 mod-anodes. The modulator can output over 2 amps average current (at 100 kV) with 1 kW of modanode drive. Diagnostic electronics monitor the load and stops pulses for 100 mS when a load arcs occur. This paper, in addition to providing detailed engineering design information, will provide operational characteristics and reliability data that direct the design to the higher power, mass production line capable modulators.

  3. A study of interface and adhesion of c-BN film on Si(1 0 0) modified by nitrogen plasma based ion implantation technique

    SciTech Connect

    Tian Jingze; Zhang Qing; Xia Lifang; Yoon, S.F.; Ahn, J.; Byon, E.S.; Zhou, Q.; Wang, S.G.; Li, J.Q.; Yang, D.J

    2004-06-08

    Cubic boron nitride (c-BN) films were deposited on Si substrate with poor adhesion using magnetically enhanced active reaction evaporation (ME-ARE). An attempt has been made to enhance the adhesion strength between c-BN film and substrate by nitrogen plasma based ion implantation (PBII) into c-BN film. Nitrogen ion doses range from 5x10{sup 16} to 1x10{sup 17} ions cm{sup -2} at an implant voltage of 50 kV. The nitrogen ion implanted c-BN films were analyzed using FTIR, scratch test, and XPS to investigate the change of structure, adhesion strength of c-BN film, and interfacial mixing between the initial turbostratic BN (t-BN) film layer and substrate caused by nitrogen ion implantation. FTIR spectra showed little change of c-BN phase content in the films under the above implantation conditions but XPS depth elemental profile of N{sup +}-implanted boron nitride films displayed a mixed layer consisting of elements from film and substrate formed at interface. A highly optimized dynamic Monte Carlo program TAMIX was used to simulate the PBII process in a good agreement with above measured depth elemental profile. The scratch test showed that the adhesion strength evaluated in terms of the critical load of N{sup +}-implanted c-BN film was 1.4 times higher than that of as deposited c-BM film.

  4. An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

    NASA Astrophysics Data System (ADS)

    Torrisi, L.; Cutroneo, M.; Mackova, A.; Lavrentiev, V.; Pfeifer, M.; Krousky, E.

    2016-02-01

    The present paper describes measurements of ion implantation by high-intensity lasers in an innovative configuration. The ion acceleration and implantation were performed using the target normal sheath acceleration regime. Highly ionized charged ions were generated and accelerated by the self-consistent electrostatic accelerating field at the rear side of a directly illuminated foil surface. A sub-nanosecond pulsed laser operating at an intensity of about 1016 W cm-2 was employed to irradiate thin foils containing Au atoms. Multi-energy and multi-species ions with energies of the order of 1 MeV per charge state were implanted on exposed substrates of monocrystalline silicon up to a concentration of about 1% Au atoms in the first superficial layers. The target, laser parameters and irradiation conditions play a decisive role in the dynamic control of the characteristics of the ion beams to be implanted. The ion penetration depth, the depth profile, the integral amount of implanted ions and the concentration-depth profiles were determined by Rutherford back-scattering analysis. Ion implantation produces Si nanocrystals and Au nanoparticles and induces physical and chemical modifications of the implanted surfaces.

  5. Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

    PubMed

    Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K Y; Chu, Paul K

    2008-04-01

    A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation. PMID:18447526

  6. Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion implantation

    SciTech Connect

    Liao, L.; Zhang, Z.; Yan, B.; Li, G. P.; Wu, T.; Shen, Z. X.; Yu, T.; Yang, Y.; Cao, H. T.; Chen, L. L.; Tay, B. K.; Sun, X. W.

    2008-10-01

    Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. When the energy of PIII is increased, the resistivity of ZnO decreases from 4x10{sup 2} to 3.3x10{sup -3} {omega} cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75x10{sup 7} A/cm{sup 2}. Therefore, this facile method may provide an inexpensive alternative to tin doped indium oxide as transparent conducting oxide materials.

  7. Haemocompatibility of hydrogenated amorphous carbon (a-C:H) films synthesized by plasma immersion ion implantation-deposition

    NASA Astrophysics Data System (ADS)

    Yang, P.; Kwok, S. C. H.; Chu, P. K.; Leng, Y. X.; Chen, J. Y.; Wang, J.; Huang, N.

    2003-05-01

    Diamond-like-carbon has attracted much attention recently as a potential biomaterial in blood contacting biomedical devices. However, previous reports in this area have not adequately addressed the biocompatibility and acceptability of the materials in blood contacting applications. In this study, hydrogenated amorphous carbon (a-C:H) films were fabricated on silicon wafers (1 0 0) using plasma immersion ion implantation-deposition. A series of a-C:H films with different structures and chemical bonds were fabricated under different substrate voltages. The results indicate that film graphitization is promoted at higher substrate bias. The film deposited at a lower substrate bias of -75 V possesses better blood compatibility than the films at higher bias and stainless steel. Our results suggest two possible paths to improve the blood compatibility, suppression of the endogenic clotting system and reduction of platelet activation.

  8. Ion implantation in silicate glasses

    SciTech Connect

    Arnold, G.W.

    1993-12-01

    This review examines the effects of ion implantation on the physical properties of silicate glasses, the compositional modifications that can be brought about, and the use of metal implants to form colloidal nanosize particles for increasing the nonlinear refractive index.

  9. Diffusion, trapping, and isotope exchange of plasma implanted deuterium in ion beam damaged tungsten

    NASA Astrophysics Data System (ADS)

    Barton, Joseph Lincoln

    Tritium accumulation in nuclear fusion reactor materials is a major concern for practical and safe fusion energy. This work examines hydrogen isotope exchange as a tritium removal technique, analyzes the effects of neutron damage using high energy copper ion beams, and introduces a diffusion coefficient that is a function of the concentration of trapped atoms. Tungsten samples were irradiated with high energy (0.5 - 5 MeV) copper ions for controlled levels of damage - 10-3 to 10-1 displacements per atom (dpa) - at room temperature. Samples were then exposed to deuterium plasma at constant temperature (˜ 380 K) to a high fluence of 1024 ions/m2, where retention is at is maximized (i.e. saturated). By then subsequently exposing these samples to fractions of this fluence with hydrogen plasma, isotope exchange rates were observed. The resulting deuterium still trapped in the tungsten is then measured post mortem. Nuclear reaction analysis (NRA) gives the depth resolved deuterium retention profile with the 3He(D,p) 4He reaction, and thermal desorption spectroscopy (TDS) gives the total amount of deuterium trapped in the tungsten by heating a sample in vacuum up to 1200 K and measuring the evaporated gas molecules with a residual gas analyzer. Isotope exchange data show that hydrogen atoms can displace trapped deuterium atoms efficiently only up to the first few microns, but does not affect the atoms trapped at greater depths. In ion damaged tungsten, measurements showed a significant increase in retention in the damage region proportional to dpa 0.66, which results in a significant spike in total retention, and isotope exchange in damaged samples is still ineffective at depths greater than a few microns. Thus, isotope exchange is not an affective tritium removal technique; however, these experiments have shown that trapping in material defects greatly affects diffusion. These experiments lead to a simplified diffusion model with defect densities as the only free

  10. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  11. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  12. Effects of oxygen plasma source ion implantation on microstructure evolution and mechanical properties of nickel-titanium shape memory alloy

    NASA Astrophysics Data System (ADS)

    Tan, Lizhen

    Near-equiatomic NiTi is an important shape memory alloy used in both medical and non-medical applications, which are dependent upon the surface characteristics of NiTi. The work presented here is the first use of plasma source ion implantation with oxygen as the incident species to modify the surface structure of NiTi shape memory alloy. Two levels of voltage bias and three levels of ion dose were employed to investigate the effect of processing parameters on surface microstructure and surface-related properties. Several surface analytical techniques, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM), were employed to analyze the effects of the surface modification on surface characteristics including oxide thickness, oxide constitution, phase distribution, morphology and topography. A two-layer surface structure consisting of an oxide layer and a precipitate accommodation layer was observed on modified NiTi. The surface morphology, roughness and hydrophilicity, which are considered to play important roles in affecting protein adsorption behavior, were found to be altered by surface modification. The effects of surface modification on surface-related properties including corrosion resistance, hardness and wear resistance were evaluated by cyclic potentiodynamic polarization tests, Knoop hardness microindentation and fretting wear tests, respectively. The optimum corrosion and wear resistance of NiTi were achieved with ion implantation under high bias and moderate dose. Archard's equation was modified by incorporating the pseudoelasticity effect on wear resistance in addition to hardness. The modified Archard's equation better describes the fretting wear resistance of NiTi. A combination of nanoindentation and AES was employed to understand the relationship between mechanical properties and composition of the modified material.

  13. Ion implantation at elevated temperatures

    SciTech Connect

    Lam, N.Q.; Leaf, G.K.

    1985-11-01

    A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al and Si ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.

  14. Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

    NASA Astrophysics Data System (ADS)

    Tóth, A.; Veres, M.; Kereszturi, K.; Mohai, M.; Bertóti, I.; Szépvölgyi, J.

    2011-08-01

    The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He + ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm -1, testifying to the intense formation of amorphous carbon. The area ratio of the D (˜1410 cm -1) to G (˜1570 cm -1) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.

  15. Study rationale and protocol: prospective randomized comparison of metal ion concentrations in the patient's plasma after implantation of coated and uncoated total knee prostheses

    PubMed Central

    Lützner, Jörg; Dinnebier, Gerd; Hartmann, Albrecht; Günther, Klaus-Peter; Kirschner, Stephan

    2009-01-01

    Background Any metal placed in a biological environment undergoes corrosion. Thus, with their large metallic surfaces, TKA implants are particularly prone to corrosion with subsequent release of metal ions into the human body which may cause local and systemic toxic effects and hypersensitivity reactions, and increase cancer risk. To address this problem, a new 7-layer zirconium coating developed especially for cobalt-chrome orthopaedic implants was tested biomechanically and found to lower metal ion release. The purpose of the proposed clinical trial is to compare the metal ion concentration in patients' plasma before and after implantation of a coated or uncoated TKA implant. Methods/Design In this randomised controlled trial, 120 patients undergoing primary TKA will be recruited at the Department of Orthopaedic Surgery of the University Hospital in Dresden, Germany, and randomised to either the coated or uncoated prosthesis. Outcome assessments will be conducted preoperatively and at 3 months, 12 months and 5 years postoperatively. The primary clinical endpoint will be the chromium ion concentration in the patient's plasma after 1 and 5 years. Secondary outcomes include cobalt, molybdenum and nickel ion concentrations after 1 and 5 years, allergy testing for hypersensitivity against one of these metals, the Knee Society Score to assess clinical and physical function of the knee joint, the self-assessment Oxford Score and the Short Form 36 quality of live questionnaire. Discussion The metal ion concentration in the patient's plasma has been shown to increase after TKA, its eventual adverse effects being widely debated. In the light of this discussion, ways to reduce metal ion release from orthopaedic implants should be studied in detail. The results of this investigation may lead to a new method to achieve this goal. Trials register Clinicaltrials registry NCT00862511 PMID:19828019

  16. Metal Ion Sources for Ion Beam Implantation

    SciTech Connect

    Zhao, W. J.; Zhao, Z. Q.; Ren, X. T.

    2008-11-03

    In this paper a theme touched upon the progress of metal ion sources devoted to metal ion beam implantation (MIBI) will be reviewed. A special emphasis will be given to some kinds of ion sources such as ECR, MEVVA and Cluster ion sources. A novel dual hollow cathode metal ion source named DUHOCAMIS will be introduced and discussed.

  17. Two-wavelength Raman study of poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

    NASA Astrophysics Data System (ADS)

    Veres, M.; Tóth, A.; Mohai, M.; Bertóti, I.; Szépvölgyi, J.; Tóth, S.; Himics, L.; Koós, M.

    2012-12-01

    The surface of poly(ethylene terephthalate) (PET) was modified by helium plasma-based ion implantation (He PBII). The untreated and surface modified samples were characterised with optical absorption spectroscopy and two-wavelength micro-Raman spectroscopy excited with 488 nm and 785 nm light sources, allowing to examine the chemical bonding configuration of the surface layers on different depths and by selective enhancement of vibrations of different structural units. Upon treatment, simultaneously with the development of the broad D and G bands, a gradual decrease of the peaks corresponding to the Cdbnd C stretching and Cdbnd O stretching modes were observed with both excitations. Downshifting and broadening were detected for the Cdbnd C peak with both excitations and also for the Cdbnd O peak with the 488 nm excitation due to formation of condensed aromatic rings. Oppositely, upshifting was found with 785 nm excitation for the Cdbnd O peak and especially for its broad shoulder newly developed at the high wavenumber side. The latter feature was assigned to Cdbnd O groups attached to polymer chains without conjugation and the bands behaviour was interpreted by breaking of the Cdbnd C bonds of the polymer, leading to the formation of a crosslinked, disordered and stressed structure with still intact Cdbnd O groups, due to the increased nuclear damage at the end of the ion track.

  18. Bioactivity of plasma implanted biomaterials

    NASA Astrophysics Data System (ADS)

    Chu, Paul K.

    2006-01-01

    Plasma immersion ion implantation and deposition (PIII&D) is an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification of biomedical materials is described. NiTi alloys have unique super-elastic and shape memory properties and are suitable for orthopedic implants but the leaching of toxic Ni may pose health hazards in humans. We have recently investigated the use of acetylene, oxygen and nitrogen PIII&D to prevent out-diffusion of nickel and good results have been obtained. Silicon is the most important material in the microelectronics industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PIII into silicon to improve the surface bioactivity and observed biomimetic growth of apatite on the surface in simulated body fluids. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness and by incorporation of elements such as nitrogen and phosphorus, the surface blood compatibility can be improved. The properties as well as in vitro biological test results are discussed in this article.

  19. Improved hydrogen ionization rate in enhanced glow discharge plasma immersion ion implantation by enlarging the interaction path using an insulating tube

    SciTech Connect

    Wang Zhuo; Zhu Ying; Li Liuhe; He Fushun; Dun Dandan; Li Fen; Lu Qiuyuan; Fu, Ricky K. Y.; Chu, Paul K.

    2011-02-15

    A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.

  20. Tungsten contamination in ion implantation

    NASA Astrophysics Data System (ADS)

    Polignano, M. L.; Barbarossa, F.; Galbiati, A.; Magni, D.; Mica, I.

    2016-06-01

    In this paper the tungsten contamination in ion implantation processes is studied by DLTS analysis both in typical operating conditions and after contamination of the implanter by implantation of wafers with an exposed tungsten layer. Of course the contaminant concentration is orders of magnitude higher after contamination of the implanter, but in addition our data show that different mechanisms are active in a not contaminated and in a contaminated implanter. A moderate tungsten contamination is observed also in a not contaminated implanter, however in that case contamination is completely not energetic and can be effectively screened by a very thin oxide. On the contrary, the contamination due to an implantation in a previously contaminated implanter is reduced but not suppressed even by a relatively thick screen oxide. The comparison with SRIM calculations confirms that the observed deep penetration of the contaminant cannot be explained by a plain sputtering mechanism.

  1. Graphene synthesis by ion implantation

    NASA Astrophysics Data System (ADS)

    Garaj, Slaven; Hubbard, William; Golovchenko, J. A.

    2010-11-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate.

  2. Graphene synthesis by ion implantation.

    PubMed

    Garaj, Slaven; Hubbard, William; Golovchenko, J A

    2010-11-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate. PMID:21124725

  3. Graphene synthesis by ion implantation

    PubMed Central

    Garaj, Slaven; Hubbard, William; Golovchenko, J. A.

    2010-01-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate. PMID:21124725

  4. Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

    SciTech Connect

    Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Chu, Paul K.

    2006-03-27

    Rectifying undoped and nitrogen-doped ZnO/p-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n{approx}10{sup 19} cm{sup -3}) and highly resistive (resistivity {approx}10{sup 5} {omega} cm), respectively. While forward biasing the undoped-ZnO/p-Si, the current follows Ohmic behavior if the applied bias V{sub forward} is larger than {approx}0.4 V. However, for the nitrogen-doped-ZnO/p-Si sample, the current is Ohmic for V{sub forward}<1.0 V and then transits to J{approx}V{sup 2} for V{sub forward}>2.5 V. The transport properties of the undoped-ZnO/p-Si and the N-doped-ZnO/p-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively.

  5. Residual stress analysis of TiN film fabricated by plasma immersion ion implantation and deposition process

    NASA Astrophysics Data System (ADS)

    Liu, Hongxi; Xu, Qian; Zhang, Xiaowei; Wang, Chuanqi; Tang, Baoyin

    2013-02-01

    Titanium nitride (TiN) films were fabricated on AISI52100 bearing steel surface employing a hybrid plasma immersion ion implantation and deposition (PIIID) technique. The chemical composition, morphology and microstructure of TiN films were characterized by atomic force microscope (AFM), energy dispersive spectrometer (EDS), scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. The residual stress of TiN films under different deposition parameter conditions were measured by means of glazing incidence angle X-ray diffraction (GIXRD) method. The influence of film thickness and X-ray glazing incidence angle on residual stress were investigated. AFM observation reveals that the TiN films have extremely smooth surface, high uniformity and efficiency of space filling over large areas. XRD analysis results indicate that TiN phase exists in the surface modified layer and exhibits a preferred orientation with the (2 0 0) plane. The GIXRD data shows that the residual stress in as-deposited TiN films is compressive stress, and the residual stress value decreases with the film thickness and increases with the glazing incidence angle. The compressive stress reduces from 2.164 GPa to 1.163 GPa, which corresponds to the film thickness from 1.5 μm to 4.5 μm, respectively. Reasonably selecting PIIID process parameters for TiN films fabrication, the residual stress in the film can be controlled effectively.

  6. Highly Stripped Ion Sources for MeV Ion Implantation

    SciTech Connect

    Hershcovitch, Ady

    2009-06-30

    manufacturing industry by lowering power consumption by as much as 30 kW per ion implanter. Major problem was meeting commercialization goals did not succeed for the following reasons (which were discovered after R&D completion): record output of high charge state phosphorous would have thermally damage wafers; record high charge state of antimony requires tool (ion implanting machine in ion implantation jargon) modification, which did not make economic sense due to the small number of users. High fraction boron ion was delivered to PVI client Axcelis for retrofit and implantation testing; the source could have reduced beam preinjector power consumption by a factor of 3.5. But, since the source generated some lithium (though in miniscule amounts); last minute decision was made not to employ the source in implanters. An additional noteworthy reason for failure to commercialize is the fact that the ion implantation manufacturing industry had been in a very deep bust cycle. BNL, however, has benefited from advances in high-charge state ion generation, due to the need high charge state ions in some RHIC preinjectors. Since the invention of the transistor, the trend has been to miniaturize semiconductor devices. As semiconductors become smaller (and get miniaturized), ion energy needed for implantation decreases, since shallow implantation is desired. But, due to space charge (intra-ion repulsion) effects, forming and transporting ion beams becomes a rather difficult task. A few small manufacturers of low quality semiconductors use plasma immersion to circumvent the problem. However, in plasma immersion undesired plasma impurity ions are also implanted; hence, the quality of those semiconductors is poor. For high quality miniature semiconductor manufacturing, pure, low energy ion beams are utilized. But, low energy ion implanters are characterized by low current (much lower than desirable) and, therefore, low production rates. Consequently, increasing the current of pure low energy

  7. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  8. Plasma-implantation-based surface modification of metals with single-implantation mode

    NASA Astrophysics Data System (ADS)

    Tian, X. B.; Cui, J. T.; Yang, S. Q.; Fu, Ricky K. Y.; Chu, Paul K.

    2004-12-01

    Plasma ion implantation has proven to be an effective surface modification technique. Its biggest advantage is the capability to treat the objects with irregular shapes without complex manipulation of target holder. Many metal materials such as aluminum, stainless steel, tool steel, titanium, magnesium etc, has been treated using this technique to improve their wear-resistance, corrosion-resistance, fatigue-resistance, oxidation-resistance, bio-compatiblity etc. However in order to achieve thicker modified layers, hybrid processes combining plasma ion implantation with other techniques have been frequently employed. In this paper plasma implantation based surface modification of metals using single-implantation mode is reviewed.

  9. Carbon, nitrogen, and oxygen ion implantation of stainless steel

    SciTech Connect

    Rej, D.J.; Gavrilov, N.V.; Emlin, D.

    1995-12-31

    Ion implantation experiments of C, N, and O into stainless steel have been performed, with beam-line and plasma source ion implantation methods. Acceleration voltages were varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm{sup 2}. Implanted doses ranged from 0.5 to 3 {times} 10{sup 18}cm{sup -2}, while workpiece temperatures were maintained between 25 and 800 C. Implant concentration profiles, microstructure, and surface mechanical properties of the implanted materials are reported.

  10. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

    NASA Astrophysics Data System (ADS)

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-08-01

    ZnMgO thin films deposited on <100> Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of <101¯0> and <101¯3> peaks for all the samples. However, in case of the annealed samples, the <0002> peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton-exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton-exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  11. Development of a microwave ion source for ion implantations.

    PubMed

    Takahashi, N; Murata, H; Kitami, H; Mitsubori, H; Sakuraba, J; Soga, T; Aoki, Y; Katoh, T

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P(+) beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas. PMID:26932118

  12. Development of a microwave ion source for ion implantations

    NASA Astrophysics Data System (ADS)

    Takahashi, N.; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T.

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P+ beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P+ beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.

  13. Influence of sputter rate and crystal orientation on the distribution of carbon in polycrystalline copper surfaces treated by plasma immersion ion implantation

    SciTech Connect

    Flege, S.; Kraft, G.; Bruder, E.; Ensinger, W.; Baba, K.; Hatada, R.

    2009-07-15

    The sputter rate influences the resulting thickness of the carbon containing layer within a surface that was treated by plasma immersion ion implantation. Choosing a polycrystalline substrate with rather large crystals and a material with an inherent high sputter rate, inhomogeneous distributions of carbon over the substrate area due to different thicknesses of the incorporated carbon can be detected. A correlation of three factors namely the carbon x-ray intensity in electron probe microanalysis, the thickness of the carbon layer, and the sputter rate in depth profiling measurements via secondary ion mass spectrometry can be shown. Essential for these factors is the crystal orientation that is visualized by mapping via electron backscatter diffraction. The differences in carbon content due to the orientation are most likely one of the reasons that the adhesion of diamond-like carbon films on copper does not improve with an interlayer of implanted carbon.

  14. Mutation breeding by ion implantation

    NASA Astrophysics Data System (ADS)

    Yu, Zengliang; Deng, Jianguo; He, Jianjun; Huo, Yuping; Wu, Yuejin; Wang, Xuedong; Lui, Guifu

    1991-07-01

    Ion implantation as a new mutagenic method has been used in the rice breeding program since 1986, and for mutation breeding of other crops later. It has been shown, in principle and in practice, that this method has many outstanding advantages: lower damage rate; higher mutation rate and wider mutational spectrum. Many new lines of rice with higher yield rate; broader disease resistance; shorter growing period but higher quality have been bred from ion beam induced mutants. Some of these lines have been utilized for the intersubspecies hybridization. Several new lines of cotton, wheat and other crops are now in breeding. Some biophysical effects of ion implantation for crop seeds have been studied.

  15. Ion implanted dielectric elastomer circuits

    NASA Astrophysics Data System (ADS)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  16. In-situ deposition of sacrificial layers during ion implantation

    SciTech Connect

    Anders, A.; Anders, S.; Brown, I.G.; Yu, K.M.

    1995-02-01

    The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase.

  17. Improvements of anti-corrosion and mechanical properties of NiTi orthopedic materials by acetylene, nitrogen and oxygen plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Poon, Ray W. Y.; Ho, Joan P. Y.; Liu, Xuanyong; Chung, C. Y.; Chu, Paul K.; Yeung, Kelvin W. K.; Lu, William W.; Cheung, Kenneth M. C.

    2005-08-01

    Nickel-titanium shape memory alloys (NiTi) are useful materials in orthopedics and orthodontics due to their unique super-elasticity and shape memory effects. However, the problem associated with the release of harmful Ni ions to human tissues and fluids has been raising safety concern. Hence, it is necessary to produce a surface barrier to impede the out-diffusion of Ni ions from the materials. We have conducted acetylene, nitrogen and oxygen plasma immersion ion implantation (PIII) into NiTi alloys in an attempt to improve the surface properties. All the implanted and annealed samples surfaces exhibit outstanding corrosion and Ni out-diffusion resistance. Besides, the implanted layers are mechanically stronger than the substrate underneath. XPS analyses disclose that the layer formed by C2H2 PIII is composed of mainly TiCx with increasing Ti to C concentration ratios towards the bulk. The nitrogen PIII layer is observed to be TiN, whereas the oxygen PIII layer is composed of oxides of Ti4+, Ti3+ and Ti2+.

  18. A novel method for effective sodium ion implantation into silicon

    SciTech Connect

    Lu Qiuyuan; Chu, Paul K.

    2012-07-15

    Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na{sub 2}O-SiO{sub 2} bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.

  19. Co(II)-mediated effects of plain and plasma immersion ion implanted cobalt-chromium alloys on the osteogenic differentiation of human mesenchymal stem cells.

    PubMed

    Schröck, Kathleen; Lutz, Johanna; Mändl, Stephan; Hacker, Michael C; Kamprad, Manja; Schulz-Siegmund, Michaela

    2015-03-01

    Medical CoCr is one of the main alloys used for metal-on-metal prosthesis in patients with total hip arthroplasty. CoCr surfaces modified by nitrogen plasma immersion ion implantation (PIII) are characterized by improved wear resistance but also showed increased Co(II) ion release under in vitro conditions. For the first time, CoCr modified by nitrogen PIII was evaluated with regard to its effect on the osteogenic differentiation of MSC. The activity of alkaline phosphatase, the expression of the osteogenic genes Runt-related transcription factor 2, osteopontin as well as integrin-binding bone sialoprotein and the production of osteocalcin and hydroxyapatite were determined. The results of our study demonstrate that Co(II) ions released from the alloy affected the osteogenic differentiation of MSC. Distinct differences in differentiation markers were found between pristine and modified alloys for osteocalcin but not for integrin-binding sialoprotein and hydroxyapatite. Interestingly, osteopontin was upregulated in naive and differentiated MSC by Co(II) ions and modified CoCr, likely through the induction of a cellular hypoxic response. The findings of this study contribute to a better understanding of possible risk factors with regard to a clinical applicability of surface modified CoCr implant materials. PMID:25469667

  20. Osteogenic activity and antibacterial effect of zinc ion implanted titanium.

    PubMed

    Jin, Guodong; Cao, Huiliang; Qiao, Yuqin; Meng, Fanhao; Zhu, Hongqin; Liu, Xuanyong

    2014-05-01

    Titanium (Ti) and its alloys are widely used as orthopedic and dental implants. In this work, zinc (Zn) was implanted into oxalic acid etched titanium using plasma immersion ion implantation technology. Scanning electron microscopy and X-ray photoelectron spectroscopy were used to investigate the surface morphology and composition of Zn-implanted titanium. The results indicate that the depth profile of zinc in Zn-implanted titanium resembles a Gaussian distribution, and zinc exists in the form of ZnO at the surface whereas in the form of metallic Zn in the interior. The Zn-implanted titanium can significantly stimulate proliferation of osteoblastic MC3T3-E1 cells as well as initial adhesion, spreading activity, ALP activity, collagen secretion and extracellular matrix mineralization of the rat mesenchymal stem cells. The Zn-implanted titanium presents partly antibacterial effect on both Escherichia coli and Staphylococcus aureus. The ability of the Zn-implanted titanium to stimulate cell adhesion, proliferation and differentiation as well as the antibacterial effect on E. coli can be improved by increasing implantation time even to 2 h in this work, indicating that the content of zinc implanted in titanium can easily be controlled within the safe concentration using plasma immersion ion implantation technology. The Zn-implanted titanium with excellent osteogenic activity and partly antibacterial effect can serve as useful candidates for orthopedic and dental implants. PMID:24632388

  1. Influence of surface modification of nitinol with silicon using plasma-immersion ion implantation on the alloy corrosion resistance in artificial physiological solutions

    NASA Astrophysics Data System (ADS)

    Kashin, O. A.; Borisov, D. P.; Lotkov, A. I.; Abramova, P. V.; Korshunov, A. V.

    2015-10-01

    Cyclic voltammetry and potentiostatic polarization have been applied to study electrochemical behavior and to determine corrosion resistance of nitinol, which surface was modified with silicon using plasma-immersion ion implantation, in 0.9% NaCl solution and in artificial blood plasma. It was found out that continuous, and also homogeneous in composition, thin Si-containing layers are resistant to corrosion damage at high positive potentials in artificial physiological solutions due to formation of stable passive films. Breakdown potential Eb of Si-modified NiTi depends on the character of silicon and Ni distribution at the alloy surface, Eb values amounted to 0.9-1.5 V (Ag/AgCl/KCl sat.) for the alloy samples with continuous Si-containing surface layers and with decreased Ni surface concentration.

  2. Contamination Control in Ion Implantation

    SciTech Connect

    Eddy, R.; Doi, D.; Santos, I.; Wriggins, W.

    2011-01-07

    The investigation and elimination or control of metallic contamination in ion implanters has been a leading, continuous effort at implanter OEMs and in fabs/IDMs alike. Much of the efforts have been in the area of control of sputtering through material and geometry changes in apertures, beamline and target chamber components. In this paper, we will focus on an area that has not, heretofore, been fully investigated or controlled. This is the area of lubricants and internal and external support material such as selected cleaning media. Some of these materials are designated for internal use (beamline/vacuum) only while others are for internal and/or external use. Many applications for selected greases, for example, are designated for or are used for platens, implant disks/wheels and for wafer handling components. We will present data from popular lubricants (to be unnamed) used worldwide in ion implanters. This paper will review elements of concern in many lubricants that should be tracked and monitored by all fabs.Proper understanding of the characteristics, risks and the control of these potential contaminants can provide for rapid return to full process capability following major PMs or parts changes. Using VPD-ICPMS, Glow Discharge Mass Spectrometry and Ion Chromatography (IC) data, we will review the typical cleaning results and correlation to ''on wafer'' contamination by elements of concern--and by some elements that are otherwise barred from the fab.

  3. Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition

    SciTech Connect

    Afanasyev-Charkin, I.V.; Jacobsohn, L.G.; Averitt, R.D.; Nastasi, M.

    2004-11-01

    Amorphous hydrogenated silicon nitride (a-SiN{sub x}:H) films of different compositions (0{<=}x{<=}1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature {<=}50 deg. C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV-visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54 to 4.42 eV, and hardness changes from 11.2 to 15.3 GPa. Changes in the film properties are caused by formation of Si-N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.

  4. Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Afanasyev-Charkin, I. V.; Jacobsohn, L. G.; Averitt, R. D.; Nastasi, M.

    2004-11-01

    Amorphous hydrogenated silicon nitride (a-SiNx:H) films of different compositions (0<=x<=1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature <=50 °C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV-visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54 to 4.42 eV, and hardness changes from 11.2 to 15.3 GPa. Changes in the film properties are caused by formation of Si-N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.

  5. Surface modification by plasma immersion ion processing

    NASA Astrophysics Data System (ADS)

    Walter, Kevin C.; Lee, Deok H.; He, X. M.; Baker, N. P.; Nastasi, Michael; Munson, C. P.; Scarborough, W. K.; Tuszewski, M.; Wood, B. P.

    1998-09-01

    Los Alamos National Laboratory is actively researching a surface modification technique called plasma immersion ion processing (PIIP). PIIP is the latest innovation of the plasma source ion implantation (PSII) approach to surface modification. Like PSII, PIIP allows the modification of large areas and non-planar surface geometries, however PIIP is primarily a coating deposition technology rather than solely an ion implantation technology. PIIP utilizes a pulsed-bias on a target to extract ions out of plasma for ion implantation and coating deposition. Plasmas can be made by capacitive or inductive radio frequency sources or by initiating a glow discharge during each pulse of high voltage. Plasmas of hydrocarbon gases have been used to deposit adherent diamond-like carbon (DLC) coating son a variety of ferrous and non-ferrous materials. Instead of sputter depositing interlayers to improve the adhesion of DLC, PIIP uses ion implantation to create a graded interface between the metallic substrate and the DLC coating. Demonstrating the scaleability of PIIP, a 3 m2 area has been simultaneously coated with an adherent DLC coating approximately 7 micrometers thick. Plasmas of diborane and acetylene mixtures are being used to develop deposition processes for boron-carbide coatings. Through the use of organometallics and inorganic gases, other coatings are possible. The PIIP deposition conditions, composition and tribological properties of DLC and boron-carbide coatings will be highlighted.

  6. Influence of albumin and inorganic ions on electrochemical corrosion behavior of plasma electrolytic oxidation coated magnesium for surgical implants

    NASA Astrophysics Data System (ADS)

    Wan, Peng; Lin, Xiao; Tan, LiLi; Li, Lugee; Li, WeiRong; Yang, Ke

    2013-10-01

    Magnesium and its alloys are of great interest for biodegradable metallic devices. However, the degradation behavior and mechanisms of magnesium treated with coating in physiological environment in the presence of organic compound such as albumin have not been elucidated. In this study, the plasma electrolytic oxidation coated magnesium immersed in four different simulated body fluids: NaCl, PBS and with the addition of albumin to investigate the influence of protein and inorganic ions on degradation behavior by electrochemical methods. The results of electrochemical tests showed that aggressive corrosion took place in 0.9 wt.% NaCl solution; whereas albumin can act as an inhibitor, its adsorption impeded further dissolution of the coating. The mechanism was attributed to the synergistic effect of protein adsorption and precipitation of insoluble salts.

  7. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  8. Hydrogenation of Zr-2.5Nb alloy after plasma-immersion titanium implantation

    NASA Astrophysics Data System (ADS)

    Sutygina, A. N.; Kashkarov, E. B.; Nikitenkov, N. N.; Tyurin, Yu I.; Syrtanov, M. S.

    2016-02-01

    The study results of the influence of plasma-immersion ion implantation of titanium in Zr-2.5Nb on hydrogenation are presented. The titanium implantation was carried out in two modes: with active plasma filtering (APF) and passive plasma filtering (PPF). The results of total hydrogen concentration, absorption rate, XRD analyses and depth distribution of elements revealed that modified surface layer after titanium ion implantation is formed hydrogen diffusion barrier reduces hydrogen absorption by Zr-2.5Nb.

  9. Improved bio-tribology of biomedical alloys by ion implantation techniques

    NASA Astrophysics Data System (ADS)

    Díaz, C.; Lutz, J.; Mändl, S.; García, J. A.; Martínez, R.; Rodríguez, R. J.

