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Sample records for polycrystalline thin-film cadmium-telluride

  1. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its polycrystalline thin-film research in the area of cadmium telluride. The scope and core competencies and capabilities are discussed.

  2. Polycrystalline Thin-Film Research: Cadmium Telluride (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for Polycrystalline Thin-Film Research: Cadmium Telluride at the National Center for Photovoltaics.

  3. Thin film cadmium telluride solar cell

    SciTech Connect

    Mitchell, R.

    1987-03-17

    A photovoltaic cell is described comprising: (a) a substrate layer consisting of a transparent or semi-transparent material; (b) an n conductivity type layer of tin oxide contiguous to the substrate layer; (c) a rho conductivity type layer of polycrystalline cadmium telluride contiguous to the layer of tin oxide thereby forming a pn junction, the layer of cadmium telluride containing atoms of phosphorus; and (d) a layer of lead telluride contiguous to the layer of the cadmium telluride.

  4. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  5. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    1986-09-01

    This is the final technical progress report of a research program entitled Thin-Film Cadmium Telluride Solar Cells. The major objective was to demonstrate chemical vapor deposition (CVD)-grown CdTe devices with a photovoltaic efficiency of at least 10%. The work included: (1) CVD and characterization of p-CdTe films of controlled resistivity; (2) deposition and characterization of heterojunction partners; (3) surface passivation of CdTe; and (4) preparation and characterization of thin-film solar cells. The CVD of p-CdTe was optimized with emphasis on resistivity control through nonstoichiometry and extrinsic doping. Both carbon and oxygen were identified as acceptors. The use of thermal oxidation for surface passivation of CdTe was investigated using capacitance-voltage measurement. Device-quality thermal oxide can be prepared by hydrogen annealing of CdTe before oxidation. Deposition and characterization of CdS, CdO, and ZnO:In were also carried out. The best thin-film cell to date had a conversion efficiency near 9%.

  6. Thin film cadmium telluride solar cells

    SciTech Connect

    Chu, T.L.; Chu, S.S.; Xi, X.J.; Yang, Y.T.

    1983-05-01

    Cadmium telluride films have been deposited on coated graphite and mullite substrates by the direct combination of the vapors of the elements in a hydrogen atmosphere. The properties of nearly stoichiometric films on mullite substrates were measured by the van der Pauw technique in the temperature range of 25/sup 0/ - 150/sup 0/C. The deposition of n-type cadmium telluride by using hydrogen iodide as a dopant and the deposition of p-type cadmium telluride films by using arsine or phosphine as a dopant were studied. Schottky barrier solar cells were prepared from n-type cadmium telluride films and heterojunction cells from p-type cadmium telluride films.

  7. Polycrystalline thin film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report, 20 March 1995--19 March 1996

    SciTech Connect

    Trefny, J U; Mao, D

    1997-04-01

    The objective of this project is to develop improved processes for fabricating CdTe/CdS polycrystalline thin-film solar cells. Researchers used electrodeposition to form CdTe; electrodeposition is a non-vacuum, low-cost technique that is attractive for economic, large-scale production. During the past year, research and development efforts focused on several steps that are most critical to the fabricating high-efficiency CdTe solar cells. These include the optimization of the CdTe electrodeposition process, the effect of pretreatment of CdS substrates, the post-deposition annealing of CdTe, and back-contact formation using Cu-doped ZnTe. Systematic investigations of these processing steps have led to a better understanding and improved performance of the CdTe-based cells. Researchers studied the structural properties of chemical-bath-deposited CdS thin films and their growth mechanisms by investigating CdS samples prepared at different deposition times; investigated the effect of CdCl{sub 2} treatment of CdS films on the photovoltaic performance of CdTe solar cells; studied Cu-doped ZnTe as a promising material for forming stable, low-resistance contacts to the p-type CdTe; and investigated the effect of CdTe and CdS thickness on the photovoltaic performance of the resulting cells. As a result of their systematic investigation and optimization of the processing conditions, researchers improved the efficiency of CdTe/CdS cells using ZnTe back-contact and electrodeposited CdTe. The best CdTe/CdS cell exhibited a V{sub oc} of 0.778 V, a J{sub sc} of 22.4 mA/cm{sup 2}, a FF of 74%, and an efficiency of 12.9% (verified at NREL). In terms of individual parameters, researchers obtained a V{sub oc} over 0.8 V and a FF of 76% on other cells.

  8. High efficiency thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, S. S.; Ang, S. T.; Han, K. D.; Liu, Y. Z.

    Thin films of cadmium telluride deposited by the close-spaced sublimation (CSS) technique have been characterized and used for the preparation of CdS/CdTe heterojunction solar cells. The current-voltage and capacitance-voltage relations of CdS/CdTe heterojunctions indicate that the cleanliness of the interface is an important factor affecting the characteristics of the solar cells. The best cell has an area of about 1.2 sq cm and an AM1.5 (global) efficiency of 10.5 percent.

  9. Thin film cadmium telluride photovoltaic cells

    SciTech Connect

    Compaan, A.; Bohn, R. )

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  10. Thin-film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  11. Thin film cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  12. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  13. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  14. Polycrystalline thin-film, cadmium-telluride solar cells fabricated by electrodeposition cells. Final subcontract report, March 20, 1992--April 27, 1995

    SciTech Connect

    Trefny, J.U.; Mao, D.; Kim, D.

    1995-10-01

    The objective of this project was to develop improved processes for the fabrication of CdTe/CdS polycrystalline thin film solar cells. The technique we used for the formation of CdTe, electrodeposition, was a non-vacuum, low-cost technique that is attractive for economic, large-scale production. Annealing effects and electrical properties are discussed.

  15. Using atomistic simulations to model cadmium telluride thin film growth.

    PubMed

    Yu, Miao; Kenny, Steven D

    2016-03-16

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1~10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer. PMID:26881827

  16. Using atomistic simulations to model cadmium telluride thin film growth

    NASA Astrophysics Data System (ADS)

    Yu, Miao; Kenny, Steven D.

    2016-03-01

    Cadmium telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to conduct research on how defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. On-the-fly kinetic Monte Carlo technique is used to simulate the CdTe thin film growth on the (1 1 1) surfaces. The results show that on the (1 1 1) surfaces the growth mechanisms on surfaces which are terminated by Cd or Te are quite different, regardless of the deposition energy (0.1∼ 10 eV). On the Te-terminated (1 1 1) surface the deposited clusters first form a single mixed species layer, then the Te atoms in the mixed layer moved up to form a new layer. Whilst on the Cd-terminated (1 1 1) surface the new Cd and Te layers are formed at the same time. Such differences are probably caused by stronger bonding between ad-atoms and surface atoms on the Te layer than on the Cd layer.

  17. Study of Photo-Conductivity in Nano-Crystalline Cadmium Telluride Thin Films

    SciTech Connect

    Mahesha, M. G.; Bangera, Kasturi V.; Shivakumar, G. K.

    2011-07-15

    Nano crystallite thin films of Cadmium Telluride have been grown on glass substrates by thermal evaporation under vacuum. The growth conditions to get stoichiometric films of the compound have been optimized. The effect of substrate temperature and annealing on photosensitivity has been investigated. Also the effect of deposition parameters and post deposition annealing on rise time and decay time have been studied in detail.

  18. Structural and Optical Properties of Sputtered Cadmium Telluride Thin Films Deposited on Flexible Substrates for Photovoltaic Applications.

    PubMed

    Song, Woochang; Lee, Kiwon; Kim, Donguk; Lee, Jaehyeong

    2016-05-01

    Cadmium telluride (CdTe) is a photovoltaic technology based on the use of thin films of CdTe to absorb and convert sunlight into electricity. In this paper, polycrystalline CdTe thin films were deposited using radio frequency magnetron sputtering onto flexible substrates including polyimide and molybdenum foil. The structural and optical properties of the films grown at various sputtering pressures were investigated using X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), and UV/Nis/NIR spectrophotometry. The sputtering pressure was found to have significant effects on the structural properties, including crystallinity, preferential orientation, and microstructure. Deterioration of the optical properties of CdTe thin films were observed at high sputtering pressure. PMID:27483904

  19. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual subcontract report, 20 March 1992--19 March 1993

    SciTech Connect

    Trefny, J.U.; Furtak, T.E.; Wada, N.; Williamson, D.L.; Kim, D.

    1993-08-01

    This report describes progress during the first year of a 3-year program at Colorado School of Mines, based upon earlier studies performed by Ametek Corporation, to develop specific layers of the Ametek n-i-p structure as well as additional studies of several transparent conducting oxides. Thin films of ZnO and ZnO:Al were deposited under various conditions. For the n-layer of the Ametek structure, a dip-coating method was developed for the deposition of CdS films. The authors also present data on the characterization of these films by X-ray diffraction, Raman spectroscopy, scanning tunneling microscopy, small-angle X-ray scattering, and other techniques. They made progress in the electrodeposition of the CdTe i-layer of the Ametek structure. They developed appropriate electrochemical baths and are beginning to understand the role of the many experimental parameters that must be controlled to obtain high-quality films of this material. They explored the possibility of using an electrochemical process for fabricating the ZnTe p-layer. Some preliminary success was achieved, and this step will be pursued in the next phase. Finally, they fabricated a number of ``dot`` solar cells with the structure glass/SnO{sub 2}/CdS/CdTe/Au. Several cells with efficiencies in the range of 5%-6% were obtained, and they are confident, given recent progress, that cells with efficiencies in excess of 10% will be achieved in the near future.

  20. Ion implantation of erbium into polycrystalline cadmium telluride

    SciTech Connect

    Ushakov, V. V. Klevkov, Yu. V.; Dravin, V. A.

    2015-05-15

    The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

  1. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells

    SciTech Connect

    Chu, T.L. )

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  2. Spectroscopic ellipsometry as a process control tool for manufacturing cadmium telluride thin film photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Smith, Westcott P.

    In recent decades, there has been concern regarding the sustainability of fossil fuels. One of the more promising alternatives is Cadmium Telluride (CdTe) thin-film photovoltaic (PV) devices. Improved quality measurement techniques may aid in improving this existing technology. Spectroscopic ellipsometry (SE) is a common, non-destructive technique for measuring thin films in the silicon wafer industry. SE results have also been tied to properties believed to play a role in CdTe PV device efficiency. A study assessing the potential of SE for use as a quality measurement tool had not been previously reported. Samples of CdTe devices produced by both laboratory and industrial scale processes were measured by SE and Scanning Electron Microscopy (SEM). Mathematical models of the optical characteristics of the devices were developed and fit to SE data from multiple angles and locations on each sample. Basic statistical analysis was performed on results from the automated fits to provide an initial evaluation of SE as a quantitative quality measurement process. In all cases studied, automated SE models produced average stack thickness values within 10% of the values produced by SEM, and standard deviations for the top bulk layer thickness were less than 1% of the average values.

  3. US polycrystalline thin film solar cells program

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L. )

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  4. US Polycrystalline Thin Film Solar Cells Program

    NASA Astrophysics Data System (ADS)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  5. Progress and issues in polycrystalline thin-film PV technologies

    SciTech Connect

    Zweibel, K.; Ullal, H.S.; Roedern, B. von

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  6. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    SciTech Connect

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B.; Kunnen, G. R.; Allee, D. R.; Sastré-Hernández, J.; Contreras-Puente, G.; Mendoza-Pérez, R.

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  7. Thin-film cadmium telluride photovoltaic cells. Final subcontract report, 1 November 1992--1 January 1994

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.

    1994-09-01

    This report describes work to develop and optimize radio-frequency (rf) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by rf sputtering was studied as a function of substrate temperature, gas pressure, and rf power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

  8. Polycrystalline thin film photovoltaics

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Ullal, H. S.; Mitchell, R. L.

    Significant progress has recently been made towards improving the efficiencies of polycrystalline thin-film solar cells and modules using CuInSe2 and CdTe. The history of using CuInSe2 and CdTe for solar cells is reviewed. Initial outdoor stability tests of modules are encouraging. Progress in semiconductor deposition techniques has also been substantial. Both CuInSe2 and CdTe are positioned for commercialization during the 1990s. The major participants in developing these materials are described. The US DOE/SERI (Solar Energy Research Institute) program recognizes the rapid progress and important potential of polycrystalline thin films to meet ambitious cost and performance goals. US DOE/SERI is in the process of funding an initiative in this area with the goal of ensuring US leadership in the development of these technologies. The polycrystalline thin-film module development initiative, the modeling and stability of the devices, and health and safety issues are discussed.

  9. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  10. Polycrystalline thin-film solar cells and modules

    SciTech Connect

    Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

    1991-12-01

    This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

  11. Polycrystalline thin-films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.

    1986-02-01

    This annual report summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Major subcontracted work in this area has concentrated on development of CuInSe2 and CdTe technologies. During FY 1985, major progress was achieved by subcontractors in: (1) developing a new, low-cost method of fabricating CuInSe2, and (2) improving the efficiency of CuInSe2 devices by about 10% (relative). The report also lists research planned to meet the Department of Energy's goals in these technologies.

  12. Research on polycrystalline thin-film materials, cells, and modules

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1990-11-01

    DOE supports research activities in polycrystalline thin films through the Polycrystalline Thin Film Program. This program includes includes R and D in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective is to support R and D of photovoltaic cells and modules that meet the DOE long term goals of high efficiency (15 to 20 percent), low cost ($50/sq cm), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin film CuInSe2 and CdTe solar cells and modules. These have become the leading thin film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe(sub 2) and CdTe modules. The recent progress and future directions are studied of the Polycrystalline Thin Film Program and the status of the subcontracted research on these promising photovoltaic materials.

  13. Research on polycrystalline thin-film materials, cells, and modules

    SciTech Connect

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1990-11-01

    The US Department of Energy (DOE) supports research activities in polycrystalline thin films through the Polycrystalline Thin-Film Program at the Solar Energy Research Institute (SERI). This program includes research and development (R D) in both copper indium diselenide and cadmium telluride thin films for photovoltaic applications. The objective of this program is to support R D of photovoltaic cells and modules that meet the DOE long-term goals of high efficiency (15%--20%), low cost ($50/m{sup 2}), and reliability (30-year life time). Research carried out in this area is receiving increased recognition due to important advances in polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules. These have become the leading thin-film materials for photovoltaics in terms of efficiency and stability. DOE has recognized this potential through a competitive initiative for the development of CuInSe{sub 2} and CdTe modules. This paper focuses on the recent progress and future directions of the Polycrystalline Thin-Film Program and the status of the subcontracted research on these promising photovoltaic materials. 26 refs., 12 figs, 1 tab.

  14. Polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  15. Thin films and solar cells of cadmium telluride and cadmium zinc telluride

    NASA Astrophysics Data System (ADS)

    Ferekides, Christos Savva

    The objectives of this dissertation are to investigate (1) the metalorganic chemical vapor deposition (MOCVD) and properties of cadmium telluride (CdTe) and cadmium zinc telluride (Cd(1-x)Zn(z)Te) films and junctions, and their potential application to solar cells, and (2) the fabrication and characterization of CdTe solar cells by the close spaced sublimation (CSS) technique. CdTe and Cd(1-x)Zn(x)Te films have been deposited by MOCVD on a variety of substrates at 300-400 C. The effect of the deposition parameters and post deposition heat treatments on the electrical, optical, and structural properties have been investigated. Heterojunctions of the configuration CdTe/transparent conducting semiconductor (TCS) and Cd(1-x)Zn(x)Te/TCS have been prepared and characterized. CdTe(MOCVD)/CdS and Cd(1-x)Zn(x)Te(E sub g = 1.65eV)/Cd(1-x)Zn(x)S solar cells with efficiencies of 9.9 percent and 2.4 percent, respectively have been fabricated. The as-deposited CdTe(MOCVD)/CdS junctions exhibited high dark current densities due to deflects at the interface associated with small grain size. Their characteristics of the Cd(1-x)Zn(x)Te junctions degraded with increasing Zn concentration due to the crystalline quality and very small grain size (0.3 microns) in films with high ZnTe contents (greater than 25 percent). No effective post-deposition heat treatment has been developed. CdTe/CdS solar cells have also been fabricated by the close spaced sublimation (CSS). Significant improvements in material and processing have been made, and in collaboration with fellow researchers an AM1.5 conversion efficiency of 13.4 percent has been demonstrated, the highest efficiency ever measured for such devices. The highest conversion efficiency for the CdTe(CSS)/CdS solar cell was achieved by reaching high open-circuit voltages and fill factors, while the short-circuit current densities were moderate. These results indicate that further improvements to increase the short-circuit current densities

  16. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  17. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  18. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 23 July 1990--31 October 1991

    SciTech Connect

    Compaan, A.; Bohn, R.

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  19. Polycrystalline thin-film technology: Recent progress in photovoltaics

    SciTech Connect

    Mitchell, R.L.; Zweibel, K.; Ullal, H.S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe{sub 2}), cadmium telluride (CdTe), and thin-film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin-film CuInSe{sub 2}, has made some rapid advances in terms of high efficiency and long-term reliability. For CuInSe{sub 2} power modules, a world record has been reported on a 0.4-m{sup 2} module with an aperture-area efficiency of 10.4% and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe{sub 2} modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 cm{sup 2}. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10%; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  20. Polycrystalline thin-film technology: Recent progress in photovoltaics

    NASA Astrophysics Data System (ADS)

    Mitchell, R. L.; Zweibel, K.; Ullal, H. S.

    1991-12-01

    Polycrystalline thin films have made significant technical progress in the past year. Three of these materials that have been studied extensively for photovoltaic (PV) power applications are copper indium diselenide (CuInSe2), cadmium telluride (CdTe), and thin film polycrystalline silicon (x-Si) deposited on ceramic substrates. The first of these materials, polycrystalline thin film CuInSe2, has made some rapid advances in terms of high efficiency and long term reliability. For CuInSe2 power modules, a world record has been reported on a 0.4 sq m module with an aperture-area efficiency of 10.4 pct. and a power output of 40.4 W. Additionally, outdoor reliability testing of CuInSe2 modules, under both loaded and open-circuit conditions, has resulted in only minor changes in module performance after more than 1000 days of continuous exposure to natural sunlight. CdTe module research has also resulted in several recent improvements. Module performance has been increased with device areas reaching nearly 900 sq cm. Deposition has been demonstrated by several different techniques, including electrodeposition, spraying, and screen printing. Outdoor reliability testing of CdTe modules was also carried out under both loaded and open-circuit conditions, with more than 600 days of continuous exposure to natural sunlight. These tests were also encouraging and indicated that the modules were stable within measurement error. The highest reported aperture-area module efficiency for CdTe modules is 10 pct.; the semiconductor material was deposited by electrodeposition. A thin-film CdTe photovoltaic system with a power output of 54 W has been deployed in Saudi Arabia for water pumping. The Module Development Initiative has made significant progress in support of the Polycrystalline Thin-Film Program in the past year, and results are presented in this paper.

  1. High-Efficiency Thin-Film Cadmium Telluride Photovoltaic Cells; Final Subcontract Report,

    SciTech Connect

    A.D. Compaan; R.G. Bohn.

    1998-12-09

    This report describes work performed during the past year by The University of Toledo photovoltaics group. Researchers continued to develop rf sputtering for CdS/CdTe thin-film solar cells and to optimize the post-deposition process steps to match the characteristics of the sputtering process. During the fourth phase of the present contract, we focused on determining factors that limit the efficiency in our all-sputtered thin-film CdTe solar cells on soda-lime glass. These issues include controlling CdS/CdTe interdiffusion, understanding the properties of the CdSxTe1-x alloy, optimizing process conditions for CdCl2 treatments, manipulating the influence of ion bombardment during rf sputtering, and understanding the role of copper in quenching photoluminescence and carrier lifetimes in CdTe. To better understand the important CdS/CdTe interdiffusion process, we have continued our collaboration with the University at Buffalo and Brookhaven National Synchrotron Light Source in measurements using grazing-incidence X-rays. Interdiffusion results in the formation of the ternary alloy material CdSxTe1-x at or near the heterojunction, where its properties are critical to the operation of the solar cell. We have placed significant effort on characterizing this alloy, an effort begun in the last phase. A complete set of films spanning the alloy range, prepared by pulsed-laser deposition, has now been characterized by wavelength dispersive X-ray spectroscopy and optical absorption at NREL; by Raman scattering, X-ray diffraction, and electrical measurements in our lab; and by spectroscopic ellipsometry at Brooklyn College. We continued to participate in cooperative activity with the CdTe National Team. We prepared a series of depositions on borosilicate glass substrates having doped SnO2 layers coated with TiO2 (prepared by the University of South Florida and Harvard) and similar substrates having a resistive SnO2 layer on the doped tin oxide (fabricated by Golden Photon). The

  2. Development and evaluation of polycrystalline cadmium telluride dosimeters for accurate quality assurance in radiation therapy

    NASA Astrophysics Data System (ADS)

    Oh, K.; Han, M.; Kim, K.; Heo, Y.; Moon, C.; Park, S.; Nam, S.

    2016-02-01

    For quality assurance in radiation therapy, several types of dosimeters are used such as ionization chambers, radiographic films, thermo-luminescent dosimeter (TLD), and semiconductor dosimeters. Among them, semiconductor dosimeters are particularly useful for in vivo dosimeters or high dose gradient area such as the penumbra region because they are more sensitive and smaller in size compared to typical dosimeters. In this study, we developed and evaluated Cadmium Telluride (CdTe) dosimeters, one of the most promising semiconductor dosimeters due to their high quantum efficiency and charge collection efficiency. Such CdTe dosimeters include single crystal form and polycrystalline form depending upon the fabrication process. Both types of CdTe dosimeters are commercially available, but only the polycrystalline form is suitable for radiation dosimeters, since it is less affected by volumetric effect and energy dependence. To develop and evaluate polycrystalline CdTe dosimeters, polycrystalline CdTe films were prepared by thermal evaporation. After that, CdTeO3 layer, thin oxide layer, was deposited on top of the CdTe film by RF sputtering to improve charge carrier transport properties and to reduce leakage current. Also, the CdTeO3 layer which acts as a passivation layer help the dosimeter to reduce their sensitivity changes with repeated use due to radiation damage. Finally, the top and bottom electrodes, In/Ti and Pt, were used to have Schottky contact. Subsequently, the electrical properties under high energy photon beams from linear accelerator (LINAC), such as response coincidence, dose linearity, dose rate dependence, reproducibility, and percentage depth dose, were measured to evaluate polycrystalline CdTe dosimeters. In addition, we compared the experimental data of the dosimeter fabricated in this study with those of the silicon diode dosimeter and Thimble ionization chamber which widely used in routine dosimetry system and dose measurements for radiation

  3. Thin film cadmium telluride photovoltaic cells. Annual subcontract report, 1 November 1991--31 October 1992

    SciTech Connect

    Compaan, C.D.; Bohn, R.G.

    1993-10-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering and laser-driven physical vapor deposition (LDPVD) for CdTe-based thin-film solar cells. Both of these techniques are vacuum-based and share several other common physical principles. However, they differ somewhat in the typical kinetic energies of Cd, Te, and S that impact on the growth surface. The values of several processing parameters-optimized with the LDPVD technique-were taken as starting values for the RF sputtering method. We completed an initial optimization of the sputtering parameters for the CdTe growth and also successfully sputtered CdS for the first time. In addition, we successfully fabricated what we believe are the first CdS/CdTe cells in which RF sputtering was used for both CdS and CdTe layers. We achieved an all-LDPVD ell with an air mass (AM) 1.5 efficiency of 10.5% and an all-RF-sputtered cell with AM 1.5 efficiency of 10.4%, as tested by NREL.

  4. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  5. Imaging as characterization techniques for thin-film cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Zaunbrecher, Katherine

    The goal of increasing the efficiency of solar cell devices is a universal one. Increased photovoltaic (PV) performance means an increase in competition with other energy technologies. One way to improve PV technologies is to develop rapid, accurate characterization tools for quality control. Imaging techniques developed over the past decade are beginning to fill that role. Electroluminescence (EL), photoluminescence (PL), and lock-in thermography are three types of imaging implemented in this study to provide a multifaceted approach to studying imaging as applied to thin-film CdTe solar cells. Images provide spatial information about cell operation, which in turn can be used to identify defects that limit performance. This study began with developing EL, PL, and dark lock-in thermography (DLIT) for CdTe. Once imaging data were acquired, luminescence and thermography signatures of non-uniformities that disrupt the generation and collection of carriers were identified and cataloged. Additional data acquisition and analysis were used to determine luminescence response to varying operating conditions. This includes acquiring spectral data, varying excitation conditions, and correlating luminescence to device performance. EL measurements show variations in a cell's local voltage, which include inhomogeneities in the transparent-conductive oxide (TCO) front contact, CdS window layer, and CdTe absorber layer. EL signatures include large gradients, local reduction of luminescence, and local increases in luminescence on the interior of the device as well as bright spots located on the cell edges. The voltage bias and spectral response were analyzed to determine the response of these non-uniformities and surrounding areas. PL images of CdTe have not shown the same level of detail and features compared to their EL counterparts. Many of the signatures arise from reflections and severe inhomogeneities, but the technique is limited by the external illumination source used to

  6. Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

    DOEpatents

    Wu, Xuanzhi; Sheldon, Peter

    2000-01-01

    A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

  7. High efficiency cadmium telluride and zinc telluride based thin-film solar cells

    SciTech Connect

    Rohatgi, A.; Sudharsanan, R.; Ringel, S.A.; Chou, H.C. )

    1992-10-01

    This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO{sub 2}/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.

  8. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991

    SciTech Connect

    Chu, T.L.

    1992-04-01

    This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

  9. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; kim, D. K.; Shin, J. W.; Heo, S. U.; Kim, J. S.; Park, J. G.; Nam, S. H.

    2014-01-01

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy.

  10. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, F.S.; Nelson, A.J.

    1996-01-16

    A process is described for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 {micro}m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10{sup {minus}6} torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 {micro}m.

  11. Process for producing large grain cadmium telluride

    DOEpatents

    Hasoon, Falah S.; Nelson, Art J.

    1996-01-01

    A process for producing a cadmium telluride polycrystalline film having grain sizes greater than about 20 .mu.m. The process comprises providing a substrate upon which cadmium telluride can be deposited and placing that substrate within a vacuum chamber containing a cadmium telluride effusion cell. A polycrystalline film is then deposited on the substrate through the steps of evacuating the vacuum chamber to a pressure of at least 10.sup.-6 torr.; heating the effusion cell to a temperature whereat the cell releases stoichiometric amounts of cadmium telluride usable as a molecular beam source for growth of grains on the substrate; heating the substrate to a temperature whereat a stoichiometric film of cadmium telluride can be deposited; and releasing cadmium telluride from the effusion cell for deposition as a film on the substrate. The substrate then is placed in a furnace having an inert gas atmosphere and heated for a sufficient period of time at an annealing temperature whereat cadmium telluride grains on the substrate grow to sizes greater than about 20 .mu.m.

  12. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual technical report, January 20, 1996--January 19, 1997

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1997-08-01

    The University of Toledo photovoltaics group has been instrumental in developing rf sputtering for CDs/CdTe thin-film solar cells. During the third phase of the present contract our work focussed on efforts to determine factors which limit the efficiency in our {open_quotes}all-sputtered{close_quotes} thin-film CdTe solar cells on soda-lime glass. We find that our all-sputtered cells, which are deposited at substantially lower temperature than those by sublimation or vapor deposition, require less aggressive CdCl{sub 2} treatments than do other deposition techniques and this is presumably related to CDs/CdTe interdiffusion. The CDs/CdTe interdiffusion process has been studied by several methods, including photoluminescence and capacitance-voltage measurements. Furthermore, we have deposited special thin bilayer films on quartz and borosilicate glass. Interdiffusion in these thin bilayers have been probed by Rutherford backscattering, with collaborators at Case Western Reserve University, and grazing incidence x-ray scattering (GIXS), with collaborators at the University at Buffalo and Brookhaven National Lab. Also, in order better to understand the properties of the ternary alloy material, we used laser physical vapor deposition to prepare a series of CdS{sub x}Te{sub 1-x} films on borosilicate glass. The composition of the alloy films was determined by wavelength dispersive x-ray spectroscopy at NREL. These films are currently being investigated by us and other groups at NREL and IEC.

  13. High-efficiency, thin-film cadmium telluride photovoltaic cells. Annual subcontract report, 20 January 1994--19 January 1995

    SciTech Connect

    Compaan, A.D.; Bohn, R.G.; Rajakarunanayake, Y.

    1995-08-01

    This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

  14. Effect of chlorine activation treatment on electron beam induced current signal distribution of cadmium telluride thin film solar cells

    NASA Astrophysics Data System (ADS)

    Zywitzki, Olaf; Modes, Thomas; Morgner, Henry; Metzner, Christoph; Siepchen, Bastian; Späth, Bettina; Drost, Christian; Krishnakumar, Velappan; Frauenstein, Sven

    2013-10-01

    We have investigated CdTe thin film solar cells without activation treatment and with CdCl2 activation treatment at temperatures between 370 and 430 °C using a constant activation time of 25 min. For this purpose, CdS/CdTe layers were deposited by closed-space-sublimation on FTO coated float glass. The solar cells were characterized by measurements of the JV characteristics and quantum efficiencies. In addition, ion polished cross sections of the solar cells were prepared for high-resolution FE-SEM imaging of the microstructure and the simultaneous registration of electron beam induced current (EBIC) signal distribution. By measurement of the EBIC signal distribution, it can be shown that without activation treatment the CdTe grain boundaries itself and grain boundary near regions exhibit no EBIC signal, whereas centres of some singular grains already show a distinct EBIC signal. In contrast, after the chlorine activation treatment, the grain boundary near regions exhibit a significant higher EBIC signal than the centre of the grains. The results can be discussed as a direct evidence for defect passivation of grain boundary near regions by the chlorine activation treatment. At activation temperature of 430 °C, additionally, a significant grain growth and agglomeration of the CdS layer can be recognized, which is linked with the formation of voids within the CdS layer and a deterioration of pn junction properties.

  15. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  16. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  17. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    SciTech Connect

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  18. Progress Toward a Stabilization and Preconditioning Protocol for Polycrystalline Thin-Film Photovoltaic Modules

    SciTech Connect

    del Cueto, J. A.; Deline, C. A.; Rummel, S. R.; Anderberg, A.

    2010-08-01

    Cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules can exhibit substantial variation in measured performance depending on prior exposure history. This study examines the metastable performance changes in these PV modules with the goal of establishing standard preconditioning or stabilization exposure procedures to mitigate measured variations prior to current-voltage (IV) measurements.

  19. Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report

    SciTech Connect

    Trefny, J.U.; Mao, D.

    1998-01-01

    During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

  20. Polycrystalline thin film cadmium telluride n-i-p solar cells

    NASA Astrophysics Data System (ADS)

    Meyers, P. V.

    1990-06-01

    This paper discusses experiments and analyses of technical, economic and environmental issues relating to CdTe n-i-p solar cells and their potential to satisfy the DOE PV program goals. The basic cell structure is CdS-CdTe-ZnTe. Included is an experimental and theoretical study of the operation of these devices. Experiments related to deposition of the CdS and ZnTe layers, cascaded solar cells, and module fabrication are described. Manufacturing issues relating to costs, worker safety, and environmental security are discussed.

  1. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  2. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, Dimitrios C.; Fox, Richard J.

    1981-01-01

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  3. Cadmium telluride photovoltaic radiation detector

    DOEpatents

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  4. Applications of thin-film photovoltaics for space

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  5. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  6. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  7. Progress in polycrystalline thin-film solar cells

    SciTech Connect

    Zweibel, K; Hermann, A; Mitchell, R

    1983-07-01

    Photovoltaic devices based on several polycrystalline thin-film materials have reached near and above 10% sunlight-to-electricity conversion efficiencies. This paper examines the various polycrystalline thin-film PV materials including CuInSe/sub 2/ and CdTe in terms of their material properties, fabrication techniques, problems, and potentials.

  8. Recent technological advances in thin film solar cells

    SciTech Connect

    Ullal, H.S.; Zwelbel, K.; Surek, T.

    1990-03-01

    High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

  9. Cadmium telluride films on foreign substrates

    SciTech Connect

    Chu, T.L.; Chu, S.S.; Pauleau, Y.; Murthy, K.; Stokes, E.D.; Russell, P.E.

    1983-01-01

    Thin films of cadmium telluride have been deposited on mullite and tungsten-coated graphite substrates at 500--700 /sup 0/C by the direct combination of cadmium and tellurium in a hydrogen atmosphere. Their microstructure and crystallographic properties were studied. The importance of controlling the Cd/Te molar ratio in the reaction mixture to obtain nearly stoichiometric films was demonstrated. The electrical properties of nonstoichiometric and nearly stoichiometric films on mullite substrates were measured by the van der Pauw technique. Schottky barriers were used to measure the electrical properties of cadmium telluride films on W/graphite substrates. The effective intragrain minority carrier diffusion length in n-type films was measured by the scanned electron beam method using a Schottky barrier structure.

  10. Status of polycrystalline solar cell technologies

    NASA Astrophysics Data System (ADS)

    Kapur, Vijay K.; Basol, Bulent M.

    Thin-film cadmium telluride (CdTe) and thin-film copper indium diselenide (CIS) solar cells are discussed. The issues these technologies face before commercialization are addressed. High-efficiency (15-18 percent) polycrystalline silicon modules could dominate the market in the near future, and impressive results for thin-film CdTe and CIS solar cells and their outdoor stability can attract increased interest in these solar cells, which will accelerate their development.