    2009-05-01

    Surface modification of biomaterials by conventional ion implantation (II) and plasma immersion ion implantation (PI3) are innovative methods to improve the biocompatibility of these advanced materials. This paper describes the biocompatibility improvements of Ti6Al4V and Co28Cr6Mo implanted with N and O in a conventional implantation and a plasma immersion ion implantation processes. Tribo-corrosion friction and wear tests were performed in a realistic environment - in Hank's solution - to investigate the introduced modifications. The wear performance was only slightly improved due to a thin layer thickness, whereas, in contrast, the corrosion rate was significantly reduced.

  10. Silicon on sapphire for ion implantation studies

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.

    1974-01-01

    Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

  11. The study of composition, structure, mechanical properties and platelet adhesion of Ti-O/TiN gradient films prepared by metal plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Wen, F.; Huang, N.; Sun, H.; Wan, G. J.; Chu, P. K.; Leng, Y.

    2004-07-01

    Titanium oxide and titanium nitrogen gradient films were prepared by three different processes using metal plasma immersion ion implantation and deposition (MPIII-D). The mechanical properties of the films synthesized on silicon wafers, Ti6A14V and low temperature isotropic carbon (LTIC) were evaluated by nano-indentation, pin-on-disc wear, and scratching test. The hardness of the film was measured to be 19.5 GPa. Investigation by XRD shows that the surface Ti-O layer possesses a rutile structure and analysis by X-ray photoelectron spectra (XPS) discloses that the surface composition of the synthesized TiN/Ti-O films is non-stoichiometric. The gradient characteristics of the films were corroborated by qualitative analysis of secondary ion mass spectroscopy (SIMS). The thickness of films was 510-940 nm. Platelet adhesion experiments adopted to estimate the blood compatibility of the films show that the adsorption and deformation of platelets on the synthesized TiN/Ti-O gradient films have been significantly suppressed compared to LTIC. Scanning electron microscopy (SEM) used to assess the wear and scratch tracks discloses that the films exhibit good wear resistance and high adhesion strength.

  12. Surface modification of sapphire by ion implantation

    SciTech Connect

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  13. Ion implantation and laser annealing

    NASA Astrophysics Data System (ADS)

    Three ion implantation and laser annealing projects have been performed by ORNL through the DOE sponsored Seed Money Program. The research has contributed toward improving the characteristics of wear, hardness, and corrosion resistance of some metals and ceramics, as well as the electrical properties of semiconductors. The work has helped to spawn related research, at ORNL and elsewhere, concerning the relationships between microstructure and materials properties. ORNL research has resulted in major advances in extended life and non-corrosive artificial joints (hip and knee), high performance semiconductors, failure resistant ceramics (with potential energy applications), and solar cells. The success of the seed money projects was instrumental in the formation of ORNL's Surface Modification and Characterization Facility (SMAC). More than 60 universities and companies have participated in SMAC programs.

  14. Physical and Tribological Characteristics of Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

    1994-01-01

    Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

  15. Laser-driven ion sources for metal ion implantation for the reduction of dry friction

    SciTech Connect

    Boody, F. P.; Juha, L.; Kralikova, B.; Krasa, J.; Laska, L.; Masek, K.; Pfeifer, M.; Rohlena, K.; Skala, J.; Straka, P.; Perina, V.; Woryna, E.; Giersch, D.; Hoepfl, R.; Kelly, J. C.; Hora, H.

    1997-04-15

    The anomalously high ion currents and very high ionization levels of laser-produced plasmas give laser-driven ion sources significant advantages over conventional ion sources. In particular, laser-driven ion sources should provide higher currents of metal ions at lower cost, for implantation into solids in order to improve their material properties such as friction. The energy and charge distributions for Pb and Sn ions produced by ablation of solid targets with {approx}25 J, {approx}300 ps iodine laser pulses, resulting in up to 48-times ionized MeV ions, as well as the optimization of focus position, are presented. Implantation of these ions into Ck-45 steel, without electrostatic acceleration, produced profiles with two regions. Almost all of the ions were implanted in a near surface region a few nm deep. However, a small but significant number of ions were implanted as deep as could be measured with Rutherford backscattering (RBS), here 150 nm for Sn and 250 nm for Pb. For the implanted ion densities and profiles achieved, no change in the coefficient of friction was measured for either ion.

  16. Versatile high current metal ion implantation facility

    SciTech Connect

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1991-06-01

    A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multi-cathode, broad beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion-charge state multiplicity, and with a beam current of up to several amperes peak pulsed and several tens of mA time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. 28 refs., 5 figs.

  17. Ion Implantation with Scanning Probe Alignment

    SciTech Connect

    Persaud, A.; Liddle, J.A.; Schenkel, T.; Bokor, J.; Ivanov, Tzv.; Rangelow, I.W.

    2005-07-12

    We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezo-resistive scanning probe in high vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions.

  18. Comparison between radical- and energetic ion-induced growth of SiCxNy films in plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Afanasyev-Charkin, I. V.; Nastasi, M.

    2004-12-01

    Ternary SiCxNy compounds are materials with some remarkable properties such as high oxidation resistance and high hardness. In this work we compare the properties of SiCxNy films obtained using radio-frequency (rf) and pulsed glow discharge (PGD) plasmas with combinations of SiH4, C2H2, N2, and Ar source gases. The pulsed voltage used for the rf deposition was 200V and for the PGD deposition it was 4kV. During the rf growth, the growth takes place mostly by attaching neutral radicals to form chemical bonds. In the PGD method, the deposition takes place by subplantation and surface activation by energetic ions. We show that in the case of low-energy RF deposition, a high relative number of C -N bonds with sp3 hybridization is formed and very few Si -C bonds can be observed. Apparently the growth of carbon nitride and silicon nitride networks takes place independently. This indicates that SiH3 radicals attach to the dangling bonds of silicon and nitrogen, whereas C2H radicals attach to the dangling bonds of carbon and nitrogen. During pulsed glow discharge deposition, bonds between all three components are formed apparently by means of subplantation and damage-induced disorder. The hardness of the PGD films exceed that of the RF films, showing that to form a dense SiCxNy film one has to either supply energy during the growth of the films by heating the substrate, as in the case of chemical vapor deposition or by using energetic ions.

  19. Ion-implantation doping of silicon carbide

    SciTech Connect

    Gardner, J.; Edwards, A.; Rao, M.V.; Papanicolaou, N.; Kelner, G.; Holland, O.W.

    1997-10-01

    Because of their commercial availability in bulk single crystal form, the 6H- and 4H- polytypes of SiC are gaining importance for high-power, high-temperature, and high-frequency device applications. Selective area doping is a crucial processing step in integrated circuit manufacturing. In Si technology, selective area doping is accomplished by thermal diffusion or ion-implantation. Because of the low diffusion coefficients of most impurities in SiC, ion implantation is indispensable in SiC device manufacturing. In this paper the authors present their results on donor, acceptor, and compensation implants in 6H-SiC.

  20. Surface Protection and Improved Performance of Satellite Components as well as Mitigation of Space Environmental Pollution by Plasma Ion Implantation

    SciTech Connect

    Ueda, M.; Takahashi, W. K.; Marcondes, A. R.; Tan, I. H.; Silva, G.

    2009-01-05

    Three plasma processing systems based on PII technique have been used in the improvement of surface properties of different materials important for aerospace and space applications. Metal plasma PII of Al and Mg was used for surface protection of polymers used in space such as Kapton, Mylar and polyethylene. Al alloys were treated with nitrogen PII for improved resistance to corrosion aiming at aerospace applications. A rigid polymer UHMWPE was also treated in a nitrogen PII to produce a protective layer with DLC. Although not very light, SS304 stainless steel components are being used in a imaging camera in space, and some components made of this material showed endurance to vibration tests after nitrogen PII, therefore being qualified for on-board application.

  1. Ion implantations of oxide dispersion strengthened steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  2. Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

    SciTech Connect

    Saha, S.; Nagar, S.; Chakrabarti, S.

    2014-08-11

    ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

  3. High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Mackova, A.; Malinsky, P.; Matousek, J.; Torrisi, L.; Ullschmied, J.

    2015-07-01

    High-intensity lasers generating non-equilibrium plasma, can be employed to accelerate ions in the keV-MeV region, useful for many applications. In the present work, we performed study of ion implantation into different substrates by using a high-intensity laser at the PALS laboratory in Prague. Multi-energy ions generated by plasma from Ta and Ag targets were implanted into polyethylene and metallic substrates (Al, Ti) at energies of tens of keV per charge state. The ion emission was monitored online using time-of-flight detectors and electromagnetic deflection systems. Rutherford Backscattering Spectrometry (RBS) was used to characterise the elemental composition in the implanted substrates by ion plasma emission and to provide the implanted ion depth profiling. These last measurements enable offline plasma characterisation and provide information on the useful potentiality of multi-ion species and multi-energy ion implantation into different substrates. XPS analysis gives information on the chemical bonds and their modifications in the first superficial implanted layers. The depth distributions of implanted Ta and Ag ions were compared with the theoretical ones achieved by using the SRIM-2012 simulation code.

  4. Effects of electrical conductivity of substrate materials on microstructure of diamond-like carbon films prepared by bipolar-type plasma based ion implantation

    NASA Astrophysics Data System (ADS)

    Nakao, S.; Sonoda, T.

    2013-03-01

    Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma based ion implantation, and the structural differences between DLC films deposited on different electrical conductive substrates, i.e., conductive Si wafers and insulating glass plates are examined by Raman spectroscopy and x-ray photo emission spectroscopy (XPS). In the Raman measurements, graphite (G) and disorder (D) peaks are observed for both samples. However, the additional photo luminescence is overlapped on the spectra in the case of on-glass sample. To elucidate the structural difference, the intensity ratio of D to G peak (I(D)/I(G)), G peak position and full width at half maximum (FWHM) are obtained by curve fitting using Gaussian function and linear baseline. It is found that the I(D)/I(G) is lower, G peak position is higher and FWHM of G peak is narrower for on-glass sample than for on-Si sample. According to Robertson [1], lower I(D)/I(G) seems more sp3 C-C bonding in amount for on-glass sample. In contrast, higher G peak position and narrower FWHM of G peak suggest less sp3 C-C bonding in amount for on-glass sample. The results of XPS analysis with C1s spectra reveal that sp3 ratio, i.e., the intensity ratio of sp3/(sp3+sp2) is smaller for on-glass sample than for on-Si sample. The inconsistency of the trend between I(D)/I(G) and other parameters (G peak position and FWHM of G peak) might be caused by the overlap of photo luminescence signal on Raman spectrum as to on-glass sample. From these results, it is considered that sp3 C-C bonding is reduced in amount when using insulating substrate in comparison with conductive substrate.

  5. Annealing of ion implanted gallium nitride

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.; Pearton, S.J.; Zolper, J.C.; Stall, R.A.

    1998-03-01

    In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100{degree}C to very defective polycrystalline material. Lower-dose implants (down to 5{times}10{sup 13}cm{sup {minus}2}), which are not amorphous but defective after implantation, also anneal poorly up to 1100{degree}C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100{degree}C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. {copyright} {ital 1998 American Institute of Physics.}

  6. Ion implantation of silicon nitride ball bearings

    SciTech Connect

    Williams, J.M.; Miner, J.R.

    1996-09-01

    Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

  7. Ion implantation and diamond-like coatings of aluminum alloys

    SciTech Connect

    Malaczynski, G.W.; Hamdi, A.H.; Elmoursi, A.A.; Qiu, X.

    1997-04-01

    In an attempt to increase the wear resistance of some key automotive components, General Motors Research and Development Center initiated a study to determine the potential of surface modification as a means of improving the tribological properties of automotive parts, and to investigate the feasibility of mass producing such parts. This paper describes the plasma immersion ion implantation system that was designed for the study of various options for surface treatment, and it discusses bench testing procedures used for evaluating the surface-treated samples. In particular, both tribological and microstructural analyses are discussed for nitrogen implants and diamond-like hydrocarbon coatings of some aluminum alloys.

  8. Molecular ion sources for low energy semiconductor ion implantation (invited).

    PubMed

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. PMID:26932065

  9. Molecular ion sources for low energy semiconductor ion implantation (invited)

    NASA Astrophysics Data System (ADS)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  10. More-reliable SOS ion implantations

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1980-01-01

    Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.

  11. Fluorescence effect of ion-implanted sapphire doped with Ag/Cu/Fe elements

    NASA Astrophysics Data System (ADS)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Dai, Hou-mei; Ji, Ling-ling; Wang, Ru-wu; Wang, Deng-jing; Lu, Jian-duo; Zheng, Li-rong

    2015-11-01

    The fluorescence effect and microstructure of the nanocomposite samples prepared by ion implantation have been studied in the subsurface area. Based on the UV-vis and VUV data, the luminescence properties of implanted samples have been presented and discussed. The research indicates that the surface plasma resonance has an impact on the fluorescence effect notably. In addition, the fluorescence performance of the substrates implanted with ions is related to the outermost electron number of the injection element. And SRIM is used to analyze the energy loss in the process of ion implantation.

  12. Ion-implantation damage in silicate glasses

    NASA Astrophysics Data System (ADS)

    Arnold, G. W.

    Ion implantation is a rapid technique for simulating damage induced by alpha recoil nuclei in nuclear waste forms. The simulation has been found to be quite good in TEM comparisons with natural alpha decay damage in minerals, but leach rate differences have been observed in glass studies and were attributed to dose rate differences. The similarities between ion implantation and recoil nuclei as a means of producing damage suggest that insights into the long term behavior of glass waste forms can be obtained by examination of what is known about ion implantation damage in silicate glasses. This paper briefly reviews these effects and shows that leaching results in certain nuclear waste glasses can be understood as resulting from plastic flow and track overlap. Phase separation is also seen to be a possible consequence of damage induced compositional changes.

  13. Isotopic fractionation in low-energy ion implantation

    NASA Astrophysics Data System (ADS)

    Ponganis, K. V.; Graf, T.; Marti, K.

    1997-08-01

    The evolutions of planetary atmospheres and other solar system reservoirs have been affected by a variety of fractionating mechanisms. It has been suggested that one of these mechanisms could be low-energy ion implantation. Bernatowicz and Hagee [1987] showed that Kr and Xe implanted at low energy onto tungsten are fractionated by approximately 1% per amu, favoring the heavy isotopes; we confirm these effects. We have extended these studies to Ar and Ne, using a modified Bayard-Alpert type implanter design of cylindrical symmetry with collector potentials of -40 to -100V, and observe systematically larger mass dependent isotopic fractionation for argon and neon, >=3% per amu and >=4% per amu, respectively. These fractionations scale approximately as Δm/m for all of the noble gases measured, consistent with the findings of Bernatowicz and coworkers. Experimental data at higher energies and predictions by TRIM (Transport of Ions in Matter) code simulations indicate that sticking probabilities may depend upon the mass ratios of projectile and target. Many natural environments for low-energy ion implantation existed in the early solar nebula, such as in dusty plasmas or in the interaction of the bipolar outflow with small grains or in the wind of the early active Sun with accreting planetesimals. Low-energy ions provide viable sources for gas loading onto nebular dust grains; the result is isotopic and elemental fractionation of the projectiles.

  14. High energy implantation with high-charge-state ions in a vacuum arc ion implanter

    SciTech Connect

    Oks, E.M. |; Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion implantation energy can in principal be increased by increasing the charge states of the ions produced by the ion source rather than by increasing the implanter operating voltage, providing an important savings in cost and size of the implanter. In some recent work the authors have shown that the charge states of metal ions produced in a vacuum arc ion source can be elevated by a strong magnetic field. In general, the effect of both high arc current and high magnetic field is to push the distribution to higher charge states--the mean ion charge state is increased and new high charge states are formed. The effect is significant for implantation application--the mean ion energy can be about doubled without change in extraction voltage. Here they describe the ion source modifications, the results of time-of-flight measurements of ion charge state distributions, and discuss the use and implications of this technique as a means for doing metal iron implantation in the multi-hundreds of keV ion energy range.

  15. Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

    NASA Astrophysics Data System (ADS)

    Zhao, Qing; Zheng, Yong-zhen; Mo, Zhi-tao; Tang, De-li; Tong, Hong-hui; Geng, Man

    2001-04-01

    In order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600°C with a dose of 4×1018 ions cm-2. Using the Plasma Source Ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), x-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600°C. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

  16. Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

    SciTech Connect

    Wang, M. J.; Yuan, L.; Chen, K. J.; Xu, F. J.; Shen, B.

    2009-04-15

    The diffusion mechanisms of fluorine ions in GaN are investigated by means of time-of-flight secondary ion mass spectrometry. Instead of incorporating fluorine ions close to the sample surface by fluorine plasma treatment, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine ions in GaN is a dynamic process featuring an initial out-diffusion followed by in- diffusion and the final stabilization. A vacancy-assisted diffusion model is proposed to account for the experimental observations, which is also consistent with results on molecular dynamic simulation. Fluorine ions tend to occupy Ga vacancies induced by ion implantation and diffuse to vacancy rich regions. The number of continuous vacancy chains can be significantly reduced by a dynamic thermal annealing process. As a result, strong local confinement and stabilization of fluorine ions can be obtained in GaN crystal, suggesting excellent thermal stability of fluorine ions for device applications.

  17. Hybrid quantum circuit with implanted erbium ions

    SciTech Connect

    Probst, S.; Rotzinger, H.; Tkalčec, A.; Kukharchyk, N.; Wieck, A. D.; Wünsch, S.; Siegel, M.; Ustinov, A. V.; Bushev, P. A.

    2014-10-20

    We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er{sup 3+} ions in Y{sub 2}SiO{sub 5} coupled to an array of superconducting lumped element microwave resonators. The Y{sub 2}SiO{sub 5} crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y{sub 2}SiO{sub 5} sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

  18. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene after ion etching and ion implantation

    NASA Astrophysics Data System (ADS)

    Shtansky, D. V.; Glushankova, N. A.; Kiryukhantsev-Korneev, F. V.; Sheveiko, A. N.; Sigarev, A. A.

    2011-03-01

    The ion-plasma treatment has been widely used for modifying the surface structure of polymers in order to improve their properties, but it can lead to destruction of the surface and, as a consequence, to an increase in their toxicity. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene (PTFE) after the ion etching (IE) and ion implantation (II) for 10 min with energy densities of 363 and 226 J/cm2, respectively, has been performed. It has been shown that, unlike the ion implantation, the ion etching results in the destruction of the polymer and in the appearance of the cytotoxicity. The factors responsible for this effect, which are associated with the bulk and surface treatment, as well as with the influence of the temperature, have been discussed.

  19. Ion implantation of solar cell junctions without mass analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D.; Tonn, D. G.

    1981-01-01

    This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

  20. Metal ion implantation for large scale surface modification

    SciTech Connect

    Brown, I.G.

    1992-10-01

    Intense energetic beams of metal ions can be produced by using a metal vapor vacuum arc as the plasma discharge from which the ion beam is formed. We have developed a number of ion sources of this kind and have built a metal ion implantation facility which can produce repetitively pulsed ion beams with mean ion energy up to several hundred key, pulsed beam current of more than an ampere, and time averaged current of several tens of milliamperes delivered onto a downstream target. We've also done some preliminary work on scaling up this technology to very large size. For example, a 50-cm diameter (2000 cm[sup 2]) set of beam formation electrodes was used to produce a pulsed titanium beam with ion current over 7 amperes at a mean ion energy of 100 key. Separately, a dc embodiment has been used to produce a dc titanium ion beam with current over 600 mA, power supply limited in this work, and up to 6 amperes of dc plasma ion current was maintained for over an hour. In a related program we've developed a plasma immersion method for applying thin metallic and compound films in which the added species is atomically mixed to the substrate. By adding a gas flow to the process, well-bonded compound films can also be formed; metallic films and multilayers as well as oxides and nitrides with mixed transition zones some hundreds of angstroms thick have been synthesized. Here we outline these parallel metal-plasma-based research programs and describe the hardware that we've developed and some of the surface modification research that we've done with it.

  1. Improved corrosion resistance on biodegradable magnesium by zinc and aluminum ion implantation

    NASA Astrophysics Data System (ADS)

    Xu, Ruizhen; Yang, Xiongbo; Suen, Kai Wong; Wu, Guosong; Li, Penghui; Chu, Paul K.

    2012-12-01

    Magnesium and its alloys have promising applications as biodegradable materials, and plasma ion implantation can enhance the corrosion resistance by modifying the surface composition. In this study, suitable amounts of zinc and aluminum are plasma-implanted into pure magnesium. The surface composition, phases, and chemical states are determined, and electrochemical tests and electrochemical impedance spectroscopy (EIS) are conducted to investigate the surface corrosion behavior and elucidate the mechanism. The corrosion resistance enhancement after ion implantation is believed to stem from the more compact oxide film composed of magnesium oxide and aluminum oxide as well as the appearance of the β-Mg17Al12 phase.

  2. Method for ion implantation induced embedded particle formation via reduction

    DOEpatents

    Hampikian, Janet M; Hunt, Eden M

    2001-01-01

    A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

  3. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    SciTech Connect

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  4. Rhenium ion beam for implantation into semiconductors

    SciTech Connect

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.; Kraevsky, S. V.; Yakushin, P. E.; Khoroshilov, V. V.; Gerasimenko, N. N.; Smirnov, D. I.; Fedorov, P. A.; Temirov, A. A.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

  5. Production of Endohedral Fullerenes by Ion Implantation

    SciTech Connect

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  6. Surface mechanical properties - effects of ion implantation

    NASA Astrophysics Data System (ADS)

    Herman, Herbert

    1981-05-01

    Ion implantation has been used to modify the mechanical properties of a wide range of metals and alloys. The affected properties which have been studied include friction and wear, erosion and fatigue. Both BCC and FCC systems have been examined, with the major effort being directed at the former, due to the strong influence of interstitial implantants on mechanical properties of BCC and because of the industrial utility of these alloys. In seeking the microstructural origins of these sometimes dramatic effects, researchers have employed numerous surface analysis techniques, including backscattering and electron spectroscopy, TEM, SEM, X-ray and Mössbauer analysis and internal friction measurements. The interactions of surface dislocation structures with implantation-induced imperfections, surface alloying, and precipitation phenomena are discussed. A review is given of the current status of activities as represented by a number of research groups.

  7. Accelerating degradation rate of pure iron by zinc ion implantation.

    PubMed

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-12-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  8. Accelerating degradation rate of pure iron by zinc ion implantation

    PubMed Central

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-01-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  9. Shallow nitrogen ion implantation: Evolution of chemical state and defect structure in titanium

    NASA Astrophysics Data System (ADS)

    Manojkumar, P. A.; Chirayath, V. A.; Balamurugan, A. K.; Krishna, Nanda Gopala; Ilango, S.; Kamruddin, M.; Amarendra, G.; Tyagi, A. K.; Raj, Baldev

    2016-09-01

    Evolution of chemical states and defect structure in titanium during low energy nitrogen ion implantation by Plasma Immersion Ion Implantation (PIII) process is studied. The underlying process of chemical state evolution is investigated using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. The implantation induced defect structure evolution as a function of dose is elucidated using variable energy positron annihilation Doppler broadening spectroscopy (PAS) and the results were corroborated with chemical state. Formation of 3 layers of defect state was modeled to fit PAS results.

  10. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  11. Plasma polymerization for cell adhesive/anti-adhesive implant coating

    NASA Astrophysics Data System (ADS)

    Meichsner, Juergen; Testrich, Holger; Rebl, Henrike; Nebe, Barbara

    2015-09-01

    Plasma polymerization of ethylenediamine (C2H8N2, EDA) and perfluoropropane (C3F8, PFP) with admixture of argon and hydrogen, respectively, was studied using an asymmetric 13.56 MHz CCP. The analysis of the plasma chemical gas phase processes for stable molecules revealed consecutive reactions: C2H8N2 consumption, intermediate product NH3, and main final product HCN. In C3F8- H2 plasma the precursor molecule C3F8 and molecular hydrogen are consumed and HF as well as CF4 and C2F6 are found as main gaseous reaction products. The deposited plasma polymer films on the powered electrode are strongly cross-linked due to ion bombardment. The stable plasma polymerized films from EDA are characterized by high content of nitrogen with N/C ratio of about 0.35. The plasma polymerized fluorocarbon film exhibit a reduced F/C ratio of about 1.2. Adhesion tests with human osteoblast cell line MG-63 on coated Ti6Al4V samples (polished) compared with uncoated reference sample yielded both, the enhanced cell adhesion for plasma polymerized EDA and significantly reduced cell adhesion for fluorocarbon coating, respectively. Aging of the plasma polymerized EDA film, in particular due to the reactions with oxygen from air, showed no significant change in the cell adhesion. The fluorocarbon coating with low cell adhesion is of interest for temporary implants. Funded by the Campus PlasmaMed.

  12. Multiple Ion Implantation Effects on Wear and Wet Ability of Polyethylene Based Polymers

    NASA Astrophysics Data System (ADS)

    Torrisi, L.; Visco, A. M.; Campo, N.

    2004-10-01

    Polyethylene based polymers were ion implanted with multiple irradiations of different ions (N+, Ar+ and Kr+) at energies between 30 keV and 300 keV and doses ranging between 1013 and 1016 ions/cm2. The ion implantation dehydrogenises the polyethylene inducing cross-link effects in the residual polymer carbons. At high doses the irradiated surface show properties similar to graphite surfaces. The depth of the modified layers depends on the ion range in polyethylene at the incident ion energy. The chemical modification depends on the implanted doses and on the specie of the incident ions. A "pin-on-disc" machine was employed to measure the polymer wear against AISI-316 L stainless steel. A "contact-angle-test" machine was employed to measure the wet ability of the polymer surface for 1 μl pure water drop. Measurements demonstrate that the multiple ion implantation treatments decrease the surface wear and the surface wetting and produce a more resistant polymer surface. The properties of the treated surfaces improves the polymer functionality for many bio-medical applications, such as those relative to the polyethylene friction discs employed in knee and hip prosthesis joints. The possibility to use multiply ion implantations of polymers with traditional ion implanters and with laser ion sources producing plasmas is investigated.

  13. Electrocatalysis on ion-implanted electrodes

    SciTech Connect

    O'Grady, W E; Wolf, G K

    1981-01-01

    The oxidation of formic acid and methanol has been stuidied on electrodes prepared by ion implanting Pt in RuO/sup 2/. Formic acid was found to oxidize readily on this catalyst without poisoning the surface. In the case of methanol no reaction was found to take place. Using XPS techniques, Pt was shown to have a lower binding energy than bulk Pt. This suggests that there is excess charge on this form of Pt which changes its reactivity.

  14. High current vacuum-arc ion source for ion implantation and coating deposition technologies

    SciTech Connect

    Ryabchikov, Alexander I.; Ryabchikov, Igor A.; Stepanov, Igor B.; Dektyarev, Sergey V.

    2006-03-15

    This work is devoted to the development and investigation of a high current ion source based on dc vacuum-arc plasma generation. Extraction and acceleration of ion beams are realized in a repetitively pulsed mode with the pulse repetition rate up to 200 pps, the pulse duration up to 400 {mu}s, the accelerating voltage up to 40 kV, and the pulsed ion-beam current up to 2 A. To remove microparticles from the vacuum-arc plasma a straight-line plasma filter is used. Examples of the source use for realization of high-intensity and high-concentration ion implantation regimes including those with formation of doped layers at depths that exceed ion projective range for more than an order of magnitude are presented. At the expense of change in order and intensity of ion and plasma material treatment, the advantage of application of one source for execution of material surface pretreatment and activation regimes, formation of wide transition layers between the substrate and coating, coating deposition, and high-intensity ion mixing using ions of the same type was shown.

  15. In vivo stimulation of bone formation by aluminum and oxygen plasma surface-modified magnesium implants.

    PubMed

    Wong, Hoi Man; Zhao, Ying; Tam, Vivian; Wu, Shuilin; Chu, Paul K; Zheng, Yufeng; To, Michael Kai Tsun; Leung, Frankie K L; Luk, Keith D K; Cheung, Kenneth M C; Yeung, Kelvin W K

    2013-12-01

    A newly developed magnesium implant is used to stimulate bone formation in vivo. The magnesium implant after undergoing dual aluminum and oxygen plasma implantation is able to suppress rapid corrosion, leaching of magnesium ions, as well as hydrogen gas release from the biodegradable alloy in simulated body fluid (SBF). No released aluminum is detected from the SBF extract and enhanced corrosion resistance properties are confirmed by electrochemical tests. In vitro studies reveal enhanced growth of GFP mouse osteoblasts on the aluminum oxide coated sample, but not on the untreated sample. In addition to that a small amount (50 ppm) of magnesium ions can enhance osteogenic differentiation as reported previously, our present data show a low concentration of hydrogen can give rise to the same effect. To compare the bone volume change between the plasma-treated magnesium implant and untreated control, micro-computed tomography is performed and the plasma-treated implant is found to induce significant new bone formation adjacent to the implant from day 1 until the end of the animal study. On the contrary, bone loss is observed during the first week post-operation from the untreated magnesium sample. Owing to the protection offered by the Al2O3 layer, the plasma-treated implant degrades more slowly and the small amount of released magnesium ions stimulate new bone formation locally as revealed by histological analyses. Scanning electron microscopy discloses that the Al2O3 layer at the bone-implant interface is still present two months after implantation. In addition, no inflammation or tissue necrosis is observed from both treated and untreated implants. These promising results suggest that the plasma-treated magnesium implant can stimulate bone formation in vivo in a minimal invasive way and without causing post-operative complications. PMID:24060425

  16. Molecular Ion Beam Transportation for Low Energy Ion Implantation

    SciTech Connect

    Kulevoy, T. V.; Kropachev, G. N.; Seleznev, D. N.; Yakushin, P. E.; Kuibeda, R. P.; Kozlov, A. V.; Koshelev, V. A.; Hershcovitch, A.; Johnson, B. M.; Gushenets, V. I.; Oks, E. M.; Polozov, S. M.; Poole, H. J.

    2011-01-07

    A joint research and development of steady state intense boron ion sources for 100's of electron-volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B{sub 10}H{sub 14}) and carborane (C{sub 2}B{sub 10}H{sub 12}) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.

  17. An experiment on the dynamics of ion implantation and sputtering of surfaces

    SciTech Connect

    Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

    2014-02-15

    A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

  18. Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

    PubMed

    Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

    2012-06-01

    In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling. PMID:22755619

  19. Influence of ion source configuration and its operation parameters on the target sputtering and implantation process

    SciTech Connect

    Shalnov, K. V.; Kukhta, V. R.; Uemura, K.; Ito, Y.

    2012-06-15

    In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to {alpha}-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N{sub 2}-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

  20. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    NASA Astrophysics Data System (ADS)

    Assmann, W.; Schubert, M.; Held, A.; Pichler, A.; Chill, A.; Kiermaier, S.; Schlösser, K.; Busch, H.; Schenk, K.; Streufert, D.; Lanzl, I.

    2007-04-01

    A biodegradable, β-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the β-emitter 32P. The influence of ion implantation and gamma sterilisation on degradation and 32P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (1015 ions/cm2) and gamma dose (25 kGy) are found to be tolerable.

  1. Simulation of ion beam transport through the 400 Kv ion implanter at Michigan Ion Beam Laboratory

    SciTech Connect

    Naab, F. U.; Toader, O. F.; Was, G. S.

    2013-04-19

    The Michigan Ion Beam Laboratory houses a 400 kV ion implanter. An application that simulates the ion beam trajectories through the implanter from the ion source to the target was developed using the SIMION Registered-Sign code. The goals were to have a tool to develop an intuitive understanding of abstract physics phenomena and diagnose ion trajectories. Using this application, new implanter users of different fields in science quickly understand how the machine works and quickly learn to operate it. In this article we describe the implanter simulation application and compare the parameters of the implanter components obtained from the simulations with the measured ones. The overall agreement between the simulated and measured values of magnetic fields and electric potentials is {approx}10%.

  2. Electric propulsion using ion-ion plasmas

    NASA Astrophysics Data System (ADS)

    Aanesland, A.; Meige, A.; Chabert, P.

    2009-04-01

    Recently, we have proposed to use both positive and negative ions for thrust in an electromagnetic space propulsion system. This concept is called PEGASES for Plasma Propulsion with Electronegative GASES and has been patented by the Ecole Polytechnique in France in 2007. The basic idea is to create a stratified plasma with an electron free (ion-ion plasma) region at the periphery of a highly ionized plasma core such that both positive and negative ions can be extracted and accelerated to provide thrust. As the extracted beam is globally neutral there is no need for a downstream neutralizer. The recombination of positive and negative ions is very efficient and will result in a fast recombination downstream of the thruster and hence there is no creation of a plasma plume downstream. The first PEGASES prototype, designed in 2007, has recently been installed in a small vacuum chamber for preliminary tests in our laboratory and the first results have been presented in several conferences. This paper reviews important work that has been used in the process of designing the first PEGASES prototype.

  3. Computational stochastic model of ions implantation

    SciTech Connect

    Zmievskaya, Galina I. Bondareva, Anna L.; Levchenko, Tatiana V.; Maino, Giuseppe

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  4. Mutagenesis of Arabidopsis Thaliana by N+ Ion Implantation

    NASA Astrophysics Data System (ADS)

    Zhang, Genfa; Shi, Xiaoming; Nie, Yanli; Jiang, Shan; Zhou, Hongyu; Lu, Ting; Zhang, Jun

    2006-05-01

    Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N+ ion implantation and γ-rays radiation. Our data support the following conclusions: (1) N+ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; (2) Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N+ ion implantation is nonlinear; (3) Like γ-rays radiation, both somatic and germ-line mutations could be induced by N+ ion implantation; and (4) RAPD deletion patterns are usually seen in N+ ion implantation induced mutation.

  5. Ion-Implanted Diamond Films and Their Tribological Properties

    NASA Technical Reports Server (NTRS)

    Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

    1993-01-01

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

  6. Properties of ion implanted Ti-6Al-4V processed using beamline and PSII techniques

    SciTech Connect

    Walter, K.C.; Woodring, J.S.; Nastasi, M.; Munson, C.M.; Williams, J.M.; Poker, D.B.

    1996-12-31

    The surface of Ti-6Al-4V (Ti64) alloy has been modified using beamline implantation of boron. In separate experiments, Ti64 has been implanted with nitrogen using a plasma source ion implantation (PSII) technique utilizing either ammonia (NH{sub 3}), nitrogen (N{sub 2}), or their combinations as the source of nitrogen ions. Beamline experiments have shown the hardness of the N-implanted surface saturates at a dose level of {approximately} 4 {times} 10{sup 17} at/cm{sup 2} at {approximately} 10 GPa. The present work makes comparisons of hardness and tribological tests of (1) B implantation using beamline techniques, and (2) N implanted samples using ammonia and/or nitrogen gas in a PSII process. The results show that PSII using N{sub 2} or NH{sub 3} gives similar hardness as N implantation using a beamline process. The presence of H in the Ti alloy surface does not affect the hardness of the implanted surface. Boron implantation increased the surface hardness by as much as 2.5x at the highest dose level. Wear testing by a pin-on-disk method indicated that nitrogen implantation reduced the wear rate by as much as 120x, and boron implantation reduced the wear rate by 6.5x. Increased wear resistance was accompanied by a decreased coefficient of friction.

  7. Ion implantation effects in 'cosmic' dust grains

    NASA Technical Reports Server (NTRS)

    Bibring, J. P.; Langevin, Y.; Maurette, M.; Meunier, R.; Jouffrey, B.; Jouret, C.

    1974-01-01

    Cosmic dust grains, whatever their origin may be, have probably suffered a complex sequence of events including exposure to high doses of low-energy nuclear particles and cycles of turbulent motions. High-voltage electron microscope observations of micron-sized grains either naturally exposed to space environmental parameters on the lunar surface or artificially subjected to space simulated conditions strongly suggest that such events could drastically modify the mineralogical composition of the grains and considerably ease their aggregation during collisions at low speeds. Furthermore, combined mass spectrometer and ionic analyzer studies show that small carbon compounds can be both synthesized during the implantation of a mixture of low-energy D, C, N ions in various solids and released in space by ion sputtering.

  8. Applications of ion implantation for high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Minnucci, J. A.; Kirkpatrick, A. R.

    1977-01-01

    Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

  9. Energetic ions in ITER plasmas

    SciTech Connect

    Pinches, S. D.; Chapman, I. T.; Sharapov, S. E.; Lauber, Ph. W.; Oliver, H. J. C.; Shinohara, K.; Tani, K.

    2015-02-15

    This paper discusses the behaviour and consequences of the expected populations of energetic ions in ITER plasmas. It begins with a careful analytic and numerical consideration of the stability of Alfvén Eigenmodes in the ITER 15 MA baseline scenario. The stability threshold is determined by balancing the energetic ion drive against the dominant damping mechanisms and it is found that only in the outer half of the plasma (r/a>0.5) can the fast ions overcome the thermal ion Landau damping. This is in spite of the reduced numbers of alpha-particles and beam ions in this region but means that any Alfvén Eigenmode-induced redistribution is not expected to influence the fusion burn process. The influence of energetic ions upon the main global MHD phenomena expected in ITER's primary operating scenarios, including sawteeth, neoclassical tearing modes and Resistive Wall Modes, is also reviewed. Fast ion losses due to the non-axisymmetric fields arising from the finite number of toroidal field coils, the inclusion of ferromagnetic inserts, the presence of test blanket modules containing ferromagnetic material, and the fields created by the Edge Localised Mode (ELM) control coils in ITER are discussed. The greatest losses and associated heat loads onto the plasma facing components arise due to the use of the ELM control coils and come from neutral beam ions that are ionised in the plasma edge.

  10. Flame annealing of ion implanted silicon

    SciTech Connect

    Narayan, J.; Young, R.T.

    1983-01-01

    The authors investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200/sup 0/C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a defect-free annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening, i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formation of 90/sup 0/ dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20-1.25 and low reverse bias currents.

  11. PLEPS study of ions implanted RAFM steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  12. All-ion-implantation process for integrated circuits

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1979-01-01

    Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

  13. Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

    SciTech Connect

    Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

    2005-05-01

    Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested.

  14. Mechanical stresses and amorphization of ion-implanted diamond

    NASA Astrophysics Data System (ADS)

    Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

    2013-06-01

    Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

  15. Plasma ion composition measurements for Europa

    NASA Astrophysics Data System (ADS)

    Sittler, E. C.; Cooper, J. F.; Hartle, R. E.; Paterson, W. R.; Christian, E. R.; Lipatov, A. S.; Mahaffy, P. R.; Paschalidis, N. P.; Coplan, M. A.; Cassidy, T. A.; Richardson, J. D.; Fegley, B.; Andre, N.

    2013-11-01

    Jupiter magnetospheric interactions and surface composition, both important to subsurface ocean detection for the Galilean icy moons Europa, Ganymede, and Callisto, can be measured using plasma ion mass spectrometry on either an orbiting spacecraft or one designed for multiple flybys of these moons. Detection of emergent oceanic materials at the Europa surface is more likely than at Ganymede and Callisto. A key challenge is to resolve potential intrinsic Europan materials from the space weathering patina of iogenic species implanted onto the sensible surface by magnetospheric interactions. Species-resolved measurements of pickup ion currents are also critical to extraction of oceanic induced magnetic fields from magnetospheric interaction background dominated by these currents. In general the chemical astrobiological potential of Europa should be determined through the combination of surface, ionospheric, and pickup ion composition measurements. The requisite Ion Mass Spectrometer (IMS) for these measurements would need to work in the high radiation environment of Jupiter's magnetosphere between the orbits of Europa and Ganymede, and beyond. A 3D hybrid model of the moon-magnetosphere interaction is also needed to construct a global model of the electric and magnetic fields, and the plasma environment, around Europa. Europa's ionosphere is probably usually dominated by hot pickup ions with 100-1000 eV temperatures, excursions to a "classical" cold ionosphere likely being infrequent. A field aligned ionospheric wind driven by the electron polarization electric field should arise and be measurable.

  16. Modeling of nanocluster formation by ion beam implantation

    SciTech Connect

    Li, Kun-Dar

    2011-08-15

    A theoretical model was developed to investigate the mechanism of the formation of nanoclusters via ion beam implantation. The evolution of nanoclusters, including the nucleation and growth process known as Ostwald ripening, was rebuilt using numerical simulations. The effects of implantation parameters such as the ion energy, ion fluence, and temperature on the morphology of implanted microstructures were also studied through integration with the Monte Carlo Transport of Ions in Matter code calculation for the distribution profiles of implanted ions. With an appropriate ion fluence, a labyrinth-like nanostructure with broad size distributions of nanoclusters formed along the ion implantation range. In a latter stage, a buried layer of implanted impurity developed. With decreasing ion energy, the model predicted the formation of precipitates on the surface. These simulation results were fully consistent with many experimental observations. With increased temperature, the characteristic length and size of nanostructures would increase due to the high mobility. This theoretical model provides an efficient numerical approach for fully understanding the mechanism of the formation of nanoclusters, allowing for the design of ion beam experiments to form specific nanostructures through ion-implantation technology.

  17. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, R.H.; Zhang, S.

    1997-01-14

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

  18. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, Rolf H.; Zhang, Shengtao

    1997-01-01

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

  19. Ion implantation induced blistering of rutile single crystals

    NASA Astrophysics Data System (ADS)

    Xiang, Bing-Xi; Jiao, Yang; Guan, Jing; Wang, Lei

    2015-07-01

    The rutile single crystals were implanted by 200 keV He+ ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He+ ion implantation with appropriate fluence and the following thermal annealing.

  20. Ion-Assisted Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, C. Daniel; Abraham-Shrauner, Barbara

    1996-11-01

    We analyze plasma etching of two-dimensional, long trenches where directed ions modeled by drifted Maxwellian distribution functions and isotropic neutral molecules contribute to the etch rate. Analytic expressions for the etch rates enable the user to plot the etch profiles by using standard computer packages for nonlinear first-order ordinary differential equations for the point and its slope. First, etch profiles are shown for ion-assisted etching where the thermal etching of the neutrals is enhanced by the ions. Second, we show etch profiles of a multiple layer device where one layer is n-type silicon (arsenic doped) that etches isotropically (G.S. Oehrlein, "Reactive Ion Etching," Handbook of Plasma Processing, Technology, Ed. S.M. Rossnagel, et al., Noyes Pub., NJ, 1990) The etch rates for the other layers are in the ion flux-limited regime. The lateral etching of the n-type silicon illustrates the necessity of sidewall passivation for this structure.

  1. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    NASA Astrophysics Data System (ADS)

    Stolk, P. A.; Ponomarev, Y. V.; Schmitz, J.; van Brandenburg, A. C. M. C.; Roes, R.; Montree, A. H.; Woerlee, P. H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation.

  2. Modification of sol-gel coatings by ion implantation

    NASA Astrophysics Data System (ADS)

    Hirashima, Hiroshi; Adachi, Kenji; Imai, Hiroaki

    1994-10-01

    In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

  3. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source.

    PubMed

    Shin, Chang Seouk; Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Lee, Seung Wook; Won, Mi-Sook

    2016-02-01

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm(2). The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research. PMID:26931931

  4. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source

    NASA Astrophysics Data System (ADS)

    Shin, Chang Seouk; Lee, Byoung-Seob; Choi, Seyong; Yoon, Jang-Hee; Kim, Hyun Gyu; Ok, Jung-Woo; Park, Jin Yong; Kim, Seong Jun; Bahng, Jungbae; Hong, Jonggi; Lee, Seung Wook; Won, Mi-Sook

    2016-02-01

    The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm2. The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

  5. Implantation of nitrogen, carbon, and phosphorus ions into metals

    SciTech Connect

    Guseva, M.I.; Gordeeva, G.V.

    1987-01-01

    The application of ion implantation for alloying offers a unique opportunity to modify the chemical composition, phase constitution, and microstructure of the surface layers of metals. The authors studied ion implantation of nitrogen and carbon into the surface layers of metallic targets. The phase composition of the implanted layers obtained on the Kh18N10T stainless steel, the refractory molybdenum alloy TsM-6, niobium, and nickel was determined according to the conventional method of recording the x-ray diffraction pattern of the specimens using monochromatic FeK/sub alpha/-radiation on a DRON-2,0 diffractometer. The targets were bombarded at room temperature in an ILU-3 ion accelerator. The implantation of metalloid ions was also conducted with the targets being bombarded with 100-keV phosphorus ions and 40-keV carbon ions.

  6. Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications

    NASA Astrophysics Data System (ADS)

    Wilbur, P. J.

    1993-09-01

    The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred micro-A/sq cm on a target 50 cm downstream of the ion source were demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B, and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

  7. Sources and transport systems for low energy extreme of ion implantation

    SciTech Connect

    Hershcovitch, A.; Batalin, V.A.; Bugaev, A.S.; Gushenets, V.I.; Alexeyenko, O.; Gurkova, E.; Johnson, B.M.; Kolomiets, A.A.; Kropachev, G.N.; Kuibeda, R.P.; Kulevoy, T.V.; Masunov, E.S.; Oks, E.M.; Pershin, V.I.; Polozov, S.M.; Poole, H.J.; Seleznev, D.N.; Storozhenko, P.A.; Vizir, A.; Svarovski, A.Ya.; Yakushin, P.; Yushkov, G.Yu.

    2010-06-06

    For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy ion implantation. For boron cluster source development, we started with molecular ions of decaborane (B{sub 10}H{sub 14}), octadecaborane (B{sub 18}H{sub 22}), and presently our focus is on carborane (C{sub 2}B{sub 10}H{sub 12}) ions developing methods for mitigating graphite deposition. Simultaneously, we are developing a pure boron ion source (without a working gas) that can form the basis for a novel, more efficient, plasma immersion source. Our Calutron-Berna ion source was converted into a universal source capable of switching between generating molecular phosphorous P{sub 4}{sup +}, high charge state ions, as well as other types of ions. Additionally, we have developed transport systems capable of transporting a very large variety of ion species, and simulations of a novel gasless/plasmaless ion beam deceleration method were also performed.

  8. Ion Implantation into Presolar Grains: A Theoretical Model

    NASA Astrophysics Data System (ADS)

    Verchovsky, A. B.; Wright, I. P.; Pillinger, C. T.

    A numerical model for ion implantation into spherical grains in free space has been developed. It can be applied to single grains or collections of grains with known grain-size distributions. Ion-scattering effects were taken into account using results of computer simulations. Possible isotope and element fractionation of the implanted species was investigated using this model. The astrophysical significance of the model lies in the possible identification of energetically different components (such as noble gases) implanted into presolar grains (such as diamond and SiC) and in establishing implantation energies of the components.

  9. Subcutoff microwave driven plasma ion sources for multielemental focused ion beam systems.

    PubMed

    Mathew, Jose V; Chowdhury, Abhishek; Bhattacharjee, Sudeep

    2008-06-01

    A compact microwave driven plasma ion source for focused ion beam applications has been developed. Several gas species have been experimented including argon, krypton, and hydrogen. The plasma, confined by a minimum B multicusp magnetic field, has good radial and axial uniformity. The octupole multicusp configuration shows a superior performance in terms of plasma density (~1.3 x 10(11) cm(-3)) and electron temperature (7-15 eV) at a power density of 5-10 Wcm(2). Ion current densities ranging from a few hundreds to over 1000 mA/cm(2) have been obtained with different plasma electrode apertures. The ion source will be combined with electrostatic Einzel lenses and should be capable of producing multielemental focused ion beams for nanostructuring and implantations. The initial simulation results for the focused beams have been presented. PMID:18601405

  10. Microstructure evolution in carbon-ion implanted sapphire

    SciTech Connect

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-15

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10{sup 17} or 2x10{sup 17} cm{sup -2} and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L{sub 1}) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L{sub 2}) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L{sub 3}) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  11. Ion implantation processing of GaN epitaxial layers

    SciTech Connect

    Tan, H.H.; Williams, J.S.; Zou, J.; Cockayne, D.J.H.; Pearton, S.J.; Yuan, C.

    1996-12-31

    Ion implantation induced-damage build up in epitaxial GaN layers grown on sapphire has been analyzed by ion channeling and electron microscopy techniques. The epitaxial layers are extremely resistant to ion beam damage in that substantial dynamic annealing of implantation disorder occurs even at liquid nitrogen temperatures. Amorphous layers can be formed in some cases if the implantation dose is high enough. However, the damage (amorphous or complex extended defects) that is formed is also extremely difficult to remove during annealing and required temperatures in excess of 1,100 C.

  12. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  13. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Peercy, P.S.; Land, C.E.

    1980-06-13

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

  14. Modification of medical metals by ion implantation of copper

    NASA Astrophysics Data System (ADS)

    Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

    2007-10-01

    The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

  15. Irregularities in electronegative plasmas due to ion-ion coupling

    SciTech Connect

    Vitello, P.

    1999-07-01

    In partially ionized electronegative plasmas at low neutral pressure and high plasma density, coupling between positive and negative ions through space charge effects and through Coulomb scattering can lead to turbulence and irregularities in the ion density and flux. In this regime, the force on ions due to ion-ion coulomb scattering may dominate that from ion scattering with neutrals. This can lead to the formation of a, possibly turbulent, negative ion boundary layer containing the bulk of the negative ions. Commercial inductively Coupled Plasmas reactors used in the semiconductor industry typically operate at low pressure and high plasma density. Simulations are presented for a Chlorine discharge in the GEC reactor modified for Inductively Coupled operation. Results show that ion-ion coupling can induce large variations in the plasma density, and that accurate modeling of spatial plasma structure should include these effects.

  16. Bacterial adhesion on ion-implanted stainless steel surfaces

    NASA Astrophysics Data System (ADS)

    Zhao, Q.; Liu, Y.; Wang, C.; Wang, S.; Peng, N.; Jeynes, C.

    2007-08-01

    Stainless steel disks were implanted with N +, O + and SiF 3+, respectively at the Surrey Ion Beam Centre. The surface properties of the implanted surfaces were analyzed, including surface chemical composition, surface topography, surface roughness and surface free energy. Bacterial adhesion of Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus, which frequently cause medical device-associated infections was evaluated under static condition and laminar flow condition. The effect of contact time, growth media and surface properties of the ion-implanted steels on bacterial adhesion was investigated. The experimental results showed that SiF 3+-implanted stainless steel performed much better than N +-implanted steel, O +-implanted steel and untreated stainless steel control on reducing bacterial attachment under identical experimental conditions.

  17. Ion implantation induced nanotopography on titanium and bone cell adhesion

    NASA Astrophysics Data System (ADS)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; de Maeztu, Miguel Ángel

    2014-08-01

    Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40-80 keV), fluence (1-2 e17 ion/cm2) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted surfaces, without surface chemistry modification, are in the same range and that such modifications, in certain conditions, do have a statistically significant effect on bone tissue forming cell adhesion.

  18. Development of vertical compact ion implanter for gemstones applications

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  19. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  20. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  1. Software for goniometer control in the Triple Ion Implantation Facility

    SciTech Connect

    Allen, W.R.

    1994-02-01

    A computer program is described tat controls the goniometer employed in the ion scattering chamber of the Triple Ion Implantation Facility (TIF) in the Metals and Ceramics Division at Oak Ridge National Laboratory. Details of goniometer operation and its incorporation into the ion scattering setup specific to the TIF are also discussed.

  2. High energy metal ion implantation using `Magis`, a novel, broad-beam, Marx-generator-based ion source

    SciTech Connect

    Anders, A.; Brown, I.G.; Dickinson, M.R.; MacGill, R.A.

    1996-08-01

    Ion energy of the beam formed by an ion source is proportional to extractor voltage and ion charge state. Increasing the voltage is difficult and costly for extraction voltage over 100 kV. Here we explore the possibility of increasing the charge states of metal ions to facilitate high-energy, broad beam ion implantation at a moderate voltage level. Strategies to enhance the ion charge state include operating in the regimes of high-current vacuum sparks and short pulses. Using a time-of-flight technique we have measured charge states as high as 7+ (73 kA vacuum spark discharge) and 4+ (14 kA short pulse arc discharge), both for copper, with the mean ion charge states about 6.0 and 2.5, respectively. Pulsed discharges can conveniently be driven by a modified Marx generator, allowing operation of ``Magis`` with a single power supply (at ground potential) for both plasma production and ion extraction.

  3. Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

    SciTech Connect

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Henderson, D.O.

    1996-06-01

    Nanocrystals of SiGe alloy have been formed inside a SiO{sub 2} matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.

  4. Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon On Insulator Transistors

    NASA Astrophysics Data System (ADS)

    Gonzatti, Frederic; Milési, Frederic; Delaye, Vincent; Duchaine, Julian; Torregrosa, Frank; Etienne, Hasnaa; Yckache, Karim

    2011-01-01

    To face the continuous dimensions downscaling for upcoming semiconductor devices, we have investigated a plasma immersion ion implantation way and have compared the results to a conventional one. This new implantation method allows, in particular, high and thin doping concentration to field source and drain requirements for 32 nm node and below. In addition to this key step, a silicon selective epitaxy growth has been performed. Thus, n-type and p-type ion implantations have been carried out on thin blanket SOI substrates in Pulsion® plasma ion implantation tool manufactured by Ion Beam Services, with AsH3, BF3 or B2H6 precursors. Then a recrystallization annealing followed by silicon selective epitaxial growth has been performed in a reduced pressure chemical vapor deposition tool. Regarding n-type implantation we observed a poly-silicon growth in areas where the top silicon has been amorphous down to the buried oxide and a mono-silicon growth for areas where the top silicon has not been completely amorphous. Indeed, in this case recrystallization annealing was not sufficient to allow lengthwise solid phase epitaxy growth whereas there were no difficulties for axial one. Regarding p-type implantations no epitaxial growths have been observed at all. This lack of growth cannot be explained by a complete silicon amorphization which would have led to a growth of poly-silicon like for n-type implantation. According to our first results this growth vacancy could be explained by the very high boron atoms concentration on the substrate surface. The latter being resistant to HF-last cleaning could thus block silicon nucleation. However some rinsing processes, more or less aggressive, have been tested to remove this boron silicon alloy layer. Among these different tests, hydrochloric or plasma etching have provided, in some specific cases, promising results allowing an epitaxial silicon growth.

  5. Bone tissue response to plasma-nitrided titanium implant surfaces.

    PubMed

    Ferraz, Emanuela Prado; Sverzut, Alexander Tadeu; Freitas, Gileade Pereira; Sá, Juliana Carvalho; Alves, Clodomiro; Beloti, Marcio Mateus; Rosa, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  6. Bone tissue response to plasma-nitrided titanium implant surfaces

    PubMed Central

    FERRAZ, Emanuela Prado; SVERZUT, Alexander Tadeu; FREITAS, Gileade Pereira; SÁ, Juliana Carvalho; ALVES, Clodomiro; BELOTI, Marcio Mateus; ROSA, Adalberto Luiz

    2015-01-01

    A current goal of dental implant research is the development of titanium (Ti) surfaces to improve osseointegration. Plasma nitriding treatments generate surfaces that favor osteoblast differentiation, a key event to the process of osteogenesis. Based on this, it is possible to hypothesize that plasma-nitrided Ti implants may positively impact osseointegration. Objective The aim of this study was to evaluate the in vivo bone response to Ti surfaces modified by plasma-nitriding treatments. Material and Methods Surface treatments consisted of 20% N2 and 80% H2, 450°C and 1.5 mbar during 1 h for planar and 3 h for hollow cathode. Untreated surface was used as control. Ten implants of each surface were placed into rabbit tibiae and 6 weeks post-implantation they were harvested for histological and histomorphometric analyses. Results Bone formation was observed in contact with all implants without statistically significant differences among the evaluated surfaces in terms of bone-to-implant contact, bone area between threads, and bone area within the mirror area. Conclusion Our results indicate that plasma nitriding treatments generate Ti implants that induce similar bone response to the untreated ones. Thus, as these treatments improve the physico-chemical properties of Ti without affecting its biocompatibility, they could be combined with modifications that favor bone formation in order to develop new implant surfaces. PMID:25760262

  7. Dopant activation in ion implanted silicon by microwave annealing

    SciTech Connect

    Alford, T. L.; Thompson, D. C.; Mayer, J. W.; Theodore, N. David

    2009-12-01

    Microwaves are used as a processing alternative for the electrical activation of ion implanted dopants and the repair of ion implant damage within silicon. Rutherford backscattering spectra demonstrate that microwave heating reduces the damage resulting from ion implantation of boron or arsenic into silicon. Cross-section transmission electron microscopy and selective area electron diffraction patterns demonstrate that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Sheet resistance readings indicate the time required for boron or arsenic electrical activation within implanted silicon. Hall measurements demonstrate the extent of dopant activation after microwave heating of implanted silicon. Physical and electrical characterization determined that the mechanism of recrystallization in arsenic implanted silicon is solid phase epitaxial regrowth. The boron implanted silicon samples did not result in enough lattice damage to amorphize the silicon lattice and resulted in low boron activation during microwave annealing even though recrystallization of the Si lattice damage did take place. Despite low boron activation levels, the level of boron activation in this work was higher than that expected from traditional annealing techniques. The kinetics of microwave heating and its effects on implanted Si are also discussed.

  8. A decaborane ion source for high current implantation

    NASA Astrophysics Data System (ADS)

    Perel, Alex S.; Loizides, William K.; Reynolds, William E.

    2002-02-01

    Progressive semiconductor device scaling in each technology node requires the formation of shallower junctions, and thus lower energy implants. The difficulties associated with extraction and transport of low energy beams often result in a loss in wafer throughput. Implantation of boron using the molecular compound decaborane has been found to allow for the shallow implantation of boron without a significant design change in the implanter. The decaborane molecule has 10 boron atoms and 14 hydrogen atoms. The implanted dose is ten times the electrical dose and the implanted depth is equivalent to the depth of a boron beam at 1/11th of the extraction energy. This advantage can only be exploited with an ion source that does not destroy the fragile molecule. We report on the design of an ion source capable of ionizing decaborane without significant fragmentation of the molecule. After it was shown that the decaborane molecule fragments above 350 °C an ion source was designed to prevent thermal dissociation of the molecule. Competitive boron dose rates were achieved using this source in a commercial high current implanter. In addition, evidence is shown that a decaborane dimer is formed in the ion source and can be implanted.

  9. Inductively Coupled Plasma Mass Spectrometry Study on the Increase in the Amount of Pr Atoms for Cs-Ion-Implanted Pd/CaO Multilayer Complex with Deuterium Permeation

    NASA Astrophysics Data System (ADS)

    Hioki, Tatsumi; Takahashi, Naoko; Kosaka, Satoru; Nishi, Teppei; Azuma, Hirozumi; Hibi, Shogo; Higuchi, Yuki; Murase, Atsushi; Motohiro, Tomoyoshi

    2013-10-01

    To investigate the nuclear transmutation of Cs into Pr reported in this journal by Iwamura and coworkers, we have measured the amount of Pr atoms in the range as low as ˜1×1010 cm-2 using inductively coupled plasma mass spectrometry for Cs-ion-implanted Pd/CaO multilayer complexes before and after deuterium permeation. The amount of Pr was initially at most 2.0×1011 cm-2 and it increased up to 1.6×1012 cm-2 after deuterium permeation. The increase in the amount of Pr could be explained neither by deuterium permeation-stimulated segregation of Pr impurities nor by external contamination from the experimental environment during the permeation. No increase in Pr was observed for permeation with hydrogen. These findings suggest that the observed increase in Pr with deuterium permeation can be attributed to a nuclear origin, as reported by Iwamura and coworkers, although the amount of the increase in Pr is two orders of magnitude less than that reported by them.

  10. Caborane beam from ITEP Bernas ion source for semiconductor implanters

    SciTech Connect

    Seleznev, D.; Hershcovitch, A.; Kropachev, G.; Kozlov, A.; Kuibeda, R.; Koshelev, V.; Kulevoy, T.; Jonson, B.; Poole, J.; Alexeyenko, O.; Gurkova, E.; Oks, E.; Gushenets, V.; Polozov, S.; Masunov, E.

    2010-02-01

    A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C{sub 2}B{sub 10}H{sub 12}) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

  11. Industrial applications of ion implantation into metal surfaces

    SciTech Connect

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry.

  12. Improving Sustainability of Ion Implant Modules

    NASA Astrophysics Data System (ADS)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  13. SEM analysis of ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Malherbe, Johan B.; van der Berg, N. G.; Botha, A. J.; Friedland, E.; Hlatshwayo, T. T.; Kuhudzai, R. J.; Wendler, E.; Wesch, W.; Chakraborty, P.; da Silveira, E. F.

    2013-11-01

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag+, I+ and Xe+ ions were separately implanted into 6H-SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H-SiC wafers implanted with 360 keV Ag+ ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I+ ions implanted at 600 °C into 6H-SiC and annealed at 1600 °C. The 6H-SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H-SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room temperature heavy ion bombardment. Subsequent

  14. Ion Beam Analysis applied to laser-generated plasmas

    NASA Astrophysics Data System (ADS)

    Cutroneo, M.; Macková, A.; Havranek, V.; Malinsky, P.; Torrisi, L.; Kormunda, M.; Barchuk, M.; Ullschmied, J.; Dudzak, R.

    2016-04-01

    This paper presents the research activity on Ion Beam Analysis methods performed at Tandetron Laboratory (LT) of the Institute of Nuclear Physics AS CR, Rez, Czech Republic. Recently, many groups are paying attention to implantation by laser generated plasma. This process allows to insert a controllable amount of energetic ions into the surface layers of different materials modifying the physical and chemical properties of the surface material. Different substrates are implanted by accelerated ions from plasma through terawatt iodine laser, at nominal intensity of 1015 W/cm2, at the PALS Research Infrastructure AS CR, in the Czech Republic. This regime of the laser matter interaction generates, multi-MeV proton beams, and multi-charged ions that are tightly confined in time (hundreds ps) and space (source radius of a few microns). These ion beams have a much lower transverse temperature, a much shorter duration and a much higher current than those obtainable from conventional accelerators. The implementation of protons and ions acceleration driven by ultra-short high intensity lasers is exhibited by adopting suitable irradiation conditions as well as tailored targets. An overview of implanted targets and their morphological and structural characterizations is presented and discussed.

  15. Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

    NASA Astrophysics Data System (ADS)

    Wu, Yuguang; Zhang, Tonghe; Zhang, Yanwen; Zhang, Huixing; Zhang, Xiaoji; Zhou, Gu

    2001-01-01

    Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1×10 16 to 2×10 17 cm -2. The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1×10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased.

  16. The Development and Evolution of Ion Implanters in the Semiconductor Industry

    NASA Astrophysics Data System (ADS)

    Armour, Dave G.

    2008-11-01

    combined with detailed considerations of the roles of emittance, space charge and beam plasma characteristics if beams compatible with production worthy ultra-shallow junction formation are to be obtained. For these shallow, high dose implants, the proximity of the surface has a significant effect on the radiation damage build-up and annealing processes. To develop an understanding of the physics of some aspects of these processes, high depth resolution analytical techniques such as medium energy ion scattering have been applied. In the present review, the process based evolution of ion implantation equipment is discussed alongside a consideration of the contribution made by the growth in understanding of the physics of both the beams themselves and the ion collection and radiation damage processes occurring in the implanted silicon.

  17. Plasma ion sources and ion beam technology inmicrofabrications

    SciTech Connect

    Ji, Lili

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 μm-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance (25

  18. Optical imaging and information storage in ion implanted ferroelectric ceramics

    SciTech Connect

    Peercy, P.S.; Land, C.E.

    1981-11-01

    Photographic images can be stored in ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics using a novel photoferroelectric effect. These images are nonvolatile but erasable and can be switched from positive to negative by application of an electric field. We have found that the photosensitivity of ferroelectric PLZT is dramatically improved by ion implantation into the surface exposed to image light. For example, the intrinsic photosensitivity to near-UV light is increased by as much as four orders of magnitude by coimplantation with Ar and Ne. The increased photosensitivity results from implantation-induced decreases in dark conductivity and dielectric constant in the implanted layer. Furthermore, the increased photoferroelectric sensitivity has recently been extended from the near-UV to the visible spectrum by implants of Al and Cr. Ion-implanted PLZT is the most sensitive, nonvolatile, selectively-erasable image storage medium currently known.

  19. Amorphization and defect recombination in ion implanted silicon carbide

    SciTech Connect

    Grimaldi, M.G.; Calcagno, L.; Musumeci, P.; Frangis, N.; Van Landuyt, J.

    1997-06-01

    The damage produced in silicon carbide single crystals by ion implantation was investigated by Rutherford backscattering channeling and transmission electron microscopy techniques. Implantations were performed at liquid nitrogen and at room temperatures with several ions to examine the effect of the ion mass and of the substrate temperature on the damaging process. The damage accumulation is approximately linear with fluence until amorphization occurs when the elastic energy density deposited by the ions overcomes a critical value. The critical energy density for amorphization depends on the substrate temperature and is greatest at 300 K indicating that defects recombination occurs already at room temperature. Formation of extended defects never occurred and point defects and uncollapsed clusters of point defects were found before amorphization even in the case of light ion implantation. The atomic displacement energy has been estimated to be {approximately}12 eV/atom from the analysis of the damage process in dilute collision cascades. {copyright} {ital 1997 American Institute of Physics.}

  20. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    SciTech Connect

    Land, C.E.; Peercy, P.S.

    1983-07-05

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H/sup +/, He/sup +/, Ne/sup +/, Ar/sup +/, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1 X 10/sup 12/ to 1 X 10/sup 17/, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  1. Photosensitivity enhancement of PLZT ceramics by positive-ion implantation

    SciTech Connect

    Peercy, P.S.; Land, C.E.

    1982-01-28

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and nonvolatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H/sup +/, He/sup +/, Ne/sup +/, Ar/sup +/, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-uv light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1 x 10/sup 12/ to 1 x 10/sup 17/, and with sufficient energy, from 100 to 500 keV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  2. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Land, Cecil E.; Peercy, Paul S.

    1983-01-01

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  3. Improvement of Contact Resistance with Molecular Ion Implantation

    SciTech Connect

    Lee, Kyung Won; Lee, Jin Ku; Oh, Jae Geun; Ju, Min Ae; Jeon, Seung Joon; Ku, Ja Chun; Park, Sung Ki; Huh, Tae Hoon; Kim, Steve; Ra, Geum Joo; Harris, Mark A.; Reece, Ronald N.; Yoon, Dae Ho

    2008-11-03

    Basic characteristics of ClusterBoron (B{sub 18}H{sub 22}) implantation were investigated for improving contact resistance in DRAM devices. Generally, {sup 49}BF{sub 2} has been widely used for contact implant application in DRAM manufacturing because of its higher productivity compared to monomer boron ({sup 11}B). However, because of limited activation in a low thermal budget ({approx}800 deg. C) anneal, the sheet resistance was saturated for doses over 5x10{sup 15} ions/cm{sup 2}. Although many investigations have been reported, such as {sup 30}BF implant mixed implant with monomer boron etc., no practical solution has been found for dramatic improvement of contact resistance in a productive manner. B{sub 18}H{sub 22} was developed to overcome the productivity limitations encountered in low energy, high dose boron implantation and the limited activation of {sup 49}BF{sub 2} due to co-implanted fluorine. In this study, basic characterization of the B{sub 18}H{sub 22} contact implant was performed through sheet resistance, SIMS (Secondary Ion Mass Spectrometry) and XTEM (cross-sectional transmission electron microscopy). The B{sub 18}H{sub 22} implants showed lower sheet resistance than conventional {sup 49}BF{sub 2} for 5x10{sup 15} ions/cm{sup 2} on bare wafer tests. Through XTEM study, we found the activation behavior of both B{sub 18}H{sub 22} and {sup 49}BF{sub 2} were directly related with the amorphous layer thickness and residual defects from low thermal budget anneal. PMOS contact resistance in the sub-70 nm device by B{sub 18}H{sub 22} implantation showed considerable improvement (about 30%), showing B{sub 18}H{sub 22} could replace the BF{sub 2} for contact implant in contact resistance implant.

  4. Surface Engineering of Nanostructured Titanium Implants with Bioactive Ions.

    PubMed

    Kim, H-S; Kim, Y-J; Jang, J-H; Park, J-W

    2016-05-01

    Surface nanofeatures and bioactive ion chemical modification are centrally important in current titanium (Ti) oral implants for enhancing osseointegration. However, it is unclear whether the addition of bioactive ions definitively enhances the osteogenic capacity of a nanostructured Ti implant. We systematically investigated the osteogenesis process of human multipotent adipose stem cells triggered by bioactive ions in the nanostructured Ti implant surface. Here, we report that bioactive ion surface modification (calcium [Ca] or strontium [Sr]) and resultant ion release significantly increase osteogenic activity of the nanofeatured Ti surface. We for the first time demonstrate that ion modification actively induces focal adhesion development and expression of critical adhesion–related genes (vinculin, talin, and RHOA) of human multipotent adipose stem cells, resulting in enhanced osteogenic differentiation on the nanofeatured Ti surface. It is also suggested that fibronectin adsorption may have only a weak effect on early cellular events of mesenchymal stem cells (MSCs) at least in the case of the nanostructured Ti implant surface incorporating Sr. Moreover, results indicate that Sr overrides the effect of Ca and other important surface factors (i.e., surface area and wettability) in the osteogenesis function of various MSCs (derived from human adipose, bone marrow, and murine bone marrow). In addition, surface engineering of nanostructured Ti implants using Sr ions is expected to exert additional beneficial effects on implant bone healing through the proper balancing of the allocation of MSCs between adipogenesis and osteogenesis. This work provides insight into the future surface design of Ti dental implants using surface bioactive ion chemistry and nanotopography. PMID:26961491

  5. The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

    SciTech Connect

    Myers, S.M.; Headley, T.J.; Hills, C.R.; Han, J.; Petersen, G.A.; Seager, C.H.; Wampler, W.R.