  11. Polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, B. N.; Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

    1991-11-01

    Results and conclusions of Phase 1 of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe2 and CdTe solar cells. The kinetics of the formation of CuInSe2 by selenization with hydrogen selenide was investigated and a CuInSe2/Cds solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe2 films and a cell efficiency of 7 percent. Detailed investigations of the open circuit voltage of CuInSe2 solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe2 thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe2 is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10 percent can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm(exp 2) are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  12. The state of the art of thin-film photovoltaics

    SciTech Connect

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  13. Flexible polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Armstrong, J. H.; Lanning, B. R.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

    1993-01-01

    Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

  14. Polycrystalline Superconducting Thin Films: Texture Control and Critical Current Density

    NASA Astrophysics Data System (ADS)

    Yang, Feng

    1995-01-01

    The growth processes of polycrystalline rm YBa_2CU_3O_{7-X} (YBCO) and yttria-stabilized-zirconia (YSZ) thin films have been developed. The effectiveness of YSZ buffer layers on suppression of the reaction between YBCO thin films and metallic substrates was carefully studied. Grown on the chemically inert surfaces of YSZ buffer layers, YBCO thin films possessed good quality of c-axis alignment with the c axis parallel to the substrate normal, but without any preferred in-plane orientations. This leads to the existence of a large percentage of the high-angle grain boundaries in the YBCO films. The critical current densities (rm J_{c}'s) found in these films were much lower than those in single crystal YBCO thin films, which was the consequence of the weak -link effect of the high-angle grain boundaries in these films. It became clear that the in-plane alignment is vital for achieving high rm J_{c }s in polycrystalline YBCO thin films. To induce the in-plane alignment, ion beam-assisted deposition (IBAD) technique was integrated into the conventional pulsed laser deposition process for the growth of the YSZ buffer layers. It was demonstrated that using IBAD the in-plane orientations of the YSZ grains could be controlled within a certain range of a common direction. This ion -bombardment induced in-plane texturing was explained using the anisotropic sputtering yield theory. Our observations and analyses have provided valuable information on the optimization of the IBAD process, and shed light on the texturing mechanism in YSZ. With the in-plane aligned YSZ buffer layers, YBCO thin films grown on metallic substrates showed improved rm J_{c}s. It was found that the in-plane alignment of YSZ and that of YBCO were closely related. A direct correlation was revealed between the rm J_{c} value and the degree of the in-plane alignment for the YBCO thin films. To explain this correlation, a numerical model was applied to multi-grain superconducting paths with different

  15. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

    1998-02-03

    A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

  16. Fabrication of polycrystalline thin films by pulsed laser processing

    DOEpatents

    Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

    1998-02-03

    A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

  17. High-Efficiency Thin-Film Cadmium Telluride Photovoltaic Cells; Final Subcontract Report, Final Technical Report, 21 January 1994-31 March 1998

    SciTech Connect

    Compaan, A. D.; Bohn, R. G.

    1998-12-09

    This report describes work performed during the past year by The University of Toledo photovoltaics group. Researchers continued to develop rf sputtering for CdS/CdTe thin-film solar cells and to optimize the post-deposition process steps to match the characteristics of the sputtering process. During the fourth phase of the present contract, we focused on determining factors that limit the efficiency in our ''all-sputtered'' thin-film CdTe solar cells on soda-lime glass. These issues include controlling CdS/CdTe interdiffusion, understanding the properties of the CdS{sub x}Te{sub 1-x} alloy, optimizing process conditions for CdCl{sub 2} treatments, manipulating the influence of ion bombardment during rf sputtering, and understanding the role of copper in quenching photoluminescence and carrier lifetimes in CdTe. To better understand the important CdS/CdTe interdiffusion process, we have continued our collaboration with the University at Buffalo and Brookhaven National Synchrotron Light Source in measurements using grazing-incidence X-rays. Interdiffusion results in the formation of the ternary alloy material CdS{sub x}Te{sub 1-x} at or near the heterojunction, where its properties are critical to the operation of the solar cell. We have placed significant effort on characterizing this alloy, an effort begun in the last phase. A complete set of films spanning the alloy range, prepared by pulsed-laser deposition, has now been characterized by wavelength dispersive X-ray spectroscopy and optical absorption at NREL; by Raman scattering, X-ray diffraction, and electrical measurements in our lab; and by spectroscopic ellipsometry at Brooklyn College. We continued to participate in cooperative activity with the CdTe National Team. We prepared a series of depositions on borosilicate glass substrates having doped SnO{sub 2} layers coated with TiO{sub 2} (prepared by the University of South Florida and Harvard) and similar substrates having a resistive SnO{sub 2} layer on

  18. Controlled nanostructuration of polycrystalline tungsten thin films

    SciTech Connect

    Girault, B.; Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O.; Sauvage, T.

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  19. Polycrystalline organic thin film transistors for advanced chemical sensing

    NASA Astrophysics Data System (ADS)

    Torsi, Luisa; Tanese, Maria C.; Cioffi, Nicola; Sabbatini, Luigia; Zambonin, Pier G.

    2003-11-01

    Organic thin-film transistors have seen a dramatic improvement of their performance in the last decade. They have been also proposed as gas sensors. This paper deals with the interesting new aspects that polycrystalline based conducting polymer transistors present when operated as chemical sensors. Such devices are capable to deliver multi-parameter responses that are also extremely repeatable and fast at room temperature. Interesting are also the perspectives for their use as chemically selective devices in array type sensing systems.

  20. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly.

  1. Polycrystalline Thin Film Device Degradation Studies

    SciTech Connect

    Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H.; Davies, A.

    2005-11-01

    Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

  2. Dynamical electrophotoconductivity in polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.

    1982-01-01

    Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

  3. Advances in polycrystalline thin-film photovoltaics for space applications

    SciTech Connect

    Lanning, B.R.; Armstrong, J.H.; Misra, M.S.

    1994-09-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 eV and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not `reactor-specific` and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a `substrate configuration` by physical vapor deposition techniques and CdTe cells/modules are fabricated in a `superstrate configuration` by wet chemical methods.

  4. Advances in polycrystalline thin-film photovoltaics for space applications

    NASA Technical Reports Server (NTRS)

    Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

    1994-01-01

    Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

  5. Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride

    SciTech Connect

    Albin, D. S. Kuciauskas, D.; Ma, J.; Metzger, W. K.; Burst, J. M.; Moutinho, H. R.; Dippo, P. C.

    2014-03-03

    Low-temperature photoluminescence emission spectra were measured in cadmium telluride (CdTe) samples in which composition was varied to promote either Cd or Te-rich stoichiometry. The ability to monitor stoichiometry is important, since it has been shown to impact carrier recombination. Te-rich samples show transitions corresponding to acceptor-bound excitons (∼1.58 eV) and free-electron to acceptor transitions (∼1.547 eV). In addition to acceptor-bound excitons, Cd-rich samples show transitions assigned to donor-bound excitons (1.591 eV) and Te vacancies at 1.552 eV. Photoluminescence is a noninvasive way to monitor stoichiometric shifts induced by post-deposition anneals in polycrystalline CdTe thin films deposited by close-spaced sublimation.

  6. Laser processing for thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Compaan, Alvin D.

    1995-04-01

    Over the past decade major advances have occurred in the field of thin- film photovoltaics (PV) with many of them a direct consequence of the application of laser processing. Improved cell efficiencies have been achieved in crystalline and polycrystalline Si, in hydrogenated amorphous silicon, and in two polycrystalline thin-film materials. The use of lasers in photovoltaics includes laser hole drilling for emitter wrap-through, laser trenching for buried bus lines, and laser texturing of crystalline and polycrystalline Si cells. In thin-film devices, laser scribing is gaining increased importance for module interconnects. Pulsed laser recrystallization of boron-doped hydrogenated amorphous silicon is used to form highly conductive p-layers in p-i-n amorphous silicon cells and in thin-film transistors. Optical beam melting appears to be an attractive method for forming metal semiconductor alloys for contact formation. Finally, pulsed lasers are used for deposition of the entire semiconductor absorber layer in two types of polycrystalline thin-film cells-those based on copper indium diselenide and those based on cadmium telluride. In our lab we have prepared and studied heavily doped polycrystalline silicon thin films and also have used laser physical vapor deposition (LPVD) to prepare 'all-LPVD' CdS/CdTe solar cells on glass with efficiencies tested at NREL at 10.5%. LPVD is highly flexible and ideally suited for prototyping PV cells using ternary or quaternary alloys and for exploring new dopant combinations.

  7. Polycrystalline Cadmium Telluride Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Gessert, Timothy A.; Bonnet, Dieter

    2015-10-01

    The following sections are included: * Introduction * Brief history of CdTe PV devices * Initial attempts towards commercial modules * Review of present commercial industry/device designs * General CdTe material properties * Layer-specific process description for superstrate CdTe devices * Where is the junction? * Considerations for large-scale deployment * Conclusions * Acknowledgements * References

  8. Polycrystalline GeSn thin films on Si formed by alloy evaporation

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Fan, Wenjuan; Seo, Jung-Hun; Cho, Namki; Liu, Shih-Chia; Geng, Dalong; Liu, Yonghao; Gong, Shaoqin; Wang, Xudong; Zhou, Weidong; Ma, Zhenqiang

    2015-06-01

    Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

  9. Mercury Telluride and Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A semiconductor's usefulness is determined by how atoms are ordered within the crystal's underlying three-dimensional structure. While this mercury telluride and cadmium telluride alloy sample mixes completely in Earth -based laboratories, convective flows prevent them from mixing uniformly. In space, the ingredients mix more homogenously, resulting in a superior product.

  10. Resistive switching in polycrystalline YMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Bogusz, A.; Müller, A. D.; Blaschke, D.; Skorupa, I.; Bürger, D.; Scholz, A.; Schmidt, O. G.; Schmidt, H.

    2014-10-01

    We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

  11. Analysis of loss mechanisms in polycrystalline thin film solar cells

    NASA Astrophysics Data System (ADS)

    Sites, J. R.

    1990-08-01

    Our goal for thin-film polycrystalline solar cell analysis was to increase the useful information extracted from relatively straightforward electrical measurements. The strategy was to (1) systematize measurements and reporting, (2) organize results in terms of quantitative values for individual sources of current and voltage loss, and (3) evaluate possible analytical techniques to enhance precision and avoid pitfalls, and (4) insist on a viable physical explanation of each loss mechanism. Current-voltage, quantum efficiency, and capacitance measurements on CuInSe2 and CdTe solar cells from a variety of sources have been analyzed. In many cases losses were identified that may be lessened relatively easily. However, the operating voltage loss due to excessive forward recombination current throughout the depletion region remains the primary obstacle to efficiencies competitive with single crystal cells.

  12. Fundamentals of polycrystalline thin film materials and devices

    NASA Astrophysics Data System (ADS)

    Baron, Bill N.; Birkmire, Robert W.; Phillips, James E.; Shafarman, William N.; Hegedus, Steven S.; McCandless, Brian E.

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe2 and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe2 thin films and demonstrated a CuInSe2 solar cell with 7 percent efficiency. We added Ga, to increase the band gap of CuInSe2 devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed CuInGaSe2/CuInSe2 devices to demonstrate the potential for combining the benefits of higher V(sub oc) while retaining the current-generating capacity of CuInSe2. We fabricated an innovative superstrate device design with more than 5 percent efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe2 in an operational cell. The diffusion length was found to be greater than 1 micron. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe2 devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6 percent-efficient CdTe/CdS solar cell using physical vapor deposition.

  13. Fundamentals of polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1991-01-01

    This report presents the results of a one-year research program on polycrystalline thin-film solar cells. The research was conducted to better understand the limitations and potential of solar cells using CuInSe{sub 2} and CdTe by systematically investigating the fundamental relationships linking material processing, material properties, and device behavior. By selenizing Cu and In layers, we fabricated device-quality CuInSe{sub 2} thin films and demonstrated a CuInSe{sub 2} solar cell with 7% efficiency. We added Ga, to increase the band gap of CuInSe{sub 2} devices to increase the open-circuit voltage to 0.55 V. We fabricated and analyzed Cu(InGa)Se{sub 2}/CuInSe{sub 2} devices to demonstrate the potential for combining the benefits of higher V{sub oc} while retaining the current-generating capacity of CuInSe{sub 2}. We fabricated an innovative superstrate device design with more than 5% efficiency, as well as a bifacial spectral-response technique for determining the electron diffusion length and optical absorption coefficient of CuInSe{sub 2} in an operational cell. The diffusion length was found to be greater than 1 {mu}m. We qualitatively modeled the effect of reducing heat treatments in hydrogen and oxidizing treatments in air on the I-V behavior of CuInSe{sub 2} devices. We also investigated post-deposition heat treatments and chemical processing and used them to fabricate a 9.6%-efficient CdTe/CdS solar cell using physical vapor deposition.

  14. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  15. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    PubMed

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given. PMID:26266847

  16. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  17. Polycrystalline VO2 thin films via femtosecond laser processing of amorphous VO x

    NASA Astrophysics Data System (ADS)

    Charipar, N. A.; Kim, H.; Breckenfeld, E.; Charipar, K. M.; Mathews, S. A.; Piqué, A.

    2016-05-01

    Femtosecond laser processing of pulsed laser-deposited amorphous vanadium oxide thin films was investigated. Polycrystalline VO2 thin films were achieved by femtosecond laser processing in air at room temperature. The electrical transport properties, crystal structure, surface morphology, and optical properties were characterized. The laser-processed films exhibited a metal-insulator phase transition characteristic of VO2, thus presenting a pathway for the growth of crystalline vanadium dioxide films on low-temperature substrates.

  18. Research support for cadmium telluride crystal growth

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael

    1993-01-01

    Work performed during the period 11 Feb. 1992 to 10 Aug. 1993 on research support for cadmium telluride crystal growth is reported. Work on chemical impurity characterization and mass spectroscopy is described.

  19. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, Dean H.; Nelson, Art J.; Ahrenkiel, Richard K.

    1996-01-01

    A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.

  20. Polycrystalline ZnS(x)Se(1 - x) thin films deposited on ITO glass by MBE.

    PubMed

    Shen, Da-Ke; Sou, I K; Han, Gao-Rong; Du, Pi-Yi; Que, Duan-Lin

    2003-01-01

    MBE growth of ZnS(x)Se(1 - x) thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270 degrees C to 330 degrees C . The XRD theta/2theta spectra resulted from these films indicated that the as-grown polycrystalline ZnS(x)Se(1 - x) thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 degrees C. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnS(x)Se(1 - x) thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure. PMID:12659224

  1. Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen; Yu, Yonghao

    2016-08-01

    In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO2 thin film. SEM images revealed that all the VO2 thin films had crystallite sizes of below 20 nm, and similar configurations. UV-vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal-insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO2. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO2. Furthermore, a room temperature rutile VO2 thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO2 thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  2. Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

    SciTech Connect

    Do, Woori; Jin, Won-Beom; Choi, Jungwan; Bae, Seung-Muk; Kim, Hyoung-June; Kim, Byung-Kuk; Park, Seungho; Hwang, Jin-Ha

    2014-10-15

    Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.

  3. Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

    NASA Astrophysics Data System (ADS)

    Liang, Wei-Zheng; Ji, Yan-Da; Nan, Tian-Xiang; Huang, Jiang; Zeng, Hui-Zhong; Du, Hui; Chen, Chong-Lin; Lin, Yuan

    2012-06-01

    Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique. The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion. Crystal structures, surface morphologies, and dielectric performance were examined and compared for BTO thin films annealed under different temperatures. Correlations between the fabrication conditions, microstructures, and dielectric properties were discussed. BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with inr ~ 400 and tan δ < 0.025 at 100 kHz. The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

  4. Ferroelectric domain switching of individual nanoscale grains in polycrystalline lead zirconate titanate thin films

    NASA Astrophysics Data System (ADS)

    Jing, Yuanyuan

    2011-12-01

    This thesis will focus on the switching behavior of nanoscale ferroelectric domains in polycrystalline thin films. Ferroelectrics are a class of dielectric materials that demonstrate spontaneous polarizations under zero applied electric field. A region with the same polarization is called a ferroelectric domain. One important attribute of ferroelectrics is the domain switching from one thermodynamically stable state to another by application of an external electric field. Ferroelectric domain switching has been intensively investigated in epitaxial thin films. However, little is known about the domain switching in polycrystalline thin films. The main reason is that each grain is differently orientated and each is in a unique local stress and electric field determined by neighboring grains. To understand and deterministically control the nanoscale domain switching in polycrystalline thin films, it's critical to experimentally identify the effect of local microstructure (grain orientation and grain boundary misorientation) on the individual grain switching behavior. In this thesis, the effect of local microstructure on domain switching has been quantitatively analyzed in a 100 nm thick polycrystalline PbZr 0.2Ti0.8O3 thin film. The ferroelectric domains are characterized by Piezoresponse Force Microscopy (PFM), with their switching behavior analyzed by Polarization Difference Maps (PDMs, an analytical technique developed in this work). The local microstructure is determined by Electron Back Scattering Diffraction (EBSD). The results are discussed in chapter 3 to 6. Chapter 3 introduces the PDMs technique that enables the rapid identification of 0o, 90o switching and 180o switching in polycrystalline thin films. By assigning different colors to different types of switching, the full nature of polarization switching can be visualized simultaneously for large number of domains or grains in one map. In chapter 4, an external electric field reversal experiment has been

  5. Floating zone melting of cadmium telluride

    NASA Technical Reports Server (NTRS)

    Chang, Wen-Ming; Regel, L. L.; Wilcox, W. R.

    1992-01-01

    To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

  6. Amorphous silicon/polycrystalline thin film solar cells

    SciTech Connect

    Ullal, H.S.

    1991-03-13

    An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

  7. Room-temperature ferromagnetic and ferroelectric behavior in polycrystalline ZnO-based thin films

    NASA Astrophysics Data System (ADS)

    Lin, Yuan-Hua; Ying, Minghao; Li, Ming; Wang, Xiaohui; Nan, Ce-Wen

    2007-05-01

    Polycrystalline ZnO-based thin films with Li and/or Co doping have been prepared by a sol-gel spin-coating method on silicon substrates. Magnetization measurements reveal that Li-doped ZnO film shows paramagnetic behavior. However, the Co-doped ZnO thin films show obvious room-temperature ferromagnetic properties, and ferromagnetic properties can be enhanced by the Li codoping, which may be ascribed to indirect exchange via Li-related defects. All ZnO-based films exhibit ferroelectric behavior, and ferroelectric properties can be tuned by the dopants.

  8. Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method

    SciTech Connect

    Baba, T.; Matsuyama, T.; Sawada, T.; Takahama, T.; Wakisaka, K.; Tsuda, S.; Nakano, S.

    1994-12-31

    A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600 C, the world`s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 {micro}m thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure.

  9. Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

    NASA Astrophysics Data System (ADS)

    Ahn, Yoonho; Jang, Joonkyung; Son, Jong Yeog

    2016-03-01

    CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ˜9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  10. Structural, Optical, and Electrical Properties of Applied Amorphized and Polycrystalline Sb2S3 Thin Films

    NASA Astrophysics Data System (ADS)

    Janošević, Valentina; Mitrić, Miodrag; Savić, Jasmina; Validžić, Ivana Lj

    2016-03-01

    One of the intermediate steps in the organo-colloidal synthesis of crystalline Sb2S3 is a synthesis of spherical amorphous Sb2S3. In order to prove that the synthesized semiconductor can be considered an absorbing material for a solar device, the electronic and photovoltage properties of the amorphized and polycrystalline Sb2S3 thin films deposited by synthesized amorphous nanoparticles were studied. Optical studies revealed that the direct band gap energy was 1.65 eV and, two direct allowed transition of 1.57 and 1.91 eV for polycrystalline and amorphized thin films, respectively. The PL spectra of Sb2S3 showed an emission peak at 1.65 eV for both films. In order to obtain current-voltage ( I- V) characteristics, two cells based on the Sb2S3 thin films as both an absorbing material and an electrolyte were designed and made. The observed Sb2S3 thin films, with a thickness of around 10 μm, are of p-type. The exponential growth of the I- V curves reveals that the cells can work as a generator of electricity.

  11. Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact

    NASA Astrophysics Data System (ADS)

    Mount, Michael; Duarte, Fernanda; Paudel, Naba; Yan, Yanfa; Wang, Weining

    Cadmium Telluride (CdTe) solar cell is one of the most promising thin film solar cells and its highest efficiency has reached 21%. To keep improving the efficiency of CdTe solar cells, a few issues need to be addressed, one of which is the back contact. The back contact of CdTe solar cells are mostly Cu-base, and the problem with Cu-based back contact is that Cu diffuses into the grain boundary and into the CdS/CdTe junction, causing degradation problem at high temperature and under illumination. To continue improving the efficiency of CdTe/CdS solar cells, a good ohmic back contact with high work function and long term stability is needed. In this work, we report our studies on the potential of conducting polymer being used as the back contact of CdTe/CdS solar cells. Conducting polymers are good candidates because they have high work functions and high conductivities, are easy to process, and cost less, meeting all the requirements of a good ohmic back contact for CdTe. In our studies, we used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) with different conductivities and compared them with traditional Cu-based back contact. It was observed that the CdTe solar cell performance improves as the conductivity of the PEDOT:PSS increase, and the efficiency (9.1%) is approaching those with traditional Cu/Au back contact (12.5%). Cadmium Telluride Solar Cells with PEDOT:PSS Back Contact.

  12. Polycrystalline thin film materials and devices. Final subcontract report, 16 January 1990--15 January 1993

    SciTech Connect

    Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.; Yokimcus, T.A.

    1993-08-01

    This report describes results and conclusions of the final phase (III) of a three-year research program on polycrystalline thin-film heterojunction solar cells. The research consisted of the investigation of the relationships between processing, materials properties, and device performance. This relationship was quantified by device modeling and analysis. The analysis of thin-film polycrystalline heterojunction solar cells explains how minority-carrier recombination at the metallurgical interface and at grain boundaries can be greatly reduced by the proper doping of the window and absorber layers. Additional analysis and measurements show that the present solar cells are limited by the magnitude of the diode current, which appears to be caused by recombination in the space charge region. Developing an efficient commercial-scale process for fabricating large-area polycrystalline, thin-film solar cells from a research process requires a detailed understanding of the individual steps in making the solar cell, and their relationship to device performance and reliability. The complexities involved in characterizing a process are demonstrated with results from our research program on CuInSe{sub 2}, and CdTe processes.

  13. Process for producing cadmium sulfide on a cadmium telluride surface

    DOEpatents

    Levi, D.H.; Nelson, A.J.; Ahrenkiel, R.K.

    1996-07-30

    A process is described for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness. 12 figs.

  14. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  15. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  16. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    SciTech Connect

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  17. MIS and PN junction solar cells on thin-film polycrystalline silicon

    SciTech Connect

    Ariotedjo, A.; Emery, K.; Cheek, G.; Pierce, P.; Surek, T.

    1981-05-01

    The Photovoltaic Advanced Silicon (PVAS) Branch at the Solar Energy Research Institute (SERI) has initiated a comparative study to assess the potential of MIS-type solar cells for low-cost terrestrial photovoltaic systems in terms of performance, stability, and cost-effectiveness. Several types of MIS and SIS solar cells are included in the matrix study currently underway. This approach compares the results of MIS and p/n junction solar cells on essentially identical thin-film polycrystalline silicon materials. All cell measurements and characterizations are performed using uniform testing procedures developed in the Photovoltaic Measurements and Evaluation (PV M and E) Laboratory at SERI. Some preliminary data on the different cell structures on thin-film epitaxial silicon on metallurgical-grade substrates are presented here.

  18. Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Sreenivas Puli, Venkata; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Coondoo, Indrani; Panwar, Neeraj; Misra, Pankaj; Chrisey, Douglas B.; Scott, J. F.; Katiyar, Ram S.

    2014-02-01

    We report photovoltaic (PV) effect in multiferroic Bi0.9Sm0.1Fe0.95Co0.05O3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO3 (BFO) thin films have been deposited on Pt/TiO2/SiO2/Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (Voc) and the short-circuit current density (Jsc) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and -0.051 µA cm-2. Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour.

  19. Electron mobility in mercury cadmium telluride

    NASA Technical Reports Server (NTRS)

    Patterson, James D.

    1988-01-01

    A previously developed program, which includes all electronic interactions thought to be important, does not correctly predict the value of electron mobility in mercury cadmium telluride particularly near room temperature. Part of the reason for this discrepancy is thought to be the way screening is handled. It seems likely that there are a number of contributors to errors in the calculation. The objective is to survey the calculation, locate reasons for differences between experiment and calculation, and suggest improvements.

  20. Magnetization studies of first-order magnetostructural phase transition in polycrystalline FeRh thin films

    NASA Astrophysics Data System (ADS)

    Lu, Wei; Huang, Ping; Chen, Zhe; He, Chenchong; Wang, Yuxin; Yan, Biao

    2012-10-01

    The nucleation and growth of the transformed phase in the matrix of the original phase played an important role in the progress of magnetic transition. In spite of extensive investigations in B2 ordered FeRh alloy systems, until now few studies have been conducted for clarifying the nucleation and growth mechanism of the antiferromagnetic-ferromagnetic phase transition in FeRh alloys. In this work, B2 ordered polycrystalline FeRh thin films were fabricated on glass substrates by a sputtering technique and subsequent heat treatment. The as-deposited film shows a nonmagnetic property because of its face centred cubic structure. After annealing, the polycrystalline FeRh thin films show a clear first-order magnetostructural phase transition. The FeRh thin film shows an overall activation energy of about 228.6 kJ mol-1 for the entire first-order magnetostructural phase transition process. Results suggest that the first-order magnetostructural phase transition in ordered FeRh thin films follows the Johnson-Mehl-Avrami model with characteristic exponent n in the range 1-4, indicating that the phase transition process is a multi-step process characterized by different nucleation and growth mechanisms of the new ferromagnetic phase. The results obtained in this study will shed light on the underlying physics of the first-order magnetostructural phase transition of ordered FeRh alloys. The applicability of the concepts used in this study to the FeRh system shows universality and can be applied to other material systems where there is a first-order magnetostructural phase transition such as in manganites.

  1. FAST TRACK COMMUNICATION: Magnetic exchange hardening in polycrystalline GdN thin films

    NASA Astrophysics Data System (ADS)

    Senapati, K.; Fix, T.; Vickers, M. E.; Blamire, M. G.; Barber, Z. H.

    2010-08-01

    We report the observation of intrinsic exchange hardening in polycrystalline GdN thin films grown at room temperature by magnetron sputtering. We find, in addition to the ferromagnetic phase, that a fraction of GdN crystallizes in a structural polymorphic form which orders antiferromagnetically. The relative fraction of these two phases was controlled by varying the relative abundance of reactive species in the sputtering plasma by means of the sputtering power and N2 partial pressure. An exchange bias of ~ 30 Oe was observed at 10 K. The exchange coupling between the ferromagnetic and the antiferromagnetic phases resulted in an order of magnitude enhancement in the coercive field in these films.

  2. Efficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent anode

    NASA Astrophysics Data System (ADS)

    Zhu, X. L.; Sun, J. X.; Peng, H. J.; Meng, Z. G.; Wong, M.; Kwok, H. S.

    2005-08-01

    Polycrystalline silicon (p-Si) is a good material for the construction of thin-film transistors (TFT). It is used for fabricating active-matrix organic light-emitting diode (AMOLED) displays. In this letter, we propose and demonstrate the application of boron-doped p-Si as a semi-transparent anode in making different color OLEDs. Without removing the ultrathin native oxide on the p-Si surface and employing p-doped hole transport layer to enhance holes injection, these OLEDs show comparable or even better performance to conventional OLEDs which use ITO as anodes. The present technique has the advantage of less masking steps in making AMOLED.

  3. Structural and electrical properties of polycrystalline Bi(Fe0.6Mn0.4)O3 thin films

    NASA Astrophysics Data System (ADS)

    Kim, S. W.; Kim, W. J.; Lee, M. H.; Song, T. K.; Do, D.

    2013-12-01

    A 40% Mn-substituted BiFeO3 (BFMO) thin film was deposited on a Pt(111)/Ti/SiO2/Si(100) substrate by using a pulsed laser deposition method. The coexistence of rhombohedral and orthorhombic structures in the BFMO thin film was confirmed by using X-ray diffraction and Raman spectra investigation. The leakage current density of the BFMO thin film was larger than that of a pure polycrystalline BiFeO3 (BFO) thin film. In order to understand the leakage current behaviors, was investigated the leakage current mechanisms. The leakage current mechanism of the BFO thin film was found to be space-charge-limited conduction (SCLC), followed by trap-filled conduction causal by the increasing electric field strength. On the other hand, trap-filled conduction was not observed in the BFMO thin film. A leaky ferroelectric hysteresis loop was observed in the BFMO thin film, but not in the BFO thin film.

  4. Synthesis and characterization of polycrystalline semiconductor Caesium-Tin tri-Iodide thin-films

    NASA Astrophysics Data System (ADS)

    Chen, Zhuo

    This thesis deals with a virtually unexplored semiconductor material CsSnI3 from material synthesis, structural, optical, and electrical characterization to the fabrication and validation of CsSnI3 thin-film solar cells. We started with synthesizing CsSnI3 thin films based on CsI and SnCl2 (or SnI2) by using an apparatus which consists of e-beam and thermal evaporators. The quality of polycrystalline CsSnI3 thin-films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Experimental data on XRD and electron diffraction patterns taking from the synthesized thin-films match very well to the theoretically calculated ones based the first principles calculations, confirming that the synthesized CsSnI3 thin-films have an orthorhombic crystal structure. With the well-defined crystal structure, we theoretically studied the electronic band structure of CsSnI3. Extensive optical characterizations of CsSnI3 thin-films were then carried out revealing many extraordinary properties such as 1) direct band gap energy of 1.32 eV at 300 K with its abnormal temperature dependence, 2) extremely high photoluminescence quantum yield, 3) large exciton binding energy, and 4) strong two-phonon assisted excitonic absorption near band edge. These properties are interpreted in terms of the unique electronic and structural properties of CsSnI3. The value of 1.3 eV for the energy band gap of CsSnI3 suggests a unique application of CsSnI3 thin-films on solar cells. This is because this value is right in the small range of the optimal band gaps for the Shockley-Queisser maximum efficiency limit of a single-junction solar cell. A prototype Schottky solar cell was designed, fabricated, and validated. The measured power conversion efficiency (PCE) is 0.9 % which is presently limited by the series and shunt resistance. The improvement strategy on PCE is given at the end of my thesis. In order to make the CsSnI3 thin-film solar cells

  5. Brief review of cadmium telluride-based photovoltaic technologies

    NASA Astrophysics Data System (ADS)

    Başol, Bülent M.; McCandless, Brian

    2014-01-01

    Cadmium telluride (CdTe) is the most commercially successful thin-film photovoltaic technology. Development of CdTe as a solar cell material dates back to the early 1980s when ˜10% efficient devices were demonstrated. Implementation of better quality glass, more transparent conductive oxides, introduction of a high-resistivity transparent film under the CdS junction-partner, higher deposition temperatures, and improved Cl-treatment, doping, and contacting approaches yielded >16% efficient cells in the early 2000s. Around the same time period, use of a photoresist plug monolithic integration process facilitated the demonstration of the first 11% efficient module. The most dramatic advancements in CdTe device efficiencies were made during the 2013 to 2014 time frame when small-area cell conversion efficiency was raised to 20% range and a champion module efficiency of 17% was reported. CdTe technology is attractive in terms of its limited life-cycle greenhouse gas and heavy metal emissions, small carbon footprint, and short energy payback times. Limited Te availability is a challenge for the growth of this technology unless Te utilization rates are greatly enhanced along with device efficiencies.

  6. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  7. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Magnfält, D.; Fillon, A.; Boyd, R. D.; Helmersson, U.; Sarakinos, K.; Abadias, G.

    2016-02-01

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  8. Studies of polycrystalline pentacene thin-film transistors at the microscopic level

    NASA Astrophysics Data System (ADS)

    Cheng, Horng-Long; Chou, Wei-Yang; Kuo, Chia-Wei; Mai, Yu-Shen; Tang, Fu-Ching; Lai, Szu-Hao

    2006-08-01

    The electronic transport properties of polycrystalline pentacene-based thin film transistors (TFTs) were investigated at the microscopic level using microRaman spectroscopy. All the pentacene film, which were thermally evaporated as a layer with thickness of 70 nm, featured polycrystalline structure with only "thin film" phase polymorph and grain morphology as verified by x-ray diffraction (XRD) measurements. We have investigated the molecular vibrational modes of pentacene in the active channel during operations the organic TFT devices using in-situ Raman spectroscopy. Extra vibrational modes resulting from vibrational coupling effect in pentacene film were studied. The interlayer and intralayer intermolecular vibrational coupling energy was calculated from the Davydov splitting using a simple coupled-oscillator model. The results suggest that the C-H in-plane bending vibrational coupling energy of pentacene molecules in solid film is affected by operating device. Additionally, the aromatic C-C stretching vibrational modes also were investigated. However, it is rather difficult to obtain the variations of lattice parameters of pentacene film in a very small active channel by using electron diffraction and XRD. At the same time, MicroRaman technique provides the capability to explore the intermolecular coupling and molecular structure modifications.

  9. Suppressing light reflection from polycrystalline silicon thin films through surface texturing and silver nanostructures

    SciTech Connect

    Akhter, Perveen; Huang, Mengbing Kadakia, Nirag; Spratt, William; Malladi, Girish; Bakhru, Hassarum

    2014-09-21

    This work demonstrates a novel method combining ion implantation and silver nanostructures for suppressing light reflection from polycrystalline silicon thin films. Samples were implanted with 20-keV hydrogen ions to a dose of 10¹⁷/cm², and some of them received an additional argon ion implant to a dose of 5×10¹⁵ /cm² at an energy between 30 and 300 keV. Compared to the case with a single H implant, the processing involved both H and Ar implants and post-implantation annealing has created a much higher degree of surface texturing, leading to a more dramatic reduction of light reflection from polycrystalline Si films over a broadband range between 300 and 1200 nm, e.g., optical reflection from the air/Si interface in the AM1.5 sunlight condition decreasing from ~30% with an untextured surface to below 5% for a highly textured surface after post-implantation annealing at 1000°C. Formation of Ag nanostructures on these ion beam processed surfaces further reduces light reflection, and surface texturing is expected to have the benefit of diminishing light absorption losses within large-size (>100 nm) Ag nanoparticles, yielding an increased light trapping efficiency within Si as opposed to the case with Ag nanostructures on a smooth surface. A discussion of the effects of surface textures and Ag nanoparticles on light trapping within Si thin films is also presented with the aid of computer simulations.

  10. Thin film photovoltaics

    SciTech Connect

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  11. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  12. Impact of universal mobility law on polycrystalline organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Raja, Munira; Donaghy, David; Myers, Robert; Eccleston, Bill

    2012-10-01

    We have developed novel analytical models for polycrystalline organic thin-film transistor (OTFT) by employing new concepts on the charge carrier injection to polysilicon thin-films. The models, also incorporate the effect of contact resistance associated with the poor ohmic nature of the contacts. The drain current equations of the OTFT, both in the quasi-diffusion and quasi-drift regimes, predict temperature dependencies on essential material and device parameters. Interestingly, under the drift regime, the polycrystalline OTFT model reveals similar power dependencies on the applied voltages, to those of purely disordered model developed by utilizing the universal mobility law (UML). Such similarities are not thought to be coincidental since the effect of gate voltage on surface potential is influenced by the Fermi level pinning in the grain boundary. Nonetheless, the best fits on the data of 6,13-bis(tri-isopropylsilylethynyl) OTFTs are attained with the proposed polycrystalline rather than the disordered model, particularly at low gate voltages where the diffusive component is dominant. Moreover, in order to understand the effect of grain boundaries, we devise a relationship for the dependency of the effective mobility on carrier concentration, assuming a crystalline region to be in direct contact with a disordered region. Interestingly, we find a similar dependency as the UML in purely disordered materials, which further signifies the conduction to be limited by the grain boundaries. Subsequently, an analytical model for the variation of the effective mobility with gate voltage is established. Such models are vital in assisting the development of more accurate designs of the novel organic circuits.

  13. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  14. Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

    SciTech Connect

    Kumar, Avishek E-mail: dalapatig@imre.a-star.edu.sg; Law, Felix; Widenborg, Per I.; Dalapati, Goutam K. E-mail: dalapatig@imre.a-star.edu.sg; Subramanian, Gomathy S.; Tan, Hui R.; Aberle, Armin G.

    2014-11-01

    n-type polycrystalline silicon (poly-Si) films with very large grains, exceeding 30 μm in width, and with high Hall mobility of about 71.5 cm{sup 2}/V s are successfully prepared by the solid-phase crystallization technique on glass through the control of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The effect of this gas flow ratio on the electronic and structural quality of the n-type poly-Si thin film is systematically investigated using Hall effect measurements, Raman microscopy, and electron backscatter diffraction (EBSD), respectively. The poly-Si grains are found to be randomly oriented, whereby the average area weighted grain size is found to increase from 4.3 to 18 μm with increase of the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio. The stress in the poly-Si thin films is found to increase above 900 MPa when the PH{sub 3} (2% in H{sub 2})/SiH{sub 4} gas flow ratio is increased from 0.025 to 0.45. Finally, high-resolution transmission electron microscopy, high angle annular dark field-scanning tunneling microscopy, and EBSD are used to identify the defects and dislocations caused by the stress in the fabricated poly-Si films.

  15. Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications

    SciTech Connect

    Nomura, Masahiro; Kage, Yuta; Müller, David; Moser, Dominik; Paul, Oliver

    2015-06-01

    Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped sample seems to result from the strong phonon scattering by heavy phosphorus atoms at the grain boundaries.

  16. Thin film polycrystalline silicon: Promise and problems in displays and solar cells

    SciTech Connect

    Fonash, S.J.

    1995-08-01

    Thin film polycrystalline Si (poly-Si) with its carrier mobilities, potentially good stability, low intragrain defect density, compatibility with silicon processing, and ease of doping activation is an interesting material for {open_quotes}macroelectronics{close_quotes} applications such as TFTs for displays and solar cells. The poly-Si films needed for these applications can be ultra-thin-in the 500{Angstrom} to 1000{Angstrom} thickness range for flat panel display TFTs and in the 4{mu}m to 10{mu}m thickness range for solar cells. Because the films needed for these microelectronics applications can be so thin, an effective approach to producing the films is that of crystallizing a-Si precursor material. Unlike cast materials, poly-Si films made this way can be produced using low temperature processing. Unlike deposited poly-Si films, these crystallized poly-Si films can have grain widths that are much larger than the film thickness and almost atomically smooth surfaces. This thin film poly-Si crystallized from a-Si precursor films, and its promise and problems for TFTs and solar cells, is the focus of this discussion.

  17. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    NASA Astrophysics Data System (ADS)

    Canulescu, S.; Borca, C. N.; Rechendorff, K.; Davidsdóttir, S.; Pagh Almtoft, K.; Nielsen, L. P.; Schou, J.

    2016-04-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti content. X-ray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as anti-site effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square root of the electrical resistivity.

  18. Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes

    SciTech Connect

    Zhao, G.; Charlson, E.M.; Charlson, E.J.; Stacy, T.; Meese, J.M. ); Popovici, G.; Prelas, M. )

    1993-02-15

    Schottky diodes utilized for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament-assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode, whereas the effect on the reverse biased characteristics was relatively small. This stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects that dominated the diode current-voltage characteristics in the small and large bias regions, respectively. At a large constant forward bias current, a good linear relationship between output voltage and applied force was observed for force of less than 10 N, as predicted by the piezoresistance effect. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. Compared to either silicon or germanium junction diodes and tunnel diodes, polycrystalline diamond Schottky diodes not only are very stress sensitive but also have good linearity. This study shows polycrystalline diamond Schottky diodes have potential as mechanical sensors.

  19. Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

    A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

  20. Broadening of optical transitions in polycrystalline CdS and CdTe thin films

    SciTech Connect

    Li Jian; Chen Jie; Collins, R. W.

    2010-11-01

    The dielectric functions {epsilon} of polycrystalline CdS and CdTe thin films sputter deposited onto Si wafers were measured from 0.75 to 6.5 eV by in situ spectroscopic ellipsometry. Differences in {epsilon} due to processing variations are well understood using an excited carrier scattering model. For each sample, a carrier mean free path {lambda} is defined that is found to be inversely proportional to the broadening of each of the band structure critical points (CPs) deduced from {epsilon}. The rate at which broadening occurs with {lambda}{sup -1} is different for each CP, enabling a carrier group speed {upsilon}{sub g} to be identified for the CP. With the database for {upsilon}{sub g}, {epsilon} can be analyzed to evaluate the quality of materials used in CdS/CdTe photovoltaic heterojunctions.

  1. Energy loss of protons and deuterons at low energies in Pd polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Celedón, C.; Sánchez, E. A.; Moreno, M. S.; Arista, N. R.; Uribe, J. D.; Mery, M.; Valdés, J. E.; Vargas, P.

    2013-07-01

    We have investigated experimentally and by computer simulations the energy-loss distributions of low-energy (E<10 keV) protons and deuterons transmitted through polycrystalline palladium thin films. In contrast to previous experiments on various transition metals we find that the stopping power of Pd is proportional to the ion velocity. Data of protons and deuterons are coincident within the experimental uncertainties, showing the absence of an isotopic effect on the stopping power of Pd in this energy range. The experimental results were analyzed and compared with Monte Carlo computer simulations and previous theoretical models. The difference in the velocity dependence of the energy loss of hydrogen ions in Pd with respect to other transition metals (Cu, Ag, and Au) is explained by a theoretical analysis based on the properties of the d-electron bands of those elements.

  2. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  3. Advances in thin-film solar cells for lightweight space photovoltaic power

    SciTech Connect

    Landis, G.A.; Bailey, S.G.; Flood, D.J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  4. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors

    NASA Astrophysics Data System (ADS)

    Chen, Bin; Li, Mi; Liu, Yiwei; Zuo, Zhenghu; Zhuge, Fei; Zhan, Qing-Feng; Li, Run-Wei

    2011-05-01

    We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett. 95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450 µW cm - 2 and zero bias, the corresponding photocurrent varies from 0.2 to 200 pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices.

  5. Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films

    NASA Astrophysics Data System (ADS)

    Hatty, V.; Kahn, H.; Trevino, J.; Zorman, C. A.; Mehregany, M.; Ballarini, R.; Heuer, A. H.

    2006-01-01

    The fracture toughness of thin-film polycrystalline silicon carbide (poly-SiC) deposited on silicon (Si) wafers via low-pressure chemical-vapor deposition (LPCVD) has been measured on a scale useful for micromachined devices; the results are compared to previous studies on poly-SiC thin films deposited by atmospheric pressure chemical-vapor deposition (APCVD) [Bellante et al., Appl. Phys. Lett. 86, 071920 (2005)]. Samples in this study included those with and without silicon dioxide (SiO2) sacrificial release layers. The LPCVD processing technique induces residual tensile stresses in the films. Doubly clamped microtensile specimens were fabricated using standard micromachining processes, and microindentation was used to initiate atomically sharp precracks. The residual stresses in the films create stress intensity factors K at the crack tips; upon release, the precracks whose K exceeded a critical value, KIC, propagated to failure. The fracture toughness KIC was the same for both types of devices, 2.9+/-0.2 MPa m1/2 for the SiC on Si samples and 3.0+/-0.2 MPa m1/2 for the SiC on SiO2/Si samples, and similar to that found for APCVD poly-SiC, 2.8<=KIC<=3.4 MPa m1/2 [Bellante et al., Appl. Phys. Lett. 86, 071920 (2005)], indicating that KIC is truly a structure-insensitive material property. The fracture toughness of poly-SiC compares favorably with that for polysilicon, 0.85+/-0.05 MPa m1/2 [Kahn et al., Science 298, 1215 (2002)].

  6. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    NASA Astrophysics Data System (ADS)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-07-01

    Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using µ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  7. High-performance p-channel polycrystalline-germanium thin-film transistors via excimer laser crystallization and counter doping

    NASA Astrophysics Data System (ADS)

    Liao, Chan-Yu; Huang, Ching-Yu; Huang, Ming-Hui; Chou, Chia-Hsin; Cheng, Huang-Chung

    2016-04-01

    High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large as 1 µm were achieved by ELC at 300 mJ/cm2. Meanwhile, the defect-generated hole concentrations in Ge thin films were significantly reduced. Furthermore, the majority carriers could then be converted to n-type by counter doping (CD) with a suitable dose. Then, high-performance p-channel Ge thin-film transistors (TFTs) with a high on/off current ratio of up to 1.7 × 103 and a high field-effect mobility of up to 208 cm2 V-1 s-1 were demonstrated for a channel width and length both of 0.5 µm. It was revealed that ELC combined with CD is effective for attaining high-performance p-channel poly-Ge TFTs.

  8. Improved ferroelectric property and domain structure of highly a-oriented polycrystalline CaBi2Nb2O9 thin film

    NASA Astrophysics Data System (ADS)

    Ahn, Yoonho; Son, Jong Yeog

    2015-12-01

    A Lead-free ferroelectric CaBi2Nb2O9 (CBNO) thin film was deposited on Si substrate by pulsed laser deposition. TiO2 buffer layer was employed and Pt electrode was used for nano-scale capacitor. The x-ray diffraction reveals that the CBNO thin film has highly a-oriented polycrystalline structure. The highly a-oriented polycrystalline CBNO thin film significantly exhibit the enhanced ferroelectric property with a remnant polarization of 10 μC/cm2 compared to other values reported previously. In particular, the highly a-oriented polycrystalline CBNO thin film show faster ferroelectric switching characteristics than the epitaxially c-oriented CBNO thin film.

  9. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  10. The DOE/SERI polycrystalline thin-film solar cell program

    NASA Astrophysics Data System (ADS)

    Zweibel, K.; Ullal, H.; Mitchell, R.

    Research and development work in copper indium diselenide (CuInSe2) and cadmium telluride (CdTe) technologies is reported. Devices produced from these materials have strong potential in photovoltaics because of their low cost, resonable efficiency, and stablity. Some of the major recent accomplishments of the program are (1) the achievement of 10.5 percent efficiency with a CdTe device; (2) an improvement in the efficiency of selenized CuInSe2 cells to nearly 8 percent; (3) the development of a transparent contact to CdTe cells for possible use in the top cell of a tandem structure; (4) the achievement of a 10.2-percent-efficient Cu(Ga,In)Se cell; and (5) the fabrication of a 9.6-percent-efficient 91-sq-cm CuInSe2 submodule. Directions and plans for future work are indicated.

  11. 1 Tbit/in.2 Very-High-Density Recording in Mass-Productive Polycrystalline Ferroelectric Thin Film Media

    NASA Astrophysics Data System (ADS)

    Fujimoto, Kenjiro; Kawano, Takahiro; Onoe, Atsushi; Tamura, Masahiro; Umeda, Masaru; Toda, Masayuki

    2009-07-01

    We demonstrate very-high-density ferroelectric recording experiments of 1 Tbit/in.2 in polycrystalline Pb(Zr,Ti)O3 (PZT) thin film for the first time. A high-quality polycrystalline PZT thin film was successfully deposited on a silicon substrate with a SrRuO3 (SRO) electrode by metal-organic chemical vapor deposition (MOCVD). The roughness of the PZT film was reduced to less than 1 nm by chemical mechanical polishing (CMP). The PZT film has very high controllability for domain inversion. Our fabrication process also enables high productivity. Therefore, our PZT film has potential to be a mass-productive ferroelectric recording medium for high-density storage systems.

  12. Polycrystalline SrFe12O19 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Garcia, Tupac; de Posada, E.; Jimenez, Ernesto; Sanchez Ll., J. L.; Diaz Castanon, S.; Bartolo-Perez, Pascual; Cauich, W.; Oliva, I.; Pena, J. L.; Ceh, O.

    1999-07-01

    Polycrystalline SrFe12O19 thin films were deposited on Si (100) substrates by PLD using a Nd-YAG laser ((lambda) equals 1064 nm). During the deposition process substrates were kept at room temperature. As-deposited films were annealed in air at temperatures between 600 degree(s)C and 840 degree(s)C. Samples were characterized by AES, ESCA, SEM, AFM, x-ray diffraction and VSM. It is presented the relevance of the preparation of the target surface on the film quality. Some differences in the chemical composition of as-deposited films, compared with the target and the annealed films, were observed. The x-ray diffraction spectra show a textured as- deposited films. Samples annealed at 600 degree(s)C, and below, showed a very weak magnetic response. In contrast annealing in the temperature range 700 degree(s)C - 840 degree(s)C led to the formation of a nanocrystalline particle system (average particle size 150 - 350 nm) which behave as a single domain in the thermally demagnetized state. The obtained coercivities (5750 - 6850 Oe) are among the highest values reported for films, powders and sintered samples.

  13. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  14. A thin-film polycrystalline photoelectrochemical cell with 8% solar conversion efficiency

    NASA Astrophysics Data System (ADS)

    Hodes, G.

    1980-05-01

    A thin-film polycrystalline CdSe(0.65)Te(0.35)/polysulfide-based photoelectrochemical solar cell with an energy conversion efficiency of up to 8% is presented. Cell electrodes were prepared by painting a slurry of sintered CdSe(0.65)Te(0.35) powder onto a Ti substrate and then annealing in an inert atmosphere and etching by various means. Solar efficiencies of the electrodes immersed in an aqueous electrolyte 1 M in KOH, Na2S and S with a counter electrode of sulfide brass gauze of up to 5% were obtained following a HCl:HNO3 etch, up to 5.5% following etching in dilute aqueous CrO3 and up to 8.0% following photoetching and K2CrO4 treatment. The spectral response of the anode in polysulfide solution exhibits a short-wavelength cutoff due to electrolyte absorption, a flat plateau region, and a fairly sharp long-wavelength cut-off indicating an effective band gap of about 1.45 eV, similar to that of CdTe. Output stability has been found to decrease with increasing output current, remaining stable for more than 21 h at a current of 20 mA/sq cm.

  15. Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

    NASA Astrophysics Data System (ADS)

    Hong, Won-Eui; Ro, Jae-Sang

    2015-01-01

    Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films is carried out by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. Arc instability, however, is observed during crystallization, and is attributed to dielectric breakdown in the conductor/insulator/transformed polycrystalline silicon (poly-Si) sandwich structures at high temperatures during electrical pulsing for crystallization. In this study, we devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. The Mo layer was used as a Joule-heat source for the crystallization of pre-patterned active islands of a-Si films. JIC-processed poly-Si thin-film transistors (TFTs) were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.

  16. Synthesis and characterization of ordered and disordered polycrystalline La2NiMnO6 thin films by sol-gel.

    PubMed

    Zhang, Zhiqing; Jian, Hongbin; Tang, Xianwu; Yang, Jie; Zhu, Xuebin; Sun, Yuping

    2012-10-14

    Polycrystalline La(2)NiMnO(6) thin films are prepared on Pt/Ti/SiO(2)/Si substrates by the sol-gel method. Through controlling the processing parameters, the cation ordering can be tuned. The disordered and ordered thin films exhibit distinct differences for crystal structures as well as properties. The crystal structure at room temperature characterized by X-ray diffraction and Raman spectra is suggested to be monoclinic (P2(1)/n) and orthorhombic (Pbnm) for the ordered and disordered thin films, respectively. The ferromagnetic-paramagnetic transition is 263 K and 60 K for the ordered and disordered samples respectively, whereas the saturation magnetic moment at 5 K is 4.9 μ(B) fu(-1) (fu = formula unit) and 0.9 μ(B) fu(-1). The dielectric constant as well as magnetodielectric effect is higher for the ordered La(2)NiMnO(6) thin films. The magnetodielectric effect for the ordered thin film is dominantly contributed to the intrinsic coupling of electric dipole ordering and fluctuations and magnetic ordering and fluctuations, while it is mainly contributed to Maxwell-Wagner (M-W) effects for the disordered thin film. The successful achievements of ordered and disordered polycrystalline La(2)NiMnO(6) thin films will provide an effective route to fabricate double-perovskite polycrystalline thin films by the sol-gel method. PMID:22910689

  17. Organic solar cells based on liquid crystalline and polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Yoo, Seunghyup

    This dissertation describes the study of organic thin-film solar cells in pursuit of affordable, renewable, and environmentally-friendly energy sources. Particular emphasis is given to the molecular ordering found in liquid crystalline or polycrystalline films as a way to leverage the efficiencies of these types of cells. Maximum efficiencies estimated based on excitonic character of organic solar cells show power conversion efficiencies larger than 10% are possible in principle. However, their performance is often limited due to small exciton diffusion lengths and poor transport properties which may be attributed to the amorphous nature of most organic semiconductors. Discotic liquid crystal (DLC) copper phthalocyanine was investigated as an easily processible building block for solar cells in which ordered molecular arrangements are enabled by a self-organization in its mesophases. An increase in photocurrent and a reduction in series resistance have been observed in a cell which underwent an annealing process. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements suggest that structural and morphological changes induced after the annealing process are related to these improvements. In an alternative approach, p-type pentacene thin films prepared by physical vapor deposition were incorporated into heterojunction solar cells with C60 as n-type layers. Power conversion efficiencies of 2.7% under broadband illumination (350--900 nm) with a peak external quantum efficiency of 58% have been achieved with the broad spectral coverage across the visible spectrum. Analysis using an exciton diffusion model shows this efficient carrier generation is mainly due to the large exciton diffusion length of pentacene films. Joint XRD and AFM studies reveal that the highly crystalline nature of pentacene films can account for the observed large exciton diffusion length. In addition, the electrical characteristics are studied as a function of light intensity using

  18. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  19. Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Dhaka, M. S.

    2016-06-01

    A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150-350 °C. These films were subjected to the XRD, UV-Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48-1.64 eV and observed to decrease with thermal annealing. The current-voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.

  20. Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)

    SciTech Connect

    Not Available

    2013-08-01

    First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

  1. Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping.

    PubMed

    Aebersold, A Brian; Alexander, Duncan T L; Hébert, Cécile

    2015-12-01

    A method is presented for the quantitative investigation of microstructure and texture evolution in polycrystalline thin films based on in-plane automated crystal orientation mapping in transmission electron microscopy, from the substrate up. To demonstrate the method we apply it to the example of low pressure metal-organic chemical vapor deposited ZnO layers. First, orientation mapping is applied to standard cross-section and plan-view transmission electron microscopy samples of films, illustrating how plan-view samples both reduce the occurrence of grain overlap that is detrimental to reliable orientation mapping and also improve sampling statistics compared to cross-sections. Motivated by this, orientation mapping has been combined with a double-wedge method for specimen preparation developed by Spiecker et al. (2007) [1], which creates a large area plan-view sample that traverses the film thickness. By measuring >10,000 grains in the film, the resulting data give access to grain size, orientation and misorientation distributions in function of height above the substrate within the film, which are, in turn, the inputs necessary for quantitative assessment of growth models and simulations. The orientation data are directly related to microstructural images, allowing correlation of orientations with in-plane and out-of-plane grain sizes and shapes. The spatial correlation of the entire data set gives insights into previously unnoticed growth mechanisms such as the presence of renucleation or preferred misorientations. Finally, the data set can be used to guide targeted, local studies by other transmission electron microscopy techniques. This is demonstrated by the site-specific application of nano-beam diffraction to validate the presence of coherent [21̄1̄0]/(011̄3) twin boundaries first suggested by the orientation mapping. PMID:26363209

  2. Elastic properties of supported polycrystalline thin films and multilayers: An X-ray diffraction study

    SciTech Connect

    Goudeau, P.; Villain, P.; Tamura, N.; Renault, P.-O.; Badawi, K.F.; Padmore, H.A.

    2003-08-13

    Numerous experimental and theoretical studies have shown that thin film elastic behavior may be different from the bulk one due to size effects related to grain boundaries, free surfaces and interfaces. In addition, thin films often present high compressive residual stresses which may be responsible of thin film buckling. These two features will be discussed in this communication through recent x-ray diffraction experiments: in situ tensile testing for elastic constant analysis and scanning x-ray micro diffraction for stress relaxation measurements associated with film buckling.

  3. Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)

    SciTech Connect

    von Roedern, B.; Ullal, H.; Zweibel, K.

    2006-05-01

    The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

  4. Role of Polycrystalline Thin-Film PV Technologies in Competitive PV Module Markets: Preprint

    SciTech Connect

    von Roedern, B.; Ullal, H. S.

    2008-05-01

    This paper discusses the developments in thin-film PV technologies and provides an outlook on future commercial module efficiencies achievable based on today's knowledge about champion cell performance.

  5. Ambient condition laser writing of graphene structures on polycrystalline SiC thin film deposited on Si wafer

    SciTech Connect

    Yue, Naili; Zhang, Yong; Tsu, Raphael

    2013-02-18

    We report laser induced local conversion of polycrystalline SiC thin-films grown on Si wafers into multi-layer graphene, a process compatible with the Si based microelectronic technologies. The conversion can be achieved using a 532 nm CW laser with as little as 10 mW power, yielding {approx}1 {mu}m graphene discs without any mask. The conversion conditions are found to vary with the crystallinity of the film. More interestingly, the internal structure of the graphene disc, probed by Raman imaging, can be tuned with varying the film and illumination parameters, resembling either the fundamental or doughnut mode of a laser beam.

  6. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1991-11-01

    Results and conclusion of Phase I of a multi-year research program on polycrystalline thin film solar cells are presented. The research comprised investigation of the relationships among processing, materials properties and device performance of both CuInSe{sub 2} and CdTe solar cells. The kinetics of the formation of CuInSe{sub 2} by selenization with hydrogen selenide was investigated and a CuInSe{sub 2}/CdS solar cell was fabricated. An alternative process involving the reaction of deposited copper-indium-selenium layers was used to obtain single phase CuInSe{sub 2} films and a cell efficiency of 7%. Detailed investigations of the open circuit voltage of CuInSe{sub 2} solar cells showed that a simple Shockley-Read-Hall recombination mechanism can not account for the limitations in open circuit voltage. Examination of the influence of CuInSe{sub 2} thickness on cell performance indicated that the back contact behavior has a significant effect when the CuInSe{sub 2} is less than 1 micron thick. CdTe/CdS solar cells with efficiencies approaching 10% can be repeatedly fabricated using physical vapor deposition and serial post deposition processing. The absence of moisture during post deposition was found to be critical. Improvements in short circuit current of CdTe solar cells to levels approaching 25 mA/cm{sup 2} are achievable by making the CdS window layer thinner. Further reductions in the CdS window layer thickness are presently limited by interdiffusion between the CdS and the CdTe. CdTe/CdS cells stored without protection from the atmosphere were found to degrade. The degradation was attributed to the metal contact. CdTe cells with ZnTe:Cu contacts to the CdTe were found to be more stable than cells with metal contacts. Analysis of current-voltage and spectral response of CdTe/CdS cells indicates the cell operates as a p-n heterojunction with the diode current dominated by SRH recombination in the junction region of the CdTe.

  7. Nanophotonic light trapping in polycrystalline silicon thin-film solar cells using periodically nanoimprint-structured glass substrates

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Xavier, Jolly; Preidel, Veit; Wyss, Philippe; Sontheimer, Tobias; Rech, Bernd; Probst, Jürgen; Hülsen, Christoph; Löchel, Bernd; Erko, Alexei; Burger, Sven; Schmidt, Frank; Back, Franziska; Rudigier-Voigt, Eveline

    2013-09-01

    A smart light trapping scheme is essential to tap the full potential of polycrystalline silicon (poly-Si) thin-film solar cells. Periodic nanophotonic structures are of particular interest as they allow to substantially surpass the Lambertian limit from ray optics in selected spectral ranges. We use nanoimprint-lithography for the periodic patterning of sol-gel coated glass substrates, ensuring a cost-effective, large-area production of thin-film solar cell devices. Periodic crystalline silicon nanoarchitectures are prepared on these textured substrates by high-rate silicon film evaporation, solid phase crystallization and chemical etching. Poly-Si microhole arrays in square lattice geometry with an effective thickness of about 2μm and with comparatively large pitch (2 μm) exhibit a large absorption enhancement (A900nm = 52%) compared to a planar film (A900nm ~ 7%). For the optimization of light trapping in the desired spectral region, the geometry of the nanophotonic structures with varying pitch from 600 nm to 800 nm is tailored and investigated for the cases of poly-Si nanopillar arrays of hexagonal lattice geometry, exhibiting an increase in absorption in comparison to planar film attributed to nanophotonic wave optic effects. These structures inspire the design of prospective applications such as highly-efficient nanostructured poly-Si thin-film solar cells and large-area photonic crystals.

  8. Optical properties of vacuum evaporated Cd xSn 1-xSe polycrystalline thin films: influence of composition and thickness

    NASA Astrophysics Data System (ADS)

    Padiyan, D. Pathinettam; Marikani, A.; Murali, K. R.

    2005-03-01

    Polycrystalline Cd xSn 1-xSe material is synthesized by melt growth technique for various x values and thin films are prepared by vacuum evaporation technique. Optical transmittance measurements have been made on thin films of Cd xSn 1-xSe, with x=0,0.3,0.75 and 1 for various thicknesses. The studies reveal that these thin films have a direct allowed band gap energy and the indirect band gap energy is improbable. The band gap energy increases with decrease in thickness in all the compositions and it is attributed to the quantum size effect.

  9. Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel

    NASA Astrophysics Data System (ADS)

    Byun, Chang Woo; Son, Se Wan; Lee, Yong Woo; Hyo Park, Jae; Vakilipour Takaloo, Ashkan; Joo, Seung Ki

    2013-10-01

    The electrical performance of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) is greatly affected by metal catalyst contaminations, such as Ni and Ni silicide trapped in the channel, since they concentrate in front of laterally grown crystallites. In the present work, the effect of the MILC/MILC boundary (MMB) on MILC polycrystalline silicon (poly-Si) TFTs is investigated by the comparison of MILC poly-Si TFTs with MMB at the center of the channel, and equivalent TFTs with MMB at a position ejected from the channel. The MMB location was controlled by the Ni catalyst position. Both a low off-state leakage current and a free from short channel effect (kink effect) were observed in high electric-field conditions. Furthermore, the field-effect mobility and drain current noise were drastically improved by ejecting the MILC boundary in the source direction.

  10. Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

    PubMed Central

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10. The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing

  11. Spectral analysis of the effects of 1.7 MeV electron irradiation on the current transfer characteristic of cadmium telluride solar cells.

    PubMed

    Tian, Jin-Xiu; Zeng, Guang-Gen; He, Xu-Lin; Zhang, Jing-Quan; Wu, Li-Li; Li, Wei; Li, Bing; Wang, Wen-Wu; Feng, Liang-Huan

    2014-04-01

    The effects of device performance of 1.7 MeV electron irradiation on cadmium telluride polycrystalline thin film solar cells with the structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe : Cu/Ni have been studied. Light and dark I-V characteristics, dark C-V characteristics, quantum efficiency (QE), admittance spectrum (AS) and other testing methods were used to analyze cells performance such as the open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF) and conversion efficiency (eta). It was explored to find out the effects of irradiation on the current transfer characteristic of solar cells combined with the dark current density (Jo), diode ideal factor (A), quantum efficiency, carrier concentration and the depletion layer width. The decline in short-circuit current was very large and the efficiency of solar cells decreased obviously after irradiation. Reverse saturation current density increased, which indicates that p-n junction characteristics of solar cells were damaged, and diode ideal factor was almost the same, so current transport mechanism of solar cells has not changed. Quantum efficiency curves proved that the damage of solar cells' p-n junction influenced the collection of photo-generated carriers. Irradiation made carrier concentration reduce to 40.6%. The analyses have shown that. A new defect was induced by electron irradiation, whose position is close to 0.58 eV above the valence band in the forbidden band, and capture cross section is 1.78 x 10(-16) cm2. These results indicate that irradiation influences the generation of photo-generated carriers, increases the risk of the carrier recombination and the reverse dark current, and eventually makes the short-circuit current of solar cells decay. PMID:25007593

  12. Transient Response of Cadmium Telluride Modules to Light Exposure: Preprint

    SciTech Connect

    Deline, C.; del Cueto, J.; Albin, D. S.; Petersen, C.; Tyler, L.; TamizhMani, G.

    2011-07-01

    Commercial cadmium telluride (CdTe) photovoltaic (PV) modules from three different manufacturers were monitored for performance changes during indoor and outdoor light-exposure. Short-term transients in Voc were recorded on some modules, with characteristic times of ~1.1 hours. Outdoor performance data shows a similar drop in Voc after early morning light exposure. Preliminary analysis of FF changes show light-induced changes on multiple time scales, including a long time scale.

  13. Polymer Substrates For Lightweight, Thin-Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Lewis, Carol R.

    1993-01-01

    Substrates survive high deposition temperatures. High-temperature-resistant polymers candidate materials for use as substrates of lightweight, flexible, radiation-resistant solar photovoltaic cells. According to proposal, thin films of copper indium diselenide or cadmium telluride deposited on substrates to serve as active semiconductor layers of cells, parts of photovoltaic power arrays having exceptionally high power-to-weight ratios. Flexibility of cells exploited to make arrays rolled up for storage.

  14. X-ray diffraction study of polycrystalline BiFeO3 thin films under electric field

    NASA Astrophysics Data System (ADS)

    Nakashima, Seiji; Sakata, Osami; Nakamura, Yoshitaka; Kanashima, Takeshi; Funakubo, Hiroshi; Okuyama, Masanori

    2008-07-01

    Diffraction measurements using 12.4keV x-ray of synchrotron radiation have been performed in (001)pc- and (110)pc-oriented polycrystalline 350-nm-thick BiFeO3 thin films on a Pt /TiO2/SiO2/Si substrate under electric field in air at RT. Unipolar rectangular pulse voltages having a 150ns width and a 804.09ns period have been applied to BiFeO3 with a Pt top electrode. A diffraction peak of the (001)pc [(110)pc] plane shifts from 14.602° (20.520°) to 14.588 (20.505°) due to piezoelectric response when a 12V (11V ) pulse is applied. Piezoelectric constants (d33) of (001)pc-oriented and (110)pc-oriented domains estimated from these peak shifts are 27.8 and 26.4pm/V, respectively.

  15. Polycrystalline InN thin films prepared by ion-beam-assisted filtered cathodic vacuum arc technique

    NASA Astrophysics Data System (ADS)

    Ji, X. H.; Lau, S. P.

    2005-09-01

    We report on the fabrication of indium nitride (InN) thin films on silicon (1 0 0) substrates by radio frequency ion-beam-assisted filtered cathodic vacuum arc technique at low temperature. The effects of nitrogen ion energy on the structural properties of InN films have been investigated by X-ray diffraction and Raman spectroscopy. The InN films exhibit polycrystalline wurtzite structure. At nitrogen ion energy of 100 eV, the film shows preferred (0 0 0 2) orientation. The preferred orientation is changed to ( 1 0 1¯ 1) when the nitrogen ion energy is more than 100 eV. Three Raman-active optical phonons have been clearly identified and assigned to A 1(LO) at ˜588 cm -1, E22 at ˜490 cm -1 and A 1(TO) at ˜449 cm -1 of InN films, which confirmed the hexagonal structure of InN.

  16. Fatigue failure in thin-film polycrystalline silicon is due to subcritical cracking within the oxide layer

    NASA Astrophysics Data System (ADS)

    Alsem, D. H.; Stach, E. A.; Muhlstein, C. L.; Ritchie, R. O.

    2005-01-01

    It has been established that microelectromechanical systems created from polycrystalline silicon thin films are subject to cyclic fatigue. Prior work by the authors has suggested that although bulk silicon is not susceptible to fatigue failure in ambient air, fatigue in micron-scale silicon is a result of a "reaction-layer" process, whereby high stresses induce a thickening of the post-release oxide at stress concentrations such as notches, which subsequently undergoing moisture-assisted cracking. However, there exists some controversy regarding the post-release oxide thickness of the samples used in the prior study. In this letter, we present data from devices from a more recent fabrication run that confirm our prior observations. Additionally, new data from tests in high vacuum show that these devices do not fatigue when oxidation and moisture are suppressed. Each of these observations lends credence to the "reaction-layer" mechanism.

  17. Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

    NASA Astrophysics Data System (ADS)

    Vinodh Kumar, S.; Seenithurai, S.; Manivel Raja, M.; Mahendran, M.

    2015-10-01

    Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L21 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

  18. Fabrication of polycrystalline CdTe thin-film solar cells using carbon electrodes with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Hayashi, Ryoji; Ogawa, Yohei; Hosono, Aikyo; Doi, Makoto

    2015-04-01

    The effects of adding carbon nanotubes (CNTs) to carbon back electrodes in polycrystalline CdTe thin-film solar cells were investigated. The CNTs were prepared by arc discharge under atmospheric pressure. The conductivity of the obtained CNT film with a density of 1.65 g/cm3 was approximately 2.6 × 103 S/cm. In the CdTe solar cells using carbon back electrodes with CNTs, the fill factor (FF) was improved as a result of adding CNTs with a concentration of 1 to 5 wt %. The improvement of FF was mainly due to the decrease in the series resistance of the CdTe solar cell. Furthermore, the open-circuit voltage (VOC) was improved by the CNT addition. The improvement of VOC was probably due to the reduction of the back barrier at the back contact.

  19. Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors

    NASA Astrophysics Data System (ADS)

    Cheng, Horng-Long; Mai, Yu-Shen; Chou, Wei-Yang; Chang, Li-Ren

    2007-04-01

    The authors have fabricated the pentacene thin films on polymethylmethacrylate (PMMA) and on silicon dioxide dielectric surfaces featuring similar surface energy and surface roughness. On both surfaces the pentacene films displayed high crystal quality from x-ray diffraction scans, although the film on PMMA had significantly smaller grain size. The pentacene transistors with PMMA exhibited excellent electrical characteristics, including high mobility of above 1.1cm2/Vs, on/off ratio above 106, and sharp subthreshold slope below 1V/decade. The analysis of molecular microstructure of the pentacene films provided a reasonable explanation for the high performance using resonance micro-Raman spectroscopy.