    1999-01-07

    Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980 C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations 1 at.%, faceted H{sub 2} bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations 0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

  6. Nanocrystal formation via yttrium ion implantation into sapphire

    SciTech Connect

    Hunt, E.M.; Hampikian, J.M.; Poker, D.B.

    1995-12-31

    Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 A {+-} .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.

  7. Bioactivity of Mg-ion-implanted zirconia and titanium

    NASA Astrophysics Data System (ADS)

    Liang, H.; Wan, Y. Z.; He, F.; Huang, Y.; Xu, J. D.; Li, J. M.; Wang, Y. L.; Zhao, Z. G.

    2007-01-01

    Titanium and zirconia are bioinert materials lacking bioactivity. In this work, surface modification of the two typical biomaterials is conducted by Mg-ion-implantation using a MEVVA ion source in an attempt to increase their bioactivity. Mg ions were implanted into zirconia and titanium with fluences ranging from 1 × 10 17 to 3 × 10 17 ions/cm 2 at 40 keV. The Mg-implanted samples, as well as control (unimplanted) samples, were immersed in SBF for 7 days and then removed to identify the presence of calcium and phosphate (Ca-P) coatings and to characterize their morphology and structure by SEM, XRD, and FT-IR. SEM observations confirm that globular aggregates are formed on the surfaces of the Mg-implanted zirconia and titanium while no precipitates are observed on the control samples. XRD and FT-IR analyses reveal that the deposits are carbonated hydroxyapatite (HAp). Our experimental results demonstrate that Mg-implantation improves the bioactivity of zirconia and titanium. Further, it is found that the degree of bioactivity is adjustable by the ion dose. Mechanisms are proposed to interpret the improvement of bioactivity as a result of Mg implantation and the difference in bioactivity between zirconia and titanium.

  8. Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

    NASA Technical Reports Server (NTRS)

    Melcher, C. L.; Tombrello, T. A.; Burnett, D. S.

    1982-01-01

    The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

  9. BCA-kMC Hybrid Simulation for Hydrogen and Helium Implantation in Material under Plasma Irradiation

    NASA Astrophysics Data System (ADS)

    Kato, Shuichi; Ito, Atsushi; Sasao, Mamiko; Nakamura, Hiroaki; Wada, Motoi

    2015-09-01

    Ion implantation by plasma irradiation into materials achieves the very high concentration of impurity. The high concentration of impurity causes the deformation and the destruction of the material. This is the peculiar phenomena in the plasma-material interaction (PMI). The injection process of plasma particles are generally simulated by using the binary collision approximation (BCA) and the molecular dynamics (MD), while the diffusion of implanted atoms have been traditionally solved by the diffusion equation, in which the implanted atoms is replaced by the continuous concentration field. However, the diffusion equation has insufficient accuracy in the case of low concentration, and in the case of local high concentration such as the hydrogen blistering and the helium bubble. The above problem is overcome by kinetic Monte Carlo (kMC) which represents the diffusion of the implanted atoms as jumps on interstitial sites in a material. In this paper, we propose the new approach ``BCA-kMC hybrid simulation'' for the hydrogen and helium implantation under the plasma irradiation.

  10. Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy

    SciTech Connect

    Duengen, W.; Job, R.; Mueller, T.; Ma, Y.; Fahrner, W. R.; Keller, L. O.; Horstmann, J. T.; Fiedler, H.

    2006-12-15

    Czochralski silicon wafers were implanted with H{sup +} ions at a dose of 1x10{sup 16} cm{sup -2} followed by hydrogen plasma treatments at different temperatures. The minimum hydrogen implantation dose required for silicon surface exfoliation of 3x10{sup 16} H{sup +}/cm{sup 2} without further hydrogen incorporation was reduced to one-third by subsequent plasma hydrogenation. The corresponding local vibrational modes of hydrogen molecules, vacancy-hydrogen complexes, and Si-H bonds on surfaces have been analyzed by micro-Raman scattering spectroscopy to investigate blistering and platelet formation. The surface profile has been studied by atomic force microscopy and scanning electron microscopy. The plasma treated samples were annealed to investigate the mechanism and applicability of the induced exfoliation. <111>-platelet formation occurred below plasma hydrogenation temperatures of 350 deg. C. At temperatures above 450 deg. C, <100>-platelet nucleation induced blistering.

  11. Charging and discharging in ion implanted dielectric films used for capacitive radio frequency microelectromechanical systems switch

    SciTech Connect

    Li Gang; Chen Xuyuan; San Haisheng

    2009-06-15

    In this work, metal-insulator-semiconductor (MIS) capacitor structure was used to investigate the dielectric charging and discharging in the capacitive radio frequency microelectromechanical switches. The insulator in MIS structure is silicon nitride films (SiN), which were deposited by either low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD) processes. Phosphorus or boron ions were implanted into dielectric layer in order to introduce impurity energy levels into the band gap of SiN. The relaxation processes of the injected charges in SiN were changed due to the ion implantation, which led to the change in relaxation time of the trapped charges. In our experiments, the space charges were introduced by stressing the sample electrically with dc biasing. The effects of implantation process on charge accumulation and dissipation in the dielectric are studied by capacitance-voltage (C-V) measurement qualitatively and quantitatively. The experimental results show that the charging and discharging behavior of the ion implanted silicon nitride films deposited by LPCVD is quite different from the one deposited by PECVD. The charge accumulation in the dielectric film can be reduced by ion implantation with proper dielectric deposition method.

  12. Influence of Oxygen Ion Implantation on the Damage and Annealing Kinetics of Iron-Implanted Sapphire

    SciTech Connect

    Hunn, J.D.; McHargue, C.J.

    1999-11-14

    The effects of implanted oxygen on the damage accumulation in sapphire which was previously implanted with iron was studied for (0001) sapphire implanted with iron and then with oxygen. The energies were chosen to give similar projected ranges. One series was implanted with a 1:l ratio (4x10{sup 16} ions/cm{sup 2} each) and another with a ratio of 2:3 (4x10{sup 16} fe{sup +}/cm{sup 2}; 6x10{sup 16} O{sup +}/cm{sup 2}). Retained damage, X, in the Al-sublattice, was compared to that produced by implantation of iron alone. The observed disorder was less for the dual implantations suggesting that implantation of oxygen enhanced dynamic recovery during implantation. Samples were annealed for one hour at 800 and 1200 C in an oxidizing and in a reducing atmosphere. No difference was found in the kinetics of recovery in the Al-sublattice between the two dual implant conditions. However, the rate of recovery was different for each from samples implanted with iron alone.

  13. Less-Costly Ion Implantation of Solar Cells

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D. J.

    1984-01-01

    Experiments point way toward more relaxed controls over ion-implanation dosage and uniformity in solar-cell fabrication. Data indicate cell performance, measured by output current density at fixed voltage, virtually same whether implant is particular ion species or broad-beam mixture of several species.

  14. Method For Silicon Surface Texturing Using Ion Implantation

    SciTech Connect

    Kadakia, Nirag; Naczas, Sebastian; Bakhru, Hassaram; Huang Mengbing

    2011-06-01

    As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods - ion implantation - is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

  15. Biofunctionalization of surfaces by energetic ion implantation: Review of progress on applications in implantable biomedical devices and antibody microarrays

    NASA Astrophysics Data System (ADS)

    Bilek, Marcela M. M.

    2014-08-01

    Despite major research efforts in the field of biomaterials, rejection, severe immune responses, scar tissue and poor integration continue to seriously limit the performance of today's implantable biomedical devices. Implantable biomaterials that interact with their host via an interfacial layer of active biomolecules to direct a desired cellular response to the implant would represent a major and much sought after improvement. Another, perhaps equally revolutionary, development that is on the biomedical horizon is the introduction of cost-effective microarrays for fast, highly multiplexed screening for biomarkers on cell membranes and in a variety of analyte solutions. Both of these advances will rely on effective methods of functionalizing surfaces with bioactive molecules. After a brief introduction to other methods currently available, this review will describe recently developed approaches that use energetic ions extracted from plasma to facilitate simple, one-step covalent surface immobilization of bioactive molecules. A kinetic theory model of the immobilization process by reactions with long-lived, mobile, surface-embedded radicals will be presented. The roles of surface chemistry and microstructure of the ion treated layer will be discussed. Early progress on applications of this technology to create diagnostic microarrays and to engineer bioactive surfaces for implantable biomedical devices will be reviewed.

  16. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  17. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    NASA Astrophysics Data System (ADS)

    Baumann, H.; Bethge, K.; Bilger, G.; Jones, D.; Symietz, I.

    2002-11-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (α,α) backscattering and the resonant nuclear reaction 1H( 15N,αγ) 12C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of marrow bone cells on the implanted sample surface with that of titanium.

  18. Nitrogen and boron ion implantation into electrodeposited hard chrome

    SciTech Connect

    Walter, K.C.; Tesmer, J.R.; Scarborough, W.K.; Woodring, J.S.; Nastasi, M.; Kern, K.T.

    1996-10-01

    Electrodeposited hard chrome was ion implanted with N alone, B alone, and a combination. Separate N and B implantation was done at 75 keV and incident doses of 2, 4, and 8x10{sup 17} at/cm{sup 2}. Samples with both N/B implants used 75 keV and incident dose levels of 4x10{sup 17} N- and B-at/cm{sup 2}. Beam-line system was used. Retained dose was measured using ion beam analysis, which indicated most of the incident dose was retained. Surface hardness, wear coefficient, and friction coefficient were determined by nanohardness indentation and pin-on-disk wear. At a depth of 50 nm, surface hardness increased from 18{+-}1 GPa (unimplanted) to a max of 23{+-}4 GPa for B implant and 26{+-}1 GPa for N implant. the wear coefficient was reduced by 1.3x to 7.4x, depending on implantation. N implant results in lower wear coefficients than B implant.

  19. [Improve wear resistance of UHMWPE by O+ ion implanted].

    PubMed

    Xiong, Dangsheng

    2003-12-01

    Ultra high molecular weight polyethylene (UHMWPE) was implanted with 450 keV and 100 keV O+ ions at dosage of 1 x 10(15)/cm2, 5 x 10(15)/cm2, 3 x 10(14)/cm2, respectively. Its wear behaviors were studied under dry friction condition and lubrication by means of distilled water using a pin-on-disk tribometer with a Si3N4 ceramic ball as a counterface. The wear surfaces were examined with SEM. The experimental results showed that the wear rate of implanted UHMWPE is lower than that of un-implanted UHMWPE under both dry and distilled friction conditions, especially for 450 keV energy and 5 x 10(15)/cm2 dose implantation. The friction coefficient of O+ ions implanted UHMWPE is higher than that of un-implanted UHMWPE under both dry and distilled friction conditions. The adhesive, plow and plastic deformation are the wearing mechanism for un-implanted UHMWPE; the fatigue and abrasive wear are that for implanted UHMWPE. PMID:14716850

  20. Study of ion-irradiated tungsten in deuterium plasma

    NASA Astrophysics Data System (ADS)

    Khripunov, B. I.; Gureev, V. M.; Koidan, V. S.; Kornienko, S. N.; Latushkin, S. T.; Petrov, V. B.; Ryazanov, A. I.; Semenov, E. V.; Stolyarova, V. G.; Danelyan, L. S.; Kulikauskas, V. S.; Zatekin, V. V.; Unezhev, V. N.

    2013-07-01

    Experimental study aimed at investigation of neutron induced damage influence on fusion reactor plasma facing materials is reported. Displacement damage was produced in tungsten by high-energy helium and carbon ions at 3-10 MeV. The reached level of displacement damage ranged from several dpa to 600 dpa. The properties of the irradiated tungsten were studied in steady-state deuterium plasma on the LENTA linear divertor simulator. Plasma exposures were made at 250 eV of ion energy to fluence 1021-1022 ion/сm2. Erosion dynamics of the damaged layer and deuterium retention were observed. Surface microstructure modifications and important damage of the 5 μm layer shown. Deuterium retention in helium-damaged tungsten (ERD) showed its complex behavior (increase or decrease) depending on implanted helium quantity and the structure of the surface layer.

  1. A Nanoscale-Localized Ion Damage Josephson Junction Using Focused Ion Beam and Ion Implanter.

    PubMed

    Wu, C H; Ku, W S; Jhan, F J; Chen, J H; Jeng, J T

    2015-05-01

    High-T(c) Josephson junctions were fabricated by nanolithography using focused ion beam (FIB) milling and ion implantation. The junctions were formed in a YBa2Cu3O7-x, thin film in regions defined using a gold-film mask with 50-nm-wide (top) slits, engraved by FIB. The focused ion beam system parameters for dwell time and passes were set to remove gold up to a precise depth. 150 keV oxygen ions were implanted at a nominal dose of up to 5 x 10(13) ions/cm2 into YBa2Cu3O7-x microbridges through the nanoscale slits. The current-voltage curves of the ion implantation junctions exhibit resistive-shunted-junction-like behavior at 77 K. The junction had an approximately linear temperature dependence of critical current. Shapiro steps were observed under microwave irradiation. A 50-nm-wide slit and 0-20-nm-thick buffer layers were chosen in order to make Josephson junctions due to the V-shape of the FIB-milled trench. PMID:26504998

  2. Luminescence of a titanate compound under europium ion implantation

    NASA Astrophysics Data System (ADS)

    Plantevin, O.; Oliviero, E.; Dantelle, G.; Mayer, L.

    2014-05-01

    The ability to incorporate europium ions in a near-surface layer of a nonlinear optical material KTiOPO4 by ion implantation is reported here. Europium diffusion as well as surface modification were characterized after annealing using RBS. The photoluminescence of the as-implanted samples indicates that the creation of defects gives rise to green visible emission centered about 550 nm. Annealing up to 1000 °C does not allow the oxidation to the 3+ valence state of the europium ion. However it is shown that annealing up to such high temperature gives rise to an intense near infra-red photoluminescence in the range 800-1100 nm in implanted samples at an optimal fluence of 2 × 1013 europium ions/cm2.

  3. Magnesium ion implantation on a micro/nanostructured titanium surface promotes its bioactivity and osteogenic differentiation function

    PubMed Central

    Wang, Guifang; Li, Jinhua; Zhang, Wenjie; Xu, Lianyi; Pan, Hongya; Wen, Jin; Wu, Qianju; She, Wenjun; Jiao, Ting; Liu, Xuanyong; Jiang, Xinquan

    2014-01-01

    As one of the important ions associated with bone osseointegration, magnesium was incorporated into a micro/nanostructured titanium surface using a magnesium plasma immersion ion-implantation method. Hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 30 minutes (Mg30) and hierarchical hybrid micro/nanostructured titanium surfaces followed by magnesium ion implantation for 60 minutes (Mg60) were used as test groups. The surface morphology, chemical properties, and amount of magnesium ions released were evaluated by field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, field-emission transmission electron microscopy, and inductively coupled plasma-optical emission spectrometry. Rat bone marrow mesenchymal stem cells (rBMMSCs) were used to evaluate cell responses, including proliferation, spreading, and osteogenic differentiation on the surface of the material or in their medium extraction. Greater increases in the spreading and proliferation ability of rBMMSCs were observed on the surfaces of magnesium-implanted micro/nanostructures compared with the control plates. Furthermore, the osteocalcin (OCN), osteopontin (OPN), and alkaline phosphatase (ALP) genes were upregulated on both surfaces and in their medium extractions. The enhanced cell responses were correlated with increasing concentrations of magnesium ions, indicating that the osteoblastic differentiation of rBMMSCs was stimulated through the magnesium ion function. The magnesium ion-implanted micro/nanostructured titanium surfaces could enhance the proliferation, spreading, and osteogenic differentiation activity of rBMMSCs, suggesting they have potential application in improving bone-titanium integration. PMID:24940056

  4. Study of the plasma immersion implantation of titanium in stainless steel

    NASA Astrophysics Data System (ADS)

    Nikitenkov, N. N.; Sutygina, A. N.; Shulepov, I. A.; Sivin, D. O.; Kashkarov, E. B.

    2015-04-01

    The results of the study of the pulsed plasma-immersion ion implantation of titanium in steel Cr18Ni10Ti depending on the time (dose) implantation are presented. It is shown that the change of the element and the phase composition of the surface layers and their microscopic characteristics and mechanical properties (hardness, wear resistance) depending on the implantation time is not monotonic, but follows to a certain rule. The possibility of interpretation of the obtained results in the thermal spike concept of the generation on the surface by the stable (magic) clusters is discussed. This concept follows logically from the recent studies on the plasma arc composition and from a polyatomic clusters-surface interaction.

  5. Material synthesis for silicon integrated-circuit applications using ion implantation

    NASA Astrophysics Data System (ADS)

    Lu, Xiang

    As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

  6. Ion-beam Plasma Neutralization Interaction Images

    SciTech Connect

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  7. Osteoconductivity of hydrophilic microstructured titanium implants with phosphate ion chemistry.

    PubMed

    Park, Jin-Woo; Jang, Je-Hee; Lee, Chong Soo; Hanawa, Takao

    2009-07-01

    This study investigated the surface characteristics and bone response of titanium implants produced by hydrothermal treatment using H(3)PO(4), and compared them with those of implants produced by commercial surface treatment methods - machining, acid etching, grit blasting, grit blasting/acid etching or spark anodization. The surface characteristics were evaluated by scanning electron microscopy, thin-film X-ray diffractometry, X-ray photoelectron spectroscopy, contact angle measurement and stylus profilometry. The osteoconductivity of experimental implants was evaluated by removal torque testing and histomorphometric analysis after 6 weeks of implantation in rabbit tibiae. Hydrothermal treatment with H(3)PO(4) and subsequent heat treatment produced a crystalline phosphate ion-incorporated oxide (titanium oxide phosphate hydrate, Ti(2)O(PO(4))(2)(H(2)O)(2); TiP) surface approximately 5microm in thickness, which had needle-like surface microstructures and superior wettability compared with the control surfaces. Significant increases in removal torque forces and bone-to-implant contact values were observed for TiP implants compared with those of the control implants (p<0.001). After thorough cleaning of the implants removed during the removal torque testing, a considerable quantity of attached bone was observed on the surfaces of the TiP implants. PMID:19332400

  8. Ion/water channels for embryo implantation barrier.

    PubMed

    Liu, Xin-Mei; Zhang, Dan; Wang, Ting-Ting; Sheng, Jian-Zhong; Huang, He-Feng

    2014-05-01

    Successful implantation involves three distinct processes, namely the embryo apposition, attachment, and penetration through the luminal epithelium of the endometrium to establish a vascular link to the mother. After penetration, stromal cells underlying the epithelium differentiate and surround the embryo to form the embryo implantation barrier, which blocks the passage of harmful substances to the embryo. Many ion/water channel proteins were found to be involved in the process of embryo implantation. First, ion/water channel proteins play their classical role in establishing a resting membrane potential, shaping action potentials and other electrical signals by gating the flow of ions across the cell membrane. Second, most of ion/water channel proteins are regulated by steroid hormone (estrogen or progesterone), which may have important implications to the embryo implantation. Last but not least, these proteins do not limit themselves as pure channels but also function as an initiator of a series of consequences once activated by their ligand/stimulator. Herein, we discuss these new insights in recent years about the contribution of ion/water channels to the embryo implantation barrier construction during early pregnancy. PMID:24789983

  9. The effect of plasma surface treatment on the bioactivity of titanium implant materials (in vitro)

    PubMed Central

    Abdelrahim, Ramy A.; Badr, Nadia A.; Baroudi, Kusai

    2016-01-01

    Background: The surface of an implantable biomaterial plays a very important role in determining the biocompatibility, osteoinduction, and osteointegration of implants because it is in intimate contact with the host bone and soft tissues. Objective: This study was aimed to assess the effect of plasma surface treatment on the bioactivity of titanium alloy (Ti–6Al–4V). Materials and Methods: Fifteen titanium alloy samples were used in this study. The samples were divided into three groups (with five samples in each group). Five samples were kept untreated and served as control (group A). Another five plasma samples were sprayed for nitrogen ion implantation on their surfaces (group B) and the last five samples were pre-etched with acid before plasma treatment (group C). All the investigated samples were immersed for 7 days in Hank's balanced salt solution (HBSS) which was used as a simulating body fluid (SBF) at pH 7.4 and 37°C. HBSS was renewed every 3 days. The different surfaces were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDXA), and Fourier Transformation Infrared Spectroscopy (FTIR). Results: Nitriding of Ti-alloy samples via plasma nitrogen ion implantation increased the bioactivity of titanium. Moreover, the surface topography affected the chemical structure of the formed apatite. Increasing the surface roughness enhanced the bioactivity of the implant material. Conclusions: Nitridation can be exploited as an effective way to promote the formation of bone-like material on the implant surface. PMID:27011927

  10. Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics

    SciTech Connect

    Land, C.E.

    1985-01-01

    We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

  11. Al-O interactions in ion-implanted crystalline silicon

    NASA Astrophysics Data System (ADS)

    Galvagno, G.; La Ferla, A.; Spinella, C.; Priolo, F.; Raineri, V.; Torrisi, Lucio; Rimini, E.; Carnera, A.; Gasparotto, A.

    1994-08-01

    The formation and dissolution of Si-O-Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.

  12. Evolution of defects in silicon carbide implanted with helium ions

    NASA Astrophysics Data System (ADS)

    Zhang, Chonghong; Song, Yin; Yang, Yitao; Zhou, Chunlan; Wei, Long; Ma, Hongji

    2014-05-01

    Effects of accumulation of radiation damage in silicon carbide are important concerns for the use of silicon carbide in advanced nuclear energy systems. In the present work lattice damage in silicon carbide crystal (4H type) implanted with 100 keV 4He+ ions was investigated with Rutherford backscattering spectrometry in channeling geometry (RBS/c) and positron beam Doppler broadening spectrometry (PBDB). Helium implantation was performed at the specimen temperature of 510 K to avoid amorphization of the SiC crystal. Fluences of helium ions were selected to be in the range from 1 × 1016 to 3 × 1016 ions cm-2, around the dose threshold for the formation of observable helium bubbles under transmission electron microscopes (TEM). The RBS/c measurements show distinctly different annealing behavior of displaced Si atoms at doses below or above the threshold for helium bubble formation. The RBS/c yield in the peak damage region of the specimen implanted to 3 × 1016 He-ions cm-2 shows an increase on the subsequently thermal annealing above 873 K, which is readily ascribed to the extra displacement of Si atoms due to helium bubble growth. The RBS/c yield in the specimen implanted to a lower ion fluence of 1.5 × 1016 He-ions cm-2 decreases monotonously on annealing from ambient temperatures up to 1273 K. The PBDB measurements supply evidence of clustering of vacancies at temperatures from 510 to 1173 K, and dissociation of vacancy clusters above 1273 K. The similarity of annealing behavior in PBDB profiles for helium implantation to 1 × 1016 and 3 × 1016 ions cm-2 is ascribed to the saturation of trapping of positrons in vacancy type defects in the damaged layers in the specimens helium-implanted to the two dose levels.

  13. Ion implantation of diamond: Damage, doping, and lift-off

    SciTech Connect

    Parikh, N.R.; McGucken, E.; Swanson, M.L.; Hunn, J.D.; White, C.W.; Zuhr, R.A.

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  14. On carbon nitride synthesis at high-dose ion implantation

    NASA Astrophysics Data System (ADS)

    Romanovsky, E. A.; Bespalova, O. V.; Borisov, A. M.; Goryaga, N. G.; Kulikauskas, V. S.; Sukharev, V. G.; Zatekin, V. V.

    1998-04-01

    Rutherford backscattering spectrometry was used for the study of high dose 35 keV nitrogen ions implantation into graphites and glassy carbon. Quantitative data on depth profiles and its dependencies on irradiation fluence and ion beam density were obtained. The stationary dome-shaped depth profile with maximum nitrogen concentration 22-27 at.% and half-width more than twice exceeding projected range of ions is reached at fluence Φ ˜10 18 cm -2. The dependence of the maximum concentration in the profile on ion current density was studied. The largest concentration was obtained at reduced ion current density.

  15. Optical image storage in ion implanted PLZT ceramics

    SciTech Connect

    Peercy, P. S.; Land, C. E.

    1980-01-01

    Optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-uv light with photon energies greater than the band gas energy of approx. 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform uv illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of greater than or equal to 100:1 and spatial resolution of approx. 10 ..mu..m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. 100 mJ/cm/sup 2/) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. It was found in H, He, and Ar implanted PLZT that the photosensitivity can be significantly increased by ion implantation into the surface to be exposed. The photosensitivity after implantation with 5 x 10/sup 14/ 500 keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The image storage process and the effect of ion implantation is presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and ion implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with light intensity for ion implanted PLZT.

  16. Influence of ion implantation on titanium surfaces for medical applications

    NASA Astrophysics Data System (ADS)

    Krischok, Stefan; Blank, Claudia; Engel, Michael; Gutt, Richard; Ecke, Gernot; Schawohl, Jens; Spieß, Lothar; Schrempel, Frank; Hildebrand, Gerhard; Liefeith, Klaus

    2007-09-01

    The implantation of ions into the near surface layer is a new approach to improve the osseointegration of metallic biomaterials like titanium. Meanwhile it is well known that surface topography and surface physico-chemistry as well as visco-elastic properties influence the cell response after implantation of implants into the human body. To optimize the cell response of titanium, ion implantation techniques have been used to integrate calcium and phosphorus, both elements present in the inorganic bone phase. In this context, the concentration profile of the detected elements and their chemical state have been investigated using X-ray photoelectron spectroscopy and Auger electron spectroscopy depth profiling. Ion implantation leads to strong changes of the chemical composition of the near surface region, which are expected to modify the biofunctionality as observed in previous experiments on the cell response. The co-implantation of calcium and phosphorus samples, which showed best results in the performed tests (biological and physical), leads to a strong modification of the chemical surface composition.

  17. Method For Silicon Surface Texturing Using Ion Implantation

    NASA Astrophysics Data System (ADS)

    Kadakia, Nirag; Naczas, Sebastian; Bakhru, Hassaram; Huang, Mengbing

    2011-06-01

    As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods—ion implantation—is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

  18. Observations of Ag diffusion in ion implanted SiC

    SciTech Connect

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  19. Ion implantation for manufacturing bent and periodically bent crystals

    SciTech Connect

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo Mazzolari, Andrea; Paternò, Gianfranco; Lanzoni, Luca

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  20. Cathodoluminescence characterization of ion implanted GaAs

    NASA Astrophysics Data System (ADS)

    Cone, M. L.

    1980-03-01

    The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials.

  1. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    SciTech Connect

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  2. Some properties of ion and cluster plasma

    SciTech Connect

    Gudzenko, L.I.; Derzhiev, V.I.; Yakovlenko, S.I.

    1982-11-01

    The aggregate of problems connected with the physics of ion and cluster plasma is qualitatively considered. Such a plasma can exist when a dense gas is ionized by a hard ionizer. The conditions for the formation of an ion plasma and the difference between its characteristics and those of an ordinary electron plasma are discussed; a solvated-ion model and the distribution of the clusters with respect to the number of solvated molecules are considered. The recombination rate of the positively and negatively charged clusters is roughly estimated. The parameters of a ball-lightning plasma are estimated on the basis of the cluster model.

  3. Experimental investigations of helium ion implantation in the first wall of JET

    NASA Astrophysics Data System (ADS)

    Zhu, J.; McCracken, G. M.; Coad, J. P.

    1991-07-01

    3.5 MeV alpha particles will be produced in fusion reactors. Although they will be slowed down in the plasma, they will still retain some energy upon diffusing out to the wall and therefore will be expected to become implanted there. We have developed a technique for measuring the depth distribution of helium implanted in metals. The technique has been applied to the analysis of Ni and inconel samples exposed in the JET tokamak for ˜ 5000 discharges during 1987-1988 with ion cyclotron resonance heating (ICRH). Significant quantities of 3He and 4He atoms have been detected due to the use of helium both as a plasma fuel and as a minority species for ICRH. The energy distribution of the ions heated by ICRH in the plasma is expected to be similar to that characterizing the alpha particles in a reactor. The analysis shows a broad range distribution in the samples up to at least 1.0 μm in depth. Calibration of the technique has been performed using implants of monoenergetic 3He and 4He at energies of 2-50 keV and fluences of (1-5) × 10 16 ions cm -2. The results are in quite good agreement with predictions from the TRIM code. The sensitivity of the system is such that concentrations of 5 ×10 18 atoms cm˜3 ( ˜ 50 ppm) are detectable.

  4. Vertical silicon waveguide coupler bent by ion implantation.

    PubMed

    Yoshida, Tomoya; Tajima, Syougo; Takei, Ryohei; Mori, Masahiko; Miura, Noboru; Sakakibara, Youichi

    2015-11-16

    We propose and demonstrate that vertically curved waveguides (VCWs) enable vertical coupling between silicon wire waveguides and optical fibers with low wavelength dependence and polarization dependence for wide telecommunication wavelength band light. To bend these VCWs, we implanted silicon ions into silicon wire cantilevers from the vertical direction. The internal stress distribution that was induced by ion implantation drove the bending force, and we achieved vertical bending of the waveguides, with curvature radii ranging from 3 to 25 μm. At a radius of curvature of 6 μm, we obtained a coupling loss of 3 dB using a lens fiber. PMID:26698428

  5. Raman spectroscopy of ion-implanted silicon

    SciTech Connect

    Tuschel, D.D.; Lavine, J.P.

    1997-11-01

    Raman spectroscopy is used to characterize silicon implanted with boron at a dose of 10{sup 14}/cm{sup 2} or less and thermally annealed. The Raman scattering strengths and band shapes of the first-order optical mode at 520 cm{sup {minus}1} and of the second-order phonon modes are investigated to determine which modes are sensitive to the boron implant. The as-implanted samples show diminishing Raman scattering strength as the boron dose increases when the incident laser beam is 60{degree} with respect to the sample normal. Thermal annealing restores some of the Raman scattering strength. Three excitation wavelengths are used and the shortest, 457.9 nm, yields the greatest spectral differences from unimplanted silicon. The backscattering geometry shows a variety of changes in the Raman spectrum upon boron implantation. These involve band shifts of the first-order optical mode, bandwidth variations of the first-order optical mode, and the intensity of the second-order mode at 620 cm{sup {minus}1}.

  6. The Optical Properties of Ion Implanted Silica

    NASA Technical Reports Server (NTRS)

    Smith, Cydale C.; Ila, D.; Sarkisov, S.; Williams, E. K.; Poker, D. B.; Hensley, D. K.

    1997-01-01

    We will present our investigation on the change in the optical properties of silica, 'suprasil', after keV through MeV implantation of copper, tin, silver and gold and after annealing. Suprasil-1, name brand of silica glass produced by Hereaus Amerisil, which is chemically pure with well known optical properties. Both linear nonlinear optical properties of the implanted silica were investigated before and after thermal annealing. All implants, except for Sn, showed strong optical absorption bands in agreement with Mie's theory. We have also used Z-scan to measure the strength of the third order nonlinear optical properties of the produced thin films, which is composed of the host material and the metallic nanoclusters. For implants with a measurable optical absorption band we used Doyle's theory and the full width half maximum of the absorption band to calculate the predicted size of the formed nanoclusters at various heat treatment temperatures. These results are compared with those obtained from direct observation using transmission electron microscopic techniques.

  7. Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

    SciTech Connect

    Liu Chenglong; Xin Yunchang; Tian Xiubo; Zhao, J.; Chu, Paul K.

    2007-03-15

    Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has three layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO{sub 2} with some Mg(OH){sub 2}. The middle layer that is 50 nm thick comprises predominantly TiO{sub 2} and MgO with minor contributions from MgAl{sub 2}O{sub 4} and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti{sub 3}Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37{+-}1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased {beta}-Mg{sub 12}Al{sub 17} phase.

  8. Temperature Activated Diffusion of Radicals through Ion Implanted Polymers.

    PubMed

    Wakelin, Edgar A; Davies, Michael J; Bilek, Marcela M M; McKenzie, David R

    2015-12-01

    Plasma immersion ion implantation (PIII) is a promising technique for immobilizing biomolecules on the surface of polymers. Radicals generated in a subsurface layer by PIII treatment diffuse throughout the substrate, forming covalent bonds to molecules when they reach the surface. Understanding and controlling the diffusion of radicals through this layer will enable efficient optimization of this technique. We develop a model based on site to site diffusion according to Fick's second law with temperature activation according to the Arrhenius relation. Using our model, the Arrhenius exponential prefactor (for barrierless diffusion), D0, and activation energy, EA, for a radical to diffuse from one position to another are found to be 3.11 × 10(-17) m(2) s(-1) and 0.31 eV, respectively. The model fits experimental data with a high degree of accuracy and allows for accurate prediction of radical diffusion to the surface. The model makes useful predictions for the lifetime over which the surface is sufficiently active to covalently immobilize biomolecules and it can be used to determine radical fluence during biomolecule incubation for a range of storage and incubation temperatures so facilitating selection of the most appropriate parameters. PMID:26562064

  9. A high-energy, high-current ion implantation system

    NASA Astrophysics Data System (ADS)

    Rose, Peter H.; Faretra, Ronald; Ryding, Geoffery

    1985-01-01

    High current (Pre-DepTM) ion implanters, operating at 80 keV, have met a need in the semiconductor industry. For certain processes, higher energies are required, either to penetrate a surface layer or to place the dopant ion at a greater depth. The Eaton/Nova Model NV10-160 Pre-DepTM Ion Implanter has been developed to meet those special needs. Beam currents as high as 10.0 mA are available at energies up to 160 keV for routine production applications. The system has also been qualified for low current, low dose operation (1011 ions cm-2) and this unique versatility provides the Process and Equipment Engineers with a powerful new tool. The Model NV10-160 also utilizes the Nova-designed, double disk interchange processing system to minimize inactive beam time so that wafer throughputs, up to 300 wafers/h, are achievable on a routine basis. DatalockTM, a computer driven implant monitoring system and AT-4, the Nova cassette-to-cassette wafer loader, are available as standard options. As a production machine, the Model NV10-160 with its high throughput capability, will reduce the implant cost per wafer significantly for doses above 10 × 1015 ions/cm2. Performance patterns are now emerging as some twenty-five systems have now been shipped. This paper summarizes the more important characteristics and reviews the major design features of the NV10-160.

  10. Ion acoustic shock waves in degenerate plasmas

    SciTech Connect

    Akhtar, N.; Hussain, S.

    2011-07-15

    Korteweg de Vries Burgers equation for negative ion degenerate dissipative plasma has been derived using reductive perturbation technique. The quantum hydrodynamic model is used to study the quantum ion acoustic shock waves. The effects of different parameters on quantum ion acoustic shock waves are studied. It is found that quantum parameter, electrons Fermi temperature, temperature of positive and negative ions, mass ratio of positive to negative ions, viscosity, and density ratio have significant impact on the shock wave structure in negative ion degenerate plasma.

  11. Er + medium energy ion implantation into lithium niobate

    NASA Astrophysics Data System (ADS)

    Svecova, B.; Nekvindova, P.; Mackova, A.; Oswald, J.; Vacik, J.; Grötzschel, R.; Spirkova, J.