  20. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  1. Radiation resistance of thin-film solar cells for space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  2. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models

    NASA Astrophysics Data System (ADS)

    Chason, Eric; Guduru, Pradeep R.

    2016-05-01

    Residual stress is a long-standing issue in thin film growth. Better understanding and control of film stress would lead to enhanced performance and reduced failures. In this work, we review how thin film stress is measured and interpreted. The results are used to describe a comprehensive picture that is emerging of what controls stress evolution. Examples from multiple studies are discussed to illustrate how the stress depends on key parameters (e.g., growth rate, material type, temperature, grain size, morphology, etc.). The corresponding stress-generating mechanisms that have been proposed to explain the data are also described. To develop a fuller understanding, we consider the kinetic factors that determine how much each of these processes contributes to the overall stress under different conditions. This leads to a kinetic model that can predict the dependence of the stress on multiple parameters. The model results are compared with the experiments to show how this approach can explain many features of stress evolution.

  3. Polycrystalline cadmium telluride 3n-i-p solar cell

    NASA Astrophysics Data System (ADS)

    Meyers, P. V.

    1989-06-01

    The CdS/CdTe/ZnTe n-i-p solar cell and its ternary relatives have the potential to meet Department of Energy cost, efficiency, and stability goals. This report describes results of a continuing program to achieve these goals. A record-breaking efficiency of 11 percent has been demonstrated and verified at the Solar Energy Research Institute (SERI). Stability testing for 3000 hours indicates that the n-i-p structure is stable. Improving the short-circuit current by substituting Cd/sub x/Zn/sub 1-x/S for CdS has been successful and has produced 8 plus percent efficient cells with 2.6 eV windows using improved pyrolysis equipment. Transparent n-i-p devices have been produced with a SERI-verified efficiency of 9.4 percent . Collaborations with researchers at the Georgia Institute of Technology, the Institute of Energy Conversion, and Jet Propulsion Laboratory have resulted in jointly produced n-i-p cells. Cells produced by molecular beam epitaxy and metal organic chemical vapor deposition had efficiencies greater than 9 percent; cells produced by thermal vacuum evaporation had efficiencies greater than 7 percent.

  4. Development of stable high efficiency polycrystalline thin-film solar cells based on CulnSe/sub 2/. Final report, 16 March 1983-15 March 1984

    SciTech Connect

    Birkmire, R.W.; Hall, R.B.; Phillips, J.E.; Meakin, J.D.

    1985-03-01

    A two-junction, monolithic, optically and electrically coupled solar cell has been designed and a successful prototype produced. Each junction is a thin-film polycrystalline cell, namely, CuInSe/sub 2//(CdZn)S and CdTe/(CdZn)S. All active semi-conductor layers are produced by physical vapor deposition. During this contract year, a procedure for producing thin-film p-type CdTe by physical vapor deposition and a usable transparent interconnect for the tandem cell were developed.

  5. Varying cadmium telluride growth temperature during deposition to increase solar cell reliability

    DOEpatents

    Albin, David S.; Johnson, James Neil; Zhao, Yu; Korevaar, Bastiaan Arie

    2016-04-26

    A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

  6. Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. . Defense and Space Systems Group)

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

  7. Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980

    SciTech Connect

    1980-10-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

  8. Transport phenomena in the close-spaced sublimation deposition process for manufacture of large-area cadmium telluride photovoltaic panels: Modeling and optimization

    NASA Astrophysics Data System (ADS)

    Malhotra, C. P.

    With increasing national and global demand for energy and concerns about the effect of fossil fuels on global climate change, there is an increasing emphasis on the development and use of renewable sources of energy. Solar cells or photovoltaics constitute an important renewable energy technology but the major impediment to their widespread adoption has been their high initial cost. Although thin-film photovoltaic semiconductors such as cadmium sulfide-cadmium telluride (CdS/CdTe) can potentially be inexpensively manufactured using large area deposition techniques such as close-spaced sublimation (CSS), their low stability has prevented them from becoming an alternative to traditional polycrystalline silicon solar cells. A key factor affecting the stability of CdS/CdTe cells is the uniformity of deposition of the thin films. Currently no models exist that can relate the processing parameters in a CSS setup with the film deposition uniformity. Central to the development of these models is a fundamental understanding of the complex transport phenomena which constitute the deposition process which include coupled conduction and radiation as well as transition regime rarefied gas flow. This thesis is aimed at filling these knowledge gaps and thereby leading to the development of the relevant models. The specific process under consideration is the CSS setup developed by the Materials Engineering Group at the Colorado State University (CSU). Initially, a 3-D radiation-conduction model of a single processing station was developed using the commercial finite-element software ABAQUS and validated against data from steady-state experiments carried out at CSU. A simplified model was then optimized for maximizing the steady-state thermal uniformity within the substrate. It was inferred that contrary to traditional top and bottom infrared lamp heating, a lamp configuration that directs heat from the periphery of the sources towards the center results in the minimum temperature

  9. The photocorrosion of n-cadmium telluride and its suppression

    NASA Astrophysics Data System (ADS)

    Curran, J. S.

    1980-09-01

    The photoelectrochemical properties of n-type cadmium telluride were studied in water and five other organic solvents, with a view to suppression of the photocorrosion reaction which prevents this and other n-type small bandgap semiconductors from being used in a practical semiconductor-electrolyte junction solar cell. Only the low donicity organic solvents propylene carbonate and methyl nitrate reduce the corrosion rate significantly. A stable photocurrent can be obtained using a solution of ferrocene in these two solvents but analysis of photoelectrolyzed solutions revealed a slow photocorrosion. The dependence of the flatband potential and of the practical significance with respect to solar cell applications considered.

  10. An evaluation of cadmium telluride detectors for computer assisted tomography.

    PubMed

    Chu, D; Kaufman, L; Hosier, K; Hoenninger, J

    1978-11-01

    Cadmium telluride (CdTe) presents a set of extremely attractive features as an X-ray detector for computer assisted tomography (CAT). It is stable and easily handled; has a high detection efficiency and very efficient conversion of energy to charge; and permits a high element density in a compact configuration. Unfortunately, effects due to "polarization," "tailing," high and variable leakage currents, and long "memory" are incompatible with the needs of CAT instrumentation. Pulse-processing techniques have allowed us to eliminate these problems in positive-sensitive detectors, thus opening the way for utilization of CdTe in CAT. PMID:711945

  11. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  12. Device characterization of cadmium telluride photovoltaics

    NASA Astrophysics Data System (ADS)

    Geisthardt, Russell M.

    Thin-film photovoltaics have the potential to make a large impact on the world energy supply. They can provide clean, affordable energy for the world. Understanding the device physics and behavior will enable increases in efficiency which will increase their impact. This work presents novel approaches for evaluating efficiency, as well as a set of tools for in-depth whole-cell and uniformity characterization. The understanding of efficiency losses is essential for reducing or eliminating the losses. The efficiency can be characterized by a breakdown into three categories: solar spectrum, optical, and electronic efficiency. For several record devices, there is little difference in the solar spectrum efficiency, modest difference in the optical efficiency, and large difference in the electronic efficiency. The losses within each category can also be further characterized. The losses due to the broad solar spectrum and finite temperature are well understood from a thermodynamic physics perspective. Optical losses can be fully characterized using quantum efficiency and optical measurements. Losses in fill factor can be quantified from series and shunt resistance, as well as the expected fill factor from the measured V oc and A. Open-circuit voltage losses are the most significant, but are also be the hardest to understand, as well as the most technology-dependent. Characterization of the whole cell helps to understand the behavior, performance, and properties of the cell. Several different tools can be used for whole-cell characterization, including current-voltage, quantum efficiency, and capacitance measurements. Each of these tools give specific information about the behavior of the cell. When combined, they can lead to a more complete understanding of the cell performance than when taken individually. These tools were applied to several specific CdTe experiments. They have helped to characterize the baseline performance of both the deposition tool and the

  13. Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices

    NASA Astrophysics Data System (ADS)

    Lee, Jinwoo

    High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of VCu-V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law

  14. Thin film polycrystalline silicon solar cells: first technical progress report, April 15, 1980-July 15, 1980

    SciTech Connect

    1980-07-01

    The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts during the past quarter have been directed to the purification of metallurgical silicon, the preparation of substrates, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was also determined. Large area (> 30 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by the thermal reduction of trichlorosilane containing appropriate dopants. Chemically deposited tin-dioxide films were used as antireflection coatings. Solar cells with AM1 efficiencies of about 8.5% have been obtained. Their spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation have been measured.

  15. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  16. Electrochemical characterisation of copper thin-film formation on polycrystalline platinum.

    PubMed

    Berkes, Balázs B; Henry, John B; Huang, Minghua; Bondarenko, Alexander S

    2012-09-17

    Electrochemically formed thin films are vital for a broad range of applications in virtually every field of modern science and technology. Understanding the film formation process could provide a means to aid the characterisation and control of film properties. Herein, we present a fundamental approach that combines two well-established analytical techniques (namely, electrochemical impedance spectroscopy and electrogravimetry) with a theoretical approach to provide physico-chemical information on the electrode/electrolyte interface during film formation. This approach allows the monitoring of local and overall surface kinetic parameters with time to enable an evaluation of the different modes of film formation. This monitoring is independent of surface area and surface concentrations of electroactive species and so may allow current computational methods to calculate these parameters and provide a deeper physical understanding of the electrodeposition of new bulk phases. The ability of this method to characterise 3D phase growth in situ in more detail than that obtained by conventional approaches is demonstrated through the study of a model system, namely, Cu bulk-phase deposition on a Pt electrode covered with a Cu atomic layer (Cu(ad)/Pt). PMID:22730305

  17. Thin-film polycrystalline n-ZnO/p-CuO heterojunction

    SciTech Connect

    Lisitski, O. L.; Kumekov, M. E.; Kumekov, S. E. Terukov, E. I.

    2009-06-15

    Results of X-ray diffraction and spectral-optical studies of n-ZnO and p-CuO films deposited by gas-discharge sputtering with subsequent annealing are presented. It is shown that, despite the difference in the crystal systems, the polycrystallinity of n-ZnO and p-CuO films enables fabrication of a heterojunction from this pair of materials.

  18. Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films

    SciTech Connect

    Wolden, Colin A.; Barnes, Teresa M.; Baxter, Jason B.; Aydil, Eray S.

    2005-02-15

    The changes in the free-carrier concentration in polycrystalline ZnO films during exposure to H{sub 2} and O{sub 2} plasmas were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. The carrier concentration and mobility were extracted from the free-carrier absorption in the infrared using a model for the dielectric function. The electron density in polycrystalline zinc oxide films may be significantly increased by >10{sup 19} cm{sup -3} by brief exposures to hydrogen plasma at room temperature and decreased by exposure to O{sub 2} plasmas. Room-temperature oxygen plasma removes a fraction of the H at donor sites but both elevated temperatures ({approx}225 deg. C) and O{sub 2} plasma were required to remove the rest. We demonstrate that combinations of O{sub 2} and H{sub 2} plasma treatments can be used to manipulate the carrier density in ZnO films. However, we also show the existence of significant drifts ({approx}15%) in the carrier concentrations over very long time scales (hours). Possible sites for H incorporation in polycrystalline films and reasons for the observed carrier-concentration changes are proposed.

  19. Preferred orientation in polycrystalline Cu(In,Ga)Se{sub 2} and its effect on absorber thin-films and devices

    SciTech Connect

    Contreras, M. A.; Jones, K. M.; Gedvilas, L.; Matson, R.

    2000-05-15

    The purpose of this work is to investigate physical properties of Cu(In,Ga)Se{sub 2} polycrystalline thin-films exhibiting a high degree of preferred orientation. Specifically, by using Na-free Cu(In,Ga)Se{sub 2} thin-films, it is intended to experimentally determine differences (if any) between films with a (110/102)-preferred orientation and films with a (112)-preferred orientation. The approach to the problem is a systematic comparative analysis of film and device properties in which the most significant variable is the preferred orientation of the Cu(In,Ga)Se{sub 2} polycrystalline absorbers. To complement the results of Na-free absorbers and devices, a microstructural analysis is presented on (110)-oriented high efficiency Cu(In,Ga)Se{sub 2} absorbers that are grown on standard Mo-coated soda-lime glass substrates.

  20. Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

    NASA Technical Reports Server (NTRS)

    Kim, Namsoo P.; Stanbery, Billy J.; Gale, Ronald P.; Mcclelland, Robert W.

    1989-01-01

    The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

  1. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu + Ag)/(In + Ga) ratio. Films deposited at 550 °C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  2. Effect of bottom electrodes on nanoscale switching characteristics and piezoelectric response in polycrystalline BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Yan, F.; Zhu, T. J.; Lai, M. O.; Lu, L.

    2011-10-01

    We have investigated the nanoscale switching characteristics and piezoelectric response based on polycrystalline BiFeO3 (BFO) thin films with different orientations deposited on different oxide bottom electrodes. The BFO film deposited on the LaNiO3 (LNO)-coated Si substrate shows a (001) preferred orientation and higher ferroelectric properties, while the BFO film grown on the SrRuO3 (SRO) buffered Si substrate shows a random orientation. The domain structures have been determined via piezoresponse force microscopy (PFM) for both films, predicting that the BFO film with the LNO bottom electrode has a larger piezoelectricity property corresponding to the ferroelastic domain. Through local switching spectroscopy measurements, the evidence of ferroelectric switching and the origin of the enhanced piezoresponse properties have been provided. A greatly improved piezoelectric response has been demonstrated using PFM that is 66.8 pm V-1 for the BFO with a SRO bottom electrode, while we obtain a value of 348.2 pm V-1 for the BFO with a LNO bottom electrode due to the increased density of the polarization vectors along the external electrical field.

  3. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    NASA Astrophysics Data System (ADS)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  4. Ultrafast optical control of magnetization dynamics in polycrystalline bismuth doped iron garnet thin films

    SciTech Connect

    Deb, Marwan Vomir, Mircea; Rehspringer, Jean-Luc; Bigot, Jean-Yves

    2015-12-21

    Controlling the magnetization dynamics on the femtosecond timescale is of fundamental importance for integrated opto-spintronic devices. For industrial perspectives, it requires to develop simple growth techniques for obtaining large area magneto-optical materials having a high amplitude ultrafast Faraday or Kerr response. Here we report on optical pump probe studies of light induced spin dynamics in high quality bismuth doped iron garnet polycrystalline film prepared by the spin coating method. We demonstrate an ultrafast non-thermal optical control of the spin dynamics using both circularly and linearly polarized pulses.

  5. Magnetic Properties of Polycrystalline Bismuth Ferrite Thin Films Grown by Atomic Layer Deposition.

    PubMed

    Jalkanen, Pasi; Tuboltsev, Vladimir; Marchand, Benoît; Savin, Alexander; Puttaswamy, Manjunath; Vehkamäki, Marko; Mizohata, Kenichiro; Kemell, Marianna; Hatanpää, Timo; Rogozin, Valentin; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

    2014-12-18

    The atomic layer deposition (ALD) method was applied to grow thin polycrystalline BiFeO3 (BFO) films on Pt/SiO2/Si substrates. The 50 nm thick films were found to exhibit high resistivity, good morphological integrity, and homogeneity achieved by the applied ALD technique. Magnetic characterization revealed saturated magnetization of 25 emu/cm(3) with temperature-dependent coercivity varying from 5 to 530 Oe within the temperature range from 300 to 2 K. Magnetism observed in the films was found to change gradually from ferromagnetic spin ordering to pinned magnetic domain interactions mixed with weak spin-glass-like behavior of magnetically frustrated antiferromagnetic/ferromagnetic (AFM-FM) spin ordering depending on the temperature and magnitude of the applied magnetic field. Antiferromagnetic order of spin cycloids was broken in polycrystalline films by crystal sizes smaller than the cycloid length (∼60 nm). Uncompensated spincycloids and magnetic domain walls were found to be the cause of the high magnetization of the BFO films. PMID:26273981

  6. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    SciTech Connect

    Machida, Emi; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ikenoue, Hiroshi

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  7. Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells

    SciTech Connect

    Bergmann, R.B.; Krinke, J.; Strunk, H.P.; Werner, J.H.

    1997-07-01

    The authors deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 {micro}m. Using transmission electron microscopy they find a log-normal grain size distribution in their films. They demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth. The log-normal grain size distribution seems to be a general feature of polycrystalline semiconductors.

  8. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    PubMed

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-01-01

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  9. A preliminary study on the use of cadmium telluride detectors in the scintigraphy of thyroid gland

    NASA Astrophysics Data System (ADS)

    Mancini, A. M.; Quirini, A.; Vasanelli, L.; Bacci, C.; Bernabei, R.; Pani, R.; Rispoli, B.; Ballesio, P. L.; Furetta, C.

    1981-10-01

    A cadmium telluride gamma detector has been used for monitoring the activity of a radioactive tracer in a thyroid gland. Preliminary measurements are reported in comparison with those obtained with a standard NaI(Tl) scintillator.

  10. Towards understanding junction degradation in cadmium telluride solar cells

    SciTech Connect

    Nardone, Marco

    2014-06-21

    A degradation mechanism in cadmium telluride (CdTe/CdS) solar cells is investigated using time-dependent numerical modeling to simulate various temperature, bias, and illumination stress conditions. The physical mechanism is based on defect generation rates that are proportional to nonequilibrium charge carrier concentrations. It is found that a commonly observed degradation mode for CdTe/CdS solar cells can be reproduced only if defects are allowed to form in a narrow region of the absorber layer close to the CdTe/CdS junction. A key aspect of this junction degradation is that both mid-gap donor and shallow acceptor-type defects must be generated simultaneously in response to photo-excitation or applied bias. The numerical approach employed here can be extended to study other mechanisms for any photovoltaic technology.

  11. Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Sood, Aditya; Cho, Jungwan; Hobart, Karl D.; Feygelson, Tatyana I.; Pate, Bradford B.; Asheghi, Mehdi; Cahill, David G.; Goodson, Kenneth E.

    2016-05-01

    While there is a great wealth of data for thermal transport in synthetic diamond, there remains much to be learned about the impacts of grain structure and associated defects and impurities within a few microns of the nucleation region in films grown using chemical vapor deposition. Measurements of the inhomogeneous and anisotropic thermal conductivity in films thinner than 10 μm have previously been complicated by the presence of the substrate thermal boundary resistance. Here, we study thermal conduction in suspended films of polycrystalline diamond, with thicknesses ranging between 0.5 and 5.6 μm, using time-domain thermoreflectance. Measurements on both sides of the films facilitate extraction of the thickness-dependent in-plane ( κ r ) and through-plane ( κ z ) thermal conductivities in the vicinity of the coalescence and high-quality regions. The columnar grain structure makes the conductivity highly anisotropic, with κ z being nearly three to five times as large as κ r , a contrast higher than that reported previously for thicker films. In the vicinity of the high-quality region, κ r and κ z range from 77 ± 10 W/m-K and 210 ± 50 W/m-K for the 1 μm thick film to 130 ± 20 W/m-K and 710 ± 120 W/m-K for the 5.6 μm thick film, respectively. The data are interpreted using a model relating the anisotropy to the scattering on the boundaries of columnar grains and the evolution of the grain size considering their nucleation density and spatial rate of growth. This study aids in the reduction in the near-interfacial resistance of diamond films and efforts to fabricate diamond composites with silicon and GaN for power electronics.

  12. Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells

    NASA Astrophysics Data System (ADS)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-07-01

    Cadmium sulfide (CdS) thin films are the most commonly used window materials for high efficient cadmium telluride (CdTe) and chalcopyrite polycrystalline thin-film photovoltaic devices. High efficient CdS/CdTe solar cells with thin CdS films have been developed using ultrathin CdS films with a thickness of less than 0.1 μm. CdS films were deposited on transparent conductive oxide (TCO)/glass substrates by the metal organic chemical vapor deposition (MOCVD) technique. CdTe films were subsequently deposited by the close-spaced sublimation (CSS) technique. The screen printing and sintering method fabricated carbon and silver electrodes. Cell performance depends primarily on the electrical and optical properties of CdS films. Therefore we started to develop higher-quality CdS films and found clear differences between high- and low-quality CdS films from the analyses of scanning electron microscope (SEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS), thermal desorption spectrometry (TDS) and Fourier transforms-infrared spectrometry (FT-IR) measurements. As a result of controlling the quality of CdS films, a photovoltaic conversion efficiency of 10.5% has been achieved for size of 1376 cm2 of the solar cells under the Air Mass (AM) 1.5 conditions of the Japan Quality Assurance Organization.

  13. Stable, high-efficiency, CuInSe2-based, polycrystalline, thin-film tandem solar cells

    NASA Astrophysics Data System (ADS)

    Birkmire, R. W.; Phillips, J. E.

    1987-10-01

    The long-term objective of this research was to obtain a stable, thin-film solar cell based on polycrystalline materials with an efficiency of 15 percent. The approach was to make a tandem cell based on CuInSe2/CdS as the bottom cell and CdTe/CdS as the top cell. An essential feature was to develop a CdTe cell with transport contacts. A suitable contacting system was developed using transparent conducting oxides (ITO and SnO2) in conjunction with a thin layer of copper. Cells were made with efficiencies over 8.5 percent. A reproducible fabrication process for CuInSe2/(CdZn)S cells was developed based on CuInSe2 films grown by vacuum evaporation using Knudsen-type effusion sources. These cells were made with efficiencies over 10 percent. The composition of the CuInSe2 films can be varied over a considerable range and still yield high-efficiency cells. Adding Zn to the CdS did not increase the V(sub oc) of the devices; analysis showed that the V(sub oc) is not controlled by interface recombination. The effect of oxidizing and reducing heat treatments on CuInSe2 cells is to change carrier concentration and thus V(sub oc). Analysis suggests that J(sub o) is controlled by band-to-band recombination. Monolithic tandem CuInSe2 CdTe cells have been made with efficiencies of approximately 3 percent, demonstrating the feasibility of this approach.

  14. Atomic-resolution characterization of the effects of CdCl{sub 2} treatment on poly-crystalline CdTe thin films

    SciTech Connect

    Paulauskas, T. Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Klie, R. F.

    2014-08-18

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl{sub 2} environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl{sub 2}, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  15. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    NASA Astrophysics Data System (ADS)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  16. Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Fan; Zhang, Rong Jun; Wang, Zi Yi; Zheng, Yu Xiang; Wang, Song You; Zhao, Hai Bin; Chen, Liang Yao; Liu, Xiao Bin; Jiang, An Quan

    2013-07-01

    Polycrystalline Pb(Zr0.35Ti0.65)O3 thin films prepared on Pt/Ti/SiO2/Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300-800 nm. The optical band gap of the films calculated following the Tauc's Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.

  17. [Spectral analyzing effects of atmosphere states on the structure and characteristics of CdTe polycrystalline thin films made by close-spaced sublimation].

    PubMed

    Zheng, Hua-jing; Zheng, Jia-gui; Feng, Liang-huan; Zhang, Jing-quan; Xie, Er-qing

    2005-07-01

    The structure and characteristics of CdTe thin films are dependent on the working atmosphere states in close-spaced sublimation. In the present paper, CdTe polycrystalline thin films were deposited by CSS in mixture atmosphere of argon and oxygen. The physical mechanism of CSS was analyzed, and the temperature distribution in CSS system was measured. The dependence of preliminary nucleus creation on the atmosphere states (involving component and pressure) was studied. Transparencies were measured and optic energy gaps were calculated. The results show that: (1) The CdTe films deposited in different atmospheres are cubic structure. With increasing oxygen concentration, a increases and reaches the maximum at 6% oxygen concentration, then reduces, and increases again after passing the point at 12% oxygen concentration. Among them, the sample depositing at 9% oxygen concentration is the best. The optic energy gaps are 1.50-1.51 eV for all CdTe films. (2) The samples depositing at different pressures at 9% oxygen concentration are all cubical structure of CdTe, and the diffraction peaks of CdS and SnO2:F still appear. With the gas pressure increasing, the crystal size of CdTe minishes, the transparency of the thin film goes down, and the absorption side shifts to the short-wave direction. (3) The polycrystalline thin films with high quality deposit in 4 minutes under the depositing condition that the substrate temperature is 550 degrees C, and source temperature is 620 degrees C at 9% oxygen concentration. PMID:16241058

  18. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    NASA Astrophysics Data System (ADS)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O2 pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm2. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O2 flow. Through this method, the compact and uniform CdTe film (30 × 40 cm2) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm2) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (Jsc) of the cell is 26.9 mA/cm2, open circuit voltage (Voc) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  19. Environmentally responsible recycling of thin-film cadmium telluride photovoltaic modules. Final technical report

    SciTech Connect

    Bohland, John

    2002-09-09

    Continuing from the third quarter, all technical objectives of this Phase II SBIR work were previously and successfully completed. This report is therefore brief and contains two elements (1) a comparison of technical objective accomplishments to the stated goals in the original grant proposal (2) a summary of the third key element of this work; a market analysis for the developed recycling technology systems.

  20. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    NASA Astrophysics Data System (ADS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-02-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H2-annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers.

  1. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology and application to flat-panel displays

    NASA Astrophysics Data System (ADS)

    Meng, Zhiguo

    High quality flat-panel displays (FPD) typically use active-matrix (AM) addressing, with the optical state of each pixel controlled by one or more active devices such as amorphous silicon (a-Si) thin film transistors (TFT). The successful examples are portable computer and liquid-crystal television (LC-TV). A high level of system on panel (SoP) electronic integration is required for versatile and compact systems. Meanwhile, many self-emitting display technologies are developing fast, active matrix for self-emitting display is typically current driven. The a-Si TFTs suffer from limited current driving capability, polycrystalline silicon (poly-Si) device technology is required. A new technology employing metal-induced unilaterally crystallization (MIUC) is presently reported. The device characteristics are obviously better than those in rapid-thermal annealed (RTA) and solid-phase crystallization (SPC) TFTs and the fabrication equipment is much cheaper than excimer laser crystallization (ELC) technology. The field effect mobility (muFE) of p- and n-channel MIUC TFTs is about 100cm2/Vs. Ion/I off is more than seven orders. Gate-induced leakage current in LT-MIUC poly-Si TFTs has been reduced by crystallization before heavy junction implantation to improve material quality and incorporating a gate-modulated lightly-doped drain (gamo-LDD) structure to reduce the electric field near the drain/channel junction region. At the same time, recrystallized (RC) MIUC TFT was researched with device characteristics improved. The 6.6cm 120 x 160 active matrix for OLED display is fabricated using LT-MIUC TFT technology on glass substrate. This display has the advantages of self-emitting, large intrinsic view angle and very fast response. At the same time, 6.6cm 120X160 AM-reflective twist nematic (RTN) display is fabricated using RC-MIUC TFT technology. This display is capable of producing 16 grade levels, 10:1 contrast and video image. The SOP display for AM-OLED were designed

  2. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    SciTech Connect

    Varade, Vaibhav Jagtap, Amardeep M.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.; Anjaneyulu, P.

    2015-06-07

    Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Φ{sub B} ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  3. Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Varade, Vaibhav; Jagtap, Amardeep M.; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Ramesh, K. P.; Menon, R.

    2015-06-01

    Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (˜ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (ΦB ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.

  4. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    DOE PAGESBeta

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and themore » parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.« less

  5. Development of a cadmium telluride pixel detector for astrophysical applications

    NASA Astrophysics Data System (ADS)

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  6. Compensation mechanism of bromine dopants in cadmium telluride single crystals

    SciTech Connect

    Bolotnikov, A. E.; Fochuk, P. M.; Verzhak, Ye. V.; Parashchuk, T. O.; Freik, D. M.; Panchuk, O. E.; James, R. B.; Gorichok, I. V.

    2015-01-02

    We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻Cd, Cd²⁺i, V²⁺Te, Te²⁻i), and substitutional ones (Br⁰Te, Br⁺Te), as well as complexes of point defects, i.e., (Br⁺Te V²⁻Cd)⁻ and (2Br⁺Te V²⁻Cd)⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(PCd) are determined by two dominant defects – Br⁺Te and (2Br⁺Te V²⁻Cd)⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

  7. Vapor crystal growth technology development: Application to cadmium telluride

    NASA Technical Reports Server (NTRS)

    Rosenberger, Franz; Banish, Michael; Duval, Walter M. B.

    1991-01-01

    Growth of bulk crystals by physical vapor transport was developed and applied to cadmium telluride. The technology makes use of effusive ampoules, in which part of the vapor contents escapes to a vacuum shroud through defined leaks during the growth process. This approach has the advantage over traditional sealed ampoule techniques that impurity vapors and excess vapor constituents are continuously removed from the vicinity of the growing crystal. Thus, growth rates are obtained routinely at magnitudes that are rather difficult to achieve in closed ampoules. Other advantages of this effusive ampoule physical vapor transport (EAPVT) technique include the predetermination of transport rates based on simple fluid dynamics and engineering considerations, and the growth of the crystal from close to congruent vapors, which largely alleviates the compositional nonuniformities resulting from buoyancy driven convective transport. After concisely reviewing earlier work on improving transport rates, nucleation control, and minimization of crystal wall interactions in vapor crystal growth, a detail account is given of the largely computer controlled EAPVT experimentation.

  8. Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

    NASA Astrophysics Data System (ADS)

    Bogle, K. A.; Narwade, R. D.; Phatangare, A. B.; Dahiwale, S. S.; Mahabole, M. P.; Khairnar, R. S.

    2016-05-01

    We are reporting photosensitivity property of BiFeO3 thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO3/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  9. Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering

    PubMed Central

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-01-01

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si–OH2+ and Si–O− bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems. PMID:24573308

  10. Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering.

    PubMed

    Yen, Li-Chen; Tang, Ming-Tsyr; Chang, Fang-Yu; Pan, Tung-Ming; Chao, Tien-Sheng; Lee, Chiang-Hsuan

    2014-01-01

    In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si-OH2(+) and Si-O(-) bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems. PMID:24573308

  11. Enhanced mobility of solution-processed polycrystalline zinc tin oxide thin-film transistors via direct incorporation of water into precursor solution

    NASA Astrophysics Data System (ADS)

    Huang, Genmao; Duan, Lian; Zhao, Yunlong; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2014-09-01

    Phase transition and the consequent variation in crystalline orientation of metal oxides have profound impact on their transport properties. In this work, we report a simple method to enhance field-effect mobility of solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) via direct incorporation of water into precursor solution. It is confirmed H2O molecules could effectively facilitate the conversion and alloying processes during ZTO film formation, characterized by the enhancement of spinel Zn2SnO4 phase and the reduction of cassiterite SnO2 phase. The preferred orientation of metal oxide crystallites varies according to the amount of water added into precursor solutions. Smooth and densely packed polycrystalline ZTO films with only a few organic residuals and moderate oxygen defects are fabricated from water-containing precursor solutions. With the incorporation of 1.67 M H2O, the extracted field-effect mobility of TFT devices could be improved by a factor of 2.3, from 0.92 to 2.11 cm2 V-1 s-1. This work offers a facile and cost-effective route towards high-mobility TFTs based on solution-processed polycrystalline metal oxide thin films.

  12. Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

    NASA Astrophysics Data System (ADS)

    Park, Woo Young; Park, Min Hyuk; Lee, Jong Ho; Yoon, Jung Ho; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong

    2012-12-01

    The strain states of [111]-, [110]-, and [002]-oriented grains in poly-crystalline sputtered (Ba,Sr)TiO3 thin films on highly [111]-oriented Pt electrode/Si substrates were carefully examined by X-ray diffraction techniques. Remarkably, [002]-oriented grains respond more while [110]- and [111]-oriented grains do less than the theoretically estimated responses, which is understandable from the arrangement of the TiO6 octahedra with respect to the stress direction. Furthermore, such mechanical responses are completely independent of the degree of crystallization and film thickness. The transition growth temperature between the positive and negative strains was also different depending on the grain orientation. The unstrained lattice parameter for each type of grain was different suggesting that the oxygen vacancy concentration for each type of grain is different, too. The results reveal that polycrystalline (Ba,Sr)TiO3 thin films are not an aggregation of differently oriented grains which simply follow the mechanical behavior of single crystal with different orientations.

  13. Determination of dispersion parameters of thermally deposited CdTe thin film

    NASA Astrophysics Data System (ADS)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  14. Directional Solidification of Mercury Cadmium Telluride in Microgravity

    NASA Technical Reports Server (NTRS)

    Lechoczhy, Sandor L.; Gillies, Donald C.; Szofran, Frank R.; Watring, Dale A.

    1998-01-01

    Mercury cadmium telluride (MCT) has been directionally solidified for ten days in the Advanced Automated Directional Solidification Furnace (AADSF) on the second United States Microgravity Payload Mission (USMP-2). A second growth experiment is planned for the USMP-4 mission in November 1997. Results from USMP-2 demonstrated significant changes between microgravity and ground-based experiments, particularly in the compositional homogeneity. Changes were also observed during the microgravity mission which were dependent on the attitude of the space shuttle and the relative magnitudes of axial and transverse residual accelerations with respect to the growth axis of the crystal. Issues of shuttle operation, especially those concerned with safety and navigation, and the science needs of other payloads dictated the need for changes in attitude. One consequence for solidification of MCT in the USMP4 mission is the desire for a shorter growth time to complete the experiment without subjecting the sample to shuttle maneuvers. By using a seeded technique and a pre-processed boule of MCT with an established diffusion layer quenched into the solid, equilibrium steady state growth can be established within 24 hours, rather than the three days needed in USMP-2. The growth of MCT in AADSF during the USMP-4 mission has been planned to take less than 72 hours with 48 hours of actual growth time. A review of the USMP-2 results will be presented, and the rationale for the USMP-4 explained. Pre-mission ground based tests for the USN4P-4 mission will be presented, as will any available preliminary flight results from the mission.

  15. Mercury Loss, Annealing and Ion Implantation in Mercury-Cadmium - Telluride.

    NASA Astrophysics Data System (ADS)

    Dimiduk, Kathryn Conway

    Mercury Cadmium Telluride (HG(,1-x)Cd(,x)Te) is a variable bandgap semiconductor that has important applications as an infrared detector. However, its processing is hampered by defect doping and Hg loss at low temperatures. This work reports studies of the HG loss and applies the information to annealing of epitaxial Hg(,1-x)Cd(,x)Te. Samples of Hg(,1-x)Cd(,x)Te of various compositions were heated to 250-430(DEGREES)C for times of 3-500 seconds in a thermal pulse annealing system. Rutherford backscattering spectrometry (RBS) with MeV He ions can resolve near surface Hg atoms from Cd and Te atoms. The Hg lost from these anneals can therefore be quantified by taking the difference of RBS spectra obtained before and after heating. An empirical fit to the equation Hg atoms lost/cm('2)-sec = A exp ( -(DELTA)E/kT) was found, where A and (DELTA)E depend on composition and surface preparation and k and T are Boltzmann's constant and temperature respectively. Various models for Hg loss are discussed and the binding energy of Hg in Hg(,1-x)Cd(,x)Te is computed. The above measurements provide the basis for determining the temperature-time trade off in Hg loss when annealing uncapped HgCdTe. The thermal pulse annealing system has permitted access to a regime intermediate between that of furnaces and lasers. Anneals at 260(DEGREES)C for 7 -8 seconds were found to improve the crystal quality of as grown epitaxial Hg(,.64)Cd(,.36)Te as observed by MeV He ion channeling. Similar anneals also repaired the crystal damage caused by a 250 keV 10('15)/cm('2) ('11)B implant into epitaxial HgCdTe held at LN(,2) temperatures. Van der Pauw Hall measurements showed type conversion following implantation, and increased mobility and carrier concentrations following annealing. A diode fabricated in this material exhibited a very sharp I-V curve with reverse breakdown occurring at 12 V and an R(,0)A of (GREATERTHEQ) 10('7) (OMEGA) cm('2) at 77K. Preliminary results obtained using SnO(,2) and Cd

  16. Chemical and electronic structure of surfaces and interfaces in cadmium telluride based photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Duncan, Douglas Arthur

    The surface and interface properties are of the upmost importance in the understanding, optimization, and application for photovoltaic devices. Often the chemical, electronic, and morphological properties of the films are empirically optimized, however when progress slows, a fundamental understanding of these properties can lead to breakthroughs. In this work, surfaces and interfaces of solar cell-relevant films are probed with a repertoire of X-ray analytical and microanalysis techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), X-ray emission (XES) spectroscopies, and atomic force (AFM) and scanning electron (SEM) microscopies. Silicon-based devices currently dominate the solar market, which is rather inflexible in application. Cadmium telluride (CdTe)-based technologies offer a cost-effective alternative with additional benefits including roll-to-roll production and high conversion efficiencies. This, like other next generation thin film solar cells, needs more optimization to replace Si. The charge transport across a heterojunction is of great importance to drive up the conversion efficiency of the device. The interface of a CdS buffer layer and SnO2:F front contact was investigated as a function of CdCl2-treatment. In order to measure the fully formed interface, after subsequent layer deposition and heat treatments, mechanical stressing of the layer stack resulted in physical separation at the desired interface. By combining multiple spectroscopic and morphologic methods a complete picture has evolved. CdS is often used as a buffer layer in CdTe based devices. This layer is empirically optimized to be very thin (˜100 nm) due to the parasitic light absorption in and around the 2 eV range. By widening the band gap or replacing it with a more transparent material, more photons can be absorbed by the CdTe layer and significantly increase the overall conversion efficiency of the device. CdS:O and Zn(1-x)MgxO were studied as possible

  17. Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Dietrich, J.; Abou-Ras, D. Schmidt, S. S.; Rissom, T.; Unold, T.; Cojocaru-Mirédin, O.; Niermann, T.; Lehmann, M.; Koch, C. T.; Boit, C.

    2014-03-14

    Thin-film solar cells based on Cu(In,Ga)Se{sub 2} (CIGSe) reach high power-conversion efficiencies in spite of large dislocation densities of up to 10{sup 10}–10{sup 11} cm{sup −2}. The present work gives insight into the structural and compositional properties of dislocations in CIGSe thin films, which are embedded in a complete solar cell stack. These properties are related to the average electrical potential distributions obtained by means of inline electron holography. At a part of the dislocations studied, the average electrostatic potential shows local minima, all with depths of about −1.4 V. The measured average electrostatic potential distributions were modeled in order to reveal possible influences from strain fields, excess charge, and also compositional changes at the dislocation core. Cu depletion around the dislocation core, as evidenced by atom-probe tomography, explains best the measured potential wells. Their influences of the strain field around the dislocation core and of excess charge at the dislocation core are small. A structural model of dislocations in CIGSe thin films is provided which includes a Cu-depleted region around the dislocation core and gives a possible explanation for why decent photovoltaic performances are possible in the presence of rather large dislocation densities.

  18. Growth of (111) oriented NiFe{sub 2}O{sub 4} polycrystalline thin films on Pt (111) via sol-gel processing

    SciTech Connect

    Seifikar, Safoura; Sachet, Edward; Rawdanowicz, Thomas; Schwartz, Justin; Tabei, Ali; Bassiri-Gharb, Nazanin

    2012-09-15

    Polycrystalline NiFe{sub 2}O{sub 4} (NFO) thin films are grown on (111) platinized Si substrates via chemical solution processing. {theta}-2{theta} x-ray diffraction, x-ray pole figures and electron diffraction indicate that the NFO has a high degree of <111> uniaxial texture normal to the film plane. The texturing is initiated by nucleation of (111) planes at the Pt interface and is enhanced with decreasing film thickness. As the NFO magnetic easy-axis is <111>, the out-of-plane magnetization exhibits improved M{sub r}/M{sub s} and coercivity with respect to randomly oriented films on silicon substrates. The out-of-plane M{sub r}/M{sub s} ratio for (111) textured NFO thin film is improved from 30% in 150 nm-thick films to above 70% in 50 nm-thick films. The improved out-of-plane magnetic anisotropy is comparable to epitaxial NFO films of comparable thickness deposited by pulsed laser deposition and sputtering.

  19. Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

    NASA Astrophysics Data System (ADS)

    Tuleushev, Yu. Zh.; Volodin, V. N.; Migunova, A. A.; Lisitsyn, V. N.

    2015-08-01

    Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002CCd + 0.6346 nm (where CCd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10-15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.

  20. Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal-Oxide-Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

    NASA Astrophysics Data System (ADS)

    Lee, Sang-Jin; Park, Jae-Hoon; Oh, Kum-Mi; Lee, Seok-Woo; Lee, Kyung-Eon; Shin, Woo-Sup; Jun, Myung-chul; Yang, Yong-Suk; Hwang, Yong-Kee

    2011-06-01

    We propose two types of six-step photomask, complementary metal-oxide-semiconductor (CMOS), thin-film transistor (TFT) PCT device structures in order to simplify their fabrication process compared with that of conventional, low-temperature, polycrystalline silicon (LTPS) CMOS TFT devices. The initial charge transfer characteristics of both types of six-step PCT are equivalent to those of the conventional nine-step PCT. Both types of six-step PCT are comparable to the conventional nine-step mask lightly doped drain (LDD) device in terms of the dc device lifetime of over 10 years at Vds=5 V for line inversion driving, which is the normally recognized duration time for semiconducting devices.

  1. Mechanical stress induced voltage shift in polycrystalline Bi3.25La0.75Ti3O12 thin films

    NASA Astrophysics Data System (ADS)

    Wu, Xiumei; Zhai, Ya; Kan, Yi; Lu, Xiaomei; Zhu, Jinsong

    2009-10-01

    Imprint behavior of polycrystalline Bi3.25La0.75Ti3O12 thin films under stress was studied. The voltage shift along the positive voltage axis can be depressed by tensile stress while increased by compressive stress. With the measured voltage increasing, the voltage shift referred above increases and the increase trend gets enhanced under both compressive and tensile stress compared with that at zero stress. The asymmetric distribution of the trapped charged in films, which is caused by the increase of the in-plane polarization component for the domain reorientation induced by stress or for the voltage-assisted domain walls depinning, was considered the contribution to the voltage shift.

  2. Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

    NASA Astrophysics Data System (ADS)

    Becker, Christiane; Pagels, Marcel; Zachäus, Carolin; Pollakowski, Beatrix; Beckhoff, Burkhard; Kanngießer, Birgit; Rech, Bernd

    2013-01-01

    The combination of polycrystalline silicon (poly-Si) thin films with aluminum doped zinc oxide layers (ZnO:Al) as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin-film materials requires high-temperature treatments, which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect-healing processes for silicon and can boost the carrier mobility and conductivity of ZnO:Al layers. In a combined poly-Si/ZnO:Al layer system, an in-depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 °C on solid phase crystallized poly-Si thin-film solar cells on ZnO:Al-coated glass, focusing on chemical interface reactions and modifications of the poly-Si absorber material quality. The presence of a ZnO:Al layer in the solar cell stack was found to limit the poly-Si solar cell performance with open circuit voltages only below 390 mV (compared to 435 mV without ZnO film), even if a silicon nitride (SiN) diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing-incidence X-ray fluorescence spectrometry, a depth-resolving analysis of the elemental composition close to the poly-Si/(SiN)/ZnO:Al interface was carried out. Temperatures above 1000 °C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates (Zn2SiO4) and aluminium oxide (AlxOy). These results give valuable insights about the temperature-limitations of Si/ZnO thin-film solar cell fabrication and the formation of high-mobility ZnO-layers by thermal anneal.

  3. Ion-assisted laser deposition of intermediate layers for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin film growth on polycrystalline and amorphous substrates

    SciTech Connect

    Reade, R.P.

    1993-11-01

    The growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) high-temperature superconductor thin films has largely been limited to deposition on single-crystal substrates to date. In order to expand the range of potential applications, growth on polycrystalline and amorphous substrates is desirable. In particular, the deposition of YBCO thin films with high critical current densities on polycrystalline metal alloys would allow the manufacture of superconducting tapes. However, it is shown that it is not possible to grow YBCO thin films directly on this type of substrate due to chemical and structural incompatibility. This work investigates the use of a yttria-stabilized zirconia (YSZ) intermediate layer to address this problem. An ion-assisted pulsed-laser deposition process is developed to provide control of orientation during the growth of the YSZ layers. The important properties of YBCO and YSZ are summarized and the status of research on thin film growth of these materials is reviewed. An overview of the pulsed-laser deposition (PLD) technique is presented. The use of ion-assisted deposition techniques to control thin film properties is discussed.

  4. Cobalt-free polycrystalline Ba0.95La0.05FeO3-δ thin films as cathodes for intermediate-temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Chen, Dengjie; Chen, Chi; Dong, Feifei; Shao, Zongping; Ciucci, Francesco

    2014-03-01

    Ba0.95La0.05FeO3-δ (BLF) thin films as electrodes for intermediate-temperature solid oxide fuel cells are prepared on single-crystal yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. The phase structure, surface morphology and roughness of the BLF thin films are characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy is used to analyze the compositions of the deposited thin film and the chemical state of transition metal. The dense thin film exhibits a polycrystalline perovskite structure with a low surface roughness and a high oxygen vacancy concentration on the surface. Ag (paste or strip) and Au (strip) are applied on both surfaces of the symmetric cells as current collectors to evaluate electrochemical performance of the thin films. The electrode polarization resistances of the symmetric cells are found to be lower than those of most cobalt-free thin-film electrodes, e.g., 0.437 Ω cm2 at 700 °C and 0.21 atm. The oxygen reduction reaction mechanism of the BLF cathode in symmetric cells is studied by electrochemical impedance spectroscopy thanks to the equivalent fitting analysis. Both the oxygen surface exchange reaction and charge transfer are shown to determine the overall oxygen reduction reaction.

  5. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    SciTech Connect

    Yun, J. Varalmov, S.; Huang, J.; Green, M. A.; Kim, K.

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  6. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    SciTech Connect

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  7. High efficiency indium oxide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Nakazawa, T.; Takamizawa, K.; Ito, K.

    1987-02-01

    Solar cells have been fabricated by reactive deposition of thin-film n-In2O3 onto single-crystal p-CdTe. The cell has a total area solar power conversion efficiency of 13.4 percent which corresponds to an active area efficiency of 14.4 percent at air mass 1.5 without antireflection coatings. The cell consists of a buried homojunction structure with low dark saturation current density.

  8. Influence of plasma parameters and substrate temperature on the structural and optical properties of CdTe thin films deposited on glass by laser ablation

    SciTech Connect

    Quiñones-Galván, J. G.; Santana-Aranda, M. A.; Pérez-Centeno, A.; Camps, Enrique; Campos-González, E.; Guillén-Cervantes, A.; Santoyo-Salazar, J.; Zelaya-Angel, O.; Hernández-Hernández, A.

    2015-09-28

    In the pulsed laser deposition of thin films, plasma parameters such as energy and density of ions play an important role in the properties of materials. In the present work, cadmium telluride thin films were obtained by laser ablation of a stoichiometric CdTe target in vacuum, using two different values for: substrate temperature (RT and 200 °C) and plasma energy (120 and 200 eV). Structural characterization revealed that the crystalline phase can be changed by controlling both plasma energy and substrate temperature; which affects the corresponding band gap energy. All the thin films showed smooth surfaces and a Te rich composition.

  9. Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se{sub 2} thin films

    SciTech Connect

    Müller, Mathias; Bertram, Frank; Christen, Jürgen; Abou-Ras, Daniel Rissom, Thorsten

    2014-01-14

    In a correlative study applying electron backscatter diffraction as well as spatially and spectrally resolved cathodoluminescence spectroscopy at low temperatures of about 5 K, the symmetry-dependent optoelectronic properties of grain boundaries in Cu(In,Ga)Se{sub 2} thin films have been investigated. We find that grain boundaries with lower symmetries tend to show a distinct spectral red shift of about 10 meV and a weak influence on the emission intensity. These behaviors are not detected at high-symmetry Σ3 grain boundaries, or at least in a strongly reduced way. The investigations in the present work help to clarify the ambivalent properties reported for grain boundaries in Cu(In,Ga)Se{sub 2}.

  10. Hysteresis in single and polycrystalline iron thin films: Major and minor loops, first order reversal curves, and Preisach modeling

    NASA Astrophysics Data System (ADS)

    Cao, Yue; Xu, Ke; Jiang, Weilin; Droubay, Timothy; Ramuhalli, Pradeep; Edwards, Danny; Johnson, Bradley R.; McCloy, John

    2015-12-01

    Hysteretic behavior was studied in a series of Fe thin films, grown by molecular beam epitaxy, having different grain sizes and grown on different substrates. Major and minor loops and first order reversal curves (FORCs) were collected to investigate magnetization mechanisms and domain behavior under different magnetic histories. The minor loop coefficient and major loop coercivity increase with decreasing grain size due to higher defect concentration resisting domain wall movement. First order reversal curves allowed estimation of the contribution of irreversible and reversible susceptibilities and switching field distribution. The differences in shape of the major loops and first order reversal curves are described using a classical Preisach model with distributions of hysterons of different switching fields, providing a powerful visualization tool to help understand the magnetization switching behavior of Fe films as manifested in various experimental magnetization measurements.

  11. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  12. The effect of Ta doping in polycrystalline TiO{sub x} and the associated thin film transistor properties

    SciTech Connect

    Ok, Kyung-Chul Park, Yoseb Park, Jin-Seong E-mail: jsparklime@hanyang.ac.kr; Chung, Kwun-Bum E-mail: jsparklime@hanyang.ac.kr

    2013-11-18

    Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiO{sub x}). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm{sup 2}/Vs to 0.61 cm{sup 2}/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta{sup 5+} ions that can act as electron donors.

  13. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance

    NASA Astrophysics Data System (ADS)

    Medina-Montes, Maria I.; Baldenegro-Perez, Leonardo A.; Sanchez-Zeferino, Raul; Rojas-Blanco, Lizeth; Becerril-Silva, Marcelino; Quevedo-Lopez, Manuel A.; Ramirez-Bon, Rafael

    2016-09-01

    ZnO thin films were processed by radio frequency magnetron sputtering at room temperature on p-Si/SiO2 substrates under pure argon (Ar:O2 = 100:0 vol.%) and argon-oxygen mixture (Ar:O2 = 99:1 vol.%) gas environment. Morphological, optical and electrical characteristics of the ZnO films are reported, and they show a clear relationship with the gas mixture employed for the sputtering process. Scanning Electron Microscopy revealed the formation of grains of 15.3 and 19.9 nm average sizes and thicknesses of 59 nm and 82 nm for films growth in pure argon and argon-oxygen, respectively. Photoluminescence measurements at room temperature showed the violet emission band (centered at 3 eV) which was only detected in the ZnO film grown under pure argon. From thermally stimulated conductivity measurements two traps with 0.27 and 0.14 eV activation energies were identified for films grown in pure argon and argon-oxygen mixture, respectively. The trap at 0.27 eV is associated with a level located below the conduction band edge and it is supported by the PL band centered at 3 eV. Both types of ZnO films were used as the active channel layer in thin film transistors with thermal SiO2 as gate dielectric. Field effect mobility, threshold voltage and current ratio were improved in the devices with ZnO channel deposited with the argon-oxygen mixture (99% Ar/1% O2 vol.). Threshold voltage decreased from 25 V to 15 V, field effect mobility and current ratio increased from 0.8 to 2.4 cm2/Vs and from 102 to 106, in that order.

  14. A Monte Carlo simulation study of boron profiles as-implanted into LPCVD NiDoS polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Boukezzata, M.; Ait-Kaki, A.; Temple-Boyer, P.; Scheid, E.

    2003-03-01

    This work presents a Monte Carlo simulation study of boron profiles obtained from as-implanted ions into thin films nitrogen doped silicon (NiDoS) thin films. These films are performed by LPCVD technique from Si2H6 and NH3 gas sources, four values deliberately chosen, of the ratio NH3/Si2H6 to obtain samples, differently in situ nitrogen-doped. Taking into account the effect of the codoping case, and the structure specificity of these films, an accurate Monte Carlo model based on binary collisions in a multi-atomic target was performed. Nitrogen atoms present in the target is shown to affect the boron profiles and confirms clearly a reduction penetration effect which becomes more significant at high nitrogen concentrations. Whereas, the fine-grained polysilicon structure, and thus the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon by assuming an effective role played by GB's in the scattering calculation process of the incident ions. This role is represented by the change in direction of the incident ion after interaction with GB without corresponding loss in its energy. The results obtained show an enhancement of the stopping parameter when nitrogen concentration increases, while the GB interaction remains very important. This behavior is due to a great number of GB's interactions with boron atoms which gave low deflection angles. So that, the average positions described by the sequences of trajectories took place farther than what expected with channeling effect in crystal silicon materials.

  15. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-04-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at ‑0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

  16. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

    PubMed Central

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  17. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

    PubMed

    Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

    2016-01-01

    Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

  18. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  19. Optoelectronic characterization of wide-bandgap (AgCu)(InGa)Se 2 thin-film polycrystalline solar cells including the role of the intrinsic zinc oxide layer

    NASA Astrophysics Data System (ADS)

    Obahiagbon, Uwadiae

    Experiments and simulations were conducted to vary the thickness and the sheet resistance of the high resistance (HR) ZnO layer in polycrystalline thin film (AgCu)(GaIn)Se2 (ACIGS) solar cells. The effect of varying these parameters on the electric field distribution, depletion width and hence capacitance were studied by SCAPS simulation. Devices were then fabricated and characterized by a number of optoelectronic techniques. Thin film CIGS has received a lot of attention, for its use as an absorber layer for thin film solar cells. However, the addition of Silver (Ag) to the CIGS alloy system increases the band gap as indicated from optical transmission measurements and thus higher open circuit voltage (Voc) could be obtained. Furthermore, addition of Ag lowers the melting temperature of the alloy and it is expected that this lowers the defect densities in the absorber and thus leads to higher performance. Transient photocapacitance analysis on ACIGS devices shows sharper band edge indicating lower disorder than CIGS. Presently there is a lack of fundamental knowledge relating film characteristics to device properties and performance. This is due to the fact that some features in the present solar cell structure have been optimized empirically. The goal of this research effort was to develop a fundamental and detailed understanding of the device operation as well as the loss mechanism(s) limiting these devices. Recombination mechanisms in finished ACIGS solar cell devices was studied using advanced admittance techniques (AS, DLCP, CV) to identify electronically active defect state(s) and to study their impact on electronic properties and device performance. Analysis of various optoelectronic measurements of ACIGS solar cells provided useful feedback regarding the impact on device performance of the HR ZnO layer. It was found that thickness between 10-100 nm had negligible impact on performance but reducing the thickness to 0 nm resulted in huge variability in all

  20. Photoinduced current transient spectroscopy technique applied to the study of point defects in polycrystalline CdS thin films

    SciTech Connect

    El Akkad, Fikry; Ashour, Habib

    2009-05-01

    CdS thin films of variable thickness (between 160 and 1200 nm) were prepared using rf magnetron sputtering. X-ray diffraction measurements showed that the films have hexagonal structure and that the crystallites are preferentially oriented with the <002> axis perpendicular to the substrate surface. The results of electrical conductivity measurements as a function of film thickness and of temperature provide evidence that the conductivity is controlled by a thermally activated mobility in the presence of an intergrain barrier. The room temperature barrier height phi decreases with the increase in film thickness. Values of phi between 0 and 0.25 eV were determined. Photoinduced current transient spectroscopy performed on five samples having different thicknesses showed the presence of 11 traps with activation energies in the range 0.08-1.06 eV; deeper traps being observed on thinner films. By comparison with literature results, seven traps are attributed to native defects and foreign impurities (mainly Cu, Au, and Ag). Four other traps, not previously observed, are attributed to residual defects. The observation that deeper traps are detected in samples with larger barrier heights has been discussed and interpreted in terms of the energy band profile near the grain boundary.

  1. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, Jennifer L; Stone, Matthew B

    2014-01-01

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80~K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  2. Structure and dynamics of cadmium telluride studied by x-ray and inelastic neutron scattering

    SciTech Connect

    Niedziela, J. L.; Stone, M. B.

    2014-09-08

    We present a combined study of density functional theory, x-ray diffraction, and inelastic neutron scattering examining the temperature dependent structure and lattice dynamics of commercially available cadmium telluride. A subtle change in the structure is evinced near 80 K, which manifests also in the measured phonon density of states. There is no change to the long-range ordered structure. The implications of the change in relation to structural defects are discussed.

  3. Polycrystalline CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, April 15, 1992--April 14, 1993

    SciTech Connect

    Dhere, N.G.

    1994-08-01

    The principal objective of the research project is to develop processes for the fabrication of cadmium-telluride, CdTe, and copper-indium-gallium-diselenide, Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}, polycrystalline-thin-film solar cells using techniques that can be scaled-up for economic manufacture on a large scale. The aims are to fabricate CdTe solar cells using Cd and Te layers sputtered from elemental targets; to promote the interdiffusion between Cd/Te layers, CdTe phase formation, and grain growth; to utilize non-toxic selenization so as to avoid the use of extremely toxic H{sub 2}Se in the fabrication of Cu(In{sub l{minus}x}Ga{sub x})Se{sub 2} thin-film solar cells; to optimize selenization parameters; to improve adhesion; to minimize residual stresses; to improve the uniformity, stoichiometry, and morphology of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} thin films, and the efficiency of CdTe and Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2} solar cells.

  4. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Choi, Sung-Hwan; Kim, Sun-Jae; Mo, Yeon-Gon; Kim, Hye-Dong; Han, Min-Koo

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (ΔVTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (ΔVTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  5. Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress

    NASA Astrophysics Data System (ADS)

    Sung-Hwan Choi,; Sun-Jae Kim,; Yeon-Gon Mo,; Hye-Dong Kim,; Min-Koo Han,

    2010-03-01

    We have investigated the electrical characteristics of short-channel p-type excimer laser annealed (ELA) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under high gate and drain bias stress. We found that the threshold voltage of short-channel TFTs was significantly shifted in the negative direction owing to high gate and drain bias stress (Δ VTH = -2.08 V), whereas that of long-channel TFTs was rarely shifted in the negative direction (Δ VTH = -0.10 V). This negative shift of threshold voltage in the short-channel TFT may be attributed to interface state generation near the source junction and deep trap state creation near the drain junction between the poly-Si film and the gate insulator layer. It was also found that the gate-to-drain capacitance (CGD) characteristic of the stressed TFT severely stretched for the gate voltage below the flat band voltage VFB. The effects of high gate and drain bias stress are related to hot-hole-induced donor like interface state generation. The transfer characteristics of the forward and reverse modes after the high gate and drain bias stress also indicate that the interface state generation at the gate insulator/channel interface occurred near the source junction region.

  6. High quality SiO2/Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere

    NASA Astrophysics Data System (ADS)

    Sano, Naoki; Sekiya, Mitsunobu; Hara, Masaki; Kohno, Atsushi; Sameshima, Toshiyuki

    1995-05-01

    A new post-metallization annealing technique was developed to improve the quality of metal-oxide-semiconductor (MOS) devices using SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition as gate insulators. The quality of the interface between SiO2 and crystalline Si was investigated by capacitance-voltage (C-V) measurements. An H2O vapor annealing at 270 C for 30 min efficiently decreased the interface trap density to 2.0 x 10(exp 10) cm(exp -2) eV(exp -1), and the effective oxide charge density from 1 x 10(exp 12) to 5 x 10(exp 9) cm(exp -2). This annealing process was also applied to the fabrication of Al-gate polycrystalline silicon thin film transistors (poly-Si TFT's) at 270 C. In p-channel poly-Si TFT's, the carrier mobility increased from 60-400 cm(exp 2) V(exp -1) s(exp - 1) and the threshold voltage decreased from - 5.5 to - 1.7 V.

  7. Stress-Induced Off-Current under On- and Off-State Stress Voltages in Low-Temperature n-Channel Polycrystalline Silicon Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Seishiro Hirata,; Toshifumi Satoh,; Hiroyuki Tango,

    2010-03-01

    The changes in off-current under on- and off-state stress voltages in n-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are investigated through measurements and simulations. It is found that the off-current increases markedly in the shallow-negative-gate-voltage region and decreases in the deep-gate-voltage region after applying both on- and off-state stresses, resulting in a weaker dependence on negative gate voltage. It can be supposed from the simulations and experiments that the donor-type trap states (positive charges) with a hump-type state profile, located at 0.1-0.2 eV below the midgap, and tail states are generated near the drain junction after applying both stresses. The amount of donor-type states increases in phonon-assisted tunneling with the Pool-Frenkel effect (PAT) and Schockley-Read-Hall generation (SRH) owing to the increase in the deep-trap-state density, and decreases in band-to-band tunneling (BBT) owing to the decrease in electric field, giving rise to a predominant PAT+SRH current in off-current in a wide-negative-gate-voltage region.

  8. Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

    NASA Astrophysics Data System (ADS)

    Wu, Shih-Chieh; Hou, Tuo-Hung; Chuang, Shiow-Huey; Chou, Hsin-Chih; Chao, Tien-Sheng; Lei, Tan-Fu

    2012-12-01

    This study demonstrates polycrystalline silicon thin-film transistors (poly-Si TFTs) integrated with a high-κ nickel-titanium oxide (NiTiO3) gate dielectric using sol-gel spin-coating and nitrogen channel implantation. This novel fabrication method of the high-κ NiTiO3 gate dielectric offers thin equivalent-oxide thickness and high gate capacitance density, favorable for increasing the current driving capability. Introducing nitrogen ions into the poly-Si using implantation effectively passivates the trap states not only in the poly-Si channel but also at the gate dielectric/poly-Si interface. The poly-Si NiTiO3 TFTs with nitrogen implantation exhibit significantly improved electrical characteristics, including lower threshold voltage, a steeper subthreshold swing, higher field-effect mobility, a larger on/off current ratio, and less threshold-voltage roll-off. Furthermore, the nitrogen implantation improves the reliability of poly-Si NiTiO3 TFTs against hot-carrier stress and positive bias temperature instability.

  9. Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress.

    PubMed

    Kim, Sang Sub; Choi, Pyung Ho; Baek, Do Hyun; Lee, Jae Hyeong; Choi, Byoung Deog

    2015-10-01

    In this research, we have investigated the instability of P-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) with double-layer SiO2/SiNx dielectrics. A negative gate bias temperature instability (NBTI) stress was applied and a turn-around behavior phenomenon was observed in the Threshold Voltage Shift (Vth). A positive threshold voltage shift occurs in the first stage, resulting from the negative charge trapping at the SiNx/SiO2 dielectric interface being dominant over the positive charge trapping at dielectric/Poly-Si interface. Following a stress time of 7000 s, the Vth switches to the negative voltage direction, which is "turn-around" behavior. In the second stage, the Vth moves from -1.63 V to -2 V, overwhelming the NBTI effect that results in the trapping of positive charges at the dielectric/Poly-Si interface states and generating grain-boundary trap states and oxide traps. PMID:26726370

  10. Atomic-resolution study of dislocation structures and interfaces in poly-crystalline thin film CdTe using aberration-corrected STEM

    NASA Astrophysics Data System (ADS)

    Paulauskas, Tadas; Colegrove, Eric; Buurma, Chris; Kim, Moon; Klie, Robert

    2014-03-01

    Commercial success of CdTe-based thin film photovoltaic devices stems from its nearly ideal direct band gap which very effectively couples to Sun's light spectrum as well as ease of manufacturing and low cost of these modules. However, to further improve the conversion efficiency beyond 20 percent, it is important to minimize the harmful effects of grain boundaries and lattice defects in CdTe. Direct atomic-scale characterization is needed in order identify the carrier recombination centers. Likewise, it is necessary to confirm that passivants in CdTe, such as Cl, are able to diffuse and bind to the target defects. In this study, we characterize dislocation structures and grain boundaries in poly-crystalline CdTe using aberration-corrected cold-field emission scanning transmission electron microscopy (STEM). The chemical composition of Shockley partial, Frank and Lomer-Cottrell dislocations is examined via atomic column-resolved X-ray energy dispersive (XEDS) and electron energy-loss spectroscopies (EELS). Segregation of Cl towards dislocation cores and grain boundaries is shown in CdCl2 treated samples. We also investigate interfaces in ultra-high-vacuum bonded CdTe bi-crystals with pre-defined misorientation angles which are intended to mimic grain boundaries. Funded by: DOE EERE Sunshot Award EE0005956.

  11. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    DOEpatents

    Findikoglu, Alp T.; Jia, Quanxi; Arendt, Paul N.; Matias, Vladimir; Choi, Woong

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  12. Thin-film-based CdTe photovoltaic module characterization: Measurements and energy prediction improvement

    NASA Astrophysics Data System (ADS)

    Lay-Ekuakille, A.; Arnesano, A.; Vergallo, P.

    2013-01-01

    Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m2. About 37 000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m2 and from -1 to 40 W/m2 from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

  13. Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980

    SciTech Connect

    Sopori, B.L.

    1980-11-01

    The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

  14. Investigation of photovoltaic mechanisms in polycrystalline thin-film solar cells. Interim technical report, November 1, 1980-July 31, 1981

    SciTech Connect

    Temofonte, T. A.; Szedon, J. R.; O'Keeffe, T. W.

    1982-03-05

    Effort is reported on measurement technique development to assess the utility of Deep-Level Transient Spectroscopy (DLTS) methods in characterizing polycrystalline silicon that was deliberately doped with Ti during growth. Difficulties encountered with lateral DLTS measurements are discussed. In this approach, modulation of the grain boundary, double-depletion region produces the entire DLTS signal. Major effort has been applied in grain boundary characterization and control. The most significant accomplishments to date have involved laser scanning of slices of Wacker SILSO polysilicon having nearly identical grain structure. By using various kinds of treatments and by comparing treated and untreated substrates having nearly identical grain structure, control of grain boundary photocurrent suppression (..delta..I/sub ph/) over the range 1% less than or equal to ..delta..I/sub ph/ less than or equal to 40% was demonstrated.

  15. Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

    SciTech Connect

    Hashimoto, Masaki; Kanomata, Kensaku; Momiyama, Katsuaki; Kubota, Shigeru; Hirose, Fumihiko

    2012-01-09

    In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150 deg. C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm{sup 2}/Vs at 297 K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22 eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.

  16. Polycrystalline domain structure of pentacene thin films epitaxially grown on a hydrogen-terminated Si(111) surface

    SciTech Connect

    Nishikata, S.; Sadowski, J. T.; Al-Mahboob, A.; Nishihara, T.; Fujikawa, Y.; Sakurai, T.; Nakajima, K.; Sazaki, G.; Suto, S.

    2007-10-15

    Single-monolayer high pentacene (Pn) dendrites grown on a hydrogen-terminated Si(111) surface [H-Si(111)] under ultrahigh vacuum were observed by low-energy electron microscopy and microbeam low-energy electron diffraction analyses. We determined the epitaxial structure (type I) inside a unique polycrystalline domain structure of such dendrites, each of which has six equivalent epitaxial orientations of Pn two-dimensional (2D) unit cells. There are three sets of these cells, which are rotated {+-}120 deg. relative to each other. Domain boundaries inside each dendrite were successfully observed by scanning tunneling microscopy. In addition, we found another epitaxial relation (type II): the polycrystalline domain structure and lattice parameters are similar to those of the type-I dendrite; however, the 2D unit cells of the type-II dendrite are rotated approximately 90 deg. relative to those of the type-I dendrite. These results suggest that the crystal structure of the dendrites on H-Si(111) is determined mainly by the interaction between Pn molecules. Each dendrite is composed of domains that are exclusively of type I or II. The so-called point-on-line coincidences are found between the Pn 2D lattices of types I and II, and H-Si(111). The higher commensurability of the type-I dendrites than the type-II dendrites results in a higher probability of type-I dendrite formation. Moreover, for both the type-I and type-II dendrites, we found supercell structures. We estimated the minimum interface energy between the dendrite and H-Si(111) from an island's free energy, which is necessary to reproduce the growth of a single-monolayer high dendrite.

  17. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  18. Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

    NASA Astrophysics Data System (ADS)

    Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

    2016-03-01

    Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

  19. Dielectric dynamics of the polycrystalline Ba0.5Sr0.5TiO3 thin films

    NASA Astrophysics Data System (ADS)

    Pečnik, Tanja; Eršte, Andreja; Matavž, Aleksander; Bobnar, Vid; Ivanov, Maksim; Banys, Juras; Xiang, Feng; Wang, Hong; Malič, Barbara; Glinšek, Sebastjan

    2016-05-01

    Polycrystalline Ba0.5Sr0.5TiO3 films, with thicknesses between 90 and 600 nm, were prepared on alumina substrates at 900 °C by chemical solution deposition (CSD) and a dielectric spectroscopy investigation of the in-plane properties was performed. The 5-kHz permittivity ε‧ shows a non-monotonic thickness dependence, reaching 1230 at room temperature for the 310-nm-thick film, whose grain size is ∼75 nm. Its 15-GHz-value and losses are 1105 and 0.05, respectively. The temperature of the permittivity maximum T max at 5 kHz decreases with increasing thickness from 277 to 250 K for the 170- and 600-nm-thick films, respectively, which has been linked to the residual biaxial stress. A hysteresis is observed in the permittivity ε‧-electric field E DC characteristics in all the films up to ∼50 K above T max . Frequency dispersion in which permittivity decreases with increasing frequency is present below T max in films thicker than 90 nm. The high permittivity values of the thinnest films, which are among the highest reported in the (Ba,Sr)TiO3 films with grain sizes below 75 nm, are a direct proof of the optimized CSD processing conditions.