    2009-05-01

    Erbium-doped lithium niobate (Er:LiNbO3) is a prospective photonics component, operating at 1.5 μm, which could find its use chiefly as an optical amplifier or waveguide laser. In this study, we have focused on the properties of the optically active Er:LiNbO3 layers, which are fabricated by medium energy ion implantation under various experimental conditions. Erbium ions were implanted at energies of 330 and 500 keV with fluences of 1.0 × 1015, 2.5 × 1015 and 1.0 × 1016 cm-2 into LiNbO3 single-crystalline cuts of various orientations. The as-implanted samples were annealed in air at 350 °C for 5 h. The depth distribution and diffusion profiles of the implanted Er were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The projected range RP and projected range straggling ΔRP were calculated employing the SRIM code. The damage distribution and structural changes were described using the RBS/channelling method. Changes of the lithium concentration depth distribution were studied by Neutron Depth Profiling (NDP). The photoluminescence spectra of the samples were measured to determine whether the emission was in the desired region of 1.5 μm. The obtained data made it possible to reveal the relations between the structural changes of erbium-implanted lithium niobate and its luminescence properties important for photonics applications.

  12. An RFQ accelerator system for MeV ion implantation

    NASA Astrophysics Data System (ADS)

    Hirakimoto, Akira; Nakanishi, Hiroaki; Fujita, Hiroyuki; Konishi, Ikuo; Nagamachi, Shinji; Nakahara, Hiroshi; Asari, Masatoshi

    1989-02-01

    A 4-vane-type Radio-Frequency Quadrupole (RFQ) accelerator system for MeV ion implantation has been constructed and ion beams of boron and nitrogen have been accelerated successfully up to an energy of 1.01 and 1.22 MeV, respectively. The acceleration of phosphorus is now ongoing. The design was performed with two computer codes called SUPERFISH and PARMTEQ. The energy of the accelerated ions was measured by Rutherford backscattering spectroscopy. The obtained values agreed well with the designed ones. Thus we have confirmed the validity of our design and have found the possibility that the present RFQ will break through the production-use difficulty of MeV ion implantation.

  13. Ion implantation induced swelling in 6H-SiC

    SciTech Connect

    Nipoti, R.; Albertazzi, E.; Bianconi, M.; Lotti, R.; Lulli, G.; Cervera, M.; Carnera, A.

    1997-06-01

    Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al{sup +} ions in the dose range 1.25{times}10{sup 14}{endash}3{times}10{sup 15}ionscm{sup {minus}2}. Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition. {copyright} {ital 1997 American Institute of Physics.}

  14. Improvement in the Corrosion Resistance of Austenitic Stainless Steel 316L by Ion Implantation

    NASA Astrophysics Data System (ADS)

    Cai, Xun; Feng, Kai

    In the present work, austenitic stainless steel 316L (SS316L) samples were implanted with Ni and Ni-Cr. A nickel-rich layer about 100 nm in thickness and a Ni-Cr enriched layer about 60 nm thick are formed on the surface of SS316L. The effects of ion implantation on the corrosion performance of SS316L are investigated in a 0.5 M H2SO4 with 2 ppm HF solution at 80°C by open circuit potential (OCP), potentiodynamic and potentiostatic tests. The samples after the potentiostatic test are analyzed by XPS. The results indicate that the composition of the passive film change from a mixture of Fe oxides and Cr oxide to a Cr oxide dominated passive film after the potentiostatic test. The solutions after the potentiostatic test are analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The results reveal that Fe is selectively dissolved in all cases and a proper Ni and Ni-Cr implant fluence can greatly improve the corrosion resistance of SS316L in the simulated polymer electrolyte membrane fuel cells (PEMFCS) environment. They are in agreement with the electrochemical test results that the bare SS316L has the highest dissolution rate in both cathode and anode environments and the Ni and Ni-Cr implantation reduce markedly the dissolution rate. After the potentiostatic test the interfacial contact resistance (ICR) values are also measured. Ni and Ni-Cr are enriched in the passive film formed in the simulated PEMFC cathode environment after ion implantation thereby providing better conductivity than that formed in the anode one. A significant improvement of ICR is achieved for the SS316L implanted with Ni and Ni-Cr as compared to the bare SS316L, which is attributed to the reduction in passive layer thickness caused by Ni and Ni-Cr implantation. The ICR values for implanted specimens increase with increasing dose.

  15. p type doping of zinc oxide by arsenic ion implantation

    SciTech Connect

    Braunstein, G.; Muraviev, A.; Saxena, H.; Dhere, N.; Richter, V.; Kalish, R.

    2005-11-07

    p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ({approx}-196 deg. C), followed by a rapid in situ heating of the sample, at 560 deg. C for 10 min, and ex situ annealing at 900 deg. C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10{sup 13} cm{sup -2} was obtained using this approach, following implantation of 150 keV 5x10{sup 14} As/cm{sup 2}. A conventional room-temperature implantation of 1x10{sup 15} As/cm{sup 2}, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10{sup 12} cm{sup -2}.

  16. Ion implantation and annealing studies in III-V nitrides

    SciTech Connect

    Zolper, J.C.; Pearton, S.J.; Williams, J.S.; Tan, H.H.; Karlicek, R.J. Jr.; Stall, R.A.

    1996-12-31

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n{sup +}-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10{sup 16} cm{sup {minus}2} 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.

  17. Nanocomposite formed by titanium ion implantation into alumina

    SciTech Connect

    Spirin, R. E.; Salvadori, M. C. Teixeira, F. S.; Sgubin, L. G.; Cattani, M.; Brown, I. G.

    2014-11-14

    Composites of titanium nanoparticles in alumina were formed by ion implantation of titanium into alumina, and the surface electrical conductivity measured in situ as the implantation proceeded, thus generating curves of sheet conductivity as a function of dose. The implanted titanium self-conglomerates into nanoparticles, and the spatial dimensions of the buried nanocomposite layer can thus be estimated from the implantation depth profile. Rutherford backscattering spectrometry was performed to measure the implantation depth profile, and was in good agreement with the calculated profile. Transmission electron microscopy of the titanium-implanted alumina was used for direct visualization of the nanoparticles formed. The measured conductivity of the buried layer is explained by percolation theory. We determine that the saturation dose, φ{sub 0}, the maximum implantation dose for which the nanocomposite material still remains a composite, is φ{sub 0} = 2.2 × 10{sup 16 }cm{sup −2}, and the corresponding saturation conductivity is σ{sub 0} = 480 S/m. The percolation dose φ{sub c}, below which the nanocomposite still has basically the conductivity of the alumina matrix, was found to be φ{sub c} = 0.84 × 10{sup 16 }cm{sup −2}. The experimental results are discussed and compared with a percolation theory model.

  18. Zinc ion implantation-deposition technique improves the osteoblast biocompatibility of titanium surfaces

    PubMed Central

    LIANG, YONGQIANG; XU, JUAN; CHEN, JING; QI, MENGCHUN; XIE, XUEHONG; HU, MIN

    2015-01-01

    The plasma immersion ion implantation and deposition (PIIID) technique was used to implant zinc (Zn) ions into smooth surfaces of pure titanium (Ti) disks for investigation of tooth implant surface modification. The aim of the present study was to evaluate the surface structure and chemical composition of a modified Ti surface following Zn ion implantation and deposition and to examine the effect of such modification on osteoblast biocompatibility. Using the PIIID technique, Zn ions were deposited onto the smooth surface of pure Ti disks. The physical structure and chemical composition of the modified surface layers were characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. In vitro culture assays using the MG-63 bone cell line were performed to determine the effects of Zn-modified Ti surfaces following PIIID on cellular function. Acridine orange staining was used to detect cell attachment to the surfaces and cell cycle analysis was performed using flow cytometry. SEM revealed a rough ‘honeycomb’ structure on the Zn-modified Ti surfaces following PIIID processing and XPS data indicated that Zn and oxygen concentrations in the modified Ti surfaces increased with PIIID processing time. SEM also revealed significantly greater MG-63 cell growth on Zn-modified Ti surfaces than on pure Ti surfaces (P<0.05). Flow cytometric analysis revealed increasing percentages of MG-63 cells in S phase with increasing Zn implantation and deposition, suggesting that MG-63 apoptosis was inhibited and MG-63 proliferation was promoted on Zn-PIIID-Ti surfaces. The present results suggest that modification with Zn-PIIID may be used to improve the osteoblast biocompatibility of Ti implant surfaces. PMID:25673139

  19. Erbium ion implantation into different crystallographic cuts of lithium niobate

    NASA Astrophysics Data System (ADS)

    Nekvindova, P.; Svecova, B.; Cajzl, J.; Mackova, A.; Malinsky, P.; Oswald, J.; Kolistsch, A.; Spirkova, J.

    2012-02-01

    Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO 3, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence. In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO 3 layers were fabricated by medium energy implantation under various experimental conditions. The Er + ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10 15 to 1.0 × 10 16 ion cm -2 into LiNbO 3 single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He + ions. The photoluminescence spectra of the samples were measured to determine the

  20. Silicon solar cells by ion implantation and pulsed energy processing

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Shaughnessy, T. S.; Greenwald, A. C.

    1976-01-01

    A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

  1. Making CoSi(2) Layers By Ion Implantation

    NASA Technical Reports Server (NTRS)

    Namavar, Fereydoon

    1994-01-01

    Monolithic photovoltaic batteries containing vertical cells include buried CoSi(2) contact layers. Vertical-junction photovoltaic cells in series fabricated in monolithic structure. N- and p-doped silicon layers deposited epitaxially. The CoSi(2) layers, formed by ion implantation and annealing, serve as thin, low-resistance ohmic contacts between cells.

  2. Extreme Precipitation Strengthening in Ion-Implanted Nickel

    SciTech Connect

    Follstaedt, D.M.; Knapp, J.A.; Myers, S.M.; Petersen, G.A.

    1999-05-03

    Precipitation strengthening of nickel was investigated using ion-implantation alloying and nanoindentation testing for particle separations in the nanometer range and volume fractions extending above 10O/O. Ion implantation of either oxygen alone or oxygen plus aluminum at room temperature was shown to produce substantial strengthening in the ion-treated layer, with yield strengths near 5 GPa in both cases. After annealing to 550"C the oxygen-alone layer loses much of the benefit, with its yield strength reduced to 1.2 GP~ but the dual ion-implanted layer retains a substantially enhanced yield strength of over 4 GPa. Examination by transmission electron f microscopy showed very fine dispersions of 1-5 nm diameter NiO and y-A1203 precipitates in the implanted layers before annealing. The heat treatment at 550"C induced ripening of the NiO particles to sizes ranging from 7 to 20 nm, whereas the more stable ~-A1203 precipitates were little changed. The extreme strengthening we observe is in semiquantitative agreement with predictions based on the application of dispersion-hardening theory to these microstructure.

  3. Plasma formed ion beam projection lithography system

    SciTech Connect

    Leung, Ka-Ngo; Lee, Yung-Hee Yvette; Ngo, Vinh; Zahir, Nastaran

    2002-01-01

    A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

  4. Ion acceleration in expanding ionospheric plasmas

    NASA Technical Reports Server (NTRS)

    Singh, Nagendra; Schunk, R. W.

    1986-01-01

    Plasma expansion along the ambient magnetic field in regions of density gradients provides a mechanism for accelerating ions. A brief review of the basic phenomenon of plasma expansion is given. Estimates of the energies of the accelerated ions in an expanding ionospheric plasma along geomagnetic flux tubes are obtained by solving the time-dependent hydrodynamic equations. It is found that, over certain altitude ranges, each ion species can be the most energetic; the maximum energies of the different ions are found to be limited to less than about 10 eV for H(+), 5 eV for He(+), and less than about 1.5 eV for O(+).

  5. Ion implantation for corrosion inhibition of aluminum alloys in saline media

    SciTech Connect

    Williams, J.M. ); Gonzales, A. ); Quintana, J. ); Lee, I.-S.; Buchanan, R.A. ); Burns, F.C.; Culbertson, R.J.; Levy, M. . Materials Technology Lab.); Treglio, J.R. (ISM

    1990-01-01

    The effects of ion implantation treatments on corrosion of 2014 and 1100 aluminum in saline media were investigated. Implanted ions were N, Si, Ti and Cr. Techniques included salt spray testing, electrochemical studies, Rutherford backscattering spectrometry, and profilometry. It was concluded that ion implantation of Cr is of potential practical benefit for corrosion inhibition of 2014 Al in salt environments. 4 refs., 5 figs.

  6. Dependence of implantation sequence on surface blistering characteristics due to H and He ions co-implanted in silicon

    NASA Astrophysics Data System (ADS)

    Liang, J. H.; Hsieh, H. Y.; Wu, C. W.; Lin, C. M.

    2015-12-01

    This study investigated surface blistering characteristics due to H and He ions co-implanted in silicon at room temperature. The H and He ion energies were 40 and 50 keV, respectively, so that their depth profiles were similar. The total implantation fluence for the H and He ions was 5 × 1016 cm-2 under various fluence fractions in the H ions. The implantation sequences under investigation were He + H and H + He. Dynamic optical microscopy (DOM) was employed in order to dynamically analyze surface blistering characteristics. This study used DOM data to construct so-called time-temperature-transformation (T-T-T) curves to easily predict blistering and crater transformation at specific annealing times and temperatures. The results revealed that the curves of blister initialization, crater initialization, and crater completion in the He + H implant occurred at a lower annealing temperature but with a longer annealing time compared to those in the H + He implant. Furthermore, the threshold annealing temperatures for blister and crater formation in the He + H implant were lower than they were in the H + He implant. The size distributions of the blisters and craters in the He + H implant extended wider than those in the H + He implant. In addition, the He + H implant exhibited larger blisters and craters compared to the ones in the H + He implant. Since the former has a higher percentage of exfoliation area than the latter, it is regarded as the more optimal implantation sequence.

  7. Ultrahigh-current-density metal-ion implantation and diamondlike-hydrocarbon films for tribological applications; Final report

    SciTech Connect

    Wilbur, P.J.

    1993-09-01

    The metal-ion-implantation system used to implant metals into substrates are described. The metal vapor required for operation is supplied by drawing sufficient electron current from the plasma discharge to an anode-potential crucible so a solid, pure metal placed in the crucible will be heated to the point of vaporization. The ion-producing, plasma discharge is initiated within a graphite-ion-source body, which operates at high temperature, by using an argon flow that is turned off once the metal vapor is present. Extraction of ion beams several cm in diameter at current densities ranging to several hundred {mu}A/cm{sup 2} on a target 50 cm downstream of the ion source have been demonstrated using Mg, Ag, Cr, Cu, Si, Ti, V, B and Zr. These metals were implanted into over 100 substrates (discs, pins, flats, wires). A model describing thermal stresses induced in materials (e.g. ceramic plates) during high-current-density implantation is presented. Tribological and microstructural characteristics of iron and 304-stainless-steel samples implanted with Ti or B are examined. Diamondlike-hydrocarbon coatings were applied to steel surfaces and found to exhibit good tribological performance.

  8. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    NASA Astrophysics Data System (ADS)

    Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

  9. Plasma-assisted Recoil Implantation for Shallow Boron Doping in Silicon

    NASA Astrophysics Data System (ADS)

    Liu, H. L.; Gearhart, S. S.; Booske, J. H.; Wang, W.

    1997-10-01

    An ion beam mixing technique is used to fabricate ultra-shallow p+/n junctions for the application of sub-micron CMOS source/drain formation. In this method, a thin boron layer is first sputtered onto the Si wafer. Then -3kV argon Plasma Source Ion Implantation (PSII) drives the boron atoms into the Si substrate by means of ion beam mixing. This process avoids the hazardous toxic gases, undesirable F co-implantation and F etching effects. Sub-100nm deep p+/n junctions have been formed with this method. Numerical simulations were performed to predict the recoiled boron profiles, which are in agreement with the experimental data. The boron sputter deposition process has been optimized. Auger electron spectroscopy (AES) confirms high purity of the deposited boron films. Numerical Simulations show that the B films with thickness ranging from 5nm to 10nm result in very similar recoiled B profiles. The thickness of 7.5nm is chosen for the deposited B layer to make the entire process more reproducible. Moreover, a part of the implantation damage will be contained in the B layer, which will be removed prior to the annealing step. This should help to alleviate the transient enhanced B diffusion. The research for the recoil implantation of 7.5nm thick B layer is currently underway.

  10. Inductively generated streaming plasma ion source

    DOEpatents

    Glidden, Steven C.; Sanders, Howard D.; Greenly, John B.

    2006-07-25

    A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam. The beam supplies ions for applications requiring excellent control of ion species, low remittance, high current density, and spatial uniformity.

  11. Plasma sheet ion energization during dipolarization events

    SciTech Connect

    Delcourt, D.C. ); Sauvaud, J.A. )

    1994-01-01

    This paper presents simulation results for acceleration processes for ions during what are referred to as dipolarization events associated with storm activity. Time variations of magnetic fields over cyclotron periods, and generation of electric fields parallel to the geomagnetic field, both contribute to ion acceleration in the plasma sheet. Calculations support the observation of earthward injection of ions during such events.

  12. Versatile, high-sensitivity faraday cup array for ion implanters

    DOEpatents

    Musket, Ronald G.; Patterson, Robert G.

    2003-01-01

    An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10.sup.11 -10.sup.18 ions/cm.sup.2 to be extended to below 10.sup.6 ions/cm.sup.2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm.sup.2 and >750 cm.sup.2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

  13. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon

    NASA Astrophysics Data System (ADS)

    Li, B. S.; Du, Y. Y.; Wang, Z. G.; Shen, T. L.; Li, Y. F.; Yao, C. F.; Sun, J. R.; Cui, M. H.; Wei, K. F.; Zhang, H. P.; Shen, Y. B.; Zhu, Y. B.; Pang, L. L.

    2014-10-01

    Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. <1 0 0>-oriented silicon wafers were implanted with 30 keV helium to a dose of 3 × 1016 He+/cm2 at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed.

  14. Resonance ionization of holmium for ion implantation in microcalorimeters

    NASA Astrophysics Data System (ADS)

    Schneider, F.; Chrysalidis, K.; Dorrer, H.; Düllmann, Ch. E.; Eberhardt, K.; Haas, R.; Kieck, T.; Mokry, C.; Naubereit, P.; Schmidt, S.; Wendt, K.

    2016-06-01

    The determination of the electron neutrino mass by calorimetric measurement of the 163 Ho electron capture spectrum requires ultra-pure samples. Several collaborations, like ECHo or HOLMES, intend to employ microcalorimeters into which 163 Ho is implanted as an ion beam. This makes a selective and additionally very efficient ion source for holmium mandatory. For this purpose, laser resonance ionization of stable holmium 165 Ho was studied, using a three step excitation scheme driven by pulsed Ti:sapphire lasers. Five measurements with sample sizes of 1014 and 1015 atoms were performed for the efficiency investigation. In average, an excellent ionization efficiency of 32(5) % could be shown, demonstrating the suitability for ion beam implantation.

  15. Photographic-image storage in ion-implanted PLZT ceramics

    SciTech Connect

    Peercy, P.C.; Land, C.E.

    1982-01-01

    Photographic images can be stored in transparent lead lanthanum zirconate titanate (PLZT) ceramics using near-UV light with photon energies near the band gap energy of 3.42 eV. Coimplanting inert ions, e.g., Ar, Ne and He, into the surface exposed to image light can increase near-UV photosensitivity by a factor of almost 10/sup 4/, with no degradation of image quality, so that the exposure energy threshold is reduced from approx. 100 mJ/cm/sup 2/ to approx. 10 ..mu..Jcm/sup 2/. Coimplanting chemically active and inert ions, e.g., Al or Cr and Ne, can result in similar improvement of the extrinsic (visible light) photosensitivity and in an essentially flat photoresponse from about 400 to 600 nm. In addition, thermal diffusion of Al followed by Ne implantation yield photosensitivity increases in the near-UV comparable to the best results obtained to date with ion implantation.

  16. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    SciTech Connect

    Feng, Kai; Wang, Yibo; Li, Zhuguo; Chu, Paul K.

    2015-08-15

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.

  17. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    NASA Astrophysics Data System (ADS)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  18. Oxygen and sodium plasma-implanted nickel titanium shape memory alloy: A novel method to promote hydroxyapatite formation and suppress nickel leaching

    NASA Astrophysics Data System (ADS)

    Chan, Y. L.; Yeung, K. W. K.; Lu, W. W.; Ngan, A. H. W.; Luk, K. D. K.; Chan, D.; Wu, S. L.; Liu, X. M.; Chu, Paul K.; Cheung, K. M. C.

    2007-04-01

    This study aims at modifying the surface bioactivity of NiTi by sodium and oxygen plasma immersion ion implantation (PIII). Sodium ions were implanted into oxygen plasma-implanted NiTi and untreated NiTi. X-ray photoelectron spectroscopy (XPS) revealed that more sodium was implanted into the oxygen pre-implanted sample in comparison with the untreated surface. Scanning electron microscopy (SEM) coupled with energy dispersive X-ray analysis (EDX) detected calcium and phosphorus rich deposits on both samples after immersion in simulated body fluids for 7 and 21 days. Inductively-coupled plasma mass spectrometry (ICPMS) conducted on the deposits dissolved in diluted hydrochloric acid showed more calcium on the oxygen PIII samples. The improved corrosion resistance of the oxygen PIII NiTi was retained after sodium PIII as evaluated by potentiodynamic polarization tests. Better spreading and proliferation of osteoblasts were also observed on the treated samples.

  19. III-Nitride ion implantation and device processing

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Pearton, S.J.; Abernathy, C.R.; Wilson, R.G.; Stall, R.A.; Shur, M.

    1996-06-01

    Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor materials; this is also expected for binary III-Nitride materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy of 169 meV. O-implantation has also been studied and shown to yield n-type conduction with an ionization energy of {similar_to}29 meV. Neither Ca or O display measurable redistribution during a 1125 C, 15 s activation anneal which sets an upper limit on their diffusivity at this temperature of 2.7{times}10{sup {minus}13}cm{sup 2}/s.

  20. Miniaturized EAPs with compliant electrodes fabricated by ion implantation

    NASA Astrophysics Data System (ADS)

    Shea, H.

    2011-04-01

    Miniaturizing dielectric electroactive polymer (EAP) actuators will lead to highly-integrated mechanical systems on a chip, combining dozens to thousands of actuators and sensors on a few cm2. We present here µm to mm scale electroactive polymer (EAP) devices, batch fabricated on the chip or wafer scale, based on ion-implanted electrodes. Low-energy (2-10 keV) implantation of gold ions into a silicone elastomer leads to compliant stretchable electrodes consisting of a buried 20 nm thick layer of gold nanoparticles in a silicone matrix. These electrodes: 1) conduct at strains up to 175%, 2) are patternable on the µm scale, 3) have stiffness similar to silicone, 4) have good conductivity, and 5) excellent adhesion since implanted in the silicone. The EAP devices consist of 20 to 30 µm thick silicone membranes with µm to mm-scale ion-implanted electrodes on both sides, bonded to a holder. Depending on electrode shape and membrane size, several actuation modes are possible. Characterization of 3mm diameter bi-directional buckling mode actuators, mm-scale tunable lens arrays, 2-axis beam steering mirrors, as well as arrays of 72 cell-size (100x200 µm2) actuators to apply mechanical strain to single cells are reported. Speeds of up to several kHz are observed.

  1. Xenon diffusion following ion implantation into feldspar - Dependence on implantation dose

    NASA Technical Reports Server (NTRS)

    Melcher, C. L.; Burnett, D. S.; Tombrello, T. A.

    1982-01-01

    The diffusion properties of xenon implanted into feldspar, a major mineral in meteorites and lunar samples, are investigated in light of the importance of xenon diffusion in the interpretation of early solar system chronologies and the retention time of solar-wind-implanted Xe. Known doses of Xe ions were implanted at an energy of 200 keV into single-crystal plagioclase targets, and depth profiles were measured by alpha particle backscattering before and after annealing for one hour at 900 or 1000 C. The fraction of Xe retained following annealing is found to be strongly dependent on implantation dose, being greatest at a dose of 3 x 10 to the 15th ions/sq cm and decreasing at higher and lower doses. Xe retention is also observed to be unaffected by two-step anneals, or by implantation with He or Ar. Three models of the dose-dependent diffusion properties are considered, including epitaxial crystal regrowth during annealing controlled by the extent of radiation damage, the creation of trapping sites by radiation damage, and the inhibition of recrystallization by Xe during annealing

  2. Microwave annealing of ion implanted 6H-SiC

    SciTech Connect

    Gardner, J.A.; Rao, M.V.; Tian, Y.L.; Holland, O.W.; Kelner, G.; Freitas, J.A. Jr.; Ahmad, I.

    1996-12-31

    Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen(N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

  3. Microwave annealing of ion implanted 6H-SiC

    SciTech Connect

    Gardner, J.A.; Rao, M.V.; Tian, Y.L.; Holland, O.W.; Kelner, G.; Freitas, J.A. Jr.; Ahmad, I.

    1996-05-01

    Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1,400 C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1,600 C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

  4. Engineering single photon emitters by ion implantation in diamond.

    PubMed

    Naydenov, B; Kolesov, R; Batalov, A; Meijer, J; Pezzagna, S; Rogalla, D; Jelezko, F; Wrachtrup, J

    2009-11-01

    Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in quantum cryptography. Strong zero phonon line at 470.5 nm allows unambiguous identification of this defect as interstitial-related TR12 color center. PMID:19956415

  5. Industrial hygiene and control technology assessment of ion implantation operations.

    PubMed

    Ungers, L J; Jones, J H

    1986-10-01

    Ion implantation is a process used to create the functional units (pn junctions) of integrated circuits, photovoltaic (solar) cells and other semiconductor devices. During the process, ions of an impurity or a "dopant" material are created, accelerated and imbedded in wafers of silicon. Workers responsible for implantation equipment are believed to be at risk from exposure to both chemical (dopant compounds) and physical (ionizing radiation) agents. In an effort to characterize the chemical exposures, monitoring for chemical hazards was conducted near eleven ion implanters at three integrated circuit facilities, while ionizing radiation was monitored near four of these units at two of the facilities. The workplace monitoring suggests that ion implantation operators routinely are exposed to low-level concentrations of dopants. Although the exact nature of dopant compounds released to the work environment was not determined, area and personal samples taken during normal operating activities found concentrations of arsenic, boron and phosphorous below OSHA Permissible Exposure Limits (PELs) for related compounds; area samples collected during implanter maintenance activities suggest that a potential exists for more serious exposures. The results of badge dosimetry monitoring for ionizing radiation indicate that serious exposures are unlikely to occur while engineering controls remain intact. All emissions were detected at levels unlikely to result in exposures above the OSHA standard for the whole body (1.25 rems per calendar quarter). The success of existing controls in preventing worker exposures is discussed. Particular emphasis is given to the differential exposures likely to be experienced by operators and maintenance personnel.(ABSTRACT TRUNCATED AT 250 WORDS) PMID:3776837

  6. Tailored ion energy distributions on plasma electrodes

    SciTech Connect

    Economou, Demetre J.

    2013-09-15

    As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods include the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.

  7. Rapid thermal process-induced recombination centers in ion implanted silicon

    NASA Astrophysics Data System (ADS)

    Eichhammer, W.; Hage-Ali, M.; Stuck, R.; Siffert, P.

    1990-04-01

    This work presents direct evidence for a correlation between rapid thermal process-induced recombination centers and co-implanted metallic impurities in ion implanted silicon. Experimental evidence includes the dose dependence of the minority carrier diffusion length measured by the SPV technique, SIMS and RBS analysis of high-dose implantations which show the presence of heavy metals, the dependence of the final diffusion lengths on the mass of the implanted ions, as well as the successful modification of an implantation equipment.

  8. Ion composition measurement techniques for space plasmas

    NASA Technical Reports Server (NTRS)

    Gloeckler, George

    1990-01-01

    Plasmas found in space range from the solar wind with a typical temperature of 100,000-1,000,000 K, about 400 km/s bulk flow speed, and high ionization (charge states) of ions, to the hot, slowly moving plasmas in the outer magnetospheres of the giant planets, to the cold, corotating plasmas in inner magnetospheres. Space plasma instruments and techniques are reviewed, with an emphasis on hot plasma composition measurements. Starting with Faraday Cup detectors some 30 years ago, plasma instruments have evolved to the present time-of-flight systems with excellent mass resolution and three-dimensional viewing capabilities.

  9. Effects of ion-implanted C on the microstructure and surface mechanical properties of Fe alloys implanted with Ti

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Knapp, J. A.; Pope, L. E.; Yost, F. G.; Picraux, S. T.

    1984-09-01

    The microstructural and tribological effects of ion implanting C into Ti-implanted, Fe-based alloys are examined and compared to the influence of C introduced by vacuum carburization during Ti implantation alone. The amorphous surface alloy formed by Ti implantation of pure Fe increases in thickness when additional C is implanted at depths containing Ti but beyond the range of carburization. Pin-on-disc tests of 15-5 PH stainless steel show that implantation of both Ti and C reduces friction significantly under conditions where no reduction is obtained by Ti implantation alone; wear depths are also less when C is implanted. All available experimental results can be accounted for by consideration of the thickness and Ti concentration of the amorphous Fe-Ti-C alloy. The thicker amorphous layer on samples implanted with additional C extends tribological benefits to more severe wear regimes.

  10. Surface modification of biomedical implants using ion-beam-assisted sputter deposition

    NASA Astrophysics Data System (ADS)

    Ektessabi, A. M.

    1997-05-01

    Hydroxy-apatite (Ca 10(PO 4) 6(OH) 2), owing to its good bioaffinity and enhancement of osseo-integration, is a potential material for coating on dental and orthopedic implants. At present, hydroxy-apatite is coated on metal implants by a plasma-spraying method or is used in its bulk form in reconstruction surgery. In this paper, experimental results are given for preparation of hydroxy-apatite thin films on various biomedical implant materials using ion-beam sputter deposition and ion-beam-assisted sputter deposition methods. By using the ion-beam-assisted sputter deposition method, the adhesion of hydroxy-apatite thin films to substrate has improved significantly and increased to a level comparable to Ti and Al oxide thin films. Relative atomic densities of Ca, P, O and H in hydroxy-apatite thin films were obtained using ion-beam analysis methods such as RBS, RE-RBS, ERDA, and PIXE. The relative concentrations of Ca, and P were affected by assisting-beam density, and stoichiometric films were obtained for certain assisting-beam current densities.

  11. Chaotic ion motion in magnetosonic plasma waves

    NASA Technical Reports Server (NTRS)

    Varvoglis, H.

    1984-01-01

    The motion of test ions in a magnetosonic plasma wave is considered, and the 'stochasticity threshold' of the wave's amplitude for the onset of chaotic motion is estimated. It is shown that for wave amplitudes above the stochasticity threshold, the evolution of an ion distribution can be described by a diffusion equation with a diffusion coefficient D approximately equal to 1/v. Possible applications of this process to ion acceleration in flares and ion beam thermalization are discussed.

  12. Application of Coaxial Ion Gun for Film Generation and Ion Implantation

    NASA Astrophysics Data System (ADS)

    Takatsu, Mikio; Asai, Tomohiko; Kurumi, Satoshi; Suzuki, Kaoru; Hirose, Hideharu; Masutani, Shigeyuki

    A magnetized coaxial plasma gun (MCPG) is here utilized for deposition on high-melting-point metals. MCPGs have hitherto been studied mostly in the context of nuclear fusion research, for particle and magnetic helicity injection and spheromak formation. During spheromak formation, the electrode materials are ionized and mixed into the plasmoid. In this study, this ablation process by gun-current sputtering is enhanced for metallic thin-film generation. In the proposed system geometry, only ionized materials are electromagnetically accelerated by the self-Lorentz force, with ionized operating gas as a magnetized thermal plasmoid, contributing to the thin-film deposition. This reduces the impurity and non-uniformity of the deposited thin-film. Furthermore, as the ions are accelerated in a parallel direction to the injection axis, vertical implantation of the ions into the substrate surface is achieved. To test a potential application of the developed system, experiments were conducted involving the formation of a buffer layer on hard ceramics, for use in dental materials.

  13. Enhanced cell adhesion to silicone implant material through plasma surface modification.

    PubMed

    Hauser, J; Zietlow, J; Köller, M; Esenwein, S A; Halfmann, H; Awakowicz, P; Steinau, H U

    2009-12-01

    Silicone implant material is widely used in the field of plastic surgery. Despite its benefits the lack of biocompatibility this material still represents a major problem. Due to the surface characteristics of silicone, protein adsorption and cell adhesion on this polymeric material is rather low. The aim of this study was to create a stable collagen I surface coating on silicone implants via glow-discharge plasma treatment in order to enhance cell affinity and biocompatibility of the material. Non-plasma treated, collagen coated and conventional silicone samples (non-plasma treated, non-coated) served as controls. After plasma treatment the change of surface free energy was evaluated by drop-shape analysis. The quality of the collagen coating was analysed by electron microscopy and Time-Of-Flight Secondary Ion Mass Spectrometry. For biocompatibility tests mouse fibroblasts 3T3 were cultivated on the different silicone surfaces and stained with calcein-AM and propidium iodine to evaluate cell viability and adherence. Analysis of the different surfaces revealed a significant increase in surface free energy after plasma pre-treatment. As a consequence, collagen coating could only be achieved on the plasma activated silicone samples. The in vitro tests showed that the collagen coating led to a significant increase in cell adhesion and cell viability. PMID:19641852

  14. Electrostatic ion cyclotron and ion plasma waves in a symmetric pair-ion plasma cylinder.

    PubMed

    Kono, M; Vranjes, J; Batool, N

    2014-03-14

    Complicated wave behavior observed in the cylindrical pair-ion (fullerene) experiments by Oohara and co-workers are now identified to be low harmonic ion cyclotron waves combined with ion plasma oscillations inherent to kinetic theory. The electrostatic dispersion equation derived is based on an approximation for the current from the exact solutions of the characteristic cylindrical geometry form of the Vlasov plasma equation in a uniform magnetized plasma cylinder surrounded by a larger metal boundary outside a vacuum gap, which thus differs from that in unbounded plasmas. Positive and negative ions, differing only in the sign of their charge, respond to a potential in the same time scale and cooperate to reflect the enhanced kinetic orbital behaviors to the macroscopic propagation characteristics. In addition, the experimental value of the Larmor radius (comparable to the discharge radius but small enough to make the analytic approximation useful) makes higher harmonic ion cyclotron effects both observable and calculable with the appropriate approximation for the kinetic theory. PMID:24679299

  15. Develop techniques for ion implantation of PLZT for adaptive optics

    NASA Astrophysics Data System (ADS)

    Craig, R. A.; Batishko, C. R.; Brimhall, J. L.; Pawlewicz, W. T.; Stahl, K. A.

    1989-11-01

    Battelle Pacific Northwest Laboratory (PNL) conducted research into the preparation and characterization of ion-implanted adaptive optic elements based on lead-lanthanum-zirconate-titanate (PLZT). Over the 4-yr effort beginning FY 1985, the ability to increase the photosensitivity of PLZT and extend it to longer wavelengths was developed. The emphasis during the last two years was to develop a model to provide a basis for choosing implantation species and parameters. Experiments which probe the electronic structure were performed on virgin and implanted PLZT samples. Also performed were experiments designed to connect the developing conceptual model with the experimental results. The emphasis in FY 1988 was to extend the photosensitivity out to diode laser wavelengths. The experiments and modelling effort indicate that manganese will form appropriate intermediate energy states to achieve the longer wavelength photosensitivity. Preliminary experiments were also conducted to deposit thin film PLZT.

  16. Charging mechanism during ion implantation without charge compensation

    NASA Astrophysics Data System (ADS)

    Sakai, Shigeki; Fan, Hung-chi; Chen, Emily; Tanjyo, Masayasu

    2006-11-01

    The charge accumulated on an electrode electrically floated during implantation is calculated using a simple model. The model includes the ion beam current, the secondary electron emission, the neutralizing electron current and the leak current through resistance between the electrode and the bulk of wafer. Expressing the leak current with a parameter of relaxation time, it is found that amount of the accumulated charge at the completion of implantation reached at a constant irrespective of the beam current in the condition that the relaxation time is long enough. The experimental result showed that the measured potential of the floated electrode depends on a beam potential as well as the beam current. This result implies that the neutralizing electrons are more effectively transported to the isolated electrode in the high beam current condition compared with in the low beam current condition. We discuss possibility that such charging phenomena may occur in the implantation for BiCMOS or SOI device fabrication.

  17. Charge neutralization apparatus for ion implantation system

    DOEpatents

    Leung, Ka-Ngo; Kunkel, Wulf B.; Williams, Malcom D.; McKenna, Charles M.

    1992-01-01

    Methods and apparatus for neutralization of a workpiece such as a semiconductor wafer in a system wherein a beam of positive ions is applied to the workpiece. The apparatus includes an electron source for generating an electron beam and a magnetic assembly for generating a magnetic field for guiding the electron beam to the workpiece. The electron beam path preferably includes a first section between the electron source and the ion beam and a second section which is coincident with the ion beam. The magnetic assembly generates an axial component of magnetic field along the electron beam path. The magnetic assembly also generates a transverse component of the magnetic field in an elbow region between the first and second sections of the electron beam path. The electron source preferably includes a large area lanthanum hexaboride cathode and an extraction grid positioned in close proximity to the cathode. The apparatus provides a high current, low energy electron beam for neutralizing charge buildup on the workpiece.

  18. Ion Temperature Anisotropies in Helicon Plasmas

    NASA Astrophysics Data System (ADS)

    Balkey, Matthew M.; Boiven, Robert; Keiter, Paul; Kline, John; Scime, Earl; Spangler, Robert

    1999-11-01

    Laser induced fluorescence measurements of the ion temperature in an argon helicon plasma indicate a substantial ion temperature anisotropy (perpendicular over parallel). The perpendicular ion temperature scales linearly with the applied magnetic field strength and also depends on the RF driving frequency and amplitude. We will present measurements of the ion temperature as a function of magnetic field, RF amplitude, and RF frequency. We will also present measurements of the electromagnetic fluctuation spectrum in the source. Preliminary measurements suggest that the RF driving wave may parametrically decay into waves that can couple to the ions, thus providing a path for RF energy directly into the ions.

  19. Ion thruster charge-exchange plasma flow

    NASA Technical Reports Server (NTRS)

    Carruth, M. R., Jr.; Gabriel, S. B.; Kitamura, S.

    1982-01-01

    The electron bombardment ion thruster has been under development for a number of years and during this time, studies of the plasmas produced by the thrusters and their interactions with spacecraft have been evaluated, based on available data. Due to diagnostic techniques used and facility effects, there is uncertainty as to the reliability of data from these early studies. This paper presents data on the flow of the charge-exchange plasma produced just downstream of the thruster's ion optics. The 'end-effect' of a cylindrical Langmuir probe is used to determine ion density and directed ion velocity. Results are compared with data obtained from a retarding potential analyzer-Faraday cup.

  20. Synergistic effects of dual Zn/Ag ion implantation in osteogenic activity and antibacterial ability of titanium.

    PubMed

    Jin, Guodong; Qin, Hui; Cao, Huiliang; Qian, Shi; Zhao, Yaochao; Peng, Xiaochun; Zhang, Xianlong; Liu, Xuanyong; Chu, Paul K

    2014-09-01

    Zinc (Zn) and silver (Ag) are co-implanted into titanium by plasma immersion ion implantation. A Zn containing film with Ag nanoparticles (Ag NPs) possessing a wide size distribution is formed on the surface and the corrosion resistance is improved due to the micro-galvanic couples formed by the implanted Zn and Ag. Not only are the initial adhesion, spreading, proliferation and osteogenic differentiation of rBMSCs observed from the Zn/Ag implanted Ti in vitro, but also bacteria killing is achieved both in vitro and in vivo. Electrochemical polarization and ion release measurements suggest that the excellent osteogenic activity and antibacterial ability of the Zn/Ag co-implanted titanium are related to the synergistic effect resulting from the long-range interactions of the released Zn ions and short-range interactions of the embedded Ag NPs. The Zn/Ag co-implanted titanium offers both excellent osteogenic activity and antibacterial ability and has large potential in orthopedic and dental implants. PMID:24947228

  1. Ion plasma wave and its instability in interpenetrating plasmas

    SciTech Connect

    Vranjes, J.; Kono, M.

    2014-04-15

    Some essential features of the ion plasma wave in both kinetic and fluid descriptions are presented. The wave develops at wavelengths shorter than the electron Debye radius. Thermal motion of electrons at this scale is such that they overshoot the electrostatic potential perturbation caused by ion bunching, which consequently propagates as an unshielded wave, completely unaffected by electron dynamics. So in the simplest fluid description, the electrons can be taken as a fixed background. However, in the presence of magnetic field and for the electron gyro-radius shorter than the Debye radius, electrons can participate in the wave and can increase its damping rate. This is determined by the ratio of the electron gyro-radius and the Debye radius. In interpenetrating plasmas (when one plasma drifts through another), the ion plasma wave can easily become growing and this growth rate is quantitatively presented for the case of an argon plasma.

  2. Upgraded vacuum arc ion source for metal ion implantation

    SciTech Connect

    Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.; Brown, I. G.

    2012-02-15

    Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed ''Mevva,'' for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

  3. Mechanical properties of ion-implanted tungsten-5 wt% tantalum

    NASA Astrophysics Data System (ADS)

    Armstrong, D. E. J.; Wilkinson, A. J.; Roberts, S. G.

    2011-12-01

    Ion implantation has been used to simulate neutron damage in W-5wt%Ta alloy manufactured by arc melting. Implantations were carried out at damage levels of 0.07, 1.2, 13 and 33 displacements per atom (dpa). The mechanical properties of the ion-implanted layer were investigated by nanoindentation. The hardness increases rapidly from 7.3 GPa in the unimplanted condition to 8.8 GPa at 0.07 dpa. Above this damage level, the increase in hardness is lower, and the hardness change saturates by 13 dpa. In the initial portion of the load-displacement curves, the indentations in unimplanted material show a large 'initial pop-in' corresponding to the onset of plasticity. This is not seen in the implanted samples at any doses. The change in plasticity has also been studied using the nanoindenter in scanning mode to produce a topographical scan around indentations. In the unimplanted condition there is an extensive pile-up around the indentation. At damage levels of 0.07 and 1.2 dpa the extent and height of pile-up are much less. The reasons for this are under further investigation.

  4. Temperature behavior of damage in sapphire implanted with light ions

    NASA Astrophysics Data System (ADS)

    Alves, E.; Marques, C.; Sáfrán, G.; McHargue, Carl J.

    2009-05-01

    In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016-1 × 1017 cm-2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm-2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.

  5. Oxidation of ion-implanted NiAl

    SciTech Connect

    Hanrahan, R.J. Jr.; Verink, E.D. Jr.; Withrow, S.P.

    1994-12-31

    The oxidation of NiAl is complicated by the formation of transient alumina phases which result in convoluted scales which are prone to spallation. We have investigated high-dose implantation of oxygen as a technique for forming a protective oxide layer on the surface of NiAl and thereby bypassing the conditions that lead to transient oxide formation. Single crystal specimens of high purity NiAl were implanted with 1 {times} 10{sup 18} {sup 18}O ions/cm{sup 2} at 160 keV. Implanted specimens were annealed for times ranging from 5 to 60 minutes in a reducing atmosphere. Oxidation experiments were conducted for periods ranging from 1 hour to 42 hours under both cyclic and isothermal conditions. Specimens in the as-implanted, annealed, and oxidized conditions were examined using Auger electron microscopy. Oxygen implantation followed by annealing was found to form an epitaxial oxide layer. This layer is stable for the duration of the oxidation experiments conducted in this study, and was found to result in reduced oxidation and improved resistance to scale spallation.

  6. ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing.

    PubMed

    Xiang, X; Zu, X T; Zhu, S; Wei, Q M; Zhang, C F; Sun, K; Wang, L M

    2006-05-28

    ZnO nanoparticles were fabricated in sapphire (α-Al(2)O(3) single crystal) by Zn ion implantation (48 keV) at an ion fluence of 1 × 10(17) cm(-2) and subsequent thermal annealing in a flowing oxygen atmosphere. Transmission electron microscopy (TEM) analysis revealed that metallic Zn nanoparticles of 3-10 nm in dimensions formed in the as-implanted sample and that ZnO nanoparticles of 10-12 nm in dimensions formed after annealing at 600 °C. A broad absorption band, peaked at 280 nm, appeared in the as-implanted crystal, due to surface plasma resonance (SPR) absorption of metallic Zn nanoparticles. After annealing at 600 °C, ZnO nanoparticles resulted in an exciton absorption peak at 360 nm. The photoluminescence (PL) of the as-implanted sample was very weak when using a He-Cd 325 nm line as the excitation source. However, two emission peaks appeared in the PL spectrum of ZnO nanopraticles, i.e., one ultraviolet (UV) peak at 370 nm and the other a green peak at 500 nm. The emission at 500 nm is stronger and has potential applications in green/blue light-emitting devices. PMID:21727517

  7. Plasma Surface Functionalized Polyetheretherketone for Enhanced Osseo-Integration at Bone-Implant Interface.

    PubMed

    Zhao, Ying; Wong, Hoi Man; Lui, So Ching; Chong, Eva Y W; Wu, Guosong; Zhao, Xiaoli; Wang, Chong; Pan, Haobo; Cheung, Kenneth M C; Wu, Shuilin; Chu, Paul K; Yeung, Kelvin W K

    2016-02-17

    This study aims at improving osseo-integration at the bone-implant interface of polyetheretherketone (PEEK) by water (H2O) and ammonia (NH3) plasma immersion ion implantation (PIII). The pertinent surface characteristics including surface energy, roughness, morphology, and chemical composition are investigated systematically and the in vitro biological performance is evaluated by cell adhesion and proliferation, alkaline phosphatase (ALP) activity, real-time RT-PCR evaluation, and mineralization tests. In vivo osseo-integration is examined via implanting samples into the distal femur of the rats. The hydrophilicity, surface roughness, cell adhesion, and proliferation, ALP activity, and osteogenic differentiation after H2O PIII or NH3 PIII are improved significantly. Furthermore, substantially enhanced osseo-integration is achieved in vivo. Nonline-of-sight plasma surface functionalization, which is particularly suitable for biomedical implants with an irregular geometry, does not alter the bulk compressive yield strength and elastic modulus of the materials. Consequently, the favorable bulk attributes of PEEK are preserved while the surface biological properties are enhanced thus boding well for wider orthopedic application of the biopolymer. PMID:26796319

  8. Ion beams from laser-generated plasmas

    NASA Technical Reports Server (NTRS)

    Hughes, R. H.; Anderson, R. J.; Gray, L. G.; Rosenfeld, J. P.; Manka, C. K.; Carruth, M. R.

    1980-01-01

    The paper describes the space-charge-limited beams produced by the plasma blowoffs generated by 20-MW bursts of 1.06-micron radiation from an active Q-switched Nd:YAG laser. Laser power densities near 10 to the 11th/sq cm on solid targets generate thermalized plasma plumes which drift to a 15-kV gridded extraction gap where the ions are extracted, accelerated, and electrostatically focused; the spatially defined ion beams are then magnetically analyzed to determine the charge state content in the beams formed from carbon, aluminum, copper, and lead targets. This technique preserves time-of-flight (TOF) information in the plasma drift region, which permits plasma ion temperatures and mass flow velocities to be determined from the Maxwellian ion curve TOF shapes for the individual charge species.

  9. Reactive-element effect studied using ion implantation

    SciTech Connect

    King, W.E.; Grabowski, K.S.

    1988-11-01

    Implantation of reactive elements into metals that form chromia layers upon exposure to high temperature oxidizing environments has a very large effect on the growth rate of the oxide and adhesion of the oxide to the base alloy. We have investigated the effect of Y ion implantation on the high temperature oxidation of Fe-24Cr using Rutherford backscattering spectroscopy, secondary ion mass spectroscopy, and electron microscopy. Analytical tools have been applied to determine the spatial distribution of Y, the microstructure of the oxide, and contribution of oxygen transport to the oxidation process. Results are compared with similar experiments in Fe-Cr alloys with Y additions and with results of cation and anion tracer diffusion experiments. 51 refs., 17 figs., 3 tabs.

  10. The enhanced anticoagulation for graphene induced by COOH+ ion implantation

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqi; Cao, Ye; Zhao, Mengli; Deng, Jianhua; Li, Xifei; Li, Dejun

    2015-01-01

    Graphene may have attractive properties for some biomedical applications, but its potential adverse biological effects, in particular, possible modulation when it comes in contact with blood, require further investigation. Little is known about the influence of exposure to COOH+-implanted graphene (COOH+/graphene) interacting with red blood cells and platelets. In this paper, COOH+/graphene was prepared by modified Hummers' method and implanted by COOH+ ions. The structure and surface chemical and physical properties of COOH+/graphene were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and contact angle measurement. Systematic evaluation of anticoagulation, including in vitro platelet adhesion assays and hemolytic assays, proved that COOH+/graphene has significant anticoagulation. In addition, at the dose of 5 × 1017 ions/cm2, COOH+/graphene responded best on platelet adhesion, aggregation, and platelet activation.

  11. Indium Phosphide Nanocrystals Formed in Silica by Sequential Ion Implantation

    SciTech Connect

    Denmark, D.; Ueda, A.; Shao, C. L.; Wu, M. H.; Mu, R.; White, Clark W; Vlahovic, B.; Muntele, C. I.; Ila, Dr. Daryush; Liu, Y. C.

    2005-01-01

    Fused silica substrates were implanted with: (1) phosphorus only, (2) indium only, and (3) phosphorus plus indium ions. Vibrational and electronic characterizations have been performed on the P only and In only samples to obtain an understanding of the thermal annealing behavior in order to obtain a meaningful guide for the fabrication of InP quantum dots (QDs) formed by sequential ion implantation of In and P in SiO{sub 2}. Thermal annealing procedures for InP synthesis have been established and InP quantum dots are confirmed by TEM, XRD and far infrared measurements. Far IR spectra show a single resonance at 323 cm{sup -1} rather than two absorption peaks in its counterpart of bulk InP crystals. The single band absorption is attributed to the surface phonon of InP quantum dots which will appear between transverse optical (TO) and longitudinal optical (LO) phonon modes of the bulk.

  12. Thermal stability of ion-implanted ZnO

    SciTech Connect

    Coleman, V; Tan, H; Jagadish, C; Kucheyev, S; Zou, J

    2005-06-16

    Zinc oxide single crystals implanted at room temperature with high-dose (1.4 x 10{sup 17} cm{sup -2}) 300 keV As{sup +} ions are annealed at 1000-1200 C. Damage recovery is studied by a combination of Rutherford backscattering/ channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy (AFM). Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily-damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. Such a relatively poor thermal stability of heavily-damaged ZnO has significant implications for understanding results on thermal annealing of ion-implanted ZnO.

  13. FIM/IAP/TEM studies of ion implanted nickel emitters

    SciTech Connect

    Walck, S.D.; Hren, J.J.

    1985-01-01

    Accurate depth profiling of implanted hydrogen and its isotopes in metals is extremely important. Field ion microscopy and atom-probe techniques provide the most accurate depth profiling analytical method of any available. In addition, they are extremely sensitive to hydrogen. This paper reports our early work on hydrogen trapping at defects in metals using the Field Ion Microscope/Imaging Atom Probe (FIM/IAP). Our results deal primarily with the control experiments required to overcome instrumental difficulties associated with in situ implantation and the influence of a high electric field. Transmission Electron Microscopy (TEM) has been used extensively to independently examine the influence of high electric fields on emitters. 11 references, 7 figures.

  14. Tribological properties changes of H13 steel induced by MEVVA Ta ion implantation*1

    NASA Astrophysics Data System (ADS)

    Jianhua, Yang; Tonghe, Zhang

    2004-05-01

    The tribological properties of Ta-implanted H13 steel was studied using a metal vapor vacuum arc (MEVVA) ion source. The doses of Ta and C ions implanted on H13 steel were 5×10 17 and 2×10 17 cm -2, respectively. The extraction voltages were 48 kV for Ta implantation and 30 kV for C implantation. Rutherford backscattering spectrum (RBS) was used to measure the surface composition of the samples implanted. The observation of phase induced by Ta, C implantation was carried out by grazing-angle X-ray diffraction (GXRD). The wear test of the implanted surface revealed that Ta+C dual implantation reduced the wear of the implanted steel by nearly a factor of 2. This wear mechanism of the Ta-implanted steel was compared with that of Ti implantation.

  15. Calcium Plasma Implanted Titanium Surface with Hierarchical Microstructure for Improving the Bone Formation.

    PubMed

    Cheng, Mengqi; Qiao, Yuqin; Wang, Qi; Jin, Guodong; Qin, Hui; Zhao, Yaochao; Peng, Xiaochun; Zhang, Xianlong; Liu, Xuanyong

    2015-06-17

    Introducing hierarchical microstructure and bioactive trace elements simultaneously onto the surface of titanium implant is a very effective way to improve the osseointegration between bone and implant. In this work, hierarchical topography was prepared on Ti surface via acid etching and sandblasting (SLA) to form micropits and microcavities then underwent Ca plasma immersion ion implantation (Ca-PIII) process. The surface wettability and roughness did not change obviously before and after Ca-PIII process. The in vitro evaluations including cell adhesion, activity, alkaline phosphatase (ALP), osteogenic genes (Runx2, OSX, ALP, BSP, Col1a1, OPN, and OC), and protein (BSP, Col1a1, OPN, and OC) expressions revealed that the introduction of Ca ions onto the surface of SLA-treated Ti can promote greater osteoblasts adhesion, spread and proliferation, which in return further accelerated the maturation and mineralization of osteoblasts. More importantly, in vivo evaluations including Micro-CT evaluation, histological observations, push-out test, sequential fluorescent labeling and histological observations verified that Ca-SLA-treated Ti implants could efficiently promote new bone formation in early times. These promising results suggest that Ca-SLA-treated Ti has the potential for future application in orthopedic field. PMID:26020570

  16. PIXE and micro-PIXE studies of ion release around endosseous implants in animals

    NASA Astrophysics Data System (ADS)

    Egeni, G. P.; Jaksic, M.; Moschini, G.; Passi, P.; Piattelli, A.; Rossi, P.; Rudello, V.; Tauro, L.

    1996-04-01

    The so-called "osseointegration" of oral and orthopedic implants means that newly-formed bone embeds the alloplastic implant materials allowing long-term clinical success. Commercially pure smooth titanium, rough titanium (sand blasted or plasma spray coated), hydroxylapatite and other coatings present different patterns, especially in the early healing phase after surgery. PIXE and micro-PIXE analysis are to be considered effective techniques to measure ion diffusion at the implant-bone interface, and to evaluate the possible diffusion of metal into the organism. Investigations were carried out in rabbits, both with PIXE and micro-PIXE, to evaluate a possible release of titanium from implants into the tissues and to measure other elements at the bone-implant border. Preliminary results suggest that a minor diffusion of titanium exists, even if probably without any significant clinical disturbance. Indeed, there is some evidence of initial titanium accumulation in some organs after six months. A possible deposition of calcium and phosphorus on the metal might indicate a good biological behavior of titanium.

  17. Urinary catheter with polyurethane coating modified by ion implantation

    NASA Astrophysics Data System (ADS)

    Kondyurina, I.; Nechitailo, G. S.; Svistkov, A. L.; Kondyurin, A.; Bilek, M.

    2015-01-01

    A low friction urinary catheter that could be used without a lubricant is proposed in this work. A polyurethane coating was synthesised on the surface of a metal guide wire catheter. Ion implantation was applied to surface modify the polyurethane coating. FTIR ATR, wetting angle, AFM and friction tests were used for analysis. Low friction was found to be provided by the formation of a hard carbonised layer on the polyurethane surface.

  18. Highly antibacterial UHMWPE surfaces by implantation of titanium ions

    NASA Astrophysics Data System (ADS)

    Delle Side, D.; Nassisi, V.; Giuffreda, E.; Velardi, L.; Alifano, P.; Talà, A.; Tredici, S. M.

    2014-07-01

    The spreading of pathogens represents a serious threat for human beings. Consequently, efficient antimicrobial surfaces are needed in order to reduce risks of contracting severe diseases. In this work we present the first evidences of a new technique to obtain a highly antibacterial Ultra High Molecular Weight Polyethylene (UHMWPE) based on a non-stoichiometric titanium oxide coating, visible-light responsive, obtained through ion implantation.

  19. Plasma neutralization models for intense ion beam transport in plasma

    SciTech Connect

    Kaganovich, Igor D.; Startsev, Edward A.; Davidson, Ronald C.; O'Rourke, Sean; Lee, Edward P.

    2003-05-01

    Plasma neutralization of an intense ion pulse is of interest for many applications, including plasma lenses, heavy ion fusion, cosmic ray propagation, etc. An analytical electron fluid model has been developed based on the assumption of long charge bunches (l{sub b} >> r{sub b}). Theoretical predictions are compared with the results of calculations utilizing a particle-in-cell (PIC) code. The cold electron fluid results agree well with the PIC simulations for ion beam propagation through a background plasma. The analytical predictions for the degree of ion beam charge and current neutralization also agree well with the results of the numerical simulations. The model predicts very good charge neutralization (>99%) during quasi-steady-state propagation, provided the beam pulse duration {tau}{sub b} is much longer than the electron plasma period 2{pi}/{omega}{sub p}, where {omega}{sub p} = (4{pi}e{sup 2}n{sub p}/m){sup 1/2} is the electron plasma frequency, and n{sub p} is the background plasma density. In the opposite limit, the beam pulse excites large-amplitude plasma waves. The analytical formulas derived in this paper can provide an important benchmark for numerical codes, and provide scaling relations for different beam and plasma parameters.

  20. Energy loss of ions implanted in MOS dielectric films

    NASA Astrophysics Data System (ADS)

    Shyam, Radhey

    Energy loss measurements of ions in the low kinetic energy regime have been made on as-grown SiO2(170-190nm) targets. Singly charged Na + ions with kinetic energies of 2-5 keV and highly charged ions Ar +Q (Q=4, 8 and 11) with a kinetic energy of 1 keV were used. Excitations produced by the ion energy loss in the oxides were captured by encapsulating the irradiated oxide under a top metallic contact. The resulting Metal-Oxide-Semiconductor (MOS) devices were probed with Capacitance-Voltage (C V) measurements and extracted the flatband voltages from the C-V curves. The C-V results for singly charged ion experiments reveal that the changes in the flatband voltage and slope for implanted devices relative to the pristine devices can be used to delineate effects due to implanted ions only and ion induced damage. The data shows that the flatband voltage shifts and C-V slope changes are energy dependent. The observed changes in flatband voltage which are greater than those predicted by calculations scaled for the ion dose and implantation range (SRIM). These results, however, are consistent with a columnar recombination model, where electron-hole pairs are created due to the energy deposited by the implanted ions within the oxide. The remaining holes left after recombination losses are diffused through the oxide at the room temperature and remain present as trapped charges. Comparison of the data with the total number of the holes generated gives a fractional yield of 0.0124 which is of the same order as prior published high energy irradiation experiments. Additionally, the interface trap density, extracted from high and low frequency C-V measurements is observed to increase by one order of magnitude over our incident beam energy. These results confirm that dose- and kinetic energy -dependent effects can be recorded for singly charged ion irradiation on oxides using this method. Highly charged ion results also confirm that dose as well as and charge-dependent effects can

  1. Ca and O ion implantation doping of GaN

    SciTech Connect

    Zolper, J.C.; Wilson, R.G.; Pearton, S.J.; Stall, R.A.

    1996-04-01

    {ital p}- and {ital n}-type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100{degree}C or higher is required to achieve {ital p}-type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of {approximately}100{percent}. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O-implanted GaN displays an ionization level of {approximately}29 meV but with an activation efficiency of only 3.6{percent} after a 1050{degree}C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125{degree}C anneal. {copyright} {ital 1996 American Institute of Physics.}

  2. Observations of Ag diffusion in ion implanted SiC

    DOE PAGESBeta

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

  3. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    NASA Astrophysics Data System (ADS)

    Malau, Viktor; Ilman, Mochammad Noer; Iswanto, Priyo Tri; Jatisukamto, Gaguk

    2016-03-01

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10-2 torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10-6 mbar, a fluence of 2 x 1017 ions/cm2, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  4. Bubble formation in Zr alloys under heavy ion implantation

    SciTech Connect

    Pagano, L. Jr.; Motta, A.T.; Birtcher, R.C.

    1995-12-01

    Kr ions were used in the HVEM/Tandem facility at ANL to irradiate several Zr alloys, including Zircaloy-2 and -4, at 300-800 C to doses up to 2{times}10{sup 16}ion.cm{sup -2}. Both in-situ irradiation of thin foils as well as irradiation of bulk samples with an ion implanter were used in this study. For the thin foil irradiations, a distribution of small bubbles in the range of 30-100 {angstrom} was found at all temperatures with the exception of the Cr-rich Valloy where 130 {angstrom} bubbles were found. Irradiation of bulk samples at 700-800 C produced large faceted bubbles up to 300 {angstrom} after irradiation to 2{times}10{sup 16}ion.cm{sup -2}. Results are examined in context of existing models for bubble formation and growth in other metals.

  5. Modulational instability of ion acoustic wave with warm ions in electron-positron-ion plasmas

    SciTech Connect

    Mahmood, S.; Siddiqui, Sadiya; Jehan, Nusrat

    2011-05-15

    The nonlinear amplitude modulation of ion acoustic wave is studied in the presence of warm ions in unmagnetized electron-positron-ion plasmas. The Krylov-Bogoliubov-Mitropolsky (KBM) method is used to derive the nonlinear Schroedinger equation. The dispersive and nonlinear coefficients are obtained which depends on the ion temperature and positron density in electron-positron-ion plasmas. The modulationally stable and unstable regions are studied numerically for a wide range of wave number. It is found that both ion temperature and positron density play a significant role in the formation of bright and dark envelope solitons in electron-positron-ion plasmas.

  6. Ion response in a magnetized flowing plasma

    NASA Astrophysics Data System (ADS)

    Kählert, Hanno; Joost, Jan-Philip; Ludwig, Patrick; Bonitz, Michael

    2014-10-01

    We investigate the influence of an external magnetic field on streaming ions in a dusty plasma. The magnetic field is chosen parallel to an external electric field, which accelerates the ions and gives rise to a non-Maxwellian distribution function. The ion susceptibility is derived from a kinetic equation, where ion-neutral collisions are taken into account via a Bhatnagar-Gross-Krook collision term. The properties of the response function and the angular dependence in the anisotropic plasma are discussed. The modified ion response significantly changes the effective interaction between the dust particles. Here, we use the response function to study the influence of magnetized flowing ions on the dispersion of dust density waves and compare the screened dust potential with calculations based on a shifted Maxwellian distribution. We acknowledge financial support from the DFG via SFB-TR24, projects A7 and A9.

  7. Mechanical properties of ion-beam-textured surgical implant alloys

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.

    1977-01-01

    An electron-bombardment Hg ion thruster was used as an ion source to texture surfaces of materials used to make orthopedic and/or dental prostheses or implants. The materials textured include 316 stainless steel, titanium-6% aluminum, 4% vanadium, and cobalt-20% chromium, 15% tungsten. To determine the effect of ion texturing on the ultimate strength and yield strength, stainless steel and Co-Cr-W alloy samples were tensile tested to failure. Three types of samples of both materials were tested. One type was ion-textured (the process also heats each sample to 300 C), another type was simply heated to 300 C in an oven, and the third type was untreated. Stress-strain diagrams, 0.2% offset yield strength data, total elongation data, and area reduction data are presented. Fatigue specimens of ion textured and untextured 316 stainless steel and Ti-6% Al-4% V were tested. Included as an ion textured sample is a Ti-6% Al-4% V sample which was ion machined by means of Ni screen mask so as to produce an array of 140 mu m x 140 mu m x 60 mu m deep pits. Scanning electron microscopy was used to characterize the ion textured surfaces.

  8. Ion beam analysis of aluminium ion implanted titanium diboride thin films

    NASA Astrophysics Data System (ADS)

    Mollica, S.; Sood, D. K.; Evans, P. J.; Dytlewski, N.; Short, K. T.

    2002-05-01

    Titanium diboride is often selected for protective coatings due to its high hardness and wear resistance. However, its possible high temperature applications are limited because it exhibits poor oxidation resistance at elevated temperatures. Through ion beam modification, it was anticipated that a stable oxidation barrier could form via the formation of "metastable phases" not otherwise observed in stoichiometric TiB 2. Titanium diboride films were deposited onto single-crystal Si(1 0 0) substrates using DC magnetron sputtering. MEVVA ion implantation was then performed using an extraction voltage of 40 kV. Selected samples were subjected to post-implantation vacuum annealing prior to oxidation, thus comparing the behaviour of crystalline and amorphous films. Results show that aluminium ion implantation reduces the oxidation rate of DC magnetron sputtered titanium diboride thin films within the experimental temperature range.

  9. Experimental results of a dual-beam ion source for 200 keV ion implanter

    SciTech Connect

    Chen, L. H. Cui, B. Q.; Ma, R. G.; Ma, Y. J.; Tang, B.; Huang, Q. H.; Jiang, W. S.; Zheng, Y. N.

    2014-02-15

    A dual beam ion source for 200 keV ion implanter aimed to produce 200 keV H{sub 2}{sup +} and He{sup +} beams simultaneously has been developed. Not suitable to use the analyzing magnet, the purity of beam extracted from the source becomes important to the performance of implanter. The performance of ion source was measured. The results of experiments show that the materials of inlet tube of ion source, the time of arc ionization in ion source, and the amount of gas flow have significant influence on the purity of beam. The measures by using copper as inlet tube material, long time of arc ionization, and increasing the inlet of gas flow could effectively reduce the impurity of beam. And the method using the gas mass flow controller to adjust the proportion of H{sub 2}{sup +} and He{sup +} is feasible.

  10. Applications of ion implantation to high performance, radiation tolerant silicon solar cells

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Matthei, K. W.

    1979-01-01

    Progress in the development of ion implanted silicon solar cells is reported. Effective back surface preparation by implantation, junction processing to achieve high open circuit voltages in low-resistivity cells, and radiation tolerance cells are among the topics studied.

  11. Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.

    1983-01-01

    For the ion implantation tooling was fabricated with which to hold dendritic web samples. This tooling permits the expeditious boron implantation of the back to form the back surface field (BSF). Baseline BSF web cells were fabricated.

  12. High frequency plasma generator for ion thrusters

    NASA Technical Reports Server (NTRS)

    Goede, H.; Divergilio, W. F.; Fosnight, V. V.; Komatsu, G.

    1984-01-01

    The results of a program to experimentally develop two new types of plasma generators for 30 cm electrostatic argon ion thrusters are presented. The two plasma generating methods selected for this study were by radio frequency induction (RFI), operating at an input power frequency of 1 MHz, and by electron cyclotron heating (ECH) at an operating frequency of 5.0 GHz. Both of these generators utilize multiline cusp permanent magnet configurations for plasma confinement and beam profile optimization. The program goals were to develop a plasma generator possessing the characteristics of high electrical efficiency (low eV/ion) and simplicity of operation while maintaining the reliability and durability of the conventional hollow cathode plasma sources. The RFI plasma generator has achieved minimum discharge losses of 120 eV/ion while the ECH generator has obtained 145 eV/ion, assuming a 90% ion optical transparency of the electrostatic acceleration system. Details of experimental tests with a variety of magnet configurations are presented.

  13. Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1996-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6

  14. Hydrophilic property by contact angle change of ion implanted polycarbonate

    SciTech Connect

    Lee, Chan Young; Kil, Jae Keun

    2008-02-15

    In this study, ion implantation was performed onto a polymer, polycarbonate (PC), in order to investigate surface hydrophilic property through contact angle measurement. PC was irradiated with N, Ar, and Xe ions at the irradiation energy of 20-50 keV and the dose range of 5x10{sup 15}, 1x10{sup 16}, 7x10{sup 16} ions/cm{sup 2}. The contact angle of water was estimated by means of the sessile drop method and was reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural properties are discussed in view of Furier transform infrared and x-ray photoelectron spectroscopy, which shows increasing C-O bonding and C-C bonding. The surface roughness examined by atomic force microscopy measurement changed smoothly from 3.59 to 2.22 A as the fluence increased. It is concluded that the change in wettability may be caused by surface carbonization and oxidation as well as surface roughness.

  15. FeN foils by nitrogen ion-implantation

    SciTech Connect

    Jiang, Yanfeng; Wang, Jian-Ping; Al Mehedi, Md; Fu, Engang; Wang, Yongqiang

    2014-05-07

    Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride foil samples prepared with different nitrogen ion fluences were characterized. α″-Fe{sub 16}N{sub 2} phase in iron nitride foil samples was obtained and confirmed by the proposed approach. A hard magnetic property with coercivity up to 780 Oe was achieved for the FeN foil samples bonded on Si substrate. The feasibility of using nitrogen ion implantation techniques to prepare FeN foil samples up to 500 nm thickness with a stable martensitic phase under high ion fluences has been demonstrated. A possible mechanism was proposed to explain this result. This proposed method could potentially be an alternative route to prepare rare-earth-free FeN bulk magnets by stacking and pressing multiple free-standing thick α″-Fe{sub 16}N{sub 2} foils together.

  16. Assessment of Atmospheric Pressure Plasma Treatment for Implant Osseointegration

    PubMed Central

    Danna, Natalie R.; Beutel, Bryan G.; Tovar, Nick; Witek, Lukasz; Marin, Charles; Granato, Rodrigo; Suzuki, Marcelo; Coelho, Paulo G.