  20. High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate

    NASA Astrophysics Data System (ADS)

    Qin, Guoxuan; Yuan, Hao-Chih; Yang, Hongjun; Zhou, Weidong; Ma, Zhenqiang

    2011-02-01

    Inexpensive polycrystalline Si (poly-Si) with large grain size is highly desirable for flexible electronics applications. However, it is very challenging to directly deposit high-quality poly-Si on plastic substrates due to processing constrictions, such as temperature tolerance and residual stress. In this paper, we present our study on poly-Si membranes that are stress free and most importantly, are transferrable to any substrate including a low-temperature polyethylene terephthalate (PET) substrate. We formed poly-Si-on-insulator by first depositing small-grain size poly-Si on an oxidized Si wafer. We then performed high-temperature annealing for recrystallization to obtain larger grain size. After selective doping on the poly-Si-on-insulator, buried oxide was etched away. By properly patterning the poly-Si layer, residual stress in the released poly-Si membranes was completely relaxed. The flat membrane topology allows the membranes to be print transferred to any substrates. High-performance TFTs were demonstrated on the transferred poly-Si membranes on a PET substrate.

  1. Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications

    NASA Astrophysics Data System (ADS)

    Irvine, S. J. C.; Lamb, D. A.; Clayton, A. J.; Kartopu, G.; Barrioz, V.

    2014-08-01

    This paper details the preliminary findings of a study to achieve a durable thin-film CdTe photovoltaic (PV) device structure on ultrathin space-qualified cover glass. An aluminum-doped zinc oxide (AZO) transparent conducting oxide was deposited directly onto the cover glass using metalorganic chemical vapor deposition (MOCVD). The AZO demonstrated low sheet resistance of 10 Ω/□ and high optical transparency of 85% as well as excellent adherence and environmental stability. Preliminary deposition of PV layers onto the AZO on cover glass, by MOCVD, showed the possibility of such a structure, yielding a device conversion efficiency of 7.2%. High series resistance (10 Ω cm2) and low V oc (586 mV) were identified as the limiting factors when compared with the authors' platform process on indium tin oxide-coated aluminosilicate. The coverage of the Cd1- x Zn x S window layer along with the front contacting of the device were shown to be the major causes of the low efficiency. Further deposition of AZO/CdTe employing an oxygen plasma cleaning step to the cover glass and evaporated gold front contacts significantly improved the device performance. With a highest conversion efficiency of 10.2%, series resistance improved to 4.4 Ω cm2, open-circuit voltage ( V oc) up to 667 mV, and good adhesion, this represents the first demonstration of direct deposition of CdTe solar cells onto 100- μm-thick space-qualified cover glass.

  2. Device physics of thin-film polycrystalline cells and modules: Phase 1 annual report: February 1998--January 1999

    SciTech Connect

    Sites, J. R.

    1999-12-21

    This report describes work done by Colorado State University (CSU) during Phase 1 of this subcontract. CSU researchers continued to make basic measurements on CI(G)S and CdTe solar cells fabricated at different labs, to quantitatively deduce the loss mechanisms in these cells, and to make appropriate comparisons that illuminate where progress is being made. Cells evaluated included the new record CIGS cell, CIS cells made with and without CdS, and those made by electrodeposition and electroless growth from solution. Work on the role of impurities focused on sodium in CIS. Cells with varying amounts of sodium added during CIS deposition were fabricated at NREL using four types of substrates. The best performance was achieved with 10{sup {minus}2}--10{sup {minus}1} at% sodium, and the relative merits of proposed mechanisms for the sodium effect were compared. Researchers also worked on the construction and testing of a fine-focused laser-beam apparatus to measure local variations in polycrystalline cell performance. A 1{micro}m spot was achieved, spatial reproducibility in one and two dimensions is less than 1 {micro}m, and photocurrent is reliably measured when the 1{micro}m spot is reduced as low as 1-sun in intensity. In elevated-temperature stress tests, typical CdTe cells held at 100 C under illumination and normal resistive loads for extended periods of time were generally very stable; but those held under reverse or large forward bias and those contacted using larger amounts of copper were somewhat less stable. CdTe cell modeling produced reasonable fits to experimental data, including variations in back-contact barriers. A major challenge being addressed is the photovoltaic response of a single simple-geometry crystallite with realistic grain boundaries.

  3. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    SciTech Connect

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao Qihua; Li Yixin; Street, Robert A.; Lu Jengping

    2009-07-15

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of {approx}10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical

  4. Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

    PubMed Central

    El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

    2009-01-01

    Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill

  5. Local retention behaviors of epitaxial and polycrystalline PbMg1/3Nb2/3O3-PbTiO3 thin films by scanning force microscopy

    NASA Astrophysics Data System (ADS)

    Lee, J. H.; Choi, M. R.; Oh, Y. J.; Jo, W.

    2007-08-01

    The authors report the results of retention in epitaxial and polycrystalline PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) thin films on SrRuO3 (SRO) and Pt. The SRO electrodes were deposited by pulsed laser deposition and the PMN-PT thin films were coated by a sol-gel method. Local poling behaviors of the PMN-PT domains were investigated as a function of time in both single-poled and reverse-poled regions by scanning force microscopy. An extended exponential decay is observed in the PMN-PT/SRO heterostructures while a fluctuated relaxation is shown in the PMN-PT/Pt films, suggesting that crystal orientation and grain growth is critical to understand retention of relaxor ferroelectrics.

  6. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  7. Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transport

    NASA Technical Reports Server (NTRS)

    Irene, E. A.; Tierney, E.; Wiedemeier, H.; Chandra, D.

    1983-01-01

    A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.

  8. Specific features of the photoconductivity of semi-insulating cadmium telluride

    SciTech Connect

    Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P. Strogankova, N. I.; Shadov, M. B.; Belov, A. G.

    2014-12-15

    The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

  9. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  10. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  11. Photovoltaic characteristics in polycrystalline and epitaxial (Pb0.97La0.03)(Zr0.52Ti0.48)O3 ferroelectric thin films sandwiched between different top and bottom electrodes

    NASA Astrophysics Data System (ADS)

    Qin, Meng; Yao, Kui; Liang, Yung C.

    2009-03-01

    Photovoltaic responses, including photovoltage, photocurrent, illuminated J-V curve, and light-to-electricity power conversion efficiency, were investigated in chemical-solution-derived polycrystalline and epitaxial (Pb0.97La0.03)(Zr0.52Ti0.48)O3 (PLZT) thin films sandwiched between different metal and oxide electrodes. The epitaxial PLZT films with Au/PLZT/Nb-doped SrTiO3 structure exhibited about one order of magnitude larger photocurrent and efficiency over the randomly oriented polycrystalline PLZT films with Au/PLZT/Pt structure due to the high crystalline quality with the reduced defects and enhanced depolarization field. The illuminated J-V curve was approximately linear for both polycrystalline and epitaxial PLZT thin films. The nonzero photovoltaic outputs in the unpoled films were induced by asymmetric interfacial Schottky barriers. The illuminated J-V curve shifted toward the positive voltage direction after positive poling and toward the negative voltage direction after negative poling, and the enhancement of efficiency only occurred when the polarization direction accorded with the direction of Schottky barrier difference at the two electrode interfaces. Thickness dependences of photovoltage, photocurrent, and light-to-electricity conversion efficiency were also examined. It was observed that photovoltage linearly increased with film thickness while both photocurrent and efficiency exponentially increased with the decrease in thickness. Furthermore, at a fixed small film thickness, efficiency was also found to increase reciprocally with the decrease of incident UV intensity.

  12. High-efficiency thin-film cadmium telluride photovoltaic cells. Annual subcontract report, January 20, 1995--January 19, 1996

    SciTech Connect

    Compaan, A D; Bohn, R G; Contreras-Puente, G

    1996-05-01

    This annual report covers the second year of a 3-year NREL subcontract with the University of Toledo that is focused on improvements in efficiency for radio frequency (rf)-sputtered CdS/CdTe solar cells. In earlier work supported by NREL, the University of Toledo established the viability of two new deposition methods for CdS/CdTe solar cells by fabricating cells with efficiencies greater than 10% at air mass (AM) 1.5 on soda lime glass for all-sputtered cells and also for all-laser-deposited cells. Most of the effort has been placed on radio frequency sputtering (RFS) because it was judged to be more economical and more easily scaled to large-area deposition. However, laser physical vapor deposition (LPVD) has remained the method of choice for the deposition of CdCl{sub 2} layers and also for the exploration of new materials such as the ternary alloys including CdS{sub x} Te{sub 1{minus}x} and dopants such as Cu in ZnTe.

  13. Effects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Davies, Alan R.

    To strongly contribute to the near-term electricity supply, CdTe-based photovoltaic devices must continue to improve in performance under the constraint of simple and cost efficient fabrication methods. This dissertation focuses on characterization and modeling of devices with non-uniform performance induced by the cell contacts. Devices were obtained from a commercially viable pilot-scale fabrication system at Colorado State University. Current versus voltage (J-V), quantum efficiency (QE) and laser-beam-induced current (LBIC) were the main characterization techniques applied in this work. The p-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back-electrode is formed. A common strategy of mitigating the performance-limiting contact barrier is to prepare the CdTe surface with a chemical etch, and include Cu to reduce the effective barrier. Non-uniformity of the etch or Cu inclusion, or insufficient application of Cu can result in a non-uniform contact, with regions of high- and low-energy Schottky barriers participating in the cell performance. Barrier non-uniformities in devices with little or no Cu were identified with the LBIC measurement and a model for their influence was developed and tested using PSpice circuit modeling software. Because of their superstrate configuration, CdTe cells feature front contacts made from transparent-conducting oxides (TCOs). Fluorine-doped tin oxide (F:SnO2) is a common choice because of its availability and acceptable optical and electrical properties. When the n-CdS layer of the CdS/CdTe structure is thinned to encourage greater current generation, non-uniformities of the solar cell junction arise, as CdTe comes into sporadic contact with the TCO layer. Device simulations suggest that the SnO2/CdTe junction is weaker than CdS/CdTe because of a large conduction-band offset induced by the differing electron affinities in the heterojunction. LBIC was used to verify increasing non-uniformity in devices with thin CdS and whole-cell performance followed the trends predicted by simulations. An empirical relationship between CdS thickness and relative influence the weaker junction was developed. The practical limit of CdS thickness was determined to be about 120 nm for CSU devices.

  14. Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells

    NASA Astrophysics Data System (ADS)

    Marinskiy, Dmitriy Nikolaevich

    1998-12-01

    One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga)Sesb2 solar cells. The study of the optical and structural properties of CdS films deposited by close spaced sublimation as well as their influence on CdS/CdTe solar cell performance is part of the CdTe solar cell program at the University of South Florida. CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in Hsb2 ambient, in CdClsb2 atmosphere, and in atmosphere with small amounts of oxygen. A special annealing chamber was built to carry out the annealing experiments in the presence of CdClsb2 vapor and oxygen. Several CSS chambers were assembled to study the influence of various process parameters simultaneously and validate the results. Results of scanning electron microscopy and photoluminescence measurements have been used as the primary characterization techniques. X-ray diffraction, electron microprobe analysis, and transmission measurements have also been carried out. It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance. CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements. The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation. To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.

  15. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    NASA Astrophysics Data System (ADS)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  16. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  17. Zinc oxide thin film acoustic sensor

    NASA Astrophysics Data System (ADS)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Mansour, Hazim Louis; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah

    2013-12-01

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  18. Identification of critical stacking faults in thin-film CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Yoo, Su-Hyun; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.; Walsh, Aron

    2014-08-01

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl2 is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  19. Identification of critical stacking faults in thin-film CdTe solar cells

    SciTech Connect

    Yoo, Su-Hyun; Walsh, Aron; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  20. Modeling and Characterization of MTF and Spectral Response at Small Pitch on Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Berthoz, J.; Grille, R.; Rubaldo, L.; Gravrand, O.; Kerlain, A.; Pere-Laperne, N.; Martineau, L.; Chabuel, F.; Leclercq, D.

    2015-09-01

    Space applications are challenging infrared (IR) technologies, demanding the best system performance achievable. This requires covering the entire IR spectrum from short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) for various pixel sizes, which is possible thanks to a well-mastered mercury cadmium telluride technology. Because of its adjustable gap, it can be operated in all the IR bands. Nevertheless, technology optimization requires deep understanding of physical mechanisms. This paper presents computations by finite-element modeling of two aspects of electrooptical performance: spectral response and modulation transfer function (MTF). Computations and characterizations for all IR bands demonstrate the accuracy of our simulations and the state-of-the-art nature of our technology, which performs according to theory. This paper also highlights the capability to measure MTF at very small pitch (10 μm) by a nondestructive method.

  1. Sign reversal of dielectric anisotropy of ferroelectric liquid crystals doped with cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Kumar, A.; Silotia, P.; Biradar, A. M.

    2011-08-01

    A small amount of cadmium telluride quantum dots (CdTe QDs) has been doped into various ferroelectric liquid crystals (FLCs) to observe the modifications in the alignment and dielectric anisotropy (Δɛ) of the composites. The CdTe QDs have induced a uniform homeotropic (HMT) alignment in most of the FLC mixtures. We observed an unexpected switching (from HMT to homogeneous configuration) of CdTe QDs doped FLC CS1026 (having positive Δɛ) by the application of high dc bias. This reverse switching has been attributed to the interaction between FLC molecules and CdTe QDs which caused the sign reversal of Δɛ of FLC CS1026.

  2. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    DOE PAGESBeta

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlationmore » between spatial maps of the lifetime, dark current, and relative response.« less

  3. The use of cadmium telluride detectors for the qualitative analysis of diagnostic x-ray spectra.

    PubMed

    Di Castro, E; Pani, R; Pellegrini, R; Bacci, C

    1984-09-01

    A method is introduced for the evaluation of x-ray spectra from x-ray machines operating in the range 50-100 kVp using a cadmium telluride (CdTe) detector with low detection efficiency. The pulse height distribution obtained with this kind of detector does not represent the true photon spectra owing to the presence of K-escape, Compton scattering, etc.; these effects were evaluated using a Monte Carlo method. A stripping procedure is described for implementation on a Univac 1100/82 computer. The validity of our method was finally tested by comparison with experimental results obtained with a Ge detector and with data from the literature; the results are in good agreement with published data. PMID:6483976

  4. Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

    SciTech Connect

    Soehnel, Grant

    2015-01-20

    The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlation between spatial maps of the lifetime, dark current, and relative response.

  5. Fluorescent cadmium telluride quantum dots embedded chitosan nanoparticles: a stable, biocompatible preparation for bio-imaging.

    PubMed

    Ghormade, Vandana; Gholap, Haribhau; Kale, Sonia; Kulkarni, Vaishnavi; Bhat, Suresh; Paknikar, Kishore

    2015-01-01

    Fluorescent cadmium telluride quantum dots (CdTe QDs) are an optically attractive option for bioimaging, but are known to display high cytotoxicity. Nanoparticles synthesized from chitosan, a natural biopolymer of β 1-4 linked glucosamine, display good biocompatibility and cellular uptake. A facile, green synthetic strategy has been developed to embed green fluorescent cadmium telluride quantum dots (CdTe QDs) in biocompatible CNPs to obtain a safer preparation than 'as is' QDs. High-resolution transmission electron microscopy showed the crystal lattice corresponding to CdTe QDs embedded in CNPs while thermogravimetry confirmed their polymeric composition. Electrostatic interactions between thiol-capped QDs (4 nm, -57 mV) and CNPs (~300 nm, +38 mV) generated CdTe QDs-embedded CNPs that were stable up to three months. Further, viability of NIH3T3 mouse fibroblast cells in vitro increased in presence of QDs-embedded CNPs as compared to bare QDs. At the highest concentration (10 μg/ml), the former shows 34 and 39% increase in viability at 24 and 48 h, respectively, as compared to the latter. This shows that chitosan nanoparticles do not release the QDs up to 48 h and do not cause extended toxicity. Furthermore, hydrolytic enzymes such as lysozyme and chitinase did not degrade chitosan nanoparticles. Moreover, QDs-embedded CNPs show enhanced internalization in NIH3T3 cells as compared to bare QDs. This method offers ease of synthesis and handling of stable, luminescent, biocompatible CdTe QDs-embedded CNPs with a favorable toxicity profile and better cellular uptake with potential for bioimaging and targeted detection of cellular components. PMID:25410797

  6. Physical characterization of cadmium telluride/cadmium sulfide photovoltaics: Defects, fields, and micrononuniformities

    NASA Astrophysics Data System (ADS)

    Shvydka, Diana

    Recent advances in large area thin-film photovoltaic manufacturing have raised a number of problems related to the physical parameters and processes behind the device efficiency and stability. The characteristics of interest include the defect spectra and related optical absorption, the built-in electric field distribution, the degree of lateral uniformity of the device, and the device stability. Established in this thesis is a set of techniques appropriate for the physical characterization of the above features in CdTe/CdS solar cells, addressing the issues of device spectra vs. energy (as revealed in the optical absorption, photoluminescence (PL), and admittance spectroscopy); the electric field distribution analyzed by means of bias dependent PL, and, indirectly, by capacitance measurements; device lateral resistivity and uniformity, through the phenomenon of nonlocal optical response and PL mapping; local parameter fluctuations as appear in virtually all of the above cases. The most important physical conclusions made are: energy spectra of polycrystalline CdTe based photovoltaics combine the features of crystalline materials, such as identifiable point defects, and amorphous materials, which exhibit continuous spectra of localized states; the concept of a single-defect (elemental) capacitance is for the first time defined and applied to estimate the density of states in polycrystalline p-n junctions; a phenomenon of bias-dependent PL in CdTe based photovoltaics is for the first time observed and modeled; a new phenomenon of nonlocal photovoltaic response is observed and interpreted. The results suggest several practical applications, such as: absorption and PL measurements as a diagnostic tool for monitoring the CdCl2, quality of treatments; admittance spectroscopy techniques to diagnose the material quality and degradation through its defect spectra and concentration; bias-dependent PL as a sensitive nondestructive accelerated life testing tool; nonlocal PV

  7. Control of the growth orientation and electrical properties of polycrystalline Cu2O thin films by group-IV elements doping

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Akimoto, Katsuhiro

    2004-11-01

    The effects of group-IV element dopants on the structural and electrical properties of Cu2O thin films were studied. Similar dopant-induced behavior was found in the observed variations of the growth orientation and electrical properties of Si- and Ge-doped Cu2O thin films. Ge doping was found to induce electrically active acceptors with an activation energy of 0.18 eV, comparable to the 0.19 eV value of Si-doped Cu2O. These results suggest that locally formed silicate and germanate have the same effect on the structural and electrical properties of Cu2O. On the other hand, Sn and Pb likely act as donors when incorporated substitutionally onto Cu-lattice sites, although further study may be required to suppress self-compensation effects in Cu2O to achieve n-type conductivity.

  8. The effect of different annealing temperatures on tin and cadmium telluride phases obtained by a modified chemical route

    SciTech Connect

    Mesquita, Anderson Fuzer; Porto, Arilza de Oliveira; Magela de Lima, Geraldo; Paniago, Roberto; Ardisson, José Domingos

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► Synthesis of cadmium and tin telluride. ► Chemical route to obtain pure crystalline cadmium and tin telluride. ► Effect of the annealing temperature on the crystalline phases. ► Removal of tin oxide as side product through thermal treatment. -- Abstract: In this work tin and cadmium telluride were prepared by a modification of a chemical route reported in the literature to obtain metallacycles formed by oxidative addition of tin-tellurium bonds to platinum (II). Through this procedure it was possible to obtain tin and cadmium telluride. X-ray diffraction and X-ray photoelectron spectroscopy were used to identify the crystalline phases obtained as well as the presence of side products. In the case of tin telluride it was identified potassium chloride, metallic tellurium and tin oxide as contaminants. The tin oxidation states were also monitored by {sup 119}Sn Mössbauer spectroscopy. The annealing in hydrogen atmosphere was chosen as a strategy to reduce the tin oxide and promote its reaction with the excess of tellurium present in the medium. The evolution of this tin oxide phase was studied through the annealing of the sample at different temperatures. Cadmium telluride was obtained with high degree of purity (98.5% relative weight fraction) according to the Rietveld refinement of X-ray diffraction data. The modified procedure showed to be very effective to obtain amorphous tin and cadmium telluride and the annealing at 450 °C has proven to be useful to reduce the amount of oxide produced as side product.

  9. Influence of Zn2+ doping on the crystal structure and optical-electrical properties of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Kavitha, R.; Sakthivel, K.

    2015-10-01

    The present study reports the synthesis of Cd1-xZnxTe (x = 0, 0.025, 0.050, 0.075 and 0.100) nanocrystalline thin film through a simple two step method. In the first step fine nanoparticles of Cd1-xZnxTe was prepared by solvothermal microwave irradiation (SMI) technique and then deposited as thin film using dip-coating technique. X-ray diffraction study showed that films are polycrystalline with cubic phase, which are preferentially oriented along the (1 1 1) direction. No impurity phase was observed in the XRD pattern even after higher concentration of doping (x = 0.100) of Zn. FESEM study revealed that the films are homogeneous without cracks and pinholes. TEM micrographs revealed the particles are slightly agglomerated and lesser than 25 nm. The optical absorption study revealed that pure and doped CdTe films possess a direct band gap material with bandgap values between 2.39 and 2.63 eV (±0.02 eV). The values of optical bandgap increase with an increase in dopant (Zn) concentration from x = 0.025 to 0.10. The pure cadmium telluride (CdTe) nanocrystalline film shows a strong green emission peak centered at about 525 nm. The emission peaks of Cd1-xZnxTe nanocrystalline films are red shifted from 525 nm to 611 nm according to the dopant (Zn2+) concentration. The grains in the prepared films are uniformly distributed, which was confirmed by narrow full width at half maximum (FWHM) of the emission peaks (40-65 nm). The DC conductivity has increased by 1.25 and 4 orders as the concentration of dopant increases from x = 0.025 to 0.10 at room temperature (30 °C) and 150 °C respectively. The higher conductivity value is underpinned by the smaller activation energy value and is explained by thermionic emission mechanism.

  10. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  11. Exploratory development of thin-film polycrystalline silicon photovoltaic devices. Report No. 3. Electron beam ribbon-to-ribbon (EB RTR) recrystallization of microcrystalline silicon ribbons

    SciTech Connect

    Gurtler, R.W.

    1981-09-01

    The electron beam has been applied as the energy source for ribbon-to-ribbon (RTR) recrystallization of thin-film silicon with very small (approx. 1 ..mu..m) grains into sheets with very large grains (> 1 cm). The system described uses two e-guns, one for producing a thin molten region across the microcrystalline ribbon (except for the edges), the other for establishing desirable thermal profiles in the cool-down (and heat-up) regions. In this way, no furnace, heat shield, or cooling structures are present, in contrast to all the other ribbon growing techniques. This simple arrangement is gained at the (reasonable) expense of having to work in a vacuum. A CCTV camera observes the temperature distribution and melt shape during growth; its output is coupled to a real-time image analyzer system and a computer. When there is a need to alter the temperature or melt shape in a region, the deflection/modulation circuitry is appropriately instructed, and (closing the loop) the change is made. The vacuum chamber with cassette feed for ribbons, electron guns, and camera, was completed and placed in operation. The overall system was run with a fined temperature profile for small RTR samples; resulting thin-film silicon ribbon quality was comparable to that obtained with laser beam RTR. The entire electronic system was not finished, however, so potential utility of the system for improving silicon ribbon quality and economics could not be ascertained.

  12. Preparation and Properties of Evaporated CdTe and All Thin Film CdTe/CdS Solar Cells

    NASA Astrophysics Data System (ADS)

    Shahzad, Naseem

    1991-05-01

    Cadmium telluride thin films were prepared by vacuum evaporation of CdTe powder in an attempt to fabricate all thin film solar cells of the type CdTe/CdS. Characterization of CdTe has shown it to have a band gap of 1.522 eV and a resistivity of 22Ω-cm. As prepared, solar cells exhibited low values of output parameters. Given quantity of copper was then deposited on top of the CdTe/CdS solar cells and the whole system was annealed at 350° C. This copper doping changed the output parameters favorably with a maximum efficiency of 1.9%.

  13. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    NASA Astrophysics Data System (ADS)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  14. High-throughput manufacturing of thin-film CdS/CdTe photovoltaic modules. Annual subcontract report, 16 September 1996--15 January 1998

    SciTech Connect

    Sandwisch, D.W.

    1998-08-01

    Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. Solar Cells, Inc., has developed this technology and is scaling its pilot production capabilities to a multi-megawatt level. The Photovoltaic Manufacturing Technology (PVMaT) subcontract supports these efforts. Activities during the third phase of the program concentrated on process development, equipment design and testing, quality assurance, ES and H programs, and large-scale next-generation coating-system prototype development. These efforts broadly addressed the issues of the manufacturing process for producing thin-film, monolithic CdS/CdTe photovoltaic modules.

  15. The effects of spatial location of defect states on the switching characteristics of amorphous and polycrystalline silicon thin film transistors: A numerical simulation using AMPS 2-D

    SciTech Connect

    Smith, J.; Fonash, S.; Kalkan, A.

    1994-06-01

    We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

  16. Temperature dependence measurements for Cadmium Telluride (CdTe) solar cells

    NASA Astrophysics Data System (ADS)

    Duarte, Fernanda; Wang, Weining

    2015-03-01

    Traditional silicon (Si)-based solar cells have been studied broadly and have already reached their maximum efficiency. However, their cost is relatively high, preventing them from being widely used. Unlike Si-based solar cells, Cadmium Telluride (CdTe) solar cells are considerably cheap, yet the record efficiency is still lower than that of traditional silicon-based solar cells. More studies are needed to understand and improve the efficiency of CdTe solar cells. In this work, we report our studies of the temperature dependence of CdTe solar cell parameters using the temperature-varying apparatus designed and built by us in-house. This temperature-varying apparatus will be incorporated with a solar cell testing station in order to measure the solar cell parameters while varying the temperature. The solar cell parameters will be measured at different temperatures (with a 100 K temperature range), and the effects of temperature on the open-circuit voltage, short-circuit current and efficiency of the solar cells will be reported. These results allow us to further understand the physics of CdTe solar cells and shine light on how to improve the efficiency of CdTe solar cells.

  17. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-05-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1-x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1-x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1-x Cd x Te etch rate. It is also observed that the exposed Hg1-x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1-x Cd x Te etch rate. Further, the exposed Hg1-x Cd x Te area is shown to affect the etch rate of the Hg1-x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1-x Cd x Te are listed, herein.

  18. Energy discriminating x-ray camera utilizing a cadmium telluride detector

    NASA Astrophysics Data System (ADS)

    Sato, Eiichi; Purkhet, Abderyim; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Wantanabe, Manabu; Nagao, Jiro; Nomiya, Seiichiro; Hitomi, Keitaro; Tanaka, Etsuro; Kawai, Toshiaki; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

    2009-07-01

    An energy-discriminating x-ray camera is useful for performing monochromatic radiography using polychromatic x rays. This x-ray camera was developed to carry out K-edge radiography using iodine-based contrast media. In this camera, objects are exposed by a cone beam from a cerium x-ray generator, and penetrating x-ray photons are detected by a cadmium telluride detector with an amplifier unit. The optimal x-ray photon energy and the energy width are selected out using a multichannel analyzer, and the photon number is counted by a counter card. Radiography was performed by the detector scanning using an x-y stage driven by a two-stage controller, and radiograms obtained by energy discriminating are shown on a personal computer monitor. In radiography, the tube voltage and current were 60 kV and 36 μA, respectively, and the x-ray intensity was 4.7 μGy/s. Cerium K-series characteristic x rays are absorbed effectively by iodine-based contrast media, and iodine K-edge radiography was performed using x rays with energies just beyond iodine K-edge energy 33.2 keV.

  19. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow.

    PubMed

    Ghaedi, M; Hekmati Jah, A; Khodadoust, S; Sahraei, R; Daneshfar, A; Mihandoost, A; Purkait, M K

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%. PMID:22306446

  20. Cadmium telluride nanoparticles loaded on activated carbon as adsorbent for removal of sunset yellow

    NASA Astrophysics Data System (ADS)

    Ghaedi, M.; Hekmati Jah, A.; Khodadoust, S.; Sahraei, R.; Daneshfar, A.; Mihandoost, A.; Purkait, M. K.

    2012-05-01

    Adsorption is a promising technique for decolorization of effluents of textile dyeing industries but its application is limited due to requirement of high amounts of adsorbent required. The objective of this study was to assess the potential of cadmium telluride nanoparticles loaded onto activated carbon (CdTN-AC) for the removal of sunset yellow (SY) dye from aqueous solution. Adsorption studies were conducted in a batch mode varying solution pH, contact time, initial dye concentration, CdTN-AC dose, and temperature. In order to investigate the efficiency of SY adsorption on CdTN-AC, pseudo-first-order, pseudo-second-order, Elovich, and intra-particle diffusion kinetic models were studied. It was observed that the pseudo-second-order kinetic model fits better than other kinetic models with good correlation coefficient. Equilibrium data were fitted to the Langmuir model. Thermodynamic parameters such as enthalpy, entropy, activation energy, and sticking probability were also calculated. It was found that the sorption of SY onto CdTN-AC was spontaneous and endothermic in nature. The proposed adsorbent is applicable for SY removal from waste of real effluents including pea-shooter, orange drink and jelly banana with efficiency more than 97%.

  1. Directional solidification of mercury cadmium telluride during the second United States Microgravity Payload Mission (USMP-2)

    SciTech Connect

    Gillies, D.C.; Lehoczky, S.L.; Szofran, F.R.; Watring, D.A.; Alexander, H.A.; Jerman, G.A.

    1996-12-31

    As a solid solution semiconductor having a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  2. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  3. Mercury-cadmium-telluride thin layers as subterahertz and infrared detectors

    NASA Astrophysics Data System (ADS)

    Sizov, Fedir; Tsybrii, Zinoviia; Zabudsky, Vyacheslav; Golenkov, Oleksandr; Petryiakov, Volodymyr; Dvoretsky, Sergey; Michailov, Nikolai; Shevchik-Shekera, Anna; Lysiuk, Ihor; Dieguez, Ernesto

    2015-12-01

    Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap "HgCdTe" semiconductor have been discussed. This mercury-cadmium-telluride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive "CdZnTe" or "GaAs" substrates, with bow-type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10 μm IR photoconductors. Their room temperature noise equivalent power at the frequency ν≈140 GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ˜0.1 μm) globar illumination reached the following values; ˜4.5×10-10 W/Hz1/2 and ˜50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated.

  4. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae.

    PubMed

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  5. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.; Martin, B. G.

    1980-01-01

    Mercury cadmium telluride crystals were prepared by the Bridgman method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of the crystal growth kinetics for the Hg(i-x)CdxTe alloys, and measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential thermal analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge carrier concentrations, charge carrier mobilities, Hall coefficient, optical absorptance, and Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

  6. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

    SciTech Connect

    Sizov, F.; Zabudsky, V.; Petryakov, V.; Golenkov, A.; Andreyeva, K.; Tsybrii, Z.; Dvoretskii, S.

    2015-02-23

    In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noise ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.

  7. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-03-01

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ˜3 × 1015 cm-3 and the hole mobility at the same temperature was ˜80 cm2/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ˜60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  8. Heart imaging by cadmium telluride gamma cameraEuropean Program ``BIOMED'' consortium

    NASA Astrophysics Data System (ADS)

    Scheiber, Ch.; Eclancher, B.; Chambron, J.; Prat, V.; Kazandjan, A.; Jahnke, A.; Matz, R.; Thomas, S.; Warren, S.; Hage-Hali, M.; Regal, R.; Siffert, P.; Karman, M.

    1999-06-01

    Cadmium telluride semiconductor detectors (CdTe) operating at room temperature are attractive for medical imaging because of their good energy resolution providing excellent spatial and contrast resolution. The compactness of the detection system allows the building of small light camera heads which can be used for bedside imaging. A mobile pixellated gamma camera based on 2304 CdTe (pixel size: 3×3 mm, field of view: 15 cm×15 cm) has been designed for cardiac imaging. A dedicated 16-channel integrated circuit has also been designed. The acquisition hardware is fully programmable (DSP card, personal computer-based system). Analytical calculations have shown that a commercial parrallel hole collimator will fit the efficiency/resolution requirements for cardiac applications. Monte-Carlo simulations predict that the Moire effect can be reduced by a 15° tilt of the collimator with respect to the detector grid. A 16×16 CdTe module has been built for the preliminary physical tests. The energy resolution was 6.16±0.6 keV (mean ± standard deviation, n=30). Uniformity was ±10%, improving to ±1% when using a correction table. Test objects (emission data: letters 1.8 mm in width) and cold rods in scatter medium have been acquired. The CdTe images have been compared to those acquired with a conventionnal gamma camera.

  9. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    SciTech Connect

    Beck, Patrick R.

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  10. Theory of the electronic properties of mercury-cadmium-telluride alloys

    NASA Astrophysics Data System (ADS)

    Chen, A. B.; Sher, A.

    1984-02-01

    An accurate band-structure theory for semiconductor alloys was achieved. It has been successfully applied to Mercury-Cadmium-Telluride alloys (MCT), and is being extended to III-V and other II-VI semiconductor alloys. As a result of this research, ten papers have been published. Several other papers and one book are in progress. The most important finding was the origin of the major disorder and its effects on different parts of the band structure. The large s-energy fluctuation between the Hg and Cd sites was found to cause a large smearing in the density of states about 5 eV below the top of the valence band, but it produced very little bowing and scattering for the states near the band gap. A detailed study of these facts accounts for the lattice instability of MCT and its very high electron mobility. Another significant result is that, while Cd weakens a neighboring Hg-Te bond, Zn strengthens it. Such structural studies may help resolve the adverse structural difficulties affecting MCT as an infrared material.

  11. Inhibition of autophagy contributes to the toxicity of cadmium telluride quantum dots in Saccharomyces cerevisiae

    PubMed Central

    Fan, Junpeng; Shao, Ming; Lai, Lu; Liu, Yi; Xie, Zhixiong

    2016-01-01

    Cadmium telluride quantum dots (CdTe QDs) are used as near-infrared probes in biologic and medical applications, but their cytological effects and mechanism of potential toxicity are still unclear. In this study, we evaluated the toxicity of CdTe QDs of different sizes and investigated their mechanism of toxicity in the yeast Saccharomyces cerevisiae. A growth inhibition assay revealed that orange-emitting CdTe (O-CdTe) QDs (half inhibitory concentration [IC50] =59.44±12.02 nmol/L) were more toxic than green-emitting CdTe QDs (IC50 =186.61±19.74 nmol/L) to S. cerevisiae. Further studies on toxicity mechanisms using a transmission electron microscope and green fluorescent protein tagged Atg8 processing assay revealed that O-CdTe QDs could partially inhibit autophagy at a late stage, which differs from the results reported in mammalian cells. Moreover, autophagy inhibited at a late stage by O-CdTe QDs could be partially recovered by enhancing autophagy with rapamycin (an autophagy activator), combined with an increased number of living cells. These results indicate that inhibition of autophagy acts as a toxicity mechanism of CdTe QDs in S. cerevisiae. This work reports a novel toxicity mechanism of CdTe QDs in yeast and provides valuable information on the effect of CdTe QDs on the processes of living cells. PMID:27524895

  12. Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

    SciTech Connect

    Ahmad, Faisal R.

    2015-03-21

    In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ∼3 × 10{sup 15 }cm{sup –3} and the hole mobility at the same temperature was ∼80 cm{sup 2}/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ∼60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.

  13. Cadmium telluride photovoltaic manufacturing technology. Annual subcontract report, 7 January 1994--6 January 1995

    SciTech Connect

    Weisiger, D.; Albright, S.P.; Brines, J.; Thompson, R.

    1995-11-01

    This report describes work performed by Golden Photon, Inc. (GPI), to conduct research under the PVMaT program, Phase 2B. The objective of the research is to advance GPI`s manufacturing technology, reduce module production costs, increase average module performance, and identify ways to expand production capacity. More specifically, the tasks established for Phase I were to design and install leasehold improvements for the 2-MW production line; to improve and develop product design, efficiency, and marketability; to ensure uninterrupted qualified supplies and raw materials for production; to address environmental, health, and safety issues encountered during production of photovoltaic modules; and to reduce the cost of manufacturing modules. During the first half of this reporting period, the development, design, and debugging of cell interconnection equipment critical to start-up was completed. During the second and third quarters, the primary focus was on the substrate deposition steps (tin oxide, cadmium sulfide, and cadmium telluride) and cell interconnection steps (division). In general, process development, engineering, and quality teams continued to focus on identifying, baselining, and improving (through redesign) actual process equipment operation parameters to meet the required PV panel specifications and improve process throughput rates and yields.

  14. Directional Solidification of Mercury Cadmium Telluride During the Second United States Microgravity Payload Mission (USMP-2)

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Lehoczky, S. L.; Szofran, F. R.; Watring, D. A.; Alexander, H. A.; Jerman, G. A.

    1996-01-01

    As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury cadmium telluride (MCT) presents a formidable challenge to crystal growers desiring an alloy of high compositional uniformity. To avoid constitutional supercooling during Bridgman crystal growth it is necessary to solidify slowly in a high temperature gradient region. The necessary translation rate of less than 1 mm/hr results in a situation where fluid flow induced by gravity on earth is a significant factor in material transport. The Advanced Automated Directional Solidification Furnace (AADSF) is equipped to provide the stable thermal environment with a high gradient, and the required slow translation rate needed. Ground based experiments in AADSF show clearly the dominance of flow driven transport. The first flight of AADSF in low gravity on USMP-2 provided an opportunity to test theories of fluid flow in MCT and showed several solidification regimes which are very different from those observed on earth. Residual acceleration vectors in the orbiter during the mission were measured by the Orbital Acceleration Research Experiment (OARE), and correlated well with observed compositional differences in the samples.

  15. X-ray rocking curve analysis of ion implanted mercury cadmium telluride

    NASA Astrophysics Data System (ADS)

    Williams, B. L.; Robinson, H. G.; Helms, C. R.; Zhu, N.

    1997-06-01

    Junction formation by ion implantation is a critical step in producing high quality infrared focal plane arrays in mercury cadmium telluride (MCT). We have analyzed the structural properties of MCT implanted with B at doses of 1014 and 1015 cm-2 using double and triple crystal x-ray diffraction (DCD and TCD) to monitor the disorder and strain of the implanted region as a function of processing conditions. TCD (333) reflections show that a distinct tensile peak is produced by the high dose implant while the low dose implant shows only a low angle shoulder on the substrate peak. A preliminary association of the low angle shoulder with point defects has been made since no extended defects have been observed in the low dose range. For the high dose implant, extended defect formation has been reported and may be responsible for the tensile peak. After annealing, the low angle shoulder on the low dose implant has disappeared, while the high dose implant exhibits an increase in the tensile strain from 6.5 × 10-4 to 9.3 × 10-4 after 24 h of annealing and then decreases in tensile strain to 7.3 × 10-4 after 48 h of annealing. It is believed the changes in strain are associated with the Oswald ripening and dissolution of extended defects, which has been observed during annealing of ion implanted Si.

  16. Cadmium telluride films for lightweight solar cells for space and terrestrial applications

    SciTech Connect

    Singh, V.P.; Lush, G.B.; Santiesteban, R.; McClure, J.C.; Chavez, H.

    1995-01-25

    Deposition of cadmium telluride (CdTe) films on steel foil substrates was investigated. Adherent CdTe films were vacuum evaporated and a growth rate of 3 nm/sec was obtained at a substrate temperature of 533 K. As deposited films exhibited a preferred (111) orientation. A tellurium interlayer between CdTe and steel yielded larger grains in CdTe than a gold interlayer. Annealing of CdTe films at 823 K increased the grain size and reduced the film resistance; it also tended to transform p-type CdTe into n-type. This was attributed to the diffusion of tellurium from CdTe into steel and diffusion of iron from the steel substrate into the CdTe film. This diffusion was observed using energy dispersive X-ray analysis. A photovoltage was obtained by depositing CdS on top of p-CdTe and a V{sub oc} of 360 mV was obtained. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}

  17. Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Eddy, C. R.; Hoffman, C. A.; Meyer, J. R.; Dobisz, E. A.

    1993-08-01

    It has been recently reported (J.R. Meyer, F.J. Bartoli, C.A. Hoffman, and L.R. Ram-Mohan, Phys. Rev. Lett. 64, 1963 [1990]) that novel electronic and optical effects are anticipated in nanometer scale features of narrow band gap semiconductors such as mercury cadmium telluride (MCT). These efforts could lead to the creation of non-linear optical switches, high efficiency infrared lasers, and unique nanoelectronic devices. This work reports on the first realization of MCT nanostructures through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave plasma source. It is shown that the low energy ions produced by an ECR system can etch MCT with good selectivity over an e-beam resist mask and with high resolution. Using these fabrication methods, 40 70 nm features with aspect ratios of 3 5∶1 and sidewall angles greater than 88° have been demonstrated. Qualitative investigations of some of the etch mechanisms of this technique are made, and results suggest a desorption limited process.

  18. Ferroelectric properties of (117)- and (001)-oriented Bi3.25La0.75Ti3O12 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Sun, Yu-Ming; Chen, Yi-Chan; Gan, Jon-Yiew; Hwang, Jenn-Chang

    2002-10-01

    Highly (117)- and (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated on Pt/TiO2/SiO2)/Si(100 substrates by chemical solution deposition under the appropriate baking and crystallization conditions. The (117)-oriented BLT films exhibited higher remanent polarization (2Pr=24 muC/cm2), than did (001)-oriented BLT films, which exhibited only a slight amount of polarization (2Pr=6.6 muC/cm2). The results of fatigue and retention tests revealed that neither film was fatigued up to 1 x1010 switching cycles, and the retained charge was unchanged for 1 x104 s.

  19. Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992

    SciTech Connect

    Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

  20. Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993

    SciTech Connect

    Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J.

    1993-10-01

    This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

  1. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  2. A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces

    NASA Astrophysics Data System (ADS)

    Wan, Chang-Feng; Orent, Thomas; Myers, Thomas; Bhat, Ishwara; Stoltz, Andy; Pellegrino, Joe

    2013-11-01

    A new method for Cd-rich annealing of mercury cadmium telluride (MCT) was developed based on the observation that the deposition of Cd onto MCT by vacuum evaporation became self-limiting whenever the substrate temperature was above 70°C regardless of the Cd evaporation rate. Preliminary results indicated that this new method may be suitable for passivation of high-aspect-ratio MCT surfaces, for passivation at low temperatures, for in vacuo operation, and/or for vacancy annihilation in MCT. Furthermore, the process can be carried out in the conventional open-tube reactors used for molecular beam epitaxy, metalorganic chemical vapor deposition, and physical vapor deposition.

  3. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2.

    PubMed

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M; Wu, Jerry J

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes. PMID:27131144

  4. On the possible role played by tunnel recombination in the loss processes of excess current carriers in cadmium telluride

    NASA Astrophysics Data System (ADS)

    Novikov, G. F.; Marinin, A. A.; Gapanovich, M. V.; Rabenok, E. V.

    2010-05-01

    The microwave photoconductivity method was used to study the kinetics of the decay of current carriers generated by nitrogen laser pulses in n- and p-type cadmium telluride. The dependences of the shape and amplitude of photoresponse decays on temperature and light intensity were studied. Photoresponse decays contained "fast" (at t < 30 ns) and "slow" (at t > 50 ns) components. At long times, the dependence of photoresponse on the logarithm of time was linear. The shape of slow component decays was almost independent of temperature. The slow component of photoresponse decay could correspond to the loss process of entrapped charges in tunnel recombination.

  5. Chemiluminescence studies between aqueous phase synthesized mercaptosuccinic acid capped cadmium telluride quantum dots and luminol-H2O2

    NASA Astrophysics Data System (ADS)

    Kaviyarasan, Kulandaivelu; Anandan, Sambandam; Mangalaraja, Ramalinga Viswanathan; Asiri, Abdullah M.; Wu, Jerry J.

    2016-08-01

    Mercaptosuccinic acid capped Cadmium telluride quantum dots have been successfully synthesized via aqueous phase method. The products were well characterized by a number of analytical techniques, including FT-IR, XRD, HRTEM, and a corrected particle size analysis by the statistical treatment of several AFM measurements. Chemiluminescence experiments were performed to explore the resonance energy transfer between chemiluminescence donor (luminol-H2O2 system) and acceptor CdTe QDs. The combination of such donor and acceptor dramatically reduce the fluorescence while compared to pristine CdTe QDs without any exciting light source, which is due to the occurrence of chemiluminescence resonance energy transfer (CRET) processes.

  6. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

    SciTech Connect

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S

    1996-01-01

    This report describes work performed in development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established in developing this material for PV applications, which is necessary to address issues of manufacturability and cost-which were recognized early in the program as being determined by successful solutions to issues of yield, reproducibility, and control as much as by material and energy costs, conversion efficiency, and process speed. Solarex identified at least one absorber formation process that is very robust to shunt formation from pinholes or point defects, tolerant of variation in processing temperature and elemental composition, and is capable of producing high conversion efficiency. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1000-CM{sup 2} size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.

  7. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final technical report, 14 December 1995--31 December 1996

    SciTech Connect

    Arya, R.; Fogleboch, J.; Kessler, J.; Russell, L.; Skibo, S.; Wiedeman, S.

    1997-04-01

    This report describes the progress made at Solarex for both device and module efficiencies from the inception of the CIS research program to the present. A rapid improvement in efficiency is apparent, culminating in the fabrication of a 15.5%-efficient device (total area) and a 13%-efficient submodule (aperture area). The device represents the highest efficiency device measured by NREL for any industrial source at that time. The module represented a new world record for any thin-film module at the time of its measurement. The factors leading to these results included improvements in absorber layer quality, transparent contacts, scribing and module formation processes. Other elements critical to the commercialization of CIS-based photovoltaics were also successfully attacked, including reduction of absorber deposition times into the range of 10 to 20 minutes and the successful scale-up of the absorber deposition process to greater than 500 cm{sup 2}. Other requisite processes saw continued development, such as a rapid, low-cost method for transparent window deposition. Subsequent to the demonstration of 13% module efficiency, scribing techniques were further improved that resulted in a reduction in shunt losses and higher module fill factor. This improvement, and the concomitant gain in fill factor, would yield efficiencies approaching 14% on modules having a short-circuit and open-circuit voltage comparable to the record module.

  8. Mercury-Cadmium-Telluride Focal Plane Array Performance Under Non-Standard Operating Conditions

    NASA Technical Reports Server (NTRS)

    Richardson, Brandon S.; Eastwood, Michael L.; Bruce, Carl F.; Green, Robert O.; Coles, J. B.

    2011-01-01

    This paper highlights a new technique that allows the Teledyne Scientific & Imaging LLC TCM6604A Mercury-Cadmium-Telluride (MCT) Focal Plane Array (FPA) to operate at room temperature. The Teledyne MCT FPA has been a standard in Imaging Spectroscopy since its creation in the 1980's. This FPA has been used in applications ranging from space instruments such as CRISM, M3 and ARTEMIS to airborne instruments such as MaRS and the Next Generation AVIRIS Instruments1. Precise focal plane alignment is always a challenge for such instruments. The current FPA alignment process results in multiple cold cycles requiring week-long durations, thereby increasing the risk and cost of a project. These alignment cycles are necessary because optimal alignment is approached incrementally and can only be measured with the FPA and Optics at standard operating conditions, requiring a cold instrument. Instruments using this FPA are normally cooled to temperatures below 150K for the MCT FPA to properly function. When the FPA is run at higher temperatures the dark current increases saturating the output. This paper covers the prospect of warm MCT FPA operation from a theoretical and experimental perspective. We discuss the empirical models and physical laws that govern MCT material properties and predict the optimal settings that will result in the best MCT PA performance at 300K. Theoretical results are then calculated for the proposed settings. We finally present the images and data obtained using the actual system with the warm MCT FPA settings. The paper concludes by emphasizing the strong positive correlation between the measured values and the theoretical results.

  9. Mitochondrial Toxicity of Cadmium Telluride Quantum Dot Nanoparticles in Mammalian Hepatocytes

    PubMed Central

    Nguyen, Kathy C.; Rippstein, Peter; Tayabali, Azam F.; Willmore, William G.

    2015-01-01

    There are an increasing number of studies indicating that mitochondria are relevant targets in nanomaterial-induced toxicity. However, the underlying mechanisms by which nanoparticles (NPs) interact with these organelles and affect their functions are unknown. The aim of this study was to investigate the effects of cadmium telluride quantum dot (CdTe-QD) NPs on mitochondria in human hepatocellular carcinoma HepG2 cells. CdTe-QD treatment resulted in the enlargement of mitochondria as examined with transmission electron microscopy and confocal microscopy. CdTe-QDs appeared to associate with the isolated mitochondria as detected by their inherent fluorescence. Further analyses revealed that CdTe-QD caused disruption of mitochondrial membrane potential, increased intracellular calcium levels, impaired cellular respiration, and decreased adenosine triphosphate synthesis. The effects of CdTe-QDs on mitochondrial oxidative phosphorylation were evidenced by changes in levels and activities of the enzymes of the electron transport chain. Elevation of peroxisome proliferator-activated receptor-γ coactivator levels after CdTe-QD treatment suggested the effects of CdTe-QDs on mitochondrial biogenesis. Our results also showed that the effects of CdTe-QDs were similar or greater to those of cadmium chloride at equivalent concentrations of cadmium, suggesting that the toxic effects of CdTe-QDs were not solely due to cadmium released from the NPs. Overall, the study demonstrated that CdTe-QDs induced multifarious toxicity by causing changes in mitochondrial morphology and structure, as well as impairing their function and stimulating their biogenesis. PMID:25809595

  10. Interdiffusion of CdS and Zn2SnO4 layers and its application in CdS/CdTe polycrystalline thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Wu, X.; Asher, S.; Levi, D. H.; King, D. E.; Yan, Y.; Gessert, T. A.; Sheldon, P.

    2001-04-01

    In this work, we found that the interdiffusion of the CdS and Zn2SnO4 (ZTO) layers can occur either at high temperature (550-650 °C) in Ar or at lower temperature (400-420 °C) in a CdCl2 atmosphere. By integrating a Zn2SnO4 film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO2-based and Cd2SnO4-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density Jsc. Interdiffusion can also significantly improve device adhesion after CdCl2 treatment, thus providing much greater process latitude when optimizing the CdCl2 process step. The optimum CdCl2-treated CdTe device has high quantum efficiency at long wavelength, because of its good junction properties and well-passivated CdTe film. We have fabricated a Cd2SnO4/Zn2SnO4/CdS/CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.8% (Voc=844.3 mV, Jsc=25.00 mA/cm2, and fill factor=74.82%). This high-performance cell is one of the best thin-film CdTe solar cells in the world.

  11. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  12. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  13. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  14. Optical Sensing Circuit Using Low-Temperature Polycrystalline Silicon p-Type Thin-Film Transistors and p-Intrinsic-Metal Diode for Active Matrix Displays with Optical Input Functions

    NASA Astrophysics Data System (ADS)

    Lim, Han-Sin; Kwon, Oh-Kyong

    2009-03-01

    An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-film transistors (TFTs) and a p-intrinsic-metal (p-i-m) diode is proposed for image scanning and touch sensing functions. Because it is a very difficult challenge to integrate both display pixels and optical sensing circuits into the restricted pixel area, the number of additional devices and control signal lines must be minimized. Therefore, two p-type TFTs, one p-i-m diode, one capacitor, and one signal line are added to display pixel for the proposed optical sensing circuit. Active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diode (AMOLED) pixels with the proposed optical sensing circuit have image scanning and touch sensing functions, respectively. Through the measurement of the proposed circuit under the condition of incident light varying from 0 to 10,000 lx, we verified that the dynamic and output ranges of the proposed circuit are 30 dB and 1.5 V, respectively.

  15. Optical information storage in PLZT thin films

    SciTech Connect

    Land, C.E.

    1989-01-01

    The feasibility of storing and reading high density optical information in lead zirconate titanate (PZT) and in lead lanthanum zirconate titanate (PLZT) thin films depends on both the longitudinal electrooptic coefficients and the photosensitivities of the films. This paper describes the methods used to measure both the longitudinal electrooptic effects and the photosensitivities of the thin films. The results of these measurements were used to evaluate a longitudinal quadratic electrooptic R coefficient, a linear electrooptic r/sub c/ coefficient and the wavelength dependence of the photosensitivity of a composition of PZT polycrystalline thin film. The longitudinal electrooptic R and r/sub c/ coefficients are about an order of magnitude less than the transverse R and R/sub c/ coefficients of the bulk ceramics of similar compositions. This is attributed to clamping of the film by the rigid substrate. The large birefringence after poling (>10/sup /minus/2/) suggests that the optic axes of the films are preferentially oriented normal to the film surface. The techniques used for evaluating the photosensitivities of the thin films are based on measuring the photocurrent generated rather than the reduction in coercive voltage (used previously for bulk ceramics) when the film is exposed to light. The thin film photosensitivities appear to be about three orders of magnitude higher than those of bulk ceramics of similar compositions. 14 refs., 12 figs., 1 tab.

  16. Thin film PV standing tall side-by-side with multi-crystalline silicon: also in terms of reliability

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.; Ward, Allan; Wieting, Robert; Guha, Subhendu; Dhere, Ramesh G.

    2015-09-01

    Triple junction hydrogenated amorphous silicon (a-Si:H) have shown exceptionally good reliability and durability. Cadmium telluride, CdTe PV modules have shown the lowest production cost without subsidies. Copper-indium gallium selenide sulfide (CIGS) and cadmium telluride (CdTe) cells and modules have been showing efficiencies equal or greater than those of multi-crystalline, (mx-Si), PV modules. Early generation CIGS and CdTe PV modules had a different qualification standard 61646 as compared to 61215 for crystalline silicon, (c-Si), PV modules. This, together with small vulnerability in harsh climates, was used to create doubts about their reliability. Recently CdTe and CIGS glass-to-glass modules have passed the rigorous accelerated tests, especially as long as the edge seals are not compromised. Moreover, the cumulative shipment of these modules is more than 12 GW demonstrating the customer confidence in these products. Hence it can be stated that also in terms of the reliability and durability all the thin film PV modules stand tall and compare favorably with mx-Si.

  17. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  18. Thin film metrology.

    PubMed

    Nitsch, Gerald; Flinn, Gregory

    2007-10-01

    Thin film metrology is suitable for characterising and performing quality control of a variety of coatings and films used in medical applications. The capabilities of today's systems are described. PMID:18078184

  19. Multifunctional thin film surface

    SciTech Connect

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  20. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  1. Hematite thin films: growth and characterization

    NASA Astrophysics Data System (ADS)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    2006-04-01

    We have grown hematite (α Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α Fe 2 O 3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  2. Hematite thin films: growth and characterization

    NASA Astrophysics Data System (ADS)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    We have grown hematite (α - Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α - Fe 2O3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  3. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  4. Superconducting UBe 13 thin films

    NASA Astrophysics Data System (ADS)

    Quateman, J. H.; Tedrow, P. M.

    1985-12-01

    Of the known heavy fermion superconductors only UBe 13 can have a low resistivity ratio and still go superconducting. In addition, it is a line compound with a melting temperature of nearly twice that of the constituents. These facts make UBe 13 a promising choice for fabrication in thin film form. We have successfully made 2000 Å UBe 13 films by coevaporation of uranium and beryllium on 700°C substrates which were then heated in situ to 1100°C. These films were polycrystalline as shown by X-ray diffraction and have Tc's of 0.85 K, that of the bulk. The resistivity rise at approximately 2 K and the strong negative magnetoresistance were also of the same magnitude as that of the bulk, as were both the perpendicular and parallel critical fields. Thin films of UBe 13 will make more accessible tunneling and proximity effect experiments which can help elucidate the nature of the superconductivity of this compound.

  5. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots.

    PubMed

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9×10(-6)-6.1×10(-5)molL(-1) with a detection limit of 1.1×10(-7)molL(-1). The sensor was applied for determination of doxycycline in honey and human serum samples. PMID:26204505

  6. A rapid and sensitive assay for determination of doxycycline using thioglycolic acid-capped cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Tashkhourian, Javad; Absalan, Ghodratollah; Jafari, Marzieh; Zare, Saber

    2016-01-01

    A rapid, simple and inexpensive spectrofluorimetric sensor for determination of doxycycline based on its interaction with thioglycolic acid-capped cadmium telluride quantum dots (TGA/CdTe QDs) has been developed. Under the optimum experimental conditions, the sensor exhibited a fast response time of <10 s. The results revealed that doxycycline could quench the fluorescence of TGA/CdTe QDs via electron transfer from the QDs to doxycycline through a dynamic quenching mechanism. The sensor permitted determination of doxycycline in a concentration range of 1.9 × 10-6-6.1 × 10-5 mol L-1 with a detection limit of 1.1 × 10-7 mol L-1. The sensor was applied for determination of doxycycline in honey and human serum samples.

  7. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  8. Microstructural characterization in nanocrystalline ceramic thin films

    NASA Astrophysics Data System (ADS)

    Kim, Hakkwan

    The primary objective of this research is to investigate the effects of process variables on microstructure in several fluoride and oxide thin films prepared by vapor deposition, in order to predict the properties and behaviors of nanocrystalline thin film materials. There are three distinct stages of this research. The first stage focuses on measuring of the porosity in polycrystalline thin films of a variety of fluorides as a function of the substrate temperature during deposition, and discussing the mechanism by which the porosity varies as a function of the process variables. We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF 2) and calcium fluoride (CaF2) using an atomic force microscope (AFM) and a quartz crystal thickness monitor. The porosity is very sensitive to the substrate temperature and decreases as the substrate temperature increases. Consistent behavior is observed among all of the materials in this study. The second stage is to understand the film microstructure including grain growth and texture development, because these factors are known to influence the behavior and stability of polycrystalline thin films. This study focuses on grain growth and texture development in polycrystalline lithium fluoride thin films using dark field (DF) transmission electron microscopy (TEM). It is demonstrated that we can isolate the size distribution of <111> surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction (XRD) and AFM, respectively. The grain size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains which do not grow significantly, while

  9. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  10. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  11. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  12. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  13. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  14. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  15. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  16. 13.4% efficient thin-film CdS/CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Chu, T. L.; Chu, S. S.; Ferekides, C.; Wu, C. Q.; Britt, J.; Wang, C.

    1991-12-01

    Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.

  17. Characterization of ZnInxSey Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se2 Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Ohtake, Yasutoshi; Chaisitsak, Sutichai; Yamada, Akira; Konagai, Makoto

    1998-06-01

    The structural, optical and electrical properties of ZnInxSey (ZIS) thin films on Cu(InGa)Se2 (CIGS) thin films and glass substrates were characterized. Polycrystalline ZIS thin films were grown by the coevaporation method using three constituent elements. We confirmed the formation of ZnIn2Se4 from the X-ray diffraction patterns of the ZIS thin films on glass substrates. From the transmittance and reflectance measurements of these films, the bandgap of ZIS is estimated at around 2.0 eV in this study. In addition, the ZIS films on glass substrates show low dark conductivity and high photosensitivity, which are suitable for the buffer layer in CIGS thin-film solar cells. We also fabricated the CIGS thin-film solar cells with a ZnO/ZIS/CIGS structure, and investigated the relationship between the cell performance and the beam intensity ratio of zinc to indium.

  18. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  19. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Final technical report, April 9, 1979-April 8, 1980

    SciTech Connect

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-06-01

    After a brief review of the work done during the first three quarters, the work done during the last quarter is discussed in detail. In brief, CdTe sputtered self-doped and indium-doped n-type layers on Ni-film on glass have been investigated for film resistivity, contact resistance, Hall mobility and Schottky barrier diode characteristics. Ni has been found to provide satisfactory ohmic contacts and self-doped samples have indicated Hall mobility of approximately 8cm/sup 2//Vsec when the effective doping concentration is approximately 10/sup 18/cm/sup -3/. Use of indium doped sputtered films, when properly surface treated prior to metallization, appear to yield the best kind of Schottky barrier diode with approximate barrier height of 0.77 volt and Richardson constant A* approx. = 60 A/cm/sup 20/K/sup 2/. In spite of these attractive parameter values, these devices showed low V/sub oc/ and the capacitance showed unexpected frequency dependence that require further investigation. Finally suggestions for future work is presented.

  20. Controlled cadmium telluride thin films for solar cell applications (emerging materials systems for solar cell applications). Quarterly progress report No. 3, October 9, 1979-January 8, 1980

    SciTech Connect

    Vedam, K; Das, M B; Krishnaswamy, S V

    1980-02-01

    The main emphasis during the third quarter of the program was on the improvement of the quality of sputtered films, their characterization and use in the fabrication of Schottky barrier type diodes and solar cell structures. Films prepared under different conditions and on different substrates were examined by SEM showing nodular growths under certain conditions. I-V, C-V and photovoltaic characteristics were measured on numerous samples based on n- and p-type films on Ni substrates having top metallization of either evaporated Au and Al. The n-type samples showed up to 200mV V/sub oc/ and small short-circuit currents. The characteristics observed are indicative of the presence of interfacial layer and surface states. Surface state's capacitance were measured on p-type samples metallized with Au.

  1. Electrodeposited CulnSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1998-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  2. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  3. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  4. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  5. Thin film superconductor magnetic bearings

    SciTech Connect

    Weinberger, B.R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft that is subject to a load (L) and rotatable around an axis of rotation, a magnet mounted to the shaft, and a stator in proximity to the shaft. The stator has a superconductor thin film assembly positioned to interact with the magnet to produce a levitation force on the shaft that supports the load (L). The thin film assembly includes at least two superconductor thin films and at least one substrate. Each thin film is positioned on a substrate and all the thin films are positioned such that an applied magnetic field from the magnet passes through all the thin films. A similar bearing in which the thin film assembly is mounted on the shaft and the magnet is part of the stator also can be constructed. 8 figs.

  6. Thin film polycrystalline silicon solar cells

    SciTech Connect

    Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

    1980-01-01

    During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

  7. Thin-film polycrystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  8. Advanced thin film thermocouples

    NASA Astrophysics Data System (ADS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-10-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  9. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  10. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  11. Evaporated VOx Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  12. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  13. Thin film processing of photorefractive BaTiO3

    NASA Technical Reports Server (NTRS)

    Schuster, Paul R.; Potember, Richard S.

    1991-01-01

    The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

  14. thin films as absorber

    NASA Astrophysics Data System (ADS)

    González, J. O.; Shaji, S.; Avellaneda, D.; Castillo, G. A.; Das Roy, T. K.; Krishnan, B.

    2014-09-01

    Photovoltaic structures were prepared using AgSb(S x Se1- x )2 as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S x Se1- x )2] were prepared by heating multilayers of sequentially deposited Sb2S3/Ag dipped in Na2SeSO3 solution, glass/Sb2S3/Ag/Se. For this, Sb2S3 thin films were deposited from a chemical bath containing SbCl3 and Na2S2O3. Then, Ag thin films were thermally evaporated on glass/Sb2S3, followed by selenization by dipping in an acidic solution of Na2SeSO3. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S x Se1- x )2 thin films as the primary phase and AgSb(S,Se)2 and Sb2S3 as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV-vis-IR transmittance and reflection spectral analysis. AgSb(S x Se1- x )2 formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S x Se1- x )2/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J- V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J- V characteristics resulted in the best solar cell parameters of V oc = 520 mV, J sc = 9.70 mA cm-2, FF = 0.50 and η = 2.7 %.

  15. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  16. Potential health and safety hazards associated with the production of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells

    SciTech Connect

    Moskowitz, P.D.; Fthenakis, V.M.; Lee, J.C.

    1985-04-01

    In large-scale manufacture of cadmium telluride, copper indium diselenide, and zinc phosphide photovoltaic cells, the materials and equipment used may present potential health and safety hazards to workers and the public. These hazards were identified by reviewing data on process materials, availability of control technology, biomedical effects, and health and environmental standards. Quantitative estimates of material inputs and outputs, and control technology costs for selected processes were based on preliminary engineering designs for hypothetical 10-MWp/yr photovoltaic cell production facilities. In the fabrication of these devices, unusually large quantities of some toxic gases may be used; large demands for phosphine and hydrogen selenide are of special concern. Because projected usage of these materials is much larger than the current one, a thorough evaluation of engineering controls will be needed before the technologies are commercialized. These materials could also present occupational health hazards. Some management options to reduce occupational exposures to these materials are presented. Although specific federal and state regulations have not been promulgated for emissions from the photovoltaic industry, prudent engineering practice should be applied to all waste streams - solid, atmospheric, or liquid - containing toxic pollutants to limit discharges of these materials. Control costs for most atmospheric waste streams should not be large (<0.01 cent per watt); for phosphine, however, costs are potentially much larger (4.4 cents per watt). Some processes may also produce large quantities of solid waste defined as toxic or hazardous under US Environmental Protection Agency guidelines. Disposal costs for these materials are presented.

  17. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-03-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.

  18. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

    PubMed Central

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  19. A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors.

    PubMed

    Zhang, Zhenyu; Wang, Bo; Zhou, Ping; Guo, Dongming; Kang, Renke; Zhang, Bi

    2016-01-01

    A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness Ra, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te(4+)3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions. PMID:26926622

  20. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  1. Center for thin film studies

    NASA Astrophysics Data System (ADS)

    Shannon, Robert P.; Gibson, Ursula J.

    1987-11-01

    This report covers the first year of operation of the URI Thin Film Center (TFC), and describes a diverse array of studies on thin-film materials, substrates, and their processing and analysis. Individual efforts are highlighted in sections on nucleation studies, ion-assisted deposition, Rutherford backscattering spectrometry, Brillouin scattering, a continuum theory of the evolution of structure in thin films, a study of polishing parameters relevant to the preparation of substrates, and the setup of a characterization facility for the Center.

  2. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  3. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  4. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  5. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  6. Analytical and numerical modeling of surface morphologies in thin films

    SciTech Connect

    Genin, F.Y.

    1995-05-01

    Experimental studies have show that strains due to thermal expansion mismatch between a film and its substrate can produce very large stresses in the film that can lead to the formation of holes and hillocks. Based on a phenomenological description of the evolution of a solid surface under both capillary and stress driving forces and for surface and grain boundary self-diffusion, this article provides analytical and numerical solutions for surface profiles of model geometries in polycrystalline thin films. Results can explain a variety of surface morphologies commonly observed experimentally and are discussed to give some practical insights on how to control the growth of holes and hillocks in thin films.

  7. Formation and ferromagnetic properties of FeSi thin films

    SciTech Connect

    Shin, Yooleemi; Anh Tuan, Duong; Hwang, Younghun; Viet Cuong, Tran; Cho, Sunglae

    2013-05-07

    In this work, the growth and ferromagnetic properties of {epsilon}-FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 Degree-Sign C results in polycrystalline {epsilon}-FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in {epsilon}-FeSi thin films was observed. The saturated magnetization and coercive field of {epsilon}-FeSi film are 4.6 emu/cm{sup 3} and 29 Oe at 300 K, respectively.

  8. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  9. Polysilicon thin films and interfaces

    SciTech Connect

    Kamins, T. ); Raicu, B. ); Thompson, C.V. )

    1990-01-01

    This volume contains the proceedings of a symposium on polysilicon thin films and interfaces, held as part of the 1990 Materials Research Society Spring Meeting. Topics covered include: crystal grown fo silicon and germanium wafers for photovoltaic devices, microanalysis of tungsten silicide interface, thermal processing of polysilicon thin films, and electrical and optical properties of polysilicon sheets for photovoltaic devices.

  10. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  11. Thin-film transistors based on p-type Cu{sub 2}O thin films produced at room temperature

    SciTech Connect

    Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Goncalves, Goncalo; Martins, Rodrigo; Park, Sang-Hee Ko; Hwang, Chi-Sun

    2010-05-10

    Copper oxide (Cu{sub 2}O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu{sub 2}O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm{sup 2}/V s and an on/off ratio of 2x10{sup 2}.