    2015-01-01

    This study assessed the osseointegrative effects of atmospheric pressure plasma (APP) surface treatment for implants in a canine model. Control surfaces were untreated textured titanium (Ti) and calcium phosphate (CaP). Experimental surfaces were their 80-second air-based APP-treated counterparts. Physicochemical characterization was performed to assess topography, surface energy, and chemical composition. One implant from each control and experimental group (four in total) was placed in one radius of each of the seven male beagles for three weeks, and one implant from each group was placed in the contralateral radius for six weeks. After sacrifice, bone-to-implant contact (BIC) and bone area fraction occupancy (BAFO) were assessed. X-ray photoelectron spectroscopy showed decreased surface levels of carbon and increased Ti and oxygen, and calcium and oxygen, posttreatment for Ti and CaP surfaces, respectively. There was a significant (P < 0.001) increase in BIC for APP-treated textured Ti surfaces at six weeks but not at three weeks or for CaP surfaces. There were no significant (P = 0.57) differences for BAFO between treated and untreated surfaces for either material at either time point. This suggests that air-based APP surface treatment may improve osseointegration of textured Ti surfaces but not CaP surfaces. Studies optimizing APP parameters and applications are warranted. PMID:26090443

  17. Defect studies of zirconia implanted by high energy Xe ions

    NASA Astrophysics Data System (ADS)

    Melikhova, O.; Čížek, J.; Procházka, I.; Hruška, P.; Skuratov, V. A.; Konstantinova, T. E.; Danilenko, I. A.

    2016-01-01

    In the present work positron lifetime spectroscopy was employed for characterization of radiation-induced defects in yttria stabilized zirconia (YSZ) implanted by 167 MeV Xe ions. Positron lifetime data were interpreted with aid of ab-initio theoretical modelling of defects in YSZ lattice. Damage caused by Xe implantation was investigated in two YSZ samples with different microstructure: (i) single crystal and (ii) sintered ceramic. The virgin YSZ single crystal exhibits single component spectrum with lifetime of ≈ 180 ps. Similar lifetime component was found also in the virgin sample of sintered YSZ ceramic. Since this lifetime is significantly higher than the YSZ bulk lifetime the virgin YSZ crystal and the sintered ceramic both contain vacancy-like defects. Xe implantation leads to appearance of additional defect component with longer lifetime ≈ 370 ps which comes obviously from vacancy clusters fonned by agglomeration of irradiation induced vacancies. A broad absorption band with peak absorption at ≈ 518 nm was found in Xe-implanted crystal by optical measurements.

  18. Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

    NASA Astrophysics Data System (ADS)

    Li, W.; Pei, D.; Guo, X.; Cheng, M. K.; Lee, S.; Lin, Q.; King, S. W.; Shohet, J. L.

    2016-05-01

    The effects of cesium (Cs) ion-implantation on uncured plasma-enhanced chemical-vapor-deposited organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated and compared with an ultraviolet (UV) cured film. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 30% with Cs implantation, and further up to 52% after annealing at 400 °C in a N2 ambient for 1 h. These improvements are either comparable to or better than the effects of UV-curing. They are attributed to an enhancement of the Si-O-Si network structure. The k-value of the SiCOH films increased slightly after Cs implantation, and increased further after annealing. These increases are attributed to two carbon-loss mechanisms, i.e., the carbon loss due to Si-CH3 bond breakage from implanted Cs ions, and the carbon loss due to oxidation during the annealing. The time-zero dielectric breakdown strength was improved after the Cs implantation and the annealing, and was better than the UV-cured sample. These results indicate that Cs ion implantation could be a supplement to or a substitution for the currently used UV curing method for processing SiCOH low-k films.

  19. Ion-implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    Chernow, F.

    1975-01-01

    The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

  20. Formation of vanadium silicide by high dose ion implantation

    NASA Astrophysics Data System (ADS)

    Salvi, V. P.; Narsale, A. M.; Vidwans, S. V.; Rangwala, A. A.; Guzman, L.; Dapor, M.; Giunta, G.; Calliari, L.; Marchetti, F.

    1987-10-01

    The vanadium silicide system has been found to be of increasing interest because one of the silicide phases viz. V 3Si with the A-15 structure is often accompanied by a high temperature superconductivity. We have studied the formation of vanadium silicide layers by high dose ion implantation. 30 keV 51V + ions were implanted at room temperature onto thermally evaporated a-Si films on thermally grown SiO 2 substrates. The samples were annealed in vacuum to study the possible evolution of V-Si phases. Both Seeman-Bohlin X-ray diffraction and Auger/sputter profiling techniques were used to analyse these samples. The observed Auger depth profile of the annealed samples shows a more uniform vanadium distribution as compared to the vanadium distribution in as-implanted samples, along with the changes in the Si L 2,3VV lineshape. The X-ray diffraction results show the formation of V 3Si, V 5Si 3 and VSi 2 phases. After annealing the sample in vacuum, a more ordered growth of V 3Si phase is found to be accompanied by an increase in VSi 2 phase. This has been related to the possible changes ocurring in the a-Si layers due to annealing of the sample.

  1. High- Tc superconductor characteristics control by ion implantation

    NASA Astrophysics Data System (ADS)

    Matsui, S.; Matsutera, H.; Yoshitake, T.; Fujita, J.; Satoh, T.

    1989-03-01

    Transition temperature ( Tc) control and annealing effects of YBa 2Cu 3O x and Bi 2Sr 1.4 Ca 1.8Cu 2.2O y superconductor thin films implanted by 200 keV Ne + have been investigated. YBa 2Cu 3 O xTc end points for 0, 1 × 10 14, 1 × 10 15 and 1 × 10 16 ions/cm 2 doses are 75, 71, 62 and 16 K, respectively. On the other hand, Bi 2Sr 1.4Ca 1.8Cu 2.2O y, Tc end points for 0, 1 × 10 12 and 1 × 10 13 ions/cm 2 doses are 78, 76 and 54 K, respectively, c lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for films, are recovered by anneaing in O 2 atomosphere. Moreover, microcrystal growth caused by annealing the implanted YBa 2Cu 3O x film was observed on the surface.

  2. Damping of Plasma Waves in Multi-species Ion Plasmas

    NASA Astrophysics Data System (ADS)

    Anderegg, Francois; Affolter, Matthew; Driscoll, C. Fred

    2015-11-01

    The damping of Langmuir waves in multi-species pure ion plasmas is measured over four decades in temperature covering regimes of Landau, bounce harmonics, and interspecies drag damping. Thermal cyclotron spectroscopy determines the plasma composition. The plasma is predominantly Mg+ resulting from a Mg electrode arc, with roughly 5-30% other ions, typically H3O+ and O2+,arising from ionization and chemical reactions with the residual background gas. The plasma temperature is controlled with laser cooling of the Mg24 ions over the range 10-4 <= T <= 1 eV. For T >= 0 .1 eV, the damping rates agree closely with Landau theory for θ-symmetric standing waves, with discrete wavenumber k1 = π /Lp . At lower temperature 10-2 <= T <= 0 . 1 eV the damping is not fully understood, but is most likely a result of Landau damping on higher kz bounce harmonics produced by the rounded plasma ends. For T <=10-2 eV, damping rates 10 <= γ <=103 s-1 are proportional to the ion-ion collisionality νii ~T - 3 / 2 , consistent with a theory prediction that includes interspecies drag. A decrease in γ is observed at T <=10-3 eV, presumably due to strong magnetization, centrifugal separation of the species, and the collisionality approaching the mode frequencyf1 ~20 kHz. Supported by DOE grant DE-SC0002451.

  3. Integration of Ion Implantation with Scanning ProbeAlignment

    SciTech Connect

    Persaud, A.; Rangelow, I.W.; Schenkel, T.

    2005-03-01

    We describe a scanning probe instrument which integrates ion beams with imaging and alignment functions of a piezo resistive scanning probe in high vacuum. Energetic ions (1 to a few hundred keV) are transported through holes in scanning probe tips [1]. Holes and imaging tips are formed by Focused Ion Beam (FIB) drilling and ion beam assisted thin film deposition. Transport of single ions can be monitored through detection of secondary electrons from highly charged dopant ions (e. g., Bi{sup 45+}) enabling single atom device formation. Fig. 1 shows SEM images of a scanning probe tip formed by ion beam assisted Pt deposition in a dual beam FIB. Ion beam collimating apertures are drilled through the silicon cantilever with a thickness of 5 {micro}m. Aspect ratio limitations preclude the direct drilling of holes with diameters well below 1 {micro}m, and smaller hole diameters are achieved through local thin film deposition [2]. The hole in Fig. 1 was reduced from 2 {micro}m to a residual opening of about 300 nm. Fig. 2 shows an in situ scanning probe image of an alignment dot pattern taken with the tip from Fig. 1. Transport of energetic ions through the aperture in the scanning probe tip allows formation of arbitrary implant patterns. In the example shown in Fig. 2 (right), a 30 nm thick PMMA resist layer on silicon was exposed to 7 keV Ar{sup 2+} ions with an equivalent dose of 10{sup 14} ions/cm{sup 2} to form the LBL logo. An exciting goal of this approach is the placement of single dopant ions into precise locations for integration of single atom devices, such as donor spin based quantum computers [3, 4]. In Fig. 3, we show a section of a micron size dot area exposed to a low dose (10{sup 11}/cm{sup 2}) of high charge state dopant ions. The Bi{sup 45+} ions (200 keV) were extracted from a low emittance highly charged ions source [5]. The potential energy of B{sup 45+}, i. e., the sum of the binding energies required to remove the electrons, amounts to 36 ke

  4. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  5. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    PubMed

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  6. Biodegradable poly(butylene succinate) modified by gas plasmas and their in vitro functions as bone implants.

    PubMed

    Wang, Huaiyu; Xu, Ming; Wu, Zhengwei; Zhang, Wei; Ji, Junhui; Chu, Paul K

    2012-08-01

    Artificial implants are alternatives to autologous grafts in repairing severe bone damage and in many clinical applications, the artificial implant materials should be biodegradable in order to avoid chronic problems associated with biostable implants. In this study, a biodegradable biopolymer, poly(butylene succinate) (PBSu), is treated by N(2), NH(3) and H(2)O plasmas and investigated as bone replacement materials in vitro to obtain a better understanding of the behavior of osteoblasts on the different plasma-treated materials. N(2), NH(3), and H(2)O plasma immersion ion implantation (PIII) produces dominant C-N, C═N, and C-O surface functional groups, respectively rendering the materials with hydrophilic characteristics which favor osteoblast adhesion and early proliferation. In particular, N-containing groups, especially C═N, are more positive to osteogenic differentiation of the seeded osteoblasts than C-O. Among the 3 plasma treatments, NH(3) PIII is the most effective, yielding surface properties that are suitable for artificial bone implants. PMID:22799540

  7. Dissipative solitons in pair-ion plasmas

    SciTech Connect

    Ghosh, Samiran; Adak, Ashish Khan, Manoranjan

    2014-01-15

    The effects of ion-neutral collisions on the dynamics of the nonlinear ion acoustic wave in pair-ion plasma are investigated. The standard perturbative approach leads to a Korteweg-de Vries equation with a linear damping term for the dynamics of the finite amplitude wave. The ion-neutral collision induced dissipation is responsible for the linear damping. The analytical solution and numerical simulation reveal that the nonlinear wave propagates in the form of a weakly dissipative compressive solitons. Furthermore, the width of the soliton is proportional to the amplitude of the wave for fixed soliton velocity. Results are discussed in the context of the fullerene pair-ion plasma experiment.

  8. Stoichiometric disturbances in compound semiconductors due to ion implantation

    NASA Technical Reports Server (NTRS)

    Avila, R. E.; Fung, C. D.

    1986-01-01

    A method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.

  9. Ion implantation induced modification of structural and magnetic properties of perpendicular media

    NASA Astrophysics Data System (ADS)

    Gaur, Nikita; Piramanayagam, S. N.; Maurer, S. L.; Nunes, R. W.; Steen, S.; Yang, H.; Bhatia, C. S.

    2011-09-01

    This study reports the effects of implanting various doses of boron (11B+) and argon (40Ar+) ions into the recording layer and the soft underlayer of CoCrPt-SiO2-based perpendicular recording media. Implantation of a lower dose of boron ions (1011 ions cm-2) in the recording layer was found to reduce the out-of-plane coercivity, whereas no changes in the coercivity were observed when they were implanted into the soft underlayer. In the case of argon ions, lower dose implantation did not show any changes in the coercivity, irrespective of the implanted layer. However, higher dose implantations (1016 ions cm-2) of all the species were found to cause a reduction in coercivity, irrespective of the implanted layer. The reduction in coercivity was more significant when the ions were implanted in the recording layer compared with the case of implantation in the soft underlayer. X-ray diffraction (XRD) results on samples where argon was implanted in the recording layer showed a strong shift in the position of Co (0 0 .2) peaks, indicating an increase in the 'c' parameter. The shift is explained, on the basis of x-ray photoelectron spectroscopy, to be arising from intra-layer mixing at the CoCrPt-SiO2/Ru interface. Magnetic force microscopy images indicated an increase in domain size arising from the ion implantation.

  10. Electrostatic ion waves in non-Maxwellian pair-ion plasmas

    SciTech Connect

    Arshad, Kashif; Mahmood, S.

    2010-12-15

    The electrostatic ion waves are studied for non-Maxwellian or Lorentzian distributed unmagnetized pair-ion plasmas. The Vlasov equation is solved and damping rates are calculated for electrostatic waves in Lorentzian pair-ion plasmas. The damping rates of the electrostatic ion waves are studied for the equal and different ion temperatures of pair-ion species. It is found that the Landau damping rate of the ion plasma wave is increased in Lorentzian plasmas in comparison with Maxwellian pair-ion plasmas. The numerical results are also presented for illustration by taking into account the parameters reported in fullerene pair-ion plasma experiments.

  11. GaAs transistors formed by Be or Mg ion implantation

    NASA Technical Reports Server (NTRS)

    Hunsperger, R. G.; Marsh, O. J.

    1974-01-01

    N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

  12. Antibacterial PVD coatings doped with silver by ion implantation

    NASA Astrophysics Data System (ADS)

    Osés, J.; Palacio, J. F.; Kulkarni, S.; Medrano, A.; García, J. A.; Rodríguez, R.

    2014-08-01

    The antibacterial effect of certain metal ions, like silver, has been exploited since antiquity. Obviously, the ways to employ the biocide activity of this element have evolved throughout time and it is currently used in a wide range of clinical applications. The work presented here reports the results of an investigation focused on combining the protective properties of PVD coatings with the biocide property of silver, applied by ion implantation. For this purpose, chromium nitride layers were doped with silver implanted at two different doses (5 × 1016 and 1 × 1017 ion/cm2) at 100 keV of energy and perpendicular incidence. Full characterization of the coatings was performed to determine its topographical and mechanical properties. The concentration profile of Ag was analyzed by GD-OES. The thickness of the layers, nano-hardness, roughness, wear resistance and coefficient of friction were measured. Finally, the anti-bacterial efficacy of the coatings was determined following the JIS Z-2801:2010 Standard. The results provide clear insights into the efficacy of silver for antibacterial purposes, as well as on its influence in the mechanical and tribological behaviour of the coatings matrix.

  13. Observations of strong ion-ion correlations in dense plasmas

    SciTech Connect

    Ma, T. Pak, A.; Landen, O. L.; Le Pape, S.; Turnbull, D.; Döppner, T.; Fletcher, L.; Galtier, E.; Hastings, J.; Lee, H. J.; Nagler, B.; Glenzer, S. H.; Chapman, D. A.; Falcone, R. W.; Fortmann, C.; Gericke, D. O.; Gregori, G.; White, T. G.; Neumayer, P.; Vorberger, J.; and others

    2014-05-15

    Using simultaneous spectrally, angularly, and temporally resolved x-ray scattering, we measure the pronounced ion-ion correlation peak in a strongly coupled plasma. Laser-driven shock-compressed aluminum at ∼3× solid density is probed with high-energy photons at 17.9 keV created by molybdenum He-α emission in a laser-driven plasma source. The measured elastic scattering feature shows a well-pronounced correlation peak at a wave vector of k=4Å{sup −1}. The magnitude of this correlation peak cannot be described by standard plasma theories employing a linear screened Coulomb potential. Advanced models, including a strong short-range repulsion due to the inner structure of the aluminum ions are however in good agreement with the scattering data. These studies have demonstrated a new highly accurate diagnostic technique to directly measure the state of compression and the ion-ion correlations. We have since applied this new method in single-shot wave-number resolved S(k) measurements to characterize the physical properties of dense plasmas.

  14. Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

    SciTech Connect

    Satoh, Shu; Yoon, Jongyoon; David, Jonathan

    2011-01-07

    Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.

  15. Dose Control System in the Optima XE Single Wafer High Energy Ion Implanter

    NASA Astrophysics Data System (ADS)

    Satoh, Shu; Yoon, Jongyoon; David, Jonathan

    2011-01-01

    Photoresist outgassing can significantly compromise accurate dosimetry of high energy implants. High energy implant even at a modest beam current produces high beam powers which create significantly worse outgassing than low and medium energy implants and the outgassing continues throughout the implant due to the low dose in typical high energy implant recipes. In the previous generation of high energy implanters, dose correction by monitoring of process chamber pressure during photoresist outgassing has been used. However, as applications diversify and requirements change, the need arises for a more versatile photoresist correction system to match the versatility of a single wafer high energy ion implanter. We have successfully developed a new dosimetry system for the Optima XE single wafer high energy ion implanter which does not require any form of compensation due to the implant conditions. This paper describes the principles and performance of this new dose system.

  16. Turning an organic semiconductor into a low-resistance material by ion implantation

    NASA Astrophysics Data System (ADS)

    Fraboni, Beatrice; Scidà, Alessandra; Cosseddu, Piero; Wang, Yongqiang; Nastasi, Michael; Milita, Silvia; Bonfiglio, Annalisa

    2015-12-01

    We report on the effects of low energy ion implantation on thin films of pentacene, carried out to investigate the efficacy of this process in the fabrication of organic electronic devices. Two different ions, Ne and N, have been implanted and compared, to assess the effects of different reactivity within the hydrocarbon matrix. Strong modification of the electrical conductivity, stable in time, is observed following ion implantation. This effect is significantly larger for N implants (up to six orders of magnitude), which are shown to introduce stable charged species within the hydrocarbon matrix, not only damage as is the case for Ne implants. Fully operational pentacene thin film transistors have also been implanted and we show how a controlled N ion implantation process can induce stable modifications in the threshold voltage, without affecting the device performance.

  17. Model for ion-implantation-induced improvements of photoferroelectric imaging in lead lanthanum zirconate titanate ceramics

    SciTech Connect

    Peercy, P.S.; Land, C.E.

    1980-11-01

    Studies of photoferroelectric image storage in H-, He-, and, more recently, Ar-implanted /(PLZT) lead lanthanum zirconate titanate reveal that the photosensitivity can be significantly increased by ion implantation into the image storage surface. For example, the photosensitivity after implantation with 5 x 10/sup 14/ 500-keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The increase in photosensitivity results from a decrease in dark conductivity and changes in the photoconductivity of the implanted layer. We present a phenomenological model which describes the photosensitivity enhancement obtained by ion implantation. This model takes into account both light- and ion- implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with near-UV light intensity for ion-implantated PLZT.

  18. Structure analysis of bimetallic Co-Au nanoparticles formed by sequential ion implantation

    NASA Astrophysics Data System (ADS)

    Chen, Hua-jian; Wang, Yu-hua; Zhang, Xiao-jian; Song, Shu-peng; chen, Hong; Zhang, Ke; Xiong, Zu-zhao; Ji, Ling-ling; Dai, Hou-mei; Wang, Deng-jing; Lu, Jian-duo; Wang, Ru-wu; Zheng, Li-rong

    2016-08-01

    Co-Au alloy Metallic nanoparticles (MNPs) are formed by sequential ion implantation of Co and Au into silica glass at room temperature. The ion ranges of Au ions implantation process have been displayed to show the ion distribution. We have used the atomic force microscopy (AFM) and transmission electron microscopy (TEM) to investigate the formation of bimetallic nanoparticles. The extended X-ray absorption fine structure (EXAFS) has been used to study the local structural information of bimetallic nanoparticles. With the increase of Au ion implantation, the local environments of Co ions are changed enormously. Hence, three oscillations, respectively, Co-O, Co-Co and Co-Au coordination are determined.

  19. Productivity Improvement for the SHX--SEN's Single-Wafer High-Current Ion Implanter

    SciTech Connect

    Ninomiya, Shiro; Ochi, Akihiro; Kimura, Yasuhiko; Yumiyama, Toshio; Kudo, Tetsuya; Kurose, Takeshi; Kariya, Hiroyuki; Tsukihara, Mitsukuni; Ishikawa, Koji; Ueno, Kazuyoshi

    2011-01-07

    Equipment productivity is a critical issue for device fabrication. For ion implantation, productivity is determined both by ion current at the wafer and by utilization efficiency of the ion beam. Such improvements not only result in higher fabrication efficiency but also reduce consumption of both electrical power and process gases. For high-current ion implanters, reduction of implant area is a key factor to increase efficiency. SEN has developed the SAVING system (Scanning Area Variation Implantation with Narrower Geometrical pattern) to address this opportunity. In this paper, three variations of the SAVING system are introduced along with discussion of their effects on fab productivity.

  20. The ion implantation-induced properties of one-dimensional nanomaterials

    PubMed Central

    2013-01-01

    Nowadays, ion implantation is an extensively used technique for material modification. Using this method, we can tailor the properties of target materials, including morphological, mechanical, electronic, and optical properties. All of these modifications impel nanomaterials to be a more useful application to fabricate more high-performance nanomaterial-based devices. Ion implantation is an accurate and controlled doping method for one-dimensional nanomaterials. In this article, we review recent research on ion implantation-induced effects in one-dimensional nanostructure, such as nanowires, nanotubes, and nanobelts. In addition, the optical property of single cadmium sulfide nanobelt implanted by N+ ions has been researched. PMID:23594476

  1. The ion implantation-induced properties of one-dimensional nanomaterials

    NASA Astrophysics Data System (ADS)

    Li, Wen Qing; Xiao, Xiang Heng; Stepanov, Andrey L.; Dai, Zhi Gao; Wu, Wei; Cai, Guang Xu; Ren, Feng; Jiang, Chang Zhong

    2013-04-01

    Nowadays, ion implantation is an extensively used technique for material modification. Using this method, we can tailor the properties of target materials, including morphological, mechanical, electronic, and optical properties. All of these modifications impel nanomaterials to be a more useful application to fabricate more high-performance nanomaterial-based devices. Ion implantation is an accurate and controlled doping method for one-dimensional nanomaterials. In this article, we review recent research on ion implantation-induced effects in one-dimensional nanostructure, such as nanowires, nanotubes, and nanobelts. In addition, the optical property of single cadmium sulfide nanobelt implanted by N+ ions has been researched.

  2. The effect of platform switching on the levels of metal ion release from different implant-abutment couples.

    PubMed

    Alrabeah, Ghada O; Knowles, Jonathan C; Petridis, Haralampos

    2016-01-01

    The improved peri-implant bone response demonstrated by platform switching may be the result of reduced amounts of metal ions released to the surrounding tissues. The aim of this study was to compare the levels of metal ions released from platform-matched and platform-switched implant-abutment couples as a result of accelerated corrosion. Thirty-six titanium alloy (Ti-6Al-4V) and cobalt-chrome alloy abutments were coupled with titanium cylinders forming either platform-switched or platform-matched groups (n=6). In addition, 18 unconnected samples served as controls. The specimens were subjected to accelerated corrosion by static immersion in 1% lactic acid for 1 week. The amount of metal ions ion of each test tube was measured using inductively coupled plasma mass spectrometry. Scanning electron microscope (SEM) images and energy dispersive spectroscopy X-ray analyses were performed pre- and post-immersion to assess corrosion at the interface. The platform-matched groups demonstrated higher ion release for vanadium, aluminium, cobalt, chrome, and molybdenum compared with the platform-switched groups (P<0.05). Titanium was the highest element to be released regardless of abutment size or connection (P<0.05). SEM images showed pitting corrosion prominent on the outer borders of the implant and abutment platform surfaces. In conclusion, implant-abutment couples underwent an active corrosion process resulting in metal ions release into the surrounding environment. The highest amount of metal ions released was recorded for the platform-matched groups, suggesting that platform-switching concept has a positive effect in reducing the levels of metal ion release from the implant-abutment couples. PMID:27357323

  3. Pulsed-electron-beam annealing of ion-implantation damage

    NASA Technical Reports Server (NTRS)

    Greenwald, A. C.; Kirkpatrick, A. R.; Little, R. G.; Minnucci, J. A.

    1979-01-01

    Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

  4. Ion Beam Plasma Interactions in the ASTRAL Helicon Plasma Source.

    NASA Astrophysics Data System (ADS)

    Boivin, R. F.; Kesterson, A.; Kamar, O.; Lin, Y.; Munoz, J.; Wang, X.

    2008-11-01

    A 100 KeV NEC duoplasmatron is used to produce an energetic ion beam (10 KeV < E < 100 KeV). The beam is sent through plasmas produced by the ASTRAL helicon plasma source. The beam current and beam size are measured by a device combining Retarding Field Analyzer (RFA) and Faraday Cup (FC) features. ASTRAL produces bright intense He/Ne/Ar plasmas with the following parameters: ne = 1E11 -- 1E13 cm-3 and Te = 2 - 10 eV, B-field < 1.3 kGauss, rf power <= 2 kWatt. RF compensated Langmuir probes are used to measure Te and ne. Depending on the ion beam energy and the ratio of beam density over plasma density different wave instabilities will be generated within the plasmas. A real-time spectrum analyzer will be used to identify the wave instabilities and their evolution in the plasma. We will present early experimental results together with some preliminary theoretical simulation using 2D and 3D hybrid simulation codes. In these codes, ions are treated as fully kinetic particles while electrons are treated as a fluid. Both species are moving in a self-consistent electromagnetic field.

  5. Development of a process to achieve residue-free photoresist removal after high-dose ion implantation

    NASA Astrophysics Data System (ADS)

    McOmber, Janice I.; Nair, Rajesh S.

    1991-04-01

    Photoresist subjected to high-dose ion implantation tends to bubble and explode during the plasma photoresist stripping process in single-wafer ashers. A process has been developed to achieve the goals of complete photoresist removal with no bubbling or residues, minimum particulates, and minimal-CV shifts. These goals are accomplished by suitable photoresist pretreatment and optimization of resist strip parameters. Deep UV bake prior to implantation along with reduced platen temperature topside-lamp-assisted ashing have resulted in a residue-free ash with a low-CV shift.

  6. Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1994-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine

  7. Metal ion implantation in inert polymers for strain gauge applications

    NASA Astrophysics Data System (ADS)

    Di Girolamo, Giovanni; Massaro, Marcello; Piscopiello, Emanuela; Tapfer, Leander

    2010-10-01

    Metal ion implantation in inert polymers may produce ultra-thin conducting films below the polymer surface. These subsurface films are promising structures for strain gauge applications. To this purpose, polycarbonate substrates were irradiated at room temperature with low-energy metal ions (Cu + and Ni +) and with fluences in the range between 1 × 10 16 and 1 × 10 17 ions/cm 2, in order to promote the precipitation of dispersed metal nanoparticles or the formation of a continuous thin film. The nanoparticle morphology and the microstructural properties of polymer nanocomposites were investigated by glancing-incidence X-ray diffraction and transmission electron microscopy (TEM) measurements. At lower fluences (<5 × 10 16 ions/cm 2) a spontaneous precipitation of spherical-shaped metal nanoparticles occurred below the polymer top-surface (˜50 nm), whereas at higher fluences the aggregation of metal nanoparticles produced the formation of a continuous polycrystalline nanofilm. Furthermore, a characteristic surface plasmon resonance peak was observed for nanocomposites produced at lower ion fluences, due to the presence of Cu nanoparticles. A reduced electrical resistance of the near-surface metal-polymer nanocomposite was measured. The variation of electrical conductivity as a function of the applied surface load was measured: we found a linear relationship and a very small hysteresis.

  8. Ion implantation of silicon at the nanometer scale

    SciTech Connect

    Bianconi, Marco; Bergamini, Fabio; Cristiani, Stefano; Lulli, Giorgio

    2007-10-01

    SiO{sub 2} layers ({approx}0.5 {mu}m thick) thermally grown on (100) Si were irradiated with 12.5 MeV Ti ions at 10{sup 9} cm{sup -2} fluence, and subsequently exposed to the HF vapor, in order to selectively etch the latent tracks generated by the passage of swift ions. Nearly cylindrical nanoholes having diameters as small as 25 nm, with an average value of 54{+-}5 nm, were generated by this procedure. The nanopatterned SiO{sub 2} layer served as a mask for selective amorphization of the underlying Si, achieved by implantation with 180 keV Ar{sup +} ions at a fluence of 2.0x10{sup 15} cm{sup -2}. Dip in aqueous HF solution was then performed to selectively etch ion amorphized Si, thus transferring the nanometric pattern of the SiO{sub 2} mask to the underlying substrate. As expected, the maximum depth of amorphizazion in Si, and consequently of etching depth, decreases when the hole radius decreases below values of the order of the lateral ion straggling. The effect has been characterized and investigated by the comparison of experiments and three dimensional Monte Carlo simulations.

  9. High Frequency Plasma Generators for Ion Thrusters

    NASA Technical Reports Server (NTRS)

    Divergilio, W. F.; Goede, H.; Fosnight, V. V.

    1981-01-01

    The results of a one year program to experimentally adapt two new types of high frequency plasma generators to Argon ion thrusters and to analytically study a third high frequency source concept are presented. Conventional 30 cm two grid ion extraction was utilized or proposed for all three sources. The two plasma generating methods selected for experimental study were a radio frequency induction (RFI) source, operating at about 1 MHz, and an electron cyclotron heated (ECH) plasma source operating at about 5 GHz. Both sources utilize multi-linecusp permanent magnet configurations for plasma confinement. The plasma characteristics, plasma loading of the rf antenna, and the rf frequency dependence of source efficiency and antenna circuit efficiency are described for the RFI Multi-cusp source. In a series of tests of this source at Lewis Research Center, minimum discharge losses of 220+/-10 eV/ion were obtained with propellant utilization of .45 at a beam current of 3 amperes. Possible improvement modifications are discussed.

  10. Modifications in surface, structural and mechanical properties of brass using laser induced Ni plasma as an ion source

    NASA Astrophysics Data System (ADS)

    Ahmad, Shahbaz; Bashir, Shazia; Rafique, M. Shahid; Yousaf, Daniel

    2016-03-01

    Laser induced Ni plasma has been employed as source of ion implantation for surface, structural and mechanical properties of brass. Excimer laser (248 nm, 20 ns, 120mJ and 30 Hz) was used for the generation of Ni plasma. Thomson parabola technique was employed to estimate the energy of generated ions using CR39 as a detector. In response to stepwise increase in number of laser pulses from 3000 to 12000, the ion dose varies from 60 × 1013 to 84 × 1016 ions/cm2 with constant energy of 138 KeV. SEM analysis reveals the growth of nano/micro sized cavities, pores, pits, voids and cracks for the ion dose ranging from 60 × 1013 to 70 × 1015 ions/cm2. However, at maximum ion dose of 84 × 1016 ions/cm2 the granular morphology is observed. XRD analysis reveals that new phase of CuZnNi (200) is formed in the brass substrate after ion implantation. However, an anomalous trend in peak intensity, crystallite size, dislocation line density and induced stresses is observed in response to the implantation with various doses. The increase in ion dose causes to decrease the Yield Stress (YS), Ultimate Tensile Strength (UTS) and hardness. However, for the maximum ion dose the highest values of these mechanical properties are achieved. The variations in the mechanical properties are correlated with surface and crystallographical changes of ion implanted brass.

  11. Ion-implanted GaN junction field effect transistor

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Wilson, R.G.; Pearton, S.J.; Stall, R.A.

    1996-04-01

    Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). {ital p}-type and {ital n}-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150{degree}C rapid thermal anneal. A refractory W gate contact was employed that allows the {ital p}-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a {approximately}1.7 {mu}m{times}50 {mu}m JFET with a {minus}6 V threshold voltage, a maximum transconductance of 7 mS/mm at {ital V}{sub GS}={minus} 2V and saturation current of 33 mA/mm at {ital V}{sub GS}=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized {ital n}{sup +} implants in the source and drain regions. {copyright} {ital 1996 American Institute of Physics.}

  12. Ion-implanted high microwave power indium phosphide transistors

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Messick, Louis J.; Nguyen, Richard

    1989-01-01

    Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

  13. Ion beam technology applications study. [ion impact, implantation, and surface finishing

    NASA Technical Reports Server (NTRS)

    Sellen, J. M., Jr.; Zafran, S.; Komatsu, G. K.

    1978-01-01

    Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

  14. Optical waveguides fabricated by nitrogen ion implantation in fused silica

    NASA Astrophysics Data System (ADS)

    Liu, Chun-Xiao; Fu, Li-Li; Zheng, Rui-Lin; Guo, Hai-Tao; Zhou, Zhi-Guang; Li, Wei-Nan; Lin, She-Bao; Wei, Wei

    2016-02-01

    We report on the fabrication of waveguides in fused silica using 4.5-MeV nitrogen ion implantation with a fluence of 5.0×1014 ions/cm2. The prism-coupling method was employed to measure the effective refractive indices of guiding modes at the wavelengths of 632.8 and 1539 nm. The effective refractive indices of the first few modes were higher than that of the substrate. The refractive index profiles at 632.8 and 1539 nm were reconstructed by the reflectivity calculation method. Positive index changes were induced in the waveguide layers. The end-face coupling method was used to measure the near-field light intensity distributions at the wavelength of 632.8 nm and the finite-difference beam propagation method was applied to simulate the guided mode profile at the wavelength of 1539 nm. The waveguide structures emerge as candidates for integrated photonic devices.

  15. Optically active surfaces formed by ion implantation and thermal treatment

    SciTech Connect

    Gea, L.A.; Boatner, L.A.; Evans, H.M.; Zuhr, R.

    1996-08-01

    Embedded VO{sub 2} precipitates have been formed in single-crystal sapphire by the ion co-implantation of vanadium and oxygen and subsequent thermal annealing. The embedded VO{sub 2} particles have been shown to exhibit an optical switching behavior that is comparable to that of continuous thin films. In this work, the mechanisms of formation of these optically active particles are investigated. It is shown that precipitation of the vanadium dioxide phase is favored when the thermal treatment is performed on an ion-damaged but still crystalline (rather than amorphized) Al{sub 2}O{sub 3} substrate. The best optical switching behavior is observed in this case, and this behavior is apparently correlated with a more-favorable dispersion of VO{sub 2} small particles inside the matrix.

  16. Probe measurements in ion-beam plasma

    SciTech Connect

    Dudin, S.V.

    1994-12-31

    The particularities of the electric probe measurements in the ion-beam plasma (IBP) have been investigated. To find the electron density n{sub e} and temperature T{sub c} as well as electron energy distribution it is necessary to separate electron current from full probe current, because ion part of this current is often large enough to mask the electron part. According to collisionless probe theory, radius of ion layer in strongly non-isothermal plasma (as in their case) and consequently the ion current are determined by Child`s law. However, at presence of ion beam with high enough energy {var_epsilon}{sub b} >> e{var_phi}{sub p}, this law is broken. The author has found the dependence of Langmuir probe ion current I{sub i} on probe potential {var_phi}{sub p} at presence of IB. The constant ion density approach was used in cylindrical and spherical geometry of the probe layer. Dependence of ion current founded experimentally accords with Child`s law when the probe is placed outside the beam and linear--within the beam. Application of only the chemical Langmuir probe is insufficient for energoanalysis of IBP electrons because of ion current interference. To solve this problem combination of the techniques of cylindrical probe, large plate probe (5 x 5mm) and two-grid energoanalyzer was used. Design and parameters of the two-grid analyzer are presented. Measuring system is described for determination of electron energy distribution function in low temperature plasma by double differentiation of the electric probe volt-ampere characteristic by modulation method.

  17. Superconducting Properties of Ion-Implanted Gold - Thin Films.

    NASA Astrophysics Data System (ADS)

    Jisrawi, Najeh Mohamed

    The superconducting properties of thin Au _{x}rm Si_{1-x} films prepared by ion beam implantation and ion beam mixing are studied. The films are prepared by evaporation of single Au layers on Si substrates and mixing them with Si, Ar, or Xe, or by Xe beam mixing of alternate multilayers of Au and Si sputtered on rm Al_2 O_3 substrates. The superconducting transition temperature and upper critical fields are determined by measuring the temperature and magnetic field dependence of resistivity. Temperatures as low as 20mK and magnetic fields as high as 8 T were used. Superconductivity in these films is discussed in connection with metastable metallic phases that are reportedly produced in the Au -Si system by high quenching rate preparation techniques like quenching from the vapor or the melt or ion implantation. Preliminary structural studies provide evidence for the existence of these phases and near-edge X-ray absorption and X-ray photoelectron spectroscopy measurements indicate a metallic type of bonding from which compound formation is inferred. The quality of the films is strongly dependent on the conditions of implantation. The maximum superconducting transition temperature attained is about 1.2 K. The upper critical fields have a maximum of 6T. An unusual double transition in the field dependence of resistivity is observed at low temperatures. The effect is very pronounced at compositions near x = 0.5 where the maximum T_{c} occurs. A model is presented to explain this result which invokes the properties of the metastable metallic phases and assumes the formation of more than two such phases in the same sample as the implantation dose increases. The Si-Au interface plays an important role in understanding the model and in interpreting the results of this thesis in general. The origin of superconductivity in the Au -Si system is discussed by relating the experimental results to the various mechanisms suggested in the literature. The implications of the study of

  18. Study on Energetic Ions Behavior in Plasma Facing Materials at Lower Temperature

    NASA Astrophysics Data System (ADS)

    Morimoto, Y.; Sugiyama, T.; Akahori, S.; Kodama, H.; Tega, E.; Sasaki, M.; Oyaidu, M.; Kimura, H.; Okuno, K.

    An apparatus equipped with X-ray Photoelectron Spectroscopy (XPS) and Thermal Desorption Spectroscopy (TDS) was constructed to study interactions of energetic hydrogen isotopes with plasma facing materials. It is a remarkable feature of the apparatus that energetic ion implantation is carried out at around 150 K to study reactions of energetic ions with matrix by suppressing the reactions of thermalized ions. Using this apparatus, TDS experiments for pyrolytic graphite implanted with energetic D2+ ions at 173 and 373 K were carried out. The experimental results suggest that the deuterium implanted was released through a four-step release processes, involving three D2 and one CDx (x=2, 3 and 4) desorption processes. Two deuterium and CDx desorption processes were observed in the temperature range from 700 to 1200 K. In addition, a new deuterium desorption process was observed for the deuterium-implanted sample at 173 K. This has never been observed for deuterium-implanted graphite implanted at temperatures higher than room temperature (R.T.).

  19. Electrical measurements on ion-implanted LPCVD polycrystalline silicon films

    NASA Astrophysics Data System (ADS)

    Huang, Ruey-Shing; Cheng, Chin-Hsiung; Liu, J. C.; Lee, M. K.; Chen, C. T.

    1983-07-01

    The electrical conduction properties of ion implanted polycrystalline silicon films have been studied. The polysilicon films were deposited by pyrolysis of silane at 647°C in LPCVD system onto oxide-coated silicon wafers to a thickness of 0.6 μm. Dopants were itroducd by implanting with boron or phosphorus ions, accelerated to 145 keV; doses ranged from 1 × 10 12 cm -2 to 1 × 10 15 cm -2. Film resistivities spanning 8 orders of magnitude were obtained using this doping range. Current-voltage characteristics of polysilicon resistors were measured at temperatures ranging from 24 to 140°C. The associated barrier heights and activation energies were derived. The grain-boundary trapping states density was estimated to be 5 × 10 12 cm -2. We found that both dopant atom segregation and carrier trapping at the grain boundaries play important roles in polysilicon electrical conduction properties. However, within the dose range studies, the dopant atom segragation is most detrimental to the film conductivity for doses < 1 × 10 13 cm -2; as the dose is increased, carrier trapping effects become more pronounced for doses up to 5 × 10 14 cm -2. For doses ⩾ 5 × 10 14 cm -2, conduction due to carriers tunneling through the potential barriers at grain boundaries has to be considered.

  20. Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

    SciTech Connect

    Shcherbachev, K. D. Voronova, M. I.; Bublik, V. T.; Mordkovich, V. N. Pazhin, D. M.; Zinenko, V. I.; Agafonov, Yu. A.

    2013-12-15

    The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by high-resolution X-ray diffraction. The density depth distribution in the surface layer of native oxide has been measured by X-ray reflectometry. Room-temperature implantation conditions have ensured the equality of the suggested ranges of ions of different masses and the energies transferred by them to the target. It is convincingly shown that the change in the structural parameters of the radiation-damaged silicon layer and the native oxide layer depend on the chemical activity of the implanted ions.

  1. Ion heating in a plasma focus

    NASA Technical Reports Server (NTRS)

    Hohl, F.; Gary, S. P.

    1974-01-01

    Ion acceleration and heating in a plasma focus were investigated by the numerical integration of the three-dimensional equations of motion. The electric and magnetic fields given were derived from experimental data. The results obtained show that during the collapse phase of focus formation, ions are efficiently heated to temperatures of several keV. During the phase of rapid current reduction, ions are accelerated to large velocities in the axial direction. The results obtained with the model are in general agreement with experimental results.

  2. In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

    SciTech Connect

    Oya, Y.; Sato, M.; Uchimura, H.; Okuno, K.; Ashikawa, N.; Sagara, A.; Yoshida, N.; Hatano, Y.

    2015-03-15

    Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{sub 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)

  3. Peripheral nerve regeneration through a silicone chamber implanted with negative carbon ions: Possibility to clinical application

    NASA Astrophysics Data System (ADS)

    Ikeguchi, Ryosuke; Kakinoki, Ryosuke; Tsuji, Hiroshi; Yasuda, Tadashi; Matsuda, Shuichi

    2014-08-01

    We investigated whether a tube with its inner surface implanted with negative-charged carbon ions (C- ions) would enable axons to extend over a distance greater than 10 mm. The tube was found to support nerves regenerating across a 15-mm-long inter-stump gap. We also investigated whether a C- ion-implanted tube pretreated with basic fibroblast growth factor (bFGF) promotes peripheral nerve regeneration. The C- ion implanted tube accelerated nerve regeneration, and this effect was enhanced by bFGF. Silicone treated with C- ions showed increased hydrophilic properties and cellular affinity, and axon regeneration was promoted with this increased biocompatibility.

  4. Studies of iron exposed to heavy ion implantation using positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Horodek, P.; Dryzek, J.; Skuratov, V. A.

    2016-05-01

    Variable energy positron beam and positron lifetime spectroscopy were used to study pure iron exposed to irradiation with 167 MeV Xe26+ heavy ions with different doses of 1012, 1013, 5×1013, 1014 ions/cm2. The positron lifetime spectroscopy revealed the presence of large cluster of about 15-27 vacancies and dislocations. The dislocations are distributed at the depth of about 18 μm i.e. almost twice deeper than the ion implantation range from the surface exposed to the heavy ions implantation. Possible explanation is the long-range effect attributed to the ion implantation into materials.

  5. Ion Acoustic Waves in Ultracold Neutral Plasmas

    SciTech Connect

    Castro, J.; McQuillen, P.; Killian, T. C.

    2010-08-06

    We photoionize laser-cooled atoms with a laser beam possessing spatially periodic intensity modulations to create ultracold neutral plasmas with controlled density perturbations. Laser-induced fluorescence imaging reveals that the density perturbations oscillate in space and time, and the dispersion relation of the oscillations matches that of ion acoustic waves, which are long-wavelength, electrostatic, density waves.

  6. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    SciTech Connect

    Meisner, L. L. Meisner, S. N.; Matveeva, V. A.; Matveev, A. L.

    2015-11-17

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ∼3400 and ∼6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  7. Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

    NASA Astrophysics Data System (ADS)

    Meisner, L. L.; Matveeva, V. A.; Meisner, S. N.; Matveev, A. L.

    2015-11-01

    The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ˜3400 and ˜6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

  8. Ion beam control in laser plasma interaction

    NASA Astrophysics Data System (ADS)

    Kawata, S.; Izumiyama, T.; Sato, D.; Nagashima, T.; Takano, M.; Barada, D.; Gu, Y. J.; Ma, Y. Y.; Kong, Q.; Wang, P. X.; Wang, W. M.

    2016-03-01

    By a two-stage successive acceleration in laser ion acceleration, our 2.5-dimensional particle-in-cell simulations demonstrate a remarkable increase in ion energy by a few hundreds of MeV; the maximum proton energy reaches about 250MeV. The ions are accelerated by the inductive continuous post-acceleration in a laser plasma interaction together with the target normal sheath acceleration and the breakout afterburner mechanism. An intense short-pulse laser generates a strong current by high-energy electrons accelerated, when an intense short- pulse laser illuminates a plasma target. The strong electric current creates a strong magnetic field along the high-energy electron current in the plasma. During the increase phase in the magnetic field strength, the moving longitudinal inductive electric field is induced by the Faraday law, and accelerates the forward-moving ions continously. The multi-stage acceleration provides a unique controllability in the ion energy and its quality.

  9. Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

    NASA Astrophysics Data System (ADS)

    Kuhudzai, R. J.; van der Berg, N. G.; Malherbe, J. B.; Hlatshwayo, T. T.; Theron, C. C.; Buys, A. V.; Botha, A. J.; Wendler, E.; Wesch, W.

    2014-08-01

    The recrystallization and subsequent crystal growth during annealing of amorphous surface layers on 6H-SiC produced by ion implantation is investigated. Amorphous surface layers were produced by ion implantation of 360 keV ions of iodine, silver, xenon, cesium and strontium into single crystalline 6H-silicon carbide samples. The ion fluence for all the implantations were in the order of 1016 cm-2. Vacuum annealing of the damaged silicon carbide samples was then performed. The microstructure of SiC surfaces before and after annealing was investigated using a high resolution field emission scanning electron microscope (SEM). SEM analysis was complimented by Atomic Force Microscopy (AFM). SEM images acquired by an in-lens detector using an accelerating voltage of 2 kV show nano-crystallites developed for all implanted samples after annealing. Larger and more faceted crystallites along with elongated thin crystallites were observed for iodine and xenon implanted 6H-SiC. Crystallites formed on surfaces implanted with strontium and cesium were smaller and less faceted. Strontium, silver and cesium implanted samples also exhibited more cavities on the surface. AFM was used to evaluate the effect of annealing on the surface roughness. For all the amorphous surfaces which were essentially featureless, the root mean square (rms) roughness was approximately 1 nm. The roughness increased to approximately 17 nm for the iodine implanted sample after annealing with the surface roughness below this value for all the other samples. AFM also showed that the largest crystals grew to heights of about 17, 20, 45, 50 and 65 nm for Sr, Cs, Ag, Xe and I implanted samples after annealing at 1200 °C for 5 h respectively. SEM images and AFM analysis suggest that iodine is more effective in promoting crystal growth during the annealing of bombardment-induced amorphous SiC layers than the rest of the ions we implanted. In samples of silicon carbide co-implanted with iodine and silver, few

  10. Structural modifications of alumina implanted with zirconium, copper, and titanium ions

    NASA Astrophysics Data System (ADS)

    Bigarré, J.; Fayeulle, S.; Tréheux, D.; Moncoffre, N.

    1997-10-01

    Microstructural modifications (amorphization, lattice deformation, phase transformations) in alumina induced by implantation of zirconium, copper, or titanium ions and by postimplantation thermal annealings were studied using grazing incidence x-ray diffraction. It was shown that the amount of lattice deformation and the type of damage resulting in the lattice depend on the ion implanted. When zirconium was implanted, the alumina lattice was highly deformed. Amorphization was observed when a high ion dose was implanted. Copper implantation led to the formation of gamma alumina. With titanium ions, very high strain was created and delta alumina was formed. After postimplantation annealings, lattices returned to their equilibrium state through crystallization of alpha alumina and precipitation of oxides of the implanted species (ZrO2, CuO and CuAl2O4, and TiO2).

  11. Annealing of damage and stability of implanted ions in ZnO crystals

    SciTech Connect

    Sonder, E.; Zuhr, R.A.; Valiga, R.E.

    1988-08-01

    The annealing of Bi, Cr, and Mn, implanted in ZnO, has been studied by Rutherford backscattering, ion channeling, and secondary ion mass spectroscopy. Implantation of approx.10/sup 16/ ions/cm/sup 2/ of any of these elements produces large concentrations of Zn interstitials, but no completely amorphous region. The temperature at which these interstitials anneal is a function of the implant species. Other defects produced by the implantation, which give rise to dechanneling and a consequent increased scattering probability in the tails of backscattering spectra, anneal at significantly higher temperature. This annealing is also a function of the implant species. Motion of the implant ions themselves does not occur when the interstitials anneal; it takes place above 700 /sup 0/C for Bi and Mn, and above 1000 /sup 0/C for Cr.

  12. Magnesium aluminate planar waveguides fabricated by C-ion implantation with different energies and fluences

    NASA Astrophysics Data System (ADS)

    Song, Hong-Lian; Yu, Xiao-Fei; Zhang, Lian; Wang, Tie-Jun; Qiao, Mei; Zhang, Jing; Liu, Peng; Wang, Xue-Lin

    2015-11-01

    We report on MgAl2O4 planar waveguides produced using different energies and fluences of C-ion implantation at room temperature. Based on the prism coupling method and end-face coupling measurements, light could propagate in the C-ion-implanted samples. The Raman spectra results indicate that the MgAl2O4 crystal lattice was damaged during the multi-energy C implantation process, whereas the absorption spectra were hardly affected by the C-ion implantation in the visible and infrared bands.

  13. Plasma uniformity of microwave ion sources

    SciTech Connect

    Tokiguichi, K.; Sakudo, N.; Suzuki, K.; Kanomata, I.

    1980-09-01

    The ion saturation current uniformities of two different type plasma sources, a coaxial and a Lisitano coil type, are investigated using a moveable Langmuir probe. They both operate under off-resonance microwave discharge. H/sub 2/ or Ar is used as the discharge gas. The coaxial source provides better uniformities for ion saturation current, electron temperature, and electon density than the Lisitano coil, independent of the discharge gas species. The ion saturation current with the coaxial source is uniform within approx.15% inside a 40-mm-diam circle for a 0.17 Pa H/sub 2/ discharge. However, with the Lisitano coil, uniformity is limited to a 20-mm-diam circle. Furthermore, the Lisitano coil easily suffers from heat distortion because of difficulties in realizing a cooled system. It is also experimentally confirmed that the coaxial-type source is more appropriate for obtaining high density plasma under continuous operation.

  14. Phase-mixing of ion plasma modes in pair-ion plasmas

    SciTech Connect

    Pramanik, Sourav; Chakrabarti, Nikhil

    2015-05-15

    Nonlinear interaction between two electrostatic normal modes of a warm pair-ion plasma, viz., ion plasma mode (Langmuir mode) and ion acoustic mode has been analyzed by employing a perturbation technique. It is shown that a gradual loss of phase coherence in the excited Langmuir wave dynamics (phase-mixing) occurs in such a plasma, leading to wave-breaking at arbitrarily low wave amplitudes. Nonlinear results provide an approximate expression for the phase-mixing time which is found to increase with the increase of the ratio of acoustic frequency to Langmuir frequency. The results of our investigation are expected to be relevant to the laboratory produced paired fullerene-ion plasmas.

  15. Modification of anti-bacterial surface properties of textile polymers by vacuum arc ion source implantation

    NASA Astrophysics Data System (ADS)

    Nikolaev, A. G.; Yushkov, G. Yu.; Oks, E. M.; Oztarhan, A.; Akpek, A.; Hames-Kocabas, E.; Urkac, E. S.; Brown, I. G.

    2014-08-01

    Ion implantation provides an important technology for the modification of material surface properties. The vacuum arc ion source is a unique instrument for the generation of intense beams of metal ions as well as gaseous ions, including mixed metal-gas beams with controllable metal:gas ion ratio. Here we describe our exploratory work on the application of vacuum arc ion source-generated ion beams for ion implantation into polymer textile materials for modification of their biological cell compatibility surface properties. We have investigated two specific aspects of cell compatibility: (i) enhancement of the antibacterial characteristics (we chose to use Staphylococcus aureus bacteria) of ion implanted polymer textile fabric, and (ii) the "inverse" concern of enhancement of neural cell growth rate (we chose Rat B-35 neuroblastoma cells) on ion implanted polymer textile. The results of both investigations were positive, with implantation-generated antibacterial efficiency factor up to about 90%, fully comparable to alternative conventional (non-implantation) approaches and with some potentially important advantages over the conventional approach; and with enhancement of neural cell growth rate of up to a factor of 3.5 when grown on suitably implanted polymer textile material.

  16. Kinetic instability of ion acoustic mode in permeating plasmas

    SciTech Connect

    Vranjes, J.; Poedts, S.; Ehsan, Zahida

    2009-07-15

    In plasmas with electron drift (current) relative to static ions, the ion acoustic wave is subject to the kinetic instability which takes place if the directed electron speed exceeds the ion acoustic speed. The instability threshold becomes different in the case of one quasineutral electron-ion plasma propagating through another static quasineutral (target) plasma. The threshold velocity of the propagating plasma may be well below the ion acoustic speed of the static plasma. Such a currentless instability may frequently be expected in space and astrophysical plasmas.

  17. Effects of fluoride-ion-implanted titanium surface on the cytocompatibility in vitro and osseointegatation in vivo for dental implant applications.

    PubMed

    Wang, Xue-jin; Liu, Hui-ying; Ren, Xiang; Sun, Hui-yan; Zhu, Li-ying; Ying, Xiao-xia; Hu, Shu-hai; Qiu, Ze-wen; Wang, Lang-ping; Wang, Xiao-feng; Ma, Guo-wu

    2015-12-01

    As an attractive technique for the improvement of biomaterials, Plasma immersion ion implantation (PIII) has been applied to modifying the titanium material for dental implant application. The present study investigated the cytocompatibility and early osseointegration of fluoride-ion-implanted titanium (F-Ti) surface and implants, both characterizing in their composition of titanium oxide and titanium fluoride. The cytocompatibility of F-Ti was evaluated in vitro by using scanning electron microscope, Cell Counting Kit-8 assay, alkaline phosphatase activity assay, and quantitative real-time polymerase chain reaction. The results showed that the F-Ti weakened the effects that Porphyromonas gingivalis exerted on the MG-63 cells in terms of morphology, proliferation, differentiation, and genetic expression when MG-63 cells and Porphyromonas gingivalis were co-cultured on the surface of F-Ti. Meanwhile, the osteogenic activity of F-Ti implants was assessed in vivo via evaluating the histological morphology and estimating histomorphometric parameters. The analysis of toluidine blue staining indicated that the new bone was more mature in subjects with F-Ti group, which exhibited the Haversian system, and the mean bone-implant contact value of F-Ti group was slightly higher than that of cp-Ti group (p>0.05). Fluorescence bands were wider and brighter in the F-Ti group, and the intensity of fluorochromes deposited at the sites of mineralized bone formation was significantly higher for F-Ti surfaces than for cp-Ti surfaces, within the 2nd, 3rd and 4th weeks (p<0.05). An indication is that the fluoride modified titanium can promote cytocompatibility and early osseointegration, thus providing a promising alternative for clinical use. PMID:26519937

  18. Ion Implanted Nanolayers in Alloys and Ceramic Coatings for Improved Resistance to High-Temperature Corrosion

    NASA Astrophysics Data System (ADS)

    Werner, Z.; Szymczyk, W.; Piekoszewski, J.

    Ion implantation effects on resistance of alloys and ceramic coatings to the high-temperature corrosion have been reviewed. The most significant results on implantation of reactive elements (Y, La, Ce and other rare earth elements) into alloys and aluminum, boron, silicon, tantalum, and titanium into ceramic coatings have been cited. Ion implantation affects not only the oxide growth rate, but also seems to modify the growth mechanism and the oxide structure.

  19. Ion implantation in compound semiconductors for high-performance electronic devices

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-05-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

  20. Plasma focus ion beam-scaling laws

    NASA Astrophysics Data System (ADS)

    Saw, S. H.

    2014-08-01

    Measurements on plasma focus ion beams include various advanced techniques producing a variety of data which has yet to produce benchmark numbers. Recent numerical experiments using an extended version of the Lee Code has produced reference numbers and scaling trends for number and energy fluence of deuteron beams as functions of stored energy E0. At the pinch exit the ion number fluence (ions m-2) and energy fluence (J m-2) computed as 2.4-7.8×1020 and 2.2-33×106 respectively were found to be independent of E0 from 0.4 - 486 kJ. This work was extended to the ion beams for various gases. The results show that, for a given plasma focus, the fluence, flux, ion number and ion current decrease from the lightest to the heaviest gas except for trend-breaking higher values for Ar fluence and flux. The energy fluence, energy flux, power flow and damage factors are relatively constant from H2 to N2 but increase for Ne, Ar, Kr and Xe due to radiative cooling and collapse effects. This paper reviews this work and in a concluding section attempts to put the accumulating large amounts of data into the form of a scaling law of beam energy Ebeam versus storage energy E0 taking the form for deuteron as: {Ebeam} = 18.2{E}01.23; where Ebeam is in J and E0 is in kJ. It is hoped that the establishment of such scaling laws places on a firm footing the reference quantitative ideas for plasma focus ion beams.

  1. Cell attachment of polypropylene surface-modified by COOH + ion implantation

    NASA Astrophysics Data System (ADS)

    Li, D. J.; Niu, L. F.

    2002-06-01

    Carboxy ion (COOH +) implantation was performed at the energy of 50 keV with fluences ranging from 1×10 14 to 1×10 15 ions/cm 2 at room temperature for polypropylene (PP). The effects of ion implantation on cells (immune macrophages, 3T3 mouse fibroblasts and human endothelial cells) were studied in vitro. Tests of cell attachment gave interesting results that the 3T3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted PP showed much better attachment and proliferation than that on pristine PP. At the same time, the COOH + ion implantation also induced low macrophage attachment with normal cellular morphology. Results of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FTIR) analysis showed that COOH + ion implantation caused the rearrangement of chemical bonds and the formation of some new O-containing groups, which was responsible for the enhancement of the biocompatibility of PP.

  2. Electron-less negative ion extraction from ion-ion plasmas

    SciTech Connect

    Rafalskyi, Dmytro; Aanesland, Ane

    2015-03-09

    This paper presents experimental results showing that continuous negative ion extraction, without co-extracted electrons, is possible from highly electronegative SF{sub 6} ion-ion plasma at low gas pressure (1 mTorr). The ratio between the negative ion and electron densities is more than 3000 in the vicinity of the two-grid extraction and acceleration system. The measurements are conducted by both magnetized and non-magnetized energy analyzers attached to the external grid. With these two analyzers, we show that the extracted negative ion flux is almost electron-free and has the same magnitude as the positive ion flux extracted and accelerated when the grids are biased oppositely. The results presented here can be used for validation of numerical and analytical models of ion extraction from ion-ion plasma.

  3. Comparison of Wear Resistance Mechanisms of Die Steel Implanted with C and mo Ions

    NASA Astrophysics Data System (ADS)

    Cheng, M. F.; Yang, J. H.; Luo, X. D.; Zhang, T. H.

    Mo and C ions extracted from a metal vapor vacuum arc ion source were implanted into the surface of die steel (H13) to compare the wear resistance mechanisms of the implanted samples, respectively. The concentration depth profiles of implanted ions were measured using Rutherford backscattering spectroscopy and calculated by a code called TRIDYN. The structures of the implanted steel were observed by X-ray photoelectron spectroscopy and grazing-angle X-ray diffraction, respectively. It was found that the conventional heat-treated H13 steel could not be further hardened by the subsequent implanted C ions, and the thickness of the implanted layer was not an important factor for the Mo and C ion implantation to improve the wear resistance of the H13 steel. Mo ion implantation could obviously improve the wear resistance of the steel at an extraction voltage of 48 kV and a dose of 5 × 1017cm-2 due to formation of a modification layer of little oxidation with Mo2C in the implanted surface.

  4. Surface stiffening and enhanced photoluminescence of ion implanted cellulose - polyvinyl alcohol - silica composite.

    PubMed

    Shanthini, G M; Sakthivel, N; Menon, Ranjini; Nabhiraj, P Y; Gómez-Tejedor, J A; Meseguer-Dueñas, J M; Gómez Ribelles, J L; Krishna, J B M; Kalkura, S Narayana

    2016-11-20

    Novel Cellulose (Cel) reinforced polyvinyl alcohol (PVA)-Silica (Si) composite which has good stability and in vitro degradation was prepared by lyophilization technique and implanted using N(3+) ions of energy 24keV in the fluences of 1×10(15), 5×10(15) and 1×10(16)ions/cm(2). SEM analysis revealed the formation of microstructures, and improved the surface roughness on ion implantation. In addition to these structural changes, the implantation significantly modified the luminescent, thermal and mechanical properties of the samples. The elastic modulus of the implanted samples has increased by about 50 times compared to the pristine which confirms that the stiffness of the sample surface has increased remarkably on ion implantation. The photoluminescence of the native cellulose has improved greatly due to defect site, dangling bonds and hydrogen passivation. Electric conductivity of the ion implanted samples was improved by about 25%. Hence, low energy ion implantation tunes the mechanical property, surface roughness and further induces the formation of nano structures. MG63 cells seeded onto the scaffolds reveals that with the increase in implantation fluence, the cell attachment, viability and proliferation have improved greatly compared to pristine. The enhancement of cell growth of about 59% was observed in the implanted samples compared to pristine. These properties will enable the scaffolds to be ideal for bone tissue engineering and imaging applications. PMID:27561534

  5. Sputtering erosion in ion and plasma thrusters

    NASA Astrophysics Data System (ADS)

    Ray, Pradosh K.

    1995-08-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  6. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  7. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

    SciTech Connect

    Zinkle, S.J.; Snead, L.L.

    1996-04-01

    Amorphization cannot be tolerated in ceramics proposed for fusion energy applications due to the accompanying large volume change ({approx} 15% in SiC) and loss of strength. Ion beam irradiations at temperatures between 200 K and 450 K were used to examine the likelihood of amorphization in ceramics being considered for the structure (SiC) and numerous diagnostic and plasma heating systems (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO, Si{sub 3}N{sub 4}) in fusion energy systems. The microstructures were examined following irradiation using cross-section transmission electron microscopy. The materials in this study included ceramics with predominantly covalent bonding (SiC, Si{sub 3}N{sub 4}) and predominantely ionic bonding (MgAl{sub 2}O{sub 4}, Al{sub 2}O{sub 3}, MgO). The samples were irradiated with a variety of ion beams (including some simultaneous dual ion beam irradiations) in order to investigate possible irradiation spectrum effects. The ion energies were >0.5 MeV in all cases, so that the displacement damage effects could be examined in regions well separated from the implanted ion region.

  8. Carbon Multicharged Ion Generation from Laser Plasma

    NASA Astrophysics Data System (ADS)

    Balki, Oguzhan; Elsayed-Ali, Hani E.

    2014-10-01

    Multicharged ions (MCI) have potential uses in different areas such as microelectronics and medical physics. Carbon MCI therapy for cancer treatment is considered due to its localized energy delivery to hard-to-reach tumors at a minimal damage to surrounding tissues. We use a Q-switched Nd:YAG laser with 40 ns pulse width operated at 1064 nm to ablate a graphite target in ultrahigh vacuum. A time-of-flight energy analyzer followed by a Faraday cup is used to characterize the carbon MCI extracted from the laser plasma. The MCI charge state and energy distribution are obtained. With increase in the laser fluence, the ion charge states and ion energy are increased. Carbon MCI up to C+9 are observed along with carbon clusters. When an acceleration voltage is applied between the carbon target and a grounded mesh, ion extraction is observed to increase with the applied voltage. National Science Foundation.

  9. Very Large Area/Volume Microwave ECR Plasma and Ion Source

    NASA Technical Reports Server (NTRS)

    Foster, John E. (Inventor); Patterson, Michael J. (Inventor)

    2009-01-01

    The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cyclotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applications or for plasma processing applications such as etching, deposition, ion milling and ion implantation. The large area source is at least five times larger than the 12-inch wafers being processed to date. Its rectangular shape makes it easier to accommodate to materials processing than sources that are circular in shape. The source itself represents the largest ECR ion source built to date. It is electrodeless and does not utilize electromagnets to generate the ECR magnetic circuit, nor does it make use of windows.

  10. Ion beam sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1976-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

  11. Ion-beam-sputter modification of the surface morphology of biological implants

    NASA Technical Reports Server (NTRS)

    Weigand, A. J.; Banks, B. A.

    1977-01-01

    The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

  12. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  13. Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping.

    PubMed

    Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D P; Jha, Animesh; Jose, Gin

    2015-01-01

    Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er(3+)-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er(3+)-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er(3+)-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er(3+)-ions without clustering, validated by the record high lifetime-density product 0.96 × 10(19) s.cm(-3). Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er(3+) concentration via different target glasses. The increased Er(3+) content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease. PMID:26370060

  14. Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping

    NASA Astrophysics Data System (ADS)

    Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D. P.; Jha, Animesh; Jose, Gin

    2015-09-01

    Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er3+-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er3+-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er3+-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er3+-ions without clustering, validated by the record high lifetime-density product 0.96 × 1019 s.cm-3. Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er3+ concentration via different target glasses. The increased Er3+ content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease.

  15. Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping

    PubMed Central

    Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D.P.; Jha, Animesh; Jose, Gin

    2015-01-01

    Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er3+-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er3+-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er3+-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er3+-ions without clustering, validated by the record high lifetime-density product 0.96 × 1019 s.cm−3. Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er3+ concentration via different target glasses. The increased Er3+ content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease. PMID:26370060

  16. Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation

    SciTech Connect

    Schenkel, T.; Rangelow, I.W.; Keller, R.; Park, S.J.; Nilsson, J.; Persaud, A.; Radmilivitc, V.R.; Liddle, J.A.; Grabiec, P.; Bokor, J.; Schneider, D.H.

    2003-07-16

    In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers.

  17. A simple ion implanter for material modifications in agriculture and gemmology

    NASA Astrophysics Data System (ADS)

    Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

    2015-12-01

    In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

  18. Extraction and Acceleration of Ions from an Ion-Ion Plasma

    SciTech Connect

    Popelier, Lara; Aanesland, Ane; Chabert, Pascal

    2011-09-26

    Extraction and acceleration of positive and negative ions from a strong electronegative plasma and from an ion-ion plasma is investigated in the PEGASES thruster, working with SF{sub 6}. The plasma is generated in a cylindrical quartz tube terminated by metallic endplates. The electrons are confined by a static magnetic field along the axis of the cylinder. The electron mobility along the field is high and the electrons are determining the sheaths in front of the endplates. The core plasma potential can therefore be controlled by the bias applied to the endplates. An ion-ion plasma forms at the periphery as a result of electron confinement and ions can freely diffuse along the perpendicular direction or extraction axis. Langmuir probe and RFEA measurements are carried out along this axis. The measured ion energy distributions shows a single peak centered around a potential consistent with the plasma potential and the peak position could be controlled with a positive voltage applied to the endplates. When the endplates are biased negatively, the plasma potential saturates and remained close to 15 V. A beam of negatively charged particles can be observed under certain conditions when the endplates were biased negatively.

  19. Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

    SciTech Connect

    Gao, Yuan; Lan, Chune; Xue, Jianming; Yan, Sha; Wang, Yugang; Xu, Fujun; Shen, Bo; Zhang, Yanwen

    2010-06-08

    Wurtzite undoped GaN epilayers (0 0 0 1) was implanted with 500 keV Au+ ions at room temperature under different doses, respectively. Ion implantation was performed through photoresist masks on GaN to produce alternating strips. The experimental results showed that the step height of swelling and decomposition in implanted GaN depended on ion dose and annealing temperature, i.e., damage level and its evolution. This damage evolution is contributed to implantation-induced defect production, and defect migration/accumulation occurred at different levels of displacement per atom. The results suggest that the swelling is due to the formation of porous structures in the amorphous region of implanted GaN. The decomposition of implanted area can be attributed to the disorder saturation and the diffusion of surface amorphous layer.

  20. Effects of ion implantation on the photoferroelectric properties of lead lanthanum zirconate titanate ceramics

    SciTech Connect

    Land, C.E.; Peercy, P.S.

    1981-01-01

    Earlier studies of Ar-, Ar + Ne- and Ar + Ne + He- implanted ferroelectric-phase lead lanthanum zirconate titanate (PLZT) ceramics indicate that ion implantation can increase the intrinsic (near-uv) photoferroelectric sensitivity by more than four orders of magnitude compared to that of unimplanted PLZT. More recent studies involving implantation of chemically active ions, e.g., Al and Cr, indicate that the absorption spectrum of the implanted region can be extended from the near-uv to the visible, and that the extrinsic (visible-light) photoferroelectric sensitivity can be improved substantially with respect to that of PLZT implanted with inert ions. The results of these studies are reviewed and photographic sensitivities of Ar-, Ar + Ne-, Ar + Ne + He-, Al-, Cr-, Fe-, and Fe + Ne- implanted PLZT at both near-uv and visible-light wavelengths are compared with the sensitivities of other image storage media.