  12. High piezoelectricity of Pb(Zr,Ti)O{sub 3}-based ternary compound thin films on silicon substrates

    SciTech Connect

    Zhang Tao; Zhang Shuyi; Chen Zhaojiang; Zhou Fengmei; Zhang Zhongning; Yang Yuetao; Wasa, Kiyotaka

    2009-03-23

    Pb(Zr,Ti)O{sub 3} (PZT)-based ternary compound thin films, 0.06PMnN-0.94PZT(50/50) (PMnN-PZT), are deposited on Si-based heterostructures by rf magnetron sputtering system. The intrinsic PZT(50/50) thin films are also deposited on the same kind of substrates for comparison. The PMnN-PZT thin films show the similar polycrystalline structures as those of PZT with highly (111) oriented perovskite phase. The PMnN-PZT thin films show excellent piezoelectricity and ferroelectricity which are distinctly better than those of PZT thin films prepared with the same deposition conditions. Besides, the cantilevers of PMnN-PZT thin films on the heterostructure substrates also exhibit higher sensitivities than the PZT thin film cantilevers.

  13. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  14. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  15. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  16. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  17. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  18. Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

    SciTech Connect

    Gopal, Vishnu E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida E-mail: wdhu@mail.sitp.ac.cn

    2014-11-14

    The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

  19. Characterization of CdS thin film in high efficient CdS/CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-06-01

    Cadmium sulfide (CdS) thin film is the most commonly used window material for high-efficient cadmium telluride (CdTe) thin-film photovoltaic devices. High-efficient CdS/CdTe solar cells have been developed using ultra-thin CdS films having a thickness of below 0.1 μm. CdS film is deposited on transparent conductive oxide (TCO) film coated glass substrates by the metal organic chemical vapor deposition (MOCVD) technique, CdTe film is subsequently deposited by the close-spaced sublimation (CSS) technique. Finally, carbon and Ag-In electrodes are fabricated by the screen printing and sintering method. Cell performance depends primarily on the electrical and optical properties of CdS film, and hence we started to develop higher quality CdS film and found out clear differences between high- and low-quality CdS films from various analyses: SEM, AFM, SIMS, TDS and FT-IR. As a result of controlling qualities of CdS films, photovoltaic conversion efficiency of 10.5% has been achieved for a size of 1376 cm 2 of the solar module under air mass (AM) 1.5 conditions by the Japan Quality Assurance Organization (JQA).

  20. Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

    PubMed Central

    Gutiérrez-Lazos, Claudio Davet; Ortega-López, Mauricio; Pérez-Guzmán, Manuel A; Espinoza-Rivas, A Mauricio; Solís-Pomar, Francisco; Ortega-Amaya, Rebeca; Silva-Vidaurri, L Gerardo; Castro-Peña, Virginia C

    2014-01-01

    Summary This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC) synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size). Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent). The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2. PMID:24991525

  1. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications

    SciTech Connect

    Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-15

    Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  2. Single Source Precursors for Thin Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

    2002-01-01

    The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

  3. A versatile platform for magnetostriction measurements in thin films

    NASA Astrophysics Data System (ADS)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  4. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  5. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  6. Fabrication of stable, large-area thin-film CdTe photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Zhou, T. X.

    1995-06-01

    During the period of this subcontract, May 1991 through February 1995, Solar Cells, Inc. has developed and demonstrated a low-cost process to fabricate stable large-area cadmium telluride based thin-film photovoltaic modules. This report summarizes the final phase of the project which is concentrated on process optimization and product life tests. One of the major post-deposition process steps, the CdCl2 heat treatment, has been experimentally replaced with alternative treatments with vapor chloride or chlorine gas. Material and device qualities associated with alternative treatments are comparable or superior to those with the conventional treatment. Extensive experiments have been conducted to optimize the back-electrode structure in order to ensure long term device stability. Numerous small-area cells and minimodules have been subjected to a variety of stress tests, including but not limited to continuous light soak under open or short circuit or with resistive load, for over 10,000 hours. Satisfactory stability has been demonstrated on 48 and 64 sq cm minimodules under accelerated tests and on 7200 sq cm large modules under normal operating conditions. The conversion efficiency has also been significantly improved during this period. The total area efficiency of 7200 sq cm module has reached 8.4%, corresponding to a 60.3 W normalized output; the efficiency of 64 sq cm minimodules and 1.1 sq cm cells has reached 10.5% (aperture area) and 12.4% (total area), respectively.

  7. Thin-film photovoltaic power generation offers decreasing greenhouse gas emissions and increasing environmental co-benefits in the long term.

    PubMed

    Bergesen, Joseph D; Heath, Garvin A; Gibon, Thomas; Suh, Sangwon

    2014-08-19

    Thin-film photovoltaic (PV) technologies have improved significantly recently, and similar improvements are projected into the future, warranting reevaluation of the environmental implications of PV to update and inform policy decisions. By conducting a hybrid life cycle assessment using the most recent manufacturing data and technology roadmaps, we compare present and projected environmental, human health, and natural resource implications of electricity generated from two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in the United States (U.S.) to those of the current U.S. electricity mix. We evaluate how the impacts of thin films can be reduced by likely cost-reducing technological changes: (1) module efficiency increases, (2) module dematerialization, (3) changes in upstream energy and materials production, and (4) end-of-life recycling of balance of system (BOS). Results show comparable environmental and resource impacts for CdTe and CIGS. Compared to the U.S. electricity mix in 2010, both perform at least 90% better in 7 of 12 and at least 50% better in 3 of 12 impact categories, with comparable land use, and increased metal depletion unless BOS recycling is ensured. Technological changes, particularly efficiency increases, contribute to 35-80% reductions in all impacts by 2030. PMID:24984196

  8. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  9. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  10. Growth of ZnO:Al thin films onto different substrates

    SciTech Connect

    Prepelita, Petronela; Medianu, R.; Garoi, F.; Moldovan, A.

    2010-11-01

    In this paper we present some results regarding undoped and doped ZnO thin films deposited on various substrates like glass, silicon and kapton by rf magnetron sputtering. The influence of the amount of aluminum as well as the usage of different substrates on the final photovoltaic properties of the thin films is studied. For this, structural-morphological and optical investigations on the thin films are conducted. It was found that three important factors must be taken into account for adjusting the final desired application intended for the deposited thin films. These factors are: deposition conditions, the nature of both the dopant material and the substrate. A comparison study between undoped and doped case is also realized. Smooth Al doped ZnO thin films with a polycrystalline structure and a lower roughness than undoped ZnO are obtained.

  11. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm–1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  12. Thin-film microextraction.

    PubMed

    Bruheim, Inge; Liu, Xiaochuan; Pawliszyn, Janusz

    2003-02-15

    The properties of a thin sheet of poly(dimethylsiloxane) (PDMS) membrane as an extraction phase were examined and compared to solid-phase microextraction (SPME) PDMS-coated fiber for application to semivolatile analytes in direct and headspace modes. This new PDMS extraction approach showed much higher extraction rates because of the larger surface area to extraction-phase volume ratio of the thin film. Unlike the coated rod formats of SPME using thick coatings, the high extraction rate of the membrane SPME technique allows larger amounts of analytes to be extracted within a short period of time. Therefore, higher extraction efficiency and sensitivity can be achieved without sacrificing analysis time. In direct membrane SPME extraction, a linear relationship was found between the initial rate of extraction and the surface area of the extraction phase. However, for headspace extraction, the rates were somewhat lower because of the resistance to analyte transport at the sample matrix/headspace barrier. It was found that the effect of this barrier could be reduced by increasing either agitation, temperature, or surface area of the sample matrix/headspace interface. A method for the determination of PAHs in spiked lake water samples was developed based on the membrane PDMS extraction coupled with GC/MS. A linearity of 0.9960 and detection limits in the low-ppt level were found. The reproducibility was found to vary from 2.8% to 10.7%. PMID:12622398

  13. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra. PMID:26900756

  14. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  15. Effects of duty cycle on properties of CIGS thin films fabricated by pulse-reverse electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Jadhav, Harsharaj S.; Kalubarme, Ramchandra S.; Ahn, SeJin; Yun, Jae Ho; Park, Chan-Jin

    2013-03-01

    DC and pulse-reverse electrodeposition mode were employed for the deposition of polycrystalline Cu(In,Ga)Se2 thin films. In comparison with DC electrodeposition mode, films obtained by pulse-reverse electrodeposition were smoother, denser and more uniform with good adhesion. The Ga content in final composition of CIGS thin film was improved in pulse-reverse electrodeposition mode. In addition, pulse-reverse electrodeposited CIGS thin films were more crystalline with chalcopyrite structure. The compact morphology without pores in the deposit was achieved in the pulse-reverse electrodeposited CIGS thin films by varying duty cycle.

  16. Size and temperature dependence of the photoluminescence properties of NIR emitting ternary alloyed mercury cadmium telluride quantum dots

    NASA Astrophysics Data System (ADS)

    Jagtap, Amardeep M.; Chatterjee, Abhijit; Banerjee, Arup; Babu Pendyala, Naresh; Koteswara Rao, K. S. R.

    2016-04-01

    Exciton-phonon coupling and nonradiative relaxation processes have been investigated in near-infrared (NIR) emitting ternary alloyed mercury cadmium telluride (CdHgTe) quantum dots. Organically capped CdHgTe nanocrystals of sizes varying from 2.5-4.2 nm have been synthesized where emission is in the NIR region of 650-855 nm. Temperature-dependent (15-300 K) photoluminescence (PL) and the decay dynamics of PL at 300 K have been studied to understand the photophysical properties. The PL decay kinetics shows the transition from triexponential to biexponential on increasing the size of the quantom dots (QDs), informing the change in the distribution of the emitting states. The energy gap is found to be following the Varshni relation with a temperature coefficient of 2.1-2.8  ×  10-4 eV K-1. The strength of the electron-phonon coupling, which is reflected in the Huang and Rhys factor S, is found in the range of 1.17-1.68 for QDs with a size of 2.5-4.2 nm. The integrated PL intensity is nearly constant until 50 K, and slowly decreases up to 140 K, beyond which it decreases at a faster rate. The mechanism for PL quenching with temperature is attributed to the presence of nonradiative relaxation channels, where the excited carriers are thermally stimulated to the surface defect/trap states. At temperatures of different region (<140 K and 140-300 K), traps of low (13-25 meV) and high (65-140 meV) activation energies seem to be controlling the quenching of the PL emission. The broadening of emission linewidth is found to due to exciton-acoustic phonon scattering and exciton-longitudinal optical (LO) phonon coupling. The exciton-acoustic phonon scattering coefficient is found to be enhanced up to 55 μeV K-1 due to a stronger confinement effect. These findings give insight into understanding the photophysical properties of CdHgTe QDs and pave the way for their possible applications in the fields of NIR photodetectors and other optoelectronic devices.

  17. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  18. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  19. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    NASA Astrophysics Data System (ADS)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  20. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H{sub 2}/Ar at 400 °C, the as-grown α−Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  1. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  2. InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  3. InSb thin films grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Rajaram, P.

    2014-04-01

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl3 and 0.03M SbCl3, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm-1 corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  4. Characterization of the mechanical properties of freestanding platinum thin films

    NASA Astrophysics Data System (ADS)

    Abbas, Khawar

    an optical microscope. Digital image correlation was used to obtain similar accuracy (˜10 nm) for displacement measurements in both an SEM and under an optical microscope. The mechanical behavior of nanocrystalline thin film structure has been the subject of extensive research in recent years. Mainly, the focus has been on the effects of the film thickness with only a few researchers mentioning anything about the grain sizes of their polycrystalline films. The effect of thin film cross sectional morphology on the mechanical behavior of a thin film structure has never been studied directly. Presented in this dissertation is experimental evidence that these thin film structures are composite structures of various grain morphologies and the overall mechanical behavior exhibited by them is the combined effect of individual contributions of each of these grain morphologies.

  5. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  6. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  7. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  8. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  9. Electrical and optical properties of m-terphenyl thin films

    NASA Astrophysics Data System (ADS)

    Tkaczyk, S. W.

    2001-04-01

    In this work the results of m-terphenyl polycrystalline thin films investigations are presented. The main purpose of the investigations was to determine the mechanism of DC conductivity in the disordered m-terphenyl polycrystalline structures. The measurements were carried out for the thin films of m-terphenyl of the thickness varied from 2 to 13 micrometers with the presence of an external electrical field, which strength varied from 0 to 106 V/cm. Applied temperature range was 15-325K. The investigated m-terphenyl thin films were supplied with either the gold and Aluminum or the gold and carbon electrodes. The determined values of activation energy were found to be in the range of kT to 0.2 eV. The study let us determine the influence of an external electric field on the height of the potential barriers between the trapped charge carriers. The results obtained as well as their analysis drive to a conclusion that an injection of an electric charge from the electrodes into the investigated material's bulk takes place through the thermoemission and field emission processes.

  10. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  11. Calorimetry of epitaxial thin films.

    PubMed

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  12. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  13. Hybrid thin-film amplifier

    NASA Technical Reports Server (NTRS)

    Cleveland, G.

    1977-01-01

    Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

  14. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  15. Polyimide thin-film dielectrics on ferroelectrics

    NASA Technical Reports Server (NTRS)

    Galiardi, R. V.

    1977-01-01

    Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.

  16. Growth, characterisation and modelling of novel magnetic thin films for engineering applications

    NASA Astrophysics Data System (ADS)

    Raghunathan, Arun

    Magnetic materials, especially thin films, are being exploited today in many engineering applications such as magnetic recording heads and media, magnetic sensors and actuators and even magnetic refrigeration due to their smaller form factor or to thin film effects that do not occur in bulk material. Hence there is a need for optimised growth of thin films to suit the requirements of applications. The aim of this research work is two-fold: 1. Growth and characterisation of optimised magnetic thin films using pulsed-laser deposition and 2. Extension of Jiles-Atherton (JA) theory of hysteresis. A series of magnetoelastic thin films based on cobalt ferrite were deposited on SiO2/Si(100) substrates using pulsed-laser deposition at different substrate temperatures and different reactive oxygen pressures. The crystal structure, composition, magnetic properties, microstructure and magnetic domains of cobalt ferrite thin films were investigated. The optimised growth conditions of poly crystalline spinel cobalt ferrite thin films were determined from characterisation results. The Curie point of the optimised cobalt ferrite thin film was determined from moment vs. temperature measurement. The optimised thin film was magnetically annealed in order to induce an in-plane uniaxial anisotropy. The magnetostriction of the optimised sample was determined in the vibrating sample magnetometer using the inverse measurement technique. A special 3-point bender was designed and built for this purpose. The first successful thin film of Gd5Si2Ge2, a magnetocaloric rare earth intermetallic alloy, was deposited on a polycrystalline AlN substrate. The crystal structure, composition and magnetic phase transformation of Gd5Si2Ge2 thin film were investigated. The preliminary results are furnished in this thesis. The JA model of hysteresis was extended to incorporate thermal dependence of magnetic hysteresis. The extended model was validated against measurements made on substituted cobalt ferrite

  17. Synthesis and characterization of ZnO thin films

    NASA Astrophysics Data System (ADS)

    Anilkumar T., S.; Girija M., L.; Venkatesh, J.

    2016-05-01

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  18. Chemosynthesis of PbS thin film by SILAR technique

    NASA Astrophysics Data System (ADS)

    Pawar, Sarita B.; Pawar, S. A.; Patil, P. S.; Bhosale, P. N.

    2013-06-01

    Thin film of lead sulphide (PbS) having uniform circular grains was chemically synthesized at room temperature from an aqueous alkaline bath onto soda lime glass substrate. The synthesized film of PbS was characterized using X-ray diffraction, UV-vis spectroscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy and Transmission electron microscopy. The XRD pattern revealed the formation of PbS with a cubic crystal structure. SEM micrographs show that the granular morphology. EDS pattern shows presence of Pb and S with 1:1 stoichiometry. From TEM analysis grain size of PbS nanoparticles was found to be 40 nm and SAED pattern shows that polycrystalline nature of PbS thin film.

  19. Growth and physical properties of molecular organic thin films

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.

    2004-04-01

    Highly-oriented polycrystalline thin films of molecular organic materials consisting of small molecules can be easily obtained by physical and chemical vapour deposition methods. The crystallographic phase, orientation and morphology of the films critically depend on the interface and on the kinetics of growth and can be controlled, to a certain extent, by a judicious selection of the substrates and of the growth parameters. This article shortly explores the formation of organic-inorganic heterostructures as a function of coverage: from the most fundamental case, a single molecule on a surface, to thick films (thickness ˜ 1 μ m). The case of high-quality thick TTF-TCNQ films exemplifies the fact that the derived physical properties are essentially identical to those obtained from single crystals. Key words. Molecular organic materials thin films interfaces.

  20. Nanomechanical behavior of (1 0 0) oriented titanium thin films

    NASA Astrophysics Data System (ADS)

    Vasu, Kuraganti; Ghanashyam Krishna, Mamidipudi; Padmanabhan, Kuppuswamy Anantha

    2014-03-01

    Titanium thin films were deposited on single crystal Si (3 1 1) and polycrystalline 316 LN nuclear grade stainless steel substrates by RF magnetron sputtering. X-ray diffraction revealed that, irrespective of substrate type, films exhibit preferential growth along the (1 0 0) plane. The microstructure of the films corresponds to the zone-I type in structure zone model on both substrates. The hardness and Young's modulus of the films were extracted from load-displacement curves. The maximum values of hardness and Young's modulus were 12 and 132 GPa respectively for 220 nm thin film on SS substrate. The electrical resistivity data revealed that the films are metallic in nature and the resistivity is lower in the case of the 220 nm thickness film, on both substrates. The observed changes in mechanical and electrical properties can be correlated with variations in the microstructure of Ti films.

  1. Method for formation of thin film transistors on plastic substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  2. Method for formation of thin film transistors on plastic substrates

    DOEpatents

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  3. Characterization of graphene grown on bulk and thin film nickel.

    PubMed

    Lu, Chun-Chieh; Jin, Chuanhong; Lin, Yung-Chang; Huang, Chi-Ruei; Suenaga, Kazu; Chiu, Po-Wen

    2011-11-15

    We report on graphene films grown by atmospheric pressure chemical vapor deposition on bulk and thin film nickel. Carbon precipitation on the polycrystalline grains is controlled by the methane concentration and substrate cooling rate. It is found that graphene grows over multiple grains, with edges terminating along the grain boundaries and with dimensions directly correlated to the size of the underlying grains. This greatly restricts the resulting graphene size (<10 μm) in the thin film growth, whereas monolayer graphene with linear dimensions of hundreds of micrometers takes up the great majority of the surface overlayers on the bulk nickel (>50%). In addition, the number of layers can be better controlled in the bulk growth. Characterizations of the graphene sheets using transmission electron microscopy, Raman spectroscopy, and transport measurements in the field-effect configuration are also discussed. PMID:21967558

  4. Highly (111)-oriented multiferroic BiFeO3 thin film on a glass substrate

    NASA Astrophysics Data System (ADS)

    Maeng, W. J.; Son, J. Y.

    2013-03-01

    BiFeO3 (BFO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To grow highly (111)-oriented and good adhesive Pt bottom electrodes, Ta adhesion layers were used between Pt bottom electrodes and glass substrates. On the highly (111)-oriented Pt bottom electrodes, highly (111)-oriented polycrystalline BFO thin films were obtained as confirmed by X-ray diffraction experiments. The BFO thin film exhibited a high ferroelectric polarization (2Pr≈56 μC/cm2). The highly (111)-oriented BFO thin film also showed a ferromagnetic hysteresis loop and a ferroelectric domain size of approximately 30-40 nm, which is equivalent to 0.25 Tbit/in2.

  5. Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Jin, Michael H.; Lau, Janice E.; Harris, Jerry D.; Cowen, Jonathan E.; Duraj, Stan A.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

  6. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  7. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-04-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  8. Accessing the quantum palette: quantum-dot spectral conversion towards the BIPV application of thin-film micro-modules

    NASA Astrophysics Data System (ADS)

    Hodgson, S. D.; Kartopu, G.; Rugen-Hankey, S. L.; Clayton, A. J.; Barrioz, V.; Irvine, S. J. C.

    2015-10-01

    To demonstrate the potential for building integrated photovoltaics (BIPV) incorporation of thin-film photovoltaics, commercially available quantum dots (QDs) have been deposited, as part of a poly(methyl methacrylate) (PMMA) composite film, on a cadmium telluride (CdTe) micro-module. This resulted in an increase in photocurrent generation through the luminescent down-shifting (LDS) process. The optical properties of these films were characterized through UV-vis spectroscopy. The impact of the film on the micro-module was studied through current-voltage (I-V) and external quantum efficiency measurements. Further layers were added to the initial single-layer LDS film, however no additional improvement to the micro-module were observed. Additionally, a range of emission wavelengths have been explored. The majority of these films, when tested on a CdTe device, were shown to improve the photocurrent generation whilst also visually displaying the vivid colour palette provided by quantum confined materials. The future feasibility of using QD based LDS films for large scale BIPV-based power generation has also been discussed.

  9. Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993

    SciTech Connect

    Gray, J.L.; Schwartz, R.J.; Lee, Y.J.

    1994-03-01

    Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

  10. Magnetoelastic properties of cobalt-nickel thin films

    NASA Astrophysics Data System (ADS)

    Anapolsky, Abraham

    Cobalt-nickel alloys show large values of magnetostriction, magnetocrystalline anisotropy, and a martensitic phase transformation at temperatures around 0 K. Collectively, these properties make Co-Ni alloys good candidates for the so-called giant magnetostrictive effect. Magnetostrictive (and giant magnetostrictive) alloys can be used to replace complex machinery (such as actuators) in micro-electromechanical systems (MEMS). For this reason, researchers have been investigating the magnetostrictive properties of thin films. I grew and characterized films in the composition range Co: 10 wt% Ni to Co: 35 wt% Ni. Films were grown by electron beam evaporation and a variety of techniques including SEM, TEM, x-ray diffraction, and SQUID magnetometry were used to characterize the films. A thorough background in elastic and non-elastic mechanisms of deformation (in relation to magnetostriction) is discussed. These topics include a semi-classical treatment of magnetoelasticity, superelasticity, and martensitic transformations. An important result of this thesis is the complete magnetic and physical characterization for the entire range of Co-Ni thin films that undergo martensitic transformation. Extensive analysis of morphology, microstructure, phase, and magnetic data, developed a consistent picture of Co-Ni polycrystalline thin films in the composition range mentioned above. Another important result was the development of a novel technique for measuring the value of the magnetostriction coefficient in thin films. The in-plane component of magnetostriction ( lips ) is determined by fitting a theoretical model (based on the Stoner-Wohlforth theory for uniaxial systems) to magnetization vs temperature (M vs T) data for cobalt-nickel thin films. My theoretical model predicts the effect of an imposed stress (or strain) on the in-plane component of saturation magnetization ( Mips ). The imposed stress (or strain) is due to a mismatch in the coefficient of thermal expansion

  11. Phase Coarsening in Thin Films

    NASA Astrophysics Data System (ADS)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  12. Thin film concentrator panel development

    NASA Astrophysics Data System (ADS)

    Zimmerman, D. K.

    1982-07-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  13. Effect of Substrate Temperature on The Structural and Optical Properties of Non-doped ZnO Thin Films

    SciTech Connect

    Ilican, Saliha; Caglar, Mujdat; Caglar, Yasemin

    2007-04-23

    Transparent conducting non-doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at different substrate temperatures. X-ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. From these spectra, grain size and texture coefficient (TC) are calculated. The analytical method for calculating lattice constants is used to calculate a and c for the films. The preferred orientation of non-doped ZnO thin films was changed with substrate temperature. The average optical transmittance of non-doped ZnO thin films was over 80% in the visible range. The optical band gap and optical constants of the non-doped ZnO thin films were evaluated as dependent on the substrate temperatures. The substrate temperature have a significant effect on structural and optical properties of the non-doped ZnO thin films.

  14. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  15. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis. PMID:18980236

  16. Review of thin film solar cell technology and applications for ultra-light spacecraft solar arrays

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.

    1991-01-01

    Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).

  17. Thin Films of Molecular Metals TTF-TCNQ

    NASA Astrophysics Data System (ADS)

    Fraxedas, J.; Molas, S.; Figueras, A.; Jiménez, I.; Gago, R.; Auban-Senzier, P.; Goffman, M.

    2002-11-01

    We present recent results on the characterization of highly ordered polycrystalline thin films of the charge transfer salt TTF-TCNQ (TTF=tetrathiafulvalene, TCNQ=tetracyanoquinodimethane) prepared by thermal sublimation in high vacuum under different conditions. The increase in orientation and microcrystal size as a function of substrate and annealing temperatures is addressed. A consequence of such an increase is the reduction of the conductivity activation energy, which eventually leads to the observation of the Peierls transition by resistivity measurements. X-ray absorption near edge spectroscopy studies performed with synchrotron radiation reveal directly the influence of charge transfer on unoccupied states near the Fermi level.

  18. Growth and Characterization of Bismuth and Antimony Thin Films

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Berrios, A. R.; Collazo, R.; Garcia, J. L.; Ducoudray, G. O.

    1996-03-01

    We have grown thin films of bismuth and antimony using hot wall epitaxy. The polycrystalline films were grown onto (111)-silicon substrates. The chemical integrity of the films was established using Auger electron spectroscopy. The crystallographical properties of the films were assessed using x-ray diffraction techniques. We will report on the results of these characterization efforts, as well as, on the growth apparatus and process. Work supported in part by NSWC-CRADA 93-01 and EPSCoR-NSF Grant EHR-9108775

  19. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  20. Dynamic X-ray direct conversion detector using a CdTe polycrystalline layer coupled to a CMOS readout chip

    NASA Astrophysics Data System (ADS)

    Arques, Marc; Renet, Sébastien; Brambilla, Andréa; Feuillet, Guy; Gasse, Adrien; Billon-Pierron, Nicolas; Jolliot, Muriel; Mathieu, Lydie; Rohr, Pierre

    2011-05-01

    A direct detection X-ray imager is presented. It uses polycrystalline cadmium telluride (CdTe) grown by close space sublimation technique for the X-ray photoconductor. A 15 mm×15 mm CdTe layer is connected to a 200×200 pixel readout CMOS by indium bumping. X-ray performance at 16 frames/s rate is measured. In particular a readout noise of 0.5 X-ray, an MTF of 50% at 4 lp/mm and a DQE of 20% at 4 lp/mm are obtained.

  1. Bauschinger effect in unpassivated freestanding thin films

    NASA Astrophysics Data System (ADS)

    Shishvan, Siamak Soleymani; Nicola, Lucia; Van der Giessen, Erik

    2010-05-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to residual stress upon unloading. This inhomogeneity can be caused by dislocation pile-ups, variations in texture, grain orientations, and grain size. To study the BE, columnar-grained films as well as films with multiple grains across the thickness are considered. The film is modeled in a 2D framework by a unit cell consisting of an array of grains with different orientation. In order to capture the interaction among grains, we motivate and explore the use of an affine deformation assumption on the grain level to mimic the three-dimensional geometry in this framework. It is shown that the dispersion of grain size in a film together with the size-dependence of yield strength leads to significant BEs in bare films. Quantitative comparison of simulations with experimental data is provided.

  2. YSZ thin films with minimized grain boundary resistivity.

    PubMed

    Mills, Edmund M; Kleine-Boymann, Matthias; Janek, Juergen; Yang, Hao; Browning, Nigel D; Takamura, Yayoi; Kim, Sangtae

    2016-04-21

    In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e.g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here we report that the ionic conductivity of yttria stabilized zirconia thin films with nano-columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500 °C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film-substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg(2+) diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary "design" as an attractive method to obtain highly conductive solid electrolyte thin films. PMID:27030391

  3. Changes in the Young Modulus of hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Vargas, André Luís Marin; de Araújo Ribeiro, Fabiana; Hübler, Roberto

    2015-12-01

    Hafnium-oxide (HfO2)-based materials have been extensively researched due to their excellent optical and electrical properties. However, the literature data on the mechanical properties of these materials and its preparation for heavy machinery application is very limited. The aim of this work is to deposit hafnium oxide thin films by DC reactive magnetron sputtering with different Young's Modulus from the Ar/O2 concentration variation in the deposition chamber. The thin films were deposited by DC reactive magnetron sputtering with different Ar/O2 gas concentrations in plasma. After deposition, HfOx thin films were characterized through XRD, AFM, RBS and XRF. In this regard, it was observed that the as-deposited HfO2 films were mostly amorphous in the lower Ar/O2 gas ratio and transformed to polycrystalline with monoclinic structure as the Ar/O2 gas ratios grows. RBS technique shows good compromise between the experimental data and the simulated ones. It was possible to tailored the Young Modulus of the films by alter the Ar/O2 content on the deposition chamber without thermal treatment.

  4. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

    PubMed

    Acharya, Susant K; Nallagatla, Raveendra Venkata; Togibasa, Octolia; Lee, Bo W; Liu, Chunli; Jung, Chang U; Park, Bae Ho; Park, Ji-Yong; Cho, Yunae; Kim, Dong-Wook; Jo, Janghyun; Kwon, Deok-Hwang; Kim, Miyoung; Hwang, Cheol Seong; Chae, Seung C

    2016-03-01

    Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters. PMID:26955744

  5. Liquid crystals for organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  6. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future. PMID:24840493

  7. Birefringence enhancement in annealed TiO2 thin films

    NASA Astrophysics Data System (ADS)

    van Popta, Andy C.; Cheng, June; Sit, Jeremy C.; Brett, Michael J.

    2007-07-01

    Postdeposition thermal annealing is used to enhance the form birefringence of nanostructured TiO2 thin films grown by electron-beam evaporation using the serial bideposition technique. Thin films were grown on fused silica substrates using oblique deposition angles between 60° and 75° and repetitive 180° substrate rotations to produce birefringent thin films that are structurally anisotropic. Postdeposition annealing in air, between 200 and 900°C, was used to increase the form birefringence of the films by changing the TiO2 phase from the as-deposited amorphous state to a polycrystalline state that exhibits a greater inherent density and larger bulk refractive index. The optical properties, microstructure, and crystallinity were characterized by Mueller matrix ellipsometry, scanning electron microscopy, atomic force microscopy, and x-ray diffraction. It was found that the in-plane birefringence increased significantly upon thermal annealing, in some cases yielding birefringence values that doubled in magnitude, from 0.11 to 0.22 at a wavelength of 550nm for films annealed at 400°C.

  8. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    SciTech Connect

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.

  9. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE PAGESBeta

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore » quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  10. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  11. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  12. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  13. Zeolite thin films: from computer chips to space stations.

    PubMed

    Lew, Christopher M; Cai, Rui; Yan, Yushan

    2010-02-16

    more recent work on polycrystalline zeolite thin films as promising biocompatible coatings and environmentally benign wear-resistant and antifouling coatings. When zeolites are incorporated into polymer thin films in the form of nanocrystals, we also show that the resultant composite membranes can significantly improve the performance of reverse osmosis membranes for sea water desalination and proton exchange membrane fuel cells. These diverse applications of zeolites have the potential to initiate new industries while revolutionizing existing ones with a potential economic impact that could extend into the hundreds of billions of dollars. We have licensed several of these inventions to companies with millions of dollars invested in their commercial development. We expect that other related technologies will be licensed in the near future. PMID:20158246

  14. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  15. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  16. Thin film based plasmon nanorulers

    NASA Astrophysics Data System (ADS)

    Taylor, Alexander D.; Lu, Chang; Geyer, Scott; Carroll, D. L.

    2016-07-01

    In this work, isolated metal nanoparticles are supported on a dielectric thin film that is placed on a conducting plane. The optical scattering characteristics of these metal nanoparticles are directly correlated with the localized surface plasmon states of the nanoparticle—image particle dimer, formed in the conducting plane below. Quantification of plasmon resonance shifts can be directly correlated with the application of the plasmon nanoruler equation. This simple geometry shows that direct optical techniques can be used to resolve thickness variations in dielectrics of only a few nanometers.

  17. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    PubMed

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement. PMID:26836525

  18. The influence of reaction times on structural, optical and luminescence properties of cadmium telluride nanoparticles prepared by wet-chemical process

    NASA Astrophysics Data System (ADS)

    Kiprotich, Sharon; Dejene, Francis B.; Ungula, Jatani; Onani, Martin O.

    2016-01-01

    This paper explains one pot synthesis of type II water soluble L-cysteine capped cadmium telluride (CdTe) core shell quantum dots using cadmium acetate, potassium tellurite and L-cysteine as the starting materials. The reaction was carried out in a single three necked flask without nitrogen under reflux at 100 °C. Results from PL show a sharp absorption excitonic band edge of the CdTe core with respect to the core shell which loses its shoulder during the growth of the shell on the core. The PL spectra indicate a drastic shift in emission window of the core which is simultaneously accompanied by an increase in emission intensity. X-ray diffraction pattern confirms the formation of hexagonal phase for all samples. Some difference in absorption edges were observed due to varying synthesis time of CdTe NPs. The position of the absorption band is observed to shift towards the lower wavelength side for shorter durations of synthesis.

  19. Apoptosis Induction and Imaging of Cadmium-Telluride Quantum Dots with Wogonin in Multidrug-Resistant Leukemia K562/A02 Cell.

    PubMed

    Huang, Bin; Liu, Hongyi; Huang, Dongliang; Mao, Xuhua; Hu, Xianyun; Jiang, Caiyun; Pu, Maomao; Zhang, Gen; Zeng, Xin

    2016-03-01

    Wogonin (5,7-dihydroxy-8-methoxyflavone) is one of the active components of flavonoids isolated from Scutellariae radix and possesses antitumor effect against leukemia. Cadmium-telluride quantum dots (CdTe-QDs) are a kind of nanoparticles with great potential in functioning as an efficient drug delivery vector in biomedical research. In this study, we investigated the synergistic effect of CdTe-QDs with Wogonin on the induction of apoptosis using drug-resistant human leukemia KA cells. Flow cytometry analysis, assay of morphology under electron microscope, quantitative analysis of tumor volume and micro-CT imaging demonstrated that compared with that by pure CdTe-QDs or wogonin, the apoptosis rate increased sharply when treated wirh CdTe-QDs together with wogonin on KA cells. These results proved that the nanocomposites readily overcame the barrier of drug-resistance and provoked cell apoptosis in vitro and in vivo by facilitating the interaction between wogonin and KA cells. As known to all, it is an inevitable tendency that new effective therapies will take the place of conventional chemotherapy and radiotherapy presenting significant disadvantages. According to this article, CdTe-QD combined with wogonin is a possible alternative for some cancer treatments. PMID:27455661

  20. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

    NASA Technical Reports Server (NTRS)

    Patterson, James D.; Li, Wei-Gang

    1995-01-01

    The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.